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Title: Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180123
Grant/Contract Number:  
FG02–07ER46386; AC02–05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 90 Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., and Haller, E. E. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.165204.
Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., & Haller, E. E. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity. United States. https://doi.org/10.1103/PhysRevB.90.165204
Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., and Haller, E. E. Fri . "Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity". United States. https://doi.org/10.1103/PhysRevB.90.165204.
@article{osti_1180123,
title = {Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity},
author = {Teklemichael, S. T. and McCluskey, M. D. and Buchowicz, G. and Dubon, O. D. and Haller, E. E.},
abstractNote = {},
doi = {10.1103/PhysRevB.90.165204},
journal = {Physical Review B},
number = 16,
volume = 90,
place = {United States},
year = {Fri Oct 17 00:00:00 EDT 2014},
month = {Fri Oct 17 00:00:00 EDT 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.90.165204

Citation Metrics:
Cited by: 2 works
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Works referenced in this record:

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
journal, February 2000

  • Wei, Su-Huai; Zhang, S. B.; Zunger, Alex
  • Journal of Applied Physics, Vol. 87, Issue 3
  • DOI: 10.1063/1.372014

Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairs
journal, June 1982


Electronic structure calculations for substitutional copper and monovacancies in silicon
journal, August 2006


Breakdown in silicon oxides—correlation with Cu precipitates
journal, August 1984

  • Honda, Kouichirou; Ohsawa, Akira; Toyokura, Nobuo
  • Applied Physics Letters, Vol. 45, Issue 3
  • DOI: 10.1063/1.95168

Can highly enriched 28Si reveal new things about old defects?
journal, December 2007


Infrared Absorption by Ag, Cu, and Au Acceptors in ZnTe
journal, July 1981

  • Samindayar, K.; Magnea, N.; Pautrat, J. L.
  • physica status solidi (b), Vol. 106, Issue 1
  • DOI: 10.1002/pssb.2221060124

Physics of ultra-pure germanium
journal, February 1981

  • Haller, Eugene E.; Hansen, William L.; Goulding, Frederick S.
  • Advances in Physics, Vol. 30, Issue 1
  • DOI: 10.1080/00018738100101357

Motion of Electrons and Holes in Perturbed Periodic Fields
journal, February 1955


Reduction of the Linewidths of Deep Luminescence Centers in Si 28 Reveals Fingerprints of the Isotope Constituents
journal, April 2008


Impurities in silicon solar cells
journal, April 1980

  • Davis, J.R.; Rohatgi, A.; Hopkins, R.H.
  • IEEE Transactions on Electron Devices, Vol. 27, Issue 4, p. 677-687
  • DOI: 10.1109/T-ED.1980.19922

Hydrogen Defect-Level Pinning in Semiconductors: The Muonium Equivalent
journal, September 2008


Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon
journal, August 1998


Deep levels of copper in silicon
journal, September 1987

  • Brotherton, S. D.; Ayres, J. R.; Gill, A.
  • Journal of Applied Physics, Vol. 62, Issue 5
  • DOI: 10.1063/1.339564

Electronic structure of copper, silver, and gold impurities in silicon
journal, July 1985


Cu-doping of ZnO by nuclear transmutation
journal, November 2011

  • Selim, F. A.; Tarun, M. C.; Wall, D. E.
  • Applied Physics Letters, Vol. 99, Issue 20
  • DOI: 10.1063/1.3662014

Copper, lithium, and hydrogen passivation of boron in c -Si
journal, March 1990


On the position of energy levels related to transition-metal impurities in III-V semiconductors
journal, September 1982


Properties of Silicon Doped with Iron or Copper
journal, December 1957


Universal alignment of hydrogen levels in semiconductors, insulators and solutions
journal, June 2003


The copper centre: a transient shallow acceptor in ZnS and CdS
journal, January 1992


Energy Levels in Silicon
journal, August 1980