Role of recombination kinetics and grain size in radiation-induced amorphization

Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela

doi:10.1103/PhysRevB.86.214110

Title: Role of recombination kinetics and grain size in radiation-induced amorphization

Full Record
Other Related Research

Authors:: Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela

Publication Date:: Thu Dec 27 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102596

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 86; Journal Issue: 21; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Swaminathan, Narasimhan, Morgan, Dane, and Szlufarska, Izabela. Role of recombination kinetics and grain size in radiation-induced amorphization.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.86.214110.

Copy to clipboard


                    Swaminathan, Narasimhan, Morgan, Dane, & Szlufarska, Izabela. Role of recombination kinetics and grain size in radiation-induced amorphization.  United States.  https://doi.org/10.1103/PhysRevB.86.214110

Copy to clipboard


                    Swaminathan, Narasimhan, Morgan, Dane, and Szlufarska, Izabela. Thu .  
"Role of recombination kinetics and grain size in radiation-induced amorphization".  United States.  https://doi.org/10.1103/PhysRevB.86.214110.

Copy to clipboard


                    
@article{osti_1102596,

  title        = {Role of recombination kinetics and grain size in radiation-induced amorphization},

  author       = {Swaminathan, Narasimhan and Morgan, Dane and Szlufarska, Izabela},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.86.214110},

  journal      = {Physical Review B},

  number       = 21,

  volume       = 86,

  place        = {United States},

  year         = {Thu Dec 27 00:00:00 EST 2012},

  month        = {Thu Dec 27 00:00:00 EST 2012}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.86.214110

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 21 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Role of grain size on redox induced compositional stresses in Pr doped ceria thin films

Journal Article Sheth, Jay ; Chen, Di ; Tuller, Harry L. ; ... - Physical Chemistry Chemical Physics. PCCP (Print)

In-situwafer curvature and x-ray diffraction measurements were employed to investigate the grain size dependence of stress and strain in Pr doped ceria thin films.
https://doi.org/10.1039/c7cp00088j
Thermal Stability of Light-Induced Defects in Hydrogenated Amorphous Silicon: Effect on Defect Creation Kinetics and Role of Network Microstructure

Journal Article Stradins, P ; Kondo, M ; Matsuda, A - Journal of Non-Crystalline Solids

The kinetics of light-induced defect creation in a-Si:H is studied in early-time limit and as function of pre-existing defects of different thermal stability by electron spin resonance and optical spectroscopy techniques. Both for cw and for laser pulse exposures, the early-time kinetics follows sublinear t{sup {beta}} time dependences, similar to the long-time limit. In addition, the overall defect creation rate is not a single function of the total defect number. Instead, it depends on the thermal stability, or annealing energy distribution, of the defects present in the film. Furthermore, creation of the thermally less stable defects is unaffected by themore »« less
https://doi.org/10.1016/j.jnoncrysol.2007.09.011
Role of radiation damage in the crystallization kinetics of thin amorphous dielectric layers

Journal Article Pavlov, P V ; Genkina, N A ; Shitova, E V ; ... - Phys. Status Solidi (a), v. 29, no. 1, pp. 303-307
https://doi.org/10.1002/pssa.2210290133
RADIATION-INDUCED DEFECTS IN ALKALI HALIDES, AND THEIR ROLE IN RECOMBINATION PROCESSES. Annual Progress Report, March 1, 1968--February 28, 1969.

Technical Report Murray, R B
RADIATION-INDUCED DEFECTS IN ALKALI HALIDES, AND THEIR ROLE IN RECOMBINATION PROCESSES. Final Report, March 1, 1967--July 15, 1970.

Technical Report Murray, R B

Similar Records