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Title: Two-dimensional electron gas in monolayer InN quantum wells

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [3]
  1. Sandia National Laboratories, Albuquerque, NM (United States)
  2. Boston Univ., Boston, MA (United States)
  3. Princeton Univ., NJ (United States)
Publication Date:
OSTI Identifier:
1183081
Report Number(s):
SAND2014-16698J
Journal ID: ISSN 0003-6951; APPLAB; 534591
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY