Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces

Wagner, Sean R.; Lunt, Richard R.; Zhang, Pengpeng

doi:10.1103/PhysRevLett.110.086107

Title: Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces

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Authors:: Wagner, Sean R.; Lunt, Richard R.; Zhang, Pengpeng

Publication Date:: Wed Feb 20 00:00:00 EST 2013

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102326

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Wagner, Sean R., Lunt, Richard R., and Zhang, Pengpeng. Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevLett.110.086107.

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                    Wagner, Sean R., Lunt, Richard R., & Zhang, Pengpeng. Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces.  United States.  https://doi.org/10.1103/PhysRevLett.110.086107

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                    Wagner, Sean R., Lunt, Richard R., and Zhang, Pengpeng. Wed .  
"Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces".  United States.  https://doi.org/10.1103/PhysRevLett.110.086107.

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@article{osti_1102326,

  title        = {Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces},

  author       = {Wagner, Sean R. and Lunt, Richard R. and Zhang, Pengpeng},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.110.086107},

  journal      = {Physical Review Letters},

  number       = 8,

  volume       = 110,

  place        = {United States},

  year         = {Wed Feb 20 00:00:00 EST 2013},

  month        = {Wed Feb 20 00:00:00 EST 2013}

}

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