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Title: Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV isoelectronic center

Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4]
  1. State Univ. of New York (SUNY), Buffalo, NY (United States)
  2. Beijing Computational Science Research Center (China)
  3. Rensselaer Polytechnic Inst., Troy, NY (United States)
  4. State Univ. of New York (SUNY), Buffalo, NY (United States); Beijing Computational Science Research Center (China)
Publication Date:
OSTI Identifier:
1180840
Grant/Contract Number:
SC0002623
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English