National Library of Energy BETA

Sample records for zn zurn ot

  1. OTS NOTE

    Office of Legacy Management (LM)

    941 OTS NOTE DATE: July 2, 1990 TO: W. Alexander Williams FROM : Don Mackenzie d%? SUBJECT: Elimination of 3 Facilities from NSRAP . + 9 Enclosed are elimination recommendations...

  2. OTS NOTE

    Office of Legacy Management (LM)

    * pp4 r G- .2- OTS NOTE DATE: April 24, 1991 TO: Alexander Williams FROM: Dan Stou tF L SUBJECT: American Potash and Chemical Company Elimination Recommendation The attached...

  3. James L. Liveman, Acting AssLBtaOt

    Office of Legacy Management (LM)

    1 - * -w : L i P / ' 5- . . . c James L. Liveman, Acting AssLBtaOt Secretay for 2nv??Onnur_nt ( IQ UZT'ZXSI~ OF :ZZ&JA On Dctezher 6, 1977, and ridtcr E. smitil, Edward J . Jaacwsky , De?ar+nent of hrgarme SaCanal Laborawry (AS.), _- _. - - -zatzgy (DOE), visited tlhe University of iJeva&, Ekekay ScMal of %iaes. The purpose ___ was to dLscu!38 tke -8: opcraZ4Qns of tbcse fuCti'I?-'n= **-A-- A e fl' the v?L&gl: ~~ BHIC --c-r &atic . - . dtselopxzeat studies on vsrlous tppes of

  4. OTS NOTE

    Office of Legacy Management (LM)

    work site by the National Lead Company of Ohio (NLO), an Atomic Energy Commission (AEC) prime contractor. The data sheets indicate that the former Baker-Perkins Company...

  5. OTS NOTE

    Office of Legacy Management (LM)

    ... characteristics of uranium metal, DuPont (as agent for Manhattan Engineering ... prior to completion of this work, DuPont placed Purchase Order RPG-800 l2 with ...

  6. OTS NOTE

    Office of Legacy Management (LM)

    FUSRAP NJ.18 Exxon Research and Engineering Company The Former Standard Oil Development Company Linden, New Jersey Site Function In the spring of 1942, Standard Oil Development ...

  7. OTS NOTE

    Office of Legacy Management (LM)

    c3 Alexander Williams FROM: Ed Mitchellcm SUBJECT: Babcock and Wilcox Elimination Recommendation The purpose of this note is to provide you with certain inf regarding the...

  8. OTS NOTE

    Office of Legacy Management (LM)

    2, 1990 TO: W. Alexander Williams FROM: Don Mackenzie &d> SUBJECT: Elimination of 3 Facilities from FUSRAP Enclosed are elimination recommendations for Vitro Chemical Co.,...

  9. OTS NOTE

    Office of Legacy Management (LM)

    January 15, 1991 TO: Alexander Williams FROM: Dan Stout@ SUBJECT: Gruen Watch Company Consideration Recommendation Attached for your review is a consideration recommendation for...

  10. OTS NOTE

    Office of Legacy Management (LM)

    @ 'Alexander Williams FROM: Ed Mitchellqm SUBJECT: W.R. Grace Elimination Recommendation The purpose of this note is to provide you with certain information regarding the recommendation to eliminate W.R. Grace Company (the former Heavy Minerals Company), Chicago,Illinois, from consideration as a site under FUSRAP. Enclosed is a memo dated July 9, 1990: FUSRAP Considered Site Recommendation, for W.R. Grace Company. It recommends elimination in accordance with FUSRAP protocol. Also enclosed is

  11. OTS NOTF

    Office of Legacy Management (LM)

    NOTF DATE: December 18, 1990 TO: Alexander Williams, FROM:~ Dan Stou d- SUBJECT: Additional Considered Sites During historical searches I have identified several potential considered sites. .Two historical documents referencing three sites are attached and highlighted. The first attachment refers ,to'a four pound uranium rod shipped to the Catalytic Company (the Fernald construction contractor). It also notes that 100 pounds of uranium oxide was shipped to the,Milwaukee airport for Fred Stroke

  12. OTS NOTE

    Office of Legacy Management (LM)

    Source Material q Residue 0 Natural Radioactive Material from Non-Nuclear Activities 0 Man-Made 0 Other--- Comment ---...

  13. OT SPECIFIED I OTHER AMENDMENT OF SOLICITATI ON/MODIFICATION OF CONTRACT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OT SPECIFIED I OTHER AMENDMENT OF SOLICITATI ON/MODIFICATION OF CONTRACT 2 AM EN DMENT/MODIFIC ATION NO 1 B 6 ISSUED BY CODE Oak UrJge u . s . De arcment of Energ y P . O. Box 2001 Oak Ridge TN 37831 3 EFFccnv E DA E Sep Bl c..c.k _6C 00518 8 NAME AND ADDRESS OF CONTRACTOR INo ~/e.' CO Ull/y. Sial. and ZIP Cod.) OAK RIDGE A SOCIATED Ul IVERSITIES , P . O. BOX 117 OAK R-DGE Ttl 37830-6218 N . CODE 0411522 24 FAC ILITY CODE 1 CONTRACT 10 CODE 4 R OUISITIONIPU RCHASr. REO NO IuS lL 7 ADMIN ISTER ED

  14. ?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8,

    Office of Legacy Management (LM)

    GE 1 ;" qr)-1 s?llq ' p raspy.. c" ifa K. mris I talked with Hr. Wllllm cIF(Iy, Metrllurgist, Wnlon CarbId@ Nuclear cOrp8ny, 08k B&t&$@, Tenne66ee, on April 26, 1961. He informed me th&t the #rtioMl Northern birislon, Ame~ic6.n ?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8, la pePfopn1~ lo8lve forming studier for the. ilnion olo)w Wuolem Conpmy "p l7?JHa). The work at National Northern l#rirc.- alon ir under the 6upenl6lon of Ehsll Phillpohuc4~, v of

  15. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications

    SciTech Connect (OSTI)

    Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos,A. Paul

    2007-05-01

    Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.

  16. Y H-S I-H HATIOHAL LEAth~~Y~~OF' OtUO ' Industrial Hygiene No...

    Office of Legacy Management (LM)

    H-S I-H HATIOHAL LEAthYOF' OtUO ' Industrial Hygiene No. P.O. Box 158)At.' He&bykation Sample Nos. ? Sk. 0 qq Cinchnail 31;Obio Type of SampleCI" lz -- HEALTH AND SAFETY ...

  17. THE DIVERSITY OF MASSIVE STAR OUTBURSTS. I. OBSERVATIONS OF SN2009ip, UGC 2773 OT2009-1, AND THEIR PROGENITORS

    SciTech Connect (OSTI)

    Foley, Ryan J.; Berger, Edo; Challis, Peter J.; Soderberg, Alicia M.; Fox, Ori; Levesque, Emily M.; Ivans, Inese I.; Rhoads, James E.

    2011-05-01

    Despite both being outbursts of luminous blue variables (LBVs), SN 2009ip and UGC 2773 OT2009-1 have very different progenitors, spectra, circumstellar environments, and possibly physical mechanisms that generated the outbursts. From pre-eruption Hubble Space Telescope images, we determine that SN 2009ip and UGC 2773 OT2009-1 have initial masses of {approx}> 60 and {approx}> 25 M{sub sun}, respectively. Optical spectroscopy shows that at peak, SN 2009ip had a 10,000 K photosphere and its spectrum was dominated by narrow H Balmer emission, similar to classical LBV giant outbursts, also known as 'supernova impostors'. The spectra of UGC 2773 OT2009-1, which also have narrow H{alpha} emission, are dominated by a forest of absorption lines, similar to an F-type supergiant. Blueshifted absorption lines corresponding to ejecta at a velocity of 2000-7000 km s{sup -1} are present in later spectra of SN 2009ip-an unprecedented observation for LBV outbursts, indicating that the event was the result of a supersonic explosion rather than a subsonic outburst. The velocity of the absorption lines increases between two epochs, suggesting that there were two explosions in rapid succession. A rapid fading and rebrightening event concurrent with the onset of the high-velocity absorption lines is consistent with the double-explosion model. A near-infrared excess is present in the spectra and photometry of UGC 2773 OT2009-1 that is consistent with {approx}2100 K dust emission. We compare the properties of these two events and place them in the context of other known massive star outbursts such as {eta} Car, NGC 300 OT2008-1, and SN 2008S. This qualitative analysis suggests that massive star outbursts have many physical differences that can manifest as the different observables seen in these two interesting objects.

  18. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect (OSTI)

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  19. Structural and optical properties of ZnO and ZnO:Fe nanoparticles under

    Office of Scientific and Technical Information (OSTI)

    dense electronic excitations (Journal Article) | SciTech Connect Structural and optical properties of ZnO and ZnO:Fe nanoparticles under dense electronic excitations Citation Details In-Document Search Title: Structural and optical properties of ZnO and ZnO:Fe nanoparticles under dense electronic excitations We report on the changes in structural, morphological, and optical properties of sol-gel derived ZnO and ZnO:Fe nanoparticles due to dense electronic excitations produced by heavy ion

  20. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  1. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  2. OTS NOTE DATE: TO: FROM:

    Office of Legacy Management (LM)

    TO: FROM: March 25, 1991 A. Williams D. stout P SUBJECT: Elimination Recommendation for the Star Cutter Corporation The .attached memorandum and supporting documents are the basis ...

  3. An electrostatic nanogenerator based on ZnO/ZnS core/shell electrets with stabilized quasi-permanent charge

    SciTech Connect (OSTI)

    Wang, Chao; Cai, Liang; Feng, Yajuan; Chen, Lin; Yan, Wensheng E-mail: zhsun@ustc.edu.cn; Liu, Qinghua; Yao, Tao; Hu, Fengchun; Pan, Zhiyun; Sun, Zhihu E-mail: zhsun@ustc.edu.cn; Wei, Shiqiang

    2014-06-16

    ZnO-based nanogenerators with excellent performance and convenient functionalization are particularly desirable for self-powered technology, which is however difficult to achieve simultaneously in traditional piezoelectric ZnO nanogenerators. Here, we report a design of electrostatic ZnO nanogenerator by virtue of a type-II ZnO/ZnS core/shell nanostructure electrets, which can turn acoustic waves into electric power with an energy conversion efficiency of 2.2%. The ZnO/ZnS core/shell electrets are charged by ultraviolet irradiation with a long-term stability of the electrostatic charges under ambient condition. The electronic and atomic structure evolution in the charged ZnO/ZnS core/shell electrets are also discussed by detailed experimental and theoretical investigations. This design opens up an alternative path for fabricating robust ZnO-based nanogenerator for future nanotechnology application.

  4. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Wenyan; Zhang, Yu; Ruan, Cheng; Wang, Dan; Zhang, Tieqiang; Feng, Yi; Gao, Wenzhu; Yin, Jingzhi; Wang, Yiding; Riley, Alexis P.; et al

    2015-01-01

    The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to themore » low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.« less

  5. ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huso, Jesse; Morrison, John L.; Che, Hui; Sundararajan, Jency P.; Yeh, Wei Jiang; McIlroy, David; Williams, Thomas J.; Bergman, Leah

    2011-01-01

    An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

  6. Homoepitaxy of ZnO and MgZnO Films at 90 C

    SciTech Connect (OSTI)

    Ehrentraut, Dirk; Goh, Gregory K.L.; Fujii, Katsushi; Ooi, Chin Chun; Quang, Le Hong; Fukuda, Tsuguo; Kano, Masataka; Zhang, Yuantao; Matsuoka, Takashi

    2014-06-01

    The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, Mg{sub x}Zn{sub 1?x}O, films under very low temperature conditions at T=90 C and ambient pressure has been explored. A maximum Mg content of 1 mol% was recorded by energy dispersive spectroscopy. The growth on the polar (0 0 0 1) and (0 0 0 1) faces resulted in films that are strongly different in their structural and optical quality as evidenced by high-resolution X-ray diffraction, secondary electron microscopy, and photoluminescence. This is a result of the chemistry and temperature of the solution dictating the stability range of growth-governing metastable species. The use of trisodium citrate, Na{sub 3}C{sub 6}H{sub 5}O{sub 7}, yielded coalesced, mirror-like homoepitaxial films whereas adding magnesium nitrate hexahydrate, Mg(NO{sub 3}){sub 2}6H{sub 2}O, favors the growth of films with pronounced faceting. - Graphical abstract: Homoepitaxial ZnO films grown from aqueous solution below boiling point of water on a ZnO substrate with off-orientation reveal parallel grooves that are characterized by (1 0 1{sup } 1) facets. Adding trisodium citrate yields closed, single-crystalline ZnO films, which can further be functionalized. Alloying with MgO yields MgZnO films with low Mg content only. - Highlights: A simple method to synthesize uniform single crystalline homoepitaxial ZnO and MgZnO films. ZnO growth on (0 0 0 1) and (0 0 0 1{sup }) face resulted in films that are strongly different in their structural and optical quality. Single crystalline MgZnO film was fabricated under mild conditions (90 C and ambient pressure). Mg incorporation of nearly 1 mol% was obtained while maintaining single phase wurtzite structure.

  7. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots...

    Office of Scientific and Technical Information (OSTI)

    Title: Wide emission-tunable CdTeSeZnSeZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an ...

  8. Electroluminescence of ZnO-based semiconductor heterostructures

    SciTech Connect (OSTI)

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  9. Formation of Zn-rich phyllosilicate, Zn-layered double hydroxide and hydrozincite in contaminated calcareous soils

    SciTech Connect (OSTI)

    Jacquat, Olivier; Voegelin, Andreas; Villard, Andre; Marcus, Matthew A.; Kretzschmar, Ruben

    2007-10-15

    Recent studies demonstrated that Zn-phyllosilicate- and Zn-layered double hydroxide-type (Zn-LDH) precipitates may form in contaminated soils. However, the influence of soil properties and Zn content on the quantity and type of precipitate forming has not been studied in detail so far. In this work, we determined the speciation of Zn in six carbonate-rich surface soils (pH 6.2 to 7.5) contaminated by aqueous Zn in the runoff from galvanized power line towers (1322 to 30090 mg/kg Zn). Based on 12 bulk and 23 microfocused extended X-ray absorption fine structure (EXAFS) spectra, the number, type and proportion of Zn species were derived using principal component analysis, target testing, and linear combination fitting. Nearly pure Zn-rich phyllosilicate and Zn-LDH were identified at different locations within a single soil horizon, suggesting that the local availabilities of Al and Si controlled the type of precipitate forming. Hydrozincite was identified on the surfaces of limestone particles that were not in direct contact with the soil clay matrix. With increasing Zn loading of the soils, the percentage of precipitated Zn increased from {approx}20% to {approx}80%, while the precipitate type shifted from Zn-phyllosilicate and/or Zn-LDH at the lowest studied soil Zn contents over predominantly Zn-LDH at intermediate loadings to hydrozincite in extremely contaminated soils. These trends were in agreement with the solubility of Zn in equilibrium with these phases. Sequential extractions showed that large fractions of soil Zn ({approx}30% to {approx}80%) as well as of synthetic Zn-kerolite, Zn-LDH, and hydrozincite spiked into uncontaminated soil were readily extracted by 1 M NH{sub 4}NO{sub 3} followed by 1 M NH{sub 4}-acetate at pH 6.0. Even though the formation of Zn precipitates allows for the retention of Zn in excess to the adsorption capacity of calcareous soils, the long-term immobilization potential of these precipitates is limited.

  10. Development of a Solar-Thermal ZnO/Zn Water-Splitting Thermochemical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Development of a Solar-thermal ZnOZn Water-splitting Thermochemical Cycle Final Report ... Combining this with annual average solar efficiencies, the overall solar to hydrogen LHV ...

  11. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  12. Impact of air-exposure on the chemical and electronic structure ofZnO:Zn3N2 thin films

    SciTech Connect (OSTI)

    Bar, M.; Ahn, K.-S.; Shet, S.; Yan, Y.; Weinhardt, L.; Fuchs, O.; Blum, M.; Pookpanratana, S.; George, K.; Yang, W.; Denlinger, J.D.; Al-Jassim, M.; Heske, C.

    2008-09-08

    The chemical and electronic surface structure of ZnO:Zn3N2 ("ZnO:N") thin films with different N contents was investigated by soft x-ray emission spectroscopy. Upon exposure to ambient air (in contrast to storage in vacuum), the chemical and electronic surface structure of the ZnO:N films changes substantially. In particular, we find that the Zn3N2/(Zn3N2+ZnO) ratio decreases with exposure time and that this change depends on the initial N content. We suggest a degradation mechanism based on the reaction of the Zn3N2 content with atmospheric humidity.

  13. Spin noise spectroscopy of ZnO

    SciTech Connect (OSTI)

    Horn, H.; Berski, F.; Hbner, J.; Oestreich, M.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  14. Stable highly conductive ZnO via reduction of Zn vacancies

    SciTech Connect (OSTI)

    Look, David C.; Droubay, Timothy C.; Chambers, Scott A.

    2012-09-04

    Growth of Ga-doped ZnO by pulsed laser deposition at 200 ?C in an ambient of Ar and H2 produces a resistivity ? of ~ 1.5 x 10-4 ?-cm, stable to 500 ?C. Annealing on Zn foil reduces ? to ~ 1.2 x 10-4 ?-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

  15. RAMATION V=W Ot TOTS= t sAy VnoffZW COMM1 AV 10i90 2M3 AM=W V A CLSI~LL331M A1N2UW

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  16. Optical probing of MgZnO/ZnO heterointerface confinement potential energy levels

    SciTech Connect (OSTI)

    Solovyev, V. V.; Van'kov, A. B.; Kukushkin, I. V.; Falson, J.; Kozuka, Y.; Zhang, D.; Smet, J. H.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2015-02-23

    Low-temperature photoluminescence and reflectance measurements were employed to study the optical transitions present in two-dimensional electron systems confined at Mg{sub x}Zn{sub 1x}O/ZnO heterojunctions. Transitions involving A- and B-holes and electrons from the two lowest subbands formed within the confinement potential are detected. In the studied density range of 2.06.5??10{sup 11?}cm{sup ?2}, the inter-subband splitting is measured and the first excited electron subband is shown to be empty of electrons.

  17. Optical Properties of ZnO-Alloyed Nanocrystalline Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Che, Hui; Huso, Jesse; Morrison, John L.; Thapa, Dinesh; Huso, Michelle; Yeh, Wei Jiang; Tarun, M. C.; McCluskey, M. D.; Bergman, Leah

    2012-01-01

    ZnO is emore » merging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on M g x Z n 1 − x O and Z n S 1 − x O x nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg 0 .3 Zn 0 .7 O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg 0 .3 Zn 0 .7 O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS 0 .76 O 0 .24 and ZnS 0 .16 O 0 .84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS 0 .16 O 0 .84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification.« less

  18. Evolution of quasiparticle states with and without a Zn impurity...

    Office of Scientific and Technical Information (OSTI)

    Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Citation Details In-Document Search Title: Evolution of quasiparticle states with and ...

  19. Piezoelectric and luminescent properties of ZnO nanostructures...

    Office of Scientific and Technical Information (OSTI)

    Title: Piezoelectric and luminescent properties of ZnO nanostructures on Ag films. No abstract prepared. Authors: Tallant, David Robert ; Missert, Nancy A. ; Scrymgeour, David ; ...

  20. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their

    Office of Scientific and Technical Information (OSTI)

    conjugation with E. coli O-157 (Journal Article) | SciTech Connect Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Citation Details In-Document Search Title: Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an injection controlled process. * 3-D PL spectra of core-shell QDs show different excitation wavelength dependence. *

  1. Hierarchical ZnO Structures Templated with Amino Acid Based Surfactant...

    Office of Scientific and Technical Information (OSTI)

    Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants Citation Details In-Document Search Title: Hierarchical ZnO Structures Templated with Amino Acid Based ...

  2. Enhancement of photoluminescence properties in ZnO/AlN bilayer...

    Office of Scientific and Technical Information (OSTI)

    in ZnOAlN bilayer heterostructures grown by atomic layer deposition Citation Details In-Document Search Title: Enhancement of photoluminescence properties in ZnOAlN ...

  3. Neutral nitrogen acceptors in ZnO: The {sup 67}Zn hyperfine interactions

    SciTech Connect (OSTI)

    Golden, E. M.; Giles, N. C.; Evans, S. M.; Halliburton, L. E.

    2014-03-14

    Electron paramagnetic resonance (EPR) is used to characterize the {sup 67}Zn hyperfine interactions associated with neutral nitrogen acceptors in zinc oxide. Data are obtained from an n-type bulk crystal grown by the seeded chemical vapor transport method. Singly ionized nitrogen acceptors (N{sup −}) initially present in the crystal are converted to their paramagnetic neutral charge state (N{sup 0}) during exposure at low temperature to 442 or 633 nm laser light. The EPR signals from these N{sup 0} acceptors are best observed near 5 K. Nitrogen substitutes for oxygen ions and has four nearest-neighbor cations. The zinc ion along the [0001] direction is referred to as an axial neighbor and the three equivalent zinc ions in the basal plane are referred to as nonaxial neighbors. For axial neighbors, the {sup 67}Zn hyperfine parameters are A{sub ‖} = 37.0 MHz and A{sub ⊥} = 8.4 MHz with the unique direction being [0001]. For nonaxial neighbors, the {sup 67}Zn parameters are A{sub 1} = 14.5 MHz, A{sub 2} = 18.3 MHz, and A{sub 3} = 20.5 MHz with A{sub 3} along a [101{sup ¯}0] direction (i.e., in the basal plane toward the nitrogen) and A{sub 2} along the [0001] direction. These {sup 67}Zn results and the related {sup 14}N hyperfine parameters provide information about the distribution of unpaired spin density at substitutional neutral nitrogen acceptors in ZnO.

  4. Electrodeposition of Zn based nanostructure thin films for photovoltaic applications

    SciTech Connect (OSTI)

    Al-Bathi, S. A. M.

    2015-03-30

    We present here a systematic study on the synthesis thin films of various ZnO, CdO, Zn{sub x}Cd{sub 1-x} (O) and ZnTe nanostructures by electrodeposition technique with ZnCl{sub 2,} CdCl{sub 2} and ZnSO{sub 4} solution as starting reactant. Several reaction parameters were examined to develop an optimal procedure for controlling the size, shape, and surface morphology of the nanostructure. The results showed that the morphology of the products can be carefully controlled through adjusting the concentration of the electrolyte. The products present well shaped Nanorods arrays at specific concentration and temperature. UV-VIS spectroscopy and X-ray diffraction results show that the product presents good crystallinity. A possible formation process has been proposed.

  5. Mobility of indium on the ZnO(0001) surface

    SciTech Connect (OSTI)

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  6. Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

    SciTech Connect (OSTI)

    K, P.; Tekmen, S.; Baltakesmez, A.; Tzemen, S.; Meral, K.; Onganer, Y.

    2013-12-15

    In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from ?0.9 V to ?1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively.

  7. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  8. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of air-gap dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  9. Electrodeposition of zinc on glassy carbon from ZnCl/sub 2/ and ZnBr/sub 2/ electrolytes

    SciTech Connect (OSTI)

    McBreen, J.; Gannon, E.

    1983-08-01

    The initial stages of the electrocrystallization of zinc from 3M ZnCl/sub 2/ and 3M ZnBr/sub 2/ on glassy carbon has been investigated using cyclic voltametry, the potential step method, and scanning electron microscopy. Particular care was taken to ensure electrolyte purity and to eliminate resistance effects in the measurements. The nucleation overvoltage in 3M ZnCl/sub 2/ was about 17 and about 12 mV in 3M ZnBr/sub 2/. In 3M ZnCl/sub 2/, the current transients from the potential step measurements could be fitted to a simple model that assumes instantaneous nucleation followed by growth of three dimensional centers under kinetic control. A similar mechanism is operative for 3M ZnBr/sub 2/ at low overvoltages. At higher overvoltages, the current transient is governed by mixed kinetic and diffusion control and cannot be fitted to a simple model. The lower nucleation overvoltage and the faster kinetics in 3M ZnBr/sub 2/ is correlated with the lower stability constants for the zinc bromide complexes. Erroneous results are obtained when resistance effects are not accounted for.

  10. Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

    SciTech Connect (OSTI)

    Maaloul, L.; Gangwar, R. K.; Stafford, L.

    2015-07-15

    A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from ?115 to ?300?V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5??1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200500?nm revealed a constant excitation temperature of 0.33??0.04?eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12?cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

  11. Pressure-Induced Structural Transformations of ZnO Nanowires...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Pressure-Induced Structural Transformations of ZnO Nanowires Probed by X-ray Diffraction Citation Details In-Document Search Title: Pressure-Induced Structural ...

  12. Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kelly, Priscilla; Liu, Mingzhao; Kuznetsova, Lyuba

    2016-04-07

    In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8more » μm wavelength.« less

  13. Selective Zn2+ sensing using a modified bipyridine complex

    SciTech Connect (OSTI)

    Akula, Mahesh; El-Khoury, Patrick Z.; Nag, Amit; Bhattacharya, Anupam

    2014-06-01

    A novel fluorescent Zn2+ sensor, 4-(pyridin-2-yl)-3H-pyrrolo[2, 3-c]quinoline (PPQ), has been designed, synthesized and characterized by various spectroscopic and analytical techniques. PPQ exhibits superior detection of Zn2+ in the presence of various cations tested, including Cd2+ and Hg2+, via wavelength shifted fluorescence intensity enhancement. The emission wavelength at 500 nm, ensures probable noninterference from cellular components while performing biological applications.

  14. High efficient ZnO nanowalnuts photocatalyst: A case study

    SciTech Connect (OSTI)

    Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

    2014-11-15

    Highlights: Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. Morphologies and microstructures of the as-obtained ZnO products were investigated. The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  15. Synthesis of reduced graphene oxide/ZnO nanorods composites on graphene coated PET flexible substrates

    SciTech Connect (OSTI)

    Huang, Lei, E-mail: leihuang@shnu.edu.cn; Guo, Guilue; Liu, Yang; Chang, Quanhong; Shi, Wangzhou

    2013-10-15

    Graphical abstract: - Highlights: ZnO nanorods synthesized on CVD-graphene and rGO surfaces, respectively. ZnO/CVD-graphene and ZnO/rGO form a distinctive porous 3D structure. rGO/ZnO nanostructures possibility in energy storage devices. - Abstract: In this work, reduced graphene oxide (rGO)/ZnO nanorods composites were synthesized on graphene coated PET flexible substrates. Both chemical vapor deposition (CVD) graphene and reduced graphene oxide (rGO) films were prepared following by hydrothermal growth of vertical aligned ZnO nanorods. Reduced graphene sheets were then spun coated on the ZnO materials to form a three dimensional (3D) porous nanostructure. The morphologies of the ZnO/CVD graphene and ZnO/rGO were investigated by SEM, which shows that the ZnO nanorods grown on rGO are larger in diameters and have lower density compared with those grown on CVD graphene substrate. As a result of fact, the rough surface of nano-scale ZnO on rGO film allows rGO droplets to seep into the large voids of ZnO nanorods, then to form the rGO/ZnO hierarchical structure. By comparison of the different results, we conclude that rGO/ZnO 3D nanostructure is more desirable for the application of energy storage devices.

  16. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    SciTech Connect (OSTI)

    Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UVvisible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by JV curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ? ZnS layers were deposited with two different ways. ? The way of SILAR is more beneficial for retarding the back transfer of electrons. ? The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  17. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  18. Synthesis, characterization and optical properties of hybrid PVAZnO nanocomposite: A composition dependent study

    SciTech Connect (OSTI)

    Hemalatha, K.S. [Department of Physics, Bangalore University, Bangalore 560 056, Karnataka (India); Department of Physics, Maharani's Science College for Women, Palace Road, Bangalore 560 001, Karnataka (India); Rukmani, K., E-mail: rukmani9909@yahoo.co.in [Department of Physics, Bangalore University, Bangalore 560 056, Karnataka (India); Suriyamurthy, N. [Radiological Safety Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); Nagabhushana, B.M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore 560 054, Karnataka (India)

    2014-03-01

    Graphical abstract: - Highlights: ZnO nanoparticles were prepared by solution combustion method. PVAZnO nanocomposites were synthesized by solution casting method. Doped and undoped films were characterized using different techniques. Red shift in optical band gap was observed in Nanocomposite films with respect to nano ZnO. Photoluminescence intensity was found to be optimum for PVA10 mol% ZnO nanocomposite film. - Abstract: Nanocomposites of poly vinyl alcohol (PVA) and ZnO have been synthesized using the solution casting technique for different concentrations of nano ZnO powder prepared by low temperature solution combustion method. The formation of polymer nanocomposite and changes in the structural and micro structural properties of the materials were investigated by X-ray diffraction, Energy dispersive X ray spectroscopy and optical microscopy techniques (FTIR and UVVisible). The surface morphology of PVAZnO nanocomposite films were elucidated using Scanning Electron Microscopy. The optical absorption spectrum of nano ZnO shows blue shift in the optical band gap energy with respect to characteristic bulk ZnO at room temperature, whereas PVAZnO hybrid films show red shift with respect to nano ZnO. The photoluminescence studies show that the intensity of the blue emission (470 nm) varies with change in concentration of ZnO with an optimum intensity observed at 10 mol% of ZnO.

  19. Process for fabricating ZnO-based varistors

    DOE Patents [OSTI]

    Lauf, Robert J.

    1985-01-01

    The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi.sub.2 O.sub.3. The mix is hot-pressed to form a compact at temperatures below 850.degree. C. and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.

  20. Nitrogen is a deep acceptor in ZnO

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.

    2011-04-14

    Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. Thus the deep-acceptor behavior can be explained by the low energy of the ZnO valence bandmore » relative to the vacuum level.« less

  1. Process for fabricating ZnO-based varistors

    DOE Patents [OSTI]

    Lauf, R.J.

    The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi/sub 2/O/sub 3/. The mix is hot-pressed to form a compact at temperatures below 850/sup 0/C and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.

  2. High mobility ZnO nanowires for terahertz detection applications

    SciTech Connect (OSTI)

    Liu, Huiqiang; Peng, Rufang E-mail: chusheng@mail.sysu.edu.cn; Chu, Shijin; Chu, Sheng E-mail: chusheng@mail.sysu.edu.cn

    2014-07-28

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  3. Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping

    SciTech Connect (OSTI)

    Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak

    2007-12-03

    We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

  4. Alignment nature of ZnO nanowires grown on polished and nanoscale...

    Office of Scientific and Technical Information (OSTI)

    Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate ... Citation Details In-Document Search Title: Alignment nature of ZnO nanowires grown on ...

  5. Band alignment and interfacial structure of ZnO/Si heterojunction...

    Office of Scientific and Technical Information (OSTI)

    of ZnOSi heterojunction with Alsub 2Osub 3 and HfOsub 2 as interlayers Citation Details In-Document Search Title: Band alignment and interfacial structure of ZnOSi ...

  6. One-step electrochemical synthesis of a grapheneZnO hybrid for improved photocatalytic activity

    SciTech Connect (OSTI)

    Wei, Ang; Xiong, Li; Sun, Li; Liu, Yanjun; Li, Weiwei; Lai, Wenyong; Liu, Xiangmei; Wang, Lianhui; Huang, Wei; Dong, Xiaochen

    2013-08-01

    Graphical abstract: - Highlights: GrapheneZnO hybrid was synthesized by one-step electrochemical deposition. GrapheneZnO hybrid presents a special structure and wide UVvis absorption spectra. GrapheneZnO hybrid exhibits an exceptionally higher photocatalytic activity for the degradation of dye methylene blue. - Abstract: A grapheneZnO (G-ZnO) hybrid was synthesized by one-step electrochemical deposition. During the formation of ZnO nanostructure by cathodic electrochemical deposition, the graphene oxide was electrochemically reduced to graphene simultaneously. Scanning electron microscope images, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectra, and UVvis absorption spectra indicate the resulting G-ZnO hybrid presents a special structure and wide UVvis absorption spectra. More importantly, it exhibits an exceptionally higher photocatalytic activity for the degradation of dye methylene blue than that of pure ZnO nanostructure under both ultraviolet and sunlight irradiation.

  7. Yb-Zn-Al ternary system: CaCu{sub 5}-type derived compounds in...

    Office of Scientific and Technical Information (OSTI)

    Yb-Zn-Al ternary system: CaCusub 5-type derived compounds in the zinc-rich corner Citation Details In-Document Search Title: Yb-Zn-Al ternary system: CaCusub 5-type derived ...

  8. Structure of graphene oxide dispersed with ZnO nanoparticles

    SciTech Connect (OSTI)

    Yadav, Rishikesh Pandey, Devendra K.; Khare, P. S.

    2014-10-15

    Graphene has been proposed as a promising two-dimensional nanomaterial with outstanding electronic, optical, thermal and mechanical properties for many applications. In present work a process of dispersion of graphene oxide with ZnO nanoparticles in ethanol solution with different pH values, have been studied. Samples have been characterized by XRD, SEM, PL, UV-visible spectroscopy and particles size measurement. The results analysis indicates overall improved emission spectrum. It has been observed that the average diameter of RGO (Reduced Graphene Oxide) decreases in presence of ZnO nanoparticles from 3.8?m to 0.41?m.

  9. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  10. Photoinduced reduction of surface states in Fe:ZnO

    SciTech Connect (OSTI)

    Knut, R. Palmgren, P.; Karis, O.; Lagerqvist, U.; Pohl, A.; Pal, P.; Svedlindh, P.

    2015-05-28

    We report on the electronic structure of nano-crystalline Fe:ZnO, which has recently been found to be an efficient photocatalyst. Using resonant photoemission spectroscopy, we determine the binding energy of Fe 3d states corresponding to different valencies and coordination of the Fe atoms. The photo-activity of ZnO reduces Fe from 3+ to 2+ in the surface region of the nano-crystalline material due to the formation of oxygen vacancies. Electronic states corresponding to low-spin Fe{sup 2+} are observed and attributed to crystal field modification at the surface. These states are potentially important for the photocatalytic sensitivity to visible light due to their location deep in the ZnO bandgap. X-ray absorption and x-ray photoemission spectroscopy suggest that Fe is only homogeneously distributed for concentrations up to 3%. Increased concentrations does not result in a higher concentration of Fe ions in the surface region. This is limiting the photocatalytic functionality of ZnO, where the most efficient Fe doping concentration has been shown to be 1%-4%.

  11. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    SciTech Connect (OSTI)

    Miami University: Dr. Lei L. Kerr Wright State University: Dr. David C. Look and Dr. Zhaoqiang Fang

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  12. Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate

    SciTech Connect (OSTI)

    Xiang Wei

    2006-08-09

    This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in Ceramic Engineering and Science Proceedings (the 29th International Conference on Advanced Ceramics and Composites - Advances in Bioceramics and Biocomposites) [5].

  13. Theoretical study of syngas hydrogenation to methanol on the polar Zn-terminated ZnO(0001) surface

    SciTech Connect (OSTI)

    Zhao, Ya-Fan; Rousseau, Roger J.; Li, Jun; Mei, Donghai

    2012-08-02

    Methanol synthesis from syngas (CO/CO2/H2) hydrogenation on the perfect Znterminated polar ZnO(0001) surface have been investigated using periodic density functional theory calculations. Our results show that direct CO2 hydrogenation to methanol on the perfect ZnO(0001) surface is unlikely because in the presence of surface atomic H and O the highly stable formate (HCOO) and carbonate (CO3) readily produced from CO2 with low barriers 0.11 and 0.09 eV will eventually accumulate and block the active sites of the ZnO(0001) surface. In contrast, methanol synthesis from CO hydrogenation is thermodynamically and kinetically feasible on the perfect ZnO(0001) surface. CO can be consecutively hydrogenated into formyl (HCO), formaldehyde (H2CO), methoxy (H3CO) intermediates, leading to the final formation of methanol (H3COH). The reaction route via hydroxymethyl (H2COH) intermediate, a previously proposed species on the defected Oterminated ZnO( ) surface, is kinetically inhibited on the perfect ZnO(0001) surface. The rate-determining step in the consecutive CO hydrogenation route is the hydrogenation of H3CO to H3COH. We also note that this last hydrogenation step is pronouncedly facilitated in the presence of water by lowering the activation barrier from 1.02 to 0.55 eV. This work was supported by the U.S. Department of Energy Office of Basic Energy Sciences, Division of Chemical Sciences, Biosciences and Geosciences, and performed at EMSL, a national scientific user facility sponsored by the Department of Energys Office of Biological and Environmental Research located at Pacific Northwest National Laboratory (PNNL). Computational resources were provided at EMSL and the National Energy Research Scientific Computing Center at Lawrence Berkeley National Laboratory. J. Li and Y.-F. Zhao were also financially supported by the National Natural Science Foundation of China (Nos. 20933003 and 91026003) and the National Basic Research Program of China (No. 2011CB932400). Y.-F. Zhao acknowledges the fellowship from PNNL.

  14. Local structures of polar wurtzites Zn1-xMgxO studied by raman and 67Zn/25Mg NMR spectroscopies and by total neutron scattering

    SciTech Connect (OSTI)

    Proffen, Thomas E; Kim, Yiung- Il; Cadars, Sylvian; Shayib, Ramzy; Feigerle, Charles S; Chmelka, Bradley F; Seshadri, Ram

    2008-01-01

    Research in the area of polar semiconductor heterostructures has been growing rapidly, driven in large part by interest in two-dimensional electron gas (2DEG) systems. 2DEGs are known to form at heterojunction interfaces that bear polarization gradients. They can display extremely high electron mobilities, especially at low temperatures, owing to spatial confinement of carrier motions. Recent reports of 2DEG behaviors in Ga{sub 1-x}Al{sub x}N/GaN and Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have great significance for the development of quantum Hall devices and novel high-electron-mobility transistors (HEMTs). 2DEG structures are usually designed by interfacing a polar semiconductor with its less or more polar alloys in an epitaxial manner. Since the quality of the 2DEG depends critically on interface perfection, as well as the polarization gradient at the heterojunction, understanding compositional and structural details of the parent and alloy semiconductors is an important component in 2DEG design and fabrication. Zn{sub 1-x}Mg{sub x}O/ZnO is one of the most promising heterostructure types for studies of 2DEGs, due to the large polarization of ZnO, the relatively small lattice mismatch, and the large conduction band offsets in the Zn{sub 1-x}Mg{sub x}O/ZnO heterointerface. Although 2DEG formation in Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have been researched for some time, a clear understanding of the alloy structure of Zn{sub 1-x}Mg{sub x}O is currently lacking. Here, we conduct a detailed and more precise study of the local structure of Zn{sub 1-x}Mg{sub x}O alloys using Raman and solid-state nuclear magnetic resonance (NMR), in conjunction with neutron diffraction techniques.

  15. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    SciTech Connect (OSTI)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-30

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  16. Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping

    SciTech Connect (OSTI)

    Xiao, Qi Wang, Tao

    2013-08-01

    Graphical abstract: - Highlights: • Co-doped porous ZnO microspheres were synthesized. • 3 mol% Co-doped ZnO sensor showed the highest response to ethanol. • 3 mol% Co-doped ZnO sensor exhibited fast recovery property. • 3 mol% Co-doped ZnO sensor exhibited good selectivity and long-term stability. - Abstract: Porous Co-doped ZnO microspheres were prepared by a simple hydrothermal method combined with post-annealing. Co species existed as a form of divalent state in the sample and substituted Zn{sup 2+} sites in ZnO crystal lattice, which was affirmed by X-ray diffraction, UV–vis diffuse reflectance spectroscopy and X-ray photoelectron spectroscopy. The gas-sensing measurements demonstrated that the 3 mol% Co-doped ZnO sample showed the highest response value to 100 ppm ethanol at 350 °C, which were 5 folds higher than that of the pure ZnO sample. In addition, the 3 mol% Co-doped ZnO sensor exhibited fast recovery property, good quantitative determination, good selectivity and long-term stability. The superior sensing properties were contributed to high specific surface area combined with the large amount of oxygen vacancies originating from Co doping.

  17. Molecular dynamics simulation of annealed ZnO surfaces

    SciTech Connect (OSTI)

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

  18. Field emission properties of ZnO nanosheet arrays

    SciTech Connect (OSTI)

    Naik, Kusha Kumar; Rout, Chandra Sekhar E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in; Khare, Ruchita; More, Mahendra A.; Chakravarty, Disha; Late, Dattatray J. E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in; Thapa, Ranjit E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in

    2014-12-08

    Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm{sup 2} and current density of 50.1 μA/cm{sup 2} at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

  19. Coulomb Excitation of the N = 50 nucleus {sup 80}Zn

    SciTech Connect (OSTI)

    Van de Walle, J.; Cocolios, T. E.; Huyse, M.; Ivanov, O.; Mayet, P.; Raabe, R.; Sawicka, M.; Stefanescu, I.; Duppen, P. van; Aksouh, F.; Behrens, T.; Gernhauser, R.; Kroell, T.; Kruecken, R.; Bildstein, V.; Blazhev, A.; Eberth, J.

    2008-05-12

    Neutron rich Zinc isotopes, including the N = 50 nucleus {sup 80}Zn, were produced and post-accelerated at the Radioactive Ion Beam (RIB) facility REX-ISOLDE (CERN). Low-energy Coulomb excitation was induced on these isotopes after post-acceleration, yielding B(E2) strengths to the first excited 2{sup +} states. For the first time, an excited state in {sup 80}Zn was observed and the 2{sub 1}{sup +} state in {sup 78}Zn was established. The measured B(E2,2{sub 1}{sup +}{yields}0{sub 1}{sup +}) values are compared to two sets of large scale shell model calculations. Both calculations reproduce the observed B(E2) systematics for the full Zinc isotopic chain. The results for N = 50 isotones indicate a good N = 50 shell closure and a strong Z = 28 proton core polarization. The new results serve as benchmarks to establish theoretical models, predicting the nuclear properties of the doubly magic nucleus {sup 78}Ni.

  20. Enhanced photocatalytic performance of Ga{sup 3+}-doped ZnO

    SciTech Connect (OSTI)

    Zhong, Jun Bo; Li, Jian Zhang; Zeng, Jun; He, Xi Yang; Hu, Wei; Shen, Yue Cheng

    2012-11-15

    Graphical abstract: In general, the strong SPS response corresponds to the high separation rate of photoinduced charge carriers on the basis of the SPS principle. The photovoltage of Ga{sup 3+}-doped ZnO is higher than that of ZnO, thus it can be confirmed that the Ga{sup 3+}-doped ZnO has a higher charge separation rate than the ZnO sample. Among these samples, 1%Ga has highest charge separation rate. Display Omitted Highlights: ► Ga{sup 3+} has been employed to dope ZnO photocatalyst. ► Ga{sup 3+} increases the BET surface area and changes the morphology of ZnO. ► The photoinduced charge separation rate has been enhanced. ► The photocatalytic activity has been greatly promoted. -- Abstract: ZnO and Ga{sup 3+}-doped ZnO with different molar ratio of Ga/Zn (1%, 2% and 3%) were prepared by a parallel flow precipitation method. The photocatalysts prepared were characterized by BET surface area, X-ray diffraction (XRD), UV/vis diffuse reflectance spectroscopy (DRS), scanning electron microscope (SEM) and surface photovoltage spectroscopy (SPS), respectively. The results show that doping Ga{sup 3+} into ZnO increases the BET surface area. The XRD spectra of the photocatalysts calcined at 573 K show only the characteristic peaks of wurtzite-type. Ga{sup 3+}-doped ZnO absorbs much more light than ZnO in the visible light region. Doping Ga{sup 3+} into ZnO greatly changes the morphology of ZnO and enhances the photoinduced charge separation rate. The photocatalytic activity of ZnO and Ga{sup 3+}-doped ZnO for decolorization of methyl orange (MO) solution was evaluated, of all the photocatalysts prepared, the Ga{sup 3+}-doped ZnO with 1% possesses the best photocatalytic activity and the possible reason was discussed.

  1. Impact of strain on electronic defects in (Mg,Zn)O thin films

    SciTech Connect (OSTI)

    Schmidt, Florian Mller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius

    2014-09-14

    We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y?, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3 can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

  2. Phases in the Al-Yb-Zn system between 25 and 50 at% ytterbium (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect SciTech Connect Search Results Journal Article: Phases in the Al-Yb-Zn system between 25 and 50 at% ytterbium Citation Details In-Document Search Title: Phases in the Al-Yb-Zn system between 25 and 50 at% ytterbium Phases YbZn{sub 1-x}Al{sub x}, YbZn{sub 2-x}Al{sub x} and YbZn{sub 3-x}Al{sub x} were studied by electron microprobe analysis and X-ray single crystal and powder methods. The compound YbZn{sub 0.8}Al{sub 0.2} crystallizes with the CsCl-type, a=3.635(2)

  3. Enhancement of photoluminescence properties in ZnO/AlN bilayer

    Office of Scientific and Technical Information (OSTI)

    heterostructures grown by atomic layer deposition (Journal Article) | SciTech Connect Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition Citation Details In-Document Search Title: Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show

  4. Magnetism in undoped ZnS studied from density functional theory

    SciTech Connect (OSTI)

    Xiao, Wen-Zhi E-mail: llwang@hun.edu.cn; Rong, Qing-Yan; Xiao, Gang; Wang, Ling-ling E-mail: llwang@hun.edu.cn; Meng, Bo

    2014-06-07

    The magnetic property induced by the native defects in ZnS bulk, thin film, and quantum dots are investigated comprehensively based on density functional theory within the generalized gradient approximation + Hubbard U (GGA?+?U) approach. We find the origin of magnetism is closely related to the introduction of hole into ZnS systems. The relative localization of S-3p orbitals is another key to resulting in unpaired p-electron, due to Hund's rule. For almost all the ZnS systems under study, the magnetic moment arises from the S-dangling bonds generated by Zn vacancies. The charge-neutral Zn vacancy, Zn vacancy in 1? charge sate, and S vacancy in the 1+ charge sate produce a local magnetic moment of 2.0, 1.0, and 1.0??{sub B}, respectively. The Zn vacancy in the neutral and 1? charge sates are the important cause for the ferromagnetism in ZnS bulk, with a Curie temperature (T{sub C}) above room temperature. For ZnS thin film with clean (111) surfaces, the spins on each surface are ferromagnetically coupled but antiferromagnetically coupled between two surfaces, which is attributable to the internal electric field between the two polar (111) surfaces of the thin film. Only surface Zn vacancies can yield local magnetic moment for ZnS thin film and quantum dot, which is ascribed to the surface effect. Interactions between magnetic moments on S-3p states induced by hole-doping are responsible for the ferromagnetism observed experimentally in various ZnS samples.

  5. Alignment nature of ZnO nanowires grown on polished and nanoscale etched

    Office of Scientific and Technical Information (OSTI)

    lithium niobate surface through self-seeding thermal evaporation method (Journal Article) | SciTech Connect Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method Citation Details In-Document Search Title: Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method Highlights: * ZnO nanowires were grown directly on

  6. Preface: Thin Solid Films Topical Special Issue on ZnO Related Transparent

    Office of Scientific and Technical Information (OSTI)

    Conductive Oxides (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Preface: Thin Solid Films Topical Special Issue on ZnO Related Transparent Conductive Oxides Citation Details In-Document Search Title: Preface: Thin Solid Films Topical Special Issue on ZnO Related Transparent Conductive Oxides World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast

  7. III-nitrides on oxygen- and zinc-face ZnO substrates (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect SciTech Connect Search Results Journal Article: III-nitrides on oxygen- and zinc-face ZnO substrates Citation Details In-Document Search Title: III-nitrides on oxygen- and zinc-face ZnO substrates The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and

  8. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect (OSTI)

    Kovacs, Andras; Ney, A.; Duchamp, Martial; Ney, V.; Boothroyd, Chris; Galindo, Pedro L.; Kaspar, Tiffany C.; Chambers, Scott A.; Dunin-Borkowski, Rafal

    2013-12-23

    We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

  9. Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic Hybrid Thermoelectrics Demonstrates self-catalytic schemes for large-scale synthesis of compound semiconductor ...

  10. Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement

    SciTech Connect (OSTI)

    Sharma, Vinay, E-mail: winn201@gmail.com; Rajaura, Rajveer Singh, E-mail: winn201@gmail.com [Centre for Converging Technologies, University of Rajasthan, Jaipur - 302004 (India); Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K. [Department of Physics, Thin Film and Membrane Science Lab., University of Rajasthan, Jaipur - 302004 (India); Sharma, S. S. [Department of Physics, Govt. Women Engineering College, Ajmer- 305002 (India)

    2014-04-24

    Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

  11. Visible light photocatalytic property of Zn doped V{sub 2}O{sub 5} nanoparticles

    SciTech Connect (OSTI)

    Suresh, R.; Giribabu, K.; Vijayalakshmi, L.; Stephen, A.; Narayanan, V.

    2012-06-05

    The Zn doped V{sub 2}O{sub 5} nanoparticles were synthesized by thermal decomposition method. The prepared samples were characterized by various techniques like Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) studies, UV-Visible spectroscopy (UV-Vis) and field emission scanning electron microscopy (FE-SEM). The photocatalytic activities of pure and Zn doped V{sub 2}O{sub 5} nanoparticles were examined based on the photodegradation of Rhodamine B (RhB). Experimental results indicated that the Zn doped V{sub 2}O{sub 5} photocatalyst (the molar ratio of V to Zn is 99: 1) exhibited maximum photocatalytic activity.

  12. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect (OSTI)

    G, Sreeja V; Anila, E. I. R, Reshmi John, Manu Punnan; V, Sabitha P; Radhakrishnan, P.

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  13. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect (OSTI)

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  14. Green synthesis of graphene nanosheets/ZnO composites and electrochemical properties

    SciTech Connect (OSTI)

    Wang Jun; Gao Zan; Li Zhanshuang; Wang Bin; Yan Yanxia; Liu Qi; Mann, Tom; Zhang Milin; Jiang Zhaohua

    2011-06-15

    A green and facile approach was demonstrated to prepare graphene nanosheets/ZnO (GNS/ZnO) composites for supercapacitor materials. Glucose, as a reducing agent, and exfoliated graphite oxide (GO), as precursor, were used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials. The small ZnO particles successfully anchored onto graphene sheets as spacers to keep the neighboring sheets separate. The electrochemical performances of these electrodes were analyzed by cyclic voltammetry, electrochemical impedance spectrometry and chronopotentiometry. Results showed that the GNS/ZnO composites displayed superior capacitive performance with large capacitance (62.2 F/g), excellent cyclic performance, and maximum power density (8.1 kW/kg) as compared with pure graphene electrodes. Our investigation highlight the importance of anchoring of small ZnO particles on graphene sheets for maximum utilization of electrochemically active ZnO and graphene for energy storage application in supercapacitors. - Graphical abstract: Glucose was used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials for supercapacitor. Results showed that the composites have superior capacitive performance. Highlights: > Graphene nanosheets were synthesized via using glucose as a reducing agent. > The reductant and the oxidized product are environmentally friendly. > ZnO grew onto conducting graphene sheets keeping neighboring sheets separate. > The structure improves the contact between the electrode and the electrolyte. > Results showed that these composites have good electrochemical property.

  15. Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radiation Lightsource Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films

  16. Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

    SciTech Connect (OSTI)

    Gu, Tingkun

    2014-05-28

    The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab.

  17. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    SciTech Connect (OSTI)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-05-15

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter {approx} 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: Black-Right-Pointing-Pointer The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. Black-Right-Pointing-Pointer ZnO and Ni doped ZnO nanorods Black-Right-Pointing-Pointer Ferromagnetism at room temperature.

  18. Controlled fabrication and tunable photoluminescence properties of Mn{sup 2+} doped grapheneZnO composite

    SciTech Connect (OSTI)

    Luan, Xinglong; Zhang, Yihe Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

    2014-11-15

    Highlights: GrapheneZnO composites were synthesized by a mixed solvothermal method. ZnO quantum dots are distributed uniformly on the graphene sheets. A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. Mn{sup 2+} doped grapheneZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: GrapheneZnO composites (GZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize GZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn{sup 2+} ions dopes GZnO successfully by the mixed solvothermal synthesis and the doping of Mn{sup 2+} makes GZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn{sup 2+} make GZnO have tunable photoluminescence spectrum which is desirable for practical applications.

  19. Structural Stability and Defect Energetics of ZnO from Diffusion Quantum Monte Carlo

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Santana Palacio, Juan A; Krogel, Jaron T; Kim, Jeongnim; Kent, Paul R; Reboredo, Fernando A

    2015-01-01

    We have applied the many-body ab-initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure, and the energetics of the oxygen vacancy, zinc interstitial and hydrogen impurities in ZnO. We show that DMC is an accurate and practical method that can be used to characterize multiple properties of materials that are challenging for density functional theory approximations. DMC agrees with experimental measurements to within 0.3 eV, including the band-gap of ZnO, the ionization potential of O and Zn, and the atomization energy of O2, ZnO dimer, and wurtzite ZnO. DMC predicts the oxygen vacancy asmore » a deep donor with a formation energy of 5.0(2) eV under O-rich conditions and thermodynamic transition levels located between 1.8 and 2.5 eV from the valence band maximum. Our DMC results indicate that the concentration of zinc interstitial and hydrogen impurities in ZnO should be low under n-type, and Zn- and H-rich conditions because these defects have formation energies above 1.4 eV under these conditions. Comparison of DMC and hybrid functionals shows that these DFT approximations can be parameterized to yield a general correct qualitative description of ZnO. However, the formation energy of defects in ZnO evaluated with DMC and hybrid functionals can differ by more than 0.5 eV.« less

  20. Structural Phase Transition in AuZn Alloys

    SciTech Connect (OSTI)

    Winn,B.L.; Shapiro, S.M.; Lashley, J.C.; Opeil, C.; Ratcliff, W.

    2009-05-03

    AuxZn1-x alloys undergo a shape memory martensitic transformation whose temperature and nature (continuous or discontinuous) is strongly composition dependent. Neutron diffraction experiments were performed on single crystals of x=50 and 52 to explore the structural changes occurring at the transition temperature. A transverse modulation with wavevector q0=(1/3,1/3,0) develops below the transition temperature, with no observable change in lattice parameter. However, the Bragg peak width shows a broadening suggesting an unresolved rhombohedral distortion similar to what has been observed in NiTi-Fe alloys.

  1. Fine structure on the green band in ZnO

    SciTech Connect (OSTI)

    Reynolds, D. C.; Look, D. C.; Jogai, B.

    2001-06-01

    An emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no matter what growth technique is used. Sometimes this band includes fine structure, which consists mainly of doublets, repeated with a longitudinal-optical-phonon-energy spacing (72 meV). We have developed a vibronic model for the green band, based on transitions from two separate shallow donors to a deep acceptor. The donors, at energies 30 and 60 meV from the conduction-band edge, respectively, are also found from Hall-effect measurements. {copyright} 2001 American Institute of Physics.

  2. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect (OSTI)

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  3. Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; Bahr, David F.

    2015-03-28

    The mechanical properties, thermal stability, and electrical performance of Au–ZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 °C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanicalmore » softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 1–2% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 nΩ-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardness–resistivity relationship that is relatively independent of the particular ODS chemistry.« less

  4. Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

    SciTech Connect (OSTI)

    Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; Bahr, David F.

    2015-03-28

    The mechanical properties, thermal stability, and electrical performance of AuZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanical softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 12% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 n?-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardnessresistivity relationship that is relatively independent of the particular ODS chemistry.

  5. Hierarchical Ag/ZnO micro/nanostructure: Green synthesis and enhanced photocatalytic performance

    SciTech Connect (OSTI)

    Gao, Shuyan; Jia, Xiaoxia; Yang, Shuxia; Li, Zhengdao; Jiang, Kai

    2011-04-15

    Ag/ZnO metal-semiconductor nanocomposites with hierarchical micro/nanostructure have been prepared by the hydrothermal synthesis in the presence of bovine serum albumin (BSA). The results suggest that this biomolecule-assisted hydrothermal method is an efficient route for the fabrication of Ag/ZnO nanocomposites by using BSA both a shape controller and a reducing agent of Ag{sup +} ions. Moreover, Ag nanoparticles on the ZnO act as electron sinks, improving the separation of photogenerated electrons and holes, increasing the surface hydroxyl contents of ZnO, facilitating trapping the photoinduced electrons and holes to form more active hydroxyl radicals, and thus, enhancing the photocatalytic efficiency of ZnO. This is a good example for the organic combination of green chemistry and functional materials. -- Graphical Abstract: A green strategy is report to construct Ag/ZnO metal-semiconductor nanocomposites with hierarchical micro/nanostructure and enhanced photocatalytic activity. Display Omitted Research highlights: > Hierarchical micro/nanostructured Ag/ZnO nanocomposites have been prepared via a green route. > Ag nanoparticles improve the separation of photogenerated electrons and holes. > This facilitates trapping the photoinduced electrons and holes to form more hydroxyl radicals. Therefore, it enhances the photocatalytic efficiency of ZnO.

  6. Optical characteristics of ZnO single crystal grown by the hydrothermal method

    SciTech Connect (OSTI)

    Chen, G. Z.; Yin, J. G. E-mail: yjg@siom.ac.cn; Zhang, L. H.; Zhang, P. X.; Wang, X. Y.; Liu, Y. C.; Zhang, C. L.; Gu, S. L.; Hang, Y.

    2015-12-15

    ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different ambient gases. It is suggested that the green emission may originate from defects related to copper in our samples.

  7. Mid-Gap Electronic States in Zn1 xMnxO

    SciTech Connect (OSTI)

    Johnson, Claire A.; Kittilstved, Kevin R.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2010-09-02

    Electronic absorption, magnetic circular dichroism, photoconductivity, and valence-band X-ray photoelectron (XPS) spectroscopic measurements were performed on epitaxial Zn1 xMnxO films to investigate the origin of the new mid-gap band that appears upon introduction of Mn2+ into the ZnO lattice. Absorption and MCD spectroscopies reveal Mn2+-related intensity at energies below the first excitonic transition of ZnO, tailing well into the visible energy region, with an onset at ~2.2 eV. Photoconductivity measurements show that excitation into this visible band generates mobile charge carriers, consistent with assignment as a Mn2+/3+ photoionization transition. XPS measurements reveal the presence of occupied Mn2+ levels just above the valence-band edge, supporting this assignment. Magnetic circular dichroism measurements additionally show a change in sign and large increase in magnitude of the excitonic Zeeman splitting in Zn1 xMnxO relative to ZnO, suggesting that sp-d exchange in Zn1 xMnxO is not as qualitatively different from those in other II-VI diluted magnetic semiconductors as has been suggested. The singular electronic structure feature of Zn1 xMnxO is its Mn2+/3+ ionization level within the gap, and the influence of this level on other physical properties of Zn1 xMnxO is discussed.

  8. Degradation of ZnO Window Layer for CIGS by Damp-Heat Exposure: Preprint

    SciTech Connect (OSTI)

    Pern, F.J.; To, B.; DeHart, C.; Li, X.; Glick, S. H.; Noufi, R.

    2008-08-01

    This paper summarizes our work with more details and an emphasis on the DH-induced degradation of Al-doped ZnO and Zn1-xMgxO alloys. The other two TCOs, ITO and F:SnO2, are not included here.

  9. Facile synthesis of pompon-like ZnO-Ag nanocomposites and their enhanced photocatalytic performance

    SciTech Connect (OSTI)

    Cheng, Yang; An, Liang; Lan, Jing; Gao, Fang; Tan, Ruiqin; Li, Xiao-min; Wang, Guang-hui

    2013-10-15

    Graphical abstract: - Highlights: Pompon-like ZnO-Ag was prepared via heterothermal and photodeposition method. Pompon-like ZnO-Ag is a excellent photocatalyst for degradation of azo dyes. The photocatalytic and wetting properties were studied upon UV irradiation. The discoloring efficiency of ZnO-Ag heterostructure toward to azo dyes is 99.1%. - Abstract: A series of pompon-like ZnO-Ag nanocomposites were prepared by hydrothermal method and photochemical deposition technique. Several characterizations indicated the successful deposition of Ag nanoparticles on ZnO. As a whole, the as-prepared composites present pompon-like nanostructures with a diameter of ?10 ?m. In detail, the nanostructural, chemical and optical properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), infrared spectroscopy (IR), ultra-visible spectra (UV). The photocatalytic degradation experiments under UV irradiation using Methyl Orange (MO) as a model dye were executed here. The relative results demonstrated that the pompon-like ZnO-Ag nanocomposite with a suitable content of Ag nanoparticles (about 4.82 wt%) has the highest photochemical activity, and the removal ratio of MO was 99.1% after 0.5 h adsorption and subsequent 2 h photodegradation processes. The excellent photocatalytic performance was attributed to the high surface areas of ZnO nanostructure and effectively separation of photo-generated charge on flower-like ZnO by employing Ag nanoparticles as a conductor.

  10. Band-gap tailoring of ZnO by means of heavy Al doping

    SciTech Connect (OSTI)

    Sernelius, B.E.; Berggren, K.; Jin, Z.; Hamberg, I.; Granqvist, C.G.

    1988-06-15

    Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

  11. Magnetic and structural properties of Zn doped MnV{sub 2}O{sub 4}

    SciTech Connect (OSTI)

    Shahi, Prashant; Shukla, K. K.; Singh, Rahul; Chatterjee, Sandip; Das, A.; Ghosh, A. K.; Nigam, A. K.

    2014-04-24

    The magnetization, Neutron diffraction and X-ray diffraction of Zn doped MnV{sub 2}O{sub 4} as a function of temperature have been measured. It has been observed, with increase of Zn the non-linear orientation of Mn spins with the V spins will decrease which effectively decrease the structural transition temperature more rapidly than Curie Temperature.

  12. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  13. SrAgZn and EuAgZn with KHg{sub 2}-type structure—Structure, magnetic properties, and {sup 151}Eu Mössbauer spectroscopy

    SciTech Connect (OSTI)

    Gerke, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver; Pöttgen, Rainer

    2013-07-15

    Samples of SrAgZn and EuAgZn were synthesized by reaction of the elements in sealed tantalum crucibles. Both structures were refined on the basis of single crystal X-ray diffractometer data: KHg{sub 2}-type, Imma, a=476.7(1), b=780.9(2), c=810.1(2) pm, R{sub 1}/wR{sub 2}=0.0189/0.0119, 381 F² values for SrAg{sub 1.12}Zn{sub 0.88} and a=474.43(9), b=760.8(2), c=799.0(2) pm, R{sub 1}/wR{sub 2}=0.0226/0.0483, 370 F² values for EuAg{sub 1.17}Zn{sub 0.83} with 13 variables per refinement. Silver and zinc are randomly distributed on the Hg position and build up three-dimensional networks. EuAgZn shows ferromagnetic ordering at 29(1) K. In the temperature range from 75 to 300 K the sample shows Curie–Weiss behaviour with μ{sub eff}=7.87(1) μ{sub B}/Eu atom and θ{sub P}=37.1(1) K, indicating divalent europium. {sup 151}Eu Mössbauer spectroscopic measurements confirmed the divalent state with an isomer shift of −9.31 mm/s at 78 K. Temperature dependent {sup 151}Eu data show first magnetic hyperfine field splitting at 25 K and a saturated magnetization of 17 T at 5.2 K. The temperature dependence can be described by an S=7/2 Brillouin function. - Graphical abstract: The near neighbor coordination of the strontium and europium atoms in SrAg{sub 1.12}Zn{sub 0.88}, EuAg{sub 1.17}Zn{sub 0.83}, and EuAuZn. - Highlights: • Synthesis of new intermetallic zinc compounds SrAgZn and EuAgZn. • Ferromagnetic ordering of EuAgZn at 29 K. • Magnetic hyperfine field splitting in the {sup 151}Eu Mössbauer spectrum.

  14. Hydrothermal synthesis of coral-like Au/ZnO catalyst and photocatalytic degradation of Orange II dye

    SciTech Connect (OSTI)

    Chen, P.K.; Lee, G.J.; Davies, S.H.; Masten, S.J.; Amutha, R.; Wu, J.J.

    2013-06-01

    Highlights: ? Coral-like Au/ZnO was successfully prepared using green synthetic method. ? Gold nanoparticles were deposited on the ZnO structure using NaBH{sub 4} and ?-D-glucose. ? Coral-like Au/ZnO exhibited superior photocatalytic activity to degrade Orange II. - Abstract: A porous coral-like zinc oxide (c-ZnO) photocatalyst was synthesized by the hydrothermal method. The coral-like structure was obtained by precipitating Zn{sub 4}(CO{sub 3})(OH){sub 6}H{sub 2}O (ZnCH), which forms nanosheets that aggregate together to form microspheres with the coral-like structure. X-ray diffraction (XRD) studies indicate that after heating at 550 C the ZnCH microspheres can be converted to ZnO microspheres with a morphology similar to that of ZnCH microspheres. Thermogravimetric analysis (TGA) shows this conversion takes place at approximately 260 C. A simple electrostatic self-assembly method has been employed to uniformly disperse Au nanoparticles (1 wt.%) on the ZnO surface. In this procedure ?-D-glucose was used to stabilize the Au nanoparticles. Scanning electron microscope images indicate that the diameter of coral-like ZnO microspheres (c-ZnO) is about 8 ?m. X-ray diffraction reveals that the ZnO is highly crystalline with a wurtzite structure and the Au metallic particles have an average size of about 13 nm. X-ray photoelectron spectroscopic (XPS) studies have confirmed the presence of ZnO and also showed that the Au is present in the metallic state. The photocatalytic degradation of Orange II dye, with either ultraviolet or visible light, is faster on Au/c-ZnO than on c-ZnO.

  15. Synthesis and characterization of novel WO{sub 3} loaded AgZnO and its photocatalytic activity

    SciTech Connect (OSTI)

    Subash, B.; Krishnakumar, B.; Pandiyan, V.; Swaminathan, M.; Shanthi, M.

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ? A novel WO{sub 3} loaded AgZnO was prepared by a simple solvothermal method. ? Ag traps the electron from both ZnO and WO{sub 3} reducing electrohole recombination. ? WO{sub 3}AgZnO is more efficient than AgZnO, WO{sub 3}ZnO, AgWO{sub 3} and undoped catalysts. ? WO{sub 3}AgZnO material will be much useful for the treatment of dye effluents. -- Abstract: A novel WO{sub 3} loaded AgZnO photocatalyst was successfully synthesized by a simple solvothermal method and characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) images, energy dispersive spectrum (EDS), diffuse reflectance spectra (DRS), photoluminescence spectra (PL), cyclic voltammetry (CV) and BrunauerEmmettTeller (BET) surface area measurements. The photocatalytic activity of WO{sub 3}AgZnO was investigated for the degradation of RR 120 and RO 4 dyes in aqueous solution using UV-A light. WO{sub 3}AgZnO is found to be more efficient than AgZnO, WO{sub 3}ZnO, AgWO{sub 3}, commercial ZnO, prepared ZnO, TiO{sub 2}-P25 and TiO{sub 2} (Merck) at neutral pH for the mineralization of dyes. First time we have reported that novel WO{sub 3} loaded AgZnO has been found to be very efficient for two azo dyes removal when compared to commercially available catalyst (Degussa P25, ZnO (Merck) and TiO{sub 2} (Merck)). The mineralization of dyes has been confirmed by chemical oxygen demand (COD) measurements. A mechanism of degradation has been proposed for the higher efficiency of WO{sub 3}AgZnO.

  16. Atomic layer deposition of zinc sulfide with Zn(TMHD){sub 2}

    SciTech Connect (OSTI)

    Short, Andrew; Jewell, Leila; Doshay, Sage; Church, Carena; Keiber, Trevor; Bridges, Frank; Carter, Sue; Alers, Glenn

    2013-01-15

    The atomic layer deposition (ALD) of ZnS films with Zn(TMHD){sub 2} and in situ generated H{sub 2}S as precursors was investigated, over a temperature range of 150-375 Degree-Sign C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

  17. Controlled etching of hexagonal ZnO architectures in an alcohol thermal process

    SciTech Connect (OSTI)

    Wu, Junshu [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China); Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

    2010-03-15

    An alcohol thermal technique was applied to the controlled growth of hexagonal ZnO architectures via selective chemical etching. ZnO microdisks were produced first under mild alcohol thermal conditions in presence of formamide. Due to a higher surface energy/atomic density of Zn{sup 2+} {l_brace}0 0 0 1{r_brace} than that of the other faces, hexagonal ZnO microring was obtained by selectively etching positive polar surface of disk-like precursor with a high density of planar defects at the center. The selective etching of ZnO is related to its crystallographic characteristics of surface polarity and chemical activities, which opens a new opportunity for the shape-controlled synthesis of wurtzite-structured materials.

  18. Polymer-ZnO nanocomposites foils and thin films for UV protection

    SciTech Connect (OSTI)

    Shanshool, Haider Mohammed; Yahaya, Muhammad; Abdullah, Ibtisam Yahya [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor (Malaysia); Yunus, Wan Mahmood Mat [Department of Physics, Faculty of Science, University Putra Malaysia, 43400 UPM, Serdang (Malaysia)

    2014-09-03

    The damage of UV radiation on human eye and skin is extensively studied. In the present work, the nanocomposites foils and thin films have been prepared by using casting method and spin coating, respectively. Nanocomposites were prepared by mixing ZnO nanoparticles with Polymethyl methacrylate (PMMA) and Polyvinylidene fluoride (PVDF) as polymer matrix. Different contents of ZnO nanoparticles were used as filler in the nanocomposites. UV-Vis spectra showed very low transmittance in UV region that decreases with increase content of ZnO. PVDF/ZnO samples showed the lowest transmittance. The rough surface of PVDF was observed from SEM image. While a homogeneous dispersion of ZnO nanoparticles in PMMA were indicated by FESEM images.

  19. Emission Properties from ZnO Quantum Dots Dispersed in SiO{sub 2} Matrix

    SciTech Connect (OSTI)

    Panigrahi, Shrabani; Basak, Durga

    2011-07-15

    Dispersion of ZnO quantum dots in SiO{sub 2} matrix has been achieved in two techniques based on StOeber method to form ZnO QDs-SiO{sub 2} nanocomposites. Sample A is formed with random dispersion by adding tetraethyl orthosilicate (TEOS) to an ethanolic solution of ZnO nanoparticles and sample B is formed with a chain-like ordered dispersion by adding ZnO nanoparticles to an already hydrolyzed ethanolic TEOS solution. The photoluminescence spectra of the as-grown nanocomposites show strong emission in the ultraviolet region. When annealed at higher temperature, depending on the sample type, these show strong red or white emission. Interestingly, when the excitation is removed, the orderly dispersed ZnO QDs-SiO{sub 2} composite shows a very bright blue fluorescence visible by naked eyes for few seconds indicating their promise for display applications.

  20. Defect-free ZnO nanorods for low temperature hydrogen sensor applications

    SciTech Connect (OSTI)

    Ranwa, Sapana; Kumar, Mahesh; Kulriya, Pawan K.; Sahu, Vikas Kumar; Kukreja, L. M.

    2014-11-24

    Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H{sub 2} sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (?21.6?s) and recovery times (?27?s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H{sub 2} sensor operates at low temperature (?70?C) unlike the existing high temperature (>150?C) sensors.

  1. Purification of CdZnTe by Electromigration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  2. Plasmonic excitations in ZnO/Ag/ZnO multilayer systems: Insight into interface and bulk electronic properties

    SciTech Connect (OSTI)

    Philipp, Martin; Knupfer, Martin; Buechner, Bernd; Gerardin, Hadia

    2011-03-15

    Electron energy-loss spectroscopy experiments in transmission were carried out on silver-based multi-layer systems, consisting of a silver layer of various thicknesses (8, 10 and 50 nm) sandwiched between two Al-doped ZnO layers. The films were produced by magnetron sputtering using potassium bromide single crystals as substrates. The electronic structure of these systems was probed and analyzed with respect to their plasmonic excitations, which can be basically split up into excitations of the electrons in the bulk silver and excitations at the ZnO:Al/Ag interface. A detailed examination of the momentum dependence of the plasmon peaks revealed a positive dispersion for both, the volume and the interface plasmon, where only for the first one a quadratic behavior (as expected for a free electron gas) could be observed. Furthermore, the peak width was analyzed and set into relation to electrical conductivity measurements by calculating the plasmon lifetime and the electron scattering rate. Here, a good agreement between these different methods was obtained.

  3. Low temperature atomic layer deposited ZnO photo thin film transistors

    SciTech Connect (OSTI)

    Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci; Biyikli, Necmi; Okyay, Ali K.; Yu, Hyun Yong

    2015-01-01

    ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250?C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80?C; I{sub on}/I{sub off} ratio is extracted as 7.8 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80?C. I{sub D}V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.

  4. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; Brown, G. M.

    2011-01-01

    The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore » significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less

  5. Modifying structure-sensitive reactions by addition of Zn to Pd

    SciTech Connect (OSTI)

    Childers, David J.; Schweitzer, Neil M.; Kamali Shahari, Seyed Mehdi; Rioux, Robert M.; Miller, Jeffrey T.; Meyer, Randall J.

    2014-10-01

    Silica-supported Pd and PdZn nanoparticles of a similar size were evaluated for neopentane hydrogenolysis/isomerization and propane hydrogenolysis/dehydrogenation. Monometallic Pd showed high neopentane hydrogenolysis selectivity. Addition of small amounts of Zn to Pd lead PdZn scatters in the EXAFS spectrum and an increase in the linear bonded CO by IR. In addition, the neopentane turnover rate decreased by nearly 10 times with little change in the selectivity. Increasing amounts of Zn lead to greater PdZn interactions, higher linear-to-bridging CO ratios by IR and complete loss of neopentane conversion. Pd NPs also had high selectivity for propane hydrogenolysis and thus were poorly selective for propylene. The PdZn bimetallic catalysts, however, were able to preferentially catalyze dehydrogenation, were not active for propane hydrogenolysis, and thus were highly selective for propylene formation. The decrease in hydrogenolysis selectivity was attributed to the isolation of active Pd atoms by inactive metallic Zn,demonstrating that hydrogenolysis requires a particular reactive ensemble whereas propane dehydrogenation does not.

  6. Ethanol Steam Reforming on Co/CeO2: The Effect of ZnO Promoter

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Wang, Yong

    2013-12-02

    A series of ZnO promoted Co/CeO2 catalysts were synthesized and characterized using XRD, TEM, H2-TPR, CO chemisorption, O2-TPO, IR-Py, and CO2-TPD. The effects of ZnO on the catalytic performances of Co/CeO2 were studied in ethanol steam reforming. It was found that the addition of ZnO facilitated the oxidation of Co0 via enhanced oxygen mobility of the CeO2 support which decreased the activity of Co/CeO2 in C–C bond cleavage of ethanol. 3 wt% ZnO promoted Co/CeO2 exhibited minimum CO and CH4 selectivity and maximum CO2 selectivity. This resulted from the combined effects of the following factors with increasing ZnO loading: (1) enhanced oxygen mobility of CeO2 facilitated the oxidation of CHx and CO to form CO2; (2) increased ZnO coverage on CeO2 surface reduced the interaction between CHx/CO and Co/CeO2; and (3) suppressed CO adsorption on Co0 reduced CO oxidation rate to form CO2. In addition, the addition of ZnO also modified the surface acidity and basicity of CeO2, which consequently affected the C2–C4 product distributions.

  7. High electron mobility ZnO film for high-performance inverted polymer solar cells

    SciTech Connect (OSTI)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng Ding, Kai

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  8. Performance evaluation of ZnO–CuO hetero junction solid state room temperature ethanol sensor

    SciTech Connect (OSTI)

    Yu, Ming-Ru; Suyambrakasam, Gobalakrishnan; Wu, Ren-Jang; Department of Nanotechnology, School of Interdisciplinary Courses, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629180, Tamil Nadu ; Chavali, Murthy; Department of Applied Chemistry, Providence University, 200 Chungchi Road, Shalu, Taichung Hsien 433, Taiwan, R.O.C

    2012-07-15

    Graphical abstract: Sensor response (resistance) curves of time were changed from 150 ppm to 250 ppm alcohol concentration of ZnO–CuO 1:1. The response and recovery times were measured to be 62 and 83 s, respectively. The sensing material ZnO–CuO is a high potential alcohol sensor which provides a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature. Highlights: ► The main advantages of the ethanol sensor are as followings. ► Novel materials ZnO–CuO ethanol sensor. ► The optimized ZnO–CuO hetero contact system. ► A good sensor response and room working temperature (save energy). -- Abstract: A semiconductor ethanol sensor was developed using ZnO–CuO and its performance was evaluated at room temperature. Hetero-junction sensor was made of ZnO–CuO nanoparticles for sensing alcohol at room temperature. Nanoparticles were prepared by hydrothermal method and optimized with different weight ratios. Sensor characteristics were linear for the concentration range of 150–250 ppm. Composite materials of ZnO–CuO were characterized using X-ray diffraction (XRD), temperature-programmed reduction (TPR) and high-resolution transmission electron microscopy (HR-TEM). ZnO–CuO (1:1) material showed maximum sensor response (S = R{sub air}/R{sub alcohol}) of 3.32 ± 0.1 toward 200 ppm of alcohol vapor at room temperature. The response and recovery times were measured to be 62 and 83 s, respectively. The linearity R{sup 2} of the sensor response was 0.9026. The sensing materials ZnO–CuO (1:1) provide a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature.

  9. H2S removal with ZnO during fuel processing for PEM fuel cell applications

    SciTech Connect (OSTI)

    Li, Liyu; King, David L.

    2006-09-15

    The possibility of using ZnO as a H2S absorbent to protect catalysts in the gasoline and diesel fuel processor for PEM fuel cell applications was studied. It is possible to use commercial ZnO absorbent as a guard bed to protect the PROX catalyst and PEM fuel cell. However, it is not feasible to use ZnO to protect high and low temperature WGS catalysts, most likely due to COS formation via reactions CO + H2S = COS + H2 and CO2 + H2S = COS + H2O.

  10. Phosphorescence quenching by mechanical stimulus in CaZnOS:Cu

    SciTech Connect (OSTI)

    Tu, Dong; Kamimura, Sunao; Xu, Chao-Nan; Fujio, Yuki; Sakata, Yoshitaro; Ueno, Naohiro

    2014-07-07

    We have found that phosphorescence intensity of CaZnOS:Cu decreased visibly under an applied load. This mechanical quenching (MQ) of phosphorescence in CaZnOS:Cu corresponded to the mechanical stimuli. We have thus demonstrated that the MQ of CaZnOS:Cu could be used for visualizing stress distributions in practical applications. We propose that MQ arises from non-radiative recombination due to electron-transfer from trap levels to non-radiative centers as a result of the mechanical load.

  11. Luminescent properties of solution-grown ZnO nanorods. (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Luminescent properties of solution-grown ZnO nanorods. Citation Details In-Document Search Title: Luminescent properties of solution-grown ZnO nanorods. The optical properties of solution-grown ZnO nanorods were investigated using photoluminescence and cathodoluminescence. The as-grown nanorods displayed a broad yellow-orange sub-band-gap luminescence and a small near-band-gap emission peak. The sub-band-gap luminescence can only be observed when exciting above band gap.

  12. Magnetism of Co doped ZnO with Al codoping: carrier induced mechanisms versus extrinsic origins

    SciTech Connect (OSTI)

    Ney, A.; Ney, V.; Ye, S.; Ollefs, K.; Kammermeier, T.; Kaspar, Tiffany C.; Chambers, Scott A.; Wilhelm, F.; Rogalev, A.

    2010-07-23

    Dilute magnetic semiconductors (DMS) which exhibit ferromagnetism (FM) at and above room temperature are a highly desirable class of materials for future spin- tronics devices. Zn1?xCoxO (Co:ZnO) is a heavily studied DMS material in this context. Although controversially discussed in the literature, there is a growing con- sensus, that phase-pure Co:ZnO is paramagnetic (PM)[13]. Altering the preparation conditions can easily lead to phase separation and consequently superparam- agnetism (SPM) [3]. Nonetheless there are recent experimental data claiming that FM can be switched on inCo:ZnO by controlling the carrier concentration [4]. On the other hand, no FM was found in structurally excellent Al-codoped Co:ZnO [5]. However, in the latter work the magnetic characterization was restricted to room temperature measurements. In parallel, theory has also revealed that defect-free, insulating Co:ZnO is not ferromagnetic [6, 7] whereas the role of n-type carriers remains under debate, ranging from ferromagnetic coupling [8], or oscil- latory behavior with Co-Co distance [9] to antiferromagnetic coupling [10]. It is rather common to manipulate the n-type carrier concentration of ZnO by Al-doping to yield high conductivity [4, 11]. On the other hand, it had been shown that Al-codoping of Co:ZnO may promote the onset of phase separation [11]. It is extremely difficult to detect such secondary Co-containing phases even with the most careful x-ray diffraction (XRD) analysis [11, 12] or depth-profiling photoelectron spectroscopy (DP-XPS) [13]. Such careful materials characterization is lacking in Ref. [4]. An alternative to extensive XRD or DP-XPS to look for potential phase separation in Co:ZnO is the combination of x-ray absorption near edge spectra (XANES), x-ray linear dichroism (XLD), and x-ray magnetic circular dichroism (XMCD). This suite of atom-specific x-ray spectroscopies nicely complements integral superconducting quantum interference device (SQUID) magnetometry. For example, combined XLD simulations and experiments at the Co K-edge have been used to verify the phase purity of Co:ZnO [2] and characteristic spectroscopic signatures with appropriate quality thresholds for PM and SPM have been identified recently in the XANES and XMCD at the Co K-edge of Co:ZnO [3]. Along the same line, a careful combination of XANES and extended x-ray absorption fine structure (EXAFS) was employed to study Co:ZnO films similar to those in [4] which found evidence for Co(0) secondary phases [14].

  13. Yb-Zn-Al ternary system: CaCu{sub 5}-type derived compounds in the

    Office of Scientific and Technical Information (OSTI)

    zinc-rich corner (Journal Article) | SciTech Connect Yb-Zn-Al ternary system: CaCu{sub 5}-type derived compounds in the zinc-rich corner Citation Details In-Document Search Title: Yb-Zn-Al ternary system: CaCu{sub 5}-type derived compounds in the zinc-rich corner As part of a study of the Yb-Zn-Al system, this first article reports the synthesis and crystal structure of four compounds. The crystal structures were determined by single crystal diffractometer data for three of them: Yb{sub

  14. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect (OSTI)

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  15. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect (OSTI)

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  16. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Srinet, Gunjan Kumar, Ravindra Sajal, Vivek

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  17. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

    SciTech Connect (OSTI)

    Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

    2011-03-07

    Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K{sub {alpha}} (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

  18. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  19. X-ray absorption studies of mixed salt polymer electrolytes: ZnBr{sub 2}/CaBr{sub 2}-PEO, ZnBr{sub 2}/LiBr-PEO, and ZnBr{sub 2}/RbBr-PEO complexes

    SciTech Connect (OSTI)

    McBreen, J.; Yang, X.Q.; Lee, H.S.; Okamoto, Y.

    1995-02-01

    Polyethylene oxide (PEO)-salt systems are an important new class of electrolytes that are being considered for many uses. X-ray absorption (XAS) studies of ZnBr{sub 2}-PEO complexes, at the Zn K edge, at temperatures between 25 and 120 C, indicate that additions of bromide salts of Li, Rb, or Ca result in the formation of ZnBr{sub 4}{sup {minus} 2} complexes with a Zn-Br bond length of 2.42 {angstrom}. XAS, at the Rb K edge, in mixed RbBr/ZnBr{sub 2}-PEO complexes with an excess of ZnBr{sub 2}, shows that the ZnBr{sub 2} causes the RbBr to dissolve in the polymer. The Rb{sup +} ions are weakly complexed with the PEO with an Rb-O bond distance of 2.93 {angstrom}.

  20. Coulomb Excitation of Neutron-Rich Zn Isotopes: First Observation of the 2{sub 1}{sup +} State in {sup 80}Zn

    SciTech Connect (OSTI)

    Van de Walle, J.; Cocolios, T. E.; Huyse, M.; Ivanov, O.; Mayet, P.; Raabe, R.; Sawicka, M.; Stefanescu, I.; Duppen, P. van; Aksouh, F.; Behrens, T.; Gernhauser, R.; Kroell, T.; Kruecken, R.; Bildstein, V.; Blazhev, A.; Eberth, J.

    2007-10-05

    Neutron-rich, radioactive Zn isotopes were investigated at the Radioactive Ion Beam facility REX-ISOLDE (CERN) using low-energy Coulomb excitation. The energy of the 2{sub 1}{sup +} state in {sup 78}Zn could be firmly established and for the first time the 2{sup +}{yields}0{sub 1}{sup +} transition in {sup 80}Zn was observed at 1492(1) keV. B(E2,2{sub 1}{sup +}{yields}0{sub 1}{sup +}) values were extracted for {sup 74,76,78,80}Zn and compared to large scale shell model calculations. With only two protons outside the Z=28 proton core, {sup 80}Zn is the lightest N=50 isotone for which spectroscopic information has been obtained to date. Two sets of advanced shell model calculations reproduce the observed B(E2) systematics. The results for N=50 isotones indicate a good N=50 shell closure and a strong Z=28 proton core polarization. The new results serve as benchmarks to establish theoretical models, predicting the nuclear properties of the doubly magic nucleus {sup 78}Ni.

  1. Imaging and characterization of piezoelectric potential in a single bent ZnO microwire

    SciTech Connect (OSTI)

    Wang, Chiang-Lun; Chen, Jhih-Wei; Chen, Yi-Chun; Wu, Chung-Lin; Tsai, Shu-Ju; Lin, Kai-Hsiang; Hsu, Hsu-Cheng

    2014-09-22

    We achieved direct visualization of the piezoelectric potentials in a single bent ZnO microwire (MW) using focused synchrotron radiation (soft x-ray) scanning photoelectron spectro-microscopy. Using radial-line scan across the bent section of ZnO MW, the characteristic core-level shifts were directly related to the spatial distribution of piezoelectric potentials perpendicular to the ZnO polar direction. Using piezoelectric modeling in ZnO, we delineated the band structure distortion and carrier concentration change from tensile to compressed sides by combining the spatial resolved cathodoluminescence characteristics in an individual microwire. This spectro-microscopic technique allows imaging and identification of the electric-mechanical couplings in piezoelectric micro-/nano-wire systems.

  2. Determination of the spontaneous polarization of wurtzite (Mg,Zn)O

    SciTech Connect (OSTI)

    Stölzel, Marko Müller, Alexander; Benndorf, Gabriele; Lorenz, Michael; Grundmann, Marius; Patzig, Christian; Höche, Thomas

    2014-05-12

    We report on the experimental determination of the spontaneous polarization of wurtzite-(Mg,Zn)O by examination of the recombination dynamics of polar ZnO/(Mg,Zn)O quantum wells (QWs). The thickness-dependent decay time of the unscreened single-exciton states inside the QWs was modeled by a self-consistent solution of Schrödinger- and Poisson-equation to deduce the total polarization across the QW for different Mg-contents inside the barriers. By the separation of the piezoelectric components of the polarization, a linear increase in spontaneous polarization with increasing Mg-content x of P/x = (0.151 ± 0.015) C/m{sup 2} was determined for Mg{sub x} Zn{sub 1−x} O.

  3. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-11-17

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application ofmore » infiltration synthesis in fabricating metal oxide electronic devices.« less

  4. Local structures of copper-doped ZnO films (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Local structures of copper-doped ZnO films Authors: Ma, Q. ; Buchholz, D.B. ; Chang, R.P.H. 1 + Show Author Affiliations (NWU) ...

  5. Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub

    Office of Scientific and Technical Information (OSTI)

    3}Ti{sub 4}O{sub 12}(CCTO) Ceramics (Journal Article) | SciTech Connect Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub 3}Ti{sub 4}O{sub 12}(CCTO) Ceramics Citation Details In-Document Search Title: Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub 3}Ti{sub 4}O{sub 12}(CCTO) Ceramics Effects of Zn and Cr substitutions on dielectric properties of CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12} ceramics are reported. Dielectric measurements at room

  6. Structural Studies of Al:ZnO Powders and Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film...

  7. Synthesis of ZnO decorated graphene nanocomposite for enhanced photocatalytic properties

    SciTech Connect (OSTI)

    Gayathri, S.; Jayabal, P.; Kottaisamy, M.; Ramakrishnan, V.

    2014-05-07

    Zinc oxide/Graphene (GZ) composites with different concentrations of ZnO were successfully synthesized through simple chemical precipitation method. The X-ray diffraction pattern and the micro-Raman spectroscopic technique revealed the formation of GZ composite, and the energy dispersive X-ray spectrometry analysis showed the purity of the prepared samples. The ZnO nanoparticles decorated graphene sheets were clearly visible in the field emission scanning electron micrograph. Raman mapping was employed to analyze the homogeneity of the prepared samples. The diffuse-reflectance spectra clearly indicated that the formation of GZ composites promoted the absorption in the visible region also. The photocatalytic activity of ZnO and GZ composites was studied by the photodegradation of Methylene blue dye. The results revealed that the GZ composites exhibited a higher photocatalytic activity than pristine ZnO. Hence, we proposed a simple wet chemical method to synthesize GZ composite and its application on photocatalysis was demonstrated.

  8. Response-time improved hydrothermal-method-grown ZnO scintillator...

    Office of Scientific and Technical Information (OSTI)

    Response-time improved hydrothermal-method-grown ZnO scintillator for soft x-ray free-electron laser timing-observation Citation Details In-Document Search Title: Response-time...

  9. PEDOT-PSS coated ZnO/C hierarchical porous nanorods as ultralong...

    Office of Scientific and Technical Information (OSTI)

    PEDOT-PSS coated ZnOC hierarchical porous nanorods as ultralong-life anode material for lithium ion batteries This content will become publicly available on November 16, 2017 ...

  10. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    SciTech Connect (OSTI)

    Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-11-17

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.

  11. Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

    SciTech Connect (OSTI)

    Grinblat, Gustavo; Comedi, David; Bern, Francis; Barzola-Quiquia, Jos; Esquinazi, Pablo; Tirado, Mnica

    2014-03-10

    To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1?V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.

  12. Single-valley quantum Hall ferromagnet in a dilute MgxZn1-xO/ZnO strongly correlated two-dimensional electron system

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kozuka, Y.; Tsukazaki, A.; Maryenko, D.; Falson, J.; Bell, C.; Kim, M.; Hikita, Y.; Hwang, H. Y.; Kawasaki, M.

    2012-02-03

    We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the MgxZn1-xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates thatmore » the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.« less

  13. Characterization of Aerosols Containing Zn, Pb, and Cl from an Industrial Region of Mexico City

    SciTech Connect (OSTI)

    Moffet, Ryan C.; Desyaterik, Yury; Hopkins, Rebecca J.; Tivanski, Alexei V.; Gilles, Marry K.; Wang, Yan A.; Shutthanandan, V.; Molina, Luisa T.; Abraham, Rodrigo G.; Johnson, Kirsten S.; Mugica, Violeta; Molina, Mario J.; Laskin, Alexander; Prather, Kimberly A.

    2008-10-01

    During the March, 2006 MILAGRO campaign, measurements in the Northern Mexico City Metropolitan Area revealed the frequent appearance of particles with a characteristically high content of internally mixed Zn, Pb, Cl, and P. A comprehensive study of the chemical and physical properties of these particles was performed using a complementary combination of aerosol measurement techniques. Individual particles were analyzed using Aerosol Time-of-Flight Mass Spectrometry (ATOFMS) and Computer Controlled Scanning Electron Microscopy/Energy Dispersive X-Ray spectroscopy (CCSEM/EDX). Proton Induced X-Ray Emission (PIXE) analysis of bulk aerosol samples provided time-resolved mass concentrations of individual elements. The PIXE measurements indicated that Zn is more strongly correlated with Cl than with any other element and that Zn concentrations are higher than other non-ferrous transition metals. The Zn- and Pb - containing particles have both spherical and non-spherical morphologies. Many metal rich particles had needle-like structures and were found to be composed of ZnO and/or Zn(NO3)2?6H2O as indicated by scanning transmission x-ray microscopy/near edge X-ray absorption spectroscopy (STXM/NEXAFS). The Zn and Pb rich particles were primarily in the submicron size range and internally mixed with elemental carbon. The unique chemical associations most closely match signatures acquired for garbage incineration. This unique combination of complementary analytical techniques has allowed for a comprehensive evaluation of Zn- and Pb- containing particles in a complex urban environment, highlighting unique characteristics that give powerful insight into their origin.

  14. Self-assembled ultra small ZnO nanocrystals for dye-sensitized solar cell application

    SciTech Connect (OSTI)

    Patra, Astam K.; Dutta, Arghya; Bhaumik, Asim

    2014-07-01

    We demonstrate a facile chemical approach to produce self-assembled ultra-small mesoporous zinc oxide nanocrystals using sodium salicylate (SS) as a template under hydrothermal conditions. These ZnO nanomaterials have been successfully fabricated as a photoanode for the dye-sensitized solar cell (DSSC) in the presence of N719 dye and iodinetriiodide electrolyte. The structural features, crystallinity, purity, mesophase and morphology of the nanostructure ZnO are investigated by several characterization tools. N{sub 2} sorption analysis revealed high surface areas (203 m{sup 2} g{sup ?1}) and narrow pore size distributions (5.15.4 nm) for different samples. The mesoporous structure and strong photoluminescence facilitates the high dye loading at the mesoscopic void spaces and light harvesting in DSSC. By utilizing this ultra-small ZnO photoelectrode with film thickness of about 7 ?m in the DSSC with an open-circuit voltage (V{sub OC}) of 0.74 V, short-circuit current density (J{sub SC}) of 3.83 mA cm{sup ?2} and an overall power conversion efficiency of 1.12% has been achieved. - Graphical abstract: Ultra-small ZnO nanocrystals have been synthesized with sodium salicylate as a template and using it as a photoanode in a dye-sensitized solar cell 1.12% power conversion efficiency has been observed. - Highlights: Synthesis of self-assembled ultra-small mesoporous ZnO nanocrystals by using sodium salicylate as a template. Mesoporous ZnO materials have high BET surface areas and void space. ZnO nanoparticles serve as a photoanode for the dye-sensitized solar cell (DSSC). Using ZnO nanocrystals as photoelectrode power conversion efficiency of 1.12% has been achieved.

  15. Piezoelectric and luminescent properties of ZnO nanostructures on Ag films.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Piezoelectric and luminescent properties of ZnO nanostructures on Ag films. Citation Details In-Document Search Title: Piezoelectric and luminescent properties of ZnO nanostructures on Ag films. No abstract prepared. Authors: Tallant, David Robert ; Missert, Nancy A. ; Scrymgeour, David ; Voigt, James A. ; Liu, J. [1] ; Hsu, Julia, W. P. + Show Author Affiliations (.) Publication Date: 2006-11-01 OSTI Identifier: 898423 Report Number(s):

  16. Thin-film polycrystalline n-ZnO/p-CuO heterojunction

    SciTech Connect (OSTI)

    Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. Terukov, E. I.

    2009-06-15

    Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

  17. Low-temperature aqueous-phase reforming of ethanol on bimetallic PdZn catalysts

    SciTech Connect (OSTI)

    Xiong, Haifeng; DelaRiva, Andrew; Wang, Yong; Dayte, Abhaya

    2015-01-01

    Bimetallic PdZn catalysts supported on carbon black (CB) and carbon nanotubes (CNTs) were found to be selective for CO-free H-2 production from ethanol at low temperature (250 degrees C). On Pd, the H-2 yield was low (similar to 0.3 mol H-2/mol ethanol reacted) and the CH4/CO2 ratio was high (similar to 1.7). Addition of Zn to Pd formed the intermetallic PdZn beta phase (atomic ratio of Zn to Pd is 1) with increased H-2 yield (similar to 1.9 mol H-2/mol ethanol reacted) and CH4/CO2 ratio of <1. The higher H-2 yield and low CH4 formation was related to the improved dehydrogenation activity of the L1(0) PdZn beta phase. The TOF increased with particle size and the CNTs provided the most active and selective catalysts, which may be ascribed to pore-confinement effects. Furthermore, no significant changes in either the supports or the PdZn beta particles was found after aqueous-phase reforming (APR) indicating that the metal nanoparticles and the carbon support are hydrothermally stable in the aqueous phase at elevated temperatures and pressures (>200 degrees C, 65 bar). No CO was detected for all the catalysts performed in aqueous-phase reaction, indicating that both monometallic Pd and bimetallic PdZn catalysts have high water-gas shift activity during APR. However, the yield of H-2 is considerably lower than the theoretical value of 6 H-2 per mole ethanol which is due to the presence of oxygenated products and methane on the PdZn catalysts.

  18. Zn speciation in a soil contaminated by the deposition of a dredged sediment by synchrotron X-ray techniques

    SciTech Connect (OSTI)

    Isaure, Marie-Pierre; Manceau, Alain; Laboudigue, Agnes; Tamura, Nobumichi; Marcus, Matthew A.

    2003-09-01

    The nature and proportion of Zn species present in an agricultural soil overlaid by a dredged contaminated sediment have been untangled by the novel combination of three non-invasive synchrotron-based x-ray techniques: x-ray microfluorescence ({mu}SXRF), microdiffraction ({mu}XRD), and absorption spectroscopy (EXAFS). One primary (franklinite) and two secondary (phyllomanganate and phyllosilicate) Zn-containing minerals were identified in the initial soil, and another primary (ZnS) and a new secondary (Fe-(oxyhydr)oxide) Zn species in the covered soil. The quantitative analysis of EXAFS spectra recorded on bulk samples indicated that ZnS and Zn-Fe (oxyhydr)oxides amounted to 71+-10 percent and 27+-10 percent, respectively, and the other Zn species to less than 10 percent. The two new Zn species found in the covered soil result from the gravitational migration of ZnS particles initially present in the sediment, and from their further oxidative dissolution and fixation of leached Zn on F e (oxyhydr) oxides.

  19. Determination of reactive oxygen species from ZnO micro-nano structures with shape-dependent photocatalytic activity

    SciTech Connect (OSTI)

    He, Weiwei; Zhao, Hongxiao; Jia, Huimin; Yin, Jun-Jie; Zheng, Zhi

    2014-05-01

    Graphical abstract: ZnO micro/nano structures with shape dependent photocatalytic activity were prepared by hydrothermal reaction. The generations of hydroxyl radical, superoxide and singlet oxygen from irradiated ZnO were identified precisely by electron spin resonance spectroscopy. The type of reactive oxygen species was determined by band gap structure of ZnO. - Highlights: ZnO micro/nano structures with different morphologies were prepared by solvothermal reaction. Multi-pod like ZnO structures exhibited superior photocatalytic activity. The generations of hydroxyl radical, superoxide and singlet oxygen from irradiated ZnO were characterized precisely by electron spin resonance spectroscopy. The type of reactive oxygen species was determined by band gap structure of ZnO. - Abstract: ZnO micro/nano structures with different morphologies have been prepared by the changing solvents used during their synthesis by solvothermal reaction. Three typical shapes of ZnO structures including hexagonal, bell bottom like and multi-pod formed and were characterized by scanning electron microscopy and X-ray diffraction. Multi pod like ZnO structures exhibited the highest photocatalytic activity toward degradation of methyl orange. Using electron spin resonance spectroscopy coupled with spin trapping techniques, we demonstrate an effective way to identify precisely the generation of hydroxyl radicals, superoxide and singlet oxygen from the irradiated ZnO multi pod structures. The type of reactive oxygen species formed was predictable from the band gap structure of ZnO. These results indicate that the shape of micro-nano structures significantly affects the photocatalytic activity of ZnO, and demonstrate the value of electron spin resonance spectroscopy for characterizing the type of reactive oxygen species formed during photoexcitation of semiconductors.

  20. Effects of hydrogen on the optical properties of ZnCdO/ZnO quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Buyanova, I. A.; Wang, X. J.; Chen, W. M.; Pozina, G.; Lim, W.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W.; Hertog, B.

    2008-06-30

    Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO/ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of {sup 2}H from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

  1. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

    SciTech Connect (OSTI)

    Khan, Azam Edberg, Jesper; Nur, Omer; Willander, Magnus

    2014-07-21

    In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

  2. Facile combustion synthesis of ZnO nanoparticles using Cajanus cajan (L.) and its multidisciplinary applications

    SciTech Connect (OSTI)

    Manjunath, K.; Ravishankar, T.N.; Kumar, Dhanith; Priyanka, K.P; Varghese, Thomas; Naika, H.Raja; Nagabhushana, H.; Sharma, S.C.; Dupont, J.; Ramakrishnappa, T.; Nagaraju, G.

    2014-09-15

    Graphical abstract: Facile combustion synthesis of ZnO nanoparticles using Cajanuscajan (L.) and its multidisciplinary applications.Zinc oxide nanoparticles were successfully synthesized by solution combustion method (SCM) using pigeon pea as a combustible fuel for the first time. The as-prepared product shows good photocatalytic, dielectric, antibacterial, electrochemical properties. - Highlights: • ZnO Nps were synthesized via combustion method using pigeon pea as a fuel. • The structure of the product was confirmed by XRD technique. • The morphology was confirmed by SEM and TEM images. • The as-prepared product shown good photocatalytic activity, dielectric property. • It has also shown good antibacterial and electrochemical properties. - Abstract: Zinc oxide nanoparticles (ZnO Nps) were successfully synthesized by solution combustion method (SCM) using pigeon pea as a fuel for the first time. X-Ray diffraction pattern reveals that the product belongs to hexagonal system. FTIR spectrum of ZnO Nps shows the band at 420 cm{sup −1} associated with the characteristic vibration of Zn–O. TEM images show that the nanoparticles are found to be ∼40–80 nm. Furthermore, the as-prepared ZnO Nps exhibits good photocatalytic activity for the photodegradation of methylene blue (MB), indicating that they are indeed a promising photocatalytic semiconductor. The antibacterial properties of ZnO nanopowders were investigated by their bactericidal activity against four bacterial strains.

  3. Platelets to rings: Influence of sodium dodecyl sulfate on Zn-Al layered double hydroxide morphology

    SciTech Connect (OSTI)

    Yilmaz, Ceren; Unal, Ugur; Yagci Acar, Havva

    2012-03-15

    In the current study, influence of sodium dodecyl sulfate (SDS) on the crystallization of Zn-Al layered double hydroxide (LDH) was investigated. Depending on the SDS concentration coral-like and for the first time ring-like morphologies were obtained in a urea-hydrolysis method. It was revealed that the surfactant level in the starting solution plays an important role in the morphology. Concentration of surfactant equal to or above the anion exchange capacity of the LDH is influential in creating different morphologies. Another important parameter was the critical micelle concentration (CMC) of the surfactant. Surfactant concentrations well above CMC value resulted in ring-like structures. The crystallization mechanism was discussed. - Graphical abstract: Dependence of ZnAl LDH Morphology on SDS concentration. Highlights: Black-Right-Pointing-Pointer In-situ intercalation of SDS in ZnAl LDH was achieved via urea hydrolysis method. Black-Right-Pointing-Pointer Morphology of ZnAl LDH intercalated with SDS depended on the SDS concentration. Black-Right-Pointing-Pointer Ring like morphology for SDS intercalated ZnAl LDH was obtained for the first time. Black-Right-Pointing-Pointer Growth mechanism was discussed. Black-Right-Pointing-Pointer Template assisted growth of ZnAl LDH was proposed.

  4. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect (OSTI)

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  5. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    SciTech Connect (OSTI)

    Aravindh, S. Assa; Schwingenschloegl, Udo E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S. E-mail: iman.roqan@kaust.edu.sa

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ?2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21?meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200?meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  6. Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

    SciTech Connect (OSTI)

    Napari, Mari Malm, Jari; Lehto, Roope; Julin, Jaakko; Arstila, Kai; Sajavaara, Timo; Lahtinen, Manu

    2015-01-15

    ZnO films were grown by atomic layer deposition at 35?C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30?nm) with a film surface roughness up to 6?nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

  7. Effects of Zn additions to highly magnetoelastic FeGa alloys

    SciTech Connect (OSTI)

    Lograsso, Thomas A.; Jones, Nicholas J.; Wun-Fogle, Marilyn; Restorff, James B.; Schlagel, Deborah L.; Petculescu, Gabriela; Clark, Arthur E.; Hathaway, Kristl B.

    2015-05-07

    Fe{sub 1−x}M{sub x} (M = Ga, Ge, Si, Al, Mo and x ∼ 0.18) alloys offer an extraordinary combination of magnetoelasticity and mechanical properties. They are rare-earth-free, can be processed using conventional deformation techniques, have high magnetic permeability, low hysteresis, and low magnetic saturation fields, making them attractive for device applications such as actuators and energy harvesters. Starting with Fe-Ga as a reference and using a rigid-band-filling argument, Zhang et al. predicted that lowering the Fermi level by reducing the total number of electrons could enhance magnetoelasticity. To provide a direct experimental validation for Zhang's hypothesis, elemental additions with lower-than-Ga valence are needed. Of the possible candidates, only Be and Zn have sufficient solubility. Single crystals of bcc Fe-Ga-Zn have been grown with up to 4.6 at. % Zn in a Bridgman furnace under elevated pressure (15 bars) in order to overcome the high vapor pressure of Zn and obtain homogeneous crystals. Single-crystal measurements of magnetostriction and elastic constants allow for the direct comparison of the magnetoelastic coupling constants of Fe-Ga-Zn with those of other magnetoelastic alloys in its class. The partial substitution of Ga with Zn yields values for the magnetoelastic coupling factor, −b{sub 1}, comparable to those of the binary Fe-Ga alloy.

  8. Optical injection probing of single ZnO tetrapod lasers

    SciTech Connect (OSTI)

    Szarko, Jodi M.; Song, Jae Kyu; Blackledge, Charles Wesley; Swart, Ingmar; Leone, Stephen R.; Li, Shihong; Zhao, Yiping

    2004-11-23

    The properties of zinc oxide (ZnO) nanotetrapod lasers are characterized by a novel ultrafast two-color pump/stimulated emission probe technique. Single legs of tetrapod species are isolated by a microscope objective, pumped by 267 nm pulses, and subjected to a time-delayed 400 nm optical injection pulse, which permits investigation of the ultrafast carrier dynamics in the nanosize materials. With the optical injection pulse included, a large increase in the stimulated emission at 400 nm occurs, which partially depletes the carriers at this wavelength and competes with the normal 390 nm lasing. At the 390 nm lasing wavelengths, the optical injection causes a decrease in the stimulated emission due to the energetic redistribution of the excited carrier depletion, which occurs considerably within the time scale of the subpicosecond duration of the injection pulse. The effects of the optical injection on the spectral gain are employed to probe the lasing dynamics, which shows that the full width at half maximum of the lasing time is 3 ps.

  9. LiF/ZnS Neutron Multiplicity Counter

    SciTech Connect (OSTI)

    Stave, Sean C.; Bliss, Mary; Kouzes, Richard T.; Lintereur, Azaree T.; Robinson, Sean M.; Siciliano, Edward R.; Wood, Lynn S.

    2015-06-01

    Abstract: Alternatives to the use of 3He for the detection of thermal neutrons are being investigated. One of the most challenging applications for 3He alternatives is in neutron multiplicity counters. Neutron multiplicity counters are used to provide rapid assay of samples which contain an unknown amount of plutonium in a potentially unknown configuration. With appropriate detector design, the neutron single, double, and triple coincidence events can be used to extract information of three unknown parameters such as the 240Pu-effective mass, the sample self-multiplication, and the (α,n) rate. A project at PNNL has investigated replacing 3He-based tubes with LiF/ZnS neutron-scintillator sheets and wavelength shifting plastic for light pipes. A four-panel demonstrator module has been constructed, tested, and compared with detailed modeling results. The findings indicate that a full-scale system can be constructed with the same overall size as the most efficient 3He-based system and with improved performance. Remaining design challenges include electronics and robust neutron/gamma-ray discrimination based on pulse shape analysis at high rates. A review of the current effort and the most recent findings will be presented.

  10. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect (OSTI)

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  11. Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

    SciTech Connect (OSTI)

    Gareso, P. L. Rauf, N. Juarlin, E.; Sugianto,; Maddu, A.

    2014-09-25

    Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400C to 600C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the asgrown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 and c = 5.2531 .

  12. The Investigation of Decomposition of Supersaturated Si<Zn> Solid Solution by X-Ray Diffuse Scattering

    SciTech Connect (OSTI)

    Shcherbachev, Kirill; Privezentsev, Vladimir

    2010-04-06

    The results of investigation of microstructure of Zn doped n-type Si by X-ray Diffuse Scattering (XRDS) are presented. Experimental samples were made by a high-temperature Zn diffusion annealing with subsequent quenching and tempering. Reciprocal space maps of XRDS were obtained. They resulted in that crystal lattice of the samples contains spherical MDs of vacancy type and plane shape MDs of interstitial type. The MDs average radius and their type depend on Zn doping level and thermal treatment after Zn diffusion.

  13. The effect of Ce{sup 4+} incorporation on structural, morphological and photocatalytic characters of ZnO nanoparticles

    SciTech Connect (OSTI)

    Kannadasan, N.; Shanmugam, N. Cholan, S.; Sathishkumar, K.; Viruthagiri, G.; Poonguzhali, R.

    2014-11-15

    We report a simple chemical precipitation method for the preparation of undoped and cerium doped ZnO nanocrystals. The concentration of cerium in the products can be controlled in the range of 0.0250.125 mol. The structure and chemical compositions of the products were characterized by X-ray diffraction, X-ray photoelectron spectroscopy; energy dispersive spectrum and Fourier transform infrared spectroscopy. The results demonstrate that Ce{sup 4+} ions were successfully incorporated into the lattice position of Zn{sup 2+} ions in ZnO. The morphology of the products was analyzed by field emission scanning electron microscopy and confirmed by high resolution transmission electron microscope analysis. The optical properties of the products were studied by ultravioletvisible and room temperature photoluminescence measurements. The photoluminescence emission spectra of Ce-doped ZnO showed enhanced visible emissions as a result of 5d ? 4f transition of cerium. In particular, a novel photocatalytic activity of the products was assessed using methylene blue. The obtained result reveals that Ce-doped products show higher reduction efficiency for methylene blue than the undoped ZnO. - Highlights: Nanocrystals of ZnO and ZnO:Ce{sup 4+} were grown. XPS results confirmed the incorporated cerium in tetravalence. PL emission exhibited 5d ? 4f transition on cerium doping. Doped ZnO decolorizes MB faster than undoped ZnO.

  14. La-doped ZnO nanoparticles: Simple solution-combusting preparation and applications in the wastewater treatment

    SciTech Connect (OSTI)

    Wu, Tingting; Ni, Yonghong; Ma, Xiang; Hong, Jianming

    2013-11-15

    Graphical abstract: La-doped ZnO nanoparticles have been successfully prepared by a simple solution combustion route and exhibit good adsorption for Cu and Pb ion from water systems. - Highlights: • La-doped ZnO nanoparticles were successfully prepared via a simple solution-combustion route. • The integration of La{sup 3+} ions into ZnO decreased the band-gap of ZnO nanoparticles. • La-doped ZnO nanoparticles could remove more Pb and Cu ions from water resources than undoped ZnO. - Abstract: La-doped ZnO nanoparticles have been successfully synthesized by a simple solution combustion method via employing a mixture of ethanol and ethyleneglycol (v/v = 60/40) as the solvent. Zinc acetate and oxygen gas in the atmosphere were used as zinc and oxygen sources, and La(NO{sub 3}){sub 3} as the doping reagent. The as-obtained product was characterized by means of powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy. Experiments showed that La-doped ZnO nanoparticles exhibited the higher capacities for the removal of Pb{sup 2+} and Cu{sup 2+} ions in water resource than undoped ZnO nanoparticles.

  15. Development of vertically aligned ZnO-nanowires scintillators for high spatial resolution x-ray imaging

    SciTech Connect (OSTI)

    Kobayashi, Masakazu Komori, Jun; Shimidzu, Kaiji; Izaki, Masanobu; Uesugi, Kentaro; Takeuchi, Akihisa; Suzuki, Yoshio

    2015-02-23

    Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu{sub 3}Al{sub 5}O{sub 12:}Ce{sup 3+}. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.

  16. Treatability study Number PDC-1-O-T. Final report

    SciTech Connect (OSTI)

    1998-04-22

    Los Alamos National Laboratory provided treatability study samples from four waste streams, designated Stream {number_sign}1, Stream {number_sign}3, Stream {number_sign}6, and Stream {number_sign}7. Stream {number_sign}1 consisted of one 55-gallon drum of personal protective equipment (PPE), rags, and neutralizing agent (bicarbonate) generated during the cleanup of a sodium dichromate solution spill. Stream {number_sign}3 was one 55-gallon drum of paper, rags, lab utensils, tools, and tape from the decontamination of a glovebox. The sample of Stream {number_sign}6 was packaged in three 30-gallon drums and a 100 ft{sup 3} wooden box. It consisted of plastic sheeting, PPE, and paper generated from the cleanup of mock explosive (barium nitrate) from depleted uranium parts. Stream {number_sign}7 was scrap metal (copper, stainless and carbon steel joined with silver solder) from the disassembly of gas manifolds. The objective of the treatability study is to determine: (1) whether the Perma-Fix stabilization/solidification process can treat the waste sample to meet Land Disposal Restrictions and the Waste Acceptance Criteria for LANL Technical Area 54, Area G, and (2) optimum loading and resulting weight and volume of finished waste form. The stabilized waste was mixed into grout that had been poured into a lined drum. After each original container of waste was processed, the liner was closed and a new liner was placed in the same drum on top of the previous closed liner. This allowed an overall reduction in waste volume but kept waste segregated to minimize the amount of rework in case analytical results indicated any batch did not meet treatment standards. Samples of treated waste from each waste stream were analyzed by Perma-Fix Analytical Services to get a preliminary approximation of TCLP metals. Splits of these samples were sent to American Environmental Network`s mixed waste analytical lab in Cary, NC for confirmation analysis. Results were all below applicable limits.

  17. Copper doping of ZnO crystals by transmutation of {sup 64}Zn to {sup 65}Cu: An electron paramagnetic resonance and gamma spectroscopy study

    SciTech Connect (OSTI)

    Recker, M. C.; McClory, J. W. Holston, M. S.; Golden, E. M.; Giles, N. C.; Halliburton, L. E.

    2014-06-28

    Transmutation of {sup 64}Zn to {sup 65}Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the {sup 65}Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of {sup 64}Zn nuclei to {sup 65}Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu{sup 2+} ions (where {sup 63}Cu and {sup 65}Cu hyperfine lines are easily resolved). A spectrum from isolated Cu{sup 2+} (3d{sup 9}) ions acquired after the neutron irradiation showed only hyperfine lines from {sup 65}Cu nuclei. The absence of {sup 63}Cu lines in this Cu{sup 2+} spectrum left no doubt that the observed {sup 65}Cu signals were due to transmuted {sup 65}Cu nuclei created as a result of the neutron irradiation. Small concentrations of copper, in the form of Cu{sup +}-H complexes, were inadvertently present in our as-grown ZnO crystal. These Cu{sup +}-H complexes are not affected by the neutron irradiation, but they dissociate when a crystal is heated to 900 °C. This behavior allowed EPR to distinguish between the copper initially in the crystal and the copper subsequently produced by the neutron irradiation. In addition to transmutation, a second major effect of the neutron irradiation was the formation of zinc and oxygen vacancies by displacement. These vacancies were observed with EPR.

  18. Synthesis and Characterization of PhotocatalyticTiO2-ZnFe2O4Nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.

    2006-01-01

    A new coprecipitation/hydrolysis synthesis route is used to create aTiO2-ZnFe2O4nanocomposite that is directed towards extending the photoresponse ofTiO2from UV to visible wavelengths (>400?nm). The effect ofTiO2's accelerated anatase-rutile phase transformation due to the presence of the coupledZnFe2O4narrow-bandgap semiconductor is evaluated. The transformation's dependence on pH, calcinations temperature, particle size, andZnFe2O4concentration has been analyzed using XRD, SEM, and UV-visible spectrometry. The requirements for retaining the highly photoactive anatase phase present in aZnFe2O4nanocomposite are outlined. The visible-light-activated photocatalytic activity of theTiO2-ZnFe2O4nanocomposites has been compared to an AldrichTiO2reference catalyst, using a solar-simulated photoreactor formorethe degradation of phenol.less

  19. Synthesis and Characterization of Photocatalytic TiO 2 -ZnFe 2 O 4 Nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.

    2006-01-01

    A new coprecipimore » tation/hydrolysis synthesis route is used to create a TiO 2 -ZnFe 2 O 4 nanocomposite that is directed towards extending the photoresponse of TiO 2 from UV to visible wavelengths ( > 400   nm ). The effect of TiO 2 's accelerated anatase-rutile phase transformation due to the presence of the coupled ZnFe 2 O 4 narrow-bandgap semiconductor is evaluated. The transformation's dependence on pH, calcinations temperature, particle size, and ZnFe 2 O 4 concentration has been analyzed using XRD, SEM, and UV-visible spectrometry. The requirements for retaining the highly photoactive anatase phase present in a ZnFe 2 O 4 nanocomposite are outlined. The visible-light-activated photocatalytic activity of the TiO 2 -ZnFe 2 O 4 nanocomposites has been compared to an Aldrich TiO 2 reference catalyst, using a solar-simulated photoreactor for the degradation of phenol.« less

  20. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect (OSTI)

    Kovcs, A.; Duchamp, M.; Boothroyd, C. B.; Dunin-Borkowski, R. E.; Ney, A.; Ney, V.; Galindo, P. L.; Kaspar, T. C.; Chambers, S. A.

    2013-12-28

    We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al{sub 2}O{sub 3}), as well as the Co:ZnO/Al{sub 2}O{sub 3} interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 34 Co:ZnO layers next to the Al{sub 2}O{sub 3} substrate. The stacking fault density is in the range of 10{sup 17} cm{sup ?3}. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties.

  1. Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys

    SciTech Connect (OSTI)

    Li, Keyan; Kang, Congying [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)] [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Xue, Dongfeng, E-mail: dongfeng@ciac.jl.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China) [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-10-15

    In this work, the bulk moduli and band gaps of M{sub x}Zn{sub 1?x}O (M = Be, Mg, Ca, Cd) alloys in the whole composition range were quantitatively calculated by using the electronegativity-related models for bulk modulus and band gap, respectively. We found that the change trends of bulk modulus and band gap with an increase of M concentration x are same for Be{sub x}Zn{sub 1?x}O and Cd{sub x}Zn{sub 1?x}O, while the change trends are reverse for Mg{sub x}Zn{sub 1?x}O and Ca{sub x}Zn{sub 1?x}O. It was revealed that the bulk modulus is related to the valence electron density of atoms whereas the band gap is strongly influenced by the detailed chemical bonding behaviors of constituent atoms. The current work provides us a useful guide to compositionally design advanced alloy materials with both good mechanical and optoelectronic properties.

  2. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    SciTech Connect (OSTI)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-11-15

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm{sup 2}) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications.

  3. Synthesis of Uniformly Distributed Single- and Double-sided Zinc Oxide (ZnO) Nanocombs

    SciTech Connect (OSTI)

    Petford-Long, Amanda K.; Liu, Yuzi; Altintas Yildirim, Ozlem

    2015-11-15

    Uniformly distributed single- and double-sided zinc oxide (ZnO) nanocomb structures have been prepared by a vapor-liquid-solid technique from a mixture of ZnO nanoparticles and graphene nanoplatelets. The ZnO seed nanoparticles were synthesized via a simple precipitation method. The structure of the ZnO nanocombs could easily be controlled by tuning the carrier-gas flow rate during growth. Higher flow rate resulted in the formation of uniformly-distributed single-sided comb structures with nanonail-shaped teeth, as a result of the self-catalysis effect of the catalytically active Zn-terminated polar (0001) surface. Lower gas flow rate was favorable for production of double-sided comb structures with the two sets of teeth at an angle of similar to 110 degrees to each other along the comb ribbon, which was attributed to the formation of a bicrystal nanocomb ribbon. The formation of such a double-sided structure with nanonail-shaped teeth has not previously been reported.

  4. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    SciTech Connect (OSTI)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  5. Visible light plasmonic heating of Au-ZnO for the catalytic reduction of CO2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Congjun; Ranasingha, Oshadha; Natesakhawat, Sittichai; Ohodnicki, Paul R.; Andio, Mark; Lewis, James P.; Matranga, Christopher

    2013-01-01

    Plasmonic excitation of Au nanoparticles attached to the surface of ZnO catalysts using low power 532 nm laser illumination leads to significant heating of the catalyst and the conversion of CO2 and H2 reactants to CH4 and CO products. Temperature-calibrated Raman spectra of ZnO phonons show that intensity-dependent plasmonic excitation can controllably heat Au–ZnO from 30 to ~600 °C and simultaneously tune the CH4 : CO product ratio. The laser induced heating and resulting CH4 : CO product distribution agrees well with predictions from thermodynamic models and temperature-programmed reaction experiments indicating that the reaction is a thermally driven process resultingmore » from the plasmonic heating of the Au-ZnO. The apparent quantum yield for CO2 conversion under continuous wave (cw) 532 nm laser illumination is 0.030%. The Au-ZnO catalysts are robust and remain active after repeated laser exposure and cycling. The light intensity required to initiate CO2 reduction is low ( ~2.5 x 105 W m-2) and achievable with solar concentrators. Our results illustrate the viability of plasmonic heating approaches for CO2 utilization and other practical thermal catalytic applications.« less

  6. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  7. Nanoscale mapping of plasmon and exciton in ZnO tetrapods coupled with Au nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertoni, Giovanni; Fabbri, Filippo; Villani, Marco; Lazzarini, Laura; Turner, Stuart; Van Tendeloo, Gustaaf; Calestani, Davide; Gradečak, Silvija; Zappettini, Andrea; Salviati, Giancarlo

    2016-01-12

    Metallic nanoparticles can be used to enhance optical absorption or emission in semiconductors, thanks to a strong interaction of collective excitations of free charges (plasmons) with electromagnetic fields. Herein we present direct imaging at the nanoscale of plasmon-exciton coupling in Au/ZnO nanostructures by combining scanning transmission electron energy loss and cathodoluminescence spectroscopy and mapping. The Au nanoparticles (~30 nm in diameter) are grown in-situ on ZnO nanotetrapods by means of a photochemical process without the need of binding agents or capping molecules, resulting in clean interfaces. Interestingly, the Au plasmon resonance is localized at the Au/vacuum interface, rather than presentingmore » an isotropic distribution around the nanoparticle. Moreover, on the contrary, a localization of the ZnO signal has been observed inside the Au nanoparticle, as also confirmed by numerical simulations.« less

  8. ZnO/Ag composite nanorod arrays for surface-plasmon-enhanced emission study

    SciTech Connect (OSTI)

    Pal, Anil Kumar E-mail: d.bharathimohan@gmail.com; Mohan, D. Bharathi E-mail: d.bharathimohan@gmail.com

    2014-04-24

    The surface plasmon resonance enhanced emission through coupling of surface plasmons and exciton band energies is studied in hybrid ZnO/Ag nanostructure. The catalytic growth of ZnO nanorods is controlled in seed mediated growth by altering size distribution of Ag nanoislands. X-ray diffraction shows a predominant (002) crystal plane confirming the preferential growth of ZnO nanorods on as-deposited Ag. Increase of surface roughness in Ag film by post deposition annealing process enhances the light emission due to momentum matching between surface plasmons and excitons as well as a red shift of 32 meV occurs due to multi phonon and phonon-exciton interaction.

  9. Effect of Fe doping concentration on photocatalytic activity of ZnO nanosheets under natural sunlight

    SciTech Connect (OSTI)

    Khokhra, Richa; Kumar, Rajesh

    2015-05-15

    A facile room temperature, aqueous solution-based chemical method has been adopted for large-scale synthesis of Fe doped ZnO nanosheets. The XRD and SEM results reveal the as-synthesized products well crystalline and accumulated by large amount of interweave nanosheets, respectively. Energy dispersive spectroscopy data confirmed Fe doping of the ZnO nanosheets with a varying Fe concentration. The photoluminescence spectrum reveals a continuous suppression of defect related emissions intensity by increasing the concentration of the Fe ion. A photocatalytic activity using these samples under sunlight irradiation in the mineralization of methylene blue dye was investigated. The photocatalytic activity of Fe doped ZnO nanosheets depends upon the presence of surface oxygen vacancies.

  10. Band alignment and interfacial structure of ZnO/Si heterojunction with

    Office of Scientific and Technical Information (OSTI)

    Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers (Journal Article) | SciTech Connect Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers Citation Details In-Document Search Title: Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers Energy band alignment of ZnO/Si heterojunction with thin interlayers Al{sub 2}O{sub 3} and HfO{sub 2} grown by atomic layer

  11. A Novel and Functional Single Layer Sheet of ZnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jia; Sumpter, Bobby G; Kent, Paul R; Huang, Jingsong

    2015-01-01

    In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

  12. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    SciTech Connect (OSTI)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-12-04

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.

  13. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect (OSTI)

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  14. Study of difference in interfacial reaction at Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} heterostructure using synchrotron radiation

    SciTech Connect (OSTI)

    Wadikar, A. D. Master, Ridhi Choudhary, R. J. Phase, D. M.

    2014-04-24

    We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed a change in the density of states near the Fermi level in valence band spectra in case of Fe{sub 3}O{sub 4}/ZnO bilayer when compared to that of ZnO/Fe{sub 3}O{sub 4}. Nonlinear current–voltage (I-V) characteristics were observed in both the samples confirmed that these bilayer structures can be used for spintronic application.

  15. ZnO Nanorod Thermoplastic Polyurethane Nanocomposites: Morphology and Shape Memory Performance

    SciTech Connect (OSTI)

    Koerner, H.; Kelley, J; George, J; Drummy, L; Mirau, P; Bell, N; Hsu, J; Vaia, R

    2009-01-01

    The impact of dispersed alkylthiol-modified ZnO nanorods, as a function of rod aspect ratio and concentration, on the shape memory character of a thermoplastic polyurethane with low hard-segment density (LHS-TPU) is examined relative to the enhanced performance occurring for carbon nanofiber (CNF) dispersion. Solution blending resulted in uniform dispersion within the LHS-TPU of the ZnO nanorods at low volume (weight) fractions (<2.9% v/v (17.75% w/w)). Tensile modulus enhancements were modest though, comparable to values observed for spherical nanofillers. Shape memory characteristics, which in this LHS-TPU result when strain-induced crystallites retard the entropic recovery of the deformed chains, were unchanged for these low volume fraction ZnO nanocomposites. Higher ZnO loadings (12% v/v (50% w/w)) exhibited clustering of ZnO nanorods into a mesh-like structure. Here, tensile modulus and shape recovery characteristics were improved, although not as great as seen for comparable CNF addition. Wide angle X-ray diffraction and NMR revealed that the addition of ZnO nanorods did not impact the inherent strain induced crystallization of the LHS-TPU, which is in contrast to the impact of CNFs and emphasizes the impact of interactions at the polymer-nanoparticle interface. Overall, these findings reinforce the hypothesis that the shape memory properties of polymer nanocomposites are governed by the extent to which nanoparticle addition, via nanoparticle aspect ratio, hierarchical morphology, and interfacial interactions, impacts the molecular mechanism responsible for trapping elastic strain.

  16. Characteristics of ZnO nanostructures produced with [DMIm]BF{sub 4} using ultrasonic radiation

    SciTech Connect (OSTI)

    Rahman, I. B. Abdul; Ayob, M. T. M.; Ishak, I. S.; Mohd Lawi, R. L.; Isahak, W. N. R. W.; Hamid, M. H. N. Abd; Othman, N. K.; Radiman, S.

    2012-11-27

    Great interests in metallic oxides have emerged because of the promising properties of these materials for various applications such as solar cells and sensors. ZnO nanostructures with different morphologies were successfully synthesized from Zn(CH{sub 3}COO){sub 2} Bullet 2H{sub 2}O, NaOH and room temperature ionic liquid (RTIL) 1-decyl-3-methylimidazolium tetrafluoroborate, [DMIm][BF{sub 4}] with ultrasound irradiation. Parameters such as the effect of sonication time (30, 60 and 90 minutes) and Zn(Ac){sub 2} precursor to [DMIm][BF{sub 4}] ratios of 3:5, 5:5 and 5:3 were investigated. X-ray diffraction patterns revealed that the ZnO nanocrystals were hexagonal zincite crystalline in structure. The band gap energies (E{sub g}) were estimated to be 3.35-3.55 eV from the UV-Visible spectrum. The solution with the highest ratio of Zn was analysed with photoluminescence spectroscopy, which exhibited peaks at 362, 403, 468 and 539 nm, at room temperature. The micrographs of field emission scanning electron microscopy and transmission electron microscopy showed that the synthesis products were spherical (30-60 nm), spindle ({approx}10 Multiplication-Sign 70 nm for width Multiplication-Sign length) and whisker-like (100-200 nm), with their dimensions decreasing systematically with increased sonication time. Chemical compositions were approximated at 1:1 for Zn and O, estimated by electron dispersive x-ray spectrum.

  17. Surface Modification of ZnO Using Triethoxysilane-Based Molecules

    SciTech Connect (OSTI)

    Allen, C. G.; Baker, D. J.; Albin, J. M.; Oertli, H. E.; Gillaspie, D. T.; Olson, D. C.; Furtak, T. E.; Collins, R. T.

    2008-12-01

    Zinc oxide (ZnO) is an important material for hybrid inorganic-organic devices in which the characteristics of the interface can dominate both the structural and electronic properties of the system. These characteristics can be modified through chemical functionalization of the ZnO surface. One of the possible strategies involves covalent bonding of the modifier using silane chemistry. Whereas a significant body of work has been published regarding silane attachments to glass and SiO{sub 2}, there is less information about the efficacy of this method for controlling the surface of metal oxides. Here we report our investigation of molecular layers attached to polycrystalline ZnO through silane bonding, controlled by an amine catalyst. The catalyst enables us to use triethoxysilane precursors and thereby avoid undesirable multilayer formation. The polycrystalline surface is a practical material, grown by sol-gel processing, that is under active exploration for device applications. Our study included terminations with alkyl and phenyl groups. We used water contact angles, infrared spectroscopy, and X-ray photoemission spectroscopy to evaluate the modified surfaces. Alkyltriethoxysilane functionalization of ZnO produced molecular layers with submonolayer coverage and evidence of disorder. Nevertheless, a very stable hydrophobic surface with contact angles approaching 106{sup o} resulted. Phenyltriethoxysilane was found to deposit in a similar manner. The resulting surface, however, exhibited significantly different wetting as a result of the nature of the end group. Molecular layers of this type, with a variety of surface terminations that use the same molecular attachment scheme, should enable interface engineering that optimizes the chemical selectivity of ZnO biosensors or the charge-transfer properties of ZnO-polymer interfaces found in oxide-organic electronics.

  18. Study of Even-Even/Odd-Even/Odd-Odd Nuclei in Zn-Ga-Ge Region in the Proton-Neutron IBM/IBFM/IBFFM

    SciTech Connect (OSTI)

    Yoshida, N.; Brant, S.; Zuffi, L.

    2009-08-26

    We study the even-even, odd-even and odd-odd nuclei in the region including Zn-Ga-Ge in the proton-neutron IBM and the models derived from it: IBM2, IBFM2, IBFFM2. We describe {sup 67}Ga, {sup 65}Zn, and {sup 68}Ga by coupling odd particles to a boson core {sup 66}Zn. We also calculate the beta{sup +}-decay rates among {sup 68}Ge, {sup 68}Ga and {sup 68}Zn.

  19. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect (OSTI)

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  20. Evolution of quasiparticle states with and without a Zn impurity in doped

    Office of Scientific and Technical Information (OSTI)

    122 iron pnictides (Journal Article) | SciTech Connect Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Citation Details In-Document Search Title: Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Authors: Pan, Lihua ; Li, Jian ; Tai, Yuan-Yen ; Graf, Matthias J. ; Zhu, Jian-Xin ; Ting, C. S. Publication Date: 2014-10-01 OSTI Identifier: 1180664 Grant/Contract Number: AC52-06NA25396 Type: Publisher's

  1. Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants Citation Details In-Document Search Title: Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants Authors: Kim, S H ; Satcher, J H ; Han, T Y Publication Date: 2011-05-27 OSTI Identifier: 1184130 Report Number(s): LLNL-JRNL-485258 DOE Contract Number: DE-AC52-07NA27344 Resource Type: Journal Article Resource Relation: Journal Name: Microporous and Mesoporous Materials,

  2. Native point defects and doping in ZnGeN 2 (Journal Article) | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    Native point defects and doping in ZnGeN 2 This content will become publicly available on April 11, 2017 « Prev Next » Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 93; Journal Issue: 15; Journal ID: ISSN 2469-9950

  3. Preparation and characterization of nanodiamond cores coated with a thin Ni-Zn-P alloy film

    SciTech Connect (OSTI)

    Wang Rui; Ye Weichun; Ma Chuanli; Wang Chunming

    2008-02-15

    Nanodiamond cores coated with a thin Ni-Zn-P alloy film were prepared by an electroless deposition method under the conditions of tin chloride sensitization and palladium chloride activation. The prepared materials were analyzed by Fourier transform infrared (FTIR) spectrometry and X-ray diffraction (XRD). The nanostructure of the materials was then characterized by transmission electron microscopy (TEM). The alloy film composition was characterized by Energy Dispersive X-ray (EDX) analysis. The results indicated the approximate composition 49.84%Ni-37.29%Zn-12.88%P was obtained.

  4. Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Andelman, Tamar; Gong, Yinyan; Neumark, Gertrude; O'Brien, Stephen

    2007-01-01

    A novel solution method to control the diameter of ZnO nanorods is reported. Small diameter (2-3 nm) nanorods were synthesized from trihexylamine, and large diameter (50–80 nm) nanorods were synthesized by increasing the alkyl chain length to tridodecylamine. The defect (green) emission of the photoluminescence (PL) spectra of the nanorods varies with diameter, and can thus be controlled by the diameter control. The small ZnO nanorods have strong green emission, while the large diameter nanorods exhibit a remarkably suppressed green band. We show that this observation supports surface oxygen vacancies as the defect that gives rise to the green emission.

  5. A Reversible Structural Phase Transition in ZnV2O6 at High Pressures

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect A Reversible Structural Phase Transition in ZnV2O6 at High Pressures Citation Details In-Document Search Title: A Reversible Structural Phase Transition in ZnV2O6 at High Pressures Authors: Tang, R. ; Li, Y. ; Han, D. ; Li, H. ; Zhao, Y. ; Gao, C. ; Zhu, P. ; Wang, X. Publication Date: 2014-05-22 OSTI Identifier: 1162417 Report Number(s): BNL--106361-2014-JA Journal ID: ISSN 1932--7447 DOE Contract Number: DE-AC02-98CH10886 Resource Type: Journal Article

  6. Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boichot, R.; Tian, L.; Richard, M. -I.; Crisci, A.; Chaker, A.; Cantelli, V.; Coindeau, S.; Lay, S.; Ouled, T.; Guichet, C.; et al

    2016-01-05

    In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

  7. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

    SciTech Connect (OSTI)

    Simmons, Jay G.; Liu, Jie; Foreman, John V.; Everitt, Henry O.

    2013-11-11

    The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.

  8. New tetragonal derivatives of cubic NaZn{sub 13}-type structure: RNi{sub

    Office of Scientific and Technical Information (OSTI)

    6}Si{sub 6} compounds, crystal structure and magnetic ordering (R=Y, La, Ce, Sm, Gd-Yb) (Journal Article) | SciTech Connect New tetragonal derivatives of cubic NaZn{sub 13}-type structure: RNi{sub 6}Si{sub 6} compounds, crystal structure and magnetic ordering (R=Y, La, Ce, Sm, Gd-Yb) Citation Details In-Document Search Title: New tetragonal derivatives of cubic NaZn{sub 13}-type structure: RNi{sub 6}Si{sub 6} compounds, crystal structure and magnetic ordering (R=Y, La, Ce, Sm, Gd-Yb) Novel

  9. Discovery of a ternary pseudobrookite phase in the earth-abundant TiZnO

    Office of Scientific and Technical Information (OSTI)

    system (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Discovery of a ternary pseudobrookite phase in the earth-abundant TiZnO system Citation Details In-Document Search Title: Discovery of a ternary pseudobrookite phase in the earth-abundant TiZnO system Authors: Perry, Nicola H. ; Stevanovic, Vladan ; Lime, Linda Y. ; Mason, Thomas O. [1] ; CSM) [2] ; NWU) [2] ; MIT) [2] + Show Author Affiliations Stanford ( Publication Date: 2016-03-18 OSTI Identifier:

  10. Native point defects and doping in ZnGeN 2 (Journal Article) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect SciTech Connect Search Results Journal Article: Native point defects and doping in ZnGeN 2 Citation Details In-Document Search This content will become publicly available on April 11, 2017 Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal

  11. Dielectronic recombination of Zn-like W 44 + from Cu-like W 45 + (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Dielectronic recombination of Zn-like W 44 + from Cu-like W 45 + Citation Details In-Document Search This content will become publicly available on June 23, 2016 Title: Dielectronic recombination of Zn-like W 44 + from Cu-like W 45 + Authors: Safronova, U. I. ; Safronova, A. S. ; Beiersdorfer, P. Publication Date: 2015-06-24 OSTI Identifier: 1188517 Grant/Contract Number: AC52-07NA27344; NA0001984 Type: Publisher's Accepted Manuscript Journal Name: Physical Review

  12. CASL - Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Density functional theory calculations Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds: Density functional theory calculations Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds: Density functional theory calculations D.A. Andersson and C.R. Stanek Materials Science and Technology Division Los Alamos National Laboratory Density functional theory (DFT) calculations have been employed to better understand the thermodynamic properties of AB2O4 (where A=Fe2+, Ni2+ or

  13. Interaction of light with the ZnO surface: Photon induced oxygen breathing, oxygen vacancies, persistent photoconductivity, and persistent photovoltage

    SciTech Connect (OSTI)

    Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan

    2014-01-21

    ZnO surfaces adsorb oxygen in the dark and emit CO{sub 2} when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO{sub 2}. The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called green luminescence in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy completes the vacancy to become a full ZnO molecule vacancy, which does not produce deep levels. Our results explain why ZnO finds use as an electrical detector for oxygen and for carbon containing gas molecules. They may also shed new light on photocatalytic uses of ZnO. It is suggested that similar surface phenomena may affect other semiconducting oxides.

  14. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

    SciTech Connect (OSTI)

    Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Pimentel, Ana C.M.B.G.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N.

    2004-09-27

    We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm{sup 2}/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10{sup 5}. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

  15. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    SciTech Connect (OSTI)

    Chowdhury, S. Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-12-01

    The present study compares structural and optical modifications of bare and silica (SiO{sub 2}) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni{sup 12+} ion beam with fluences 10{sup 12} to 10{sup 13} ions/cm{sup 2}. Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.

  16. Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

    DOE Patents [OSTI]

    Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

    2006-07-25

    A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

  17. ZnO-PVA nanocomposite films for low threshold optical limiting applications

    SciTech Connect (OSTI)

    Viswanath, Varsha; Beenakumari, C.; Muneera, C. I. [Department of Physics, University of Kerala, Kariavattom, Trivandrum-695581, Kerala (India)

    2014-10-15

    Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages (<1.2 wt%) of ZnO in PVA (?0.62510{sup ?3}M to 710{sup ?3}M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |?{sup (3)}|, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices.

  18. XRD, Photoluminescence and Optical Absorption Investigations of Cobalt-doped ZnO

    SciTech Connect (OSTI)

    Sujinnapram, Supphadate; Onreabroy, Wandee; Nantawisarakul, Tuangrak

    2009-07-07

    Zn{sub 1-x}Co{sub x}O(with x = 0, 0.01, 0.10 and 0.20) were synthesized by solid-state reaction method sintered at 600 deg. C for 12 hours. The samples were studied by X-ray diffraction (XRD), optical absorption (UV-Vis) and Photoluminescence (PL). Structural analysis by Rietveld method using XRD showed that the peaks of secondary phase Co{sub 3}O{sub 4} with a cubic structure were visible in the high-doped sample (x = 0.1, 0.2), besides the main peaks of wurtzite-like structure the same as that of ZnO. Shift of the XRD peaks proved the incorporation of Co{sup 2+} into the ZnO lattice. The band gap energy decreased from 3.18 to 3.14 eV with the increasing of cobalt concentration. PL spectra at room temperature showed the blue emission with the peak around 412 nm. In addition, the intensity of the blue emission decreased upon increasing the Co concentration, which indicated their high structural, defects and optical quality in the ZnO.

  19. Structurally ordered Pt–Zn/C series nanoparticles as efficient anode catalysts for formic acid electrooxidation

    SciTech Connect (OSTI)

    Zhu, Jing; Zheng, Xin; Wang, Jie; Wu, Zexing; Han, Lili; Lin, Ruoqian; Xin, Huolin L.; Wang, Deli

    2015-09-15

    Controlling the size, composition, and structure of bimetallic nanoparticles is of particular interest in the field of electrocatalysts for fuel cells. In the present work, structurally ordered nanoparticles with intermetallic phases of Pt3Zn and PtZn have been successfully synthesized via an impregnation reduction method, followed by post heat-treatment. The Pt3Zn and PtZn ordered intermetallic nanoparticles are well dispersed on a carbon support with ultrasmall mean particle sizes of ~5 nm and ~3 nm in diameter, respectively, which are credited to the evaporation of the zinc element at high temperature. These catalysts are less susceptible to CO poisoning relative to Pt/C and exhibited enhanced catalytic activity and stability toward formic acid electrooxidation. The mass activities of the as-prepared catalysts were approximately 2 to 3 times that of commercial Pt at 0.5 V (vs. RHE). As a result, this facile synthetic strategy is scalable for mass production of catalytic materials.

  20. Structurally ordered Pt–Zn/C series nanoparticles as efficient anode catalysts for formic acid electrooxidation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Jing; Zheng, Xin; Wang, Jie; Wu, Zexing; Han, Lili; Lin, Ruoqian; Xin, Huolin L.; Wang, Deli

    2015-09-15

    Controlling the size, composition, and structure of bimetallic nanoparticles is of particular interest in the field of electrocatalysts for fuel cells. In the present work, structurally ordered nanoparticles with intermetallic phases of Pt3Zn and PtZn have been successfully synthesized via an impregnation reduction method, followed by post heat-treatment. The Pt3Zn and PtZn ordered intermetallic nanoparticles are well dispersed on a carbon support with ultrasmall mean particle sizes of ~5 nm and ~3 nm in diameter, respectively, which are credited to the evaporation of the zinc element at high temperature. These catalysts are less susceptible to CO poisoning relative to Pt/Cmore » and exhibited enhanced catalytic activity and stability toward formic acid electrooxidation. The mass activities of the as-prepared catalysts were approximately 2 to 3 times that of commercial Pt at 0.5 V (vs. RHE). As a result, this facile synthetic strategy is scalable for mass production of catalytic materials.« less

  1. Hydrothermal Synthesis and Structural Characterization of Novel Zn-Triazole-Benzenedicarboxylate Frameworks

    SciTech Connect (OSTI)

    Park, Hyunsoo; Moureau, David M.; Parise, John B.

    2008-10-03

    Three new metal-organic coordination polymers were synthesized hydrothermally using Zn2+ ion, 1,2,4-triazole, and 1,4-benzenedicarboxylic acid (BDC): Zn5(H2O)2(C2H2N3)4(C8H4O4)3 {center_dot} 3.9H2O (1), Zn2(C2H2N3)2(C2H3N3)(C8H4O4) {center_dot} 2.5H2O (2), and Zn4(H2O)2(C2H2N3)4(C8H4O4)2 {center_dot} 14H2O (3). Their crystal structures were determined by single-crystal X-ray diffraction. Their thermal properties were examined by thermogravimetric analysis. Structure 1 crystallizes in the monoclinic P21/n space group with a = 10.192(2) {angstrom}, b = 17.764(4) {angstrom}, c = 24.437(5) {angstrom}, {beta} = 91.19(3){sup o}, and V = 4423.3(15) {angstrom}3. Structure 2 crystallizes in the triclinic P space group with a = 7.797(2) {angstrom}, b = 10.047(2) {angstrom}, c = 13.577(3) {angstrom}, {alpha} = 110.18(3){sup o}, {beta} = 105.46(3){sup o}, {gamma} = 93.90(3){sup o}, and V = 947.0(3) {angstrom}3. Structure 3 crystallizes in monoclinic P21/n space group with a = 13.475(3) {angstrom}, b = 26.949(5) {angstrom}, c = 13.509(3) {angstrom}, {beta} = 95.18(3){sup o}, and V = 4885.7(17) {angstrom}3. In structure 1, the units of the triazole-Zn polyhedra are linked by BDC in a zigzag fashion to create the stacking of phenyl groups along the a axis. In structure 2, both triazole and BDC bridge Zn polyhedra in the (011) plane, resulting in the eight-membered channels along the a axis. In the case of structure 3, the BDC links the Zn polyhedra along the b axis to form a pillared open framework. This structure is the most porous of the compounds presented in this work.

  2. Single-step in-situ synthesis and optical properties of ZnSe nanostructured dielectric nanocomposites

    SciTech Connect (OSTI)

    Dey, Chirantan; Rahaman Molla, Atiar; Tarafder, Anal; Karmakar, Basudeb; Kr Mishra, Manish; De, Goutam; Goswami, Madhumita; Kothiyal, G. P.

    2014-04-07

    This work provides the evidence of visible red photoluminescent light emission from ZnSe nanocrystals (NCs) grown within a dielectric (borosilicate glass) matrix synthesized by a single step in-situ technique for the first time and the NC sizes were controlled by varying only the concentration of ZnSe in glass matrix. The ZnSe NCs were investigated by UV-Vis optical absorption spectroscopy, Raman spectroscopy, and transmission electron microscopy (TEM). The sizes of the ZnSe NCs estimated from the TEM images are found to alter in the range of 2–53 nm. Their smaller sizes of the NCs were also calculated by using the optical absorption spectra and the effective mass approximation model. The band gap enlargements both for carrier and exciton confinements were evaluated and found to be changed in the range of 0–1.0 eV. The Raman spectroscopic studies showed blue shifted Raman peaks of ZnSe at 295 and 315 cm{sup −1} indicating phonon confinement effect as well as compressive stress effect on the surface atoms of the NCs. Red photoluminescence in ZnSe-glass nanocomposite reveals a broad multiple-peak structure due to overlapping of emission from NC size related electron-hole recombination (∼707 nm) and emissions from defects to traps, which were formed due to Se and Zn vacancies signifying potential application in photonics.

  3. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  4. Synthesis of monodispersed ZnAl{sub 2}O{sub 4} nanoparticles and their tribology properties as lubricant additives

    SciTech Connect (OSTI)

    Song, Xiaoyun; Zheng, Shaohua; Zhang, Jun; Li, Wei; Chen, Qiang; Cao, Bingqiang

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? The preparation of ZnAl{sub 2}O{sub 4} nanoparticles was realized by hydrothermal method. ? After surface modification, ZnAl{sub 2}O{sub 4} nanoparticles of narrow size distribution can disperse in lubricating oil stably. ? The modified ZnAl{sub 2}O{sub 4} nanoparticles as lubricating oil additives exhibit good tribology properties. -- Abstract: Monodispersed spherical zinc aluminate spinel (ZnAl{sub 2}O{sub 4}) nanoparticles were synthesized via a solvothermal method and modified by oleic acid in cyclohexanol solution. The nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and infrared spectrum (IR). The dispersion ability of nanoparticles in lubricant oil was measured with optical absorbance spectrum. The results show that the modified nanoparticles are nearly monodispersed and can stably disperse in lubricant oil. The tribological properties of the ZnAl{sub 2}O{sub 4} nanoparticles as an additive in lubricant oil were evaluated with four-ball test and thrust-ring test. For comparison, ZnO and Al{sub 2}O{sub 3} nanoparticles as additive in lubricant oil were also tested respectively. The results show that ZnAl{sub 2}O{sub 4} nanoparticles exhibit better tribology properties in terms of anti-wear and anti-friction than ZnO or Al{sub 2}O{sub 3} nanoparticles. The anti-friction and anti-wear mechanisms were discussed and the lubricating effect of ZnAl{sub 2}O{sub 4} nanoparticles can be attributed to nano-bearings effect and tribo-sintering mechanism.

  5. The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

    2014-02-05

    The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

  6. Synthesis and anion exchange properties of a Zn/Ni double hydroxide salt with a guarinoite structure

    SciTech Connect (OSTI)

    Delorme, F.; Seron, A.; Licheron, M.; Veron, E.; Giovannelli, F.; Beny, C.; Jean-Prost, V.; Martineau, D.

    2009-09-15

    In this study, the first route to synthesize a compound with the guarinoite structure (Zn,Co,Ni){sub 6}(SO{sub 4})(OH,Cl){sub 10}.5H{sub 2}O is reported. Zn/Ni guarinoite is obtained from the reaction of NiSO{sub 4}.7H{sub 2}O with solid ZnO in aqueous solution. The resulting green Zn/Ni guarinoite ((Zn{sub 3.52}Ni{sub 1.63})(SO{sub 4}){sub 1.33}(OH{sub 7.64}).4.67H{sub 2}O) was characterized by X-ray diffraction, infrared spectrometry, UV-Visible spectrometry and thermal analysis. It is shown that its structure is similar to the one described for the layered Zn sulfate hydroxide hydrate, i.e. brucite layers with 1/4 empty octahedra presenting tetrahedrally coordinated divalent atoms above and below the empty octahedra. Ni atoms are located in the octahedra and zinc atoms in tetrahedra and octahedra. In this structure the exchangeable anions are located at the apex of tetrahedra. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show that the Zn/Ni guarinoite is composed of aggregates of hexagonal plates of several hundreds of nanometers. Due to its interest for industrial or environmental applications, the exchange of sulfate groups by carbonates has been investigated. Results show a limited exchange and a higher affinity of the Zn/Ni guarinoite for sulfates compared to carbonates. - Graphical abstract: SEM micrograph (secondary electrons) of the synthesized Zn/Ni guarinoite showing that aggregates are composed of small plate-like particles.

  7. Photocatalytic pure water splitting activities for ZnGa{sub 2}O{sub 4} synthesized by various methods

    SciTech Connect (OSTI)

    Zeng, Chunmei; Hu, Tao; Hou, Nianjun; Liu, Siyao; Gao, Wenliang; Cong, Rihong; Yang, Tao

    2015-01-15

    Highlights: High temperature solid state reaction, hydrothermal, sol-gel methods were applied. All ZnGa{sub 2}O{sub 4} samples show UV-light catalytic activities on pure water splitting. Bulk ZnGa{sub 2}O{sub 4} has a good photocatalytic activity per specific surface area. Sol-gel is a superior method to prepare nanosized ZnGa{sub 2}O{sub 4} with a high activity. The AQY for SG-ZnGa{sub 2}O{sub 4} is 2.6% for pure water splitting under 313 nm irradiation. - Abstract: We studied and compared the photocatalytic water splitting performances for ZnGa{sub 2}O{sub 4} prepared by high temperature solid state reaction (HTSSR), hydrothermal (HY) and sol-gel (SG) methods. HTSSR-ZnGa{sub 2}O{sub 4} has a relative large photocatalytic activity per surface area (1.6 ?mol/h/m{sup 2}) in pure water by UV irradiation due to its high crystallinity. The HY- and SG-samples both have small particle sizes (20?30 nm) and therefore high surface area (20 and 29 m{sup 2}/g, respectively), which leads to superior photocatalytic H{sub 2} evolution rates per unit mass (11.5 and 28.5 ?mol/h/g). The apparent quantum yield of SG-ZnGa{sub 2}O{sub 4} for pure water splitting under 313 nm irradiation is 2.6%. The existence of substantial surface defects is the major problem for HY- and SG-ZnGa{sub 2}O{sub 4}. Consequently, the usage of sacrificial agents could greatly enhance the activities and indeed the H{sub 2} evolution rates in 20 Vol. % methanol aqueous solution increase to 100 and 142 ?mol/h/g for HY- and SG-ZnGa{sub 2}O{sub 4}, respectively.

  8. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray

    Office of Scientific and Technical Information (OSTI)

    detectors (Journal Article) | SciTech Connect Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors Citation Details In-Document Search This content will become publicly available on June 23, 2016 Title: Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots.

  9. Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear

    Office of Scientific and Technical Information (OSTI)

    Spectrometers (Journal Article) | SciTech Connect Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers Citation Details In-Document Search Title: Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd{sub 0.9}Zn{sub 0.1}Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials

  10. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for

    Office of Scientific and Technical Information (OSTI)

    Room-temperature Nuclear Radiation Detectors (Journal Article) | SciTech Connect Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that

  11. Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type

    Office of Scientific and Technical Information (OSTI)

    structure (Journal Article) | SciTech Connect Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type structure Citation Details In-Document Search Title: Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type structure The dielectric properties of a polar LiNbO{sub 3}-type ZnSnO{sub 3} synthesized under high-pressure have been investigated with respect to the dielectric permittivity in the relative low frequency range of 10 kHz to 1 MHz and the SHG response at an

  12. Zn-Doping Dependence of Stripe Order in La1.905Ba0.095CuO4

    SciTech Connect (OSTI)

    Hucker, M.; Zimmermann, M.v.; Xu, Z.J.; Wen, J.S.; Gu, G.D.; Tian, W.; Zarestky, J.; Tranquada, J.M.

    2011-04-01

    The effect of Zn-doping on the stripe order in La{sub 1.905}Ba{sub 0.095}CuO{sub 4} has been studied by means of x-ray and neutron diffraction as well as magnetization measurements. While 1% Zn leads to an increase of the spin stripe order, it unexpectedly causes a wipe out of the visibility of the charge stripe order. A magnetic field of 10 Tesla applied along the c-axis has no reversing effect on the charge order. We compare this observation with the Zn-doping dependence of the crystal structure, superconductivity, and normal state magnetism.

  13. Zn-doped and undoped SnO{sub 2} nanoparticles: A comparative structural, optical and LPG sensing properties study

    SciTech Connect (OSTI)

    Mishra, R.K.; Sahay, P.P.

    2012-12-15

    Graphical abstract: The X-ray diffraction (XRD) analyses confirm that all the materials prepared are polycrystalline SnO{sub 2} possessing tetragonal rutile structure. On Zn-doping, the crystallite size has been found to decrease from 25 nm (undoped sample) to 13 nm (1 at% Zn-doped sample). Display Omitted Highlights: ? Zn-doped SnO{sub 2} nanoparticles show smaller crystallite size (1117 nm). ? Optical band gap in SnO{sub 2} nanoparticles increases on Zn-doping. ? 2 at% Zn-doped sample show minimum room temperature resistivity. ? LPG response of the Zn-doped SnO{sub 2} nanoparticles increases considerably. ? 1 at% Zn-doped sample shows maximum response (87%) at 300 C to 1 vol% concentration. -- Abstract: SnO{sub 2} nanoparticles were prepared by the co-precipitation method with SnCl{sub 4}5H{sub 2}O as the starting material and Zn(CH{sub 3}COO){sub 2}2H{sub 2}O as the source of dopant. All the materials prepared have been found to be polycrystalline SnO{sub 2} possessing tetragonal rutile structure with crystallite sizes in the range 1125 nm. Optical analyses reveal that for the SnO{sub 2} nanoparticles, both undoped and Zn-doped, direct transition occurs with the bandgap energies in the range 3.053.41 eV. Variation in the room temperature resistivity of the SnO{sub 2} nanoparticles as a function of dopant concentration has been explained on the basis of two competitive processes: (i) replacement of Sn{sup 4+} ion by an added Zn{sup 2+} ion, and (ii) ionic compensation of Zn{sup 2+} by the formation of oxygen vacancies. Among all the samples examined for LPG sensing, the 1 at% Zn-doped sample exhibits fast and maximum response (?87%) at 300 C for 1 vol% concentration of LPG in air.

  14. Structural and electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles synthesized by hydrothermal method

    SciTech Connect (OSTI)

    Vlazan, P.; Ursu, D.H.; Irina-Moisescu, C.; Miron, I.; Sfirloaga, P.; Rusu, E.

    2015-03-15

    TiO{sub 2}/ZnO core–shell nanoparticles were successfully synthesized by hydrothermal method in two stages: first stage is the hydrothermal synthesis of ZnO nanoparticles and second stage the obtained ZnO nanoparticles are encapsulated in TiO{sub 2}. The obtained ZnO, TiO{sub 2} and TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of X-ray diffraction, transmission electron microscopy, Brunauer, Emmett, Teller and resistance measurements. X-ray diffraction analysis revealed the presence of both, TiO{sub 2} and ZnO phases in TiO{sub 2}/ZnO core–shell nanoparticles. According to transmission electron microscopy images, ZnO nanoparticles have hexagonal shapes, TiO{sub 2} nanoparticles have a spherical shape, and TiO{sub 2}/ZnO core–shell nanoparticles present agglomerates and the shape of particles is not well defined. The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about 101 meV. - Graphical abstract: Display Omitted - Highlights: • TiO{sub 2}/ZnO core–shell nanoparticles were synthesized by hydrothermal method. • TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of XRD, TEM and BET. • Electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles were investigated. • The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about E{sub a} = 101 meV.

  15. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    SciTech Connect (OSTI)

    El Akkad, Fikry; Abdulraheem, Yaser

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  16. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect (OSTI)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  17. Comment on 'The diatomic dication CuZn{sup 2+} in the gas phase' [J. Chem. Phys. 135, 034306 (2011)

    SciTech Connect (OSTI)

    Fiser, Jiri; Diez, Reinaldo Pis; Franzreb, Klaus; Alonso, Julio A.

    2013-02-21

    In this Comment, the density functional theory (DFT) calculations carried out by Diez et al. [J. Chem. Phys. 135, 034306 (2011)] are revised within the framework of the coupled-cluster single double triple method. These more sophisticated calculations allow us to show that the {sup 2}{Sigma}{sup +} electronic ground state of CuZn{sup 2+}, characterized as the metastable ground state by DFT calculations, is a repulsive state instead. The {sup 2}{Delta} and {sup 2}{Pi} metastable states of CuZn{sup 2+}, on the other hand, should be responsible for the formation mechanism of the dication through the near-resonant electron transfer CuZn{sup +}+ Ar{sup +}{yields} CuZn{sup 2+}+ Ar reaction.

  18. Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

    SciTech Connect (OSTI)

    Ding, Jijun; Wang, Minqiang Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

    2014-12-08

    In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.

  19. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  20. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  1. Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub...

    Office of Scientific and Technical Information (OSTI)

    ZnSnOsub 3 exhibits the maximum SHG efficiency of approximately 50 times that of quartz. ... second harmonic generation (SHG) efficiency of approximately 50 times that of quartz. ...

  2. Interactions of aqueous amino acids and proteins with the (110) surface of ZnS in molecular dynamics simulations

    SciTech Connect (OSTI)

    Nawrocki, Grzegorz; Cieplak, Marek

    2014-03-07

    The growing usage of nanoparticles of zinc sulfide as quantum dots and biosensors calls for a theoretical assessment of interactions of ZnS with biomolecules. We employ the molecular-dynamics-based umbrella sampling method to determine potentials of mean force for 20 single amino acids near the ZnS (110) surface in aqueous solutions. We find that five amino acids do not bind at all and the binding energy of the remaining amino acids does not exceed 4.3 kJ/mol. Such energies are comparable to those found for ZnO (and to hydrogen bonds in proteins) but the nature of the specificity is different. Cysteine can bind with ZnS in a covalent way, e.g., by forming the disulfide bond with S in the solid. If this effect is included within a model incorporating the Morse potential, then the potential well becomes much deeperthe binding energy is close to 98 kJ/mol. We then consider tryptophan cage, a protein of 20 residues, and characterize its events of adsorption to ZnS. We demonstrate the relevance of interactions between the amino acids in the selection of optimal adsorbed conformations and recognize the key role of cysteine in generation of lasting adsorption. We show that ZnS is more hydrophobic than ZnO and that the density profile of water is quite different than that forming near ZnOit has only a minor articulation into layers. Furthermore, the first layer of water is disordered and mobile.

  3. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  4. Prolactin receptor attenuation induces zinc pool redistribution through ZnT2 and decreases invasion in MDA-MB-453 breast cancer cells

    SciTech Connect (OSTI)

    Bostanci, Zeynep; Alam, Samina; Soybel, David I.; Kelleher, Shannon L.

    2014-02-15

    Prolactin receptor (PRL-R) activation regulates cell differentiation, proliferation, cell survival and motility of breast cells. Prolactin (PRL) and PRL-R over-expression are strongly implicated in breast cancer, particularly contributing to tumor growth and invasion in the more aggressive estrogen-receptor negative (ER?) disease. PRL-R antagonists have been suggested as potential therapeutic agents; however, mechanisms through which PRL-R antagonists exert their actions are not well-understood. Zinc (Zn) is a regulatory factor for over 10% of the proteome, regulating critical cell processes such as proliferation, cell signaling, transcription, apoptosis and autophagy. PRL-R signaling regulates Zn metabolism in breast cells. Herein we determined effects of PRL-R attenuation on cellular Zn metabolism and cell function in a model of ER-, PRL-R over-expressing breast cancer cells (MDA-MB-453). PRL-R attenuation post-transcriptionally increased ZnT2 abundance and redistributed intracellular Zn pools into lysosomes and mitochondria. ZnT2-mediated lysosomal Zn sequestration was associated with reduced matrix metalloproteinase 2 (MMP-2) activity and decreased invasion. ZnT2-mediated Zn accumulation in mitochondria was associated with increased mitochondrial oxidation. Our results suggest that PRL-R antagonism in PRL-R over-expressing breast cancer cells may reduce invasion through the redistribution of intracellular Zn pools critical for cellular function. - Highlights: PRL-R attenuation increased ZnT2 expression. PRL-R attenuation increased lysosomal and mitochondrial Zn accumulation. PRL-R attenuation decreased MMP-2 and invasion. PRL-R antagonists may modulate lysosomal and mitochondrial Zn pools.

  5. Defect-induced magnetism in cobalt-doped ZnO epilayers

    SciTech Connect (OSTI)

    Ciatto, G.; Fonda, E.; Trolio, A. Di; Alippi, P.; Varvaro, G.; Bonapasta, A. Amore; Polimeni, A.; Capizzi, M.

    2014-02-21

    We used a synergic Co-edge X-ray absorption spectroscopy (XAS) and density functional theory calculations approach to perform a study of defects which could account for the room temperature ferromagnetism of ZnCoO, an oxide of great potential interest in semiconductor spintronics. Our results suggest that a key role is played by specific defect complexes in which O vacancies are located close to the Co atoms. Extended defects such as Co clusters have a marginal function, although we observe their formation at the epilayer surface under certain growth conditions. We also show preliminary results of the study of hydrogen-induced defects in ZnCoO epilayers deliberately hydrogen irradiated via a Kaufman source. Hydrogen was in fact predicted to mediate a ferromagnetic spin-spin interaction between neighboring magnetic impurities.

  6. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  7. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Venkatesh, S.; Baras, A.; Lee, J. -S.; Roqan, I. S.

    2016-03-24

    Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

  8. Compositional and Structural Study of Gd Implanted ZnO Films

    SciTech Connect (OSTI)

    Murmu, Peter P.; Kennedy, John V.; Markwitz, Andreas; Ruck, Ben J.

    2009-07-23

    We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550 deg. C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

  9. Density-functional Monte-Carlo simulation of CuZn order-disorder transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khan, Suffian N.; Eisenbach, Markus

    2016-01-25

    We perform a Wang-Landau Monte Carlo simulation of a Cu0.5Zn0.5 order-disorder transition using 250 atoms and pairwise atom swaps inside a 5 x 5 x 5 BCC supercell. Each time step uses energies calculated from density functional theory (DFT) via the all-electron Korringa-Kohn- Rostoker method and self-consistent potentials. Here we find CuZn undergoes a transition from a disordered A2 to an ordered B2 structure, as observed in experiment. Our calculated transition temperature is near 870 K, comparing favorably to the known experimental peak at 750 K. We also plot the entropy, temperature, specific-heat, and short-range order as a function ofmore » internal energy.« less

  10. Synthesis and characterization of Cr-doped ZnO nanorod-array photocatalysts with improved activity

    SciTech Connect (OSTI)

    Chang, Chi-Jung Yang, Tsung-Lin; Weng, Yu-Ching

    2014-06-01

    Immobilized photocatalysts with high catalytic activity under UV light were prepared by growing Cr-doped ZnO nanorods on glass substrates by a hydrothermal method. The effects of Cr dopant on the surface texture, crystallinity, surface chemistry, and photoinduced charge separation and their relation with the photocatalytic degradation of Cr-doped ZnO were investigated by scanning electron microscopy, diffuse reflectance spectra, photoelectrochemical scanning electrochemical microscopy, and X-ray photoemission spectroscopy. Adding the appropriate amount of Cr dopant is a powerful way to enhance the separation of charge carriers in ZnO photocatalyst. The photocatalytic activity was improved due to the increase in surface oxygen vacancies, the separation of charge carriers, modification of the band gap, and the large surface area of the doped ZnO nanorod photocatalyst. - Graphical abstract: Photoinduced charge separation and its relation with the photocatalytic degradation activity of Cr-doped ZnO were investigated by photoelectrochemical scanning electrochemical microscopy. - Highlights: Cr dopant enhances separation of charge carries in ZnO nanorod photocatalyst. Photoinduced charge carries separation monitored by PEC-SECM. The higher the photocurrent is, the higher the photocatalytic activity is. Degradation of DB86 dye solutions under visible light finished within 50 min. Higher activity due to more oxygen vacancy, tuned band gap and more surface area.

  11. Photocatalytic reduction of aqueous mercury(II) using multi-walled carbon nanotubes/Pd-ZnO nanocomposite

    SciTech Connect (OSTI)

    Mohamed, R.M.; Abdel Salam, Mohamed

    2014-02-01

    Highlights: MWCNT/Pd-ZnO were used for photocatalytic reduction of Hg{sup 2+}. Photocatalytic reduction of Hg{sup 2+} was dependent on wt% of MWCNT, reaction time, and weight of catalyst. Catalyst re-use revealed the present photocatalyst remain effective and active after five, cycles. - Abstract: Pd-ZnO nanocatalyst supported on multi-walled carbon nanotubes was successfully synthesized via a modified solgel method, and the prepared photocatalyst was used for the environmental remediation of aqueous Hg(II) via photocatalytic reduction under visible light. The prepared MWCNTs/Pd/ZnO nanocomposite photocatalyst was characterized using X-ray diffraction, BrunauerEmmettTeller (BET), transmission electron microscopy, and UVvis spectra (UVvis). The results showed that both Pd and ZnO nanoparticles were well dispersed over the MWCNTs, and a uniform nanocomposite was formed. The results also illustrated that Pd doping can eliminate the recombination of electron-hole pairs in the catalyst, and the presence of MWCNTs in ZnO composite can change surface properties to achieve sensitivity to visible light. The results demonstrated that optimum mass ratio of CNT:ZnO:Pd were 0.04:1.0:0.08, which resulted in the exceptional performance of the photocatalyst to reduce about 100% of Hg(II) in a 100 mg L solution within 30 min.

  12. Anisotropic hot deformed magnets prepared from Zn-coated MRE-Fe-B ribbon powder (MRE?=?Nd?+?Y?+?Dy)

    SciTech Connect (OSTI)

    Tang, W; Zhou, L; Sun, K W; Dennis, K W; Kramer, M J; Anderson, I E; McCallum, R W

    2014-05-07

    Milled melt-spun ribbon flake of MRE-Fe-B coated with Zn coating using a vapor transport technique was found to have significant increase in coercivity without degrading the magnetization when the Zn thickness and heat treatment were optimized. Magnetic measurements show that 0.51?wt.?% Zn coating increases the coercivity about 1?kOe over the initial ribbon powder. After vacuum hot deformation (VHD), the VHD magnet with Zn coating of 0.5?wt.?% results in a nearly 3?kOe higher coercivity than an un-coated alloy magnet. An optimized VHD magnet with 0.5?wt.?% Zn coating obtains a coercivity of 11.2?kOe and (BH)max of 23.0 MGOe, respectively. SEM and TEM microstructures analysis demonstrates that the Zn coating on the surface of ribbon powder has diffused along the intergranular boundaries after the ribbon powder was annealed at 750?C for 30?min or was hot deformed at 700750?C.

  13. Effect of surface adsorption and non-stoichiometry on the workfunction of ZnO surfaces: A first principles study

    SciTech Connect (OSTI)

    Sun, Wei; Li, Yun; Jha, Jitendra Kumar; Shepherd, Nigel D.; Du, Jincheng

    2015-04-28

    ZnO has been actively studied for potential usage as a transparent conducting oxide (TCO) for a variety of applications including organic light emitting diodes and solar cells. In these applications, fine-tuning the workfunction of ZnO is critical for controlling interfacial barriers and improving the charge injection (or outcoupling) efficiencies. We have performed plane wave periodic density functional theory calculations to investigate the effect of different surface absorbents and surface defects (including surface non-stoichiometry) on the workfunction of ZnO. The aim was to understand the underlying mechanism of workfunction changes, in order to engineer specific workfunction modifications. Accurate calculations of workfunctions of polar surfaces were achieved by introducing balancing pseudo charges on one side of the surface to remove the dipolar effect. It was found that increasing the surface coverage of hydrocarbons (-CH{sub 3}) decreased the workfunction, while adsorption of highly electronegative-F and -CF{sub 3} groups and increases in surface O/Zn ratio increased the workfunction of ZnO. The increase of workfunction was found to be directly correlated to the enhancement variation of surface dipole moment due to adsorptions or other surface modifications. Introducing surface absorbents that increase surface dipole moment can be an effective way to increase workfunction in ZnO TCOs.

  14. Nature of red luminescence band in research-grade ZnO single crystals: A self-activated configurational transition

    SciTech Connect (OSTI)

    Chen, Y. N.; Xu, S. J. Zheng, C. C.; Ning, J. Q.; Ling, F. C. C.; Anwand, W.; Brauer, G.; Skorupa, W.

    2014-07-28

    By implanting Zn{sup +} ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zn{sub i}) and O vacancies (V{sub O}) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ?2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low kick out thermal energy and small thermal quenching energy. A self-activated optical transition between a shallow donor and the defect center of Zn{sub i}-V{sub O} complex or V{sub Zn}V{sub O} di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

  15. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  16. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    SciTech Connect (OSTI)

    Vlasenko, N. A. Oleksenko, P. F.; Mukhlyo, M. A.; Veligura, L. I.

    2013-08-15

    The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr concentration of {approx}4 Multiplication-Sign 10{sup 20} cm{sup -3}) upon lasing ({lambda} Almost-Equal-To 2.6 {mu}m) and that induce lasing cessation are studied. It is established that lasing ceases because of light-scattering inhomogeneities formed in the structure and, hence, optical losses enhance. The origin of the inhomogeneities and the causes of their formation are clarified by studying the surface topology and the crystal structure of constituent layers of the samples before and after lasing. The studies are performed by means of atomic force microscopy and X-ray radiography. It is shown that a substantial increase in the sizes of grains on the surface of the structure is the manifestation of changes induced in the ZnS:Cr film by recrystallization. Recrystallization is initiated by local heating by absorbed laser radiation in existing Cr clusters and quickened by a strong electric field (>1 MV cm{sup -1}). The changes observed in the ZnS:Cr film are as follows: the textured growth of ZnS crystallites, an increase in the content of Cr clusters, and the appearance of some CrS and a rather high ZnO content. Some ways for improving the stability of lasing in the ZnS:Cr-based waveguide structures are proposed.

  17. Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

    SciTech Connect (OSTI)

    Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya; Rogl, Peter; Bednar, Ingeborg; Bauer, Ernst

    2010-10-15

    Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.

  18. -delayed ?-proton decay in ??Zn: Analysis of the charged-particle spectrum

    SciTech Connect (OSTI)

    Orrigo, S. E.A.; Rubio, B.; Fujita, Y.; Blank, B.; Agramunt, J.; Algora, A.; Ascher, P.; Cceres, L.; Cakirli, R. B.; Fujita, H.; Ganio?lu, E.; Gerbaux, M.; Kozer, H. C.; Kucuk, L.; Kurtukian-Nieto, T.; Popescu, L.; Rogers, A. M.; Susoy, G.; Stodel, C.; Suzuki, T.; Tamii, A.; Thomas, J. C.

    2015-01-01

    A study of the ? decay of the proton-rich Tz = 2 nucleus ??Zn has been reported in a recent publication. A rare and exotic decay mode, ?-de-layed ?-proton decay, has been observed there for the first time in the fp shell. Here, we expand on some of the details of the data analysis, focusing on the charged particle spectrum.

  19. Removal of Zn or Cd and cyanide from cyanide electroplating wastes

    DOE Patents [OSTI]

    Moore, Fletcher L.

    1977-05-31

    A method is described for the efficient stripping of stable complexes of a selected quaternary amine and a cyanide of Zn or Cd. An alkali metal hydroxide solution such as NaOH or KOH will quantitatively strip a pregnant extract of the quaternary ammonium complex of its metal and cyanide content and regenerate a quaternary ammonium hydroxide salt which can be used for extracting further metal cyanide values.

  20. Magnetic fields and fluctuations in weakly Mn doped ZnGeP{sub 2}

    SciTech Connect (OSTI)

    Mengyan, P. W.; Lichti, R. L.; Baker, B. B.; Celebi, Y. G.; Catak, E.; Carroll, B. R.; Zawilski, K. T.; Schunemann, P. G.

    2014-02-21

    We report on our measurements of local and bulk magnetic features in weakly Mn doped ZnGeP{sub 2}. Utilizing muon spin rotation and relaxation measurements, we identify local ferromagnetic order and fluctuations in the local fields as sampled by an implanted muon (?{sup +}). We also report on field induced ferromagnetism occurring above the claimed paramagnetic to ferromagnetic transition temperature (T{sub c} = 312 K)

  1. Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

    SciTech Connect (OSTI)

    Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

    2011-11-15

    This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

  2. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect (OSTI)

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  3. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-07-21

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4?V) at low operating voltage (6/?6?V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E???5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  4. Characterization of ZnO-degraded varistors used in high-tension devices

    SciTech Connect (OSTI)

    Ramirez, M.A.; Maniette, Y.

    2007-06-05

    The effects of the degradation process on the structural, microstructural and electrical properties of ZnO-based varistors were analyzed. Rietveld refinement showed that the BiO{sub 2-x} phase is affected by the degradation process. Besides the changes in the spinel phase, the degradation process also affects the lattice microstrain in the ZnO phase. Scanning electron microscopy analysis showed electrode-melting failure, while wavelength dispersive X-ray spectroscopy qualitative analysis showed deficiency of oxygen species at the grain boundaries in the degraded samples. Atomic force microscopy using electrostatic mode force illustrated a decrease in the charge density at the grain boundaries of the degraded sample. Transmission electron microscopy showed submicrometric spinel grains embedded in a ZnO matrix, but their average grain size is smaller in the degraded sample than in the standard one. Long pulses appeared to be more harmful for the varistors' properties than short ones, causing higher leakage current values. The electrical characteristics of the degraded sample are partially restored after heat treatment in an oxygen-rich atmosphere.

  5. Thermal evaporation and condensation synthesis of metallic Zn layered polyhedral microparticles

    SciTech Connect (OSTI)

    Khan, Waheed S.; Cao, Chuanbao; Usman, Zahid; Hussain, Sajad; Nabi, Ghulam; Butt, Faheem K.; Ali, Zulfiqar; Mahmood, Tariq; Niaz, Niaz Ahmad

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Zn polyhedral microparticles prepared by thermal evaporation and condensation route. Black-Right-Pointing-Pointer Vapour-solid process based growth model governs the formation of Zn microparticles. Black-Right-Pointing-Pointer A strong PL emission band is observed at 369 nm in UV region. Black-Right-Pointing-Pointer Radiative recombination of electrons in the s, p conduction band and the holes in the d bands causes this emission. -- Abstract: Metallic zinc layered polyhedral microparticles have been fabricated by thermal evaporation and condensation technique using zinc as precursor at 750 Degree-Sign C for 120 min and NH{sub 3} as a carrier gas. The zinc polyhedral microparticles with oblate spherical shape are observed to be 2-9 {mu}m in diameter along major axes and 1-7 {mu}m in thickness along minor axes. The structural, compositional and morphological characterizations were performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). A vapour-solid (VS) mechanism based growth model has been proposed for the formation of Zn microparticles. Room temperature photoluminescence (PL) emission spectrum of the product exhibited a strong emission band at 369 nm attributed to the radiative recombination of electrons in the s, p conduction band near Fermi surface and the holes in the d bands generated by the optical excitation.

  6. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes

    SciTech Connect (OSTI)

    Velikanov, S D; Zaretskiy, N A; Zotov, E A; Maneshkin, A A; Chuvatkin, R S; Yutkin, I M; Kozlovsky, V I; Korostelin, Yu V; Krokhin, O N; Podmar'kov, Yu P; Savinova, S A; Skasyrsky, Ya K; Frolov, M P

    2015-01-31

    The characteristics of a Fe:ZnSe laser pumped by a single-pulse free-running Er : YAG laser and a repetitively pulsed HF laser are presented. An output energy of 4.9 J is achieved in the case of liquid-nitrogen cooling of the Fe{sup 2+}:ZnSe active laser element longitudinally pumped by an Er:YAG laser with a pulse duration of 1 ms and an energy up to 15 J. The laser efficiency with respect to the absorbed energy is 47%. The output pulse energy at room temperature is 53 mJ. The decrease in the output energy is explained by a strong temperature dependence of the upper laser level lifetime and by pulsed heating of the active element. The temperature dependence of the upper laser level lifetime is used to determine the pump parameters needed to achieve high pulse energies at room temperature. Stable repetitively-pulsed operation of the Fe{sup 2+}:ZnSe laser at room temperature with an average power of 2.4 W and a maximum pulse energy of 14 mJ is achieved upon pumping by a 1-s train of 100-ns HF laser pulses with a repetition rate of 200 Hz. (lasers)

  7. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10, photoresponsivity of 5.0410A/W, and photocurrent gain of 1.910, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  8. Properties of nitrogen implanted and electron beam annealed bulk ZnO

    SciTech Connect (OSTI)

    Kennedy, J.; Carder, D. A.; Markwitz, A.; Reeves, R. J.

    2010-05-15

    The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at {approx}3.09 eV in the nitrogen implanted with 1-2x10{sup 15} ions cm{sup -2} and EB annealed at 800-900 deg. C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.

  9. Oxidation of palladium on Au(111) and ZnO(0001) supports

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lallo, J.; Tenney, S. A.; Kramer, A.; Sutter, P.; Batzill, M.

    2014-10-21

    The oxidation of supported Pd-deposits on Au(111) and ZnO(0001) single crystals has been studied by x- ray photoemission spectroscopy (XPS). Oxidation has been carried out ex-situ in a high-pressure cell with subsequent vacuum-transfer and characterization by XPS in ultrahigh vacuum (UHV), as well as using in-situ characterization by synchrotron based near-ambient pressure XPS. On Au(111) alloying of Pd with the substrate competes with oxidation and only sufficiently thick Pd films have been found to oxidize. For Pd on ZnO the oxidation conditions depend on the amount of deposited Pd. Thicker Pd deposits behave similar to bulk Pd, while thinner filmsmore » oxidize already at lower temperatures. Interestingly, for very small amounts of Pd, in-situ XPS shows full oxidation at room temperature and at less than 0.6 mbar O₂ pressure. This indicates a lowering of the kinetic barriers for oxidation of very small supported Pd-clusters. The formed oxide is, however, not stable in UHV and a slow reduction is observed. The instability of this oxide indicates that the Pd-oxide formed at the interface to ZnO may have different chemical properties compared to bulk PdO or surface oxides on Pd.« less

  10. Oxidation of palladium on Au(111) and ZnO(0001) supports

    SciTech Connect (OSTI)

    Lallo, J.; Tenney, S. A.; Kramer, A.; Sutter, P.; Batzill, M.

    2014-10-21

    The oxidation of supported Pd-deposits on Au(111) and ZnO(0001) single crystals has been studied by x- ray photoemission spectroscopy (XPS). Oxidation has been carried out ex-situ in a high-pressure cell with subsequent vacuum-transfer and characterization by XPS in ultrahigh vacuum (UHV), as well as using in-situ characterization by synchrotron based near-ambient pressure XPS. On Au(111) alloying of Pd with the substrate competes with oxidation and only sufficiently thick Pd films have been found to oxidize. For Pd on ZnO the oxidation conditions depend on the amount of deposited Pd. Thicker Pd deposits behave similar to bulk Pd, while thinner films oxidize already at lower temperatures. Interestingly, for very small amounts of Pd, in-situ XPS shows full oxidation at room temperature and at less than 0.6 mbar O? pressure. This indicates a lowering of the kinetic barriers for oxidation of very small supported Pd-clusters. The formed oxide is, however, not stable in UHV and a slow reduction is observed. The instability of this oxide indicates that the Pd-oxide formed at the interface to ZnO may have different chemical properties compared to bulk PdO or surface oxides on Pd.

  11. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect (OSTI)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  12. Influence of valence electron concentration on Laves phases: Structures and phase stability of pseudo-binary MgZn2-xPdx

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thimmaiah, Srinivasa; Miller, Gordon J.

    2015-06-03

    A series of pseudo-binary compounds MgZn2-xPdx (0.15 ≤ x ≤ 1.0) were synthesized and structurally characterized to understand the role of valence electron concentration (vec) on the prototype Laves phase MgZn2 with Pd-substitution. Three distinctive phase regions were observed with respect to Pd content, all exhibiting fundamental Laves phase structures: 0.1 ≤ x ≤ 0.3 (MgNi2-type, hP24; MgZn1.80Pd0.20(2)), 0.4 ≤ x ≤ 0.6 (MgCu2-type, cF24; MgZn1.59Pd0.41(2)), and 0.62 ≤ x ≤ 0.8 (MgZn2-type, hP12: MgZn1.37Pd0.63(2)). Refinements from single-crystal X-ray diffraction indicated nearly statistical distributions of Pd and Zn atoms among the majority atom sites in these structures. Interestingly, the MgZn2-typemore » structure re-emerges in MgZn2–xPdx at x ≈ 0.7 with the refined composition MgZn1.37(2)Pd0.63 and a c/a ratio of 1.59 compared to 1.64 for binary MgZn2. Electronic structure calculations on a model “MgZn1.25Pd0.75” yielded a density of states (DOS) curve showing enhancement of a pseudogap at the Fermi level as a result of electronic stabilization due to the Pd addition. Moreover, integrated crystal orbital Hamilton population values show significant increases of orbital interactions for (Zn,Pd)–(Zn,Pd) atom pairs within the majority atom substructure, i.e., within the Kagomé nets as well as between a Kagomé net and an apical site, from binary MgZn2 to the ternary “MgZn1.25Pd0.75”. Multi-centered bonding is evident from electron localization function plots for “MgZn1.25Pd0.75”, an outcome which is in accordance with analysis of other Laves phases.« less

  13. Influence of valence electron concentration on Laves phases: Structures and phase stability of pseudo-binary MgZn2-xPdx

    SciTech Connect (OSTI)

    Thimmaiah, Srinivasa; Miller, Gordon J.

    2015-06-03

    A series of pseudo-binary compounds MgZn2-xPdx (0.15 ? x ? 1.0) were synthesized and structurally characterized to understand the role of valence electron concentration (vec) on the prototype Laves phase MgZn2 with Pd-substitution. Three distinctive phase regions were observed with respect to Pd content, all exhibiting fundamental Laves phase structures: 0.1 ? x ? 0.3 (MgNi2-type, hP24; MgZn1.80Pd0.20(2)), 0.4 ? x ? 0.6 (MgCu2-type, cF24; MgZn1.59Pd0.41(2)), and 0.62 ? x ? 0.8 (MgZn2-type, hP12: MgZn1.37Pd0.63(2)). Refinements from single-crystal X-ray diffraction indicated nearly statistical distributions of Pd and Zn atoms among the majority atom sites in these structures. Interestingly, the MgZn2-type structure re-emerges in MgZn2xPdx at x ? 0.7 with the refined composition MgZn1.37(2)Pd0.63 and a c/a ratio of 1.59 compared to 1.64 for binary MgZn2. Electronic structure calculations on a model MgZn1.25Pd0.75 yielded a density of states (DOS) curve showing enhancement of a pseudogap at the Fermi level as a result of electronic stabilization due to the Pd addition. Moreover, integrated crystal orbital Hamilton population values show significant increases of orbital interactions for (Zn,Pd)(Zn,Pd) atom pairs within the majority atom substructure, i.e., within the Kagom nets as well as between a Kagom net and an apical site, from binary MgZn2 to the ternary MgZn1.25Pd0.75. Multi-centered bonding is evident from electron localization function plots for MgZn1.25Pd0.75, an outcome which is in accordance with analysis of other Laves phases.

  14. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    SciTech Connect (OSTI)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.

  15. The new barium zinc mercurides Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} - Synthesis, crystal and electronic structure

    SciTech Connect (OSTI)

    Schwarz, Michael; Wendorff, Marco; Roehr, Caroline

    2012-12-15

    The title compounds Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba{sub 3}ZnHg{sub 10} (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4{sup 4} Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl{sub 4}. The flat pyramids are connected via Hg-Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M-M distances (273-301 pm; CN 9-11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317-348 pm) to their Zn/Hg neighbours. In the structure of BaZn{sub 0.6}Hg{sub 3.4} (cubic, cI320, space group I4{sup Macron }3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba{sub 3}ZnHg{sub 10}, the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4 Multiplication-Sign 4 Multiplication-Sign 4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6){sub 4} with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4){sub 2} dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb{sub 3}Hg{sub 20} applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic (as obtained from FP-LAPW band structure calculations) and the coordination number of 16 for all Ba cations relate the two title compounds. - Graphical abstract: Six of the 64 small sub-cubes of three types (A, B, C) forming the unit cell of the Hg-rich mercuride BaZn{sub 0.6}Hg{sub 3.4}. Highlights: Black-Right-Pointing-Pointer Two new Hg-rich Ba mercurides, both synthesized from the elements in pure phase. Black-Right-Pointing-Pointer BaZn{sub 0.6}HgG{sub 3.4} and Ba{sub 3}ZnHg{sub 10} with new complex structure types. Black-Right-Pointing-Pointer Structure relation to other complex cubic intermetallics. Black-Right-Pointing-Pointer Discussion of covalent and metallic bonding aspects, as found by the structure features and band structure calculations.

  16. Enhanced T-lymphocyte blastogenic response to tuberculin (PPD) in children of northeast (NE) Thailand supplemented with vitamin A (VA) and zinc (Zn)

    SciTech Connect (OSTI)

    Kramer, T.R.; Udomkesmalee, E.; Dhanamitta, S.; Sirisinha, S.; Charoenkiatkul, S.; Tantipopipat, S.; Banjong, O.; Rojroongwasinkul, N.; Smith, J.C. Jr. Mahidol Univ., Nakhon Pathom )

    1991-03-15

    Beneficial effects of Va and/or Zn supplementation of children in NE Thailand are described in a companion abstract. In the same study, blastogenic response (BR) of T-lymphocytes to concanavalin-A (ConA) and PPD were assayed in cultures containing mononuclear cells (MNC) or whole blood (WB). Methods were previously described. Children were previously vaccinated with BCG. BR to ConA of MNC or WB from children supplemented with VA, Zn, VA + Zn or placebo were similar. BR to PPD of MNC was higher in children receiving VA + Zn than placebo, but not in children supplemented with VA or Zn alone. Data indicate that children with suboptimal VA and Zn nutriture supplemented with < 2 times RDA of these nutrients showed enhanced cellular immunity to PPD. This observation is relevant to BCG immunization program and thus may benefit public health.

  17. Synthesis of methanol and dimethyl ether from syngas over Pd/ZnO/Al2O3 catalysts

    SciTech Connect (OSTI)

    Lebarbier, Vanessa M.; Dagle, Robert A.; Kovarik, Libor; Lizarazo-Adarme, Jair A.; King, David L.; Palo, Daniel R.

    2012-01-01

    A Pd/ZnO/Al2O3 catalyst was developed for the synthesis of methanol and dimethyl ether (DME) from syngas. Studied were temperatures of operation ranging from 250C to 380C. High temperatures (e.g. 380C) are necessary when combining methanol and DME synthesis with a methanol to gasoline (MTG) process in a single reactor bed. A commercial Cu/ZnO/Al2O3 catalyst, utilized industrially for the synthesis of methanol at 220-280C, suffers from a rapid deactivation when the reaction is conducted at high temperature (>320C). On the contrary, a Pd/ZnO/Al2O3 catalyst was found to be highly stable for methanol and DME synthesis at 380C. The Pd/ZnO/Al2O3 catalyst was thus further investigated for methanol and DME synthesis at P=34-69 bars, T= 250-380C, GHSV= 5 000-18 000 h-1, and molar feeds H2/CO= 1, 2, and 3. Selectivity to DME increased with decreasing operating temperature, and increasing operating pressure. Increased GHSVs and H2/CO syngas feed ratios also enhanced DME selectivity. Undesirable CH4 formation was observed, however, can be minimized through choice of process conditions and by catalyst design. By studying the effect of the Pd loading and the Pd:Zn molar ratio the formulation of the Pd/ZnO/Al2O3 catalyst was optimized. A catalyst with 5% Pd and a Pd:Zn molar ratio of 0.25:1 has been identified as the preferred catalyst. Results indicate that PdZn particles are more active than Pd particles for the synthesis of methanol and less active for CH4 formation. A correlation between DME selectivity and the concentration of acid sites of the catalysts has been established. Hence, two types of sites are required for the direct conversion of syngas to DME: 1) PdZn particles are active for the synthesis of methanol from syngas, and 2) acid sites which are active for the conversion of methanol to DME. Additionally, CO2 formation was problematic as PdZn was found to be active for the water-gas-shift (WGS) reaction, under all the conditions evaluated.

  18. The effect of Cu/Zn molar ratio on CO{sub 2} hydrogenation over Cu/ZnO/ZrO{sub 2}/Al{sub 2}O{sub 3} catalyst

    SciTech Connect (OSTI)

    Shaharun, Salina E-mail: maizats@petronas.com.my; Shaharun, Maizatul S. E-mail: maizats@petronas.com.my; Taha, Mohd F.; Mohamad, Dasmawati

    2014-10-24

    Catalytic hydrogenation of carbon dioxide (CO{sub 2}) to methanol is an attractive way to recycle and utilize CO{sub 2}. A series of Cu/ZnO/Al{sub 2}O{sub 3}/ZrO{sub 2} catalysts (CZAZ) containing different molar ratios of Cu/Zn were prepared by the co-precipitation method and investigated in a stirred slurry autoclave system. The catalysts were characterized by temperature-programmed reduction (TPR), field emission scanning electron microscopy-energy dispersive analysis (FESEM-EDX), X-ray diffraction (XRD) and N{sub 2} adsorption-desorption. Higher surface area, SA{sub BET} values (42.659.9 m{sup 2}/g) are recorded at low (1) and high (5) Cu/Zn ratios with the minimum value of 35.71 m{sup 2}/g found for a Cu/Zn of 3. The reducibility of the metal oxides formed after calcination of catalyst samples was also affected due to change in metal-support interaction. At a low reaction temperature of 443 K, total gas pressure of 3.0 MPa and 0.1 g/mL of the CZAZ catalyst, the selectivity to methanol decreased as the Cu/Zn molar ratio increased, and the maximum selectivity of 67.73 was achieved at Cu/Zn molar ratio of 1. With a reaction time of 3h, the best performing catalyst was CZAZ75 with Cu/Zn molar ratio of 5 giving methanol yield of 79.30%.

  19. Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Hasoon, F. S.; Al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.

    2008-05-01

    This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.

  20. Synthesis of ZnO nanorodnanosheet composite via facile hydrothermal method and their photocatalytic activities under visible-light irradiation

    SciTech Connect (OSTI)

    Tan, Wai Kian; Abdul Razak, Khairunisak; Lockman, Zainovia; Kawamura, Go; Muto, Hiroyuki; Matsuda, Atsunori

    2014-03-15

    ZnO composite films consisting of ZnO nanorods and nanosheets were prepared by low-temperature hydrothermal processing at 80 C on seeded glass substrates. The seed layer was coated on glass substrates by solgel dip-coating and pre-heated at 300 C for 10 min prior to hydrothermal growth. The size of the grain formed after pre-heat treatment was ?40 nm. A preferred orientation seed layer at the c-axis was obtained, which promoted vertical growth of the ZnO nanorod arrays and formation of the ZnO nanosheets. X-ray diffraction patterns and high-resolution transmission electron microscope (HR-TEM) images confirmed that the ZnO nanorods and nanosheets consist of single crystalline and polycrystalline structures, respectively. Room temperature photoluminescence spectra of the ZnO nanorodnanosheet composite films exhibited band-edge ultraviolet (UV) and visible emission (blue and green) indicating the formation of ZnO crystals with good crystallinity and are supported by Raman scattering results. The formation of one-dimensional (1D) ZnO nanorod arrays and two-dimensional (2D) ZnO nanosheet films using seeded substrates in a single low-temperature hydrothermal step would be beneficial for realization of device applications that utilize substrates with limited temperature stability. The ZnO nanorods and nanosheets composite structure demonstrated higher photocatalytic activity during degradation of aqueous methylene blue under visible-light irradiation. -- Graphical abstract: Schematic illustration of ZnO nanorodnanosheet composite structure formation by hydrothermal at low-temperature of 80 C against time. Highlights: Novel simultaneous formation of ZnO nanorods and nanosheets composite structure. Facile single hydrothermal step formation at low-temperature. Photoluminescence showed ultraviolet and visible emission. Feasible application on substrates with low temperature stability. Improved photocatalytic activity under visible-light irradiation.

  1. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    SciTech Connect (OSTI)

    Shi, Zhiwei; Walker, Amy V.

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  2. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  3. Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices

    SciTech Connect (OSTI)

    Chang, Li-Chun; Kao, Hsuan-Ling; Liu, Keng-Hao

    2014-03-15

    ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher R{sub off}/R{sub on} ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrated that the Cr atoms lost electrons to become Cr{sup 3+} ions after dispersion. These results indicated that the altered status of Cr in ZnO/Cr/ZnO trilayer films during RTA treatment was responsible for the switching mechanism transition.

  4. Dual nature of 3 d electrons in YbT 2 Zn 20 (T = Co; Fe) evidenced by electron spin resonance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ivanshin, V. A.; Litvinova, T. O.; Gimranova, K.; Sukhanov, A. A.; Jia, S.; Bud'ko, S. L.; Canfield, P. C.

    2015-03-18

    The electron spin resonance experiments were carried out in the single crystals YbFe2Zn20. The observed spin dynamics is compared with that in YbCo2Zn20 and Yb2Co12P7 as well as with the data of inelastic neutron scattering and electronic band structure calculations. Our results provide direct evidence that 3d electrons are itinerant in YbFe2Zn20 and localized in YbCo2Zn20. Possible connection between spin paramagnetism of dense heavy fermion systems, quantum criticality effects, and ESR spectra is discussed.

  5. Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors

    SciTech Connect (OSTI)

    Akazawa, Housei

    2014-09-01

    The manner in which hydrogen atoms contribute to the electric conduction of undoped ZnO and Ga-doped ZnO (GZO) films was investigated. Hydrogen atoms were permeated into these films through annealing in an atmospheric H{sub 2} ambient. Because the creation of hydrogen donors competes with the thermal annihilation of native donors at elevated temperatures, improvements to electric conduction from the initial state can be observed when insulating ZnO films are used as samples. While the resistivity of conductive ZnO films increases when annealing them in a vacuum, the degree of increase is mitigated when they are annealed in H{sub 2}. Hydrogenation of ZnO crystals was evidenced by the appearance of OH absorption signals around a wavelength of 2700?nm in the optical transmittance spectra. The lowest resistivity that was achieved by H{sub 2} annealing was limited to 12??10{sup ?2} ? cm, which is one order of magnitude higher than that by native donors (23??10{sup ?3} ? cm). Hence, all native donors are converted to hydrogen donors. In contrast, GZO films that have resistivities yet to be improved become more conductive after annealing in H{sub 2} ambient, which is in the opposite direction of GZO films that become more resistive after vacuum annealing. Hydrogen atoms incorporated into GZO crystals should assist in reactivating Ga{sup 3+} donors.

  6. Visible light plasmonic heating of Au-ZnO for the catalytic reduction of CO{sub 2}

    SciTech Connect (OSTI)

    Wang, Congjun; Ranasingha, Oshadha; Natesakhawat, Sittichai; Ohodnicki, Paul R.; Ohodnicki, Andio, Mark; Lewis, James; P Matranga, Christopher

    2013-05-01

    Plasmonic excitation of Au nanoparticles attached to the surface of ZnO catalysts using low power 532 nm laser illumination leads to significant heating of the catalyst and the conversion of CO{sub 2} and H{sub 2} reactants to CH{sub 4} and CO products. Temperature-calibrated Raman spectra of ZnO phonons show that intensity-dependent plasmonic excitation can controllably heat AuZnO from 30 to #1;~600 {degrees}#3;C and simultaneously tune the CH{sub 4} : CO product ratio. The laser induced heating and resulting CH{sub 4} : CO product distribution agrees well with predictions from thermodynamic models and temperatureprogrammed reaction experiments indicating that the reaction is a thermally driven process resulting from the plasmonic heating of the AuZnO. The apparent quantum yield for CO{sub 2} conversion under continuous wave (cw) 532 nm laser illumination is 0.030%. The AuZnO catalysts are robust and remain active after repeated laser exposure and cycling. The light intensity required to initiate CO{sub 2} reduction is low (#1;~2.5 x#4; 10{sup 5} W m{sup #5;-2}) and achievable with solar concentrators. Our results illustrate the viability of plasmonic heating approaches for CO{sub 2} utilization and other practical thermal catalytic applications.

  7. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect (OSTI)

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R?=?I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  8. Microstructure evolution of Al/Mg butt joints welded by gas tungsten arc with Zn filler metal

    SciTech Connect (OSTI)

    Liu Fei; Zhang Zhaodong; Liu Liming, E-mail: liulm@dlut.edu.cn

    2012-07-15

    Based on the idea of alloying welding seam, Gas tungsten arc welding method with pure Zn filler metal was chosen to join Mg alloy and Al alloy. The microstructures, phases, element distribution and fracture morphology of welding seams were examined. The results indicate that there was a transitional zone in the width of 80-100 {mu}m between the Mg alloy substrate and fusion zone. The fusion zone was mainly composed of MgZn{sub 2}, Zn-based solid solution and Al-based solid solution. The welding seam presented distinct morphology in different location owning to the quite high cooling rate of the molten pool. The addition of Zn metal could prevent the formation of Mg-Al intermetallics and form the alloyed welding seam during welding. Therefore, the tensile strengths of joints have been significantly improved compared with those of gas tungsten arc welded joints without Zn metal added. Highlights: Black-Right-Pointing-Pointer Mg alloy AZ31B and Al alloy 6061 are welded successfully. Black-Right-Pointing-Pointer Zinc wire is employed as a filler metal to form the alloyed welding seam. Black-Right-Pointing-Pointer An alloyed welding seam is benefit for improving of the joint tensile strength.

  9. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation

    SciTech Connect (OSTI)

    Azarang, Majid, E-mail: azarangmajid@gmail.com, E-mail: azarang@phys.usb.ac.ir [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, University of Sistan and Baluchestan, 98135-674 Zahedan (Iran, Islamic Republic of); Shuhaimi, Ahmad; Sookhakian, M. [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yousefi, Ramin, E-mail: Yousefi.ramin@gmail.com, E-mail: raminyousefi@iaumis.ac.ir [Department of Physics, Masjed-Soleiman Branch, Islamic Azad University (I.A.U), Masjed-Soleiman (Iran, Islamic Republic of)

    2014-08-28

    The effects of different concentrations of graphene oxide (GO) on the structure and optical properties of ZnO nanoparticles (NPs) were investigated. The nanocomposites were synthesized via the sol-gel method in a gelatin medium. X-ray diffraction patterns (XRD) and Fourier transform infrared spectroscopy indicated that the GO sheets were reduced and changed to reduced GO (RGO) during the calcination of the nanocomposites at 400?C. In addition, the XRD patterns of the NPs indicated a hexagonal (wurtzite) structure for all the products. Microscopic studies showed that the NPs were decorated and dispersed on the RGO sheets very well. However, these studies revealed that the RGO concentration had an effect on the crystal growth process for the ZnO NPs. Furthermore, these studies showed that the NPs could be grown with a single crystal quality in an optimum RGO concentration. According to the XRD results that were obtained from pure ZnO NPs, the calcinations temperature was decreased by the RGO. UVvis and room temperature photoluminescence studies showed that the optical properties of the ZnO/RGO nanocomposite were affected by the RGO concentration. Finally, the obtained ZnO/RGO nanocomposite was used to generate a photocurrent. Observations showed that the photocurrent intensity of the nanocomposite was significantly increased by increasing the RGO, with an optimum RGO concentration.

  10. MoS{sub 2}@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties

    SciTech Connect (OSTI)

    Tan, Ying-Hua; Yu, Ke Li, Jin-Zhu; Fu, Hao; Zhu, Zi-Qiang

    2014-08-14

    The molybdenum disulfide (MoS{sub 2})@ZnO nano-heterojunctions were successfully fabricated through a facile three-step synthetic process: prefabrication of the ZnO nanoparticles, the synthesis of MoS{sub 2} nanoflowers, and the fabrication of MoS{sub 2}@ZnO heterojunctions, in which ZnO nanoparticles were uniformly self-assembled on the MoS{sub 2} nanoflowers by utilizing polyethyleneimine as a binding agent. The photocatalytic activities of the composite samples were evaluated by monitoring the photodegradation of methylene blue (MB). Compared with pure MoS{sub 2} nanoflowers, the composites show higher adsorption capability in dark and better photocatalytic efficiency due to the increased specific surface area and improved electron-hole pair separation. After irradiation for 100?min, the remaining MB in solution is about 7.3%. Moreover, the MoS{sub 2}@ZnO heterojunctions possess enhanced field emission properties with lower turn-on field of 3.08?V ?m{sup ?1}and lower threshold field of 6.9?V ?m{sup ?1} relative to pure MoS{sub 2} with turn-on field of 3.65?V ?m{sup ?1} and threshold field of 9.03?V ?m{sup ?1}.

  11. Magnetic properties of GdT2Zn20 (T = Fe, Co) investigated by x-ray diffraction and spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    J. R. L. Mardegan; Fabbris, G.; Francoual, S.; Veiga, L. S. I.; Strempfer, J.; Haskel, D.; Ribeiro, R. A.; Avila, M. A.; Giles, C.

    2016-01-26

    In this study, we investigate the magnetic and electronic properties of the GdT2Zn20 (T=Fe and Co) compounds using x-ray resonant magnetic scattering (XRMS), x-ray absorption near-edge structure (XANES), and x-ray magnetic circular dichroism (XMCD). The XRMS measurements reveal that GdCo2Zn20 has a commensurate antiferromagnetic spin structure with a magnetic propagation vector →/τ = (12,12,12) below the Néel temperature (TN ~ 5.7 K). Only the Gd ions carry a magnetic moment forming an antiferromagnetic structure with magnetic representation Γ6. For the ferromagnetic GdFe2Zn20 compound, an extensive investigation was performed at low temperature and under magnetic field using XANES and XMCD. Amore » strong XMCD signal of about 12.5% and 9.7% is observed below the Curie temperature (TC ~ 85K) at the Gd L2 and L3 edges, respectively. In addition, a small magnetic signal of about 0.06% of the jump is recorded at the Zn K edge, suggesting that the Zn 4p states are spin polarized by the Gd 5d extended orbitals.« less

  12. Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

    SciTech Connect (OSTI)

    Chen, Hong-Ming; Zhou, Ren-Wei; Li, Fei; University of Chinese Academy of Sciences, Beijing 100049 ; Liu, Xue-Chao Zhuo, Shi-Yi; Shi, Er-Wei; Xiong, Ze

    2014-04-15

    Zn{sub 1-x}Er{sub x}O (0.005 ? x ? 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. Ferromagnetism, crystal structure, microstructure and photoluminescence properties of the films were characterized. It is found that the chemical valence state of Er is trivalent, and the Er{sup 3+} cations play an important role in ferromagnetism. Both saturated magnetization (M{sub s}) and zinc vacancy (V{sub Zn}) are decreased with the increase of x from 0.005 to 0.03. However, further increasing x to 0.04, the M{sub s} is quenched due to the generation of Er clusters. It reveals that the intensity of M{sub s} is not only associated with the V{sub Zn} concentration, but also related to the Er clusters. The V{sub Zn} concentration and the Er clusters can jointly boost the ferromagnetism in the Zn{sub 1-x}Er{sub x}O thin films.

  13. Comparative Study of the Defect Point Physics and Luminescence of the Kesterites Cu2ZnSnS4 and Cu2ZnSnSe4 and Chalcopyrite Cu(In,Ga)Se2: Preprint

    SciTech Connect (OSTI)

    Romero, M. J.; Repins, I.; Teeter, G.; Contreras, M.; Al-Jassim, M.; Noufi, R.

    2012-08-01

    In this contribution, we present a comparative study of the luminescence of the kesterites Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) and their related chalcopyrite Cu(In,Ga)Se2 (CIGSe). Luminescence spectroscopy suggests that the electronic properties of Zn-rich, Cu-poor kesterites (both CZTS and CZTSe) and Cu-poor CIGSe are dictated by fluctuations of the electrostatic and chemical potentials. The large redshift in the luminescence of grain boundaries in CIGSe, associated with the formation of a neutral barrier is clearly observed in CZTSe, and, to some extent, in CZTS. Kesterites can therefore replicate the fundamental electronic properties of CIGSe.

  14. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    SciTech Connect (OSTI)

    Johnson, Raegan Lynn

    2005-08-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  15. Ab initio study of the structural, electronic and optical properties of ZnTe compound

    SciTech Connect (OSTI)

    Bahloul, B.; Deghfel, B.; Amirouche, L.; Bounab, S.; Bentabet, A.; Bouhadda, Y.; Fenineche, N.

    2015-03-30

    Structural, electronic and optical properties of ZnTe compound were calculated using Density Functional Theory (DFT) based on the pseudopotentials and planewaves (PP-PW) method as implemented in the ABINIT computer code, where the exchangecorrelation functional is approximated using the local density approximation (LDA) and the generalized gradient approximation (GGA). The obtained results from either LDA or GGa calculation for lattice parameter, energy band gap and optical parameters, such as the fundamental absorption edge, the peaks observed in the imaginary part of the dielectric function, the macroscopic dielectric constants and the optical dielectric constant, are compared with the available theoretical results and experimental data.

  16. Microsized structures assisted nanostructure formation on ZnSe wafer by femtosecond laser irradiation

    SciTech Connect (OSTI)

    Wang, Shutong; Feng, Guoying E-mail: zhoush@scu.edu.cn

    2014-12-22

    Micro/nano patterning of ZnSe wafer is demonstrated by femtosecond laser irradiation through a diffracting pinhole. The irradiation results obtained at fluences above the ablation threshold are characterized by scanning electron microscopy. The microsized structure with low spatial frequency has a good agreement with Fresnel diffraction theory. Laser induced periodic surface structures and laser-induced periodic curvelet surface structures with high spatial frequency have been found on the surfaces of microsized structures, such as spikes and valleys. We interpret its formation in terms of the interference between the reflected laser field on the surface of the valley and the incident laser pulse.

  17. Si/ZnO nanorods/Ag/AZO structures as promising photovoltaic plasmonic cells

    SciTech Connect (OSTI)

    Placzek-Popko, E. Gwozdz, K.; Gumienny, Z.; Zielony, E.; Jacak, W.; Pietruszka, R.; Witkowski, B. S.; Wachnicki, ?.; Gieraltowska, S.; Chang, Liann-Be

    2015-05-21

    The test structures for photovoltaic (PV) applications based on zinc oxide nanorods (NRs) that were grown using a low-temperature hydrothermal method on p-type silicon substrates (100) covered with Ag nanoparticles (NPs) were studied. The NPs of three different diameters, i.e., 510?nm, 20-30?nm, and 5060?nm, were deposited using a sputtering method. The morphology and crystallinity of the structures were confirmed by scanning electron microscopy and Raman spectroscopy. It was found that the nanorods have a hexagonal wurtzite structure. An analysis of the Raman and photoluminescence spectra permitted the identification of the surface modes at 476?cm{sup ?1} and 561?cm{sup ?1}. The presence of these modes is evidence of nanorods oriented along the wurtzite c-axis. The NRs with Ag NPs were covered with a ZnO:Al (AZO) layer that was grown using the low-temperature atomic layer deposition technique. The AZO layer served as a transparent ohmic contact to the ZnO nanorods. The applicability of the AZO layer for this purpose and the influence of the Ag nanoparticles on the effectiveness of light acquisition by such prepared PV cells were checked by reflectance and transmittance measurements of the AZO/glass and AZO/NPs/glass reference structures. Based on these studies, the high-energy transmittance edge was assigned to the ZnO energy gap, although it is blueshifted with respect to the bulk ZnO energy gap because of Al doping. It was also shown that the most optimal PV performance is obtained from a structure containing Ag nanoparticles with a diameter of 2030?nm. This result is confirmed by the current-voltage measurements performed with 1-sun illumination. The structures show a plasmonic effect within the short wavelength range: the PV response for the structure with Ag nanoparticles is twice that of the structure without the nanoparticles. However, the influence of the Ag nanoparticle diameters on the plasmonic effect is ambiguous.

  18. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect (OSTI)

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  19. Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

    SciTech Connect (OSTI)

    Garg, T. Kulkarni, A. R.; Venkataramani, N.; Sahu, B. N.; Prasad, Shiva

    2014-04-24

    In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150C to 650C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.

  20. Surface relief produced by diffusion induced boundary migration in Cu-Zn

    SciTech Connect (OSTI)

    Tsai, Y.S.; Meyrick, G.; Shewmon, P.G.

    1984-03-01

    Experimental observations are presented that demonstrate that diffusion induced grain boundary migration in copper foils exposed to zinc vapor, from a Cu-15 pct Zn alloy, can be studied directl after treatment without etching. The general characteristics of migration are in accord with previous investigations, but novel changes in the surface topography are described. Pits were formed on the surface of areas swept by boundary migration; also, the surface was often converted into a series of corrugations. The formation of pits suggests that the grain boundary diffusivity of zinc exceeds that of copper. The corrugations are believed to indicate that boundaries sometimes move in an intermittent manner.

  1. Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

    SciTech Connect (OSTI)

    Ruoho, Mikko Pale, Ville; Erdmanis, Mikhail; Tittonen, Ilkka

    2013-11-11

    We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.

  2. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  3. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    SciTech Connect (OSTI)

    Robertson, John; Guo, Yuzheng

    2014-04-21

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  4. Interband emission energy in wurtzite GaN/Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O strained quantum dots

    SciTech Connect (OSTI)

    Minimala, N. S.; Peter, A. John

    2014-04-24

    The effects of geometrical confinement on the exciton binding energies and thereby the interband emission energy are investigated in wurtzite /Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O quantum dots taking into account the geometrical confinement. The calculations are performed with the same barrier height of both the materials. The effects of strain and the internal electric field, induced by spontaneous and piezoelectric polarization, are taken into consideration in all the calculations.

  5. Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

    SciTech Connect (OSTI)

    Kesim, Yunus E. Battal, Enes; Okyay, Ali K.

    2014-07-15

    Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (415 ?m) infrared absorber.

  6. Influence of solvent on the morphology and photocatalytic properties of ZnS decorated CeO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Raubach, Cristiane W. Polastro, Lisnias; Ferrer, Mateus M.; Perrin, Andre; Perrin, Christiane; Albuquerque, Anderson R.; Buzolin, Prescila G. C.; Sambrano, Julio R.; Santana, Yuri B. V. de; Varela, Jos A.; Longo, Elson

    2014-06-07

    Herein, we report a theoretical and experimental study on the photocatalytic activity of CeO{sub 2} ZnS, and ZnS decorated CeO{sub 2} nanoparticles prepared by a microwave-assisted solvothermal method. Theoretical models were established to analyze electron transitions primarily at the interface between CeO{sub 2} and ZnS. As observed, the particle morphology strongly influenced the photocatalytic degradation of organic dye Rhodamine B. A model was proposed to rationalize the photocatalytic behavior of the prepared decorated systems taking into account different extrinsic and intrinsic defect distributions, including order-disorder effects at interfacial and intra-facial regions, and vacancy concentration.

  7. Atom-probe tomographic study of interfaces of Cu{sub 2}ZnSnS{sub 4} photovoltaic cells

    SciTech Connect (OSTI)

    Tajima, S. Asahi, R.; Itoh, T.; Hasegawa, M.; Ohishi, K.; Isheim, D.; Seidman, D. N.

    2014-09-01

    The heterophase interfaces between the CdS buffer layer and the Cu{sub 2}ZnSnS{sub 4} (CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573?K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

  8. Interaction between O{sub 2} and ZnO films probed by time-dependent second-harmonic generation

    SciTech Connect (OSTI)

    Andersen, S. V.; Vandalon, V.; Bosch, R. H. E. C.; Loo, B. W. H. van de; Kessels, W. M. M.; Pedersen, K.

    2014-02-03

    The interaction between O{sub 2} and ZnO thin films prepared by atomic layer deposition has been investigated by time-dependent second-harmonic generation, by probing the electric field induced by adsorbed oxygen molecules on the surface. The second-harmonic generated signal decays upon laser exposure due to two-photon assisted desorption of O{sub 2}. Blocking and unblocking the laser beam for different time intervals reveals the adsorption rate of O{sub 2} onto ZnO. The results demonstrate that electric field induced second-harmonic generation provides a versatile non-contact probe of the adsorption kinetics of molecules on ZnO thin films.

  9. Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

    DOE Patents [OSTI]

    Hoffbauer, Mark A.; Prettyman, Thomas H.

    2001-01-01

    Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

  10. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  11. One-photon band gap engineering of borate glass doped with ZnO for photonics applications

    SciTech Connect (OSTI)

    Abdel-Baki, Manal; Abdel-Wahab, Fathy A.; El-Diasty, Fouad

    2012-04-01

    Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

  12. Cation ordering and effect of biaxial strain in double perovskite CsRbCaZnCl6

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pilania, G.; Uberuaga, B. P.

    2015-03-19

    Here, we investigate the electronic structure, energetics of cation ordering, and effect of biaxial strain on double perovskite CsRbCaZnCl6 using first-principles calculations based on density functional theory. The two constituents (i.e., CsCaCl3 and RbZnCl3) forming the double perovskite exhibit a stark contrast. While CsCaCl3 is known to exist in a cubic perovskite structure and does not show any epitaxial strain induced phase transitions within an experimentally accessible range of compressive strains, RbZnCl3 is thermodynamically unstable in the perovskite phase and exhibits ultra-sensitive response at small epitaxial strains if constrained in the perovskite phase. We show that combining the two compositionsmore » in a double perovskite structure not only improves overall stability but also the strain-polarization coupling of the material. Our calculations predict a ground state with P4/nmm space group for the double perovskite, where A-site cations (i.e., Cs and Rb) are layer-ordered and B-site cations (i.e., Ca and Zn) prefer a rocksalt type ordering. The electronic structure and bandgap in this system are shown to be quite sensitive to the B-site cation ordering and is minimally affected by the ordering of A-site cations. We find that at experimentally accessible compressive strains CsRbCaZnCl6 can be phase transformed from its paraelectric ground state to an antiferroelectric state, where Zn atoms contribute predominantly to the polarization. Furthermore, both energy difference and activation barrier for a transformation between this antiferroelectric state and the corresponding ferroelectric configuration are predicted to be small. As a result, the computational approach presented here opens a new pathway towards a rational design of novel double perovskites with improved strain response and functionalities.« less

  13. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Hming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (424?nm) were sputter-deposited on 100?nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525?C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100?nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1??m). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  14. Carbonaceous spheresan unusual template for solid metal oxide mesoscale spheres: Application to ZnO spheres

    SciTech Connect (OSTI)

    Patrinoiu, Greta; Caldern-Moreno, Jose Maria; Culita, Daniela C. [Illie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania); Birjega, Ruxandra [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box Mg27, Magurele, Bucharest (Romania); Ene, Ramona [Ilie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania); Carp, Oana, E-mail: ocarp@icf.ro [Ilie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania)

    2013-06-15

    A green template route for the synthesis of mesoscale solid ZnO spheres was ascertained. The protocol involves a double coating of the carbonaceous spheres with successive layers of zinc-containing species by alternating a non-ultrasound and ultrasound-assisted deposition, followed by calcination treatments. The composites were characterized by FTIR spectroscopy, thermal analysis, scanning electron microscopy while the obtained ZnO spheres by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopy, N{sub 2} adsorptiondesorption isotherms and photoluminescence investigations. A growth mechanism of the solid spheres is advanced based on these results. While the spheres' diameters and the mean size values of ZnO are independent on deposition order, the surface area and the external porosity are fairly dependent. The photoluminescence measurements showed interesting emission features, with emission bands in the violet to orange region. The spheres present high photocatalytical activity towards the degradation of phenol under UV irradiation, the main reaction being its mineralization. - Graphical abstract: A novel and eco-friendly methodology for the synthesis of mesoscale solid ZnO spheres was developed. The protocol involves a double coating of the starch-derived carbonaceous spheres with successive layers of zinc-containing species by alternating a non-ultrasound and ultrasound-assisted deposition, followed by calcination treatments. - Highlights: ZnO solid spheres are obtained via a template route using carbonaceous spheres. Two-step coatings of interchangeable order are used as deposition procedure. The coating procedure influences the porosity and surface area. ZnO spheres exhibited interesting visible photoluminescence properties. Solid spheres showed photocatalytical activity in degradation of phenol.

  15. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Basset, D.M. Abdel

    2011-11-15

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  16. The effect of Au and Ni doping on the heavy fermion state of the Kondo lattice antiferromagnet CePtZn

    SciTech Connect (OSTI)

    Dhar, S. K.; Aoki, Y.; Suemitsu, B.; Miyazaki, R.; Provino, A.; Manfrinetti, P.

    2014-05-07

    We have probed the effect of doping CePtZn with Au and Ni and also investigated in detail the magnetic behavior of the iso-structural CeAuZn. A magnetic ground state is observed in both CePt{sub 0.9}Au{sub 0.1}Zn and CePt{sub 0.9}Ni{sub 0.1}Zn with T{sub N}?=?2.1 and 1.1?K and the coefficient of the linear term of electronic heat capacity ??=?0.34 and 0.9?J/mol K{sup 2}, respectively. The corresponding values for CePtZn are 1.7?K and 0.6?J/mol K{sup 2}. The altered values of T{sub N} and ? show that the electronic correlations in CePtZn are affected by doping with Au and Ni. CeAuZn orders magnetically near 1.7?K and its electrical resistivity shows a normal metallic behavior. Together with a ? of 0.022?J/mol K{sup 2} the data indicate a weak 4f-conduction electron hybridization in CeAuZn characteristic of normal trivalent cerium based systems.

  17. CdS and CdS/CdSe sensitized ZnO nanorod array solar cells prepared by a solution ions exchange process

    SciTech Connect (OSTI)

    Chen, Ling; Gong, Haibo; Zheng, Xiaopeng; Zhu, Min; Zhang, Jun; Yang, Shikuan; Cao, Bingqiang

    2013-10-15

    Graphical abstract: - Highlights: CdS and CdS/CdSe quantum dots are assembled on ZnO nanorods by ion exchange process. The CdS/CdSe sensitization of ZnO effectively extends the absorption spectrum. The performance of ZnO/CdS/CdSe cell is improved by extending absorption spectrum. - Abstract: In this paper, cadmium sulfide (CdS) and cadmium sulfide/cadmium selenide (CdS/CdSe) quantum dots (QDs) are assembled onto ZnO nanorod arrays by a solution ion exchange process for QD-sensitized solar cell application. The morphology, composition and absorption properties of different photoanodes were characterized with scanning electron microscope, transmission electron microscope, energy-dispersive X-ray spectrum and Raman spectrum in detail. It is shown that conformal and uniform CdS and CdS/CdSe shells can grow on ZnO nanorod cores. Quantum dot sensitized solar cells based on ZnO/CdS and ZnO/CdS/CdSe nanocable arrays were assembled with gold counter electrode and polysulfide electrolyte solution. The CdS/CdSe sensitization of ZnO can effectively extend the absorption spectrum up to 650 nm, which has a remarkable impact on the performance of a photovoltaic device by extending the absorption spectrum. Preliminary results show one fourth improvement in solar cell efficiency.

  18. Morphology and structure features of ZnAl{sub 2}O{sub 4} spinel nanoparticles prepared by matrix-isolation-assisted calcination

    SciTech Connect (OSTI)

    Du, Xuelian; Li, Liqiang; Zhang, Wenxing; Chen, Wencong; Cui, Yuting

    2015-01-15

    Graphical abstract: The substrate ZnO as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. High purity, well-dispersed, and single-crystal ZnAl{sub 2}O{sub 4} nanoparticles with 3.72 eV band gap were obtained. - Abstract: Well-dispersed ZnAl{sub 2}O{sub 4} spinel nanoparticles with an average crystalline size of 25.7 nm were synthesized successfully and easily by polymer-network and matrix-isolation-assisted calcination. The product microstructure and features were investigated by X-ray diffractometry, thermogravimetric and differential thermal analysis, Fourier transform-infrared spectroscopy, N{sub 2} adsorptiondesorption isotherms, and energy dispersive X-ray spectra. The morphology and optical performance of the as-prepared ZnAl{sub 2}O{sub 4} nanoparticles were characterized by scanning electron microscope, transmission electron microscopy, and photoluminescence spectrometer. Experimental results indicate that excess ZnO acted as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. Then, high purity and well-dispersed ZnAl{sub 2}O{sub 4} nanoparticles with single-crystal structure were obtained.

  19. Enhancement of surface phonon modes in the Raman spectrum of ZnSe nanoparticles on adsorption of 4-mercaptopyridine

    SciTech Connect (OSTI)

    Islam, Syed K.; Lombardi, John R.

    2014-02-21

    By chemically etching a thin film of crystalline ZnSe with acid, we observe a strong Raman enhancement of the surface phonon modes of ZnSe on adsorption of a molecule (4-mercaptopyridine). The surface is composed of oblate hemi-ellipsoids, which has a large surface-to-bulk ratio. The assignment of the observed modes (at 248 and 492 cm{sup ?1}) to a fundamental and first overtone of the surface optical mode is consistent with observations from high-resolution electron energy loss spectroscopy as well as calculations.

  20. In-situ optical transmission electron microscope study of exciton phonon replicas in ZnO nanowires by cathodoluminescence

    SciTech Connect (OSTI)

    Yang, Shize; Tian, Xuezeng; Wang, Lifen; Wei, Jiake; Qi, Kuo; Li, Xiaomin; Xu, Zhi E-mail: xdbai@iphy.ac.cn Wang, Wenlong; Zhao, Jimin; Bai, Xuedong E-mail: xdbai@iphy.ac.cn; Wang, Enge E-mail: xdbai@iphy.ac.cn

    2014-08-18

    The cathodoluminescence spectrum of single zinc oxide (ZnO) nanowires is measured by in-situ optical Transmission Electron Microscope. The coupling between exciton and longitudinal optical phonon is studied. The band edge emission varies for different excitation spots. This effect is attributed to the exciton propagation along the c axis of the nanowire. Contrary to free exciton emission, the phonon replicas are well confined in ZnO nanowire. They travel along the c axis and emit at the end surface. Bending strain increases the relative intensity of second order phonon replicas when excitons travel along the c-axis.

  1. Energy levels and zero field splitting parameter for Fe{sup 2+} doped in ZnS

    SciTech Connect (OSTI)

    Ivaşcu, Simona

    2013-11-13

    The aim of present paper is to report the results on the modeling of the crystal field parameters of Fe{sup 2+} doped in host matrix ZnS, simulate the energy levels scheme and calculate the zero field splitting parameter D of such system. The crystal field parameters were modeled in the frame of the superposition model of crystal field and the simulation of the energy levels scheme and calculation of the zero field splitting parameters done by diagonalization the Hamiltonian of Fe{sup 2+}:ZnS system. The obtained results were disscused and compared with experimental data. Satisfactory agreement have been obtained.

  2. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  3. A single-molecule approach to ZnO defect studies: Single photons and single defects

    SciTech Connect (OSTI)

    Jungwirth, N. R.; Pai, Y. Y.; Chang, H. S.; MacQuarrie, E. R.; Nguyen, K. X.; Fuchs, G. D.

    2014-07-28

    Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here, we present confocal fluorescence measurements of individual defects in ZnO nanoparticles and sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range of ?560720?nm and typically exhibits two broad spectral peaks separated by ?150?meV. The excited state lifetimes range from 1 to 13?ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.

  4. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    SciTech Connect (OSTI)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L.

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  5. A Tb–Zn tetra(4-sulfonatophenyl)porphyrin hybrid: Preparation, structure, photophysical and electrochemical properties

    SciTech Connect (OSTI)

    Chen, Wen-Tong; Hu, Rong-Hua; Wang, Yin-Feng; Zhang, Xian; Liu, Juan

    2014-05-01

    A terbium-zinc porphyrin, i.e. [TbZn(TPPS)H{sub 3}O]{sub n} (1) (TPPS=tetra(4-sulfonatophenyl)porphyrin), has been obtained from a solvothermal reaction and structurally analyzed by single-crystal X-ray diffraction. Compound 1 is characteristic of a condensed three-dimensional (3-D) porous open framework with two types of infinite one-dimensional (1-D) chain-like structure. Compound 1 exhibits a void space of 215 Å{sup 3}, which is 9.2% of the unit-cell volume. TG/DTA measurement reveals that the framework of compound 1 is thermally stable up to 336 °C. In order to reveal its photophysical and electrochemical properties, we investigated compound 1 in detail with UV–vis spectra, fluorescence, quantum yield, luminescence lifetime, and CV/DPV. - Graphical abstract: A terbium–zinc porphyrin [TbZn(TPPS)H{sub 3}O]{sub n} has been obtained from a solvothermal reaction. It features a condensed 3-D porous open framework. It shows good thermal stability. - Highlights: • This paper reports a novel terbium–zinc porphyrin. • It features a novel condensed three-dimensional porous open framework. • The title compound is thermally stable up to 336 °C. • It is studied by UV–vis, fluorescence, quantum yield, lifetime, and CV/DPV.

  6. Conduction below 100 °C in nominal Li6ZnNb4O14

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Yunchao; Paranthaman, Mariappan Parans; Gill, Lance W.; Edward W. Hagaman; Wang, Yangyang; Sokolov, Alexei P.; Dai, Sheng; Ma, Cheng; Chi, Miaofang; Veith, Gabriel M.; et al

    2015-09-15

    The increasing demand for a safe rechargeable battery with a high energy density per cell is driving a search for a novel solid electrolyte with a high Li+ or Na+ conductivity that is chemically stable in a working Li-ion or Na-ion battery. Li6ZnNb4O14 has been reported to exhibit a σ Li > 10-2 S cm-1 at 250 °C, but to disproportionate into multiple phases on cooling from 850 °C to room temperature. An investigation of the room-temperature Li-ion conductivity in a porous pellet of a multiphase product of a nominal Li6ZnNb4O14 composition is shown to have bulk σ Li 3.3more » x 10-5 S cm-1 at room temperature that increases to 1.4 x 10-4 S cm-1 by 50 °C. 7Li MAS NMR spectra were fitted to two Lorentzian lines, one of which showed a dramatic increase with increasing temperature. As a result, a test for water stability indicates that Li+ may move to the particle and grain surfaces to react with adsorbed water as occurs in the garnet Li+ conductors.« less

  7. Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

    SciTech Connect (OSTI)

    Miyata, Toshihiro; Honma, Yasunori; Minami, Tadatsugu

    2007-07-15

    Highly transparent and conductive B-doped ZnO (BZO) thin films have been prepared by a newly developed vacuum arc plasma evaporation method that provided high-rate film depositions using sintered BZO pellets and fragments. The obtained electrical and optical properties of the deposited BZO thin films were considerably affected by the deposition conditions as well as the preparation method of the BZO pellets and fragments used. The lowest thin film resistivity was obtained with a B doping content [B/(B+Zn) atomic ratio] of approximately 1 at. %. A resistivity as low as 5x10{sup -4} {omega} cm and an average transmittance above about 80% in the wavelength range of 400-1300 nm were obtained in BZO films prepared with a thickness above approximately 400 nm at a substrate temperature of 200 deg. C. In addition, a low resistivity of 7.97x10{sup -4} {omega} cm and average transmittances above about 80% in the visible wavelength range were obtained in a BZO film prepared at a substrate temperature of 100 deg. C and an O{sub 2} gas flow rate of 10 SCCM (SCCM denotes cubic centimeter per minute at STP). The deposition rate of BZO films was typically 170 nm/min with a cathode plasma power of 4.5 kW.

  8. Variation of the matter densities of nuclei from /sup 40/Ca to /sup 68/Zn

    SciTech Connect (OSTI)

    Papanicolas, C N; Sumner, W Q; Blair, J S; Bernstein, A M

    1981-01-01

    Analysis is made of elastic scattering of 42 MeV ..cap alpha..-particles from 19 nuclei from /sup 40/Ca to /sup 68/Zn in terms of a folding model, allowing determination of matter densities in the nuclear surface region relative to that of /sup 40/Ca. Specifically, values are deduced for the radii at which the matter density equals 0.016 nucleon/fm/sup 3/ as well as matter RMS radii. The relative sizes vary more slowly than A/sup 1/3/ between /sup 40/Ca and /sup 54/Fe and more rapidly than A/sup 1/3/ between /sup 54/Fe and /sup 68/Zn. The overall trend gives an increase with A/sup 1/3/ but with a bowing effect. The near equality of proton and matter RMS radii indicates that the neutron-proton radii are approximately equal to within the errors of the present analysis. The results are in reasonable agreement with those obtained with other hadronic probes and with calculated Hartree-Fock Bogolyubov densities.

  9. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect (OSTI)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  10. Pyroelectric-field driven defects diffusion along c-axis in ZnO nanobelts under high-energy electron beam irradiation

    SciTech Connect (OSTI)

    Ding, Yong Liu, Ying; Niu, Simiao; Wu, Wenzhuo; Wang, Zhong Lin

    2014-10-21

    When ZnO nanobelts are exposed to a high-dose electron probe of several nanometers to hundred nanometers in diameter inside a transmission electron microscope, due to the radiolysis effect, part of oxygen atoms will be ejected into the vacuum and leaving a Zn-ion rich surface with a pit appearance at both the electron-entrance and electron-exit surfaces. At the same time, a temperature distribution is created around the electron probe due to local beam heating effect, which generates a unidirectional pyroelectric field. This pyroelectric field is strong enough to drive Zn ions moving along its positive c-axis direction as interstitial ions. In the first case, for the ZnO nanobelts with c-axis lie in their large surfaces, defects due to the aggregation of Zn interstitial ions will be formed at some distances of 3050 nm approximately along the c-axis direction from the electron beam illuminated area. Alternatively, for the ZnO nanobelts with (0001) planes as their large surfaces, the incident electron beam is along its c-axis and the generated pyroelectric field will drive the interstitial Zn-ions to aggregate at the Zn terminated (0001) surface where the local electrical potential is the lowest. Such electron beam induced damage in ZnO nanostructures is suggested as a result of Zn ion diffusion driven by the temperature gradient induced pyroelectric field along c-axis. Our study shows a radiation damage caused by electron beam in transmission electron microscopy, especially when the electron energy is high.

  11. Probing the effect of electron acceptor structure and morphology on charge separation in ZnO/P3HT hybrid photovoltaics using steady-state transient photoinduced absorption.

    SciTech Connect (OSTI)

    Davis, Robert Jackson; Lloyd, Matthew T.; Ferreira, Summer Rhodes; Lee, Yun-Ju; Hsu, Julia W. P.

    2010-04-01

    Hybrid cells based on ZnO/P3HT heterojunctions have the advantage of better device stability, but suffer poor photovoltaic performance compared to all-organic cells which use PCBM as the electron acceptor. The photovoltaic effect in these hybrid systems is accomplished via photoinduced charge separation at the interface between the absorbing polymer (P3HT) and the electron acceptor (ZnO). Efforts to improve device performance in these hybrid systems have centered on reducing the required diffusion length for P3HT excitons by creating bulk heterojunctions from either ZnO nanoparticles and P3HT or using ZnO precursors which convert in situ to form ZnO networks inside a polymer matrix. In this study, we use transient photoinduced absorption to access the lifetimes of P3HT polarons and excitons in bulk heterojunctions constructed using P3HT and ZnO nanoparticles or ZnO precursors and compare to those in planar ZnO/P3HT devices. Steady-state photoinduced absorption spectra of ZnO/P3HT show characteristic of sub-bandgap transitions associated with the formation of long-lived (msec lifetimes) radical cations (polarons) in P3HT. Similar short-lived polarons (psec lifetimes) are observed by picosecond transient photoinduced absorption in addition to infrared absorption due to excitons. Here we examine the lifetimes of both the excitons and polarons in ZnO:P3HT bulk heterojunctions using both picosecond and millisecond techniques in an effort to understand the effect of the structure and morphology of the electron acceptor on charge separation. We will also compare the relative photoexitation lifetimes, hence charge separation efficiency, for the planar and bulk heterojunction hybrid system to an all-organic P3HT:PCBM system.

  12. Synthesis, crystal structures, and physical properties of the new Zintl phases A{sub 21}Zn{sub 4}Pn{sub 18} (A=Ca, Eu; Pn=As, Sb)—Versatile arrangements of [ZnPn{sub 4}] tetrahedra

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Wang, Yi; Bobev, Svilen

    2015-07-15

    Four new Zintl phases, Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18} and Eu{sub 21}Zn{sub 4}Sb{sub 18} have been synthesized by metal flux reactions. Their structures have been established from single-crystal X-ray diffraction. Despite the similar chemical makeup and the identical formulae, the structures of the four compounds are not the same—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18} and Eu{sub 21}Zn{sub 4}As{sub 18} crystallize in the monoclinic space group C2/m (No. 12, Z=4) with the β-Ca{sub 21}Mn{sub 4}Sb{sub 18} structure type, while Eu{sub 21}Zn{sub 4}Sb{sub 18} adopts the Ba{sub 21}Cd{sub 4}Sb{sub 18} structure type with the orthorhombic space group Cmce (No. 64, Z=8). Both structures are based on ZnAs{sub 4} or ZnSb{sub 4} tetrahedra, linked in slightly different ways, and Ca{sup 2+} and Eu{sup 2+} cations that fill the space between them. The structural relationships between the title compounds and other known ternary phases with intricate structures are discussed. Electrical resistivity measurement on single-crystalline Eu{sub 21}Zn{sub 4}Sb{sub 18} suggests an intrinsic semiconductor behavior with a band gap of ca. 0.2 eV. The temperature dependent DC magnetization measurement on the same material indicates Curie–Weiss paramagnetism in the high-temperature regime, and a spontaneous antiferromagnetic ordering below 8 K. The calculated effective moments of Eu confirm the divalent Eu{sup 2+} ground state, as expected from the Zintl–Klemm concept. - Graphical abstract: The four new Zintl phases—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18}—crystallize in two structure types, showing the versatility in the arrangements of ZnAs{sub 4} and ZnSb{sub 4} tetrahedra. - Highlights: • Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18} are new compounds in the respective ternary phase diagrams. • They form with structure types, showing the versatility in the arrangements of ZnAs{sub 4} and ZnSb{sub 4} tetrahedra. • For both structures, the valence electron count follows the Zintl–Klemm rules.

  13. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

    SciTech Connect (OSTI)

    Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

    2015-01-15

    Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230?S/cm, which is ?6 more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3?mm radius cylinder. As an example application, the authors fabricate an all-fiber pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50?g/cm{sup 2}), yielding a ?10{sup 6} current change under 200?g/cm{sup 2}. This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics.

  14. Passivation of Zn{sub 3}P{sub 2} substrates by aqueous chemical etching and air oxidation

    SciTech Connect (OSTI)

    Kimball, Gregory M.; Bosco, Jeffrey P.; Mueller, Astrid M.; Tajdar, Syed F.; Brunschwig, Bruce S.; Atwater, Harry A.; Lewis, Nathan S.

    2012-11-15

    Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn{sub 3}P{sub 2} surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn{sub 3}P{sub 2} substrates. Zn{sub 3}P{sub 2} substrates that were etched with Br{sub 2} in methanol exhibited surface recombination velocity values of 2.8 Multiplication-Sign 10{sup 4} cm s{sup -1}, whereas substrates that were further treated by aqueous HF-H{sub 2}O{sub 2} exhibited surface recombination velocity values of 1.0 Multiplication-Sign 10{sup 4} cm s{sup -1}. Zn{sub 3}P{sub 2} substrates that were etched with Br{sub 2} in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 Multiplication-Sign 10{sup 3} cm s{sup -1}, as well as improved ideality in metal/insulator/semiconductor devices.

  15. Mechanochemical synthesis of tungsten carbide nano particles by using WO{sub 3}/Zn/C powder mixture

    SciTech Connect (OSTI)

    Hoseinpur, Arman; Vahdati Khaki, Jalil; Marashi, Maryam Sadat

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Nano particles of WC are synthesized by mechanochemical process. ? Zn was used to reduce WO{sub 3}. ? By removing ZnO from the milling products with an acid leaching, WC will be the final products. ? XRD results showed that the reduction reactions were completed after 36 h. ? TEM and SEM images showed that the morphology of produced powder is nearly spherical like. -- Abstract: In this research we introduce a new, facile, and economical system for fabrication of tungsten carbide (WC) nano particle powder. In this system WO{sub 3}, Zn, and C have been ball-milled for several hours, which led to the synthesis of tungsten carbide nano particles. The synthesized WC can successfully be separated from the ball-milled product by subjecting the product powder to diluted HCl for removing ZnO and obtaining WC. X-ray diffraction (XRD) analysis indicates that the reduction of WO{sub 3} will be completed gradually by increasing milling time up to 36 h. Scanning electron microscope (SEM), and transmission electron microscope (TEM) images show that after 36 h of milling the particle size of the fabricated powder is nano metric (about 20 nm). Results have shown that this system can surmount some main problems occurred in previous similar WC synthesizing systems. For example carbothermic reduction reactions, which lead to the synthesis of W{sub 2}C instead of WC, would not be activated because in this system reactions take place gradually.

  16. Preparation, characterization of the Ta-doped ZnO nanoparticles and their photocatalytic activity under visible-light illumination

    SciTech Connect (OSTI)

    Kong Jizhou; Li Aidong; Zhai Haifa; Gong Youpin; Li Hui; Wu Di

    2009-08-15

    This paper describes a novel catalyst of the Ta-doped ZnO nanocrystals prepared by a modified polymerizable complex method using the water-soluble tantalum precursor as the sources of Ta. The catalysts were characterized by means of various analytical techniques as a function of Ta content (x=0-4 mol%) systematically. A remarkable advantage of the results was confirmed that dopant Ta enhanced the visible-light absorption of ZnO and the low-solubility tantalum doping could restrain the growth of crystal and minish the particle size. The relationship between the physicochemical property and the photocatalytic performance was discussed, and it was found that the photocatalytic activity in the photochemical degradation of methylene blue under visible-light irradiation (lambda>=420 nm) was dependent on the contents of the dopant, which could affect the particle size, concentration of surface hydroxyl groups and active hydrogen-related defect sites, and the visible-light absorption. The highest photocatalytic activity was obtained for the 1.0 mol% Ta-doped ZnO sample. - Graphical abstract: The addition of the tantalum into ZnO prepared by a modified polymerizable complex method not only restrains the growth of crystal, minish the particle size, but also changes the nanocrystal morphology.

  17. Anti-Site Defects in p-Type Co2ZnO4: Better than Perfect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    conductivity-just the opposite of the predicted effect for Doping Type II Co 2 ZnO 4 . ... 0.0 0.67 0.5 1.0 1.5 Configura onal Entropyk B 1.0 2.0 INVERSE As deposited T * ...

  18. Photoluminescence Enhancement in CdSe/ZnSDNA linkedAu Nanoparticle Heterodimers Probed by Single Molecule Spectroscopy

    SciTech Connect (OSTI)

    Cotlet, M.; Maye, M.M.; Gang, O.

    2010-07-26

    Photoluminescence enhancement of up to 20 fold is demonstrated at the single molecule level for heterodimers composed of a core/shell CdSe/ZnS semiconductive quantum dot and a gold nanoparticle of 60 nm size separated by a 32 nm-long dsDNA linker when employing optical excitation at wavelengths near the surface plasmon resonance of the gold nanoparticle.

  19. Synthesis of Zn/Co/Fe-layered double hydroxide nanowires with controllable morphology in a water-in-oil microemulsion

    SciTech Connect (OSTI)

    Wu Hongyu; Jiao Qingze; Zhao Yun; Huang Silu; Li Xuefei; Liu Hongbo; Zhou Mingji

    2010-02-15

    The Zn/Co/Fe-layered double hydroxide nanowires were synthesized via a reverse microemulsion method by using cetyltrimethyl ammonium bromide (CTAB) /n-hexane/n-hexanol/water as Soft-Template. ZnSO{sub 4}, CoSO{sub 4}, Fe{sub 2}(SO{sub 4}){sub 3} and urea were used as raw materials. The influence of reaction temperature, time, urea concentration and Cn (molar ratio of cetyltrimethyl ammonium bromide to water) on the structure and morphology of Zn/Co/Fe-layered double hydroxides was investigated. The samples were characterized using Transmission Electron Microscopy (TEM), Inductively Coupled Plasma (ICP), X-ray Diffraction (XRD) and Infrared Absorption Spectrum (IR). The results indicate that higher temperature is beneficial to the formation of layered double hydroxides, but particles apart from nanowires could be produced if temperature is up to 120 deg. C. By varying the temperature, reaction time, urea concentration and Cn, we got the optimum conditions of synthesizing uniform Zn/Co/Fe-layered double hydroxide nanowires: 100 deg. C, more than 12 h, Cn: 30-33, urea concentration: 0.3 M.

  20. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    SciTech Connect (OSTI)

    Chebil, W.; Fouzri, A.; Fargi, A.; Azeza, B.; Zaaboub, Z.; and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  1. Preparation, characterization and photocatalytic activity of visible-light-driven plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites

    SciTech Connect (OSTI)

    Li, Xiaojuan Tang, Duanlian; Tang, Fan; Zhu, Yunyan; He, Changfa; Liu, Minghua Lin, Chunxiang; Liu, Yifan

    2014-08-15

    Highlights: A plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} photocatalyst has been successfully synthesized. Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites exhibit high visible light photocatalytic activity. Ag/AgBr/ZnFe{sub 2}O{sub 4} photocatalyst is stable and magnetically separable. - Abstract: A visible-light-driven plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposite has been successfully synthesized via a depositionprecipitation and photoreduction through a novel one-pot process. X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and UVvis diffuse reflectance spectroscopy were employed to investigate the crystal structure, chemical composition, morphology, and optical properties of the as-prepared nanocomposites. The photocatalytic activities of the nanocomposites were evaluated by photodegradation of Rhodamine B (RhB) and phenol under visible light. The results demonstrated that the obtained Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites exhibited higher photocatalytic activity as compared to pure ZnFe{sub 2}O{sub 4}. In addition, the sample photoreduced for 20 min and calcined at 500 C achieved the highest photocatalytic activity. Furthermore, the Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposite has high stability under visible light irradiation and could be conveniently separated by using an external magnetic field.

  2. Co-assembly of Zn(SPh){sub 2} and organic linkers into helical and zig-zag polymer chains

    SciTech Connect (OSTI)

    Liu Yi; Yu Lingmin; Loo, Say Chye Joachim; Blair, Richard G.; Zhang Qichun

    2012-07-15

    Two novel one-dimensional coordination polymers, single helicate [Zn(SPh){sub 2}(TPyTA)(EG)]{sub n} (EG=ethylene glycol) (1) and zig-zag structure [Zn(SPh){sub 2}(BPyVB)]{sub n} (2), were synthesized under solvothermal conditions at 150 Degree-Sign C or room temperature by the co-assembly of Zn(SPh){sub 2} and organic linkers such as 2,4,6-tri(4-pyridyl)-1,3,5-triazine (TPyTA) and 1,3-bis(trans-4-pyridylvinyl)benzene (BPyVB). X-ray crystallography study reveals that both polymers 1 and 2 crystallize in space group P2{sub 1}/c of the monoclinic system. The solid-state UV-vis absorption spectra show that 1 and 2 have maxium absorption onsets at 400 nm and 420 nm, respectively. TGA analysis indicates that 1 and 2 are stable up to 110 Degree-Sign C and 210 Degree-Sign C. - Graphical abstract: Two novel one-dimensional coordination polymers, single helicate [Zn(SPh){sub 2}(TPyTA)(EG)]{sub n} (1) and zig-zag structure [Zn(SPh){sub 2}(BPyVB)]{sub n} (2), were synthesized. Solid-state UV-vis absorptions show that 1 and 2 have maxium absorption onsets at 400 nm and 420 nm, respectively. TGA analysis indicates that 1 and 2 are stable up to 110 Degree-Sign C and 210 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Two novel one-dimensional coordination polymers have been synthesized. Black-Right-Pointing-Pointer TPyTA results in helical structures in 1 while BPyVB leads to zig-zag chains in 2. Black-Right-Pointing-Pointer Solid-state UV-vis absorption spectra and TGA analysis of the title polymers were studied.

  3. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  4. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    SciTech Connect (OSTI)

    Hanyu, Yuichiro Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama ; Kumomi, Hideya; Hosono, Hideo; Frontier Research Center, Tokyo Institute of Technology, Yokohama; Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama

    2013-11-11

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300?C exhibit good operation characteristics; while those annealed at ?400?C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300430?C. A plausible structural model is suggested.

  5. Experimental and Theoretical Pursuit of the Ultimate Conductivity in ZnO

    SciTech Connect (OSTI)

    Look, David C

    2014-12-22

    In this program, we and our colleagues at the Pacific Northwest National Laboratory (PNNL) had proposed nine areas of research. In most of these we made significant progress, as outlined below. Many of the results were published as listed at the end of the report. 1. Optimized growth of GZO in H2 2. Optimized growth of GZO in forming gas 3. Optimized growth of GZO in Ar with a subsequent anneal in H2 or forming gas 4. Optimized growth of GZO in Ar with a subsequent anneal in Zn vapor 5. Modeling of thickness effects and experimental verification 6. Measurements of thickness and optical mobility by ellipsometry 7. Low-temperature photoluminescence measurements and analysis 8. Transmission and reflectance measurements 9. Measurements of stability 10. Discussion: electrical characterization

  6. Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.

    2009-08-15

    The effect of the photonic band gap (stopband) of the photonic crystal, the synthesized SiO{sub 2} opal with embedded zinc oxide, on its luminescence in the violet spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra of the infiltrated opal depends on the diameter of the constituent nanoglobules, the volume fraction of zinc oxide, and on the signal's acceptance angle. It is found that, for the ZnO-opal nanocomposites, the emission intensity is decreased and the luminescence decay time is increased in the spatial directions, in which the photonic band gap coincides in spectral position with the luminescence peak of zinc oxide. The change in the decay time can be attributed to the change in the local density of photonic states in the photonic band gap.

  7. Growth, disorder, and physical properties of ZnSnN{sub 2}

    SciTech Connect (OSTI)

    Feldberg, N.; Aldous, J. D.; Linhart, W. M.; Phillips, L. J.; Durose, K.; Veal, T. D.; Stampe, P. A.; Kennedy, R. J.; Scanlon, D. O.; Vardar, G.; Field, R. L. III; Jen, T. Y.; Goldman, R. S.; Durbin, S. M.; Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260

    2013-07-22

    We examine ZnSnN{sub 2}, a member of the class of materials contemporarily termed “earth-abundant element semiconductors,” with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum.

  8. A process for the chemical preparation of high-field ZnO varistors

    DOE Patents [OSTI]

    Brooks, R.A.; Dosch, R.G.; Tuttle, B.A.

    1986-02-19

    Chemical preparation techniques involving co-precipitation of metals are used to provide microstructural characteristics necessary in order to produce ZnO varistors and their precursors for high field applications. The varistors produced have homogeneous and/or uniform dopant distributions and a submicron average grain size with a narrow size distribution. Precursor powders are prepared via chemical precipitation techniques and varistors made by sintering uniaxially and/or isostatically pressed pellets. Using these methods, varistors were made which were suitable for high-power applications, having values of breakdown field, E/sub B/, in the 10 to 100 kV/cm range, ..cap alpha.. > 30 and densities in the range of 65 to 99% of theoretical, depending on both composition and sintering temperature.

  9. Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO{sub 4}

    SciTech Connect (OSTI)

    Lynch, David M.; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O.; Levin, Barnaby D. A.; Muller, David A.; Greene, Raymond G.

    2014-12-29

    Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO{sub 4} (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190?C, nanocrystalline films with an X-ray peak at 2??=?30 (009 planes) developed with increasing c-axis normal texturing up to 310?C. Under optimal conditions (310?C, 10% O{sub 2}), films exhibited a c-axis texture full-width half-maximum of 20. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of 9 over a 15 15?nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed.

  10. Process for the chemical preparation of high-field ZnO varistors

    DOE Patents [OSTI]

    Brooks, Robert A.; Dosch, Robert G.; Tuttle, Bruce A.

    1987-01-01

    Chemical preparation techniques involving co-precipitation of metals are used to provide micro-structural characteristics necessary in order to produce ZnO varistors and their precursors for high field applications. The varistors produced have homogeneous and/or uniform dopant distributions and a submicron average grain size with a narrow size distribution. Precursor powders are prepared via chemical precipitation techniques and varistors made by sintering uniaxially and/or isostatically pressed pellets. Using these methods, varistors were made which were suitable for high-power applications, having values of breakdown field, E.sub.B, in the 10-100 kV/cm range, .alpha.>30 and densities in the range of 65-99% of theoretical, depending on both composition and sintering temperature.

  11. Co-Evaporated Cu2ZnSnSe4 Films and Devices

    SciTech Connect (OSTI)

    Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

    2012-06-01

    The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

  12. Factors affecting initial permeability of Co-substituted Ni-Zn-Cu ferrites

    SciTech Connect (OSTI)

    Byun, T.Y.; Byeon, S.C.; Hong, K.S.; Kim, C.K.

    1999-09-01

    Iron deficient compositions of (Ni{sub 0.2}Cu{sub 0.2}Zn{sub 0.6}){sub 1.02{minus}x}Co{sub x}Fe{sub 1.98}O{sub 4} (0 {le} x {le} 0.05) were prepared to investigate their initial permeability dependence on cobalt contents. Extrinsic factors such as grain size and sintered density change little in samples sintered at 900 C, so their effects on permeability can be neglected. Intrinsic factors such as saturation magnetization, magnetocrystalline anisotropy (K{sub 1}) and magnetoelastic anisotropy (K{sub {sigma}}) can not account for the variation of initial permeability with Co content. Measurement of thermoelectric power shows that the concentration of cation vacancies increases with Co content. Therefore, the local induced anisotropy increases by the ordering of Co ions cia increased cation vacancy concentration. This increase in induced anisotropy results in the decrease of initial permeability.

  13. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  14. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    SciTech Connect (OSTI)

    Prestgard, M. C.; Siegel, G.; Tiwari, A.; Roundy, R.; Raikh, M.

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  15. Spectroscopic properties of (PVA+ZnO):Mn{sup 2+} polymer films

    SciTech Connect (OSTI)

    Rani, Ch.; Raju, D. Siva; Bindu, S. Hima; Krishna, J. Suresh; Raju, Ch. Linga

    2015-05-15

    Electron Paramagnetic Resonance (EPR), optical absorption and infrared spectral studies have been carried out on Mn{sup 2+} ions doped in poly(vinyl alcohol) complexed with zinc oxide polymer films prepared by solution cast technique. The EPR spectra of 1 mol% Mn{sup 2+} ions doped polymer complex (PVA+ZnO) at room temperature exhibit sextet hyperfine structure (hfs), centered at 2.01. The spin-Hamiltonian parameter values indicate that the ground state of Mn{sup 2+} ion in d{sup 5} and the site symmetry around Mn{sup 2+} ions in tetragonally distorted octa hedral site. The optical absorption spectra exhibits two bands centered at 275nm at 437nm. The FTIR spectrum exhibits bands characteristic of stretching and banding vibrations of O-H, C-H and C=C groups.

  16. Polariton lasing in a ZnO microwire above 450?K

    SciTech Connect (OSTI)

    Xu, Dan; Xie, Wei; Liu, Wenhui; Wang, Jian; Zhang, Long; Wang, Yinglei; Zhang, Saifeng; Sun, Liaoxin; Shen, Xuechu; Chen, Zhanghai

    2014-02-24

    Exciton-polariton lasing in a one-dimensional ZnO microcavity is demonstrated at high temperature of 455?K. The massive occupation of the polariton ground state above a distinct pump power threshold is clearly demonstrated by using the angular resolved spectroscopy under non-resonant excitation. The temperature dependence of the polariton lasing threshold is well interpreted by two competing mechanisms, i.e., the thermodynamic and kinetic mechanisms. Michelson interference measurements are performed to investigate the temporal and spatial coherence of polariton laser, with the coherence time and coherence length being ?{sub c}?0.97?ps and r{sub c}?0.72?m at 440?K and 400?K, respectively.

  17. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  18. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect (OSTI)

    Nomenyo, K.; Kostcheev, S.; Lrondel, G.; Gadallah, A.-S.; Rogers, D. J.

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  19. Synthesis, characterization and hydrophilic properties of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite film

    SciTech Connect (OSTI)

    Xu, Song; Huang, Hongwei; Wang, Conghe; Huang, Zhaohui; Wang, Chengbiao

    2015-05-15

    Highlights: • ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films have been successfully prepared via a sol–gel method. • It was deposited on glass slides through dip coating process. • 7% ZnFe{sub 2}O{sub 4}–TiO{sub 2} film exhibits a superhydrophilic property with a contact angle 0°. • The self-cleaning glasses also display antifogging property. - Abstract: ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films have been successfully prepared via a sol–gel method and deposited on glass slides through dip coating process. The hydrophilicity of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films was investigated by the contact angles measurements under different conditions, including heat treatment temperature, molar ratios of ZnFe{sub 2}O{sub 4} to TiO{sub 2} and coating layers. The results revealed that the 7 mol% ZnFe{sub 2}O{sub 4}-TiO{sub 2} composite film exhibits an excellent superhydrophilic performance with a contact angle 0°. Compared with normal glass, the self-cleaning glasses also display antifogging property. The transmittance of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films was characterized by UV–vis spectra in details. Coating layers and different molar percents of ZnFe{sub 2}O{sub 4} all have impact on the light transmittance. Moreover, the structure and morphology of the ZnFe{sub 2}O{sub 4}–TiO{sub 2} sample were investigated by means of X-ray diffraction (XRD), energy dispersive X-ray spectrometry (EDS) and scanning electron microscopy (SEM)

  20. The use of novel biodegradable, optically active and nanostructured poly(amide-ester-imide) as a polymer matrix for preparation of modified ZnO based bionanocomposites

    SciTech Connect (OSTI)

    Abdolmaleki, Amir; Nanotechnology and Advanced Materials Institute, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran ; Mallakpour, Shadpour; Nanotechnology and Advanced Materials Institute, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran ; Borandeh, Sedigheh

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer A novel biodegradable and nanostructured PAEI based on two amino acids, was synthesized. Black-Right-Pointing-Pointer ZnO nanoparticles were modified via two different silane coupling agents. Black-Right-Pointing-Pointer PAEI/modified ZnO BNCs were synthesized through ultrasound irradiation. Black-Right-Pointing-Pointer ZnO particles were dispersed homogeneously in PAEI matrix on nanoscale. Black-Right-Pointing-Pointer The effect of ZnO nanoparticles on the properties of synthesized polymer was examined. -- Abstract: A novel biodegradable and nanostructured poly(amide-ester-imide) (PAEI) based on two different amino acids, was synthesized via direct polycondensation of biodegradable N,N Prime -bis[2-(methyl-3-(4-hydroxyphenyl)propanoate)]isophthaldiamide and N,N Prime -(pyromellitoyl)-bis-L-phenylalanine diacid. The resulting polymer was characterized by FT-IR, {sup 1}H NMR, specific rotation, elemental analysis, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analysis. The synthesized polymer showed good thermal stability with nano and sphere structure. Then PAEI/ZnO bionanocomposites (BNCs) were fabricated via interaction of pure PAEI and ZnO nanoparticles. The surface of ZnO was modified with two different silane coupling agents. PAEI/ZnO BNCs were studied and characterized by FT-IR, XRD, UV/vis, FE-SEM and TEM. The TEM and FE-SEM results indicated that the nanoparticles were dispersed homogeneously in PAEI matrix on nanoscale. Furthermore the effect of ZnO nanoparticle on the thermal stability of the polymer was investigated with TGA and DSC technique.

  1. Surface strain engineering through Tb doping to study the pressure dependence of exciton-phonon coupling in ZnO nanoparticles

    SciTech Connect (OSTI)

    Sharma, A.; Dhar, S. Singh, B. P.; Nayak, C.; Bhattacharyya, D.; Jha, S. N.

    2013-12-07

    A compressive hydrostatic strain has been found to develop in the ZnO lattice as a result of accumulation of Tb ions on the surface of the nanoparticles for Tb mole-fraction less than 0.04. This hydrostatic strain can be controlled up to ?14?GPa by varying the Tb mole-fraction. Here, we have utilized this novel technique of surface strain engineering through Tb doping for introducing hydrostatic compressive strain in the lattice to study the pressure dependent electronic and vibrational properties of ZnO nanoparticles. Our study reveals that when subjected to pressure, nanoparticles of ZnO behave quite differently than bulk in many aspects. Unlike bulk ZnO, which is reported to go through a wurtzite to rock-salt structural phase transition at ?8?GPa, ZnO nanoparticles do not show such transition and remain in wurtzite phase even at 14?GPa of pressure. Furthermore, the Grneisen parameters for the optical phonon modes are found to be order of magnitude smaller in ZnO nanoparticles as compared to bulk. Our study also suggests an increase of the dielectric constant with pressure, which is opposite to what has been reported for bulk ZnO. Interestingly, it has also been found that the exciton-phonon interaction depends strongly upon pressure in this system. The exciton-phonon coupling has been found to decrease as pressure increases. A variational technique has been adopted to theoretically calculate the exciton-LO phonon coupling coefficient in ZnO nanoparticles as a function of pressure, which shows a good agreement with the experimental results. These findings imply that surface engineering of ZnO nanoparticles with Tb could indeed be an efficient tool to enhance and control the optical performance of this material.

  2. Methanol synthesis on ZnO(0001{sup }). IV. Reaction mechanisms and electronic structure

    SciTech Connect (OSTI)

    Frenzel, Johannes Marx, Dominik

    2014-09-28

    Methanol synthesis from CO and H{sub 2} over ZnO, which requires high temperatures and high pressures giving rise to a complex interplay of physical and chemical processes over this heterogeneous catalyst surface, is investigated using ab initio simulations. The redox properties of the surrounding gas phase are known to directly impact on the catalyst properties and thus, set the overall catalytic reactivity of this easily reducible oxide material. In Paper III of our series [J. Kiss, J. Frenzel, N. N. Nair, B. Meyer, and D. Marx, J. Chem. Phys. 134, 064710 (2011)] we have qualitatively shown that for the partially hydroxylated and defective ZnO(0001{sup }) surface there exists an intricate network of surface chemical reactions. In the present study, we employ advanced molecular dynamics techniques to resolve in detail this reaction network in terms of elementary steps on the defective surface, which is in stepwise equilibrium with the gas phase. The two individual reduction steps were investigated by ab initio metadynamics sampling of free energy landscapes in three-dimensional reaction subspaces. By also sampling adsorption and desorption processes and thus molecular species that are in the gas phase but close to the surface, our approach successfully generated several alternative pathways of methanol synthesis. The obtained results suggest an Eley-Rideal mechanism for both reduction steps, thus involving near-surface molecules from the gas phase, to give methanol preferentially over a strongly reduced catalyst surface, while important side reactions are of Langmuir-Hinshelwood type. Catalyst re-reduction by H{sub 2} stemming from the gas phase is a crucial process after each reduction step in order to maintain the catalyst's activity toward methanol formation and to close the catalytic cycle in some reaction channels. Furthermore, the role of oxygen vacancies, side reactions, and spectator species is investigated and mechanistic details are discussed based on extensive electronic structure analysis.

  3. Taheri-Saramad x-ray detector (TSXD): A novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane

    SciTech Connect (OSTI)

    Taheri, A. Saramad, S.; Ghalenoei, S.; Setayeshi, S.

    2014-01-15

    A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

  4. Crystal structure and magnetic properties and Zn substitution effects on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6}

    SciTech Connect (OSTI)

    Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Guo, Yanfeng, E-mail: Yangfeng.Guo@physics.ox.ac.uk [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Sun, Ying [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Matsushita, Yoshitaka [Materials Analysis Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan)

    2013-08-15

    The effects of substituting Co on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6} with Zn were investigated by synchrotron X-ray diffraction, magnetic susceptibility, isothermal magnetization, and specific heat measurements. To the best of our knowledge, this is the first report to describe the successful substitution of Co in Sr{sub 3}Co{sub 2}O{sub 6} with Zn. The substitution was carried out by a method involving high pressures and temperatures to obtain Sr{sub 3}CoZnO{sub 6}, which crystalized into a K{sub 4}CdCl{sub 6}-derived rhombohedral structure with a space group of R-3c, similar to the host compound. With the Zn substitution, the Ising-type magnetic anisotropy of the host compound remarkably reduced; the newly formed Sr{sub 3}CoZnO{sub 6} became magnetically isotropic with Heisenberg-type characteristics. This could probably be ascribed to the establishment of a different interaction pathway, Co{sup 4+}(S=1/2)OZn{sup 2+}(S=0)OCo{sup 4+}(S=1/2). Details of the magnetic properties of Zn substituted Sr{sub 3}Co{sub 2}O{sub 6} were reported. - Graphical abstract: Crystal structure of the spin-chain compound Sr{sub 3}CoZnO{sub 6} synthesized at 6 GPa. Zn atoms preferably occupy the trigonal prism sites rather than the octahedral sites. As a result, the compound is much magnetically isotropic. Highlights: Effects of substituting Co with Zn on spin-chain magnetism of Sr{sub 3}Co{sub 2}O{sub 6} were studied. High-pressure synthesis resulted in a solid solution of Sr{sub 3}CoZnO{sub 6}. Sr{sub 3}CoZnO{sub 6} showed more isotropic magnetism than the host Sr{sub 3}Co{sub 2}O{sub 6}.

  5. TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

    2009-01-01

    This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

  6. Arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocables with tunable shell composition for efficient photovoltaics

    SciTech Connect (OSTI)

    Akram, Muhammad Aftab; Javed, Sofia; Xu, Jun; Mujahid, Mohammad; Lee, Chun-Sing

    2015-05-28

    Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} core/shell nanocables with tunable shell compositions over the full range of 0???x???1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In{sub x}Ga{sub 1?x}, ZnO/CuSe/(In{sub x}Ga{sub 1?x}){sub 2}Se{sub 3}, and ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2}, are well designed and successfully achieved. Composition-dependent influences of the CuIn{sub x}Ga{sub 1?x}Se{sub 2} shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J{sub SC}) but a decrease in open-circuit voltage (V{sub OC}) for the ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocable solar cells. An array of ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} nanocables with a length of ?1??m and a shell thickness of ?10?nm exhibits a bandgap of 1.20?eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5?G illumination at an intensity of 100 mW/cm{sup 2}. It dramatically surpasses that (0.22%) of the ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer.

  7. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

    SciTech Connect (OSTI)

    Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L.; Shuvayev, Vladimir; Deligiannakis, Vasilios; Tamargo, Maria C.; Ludwig, Jonathan; Smirnov, Dmitry; Wang, Alice

    2014-10-28

    For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

  8. Structure and magnetic properties of three-dimensional (La,Sr)MnO{sub 3} nanofilms on ZnO nanorod arrays

    SciTech Connect (OSTI)

    Gao Haiyong; Gao Puxian; Shimpi, Paresh; Guo Yanbing; Cai Wenjie; Lin Huijan; Staruch, M.; Jain, Menka

    2011-03-21

    Three-dimensional (3D) cubic perovskite (La,Sr)MnO{sub 3} (LSMO) nanofilms have been deposited on ZnO nanorod arrays with controlled dimensionality and crystallinity by radio frequency (rf) magnetron sputtering and post thermal annealing. Compared to the two-dimensional (2D) LSMO nanofilm on flat Si, the structure and magnetic properties of 3D LSMO nanofilms on ZnO nanorod arrays have a strong anisotropic morphology and thickness dependence. Ferromagnetic property has been observed in both 2D and 3D LSMO nanofilms while a ferromagnetic-superparamagnetic transition was revaled in 3D LSMO nanofilms on ZnO nanorod array with decreasing nanofilm thickness, due to a large surface dispersion effect. The LSMO/ZnO nanofilm/nanorod structures could open up new avenues for intriguing magnetic properties studies and applications of nanoscale perovskites.

  9. Dual nature of 3 d electrons in YbT 2 Zn 20 (T = Co; Fe) evidenced by electron spin resonance

    SciTech Connect (OSTI)

    Ivanshin, V. A.; Litvinova, T. O.; Gimranova, K.; Sukhanov, A. A.; Jia, S.; Bud'ko, S. L.; Canfield, P. C.

    2015-03-18

    The electron spin resonance experiments were carried out in the single crystals YbFe2Zn20. The observed spin dynamics is compared with that in YbCo2Zn20 and Yb2Co12P7 as well as with the data of inelastic neutron scattering and electronic band structure calculations. Our results provide direct evidence that 3d electrons are itinerant in YbFe2Zn20 and localized in YbCo2Zn20. Possible connection between spin paramagnetism of dense heavy fermion systems, quantum criticality effects, and ESR spectra is discussed.

  10. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  11. Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu; Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo

    2014-09-07

    We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

  12. Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition: Preprint

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Christensen, S.; Mann, J.; To, B.; Ramanathan, K.; Noufi, R.; Furtak, T. E.; Levi, D.

    2012-06-01

    Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(InxGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition.

  13. Fine precipitation scenarios of AlZnMg(Cu) alloys revealed by advanced atomic-resolution electron microscopy study Part I: Structure determination of the precipitates in AlZnMg(Cu) alloys

    SciTech Connect (OSTI)

    Liu, J.Z.; Chen, J.H.; Yuan, D.W.; Wu, C.L.; Zhu, J.; Cheng, Z.Y.

    2015-01-15

    Although they are among the most important precipitation-hardened materials for industry applications, the high-strength AlZnMg(Cu) alloys have thus far not yet been understood adequately about their underlying precipitation scenarios in relation with the properties. This is partly due to the fact that the structures of a number of different precipitates involved in electron microscopy in association with quantitative image simulations have to be employed; a systematic study of these hardening precipitates in different alloys is also necessary. In Part I of the present study, it is shown that there are five types of structurally different precipitates including the equilibrium η-phase precipitate. Using two state-of-the-art atomic-resolution imaging techniques in electron microscopy in association with quantitative image simulations, we have determined and clarified all the unknown precipitate structures. It is demonstrated that atomic-resolution imaging can directly suggest approximate structure models, whereas quantitative image analysis can refine the structure details that are much smaller than the resolution of the microscope. This combination is crucially important for solving the difficult structure problems of the strengthening precipitates in AlZnMg(Cu) alloys. - Highlights: Part I: • We determine and verify all the key precipitate structures in AlMgZn(Cu) alloys. • We employ aberration-corrected scanning transmission electron microscopy (STEM). • We use aberration-corrected high-resolution TEM (HRTEM) for the investigations. • We obtain atomic-resolution images of the precipitates and model their structures. • We refine all precipitate structures with quantitative image simulation analysis. Part II: • The hardening precipitates in AlZnMg alloys shall be classified into two groups. • Two precipitation scenarios coexist in the alloys. • The precipitation behavior of such an alloy depends on the alloy's composition. • Very detailed phase/structure transformations among the precipitates are revealed.

  14. Understanding the Cu-Zn brass alloys using a short-range-order cluster model: Significance of specific compositions of industrial alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hong, H. L.; Wang, Q.; Dong, C.; Liaw, Peter K.

    2014-11-17

    Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn a-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu12]Zn1,6 and [Zn-Cu12](Zn,Cu)6, which explain the a-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent the 1st-neighbor cluster, and eachmore » cluster is matched with one to six 2nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1st- and 2nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. The revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, therefore offering a fundamental and practical method towards composition interpretations of all kinds of alloys.« less

  15. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    SciTech Connect (OSTI)

    Evtodiev, I.; Caraman, I.; Leontie, L.; Rusu, D.-I.; Dafinei, A.; Nedeff, V.; Lazar, G.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  16. Understanding the Cu-Zn brass alloys using a short-range-order cluster model: Significance of specific compositions of industrial alloys

    SciTech Connect (OSTI)

    Hong, H. L.; Wang, Q.; Dong, C.; Liaw, Peter K.

    2014-11-17

    Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn a-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu12]Zn1,6 and [Zn-Cu12](Zn,Cu)6, which explain the a-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent the 1st-neighbor cluster, and each cluster is matched with one to six 2nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1st- and 2nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. The revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, therefore offering a fundamental and practical method towards composition interpretations of all kinds of alloys.

  17. Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature

    SciTech Connect (OSTI)

    Singh, Anil; Chaudhary, Sujeet; Pandya, D. K.

    2013-04-29

    The room temperature deposited ZnO:H thin films having high conductivity of 500 Ohm-Sign {sup -1} cm{sup -1} and carrier concentration reaching 1.23 Multiplication-Sign 10{sup 20} cm{sup -3} were reactively sputter deposited on glass substrates in the presence of O{sub 2} and 5% H{sub 2} in Ar. A metal-semiconductor transition at 165 K is induced by the increasing hydrogen incorporation in the films. Hydrogen forms shallow donor complex with activation energy of {approx}10-20 meV at oxygen vacancies (V{sub O}) leading to increase in carrier concentration. Hydrogen also passivates V{sub O} and V{sub Zn} causing {approx}4 times enhancement of mobility to 25.4 cm{sup 2}/V s. These films have potential for use in transparent flexible electronics.

  18. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  19. Near-resonant second-order nonlinear susceptibility in c-axis oriented ZnO nanorods

    SciTech Connect (OSTI)

    Liu, Weiwei; Wang, Kai; Long, Hua; Wang, Bing Lu, Peixiang; Chu, Sheng

    2014-08-18

    Near-resonant second-harmonic generation (SHG) in c-axis oriented ZnO nanorods is studied under the femtosecond laser with wavelength from 780?nm to 810?nm. A highly efficient SHG is obtained, which is attributed to the d{sub 131} component of the second-order nonlinear susceptibility. The largest d{sub 131} value is estimated to be 10.2?pm/V at the pumping wavelength of 800?nm, which indicates a large SHG response of the c-axis oriented ZnO nanorods in the near-resonant region. Theoretical calculation based on finite-difference time-domain simulation suggests a four-fold local-field enhancement of the SHG.

  20. Fusion Cross Section in the {sup 4,6}He+{sup 64}Zn Collisions Around the Coulomb Barrier

    SciTech Connect (OSTI)

    Fisichella, M.; Di Pietro, A.; Figuera, P.; Marchetta, C.; Lattuada, M.; Musumarra, A.; Pellegriti, M. G.; Scuderi, V.; Strano, E.; Torresi, D.; Milin, M.; Skukan, N.; Zadro, M.

    2011-10-28

    New fusion data for the {sup 4}He+{sup 64}Zn system at sub-barrier energies are measured to cover the same energy region of previous measurements for {sup 6}He+{sup 64}Zn. Aim of the experiment was to compare the fusion excitation functions for the two system to investigate on the effects of the {sup 6}He neutron-halo structure on the fusion reaction mechanism at energies around the Coulomb barrier. The fusion cross section was measured by using an activation technique. Comparing the two systems, we observe an enhancement of the fusion cross section in the reaction induced by {sup 6}He, at and below the Coulomb barrier.

  1. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    SciTech Connect (OSTI)

    Lee, J. J.; Xing, G. Z. Yi, J. B.; Li, S.; Chen, T.; Ionescu, M.

    2014-01-06

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  2. Study of 57 Fe Mössbauer effect in RFe2Zn20 ( R = Lu, Yb, Gd)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bud’ko, Sergey L.; Kong, Tai; Ma, Xiaoming; Canfield, Paul C.

    2015-08-04

    In this document we report measurements of 57Fe Mössbauer spectra for RFe2Zn20 (R = Lu, Yb, Gd) from ~ 4.5 K to room temperature. The obtained isomer shift values are very similar for all three compounds, their temperature dependence was analyzed within the Debye model and resulted in an estimate of the Debye temperatures of 450-500 K. The values of quadrupole splitting at room temperature change with the cubic lattice constant a in a linear fashion. For GdFe2Zn20, ferromagnetic order is seen as an appearance of a sextet in the spectra. The 57Fe site hyperfine field for T → 0more » was evaluated to be ~ 2.4 T.« less

  3. Methanol Synthesis over Cu/ZnO/Al2O3: The Active Site in Industrial Catalysis

    SciTech Connect (OSTI)

    Behrens, Malte

    2012-03-28

    Unlike homogeneous catalysts, heterogeneous catalysts that have been optimized through decades are typically so complex and hard to characterize that the nature of the catalytically active site is not known. This is one of the main stumbling blocks in developing rational catalyst design strategies in heterogeneous catalysis. We show here how to identify the crucial atomic structure motif for the industrial Cu/ZnO/Al{sub 2}O{sub 3} methanol synthesis catalyst. Using a combination of experimental evidence from bulk-, surface-sensitive and imaging methods collected on real high-performance catalytic systems in combination with DFT calculations. We show that the active site consists of Cu steps peppered with Zn atoms, all stabilized by a series of well defined bulk defects and surface species that need jointly to be present for the system to work.

  4. Synthesis and X-ray diffraction study of Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} solid solutions

    SciTech Connect (OSTI)

    Sheleg, A. U. Hurtavy, V. G.; Chumak, V. A.

    2015-09-15

    Quaternary compounds Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} and solid solutions on their basis have been fabricated by one-temperature synthesis from elementary components: Cu, Zn, Sn, S, and Se. Single crystals of these compounds have been grown by the method of chemical gas-transport reactions from polycrystalline samples. The compositional dependence of the unit-cell parameters of Cu{sub 2}ZnSn(S{sub x}Se{sub 1–x}){sub 4} has been investigated by X-ray diffraction. It is found that parameters a and c linearly decrease with an increase in sulfur concentration in accordance with Vegard’s law. The temperature dependences of parameters a and thermalexpansion coefficients α{sub a} of Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} single crystals in the range of 100–300 K are determined.

  5. Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells

    SciTech Connect (OSTI)

    Cheun, H.; Fuentes-Hernandez, C.; Shim, J.; Fang, Y.; Cai, Y.; Li, H.; Sigdel, A. K.; Meyer, J.; Maibach, J.; Dindar, A.; Zhou, Y.; Berry, J. J.; Bredas, J. L.; Kahn, A.; Sandhage, K. H.; Kippelen, B.

    2012-04-10

    Atomic layer deposition is used to synthesize Al{sub 2}O{sub 3}:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron-selective electrodes in polymer-based inverted solar cells. Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 x 10{sup 3} S cm{sup 01}; more than six times higher than for neat ZnO films), while retaining a high optical transmittance ({>=}80% in the visible region) and a low work function (4.0 eV). Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al{sub 2}O{sub 3}:ZnO film composition. Polymer-based inverted solar cells using poly(3-hexylthiophene) (P3HT):phenyl-C{sub 61}-butyric acid methyl ester (PCBM) mixtures in the active layer and Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates as transparent electron-selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm{sup -2} illumination.

  6. Structural and magnetic properties of triethylene glycol stabilized Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} nanoparticles

    SciTech Connect (OSTI)

    Sozeri, H.; Durmus, Z.; Baykal, A.

    2012-09-15

    Highlights: ? Monodispersed TREG stabilized Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} NP's were prepared via hydrothermal method. ? Zn{sub x0.6}Co{sub 0.4}Fe{sub 2}O{sub 4} NP's has superparamagnetic behavior like absence of saturation at high fields. ? The lattice parameter (a{sub o}) increases linearly with the addition of Zn and follows Vegard's law. -- Abstract: Zn substituted cobalt ferrite nanoparticles having formula of Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} (x = 0.01.0) were prepared by hydrothermal technique. In this process, triethylene glycol was used as a solvent and surfactant, anhydrous sodium hydroxide was used as an alkalinity additive. Investigation of the structural, morphological and thermal properties were carried out using X-ray diffraction (XRD), infrared spectroscopy (FT-IR), transmission electron spectroscopy (TEM) and thermal analysis (TGA) respectively. The X-ray diffraction study reveals that the lattice constant of cobalt ferrite increases with the increase of Zn content. Magnetization measurements showed that as zinc concentration increases saturation magnetization initially stays constant and then decreases monotically. Samples having high zinc concentration (x ? 0.6) have superparamagnetic behavior like absence of saturation at high fields, low saturation magnetization values and immeasurable coercivity. These features were explained by surface spin disorder and canted spins.

  7. Visible-light photoconductivity of Zn1-xCoxO and its dependence on Co2+ concentration

    SciTech Connect (OSTI)

    Johnson, Claire A.; Cohn, Alicia; Kaspar, Tiffany C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2011-09-06

    Many metal oxides investigated for solar photocatalysis or photoelectrochemistry have band gaps that are too wide to absorb a sufficient portion of the solar spectrum. Doping with impurity ions has been extensively explored as a strategy to sensitize such oxides to visible light, but the electronic structures of the resulting materials are frequently complex and poorly understood. Here, we report a detailed photoconductivity investigation of the wide-gap II-VI semiconductor ZnO doped with Co2+ (Zn1-xCoxO), which responds to visible light in photoelectrochemical and photoconductivity experiments and thus represents a well-defined model system for understanding dopant-sensitized oxides. Variable-temperature scanning photoconductivity measurements have been performed on high-structural-quality Zn1-xCoxO epitaxial films to examine the relationship between dopant concentration (x) and visible-light photoconductivity, with particular focus on mid-gap d-d photoactivity. Excitation into the intense 4T1(P) d-d band at ~2.0 eV (620 nm) leads to Co2+/3+ ionization with a quantum efficiency that increases with decreasing cobalt concentration and increasing sample temperature. Both spontaneous and thermally assisted ionization from the Co2+ d-d excited state are found to become less effective as x is increased, attributed to an increasing conduction-band-edge potential. These trends counter the increasing light absorption with increasing x, explaining the experimental maximum in external photon-to-current conversion efficiencies at values well below the solid solubility of Co2+ in ZnO.

  8. ß-delayed γ-proton decay in ⁵⁶Zn: Analysis of the charged-particle spectrum

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Orrigo, S. E.A.; Rubio, B.; Fujita, Y.; Blank, B.; Gelletly, W.; Agramunt, J.; Algora, A.; Ascher, P.; Bilgier, B.; Cáceres, L.; et al

    2015-01-01

    A study of the β decay of the proton-rich Tz = –2 nucleus ⁵⁶Zn has been reported in a recent publication. A rare and exotic decay mode, β-de-layed γ-proton decay, has been observed there for the first time in the fp shell. Here, we expand on some of the details of the data analysis, focusing on the charged particle spectrum.

  9. Improvement of the photoluminescent intensity of ZnTa{sub 2}O{sub 6}:Pr{sup 3+} phosphor

    SciTech Connect (OSTI)

    Noto, L.L. Ntwaeaborwa, O.M.; Yagoub, M.Y.A.; Swart, H.C.

    2014-07-01

    Highlights: The optimal luminescence intensity was obtained for 0.4 mol% Pr{sup 3+} doped ZnTa{sub 2}O{sub 6}. The ZnTa{sub 2}O{sub 6}:Pr{sup 3+} has a colour index matching an ideal red emission. The cross relaxation process led to a decrease in red emission at higher Pr{sup 3+} concentrations. The blue emission continues to increase at higher Pr{sup 3+} concentrations. The persistent luminescent increases with an increase in Pr{sup 3+} concentration. - Abstract: A red emitting ZnTa{sub 2}O{sub 6}:Pr{sup 3+} phosphor with Commission Internationale de lEclairage coordinates that match those of an ideal red emission was prepared by solid state chemical reaction. X-ray diffraction confirmed that a pure orthorhombic phase of ZnTa{sub 2}O{sub 6} was crystallized. A homogeneous distribution of the Pr{sup 3+} ions was confirmed from the analysis of the time of flight secondary ion mass spectroscopy overlay images. In addition to the reflectance at 259 nm associated with band-to-band absorption, minor reflectance peaks associated with f-f transitions of Pr{sup 3+} were observed at 420500 nm. The main red emission peak was split into minor peaks located at 608, 619 and 639 nm that were assigned to {sup 1}D{sub 2} ? {sup 3}H{sub 4}, {sup 3}P{sub 0} ? {sup 3}H{sub 6} and {sup 3}P{sub 0} ? {sup 3}F{sub 2} transitions of Pr{sup 3+}, respectively. With increasing concentration of Pr{sup 3+}, a relatively weak blue emission was observed at 488 nm and this phenomenon maybe attributed to virtual charge transfer or/and inter cross relaxation effects. The decay characteristics of the persistent emission were also calculated.

  10. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H

    SciTech Connect (OSTI)

    Look, David; Droubay, Timothy C.; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

    2011-01-11

    Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

  11. Luminescence and electrical properties of solution-processed ZnO thin films by adding fluorides and annealing atmosphere

    SciTech Connect (OSTI)

    Choi, Sungho; Park, Byung-Yoon; Jung, Ha-Kyun

    2011-06-15

    Highlights: {yields} Systematic study of the fluorides doped solution-processed ZnO thin films via the luminescence and electrical behaviors. {yields} Defect-related visible emission bands are affected by annealing ambient and fluoride addition. {yields} Adding lithium fluoride followed by annealing in oxygen ambient leads to a controlled defect density with proper TFT performance. -- Abstract: To develop an efficient channel layer for thin film transistors (TFTs), understanding the defect-related luminescence and electrical property is crucial for solution-processed ZnO thin films. Film growth with the fluorides addition, especially using LiF, followed by the oxygen ambient post-annealing leads to decreased defect-related emission as well as enhanced switching property. The saturation mobility and current on/off ratio are 0.31 cm{sup 2} V{sup -1} s{sup -1} and 1.04 x 10{sup 3}. Consequently, we can visualize an optimized process condition and characterization method for solution-processed TFT based on the fluorine-doped ZnO film channel layer by considering the overall emission behavior.

  12. Structural, optical, and magnetic properties of (Co, Cu)-codoped ZnO films with different Co concentrations

    SciTech Connect (OSTI)

    Xu, M. Yuan, H. Zhou, P. F.; Dong, C. J.; You, B.; Duan, M. Y.

    2014-03-07

    Zn{sub 0.99-x}Co{sub x}Cu{sub 0.01}O films with different Co concentrations from 0% to 20% were fabricated by a sol-gel method. Moderate Co doping is found to improve the surface uniformity and crystal quality of the films, and causes a redshift of the band edge of Zn(Co,Cu) films. X-ray photoelectron spectroscopy reveals that the introduction of Co ions causes the valence state of Cu to change from +2 to +1; while at Co concentrations lower than 10%, the Co exists in the +2 valence state. Strong blue emission at ∼420 and 440 nm are observed, decreasing with increasing Co concentration, but becoming strong again as the concentration is increased to 20%. Enhanced room-temperature ferromagnetism is observed for the (Co, Cu)-codoped ZnO films at Co concentrations lower than 10%. These interesting magnetic properties are explained based on charge transfer, together with the defect-related model for ferromagnetism.

  13. Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    SciTech Connect (OSTI)

    Baruah, Sunandan; Dutta, Joydeep; Sinha, Sudarson Sekhar; Ghosh, Barnali; Pal, Samir Kumar; Raychaudhuri, A. K.

    2009-04-01

    Wide band gap metal oxide semiconductors such as zinc oxide (ZnO) show visible band photolysis that has been employed, among others, to degrade harmful organic contaminants into harmless mineral acids. Metal oxides show enhanced photocatalytic activity with the increase in electronic defects in the crystallites. By introducing defects into the crystal lattice of ZnO nanoparticles, we observe a redshift in the optical absorption shifting from the ultraviolet region to the visible region (400-700 nm), which is due to the creation of intermediate defect states that inhibit the electron hole recombination process. The defects were introduced by fast nucleation and growth of the nanoparticles by rapid heating using microwave irradiation and subsequent quenching during the precipitation reaction. To elucidate the nature of the photodegradation process, picosecond resolved time correlated single photon count (TCSPC) spectroscopy was carried out to record the electronic transitions resulting from the de-excitation of the electrons to their stable states. Photodegradation and TCSPC studies showed that defect engineered ZnO nanoparticles obtained through fast crystallization during growth lead to a faster initial degradation rate of methylene blue as compared to the conventionally synthesized nanoparticles.

  14. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang; Yang, Xiaoxia; Liu, Mingju; Tao, Zhi; Wei, Lei Li, Chi Zhang, Xiaobing; Wang, Baoping; Dai, Qing; Nathan, Arokia

    2014-03-17

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  15. ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint

    SciTech Connect (OSTI)

    Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R.; Coutts,T. J.

    2008-05-01

    Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.

  16. Investigation of defects in InGaZn oxide thin film using electron spin resonance signals

    SciTech Connect (OSTI)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

    2014-04-28

    InGaZn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g?=?2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g?=?1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  17. Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

    SciTech Connect (OSTI)

    Kurtz, A.; Hierro, A. Muoz, E.

    2014-02-24

    A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V}?+?0.47?eV, E{sub V}?+?0.35?eV, and E{sub V}?+?0.16?eV are observed in all films with concentrations in the range of 10{sup 15}10{sup 18}?cm{sup ?3}. The two shallowest traps at E{sub V}?+?0.35?eV and E{sub V}?+?0.16?eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.

  18. High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

    SciTech Connect (OSTI)

    Mendelsberg, Rueben J.; Lim, S.H.N.; Milliron, D.J.; Anders, Andre

    2010-11-18

    High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.

  19. Zirconium doped nano-dispersed oxides of Fe, Al and Zn for destruction of warfare agents

    SciTech Connect (OSTI)

    Stengl, Vaclav; Houskova, Vendula; Bakardjieva, Snejana; Murafa, Nataliya; Marikova, Monika; Oplustil, Frantisek; Nemec, Tomas

    2010-11-15

    Zirconium doped nano dispersive oxides of Fe, Al and Zn were prepared by a homogeneous hydrolysis of the respective sulfate salts with urea in aqueous solutions. Synthesized metal oxide hydroxides were characterized using Brunauer-Emmett-Teller (BET) surface area and Barrett-Joiner-Halenda porosity (BJH), X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX). These oxides were taken for an experimental evaluation of their reactivity with sulfur mustard (HD or bis(2-chloroethyl)sulfide), soman (GD or (3,3'-Dimethylbutan-2-yl)-methylphosphonofluoridate) and VX agent (S-[2-(diisopropylamino)ethyl]-O-ethyl-methylphosphonothionate). The presence of Zr{sup 4+} dopant can increase both the surface area and the surface hydroxylation of the resulting doped oxides, decreases their crystallites' sizes thereby it may contribute in enabling the substrate adsorption at the oxide surface thus it can accelerate the rate of degradation of warfare agents. Addition of Zr{sup 4+} converts the product of the reaction of ferric sulphate with urea from ferrihydrite to goethite. We found out that doped oxo-hydroxides Zr-FeO(OH) - being prepared by a homogeneous hydrolysis of ferric and zirconium oxo-sulfates mixture in aqueous solutions - exhibit a comparatively higher degradation activity towards chemical warfare agents (CWAs). Degradation of soman or VX agent on Zr-doped FeO(OH) containing ca. 8.3 wt.% of zirconium proceeded to completion within 30 min.

  20. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect (OSTI)

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  1. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  2. Assessment of retrogression and re-aging treatment on microstructural and mechanical properties of Al-Zn-Mg-Cu P/M alloy

    SciTech Connect (OSTI)

    Naeem, Haider T.; Mohammad, Kahtan S.; Hussin, Kamarudin; Tan, T. Qing; Idris, M. Sobri

    2015-05-15

    In order to understand the importance of the retrogression and re-aging as a heat treatment for improving microstructural and mechanical properties of the Al-Zn-Mg-Cu powder metallurgy alloys, Al-Zn-Mg-Cu-Fe-Cr alloys were fabricated from the elemental powders. Green compacts are compressed under compaction pressure about 370 MPa. The sintering process carried out for the samples of aluminum alloys at temperature was 650°C under argon atmosphere for two hours. The sintered compacts were subjected into homogenizing condition at 470°C for 1.5 hours and then aged at 120°C for 24 hours (T6 temper) after that it carried out the retrogressed at 180°C for 30 min., and then re-aged at 120°C for 24 hours (RRA). Observations microstructures were examined using optical, scanning electron microscopy coupled with energy dispersive spectroscopy and X-ray diffraction. Density and porosity content was conducted for the samples of alloys. The result showing that the highest Vickers hardness exhibited for an Al-Zn-Mg-Cu alloy after underwent the retrogression and reaging treatment. Increasing in hardness was because of the precipitation hardening through precipitate the (Mg Zn) and (Mg{sub 2}Zn{sub 11}) phases during matrix of aluminum-alloy.

  3. Highly efficient photocatalysis of p-type Cu{sub 2}ZnSnS{sub 4} under visible-light illumination

    SciTech Connect (OSTI)

    Hou, Xian; Li, Yan Yan, Jian-Jun; Wang, Cheng-Wei

    2014-12-15

    Highlights: Kesterite CZTS nanocrystal powder was synthesized by one-pot method. First successful use CZTS nanocrystal powder as photocatalyst. CZTS shows an efficient photocatalysis under visible light irradiation. CZTS photocatalyst having excellent stability. - Abstract: Cu{sub 2}ZnSnS{sub 4}, as a very promising p-type semiconductor material, has been extensively used in the study of solar cells owing to its suitable band gap (1.11.5 eV), large absorption coefficient of 10{sup 4} cm{sup ?1} in the visible spectrum, good photo stability, nontoxicity and relative abundance of the component elements. In this paper, we have successfully synthesized p-type kesterite Cu{sub 2}ZnSnS{sub 4} nanocrystal powder by facile one-pot method, and made our first successful attempt to use Cu{sub 2}ZnSnS{sub 4} nanocrystal powder as a photocatalyst to degradation methyl orange under visible-light irradiation. The exciting results show that in the visible light region, Cu{sub 2}ZnSnS{sub 4} nanocrystal powder possesses an excellent photocatalytic performance of K = 0.0317 min{sup ?1}, nearly about 6 times of well known commercial P25 titania powder performance under the same conditions, which suggests that the p-type kesterite Cu{sub 2}ZnSnS{sub 4} nanocrystal would be a promising candidate of photocatalyst.

  4. Preparation of magnetic photocatalyst nanoparticlesTiO{sub 2}/SiO{sub 2}/MnZn ferriteand its photocatalytic activity influenced by silica interlayer

    SciTech Connect (OSTI)

    Laohhasurayotin, Kritapas; Pookboonmee, Sudarat; Viboonratanasri, Duangkamon; Kangwansupamonkon, Wiyong

    2012-06-15

    Highlights: ? TiO{sub 2}/SiO{sub 2}/MnZn ferrite acts as magnetic photocatalyst nanoparticle. ? SiO{sub 2} interlayer is used to prevent electron migration between photocatalyst and magnetic core. ? TiO{sub 2}/MnZn ferrite without SiO{sub 2} interlayer shows poor magnetic and photocatalytic property. -- Abstract: A magnetic photocatalyst, TiO{sub 2}/SiO{sub 2}/MnZn ferrite, was prepared by stepwise synthesis involving the co-precipitation of MnZn ferrite as a magnetic core, followed by a coating of silica as the interlayer, and titania as the top layer. The particle size and distribution of magnetic nanoparticles were found to depend on the addition rate of reagent and dispersing rate of reaction. The X-ray diffractometer and transmission electron microscope were used to examine the crystal structures and the morphologies of the prepared composites. Vibrating sample magnetometer was also used to reveal their superparamagnetic property. The UVVis spectrophotometer was employed to monitor the decomposition of methylene blue in the photocatalytic efficient study. It was found that at least a minimum thickness of the silica interlayer around 20 nm was necessary for the inhibition of electron transference initiated by TiO{sub 2} and MnZn ferrite.

  5. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect (OSTI)

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  6. Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Abdel-Basset, D.M.; Yakuphanoglu, F.

    2014-01-01

    Graphical abstract: - Highlights: XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. CV, GV and R{sub s}V of the diode characteristics have been analyzed for the first time. Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. The interfaces states were determined using conductancevoltage technique. ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitancevoltage (CV) and conductancevoltage (GV) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (??), dielectric loss (??), loss tangent (tan ?) and the AC conductivity (?{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{sub s} have a significant effect on the electrical characteristics of the studied diode.

  7. Comprehensive {gamma}-ray spectroscopy of rotational bands in the N=Z+1 nucleus {sup 61}Zn

    SciTech Connect (OSTI)

    Andersson, L.-L.; Rudolph, D.; Johansson, E. K.; Andreoiu, C.; Ekman, J.; Fahlander, C.; Rietz, R. du; Ragnarsson, I.; Torres, D. A.; Carpenter, M. P.; Seweryniak, D.; Zhu, S.; Charity, R. J.; Chiara, C. J.; Hoel, C.; Reviol, W.; Sarantites, D. G.; Sobotka, L. G.; Pechenaya, O. L.

    2009-02-15

    The {sub 30}{sup 61}Zn{sub 31} nucleus has been studied via the combined data of two fusion-evaporation reaction experiments using a {sup 36}Ar beam and a {sup 28}Si target foil. The experimental setups involved the Ge array GAMMASPHERE and neutron and charged particle detectors placed around the target position. The resulting level scheme comprises about 120 excited states connected via some 180 {gamma}-ray transitions. In total, seven rotational structures were identified up to I{approx}25 or higher and compared with predictions from cranked Nilsson-Strutinsky calculations.

  8. Down-conversion photoluminescence sensitizing plasmonic silver nanoparticles on ZnO nanorods to generate hydrogen by water splitting photochemistry

    SciTech Connect (OSTI)

    Kung, Po-Yen; Huang, Li-Wen; Shen, Tin-Wei; Wang, Wen-Lin; Su, Yen-Hsun; Lin, Melody I.

    2015-01-12

    Silver nanoparticles fabricated onto the surface of the ZnO nanorods form the photoanode and generate photoelectric current due to surface plasmon resonance, which serves as anode electrodes in photoelectrochemical hydrogen production. In order to increase the absorption spectrum of photoanode, organic pigments were utilized as photo-sensitizers to generate down-conversion photoluminescence to excite surface plasmon resonances of silver nanoparticles. The way of using light to carry the energy in electronic scattering regime runs the system for the enhancement of solar water splitting efficiency. It was significantly tuned in environmentally sustainable applications for power generation and development of alternative energy.

  9. Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zuo Zheng; Morshed, Muhammad; Liu Jianlin; Beyermann, W. P.; Zheng Jianguo; Xin Yan

    2013-03-15

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

  10. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K

    SciTech Connect (OSTI)

    Quitsch, Wolf; Kmmell, Tilmar; Bacher, Gerd; Gust, Arne; Kruse, Carsten; Hommel, Detlef

    2014-09-01

    High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28??0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

  11. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    SciTech Connect (OSTI)

    Sklyarchuk, V.; Fochuk, p.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O. F.; Bolotnikov, A. E.; James, R. B.

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  12. A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

    SciTech Connect (OSTI)

    Chen Minchen; Huang Shengyao; Chen Shihching; Chang Tingchang; Chang Kuanchang; Li Hungwei; Lu Jin; Shi Yi

    2009-04-20

    A low-temperature method, supercritical CO{sub 2} (SCCO{sub 2}) fluid technology, is employed to improve the device properties of ZnO TFT at 150 deg. C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO{sub 2} fluid which is mixed with 5 ml pure H{sub 2}O. After SCCO{sub 2} treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn-O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.

  13. Efficient enhancement of hydrogen production by Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrochemical cell

    SciTech Connect (OSTI)

    Liu, Ying; Ren, Feng Chen, Chao; Liu, Chang; Xing, Zhuo; Liu, Dan; Xiao, Xiangheng; Wu, Wei; Zheng, Xudong; Liu, Yichao; Jiang, Changzhong; Shen, Shaohua; Fu, Yanming

    2015-03-23

    Highly efficient semiconductor photoelectrodes for solar hydrogen production through photocatalytic water splitting are a promising and challenge solution to solve the energy problems. In this work, Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrode was designed and prepared. An increase of 11 times of photocurrent is achieved in the Ag/Cu{sub 2}O/ZnO photoelectrode comparing to that of the Cu{sub 2}O film. The high performance of the Ag/Cu{sub 2}O/ZnO film is due to the optimized design of the tandem triple-junction structure, where the localized surface Plasmon resonance of Ag and the hetero-junctions efficiently absorb solar energy, produce, and separate electron-hole pairs in the photocathode.

  14. Mg{sub x}Zn{sub 1-x}O (x = 0-1) films fabricated by sol-gel spin coating

    SciTech Connect (OSTI)

    Caglar, Mujdat [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey)] [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey); Wu, Junshu; Li, Keyan [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China); Caglar, Yasemin; Ilican, Saliha [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey)] [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey); Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

    2010-03-15

    Mg{sub x}Zn{sub 1-x}O films were deposited onto the glass substrate by a sol-gel spin coating method. The drying and annealing temperatures were 300 and 500 {sup o}C in air. As x varies from 0 to 1, it was observed that the crystal structure is changed from wurtzite ZnO to cubic MgO. The morphology characterizations of these films were observed by scanning electron microscope. The randomly oriented hexagonal nanorods were gown on the glass surface when x = 0 and 0.25, which became disappeared with increasing Mg contents. The optical properties of these films were investigated by room-temperature photoluminescence (PL) and UV-vis absorption spectra, which show that the optical band gap and photoluminescence in the visible and UV regions can be ideally tuned by varying the Mg contents in the Mg{sub x}Zn{sub 1-x}O alloy films.

  15. Preparation of aluminum foil-supported nano-sized ZnO thin films and its photocatalytic degradation to phenol under visible light irradiation

    SciTech Connect (OSTI)

    Peng Feng . E-mail: cefpeng@scut.edu.cn; Wang Hongjuan; Yu Hao; Chen Shuihui

    2006-11-09

    The zinc oxide thin films on aluminum foil have been successfully prepared by sol-gel method with methyl glycol as solvent. The film was characterized by means of XRD, TG, UV-vis, SEM and AFM, which show that the ZnO/Al film is formed by a layer of ZnO nano-sized particles with average diameter of 52.2 nm. Under the initial concentration of 20 mg/L phenol solution (500 mL) and visible light irradiation time of 3 h, more than 40% of the initial phenol was totally mineralized using two pieces of ZnO/Al thin film as photocatalyst with an efficient irradiation area of 400 cm{sup 2}. It is a promising visible light responded photocatalyst for the activation of O{sub 2} at room temperature to degrade organic pollutants.

  16. Structure and optical homogeneity of LiNbO{sub 3}:Zn (0.03–4.5 mol.%) crystals

    SciTech Connect (OSTI)

    Sidorov, Nikolay E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Tepljakova, Natalja E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Gabain, Aleksei E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Yanichev, Aleksander E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Palatnikov, Mikhail E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru

    2014-11-14

    Structure and optical homogeneity of LiNbO{sub 3}:Zn (0.03–4.5 mol.%) crystals were searched by photoinduced light scattering and by Raman spectroscopy. The photorefractive effect depends on Zn{sup 2+} concentration nonmonotonically. Decrease of photorefractive effect is explained by decrease of structure defects with localized electrons. The Zn{sup 2+} cations replace structure defects Nb{sub Li} and Li{sub Nb}, trapping levels appear near the bottom of the conduction band and photo electrons recombine with emission under laser radiation. By the Raman spectra the area of the high structure order is found. In this area the own alternation, the alternation of impurity cations and the vacancies along the polar axis is almost perfect.

  17. Linear and nonlinear transmission of Fe{sup 2+}-doped ZnSe crystals at a wavelength of 2940 nm in the temperature range 20220 C

    SciTech Connect (OSTI)

    Il'ichev, N N; Pashinin, P P; Gulyamova, E S; Bufetova, G A; Shapkin, P V; Nasibov, A S

    2014-03-28

    The linear and nonlinear transmission of Fe{sup 2+}:ZnSe crystals is measured at a wavelength of 2940 nm in the temperature range 20 220 C. It is found that, with increasing temperature from 20 C to 150 220 C, the transmission of Fe{sup 2+}:ZnSe crystals decreases in the case of incident radiation with an intensity of ?5.5 MW cm{sup -2} and increases in the case of radiation with an intensity of 28 kW cm{sup -2}. At a temperature of 220 C, the linear transmission almost coincides with the nonlinear transmission. The transmission spectra of Fe{sup 2+}:ZnSe crystals at temperatures of 22 and 220 C in the wavelength range 500 7000 nm are presented. (active media)

  18. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng; Li Xiaomin; Gan Xiaoyan; Sellers, Ian R.

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  19. Ag{sub 3}PO{sub 4}/ZnO: An efficient visible-light-sensitized composite with its application in photocatalytic degradation of Rhodamine B

    SciTech Connect (OSTI)

    Liu, Wei; School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 ; Wang, Mingliang; Xu, Chunxiang; Chen, Shifu; Fu, Xianliang

    2013-01-15

    Graphical abstract: The free OH radicals generated in the VB of ZnO play the primary role in the visible-light photocatalytic degradation of RhB in Ag{sub 3}PO{sub 4}/ZnO system. The accumulated electrons in the CB of Ag{sub 3}PO{sub 4} can be transferred to O{sub 2} adsorbed on the surface of the composite semiconductors and H{sub 2}O{sub 2} yields. H{sub 2}O{sub 2} reacts with electrons in succession to produce active OH to some extent. Display Omitted Highlights: ? Efficient visible-light-sensitized Ag{sub 3}PO{sub 4}/ZnO composites were successfully prepared. ? Effect of Ag{sub 3}PO{sub 4} content on the catalytic activity of Ag{sub 3}PO{sub 4}/ZnO is studied in detail. ? Rate constant of RhB degradation over Ag{sub 3}PO{sub 4}(3.0 wt.%)/ZnO is 3 times that of Ag{sub 3}PO{sub 4}. ? The active species in RhB degradation are examined by adding a series of scavengers. ? Visible light degradation mechanism of RhB over Ag{sub 3}PO{sub 4}/ZnO is systematically studied. -- Abstract: The efficient visible-light-sensitized Ag{sub 3}PO{sub 4}/ZnO composites with various weight percents of Ag{sub 3}PO{sub 4} were prepared by a facile ball milling method. The photocatalysts were characterized by XRD, DRS, SEM, EDS, XPS, and BET specific area. The OH radicals produced during the photocatalytic reaction was detected by the TAPL technique. The photocatalytic property of Ag{sub 3}PO{sub 4}/ZnO was evaluated by photocatalytic degradation of Rhodamine B under visible light irradiation. Significantly, the results revealed that the photocatalytic activity of the composites was much higher than that of pure Ag{sub 3}PO{sub 4} and ZnO. The rate constant of RhB degradation over Ag{sub 3}PO{sub 4}(3.0 wt.%)/ZnO is 3 times that of single-phase Ag{sub 3}PO{sub 4}. The optimal percentage of Ag{sub 3}PO{sub 4} in the composite is 3.0 wt.%. It is proposed that the OH radicals produced in the valence band of ZnO play the leading role in the photocatalytic degradation of Rhodamine B by Ag{sub 3}PO{sub 4}/ZnO systems under visible light irradiation.

  20. Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture

    SciTech Connect (OSTI)

    Sago, Keisuke; Fujiwara, Hiroyuki; Kuramochi, Hideto; Iigusa, Hitoshi; Utsumi, Kentaro

    2014-04-07

    Spectroscopic ellipsometry (SE) has been applied to study the effects of grain boundary, humidity, and surface texture on the carrier transport properties of Al-doped ZnO layers fabricated by dc and rf magnetron sputtering. In the SE analysis, the variation in the free carrier absorption toward the growth direction, induced by the ZnO grain growth on foreign substrates, has been modeled explicitly by adopting a multilayer model in which the optical carrier concentration (N{sub opt}) varies continuously with a constant optical mobility (?{sub opt}). The effect of the grain boundary has been studied by comparing ?{sub opt} with Hall mobility (?{sub Hall}). The change in ?{sub Hall}/?{sub opt} indicates a sharp structural transition of the ZnO polycrystalline layer at a thickness of d???500?nm, which correlates very well with the structure confirmed by transmission electron microscopy. In particular, below the transition thickness, the formation of the high density grain boundary leads to the reduction in the ?{sub Hall}/?{sub opt} ratio as well as N{sub opt}. As a result, we find that the thickness dependence of the carrier transport properties is almost completely governed by the grain boundary formation. On the other hand, when the ZnO layer is exposed to wet air at 85?C, ?{sub Hall} reduces drastically with a minor variation of ?{sub opt} due to the enhanced grain boundary scattering. We have also characterized textured ZnO:Al layers prepared by HCl wet etching by SE. The analysis revealed that the near-surface carrier concentration increases slightly after the etching. We demonstrate that the SE technique can be applied to distinguish various rough textured structures (size???1??m) of the ZnO layers prepared by the HCl etching.

  1. Optical/electrical correlations in ZnO: the plasmonic resonance phase diagram

    SciTech Connect (OSTI)

    Look, David C.; Droubay, Timothy C.; Chambers, Scott A.

    2013-08-05

    Following the Drude model for dielectric constant, ?(E) = ??(E) + i???(E), the plasmonic resonance energy Eres in a semiconductor depends on four parameters: ??(?) (or ??) , effective mass m*, optical mobility opt, and optical carrier concentration nopt. By solving the Drude equation at ?(Eres) = 0, we obtain a relationship between opt and nopt at constant Eres [or wavelength ?res(m) = 1.2395/Eres(eV)]. A family of opt vs nopt curves covering a range of ?res values (including the limiting wavelength ?res = ?) constitute a plasmonic resonance phase diagram (PRPD) for a semiconductor defined by only ?? and m*. The PRPD is a convenient instrument that allows an immediate prediction of ?res from Hall-effect measurements of H and nH. Furthermore, if the H/nH point falls outside the family of opt vs nopt curves, it shows that no resonance at all is possible. We apply the PRPD analysis to a series of ten ZnO samples grown by pulsed laser deposition at 200 ?C in an ambient of 33%H2:67%Ar and annealed in 25-?C steps for 10 min in air at various temperatures from 400 ?C to 600 ?C. The unannealed sample had a resistivity ? = 1.67 x 10-4 ?-cm, n = 1.39 x 1021 cm-3, and = 26.8 cm2/V-s, and the 600-?C sample, ? = 1.52 ?-cm, n = 5.03 x 1017 cm-3, and = 8.2 cm2/V-s. Each of the ten H/nH points was plotted on the PRPD. For the samples that were annealed at 550 ?C or lower, the H/nH points yielded predicted values of ?res that ranged from 1.07 to 2.80 m, respectively; however, the 575-?C and 600-?C samples were predicted to have no resonances at all. Reflectance curves for the eight samples annealed up to 550 ?C de-creased slowly from 6 eV down to about 1 eV, and then increased rapidly at an energy evidently close to Eres. In contrast, there was no such increase for the 575-?C and 600-?C samples, and thus presumably, no resonance. Satisfactory agreement is found between the reflectance and Hall-effect-predicted values of ?res.

  2. Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zuo Zheng; Zhou Huimei; Olmedo, Mario J.; Kong Jieying; Liu Jianlin; Beyermann, Ward P.; Zheng Jianguo; Xin Yan

    2012-09-01

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO grown by molecular beam epitaxy. With a low Mn concentration of 2 Multiplication-Sign 10{sup 19} cm{sup -3}, Mn-doped ZnO films exhibited room-temperature ferromagnetism with a coercivity field larger than 200 Oe, a large saturation moment of 6 {mu}{sub B}/ion, and a large residue moment that is {approx}70% of the saturation magnetization. Isolated ions with long range carrier mediated spin-spin coupling may be responsible for the intrinsic ferromagnetism.

  3. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55??m

    SciTech Connect (OSTI)

    Chen, Guopeng; Shen, Aidong; De Jesus, Joel; Tamargo, Maria C.

    2014-12-08

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

  4. Wavelengths, transition probabilities, and oscillator strengths for M-shell transitions in Co-, Ni-, Cu-, Zn-, Ga-, Ge-, and Se-like Au ions

    SciTech Connect (OSTI)

    Xu, Min; Jiang, Gang; Deng, Banglin; Bian, Guojie

    2014-11-15

    Wavelengths, transition probabilities, and oscillator strengths have been calculated for M-shell electric dipole transitions in Co-, Ni-, Cu-, Zn-, Ga-, Ge-, and Se-like Au ions. The fully relativistic multiconfiguration Dirac–Fock method, taking quantum electrodynamical effects and the Breit correction into account, was used in the calculations. Calculated energy levels of M-shell excited states for Cu-, Zn-, Ga-, Ge-, and Se-like Au ions from the method were compared with available theoretical and experimental results, and good agreement with them was achieved.

  5. On the improvement of photovoltaic action of ZnO/P3HT:PCBM by controlling roughness of window layer

    SciTech Connect (OSTI)

    Geethu, R. Menon, M. R. Rajesh Kartha, C. Sudha Vijayakumar, K. P.

    2014-04-24

    Polymer solar cells with configuration ITO/ZnO/P3HT:PCBM/Ag were fabricated using cost effective chemical spray pyrolysis and spin coating techniques. When surface of ZnO layer was modified with a second layer so as to increase the roughness, considerable improvement in cell parameters were observed. Optimum conditions for the required roughness were identified and changes in cell parameters with variation in surface roughness were studied. Major enhancements were observed in the open circuit voltage and in the cell efficiency.

  6. Intensive two-photon absorption induced decay pathway in a ZnO crystal: Impact of light-induced defect state

    SciTech Connect (OSTI)

    Li, Zhong-guo; Wei, Tai-Huei; Yang, Jun-yi; Song, Ying-lin; School of Physical Science and Technology, Soochow University, Suzhou 215006

    2013-12-16

    Using the pump-probe with phase object technique with 20 ps laser pulses at 532 nm, we investigated the carrier relaxation process subsequent to two-photon absorption (TPA) in ZnO. As a result, we found that an additional subnanosecond decay pathway is activated when the pump beam intensity surpasses 0.4 GW/cm{sup 2}. We attributed this intensity-dependent pathway to a TPA induced bulk defect state and our results demonstrate that this photo induced defect state has potential applications in ZnO based optoelectronic and spintronic devices.

  7. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    SciTech Connect (OSTI)

    Qian, J. C.; Jha, S. K. E-mail: apwjzh@cityu.edu.hk; Wang, B. Q.; Jelenkovi?, E. V.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.; Zhang, W. J. E-mail: apwjzh@cityu.edu.hk

    2014-11-10

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ?1.0?eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of 5?V.

  8. BASIN BLAN CO BLAN CO S OT ERO IGNAC IO-BLANCO AZ TEC BALLAR

    U.S. Energy Information Administration (EIA) Indexed Site

    Map created June 2005; projection is UTM-13, NAD-27. Authors: Sam Limerick (1), Lucy Luo (1), Gary Long (2), David Morehouse (2), Jack Perrin (1), Steve Jackson (1) and Robert King ...

  9. GAUAGHER AND GALLAGHER ATTORmYS AT LAW, P.C. Ot4ECONWRJTIONPUtA

    Office of Legacy Management (LM)

    BOSTON. MASS. 02129 March 7, 1990 (617) 241.8aoo ?AX. (617) 141*?6W VIA TELEFAX Park Owen USDOE: Nuclear Facility De commissioning and site Remedial hotion oak Ridge...

  10. BASIN BLAN CO BLAN CO S OT ERO IGNAC IO-BLANCO AZ TEC BALLAR

    U.S. Energy Information Administration (EIA) Indexed Site

    The data and methods used in their creation are detailed in a report, "Scientific Inventory of Onshore Federal Lands' Oil and Gas Resources and Reserves and the Extent and Nature ...

  11. BASIN BLAN CO BLAN CO S OT ERO IGNAC IO-BLANCO AZ TEC BALLAR

    U.S. Energy Information Administration (EIA) Indexed Site

    BOE Reserve Class No 2001 reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 - 1,000 MBOE 1,000.1- 10,000 MBOE 10,000.1 - 100,000 MBOE > 100,000 MBOE Basin Outline AZ UT NM CO 1 2 Index Map for 2 Paradox-San Juan Panels 2001 Reserve Summary for All Paradox-San Juan Basin Fields Total Total Total Number Liquid Gas BOE of Reserves Reserves Reserves Fields (Mbbl) (MMcf) (Mbbl) Paradox-San Juan 250 174,193 20,653,622 3,616,464 Basin CO NM IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC IO-BLANCO

  12. BASIN BLAN CO BLAN CO S OT ERO IGNAC IO-BLANCO AZ TEC BALLAR

    U.S. Energy Information Administration (EIA) Indexed Site

    Gas Reserve Class No 2001 gas reserves 0.1 - 10 MMCF 10.1 - 100 MMCF 100.1 - 1,000 MMCF 1,000.1- 10,000 MMCF 10,000.1 - 100,000 MMCF > 100,000 MMCF Basin Outline AZ UT NM CO 1 2 Index Map for 2 Paradox-San Juan Panels 2001 Reserve Summary for All Paradox-San Juan Basin Fields Total Total Total Number Liquid Gas BOE of Reserves Reserves Reserves Fields (Mbbl) (MMcf) (Mbbl) Paradox-San Juan 250 174,193 20,653,622 3,616,464 Basin CO NM IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC

  13. BASIN BLAN CO BLAN CO S OT ERO IGNAC IO-BLANCO AZ TEC BALLAR

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquids Reserve Class No 2001 liquids reserves 0.1 - 10 Mbbl 10.1 - 100 Mbbl 100.1 - 1,000 Mbbl 1,000.1- 10,000 Mbbl 10,000.1 - 100,000 Mbbl Basin Outline AZ UT NM CO 1 2 Index Map for 2 Paradox-San Juan Panels 2001 Reserve Summary for All Paradox-San Juan Basin Fields Total Total Total Number Liquid Gas BOE of Reserves Reserves Reserves Fields (Mbbl) (MMcf) (Mbbl) Paradox-San Juan 250 174,193 20,653,622 3,616,464 Basin CO NM IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC IO-BLANCO IGNAC

  14. Microsoft PowerPoint - Snippet 4.1 OTB OTS Implementation 20140723...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cost Reimbursement Contracts for Capital Asset Projects, Environmental Remediation, ... Typically an increase in schedule will also require an increased budget allocation. ...

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    U.S. Energy Information Administration (EIA) Indexed Site

    AZ UT NM CO 1 2 Index Map for 2 Paradox-San Juan Panels 2001 Reserve Summary for All ... UPUT (Uinta-Piceance Basin and Utah). Map created June 2005; projection is UTM-13, ...

  16. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect (OSTI)

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  17. Energy levels, oscillator strengths, and radiative rates for Si-like Zn XVII, Ga XVIII, Ge XIX, and As XX

    SciTech Connect (OSTI)

    Abou El-Maaref, A.; Allam, S.H.; El-Sherbini, Th.M.

    2014-01-15

    The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s{sup 2}3p{sup 2}, 3s3p{sup 3}, 3s{sup 2}3p3d, 3s{sup 2}3p4s, 3s{sup 2}3p4p and 3s{sup 2}3p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the BreitPauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels have also been calculated. -- Highlights: We have calculated the fine-structure energy levels of Si-like Zn, Ga, Ge and As. The calculations are performed using the configuration interaction method (CIV3). We have calculated the oscillator strengths, line strengths and transition rates. The wavelengths of the transitions are listed in this article. We also have made comparisons between our data and other calculations.

  18. Adsorption and Deactivation Characteristics of Cu/ZnO-Based Catalysts for Methanol Synthesis from Carbon Dioxide

    SciTech Connect (OSTI)

    Natesakhawat, Sittichai; Ohodnicki, Paul R., Jr.; Howard, Bret H.; Lekse, Jonathan W.; Baltrus, John P.; Matranga, Christopher

    2013-12-01

    The adsorption and deactivation characteristics of coprecipitated Cu/ZnO-based catalysts were examined and correlated to their performance in methanol synthesis from CO{sub 2} hydrogenation. The addition of Ga{sub 2}O{sub 3} and Y{sub 2}O{sub 3} promoters is shown to increase the Cu surface area and CO{sub 2}/H{sub 2} adsorption capacities of the catalysts and enhance methanol synthesis activity. Infrared studies showed that CO{sub 2} adsorbs spontaneously on these catalysts at room temperature as both monoand bi-dentate carbonate species. These weakly bound species desorb completely from the catalyst surface by 200 C while other carbonate species persist up to 500 C. Characterization using N{sub 2}O decomposition, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy (EDX) analysis clearly indicated that Cu sintering is the main cause of catalyst deactivation. Ga and Y promotion improves the catalyst stability by suppressing the agglomeration of Cu and ZnO particles under pretreatment and reaction conditions.

  19. Fine precipitation scenarios of AlZnMg(Cu) alloys revealed by advanced atomic-resolution electron microscopy study Part II: Fine precipitation scenarios in AlZnMg(Cu) alloys

    SciTech Connect (OSTI)

    Liu, J.Z.; Chen, J.H.; Liu, Z.R.; Wu, C.L.

    2015-01-15

    Although they are among the most important precipitation-hardened materials for industry applications, the high-strength AlZnMg(Cu) alloys have thus far not yet been understood adequately about their underlying precipitation scenarios in relation with the properties. This is partly due to the fact that the structures of a number of different precipitates involved in the alloys are unknown, and partly due to the complexity that the precipitation behaviors of the alloys may be closely related to the alloy's composition. In Part I of the present study, we have determined all the unknown precipitate structures in the alloys. Here in Part II, using atomic-resolution electron microscopy in association with the first principles energy calculations, we further studied and correlated the phase/structure transformation/evolution among these hardening precipitates in relation with the alloy's composition. It is shown that there are actually two coexisting classes of hardening precipitates in these alloys: the first class includes the η′-precipitates and their early-stage Guinier–Preston (GP-η′) zones; the second class includes the precursors of the equilibrium η-phase (referred to η{sub p}, or η-precursor) and their early-stage Guinier–Preston (GP-η{sub p}) zones. The two coexisting classes of precipitates correspond to two precipitation scenarios. - Highlights: • We determine and verify all the key precipitate structures in AlMgZn(Cu) alloys. • We employ aberration-corrected scanning transmission electron microscopy (STEM). • We use aberration-corrected high-resolution TEM (HRTEM) for the investigations. • We obtain atomic-resolution images of the precipitates and model their structures. • We refine all precipitate structures with quantitative image simulation analysis. • The hardening precipitates in AlZnMg alloys shall be classified into two groups. • Two precipitation scenarios coexist in the alloys. • The precipitation behavior of such an alloy depends on the alloy's composition. • Very detailed phase/structure transformations among the precipitates are revealed.

  20. The effects of hydrothermal temperature on the photocatalytic performance of ZnIn{sub 2}S{sub 4} for hydrogen generation under visible light irradiation

    SciTech Connect (OSTI)

    Tian, Fei; Zhu, Rongshu; Song, Kelin; Niu, Minli; Ouyang, Feng; Cao, Gang

    2015-10-15

    Highlights: • The ZnIn{sub 2}S{sub 4} (120, 140, 160, 180, and 200 °C) was prepared. • The activities splitting water to hydrogen under visible light were evaluated. • The activity achieved the best when hydrothermal temperature was 160 °C. • The activity order is related to the surface morphology and surface defects. - Abstract: A series of ZnIn{sub 2}S{sub 4} photocatalysts were successfully synthesized using the hydrothermal method with different hydrothermal temperatures (120, 140, 160, 180, and 200 °C) and characterized by various analysis techniques, such as UV–vis, XRD, SEM, BET and PL. The results indicated that these photocatalysts had a similar band gap. The hydrothermal temperature had a huge influence on the properties of the photocatalysts such as the BET surface area, the total pore volume, the average pore diameter, the defects and the morphology. The photocatalytic activities of ZnIn{sub 2}S{sub 4} were evaluated based on photocatalytic hydrogen production from water under visible-light irradiation. The activity order is attributed to the coefficient of the surface morphology and the surface defects. The hydrogen production efficiency achieved the best when the hydrothermal temperature was 160 °C. On the basis of the characterization of the catalysts, the effects of the hydrothermal temperature on the photocatalytic activity of ZnIn{sub 2}S{sub 4} were discussed.

  1. Facile synthesis and characterization of ZnFe{sub 2}O{sub 4}/{alpha}-Fe{sub 2}O{sub 3} composite hollow nanospheres

    SciTech Connect (OSTI)

    Shen, Yu [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China) [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China); School of Environmental and Chemical Engineering, Dalian Jiaotong University, Dalian 116028 (China); Li, Xinyong, E-mail: xyli@dlut.edu.cn [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China) [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China); Department of Chemical Engineering, Curtin University, Perth, WA 6845 (Australia); Zhao, Qidong; Hou, Yang [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China)] [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024 (China); Tade, Moses [Department of Chemical Engineering, Curtin University, Perth, WA 6845 (Australia)] [Department of Chemical Engineering, Curtin University, Perth, WA 6845 (Australia); Liu, Shaomin, E-mail: Shaomin.Liu@curtin.edu.au [Department of Chemical Engineering, Curtin University, Perth, WA 6845 (Australia)] [Department of Chemical Engineering, Curtin University, Perth, WA 6845 (Australia)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer ZnFe{sub 2}O{sub 4}/{alpha}-Fe{sub 2}O{sub 3} composite hollow nanospheres were successfully synthesized via a facile method. Black-Right-Pointing-Pointer Detailed structural, morphology and the phase composition were studied. Black-Right-Pointing-Pointer The incorporation of ZnFe{sub 2}O{sub 4} and {alpha}-Fe{sub 2}O{sub 3} gives an appropriate band gap value to utilize solar energy. -- Abstract: ZnFe{sub 2}O{sub 4}/{alpha}-Fe{sub 2}O{sub 3} composite hollow nanospheres were successfully fabricated via a facile one-pot solvothermal method, utilizing polyethylene glycol as soft template. X-ray diffraction and scanning electron microscopy analysis revealed that the prepared nanospheres with cubic spinel and rhombohedra composite structure had a uniform diameter of about 370 nm, and the hollow structure could be further confirmed by transmission electron microscopy. Energy dispersive X-ray, X-ray photoelectron spectroscopy and Fourier transform infrared techniques were also applied to characterize the elemental composition and chemical bonds in the hollow nanospheres. The ZnFe{sub 2}O{sub 4}/{alpha}-Fe{sub 2}O{sub 3} composite hollow nanospheres show attractive light absorption property for potential applications in electronics, optics, and catalysis.

  2. Production of ?Cu by the natZn(p,?) reaction: Improved separation and specific activity determination by titration with three chelators

    SciTech Connect (OSTI)

    Asad, Ali H.; Smith, Suzanne V.; Morandeau, Laurence M.; Chan, Sun; Jeffery, Charmaine M.; Price, Roger I.

    2015-09-01

    In this study, the cyclotron-based production of position-emitting ?Cu using the (p,?) reaction at 11.7 MeV was investigated starting from natural-zinc (natZn) and enriched ??Zn-foil targets, as well as its subsequent purification. For natZn, a combination of three resins were assessed to separate ?Cu from contaminating 66,67,68Ga and natZn. The specific activity of the purified ?Cu determined using ICP-MS analysis ranged from 143.314.3(SD) to 506.250.6 MBq/?g while the titration method using p-SCN-Bn-DOTA, p-SCN-Bn-NOTA and diamsar gave variable results (4.70.2 to 412.515.3 MBq/?g), with diamsar lying closest to the ICP-MS values. Results suggest that the p-SCN-Bn-DOTA and p-SCN-Bn-NOTA titration methods are significantly affected by the presence of trace-metal contaminants.

  3. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  4. Effect of Zn doping on the magneto-caloric effect and critical constants of Mott insulator MnV{sub 2}O{sub 4}

    SciTech Connect (OSTI)

    Shahi, Prashant; Kumar, A.; Shukla, K. K.; Chatterjee, Sandip; Singh, Harishchandra; Ghosh, A. K.; Yadav, A. K.; Nigam, A. K.

    2014-09-15

    X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV{sub 2}O{sub 4} have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents ?, ? and ? do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn{sub 0.95}Zn{sub 0.05}V{sub 2}O{sub 4} is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

  5. Production of ⁶¹Cu by the natZn(p,α) reaction: Improved separation and specific activity determination by titration with three chelators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Asad, Ali H.; Smith, Suzanne V.; Morandeau, Laurence M.; Chan, Sun; Jeffery, Charmaine M.; Price, Roger I.

    2015-09-01

    In this study, the cyclotron-based production of position-emitting ⁶¹Cu using the (p,α) reaction at 11.7 MeV was investigated starting from natural-zinc (natZn) and enriched ⁶⁴Zn-foil targets, as well as its subsequent purification. For natZn, a combination of three resins were assessed to separate ⁶¹Cu from contaminating 66,67,68Ga and natZn. The specific activity of the purified ⁶¹Cu determined using ICP-MS analysis ranged from 143.3±14.3(SD) to 506.2±50.6 MBq/μg while the titration method using p-SCN-Bn-DOTA, p-SCN-Bn-NOTA and diamsar gave variable results (4.7±0.2 to 412.5±15.3 MBq/μg), with diamsar lying closest to the ICP-MS values. Results suggest that the p-SCN-Bn-DOTA and p-SCN-Bn-NOTA titration methods aremore » significantly affected by the presence of trace-metal contaminants.« less

  6. Design of Semiconducting Tetrahedral Mn1-xZnxO Alloys and Their Application to Solar Water Splitting

    SciTech Connect (OSTI)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, A.; Lany, Stephen

    2015-05-18

    Both structure-property and composition-structure relationships are exploited to design and realize novel wurtzite-structure Mn1-xZnxO alloys. A proof of principle is provided that corroborates, in particular, the predicted favorable hole-transport properties of these alloys.

  7. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM for the HBr-based solution, the latter showed a smaller variation in performance of 0.39% FWHM over 7 days compared with 0.69% for the BME-based solution.« less

  8. Energy and charge transfers between (Bu{sub 4}N){sub 2}(Ru)(dcbpyH){sub 2}(NCS){sub 2} (N719) and ZnO thin films

    SciTech Connect (OSTI)

    Ni Manman; Cheng Qiang; Zhang, W. F.

    2010-03-15

    ZnO thin films and (Bu{sub 4}N){sub 2}(Ru)(dcbpyH){sub 2}(NCS){sub 2} (called N719) sensitized ZnO thin films are grown on fluorine-doped tin oxide (FTO) conducting glass substrates using laser molecular beam epitaxy. Ultraviolet-visible absorption, photoluminescence (PL), surface photovoltage spectroscopy, and Raman scattering are employed to probe into the transition process of photogenerated charges and the interaction between ZnO and N719. The experimental results indicate that there is a significant electronic interaction between N719 and ZnO through chemiadsorption. The interaction greatly enhances the photogenerated charge separation and thus the photovoltaic response of the ZnO film but remarkedly weakens its radiative recombination, i.e., PL, implying strong energy and charge transfer occurring between N719 and ZnO. In addition, a new PL peak observed at about 720 nm in N719 sensitized ZnO/FTO is attributed to the electron-hole recombination of N719.

  9. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect (OSTI)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  10. Effect of Zn doping on structural, magnetic and dielectric properties of LaFeO{sub 3} synthesized through sol–gel auto-combustion process

    SciTech Connect (OSTI)

    Bhat, Irshad; Husain, Shahid; Khan, Wasi; Patil, S.I.

    2013-11-15

    Graphical abstract: - Highlights: • We have synthesized the samples of LaFe{sub 1−x}Zn{sub x}O{sub 3} (0 ≤ x ≤ 0.3) using sol–gel auto-combustion process. • The doping of Zn{sup 2+} hugely enhances the dielectric constant (ε′) and it shows a colossal value. • The parent compound LaFeO{sub 3} does not show any relaxation peak, but the substitution of Zn at Fe{sup 3+} site brings the relaxation in the system. • The system shows a peak behavior thereby giving the Debye like dipolar relaxation response. - Abstract: We have studied the structural and dielectric properties of nano-crystalline LaFe{sub 1−x}Zn{sub x}O{sub 3} (0 ≤ x ≤ 0.3) pervoskite samples synthesized through sol–gel auto-combustion technique. X-ray diffraction and FTIR spectroscopy are used to confirm the single phase characteristics. Microstructural features are investigated using scanning electron microscope and compositional analysis is performed through energy dispersive spectroscopy. The average grain sizes, calculated from the Scherrer formula, lie in the range below 30 nm. The hysteresis (M-H) curves display a weak magnetic order and a shift in the hysteresis loops. Dielectric response has been discussed, in the framework of “universal dielectric response” model. The value of dielectric constant (ε′) increases drastically on Zn doping. The dielectric loss factor (ε″) shows Debye like dipolar relaxation behavior. The observed peaks in loss factor (ε″) are attributed to the fact that a strong correlation between the conduction mechanism and the dielectric behavior exists in ferrites.

  11. Luminescent pillared Ln{sup III}Zn{sup II} heterometallic coordination frameworks with two kinds of N-heterocyclic carboxylate ligands

    SciTech Connect (OSTI)

    Liu, Sui-Jun; Jia, Ji-Min; Cui, Yu; Han, Song-De; Chang, Ze

    2014-04-01

    In our efforts toward rational design and systematic synthesis of pillar-layer structure coordination frameworks, four new Ln{sup III}Zn{sup II} heterometallic coordination polymers (CPs) based on two kinds of N-heterocyclic carboxylic ligands with formula ([LnZn(L1){sub 2}(L2)(H{sub 2}O){sub m}]nH{sub 2}O){sub ?} (Ln=La (1), Eu (2), Gd (3) and Dy (4), m=3 (for 1) and 2 (for 24), n=8 (for 1) and 7 (for 24), H{sub 2}L1=pyridine-2,3-dicarboxylate acid, HL2=isonicotinic acid), have been synthesized under hydrothermal reaction of Ln{sub 2}O{sub 3}, ZnO, H{sub 2}L1 and HL2. CP 1 has a three-dimensional (3D) structure with a (3,6)-connected sit topology network, while CPs 24 are isostructural with 3D single-node pcu alpha-Po topology network. Also, luminescent properties of these CPs have also been investigated. The emission of 1 and 3 should be attributed to the coordination-perturbed ligand-centered luminescence and the emission spectra of 2 and 4 show the characteristic bands of the corresponding Ln{sup III} ions. - Graphical abstract: Four new 3D Ln{sup III}Zn{sup II} coordination frameworks with pillar-layer sit or pcu alpha-Po topology have been successfully obtained. Moreover, the photoluminescent properties of compounds 14 have also been investigated. - Highlights: Four new Ln{sup III}Zn{sup II} heterometallic coordination frameworks with two types of topologies have been synthesized. Metal oxides and two kinds of N-heterocyclic carboxylate ligands were used for the construction of targeted coordination polymers. The luminescent properties of the coordination polymers are investigated.

  12. Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection

    SciTech Connect (OSTI)

    Prestgard, Megan C.; Tiwari, Ashutosh

    2014-03-24

    The inverse spin Hall effect (ISHE) is a newly discovered, quantum mechanical phenomenon where an applied spin current results in the generation of an electrical voltage in the transverse direction. It is anticipated that the ISHE can provide a more simple way of measuring spin currents in spintronic devices. The ISHE was first observed in noble metals that exhibit strong spin-orbit coupling. However, recently, the ISHE has been detected in conventional semiconductors (such as Si and Ge), which possess weak spin-orbit coupling. This suggests that large-spin orbit coupling is not a requirement for observing the ISHE. In this paper, we are reporting the observation of the ISHE in an alternative semiconductor material, zinc oxide (ZnO) using all-electrical means. In our study, we found that when a spin-polarized current is injected into the ZnO film from a NiFe ferromagnetic injector via an MgO tunnel barrier layer, a voltage transverse to both the direction of the current as well as its spin-polarization is generated in the ZnO layer. The polarity of this voltage signal was found to flip on reversing the direction of the injected current as well as on reversing the polarization of the current, consistent with the predictions of the ISHE process. Through careful analysis of the ISHE data, we determined a spin-Hall angle of approximately 1.651 × 10{sup −2} for ZnO, which is two orders of magnitude higher than that of silicon. Observation of a detectable room-temperature ISHE signal in ZnO via electrical injection and detection is a groundbreaking step that opens a path towards achieving transparent spin detectors for next-generation spintronic device technology.

  13. Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

    SciTech Connect (OSTI)

    Sakr, G.B.; Fouad, S.S.; Yahia, I.S.; Abdel Basset, D.M.; Yakuphanoglu, F.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ? XRD and AFM graphs support the nano-crystalline of the studied device. ? Dark currentvoltage characteristics of the heterojunction diode were investigated. ? Electrical parameters and conduction mechanism were determined. ? Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark currentvoltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (?10 V to 10 V) at temperature interval (303423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height ?{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

  14. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  15. Electronic and thermoelectric analysis of phases in the In2O3(ZnO)k system

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hopper, E. Mitchell; Zhu, Qimin; Song, Jung-Hwan; Peng, Haowei; Freeman, Arthur J.; Mason, Thomas O.

    2011-01-01

    The high-temperature electrical conductivity and thermopower of several compounds in the In2O3(ZnO)k system (k = 3, 5, 7, and 9) were measured, and the band structures of the k = 1, 2, and 3 structures were predicted based on first-principles calculations. These phases exhibit highly dispersed conduction bands consistent with transparent conducting oxide behavior. Jonker plots (Seebeck coefficient vs. natural logarithm of conductivity) were used to obtain the product of the density of states and mobility for these phases, which were related to the maximum achievable power factor (thermopower squared times conductivity) for each phase by Ioffe analysis (maximum powermore » factor vs. Jonker plot intercept). With the exception of the k = 9 phase, all other phases were found to have maximum predicted power factors comparable to other thermoelectric oxides if suitably doped.« less

  16. Influence of baking method and baking temperature on the optical properties of ZnO thin films

    SciTech Connect (OSTI)

    Ng, Zi-Neng; Chan, Kah-Yoong

    2015-04-24

    In this work, sol-gel spin coating technique was utilised to coat ZnO thin films on glass substrates. During the intermediate 3 minutes baking process, either hotplate or convection oven was employed to bake the samples. The temperature for the baking process was varied from 150°C to 300°C for both instruments. Avantes Optical Spectrophotometer was used to characterise the optical property. The optical transmittances of hotplate-baked and oven-baked samples showed different trends with increasing baking temperatures, ranging from below 50% transmittance to over 90% transmittance in the visible range of wavelength. The difference in baking mechanisms using hotplate and convection oven will be discussed in this paper.

  17. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect (OSTI)

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  18. Temperature dependent DC electrical conductivity studies of ZnO nanoparticle thick films prepared by simple solution combustion method

    SciTech Connect (OSTI)

    Naveen, C. S. Jayanna, H. S. Lamani, Ashok R. Rajeeva, M. P.

    2014-04-24

    ZnO nanoparticles of different size were prepared by varying the molar ratio of glycine and zinc nitrate hexahydrate as fuel and oxidizer (F/O = 0.8, 1.11, 1.7) by simple solution combustion method. Powder samples were characterized by UV-Visible spectrophotometer, X-ray diffractometer, Scanning electron microscope (SEM). DC electrical conductivity measurements at room temperature and in the temperature range of 313-673K were carried out for the prepared thick films and it was found to increase with increase of temperature which confirms the semiconducting nature of the samples. Activation energies were calculated and it was found that, F/O molar ratio 1.7 has low E{sub AL} (Low temperature activation energy) and high E{sub AH} (High temperature activation energy) compared to other samples.

  19. Bio-compatibility, surface and chemical characterization of glow discharge plasma modified ZnO nanocomposite polycarbonate

    SciTech Connect (OSTI)

    Bagra, Bhawna, E-mail: bhawnacct@gmail.com; Pimpliskar, Prashant, E-mail: bhawnacct@gmail.com [Centre for Converging Technologies, University of Rajasthan, Jaipur-302004 (India); Agrawal, Narendra Kumar [Department of Physics, Malaviya National Institute of Technology, Jaipur-302004 (India)

    2014-04-24

    Bio compatibility is an important issue for synthesis of biomedical devices, which can be tested by bioadoptability and creations of active site to enhance the bacterial/cell growth in biomedical devices. Hence a systematic study was carried out to characterize the effects of Nitrogen ion plasma for creations of active site in nano composite polymer membrane. Nano particles of ZnO are synthesized by chemical root, using solution casting nano composite polymeric membranes were prepared and treated with Nitrogen ion plasma. These membranes were characterized by different technique such as optical microscopy, SEM- Scanning electron microscope, optical transmittance, Fourier transform infrared spectroscopy. Then biocompatibility for membranes was tested by testing of bio-adoptability of membrane.

  20. Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors

    SciTech Connect (OSTI)

    Bolotnikov, A. E. Camarda, G. S.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Marshall, M.; Roy, U.; Vernon, E.; Yang, G.; James, R. B.; Lee, K.; Petryk, M.

    2014-06-30

    CdZnTe (CZT) is a promising medium for room-temperature gamma-ray detectors. However, the low production yield of acceptable quality crystals hampers the use of CZT detectors for gamma-ray spectroscopy. Significant efforts have been directed towards improving quality of CZT crystals to make them generally available for radiation detectors. Another way to address this problem is to implement detector designs that would allow for more accurate and predictable correction of the charge loss associated with crystal defects. In this work, we demonstrate that high-granularity position-sensitive detectors can significantly improve the performance of CZT detectors fabricated from CZT crystals with wider acceptance boundaries, leading to an increase of their availability and expected decrease in cost.

  1. In Situ Photoelectron Emission Microscopy of a Thermally Induced Martensitic Transformation in a CuZnAI Shape Memory Alloy

    SciTech Connect (OSTI)

    Xiong, Gang; Joly, Alan G.; Beck, Kenneth M.; Hess, Wayne P.; Cai, Mingdong; Langford, Stephen C.; Dickinson, J T.

    2006-02-27

    Photoemission electron microscopy, in conjunction with photoemission spectroscopy, reflectivity, and surface roughness measurements, is used to study the thermally-induced martensitic transformation in a CuZnAI shape memory alloy. Real-time phase transformation is observed as a nearly instantaneous change of photoelectron intensity, accompanied by microstructural deformation and displacement due to the shape memory effect. The difference in the photoelectron intensity before and after the phase transformation is attributed to the concomitant change of work function as measured by photoelectron spectroscopy. Photoemission electron microscopy is shown to be a valuable new technique facilitating the study of phase transformations in shape memory alloys, and provides real-time information on microstructural changes and phase-dependent electronic properties.

  2. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

    SciTech Connect (OSTI)

    Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramn; Sitar, Zlatko; Maria, Jon-Paul

    2014-01-28

    We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

  3. Photocatalytic H{sub 2} production from spinels ZnGa{sub 2−x}Cr{sub x}O{sub 4} (0≤x≤2) solid solutions

    SciTech Connect (OSTI)

    Xu, Xiaoxiang; Xie, Yinghao; Ni, Shuang; Azad, Abul K.; Cao, Tongcheng

    2015-10-15

    Solid solutions of ZnGa{sub 2−x}Cr{sub x}O{sub 4} (0≤x≤2) were successfully prepared by solid state reactions. Introducing Cr into ZnGa{sub 2}O{sub 4} crystal structure significantly improves its light absorption and greatly enhances its photocatalytic activity. An optimized Cr content (x=1.5 for ZnGa{sub 0.5}Cr{sub 1.5}O{sub 4}) was found for the solid solutions with the highest photocatalytic hydrogen production rate (~775 μmol/h). Compositional analysis suggests there is a strong enrichment of Cr at the surface of sample ZnGa{sub 0.5}Cr{sub 1.5}O{sub 4} compared with other samples. Theoretical calculations suggest their electronic structures involve spin-polarized conduction band (CB) and valence band (VB) that are mainly composed of Cr 3d orbitals. The highest photocatalytic activity observed in ZnGa{sub 0.5}Cr{sub 1.5}O{sub 4} is probably due to the higher Cr content at the surface that favors the Cr 3d orbital overlapping. - Graphical abstract: Electronic structure and density of states of ZnGa{sub 2}O{sub 4} after partially substituting Ga with Cr. - Highlights: • Complete solid solution can be formed between ZnGa{sub 2}O{sub 4} and ZnCr{sub 2}O{sub 4}. • Optical properties and catalytic activity are improved by adding Cr into ZnGa{sub 2}O{sub 4}. • An optimized Cr content exists for the highest activity. • Enrichment of Cr in the surface is beneficial for a better performance.

  4. Equal Channel Angular Pressing (ECAP) and Its Application to Grain Refinement of Al-Zn-Mg-Cu Alloy

    SciTech Connect (OSTI)

    Tekeli, Sueleyman; Gueral, Ahmet

    2011-12-10

    Microstructure of a metal can be considerably changed by severe plastic deformation techniques such as high pressure torsion, extrusion and equal-channel angular pressing (ECAP). Among these methods, ECAP is particularly attractive because it has a potential for introducing significant grain refinement and homogeneous microstructure into bulk materials. Typically, it reduces the grain size to the submicrometer level or even nanometer range and thus produces materials that are capable of exhibiting unusual mechanical properties. In the present study, a test unites for equal channel angular pressing was constructed and this system was used for Al-Zn-Mg-Cu alloy. After the optimization tests, it was seen that the most effective lubricant for the dies was MoS{sub 2}, the pressing pressure was around 25-35 ton and the pressing speed was 2 mm/s. By using these parameters, the Al-Zn-Mg-Cu alloy was successfully ECAPed up to 14 passes at 200 deg. C using route C. After ECAP tests, the specimens were characterized by transmission electron microscope (TEM), hardness and macrostructural investigations. It was seen that the plastic deformation in the ECAPed specimens occurred from edge to the centre like whirlpool. In addition, the deformation intensity increased with increasing pass number. The grain size of the specimens effectively also decreased with increasing pass number. That is, while the grain size of unECAPed specimen was 10 {mu}m, this value decreased to 300 nm after 14 passes. At the beginning, while there was a banding tendency in the grains toward deformation direction, homogeneous and equiaxed grains were formed with increasing pass number. This grain refinement was as a result of an interaction between shear strain and thermal recovery during ECAP processing. Hardness measurements showed that the hardness values increased up to 4 passes, decreased effectively at 6th pass, again increased at 8th pass and after this pass, the hardness again decreased due to dynamic recrystallization.

  5. Syngas Conversion to Gasoline-Range Hydrocarbons over Pd/ZnO/Al2O3 and ZSM-5 Composite Catalyst System

    SciTech Connect (OSTI)

    Dagle, Robert A.; Lizarazo Adarme, Jair A.; Lebarbier, Vanessa MC; Gray, Michel J.; White, James F.; King, David L.; Palo, Daniel R.

    2014-07-01

    A composite Pd/ZnO/Al2O3-HZSM-5 (Si/Al=40) catalytic system was evaluated for the synthesis of gasoline-range hydrocarbons directly from synthesis gas. Bifunctional catalyst comprising PdZn metal and acid sites present the required catalytically active sites necessary for the methanol synthesis, methanol dehydration, and methanol-to-gasoline reactions. This system provides a unique catalytic pathway for the production of liquid hydrocarbons directly from syngas. However, selectivity control is difficult and poses many challenges. The composite catalytic system was evaluated under various process conditions. Investigated were the effects of temperature (310-375oC), pressure (300-1000 psig), time-on-stream (50 hrs), and gas-hour space velocity (740-2970 hr-1), using a H2/CO molar syngas ratio of 2.0. By operating at the lower end of the temperature range investigated, liquid hydrocarbon formation was favored, as was decreased amounts of undesirable light hydrocarbons. However, lower operating temperatures also facilitated undesirable CO2 formation via the water-gas shift reaction. Higher operating pressures slightly favored liquid synthesis. Operating at relatively low pressures (e.g. 300 psig) was made possible, whereas for methanol synthesis alone higher pressure are usually required to achieve similar conversion levels (e.g. 1000 psig). Thermodynamic constraints on methanol synthesis are eased by pushing the equilibrium through hydrocarbon formation. Catalytic performance was also evaluated by altering Pd and Zn composition of the Pd/ZnO/Al2O3 catalyst. Of the catalysts and conditions tested, selectivity toward liquid hydrocarbon was highest when using a 5% Pd metal loading and Pd/Zn molar ratio of 0.25 and mixed with HZMS-5, operating at 310oC and 300 psig, CO conversion was 43 % and selectivity (carbon weight basis) to hydrocarbons was 49 wt. %. Of the hydrocarbon fraction, 44wt. % was in the C5-C12 liquid product range and consisted primarily of aromatic polymethylbenzenes. However, as syngas conversion increases with increasing temperature, selectivity to liquid product diminished. This is attributed, in large part, to increased saturation of the olefinic intermediates over PdZn metal sites. Under all the conditions and catalysts evaluated in this study, generating liquid product in high yield was challenging (<10 wt. % C5+ yield).

  6. A highly coercive carbon nanotube coated with Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals synthesized by chemical precipitation-hydrothermal process

    SciTech Connect (OSTI)

    Cao Huiqun; Zhu Meifang Li Yaogang; Liu Jianhong; Ni Zhuo; Qin Zongyi

    2007-11-15

    Novel magnetic composites (Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}-MWCNTs) of multi-walled carbon nanotubes (MWCNTs) coated with Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals were synthesized by chemical precipitation-hydrothermal process. The composites were characterized by X-ray powder diffractometer (XRD), X-ray photoelectron spectrometer (XPS), Fourier transform infrared spectroscopy (FTIR), Moessbauer spectroscopy (MS), transmission electron microscopy (TEM), and selected area electron diffraction (SAED), etc. A temperature of about 200 deg. C was identified to be an appropriate hydrothermal condition to obtain Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}-MWCNTs, being lower than the synthesis temperature of a single-phase Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals. The sizes of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} in the composites were smaller than those of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals in single phase. The composites exhibited more superparamagnetic than Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals in their relaxation behaviors. The magnetic properties measured by a vibrating sample magnetometer showed that the composites had a high coercive field of 386.0 Oe at room temperature, higher than those of MWCNT and Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals. - Graphical abstract: Novel magnetic composites (Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}-MWCNTs) of multi-walled carbon nanotubes (MWCNTs) coated with Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals were synthesized by chemical precipitation-hydrothermal process. The composites had a high coercive field of 386.0 Oe, higher than those of MWCNT and Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanocrystals.

  7. Synthesis, structure, and physical properties of [Sm(C{sub 6}NO{sub 2}H{sub 5}){sub 3}(H{sub 2}O){sub 2}]{sub 2n}.(H{sub 5}O{sub 2}){sub n}(ZnCl{sub 5}){sub n}(ZnCl{sub 4}){sub 2n}.(H{sub 2}O){sub 2n} with unprecedented ZnCl{sub 5}{sup 3-} species

    SciTech Connect (OSTI)

    Xie Yiming Chen Wentong; Wu Jihuai

    2008-08-15

    A novel bimetallic 4f-3d metal-isonicotinic acid inorganic-organic hybrid complex [Sm(C{sub 6}NO{sub 2}H{sub 5}){sub 3}(H{sub 2}O){sub 2}]{sub 2n}.(H{sub 5}O{sub 2}){sub n}(ZnCl{sub 5}){sub n}(ZnCl{sub 4}){sub 2n}.(H{sub 2}O){sub 2n} (1) has been synthesized via hydrothermal reaction and structurally characterized by single-crystal X-ray diffraction. Complex 1 is characteristic of a one-dimensional polycationic chain-like structure and unprecedented ZnCl{sub 5}{sup 3-} species. Photoluminescent investigation reveals that the title complex displays interesting emissions in a wide region. Optical absorption spectra of 1 reveal the presence of an optical gap of 3.59 eV. - Graphical abstract: A novel bimetallic 4f-3d metal-isonicotinic acid inorganic-organic hybrid complex was synthesized. It is characteristic of a one-dimensional polycationic chain-like structure. Photoluminescent investigation reveals that the title complex displays interesting emissions in a wide region. Optical absorption spectra of 1 reveal the presence of a wide optical bandgap.

  8. Half-metallic ferromagnetism in Fe-doped Zn{sub 3}P{sub 2} from first-principles calculations

    SciTech Connect (OSTI)

    Jaiganesh, G. Jaya, S. Mathi

    2014-04-24

    Using the first-principles calculations based on the density functional theory, we have studied the magnetism and electronic structure of Fe-doped Zinc Phosphide (Zn{sub 3}P{sub 2}). Our results show that the half-metallic ground state and ferromagnetic stability for the small Fe concentrations considered in our study. The stability of the doped material has been studied by calculating the heat of formation and analyzing the minimum total energies in nonmagnetic and ferromagnetic phases. A large value of the magnetic moment is obtained from our calculations and our calculation suggests that the Fe-doped Zn{sub 3}P{sub 2} may be a useful material in semiconductor spintronics.

  9. Effect of large additions of Cd, Pb, Cr, Zn, to cement raw meal on the composition and the properties of the clinker and the cement

    SciTech Connect (OSTI)

    Murat, M.; Sorrentino, F.

    1996-03-01

    The utilization of hydraulic binders to solidify and to stabilize industrial wastes and municipal garbage is presently recognized as one of the solutions to the problem of environment protection. Te addition of important quantities of Cd, Pb, Cr, Zn to raw meals of Portland and calcium aluminate cement modifies the mineralogical composition and the properties of the final cement. Portland cement can absorb a large amount of Cd and Zn. This absorption leads to an increase of setting time and a decrease of strengths of the cement. It also can trap chromium with a short setting time and high strengths. Calcium aluminate cements easily trap Cd and Cr with a delayed setting and good strength but also Pb with normal setting time and strengths. Large quantities of zinc oxide have a deleterious effect on calcium aluminate strengths.

  10. In-situ activation of CuO/ZnO/Al.sub.2 O.sub.3 catalysts in the liquid phase

    DOE Patents [OSTI]

    Brown, Dennis M.; Hsiung, Thomas H.; Rao, Pradip; Roberts, George W.

    1989-01-01

    The present invention relates to a method of activation of a CuO/ZnO/Al.sub.2 O.sub.3 catalyst slurried in a chemically inert liquid. Successful activation of the catalyst requires the use of a process in which the temperature of the system at any time is not allowed to exceed a certain critical value, which is a function of the specific hydrogen uptake of the catalyst at that same time. This process is especially critical for activating highly concentrated catalyst slurries, typically 25 to 50 wt %. Activation of slurries of CuO/ZnO/Al.sub.2 O.sub.3 catalyst is useful in carrying out the liquid phase methanol or the liquid phase shift reactions.

  11. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  12. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect (OSTI)

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  13. Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure

    SciTech Connect (OSTI)

    Gao, G. Y. Yao, K. L.

    2014-11-03

    Recently, ferromagnetic zinc-blende Mn{sub 1−x}Cr{sub x}S thin films (above x = 0.5) were fabricated experimentally on ZnSe substrate, which confirmed the previous theoretical prediction of half-metallic ferromagnetism in zinc-blende CrS. Here, we theoretically reveal that both Cr- and S-terminated (001) surfaces of the CrS thin films retain the half-metallicity. The CrS/ZnSe(001) heterogeneous junction exhibits excellent spin filtering and spin diode effects, which are explained by the calculated band structure and transmission spectra. The perfect spin transport properties indicate the potential applications of half-metallic CrS in spintronic devices. All computational results are obtained by using the density functional theory combined with nonequilibrium Green's function.

  14. Suppression of the Superconducting Condensate in the High-{ital T}{sub {ital c}} Cuprates by Zn Substitution and Overdoping: Evidence for an Unconventional Pairing State

    SciTech Connect (OSTI)

    Bernhard, C.; Tallon, J.L.; Bucci, C.; De Renzi, R.; Guidi, G.; Williams, G.V.; Niedermayer, C.

    1996-09-01

    By muon spin rotation we studied the depression in condensate density, {ital n}{sub {ital s}} by Zn substitution in underdoped, optimal-doped, and overdoped Y{sub 0.8}Ca{sub 0.2}Ba{sub 2}(Cu{sub 1{minus}{ital y}}Zn{sub {ital y}}){sub 3}O{sub 7{minus}{delta}}. The rapid initial decrease of {ital n}{sub {ital s}} is inconsistent with {ital s}-wave pairing and magnetic scattering but points towards a {ital d}-wave pairing state with nonmagnetic scattering in the unitarity limit irrespective of the doping state. A similar conclusion is inferred from the depression of {ital T}{sub {ital c}} and {ital n}{sub {ital s}} with overdoping in the pure compounds where pair breaking appears to be associated with increasing three dimensionality. {copyright} {ital 1996 The American Physical Society.}

  15. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  16. Synthesis and characterization of hydrotalcites: [Zn{sub 1{minus}x}Al{sub x}(OH){sub 2}](CO{sub 3}){sub x/2{center_dot}}mH{sub 2}O; x = 0.25--0.66

    SciTech Connect (OSTI)

    Valenzuela, M.A.; Lopez-Salinas, E.; Zapata, B.; Montoya, J.A.

    1997-12-31

    In this work a series of [Zn{sub 1{minus}x}Al{sub x}(OH){sub 2}](CO{sub 3}){sub x/2{center_dot}}mH{sub 2}O; x = 0.25--0.66 were prepared at constant pH in order to study the effect of the thermal treatment on their crystalline structure. It was found that it is possible to obtain pure Zn-Al hydrotalcite materials within a x = 0.25--0.50 range in comparison with Mg-Al hydrotalcites which yield pure phases in more restricted x ranges (0.25--0.33). All Zn-Al hydrotalcites lost their layered structure at temperatures above 473 K being less stable than their parental Mg-Al hydrotalcite (623 K). Specific surface areas of these materials depended strongly on the Zn/Al ratio and calcination temperature, ranging from 280 to 20 m{sup 2}/g. ZnO and ZnAl{sub 2}O{sub 4} compounds were detected as the calcination products at temperatures higher than 873 K.

  17. In situ capping for size control of monochalcogenides (ZnS, CdS, and SnS) nanocrystals produced by anaerobic metal-reducing bacteria

    SciTech Connect (OSTI)

    Jang, Gyoung Gug; Jacobs, Christopher B; Ivanov, Ilia N; Joshi, Pooran C; Meyer III, Harry M; Kidder, Michelle; Armstrong, Beth L; Datskos, Panos G; Graham, David E; Moon, Ji Won

    2015-01-01

    Metal monochalcogenide quantum dot nanocrystals of ZnS, CdS and SnS were prepared by anaerobic, metal-reducing bacteria using in situ capping by oleic acid or oleylamine. The capping agent preferentially adsorbs on the surface of the nanocrystal, suppressing the growth process in the early stages, thus leading to production of nanocrystals with a diameter of less than 5 nm.

  18. Zn2+ and Sr2+ Adsorption at the TiO2 (110)-Electrolyte Interface: Influence of Ionic Strength, Coverage, and Anions

    SciTech Connect (OSTI)

    Zhang,Z.; Fenter, P.; Cheng, L.; Sturchio, N.; Bedzyk, M.; Machesky, M.; Anovitz, L.; Wesolowski, D.

    2006-01-01

    The X-ray standing wave technique was used to probe the sensitivity of Zn{sup 2+} and Sr{sup 2+} ion adsorption to changes in both the adsorbed ion coverage and the background electrolyte species and concentrations at the rutile ({alpha}-TiO{sub 2}) (110)-aqueous interface. Measurements were made with various background electrolytes (NaCl, NaTr, RbCl, NaBr) at concentrations as high as 1 m. The results demonstrate that Zn{sub 2+} and Sr{sub 2+} reside primarily in the condensed layer and that the ion heights above the Ti-O surface plane are insensitive to ionic strength and the choice of background electrolyte (with <0.1 Angstroms changes over the full compositional range). The lack of any specific anion coadsorption upon probing with Br{sup -}, coupled with the insensitivity of Zn{sup 2+} and Sr{sup 2+} cation heights to changes in the background electrolyte, implies that anions do not play a significant role in the adsorption of these divalent metal ions to the rutile (110) surface. Absolute ion coverage measurements for Zn{sup 2+} and Sr{sup 2+} show a maximum Stern-layer coverage of {approx}0.5 monolayer, with no significant variation in height as a function of Stern-layer coverage. These observations are discussed in the context of Gouy-Chapman-Stern models of the electrical double layer developed from macroscopic sorption and pH-titration studies of rutile powder suspensions. Direct comparison between these experimental observations and the MUltiSIte Complexation (MUSIC) model predictions of cation surface coverage as a function of ionic strength revealed good agreement between measured and predicted surface coverages with no adjustable parameters.

  19. (Y0.5In0.5)Ba(Co,Zn)4O7 cathodes with superior high-temperature phase stability for solid oxide fuel cells

    SciTech Connect (OSTI)

    Young Nam, Kim; Kim, Jung-Hyun; Paranthaman, Mariappan Parans; Manthiram, Arumugam; Huq, Ashfia

    2012-01-01

    (Y0.5In0.5)BaCo4-xZnxO7 (1.0 x 2.0) oxides crystallizing in a trigonal P31c structure have been synthesized and explored as cathode materials for solid oxide fuel cells (SOFC). At a given Zn content, the (Y0.5In0.5)BaCo4-xZnxO7 sample with 50 % Y and 50 % In exhibits much improved phase stability at intermediate temperatures (600 - 800 oC) compared to the samples with 100 % Y or In. However, the substitution of Zn for Co in (Y0.5In0.5)Ba(Co4-xZnx)O7 (1.0 x 2.0) decreases the amount of oxygen loss on heating, total electrical conductivity, and cathode performance in SOFC while providing good long-term phase stability at high temperatures. Among the various chemical compositions investigated in the (Y0.5In0.5)Ba(Co4-xZnx)O7 system, the (Y0.5In0.5)BaCo3ZnO7 sample offers a combination of good electrochemical performance and low thermal expansion coefficient (TEC) while maintaining superior phase stability at 600 800 oC for 100 h. Fuel cell performances of the (Y0.5In0.5)Ba(Co3Zn)O7 + Ce0.8Gd0.2O1.9 (GDC) (50 : 50 wt. %) composite cathodes collected with anode-supported single cell reveal a maximum power density value of 521 mW cm-2 at 700 oC.

  20. In situ capping for size control of monochalcogenides (ZnS, CdS, and SnS) nanocrystals produced by anaerobic metal-reducing bacteria

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jang, Gyoung Gug; Jacobs, Christopher B.; Ivanov, Ilia N.; Joshi, Pooran C.; Meyer, III, Harry M.; Kidder, Michelle; Armstrong, Beth L.; Datskos, Panos G.; Graham, David E.; Moon, Ji -Won

    2015-07-24

    Metal monochalcogenide quantum dot nanocrystals of ZnS, CdS and SnS were prepared by anaerobic, metal-reducing bacteria using in situ capping by oleic acid or oleylamine. Furthermore, the capping agent preferentially adsorbs on the surface of the nanocrystal, suppressing the growth process in the early stages, thus leading to production of nanocrystals with a diameter of less than 5 nm.

  1. Structural, functional and immunogenic insights on Cu,Zn superoxide dismutase pathogenic virulence factors from Neisseria meningitidis and Brucella abortus

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pratt, Ashley J.; DiDonato, Michael; Shin, David S.; Cabelli, Diane E.; Bruns, Cami K.; Belzer, Carol A.; Gorringe, Andrew R.; Langford, Paul R.; Tabatabai, Louisa B.; Kroll, J. Simon; et al

    2015-10-12

    Bacterial pathogens Neisseria meningitidis and Brucella abortus pose threats to human and animal health worldwide, causing meningococcal disease and brucellosis, respectively. Mortality from acute N. meningitidis infections remains high despite antibiotics, and brucellosis presents alimentary and health consequences. Superoxide dismutases are master regulators of reactive oxygen, general pathogenicity factors and therefore therapeutic targets. Cu,Zn superoxide dismutases (SODs) localized to the periplasm promote survival by detoxifying superoxide radicals generated by major host antimicrobial immune responses. We discovered that passive immunization with an antibody directed at N. meningitidis SOD (NmSOD) was protective in a mouse infection model. To define the relevant atomicmore » details and solution assembly states of this important virulence factor, we report high-resolution and X-ray scattering analyses of NmSOD and SOD from B. abortus (BaSOD). The NmSOD structures revealed an auxiliary tetrahedral Cu-binding site bridging the dimer interface; mutational analyses suggested that this metal site contributes to protein stability, with implications for bacterial defense mechanisms. Biochemical and structural analyses informed us about electrostatic substrate guidance, dimer assembly and an exposed C-terminal epitope in the NmSOD dimer. In contrast, the monomeric BaSOD structure provided insights for extending immunogenic peptide epitopes derived from the protein. These collective results reveal unique contributions of SOD to pathogenic virulence, refine predictive motifs for distinguishing SOD classes and suggest general targets for anti-bacterial immune responses. The identified functional contributions, motifs, and targets distinguishing bacterial and eukaryotic SOD assemblies presented here provide a foundation for efforts to develop SOD-specific inhibitors or vaccines against these harmful pathogens. IMPORTANCE By protecting microbes against reactive oxygen insults, Cu,Zn superoxide dismutases (SODs) aid survival of many bacteria within their hosts. Despite the ubiquity and conservation of these key enzymes, notable species-specific differences relevant to pathogenesis remain undefined. To probe mechanisms that govern the functioning of Neisseria meningitidis and Brucella abortus SODs, we used X-ray structures, enzymology, modeling and murine infection experiments. We identified virulence determinants common to both homologs, assembly differences and a unique metal reservoir within meningococcal SOD that stabilizes the enzyme and may provide a safeguard against copper toxicity. The insights reported here provide a rationale and basis for SOD-specific drugs and extension of immunogen design to target two important pathogens that continue to pose global health threats.« less

  2. Reactive oxygen species on bone mineral density and mechanics in Cu,Zn superoxide dismutase (Sod1) knockout mice

    SciTech Connect (OSTI)

    Smietana, Michael J.; Arruda, Ellen M.; Mechanical Engineering, University of Michigan, 2250 GG Brown, 2350 Hayward, Ann Arbor, MI 48109; Program in Macromolecular Science and Engineering, University of Michigan, 2250 GG Brown, 2350 Hayward, Ann Arbor, MI 48109 ; Faulkner, John A.; Brooks, Susan V.; Molecular and Integrative Physiology, University of Michigan, 2025 BSRB, 109 Zina Pitcher Place, Ann Arbor, MI 48109-2200 ; Larkin, Lisa M.

    2010-12-03

    Research highlights: {yields} Reactive oxygen species (ROS) are considered to be a factor in the onset of a number of age-associated conditions, including loss of BMD. {yields} Cu,Zn-superoxide dismutase (Sod1) deficient mice have increased ROS, reduced bone mineral density, decreased bending stiffness, and decreased strength compared to WT controls. {yields} Increased ROS caused by the deficiency of Sod1, may be responsible for the changes in BMD and bone mechanics and therefore represent an appropriate model for studying mechanisms of age-associated bone loss. -- Abstract: Reactive oxygen species (ROS) play a role in a number of degenerative conditions including osteoporosis. Mice deficient in Cu,Zn-superoxide dismutase (Sod1) (Sod1{sup -/-} mice) have elevated oxidative stress and decreased muscle mass and strength compared to wild-type mice (WT) and appear to have an accelerated muscular aging phenotype. Thus, Sod1{sup -/-} mice may be a good model for evaluating the effects of free radical generation on diseases associated with aging. In this experiment, we tested the hypothesis that the structural integrity of bone as measured by bending stiffness (EI; N/mm{sup 2}) and strength (MPa) is diminished in Sod1{sup -/-} compared to WT mice. Femurs were obtained from male and female WT and Sod1{sup -/-} mice at 8 months of age and three-point bending tests were used to determine bending stiffness and strength. Bones were also analyzed for bone mineral density (BMD; mg/cc) using micro-computed tomography. Femurs were approximately equal in length across all groups, and there were no significant differences in BMD or EI with respect to gender in either genotype. Although male and female mice demonstrated similar properties within each genotype, Sod1{sup -/-} mice exhibited lower BMD and EI of femurs from both males and females compared with gender matched WT mice. Strength of femurs was also lower in Sod1{sup -/-} mice compared to WT as well as between genders. These data indicate that increased oxidative stress, due to the deficiency of Sod1 is associated with decreased bone stiffness and strength and Sod1{sup -/-} mice may represent an appropriate model for studying disease processes in aging bone.

  3. Effects of aluminum substitution on the crystal structure and magnetic properties in Zn{sub 2}Y-type hexaferrites

    SciTech Connect (OSTI)

    Xu, Wenfei; Yang, Jing E-mail: xdtang@sist.ecnu.edu.cn; Bai, Wei; Zhang, Yuanyuan; Tang, Kai; Duan, Chun-gang; Chu, Junhao; Tang, Xiaodong E-mail: xdtang@sist.ecnu.edu.cn

    2015-05-07

    Crystal structure and magnetic properties of multiferroic Y-type hexaferrites Ba{sub 0.5}Sr{sub 1.5}Zn{sub 2}(Fe{sub 1?x}Al{sub x}){sub 12}O{sub 22} (x?=?0, 0.04, 0.08, and 0.12) were investigated. The Z- and M-type impurity phases decrease with increasing Al content, and the pure phase samples can be obtained by modulating Al-doping. Lattice distortion exists in Al-doped samples due to the different radius of Al ion (0.535?) and Fe ion (0.645?). The microstructural morphologies show that the hexagonal shape grains can be observed in all the samples, and grain size decreases with increasing Al content. As for magnetic properties of Ba{sub 0.5}Sr{sub 1.5}Zn{sub 2}(Fe{sub 1?x}Al{sub x}){sub 12}O{sub 22}, there exist rich thermal- and field-driven magnetic phase transitions. Temperature dependence of zero-field cooling magnetization curves from 5?K to 800?K exhibit three magnetic phase transitions involving conical spin phase, proper-screw spin phase, ferromagnetic phase, and paramagnetic phase, which can be found in all the samples. Furthermore, the phase-transition temperatures can be modulated by varying Al content. In addition, four kinds of typical hysteresis loops are observed in pure phase sample at different temperatures, which reveal different magnetization processes of above-motioned magnetic spin structures. Typically, triple hysteresis loops in low magnetic field range from 0 to 0.5?T can be observed at 5?K, which suggests low-field driven magnetic phase transitions from conical spin order to proper-screw spin order and further to ferrimagnetic spin order occur. Furthermore, the coercive field (H{sub C}) and the saturation magnetization (M{sub S}) enhance with increasing Al content from x?=?0 to 0.08, and drop rapidly at x?=?0.12, which could be attribute to that in initial Al-doped process the pitch of spin helix increases and therefore magnetization enhances, but conical spin phase eventually collapses in higher-concentration Al-doping.

  4. The role of interparticle heterogeneities in the selenization pathway of Cu-Zn-Sn-S nanoparticle thin films: A real-time study

    SciTech Connect (OSTI)

    Carter, Nathaniel J.; Mainz, Roland; Walker, Bryce C.; Hages, Charles J.; Just, Justus; Klaus, Manuela; Schmidt, Sebastian S.; Weber, Alfons; Yang, Wei -Chang D.; Zander, Ole; Stach, Eric A.; Unold, Thomas; Agrawal, Rakesh

    2015-06-10

    Real-time energy dispersive x-ray diffraction (EDXRD) analysis has been utilized to observe the selenization of Cu-Zn-Sn-S nanoparticle films coated from three nanoparticle populations: Cu- and Sn-rich particles roughly 5 nm in size, Zn-rich nanoparticles ranging from 10 to 20 nm in diameter, and a mixture of both types of nanoparticles (roughly 1:1 by mass), which corresponds to a synthesis recipe yielding CZTSSe solar cells with reported total-area efficiencies as high as 7.9%. The EDXRD studies presented herein show that the formation of copper selenide intermediates during the selenization of mixed-particle films can be primarily attributed to the small, Cu- and Sn-rich particles. Moreover, the formation of these copper selenide phases represents the first stage of the CZTSSe grain growth mechanism. The large, Zn-rich particles subsequently contribute their composition to form micrometer-sized CZTSSe grains. In conclusion, these findings enable further development of a previously proposed selenization pathway to account for the roles of interparticle heterogeneities, which in turn provides a valuable guide for future optimization of processes to synthesize high quality CZTSSe absorber layers.

  5. Structural, elastic, electronic and phonon properties of SnX{sub 2}O{sub 4} (X=Mg, Zn, Cd) spinel from density functional theory

    SciTech Connect (OSTI)

    U?ur, Gkay; Candan, Abdullah

    2014-10-06

    First-principle calculations of structural, electronic, elastic and phonon properties of SnMg{sub 2}O{sub 4}, SnZn{sub 2}O{sub 4} and SnCd{sub 2}O{sub 4} compounds are presented, using the pseudo-potential plane waves approach based on density functional theory (DFT) within the generalized gradient approximation (GGA). The computed ground state structural parameters, i.e. lattice constants, internal free parameter and bulk modulus are in good agreement with the available theoretical results. Our calculated elastic constants are indicative of stability of SnX{sub 2}O{sub 4} (X=Mg, Zn, Cd) compounds in the spinel structure. The partial density of states (PDOS) of these compounds is in good agreement with the earlier ab-initio calculations. The phonon dispersion relations were calculated using the direct method. Phonon dispersion results indicate that SnZn{sub 2}O{sub 4} is dynamically stable, while SnMg{sub 2}O{sub 4} and SnCd{sub 2}O{sub 4} are unstable.

  6. Alternative current conduction mechanisms of organic-inorganic compound [N(CH{sub 3}){sub 3}H]{sub 2}ZnCl{sub 4}

    SciTech Connect (OSTI)

    Ben Bechir, M. Karoui, K.; Guidara, K.; Ben Rhaiem, A.; Tabellout, M.

    2014-04-21

    [N(CH{sub 3}){sub 3}H]{sub 2}ZnCl{sub 4} has been studied by X-ray powder diffraction patterns, differential scanning calorimetry (DSC), and impedance spectroscopy. The [N(CH{sub 3}){sub 3}H]{sub 2}ZnCl{sub 4} hybrid compound is crystallized at room temperature (T ? 300?K) in the orthorhombic system with Pnma space group. Five phase transitions (T{sub 1}?=?255?K, T{sub 2}?=?282?K, T{sub 3}?=?302?K, T{sub 4}?=?320?K, and T{sub 5}?=?346?K) have been proved by DSC measurements. The electrical technique was measured in the 10{sup ?1}-10{sup 7}?Hz frequency range and 233363?K temperature interval. The frequency dependence of alternative current (AC) conductivity is interpreted in terms of Jonscher's law. The AC electrical conduction in [N(CH{sub 3}){sub 3}H]{sub 2}ZnCl{sub 4} is analyzed by different processes, which can be attributed to several models: the correlated barrier hopping model in phase I, the overlapping large polaron tunneling model in phase II, the quantum mechanical tunneling model in phase IV, and the non-overlapping small polaron tunneling model in phases III, V, and VI. The conduction mechanism is studied with the help of Elliot's theory, and the Elliot's parameters are determined.

  7. Zn13(CrxAl1-x)27 (x = 0.34-0.37): a new intermetallic phase containing icosahedra as building units

    SciTech Connect (OSTI)

    Thimmaiah, Srinivasa; Han, Mi-Kyung; Miller, Gordon J.

    2011-03-13

    The title compounds Zn{sub 13}(Cr{sub x}Al{sub 1-x}){sub 27} (x = 0.34-0.37) were obtained by melting the pure elements at 923 K, and followed by a heat treatment at 723 K in a tantalum container. According to single crystal structural analysis, the title compounds crystallize in the rhombohedral system, adopting a new structure type (R-3m, a = 7.5971(8), c = 36.816(6), for crystal I). Single crystal X-ray structural analysis reveals a statistical mixing of Cr/Al in their crystallographic positions. Single crystal and powder X-ray diffraction as well as energy dispersive X-ray analyses suggested the title phase to have a narrow homogeneity range. The substructure of Zn{sub 13}(Cr{sub x}Al{sub 1-x}){sub 27} shows close resemblance with the Mn{sub 3}Al{sub 10} structure type. A bonding analysis, through crystal orbital Hamiltonian populations (COHPs), of 'Cr{sub 9}Al{sub 18}Zn{sub 13}' as a representative composition indicated that both homo- and heteronuclear interactions are important for the stability of this new phase.

  8. Characterization of Mg/Al butt joints welded by gas tungsten arc filling with Zn29.5Al0.5Ti filler metal

    SciTech Connect (OSTI)

    Liu, Fei; Wang, Hongyang; Liu, Liming, E-mail: liulm@dlut.edu.cn

    2014-04-01

    The multivariate alloying design of a welding joint is used in the Mg to Al welding process. A Zn29.5Al0.5Ti alloy is added as filler metal in gas tungsten arc welding of Mg and Al alloy joint based on the analysis of Al and Mg alloy characteristics. The tensile strength, microstructure, and phase constitution of the weld seam are analyzed. The formation of brittle and hard MgAl intermetallic compounds is avoided because of the effects of Zn, Al, and Ti. The average tensile strength of the joint is 148 MPa. Al{sub 3}Ti is first precipitated and functions as the nucleus of heterogeneous nucleation during solidification. Moreover, the precipitated AlMgZn{sub 2} hypoeutectic phase exhibited a feather-like structure, which enhances the property of the MgAl dissimilar joint. - Highlights: Mg alloy AZ31B and Al alloy 6061 are butt welded by fusion welding. The effect of Ti in filler metal is investigated. The formation of MgAl intermetallic compounds is avoided.

  9. Hyperfine structure and magnetic properties of Zn doped Co{sub 2}Z hexaferrite investigated by high-field Mössbauer spectroscopy

    SciTech Connect (OSTI)

    Lim, Jung Tae; Kim, Chul Sung

    2015-05-07

    The polycrystalline samples of Ba{sub 3}Co{sub 2−x}Zn{sub x}Fe{sub 24}O{sub 41} (x = 0.0, 0.5, 1.0, 1.5, and 2.0) were synthesized by the standard solid-state-reaction method. Based on the XRD patterns analyzed by Rietveld refinement, the structure was determined to be single-phased hexagonal with space group of P6{sub 3}/mmc. With increasing Zn ion concentration, the unit cell volume (V{sub u}) of samples was increased, as the sites of Fe{sup 3+} ions changed from tetrahedral to octahedral sites. We have obtained zero-field Mössbauer spectra of all samples at various temperatures ranging from 4.2 to 750 K. The measured spectra below T{sub C} were analyzed with six distinguishable sextets due to the superposition of ten-sextets for Fe sites, corresponding to the Z-type hexagonal ferrite. Also, the hyperfine field (H{sub hf}) and electric quadrupole shift (E{sub Q}) have shown abrupt changes around spin transition temperature (T{sub S}). In addition, Mössbauer spectra of all samples at 4.2 K were taken with an applied field ranging from 0 to 50 kOe, which indicates the decrease in the canting angle between applied field and H{sub hf} of samples with increasing Zn concentration.

  10. Point defects and p-type conductivity in Zn{sub 1x}Mn{sub x}GeAs{sub 2}

    SciTech Connect (OSTI)

    Kilanski, L.; Podgrni, A.; Dynowska, E.; Dobrowolski, W.

    2014-07-14

    Positron annihilation spectroscopy is used to study point defects in Zn{sub 1x}Mn{sub x}GeAs{sub 2} crystals with low Mn content 0?x?0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 10{sup 19}?p?10{sup 21}cm{sup ?3} in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 10{sup 16}?10{sup 18}cm{sup ?3}, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn{sub 1x}Mn{sub x}GeAs{sub 2} crystals.

  11. The role of interparticle heterogeneities in the selenization pathway of Cu-Zn-Sn-S nanoparticle thin films: A real-time study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Carter, Nathaniel J.; Mainz, Roland; Walker, Bryce C.; Hages, Charles J.; Just, Justus; Klaus, Manuela; Schmidt, Sebastian S.; Weber, Alfons; Yang, Wei -Chang D.; Zander, Ole; et al

    2015-06-10

    Real-time energy dispersive x-ray diffraction (EDXRD) analysis has been utilized to observe the selenization of Cu-Zn-Sn-S nanoparticle films coated from three nanoparticle populations: Cu- and Sn-rich particles roughly 5 nm in size, Zn-rich nanoparticles ranging from 10 to 20 nm in diameter, and a mixture of both types of nanoparticles (roughly 1:1 by mass), which corresponds to a synthesis recipe yielding CZTSSe solar cells with reported total-area efficiencies as high as 7.9%. The EDXRD studies presented herein show that the formation of copper selenide intermediates during the selenization of mixed-particle films can be primarily attributed to the small, Cu- andmore » Sn-rich particles. Moreover, the formation of these copper selenide phases represents the first stage of the CZTSSe grain growth mechanism. The large, Zn-rich particles subsequently contribute their composition to form micrometer-sized CZTSSe grains. In conclusion, these findings enable further development of a previously proposed selenization pathway to account for the roles of interparticle heterogeneities, which in turn provides a valuable guide for future optimization of processes to synthesize high quality CZTSSe absorber layers.« less

  12. Magnetic resonance investigation of Zn{sub 1−x}Fe{sub x}O properties influenced by annealing atmosphere

    SciTech Connect (OSTI)

    Raita, O.; Popa, A.; Toloman, D.; Stan, M.; Giurgiu, L. M.

    2013-11-13

    ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe{sup 3+} ions in Zn{sub 1−x}Fe{sub x}O powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature.

  13. Origin of the improved photo-catalytic activity of F-doped ZnWO{sub 4}: A quantum mechanical study

    SciTech Connect (OSTI)

    Sun, Honggang; Fan, Weiliu; Li, Yanlu; Cheng, Xiufeng; Li, Pan; Zhao, Xian

    2010-12-15

    Two different mechanisms for improving photo-catalytic activity in different types of F-doped ZnWO{sub 4} are tentatively proposed, based on density function theory calculations. When the lattice O atom is substituted by one F atom, our calculations show that a reduced W{sup 5+} center adjacent to the doped F atom will act as a trap for the photo-induced electron, and will thus result in a reduction of electron-hole recombination and improvement of the photo-catalytic activity. For the interstitial F-doped model, partial F 2p states mixing with O 2p states localize above the top of the valence band and act as the frontier orbital level. Electronic transitions from these localized states induce a red shift of about 54 nm of the optical absorption edge. This work shows that F-doped ZnWO{sub 4} will be a promising photo-catalyst with favorable photo-catalytic activity in the UV region. -- Graphical Abstract: DFT calculations are used to investigate the origin of the improved photo-activity of monoclinic ZnWO{sub 4} induced by the substituted and interstitial F-doping. Two possible mechanisms are tentatively put forward according to the F-doping types. Display Omitted

  14. Enrichment of magnetic alignment stimulated by {gamma}-radiation in core-shell type nanoparticle Mn-Zn ferrite

    SciTech Connect (OSTI)

    Naik, P. P.; Tangsali, R. B.; Sonaye, B.; Sugur, S.

    2013-02-05

    Core shell type nanoparticle Mn{sub x}Zn{sub 1-x}Fe{sub 2}O{sub 4} systems with x=0.55, 0.65 and 0.75 were prepared using autocombustion method. The systems were characterized using tools like XRD and IR for structure confirmation. Magnetic parameter measurements like Saturation magnetization and coercivity were obtained from hysteresis loop which exhibited a symmetry shift due to core shell nature of the nanoparticles. Nanoparticles of particle size between 21.2nm to 25.7nm were found to show 20 percent shrinkage after being radiated by the {gamma}-radiation. This is due to variation in the cation distribution which also affects the cell volume of the cubic cell. Lattice constant reduction observed is reflected in the magnetic properties of the samples. A considerable hike in the saturation magnetization of the samples was observed due to enrichment of magnetic alignment in the magnetic core of the particles. Samples under investigation were irradiated with gamma radiation from Co{sup 60} source for different time intervals.

  15. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  16. CdSe/ZnS quantum dots based electrochemical immunoassay for the detection of phosphorylated bovine serum albumin

    SciTech Connect (OSTI)

    Pinwattana, Kulwadee; Wang, Jun; Lin, Chiann Tso; Wu, Hong; Du, Dan; Lin, Yuehe; Chailapakul, Orawon

    2010-11-15

    A CdSe/ZnS quantum dot (QD) based electrochemical immunoassay of phosphorylated bovine serum albumin as a protein biomarker is presented. The QDs were used as labels and were conjugated with the secondary anti-phosphoserine antibody in a heterogeneous sandwich immunoassay. First, the primary BSA antibody was immobilized on polystyrene microwells, followed by the addition of BSA-OP. After that, the QD-labeled anti-phosphoserine antibody was added into microwells for immunorecognition. Finally, the bound QD was dissolved in an acid-dissolution step and was detected by electrochemical stripping analysis. The measured current responses were proportional to the concentration of BSA-OP. Under optimal conditions, the voltammetric response was linear over the range of 0.5 - 500 ng mL-1 of BSA-OP, with a detection limit of 0.5 ng mL-1 at a deposition potential of -1.2 V for 120 s. It also shows good reproducibility with a relative standard deviation of 8.6% of six times determination of 25 ng mL-1 of BSA-OP. This QD-based electrochemical immunoassay offers great promise for simple and cost-effective analysis of protein biomarkers.

  17. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn₁₋xZnxO alloys. At Zn compositions above x ≈ 0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  18. Effects of phase transformation on the microstructures and magnetostriction of Fe-Ga and Fe-Ga-Zn ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Lin, Yin-Chih Lin, Chien-Feng

    2015-05-07

    The phase transformation and magnetostriction of bulk Fe{sub 73}Ga{sub 27} and Fe{sub 73}Ga{sub 18}Zn{sub 9} (at.?%) ferromagnetic shape memory alloys (FSMs) were investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD), and a magnetostrictive-meter setup. For the Fe{sub 73}Ga{sub 27} FSM alloy solution treated at 1100?C for 4?h and quenched in ice brine, the antiphase boundary segments of the D0{sub 3} domain were observed in the A2 (disordered) matrix, and the Fe{sub 73}Ga{sub 27} FSM alloy had an optimal magnetostriction (?{sub ?}{sup s?}=?71??10{sup ?6} and ?{sub ?}{sup s?}=??31??10{sup ?6}). In Fe{sub 73}Ga{sub 27} FSM alloy as-quenched, aged at 700?C for 24?h, and furnace cooled, D0{sub 3} nanoclusters underwent phase transformation to an intermediate tetragonal phase (i.e., L1{sub 0}-like martensite) via Bain distortion, and finally L1{sub 2} (Fe{sub 3}Ga) structures precipitated, as observed by TEM and XRD. The L1{sub 0}-like martensite and L1{sub 2} phases in the aged Fe{sub 73}Ga{sub 27} FSM alloy drastically decreased the magnetostriction from positive to negative (?{sub ?}{sup s?}=??20??10{sup ?6} and ?{sub ?}{sup s?}=??8??10{sup ?6}). However, in Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy as-quenched and aged, the phase transformation of D0{sub 3} to an intermediate tetragonal martensite phase and precipitation of L1{sub 2} structures were not found. The results indicate that the aged Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy maintained stable magnetostriction (?{sub ?}{sup s?}=?36??10{sup ?6} and ?{sub ?}{sup s?}=??31??10{sup ?6}). Adding Zn can improve the ferromagnetic shape memory effect of aged Fe{sub 73}Ga{sub 18}Zn{sub 9} alloy, which may be useful in application of the alloy in high temperature environments.

  19. Effect of different processes and Ti/Zn molar ratios on the structure, morphology, and enhanced photoelectrochemical and photocatalytic performance of Ti3+ self-doped titanium–zinc hybrid oxides

    SciTech Connect (OSTI)

    Fu, Rongrong; Wang, Qingyao; Gao, shanmin; Wang, Zeyan; Huang, Baibiao; Dai, Ying; Lu, Jun

    2015-07-01

    Ti3+ self-doped titanium–zinc hybrid oxides with different phase compositions and morphologies were successfully synthesized using Zn powder as the reductant and Zn source by a chemical-reduction precipitation method with subsequent thermal treatment. The fabricated Ti3+ self-doped TiO2(A)/TiO2(R), TiO2(A)/TiO2(R)/ZnTiO3, and TiO2(A)/ZnO heterojunctions were characterized by X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and UV–Vis diffuse reflectance spectroscopy. The effects of various Ti/Zn molar ratios and preparation processes on the structural, morphological, optical, photocurrent and photocatalytic properties of the resultant samples were investigated systematically. Results reveal that Ti3+ self-doping enhances the photoabsorption capability of titanium–zinc hybrid oxides in the visible-light region. Moreover, different processes and Ti/Zn molar ratios play great influences on the structure, morphology, optical, photocurrent and photocatalytic properties of the final products. Ti3+ self-doped titanium–zinc hybrid oxides exhibit excellent photocurrent and photocatalytic activity than pure TiO2 and ZnTiO3 under visible-light irradiation (λ ≥ 400 nm). The most active Ti3+ self-doped titanium–zinc hybrid oxides photoanode presents significantly improved water splitting performance. The synergistic effect between the Ti3+ self-doped and heterojunctions is responsible for the enhanced performance of these materials.

  20. Electronic Structure and Optical Properties of Cu2ZnGeSe4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

    SciTech Connect (OSTI)

    Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea; Christensen, Steven T.; To, Bobby; Beall, Carolyn; Wei, Su-Huai; Repins, Ingid L.

    2015-11-19

    Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function?=?1+i?2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ? data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients ? are calculated from the modeled ? spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .