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Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [4] ;  [4] ;  [3] ;  [3] ;  [1]
  1. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  3. Department of Chemistry, University of Warwick, Coventry CV4 7AL, United Kingdom
  4. Materials Science and Engineering, Binghamton University, Binghamton, New York 13902, USA
Publication Date:
OSTI Identifier:
1179636
Grant/Contract Number:
AC02-98CH10886
Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English