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Title: X-ray diffraction studies of trilayer oscillations in the preferred thickness of In films on Si(111)

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102232
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 87 Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Gray, A., Liu, Y., Hong, Hawoong, and Chiang, T. -C. X-ray diffraction studies of trilayer oscillations in the preferred thickness of In films on Si(111). United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.195415.
Gray, A., Liu, Y., Hong, Hawoong, & Chiang, T. -C. X-ray diffraction studies of trilayer oscillations in the preferred thickness of In films on Si(111). United States. https://doi.org/10.1103/PhysRevB.87.195415
Gray, A., Liu, Y., Hong, Hawoong, and Chiang, T. -C. Thu . "X-ray diffraction studies of trilayer oscillations in the preferred thickness of In films on Si(111)". United States. https://doi.org/10.1103/PhysRevB.87.195415.
@article{osti_1102232,
title = {X-ray diffraction studies of trilayer oscillations in the preferred thickness of In films on Si(111)},
author = {Gray, A. and Liu, Y. and Hong, Hawoong and Chiang, T. -C.},
abstractNote = {},
doi = {10.1103/PhysRevB.87.195415},
journal = {Physical Review B},
number = 19,
volume = 87,
place = {United States},
year = {Thu May 09 00:00:00 EDT 2013},
month = {Thu May 09 00:00:00 EDT 2013}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.87.195415

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Cited by: 7 works
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