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Title: Fractional quantum Hall effect at Landau level filling ν = 4/11

In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Princeton Univ., Princeton, NJ (United States)
Publication Date:
OSTI Identifier:
1184984
Report Number(s):
SAND--2014-20014J
Journal ID: ISSN 1098-0121; PRBMDO; 547344; TRN: US1600810
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 4; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS