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Title: The fundamental downscaling limit of field effect transistors

Authors:
 [1] ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1322, USA
Publication Date:
OSTI Identifier:
1179740
Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English