Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- substrate
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1180842
- Grant/Contract Number:
- AC02-05CH11231; FG02-07ER46352; SC0012575
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 90 Journal Issue: 24; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3 × 3 substrate. United States: N. p., 2014.
Web. doi:10.1103/PhysRevB.90.245433.
Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, & Bansil, Arun. Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3 × 3 substrate. United States. https://doi.org/10.1103/PhysRevB.90.245433
Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Mon .
"Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3 × 3 substrate". United States. https://doi.org/10.1103/PhysRevB.90.245433.
@article{osti_1180842,
title = {Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3 × 3 substrate},
author = {Huang, Zhi-Quan and Chou, Bo-Hung and Hsu, Chia-Hsiu and Chuang, Feng-Chuan and Lin, Hsin and Bansil, Arun},
abstractNote = {},
doi = {10.1103/PhysRevB.90.245433},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 24,
volume = 90,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}
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https://doi.org/10.1103/PhysRevB.90.245433
https://doi.org/10.1103/PhysRevB.90.245433
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Cited by: 10 works
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