Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
Abstract
The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural and electrical characterization of SrZrxTi1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.
- Authors:
-
- Univ. of Texas, Arlington, TX (United States). Dept. of Physics and Dept. of Electrical Engineering
- Univ. of Texas, Arlington, TX (United States). Dept. of Physics and Deptt of Materials Science and Engineering
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials; Nanjing Univ. (China). National Lab. of Solid State Microstructures and Dept. of Materials Science and Engineering
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Div.
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab.
- Univ. of Texas, Arlington, TX (United States). Dept. of Physics
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1188248
- Report Number(s):
- BNL-108045-2015-JA
Journal ID: ISSN 2196-7350; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 29 ENERGY PLANNING, POLICY, AND ECONOMY; semiconductor; band-gap engineering; interface; complex oxides
Citation Formats
Jahangir-Moghadam, Mohammadreza, Ahmadi-Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., and Ngai, Joseph H. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface. United States: N. p., 2015.
Web. doi:10.1002/admi.201400497.
Jahangir-Moghadam, Mohammadreza, Ahmadi-Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., & Ngai, Joseph H. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface. United States. https://doi.org/10.1002/admi.201400497
Jahangir-Moghadam, Mohammadreza, Ahmadi-Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., and Ngai, Joseph H. Mon .
"Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface". United States. https://doi.org/10.1002/admi.201400497. https://www.osti.gov/servlets/purl/1188248.
@article{osti_1188248,
title = {Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface},
author = {Jahangir-Moghadam, Mohammadreza and Ahmadi-Majlan, Kamyar and Shen, Xuan and Droubay, Timothy and Bowden, Mark and Chrysler, Matthew and Su, Dong and Chambers, Scott A. and Ngai, Joseph H.},
abstractNote = {The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural and electrical characterization of SrZrxTi1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.},
doi = {10.1002/admi.201400497},
journal = {Advanced Materials Interfaces},
number = 4,
volume = 2,
place = {United States},
year = {Mon Feb 09 00:00:00 EST 2015},
month = {Mon Feb 09 00:00:00 EST 2015}
}
Web of Science
Works referenced in this record:
Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
journal, November 2008
- Mavrou, G.; Tsipas, P.; Sotiropoulos, A.
- Applied Physics Letters, Vol. 93, Issue 21
Spin-dependent tunneling conductance of sandwiches
journal, January 2001
- Butler, W. H.; Zhang, X. -G.; Schulthess, T. C.
- Physical Review B, Vol. 63, Issue 5
Epitaxial integration of perovskite-based multifunctional oxides on silicon
journal, May 2013
- Baek, Seung-Hyub; Eom, Chang-Beom
- Acta Materialia, Vol. 61, Issue 8
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
journal, September 2013
- Dubourdieu, Catherine; Bruley, John; Arruda, Thomas M.
- Nature Nanotechnology, Vol. 8, Issue 10
Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998
- McKee, R. A.; Walker, F. J.; Chisholm, M. F.
- Physical Review Letters, Vol. 81, Issue 14
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
journal, December 2013
- Oh, Il-kwon; Kim, Min-Kyu; Lee, Jae-seung
- Applied Surface Science, Vol. 287
Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions
journal, September 2000
- Chambers, S. A.; Liang, Y.; Yu, Z.
- Applied Physics Letters, Vol. 77, Issue 11
Crystalline Oxides on Silicon
journal, April 2010
- Reiner, James W.; Kolpak, Alexie M.; Segal, Yaron
- Advanced Materials, Vol. 22, Issue 26-27
Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates
journal, February 2011
- Merckling, C.; Saint-Girons, G.; Botella, C.
- Applied Physics Letters, Vol. 98, Issue 9
Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy
journal, March 2012
- Méchin, L.; Adamo, C.; Wu, S.
- physica status solidi (a), Vol. 209, Issue 6
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
journal, June 1980
- Kraut, E. A.; Grant, R. W.; Waldrop, J. R.
- Physical Review Letters, Vol. 44, Issue 24
Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches
journal, August 2011
- Lukanov, B. R.; Reiner, J. W.; Walker, F. J.
- Physical Review B, Vol. 84, Issue 7
Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces
journal, July 1987
- Waldrop, J. R.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 5, Issue 4
Electrical properties and interfacial structure of epitaxial LaAlO3 on Si (001)
journal, June 2009
- Reiner, J. W.; Posadas, A.; Wang, M.
- Journal of Applied Physics, Vol. 105, Issue 12
An Epitaxial Ferroelectric Tunnel Junction on Silicon
journal, September 2014
- Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin
- Advanced Materials, Vol. 26, Issue 42
Electrical characteristics of epitaxially grown SrTiO 3 on silicon for metal-insulator-semiconductor gate dielectric applications
journal, April 2003
- Sanghun Jeon, ; Walker, F. J.; Billman, C. A.
- IEEE Electron Device Letters, Vol. 24, Issue 4
Field effect transistors with SrTiO3 gate dielectric on Si
journal, March 2000
- Eisenbeiser, K.; Finder, J. M.; Yu, Z.
- Applied Physics Letters, Vol. 76, Issue 10
BaTiO 3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices
journal, October 2013
- Hudait, Mantu K.; Zhu, Yan; Jain, Nikhil
- ACS Applied Materials & Interfaces, Vol. 5, Issue 21
Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction
journal, February 2005
- Liang, Y.; Curless, J.; McCready, D.
- Applied Physics Letters, Vol. 86, Issue 8
Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
journal, January 1987
- Capasso, F.
- Science, Vol. 235, Issue 4785
Interface control of high-k gate dielectrics on Ge
journal, July 2008
- Caymax, M.; Houssa, M.; Pourtois, G.
- Applied Surface Science, Vol. 254, Issue 19
Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001
- McKee, R. A.
- Science, Vol. 293, Issue 5529
Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization
journal, July 2008
- Kita, Koji; Takahashi, Toshitake; Nomura, Hideyuki
- Applied Surface Science, Vol. 254, Issue 19
Magnetic and structural properties of BiFeO 3 thin films grown epitaxially on SrTiO 3 /Si substrates
journal, May 2013
- Laughlin, Ryan P.; Currie, Daniel A.; Contreras-Guererro, Rocio
- Journal of Applied Physics, Vol. 113, Issue 17
High-temperature phase transitions in
journal, February 1999
- Kennedy, Brendan J.; Howard, Christopher J.; Chakoumakos, Bryan C.
- Physical Review B, Vol. 59, Issue 6
Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001
- Chambers, S. A.; Liang, Y.; Yu, Z.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
journal, July 2009
- Wallace, Robert M.; McIntyre, Paul C.; Kim, Jiyoung
- MRS Bulletin, Vol. 34, Issue 7
c-axis oriented epitaxial BaTiO3 films on (001) Si
journal, July 2006
- Vaithyanathan, V.; Lettieri, J.; Tian, W.
- Journal of Applied Physics, Vol. 100, Issue 2
Hysteretic electrical transport in BaTiO 3 /Ba 1− x Sr x TiO 3 /Ge heterostructures
journal, February 2014
- Ngai, J. H.; Kumah, D. P.; Ahn, C. H.
- Applied Physics Letters, Vol. 104, Issue 6
Band offsets at the epitaxial SrTiO 3 /SrZrO 3 (0 0 1) heterojunction
journal, January 2012
- Schafranek, R.; Baniecki, J. D.; Ishii, M.
- Journal of Physics D: Applied Physics, Vol. 45, Issue 5
Properties of epitaxial BaTiO 3 deposited on GaAs
journal, January 2013
- Contreras-Guerrero, R.; Veazey, J. P.; Levy, J.
- Applied Physics Letters, Vol. 102, Issue 1
SrTiO3–SrZrO3 solid solution: Phase formation kinetics and mechanism through solid-oxide reaction
journal, July 2005
- Bera, J.; Rout, S. K.
- Materials Research Bulletin, Vol. 40, Issue 7
Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy
journal, August 1983
- Kraut, E. A.; Grant, R. W.; Waldrop, J. R.
- Physical Review B, Vol. 28, Issue 4
Thermal stability of the SrTiO3∕(Ba,Sr)O stacks epitaxially grown on Si
journal, February 2006
- Marchiori, Chiara; Sousa, M.; Guiller, A.
- Applied Physics Letters, Vol. 88, Issue 7
Preparation of a clean Ge(001) surface using oxygen plasma cleaning
journal, May 2013
- Ponath, Patrick; Posadas, Agham B.; Hatch, Richard C.
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100)
journal, August 2004
- Amy, F.; Wan, A. S.; Kahn, A.
- Journal of Applied Physics, Vol. 96, Issue 3
Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)
journal, January 2011
- Posadas, A.; Berg, M.; Seo, H.
- Applied Physics Letters, Vol. 98, Issue 5
Works referencing / citing this record:
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
text, January 2018
- Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui
- arXiv
Crystalline SrZrO 3 deposition on Ge (001) by atomic layer deposition for high- k dielectric applications
journal, July 2018
- Hu, Shen; Ji, Li; Chen, Pei-Yu
- Journal of Applied Physics, Vol. 124, Issue 4
Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode
journal, March 2018
- Stoerzinger, Kelsey A.; Du, Yingge; Spurgeon, Steven R.
- MRS Communications, Vol. 8, Issue 02
Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb 2 Se 3 /ZnS Heterointerfaces
journal, November 2016
- Siol, Sebastian; Schulz, Philip; Young, Matthew
- Advanced Materials Interfaces, Vol. 3, Issue 24
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
journal, July 2019
- Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior
- Advanced Functional Materials
Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
journal, November 2018
- Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui
- Applied Physics Letters, Vol. 113, Issue 20