Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102795
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 23; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ma, Jie, and Wei, Su-Huai. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States: N. p., 2013.
Web. doi:10.1103/PhysRevLett.110.235901.
Ma, Jie, & Wei, Su-Huai. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States. https://doi.org/10.1103/PhysRevLett.110.235901
Ma, Jie, and Wei, Su-Huai. Tue .
"Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe". United States. https://doi.org/10.1103/PhysRevLett.110.235901.
@article{osti_1102795,
title = {Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe},
author = {Ma, Jie and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.235901},
journal = {Physical Review Letters},
number = 23,
volume = 110,
place = {United States},
year = {Tue Jun 04 00:00:00 EDT 2013},
month = {Tue Jun 04 00:00:00 EDT 2013}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.235901
https://doi.org/10.1103/PhysRevLett.110.235901
Other availability
Cited by: 43 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.