Origin of background electron concentration in InxGa1-xN alloys
Abstract
The origin of high background electron concentration (n) in InxGa1-xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5. A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1100551
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 84 Journal Issue: 7; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., and Jiang, H. X.. Origin of background electron concentration in InxGa1-xN alloys. United States: N. p., 2011.
Web. doi:10.1103/PhysRevB.84.075327.
Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., & Jiang, H. X.. Origin of background electron concentration in InxGa1-xN alloys. United States. https://doi.org/10.1103/PhysRevB.84.075327
Pantha, B. N., Wang, H., Khan, N., Lin, J. Y., and Jiang, H. X.. Mon .
"Origin of background electron concentration in InxGa1-xN alloys". United States. https://doi.org/10.1103/PhysRevB.84.075327.
@article{osti_1100551,
title = {Origin of background electron concentration in InxGa1-xN alloys},
author = {Pantha, B. N. and Wang, H. and Khan, N. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {The origin of high background electron concentration (n) in InxGa1-xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5. A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN},
doi = {10.1103/PhysRevB.84.075327},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 7,
volume = 84,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2011},
month = {Mon Aug 15 00:00:00 EDT 2011}
}
https://doi.org/10.1103/PhysRevB.84.075327
Web of Science
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