Evolution of superclusters and delocalized states in GaAs1–xNx

Fluegel, B.; Alberi, K.; Beaton, D. A.; Crooker, S. A.; Ptak, A. J.; Mascarenhas, A.

doi:10.1103/PhysRevB.86.205203

Title: Evolution of superclusters and delocalized states in GaAs_1–xN_x

Abstract

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs_1–xN_x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Authors:: Fluegel, B.; Alberi, K.; Beaton, D. A.; Crooker, S. A.; Ptak, A. J.; Mascarenhas, A.

Publication Date:: Wed Nov 21 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101811

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 86 Journal Issue: 20; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.86.205203.

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                    Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., & Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx.  United States.  https://doi.org/10.1103/PhysRevB.86.205203

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                    Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Wed .  
"Evolution of superclusters and delocalized states in GaAs1–xNx".  United States.  https://doi.org/10.1103/PhysRevB.86.205203.

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@article{osti_1101811,

  title        = {Evolution of superclusters and delocalized states in GaAs1–xNx},

  author       = {Fluegel, B. and Alberi, K. and Beaton, D. A. and Crooker, S. A. and Ptak, A. J. and Mascarenhas, A.},

  abstractNote = {The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.},

  doi          = {10.1103/PhysRevB.86.205203},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 20,

  volume       = 86,

  place        = {United States},

  year         = {Wed Nov 21 00:00:00 EST 2012},

  month        = {Wed Nov 21 00:00:00 EST 2012}

}

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Works referenced in this record:

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Title: Evolution of superclusters and delocalized states in GaAs1–xNx

Abstract

Citation Formats

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Title: Evolution of superclusters and delocalized states in GaAs_1–xN_x

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