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Title: Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

Abstract

Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibits the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.

Authors:
 [1];  [2];  [3];  [1];  [3];  [4];  [1]
+ Show Author Affiliations
  1. Purdue Univ., West Lafayette, IN (United States)
  2. Purdue Univ., West Lafayette, IN (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. of California, Santa Cruz, Santa Cruz, CA (United States)
  4. Purdue Univ., West Lafayette, IN (United States); Univ. of California, Santa Cruz, Santa Cruz, CA (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1193239
Report Number(s):
BNL-108170-2015-JA
Journal ID: ISSN 0884-2914; KC040302
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 30; Journal Issue: 5; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, and Sands, Timothy D. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates. United States: N. p., 2015. Web. doi:10.1557/jmr.2015.30.
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Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, & Sands, Timothy D. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates. United States. https://doi.org/10.1557/jmr.2015.30
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Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, and Sands, Timothy D. Sat . "Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates". United States. https://doi.org/10.1557/jmr.2015.30. https://www.osti.gov/servlets/purl/1193239.
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@article{osti_1193239,
title = {Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates},
author = {Burmistrova, Polina V. and Zakharov, Dmitri N. and Favaloro, Tela and Mohammed, Amr and Stach, Eric A. and Shakouri, Ali and Sands, Timothy D.},
abstractNote = {Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibits the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.},
doi = {10.1557/jmr.2015.30},
journal = {Journal of Materials Research},
number = 5,
volume = 30,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}
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https://doi.org/10.1557/jmr.2015.30
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Works referenced in this record:

The effect of oxygen incorporation in sputtered scandium nitride films
journal, October 2008

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)
journal, June 2009

  • Höglund, Carina; Bareño, Javier; Birch, Jens
  • Journal of Applied Physics, Vol. 105, Issue 11
  • DOI: 10.1063/1.3132862

Morphology of epitaxial TiN(001) grown by magnetron sputtering
journal, March 1997

  • Karr, Brian W.; Petrov, I.; Cahill, David G.
  • Applied Physics Letters, Vol. 70, Issue 13
  • DOI: 10.1063/1.118675

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
journal, May 2008

Microstructure of epitaxial scandium nitride films grown on silicon
journal, October 2006

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces
journal, November 2014

  • King, Sean W.; Davis, Robert F.; Nemanich, Robert J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 6
  • DOI: 10.1116/1.4894816

Epitaxial growth and properties of semiconducting ScN
journal, May 1972

Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations
journal, March 2001

ScGaN and ScAlN: emerging nitride materials
journal, January 2014

Structural, electronic and optical properties of (Sc,Y)N solid solutions
journal, January 2009

Atomic View of Surface Self‐Diffusion: Tungsten on Tungsten
journal, February 1966

  • Ehrlich, Gert; Hudda, F. G.
  • The Journal of Chemical Physics, Vol. 44, Issue 3
  • DOI: 10.1063/1.1726787

High mobility single crystalline ScN and single-orientation epitaxial YN on sapphire via magnetron sputtering
journal, January 2008

  • Gregoire, John M.; Kirby, Steven D.; Scopelianos, George E.
  • Journal of Applied Physics, Vol. 104, Issue 7
  • DOI: 10.1063/1.2996006

Bandgap in Al 1− x Sc x N
journal, March 2013

  • Deng, Ruopeng; Evans, Sarah R.; Gall, Daniel
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4795784

Thermoelectric Transport in a ZrN/ScN Superlattice
journal, January 2009

  • Zebarjadi, Mona; Bian, Zhixi; Singh, Rajeev
  • Journal of Electronic Materials, Vol. 38, Issue 7
  • DOI: 10.1007/s11664-008-0639-5

Anomalous Optical Absorption Limit in InSb
journal, February 1954

Dislocation reduction in gallium nitride films using scandium nitride interlayers
journal, October 2007

  • Moram, M. A.; Zhang, Y.; Kappers, M. J.
  • Applied Physics Letters, Vol. 91, Issue 15
  • DOI: 10.1063/1.2794009

Atom Movement and Binding on Surface Clusters: Pt on Pt(111) Clusters
journal, August 1996

Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices
journal, January 2009

  • Rawat, Vijay; Koh, Yee Kan; Cahill, David G.
  • Journal of Applied Physics, Vol. 105, Issue 2
  • DOI: 10.1063/1.3065092

Growth of TiN∕GaN metal/semiconductor multilayers by reactive pulsed laser deposition
journal, September 2006

  • Rawat, Vijay; Sands, Timothy
  • Journal of Applied Physics, Vol. 100, Issue 6
  • DOI: 10.1063/1.2337784

Adatom motion to lattice steps: A direct view
journal, January 1993

Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition
journal, November 1999

  • Gall, D.; Petrov, I.; Desjardins, P.
  • Journal of Applied Physics, Vol. 86, Issue 10
  • DOI: 10.1063/1.371555

Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates
journal, April 2013

  • Burmistrova, Polina V.; Maassen, Jesse; Favaloro, Tela
  • Journal of Applied Physics, Vol. 113, Issue 15
  • DOI: 10.1063/1.4801886

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)
journal, August 2014

  • King, Sean W.; Nemanich, Robert J.; Davis, Robert F.
  • Applied Physics Letters, Vol. 105, Issue 8
  • DOI: 10.1063/1.4894010

Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition
journal, July 1998

  • Gall, D.; Petrov, I.; Madsen, L. D.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 4
  • DOI: 10.1116/1.581360

Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers
journal, April 2010

  • Moram, M. A.; Kappers, M. J.; Humphreys, C. J.
  • physica status solidi (c), Vol. 7, Issue 7-8
  • DOI: 10.1002/pssc.200983494

Electronic structure, phonons, and thermal properties of ScN, ZrN, and HfN: A first-principles study
journal, February 2010

  • Saha, Bivas; Acharya, Jagaran; Sands, Timothy D.
  • Journal of Applied Physics, Vol. 107, Issue 3
  • DOI: 10.1063/1.3291117

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers
journal, April 2014

  • Oshima, Yuichi; Víllora, Encarnación G.; Shimamura, Kiyoshi
  • Journal of Applied Physics, Vol. 115, Issue 15
  • DOI: 10.1063/1.4871656

Evolution of surface roughness in epitaxial Si 0.7 Ge 0.3 (001) as a function of growth temperature (200–600 °C) and Si(001) substrate miscut
journal, August 1996

  • Lee, N. ‐E.; Cahill, David G.; Greene, J. E.
  • Journal of Applied Physics, Vol. 80, Issue 4
  • DOI: 10.1063/1.363113

Coarsening of Unstable Surface Features during Fe(001) Homoepitaxy
journal, December 1995

Anomalously high thermoelectric power factor in epitaxial ScN thin films
journal, December 2011

  • Kerdsongpanya, Sit; Van Nong, Ngo; Pryds, Nini
  • Applied Physics Letters, Vol. 99, Issue 23
  • DOI: 10.1063/1.3665945

Phase stability of ScN-based solid solutions for thermoelectric applications from first-principles calculations
journal, August 2013

  • Kerdsongpanya, Sit; Alling, Björn; Eklund, Per
  • Journal of Applied Physics, Vol. 114, Issue 7
  • DOI: 10.1063/1.4818415
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    Works referencing / citing this record:

    Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c 1 − x M g x N
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    Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds
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    Compensation of native donor doping in ScN: Carrier concentration control and p -type ScN
    journal, June 2017

    • Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.
    • Applied Physics Letters, Vol. 110, Issue 25
    • DOI: 10.1063/1.4989530

    Optical and electron transport properties of rock-salt Sc 1− x Al x N
    journal, July 2015

    • Deng, Ruopeng; Zheng, P. Y.; Gall, D.
    • Journal of Applied Physics, Vol. 118, Issue 1
    • DOI: 10.1063/1.4923429

    Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials
    journal, June 2018

    • Saha, Bivas; Shakouri, Ali; Sands, Timothy D.
    • Applied Physics Reviews, Vol. 5, Issue 2
    • DOI: 10.1063/1.5011972

    Development of semiconducting ScN
    journal, February 2019

    Microstructure and thermoelectric properties of CrN and CrN/Cr 2 N thin films
    journal, August 2018

    • Gharavi, M. A.; Kerdsongpanya, S.; Schmidt, S.
    • Journal of Physics D: Applied Physics, Vol. 51, Issue 35
    • DOI: 10.1088/1361-6463/aad2ef

    Effect of impurities on morphology, growth mode, and thermoelectric properties of (1 1 1) and (0 0 1) epitaxial-like ScN films
    journal, November 2018

    • le Febvrier, Arnaud; Tureson, Nina; Stilkerich, Nina
    • Journal of Physics D: Applied Physics, Vol. 52, Issue 3
    • DOI: 10.1088/1361-6463/aaeb1b

    Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds
    journal, November 2017

    Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds
    journal, September 2018

    • Al-Atabi, Hayder A.; Khan, Neelam; Nour, Edil
    • Applied Physics Letters, Vol. 113, Issue 12
    • DOI: 10.1063/1.5051457

    The Effect of Point Defects on the Electronic Density of States of ScMN2-Type (M = V, Nb, Ta) Phases
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