Charge carrier transport properties in layer structured hexagonal boron nitride

Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4898630

Title: Charge carrier transport properties in layer structured hexagonal boron nitride

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Authors:: Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

Publication Date:: Wed Oct 01 00:00:00 EDT 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1183234

Alternate Identifier(s):: OSTI ID: 1420609

Grant/Contract Number:: FG02- 09ER46552

Resource Type:: Published Article

Journal Name:: AIP Advances

Additional Journal Information:: Journal Name: AIP Advances Journal Volume: 4 Journal Issue: 10; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

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                    Doan, T. C., Li, J., Lin, J. Y., and Jiang, H. X. Charge carrier transport properties in layer structured hexagonal boron nitride.  United States: N. p., 2014. 
Web.  doi:10.1063/1.4898630.

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                    Doan, T. C., Li, J., Lin, J. Y., & Jiang, H. X. Charge carrier transport properties in layer structured hexagonal boron nitride.  United States.  https://doi.org/10.1063/1.4898630

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                    Doan, T. C., Li, J., Lin, J. Y., and Jiang, H. X. Wed .  
"Charge carrier transport properties in layer structured hexagonal boron nitride".  United States.  https://doi.org/10.1063/1.4898630.

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@article{osti_1183234,

  title        = {Charge carrier transport properties in layer structured hexagonal boron nitride},

  author       = {Doan, T. C. and Li, J. and Lin, J. Y. and Jiang, H. X.},

  abstractNote = {},

  doi          = {10.1063/1.4898630},

  journal      = {AIP Advances},

  number       = 10,

  volume       = 4,

  place        = {United States},

  year         = {Wed Oct 01 00:00:00 EDT 2014},

  month        = {Wed Oct 01 00:00:00 EDT 2014}

}

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