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Title: Electronic structure basis for the extraordinary magnetoresistance in WTe2

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe₂ was identified.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [4]
  1. Princeton Univ., Princeton, NJ (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Princeton Univ., Princeton, NJ (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
OSTI Identifier:
1182491
Report Number(s):
BNL--107361-2015-JA
Journal ID: ISSN 0031-9007; PRLTAO; R&D Project: PO016; KC0202020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 21; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY