Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces

Weiland, Conan; Sterbinsky, George E.; Rumaiz, Abdul K.; Hellberg, C. Stephen; Woicik, Joseph C.; Zhu, Shaobo; Schlom, Darrell G.

doi:10.1103/PhysRevB.91.165103

Title: Stoichiometry dependence of potential screening at $La_{(1 - δ)} Al_{(1 + δ)} O_{3} / SrTiO_{3}$ interfaces

Abstract

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on ten-unit-cell-thick La_(1-δ)Al_(1+δ)O₃ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO₃. Only Al-rich films are known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile among the Al-rich, La-rich, and stoichiometric films: significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich film shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect-driven electronic reconstruction.

Authors:: Weiland, Conan; Sterbinsky, George E.; Rumaiz, Abdul K.; Hellberg, C. Stephen; Woicik, Joseph C.; Zhu, Shaobo; Schlom, Darrell G.

Publication Date:: Fri Apr 03 00:00:00 EDT 2015

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1177475

Grant/Contract Number:: AC02-98CH10886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 91 Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Weiland, Conan, Sterbinsky, George E., Rumaiz, Abdul K., Hellberg, C. Stephen, Woicik, Joseph C., Zhu, Shaobo, and Schlom, Darrell G. Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevB.91.165103.

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                    Weiland, Conan, Sterbinsky, George E., Rumaiz, Abdul K., Hellberg, C. Stephen, Woicik, Joseph C., Zhu, Shaobo, & Schlom, Darrell G. Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces.  United States.  https://doi.org/10.1103/PhysRevB.91.165103

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                    Weiland, Conan, Sterbinsky, George E., Rumaiz, Abdul K., Hellberg, C. Stephen, Woicik, Joseph C., Zhu, Shaobo, and Schlom, Darrell G. Fri .  
"Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces".  United States.  https://doi.org/10.1103/PhysRevB.91.165103.

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@article{osti_1177475,

  title        = {Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces},

  author       = {Weiland, Conan and Sterbinsky, George E. and Rumaiz, Abdul K. and Hellberg, C. Stephen and Woicik, Joseph C. and Zhu, Shaobo and Schlom, Darrell G.},

  abstractNote = {Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on ten-unit-cell-thick La(1-δ)Al(1+δ)O₃ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO₃. Only Al-rich films are known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile among the Al-rich, La-rich, and stoichiometric films: significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich film shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect-driven electronic reconstruction.},

  doi          = {10.1103/PhysRevB.91.165103},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 16,

  volume       = 91,

  place        = {United States},

  year         = {Fri Apr 03 00:00:00 EDT 2015},

  month        = {Fri Apr 03 00:00:00 EDT 2015}

}

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Title: Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces

Abstract

Citation Formats

The electron attenuation length revisited journal, June 2002

Generalized Gradient Approximation Made Simple journal, October 1996

Magnetic effects at the interface between non-magnetic oxides journal, June 2007

Projector augmented-wave method journal, December 1994

Oxide Interfaces--An Opportunity for Electronics journal, March 2010

Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization: Depth profiling by VKE-XPS journal, April 2014

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO 3 /LaAlO 3 oxide heterostructures journal, February 2013

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PHOTOELECTRON ANGULAR DISTRIBUTION PARAMETERS FOR ELEMENTS Z=55 to Z=100 IN THE PHOTOELECTRON ENERGY RANGE 100–5000 eV journal, November 2002

Hybridization and Bond-Orbital Components in Site-Specific X-Ray Photoelectron Spectra of Rutile T i O 2 journal, July 2002

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PHOTOELECTRON ANGULAR DISTRIBUTION PARAMETERS FOR ELEMENTS Z=1 TO Z=54 IN THE PHOTOELECTRON ENERGY RANGE 100–5000 eV journal, January 2001

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Why some interfaces cannot be sharp journal, January 2006

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures journal, September 2006

Oxygen vacancies in N doped anatase TiO2: Experiment and first-principles calculations journal, December 2009

Profiling the Interface Electron Gas of LaAlO 3 / SrTiO 3 Heterostructures with Hard X-Ray Photoelectron Spectroscopy journal, April 2009

Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions journal, October 2010

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The stability of ionic crystal surfaces journal, November 1979

Effect of oxygen vacancies in the SrTiO 3 substrate on the electrical properties of the LaAlO 3 ∕ SrTiO 3 interface journal, March 2007

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction journal, October 2010

A polarity-induced defect mechanism for conductivity and magnetism at polar–nonpolar oxide interfaces journal, October 2014

Mapping Band Alignment across Complex Oxide Heterointerfaces journal, December 2012

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Title: Stoichiometry dependence of potential screening at $La_{(1 - δ)} Al_{(1 + δ)} O_{3} / SrTiO_{3}$ interfaces

The electron attenuation length revisited
journal, June 2002

Generalized Gradient Approximation Made Simple
journal, October 1996

Magnetic effects at the interface between non-magnetic oxides
journal, June 2007

Projector augmented-wave method
journal, December 1994

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journal, March 2010

Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization: Depth profiling by VKE-XPS
journal, April 2014

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO $_{3}$ /LaAlO $_{3}$ oxide heterostructures
journal, February 2013

Understanding the mechanism of conductivity at the LaAlO3/SrTiO3(001) interface
journal, July 2011

PHOTOELECTRON ANGULAR DISTRIBUTION PARAMETERS FOR ELEMENTS Z=55 to Z=100 IN THE PHOTOELECTRON ENERGY RANGE 100–5000 eV
journal, November 2002

Hybridization and Bond-Orbital Components in Site-Specific X-Ray Photoelectron Spectra of Rutile $T i O_{2}$
journal, July 2002

Polar-on-nonpolar epitaxy
journal, February 1987

Note: Alignment/focus dependent core-line sensitivity for quantitative chemical analysis in hard x-ray photoelectron spectroscopy using a hemispherical electron analyzer
journal, March 2013

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

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LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
journal, August 2013

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journal, May 2009

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journal, July 2000

PHOTOELECTRON ANGULAR DISTRIBUTION PARAMETERS FOR ELEMENTS Z=1 TO Z=54 IN THE PHOTOELECTRON ENERGY RANGE 100–5000 eV
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Epitaxial SrTiO₃ films with electron mobilities exceeding 30,000 cm² V^-1 s^-1
journal, April 2010

Band alignment in LaAlO $_{3}$ /SrTiO $_{3}$ oxide heterostructures inferred from hard x-ray photoelectron spectroscopy
journal, September 2013

Nanoscale control of an interfacial metal–insulator transition at room temperature
journal, March 2008

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004

Origin of Charge Density at ${LaAlO}_{3}$ on ${SrTiO}_{3}$ Heterointerfaces: Possibility of Intrinsic Doping
journal, May 2007

Why some interfaces cannot be sharp
journal, January 2006

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures
journal, September 2006

Oxygen vacancies in N doped anatase TiO2: Experiment and first-principles calculations
journal, December 2009

Profiling the Interface Electron Gas of ${LaAlO}_{3} / {SrTiO}_{3}$ Heterostructures with Hard X-Ray Photoelectron Spectroscopy
journal, April 2009

Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions
journal, October 2010

Effect of Growth Induced (Non)Stoichiometry on Interfacial Conductance in ${LaAlO}_{3} / {SrTiO}_{3}$
journal, May 2013

The stability of ionic crystal surfaces
journal, November 1979

Effect of oxygen vacancies in the ${SrTiO}_{3}$ substrate on the electrical properties of the ${LaAlO}_{3} ∕ {SrTiO}_{3}$ interface
journal, March 2007

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction
journal, October 2010

A polarity-induced defect mechanism for conductivity and magnetism at polar–nonpolar oxide interfaces
journal, October 2014

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journal, December 2012

Composition, structure, and stability of ${RuO}_{2} (110)$ as a function of oxygen pressure
journal, December 2001

X-ray photoemission studies of the metal-insulator transition in ${LaAlO}_{3} / {SrTiO}_{3}$ structures grown by molecular beam epitaxy
journal, December 2009

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journal, January 2005