Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1098327
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 23; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Schleife, André, Rödl, Claudia, Fuchs, Frank, Hannewald, Karsten, and Bechstedt, Friedhelm. Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?. United States: N. p., 2011.
Web. doi:10.1103/PhysRevLett.107.236405.
Schleife, André, Rödl, Claudia, Fuchs, Frank, Hannewald, Karsten, & Bechstedt, Friedhelm. Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?. United States. https://doi.org/10.1103/PhysRevLett.107.236405
Schleife, André, Rödl, Claudia, Fuchs, Frank, Hannewald, Karsten, and Bechstedt, Friedhelm. Wed .
"Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?". United States. https://doi.org/10.1103/PhysRevLett.107.236405.
@article{osti_1098327,
title = {Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?},
author = {Schleife, André and Rödl, Claudia and Fuchs, Frank and Hannewald, Karsten and Bechstedt, Friedhelm},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.236405},
journal = {Physical Review Letters},
number = 23,
volume = 107,
place = {United States},
year = {Wed Nov 30 00:00:00 EST 2011},
month = {Wed Nov 30 00:00:00 EST 2011}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.107.236405
https://doi.org/10.1103/PhysRevLett.107.236405
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Cited by: 49 works
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