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Title: Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1098853
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 108 Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zhu, Xuetao, Santos, L., Howard, C., Sankar, R., Chou, F. C., Chamon, C., and El-Batanouny, M. Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.108.185501.
Zhu, Xuetao, Santos, L., Howard, C., Sankar, R., Chou, F. C., Chamon, C., & El-Batanouny, M. Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements. United States. https://doi.org/10.1103/PhysRevLett.108.185501
Zhu, Xuetao, Santos, L., Howard, C., Sankar, R., Chou, F. C., Chamon, C., and El-Batanouny, M. Thu . "Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements". United States. https://doi.org/10.1103/PhysRevLett.108.185501.
@article{osti_1098853,
title = {Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements},
author = {Zhu, Xuetao and Santos, L. and Howard, C. and Sankar, R. and Chou, F. C. and Chamon, C. and El-Batanouny, M.},
abstractNote = {},
doi = {10.1103/PhysRevLett.108.185501},
journal = {Physical Review Letters},
number = 18,
volume = 108,
place = {United States},
year = {Thu May 03 00:00:00 EDT 2012},
month = {Thu May 03 00:00:00 EDT 2012}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.108.185501

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Cited by: 110 works
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