National Library of Energy BETA

Sample records for zn zurn ot

  1. OTS NOTE

    Office of Legacy Management (LM)

    941 OTS NOTE DATE: July 2, 1990 TO: W. Alexander Williams FROM : Don Mackenzie d%? SUBJECT: Elimination of 3 Facilities from NSRAP . + 9 Enclosed are elimination recommendations...

  2. GAUAGHER AND GALLAGHER ATTORmYS AT LAW, P.C. Ot4ECONWRJTIONPUtA

    Office of Legacy Management (LM)

    j ; ij 7 iir I,::? ir s1: 141 TL-2 tj .> Ii el)sTorl GAUAGHER AND GALLAGHER ATTORmYS AT LAW, P.C. Ot4ECONWRJTIONPUtA BOSTON. MASS. 02129 March 7, 1990 (617) 241.8aoo ?AX. (617) 141*?6W VIA TELEFAX Park Owen USDOE: Nuclear Facility De commissioning and site Remedial hotion oak Ridge National Laboratory P. 0. Box 2008 Building 2001-6050 Oak Ridge, TN 37831-6050 Re: Wesaahouse, Bloomfield, NJ Our File No.: 15094 (09) near M r. Owen: Pursuant to our telephone conversation of March 7, 1990, P1ca.w

  3. OTS NOTE

    Office of Legacy Management (LM)

    c3 Alexander Williams FROM: Ed Mitchellcm SUBJECT: Babcock and Wilcox Elimination Recommendation The purpose of this note is to provide you with certain inf regarding the ...

  4. OTS NOTE

    Office of Legacy Management (LM)

    FUSRAP NJ.18 Exxon Research and Engineering Company The Former Standard Oil Development Company Linden, New Jersey Site Function In the spring of 1942, Standard Oil Development ...

  5. OTS NOTE

    Office of Legacy Management (LM)

    2, 1990 TO: W. Alexander Williams FROM: Don Mackenzie &d> SUBJECT: Elimination of 3 Facilities from FUSRAP Enclosed are elimination recommendations for Vitro Chemical Co.,...

  6. OTS NOTE

    Office of Legacy Management (LM)

    January 15, 1991 TO: Alexander Williams FROM: Dan Stout@ SUBJECT: Gruen Watch Company Consideration Recommendation Attached for your review is a consideration recommendation for...

  7. OTS NOTE

    Office of Legacy Management (LM)

    ... Coal ash as : iightly elevated levels of naturally occurring uranium , radium , and thorium which ZXK voted during coal combustion. Nevertheless, several auger samples (Al5 through ...

  8. OTS NOTE

    Office of Legacy Management (LM)

    ... It is proposed that the Commission pay 4. 50 per pound of contained uranium oxide (U3C31, such pay- .ment to be in addition to a price, f. o. b. Chattanooga, TZM. , of 4. 25 per ...

  9. OTS NOTF

    Office of Legacy Management (LM)

    It also notes that 100 pounds of uranium oxide was shipped to the,Milwaukee airport for Fred Stroke (an AECArgonne employee). I recommend these two sites be added to the ...

  10. OTS NOTE

    Office of Legacy Management (LM)

    A telephone interview was conducted with a former Baker-Perkins employee who joined the company in the mid-1970's (see attached Contact Report). The person interviewed was not ...

  11. OTS NOTE

    Office of Legacy Management (LM)

    ...u; a&d de& o* CITY: de54 LPv ---...w-e-- STATE: CIA ------ OWNER(S) Current: 3 H bwd, ---... Owner contacted 0 yes PO; ...

  12. OTS NOTE

    Office of Legacy Management (LM)

    Source Material q Residue 0 Natural Radioactive Material from Non-Nuclear Activities 0 Man-Made 0 Other--- Comment ---...

  13. Solar energy system performance evaluation - final report for Honeywell OTS 45, Salt River Project, Phoenix, Arizona

    SciTech Connect (OSTI)

    Mathur, A K

    1983-09-01

    This report describes the operation and technical performance of the Solar Operational Test Site (OTS 45) at Salt River Project in Phoenix, Arizona, based on the analysis of data collected between April 1981 and March 31, 1982. The following topics are discussed: system description, performance assessment, operating energy, energy savings, system maintenance, and conclusions. The solar energy system at OTS 45 is a hydronic heating and cooling system consisting of 8208 square feet of liquid-cooled flat-plate collectors; a 2500-gallon thermal storage tank; two 25-ton capacity organic Rankine-cycle-engine-assisted water chillers; a forced-draft cooling tower; and associated piping, pumps, valves, controls and heat rejection equipment. The solar system has eight basic modes of operation and several combination modes. The system operation is controlled automatically by a Honeywell-designed microprocessor-based control system, which also provides diagnostics. Based on the instrumented test data monitored and collected during the 8 months of the Operational Test Period, the solar system collected 1143 MMBtu of thermal energy of the total incident solar energy of 3440 MMBtu and provided 241 MMBtu for cooling and 64 MMBtu for heating. The projected net annual electrical energy savings due to the solar system was approximately 40,000 kWh(e).

  14. ?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8,

    Office of Legacy Management (LM)

    GE 1 ;" qr)-1 s?llq ' p raspy.. c" ifa K. mris I talked with Hr. Wllllm cIF(Iy, Metrllurgist, Wnlon CarbId@ Nuclear cOrp8ny, 08k B&t&$@, Tenne66ee, on April 26, 1961. He informed me th&t the #rtioMl Northern birislon, Ame~ic6.n ?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8, la pePfopn1~ lo8lve forming studier for the. ilnion olo)w Wuolem Conpmy "p l7?JHa). The work at National Northern l#rirc.- alon ir under the 6upenl6lon of Ehsll Phillpohuc4~, v of

  15. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications

    SciTech Connect (OSTI)

    Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos,A. Paul

    2007-05-01

    Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.

  16. Y H-S I-H HATIOHAL LEAth~~Y~~OF' OtUO ' Industrial Hygiene No...

    Office of Legacy Management (LM)

    H-S I-H HATIOHAL LEAthYOF' OtUO ' Industrial Hygiene No. P.O. Box 158)At.' He&bykation Sample Nos. ? Sk. 0 qq Cinchnail 31;Obio Type of SampleCI" lz -- HEALTH AND SAFETY ...

  17. THE DIVERSITY OF MASSIVE STAR OUTBURSTS. I. OBSERVATIONS OF SN2009ip, UGC 2773 OT2009-1, AND THEIR PROGENITORS

    SciTech Connect (OSTI)

    Foley, Ryan J.; Berger, Edo; Challis, Peter J.; Soderberg, Alicia M.; Fox, Ori; Levesque, Emily M.; Ivans, Inese I.; Rhoads, James E.

    2011-05-01

    Despite both being outbursts of luminous blue variables (LBVs), SN 2009ip and UGC 2773 OT2009-1 have very different progenitors, spectra, circumstellar environments, and possibly physical mechanisms that generated the outbursts. From pre-eruption Hubble Space Telescope images, we determine that SN 2009ip and UGC 2773 OT2009-1 have initial masses of {approx}> 60 and {approx}> 25 M{sub sun}, respectively. Optical spectroscopy shows that at peak, SN 2009ip had a 10,000 K photosphere and its spectrum was dominated by narrow H Balmer emission, similar to classical LBV giant outbursts, also known as 'supernova impostors'. The spectra of UGC 2773 OT2009-1, which also have narrow H{alpha} emission, are dominated by a forest of absorption lines, similar to an F-type supergiant. Blueshifted absorption lines corresponding to ejecta at a velocity of 2000-7000 km s{sup -1} are present in later spectra of SN 2009ip-an unprecedented observation for LBV outbursts, indicating that the event was the result of a supersonic explosion rather than a subsonic outburst. The velocity of the absorption lines increases between two epochs, suggesting that there were two explosions in rapid succession. A rapid fading and rebrightening event concurrent with the onset of the high-velocity absorption lines is consistent with the double-explosion model. A near-infrared excess is present in the spectra and photometry of UGC 2773 OT2009-1 that is consistent with {approx}2100 K dust emission. We compare the properties of these two events and place them in the context of other known massive star outbursts such as {eta} Car, NGC 300 OT2008-1, and SN 2008S. This qualitative analysis suggests that massive star outbursts have many physical differences that can manifest as the different observables seen in these two interesting objects.

  18. Effect of ZnO facet on ethanol steam reforming over Co/ZnO (Journal...

    Office of Scientific and Technical Information (OSTI)

    Effect of ZnO facet on ethanol steam reforming over CoZnO Citation Details In-Document Search Title: Effect of ZnO facet on ethanol steam reforming over CoZnO The effects of ZnO ...

  19. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect (OSTI)

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  20. Preparation of new morphological ZnO and Ce-doped ZnO

    SciTech Connect (OSTI)

    Chelouche, A.; Djouadi, D.; Aksas, A.

    2013-12-16

    ZnO micro-tori and cerium doped hexangulars ZnO have been prepared by the sol-gel method under methanol hypercritical conditions of temperature and pressure. X-ray diffraction (XRD) measurement has revealed the high crystalline quality and the nanometric size of the samples. Scanning electron microscopy (SEM) has shown that the ZnO powder has a torus-like shape while that of ZnO:Ce has a hexangular-like shape, either standing free or inserted into the cores of ZnO tori. Transmission electron microscopy (TEM) has revealed that the ZnO particles have sizes between 25 and 30 nm while Ce-doped ZnO grains have diameters ranging from 75 nm to 100 nm. Photoluminescence spectra at room temperature of the samples have revealed that the introduction of cerium in ZnO reduces the emission intensity lines, particularly the ZnO red and green ones.

  1. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  2. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  3. Piezoelectric and luminescent properties of ZnO nanostructures...

    Office of Scientific and Technical Information (OSTI)

    Conference: Piezoelectric and luminescent properties of ZnO nanostructures on Ag films. Citation Details In-Document Search Title: Piezoelectric and luminescent properties of ZnO ...

  4. An electrostatic nanogenerator based on ZnO/ZnS core/shell electrets with stabilized quasi-permanent charge

    SciTech Connect (OSTI)

    Wang, Chao; Cai, Liang; Feng, Yajuan; Chen, Lin; Yan, Wensheng E-mail: zhsun@ustc.edu.cn; Liu, Qinghua; Yao, Tao; Hu, Fengchun; Pan, Zhiyun; Sun, Zhihu E-mail: zhsun@ustc.edu.cn; Wei, Shiqiang

    2014-06-16

    ZnO-based nanogenerators with excellent performance and convenient functionalization are particularly desirable for self-powered technology, which is however difficult to achieve simultaneously in traditional piezoelectric ZnO nanogenerators. Here, we report a design of electrostatic ZnO nanogenerator by virtue of a type-II ZnO/ZnS core/shell nanostructure electrets, which can turn acoustic waves into electric power with an energy conversion efficiency of 2.2%. The ZnO/ZnS core/shell electrets are charged by ultraviolet irradiation with a long-term stability of the electrostatic charges under ambient condition. The electronic and atomic structure evolution in the charged ZnO/ZnS core/shell electrets are also discussed by detailed experimental and theoretical investigations. This design opens up an alternative path for fabricating robust ZnO-based nanogenerator for future nanotechnology application.

  5. OTS NOTE DATE: TO: FROM:

    Office of Legacy Management (LM)

    The data sheets report the results of radiological monitoring conducted during operation of an oil- cooled drillinghollowing machine. The sheets record measurements during five ...

  6. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Wenyan; Zhang, Yu; Ruan, Cheng; Wang, Dan; Zhang, Tieqiang; Feng, Yi; Gao, Wenzhu; Yin, Jingzhi; Wang, Yiding; Riley, Alexis P.; et al

    2015-01-01

    The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to themore » low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.« less

  7. ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huso, Jesse; Morrison, John L.; Che, Hui; Sundararajan, Jency P.; Yeh, Wei Jiang; McIlroy, David; Williams, Thomas J.; Bergman, Leah

    2011-01-01

    An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

  8. Homoepitaxy of ZnO and MgZnO Films at 90 C

    SciTech Connect (OSTI)

    Ehrentraut, Dirk; Goh, Gregory K.L.; Fujii, Katsushi; Ooi, Chin Chun; Quang, Le Hong; Fukuda, Tsuguo; Kano, Masataka; Zhang, Yuantao; Matsuoka, Takashi

    2014-06-01

    The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, Mg{sub x}Zn{sub 1?x}O, films under very low temperature conditions at T=90 C and ambient pressure has been explored. A maximum Mg content of 1 mol% was recorded by energy dispersive spectroscopy. The growth on the polar (0 0 0 1) and (0 0 0 1) faces resulted in films that are strongly different in their structural and optical quality as evidenced by high-resolution X-ray diffraction, secondary electron microscopy, and photoluminescence. This is a result of the chemistry and temperature of the solution dictating the stability range of growth-governing metastable species. The use of trisodium citrate, Na{sub 3}C{sub 6}H{sub 5}O{sub 7}, yielded coalesced, mirror-like homoepitaxial films whereas adding magnesium nitrate hexahydrate, Mg(NO{sub 3}){sub 2}6H{sub 2}O, favors the growth of films with pronounced faceting. - Graphical abstract: Homoepitaxial ZnO films grown from aqueous solution below boiling point of water on a ZnO substrate with off-orientation reveal parallel grooves that are characterized by (1 0 1{sup } 1) facets. Adding trisodium citrate yields closed, single-crystalline ZnO films, which can further be functionalized. Alloying with MgO yields MgZnO films with low Mg content only. - Highlights: A simple method to synthesize uniform single crystalline homoepitaxial ZnO and MgZnO films. ZnO growth on (0 0 0 1) and (0 0 0 1{sup }) face resulted in films that are strongly different in their structural and optical quality. Single crystalline MgZnO film was fabricated under mild conditions (90 C and ambient pressure). Mg incorporation of nearly 1 mol% was obtained while maintaining single phase wurtzite structure.

  9. Cyclotron production of {sup 61}Cu using natural Zn and enriched {sup 64}Zn targets

    SciTech Connect (OSTI)

    Asad, A. H.; Smith, S. V.; Chan, S.; Jeffery, C. M.; Morandeau, L.; Price, R. I.

    2012-12-19

    Copper-61 ({sup 61}Cu) shares with {sup 64}Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study {sup 61}Cu was produced using the {sup 64}Zn(p,{alpha}){sup 61}Cu reaction on natural Zn or enriched {sup 64}Zn targets. The enriched {sup 64}Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30{mu}A; at 11.7, 14.5 or 17.6MeV over 30-60min. The {sup 61}Cu (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The {sup 64}Zn target material was recovered after each run, for re-use. In a direct comparison with enriched {sup 64}Zn-target results, {sup 61}Cu production using the cheaper {sup nat}Zn target proved to be an effective alternative.

  10. Electroluminescence of ZnO-based semiconductor heterostructures

    SciTech Connect (OSTI)

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  11. Formation of Zn-rich phyllosilicate, Zn-layered double hydroxide and hydrozincite in contaminated calcareous soils

    SciTech Connect (OSTI)

    Jacquat, Olivier; Voegelin, Andreas; Villard, Andre; Marcus, Matthew A.; Kretzschmar, Ruben

    2007-10-15

    Recent studies demonstrated that Zn-phyllosilicate- and Zn-layered double hydroxide-type (Zn-LDH) precipitates may form in contaminated soils. However, the influence of soil properties and Zn content on the quantity and type of precipitate forming has not been studied in detail so far. In this work, we determined the speciation of Zn in six carbonate-rich surface soils (pH 6.2 to 7.5) contaminated by aqueous Zn in the runoff from galvanized power line towers (1322 to 30090 mg/kg Zn). Based on 12 bulk and 23 microfocused extended X-ray absorption fine structure (EXAFS) spectra, the number, type and proportion of Zn species were derived using principal component analysis, target testing, and linear combination fitting. Nearly pure Zn-rich phyllosilicate and Zn-LDH were identified at different locations within a single soil horizon, suggesting that the local availabilities of Al and Si controlled the type of precipitate forming. Hydrozincite was identified on the surfaces of limestone particles that were not in direct contact with the soil clay matrix. With increasing Zn loading of the soils, the percentage of precipitated Zn increased from {approx}20% to {approx}80%, while the precipitate type shifted from Zn-phyllosilicate and/or Zn-LDH at the lowest studied soil Zn contents over predominantly Zn-LDH at intermediate loadings to hydrozincite in extremely contaminated soils. These trends were in agreement with the solubility of Zn in equilibrium with these phases. Sequential extractions showed that large fractions of soil Zn ({approx}30% to {approx}80%) as well as of synthetic Zn-kerolite, Zn-LDH, and hydrozincite spiked into uncontaminated soil were readily extracted by 1 M NH{sub 4}NO{sub 3} followed by 1 M NH{sub 4}-acetate at pH 6.0. Even though the formation of Zn precipitates allows for the retention of Zn in excess to the adsorption capacity of calcareous soils, the long-term immobilization potential of these precipitates is limited.

  12. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect (OSTI)

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  13. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  14. Impact of air-exposure on the chemical and electronic structure ofZnO:Zn3N2 thin films

    SciTech Connect (OSTI)

    Bar, M.; Ahn, K.-S.; Shet, S.; Yan, Y.; Weinhardt, L.; Fuchs, O.; Blum, M.; Pookpanratana, S.; George, K.; Yang, W.; Denlinger, J.D.; Al-Jassim, M.; Heske, C.

    2008-09-08

    The chemical and electronic surface structure of ZnO:Zn3N2 ("ZnO:N") thin films with different N contents was investigated by soft x-ray emission spectroscopy. Upon exposure to ambient air (in contrast to storage in vacuum), the chemical and electronic surface structure of the ZnO:N films changes substantially. In particular, we find that the Zn3N2/(Zn3N2+ZnO) ratio decreases with exposure time and that this change depends on the initial N content. We suggest a degradation mechanism based on the reaction of the Zn3N2 content with atmospheric humidity.

  15. Spin noise spectroscopy of ZnO

    SciTech Connect (OSTI)

    Horn, H.; Berski, F.; Hbner, J.; Oestreich, M.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  16. Stable highly conductive ZnO via reduction of Zn vacancies

    SciTech Connect (OSTI)

    Look, David C.; Droubay, Timothy C.; Chambers, Scott A.

    2012-09-04

    Growth of Ga-doped ZnO by pulsed laser deposition at 200 ?C in an ambient of Ar and H2 produces a resistivity ? of ~ 1.5 x 10-4 ?-cm, stable to 500 ?C. Annealing on Zn foil reduces ? to ~ 1.2 x 10-4 ?-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

  17. Optical probing of MgZnO/ZnO heterointerface confinement potential energy levels

    SciTech Connect (OSTI)

    Solovyev, V. V.; Van'kov, A. B.; Kukushkin, I. V.; Falson, J.; Kozuka, Y.; Zhang, D.; Smet, J. H.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2015-02-23

    Low-temperature photoluminescence and reflectance measurements were employed to study the optical transitions present in two-dimensional electron systems confined at Mg{sub x}Zn{sub 1x}O/ZnO heterojunctions. Transitions involving A- and B-holes and electrons from the two lowest subbands formed within the confinement potential are detected. In the studied density range of 2.06.5??10{sup 11?}cm{sup ?2}, the inter-subband splitting is measured and the first excited electron subband is shown to be empty of electrons.

  18. Optical Properties of ZnO-Alloyed Nanocrystalline Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Che, Hui; Huso, Jesse; Morrison, John L.; Thapa, Dinesh; Huso, Michelle; Yeh, Wei Jiang; Tarun, M. C.; McCluskey, M. D.; Bergman, Leah

    2012-01-01

    ZnO is emore » merging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on M g x Z n 1 − x O and Z n S 1 − x O x nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg 0 .3 Zn 0 .7 O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg 0 .3 Zn 0 .7 O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS 0 .76 O 0 .24 and ZnS 0 .16 O 0 .84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS 0 .16 O 0 .84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification.« less

  19. The ZnO p-n homojunctions modulated by ZnMgO barriers

    SciTech Connect (OSTI)

    Yang, Jing-Jing; Fang, Qing-Qing Wang, Dan-Dan; Du, Wen-Han

    2015-04-15

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  20. Hierarchical ZnO Structures Templated with Amino Acid Based Surfactant...

    Office of Scientific and Technical Information (OSTI)

    Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants Citation Details In-Document Search Title: Hierarchical ZnO Structures Templated with Amino Acid Based ...

  1. Neutral nitrogen acceptors in ZnO: The {sup 67}Zn hyperfine interactions

    SciTech Connect (OSTI)

    Golden, E. M.; Giles, N. C.; Evans, S. M.; Halliburton, L. E.

    2014-03-14

    Electron paramagnetic resonance (EPR) is used to characterize the {sup 67}Zn hyperfine interactions associated with neutral nitrogen acceptors in zinc oxide. Data are obtained from an n-type bulk crystal grown by the seeded chemical vapor transport method. Singly ionized nitrogen acceptors (N{sup −}) initially present in the crystal are converted to their paramagnetic neutral charge state (N{sup 0}) during exposure at low temperature to 442 or 633 nm laser light. The EPR signals from these N{sup 0} acceptors are best observed near 5 K. Nitrogen substitutes for oxygen ions and has four nearest-neighbor cations. The zinc ion along the [0001] direction is referred to as an axial neighbor and the three equivalent zinc ions in the basal plane are referred to as nonaxial neighbors. For axial neighbors, the {sup 67}Zn hyperfine parameters are A{sub ‖} = 37.0 MHz and A{sub ⊥} = 8.4 MHz with the unique direction being [0001]. For nonaxial neighbors, the {sup 67}Zn parameters are A{sub 1} = 14.5 MHz, A{sub 2} = 18.3 MHz, and A{sub 3} = 20.5 MHz with A{sub 3} along a [101{sup ¯}0] direction (i.e., in the basal plane toward the nitrogen) and A{sub 2} along the [0001] direction. These {sup 67}Zn results and the related {sup 14}N hyperfine parameters provide information about the distribution of unpaired spin density at substitutional neutral nitrogen acceptors in ZnO.

  2. RAMATION V=W Ot TOTS= t sAy VnoffZW COMM1 AV 10i90 2M3 AM=W V A CLSI~LL331M A1N2UW

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    t9, S. nTCmI RAMATION V=W Ot TOTS= t sAy VnoffZW COMM1 AV 10i90 2M3 AM=W V A CLSI~LL331M A1N2UW OMA1ID9 V3 WMM I~UMMIM UU &!% W 2W WT AM 0? ?Ml U&O(1 LW pAM Mr MMW31 T!WOLVSD A GUS =-o &L MCMA I h MMK ON PLUPCMTtft GJ DR P -M~ CAM~ 07 W ULOW~ M *!Ti ~~mum 0sflOY iftJ A SLXQT OUT (Wi M I M ra IJJW MarB~ *~ W? $MOM.~ HMP~ IT V=h MMOTM RW1& 07W O RAttcMUU w~A0AO wAf~ K 43)AN wA BE tluywxwD (b(6 l~U %I S~)6 ASSA~ r 6 AM MWOim~~ SUM v~ DM 'VAT M OM1 IN * M S W IMIEf To MIK Row.

  3. Mobility of indium on the ZnO(0001) surface

    SciTech Connect (OSTI)

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  4. Electrodeposition of Zn based nanostructure thin films for photovoltaic applications

    SciTech Connect (OSTI)

    Al-Bathi, S. A. M.

    2015-03-30

    We present here a systematic study on the synthesis thin films of various ZnO, CdO, Zn{sub x}Cd{sub 1-x} (O) and ZnTe nanostructures by electrodeposition technique with ZnCl{sub 2,} CdCl{sub 2} and ZnSO{sub 4} solution as starting reactant. Several reaction parameters were examined to develop an optimal procedure for controlling the size, shape, and surface morphology of the nanostructure. The results showed that the morphology of the products can be carefully controlled through adjusting the concentration of the electrolyte. The products present well shaped Nanorods arrays at specific concentration and temperature. UV-VIS spectroscopy and X-ray diffraction results show that the product presents good crystallinity. A possible formation process has been proposed.

  5. Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

    SciTech Connect (OSTI)

    K, P.; Tekmen, S.; Baltakesmez, A.; Tzemen, S.; Meral, K.; Onganer, Y.

    2013-12-15

    In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from ?0.9 V to ?1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively.

  6. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  7. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect (OSTI)

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  8. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of air-gap dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  9. Polarized Raman scattering of single ZnO nanorod

    SciTech Connect (OSTI)

    Yu, J. L. Lai, Y. F. Wang, Y. Z.; Cheng, S. Y.

    2014-01-21

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup high} in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A{sub 1}(TO) and E{sub 1}(TO) phonon modes normalized to that of the E{sub 2}{sup high} phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer.

  10. Electrodeposition of zinc on glassy carbon from ZnCl/sub 2/ and ZnBr/sub 2/ electrolytes

    SciTech Connect (OSTI)

    McBreen, J.; Gannon, E.

    1983-08-01

    The initial stages of the electrocrystallization of zinc from 3M ZnCl/sub 2/ and 3M ZnBr/sub 2/ on glassy carbon has been investigated using cyclic voltametry, the potential step method, and scanning electron microscopy. Particular care was taken to ensure electrolyte purity and to eliminate resistance effects in the measurements. The nucleation overvoltage in 3M ZnCl/sub 2/ was about 17 and about 12 mV in 3M ZnBr/sub 2/. In 3M ZnCl/sub 2/, the current transients from the potential step measurements could be fitted to a simple model that assumes instantaneous nucleation followed by growth of three dimensional centers under kinetic control. A similar mechanism is operative for 3M ZnBr/sub 2/ at low overvoltages. At higher overvoltages, the current transient is governed by mixed kinetic and diffusion control and cannot be fitted to a simple model. The lower nucleation overvoltage and the faster kinetics in 3M ZnBr/sub 2/ is correlated with the lower stability constants for the zinc bromide complexes. Erroneous results are obtained when resistance effects are not accounted for.

  11. Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

    SciTech Connect (OSTI)

    Maaloul, L.; Gangwar, R. K.; Stafford, L.

    2015-07-15

    A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from ?115 to ?300?V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5??1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200500?nm revealed a constant excitation temperature of 0.33??0.04?eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12?cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

  12. Pressure-Induced Structural Transformations of ZnO Nanowires...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Pressure-Induced Structural Transformations of ZnO Nanowires Probed by X-ray Diffraction Citation Details In-Document Search Title: Pressure-Induced Structural ...

  13. Evolution of quasiparticle states with and without a Zn impurity...

    Office of Scientific and Technical Information (OSTI)

    Title: Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Authors: Pan, Lihua ; Li, Jian ; Tai, Yuan-Yen ; Graf, Matthias J. ; Zhu, ...

  14. Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kelly, Priscilla; Liu, Mingzhao; Kuznetsova, Lyuba

    2016-04-07

    In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8more » μm wavelength.« less

  15. Selective Zn2+ sensing using a modified bipyridine complex

    SciTech Connect (OSTI)

    Akula, Mahesh; El-Khoury, Patrick Z.; Nag, Amit; Bhattacharya, Anupam

    2014-06-01

    A novel fluorescent Zn2+ sensor, 4-(pyridin-2-yl)-3H-pyrrolo[2, 3-c]quinoline (PPQ), has been designed, synthesized and characterized by various spectroscopic and analytical techniques. PPQ exhibits superior detection of Zn2+ in the presence of various cations tested, including Cd2+ and Hg2+, via wavelength shifted fluorescence intensity enhancement. The emission wavelength at 500 nm, ensures probable noninterference from cellular components while performing biological applications.

  16. High efficient ZnO nanowalnuts photocatalyst: A case study

    SciTech Connect (OSTI)

    Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

    2014-11-15

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  17. Synthesis, structural, optical and Raman studies of pure and lanthanum doped ZnSe nanoparticles

    SciTech Connect (OSTI)

    Kumar, Pushpendra; Singh, Jai; Pandey, Mukesh Kumar; Jeyanthi, C.E.; Siddheswaran, R.; Paulraj, M.; Hui, K.N.; Hui, K.S.

    2014-01-01

    Graphical abstract: - Highlights: • Template-free synthesis of ZnSe and ZnSe:La nanoparticles was developed at low temperature 100 °C. • Cubic ZnSe and ZnSe:La nanoparticles were obtained by chemical route. • As-synthesized ZnSe:La nanoparticles showed higher emission intensity than ZnSe nanoparticles. • Band gap (E{sub g}) of ZnSe nanoparticles was bigger than ZnSe nanoparticles due to nanosized effect. - Abstract: In this work, a simple, effective and reproducible chemical synthetic route for the production of high-quality, pure ZnSe nanoparticles (NPs), and lanthanum-doped ZnSe (ZnSe:La) NPs is presented. The wide bandgap, luminescent pure ZnSe and ZnSe:La NPs has been synthesized at a low temperature (100 °C) in a single template-free step. The size and optical bandgap of the NPs was analyzed from powder X-ray diffraction (XRD), UV–visible (UV–vis) spectroscopy, transmission electron microscopy (TEM), and high resolution transmission electron microscopy (HRTEM). A broad photoluminescence (PL) emission across the visible spectrum has been demonstrated by a systematic blue-shift in emission due to the formation of small nanoparticles. Here, contribution to emission intensity from surface states of NPs increases with La doping. TEM data revealed that the average size of ZnSe and ZnSe:La NPs is 14 and 8 nm, respectively. On the other hand, band gap energy E{sub g} of ZnSe and ZnSe:La NPs were found to be 3.59 eV and 3.65 eV, respectively. Results showed that hydrazine hydrate played multiple roles in the formation of ZnSe and ZnSe:La NPs. A possible reaction mechanism for the growth of NPs is also discussed.

  18. Spray pyrolysis deposition of Cu-ZnO and Zn-SnO{sub 2} solar cells

    SciTech Connect (OSTI)

    Khelfane, A.; Tarzalt, H.; Sebboua, B.; Zerrouki, H.; Kesri, N.

    2015-12-31

    Large-gap metal oxides, such as titanium, tin, and zinc oxides, have attracted great interest because of their remarkable potential in dye-sensitized solar cells (DSSC) and their low cost and simple preparation procedure. In this work, we investigated several Zn-SnO{sub 2} and Cu-ZnO thin films that were sprayed under different experimental conditions. We varied [Zn/[Sn] and [Cu/[Zn] ratios, calculated on atomic percent in the starting solution. We report some structural results of the films using X-ray diffraction. Optical reflection and transmission spectra investigated by an UV/VIS/NIR spectrophotometer permit the determination of optical constants. The direct band gap was deduced from the photon energy dependence of the absorption coefficient.

  19. Synthesis of reduced graphene oxide/ZnO nanorods composites on graphene coated PET flexible substrates

    SciTech Connect (OSTI)

    Huang, Lei, E-mail: leihuang@shnu.edu.cn; Guo, Guilue; Liu, Yang; Chang, Quanhong; Shi, Wangzhou

    2013-10-15

    Graphical abstract: - Highlights: ZnO nanorods synthesized on CVD-graphene and rGO surfaces, respectively. ZnO/CVD-graphene and ZnO/rGO form a distinctive porous 3D structure. rGO/ZnO nanostructures possibility in energy storage devices. - Abstract: In this work, reduced graphene oxide (rGO)/ZnO nanorods composites were synthesized on graphene coated PET flexible substrates. Both chemical vapor deposition (CVD) graphene and reduced graphene oxide (rGO) films were prepared following by hydrothermal growth of vertical aligned ZnO nanorods. Reduced graphene sheets were then spun coated on the ZnO materials to form a three dimensional (3D) porous nanostructure. The morphologies of the ZnO/CVD graphene and ZnO/rGO were investigated by SEM, which shows that the ZnO nanorods grown on rGO are larger in diameters and have lower density compared with those grown on CVD graphene substrate. As a result of fact, the rough surface of nano-scale ZnO on rGO film allows rGO droplets to seep into the large voids of ZnO nanorods, then to form the rGO/ZnO hierarchical structure. By comparison of the different results, we conclude that rGO/ZnO 3D nanostructure is more desirable for the application of energy storage devices.

  20. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    SciTech Connect (OSTI)

    Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UVvisible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by JV curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ? ZnS layers were deposited with two different ways. ? The way of SILAR is more beneficial for retarding the back transfer of electrons. ? The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  1. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  2. Synthesis, characterization and optical properties of hybrid PVAZnO nanocomposite: A composition dependent study

    SciTech Connect (OSTI)

    Hemalatha, K.S. [Department of Physics, Bangalore University, Bangalore 560 056, Karnataka (India); Department of Physics, Maharani's Science College for Women, Palace Road, Bangalore 560 001, Karnataka (India); Rukmani, K., E-mail: rukmani9909@yahoo.co.in [Department of Physics, Bangalore University, Bangalore 560 056, Karnataka (India); Suriyamurthy, N. [Radiological Safety Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); Nagabhushana, B.M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore 560 054, Karnataka (India)

    2014-03-01

    Graphical abstract: - Highlights: ZnO nanoparticles were prepared by solution combustion method. PVAZnO nanocomposites were synthesized by solution casting method. Doped and undoped films were characterized using different techniques. Red shift in optical band gap was observed in Nanocomposite films with respect to nano ZnO. Photoluminescence intensity was found to be optimum for PVA10 mol% ZnO nanocomposite film. - Abstract: Nanocomposites of poly vinyl alcohol (PVA) and ZnO have been synthesized using the solution casting technique for different concentrations of nano ZnO powder prepared by low temperature solution combustion method. The formation of polymer nanocomposite and changes in the structural and micro structural properties of the materials were investigated by X-ray diffraction, Energy dispersive X ray spectroscopy and optical microscopy techniques (FTIR and UVVisible). The surface morphology of PVAZnO nanocomposite films were elucidated using Scanning Electron Microscopy. The optical absorption spectrum of nano ZnO shows blue shift in the optical band gap energy with respect to characteristic bulk ZnO at room temperature, whereas PVAZnO hybrid films show red shift with respect to nano ZnO. The photoluminescence studies show that the intensity of the blue emission (470 nm) varies with change in concentration of ZnO with an optimum intensity observed at 10 mol% of ZnO.

  3. High mobility ZnO nanowires for terahertz detection applications

    SciTech Connect (OSTI)

    Liu, Huiqiang; Peng, Rufang E-mail: chusheng@mail.sysu.edu.cn; Chu, Shijin; Chu, Sheng E-mail: chusheng@mail.sysu.edu.cn

    2014-07-28

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  4. Nitrogen is a deep acceptor in ZnO

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.

    2011-04-14

    Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. Thus the deep-acceptor behavior can be explained by the low energy of the ZnO valence bandmore » relative to the vacuum level.« less

  5. Process for fabricating ZnO-based varistors

    DOE Patents [OSTI]

    Lauf, Robert J.

    1985-01-01

    The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi.sub.2 O.sub.3. The mix is hot-pressed to form a compact at temperatures below 850.degree. C. and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.

  6. Process for fabricating ZnO-based varistors

    DOE Patents [OSTI]

    Lauf, R.J.

    The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi/sub 2/O/sub 3/. The mix is hot-pressed to form a compact at temperatures below 850/sup 0/C and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.

  7. Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping

    SciTech Connect (OSTI)

    Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak

    2007-12-03

    We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

  8. A Reversible Structural Phase Transition in ZnV2O6 at High Pressures...

    Office of Scientific and Technical Information (OSTI)

    A Reversible Structural Phase Transition in ZnV2O6 at High Pressures Citation Details In-Document Search Title: A Reversible Structural Phase Transition in ZnV2O6 at High Pressures ...

  9. Luminescent properties of solution-grown ZnO nanorods. (Journal...

    Office of Scientific and Technical Information (OSTI)

    Luminescent properties of solution-grown ZnO nanorods. Citation Details In-Document Search Title: Luminescent properties of solution-grown ZnO nanorods. The optical properties of ...

  10. Local structures of copper-doped ZnO films (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Local structures of copper-doped ZnO films Citation Details In-Document Search Title: Local structures of copper-doped ZnO films Authors: Ma, Q. ; Buchholz, D.B. ; Chang, R.P.H. ...

  11. One-step electrochemical synthesis of a grapheneZnO hybrid for improved photocatalytic activity

    SciTech Connect (OSTI)

    Wei, Ang; Xiong, Li; Sun, Li; Liu, Yanjun; Li, Weiwei; Lai, Wenyong; Liu, Xiangmei; Wang, Lianhui; Huang, Wei; Dong, Xiaochen

    2013-08-01

    Graphical abstract: - Highlights: GrapheneZnO hybrid was synthesized by one-step electrochemical deposition. GrapheneZnO hybrid presents a special structure and wide UVvis absorption spectra. GrapheneZnO hybrid exhibits an exceptionally higher photocatalytic activity for the degradation of dye methylene blue. - Abstract: A grapheneZnO (G-ZnO) hybrid was synthesized by one-step electrochemical deposition. During the formation of ZnO nanostructure by cathodic electrochemical deposition, the graphene oxide was electrochemically reduced to graphene simultaneously. Scanning electron microscope images, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectra, and UVvis absorption spectra indicate the resulting G-ZnO hybrid presents a special structure and wide UVvis absorption spectra. More importantly, it exhibits an exceptionally higher photocatalytic activity for the degradation of dye methylene blue than that of pure ZnO nanostructure under both ultraviolet and sunlight irradiation.

  12. Classification of Lattice Defects in the Kesterite Cu2ZnSnS4...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Classification of Lattice Defects in the Kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 Earth-Abundant Solar Cell Absorbers Citation Details In-Document Search Title: ...

  13. Phases in the Al-Yb-Zn system between 25 and 50 at% ytterbium...

    Office of Scientific and Technical Information (OSTI)

    the Al-Yb-Zn system between 25 and 50 at% ytterbium Citation Details In-Document Search Title: Phases in the Al-Yb-Zn system between 25 and 50 at% ytterbium Phases YbZnsub ...

  14. Structure of graphene oxide dispersed with ZnO nanoparticles

    SciTech Connect (OSTI)

    Yadav, Rishikesh Pandey, Devendra K.; Khare, P. S.

    2014-10-15

    Graphene has been proposed as a promising two-dimensional nanomaterial with outstanding electronic, optical, thermal and mechanical properties for many applications. In present work a process of dispersion of graphene oxide with ZnO nanoparticles in ethanol solution with different pH values, have been studied. Samples have been characterized by XRD, SEM, PL, UV-visible spectroscopy and particles size measurement. The results analysis indicates overall improved emission spectrum. It has been observed that the average diameter of RGO (Reduced Graphene Oxide) decreases in presence of ZnO nanoparticles from 3.8?m to 0.41?m.

  15. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  16. Gd{sup 3+} incorporated ZnO nanoparticles: A versatile material

    SciTech Connect (OSTI)

    Kumar, Surender Sahare, P.D.

    2014-03-01

    Graphical abstract: - Highlights: • Chemically synthesized Gd{sup 3+} doped ZnO nanoparticles. • The broad visible emission of the ZnO is dependent on the surface defects and can be tailored by Gd{sup 3+} doing. • PL and magnetic properties are modified by Gd{sup 3+} doping. • Photocatalysis experiment reveals that the ZnO: Gd{sup 3+} degrades the Rh B dye faster than the undoped ZnO. - Abstract: Gd{sup 3+} doped ZnO nanoparticles are synthesized by wet chemical route method and investigated through structural, optical, magnetic and photocatalytic properties. Transmission Electron Microscopy technique has been performed on undoped and Gd{sup 3+} doped ZnO nanoparticles. X-ray diffraction, X-ray photoelectron spectroscopy and Raman analyses are carried out in order to examine the desired phase formation and substitution of Gd{sup 3+} in the ZnO matrix. Gd{sup 3+} doped ZnO nanoparticles show enhanced photoluminescent and ferromagnetic properties as compared to undoped ZnO. The broad visible emission of ZnO is found to be largely dependent on the surface defects and these surface defects can be tailored by Gd{sup 3+} doping concentration. Furthermore, Gd{sup 3+} doped ZnO nanoparticles also show improved photocatalytic properties as compared with undoped ZnO nanoparticles under ultraviolet irradiation.

  17. Photoinduced reduction of surface states in Fe:ZnO

    SciTech Connect (OSTI)

    Knut, R. Palmgren, P.; Karis, O.; Lagerqvist, U.; Pohl, A.; Pal, P.; Svedlindh, P.

    2015-05-28

    We report on the electronic structure of nano-crystalline Fe:ZnO, which has recently been found to be an efficient photocatalyst. Using resonant photoemission spectroscopy, we determine the binding energy of Fe 3d states corresponding to different valencies and coordination of the Fe atoms. The photo-activity of ZnO reduces Fe from 3+ to 2+ in the surface region of the nano-crystalline material due to the formation of oxygen vacancies. Electronic states corresponding to low-spin Fe{sup 2+} are observed and attributed to crystal field modification at the surface. These states are potentially important for the photocatalytic sensitivity to visible light due to their location deep in the ZnO bandgap. X-ray absorption and x-ray photoemission spectroscopy suggest that Fe is only homogeneously distributed for concentrations up to 3%. Increased concentrations does not result in a higher concentration of Fe ions in the surface region. This is limiting the photocatalytic functionality of ZnO, where the most efficient Fe doping concentration has been shown to be 1%-4%.

  18. Self-focused ZnO transducers for ultrasonic biomicroscopy

    SciTech Connect (OSTI)

    Cannata, J. M.; Williams, J. A.; Zhou, Q. F.; Sun, L.; Shung, K. K.; Yu, H.; Kim, E. S.

    2008-04-15

    A simple fabrication technique was developed to produce high frequency (100 MHz) self-focused single element transducers with sputtered zinc oxide (ZnO) crystal films. This technique requires the sputtering of a ZnO film directly onto a curved backing substrate. Transducers were fabricated by sputtering an 18 {mu}m thick ZnO layer on 2 mm diameter aluminum rods with ends shaped and polished to produce a 2 mm focus or f-number equal to one. The aluminum rod served a dual purpose as the backing layer and positive electrode for the resultant transducers. A 4 {mu}m Parylene matching layer was deposited on the transducers after housing and interconnect. This matching layer was used to protect the substrate and condition the transfer of acoustic energy between the ZnO film and the load medium. The pulse-echo response for a representative transducer was centered at 101 MHz with a -6 dB bandwidth of 49%. The measured two way insertion loss was 44 dB. A tungsten wire phantom and an adult zebrafish eye were imaged to show the capability of these transducers.

  19. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    SciTech Connect (OSTI)

    Miami University: Dr. Lei L. Kerr Wright State University: Dr. David C. Look and Dr. Zhaoqiang Fang

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  20. Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate

    SciTech Connect (OSTI)

    Xiang Wei

    2006-08-09

    This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in

  1. Zn-Site Determination in Protein Encapsulated ZnxFe3-xO4 Nanoparticles

    SciTech Connect (OSTI)

    Pool, V. L.; Klem, M. T.; Holroyd, J.; Harris, T.; Arenholz, E.; Young, M.; Douglas, T.; Idzerda, Y. U.

    2008-10-01

    The X-ray absorption spectra of the Fe and Zn L-edges for 6.7 nm Fe{sub 3}O{sub 4} nanoparticles grown inside 12 nm ferritin protein cages with 10%, 15%, 20% and 33% zinc doping, shows that the Zn is substitutional as Zn{sup 2+} within the iron oxide host structure. A Neel-Arrhenius plot of the blocking temperature in the frequency dependent ac-susceptibility measurements show that the particles are non-interacting and that the anisotropy energy barrier is reduced with Zn loading. X-ray magnetic circular dichroism (XMCD) of the Fe displays a linear decrease with Zn-doping in sharp contrast to the initial increase present in the bulk system. The most plausible explanation for the moment decrease is that Zn substitutes preferentially into the tetrahedral A-site as a Zn{sup 2+} cation, generating a mixed spinel.

  2. Theoretical study of syngas hydrogenation to methanol on the polar Zn-terminated ZnO(0001) surface

    SciTech Connect (OSTI)

    Zhao, Ya-Fan; Rousseau, Roger J.; Li, Jun; Mei, Donghai

    2012-08-02

    Methanol synthesis from syngas (CO/CO2/H2) hydrogenation on the perfect Znterminated polar ZnO(0001) surface have been investigated using periodic density functional theory calculations. Our results show that direct CO2 hydrogenation to methanol on the perfect ZnO(0001) surface is unlikely because in the presence of surface atomic H and O the highly stable formate (HCOO) and carbonate (CO3) readily produced from CO2 with low barriers 0.11 and 0.09 eV will eventually accumulate and block the active sites of the ZnO(0001) surface. In contrast, methanol synthesis from CO hydrogenation is thermodynamically and kinetically feasible on the perfect ZnO(0001) surface. CO can be consecutively hydrogenated into formyl (HCO), formaldehyde (H2CO), methoxy (H3CO) intermediates, leading to the final formation of methanol (H3COH). The reaction route via hydroxymethyl (H2COH) intermediate, a previously proposed species on the defected Oterminated ZnO( ) surface, is kinetically inhibited on the perfect ZnO(0001) surface. The rate-determining step in the consecutive CO hydrogenation route is the hydrogenation of H3CO to H3COH. We also note that this last hydrogenation step is pronouncedly facilitated in the presence of water by lowering the activation barrier from 1.02 to 0.55 eV. This work was supported by the U.S. Department of Energy Office of Basic Energy Sciences, Division of Chemical Sciences, Biosciences and Geosciences, and performed at EMSL, a national scientific user facility sponsored by the Department of Energys Office of Biological and Environmental Research located at Pacific Northwest National Laboratory (PNNL). Computational resources were provided at EMSL and the National Energy Research Scientific Computing Center at Lawrence Berkeley National Laboratory. J. Li and Y.-F. Zhao were also financially supported by the National Natural Science Foundation of China (Nos. 20933003 and 91026003) and the National Basic Research Program of China (No. 2011CB932400). Y

  3. Local structures of polar wurtzites Zn1-xMgxO studied by raman and 67Zn/25Mg NMR spectroscopies and by total neutron scattering

    SciTech Connect (OSTI)

    Proffen, Thomas E; Kim, Yiung- Il; Cadars, Sylvian; Shayib, Ramzy; Feigerle, Charles S; Chmelka, Bradley F; Seshadri, Ram

    2008-01-01

    Research in the area of polar semiconductor heterostructures has been growing rapidly, driven in large part by interest in two-dimensional electron gas (2DEG) systems. 2DEGs are known to form at heterojunction interfaces that bear polarization gradients. They can display extremely high electron mobilities, especially at low temperatures, owing to spatial confinement of carrier motions. Recent reports of 2DEG behaviors in Ga{sub 1-x}Al{sub x}N/GaN and Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have great significance for the development of quantum Hall devices and novel high-electron-mobility transistors (HEMTs). 2DEG structures are usually designed by interfacing a polar semiconductor with its less or more polar alloys in an epitaxial manner. Since the quality of the 2DEG depends critically on interface perfection, as well as the polarization gradient at the heterojunction, understanding compositional and structural details of the parent and alloy semiconductors is an important component in 2DEG design and fabrication. Zn{sub 1-x}Mg{sub x}O/ZnO is one of the most promising heterostructure types for studies of 2DEGs, due to the large polarization of ZnO, the relatively small lattice mismatch, and the large conduction band offsets in the Zn{sub 1-x}Mg{sub x}O/ZnO heterointerface. Although 2DEG formation in Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have been researched for some time, a clear understanding of the alloy structure of Zn{sub 1-x}Mg{sub x}O is currently lacking. Here, we conduct a detailed and more precise study of the local structure of Zn{sub 1-x}Mg{sub x}O alloys using Raman and solid-state nuclear magnetic resonance (NMR), in conjunction with neutron diffraction techniques.

  4. Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping

    SciTech Connect (OSTI)

    Xiao, Qi Wang, Tao

    2013-08-01

    Graphical abstract: - Highlights: • Co-doped porous ZnO microspheres were synthesized. • 3 mol% Co-doped ZnO sensor showed the highest response to ethanol. • 3 mol% Co-doped ZnO sensor exhibited fast recovery property. • 3 mol% Co-doped ZnO sensor exhibited good selectivity and long-term stability. - Abstract: Porous Co-doped ZnO microspheres were prepared by a simple hydrothermal method combined with post-annealing. Co species existed as a form of divalent state in the sample and substituted Zn{sup 2+} sites in ZnO crystal lattice, which was affirmed by X-ray diffraction, UV–vis diffuse reflectance spectroscopy and X-ray photoelectron spectroscopy. The gas-sensing measurements demonstrated that the 3 mol% Co-doped ZnO sample showed the highest response value to 100 ppm ethanol at 350 °C, which were 5 folds higher than that of the pure ZnO sample. In addition, the 3 mol% Co-doped ZnO sensor exhibited fast recovery property, good quantitative determination, good selectivity and long-term stability. The superior sensing properties were contributed to high specific surface area combined with the large amount of oxygen vacancies originating from Co doping.

  5. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    SciTech Connect (OSTI)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-30

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  6. Molecular dynamics simulation of annealed ZnO surfaces

    SciTech Connect (OSTI)

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

  7. Field emission properties of ZnO nanosheet arrays

    SciTech Connect (OSTI)

    Naik, Kusha Kumar; Rout, Chandra Sekhar E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in; Khare, Ruchita; More, Mahendra A.; Chakravarty, Disha; Late, Dattatray J. E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in; Thapa, Ranjit E-mail: dj.late@ncl.res.in E-mail: csrout@iitbbs.ac.in

    2014-12-08

    Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm{sup 2} and current density of 50.1 μA/cm{sup 2} at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

  8. Coulomb Excitation of the N = 50 nucleus {sup 80}Zn

    SciTech Connect (OSTI)

    Van de Walle, J.; Cocolios, T. E.; Huyse, M.; Ivanov, O.; Mayet, P.; Raabe, R.; Sawicka, M.; Stefanescu, I.; Duppen, P. van; Aksouh, F.; Behrens, T.; Gernhauser, R.; Kroell, T.; Kruecken, R.; Bildstein, V.; Blazhev, A.; Eberth, J.

    2008-05-12

    Neutron rich Zinc isotopes, including the N = 50 nucleus {sup 80}Zn, were produced and post-accelerated at the Radioactive Ion Beam (RIB) facility REX-ISOLDE (CERN). Low-energy Coulomb excitation was induced on these isotopes after post-acceleration, yielding B(E2) strengths to the first excited 2{sup +} states. For the first time, an excited state in {sup 80}Zn was observed and the 2{sub 1}{sup +} state in {sup 78}Zn was established. The measured B(E2,2{sub 1}{sup +}{yields}0{sub 1}{sup +}) values are compared to two sets of large scale shell model calculations. Both calculations reproduce the observed B(E2) systematics for the full Zinc isotopic chain. The results for N = 50 isotones indicate a good N = 50 shell closure and a strong Z = 28 proton core polarization. The new results serve as benchmarks to establish theoretical models, predicting the nuclear properties of the doubly magic nucleus {sup 78}Ni.

  9. Enhanced photocatalytic performance of Ga{sup 3+}-doped ZnO

    SciTech Connect (OSTI)

    Zhong, Jun Bo; Li, Jian Zhang; Zeng, Jun; He, Xi Yang; Hu, Wei; Shen, Yue Cheng

    2012-11-15

    Graphical abstract: In general, the strong SPS response corresponds to the high separation rate of photoinduced charge carriers on the basis of the SPS principle. The photovoltage of Ga{sup 3+}-doped ZnO is higher than that of ZnO, thus it can be confirmed that the Ga{sup 3+}-doped ZnO has a higher charge separation rate than the ZnO sample. Among these samples, 1%Ga has highest charge separation rate. Display Omitted Highlights: ► Ga{sup 3+} has been employed to dope ZnO photocatalyst. ► Ga{sup 3+} increases the BET surface area and changes the morphology of ZnO. ► The photoinduced charge separation rate has been enhanced. ► The photocatalytic activity has been greatly promoted. -- Abstract: ZnO and Ga{sup 3+}-doped ZnO with different molar ratio of Ga/Zn (1%, 2% and 3%) were prepared by a parallel flow precipitation method. The photocatalysts prepared were characterized by BET surface area, X-ray diffraction (XRD), UV/vis diffuse reflectance spectroscopy (DRS), scanning electron microscope (SEM) and surface photovoltage spectroscopy (SPS), respectively. The results show that doping Ga{sup 3+} into ZnO increases the BET surface area. The XRD spectra of the photocatalysts calcined at 573 K show only the characteristic peaks of wurtzite-type. Ga{sup 3+}-doped ZnO absorbs much more light than ZnO in the visible light region. Doping Ga{sup 3+} into ZnO greatly changes the morphology of ZnO and enhances the photoinduced charge separation rate. The photocatalytic activity of ZnO and Ga{sup 3+}-doped ZnO for decolorization of methyl orange (MO) solution was evaluated, of all the photocatalysts prepared, the Ga{sup 3+}-doped ZnO with 1% possesses the best photocatalytic activity and the possible reason was discussed.

  10. Impact of strain on electronic defects in (Mg,Zn)O thin films

    SciTech Connect (OSTI)

    Schmidt, Florian Müller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius

    2014-09-14

    We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

  11. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

    SciTech Connect (OSTI)

    Chen, Shuming Wang, Sisi

    2014-12-01

    Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.

  12. Magnetism in undoped ZnS studied from density functional theory

    SciTech Connect (OSTI)

    Xiao, Wen-Zhi E-mail: llwang@hun.edu.cn; Rong, Qing-Yan; Xiao, Gang; Wang, Ling-ling E-mail: llwang@hun.edu.cn; Meng, Bo

    2014-06-07

    The magnetic property induced by the native defects in ZnS bulk, thin film, and quantum dots are investigated comprehensively based on density functional theory within the generalized gradient approximation + Hubbard U (GGA?+?U) approach. We find the origin of magnetism is closely related to the introduction of hole into ZnS systems. The relative localization of S-3p orbitals is another key to resulting in unpaired p-electron, due to Hund's rule. For almost all the ZnS systems under study, the magnetic moment arises from the S-dangling bonds generated by Zn vacancies. The charge-neutral Zn vacancy, Zn vacancy in 1? charge sate, and S vacancy in the 1+ charge sate produce a local magnetic moment of 2.0, 1.0, and 1.0??{sub B}, respectively. The Zn vacancy in the neutral and 1? charge sates are the important cause for the ferromagnetism in ZnS bulk, with a Curie temperature (T{sub C}) above room temperature. For ZnS thin film with clean (111) surfaces, the spins on each surface are ferromagnetically coupled but antiferromagnetically coupled between two surfaces, which is attributable to the internal electric field between the two polar (111) surfaces of the thin film. Only surface Zn vacancies can yield local magnetic moment for ZnS thin film and quantum dot, which is ascribed to the surface effect. Interactions between magnetic moments on S-3p states induced by hole-doping are responsible for the ferromagnetism observed experimentally in various ZnS samples.

  13. Nucleation and Growth of Electrodeposited ZnO Visualized by in-Situ X-ray

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Microscopy | Stanford Synchrotron Radiation Lightsource Nucleation and Growth of Electrodeposited ZnO Visualized by in-Situ X-ray Microscopy Thursday, June 30, 2016 Electrodeposition (ED) of ZnO has been widely used to deposit transparent conducting films for optoelectronic applications. The film quality, and consequently the performance of the film, is highly dependent on both the nucleation and growth of ZnO. Current studies employ ex-situ experiments where the film is deposited, dried,

  14. Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic Hybrid Thermoelectrics Demonstrates self-catalytic schemes for large-scale synthesis of compound semiconductor ...

  15. Green synthesis of graphene nanosheets/ZnO composites and electrochemical properties

    SciTech Connect (OSTI)

    Wang Jun; Gao Zan; Li Zhanshuang; Wang Bin; Yan Yanxia; Liu Qi; Mann, Tom; Zhang Milin; Jiang Zhaohua

    2011-06-15

    A green and facile approach was demonstrated to prepare graphene nanosheets/ZnO (GNS/ZnO) composites for supercapacitor materials. Glucose, as a reducing agent, and exfoliated graphite oxide (GO), as precursor, were used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials. The small ZnO particles successfully anchored onto graphene sheets as spacers to keep the neighboring sheets separate. The electrochemical performances of these electrodes were analyzed by cyclic voltammetry, electrochemical impedance spectrometry and chronopotentiometry. Results showed that the GNS/ZnO composites displayed superior capacitive performance with large capacitance (62.2 F/g), excellent cyclic performance, and maximum power density (8.1 kW/kg) as compared with pure graphene electrodes. Our investigation highlight the importance of anchoring of small ZnO particles on graphene sheets for maximum utilization of electrochemically active ZnO and graphene for energy storage application in supercapacitors. - Graphical abstract: Glucose was used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials for supercapacitor. Results showed that the composites have superior capacitive performance. Highlights: > Graphene nanosheets were synthesized via using glucose as a reducing agent. > The reductant and the oxidized product are environmentally friendly. > ZnO grew onto conducting graphene sheets keeping neighboring sheets separate. > The structure improves the contact between the electrode and the electrolyte. > Results showed that these composites have good electrochemical property.

  16. Transport and magnetotransport study of Mg doped ZnO thin films

    SciTech Connect (OSTI)

    Agrawal, Arpana; Dar, Tanveer A. Sen, Pratima; Phase, Deodatta M.

    2014-04-14

    We report negative magnetoresistance in pulsed laser deposited single phase ZnO and Mg{sub 0.268}Zn{sub 0.732}O films and attribute it to the presence of oxygen interstitials (O{sub i}) and zinc interstitials (Zn{sub i}) as observed in the X-ray photoelectron spectra of the films. An interesting feature of reduction of negative magnetoresistance at low temperatures and large fields in Mg{sub 0.268}Zn{sub 0.732}O film is observed and is explained by taking into account the localized scattering.

  17. Visible light photocatalytic property of Zn doped V{sub 2}O{sub 5} nanoparticles

    SciTech Connect (OSTI)

    Suresh, R.; Giribabu, K.; Vijayalakshmi, L.; Stephen, A.; Narayanan, V.

    2012-06-05

    The Zn doped V{sub 2}O{sub 5} nanoparticles were synthesized by thermal decomposition method. The prepared samples were characterized by various techniques like Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) studies, UV-Visible spectroscopy (UV-Vis) and field emission scanning electron microscopy (FE-SEM). The photocatalytic activities of pure and Zn doped V{sub 2}O{sub 5} nanoparticles were examined based on the photodegradation of Rhodamine B (RhB). Experimental results indicated that the Zn doped V{sub 2}O{sub 5} photocatalyst (the molar ratio of V to Zn is 99: 1) exhibited maximum photocatalytic activity.

  18. Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement

    SciTech Connect (OSTI)

    Sharma, Vinay, E-mail: winn201@gmail.com; Rajaura, Rajveer Singh, E-mail: winn201@gmail.com [Centre for Converging Technologies, University of Rajasthan, Jaipur - 302004 (India); Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K. [Department of Physics, Thin Film and Membrane Science Lab., University of Rajasthan, Jaipur - 302004 (India); Sharma, S. S. [Department of Physics, Govt. Women Engineering College, Ajmer- 305002 (India)

    2014-04-24

    Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

  19. Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

    SciTech Connect (OSTI)

    Gu, Tingkun

    2014-05-28

    The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab.

  20. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect (OSTI)

    Kovacs, Andras; Ney, A.; Duchamp, Martial; Ney, V.; Boothroyd, Chris; Galindo, Pedro L.; Kaspar, Tiffany C.; Chambers, Scott A.; Dunin-Borkowski, Rafal

    2013-12-23

    We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

  1. Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radiation Lightsource Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films

  2. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect (OSTI)

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  3. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect (OSTI)

    G, Sreeja V; Anila, E. I. R, Reshmi John, Manu Punnan; V, Sabitha P; Radhakrishnan, P.

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  4. Distinct water activation on polar/non-polar facets of ZnO nanoparticl...

    Office of Scientific and Technical Information (OSTI)

    Distinct water activation on polarnon-polar facets of ZnO nanoparticles This content will become publicly available on September 14, 2017 Title: Distinct water activation on ...

  5. A Novel and Functional Single Layer Sheet of ZnSe (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    A Novel and Functional Single Layer Sheet of ZnSe Citation ... In this Communication, we report a novel singlelayer sheet ... Type: Accepted Manuscript Journal Name: ACS Applied ...

  6. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    SciTech Connect (OSTI)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-05-15

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter {approx} 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: Black-Right-Pointing-Pointer The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. Black-Right-Pointing-Pointer ZnO and Ni doped ZnO nanorods Black-Right-Pointing-Pointer Ferromagnetism at room temperature.

  7. Controlled fabrication and tunable photoluminescence properties of Mn{sup 2+} doped grapheneZnO composite

    SciTech Connect (OSTI)

    Luan, Xinglong; Zhang, Yihe Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

    2014-11-15

    Highlights: GrapheneZnO composites were synthesized by a mixed solvothermal method. ZnO quantum dots are distributed uniformly on the graphene sheets. A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. Mn{sup 2+} doped grapheneZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: GrapheneZnO composites (GZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize GZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn{sup 2+} ions dopes GZnO successfully by the mixed solvothermal synthesis and the doping of Mn{sup 2+} makes GZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn{sup 2+} make GZnO have tunable photoluminescence spectrum which is desirable for practical applications.

  8. Structural Stability and Defect Energetics of ZnO from Diffusion Quantum Monte Carlo

    SciTech Connect (OSTI)

    Santana Palacio, Juan A.; Krogel, Jaron T.; Kim, Jeongnim; Kent, Paul R.; Reboredo, Fernando A.

    2015-04-28

    We have applied the many-body ab-initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure, and the energetics of the oxygen vacancy, zinc interstitial and hydrogen impurities in ZnO. We show that DMC is an accurate and practical method that can be used to characterize multiple properties of materials that are challenging for density functional theory approximations. DMC agrees with experimental measurements to within 0.3 eV, including the band-gap of ZnO, the ionization potential of O and Zn, and the atomization energy of O2, ZnO dimer, and wurtzite ZnO. DMC predicts the oxygen vacancy as a deep donor with a formation energy of 5.0(2) eV under O-rich conditions and thermodynamic transition levels located between 1.8 and 2.5 eV from the valence band maximum. Our DMC results indicate that the concentration of zinc interstitial and hydrogen impurities in ZnO should be low under n-type, and Zn- and H-rich conditions because these defects have formation energies above 1.4 eV under these conditions. Comparison of DMC and hybrid functionals shows that these DFT approximations can be parameterized to yield a general correct qualitative description of ZnO. However, the formation energy of defects in ZnO evaluated with DMC and hybrid functionals can differ by more than 0.5 eV.

  9. Structural Stability and Defect Energetics of ZnO from Diffusion Quantum Monte Carlo

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Santana Palacio, Juan A.; Krogel, Jaron T.; Kim, Jeongnim; Kent, Paul R.; Reboredo, Fernando A.

    2015-04-28

    We have applied the many-body ab-initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure, and the energetics of the oxygen vacancy, zinc interstitial and hydrogen impurities in ZnO. We show that DMC is an accurate and practical method that can be used to characterize multiple properties of materials that are challenging for density functional theory approximations. DMC agrees with experimental measurements to within 0.3 eV, including the band-gap of ZnO, the ionization potential of O and Zn, and the atomization energy of O2, ZnO dimer, and wurtzite ZnO. DMC predicts the oxygen vacancy asmore » a deep donor with a formation energy of 5.0(2) eV under O-rich conditions and thermodynamic transition levels located between 1.8 and 2.5 eV from the valence band maximum. Our DMC results indicate that the concentration of zinc interstitial and hydrogen impurities in ZnO should be low under n-type, and Zn- and H-rich conditions because these defects have formation energies above 1.4 eV under these conditions. Comparison of DMC and hybrid functionals shows that these DFT approximations can be parameterized to yield a general correct qualitative description of ZnO. However, the formation energy of defects in ZnO evaluated with DMC and hybrid functionals can differ by more than 0.5 eV.« less

  10. Structural Phase Transition in AuZn Alloys

    SciTech Connect (OSTI)

    Winn,B.L.; Shapiro, S.M.; Lashley, J.C.; Opeil, C.; Ratcliff, W.

    2009-05-03

    AuxZn1-x alloys undergo a shape memory martensitic transformation whose temperature and nature (continuous or discontinuous) is strongly composition dependent. Neutron diffraction experiments were performed on single crystals of x=50 and 52 to explore the structural changes occurring at the transition temperature. A transverse modulation with wavevector q0=(1/3,1/3,0) develops below the transition temperature, with no observable change in lattice parameter. However, the Bragg peak width shows a broadening suggesting an unresolved rhombohedral distortion similar to what has been observed in NiTi-Fe alloys.

  11. Fine structure on the green band in ZnO

    SciTech Connect (OSTI)

    Reynolds, D. C.; Look, D. C.; Jogai, B.

    2001-06-01

    An emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no matter what growth technique is used. Sometimes this band includes fine structure, which consists mainly of doublets, repeated with a longitudinal-optical-phonon-energy spacing (72 meV). We have developed a vibronic model for the green band, based on transitions from two separate shallow donors to a deep acceptor. The donors, at energies 30 and 60 meV from the conduction-band edge, respectively, are also found from Hall-effect measurements. {copyright} 2001 American Institute of Physics.

  12. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect (OSTI)

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  13. Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

    SciTech Connect (OSTI)

    Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; Bahr, David F.

    2015-03-28

    The mechanical properties, thermal stability, and electrical performance of AuZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanical softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 12% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 n?-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardnessresistivity relationship that is relatively independent of the particular ODS chemistry.

  14. Hierarchical Ag/ZnO micro/nanostructure: Green synthesis and enhanced photocatalytic performance

    SciTech Connect (OSTI)

    Gao, Shuyan; Jia, Xiaoxia; Yang, Shuxia; Li, Zhengdao; Jiang, Kai

    2011-04-15

    Ag/ZnO metal-semiconductor nanocomposites with hierarchical micro/nanostructure have been prepared by the hydrothermal synthesis in the presence of bovine serum albumin (BSA). The results suggest that this biomolecule-assisted hydrothermal method is an efficient route for the fabrication of Ag/ZnO nanocomposites by using BSA both a shape controller and a reducing agent of Ag{sup +} ions. Moreover, Ag nanoparticles on the ZnO act as electron sinks, improving the separation of photogenerated electrons and holes, increasing the surface hydroxyl contents of ZnO, facilitating trapping the photoinduced electrons and holes to form more active hydroxyl radicals, and thus, enhancing the photocatalytic efficiency of ZnO. This is a good example for the organic combination of green chemistry and functional materials. -- Graphical Abstract: A green strategy is report to construct Ag/ZnO metal-semiconductor nanocomposites with hierarchical micro/nanostructure and enhanced photocatalytic activity. Display Omitted Research highlights: > Hierarchical micro/nanostructured Ag/ZnO nanocomposites have been prepared via a green route. > Ag nanoparticles improve the separation of photogenerated electrons and holes. > This facilitates trapping the photoinduced electrons and holes to form more hydroxyl radicals. Therefore, it enhances the photocatalytic efficiency of ZnO.

  15. Band-gap tailoring of ZnO by means of heavy Al doping

    SciTech Connect (OSTI)

    Sernelius, B.E.; Berggren, K.; Jin, Z.; Hamberg, I.; Granqvist, C.G.

    1988-06-15

    Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

  16. Magnetic and structural properties of Zn doped MnV{sub 2}O{sub 4}

    SciTech Connect (OSTI)

    Shahi, Prashant; Shukla, K. K.; Singh, Rahul; Chatterjee, Sandip; Das, A.; Ghosh, A. K.; Nigam, A. K.

    2014-04-24

    The magnetization, Neutron diffraction and X-ray diffraction of Zn doped MnV{sub 2}O{sub 4} as a function of temperature have been measured. It has been observed, with increase of Zn the non-linear orientation of Mn spins with the V spins will decrease which effectively decrease the structural transition temperature more rapidly than Curie Temperature.

  17. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  18. Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; Bahr, David F.

    2015-03-28

    The mechanical properties, thermal stability, and electrical performance of Au–ZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 °C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanicalmore » softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 1–2% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 nΩ-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardness–resistivity relationship that is relatively independent of the particular ODS chemistry.« less

  19. Optical characteristics of ZnO single crystal grown by the hydrothermal method

    SciTech Connect (OSTI)

    Chen, G. Z.; Yin, J. G. E-mail: yjg@siom.ac.cn; Zhang, L. H.; Zhang, P. X.; Wang, X. Y.; Liu, Y. C.; Zhang, C. L.; Gu, S. L.; Hang, Y.

    2015-12-15

    ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different ambient gases. It is suggested that the green emission may originate from defects related to copper in our samples.

  20. Ethanol Steam Reforming on Co/CeO2: The Effect of ZnO Promoter...

    Office of Scientific and Technical Information (OSTI)

    Ethanol Steam Reforming on CoCeO2: The Effect of ZnO Promoter Citation Details In-Document Search Title: Ethanol Steam Reforming on CoCeO2: The Effect of ZnO Promoter A series of ...

  1. Mid-Gap Electronic States in Zn1 xMnxO

    SciTech Connect (OSTI)

    Johnson, Claire A.; Kittilstved, Kevin R.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2010-09-02

    Electronic absorption, magnetic circular dichroism, photoconductivity, and valence-band X-ray photoelectron (XPS) spectroscopic measurements were performed on epitaxial Zn1 xMnxO films to investigate the origin of the new mid-gap band that appears upon introduction of Mn2+ into the ZnO lattice. Absorption and MCD spectroscopies reveal Mn2+-related intensity at energies below the first excitonic transition of ZnO, tailing well into the visible energy region, with an onset at ~2.2 eV. Photoconductivity measurements show that excitation into this visible band generates mobile charge carriers, consistent with assignment as a Mn2+/3+ photoionization transition. XPS measurements reveal the presence of occupied Mn2+ levels just above the valence-band edge, supporting this assignment. Magnetic circular dichroism measurements additionally show a change in sign and large increase in magnitude of the excitonic Zeeman splitting in Zn1 xMnxO relative to ZnO, suggesting that sp-d exchange in Zn1 xMnxO is not as qualitatively different from those in other II-VI diluted magnetic semiconductors as has been suggested. The singular electronic structure feature of Zn1 xMnxO is its Mn2+/3+ ionization level within the gap, and the influence of this level on other physical properties of Zn1 xMnxO is discussed.

  2. Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

    SciTech Connect (OSTI)

    Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; Bahr, David F.

    2015-03-28

    The mechanical properties, thermal stability, and electrical performance of Au–ZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 °C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanical softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 1–2% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 nΩ-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardness–resistivity relationship that is relatively independent of the particular ODS chemistry.

  3. Degradation of ZnO Window Layer for CIGS by Damp-Heat Exposure: Preprint

    SciTech Connect (OSTI)

    Pern, F.J.; To, B.; DeHart, C.; Li, X.; Glick, S. H.; Noufi, R.

    2008-08-01

    This paper summarizes our work with more details and an emphasis on the DH-induced degradation of Al-doped ZnO and Zn1-xMgxO alloys. The other two TCOs, ITO and F:SnO2, are not included here.

  4. SrAgZn and EuAgZn with KHg{sub 2}-type structure—Structure, magnetic properties, and {sup 151}Eu Mössbauer spectroscopy

    SciTech Connect (OSTI)

    Gerke, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver; Pöttgen, Rainer

    2013-07-15

    Samples of SrAgZn and EuAgZn were synthesized by reaction of the elements in sealed tantalum crucibles. Both structures were refined on the basis of single crystal X-ray diffractometer data: KHg{sub 2}-type, Imma, a=476.7(1), b=780.9(2), c=810.1(2) pm, R{sub 1}/wR{sub 2}=0.0189/0.0119, 381 F² values for SrAg{sub 1.12}Zn{sub 0.88} and a=474.43(9), b=760.8(2), c=799.0(2) pm, R{sub 1}/wR{sub 2}=0.0226/0.0483, 370 F² values for EuAg{sub 1.17}Zn{sub 0.83} with 13 variables per refinement. Silver and zinc are randomly distributed on the Hg position and build up three-dimensional networks. EuAgZn shows ferromagnetic ordering at 29(1) K. In the temperature range from 75 to 300 K the sample shows Curie–Weiss behaviour with μ{sub eff}=7.87(1) μ{sub B}/Eu atom and θ{sub P}=37.1(1) K, indicating divalent europium. {sup 151}Eu Mössbauer spectroscopic measurements confirmed the divalent state with an isomer shift of −9.31 mm/s at 78 K. Temperature dependent {sup 151}Eu data show first magnetic hyperfine field splitting at 25 K and a saturated magnetization of 17 T at 5.2 K. The temperature dependence can be described by an S=7/2 Brillouin function. - Graphical abstract: The near neighbor coordination of the strontium and europium atoms in SrAg{sub 1.12}Zn{sub 0.88}, EuAg{sub 1.17}Zn{sub 0.83}, and EuAuZn. - Highlights: • Synthesis of new intermetallic zinc compounds SrAgZn and EuAgZn. • Ferromagnetic ordering of EuAgZn at 29 K. • Magnetic hyperfine field splitting in the {sup 151}Eu Mössbauer spectrum.

  5. Hydrothermal synthesis of coral-like Au/ZnO catalyst and photocatalytic degradation of Orange II dye

    SciTech Connect (OSTI)

    Chen, P.K.; Lee, G.J.; Davies, S.H.; Masten, S.J.; Amutha, R.; Wu, J.J.

    2013-06-01

    Highlights: ? Coral-like Au/ZnO was successfully prepared using green synthetic method. ? Gold nanoparticles were deposited on the ZnO structure using NaBH{sub 4} and ?-D-glucose. ? Coral-like Au/ZnO exhibited superior photocatalytic activity to degrade Orange II. - Abstract: A porous coral-like zinc oxide (c-ZnO) photocatalyst was synthesized by the hydrothermal method. The coral-like structure was obtained by precipitating Zn{sub 4}(CO{sub 3})(OH){sub 6}H{sub 2}O (ZnCH), which forms nanosheets that aggregate together to form microspheres with the coral-like structure. X-ray diffraction (XRD) studies indicate that after heating at 550 C the ZnCH microspheres can be converted to ZnO microspheres with a morphology similar to that of ZnCH microspheres. Thermogravimetric analysis (TGA) shows this conversion takes place at approximately 260 C. A simple electrostatic self-assembly method has been employed to uniformly disperse Au nanoparticles (1 wt.%) on the ZnO surface. In this procedure ?-D-glucose was used to stabilize the Au nanoparticles. Scanning electron microscope images indicate that the diameter of coral-like ZnO microspheres (c-ZnO) is about 8 ?m. X-ray diffraction reveals that the ZnO is highly crystalline with a wurtzite structure and the Au metallic particles have an average size of about 13 nm. X-ray photoelectron spectroscopic (XPS) studies have confirmed the presence of ZnO and also showed that the Au is present in the metallic state. The photocatalytic degradation of Orange II dye, with either ultraviolet or visible light, is faster on Au/c-ZnO than on c-ZnO.

  6. How the guest molecules in nanoporous Zn(II) metal-organic framework can prevent agglomeration of ZnO nanoparticles

    SciTech Connect (OSTI)

    Moeinian, Maryam; Akhbari, Kamran

    2015-05-15

    The host and the apohost framework of [Zn{sub 2}(BDC){sub 2}(H{sub 2}O){sub 2}·(DMF){sub 2}]{sub n} (1·2H{sub 2}O·2DMF), (BDC{sup 2−}=benzene-1,4-dicarboxylate and DMF=N,N-Dimethylformamide), were synthesized and subsequently used for preparation of ZnO nanomaterials. With calcination of the host framework of 1·2H{sub 2}O·2DMF, ZnO nanoparticles were obtained. By the same process on the apohost framework of 1, agglomerated nanoparticles of ZnO were formed. These nano-structures were characterized by X-ray powder diffraction (XRD) and Scanning electron microscopy (SEM). These results indicate that with removal of the guest DMF and coordinated H{sub 2}O molecules from the one-dimensional channels of 1·2H{sub 2}O·2DMF, the tendency of nanoparticles to agglomerate increases and the role of this MOF in preparation of ZnO nanoparticles from this precursor was reduced. - Graphical abstract: Nano-porous zinc(II) MOF with guest DMF and coordinated H{sub 2}O molecules has been synthesized and characterized. The host and the apohost framework of it were used for preparation of ZnO nanomaterials. The role of these species in preparation of ZnO nanoparticles from the host framework is probably similar to the role of polymeric stabilizers in formation of nanoparticles. - Highlights: • Nanoparticles of ZnO were fabricated from nanoporous metal-organic framework. • The effect of guest DMF and coordinated H{sub 2}O molecules on this process was studied. • The effect of them in formation nanoparticle is similar to polymeric stabilizers.

  7. Controlled etching of hexagonal ZnO architectures in an alcohol thermal process

    SciTech Connect (OSTI)

    Wu, Junshu [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China); Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

    2010-03-15

    An alcohol thermal technique was applied to the controlled growth of hexagonal ZnO architectures via selective chemical etching. ZnO microdisks were produced first under mild alcohol thermal conditions in presence of formamide. Due to a higher surface energy/atomic density of Zn{sup 2+} {l_brace}0 0 0 1{r_brace} than that of the other faces, hexagonal ZnO microring was obtained by selectively etching positive polar surface of disk-like precursor with a high density of planar defects at the center. The selective etching of ZnO is related to its crystallographic characteristics of surface polarity and chemical activities, which opens a new opportunity for the shape-controlled synthesis of wurtzite-structured materials.

  8. Atomic layer deposition of zinc sulfide with Zn(TMHD){sub 2}

    SciTech Connect (OSTI)

    Short, Andrew; Jewell, Leila; Doshay, Sage; Church, Carena; Keiber, Trevor; Bridges, Frank; Carter, Sue; Alers, Glenn

    2013-01-15

    The atomic layer deposition (ALD) of ZnS films with Zn(TMHD){sub 2} and in situ generated H{sub 2}S as precursors was investigated, over a temperature range of 150-375 Degree-Sign C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

  9. Polymer-ZnO nanocomposites foils and thin films for UV protection

    SciTech Connect (OSTI)

    Shanshool, Haider Mohammed; Yahaya, Muhammad; Abdullah, Ibtisam Yahya [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor (Malaysia); Yunus, Wan Mahmood Mat [Department of Physics, Faculty of Science, University Putra Malaysia, 43400 UPM, Serdang (Malaysia)

    2014-09-03

    The damage of UV radiation on human eye and skin is extensively studied. In the present work, the nanocomposites foils and thin films have been prepared by using casting method and spin coating, respectively. Nanocomposites were prepared by mixing ZnO nanoparticles with Polymethyl methacrylate (PMMA) and Polyvinylidene fluoride (PVDF) as polymer matrix. Different contents of ZnO nanoparticles were used as filler in the nanocomposites. UV-Vis spectra showed very low transmittance in UV region that decreases with increase content of ZnO. PVDF/ZnO samples showed the lowest transmittance. The rough surface of PVDF was observed from SEM image. While a homogeneous dispersion of ZnO nanoparticles in PMMA were indicated by FESEM images.

  10. Emission Properties from ZnO Quantum Dots Dispersed in SiO{sub 2} Matrix

    SciTech Connect (OSTI)

    Panigrahi, Shrabani; Basak, Durga

    2011-07-15

    Dispersion of ZnO quantum dots in SiO{sub 2} matrix has been achieved in two techniques based on StOeber method to form ZnO QDs-SiO{sub 2} nanocomposites. Sample A is formed with random dispersion by adding tetraethyl orthosilicate (TEOS) to an ethanolic solution of ZnO nanoparticles and sample B is formed with a chain-like ordered dispersion by adding ZnO nanoparticles to an already hydrolyzed ethanolic TEOS solution. The photoluminescence spectra of the as-grown nanocomposites show strong emission in the ultraviolet region. When annealed at higher temperature, depending on the sample type, these show strong red or white emission. Interestingly, when the excitation is removed, the orderly dispersed ZnO QDs-SiO{sub 2} composite shows a very bright blue fluorescence visible by naked eyes for few seconds indicating their promise for display applications.

  11. Defect-free ZnO nanorods for low temperature hydrogen sensor applications

    SciTech Connect (OSTI)

    Ranwa, Sapana; Kumar, Mahesh; Kulriya, Pawan K.; Sahu, Vikas Kumar; Kukreja, L. M.

    2014-11-24

    Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H{sub 2} sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (?21.6?s) and recovery times (?27?s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H{sub 2} sensor operates at low temperature (?70?C) unlike the existing high temperature (>150?C) sensors.

  12. Manipulation of exciton and photon lasing in a membrane-type ZnO microcavity

    SciTech Connect (OSTI)

    Lai, Ying-Yu; Chen, Jee-Wei; Chang, Tsu-Chi; Lu, Tien-Chang; Chou, Yu-Hsun

    2015-03-30

    We report on the fabrication and characterization of a membrane-type ZnO microcavity (MC). The ZnO membrane was cut from a single crystalline ZnO substrate by using focused ion beam milling, and was then placed onto a SiO{sub 2} substrate by using glass microtweezers. Through changing the pumping regime, manipulation of P-band exciton lasing and whispering-gallery mode (WGM) photon lasing could be easily achieved. P-band exciton lasing was observed only when the pumping laser was focused at the center of the ZnO MC with a small pumping size because of the innate ring-shaped WGM distribution. Furthermore, the lasing threshold of the ZnO MC could be reduced to an order lower by using a larger pumping spot because of the more favorable spatial overlap between the optical gain and WGM.

  13. Purification of CdZnTe by Electromigration

    SciTech Connect (OSTI)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  14. Purification of CdZnTe by Electromigration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  15. Laser induced effects on ZnO targets upon ablation at 266 and 308 nm wavelengths

    SciTech Connect (OSTI)

    Jadraque, Maria; Martin, Margarita; Domingo, Concepcion

    2008-07-15

    The development of structural changes in ZnO targets, upon laser irradiation at the wavelengths of 266 and 308 nm, is studied by Raman spectroscopy. At the wavelength of 308 nm, oxygen vacancies are found to develop monotonically with increasing laser intensity. At 266 nm, a structural change in the irradiated ZnO targets, possibly related to nanostructuring, is observed above the laser fluence of 0.45 J cm{sup -2}. The different natures of the laser target interaction processes taking place at both wavelengths are investigated through the characterization of the composition and energy distribution of the species ejected in the ablation. The energy of the neutral Zn and Zn{sub 2} present in the ablation at 308 nm shows a smooth dependence on laser fluence which is consistent with the observed smooth development of oxygen vacancies. At 266 nm, the average kinetic energy of the ejected fragments is higher than at 308 nm and changes abruptly with the ablating laser fluence, consistently with the presence of a fluence threshold above which structural transform is observed at this wavelength. The plume shows the same neutral composition (Zn, ZnO, and Zn{sub 2}) at both wavelengths but the dependence on fluence of the ratio of neutral atomic Zn to the dimer Zn{sub 2} shows significant differences. From the latter, different temperature regimes can be inferred in the plume generated at both wavelengths. At 266 nm the cationic composition of the plume is mainly stoichiometric whereas at 308 nm ZnO{sub 2(3)}H{sub 2(1)}{sup +} cations have the highest intensity.

  16. Plasmonic excitations in ZnO/Ag/ZnO multilayer systems: Insight into interface and bulk electronic properties

    SciTech Connect (OSTI)

    Philipp, Martin; Knupfer, Martin; Buechner, Bernd; Gerardin, Hadia

    2011-03-15

    Electron energy-loss spectroscopy experiments in transmission were carried out on silver-based multi-layer systems, consisting of a silver layer of various thicknesses (8, 10 and 50 nm) sandwiched between two Al-doped ZnO layers. The films were produced by magnetron sputtering using potassium bromide single crystals as substrates. The electronic structure of these systems was probed and analyzed with respect to their plasmonic excitations, which can be basically split up into excitations of the electrons in the bulk silver and excitations at the ZnO:Al/Ag interface. A detailed examination of the momentum dependence of the plasmon peaks revealed a positive dispersion for both, the volume and the interface plasmon, where only for the first one a quadratic behavior (as expected for a free electron gas) could be observed. Furthermore, the peak width was analyzed and set into relation to electrical conductivity measurements by calculating the plasmon lifetime and the electron scattering rate. Here, a good agreement between these different methods was obtained.

  17. Precise calibration of Mg concentration in Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates

    SciTech Connect (OSTI)

    Kozuka, Y.; Falson, J.; Tsukazaki, A.; Segawa, Y.; Makino, T.; Kawasaki, M.

    2012-08-15

    The growth techniques for Mg{sub x}Zn{sub 1-x}O thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates, ranging from the solubility limit of x {approx} 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by x-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the Mg{sub x}Zn{sub 1-x}O peak in standard laboratory equipment, and thus limits quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the Mg{sub x}Zn{sub 1-x}O films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that x-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.

  18. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; Brown, G. M.

    2011-01-01

    The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore » significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less

  19. Ethanol Steam Reforming on Co/CeO2: The Effect of ZnO Promoter

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Wang, Yong

    2013-12-02

    A series of ZnO promoted Co/CeO2 catalysts were synthesized and characterized using XRD, TEM, H2-TPR, CO chemisorption, O2-TPO, IR-Py, and CO2-TPD. The effects of ZnO on the catalytic performances of Co/CeO2 were studied in ethanol steam reforming. It was found that the addition of ZnO facilitated the oxidation of Co0 via enhanced oxygen mobility of the CeO2 support which decreased the activity of Co/CeO2 in C–C bond cleavage of ethanol. 3 wt% ZnO promoted Co/CeO2 exhibited minimum CO and CH4 selectivity and maximum CO2 selectivity. This resulted from the combined effects of the following factors with increasing ZnO loading: (1) enhanced oxygen mobility of CeO2 facilitated the oxidation of CHx and CO to form CO2; (2) increased ZnO coverage on CeO2 surface reduced the interaction between CHx/CO and Co/CeO2; and (3) suppressed CO adsorption on Co0 reduced CO oxidation rate to form CO2. In addition, the addition of ZnO also modified the surface acidity and basicity of CeO2, which consequently affected the C2–C4 product distributions.

  20. Thermoelectric properties of rocksalt ZnO from first-principles calculations

    SciTech Connect (OSTI)

    Alvarado, Andrew; Attapattu, Jeevake; Zhang, Yi; Chen, Changfeng

    2015-10-28

    Zinc oxide (ZnO) undergoes a pressure-induced structural transition from its normal ambient-pressure wurtzite (WZ) phase to a rocksalt (RS) phase around 10 GPa. A recent experiment shows that the high-pressure RS ZnO phase can be recovered and stabilized at ambient conditions, which raises exciting prospects of expanding the range of properties of ZnO. For a fundamental understanding of the RS ZnO phase, we have performed first-principles calculations to determine its electronic, phonon, and thermodynamic properties at high (20 GPa) and ambient (0 GPa) pressure. Furthermore, we have calculated its electrical and thermal transport properties, which allow an evaluation of its thermoelectric figure of merit ZT at different temperature and doping levels. Our calculations show that the ambient-pressure RS ZnO phase can reach ZT values of 0.25 to 0.3 under both n-type and p-type doping in a large temperature range of 400 K to 800 K, which is considerably lower than the temperature range of 1400 K to 1600 K where WZ ZnO reaches similar ZT values. These results establish RS ZnO as a promising material for thermoelectric devices designed to operate at temperatures desirable for many heat recovery applications.

  1. ZnTeO{sub 3} crystal growth by a modified Bridgman technique

    SciTech Connect (OSTI)

    Nawash, Jalal M. Lynn, Kelvin G.

    2014-12-15

    Highlights: • ZnTeO{sub 3} single crystals were grown for the first time by a modified Bridgman method. • The growth is still possible in a system that lacks congruent melting. • A growth is best when melt is exposed to a steeper axial thermal gradient. • Optical and electrical properties were investigated for the grown crystals. - Abstract: Zinc Tellurite (ZnTeO{sub 3}) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO{sub 3} was hindered by many complicating factors, such as the evaporation of TeO{sub 2} above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO{sub 3} single crystals, it was found that large (≥10 cm{sup 3}) single ZnTeO{sub 3} crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO{sub 3}. Some optical, electrical and structural properties of ZnTeO{sub 3} single crystals were reported in this paper.

  2. High electron mobility ZnO film for high-performance inverted polymer solar cells

    SciTech Connect (OSTI)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng Ding, Kai

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  3. Modifying structure-sensitive reactions by addition of Zn to Pd

    SciTech Connect (OSTI)

    Childers, David J.; Schweitzer, Neil M.; Kamali Shahari, Seyed Mehdi; Rioux, Robert M.; Miller, Jeffrey T.; Meyer, Randall J.

    2014-10-01

    Silica-supported Pd and PdZn nanoparticles of a similar size were evaluated for neopentane hydrogenolysis/isomerization and propane hydrogenolysis/dehydrogenation. Monometallic Pd showed high neopentane hydrogenolysis selectivity. Addition of small amounts of Zn to Pd lead Pd–Zn scatters in the EXAFS spectrum and an increase in the linear bonded CO by IR. In addition, the neopentane turnover rate decreased by nearly 10 times with little change in the selectivity. Increasing amounts of Zn lead to greater Pd–Zn interactions, higher linear-to-bridging CO ratios by IR and complete loss of neopentane conversion. Pd NPs also had high selectivity for propane hydrogenolysis and thus were poorly selective for propylene. The PdZn bimetallic catalysts, however, were able to preferentially catalyze dehydrogenation, were not active for propane hydrogenolysis, and thus were highly selective for propylene formation. The decrease in hydrogenolysis selectivity was attributed to the isolation of active Pd atoms by inactive metallic Zn,demonstrating that hydrogenolysis requires a particular reactive ensemble whereas propane dehydrogenation does not.

  4. Low temperature atomic layer deposited ZnO photo thin film transistors

    SciTech Connect (OSTI)

    Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci; Biyikli, Necmi; Okyay, Ali K.; Yu, Hyun Yong

    2015-01-01

    ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250?C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80?C; I{sub on}/I{sub off} ratio is extracted as 7.8 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80?C. I{sub D}V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.

  5. Performance evaluation of ZnO–CuO hetero junction solid state room temperature ethanol sensor

    SciTech Connect (OSTI)

    Yu, Ming-Ru; Suyambrakasam, Gobalakrishnan; Wu, Ren-Jang; Department of Nanotechnology, School of Interdisciplinary Courses, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629180, Tamil Nadu ; Chavali, Murthy; Department of Applied Chemistry, Providence University, 200 Chungchi Road, Shalu, Taichung Hsien 433, Taiwan, R.O.C

    2012-07-15

    Graphical abstract: Sensor response (resistance) curves of time were changed from 150 ppm to 250 ppm alcohol concentration of ZnO–CuO 1:1. The response and recovery times were measured to be 62 and 83 s, respectively. The sensing material ZnO–CuO is a high potential alcohol sensor which provides a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature. Highlights: ► The main advantages of the ethanol sensor are as followings. ► Novel materials ZnO–CuO ethanol sensor. ► The optimized ZnO–CuO hetero contact system. ► A good sensor response and room working temperature (save energy). -- Abstract: A semiconductor ethanol sensor was developed using ZnO–CuO and its performance was evaluated at room temperature. Hetero-junction sensor was made of ZnO–CuO nanoparticles for sensing alcohol at room temperature. Nanoparticles were prepared by hydrothermal method and optimized with different weight ratios. Sensor characteristics were linear for the concentration range of 150–250 ppm. Composite materials of ZnO–CuO were characterized using X-ray diffraction (XRD), temperature-programmed reduction (TPR) and high-resolution transmission electron microscopy (HR-TEM). ZnO–CuO (1:1) material showed maximum sensor response (S = R{sub air}/R{sub alcohol}) of 3.32 ± 0.1 toward 200 ppm of alcohol vapor at room temperature. The response and recovery times were measured to be 62 and 83 s, respectively. The linearity R{sup 2} of the sensor response was 0.9026. The sensing materials ZnO–CuO (1:1) provide a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature.

  6. Synthesis of Sn-doped ZnO nanorods and their photocatalytic properties

    SciTech Connect (OSTI)

    Wu, Changle; Shen, Li; Yu, Huaguang; Huang, Qingli; Zhang, Yong Cai

    2011-07-15

    Graphical abstract: Sn-doped ZnO nanorods have been fabricated by a hydrothermal route. Photocatalytic activity of the Sn-doped ZnO samples increases gradually with an increase of the Sn content. Highlights: {yields} Sn-doped ZnO nanorods were fabricated by a hydrothermal route. {yields} Solid-state NMR result confirms Sn{sup 4+} was incorporated into the lattice of ZnO. {yields} The visible luminescence intensity increased with increase in Sn concentration. {yields} Photocatalytic activity of Sn-doped ZnO increases with increasing Sn content. -- Abstract: Sn-doped ZnO nanorods were fabricated by a hydrothermal route, and characterized by X-ray diffraction, field emission scanning electron microscope, UV-vis spectroscopy, Raman spectra, solid-state nuclear magnetic resonance (NMR) spectra, and room temperature photoluminescence spectroscopy. Solid-state NMR result confirms that Sn{sup 4+} was successfully incorporated into the crystal lattice of ZnO. Room temperature photoluminescence showed that all the as-synthesized products exhibited a weak UV emission (380 nm) and a strong visible emission (540 nm), but the intensities of the latter emission increased with increase in Sn concentration. The improvement of visible emission at 540 nm in the Sn-doped ZnO samples was suggested to be a result of the lattice defects increased by doping of Sn in zinc oxide. In addition, the photocatalytic studies indicated that Sn-doped ZnO nanorods are a kind of promising photocatalyst in remediation of water polluted by some chemically stable azo dyes.

  7. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

    SciTech Connect (OSTI)

    Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

    2011-03-07

    Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K{sub {alpha}} (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

  8. Phosphorescence quenching by mechanical stimulus in CaZnOS:Cu

    SciTech Connect (OSTI)

    Tu, Dong; Kamimura, Sunao; Xu, Chao-Nan; Fujio, Yuki; Sakata, Yoshitaro; Ueno, Naohiro

    2014-07-07

    We have found that phosphorescence intensity of CaZnOS:Cu decreased visibly under an applied load. This mechanical quenching (MQ) of phosphorescence in CaZnOS:Cu corresponded to the mechanical stimuli. We have thus demonstrated that the MQ of CaZnOS:Cu could be used for visualizing stress distributions in practical applications. We propose that MQ arises from non-radiative recombination due to electron-transfer from trap levels to non-radiative centers as a result of the mechanical load.

  9. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  10. H2S removal with ZnO during fuel processing for PEM fuel cell applications

    SciTech Connect (OSTI)

    Li, Liyu; King, David L.

    2006-09-15

    The possibility of using ZnO as a H2S absorbent to protect catalysts in the gasoline and diesel fuel processor for PEM fuel cell applications was studied. It is possible to use commercial ZnO absorbent as a guard bed to protect the PROX catalyst and PEM fuel cell. However, it is not feasible to use ZnO to protect high and low temperature WGS catalysts, most likely due to COS formation via reactions CO + H2S = COS + H2 and CO2 + H2S = COS + H2O.

  11. Magnetism of Co doped ZnO with Al codoping: carrier induced mechanisms versus extrinsic origins

    SciTech Connect (OSTI)

    Ney, A.; Ney, V.; Ye, S.; Ollefs, K.; Kammermeier, T.; Kaspar, Tiffany C.; Chambers, Scott A.; Wilhelm, F.; Rogalev, A.

    2010-07-23

    Dilute magnetic semiconductors (DMS) which exhibit ferromagnetism (FM) at and above room temperature are a highly desirable class of materials for future spin- tronics devices. Zn1?xCoxO (Co:ZnO) is a heavily studied DMS material in this context. Although controversially discussed in the literature, there is a growing con- sensus, that phase-pure Co:ZnO is paramagnetic (PM)[13]. Altering the preparation conditions can easily lead to phase separation and consequently superparam- agnetism (SPM) [3]. Nonetheless there are recent experimental data claiming that FM can be switched on inCo:ZnO by controlling the carrier concentration [4]. On the other hand, no FM was found in structurally excellent Al-codoped Co:ZnO [5]. However, in the latter work the magnetic characterization was restricted to room temperature measurements. In parallel, theory has also revealed that defect-free, insulating Co:ZnO is not ferromagnetic [6, 7] whereas the role of n-type carriers remains under debate, ranging from ferromagnetic coupling [8], or oscil- latory behavior with Co-Co distance [9] to antiferromagnetic coupling [10]. It is rather common to manipulate the n-type carrier concentration of ZnO by Al-doping to yield high conductivity [4, 11]. On the other hand, it had been shown that Al-codoping of Co:ZnO may promote the onset of phase separation [11]. It is extremely difficult to detect such secondary Co-containing phases even with the most careful x-ray diffraction (XRD) analysis [11, 12] or depth-profiling photoelectron spectroscopy (DP-XPS) [13]. Such careful materials characterization is lacking in Ref. [4]. An alternative to extensive XRD or DP-XPS to look for potential phase separation in Co:ZnO is the combination of x-ray absorption near edge spectra (XANES), x-ray linear dichroism (XLD), and x-ray magnetic circular dichroism (XMCD). This suite of atom-specific x-ray spectroscopies nicely complements integral superconducting quantum interference device (SQUID) magnetometry

  12. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect (OSTI)

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  13. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect (OSTI)

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  14. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Srinet, Gunjan Kumar, Ravindra Sajal, Vivek

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  15. Coulomb Excitation of Neutron-Rich Zn Isotopes: First Observation of the 2{sub 1}{sup +} State in {sup 80}Zn

    SciTech Connect (OSTI)

    Van de Walle, J.; Cocolios, T. E.; Huyse, M.; Ivanov, O.; Mayet, P.; Raabe, R.; Sawicka, M.; Stefanescu, I.; Duppen, P. van; Aksouh, F.; Behrens, T.; Gernhauser, R.; Kroell, T.; Kruecken, R.; Bildstein, V.; Blazhev, A.; Eberth, J.

    2007-10-05

    Neutron-rich, radioactive Zn isotopes were investigated at the Radioactive Ion Beam facility REX-ISOLDE (CERN) using low-energy Coulomb excitation. The energy of the 2{sub 1}{sup +} state in {sup 78}Zn could be firmly established and for the first time the 2{sup +}{yields}0{sub 1}{sup +} transition in {sup 80}Zn was observed at 1492(1) keV. B(E2,2{sub 1}{sup +}{yields}0{sub 1}{sup +}) values were extracted for {sup 74,76,78,80}Zn and compared to large scale shell model calculations. With only two protons outside the Z=28 proton core, {sup 80}Zn is the lightest N=50 isotone for which spectroscopic information has been obtained to date. Two sets of advanced shell model calculations reproduce the observed B(E2) systematics. The results for N=50 isotones indicate a good N=50 shell closure and a strong Z=28 proton core polarization. The new results serve as benchmarks to establish theoretical models, predicting the nuclear properties of the doubly magic nucleus {sup 78}Ni.

  16. X-ray absorption studies of mixed salt polymer electrolytes: ZnBr{sub 2}/CaBr{sub 2}-PEO, ZnBr{sub 2}/LiBr-PEO, and ZnBr{sub 2}/RbBr-PEO complexes

    SciTech Connect (OSTI)

    McBreen, J.; Yang, X.Q.; Lee, H.S.; Okamoto, Y.

    1995-02-01

    Polyethylene oxide (PEO)-salt systems are an important new class of electrolytes that are being considered for many uses. X-ray absorption (XAS) studies of ZnBr{sub 2}-PEO complexes, at the Zn K edge, at temperatures between 25 and 120 C, indicate that additions of bromide salts of Li, Rb, or Ca result in the formation of ZnBr{sub 4}{sup {minus} 2} complexes with a Zn-Br bond length of 2.42 {angstrom}. XAS, at the Rb K edge, in mixed RbBr/ZnBr{sub 2}-PEO complexes with an excess of ZnBr{sub 2}, shows that the ZnBr{sub 2} causes the RbBr to dissolve in the polymer. The Rb{sup +} ions are weakly complexed with the PEO with an Rb-O bond distance of 2.93 {angstrom}.

  17. Phase relations and structural features in the system Ni-Zn-B

    SciTech Connect (OSTI)

    Malik, Z.; Grytsiv, A.; Rogl, P.; Giester, G.; Bursik, J.

    2013-02-15

    Phase relations for the system Ni-Zn-B have been established in the isothermal section at 800 Degree-Sign C based on X-ray powder diffraction and electron microprobe analyses of about 60 samples, which have been prepared by hot pressing of pre-annealed powder compacts of arc-melted master alloys Ni{sub x}B{sub y} and Zn-filings. Six ternary compounds (labeled {tau}{sub 1} to {tau}{sub 6}) were found to exist, which in some cases exhibit considerable mutual solid solubilities mostly as an exchange of Ni-Zn at constant B-content, but in the case of the so-called {tau}-phase {tau}{sub 1}-(Ni{sub 1-x}Zn{sub x}){sub 21}[Zn{sub 1-y-z}{open_square}{sub y}(B{sub 4}){sub z}]{sub 2}B{sub 6} (0.07{<=}x{<=}0.11, 0.07{<=}y{<=}0.53, 0{<=}z{<=}0.3) also with Zn/B substitution. Single crystal X-ray data analysis for the composition x=0.07, y=0.125, z=0.30, and a=1.05800(3) nm confirmed the Cr{sub 23}C{sub 6} type with space group Fm3{sup Macron }m, but revealed partial replacement of Zn-atoms by B{sub 4}-tetrahedra (R{sub F}=0.014). Whereas Ni/Zn exchange (at constant B-content) ranges at about 4-5 at% for {tau}{sub 4}-Ni{sub 3}ZnB{sub 2} and {tau}{sub 5}-Ni{sub 48}Zn{sub 32}B{sub 20}, it is below 3 at% for {tau}{sub 2}-Ni{sub 12}ZnB{sub 8-x} (x=0.43), {tau}{sub 3}-Ni{sub 21}Zn{sub 2}B{sub 20} and {tau}{sub 6}-Ni{sub 47}Zn{sub 23}B{sub 30}. The crystal structures of {tau}{sub 2}-Ni{sub 12}ZnB{sub 8-x} (x=0.43; Ni{sub 12}AlB{sub 8} type), {tau}{sub 3}-Ni{sub 21}Zn{sub 2}B{sub 20} (own type) and {tau}{sub 4}-Ni{sub 3}ZnB{sub 2} (own type) have been determined in our foregoing paper [8]. Due to the non-availability of suitable single crystals, the crystal structures of {tau}{sub 5}-Ni{sub 48}Zn{sub 32}B{sub 20} (body-centered orthorhombic; a=1.6(2) nm, b=0.63(7) nm, and c=0.27(0) nm, determined from TEM) and of {tau}{sub 6}-Ni{sub 47}Zn{sub 23}B{sub 30} have not been elucidated yet. Phase equilibria at 800 Degree-Sign C are dominated by a large three-phase field ({beta}B)+Ni{sub 2}Zn

  18. Structural Studies of Al:ZnO Powders and Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film...

  19. Imaging and characterization of piezoelectric potential in a single bent ZnO microwire

    SciTech Connect (OSTI)

    Wang, Chiang-Lun; Chen, Jhih-Wei; Chen, Yi-Chun; Wu, Chung-Lin; Tsai, Shu-Ju; Lin, Kai-Hsiang; Hsu, Hsu-Cheng

    2014-09-22

    We achieved direct visualization of the piezoelectric potentials in a single bent ZnO microwire (MW) using focused synchrotron radiation (soft x-ray) scanning photoelectron spectro-microscopy. Using radial-line scan across the bent section of ZnO MW, the characteristic core-level shifts were directly related to the spatial distribution of piezoelectric potentials perpendicular to the ZnO polar direction. Using piezoelectric modeling in ZnO, we delineated the band structure distortion and carrier concentration change from tensile to compressed sides by combining the spatial resolved cathodoluminescence characteristics in an individual microwire. This spectro-microscopic technique allows imaging and identification of the electric-mechanical couplings in piezoelectric micro-/nano-wire systems.

  20. Determination of the spontaneous polarization of wurtzite (Mg,Zn)O

    SciTech Connect (OSTI)

    Stölzel, Marko Müller, Alexander; Benndorf, Gabriele; Lorenz, Michael; Grundmann, Marius; Patzig, Christian; Höche, Thomas

    2014-05-12

    We report on the experimental determination of the spontaneous polarization of wurtzite-(Mg,Zn)O by examination of the recombination dynamics of polar ZnO/(Mg,Zn)O quantum wells (QWs). The thickness-dependent decay time of the unscreened single-exciton states inside the QWs was modeled by a self-consistent solution of Schrödinger- and Poisson-equation to deduce the total polarization across the QW for different Mg-contents inside the barriers. By the separation of the piezoelectric components of the polarization, a linear increase in spontaneous polarization with increasing Mg-content x of P/x = (0.151 ± 0.015) C/m{sup 2} was determined for Mg{sub x} Zn{sub 1−x} O.

  1. Response-time improved hydrothermal-method-grown ZnO scintillator...

    Office of Scientific and Technical Information (OSTI)

    Response-time improved hydrothermal-method-grown ZnO scintillator for soft x-ray free-electron laser timing-observation Citation Details In-Document Search Title: Response-time...

  2. PEDOT-PSS coated ZnO/C hierarchical porous nanorods as ultralong...

    Office of Scientific and Technical Information (OSTI)

    PEDOT-PSS coated ZnOC hierarchical porous nanorods as ultralong-life anode material for lithium ion batteries This content will become publicly available on November 16, 2017 ...

  3. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    SciTech Connect (OSTI)

    Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-11-17

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.

  4. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    SciTech Connect (OSTI)

    Nam, Chang-Yong Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-11-16

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10{sup 19 }cm{sup −3} carrier density, and ∼0.1 cm{sup 2} V{sup −1} s{sup −1} electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.

  5. Band alignment and interfacial structure of ZnO/Si heterojunction...

    Office of Scientific and Technical Information (OSTI)

    Band alignment and interfacial structure of ZnOSi heterojunction with Alsub 2Osub 3 and HfOsub 2 as interlayers Citation Details In-Document Search Title: Band alignment and ...

  6. Synthesis of ZnO decorated graphene nanocomposite for enhanced photocatalytic properties

    SciTech Connect (OSTI)

    Gayathri, S.; Jayabal, P.; Kottaisamy, M.; Ramakrishnan, V.

    2014-05-07

    Zinc oxide/Graphene (GZ) composites with different concentrations of ZnO were successfully synthesized through simple chemical precipitation method. The X-ray diffraction pattern and the micro-Raman spectroscopic technique revealed the formation of GZ composite, and the energy dispersive X-ray spectrometry analysis showed the purity of the prepared samples. The ZnO nanoparticles decorated graphene sheets were clearly visible in the field emission scanning electron micrograph. Raman mapping was employed to analyze the homogeneity of the prepared samples. The diffuse-reflectance spectra clearly indicated that the formation of GZ composites promoted the absorption in the visible region also. The photocatalytic activity of ZnO and GZ composites was studied by the photodegradation of Methylene blue dye. The results revealed that the GZ composites exhibited a higher photocatalytic activity than pristine ZnO. Hence, we proposed a simple wet chemical method to synthesize GZ composite and its application on photocatalysis was demonstrated.

  7. Alignment nature of ZnO nanowires grown on polished and nanoscale...

    Office of Scientific and Technical Information (OSTI)

    * Self-alignment of the nanowires due to step bunching of LiNbOsub 3 surface is ... As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching ...

  8. Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

    SciTech Connect (OSTI)

    Grinblat, Gustavo; Comedi, David; Bern, Francis; Barzola-Quiquia, Jos; Esquinazi, Pablo; Tirado, Mnica

    2014-03-10

    To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1?V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.

  9. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-11-17

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application ofmore » infiltration synthesis in fabricating metal oxide electronic devices.« less

  10. Single-valley quantum Hall ferromagnet in a dilute MgxZn1-xO/ZnO strongly correlated two-dimensional electron system

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kozuka, Y.; Tsukazaki, A.; Maryenko, D.; Falson, J.; Bell, C.; Kim, M.; Hikita, Y.; Hwang, H. Y.; Kawasaki, M.

    2012-02-03

    We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the MgxZn1-xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates thatmore » the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.« less

  11. Low-temperature aqueous-phase reforming of ethanol on bimetallic PdZn catalysts

    SciTech Connect (OSTI)

    Xiong, Haifeng; DelaRiva, Andrew; Wang, Yong; Dayte, Abhaya

    2015-01-01

    Bimetallic PdZn catalysts supported on carbon black (CB) and carbon nanotubes (CNTs) were found to be selective for CO-free H-2 production from ethanol at low temperature (250 degrees C). On Pd, the H-2 yield was low (similar to 0.3 mol H-2/mol ethanol reacted) and the CH4/CO2 ratio was high (similar to 1.7). Addition of Zn to Pd formed the intermetallic PdZn beta phase (atomic ratio of Zn to Pd is 1) with increased H-2 yield (similar to 1.9 mol H-2/mol ethanol reacted) and CH4/CO2 ratio of <1. The higher H-2 yield and low CH4 formation was related to the improved dehydrogenation activity of the L1(0) PdZn beta phase. The TOF increased with particle size and the CNTs provided the most active and selective catalysts, which may be ascribed to pore-confinement effects. Furthermore, no significant changes in either the supports or the PdZn beta particles was found after aqueous-phase reforming (APR) indicating that the metal nanoparticles and the carbon support are hydrothermally stable in the aqueous phase at elevated temperatures and pressures (>200 degrees C, 65 bar). No CO was detected for all the catalysts performed in aqueous-phase reaction, indicating that both monometallic Pd and bimetallic PdZn catalysts have high water-gas shift activity during APR. However, the yield of H-2 is considerably lower than the theoretical value of 6 H-2 per mole ethanol which is due to the presence of oxygenated products and methane on the PdZn catalysts.

  12. Thin-film polycrystalline n-ZnO/p-CuO heterojunction

    SciTech Connect (OSTI)

    Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. Terukov, E. I.

    2009-06-15

    Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

  13. Self-assembled ultra small ZnO nanocrystals for dye-sensitized solar cell application

    SciTech Connect (OSTI)

    Patra, Astam K.; Dutta, Arghya; Bhaumik, Asim

    2014-07-01

    We demonstrate a facile chemical approach to produce self-assembled ultra-small mesoporous zinc oxide nanocrystals using sodium salicylate (SS) as a template under hydrothermal conditions. These ZnO nanomaterials have been successfully fabricated as a photoanode for the dye-sensitized solar cell (DSSC) in the presence of N719 dye and iodinetriiodide electrolyte. The structural features, crystallinity, purity, mesophase and morphology of the nanostructure ZnO are investigated by several characterization tools. N{sub 2} sorption analysis revealed high surface areas (203 m{sup 2} g{sup ?1}) and narrow pore size distributions (5.15.4 nm) for different samples. The mesoporous structure and strong photoluminescence facilitates the high dye loading at the mesoscopic void spaces and light harvesting in DSSC. By utilizing this ultra-small ZnO photoelectrode with film thickness of about 7 ?m in the DSSC with an open-circuit voltage (V{sub OC}) of 0.74 V, short-circuit current density (J{sub SC}) of 3.83 mA cm{sup ?2} and an overall power conversion efficiency of 1.12% has been achieved. - Graphical abstract: Ultra-small ZnO nanocrystals have been synthesized with sodium salicylate as a template and using it as a photoanode in a dye-sensitized solar cell 1.12% power conversion efficiency has been observed. - Highlights: Synthesis of self-assembled ultra-small mesoporous ZnO nanocrystals by using sodium salicylate as a template. Mesoporous ZnO materials have high BET surface areas and void space. ZnO nanoparticles serve as a photoanode for the dye-sensitized solar cell (DSSC). Using ZnO nanocrystals as photoelectrode power conversion efficiency of 1.12% has been achieved.

  14. Characterization of Aerosols Containing Zn, Pb, and Cl from an Industrial Region of Mexico City

    SciTech Connect (OSTI)

    Moffet, Ryan C.; Desyaterik, Yury; Hopkins, Rebecca J.; Tivanski, Alexei V.; Gilles, Marry K.; Wang, Yan A.; Shutthanandan, V.; Molina, Luisa T.; Abraham, Rodrigo G.; Johnson, Kirsten S.; Mugica, Violeta; Molina, Mario J.; Laskin, Alexander; Prather, Kimberly A.

    2008-10-01

    During the March, 2006 MILAGRO campaign, measurements in the Northern Mexico City Metropolitan Area revealed the frequent appearance of particles with a characteristically high content of internally mixed Zn, Pb, Cl, and P. A comprehensive study of the chemical and physical properties of these particles was performed using a complementary combination of aerosol measurement techniques. Individual particles were analyzed using Aerosol Time-of-Flight Mass Spectrometry (ATOFMS) and Computer Controlled Scanning Electron Microscopy/Energy Dispersive X-Ray spectroscopy (CCSEM/EDX). Proton Induced X-Ray Emission (PIXE) analysis of bulk aerosol samples provided time-resolved mass concentrations of individual elements. The PIXE measurements indicated that Zn is more strongly correlated with Cl than with any other element and that Zn concentrations are higher than other non-ferrous transition metals. The Zn- and Pb - containing particles have both spherical and non-spherical morphologies. Many metal rich particles had needle-like structures and were found to be composed of ZnO and/or Zn(NO3)2?6H2O as indicated by scanning transmission x-ray microscopy/near edge X-ray absorption spectroscopy (STXM/NEXAFS). The Zn and Pb rich particles were primarily in the submicron size range and internally mixed with elemental carbon. The unique chemical associations most closely match signatures acquired for garbage incineration. This unique combination of complementary analytical techniques has allowed for a comprehensive evaluation of Zn- and Pb- containing particles in a complex urban environment, highlighting unique characteristics that give powerful insight into their origin.

  15. Facile synthesis of pompon-like ZnO-Ag nanocomposites and their enhanced photocatalytic performance

    SciTech Connect (OSTI)

    Cheng, Yang; An, Liang; Lan, Jing; Gao, Fang; Tan, Ruiqin; Li, Xiao-min; Wang, Guang-hui

    2013-10-15

    Graphical abstract: - Highlights: • Pompon-like ZnO-Ag was prepared via heterothermal and photodeposition method. • Pompon-like ZnO-Ag is a excellent photocatalyst for degradation of azo dyes. • The photocatalytic and wetting properties were studied upon UV irradiation. • The discoloring efficiency of ZnO-Ag heterostructure toward to azo dyes is 99.1%. - Abstract: A series of pompon-like ZnO-Ag nanocomposites were prepared by hydrothermal method and photochemical deposition technique. Several characterizations indicated the successful deposition of Ag nanoparticles on ZnO. As a whole, the as-prepared composites present pompon-like nanostructures with a diameter of ∼10 μm. In detail, the nanostructural, chemical and optical properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), infrared spectroscopy (IR), ultra-visible spectra (UV). The photocatalytic degradation experiments under UV irradiation using Methyl Orange (MO) as a model dye were executed here. The relative results demonstrated that the pompon-like ZnO-Ag nanocomposite with a suitable content of Ag nanoparticles (about 4.82 wt%) has the highest photochemical activity, and the removal ratio of MO was 99.1% after 0.5 h adsorption and subsequent 2 h photodegradation processes. The excellent photocatalytic performance was attributed to the high surface areas of ZnO nanostructure and effectively separation of photo-generated charge on flower-like ZnO by employing Ag nanoparticles as a conductor.

  16. Synthesis of highly efficient antibacterial agent Ag doped ZnO nanorods: Structural, Raman and optical properties

    SciTech Connect (OSTI)

    Jan, Tariq; Iqbal, Javed; Ismail, Muhammad; Mahmood, Arshad

    2014-04-21

    Here, synthesis, structural, morphological, Raman, optical properties and antibacterial activity of undoped and Ag doped ZnO nanorods by chemical co-precipitation technique have been reported. Structural analysis has revealed that Ag doping cannot deteriorate the structure of ZnO and wurtzite phase is maintained. Lattice constants are found to be decreased with the Ag doping. Fourier transform infrared and Raman spectroscopy also confirm the X-ray diffraction results. Scanning electron microscopy results have demonstrated the formation of ZnO nanorods with average diameter and length of 96 nm and 700 nm, respectively. Raman spectroscopy results suggest that the Ag doping enhances the number of defects in ZnO crystal. It has been found from optical study that Ag doping results in positional shift of band edge absorption peak. This is attributed to the successful incorporation of Ag dopant into ZnO host matrix. The antibacterial activity of prepared nanorods has been determined by two different methods and compared to that of undoped ZnO nanorods. Ag doped ZnO nanorods exhibit excellent antibacterial activity as compared to that of undoped ZnO nanorods. This excellent antibacterial activity may be attributed to the presence of oxygen vacancies and Zn{sup 2+} interstitial defects. Our preliminary findings suggest that Ag doped ZnO nanorods can be used externally to control the spreading of infections related with tested bacterial strains.

  17. Zn speciation in a soil contaminated by the deposition of a dredged sediment by synchrotron X-ray techniques

    SciTech Connect (OSTI)

    Isaure, Marie-Pierre; Manceau, Alain; Laboudigue, Agnes; Tamura, Nobumichi; Marcus, Matthew A.

    2003-09-01

    The nature and proportion of Zn species present in an agricultural soil overlaid by a dredged contaminated sediment have been untangled by the novel combination of three non-invasive synchrotron-based x-ray techniques: x-ray microfluorescence ({mu}SXRF), microdiffraction ({mu}XRD), and absorption spectroscopy (EXAFS). One primary (franklinite) and two secondary (phyllomanganate and phyllosilicate) Zn-containing minerals were identified in the initial soil, and another primary (ZnS) and a new secondary (Fe-(oxyhydr)oxide) Zn species in the covered soil. The quantitative analysis of EXAFS spectra recorded on bulk samples indicated that ZnS and Zn-Fe (oxyhydr)oxides amounted to 71+-10 percent and 27+-10 percent, respectively, and the other Zn species to less than 10 percent. The two new Zn species found in the covered soil result from the gravitational migration of ZnS particles initially present in the sediment, and from their further oxidative dissolution and fixation of leached Zn on F e (oxyhydr) oxides.

  18. Determination of reactive oxygen species from ZnO micro-nano structures with shape-dependent photocatalytic activity

    SciTech Connect (OSTI)

    He, Weiwei; Zhao, Hongxiao; Jia, Huimin; Yin, Jun-Jie; Zheng, Zhi

    2014-05-01

    Graphical abstract: ZnO micro/nano structures with shape dependent photocatalytic activity were prepared by hydrothermal reaction. The generations of hydroxyl radical, superoxide and singlet oxygen from irradiated ZnO were identified precisely by electron spin resonance spectroscopy. The type of reactive oxygen species was determined by band gap structure of ZnO. - Highlights: ZnO micro/nano structures with different morphologies were prepared by solvothermal reaction. Multi-pod like ZnO structures exhibited superior photocatalytic activity. The generations of hydroxyl radical, superoxide and singlet oxygen from irradiated ZnO were characterized precisely by electron spin resonance spectroscopy. The type of reactive oxygen species was determined by band gap structure of ZnO. - Abstract: ZnO micro/nano structures with different morphologies have been prepared by the changing solvents used during their synthesis by solvothermal reaction. Three typical shapes of ZnO structures including hexagonal, bell bottom like and multi-pod formed and were characterized by scanning electron microscopy and X-ray diffraction. Multi pod like ZnO structures exhibited the highest photocatalytic activity toward degradation of methyl orange. Using electron spin resonance spectroscopy coupled with spin trapping techniques, we demonstrate an effective way to identify precisely the generation of hydroxyl radicals, superoxide and singlet oxygen from the irradiated ZnO multi pod structures. The type of reactive oxygen species formed was predictable from the band gap structure of ZnO. These results indicate that the shape of micro-nano structures significantly affects the photocatalytic activity of ZnO, and demonstrate the value of electron spin resonance spectroscopy for characterizing the type of reactive oxygen species formed during photoexcitation of semiconductors.

  19. Effects of hydrogen on the optical properties of ZnCdO/ZnO quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Buyanova, I. A.; Wang, X. J.; Chen, W. M.; Pozina, G.; Lim, W.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W.; Hertog, B.

    2008-06-30

    Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO/ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of {sup 2}H from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

  20. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

    SciTech Connect (OSTI)

    Khan, Azam Edberg, Jesper; Nur, Omer; Willander, Magnus

    2014-07-21

    In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

  1. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect (OSTI)

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  2. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    SciTech Connect (OSTI)

    Aravindh, S. Assa; Schwingenschloegl, Udo E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S. E-mail: iman.roqan@kaust.edu.sa

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  3. Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

    SciTech Connect (OSTI)

    Napari, Mari Malm, Jari; Lehto, Roope; Julin, Jaakko; Arstila, Kai; Sajavaara, Timo; Lahtinen, Manu

    2015-01-15

    ZnO films were grown by atomic layer deposition at 35?C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30?nm) with a film surface roughness up to 6?nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

  4. Facile combustion synthesis of ZnO nanoparticles using Cajanus cajan (L.) and its multidisciplinary applications

    SciTech Connect (OSTI)

    Manjunath, K.; Ravishankar, T.N.; Kumar, Dhanith; Priyanka, K.P; Varghese, Thomas; Naika, H.Raja; Nagabhushana, H.; Sharma, S.C.; Dupont, J.; Ramakrishnappa, T.; Nagaraju, G.

    2014-09-15

    Graphical abstract: Facile combustion synthesis of ZnO nanoparticles using Cajanuscajan (L.) and its multidisciplinary applications.Zinc oxide nanoparticles were successfully synthesized by solution combustion method (SCM) using pigeon pea as a combustible fuel for the first time. The as-prepared product shows good photocatalytic, dielectric, antibacterial, electrochemical properties. - Highlights: • ZnO Nps were synthesized via combustion method using pigeon pea as a fuel. • The structure of the product was confirmed by XRD technique. • The morphology was confirmed by SEM and TEM images. • The as-prepared product shown good photocatalytic activity, dielectric property. • It has also shown good antibacterial and electrochemical properties. - Abstract: Zinc oxide nanoparticles (ZnO Nps) were successfully synthesized by solution combustion method (SCM) using pigeon pea as a fuel for the first time. X-Ray diffraction pattern reveals that the product belongs to hexagonal system. FTIR spectrum of ZnO Nps shows the band at 420 cm{sup −1} associated with the characteristic vibration of Zn–O. TEM images show that the nanoparticles are found to be ∼40–80 nm. Furthermore, the as-prepared ZnO Nps exhibits good photocatalytic activity for the photodegradation of methylene blue (MB), indicating that they are indeed a promising photocatalytic semiconductor. The antibacterial properties of ZnO nanopowders were investigated by their bactericidal activity against four bacterial strains.

  5. Effects of Zn additions to highly magnetoelastic FeGa alloys

    SciTech Connect (OSTI)

    Lograsso, Thomas A.; Jones, Nicholas J.; Wun-Fogle, Marilyn; Restorff, James B.; Schlagel, Deborah L.; Petculescu, Gabriela; Clark, Arthur E.; Hathaway, Kristl B.

    2015-05-07

    Fe{sub 1−x}M{sub x} (M = Ga, Ge, Si, Al, Mo and x ∼ 0.18) alloys offer an extraordinary combination of magnetoelasticity and mechanical properties. They are rare-earth-free, can be processed using conventional deformation techniques, have high magnetic permeability, low hysteresis, and low magnetic saturation fields, making them attractive for device applications such as actuators and energy harvesters. Starting with Fe-Ga as a reference and using a rigid-band-filling argument, Zhang et al. predicted that lowering the Fermi level by reducing the total number of electrons could enhance magnetoelasticity. To provide a direct experimental validation for Zhang's hypothesis, elemental additions with lower-than-Ga valence are needed. Of the possible candidates, only Be and Zn have sufficient solubility. Single crystals of bcc Fe-Ga-Zn have been grown with up to 4.6 at. % Zn in a Bridgman furnace under elevated pressure (15 bars) in order to overcome the high vapor pressure of Zn and obtain homogeneous crystals. Single-crystal measurements of magnetostriction and elastic constants allow for the direct comparison of the magnetoelastic coupling constants of Fe-Ga-Zn with those of other magnetoelastic alloys in its class. The partial substitution of Ga with Zn yields values for the magnetoelastic coupling factor, −b{sub 1}, comparable to those of the binary Fe-Ga alloy.

  6. Platelets to rings: Influence of sodium dodecyl sulfate on Zn-Al layered double hydroxide morphology

    SciTech Connect (OSTI)

    Yilmaz, Ceren; Unal, Ugur; Yagci Acar, Havva

    2012-03-15

    In the current study, influence of sodium dodecyl sulfate (SDS) on the crystallization of Zn-Al layered double hydroxide (LDH) was investigated. Depending on the SDS concentration coral-like and for the first time ring-like morphologies were obtained in a urea-hydrolysis method. It was revealed that the surfactant level in the starting solution plays an important role in the morphology. Concentration of surfactant equal to or above the anion exchange capacity of the LDH is influential in creating different morphologies. Another important parameter was the critical micelle concentration (CMC) of the surfactant. Surfactant concentrations well above CMC value resulted in ring-like structures. The crystallization mechanism was discussed. - Graphical abstract: Dependence of ZnAl LDH Morphology on SDS concentration. Highlights: Black-Right-Pointing-Pointer In-situ intercalation of SDS in ZnAl LDH was achieved via urea hydrolysis method. Black-Right-Pointing-Pointer Morphology of ZnAl LDH intercalated with SDS depended on the SDS concentration. Black-Right-Pointing-Pointer Ring like morphology for SDS intercalated ZnAl LDH was obtained for the first time. Black-Right-Pointing-Pointer Growth mechanism was discussed. Black-Right-Pointing-Pointer Template assisted growth of ZnAl LDH was proposed.

  7. Optical injection probing of single ZnO tetrapod lasers

    SciTech Connect (OSTI)

    Szarko, Jodi M.; Song, Jae Kyu; Blackledge, Charles Wesley; Swart, Ingmar; Leone, Stephen R.; Li, Shihong; Zhao, Yiping

    2004-11-23

    The properties of zinc oxide (ZnO) nanotetrapod lasers are characterized by a novel ultrafast two-color pump/stimulated emission probe technique. Single legs of tetrapod species are isolated by a microscope objective, pumped by 267 nm pulses, and subjected to a time-delayed 400 nm optical injection pulse, which permits investigation of the ultrafast carrier dynamics in the nanosize materials. With the optical injection pulse included, a large increase in the stimulated emission at 400 nm occurs, which partially depletes the carriers at this wavelength and competes with the normal 390 nm lasing. At the 390 nm lasing wavelengths, the optical injection causes a decrease in the stimulated emission due to the energetic redistribution of the excited carrier depletion, which occurs considerably within the time scale of the subpicosecond duration of the injection pulse. The effects of the optical injection on the spectral gain are employed to probe the lasing dynamics, which shows that the full width at half maximum of the lasing time is 3 ps.

  8. LiF/ZnS Neutron Multiplicity Counter

    SciTech Connect (OSTI)

    Stave, Sean C.; Bliss, Mary; Kouzes, Richard T.; Lintereur, Azaree T.; Robinson, Sean M.; Siciliano, Edward R.; Wood, Lynn S.

    2015-06-01

    Abstract: Alternatives to the use of 3He for the detection of thermal neutrons are being investigated. One of the most challenging applications for 3He alternatives is in neutron multiplicity counters. Neutron multiplicity counters are used to provide rapid assay of samples which contain an unknown amount of plutonium in a potentially unknown configuration. With appropriate detector design, the neutron single, double, and triple coincidence events can be used to extract information of three unknown parameters such as the 240Pu-effective mass, the sample self-multiplication, and the (α,n) rate. A project at PNNL has investigated replacing 3He-based tubes with LiF/ZnS neutron-scintillator sheets and wavelength shifting plastic for light pipes. A four-panel demonstrator module has been constructed, tested, and compared with detailed modeling results. The findings indicate that a full-scale system can be constructed with the same overall size as the most efficient 3He-based system and with improved performance. Remaining design challenges include electronics and robust neutron/gamma-ray discrimination based on pulse shape analysis at high rates. A review of the current effort and the most recent findings will be presented.

  9. Structural and optical properties of ZnO: K synthesized by sol-gel auto-combustion route

    SciTech Connect (OSTI)

    Krithiga, R. Sankar, S.; Subhashree, G.; Bharathi, R. Niruban

    2015-06-24

    The structural and optical behavior of ZnO and ZnO doped with K synthesized by solution combustion route is reported in this article. The XRD patterns confirm the substitution of K atoms into ZnO lattice. There are no secondary peaks observed in the XRD patterns. The band gap of the K doped samples show a red shift on comparison with the bandgap of ZnO. The photoluminescence spectral study discloses the quenching behavior of UV emission and the aggrandizing blue emission when K content increases. The rich presence of defects is confirmed from the optical analysis and a practical mechanism, involving Zn{sub i} for the origin of the blue emission in ZnO is discussed here.

  10. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect (OSTI)

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  11. Structural and degradation studies of a biocompatible Zn-L-tartrate metal–organic framework

    SciTech Connect (OSTI)

    Palǒić, Ana; Puškarić, Andreas; Mazaj, Matjaž; Žunkoviǒ, Emanuela; Logar, Nataša Zabukovec; Bronić, Josip

    2015-05-15

    New anhydrous Zn-L-tratrate was synthesized under hydrothermal conditions. Crystal structure which was solved by powder X-ray diffraction data from monoclinic unit cell (I{sub 2}, a=11.7557(1), b=9.0319(1), c=5.0750(1), β=91.920(1)) consists of the three-dimensional framework where each Zn atom coordinates four tartrate ligands in distorted octahedral geometry. Due to its biocompatible components, the degradation of material was studied in aqueous media under different pH values (pH=1–7) and in the simulated body fluid (pH=7.4) performed by the measurement of the released Zn{sup 2+} concentrations at thermostatic conditions (37 °C). The results showed that under acidic conditions approximately 60% of Zn{sup 2+} is released from the investigated material after 6 h of degradation process. With the increase of the solution’s pH, the rate of degradation gradually decreases. XRD and SEM analyses indicate that in aqueous media the compound slowly disintegrates and does not undergo hydrolysis process regardless of pH. Biocompatibility of the compound and its controllable rate of degradation even in acid conditions open its potential use in the fields of bio-applications. - Graphical abstract: The degradation kinetics of Zn-L-tar MOF material in aqueous media at different pH conditions. - Highlights: • Anhydrous chiral Zn-L-tratrate was synthesized under hydrothermal conditions. • 3-D framework consists of Zn atoms, each chelating four tartrate ligands. • Degradation of material was studied in aqueous media at different pH values. • The compound disintegrates in controllable manner in aqueous solutions. • The rate compound degradation is increasing with increased acidity of solution.

  12. Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

    SciTech Connect (OSTI)

    Gareso, P. L. Rauf, N. Juarlin, E.; Sugianto,; Maddu, A.

    2014-09-25

    Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400C to 600C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the asgrown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 and c = 5.2531 .

  13. Development of vertically aligned ZnO-nanowires scintillators for high spatial resolution x-ray imaging

    SciTech Connect (OSTI)

    Kobayashi, Masakazu Komori, Jun; Shimidzu, Kaiji; Izaki, Masanobu; Uesugi, Kentaro; Takeuchi, Akihisa; Suzuki, Yoshio

    2015-02-23

    Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu{sub 3}Al{sub 5}O{sub 12:}Ce{sup 3+}. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.

  14. Influence of oxygen on characteristics of Zn(O,S) thin films deposited by RF magnetron sputtering

    SciTech Connect (OSTI)

    Choi, Ji Hyun; Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won

    2015-07-15

    Zn(O,S) thin films were successfully deposited by reactive sputtering using Ar and O{sub 2} gas mixtures at 473 K. X-ray diffraction patterns revealed that the well crystallized Zn(O,S) films were deposited with increasing oxygen concentration in O{sub 2}/Ar, resulting in a shift of the Zn peak of 28.5° to a higher angle, closer to the ZnO peak of 34.4°. Zn(O,S) films were composed of grains agglomerated from small particles, which grew gradually with increasing oxygen concentration. The depth profiles and energy dispersive spectroscopy results of the films indicated that the O/(O+S) ratio increased from 0.04 to 0.81, and all Zn(O,S) films were Zn rich with uniform concentrations of each component. X-ray photoelectron spectroscopy revealed that, as the oxygen concentration increased to 2%, the ZnS films were transformed to Zn(O,S) films via substitution of oxygen for sulfur.

  15. Microstructural and optical properties of nanocrystalline ZnO deposited onto vertically aligned carbon nanotubes by physical vapor deposition

    SciTech Connect (OSTI)

    Borkar, Tushar; Chang, Won Seok; Hwang, Jun Yeon; Shepherd, Nigel D.; Banerjee, Rajarshi

    2012-10-15

    Nanocrystalline ZnO films with thicknesses of 5 nm, 10 nm, 20 nm, and 50 nm were deposited via magnetron sputtering onto the surface of vertically aligned multi-walled carbon nanotubes (MWCNTs). The ZnO/CNTs heterostructures were characterized by scanning electron microscopy, high resolution transmission electron microscopy, and X-ray diffraction studies. No structural degradation of the CNTs was observed and photoluminescence (PL) measurements of the nanostructured ZnO layers show that the optical properties of these films are typical of ZnO deposited at low temperatures. The results indicate that magnetron sputtering is a viable technique for growing heterostructures and depositing functional layers onto CNTs.

  16. The effect of Ce{sup 4+} incorporation on structural, morphological and photocatalytic characters of ZnO nanoparticles

    SciTech Connect (OSTI)

    Kannadasan, N.; Shanmugam, N. Cholan, S.; Sathishkumar, K.; Viruthagiri, G.; Poonguzhali, R.

    2014-11-15

    We report a simple chemical precipitation method for the preparation of undoped and cerium doped ZnO nanocrystals. The concentration of cerium in the products can be controlled in the range of 0.0250.125 mol. The structure and chemical compositions of the products were characterized by X-ray diffraction, X-ray photoelectron spectroscopy; energy dispersive spectrum and Fourier transform infrared spectroscopy. The results demonstrate that Ce{sup 4+} ions were successfully incorporated into the lattice position of Zn{sup 2+} ions in ZnO. The morphology of the products was analyzed by field emission scanning electron microscopy and confirmed by high resolution transmission electron microscope analysis. The optical properties of the products were studied by ultravioletvisible and room temperature photoluminescence measurements. The photoluminescence emission spectra of Ce-doped ZnO showed enhanced visible emissions as a result of 5d ? 4f transition of cerium. In particular, a novel photocatalytic activity of the products was assessed using methylene blue. The obtained result reveals that Ce-doped products show higher reduction efficiency for methylene blue than the undoped ZnO. - Highlights: Nanocrystals of ZnO and ZnO:Ce{sup 4+} were grown. XPS results confirmed the incorporated cerium in tetravalence. PL emission exhibited 5d ? 4f transition on cerium doping. Doped ZnO decolorizes MB faster than undoped ZnO.

  17. The Investigation of Decomposition of Supersaturated Si<Zn> Solid Solution by X-Ray Diffuse Scattering

    SciTech Connect (OSTI)

    Shcherbachev, Kirill; Privezentsev, Vladimir

    2010-04-06

    The results of investigation of microstructure of Zn doped n-type Si by X-ray Diffuse Scattering (XRDS) are presented. Experimental samples were made by a high-temperature Zn diffusion annealing with subsequent quenching and tempering. Reciprocal space maps of XRDS were obtained. They resulted in that crystal lattice of the samples contains spherical MDs of vacancy type and plane shape MDs of interstitial type. The MDs average radius and their type depend on Zn doping level and thermal treatment after Zn diffusion.

  18. Synthesis and characterization of novel WO{sub 3} loaded Ag–ZnO and its photocatalytic activity

    SciTech Connect (OSTI)

    Subash, B.; Krishnakumar, B.; Pandiyan, V.; Swaminathan, M.; Shanthi, M.

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► A novel WO{sub 3} loaded Ag–ZnO was prepared by a simple solvothermal method. ► ‘Ag’ traps the electron from both ZnO and WO{sub 3} reducing electro–hole recombination. ► WO{sub 3}–Ag–ZnO is more efficient than Ag–ZnO, WO{sub 3}–ZnO, Ag–WO{sub 3} and undoped catalysts. ► WO{sub 3}–Ag–ZnO material will be much useful for the treatment of dye effluents. -- Abstract: A novel WO{sub 3} loaded Ag–ZnO photocatalyst was successfully synthesized by a simple solvothermal method and characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) images, energy dispersive spectrum (EDS), diffuse reflectance spectra (DRS), photoluminescence spectra (PL), cyclic voltammetry (CV) and Brunauer–Emmett–Teller (BET) surface area measurements. The photocatalytic activity of WO{sub 3}–Ag–ZnO was investigated for the degradation of RR 120 and RO 4 dyes in aqueous solution using UV-A light. WO{sub 3}–Ag–ZnO is found to be more efficient than Ag–ZnO, WO{sub 3}–ZnO, Ag–WO{sub 3}, commercial ZnO, prepared ZnO, TiO{sub 2}-P25 and TiO{sub 2} (Merck) at neutral pH for the mineralization of dyes. First time we have reported that novel WO{sub 3} loaded Ag–ZnO has been found to be very efficient for two azo dyes removal when compared to commercially available catalyst (Degussa P25, ZnO (Merck) and TiO{sub 2} (Merck)). The mineralization of dyes has been confirmed by chemical oxygen demand (COD) measurements. A mechanism of degradation has been proposed for the higher efficiency of WO{sub 3}–Ag–ZnO.

  19. La-doped ZnO nanoparticles: Simple solution-combusting preparation and applications in the wastewater treatment

    SciTech Connect (OSTI)

    Wu, Tingting; Ni, Yonghong; Ma, Xiang; Hong, Jianming

    2013-11-15

    Graphical abstract: La-doped ZnO nanoparticles have been successfully prepared by a simple solution combustion route and exhibit good adsorption for Cu and Pb ion from water systems. - Highlights: • La-doped ZnO nanoparticles were successfully prepared via a simple solution-combustion route. • The integration of La{sup 3+} ions into ZnO decreased the band-gap of ZnO nanoparticles. • La-doped ZnO nanoparticles could remove more Pb and Cu ions from water resources than undoped ZnO. - Abstract: La-doped ZnO nanoparticles have been successfully synthesized by a simple solution combustion method via employing a mixture of ethanol and ethyleneglycol (v/v = 60/40) as the solvent. Zinc acetate and oxygen gas in the atmosphere were used as zinc and oxygen sources, and La(NO{sub 3}){sub 3} as the doping reagent. The as-obtained product was characterized by means of powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy. Experiments showed that La-doped ZnO nanoparticles exhibited the higher capacities for the removal of Pb{sup 2+} and Cu{sup 2+} ions in water resource than undoped ZnO nanoparticles.

  20. Copper doping of ZnO crystals by transmutation of {sup 64}Zn to {sup 65}Cu: An electron paramagnetic resonance and gamma spectroscopy study

    SciTech Connect (OSTI)

    Recker, M. C.; McClory, J. W. Holston, M. S.; Golden, E. M.; Giles, N. C.; Halliburton, L. E.

    2014-06-28

    Transmutation of {sup 64}Zn to {sup 65}Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the {sup 65}Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of {sup 64}Zn nuclei to {sup 65}Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu{sup 2+} ions (where {sup 63}Cu and {sup 65}Cu hyperfine lines are easily resolved). A spectrum from isolated Cu{sup 2+} (3d{sup 9}) ions acquired after the neutron irradiation showed only hyperfine lines from {sup 65}Cu nuclei. The absence of {sup 63}Cu lines in this Cu{sup 2+} spectrum left no doubt that the observed {sup 65}Cu signals were due to transmuted {sup 65}Cu nuclei created as a result of the neutron irradiation. Small concentrations of copper, in the form of Cu{sup +}-H complexes, were inadvertently present in our as-grown ZnO crystal. These Cu{sup +}-H complexes are not affected by the neutron irradiation, but they dissociate when a crystal is heated to 900 °C. This behavior allowed EPR to distinguish between the copper initially in the crystal and the copper subsequently produced by the neutron irradiation. In addition to transmutation, a second major effect of the neutron irradiation was the formation of zinc and oxygen vacancies by displacement. These vacancies were observed with EPR.

  1. Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys

    SciTech Connect (OSTI)

    Li, Keyan; Kang, Congying [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)] [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Xue, Dongfeng, E-mail: dongfeng@ciac.jl.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China) [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-10-15

    In this work, the bulk moduli and band gaps of M{sub x}Zn{sub 1?x}O (M = Be, Mg, Ca, Cd) alloys in the whole composition range were quantitatively calculated by using the electronegativity-related models for bulk modulus and band gap, respectively. We found that the change trends of bulk modulus and band gap with an increase of M concentration x are same for Be{sub x}Zn{sub 1?x}O and Cd{sub x}Zn{sub 1?x}O, while the change trends are reverse for Mg{sub x}Zn{sub 1?x}O and Ca{sub x}Zn{sub 1?x}O. It was revealed that the bulk modulus is related to the valence electron density of atoms whereas the band gap is strongly influenced by the detailed chemical bonding behaviors of constituent atoms. The current work provides us a useful guide to compositionally design advanced alloy materials with both good mechanical and optoelectronic properties.

  2. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    SciTech Connect (OSTI)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-11-15

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm{sup 2}) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications.

  3. Synthesis and Characterization of Photocatalytic TiO 2 -ZnFe 2 O 4 Nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.

    2006-01-01

    A new coprecipimore » tation/hydrolysis synthesis route is used to create a TiO 2 -ZnFe 2 O 4 nanocomposite that is directed towards extending the photoresponse of TiO 2 from UV to visible wavelengths ( > 400   nm ). The effect of TiO 2 's accelerated anatase-rutile phase transformation due to the presence of the coupled ZnFe 2 O 4 narrow-bandgap semiconductor is evaluated. The transformation's dependence on pH, calcinations temperature, particle size, and ZnFe 2 O 4 concentration has been analyzed using XRD, SEM, and UV-visible spectrometry. The requirements for retaining the highly photoactive anatase phase present in a ZnFe 2 O 4 nanocomposite are outlined. The visible-light-activated photocatalytic activity of the TiO 2 -ZnFe 2 O 4 nanocomposites has been compared to an Aldrich TiO 2 reference catalyst, using a solar-simulated photoreactor for the degradation of phenol.« less

  4. Synthesis and Characterization of PhotocatalyticTiO2-ZnFe2O4Nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.

    2006-01-01

    A new coprecipitation/hydrolysis synthesis route is used to create aTiO2-ZnFe2O4nanocomposite that is directed towards extending the photoresponse ofTiO2from UV to visible wavelengths (>400?nm). The effect ofTiO2's accelerated anatase-rutile phase transformation due to the presence of the coupledZnFe2O4narrow-bandgap semiconductor is evaluated. The transformation's dependence on pH, calcinations temperature, particle size, andZnFe2O4concentration has been analyzed using XRD, SEM, and UV-visible spectrometry. The requirements for retaining the highly photoactive anatase phase present in aZnFe2O4nanocomposite are outlined. The visible-light-activated photocatalytic activity of theTiO2-ZnFe2O4nanocomposites has been compared to an AldrichTiO2reference catalyst, using a solar-simulated photoreactor formorethe degradation of phenol.less

  5. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    SciTech Connect (OSTI)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  6. Synthesis of Uniformly Distributed Single- and Double-sided Zinc Oxide (ZnO) Nanocombs

    SciTech Connect (OSTI)

    Petford-Long, Amanda K.; Liu, Yuzi; Altintas Yildirim, Ozlem

    2015-11-15

    Uniformly distributed single- and double-sided zinc oxide (ZnO) nanocomb structures have been prepared by a vapor-liquid-solid technique from a mixture of ZnO nanoparticles and graphene nanoplatelets. The ZnO seed nanoparticles were synthesized via a simple precipitation method. The structure of the ZnO nanocombs could easily be controlled by tuning the carrier-gas flow rate during growth. Higher flow rate resulted in the formation of uniformly-distributed single-sided comb structures with nanonail-shaped teeth, as a result of the self-catalysis effect of the catalytically active Zn-terminated polar (0001) surface. Lower gas flow rate was favorable for production of double-sided comb structures with the two sets of teeth at an angle of similar to 110 degrees to each other along the comb ribbon, which was attributed to the formation of a bicrystal nanocomb ribbon. The formation of such a double-sided structure with nanonail-shaped teeth has not previously been reported.

  7. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect (OSTI)

    Kovcs, A.; Duchamp, M.; Boothroyd, C. B.; Dunin-Borkowski, R. E.; Ney, A.; Ney, V.; Galindo, P. L.; Kaspar, T. C.; Chambers, S. A.

    2013-12-28

    We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al{sub 2}O{sub 3}), as well as the Co:ZnO/Al{sub 2}O{sub 3} interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 34 Co:ZnO layers next to the Al{sub 2}O{sub 3} substrate. The stacking fault density is in the range of 10{sup 17} cm{sup ?3}. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties.

  8. Visible light plasmonic heating of Au-ZnO for the catalytic reduction of CO2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Congjun; Ranasingha, Oshadha; Natesakhawat, Sittichai; Ohodnicki, Paul R.; Andio, Mark; Lewis, James P.; Matranga, Christopher

    2013-01-01

    Plasmonic excitation of Au nanoparticles attached to the surface of ZnO catalysts using low power 532 nm laser illumination leads to significant heating of the catalyst and the conversion of CO2 and H2 reactants to CH4 and CO products. Temperature-calibrated Raman spectra of ZnO phonons show that intensity-dependent plasmonic excitation can controllably heat Au–ZnO from 30 to ~600 °C and simultaneously tune the CH4 : CO product ratio. The laser induced heating and resulting CH4 : CO product distribution agrees well with predictions from thermodynamic models and temperature-programmed reaction experiments indicating that the reaction is a thermally driven process resultingmore » from the plasmonic heating of the Au-ZnO. The apparent quantum yield for CO2 conversion under continuous wave (cw) 532 nm laser illumination is 0.030%. The Au-ZnO catalysts are robust and remain active after repeated laser exposure and cycling. The light intensity required to initiate CO2 reduction is low ( ~2.5 x 105 W m-2) and achievable with solar concentrators. Our results illustrate the viability of plasmonic heating approaches for CO2 utilization and other practical thermal catalytic applications.« less

  9. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; Watkins, S. P.

    2016-03-18

    Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

  10. Size and grain morphology dependent magnetic behaviour of Co-doped ZnO

    SciTech Connect (OSTI)

    Vagadia, Megha; Ravalia, Ashish; Khachar, Uma; Solanki, P.S.; Doshi, R.R.; Rayaprol, S.; Kuberkar, D.G.

    2011-11-15

    Highlights: {yields} Structure and magnetic studies on Co-doped ZnO. {yields} Synthesis method dependent comparison of magnetic properties. {yields} Grain size and morphology affect the magnetic properties of Co-doped ZnO. -- Abstract: We have carried out a comparative study of structural, microstructural and magnetic properties of the two sets of Co-doped ZnO samples synthesized using solid state reaction and sol-gel method. Rietveld refinement of the X-ray diffraction data reveals single phase hexagonal wurtzite structure for all the samples, while the tunnelling electron microscopy measurements show the presence of nano-phase in the sol-gel grown Co-doped ZnO samples. It is found that, the microstructure strongly depends on the synthesis method adopted. Samples with higher Co-concentration synthesized by SSR route exhibit antiferromagnetism while SG grown Co-doped ZnO samples exhibit weak ferromagnetic behaviour. Improved magnetic phase in the SG grown samples has been attributed to the grain morphology.

  11. Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment

    SciTech Connect (OSTI)

    Cai, P. F.; You, J. B.; Zhang, X. W.; Dong, J. J.; Yang, X. L.; Yin, Z. G.; Chen, N. F.

    2009-04-15

    We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO:H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO:H films achieves the order of 10{sup -3} OMEGA cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V{sub O}-H complex and the interstitial hydrogen H{sub i}. Moreover, the annealing data indicate that H{sub i} is unstable in ZnO, while the V{sub O}-H complex remains stable on the whole at 400 deg. C, and the latter diffuses out when the annealing temperature increases to 500 deg. C. These results make ZnO:H more attractive for future applications as transparent conducting electrodes.

  12. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect (OSTI)

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  13. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  14. A Novel and Functional Single-Layer Sheet of ZnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jia; Sumpter, Bobby G.; Kent, Paul R. C.; Huang, Jingsong

    2014-12-23

    In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

  15. Effect of Fe doping concentration on photocatalytic activity of ZnO nanosheets under natural sunlight

    SciTech Connect (OSTI)

    Khokhra, Richa; Kumar, Rajesh

    2015-05-15

    A facile room temperature, aqueous solution-based chemical method has been adopted for large-scale synthesis of Fe doped ZnO nanosheets. The XRD and SEM results reveal the as-synthesized products well crystalline and accumulated by large amount of interweave nanosheets, respectively. Energy dispersive spectroscopy data confirmed Fe doping of the ZnO nanosheets with a varying Fe concentration. The photoluminescence spectrum reveals a continuous suppression of defect related emissions intensity by increasing the concentration of the Fe ion. A photocatalytic activity using these samples under sunlight irradiation in the mineralization of methylene blue dye was investigated. The photocatalytic activity of Fe doped ZnO nanosheets depends upon the presence of surface oxygen vacancies.

  16. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect (OSTI)

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  17. Structural and photoluminescence properties of Ce, Dy, Er-doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Jayachandraiah, C.; Kumar, K. Siva; Krishnaiah, G.

    2015-06-24

    Undoped ZnO and rare earth elements (Ce, Dy and Er with 2 at. %) doped nanoparticles were synthesized by wet chemical co-precipitation method at 90°C with Polyvinylpyrrolidone (PVP) as capping agent. The structural, morphological, compositional and photoluminescence studies were performed with X-ray diffraction (XRD), Transmission electron microscopy (TEM), Energy dispersive spectroscopy (EDS), FTIR spectroscopy and Photoluminescence (PL) respectively. XRD results revealed hexagonal wurtzite structure with average particle size around 18 nm - 14 nm and are compatible with TEM results. EDS confirm the incorporation of Ce, Dy and Er elements into the host ZnO matrix and is validated by FTIR analysis. PL studies showed a broad intensive emission peak at 558 nm in all the samples. The intensity for Er- doped ZnO found maximum with additional Er shoulder peaks at 516nm and 538 nm. No Ce, Dy emission centers were found in spectra.

  18. Distinct water activation on polar/non-polar facets of ZnO nanoparticles

    SciTech Connect (OSTI)

    Zhang, He; Sun, Junming; Liu, Changjun; Wang, Yong

    2015-11-01

    ZnO nanoparticles with differing dominant facets were prepared and characterized by a complimentary of techniques such as X-ray diffraction, electron microscopy, temperature programmed desorption of H2O, and Fourier transform infrared spectroscopy analysis of adsorbed D2O. For the first time, water interaction/activation is compared on ZnO polar and non-polar facets. We report that non-polar facets exhibit high activity in water activation, which favors reactions such as ketonization and steam reforming in which dissociated water is involved. The distinct water dissociation on ZnO non-polar facets could be related to its facile formation of oxygen vacancies under realistic reaction conditions.

  19. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    SciTech Connect (OSTI)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-12-04

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.

  20. ZnO/Ag composite nanorod arrays for surface-plasmon-enhanced emission study

    SciTech Connect (OSTI)

    Pal, Anil Kumar E-mail: d.bharathimohan@gmail.com; Mohan, D. Bharathi E-mail: d.bharathimohan@gmail.com

    2014-04-24

    The surface plasmon resonance enhanced emission through coupling of surface plasmons and exciton band energies is studied in hybrid ZnO/Ag nanostructure. The catalytic growth of ZnO nanorods is controlled in seed mediated growth by altering size distribution of Ag nanoislands. X-ray diffraction shows a predominant (002) crystal plane confirming the preferential growth of ZnO nanorods on as-deposited Ag. Increase of surface roughness in Ag film by post deposition annealing process enhances the light emission due to momentum matching between surface plasmons and excitons as well as a red shift of 32 meV occurs due to multi phonon and phonon-exciton interaction.

  1. Nanoscale mapping of plasmon and exciton in ZnO tetrapods coupled with Au nanoparticles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertoni, Giovanni; Fabbri, Filippo; Villani, Marco; Lazzarini, Laura; Turner, Stuart; Van Tendeloo, Gustaaf; Calestani, Davide; Gradečak, Silvija; Zappettini, Andrea; Salviati, Giancarlo

    2016-01-12

    Metallic nanoparticles can be used to enhance optical absorption or emission in semiconductors, thanks to a strong interaction of collective excitations of free charges (plasmons) with electromagnetic fields. Herein we present direct imaging at the nanoscale of plasmon-exciton coupling in Au/ZnO nanostructures by combining scanning transmission electron energy loss and cathodoluminescence spectroscopy and mapping. The Au nanoparticles (~30 nm in diameter) are grown in-situ on ZnO nanotetrapods by means of a photochemical process without the need of binding agents or capping molecules, resulting in clean interfaces. Interestingly, the Au plasmon resonance is localized at the Au/vacuum interface, rather than presentingmore » an isotropic distribution around the nanoparticle. Moreover, on the contrary, a localization of the ZnO signal has been observed inside the Au nanoparticle, as also confirmed by numerical simulations.« less

  2. On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process

    SciTech Connect (OSTI)

    Hu, Q. C.; Ding, K. Zhang, J. Y.; Yan, F. P.; Pan, D. M.; Huang, F.; Chiou, J. W.

    2014-01-13

    We have investigated the variations of optical property and electronic structure in heavily Al-doped ZnO (AZO) films during the growth process, which were formed by first creating Zn vacancies in O{sub 2}-rich atmosphere and second filling the vacancies with Zn atoms in Zn-vapor atmosphere. After the first step, the high-resistance AZO films have the same optical bandgap with nominally undoped ZnO, indicating that negligible variations in the fundamental bandgap happened to the AZO films although Al atom was incorporated into the ZnO lattice. After the second step, once free electrons were brought into the lattice by Zn-filling, the optical transition energy blueshifts due to the band-filling effect. X-ray absorption fine structure measurements suggest that Zn-filling process decreased the unoccupied states of the conduction band, but not raised the conduction band minimum.

  3. Study of difference in interfacial reaction at Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} heterostructure using synchrotron radiation

    SciTech Connect (OSTI)

    Wadikar, A. D. Master, Ridhi Choudhary, R. J. Phase, D. M.

    2014-04-24

    We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed a change in the density of states near the Fermi level in valence band spectra in case of Fe{sub 3}O{sub 4}/ZnO bilayer when compared to that of ZnO/Fe{sub 3}O{sub 4}. Nonlinear current–voltage (I-V) characteristics were observed in both the samples confirmed that these bilayer structures can be used for spintronic application.

  4. OT SPECIFIED I OTHER AMENDMENT OF SOLICITATI ON/MODIFICATION...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MODIFIC ATION OF CO NTRACTIORD ER NO A DE-AC05 - 060R 23 100 l OB DATED (SEE ITEM 13) 12 21 2005 11 . THIS ITEM ONLY APPLIES TO AMENDMENTS OF SOLICITA TI ONS L the above numbered...

  5. James L. Liveman, Acting AssLBtaOt

    Office of Legacy Management (LM)

    SD:ZTJ cc: B. ' veen, UL w. Smith, Am ' A. Baker, Utivc-oity of Nevada W. E. Not:, ECT, EQ Robert H. Bauc xanager . ' bc: OX , OFFICE SfiEfm,r SAFE -, -*-r SURNAME ias ce --&%y ...

  6. Treatability study Number PDC-1-O-T. Final report

    SciTech Connect (OSTI)

    1998-04-22

    Los Alamos National Laboratory provided treatability study samples from four waste streams, designated Stream {number_sign}1, Stream {number_sign}3, Stream {number_sign}6, and Stream {number_sign}7. Stream {number_sign}1 consisted of one 55-gallon drum of personal protective equipment (PPE), rags, and neutralizing agent (bicarbonate) generated during the cleanup of a sodium dichromate solution spill. Stream {number_sign}3 was one 55-gallon drum of paper, rags, lab utensils, tools, and tape from the decontamination of a glovebox. The sample of Stream {number_sign}6 was packaged in three 30-gallon drums and a 100 ft{sup 3} wooden box. It consisted of plastic sheeting, PPE, and paper generated from the cleanup of mock explosive (barium nitrate) from depleted uranium parts. Stream {number_sign}7 was scrap metal (copper, stainless and carbon steel joined with silver solder) from the disassembly of gas manifolds. The objective of the treatability study is to determine: (1) whether the Perma-Fix stabilization/solidification process can treat the waste sample to meet Land Disposal Restrictions and the Waste Acceptance Criteria for LANL Technical Area 54, Area G, and (2) optimum loading and resulting weight and volume of finished waste form. The stabilized waste was mixed into grout that had been poured into a lined drum. After each original container of waste was processed, the liner was closed and a new liner was placed in the same drum on top of the previous closed liner. This allowed an overall reduction in waste volume but kept waste segregated to minimize the amount of rework in case analytical results indicated any batch did not meet treatment standards. Samples of treated waste from each waste stream were analyzed by Perma-Fix Analytical Services to get a preliminary approximation of TCLP metals. Splits of these samples were sent to American Environmental Network`s mixed waste analytical lab in Cary, NC for confirmation analysis. Results were all below applicable limits.

  7. Surface Modification of ZnO Using Triethoxysilane-Based Molecules

    SciTech Connect (OSTI)

    Allen, C. G.; Baker, D. J.; Albin, J. M.; Oertli, H. E.; Gillaspie, D. T.; Olson, D. C.; Furtak, T. E.; Collins, R. T.

    2008-12-01

    Zinc oxide (ZnO) is an important material for hybrid inorganic-organic devices in which the characteristics of the interface can dominate both the structural and electronic properties of the system. These characteristics can be modified through chemical functionalization of the ZnO surface. One of the possible strategies involves covalent bonding of the modifier using silane chemistry. Whereas a significant body of work has been published regarding silane attachments to glass and SiO{sub 2}, there is less information about the efficacy of this method for controlling the surface of metal oxides. Here we report our investigation of molecular layers attached to polycrystalline ZnO through silane bonding, controlled by an amine catalyst. The catalyst enables us to use triethoxysilane precursors and thereby avoid undesirable multilayer formation. The polycrystalline surface is a practical material, grown by sol-gel processing, that is under active exploration for device applications. Our study included terminations with alkyl and phenyl groups. We used water contact angles, infrared spectroscopy, and X-ray photoemission spectroscopy to evaluate the modified surfaces. Alkyltriethoxysilane functionalization of ZnO produced molecular layers with submonolayer coverage and evidence of disorder. Nevertheless, a very stable hydrophobic surface with contact angles approaching 106{sup o} resulted. Phenyltriethoxysilane was found to deposit in a similar manner. The resulting surface, however, exhibited significantly different wetting as a result of the nature of the end group. Molecular layers of this type, with a variety of surface terminations that use the same molecular attachment scheme, should enable interface engineering that optimizes the chemical selectivity of ZnO biosensors or the charge-transfer properties of ZnO-polymer interfaces found in oxide-organic electronics.

  8. Structural- and optical-property characterization of three-dimensional branched ZnO nanospikes

    SciTech Connect (OSTI)

    Chia, M.Y.; Chiu, W.S.; Daud, S.N.H.; Khiew, P.S.; Radiman, S.; Abd-Shukor, R.; Hamid, M.A.A.

    2015-08-15

    Current study reports the synthesis of three-dimensional (3-D) ZnO nanospikes with anomalous optical property, where zinc stearate is adopted as a safe, common and low-cost precursor that undergoes thermal pyrolysis under non-hydrolytic approach. High resolution transmission electron microscope (HRTEM) and scanning electron microscope (SEM) result show that the as-synthesized 3-D ZnO nanospikes are constructed by bundle of nanorods that sprout radially outwards in random orientation. The possible growth mechanism is discussed by referring to the microscopy results. X-ray diffraction (XRD) pattern confirms that the nanospikes are highly crystalline, which existed in hexagonal wurtzite crystal structure. Optical absorption characterization shows that the onset absorption for the nanospikes is slightly red-shifted if compared to commercial ZnO and the corresponding bandgap energy is estimated to be 3.1 eV. The photoluminescene (PL) result of ZnO nanospikes indicate that its optical emission exhibits weak UV emission but very intense visible-light emission that ranged from green- up to red-region. The factors that contributed to the intriguing PL characteristic are discussed. Current finding would offer a versatile synthesis scheme in engineering advanced nanostructures with new design that exhibit congruent optical property. - Graphical abstract: Display Omitted - Highlights: • Pyrolysis of zinc stearate in synthesizing 3-D ZnO nanospikes • ZnO nanospikes possess bundle of nanorods that sprout out from the hexagonal stump • Growth mechanism is deduced to elucidate the morphological evolution from nanobullet to nanospike with branching topology • PL spectrum indicate that the nanospike exhibit prominent visible-light emission that ranged from green- to red-region.

  9. ZnO Nanorod Thermoplastic Polyurethane Nanocomposites: Morphology and Shape Memory Performance

    SciTech Connect (OSTI)

    Koerner, H.; Kelley, J; George, J; Drummy, L; Mirau, P; Bell, N; Hsu, J; Vaia, R

    2009-01-01

    The impact of dispersed alkylthiol-modified ZnO nanorods, as a function of rod aspect ratio and concentration, on the shape memory character of a thermoplastic polyurethane with low hard-segment density (LHS-TPU) is examined relative to the enhanced performance occurring for carbon nanofiber (CNF) dispersion. Solution blending resulted in uniform dispersion within the LHS-TPU of the ZnO nanorods at low volume (weight) fractions (<2.9% v/v (17.75% w/w)). Tensile modulus enhancements were modest though, comparable to values observed for spherical nanofillers. Shape memory characteristics, which in this LHS-TPU result when strain-induced crystallites retard the entropic recovery of the deformed chains, were unchanged for these low volume fraction ZnO nanocomposites. Higher ZnO loadings (12% v/v (50% w/w)) exhibited clustering of ZnO nanorods into a mesh-like structure. Here, tensile modulus and shape recovery characteristics were improved, although not as great as seen for comparable CNF addition. Wide angle X-ray diffraction and NMR revealed that the addition of ZnO nanorods did not impact the inherent strain induced crystallization of the LHS-TPU, which is in contrast to the impact of CNFs and emphasizes the impact of interactions at the polymer-nanoparticle interface. Overall, these findings reinforce the hypothesis that the shape memory properties of polymer nanocomposites are governed by the extent to which nanoparticle addition, via nanoparticle aspect ratio, hierarchical morphology, and interfacial interactions, impacts the molecular mechanism responsible for trapping elastic strain.

  10. Characteristics of ZnO nanostructures produced with [DMIm]BF{sub 4} using ultrasonic radiation

    SciTech Connect (OSTI)

    Rahman, I. B. Abdul; Ayob, M. T. M.; Ishak, I. S.; Mohd Lawi, R. L.; Isahak, W. N. R. W.; Hamid, M. H. N. Abd; Othman, N. K.; Radiman, S.

    2012-11-27

    Great interests in metallic oxides have emerged because of the promising properties of these materials for various applications such as solar cells and sensors. ZnO nanostructures with different morphologies were successfully synthesized from Zn(CH{sub 3}COO){sub 2} Bullet 2H{sub 2}O, NaOH and room temperature ionic liquid (RTIL) 1-decyl-3-methylimidazolium tetrafluoroborate, [DMIm][BF{sub 4}] with ultrasound irradiation. Parameters such as the effect of sonication time (30, 60 and 90 minutes) and Zn(Ac){sub 2} precursor to [DMIm][BF{sub 4}] ratios of 3:5, 5:5 and 5:3 were investigated. X-ray diffraction patterns revealed that the ZnO nanocrystals were hexagonal zincite crystalline in structure. The band gap energies (E{sub g}) were estimated to be 3.35-3.55 eV from the UV-Visible spectrum. The solution with the highest ratio of Zn was analysed with photoluminescence spectroscopy, which exhibited peaks at 362, 403, 468 and 539 nm, at room temperature. The micrographs of field emission scanning electron microscopy and transmission electron microscopy showed that the synthesis products were spherical (30-60 nm), spindle ({approx}10 Multiplication-Sign 70 nm for width Multiplication-Sign length) and whisker-like (100-200 nm), with their dimensions decreasing systematically with increased sonication time. Chemical compositions were approximated at 1:1 for Zn and O, estimated by electron dispersive x-ray spectrum.

  11. Investigation of intrinsic and extrinsic defects effective role on producing intense red emission in ZnO:Eu nanostructures

    SciTech Connect (OSTI)

    Najafi, Mehrdad Haratizadeh, Hamid

    2015-05-15

    Highlights: • Effective role of defects on producing red emission at indirect excitation. • V{sub Zn} and V{sub O} defects have important role on energy transfer. • Mg related defects and Zn{sub i} defects were responsible for blue emission. • Extrinsic and intrinsic defects mediated energy transfer to sensitize Eu{sup 3+} ions. • Decrease of red emission because of diminishing in oxygen vacancy. - Abstract: Europium doped ZnO nanorads and nanosheets were synthesized by hydrothermal method. Effects of Mg doping, morphology and annealing in oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), particle size analysis (PSA), thermo gravimetric analysis (TGA), differential thermal analysis (DTA), differential thermo gravimetry (DTG), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Eu{sup 3+} ions and consequently have efficient role on producing intense red emission at indirect excitation. The results also showed that annealing process improved the crystal structure of ZnO nanosheets due to decrease of surface defects; however decreased ET and red emission because of diminishing in oxygen vacancy. In addition in ZnO nanorods sample with more surface area in comparison with ZnO nanosheets sample deep level emissions are enhanced.

  12. Study of Even-Even/Odd-Even/Odd-Odd Nuclei in Zn-Ga-Ge Region in the Proton-Neutron IBM/IBFM/IBFFM

    SciTech Connect (OSTI)

    Yoshida, N.; Brant, S.; Zuffi, L.

    2009-08-26

    We study the even-even, odd-even and odd-odd nuclei in the region including Zn-Ga-Ge in the proton-neutron IBM and the models derived from it: IBM2, IBFM2, IBFFM2. We describe {sup 67}Ga, {sup 65}Zn, and {sup 68}Ga by coupling odd particles to a boson core {sup 66}Zn. We also calculate the beta{sup +}-decay rates among {sup 68}Ge, {sup 68}Ga and {sup 68}Zn.

  13. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

    SciTech Connect (OSTI)

    Simmons, Jay G.; Liu, Jie; Foreman, John V.; Everitt, Henry O.

    2013-11-11

    The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.

  14. Preparation and characterization of nanodiamond cores coated with a thin Ni-Zn-P alloy film

    SciTech Connect (OSTI)

    Wang Rui; Ye Weichun; Ma Chuanli; Wang Chunming

    2008-02-15

    Nanodiamond cores coated with a thin Ni-Zn-P alloy film were prepared by an electroless deposition method under the conditions of tin chloride sensitization and palladium chloride activation. The prepared materials were analyzed by Fourier transform infrared (FTIR) spectrometry and X-ray diffraction (XRD). The nanostructure of the materials was then characterized by transmission electron microscopy (TEM). The alloy film composition was characterized by Energy Dispersive X-ray (EDX) analysis. The results indicated the approximate composition 49.84%Ni-37.29%Zn-12.88%P was obtained.

  15. CASL - Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Density functional theory calculations Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds: Density functional theory calculations Mixing and non-stoichiometry in Fe-Ni-Cr-Zn-O spinel compounds: Density functional theory calculations D.A. Andersson and C.R. Stanek Materials Science and Technology Division Los Alamos National Laboratory Density functional theory (DFT) calculations have been employed to better understand the thermodynamic properties of AB2O4 (where A=Fe2+, Ni2+ or

  16. Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boichot, R.; Tian, L.; Richard, M. -I.; Crisci, A.; Chaker, A.; Cantelli, V.; Coindeau, S.; Lay, S.; Ouled, T.; Guichet, C.; et al

    2016-01-05

    In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

  17. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect (OSTI)

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  18. Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Andelman, Tamar; Gong, Yinyan; Neumark, Gertrude; O'Brien, Stephen

    2007-01-01

    A novel solution method to control the diameter of ZnO nanorods is reported. Small diameter (2-3 nm) nanorods were synthesized from trihexylamine, and large diameter (50–80 nm) nanorods were synthesized by increasing the alkyl chain length to tridodecylamine. The defect (green) emission of the photoluminescence (PL) spectra of the nanorods varies with diameter, and can thus be controlled by the diameter control. The small ZnO nanorods have strong green emission, while the large diameter nanorods exhibit a remarkably suppressed green band. We show that this observation supports surface oxygen vacancies as the defect that gives rise to the green emission.

  19. Interaction of light with the ZnO surface: Photon induced oxygen breathing, oxygen vacancies, persistent photoconductivity, and persistent photovoltage

    SciTech Connect (OSTI)

    Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan

    2014-01-21

    ZnO surfaces adsorb oxygen in the dark and emit CO{sub 2} when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO{sub 2}. The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called green luminescence in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy

  20. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

    SciTech Connect (OSTI)

    Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Pimentel, Ana C.M.B.G.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N.

    2004-09-27

    We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm{sup 2}/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10{sup 5}. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

  1. Structurally ordered Pt–Zn/C series nanoparticles as efficient anode catalysts for formic acid electrooxidation

    SciTech Connect (OSTI)

    Zhu, Jing; Zheng, Xin; Wang, Jie; Wu, Zexing; Han, Lili; Lin, Ruoqian; Xin, Huolin L.; Wang, Deli

    2015-09-15

    Controlling the size, composition, and structure of bimetallic nanoparticles is of particular interest in the field of electrocatalysts for fuel cells. In the present work, structurally ordered nanoparticles with intermetallic phases of Pt3Zn and PtZn have been successfully synthesized via an impregnation reduction method, followed by post heat-treatment. The Pt3Zn and PtZn ordered intermetallic nanoparticles are well dispersed on a carbon support with ultrasmall mean particle sizes of ~5 nm and ~3 nm in diameter, respectively, which are credited to the evaporation of the zinc element at high temperature. These catalysts are less susceptible to CO poisoning relative to Pt/C and exhibited enhanced catalytic activity and stability toward formic acid electrooxidation. The mass activities of the as-prepared catalysts were approximately 2 to 3 times that of commercial Pt at 0.5 V (vs. RHE). As a result, this facile synthetic strategy is scalable for mass production of catalytic materials.

  2. High Resolution Characterization of the Precipitation Behavior of an Al-Zn-Mg-Cu alloy

    SciTech Connect (OSTI)

    Li, Yi-Yun; Kovarik, Libor; Phillips, Patrick J.; Hsu, Yung-Fu; Wang, Wen-Hsiung; Mills, Michael J.

    2012-04-01

    The metastable particles in an Al-Zn-Mg-Cu alloy have been examined at atomic-resolution using high-angle annular dark field (HAADF) imaging. In underaged conditions, thin {eta}' plates were formed with a thickness of 7 atomic planes parallel to the {l_brace}111{r_brace}Al planes. The five inner planes of the {eta}' phase appear to be alternatively enriched in Mg and Zn, with two outer planes forming distinct Zn-rich interfacial planes. Similar Zn rich interfacial enrichment has also been identified for the {eta} phase, which is a minimum 11-planes thick structure. In rare instances, particles less than 7 planes were found indicating a very early preference for 7-layer particle formation. Throughout the aging, the plate thickness appears constant, while the plate radius increases and no particles between 7 and 11 planes were observed. Based on the HAADF contrast, our observations do not support the {eta}' models previously set forth by other authors. Clear structural similarities between {eta}' and {eta} were observed, suggesting that drawing distinctions between {eta}' and {eta} phases may not be necessary or useful.

  3. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    SciTech Connect (OSTI)

    Chowdhury, S. Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-12-01

    The present study compares structural and optical modifications of bare and silica (SiO{sub 2}) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni{sup 12+} ion beam with fluences 10{sup 12} to 10{sup 13} ions/cm{sup 2}. Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.

  4. Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

    DOE Patents [OSTI]

    Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

    2006-07-25

    A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

  5. ZnO-PVA nanocomposite films for low threshold optical limiting applications

    SciTech Connect (OSTI)

    Viswanath, Varsha; Beenakumari, C.; Muneera, C. I.

    2014-10-15

    Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages (<1.2 wt%) of ZnO in PVA (∼0.625×10{sup −3}M to 7×10{sup −3}M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |χ{sup (3)}|, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices.

  6. Structurally ordered Pt–Zn/C series nanoparticles as efficient anode catalysts for formic acid electrooxidation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Jing; Zheng, Xin; Wang, Jie; Wu, Zexing; Han, Lili; Lin, Ruoqian; Xin, Huolin L.; Wang, Deli

    2015-09-15

    Controlling the size, composition, and structure of bimetallic nanoparticles is of particular interest in the field of electrocatalysts for fuel cells. In the present work, structurally ordered nanoparticles with intermetallic phases of Pt3Zn and PtZn have been successfully synthesized via an impregnation reduction method, followed by post heat-treatment. The Pt3Zn and PtZn ordered intermetallic nanoparticles are well dispersed on a carbon support with ultrasmall mean particle sizes of ~5 nm and ~3 nm in diameter, respectively, which are credited to the evaporation of the zinc element at high temperature. These catalysts are less susceptible to CO poisoning relative to Pt/Cmore » and exhibited enhanced catalytic activity and stability toward formic acid electrooxidation. The mass activities of the as-prepared catalysts were approximately 2 to 3 times that of commercial Pt at 0.5 V (vs. RHE). As a result, this facile synthetic strategy is scalable for mass production of catalytic materials.« less

  7. Significant mobility enhancement in extremely thin highly doped ZnO films

    SciTech Connect (OSTI)

    Look, David C.; Heller, Eric R.; Yao, Yu-Feng; Yang, C. C.

    2015-04-13

    Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μ{sub H} of 64.1, 43.4, 37.0, and 34.2 cm{sup 2}/V-s, respectively. This extremely unusual ordering of μ{sub H} vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm{sup 2}/V-s at the interface (z = d), falling to 58 cm{sup 2}/V-s at z = d + 2 nm. Excellent fits to μ{sub H} vs d and sheet concentration n{sub s} vs d are obtained with no adjustable parameters.

  8. Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering

    SciTech Connect (OSTI)

    Chen, L.-Y.; Chen, W.-H.; Wang, J.-J.; Hong, Franklin Chau-Nan; Su, Y.-K.

    2004-12-06

    Hydrogen-doped zinc oxide (ZnO:H) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:H film was significantly reduced by the addition of H{sub 2} in Ar during rf sputtering. The electrical resistivity of ZnO:H films reached 2x10{sup -4} {omega} cm. The carrier concentration increased with increasing H{sub 2} concentration during deposition. X-ray diffraction results showed that the d{sub 0002} interplanar spacing increased with increasing H{sub 2} concentrations. The carrier concentration was significantly reduced in two orders of magnitude by increasing the substrate temperature from 150 to 250 deg. C during deposition. Both results suggested that the increase of carrier concentration by adding H{sub 2} during sputtering was due to the hydrogen donor rather than the oxygen vacancies in ZnO films, consistent with the theoretical predictions by Van de Walle. UV-visible spectroscopy further showed that the transmittance is high up to 100% in the visible range. The band gap determined by optical absorption increased with increasing H{sub 2} composition. The phenomenon is interpreted as the filling of conduction band by electrons in n-type semiconductor.

  9. XRD, Photoluminescence and Optical Absorption Investigations of Cobalt-doped ZnO

    SciTech Connect (OSTI)

    Sujinnapram, Supphadate; Onreabroy, Wandee; Nantawisarakul, Tuangrak

    2009-07-07

    Zn{sub 1-x}Co{sub x}O(with x = 0, 0.01, 0.10 and 0.20) were synthesized by solid-state reaction method sintered at 600 deg. C for 12 hours. The samples were studied by X-ray diffraction (XRD), optical absorption (UV-Vis) and Photoluminescence (PL). Structural analysis by Rietveld method using XRD showed that the peaks of secondary phase Co{sub 3}O{sub 4} with a cubic structure were visible in the high-doped sample (x = 0.1, 0.2), besides the main peaks of wurtzite-like structure the same as that of ZnO. Shift of the XRD peaks proved the incorporation of Co{sup 2+} into the ZnO lattice. The band gap energy decreased from 3.18 to 3.14 eV with the increasing of cobalt concentration. PL spectra at room temperature showed the blue emission with the peak around 412 nm. In addition, the intensity of the blue emission decreased upon increasing the Co concentration, which indicated their high structural, defects and optical quality in the ZnO.

  10. Ab initio investigation on hydrogen adsorption capability in Zn and Cu-based metal organic frameworks

    SciTech Connect (OSTI)

    Tanuwijaya, V. V.; Hidayat, N. N. Agusta, M. K. Dipojono, H. K.

    2015-09-30

    One of the biggest challenge in material technology for hydrogen storage application is to increase hydrogen uptake in room temperature and pressure. As a class of highly porous material, Metal-Organic Frameworks (MOF) holds great potential with its tunable structure. However, little is known about the effect of metal cluster to its hydrogen storage capability. Investigation on this matter has been carried out carefully on small cluster of Zn and Cu-based MOF using first principles method. The calculation of two distinct building units of MOFs, namely octahedral and paddle-wheel models, have been done with B3LYP density functional method using 6-31G(d,p) and LANL2DZ basis sets. From geometry optimization of Zn-based MOF linked by benzene-dicarboxylate (MOF-5), it is found that hydrogen tends to keep distance from metal cluster group and stays above benzene ring. In the other hand, hydrogen molecule prefers to stay atop of the exposed Cu atom in Cu-based MOF system linked by the same linker group (Cu-bdc). Calculated hydrogen binding enthalpies for Zn and Cu octahedral cages at ZnO{sub 3} sites are 1.64kJ/mol and 2.73kJ/mol respectively, while hydrogen binding enthalpies for Zn and Cu paddle-wheel cages calculated on top of metal atoms are found to be at 6.05kJ/mol and 6.10kJ/mol respectively. Major difference between Zn-MOF-5 and Cu-bdc hydrogen uptake performance might be caused by unsaturated metal sites present in Cu-bdc system and the influence of their geometric structures, although a small difference on binding energy in the type of transition metal used is also observed. The comparison between Zn and Cu-based MOF may contribute to a comprehensive understanding of metal clusters and the importance of selecting best transition metal for design and synthesis of metal-organic frameworks.

  11. Hydrothermal Synthesis and Structural Characterization of Novel Zn-Triazole-Benzenedicarboxylate Frameworks

    SciTech Connect (OSTI)

    Park, Hyunsoo; Moureau, David M.; Parise, John B.

    2008-10-03

    Three new metal-organic coordination polymers were synthesized hydrothermally using Zn2+ ion, 1,2,4-triazole, and 1,4-benzenedicarboxylic acid (BDC): Zn5(H2O)2(C2H2N3)4(C8H4O4)3 {center_dot} 3.9H2O (1), Zn2(C2H2N3)2(C2H3N3)(C8H4O4) {center_dot} 2.5H2O (2), and Zn4(H2O)2(C2H2N3)4(C8H4O4)2 {center_dot} 14H2O (3). Their crystal structures were determined by single-crystal X-ray diffraction. Their thermal properties were examined by thermogravimetric analysis. Structure 1 crystallizes in the monoclinic P21/n space group with a = 10.192(2) {angstrom}, b = 17.764(4) {angstrom}, c = 24.437(5) {angstrom}, {beta} = 91.19(3){sup o}, and V = 4423.3(15) {angstrom}3. Structure 2 crystallizes in the triclinic P space group with a = 7.797(2) {angstrom}, b = 10.047(2) {angstrom}, c = 13.577(3) {angstrom}, {alpha} = 110.18(3){sup o}, {beta} = 105.46(3){sup o}, {gamma} = 93.90(3){sup o}, and V = 947.0(3) {angstrom}3. Structure 3 crystallizes in monoclinic P21/n space group with a = 13.475(3) {angstrom}, b = 26.949(5) {angstrom}, c = 13.509(3) {angstrom}, {beta} = 95.18(3){sup o}, and V = 4885.7(17) {angstrom}3. In structure 1, the units of the triazole-Zn polyhedra are linked by BDC in a zigzag fashion to create the stacking of phenyl groups along the a axis. In structure 2, both triazole and BDC bridge Zn polyhedra in the (011) plane, resulting in the eight-membered channels along the a axis. In the case of structure 3, the BDC links the Zn polyhedra along the b axis to form a pillared open framework. This structure is the most porous of the compounds presented in this work.

  12. Single-step in-situ synthesis and optical properties of ZnSe nanostructured dielectric nanocomposites

    SciTech Connect (OSTI)

    Dey, Chirantan; Rahaman Molla, Atiar; Tarafder, Anal; Karmakar, Basudeb; Kr Mishra, Manish; De, Goutam; Goswami, Madhumita; Kothiyal, G. P.

    2014-04-07

    This work provides the evidence of visible red photoluminescent light emission from ZnSe nanocrystals (NCs) grown within a dielectric (borosilicate glass) matrix synthesized by a single step in-situ technique for the first time and the NC sizes were controlled by varying only the concentration of ZnSe in glass matrix. The ZnSe NCs were investigated by UV-Vis optical absorption spectroscopy, Raman spectroscopy, and transmission electron microscopy (TEM). The sizes of the ZnSe NCs estimated from the TEM images are found to alter in the range of 2–53 nm. Their smaller sizes of the NCs were also calculated by using the optical absorption spectra and the effective mass approximation model. The band gap enlargements both for carrier and exciton confinements were evaluated and found to be changed in the range of 0–1.0 eV. The Raman spectroscopic studies showed blue shifted Raman peaks of ZnSe at 295 and 315 cm{sup −1} indicating phonon confinement effect as well as compressive stress effect on the surface atoms of the NCs. Red photoluminescence in ZnSe-glass nanocomposite reveals a broad multiple-peak structure due to overlapping of emission from NC size related electron-hole recombination (∼707 nm) and emissions from defects to traps, which were formed due to Se and Zn vacancies signifying potential application in photonics.

  13. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  14. Synthesis of monodispersed ZnAl{sub 2}O{sub 4} nanoparticles and their tribology properties as lubricant additives

    SciTech Connect (OSTI)

    Song, Xiaoyun; Zheng, Shaohua; Zhang, Jun; Li, Wei; Chen, Qiang; Cao, Bingqiang

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► The preparation of ZnAl{sub 2}O{sub 4} nanoparticles was realized by hydrothermal method. ► After surface modification, ZnAl{sub 2}O{sub 4} nanoparticles of narrow size distribution can disperse in lubricating oil stably. ► The modified ZnAl{sub 2}O{sub 4} nanoparticles as lubricating oil additives exhibit good tribology properties. -- Abstract: Monodispersed spherical zinc aluminate spinel (ZnAl{sub 2}O{sub 4}) nanoparticles were synthesized via a solvothermal method and modified by oleic acid in cyclohexanol solution. The nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and infrared spectrum (IR). The dispersion ability of nanoparticles in lubricant oil was measured with optical absorbance spectrum. The results show that the modified nanoparticles are nearly monodispersed and can stably disperse in lubricant oil. The tribological properties of the ZnAl{sub 2}O{sub 4} nanoparticles as an additive in lubricant oil were evaluated with four-ball test and thrust-ring test. For comparison, ZnO and Al{sub 2}O{sub 3} nanoparticles as additive in lubricant oil were also tested respectively. The results show that ZnAl{sub 2}O{sub 4} nanoparticles exhibit better tribology properties in terms of anti-wear and anti-friction than ZnO or Al{sub 2}O{sub 3} nanoparticles. The anti-friction and anti-wear mechanisms were discussed and the lubricating effect of ZnAl{sub 2}O{sub 4} nanoparticles can be attributed to nano-bearings effect and tribo-sintering mechanism.

  15. The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

    2014-02-05

    The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

  16. Synthesis and anion exchange properties of a Zn/Ni double hydroxide salt with a guarinoite structure

    SciTech Connect (OSTI)

    Delorme, F.; Seron, A.; Licheron, M.; Veron, E.; Giovannelli, F.; Beny, C.; Jean-Prost, V.; Martineau, D.

    2009-09-15

    In this study, the first route to synthesize a compound with the guarinoite structure (Zn,Co,Ni){sub 6}(SO{sub 4})(OH,Cl){sub 10}.5H{sub 2}O is reported. Zn/Ni guarinoite is obtained from the reaction of NiSO{sub 4}.7H{sub 2}O with solid ZnO in aqueous solution. The resulting green Zn/Ni guarinoite ((Zn{sub 3.52}Ni{sub 1.63})(SO{sub 4}){sub 1.33}(OH{sub 7.64}).4.67H{sub 2}O) was characterized by X-ray diffraction, infrared spectrometry, UV-Visible spectrometry and thermal analysis. It is shown that its structure is similar to the one described for the layered Zn sulfate hydroxide hydrate, i.e. brucite layers with 1/4 empty octahedra presenting tetrahedrally coordinated divalent atoms above and below the empty octahedra. Ni atoms are located in the octahedra and zinc atoms in tetrahedra and octahedra. In this structure the exchangeable anions are located at the apex of tetrahedra. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show that the Zn/Ni guarinoite is composed of aggregates of hexagonal plates of several hundreds of nanometers. Due to its interest for industrial or environmental applications, the exchange of sulfate groups by carbonates has been investigated. Results show a limited exchange and a higher affinity of the Zn/Ni guarinoite for sulfates compared to carbonates. - Graphical abstract: SEM micrograph (secondary electrons) of the synthesized Zn/Ni guarinoite showing that aggregates are composed of small plate-like particles.

  17. Photocatalytic pure water splitting activities for ZnGa{sub 2}O{sub 4} synthesized by various methods

    SciTech Connect (OSTI)

    Zeng, Chunmei; Hu, Tao; Hou, Nianjun; Liu, Siyao; Gao, Wenliang; Cong, Rihong; Yang, Tao

    2015-01-15

    Highlights: High temperature solid state reaction, hydrothermal, sol-gel methods were applied. All ZnGa{sub 2}O{sub 4} samples show UV-light catalytic activities on pure water splitting. Bulk ZnGa{sub 2}O{sub 4} has a good photocatalytic activity per specific surface area. Sol-gel is a superior method to prepare nanosized ZnGa{sub 2}O{sub 4} with a high activity. The AQY for SG-ZnGa{sub 2}O{sub 4} is 2.6% for pure water splitting under 313 nm irradiation. - Abstract: We studied and compared the photocatalytic water splitting performances for ZnGa{sub 2}O{sub 4} prepared by high temperature solid state reaction (HTSSR), hydrothermal (HY) and sol-gel (SG) methods. HTSSR-ZnGa{sub 2}O{sub 4} has a relative large photocatalytic activity per surface area (1.6 ?mol/h/m{sup 2}) in pure water by UV irradiation due to its high crystallinity. The HY- and SG-samples both have small particle sizes (20?30 nm) and therefore high surface area (20 and 29 m{sup 2}/g, respectively), which leads to superior photocatalytic H{sub 2} evolution rates per unit mass (11.5 and 28.5 ?mol/h/g). The apparent quantum yield of SG-ZnGa{sub 2}O{sub 4} for pure water splitting under 313 nm irradiation is 2.6%. The existence of substantial surface defects is the major problem for HY- and SG-ZnGa{sub 2}O{sub 4}. Consequently, the usage of sacrificial agents could greatly enhance the activities and indeed the H{sub 2} evolution rates in 20 Vol. % methanol aqueous solution increase to 100 and 142 ?mol/h/g for HY- and SG-ZnGa{sub 2}O{sub 4}, respectively.

  18. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    SciTech Connect (OSTI)

    Sheeba, N. H.; Naduvath, J.; Abraham, A. Philip, R. R.; Weiss, M. P. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Diener, Z. J. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Remillard, S. K. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; DeYoung, P. A. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu

    2014-10-15

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  19. Zn-doped and undoped SnO{sub 2} nanoparticles: A comparative structural, optical and LPG sensing properties study

    SciTech Connect (OSTI)

    Mishra, R.K.; Sahay, P.P.

    2012-12-15

    Graphical abstract: The X-ray diffraction (XRD) analyses confirm that all the materials prepared are polycrystalline SnO{sub 2} possessing tetragonal rutile structure. On Zn-doping, the crystallite size has been found to decrease from 25 nm (undoped sample) to 13 nm (1 at% Zn-doped sample). Display Omitted Highlights: ? Zn-doped SnO{sub 2} nanoparticles show smaller crystallite size (1117 nm). ? Optical band gap in SnO{sub 2} nanoparticles increases on Zn-doping. ? 2 at% Zn-doped sample show minimum room temperature resistivity. ? LPG response of the Zn-doped SnO{sub 2} nanoparticles increases considerably. ? 1 at% Zn-doped sample shows maximum response (87%) at 300 C to 1 vol% concentration. -- Abstract: SnO{sub 2} nanoparticles were prepared by the co-precipitation method with SnCl{sub 4}5H{sub 2}O as the starting material and Zn(CH{sub 3}COO){sub 2}2H{sub 2}O as the source of dopant. All the materials prepared have been found to be polycrystalline SnO{sub 2} possessing tetragonal rutile structure with crystallite sizes in the range 1125 nm. Optical analyses reveal that for the SnO{sub 2} nanoparticles, both undoped and Zn-doped, direct transition occurs with the bandgap energies in the range 3.053.41 eV. Variation in the room temperature resistivity of the SnO{sub 2} nanoparticles as a function of dopant concentration has been explained on the basis of two competitive processes: (i) replacement of Sn{sup 4+} ion by an added Zn{sup 2+} ion, and (ii) ionic compensation of Zn{sup 2+} by the formation of oxygen vacancies. Among all the samples examined for LPG sensing, the 1 at% Zn-doped sample exhibits fast and maximum response (?87%) at 300 C for 1 vol% concentration of LPG in air.

  20. Zn-Doping Dependence of Stripe Order in La1.905Ba0.095CuO4

    SciTech Connect (OSTI)

    Hucker, M.; Zimmermann, M.v.; Xu, Z.J.; Wen, J.S.; Gu, G.D.; Tian, W.; Zarestky, J.; Tranquada, J.M.

    2011-04-01

    The effect of Zn-doping on the stripe order in La{sub 1.905}Ba{sub 0.095}CuO{sub 4} has been studied by means of x-ray and neutron diffraction as well as magnetization measurements. While 1% Zn leads to an increase of the spin stripe order, it unexpectedly causes a wipe out of the visibility of the charge stripe order. A magnetic field of 10 Tesla applied along the c-axis has no reversing effect on the charge order. We compare this observation with the Zn-doping dependence of the crystal structure, superconductivity, and normal state magnetism.

  1. Structural and electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles synthesized by hydrothermal method

    SciTech Connect (OSTI)

    Vlazan, P.; Ursu, D.H.; Irina-Moisescu, C.; Miron, I.; Sfirloaga, P.; Rusu, E.

    2015-03-15

    TiO{sub 2}/ZnO core–shell nanoparticles were successfully synthesized by hydrothermal method in two stages: first stage is the hydrothermal synthesis of ZnO nanoparticles and second stage the obtained ZnO nanoparticles are encapsulated in TiO{sub 2}. The obtained ZnO, TiO{sub 2} and TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of X-ray diffraction, transmission electron microscopy, Brunauer, Emmett, Teller and resistance measurements. X-ray diffraction analysis revealed the presence of both, TiO{sub 2} and ZnO phases in TiO{sub 2}/ZnO core–shell nanoparticles. According to transmission electron microscopy images, ZnO nanoparticles have hexagonal shapes, TiO{sub 2} nanoparticles have a spherical shape, and TiO{sub 2}/ZnO core–shell nanoparticles present agglomerates and the shape of particles is not well defined. The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about 101 meV. - Graphical abstract: Display Omitted - Highlights: • TiO{sub 2}/ZnO core–shell nanoparticles were synthesized by hydrothermal method. • TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of XRD, TEM and BET. • Electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles were investigated. • The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about E{sub a} = 101 meV.

  2. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    SciTech Connect (OSTI)

    El Akkad, Fikry; Abdulraheem, Yaser

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  3. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  4. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  5. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  6. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect (OSTI)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  7. Comment on 'The diatomic dication CuZn{sup 2+} in the gas phase' [J. Chem. Phys. 135, 034306 (2011)

    SciTech Connect (OSTI)

    Fiser, Jiri; Diez, Reinaldo Pis; Franzreb, Klaus; Alonso, Julio A.

    2013-02-21

    In this Comment, the density functional theory (DFT) calculations carried out by Diez et al. [J. Chem. Phys. 135, 034306 (2011)] are revised within the framework of the coupled-cluster single double triple method. These more sophisticated calculations allow us to show that the {sup 2}{Sigma}{sup +} electronic ground state of CuZn{sup 2+}, characterized as the metastable ground state by DFT calculations, is a repulsive state instead. The {sup 2}{Delta} and {sup 2}{Pi} metastable states of CuZn{sup 2+}, on the other hand, should be responsible for the formation mechanism of the dication through the near-resonant electron transfer CuZn{sup +}+ Ar{sup +}{yields} CuZn{sup 2+}+ Ar reaction.

  8. Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub...

    Office of Scientific and Technical Information (OSTI)

    ZnSnOsub 3 exhibits the maximum SHG efficiency of approximately 50 times that of quartz. ... second harmonic generation (SHG) efficiency of approximately 50 times that of quartz. ...

  9. Solution-Derived Bi(ZnTi)O3 - BaTiO3 Thin Films with Bulk-like...

    Office of Scientific and Technical Information (OSTI)

    Title: Solution-Derived Bi(ZnTi)O3 - BaTiO3 Thin Films with Bulk-like Permittivity. Abstract not provided. Authors: Meyer, Kelsey Elizabeth ; Kotula, Paul Gabriel ; Brennecka, ...

  10. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  11. Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

    SciTech Connect (OSTI)

    Ding, Jijun; Wang, Minqiang Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

    2014-12-08

    In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.

  12. Characteristic properties of Raman scattering and photoluminescence on ZnO crystals doped through phosphorous-ion implantation

    SciTech Connect (OSTI)

    Jeong, T. S.; Yu, J. H.; Mo, H. S.; Kim, T. S.; Lim, K. Y.; Youn, C. J.; Hong, K. J.

    2014-02-07

    P-doped ZnO was fabricated by means of the ion-implantation method. At the Raman measurement, the blue shift of the E{sub 2}{sup high} mode and A{sub 1}(LO) phonon of the inactive mode were observed after the P-ion implantation. It suggested to be caused by the compressive stress. Thus, Hall effect measurement indicates that the acceptor levels exists in P-doped ZnO while still maintaining n-type ZnO. From the X-ray photoelectron spectroscopy, the chemical bond formation of the P2p{sub 3/2} spectrum consisted of 2(P{sub 2}O{sub 5}) molecules. Therefore, the implanted P ions were substituted to the Zn site in ZnO. From the photoluminescence (PL) spectra, P-related PL peaks were observed in the energy ranges of 3.1 and 3.5 eV, and its origin was analyzed at P{sub Zn}-2V{sub Zn} complexes, acting as a shallow acceptor. With increasing temperatures, the neutral-acceptor bound-exciton emission, (A{sup 0}, X), shows a tendency to quench the intensity and extend the emission linewidth. From the relations of the intensity and the linewidth as a function of temperature, the broadening of linewidth was believed to the result that the vibration mode of E{sub 2}{sup high} participates in the broadening process of (A{sup 0}, X) and the change of luminescent intensity was attributed to the partial dissociation of (A{sup 0}, X). Consequently, these facts indicate that the acceptor levels existed in P-doped ZnO layer by the ion implantation.

  13. Interactions of aqueous amino acids and proteins with the (110) surface of ZnS in molecular dynamics simulations

    SciTech Connect (OSTI)

    Nawrocki, Grzegorz; Cieplak, Marek

    2014-03-07

    The growing usage of nanoparticles of zinc sulfide as quantum dots and biosensors calls for a theoretical assessment of interactions of ZnS with biomolecules. We employ the molecular-dynamics-based umbrella sampling method to determine potentials of mean force for 20 single amino acids near the ZnS (110) surface in aqueous solutions. We find that five amino acids do not bind at all and the binding energy of the remaining amino acids does not exceed 4.3 kJ/mol. Such energies are comparable to those found for ZnO (and to hydrogen bonds in proteins) but the nature of the specificity is different. Cysteine can bind with ZnS in a covalent way, e.g., by forming the disulfide bond with S in the solid. If this effect is included within a model incorporating the Morse potential, then the potential well becomes much deeperthe binding energy is close to 98 kJ/mol. We then consider tryptophan cage, a protein of 20 residues, and characterize its events of adsorption to ZnS. We demonstrate the relevance of interactions between the amino acids in the selection of optimal adsorbed conformations and recognize the key role of cysteine in generation of lasting adsorption. We show that ZnS is more hydrophobic than ZnO and that the density profile of water is quite different than that forming near ZnOit has only a minor articulation into layers. Furthermore, the first layer of water is disordered and mobile.

  14. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  15. Prolactin receptor attenuation induces zinc pool redistribution through ZnT2 and decreases invasion in MDA-MB-453 breast cancer cells

    SciTech Connect (OSTI)

    Bostanci, Zeynep; Alam, Samina; Soybel, David I.; Kelleher, Shannon L.

    2014-02-15

    Prolactin receptor (PRL-R) activation regulates cell differentiation, proliferation, cell survival and motility of breast cells. Prolactin (PRL) and PRL-R over-expression are strongly implicated in breast cancer, particularly contributing to tumor growth and invasion in the more aggressive estrogen-receptor negative (ER?) disease. PRL-R antagonists have been suggested as potential therapeutic agents; however, mechanisms through which PRL-R antagonists exert their actions are not well-understood. Zinc (Zn) is a regulatory factor for over 10% of the proteome, regulating critical cell processes such as proliferation, cell signaling, transcription, apoptosis and autophagy. PRL-R signaling regulates Zn metabolism in breast cells. Herein we determined effects of PRL-R attenuation on cellular Zn metabolism and cell function in a model of ER-, PRL-R over-expressing breast cancer cells (MDA-MB-453). PRL-R attenuation post-transcriptionally increased ZnT2 abundance and redistributed intracellular Zn pools into lysosomes and mitochondria. ZnT2-mediated lysosomal Zn sequestration was associated with reduced matrix metalloproteinase 2 (MMP-2) activity and decreased invasion. ZnT2-mediated Zn accumulation in mitochondria was associated with increased mitochondrial oxidation. Our results suggest that PRL-R antagonism in PRL-R over-expressing breast cancer cells may reduce invasion through the redistribution of intracellular Zn pools critical for cellular function. - Highlights: PRL-R attenuation increased ZnT2 expression. PRL-R attenuation increased lysosomal and mitochondrial Zn accumulation. PRL-R attenuation decreased MMP-2 and invasion. PRL-R antagonists may modulate lysosomal and mitochondrial Zn pools.

  16. Intercalation of p-methycinnamic acid anion into Zn-Al layered double hydroxide to improve UV aging resistance of asphalt

    SciTech Connect (OSTI)

    Peng, Chao; Dai, Jing; Yu, Jianying; Yin, Jian

    2015-02-15

    A UV absorber, p-methycinnamic acid (PMCA), was intercalated into Zn-Al layered double hydroxide (LDH) by calcination recovery. Fourier transform infrared spectroscopy showed that the PMCA anions completely replaced the CO{sub 3}{sup 2−} anions in the interlayer galleries of Zn-Al-LDH containing PMCA anions (Zn-Al-PMCA-LDH). X-ray diffraction and transmission electron microscopy showed that the interlayer distance increased from 0.78 nm to 1.82 nm after the substitution of PMCA anions for CO{sub 3}{sup 2−} anions. The similar diffraction angles of the CO{sub 3}{sup 2−} anion-containing Zn-Al-LDH (Zn-Al-CO{sub 3}{sup 2−}-LDH) and the Zn-Al-CO{sub 3}{sup 2−}-LDH/styrene–butadiene–styrene (SBS) modified asphalt implied that the asphalt molecules do not enter into the LDH interlayer galleries to form separated-phase structures. The different diffraction angles of Zn-Al-PMCA-LDH and Zn-Al-PMCA-LDH/SBS modified asphalt indicated that the asphalt molecules penetrated into the LDH interlayer galleries to form an expanded-phase structure. UV-Vis absorbance analyses showed that Zn-Al-PMCA-LDH was better able to block UV light due to the synergistic effects of PMCA and Zn-Al-LDH. Conventional physical tests and atomic force microscopy images of the SBS modified asphalt, Zn-Al-CO{sub 3}{sup 2−}-LDH/SBS modified asphalt and Zn-Al-PMCA-LDH/SBS modified asphalt before and after UV aging indicated that Zn-Al-PMCA-LDH improved the UV aging resistance of SBS modified asphalts.

  17. Compositional and Structural Study of Gd Implanted ZnO Films

    SciTech Connect (OSTI)

    Murmu, Peter P.; Kennedy, John V.; Markwitz, Andreas; Ruck, Ben J.

    2009-07-23

    We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550 deg. C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

  18. Nuclear level densities of 64,66 Zn from neutron evaporation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ramirez, A. P. D.; Voinov, A. V.; Grimes, S. M.; Schiller, A.; Brune, C. R.; Massey, T. N.; Salas-Bacci, A.

    2013-12-26

    Double differential cross sections of neutrons from d+63,65Cu reactions have been measured at deuteron energies of 6 and 7.5 MeV. The cross sections measured at backward angles have been compared to theoretical calculations in the framework of the statistical Hauser-Feshbach model. Three different level density models were tested: the Fermi-gas model, the Gilbert-Cameron model, and the microscopic approach through the Hartree-Fock-Bogoliubov method (HFBM). The calculations using the Gilbert-Cameron model are in best agreement with our experimental data. Level densities of the residual nuclei 64Zn and 66Zn have been obtained from statistical neutron evaporation spectra. In conclusion, the angle-integrated cross sectionsmore » have been analyzed with the exciton model of nuclear reaction.« less

  19. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect (OSTI)

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  20. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Venkatesh, S.; Baras, A.; Lee, J. -S.; Roqan, I. S.

    2016-03-24

    Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

  1. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  2. Density-functional Monte-Carlo simulation of CuZn order-disorder transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khan, Suffian N.; Eisenbach, Markus

    2016-01-25

    We perform a Wang-Landau Monte Carlo simulation of a Cu0.5Zn0.5 order-disorder transition using 250 atoms and pairwise atom swaps inside a 5 x 5 x 5 BCC supercell. Each time step uses energies calculated from density functional theory (DFT) via the all-electron Korringa-Kohn- Rostoker method and self-consistent potentials. Here we find CuZn undergoes a transition from a disordered A2 to an ordered B2 structure, as observed in experiment. Our calculated transition temperature is near 870 K, comparing favorably to the known experimental peak at 750 K. We also plot the entropy, temperature, specific-heat, and short-range order as a function ofmore » internal energy.« less

  3. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X. -G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; et al

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1more » spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

  4. Defect-induced magnetism in cobalt-doped ZnO epilayers

    SciTech Connect (OSTI)

    Ciatto, G.; Fonda, E.; Trolio, A. Di; Alippi, P.; Varvaro, G.; Bonapasta, A. Amore; Polimeni, A.; Capizzi, M.

    2014-02-21

    We used a synergic Co-edge X-ray absorption spectroscopy (XAS) and density functional theory calculations approach to perform a study of defects which could account for the room temperature ferromagnetism of ZnCoO, an oxide of great potential interest in semiconductor spintronics. Our results suggest that a key role is played by specific defect complexes in which O vacancies are located close to the Co atoms. Extended defects such as Co clusters have a marginal function, although we observe their formation at the epilayer surface under certain growth conditions. We also show preliminary results of the study of hydrogen-induced defects in ZnCoO epilayers deliberately hydrogen irradiated via a Kaufman source. Hydrogen was in fact predicted to mediate a ferromagnetic spin-spin interaction between neighboring magnetic impurities.

  5. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

    SciTech Connect (OSTI)

    Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X. -G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  6. Cathodoluminescence spectroscopy of zinc germanium phosphide ZnGeP2. Master's thesis

    SciTech Connect (OSTI)

    Gregg, M.R.

    1992-12-03

    Zinc Germanium Phosphide (ZnGeP2) is a nonlinear semiconductor suitable for use as a laser tuning element over the two to six micron wavelength range. Although this crystal has been studied in the past, its luminescent properties are not yet well understood. In this present study, ZnGeP2 has been examined using cathodoluminescence spectroscopy (CL). Specifically, the spectral dependence of the CL was obtained as a function of electron beam energy, beam current and temperature. The resulting CL was found to be polarized with a peak structure that was dependent on the polarization. This peak structure observed by CL is difficult to detect by photoluminescence (PL). It is believed that the-peaks are due to transitions between the conduction band and the spin orbit split acceptor level ALI. It is also believed that the excitation mechanism is in part responsible for the different structure observed.... Zinc germanium phosphide, Cathodoluminescence photoluminescence, Non-linear semiconductor.

  7. Physical and electronic properties of ZnO:Al/porous silicon

    SciTech Connect (OSTI)

    Kim, Choongmo; Park, Anna; Prabakar, K.; Lee, Chongmu . E-mail: cmlee@inha.ac.kr

    2006-02-02

    UV, violet and blue-green photoluminescence has been achieved at room temperature (RT) from ZnO:Al (AZO) films deposited by radio frequency (rf) co-sputtering. As the ZnO target power increases from 100 W, the violet luminescence vanishes and the blue and green-blue luminescences appear. The most intense UV and blue-green luminescence is obtained for the films deposited at higher sputtering powers depending upon the stoichiometry of the films as well as the crystalline quality. The as-prepared porous silicon (PS) emission band lies in the blue-green spectral region and is blue shifted due to the AZO deposition. The current-voltage characteristics of AZO/PS heterostructures have been studied. The ideality factor is found to be 19 and the series resistance as determined from the forward characteristics is 36 M{omega}.

  8. Time resolved optical diagnostics of ZnO plasma plumes in air

    SciTech Connect (OSTI)

    Gupta, Shyam L.; Singh, Ravi Pratap; Thareja, Raj K.

    2013-10-15

    We report dynamical evolution of laser ablated ZnO plasma plumes using interferometry and shadowgraphy; 2-D fast imaging and optical emission spectroscopy in air ambient at atmospheric pressure. Recorded interferograms using Nomarski interferometer and shadowgram images at various time delays show the presence of electrons and neutrals in the ablated plumes. The inference drawn from sign change of fringe shifts is consistent with two dimensional images of the plume and optical emission spectra at varying time delays with respect to ablating pulse. Zinc oxide plasma plumes are created by focusing 1.06 μm radiation on to ZnO target in air and 532 nm is used as probe beam.

  9. Effect of surface adsorption and non-stoichiometry on the workfunction of ZnO surfaces: A first principles study

    SciTech Connect (OSTI)

    Sun, Wei; Li, Yun; Jha, Jitendra Kumar; Shepherd, Nigel D.; Du, Jincheng

    2015-04-28

    ZnO has been actively studied for potential usage as a transparent conducting oxide (TCO) for a variety of applications including organic light emitting diodes and solar cells. In these applications, fine-tuning the workfunction of ZnO is critical for controlling interfacial barriers and improving the charge injection (or outcoupling) efficiencies. We have performed plane wave periodic density functional theory calculations to investigate the effect of different surface absorbents and surface defects (including surface non-stoichiometry) on the workfunction of ZnO. The aim was to understand the underlying mechanism of workfunction changes, in order to engineer specific workfunction modifications. Accurate calculations of workfunctions of polar surfaces were achieved by introducing balancing pseudo charges on one side of the surface to remove the dipolar effect. It was found that increasing the surface coverage of hydrocarbons (-CH{sub 3}) decreased the workfunction, while adsorption of highly electronegative-F and -CF{sub 3} groups and increases in surface O/Zn ratio increased the workfunction of ZnO. The increase of workfunction was found to be directly correlated to the enhancement variation of surface dipole moment due to adsorptions or other surface modifications. Introducing surface absorbents that increase surface dipole moment can be an effective way to increase workfunction in ZnO TCOs.

  10. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  11. Synthesis and characterization of Cr-doped ZnO nanorod-array photocatalysts with improved activity

    SciTech Connect (OSTI)

    Chang, Chi-Jung Yang, Tsung-Lin; Weng, Yu-Ching

    2014-06-01

    Immobilized photocatalysts with high catalytic activity under UV light were prepared by growing Cr-doped ZnO nanorods on glass substrates by a hydrothermal method. The effects of Cr dopant on the surface texture, crystallinity, surface chemistry, and photoinduced charge separation and their relation with the photocatalytic degradation of Cr-doped ZnO were investigated by scanning electron microscopy, diffuse reflectance spectra, photoelectrochemical scanning electrochemical microscopy, and X-ray photoemission spectroscopy. Adding the appropriate amount of Cr dopant is a powerful way to enhance the separation of charge carriers in ZnO photocatalyst. The photocatalytic activity was improved due to the increase in surface oxygen vacancies, the separation of charge carriers, modification of the band gap, and the large surface area of the doped ZnO nanorod photocatalyst. - Graphical abstract: Photoinduced charge separation and its relation with the photocatalytic degradation activity of Cr-doped ZnO were investigated by photoelectrochemical scanning electrochemical microscopy. - Highlights: Cr dopant enhances separation of charge carries in ZnO nanorod photocatalyst. Photoinduced charge carries separation monitored by PEC-SECM. The higher the photocurrent is, the higher the photocatalytic activity is. Degradation of DB86 dye solutions under visible light finished within 50 min. Higher activity due to more oxygen vacancy, tuned band gap and more surface area.

  12. Photocatalytic reduction of aqueous mercury(II) using multi-walled carbon nanotubes/Pd-ZnO nanocomposite

    SciTech Connect (OSTI)

    Mohamed, R.M.; Abdel Salam, Mohamed

    2014-02-01

    Highlights: MWCNT/Pd-ZnO were used for photocatalytic reduction of Hg{sup 2+}. Photocatalytic reduction of Hg{sup 2+} was dependent on wt% of MWCNT, reaction time, and weight of catalyst. Catalyst re-use revealed the present photocatalyst remain effective and active after five, cycles. - Abstract: Pd-ZnO nanocatalyst supported on multi-walled carbon nanotubes was successfully synthesized via a modified solgel method, and the prepared photocatalyst was used for the environmental remediation of aqueous Hg(II) via photocatalytic reduction under visible light. The prepared MWCNTs/Pd/ZnO nanocomposite photocatalyst was characterized using X-ray diffraction, BrunauerEmmettTeller (BET), transmission electron microscopy, and UVvis spectra (UVvis). The results showed that both Pd and ZnO nanoparticles were well dispersed over the MWCNTs, and a uniform nanocomposite was formed. The results also illustrated that Pd doping can eliminate the recombination of electron-hole pairs in the catalyst, and the presence of MWCNTs in ZnO composite can change surface properties to achieve sensitivity to visible light. The results demonstrated that optimum mass ratio of CNT:ZnO:Pd were 0.04:1.0:0.08, which resulted in the exceptional performance of the photocatalyst to reduce about 100% of Hg(II) in a 100 mg L solution within 30 min.

  13. Anisotropic hot deformed magnets prepared from Zn-coated MRE-Fe-B ribbon powder (MRE?=?Nd?+?Y?+?Dy)

    SciTech Connect (OSTI)

    Tang, W; Zhou, L; Sun, K W; Dennis, K W; Kramer, M J; Anderson, I E; McCallum, R W

    2014-05-07

    Milled melt-spun ribbon flake of MRE-Fe-B coated with Zn coating using a vapor transport technique was found to have significant increase in coercivity without degrading the magnetization when the Zn thickness and heat treatment were optimized. Magnetic measurements show that 0.51?wt.?% Zn coating increases the coercivity about 1?kOe over the initial ribbon powder. After vacuum hot deformation (VHD), the VHD magnet with Zn coating of 0.5?wt.?% results in a nearly 3?kOe higher coercivity than an un-coated alloy magnet. An optimized VHD magnet with 0.5?wt.?% Zn coating obtains a coercivity of 11.2?kOe and (BH)max of 23.0 MGOe, respectively. SEM and TEM microstructures analysis demonstrates that the Zn coating on the surface of ribbon powder has diffused along the intergranular boundaries after the ribbon powder was annealed at 750?C for 30?min or was hot deformed at 700750?C.

  14. Investigation of iodine dopant amount effects on dye-sensitized hierarchically structured ZnO solar cells

    SciTech Connect (OSTI)

    Zheng, Yan-Zhen; Ding, Haiyang; Tao, Xia; Chen, Jian-Feng

    2014-07-01

    Highlights: • The effect of I amount on the photovoltaic performance was investigated. • The enhancement in η of ZnO:I DSSCs was from 38% to 77% compared with ZnO DSSCs. • Appropriate I doping enhanced light harness and inhibited charge recombination. - Abstract: We prepare a series of iodine doped zinc oxide monodisperse aggregates (ZnO:I) with various iodine concentrations as the photoanodes of dye-sensitized solar cells (DSSCs) to study iodine dopant amount-dependent photovoltaic performance. The iodine-doped DSSCs achieve overall conversion efficiency (η) of 3.6–4.6%. The enhancement in η of ZnO:I DSSCs is from 38% to 77% as compared to undoped ZnO DSSCs. The significantly enhanced η of DSSCs is found to be correlated with iodine dopant amount. The optimum iodine dopant amount is determined to be 2.3 wt% by X-ray photoelectron spectroscopy. Furthermore, the incident photon to current conversion efficiency and electrochemical impedance spectroscopy data reveal a systematic correlation between photovoltaic properties and the iodine dopant amount. The enhancement of open-circuit potential of ZnO:I cells is arising from negative shift of their flat-band potential, as demonstrated by Mott–Schottky measurement.

  15. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    SciTech Connect (OSTI)

    Vlasenko, N. A. Oleksenko, P. F.; Mukhlyo, M. A.; Veligura, L. I.

    2013-08-15

    The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr concentration of {approx}4 Multiplication-Sign 10{sup 20} cm{sup -3}) upon lasing ({lambda} Almost-Equal-To 2.6 {mu}m) and that induce lasing cessation are studied. It is established that lasing ceases because of light-scattering inhomogeneities formed in the structure and, hence, optical losses enhance. The origin of the inhomogeneities and the causes of their formation are clarified by studying the surface topology and the crystal structure of constituent layers of the samples before and after lasing. The studies are performed by means of atomic force microscopy and X-ray radiography. It is shown that a substantial increase in the sizes of grains on the surface of the structure is the manifestation of changes induced in the ZnS:Cr film by recrystallization. Recrystallization is initiated by local heating by absorbed laser radiation in existing Cr clusters and quickened by a strong electric field (>1 MV cm{sup -1}). The changes observed in the ZnS:Cr film are as follows: the textured growth of ZnS crystallites, an increase in the content of Cr clusters, and the appearance of some CrS and a rather high ZnO content. Some ways for improving the stability of lasing in the ZnS:Cr-based waveguide structures are proposed.

  16. Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

    SciTech Connect (OSTI)

    Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

    2011-11-15

    This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

  17. Magnetic fields and fluctuations in weakly Mn doped ZnGeP{sub 2}

    SciTech Connect (OSTI)

    Mengyan, P. W.; Lichti, R. L.; Baker, B. B.; Celebi, Y. G.; Catak, E.; Carroll, B. R.; Zawilski, K. T.; Schunemann, P. G.

    2014-02-21

    We report on our measurements of local and bulk magnetic features in weakly Mn doped ZnGeP{sub 2}. Utilizing muon spin rotation and relaxation measurements, we identify local ferromagnetic order and fluctuations in the local fields as sampled by an implanted muon (?{sup +}). We also report on field induced ferromagnetism occurring above the claimed paramagnetic to ferromagnetic transition temperature (T{sub c} = 312 K)

  18. -delayed ?-proton decay in ??Zn: Analysis of the charged-particle spectrum

    SciTech Connect (OSTI)

    Orrigo, S. E.A.; Rubio, B.; Fujita, Y.; Blank, B.; Agramunt, J.; Algora, A.; Ascher, P.; Cceres, L.; Cakirli, R. B.; Fujita, H.; Ganio?lu, E.; Gerbaux, M.; Kozer, H. C.; Kucuk, L.; Kurtukian-Nieto, T.; Popescu, L.; Rogers, A. M.; Susoy, G.; Stodel, C.; Suzuki, T.; Tamii, A.; Thomas, J. C.

    2015-01-01

    A study of the ? decay of the proton-rich Tz = 2 nucleus ??Zn has been reported in a recent publication. A rare and exotic decay mode, ?-de-layed ?-proton decay, has been observed there for the first time in the fp shell. Here, we expand on some of the details of the data analysis, focusing on the charged particle spectrum.

  19. Removal of Zn or Cd and cyanide from cyanide electroplating wastes

    DOE Patents [OSTI]

    Moore, Fletcher L.

    1977-05-31

    A method is described for the efficient stripping of stable complexes of a selected quaternary amine and a cyanide of Zn or Cd. An alkali metal hydroxide solution such as NaOH or KOH will quantitatively strip a pregnant extract of the quaternary ammonium complex of its metal and cyanide content and regenerate a quaternary ammonium hydroxide salt which can be used for extracting further metal cyanide values.

  20. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect (OSTI)

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  1. Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

    SciTech Connect (OSTI)

    Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya; Rogl, Peter; Bednar, Ingeborg; Bauer, Ernst

    2010-10-15

    Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.

  2. Properties of nitrogen implanted and electron beam annealed bulk ZnO

    SciTech Connect (OSTI)

    Kennedy, J.; Carder, D. A.; Markwitz, A.; Reeves, R. J.

    2010-05-15

    The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at {approx}3.09 eV in the nitrogen implanted with 1-2x10{sup 15} ions cm{sup -2} and EB annealed at 800-900 deg. C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.

  3. Thermal evaporation and condensation synthesis of metallic Zn layered polyhedral microparticles

    SciTech Connect (OSTI)

    Khan, Waheed S.; Cao, Chuanbao; Usman, Zahid; Hussain, Sajad; Nabi, Ghulam; Butt, Faheem K.; Ali, Zulfiqar; Mahmood, Tariq; Niaz, Niaz Ahmad

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Zn polyhedral microparticles prepared by thermal evaporation and condensation route. Black-Right-Pointing-Pointer Vapour-solid process based growth model governs the formation of Zn microparticles. Black-Right-Pointing-Pointer A strong PL emission band is observed at 369 nm in UV region. Black-Right-Pointing-Pointer Radiative recombination of electrons in the s, p conduction band and the holes in the d bands causes this emission. -- Abstract: Metallic zinc layered polyhedral microparticles have been fabricated by thermal evaporation and condensation technique using zinc as precursor at 750 Degree-Sign C for 120 min and NH{sub 3} as a carrier gas. The zinc polyhedral microparticles with oblate spherical shape are observed to be 2-9 {mu}m in diameter along major axes and 1-7 {mu}m in thickness along minor axes. The structural, compositional and morphological characterizations were performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). A vapour-solid (VS) mechanism based growth model has been proposed for the formation of Zn microparticles. Room temperature photoluminescence (PL) emission spectrum of the product exhibited a strong emission band at 369 nm attributed to the radiative recombination of electrons in the s, p conduction band near Fermi surface and the holes in the d bands generated by the optical excitation.

  4. Oxidation of palladium on Au(111) and ZnO(0001) supports

    SciTech Connect (OSTI)

    Lallo, J.; Tenney, S. A.; Kramer, A.; Sutter, P.; Batzill, M.

    2014-10-21

    The oxidation of supported Pd-deposits on Au(111) and ZnO(0001) single crystals has been studied by x- ray photoemission spectroscopy (XPS). Oxidation has been carried out ex-situ in a high-pressure cell with subsequent vacuum-transfer and characterization by XPS in ultrahigh vacuum (UHV), as well as using in-situ characterization by synchrotron based near-ambient pressure XPS. On Au(111) alloying of Pd with the substrate competes with oxidation and only sufficiently thick Pd films have been found to oxidize. For Pd on ZnO the oxidation conditions depend on the amount of deposited Pd. Thicker Pd deposits behave similar to bulk Pd, while thinner films oxidize already at lower temperatures. Interestingly, for very small amounts of Pd, in-situ XPS shows full oxidation at room temperature and at less than 0.6 mbar O? pressure. This indicates a lowering of the kinetic barriers for oxidation of very small supported Pd-clusters. The formed oxide is, however, not stable in UHV and a slow reduction is observed. The instability of this oxide indicates that the Pd-oxide formed at the interface to ZnO may have different chemical properties compared to bulk PdO or surface oxides on Pd.

  5. Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

    SciTech Connect (OSTI)

    Wang, L. Laurent, J.; Brémond, G.; Chauveau, J. M.; Sallet, V.; Jomard, F.

    2015-11-09

    Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.

  6. Phase transition induced strain in ZnO under high pressure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Xiaozhi; Dong, Haini; Li, Yanchun; Lin, Chuanlong; Park, Changyong; He, Duanwei; Yang, Wenge

    2016-05-13

    Under high pressure, the phase transition mechanism and mechanical property of material are supposed to be largely associated with the transformation induced elastic strain. However, the experimental evidences for such strain are scanty. The elastic and plastic properties of ZnO, a leading material for applications in chemical sensor, catalyst, and optical thin coatings, were determined using in situ high pressure synchrotron axial and radial x-ray diffraction. The abnormal elastic behaviors of selected lattice planes of ZnO during phase transition revealed the existence of internal elastic strain, which arise from the lattice misfit between wurtzite and rocksalt phase. Furthermore, the strengthmore » decrease of ZnO during phase transition under non-hydrostatic pressure was observed and could be attributed to such internal elastic strain, unveiling the relationship between pressure induced internal strain and mechanical property of material. Ultimately, these findings are of fundamental importance to understanding the mechanism of phase transition and the properties of materials under pressure.« less

  7. Characterization of ZnO-degraded varistors used in high-tension devices

    SciTech Connect (OSTI)

    Ramirez, M.A.; Maniette, Y.

    2007-06-05

    The effects of the degradation process on the structural, microstructural and electrical properties of ZnO-based varistors were analyzed. Rietveld refinement showed that the BiO{sub 2-x} phase is affected by the degradation process. Besides the changes in the spinel phase, the degradation process also affects the lattice microstrain in the ZnO phase. Scanning electron microscopy analysis showed electrode-melting failure, while wavelength dispersive X-ray spectroscopy qualitative analysis showed deficiency of oxygen species at the grain boundaries in the degraded samples. Atomic force microscopy using electrostatic mode force illustrated a decrease in the charge density at the grain boundaries of the degraded sample. Transmission electron microscopy showed submicrometric spinel grains embedded in a ZnO matrix, but their average grain size is smaller in the degraded sample than in the standard one. Long pulses appeared to be more harmful for the varistors' properties than short ones, causing higher leakage current values. The electrical characteristics of the degraded sample are partially restored after heat treatment in an oxygen-rich atmosphere.

  8. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10, photoresponsivity of 5.0410A/W, and photocurrent gain of 1.910, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  9. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes

    SciTech Connect (OSTI)

    Velikanov, S D; Zaretskiy, N A; Zotov, E A; Maneshkin, A A; Chuvatkin, R S; Yutkin, I M; Kozlovsky, V I; Korostelin, Yu V; Krokhin, O N; Podmar'kov, Yu P; Savinova, S A; Skasyrsky, Ya K; Frolov, M P

    2015-01-31

    The characteristics of a Fe:ZnSe laser pumped by a single-pulse free-running Er : YAG laser and a repetitively pulsed HF laser are presented. An output energy of 4.9 J is achieved in the case of liquid-nitrogen cooling of the Fe{sup 2+}:ZnSe active laser element longitudinally pumped by an Er:YAG laser with a pulse duration of 1 ms and an energy up to 15 J. The laser efficiency with respect to the absorbed energy is 47%. The output pulse energy at room temperature is 53 mJ. The decrease in the output energy is explained by a strong temperature dependence of the upper laser level lifetime and by pulsed heating of the active element. The temperature dependence of the upper laser level lifetime is used to determine the pump parameters needed to achieve high pulse energies at room temperature. Stable repetitively-pulsed operation of the Fe{sup 2+}:ZnSe laser at room temperature with an average power of 2.4 W and a maximum pulse energy of 14 mJ is achieved upon pumping by a 1-s train of 100-ns HF laser pulses with a repetition rate of 200 Hz. (lasers)

  10. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect (OSTI)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  11. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    SciTech Connect (OSTI)

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-08-17

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE{sub C}) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE{sub C} of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

  12. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect (OSTI)

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ∼100 nm thickness with various Aldoping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm{sup 2} /V s . Film resistivity reached a minima of 4.4×10{sup −3}  Ω cm whereas the carrier concentration reached a maxima of 1.7×10{sup 20}  cm{sup −3} , at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  13. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-07-21

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4?V) at low operating voltage (6/?6?V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E???5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  14. Oxidation of palladium on Au(111) and ZnO(0001) supports

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lallo, J.; Tenney, S. A.; Kramer, A.; Sutter, P.; Batzill, M.

    2014-10-21

    The oxidation of supported Pd-deposits on Au(111) and ZnO(0001) single crystals has been studied by x- ray photoemission spectroscopy (XPS). Oxidation has been carried out ex-situ in a high-pressure cell with subsequent vacuum-transfer and characterization by XPS in ultrahigh vacuum (UHV), as well as using in-situ characterization by synchrotron based near-ambient pressure XPS. On Au(111) alloying of Pd with the substrate competes with oxidation and only sufficiently thick Pd films have been found to oxidize. For Pd on ZnO the oxidation conditions depend on the amount of deposited Pd. Thicker Pd deposits behave similar to bulk Pd, while thinner filmsmore » oxidize already at lower temperatures. Interestingly, for very small amounts of Pd, in-situ XPS shows full oxidation at room temperature and at less than 0.6 mbar O₂ pressure. This indicates a lowering of the kinetic barriers for oxidation of very small supported Pd-clusters. The formed oxide is, however, not stable in UHV and a slow reduction is observed. The instability of this oxide indicates that the Pd-oxide formed at the interface to ZnO may have different chemical properties compared to bulk PdO or surface oxides on Pd.« less

  15. Influence of valence electron concentration on Laves phases: Structures and phase stability of pseudo-binary MgZn2-xPdx

    SciTech Connect (OSTI)

    Thimmaiah, Srinivasa; Miller, Gordon J.

    2015-06-03

    A series of pseudo-binary compounds MgZn2-xPdx (0.15 ? x ? 1.0) were synthesized and structurally characterized to understand the role of valence electron concentration (vec) on the prototype Laves phase MgZn2 with Pd-substitution. Three distinctive phase regions were observed with respect to Pd content, all exhibiting fundamental Laves phase structures: 0.1 ? x ? 0.3 (MgNi2-type, hP24; MgZn1.80Pd0.20(2)), 0.4 ? x ? 0.6 (MgCu2-type, cF24; MgZn1.59Pd0.41(2)), and 0.62 ? x ? 0.8 (MgZn2-type, hP12: MgZn1.37Pd0.63(2)). Refinements from single-crystal X-ray diffraction indicated nearly statistical distributions of Pd and Zn atoms among the majority atom sites in these structures. Interestingly, the MgZn2-type structure re-emerges in MgZn2xPdx at x ? 0.7 with the refined composition MgZn1.37(2)Pd0.63 and a c/a ratio of 1.59 compared to 1.64 for binary MgZn2. Electronic structure calculations on a model MgZn1.25Pd0.75 yielded a density of states (DOS) curve showing enhancement of a pseudogap at the Fermi level as a result of electronic stabilization due to the Pd addition. Moreover, integrated crystal orbital Hamilton population values show significant increases of orbital interactions for (Zn,Pd)(Zn,Pd) atom pairs within the majority atom substructure, i.e., within the Kagom nets as well as between a Kagom net and an apical site, from binary MgZn2 to the ternary MgZn1.25Pd0.75. Multi-centered bonding is evident from electron localization function plots for MgZn1.25Pd0.75, an outcome which is in accordance with analysis of other Laves phases.

  16. Influence of valence electron concentration on Laves phases: Structures and phase stability of pseudo-binary MgZn2-xPdx

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thimmaiah, Srinivasa; Miller, Gordon J.

    2015-06-03

    A series of pseudo-binary compounds MgZn2-xPdx (0.15 ≤ x ≤ 1.0) were synthesized and structurally characterized to understand the role of valence electron concentration (vec) on the prototype Laves phase MgZn2 with Pd-substitution. Three distinctive phase regions were observed with respect to Pd content, all exhibiting fundamental Laves phase structures: 0.1 ≤ x ≤ 0.3 (MgNi2-type, hP24; MgZn1.80Pd0.20(2)), 0.4 ≤ x ≤ 0.6 (MgCu2-type, cF24; MgZn1.59Pd0.41(2)), and 0.62 ≤ x ≤ 0.8 (MgZn2-type, hP12: MgZn1.37Pd0.63(2)). Refinements from single-crystal X-ray diffraction indicated nearly statistical distributions of Pd and Zn atoms among the majority atom sites in these structures. Interestingly, the MgZn2-typemore » structure re-emerges in MgZn2–xPdx at x ≈ 0.7 with the refined composition MgZn1.37(2)Pd0.63 and a c/a ratio of 1.59 compared to 1.64 for binary MgZn2. Electronic structure calculations on a model “MgZn1.25Pd0.75” yielded a density of states (DOS) curve showing enhancement of a pseudogap at the Fermi level as a result of electronic stabilization due to the Pd addition. Moreover, integrated crystal orbital Hamilton population values show significant increases of orbital interactions for (Zn,Pd)–(Zn,Pd) atom pairs within the majority atom substructure, i.e., within the Kagomé nets as well as between a Kagomé net and an apical site, from binary MgZn2 to the ternary “MgZn1.25Pd0.75”. Multi-centered bonding is evident from electron localization function plots for “MgZn1.25Pd0.75”, an outcome which is in accordance with analysis of other Laves phases.« less

  17. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    SciTech Connect (OSTI)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.

  18. The new barium zinc mercurides Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} - Synthesis, crystal and electronic structure

    SciTech Connect (OSTI)

    Schwarz, Michael; Wendorff, Marco; Roehr, Caroline

    2012-12-15

    The title compounds Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba{sub 3}ZnHg{sub 10} (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4{sup 4} Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl{sub 4}. The flat pyramids are connected via Hg-Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M-M distances (273-301 pm; CN 9-11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317-348 pm) to their Zn/Hg neighbours. In the structure of BaZn{sub 0.6}Hg{sub 3.4} (cubic, cI320, space group I4{sup Macron }3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba{sub 3}ZnHg{sub 10}, the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4 Multiplication-Sign 4 Multiplication-Sign 4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6){sub 4} with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4){sub 2} dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb{sub 3}Hg{sub 20} applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic

  19. Enhanced T-lymphocyte blastogenic response to tuberculin (PPD) in children of northeast (NE) Thailand supplemented with vitamin A (VA) and zinc (Zn)

    SciTech Connect (OSTI)

    Kramer, T.R.; Udomkesmalee, E.; Dhanamitta, S.; Sirisinha, S.; Charoenkiatkul, S.; Tantipopipat, S.; Banjong, O.; Rojroongwasinkul, N.; Smith, J.C. Jr. Mahidol Univ., Nakhon Pathom )

    1991-03-15

    Beneficial effects of Va and/or Zn supplementation of children in NE Thailand are described in a companion abstract. In the same study, blastogenic response (BR) of T-lymphocytes to concanavalin-A (ConA) and PPD were assayed in cultures containing mononuclear cells (MNC) or whole blood (WB). Methods were previously described. Children were previously vaccinated with BCG. BR to ConA of MNC or WB from children supplemented with VA, Zn, VA + Zn or placebo were similar. BR to PPD of MNC was higher in children receiving VA + Zn than placebo, but not in children supplemented with VA or Zn alone. Data indicate that children with suboptimal VA and Zn nutriture supplemented with < 2 times RDA of these nutrients showed enhanced cellular immunity to PPD. This observation is relevant to BCG immunization program and thus may benefit public health.

  20. Synthesis of methanol and dimethyl ether from syngas over Pd/ZnO/Al2O3 catalysts

    SciTech Connect (OSTI)

    Lebarbier, Vanessa M.; Dagle, Robert A.; Kovarik, Libor; Lizarazo-Adarme, Jair A.; King, David L.; Palo, Daniel R.

    2012-01-01

    A Pd/ZnO/Al2O3 catalyst was developed for the synthesis of methanol and dimethyl ether (DME) from syngas. Studied were temperatures of operation ranging from 250C to 380C. High temperatures (e.g. 380C) are necessary when combining methanol and DME synthesis with a methanol to gasoline (MTG) process in a single reactor bed. A commercial Cu/ZnO/Al2O3 catalyst, utilized industrially for the synthesis of methanol at 220-280C, suffers from a rapid deactivation when the reaction is conducted at high temperature (>320C). On the contrary, a Pd/ZnO/Al2O3 catalyst was found to be highly stable for methanol and DME synthesis at 380C. The Pd/ZnO/Al2O3 catalyst was thus further investigated for methanol and DME synthesis at P=34-69 bars, T= 250-380C, GHSV= 5 000-18 000 h-1, and molar feeds H2/CO= 1, 2, and 3. Selectivity to DME increased with decreasing operating temperature, and increasing operating pressure. Increased GHSVs and H2/CO syngas feed ratios also enhanced DME selectivity. Undesirable CH4 formation was observed, however, can be minimized through choice of process conditions and by catalyst design. By studying the effect of the Pd loading and the Pd:Zn molar ratio the formulation of the Pd/ZnO/Al2O3 catalyst was optimized. A catalyst with 5% Pd and a Pd:Zn molar ratio of 0.25:1 has been identified as the preferred catalyst. Results indicate that PdZn particles are more active than Pd particles for the synthesis of methanol and less active for CH4 formation. A correlation between DME selectivity and the concentration of acid sites of the catalysts has been established. Hence, two types of sites are required for the direct conversion of syngas to DME: 1) PdZn particles are active for the synthesis of methanol from syngas, and 2) acid sites which are active for the conversion of methanol to DME. Additionally, CO2 formation was problematic as PdZn was found to be active for the water-gas-shift (WGS) reaction, under all the conditions evaluated.

  1. The effect of Cu/Zn molar ratio on CO{sub 2} hydrogenation over Cu/ZnO/ZrO{sub 2}/Al{sub 2}O{sub 3} catalyst

    SciTech Connect (OSTI)

    Shaharun, Salina E-mail: maizats@petronas.com.my; Shaharun, Maizatul S. E-mail: maizats@petronas.com.my; Taha, Mohd F.; Mohamad, Dasmawati

    2014-10-24

    Catalytic hydrogenation of carbon dioxide (CO{sub 2}) to methanol is an attractive way to recycle and utilize CO{sub 2}. A series of Cu/ZnO/Al{sub 2}O{sub 3}/ZrO{sub 2} catalysts (CZAZ) containing different molar ratios of Cu/Zn were prepared by the co-precipitation method and investigated in a stirred slurry autoclave system. The catalysts were characterized by temperature-programmed reduction (TPR), field emission scanning electron microscopy-energy dispersive analysis (FESEM-EDX), X-ray diffraction (XRD) and N{sub 2} adsorption-desorption. Higher surface area, SA{sub BET} values (42.659.9 m{sup 2}/g) are recorded at low (1) and high (5) Cu/Zn ratios with the minimum value of 35.71 m{sup 2}/g found for a Cu/Zn of 3. The reducibility of the metal oxides formed after calcination of catalyst samples was also affected due to change in metal-support interaction. At a low reaction temperature of 443 K, total gas pressure of 3.0 MPa and 0.1 g/mL of the CZAZ catalyst, the selectivity to methanol decreased as the Cu/Zn molar ratio increased, and the maximum selectivity of 67.73 was achieved at Cu/Zn molar ratio of 1. With a reaction time of 3h, the best performing catalyst was CZAZ75 with Cu/Zn molar ratio of 5 giving methanol yield of 79.30%.

  2. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect (OSTI)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  3. Synthesis of ZnO nanorodnanosheet composite via facile hydrothermal method and their photocatalytic activities under visible-light irradiation

    SciTech Connect (OSTI)

    Tan, Wai Kian; Abdul Razak, Khairunisak; Lockman, Zainovia; Kawamura, Go; Muto, Hiroyuki; Matsuda, Atsunori

    2014-03-15

    ZnO composite films consisting of ZnO nanorods and nanosheets were prepared by low-temperature hydrothermal processing at 80 C on seeded glass substrates. The seed layer was coated on glass substrates by solgel dip-coating and pre-heated at 300 C for 10 min prior to hydrothermal growth. The size of the grain formed after pre-heat treatment was ?40 nm. A preferred orientation seed layer at the c-axis was obtained, which promoted vertical growth of the ZnO nanorod arrays and formation of the ZnO nanosheets. X-ray diffraction patterns and high-resolution transmission electron microscope (HR-TEM) images confirmed that the ZnO nanorods and nanosheets consist of single crystalline and polycrystalline structures, respectively. Room temperature photoluminescence spectra of the ZnO nanorodnanosheet composite films exhibited band-edge ultraviolet (UV) and visible emission (blue and green) indicating the formation of ZnO crystals with good crystallinity and are supported by Raman scattering results. The formation of one-dimensional (1D) ZnO nanorod arrays and two-dimensional (2D) ZnO nanosheet films using seeded substrates in a single low-temperature hydrothermal step would be beneficial for realization of device applications that utilize substrates with limited temperature stability. The ZnO nanorods and nanosheets composite structure demonstrated higher photocatalytic activity during degradation of aqueous methylene blue under visible-light irradiation. -- Graphical abstract: Schematic illustration of ZnO nanorodnanosheet composite structure formation by hydrothermal at low-temperature of 80 C against time. Highlights: Novel simultaneous formation of ZnO nanorods and nanosheets composite structure. Facile single hydrothermal step formation at low-temperature. Photoluminescence showed ultraviolet and visible emission. Feasible application on substrates with low temperature stability. Improved photocatalytic activity under visible-light irradiation.

  4. Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Hasoon, F. S.; Al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.

    2008-05-01

    This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.

  5. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    SciTech Connect (OSTI)

    Shi, Zhiwei; Walker, Amy V.

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  6. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  7. Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices

    SciTech Connect (OSTI)

    Chang, Li-Chun; Kao, Hsuan-Ling; Liu, Keng-Hao

    2014-03-15

    ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher R{sub off}/R{sub on} ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrated that the Cr atoms lost electrons to become Cr{sup 3+} ions after dispersion. These results indicated that the altered status of Cr in ZnO/Cr/ZnO trilayer films during RTA treatment was responsible for the switching mechanism transition.

  8. Dual nature of 3 d electrons in YbT 2 Zn 20 (T = Co; Fe) evidenced by electron spin resonance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ivanshin, V. A.; Litvinova, T. O.; Gimranova, K.; Sukhanov, A. A.; Jia, S.; Bud'ko, S. L.; Canfield, P. C.

    2015-03-18

    The electron spin resonance experiments were carried out in the single crystals YbFe2Zn20. The observed spin dynamics is compared with that in YbCo2Zn20 and Yb2Co12P7 as well as with the data of inelastic neutron scattering and electronic band structure calculations. Our results provide direct evidence that 3d electrons are itinerant in YbFe2Zn20 and localized in YbCo2Zn20. Possible connection between spin paramagnetism of dense heavy fermion systems, quantum criticality effects, and ESR spectra is discussed.

  9. Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors

    SciTech Connect (OSTI)

    Akazawa, Housei

    2014-09-01

    The manner in which hydrogen atoms contribute to the electric conduction of undoped ZnO and Ga-doped ZnO (GZO) films was investigated. Hydrogen atoms were permeated into these films through annealing in an atmospheric H{sub 2} ambient. Because the creation of hydrogen donors competes with the thermal annihilation of native donors at elevated temperatures, improvements to electric conduction from the initial state can be observed when insulating ZnO films are used as samples. While the resistivity of conductive ZnO films increases when annealing them in a vacuum, the degree of increase is mitigated when they are annealed in H{sub 2}. Hydrogenation of ZnO crystals was evidenced by the appearance of OH absorption signals around a wavelength of 2700?nm in the optical transmittance spectra. The lowest resistivity that was achieved by H{sub 2} annealing was limited to 12??10{sup ?2} ? cm, which is one order of magnitude higher than that by native donors (23??10{sup ?3} ? cm). Hence, all native donors are converted to hydrogen donors. In contrast, GZO films that have resistivities yet to be improved become more conductive after annealing in H{sub 2} ambient, which is in the opposite direction of GZO films that become more resistive after vacuum annealing. Hydrogen atoms incorporated into GZO crystals should assist in reactivating Ga{sup 3+} donors.

  10. Visible light plasmonic heating of Au-ZnO for the catalytic reduction of CO{sub 2}

    SciTech Connect (OSTI)

    Wang, Congjun; Ranasingha, Oshadha; Natesakhawat, Sittichai; Ohodnicki, Paul R.; Ohodnicki, Andio, Mark; Lewis, James; P Matranga, Christopher

    2013-05-01

    Plasmonic excitation of Au nanoparticles attached to the surface of ZnO catalysts using low power 532 nm laser illumination leads to significant heating of the catalyst and the conversion of CO{sub 2} and H{sub 2} reactants to CH{sub 4} and CO products. Temperature-calibrated Raman spectra of ZnO phonons show that intensity-dependent plasmonic excitation can controllably heat AuZnO from 30 to #1;~600 {degrees}#3;C and simultaneously tune the CH{sub 4} : CO product ratio. The laser induced heating and resulting CH{sub 4} : CO product distribution agrees well with predictions from thermodynamic models and temperatureprogrammed reaction experiments indicating that the reaction is a thermally driven process resulting from the plasmonic heating of the AuZnO. The apparent quantum yield for CO{sub 2} conversion under continuous wave (cw) 532 nm laser illumination is 0.030%. The AuZnO catalysts are robust and remain active after repeated laser exposure and cycling. The light intensity required to initiate CO{sub 2} reduction is low (#1;~2.5 x#4; 10{sup 5} W m{sup #5;-2}) and achievable with solar concentrators. Our results illustrate the viability of plasmonic heating approaches for CO{sub 2} utilization and other practical thermal catalytic applications.

  11. Microstructure evolution of Al/Mg butt joints welded by gas tungsten arc with Zn filler metal

    SciTech Connect (OSTI)

    Liu Fei; Zhang Zhaodong; Liu Liming, E-mail: liulm@dlut.edu.cn

    2012-07-15

    Based on the idea of alloying welding seam, Gas tungsten arc welding method with pure Zn filler metal was chosen to join Mg alloy and Al alloy. The microstructures, phases, element distribution and fracture morphology of welding seams were examined. The results indicate that there was a transitional zone in the width of 80-100 {mu}m between the Mg alloy substrate and fusion zone. The fusion zone was mainly composed of MgZn{sub 2}, Zn-based solid solution and Al-based solid solution. The welding seam presented distinct morphology in different location owning to the quite high cooling rate of the molten pool. The addition of Zn metal could prevent the formation of Mg-Al intermetallics and form the alloyed welding seam during welding. Therefore, the tensile strengths of joints have been significantly improved compared with those of gas tungsten arc welded joints without Zn metal added. Highlights: Black-Right-Pointing-Pointer Mg alloy AZ31B and Al alloy 6061 are welded successfully. Black-Right-Pointing-Pointer Zinc wire is employed as a filler metal to form the alloyed welding seam. Black-Right-Pointing-Pointer An alloyed welding seam is benefit for improving of the joint tensile strength.

  12. Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

    SciTech Connect (OSTI)

    Chen, Hong-Ming; Zhou, Ren-Wei; Li, Fei; University of Chinese Academy of Sciences, Beijing 100049 ; Liu, Xue-Chao Zhuo, Shi-Yi; Shi, Er-Wei; Xiong, Ze

    2014-04-15

    Zn{sub 1-x}Er{sub x}O (0.005 ? x ? 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. Ferromagnetism, crystal structure, microstructure and photoluminescence properties of the films were characterized. It is found that the chemical valence state of Er is trivalent, and the Er{sup 3+} cations play an important role in ferromagnetism. Both saturated magnetization (M{sub s}) and zinc vacancy (V{sub Zn}) are decreased with the increase of x from 0.005 to 0.03. However, further increasing x to 0.04, the M{sub s} is quenched due to the generation of Er clusters. It reveals that the intensity of M{sub s} is not only associated with the V{sub Zn} concentration, but also related to the Er clusters. The V{sub Zn} concentration and the Er clusters can jointly boost the ferromagnetism in the Zn{sub 1-x}Er{sub x}O thin films.

  13. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect (OSTI)

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R?=?I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  14. MoS{sub 2}@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties

    SciTech Connect (OSTI)

    Tan, Ying-Hua; Yu, Ke Li, Jin-Zhu; Fu, Hao; Zhu, Zi-Qiang

    2014-08-14

    The molybdenum disulfide (MoS{sub 2})@ZnO nano-heterojunctions were successfully fabricated through a facile three-step synthetic process: prefabrication of the ZnO nanoparticles, the synthesis of MoS{sub 2} nanoflowers, and the fabrication of MoS{sub 2}@ZnO heterojunctions, in which ZnO nanoparticles were uniformly self-assembled on the MoS{sub 2} nanoflowers by utilizing polyethyleneimine as a binding agent. The photocatalytic activities of the composite samples were evaluated by monitoring the photodegradation of methylene blue (MB). Compared with pure MoS{sub 2} nanoflowers, the composites show higher adsorption capability in dark and better photocatalytic efficiency due to the increased specific surface area and improved electron-hole pair separation. After irradiation for 100?min, the remaining MB in solution is about 7.3%. Moreover, the MoS{sub 2}@ZnO heterojunctions possess enhanced field emission properties with lower turn-on field of 3.08?V ?m{sup ?1}and lower threshold field of 6.9?V ?m{sup ?1} relative to pure MoS{sub 2} with turn-on field of 3.65?V ?m{sup ?1} and threshold field of 9.03?V ?m{sup ?1}.

  15. Catalytic conversion of syngas to mixed alcohols over Zn-Mn promoted Cu-Fe based catalyst

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lu, Yongwu; Yu, Fei; Hu, Jin; Liu, Jian

    2012-04-12

    Zn-Mn promoted Cu-Fe based catalyst was synthesized by the co-precipitation method. Mixed alcohols synthesis from syngas was studied in a half-inch tubular reactor system after the catalyst was reduced. Zn-Mn promoted Cu-Fe based catalyst was characterized by SEM-EDS, TEM, XRD, and XPS. The liquid phase products (alcohol phase and hydrocarbon phase) were analyzed by GC-MS and the gas phase products were analyzed by GC. The results showed that Zn-Mn promoted Cu-Fe based catalyst had high catalytic activity and high alcohol selectivity. The maximal CO conversion rate was 72%, and the yield of alcohol and hydrocarbons were also very high. Cumore » (111) was the active site for mixed alcohols synthesis, Fe2C (101) was the active site for olefin and paraffin synthesis. The reaction mechanism of mixed alcohols synthesis from syngas over Zn-Mn promoted Cu-Fe based catalyst was proposed. Here, Zn-Mn promoted Cu-Fe based catalyst can be regarded as a potential candidate for catalytic conversion of biomass-derived syngas to mixed alcohols.« less

  16. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation

    SciTech Connect (OSTI)

    Azarang, Majid, E-mail: azarangmajid@gmail.com, E-mail: azarang@phys.usb.ac.ir [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, University of Sistan and Baluchestan, 98135-674 Zahedan (Iran, Islamic Republic of); Shuhaimi, Ahmad; Sookhakian, M. [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yousefi, Ramin, E-mail: Yousefi.ramin@gmail.com, E-mail: raminyousefi@iaumis.ac.ir [Department of Physics, Masjed-Soleiman Branch, Islamic Azad University (I.A.U), Masjed-Soleiman (Iran, Islamic Republic of)

    2014-08-28

    The effects of different concentrations of graphene oxide (GO) on the structure and optical properties of ZnO nanoparticles (NPs) were investigated. The nanocomposites were synthesized via the sol-gel method in a gelatin medium. X-ray diffraction patterns (XRD) and Fourier transform infrared spectroscopy indicated that the GO sheets were reduced and changed to reduced GO (RGO) during the calcination of the nanocomposites at 400?C. In addition, the XRD patterns of the NPs indicated a hexagonal (wurtzite) structure for all the products. Microscopic studies showed that the NPs were decorated and dispersed on the RGO sheets very well. However, these studies revealed that the RGO concentration had an effect on the crystal growth process for the ZnO NPs. Furthermore, these studies showed that the NPs could be grown with a single crystal quality in an optimum RGO concentration. According to the XRD results that were obtained from pure ZnO NPs, the calcinations temperature was decreased by the RGO. UVvis and room temperature photoluminescence studies showed that the optical properties of the ZnO/RGO nanocomposite were affected by the RGO concentration. Finally, the obtained ZnO/RGO nanocomposite was used to generate a photocurrent. Observations showed that the photocurrent intensity of the nanocomposite was significantly increased by increasing the RGO, with an optimum RGO concentration.

  17. Magnetic properties of GdT2Zn20 (T = Fe, Co) investigated by x-ray diffraction and spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    J. R. L. Mardegan; Fabbris, G.; Francoual, S.; Veiga, L. S. I.; Strempfer, J.; Haskel, D.; Ribeiro, R. A.; Avila, M. A.; Giles, C.

    2016-01-26

    In this study, we investigate the magnetic and electronic properties of the GdT2Zn20 (T=Fe and Co) compounds using x-ray resonant magnetic scattering (XRMS), x-ray absorption near-edge structure (XANES), and x-ray magnetic circular dichroism (XMCD). The XRMS measurements reveal that GdCo2Zn20 has a commensurate antiferromagnetic spin structure with a magnetic propagation vector →/τ = (12,12,12) below the Néel temperature (TN ~ 5.7 K). Only the Gd ions carry a magnetic moment forming an antiferromagnetic structure with magnetic representation Γ6. For the ferromagnetic GdFe2Zn20 compound, an extensive investigation was performed at low temperature and under magnetic field using XANES and XMCD. Amore » strong XMCD signal of about 12.5% and 9.7% is observed below the Curie temperature (TC ~ 85K) at the Gd L2 and L3 edges, respectively. In addition, a small magnetic signal of about 0.06% of the jump is recorded at the Zn K edge, suggesting that the Zn 4p states are spin polarized by the Gd 5d extended orbitals.« less

  18. Comparative Study of the Defect Point Physics and Luminescence of the Kesterites Cu2ZnSnS4 and Cu2ZnSnSe4 and Chalcopyrite Cu(In,Ga)Se2: Preprint

    SciTech Connect (OSTI)

    Romero, M. J.; Repins, I.; Teeter, G.; Contreras, M.; Al-Jassim, M.; Noufi, R.

    2012-08-01

    In this contribution, we present a comparative study of the luminescence of the kesterites Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) and their related chalcopyrite Cu(In,Ga)Se2 (CIGSe). Luminescence spectroscopy suggests that the electronic properties of Zn-rich, Cu-poor kesterites (both CZTS and CZTSe) and Cu-poor CIGSe are dictated by fluctuations of the electrostatic and chemical potentials. The large redshift in the luminescence of grain boundaries in CIGSe, associated with the formation of a neutral barrier is clearly observed in CZTSe, and, to some extent, in CZTS. Kesterites can therefore replicate the fundamental electronic properties of CIGSe.

  19. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    SciTech Connect (OSTI)

    Johnson, Raegan Lynn

    2005-08-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  20. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    SciTech Connect (OSTI)

    Venkatesh, S.; Roqan, I. S.; Franklin, J. B.; Ryan, M. P.; McLachlan, M. A.; Alford, N. M.; Lee, J.-S.; Ohldag, Hendrik

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  1. Ab initio study of the structural, electronic and optical properties of ZnTe compound

    SciTech Connect (OSTI)

    Bahloul, B.; Deghfel, B.; Amirouche, L.; Bounab, S.; Bentabet, A.; Bouhadda, Y.; Fenineche, N.

    2015-03-30

    Structural, electronic and optical properties of ZnTe compound were calculated using Density Functional Theory (DFT) based on the pseudopotentials and planewaves (PP-PW) method as implemented in the ABINIT computer code, where the exchange–correlation functional is approximated using the local density approximation (LDA) and the generalized gradient approximation (GGA). The obtained results from either LDA or GGa calculation for lattice parameter, energy band gap and optical parameters, such as the fundamental absorption edge, the peaks observed in the imaginary part of the dielectric function, the macroscopic dielectric constants and the optical dielectric constant, are compared with the available theoretical results and experimental data.

  2. Intrinsic stage I crack propagation in Al-Zn-Mg single crystals

    SciTech Connect (OSTI)

    Petit, J.; Kosche, K.; Gudladt, H.J. Daimler-Benz AG, Stuttgart, Max-Planck-Institut fuer Metallforschung, Stuttgart, )

    1992-04-01

    A clear identification has been achieved for intrinsic stage I fatigue-crack propagation in single crystals of a high-purity Al-Zn-Mg alloy. The intrinsic stage I regime is noted to be much faster than intrinsic stage II for comparable loading conditions. The 'shielding' effect related to stage I-like propagation is significantly more important than anticipated on the basis of the conventional comparison to stage II. The propagation of a small surface crack growing in stage I is comparable to that of intrinsic stage I in single crystals rather than to either stage I or stage II in polycrystals. 11 refs.

  3. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  4. Surface relief produced by diffusion induced boundary migration in Cu-Zn

    SciTech Connect (OSTI)

    Tsai, Y.S.; Meyrick, G.; Shewmon, P.G.

    1984-03-01

    Experimental observations are presented that demonstrate that diffusion induced grain boundary migration in copper foils exposed to zinc vapor, from a Cu-15 pct Zn alloy, can be studied directl after treatment without etching. The general characteristics of migration are in accord with previous investigations, but novel changes in the surface topography are described. Pits were formed on the surface of areas swept by boundary migration; also, the surface was often converted into a series of corrugations. The formation of pits suggests that the grain boundary diffusivity of zinc exceeds that of copper. The corrugations are believed to indicate that boundaries sometimes move in an intermittent manner.

  5. Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

    SciTech Connect (OSTI)

    Garg, T. Kulkarni, A. R.; Venkataramani, N.; Sahu, B. N.; Prasad, Shiva

    2014-04-24

    In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150C to 650C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.

  6. Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

    SciTech Connect (OSTI)

    Ruoho, Mikko Pale, Ville; Erdmanis, Mikhail; Tittonen, Ilkka

    2013-11-11

    We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.

  7. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    SciTech Connect (OSTI)

    Robertson, John; Guo, Yuzheng

    2014-04-21

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  8. Microsized structures assisted nanostructure formation on ZnSe wafer by femtosecond laser irradiation

    SciTech Connect (OSTI)

    Wang, Shutong; Feng, Guoying E-mail: zhoush@scu.edu.cn

    2014-12-22

    Micro/nano patterning of ZnSe wafer is demonstrated by femtosecond laser irradiation through a diffracting pinhole. The irradiation results obtained at fluences above the ablation threshold are characterized by scanning electron microscopy. The microsized structure with low spatial frequency has a good agreement with Fresnel diffraction theory. Laser induced periodic surface structures and laser-induced periodic curvelet surface structures with high spatial frequency have been found on the surfaces of microsized structures, such as spikes and valleys. We interpret its formation in terms of the interference between the reflected laser field on the surface of the valley and the incident laser pulse.

  9. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect (OSTI)

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  10. Si/ZnO nanorods/Ag/AZO structures as promising photovoltaic plasmonic cells

    SciTech Connect (OSTI)

    Placzek-Popko, E. Gwozdz, K.; Gumienny, Z.; Zielony, E.; Jacak, W.; Pietruszka, R.; Witkowski, B. S.; Wachnicki, Ł.; Gieraltowska, S.; Chang, Liann-Be

    2015-05-21

    The test structures for photovoltaic (PV) applications based on zinc oxide nanorods (NRs) that were grown using a low-temperature hydrothermal method on p-type silicon substrates (100) covered with Ag nanoparticles (NPs) were studied. The NPs of three different diameters, i.e., 5–10 nm, 20-30 nm, and 50–60 nm, were deposited using a sputtering method. The morphology and crystallinity of the structures were confirmed by scanning electron microscopy and Raman spectroscopy. It was found that the nanorods have a hexagonal wurtzite structure. An analysis of the Raman and photoluminescence spectra permitted the identification of the surface modes at 476 cm{sup −1} and 561 cm{sup −1}. The presence of these modes is evidence of nanorods oriented along the wurtzite c-axis. The NRs with Ag NPs were covered with a ZnO:Al (AZO) layer that was grown using the low-temperature atomic layer deposition technique. The AZO layer served as a transparent ohmic contact to the ZnO nanorods. The applicability of the AZO layer for this purpose and the influence of the Ag nanoparticles on the effectiveness of light acquisition by such prepared PV cells were checked by reflectance and transmittance measurements of the AZO/glass and AZO/NPs/glass reference structures. Based on these studies, the high-energy transmittance edge was assigned to the ZnO energy gap, although it is blueshifted with respect to the bulk ZnO energy gap because of Al doping. It was also shown that the most optimal PV performance is obtained from a structure containing Ag nanoparticles with a diameter of 20–30 nm. This result is confirmed by the current-voltage measurements performed with 1-sun illumination. The structures show a plasmonic effect within the short wavelength range: the PV response for the structure with Ag nanoparticles is twice that of the structure without the nanoparticles. However, the influence of the Ag nanoparticle diameters on the plasmonic effect is ambiguous.

  11. Interband emission energy in wurtzite GaN/Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O strained quantum dots

    SciTech Connect (OSTI)

    Minimala, N. S.; Peter, A. John

    2014-04-24

    The effects of geometrical confinement on the exciton binding energies and thereby the interband emission energy are investigated in wurtzite /Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O quantum dots taking into account the geometrical confinement. The calculations are performed with the same barrier height of both the materials. The effects of strain and the internal electric field, induced by spontaneous and piezoelectric polarization, are taken into consideration in all the calculations.

  12. Influence of solvent on the morphology and photocatalytic properties of ZnS decorated CeO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Raubach, Cristiane W. Polastro, Lisnias; Ferrer, Mateus M.; Perrin, Andre; Perrin, Christiane; Albuquerque, Anderson R.; Buzolin, Prescila G. C.; Sambrano, Julio R.; Santana, Yuri B. V. de; Varela, Jos A.; Longo, Elson

    2014-06-07

    Herein, we report a theoretical and experimental study on the photocatalytic activity of CeO{sub 2} ZnS, and ZnS decorated CeO{sub 2} nanoparticles prepared by a microwave-assisted solvothermal method. Theoretical models were established to analyze electron transitions primarily at the interface between CeO{sub 2} and ZnS. As observed, the particle morphology strongly influenced the photocatalytic degradation of organic dye Rhodamine B. A model was proposed to rationalize the photocatalytic behavior of the prepared decorated systems taking into account different extrinsic and intrinsic defect distributions, including order-disorder effects at interfacial and intra-facial regions, and vacancy concentration.

  13. Interaction between O{sub 2} and ZnO films probed by time-dependent second-harmonic generation

    SciTech Connect (OSTI)

    Andersen, S. V.; Vandalon, V.; Bosch, R. H. E. C.; Loo, B. W. H. van de; Kessels, W. M. M.; Pedersen, K.

    2014-02-03

    The interaction between O{sub 2} and ZnO thin films prepared by atomic layer deposition has been investigated by time-dependent second-harmonic generation, by probing the electric field induced by adsorbed oxygen molecules on the surface. The second-harmonic generated signal decays upon laser exposure due to two-photon assisted desorption of O{sub 2}. Blocking and unblocking the laser beam for different time intervals reveals the adsorption rate of O{sub 2} onto ZnO. The results demonstrate that electric field induced second-harmonic generation provides a versatile non-contact probe of the adsorption kinetics of molecules on ZnO thin films.

  14. Atom-probe tomographic study of interfaces of Cu{sub 2}ZnSnS{sub 4} photovoltaic cells

    SciTech Connect (OSTI)

    Tajima, S. Asahi, R.; Itoh, T.; Hasegawa, M.; Ohishi, K.; Isheim, D.; Seidman, D. N.

    2014-09-01

    The heterophase interfaces between the CdS buffer layer and the Cu{sub 2}ZnSnS{sub 4} (CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573 K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

  15. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  16. Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

    SciTech Connect (OSTI)

    Nader, Nima Vangala, Shivashankar; Hendrickson, Joshua R.; Leedy, Kevin D.; Cleary, Justin W.; Look, David C.; Guo, Junpeng

    2015-11-07

    Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmon theoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes.

  17. Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

    SciTech Connect (OSTI)

    Kesim, Yunus E. Battal, Enes; Okyay, Ali K.

    2014-07-15

    Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (415 ?m) infrared absorber.

  18. Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

    DOE Patents [OSTI]

    Hoffbauer, Mark A.; Prettyman, Thomas H.

    2001-01-01

    Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

  19. One-photon band gap engineering of borate glass doped with ZnO for photonics applications

    SciTech Connect (OSTI)

    Abdel-Baki, Manal; Abdel-Wahab, Fathy A.; El-Diasty, Fouad

    2012-04-01

    Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

  20. Cation ordering and effect of biaxial strain in double perovskite CsRbCaZnCl6

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pilania, G.; Uberuaga, B. P.

    2015-03-19

    Here, we investigate the electronic structure, energetics of cation ordering, and effect of biaxial strain on double perovskite CsRbCaZnCl6 using first-principles calculations based on density functional theory. The two constituents (i.e., CsCaCl3 and RbZnCl3) forming the double perovskite exhibit a stark contrast. While CsCaCl3 is known to exist in a cubic perovskite structure and does not show any epitaxial strain induced phase transitions within an experimentally accessible range of compressive strains, RbZnCl3 is thermodynamically unstable in the perovskite phase and exhibits ultra-sensitive response at small epitaxial strains if constrained in the perovskite phase. We show that combining the two compositionsmore » in a double perovskite structure not only improves overall stability but also the strain-polarization coupling of the material. Our calculations predict a ground state with P4/nmm space group for the double perovskite, where A-site cations (i.e., Cs and Rb) are layer-ordered and B-site cations (i.e., Ca and Zn) prefer a rocksalt type ordering. The electronic structure and bandgap in this system are shown to be quite sensitive to the B-site cation ordering and is minimally affected by the ordering of A-site cations. We find that at experimentally accessible compressive strains CsRbCaZnCl6 can be phase transformed from its paraelectric ground state to an antiferroelectric state, where Zn atoms contribute predominantly to the polarization. Furthermore, both energy difference and activation barrier for a transformation between this antiferroelectric state and the corresponding ferroelectric configuration are predicted to be small. As a result, the computational approach presented here opens a new pathway towards a rational design of novel double perovskites with improved strain response and functionalities.« less

  1. Carbonaceous spheresan unusual template for solid metal oxide mesoscale spheres: Application to ZnO spheres

    SciTech Connect (OSTI)

    Patrinoiu, Greta; Caldern-Moreno, Jose Maria; Culita, Daniela C. [Illie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania); Birjega, Ruxandra [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box Mg27, Magurele, Bucharest (Romania); Ene, Ramona [Ilie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania); Carp, Oana, E-mail: ocarp@icf.ro [Ilie Murgulescu Institute of Physical Chemistry, Romanian Academy, Splaiul Independentei 202, 060021 Bucharest (Romania)

    2013-06-15

    A green template route for the synthesis of mesoscale solid ZnO spheres was ascertained. The protocol involves a double coating of the carbonaceous spheres with successive layers of zinc-containing species by alternating a non-ultrasound and ultrasound-assisted deposition, followed by calcination treatments. The composites were characterized by FTIR spectroscopy, thermal analysis, scanning electron microscopy while the obtained ZnO spheres by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopy, N{sub 2} adsorptiondesorption isotherms and photoluminescence investigations. A growth mechanism of the solid spheres is advanced based on these results. While the spheres' diameters and the mean size values of ZnO are independent on deposition order, the surface area and the external porosity are fairly dependent. The photoluminescence measurements showed interesting emission features, with emission bands in the violet to orange region. The spheres present high photocatalytical activity towards the degradation of phenol under UV irradiation, the main reaction being its mineralization. - Graphical abstract: A novel and eco-friendly methodology for the synthesis of mesoscale solid ZnO spheres was developed. The protocol involves a double coating of the starch-derived carbonaceous spheres with successive layers of zinc-containing species by alternating a non-ultrasound and ultrasound-assisted deposition, followed by calcination treatments. - Highlights: ZnO solid spheres are obtained via a template route using carbonaceous spheres. Two-step coatings of interchangeable order are used as deposition procedure. The coating procedure influences the porosity and surface area. ZnO spheres exhibited interesting visible photoluminescence properties. Solid spheres showed photocatalytical activity in degradation of phenol.

  2. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  3. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Basset, D.M. Abdel

    2011-11-15

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  4. Morphology and structure features of ZnAl{sub 2}O{sub 4} spinel nanoparticles prepared by matrix-isolation-assisted calcination

    SciTech Connect (OSTI)

    Du, Xuelian; Li, Liqiang; Zhang, Wenxing; Chen, Wencong; Cui, Yuting

    2015-01-15

    Graphical abstract: The substrate ZnO as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. High purity, well-dispersed, and single-crystal ZnAl{sub 2}O{sub 4} nanoparticles with 3.72 eV band gap were obtained. - Abstract: Well-dispersed ZnAl{sub 2}O{sub 4} spinel nanoparticles with an average crystalline size of 25.7 nm were synthesized successfully and easily by polymer-network and matrix-isolation-assisted calcination. The product microstructure and features were investigated by X-ray diffractometry, thermogravimetric and differential thermal analysis, Fourier transform-infrared spectroscopy, N{sub 2} adsorptiondesorption isotherms, and energy dispersive X-ray spectra. The morphology and optical performance of the as-prepared ZnAl{sub 2}O{sub 4} nanoparticles were characterized by scanning electron microscope, transmission electron microscopy, and photoluminescence spectrometer. Experimental results indicate that excess ZnO acted as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. Then, high purity and well-dispersed ZnAl{sub 2}O{sub 4} nanoparticles with single-crystal structure were obtained.

  5. The effect of Au and Ni doping on the heavy fermion state of the Kondo lattice antiferromagnet CePtZn

    SciTech Connect (OSTI)

    Dhar, S. K.; Aoki, Y.; Suemitsu, B.; Miyazaki, R.; Provino, A.; Manfrinetti, P.

    2014-05-07

    We have probed the effect of doping CePtZn with Au and Ni and also investigated in detail the magnetic behavior of the iso-structural CeAuZn. A magnetic ground state is observed in both CePt{sub 0.9}Au{sub 0.1}Zn and CePt{sub 0.9}Ni{sub 0.1}Zn with T{sub N}?=?2.1 and 1.1?K and the coefficient of the linear term of electronic heat capacity ??=?0.34 and 0.9?J/mol K{sup 2}, respectively. The corresponding values for CePtZn are 1.7?K and 0.6?J/mol K{sup 2}. The altered values of T{sub N} and ? show that the electronic correlations in CePtZn are affected by doping with Au and Ni. CeAuZn orders magnetically near 1.7?K and its electrical resistivity shows a normal metallic behavior. Together with a ? of 0.022?J/mol K{sup 2} the data indicate a weak 4f-conduction electron hybridization in CeAuZn characteristic of normal trivalent cerium based systems.

  6. CdS and CdS/CdSe sensitized ZnO nanorod array solar cells prepared by a solution ions exchange process

    SciTech Connect (OSTI)

    Chen, Ling; Gong, Haibo; Zheng, Xiaopeng; Zhu, Min; Zhang, Jun; Yang, Shikuan; Cao, Bingqiang

    2013-10-15

    Graphical abstract: - Highlights: CdS and CdS/CdSe quantum dots are assembled on ZnO nanorods by ion exchange process. The CdS/CdSe sensitization of ZnO effectively extends the absorption spectrum. The performance of ZnO/CdS/CdSe cell is improved by extending absorption spectrum. - Abstract: In this paper, cadmium sulfide (CdS) and cadmium sulfide/cadmium selenide (CdS/CdSe) quantum dots (QDs) are assembled onto ZnO nanorod arrays by a solution ion exchange process for QD-sensitized solar cell application. The morphology, composition and absorption properties of different photoanodes were characterized with scanning electron microscope, transmission electron microscope, energy-dispersive X-ray spectrum and Raman spectrum in detail. It is shown that conformal and uniform CdS and CdS/CdSe shells can grow on ZnO nanorod cores. Quantum dot sensitized solar cells based on ZnO/CdS and ZnO/CdS/CdSe nanocable arrays were assembled with gold counter electrode and polysulfide electrolyte solution. The CdS/CdSe sensitization of ZnO can effectively extend the absorption spectrum up to 650 nm, which has a remarkable impact on the performance of a photovoltaic device by extending the absorption spectrum. Preliminary results show one fourth improvement in solar cell efficiency.

  7. Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

    SciTech Connect (OSTI)

    Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.

    2011-05-15

    Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

  8. Enhancement of surface phonon modes in the Raman spectrum of ZnSe nanoparticles on adsorption of 4-mercaptopyridine

    SciTech Connect (OSTI)

    Islam, Syed K.; Lombardi, John R.

    2014-02-21

    By chemically etching a thin film of crystalline ZnSe with acid, we observe a strong Raman enhancement of the surface phonon modes of ZnSe on adsorption of a molecule (4-mercaptopyridine). The surface is composed of oblate hemi-ellipsoids, which has a large surface-to-bulk ratio. The assignment of the observed modes (at 248 and 492 cm{sup −1}) to a fundamental and first overtone of the surface optical mode is consistent with observations from high-resolution electron energy loss spectroscopy as well as calculations.

  9. Energy levels and zero field splitting parameter for Fe{sup 2+} doped in ZnS

    SciTech Connect (OSTI)

    Ivaşcu, Simona

    2013-11-13

    The aim of present paper is to report the results on the modeling of the crystal field parameters of Fe{sup 2+} doped in host matrix ZnS, simulate the energy levels scheme and calculate the zero field splitting parameter D of such system. The crystal field parameters were modeled in the frame of the superposition model of crystal field and the simulation of the energy levels scheme and calculation of the zero field splitting parameters done by diagonalization the Hamiltonian of Fe{sup 2+}:ZnS system. The obtained results were disscused and compared with experimental data. Satisfactory agreement have been obtained.

  10. In-situ optical transmission electron microscope study of exciton phonon replicas in ZnO nanowires by cathodoluminescence

    SciTech Connect (OSTI)

    Yang, Shize; Tian, Xuezeng; Wang, Lifen; Wei, Jiake; Qi, Kuo; Li, Xiaomin; Xu, Zhi E-mail: xdbai@iphy.ac.cn Wang, Wenlong; Zhao, Jimin; Bai, Xuedong E-mail: xdbai@iphy.ac.cn; Wang, Enge E-mail: xdbai@iphy.ac.cn

    2014-08-18

    The cathodoluminescence spectrum of single zinc oxide (ZnO) nanowires is measured by in-situ optical Transmission Electron Microscope. The coupling between exciton and longitudinal optical phonon is studied. The band edge emission varies for different excitation spots. This effect is attributed to the exciton propagation along the c axis of the nanowire. Contrary to free exciton emission, the phonon replicas are well confined in ZnO nanowire. They travel along the c axis and emit at the end surface. Bending strain increases the relative intensity of second order phonon replicas when excitons travel along the c-axis.

  11. Monoclinically distorted perovskites, A{sub 2}ZnTiO{sub 6} (A=Pr, Gd): Rietveld refinement, and dielectric studies

    SciTech Connect (OSTI)

    Das, Nibedita; Nath, Masood A.; Thakur, Gohil S.; Thirumal, M.; Ganguli, Ashok K.

    2015-09-15

    Double perovskite related oxide A{sub 2}ZnTiO{sub 6}A=Pr, Gd were synthesized by the solid state reaction method at 1523 K. The structure and microstructure of the compounds were studied by X-ray, SAED and FESEM. Rietveld refinement of the powder X-ray analysis shows that the compounds crystallizes in monoclinic space group P2{sub 1}/n (a{sup +}b{sup −}b{sup −}) with unit cell parameter √2a{sub p}×√2a{sub p}×2a{sub p} (a=5.5026(1) Å, b=5.6305(1) Å, c=7.8149(1) Å, β=90.02(1)° for Pr{sub 2}ZnTiO{sub 6} and a=5.3621(1) Å, b=5.6565(2) Å, c=7.6779(2) Å and β=90.264(2)° for Gd{sub 2}ZnTiO{sub 6}. Electron diffraction study confirms P2{sub 1}/n symmetry of the oxides. The monoclinic distortion is larger in Gd{sub 2}ZnTiO{sub 6} than Pr{sub 2}ZnTiO{sub 6} which is associated with the tolerance factor and the tilting angle of ZnO{sub 6} and TiO{sub 6} octahedra (ϕ=13.64° for Pr{sub 2}ZnTiO{sub 6} and 16.51° for Gd{sub 2}ZnTiO{sub 6}). The compounds are highly ordered. The charge and size difference between B site cations are the driving force for the ordering of the B′O{sub 6} and B″O{sub 6} octahedra. Pr{sub 2}ZnTiO{sub 6} shows a dielectric constant of 27 and dielectric loss of 0.003 while Gd{sub 2}ZnTiO{sub 6} has a dielectric constant of 17 and dielectric loss of 0.005 measured at 1 MHz. - Graphical abstract: Synthesis of new double perovskite dielectric material with very low dielectric loss. - Highlights: • Synthesis of new monoclinically distorted double perovskite (Pr{sub 2}ZnTiO{sub 6}). • Synthesis of monoclinically distorted double perovskite (Gd{sub 2}ZnTiO{sub 6}). • Selected area electron diffraction study of A{sub 2}ZnTiO{sub 6} (A=Pr, Gd). • Study of dielectric properties of A{sub 2}ZnTiO{sub 6} (A=Pr, Gd)

  12. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  13. Self-assembled Ag nanoparticle network passivated by a nano-sized ZnO layer for transparent and flexible film heaters

    SciTech Connect (OSTI)

    Seo, Ki-Won; Kim, Han-Ki; Kim, Min-Yi; Chang, Hyo-Sik

    2015-12-15

    We investigated a self-assembled Ag nanoparticle network electrode passivated by a nano-sized ZnO layer for use in high-performance transparent and flexible film heaters (TFFHs). The low temperature atomic layer deposition of a nano-sized ZnO layer effectively filled the uncovered area of Ag network and improved the current spreading in the self-assembled Ag network without a change in the sheet resistance and optical transmittance as well as mechanical flexibility. The time-temperature profiles and heat distribution analysis demonstrate that the performance of the TFTH with the ZnO/Ag network is superior to that of a TFFH with Ag nanowire electrodes. In addition, the TFTHs with ZnO/Ag network exhibited better stability than the TFFH with a bare Ag network due to the effective current spreading through the nano-sized ZnO layer.

  14. Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

    SciTech Connect (OSTI)

    Miyata, Toshihiro; Honma, Yasunori; Minami, Tadatsugu

    2007-07-15

    Highly transparent and conductive B-doped ZnO (BZO) thin films have been prepared by a newly developed vacuum arc plasma evaporation method that provided high-rate film depositions using sintered BZO pellets and fragments. The obtained electrical and optical properties of the deposited BZO thin films were considerably affected by the deposition conditions as well as the preparation method of the BZO pellets and fragments used. The lowest thin film resistivity was obtained with a B doping content [B/(B+Zn) atomic ratio] of approximately 1 at. %. A resistivity as low as 5x10{sup -4} {omega} cm and an average transmittance above about 80% in the wavelength range of 400-1300 nm were obtained in BZO films prepared with a thickness above approximately 400 nm at a substrate temperature of 200 deg. C. In addition, a low resistivity of 7.97x10{sup -4} {omega} cm and average transmittances above about 80% in the visible wavelength range were obtained in a BZO film prepared at a substrate temperature of 100 deg. C and an O{sub 2} gas flow rate of 10 SCCM (SCCM denotes cubic centimeter per minute at STP). The deposition rate of BZO films was typically 170 nm/min with a cathode plasma power of 4.5 kW.

  15. Conduction below 100 °C in nominal Li6ZnNb4O14

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Yunchao; Paranthaman, Mariappan Parans; Gill, Lance W.; Edward W. Hagaman; Wang, Yangyang; Sokolov, Alexei P.; Dai, Sheng; Ma, Cheng; Chi, Miaofang; Veith, Gabriel M.; et al

    2015-09-15

    The increasing demand for a safe rechargeable battery with a high energy density per cell is driving a search for a novel solid electrolyte with a high Li+ or Na+ conductivity that is chemically stable in a working Li-ion or Na-ion battery. Li6ZnNb4O14 has been reported to exhibit a σ Li > 10-2 S cm-1 at 250 °C, but to disproportionate into multiple phases on cooling from 850 °C to room temperature. An investigation of the room-temperature Li-ion conductivity in a porous pellet of a multiphase product of a nominal Li6ZnNb4O14 composition is shown to have bulk σ Li 3.3more » x 10-5 S cm-1 at room temperature that increases to 1.4 x 10-4 S cm-1 by 50 °C. 7Li MAS NMR spectra were fitted to two Lorentzian lines, one of which showed a dramatic increase with increasing temperature. As a result, a test for water stability indicates that Li+ may move to the particle and grain surfaces to react with adsorbed water as occurs in the garnet Li+ conductors.« less

  16. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    SciTech Connect (OSTI)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L.

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  17. Variation of the matter densities of nuclei from /sup 40/Ca to /sup 68/Zn

    SciTech Connect (OSTI)

    Papanicolas, C N; Sumner, W Q; Blair, J S; Bernstein, A M

    1981-01-01

    Analysis is made of elastic scattering of 42 MeV ..cap alpha..-particles from 19 nuclei from /sup 40/Ca to /sup 68/Zn in terms of a folding model, allowing determination of matter densities in the nuclear surface region relative to that of /sup 40/Ca. Specifically, values are deduced for the radii at which the matter density equals 0.016 nucleon/fm/sup 3/ as well as matter RMS radii. The relative sizes vary more slowly than A/sup 1/3/ between /sup 40/Ca and /sup 54/Fe and more rapidly than A/sup 1/3/ between /sup 54/Fe and /sup 68/Zn. The overall trend gives an increase with A/sup 1/3/ but with a bowing effect. The near equality of proton and matter RMS radii indicates that the neutron-proton radii are approximately equal to within the errors of the present analysis. The results are in reasonable agreement with those obtained with other hadronic probes and with calculated Hartree-Fock Bogolyubov densities.

  18. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect (OSTI)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  19. A Tb–Zn tetra(4-sulfonatophenyl)porphyrin hybrid: Preparation, structure, photophysical and electrochemical properties

    SciTech Connect (OSTI)

    Chen, Wen-Tong; Hu, Rong-Hua; Wang, Yin-Feng; Zhang, Xian; Liu, Juan

    2014-05-01

    A terbium-zinc porphyrin, i.e. [TbZn(TPPS)H{sub 3}O]{sub n} (1) (TPPS=tetra(4-sulfonatophenyl)porphyrin), has been obtained from a solvothermal reaction and structurally analyzed by single-crystal X-ray diffraction. Compound 1 is characteristic of a condensed three-dimensional (3-D) porous open framework with two types of infinite one-dimensional (1-D) chain-like structure. Compound 1 exhibits a void space of 215 Å{sup 3}, which is 9.2% of the unit-cell volume. TG/DTA measurement reveals that the framework of compound 1 is thermally stable up to 336 °C. In order to reveal its photophysical and electrochemical properties, we investigated compound 1 in detail with UV–vis spectra, fluorescence, quantum yield, luminescence lifetime, and CV/DPV. - Graphical abstract: A terbium–zinc porphyrin [TbZn(TPPS)H{sub 3}O]{sub n} has been obtained from a solvothermal reaction. It features a condensed 3-D porous open framework. It shows good thermal stability. - Highlights: • This paper reports a novel terbium–zinc porphyrin. • It features a novel condensed three-dimensional porous open framework. • The title compound is thermally stable up to 336 °C. • It is studied by UV–vis, fluorescence, quantum yield, lifetime, and CV/DPV.

  20. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    SciTech Connect (OSTI)

    Gupta, D.; Barman, P. B.; Hazra, S. K.; Dutta, D.; Kumar, M.; Som, T.

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  1. A single-molecule approach to ZnO defect studies: Single photons and single defects

    SciTech Connect (OSTI)

    Jungwirth, N. R.; Pai, Y. Y.; Chang, H. S.; MacQuarrie, E. R.; Nguyen, K. X.; Fuchs, G. D.

    2014-07-28

    Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here, we present confocal fluorescence measurements of individual defects in ZnO nanoparticles and sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range of ?560720?nm and typically exhibits two broad spectral peaks separated by ?150?meV. The excited state lifetimes range from 1 to 13?ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.

  2. Pyroelectric-field driven defects diffusion along c-axis in ZnO nanobelts under high-energy electron beam irradiation

    SciTech Connect (OSTI)

    Ding, Yong Liu, Ying; Niu, Simiao; Wu, Wenzhuo; Wang, Zhong Lin

    2014-10-21

    When ZnO nanobelts are exposed to a high-dose electron probe of several nanometers to hundred nanometers in diameter inside a transmission electron microscope, due to the radiolysis effect, part of oxygen atoms will be ejected into the vacuum and leaving a Zn-ion rich surface with a pit appearance at both the electron-entrance and electron-exit surfaces. At the same time, a temperature distribution is created around the electron probe due to local beam heating effect, which generates a unidirectional pyroelectric field. This pyroelectric field is strong enough to drive Zn ions moving along its positive c-axis direction as interstitial ions. In the first case, for the ZnO nanobelts with c-axis lie in their large surfaces, defects due to the aggregation of Zn interstitial ions will be formed at some distances of 3050 nm approximately along the c-axis direction from the electron beam illuminated area. Alternatively, for the ZnO nanobelts with (0001) planes as their large surfaces, the incident electron beam is along its c-axis and the generated pyroelectric field will drive the interstitial Zn-ions to aggregate at the Zn terminated (0001) surface where the local electrical potential is the lowest. Such electron beam induced damage in ZnO nanostructures is suggested as a result of Zn ion diffusion driven by the temperature gradient induced pyroelectric field along c-axis. Our study shows a radiation damage caused by electron beam in transmission electron microscopy, especially when the electron energy is high.

  3. Probing the effect of electron acceptor structure and morphology on charge separation in ZnO/P3HT hybrid photovoltaics using steady-state transient photoinduced absorption.

    SciTech Connect (OSTI)

    Davis, Robert Jackson; Lloyd, Matthew T.; Ferreira, Summer Rhodes; Lee, Yun-Ju; Hsu, Julia W. P.

    2010-04-01

    Hybrid cells based on ZnO/P3HT heterojunctions have the advantage of better device stability, but suffer poor photovoltaic performance compared to all-organic cells which use PCBM as the electron acceptor. The photovoltaic effect in these hybrid systems is accomplished via photoinduced charge separation at the interface between the absorbing polymer (P3HT) and the electron acceptor (ZnO). Efforts to improve device performance in these hybrid systems have centered on reducing the required diffusion length for P3HT excitons by creating bulk heterojunctions from either ZnO nanoparticles and P3HT or using ZnO precursors which convert in situ to form ZnO networks inside a polymer matrix. In this study, we use transient photoinduced absorption to access the lifetimes of P3HT polarons and excitons in bulk heterojunctions constructed using P3HT and ZnO nanoparticles or ZnO precursors and compare to those in planar ZnO/P3HT devices. Steady-state photoinduced absorption spectra of ZnO/P3HT show characteristic of sub-bandgap transitions associated with the formation of long-lived (msec lifetimes) radical cations (polarons) in P3HT. Similar short-lived polarons (psec lifetimes) are observed by picosecond transient photoinduced absorption in addition to infrared absorption due to excitons. Here we examine the lifetimes of both the excitons and polarons in ZnO:P3HT bulk heterojunctions using both picosecond and millisecond techniques in an effort to understand the effect of the structure and morphology of the electron acceptor on charge separation. We will also compare the relative photoexitation lifetimes, hence charge separation efficiency, for the planar and bulk heterojunction hybrid system to an all-organic P3HT:PCBM system.

  4. Synthesis, crystal structures, and physical properties of the new Zintl phases A{sub 21}Zn{sub 4}Pn{sub 18} (A=Ca, Eu; Pn=As, Sb)—Versatile arrangements of [ZnPn{sub 4}] tetrahedra

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Wang, Yi; Bobev, Svilen

    2015-07-15

    Four new Zintl phases, Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18} and Eu{sub 21}Zn{sub 4}Sb{sub 18} have been synthesized by metal flux reactions. Their structures have been established from single-crystal X-ray diffraction. Despite the similar chemical makeup and the identical formulae, the structures of the four compounds are not the same—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18} and Eu{sub 21}Zn{sub 4}As{sub 18} crystallize in the monoclinic space group C2/m (No. 12, Z=4) with the β-Ca{sub 21}Mn{sub 4}Sb{sub 18} structure type, while Eu{sub 21}Zn{sub 4}Sb{sub 18} adopts the Ba{sub 21}Cd{sub 4}Sb{sub 18} structure type with the orthorhombic space group Cmce (No. 64, Z=8). Both structures are based on ZnAs{sub 4} or ZnSb{sub 4} tetrahedra, linked in slightly different ways, and Ca{sup 2+} and Eu{sup 2+} cations that fill the space between them. The structural relationships between the title compounds and other known ternary phases with intricate structures are discussed. Electrical resistivity measurement on single-crystalline Eu{sub 21}Zn{sub 4}Sb{sub 18} suggests an intrinsic semiconductor behavior with a band gap of ca. 0.2 eV. The temperature dependent DC magnetization measurement on the same material indicates Curie–Weiss paramagnetism in the high-temperature regime, and a spontaneous antiferromagnetic ordering below 8 K. The calculated effective moments of Eu confirm the divalent Eu{sup 2+} ground state, as expected from the Zintl–Klemm concept. - Graphical abstract: The four new Zintl phases—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18}—crystallize in two structure types, showing the versatility in the arrangements of ZnAs{sub 4} and ZnSb{sub 4} tetrahedra. - Highlights: • Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18

  5. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

    SciTech Connect (OSTI)

    Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

    2015-01-15

    Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230 S/cm, which is ∼6× more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3 mm radius cylinder. As an example application, the authors fabricate an “all-fiber” pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50 g/cm{sup 2}), yielding a ∼10{sup 6}× current change under 200 g/cm{sup 2}. This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics.

  6. Photoluminescence Enhancement in CdSe/ZnSDNA linkedAu Nanoparticle Heterodimers Probed by Single Molecule Spectroscopy

    SciTech Connect (OSTI)

    Cotlet, M.; Maye, M.M.; Gang, O.

    2010-07-26

    Photoluminescence enhancement of up to 20 fold is demonstrated at the single molecule level for heterodimers composed of a core/shell CdSe/ZnS semiconductive quantum dot and a gold nanoparticle of 60 nm size separated by a 32 nm-long dsDNA linker when employing optical excitation at wavelengths near the surface plasmon resonance of the gold nanoparticle.

  7. Synthesis of Zn/Co/Fe-layered double hydroxide nanowires with controllable morphology in a water-in-oil microemulsion

    SciTech Connect (OSTI)

    Wu Hongyu; Jiao Qingze; Zhao Yun; Huang Silu; Li Xuefei; Liu Hongbo; Zhou Mingji

    2010-02-15

    The Zn/Co/Fe-layered double hydroxide nanowires were synthesized via a reverse microemulsion method by using cetyltrimethyl ammonium bromide (CTAB) /n-hexane/n-hexanol/water as Soft-Template. ZnSO{sub 4}, CoSO{sub 4}, Fe{sub 2}(SO{sub 4}){sub 3} and urea were used as raw materials. The influence of reaction temperature, time, urea concentration and Cn (molar ratio of cetyltrimethyl ammonium bromide to water) on the structure and morphology of Zn/Co/Fe-layered double hydroxides was investigated. The samples were characterized using Transmission Electron Microscopy (TEM), Inductively Coupled Plasma (ICP), X-ray Diffraction (XRD) and Infrared Absorption Spectrum (IR). The results indicate that higher temperature is beneficial to the formation of layered double hydroxides, but particles apart from nanowires could be produced if temperature is up to 120 deg. C. By varying the temperature, reaction time, urea concentration and Cn, we got the optimum conditions of synthesizing uniform Zn/Co/Fe-layered double hydroxide nanowires: 100 deg. C, more than 12 h, Cn: 30-33, urea concentration: 0.3 M.

  8. Anti-Site Defects in p-Type Co2ZnO4: Better than Perfect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    conductivity-just the opposite of the predicted effect for Doping Type II Co 2 ZnO 4 . ... 0.0 0.67 0.5 1.0 1.5 Configura onal Entropyk B 1.0 2.0 INVERSE As deposited T * ...

  9. Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition

    SciTech Connect (OSTI)

    Rai, R. C.; Guminiak, M.; Wilser, S.; Cai, B.; Nakarmi, M. L.

    2012-04-01

    We report the surface, structural, electronic, and optical properties of the epitaxial ZnO thin films grown on (0001) sapphire substrate at 600 deg. C by an electron-beam deposition technique. ZnO thin films have been deposited in an oxygen environment and post-deposition annealed to improve the stoichiometry and the crystal quality. In order to investigate the free exciton binding energy and the temperature dependence of the energy bandgap, we carried out variable temperature (78-450 K) transmittance measurements on ZnO thin films. The absorption data below the energy bandgap have been modeled with the Urbach tail and a free exciton, while the data above the gap have been modeled with the charge transfer excitations. The exciton binding energy is measured to be E{sub 0}= 64 {+-} 7 meV, and the energy band gaps of the ZnO film are measured to be E{sub g}-tilde 3.51 and 3.48 eV at 78 and 300 K, respectively. The temperature dependence of the energy gap has been fitted with the Varshni model to extract the fitting parameters {alpha}= 0.00020 {+-} 0.00002 eV/K, {beta}= 325 {+-} 20 K, and E{sub g} (T = 0 K) = 3.516 {+-} 0.0002 eV.

  10. Preparation, characterization of the Ta-doped ZnO nanoparticles and their photocatalytic activity under visible-light illumination

    SciTech Connect (OSTI)

    Kong Jizhou; Li Aidong; Zhai Haifa; Gong Youpin; Li Hui; Wu Di

    2009-08-15

    This paper describes a novel catalyst of the Ta-doped ZnO nanocrystals prepared by a modified polymerizable complex method using the water-soluble tantalum precursor as the sources of Ta. The catalysts were characterized by means of various analytical techniques as a function of Ta content (x=0-4 mol%) systematically. A remarkable advantage of the results was confirmed that dopant Ta enhanced the visible-light absorption of ZnO and the low-solubility tantalum doping could restrain the growth of crystal and minish the particle size. The relationship between the physicochemical property and the photocatalytic performance was discussed, and it was found that the photocatalytic activity in the photochemical degradation of methylene blue under visible-light irradiation (lambda>=420 nm) was dependent on the contents of the dopant, which could affect the particle size, concentration of surface hydroxyl groups and active hydrogen-related defect sites, and the visible-light absorption. The highest photocatalytic activity was obtained for the 1.0 mol% Ta-doped ZnO sample. - Graphical abstract: The addition of the tantalum into ZnO prepared by a modified polymerizable complex method not only restrains the growth of crystal, minish the particle size, but also changes the nanocrystal morphology.

  11. Passivation of Zn{sub 3}P{sub 2} substrates by aqueous chemical etching and air oxidation

    SciTech Connect (OSTI)

    Kimball, Gregory M.; Bosco, Jeffrey P.; Mueller, Astrid M.; Tajdar, Syed F.; Brunschwig, Bruce S.; Atwater, Harry A.; Lewis, Nathan S.

    2012-11-15

    Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn{sub 3}P{sub 2} surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn{sub 3}P{sub 2} substrates. Zn{sub 3}P{sub 2} substrates that were etched with Br{sub 2} in methanol exhibited surface recombination velocity values of 2.8 Multiplication-Sign 10{sup 4} cm s{sup -1}, whereas substrates that were further treated by aqueous HF-H{sub 2}O{sub 2} exhibited surface recombination velocity values of 1.0 Multiplication-Sign 10{sup 4} cm s{sup -1}. Zn{sub 3}P{sub 2} substrates that were etched with Br{sub 2} in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 Multiplication-Sign 10{sup 3} cm s{sup -1}, as well as improved ideality in metal/insulator/semiconductor devices.

  12. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  13. Co-assembly of Zn(SPh){sub 2} and organic linkers into helical and zig-zag polymer chains

    SciTech Connect (OSTI)

    Liu Yi; Yu Lingmin; Loo, Say Chye Joachim; Blair, Richard G.; Zhang Qichun

    2012-07-15

    Two novel one-dimensional coordination polymers, single helicate [Zn(SPh){sub 2}(TPyTA)(EG)]{sub n} (EG=ethylene glycol) (1) and zig-zag structure [Zn(SPh){sub 2}(BPyVB)]{sub n} (2), were synthesized under solvothermal conditions at 150 Degree-Sign C or room temperature by the co-assembly of Zn(SPh){sub 2} and organic linkers such as 2,4,6-tri(4-pyridyl)-1,3,5-triazine (TPyTA) and 1,3-bis(trans-4-pyridylvinyl)benzene (BPyVB). X-ray crystallography study reveals that both polymers 1 and 2 crystallize in space group P2{sub 1}/c of the monoclinic system. The solid-state UV-vis absorption spectra show that 1 and 2 have maxium absorption onsets at 400 nm and 420 nm, respectively. TGA analysis indicates that 1 and 2 are stable up to 110 Degree-Sign C and 210 Degree-Sign C. - Graphical abstract: Two novel one-dimensional coordination polymers, single helicate [Zn(SPh){sub 2}(TPyTA)(EG)]{sub n} (1) and zig-zag structure [Zn(SPh){sub 2}(BPyVB)]{sub n} (2), were synthesized. Solid-state UV-vis absorptions show that 1 and 2 have maxium absorption onsets at 400 nm and 420 nm, respectively. TGA analysis indicates that 1 and 2 are stable up to 110 Degree-Sign C and 210 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Two novel one-dimensional coordination polymers have been synthesized. Black-Right-Pointing-Pointer TPyTA results in helical structures in 1 while BPyVB leads to zig-zag chains in 2. Black-Right-Pointing-Pointer Solid-state UV-vis absorption spectra and TGA analysis of the title polymers were studied.

  14. Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating

    SciTech Connect (OSTI)

    Minami, Tadatsugu; Okada, Kenji; Miyata, Toshihiro; Nomoto, Juni-chi; Hara, Youhei; Abe, Hiroshi

    2009-07-15

    The preparation of transparent conducting impurity-doped ZnO thin films by both pulsed laser deposition (PLD) and magnetron sputtering deposition (MSD) using impurity-doped ZnO targets sintered with a newly developed energy saving millimeter-wave (28 GHz) heating technique is described. Al-doped ZnO (AZO) and V-co-doped AZO (AZO:V) targets were prepared by sintering with various impurity contents for 30 min at a temperature of approximately 1250 degree sign C in an air or Ar gas atmosphere using the millimeter-wave heating technique. The resulting resistivity and its thickness dependence obtainable in thin films prepared by PLD using millimeter-wave-sintered AZO targets were comparable to those obtained in thin films prepared by PLD using conventional furnace-sintered AZO targets; a low resistivity on the order of 3x10{sup -4} {Omega} cm was obtained in AZO thin films prepared with an Al content [Al/(Al+Zn) atomic ratio] of 3.2 at. % and a thickness of 100 nm. In addition, the resulting resistivity and its spatial distribution on the substrate surface obtainable in thin films prepared by rf-MSD using a millimeter-wave-sintered AZO target were almost the same as those obtained in thin films prepared by rf-MSD using a conventional powder AZO target. Thin films prepared by PLD using millimeter-wave-sintered AZO:V targets exhibited an improved resistivity stability in a high humidity environment. Thin films deposited with a thickness of approximately 100 nm using an AZO:V target codoped with an Al content of 4 at. % and a V content [V/(V+Zn) atomic ratio] of 0.2 at. % were sufficiently stable when long-term tested in air at 90% relative humidity and 60 degree sign C.

  15. Growth of residual stress-free ZnO films on SiO{sub 2}/Si substrate at room temperature for MEMS devices

    SciTech Connect (OSTI)

    Singh, Jitendra; Akhtar, Jamil; Ranwa, Sapana; Kumar, Mahesh

    2015-06-15

    ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO{sub 2}/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 10{sup 9} to 11.28 x 10{sup 9} dyne/cm{sup 2} with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ∼3.275 eV to ∼3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

  16. Preparation, characterization and photocatalytic activity of visible-light-driven plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites

    SciTech Connect (OSTI)

    Li, Xiaojuan Tang, Duanlian; Tang, Fan; Zhu, Yunyan; He, Changfa; Liu, Minghua Lin, Chunxiang; Liu, Yifan

    2014-08-15

    Highlights: A plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} photocatalyst has been successfully synthesized. Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites exhibit high visible light photocatalytic activity. Ag/AgBr/ZnFe{sub 2}O{sub 4} photocatalyst is stable and magnetically separable. - Abstract: A visible-light-driven plasmonic Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposite has been successfully synthesized via a depositionprecipitation and photoreduction through a novel one-pot process. X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and UVvis diffuse reflectance spectroscopy were employed to investigate the crystal structure, chemical composition, morphology, and optical properties of the as-prepared nanocomposites. The photocatalytic activities of the nanocomposites were evaluated by photodegradation of Rhodamine B (RhB) and phenol under visible light. The results demonstrated that the obtained Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposites exhibited higher photocatalytic activity as compared to pure ZnFe{sub 2}O{sub 4}. In addition, the sample photoreduced for 20 min and calcined at 500 C achieved the highest photocatalytic activity. Furthermore, the Ag/AgBr/ZnFe{sub 2}O{sub 4} nanocomposite has high stability under visible light irradiation and could be conveniently separated by using an external magnetic field.

  17. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    SciTech Connect (OSTI)

    Chebil, W.; Fouzri, A.; Fargi, A.; Azeza, B.; Zaaboub, Z.; and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  18. Growth, disorder, and physical properties of ZnSnN{sub 2}

    SciTech Connect (OSTI)

    Feldberg, N.; Aldous, J. D.; Linhart, W. M.; Phillips, L. J.; Durose, K.; Veal, T. D.; Stampe, P. A.; Kennedy, R. J.; Scanlon, D. O.; Vardar, G.; Field, R. L. III; Jen, T. Y.; Goldman, R. S.; Durbin, S. M.; Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260

    2013-07-22

    We examine ZnSnN{sub 2}, a member of the class of materials contemporarily termed “earth-abundant element semiconductors,” with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum.

  19. Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.

    2009-08-15

    The effect of the photonic band gap (stopband) of the photonic crystal, the synthesized SiO{sub 2} opal with embedded zinc oxide, on its luminescence in the violet spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra of the infiltrated opal depends on the diameter of the constituent nanoglobules, the volume fraction of zinc oxide, and on the signal's acceptance angle. It is found that, for the ZnO-opal nanocomposites, the emission intensity is decreased and the luminescence decay time is increased in the spatial directions, in which the photonic band gap coincides in spectral position with the luminescence peak of zinc oxide. The change in the decay time can be attributed to the change in the local density of photonic states in the photonic band gap.

  20. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect (OSTI)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G.; Gadallah, A.-S.; Rogers, D. J.

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  1. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuingmore » effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

  2. Process for the chemical preparation of high-field ZnO varistors

    DOE Patents [OSTI]

    Brooks, Robert A.; Dosch, Robert G.; Tuttle, Bruce A.

    1987-01-01

    Chemical preparation techniques involving co-precipitation of metals are used to provide micro-structural characteristics necessary in order to produce ZnO varistors and their precursors for high field applications. The varistors produced have homogeneous and/or uniform dopant distributions and a submicron average grain size with a narrow size distribution. Precursor powders are prepared via chemical precipitation techniques and varistors made by sintering uniaxially and/or isostatically pressed pellets. Using these methods, varistors were made which were suitable for high-power applications, having values of breakdown field, E.sub.B, in the 10-100 kV/cm range, .alpha.>30 and densities in the range of 65-99% of theoretical, depending on both composition and sintering temperature.

  3. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    SciTech Connect (OSTI)

    Hanyu, Yuichiro Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama ; Kumomi, Hideya; Hosono, Hideo; Frontier Research Center, Tokyo Institute of Technology, Yokohama; Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama

    2013-11-11

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300?C exhibit good operation characteristics; while those annealed at ?400?C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300430?C. A plausible structural model is suggested.

  4. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  5. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    SciTech Connect (OSTI)

    Prestgard, M. C.; Siegel, G.; Tiwari, A.; Roundy, R.; Raikh, M.

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  6. A process for the chemical preparation of high-field ZnO varistors

    DOE Patents [OSTI]

    Brooks, R.A.; Dosch, R.G.; Tuttle, B.A.

    1986-02-19

    Chemical preparation techniques involving co-precipitation of metals are used to provide microstructural characteristics necessary in order to produce ZnO varistors and their precursors for high field applications. The varistors produced have homogeneous and/or uniform dopant distributions and a submicron average grain size with a narrow size distribution. Precursor powders are prepared via chemical precipitation techniques and varistors made by sintering uniaxially and/or isostatically pressed pellets. Using these methods, varistors were made which were suitable for high-power applications, having values of breakdown field, E/sub B/, in the 10 to 100 kV/cm range, ..cap alpha.. > 30 and densities in the range of 65 to 99% of theoretical, depending on both composition and sintering temperature.

  7. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  8. Factors affecting initial permeability of Co-substituted Ni-Zn-Cu ferrites

    SciTech Connect (OSTI)

    Byun, T.Y.; Byeon, S.C.; Hong, K.S.; Kim, C.K.

    1999-09-01

    Iron deficient compositions of (Ni{sub 0.2}Cu{sub 0.2}Zn{sub 0.6}){sub 1.02{minus}x}Co{sub x}Fe{sub 1.98}O{sub 4} (0 {le} x {le} 0.05) were prepared to investigate their initial permeability dependence on cobalt contents. Extrinsic factors such as grain size and sintered density change little in samples sintered at 900 C, so their effects on permeability can be neglected. Intrinsic factors such as saturation magnetization, magnetocrystalline anisotropy (K{sub 1}) and magnetoelastic anisotropy (K{sub {sigma}}) can not account for the variation of initial permeability with Co content. Measurement of thermoelectric power shows that the concentration of cation vacancies increases with Co content. Therefore, the local induced anisotropy increases by the ordering of Co ions cia increased cation vacancy concentration. This increase in induced anisotropy results in the decrease of initial permeability.

  9. Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO{sub 4}

    SciTech Connect (OSTI)

    Lynch, David M.; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O.; Levin, Barnaby D. A.; Muller, David A.; Greene, Raymond G.

    2014-12-29

    Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO{sub 4} (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190?C, nanocrystalline films with an X-ray peak at 2??=?30 (009 planes) developed with increasing c-axis normal texturing up to 310?C. Under optimal conditions (310?C, 10% O{sub 2}), films exhibited a c-axis texture full-width half-maximum of 20. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of 9 over a 15 15?nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed.

  10. Experimental and Theoretical Pursuit of the Ultimate Conductivity in ZnO

    SciTech Connect (OSTI)

    Look, David C

    2014-12-22

    In this program, we and our colleagues at the Pacific Northwest National Laboratory (PNNL) had proposed nine areas of research. In most of these we made significant progress, as outlined below. Many of the results were published as listed at the end of the report. 1. Optimized growth of GZO in H2 2. Optimized growth of GZO in forming gas 3. Optimized growth of GZO in Ar with a subsequent anneal in H2 or forming gas 4. Optimized growth of GZO in Ar with a subsequent anneal in Zn vapor 5. Modeling of thickness effects and experimental verification 6. Measurements of thickness and optical mobility by ellipsometry 7. Low-temperature photoluminescence measurements and analysis 8. Transmission and reflectance measurements 9. Measurements of stability 10. Discussion: electrical characterization

  11. Spectroscopic properties of (PVA+ZnO):Mn{sup 2+} polymer films

    SciTech Connect (OSTI)

    Rani, Ch.; Raju, D. Siva; Bindu, S. Hima; Krishna, J. Suresh; Raju, Ch. Linga

    2015-05-15

    Electron Paramagnetic Resonance (EPR), optical absorption and infrared spectral studies have been carried out on Mn{sup 2+} ions doped in poly(vinyl alcohol) complexed with zinc oxide polymer films prepared by solution cast technique. The EPR spectra of 1 mol% Mn{sup 2+} ions doped polymer complex (PVA+ZnO) at room temperature exhibit sextet hyperfine structure (hfs), centered at 2.01. The spin-Hamiltonian parameter values indicate that the ground state of Mn{sup 2+} ion in d{sup 5} and the site symmetry around Mn{sup 2+} ions in tetragonally distorted octa hedral site. The optical absorption spectra exhibits two bands centered at 275nm at 437nm. The FTIR spectrum exhibits bands characteristic of stretching and banding vibrations of O-H, C-H and C=C groups.

  12. Polariton lasing in a ZnO microwire above 450?K

    SciTech Connect (OSTI)

    Xu, Dan; Xie, Wei; Liu, Wenhui; Wang, Jian; Zhang, Long; Wang, Yinglei; Zhang, Saifeng; Sun, Liaoxin; Shen, Xuechu; Chen, Zhanghai

    2014-02-24

    Exciton-polariton lasing in a one-dimensional ZnO microcavity is demonstrated at high temperature of 455?K. The massive occupation of the polariton ground state above a distinct pump power threshold is clearly demonstrated by using the angular resolved spectroscopy under non-resonant excitation. The temperature dependence of the polariton lasing threshold is well interpreted by two competing mechanisms, i.e., the thermodynamic and kinetic mechanisms. Michelson interference measurements are performed to investigate the temporal and spatial coherence of polariton laser, with the coherence time and coherence length being ?{sub c}?0.97?ps and r{sub c}?0.72?m at 440?K and 400?K, respectively.

  13. Co-Evaporated Cu2ZnSnSe4 Films and Devices

    SciTech Connect (OSTI)

    Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

    2012-06-01

    The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

  14. Origin of major donor states in In–Ga–Zn oxide

    SciTech Connect (OSTI)

    Nakashima, Motoki; Oota, Masashi; Ishihara, Noritaka; Nonaka, Yusuke; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi

    2014-12-07

    To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V{sub O}), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V{sub O} sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V{sub O} and H in crystalline InGaO{sub 3}(ZnO){sub m} (m = 1). The results indicate that when H is trapped in V{sub O}, a stable complex is created that serves as a shallow-level donor.

  15. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect (OSTI)

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  16. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    SciTech Connect (OSTI)

    Valenti, Ilaria; Valeri, Sergio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  17. Surface strain engineering through Tb doping to study the pressure dependence of exciton-phonon coupling in ZnO nanoparticles

    SciTech Connect (OSTI)

    Sharma, A.; Dhar, S. Singh, B. P.; Nayak, C.; Bhattacharyya, D.; Jha, S. N.

    2013-12-07

    A compressive hydrostatic strain has been found to develop in the ZnO lattice as a result of accumulation of Tb ions on the surface of the nanoparticles for Tb mole-fraction less than 0.04. This hydrostatic strain can be controlled up to ?14?GPa by varying the Tb mole-fraction. Here, we have utilized this novel technique of surface strain engineering through Tb doping for introducing hydrostatic compressive strain in the lattice to study the pressure dependent electronic and vibrational properties of ZnO nanoparticles. Our study reveals that when subjected to pressure, nanoparticles of ZnO behave quite differently than bulk in many aspects. Unlike bulk ZnO, which is reported to go through a wurtzite to rock-salt structural phase transition at ?8?GPa, ZnO nanoparticles do not show such transition and remain in wurtzite phase even at 14?GPa of pressure. Furthermore, the Grneisen parameters for the optical phonon modes are found to be order of magnitude smaller in ZnO nanoparticles as compared to bulk. Our study also suggests an increase of the dielectric constant with pressure, which is opposite to what has been reported for bulk ZnO. Interestingly, it has also been found that the exciton-phonon interaction depends strongly upon pressure in this system. The exciton-phonon coupling has been found to decrease as pressure increases. A variational technique has been adopted to theoretically calculate the exciton-LO phonon coupling coefficient in ZnO nanoparticles as a function of pressure, which shows a good agreement with the experimental results. These findings imply that surface engineering of ZnO nanoparticles with Tb could indeed be an efficient tool to enhance and control the optical performance of this material.

  18. The use of novel biodegradable, optically active and nanostructured poly(amide-ester-imide) as a polymer matrix for preparation of modified ZnO based bionanocomposites

    SciTech Connect (OSTI)

    Abdolmaleki, Amir; Nanotechnology and Advanced Materials Institute, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran ; Mallakpour, Shadpour; Nanotechnology and Advanced Materials Institute, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran ; Borandeh, Sedigheh

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer A novel biodegradable and nanostructured PAEI based on two amino acids, was synthesized. Black-Right-Pointing-Pointer ZnO nanoparticles were modified via two different silane coupling agents. Black-Right-Pointing-Pointer PAEI/modified ZnO BNCs were synthesized through ultrasound irradiation. Black-Right-Pointing-Pointer ZnO particles were dispersed homogeneously in PAEI matrix on nanoscale. Black-Right-Pointing-Pointer The effect of ZnO nanoparticles on the properties of synthesized polymer was examined. -- Abstract: A novel biodegradable and nanostructured poly(amide-ester-imide) (PAEI) based on two different amino acids, was synthesized via direct polycondensation of biodegradable N,N Prime -bis[2-(methyl-3-(4-hydroxyphenyl)propanoate)]isophthaldiamide and N,N Prime -(pyromellitoyl)-bis-L-phenylalanine diacid. The resulting polymer was characterized by FT-IR, {sup 1}H NMR, specific rotation, elemental analysis, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analysis. The synthesized polymer showed good thermal stability with nano and sphere structure. Then PAEI/ZnO bionanocomposites (BNCs) were fabricated via interaction of pure PAEI and ZnO nanoparticles. The surface of ZnO was modified with two different silane coupling agents. PAEI/ZnO BNCs were studied and characterized by FT-IR, XRD, UV/vis, FE-SEM and TEM. The TEM and FE-SEM results indicated that the nanoparticles were dispersed homogeneously in PAEI matrix on nanoscale. Furthermore the effect of ZnO nanoparticle on the thermal stability of the polymer was investigated with TGA and DSC technique.

  19. Synthesis, characterization and hydrophilic properties of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite film

    SciTech Connect (OSTI)

    Xu, Song; Huang, Hongwei; Wang, Conghe; Huang, Zhaohui; Wang, Chengbiao

    2015-05-15

    Highlights: • ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films have been successfully prepared via a sol–gel method. • It was deposited on glass slides through dip coating process. • 7% ZnFe{sub 2}O{sub 4}–TiO{sub 2} film exhibits a superhydrophilic property with a contact angle 0°. • The self-cleaning glasses also display antifogging property. - Abstract: ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films have been successfully prepared via a sol–gel method and deposited on glass slides through dip coating process. The hydrophilicity of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films was investigated by the contact angles measurements under different conditions, including heat treatment temperature, molar ratios of ZnFe{sub 2}O{sub 4} to TiO{sub 2} and coating layers. The results revealed that the 7 mol% ZnFe{sub 2}O{sub 4}-TiO{sub 2} composite film exhibits an excellent superhydrophilic performance with a contact angle 0°. Compared with normal glass, the self-cleaning glasses also display antifogging property. The transmittance of ZnFe{sub 2}O{sub 4}–TiO{sub 2} composite films was characterized by UV–vis spectra in details. Coating layers and different molar percents of ZnFe{sub 2}O{sub 4} all have impact on the light transmittance. Moreover, the structure and morphology of the ZnFe{sub 2}O{sub 4}–TiO{sub 2} sample were investigated by means of X-ray diffraction (XRD), energy dispersive X-ray spectrometry (EDS) and scanning electron microscopy (SEM)

  20. Methanol synthesis on ZnO(0001{sup }). IV. Reaction mechanisms and electronic structure

    SciTech Connect (OSTI)

    Frenzel, Johannes Marx, Dominik

    2014-09-28

    Methanol synthesis from CO and H{sub 2} over ZnO, which requires high temperatures and high pressures giving rise to a complex interplay of physical and chemical processes over this heterogeneous catalyst surface, is investigated using ab initio simulations. The redox properties of the surrounding gas phase are known to directly impact on the catalyst properties and thus, set the overall catalytic reactivity of this easily reducible oxide material. In Paper III of our series [J. Kiss, J. Frenzel, N. N. Nair, B. Meyer, and D. Marx, J. Chem. Phys. 134, 064710 (2011)] we have qualitatively shown that for the partially hydroxylated and defective ZnO(0001{sup }) surface there exists an intricate network of surface chemical reactions. In the present study, we employ advanced molecular dynamics techniques to resolve in detail this reaction network in terms of elementary steps on the defective surface, which is in stepwise equilibrium with the gas phase. The two individual reduction steps were investigated by ab initio metadynamics sampling of free energy landscapes in three-dimensional reaction subspaces. By also sampling adsorption and desorption processes and thus molecular species that are in the gas phase but close to the surface, our approach successfully generated several alternative pathways of methanol synthesis. The obtained results suggest an Eley-Rideal mechanism for both reduction steps, thus involving near-surface molecules from the gas phase, to give methanol preferentially over a strongly reduced catalyst surface, while important side reactions are of Langmuir-Hinshelwood type. Catalyst re-reduction by H{sub 2} stemming from the gas phase is a crucial process after each reduction step in order to maintain the catalyst's activity toward methanol formation and to close the catalytic cycle in some reaction channels. Furthermore, the role of oxygen vacancies, side reactions, and spectator species is investigated and mechanistic details are discussed based on

  1. Arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocables with tunable shell composition for efficient photovoltaics

    SciTech Connect (OSTI)

    Akram, Muhammad Aftab; Javed, Sofia; Xu, Jun; Mujahid, Mohammad; Lee, Chun-Sing

    2015-05-28

    Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} core/shell nanocables with tunable shell compositions over the full range of 0???x???1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In{sub x}Ga{sub 1?x}, ZnO/CuSe/(In{sub x}Ga{sub 1?x}){sub 2}Se{sub 3}, and ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2}, are well designed and successfully achieved. Composition-dependent influences of the CuIn{sub x}Ga{sub 1?x}Se{sub 2} shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J{sub SC}) but a decrease in open-circuit voltage (V{sub OC}) for the ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocable solar cells. An array of ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} nanocables with a length of ?1??m and a shell thickness of ?10?nm exhibits a bandgap of 1.20?eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5?G illumination at an intensity of 100 mW/cm{sup 2}. It dramatically surpasses that (0.22%) of the ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer.

  2. TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

    2009-01-01

    This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

  3. Crystal structure and magnetic properties and Zn substitution effects on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6}

    SciTech Connect (OSTI)

    Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Guo, Yanfeng, E-mail: Yangfeng.Guo@physics.ox.ac.uk [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Sun, Ying [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Matsushita, Yoshitaka [Materials Analysis Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan)

    2013-08-15

    The effects of substituting Co on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6} with Zn were investigated by synchrotron X-ray diffraction, magnetic susceptibility, isothermal magnetization, and specific heat measurements. To the best of our knowledge, this is the first report to describe the successful substitution of Co in Sr{sub 3}Co{sub 2}O{sub 6} with Zn. The substitution was carried out by a method involving high pressures and temperatures to obtain Sr{sub 3}CoZnO{sub 6}, which crystalized into a K{sub 4}CdCl{sub 6}-derived rhombohedral structure with a space group of R-3c, similar to the host compound. With the Zn substitution, the Ising-type magnetic anisotropy of the host compound remarkably reduced; the newly formed Sr{sub 3}CoZnO{sub 6} became magnetically isotropic with Heisenberg-type characteristics. This could probably be ascribed to the establishment of a different interaction pathway, Co{sup 4+}(S=1/2)OZn{sup 2+}(S=0)OCo{sup 4+}(S=1/2). Details of the magnetic properties of Zn substituted Sr{sub 3}Co{sub 2}O{sub 6} were reported. - Graphical abstract: Crystal structure of the spin-chain compound Sr{sub 3}CoZnO{sub 6} synthesized at 6 GPa. Zn atoms preferably occupy the trigonal prism sites rather than the octahedral sites. As a result, the compound is much magnetically isotropic. Highlights: Effects of substituting Co with Zn on spin-chain magnetism of Sr{sub 3}Co{sub 2}O{sub 6} were studied. High-pressure synthesis resulted in a solid solution of Sr{sub 3}CoZnO{sub 6}. Sr{sub 3}CoZnO{sub 6} showed more isotropic magnetism than the host Sr{sub 3}Co{sub 2}O{sub 6}.

  4. Taheri-Saramad x-ray detector (TSXD): A novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane

    SciTech Connect (OSTI)

    Taheri, A. Saramad, S.; Ghalenoei, S.; Setayeshi, S.

    2014-01-15

    A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

  5. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

    SciTech Connect (OSTI)

    Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L.; Shuvayev, Vladimir; Deligiannakis, Vasilios; Tamargo, Maria C.; Ludwig, Jonathan; Smirnov, Dmitry; Wang, Alice

    2014-10-28

    For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

  6. Structure and magnetic properties of three-dimensional (La,Sr)MnO{sub 3} nanofilms on ZnO nanorod arrays

    SciTech Connect (OSTI)

    Gao Haiyong; Gao Puxian; Shimpi, Paresh; Guo Yanbing; Cai Wenjie; Lin Huijan; Staruch, M.; Jain, Menka

    2011-03-21

    Three-dimensional (3D) cubic perovskite (La,Sr)MnO{sub 3} (LSMO) nanofilms have been deposited on ZnO nanorod arrays with controlled dimensionality and crystallinity by radio frequency (rf) magnetron sputtering and post thermal annealing. Compared to the two-dimensional (2D) LSMO nanofilm on flat Si, the structure and magnetic properties of 3D LSMO nanofilms on ZnO nanorod arrays have a strong anisotropic morphology and thickness dependence. Ferromagnetic property has been observed in both 2D and 3D LSMO nanofilms while a ferromagnetic-superparamagnetic transition was revaled in 3D LSMO nanofilms on ZnO nanorod array with decreasing nanofilm thickness, due to a large surface dispersion effect. The LSMO/ZnO nanofilm/nanorod structures could open up new avenues for intriguing magnetic properties studies and applications of nanoscale perovskites.

  7. Dual nature of 3 d electrons in YbT 2 Zn 20 (T = Co; Fe) evidenced by electron spin resonance

    SciTech Connect (OSTI)

    Ivanshin, V. A.; Litvinova, T. O.; Gimranova, K.; Sukhanov, A. A.; Jia, S.; Bud'ko, S. L.; Canfield, P. C.

    2015-03-18

    The electron spin resonance experiments were carried out in the single crystals YbFe2Zn20. The observed spin dynamics is compared with that in YbCo2Zn20 and Yb2Co12P7 as well as with the data of inelastic neutron scattering and electronic band structure calculations. Our results provide direct evidence that 3d electrons are itinerant in YbFe2Zn20 and localized in YbCo2Zn20. Possible connection between spin paramagnetism of dense heavy fermion systems, quantum criticality effects, and ESR spectra is discussed.

  8. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  9. Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu; Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo

    2014-09-07

    We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

  10. Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition: Preprint

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Christensen, S.; Mann, J.; To, B.; Ramanathan, K.; Noufi, R.; Furtak, T. E.; Levi, D.

    2012-06-01

    Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(InxGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition.

  11. Effects of the built-in electric field on polaron effects in a wurtzite ZnO/Mg{sub x}Zn{sub 1−x}O quantum well

    SciTech Connect (OSTI)

    Zhao, Feng-qi; Guo, Zi-Zheng

    2015-11-21

    The effects of the built-in electric field on the polarons in wurtzite ZnO/Mg{sub x}Zn{sub 1−x}O quantum wells are studied numerically via the improved Lee-Low-Pines intermediate coupling variational method. The contributions of the different branches of the optical phonons to the polaron energies of the ZnO/Mg{sub x}Zn{sub 1−x}O quantum wells are calculated as functions of well width d and composition x. The anisotropy effects of the electronic effective masses, the dielectric constants, and the frequencies of the different branches of the phonon modes (including both the longitudinal-like and transverse-like confined optical phonon modes, the interface optical phonon modes and the half-space phonon modes) on the polaron energies are considered in the calculations. Comparisons between the cases with and without the built-in electric field (F ≠ 0 and F = 0) are made for the optical phonon contributions to the polaron energies for the different branches of the phonon modes. The results show that the built-in electric field has marked effects on the contributions of the phonons with the different modes; in detail, it makes positive contributions to the interface and the half-space phonons, but negative contributions to the confined phonons, and thus its effect on the total phonon contribution is not obvious. Detailed comparisons of the contributions of the symmetric and antisymmetric phonon modes to the polaron energies as functions of d and x are also presented and a heuristic argument is provided to explain the numerical results.

  12. Fine precipitation scenarios of AlZnMg(Cu) alloys revealed by advanced atomic-resolution electron microscopy study Part I: Structure determination of the precipitates in AlZnMg(Cu) alloys

    SciTech Connect (OSTI)

    Liu, J.Z.; Chen, J.H.; Yuan, D.W.; Wu, C.L.; Zhu, J.; Cheng, Z.Y.

    2015-01-15

    Although they are among the most important precipitation-hardened materials for industry applications, the high-strength AlZnMg(Cu) alloys have thus far not yet been understood adequately about their underlying precipitation scenarios in relation with the properties. This is partly due to the fact that the structures of a number of different precipitates involved in electron microscopy in association with quantitative image simulations have to be employed; a systematic study of these hardening precipitates in different alloys is also necessary. In Part I of the present study, it is shown that there are five types of structurally different precipitates including the equilibrium η-phase precipitate. Using two state-of-the-art atomic-resolution imaging techniques in electron microscopy in association with quantitative image simulations, we have determined and clarified all the unknown precipitate structures. It is demonstrated that atomic-resolution imaging can directly suggest approximate structure models, whereas quantitative image analysis can refine the structure details that are much smaller than the resolution of the microscope. This combination is crucially important for solving the difficult structure problems of the strengthening precipitates in AlZnMg(Cu) alloys. - Highlights: Part I: • We determine and verify all the key precipitate structures in AlMgZn(Cu) alloys. • We employ aberration-corrected scanning transmission electron microscopy (STEM). • We use aberration-corrected high-resolution TEM (HRTEM) for the investigations. • We obtain atomic-resolution images of the precipitates and model their structures. • We refine all precipitate structures with quantitative image simulation analysis. Part II: • The hardening precipitates in AlZnMg alloys shall be classified into two groups. • Two precipitation scenarios coexist in the alloys. • The precipitation behavior of such an alloy depends on the alloy's composition. • Very detailed phase

  13. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    SciTech Connect (OSTI)

    Evtodiev, I.; Caraman, I.; Leontie, L.; Rusu, D.-I.; Dafinei, A.; Nedeff, V.; Lazar, G.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  14. Growth and characterization of ZnO{sub 1−x}S{sub x} highly mismatched alloys over the entire composition

    SciTech Connect (OSTI)

    Jaquez, M.; Ting, M.; Yu, K. M.; Hettick, M.; Javey, A.; Sánchez-Royo, J. F.; Wełna, M.; Dubon, O. D.; Walukiewicz, W.

    2015-12-07

    Alloys from ZnO and ZnS have been synthesized by radio-frequency magnetron sputtering over the entire alloying range. The ZnO{sub 1−x}S{sub x} films are crystalline for all compositions. The optical absorption edge of these alloys decreases rapidly with small amount of added sulfur (x ∼ 0.02) and continues to red shift to a minimum of 2.6 eV at x = 0.45. At higher sulfur concentrations (x > 0.45), the absorption edge shows a continuous blue shift. The strong reduction in the band gap for O-rich alloys is the result of the upward shift of the valence-band edge with x as observed by x-ray photoelectron spectroscopy. As a result, the room temperature bandgap of ZnO{sub 1−x}S{sub x} alloys can be tuned from 3.7 eV to 2.6 eV. The observed large bowing in the composition dependence of the energy bandgap arises from the anticrossing interactions between (1) the valence-band of ZnO and the localized sulfur level at 0.30 eV above the ZnO valence-band maximum for O-rich alloys and (2) the conduction-band of ZnS and the localized oxygen level at 0.20 eV below the ZnS conduction band minimum for the S-rich alloys. The ability to tune the bandgap and knowledge of the location of the valence and conduction-band can be advantageous in applications, such as heterojunction solar cells, where band alignment is crucial.

  15. Understanding the Cu-Zn brass alloys using a short-range-order cluster model: Significance of specific compositions of industrial alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hong, H. L.; Wang, Q.; Dong, C.; Liaw, Peter K.

    2014-11-17

    Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn a-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu12]Zn1,6 and [Zn-Cu12](Zn,Cu)6, which explain the a-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent the 1st-neighbor cluster, and eachmore » cluster is matched with one to six 2nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1st- and 2nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. The revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, therefore offering a fundamental and practical method towards composition interpretations of all kinds of alloys.« less

  16. Mn-doped ZnFe{sub 2}O{sub 4} nanoparticles with enhanced performances as anode materials for lithium ion batteries

    SciTech Connect (OSTI)

    Tang, Xiaoqin; Hou, Xianhua; Yao, Lingmin; Hu, Shejun; Liu, Xiang; Xiang, Liangzhong

    2014-09-15

    Highlights: • Mn-doped ZnFe{sub 2}O{sub 4} nanoparticles have been synthesized by hydrothermal method. • Zn{sub 0.96}Mn{sub 0.04}Fe{sub 2}O{sub 4} electrode shows the highest reversible capacity of 1157 mA h g{sup −1}. • The Zn{sub 0.96}Mn{sub 0.04}Fe{sub 2}O{sub 4} electrode shows promising cycling stability. - Abstract: Nanocrystalline Zn{sub 1−x}Mn{sub x}Fe{sub 2}O{sub 4} (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1) have been successfully synthesized by one-step hydrothermal method. The morphologies and electrochemical performance of Mn-doped ZnFe{sub 2}O{sub 4} in various proportions were investigated at room temperature, respectively. The Zn{sub 1−x}Mn{sub x}Fe{sub 2}O{sub 4} (x = 0.04) electrode in the as-synthesized samples showed the highest specific capacity of 1547 mA h g{sup −1} and 1157 mA h g{sup −1} in the initial discharge/charge process, with a coulombic efficiency of 74.8%. Additionally, excellent cycling stability was performed with a 1214 mA h g{sup −1} capacity retention at a current density of 100 mA g{sup −1} after 50 cycles. The corresponding mechanism was proposed which indicated that the Mn-doped ZnFe{sub 2}O{sub 4} nanoparticles experienced an aggregation thermochemical reaction among ZnO, MnO and Fe{sub 2}O{sub 3} subparticles.

  17. Understanding the Cu-Zn brass alloys using a short-range-order cluster model: Significance of specific compositions of industrial alloys

    SciTech Connect (OSTI)

    Hong, H. L.; Wang, Q.; Dong, C.; Liaw, Peter K.

    2014-11-17

    Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn a-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu12]Zn1,6 and [Zn-Cu12](Zn,Cu)6, which explain the a-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent the 1st-neighbor cluster, and each cluster is matched with one to six 2nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1st- and 2nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. The revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, therefore offering a fundamental and practical method towards composition interpretations of all kinds of alloys.

  18. Near-resonant second-order nonlinear susceptibility in c-axis oriented ZnO nanorods

    SciTech Connect (OSTI)

    Liu, Weiwei; Wang, Kai; Long, Hua; Wang, Bing Lu, Peixiang; Chu, Sheng

    2014-08-18

    Near-resonant second-harmonic generation (SHG) in c-axis oriented ZnO nanorods is studied under the femtosecond laser with wavelength from 780?nm to 810?nm. A highly efficient SHG is obtained, which is attributed to the d{sub 131} component of the second-order nonlinear susceptibility. The largest d{sub 131} value is estimated to be 10.2?pm/V at the pumping wavelength of 800?nm, which indicates a large SHG response of the c-axis oriented ZnO nanorods in the near-resonant region. Theoretical calculation based on finite-difference time-domain simulation suggests a four-fold local-field enhancement of the SHG.

  19. Methanol Synthesis over Cu/ZnO/Al2O3: The Active Site in Industrial Catalysis

    SciTech Connect (OSTI)

    Behrens, Malte

    2012-03-28

    Unlike homogeneous catalysts, heterogeneous catalysts that have been optimized through decades are typically so complex and hard to characterize that the nature of the catalytically active site is not known. This is one of the main stumbling blocks in developing rational catalyst design strategies in heterogeneous catalysis. We show here how to identify the crucial atomic structure motif for the industrial Cu/ZnO/Al{sub 2}O{sub 3} methanol synthesis catalyst. Using a combination of experimental evidence from bulk-, surface-sensitive and imaging methods collected on real high-performance catalytic systems in combination with DFT calculations. We show that the active site consists of Cu steps peppered with Zn atoms, all stabilized by a series of well defined bulk defects and surface species that need jointly to be present for the system to work.

  20. Fusion Cross Section in the {sup 4,6}He+{sup 64}Zn Collisions Around the Coulomb Barrier

    SciTech Connect (OSTI)

    Fisichella, M.; Di Pietro, A.; Figuera, P.; Marchetta, C.; Lattuada, M.; Musumarra, A.; Pellegriti, M. G.; Scuderi, V.; Strano, E.; Torresi, D.; Milin, M.; Skukan, N.; Zadro, M.

    2011-10-28

    New fusion data for the {sup 4}He+{sup 64}Zn system at sub-barrier energies are measured to cover the same energy region of previous measurements for {sup 6}He+{sup 64}Zn. Aim of the experiment was to compare the fusion excitation functions for the two system to investigate on the effects of the {sup 6}He neutron-halo structure on the fusion reaction mechanism at energies around the Coulomb barrier. The fusion cross section was measured by using an activation technique. Comparing the two systems, we observe an enhancement of the fusion cross section in the reaction induced by {sup 6}He, at and below the Coulomb barrier.

  1. Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy

    SciTech Connect (OSTI)

    Shimada, Toru; Kamaraju, N.; Frischkorn, Christian; Wolf, Martin; Kampfrath, Tobias

    2014-09-15

    We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80 MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6 THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

  2. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    SciTech Connect (OSTI)

    Lee, J. J.; Xing, G. Z. Yi, J. B.; Li, S.; Chen, T.; Ionescu, M.

    2014-01-06

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  3. Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

    SciTech Connect (OSTI)

    Song, Ning; Liu, Fangyang; Huang, Yidan; Hao, Xiaojing E-mail: xj.hao@unsw.edu.au; Green, Martin A.; Young, Matthew; Erslev, Pete; Harvey, Steven P.; Teeter, Glenn E-mail: xj.hao@unsw.edu.au; Wilson, Samual

    2015-06-22

    To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

  4. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  5. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect (OSTI)

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  6. Study of 57 Fe Mössbauer effect in RFe2Zn20 ( R = Lu, Yb, Gd)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bud’ko, Sergey L.; Kong, Tai; Ma, Xiaoming; Canfield, Paul C.

    2015-08-04

    In this document we report measurements of 57Fe Mössbauer spectra for RFe2Zn20 (R = Lu, Yb, Gd) from ~ 4.5 K to room temperature. The obtained isomer shift values are very similar for all three compounds, their temperature dependence was analyzed within the Debye model and resulted in an estimate of the Debye temperatures of 450-500 K. The values of quadrupole splitting at room temperature change with the cubic lattice constant a in a linear fashion. For GdFe2Zn20, ferromagnetic order is seen as an appearance of a sextet in the spectra. The 57Fe site hyperfine field for T → 0more » was evaluated to be ~ 2.4 T.« less

  7. X-ray absorption spectroscopy of Mn doped ZnO thin films prepared by rf sputtering technique

    SciTech Connect (OSTI)

    Yadav, Ashok Kumar; Jha, S. N.; Bhattacharyya, D.; Haque, Sk Maidul; Shukla, Dinesh; Choudhary, Ram Janay

    2015-11-15

    A set of r.f. sputter deposited ZnO thin films prepared with different Mn doping concentrations have been characterised by Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Absorption Near Edge Spectroscopy (XANES) measurements at Zn, Mn and O K edges and at Mn L{sub 2,3} edges apart from long range structural characterisation by Grazing Incident X-ray Diffraction (GIXRD) technique. Magnetic measurements show room temperature ferromagnetism in samples with lower Mn doping which is however, gets destroyed at higher Mn doping concentration. The results of the magnetic measurements have been explained using the local structure information obtained from EXAFS and XANES measurements.

  8. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect (OSTI)

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  9. Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature

    SciTech Connect (OSTI)

    Singh, Anil; Chaudhary, Sujeet; Pandya, D. K.

    2013-04-29

    The room temperature deposited ZnO:H thin films having high conductivity of 500 Ohm-Sign {sup -1} cm{sup -1} and carrier concentration reaching 1.23 Multiplication-Sign 10{sup 20} cm{sup -3} were reactively sputter deposited on glass substrates in the presence of O{sub 2} and 5% H{sub 2} in Ar. A metal-semiconductor transition at 165 K is induced by the increasing hydrogen incorporation in the films. Hydrogen forms shallow donor complex with activation energy of {approx}10-20 meV at oxygen vacancies (V{sub O}) leading to increase in carrier concentration. Hydrogen also passivates V{sub O} and V{sub Zn} causing {approx}4 times enhancement of mobility to 25.4 cm{sup 2}/V s. These films have potential for use in transparent flexible electronics.

  10. Structural and magnetic properties of triethylene glycol stabilized Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} nanoparticles

    SciTech Connect (OSTI)

    Sozeri, H.; Durmus, Z.; Baykal, A.

    2012-09-15

    Highlights: ? Monodispersed TREG stabilized Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} NP's were prepared via hydrothermal method. ? Zn{sub x0.6}Co{sub 0.4}Fe{sub 2}O{sub 4} NP's has superparamagnetic behavior like absence of saturation at high fields. ? The lattice parameter (a{sub o}) increases linearly with the addition of Zn and follows Vegard's law. -- Abstract: Zn substituted cobalt ferrite nanoparticles having formula of Zn{sub x}Co{sub 1?x}Fe{sub 2}O{sub 4} (x = 0.01.0) were prepared by hydrothermal technique. In this process, triethylene glycol was used as a solvent and surfactant, anhydrous sodium hydroxide was used as an alkalinity additive. Investigation of the structural, morphological and thermal properties were carried out using X-ray diffraction (XRD), infrared spectroscopy (FT-IR), transmission electron spectroscopy (TEM) and thermal analysis (TGA) respectively. The X-ray diffraction study reveals that the lattice constant of cobalt ferrite increases with the increase of Zn content. Magnetization measurements showed that as zinc concentration increases saturation magnetization initially stays constant and then decreases monotically. Samples having high zinc concentration (x ? 0.6) have superparamagnetic behavior like absence of saturation at high fields, low saturation magnetization values and immeasurable coercivity. These features were explained by surface spin disorder and canted spins.

  11. SPECTROSCOPIC STUDIES OF EXTREMELY METAL-POOR STARS WITH THE SUBARU HIGH DISPERSION SPECTROGRAPH. V. THE Zn-ENHANCED METAL-POOR STAR BS 16920-017

    SciTech Connect (OSTI)

    Honda, Satoshi; Aoki, Wako; Beers, Timothy C.; Takada-Hidai, Masahide E-mail: aoki.wako@nao.ac.jp E-mail: hidai@apus.rh.u-tokai.ac.jp

    2011-04-01

    We report Zn abundances for 18 very metal-poor stars studied in our previous work, covering the metallicity range -3.2< [Fe/H] <-2.5. The [Zn/Fe] values of most stars show an increasing trend with decreasing [Fe/H] in this metallicity range, confirming the results found by previous studies. However, the extremely metal-poor star BS 16920-017([Fe/H] =-3.2) exhibits a significantly high [Zn/Fe] ratio ([Zn/Fe] = +1.0). Comparison of the chemical abundances of this object with HD 4306, which has similar atmospheric parameters to BS 16920-017, clearly demonstrates a deficiency of {alpha} elements and neutron-capture elements in this star, along with enhancements of Mn and Ni, as well as Zn. The association with a hypernova explosion that has been proposed to explain the high Zn abundance ratios found in extremely metal-poor stars is a possible explanation, although further studies are required to fully interpret the abundance pattern of this object.

  12. Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition

    SciTech Connect (OSTI)

    Chen, Y. N.; Xu, S. J. Zheng, C. C.; Ning, J. Q.; Ling, F. C. C.; Anwand, W.; Brauer, G.; Skorupa, W.

    2014-07-28

    By implanting Zn{sup +} ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zn{sub i}) and O vacancies (V{sub O}) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low “kick out” thermal energy and small thermal quenching energy. A “self-activated” optical transition between a shallow donor and the defect center of Zn{sub i}-V{sub O} complex or V{sub Zn}V{sub O} di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

  13. Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells

    SciTech Connect (OSTI)

    Cheun, H.; Fuentes-Hernandez, C.; Shim, J.; Fang, Y.; Cai, Y.; Li, H.; Sigdel, A. K.; Meyer, J.; Maibach, J.; Dindar, A.; Zhou, Y.; Berry, J. J.; Bredas, J. L.; Kahn, A.; Sandhage, K. H.; Kippelen, B.

    2012-04-10

    Atomic layer deposition is used to synthesize Al{sub 2}O{sub 3}:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron-selective electrodes in polymer-based inverted solar cells. Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 x 10{sup 3} S cm{sup 01}; more than six times higher than for neat ZnO films), while retaining a high optical transmittance ({>=}80% in the visible region) and a low work function (4.0 eV). Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al{sub 2}O{sub 3}:ZnO film composition. Polymer-based inverted solar cells using poly(3-hexylthiophene) (P3HT):phenyl-C{sub 61}-butyric acid methyl ester (PCBM) mixtures in the active layer and Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates as transparent electron-selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm{sup -2} illumination.

  14. Synthesis and X-ray diffraction study of Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} solid solutions

    SciTech Connect (OSTI)

    Sheleg, A. U. Hurtavy, V. G.; Chumak, V. A.

    2015-09-15

    Quaternary compounds Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} and solid solutions on their basis have been fabricated by one-temperature synthesis from elementary components: Cu, Zn, Sn, S, and Se. Single crystals of these compounds have been grown by the method of chemical gas-transport reactions from polycrystalline samples. The compositional dependence of the unit-cell parameters of Cu{sub 2}ZnSn(S{sub x}Se{sub 1–x}){sub 4} has been investigated by X-ray diffraction. It is found that parameters a and c linearly decrease with an increase in sulfur concentration in accordance with Vegard’s law. The temperature dependences of parameters a and thermalexpansion coefficients α{sub a} of Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} single crystals in the range of 100–300 K are determined.

  15. ß-delayed γ-proton decay in ⁵⁶Zn: Analysis of the charged-particle spectrum

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Orrigo, S. E.A.; Rubio, B.; Fujita, Y.; Blank, B.; Gelletly, W.; Agramunt, J.; Algora, A.; Ascher, P.; Bilgier, B.; Cáceres, L.; et al

    2015-01-01

    A study of the β decay of the proton-rich Tz = –2 nucleus ⁵⁶Zn has been reported in a recent publication. A rare and exotic decay mode, β-de-layed γ-proton decay, has been observed there for the first time in the fp shell. Here, we expand on some of the details of the data analysis, focusing on the charged particle spectrum.

  16. Improvement of the photoluminescent intensity of ZnTa{sub 2}O{sub 6}:Pr{sup 3+} phosphor

    SciTech Connect (OSTI)

    Noto, L.L. Ntwaeaborwa, O.M.; Yagoub, M.Y.A.; Swart, H.C.

    2014-07-01

    Highlights: The optimal luminescence intensity was obtained for 0.4 mol% Pr{sup 3+} doped ZnTa{sub 2}O{sub 6}. The ZnTa{sub 2}O{sub 6}:Pr{sup 3+} has a colour index matching an ideal red emission. The cross relaxation process led to a decrease in red emission at higher Pr{sup 3+} concentrations. The blue emission continues to increase at higher Pr{sup 3+} concentrations. The persistent luminescent increases with an increase in Pr{sup 3+} concentration. - Abstract: A red emitting ZnTa{sub 2}O{sub 6}:Pr{sup 3+} phosphor with Commission Internationale de lEclairage coordinates that match those of an ideal red emission was prepared by solid state chemical reaction. X-ray diffraction confirmed that a pure orthorhombic phase of ZnTa{sub 2}O{sub 6} was crystallized. A homogeneous distribution of the Pr{sup 3+} ions was confirmed from the analysis of the time of flight secondary ion mass spectroscopy overlay images. In addition to the reflectance at 259 nm associated with band-to-band absorption, minor reflectance peaks associated with f-f transitions of Pr{sup 3+} were observed at 420500 nm. The main red emission peak was split into minor peaks located at 608, 619 and 639 nm that were assigned to {sup 1}D{sub 2} ? {sup 3}H{sub 4}, {sup 3}P{sub 0} ? {sup 3}H{sub 6} and {sup 3}P{sub 0} ? {sup 3}F{sub 2} transitions of Pr{sup 3+}, respectively. With increasing concentration of Pr{sup 3+}, a relatively weak blue emission was observed at 488 nm and this phenomenon maybe attributed to virtual charge transfer or/and inter cross relaxation effects. The decay characteristics of the persistent emission were also calculated.

  17. Mechanochemical synthesis of tungsten carbide nano particles by using WO{sub 3}/Zn/C powder mixture

    SciTech Connect (OSTI)

    Hoseinpur, Arman; Vahdati Khaki, Jalil; Marashi, Maryam Sadat

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Nano particles of WC are synthesized by mechanochemical process. ► Zn was used to reduce WO{sub 3}. ► By removing ZnO from the milling products with an acid leaching, WC will be the final products. ► XRD results showed that the reduction reactions were completed after 36 h. ► TEM and SEM images showed that the morphology of produced powder is nearly spherical like. -- Abstract: In this research we introduce a new, facile, and economical system for fabrication of tungsten carbide (WC) nano particle powder. In this system WO{sub 3}, Zn, and C have been ball-milled for several hours, which led to the synthesis of tungsten carbide nano particles. The synthesized WC can successfully be separated from the ball-milled product by subjecting the product powder to diluted HCl for removing ZnO and obtaining WC. X-ray diffraction (XRD) analysis indicates that the reduction of WO{sub 3} will be completed gradually by increasing milling time up to 36 h. Scanning electron microscope (SEM), and transmission electron microscope (TEM) images show that after 36 h of milling the particle size of the fabricated powder is nano metric (about 20 nm). Results have shown that this system can surmount some main problems occurred in previous similar WC synthesizing systems. For example carbothermic reduction reactions, which lead to the synthesis of W{sub 2}C instead of WC, would not be activated because in this system reactions take place gradually.

  18. Visible-light photoconductivity of Zn1-xCoxO and its dependence on Co2+ concentration

    SciTech Connect (OSTI)

    Johnson, Claire A.; Cohn, Alicia; Kaspar, Tiffany C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2011-09-06

    Many metal oxides investigated for solar photocatalysis or photoelectrochemistry have band gaps that are too wide to absorb a sufficient portion of the solar spectrum. Doping with impurity ions has been extensively explored as a strategy to sensitize such oxides to visible light, but the electronic structures of the resulting materials are frequently complex and poorly understood. Here, we report a detailed photoconductivity investigation of the wide-gap II-VI semiconductor ZnO doped with Co2+ (Zn1-xCoxO), which responds to visible light in photoelectrochemical and photoconductivity experiments and thus represents a well-defined model system for understanding dopant-sensitized oxides. Variable-temperature scanning photoconductivity measurements have been performed on high-structural-quality Zn1-xCoxO epitaxial films to examine the relationship between dopant concentration (x) and visible-light photoconductivity, with particular focus on mid-gap d-d photoactivity. Excitation into the intense 4T1(P) d-d band at ~2.0 eV (620 nm) leads to Co2+/3+ ionization with a quantum efficiency that increases with decreasing cobalt concentration and increasing sample temperature. Both spontaneous and thermally assisted ionization from the Co2+ d-d excited state are found to become less effective as x is increased, attributed to an increasing conduction-band-edge potential. These trends counter the increasing light absorption with increasing x, explaining the experimental maximum in external photon-to-current conversion efficiencies at values well below the solid solubility of Co2+ in ZnO.

  19. Luminescence and electrical properties of solution-processed ZnO thin films by adding fluorides and annealing atmosphere

    SciTech Connect (OSTI)

    Choi, Sungho; Park, Byung-Yoon; Jung, Ha-Kyun

    2011-06-15

    Highlights: {yields} Systematic study of the fluorides doped solution-processed ZnO thin films via the luminescence and electrical behaviors. {yields} Defect-related visible emission bands are affected by annealing ambient and fluoride addition. {yields} Adding lithium fluoride followed by annealing in oxygen ambient leads to a controlled defect density with proper TFT performance. -- Abstract: To develop an efficient channel layer for thin film transistors (TFTs), understanding the defect-related luminescence and electrical property is crucial for solution-processed ZnO thin films. Film growth with the fluorides addition, especially using LiF, followed by the oxygen ambient post-annealing leads to decreased defect-related emission as well as enhanced switching property. The saturation mobility and current on/off ratio are 0.31 cm{sup 2} V{sup -1} s{sup -1} and 1.04 x 10{sup 3}. Consequently, we can visualize an optimized process condition and characterization method for solution-processed TFT based on the fluorine-doped ZnO film channel layer by considering the overall emission behavior.

  20. ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint

    SciTech Connect (OSTI)

    Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R.; Coutts,T. J.

    2008-05-01

    Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.

  1. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang; Yang, Xiaoxia; Liu, Mingju; Tao, Zhi; Wei, Lei Li, Chi Zhang, Xiaobing; Wang, Baoping; Dai, Qing; Nathan, Arokia

    2014-03-17

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  2. Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

    SciTech Connect (OSTI)

    Myers, M. A.; Jian, J.; Khranovskyy, V.; Lee, J. H.; Wang, Han; Wang, Haiyan E-mail: hwang00@tamu.edu

    2015-08-14

    Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

  3. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H

    SciTech Connect (OSTI)

    Look, David; Droubay, Timothy C.; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

    2011-01-11

    Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

  4. Synthesis and Optical Properties of Thiol Functionalized CdSe/ZnS (Core/Shell) Quantum Dots by Ligand Exchange

    SciTech Connect (OSTI)

    Zhu, Huaping; Hu, Michael Z.; Shao, Lei; Yu, Kui; Dabestani, Reza T; Zaman, Md. Badruz; Liao, Dr. Shijun

    2014-03-20

    The colloidal photoluminescent quantum dots (QDs) of CdSe (core) and CdSe/ZnS (core/shell) were synthesized at different temperatures with different growth periods. The optical properties (i.e., UV/Vis spectra and photoluminescent emission spectra) of the resulting QDs were investigated. The CdSe/ZnS QDs exhibited higher photoluminescent (PL) efficiency and stability than their corresponding CdSe core QDs. Ligand exchange with various thiol molecules was performed to replace the initial surface passivation ligands, that is, trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP), and the optical properties of the surface-modified QDs were studied. The thiol ligand molecules used included 1,4-benzenedimethanethiol, 1,16-hexadecanedithiol, 1,11-undecanedithiol, 11-mercapto-1-undecanol, and 1,8 octanedithiol. After the thiol functionalization, the CdSe/ZnS QDs exhibited significantly enhanced PL efficiency and storage stability. Besides surface passivation effect, such enhanced performance of thiol-functionalized QDs could be due to self-assembly formation of dimer/trimer clusters, in which QDs are linked by dithiol molecules. Effects of ligand concentration, type of ligand, and heating on the thiol stabilization of QDs were also discussed.

  5. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    SciTech Connect (OSTI)

    Hu, Yu-Min Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  6. Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    SciTech Connect (OSTI)

    Baruah, Sunandan; Dutta, Joydeep; Sinha, Sudarson Sekhar; Ghosh, Barnali; Pal, Samir Kumar; Raychaudhuri, A. K.

    2009-04-01

    Wide band gap metal oxide semiconductors such as zinc oxide (ZnO) show visible band photolysis that has been employed, among others, to degrade harmful organic contaminants into harmless mineral acids. Metal oxides show enhanced photocatalytic activity with the increase in electronic defects in the crystallites. By introducing defects into the crystal lattice of ZnO nanoparticles, we observe a redshift in the optical absorption shifting from the ultraviolet region to the visible region (400-700 nm), which is due to the creation of intermediate defect states that inhibit the electron hole recombination process. The defects were introduced by fast nucleation and growth of the nanoparticles by rapid heating using microwave irradiation and subsequent quenching during the precipitation reaction. To elucidate the nature of the photodegradation process, picosecond resolved time correlated single photon count (TCSPC) spectroscopy was carried out to record the electronic transitions resulting from the de-excitation of the electrons to their stable states. Photodegradation and TCSPC studies showed that defect engineered ZnO nanoparticles obtained through fast crystallization during growth lead to a faster initial degradation rate of methylene blue as compared to the conventionally synthesized nanoparticles.

  7. Structural, optical, and magnetic properties of (Co, Cu)-codoped ZnO films with different Co concentrations

    SciTech Connect (OSTI)

    Xu, M. Yuan, H. Zhou, P. F.; Dong, C. J.; You, B.; Duan, M. Y.

    2014-03-07

    Zn{sub 0.99-x}Co{sub x}Cu{sub 0.01}O films with different Co concentrations from 0% to 20% were fabricated by a sol-gel method. Moderate Co doping is found to improve the surface uniformity and crystal quality of the films, and causes a redshift of the band edge of Zn(Co,Cu) films. X-ray photoelectron spectroscopy reveals that the introduction of Co ions causes the valence state of Cu to change from +2 to +1; while at Co concentrations lower than 10%, the Co exists in the +2 valence state. Strong blue emission at ∼420 and 440 nm are observed, decreasing with increasing Co concentration, but becoming strong again as the concentration is increased to 20%. Enhanced room-temperature ferromagnetism is observed for the (Co, Cu)-codoped ZnO films at Co concentrations lower than 10%. These interesting magnetic properties are explained based on charge transfer, together with the defect-related model for ferromagnetism.

  8. Investigation of defects in InGaZn oxide thin film using electron spin resonance signals

    SciTech Connect (OSTI)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

    2014-04-28

    InGaZn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g?=?2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g?=?1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  9. Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

    SciTech Connect (OSTI)

    Kurtz, A.; Hierro, A. Muoz, E.

    2014-02-24

    A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V}?+?0.47?eV, E{sub V}?+?0.35?eV, and E{sub V}?+?0.16?eV are observed in all films with concentrations in the range of 10{sup 15}10{sup 18}?cm{sup ?3}. The two shallowest traps at E{sub V}?+?0.35?eV and E{sub V}?+?0.16?eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.

  10. Zirconium doped nano-dispersed oxides of Fe, Al and Zn for destruction of warfare agents

    SciTech Connect (OSTI)

    Stengl, Vaclav; Houskova, Vendula; Bakardjieva, Snejana; Murafa, Nataliya; Marikova, Monika; Oplustil, Frantisek; Nemec, Tomas

    2010-11-15

    Zirconium doped nano dispersive oxides of Fe, Al and Zn were prepared by a homogeneous hydrolysis of the respective sulfate salts with urea in aqueous solutions. Synthesized metal oxide hydroxides were characterized using Brunauer-Emmett-Teller (BET) surface area and Barrett-Joiner-Halenda porosity (BJH), X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX). These oxides were taken for an experimental evaluation of their reactivity with sulfur mustard (HD or bis(2-chloroethyl)sulfide), soman (GD or (3,3'-Dimethylbutan-2-yl)-methylphosphonofluoridate) and VX agent (S-[2-(diisopropylamino)ethyl]-O-ethyl-methylphosphonothionate). The presence of Zr{sup 4+} dopant can increase both the surface area and the surface hydroxylation of the resulting doped oxides, decreases their crystallites' sizes thereby it may contribute in enabling the substrate adsorption at the oxide surface thus it can accelerate the rate of degradation of warfare agents. Addition of Zr{sup 4+} converts the product of the reaction of ferric sulphate with urea from ferrihydrite to goethite. We found out that doped oxo-hydroxides Zr-FeO(OH) - being prepared by a homogeneous hydrolysis of ferric and zirconium oxo-sulfates mixture in aqueous solutions - exhibit a comparatively higher degradation activity towards chemical warfare agents (CWAs). Degradation of soman or VX agent on Zr-doped FeO(OH) containing ca. 8.3 wt.% of zirconium proceeded to completion within 30 min.

  11. High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

    SciTech Connect (OSTI)

    Mendelsberg, Rueben J.; Lim, S.H.N.; Milliron, D.J.; Anders, Andre

    2010-11-18

    High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.

  12. Tuning complexity by lithiation: A family of intergrowth structures using condensed hypho-icosahedra in the Li-doped Ca–Zn system

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Qisheng; Zhu, Ran; Miller, Gordon J.

    2016-04-26

    Cluster chemistry of intermetallics with valence electron counts (VECs) in the range of 2.0–3.0 is intriguing. Lithiation of polar intermetallics in this VEC region is found to be an effective chemical route to produce new complex structures with different stability mechanisms. In this work, two new complex intermetallic structures have been discovered in the Ca–Li–Zn system: Ca12LixZn59–x and Ca15LixZn75–x. Ca12LixZn59–x, x ≈ 5.65(3)–14.95(3), forms in the trigonal space group R3m, with a = 9.074(1)–9.1699(2) Å, c = 53.353(1)–53.602(1) Å, and Z = 3. In comparison, Ca15LixZn75–x, x ≈ 19.07(2), crystallizes in the space group P63/mmc, with a ≈ 9.183(1) Å,more » c ≈ 45.191(5) Å), and Z = 2. Both structures are members of a large intergrowth family featuring slabs of dimers (D) and trimers (T) stacking along [001], with the sequences DTDDTDDTD for Ca12LixZn59–x and TDDDTDDD for Ca15LixZn75–x. Each dimer consists of two face-sharing Zn-centered hypho-icosahedra, and each trimer comprises a Li-centered icosahedron sandwiched by two hypho-icosahedra. Furthermore, this intergrowth family includes several known intermetallic structure types involving very electropositive metals, e.g., SrMg5.2, Ba2Li4.21Al4.79, and Sr9Li17.5Al25.5. Because of cluster defects and condensation, both Ca12LixZn59–x and Ca15LixZn75–x are electronically akin to close-packed metals, and their structural stabilities can be interpreted by a Hume-Rothery mechanism rather than the Zintl–Klemm concept.« less

  13. Sulfur L{sub 2,3} soft-x-ray fluorescence of CdS and ZnS

    SciTech Connect (OSTI)

    Zhou, L.; Callcott, T.A.; Jia, J.J.

    1997-04-01

    The II-VI sulfur compounds CdS and ZnS have important electro-optics applications. In addition, they have well characterized and relatively simple structures so that they are good candidates for theoretical model development in solid-state physics. Some experimental results on density of states have been reported, mostly determined from photoemission measurements, and theoretical calculations are available for both materials. Nevertheless the electronic properties of these elements are still not completely understood. It has been established that the d-bands, derived from Cd or Zn, lie in a subband gap between a lower valence band (LVB) derived from the S 3s orbital and an upper valence band (UVB) derived from the 3p states of S and the 4(3)s states of Cd(Zn). The locations of these bands within the gap disagree with the best available calculations, however. The principal problem is that experimental photoemission measurements locate the d-bands about 2 eV lower in the band gap than the best available calculations. Some authors argue that the hole in the d-band in the final state of the photoemission process increases the binding of the d-electrons. In any case, band gaps, band widths and the precise location of d-bands are important parameters for comparing experiment and theory, and no current calculations give good agreement with all of these parameters. Moreover, photoemission data does not adequately define all of these experimental parameters, because the d-state photoemission dominates that from s and p states and sample charging effects can modify the energy of emitted electrons. The authors report photon excited soft x-ray fluorescence (SXF) S L{sub 2,3} spectra from CdS and ZnS. Using excitation between the L{sub 2} and L{sub 3} thresholds, the L{sub 2} spectrum is suppressed, which permits the authors to accurately determine features of the UVB and LVB as well as the placement of the Cd(Zn) d-bands between the UVB and LVB.

  14. Solvothermal synthesis of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor in water/diethylene glycol system

    SciTech Connect (OSTI)

    Takeshita, Satoru; Honda, Joji; Isobe, Tetsuhiko; Sawayama, Tomohiro; Niikura, Seiji

    2012-05-15

    The influence of aging of the suspension containing the amorphous precusors on structural, compositional and photoluminescent properties is studied to understand the mechanism on the formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles during the solvothermal reaction in the water/diethylene glycol mixed solvent. Aging at 200 Degree-Sign C for 20 min forms the crystalline Zn{sub 2}GeO{sub 4} nanorods and then they grow up to {approx} 50 nm in mean length after aging for 240 min. Their interplanar spacing of (410) increases with increasing the aging time. The photoluminescence intensity corresponding to the d-d transition of Mn{sup 2+} increases with increasing the aging time up to 120 min, and then decreases after aging for 240 min. The photoluminescence lifetime decreases with increasing the aging time, indicating the locally concentrated Mn{sup 2+} ions. These results reveal that Mn{sup 2+} ions gradually replace Zn{sup 2+} ions near surface through repeating dissolusion and precipitation processes during prolonged aging after the complete crystallization of Zn{sub 2}GeO{sub 4}. - Graphical abstract: TEM images of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles aged at 200 Degree-Sign C for different aging times in the mixed solvent of water and diethylene glycol. Highlights: Black-Right-Pointing-Pointer Mechanism on formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor under solvothermal condition. Black-Right-Pointing-Pointer Zn{sub 2}GeO{sub 4} nanorods crystallize via amorphous precursors. Black-Right-Pointing-Pointer Gradual substitution of Mn{sup 2+} during prolonged aging. Black-Right-Pointing-Pointer Such an inhomogeneous Mn{sup 2+} doping process results in concentration quenching.

  15. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect (OSTI)

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  16. Self-assembled ZnGa{sub 2}O{sub 4}–RGO nanocomposites and their enhanced adsorption and photocatalytic performance in water treatment

    SciTech Connect (OSTI)

    Huang, K.; Zhao, X.S.; Li, Y.F.; Xu, X.; Liang, C.; Fan, D.Y.; Yang, H.J.; Zhang, R.; Wang, Y.G.; Lei, M.

    2014-12-15

    Highlights: • ZnGa{sub 2}O{sub 4}–RGO nanocomposites by a self-assembly approach under facile solvothermal condition. • ZnGa{sub 2}O{sub 4} NPs have a well-controlled size and uniform distribution. • The water treatment process is formed by two successive parts: adsorption and photocatalytic degradation. • The content of RGO sheets is crucial for optimizing the photocatalytic activity with a key value of 5%. - Abstract: ZnGa{sub 2}O{sub 4} nanoparticles (NPs) have been successfully anchored onto reduced graphene oxide (RGO) nanosheets by a self-assembly approach under facile solvothermal condition. The as-synthesized ZnGa{sub 2}O{sub 4}–RGO nanocomposites were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). The results reveal that ZnGa{sub 2}O{sub 4} NPs with a well-controlled size and uniform distribution were successfully assembled onto RGO sheets. Moreover, both methylene blue (MB) and rhodamine B (RhB) were employed as model pollutants to evaluate the ability of as-prepared ZnGa{sub 2}O{sub 4}–RGO nanocomposites for wastewater treatment. The content of RGO sheets was found to be crucial for optimizing the photocatalytic activity of various nanocomposites with a key value of 5% beyond which the adsorption ability of ZnGa{sub 2}O{sub 4}–RGO nanocomposites for dyes dominates the process of water treatment.

  17. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  18. X-ray diffraction and Raman scattering study of Cr-doped ZnFe{sub 2}O{sub 4} spinel ferrites

    SciTech Connect (OSTI)

    Kumar, Ashwini; Sharma, Poorva; Varshney, Dinesh

    2015-06-24

    XRD and Raman scattering measurements were made on polycrystalline ZnFe{sub 2-x}Cr{sub x}O{sub 4} (x=0.0, 0.1, 0.2) spinel ferrites as prepared by solid-state reaction route. Rietveld refined X-ray diffraction pattern confirmed the formation of single-phase and are indexed in cubic structure with Fd3m space group. Slight reduction in the lattice parameter from 8.435 to 8.410 Ǻ, with Cr{sup 3+} ion substitution has been observed. From Raman scattering spectra, the modes of ZnFe{sub 1.9}Cr{sub 0.1}O{sub 4} and ZnFe{sub 1.8}Cr{sub 0.2}O{sub 4} are shifted towards the lower frequency side as compared to ZnFe{sub 2}O{sub 4}, this red shift is attributed to higher atomic mass of Zn (65.39 amu) as compared to Fe (55.84 amu)

  19. Assessment of retrogression and re-aging treatment on microstructural and mechanical properties of Al-Zn-Mg-Cu P/M alloy

    SciTech Connect (OSTI)

    Naeem, Haider T.; Mohammad, Kahtan S.; Hussin, Kamarudin; Tan, T. Qing; Idris, M. Sobri

    2015-05-15

    In order to understand the importance of the retrogression and re-aging as a heat treatment for improving microstructural and mechanical properties of the Al-Zn-Mg-Cu powder metallurgy alloys, Al-Zn-Mg-Cu-Fe-Cr alloys were fabricated from the elemental powders. Green compacts are compressed under compaction pressure about 370 MPa. The sintering process carried out for the samples of aluminum alloys at temperature was 650°C under argon atmosphere for two hours. The sintered compacts were subjected into homogenizing condition at 470°C for 1.5 hours and then aged at 120°C for 24 hours (T6 temper) after that it carried out the retrogressed at 180°C for 30 min., and then re-aged at 120°C for 24 hours (RRA). Observations microstructures were examined using optical, scanning electron microscopy coupled with energy dispersive spectroscopy and X-ray diffraction. Density and porosity content was conducted for the samples of alloys. The result showing that the highest Vickers hardness exhibited for an Al-Zn-Mg-Cu alloy after underwent the retrogression and reaging treatment. Increasing in hardness was because of the precipitation hardening through precipitate the (Mg Zn) and (Mg{sub 2}Zn{sub 11}) phases during matrix of aluminum-alloy.

  20. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect (OSTI)

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  1. Highly efficient photocatalysis of p-type Cu{sub 2}ZnSnS{sub 4} under visible-light illumination

    SciTech Connect (OSTI)

    Hou, Xian; Li, Yan Yan, Jian-Jun; Wang, Cheng-Wei

    2014-12-15

    Highlights: Kesterite CZTS nanocrystal powder was synthesized by one-pot method. First successful use CZTS nanocrystal powder as photocatalyst. CZTS shows an efficient photocatalysis under visible light irradiation. CZTS photocatalyst having excellent stability. - Abstract: Cu{sub 2}ZnSnS{sub 4}, as a very promising p-type semiconductor material, has been extensively used in the study of solar cells owing to its suitable band gap (1.11.5 eV), large absorption coefficient of 10{sup 4} cm{sup ?1} in the visible spectrum, good photo stability, nontoxicity and relative abundance of the component elements. In this paper, we have successfully synthesized p-type kesterite Cu{sub 2}ZnSnS{sub 4} nanocrystal powder by facile one-pot method, and made our first successful attempt to use Cu{sub 2}ZnSnS{sub 4} nanocrystal powder as a photocatalyst to degradation methyl orange under visible-light irradiation. The exciting results show that in the visible light region, Cu{sub 2}ZnSnS{sub 4} nanocrystal powder possesses an excellent photocatalytic performance of K = 0.0317 min{sup ?1}, nearly about 6 times of well known commercial P25 titania powder performance under the same conditions, which suggests that the p-type kesterite Cu{sub 2}ZnSnS{sub 4} nanocrystal would be a promising candidate of photocatalyst.

  2. Preparation of magnetic photocatalyst nanoparticlesTiO{sub 2}/SiO{sub 2}/MnZn ferriteand its photocatalytic activity influenced by silica interlayer

    SciTech Connect (OSTI)

    Laohhasurayotin, Kritapas; Pookboonmee, Sudarat; Viboonratanasri, Duangkamon; Kangwansupamonkon, Wiyong

    2012-06-15

    Highlights: ? TiO{sub 2}/SiO{sub 2}/MnZn ferrite acts as magnetic photocatalyst nanoparticle. ? SiO{sub 2} interlayer is used to prevent electron migration between photocatalyst and magnetic core. ? TiO{sub 2}/MnZn ferrite without SiO{sub 2} interlayer shows poor magnetic and photocatalytic property. -- Abstract: A magnetic photocatalyst, TiO{sub 2}/SiO{sub 2}/MnZn ferrite, was prepared by stepwise synthesis involving the co-precipitation of MnZn ferrite as a magnetic core, followed by a coating of silica as the interlayer, and titania as the top layer. The particle size and distribution of magnetic nanoparticles were found to depend on the addition rate of reagent and dispersing rate of reaction. The X-ray diffractometer and transmission electron microscope were used to examine the crystal structures and the morphologies of the prepared composites. Vibrating sample magnetometer was also used to reveal their superparamagnetic property. The UVVis spectrophotometer was employed to monitor the decomposition of methylene blue in the photocatalytic efficient study. It was found that at least a minimum thickness of the silica interlayer around 20 nm was necessary for the inhibition of electron transference initiated by TiO{sub 2} and MnZn ferrite.

  3. Co-sensitization of ZnO by CdS quantum dots in natural dye-sensitized solar cells with polymeric electrolytes to improve the cell stability

    SciTech Connect (OSTI)

    Junhom, W.; Magaraphan, R.

    2015-05-22

    The CdS quantum dots (QDs) were deposited on ZnO layer by chemical bath deposition method to absorb light in the shorter wavelength region and used as photoanode in the dye sensitized solar cell (DSSCs) with natural dye extracted from Noni leaves. Microstructures of CdS-ZnO from various dipping time were characterized by XRD, FE-SEM and EDX. The results showed that the CdS is hexagonal structure and the amount of CdS increases when the dipping time increases. The maximal conversion efficiency of 0.292% was achieved by the DSSCs based on CdS QDs-sensitized ZnO film obtained from 9 min-dipping time. Furthermore, the stability of DSSCs was improved by using polymeric electrolyte. Poly (acrylic acid) (PAA) and Polyacrylamide (PAM) were introduced to CdS QDs-sensitized ZnO film from 9 min-dipping time. Each polymeric electrolyte was prepared by swelling from 0.1-2.0 %w in H2O. The maximal conversion efficiency of 0.207% was achieved for DSSCs based on CdS QDs-sensitized ZnO film with PAM 1.0% and the conversion efficiency was decreased 25% when it was left for1 hr.

  4. Temperature dependent dielectric and conductivity studies of polyvinyl alcohol-ZnO nanocomposite films by impedance spectroscopy

    SciTech Connect (OSTI)

    Hemalatha, K. S.; Damle, R.; Rukmani, K.; Sriprakash, G.; Ambika Prasad, M. V. N.

    2015-10-21

    Dielectric and conductivity behaviors of nano ZnO doped polyvinyl alcohol (PVA) composites for various concentrations of dopant were investigated using impedance spectroscopy for a wide range of temperatures (303 K–423 K) and frequencies (5 Hz–30 MHZ). The dielectric properties of host polymer matrix have been improved by the addition of nano ZnO and are found to be highly temperature dependent. Anomalous dielectric behavior was observed in the frequency range of 2.5 MHz–5 MHz. Increase in dielectric permittivity and dielectric loss was observed with respect to temperature. The Cole-Cole plot could be modeled by low resistance regions in a high resistance matrix and the lowest resistance was observed for the 10 mol. % films. The imaginary part of the electric modulus showed asymmetric peaks with the relaxation following Debye nature below and non-Debye nature above the peaks. The ac conductivity is found to obey Jonscher's power law, whereas the variation of dc conductivity with temperature was found to follow Arrhenius behavior. Two different activation energy values were obtained from Arrhenius plot indicating that two conduction mechanisms are involved in the composite films. Fitting the ac conductivity data to Jonscher's law indicates that large polaron assisted tunneling is the most likely conduction mechanism in the composites. Maximum conductivity is observed at 423 K for all the samples and it is optimum for 10 mol. % ZnO doped PVA composite film. Significant increase in dc and ac conductivities in these composite films makes them a potential candidate for application in electronic devices.

  5. Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Abdel-Basset, D.M.; Yakuphanoglu, F.

    2014-01-01

    Graphical abstract: - Highlights: XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. CV, GV and R{sub s}V of the diode characteristics have been analyzed for the first time. Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. The interfaces states were determined using conductancevoltage technique. ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitancevoltage (CV) and conductancevoltage (GV) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (??), dielectric loss (??), loss tangent (tan ?) and the AC conductivity (?{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{sub s} have a significant effect on the electrical characteristics of the studied diode.

  6. Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zuo Zheng; Morshed, Muhammad; Liu Jianlin; Beyermann, W. P.; Zheng Jianguo; Xin Yan

    2013-03-15

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

  7. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect (OSTI)

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  8. Comprehensive {gamma}-ray spectroscopy of rotational bands in the N=Z+1 nucleus {sup 61}Zn

    SciTech Connect (OSTI)

    Andersson, L.-L.; Rudolph, D.; Johansson, E. K.; Andreoiu, C.; Ekman, J.; Fahlander, C.; Rietz, R. du; Ragnarsson, I.; Torres, D. A.; Carpenter, M. P.; Seweryniak, D.; Zhu, S.; Charity, R. J.; Chiara, C. J.; Hoel, C.; Reviol, W.; Sarantites, D. G.; Sobotka, L. G.; Pechenaya, O. L.

    2009-02-15

    The {sub 30}{sup 61}Zn{sub 31} nucleus has been studied via the combined data of two fusion-evaporation reaction experiments using a {sup 36}Ar beam and a {sup 28}Si target foil. The experimental setups involved the Ge array GAMMASPHERE and neutron and charged particle detectors placed around the target position. The resulting level scheme comprises about 120 excited states connected via some 180 {gamma}-ray transitions. In total, seven rotational structures were identified up to I{approx}25 or higher and compared with predictions from cranked Nilsson-Strutinsky calculations.

  9. Down-conversion photoluminescence sensitizing plasmonic silver nanoparticles on ZnO nanorods to generate hydrogen by water splitting photochemistry

    SciTech Connect (OSTI)

    Kung, Po-Yen; Huang, Li-Wen; Shen, Tin-Wei; Wang, Wen-Lin; Su, Yen-Hsun; Lin, Melody I.

    2015-01-12

    Silver nanoparticles fabricated onto the surface of the ZnO nanorods form the photoanode and generate photoelectric current due to surface plasmon resonance, which serves as anode electrodes in photoelectrochemical hydrogen production. In order to increase the absorption spectrum of photoanode, organic pigments were utilized as photo-sensitizers to generate down-conversion photoluminescence to excite surface plasmon resonances of silver nanoparticles. The way of using light to carry the energy in electronic scattering regime runs the system for the enhancement of solar water splitting efficiency. It was significantly tuned in environmentally sustainable applications for power generation and development of alternative energy.

  10. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K

    SciTech Connect (OSTI)

    Quitsch, Wolf; Kmmell, Tilmar; Bacher, Gerd; Gust, Arne; Kruse, Carsten; Hommel, Detlef

    2014-09-01

    High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28??0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

  11. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    SciTech Connect (OSTI)

    Sklyarchuk, V.; Fochuk, p.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O. F.; Bolotnikov, A. E.; James, R. B.

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  12. Mg{sub x}Zn{sub 1-x}O (x = 0-1) films fabricated by sol-gel spin coating

    SciTech Connect (OSTI)

    Caglar, Mujdat [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey)] [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey); Wu, Junshu; Li, Keyan [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China); Caglar, Yasemin; Ilican, Saliha [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey)] [Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir (Turkey); Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

    2010-03-15

    Mg{sub x}Zn{sub 1-x}O films were deposited onto the glass substrate by a sol-gel spin coating method. The drying and annealing temperatures were 300 and 500 {sup o}C in air. As x varies from 0 to 1, it was observed that the crystal structure is changed from wurtzite ZnO to cubic MgO. The morphology characterizations of these films were observed by scanning electron microscope. The randomly oriented hexagonal nanorods were gown on the glass surface when x = 0 and 0.25, which became disappeared with increasing Mg contents. The optical properties of these films were investigated by room-temperature photoluminescence (PL) and UV-vis absorption spectra, which show that the optical band gap and photoluminescence in the visible and UV regions can be ideally tuned by varying the Mg contents in the Mg{sub x}Zn{sub 1-x}O alloy films.

  13. Efficient enhancement of hydrogen production by Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrochemical cell

    SciTech Connect (OSTI)

    Liu, Ying; Ren, Feng Chen, Chao; Liu, Chang; Xing, Zhuo; Liu, Dan; Xiao, Xiangheng; Wu, Wei; Zheng, Xudong; Liu, Yichao; Jiang, Changzhong; Shen, Shaohua; Fu, Yanming

    2015-03-23

    Highly efficient semiconductor photoelectrodes for solar hydrogen production through photocatalytic water splitting are a promising and challenge solution to solve the energy problems. In this work, Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrode was designed and prepared. An increase of 11 times of photocurrent is achieved in the Ag/Cu{sub 2}O/ZnO photoelectrode comparing to that of the Cu{sub 2}O film. The high performance of the Ag/Cu{sub 2}O/ZnO film is due to the optimized design of the tandem triple-junction structure, where the localized surface Plasmon resonance of Ag and the hetero-junctions efficiently absorb solar energy, produce, and separate electron-hole pairs in the photocathode.

  14. Ag{sub 3}PO{sub 4}/ZnO: An efficient visible-light-sensitized composite with its application in photocatalytic degradation of Rhodamine B

    SciTech Connect (OSTI)

    Liu, Wei; School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 ; Wang, Mingliang; Xu, Chunxiang; Chen, Shifu; Fu, Xianliang

    2013-01-15

    Graphical abstract: The free OH radicals generated in the VB of ZnO play the primary role in the visible-light photocatalytic degradation of RhB in Ag{sub 3}PO{sub 4}/ZnO system. The accumulated electrons in the CB of Ag{sub 3}PO{sub 4} can be transferred to O{sub 2} adsorbed on the surface of the composite semiconductors and H{sub 2}O{sub 2} yields. H{sub 2}O{sub 2} reacts with electrons in succession to produce active OH to some extent. Display Omitted Highlights: ? Efficient visible-light-sensitized Ag{sub 3}PO{sub 4}/ZnO composites were successfully prepared. ? Effect of Ag{sub 3}PO{sub 4} content on the catalytic activity of Ag{sub 3}PO{sub 4}/ZnO is studied in detail. ? Rate constant of RhB degradation over Ag{sub 3}PO{sub 4}(3.0 wt.%)/ZnO is 3 times that of Ag{sub 3}PO{sub 4}. ? The active species in RhB degradation are examined by adding a series of scavengers. ? Visible light degradation mechanism of RhB over Ag{sub 3}PO{sub 4}/ZnO is systematically studied. -- Abstract: The efficient visible-light-sensitized Ag{sub 3}PO{sub 4}/ZnO composites with various weight percents of Ag{sub 3}PO{sub 4} were prepared by a facile ball milling method. The photocatalysts were characterized by XRD, DRS, SEM, EDS, XPS, and BET specific area. The OH radicals produced during the photocatalytic reaction was detected by the TAPL technique. The photocatalytic property of Ag{sub 3}PO{sub 4}/ZnO was evaluated by photocatalytic degradation of Rhodamine B under visible light irradiation. Significantly, the results revealed that the photocatalytic activity of the composites was much higher than that of pure Ag{sub 3}PO{sub 4} and ZnO. The rate constant of RhB degradation over Ag{sub 3}PO{sub 4}(3.0 wt.%)/ZnO is 3 times that of single-phase Ag{sub 3}PO{sub 4}. The optimal percentage of Ag{sub 3}PO{sub 4} in the composite is 3.0 wt.%. It is proposed that the OH radicals produced in the valence band of ZnO play the leading role in the photocatalytic degradation of Rhodamine B by

  15. The effect of the nature of a modifying additive (Pt, Zn, Ga) on the activity of oxide and zeolite catalysts in ethane dehydrogenation and aromatization

    SciTech Connect (OSTI)

    Vasina, T.V.; Masloboyshchikova, O.V.; Chetina, O.V.

    1994-10-01

    The catalytic properties of Pt, Zn, and Ga deposited on supports of various natures (Al{sub 2}O{sub 3}, SiO{sub 2}, NaZSM, and HZSM) in the dehydrogenation and aromatization of ethane were investigated. Pt-containing catalysts are the most active in the conversion of ethane: the selectivity with respect to ethylene is 25-87% depending on the nature of the support. In the presence of Zn- and Ga-containing catalysts the yield of ethylene is 2-3 times lower than with Pt-catalysts. With HZSM modified by Pt, Zn, or Ga aromatic hydrocarbons (ArH) and methane are the main products of ethane transformation. Ga/HZSM is the most efficient catalyst of the aromatization of ethane under the conditions studied (550 {degrees}C, 120 h{sup -1}).

  16. Preparation of aluminum foil-supported nano-sized ZnO thin films and its photocatalytic degradation to phenol under visible light irradiation

    SciTech Connect (OSTI)

    Peng Feng . E-mail: cefpeng@scut.edu.cn; Wang Hongjuan; Yu Hao; Chen Shuihui

    2006-11-09

    The zinc oxide thin films on aluminum foil have been successfully prepared by sol-gel method with methyl glycol as solvent. The film was characterized by means of XRD, TG, UV-vis, SEM and AFM, which show that the ZnO/Al film is formed by a layer of ZnO nano-sized particles with average diameter of 52.2 nm. Under the initial concentration of 20 mg/L phenol solution (500 mL) and visible light irradiation time of 3 h, more than 40% of the initial phenol was totally mineralized using two pieces of ZnO/Al thin film as photocatalyst with an efficient irradiation area of 400 cm{sup 2}. It is a promising visible light responded photocatalyst for the activation of O{sub 2} at room temperature to degrade organic pollutants.

  17. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect (OSTI)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  18. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng; Li Xiaomin; Gan Xiaoyan; Sellers, Ian R.

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  19. Linear and nonlinear transmission of Fe{sup 2+}-doped ZnSe crystals at a wavelength of 2940 nm in the temperature range 20220 C

    SciTech Connect (OSTI)

    Il'ichev, N N; Pashinin, P P; Gulyamova, E S; Bufetova, G A; Shapkin, P V; Nasibov, A S

    2014-03-28

    The linear and nonlinear transmission of Fe{sup 2+}:ZnSe crystals is measured at a wavelength of 2940 nm in the temperature range 20 220 C. It is found that, with increasing temperature from 20 C to 150 220 C, the transmission of Fe{sup 2+}:ZnSe crystals decreases in the case of incident radiation with an intensity of ?5.5 MW cm{sup -2} and increases in the case of radiation with an intensity of 28 kW cm{sup -2}. At a temperature of 220 C, the linear transmission almost coincides with the nonlinear transmission. The transmission spectra of Fe{sup 2+}:ZnSe crystals at temperatures of 22 and 220 C in the wavelength range 500 7000 nm are presented. (active media)

  20. Structure and optical homogeneity of LiNbO{sub 3}:Zn (0.03–4.5 mol.%) crystals

    SciTech Connect (OSTI)

    Sidorov, Nikolay E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Tepljakova, Natalja E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Gabain, Aleksei E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Yanichev, Aleksander E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru Palatnikov, Mikhail E-mail: tepl-na@chemy.kolasc.net.ru E-mail: Jovial1985@yandex.ru

    2014-11-14

    Structure and optical homogeneity of LiNbO{sub 3}:Zn (0.03–4.5 mol.%) crystals were searched by photoinduced light scattering and by Raman spectroscopy. The photorefractive effect depends on Zn{sup 2+} concentration nonmonotonically. Decrease of photorefractive effect is explained by decrease of structure defects with localized electrons. The Zn{sup 2+} cations replace structure defects Nb{sub Li} and Li{sub Nb}, trapping levels appear near the bottom of the conduction band and photo electrons recombine with emission under laser radiation. By the Raman spectra the area of the high structure order is found. In this area the own alternation, the alternation of impurity cations and the vacancies along the polar axis is almost perfect.