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Title: Origin of background electron concentration in InxGa1-xN alloys

Abstract

The origin of high background electron concentration (n) in InxGa1-xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5. A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100551
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 84 Journal Issue: 7; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., and Jiang, H. X.. Origin of background electron concentration in InxGa1-xN alloys. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.075327.
Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., & Jiang, H. X.. Origin of background electron concentration in InxGa1-xN alloys. United States. https://doi.org/10.1103/PhysRevB.84.075327
Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., and Jiang, H. X.. Mon . "Origin of background electron concentration in InxGa1-xN alloys". United States. https://doi.org/10.1103/PhysRevB.84.075327.
@article{osti_1100551,
title = {Origin of background electron concentration in InxGa1-xN alloys},
author = {Pantha, B. N. and Wang, H. and Khan, N. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {The origin of high background electron concentration (n) in InxGa1-xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5. A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN},
doi = {10.1103/PhysRevB.84.075327},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 7,
volume = 84,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2011},
month = {Mon Aug 15 00:00:00 EDT 2011}
}

Journal Article:
Free Publicly Available Full Text
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https://doi.org/10.1103/PhysRevB.84.075327

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Works referenced in this record:

The Blue Laser Diode
book, January 1997


The nature of nitrogen related point defects in common forms of InN
journal, June 2007

  • Butcher, K. S. A.; Fernandes, A. J.; Chen, P. P. -T.
  • Journal of Applied Physics, Vol. 101, Issue 12
  • DOI: 10.1063/1.2736654

Experimental evidence of different hydrogen donors in n -type InN
journal, March 2008


Shallow and Deep Level Defects in GaN
journal, January 1995


GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
journal, November 2009

  • Sztein, Alexander; Ohta, Hiroaki; Sonoda, Junichi
  • Applied Physics Express, Vol. 2, Issue 11
  • DOI: 10.1143/APEX.2.111003

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy
journal, July 2009

  • Ruffenach, S.; Moret, M.; Briot, O.
  • Applied Physics Letters, Vol. 95, Issue 4
  • DOI: 10.1063/1.3189212

Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
journal, May 2003

  • Yang, Qing; Feick, Henning; Weber, Eicke R.
  • Applied Physics Letters, Vol. 82, Issue 18
  • DOI: 10.1063/1.1570943

In-polar InN grown by plasma-assisted molecular beam epitaxy
journal, July 2006

  • Gallinat, Chad S.; Koblmüller, Gregor; Brown, Jay S.
  • Applied Physics Letters, Vol. 89, Issue 3
  • DOI: 10.1063/1.2234274

Thermoelectric properties of InxGa1−xN alloys
journal, January 2008

  • Pantha, B. N.; Dahal, R.; Li, J.
  • Applied Physics Letters, Vol. 92, Issue 4
  • DOI: 10.1063/1.2839309

Solid phase immiscibility in GaInN
journal, October 1996

  • Ho, I‐hsiu; Stringfellow, G. B.
  • Applied Physics Letters, Vol. 69, Issue 18
  • DOI: 10.1063/1.117683

Defect Donor and Acceptor in GaN
journal, September 1997


High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
journal, October 2008

  • Neufeld, Carl J.; Toledo, Nikholas G.; Cruz, Samantha C.
  • Applied Physics Letters, Vol. 93, Issue 14
  • DOI: 10.1063/1.2988894

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
journal, July 2009

  • Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S.
  • Applied Physics Letters, Vol. 95, Issue 2
  • DOI: 10.1063/1.3173202

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
journal, January 1994


Suppression of phase separation in InGaN due to elastic strain
journal, January 1998


Free electron behavior in InN: On the role of dislocations and surface electron accumulation
journal, January 2009

  • Darakchieva, V.; Hofmann, T.; Schubert, M.
  • Applied Physics Letters, Vol. 94, Issue 2
  • DOI: 10.1063/1.3065030

InGaN/GaN multiple quantum well solar cells with long operating wavelengths
journal, February 2009

  • Dahal, R.; Pantha, B.; Li, J.
  • Applied Physics Letters, Vol. 94, Issue 6
  • DOI: 10.1063/1.3081123

High mobility InN epilayers grown on AlN epilayer templates
journal, April 2008

  • Khan, N.; Sedhain, A.; Li, J.
  • Applied Physics Letters, Vol. 92, Issue 17
  • DOI: 10.1063/1.2917473

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
journal, February 2010

  • Darakchieva, V.; Lorenz, K.; Barradas, N. P.
  • Applied Physics Letters, Vol. 96, Issue 8
  • DOI: 10.1063/1.3327333

Direct hydrogen gas generation by using InGaN epilayers as working electrodes
journal, October 2008

  • Li, J.; Lin, J. Y.; Jiang, H. X.
  • Applied Physics Letters, Vol. 93, Issue 16
  • DOI: 10.1063/1.3006332

Small band gap bowing in In1−xGaxN alloys
journal, June 2002

  • Wu, J.; Walukiewicz, W.; Yu, K. M.
  • Applied Physics Letters, Vol. 80, Issue 25
  • DOI: 10.1063/1.1489481

Single phase InxGa1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition
journal, November 2008

  • Pantha, B. N.; Li, J.; Lin, J. Y.
  • Applied Physics Letters, Vol. 93, Issue 18
  • DOI: 10.1063/1.3006432

Sources of unintentional conductivity in InN
journal, January 2008

  • Janotti, Anderson; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 92, Issue 3
  • DOI: 10.1063/1.2832369

Unusual properties of the fundamental band gap of InN
journal, May 2002

  • Wu, J.; Walukiewicz, W.; Yu, K. M.
  • Applied Physics Letters, Vol. 80, Issue 21
  • DOI: 10.1063/1.1482786

Design and characterization of GaN∕InGaN solar cells
journal, September 2007

  • Jani, Omkar; Ferguson, Ian; Honsberg, Christiana
  • Applied Physics Letters, Vol. 91, Issue 13
  • DOI: 10.1063/1.2793180

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
journal, February 2002


Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
journal, October 2001

  • Moore, W. J.; Freitas, J. A.; Braga, G. C. B.
  • Applied Physics Letters, Vol. 79, Issue 16
  • DOI: 10.1063/1.1411985

Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiN x Layers
journal, December 2003

  • Huang, Wei; Yoshimoto, Masahiro; Taguchi, Kohshi
  • Japanese Journal of Applied Physics, Vol. 43, Issue 1A/B
  • DOI: 10.1143/JJAP.43.L97

Origin of the n-type conductivity of InN: The role of positively charged dislocations
journal, June 2006

  • Piper, L. F. J.; Veal, T. D.; McConville, C. F.
  • Applied Physics Letters, Vol. 88, Issue 25
  • DOI: 10.1063/1.2214156

Electrical and optical properties of p-type InGaN
journal, December 2009

  • Pantha, B. N.; Sedhain, A.; Li, J.
  • Applied Physics Letters, Vol. 95, Issue 26
  • DOI: 10.1063/1.3279149

Donor and acceptor concentrations in degenerate InN
journal, January 2002

  • Look, D. C.; Lu, H.; Schaff, W. J.
  • Applied Physics Letters, Vol. 80, Issue 2
  • DOI: 10.1063/1.1432742

Model for the thickness dependence of electron concentration in InN films
journal, October 2006

  • Cimalla, V.; Lebedev, V.; Morales, F. M.
  • Applied Physics Letters, Vol. 89, Issue 17
  • DOI: 10.1063/1.2364666

Evolution of phase separation in In-rich InGaN alloys
journal, June 2010

  • Pantha, B. N.; Li, J.; Lin, J. Y.
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3453563