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Title: Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1098628
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 85; Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English