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Title: Evolution of superclusters and delocalized states in GaAs1–xNx

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.
Authors:
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Publication Date:
OSTI Identifier:
1101811
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 86; Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English