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Title: Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [4] ;  [3] ;  [1]
  1. Department of Physics, Soongsil University, Seoul 156-743, Korea
  2. Department of Physics, Sogang University, Seoul 121-742, Korea
  3. Department of Chemical Engineering, Soongsil University, Seoul 156-743, Korea
  4. Department of Chemical Engineering, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-476, Korea
Publication Date:
OSTI Identifier:
1114976
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English