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We encourage you to perform a real-time search of NLEBeta
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1

Ternary ceramic alloys of Zr-Ce-Hf oxides  

DOE Patents [OSTI]

A ternary ceramic alloy is described which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce[sub x]Hf[sub y]Zr[sub 1[minus]x[minus]y]O[sub 2], is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites. 1 fig.

Becher, P.F.; Funkenbusch, E.F.

1990-11-20T23:59:59.000Z

2

ACCEPTED MANUSCRIPT The behaviour of Rare-Earth Elements, Zr and Hf during biologically-mediated  

E-Print Network [OSTI]

ACCEPTED MANUSCRIPT ACCEPTED MANUSCRIPT 1 The behaviour of Rare-Earth Elements, Zr and Hf during.a,b* , Cangemi M.a , Brusca L.c , Madonia P.c , Saiano F.d , Zuddas P.e a) Department of Earth and Marine at the solid-liquid interface influencing the distribution of trace elements onto microbial surfaces. Since

3

Ternary ceramic alloys of ZR-CE-HF oxides  

DOE Patents [OSTI]

A ternary ceramic alloy which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce.sub.x Hf.sub.y Zn.sub.1-x-y O.sub.2, is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites.

Becher, Paul F. (Oak Ridge, TN); Funkenbusch, Eric F. (White Bear Lake, MN)

1990-01-01T23:59:59.000Z

4

First-principles phase diagram calculations for the HfCTiC, ZrCTiC, and HfCZrC solid O. Adjaoud,1,*,  

E-Print Network [OSTI]

Transition metal carbides, including the NaCl-structured group IV Ti, Zr, and Hf carbides, have extremely of oxidizing agents, and retain good corrosion resistance to high temperature.1,5,6 The transition-metal high melting points and are therefore referred to collectively as the "refractory carbides

Steinle-Neumann, Gerd

5

A new class of materials with promising thermoelectric properties: MNiSn (M=Ti, Zr, Hf)  

SciTech Connect (OSTI)

TiNiSn, ZrNiSn and HfNiSn are members of a large group of intermetallic compounds which crystallize in the cubic MgAgAs-type structure. Polycrystalline samples of these compounds have been prepared and investigated for their thermoelectric properties. With thermopowers of about {minus}200 {micro}V/K and resistivities of a few m{Omega}cm, power factors S{sup 2}/{rho} as high as 38 {micro}W/K{sup 2}cm were obtained at 700 K. These remarkably high power factors are, however, accompanied by a thermal conductivity, solid solutions Zr{sub 1{minus}x}Hf{sub x}NiSn, Zr{sub 1{minus}x}Ti{sub x}NiSn, and Hf{prime}{sub 1{minus}x}Ti{sub x}NiSn were formed. The figure of merit of Zr{sub 0.5}Hf{sub 0.5}NiSn at 700 K (ZT = 0.41) exceeds the end members ZrNiSn (ZT = 0.26) and HfNiSn (ZT = 0.22).

Hohl, H.; Ramirez, A.P.; Kaefer, W.; Fess, K.; Thurner, Ch.; Kloc, Ch.; Bucher, E.

1997-07-01T23:59:59.000Z

6

13.21 Geochemistry of the Rare-Earth Element, Nb, Ta, Hf, and Zr Deposits RL Linnen, University of Western Ontario, London, ON, Canada  

E-Print Network [OSTI]

13.21 Geochemistry of the Rare-Earth Element, Nb, Ta, Hf, and Zr Deposits RL Linnen, University to Y, the rare- earth elements (REE, La to Lu), Zr, Hf, Nb, and Ta. The rare elements, Canada ĂŁ 2014 Elsevier Ltd. All rights reserved. 13.21.1 Introduction 543 13.21.1.1 Uses of Rare Elements

Chakhmouradian, Anton

7

Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}  

SciTech Connect (OSTI)

The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as candidates for thermoelectric applications.

Tritt, T.M.; Wilson, M.L.; Littleton, R.L. [and others

1997-07-01T23:59:59.000Z

8

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack  

SciTech Connect (OSTI)

Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

Lin, Chi-Chou; Kuo, Yue [Thin Film Nano and Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, Texas 77843-3122 (United States)

2014-02-28T23:59:59.000Z

9

Microstructural Characterization and Shape Memory Response of Ni-Rich NiTiHf and NiTiZr High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

NiTiHf and NiTiZr high temperature shape memory alloys (HTSMAs) have drawn a great deal of attention as cheaper alternatives to Pt, Pd and Au alloyed NiTi-based HTSMAs while NiTiZr alloys also providing at least 20% weight reduction then its Ni...

Evirgen, Alper

2014-08-14T23:59:59.000Z

10

Local elastic modulus of RF sputtered HfO{sub 2} thin film by atomic force acoustic microscopy  

SciTech Connect (OSTI)

Atomic force acoustic microscopy (AFAM) is a useful nondestructive technique for measurement of local elastic modulus of materials at nano-scale spatial resolution by measuring the contact resonance spectra for higher order modes of the AFM cantilever. The elastic modulus of RF sputtered HfO{sub 2} thin film has been measured quantitatively, using reference approach in which measurements are performed on the test and reference samples. Using AFAM, the measured elastic modulus of the HfO{sub 2} thin film is 223±27 GPa, which is in agreement with the literature value of 220±40 GPa for atomic layer deposited HfO{sub 2} thin film using nanoindentation technique.

Jena, S., E-mail: shuvendujena9@gmail.com; Tokas, R. B., E-mail: shuvendujena9@gmail.com; Sarkar, P., E-mail: shuvendujena9@gmail.com; Thakur, S.; Sahoo, N. K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400 085 (India); Misal, J. S.; Rao, K. D. [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam-530 012 (India)

2014-04-24T23:59:59.000Z

11

Two-Dimensional Polaronic Behavior in the Binary Oxides m-HfO2 and m-ZrO2  

SciTech Connect (OSTI)

We demonstrate that the three-dimensional (3D) binary monoclinic oxides HfO{sub 2} and ZrO{sub 2} exhibit quasi-2D polaron localization and conductivity, which results from a small difference in the coordination of two oxygen sublattices in these materials. The transition between a 2D large polaron into a zero-dimensional small polaron state requires overcoming a small energetic barrier. These results demonstrate how a small asymmetry in the lattice structure can determine the qualitative character of polaron localization and significantly broaden the realm of quasi-2D polaron systems.

McKenna, K. P.; Wolf, M. J.; Shluger, A. L.; Lany, S.; Zunger, A.

2012-03-16T23:59:59.000Z

12

Electron-stimulated desorption from polished and vacuum fired 316LN stainless steel coated with Ti-Zr-Hf-V  

SciTech Connect (OSTI)

In this study, two identical 316LN stainless steel tubular samples, which had previously been polished and vacuum-fired and then used for the electron-stimulated desorption (ESD) experiments, were coated with Ti-Zr-Hf-V with different morphologies: columnar and dense. ESD measurement results after nonevaporable getter (NEG) activation to 150, 180, 250, and 350?°C indicated that the values for the ESD yields are significantly (2–20 times) lower than the data from our previous study with similar coatings on nonvacuum-fired samples. Based on these results, the lowest pressure and best long-term performance in particle accelerators will be achieved with a vacuum-fired vacuum chamber coated with dense Ti-Zr-Hf-V coating activated at 180?°C. This is likely due to the following facts: after NEG activation, the hydrogen concentration inside the NEG was lower than in the bulk stainless steel substrate; the NEG coating created a barrier for gas diffusion from the sample bulk to vacuum; the dense NEG coating performed better as a barrier than the columnar NEG coating.

Malyshev, Oleg B., E-mail: oleg.malyshev@stfc.ac.uk; Valizadeh, Reza; Hogan, Benjamin T.; Hannah, Adrian N. [ASTeC, STFC Daresbury Laboratory, Daresbury, Warrington, WA4 4AD Cheshire (United Kingdom)

2014-11-01T23:59:59.000Z

13

First principle study of elastic and thermodynamic properties of ZrZn{sub 2} and HfZn{sub 2} under high pressure  

SciTech Connect (OSTI)

A comprehensive investigation of the structural, elastic, and thermodynamic properties for Laves-phases ZrZn{sub 2} and HfZn{sub 2} are conducted using density functional total energy calculations combined with the quasi-harmonic Debye model. The optimized lattice parameters of ZrZn{sub 2} and HfZn{sub 2} compare well with available experimental values. We estimated the mechanical behaviors of both compounds under compression, including mechanical stability, Young's modulus, Poisson's ratio, ductility, and anisotropy. Additionally, the thermodynamic properties as a function of pressure and temperature are analyzed and found to be in good agreement with the corresponding experimental data.

Sun, Na; Zhang, Xinyu, E-mail: jiaqianqin@gmail.com; Ning, Jinliang; Zhang, Suhong; Liang, Shunxing; Ma, Mingzhen; Liu, Riping [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Qin, Jiaqian, E-mail: jiaqianqin@gmail.com [Metallurgy and Materials Science Research Institute, Chulalongkorn University, Bangkok 10330 (Thailand)

2014-02-28T23:59:59.000Z

14

Thermal stability of Al- and Zr-doped HfO{sub 2} thin films grown by direct current magnetron sputtering  

SciTech Connect (OSTI)

Ultrathin HfO{sub 2} dielectric films doped with Al and Zr were grown on p-type Si(100) substrates by dc magnetron sputtering, and their microstructural and electrical properties were examined. Compositions and chemical states of the dielectric films were analyzed by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The HfO{sub 2} films doped with Zr were crystallized even from the as-deposited state, however, the crystallization temperature of the HfO{sub 2} film doped with 16% Al{sub 2}O{sub 3} was delayed up to 900 deg. C. As the annealing temperature increases, high-resolution transmission electron microscopy analyses of all doped HfO{sub 2} films showed an increase of the interfacial layer thickness due to the diffusion of small partial pressure of oxygen in annealing ambient. Our results also showed that the addition of Al{sub 2}O{sub 3} to 14% is not useful for blocking the oxygen diffusion through the (HfO{sub 2}){sub 0.86}(Al{sub 2}O{sub 3}){sub 0.14} film. From the capacitance-voltage measurements, the dielectric constants of the Al- and Zr-doped HfO{sub 2} thin films were measured to be 18.7 and 7.6, respectively.

Hong, Yeong-Eui; Kim, Yong-Seok; Do, Kihoon; Lee, Dongwon; Ko, Dae-Hong; Ku, Ja-Hum; Kim, Hyoungsub [Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemoon-Ku, Seoul 120-749 (Korea, Republic of); Semiconductor R and D Division, Samsung Electronics Co, Ltd., San no. 24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711 (Korea, Republic of); Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Ku, Suwon 440-746 (Korea, Republic of)

2005-09-15T23:59:59.000Z

15

Optical spectroscopic study of the SiN/HfO{sub 2} interfacial formation during rf sputtering of HfO{sub 2}  

SciTech Connect (OSTI)

High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO{sub 2} in either O{sub 2} or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO{sub 2} growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO{sub 2} film in O{sub 2} atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O{sub 2}. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.

Toledano-Luque, M.; Lucia, M. L.; Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Ciudad Universitaria, E-28040 Madrid (Spain)

2007-11-05T23:59:59.000Z

16

Thermal and electronic charge transport in bulk nanostructured Zr{sub 0.25}Hf{sub 0.75}NiSn composites with full-Heusler inclusions  

SciTech Connect (OSTI)

Bulk Zr{sub 0.25}Hf{sub 075}NiSn half-Heusler (HH) nanocomposites containing various mole fractions of full-Heusler (FH) inclusions were prepared by solid state reaction of pre-synthesized HH alloy with elemental Ni at 1073 K. The microstructures of spark plasma sintered specimens of the HH/FH nanocomposites were investigated using transmission electron microscopy and their thermoelectric properties were measured from 300 K to 775 K. The formation of coherent FH inclusions into the HH matrix arises from solid-state Ni diffusion into vacant sites of the HH structure. HH(1-y)/FH(y) composites with mole fraction of FH inclusions below the percolation threshold, y{approx}0.2, show increased electrical conductivity, reduced Seebeck coefficient and increased total thermal conductivity arising from gradual increase in the carrier concentration for composites. A drastic reduction ({approx}55%) in {kappa}{sub l} was observed for the composite with y=0.6 and is attributed to enhanced phonon scattering due to mass fluctuations between FH and HH, and high density of HH/FH interfaces. - Graphical abstract: Large reduction in the lattice thermal conductivity of bulk nanostructured half-Heusler/full-Heusler (Zr{sub 0.25}Hf{sub 075}NiSn/ Zr{sub 0.25}Hf{sub 075}Ni{sub 2}Sn) composites, obtained by solid-state diffusion at 1073 K of elemental Ni into vacant sites of the half-Heusler structure, arising from the formation of regions of spinodally decomposed HH and FH phases with a spatial composition modulation of {approx}2 nm. Highlights: > Bulk composites from solid state transformation of half-Heusler matrix through Ni diffusion. > Formation of coherent phase boundaries between half-Heusler matrix and full-Heusler inclusion. > Alteration of thermal and electronic transports with increasing full-Heusler inclusion. > Enhanced phonon scattering at half-Heusler/ full-Heusler phase boundaries.

Makongo, Julien P.A.; Misra, Dinesh K. [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Salvador, James R. [Chemical Sciences and Materials Systems Laboratory, General Motors R and D Center, Warren, MI 48090 (United States); Takas, Nathan J. [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Wang, Guoyu [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Shabetai, Michael R.; Pant, Aditya; Paudel, Pravin [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Stokes, Kevin L. [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Department of Physics, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States)

2011-11-15T23:59:59.000Z

17

Exploration of R2XM2 (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge): Structural Motifs, the novel Compound Gd2AlGe2 and Analysis of the U3Si2 and Zr3Al2 Structure Types  

SciTech Connect (OSTI)

In the process of exploring and understanding the influence of crystal structure on the system of compounds with the composition Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} several new compounds were synthesized with different crystal structures, but similar structural features. In Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4}, the main feature of interest is the magnetocaloric effect (MCE), which allows the material to be useful in magnetic refrigeration applications. The MCE is based on the magnetic interactions of the Gd atoms in the crystal structure, which varies with x (the amount of Si in the compound). The crystal structure of Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} can be thought of as being formed from two 3{sup 2}434 nets of Gd atoms, with additional Gd atoms in the cubic voids and Si/Ge atoms in the trigonal prismatic voids. Attempts were made to substitute nonmagnetic atoms for magnetic Gd using In, Mg and Al. Gd{sub 2}MgGe{sub 2} and Gd{sub 2}InGe{sub 2} both possess the same 3{sup 2}434 nets of Gd atoms as Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4}, but these nets are connected differently, forming the Mo{sub 2}FeB{sub 2} crystal structure. A search of the literature revealed that compounds with the composition R{sub 2}XM{sub 2} (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge) crystallize in one of four crystal structures: the Mo{sub 2}FeB{sub 2}, Zr{sub 3}Al{sub 2}, Mn{sub 2}AlB{sub 2} and W{sub 2}CoB{sub 2} crystal structures. These crystal structures are described, and the relationships between them are highlighted. Gd{sub 2}AlGe{sub 2} forms an entirely new crystal structure, and the details of its synthesis and characterization are given. Electronic structure calculations are performed to understand the nature of bonding in this compound and how electrons can be accounted for. A series of electronic structure calculations were performed on models with the U{sub 3}Si{sub 2} and Zr{sub 3}Al{sub 2} structures, using Zr and A1 as the building blocks. The starting point for these models was the U{sub 3}Si{sub 2} structure, and models were created to simulate the transition from the idealized U{sub 3}Si{sub 2} structure to the distorted Zr{sub 3}Al{sub 2} structure. Analysis of the band structures of the models has shown that the transition from the U{sub 3}Si{sub 2} structure to the Zr{sub 3}Al{sub 2} structure lifts degeneracies along the {Lambda} {yields} Z direction, indicating a Peierls-type mechanism for the displacement occurring in the positions of the Zr atoms.

Sean William McWhorter

2006-05-01T23:59:59.000Z

18

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target  

SciTech Connect (OSTI)

Hafnium oxide (HfO?) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO? ceramic target has been employed for sputtering while varying the Ts from room temperature to 500?C during deposition. The effect of Ts on the growth and microstructure of deposited HfO? films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO? films. Structural characterization indicates that the HfO? films grown at Ts<200 ?C are amorphous while films grown at Ts>200 ?C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ?C. Nanocrystalline HfO? films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO? films. An interface layer (IL) formation occurs due to reaction at the HfO?-Si interface for HfO? films deposited at Ts>200 ?C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO?-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.

Aguirre, B.; Vemuri, R. S.; Zubia, David; Engelhard, Mark H.; Shutthanandan, V.; Kamala Bharathi, K.; Ramana, Chintalapalle V.

2011-01-01T23:59:59.000Z

19

Hf-irJ  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofofOxford SiteToledo SiteTonawanda North - ConsequencesDGwen Hf-irJ

20

Recycler barrier RF buckets  

SciTech Connect (OSTI)

The Recycler Ring at Fermilab uses a barrier rf systems for all of its rf manipulations. In this paper, I will give an overview of historical perspective on barrier rf system, the longitudinal beam dynamics issues, aspects of rf linearization to produce long flat bunches and methods used for emittance measurements of the beam in the RR barrier rf buckets. Current rf manipulation schemes used for antiproton beam stacking and longitudinal momentum mining of the RR beam for the Tevatron collider operation are explained along with their importance in spectacular success of the Tevatron luminosity performance.

Bhat, C.M.; /Fermilab

2011-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Superconducting RF Cryomodule Demagnetization  

E-Print Network [OSTI]

This note presents measurements that support the proposition that it is feasible to demagnetize a fully assembled superconducting RF cryomodule.

Crawford, Anthony C

2015-01-01T23:59:59.000Z

22

Phase selection and transition in Hf-rich hafnia-titania nanolaminates  

SciTech Connect (OSTI)

Hf-rich hafnia-titania nanolaminate films with five HfO{sub 2}-TiO{sub 2} bilayer architectures (0.64 to 0.94 Hf atom fraction) were sputter deposited on unheated fused silica substrates, annealed post-deposition from 573 to 1273 K, and analyzed by x-ray diffraction to study phase selection and transition. Isochronal annealing for 1 h intervals from 573 to 1173 K produces weak crystallization into monoclinic (m) HfO{sub 2} doped with Ti, i.e., m-Hf{sub 1-x}Ti{sub x}O{sub 2}. The amount of Ti incorporated into m-HfO{sub 2} depends upon both architecture and overall stoichiometry, but in all but the coarsest architecture, exceeds the bulk solubility limit of x = 0.05. Initial annealing at 1273 K produces significant crystallization into a biphasic structure, m-Hf{sub 1-x}Ti{sub x}O{sub 2} and orthorhombic (o) HfTiO{sub 4}. From bulk phase equilibrium considerations, o-HfTiO{sub 4} is expected to crystallize under conditions of interfacial bilayer mixing. However, upon further annealing at 1273 K, o-HfTiO{sub 4} proves to be unstable. o-HfTiO{sub 4} demixing inevitably occurs independent of architecture and stoichiometry, resulting in final crystallization products after 96 h at 1273 K that are m-Hf{sub 1-x}Ti{sub x}O{sub 2} with x {approx_equal} 0.05 and TiO{sub 2} doped with Hf. We suggest that o-HfTiO{sub 4} instability arises from a driving force to form domains similar to those found in the low temperature in/commensurate structures of ZrTiO{sub 4}. A detailed crystallographic group-subgroup analysis of the o (Pbcn) {yields} m (P2{sub 1}/c) transition shows that these domains can be represented by an orientation twin in the latter structure and their creation can be achieved by a single step second-order phase transition.

Cisneros-Morales, Massiel Cristina; Rubin Aita, Carolyn

2011-06-15T23:59:59.000Z

23

Characterization of Ceramic Plasma-Sprayed Coatings, and Interaction Studies Between U-Zr Fuel and Ceramic Coated Interface at an Elevated Temperature  

SciTech Connect (OSTI)

Candidate coating materials for re-usable metallic nuclear fuel crucibles, HfN, TiC, ZrC, and Y2O3, were plasma-sprayed onto niobium substrates. The coating microstructure and the thermal cycling behavior were characterized, and U-Zr melt interaction studies carried out. The Y2O3 coating layer had a uniform thickness and was well consolidated with a few small pores scattered throughout. While the HfN coating was not well consolidated with a considerable amount of porosity, but showed somewhat uniform thickness. Thermal cycling tests on the HfN, TiC, ZrC, and Y2O3 coatings showed good cycling characteristics with no interconnected cracks forming even after 20 cycles. Interaction studies done on the coated samples by dipping into a U-20wt.%Zr melt indicated that HfN and Y2O3 did not form significant reaction layers between the melt and the coating while the TiC and the ZrC coatings were significantly degraded. Y2O3 exhibited the most promising performance among HfN, TiC, ZrC, and Y2O3 coatings.

Ki Hwan Kim; Chong Tak Lee; R. S. Fielding; J. R. Kennedy

2011-08-01T23:59:59.000Z

24

Rf Feedback free electron laser  

DOE Patents [OSTI]

A free electron laser system and electron beam system for a free electron laser which use rf feedback to enhance efficiency. Rf energy is extracted from an electron beam by decelerating cavities and returned to accelerating cavities using rf returns such as rf waveguides, rf feedthroughs, etc. This rf energy is added to rf klystron energy to lower the required input energy and thereby enhance energy efficiency of the system.

Brau, Charles A. (Los Alamos, NM); Swenson, Donald A. (Los Alamos, NM); Boyd, Jr., Thomas J. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

25

Magnetic properties of HITPERM ,,Fe,Co...88Zr7B4Cu1 magnets M. A. Willard,a)  

E-Print Network [OSTI]

power applications requires new bulk soft magnetic materials that 1 are capable of operating at higher magnetization that persists to the phase transformation at 980 °C. Alternating current permeability experiments nanocrystalline Fe­Si­B­Nb­Cu alloys and nanocrystalline Fe­M­B­Cu M Zr, Nb, Hf, etc. alloys have been optimized

Laughlin, David E.

26

Can RF help CMOS processors?  

E-Print Network [OSTI]

FOR C OMMUNICATIONS Can RF Help CMOS Processors? Eran SocherRF communication can help increase the wired communicationaluminum and low-K dielectrics help reduce wire delay but do

Socher, Eran; Chang, Mau-Chung Frank

2007-01-01T23:59:59.000Z

27

RF test bench automation Description  

E-Print Network [OSTI]

RF test bench automation Description: Callisto would like to implement automated RF test bench. Three RF test benches have to be studied and automated: LNA noise temperature test bench LNA gain phase of the test benches and an implementation of the automation phase. Tasks: Noise temperature

Dobigeon, Nicolas

28

RF power generation  

E-Print Network [OSTI]

This paper reviews the main types of r.f. power amplifiers which are, or may be, used for particle accelerators. It covers solid-state devices, tetrodes, inductive output tubes, klystrons, magnetrons, and gyrotrons with power outputs greater than 10 kW c.w. or 100 kW pulsed at frequencies from 50 MHz to 30 GHz. Factors affecting the satisfactory operation of amplifiers include cooling, matching and protection circuits are discussed. The paper concludes with a summary of the state of the art for the different technologies.

Carter, R G

2011-01-01T23:59:59.000Z

29

Metal-Organic Frameworks Based on Previously Unknown Zr8/Hf Cubic  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Regionat Cornell Batteries & Fuel Cells In ThisMetal

30

Acidizing of Sandstone Reservoirs Using HF and Organic Acids  

E-Print Network [OSTI]

Mud acid, which is composed of HCl and HF, is commonly used to remove the formation damage in sandstone reservoirs. However, many problems are associated with HCl, especially at high temperatures. Formic-HF acids have served as an alternative...

Yang, Fei

2012-10-19T23:59:59.000Z

31

Unbalanced field RF electron gun  

DOE Patents [OSTI]

A design for an RF electron gun having a gun cavity utilizing an unbalanced electric field arrangement. Essentially, the electric field in the first (partial) cell has higher field strength than the electric field in the second (full) cell of the electron gun. The accompanying method discloses the use of the unbalanced field arrangement in the operation of an RF electron gun in order to accelerate an electron beam.

Hofler, Alicia

2013-11-12T23:59:59.000Z

32

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-{kappa} silicates  

SciTech Connect (OSTI)

Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO{sub 2} and HfO{sub 2} phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 {+-} 0.4) x 10{sup 17} Si-ncs/cm{sup 3}, respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-{kappa} dielectrics with embedded Si nanoclusters.

Talbot, E.; Roussel, M.; Genevois, C.; Pareige, P. [Groupe de Physique des Materiaux (GPM), Universite et INSA de Rouen, UMR CNRS 6634, Av. de l'Universite, BP 12, 76801 Saint Etienne du Rouvray (France); Khomenkova, L.; Portier, X.; Gourbilleau, F. [Centre de Recherche sur les Ions, les Materiaux et la Photonique (CIMAP), CEA/CNRS/ENSICAEN/UCBN, 6 Bd. Marechal Juin, 14050 Caen Cedex 4 (France)

2012-05-15T23:59:59.000Z

33

Phase transformations in Cu-Zr multilayers  

SciTech Connect (OSTI)

A study of phase transformations is reported for Cu-rich, Cu-Zr multilayer foils synthesized using magnetron sputter deposition and annealed using a differential scanning calorimeter. The foils range in composition from 1.6 to 9.0 at% Zr and consist of alternate layers of polycrystalline Cu and Zr. Differential scanning calorimetry, X-ray analysis and electron microscopy were used to three distinct reactions in the foils: a mixing and an amorphization of the Cu and die Zr, a crystallization on of this amorphous phase to the metastable intermetallic Cu{sub 5l}Zr{sub l4}, and a transformation of the Cu{sub 5l}Zr{sub l4} phase into the equilibrium phase Cu{sub 9}Zr{sub 2}. The as-deposited layering remained stable during the first two reactions and then broke down in the third reaction as large grains of Cu{sub 9}Zr{sub 2} encompassed the smaller Cu grains. Heats of the reactions and activation energies of these reactions are measured and are compared to values reported for bulk samples. The measured heats provide evidence that amorphous Cu-Zr alloys phase separate and that mixing and short range ordering produce 3.5 times more heat than long range ordering produces when Ca and Zr react and form Cu{sub 5l}Zr{sub l4}.

Weihs, T.P.; Barbee, T.W. Jr.; Wall, M.A.

1993-04-01T23:59:59.000Z

34

Cryogenic vacuumm RF feedthrough device  

DOE Patents [OSTI]

A cryogenic vacuum rf feedthrough device comprising: 1) a probe for insertion into a particle beam; 2) a coaxial cable comprising an inner conductor and an outer conductor, a dielectric/insulating layer surrounding the inner conductor, the latter being connected to the probe for the transmission of higher mode rf energy from the probe; and 3) a high thermal conductivity stub attached to the coaxial dielectric about and in thermal contact with the inner conductor which high thermal conductivity stub transmits heat generated in the vicinity of the probe efficiently and radially from the area of the probe and inner conductor all while maintaining useful rf transmission line characteristics between the inner and outer coaxial conductors.

Wu, Genfa (Yorktown, VA); Phillips, Harry Lawrence (Hayes, VA)

2008-12-30T23:59:59.000Z

35

Note on RF Photo-Cathode Gun  

E-Print Network [OSTI]

Emittances in Laser-Driven RF Guns", Proc. 1988 Linear Acc.Palmer, "Preliminary Study of Gun Emittance Correction", BNLLaser-Driven RF Electron Guns", Nuc1. ln stt. Meth. , A275,

Kim, Kwang-Je

2010-01-01T23:59:59.000Z

36

Intelligent Radio Frequency (RF) Monitoring  

E-Print Network [OSTI]

? Intelligent Radio Frequency (RF) Monitoring ? 2009 Armstrong International, Inc. www.armstronginternational.com 2 ?Expect many enjoyable experiences!? David M. Armstrong Present Process Challenges ? Identifying a failure ? Procedure.... Armstrong Steam Trap Challenges ? Identifying a failure ? Manpower ? Location ? Magnitude of failure ? Energy loss ? Loss of heat transfer ? Justification for repair ? ?Speed of Implementation? ? Environmental concerns Manpower Location 4...

Kimbrough, B.

37

SPL RF Coupler Cooling Efficiency  

E-Print Network [OSTI]

Energy saving is an important challenge in accelerator design. In this framework, reduction of heat loads in a cryomodule is of fundamental importance due to the small thermodynamic efficiency of cooling at low temperatures. In particular, care must be taken during the design of its critical components (e.g. RF couplers, coldwarm transitions). In this framework, the main RF coupler of the Superconducting Proton Linac (SPL) cryomodule at CERN will not only be used for RF powering but also as the main mechanical support of the superconducting cavities. These two functions have to be accomplished while ensuring the lowest heat in-leak to the helium bath at 2 K. In the SPL design, the RF coupler outer conductor is composed of two walls and cooled by forced convection with helium gas at 4.5 K. Analytical, semi-analytical and numerical analyses are presented in order to defend the choice of gas cooling. Temperature profiles and thermal performance have been evaluated for different operating conditions; a sensitivit...

Bonomi, R; Montesinos, E; Parma, V; Vande Craen, A

2014-01-01T23:59:59.000Z

38

High-Power Rf Load  

DOE Patents [OSTI]

A compact high-power RF load comprises a series of very low Q resonators, or chokes [16], in a circular waveguide [10]. The sequence of chokes absorb the RF power gradually in a short distance while keeping the bandwidth relatively wide. A polarizer [12] at the input end of the load is provided to convert incoming TE.sub.10 mode signals to circularly polarized TE.sub.11 mode signals. Because the load operates in the circularly polarized mode, the energy is uniformly and efficiently absorbed and the load is more compact than a rectangular load. Using these techniques, a load having a bandwidth of 500 MHz can be produced with an average power dissipation level of 1.5 kW at X-band, and a peak power dissipation of 100 MW. The load can be made from common lossy materials, such as stainless steel, and is less than 15 cm in length. These techniques can also produce loads for use as an alternative to ordinary waveguide loads in small and medium RF accelerators, in radar systems, and in other microwave applications. The design is easily scalable to other RF frequencies and adaptable to the use of other lossy materials.

Tantawi, Sami G. (San Mateo, CA); Vlieks, Arnold E. (Livermore, CA)

1998-09-01T23:59:59.000Z

39

Josephson device with a matched rf source  

SciTech Connect (OSTI)

Analog simulation of a resistance-shunted ac Josephson junction coupled to an rf source with matching impedance reveals (1) added structure in the device's V-I curve even when the source is quiescent and (2) rf-induced steps with peak amplitudes between those produced by voltage and current rf sources. Both results are consistent with experimental data.

Longacre, A. Jr.

1980-03-01T23:59:59.000Z

40

HF separation in a carbonylation process  

SciTech Connect (OSTI)

This patent describes the carbonylation of an olefin with carbon monoxide in the presence of hydrogen fluoride catalyst wherein the reaction product is treated with water to produce a mixture of a carboxylic acid, HF and optionally water. The improvement comprises contacting at a temperature in the range of from about 25/sup 0/C up to about 100/sup 0/C, the mixture with one side of a cation permeable membrane of a copolymer of tetrafluoro ethylene and perfluoro-3, 6-dioxa-4-methyl-octen sulfamic acid whose other side is in contact with water.

Grote, D.; Trivedi, B.C.; Mason, T.O.

1987-04-28T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

E-Print Network 3.0 - al hf ta Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO2 films, significant... shift than HfO2 3. In this work, we developed HfTaO gate ......

42

DEPARTMENT OF CHEMICAL ENGINEERING Name of SOP Manual Hydrofluoric Acid (HF) Etching of Glass  

E-Print Network [OSTI]

required Fume Hood, safety eye goggles, lab coat, two layers of nitrile gloves and HF Safety Kit Sequential containers. 5. HF is a glass etchant; only use plastic labware to contain HF. 6. Personal protective gear

Thompson, Michael

43

Low jitter RF distribution system  

DOE Patents [OSTI]

A timing signal distribution system includes an optical frequency stabilized laser signal amplitude modulated at an rf frequency. A transmitter box transmits a first portion of the laser signal and receive a modified optical signal, and outputs a second portion of the laser signal and a portion of the modified optical signal. A first optical fiber carries the first laser signal portion and the modified optical signal, and a second optical fiber carries the second portion of the laser signal and the returned modified optical signal. A receiver box receives the first laser signal portion, shifts the frequency of the first laser signal portion outputs the modified optical signal, and outputs an electrical signal on the basis of the laser signal. A detector at the end of the second optical fiber outputs a signal based on the modified optical signal. An optical delay sensing circuit outputs a data signal based on the detected modified optical signal. An rf phase detect and correct signal circuit outputs a signal corresponding to a phase stabilized rf signal based on the data signal and the frequency received from the receiver box.

Wilcox, Russell; Doolittle, Lawrence; Huang, Gang

2012-09-18T23:59:59.000Z

44

Feedback control of HfO{sub 2} etch processing in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas  

SciTech Connect (OSTI)

The etch rate of HfO{sub 2} etch processing has been feedback controlled in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas. The ion current and the root mean square rf voltage on the wafer stage, which are measured using a commercial impedance meter connected to the wafer stage, are chosen as controlled variables because the positive-ion flux and ion energy incident upon the wafer surface are the key factors that determine the etch rate. Two 13.56 MHz rf generators are used to adjust the inductively coupled plasma power and bias power which control ion density and ion energy, respectively. The adopted HfO{sub 2} etch processing used rather low rf voltage. The ion-current value obtained by the power/voltage method is underestimated, so the neural-network model was developed to assist estimating the correct ion-current value. The experimental results show that the etch-rate variation of the closed-loop control is smaller than that of the open-loop control. However, the first wafer effect cannot be eliminated using closed-loop control and thus to achieve a constant etch rate, the chamber-conditioning procedure is required in this etch processing.

Lin Chaung; Leou, K.-C.; Li, T.-C.; Lee, L.-S.; Tzeng, P.-J. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Electronic Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan 310 (China)

2008-09-15T23:59:59.000Z

45

Single electron beam rf feedback free electron laser  

DOE Patents [OSTI]

A free electron laser system and electron beam system for a free electron laser which uses rf feedback to enhance efficiency are described. Rf energy is extracted from a single electron beam by decelerating cavities and energy is returned to accelerating cavities using rf returns, such as rf waveguides, rf feedthroughs, resonant feedthroughs, etc. This rf energy is added to rf klystron energy to reduce the required input energy and thereby enhance energy efficiency of the system.

Brau, C.A.; Stein, W.E.; Rockwood, S.D.

1981-02-11T23:59:59.000Z

46

Hf propagation through actively modified ionospheres  

SciTech Connect (OSTI)

We have developed a computer modeling capability to predict the effect of localized electron density perturbations created by chemical releases or high-power radio frequency heating upon oblique, one-hop hf propagation paths. We have included 3-d deterministic descriptions of the depleted or enhanced ionization, including formation, evolution, and drift. We have developed a homing ray trace code to calculate the path of energy propagation through the modified ionosphere in order to predict multipath effects. We also consider the effect of random index of refraction variations using a formalism to calculate the mutual coherence functions for spatial and frequency separations based upon a path integral solution of the parabolic wave equation for a single refracted path through an ionosphere which contains random electron density fluctuations. 5 refs., 8 figs.

Argo, P.E.; Fitzgerald, T.J.; Wolcott, J.H.; Simons, D.J. (Los Alamos National Lab., NM (USA)); Warshaw, S.; Carlson, R. (Lawrence Livermore National Lab., CA (USA))

1990-01-01T23:59:59.000Z

47

RF/optical shared aperture for high availability wideband communication RF/FSO links  

DOE Patents [OSTI]

An RF/Optical shared aperture is capable of transmitting and receiving optical signals and RF signals simultaneously. This technology enables compact wide bandwidth communications systems with 100% availability in clear air turbulence, rain and fog. The functions of an optical telescope and an RF reflector antenna are combined into a single compact package by installing an RF feed at either of the focal points of a modified Gregorian telescope.

Ruggiero, Anthony J; Pao, Hsueh-yuan; Sargis, Paul

2014-04-29T23:59:59.000Z

48

RF-SPUTTERED ITO AND ITO:Zr STUDIED BY IN SITU SPECTROSCOPIC ELLIPSOMETRY  

E-Print Network [OSTI]

. Weiss 4 , Bridget R. Rogers 5 1 National Renewable Energy Laboratory, National Center for Photovoltaics typically exhibit an increase in either optical or electrical properties (one at the expense of the other

Weiss, Sharon

49

RF power recovery feedback circulator  

DOE Patents [OSTI]

A device and method for improving the efficiency of RF systems having a Reflective Load. In the preferred embodiment, Reflected Energy from a superconducting resonator of a particle accelerator is reintroduced to the resonator after the phase of the Reflected Energy is aligned with the phase of the Supply Energy from a RF Energy Source. In one embodiment, a Circulator is used to transfer Reflected Energy from the Reflective Load into a Phase Adjuster which aligns the phase of the Reflected Energy with that of the Supply Energy. The phase-aligned energy is then combined with the Supply Energy, and reintroduced into the Reflective Load. In systems having a constant phase shift, the Phase Adjuster may be designed to shift the phase of the Reflected Energy by a constant amount using a Phase Shifter. In systems having a variety (variable) phase shifts, a Phase Shifter controlled by a phase feedback loop comprising a Phase Detector and a Feedback Controller to account for the various phase shifts is preferable.

Sharamentov, Sergey I. (Bolingbrook, IL)

2011-03-29T23:59:59.000Z

50

Amorphous powders of Al-Hf prepared by mechanical alloying  

SciTech Connect (OSTI)

We synthesized amorphous Al/sub 50/Hf/sub 50/ alloy powder by mechanically alloying an equimolar mixture of crystalline powders of Al and Hf using hexane as a dispersant. We characterized the powder as a function of mechanical-alloying time by scanning electron microscopy, x-ray diffraction, and differential scanning calorimetry. Amorphous Al/sub 50/Hf/sub 50/ powder heated at 10 K s/sup /minus/1/ crystallizes polymorphously at 1003 K into orthorhombic AlHf (CrB-type structure). During mechanical alloying, some hexane decomposes and hydrogen and carbon are incorporated into the amorphous alloy powder. The hydrogen can be removed by annealing the powder by hot pressing at a temperature approximately 30 K below the crystallization temperature. The amorphous compacts have a diamond pyramidal hardness of 1025 DPH. 24 refs., 7 figs., 1 tab.

Schwarz, R.B.; Hannigan, J.W.; Sheinberg, H.; Tiainen, T.

1988-01-01T23:59:59.000Z

51

Theoretical Assessment of 178m2Hf De-Excitation  

SciTech Connect (OSTI)

This document contains a comprehensive literature review in support of the theoretical assessment of the {sup 178m2}Hf de-excitation, as well as a rigorous description of controlled energy release from an isomeric nuclear state.

Hartouni, E P; Chen, M; Descalle, M A; Escher, J E; Loshak, A; Navratil, P; Ormand, W E; Pruet, J; Thompson, I J; Wang, T F

2008-10-06T23:59:59.000Z

52

Robust Diamond-Based RF Switch Yields Enhanced Communication...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Robust Diamond-Based RF Switch Yields Enhanced Communication Capabilities Technology available for licesning: A radio frequency (RF) microelectromechanical system (MEMS) switch...

53

Growth of HfO{sub 2} films using an alternate reaction of HfCl{sub 4} and O{sub 2} under atmospheric pressure  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited onto a Si(100) substrate using an alternate reaction of HfCl{sub 4} and O{sub 2} under atmospheric pressure. Self-limiting growth of the HfO{sub 2} was achieved in the range of the growth temperature above 873K. The X-ray diffraction of the HfO{sub 2} films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. Residual chloride concentration in HfO{sub 2} films were not higher than 0.1at%. When the growth temperature was 973K, the HfSiO{sub x} is formed in HfO{sub 2} film. This gives effective permittivity value of 9.6 for the HfO{sub 2} film grown at 573K.

Takahashi, Naoyuki [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan)]. E-mail: tntakah@ipc.shizuoka.ac.jp; Nonobe, Shinichi [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan); Nakamura, Takato [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan)

2004-11-01T23:59:59.000Z

54

Matching network for RF plasma source  

DOE Patents [OSTI]

A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.

Pickard, Daniel S. (Palo Alto, CA); Leung, Ka-Ngo (Hercules, CA)

2007-11-20T23:59:59.000Z

55

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

56

Samsung: ENERGY STAR Referral (RF26VAB)  

Broader source: Energy.gov [DOE]

DOE referred the matter of Samsung refrigerator-freezer model RF26VAB to the EPA for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification.

57

Si-based RF MEMS components.  

SciTech Connect (OSTI)

Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

2005-01-01T23:59:59.000Z

58

Deeply scaled CMOS for RF power applications  

E-Print Network [OSTI]

The microelectronics industry is striving to reduce the cost, complexity, and form factor of wireless systems through single-chip integration of analog, RF and digital functions. Driven by the requirements of the digital ...

Scholvin, Jörg, 1976-

2006-01-01T23:59:59.000Z

59

EXPERIMENTAL STUDIES OF RF BREAKDOWNS IN THE COUPLER OF THE TTF RF GUN  

E-Print Network [OSTI]

to han- dle 800 µs long RF pulses with 4.5 MW of peak power and at 10 Hz repetition rate. In this regime

60

Superlattice Structure and Precipitates in O+ and Zr+ Ion Coimplanted...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Zr+ Ion Coimplanted SrTiO3: a Model Waste Form for 90Sr. Abstract: We investigate strontium titanate as a model waste form for 90Sr. Implantation with O+ and Zr+ ions, followed...

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Hole Trapping at Surfaces of mZrO2 and mHfO2 Nanocrystals. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun withconfinement plasmas in theinPlasticsreductionCuln(1-x)GaxSe2 Solar

62

Two-Dimensional Polaronic Behavior in the Binary Oxides m-HfO2 and m-ZrO2.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layeredof Energy Two CompaniesTwo Studies RevealTwoColumn|

63

E-Print Network 3.0 - atmospheric pressure hf Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: atmospheric pressure hf Page: << < 1 2 3 4 5 > >> 1 Atomic rearrangements in HfO2Si1-xGex interfaces Deok-Yong Cho and S.-J. Oha Summary: by PDA. PDA was per- formed...

64

RF BREAKDOWN STUDIES USING PRESSURIZED CAVITIES  

SciTech Connect (OSTI)

Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A 1.3 GHz RF test cell capable of operating both at high pressure and in vacuum with replaceable electrodes was designed, built, and power tested in preparation for testing the frequency and geometry effects of RF breakdown at Argonne National Lab. At the time of this report this cavity is still waiting for the 1.3 GHz klystron to be available at the Wakefield Test Facility. (3) Under a contract with Los Alamos National Lab, an 805 MHz RF test cavity, known as the All-Seasons Cavity (ASC), was designed and built by Muons, Inc. to operate either at high pressure or under vacuum. The LANL project to use the (ASC) was cancelled and the testing of the cavity has been continued under the grant reported on here using the Fermilab Mucool Test Area (MTA). The ASC is a true pillbox cavity that has performed under vacuum in high external magnetic field better than any other and has demonstrated that the high required accelerating gradients for many muon cooling beam line designs are possible. (4) Under ongoing support from the Muon Acceleration Program, microscopic surface analysis and computer simulations have been used to develop models of RF breakdown that apply to both pressurized and vacuum cavities. The understanding of RF breakdown will lead to better designs of RF cavities for many applications. An increase in the operating accelerating gradient, improved reliability and shorter conditioning times can generate very significant cost savings in many accelerator projects.

Johnson, Rolland

2014-09-21T23:59:59.000Z

65

Wideband high efficiency CMOS envelope amplifiers for 4G LTE handset envelope tracking RF power amplifiers  

E-Print Network [OSTI]

RF power amplifier applications," IEEE Journal of Solid-RF power amplifier applications," IEEE Journal of Solid-RF power amplifier applications," IEEE Journal of Solid-

Hassan, Muhammad

2012-01-01T23:59:59.000Z

66

Capacitive Behavior of HF Power Transformers: Global Approach to Draw Robust Equivalent Circuits  

E-Print Network [OSTI]

behavior of all components. Among these components, HF power transformers constitute a special case. EvenCapacitive Behavior of HF Power Transformers: Global Approach to Draw Robust Equivalent Circuits of n-windings HF power transformers. A global approach, mainly based on energy considerations about

Paris-Sud XI, Université de

67

Effect of Al addition on the microstructure and electronic structure of HfO2 film  

E-Print Network [OSTI]

Effect of Al addition on the microstructure and electronic structure of HfO2 film X. F. Wang investigated the microstructures and electronic structures of a series of hafnium aluminate HfAlO films with Al concentration ranging from 0% to 100%. When the films evolve from pure HfO2 to pure Al2O3 by increasing

Gong, Xingao

68

X-Band RF Gun Development  

SciTech Connect (OSTI)

In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

Vlieks, Arnold; Dolgashev, Valery; Tantawi, Sami; /SLAC; Anderson, Scott; Hartemann, Fred; Marsh, Roark; /LLNL, Livermore

2012-06-22T23:59:59.000Z

69

analog rf gap: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LHC, particles not captured by the RF system at injection or leaking out of the RF bucket may quench the superconducting magnets during beam abort. The problem, common to other...

70

Novel rf mems tunable filters with adjustable spurious suppression  

E-Print Network [OSTI]

This thesis presents the theory and design of fixed and Radio Frequency (RF) Microelectromechanical Systems (MEMS) -based tunable microwave filters for RF and microwave applications. The methodology for the design of coupled resonator filters...

Sekar, Vikram

2009-05-15T23:59:59.000Z

71

A day in the life of the RF spectrum  

E-Print Network [OSTI]

There is a misguided perception that RF spectrum space is fully allocated and fully used though even a superficial study of actual spectrum usage by measuring local RF energy shows it largely empty of radiation. Traditional ...

Cooley, James E. (James Edward)

2005-01-01T23:59:59.000Z

72

Design and fabrication of an RF power LDMOSFET on SOI  

E-Print Network [OSTI]

This thesis studied thin-film Silicon-on-Insulator (SOI) LDMOSFET technology for RF power amplifier applications. To conduct this study, two generations of SOI RF power devices for portable wireless systems were designed ...

Fiorenza, James G. (James George), 1972-

2002-01-01T23:59:59.000Z

73

Comparison of the Ca+HF(DF) and Sr+HF(DF) reaction dynamics Rong Zhang, David J. Rakestraw,a) Kenneth G. McKendrick,b) and Richard N. Zare  

E-Print Network [OSTI]

Comparison of the Ca+HF(DF) and Sr+HF(DF) reaction dynamics Rong Zhang, David J. Rakestraw family, Ca and Sr with rovibrationally selected HF or DF, has been carried out under single-collision conditions. A thermal beam of the alkaline earth atoms, Ca or Sr, is fired into a low-pressure gas of HF

Zare, Richard N.

74

Intrinsic metastability of orthorhombic HfTiO{sub 4} in thin film hafnia-titania  

SciTech Connect (OSTI)

Orthorhombic (o) HfTiO{sub 4} is crystallized when sputter deposited hafnia-titania nanolaminates with ultrathin layers and bilayer (HfO{sub 2}){sub 0.5}(TiO{sub 2}){sub 0.5} composition are annealed between 573 and 1173 K. However, o-HfTiO{sub 4} demixes after annealing at 1273 K, a result not predicted from bulk thermodynamics. X-ray diffraction and Raman microscopy are used here to study structural changes as o-HfTiO{sub 4} demixes upon long-term annealing at 1273 K into Ti-doped monoclinic HfO{sub 2} and Hf-doped rutile TiO{sub 2}. We conclude that o-HfTiO{sub 4} crystallized at low temperature is intrinsically metastable. A space group symmetry analysis shows that demixing can be accomplished by a continuous phase transition chain.

Cisneros-Morales, Massiel Cristina; Aita, Carolyn Rubin [Department of Chemistry and Biochemistry, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2011-01-31T23:59:59.000Z

75

Advanced RF power sources for linacs  

SciTech Connect (OSTI)

In order to maintain a reasonable over-all length at high center-of-mass energy, the main linac of an electron-positron linear collider must operate at a high accelerating gradient. For copper (non-superconducting) accelerator structures, this implies a high peak power per unit length and a high peak power per RF source, assuming a limited number of discrete sources are used. To provide this power, a number of devices are currently under active development or conceptual consideration: conventional klystrons with multi-cavity output structures, gyroklystrons, magnicons, sheet-beam klystrons, multiple-beam klystrons and amplifiers based on the FEL principle. To enhance the peak power produced by an rf source, the SLED rf pulse compression scheme is currently in use on existing linacs, and new compression methods that produce a flatter output pulse are being considered for future linear colliders. This paper covers the present status and future outlook for the more important rf power sources and pulse compression systems. It should be noted that high gradient electron linacs have applications in addition to high-energy linear colliders; they can, for example, serve as compact injectors for FEL`s and storage rings.

Wilson, P.B.

1996-10-01T23:59:59.000Z

76

Configurations for short period rf undulators  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Several configurations for rf undulators energized at millimeter wavelengths and designed to produce coherent nanometer radiation from sub-GeV electron beams are analyzed and compared with one another. These configurations include a traveling-wave resonant ring, a standing wave resonator, and a resonator operating close to cutoff.

Kuzikov, S. V.; Jiang, Y.; Marshall, T. C.; Sotnikov, G. V.; Hirshfield, J. L.

2013-07-01T23:59:59.000Z

77

Cw rf operation of the FMIT RFQ  

SciTech Connect (OSTI)

The 80-MHz RFQ for the Fusion Materials Irradiation Test Facility prototype accelerator has been rf conditioned for cw operation to the design field level of 17.5 MV/m (1.68 x Kilpatrick limit). Experimental results and operating experience will be discussed.

Fazio, M.V.; Brandeberry, F.E.

1985-01-01T23:59:59.000Z

78

Emittance control in rf cavities and solenoids  

E-Print Network [OSTI]

We study emittance growth for transport of uniform and Gaussian beams of particles in rf cavities and solenoids and show analytically its dependence on initial beam parameters. Analytical results are confirmed with simulation studies over a broad range of different initial beams.

Eshraqi, Mohammad; Lombardi, Alessandra M

2009-01-01T23:59:59.000Z

79

Compression mode resonances in Zr-90  

E-Print Network [OSTI]

Compression mode resonances in 90Zr D. H. Youngblood, Y.-W. Lui, B. John,* Y. Tokimoto, H. L. Clark, and X. Chen Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 18 February 2004; published 20 May 2004..., JOHN, TOKIMOTO, CLARK, AND CHEN PHYSICAL REVIEW C 69, 054312 (2004) 054312-2 Fig. 2. The continuum distributions are similar over the en- tire energy range, whereas the angular distributions of the cross sections for the peak change...

Youngblood, David H.; Lui, YW; John, B.; Tokimoto, Y.; Clark, HL; Chen, X.

2004-01-01T23:59:59.000Z

80

RUGGED CERAMIC WINDOW FOR RF APPLICATIONS  

SciTech Connect (OSTI)

High-current RF cavities that are needed for many accelerator applications are often limited by the power transmission capability of the pressure barriers (windows) that separate the cavity from the power source. Most efforts to improve RF window design have focused on alumina ceramic, the most popular historical choice, and have not taken advantage of new materials. Alternative window materials have been investigated using a novel Merit Factor comparison and likely candidates have been tested for the material properties which will enable construction in the self-matched window configuration. Window assemblies have also been modeled and fabricated using compressed window techniques which have proven to increase the power handling capability of waveguide windows. Candidate materials have been chosen to be used in fabricating a window for high power testing at Thomas Jefferson National Accelerator Facility.

MIKE NEUBAUER

2012-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

An Efficient RF Source for Jlab  

SciTech Connect (OSTI)

We propose the development of a highly reliable high efficiency RF source for JLAB with a lower lifetime cost operating at 80% efficiency with system operating costs of about 0.7M$/year for the 6 GeV machine. The design of the RF source will be based upon two injection locked magnetrons in a novel combining architecture for amplitude modulation and a cross field amplifier (CFA) as an output tube for the 12 GeV upgrade. A cost analysis including efficiency and reliability will be performed to determine the optimum system architecture. Several different system architectures will be designed and evaluated for a dual injection locked magnetron source using novel combining techniques and possibly a CFA as the output tube. A paper design for the 1497 MHz magnetron system will be completed. The optimum system architecture with all relevant specifications will be completed so that a prototype can be built.

Neubauer, M. [Muons, Inc.; Dudas, A. [Muons, Inc.; Rimmer, Robert A. [JLAB; Wang, Haipeng [JLAB

2013-12-01T23:59:59.000Z

82

ILC RF System R and D  

SciTech Connect (OSTI)

The Linac Group at SLAC is actively pursuing a broad range of R&D to improve the reliability and reduce the cost of the L-band (1.3 GHz) rf system proposed for the ILC linacs. Current activities include the long-term evaluation of a 120 kV Marx Modulator driving a 10 MW Multi-Beam Klystron, design of a second-generation Marx Modulator, testing of a sheet-beam gun and beam transport system for a klystron, construction of an rf distribution system with remotely-adjustable power tapoffs, and development of a system to combine the power from many klystrons in low-loss circular waveguide where it would be tapped-off periodically to power groups of cavities. This paper surveys progress during the past few years.

Adolphsen, Chris; /SLAC

2012-07-03T23:59:59.000Z

83

The new RF sources for accelerators  

SciTech Connect (OSTI)

Several new RF sources are being developed for accelerator and collider applications. Assembly is nearing completion of a multiple beam inductive output tube at 352 MHz. An annular beam klystron is being developed to produce 10 MW pulses at 1.3 GHz. The annular beam approach provides significant cost reduction over similar multiple beam devices. Fabrication is underway on a 10 kW, periodic permanent magnet klystron at 2.815 GHz. Permanent magnets eliminate the solenoid and associated power supplies and cooling requirements to reduce operational cost. Investigations are beginning on a novel approach for driving accelerator cavities using pulse shaping to increase coupling efficiency and dramatically reduce RF power requirements.

Ives, Lawrence; Read, Michael; Ferguson, Patrick; Marsden, David; Collins, George; Jackson, R. H.; Bui, Thuc; Kimura, Takuji; Eisen, Edward [Calabazas Creek Research, Inc., 690 Port Drive, San Mateo, CA, 94404, (650) 312-9575 (United States); Communications and Power Industries, LLC., 811 Hansen Way, Palo Alto, CA94304 (United States)

2012-12-21T23:59:59.000Z

84

Radio frequency (RF) heated supersonic flow laboratory  

SciTech Connect (OSTI)

A unique supersonic flow apparatus which employs an inductively-coupled, radio frequency (RF) torch to supply high enthalpy source gas to the nozzle inlet is described. The main features of this system are the plasma tube, a cooled nozzle assembly, and a combustion/expansion chamber with a heat exchanger. A description of these components with current test data is presented. In addition, a discussion of anticipated experiments utilizing this system is included.

Wantuck, P.; Watanabe, H.

1990-01-01T23:59:59.000Z

85

RF Micro Devices | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColoradosource History View New PagesElectron srlRF Micro Devices

86

RF Gun Photocathode Research at SLAC  

SciTech Connect (OSTI)

LCLS is presently operating with a third copper photocathode in the original rf gun, with a quantum efficiency (QE) of {approx}1 x 10{sup -4} and projected emittance {gamma}{var_epsilon}{sub x,y} = 0.45 {micro}m at 250 pC bunch charge. The spare LCLS gun is installed in the SLAC Accelerator Structure Test Area (ASTA), fully processed to high rf power. As part of a wider photocathode R and D program, a UV laser system and additional gun diagnostics are being installed at ASTA to measure QE, QE lifetime, and electron beam emittance under a variety of operating conditions. The near-term goals are to test and verify the spare photocathode production/installation sequence, including transfer from the final holding chamber to the rf gun. Mid- and longer-term goals include development of a rigorous understanding of plasma and laser-assisted surface conditioning and investigation of new, high-QE photocathode materials. In parallel, an x-ray photoemission spectroscopy station is nearing completion, to analyze Cu photocathode surface chemistry. In this paper we review the status and anticipated operating parameters of ASTA and the spectroscopy test chamber.

Jongewaard, E.; Akre, R.; Brachmann, A.; Corbett, J.; Gilevich, S.; Grouev, K.; Hering, P.; P.Krejcik,; Lewandowski, J.; Loos, H.; Montagne, T.; Sheppard, J.C.; Stefan, P.; Vlieks, A.; Weathersby, S.; Zhou, F.; /SLAC

2012-05-16T23:59:59.000Z

87

E-Print Network 3.0 - ab initio hf Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: ab initio hf Page: << < 1 2 3 4 5 > >> 1 imageslogoetsf Introduction Electron Energy Loss Spectroscopy Applications: Nanotubes and Graphene Perspectives Summary: of...

88

Reduced-temperature processing and consolidation of ultra-refractory Ta4HfC5  

SciTech Connect (OSTI)

TaC, HfC, and WC powders were subjected to high-energy milling and hot pressing to produce Ta4HfC5, a composite of Ta(4)HfC5 + 30 vol.% WC, and a composite of Ta4HfC5 + 50 vol.% WC. Sub-micron powders were examined after four different milling intervals prior to hot pressing. XRD was used to verify proper phase formation. SEM, relative density, and hardness measurements were used to examine the resulting phases. Hot pressed compacts of Ta4HfC5 showed densification as high as 98.6% along with Vickers hardness values of 21.4 GPa. Similarly, Ta4HfC5 + 30 vol.% WC exhibited 99% densification with a Vickers hardness of 22.5 GPa. These levels of densification were achieved at 1500 degrees C, which is lower than any previously reported sintering temperature for Ta4HfC5. Microhardness values measured in this study were higher than those previously reported for Ta4HfC5. The WC additions to Ta4HfC5 were found to improve densification and increase microhardness. (C) 2013 Elsevier Ltd. All rights reserved.

Gaballa, Osama [Ames Laboratory; Cook, B. A. [TRI International; Russell, A. M. [Ames Laboratory

2013-04-26T23:59:59.000Z

89

Design and Manufacture of the RF Power Supply and RF Transmission Line for SANAEM Project Prometheus  

E-Print Network [OSTI]

A 1-5 MeV proton beamline is being built by the Turkish Atomic Energy Authority in collaboration with a number of graduate students from different universities. The most important aspect of the project, is to acquire the design ability and manufacturing capability of all the components locally. SPP will be an accelerator and beam diagnostics test facility and it will also serve the detector development community with its low beam current. This paper discusses the design and construction of the RF power supply and the RF transmission line components such as its waveguide converters and its circulator.

Turemen, G; Unel, G; Alacakir, A

2015-01-01T23:59:59.000Z

90

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement  

SciTech Connect (OSTI)

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1?x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw; Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2014-03-17T23:59:59.000Z

91

A STATE VARIABLE DESCRIPTION OF THE RHIC RF CONTROL LOOPS.  

SciTech Connect (OSTI)

The beam transfer function changes during the RHIC ramp. The response of the RF control loops changes as a result. A state-variable description of the beam and the RF control loops was developed. This description was used to generate a set of feedback matrices that keeps the response of the RF control loops constant during the ramp. This paper describes the state-variable description and its use in determining the K matrices.

SCHULTHEISS,C.; BRENNAN,J.M.

2002-06-02T23:59:59.000Z

92

RF Gun cavities cooling regime study. K. Floettmann1  

E-Print Network [OSTI]

RF power of Pa 68kW corre- sponds to a heat load of 300kW m . To remove such a high heat value from of RF fields in the cavity at an operating frequency is calculated in the usual way. The temperature) with the boundary condition at the RF cavity surface: kc(ngradT) = Ps, (2) where kc = 391 W m·K is the heat

93

Multi-Physics Analysis of the Fermilab Booster RF Cavity  

SciTech Connect (OSTI)

After about 40 years of operation the RF accelerating cavities in Fermilab Booster need an upgrade to improve their reliability and to increase the repetition rate in order to support a future experimental program. An increase in the repetition rate from 7 to 15 Hz entails increasing the power dissipation in the RF cavities, their ferrite loaded tuners, and HOM dampers. The increased duty factor requires careful modelling for the RF heating effects in the cavity. A multi-physic analysis investigating both the RF and thermal properties of Booster cavity under various operating conditions is presented in this paper.

Awida, M.; Reid, J.; Yakovlev, V.; Lebedev, V.; Khabiboulline, T.; Champion, M.; /Fermilab

2012-05-14T23:59:59.000Z

94

Investigation of Microscopic Materials Limitations of Superconducting RF Cavities  

SciTech Connect (OSTI)

The high-field performance of SRF cavities is often limited by breakdown events below the intrinsic limiting surface fields of Nb, and there is abundant evidence that these breakdown events are localized in space inside the cavity. Also, there is a lack of detailed understanding of the causal links between surface treatments and ultimate RF performance at low temperatures. An understanding of these links would provide a clear roadmap for improvement of SRF cavity performance, and establish a cause-and-effect ‘RF materials science’ of Nb. We propose two specific microscopic approaches to addressing these issues. First is a spatially-resolved local microwave-microscope probe that operates at SRF frequencies and temperatures to discover the microscopic origins of breakdown, and produce quantitative measurements of RF critical fields of coatings and films. Second, RF Laser Scanning Microscopy (LSM) has allowed visualization of RF current flow and sources of nonlinear RF response in superconducting devices with micro-meter spatial resolution. The LSM will be used in conjunction with surface preparation and characterization techniques to create definitive links between physical and chemical processing steps and ultimate cryogenic microwave performance. We propose to develop RF laser scanning microscopy of small-sample Nb pieces to establish surface-processing / RF performance relations through measurement of RF current distributions on micron-length scales and low temperatures.

Anlage, Steven [University of Maryland

2014-07-23T23:59:59.000Z

95

Active high-power RF switch and pulse compression system  

DOE Patents [OSTI]

A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

Tantawi, Sami G. (San Mateo, CA); Ruth, Ronald D. (Woodside, CA); Zolotorev, Max (Mountain View, CA)

1998-01-01T23:59:59.000Z

96

A new microphonics measurement method for superconducting RF...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

new microphonics measurement method for superconducting RF cavities Re-direct Destination: Mechanical vibrations of the superconducting cavity, also known as microphonics, cause...

97

argon rf plasma: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

you for being so encouraging, for listening to and understanding the woes of RF plasma research, and for being so friendly at conferences and in the hallways. Professor...

98

ccsd00001055 First principles study of the solubility of Zr in Al  

E-Print Network [OSTI]

ccsd­00001055 (version 1) : 22 Jan 2004 First principles study of the solubility of Zr in Al (Dated: January 22, 2004) The experimental solubility limit of Zr in Al is well-known. Al3Zr has a stable the solubility limit of Zr in Al for the stable as well as the metastable phase diagrams. The formation energies

99

Sandia National Laboratories: RF & Photonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErik SpoerkeSolar Regional Test CenterCMCNational LaboratoriesRF &

100

Hf isotope compositions of northern Luzon arc lavas suggest involvement of pelagic sediments in their source  

E-Print Network [OSTI]

1 Hf isotope compositions of northern Luzon arc lavas suggest involvement of pelagic sediments passing through the data intersect fields for depleted mantle and pelagic sediments suggesting. The relationship between Nd and Hf isotopic compositions in the Luzon volcanics show that the type of sediment

Boyer, Edmond

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Finland HF and Esrange MST radar observations of polar mesosphere summer echoes  

E-Print Network [OSTI]

Finland HF and Esrange MST radar observations of polar mesosphere summer echoes Tadahiko Ogawa1 (200x) xx:1­8 Finland HF and Esrange MST radar observations of polar mesosphere summer echoes Tadahiko in Finland are presented. The echoes were detected at four frequencies of 9, 11, 13 and 15 MHz at slant

Kirkwood, Sheila

102

Interfacial and structural properties of sputtered HfO{sub 2} layers  

SciTech Connect (OSTI)

Magnetron sputtered HfO{sub 2} layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO{sub x} suboxide layer at the HfO{sub 2}/Si interface is unavoidable. The HfO{sub 2} thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O{sub 2}/Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO{sub 2}, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO{sub 2} layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO{sub 2} to form HfO{sub 2}, leaving Si-Si bonds behind.

Aygun, G. [Department of Physics, Izmir Institute of Technology, Urla, TR-35430 Izmir (Turkey); Yildiz, I. [Department of Physics, Middle East Technical University, TR-06531 Ankara (Turkey); Central Laboratory, Middle East Technical University, TR-06531 Ankara (Turkey)

2009-07-01T23:59:59.000Z

103

A Study of the Grain Boundaries and Hydrogen in HF-CVD Diamond Films  

E-Print Network [OSTI]

composition of grain boundaries in polycrystalline diamond lms by transmission electron microscopy and highA Study of the Grain Boundaries and Hydrogen in HF-CVD Diamond Films Israel Yoel Koenka #12;A Study of the Grain Boundaries and Hydrogen in HF-CVD Diamond Films Research Thesis In partial fulllment

Adler, Joan

104

Ca+HF: The anatomy of a chemical insertion reaction R. L. Jaffe  

E-Print Network [OSTI]

Ca+HF: The anatomy of a chemical insertion reaction R. L. Jaffe NASA Ames Research Center, Moffett theoretical investigation of the gas phase reaction Ca + HF-CaF + H is reported. The overall study involves electronic state of the Ca-F-H system, (b) careful fitting of the computed surface to an analytical form

Zare, Richard N.

105

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

106

Crystal structure of Si-doped HfO{sub 2}  

SciTech Connect (OSTI)

Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at.?%. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while ? decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

Zhao, Lili [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); School of Information Science and Technology, Northwest University, Xi'an 710127 (China); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nelson, Matthew; Fancher, Chris M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Aldridge, Henry [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nishida, Toshikazu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-01-21T23:59:59.000Z

107

Thermal decomposition of HfCl{sub 4} as a function of its hydration state  

SciTech Connect (OSTI)

The thermogravimetric behavior of HfCl{sub 4} powders with different hydration states has been compared. Strongly hydrated powders consist of HfOCl{sub 2}.nH{sub 2}O with n>4. Partially hydrated powders consist of particles with a HfCl{sub 4} core and a hydrated outerlayer of HfOCl{sub 2}.nH{sub 2}O with n in the range of 0-8. Hydrated powders decomposed at temperature lower than 200 deg. C whereas the decomposition of partially hydrated powders was completed at a temperature of around 450 deg. C. The observed differences in decomposition temperature is related to the structure of HfOCl{sub 2}.nH{sub 2}O, which is different if n is higher or smaller than 4 and leads to intermediate compounds, which decompose at different temperatures.

Barraud, E. [Laboratoire de Science et Genie des Materiaux et de Metallurgie, UMR CNRS INPL 7584, Ecole des Mines, F-54042 Nancy Cedex (France); Begin-Colin, S. [Laboratoire de Science et Genie des Materiaux et de Metallurgie, UMR CNRS INPL 7584, Ecole des Mines, F-54042 Nancy Cedex (France) and Institut de Physique et Chimie des Materiaux, GMI, UMR CNRS-ULP 7504, Ecole de Chimie, Polymeres et Materiaux, 23, rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France)]. E-mail: begin@ipcms.u-strasbg.fr; Le Caer, G. [Groupe Matiere Condensee et Materiaux, UMR CNRS-Universite de Rennes-I 6626, Campus de Beaulieu, Batiment 11A, F-35042 Rennes Cedex (France); Villieras, F. [Laboratoire Environnement et Mineralurgie, UMR CNRS-INPL 7569, Ecole Nationale Superieure de Geologie de Nancy, F-54501 Vandoeuvre-les-Nancy Cedex (France); Barres, O. [Laboratoire Environnement et Mineralurgie, UMR CNRS-INPL 7569, Ecole Nationale Superieure de Geologie de Nancy, F-54501 Vandoeuvre-les-Nancy Cedex (France)

2006-06-15T23:59:59.000Z

108

Extremely high frequency RF effects on electronics.  

SciTech Connect (OSTI)

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.

Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale; Williams, Jeffery Thomas; Wouters, Gregg A.; Bacon, Larry Donald; Mar, Alan

2012-01-01T23:59:59.000Z

109

Safety Slide 1 Hydrofluoric (HF) Acid Hazards http://www.emsworld.com/web/online/Education/Hydrofluoric-Acid-/5$12949  

E-Print Network [OSTI]

Safety Slide 1 ­ Hydrofluoric (HF) Acid Hazards http://www.emsworld.com/web may be delayed for up to 24 hours, even with dilute solutions. HF burns affect deep tissue layers

Cohen, Robert E.

110

RF Thermal Plasma Synthesis of Ferrite Nanopowders from Metallurgical Wastes  

E-Print Network [OSTI]

RF Thermal Plasma Synthesis of Ferrite Nanopowders from Metallurgical Wastes J.Szépvölgyi1 , I Department of General Physics, Eötvös University H-1518 Budapest, P.O.B. 32 Hungary Keywords: zinc ferrite, thermal plasma, waste, XRD Abstract. RF thermal plasma synthesis of zinc-ferrite nanopowders has been

Gubicza, Jenõ

111

RF-MEMS capacitive switches with high reliability  

DOE Patents [OSTI]

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03T23:59:59.000Z

112

Booster Synchrotron RF System Upgrade for SPEAR3  

SciTech Connect (OSTI)

Recent progress at the SPEAR3 includes the increase in stored current from 100 mA to 200 mA and top-off injection to allow beamlines to stay open during injection. Presently the booster injects 3.0 GeV beam to SPEAR3 three times a day. The stored beam decays to about 150 mA between the injections. The growing user demands are to increase the stored current to the design value of 500 mA, and to maintain it at a constant value within a percent or so. To achieve this goal the booster must inject once every few minutes. For improved injection efficiency, all RF systems at the linac, booster and SPEAR3 need to be phase-locked. The present booster RF system is basically a copy of the SPEAR2 RF system with 358.5 MHz and 40 kW peak RF power driving a 5-cell RF cavity for 1.0 MV gap voltage. These requirements entail a booster RF system upgrade to a scaled down version of the SPEAR3 RF system of 476.3 MHz with 1.2 MW cw klystron output power capabilities. We will analyze each subsystem option for their merits within budgetary and geometric space constraints. A substantial portion of the system will come from the decommissioned PEP-II RF stations.

Park, Sanghyun; /SLAC; Corbett, Jeff; /SLAC

2012-07-06T23:59:59.000Z

113

RF cavity using liquid dielectric for tuning and cooling  

DOE Patents [OSTI]

A system for accelerating particles includes an RF cavity that contains a ferrite core and a liquid dielectric. Characteristics of the ferrite core and the liquid dielectric, among other factors, determine the resonant frequency of the RF cavity. The liquid dielectric is circulated to cool the ferrite core during the operation of the system.

Popovic, Milorad (Warrenville, IL); Johnson, Rolland P. (Newport News, VA)

2012-04-17T23:59:59.000Z

114

Digital hf radar observations of equatorial spread-F  

SciTech Connect (OSTI)

Modern digital ionosondes, with both direction finding and doppler capabilities can provide large scale pictures of the Spread-F irregularity regions. A morphological framework has been developed that allows interpretation of the hf radar data. A large scale irregularity structure is found to be nightward of the dusk terminator, stationary in the solar reference frame. As the plasma moves through this foehn-wall-like structure it descends, and irregularities may be generated. Localized upwellings, or bubbles, may be produced, and they drift with the background plasma. The spread-F irregularity region is found to be best characterized as a partly cloudy sky, due to the patchiness of the substructures. 13 references, 16 figures.

Argo, P.E.

1984-01-01T23:59:59.000Z

115

DFT STUDY REVISES INTERSTITIAL CONFIGURATIONS IN HCP Zr  

SciTech Connect (OSTI)

Analysis of experimental result on microstructure evolution in irradiated Zr and alloys has demonstrated that available knowledge on self-interstitial defects in Zr is in contradiction. We therefore have initiated an extensive theoretical and modeling program to clarify this issue. In this report we present first ab initio calculations results of single SIA configurations in Zr. We demonstrate importance of simulations cell size, applied exchange-correlation functional and simulated c/a ratio. The results obtained demonstrate clearly that the most stable configurations are in basal plane and provide some evidences for enhanced interstitial transport along basal planes. The results obtained will be used in generation a new interatomic potential for Zr to be used in large-scale atomistic modeling of mechanisms relevant for radiation-induced microstructure evolution.

Samolyuk, German D [ORNL; Golubov, Stanislav I [ORNL; Osetskiy, Yury N [ORNL; Stoller, Roger E [ORNL

2012-06-01T23:59:59.000Z

116

Progress on a cryogenically cooled RF gun polarized electron source  

SciTech Connect (OSTI)

RF guns have proven useful in multiple accelerator applications. An RF gun capable of producing polarized electrons is an attractive electron source for the ILC or an electron-ion collider. Producing such a gun has proven elusive. The NEA GaAs photocathode needed for polarized electron production is damaged by the vacuum environment in an RF gun. Electron and ion back bombardment can also damage the cathode. These problems must be mitigated before producing an RF gun polarized electron source. In this paper we report continuing efforts to improve the vacuum environment in a normal conducting RF gun by cooling it with liquid nitrogen after a high temperature vacuum bake out. We also report on a design of a cathode preparation chamber to produce bulk GaAs photocathodes for testing in such a gun. Future directions are also discussed.

Fliller, R.P., III; Edwards, H.; /Fermilab

2006-08-01T23:59:59.000Z

117

The electrical and lumen output characteristics of an RF lamp  

SciTech Connect (OSTI)

Low pressure rf discharges have been studied for over a century. Their first practical application for lighting was proposed by Tesla in 1891. Since then hundreds of patents have been published attempting to implement rf lighting. However, progress in understanding rf discharge phenomena (mostly driven by plasma processing needs) and dramatic improvement in the performance/cost ratio of rf power sources have recently opened the door for development of rf light sources. Today commercial inductively coupled electrodeless lamps are offered by Matsuhita, Philips and GE. In this work the authors present measurements of the electrical characteristics and lumen output from a 2.65 MHz driven inductively coupled light source. Measurements were made on a spherical lamp of 3.125 inch diameter with a re-entrant cavity that houses a cylindrical ferrite core around which is wrapped the primary coil.

Alexandrovich, B.M.; Godyak, V.A.; Piejak, R.B. [Osram Sylvania Inc., Beverly, MA (United States)

1996-12-31T23:59:59.000Z

118

Upgrade of the cryogenic CERN RF test facility  

SciTech Connect (OSTI)

With the large number of superconducting radiofrequency (RF) cryomodules to be tested for the former LEP and the present LHC accelerator a RF test facility was erected early in the 1990’s in the largest cryogenic test facility at CERN located at Point 18. This facility consisted of four vertical test stands for single cavities and originally one and then two horizontal test benches for RF cryomodules operating at 4.5 K in saturated helium. CERN is presently working on the upgrade of its accelerator infrastructure, which requires new superconducting cavities operating below 2 K in saturated superfluid helium. Consequently, the RF test facility has been renewed in order to allow efficient cavity and cryomodule tests in superfluid helium and to improve its thermal performances. The new RF test facility is described and its performances are presented.

Pirotte, O.; Benda, V.; Brunner, O.; Inglese, V.; Maesen, P.; Vullierme, B. [CERN - European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Koettig, T. [ESS - European Spallation Source, Box 176, 221 00 Lund (Sweden)

2014-01-29T23:59:59.000Z

119

SUPERCONDUCTING RF-DIPOLE DEFLECTING AND CRABBING CAVITIES  

SciTech Connect (OSTI)

Recent interests in designing compact deflecting and crabbing structures for future accelerators and colliders have initiated the development of novel rf structures. The superconducting rf-dipole cavity is one of the first compact designs with attractive properties such as higher gradients, higher shunt impedance, the absence of lower order modes and widely separated higher order modes. Two rf-dipole designs of 400 MHz and 499 MHz have been designed, fabricated and tested as proof-of-principle designs of compact deflecting and crabbing cavities for the LHC high luminosity upgrade and Jefferson Lab 12 GeV upgrade. The first rf tests have been performed on the rf-dipole geometries at 4.2 K and 2.0 K in a vertical test assembly with excellent results. The cavities have achieved high gradients with high intrinsic quality factors, and multipacting levels were easily processed.

Delayen, Jean [ODU, JLAB; De Silva, Paygalage Subashini [ODU, JLAB

2013-09-01T23:59:59.000Z

120

Hydrogen-filled RF Cavities for Muon Beam Cooling  

SciTech Connect (OSTI)

Ionization cooling requires low-Z energy absorbers immersed in a strong magnetic field and high-gradient, large-aperture RF cavities to be able to cool a muon beam as quickly as the short muon lifetime requires. RF cavities that operate in vacuum are vulnerable to dark-current- generated breakdown, which is exacerbated by strong magnetic fields, and they require extra safety windows that degrade cooling, to separate RF regions from hydrogen energy absorbers. RF cavities pressurized with dense hydrogen gas will be developed that use the same gas volume to provide the energy absorber and the RF acceleration needed for ionization cooling. The breakdown suppression by the dense gas will allow the cavities to operate in strong magnetic fields. Measurements of the operation of such a cavity will be made as functions of external magnetic field and charged particle beam intensity and compared with models to understand the characteristics of this technology and to develop mitigating strategies if necessary.

CHARLES, Ankenbrandt

2009-04-17T23:59:59.000Z

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121

Traveling Wave RF Systems for Helical Cooling Channels  

SciTech Connect (OSTI)

The great advantage of the helical ionization cooling channel (HCC) is its compact structure that enables the fast cooling of muon beam 6-dimensional phase space. This compact aspect requires a high average RF gradient, with few places that do not have cavities. Also, the muon beam is diffuse and requires an RF system with large transverse and longitudinal acceptance. A traveling wave system can address these requirements. First, the number of RF power coupling ports can be significantly reduced compared with our previous pillbox concept. Secondly, by adding a nose on the cell iris, the presence of thin metal foils traversed by the muons can possibly be avoided. We show simulations of the cooling performance of a traveling wave RF system in a HCC, including cavity geometries with inter-cell RF power couplers needed for power propagation.

Yonehara, K.; Lunin, A.; Moretti, A.; Popovic, M.; Romanov, G.; /Fermilab; Neubauer, M.; Johnson, R.P.; /Muons Inc., Batavia; Thorndahl, L.; /CERN

2009-05-01T23:59:59.000Z

122

Wideband high efficiency CMOS envelope amplifiers for 4G LTE handset envelope tracking RF power amplifiers  

E-Print Network [OSTI]

addition, the small equivalent resistance of 8? of the RF PAor inefficient. The equivalent resistance of RF PA, R PA ,normalized equivalent load resistance (R PA ) representing

Hassan, Muhammad

2012-01-01T23:59:59.000Z

123

High-power RF testing of a 352-MHZ fast-ferrite RF cavity tuner at the Advanced Photon Source.  

SciTech Connect (OSTI)

A 352-MHz fast-ferrite rf cavity tuner, manufactured by Advanced Ferrite Technology, was high-power tested on a single-cell copper rf cavity at the Advanced Photon Source. These tests measured the fast-ferrite tuner performance in terms of power handling capability, tuning bandwidth, tuning speed, stability, and rf losses. The test system comprises a single-cell copper rf cavity fitted with two identical coupling loops, one for input rf power and the other for coupling the fast-ferrite tuner to the cavity fields. The fast-ferrite tuner rf circuit consists of a cavity coupling loop, a 6-1/8-inch EIA coaxial line system with directional couplers, and an adjustable 360{sup o} mechanical phase shifter in series with the fast-ferrite tuner. A bipolar DC bias supply, controlled by a low-level rf cavity tuning loop consisting of an rf phase detector and a PID amplifier, is used to provide a variable bias current to the tuner ferrite material to maintain the test cavity at resonance. Losses in the fast-ferrite tuner are calculated from cooling water calorimetry. Test data will be presented.

Horan, D.; Cherbak, E.; Accelerator Systems Division (APS)

2006-01-01T23:59:59.000Z

124

Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces  

SciTech Connect (OSTI)

We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.

Cho, Deok-Yong; Oh, S.-J.; Chang, Y.J.; Noh, T.W.; Jung, Ranju; Lee, Jae-Cheol [CSCMR and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); ReCOE and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Samsung Advanced Institute of Technology, Suwon 440-900 (Korea, Republic of)

2006-05-08T23:59:59.000Z

125

Towards forming-free resistive switching in oxygen engineered HfO{sub 2?x}  

SciTech Connect (OSTI)

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2?x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2?x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Gloskovskii, A. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-02-10T23:59:59.000Z

126

Low energy N{sub 2} ion bombardment for removal of (HfO{sub 2}){sub x}(SiON){sub 1-x} in dilute HF  

SciTech Connect (OSTI)

The ion assisted wet removal of (HfO{sub 2}){sub x}(SiON){sub 1-x} high dielectric constant (k) materials and its effect on electrical properties were investigated. Crystallization temperature of (HfO{sub 2}){sub x}(SiON){sub 1-x} increased as the percentage of SiON increased. The crystallized (HfO{sub 2}){sub 0.6}(SiON){sub 0.4} was damaged and turned to an amorphous film via incorporation of N species into the film by N{sub 2} plasma treatment. In addition, the structure of (HfO{sub 2}){sub 0.6}(SiON){sub 0.4} was disintegrated into HfO{sub 2}, SiO(N), and ON after N{sub 2} plasma treatment. N{sub 2} plasmas using low bias power were applied for wet removal of high-k films and the mechanism of the ion assisted wet removal process was explored. When high bias power was applied, the surface of source and drain regions was nitrided via the reaction between N and Si substrates. Feasibility of the low bias power assisted wet removal process was demonstrated for short channel high-k metal oxide semiconductor device fabrication by the smaller shift of threshold voltage, compared to the high bias power assisted wet removal process as well as the wet-etching-only process.

Hwang, Wan Sik; Cho, Byung-Jin; Chan, Daniel S. H.; Yoo, Won Jong [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, E4A 02-04, Engineering Drive 3, 117576 Singapore (Singapore); SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Mechanical Engineering, Sungkyunkwan University 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2007-07-15T23:59:59.000Z

127

Mixed cation phases in sputter deposited HfO{sub 2}-TiO{sub 2} nanolaminates  

SciTech Connect (OSTI)

Nanolaminate HfO{sub 2}-TiO{sub 2} films are grown by reactive sputter deposition on unheated fused SiO{sub 2}, sequentially annealed at 573 to 973 K, and studied by x-ray diffraction. A nanocrystalline structure of orthorhombic (o) HfTiO{sub 4} adjacent to an interface followed by monoclinic (m) Hf{sub 1-x}Ti{sub x}O{sub 2} is identified. m-Hf{sub 1-x}Ti{sub x}O{sub 2}, a metastable phase, is isomorphous with m-HfO{sub 2} and a high pressure phase, m-HfTiO{sub 4}. A Vegard's law analysis shows that the Ti atomic fraction in m-Hf{sub 1-x}Ti{sub x}O{sub 2} is much greater than Ti equilibrium solubility in m-HfO{sub 2}. A space group-subgroup argument proposes that m-Hf{sub 1-x}Ti{sub x}O{sub 2} arises from an o/m-HfTiO{sub 4} second order phase transition to accommodate the larger Hf atom.

Cisneros-Morales, M. C.; Aita, C. R. [Advanced Coatings Experimental Laboratory, College of Engineering and Applied Science, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States)

2008-07-14T23:59:59.000Z

128

Suppression of interfacial reaction for HfO{sub 2} on silicon by pre-CF{sub 4} plasma treatment  

SciTech Connect (OSTI)

In this letter, the effects of pre-CF{sub 4} plasma treatment on Si for sputtered HfO{sub 2} gate dielectrics are investigated. The significant fluorine was incorporated at the HfO{sub 2}/Si substrate interface for a sample with the CF{sub 4} plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF{sub 4} plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF{sub 4} plasma treated sample due to the elimination of the interfacial layer between HfO{sub 2} and Si substrate. These improved characteristics of the HfO{sub 2} gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO{sub 2} film into the Si substrate.

Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (China); Nanya Technology Corporation, Hwa-Ya Technology Park, 669 Fu-Hsing 3rd Rd., Kueishan, Taoyuan 338, Taiwan (China); Institute for Microstructural Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

2006-08-14T23:59:59.000Z

129

Design studies for the LCLS 120 Hz RF gun  

SciTech Connect (OSTI)

A preliminary design studies were carried out at Brookhaven National Laboratory for a photocathode RF gun injection system for LCLS 120 Hz operation. The starting point for the design is 50 Hz BNL Gun IV developed by a BNL/KEK/SHI collaboration. The basic parameters of the 120 Hz gun is discussed in this report. The complete photocathode RF gun injection system is described for a 120 Hz operation. The injector system includes photocathode RF gun, emittance compensation solenoid magnet, laser system and laser beam delivery system, and electron beam diagnostics. The basic design parameters, mechanical modification and the performance will be presented in this report.

Wang, X.J.; Babzien, M.; Ben-Zvi, I.; Chang, X.Y.; Pjerov, S.; Woodle, M.

2000-11-01T23:59:59.000Z

130

An RF dosimeter for independent SAR measurement in MRI scanners  

SciTech Connect (OSTI)

Purpose: The monitoring and management of radio frequency (RF) exposure is critical for ensuring magnetic resonance imaging (MRI) safety. Commercial MRI scanners can overestimate specific absorption rates (SAR) and improperly restrict clinical MRI scans or the application of new MRI sequences, while underestimation of SAR can lead to tissue heating and thermal injury. Accurate scanner-independent RF dosimetry is essential for measuring actual exposure when SAR is critical for ensuring regulatory compliance and MRI safety, for establishing RF exposure while evaluating interventional leads and devices, and for routine MRI quality assessment by medical physicists. However, at present there are no scanner-independent SAR dosimeters. Methods: An SAR dosimeter with an RF transducer comprises two orthogonal, rectangular copper loops and a spherical MRI phantom. The transducer is placed in the magnet bore and calibrated to approximate the resistive loading of the scanner's whole-body birdcage RF coil for human subjects in Philips, GE and Siemens 3 tesla (3T) MRI scanners. The transducer loop reactances are adjusted to minimize interference with the transmit RF field (B{sub 1}) at the MRI frequency. Power from the RF transducer is sampled with a high dynamic range power monitor and recorded on a computer. The deposited power is calibrated and tested on eight different MRI scanners. Whole-body absorbed power vs weight and body mass index (BMI) is measured directly on 26 subjects. Results: A single linear calibration curve sufficed for RF dosimetry at 127.8 MHz on three different Philips and three GE 3T MRI scanners. An RF dosimeter operating at 123.2 MHz on two Siemens 3T scanners required a separate transducer and a slightly different calibration curve. Measurement accuracy was ?3%. With the torso landmarked at the xiphoid, human adult whole?body absorbed power varied approximately linearly with patient weight and BMI. This indicates that whole-body torso SAR is on average independent of the imaging subject, albeit with fluctuations. Conclusions: Our 3T RF dosimeter and transducers accurately measure RF exposure in body-equivalent loads and provide scanner-independent assessments of whole-body RF power deposition for establishing safety compliance useful for MRI sequence and device testing.

Qian, Di; Bottomley, Paul A. [Division of MR Research, Department of Radiology, Johns Hopkins School of Medicine, Baltimore, Maryland 21287 and Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States)] [Division of MR Research, Department of Radiology, Johns Hopkins School of Medicine, Baltimore, Maryland 21287 and Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); El-Sharkawy, AbdEl-Monem M.; Edelstein, William A., E-mail: w.edelstein@gmail.com [Division of MR Research, Department of Radiology, Johns Hopkins School of Medicine, Baltimore, Maryland 21287 (United States)

2013-12-15T23:59:59.000Z

131

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

132

In situ characterization of initial growth of HfO{sub 2}  

SciTech Connect (OSTI)

The initial growth of HfO{sub 2} on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO{sub 2} films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO{sub 2} is not completely formed. A continuous usable HfO{sub 2} film with thickness of about 1.2 nm is presented in this work.

Wang, L.; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Xue, K.; Xu, J. B. [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)

2009-01-19T23:59:59.000Z

133

LuHf isotope systematics of fossil biogenic apatite and their effects on geochronology  

E-Print Network [OSTI]

) and argillaceous matrices with low permeability (oil shale of Messel, Germany; Posidonienschiefer of Holzmaden the Eifel, Germany. Low 176 Lu/177 Hf ratios in all materials from the Middle Eocene Messel oil shale (e

Schöne, Bernd R.

134

Plasma etching of HfO{sub 2} at elevated temperatures in chlorine-based chemistry  

SciTech Connect (OSTI)

Plasma etching of HfO{sub 2} at an elevated temperature is investigated in chlorine-based plasmas. Thermodynamic studies are performed in order to determine the most appropriate plasma chemistry. The theoretical calculations show that chlorocarbon gas chemistries (such as CCl{sub 4} or Cl{sub 2}-CO) can result in the chemical etching of HfO{sub 2} in the 425-625 K temperature range by forming volatile effluents such as HfCl{sub 4} and CO{sub 2}. The etching of HfO{sub 2} is first studied on blanket wafers in a high density Cl{sub 2}-CO plasma under low ion energy bombardment conditions (no bias power). Etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rate as function of temperature follows an Arrhenius law indicating that the etching comes from chemical reactions. The etch rate of HfO{sub 2} is about 110 A /min at a temperature of 525 K with a selectivity towards SiO{sub 2} of 15. x-ray photoelectron spectroscopy analyses (XPS) reveal that neither carbon nor chlorine is detected on the HfO{sub 2} surface, whereas a chlorine-rich carbon layer is formed on top of the SiO{sub 2} surface leading to the selectivity between HfO{sub 2} and SiO{sub 2}. A drift of the HfO{sub 2} etch process is observed according to the chamber walls conditioning due to chlorine-rich carbon coatings formed on the chamber walls in a Cl{sub 2}-CO plasma. To get a very reproducible HfO{sub 2} etch process, the best conditioning strategy consists in cleaning the chamber walls with an O{sub 2} plasma between each wafer. The etching of HfO{sub 2} is also performed on patterned wafers using a conventional polysilicon gate. The first result show a slight HfO{sub 2} foot at the bottom of the gate and the presence of hafnium oxide-based residues in the active areas.

Helot, M.; Chevolleau, T.; Vallier, L.; Joubert, O.; Blanquet, E.; Pisch, A.; Mangiagalli, P.; Lill, T. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 rue des martyrs (CEA-LETI), 38054 Grenoble Cedex 09 (France); LTPCM/INPG-CNRS-UJF, 1130 rue de la piscine, 38402 Saint-Martin-d'Heres (France); Applied Materials, 974 E. Arques Ave. M/S 81334, Sunnyvale, California 94086 (United States)

2006-01-15T23:59:59.000Z

135

Subduction Controls of Hf and Nd Isotopes in Lavas of the Aleutian Island Arc  

SciTech Connect (OSTI)

The Hf and Nd isotopic compositions of 71 Quaternary lavas collected from locations along the full length of the Aleutian island arc are used to constrain the sources of Aleutian magmas and to provide insight into the geochemical behavior of Nd and Hf and related elements in the Aleutian subduction-magmatic system. Isotopic compositions of Aleutian lavas fall approximately at the center of, and form a trend parallel to, the terrestrial Hf-Nd isotopic array with {var_epsilon}{sub Hf} of +12.0 to +15.5 and {var_epsilon}{sub Nd} of +6.5 to +10.5. Basalts, andesites, and dacites within volcanic centers or in nearby volcanoes generally all have similar isotopic compositions, indicating that there is little measurable effect of crustal or other lithospheric assimilation within the volcanic plumbing systems of Aleutian volcanoes. Hafnium isotopic compositions have a clear pattern of along-arc increase that is continuous from the eastern-most locations near Cold Bay to Piip Seamount in the western-most part of the arc. This pattern is interpreted to reflect a westward decrease in the subducted sediment component present in Aleutian lavas, reflecting progressively lower rates of subduction westward as well as decreasing availability of trench sediment. Binary bulk mixing models (sediment + peridotite) demonstrate that 1-2% of the Hf in Aleutian lavas is derived from subducted sediment, indicating that Hf is mobilized out of the subducted sediment with an efficiency that is similar to that of Sr, Pb and Nd. Low published solubility for Hf and Nd in aqueous subduction fluids lead us to conclude that these elements are mobilized out of the subducted component and transferred to the mantle wedge as bulk sediment or as a silicate melt. Neodymium isotopes also generally increase from east to west, but the pattern is absent in the eastern third of the arc, where the sediment flux is high and increases from east to west, due to the presence of abundant terrigenous sediment in the trench east of the Amlia Fracture Zone, which is being subducting beneath the arc at Seguam Island. Mixing trends between mantle wedge and sediment end members become flatter in Hf-Nd isotope space at locations further west along the arc, indicating that the sediment end member in the west has either higher Nd/Hf or is more radiogenic in Hf compared to Nd. This pattern is interpreted to reflect an increase in pelagic clay relative to the terrigenous subducted sedimentary component westward along the arc. Results of this study imply that Hf does not behave as a conservative element in the Aleutian subduction system, as has been proposed for some other arcs.

Yogodzinski, Gene; Vervoort, Jeffery; Brown, Shaun Tyler; Gerseny, Megan

2010-08-29T23:59:59.000Z

136

High performance RF and baseband building blocks for wireless receivers  

E-Print Network [OSTI]

market has suddenly expanded to unimaginable dimensions. Devices such as pagers, cellular and cordless phones, cable modems, and RF identification (RFID) tags are rapidly penetrating all aspects of our lives, evolving from luxury items to indispensable...

Bahmani, Faramarz

2007-09-17T23:59:59.000Z

137

CMOS RF Power Amplifier Design for Wireless Communications  

E-Print Network [OSTI]

conjugate (S22) match (solid curve) and power match (dashedSupply Linear RF Power Amplifier", IEEE J. Solid-State Circ.Fully-integrated CMOS Power Amplifiers", IEEE J. Solid-State

FANG, Qiang

2012-01-01T23:59:59.000Z

138

Progress on the Mice 201 MNz RF Cavity at LBNL  

E-Print Network [OSTI]

like to thank people at LBNL EH&S and Main Machine Shop forMICE 201 MHz RF CAVITY AT LBNL* Tianhuan Luol, Don Summers,Virostek, Michael Zisman, LBNL, Berkeley, CA 94720, USA

Luo, Tianhuan

2014-01-01T23:59:59.000Z

139

Electrodeless lighting RF power source development. Final report  

SciTech Connect (OSTI)

An efficient, solid state RF power source has been developed on this NICE project for exciting low power electrodeless lamp bulbs. This project takes full advantage of concurrent advances in electrodeless lamp technology. Electrodeless lamp lighting systems utilizing the sulfur based bulb type developed by Fusion Lighting, Inc., is an emerging technology which is based on generating light in a confined plasma created and sustained by RF excitation. The bulb for such a lamp is filled with a particular element and inert gas at low pressure when cold. RF power from the RF source creates a plasma within the bulb which reaches temperatures approaching those of high pressure discharge lamp plasmas. At these temperatures the plasma radiates substantial visible light with a spectrum similar to sunlight.

NONE

1996-08-30T23:59:59.000Z

140

Rf System Requirements for JLab’s MEIC Collider Ring  

SciTech Connect (OSTI)

The Medium-energy Electron Ion Collider (MEIC), proposed by Jefferson Lab, consists of a series of accelerators. At the top energy are the electron and ion collider rings. For the ion ring, it accelerates five long ion bunches to colliding energy and rebunches ions into a train of very short bunches before colliding. A set of low frequency RF system is needed for the long ion bunch energy ramping. Another set of high frequency RF cavities is needed to rebunch ions. For the electron ring, superconducting RF (SRF) cavities are needed to compensate the synchrotron radiation energy loss. The impedance of the SRF cavities must be low enough to keep the high current electron beam stable. The preliminary design requirements of these RF cavities are presented.

Wang, Shaoheng [JLAB; Li, Rui [JLAB; Rimmer, Robert A. [JLAB; Wang, Haipeng [JLAB; Zhang, Yuhong [JLAB

2013-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


141

Recent Progress of RF Cavity Study at Mucool Test Area  

SciTech Connect (OSTI)

Summar of presentation is: (1) MTA is a multi task working space to investigate RF cavities for R&D of muon beam cooling channel - (a) Intense 400 MeV H{sup -} beam, (b) Handle hydrogen (flammable) gas, (c) 5 Tesla SC solenoid magnet, (d) He cryogenic/recycling system; (2) Pillbox cavity has been refurbished to search better RF material - Beryllium button test will be happened soon; (3) E x B effect has been tested in a box cavity - Under study (result seems not to be desirable); (4) 201 MHz RF cavity with SRF cavity treatment has been tested at low magnetic field - (a) Observed some B field effect on maximum field gradient and (b) Further study is needed (large bore SC magnet will be delivered end of 2011); and (5) HPRF cavity beam test has started - (a) No RF breakdown observed and (b) Design a new HPRF cavity to investigate more plasma loading effect.

Yonehara, Katsuya; /Fermilab

2011-12-02T23:59:59.000Z

142

DESIGN OF A DC/RF PHOTOELECTRON GUN.  

SciTech Connect (OSTI)

An integrated dc/rf photoelectron gun produces a low-emittance beam by first rapidly accelerating electrons at a high gradient during a short ({approx}1 ns), high-voltage pulse, and then injecting the electrons into an rf cavity for subsequent acceleration. Simulations show that significant improvement of the emittance appears when a high field ({approx} 0.5-1 GV/m) is applied to the cathode surface. An adjustable dc gap ({le} 1 mm) which can be integrated with an rf cavity is designed for initial testing at the Injector Test Stand at Argonne National Laboratory using an existing 70-kV pulse generator. Plans for additional experiments of an integrated dc/rf gun with a 250-kV pulse generator are being made.

YU,D.NEWSHAM,Y.SMIRONOV,A.YU,J.SMEDLEY,J.SRINIVASAN RAU,T.LEWELLEN,J.ZHOLENTS,A.

2003-05-12T23:59:59.000Z

143

BN/Graphene/BN Transistors for RF Applications  

E-Print Network [OSTI]

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched ...

Taychatanapat, Thiti

144

ANALYZING SURFACE ROUGHNESS DEPENDENCE OF LINEAR RF LOSSES  

SciTech Connect (OSTI)

Topographic structure on Superconductivity Radio Frequency (SRF) surfaces can contribute additional cavity RF losses describable in terms of surface RF reflectivity and absorption indices of wave scattering theory. At isotropic homogeneous extent, Power Spectrum Density (PSD) of roughness is introduced and quantifies the random surface topographic structure. PSD obtained from different surface treatments of niobium, such Buffered Chemical Polishing (BCP), Electropolishing (EP), Nano-Mechanical Polishing (NMP) and Barrel Centrifugal Polishing (CBP) are compared. A perturbation model is utilized to calculate the additional rough surface RF losses based on PSD statistical analysis. This model will not consider that superconductor becomes normal conducting at fields higher than transition field. One can calculate the RF power dissipation ratio between rough surface and ideal smooth surface within this field range from linear loss mechanisms.

Reece, Charles E. [JLAB; Kelley, Michael J. [JLAB, W& M College; Xu, Chen [JLAB, W& M College

2012-09-01T23:59:59.000Z

145

Test estructural i predictiu per a circuits RF CMOS.  

E-Print Network [OSTI]

??En aquesta tesi s'ha desenvolupat una tčcnica de test que permet testar un LNA i un mesclador, situats en el capçal RF d'un receptor CMOS,… (more)

Suenaga Portugués, Kay

2008-01-01T23:59:59.000Z

146

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

147

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

148

Measurement of current distribution on RF coils using MR imaging  

E-Print Network [OSTI]

MEASUREMENT OF CURRENT DISTRIBUTION ON RF COILS USING MR IMAGING A Thesis by YU WU Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE December... 1993 Major Subject' Electrical Engineering MEASUREMENT OF CURRENT DISTRIBUTION ON RF COILS USING MR IMAGING A Thesis by YU WU Submitted to Texas ASM University in partial fulfillment of the requirments for the degree of MASTER OF SCIENCE...

Wu, Yu

1993-01-01T23:59:59.000Z

149

RF-MEMS Switched Varactors for Medium Power Applications  

E-Print Network [OSTI]

In RF (Radio Frequency) domain, one of the limitations of using MEMS (Micro Electromechanical Systems) switching devices for medium power applications is RF power. Failure phenomena appear even for 500 mW. A design of MEMS switched capacitors with an enhanced topology is presented in this paper to prevent it. This kind of device and its promising performances will serve to fabricate a MEMS based phase shifter able to work under several watts.

Maury, F; Crunteanu, A; Conseil, F; Blondy, P

2008-01-01T23:59:59.000Z

150

R&D ERL: High power RF systems  

SciTech Connect (OSTI)

The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2.5 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

Zaltsman, A.

2010-01-15T23:59:59.000Z

151

High power RF systems for the BNL ERL project  

SciTech Connect (OSTI)

The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

Zaltsman, A.; Lambiase, R.

2011-03-28T23:59:59.000Z

152

COMPARISON OF RF CAVITY TRANSPORT MODELS FOR BBU SIMULATIONS  

SciTech Connect (OSTI)

The transverse focusing effect in RF cavities plays a considerable role in beam dynamics for low-energy beamline sections and can contribute to beam breakup (BBU) instability. The purpose of this analysis is to examine RF cavity models in simulation codes which will be used for BBU experiments at Jefferson Lab and improve BBU simulation results. We review two RF cavity models in the simulation codes elegant and TDBBU (a BBU simulation code developed at Jefferson Lab). elegant can include the Rosenzweig-Serafini (R-S) model for the RF focusing effect. Whereas TDBBU uses a model from the code TRANSPORT which considers the adiabatic damping effect, but not the RF focusing effect. Quantitative comparisons are discussed for the CEBAF beamline. We also compare the R-S model with the results from numerical simulations for a CEBAF-type 5-cell superconducting cavity to validate the use of the R-S model as an improved low-energy RF cavity transport model in TDBBU. We have implemented the R-S model in TDBBU. It will improve BBU simulation results to be more matched with analytic calculations and experimental results.

Ilkyoung Shin,Byung Yunn,Todd Satogata,Shahid Ahmed

2011-03-01T23:59:59.000Z

153

Characterization of Zr-Fe-Cu Alloys for an Inert Matrix Fuel for Nuclear Energy Applications  

E-Print Network [OSTI]

Cu had the largest melting temperature (886.3°C) while Zr-12Fe-10Cu had the smallest melting temperature (870°C). The third alloy, Zr-12Fe-15Cu, had a melting point just below that of Zr-12Fe-5Cu at 882.7°C. Light Flash Analysis (LFA...

Barnhart, Brian A.

2013-08-09T23:59:59.000Z

154

ccsd00001116 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys  

E-Print Network [OSTI]

ccsd­00001116 (version 1) : 4 Feb 2004 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys: from 4, 2004) Zr and Sc precipitate in aluminum alloys to form the compounds Al3Zr and Al3Sc which

155

RF-Plasma Source Commissioning in Indian Negative Ion Facility  

SciTech Connect (OSTI)

The Indian program of the RF based negative ion source has started off with the commissioning of ROBIN, the inductively coupled RF based negative ion source facility under establishment at Institute for Plasma research (IPR), India. The facility is being developed under a technology transfer agreement with IPP Garching. It consists of a single RF driver based beam source (BATMAN replica) coupled to a 100 kW, 1 MHz RF generator with a self excited oscillator, through a matching network, for plasma production and ion extraction and acceleration. The delivery of the RF generator and the RF plasma source without the accelerator, has enabled initiation of plasma production experiments. The recent experimental campaign has established the matching circuit parameters that result in plasma production with density in the range of 0.5-1x10{sup 18}/m{sup 3}, at operational gas pressures ranging between 0.4-1 Pa. Various configurations of the matching network have been experimented upon to obtain a stable operation of the set up for RF powers ranging between 25-85 kW and pulse lengths ranging between 4-20 s. It has been observed that the range of the parameters of the matching circuit, over which the frequency of the power supply is stable, is narrow and further experiments with increased number of turns in the coil are in the pipeline to see if the range can be widened. In this paper, the description of the experimental system and the commissioning data related to the optimisation of the various parameters of the matching network, to obtain stable plasma of required density, are presented and discussed.

Singh, M. J.; Bandyopadhyay, M.; Yadava, Ratnakar; Chakraborty, A. K. [ITER- India, Institute for Plasma Research, A-29, Sector 25, GIDC, Gandhinagar, Gujrat (India); Bansal, G.; Gahlaut, A.; Soni, J.; Kumar, Sunil; Pandya, K.; Parmar, K. G.; Sonara, J. [Institute for Plasma Research, Bhat Gandhinagar, Gujrat (India); Kraus, W.; Heinemann, B.; Riedl, R.; Obermayer, S.; Martens, C.; Franzen, P.; Fantz, U. [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching (Germany)

2011-09-26T23:59:59.000Z

156

In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

157

A New Environmentally Friendly AL/ZR-Based Clay Stabilizer  

E-Print Network [OSTI]

Clay stabilizers are means to prevent fines migration and clay swelling, which are caused by the contact of formation with low salinity or high pH brines at high temperature. Previous clay stabilizers including: Al and Zr compounds and cationic...

El-Monier, Ilham Abdallah

2013-01-18T23:59:59.000Z

158

Thermally-driven H interaction with HfO{sub 2} films deposited on Ge(100) and Si(100)  

SciTech Connect (OSTI)

In the present work, we investigated the thermally-driven H incorporation in HfO{sub 2} films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO{sub 2}/substrate interface region (at 300?°C) and through the whole HfO{sub 2} layer (400–600?°C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO{sub 2} films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

Soares, G. V., E-mail: gabriel.soares@ufrgs.br; Feijó, T. O. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Baumvol, I. J. R. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Aguzzoli, C. [Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Krug, C. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); CEITEC S.A., Porto Alegre 91550-000 (Brazil); Radtke, C. [Instituto de Química, UFRGS, Porto Alegre 91509-900 (Brazil)

2014-01-27T23:59:59.000Z

159

Correlation between corrosion performance and surface wettability in ZrTiCuNiBe bulk metallic glasses  

E-Print Network [OSTI]

Correlation between corrosion performance and surface wettability in ZrTiCuNiBe bulk metallic June 2010 The corrosion properties of two Zr-based bulk metallic glass, Zr41Ti14Cu12Ni10Be23 LM1 and Zr potential, LM1b showed superior corrosion resistance to LM1. Under identical sample preparation and testing

Zheng, Yufeng

160

Determination of the chemistry of HF acidizing with the use of {sup 19}F NMR spectroscopy  

SciTech Connect (OSTI)

A more thorough understanding of the chemistry of HF acid and its reaction products on silica and alumino-silicates is essential to the design and optimization of HF acidizing treatments. To more clearly define the chemistry of HF acidizing, an in-depth investigation of the reaction of HF and H{sub 2}SiF{sub 6} with alumino-silicates was undertaken using {sup 19}F Nuclear Magnetic Resonance (NMR) spectroscopy. In addition to the fluosilicic acid (H{sub 2}SiF{sub 6}) and AlF{sup 2+} predicted by traditional theories, {sup 19}F NMR spectroscopy shows a complex mixture of silicon and aluminum fluoride species in reacted HF acidizing solutions. During a secondary reaction of silicon fluorides with alumino-silicates, a constant F/Al ratio was maintained until the silicon fluorides had reacted completely. The distribution of the fluoride species depends on the HCl concentration. In this investigation, a tertiary reaction of HF acid on alumino-silicates was identified. When the silicon fluorides have reacted completely to give silica gel, the aluminum fluoride complexes continue to react on fresh alumino-silicates. The reaction causes the aluminum content to increase and the F/Al ratio and acid concentration to decrease. The final F/Al ratio is dependent upon acid strength and temperature. Numerous HF acidizing well returns have been analyzed to verify the reactions conducted in the laboratory. The extent of the reaction of HF acid can be determined with the use of {sup 19}F NMR spectroscopy. In wells with temperatures of 150 to 200 F, the reaction of H{sub 2}SiF{sub 6} is complete. Silicon content was quite low, and pH levels were 2 to 3. The F/Al ratios of the returns were 0.5 to 1.3, depending on the concentration of HCl and HF used in the treatment. In wells less than 100 F, the secondary reaction did not go to completion. Silicon and aluminum fluoride complexes were present in the returns along with live HCl.

Shuchart, C.E.; Buster, D.C.

1995-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Phase Stable RF-over-fiber Transmission using Heterodyne Interferometry  

SciTech Connect (OSTI)

New scientific applications require phase-stabilized RF distribution to multiple remote locations. These include phased-array radio telescopes and short pulse free electron lasers. RF modulated onto a CW optical carrier and transmitted via fiber is capable of low noise, but commercially available systems aren't long term stable enough for these applications. Typical requirements are for less than 50fs long term temporal stability between receivers, which is 0.05 degrees at 3GHz. Good results have been demonstrated for RF distribution schemes based on transmission of short pulses, but these require specialized free-space optics and high stability mechanical infrastructure. We report a method which uses only standard telecom optical and RF components, and achieves less than 20fs RMS error over 300m of standard single-mode fiber. We demonstrate stable transmission of 3GHz over 300m of fiber with less than 0.017 degree (17fs) RMS phase error. An interferometer measures optical phase delay, providing information to a feed-forward correction of RF phase.

Wilcox, R.; Byrd, J. M.; Doolittle, L.; Huang, G.; Staples, J. W.

2010-01-02T23:59:59.000Z

162

RF Power Upgrade for CEBAF at Jefferson Laboratory  

SciTech Connect (OSTI)

Jefferson Laboratory (JLab) is currently upgrading the 6GeV Continuous Electron Beam Accelerator Facility (CEBAF) to 12GeV. As part of the upgrade, RF systems will be added, bringing the total from 340 to 420. Existing RF systems can provide up to 6.5 kW of CW RF at 1497 MHZ. The 80 new systems will provide increased RF power of up to 13 kW CW each. Built around a newly designed and higher efficiency 13 kW klystron developed for JLab by L-3 Communications, each new RF chain is a completely revamped system using hardware different than our present installations. This paper will discuss the main components of the new systems including the 13 kW klystron, waveguide isolator, and HV power supply using switch-mode technology. Methodology for selection of the various components and results of initial testing will also be addressed. Notice: Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177. The U.S. Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce this manuscript for U.S. Government purposes.

Andrew Kimber,Richard Nelson

2011-03-01T23:59:59.000Z

163

805 MHz and 201 MHz RF cavity development for MUCOOL  

SciTech Connect (OSTI)

A muon cooling channel calls for very high acceleratinggradient RF structures to restore the energy lost by muons in theabsorbers. The RF structures have to be operated in a strong magneticfield and thus the use of superconducting RF cavities is excluded. Toachieve a high shunt impedance while maintaining a large enough apertureto accommodate a large transverse emittance muon beam, the cavity designadopted is a pillbox-like geometry with thin Be foils to terminate theelectromagnetic field at the cavity iris. The possibility of using gridsof thin-walled metallic tubes for the termination is also being explored.Many of the RF-related issues for muon cooling channels are being studiedboth theoretically and experimentally using an 805 MHz cavity that has apillbox-like geometry with thin Be windows to terminate the cavityaperture. The design and performance of this cavity are reported here.High-power RF tests of the 805 MHz cavity are in progress at Lab G inFermilab. The cavity has exceeded its design gradient of 30 MV/m,reaching 34 MV/m without external magnetic field. No surface damage wasobserved at this gradient. The cavity is currently under conditioning atLab G with an external magnetic field of 2.5 T. We also present here a201 MHz cavity design for muoncooling channels. The proposed cavitydesign is also suitable for use in a proof-of-principle Muon IonizationCooling Experiment (MICE).

DLi@lbl.gov

2002-10-10T23:59:59.000Z

164

Spectroscopic analysis of Al and N diffusion in HfO{sub 2}  

SciTech Connect (OSTI)

X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO{sub 2} and its interface with the Si substrate in (001)Si/SiO{sub x}/2 nm HfO{sub 2}/1 nm AlO{sub x} film structures. The diffusion of Al from the thin AlO{sub x} cap layer deposited on both annealed and unannealed HfO{sub 2} has been observed following anneal in N{sub 2} and NH{sub 3} ambient. Both N{sub 2} and NH{sub 3} subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO{sub 2} microstructure combined with the dependence of Al and N diffusion on initial HfO{sub 2} conditions are presented with respect to anneal temperature and ambient.

Lysaght, P. S.; Price, J.; Kirsch, P. D. [SEMATECH, 257 Fuller Rd, Albany, New York 12203 (United States); Woicik, J. C.; Weiland, C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Sahiner, M. A. [Seton Hall University, 400 South Orange Ave, South Orange, New Jersey 07079 (United States)

2012-09-15T23:59:59.000Z

165

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique  

SciTech Connect (OSTI)

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2014-03-24T23:59:59.000Z

166

Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition  

SciTech Connect (OSTI)

Hafnium silicate films were grown by alternating the deposition cycles of hafnium oxide and silicon oxide using a plasma enhanced atomic layer deposition process. The as-deposited and 900 deg. C annealed hafnium silicate films were determined to be amorphous using grazing incidence x-ray diffraction. This suggested that the formation of hafnium silicate suppressed the crystallization of HfO{sub 2} at high temperatures. The dielectric constants increased from {approx}5 to {approx}17 as the hafnium content increased from 9 to 17 at. % in the hafnium silicate films. The leakage currents through the Hf-rich Hf-silicate films were two to three orders of magnitude lower than that of SiO{sub 2} with the same equivalent oxide thickness in the range of 1.6-2.3 nm. The estimated band gap of Hf-silicate films from the O 1s plasma loss spectra increased with the increasing Si content due to the higher band gap of SiO{sub 2} than that of HfO{sub 2}.

Liu Jiurong; Martin, Ryan M.; Chang, Jane P. [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States)

2008-09-15T23:59:59.000Z

167

RF Pulse compression stabilization at the CTF3 CLIC test facility  

E-Print Network [OSTI]

In the CTF3 accelerator, the RF produced by each of ten 3 GHz klystrons goes through waveguides, RF pulse compressors and splitters. The RF phase and power transformation of these devices depend on their temperature. The quantitative effect of the room temperature variation on the RF was measured. It is the major source of undesired changes during the CTF3 operation. An RF phaseloop and a compressor temperature stabilization are developed to suppress the phase fluctuation and the power profile change due to the temperature variation. The implementation is transparent for operators, it does not limit anyhow the flexibility of RF manipulations. Expected and measured suppression characteristics will be given.

Dubrovskiy, Alexey

2010-01-01T23:59:59.000Z

168

Point defect energetics in the ZrNi and Zr2Ni intermetallics C.S. Moura a,b  

E-Print Network [OSTI]

and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802, USA c Materials Science-neighbor Zr atoms. Ă? 2001 Elsevier Science B.V. All rights reserved. 1. Introduction There has been great of these compounds is governed by the balance between the irradiation damage and the annealing response

Motta, Arthur T.

169

Precipitation in cold-rolled Al–Sc–Zr and Al–Mn–Sc–Zr alloys prepared by powder metallurgy  

SciTech Connect (OSTI)

The effects of cold-rolling on thermal, mechanical and electrical properties, microstructure and recrystallization behaviour of the AlScZr and AlMnScZr alloys prepared by powder metallurgy were studied. The powder was produced by atomising in argon with 1% oxygen and then consolidated by hot extrusion at 350 °C. The electrical resistometry and microhardness together with differential scanning calorimetry measurements were compared with microstructure development observed by transmission and scanning electron microscopy, X-ray diffraction and electron backscatter diffraction. Fine (sub)grain structure developed and fine coherent Al{sub 3}Sc and/or Al{sub 3}(Sc,Zr) particles precipitated during extrusion at 350 °C in the alloys studied. Additional precipitation of the Al{sub 3}Sc and/or Al{sub 3}(Sc,Zr) particles and/or their coarsening was slightly facilitated by the previous cold rolling. The presence of Sc,Zr-containing particles has a significant antirecrystallization effect that prevents recrystallization at temperatures minimally up to 420 °C. The precipitation of the Al{sub 6}Mn- and/or Al{sub 6}(Mn,Fe) particles of a size ? 1.0 ?m at subgrain boundaries has also an essential antirecrystallization effect and totally suppresses recrystallization during 32 h long annealing at 550 °C. The texture development of the alloys seems to be affected by high solid solution strengthening by Mn. The precipitation of the Mn-containing alloy is highly enhanced by a cold rolling. The apparent activation energy of the Al{sub 3}Sc particles formation and/or coarsening and that of the Al{sub 6}Mn and/or Al{sub 6}(Mn,Fe) particle precipitation in the powder and in the compacted alloys were determined. The cold deformation has no effect on the apparent activation energy values of the Al{sub 3}Sc-phase and the Al{sub 6}Mn-phase precipitation. - Highlights: • The Mn, Sc and Zr additions to Al totally suppresses recrystallization at 550 °C. • The Sc,Zr-containing particle precipitation is slightly facilitated by cold rolling. • The Mn-containing particle precipitation is highly enhanced by cold rolling. • Cold rolling has no effect on activation energy of the Al{sub 3}Sc and Al{sub 6}Mn precipitation. • The texture development is affected by high solid solution strengthening by Mn.

Vlach, M., E-mail: martin.vlach@mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, CZ-121 16 Prague (Czech Republic); Stulikova, I.; Smola, B.; Kekule, T.; Kudrnova, H.; Danis, S. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, CZ-121 16 Prague (Czech Republic); Gemma, R. [King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division, 23955-6900 Thuwal (Saudi Arabia); Ocenasek, V. [SVÚM a.s., Podnikatelská 565, CZ-190 11 Prague (Czech Republic); Malek, J. [Czech Technical University in Prague, Faculty of Mechanical Engineering, CZ-120 00 Prague (Czech Republic); Tanprayoon, D.; Neubert, V. [Institut für Materialprüfung und Werkstofftechnik, Freiberger Strasse 1, D-38678 Clausthal-Zellerfeld (Germany)

2013-12-15T23:59:59.000Z

170

Crystallization of Zr2PdxCu(1-x) and Zr2NixCu(1-x) Metallic Glass  

SciTech Connect (OSTI)

One interesting aspect of rretallic glasses is the numerous instances of the deviation of the phase selection from the amorphous state to thermodynamically stable phases during the crystallization process. Their devitrification pathways allow us to study the relationship between the original amorphous structure and their crystalline counter parts. Among the various factors of phase selections, size and electronic effects have been most extensively studied. Elucidating the phase selection process of a glassy alloy will be helpful to fill in the puzzle of the changes from disordered to ordered structures. In this thesis, Two model Zr{sub 2}Pd{sub x}Cu{sub (1-x)} and Zr{sub 2}Ni{sub x}Cu{sub (1-x)} (x = 0, 0.25, 0.5, 0.75 and 1) glassy systems were investigated since: (1) All of the samples can be made into a homogenous metallic glass; (2) The atomic radii differ from Pd to Cu is by 11%, while Ni has nearly the identical atomic size compare to Cu. Moreover, Pd and Ni differ by only one valence electron from Cu. Thus, these systems are ideal to test the idea of the effects of electronic structure and size factors; (3) The small number of components in these pseudo binary systems readily lend themselves to theoretical modeling. Using high temperature X-ray diffraction {HTXRD) and thermal analysis, topological, size, electronic, bond and chemical distribution factors on crystallization selections in Zr{sub 2}Pd{sub x}Cu{sub (1-x)} and Zr{sub 2}Ni{sub x}Cu{sub (1-x)} metallic glass have been explored. All Zr{sub 2}Pd{sub x}Cu{sub (1-x)} compositions share the same Cu11b phase with different pathways of meta-stable, icosahedral quasicrystalline phase (i-phase), and C16 phase formations. The quasicrystal phase formation is topologically related to the increasing icosahedral short range order (SRO) with Pd content in Zr{sub 2}Pd{sub x}Cu{sub (1·x)} system. Meta-stable C16 phase is competitive with C11b phase at x = 0.5, which is dominated by electronic structure rather than size effects. Cu-rich and Ni-rich compositions in Zr{sub 2}Ni{sub x}Cu{sub (1-x)} trend to divitrify to C11b or C16 phases respectively. In the proposed pseudo binary phase diagram, the domain of C16, C11b and co-existence phases are mainly related with the topology in the amorphous structure and formation enthalpies of crystalline phases.

Min Xu

2008-08-18T23:59:59.000Z

171

Theory and Practice of Cavity RF Test Systems  

SciTech Connect (OSTI)

Over the years Jefferson Lab staff members have performed about 2500 cold cavity tests on about 500 different superconducting cavities. Most of these cavities were later installed in 73 different cryomodules, which were used in three different accelerators. All of the cavities were tested in our vertical test area. About 25% of the cryomodules were tested in our cryomodule test facility and later commissioned in an accelerator. The remainder of the cryomodules were tested and commissioned after they were installed in their respective accelerator. This paper is an overview which should provide a practical background in the RF systems used to test the cavities as well as provide the mathematics necessary to convert the raw pulsed or continuous wave RF signals into useful information such as gradient, quality factor, RF-heat loads and loaded Q?s. Additionally, I will provide the equations necessary for determining the measurement error associated with these values.

Tom Powers

2006-08-28T23:59:59.000Z

172

HOM Coupler Optimisation for the Superconducting RF Cavities in ESS  

E-Print Network [OSTI]

The European Spallation Source (ESS) will be the world’s most powerful next generation neutron source. It consists of a linear accelerator, target, and instruments for neutron experiments. The linac is designed to accelerate protons to a ?nal energy of 2.5 GeV, with an average design beam power of 5 MW, for collision with a target used to produce a high neutron ?ux. A section of the linac will contain Superconducting RF (SCRF) cavities designed at 704 MHz. Beam induced HOMs in these cavities may drive the beam unstable and increase the cryogenic load, therefore HOM couplers are installed to provide suf?cient damping. Previous studies have shown that these couplers are susceptible to multipacting, a resonant process which can absorb RF power and lead to heating effects. This paper will show how a coupler suffering from multipacting has been redesigned to limit this effect. Optimisation of the RF damping is also discussed.

Ainsworth, R; Calaga, R

2012-01-01T23:59:59.000Z

173

A computer program for HVDC converter station RF noise calculations  

SciTech Connect (OSTI)

HVDC converter station operations generate radio frequency (RF) electromagnetic (EM) noise which could interfere with adjacent communication and computer equipment, and carrier system operations. A generic Radio Frequency Computer Analysis Program (RAFCAP) for calculating the EM noise generated by valve ignition of a converter station has been developed as part of a larger project. The program calculates RF voltages, currents, complex power, ground level electric field strength and magnetic flux density in and around an HVDC converter station. The program requires the converter station network to be represented by frequency dependent impedance functions. Comparisons of calculated and measured values are given for an actual HVDC station to illustrate the validity of the program. RAFCAP is designed to be used by engineers for the purpose of calculating the RF noise produced by the igniting of HVDC converter valves.

Kasten, D.G.; Caldecott, R.; Sebo, S.A. (Ohio State Univ., Columbus, OH (United States). Dept. of Electrical Engineering); Liu, Y. (Virginia Polytechnic Inst. State Univ., Blacksburg, VA (United States). Bradley Dept. of Electrical Engineering)

1994-04-01T23:59:59.000Z

174

Band offsets in HfO{sub 2}/InGaZnO{sub 4} heterojunctions  

SciTech Connect (OSTI)

The valence band discontinuity ({Delta}E{sub V}) of sputter deposited HfO{sub 2}/InZnGaO{sub 4} (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO{sub 2} exhibited a bandgap of 6.07 eV from absorption measurements. A value of {Delta}E{sub V} = 0.48 {+-} 0.025 eV was obtained by using the Ga 2p{sub 3/2}, Zn 2p{sub 3/2}, and In 3d{sub 5/2} energy levels as references. This implies a conduction band offset {Delta}E{sub C} of 2.39 eV in HfO{sub 2}/InGaZnO{sub 4} heterostructures and a nested interface band alignment.

Cho, Hyun [Department of Nanomechatronics Engineering, Pusan National University, Gyeongnam 627-706 (Korea, Republic of); Douglas, E. A.; Gila, B. P.; Craciun, V.; Lambers, E. S.; Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren Fan [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2012-01-02T23:59:59.000Z

175

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

176

On the K{sup {pi}} = 0{sup +} rotational bands in the {sup 178}Hf nucleus  

SciTech Connect (OSTI)

The results obtained by studying the angular distributions of gamma rays with respect to the neutron-beam axis in the reaction {sup 178}Hf(n, n'{gamma}) involving the deexcitation of the K{sup {pi}} = 0{sup +} rotational bands of {sup 178}Hf are presented.New information about themultipole-mixing parameter {delta} in gamma transitions from the levels of these bands is obtained. The K{sup {pi}} = 0{sub 4}{sup +} band is constructed anew. The relationship between the parameter {delta} for the (2{sup +}0{sub n}-2{sup +}0{sub 1}) gamma transition and the energy gap {Delta}{sub n} = E{sub lev}(2{sup +}0{sub n}) - E{sub lev}(0{sup +}0{sub n}), on one hand, and the quasiparticle structure of the rotational band, on the other hand, is discussed for {sup 178}Hf on the basis of the quasiparticle-phonon model.

Govor, L. I.; Demidov, A. M.; Kurkin, V. A., E-mail: kurkin@polyn.kiae.su; Mikhailov, I. V. [Russian Research Centre Kurchatov Institute (Russian Federation)

2010-07-15T23:59:59.000Z

177

The MuCool Test Area and RF Program  

SciTech Connect (OSTI)

The MuCool RF Program focuses on the study of normal conducting RF structures operating in high magnetic field for applications in muon ionization cooling for Neutrino Factories and Muon Colliders. This paper will give an overview of the program, which will include a description of the test facility and its capabilities, the current test program, and the status of a cavity that can be rotated in the magnetic field which allows for a more detailed study of the maximum stable operating gradient vs. magnetic field strength and angle.

Bross, A D; Jansson, A; Moretti, A; Yonehara, K; Huang, D; Torun, Y; Li, D; Norem, J; Palmer, R B; Stratakis, D

2010-05-01T23:59:59.000Z

178

The Los Alamos VXI-based modular RF control system  

SciTech Connect (OSTI)

This paper describes the design and implementation of the Los Alamos modular RF control system, which provides high-performance feedback and/or feedforward control of RF accelerator cavities. This is a flexible, modular control system which has been realized in the industry-standard VXI cardmodular format. A wide spectrum of system functionality can be accommodated simply by incorporating only those modules and features required for a particular application. The fundamental principles of the design approach are discussed. Details of the VXI implementation are given, including the system architecture and interfaces, performance capabilities, and available features.

Jachim, S.P.; Ziomek, C.; Natter, E.F.; Regan, A.H.; Hill, J.; Eaton, L.; Gutscher, W.D.; Curtin, M.; Denney, P.; Hansberry, E.; Brooks, T.

1993-06-01T23:59:59.000Z

179

The Los Alamos VXI-based modular RF control system  

SciTech Connect (OSTI)

This paper describes the design and implementation of the Los Alamos modular RF control system, which provides high-performance feedback and/or feedforward control of RF accelerator cavities. This is a flexible, modular control system which has been realized in the industry-standard VXI cardmodular format. A wide spectrum of system functionality can be accommodated simply by incorporating only those modules and features required for a particular application. The fundamental principles of the design approach are discussed. Details of the VXI implementation are given, including the system architecture and interfaces, performance capabilities, and available features.

Jachim, S.P.; Ziomek, C.; Natter, E.F.; Regan, A.H.; Hill, J.; Eaton, L.; Gutscher, W.D.; Curtin, M.; Denney, P.; Hansberry, E.; Brooks, T.

1993-01-01T23:59:59.000Z

180

Plasma Acceleration from RF Discharge in Dielectric Capillary  

SciTech Connect (OSTI)

Plasma acceleration from rf discharge in dielectric capillary was demonstrated. Observed plasma flow had ion energies of approximately 100 eV and electron energies of approximately 20 eV. The discharge was powered by a MHz-range rf generator and fed by Ar. Experimental results indicate possible validity of assumptions about formation of a potential difference at the open end of the capillary and presence of hot electron fraction in the capillary discharge. Simplicity and small dimensions of the source are attractive for micro-propulsion applications.

A. Dunaevsky; Y. Raitses; N. J. Fisch

2005-08-09T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2  

E-Print Network [OSTI]

-resolved electron energy loss spectroscopy (EELS) and energy-dispersive spectrometry (EDS). HfOxNy gate dielectrics a replacement for SiO2 as the gate dielectric material. HfO2 is a promising candidate due to its high dielectric constant its stability on Si. However, crystallization temperatures of less than 500 °C and high impurity

Ng, Wai Tung

182

CONCEPTUAL DESIGN OF A BRIGHT ELECTRON INJECTOR BASED ON A LASER-DRIVEN PHOTOCATHODE RF ELECTRON GUN  

E-Print Network [OSTI]

Photocathode RF Electron Gun S. Chattopadhyay, Y.J. Chen, D.PHOTOCATHODE RF ELECTRON GUN' S. Chnttopndhyny. Y.J. Chen (Photocathode RF Electron Gun S. Chattopadhyay, Y.I. Chen, D.

Chattopadhyay, S.

2010-01-01T23:59:59.000Z

183

Two-step behavior of initial oxidation at HfO{sub 2}/Si interface  

SciTech Connect (OSTI)

In situ x-ray photoelectron spectroscopy revealed that initial Si oxidation at the HfO{sub 2}/Si(001) interface in O{sub 2} proceeds in a two-step manner with an initial slow stage followed by a fast one. This transition in the oxidation process is most likely caused by crystallization of the HfO{sub 2} film. The first stage at 400-600 deg. C exhibited postdeposition annealing conditions suitable for suppressing the interfacial Si oxide in a monolayer region.

Miyata, Noriyuki [MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562 (Japan)

2006-09-04T23:59:59.000Z

184

Triaxial strongly deformed bands in {sup 164}Hf and the effect of elevated yrast line  

SciTech Connect (OSTI)

Two exotic rotational bands have been identified in {sup 164}Hf and linked to known states. They are interpreted as being associated with the calculated triaxial strongly deformed (TSD) potential energy minimum. The bands are substantially stronger and are located at much lower spins than the previously discovered TSD bands in {sup 168}Hf. In addition to the proton and neutron shell gaps at large trixiality, it was proposed that the relative excitation energy of TSD bands above the yrast line plays an important role in the population of TSD bands.

Ma Wenchao [Department of Physics, Mississippi State University, Mississippi State, MS 39762 (United States)

2012-10-20T23:59:59.000Z

185

Comparison of electromagnetic, thermal and mechanical calculations with rf test results in rf-dipole deflecting/crabbing cavities  

SciTech Connect (OSTI)

The current requirements of higher gradients and strict dimensional constraints in the emerging applications have required the designing of compact deflecting and crabbing rf structures. The superconducting rf-dipole cavity is one of the first novel compact designs with attractive properties such as higher gradients, higher shunt impedance and widely separated higher order modes. The recent tests performed on proof-of-principle designs of the rf-dipole geometry at 4.2 K and 2.0 K in the vertical test area at Jefferson Lab have proven the designs to achieve higher gradients with higher intrinsic quality factors and easily processed multipacting conditions. The cavity characteristics, such as pressure sensitivity and Lorentz force detuning, were studied using ANSYS before the fabrication. These characteristics were measured during the cavity test. The comparison between the simulation and the measurement provides insight how the simulation can be used for design and fabrication of future cavities.

Park, HyeKyoung [JLAB, ODU; De Silva, Subashini U. [ODU; Delayen, Jean R. [ODU, JLAB

2013-12-01T23:59:59.000Z

186

E-Print Network 3.0 - angle rf pulses Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

pulse operating on M: RFx pulse operating on FZ: RF pulses K-Space Scheffler 1999: PDF... " cos() 2 sin2 ( 2) 1st 1st RF pulse 12;E. Wong, BE278, UCSD Winter 2011...

187

Advances in Filter Miniaturization and Design/Analysis of RF MEMS Tunable Filters  

E-Print Network [OSTI]

The main purpose of this dissertation was to address key issues in the design and analysis of RF/microwave filters for wireless applications. Since RF/microwave filters are one of the bulkiest parts of communication systems, their miniaturization...

Sekar, Vikram

2012-10-19T23:59:59.000Z

188

Advances in Broadband RF Sensing for Real-time Control of Plasma-Based Semiconductor Processing  

E-Print Network [OSTI]

to standard RF metrology. The system uses an antenna in the glow discharge to excite the bulk plasma identification of process conditions for standard RF sensing, and 99:5 correct identification of process

Grizzle, Jessy W.

189

E-Print Network 3.0 - accelerating rf station Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

by a 1.25-T -decay channel with phase-rotation via rf (to compress... to beam tests; Test 70-MHz rf cavity (+ 1.25-T magnet) 3 m from target; Characterize ... Source:...

190

High-power ELF radiation generated by modulated HF heating of the ionosphere can cause Earthquakes, Cyclones and localized heating  

E-Print Network [OSTI]

High-power ELF radiation generated by modulated HF heating of the ionosphere can cause Earthquakes, the HAARP heater is the most powerful ionospheric heater, with 3.6GW of effective power using HF heating, Cyclones and localized heating Fran De Aquino Maranhao State University, Physics Department, S

Paris-Sud XI, Université de

191

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks  

E-Print Network [OSTI]

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

Misra, Durgamadhab "Durga"

192

MEDIUM POWER 352 MHZ SOLID STATE PULSED RF AMPLIFIERS FOR THE CERN LINAC4 PROJECT  

E-Print Network [OSTI]

MEDIUM POWER 352 MHZ SOLID STATE PULSED RF AMPLIFIERS FOR THE CERN LINAC4 PROJECT J. Broere, J in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6

Paris-Sud XI, Université de

193

Photoemission study of energy-band alignment for RuO{sub x}/HfO{sub 2}/Si system  

SciTech Connect (OSTI)

Conductive oxides RuO{sub x} as alternative electrode on high-{kappa} HfO{sub 2} gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuO{sub x}/HfO{sub 2}/Si system and the oxidation-state dependence of barrier height for RuO{sub x} contacting to HfO{sub 2} dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO{sub 2}/Si are determined to be 3.05{+-}0.1 and 1.48{+-}0.1 eV, respectively. The barrier heights for the RuO{sub x} contacting to HfO{sub 2} are oxidation-state dependent, in the range of 1.95-2.73 eV.

Li, Q.; Wang, S.J.; Li, K.B.; Huan, A.C.H.; Chai, J.W.; Pan, J.S.; Ong, C.K. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore and Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

2004-12-20T23:59:59.000Z

194

Low-temperature method for enhancing sputter-deposited HfO{sub 2} films with complete oxidization  

SciTech Connect (OSTI)

A low-temperature method, supercritical CO{sub 2} fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO{sub 2}) film at 150 deg. C without significant formation of parasitic oxide at the interface between HfO{sub 2} and Si substrate. In this research, the HfO{sub 2} films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H{sub 2}O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO{sub 2} film is only 5 A ring thick. Additionally, the enhancements in the qualities of sputter-deposited HfO{sub 2} film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement.

Tsai, C.-T.; Chang, T.-C.; Liu, P.-T.; Yang, P.-Y.; Kuo, Y.-C.; Kin, K.-T.; Chang, P.-L.; Huang, F.-S. [Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China); Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-Hai Road, Kaohsiung 804, Taiwan (China); Department of Photonics and Display Institute, National Chiao Tung University, 1001 Ta-Hsueh Rd., HsinChu 300, Taiwan (China); Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan (China); Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China)

2007-07-02T23:59:59.000Z

195

Development of RF CMOS receiver front-ends for ultrawideband  

E-Print Network [OSTI]

demonstrates two different solutions for the RF front-end designs in the UWB receivers, one is distributed topology, and the other is based on traditional lumped element topology. The distributed amplifier is one of the attractive candidates for UWB Low Noise...

Guan, Xin

2009-05-15T23:59:59.000Z

196

Superfluid helium cryogenic systems for superconducting RF cavities at KEK  

SciTech Connect (OSTI)

Recent accelerator projects at KEK, such as the Superconducting RF Test Facility (STF) for R and D of the International Linear Collider (ILC) project and the compact Energy Recovery Linac (cERL), employ superconducting RF cavities made of pure niobium, which can generate high gradient acceleration field. Since the operation temperature of these cavities is selected to be 2 K, we have developed two 2 K superfluid helium cryogenic systems for stable operation of superconducting RF cavities for each of STF and cERL. These two 2 K superfluid helium cryogenic systems are identical in principle. Since the operation mode of the cavities is different for STF and cERL, i.e. the pulse mode for STF and the continuous wave mode for cERL, the heat loads from the cavities are quite different. The 2 K superfluid helium cryogenic systems mainly consists of ordinary helium liquefiers/refrigerators, 2 K refrigerator cold boxes, helium gas pumping systems and high-performance transfer lines. The 2 K refrigerators and the high-performance transfer lines are designed by KEK. Some superconducting RF cavity cryomodules have been already connected to the 2 K superfluid helium cryogenic systems for STF and cERL respectively, and cooled down to 2 K successfully.

Nakai, H.; Hara, K.; Honma, T.; Hosoyama, K.; Kojima, Y.; Nakanishi, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0033 (Japan); Kanekiyo, T. [Hitachi Plant Technologies, Ltd., Toshima-ku, Tokyo 170-8466 (Japan); Morita, S. [Hitachi Plant Mechanics Co., Ltd., Kudamatsu, Yamaguchi 744-0061 (Japan)

2014-01-29T23:59:59.000Z

197

COLLISIONLESS ELECTRON HEATING IN RF GAS DISCHARGES: I. QUASILINEAR THEORY  

E-Print Network [OSTI]

COLLISIONLESS ELECTRON HEATING IN RF GAS DISCHARGES: I. QUASILINEAR THEORY Yu.M. Aliev1 , I an interest in mechanisms of electron heating and power deposition in the plasma main- tained by radio parameters. Due to the large value of the mean free path (MFP) the main mechanism of electron heating turns

Kaganovich, Igor

198

Feedback Configuration Tools for LHC Low Level RF  

SciTech Connect (OSTI)

The LHC Low Level RF System (LLRF) is a complex multi-VME crate system which is used to regulate the superconductive cavity gap voltage as well as to lower the impedance as seen by the beam through low latency feedback. This system contains multiple loops with several parameters to be set before the loops can be closed. In this paper, we present a suite of MATLAB based tools developed to perform the preliminary alignment of the RF stations and the beginnings of a closed loop model based alignment routine. We briefly introduce the RF system and in particular the base band (time domain noise based) network analyzer system built into the LHC LLRF. The main focus of this paper is the methodology of the algorithms used by the routines within the context of the overall system. Measured results are presented that validate the technique. Because the RF systems are located in a cavern 120 m underground in a location which is relatively un-accessible without beam and completely un-accessible with beam present or magnets are energized, these remotely operated tools are a necessity for the CERN LLRF team to maintain and tune their LLRF systems in a similar fashion as to what was done very successfully in PEP-II at SLAC.

Van Winkle, D.; Fox, J.; Mastorides, T.; Rivetta, C.; /SLAC; Baudrenghien, P.; Butterworth, A.; Molendijk, J.; /CERN

2009-12-16T23:59:59.000Z

199

RF power potential of 45 nm CMOS technology  

E-Print Network [OSTI]

This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with ...

Putnam, Christopher

200

Novel Reactor Relevant RF Actuator Schemes for the Lower  

E-Print Network [OSTI]

location for RF launchers · Transport in tokamak sends heat and particles to low field side SOL: ­ Forces reactor is challenging: ­ Survivability is a major issue because of the harsh environment high heat solution that both mitigates PMI / coupling problems and improves core wave physics issues. #12;Reactor

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201

Beyond ITER: RF Heating and Current Drive Issues for DEMO  

E-Print Network [OSTI]

control Need to operate reliably in a high power flux, high radiation, and "steady state" nuclear lose 10% or more power to edge / vessel ­ Minimal diagnostic support for RF edge interactions systems do not yet run for extended time periods #12;Facilities that provide a DEMO-relevant testing

Princeton Plasma Physics Laboratory

202

Multiband Antenna-Receiver Integration using an RF Multiplexer with Sensitivity-Constrained Design  

E-Print Network [OSTI]

S.M. Shajedul Hasan (hasan@vt.edu) Steven Ellingson (ellingson@vt.edu) RF Multiplexer Hasan be largely mitigated by: · Implementing design to be robust to variations RF Multiplexer Hasan / Ellingson #12;Motivation (2/2) Focus of this paper System Diagram of the prototype MMR RF Multiplexer Hasan

Ellingson, Steven W.

203

Multiband Antenna-Receiver Integration using an RF Multiplexer with Sensitivity-Constrained Design  

E-Print Network [OSTI]

S.M. Hasan and S. W. Ellingson Wireless at Virginia Tech RF Multiplexer Hasan / Ellingson ­ July 10 be largely mitigated by: 2/14 RF Multiplexer Hasan / Ellingson ­ July 10, 2008 RFIC from Motorola Research (2/2) Focus of this paper System Diagram of the prototype MMR 3/14 RF Multiplexer Hasan / Ellingson

Ellingson, Steven W.

204

Identification of Residual Stress State in an RF-MEMS Device  

E-Print Network [OSTI]

of wafer level tests. The membrane is part of an RF MEMS Switch man- ufactured by Raytheon Systems Co) and 3D numerical simulations. THE RAYTHEON'S RF MEMS SWITCH The RF MEMS switch technology developed by Raytheon Systems Co. provides advantageous characteristics for communication circuits by virtue of its

Espinosa, Horacio D.

205

Meridian-scanning photometer, coherent HF radar, and magnetometer observations of the cusp: a case study  

E-Print Network [OSTI]

the transport of mass, energy, and momentum from the solar wind into the near-Earth environment, is facilitated with the CUTLASS Finland coherent HF radar, a meridian-scanning photometer located at Ny AĂ? lesund, Svalbard on the scale of minutes, and which are believed to be related to the dynamic nature of energy and momentum

Paris-Sud XI, Université de

206

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

207

Scanning tunneling microscopy study of nitrogen incorporated HfO{sub 2}  

SciTech Connect (OSTI)

The impact of nitrogen incorporation on the physical and electrical characteristics of the HfO{sub 2} is examined. X-ray photoelectron spectroscopy shows that nitrogen can be incorporated into the HfO{sub 2} via a two-step thermal anneal--first in ultrahigh vacuum (UHV) and subsequently in N{sub 2}. Following the N{sub 2} anneal, scanning tunneling microscopy in UHV reveals a marked reduction in the low-voltage leakage current under gate injection biasing. From band theory and existing first-principles simulation results, one may consistently attribute this improvement to the passivation of oxygen vacancies in the HfO{sub 2} by nitrogen. Improvement in the breakdown strength of the HfO{sub 2} subjected to ramp-voltage stress (substrate injection) is also observed after the N{sub 2} anneal. The local current-voltage curves acquired concurrently during the ramp-voltage stress exhibit 'space-charge limited conduction', which implies that the observed improvement in breakdown strength may be related to a limitation of the current flow through the gate stack in the high stress voltage regime.

Ong, Y. C.; Ang, D. S.; Pey, K. L.; Li, X. [Nanyang Technological University, School of Electrical and Electronic Engineering, Nanyang Avenue, Singapore 639798 (Singapore); O'Shea, S. J.; Wang, S. J. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 11760 (Singapore); Tung, C. H. [Institute of Microelectronics, A-STAR - Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)

2008-09-15T23:59:59.000Z

208

Investigation of HF plasma turbulence excitation and dissipation in the vicinity of 5th  

E-Print Network [OSTI]

of stimulated electromagnetic emission (SEE) of the ionosphere pumped by powerful HF radio waves are presented, Uppsala Division, SE-751 21 Uppsala, Sweden Experimental results on development and relaxation times after PW turn off d 0.7­1.0 ms are 2­4 times faster than collisional ones for the Langmuir waves

209

Oxygen diffusion and reactions in Hf-based dielectrics L. V. Goncharova,a  

E-Print Network [OSTI]

Oxygen diffusion and reactions in Hf-based dielectrics L. V. Goncharova,a M. Dalponte, D. G Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen

Gustafsson, Torgny

210

HF radar in French Mediterranean Sea: an element of MOOSE Mediterranean Ocean Observing System on Environment  

E-Print Network [OSTI]

Sea in the context of climate change and anthropogenic pressure and to supply and maintain longHF radar in French Mediterranean Sea: an element of MOOSE Mediterranean Ocean Observing System , Pascal Guterman2 , Karim Bernardet2 1 Mediterranean Institute of Oceanography (MIO, UM 110, USTV

Boyer, Edmond

211

Elevated temperature ablation resistance of HfC particle-reinforced tungsten composites  

E-Print Network [OSTI]

C­W was attributed to the low thermal conductivity, high oxidation resistance, and high melting point of the Hf melting points (e.g., 3440 °C for W), high moduli of elasticity, good thermal shock resistances, and good torch was used to ablate the samples at high temperature. Ablation resistance improved with an in

Hong, Soon Hyung

212

Comparative Analysis of Carbon Plasma in Arc and RF Reactors  

SciTech Connect (OSTI)

Results on studies of molecular spectra emitted in the initial stages of fullerene formation during the processing of graphite powder in induction RF reactor and evaporation of graphite electrodes in arc reactor are presented in this paper. It was found that C2 radicals were dominant molecular species in both plasmas. C2 radicals have an important role in the process of fullerene synthesis. The rotational-vibrational temperatures of C2 and CN species were calculated by fitting the experimental spectra to the simulated ones. The results of optical emission study of C2 radicals generated in carbon arc plasma have shown that rotational temperature of C2 species depends on carbon concentration and current intensity significantly. The optical emission study of induction RF plasma and SEM analysis of graphite powder before and after plasma treatment have shown that evaporation of the processed graphite powder depends on feed rate and composition of gas phase significantly. Based on the obtained results, it was concluded that in the plasma region CN radicals could be formed by the reaction of C2 species with atomic nitrogen at smaller loads. At larger feed rate of graphite powder, CN species were produced by surface reaction of the hot carbon particles with nitrogen atoms. The presence of nitrogen in induction RF plasma reduces the fullerene yield significantly. The fullerene yield obtained in two different reactors was: 13% in arc reactor and 4.1% in induction RF reactor. However, the fullerene production rate was higher in induction RF reactor-6.4 g/h versus 1.7 g/h in arc reactor.

Todorovic-Markovic, B.; Markovic, Z. ['Vinca' Institute of Nuclear Sciences, P.O.B. 522, 11001 Belgrade (Serbia and Montenegro); Mohai, I.; Szepvolgyi, J. [Research Laboratory of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences H-1525 Budapest, POB 17 (Hungary)

2004-12-01T23:59:59.000Z

213

Control of silicidation in HfO2/Si,,100... interfaces Deok-Yong Cho, Kee-Shik Park, B.-H. Choi,a  

E-Print Network [OSTI]

like nitrogen.6,7 Among these, Hf-silicide is probably most detrimental since it is metallic and degrades the capacitor performance. Metal- lic Hf-silicide formation has been reported in the interfaceControl of silicidation in HfO2/Si,,100... interfaces Deok-Yong Cho, Kee-Shik Park, B.-H. Choi

Oh, Se-Jung

214

Identification of phases in the interaction layer between U-Mo-Zr/Al and U-Mo-Zr/Al-Si  

SciTech Connect (OSTI)

Out-of-pile diffusion experiments were performed between U-7wt.% Mo-1wt.% Zr and Al or Al A356 (7,1wt.% Si) at 550 deg. C. In this work morphological characterization and phase identification on both interaction layer are presented. They were carried out by the use of different techniques: optical and scanning electron microscopy, X-Ray diffraction and WDS microanalysis. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al, the phases UAl{sub 3}, UAl{sub 4}, Al{sub 20}Mo{sub 2}U and Al{sub 43}Mo{sub 4}U{sub 6} were identified. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al A356, the phases U(Al, Si) with 25at.% Si and Si{sub 5}U{sub 3} were identified. This last phase, with a higher Si concentration, was identified with XRD Synchrotron radiation performed at the National Synchrotron Light Laboratory (LNLS), Campinas, Brasil. (author)

Varela, C.L. Komar; Arico, S.F.; Mirandou, M.; Balart, S.N. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); Gribaudo, L.M. [Departamento Materiales, GIDAT, GAEN, CNEA, Avda. Gral Paz 1499, B1650KNA, San Martin (Argentina); CONICET, Avda. Rivadavia 1917, C1033AAJ, Buenos Aires (Argentina)

2008-07-15T23:59:59.000Z

215

Crystallization and glass formation in electron and laser beam irradiated Cu-Zr alloys  

SciTech Connect (OSTI)

Four Cu-Zr alloys, Cu/sub 56/Zr/sub 44/, Cu/sub 50/Zr/sub 50/, Cu/sub 47/Zr/sub 53/, and Cu/sub 33/Zr/sub 67/, were surface melted with electron and pulsed laser beams to compare their kinetics of nucleation, growth and glass formation. It was observed that the ease of glass formation increased in the order: Cu/sub 33/Zr/sub 67/, Cu/sub 47/Zr/sub 53/, Cu/sub 56/Zr/sub 44/, and Cu/sub 50/Zr/sub 50/. The nucleation and regrowth produced different metastable phases. At the equiatomic composition, the preferred phase is a CsCl-type (B2) BCC structure. As the composition deviates from this, the preferred phase is either orthorhombic or tetragonal with a much larger unit cell not previously reported in the literature. The maximum growth velocity of these metastable phases was found to be about 0.025 m/s. The slow kinetics are responsible for the ease of glass formation in these systems. 4 refs., 7 figs., 2 tabs.

Huang, J.S.; Kaufmann, E.N.; Wall, M.A.; Olsen, B.L.

1987-11-01T23:59:59.000Z

216

E-Print Network 3.0 - application zr-sn alloys Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

used... , Zr, Sn, ... Source: Zheng, Yufeng - Department of Advanced Materials and Nanotechnology, Peking University Collection: Materials Science ; Biology and Medicine 2...

217

Nitrogen Doping and Thermal Stability in HfSiOxNy Studied by Photoemission and X-ray Absorption Spectroscopy  

SciTech Connect (OSTI)

We have investigated nitrogen-doping effects into HfSiO{sub x} films on Si and their thermal stability using synchrotron-radiation photoemission and x-ray absorption spectroscopy. N 1s core-level photoemission and N K-edge absorption spectra have revealed that chemical-bonding states of N-Si{sub 3-x}O{sub x} and interstitial N{sub 2}-gas-like features are clearly observed in as-grown HfSiO{sub x}N{sub y} film and they decrease upon ultrahigh vacuum (UHV) annealing due to a thermal instability, which can be related to the device performance. Annealing-temperature dependence in Hf 4f and Si 2p photoemission spectra suggests that the Hf-silicidation temperature is effectively increased by nitrogen doping into the HfSiO{sub x} although the interfacial SiO{sub 2} layer is selectively reduced. No change in valence-band spectra upon UHV annealing suggests that crystallization of the HfSiO{sub x}N{sub y} films is also hindered by nitrogen doping into the HfSiO{sub x}.

Toyoda, Satoshi; Okabayashi, Jun; Takahashi, Haruhiko; Oshima, Masaharu; /Tokyo U.; Lee, Dong-Ick; Sun, Shiyu; sun, Steven; Pianetta, Piero A.; /SLAC, SSRL; Ando, Takashi; Fukuda, Seiichi; /SONY, Atsugi

2005-12-14T23:59:59.000Z

218

Interfacial reaction induced phase separation in La{sub x}Hf{sub y}O films  

SciTech Connect (OSTI)

Amorphous La{sub x}Hf{sub y}O films containing La at concentrations (x) of 50 and 20% were prepared by atomic layer deposition on ultrathin SiO{sub 2} films (1 nm). We examined the electronic structures and microstructures of the La{sub x}Hf{sub y}O films by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD). Phase separation into La{sub 2}O{sub 3} and HfO{sub 2} was observed in the La{sub x}Hf{sub y}O films subjected to annealing temperatures over 900 deg. C, although the mixture of La{sub 2}O{sub 3} and HfO{sub 2} is thermodynamically stable. The structural changes that occurred as the result of phase separation were dependent on the concentrations of La and Hf in the films. During the annealing treatment, silicate was produced due to interfacial reactions and the interfacial reactions were found to be dependent on the La{sub 2}O{sub 3} content in the La{sub x}Hf{sub y}O films, which has a significant influence on the phase separation process and resulting film structure.

Ma, J. W.; Lee, W. J.; Cho, M.-H. [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, K. M.; Sohn, H. C. [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, C. S. [Korea Research Institute of Standards and Science, Daejeon 305-540 (Korea, Republic of); Cho, H. J. [Process Development Team, Semiconductor R and D Center, Samsung Electronics Co., LTD, Gyeonggi-Do 449-711 (Korea, Republic of)

2011-06-15T23:59:59.000Z

219

A low temperature fabrication of HfO{sub 2} films with supercritical CO{sub 2} fluid treatment  

SciTech Connect (OSTI)

To improve the dielectric properties of sputter-deposited hafnium oxide (HfO{sub 2}) films, the supercritical CO{sub 2} (SCCO{sub 2}) fluid technology is introduced as a low temperature treatment. The ultrathin HfO{sub 2} films were deposited on p-type (100) silicon wafer by dc sputtering at room temperature and subsequently treated with SCCO{sub 2} fluids at 150 deg. C to diminish the traps in the HfO{sub 2} films. After SCCO{sub 2} treatment, the interfacial parasitic oxide between the Si substrate and HfO{sub 2} layer is only about 5 A, and the oxygen content of the HfO{sub 2} films apparently increased. From current-voltage (I-V) and capacitance-voltage (C-V) measurements, the leakage current density of the SCCO{sub 2}-treated HfO{sub 2} films is repressed from 10{sup -2} to 10{sup -7} A/cm{sup 2} at electric field=3 MV/cm due to the reduction of traps in the HfO{sub 2} films. The equivalent oxide thickness also obviously decreased. Besides, the efficiency of terminating traps is relative to the pressure of the SCCO{sub 2} fluids.

Tsai, C.-T.; Huang, F.-S. [Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China); Chang, T.-C. [Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-set University, 70 Lien-hai Road, Kaohsiung 804, Taiwan (China); Institute of Electro-Optical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan (China); Kin, K.-T. [Industrial Technology Research Institute-Energy and Environment Research Laboratories, Hsinchu 300, Taiwan (China); Liu, P.-T.; Yang, P.-Y. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan (China); Weng, C.-F. [Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-set University, 70 Lien-hai Road, Kaohsiung 804, Taiwan (China)

2008-04-01T23:59:59.000Z

220

Induction heating of FeCo nanoparticles for rapid rf curing of epoxy K. J. Miller,1,a  

E-Print Network [OSTI]

, and cracking of the polymer. An alternative curing process involves remote, noncontact rf heating of MNP loadedInduction heating of FeCo nanoparticles for rapid rf curing of epoxy composites K. J. Miller,1,a K epoxy composites through radio-frequency rf heating. The rf response of functionalized FeCo MNPs

McHenry, Michael E.

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Free electron laser using Rf coupled accelerating and decelerating structures  

DOE Patents [OSTI]

A free electron laser and free electron laser amplifier using beam transport devices for guiding an electron beam to a wiggler of a free electron laser and returning the electron beam to decelerating cavities disposed adjacent to the accelerating cavities of the free electron laser. Rf energy is generated from the energy depleted electron beam after it emerges from the wiggler by means of the decelerating cavities which are closely coupled to the accelerating cavities, or by means of a second bore within a single set of cavities. Rf energy generated from the decelerated electron beam is used to supplement energy provided by an external source, such as a klystron, to thereby enhance overall efficiency of the system.

Brau, Charles A. (Los Alamos, NM); Swenson, Donald A. (Los Alamos, NM); Boyd, Jr., Thomas J. (Los Alamos, NM)

1984-01-01T23:59:59.000Z

222

Performance of Magnesium Cathode in the S Band RF Gun  

SciTech Connect (OSTI)

In this paper, we present the preliminary results of the performance of magnesium cathode in a high frequency RF gun. The quantum efficiency of magnesium showed a dramatic improvement upon laser cleaning, increasing from 10{sup -5} to 4x10{sup -4} after two hours of cleaning. The spatial uniformity of emission also improved from a spot to spot variation of 10 to a variation of 2. Measurements with charges >1 nC indicate that the transient variation of the field due to the shielding effect of the electron in the vicinity of the cathode may play a critical role in the efficient extraction of electrons. Comprehensive theory that includes the electron emission in the presence of a time dependent Schottky effect and RF effects will be discussed.

Srinivasan-Rao, T.; /Brookhaven; Palmer, D.T.; /SLAC; Ben-Zvi, I.; /Brookhaven; Miller, R.H.; /SLAC; Wang, X.J.; Woodle, M.; /Brookhaven

2011-09-01T23:59:59.000Z

223

RF generation in the DARHT Axis-II beam dump  

SciTech Connect (OSTI)

We have occasionally observed radio-frequency (RF) electromagnetic signals in the downstream transport (DST) of the second axis linear induction accelerator (LIA) at the dual-axis radiographic hydrodynamic testing (DARHT) facility. We have identified and eliminated some of the sources by eliminating the offending cavities. However, we still observe strong RF in the range 1 GHz t0 2 GHz occurring late in the {approx}2-{micro}s pulse that can be excited or prevented by varying the downstream tune. The narrow frequency width (<0.5%) and near exponential growth at the dominant frequency is indicative of a beam-cavity interaction, and electro-magnetic simulations of cavity structure show a spectrum rich in resonances in the observed frequency range. However, the source of beam produced RF in the cavity resonance frequency range has not been identified, and it has been the subject of much speculation, ranging from beam-plasma or beam-ion instabilities to unstable cavity coupling.

Ekdahl, Carl A. Jr. [Los Alamos National Laboratory

2012-05-03T23:59:59.000Z

224

1 -SUBTIDAL 2 -INTERTIDAL RB ROCK UB UNCONSOLIDATED AB AQUATIC BED RF -REEF OW -OPEN WATER/ AB AQUATIC BED RF REEF RS ROCKY SHORE US -UNCONSOLIDATED  

E-Print Network [OSTI]

M - MARINE 1 - SUBTIDAL 2 - INTERTIDAL RB ­ ROCK UB ­ UNCONSOLIDATED AB ­ AQUATIC BED RF - REEF OW - OPEN WATER/ AB ­ AQUATIC BED RF­ REEF RS ­ ROCKY SHORE US - UNCONSOLIDATED BOTTOM BOTTOM Unknown Bottom ­ UNCONSOLIDATED AB ­ AQUATIC RF ­ REEF OW - OPEN WATER/ AB ­ AQUATIC RF­ REEF SB ­ STREAMBED RS - ROCKY US

Gray, Matthew

225

Report on Characterization of U-10 wt.% Zr Alloy  

SciTech Connect (OSTI)

This report summarizes the chemical and structural characterization results for a U-10 wt.% Zr alloy to be used in an ultra-high burn-up nuclear fuel concept. The as-cast alloy material was received from Texas A and M University. Characterization and an initial heat treatment of the alloy material were conducted at Lawrence Livermore National Laboratory. The as-received ingot was sectioned for X-ray analysis, metallography, SEM, TEM, and heat treatments, as shown in Figure 1.

McKeown, J; Wall, M; Hsiung, L; Turchi, P

2012-03-01T23:59:59.000Z

226

Isoscalar Breathing Mode State in Zr-90 and Sn-116  

E-Print Network [OSTI]

PHYSICAL RKVIK% C VOLUIHE 21, NUMBER 4 Isoscalar breathing mode state in Zr and "Sn C. M. Rozsa, D. H. Youngblood, J. D. Bronson, Y.-%. Lui, and U. Garg Cyclotron Institute, Texas AckM University, College Station, Texas 77843 (Received 5..., BRONSON, LUI, AND GARG larger opening and served to catch some particles scattered from the first set. For measurements at 0', the beam was passed into the spectrograph and one set of brass defining slits with an open- ing of 6.4' horizontally by 3.V...

Rozsa, C. M.; Youngblood, David H.; Bronson, J. D.; Lui, YW; Garg, U.

1980-01-01T23:59:59.000Z

227

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal structures  

E-Print Network [OSTI]

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal-04843 (Metals Program) and Praveen Sinha Fund for Physics Research. L12 DO22 DO23 Cu3Au Al3Ti Al3Zr #12;Outline · Indium was doped in samples of Al3V and Al3Ti (Al3Ti structure) and Al3Zr (Al3Zr structure) by arc

Collins, Gary S.

228

Atomistic Studies of Cation Transport in Tetragonal ZrO2 During Zirconium Corrosion  

SciTech Connect (OSTI)

Zirconium alloys are the major fuel cladding materials in current reactors. The water-side corrosion is one of the major degradation mechanisms of these alloys. During corrosion the transport of oxidizing species in zirconium dioxide (ZrO2) determines the corrosion kinetics. Previously it has been argued that the outward diffusion of cation ions is important for forming protective oxides. In this work, the migration of Zr defects in tetragonal ZrO2 is studied with temperature accelerated dynamics and molecular dynamics simulations. The results show that Zr interstitials have anisotropic diffusion and migrate preferentially along the [001] or c direction in tetragonal ZrO2. The compressive stresses can increase the Zr interstitial migration barrier significantly. The migration barriers of some defect clusters can be much lower than those of point defects. The migration of Zr interstitials at some special grain boundaries is much slower than in a bulk oxide. The implications of these atomistic simulation results in the Zr corrosion are discussed.

Xian-Ming Bai; Yongfeng Zhang; Michael R. Tonks

2013-10-01T23:59:59.000Z

229

Transformation plasticity and thermoelastic behavior in ZrO2-containing ceramics  

E-Print Network [OSTI]

565 Transformation plasticity and thermoelastic behavior in ZrO2-containing ceramics A. H. Heuer plasticité de transformation dans ZrO2, qui est responsable de la ré- sistance mécanique et de la grande profit. Dans certaines conditions, cette transformation est réversible, autocatalytique et

Paris-Sud XI, Université de

230

Electronic properties of InP (001)/HfO{sub 2} (001) interface: Band offsets and oxygen dependence  

SciTech Connect (OSTI)

Using ab-initio methods, atomic structures and electronic properties of InP (001)/HfO{sub 2} (001) interface are studied within the framework of density functional theory. We examine the InP/HfO{sub 2} model interface electronic structures under varying oxidation conditions. The effects of indium and phosphorous concentrations on interfacial bonding, defect states, band offsets, and the thermodynamic stability at the interface are also investigated. The origin of interfacial gap states in InP (001)/HfO{sub 2} (001) interface are proposed, mainly from the P-rich oxides, which is validated by our experimental work. This highlights the importance of surface passivation prior to high-? deposition based on the in situ spectroscopic results of atomic layer deposition of HfO{sub 2} on InP.

KC, Santosh; Dong, Hong; Longo, Roberto C.; Xiong, Ka [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Weichao [Department of Electronics and Microelectronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Wallace, Robert M.; Cho, Kyeongjae, E-mail: kjcho@utdallas.edu [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-01-14T23:59:59.000Z

231

Initial phases in sputter deposited HfO{sub 2}-Al{sub 2}O{sub 3} nanolaminate films  

SciTech Connect (OSTI)

Nanolaminate films of crystalline HfO{sub 2} and amorphous Al{sub 2}O{sub 3} were grown by reactive sputter deposition on unheated fused SiO{sub 2} and the surface oxide of <111> Si. X-ray diffraction showed the amount of monoclinic (m) HfO{sub 2} decreased with decreasing HfO{sub 2} layer thickness, consistent with a finite crystal size effect. High resolution transmission electron microscopy of individual crystallites detected tetragonal (t) and orthorhombic (o) HfO{sub 2} as the initial phases formed. Whereas the t{yields}m transition is accomplished by a shear mechanism, we demonstrate the important role of polysynthetic twinning for the o{yields}m transition.

Hoppe, E. E.; Aita, C. R.; Gajdardziska-Josifovska, M. [Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States); Department of Physics and Laboratory for Surface Studies, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2007-11-12T23:59:59.000Z

232

Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO{sub 2} matrix  

SciTech Connect (OSTI)

We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO{sub 2} high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8 nm in diameter were clearly embedded in HfO{sub 2} matrix. Capacitance-voltage measurements of Pt/HfO{sub 2}/Au NPs/HfO{sub 2} on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7 V. In addition, the charge retention time at room temperature was found to exceed 10{sup 5} h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.

Yang, Jung Yup; Kim, Ju Hyung; Choi, Won Joon; Do, Young Ho; Kim, Chae Ok; Hong, Jin Pyo [New Functional Materials and Devices Laboratory, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

2006-09-15T23:59:59.000Z

233

Shape memory response and microstructural evolution of a severe plastically deformed high temperature shape memory alloy (NiTiHf)  

E-Print Network [OSTI]

NiTiHf alloys have attracted considerable attention as potential high temperature Shape Memory Alloy (SMA) but the instability in transformation temperatures and significant irrecoverable strain during thermal cycling under constant stress remains a...

Simon, Anish Abraham

2006-04-12T23:59:59.000Z

234

EFFECT OF AGING ON THE PHASE TRANSFORMATION AND MECHANICAL BEHAVIOR OF Ti36Ni49Hf15 HIGH  

E-Print Network [OSTI]

and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China (Received August 19 the microstructure, transformation temperature, mechanical properties and shape memory effects (SMEs) for Ti36Ni49Hf

Zheng, Yufeng

235

Human Factors Process Failure Mode and Effects Analysis (HF PFMEA) Application in the Evaluation of Management Risks  

E-Print Network [OSTI]

.3.1. Mechanisms of Prevention ............................................................................................... 11 2.4. Human Factors Process Failure Mode and Effects Analysis (HF PFMEA) ....................... 11 2.5. FMEA Components... ........................................................................................... 15 2.5.5. Risk Priority Number ....................................................................................................... 17 2.6. FMEA Model...

Soguilon, Nenita M.

2009-12-18T23:59:59.000Z

236

Mode specificity in the HF + OH ? F + H{sub 2}O reaction  

SciTech Connect (OSTI)

Full-dimensional quantum dynamics and quasi-classical trajectory calculations are reported for the title reaction on a recently constructed ab initio based global potential energy surface. Strong mode specificity was found, consistent with the prediction of the sudden vector projection model. Specifically, the HF vibration strongly promotes the reaction while the OH vibration has little effect. Rotational excitations of both reactants slightly enhance the reaction.

Song, Hongwei; Li, Jun; Guo, Hua, E-mail: hguo@unm.edu [Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2014-10-28T23:59:59.000Z

237

Reactive ion beam etching of HfO{sub 2} film and removal of sidewall redeposition  

SciTech Connect (OSTI)

Comparative studies on ion beam etching (IBE) and reactive ion beam etching (RIBE) of HfO{sub 2} film have been carried out using photoresist as the masking layer. The etching rates of HfO{sub 2} film and photoresist mask in pure Ar and Ar/CHF{sub 3} mixture plasmas were measured as a function of ion energy, plasma composition, and ion beam incident angle. It has been found that the RIBE with Ar/CHF{sub 3} plasma is capable of lowering the threshold energy of ion beam and increasing sputtering yield, compared to the IBE with pure Ar. The redeposition of photoresist sidewall is a major issue, due to the formation of nonvolatile etching products during sputtering of HfO{sub 2} film in both IBE and RIBE. However, the sidewall redeposition can be easily removed in HCl solutions with assistance of ultrasonic wave for RIBE with Ar/CHF{sub 3} plasma. Alternatively, the sidewall redeposition can be eliminated by controlling the slope of photoresist sidewall or combined with ion incident angle.

Wang Xudi; Liu Ying; Xu Xiangdong; Fu Shaojun; Cui Zheng [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China) and School of Mechanical and Automobile Engineering, Hefei University of Technology, Hefei 230009 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China); Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)

2006-07-15T23:59:59.000Z

238

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

239

Impact of titanium addition on film characteristics of HfO{sub 2} gate dielectrics deposited by atomic layer deposition  

SciTech Connect (OSTI)

The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO{sub 2}, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO{sub 2} becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO{sub 2}. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (V{sub fb}) shift in the HfO{sub 2} films with low Ti content when compared with the HfO{sub 2} films. This indicates less charge trapping with a small amount of Ti addition.

Triyoso, D.H.; Hegde, R.I.; Zollner, S.; Ramon, M.E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B.E. Jr.; Tobin, P.J. [Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

2005-09-01T23:59:59.000Z

240

Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing  

SciTech Connect (OSTI)

Nitrogen incorporation in HfO{sub 2}/SiO{sub 2} films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO{sub 2} blanket films deposited by atomic layer deposition on either SiO{sub 2} or NH{sub 3} treated Si (100) substrates have been subjected to NH{sub 3} and N{sub 2} anneal processing. Several high resolution techniques including electron microscopy with electron energy loss spectra, grazing incidence x-ray diffraction, and synchrotron x-ray photoelectron spectroscopy have been utilized to elucidate chemical composition and crystalline structure differences between samples annealed in NH{sub 3} and N{sub 2} ambients as a function of temperature. Depth profiling of core level binding energy spectra has been obtained by using variable kinetic energy x-ray photoelectron spectroscopy with tunable photon energy. An 'interface effect' characterized by a shift of the Si{sup 4+} feature to lower binding energy at the HfO{sub 2}/SiO{sub 2} interface has been detected in the Si 1s spectra; however, no corresponding chemical state change has been observed in the Hf 4f spectra acquired over a broad range of electron take-off angles and surface sensitivities. The Si 2p spectra indicate Si-N bond formation beneath the HfO{sub 2} layer in the samples exposed to NH{sub 3} anneal. The NH{sub 3} anneal ambient is shown to produce a metastable Hf-N bond component corresponding to temperature driven dissociation kinetics. These findings are consistent with elemental profiles across the HfO{sub 2}/Si(100) interface determined by electron energy loss spectroscopy measurements. X-ray diffraction measurements on similarly treated films identify the structural changes resulting from N incorporation into the HfO{sub 2} films.

Lysaght, Patrick S.; Barnett, Joel; Bersuker, Gennadi I.; Woicik, Joseph C.; Fischer, Daniel A.; Foran, Brendan; Tseng, Hsing-Huang; Jammy, Raj [Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States)

2007-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Etching characteristics of high-k dielectric HfO{sub 2} thin films in inductively coupled fluorocarbon plasmas  

SciTech Connect (OSTI)

Inductively coupled fluorocarbon (CF{sub 4}/Ar and C{sub 4}F{sub 8}/Ar) plasmas were used to etch HfO{sub 2}, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO{sub 2} in CF{sub 4}/Ar plasmas exceeded those in C{sub 4}F{sub 8}/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO{sub 2} can be chemically etched by fluorine-containing species. In C{sub 4}F{sub 8}/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO{sub 2} increased with increasing bias power. The etch rate of Si, however, decreased with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO{sub 2}/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO{sub 2}/Si selectivity in C{sub 4}F{sub 8}/Ar plasmas.

Takahashi, Kazuo; Ono, Kouichi; Setsuhara, Yuichi [Department of Aeronautics and Astronautics, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

2005-11-15T23:59:59.000Z

242

Development of an RF Conditioning System for Charged-Particle Accelerators  

SciTech Connect (OSTI)

Charged-particle accelerators use various vacuum windows on their accelerating radio-frequency (RF) cavities to throughput very high RF power. Before being placed on the cavities, the windows should be cleaned, baked, and fully RF conditioned to prevent a poor vacuum from outgassing, as well as other forms of contamination. An example is the coaxial fundamental power coupler (FPC) with an annular alumina ceramic window for each of the 81 superconducting RF cavities in the Spallation Neutron Source (SNS) linear accelerator. The FPCs needed to be tested up to 650-kW peak in a traveling wave and 2.6 MW with standing wave peaks in 1.3 and 60 pulses/s at 805 MHz. In this paper, an Experimental-Physics-and-Industrial-Control-System-based RF conditioning system for the SNS RF test facility is presented. This paper summarizes the hardware and software design strategies, provides the results obtained, and describes the future research scope.

Kang, Yoon W [ORNL; Howlader, Mostofa [ORNL; Shajedul Hasan, Dr. S. M. [Virginia Polytechnic Institute and State University (Virginia Tech)

2008-01-01T23:59:59.000Z

243

Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film  

SciTech Connect (OSTI)

The effects of plasma treatment using Ar, N{sub 2}, and O{sub 2} on the removal of crystallized HfO{sub 2} films in a dilute HF solution were studied. The resulting damage in source and drain regions, and recess in isolation regions were also investigated. It was found that plasma nitridation with an ion energy of several hundred electron volts can lower the wet etch resistance of crystallized HfO{sub 2} films up to 70 A thick through the generation of Hf-N bonds. However, thermal nitridation did not introduce sufficient nitrogen into bulk crystallized HfO{sub 2} films to lower wet etch resistance. Plasma nitridation without bias power introduced nitrogen to the crystallized HfO{sub 2} in the region only within 10 A of the surface. The enhancement of the etch rate of crystallized HfO{sub 2} in dilute HF and the amount of recess in the active and isolation regions using N{sub 2}, O{sub 2}, and Ar plasma treatment have been evaluated. Results show that N{sub 2} plasma treatment is the most effective in enhancing the removal rate of crystallized HfO{sub 2} in dilute HF and minimizing recess on substrate among the plasmas studied.

Chen Jinghao; Yoo, Won Jong; Chan, Daniel S.H. [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2006-01-15T23:59:59.000Z

244

Production and decay properties of the 1.9-s isomeric state in {sup 261}Rf  

SciTech Connect (OSTI)

The 1.9-s isomeric state ({sup 261}Rf{sup b}) in {sup 261}Rf was directly populated in the {sup 248}Cm({sup 18}O,5n){sup 261}Rf{sup b} reaction. Alpha and spontaneous fission (SF) decays of {sup 261}Rf{sup b}, as well as the 68-s state {sup 261}Rf{sup a}, was investigated with a rotating wheel apparatus under low background conditions attained by a gas-jet transport system coupled to the RIKEN gas-filled recoil ion separator. An identification of {sup 261}Rf{sup b} was based on {alpha}-{alpha} correlations linking {alpha} decays of {sup 261}Rf{sup b} and its daughter {sup 257}No. The {alpha}-particle energy of {sup 261}Rf{sup b} was measured to be 8.52 {+-} 0.05 MeV. The half-life was determined to be 1.9 {+-} 0.4 s based on both 8.52-MeV {alpha} and SF decays. The {alpha} and SF branches are 0.27 {+-} 0.06 and 0.73 {+-} 0.06, respectively. The cross section for the {sup 248}Cm({sup 18}O,5n){sup 261}Rf{sup b} reaction is {sigma}({sup 261}Rf{sup b}) = 11 {+-} 2 nb at 95.1 MeV, which gives a cross-section ratio of {sigma}({sup 261}Rf{sup a})/{sigma}({sup 261}Rf{sup b}) = 1.1 {+-} 0.2.

Haba, H.; Kaji, D.; Kikunaga, H.; Kudou, Y.; Morimoto, K.; Morita, K.; Ozeki, K.; Sumita, T.; Yoneda, A.; Kasamatsu, Y.; Komori, Y.; Ooe, K.; Shinohara, A. [Nishina Center for Accelerator-Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan)

2011-03-15T23:59:59.000Z

245

New SLED 3 system for Multi-mega Watt RF compressor  

E-Print Network [OSTI]

A compact X band SLED is introduced for X band RF compressing application. This SLED compressor consists two major parts: a rectangular to circular waveguide converter and an overmoded spherical cavity. The RF compressor is designed to convert 50 magawatt X band RF power with pulse length 1.5 microseconds and deliver 200 megawatts with pulse length 106 nanoseconds to the X band accelerating structure.

Xu, Chen; Tantawi, Sami

2014-01-01T23:59:59.000Z

246

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches  

DOE Patents [OSTI]

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

2013-01-15T23:59:59.000Z

247

RF heating systems evolution for the WEST project  

SciTech Connect (OSTI)

Tore Supra is dedicated to long pulse operation at high power, with a record in injected energy of 1 GJ (2.8 MW × 380 s) and an achieved capability of 12 MW injected power delivered by 3 RF systems: Lower Hybrid Current Drive (LHCD), Ion Cyclotron Resonance Heating (ICRH) and Electron Cyclotron Resonance Heating (ECRH). The new WEST project (W [tungsten] Environment in Steady-state Tokamak) aims at fitting Tore Supra with an actively cooled tungsten coated wall and a bulk tungsten divertor. This new device will offer to ITER a test bed for validating the relevant technologies for actively cooled metallic components, with D-shaped H-mode plasmas. For WEST operation, different scenarii able to reproduce ITER relevant conditions in terms of steady state heat loads have been identified, ranging from a high RF power scenario (15 MW, 30 s) to a high fluence scenario (10 MW, 1000 s). This paper will focus on the evolution of the RF systems required for WEST. For the ICRH system, the main issues are its ELM resilience and its CW compatibility, three new actively cooled antennas are being designed, with the aim of reducing their sensitivity to the load variations induced by ELMs. The LH system has been recently upgraded with new klystrons and the PAM antenna, the possible reshaping of the antenna mouths is presently studied for matching with the magnetic field line in the WEST configuration. For the ECRH system, the device for the poloidal movement of the mirrors of the antenna is being changed for higher accuracy and speed.

Magne, R.; Achard, J.; Armitano, A.; Argouarch, A.; Berger-By, G.; Bernard, J. M.; Bouquey, F.; Charabot, N.; Colas, L.; Corbel, E.; Delpech, L.; Ekedahl, A.; Goniche, M.; Guilhem, D.; Hillairet, J.; Jacquot, J.; Joffrin, E.; Litaudon, X.; Lombard, G.; Mollard, P. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); and others

2014-02-12T23:59:59.000Z

248

MHD simulation of RF current drive in MST  

SciTech Connect (OSTI)

Auxiliary heating and current drive using RF waves such as the electron Bernstein wave (EBW) promises to advance the performance of the reversed field pinch (RFP). In previous computational work [1], a hypothetical edge-localized current drive is shown to suppress the tearing activity which governs the macroscopic transport properties of the RFP. The ideal conditions for tearing stabilization include a reduced toroidal induction, and precise width and radial position of the Gaussian-shaped external current drive. In support of the EBW experiment on the Madison Symmetric Torus, an integrated modeling scheme now incorporates ray tracing and Fokker-Plank predictions of auxiliary current into single fluid MHD. Simulations at low Lundquist number (S ? 10{sup 4}) generally agree with the previous work; significantly more burdensome simulations at MST-like Lundquist number (S ? 3×10{sup 6}) show unexpected results. The effect on nonlinearly saturated current profile by a particular RF-driven external force decreases in magnitude and widens considerably as the Lundquist number increases toward experimental values. Simulations reproduce the periodic current profile relaxation events observed in experiment (sawteeth) in the absence of current profile control. Reduction of the tearing mode amplitudes is still observable; however, reduction is limited to periods between the large bursts of magnetic activity at each sawtooth. The sawtoothing pattern persists with up to 10 MW of externally applied RF power. Periods with prolonged low tearing amplitude are predicted with a combination of external current drive and a reduced toroidal loop voltage, consistent with previous conclusions. Finally, the resistivity profile is observed to have a strong effect on the optimal externally driven current profile for mode stabilization.

Hendries, E. R.; Anderson, J. K.; Forest, C. B.; Reusch, J. A.; Seltzman, A. H.; Sovinec, C. R. [University of Wisconsin, Madison WI (United States); Diem, S. [Oak Ridge National Laboratory, Oak Ridge TN (United States); Harvey, R. W. [CompX, Del Mar, CA (United States)

2014-02-12T23:59:59.000Z

249

Study of AC/RF properties of SRF ingot niobium  

SciTech Connect (OSTI)

In an attempt to correlate the performance of superconducting radiofrequency cavities made of niobium with the superconducting properties, we present the results of the magnetization and ac susceptibility of the niobium used in the superconducting radiofrequency cavity fabrication. The samples were subjected to buffer chemical polishing (BCP) surface and high temperature heat treatments, typically applied to the cavities fabrications. The analysis of the results show the different surface and bulk ac conductivity for the samples subjected to BCP and heat treatment. Furthermore, the RF surface impedance is measured on the sample using a TE011 microwave cavity for a comparison to the low frequency measurements.

Dhakal, Pashupati; Tsindlekht, Menachem I.; Genkin, Valery M.; Ciovati, Gianluigi; Myneni, Ganapati Rao

2013-09-01T23:59:59.000Z

250

The modeling of RF stacking of protons in the Accumulator  

SciTech Connect (OSTI)

When the Run2 collider program is terminated in 2009, the present pbar source will be available for other usages. One possible application is to convert the Antiproton Accumulator to a proton accumulator so that the beam power from the Main Injector could be greatly enhanced [1]. The Accumulator has the unique feature of very large momentum acceptance. It is possible to stack 3-4 Booster batches in the longitudinal phase space before transferring them to the Main Injector or Recycler. This note shows the simulation of RF stacking using the code ESME [2].

Yoon, Phil S.; /Fermilab /Rochester U.; McGinnis, David P.; Chou, Weiren; /Fermilab

2005-06-01T23:59:59.000Z

251

Fabrication Processes for the PEP II RF Cavities  

SciTech Connect (OSTI)

This paper presents the major steps used in the fabrication of the 26 RF Cavities required for the PEP-II B-factory. Several unique applications of conventional processes have been developed and successfully implemented: electron beam welding (EBW), with minimal porosity, of .75 inch (19 mm) copper cross-sections; extensive 5-axis milling of water channels; electroplating of .37 inch (10 mm) thick OFE copper; tuning of the cavity by profiling beam noses prior to final joining with the cavity body; and machining of the cavity interior, are described here.

Franks, R.Mark; /LLNL, Livermore; Rimmer, Robert A.; /LBL, Berkeley; Schwarz, Heinz; /SLAC

2011-09-01T23:59:59.000Z

252

THERMAL MODELING OF ION EXCHANGE COLUMNS WITH SPHERICAL RF RESIN  

SciTech Connect (OSTI)

Models have been developed to simulate the thermal performance of RF columns fully loaded with radioactive cesium. Temperature distributions and maximum temperatures across the column were calculated during Small Column Ion Exchange (SCIX) process upset conditions with a focus on implementation at Hanford. A two-dimensional computational modeling approach was taken to include conservative, bounding estimates for key parameters such that the results will provide the maximum centerline temperatures achievable under the design configurations using a feed composition known to promote high cesium loading on RF. The current full-scale design for the SCIX system includes a central cooling tube, and one objective of these calculations was to examine its elimination to simplify the design. Results confirmed that a column design without a central cooling tube is feasible for RF, allowing for the possibility of significant design simplifications if it can be assumed that the columns are always filled with liquid. With active cooling through the four outer tubes, the maximum column diameter expected to maintain the temperature below the assumed media and safety limits is 26 inches, which is comparable to the current design diameter. Additional analysis was conducted to predict the maximum column temperatures for the previously unevaluated accident scenario involving inadvertent drainage of liquid from a cesium-saturated column, with retention of the ion exchange media and cesium in the column. As expected, much higher maximum temperatures are observed in this case due to the poor heat transfer properties of air versus liquid. For this hypothetical accident scenario involving inadvertent and complete drainage of liquid from a cesium-saturated column, the modeling results indicate that the maximum temperature within a 28 inch diameter RF column with external cooling is expected to exceed 250 C within 2 days, while the maximum temperature of a 12 inch column is maintained below 100 C. In addition, the calculation results demonstrate that the cooling tube system external to an air-filled column is not highly effective at reducing the maximum temperature, but the baseline design using a central cooling tube inside the column provides sufficient cooling to maintain the maximum temperature near the assumed safety limit.

Lee, S.; King, W.

2009-12-30T23:59:59.000Z

253

Beam dynamics studies for transverse electromagnetic mode type rf deflectors  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

We have performed three-dimensional simulations of beam dynamics for transverse electromagnetic mode (TEM) type rf deflectors: normal and superconducting. The compact size of these cavities as compared to the conventional TM110 type structures is more attractive particularly at low frequency. Highly concentrated electromagnetic fields between the parallel bars provide strong electrical stability to the beam for any mechanical disturbance. An array of six 2-cell normal conducting cavities or a single cell superconducting structure is enough to produce the required vertical displacement at the target point. Both the normal and superconducting structures show very small emittance dilution due to the vertical kick of the beam.

Ahmed, Shahid; Krafft, Geoffrey A.; Deitrick, Kirsten; De Silva, Subashini U.; Delayen, Jean R.; Spata, Mike; Tiefenback, Michael; Hofler, Alicia; Beard, Kevin

2012-02-01T23:59:59.000Z

254

Frequency and amplitude control for an experimental linac rf drive  

E-Print Network [OSTI]

, India Chair of Advisory Committee: Dr. S. P. Bhattacharyya, The Texas Accelerator Center (TAC) experimental linear accelerator uses a radio- frequency quadrupole (RFQ) to accelerate a 10 mA beam of H ions to 500 keV. It is to be used as an injector... to form a high-energy input beam for large circular accelerators. The pulsed beam will require 100 kW peak rf power at 473 MHz. To satisfy the beam dynamics requirements for particle acceleration and to minimize beam spill, the frequency of the source...

Atre, Mahesh Purushottam

1992-01-01T23:59:59.000Z

255

Optical Emission of Dusty RF Discharges: Experiment and Simulation  

SciTech Connect (OSTI)

The spectral emission of argon atoms in a dusty radio frequence (RF) discharge has been investigated experimentally and in simulations. It was observed that the spatially and temporally resolved emission of the argon atoms in the dusty discharge was increased compared to the dust-free case during sheath expansion. The corresponding simulations have revealed that the dust trapped in the sheath of the discharge leads to a small, but important, increase of the amount of high-energy electrons that in turn leads to an increased argon emission.

Melzer, A.; Lewerentz, L.; Schneider, R. [Institute of Physics, University Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany); Huebner, S. [Institute of Physics, University Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany); Department of Applied Physics, Technical University Eindhoven, NL-5600 MB Eindhoven (Netherlands); Matyash, K. [Max-Planck-Institute for Plasma Physics, EURATOM Association, D-17491 Greifswald (Germany); Ikkurthi, V. R. [Institute for Plasma Research, Bhat, Ghandinagar, Gujarat (India)

2011-11-29T23:59:59.000Z

256

Index of /research/alcator/facility/Procedures/RF  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun withconfinementEtching.348ASSEMBLY [ICO] Name Last modifiedPOWER [ICO] NameRF

257

Microsoft PowerPoint - rf_5year_review  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping RichlandScattering PropertiesTechniqueresultsReview March 11,7,RF

258

Isothermal oxidation behavior of ternary Zr-Nb-Y alloys at high temperature  

SciTech Connect (OSTI)

The effect of yttrium content on isothermal oxidation behavior of Zr-2,5%Nb-0,5%Y, Zr-2,5%Nb-1%Y Zr-2,5%Nb-1,5%Y alloy at high temperature has been studied. High temperature oxidation carried out at tube furnace in air at 600,700 and 800°C for 1 hour. Optical microscope is used for microstructure characterization of the alloy. Oxidized and un oxidized specimen was characterized by x-ray diffraction. In this study, kinetic oxidation of Zr-2,5%Nb with different Y content at high temperature has also been studied. Characterization by optical microscope showed that microstructure of Zr-Nb-Y alloys relatively unchanged and showed equiaxed microstructure. X-ray diffraction of the alloys depicted that the oxide scale formed during oxidation of zirconium alloys is monoclinic ZrO2 while unoxidised alloy showed two phase ? and ? phase. SEM-EDS examination shows that depletion of Zr composition took place under the oxide layer. Kinetic rate of oxidation of zirconium alloy showed that increasing oxidation temperature will increase oxidation rate but increasing yttrium content in the alloys will decrease oxidation rate.

Prajitno, Djoko Hadi, E-mail: djokohp@batan.go.id [Research Center for Nuclear Materials and Radiometry, Jl. Tamansari 71, Bandung 40132 (Indonesia); Soepriyanto, Syoni; Basuki, Eddy Agus [Metallurgy Engineering, Institute Technology Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia); Wiryolukito, Slameto [Materials Engineering, Institute Technology Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2014-03-24T23:59:59.000Z

259

Quantitative phase analysis of Mg:ZrO{sub 2} nanoparticles by Rietveld refinement method  

SciTech Connect (OSTI)

To quantify the structural phases of nanocrystalline ZrO{sub 2} doped with Mg ions of varying concentrations (3, 5, 10, 15 and 20%) and annealed at different temperatures. Magnesia doped zirconia was prepared by chemical co-precipitation method and annealed up to 1000°C. The monoclinic and tetragonal phases present in Mg:ZrO{sub 2} were quantified using Rietveld refinement analysis of the X-ray diffraction data and compared with the Direct method based on peak intensity calculations. Tetragonal phase was dominant in the 600°C annealed Mg:ZrO{sub 2} for all Mg concentrations.

Balaji, V., E-mail: thangadurai.p@gmail.com; Senthilkumaran, S., E-mail: thangadurai.p@gmail.com; Thangadurai, P., E-mail: thangadurai.p@gmail.com [Center for Nano Science and Technology, Pondicherry University, Puducherry- 605014 (India)

2014-04-24T23:59:59.000Z

260

System studies of rf current drive for MST  

SciTech Connect (OSTI)

Two rf schemes are being studied on the MST reversed field pinch for their potential in current profile control experiments. MHD modeling has shown that a substantial externally-driven off axis parallel current can improve stability of the dominant core tearing modes. A radially localized axisymmetric population of fast electrons has been observed by SXR emission during LH injection (100kW at 800MHz), and is consistent with CQL3D modeling which predicts a small driven current. Computational work suggests that doubling the input power will statistically improve the LH-induced SXR signal to background ratio, and that about 2MW of injected power (an order of magnitude increase) will drive enough current for stabilization of tearing modes. Additionally, a 1 MW 5.5 GHz electron Bernstein wave (EBW) experiment is under construction, which utilizes a very simple and compact antenna compatible with the demands of the RFP. EBW allows access to electron cyclotron heating and current drive in the overdense plasma. Coupling of the external electromagnetic wave to the EBW has been demonstrated, and initial tests at {approx}100kW power have produced a small, localized xray flux consistent with rf heating and high diffusivity of fast electrons. Computational work is currently underway to answer the very important questions of how much power is required, and what level of electron diffusivity is tolerable, to generate a consequential amount of EBW current.

Anderson, J. K.; Burke, D. R.; Forest, C. B.; Goetz, J. A.; Hendries, E. R.; Seltzman, A. H.; Thomas, M. A. [Department of Physics, University of Wisconsin, Madison, WI (United States); Diem, S. [Oak Ridge National Laboratory, Oak Ridge TN (United States); Harvey, R. W. [CompX, Del Mar, CA (United States); Kaufman, M. C. [Department of Physics, University of Wisconsin, Madison, WI (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States)

2011-12-23T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Mechanisms and selectivity for etching of HfO{sub 2} and Si in BCl{sub 3} plasmas  

SciTech Connect (OSTI)

The authors have investigated plasma etching of HfO{sub 2}, a high dielectric constant material, and poly-Si in BCl{sub 3} plasmas. Etching rates were measured as a function of substrate temperature (T{sub s}) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO{sub 2} and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T{sub s} only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO{sub 2} results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO{sub 2} and Si after etching in BCl{sub 3} plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO{sub 2} and on poly-Si after etching through HfO{sub 2} films. For HfO{sub 2}, a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B{sub 2}O{sub 3}. B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO{sub x}Cl{sub y}). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO{sub 2} is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B{sub 3}O{sub 4}Cl.

Wang Chunyu; Donnelly, Vincent M. [Department of Chemical and Biomolecular Engineering, University of Houston, 4800 Calhoun Road, Houston, Texas 77204 (United States)

2008-07-15T23:59:59.000Z

262

HF-based etching processes for improving laser damage resistance of fused silica optical surfaces  

SciTech Connect (OSTI)

The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical probability of damage initiation at 12 J/cm{sup 2} of an ensemble of scratches decreased from {approx}100 mm{sup -1} of scratch length to {approx}0.001 mm{sup -1}.

Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

2010-02-23T23:59:59.000Z

263

Effect of electron-phonon interaction on resistivity of some heavy fermion (HF) systems  

SciTech Connect (OSTI)

Here, we have analyzed the electron-phonon interaction in the Periodic Anderson Model (PAM) to describe the temperature dependence of resistivity in some heavy fermion (HF) systems for finite wave vector (q) and for finite temperature (T). Since the resistivity is related to the imaginary part of the electron self energy, the expression for the same is evaluated through double time temperature dependant Green function technique of the Zubarev type. The effect of different system parameters namely the position of 4f level, E{sub 0} and the electron - phonon coupling strengths on resistivity have been studied. The results obtained give satisfactory explanations to the experimental observations.

Sahoo, J., E-mail: jitendrasahoo2008@gmail.com [Assistant Director, Regional Office of Vocational Education, Sambalpur, Odisha-768004 (India); Shadangi, N. [Dept. of Physics, Silicon Institute of Technology, Sambalpur, Odisha-768200 (India); Nayak, P. [School of Physics, Sambalpur University, Sambalpur, Odisha-768019 (India)

2014-04-24T23:59:59.000Z

264

Green radio despite "Dirty RF" front-end Myriam Ariaudo*1  

E-Print Network [OSTI]

Green radio despite "Dirty RF" front-end Myriam Ariaudo*1 , Inbar Fijalkow1 , Jean-Luc Gautier1 in order to contribute in a Green radio development. In fact, the effects of typical RF imperfections, like algorithms are applied. Such algorithms enable Green applications (e.g., Orthogonal Frequency Division

Fijalkow, Inbar

265

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network [OSTI]

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

266

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network [OSTI]

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

267

Ambient-RF-Energy-Harvesting Sensor Node with Capacitor-Leakage-Aware Duty Cycle Control  

E-Print Network [OSTI]

Ambient-RF-Energy-Harvesting Sensor Node with Capacitor-Leakage-Aware Duty Cycle Control Ryo (WSN) that are solely powered by ambient RF power. Different from all other energy harvesting WSN for an energy storage in the energy harvesting system because of its efficient charge and discharge performance

Tentzeris, Manos

268

Study of high pressure gas filled RF cavities for muon collider  

E-Print Network [OSTI]

Muon collider is a considerable candidate of the next-generation high-energy lepton collider machine. Operating an RF cavity in a multi-Tesla magnet is a critical requirement in a muon accelerator and a cooling channel. However, the maximum RF gradient in a vacuum RF cavity is strongly limited by an external magnetic field. Dense hydrogen gas filled RF cavity has been proposed since it is functional of generating a high RF accelerating gradient in a strong magnetic field and making an ionization cooling process at the same time. A critical issue of the cavity is a beam- induced plasma that consumes a considerable amount of RF power. The gas filled RF test cell was made and measured the RF loading due to a beam-induced plasma by using an intense proton beam at Fermilab. By doping an electronegative gas in dense hydrogen, the plasma loading effect is significantly mitigated. The result shows that the cavity is functional with a muon collider beam. Recent progress is shown in this presentation.

Yonehara, Katsuya

2015-01-01T23:59:59.000Z

269

RF propagation in an HVAC duct system: impulse response characteristics of the channel  

E-Print Network [OSTI]

RF propagation in an HVAC duct system: impulse response characteristics of the channel Pavel V, the heating, ventilation, and air conditioning (HVAC) duct system in buildings is a complex network of hollow at RF and microwave frequencies of com- mon interest. HVAC ducts can be used as a wireless communication

Stancil, Daniel D.

270

An All Metal High Power Circularly Polarized 100 MW RF Load  

SciTech Connect (OSTI)

A compact RF load has been designed using a cascaded array of lossy radial RF chokes to dissipate 100 MW peak and 8 kW average power uniformly along the length of the load. Operation in the circularly polarized Te{_}11 mode assures uniform dissipation azimuthally as well.

Fowkes, W.R.; Jongewaard, E.N.; Loewen, R.J.; Tantawi, S.G.; Vlieks, A.E.; /SLAC

2011-08-30T23:59:59.000Z

271

Power Reduction of CMP Communication Networks via RF-Interconnects M-C. Frank Chang  

E-Print Network [OSTI]

- alized via integration of Radio Frequency Interconnect (RF- I) through on-chip transmission lines of analog waves over on- chip transmission lines. These technologies include radio fre- quency interconnect latency and low energy consumption [5][7]. RF-I transmission lines provide single-cycle cross

Cong, Jason "Jingsheng"

272

Permanent-magnet helicon sources and arrays: a new type of rf plasma Francis F. Chena)  

E-Print Network [OSTI]

Permanent-magnet helicon sources and arrays: a new type of rf plasma Francis F. Chena) and Humberto mechanism of RF coupling. However, the requirement of a dc magnetic field has prevented their wide acceptance in industry. The use of permanent magnets greatly simplifies helicon sources, and arrays of small

Chen, Francis F.

273

Permanent-magnet helicon sources and arrays: A new type of rf plasmaa... Francis F. Chenb  

E-Print Network [OSTI]

Permanent-magnet helicon sources and arrays: A new type of rf plasmaa... Francis F. Chenb mechanism of rf coupling. However, the requirement of a dc magnetic field has prevented their wide acceptance in industry. The use of permanent magnets greatly simplifies helicon sources, and arrays of small

Chen, Francis F.

274

Comparison of femtosecond and nanosecond laser-induced damage in HfO{sub 2} single-layer film and HfO{sub 2}-SiO{sub 2} high reflector  

SciTech Connect (OSTI)

HfO{sub 2} single layers, 800 nm high-reflective (HR) coating, and 1064 nm HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO{sub 2} single layer is higher than the HfO{sub 2}-SiO{sub 2} HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed.

Yuan Lei; Zhao Yuanan; Shang Guangqiang; Wang Chengren; He Hongbo; Shao Jianda; Fan Zhengxiu [Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2007-03-15T23:59:59.000Z

275

Suppression of near-edge optical absorption band in sputter deposited HfO{sub 2}-Al{sub 2}O{sub 3} nanolaminates containing nonmonoclinic HfO{sub 2}  

SciTech Connect (OSTI)

Nanolaminates of polycrystalline (tetragonal+orthorhombic) HfO{sub 2} and amorphous Al{sub 2}O{sub 3} are sputter deposited on unheated fused SiO{sub 2}, air annealed at 573-1273 K, and analyzed by x-ray diffraction and spectrophometry. Significant O 2p{yields}Hf 5d interband absorption occurs in all films at energy E{>=}6.2 eV. For E<6.2 eV, films annealed below 1273 K retain a featureless optical absorption edge despite further crystallization. A band with a 5.65 eV onset concurrently develops with m-HfO{sub 2} crystallization after a 1273 K anneal, indicating this phase and not nanocrystallinity per se is responsible for increased absorption.

Hoppe, E. E.; Aita, C. R. [Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States)

2008-04-07T23:59:59.000Z

276

Phase formation in Zr/Fe multilayers during Kr ion irradiation.  

SciTech Connect (OSTI)

A detailed study has been conducted of the effect of Kr ion irradiation on phase formation in Zr-Fe metallic multilayers, using the Intermediate Voltage Electron Microscopy (IVEM) at Argonne National Laboratory. Metallic multilayers were prepared with different overall compositions (near 50-50 and Fe-rich), and with different wavelengths (repetition thicknesses). These samples were irradiated with 300 keV Kr ions at various temperatures to investigate the final products, as well as the kinetics of phase formation. For the shorter wavelength samples, the final product was in all cases an amorphous Zr-Fe phase, in combination with Fe, while specially for the larger wavelength samples, in the Fe-rich samples the intermetallic compounds ZrFe{sub 2} and Zr{sub 3}Fe were formed in addition to the amorphous phase. The dose to full reaction decreases with temperature, and with wavelength in a manner consistent with a diffusion-controlled reaction.

Motta, A. T.

1998-01-29T23:59:59.000Z

277

Atomistic Modeling of Displacement Cascades in La2Zr2O7 Pyrochlore...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

static calculations. Citation: Chartier A, C Meis, JP Crocombette, LR Corrales, and WJ Weber.2003."Atomistic Modeling of Displacement Cascades in La2Zr2O7 Pyrochlore."Physical...

278

Analysis of the electronic structure of ZrO{sub 2} by Compton spectroscopy  

SciTech Connect (OSTI)

The electronic structure of ZrO{sub 2} is studied using the Compton scattering technique. The first-ever Compton profile measurement on polycrystalline ZrO{sub 2} was obtained using 59.54 keV gamma-rays emanating from the {sup 241}Am radioisotope. To explain the experimental data, we compute theoretical Compton profile values using the method of linear combination of atomic orbitals in the framework of density functional theory. The correlation scheme proposed by Perdew-Burke-Ernzerhof and the exchange scheme of Becke are considered. The ionic-model-based calculations for a number of configurations, i.e., Zr{sup +x}(O{sup -x/2}){sub 2} (0 {<=} x {<=} 2), are also performed to estimate the charge transfer on compound formation, and the study supports transfer of 1.5 electrons from Zr to O atoms.

Mahammad, F. M.; Mahammed, S. F. [University of Tikrit 42, Department of Physics (Iraq)] [University of Tikrit 42, Department of Physics (Iraq); Kumar, R.; Vijay, Y. K.; Sharma, B. K. [University of Rajasthan, Department of Physics (India)] [University of Rajasthan, Department of Physics (India); Sharma, G., E-mail: gsphysics@gmail.com [University of Kota, Department of Pure and Applied Physics (India)

2013-07-15T23:59:59.000Z

279

Nuclear magnetic resonance apparatus having semitoroidal rf coil for use in topical NMR and NMR imaging  

DOE Patents [OSTI]

An improved nuclear magnetic resonance (NMR) apparatus for use in topical magnetic resonance (TMR) spectroscopy and other remote sensing NMR applications includes a semitoroidal radio-frequency (rf) coil. The semitoroidal rf coil produces an effective alternating magnetic field at a distance from the poles of the coil, so as to enable NMR measurements to be taken from selected regions inside an object, particularly including human and other living subjects. The semitoroidal rf coil is relatively insensitive to magnetic interference from metallic objects located behind the coil, thereby rendering the coil particularly suited for use in both conventional and superconducting NMR magnets. The semitoroidal NMR coil can be constructed so that it emits little or no excess rf electric field associated with the rf magnetic field, thus avoiding adverse effects due to dielectric heating of the sample or to any other interaction of the electric field with the sample.

Fukushima, Eiichi (Los Alamos, NM); Roeder, Stephen B. W. (La Mesa, CA); Assink, Roger A. (Albuquerque, NM); Gibson, Atholl A. V. (Bryan, TX)

1986-01-01T23:59:59.000Z

280

Dependence of nuclear spin singlet lifetimes on RF spin-locking power  

E-Print Network [OSTI]

We measure the lifetime of long-lived nuclear spin singlet states as a function of the strength of the RF spin-locking field and present a simple theoretical model that agrees well with our measurements, including the low-RF-power regime. We also measure the lifetime of a long-lived coherence between singlet and triplet states that does not require a spin-locking field for preservation. Our results indicate that for many molecules, singlet states can be created using weak RF spin-locking fields: more than two orders of magnitude lower RF power than in previous studies. Our findings suggest that in many biomolecules, singlets and related states with enhanced lifetimes might be achievable in vivo with safe levels of RF power.

Stephen J. DeVience; Ronald L. Walsworth; Matthew S. Rosen

2012-01-06T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Oxygen impurity and microalloying effect in a Zr-based bulk metallic glass alloy  

E-Print Network [OSTI]

Oxygen impurity and microalloying effect in a Zr-based bulk metallic glass alloy C.T. Liu*, M composition Zr­10 at.%Al­5% Ti­17.9% Cu­14.6% Ni (BAM-11) was used to study the effects of oxygen impurities and microalloying on the microstructure and mechanical properties. Oxygen impurity at a level of 3000 appm

Pennycook, Steve

282

Process and properties of electroless Ni-Cu-P-ZrO{sub 2} nanocomposite coatings  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer The Ni-P and Ni-P-Cu-ZrO{sub 2} coatings were produced by electroless technique. Black-Right-Pointing-Pointer The influence of copper and ZrO{sub 2} nanoparticles on Ni-P was studied. Black-Right-Pointing-Pointer Surface morphology, structure and electrochemical behavior were evaluated. Black-Right-Pointing-Pointer The Ni-Cu-P-ZrO{sub 2} and Ni-P-ZrO{sub 2} coatings are more resistant to corrosion than Ni-P. Black-Right-Pointing-Pointer Introduction of Cu and ZrO{sub 2} in the matrix aids to the enhancement of microhardness. -- Abstract: Electroless Ni-Cu-P-ZrO{sub 2} composite coating was successfully obtained on low carbon steel matrix by electroless plating technique. Coatings with different compositions were obtained by varying copper as ternary metal and nano sized zirconium oxide particles so as to obtain elevated corrosion resistant Ni-P coating. Microstructure, crystal structure and composition of deposits were analyzed by SEM, EDX and XRD techniques. The corrosion behavior of the deposits was studied by anodic polarization, Tafel plots and electrochemical impedance spectroscopy (EIS) in 3.5% sodium chloride solution. The ZrO{sub 2} incorporated Ni-P coating showed higher corrosion resistance than plain Ni-P. The introduction of copper metal into Ni-P-ZrO{sub 2} enhanced the protection ability against corrosion. The influence of copper metal and nanoparticles on microhardness of coatings was evaluated.

Ranganatha, S. [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India)] [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Venkatesha, T.V., E-mail: drtvvenkatesha@yahoo.co.uk [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Vathsala, K. [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)] [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)

2012-03-15T23:59:59.000Z

283

Effective work function of Pt, Pd, and Re on atomic layer deposited HfO{sub 2}  

SciTech Connect (OSTI)

Platinum and Pd show a significant difference in work function on SiO{sub 2} and high-K materials (HfO{sub 2}). The effective metal work functions for Pd, Pt, and Re on atomic layer deposited HfO{sub 2}, which are different from the vacuum work function and important for device threshold voltage control, are measured by the C-V method. The difference is attributed to the dipoles at the metal/HfO{sub 2} interface, which is a result of charge transfer across the interface. Moreover, the extracted charge neutrality level and screening parameter are correlated with the phase development, film stoichiometry, and density of interface states at the metal/high-K interface.

Gu Diefeng; Dey, Sandwip K.; Majhi, Prashant [Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States) and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Planar CMOS Scaling, SEMATECH, Austin, Texas 78741 (United States)

2006-08-21T23:59:59.000Z

284

Plasma and vacuum ultraviolet induced charging of SiO{sub 2} and HfO{sub 2} patterned structures  

SciTech Connect (OSTI)

The authors compare the effects of plasma charging and vacuum ultraviolet (VUV) irradiation on oxidized patterned Si structures with and without atomic-layer-deposited HfO{sub 2}. It was found that, unlike planar oxidized Si wafers, oxidized patterned Si wafers charge up significantly after exposure in an electron-cyclotron resonance plasma. The charging is dependent on the aspect ratio of the patterned structures. This is attributed to electron and/or ion shading during plasma exposure. The addition of a 10 nm thick HfO{sub 2} layer deposited on top of the oxidized silicon structures increases the photoemission yield during VUV irradiation, resulting in more trapped positive charge compared to patterns without the HfO{sub 2} dielectric.

Lauer, J. L.; Upadhyaya, G. S.; Sinha, H.; Kruger, J. B.; Nishi, Y.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Stanford Nanofabrication Facility, Stanford University, Stanford, California 94303 (United States); Stanford University, Stanford, California 94305 (United States); Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2012-01-15T23:59:59.000Z

285

First observation of /sup 162/Hf decay completion of an alpha -decay chain  

E-Print Network [OSTI]

The new isotope /sup 162/Hf (T/sub 1/2/=(37.6+or-0.8)s) is produced in a /sup 142/Nd (/sup 24/Mg,4n) reaction. The activities produced in this reaction are transported to a measuring station by use of a He- jet system. Decay properties are observed with alpha -, gamma -, and gamma - gamma -spectroscopy. The Z-assignment of the new isotope is based on a cross bombardment on /sup 141/Pr target and on the results of a gamma -X-ray coincidence measurement. The mass assignment is deduced from the excitation function measurements. From the measured alpha -decay energy E/sub alpha /=4308 (10) keV new mass values are derived for /sup 162/Hf, /sup 166/W, /sup 170/Os, /sup 174/Pt, and /sup 178/Hg. These new mass values make it possible to establish systematics of two-proton and one-proton binding energies far from stability. (20 refs).

Schrewe, U J; Hagberg, E; Hardy, J C; Koslowsky, V T; Schmeing, H; Sharma, K S

1981-01-01T23:59:59.000Z

286

Effects of shock waves on the performance of a cw supersonic HF chemical laser  

SciTech Connect (OSTI)

The effects of oblique shock waves on the gain and the output power of a cw supersonic HF chemical laser are theoretically investigated. A one-dimensional model is used to solve the flow of a premixed H/sub 2/--SF/sub 6/--H/sub e/ or H/sub 2/--F/sub 2/--H/sub e/ mixture through the resonator, allowing the presence of oblique shock waves in the flow. It is shown that a shock wave significantly affects the laser performance due to the gas compression at the shock front and due to acceleration of the chemical and energy transfer processes. It was found that immediately behind the shock front the gain coefficients and the photon energy sharply increase and further downstream they fall off rapidly, thus the profiles of the gain and radiation flux become narrower along the flow direction. Integration of the radiation flux along the cavity coordinate reveals that in some cases the total available power is significantly higher than the available power obtained in the undisturbed flow. For HF lasers pumped by the chain reactions it was found that choking occurs over a wide range of flow parameters including very weak shock waves. This is due to the large amount of heat released by the exothermic reactions.

Stricker, J.; Waichman, K.

1984-09-01T23:59:59.000Z

287

Measurements of spatial and frequency coherence of an equatorial hf path during spread-F  

SciTech Connect (OSTI)

In August 1990, the authors set up an hf path on the equatorial path between Maloelap Atoll and Bikini Atoll. This path, which had a range of 702 km, reflected in the ionosphere approximately 100 km north of the Altair radar location on Kwajalein. Transmitters at Maloelap broadcasted four cw tones within bandwidth of either 4 kHz, 9 kHz, or 70 kHz to be used to determine frequency coherence and also a phase-coded pseudo random sequence with a bandwidth of 60 kHz (channel probe) to be used to determine time delay spread. A spatial array of antennas was deployed at Bikini to measure spatial and frequency coherence using the cw broadcasts. The system was run in the post-sunset time period over two weeks during which almost every night showed significant degradation due to spread F resulting in rapid fading, decreased spatial and frequency coherence, and increased time delay spread. Doppler spreads of greater than 20 Hz were not uncommon, and the spatial correlation distances and frequency coherence bandwidths became so small (50 meters and 1 kHz respectively) that the experiment had to be readjusted. Measurements taken by the Altair incoherent scatter radar and the CUPRI 50 MHz coherent scatter radar indicate that although the bistatic hf channel is affected by the large scale plume structures, most of the [open quotes]damage[close quotes] is done by the bottomside spread F.

Fitzgerald, T.J.; Argo, P.E.; Carlos, R.C.

1993-01-01T23:59:59.000Z

288

Measurements of spatial and frequency coherence of an equatorial hf path during spread-F  

SciTech Connect (OSTI)

In August 1990, the authors set up an hf path on the equatorial path between Maloelap Atoll and Bikini Atoll. This path, which had a range of 702 km, reflected in the ionosphere approximately 100 km north of the Altair radar location on Kwajalein. Transmitters at Maloelap broadcasted four cw tones within bandwidth of either 4 kHz, 9 kHz, or 70 kHz to be used to determine frequency coherence and also a phase-coded pseudo random sequence with a bandwidth of 60 kHz (channel probe) to be used to determine time delay spread. A spatial array of antennas was deployed at Bikini to measure spatial and frequency coherence using the cw broadcasts. The system was run in the post-sunset time period over two weeks during which almost every night showed significant degradation due to spread F resulting in rapid fading, decreased spatial and frequency coherence, and increased time delay spread. Doppler spreads of greater than 20 Hz were not uncommon, and the spatial correlation distances and frequency coherence bandwidths became so small (50 meters and 1 kHz respectively) that the experiment had to be readjusted. Measurements taken by the Altair incoherent scatter radar and the CUPRI 50 MHz coherent scatter radar indicate that although the bistatic hf channel is affected by the large scale plume structures, most of the {open_quotes}damage{close_quotes} is done by the bottomside spread F.

Fitzgerald, T.J.; Argo, P.E.; Carlos, R.C.

1993-07-01T23:59:59.000Z

289

Structurefunction of the Na/H Exchanger Regulatory Factor (NHE-RF) 2199 The Journal of Clinical Investigation  

E-Print Network [OSTI]

, Department of Pharmacology and Cancer Biology, Duke University Medical Center, Durham, North Carolina 27710 representing full-length NHE-RF as well as truncated and mutant forms of NHE-RF were deter- mined using/H exchanger activity that is not regulated by PKA. NHE-RF in the presence of ATP and Mg but not PKA, in

Hall, Randy A

290

Material Selection and Characterization for High Gradient RF Applications  

E-Print Network [OSTI]

The selection of candidate materials for the accelerating cavities of the Compact Linear Collider (CLIC) is carried out in parallel with high power RF testing. The maximum DC breakdown field of copper, copper alloys, refractory metals, aluminium and titanium have been measured with a dedicated setup. Higher maximum fields are obtained for refractory metals and for titanium, which exhibits, however, important damages after conditioning. Fatigue behaviour of copper alloys has been studied for surface and bulk by pulsed laser irradiation and ultrasonic excitation, respectively. The selected copper alloys show consistently higher fatigue resistance than copper in both experiments. In order to obtain the best local properties in the device a possible solution is a bi-metallic assembly. Junctions of molybdenum and copper-zirconium UNS C15000 alloy, achieved by HIP (Hot Isostatic Pressing) diffusion bonding or explosion bonding were evaluated for their mechanical strength. The reliability of the results obtained wit...

Arnau-Izquierdo, G; Heikkinen, S; Ramsvik, T; Sgobba, Stefano; Taborelli, M; Wuensch, W

2007-01-01T23:59:59.000Z

291

RF Design Optimization for New Injector Cryounit at CEBAF  

SciTech Connect (OSTI)

A new injector superconducting RF (SRF) cryounit with one new 2-cell, B=0.6 cavity plus one refurbished 7-cell, B=0.97, C100 style cavity has been re-designed and optimized for the engineering compatibility of existing module for CEBAF operation. The optimization of 2-cell cavity shape for longitudinal beam dynamic of acceleration from 200keV to 533keV and the minimization of transverse kick due to the waveguide couplers to less than 1 mrad have been considered. Operating at 1497MHz, two cavities has been designed into a same footprint of CEBAF original quarter cryomodule to deliver an injection beam energy of 5MeV in less than 0.27{degree} rms bunch length and a maximum energy spread of 5keV.

Wang, Haipeng; Cheng, Guangfeng; Hannon, Fay E.; Hofler, Alicia S.; Kazimi, Reza; Preble, Joe; Rimmer, Robert A.

2013-06-01T23:59:59.000Z

292

A new microphonics measurement method for superconducting RF cavities  

SciTech Connect (OSTI)

Mechanical vibrations of the superconducting cavity, also known as microphonics, cause shifts in the resonant frequency of the cavity. In addition to requiring additional RF power, these frequency shifts can contribute to errors in the closed loop phase and amplitude regulation. In order to better understand these effects, a new microphonics measurement method was developed, and the method was successfully used to measure microphonics on the half-wave superconducting cavity when it was operated in a production style cryostat. The test cryostat held a single ?=0.1 half-wave cavity which was operated at 162.5 MHz [1] and [2]. It's the first time that the National Instruments PXIe-5641R intermediate frequency transceiver has been used for microphonics measurements in superconducting cavities. The new microphonics measurement method and results will be shown and analyzed in this paper.

Gao,Zheng; He,Yuan; Chang,Wei; Powers, Tom [JLAB; Yue,Wei-ming; Zhu,Zheng-long; Chen,Qi

2014-09-01T23:59:59.000Z

293

Results of a preliminary, high power RF thruster test  

SciTech Connect (OSTI)

The objective of this program was to demonstrate a high power electrodeless, RF electric propulsion concept. This was successfully accomplished. No attempt was made to optimize the design of the thruster with regard to physical dimensions, mass flow, nozzle shape, operational frequency, or power level. Measurements made were chamber pressure, total and static pressures at the nozzle exit plane and exhaust tank pressure. Mass flows range from about 0.4 to 1 gm/sec and, assuming perfect gas relationships, specific impulses up to 580 sec were obtained. Typical chamber pressure was 300 torr exhausting to a tank pressure of about 10 torr. Working fluids used were argon, helium and mixtures of the two. No degration of the device was detected after 12 start/stop cycles, about three hours of total run time, and a maximum input power of 70 kW. 10 refs.

Brewer, L.; Karras, T.; Frind, G.; Holmes, D.G.

1989-01-01T23:59:59.000Z

294

National RF Test Facility as a multipurpose development tool  

SciTech Connect (OSTI)

Additions and modifications to the National RF Test Facility design have been made that (1) focus its use for technology development for future large systems in the ion cyclotron range of frequencies (ICRF), (2) expand its applicability to technology development in the electron cyclotron range of frequencies (ECRF) at 60 GHz, (3) provide a facility for ELMO Bumpy Torus (EBT) 60-GHz ring physics studies, and (4) permit engineering studies of steady-state plasma systems, including superconducting magnet performance, vacuum vessel heat flux removal, and microwave protection. The facility will continue to function as a test bed for generic technology developments for ICRF and the lower hybrid range of frequencies (LHRF). The upgraded facility is also suitable for mirror halo physics experiments.

McManamy, T.J.; Becraft, W.R.; Berry, L.A.; Blue, C.W.; Gardner, W.L.; Haselton, H.H.; Hoffman, D.J.; Loring, C.M. Jr.; Moeller, F.A.; Ponte, N.S.

1983-01-01T23:59:59.000Z

295

Nanometer emittance ultralow charge beams from rf photoinjectors  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this paper we discuss the generation of a new class of high brightness relativistic electron beams, characterized by ultralow charge (0.1–1 pC) and ultralow normalized emittance (<50??nm ). These beams are created in rf photoinjectors when the laser is focused on the cathode to very small transverse sizes (<30???m rms). In this regime, the charge density at the cathode approaches the limit set by the extraction electric field. By shaping the laser pulse to have a cigarlike aspect ratio (the longitudinal dimension much larger than the transverse dimension) and a parabolic temporal profile, the resulting space charge dominated dynamics creates a uniformly filled ellipsoidal distribution and the emittance can be nearly preserved to its thermal value. We also present a new method, based on a variation of the pepper-pot technique, for single shot measurements of the ultralow emittances for this new class of beams.

Li, R. K.; Roberts, K. G.; Scoby, C. M.; To, H.; Musumeci, P.

2012-09-01T23:59:59.000Z

296

The Development of the Linac Coherent Light Source RF Gun  

E-Print Network [OSTI]

The Linac Coherent Light Source (LCLS) is the first x-ray laser user facility based upon a free electron laser (FEL). In addition to many other stringent requirements, the LCLS XFEL requires extraordinary beam quality to saturate at 1.5 angstroms within a 100 meter undulator.[1] This new light source is using the last kilometer of the three kilometer linac at SLAC to accelerate the beam to an energy as high as 13.6 GeV and required a new electron gun and injector to produce a very bright beam for acceleration. At the outset of the project it was recognized that existing RF guns had the potential to produce the desired beam but none had demonstrated it. This paper describes the analysis and design improvements of the BNL/SLAC/UCLA s-band gun leading to achievement of the LCLS performance goals.

Dowell, David H; Lewandowski, James; Limborg-Deprey, Cecile; Li, Zenghai; Schmerge, John; Vlieks, Arnold; Wang, Juwen; Xiao, Liling

2015-01-01T23:59:59.000Z

297

Interplay between gadolinium dopants and oxygen vacancies in HfO{sub 2}: A density functional theory plus Hubbard U investigation  

SciTech Connect (OSTI)

The influence of gadolinium (Gd) doping on the oxygen vacancy (V{sub O}) in monoclinic HfO{sub 2} have been studied by the first-principles calculations within the spin-polarized generalized gradient approximation plus Hubbard U approach. It is found that the Gd dopant and V{sub O} show strong attractive interaction, resulting in a cooperative effect that the substitution of Gd for Hf (Gd{sub Hf}) would increase the probability of oxygen vacancies generation and vice versa. The Gd{sub Hf} is more energetically favorable to be next to the vacancy site of a three-coordinated oxygen (O3), forming a complex defect Gd{sub Hf} + V{sub O}. A single Gd{sub Hf} acts a hole donor and passivates the defect states of V{sub O}. Our results suggest that the decrease of the V{sub O}-related defect states observed in the photoluminescence spectra of Gd-HfO{sub 2} is because Gd doping passivates the defect states of V{sub O}, rather than caused by decrease of V{sub O} concentration. Our findings would clarify the debate about the influence of Gd doping on the oxygen vacancies in HfO{sub 2}.

Zhang, Wei [Department of Criminal Science and Technology, Nanjing Forest Police College, Nanjing 210023 (China); Hou, Z. F., E-mail: zhufeng.hou@gmail.com [Department of Electronic Science, Xiamen University, Xiamen 361005 (China)

2014-03-28T23:59:59.000Z

298

A comparison of EISCAT and HF Doppler observations of a ULF wave D. M. Wright, T. K. Yeoman, J. A. Davies  

E-Print Network [OSTI]

A comparison of EISCAT and HF Doppler observations of a ULF wave D. M. Wright, T. K. Yeoman, J. A, Wright et al. (1997) presented a detailed study of ULF wave signatures observed by a new sounder at high observed by HF Doppler Correspondence to: D. M. Wright Presented at the Eighth International EISCAT

Paris-Sud XI, Université de

299

Next Generation Fast RF Interlock Module and ATCA Adapter for ILC High Availability RF Test Station Demonstration  

SciTech Connect (OSTI)

High availability interlocks and controls are required for the ILC (International Linear Collider) L-Band high power RF stations. A new F3 (Fast Fault Finder) VME module has been developed to process both fast and slow interlocks using FPGA logic to detect the interlock trip excursions. This combination eliminates the need for separate PLC (Programmable Logic Controller) control of slow interlocks. Modules are chained together to accommodate as many inputs as needed. In the next phase of development the F3's will be ported to the new industry standard ATCA (Advanced Telecom Computing Architecture) crate (shelf) via a specially designed VME adapter module with IPMI (Intelligent Platform Management Interface). The goal is to demonstrate auto-failover and hot-swap for future partially redundant systems.

Larsen, R

2009-10-17T23:59:59.000Z

300

Pressurized H_{2} rf Cavities in Ionizing Beams and Magnetic Fields  

SciTech Connect (OSTI)

A major technological challenge in building a muon cooling channel is operating RF cavities in multi-tesla external magnetic fields. We report the first experimental characterization of a high pressure gas-filled 805 MHz RF cavity for use with intense ionizing beams and strong external magnetic fields. RF power consumption by beam-induced plasma was investigated with hydrogen and deuterium gases with pressures between 20 and 100 atm and peak RF gradients between 5 and 50 MV/m. The energy absorption per ion pair-RF cycle ranges from 10?18 to 10?16 J. The low pressure case agrees well with an analytical model based on electron and ion mobilities. Varying concentrations of oxygen gas were investigated to remove free electrons from the cavity and reduce the RF power consumption. Measurements of the electron attachment time to oxygen and rate of ion-ion recombination were also made. Additionally, we demonstrate the operation of the gas-filled RF cavity in a solenoidal field of up to 3 T, finding no major magnetic field dependence. These results indicate that a high pressure gas-filled cavity is potentially a viable technology for muon ionization cooling.

Chung, M.; et al.

2013-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Superlattice Structure and Precipitates in O+ and Zr+ Ion Coimplanted SrTiO3: a Model Waste Form for 90Sr  

SciTech Connect (OSTI)

We investigate strontium titanate as a model waste form for 90Sr. Implantation with O+ and Zr+ ions, followed by annealing at 1423 K, was performed to simulate 90Sr to 90Zr decays. At low Zr concentrations, we observe formation of a ZrO-Sr superlattice structure. Ab initio calculations indicate that this atomic configuration is energetically favorable. At higher Zr concentrations, we observe precipitates of ZrO2 with a coherently strained interface, or a monolayer of disordered interfacial structure. Potential candidacy of 90SrTiO3 as a waste form for permanent disposal of 90Sr is discussed.

Jiang, Weilin; Van Ginhoven, Renee M.; Kovarik, Libor; Jaffe, John E.; Arey, Bruce W.

2012-07-13T23:59:59.000Z

302

Infrared study on room-temperature atomic layer deposition of HfO{sub 2} using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents  

SciTech Connect (OSTI)

Room-temperature atomic layer deposition (ALD) of HfO{sub 2} was examined using tetrakis (ethylmethylamino)hafnium (TEMAH) and remote plasma-excited water and oxygen. A growth rate of 0.26?nm/cycle at room temperature was achieved, and the TEMAH adsorption and its oxidization on HfO{sub 2} were investigated by multiple internal reflection infrared absorption spectroscopy. It was observed that saturated adsorption of TEMAH occurs at exposures of ?1?×?10{sup 5}?L (1 L?=?1?×?10{sup ?6} Torr s) at room temperature, and the use of remote plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH molecules on the HfO{sub 2} surface, to produce OH sites. The infrared study suggested that Hf–OH plays a role as an adsorption site for TEMAH. The reaction mechanism of room temperature HfO{sub 2} ALD is discussed in this paper.

Kanomata, Kensaku [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan and Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Ohba, Hisashi; Pungboon Pansila, P.; Ahmmad, Bashir; Kubota, Shigeru; Hirahara, Kazuhiro; Hirose, Fumihiko, E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

2015-01-01T23:59:59.000Z

303

Solid state RF power: The route to 1W per euro cent  

SciTech Connect (OSTI)

In most particle accelerators RF power is a decisive design constraint due to high costs and relative inflexibility of current electron beam based RF sources, i.e. Klystrons, Magnetrons, Tetrodes etc. At VHF/UHF frequencies the transition to solid state devices promises to fundamentally change the situation. Recent progress brings 1 Watt per Euro cent installed cost within reach. We present a Silicon Carbide semiconductor solution utilising the Solid State Direct Drive technology at unprecedented efficiency, power levels and power densities. The proposed solution allows retrofitting of existing RF accelerators and opens the route to novel particle accelerator concepts.

Heid, Oliver [Siemens AG, Mozartstrasse 57, Erlangen (Germany)

2013-04-19T23:59:59.000Z

304

RF-driven ion source with a back-streaming electron dump  

DOE Patents [OSTI]

A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage.

Kwan, Joe; Ji, Qing

2014-05-20T23:59:59.000Z

305

RF-sheath heat flux estimates on Tore Supra and JET ICRF antennae. Extrapolation to ITER  

SciTech Connect (OSTI)

RF-sheath induced heat loads are identified from infrared thermography measurements on Tore Supra ITER-like prototype and JET A2 antennae, and are quantified by fitting thermal calculations. Using a simple scaling law assessed experimentally, the estimated heat fluxes are then extrapolated to the ITER ICRF launcher delivering 20 MW RF power for several plasma scenarios. Parallel heat fluxes up to 6.7 MW/m{sup 2} are expected very locally on ITER antenna front face. The role of edge density on operation is stressed as a trade-off between easy RF coupling and reasonable heat loads. Sources of uncertainty on the results are identified.

Colas, L.; Portafaix, C.; Goniche, M. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Jacquet, Ph. [EURATOM/UKAEA Fusion Association, Culham, OX14 3DB (United Kingdom); Agarici, G. [Fusion for Energy, C/Josep Pla 2, E-08019 Barcelona (Spain)

2009-11-26T23:59:59.000Z

306

Arc Detection and Interlock Module for the PEP II Low Level RF System  

SciTech Connect (OSTI)

A new arc detection and interlock generating module for the SLAC PEP-II low-level RF VXI-based system has been developed. The system is required to turn off the RF drive and high voltage power supply in the event of arcing in the cavity windows, klystron window, or circulator. Infrared photodiodes receive arc signals through radiation resistant optical fibers. Gain and bandwidth are selectable for each channel to allow tailoring response. The module also responds to interlock requests from other modules in the VXI system and communicates with the programmable logic controller (PLC) responsible for much of the low-level RF system's interlock functionality.

Tighe, R.; /SLAC

2011-08-31T23:59:59.000Z

307

Computational investigation of the phase stability and the electronic properties for Gd-doped HfO{sub 2}  

SciTech Connect (OSTI)

Rare earth doping is an important approach to improve the desired properties of high-k gate dielectric oxides. We have carried out a comprehensive theoretical investigation on the phase stability, band gap, formation of oxygen vacancies, and dielectric properties for the Gd-doped HfO{sub 2}. Our calculated results indicate that the tetragonal phase is more stable than the monoclinic phase when the Gd doping concentration is greater than 15.5%, which is in a good agreement with the experimental observations. The dopant's geometric effect is mainly responsible for the phase stability. The Gd doping enlarges the band gap of the material. The dielectric constant for the Gd-doped HfO{sub 2} is in the range of 20–30 that is suitable for high-k dielectric applications. The neutral oxygen vacancy formation energy is 3.2?eV lower in the doped material than in pure HfO{sub 2}. We explain the experimental observation on the decrease of photoluminescence intensities in the Gd-doped HfO{sub 2} according to forming the dopant-oxygen vacancy complexes.

Wang, L. G. [General Research Institute for Nonferrous Metals, Beijing 100088 (China); California Institute of Technology, Pasadena, California 91125 (United States); Xiong, Y.; Xiao, W.; Cheng, L.; Du, J.; Tu, H. [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Walle, A. van de [Brown University, Providence, Rhode Island 02912 (United States); California Institute of Technology, Pasadena, California 91125 (United States)

2014-05-19T23:59:59.000Z

308

Analytical Potential Energy Surface for the Na + HF NaF + H reaction: Application of Conventional Transition-State Theory  

E-Print Network [OSTI]

Analytical Potential Energy Surface for the Na + HF NaF + H reaction: Application of Conventional Transition-State Theory Alessandra F. A. Vilela, Ricardo Gargano a Patr´icia R.P. Barreto b a Instituto de from calculation of the rate constant using con- ventional Transition State Theory (TST

309

NEW ACTIVE LOAD VOLTAGE CLAMP FOR HF-LINK CONVERTERS Petar Ljusev and Michael A.E. Andersen  

E-Print Network [OSTI]

that incorporates both the main power and auxiliary transformer on the same magnetic core. Keywords: HF not need additional power components, but do have increased control complexity and safety problems. The latter solutions satisfy both the commutation and safety issues, but ask for additional power components

310

Computer simulations for direct conversion of the HF electromagnetic wave into the upper hybrid wave in ionospheric heating experiments  

E-Print Network [OSTI]

Computer simulations for direct conversion of the HF electromagnetic wave into the upper hybrid emissions (SEE). A direct conversion process is proposed as an excitation mech- anism of the upper hybrid, 1996) The electrostatic waves at the UH resonance were assumed to be excited via ``direct conversion

Paris-Sud XI, Université de

311

The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar  

E-Print Network [OSTI]

The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar Namir E. Kassim Naval Research Laboratory, Washington, DC 20375 Stephen M. White AFRL will be a powerful tool for solar physics and space weather investigations, through its ability to characterize

Ellingson, Steven W.

312

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

313

Gas-phase hydrogen isotope exchange in HF + D2O  

SciTech Connect (OSTI)

The gas-phase isotope exchange reaction of HF and D2O has been studied by flow tube and matrix isolation techniques over a range of concentrations and reaction times. The matrix isolation/FTIR gas sampling and analysis technique proved capable of detecting reactants and products even at low concentrations (0.02% and less) and for reaction times down to 10 msec. The reaction under study, however, is sufficiently rapid that it appeared complete at 10 msec even at the lowest reactant concentrations used. From these results, it is therefore possible only to place a lower bound on the reaction rate. This lower bound, arrived at by computer modeling an assumed second order reaction in the flow tube, represents a refinement in the previously established limit by about a factor of 10U and may thus be of utility in UF6 atmospheric release models. 4 refs., 13 figs., 2 tabs.

Trowbridge, L.D.

1982-12-31T23:59:59.000Z

314

The effects of zirconia morphology on methanol synthesis from COand H2 over Cu/ZrO2 catalysts: Part I -- Steady-State Studies  

SciTech Connect (OSTI)

The effect of zirconia phase on the activity and selectivityof Cu/ZrO2 for the hydrogenation of CO has been investigated. Relativelypure t-ZrO2 and m-ZrO2 were prepared with high surface areas (~; 145m2/g). Copper was then deposited onto the surface of these materials byeither incipient-wetness impregnation or deposition-precipitation. For afixed Cu surface area, Cu/m-ZrO2 was tenfold more active for methanolsynthesis than Cu/t-ZrO2 from a feed of 3/1 H2/CO at 3.0 MPa andtemperatures between 473 and 523 K. Cu/m-ZrO2 also exhibited a higherselectivity to methanol. Increasing the Cu surface area on m-ZrO2resulted in further improvement in activity with minimal change inselectivity. Methanol productivity increased linearly for both Cu/t-ZrO2and Cu/m-ZrO2 with increasing Cu surface area. The difference in inherentactivity of each phase paralleled the stronger and larger CO adsorptioncapacity of the Cu/m-ZrO2 as quantified by CO-TPD. The higher COadsorption capacity of Cu/m-ZrO2 is attributed to the presence of a highconcentration of anionic vacancies on the surface of m-ZrO2. Suchvacancies expose cus-Zr4+ cations, which act as Lewis acid centers andenhance the Bronsted acidity of adjacent Zr-OH groups. The presence ofcus-Zr4+ sites and adjacent Bronsted acidic Zr-OH groups contributes tothe adsorption of CO as HCOO-Zr groups, which are the initial precursorsto methanol.

Rhodes, Michael J.; Bell, Alexis T.

2005-03-21T23:59:59.000Z

315

Solid Solubilities of Pu, U, Gd and Hf in Candidate Ceramic Nuclear Wasteforms  

SciTech Connect (OSTI)

This goal of this research project was to determine the solid solubility of Pu, U, Gd, and Hf in candidate ceramics for immobilization of high-level nuclear waste. The experimental approach was to saturate each phase by adding more than the solid solubility limit of the given cation, using a nominated substitution scheme, and then analyzing the candidate phase that formed to evaluate the solid solubility limit under firing conditions. Confirmation that the solid solution limit had been reached insofar as other phases rich in the cation of interest was also required. The candidate phases were monazite, titanite, zirconolite, perovskite, apatite, pyrochlore, and brannerite. The valences of Pu and U were typically deduced from the firing atmosphere, and charge balancing in the candidate phase composition as evaluated from electron microscopy, although in some cases it was measured directly by x-ray absorption and diffuse reflectance spectroscopies (for U). Tetravalent Pu and U have restricted (< 0.1 formula units) solid solubility in apatite, titanite, and perovskite. Trivalent Pu has a larger solubility in apatite and perovskite than Pu4+. U3+ appears to be a credible species in reduced perovskite with a solubility of {approximately} 0.25 f.u. as opposed to {approximately} 0.05 f.u. for U4+. Pu4+ is a viable species in monazite and is promoted at lower firing temperatures ({approximately} 800 C) in an air atmosphere. Hf solubility is restricted in apatite, monazite (< 0.1 f.u.), but is {approximately} 0.2 and 0.5 f.u. in brannerite and titanite, respectively. Gd solubility is extended in all phases except for titanite ({approximately} 0.3 f.u.). U5+ was identified by DRS observations of absorption bands in the visible/near infrared photon energy ranges in brannerite and zirconolite, and U4+ in zirconolite was similarly identified.

Vance, Eric R.; Carter, M. L.; Lumpkin, G. R.; Day, R. A.; Begg, B. D.

2001-04-02T23:59:59.000Z

316

Melting temperatures of the ZrO{sub 2}-MOX system  

SciTech Connect (OSTI)

Severe accidents occurred at the Fukushima Daiichi Nuclear Power Plant Units 1-3 on March 11, 2011. MOX fuels were loaded in the Unit 3. For the thermal analysis of the severe accident, melting temperature and phase state of MOX corium were investigated. The simulated coriums were prepared from 4%Pu-containing MOX, 8%Pu-containing MOX and ZrO{sub 2}. Then X-ray diffraction, density and melting temperature measurements were carried out as a function of zirconium and plutonium contents. The cubic phase was observed in the 25%Zr-containing corium and the tetragonal phase was observed in the 50% and 75%Zr-containing coria. The lattice parameter and density monotonically changed with Pu content. Melting temperature increased with increasing Pu content; melting temperature were estimated to be 2932 K for 4%Pu MOX corium and 3012 K for 8%Pu MOX corium in the 25%ZrO{sub 2}-MOX system. The lowest melting temperature was observed for 50%Zr-containing corium. (authors)

Uchida, T.; Hirooka, S.; Kato, M.; Morimoto, K. [Japan Atomic Energy Agency, 4-33, Muramatsu, Tokai-mura, Naka-gun, Ibaraki 319-1194 (Japan); Sugata, H.; Shibata, K.; Sato, D. [Inspection Development Company, 4-33, Muramatsu, Tokai-mura, Naka-gun, Ibaraki 319-1194 (Japan)

2013-07-01T23:59:59.000Z

317

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

318

Tunable Substrate Integrated Waveguide Filters Implemented with PIN Diodes and RF MEMS Switches  

E-Print Network [OSTI]

This thesis presents the first fully tunable substrate integrated waveguide (SIW) filter implemented with PIN diodes and RF MEMS switches. The methodology for tuning SIW filters is explained in detail and is used to create three separate designs...

Armendariz, Marcelino

2012-02-14T23:59:59.000Z

319

E-Print Network 3.0 - average current rf Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

management estimates the channel upon a frame recep- tion. MIMO... MHz bandwidth. 6.2 Simulation Results We compare the average energy per bit of RF chain management... measure...

320

A New First-Principles Calculation of Field-Dependent RF Surface Impedance of BCS Superconductor  

SciTech Connect (OSTI)

There is a need to understand the intrinsic limit of radiofrequency (RF) surface impedance that determines the performance of superconducting RF cavities in particle accelerators. Here we present a field-dependent derivation of Mattis-Bardeen theory of the RF surface impedance of BCS superconductors based on the shifted density of states resulting from coherently moving Cooper pairs. Our theoretical prediction of the effective BCS RF surface resistance (Rs) of niobium as a function of peak surface magnetic field amplitude agrees well with recently reported record low loss resonant cavity measurements from JLab and FNAL with carefully, yet differently, prepared niobium material. The surprising reduction in resistance with increasing field is explained to be an intrinsic effect.

Xiao, Binping [Brookhaven National Laboratory, Upton, New York (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2014-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Design of RF/IF analog to digital converters for software radio communication receivers  

E-Print Network [OSTI]

Software radio architecture can support multiple standards by performing analogto- digital (A/D) conversion of the radio frequency (RF) signals and running reconfigurable software programs on the backend digital signal processor (DSP). A slight...

Thandri, Bharath Kumar

2007-09-17T23:59:59.000Z

322

Highly Parallel Magnetic Resonance Imaging with a Fourth Gradient Channel for Compensation of RF Phase Patterns  

E-Print Network [OSTI]

A fourth gradient channel was implemented to provide slice dependent RF coil phase compensation for arrays in dual-sided or "sandwich" configurations. The use of highly parallel arrays for single echo acquisition magnetic resonance imaging allows...

Bosshard, John 1983-

2012-08-20T23:59:59.000Z

323

E-Print Network 3.0 - atmospheric rf device Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rf device Page: << < 1 2 3 4 5 > >> 1 Packaging of Ka-Band Patch Antenna and Optoelectronic Components for Dual-Mode Indoor Wireless Communication Summary: that the coupling...

324

Experimental evaluation of 350 MHz RF accelerator windows for the low energy demonstration accelerator  

SciTech Connect (OSTI)

Radio frequency (RF) windows are historically a point where failure occurs in input power couplers for accelerators. To obtain a reliable, high-power, 350 MHz RF window for the Low Energy Demonstration Accelerator (LEDA) project of the Accelerator Production of Tritium program, RF windows prototypes from different vendors were tested. Experiments were performed to evaluate the RF windows by the vendors to select a window for the LEDA project. The Communications and Power, Inc. (CPI) windows were conditioned to 445 kW in roughly 15 hours. At 445 kW a window failed, and the cause of the failure will be presented. The English Electronic Valve, Inc. (EEV) windows were conditioned to 944 kW in 26 hours and then tested at 944 kW for 4 hours with no indication of problems.

Cummings, K.; Rees, D.; Roybal, W. [and others

1997-09-01T23:59:59.000Z

325

PURDUE UNIVERSITY ULTRAFAST OPTICS & OPTICAL FIBER COMMUNICATIONS LABORATORY Photonic RF Waveform Synthesis,  

E-Print Network [OSTI]

PURDUE UNIVERSITY ULTRAFAST OPTICS & OPTICAL FIBER COMMUNICATIONS LABORATORY Photonic RF Waveform, Shijun Xiao Funding from ARO, DARPA, and NSF #12;PURDUE UNIVERSITY ULTRAFAST OPTICS & OPTICAL FIBER performance (spectral engineering, dispersion compensation) #12;PURDUE UNIVERSITY ULTRAFAST OPTICS & OPTICAL

Purdue University

326

Detection technique and front-end RF tunable filter for cognitive radio systems  

E-Print Network [OSTI]

dual-mode WiMAX/WLAN direct- conversion receiver,” in Proc.Hamilton, “Aspects of direct conversion receiver design,” inand M. Ismail, “A direct conversion WiMAX RF receiver front-

Park, Sanghoon

2010-01-01T23:59:59.000Z

327

High gain proportional rf control stability at TESLA cavities Elmar Vogel  

E-Print Network [OSTI]

High gain proportional rf control stability at TESLA cavities Elmar Vogel Deutsches Elektronen) based on TESLA technology. Additional control loops improve the field regulation by treating repetitive loops is desirable for the strong suppression of nonpredictive and nonrepetitive disturbances. TESLA

328

Thesis for the Degree of Licentiate of Engineering CTH-RF-190 Development and Investigation of  

E-Print Network [OSTI]

Thesis for the Degree of Licentiate of Engineering CTH-RF-190 Development and Investigation (ADS), Feynman-alpha formulae, source modulation method, point kinetics #12;#12;This licentiate thesis

Haviland, David

329

A CW normal-conductive RF gun for free electron laser and energy recovery linac applications  

E-Print Network [OSTI]

Todd, State-of-the art electron guns and injector de- signs,7] Summary of working group on guns and injectors, 41st Ad-A CW normal-conductive RF gun for free electron laser and

Baptiste, Kenneth

2009-01-01T23:59:59.000Z

330

A high-gradient high-duty-factor Rf photo-cathode electron gun  

E-Print Network [OSTI]

approximately 13 MV/m, but in the gun cell the fields couldBeam Radius [mm] End of rf gun Uncompensated Compensated 6preliminary analysis of the gun indicates that the fields in

Rimmer, Robert A.; Hartman, Neal; Lidia, Steven M.; Wang, Shaoheng

2002-01-01T23:59:59.000Z

331

Analysis of slice transverse emittance evolutioin in a photocathode RF gun  

E-Print Network [OSTI]

evolution at 1 nC for the LCLS gun including the solenoidevolution at 1 nC for the LCLS gun including the solenoidevolution in a photocathode RF gun Zhirong Huang, Yuantao

Huang, Zhirong

2009-01-01T23:59:59.000Z

332

High-power rf-pulsed modulators for the Los Alamos free-electron laser  

SciTech Connect (OSTI)

In the rf-driven free-electron laser (FEL) at the Los Alamos National Laboratory, there are two pulsed-power rf modulators as sources for two tandem, side-coupled 20-MeV linear accelerators. The rf power used to control the cavity fields is supplied by two 5.5-MW modulating anode klystrons operating at a center frequency of 1300.2 MHz. The modulation of the 125 kV klystron is achieved by using a triode switch tube that provides a pulse width up to 300 ..mu..s and a pulse repetition rate up to 10 Hz. This paper describes the present configuration of these two duplicate systems and presents plans for meeting the requirements of future rf FEL experiments at Los Alamos. 12 refs., 5 figs.

Johnson, W.J.D.; Lynch, M.T.; Tallerico, P.J.; Keffeler, D.R.; Hornkohl, J.O.

1987-09-01T23:59:59.000Z

333

Deeply-scaled GaN high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

Lee, Dong Seup

2014-01-01T23:59:59.000Z

334

E-Print Network 3.0 - active rf pulse Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing... the modulated envelope with the phase modulated carrier. The...

335

Wide-Range Bolometer with RF Readout TES  

E-Print Network [OSTI]

To improve both scalability and noise-filtering capability of a Transition-Edge Sensor (TES), a new concept of a thin-film detector is suggested, which is based on embedding a microbridge TES into a high-Q planar GHz range resonator weakly coupled to a 50 Ohm-readout transmission line. Such a TES element is designed as a hot-electron microbolometer coupled to a THz range antenna and as a load of the resonator at the same time. A weak THz signal coupled to the antenna heats the microbridge TES, thus reducing the quality factor of the resonator and leading to a power increment in the readout line. The power-to-power conversion gain, an essential figure of merit, is estimated to be above 10. To demonstrate the basic concept, we fabricated and tested a few submicron sized devices from Nb thin films for operation temperature about 5 K. The dc and rf characterization of the new device is made at a resonator frequency about 5.8 GHz. A low-noise HEMT amplifier is used in our TES experiments without the need for a SQU...

Shitov, S V; Kuzmin, A A; Merker, M; Arndt, M; Wuensch, S H; Ilin, K S; Erhan, E; Ustinov, A; Siegel, M

2014-01-01T23:59:59.000Z

336

Superconducting RF Linac Technology for ERL Light Sources  

SciTech Connect (OSTI)

Energy Recovering Linacs (ERLs) offer an attractive alternative as drivers for light sources as they combine the desirable characteristics of both storage rings (high efficiency) and linear accelerators (superior beam quality). Using superconducting RF technology allows ERLs to operate more efficiently because of the inherent characteristics of SRF linacs, namely that they are high gradient-low impedance structures and their ability to operate in the long pulse or CW regime. We present an overview of the physics challenges encountered in the design and operation of ERL based light sources with particular emphasis on those issues related to SRF technology. These challenges include maximizing a cavity�������¢����������������s Qo to increase cryogenic efficiency, maintaining control of the cavity field in the presence of the highest feasible loaded Q and providing adequate damping of the higher-order modes (HOMs). If not sufficiently damped, dipole HOMs can drive the multipass beam breakup (BBU) instability which ERLs are particularly susceptible to. Another challenge involves efficiently extracting the potentially large amounts of HOM power that are generated when a bunch traverses the SRF cavities and which may extend over a high range of frequencies. We present experimental data from the Jefferson Lab FEL Upgrade, a 10 mA ERL light source presently in operation, aimed at addressing some of these issues. We conclude with an outlook towards the future of ERL based light sources.

Chris Tennant

2005-08-01T23:59:59.000Z

337

Comparison of the theory and the practice of rf current drive  

SciTech Connect (OSTI)

The theory of rf-driven plasma currents is applied to the lower-hybrid experiments on the PLT tokamak. Particular emphasis is placed on those experiments in which the plasma current was varying. The comparison between theory and experiment is made with respect to the efficiency with which rf energy was converted to poloidal magnetic field energy. Good agreement is found irrespective of whether the current was increasing, constant, or decreasing.

Karney, C.F.F.; Fisch, N.J.; Jobes, F.C.

1984-10-01T23:59:59.000Z

338

Laser cooling and sympathetic cooling in a linear quadrupole rf trap  

E-Print Network [OSTI]

LASER COOLING AND SYMPATHETIC COOLING IN A LINEAR QUADRUPOLE RF TRAP A Dissertation by VLADIMIR LEONIDOVICH RYJKOV Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree... of DOCTOR OF PHILOSOPHY December 2003 Major Subject: Physics LASER COOLING AND SYMPATHETIC COOLING IN A LINEAR QUADRUPOLE RF TRAP A Dissertation by VLADIMIR LEONIDOVICH RYJKOV Submitted to Texas A&M University in partial fulfillment of the requirements...

Ryjkov, Vladimir Leonidovich

2005-02-17T23:59:59.000Z

339

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

340

Thermodynamic properties and interfacial layer characteristics of HfO{sub 2} thin films deposited by plasma-enhanced atomic layer deposition  

SciTech Connect (OSTI)

The thermodynamic properties and interfacial characteristics of HfO{sub 2} thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited HfO{sub 2} films that were deposited by the DPALD method show crystallization of the HfO{sub 2} layers, which initiates at approximately the 35th cycle (about 2.8 nm) of the DPALD process. Medium-energy ion scattering analysis reveals that the direct O{sub 2} plasma causes a compositional change in the interfacial layer as the process progresses. With an increase in the number of process cycles, the Si content decreases and the O content increases at that position, so that the HfO{sub 2}-like Hf-silicate layer is formed on top of the interfacial layer. The enhanced physical reactivity of the oxygen ions in the direct plasma and the Hf-silicate layer may be the driving forces that accelerate the early crystallization of the HfO{sub 2} layer in the DPALD process in the as-deposited state.

Kim, Inhoe; Kuk, Seoungwoo; Kim, Seokhoon; Kim, Jinwoo; Jeon, Hyeongtag; Cho, M.-H.; Chung, K.-B. [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Korea Research Institute of Standard and Science, Daejeon 305-600 (Korea, Republic of)

2007-05-28T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Creep strength of niobium alloys, Nb-1%Zr and PWC-11  

SciTech Connect (OSTI)

A study is being conducted at NASA Lewis Research Center to determine the feasibility of using a carbide particle strengthened Nb-1% Zr base alloy to meet the anticipated temperature and creep resistance requirements of proposed near term space power systems. In order to provide information to aid in the determination of the suitability of the PWC-11 alloy as an alternative to Nb-1% Zr in space power systems this study investigated (1) the long-time high-vacuum creep behavior of the PWC-11 material and the Nb-1% Zr alloy, (2) the effect of prior stress-free thermal aging on this creep behavior, (3) the effect of electron beam (EB) welding on this creep behavior, and (4) the stability of creep strengthening carbide particles. 14 refs., 5 figs., 2 tabs.

Titran, R.H.

1990-01-01T23:59:59.000Z

342

Identification of a quasiparticle band in very neutron-rich {sup 104}Zr  

SciTech Connect (OSTI)

The high spin levels of a very neutron-rich {sup 104}Zr nucleus have been reinvestigated by measuring the prompt {gamma} rays in the spontaneous fission of {sup 252}Cf. The ground-state band has been confirmed. A new sideband has been identified with a band-head energy at 1928.7 keV. The projected shell model is employed to investigate the band structure of {sup 104}Zr. The results of calculated levels are in good agreement with the experimental data, and suggest that the new band in {sup 104}Zr may be based on the neutron {nu}5/2{sup -}[532] x {nu}3/2{sup +}[411] configuration.

Yeoh, E. Y.; Wang, J. G.; Ding, H. B.; Gu, L.; Xu, Q.; Xiao, Z. G. [Department of Physics, Tsinghua University, Beijing 100084 (China); Zhu, S. J. [Department of Physics, Tsinghua University, Beijing 100084 (China); Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Hamilton, J. H.; Ramayya, A. V.; Hwang, J. K.; Liu, S. H. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Liu, Y. X. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); School of Science, Huzhou Teachers College, Huzhou 313000 (China); Sun, Y. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 (China); Luo, Y. X. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Rasmussen, J. O.; Lee, I. Y. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2010-08-15T23:59:59.000Z

343

Photocatalytic studies of Ho–Zr–O nano-composite with controllable composition and defects  

SciTech Connect (OSTI)

With the help of sol–gel method assisted by melting salt, a series of Ho–Zr–O nano-composite with controllable composition and defects have been successfully prepared. Characterization results show that the positions, intensity, and width of the X-ray diffraction peaks of the products have a regular variation with the increase of zirconium element which implies the gradual changes of crystal spacing and product size. At the same time, the molar ratios between holmium and zirconium ions are consistent with the chemical formula and both of them are uniformly distributed in products further showing the perfect formation of targeted materials. Optical properties reveal that diversified defect forms of Ho–Zr–O nano-composite lead to the different absorptions of visible light. Photocatalytic experiments demonstrate Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals have excellent visible-light-responsive photocatalytic activities on some familiar dyes (e.g.: methylene blue and Rhodamine B) which results from the special defect structure, better absorption of visible light and larger specific surface area. It follows that Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals are a new kind of visible-light-responsive photocatalysts with better prospects in conversion and utilization of solar energy. Also, the present melting salt assisted route might be generalized to synthesize other AxByOz composite oxide nano-crystals with more complicated structures. - Highlights: • Ho–Zr–O nano-composite with controllable composition and defects has been obtained. • Diversified defect forms of products lead to the different visible light absorption. • Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals have excellent photocatalytic activities.

Du, Weimin, E-mail: duweimin75@gmail.com [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455000 (China); Zhao, Guoyan; Chang, Hongxun; Shi, Fei; Zhu, Zhaoqiang [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455000 (China); Qian, Xuefeng [School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240 (China)

2013-09-15T23:59:59.000Z

344

Total ionizing dose effect of ?-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory  

SciTech Connect (OSTI)

The total ionizing dose (TID) effect of gamma-ray (?-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ?5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy ?-ray exposure.

Fang, Runchen; Yu, Shimeng, E-mail: shimengy@asu.edu [School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

2014-05-05T23:59:59.000Z

345

Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range  

SciTech Connect (OSTI)

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

2012-10-31T23:59:59.000Z

346

Deformation Mechanisms in Tube Billets from Zr-1%Nb Alloy under Radial Forging  

SciTech Connect (OSTI)

Features of the deformation process by cold radial forging of tube billets from Zr-1%Nb alloy were reconstructed on the basis of X-ray data concerning their structure and texture. The cold radial forging intensifies grain fragmentation in the bulk of billet and increases significantly the latent hardening of potentially active slip systems, so that operation only of the single slip system becomes possible. As a result, in radially-forged billets unusual deformation and recrystallization textures arise. These textures differ from usual textures of {alpha}-Zr by the mutual inversion of crystallographic axes, aligned along the axis of tube.

Perlovich, Yuriy; Isaenkova, Margarita; Fesenko, Vladimir; Krymskaya, Olga [National Research Nuclear University 'Moscow Engineering Physics Institute', Kashirskoe shosse, 31, Moscow, 115409 (Russian Federation); Zavodchikov, Alexander [Perm Research Technological Institute, Hasan Heroes street, 41, Perm, 614990 (Russian Federation)

2011-05-04T23:59:59.000Z

347

Galactic Evolution of Sr, Y, Zr: A Multiplicity of Nucleosynthetic Processes  

E-Print Network [OSTI]

We follow the Galactic enrichment of three easily observed light n-capture elements Sr,Y,and Zr.Input stellar yields have been first separated into their respective main and weak s-process,and r-process components.The s-process yields from AGB stars are computed,exploring a wide range of efficiencies of the major neutron source,13C,and covering both disk and halo metallicities.AGBs have been shown to reproduce the main s-component in the solar system.The concurrent weak s-process,which accounts for the major fraction of the light s-process isotopes in the solar system and occurs in massive stars by the operation of the 22Ne n-source,is discussed in detail.Neither the main s-,nor the weak s-components are shown to contribute significantly to the n-capture element abundances observed in unevolved halo stars.We present a detailed analysis of a large database of spectroscopic observations of Sr,Y,Zr, Ba,and Eu for Galactic stars at various metallicities.Spectroscopic observations of Sr,Y,and Zr to Ba and Eu abundance ratios versus metallicity provide useful diagnostics of the types of n-capture processes forming Sr,Y and Zr.The observed [Sr,Y,Zr/Ba,Eu] ratio is clearly not flat at low metallicities,as we would expect if Ba,Eu and Sr,Y,Zr all had the same r-process origin.We discuss our chemical evolution predictions, taking into account the interplay between different processes to produce Sr-Y-Zr.We find hints for a primary process in low-metallicity massive stars, different from the 'classical s-process' and from the 'classical r-process',that we tentatively define LEPP (Lighter Element Primary Process).This allows us to revise the estimates of the r-process contributions to the solar Sr,Y and Zr abundances,as well as of the contribution to the s-only isotopes 86Sr,87Sr,96Mo.

Claudia Travaglio; Roberto Gallino; Enrico Arnone; John Cowan; Faith Jordan; Chris Sneden

2003-10-07T23:59:59.000Z

348

Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering  

SciTech Connect (OSTI)

Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}?(001){sub MgO} and [100]{sub ZrN}?[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ?{sub 300K} of 12.0 ??-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup ?8}?-cm K{sup ?1}, a residual resistivity ?{sub o} below 30 K of 0.78 ??-cm (corresponding to a residual resistivity ratio ?{sub 300?}/?{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ?{sub ?} = 18 nm and ?{sub ?} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.

Mei, A. B.; Zhang, C.; Sardela, M.; Eckstein, J. N.; Rockett, A. [Departments of Materials Science, Physics, and the Materials Research Laboratory, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 (United States)] [Departments of Materials Science, Physics, and the Materials Research Laboratory, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 (United States); Howe, B. M. [Air Force Research Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433-7817 (United States)] [Air Force Research Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433-7817 (United States); Hultman, L. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-58183 Linköping (Sweden)] [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-58183 Linköping (Sweden); Petrov, I.; Greene, J. E. [Departments of Materials Science, Physics, and the Materials Research Laboratory, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 and Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-58183 Linköping (Sweden)] [Departments of Materials Science, Physics, and the Materials Research Laboratory, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 and Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-58183 Linköping (Sweden)

2013-11-15T23:59:59.000Z

349

Am phases in the matrix of a U-Pu-Zr alloy with Np, Am, and rare-earth elements  

SciTech Connect (OSTI)

Phases and microstructures in the matrix of an as-cast U-Pu-Zr alloy with 3 wt% Am, 2% Np, and 8% rare-earth elements were characterized by scanning and transmission electron microscopy. The matrix consists primarily of two phases, both of which contain Am: ?-(U, Np, Pu, Am) (~70 at% U, 5% Np, 14% Pu, 1% Am, and 10% Zr) and ?-(U, Np, Pu, Am)Zr2 (~25% U, 2% Np, 10-15% Pu, 1-2% Am, and 55-60 at% Zr). These phases are similar to those in U-Pu-Zr alloys, although the Zr content in ?-(U, Np, Pu, Am) is higher than that in ?-(U, Pu) and the Zr content in ?-(U, Np, Pu, Am)Zr2 is lower than that in ?-UZr2. Nanocrystalline actinide oxides with structures similar to UO2 occurred in some areas, but may have formed by reactions with the atmosphere during sample handling. Planar features consisting of a central zone of ?-(U, Np, Pu, Am) bracketed by zones of ?-(U, Np, Pu, Am)Zr2 bound irregular polygons ranging in size from a few micrometers to a few tens of micrometers across. The rest of the matrix consists of elongated domains of ?-(U, Np, Pu, Am) and ?-(U, Np, Pu, Am)Zr2. Each of these domains is a few tens of nanometers across and a few hundred nanometers long. The domains display strong preferred orientations involving areas a few hundred nanometers to a few micrometers across.

Dawn E Janney; J. Rory Kennedy; James W. Madden; Thomas P. O'Holleran

2015-01-01T23:59:59.000Z

350

Diffusional Interaction between U – 10wt.% Zr and Fe at 903K, 923K and 953K  

SciTech Connect (OSTI)

U-Zr metallic fuels cladded in Fe-alloys are being considered for application in an advanced Sodium-Cooled Fast Reactor (SFR) that can recycle the U-Zr fuels and minimize the long-lived actinide waste. To understand the complex fuel-cladding chemical interaction between the U-Zr metallic fuel with Fe-alloys, a systematic multicomponent diffusion study was carried out using solid-to-solid diffusion couples. The U-10 wt.% Zr vs. pure Fe diffusion couples were assembled and annealed at temperatures, 903, 923 and 953K for 96 hours. Development of microstructure, phase constituents, and compositions developed during the thermal anneals were examined by scanning electron microscopy, transmission electron microscopy and X-ray energy dispersive spectroscopy. Complex microstructure consisting of several layers that include phases such as U6Fe, UFe2, ZrFe2, alpha-U, betha-U, Zr-precipitates, ?, e and ? were observed. Multi-phase layers were grouped based on phase constituents and microstructure, and the layer thicknesses were measured to calculate the growth constant and activation energy. The local average compositions through the interaction layer were systematically determined, and employed to construct semi-quantitative diffusion paths on isothermal U-Zr-Fe ternary phase diagrams at respective temperatures. The diffusion paths were examined to qualitatively estimate the diffusional behavior of individual components and their interactions. Furthermore, selected area diffraction analyses were carried out to determine, for the first time, the exact crystal structure and composition of ?, e and ?-phases. The ?, e and ?-phases were identified as Pnma(62) Fe(Zr,U), I4/mcm(140) Fe(Zr,U)2, and I4/mcm(140) U3(Zr,Fe), respectively.

K Y. Park; K. Huang; A. Ewh; Y.H. Sohn; B. H. Sencer; J. R. Kennedy

2015-01-01T23:59:59.000Z

351

RF properties of periodic accelerating structures for linear colliders  

SciTech Connect (OSTI)

With the advent of the SLAC electron-positron linear collider (SLC) in the 100 GeV center-of-mass energy range, research and development work on even higher energy machines of this type has started in several laboratories in the United States, Europe, the Soviet Union and Japan. These linear colliders appear to provide the only promising approach to studying e/sup /plus//e/sup /minus// physics at center-of-mass energies approaching 1 TeV. This thesis concerns itself with the study of radio frequency properties of periodic accelerating structures for linear colliders and their interaction with bunched beams. The topics that have been investigated are: experimental measurements of the energy loss of single bunches to longitudinal modes in two types of structures, using an equivalent signal on a coaxial wire to simulate the beam; a method of canceling the energy spread created within a single bunch by longitudinal wakefields, through appropriate shaping of the longitudinal charge distribution of the bunch; derivation of the complete transient beam-loading equation for a train of bunches passing through a constant-gradient accelerator section, with application to the calculation and minimization of multi-bunch energy spread; detailed study of field emission and radio frequency breakdown in disk-loaded structures at S-, C- and X-band frequencies under extremely high-gradient conditions, with special attention to thermal effects, radiation, sparking, emission of gases, surface damage through explosive emission and its possible control through RF-gas processing. 53 refs., 49 figs., 9 tabs.

Wang, J.W.

1989-07-01T23:59:59.000Z

352

Experimental Studies of Light Emission Phenomena in Superconducting RF Cavitites  

SciTech Connect (OSTI)

Experimental studies of light emission phenomena in superconducting RF cavities, which we categorize under the general heading of cavity lights, are described. The cavity lights data, which were obtained using a small CCD video camera, were collected in a series of nine experimental runs ranging from {approx} 1/2 to {approx} 2 h in duration. The video data were recorded on a standard VHS tape. As the runs progressed, additional instrumentation was added. For the last three runs a LabVIEW controlled data acquisition system was included. These runs furnish evidence for several, possibly related, light emission phenomena. The most intriguing of these is what appear to be small luminous objects {le} 1.5 mm in size, freely moving about in the vacuum space, generally without wall contact, as verified by reflections of the tracks in the cavity walls. In addition, on a number of occasions, these objects were observed to bounce off of the cavity walls. The wall-bounce aspect of most of these events was clearly confirmed by pre-bounce and post-bounce reflections concurrent with the tracks. In one of the later runs, a mode of behavior was observed that was qualitatively different from anything observed in the earlier runs. Perhaps the most perplexing aspect of this new mode was the observation of as many as seven luminous objects arrayed in what might be described as a macromolecular formation, coherently moving about in the interior of the cavity for extended periods of time, evidently without any wall contact. It is suggested that these mobile luminous objects are without explanation within the realm of established physics. Some remarks about more exotic theoretical possibilities are made, and future plans are discussed.

Anthony, P.L.; /SLAC; Delayen, J.R.; /Jefferson Lab; Fryberger, D.; /SLAC; Goree, W.S.; Mammosser, J.; /Jefferson Lab /SNS Project, Oak Ridge; Szalata, Z.M.; II, J.G.Weisend /SLAC

2009-08-04T23:59:59.000Z

353

Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO{sub 2} and oxygen-deficient silicon centers within the SiO{sub 2}/Si interface  

SciTech Connect (OSTI)

We compare the charging response of rapid thermally annealed (800 and 1000 deg. C) 4 nm thick HfO{sub 2} to as-deposited HfO{sub 2} on Si by measuring the surface potential of the HfO{sub 2} layers after vacuum ultraviolet (VUV) irradiation with 11.6 eV photons. From VUV spectroscopy, we determined all HfO{sub 2} layers show the presence of oxygen-interstitial defects (OIDs). The electronic states of OID in HfO{sub 2} line up in energy with oxygen-deficient Si centers within the SiO{sub 2} interfacial layer. This implies charge exchange between OIDs within HfO{sub 2} and the O-deficient silicon centers within the SiO{sub 2} interfacial layer are very important for controlling the radiation-induced trapped charge in HfO{sub 2} dielectric stacks.

Lauer, J. L.; Shohet, J. L. [Department of Electrical and Computer Engineering and Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

2009-04-20T23:59:59.000Z

354

Comparison of Measured and Calculated Coupling between a Waveguide and an RF Cavity Using CST Microwave Studio  

SciTech Connect (OSTI)

Accurate predications of RF coupling between an RF cavity and ports attached to it have been an important study subject for years for RF coupler and higher order modes (HOM) damping design. We report recent progress and a method on the RF coupling simulations between waveguide ports and RF cavities using CST Microwave Studio in time domain (Transit Solver). Comparisons of the measured and calculated couplings are presented. The simulated couplings and frequencies agree within {approx} 10% and {approx} 0.1% with the measurements, respectively. We have simulated couplings with external Qs ranging from {approx} 100 to {approx} 100,000, and confirmed with measurements. The method should also work well for higher Qs, and can be easily applied in RF power coupler designs and HOM damping for normal-conducting and superconducting cavities.

J. Shi; H. Chen; S. Zheng; D. Li; R.A. Rimmer; H. Wang

2006-06-26T23:59:59.000Z

355

Modeling of Zircon (ZrSiO{sub 4}) and Zirconia (ZrO{sub 2}) using ADF-GUI Software  

SciTech Connect (OSTI)

Natural zircon (ZrSiO{sub 4}) has very high concentration of Uranium and Thorium of up to 5000 ppm. Radioactive decay process of alpha particles from these impurities affects some changes like several atomic displacements in the crystalline structure of zircon. The amount of track density caused by alpha particles decay process of these radioactive materials in zircon can be decreased with annealing temperatures from 700 deg. C to 980 deg. C. Recently it has been extensively studied as the possible candidate material for immobilization of fission products and actinides. Besides, zirconia (ZrO{sub 2}), product from natural zircon, is widely used in industrial field because it has excellent chemical and mechanical properties at high temperature. Dielectric constant of monoclinic, cubic and tetragonal ZrO{sub 2} can be found in the range of 22, 35 and 50 by computer simulation works. In recent years, atomistic simulations and modeling have been studied, because a lot of computational techniques can offer atomic-level approaching with minimum errors in estimations. One favorite methods is Density Functional Theory (DFT). In this study, ADF-GUI software from DFT will be used to calculate the frequency and absorption Intensity of zircon and zirconia molecules. The data from calculations will be verified with experimental works such as Raman Spectroscopy, AFM and XRD.

Lwin, Maung Tin Moe [Applied Radiation Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Amin, Yusoff Mohd; Kassim, Hasan Abu; Kamaluddin, Burhanuddin [Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2010-07-07T23:59:59.000Z

356

Application of new simulation algorithms for modeling rf diagnostics of electron clouds  

SciTech Connect (OSTI)

Traveling wave rf diagnostics of electron cloud build-up show promise as a non-destructive technique for measuring plasma density and the efficacy of mitigation techniques. However, it is very difficult to derive an absolute measure of plasma density from experimental measurements for a variety of technical reasons. Detailed numerical simulations are vital in order to understand experimental data, and have successfully modeled build-up. Such simulations are limited in their ability to reproduce experimental data due to the large separation of scales inherent to the problem. Namely, one must resolve both rf frequencies in the GHz range, as well as the plasma modulation frequency of tens of MHz, while running for very long simulations times, on the order of microseconds. The application of new numerical simulation techniques allow us to bridge the simulation scales in this problem and produce spectra that can be directly compared to experiments. The first method is to use a plasma dielectric model to measure plasma-induced phase shifts in the rf wave. The dielectric is modulated at a low frequency, simulating the effects of multiple bunch crossings. This allows simulations to be performed without kinetic particles representing the plasma, which both speeds up the simulations as well as reduces numerical noise from interpolation of particle charge and currents onto the computational grid. Secondly we utilize a port boundary condition model to simultaneously absorb rf at the simulation boundaries, and to launch the rf into the simulation. This method improves the accuracy of simulations by restricting rf frequencies better than adding an external (finite) current source to drive rf, and absorbing layers at the boundaries. We also explore the effects of non-uniform plasma densities on the simulated spectra.

Veitzer, Seth A.; Smithe, David N.; Stoltz, Peter H. [Tech-X Corporation, Boulder, CO, 80303 (United States)

2012-12-21T23:59:59.000Z

357

Self-assembly of Ni nanocrystals on HfO{sub 2} and N-assisted Ni confinement for nonvolatile memory application  

SciTech Connect (OSTI)

We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO{sub 2} high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO{sub 2} after high temperature annealing above 800 deg. C in N{sub 2}. However, the diffusion is suppressed by N incorporation into HfO{sub 2} by NH{sub 3} annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO{sub 2}. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a {+-}5 V sweep during capacitance-voltage electrical measurement.

Tan, Zerlinda; Samanta, S.K.; Yoo, Won Jong; Lee, Sungjoo [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2005-01-03T23:59:59.000Z

358

First in-beam observation of excited states in {sup 156}{sub 72}Hf{sub 84} using the recoul-decay tagging method  

SciTech Connect (OSTI)

Excited states in the proton rich nuclide {sup 156}{sub 72}Hf{sub 84} were observed for the first time using the {sup 102}({sup 58}Ni, 2p2n){sup 156}Hf reaction at 270 MeV. Gamma rays were detected with the AYEBALL array of Compton suppressed Ge detectors, placed in front of the Fragment Mass Analyzer, and were assigned to individual reaction charmers using the Recoil-Decay Tagging Method. Prompt {gamma}-ray cascades were associated with the alpha decay of both the ground state and the 8{sup +} isomeric state in {sup 156}Hf. The level scheme constructed for {sup 156}Hf is compared with level schemes of lighter even-even N=84 isotones and is discussed within the framework of the Shell Model.

Seweryniak, D.; Ahmad, H.; Amro, D.J. [and others

1996-12-31T23:59:59.000Z

359

Solvated Electrons in Very Small Clusters of Polar Molecules: (HF)(3)(-): art. no. 143001  

SciTech Connect (OSTI)

A cluster of polar molecules can host an excess electron in at least two ways. First, the excess electron can be tethered to the cluster by its interaction with the cluster?s dipole moment. , Second, the electron can localize inside the cluster, bulk analogs being the hydrated and ammoniated electrons. - While the structural reorganization of the cluster, due to attachment of an excess electron, is typically small for dipole-bound electrons (dbe), it is usually quite significant for''solvated electrons'' (se), since the solvation occurs at the expense of breaking of pre-existing hydrogen bonds. The se structures, however, provide more contact interactions between the polar molecules and the excess electron. For these reasons, it is often assumed that dbe's dominate for small polar clusters, whereas large clusters form se's. Here we show that dbe's and se's coexist in as small a cluster as (HF)3-. The stability of these anions with respect to the neutral cluster results not only from the excess electron binding energy but also from favorable entropic effects, which reflect the greater ''floppiness'' of the anionic structures.

Gutowski, Maciej S. (BATTELLE (PACIFIC NW LAB)); Hall, C (Arizona, University Of); Adamowicz, L (Arizona, University Of); Hendricks, J.H. (Johns Hopkins Univ); De Clercq, Helen (Howard University); Lyapustina, S.A. (Johns Hopkins Univ); Nilles, J.M. (Johns Hopkins Univ); Xu, S.J. (Johns Hopkins Univ); Bowen Jr., K.H. (Johns Hopkins Univ)

2001-12-01T23:59:59.000Z

360

Temperature dependent structural, optical and hydrophobic properties of sputtered deposited HfO{sub 2} films  

SciTech Connect (OSTI)

Hafnium oxide being high-k dielectric has been successfully utilized in electronic and optical applications. Being thermodynamically stable and having good mechanical strength, it can be used as a protective coating for outdoor HV insulators which are suffering from surface flashover problem due to contamination. In this paper, we are investigating the effect of substrate temperature on structural, optical and hydrophobic properties of hafnium oxide coating deposited over glass insulators by DC magnetron sputtering. X-ray diffraction is applied to determine the crystalline phase and crystallite size of the film. The morphology of the samples is examined using atomic force microscopy. The optical properties are studied using UV-vis-NIR spectrophotometer. The wettability of the film is investigated using contact angle meter. The thickness is measured using surface profilometer and verified through optical data. The relationship between substrate temperature with grain size, roughness, refractive index, and hydrophobicity is manifested. The maximum contact angle for HfO{sub 2} film was found to be 106° at 400°C.

Dave, V. [Department of Electrical Engineering, IIT Roorkee (India); Institute Instrumentation Centre, IIT Roorkee (India); Dubey, P.; Chandra, R. [Institute Instrumentation Centre, IIT Roorkee (India); Gupta, H. O. [Department of Electrical Engineering, IIT Roorkee (India)

2014-01-28T23:59:59.000Z

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361

Complexity of shear localization in a Zr-based bulk metallic glass  

E-Print Network [OSTI]

University of Aeronautics and Astronautics, Beijing 100191, China The compressive behaviour of a Zr. A significant advance occurred when compositions and copper mold casting method allowing for bulk material the consequence of) macroscopic shear banding remains unclear. It is therefore important to carry out in situ

362

Complexity of shear localization in a Zr-based bulk metallic glass  

E-Print Network [OSTI]

University of Aeronautics and Astronautics, Beijing 100191, China The compressive behaviour of a Zr. A significant advance occurred when compositions and copper mold casting method allowing for bulk material unclear. It is therefore important to carry out in situ observations of plastic deformation processes

363

Stress-corrosion fatiguecrack growth in a Zr-based bulk amorphous metal  

E-Print Network [OSTI]

Stress-corrosion fatigue­crack growth in a Zr-based bulk amorphous metal V. Schroeder 1 , R metallic glass; Amorphous metal; Fatigue; Stress corrosion; Crack growth 1. Introduction In recent years­crack growth resistance [1­5], its corresponding properties in the presence of a corrosive environment have

Ritchie, Robert

364

Phase Stability and Thermodynamic Assessment of the Np-Zr system  

E-Print Network [OSTI]

Metallic fuels have an important role to play in "fast breeder" Gen-IV type nuclear reactors, and U-Pu-Zr is one of the prototypical systems. Because of the variability in fuel chemistry during burn-up, it is important to understand the effect...

Bajaj, Saurabh

2012-02-14T23:59:59.000Z

365

Discovery of Critical Oxygen Content for Glass Formation in Zr80Pt20 Melt Spun Ribbons  

SciTech Connect (OSTI)

Zr{sub 80}Pt{sub 20} alloys may form meta-stable quasicrystals either during devitrification of an amorphous phase or directly upon cooling from a liquid depending on processing conditions. To date, little attention has been given to the role of oxygen on the glass formation or devitrification behavior of Zr-Pt and similar alloys. This study reveals that oxygen content during melt spinning indeed strongly influences the formation of the as-quenched structure. A critical amount of oxygen was found to be required to form amorphous ribbons at a fixed quench rate. At lower oxygen levels (i.e., <500 ppm mass), a fully crystallized is formed; the structure is composed mainly of meta-stable {beta}-Zr with a small fraction of a quasicrystalline phase. At higher oxygen levels, the as-quenched structure transitions to a fully amorphous structure ({approx}1000 ppm mass), and with further oxygen addition forms a mixture of amorphous and quasicrystalline ({approx}1500 ppm mass) or crystalline phases (>2500 ppm mass). Details regarding the structure of the meta-stable {beta}-Zr phase in the low-oxygen ribbons are provided along with a discussion of the structural similarity between this phase and the quasicrystal structure that formed in this alloy.

D.J. Sordelet; E.A. Rozhkova; X. Yang; M.J. Kramer

2004-09-30T23:59:59.000Z

366

Oxide Electronic Conductivity and Hydrogen Pickup Fraction in Zr alloys Adrien Coueta  

E-Print Network [OSTI]

hydrogen ingress can cause cladding embrittlement and limit cladding lifetime. However, mechanisticOxide Electronic Conductivity and Hydrogen Pickup Fraction in Zr alloys Adrien Coueta , Arthur T, 77818 Moret-sur-Loing, France INTRODUCTION The hydrogen pick-up during cladding corrosion is a critical

Motta, Arthur T.

367

Chemical Synthesis of Pure and Gd-doped CaZrO3 Powders  

E-Print Network [OSTI]

chemical synthesis techniques: (i) self-propagating combustion synthesis, and (ii) precipitation potential use as a high-temperature thermistor material.8 The electrical response of calcium zirconate (preChemical Synthesis of Pure and Gd-doped CaZrO3 Powders I. Erkin Gonenli a and A. CuĂ? neyt Tas b

Tas, A. Cuneyt

368

Thermoluminescence of ZrSiO4 (zircon): A new dating method?  

E-Print Network [OSTI]

Thermoluminescence of ZrSiO4 (zircon): A new dating method? H.J. van Es a , D.I. Vainshtein a , A (TL) dating of sediments from the Quaternary. TL of zircon results predominantly from internal0168-583X(02)00627-4 #12;Heavily damaged grains significantly reduce the thermoluminescence (TL) light

Donoghue, Joseph

369

Defining the Proton Topology of the Zr6Based Metal-Organic Framework NU-1000  

E-Print Network [OSTI]

,16-19 heavy metal capture,20,21 sensing,12 ionic conductivity,22 toxic industrial chemical capture,23Defining the Proton Topology of the Zr6Based Metal-Organic Framework NU-1000 Nora Planas,, Joseph E of Science, King Abdulaziz University, Jeddah, Saudi Arabia *S Supporting Information ABSTRACT: Metal

370

High temperature ablation resistance of ZrNp reinforced W matrix composites  

E-Print Network [OSTI]

modulus of elasticity, good thermal shock resistance, stiffness and good high temperature strengthHigh temperature ablation resistance of ZrNp reinforced W matrix composites Malik Adeel Umer microscopy (SEM) For the purpose of improving the high temperature ablation resistance of tungsten

Hong, Soon Hyung

371

Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru  

SciTech Connect (OSTI)

The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ? 9.5 × 10{sup 19}?5.7 × 10{sup 20} cm{sup ?3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ?1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1?x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstrygach Institute for Applied Problems in Mechanics and Mathematics (Ukraine); Rogl, P. [Universität Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University Lvivska Politekhnika (Ukraine); Stadnyk, Yu. V. [Ivan Franko National University of Lviv (Ukraine); Korzh, R. O.; Krayovskyy, V. Ya. [National University Lvivska Politekhnika (Ukraine); Horyn, A. M. [Ivan Franko National University of Lviv (Ukraine)

2014-12-15T23:59:59.000Z

372

Highly efficient dye-sensitized solar cells based on HfO{sub 2} modified TiO{sub 2} electrodes  

SciTech Connect (OSTI)

Graphical abstract: Display Omitted Highlights: ? HfO{sub 2} has been used to modify TiO{sub 2} electrodes in dye sensitized solar cells. ? HfO{sub 2} layer increases the dye adsorption. ? Diffusion coefficient (D{sub e}) and lifetime (?{sub e}) of the photoelectrons were increased. ? Solar cell efficiency (?) was greatly improved from 5.67 to 9.59%. -- Abstract: In this article, we describe the use of hafnium oxide (HfO{sub 2}) as a new and efficient blocking layer material to modify TiO{sub 2} electrodes in dye sensitized solar cells. Different thicknesses of HfO{sub 2} over-layers were prepared by simple dip coating from two different precursors and their effects on the performance of DSSCs were studied. The HfO{sub 2} modification remarkably increases dye adsorption, resulting from the fact that the surface of HfO{sub 2} is more basic than that of TiO{sub 2}. Furthermore, the HfO{sub 2} coating demonstrated increased diffusion coefficient (D{sub e}) and lifetime (?{sub e}) of the photoelectrons, indicating the improved retardation of the back electron transfer, which increases short-circuit current (J{sub sc}) and open-circuit voltage (V{sub oc}). Thereby, the photo conversion efficiency (?) of the solar cell was greatly improved from 5.67 to 9.59% (an improvement of 69.02%) as the HfO{sub 2} layer was coated over TiO{sub 2} films.

Ramasamy, Parthiban [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)] [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of); Kang, Moon-Sung; Cha, Hyeon-Jung [Department of Environmental Engineering, Sangmyung University, 300 Anseo-dong, Dongnam-gu, Cheonan-si, Chungnam 330-720 (Korea, Republic of)] [Department of Environmental Engineering, Sangmyung University, 300 Anseo-dong, Dongnam-gu, Cheonan-si, Chungnam 330-720 (Korea, Republic of); Kim, Jinkwon, E-mail: jkim@kongju.ac.kr [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)] [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)

2013-01-15T23:59:59.000Z

373

Stabilizing effect of a double-harmonic RF system in the CERN PS  

SciTech Connect (OSTI)

Motivated by the discussions on scenarios for LHC upgrades, beam studies on the stability of flat bunches in a double-harmonic RF system have been conducted in the CERN Proton Synchrotron (PS). Injecting nearly nominal LHC beam intensity per cycle, 18 bunches are accelerated on harmonic h = 21 to 26GeV with the 10MHz RF system. On the flat-top, all bunches are then transformed to flat bunches by adiabatically adding RF voltage at h = 42 from a 20 MHz cavity in anti-phase to the h = 21 system. The voltage ratio V (h42)/V (h21) of about 0.5 was set according to simulations. For the next 140 ms, longitudinal profiles show stable bunches in the double-harmonic RF bucket until extraction. Without the second harmonic component, coupled-bunch oscillations are observed. The flatness of the bunches along the batch is analyzed as a measure of the relative phase error between the RF systems due to beam loading. The results of beam dynamics simulations and their comparison with the measured data are presented.

Bhat, C.; /Fermilab; Caspers, F.; Damerau, H.; Hancock, S.; Mahner, E.; Zimmermann, F.; /CERN

2009-04-01T23:59:59.000Z

374

Simulation of RF Cavity Dark Current In Presence of Helical Magnetic Field  

SciTech Connect (OSTI)

In order to produce muon beam of high enough quality to be used for a Muon Collider, its large phase space must be cooled several orders of magnitude. This task can be accomplished by ionization cooling. Ionization cooling consists of passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF cavities within a multi-Tesla solenoidal focusing channel. But first high power tests of RF cavity with beryllium windows in solenoidal magnetic field showed a dramatic drop in accelerating gradient due to RF breakdowns. It has been concluded that external magnetic fields parallel to RF electric field significantly modifies the performance of RF cavities. However, magnetic field in Helical Cooling Channel has a strong dipole component in addition to solenoidal one. The dipole component essentially changes electron motion in a cavity compare to pure solenoidal case, making dark current less focused at field emission sites. The simulation of dark current dynamic in HCC performed with CST Studio Suit is presented in this paper.

Romanov, Gennady; Kashikhin, Vladimir; /Fermilab

2012-05-01T23:59:59.000Z

375

Structure and dielectric properties of La{sub x}Hf{sub (1?x)}O{sub y} thin films: The dependence of components  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • La{sub x}Hf{sub (1?x)}O{sub y} thin films were grown by pulse laser deposition method. • The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase. • The amorphous thin films due to more La introduced have almost same local structure. • The main infrared phonon modes move to lower frequency for the amorphous thin films. • The static dielectric constants of the amorphous thin films increase with La content. - Abstract: La{sub x}Hf{sub (1?x)}O{sub y} (x = 0, 0.1, 0.3, 0.5, 0.7, y=2?(1/2)x) thin films were grown by pulsed laser deposition (PLD) method. The component dependence of the structure and vibration properties of these thin films is studied by combining X-ray diffraction, X-ray absorption fine structure (XAFS) and infrared spectroscopy. The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase and it has the largest static dielectric constant. More La atoms introduced cause amorphous phase formed and the static dielectric constants increase with the La content. Although XAFS indicates that these amorphous thin films have almost same local structures, the infrared phonon modes with most contribution to the static dielectric constant move to lower frequency, which results in the component dependence of the dielectric constant.

Qi, Zeming, E-mail: zmqi@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Cheng, Xuerui [Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002 (China); Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li, Tingting [Institute of Microelectronics of Chinese Academy of Science, Beijing 100029 (China); Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)

2013-07-15T23:59:59.000Z

376

Composition and grain size effects on the structural and mechanical properties of CuZr nanoglasses  

SciTech Connect (OSTI)

Nanoglasses (NGs), metallic glasses (MGs) with a nanoscale grain structure, have the potential to considerably increase the ductility of traditional MGs while retaining their outstanding mechanical properties. We investigated the effects of composition on the structural and mechanical properties of CuZr NG films with grain sizes between 3 to 15?nm using molecular dynamics simulations. Results indicate a transition from localized shear banding to homogeneous superplastic flow with decreasing grain size, although the critical average grain size depends on composition: 5?nm for Cu{sub 36}Zr{sub 64} and 3?nm for Cu{sub 64}Zr{sub 36}. The flow stress of the superplastic NG at different compositions follows the trend of the yield stress of the parent MG, i.e., Cu{sub 36}Zr{sub 64} yield/flow stress: 2.54?GPa/1.29?GPa and Cu{sub 64}Zr{sub 36} yield/flow stress: 3.57?GPa /1.58?GPa. Structural analysis indicates that the differences in mechanical behavior as a function of composition are rooted at the distinct statistics of prominent atomic Voronoi polyhedra. The mechanical behavior of NGs is also affected by the grain boundary thickness and the fraction of atoms at interfaces for a given average grain size. The results suggest that the composition dependence of the mechanical behavior of NGs follows that of their parent MGs, e.g., a stronger MG will generate a stronger NG, while the intrinsic tendency for homogeneous deformation occurring at small grain size is not affected by composition.

Adibi, Sara [Institute of High Performance Computing, A*STAR, 138632 Singapore (Singapore); Mechanical Engineering Department, National University of Singapore, 117576 Singapore (Singapore); Branicio, Paulo S., E-mail: branicio@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, 138632 Singapore (Singapore); Joshi, Shailendra P., E-mail: Shailendra@nus.edu.sg [Mechanical Engineering Department, National University of Singapore, 117576 Singapore (Singapore)

2014-07-28T23:59:59.000Z

377

Phase-resolved optical emission of dusty rf discharges: Experiment and simulation  

SciTech Connect (OSTI)

The spectral emission of atoms in a dusty radio frequence (rf) discharge plasma in argon and helium has been measured with a gated ICCD camera. The spatially and temporally resolved emission/excitation of the argon and helium atoms during the rf cycle in the dusty discharge was compared to the dust-free case. In the bulk plasma above the dust cloud, the emission is clearly enhanced in the dusty discharge with respect to the pure discharge, whereas in the sheath the emission is reduced. In addition, the emission of a dusty argon plasma is studied via particle-particle particle-mesh (P{sup 3}M) simulations. The rf dynamics with a single dust particle trapped in the sheath was calculated. Like in the experiment the dust modifies the atomic emission. The spatiotemporal excitation pattern of the experiment is reproduced and a detailed understanding of the difference in excitation of the discharge with and without dust is presented.

Melzer, Andre; Huebner, Simon; Lewerentz, Lars; Schneider, Ralf [Institut fuer Physik, Ernst-Moritz-Arndt-Universiaet, D-17489 Greifswald (Germany); Matyash, Konstantin [Max-Planck Institut fuer Plasmaphysik, EURATOM Association, D-17491 Greifswald (Germany); Ikkurthi, Ramana [Institute for Plasma Research, Bhat, Ghandinagar, Gujarat (India)

2011-03-15T23:59:59.000Z

378

RF transmission line and drill/pipe string switching technology for down-hole telemetry  

DOE Patents [OSTI]

A modulated reflectance well telemetry apparatus having an electrically conductive pipe extending from above a surface to a point below the surface inside a casing. An electrical conductor is located at a position a distance from the electrically conductive pipe and extending from above the surface to a point below the surface. Modulated reflectance apparatus is located below the surface for modulating well data into a RF carrier transmitted from the surface and reflecting the modulated carrier back to the surface. A RF transceiver is located at the surface and is connected between the electrically conductive pipe and the electrical conductor for transmitting a RF signal that is confined between the electrically conductive well pipe and the electrical conductor to the modulated reflectance apparatus, and for receiving reflected data on the well from the modulated reflectance apparatus.

Clark, David D. (Santa Fe, NM); Coates, Don M. (Santa Fe, NM)

2007-08-14T23:59:59.000Z

379

Precision Vector Control of a Superconducting RF Cavity driven by an Injection Locked Magnetron  

E-Print Network [OSTI]

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRF cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.

Chase, Brian; Cullerton, Ed; Varghese, Philip

2015-01-01T23:59:59.000Z

380

Precision Vector Control of a Superconducting RF Cavity driven by an Injection Locked Magnetron  

E-Print Network [OSTI]

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRF cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.

Brian Chase; Ralph Pasquinelli; Ed Cullerton; Philip Varghese

2014-11-21T23:59:59.000Z

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381

Final Technical Report- Back-gate Field Emission-based Cathode RF Electron Gun  

SciTech Connect (OSTI)

The objective was to complete the design of an electron gun which utilizes a radio frequency (RF) power source to apply a voltage to a field emission (FE) cathode, a so called cold cathode, in order to produce an electron beam. The concept of the RF electron gun was originally conceived at Argonne National Laboratory but never reduced to practice. The research allowed the completion of the design based upon the integration of the FE electron source. Compared to other electron guns, the RF gun is very compact, less than one third the size of other comparable guns, and produces a high energy (to several MeV), high quality, high power electron beam with a long focal length with high repetition rates. The resultant electron gun may be used in welding, materials processing, analytical equipment and waste treatment.

McGuire, Gary; Martin, Allen; Noonan, John

2010-10-30T23:59:59.000Z

382

Effect of RF Gradient upon the Performance of the Wisconsin SRF Electron Gun  

SciTech Connect (OSTI)

The performance of the Wisconsin 200-MHz SRF electron gun is simulated for several values of the RF gradient. Bunches with charge of 200 pC are modeled for the case where emittance compensation is completed during post-acceleration to 85 MeV in a TESLA module. We first perform simulations in which the initial bunch radius is optimal for the design gradient of 41 MV/m. We then optimize the radius as a function of RF gradient to improve the performance for low gradients.

Bosch, Robert [SRC U. Wisconsin-Madison; Legg, Robert A. [JLAB

2013-12-01T23:59:59.000Z

383

Method and apparatus for transferring and injecting rf energy from a generator to a resonant load  

DOE Patents [OSTI]

Improved apparatus and method are provided for the coherent amplification and injection of radio-frequency (rf) energy into a load cavity using a plurality of amplifier tubes. A plurality of strip line cavities (30, 32, 34, 36, 40, 42, 44) are laterally joined to define a continuous closed cavity (48), with an amplifier tube (50, 52, 54, 56, 58, 60, 62, 64) mounted within each resonant strip cavity. Rf energy is injected into the continuous cavity (48) from a single input (70) for coherent coupling to all of the amplifier tubes for amplification and injection into the load cavity (76).

Hoffert, William J. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

384

The integration of Human Factors (HF) in the SAR process training course text  

SciTech Connect (OSTI)

This text provides the technical basis for a two-day course on human factors (HF), as applied to the Safety Analysis Report (SAR) process. The overall objective of this text and course is to: provide the participant with a working knowledge of human factors-related requirements, suggestions for doing a human safety analysis applying a graded approach, and an ability to demonstrate using the results of the human safety analysis, that human factors elements as defined by DOE (human factors engineering, procedures, training, oversight, staffing, qualifications), can support wherever necessary, nuclear safety commitments in the SAR. More specifically, the objectives of the text and course are: (1) To provide the SAR preparer with general guidelines for doing HE within the context of a graded approach for the SAR; (2) To sensitize DOE facility managers and staff, safety analysts and SAR preparers, independent reviewers, and DOE reviewers and regulators, to DOE Order 5480.23 requirements for HE in the SAR; (3) To provide managers, analysts, reviewers and regulators with a working knowledge of HE concepts and techniques within the context of a graded approach for the SAR, and (4) To provide SAR managers and DOE reviewers and regulators with general guidelines for monitoring and coordinating the work of preparers of HE inputs throughout the SAR process, and for making decisions regarding the safety relevance of HE inputs to the SAR. As a ready reference for implementing the human factors requirements of DOE Order 5480.22 and DOE Standard 3009-94, this course text and accompanying two-day course are intended for all persons who are involved in the SAR.

Ryan, T.G.

1995-03-01T23:59:59.000Z

385

Real-time imaging of the spatial distribution of rf-heating in NMR samples during broadband decoupling  

E-Print Network [OSTI]

by the temperature control system. Moreover, as the heating is spatially inhomogeneous, higher temperature increases of the numerical simulations. Since electric fields manifest themselves by rf-heating, the E-field distributionReal-time imaging of the spatial distribution of rf-heating in NMR samples during broadband

Wider, Gerhard

386

Open-Thru de-embedding for Graphene RF devices Giancarlo Vincenzi, George Deligeorgis, Fabio Coccetti and Patrick Pons  

E-Print Network [OSTI]

Open-Thru de-embedding for Graphene RF devices Giancarlo Vincenzi, George Deligeorgis, Fabio, LAAS, F-31400 Toulouse, France Abstract--The performances of graphene RF devices rely heavily-embedding technique adapted to the needs of microwave graphene devices is presented. Two standards and only one step

Boyer, Edmond

387

APS DPP Meeting, Quebec City Canada R V Budny 2327 October 2000 Comparison of RF-heated with  

E-Print Network [OSTI]

42 nd APS DPP Meeting, Quebec City Canada R V Budny 23­27 October 2000 JG00.293/1 Comparison of RF 2000 JG00.293/3 Conclusions Motivation ICRH ­ heated ELMy plasmas are suggested for reactor startup heated ELMy plasmas Heating power lower than desired (close to L-mode) VTor for RF in Co-Ip direction

Budny, Robert

388

Nano-fabricated superconducting radio-frequency composites, method for producing nano-fabricated superconducting rf composites  

DOE Patents [OSTI]

Superconducting rf is limited by a wide range of failure mechanisms inherent in the typical manufacture methods. This invention provides a method for fabricating superconducting rf structures comprising coating the structures with single atomic-layer thick films of alternating chemical composition. Also provided is a cavity defining the invented laminate structure.

Norem, James H.; Pellin, Michael J.

2013-06-11T23:59:59.000Z

389

Dependence of nuclear spin singlet lifetimes on RF spin-locking power Stephen J. DeVience a,  

E-Print Network [OSTI]

Dependence of nuclear spin singlet lifetimes on RF spin-locking power Stephen J. DeVience a: Received 6 January 2012 Revised 14 March 2012 Available online 28 March 2012 Keywords: Nuclear singlet of long-lived nuclear spin singlet states as a function of the strength of the RF spin-locking field

Rosen, Matthew S

390

2012 IEEE 30th VLSI Test Symposium (VTS) Towards a Fully Stand-Alone Analog/RF BIST: A  

E-Print Network [OSTI]

-effective analog/RF BIST solution must rely on low-cost measurements obtained through on-chip sensors, along to achieve a fully stand-alone analog/RF BIST solution that can be used for low-cost production test as well in the low-cost measure- ment multi-dimensional space. To investigate this approach, we have designed

Makris, Yiorgos

391

Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts  

E-Print Network [OSTI]

1 Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts Xiaoning Guo a Laboratory of Coal Conversion, Institute of Coal Chemistry, Taiyuan 030001, PR China b GREMI UMR6606 CNRS0.5O2 solid solution) modified Pd/SiC catalysts for methane combustion are studied. XRD and XPS

Paris-Sud XI, Université de

392

Ab initio investigation of phase stability of Y2Ti2O7 and Y2Zr2O7...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to the defect-cotunnite state under high pressure. Citation: Xiao HY, F Gao, and WJ Weber.2009."Ab initio investigation of phase stability of Y2Ti2O7 and Y2Zr2O7 under high...

393

Pressure Induced Structural Transformation in Gd2Ti2O7 and Gd2Zr2O7...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in determining the pressure induced phase transformation. Citation: Xiao HY, and WJ Weber.2011."Pressure Induced Structural Transformation in Gd2Ti2O7 and Gd2Zr2O7."Journal of...

394

Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications  

SciTech Connect (OSTI)

The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.

Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk [Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096 (China); Shi, R. P.; Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk [Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

2014-04-21T23:59:59.000Z

395

Particle-In-Cell/Monte Carlo Simulation of Ion Back BomBardment in a High Average Current RF Photo-Gun  

E-Print Network [OSTI]

High Average Current RF Photo-Gun J. Qiang Lawrence Berkeleyradio-frequency (RF) photo-gun using a particle-in-cell/ion motion inside the gun so that the ion power deposition

Qiang, J.

2010-01-01T23:59:59.000Z

396

Improved nuclear magnetic resonance apparatus having semitoroidal rf coil for use in topical NMR and NMR imaging  

DOE Patents [OSTI]

An improved nuclear magnetic resonance (NMR) apparatus for use in topical magnetic resonance (TMR) spectroscopy and other remote sensing NMR applications includes a semitoroidal radio frequency (rf) coil. The semitoroidal rf coil produces an effective alternating magnetic field at a distance from the poles of the coil, so as to enable NMR measurements to be taken from selected regions inside an object, particularly including human and other living subjects. The semitoroidal rf coil is relatively insensitive to magnetic interference from metallic objects located behind the coil, thereby rendering the coil particularly suited for use in both conventional and superconducting NMR magnets. The semitoroidal NMR coil can be constructed so that it emits little or no excess rf electric field associated with the rf magnetic field, thus avoiding adverse effects due to dielectric heating of the sample or to any other interaction of the electric field with the sample.

Fukushima, E.; Roeder, S.B.W.; Assink, R.A.; Gibson, A.A.V.

1984-01-01T23:59:59.000Z

397

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics  

SciTech Connect (OSTI)

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO{sub 2} and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO{sub 2}, Ru/HfO{sub 2}, and Ru/HfSiO{sub x} film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO{sub 2}, but remained stable on HfO{sub 2} at 1000 deg. C. The onset of Ru/SiO{sub 2} interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO{sub 2} thickness suggests Ru diffuses through SiO{sub 2}, followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO{sub x} samples may be due to phase separation of HfSiO{sub x} into HfO{sub 2} grains within a SiO{sub 2} matrix, suggesting that SiO{sub 2} provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO{sub 2} system at 1000 deg. C is presented.

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L. [SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741(United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States); SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Advanced Technology Development Facility (ATDF) Inc., 2706 Montopolis Drive, Austin, Texas 78741 (United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States)

2005-08-15T23:59:59.000Z

398

Electrochemical corrosion behavior of biomedical Ti22Nb and Ti22Nb6Zr alloys in saline medium  

E-Print Network [OSTI]

Electrochemical corrosion behavior of biomedical Ti­22Nb and Ti­22Nb­6Zr alloys in saline medium B addition and potentiodynamic polarization on the microstructure and corrosion resistance of Ti­22Nb and Ti­22Nb­6Zr alloy samples.The corrosion tests were carried out in 0.9% NaCl at 37 8C and neutral p

Zheng, Yufeng

399

Locating RF Emitters with Large UAV Teams Paul Scerri, Robin Glinton, Sean Owens and Katia Sycara  

E-Print Network [OSTI]

Locating RF Emitters with Large UAV Teams Paul Scerri, Robin Glinton, Sean Owens and Katia Sycara efficient way for a team of UAVs with Received Signal Strength Indicator (RSSI) sen- sors to locate radio locations requires integrating multiple signals from different UAVs into a Bayesian filter, hence requir

Scerri, Paul

400

Structure and magnetic properties of rf thermally plasma synthesized Mn and MnZn ferrite nanoparticles  

E-Print Network [OSTI]

Structure and magnetic properties of rf thermally plasma synthesized Mn and Mn­Zn ferrite has previously been shown to be a viable route to producing nanocrystalline magnetite and Ni ferrite nanoparticles. In this work nanocrystalline powders of Mn and Mn­Zn ferrites have been synthesized using a 50 k

McHenry, Michael E.

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network [OSTI]

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

402

Ion Crystals Produced by Laser and Sympathetic Cooling in a Linear RF Ion Trap  

E-Print Network [OSTI]

A detailed investigation of ion crystals produced by laser and sympathetic cooling in a linear RF trap has been conducted. The laser cooling methods were examined and applied to the trapped ^24Mg^(positive) ions. The crystals produced by the laser...

Zhu, Feng

2012-02-14T23:59:59.000Z

403

CMOS RF front-end design for terrestrial and mobile digital television systems  

E-Print Network [OSTI]

With the increasing demand for high quality TV service, digital television (DTV) is replacing the conventional analog television. DTV tuner is one of the most critical blocks of the DTV receiver system; it down-converts the desired DTV RF channel...

Xiao, Jianhong

2007-09-17T23:59:59.000Z

404

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

405

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

406

International Conference on Microwave and RF Heating MODELING OF A CYLINDRICAL APPLICATOR WITH THE  

E-Print Network [OSTI]

by comprehensive modeling specifying appropriate parameters of the excitation system and monitoring the electric10th International Conference on Microwave and RF Heating and experimentally. It appears that because of the uniform electric field distribution along the axis of the cylinder

Yakovlev, Vadim

407

CMOS RF down-conversion mixer design for low-power wireless communications  

E-Print Network [OSTI]

and the digital building blocks on a single chip. Indeed, both the full integration and the low-voltage design, 1 building blocks This paper aims to study the design of an integrated single-balanced mixer in CMOS 0.18 !m for the design of RF integrated circuits. Indeed, in recent years the huge efforts, provided

Paris-Sud XI, Université de

408

Comparing the performance of plasma impedance probes and Langmuir probes for RF plasma diagnostics  

E-Print Network [OSTI]

Comparing the performance of plasma impedance probes and Langmuir probes for RF plasma diagnostics probing, a less developed technique, can possibly overcome these problems. Better plasma diagnostic tools Ethan Dale, Dr. Mitchell Walker High-Power Electric Propulsion Laboratory Objective Plasma is the most

Walker, Mitchell

409

Phase loop bandwidth measurements on the advanced photon source 352 MHz rf systems  

SciTech Connect (OSTI)

Phase loop bandwidth tests were performed on the Advanced Photon Source storage ring 352-MHz rf systems. These measurements were made using the HP3563A Control Systems Analyzer, with the rf systems running at 30 kilowatts into each of the storage ring cavities, without stored beam. An electronic phase shifter was used to inject approximately 14 degrees of stimulated phase shift into the low-level rf system, which produced measureable response voltage in the feedback loops without upsetting normal rf system operation. With the PID (proportional-integral-differential) amplifier settings at the values used during accelerator operation, the measurement data revealed that the 3-dB response for the cavity sum and klystron power-phase loops is approximately 7 kHz and 45 kHz, respectively, with the cavities the primary bandwidth-limiting factor in the cavity-sum loop. Data were taken at various PID settings until the loops became unstable. Crosstalk between the two phase loops was measured.

Horan, D.; Nassiri, A.; Schwartz, C.

1997-08-01T23:59:59.000Z

410

New low-level rf system for the Fermilab Booster synchrotron  

SciTech Connect (OSTI)

This paper describes the Booster low-level rf system that was constructed to meet these recently added requirements: (1) synthesizer controlled capture frequency at injection, (2) very low-phase noise over the machine cycle, (3) smooth phase-lock of beam to an external reference frequency and (4) ability to accelerate either a full turn or partial turn of beam.

Kerns, C.; Crisp, J.; Kerns, Q.; Miller, H.

1987-03-01T23:59:59.000Z

411

Optical Investigations of Dust Particles Distribution in RF and DC Discharges  

SciTech Connect (OSTI)

Optical emission spectroscopy is used to study dust particles movement and conditions of a formation of ordered plasma-dust structures in a capacitively coupled RF discharge. 3D binocular diagnostics of plasma-dust structures in dc discharge was made.

Ramazanov, T. S.; Dosbolayev, M. K.; Jumabekov, A. N.; Amangaliyeva, R. Zh. [Al-Farabi Kazakh National University, IETP, 96a Tole Bi St., Almaty 050012 (Kazakhstan); Filatova, I. I.; Azharonok, V. V. [B. I. Stepanov Institute of Physics NAS of Belarus, Nezavisimosti Ave., 68, 220072, Minsk (Belarus)

2008-09-07T23:59:59.000Z

412

Recombination time of an RF discharge plasma in the presence of water molecules  

SciTech Connect (OSTI)

The authors show that the introduction of water vapor into an electrodeless rf discharge noticeably reduces the excitation temperature and substantially increases the recombination time of the plasma. An attempt is made to explain the physical processes associated with these phenomena.

Protasevich, E.T.

1986-05-01T23:59:59.000Z

413

Conservation Biology (Biology 45300) An Ecology Course for the Fall of 2007 with RF Rockwell  

E-Print Network [OSTI]

Conservation Biology (Biology 45300) An Ecology Course for the Fall of 2007 with RF Rockwell Biology 45300 - Conservation Biology This undergraduate course provides an introduction to conservation biology with an emphasis on the interplay of various fields of biology in the mamangement and conservation

Lombardi, John R.

414

CRYOGENIC TESTING OF THE RF INPUT WAVEGUIDE FOR THE CEBAF UPGRADE CRYOMODULE*  

E-Print Network [OSTI]

CRYOGENIC TESTING OF THE RF INPUT WAVEGUIDE FOR THE CEBAF UPGRADE CRYOMODULE* T. Hiatt , M. Breth to support the planned CEBAF upgrade at the Jefferson Lab a new cryomodule has been designed. A key component original CEBAF waveguides. A series of tests were performed on the waveguide to include temperature

415

High Power RF Tests on WR650 Pre-Stressed Planar Windows  

SciTech Connect (OSTI)

A new planar, ceramic window intended to be used with WR650 waveguide fundamental power couplers at 1300 MHz or 1500 MHz has been developed. It is based on the pre-stressed planar window concept tested in PEP II and LEDA. A test stand that made use of the 100kW CW 1500 MHz RF system in the JLAB FEL was commissioned and used to apply up to 80 kW traveling wave (TW)to the windows. Two different types of RF windows (brazed and diffusion bonded ceramics) with design specification of 50 kW CW in TW mode were successfully tested both as a gas barrier (intended to operate up to 2 psi) and as a vacuum barrier. The vacuum windows were able to maintain UHV quality vacuum and were successfully operated in the 10{sup -9} mbar range. An overview of the pre-stressed power windows, RF test stand, procedures and RF power testing results will be presented.

Stirbet, Mircea [JLAB; Davis, G. Kirk [JLAB; Elliott, Thomas S. [JLAB; King, Larry [JLAB; Powers, Thomas J. [JLAB; Rimmer, Robert A. [JLAB; Walker, Richard L. [JLAB

2009-11-01T23:59:59.000Z

416

Development of fundamental power coupler for high-current superconducting RF cavity  

SciTech Connect (OSTI)

Brookhaven National Laboratory took a project of developing a 704 MHz five-cell superconducting RF cavity for high-current linacs, including Energy Recovery Linac (ERL) for planned electron-hadron collider eRHIC. The cavity will be fed by a high-power RF amplifier using a coaxial Fundamental Power Coupler (FPC), which delivers 20 kW of CW RF power to the cavity. The design of FPC is one of the important aspects as one has to take into account the heat losses dissipated on the surface of the conductor by RF fields along with that of the static heat load. Using a simple simulation model we show the temperature profile and the heat load dissipated along the coupler length. To minimize the heat load on FPC near the cavity end, a thermal intercept is required at an appropriate location on FPC. A 10 K intercept was chosen and its location optimized with our simulation code. The requirement on the helium gas flow rate for the effective heat removal from the thermal intercept is also discussed.

Jain P.; Belomestnykh, S.; Ben-Zvi, I.; Xu, W.

2012-05-20T23:59:59.000Z

417

A multichannel, real-time MRI RF power monitor for independent SAR determination  

SciTech Connect (OSTI)

Purpose: Accurate measurements of the RF power delivered during clinical MRI are essential for safety and regulatory compliance, avoiding inappropriate restrictions on clinical MRI sequences, and for testing the MRI safety of peripheral and interventional devices at known RF exposure levels. The goal is to make independent RF power measurements to test the accuracy of scanner-reported specific absorption rate (SAR) over the extraordinary range of operating conditions routinely encountered in MRI. Methods: A six channel, high dynamic range, real-time power profiling system was designed and built for monitoring power delivery during MRI up to 440 MHz. The system was calibrated and used in two 3 T scanners to measure power applied to human subjects during MRI scans. The results were compared with the scanner-reported SAR. Results: The new power measurement system has highly linear performance over a 90 dB dynamic range and a wide range of MRI duty cycles. It has about 0.1 dB insertion loss that does not interfere with scanner operation. The measurements of whole-body SAR in volunteers showed that scanner-reported SAR was significantly overestimated by up to about 2.2 fold. Conclusions: The new power monitor system can accurately and independently measure RF power deposition over the wide range of conditions routinely encountered during MRI. Scanner-reported SAR values are not appropriate for setting exposure limits during device or pulse sequence testing.

El-Sharkawy, AbdEl-Monem M.; Qian Di; Bottomley, Paul A.; Edelstein, William A. [Russell H. Morgan Department of Radiology and Radiological Science, Johns Hopkins, University School of Medicine, Baltimore, Maryland 21287 (United States); Russell H. Morgan Department of Radiology and Radiological Science, Johns Hopkins, University School of Medicine, Baltimore, Maryland 21287 (United States) and Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21287 (United States); Russell H. Morgan Department of Radiology and Radiological Science, Johns Hopkins, University School of Medicine, Baltimore, Maryland 21287 (United States)

2012-05-15T23:59:59.000Z

418

IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 4, APRIL 2003 227 RF MEMS Switches Fabricated on  

E-Print Network [OSTI]

with superior performance over con- ventional semiconductor devices [4]­[7]. Typically, RF MEMS switches-resistivity silicon wafers, gallium arsenide (GaAs) wafers, and quartz substrates using semiconductor Manuscript and surface planarization of wide metal lines prior to deposition of a metal membrane bridge, which poses

Cetiner, Bedri A.

419

PERFORMANCE STATUS OF THE RF-GUN BASED INJECTOR OF THE TESLA TEST FACILITY LINAC  

E-Print Network [OSTI]

PERFORMANCE STATUS OF THE RF-GUN BASED INJECTOR OF THE TESLA TEST FACILITY LINAC S. SchreiberÂŁ for the TESLA Collaboration, DESY, 22603 Hamburg, Germany Abstract The TESLA Test Facility Linac (TTFL) at DESY uses two modules with 8 TESLA superconducting accelerat- ing structures each to accelerate an electron

420

FIRST EXPERIMENTS WITH THE RF GUN BASED INJECTOR FOR THE TESLA TEST FACILITY LINAC  

E-Print Network [OSTI]

FIRST EXPERIMENTS WITH THE RF GUN BASED INJECTOR FOR THE TESLA TEST FACILITY LINAC S. Schreiber for the TESLA Collaboration, DESY, 22603 Hamburg, Germany Abstract During 1997 and 1998 a first accelerator module was tested successfully at the TESLA Test Facility Linac (TTFL) at DESY. Eight superconducting

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Aluminum nitride for heatspreading in RF IC's L. La Spina a,*, E. Iborra b  

E-Print Network [OSTI]

phenomena Heatspreader Piezoelectric characteristics RF integration Thermal instabilities Thermal resistance that display a reduc- tion of more than 70% in the value of the thermal resistance. Ă? 2008 Elsevier Ltd. All lead to a very high thermal resistance. This has been demonstrated in our in-house silicon-on- glass

Technische Universiteit Delft

422

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN SL/98-060 (RF)  

E-Print Network [OSTI]

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN SL/98-060 (RF) A Recirculating Electron Accelerator will become available after the decommissioning of LEP. The major design features and subjects of further developments are discussed. Geneva, Switzerland October 9, 1998 #12;1 INTRODUCTION The European nuclear physics

Keil, Eberhard

423

ACP-OPLL Photonic Integrated Circuits for High Dynamic Range RF/Photonic links  

E-Print Network [OSTI]

the local optical phase modulators Laser source RF input ACP-OPLL Phase modulator PD PD Output PhaseB optical coupler and a feedback trace from the photodetector common electrode to the phase modulator common electrode. Through phase tracking the OPLL forces the optical phase of the local ACP phase modulator

Coldren, Larry A.

424

Experimental Studies of RF Interference and Upset in Devices and Gates  

E-Print Network [OSTI]

Xingzhi Wen #12;Goals · Start with the study of the effects on the fundamental units of IC circuits, ie and protecting elements. · Develop on-chip sensing, registration, and protection circuitry. #12;Effects. · Effective protection and RF hardened design will be developed #12;RFI Effect on Diode I-V Characteristics

Anlage, Steven

425

WTJ(S^rf7?\\ Ris-R-761p*  

E-Print Network [OSTI]

WTJ(S^rf7?\\ Risø-R-761£p*Thermonuclear Fusion September 1994 #12;ANNUAL PROGRESS _****ig*r REPORT 1993 Work in Controlled Thermonuclear Fusion Research Research Performed in The Fusion Research Unit underthe Contract ofAssociationbetween Euratom and Risø

426

RF Distribution System for High Power Test of the SNS Cryomodule  

SciTech Connect (OSTI)

A four-way waveguide RF power distribution system for testing the Spallation Neutron Source (SNS) multi-cavity cryomodule to investigate the collective behavior has been developed. A single klystron operating at 805MHz for 1.3 msec at 60Hz powers the 4-way waveguide splitter to deliver up to 400 kW to individual cavities. Each cavity is fed through a combination of waveguide splitters and vector modulators (VM) to provide independent magnitude and phase controls. The waveguide vector modulator consists of two quadrature hybrids and two motorized waveguide phase shifters. The phase shifters and the assembled waveguide vector modulators were individually tested and characterized for low power and high RF power in the SNS RF test facility. Precise calibrations of magnitude and phase were performed to generate the look up tables (LUTs) to provide operational references during the cryomodule test. An I-Q demodulator module was developed and utilized to measure relative phases in pulsed high RF power operation. PLC units were developed for mechanical control of the phase shifters. Initial low/high power measurements were made using LabVIEW. An operation algorithm has been implemented into EPICS control for the cryomodule test stand.

Lee, Sung-Woo [ORNL] [ORNL; Kang, Yoon W [ORNL] [ORNL; Broyles, Michael R [ORNL] [ORNL; Crofford, Mark T [ORNL] [ORNL; Geng, Xiaosong [ORNL] [ORNL; Kim, Sang-Ho [ORNL] [ORNL; Phibbs, Curtis L [ORNL] [ORNL; Strong, William Herb [ORNL] [ORNL; Peglow, Robert C [ORNL] [ORNL; Vassioutchenko, Alexandre V [ORNL] [ORNL

2012-01-01T23:59:59.000Z

427

Heterogeneous PLC-RF networking for LLNs Cdric Chauvenet*,** --Bernard Tourancheau*  

E-Print Network [OSTI]

Heterogeneous PLC-RF networking for LLNs CĂ©dric Chauvenet*,** -- Bernard Tourancheau* * CITI INSA and city automation, our view of the future building networking infrastructure places PLC as the central point. Thanks to the design of converging IPv6 networking layers, we show that merging PLC with existing

Paris-Sud XI, Université de

428

Devitrification kinetics and phase selection mechanisms in Cu-Zr metallic glasses  

SciTech Connect (OSTI)

Metallic glasses have been a promising class of materials since their discovery in the 1960s. Indeed, remarkable chemical, mechanical and physical properties have attracted considerable attention, and several excellent reviews are available. Moreover, the special group of glass forming alloys known as the bulk metallic glasses (BMG) become amorphous solids even at relatively low cooling rates, allowing them to be cast in large cross sections, opening the scope of potential applications to include bulk forms and net shape structural applications. Recent studies have been reported for new bulk metallic glasses produced with lower cooling rates, from 0.1 to several hundred K/s. Some of the application products of BMGs include sporting goods, high performance springs and medical devices. Several rapid solidification techniques, including melt-spinning, atomization and surface melting have been developed to produce amorphous alloys. The aim of all these methods is to solidify the liquid phase rapidly enough to suppress the nucleation and growth of crystalline phases. Furthermore, the production of amorphous/crystalline composite (ACC) materials by partial crystallization of amorphous precursor has recently given rise to materials that provide better mechanical and magnetic properties than the monolithic amorphous or crystalline alloys. In addition, these advances illustrate the broad untapped potential of using the glassy state as an intermediate stage in the processing of new materials and nanostructures. These advances underlie the necessity of investigations on prediction and control of phase stability and microstructural dynamics during both solidification and devitrification processes. This research presented in this dissertation is mainly focused on Cu-Zr and Cu-Zr-Al alloy systems. The Cu-Zr binary system has high glass forming ability in a wide compositional range (35-70 at.% Cu). Thereby, Cu-Zr based alloys have attracted much attention according to fundamental research on the behaviors of glass forming alloys. Further motivation arising from the application of this system as a basis for many BMGs and ACC materials; the Cu-Zr system warrants this attention and offers great potential for the development of new materials. However, the prediction and control of microstructural evolution during devitrification remains challenging because of the complex devitrification behavior of the Cu-Zr binary alloy which is arising from the competition of metastable and stable phases and diversity of crystal structures. This dissertation details a systematic fundamental investigation into the mechanisms and kinetics of the various crystallization transformation processes involved in the overall devitrification response of Cu-Zr and Cu-Zr-Al glasses. Various isothermal and nonisothermal treatments are employed, and the structural response is characterized using bulk X-ray and thermal analysis methods as well as nanoscale microscopic analysis methods, revealing structural and chemical details down to the atomic-scale. By carefully combining techniques such as differential scanning calorimetry (DSC), in-situ synchrotron high energy X-ray diffraction (HEXRD), and transmission electron microscopy (TEM) to quantify the characterization transformations, this research has uncovered numerous details concerning the atomistic mechanisms of crystallization and has provided much new understanding related to the dominant phases, the overall reaction sequences, and the rate-controlling mechanisms. As such this work represents a substantial step forward in understanding these transformations and provides a clear framework for further progress toward ultimate application of controlled devitrification processing for the production of new materials with remarkable properties.

Kalay, Ilkay

2010-12-15T23:59:59.000Z

429

DENSITY-FUNCTIONAL STUDY OF U-Mo AND U-Zr ALLOYS  

SciTech Connect (OSTI)

Density-functional theory previously used to describe phase equilibria in U-Zr alloys [A. Landa, P. Soederlind, P.E.A. Turchi, J. Alloys Comp. 478 (2009) 103-110] is extended to investigate the ground-state properties of U-Mo solid solutions. We discuss how the heat of formation in both alloys correlates with the charge transfer between the alloy components, and how the specific behavior of the density of states in the vicinity of the Fermi level promotes the stabilization of the U{sub 2}Mo compound. Our calculations prove that, due to the existence of a single {gamma}-phase over the typical fuel operation temperatures, {gamma}-U-Mo alloys should indeed have much lower constituent redistribution than {gamma}-U-Zr alloys for which binodal decomposition causes a high degree of constituent redistribution.

Landa, A; Soderlind, P; Turchi, P A

2010-11-01T23:59:59.000Z

430

Permeability of CoNbZr amorphous thin films over a wide frequency range  

SciTech Connect (OSTI)

CoNbZr amorphous films have attracted the attention of many researchers because of their high saturation magnetization, high permeability, low coercivity, and nearly zero magnetostriction. For these films to be used, one of the important magnetic properties is the behavior of the permeability over a wide frequency range. We have measured the permeability of a square-shaped magnetic film (13 mm x 55 mm) sputtered on a glass substrate from 1 MHz to 400 MHz using a stripline. Over 400 MHz, the permeability of the magnetic film was measured using a ring-shaped sample mounted in a coaxial fixture. The wall motion permeability of CoNbZr amorphous films decreases from 1 kHz to nearly zero at 1 MHz. The rotation permeability is constant to 100 MHz and ferromagnetic resonance is observed near 1 GHz.

Koyama, H.; Tsujimoto, H.; Shirae, K.

1987-09-01T23:59:59.000Z

431

Influence of multiphonon excitations and transfer on the fusion of Ca+Zr  

E-Print Network [OSTI]

Fusion data for $^{48}$Ca+$^{90,96}$Zr are analyzed by coupled-channels calculations that are based on the M3Y+repulsion, double-folding potential. By applying a previously determined nuclear density of $^{48}$Ca, the neutron densities of the zirconium isotopes are adjusted to optimize the fit to the fusion data, whereas the proton densities are determined by electron scattering experiments. It is shown that the fusion data can be explained fairly well by including couplings to one- and two-phonon excitations of the reacting nuclei and to one- and two-nucleon transfer reactions but there is also some sensitivity to multiphonon excitations. The neutron skin thicknesses extracted for the two zirconium isotopes are consistent with anti-proton measurements. The densities of the zirconium isotopes are used together with the previously determined nuclear density of $^{40}$Ca to calculate the M3Y+repulsion potentials and predict the fusion cross sections of $^{40}$Ca+$^{90,96}$Zr. The predicted cross sections for $^{40}$Ca+$^{90}$Zr are in reasonable agreement with the data when the influence of multiphonon excitations and a modest transfer is considered. The prediction of the $^{40}$Ca+$^{96}$Zr fusion cross section, on the other hand, is poor and under-predicts the data by 30 to 40%. Although couplings to transfer channels with positive $Q$ values were expected to play an important role, they are not able to explain the data, primarily because the predicted Coulomb barrier is about 1.5 MeV too high. Possible reasons for this failure are discussed.

H. Esbensen; A. M. Stefanini

2014-04-16T23:59:59.000Z

432

Transient phenomena in the dielectric breakdown of HfO{sub 2} optical films probed by ultrafast laser pulse pairs  

SciTech Connect (OSTI)

The laser induced breakdown threshold of HfO{sub 2} films is studied with single pairs of pulses of variable delay and 50 fs and 1 ps pulse duration. Two distinct transient regimes are observed that can be related to the relaxation of the electron density from the conduction band via an intermediate state to the valence band. The experimental results are in good agreement with a theoretical model that assumes occupation of mid gap states after the first pulse on a time scale of several tens of picoseconds and subsequent decay of this population via recombination with holes in the valence band on a time scale of several tens of milliseconds.

Nguyen, Duy N.; Emmert, Luke A.; Rudolph, Wolfgang [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Patel, Dinesh; Menoni, Carmen S. [Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States)

2010-11-08T23:59:59.000Z

433

Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films  

SciTech Connect (OSTI)

We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

2011-09-12T23:59:59.000Z

434

Room temperature strain rate sensitivity in precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposites  

SciTech Connect (OSTI)

Investigation on the room temperature strain rate sensitivity using depth sensing nanoindentation is carried out on precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposite sintered using pulsed electric current sintering. Using constant load method the strain rate sensitivity values are estimated. Lower strain rate sensitivity of ? 3.7 × 10{sup ?3} is observed and the limited strain rate sensitivity of these ceramic nanocomposites is explained in terms of cluster model. It is concluded that presence of amorphous Si-C-N(O) clusters are responsible for the limited flowability in these ceramics.

Sujith, Ravindran; Kumar, Ravi, E-mail: nvrk@iitm.ac.in [Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)] [Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)

2014-01-15T23:59:59.000Z

435

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}  

SciTech Connect (OSTI)

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

2012-12-01T23:59:59.000Z

436

Investigations of the g{sub K}-factors in the {sup 175,177,179}Hf Isotopes  

SciTech Connect (OSTI)

In this paper the intrinsic g{sub K} and effective spin g{sub s} factors of the odd-mass {sup 175-179}Hf isotopes have been investigated within the Tamm-Dancoff approximation by using the realistic Saxon-Woods potential. The theoretically calculated g{sub K} and g{sub s}{sup eff} values are compared with experimental data. The comparison of the measured and calculated values of the effective g{sub s} factor shows that the spin polarization explains quite well the observed reduction of g{sub s} from its free-nucleon value.

Yakut, Hakan; Kuliev, Ali [Sakarya University, Department of physics, Sakarya (Turkey); Guliyev, Ekber [National Academy of Sciences, Institute of Physics, Baku (Azerbaijan)

2008-11-11T23:59:59.000Z

437

Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

438

Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics  

SciTech Connect (OSTI)

In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO{sub 2}/Si (S), Al/HfO{sub 2}/SiO{sub 2}/Si (H), and Al/3HfO{sub 2}/SiO{sub 2}/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO{sub 2} dielectric layer, which leads to larger numbers of carriers crowded through the sweep of V{sub G} before the domination of tunneling current. Additionally, the HfO{sub 2} dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e{sup ?}-h{sup +}) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO{sub 2} stacking layers are importance to MOS(p) tunneling photo diodes.

Pang, Chin-Sheng; Hwu, Jenn-Gwo, E-mail: jghwu@ntu.edu.tw [Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)] [Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

2014-04-15T23:59:59.000Z

439

Searches for HCl and HF in comets 103P/Hartley 2 and C/2009 P1 (Garradd) with the Herschel space observatory  

E-Print Network [OSTI]

HCl and HF are expected to be the main reservoirs of fluorine and chlorine wherever hydrogen is predominantly molecular. They are found to be strongly depleted in dense molecular clouds, suggesting freeze-out onto grains in such cold environments. We can then expect that HCl and HF were also the major carriers of Cl and F in the gas and icy phases of the outer solar nebula, and were incorporated into comets. We aimed to measure the HCl and HF abundances in cometary ices as they can provide insights on the halogen chemistry in the early solar nebula. We searched for the J(1-0) lines of HCl and HF at 626 and 1232 GHz, respectively, using the HIFI instrument on board the Herschel Space Observatory. HCl was searched for in comets 103P/Hartley 2 and C/2009 P1 (Garradd), whereas observations of HF were conducted in comet C/2009 P1. In addition, observations of H$_2$O and H$_2^{18}$O lines were performed in C/2009 P1 to measure the H$_2$O production rate. Three lines of CH$_3$OH were serendipitously observed in the ...

Bockelée-Morvan, D; Crovisier, J; Lis, D C; Hartogh, P; Moreno, R; de Val-Borro, M; Blake, G A; Szutowicz, S; Boissier, J; Cernicharo, J; Charnley, S B; Combi, M; Cordiner, M A; de Graauw, T; Encrenaz, P; Kidger, M; Küppers, M; Milam, S N; Müller, H S P; Phillips, T G; Rengel, M

2014-01-01T23:59:59.000Z

440

Theoretical Predictions and Experimental Assessments of the Performance of Alumina RF Windows  

SciTech Connect (OSTI)

Radio frequency (RF) windows are the most likely place for catastrophic failure to occur in input power couplers for particle accelerators. Reliable RF windows are essential for the success of the Accelerator Production of Tritium (APT) program because there are over 1000 windows on the accelerator, and it takes more than one day to recover from a window failure. The goals of this research are to analytically predict the lifetime of the windows, to develop a conditioning procedure, and to evaluate the performance of the RF windows. The analytical goal is to predict the lifetime of the windows. The probability of failure is predicted by the combination of a finite element model of the window, Weibull probabilistic analysis, and fracture mechanics. The window assembly is modeled in a finite element electromagnetic code in order to calculate the electric fields in the window. The geometry (i.e. mesh) and electric fields are input into a translator program to generate the mesh and boundary conditions for a finite element thermal structural code. The temperatures and stresses are determined in the thermal/structural code. The geometry and thermal structural results are input into another translator program to generate an input file for the reliability code. Material, geometry and service data are also input into the reliability code. To obtain accurate Weibull and fatigue data for the analytical model, four point bend tests were done. The analytical model is validated by comparing the measurements to the calculations. The lifetime of the windows is then determined using the reliability code. The analytical model shows the window has a good thermal mechanical design and that fast fracture is unlikely to occur below a power level of 9 Mw. The experimental goal is to develop a conditioning procedure and evaluate the performance of RF windows. During the experimental evaluation, much was learned about processing of the windows to improve the RF performance. Methods of processing included grit blasting and using various coatings.

Karen Ann Cummings

1998-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "zr hf rf" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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441

A Novel Zr-1Nb Alloy and a New Look at Hydriding  

SciTech Connect (OSTI)

A novel Zr-1Nb has begun development based on a working model that takes into account the hydrogen permeabilities for zirconium and niobium metals. The beta-Nb secondary phase particles (SPPs) in Zr-1Nb are believed to promote more rapid hydrogen dynamics in the alloy in comparison to other zirconium alloys. Furthermore, some hydrogen release is expected at the lower temperatures corresponding to outages when the partial pressure of H2 in the coolant is less. These characteristics lessen the negative synergism between corrosion and hydriding that is otherwise observed in cladding alloys without niobium. In accord with the working model, development of nanoscale precursors was initiated to enhance the performance of existing Zr-1Nb alloys. Their characteristics and properties can be compared to oxide-dispersion strengthened alloys, and material additions have been proposed to zirconium-based LWR cladding to guard further against hydriding and to fix the size of the SPPs for microstructure stability enhancements. A preparative route is being investigated that does not require mechanical alloying, and 10 nanometer molybdenum particles have been prepared which are part of the nanoscale precursors. If successful, the approach has implications for long term dry storage of used fuel and for new routes to nanoferritic and ODS alloys.

Robert D. Mariani; James I. Cole; Assel Aitkaliyeva

2013-09-01T23:59:59.000Z

442

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

443

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO{sub 2} capacitors treated by N{sub 2}-plasma  

SciTech Connect (OSTI)

The nitrogen incorporation into the HfO{sub 2} films with an EOT (equivalent oxide thickness) of 9 A was performed by N{sub 2}-plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N{sub 2}-plasma treatment at 300 deg. C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 deg. C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the HfO{sub 2} films possesses the intrinsic effect that drastically reduce the electron leakage current through HfO{sub 2} dielectrics by deactivating the V{sub O} (oxygen vacancy) related gap states.

Seong, Nak-Jin; Yoon, Soon-Gil; Yeom, Seung-Jin; Woo, Hyun-Kyung; Kil, Deok-Sin; Roh, Jae-Sung; Sohn, Hyun-Chul [Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejon (Korea, Republic of); Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Icheon-si Kyoungki-do, 467-701 (Korea, Republic of)

2005-09-26T23:59:59.000Z

444

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

445

Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers  

SciTech Connect (OSTI)

Energy band alignment of ZnO/Si heterojunction with thin interlayers Al{sub 2}O{sub 3} and HfO{sub 2} grown by atomic layer deposition has been studied using x-ray photoelectron spectroscopy. The valence band offsets of ZnO/Al{sub 2}O{sub 3} and ZnO/HfO{sub 2} heterojunctions have been determined to be 0.43 and 0.22?eV, respectively. Accordingly, the band alignment ZnO/Si heterojunction is then modified to be 0.34 and 0.50?eV through inserting a thin Al{sub 2}O{sub 3} and HfO{sub 2} layer, respectively. The feasibility to tune the band structure of ZnO/Si heterojunction by selecting a proper interlayer shows great advantage in improving the performance of the ZnO-based optoelectronic devices.

Lu, Hong-Liang, E-mail: honglianglu@fudan.edu.cn; Yang, Ming; Xie, Zhang-Yi; Geng, Yang; Zhang, Yuan; Wang, Peng-Fei; Sun, Qing-Qing; Ding, Shi-Jin; Wei Zhang, David [State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433 (China)

2014-04-21T23:59:59.000Z

446

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} gate dielectrics  

SciTech Connect (OSTI)

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfO{sub x}N{sub y}/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfO{sub x}N{sub y} film a promising candidate for high-k gate dielectrics.

He, G.; Zhang, L. D.; Liu, M.; Zhang, J. P.; Wang, X. J. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhen, C. M. [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050016 (China)

2009-01-01T23:59:59.000Z

447

Influence of trimethylaluminum on the growth and properties of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces  

SciTech Connect (OSTI)

The growth and the electrical properties of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO{sub 2} from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO{sub 2} growth for (2x4) but not for the group-III-rich (4x2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.

Hwang, Yoontae; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Engel-Herbert, Roman [Department of Materials Science and Engineering, Pennsylvania State University, University Park Pennsylvania 16802 (United States)

2011-01-31T23:59:59.000Z

448

The effect of nanocrystallite size in monoclinic HfO{sub 2} films on lattice expansion and near-edge optical absorption  

SciTech Connect (OSTI)

Nanocrystalline monoclinic HfO{sub 2} films were sputter deposited on fused silica substrates, air annealed at 573 to 1273 K to affect crystallite growth, and analyzed by x-ray diffraction and spectrophotometry. Lattice expansion occurs with diminishing crystallite size. O 2p->Hf 5d interband absorption dominates the optical edge at energy E>=6.24 eV, with an optical band gap, E{sub o}=5.48+-0.023, which is independent of crystallite size. However, the strength of a localized resonant band, with onset at 5.65 eV and maximum at 5.94 eV, is affected by crystallite size. Its polaronic origin in a perfect HfO{sub 2} lattice is discussed.

Cisneros-Morales, M. C.; Aita, C. R. [Department of Chemistry and Biochemistry and the Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2010-05-10T23:59:59.000Z

449

In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate  

SciTech Connect (OSTI)

High quality HfO{sub 2} dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO{sub 2}/graphene/4H-SiC heterojunctions have good thermal stability up to 650 deg. C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO{sub 2} and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.

Chen, Q.; Huang, H.; Chen, W.; Wee, A. T. S.; Feng, Y. P. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J. [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

2010-02-15T23:59:59.000Z

450

Fluorohydrogenate Cluster Ions in the Gas Phase: Electrospray Ionization Mass Spectrometry of the [1-Ethyl-3-methylimidazolium+][F(HF)2.3–] Ionic Liquid  

SciTech Connect (OSTI)

Electrospray ionization of the fluorohydrogenate ionic liquid [1-ethyl-3-methylimidazolium][F(HF)2.3] ionic liquid was conducted to understand the nature of the anionic species as they exist in the gas phase. Abundant fluorohydrogenate clusters were produced; however, the dominant anion in the clusters was [FHF-], and not the fluoride-bound HF dimers or trimers that are seen in solution. Density functional theory (DFT) calculations suggest that HF molecules are bound to the clusters by about 30 kcal/mol. The DFT-calculated structures of the [FHF-]-bearing clusters show that the favored interactions of the anions are with the methynic and acetylenic hydrogen atoms on the imidazolium cation, forming planar structures similar to those observed in the solid state. A second series of abundant negative ions was also formed that contained [SiF5-] together with the imidazolium cation and the fluorohydrogenate anions that originate from reaction of the spray solution with silicate surfaces.

Gary S. Groenewold; James E. Delmore; Michael T. Benson; Tetsuya Tsuda; Rika Hagiwara

2013-12-01T23:59:59.000Z

451

An rf-carpet electrospray ion source to provide isobaric mass calibrants for trans-uranium elements  

E-Print Network [OSTI]

For trans-uranium elements, stable atomic isobars do not exist. In order to provide isobaric reference ions for the mass measurement of trans-uranium elements, an electrospray ion source (ESI) was combined with an rf-carpet to collect molecular ions efficiently. The rf-carpet allows for simplification of the pumping system to transport ions from the ESI to a precision mass analyzer. Molecular ions appropriate for isobaric references of trans-uranium elements were extracted from the rf-carpet and analyzed by a multi-reflection time-of-flight mass spectrograph (MRTOF-MS) with a resolving power of $\\rm{R_m} \\gtrsim100,000$.

S. Naimi; S. Nakamura; Y. Ito; H. Mita; K. Okada; A. Ozawa; P. Schury; T. Sonoda; A. Takamine; M. Wada; H. Wollnik

2012-12-16T23:59:59.000Z

452

RE/ZrO{sub 2} (RE = Sm, Eu) composite oxide nano-materials: Synthesis and applications in photocatalysis  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • RE/ZrO{sub 2} (RE = Sm, Eu) nano-materials have been successfully synthesized. • Defect and electron structures determine the absorption properties on visible light. • Nano-sized Zr{sub 0.8}Sm{sub 0.2}O{sub 2??} has good visible-light-responsive photocatalytic activities. • In the future, it can be used in wastewater treatment and environmental protection. - Abstract: Zirconia modified by Samarium/Europium, RE/ZrO{sub 2} (RE = Sm, Eu), composite oxide nano-materials have been successfully synthesized by improved sol–gel method. Characterization results show that X-ray diffraction (XRD) peaks of products gradually shift to the lower angle with the increase of rare earth which implies that the lattice distances of RE/ZrO{sub 2} nano-materials are gradually enlarged. Moreover, the molar ratios between zirconium and rare earth are consistent with the chemical formula and both of them are uniformly distributed in samples. Optical properties indicate that defect structures and electron configurations of RE/ZrO{sub 2} (RE = Sm, Eu) with single phase determine their absorption properties on visible light. Photocatalytic experiments indicate Zr{sub 0.8}Sm{sub 0.2}O{sub 2??} nano-crystals have excellent visible-light-responsive photocatalytic activities on Methylene blue and Rhodamine B which results from the special defect structure, suitable electronic configuration, and larger specific surface area. It follows that Zr{sub 0.8}Sm{sub 0.2}O{sub 2??} nano-crystals are new visible-light-responsive photocatalysts which can be applied in dye wastewater treatment and environmental protection in the future.

Du, Weimin, E-mail: duweimin75@gmail.com [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455002 (China); Zhu, Zhaoqiang [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455002 (China); College of Chemistry and Molecular Engineering, Zhengzhou University, Zhengzhou, Henan 450001 (China); Zhang, Xiaofen; Wang, Dacheng; Liu, Donghe [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455002 (China); Qian, Xuefeng [School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240 (China); Du, Jimin, E-mail: djm@aynu.edu.cn [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455002 (China)

2013-10-15T23:59:59.000Z

453

Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth  

SciTech Connect (OSTI)

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Ĺ and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Ĺ at a substrate temperature of 800 °C and 6 Ĺ at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ?6 Ĺ that coalesce into continuous layers for 8 and 15 Ĺ thickness at 800 °C, and for 6 Ĺ at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Ĺ thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.

Fallqvist, A.; Fager, H.; Hultman, L.; Persson, P. O. Ĺ. [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)] [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Ghafoor, N. [Nanostructured Materials, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)] [Nanostructured Materials, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2013-12-14T23:59:59.000Z

454

Synthesis and crystal structure of CuZrTiO{sub 5}-A new crystal structure type  

SciTech Connect (OSTI)

A new compound, CuZrTiO{sub 5}, was synthesized as strongly pleochroic green crystals from the oxides between 995 and 1010 deg. C, 1 atm. Its crystal structure was determined by single crystal XRD, resulting in R (F{sup 2}>2sigma(F{sup 2}))=0.032 and wR (all data)=0.079). CuZrTiO{sub 5} is orthorhombic, space group P2{sub 1}2{sub 1}2{sub 1}, a=3.5871(3) A, b=6.6968(4) A, c=14.6679(9) A, V=352.35(4) A{sup 3}, Z=4. The structure is topologically similar to In{sub 2}TiO{sub 5} but differs in space group and cation coordination. CuZrTiO{sub 5} has relatively regular TiO{sub 6} polyhedra, but coordination is 7+1 for Zr, and 4+2 for Cu due to the Jahn-Teller effect. Ordering of the long Cu-O bonds causes reduction in symmetry relative to In{sub 2}TiO{sub 5}. Layers of Cu alternate with Ti+Zr on (001), giving rise to a distinct cleavage. Bond valence sums on Ti and Zr are far from ideal, which appears due to the limited ability of this structural topology to avoid close next-nearest neighbour distances. - Graphical abstract: The new compound CuZrTiO{sub 5} is orthorhombic (P2{sub 1}2{sub 1}2{sub 1}), with a=3.5871(3) A, b=6.6968(4) A, c=14.6679(9) A. The structure, determined with single crystal XRD, represents a new crystal structure type that is a slight distortion of that of In{sub 2}TiO{sub 5} but differs in space group and cation coordination.

Troitzsch, Ulrike [Research School of Earth Sciences, Australian National University, Canberra ACT 0200 (Australia); Christy, Andrew G., E-mail: Andrew.Christy@anu.edu.a [Research School of Earth Sciences, Australian National University, Canberra ACT 0200 (Australia); Willis, Anthony C. [Research School of Chemistry, Australian National University, Canberra ACT 0200 (Australia); Ellis, David J. [Research School of Earth Sciences, Australian National University, Canberra ACT 0200 (Australia)

2010-03-15T23:59:59.000Z

455

Local structure around Er{sup 3+} in SiO{sub 2}-HfO{sub 2} glassy waveguides using EXAFS  

SciTech Connect (OSTI)

Er{sup 3+}-doped SiO{sub 2}-HfO{sub 2} glassy waveguides with HfO{sub 2} concentrations ranging from 10 to 50 mol % were prepared using the sol-gel route and deposited on v-SiO{sub 2} substrates using the dip-coating technique. The local environment around Er{sup 3+} ions was determined from Er L{sub 3}-edge extended x-ray-absorption fine-structure (EXAFS) measurements. The first coordination shell around Er{sup 3+} ions is composed of oxygen atoms. Hafnium is the main constituent of the second coordination shell of Er{sup 3+}, differing from the cases of pure SiO{sub 2} and SiO{sub 2}-TiO{sub 2} glassy hosts, in which silicon is the main atomic species. The local structure around Er{sup 3+} ions has been found to be independent on HfO{sub 2} concentration within the studied composition range. This fact implies that Er{sup 3+} ions are preferentially dispersed in HfO{sub 2}-rich regions of the glassy waveguide, even at the lowest HfO{sub 2} concentration. For all samples, no Er{sup 3+}-Er{sup 3+} coordination shell has been detected by EXAFS. The presented structural results allow us to understand some spectroscopic properties typical of Er{sup 3+}-doped SiO{sub 2} glassy waveguides co-doped with HfO{sub 2}.

Afify, N. D.; Dalba, G.; Armellini, C.; Ferrari, M.; Rocca, F.; Kuzmin, A. [Dipartimento di Fisica, Universita degli Studi di Trento, Via Sommarive 14, I-38100 Povo (Trento) (Italy); IFN-CNR, Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Sezione FBK-CeFSA di Trento, Via alla Cascata 56/C, I-38100 Povo (Trento) (Italy); Institute of Solid State Physics, University of Latvia, LV-1063 RIGA (Latvia)

2007-07-01T23:59:59.000Z

456

Diffusion-governed-asymmetric growth of amorphous layer under solid-state reaction in Ni-Zr multilayers  

SciTech Connect (OSTI)

A molecular-dynamics simulation with an n-body potential was performed to study solid-state amorphization in the Ni-Zr system upon annealing at medium temperatures ranging from 300 to 600 C. The models for simulation were a Zr-Ni-Zr sandwich consisting of both hcp Zr and fcc Ni (001) atomic planes and a bilayer with a thin preset disordered interfacial layer, respectively, for revealing the detailed amorphization process and the growing kinetics of an amorphous layer upon solid-state reaction. The simulation results demonstrated, for the first time, that the atomic process proceeded through first diffusion, then alloying and eventually amorphization. In other words, amorphization was controlled by a diffusion-limited reaction and the growth kinetics of the amorphous layer followed exactly a t{sup 1/2} law. Another interesting finding was that the growing speeds of the amorphous layer exhibited an asymmetric behavior, i.e, the amorphous layer extended faster towards Ni lattice than that directed to Zr side. Besides, it was also found that an initiation of amorphization upon annealing was dependent to the interfacial textures, i.e., amorphization could take place when the interfaces were composed of the more open atomic planes, whereas it was suppressed if the interfaces were constructed with the close-packed planes of both lattices.

Liu, B.X.; Lai, W.S. [Tsinghua Univ., Beijing (China). Dept. of Materials Science and Engineering

1998-12-31T23:59:59.000Z

457

Tests of an RF Dipole Crabbing Cavity for an Electron-Ion Collider  

SciTech Connect (OSTI)

On the scheme of developing a medium energy electron-ion collider (MEIC) at Jefferson Lab, we have designed a compact superconducting rf dipole cavity at 750 MHz to crab both electron and ion bunches and increase luminosities at the interaction points (IP) of the machine. Following the design optimization and characterization of the electromagnetic properties such as peak surface fields and shunt impedance, along with field nonuniformities, multipole components content, higher order modes (HOM) and multipacting, a prototype cavity was built by Niowave Inc. The 750 MHz prototype crab cavity has been tested at 4 K and is ready for re-testing at 4 K and 2 K at Jefferson Lab. In this paper we present the detailed results of the rf tests performed on the 750 MHz crab cavity prototype.

Castilla Loeza, Alejandro [ODU, JLAB; Delayen, Jean R. [ODU, JLAB

2013-12-01T23:59:59.000Z

458

Elimination of Radio-Frequency Noise by Identifying and Diverting Large RF Ground Currents  

SciTech Connect (OSTI)

The problem of electromagnetic interference in scientific instruments is compounded for high-power plasma experiments by the large currents and voltages as well as by the broad bandwidths of the instruments. Ground loops are known to allow stray magnetic fields to drive large ground currents that can induce spurious signals and damage electronics. Furthermore, even when a ground loop is broken, capacitive coupling can still permit the flow of radio-frequency current, resulting in high-frequency spurious signals that can overwhelm the desired signal. We present the effects of RF ground loops on the output of vacuum photodiodes used in the Caltech Solar Loop Experiment and demonstrate the elimination of the spurious signals by diverting the ground currents away from the most vulnerable point of the signal line. Techniques for identifying the RF ground loops are also discussed. These techniques should be valuable in many high-power systems where interference from spurious coupling is an issue.

Perkins, R. J.; Bellan, P. M. [Applied Physics, California Institute of Technology (United States)

2011-12-23T23:59:59.000Z

459

Capture cavity cryomodule for quantum beam experiment at KEK superconducting RF test facility  

SciTech Connect (OSTI)

A capture cavity cryomodule was fabricated and used in a beam line for quantum beam experiments at the Superconducting RF Test Facility (STF) of the High Energy Accelerator Research Organization in Japan. The cryomodule is about 4 m long and contains two nine-cell cavities. The cross section is almost the same as that of the STF cryomodules that were fabricated to develop superconducting RF cavities for the International Linear Collider. An attempt was made to reduce the large deflection of the helium gas return pipe (GRP) that was observed in the STF cryomodules during cool-down and warm-up. This paper briefly describes the structure and cryogenic performance of the captures cavity cryomodule, and also reports the measured displacement of the GRP and the cavity-containing helium vessels during regular operation.

Tsuchiya, K.; Hara, K.; Hayano, H.; Kako, E.; Kojima, Y.; Kondo, Y.; Nakai, H.; Noguchi, S.; Ohuchi, N.; Terashima, A. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Horikoshi, A.; Semba, T. [Hitachi, Ltd., Hitachi Works, Hitachi, Ibaraki 317-8511 (Japan)

2014-01-29T23:59:59.000Z

460

Options for an 11 GeV RF Beam Separator for the Jefferson Lab CEBAF Upgrade  

SciTech Connect (OSTI)

The CEBAF accelerator at Jefferson Lab has had, since first demonstration in 1996, the ability to deliver a 5-pass electron beam to experimental halls (A, B, and C) simultaneously. This capability was provided by a set of three, room temperature 499 MHz rf separators in the 5th pass beamline. The separator was two-rod, TEM mode type resonator, which has a high shunt impedance. The maximum rf power to deflect the 6 GeV beams was about 3.4kW. The 12 GeV baseline design does not preserve the capability of separating the 5th pass, 11 GeV beam for the 3 existing halls. Several options for restoring this capability, including extension of the present room temperature system or a new superconducting design in combination with magnetic systems, are under investigation and are presented.

Jean Delayen, Michael Spata, Haipeng Wang

2009-05-01T23:59:59.000Z

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461

A new approach to calculate the transport matrix in RF cavities  

SciTech Connect (OSTI)

A realistic approach to calculate the transport matrix in RF cavities is developed. It is based on joint solution of equations of longitudinal and transverse motion of a charged particle in an electromagnetic field of the linac. This field is a given by distribution (measured or calculated) of the component of the longitudinal electric field on the axis of the linac. New approach is compared with other matrix methods to solve the same problem. The comparison with code ASTRA has been carried out. Complete agreement for tracking results for a TESLA-type cavity is achieved. A corresponding algorithm will be implemented into the MARS15 code. A realistic approach to calculate the transport matrix in RF cavities is developed. Complete agreement for tracking results with existed code ASTRA is achieved. New algorithm will be implemented into MARS15 code.

Eidelman, Yu.; /Novosibirsk, IYF; Mokhov, N.; Nagaitsev, S.; Solyak, N.; /Fermilab

2011-03-01T23:59:59.000Z

462

Simulations of Ion Migration in the LCLS RF Gun and Injector  

SciTech Connect (OSTI)

The motivation for this work was the observed surface contamination of the first LCLS RF gun copper cathode. We will present the results of simulations in regards to ion migration in the LCLS gun. Ions of residual gases will be created by interaction of molecular gas species with the UV drive laser beam and by the electron beam itself. The larger part of those ionized molecules remain in the vicinity of creation, are transported towards beam line walls or away from the cathode. However a small fraction gains enough kinetic energy, focused by RF and magnetic fields and propagates to the cathode, producing an undesirable increase of the cathode's surface work function. Although this fraction is small, during long term operation, this effect may become a significant factor limiting the source performance.

Brachmann, Axel; /SLAC; Dowell, David; /SLAC

2012-06-25T23:59:59.000Z

463

RF Surface Impedance Characterization of Potential New Materials for SRF-based Accelerators  

SciTech Connect (OSTI)

In the development of new superconducting materials for possible use in SRF-based accelerators, it is useful to work with small candidate samples rather than complete resonant cavities. The recently commissioned Jefferson Lab RF Surface Impedance Characterization (SIC) system can presently characterize the central region of 50 mm diameter disk samples of various materials from 2 to 40 K exposed to RF magnetic fields up to 14 mT at 7.4 GHz. We report the recent measurement results of bulk Nb, thin film Nb on Cu and sapphire substrates, Nb{sub 3}Sn sample, and thin film MgB{sub 2} on sapphire substrate provided by colleagues at JLab and Temple University.

Xiao, Binping [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States) and College of William and Mary, Williamsburg, VA (United States); Eremeev, Grigory V. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Phillips, H. Lawrence [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Kelley, Michael J. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2012-09-01T23:59:59.000Z

464

Permanent-magnet helicon sources and arrays: A new type of rf plasma  

SciTech Connect (OSTI)

Helicon discharges are known for their ability to produce high densities of partially ionized plasma, their efficiency arising from an unusual mechanism of rf coupling. However, the requirement of a dc magnetic field has prevented their wide acceptance in industry. The use of permanent magnets greatly simplifies helicon sources, and arrays of small sources extend the use of helicons to the processing of large substrates. An eight-tube array was designed and constructed, and its density uniformity measured in a 53x165 cm{sup 2} chamber. Three innovations involved (a) the remote field of ring magnets, (b) a low-field density peak, and (c) rf power distribution. High-density plasmas uniform over large areas requires compatibility in all three areas.

Chen, Francis F.; Torreblanca, Humberto [University of California, Los Angeles, California 90095-1594 (United States)

2009-05-15T23:59:59.000Z

465

A 201-MHz Normal Conducting RF Cavity for the International MICE Experiment  

SciTech Connect (OSTI)

MICE is a demonstration experiment for the ionization cooling of muon beams. Eight RF cavities are proposed to be used in the MICE cooling channel. These cavities will be operated in a strong magnetic field; therefore, they must be normal conducting. The cavity design and construction are based on the successful experience and techniques developed for a 201-MHz prototype cavity for the US MUCOOL program. Taking advantage of a muon beamâ s penetration property, the cavity employs a pair of curved thin beryllium windows to terminate conventional beam irises and achieve higher cavity shunt impedance. The cavity resembles a round, closed pillbox cavity. Two half-shells spun from copper sheets are joined by e-beam welding to form the cavity body. There are four ports on the cavity equator for RF couplers, vacuum pumping and field probes. The ports are formed by means of an extruding technique.

Li, D.; DeMello, A.J.; Virostek, Steve; S. Zisman, Michael; Rimmer, Robert

2008-07-01T23:59:59.000Z

466

Design methodologies for built-in testing of integrated RF transceivers with the on-chip loopback technique  

E-Print Network [OSTI]

Advances toward increased integration and complexity of radio frequency (RF) andmixed-signal integrated circuits reduce the effectiveness of contemporary testmethodologies and result in a rising cost of testing. The focus in this research...

Onabajo, Marvin Olufemi

2009-05-15T23:59:59.000Z

467

Design of a horizontal test cryostat for superconducting RF cavities for the FREIA facility at Uppsala University  

SciTech Connect (OSTI)

Uppsala University is constructing a large scale facility, called FREIA (Facility for Research Instrumentation and Accelerator Development). FREIA includes a helium liquefier and an accelerator test facility and has the capacity to test superconducting radio-frequency (RF) cavities with the same RF system and RF power level as in an accelerator. A central element of FREIA is a horizontal test cryostat connected in closed loop to a helium liquefier. This cryostat can house two fully equipped (tuners, piezo, power coupler, helium tank) superconducting cavities to perform full RF high power tests and operate at temperatures between 1.8 K and 4.2 K. The cryostat is designed to accommodate a large array of superconducting cavities and magnets, among which the European Spallation Source (ESS) type spoke and high-? elliptical cavities as well as TESLA/ILC type elliptical cavities. The present status of the project and the design of the cryostat are reported.

Chevalier, N. R.; Thermeau, J.-P.; Bujard, P.; Junquera, T. [Accelerators and Cryogenic Systems (ACS), 86 rue de Paris, 91400 Orsay (France); Hermansson, L.; Kern, R. Santiago; Ruber, R. [Uppsala University, Department of Physics and Astronomy, 75120 Uppsala (Sweden)

2014-01-29T23:59:59.000Z

468

A 900MHz RF Energy Harvesting Module TARIS Thierry, VIGNERAS Valrie  

E-Print Network [OSTI]

Abstract --This paper presents a guideline to design and optimize a RF energy harvester operating in ISM-the-shelf devices. The topology of the impedance transformation block is selected to reduce the losses which sensitivity of -22.5 dBm for a dc output voltage of 200 mV up to -11 dBm for 1.08 V. A wireless power

Paris-Sud XI, Université de

469

A PARAMETRIC STUDY OF BCS RF SURFACE IMPEDANCE WITH MAGNETIC FIELD USING THE XIAO CODE  

SciTech Connect (OSTI)

A recent new analysis of field-dependent BCS rf surface impedance based on moving Cooper pairs has been presented.[1] Using this analysis coded in Mathematica TM, survey calculations have been completed which examine the sensitivities of this surface impedance to variation of the BCS material parameters and temperature. The results present a refined description of the "best theoretical" performance available to potential applications with corresponding materials.

Reece, Charles E. [JLAB; Xiao, Binping [JLAB, BNL

2013-09-01T23:59:59.000Z

470

High Power Testing of RF Cavities for the PEP II B Factory  

SciTech Connect (OSTI)

We describe the process of conditioning and high-power testing of RF cavities for PEP-II. Procedures for vacuum assembly, bakeout and automated processing are described. Interlocks and safety precautions for protection of equipment and personnel are discussed and performance data of tested cavity assemblies are reported. Performance of ancillary components such as windows, couplers and tuners is also discussed. Comments are included on handling, alignment, installation and commissioning issues where appropriate.

Rimmer, R.A.; /LBL, Berkeley; Allen, M.; Fant, K.; Hill, A.; Hoyt, M.; Judkins, J.; Neubauer, Mark Stephen; Schwarz, H.; /SLAC

2011-09-01T23:59:59.000Z

471

Uniform longitudinal beam profiles in the Fermilab Recycler using adaptive rf correction  

SciTech Connect (OSTI)

The Fermilab Recycler Ring is a permanent magnet based 8 GeV anti-proton storage ring. A wideband RF system, driven with ARB's (ARBitrary waveform generators), allows the system to produce programmable barrier waveforms. Beam current profile distortion was observed, its origin verified both experimentally and theoretically, and an FPGA-based correction system was designed, tested and implemented to level the bunch profile.

Hu, Martin; Broemmelsiek, Daniel Robert; Chase, Brian; Crisp, James L.; Eddy, Nathan; Joireman, Paul W.; Ng, King Yuen; /Fermilab

2007-06-01T23:59:59.000Z

472

Structure of Velocity Distribution of Sheath-Accelerated Secondary Electrons in Asymmetric RF-DC Discharge  

E-Print Network [OSTI]

The ballistic population is thought to be responsible for alleviating the electron shading effect and the notching of the photoresist layer. We have performed test-particle simulations where the features in the EVDF of electrons impacting the RF electrode are fully resolved at all energies. An analytic model has been developed to predict existence of peaked and step-like structures in the EVDF.

Khrabrov, Alexander V; Ventzek, Peter L G; Ranjan, Alok; Chen, Lee

2015-01-01T23:59:59.000Z