DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

Abstract

The properties of molecular beam epitaxy-grown InSb1-x Bix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ~35 meV/%Bi.

Authors:
; ; ; ORCiD logo; ; ; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1179636
Alternate Identifier(s):
OSTI ID: 1212662; OSTI ID: 1420682
Grant/Contract Number:  
AC02-98CH10886; AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thin film growth; III-V semiconductors; lattice constants; Rutherford backscattering; fluid drops

Citation Formats

Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., and Veal, T. D. Bi-induced band gap reduction in epitaxial InSbBi alloys. United States: N. p., 2014. Web. doi:10.1063/1.4902442.
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., & Veal, T. D. Bi-induced band gap reduction in epitaxial InSbBi alloys. United States. https://doi.org/10.1063/1.4902442
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., and Veal, T. D. Mon . "Bi-induced band gap reduction in epitaxial InSbBi alloys". United States. https://doi.org/10.1063/1.4902442.
@article{osti_1179636,
title = {Bi-induced band gap reduction in epitaxial InSbBi alloys},
author = {Rajpalke, M. K. and Linhart, W. M. and Yu, K. M. and Birkett, M. and Alaria, J. and Bomphrey, J. J. and Sallis, S. and Piper, L. F. J. and Jones, T. S. and Ashwin, M. J. and Veal, T. D.},
abstractNote = {The properties of molecular beam epitaxy-grown InSb1-x Bix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ~35 meV/%Bi.},
doi = {10.1063/1.4902442},
journal = {Applied Physics Letters},
number = 21,
volume = 105,
place = {United States},
year = {Mon Nov 24 00:00:00 EST 2014},
month = {Mon Nov 24 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4902442

Citation Metrics:
Cited by: 36 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003

  • Francoeur, S.; Seong, M. -J.; Mascarenhas, A.
  • Applied Physics Letters, Vol. 82, Issue 22
  • DOI: 10.1063/1.1581983

Valence band anticrossing in GaBixAs1−x
journal, July 2007

  • Alberi, K.; Dubon, O. D.; Walukiewicz, W.
  • Applied Physics Letters, Vol. 91, Issue 5
  • DOI: 10.1063/1.2768312

Composition dependence of photoluminescence of GaAs1−xBix alloys
journal, July 2009

  • Lu, Xianfeng; Beaton, D. A.; Lewis, R. B.
  • Applied Physics Letters, Vol. 95, Issue 4
  • DOI: 10.1063/1.3191675

Giant Spin-Orbit Bowing in GaAs 1 x Bi x
journal, August 2006


Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
journal, January 2012


Growth of GaSb 1−x Bi x by molecular beam epitaxy
journal, March 2012

  • Wang, Shumin; Saha Roy, Ivy; Shi, Peixiong
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 2
  • DOI: 10.1116/1.3672025

Growth and properties of GaSbBi alloys
journal, September 2013

  • Rajpalke, M. K.; Linhart, W. M.; Birkett, M.
  • Applied Physics Letters, Vol. 103, Issue 14
  • DOI: 10.1063/1.4824077

Temperature dependence of the band gap of GaSb 1−x Bi x alloys with 0 < x ≤ 0.042 determined by photoreflectance
journal, December 2013

  • Kopaczek, J.; Kudrawiec, R.; Linhart, W. M.
  • Applied Physics Letters, Vol. 103, Issue 26
  • DOI: 10.1063/1.4858967

High Bi content GaSbBi alloys
journal, July 2014

  • Rajpalke, M. K.; Linhart, W. M.; Birkett, M.
  • Journal of Applied Physics, Vol. 116, Issue 4
  • DOI: 10.1063/1.4891217

Theoretical and experimental studies of electronic band structure for GaSb 1− x Bi x in the dilute Bi regime
journal, August 2014


Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
journal, September 2014

  • Kopaczek, J.; Rajpalke, M. K.; Linhart, W. M.
  • Applied Physics Letters, Vol. 105, Issue 11
  • DOI: 10.1063/1.4895930

Propriétés des alliages InSb1−xBix I. Mesures électriques
journal, January 1969


Propriétés des alliages InSb1−xBix II. Absorption Optique
journal, January 1969


Growth of InSb1-xBix single crystals by Czochralski method
journal, February 1972


Growth of metastable InSb 1− x Bi x thin films by multitarget sputtering
journal, August 1978

  • Zilko, J. L.; Greene, J. E.
  • Applied Physics Letters, Vol. 33, Issue 3
  • DOI: 10.1063/1.90317

Indium antimonide‐bismuth compositions grown by molecular beam epitaxy
journal, July 1982

  • Noreika, A. J.; Takei, W. J.; Francombe, M. H.
  • Journal of Applied Physics, Vol. 53, Issue 7
  • DOI: 10.1063/1.331327

Growth and characterization of InSbBi for long wavelength infrared photodetectors
journal, June 1997

  • Lee, J. J.; Kim, J. D.; Razeghi, M.
  • Applied Physics Letters, Vol. 70, Issue 24
  • DOI: 10.1063/1.119158

Molecular beam epitaxy growth of InSb1−xBix thin films
journal, September 2013


Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
journal, February 2002


InSb 1- x Bi x Films Grown by Molecular Beam Epitaxy
journal, April 1981

  • Oe, Kunishige; Ando, Seigo; Sugiyama, Koichi
  • Japanese Journal of Applied Physics, Vol. 20, Issue 4
  • DOI: 10.1143/JJAP.20.L303

InAsSbBi alloys grown by organometallic vapor‐phase epitaxy
journal, March 1994

  • Huang, K. T.; Chiu, C. T.; Cohen, R. M.
  • Journal of Applied Physics, Vol. 75, Issue 6
  • DOI: 10.1063/1.356179

Metalorganic chemical vapor deposition and characterization of the In‐As‐Sb‐Bi material system for infrared detection
journal, July 1988

  • Humphreys, T. P.; Chiang, P. K.; Bedair, S. M.
  • Applied Physics Letters, Vol. 53, Issue 2
  • DOI: 10.1063/1.100350

InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection
journal, January 1986

  • Bedair, S. M.; Humphreys, T. P.; Chaing, P. K.
  • MRS Proceedings, Vol. 90
  • DOI: 10.1557/PROC-90-447

SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA
conference, January 1999

  • Mayer, M.
  • The fifteenth international conference on the application of accelerators in research and industry, AIP Conference Proceedings
  • DOI: 10.1063/1.59188

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Molecular-beam epitaxy and lattice parameter of GaN x Sb 1− x : deviation from Vegard's law for x > 0.02
journal, June 2013


Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
journal, January 2014


Organometallic vapor‐phase epitaxy growth and characterization of Bi‐containing III/V alloys
journal, November 1990

  • Ma, K. Y.; Fang, Z. M.; Cohen, R. M.
  • Journal of Applied Physics, Vol. 68, Issue 9
  • DOI: 10.1063/1.346166

Valence-band anticrossing in mismatched III-V semiconductor alloys
journal, January 2007


Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
journal, December 2011

  • Usman, Muhammad; Broderick, Christopher A.; Lindsay, Andrew
  • Physical Review B, Vol. 84, Issue 24
  • DOI: 10.1103/PhysRevB.84.245202