Orientation and rate dependence in high strain-rate compression of single-crystal silicon
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102542
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 86; Journal Issue: 24; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., and Collins, G. W. Orientation and rate dependence in high strain-rate compression of single-crystal silicon. United States: N. p., 2012.
Web. doi:10.1103/PhysRevB.86.245204.
Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., & Collins, G. W. Orientation and rate dependence in high strain-rate compression of single-crystal silicon. United States. https://doi.org/10.1103/PhysRevB.86.245204
Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., and Collins, G. W. Mon .
"Orientation and rate dependence in high strain-rate compression of single-crystal silicon". United States. https://doi.org/10.1103/PhysRevB.86.245204.
@article{osti_1102542,
title = {Orientation and rate dependence in high strain-rate compression of single-crystal silicon},
author = {Smith, R. F. and Minich, R. W. and Rudd, R. E. and Eggert, J. H. and Bolme, C. A. and Brygoo, S. L. and Jones, A. M. and Collins, G. W.},
abstractNote = {},
doi = {10.1103/PhysRevB.86.245204},
journal = {Physical Review B},
number = 24,
volume = 86,
place = {United States},
year = {Mon Dec 17 00:00:00 EST 2012},
month = {Mon Dec 17 00:00:00 EST 2012}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.86.245204
https://doi.org/10.1103/PhysRevB.86.245204
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Cited by: 24 works
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