Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator

Wilson, Justin H.; Efimkin, Dmitry K.; Galitski, Victor M.

doi:10.1103/PhysRevB.90.205432

Title: Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator

Full Record
Other Related Research

Authors:: Wilson, Justin H.; Efimkin, Dmitry K.; Galitski, Victor M.

Publication Date:: Mon Nov 24 00:00:00 EST 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1180497

Grant/Contract Number:: SC0001911

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 90; Journal Issue: 20; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wilson, Justin H., Efimkin, Dmitry K., and Galitski, Victor M. Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator.  United States: N. p., 2014. 
Web.  doi:10.1103/PhysRevB.90.205432.

Copy to clipboard


                    Wilson, Justin H., Efimkin, Dmitry K., & Galitski, Victor M. Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator.  United States.  https://doi.org/10.1103/PhysRevB.90.205432

Copy to clipboard


                    Wilson, Justin H., Efimkin, Dmitry K., and Galitski, Victor M. Mon .  
"Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator".  United States.  https://doi.org/10.1103/PhysRevB.90.205432.

Copy to clipboard


                    
@article{osti_1180497,

  title        = {Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator},

  author       = {Wilson, Justin H. and Efimkin, Dmitry K. and Galitski, Victor M.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.90.205432},

  journal      = {Physical Review B},

  number       = 20,

  volume       = 90,

  place        = {United States},

  year         = {Mon Nov 24 00:00:00 EST 2014},

  month        = {Mon Nov 24 00:00:00 EST 2014}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.90.205432

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Faraday Rotation Due to Surface States in the Topological Insulator (Bi_1–xSb_x)₂Te₃

Journal Article Shao, Yinming ; Post, Kirk W. ; Wu, Jhih-Sheng ; ... - Nano Letters

For this research, using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb)₂Te₃ thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. Finally, the FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing manymore »« less
Cited by 19
https://doi.org/10.1021/acs.nanolett.6b04313

Full Text Available
Magneto-optical Faraday and Kerr effects in topological insulator films and in other layered quantized Hall systems

Journal Article Tse, Wang-Kong ; MacDonald, A. H. - Physical Review B
Cited by 131
https://doi.org/10.1103/PhysRevB.84.205327
Proximity-effect-induced Superconducting Gap in Topological Surface States – A Point Contact Spectroscopy Study of NbSe₂/Bi₂Se₃ Superconductor-Topological Insulator Heterostructures

Journal Article Dai, Wenqing ; Richardella, Anthony ; Du, Renzhong ; ... - Scientific Reports

Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi₂Se₃ thin films grown on superconducting NbSe₂ single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi₂Se₃ was observed in the spectra, which decreased with increasing Bi₂Se₃ layer thickness, consistent with the proximity effect in the bulk states of Bi₂Se₃ induced by NbSe₂. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi₂Se₃ on NbSe₂ sample, the bulk state gap value nearmore »« less
Cited by 19
https://doi.org/10.1038/s41598-017-07990-3

Full Text Available
High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator ${Cu}_{0.02} {Bi}_{2} {Se}_{3}$

Journal Article Wu, Liang ; Tse, Wang-Kong ; Brahlek, M. ; ... - Physical Review Letters
Cited by 52
https://doi.org/10.1103/PhysRevLett.115.217602
Terahertz Response and Colossal Kerr Rotation from the Surface States of the Topological Insulator Bi₂Se₃

Journal Article Valdés Aguilar, R. ; Stier, A. V. ; Liu, W. ; ... - Physical Review Letters
Cited by 191
https://doi.org/10.1103/PhysRevLett.108.087403

Similar Records