Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1103622
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 85; Journal Issue: 24; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Zhao, S., Mi, Z., Kibria, M. G., Li, Q., and Wang, G. T. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires. United States: N. p., 2012.
Web. doi:10.1103/PhysRevB.85.245313.
Zhao, S., Mi, Z., Kibria, M. G., Li, Q., & Wang, G. T. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires. United States. https://doi.org/10.1103/PhysRevB.85.245313
Zhao, S., Mi, Z., Kibria, M. G., Li, Q., and Wang, G. T. Wed .
"Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires". United States. https://doi.org/10.1103/PhysRevB.85.245313.
@article{osti_1103622,
title = {Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires},
author = {Zhao, S. and Mi, Z. and Kibria, M. G. and Li, Q. and Wang, G. T.},
abstractNote = {},
doi = {10.1103/PhysRevB.85.245313},
journal = {Physical Review B},
number = 24,
volume = 85,
place = {United States},
year = {Wed Jun 20 00:00:00 EDT 2012},
month = {Wed Jun 20 00:00:00 EDT 2012}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.85.245313
https://doi.org/10.1103/PhysRevB.85.245313
Other availability
Cited by: 27 works
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