Antiferromagnetic phase of the gapless semiconductor V 3 Al

Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

doi:10.1103/PhysRevB.91.094409

Title: Antiferromagnetic phase of the gapless semiconductor $V_{3} Al$

Full Record
Other Related Research

Authors:: Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

Publication Date:: Wed Mar 11 00:00:00 EDT 2015

Sponsoring Org.:: USDOE

OSTI Identifier:: 1180134

Grant/Contract Number:: AC02-98CH10886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 91; Journal Issue: 9; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., and Heiman, D. Antiferromagnetic phase of the gapless semiconductor V 3 Al.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevB.91.094409.

Copy to clipboard


                    Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., & Heiman, D. Antiferromagnetic phase of the gapless semiconductor V 3 Al.  United States.  https://doi.org/10.1103/PhysRevB.91.094409

Copy to clipboard


                    Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., and Heiman, D. Wed .  
"Antiferromagnetic phase of the gapless semiconductor V 3 Al".  United States.  https://doi.org/10.1103/PhysRevB.91.094409.

Copy to clipboard


                    
@article{osti_1180134,

  title        = {Antiferromagnetic phase of the gapless semiconductor V 3 Al},

  author       = {Jamer, M. E. and Assaf, B. A. and Sterbinsky, G. E. and Arena, D. and Lewis, L. H. and Saúl, A. A. and Radtke, G. and Heiman, D.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.91.094409},

  journal      = {Physical Review B},

  number       = 9,

  volume       = 91,

  place        = {United States},

  year         = {Wed Mar 11 00:00:00 EDT 2015},

  month        = {Wed Mar 11 00:00:00 EDT 2015}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.91.094409

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 28 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Pressure-driven phase transition from antiferromagnetic semiconductor to nonmagnetic metal in the two-leg ladders $A {Fe}_{2} X_{3}$ ( $A = Ba, K$ ; $X = S, Se$ )

Journal Article Zhang, Yang ; Lin, Lingfang ; Zhang, Jun -Jie ; ... - Physical Review B

The recent discovery of superconductivity in BaFe₂S₃ has stimulated considerable interest in 123-type iron chalcogenides. This material is the first reported iron-based two-leg ladder superconductor, as opposed to the prevailing two-dimensional layered structures of the iron superconductor family. Once the hydrostatic pressure exceeds 11 GPa, BaFe₂S₃ changes from a semiconductor to a superconductor below 24 K. Although previous calculations correctly explained its ground-state magnetic state and electronic structure, the pressure-induced phase transition was not successfully reproduced. In this work, our first-principles calculations show that with increasing pressure the lattice constants as well as local magnetic moments are gradually suppressed, followedmore »« less
Cited by 41
https://doi.org/10.1103/PhysRevB.95.115154

Full Text Available
${}^{51}V$ -NMR study on the $S = \frac{1}{2}$ square lattice antiferromagnet $K_{2} V_{3} O_{8}$

Journal Article Takeda, H. ; Yasuoka, H. ; Yoshida, M. ; ... - Physical Review. B
Cited by 2
https://doi.org/10.1103/PhysRevB.100.054406
Antiferromagnetic and nematic phase transitions in $BaF e_{2} {(A s_{1 - x} P_{x})}_{2}$ studied by ac microcalorimetry and SQUID magnetometry

Journal Article Luo, X. ; Stanev, V. ; Shen, B. ; ... - Physical Review. B, Condensed Matter and Materials Physics

Inmore »« less
Cited by 8
https://doi.org/10.1103/PhysRevB.91.094512

Full Text Available
Stoichiometry dependence of potential screening at $La_{(1 - δ)} Al_{(1 + δ)} O_{3} / SrTiO_{3}$ interfaces

Journal Article Weiland, Conan ; Sterbinsky, George E. ; Rumaiz, Abdul K. ; ... - Physical Review. B, Condensed Matter and Materials Physics

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on ten-unit-cell-thick La_(1-δ)Al_(1+δ)O₃ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO₃. Only Al-rich films are known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile among the Al-rich, La-rich, and stoichiometric films: significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich film shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at themore »« less
Cited by 11
https://doi.org/10.1103/PhysRevB.91.165103
Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$

Journal Article Sun, F. ; Zhao, G. Q. ; Escanhoela, Jr., C. A. ; ... - Physical Review B

We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1-x,K_x)(Zn_1-y,Mn_y)₂As₂ to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - Asmore »« less
Cited by 20
https://doi.org/10.1103/PhysRevB.95.094412

Full Text Available

Similar Records

Title: Antiferromagnetic phase of the gapless semiconductor V 3 Al

Citation Formats

Title: Antiferromagnetic phase of the gapless semiconductor $V_{3} Al$