Origin of the Variation of Exciton Binding Energy in Semiconductors

Dvorak, Marc; Wei, Su-Huai; Wu, Zhigang

doi:10.1103/PhysRevLett.110.016402

Title: Origin of the Variation of Exciton Binding Energy in Semiconductors

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Authors:: Dvorak, Marc; Wei, Su-Huai; Wu, Zhigang

Publication Date:: Wed Jan 02 00:00:00 EST 2013

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102624

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 1; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Dvorak, Marc, Wei, Su-Huai, and Wu, Zhigang. Origin of the Variation of Exciton Binding Energy in Semiconductors.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevLett.110.016402.

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                    Dvorak, Marc, Wei, Su-Huai, & Wu, Zhigang. Origin of the Variation of Exciton Binding Energy in Semiconductors.  United States.  https://doi.org/10.1103/PhysRevLett.110.016402

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                    Dvorak, Marc, Wei, Su-Huai, and Wu, Zhigang. Wed .  
"Origin of the Variation of Exciton Binding Energy in Semiconductors".  United States.  https://doi.org/10.1103/PhysRevLett.110.016402.

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@article{osti_1102624,

  title        = {Origin of the Variation of Exciton Binding Energy in Semiconductors},

  author       = {Dvorak, Marc and Wei, Su-Huai and Wu, Zhigang},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.110.016402},

  journal      = {Physical Review Letters},

  number       = 1,

  volume       = 110,

  place        = {United States},

  year         = {Wed Jan 02 00:00:00 EST 2013},

  month        = {Wed Jan 02 00:00:00 EST 2013}

}

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