skip to main content

DOE PAGESDOE PAGES

Title: Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
OSTI Identifier:
1149496
Grant/Contract Number:
AC02-05CH11231
Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 9; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English