Bi-induced band gap reduction in epitaxial InSbBi alloys
Abstract
The properties of molecular beam epitaxy-grown InSb1-x Bix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ~35 meV/%Bi.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1179636
- Alternate Identifier(s):
- OSTI ID: 1212662; OSTI ID: 1420682
- Grant/Contract Number:
- AC02-98CH10886; AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 21; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; thin film growth; III-V semiconductors; lattice constants; Rutherford backscattering; fluid drops
Citation Formats
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., and Veal, T. D. Bi-induced band gap reduction in epitaxial InSbBi alloys. United States: N. p., 2014.
Web. doi:10.1063/1.4902442.
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., & Veal, T. D. Bi-induced band gap reduction in epitaxial InSbBi alloys. United States. https://doi.org/10.1063/1.4902442
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., and Veal, T. D. Mon .
"Bi-induced band gap reduction in epitaxial InSbBi alloys". United States. https://doi.org/10.1063/1.4902442.
@article{osti_1179636,
title = {Bi-induced band gap reduction in epitaxial InSbBi alloys},
author = {Rajpalke, M. K. and Linhart, W. M. and Yu, K. M. and Birkett, M. and Alaria, J. and Bomphrey, J. J. and Sallis, S. and Piper, L. F. J. and Jones, T. S. and Ashwin, M. J. and Veal, T. D.},
abstractNote = {The properties of molecular beam epitaxy-grown InSb1-x Bix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ~35 meV/%Bi.},
doi = {10.1063/1.4902442},
journal = {Applied Physics Letters},
number = 21,
volume = 105,
place = {United States},
year = {Mon Nov 24 00:00:00 EST 2014},
month = {Mon Nov 24 00:00:00 EST 2014}
}
https://doi.org/10.1063/1.4902442
Web of Science
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