Spin diffusion in fullerene-based devices: Morphology effect

Nguyen, Tho D.; Wang, Fujian; Li, Xiao-Guang; Ehrenfreund, Eitan; Vardeny, Z. Valy

doi:10.1103/PhysRevB.87.075205

Title: Spin diffusion in fullerene-based devices: Morphology effect

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Authors:: Nguyen, Tho D.; Wang, Fujian; Li, Xiao-Guang; Ehrenfreund, Eitan; Vardeny, Z. Valy

Publication Date:: Tue Feb 19 00:00:00 EST 2013

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102309

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 87; Journal Issue: 7; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevB.87.075205.

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                    Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, & Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect.  United States.  https://doi.org/10.1103/PhysRevB.87.075205

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                    Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Tue .  
"Spin diffusion in fullerene-based devices: Morphology effect".  United States.  https://doi.org/10.1103/PhysRevB.87.075205.

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@article{osti_1102309,

  title        = {Spin diffusion in fullerene-based devices: Morphology effect},

  author       = {Nguyen, Tho D. and Wang, Fujian and Li, Xiao-Guang and Ehrenfreund, Eitan and Vardeny, Z. Valy},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.87.075205},

  journal      = {Physical Review B},

  number       = 7,

  volume       = 87,

  place        = {United States},

  year         = {Tue Feb 19 00:00:00 EST 2013},

  month        = {Tue Feb 19 00:00:00 EST 2013}

}

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