Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)
Abstract
Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film. We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.
- Authors:
-
[1];
- Univ. of Texas, Austin, TX (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1140388
- Report Number(s):
- SAND-2014-0746J
Journal ID: ISSN 0039-6028; PII: S0039602814002234
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Surface Science
- Additional Journal Information:
- Journal Volume: 630; Journal Issue: C; Related Information: Proposed for publication in Surface Science.; Journal ID: ISSN 0039-6028
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; silver film; dewetting; epitaxial growth; plasmonic devices
Citation Formats
Sanders, Charlotte E., Zhang, Chendong D., Kellogg, Gary L., and Shih, Chih-Kang. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111). United States: N. p., 2014.
Web. doi:10.1016/j.susc.2014.07.030.
Sanders, Charlotte E., Zhang, Chendong D., Kellogg, Gary L., & Shih, Chih-Kang. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111). United States. https://doi.org/10.1016/j.susc.2014.07.030
Sanders, Charlotte E., Zhang, Chendong D., Kellogg, Gary L., and Shih, Chih-Kang. Fri .
"Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)". United States. https://doi.org/10.1016/j.susc.2014.07.030. https://www.osti.gov/servlets/purl/1140388.
@article{osti_1140388,
title = {Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)},
author = {Sanders, Charlotte E. and Zhang, Chendong D. and Kellogg, Gary L. and Shih, Chih-Kang},
abstractNote = {Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film. We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.},
doi = {10.1016/j.susc.2014.07.030},
journal = {Surface Science},
number = C,
volume = 630,
place = {United States},
year = {Fri Aug 01 00:00:00 EDT 2014},
month = {Fri Aug 01 00:00:00 EDT 2014}
}
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Works referencing / citing this record:
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