Graphene-silicon layered structures on single-crystalline Ir(111) thin films
Abstract
Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾
- Authors:
-
- Chinese Academy of Sciences (CAS), Beijing (China)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. Augsburg, Augsburg (Germany)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1193196
- Report Number(s):
- BNL-107859-2015-JA
Journal ID: ISSN 2196-7350; R&D Project: MA015MACA; KC0201010
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; graphene-silicon; layered structures; interaction; Ir(111); single-crystalline thin films
Citation Formats
Que, Yande D., Tao, Jing, Zhang, Yong, Wang, Yeliang L., Wu, Lijun J., Zhu, Yimei M., Kim, Kisslinger, Weinl, Michael, Schreck, Matthias, Shen, Chengmin M., Du, Shixuan X., Liu, Yunqi Q., Gao, H. -J., Huang, Li, and Xu, Wenyan Y. Graphene-silicon layered structures on single-crystalline Ir(111) thin films. United States: N. p., 2015.
Web. doi:10.1002/admi.201400543.
Que, Yande D., Tao, Jing, Zhang, Yong, Wang, Yeliang L., Wu, Lijun J., Zhu, Yimei M., Kim, Kisslinger, Weinl, Michael, Schreck, Matthias, Shen, Chengmin M., Du, Shixuan X., Liu, Yunqi Q., Gao, H. -J., Huang, Li, & Xu, Wenyan Y. Graphene-silicon layered structures on single-crystalline Ir(111) thin films. United States. https://doi.org/10.1002/admi.201400543
Que, Yande D., Tao, Jing, Zhang, Yong, Wang, Yeliang L., Wu, Lijun J., Zhu, Yimei M., Kim, Kisslinger, Weinl, Michael, Schreck, Matthias, Shen, Chengmin M., Du, Shixuan X., Liu, Yunqi Q., Gao, H. -J., Huang, Li, and Xu, Wenyan Y. Tue .
"Graphene-silicon layered structures on single-crystalline Ir(111) thin films". United States. https://doi.org/10.1002/admi.201400543. https://www.osti.gov/servlets/purl/1193196.
@article{osti_1193196,
title = {Graphene-silicon layered structures on single-crystalline Ir(111) thin films},
author = {Que, Yande D. and Tao, Jing and Zhang, Yong and Wang, Yeliang L. and Wu, Lijun J. and Zhu, Yimei M. and Kim, Kisslinger and Weinl, Michael and Schreck, Matthias and Shen, Chengmin M. and Du, Shixuan X. and Liu, Yunqi Q. and Gao, H. -J. and Huang, Li and Xu, Wenyan Y.},
abstractNote = {Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾},
doi = {10.1002/admi.201400543},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 2,
place = {United States},
year = {Tue Jan 20 00:00:00 EST 2015},
month = {Tue Jan 20 00:00:00 EST 2015}
}
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Works referencing / citing this record:
Observation of van Hove Singularities in Twisted Silicene Multilayers
journal, July 2016
- Li, Zhi; Zhuang, Jincheng; Chen, Lan
- ACS Central Science, Vol. 2, Issue 8