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Sample records for zn cd hg

  1. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    SciTech Connect (OSTI)

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L.

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  2. Dielectric functions and carrier concentrations of Hg{sub 1−x}Cd{sub x}Se films determined by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Lee, A. J.; Peiris, F. C.; Brill, G.; Doyle, K.; Myers, T. H.

    2015-08-17

    Spectroscopic ellipsometry, ranging from 35 meV to 6 eV, was used to determine the dielectric functions of a series of molecular beam epitaxy-grown Hg{sub 1−x}Cd{sub x}Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates. The fundamental band gap as well as two higher-order electronic transitions blue-shift with increasing Cd composition in Hg{sub 1−x}Cd{sub x}Se, as expected. Representing the free carrier absorption with a Drude oscillator, we found that the effective masses of Hg{sub 1−x}Cd{sub x}Se (grown on ZnTe/Si) vary between 0.028 and 0.050 times the free electron mass, calculated using the values of carrier concentration and the mobility obtained through Hall measurements. Using these effective masses, we determined the carrier concentrations of Hg{sub 1−x}Cd{sub x}Se samples grown on GaSb, which is of significance as films grown on such doped-substrates posit ambiguous results when measured by conventional Hall experiments. These models can serve as a basis for monitoring Cd-composition during sample growth through in-situ spectroscopic ellipsometry.

  3. The new barium zinc mercurides Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} - Synthesis, crystal and electronic structure

    SciTech Connect (OSTI)

    Schwarz, Michael; Wendorff, Marco; Roehr, Caroline

    2012-12-15

    The title compounds Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba{sub 3}ZnHg{sub 10} (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4{sup 4} Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl{sub 4}. The flat pyramids are connected via Hg-Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M-M distances (273-301 pm; CN 9-11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317-348 pm) to their Zn/Hg neighbours. In the structure of BaZn{sub 0.6}Hg{sub 3.4} (cubic, cI320, space group I4{sup Macron }3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba{sub 3}ZnHg{sub 10}, the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4 Multiplication-Sign 4 Multiplication-Sign 4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6){sub 4} with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4){sub 2} dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb{sub 3}Hg{sub 20} applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic

  4. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect (OSTI)

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  5. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  6. CdS and CdS/CdSe sensitized ZnO nanorod array solar cells prepared by a solution ions exchange process

    SciTech Connect (OSTI)

    Chen, Ling; Gong, Haibo; Zheng, Xiaopeng; Zhu, Min; Zhang, Jun; Yang, Shikuan; Cao, Bingqiang

    2013-10-15

    Graphical abstract: - Highlights: CdS and CdS/CdSe quantum dots are assembled on ZnO nanorods by ion exchange process. The CdS/CdSe sensitization of ZnO effectively extends the absorption spectrum. The performance of ZnO/CdS/CdSe cell is improved by extending absorption spectrum. - Abstract: In this paper, cadmium sulfide (CdS) and cadmium sulfide/cadmium selenide (CdS/CdSe) quantum dots (QDs) are assembled onto ZnO nanorod arrays by a solution ion exchange process for QD-sensitized solar cell application. The morphology, composition and absorption properties of different photoanodes were characterized with scanning electron microscope, transmission electron microscope, energy-dispersive X-ray spectrum and Raman spectrum in detail. It is shown that conformal and uniform CdS and CdS/CdSe shells can grow on ZnO nanorod cores. Quantum dot sensitized solar cells based on ZnO/CdS and ZnO/CdS/CdSe nanocable arrays were assembled with gold counter electrode and polysulfide electrolyte solution. The CdS/CdSe sensitization of ZnO can effectively extend the absorption spectrum up to 650 nm, which has a remarkable impact on the performance of a photovoltaic device by extending the absorption spectrum. Preliminary results show one fourth improvement in solar cell efficiency.

  7. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  8. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    SciTech Connect (OSTI)

    Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  9. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  10. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect (OSTI)

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  11. Purification of CdZnTe by Electromigration

    SciTech Connect (OSTI)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  12. Purification of CdZnTe by Electromigration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  13. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  14. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  15. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect (OSTI)

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of stirring defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700?C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  16. Synthesis, crystal structure and optical property of a novel metal chalcohalide: ZnHg{sub 3}Se{sub 2}Cl{sub 4}

    SciTech Connect (OSTI)

    Zhang, Guodong; Xiong, Wei-Wei; Nie, Lina; Zhang, Qichun

    2015-10-15

    A novel chalcohalide ZnHg{sub 3}Se{sub 2}Cl{sub 4} has been synthesized through a solid state method and structurally characterized by single-crystal X-ray diffraction. It crystallizes in the acentric space group Cmc2{sub 1} (No. 36) with cell parameters a=7.3262(8) Å, b=12.518(2) Å, c=11.3324(14) Å. The compound consists of 12-membered Hg{sub 6}Se{sub 6} rings edge-sharing with six neighbored rings to construct a 2D layered network and the ZnCl{sub 4} tetrahedra are sandwiched between layers. TG-DTA measurement shows that the compound is thermally stable up to 300 °C. The band gap of the crystal is about 2.23 eV, and the crystal exhibits a broad transparent range from 0.56 to 13.8 µm. - Highlights: • A novel chalcohalide ZnHg{sub 3}Se{sub 2}Cl{sub 4} was synthesized by a solid state method. • The structure contains 12-membered Hg{sub 6}Se{sub 6} rings and ZnCl{sub 4} tetrahedra. • The band gap of the as-prepared compound is about 2.23 eV.

  17. Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

    SciTech Connect (OSTI)

    Qiu, W. C.; Wang, R.; Xu, Z. J.; Jiang, T.; Cheng, X. A.

    2014-05-28

    In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

  18. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect (OSTI)

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  19. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  20. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  1. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  2. sup 3 P Hg, Cd, and Zn photosensitized chemistry of vinyl halides in krypton matrix

    SciTech Connect (OSTI)

    Cartland, H.E.; Pimentel, G.C. )

    1990-01-25

    The reaction of group IIB metals in the {sup 3}P state with vinyl fluoride, chloride, and bromide is studied in krypton matrix. The primary process in all cases is hydrogen halide elimination to form a hydrogen halide/acetylene hydrogen-bonded complex. Insertion of metal atoms into C-Cl and C-Br bonds, but not into C-H and C-F bonds, is also observed. The insertion photochemistry can be explained by a mechanism which requires that the process occur on a triplet surface with the vinyl halide in the planar ground-state conformation.

  3. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect (OSTI)

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  4. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect (OSTI)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  5. Removal of Zn or Cd and cyanide from cyanide electroplating wastes

    DOE Patents [OSTI]

    Moore, Fletcher L.

    1977-05-31

    A method is described for the efficient stripping of stable complexes of a selected quaternary amine and a cyanide of Zn or Cd. An alkali metal hydroxide solution such as NaOH or KOH will quantitatively strip a pregnant extract of the quaternary ammonium complex of its metal and cyanide content and regenerate a quaternary ammonium hydroxide salt which can be used for extracting further metal cyanide values.

  6. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect (OSTI)

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  7. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  8. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  9. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  10. Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

    DOE Patents [OSTI]

    Hoffbauer, Mark A.; Prettyman, Thomas H.

    2001-01-01

    Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

  11. Effects of hydrogen on the optical properties of ZnCdO/ZnO quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Buyanova, I. A.; Wang, X. J.; Chen, W. M.; Pozina, G.; Lim, W.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W.; Hertog, B.

    2008-06-30

    Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO/ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of {sup 2}H from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

  12. Photoluminescence Enhancement in CdSe/ZnSDNA linkedAu Nanoparticle Heterodimers Probed by Single Molecule Spectroscopy

    SciTech Connect (OSTI)

    Cotlet, M.; Maye, M.M.; Gang, O.

    2010-07-26

    Photoluminescence enhancement of up to 20 fold is demonstrated at the single molecule level for heterodimers composed of a core/shell CdSe/ZnS semiconductive quantum dot and a gold nanoparticle of 60 nm size separated by a 32 nm-long dsDNA linker when employing optical excitation at wavelengths near the surface plasmon resonance of the gold nanoparticle.

  13. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  14. Synthesis and Optical Properties of Thiol Functionalized CdSe/ZnS (Core/Shell) Quantum Dots by Ligand Exchange

    SciTech Connect (OSTI)

    Zhu, Huaping; Hu, Michael Z.; Shao, Lei; Yu, Kui; Dabestani, Reza T; Zaman, Md. Badruz; Liao, Dr. Shijun

    2014-03-20

    The colloidal photoluminescent quantum dots (QDs) of CdSe (core) and CdSe/ZnS (core/shell) were synthesized at different temperatures with different growth periods. The optical properties (i.e., UV/Vis spectra and photoluminescent emission spectra) of the resulting QDs were investigated. The CdSe/ZnS QDs exhibited higher photoluminescent (PL) efficiency and stability than their corresponding CdSe core QDs. Ligand exchange with various thiol molecules was performed to replace the initial surface passivation ligands, that is, trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP), and the optical properties of the surface-modified QDs were studied. The thiol ligand molecules used included 1,4-benzenedimethanethiol, 1,16-hexadecanedithiol, 1,11-undecanedithiol, 11-mercapto-1-undecanol, and 1,8 octanedithiol. After the thiol functionalization, the CdSe/ZnS QDs exhibited significantly enhanced PL efficiency and storage stability. Besides surface passivation effect, such enhanced performance of thiol-functionalized QDs could be due to self-assembly formation of dimer/trimer clusters, in which QDs are linked by dithiol molecules. Effects of ligand concentration, type of ligand, and heating on the thiol stabilization of QDs were also discussed.

  15. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  16. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  17. Temperature dependence of the carrier lifetime in narrow-gap Cd{sub x}Hg{sub 1–x}Te solid solutions: Radiative recombination

    SciTech Connect (OSTI)

    Bazhenov, N. L. Mynbaev, K. D.; Zegrya, G. G.

    2015-09-15

    The probability of the radiative recombination of carriers in narrow-gap semiconductors is analyzed for the example of Cd{sub x}Hg{sub 1–x}Te solid solutions. Expressions are derived for the imaginary part of the dielectric permittivity in terms of the three-band Kane’s model with consideration for the nonparabolic dependence of the carrier energy on the wave vector. It is shown that taking into account this nonparabolicity of the energy spectrum of carriers modifies the dependence of the imaginary part of the dielectric permittivity on frequency. Expressions for the probability of radiative recombination, derived in terms of the simple parabolic model and Kane’s model with and without the nonparabolicity effect taken into account, are compared. It is shown that the contributions to recombination from electron transitions to heavy- and light-hole bands are close and the contribution from light holes cannot be neglected when calculating the radiative-recombination probability.

  18. Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Hasoon, F. S.; Al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.

    2008-05-01

    This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.

  19. Co-sensitization of ZnO by CdS quantum dots in natural dye-sensitized solar cells with polymeric electrolytes to improve the cell stability

    SciTech Connect (OSTI)

    Junhom, W.; Magaraphan, R.

    2015-05-22

    The CdS quantum dots (QDs) were deposited on ZnO layer by chemical bath deposition method to absorb light in the shorter wavelength region and used as photoanode in the dye sensitized solar cell (DSSCs) with natural dye extracted from Noni leaves. Microstructures of CdS-ZnO from various dipping time were characterized by XRD, FE-SEM and EDX. The results showed that the CdS is hexagonal structure and the amount of CdS increases when the dipping time increases. The maximal conversion efficiency of 0.292% was achieved by the DSSCs based on CdS QDs-sensitized ZnO film obtained from 9 min-dipping time. Furthermore, the stability of DSSCs was improved by using polymeric electrolyte. Poly (acrylic acid) (PAA) and Polyacrylamide (PAM) were introduced to CdS QDs-sensitized ZnO film from 9 min-dipping time. Each polymeric electrolyte was prepared by swelling from 0.1-2.0 %w in H2O. The maximal conversion efficiency of 0.207% was achieved for DSSCs based on CdS QDs-sensitized ZnO film with PAM 1.0% and the conversion efficiency was decreased 25% when it was left for1 hr.

  20. Sulfur L{sub 2,3} soft-x-ray fluorescence of CdS and ZnS

    SciTech Connect (OSTI)

    Zhou, L.; Callcott, T.A.; Jia, J.J.

    1997-04-01

    The II-VI sulfur compounds CdS and ZnS have important electro-optics applications. In addition, they have well characterized and relatively simple structures so that they are good candidates for theoretical model development in solid-state physics. Some experimental results on density of states have been reported, mostly determined from photoemission measurements, and theoretical calculations are available for both materials. Nevertheless the electronic properties of these elements are still not completely understood. It has been established that the d-bands, derived from Cd or Zn, lie in a subband gap between a lower valence band (LVB) derived from the S 3s orbital and an upper valence band (UVB) derived from the 3p states of S and the 4(3)s states of Cd(Zn). The locations of these bands within the gap disagree with the best available calculations, however. The principal problem is that experimental photoemission measurements locate the d-bands about 2 eV lower in the band gap than the best available calculations. Some authors argue that the hole in the d-band in the final state of the photoemission process increases the binding of the d-electrons. In any case, band gaps, band widths and the precise location of d-bands are important parameters for comparing experiment and theory, and no current calculations give good agreement with all of these parameters. Moreover, photoemission data does not adequately define all of these experimental parameters, because the d-state photoemission dominates that from s and p states and sample charging effects can modify the energy of emitted electrons. The authors report photon excited soft x-ray fluorescence (SXF) S L{sub 2,3} spectra from CdS and ZnS. Using excitation between the L{sub 2} and L{sub 3} thresholds, the L{sub 2} spectrum is suppressed, which permits the authors to accurately determine features of the UVB and LVB as well as the placement of the Cd(Zn) d-bands between the UVB and LVB.

  1. Selective Zn2+ sensing using a modified bipyridine complex

    SciTech Connect (OSTI)

    Akula, Mahesh; El-Khoury, Patrick Z.; Nag, Amit; Bhattacharya, Anupam

    2014-06-01

    A novel fluorescent Zn2+ sensor, 4-(pyridin-2-yl)-3H-pyrrolo[2, 3-c]quinoline (PPQ), has been designed, synthesized and characterized by various spectroscopic and analytical techniques. PPQ exhibits superior detection of Zn2+ in the presence of various cations tested, including Cd2+ and Hg2+, via wavelength shifted fluorescence intensity enhancement. The emission wavelength at 500 nm, ensures probable noninterference from cellular components while performing biological applications.

  2. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    temperature gradient, we observed the migration of Te inclusions from a low-temperature ... These results show that the migration, diffusion, and reaction of Te with Cd in the matrix ...

  3. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  4. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  5. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K

    SciTech Connect (OSTI)

    Quitsch, Wolf; Kmmell, Tilmar; Bacher, Gerd; Gust, Arne; Kruse, Carsten; Hommel, Detlef

    2014-09-01

    High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28??0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

  6. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect (OSTI)

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  7. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    SciTech Connect (OSTI)

    Sklyarchuk, V.; Fochuk, p.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O. F.; Bolotnikov, A. E.; James, R. B.

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  8. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect (OSTI)

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  9. Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates

    SciTech Connect (OSTI)

    Kwak, Kiyeol; Cho, Kyoungah, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr; Kim, Sangsig, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)] [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2014-03-10

    We investigate the electroluminescence (EL) characteristics of a hybrid light-emitting diode (HyLED) with an emissive layer comprised of CdSe/Cd/ZnS core-shell nanoparticles (NPs) embedded in poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) on a plastic substrate. The EL characteristics change dramatically with increasing of the biased voltage. At low voltages, recombination of electrons and holes occurs only in the PFO film because of poor charge transfer in the PFO-CdSe/Cd/ZnS NPs composite film, while the color of the light-emitting from the HyLED changes from blue to red as the biased voltage increases from 7.5 to 17.5?V. We examine and discuss the mechanism of this color tunability.

  10. TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

    2009-01-01

    This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

  11. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    SciTech Connect (OSTI)

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers after mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better

  12. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM

  13. Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors

    SciTech Connect (OSTI)

    Bolotnikov, A. E. Camarda, G. S.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Marshall, M.; Roy, U.; Vernon, E.; Yang, G.; James, R. B.; Lee, K.; Petryk, M.

    2014-06-30

    CdZnTe (CZT) is a promising medium for room-temperature gamma-ray detectors. However, the low production yield of acceptable quality crystals hampers the use of CZT detectors for gamma-ray spectroscopy. Significant efforts have been directed towards improving quality of CZT crystals to make them generally available for radiation detectors. Another way to address this problem is to implement detector designs that would allow for more accurate and predictable correction of the charge loss associated with crystal defects. In this work, we demonstrate that high-granularity position-sensitive detectors can significantly improve the performance of CZT detectors fabricated from CZT crystals with wider acceptance boundaries, leading to an increase of their availability and expected decrease in cost.

  14. Homogeneous and inhomogeneous sources of optical transition broadening in room temperature CdSe/ZnS nanocrystal quantum dots

    SciTech Connect (OSTI)

    Wolf, M.; Berezovsky, J.

    2014-10-06

    We perform photoluminescence excitation measurements on individual CdSe/ZnS nanocrystal quantum dots (NCQDs) at room temperature to study optical transition energies and broadening. The observed features in the spectra are identified and compared to calculated transition energies using an effective mass model. The observed broadening is attributed to phonon broadening, spectral diffusion, and size and shape inhomogeneity. The former two contribute to the broadening transitions in individual QDs, while the latter contributes to the QD-to-QD variation. We find that phonon broadening is often not the dominant contribution to transition line widths, even at room temperature, and that broadening does not necessarily increase with transition energy. This may be explained by differing magnitude of spectral diffusion for different quantum-confined states.

  15. Effect of large additions of Cd, Pb, Cr, Zn, to cement raw meal on the composition and the properties of the clinker and the cement

    SciTech Connect (OSTI)

    Murat, M.; Sorrentino, F.

    1996-03-01

    The utilization of hydraulic binders to solidify and to stabilize industrial wastes and municipal garbage is presently recognized as one of the solutions to the problem of environment protection. Te addition of important quantities of Cd, Pb, Cr, Zn to raw meals of Portland and calcium aluminate cement modifies the mineralogical composition and the properties of the final cement. Portland cement can absorb a large amount of Cd and Zn. This absorption leads to an increase of setting time and a decrease of strengths of the cement. It also can trap chromium with a short setting time and high strengths. Calcium aluminate cements easily trap Cd and Cr with a delayed setting and good strength but also Pb with normal setting time and strengths. Large quantities of zinc oxide have a deleterious effect on calcium aluminate strengths.

  16. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    SciTech Connect (OSTI)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.

  17. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55??m

    SciTech Connect (OSTI)

    Chen, Guopeng; Shen, Aidong; De Jesus, Joel; Tamargo, Maria C.

    2014-12-08

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

  18. Temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions with consideration for Auger processes

    SciTech Connect (OSTI)

    Bazhenov, N. L. Mynbaev, K. D.; Zegrya, G. G.

    2015-04-15

    The temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions in the temperature range 5 K < T < 300 K is analyzed within the scope of a microscopic model. Main attention is given to an analysis of the Auger recombination mechanism governing the carrier lifetime at high temperatures. The Auger-recombination rates are calculated with consideration for specific features of the band structure of the narrow-gap semiconductor in microscopic theory. It is shown that strict account of the non-parabolicity of the electronic structure in terms of Kane’s model leads to a substantially different temperature dependence of the Auger-recombination rates, compared with the approach in which nonparabolicity is disregarded.

  19. Effect of annealing on the kinetic properties and band parameters of Hg{sub 1?x?y}Cd{sub x}Eu{sub y}Se semiconductor crystals

    SciTech Connect (OSTI)

    Kovalyuk, T. T. Maistruk, E. V.; Maryanchuk, P. D.

    2014-12-15

    The results of studies of the kinetic properties of Hg{sub 1?x?y}Cd{sub x}Eu{sub y}Se semiconductor crystals in the ranges of temperatures T = 77300 K and magnetic fields H = 0.55 kOe before and after heat treatment of the samples in Se vapors are reported. It is established that annealing of the samples in Se vapors induces a decrease in the electron concentration. From the concentration dependence of the electron effective mass at the Fermi level, the band gap, the matrix element of interband interaction, and the electron effective mass at the bottom of the conduction band are determined.

  20. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  1. In situ capping for size control of monochalcogenides (ZnS, CdS, and SnS) nanocrystals produced by anaerobic metal-reducing bacteria

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jang, Gyoung Gug; Jacobs, Christopher B.; Ivanov, Ilia N.; Joshi, Pooran C.; Meyer, III, Harry M.; Kidder, Michelle; Armstrong, Beth L.; Datskos, Panos G.; Graham, David E.; Moon, Ji -Won

    2015-07-24

    Metal monochalcogenide quantum dot nanocrystals of ZnS, CdS and SnS were prepared by anaerobic, metal-reducing bacteria using in situ capping by oleic acid or oleylamine. Furthermore, the capping agent preferentially adsorbs on the surface of the nanocrystal, suppressing the growth process in the early stages, thus leading to production of nanocrystals with a diameter of less than 5 nm.

  2. In situ capping for size control of monochalcogenides (ZnS, CdS, and SnS) nanocrystals produced by anaerobic metal-reducing bacteria

    SciTech Connect (OSTI)

    Jang, Gyoung Gug; Jacobs, Christopher B; Ivanov, Ilia N; Joshi, Pooran C; Meyer III, Harry M; Kidder, Michelle; Armstrong, Beth L; Datskos, Panos G; Graham, David E; Moon, Ji Won

    2015-01-01

    Metal monochalcogenide quantum dot nanocrystals of ZnS, CdS and SnS were prepared by anaerobic, metal-reducing bacteria using in situ capping by oleic acid or oleylamine. The capping agent preferentially adsorbs on the surface of the nanocrystal, suppressing the growth process in the early stages, thus leading to production of nanocrystals with a diameter of less than 5 nm.

  3. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  4. CdSe/ZnS quantum dots based electrochemical immunoassay for the detection of phosphorylated bovine serum albumin

    SciTech Connect (OSTI)

    Pinwattana, Kulwadee; Wang, Jun; Lin, Chiann Tso; Wu, Hong; Du, Dan; Lin, Yuehe; Chailapakul, Orawon

    2010-11-15

    A CdSe/ZnS quantum dot (QD) based electrochemical immunoassay of phosphorylated bovine serum albumin as a protein biomarker is presented. The QDs were used as labels and were conjugated with the secondary anti-phosphoserine antibody in a heterogeneous sandwich immunoassay. First, the primary BSA antibody was immobilized on polystyrene microwells, followed by the addition of BSA-OP. After that, the QD-labeled anti-phosphoserine antibody was added into microwells for immunorecognition. Finally, the bound QD was dissolved in an acid-dissolution step and was detected by electrochemical stripping analysis. The measured current responses were proportional to the concentration of BSA-OP. Under optimal conditions, the voltammetric response was linear over the range of 0.5 - 500 ng mL-1 of BSA-OP, with a detection limit of 0.5 ng mL-1 at a deposition potential of -1.2 V for 120 s. It also shows good reproducibility with a relative standard deviation of 8.6% of six times determination of 25 ng mL-1 of BSA-OP. This QD-based electrochemical immunoassay offers great promise for simple and cost-effective analysis of protein biomarkers.

  5. Structural, elastic, electronic and phonon properties of SnX{sub 2}O{sub 4} (X=Mg, Zn, Cd) spinel from density functional theory

    SciTech Connect (OSTI)

    U?ur, Gkay; Candan, Abdullah

    2014-10-06

    First-principle calculations of structural, electronic, elastic and phonon properties of SnMg{sub 2}O{sub 4}, SnZn{sub 2}O{sub 4} and SnCd{sub 2}O{sub 4} compounds are presented, using the pseudo-potential plane waves approach based on density functional theory (DFT) within the generalized gradient approximation (GGA). The computed ground state structural parameters, i.e. lattice constants, internal free parameter and bulk modulus are in good agreement with the available theoretical results. Our calculated elastic constants are indicative of stability of SnX{sub 2}O{sub 4} (X=Mg, Zn, Cd) compounds in the spinel structure. The partial density of states (PDOS) of these compounds is in good agreement with the earlier ab-initio calculations. The phonon dispersion relations were calculated using the direct method. Phonon dispersion results indicate that SnZn{sub 2}O{sub 4} is dynamically stable, while SnMg{sub 2}O{sub 4} and SnCd{sub 2}O{sub 4} are unstable.

  6. Synthesis, structures, and properties of three Zn(II), Mn(II), and Cd(II) compounds based on tetrazole-1-acetic ligand

    SciTech Connect (OSTI)

    Liu, Dong-Sheng Chen, Wen-Tong; Xu, Ya-Ping; Shen, Ping; Hu, Shao-Jun; Sui, Yan

    2015-03-15

    Three new compounds, ([Zn(tza){sub 2}(H{sub 2}O)]·H{sub 2}O){sub n} (1), ([Mn(tza){sub 2}(Htza){sub 2}]·2H{sub 2}O){sub n} (2) and [Cd(tza){sub 2}]{sub n} (3), were obtained by reactions of 1H-Tetrazole-1-acetic (Htza) with corresponding metal salts, and characterized by elemental analysis, infrared spectroscopy, and single crystal X-ray diffraction, respectively. The X-ray diffraction analysis reveals that compound 1 is three-dimensional (3D) supramolecular structure with line chains. Compound 2 is three-dimensional (3D) supramolecular structure with Mn-carboxylate chains. Compound 3 is a 3D framework with (3,6)-connected ‘ant’ topological network. Furthermore, the photoluminescence of 1 and 3 and the magnetic properties of 2 have also been investigated. - Graphical abstract: Three new Zn/Mn/Cd compounds were obtained by reactions of Htza with corresponding metal salts, and characterized by chemical methods. Different linear chains result in different final structures. Compounds 1 and 2 are 3D supramolecular structures. Compound 3 is a 3D framework with (3,6)-connected ‘ant’ topological network. - Highlights: • Three new Zn/Mn/Cd compounds based on Htza ligand has been synthesized. • Different linear chains result in different final structures. • The fluorescence or magnetic properties have been investigated.

  7. Preparation of water soluble L-arginine capped CdSe/ZnS QDs and their interaction with synthetic DNA: Picosecond-resolved FRET study

    SciTech Connect (OSTI)

    Giri, Anupam; Goswami, Nirmal; Lemmens, Peter; Pal, Samir Kumar

    2012-08-15

    Graphical abstract: Frster resonance energy transfer (FRET) studies on the interaction of water soluble arginine-capped CdSe/ZnS QDs with ethidium bromide (EB) labeled synthetic dodecamer DNA. Highlights: ? We have solubilized CdSe/ZnS QD in water replacing their TOPO ligand by L-arginine. ? We have studied arginine@QDDNA interaction using FRET technique. ? Arginine@QDs act as energy donor and ethidium bromide-DNA acts as energy acceptor. ? We have applied a kinetic model to understand the kinetics of energy transfer. ? Circular dichroism studies revealed negligible perturbation in the DNA B-form in the arg@QD-DNA complex. -- Abstract: We have exchanged TOPO (trioctylphosphine oxide) ligand of CdSe/ZnS core/shell quantum dots (QDs) with an amino acid L-arginine (Arg) at the toluene/water interface and eventually rendered the QDs from toluene to aqueous phase. We have studied the interaction of the water soluble Arg-capped QDs (energy donor) with ethidium (EB) labeled synthetic dodecamer DNA (energy acceptor) using picoseconds resolved Frster resonance energy transfer (FRET) technique. Furthermore, we have applied a model developed by M. Tachiya to understand the kinetics of energy transfer and the distribution of acceptor (EB-DNA) molecules around the donor QDs. Circular dichroism (CD) studies revealed a negligible perturbation in the native B-form structure of the DNA upon interaction with Arg-capped QDs. The melting and the rehybridization pathways of the DNA attached to the QDs have been monitored by the CD which reveals hydrogen bonding is the associative mechanism for interaction between Arg-capped QDs and DNA.

  8. Effects of embryonic pre-exposure to methylmercury and Hg/sup 2 +/ on larval tolerance in Fundulus heteroclitus

    SciTech Connect (OSTI)

    Weis, P.; Weis, J.S.

    1983-11-01

    Many reports demonstrate enhanced metal tolerance as a result of previous exposure to low concentrations. Pretreatment of rainbow trout (Salmo gairdneri) eggs with cadmium made the larvae more resistant to subsequent Cd treatment. Larvae of the flagfish, Jordanella floridae, initially exposed as embryos to Zn and to mixtures of Zn and Cd were much more tolerant than those not previously exposed, indicating acclimation during embryonic exposure. Acclimation to metals after pre-exposure was attributed to stimulation of the synthesis of metal-binding proteins, or metallothioneins, in the liver, which form a nontoxic complex with the metal. In this paper we report on the effects of embryonic pre-exposure to methylmercury(meHf) and Hg/sup 2 +/ on larval susceptibility to these toxicants in the killifish, Fundulus heteroclitus.

  9. Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1?x}Zn{sub x}Se thin films

    SciTech Connect (OSTI)

    Akaltun, Yunus; Y?ld?r?m, M. Ali; Ate?, Aytun; Y?ld?r?m, Muhammet

    2012-11-15

    Highlights: ? Cd{sub 1?x}Zn{sub x}Se thin films were deposited using SILAR method. ? The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ? The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1?x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1?x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (?{sub o}, ?{sub ?}) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} ? cm with increasing zinc concentration at room temperature.

  10. Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Kim, Eui-Tae; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul

    2008-11-10

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO{sub 2} thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO{sub 2}/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO{sub 2}/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  11. Fluorescent CdSe/ZnS nanocrystal-peptide conjugates for long-term, nontoxic imaging and nuclear targeting in living cells

    SciTech Connect (OSTI)

    Chen, Fanqing; Gerion, Daniele

    2004-06-14

    One of the biggest challenges in cell biology is the imaging of living cells. For this purpose, the most commonly used visualization tool is fluorescent markers. However, conventional labels, such as organic fluorescent dyes or green fluorescent proteins (GFP), lack the photostability to allow the tracking of cellular events that happen over minutes to days. In addition, they are either toxic to cells (dyes), or difficult to construct and manipulate (GFP). We report here the use of a new class of fluorescent labels, silanized CdSe/ZnS nanocrystal-peptide conjugates, for imaging the nuclei of living cells. CdSe/ZnS nanocrystals, or so called quantum dots (qdots), are extremely photostable, and have been used extensively in cellular imaging of fixed cells. However, most of the studies about living cells so far have been concerned only with particle entry into the cytoplasm or the localization of receptors on the cell membrane. Specific targeting of qdots to the nucleus of living cells ha s not been reported in previous studies, due to the lack of a targeting mechanism and proper particle size. Here we demonstrate for the first time the construction of a CdSe/ZnS nanocrystal-peptide conjugate that carries the SV40 large T antigen nuclear localization signal (NLS), and the transfection of the complex into living cells. By a novel adaptation of commonly used cell transfection techniques for qdots, we were able to introduce and retain the NLS-qdots conjugate in living cells for up to a week without detectable negative cellular effects. Moreover, we can visualize the movement of the CdSe/ZnS nanocrystal-peptide conjugates from cytoplasm to the nucleus, and the accumulation of the complex in the cell nucleus, over a long observation time period. This report opens the door for using qdots to visualize long-term biological events that happen in the cell nucleus, and provides a new nontoxic, long-term imaging platform for cell nuclear processes.

  12. Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: Indirect evidence for a permanent dipole moment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

    2015-08-05

    Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

  13. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells

    SciTech Connect (OSTI)

    Sorokin, S. V. Gronin, S. V.; Sedova, I. V.; Klimko, G. V.; Evropeitsev, E. A.; Baidakova, M. V.; Sitnikova, A. A.; Toropov, A. A.; Ivanov, S. V.

    2015-08-15

    Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnS{sub x}Se{sub 1−x}/CdSe superlattices which are pseudomorphic to GaAs (001) substrates and possess effective band-gap values within the range of E{sub g} ≈ 2.5–2.7 eV are presented. Oscillations of the specular-spot intensity in reflection high-energy electron diffraction are used for in situ control of the superlattice parameters. A method to determine the SL parameters (compositions and thicknesses of the constituent layers) based on combined analysis of the grown structures by low-temperature photoluminescence and X-ray diffractometry is developed. It is found that the parameters of the grown ZnS{sub x}Se{sub 1−x}/CdSe superlattices are close to their design values and the density of extended defects in the structures is low even though the structure thickness (∼300 nm) considerably exceeds the critical thickness for bulk II–VI layers with the same lattice-constant mismatch.

  14. Photophysics of (CdSe)ZnS Colloidal Quantum Dots in an Aqueous Environment Stabilized with Amino Acids and Genetically-Modified Proteins

    SciTech Connect (OSTI)

    Ai, X.; Xu, Q.; Jones, M.; Song, Q.; Ding, S.-Y.; Ellingson, R. J.; Himmel, M.; Rumbles, G.

    2007-01-01

    Using a combination of two amino acids, histidine and N-acetyl-cysteine, to replace the original organic capping groups of (CdSe)ZnS quantum dots, water-soluble and highly luminescent (CdSe)ZnS quantum dots have been successfully prepared at pH 8. Characterization by steady-state and time-resolved photoluminescence spectroscopy, and transient absorption spectroscopy, demonstrate that the electronic properties of these quantum dots exceed those of the original as-synthesized samples dissolved in a more-conventional organic solvent. Furthermore, these amino acid-stabilized quantum dots have been assembled onto a cellulose substrate via cellulose binding proteins that specifically bind to cellulose and was genetically engineered to harbor dual hexahistidine tags at the N- and C-termini to confer binding with the zinc(II) on the quantum dot surface. The spectroscopic measurements show that the protein-bound quantum dots continue to retain their desirable electronic properties when bound on the substrate. Meanwhile, the specific and very selective binding properties of the proteins have remained effective. (1)Select optimal greenhouse gas (GHG) and petroleum reduction strategies for each fleet location, (2)Meet or exceed Federal fleet GHG and petroleum reduction requirements outlined in the Guidance, (3)Acquire vehicles to support these strategies while minimizing fleet size and vehicle miles traveled (VMT), (4)Refine strategies based on agency performance.

  15. High temperature thermoelectric properties of the solid-solution zintl phase Eu₁₁Cd6-xZnxSb₁₂

    SciTech Connect (OSTI)

    Kazem, Nasrin; Hurtado, Antonio; Sui, Fan; Ohno, Saneyuki; Zevalkink, Alexandra; Snyder, Jeffrey G.; Kauzlarich, Susan M.

    2015-08-24

    Solid-solution Zintl compounds with the formulaEu₁₁Cd6-xZnxSb₁₂ have been synthesized from the elements as single crystals using a tin flux according to the stoichiometry Eu:Cd:Zn:Sb:Sn of 11:6–xp:xp:12:30 with xp = 0, 1, 2, 3, 4, 5, and 6, where xp is the preparative amount of Zn employed in the reaction. The crystal structures and the compositions were established by single-crystal as well as powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize isostructurally in the centrosymmetric monoclinic space group C 2/m (No. 12, Z = 2) as the Sr₁₁Cd₆Sb₁₂ structure type (Pearson symbol mC58). There is a miscibility gap at 3 ≤ xp ≤ 4 where the major product crystallizes in a disordered structure related to the Ca₉Mn₄Bi₉ structure type; otherwise, for all other compositions, the Sr₁₁Cd₆Sb₁₂ structure is the majority phase. Eu₁₁Cd₆Sb₁₂ shows lower lattice thermal conductivity relative to Eu₁₁Zn₆Sb₁₂ consistent with its higher mean atomic weight, and as anticipated, the solid-solution samples of Eu₁₁Cd6–xZnxSb₁₂ have effectively reduced lattice thermal conductivities relative to the end member compounds. Eu₁₁̣̣₀(1)Cd₄̣̣₅(2)Zn₁̣̣₅(2)Sb₁₂̣̣₀(1) exhibits the highest zT value of >0.5 at around 800 K which is twice as large as the end member compounds.

  16. BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

    SciTech Connect (OSTI)

    Feng, Jijun; Akimoto, Ryoichi

    2015-10-19

    Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

  17. Fluorescence resonance energy transfer measured by spatial photon migration in CdSe-ZnS quantum dots colloidal systems as a function of concentration

    SciTech Connect (OSTI)

    Azevedo, G.; Monte, A. F. G.; Reis, A. F.; Messias, D. N.

    2014-11-17

    The study of the spatial photon migration as a function of the concentration brings into attention the problem of the energy transfer in quantum dot embedded systems. By measuring the photon propagation and its spatial dependence, it is possible to understand the whole dynamics in a quantum dot system, and also improve their concentration dependence to maximize energy propagation due to radiative and non-radiative processes. In this work, a confocal microscope was adapted to scan the spatial distribution of photoluminescence from CdSe-ZnS core-shell quantum dots in colloidal solutions. The energy migration between the quantum dots was monitored by the direct measurement of the photon diffusion length, according to the diffusion theory. We observed that the photon migration length decreases by increasing the quantum dot concentration, this kind of behavior has been regarded as a signature of Frster resonance energy transfer in the system.

  18. Biogeochemistry of Metalliferous Peats: Sulfur Speciation and Depth Distributions of dsrAB Genes and Cd, Fe, Mn, S, and Zn in Soil Cores

    SciTech Connect (OSTI)

    Martinez,C.; Yanez, C.; Yoon, S.; Bruns, M.

    2007-01-01

    Spatial relationships between concentrations of Cd, Fe, Mn, S, and Zn and bacterial genes for dissimilatory sulfate reduction were studied in soils of the Manning peatland region in western New York. Peat cores were collected within a field exhibiting areas of Zn phytotoxicity, and pH and elemental concentrations were determined with depth. The oxidation states of S were estimated using S-XANES spectroscopy. Soil microbial community DNA was extracted from peat soils for ribosomal RNA intergenic spacer analysis (RISA) of diversity profiles with depth. To assess the presence of sulfate-reducing microorganisms (SRM), DNA extracts were also used as templates for PCR detection of dsrAB genes coding for dissimilatory (bi)sulfite reductase. Elemental distributions, S redox speciation, and detection of dsrAB genes varied with depth and water content. The pH of peat soils increased with depth. The highest concentrations of Zn, Cd, and S occurred at intermediate depths, whereas Mn concentrations were highest in the topmost peat layers. Iron showed a relatively uniform distribution with depth. Concentrations of redox sensitive elements, S and Mn, but not Fe, seemed to respond to variations in water content and indicated vertical redox stratification in peat cores where topmost peats were typically acidic and oxidizing and deeper peats were typically circumneutral and reducing. Even then, S-XANES analyses showed that surface peats contained >50% of the total S in reduced forms while deep peats contained generally <5% of the total S in oxidized forms. While bacterial RISA profiles of the peats were diverse, dsrAB gene detection followed redox stratification chemistry closely. For the most part, dsrAB genes were detected in deeper peats, where S accumulation was evident, while they were not detected in topmost peat layers where Mn accumulation indicated oxic conditions. Combined chemical, spectroscopic, and microbiological analyses indicated that prolonged exposure to dry

  19. Temperature- and frequency-dependent dielectric properties of organic–inorganic hybrid compound: (C{sub 6}H{sub 9}N{sub 2}){sub 2}(Hg{sub 0.75}Cd{sub 0.25})Cl{sub 4}

    SciTech Connect (OSTI)

    Elwej, R. Hamdi, M.; Hannachi, N.; Hlel, F.

    2015-02-15

    Highlights: • We have synthesized a new hybrid compound of composition (C6H9N2)2(Hg0.75Cd0.25)Cl4. • The Ac conductivity of the title material was studied as a function of frequency and temperature. • The dielectric data have been analyzed in modulus formalism using KWW. - Abstract: The bis-2-amino-4-picolinium tetrachloromercurate-cadmate compound (C{sub 6}H{sub 9}N{sub 2}){sub 2}(Hg{sub 0.75}Cd{sub 0.25})Cl{sub 4} was prepared by hydrothermal method and characterized by X-ray diffraction (XRD) technique. The electrical properties of the compound were studied using impedance spectroscopy in the frequency and temperature range of 200 Hz–5 MHz and 308–403 K, respectively. The equivalent circuit is modeled by a combination of a parallel Rp//CPE circuit to explain the impedance results. The dielectric data were analyzed using complex electrical modulus M* at various temperatures. The activation energy responsible for the relaxation calculated from the modulus spectra is found to be almost the same as the value obtained from the temperature variation of dc conductivity. The electrical modulus and its scaling behavior are also investigated.

  20. Optical studies of carriers’ vertical transport in the alternately-strained ZnS{sub 0.4}Se{sub 0.6}/CdSe superlattice

    SciTech Connect (OSTI)

    Evropeytsev, E. A. Sorokin, S. V.; Gronin, S. V.; Sedova, I. V.; Klimko, G. V.; Ivanov, S. V.; Toropov, A. A.

    2015-03-15

    We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS{sub y}Se{sub 1−y} (y = 0.4) superlattice (SL) with effective band-gap E{sub g}{sup eff} ∼ 2.580 eV and a thickness of ∼300 nm, which was grown by molecular-beam epitaxy on a GaAs substrate. The thicknesses and composition of the layers of the superlattice are determined on the basis of the SL minibands parameters calculated implying both full lattice matching of the SL as a whole to a GaAs substrate and high efficiency of photoexcited carriers transport along the growth axis. Photoluminescence studies of the transport properties of the structure (including a superlattice with one enlarged quantum well) show that the characteristic time of the diffusion of charge carriers at 300 K is shorter than the times defined by recombination processes. Such superlattices seem to be promising for the formation of a wide-gap photoactive region in a multijunction solar cell, which includes both III–V and II–VI compounds.

  1. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  2. Determining the exact number of dye molecules attached to colloidal CdSe/ZnS quantum dots in Frster resonant energy transfer assemblies

    SciTech Connect (OSTI)

    Kaiser, Uwe; Jimenez de Aberasturi, Dorleta; Vzquez-Gonzlez, Margarita; Carrillo-Carrion, Carolina; Niebling, Tobias; Parak, Wofgang J.; Heimbrodt, Wolfram

    2015-01-14

    Semiconductor quantum dots functionalized with organic dye molecules are important tools for biological sensor applications. Energy transfer between the quantum dot and the attached dyes can be utilized for sensing. Though important, the determination of the real number of dye molecules attached per quantum dot is rather difficult. In this work, a method will be presented to determine the number of ATTO-590 dye molecules attached to CdSe/ZnS quantum dots based on time resolved spectral analysis. The energy transfer from the excited quantum dot to the attached ATTO-590 dye leads to a reduced lifetime of the quantum dot's excitons. The higher the concentration of dye molecules, the shorter the excitonic lifetime becomes. However, the number of dye molecules attached per quantum dot will vary. Therefore, for correctly explaining the decay of the luminescence upon photoexcitation of the quantum dot, it is necessary to take into account the distribution of the number of dyes attached per quantum dot. A Poisson distribution of the ATTO-590 dye molecules not only leads to excellent agreement between experimental and theoretical decay curves but also additionally yields the average number of dye molecules attached per quantum dot. In this way, the number of dyes per quantum dot can be conveniently determined.

  3. Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young; Yang, Heesun

    2009-10-19

    In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

  4. Five new Zn(II) and Cd(II) coordination polymers constructed by 3,5-bis-oxyacetate-benzoic acid: Syntheses, crystal structures, network topologies and luminescent properties

    SciTech Connect (OSTI)

    Jiang Xianrong; Yuan Hongyan; Feng Yunlong

    2012-07-15

    Five Zn(II) and Cd(II) coordination polymers, [Zn{sub 2}(BOABA)(bpp)(OH)]{center_dot}0.5H{sub 2}O (1), [Cd{sub 3}(BOABA){sub 2}(bpp){sub 2}(H{sub 2}O){sub 6}]{center_dot}2H{sub 2}O (2), [Cd{sub 3}(BOABA){sub 2}(2,2 Prime -bipy){sub 3}(H{sub 2}O){sub 4}]{center_dot}5.5H{sub 2}O (3), [CdNa(BOABA)(H{sub 2}O)]{sub 2}{center_dot}H{sub 2}O (4) and [Cd{sub 2}(BOABA)(bimb)Cl(H{sub 2}O){sub 2}]{center_dot}H{sub 2}O (5) (H{sub 3}BOABA=3,5-bis-oxyacetate-benzoic acid, bpp=1,3-bi(4-pyridyl)propane, 2,2 Prime -bipy=2,2 Prime -bipyridine, bimb=1,4-bis(imidazol-1 Prime -yl)butane), have been solvothermally synthesized and characterized by single-crystal X-ray diffraction, elemental analyses, IR spectra and TG analyses. 1 is an uninodal 4-connected 2D square grid network based on binuclear zinc clusters. 2 is 2D wavelike layer structure and further linked by hydrogen bonds into the final 3D (5,6,6)-connected topology network. 3 is 3-connected 2D topology network and the 2,2 Prime -bipy ligands decorate in two different types. 4 is a (4,8)-connected 2D topology network with heterocaryotic {l_brace}Cd{sub 2}Na{sub 2}{r_brace} clusters and BOABA{sup 3-} ligands. 5 can be rationalized as a (3,10)-connected 3D topology network with tetranuclear {l_brace}Cd{sub 4}Cl{sub 2}{r_brace} clusters and BOABA{sup 3-} ligands. Meanwhile, photoluminescence studies revealed that these five coordination polymers display strong fluorescent emission bands in the solid state at room temperature. - Graphical abstract: Five new d{sup 10} metal(II) coordination polymers based on H{sub 3}BOABA ligand were obtained and characterized. They display different topological structures and luminescent properties. Highlights: Black-Right-Pointing-Pointer Five d{sup 10} metal(II) polymers based on 3,5-bis-oxyacetate-benzoic acid were obtained. Black-Right-Pointing-Pointer The polymers were structurally characterized by single-crystal X-ray diffraction. Black-Right-Pointing-Pointer Polymers 1-5 display different

  5. Synchrotron X-ray 2D and 3D Elemental Imaging of CdSe/ZnS Quantum dot Nanoparticles in Daphnia Magna

    SciTech Connect (OSTI)

    Jackson, B.; Pace, H; Lanzirotti, A; Smith, R; Ranville, J

    2009-01-01

    The potential toxicity of nanoparticles to aquatic organisms is of interest given that increased commercialization will inevitably lead to some instances of inadvertent environmental exposures. Cadmium selenide quantum dots (QDs) capped with zinc sulfide are used in the semiconductor industry and in cellular imaging. Their small size (<10 nm) suggests that they may be readily assimilated by exposed organisms. We exposed Daphnia magna to both red and green QDs and used synchrotron X-ray fluorescence to study the distribution of Zn and Se in the organism over a time period of 36 h. The QDs appeared to be confined to the gut, and there was no evidence of further assimilation into the organism. Zinc and Se fluorescence signals were highly correlated, suggesting that the QDs had not dissolved to any extent. There was no apparent difference between red or green QDs, i.e., there was no effect of QD size. 3D tomography confirmed that the QDs were exclusively in the gut area of the organism. It is possible that the QDs aggregated and were therefore too large to cross the gut wall.

  6. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    SciTech Connect (OSTI)

    Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hodges, D.; Hossain, A.; Lee, W.; Mahler, G.; Maritato, M.; Petryk, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B.

    2015-07-28

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  7. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hodges, D.; Hossain, A.; Lee, W.; et al

    2015-07-28

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics.more » The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

  8. Influence of irradiation with {gamma}-ray photons on the photoluminescence of Cd{sub 0.9}Zn{sub 0.1}Te crystals preliminarily subjected to the intense radiation of a neodymium laser

    SciTech Connect (OSTI)

    Glinchuk, K. D.; Medvid', A. P.; Mychko, A. M.; Naseka, Yu. M.; Prokhorovich, A. V.; Strilchuk, O. M.

    2013-04-15

    The effect of the preliminary treatment of Cd{sub 0.9}Zn{sub 0.1}Te crystals with high-power pulses of neodymium laser radiation (the power density is {<=}1.8 MW/cm{sup 2}, at a wavelength of 532 nm) on the low-temperature (5 K) photoluminescence induced by {gamma}-ray radiation (the dose was {Phi}{sub {gamma}} = 5 kGy) is studied. The luminescence bands are related to radiation-stimulated donor-acceptor pairs, which include shallow neutral donors and neutral cadmium vacancies stimulated by {gamma}-ray irradiation, the transition of free electrons to neutral cadmium vacancies formed by radiation, and the annihilation of excitons bound to the above vacancies. It is shown that, in the crystals preliminarily treated with laser radiation, the intensity of the {gamma}-ray-stimulated luminescence bands is significantly lower than in crystals not subjected to laser radiation. This fact is accounted for by a decrease in the concentration of cadmium vacancies generated by the {gamma}-ray radiation as a result of their annihilation during the course of their interaction with laser-stimulated defects, in particular, as a consequence of their recombination at laser-stimulated interstitial cadmium atoms.

  9. CD Templates

    Broader source: Energy.gov [DOE]

    EERE has developed templates for CD labels and CD packages. These can be used for all EERE products. Both templates are available as EPS files, which can be downloaded and edited in a graphics package like Adobe Illustrator.

  10. Electroluminescence of ZnO-based semiconductor heterostructures

    SciTech Connect (OSTI)

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  11. Electrodeposition of Zn based nanostructure thin films for photovoltaic applications

    SciTech Connect (OSTI)

    Al-Bathi, S. A. M.

    2015-03-30

    We present here a systematic study on the synthesis thin films of various ZnO, CdO, Zn{sub x}Cd{sub 1-x} (O) and ZnTe nanostructures by electrodeposition technique with ZnCl{sub 2,} CdCl{sub 2} and ZnSO{sub 4} solution as starting reactant. Several reaction parameters were examined to develop an optimal procedure for controlling the size, shape, and surface morphology of the nanostructure. The results showed that the morphology of the products can be carefully controlled through adjusting the concentration of the electrolyte. The products present well shaped Nanorods arrays at specific concentration and temperature. UV-VIS spectroscopy and X-ray diffraction results show that the product presents good crystallinity. A possible formation process has been proposed.

  12. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Wenyan; Zhang, Yu; Ruan, Cheng; Wang, Dan; Zhang, Tieqiang; Feng, Yi; Gao, Wenzhu; Yin, Jingzhi; Wang, Yiding; Riley, Alexis P.; et al

    2015-01-01

    The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to themore » low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.« less

  13. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

    SciTech Connect (OSTI)

    Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R. Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.

    2015-12-15

    The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

  14. Magneto-infrared study of electron-hole system in strained semimetallic HgTe quantum wells

    SciTech Connect (OSTI)

    Vasilyev, Yu. B.; Greshnov, A. A.; Mikhailov, N. N.; Suchalkin, S. D.; Tung, L.-C.; Smirnov, D.; Gouider, F.; Nachtwei, G.

    2013-12-04

    Magneto infrared absorption measurements have been performed on HgTe/CdHgTe quantum wells with different thicknesses grown on (013) GaAs substrate. Cyclotron resonance effective masses, inter-Landau-level transition energies and their dependence on magnetic field are measured. The measured intersubband energies are in good agreement with the theoretically calculated values. Strong spin-orbit interaction is responsible for cyclotron resonance splitting in asymmetric quantum wells. We demonstrate that the increase of the quantum well thickness leads to a semimetallic state, allowing for simultaneous observation of holes and electron transitions.

  15. Dipole Bands in {sup 196}Hg

    SciTech Connect (OSTI)

    Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D.; Msezane, B.; Benatar, M.; Mabala, G. K.; Mutshena, K. P.; Federke, M.; Mullins, S. M.; Ncapayi, N. J.; Vymers, P.

    2011-10-28

    High spin states in {sup 196}Hg have been populated in the {sup 198}Pt({alpha},6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

  16. Atmospheric mercury (Hg) in the Adirondacks: Concentrations and sources

    SciTech Connect (OSTI)

    Hyun-Deok Choi; Thomas M. Holsen; Philip K. Hopke

    2008-08-15

    Hourly averaged gaseous elemental Hg (GEM) concentrations and hourly integrated reactive gaseous Hg (RGM), and particulate Hg (HgP) concentrations in the ambient air were measured at Huntington Forest in the Adirondacks, New York from June 2006 to May 2007. The average concentrations of GEM, RGM, and HgP were 1.4 {+-} 0.4 ng m{sup -3}, 1.8 {+-} 2.2 pg m{sup -3}, and 3.2 {+-} 3.7 pg m{sup -3}, respectively. RGM represents <3.5% of total atmospheric Hg or total gaseous Hg (TGM: GEM + RGM) and HgP represents <3.0% of the total atmospheric Hg. The highest mean concentrations of GEM, RGM, and HgP were measured during winter and summer whereas the lowest mean concentrations were measured during spring and fall. Significant diurnal patterns were apparent in warm seasons for all species whereas diurnal patterns were weak in cold seasons. RGM was better correlated with ozone concentration and temperature in both warm than the other species. Potential source contribution function (PSCF) analysis was applied to identify possible Hg sources. This method identified areas in Pennsylvania, West Virginia, Ohio, Kentucky, Texas, Indiana, and Missouri, which coincided well with sources reported in a 2002 U.S. mercury emissions inventory. 51 refs., 7 figs., 1 tab.

  17. Process of [sup 196]Hg enrichment

    DOE Patents [OSTI]

    Grossman, M.W.; Mellor, C.E.

    1993-04-27

    A simple rate equation model shows that by increasing the length of the photochemical reactor and/or by increasing the photon intensity in said reactor, the feedstock utilization of [sup 196]Hg will be increased. Two preferred embodiments of the present invention are described, namely (1) long reactors using long photochemical lamps and vapor filters; and (2) quartz reactors with external UV reflecting films. These embodiments have each been constructed and operated, demonstrating the enhanced utilization process dictated by the mathematical model (also provided).

  18. Process of .sup.196 Hg enrichment

    DOE Patents [OSTI]

    Grossman, Mark W.; Mellor, Charles E.

    1993-01-01

    A simple rate equation model shows that by increasing the length of the photochemical reactor and/or by increasing the photon intensity in said reactor, the feedstock utilization of .sup.196 Hg will be increased. Two preferred embodiments of the present invention are described, namely (1) long reactors using long photochemical lamps and vapor filters; and (2) quartz reactors with external UV reflecting films. These embodiments have each been constructed and operated, demonstrating the enhanced utilization process dictated by the mathematical model (also provided).

  19. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  20. Evaluation of HgI[sub 2] detectors for lead detection in paint

    SciTech Connect (OSTI)

    Wang, Y.J.; Iwanczyk, J.S.; Graham, W.R. )

    1993-08-01

    The authors conducted a laboratory study of HgI[sub 2] spectrometers used for in-situ determination of lead on painted surfaces. [sup 109]Cd and [sup 57]Co isotopes have been used to excite lead characteristic x-rays from samples. The energy resolution of HgI[sub 2] detectors in the energy region corresponding to lead K x-rays has been measured. An energy resolution of 880 eV (FWHM) for the 60 keV line from an [sup 241]Am source has been obtained. Measurements using thin film standards ranging from 0.5 mg Pb/cm[sup 2] to 2 mg Pb/cm[sup 2] have been conducted. Detection limits, accuracy and precision of the measurements have been estimated. Based upon a comparison of the results that the authors have obtained with the performance of existing detector technology, the HgI[sub 2] detectors seem to be the best solution for handheld XRF lead analyzers.

  1. Lithography process for patterning HgI2 photonic devices

    DOE Patents [OSTI]

    Mescher, Mark J.; James, Ralph B.; Hermon, Haim

    2004-11-23

    A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

  2. Atom-probe tomographic study of interfaces of Cu{sub 2}ZnSnS{sub 4} photovoltaic cells

    SciTech Connect (OSTI)

    Tajima, S. Asahi, R.; Itoh, T.; Hasegawa, M.; Ohishi, K.; Isheim, D.; Seidman, D. N.

    2014-09-01

    The heterophase interfaces between the CdS buffer layer and the Cu{sub 2}ZnSnS{sub 4} (CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573 K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

  3. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    SciTech Connect (OSTI)

    Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UVvisible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by JV curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ?3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ? ZnS layers were deposited with two different ways. ? The way of SILAR is more beneficial for retarding the back transfer of electrons. ? The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  4. Hg Anomalies In Soils- A Geochemical Exploration Method For Geothermal...

    Open Energy Info (EERE)

    is not possible. Hg anomaly patterns yield information on the presence as well as the geometry of shallow geothermal circulation patterns. In conjunction with structural geologic...

  5. Photocatalytic reduction of aqueous mercury(II) using multi-walled carbon nanotubes/Pd-ZnO nanocomposite

    SciTech Connect (OSTI)

    Mohamed, R.M.; Abdel Salam, Mohamed

    2014-02-01

    Highlights: MWCNT/Pd-ZnO were used for photocatalytic reduction of Hg{sup 2+}. Photocatalytic reduction of Hg{sup 2+} was dependent on wt% of MWCNT, reaction time, and weight of catalyst. Catalyst re-use revealed the present photocatalyst remain effective and active after five, cycles. - Abstract: Pd-ZnO nanocatalyst supported on multi-walled carbon nanotubes was successfully synthesized via a modified solgel method, and the prepared photocatalyst was used for the environmental remediation of aqueous Hg(II) via photocatalytic reduction under visible light. The prepared MWCNTs/Pd/ZnO nanocomposite photocatalyst was characterized using X-ray diffraction, BrunauerEmmettTeller (BET), transmission electron microscopy, and UVvis spectra (UVvis). The results showed that both Pd and ZnO nanoparticles were well dispersed over the MWCNTs, and a uniform nanocomposite was formed. The results also illustrated that Pd doping can eliminate the recombination of electron-hole pairs in the catalyst, and the presence of MWCNTs in ZnO composite can change surface properties to achieve sensitivity to visible light. The results demonstrated that optimum mass ratio of CNT:ZnO:Pd were 0.04:1.0:0.08, which resulted in the exceptional performance of the photocatalyst to reduce about 100% of Hg(II) in a 100 mg L solution within 30 min.

  6. Polarized Raman scattering of single ZnO nanorod

    SciTech Connect (OSTI)

    Yu, J. L. Lai, Y. F. Wang, Y. Z.; Cheng, S. Y.

    2014-01-21

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup high} in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A{sub 1}(TO) and E{sub 1}(TO) phonon modes normalized to that of the E{sub 2}{sup high} phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer.

  7. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect (OSTI)

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  8. NNMCAB Correspondence 2013-01 (Hg SEIS) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1 (Hg SEIS) NNMCAB Correspondence 2013-01 (Hg SEIS) The NNMCAB submitted comments on the mercury SEIS on June 13, 2013. The comments were provided to the Department of Energy in regards to proposed sites for interim storage of excess mercury. Correspondence 2013-01 - Mercury SEIS - June 13, 2013 (34.7 KB)

  9. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect (OSTI)

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  10. Materials Data on CdHg2 (SG:139) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  11. Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells

    SciTech Connect (OSTI)

    Bovkun, L. S. Krishtopenko, S. S.; Zholudev, M. S.; Ikonnikov, A. V.; Spirin, K. E.; Dvoretsky, S. A.; Mikhailov, N. N.; Teppe, F.; Knap, W.; Gavrilenko, V. I.

    2015-12-15

    The exchange enhancement of the electron g-factor in perpendicular magnetic fields to 12 T in HgTe/CdHgTe quantum wells 20 nm wide with a semimetal band structure is studied. The electron effective mass and g-factor at the Fermi level are determined by analyzing the temperature dependence of the amplitude of Shubnikov–de Haas oscillation in weak fields and near odd Landau-level filling factors ν ≤ 9. The experimental values are compared with theoretical calculations performed in the one-electron approximation using the eight-band kp Hamiltonian. The found dependence of g-factor enhancement on the electron concentration is explained by changes in the contributions of hole- and electron-like states to exchange corrections to the Landau-level energies in the conduction band.

  12. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  13. Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Jin; He, Chaoyu; Meng, Lijun; Xiao, Huaping; Tang, Chao; Wei, Xiaolin; Kim, Jinwoong; Kioussis, Nicholas; Stocks, G. Malcolm; Zhong, Jianxin

    2015-09-14

    Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

  14. Purification of HgI.sub.2 for nuclear detector fabrication

    DOE Patents [OSTI]

    Schieber, Michael M.

    1978-01-01

    A process for purification of mercuric iodide (HgI.sub.2) to be used as a source material for the growth of detector quality crystals. The high purity HgI.sub.2 raw material is produced by a combination of three stages: synthesis of HgI.sub.2 from Hg and I.sub.2, repeated sublimation, and zone refining.

  15. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications

    SciTech Connect (OSTI)

    Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos,A. Paul

    2007-05-01

    Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.

  16. Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

    SciTech Connect (OSTI)

    Lohmeyer, H.; Kruse, C.; Sebald, K.; Gutowski, J.; Hommel, D.

    2006-08-28

    The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.

  17. On-line method of determining utilization factor in Hg-196 photochemical separation process

    DOE Patents [OSTI]

    Grossman, Mark W.; Moskowitz, Philip E.

    1992-01-01

    The present invention is directed to a method for determining the utilization factor [U] in a photochemical mercury enrichment process (.sup.196 Hg) by measuring relative .sup.196 Hg densities using absorption spectroscopy.

  18. NNMCAB Correspondence 2013-05 (Response Hg SEIS) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5 (Response Hg SEIS) NNMCAB Correspondence 2013-05 (Response Hg SEIS) Response to NNMCAB Correspondence 2013-01. DOE provided comment responses on the Mercury Supplemental Environmental Impact Statement comments that were submitted by the NNMCAB. Correspondence 2013-05 - Response Hg Letter (713.92

  19. Elastic and surface energies: Two key parameters for CdSe quantum dot formation

    SciTech Connect (OSTI)

    Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge

    2006-06-05

    The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

  20. Manila clams from Hg polluted sediments of Marano and Grado lagoons (Italy) harbor detoxifying Hg resistant bacteria in soft tissues

    SciTech Connect (OSTI)

    Baldi, Franco; Gallo, Michele; Marchetto, Davide; Faleri, Claudia; Maida, Isabel; Fani, Renato

    2013-08-15

    A mechanism of mercury detoxification has been suggested by a previous study on Hg bioaccumulation in Manila clams (Ruditapes philippinarum) in the polluted Marano and Grado lagoons and in this study we demonstrate that this event could be partly related to the detoxifying activities of Hg-resistant bacteria (MRB) harbored in clam soft tissues. Therefore, natural clams were collected in six stations during two different periods (winter and spring) from Marano and Grado Lagoons. Siphons, gills and hepatopancreas from acclimatized clams were sterile dissected to isolate MRB. These anatomical parts were glass homogenized or used for whole, and they were lying on a solid medium containing 5 mg l{sup −1} HgCl{sub 2} and incubated at 30 °C. A total of fourteen bacterial strains were isolated and were identified by 16S rDNA sequencing and analysis, revealing that strains were representative of eight bacterial genera, four of which were Gram-positive (Enterococcus, Bacillus, Jeotgalicoccus and Staphylococcus) and other four were Gram-negative (Stenotrophomonas, Vibrio, Raoultella and Enterobacter). Plasmids and merA genes were found and their sequences determined. Fluorescence in situ hybridization (FISH) technique shows the presence of Firmicutes, Actinobacteria and Gammaproteobacteria by using different molecular probes in siphon and gills. Bacterial clumps inside clam flesh were observed and even a Gram-negative endosymbiont was disclosed by transmission electronic microscope inside clam cells. Bacteria harbored in cavities of soft tissue have mercury detoxifying activity. This feature was confirmed by the determination of mercuric reductase in glass-homogenized siphons and gills. -- Highlights: ► We isolated Gram-positive and Gram-negative Hg resistant strains from soft tissues of Ruditapes philippinarum. ► We identify 14 mercury resistant strains by 16S rRNA gene sequences. ► Bacteria in siphon and gill tissues of clams were observed by TEM and identified

  1. Synthesis and growth of HgI{sub 2} nanocrystals in a glass matrix: Heat treatment

    SciTech Connect (OSTI)

    Condeles, J. F. E-mail: ricssilva@yahoo.com.br; Silva, R. S. E-mail: ricssilva@yahoo.com.br; Silva, A. C. A.; Dantas, N. O.

    2014-08-14

    Mercury iodide (HgI{sub 2}) nanocrystals (NCs) were successfully grown in a barium phosphate glass matrix synthesized by fusion. Growth control of HgI{sub 2} NCs was investigated by Atomic Force Microscopy (AFM), Optical Absorption (OA), Fluorescence (FL), and X-ray diffraction (XRD). AFM images reveal the formation of HgI{sub 2} nanocrystals in host glass matrix. HgI{sub 2} NCs growth was evidenced by an OA and FL band red-shift with increasing annealing time. XRD measurements revealed the β crystalline phase of the HgI{sub 2} nanocrystals.

  2. Electrochemical solar cells using CdSe thin film electrodes

    SciTech Connect (OSTI)

    Xiao, Xu-Rui; Tien, H.Ti.

    1983-01-01

    Electrochemical photocells consisting of a CdSe thin film anode and a Pt cathode immersed in 1M Na/sub 2/S-NaOH-S solution have been studied. CdSe thin films were formed on Ti, Cr, Mo, SnO/sub 2/, glassy carbon, and graphite substrates by coating an aqueous mixture of CdSe, ZnCl/sub 2/, and surfactant, subsequently sintering at 400/sup 0/-500/sup 0/C in air. The current-voltage (I-V) relations, output power efficiency, open-circuit voltage, and short-circuit current were measured. Seven percent power conversion efficiency was obtained at 20 mW/cm/sup 2/ light intensity after photoetching. The monochromatic I-V curves were analyzed.

  3. Apparatus for growing HgI.sub.2 crystals

    DOE Patents [OSTI]

    Schieber, Michael M.; Beinglass, Israel; Dishon, Giora

    1978-01-01

    A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

  4. SrAgZn and EuAgZn with KHg{sub 2}-type structure—Structure, magnetic properties, and {sup 151}Eu Mössbauer spectroscopy

    SciTech Connect (OSTI)

    Gerke, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver; Pöttgen, Rainer

    2013-07-15

    Samples of SrAgZn and EuAgZn were synthesized by reaction of the elements in sealed tantalum crucibles. Both structures were refined on the basis of single crystal X-ray diffractometer data: KHg{sub 2}-type, Imma, a=476.7(1), b=780.9(2), c=810.1(2) pm, R{sub 1}/wR{sub 2}=0.0189/0.0119, 381 F² values for SrAg{sub 1.12}Zn{sub 0.88} and a=474.43(9), b=760.8(2), c=799.0(2) pm, R{sub 1}/wR{sub 2}=0.0226/0.0483, 370 F² values for EuAg{sub 1.17}Zn{sub 0.83} with 13 variables per refinement. Silver and zinc are randomly distributed on the Hg position and build up three-dimensional networks. EuAgZn shows ferromagnetic ordering at 29(1) K. In the temperature range from 75 to 300 K the sample shows Curie–Weiss behaviour with μ{sub eff}=7.87(1) μ{sub B}/Eu atom and θ{sub P}=37.1(1) K, indicating divalent europium. {sup 151}Eu Mössbauer spectroscopic measurements confirmed the divalent state with an isomer shift of −9.31 mm/s at 78 K. Temperature dependent {sup 151}Eu data show first magnetic hyperfine field splitting at 25 K and a saturated magnetization of 17 T at 5.2 K. The temperature dependence can be described by an S=7/2 Brillouin function. - Graphical abstract: The near neighbor coordination of the strontium and europium atoms in SrAg{sub 1.12}Zn{sub 0.88}, EuAg{sub 1.17}Zn{sub 0.83}, and EuAuZn. - Highlights: • Synthesis of new intermetallic zinc compounds SrAgZn and EuAgZn. • Ferromagnetic ordering of EuAgZn at 29 K. • Magnetic hyperfine field splitting in the {sup 151}Eu Mössbauer spectrum.

  5. Improved Limit on the Permanent Electric Dipole Moment of {sup 199}Hg

    SciTech Connect (OSTI)

    Griffith, W. C.; Swallows, M. D.; Loftus, T. H.; Romalis, M. V.; Heckel, B. R.; Fortson, E. N.

    2009-03-13

    We report the results of a new experimental search for a permanent electric dipole moment of {sup 199}Hg utilizing a stack of four vapor cells. We find d({sup 199}Hg)=(0.49{+-}1.29{sub stat}{+-}0.76{sub syst})x10{sup -29} e cm, and interpret this as a new upper bound, |d({sup 199}Hg)|<3.1x10{sup -29} e cm (95% C.L.). This result improves our previous {sup 199}Hg limit by a factor of 7, and can be used to set new constraints on CP violation in physics beyond the standard model.

  6. Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys

    SciTech Connect (OSTI)

    Li, Keyan; Kang, Congying [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)] [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Xue, Dongfeng, E-mail: dongfeng@ciac.jl.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China) [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-10-15

    In this work, the bulk moduli and band gaps of M{sub x}Zn{sub 1?x}O (M = Be, Mg, Ca, Cd) alloys in the whole composition range were quantitatively calculated by using the electronegativity-related models for bulk modulus and band gap, respectively. We found that the change trends of bulk modulus and band gap with an increase of M concentration x are same for Be{sub x}Zn{sub 1?x}O and Cd{sub x}Zn{sub 1?x}O, while the change trends are reverse for Mg{sub x}Zn{sub 1?x}O and Ca{sub x}Zn{sub 1?x}O. It was revealed that the bulk modulus is related to the valence electron density of atoms whereas the band gap is strongly influenced by the detailed chemical bonding behaviors of constituent atoms. The current work provides us a useful guide to compositionally design advanced alloy materials with both good mechanical and optoelectronic properties.

  7. Nested reactor chamber and operation for Hg-196 isotope separation process

    DOE Patents [OSTI]

    Grossman, Mark W.

    1991-01-01

    The present invention is directed to an apparatus for use in .sup.196 Hg separation and its method of operation. Specifically, the present invention is directed to a nested reactor chamber useful for .sup.196 Hg isotope separation reactions avoiding the photon starved condition commonly encountered in coaxial reactor systems.

  8. Nested reactor chamber and operation for Hg-196 isotope separation process

    DOE Patents [OSTI]

    Grossman, M.W.

    1991-10-08

    The present invention is directed to an apparatus for use in [sup 196]Hg separation and its method of operation. Specifically, the present invention is directed to a nested reactor chamber useful for [sup 196]Hg isotope separation reactions avoiding the photon starved condition commonly encountered in coaxial reactor systems. 6 figures.

  9. Effect of ZnO facet on ethanol steam reforming over Co/ZnO (Journal...

    Office of Scientific and Technical Information (OSTI)

    Effect of ZnO facet on ethanol steam reforming over CoZnO Citation Details In-Document Search Title: Effect of ZnO facet on ethanol steam reforming over CoZnO The effects of ZnO ...

  10. Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

    SciTech Connect (OSTI)

    Song, W.; Mao, D.; Kaydanov, V.; Ohno, T.R.; Trefny, J.V.; Levi, D.H.; Johnston, S. McCandless, B.E.

    1999-03-01

    We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films. Cell performance is improved with the increase of the amount of S in the CdTe films. S diffusion into CdTe also deteriorates the uniformity of the CdS window layers, resulting in worse cell performance. Based on this study, we propose a processing method to improve cell performance. {copyright} {ital 1999 American Institute of Physics.}

  11. Effects of H{sub 2}O, SO{sub 2}, and NO on homogeneous Hg oxidation...

    Office of Scientific and Technical Information (OSTI)

    Effects of Hsub 2O, SOsub 2, and NO on homogeneous Hg oxidation by Clsub 2 Citation Details In-Document Search Title: Effects of Hsub 2O, SOsub 2, and NO on homogeneous Hg ...

  12. Examining Mechanisms of Groundwater Hg(II) Treatment by Reactive Materials: An EXAFS Study

    SciTech Connect (OSTI)

    Gibson, Blair D.; Ptacek, Carol J.; Lindsay, Matthew B.J.; Blowes, David W.

    2012-02-07

    Laboratory batch experiments were conducted to examine mechanisms of Hg(II) removal by reactive materials proposed for groundwater treatment. These materials included granular iron filings (GIF), 1:1 (w/w) mixtures of metallurgical granular Fe powder + elemental S (MGI+S) and elemental Cu + elemental S (Cu+S), granular activated carbon (GAC), attapulgite clay (ATP), ATP treated with 2-amino-5-thiol-1,3,4-thiadiazole (ATP-a), and ATP treated with 2,5-dimercapto-1,3,4-thiadiazole (ATP-d). Following treatment of simulated groundwater containing 4 mg L{sup -1} Hg for 8 or 16 days, the solution pH values ranged from 6.8 to 8.8 and Eh values ranged from +400 to -400 mV. Large decreases in aqueous Hg concentrations were observed for ATP-d (>99%), GIF (95%), MGI+S (94%), and Cu+S (90%). Treatment of Hg was less effective using ATP (29%), ATP-a (69%), and GAC (78%). Extended X-ray absorption fine structure (EXAFS) spectra of Hg on GIF, MGI+S, and GAC indicated the presence of an Hg-O bond at 2.04-2.07 {angstrom}, suggesting that Hg was bound to GIF corrosion products or to oxygen complexes associated with water sorbed to activated carbon. In contrast, bond lengths ranging from 2.35 to 2.48 {angstrom} were observed for Hg in Cu+S, ATP-a, and ATP-d treatments, suggesting the formation of Hg-S bonds.

  13. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  14. Heterojunctions of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  15. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  16. Results of Hg speciation testing on tanks 30, 32, and 37 surface samples

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2015-11-11

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team.

  17. Shape coexistence in {sup 180}Hg studied through the {beta} decay of {sup 180}Tl

    SciTech Connect (OSTI)

    Elseviers, J.; Bree, N.; Diriken, J.; Huyse, M.; Ivanov, O.; Van den Bergh, P.; Van Duppen, P.; Andreyev, A. N.; Antalic, S.; Barzakh, A.; Fedorov, D.; Cocolios, T. E.; Seliverstov, M.; Comas, V. F.; Heredia, J. A.; Fedosseyev, V. N.; Marsh, B. A.; Franchoo, S.; Page, R. D.

    2011-09-15

    The {beta}{sup +}/EC decay of {sup 180}Tl and excited states in the daughter nucleus {sup 180}Hg have been investigated at the CERN On-Line Isotope Mass Separator (ISOLDE) facility. Many new low-lying energy levels were observed in {sup 180}Hg, of which the most significant are the 0{sub 2}{sup +} at 419.6 keV and the 2{sub 2}{sup +} at 601.3 keV. The former is the bandhead of an excited band in {sup 180}Hg assumed originally to be of prolate nature. From the {beta} feeding to the different states in {sup 180}Hg, the ground-state spin of {sup 180}Tl was deduced to be (4{sup -},5{sup -}).

  18. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect (OSTI)

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  19. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect (OSTI)

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  20. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect (OSTI)

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D.; Garner, S.

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  1. CdWO{sub 4} polymorphs: Selective preparation, electronic structures, and photocatalytic activities

    SciTech Connect (OSTI)

    Yan, Tingjiang; Li, Liping; Tong, Wenming; Zheng, Jing; Wang, Yunjian; Li, Guangshe

    2011-02-15

    This work explored the selective synthesis of polymorphs of CdWO{sub 4} in either tetragonal or monoclinic phase by optimizing the experimental parameters. Systematic characterization indicated that both polymorphs possessed similar spherical morphologies but different structural building blocks. Electronic structures calculations for both polymorphs demonstrated the same constructions of conduction band or valence band, while the conduction band widths of both polymorphs were quite different. Both CdWO{sub 4} polymorphs exhibited good photocatalytic activity for degradation of methyl orange under UV light irradiation. When comparing to some other well-known tungstate oxide materials, the photocatalytic activity was found to follow such a consequence, monoclinic CdWO{sub 4{approx}}monoclinic ZnWO{sub 4}>tetragonal CdWO{sub 4}>tetragonal CaWO{sub 4}. The specific photocatalytic activity of monoclinic CdWO{sub 4} was even higher than that of commercial TiO{sub 2} photocatalyst (Degussa P25). The increased activity from the tetragonal CdWO{sub 4} to the monoclinic was consistent with the trend of the decreased symmetry, and this could be explained in terms of the geometric structures and electronic structures for both polymorphs. -- Graphical abstract: Monoclinic CdWO{sub 4} exhibited a much higher photocatalytic activity than the tetragonal form owing to the lower symmetry, more distorted geometric structure, and the dispersive band configuration. Display Omitted Research highlights: > Polymorphs of CdWO{sub 4} in either tetragonal or monoclinic phase were selectively synthesized. > Both polymorphs possessed similar spherical morphologies, while the relevant structural building blocks were different. > Photocatalytic activities of CdWO{sub 4} polymorphs depended strongly on the symmetry, geometric structure, as well as band configuration.

  2. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22475756 Resource Type: Journal Article Resource Relation: Journal Name: Materials Research Bulletin; Journal Volume: 65; Other Information: Copyright (c) 2015 ...

  3. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect (OSTI)

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  4. In-beam conversion-electron spectroscopy of {sup 180}Hg

    SciTech Connect (OSTI)

    Page, R. D.; Wiseman, D. R.; Butler, P. A.; Herzberg, R.-D.; Jones, G. D.; Joss, D. T.; Keenan, A.; Rainovski, G. I.; Andreyev, A. N.; Grahn, T.; Greenlees, P. T.; Jones, P. M.; Julin, R.; Juutinen, S.; Kankaanpaeae, H.; Kettunen, H.; Kuusiniemi, P.; Leino, M.; Muikku, M.; Nieminen, P.

    2011-09-15

    Excited states in {sup 180}Hg were populated using the {sup 147}Sm({sup 36}Ar,3n){sup 180}Hg reaction and studied by in-beam conversion-electron spectroscopy. Conversion electrons emitted at the target position were measured using the Silicon Array for Conversion Electron Detection (SACRED) spectrometer and tagged through the characteristic {alpha} decays of {sup 180}Hg detected in a position-sensitive silicon strip detector located at the focal plane of the gas-filled recoil separator Recoil Ion Transport Unit (RITU). Electron conversion of transitions previously assigned to {sup 180}Hg through in-beam {gamma}-ray spectroscopy studies was identified up to the 10{sup +}{yields}8{sup +} transition and the intensities of the conversion-electron transitions were found to be consistent with the previous multipolarity assignments. Evidence was also found for two highly converted transitions in {sup 180}Hg: a 167 keV transition is interpreted as the transition from the newly identified 2{sub 2}{sup +} state at 601 keV to the 2{sub 1}{sup +} state at 434 keV, while a 420 keV transition is assigned as the E0 decay from the 0{sup +} bandhead of the prolate-deformed configuration to the weakly deformed ground state.

  5. Preparation of new morphological ZnO and Ce-doped ZnO

    SciTech Connect (OSTI)

    Chelouche, A.; Djouadi, D.; Aksas, A.

    2013-12-16

    ZnO micro-tori and cerium doped hexangulars ZnO have been prepared by the sol-gel method under methanol hypercritical conditions of temperature and pressure. X-ray diffraction (XRD) measurement has revealed the high crystalline quality and the nanometric size of the samples. Scanning electron microscopy (SEM) has shown that the ZnO powder has a torus-like shape while that of ZnO:Ce has a hexangular-like shape, either standing free or inserted into the cores of ZnO tori. Transmission electron microscopy (TEM) has revealed that the ZnO particles have sizes between 25 and 30 nm while Ce-doped ZnO grains have diameters ranging from 75 nm to 100 nm. Photoluminescence spectra at room temperature of the samples have revealed that the introduction of cerium in ZnO reduces the emission intensity lines, particularly the ZnO red and green ones.

  6. The new Hg-rich barium indium mercurides BaIn{sub x}Hg{sub 7−x} (x=3.1) and BaIn{sub x}Hg{sub 11−x} (x=0–2.8)

    SciTech Connect (OSTI)

    Wendorff, Marco; Schwarz, Michael; Röhr, Caroline

    2013-07-15

    The title compounds BaIn{sub x}Hg{sub 7−x} (x=3.1(1)) and BaIn{sub x}Hg{sub 11−x} (x=0–2.8) were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures have been determined using single crystal X-ray data. BaIn{sub x}Hg{sub 7−x} (x=3.1(1)) crystallizes in a new structure type (orthorhombic, oC16, space group Cmmm: a=512.02(1), b=1227.68(3), c=668.61(2) pm, Z=2, R1=0.0311). In the structure, the atoms of the three crystallographically different mixed In/Hg positions form planar nets of four-, six- and eight-membered rings. These nets are shifted against each other such that the four-membered rings form empty distorted cubes. The cubes are connected via common edges, corners and folded ladders, which are also found in BaIn{sub 2}/BaHg{sub 2} (KHg{sub 2} structure type) and BaIn (α-NaHg type). The Ba atoms are centered in the eight-membered rings and exhibit an overall coordination number of 20. The [BaM{sub 20}] polyhedra and twice as many distorted [M{sub 8}] cubes tesselate the space. BaIn{sub 2.8}Hg{sub 8.2} (cubic, cP36, space group Pm3{sup ¯}m, a=961.83(1) pm, Z=3, R1=0.0243) is the border compound of the phase width BaIn{sub x}Hg{sub 11−x} of the rare BaHg{sub 11} structure type. In the structure, ideal [M{sub 8}] cubes (at the corners of the unit cell) and BaM{sub 20} polyhedra (at the edges of the unit cell) represent the building blocks comparable to the other new In mercuride. In accordance with the increased In/Hg content, additional M-pure regions appear: the center of the unit cell contains a huge [Hg(1)M(2){sub 12}M(3,4){sub 32}] polyhedron, a Hg-centered cuboctahedron of In/Hg atoms surrounded by a capped cantellated cube of 32 additional M atoms. For both structure types, the bonding situation and the ‘coloring’, i.e. the In/Hg distribution of the polyanionic network, are discussed considering the different sizes of the atoms and the charge distribution (Bader AIM charges), which have been

  7. Manifold and method of batch measurement of Hg-196 concentration using a mass spectrometer

    DOE Patents [OSTI]

    Grossman, M.W.; Evans, R.

    1991-11-26

    A sample manifold and method of its use has been developed so that milligram quantities of mercury can be analyzed mass spectroscopically to determine the [sup 196]Hg concentration to less than 0.02 atomic percent. Using natural mercury as a standard, accuracy of [+-]0.002 atomic percent can be obtained. The mass spectrometer preferably used is a commercially available GC/MS manufactured by Hewlett Packard. A novel sample manifold is contained within an oven allowing flow rate control of Hg into the MS. Another part of the manifold connects to an auxiliary pumping system which facilitates rapid clean up of residual Hg in the manifold. Sample cycle time is about 1 hour. 8 figures.

  8. Manifold and method of batch measurement of Hg-196 concentration using a mass spectrometer

    DOE Patents [OSTI]

    Grossman, Mark W.; Evans, Roger

    1991-01-01

    A sample manifold and method of its use has been developed so that milligram quantities of mercury can be analyzed mass spectroscopically to determine the .sup.196 Hg concentration to less than 0.02 atomic percent. Using natural mercury as a standard, accuracy of .+-.0.002 atomic percent can be obtained. The mass spectrometer preferably used is a commercially available GC/MS manufactured by Hewlett Packard. A novel sample manifold is contained within an oven allowing flow rate control of Hg into the MS. Another part of the manifold connects to an auxiliary pumping system which facilitates rapid clean up of residual Hg in the manifold. Sample cycle time is about 1 hour.

  9. H.G. Rickover, 1964 | U.S. DOE Office of Science (SC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    H.G. Rickover, 1964 The Enrico Fermi Award Fermi Award Home Nomination & Selection Guidelines Award Laureates 2010's 2000's 1990's 1980's 1970's 1960's 1950's Ceremony The Life of Enrico Fermi Contact Information The Enrico Fermi Award U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-2411 E: Email Us 1960's H.G. Rickover, 1964 Print Text Size: A A A FeedbackShare Page Citation For engineering and demonstrative leadership in the

  10. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect (OSTI)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  11. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  12. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  13. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  14. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    SciTech Connect (OSTI)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L.

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  15. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; et al

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-raymore » detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).« less

  16. Piezoelectric and luminescent properties of ZnO nanostructures...

    Office of Scientific and Technical Information (OSTI)

    Conference: Piezoelectric and luminescent properties of ZnO nanostructures on Ag films. Citation Details In-Document Search Title: Piezoelectric and luminescent properties of ZnO ...

  17. CD DVD Retrieval | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CD DVD Retrieval Publications KMD Contacts Project Summaries EPAct 2005 Arctic Energy Office Announcements Software Stripper Wells The user can download the complete CD/DVD via zip files, or if applicable use the interactive webpages to review the content online. Users can also request mailed copies of the media using the NETL CD-DVD ordering system. CD Image Title: Naturally Fracture Reservoir Simulator: FRACGEN & NFFLOW Info: The DOE sponsored a project to simulate the behavior of tight,

  18. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect (OSTI)

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06

    colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  19. Axi-symmetrical flow reactor for [sup 196]Hg photochemical enrichment

    DOE Patents [OSTI]

    Grossman, M.W.

    1991-04-30

    The present invention is directed to an improved photochemical reactor useful for the isotopic enrichment of a predetermined isotope of mercury, especially, [sup 196]Hg. Specifically, two axi-symmetrical flow reactors were constructed according to the teachings of the present invention. These reactors improve the mixing of the reactants during the photochemical enrichment process, affording higher yields of the desired [sup 196]Hg product. Measurements of the variation of yield (Y) and enrichment factor (E) along the flow axis of these reactors indicates very substantial improvement in process uniformity compared to previously used photochemical reactor systems. In one preferred embodiment of the present invention, the photoreactor system was built such that the reactor chamber was removable from the system without disturbing the location of either the photochemical lamp or the filter employed therewith. 10 figures.

  20. Axi-symmetrical flow reactor for .sup.196 Hg photochemical enrichment

    DOE Patents [OSTI]

    Grossman, Mark W.

    1991-01-01

    The present invention is directed to an improved photochemical reactor useful for the isotopic enrichment of a predetermined isotope of mercury, especially, .sup.196 Hg. Specifically, two axi-symmetrical flow reactors were constructed according to the teachings of the present invention. These reactors improve the mixing of the reactants during the photochemical enrichment process, affording higher yields of the desired .sup.196 Hg product. Measurements of the variation of yield (Y) and enrichment factor (E) along the flow axis of these reactors indicates very substantial improvement in process uniformity compared to previously used photochemical reactor systems. In one preferred embodiment of the present invention, the photoreactor system was built such that the reactor chamber was removable from the system without disturbing the location of either the photochemical lamp or the filter employed therewith.

  1. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots

    SciTech Connect (OSTI)

    Guyot-Sionnest, Philippe Roberts, John Andris

    2015-12-21

    The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3–5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10} Jones and microseconds response times are obtained at 140 K. The cooled devices detect the ambient thermal radiation. A detector with 5.25 μm cut-off achieves Background Limited Infrared Photodetection at 90 K.

  2. Automated product recovery in a Hg-196 photochemical isotope separation process

    DOE Patents [OSTI]

    Grossman, M.W.; Speer, R.

    1992-07-21

    A method of removing deposited product from a photochemical reactor used in the enrichment of [sup 196]Hg has been developed and shown to be effective for rapid re-cycling of the reactor system. Unlike previous methods relatively low temperatures are used in a gas and vapor phase process of removal. Importantly, the recovery process is understood in a quantitative manner so that scaling design to larger capacity systems can be easily carried out. 2 figs.

  3. Automated product recovery in a HG-196 photochemical isotope separation process

    DOE Patents [OSTI]

    Grossman, Mark W.; Speer, Richard

    1992-01-01

    A method of removing deposited product from a photochemical reactor used in the enrichment of .sup.196 Hg has been developed and shown to be effective for rapid re-cycling of the reactor system. Unlike previous methods relatively low temperatures are used in a gas and vapor phase process of removal. Importantly, the recovery process is understood in a quantitative manner so that scaling design to larger capacity systems can be easily carried out.

  4. Synthesis, crystal structures, and physical properties of the new Zintl phases A{sub 21}Zn{sub 4}Pn{sub 18} (A=Ca, Eu; Pn=As, Sb)—Versatile arrangements of [ZnPn{sub 4}] tetrahedra

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Wang, Yi; Bobev, Svilen

    2015-07-15

    Four new Zintl phases, Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18} and Eu{sub 21}Zn{sub 4}Sb{sub 18} have been synthesized by metal flux reactions. Their structures have been established from single-crystal X-ray diffraction. Despite the similar chemical makeup and the identical formulae, the structures of the four compounds are not the same—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18} and Eu{sub 21}Zn{sub 4}As{sub 18} crystallize in the monoclinic space group C2/m (No. 12, Z=4) with the β-Ca{sub 21}Mn{sub 4}Sb{sub 18} structure type, while Eu{sub 21}Zn{sub 4}Sb{sub 18} adopts the Ba{sub 21}Cd{sub 4}Sb{sub 18} structure type with the orthorhombic space group Cmce (No. 64, Z=8). Both structures are based on ZnAs{sub 4} or ZnSb{sub 4} tetrahedra, linked in slightly different ways, and Ca{sup 2+} and Eu{sup 2+} cations that fill the space between them. The structural relationships between the title compounds and other known ternary phases with intricate structures are discussed. Electrical resistivity measurement on single-crystalline Eu{sub 21}Zn{sub 4}Sb{sub 18} suggests an intrinsic semiconductor behavior with a band gap of ca. 0.2 eV. The temperature dependent DC magnetization measurement on the same material indicates Curie–Weiss paramagnetism in the high-temperature regime, and a spontaneous antiferromagnetic ordering below 8 K. The calculated effective moments of Eu confirm the divalent Eu{sup 2+} ground state, as expected from the Zintl–Klemm concept. - Graphical abstract: The four new Zintl phases—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18}—crystallize in two structure types, showing the versatility in the arrangements of ZnAs{sub 4} and ZnSb{sub 4} tetrahedra. - Highlights: • Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18

  5. Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for...

    Office of Scientific and Technical Information (OSTI)

    for Nuclear Spectrometers High-quality, large (10 cm long and 2.5 cm diameter), ... properties, electron and hole mobility-life-time product, mutausub e approx ...

  6. Materials Data on ZnCdPt2 (SG:123) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  7. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma...

    Office of Scientific and Technical Information (OSTI)

    In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with ...

  8. Homogeneous and Heterogeneous Reaction and Transformation of Hg and Trace Metals in Combustion Systems

    SciTech Connect (OSTI)

    J. Helble; Clara Smith; David Miller

    2009-08-31

    The overall goal of this project was to produce a working dynamic model to predict the transformation and partitioning of trace metals resulting from combustion of a broad range of fuels. The information provided from this model will be instrumental in efforts to identify fuels and conditions that can be varied to reduce metal emissions. Through the course of this project, it was determined that mercury (Hg) and arsenic (As) would be the focus of the experimental investigation. Experiments were therefore conducted to examine homogeneous and heterogeneous mercury oxidation pathways, and to assess potential interactions between arsenic and calcium. As described in this report, results indicated that the role of SO{sub 2} on Hg oxidation was complex and depended upon overall gas phase chemistry, that iron oxide (hematite) particles contributed directly to heterogeneous Hg oxidation, and that As-Ca interactions occurred through both gas-solid and within-char reaction pathways. Modeling based on this study indicated that, depending upon coal type and fly ash particle size, vaporization-condensation, vaporization-surface reaction, and As-CaO in-char reaction all play a role in arsenic transformations under combustion conditions.

  9. CD

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    Square Footage, and Number of Workers in the Building.) Metal Panel: A wall construction panel made of aluminum or galvanized steel fabricated in factories and fastened to the...

  10. CD

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... The loose waste sludge was then immobilized by blowing in dry powdered grout. The dry ... melter pouring is suspended, at least one steam atomized scrubber operates all the time. ...

  11. An electrostatic nanogenerator based on ZnO/ZnS core/shell electrets with stabilized quasi-permanent charge

    SciTech Connect (OSTI)

    Wang, Chao; Cai, Liang; Feng, Yajuan; Chen, Lin; Yan, Wensheng E-mail: zhsun@ustc.edu.cn; Liu, Qinghua; Yao, Tao; Hu, Fengchun; Pan, Zhiyun; Sun, Zhihu E-mail: zhsun@ustc.edu.cn; Wei, Shiqiang

    2014-06-16

    ZnO-based nanogenerators with excellent performance and convenient functionalization are particularly desirable for self-powered technology, which is however difficult to achieve simultaneously in traditional piezoelectric ZnO nanogenerators. Here, we report a design of electrostatic ZnO nanogenerator by virtue of a type-II ZnO/ZnS core/shell nanostructure electrets, which can turn acoustic waves into electric power with an energy conversion efficiency of 2.2%. The ZnO/ZnS core/shell electrets are charged by ultraviolet irradiation with a long-term stability of the electrostatic charges under ambient condition. The electronic and atomic structure evolution in the charged ZnO/ZnS core/shell electrets are also discussed by detailed experimental and theoretical investigations. This design opens up an alternative path for fabricating robust ZnO-based nanogenerator for future nanotechnology application.

  12. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  13. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  14. WPN 10-3: Procurement Toolkit CD

    Office of Energy Efficiency and Renewable Energy (EERE)

    To issue the Procurement Toolkit CD to all Grantees, to share with their local agencies, for use in the Weatherization Assistance Program.

  15. Temperature cycling vapor deposition HgI.sub.2 crystal growth

    DOE Patents [OSTI]

    Schieber, Michael M.; Beinglass, Israel; Dishon, Giora

    1977-01-01

    A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

  16. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect (OSTI)

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  17. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect (OSTI)

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishäupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

  18. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  19. ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huso, Jesse; Morrison, John L.; Che, Hui; Sundararajan, Jency P.; Yeh, Wei Jiang; McIlroy, David; Williams, Thomas J.; Bergman, Leah

    2011-01-01

    An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

  20. Arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocables with tunable shell composition for efficient photovoltaics

    SciTech Connect (OSTI)

    Akram, Muhammad Aftab; Javed, Sofia; Xu, Jun; Mujahid, Mohammad; Lee, Chun-Sing

    2015-05-28

    Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} core/shell nanocables with tunable shell compositions over the full range of 0???x???1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In{sub x}Ga{sub 1?x}, ZnO/CuSe/(In{sub x}Ga{sub 1?x}){sub 2}Se{sub 3}, and ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2}, are well designed and successfully achieved. Composition-dependent influences of the CuIn{sub x}Ga{sub 1?x}Se{sub 2} shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J{sub SC}) but a decrease in open-circuit voltage (V{sub OC}) for the ZnO/CuIn{sub x}Ga{sub 1?x}Se{sub 2} nanocable solar cells. An array of ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} nanocables with a length of ?1??m and a shell thickness of ?10?nm exhibits a bandgap of 1.20?eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5?G illumination at an intensity of 100 mW/cm{sup 2}. It dramatically surpasses that (0.22%) of the ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer.

  1. Crystal structure and magnetic properties and Zn substitution effects on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6}

    SciTech Connect (OSTI)

    Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Guo, Yanfeng, E-mail: Yangfeng.Guo@physics.ox.ac.uk [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Sun, Ying [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Matsushita, Yoshitaka [Materials Analysis Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan)

    2013-08-15

    The effects of substituting Co on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6} with Zn were investigated by synchrotron X-ray diffraction, magnetic susceptibility, isothermal magnetization, and specific heat measurements. To the best of our knowledge, this is the first report to describe the successful substitution of Co in Sr{sub 3}Co{sub 2}O{sub 6} with Zn. The substitution was carried out by a method involving high pressures and temperatures to obtain Sr{sub 3}CoZnO{sub 6}, which crystalized into a K{sub 4}CdCl{sub 6}-derived rhombohedral structure with a space group of R-3c, similar to the host compound. With the Zn substitution, the Ising-type magnetic anisotropy of the host compound remarkably reduced; the newly formed Sr{sub 3}CoZnO{sub 6} became magnetically isotropic with Heisenberg-type characteristics. This could probably be ascribed to the establishment of a different interaction pathway, Co{sup 4+}(S=1/2)OZn{sup 2+}(S=0)OCo{sup 4+}(S=1/2). Details of the magnetic properties of Zn substituted Sr{sub 3}Co{sub 2}O{sub 6} were reported. - Graphical abstract: Crystal structure of the spin-chain compound Sr{sub 3}CoZnO{sub 6} synthesized at 6 GPa. Zn atoms preferably occupy the trigonal prism sites rather than the octahedral sites. As a result, the compound is much magnetically isotropic. Highlights: Effects of substituting Co with Zn on spin-chain magnetism of Sr{sub 3}Co{sub 2}O{sub 6} were studied. High-pressure synthesis resulted in a solid solution of Sr{sub 3}CoZnO{sub 6}. Sr{sub 3}CoZnO{sub 6} showed more isotropic magnetism than the host Sr{sub 3}Co{sub 2}O{sub 6}.

  2. Homoepitaxy of ZnO and MgZnO Films at 90 C

    SciTech Connect (OSTI)

    Ehrentraut, Dirk; Goh, Gregory K.L.; Fujii, Katsushi; Ooi, Chin Chun; Quang, Le Hong; Fukuda, Tsuguo; Kano, Masataka; Zhang, Yuantao; Matsuoka, Takashi

    2014-06-01

    The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, Mg{sub x}Zn{sub 1?x}O, films under very low temperature conditions at T=90 C and ambient pressure has been explored. A maximum Mg content of 1 mol% was recorded by energy dispersive spectroscopy. The growth on the polar (0 0 0 1) and (0 0 0 1) faces resulted in films that are strongly different in their structural and optical quality as evidenced by high-resolution X-ray diffraction, secondary electron microscopy, and photoluminescence. This is a result of the chemistry and temperature of the solution dictating the stability range of growth-governing metastable species. The use of trisodium citrate, Na{sub 3}C{sub 6}H{sub 5}O{sub 7}, yielded coalesced, mirror-like homoepitaxial films whereas adding magnesium nitrate hexahydrate, Mg(NO{sub 3}){sub 2}6H{sub 2}O, favors the growth of films with pronounced faceting. - Graphical abstract: Homoepitaxial ZnO films grown from aqueous solution below boiling point of water on a ZnO substrate with off-orientation reveal parallel grooves that are characterized by (1 0 1{sup } 1) facets. Adding trisodium citrate yields closed, single-crystalline ZnO films, which can further be functionalized. Alloying with MgO yields MgZnO films with low Mg content only. - Highlights: A simple method to synthesize uniform single crystalline homoepitaxial ZnO and MgZnO films. ZnO growth on (0 0 0 1) and (0 0 0 1{sup }) face resulted in films that are strongly different in their structural and optical quality. Single crystalline MgZnO film was fabricated under mild conditions (90 C and ambient pressure). Mg incorporation of nearly 1 mol% was obtained while maintaining single phase wurtzite structure.

  3. CD-0, Approve Mission Need

    Broader source: Energy.gov [DOE]

    The Initiation Phase begins with the identification of a mission-related need. A Program Office will identify a credible performance gap between its current capabilities and capacities and those required to achieve the goals articulated in its strategic plan. The Mission Need Statement (MNS) is the translation of this gap into functional requirements that cannot be met through other than material means. It should describe the general parameters of the solution and why it is critical to the overall accomplishment of the Department’s mission, including the benefits to be realized. The mission need is independent of a particular solution, and should not be defined by equipment, facility, technological solution, or physical end-item. This approach allows the Program Office the flexibility to explore a variety of solutions and not limit potential solutions (refer to DOE G 413.3-17). The requirements needed to attain CD-0 are listed below.

  4. Report on International Collaboration Involving the FE Heater and HG-A Tests at Mont Terri

    SciTech Connect (OSTI)

    Houseworth, Jim; Rutqvist, Jonny; Asahina, Daisuke; Chen, Fei; Vilarrasa, Victor; Liu, Hui-Hai; Birkholzer, Jens

    2013-11-06

    Nuclear waste programs outside of the US have focused on different host rock types for geological disposal of high-level radioactive waste. Several countries, including France, Switzerland, Belgium, and Japan are exploring the possibility of waste disposal in shale and other clay-rich rock that fall within the general classification of argillaceous rock. This rock type is also of interest for the US program because the US has extensive sedimentary basins containing large deposits of argillaceous rock. LBNL, as part of the DOE-NE Used Fuel Disposition Campaign, is collaborating on some of the underground research laboratory (URL) activities at the Mont Terri URL near Saint-Ursanne, Switzerland. The Mont Terri project, which began in 1995, has developed a URL at a depth of about 300 m in a stiff clay formation called the Opalinus Clay. Our current collaboration efforts include two test modeling activities for the FE heater test and the HG-A leak-off test. This report documents results concerning our current modeling of these field tests. The overall objectives of these activities include an improved understanding of and advanced relevant modeling capabilities for EDZ evolution in clay repositories and the associated coupled processes, and to develop a technical basis for the maximum allowable temperature for a clay repository. The R&D activities documented in this report are part of the work package of natural system evaluation and tool development that directly supports the following Used Fuel Disposition Campaign (UFDC) objectives: ? Develop a fundamental understanding of disposal-system performance in a range of environments for potential wastes that could arise from future nuclear-fuel-cycle alternatives through theory, simulation, testing, and experimentation. ? Develop a computational modeling capability for the performance of storage and disposal options for a range of fuel-cycle alternatives, evolving from generic models to more robust models of performance

  5. CdO-CdS nano-composites as improved photo-catalysts for the generation of hydrogen from water

    SciTech Connect (OSTI)

    Kahane, Shital V.; Mahamuni, Shailaja; Sasikala, R.; Sudarsan, V.

    2014-04-24

    CdO-CdS nanocomposites were prepared by polyol method followed by heating at 300C. XRD study confirmed the atomic scale mixing of CdO and CdS nanoparticles, leading to the formation of CdSO{sub 3} phase at the interfacial region between CdO and CdS. The enhancement in photo-catalytic activity for hydrogen generation from water is observed in case of CdO-CdS nanocomposites compared to individual CdS and CdO nanoparticles. Based on XRD, steady state and time resolved luminescence studies and surface area measurements, it is determined that, the fine mixing of CdS and CdO, higher surface area of the composite sample and increase in lifetime of the charge carriers are responsible for the observed increase in hydrogen yield from water when composite sample was used as the photo-catalyst compared to individual components.

  6. Cyclotron production of {sup 61}Cu using natural Zn and enriched {sup 64}Zn targets

    SciTech Connect (OSTI)

    Asad, A. H.; Smith, S. V.; Chan, S.; Jeffery, C. M.; Morandeau, L.; Price, R. I.

    2012-12-19

    Copper-61 ({sup 61}Cu) shares with {sup 64}Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study {sup 61}Cu was produced using the {sup 64}Zn(p,{alpha}){sup 61}Cu reaction on natural Zn or enriched {sup 64}Zn targets. The enriched {sup 64}Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30{mu}A; at 11.7, 14.5 or 17.6MeV over 30-60min. The {sup 61}Cu (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The {sup 64}Zn target material was recovered after each run, for re-use. In a direct comparison with enriched {sup 64}Zn-target results, {sup 61}Cu production using the cheaper {sup nat}Zn target proved to be an effective alternative.

  7. Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis

    SciTech Connect (OSTI)

    Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

    2011-12-23

    Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

  8. Critical Decision 2 (CD-2) Approval Template | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Critical Decision 2 (CD-2) Approval Template Critical Decision 2 (CD-2) Approval Template File ExampleCD-2Template02-14-12.docx More Documents & Publications Example BCP...

  9. CdTe devices and method of manufacturing same

    SciTech Connect (OSTI)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  10. Fura-2 measurement of cytosolic calcium in HgCl/sub 2/-treated rabbit renal turbular cells

    SciTech Connect (OSTI)

    Trump, B.F.; Smith, M.W.

    1986-05-01

    This abstract reports the effect of HgCl/sub 2/ on cytosolic ionized calcium (Ca/sup 2 +/)/sub c/, measured by the fluorescent chelator Fura-2, in trypsinized rabbit renal tubular cells at 37/sup 0/C in Hanks salt solution, pH 7.2, containing 1.37 mM CaCl/sub 2/. Viability measured fluorometrically with propidium iodide correlated well with that determined using trypan blue. HgCl/sub 2/ (1-10 ..mu..M) induced rapid and dose-dependent increases up to 5-fold normal (Ca/sup 2 +/)/sub c/. After 1-3 min the rate of increase slowed or stopped. At higher doses of HgCl/sub 2/ (20-100 ..mu..M) an unexpected pattern of (Ca/sup 2 +/)/sub c/ changes occurred. After an initial 5-6-fold increase by 1 min, (Ca/sup 2 +/)/sub c/ decreased in the next 2-3 min to 2-3-fold normal levels. This change was followed by a second increase of (Ca/sup 2 +/)/sub c/ at a much slower rate which did appear to be dose-related. Calcium channel blockers and calmodulin inhibitors had little or no effect. Inhibitors of mitochondrial function, antimycin and 2,4-dinitrophenol, interfered with the fluorescent assay; KCN totally inhibited HgCl/sub 2/-induced (Ca/sup 2 +/)/sub c/ changes while hypoxia had no apparent effect. The -SH group binding compound N-ethyl maleimide increased (Ca/sup 2 +/)/sub c/ 4-5 fold; addition of 25 ..mu..M Hg caused faster peaking and recovery of (Ca/sup 2 +/)/sub c/. The mechanism of Ca/sup 2 +/ buffering triggered by higher HgCl/sub 2/ concentrations is as yet unknown.

  11. Formation of Zn-rich phyllosilicate, Zn-layered double hydroxide and hydrozincite in contaminated calcareous soils

    SciTech Connect (OSTI)

    Jacquat, Olivier; Voegelin, Andreas; Villard, Andre; Marcus, Matthew A.; Kretzschmar, Ruben

    2007-10-15

    Recent studies demonstrated that Zn-phyllosilicate- and Zn-layered double hydroxide-type (Zn-LDH) precipitates may form in contaminated soils. However, the influence of soil properties and Zn content on the quantity and type of precipitate forming has not been studied in detail so far. In this work, we determined the speciation of Zn in six carbonate-rich surface soils (pH 6.2 to 7.5) contaminated by aqueous Zn in the runoff from galvanized power line towers (1322 to 30090 mg/kg Zn). Based on 12 bulk and 23 microfocused extended X-ray absorption fine structure (EXAFS) spectra, the number, type and proportion of Zn species were derived using principal component analysis, target testing, and linear combination fitting. Nearly pure Zn-rich phyllosilicate and Zn-LDH were identified at different locations within a single soil horizon, suggesting that the local availabilities of Al and Si controlled the type of precipitate forming. Hydrozincite was identified on the surfaces of limestone particles that were not in direct contact with the soil clay matrix. With increasing Zn loading of the soils, the percentage of precipitated Zn increased from {approx}20% to {approx}80%, while the precipitate type shifted from Zn-phyllosilicate and/or Zn-LDH at the lowest studied soil Zn contents over predominantly Zn-LDH at intermediate loadings to hydrozincite in extremely contaminated soils. These trends were in agreement with the solubility of Zn in equilibrium with these phases. Sequential extractions showed that large fractions of soil Zn ({approx}30% to {approx}80%) as well as of synthetic Zn-kerolite, Zn-LDH, and hydrozincite spiked into uncontaminated soil were readily extracted by 1 M NH{sub 4}NO{sub 3} followed by 1 M NH{sub 4}-acetate at pH 6.0. Even though the formation of Zn precipitates allows for the retention of Zn in excess to the adsorption capacity of calcareous soils, the long-term immobilization potential of these precipitates is limited.

  12. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  13. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  14. Memorandum, CH2M HG Idaho, LLC, Request for Variance to Title 10 Code of Federal Regulations part 851, "Worker Safety and Health"

    Broader source: Energy.gov [DOE]

    CH2M HG Idaho, LLC, Request for Variance to Title 10 Code of Federal Regulations part 851, "Worker Safety and Health"

  15. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect (OSTI)

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  16. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  17. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    SciTech Connect (OSTI)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; James, R. B.

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).

  18. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  19. Energy efficiency CD ROM. Final technical report

    SciTech Connect (OSTI)

    Totten, Michael

    1998-01-01

    The Center for Renewable Energy and SustainableTechnology (CREST) has completed the three tasks of subcontract DE-FC36-97GO10228. Three separate multimedia CD-ROM products were developed.

  20. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    SciTech Connect (OSTI)

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K.

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  1. Single crystalline multi-petal Cd nanoleaves prepared by thermal reduction of CdO

    SciTech Connect (OSTI)

    Khan, Waheed S.; National Institute for Biotechnology and Genetic Engineering , P.O. Box No. 577, Jhang Road, Faisalabad ; Cao, Chuanbao; Aslam, Imran; Ali, Zulfiqar; Butt, Faheem K.; Mahmood, Tariq; Nabi, Ghulam; Ihsan, Ayesha; Usman, Zahid; Rehman, Asma

    2013-02-15

    Highlights: ? Cd nanoleaves are obtained on abraded Cu substrate by thermal reduction of CdO. ? Vapour solid (VS) growth mechanism governs the formation of Cd nanoleaves (CdNLs). ? PL spectrum for CdNLs exhibits a strong ultraviolet (UV) emission band at 353 nm. ? UV band is attributed to interband radiative recombination under Xe illumination. -- Abstract: Multi-petal cadmium metal nanoleaves with 3040 nm thickness were fabricated on abraded copper substrate by simple thermal reduction of cadmium oxide (CdO) powder at 1050 C inside horizontal tube furnace (HTF) under nitrogen gas flow. The structural, compositional and morphological characterizations of the as-prepared cadmium nanoleaves (CdNLs) were performed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction. Non-catalytic vapoursolid (VS) process based growth mechanism governing the formation of CdNLs has been proposed and discussed briefly. Photoluminescence (PL) spectrum for CdNLs measured at room temperature exhibited a single prominent emission band at 353 nm which may either be ascribed to surface oxidation effects or interband radiative recombination under Xe light illumination.

  2. Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S., Ding, B., Liu, X., Wei, X., Ros, R., Liu, Y., Yan, H., and Francis, M. Title: Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Source: Journal of the American

  3. Impact of air-exposure on the chemical and electronic structure ofZnO:Zn3N2 thin films

    SciTech Connect (OSTI)

    Bar, M.; Ahn, K.-S.; Shet, S.; Yan, Y.; Weinhardt, L.; Fuchs, O.; Blum, M.; Pookpanratana, S.; George, K.; Yang, W.; Denlinger, J.D.; Al-Jassim, M.; Heske, C.

    2008-09-08

    The chemical and electronic surface structure of ZnO:Zn3N2 ("ZnO:N") thin films with different N contents was investigated by soft x-ray emission spectroscopy. Upon exposure to ambient air (in contrast to storage in vacuum), the chemical and electronic surface structure of the ZnO:N films changes substantially. In particular, we find that the Zn3N2/(Zn3N2+ZnO) ratio decreases with exposure time and that this change depends on the initial N content. We suggest a degradation mechanism based on the reaction of the Zn3N2 content with atmospheric humidity.

  4. Introduction of mercury resistant bacterial strains to Hg(II) amended soil microcosms increases the resilience of the natural microbial community to mercury stress

    SciTech Connect (OSTI)

    de Lipthay, Julia R.; Rasmussen, Lasse D.; Serensen, Soren J.

    2004-03-17

    Heavy metals are among the most important groups of pollutant compounds, and they are highly persistent in the soil environment. Techniques that can be used for the remediation of heavy metal contaminated environments thus need to be evolved. In the present study we evaluated the effect of introducing a Hg resistance plasmid in subsurface soil communities. This was done in microcosms with DOE subsurface soils amended with 5-10 ppm of HgCl2. Two microcosms were set up. In microcosm A we studied the effect of adding strain S03539 containing either the Hg resistance conjugative plasmid, pJORD 70, or the Hg resistance mobilizable plasmid, pPB117. In microcosm B we studied the effect of adding strain KT2442 with and without pJORD70. For both microcosms, the effect on the resilience of the indigenous bacterial community as well as the effect on the soil concentration of Hg was evaluated.

  5. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    SciTech Connect (OSTI)

    Fan, Zhaochuan; Vlugt, Thijs J. H.; Koster, Rik S.; Fang, Changming; Huis, Marijn A. van; Wang, Shuaiwei; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., “Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth,” Nano Lett. 14, 3661–3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  6. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect (OSTI)

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  7. Spin noise spectroscopy of ZnO

    SciTech Connect (OSTI)

    Horn, H.; Berski, F.; Hbner, J.; Oestreich, M.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  8. Stable highly conductive ZnO via reduction of Zn vacancies

    SciTech Connect (OSTI)

    Look, David C.; Droubay, Timothy C.; Chambers, Scott A.

    2012-09-04

    Growth of Ga-doped ZnO by pulsed laser deposition at 200 ?C in an ambient of Ar and H2 produces a resistivity ? of ~ 1.5 x 10-4 ?-cm, stable to 500 ?C. Annealing on Zn foil reduces ? to ~ 1.2 x 10-4 ?-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

  9. High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint

    SciTech Connect (OSTI)

    Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

    2002-05-01

    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

  10. cd ordering | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CD-DVD Ordering System Please complete the following information so the National Energy Technology Lab (NETL) can promptly process your order. Below is a sample of the fields required to order a CD or DVD. If any fields are left blank you may not receive your disk. Data gathered by this form will be used only by the NETL. and will not be distributed for any other purpose. Data transferred via the Internet to this database should not be considered secure. Last Name: Doe First Name: John Middle

  11. Optical probing of MgZnO/ZnO heterointerface confinement potential energy levels

    SciTech Connect (OSTI)

    Solovyev, V. V.; Van'kov, A. B.; Kukushkin, I. V.; Falson, J.; Kozuka, Y.; Zhang, D.; Smet, J. H.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2015-02-23

    Low-temperature photoluminescence and reflectance measurements were employed to study the optical transitions present in two-dimensional electron systems confined at Mg{sub x}Zn{sub 1x}O/ZnO heterojunctions. Transitions involving A- and B-holes and electrons from the two lowest subbands formed within the confinement potential are detected. In the studied density range of 2.06.5??10{sup 11?}cm{sup ?2}, the inter-subband splitting is measured and the first excited electron subband is shown to be empty of electrons.

  12. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

    DOE Patents [OSTI]

    Chen, Wen S.; Stewart, John M.

    1992-01-07

    A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

  13. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    SciTech Connect (OSTI)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  14. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potentialmore » way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

  15. Optical Properties of ZnO-Alloyed Nanocrystalline Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Che, Hui; Huso, Jesse; Morrison, John L.; Thapa, Dinesh; Huso, Michelle; Yeh, Wei Jiang; Tarun, M. C.; McCluskey, M. D.; Bergman, Leah

    2012-01-01

    ZnO is emore » merging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on M g x Z n 1 − x O and Z n S 1 − x O x nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg 0 .3 Zn 0 .7 O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg 0 .3 Zn 0 .7 O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS 0 .76 O 0 .24 and ZnS 0 .16 O 0 .84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS 0 .16 O 0 .84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification.« less

  16. Neurotoxicological effects of cinnabar (a Chinese mineral medicine, HgS) in mice

    SciTech Connect (OSTI)

    Huang, C.-F.; Liu, S.-H.; Lin-Shiau, S.-Y.

    2007-10-15

    Cinnabar, a naturally occurring mercuric sulfide (HgS), has long been used in combination with traditional Chinese medicine as a sedative for more than 2000 years. Up to date, its pharmacological and toxicological effects are still unclear, especially in clinical low-dose and long-term use. In this study, we attempted to elucidate the effects of cinnabar on the time course of changes in locomotor activities, pentobarbital-induced sleeping time, motor equilibrium performance and neurobiochemical activities in mice during 3- to 11-week administration at a clinical dose of 10 mg/kg/day. The results showed that cinnabar was significantly absorbed by gastrointestinal (G-I) tract and transported to brain tissues. The spontaneous locomotor activities of male mice but not female mice were preferentially suppressed. Moreover, frequencies of jump and stereotype-1 episodes were progressively decreased after 3-week oral administration in male and female mice. Pentobarbital-induced sleeping time was prolonged and the retention time on a rotating rod (60 rpm) was reduced after treatment with cinnabar for 6 weeks and then progressively to a greater extent until the 11-week experiment. In addition, the biochemical changes in blood and brain tissues were studied; the inhibition of Na{sup +}/K{sup +}-ATPase activities, increased production of lipid peroxidation (LPO) and nitric oxide (NO) were found with a greater extent in male mice than those in female mice, which were apparently correlated with their differences in the neurological responses observed. In conclusion, these findings, for the first time, provide evidence of the pharmacological and toxicological basis for understanding the sedative and neurotoxic effects of cinnabar used as a Chinese mineral medicine for more than 2000 years.

  17. Results of Hg speciation testing on tanks 30, 32, and 37 depth samples

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2015-11-30

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team. The twelfth shipment of samples was designated to include 3H evaporator system Tank 30, 32, and 37 depth samples. The Tank 30 depth sample (HTF-30-15-70) was taken at 190 inches from the tank bottom and the Tank 32 depth sample (HTF-32-15-68) was taken at 89 inches from the tank bottom and both were shipped to SRNL on June 29, 2015 in an 80 mL stainless steel dip bottles. The Tank 37 surface sample (HTF-37-15-94) was taken around 253.4 inches from the tank bottom and shipped to SRNL on July 21, 2015 in an 80 mL stainless steel dip bottle. All samples were placed in the SRNL Shielded Cells and left unopened until intermediate dilutions were made on July 24, 2015 using 1.00 mL of sample diluted to 100.00 mL with deionized H2O. A 30 mL Teflon® bottle was rinsed twice with the diluted tank sample and then filled leaving as little headspace as possible. It was immediately removed from the Shielded Cells and transferred to refrigerated storage where it remained at 4 °C until final dilutions were made on October 20. A second portion of the cells diluted tank sample was poured into a shielded polyethylene bottle and transferred to Analytical Development for radiochemical analysis data needed for Hazardous Material Transportation calculations.

  18. Polymorphisms in MIR137HG and microRNA-137-regulated genes influence gray matter structure in schizophrenia

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wright, C.; Gupta, C. N.; Chen, J.; Patel, V.; Calhoun, V. D.; Ehrlich, S.; Wang, L.; Bustillo, J. R.; Perrone-Bizzozero, N. I.; Turner, J. A.

    2016-02-02

    Evidence suggests that microRNA-137 (miR-137) is involved in the genetic basis of schizophrenia. Risk variants within the miR-137 host gene (MIR137HG) influence structural and functional brain-imaging measures, and miR-137 itself is predicted to regulate hundreds of genes. We evaluated the influence of a MIR137HG risk variant (rs1625579) in combination with variants in miR-137- regulated genes TCF4, PTGS2, MAPK1 and MAPK3 on gray matter concentration (GMC). These genes were selected based on our previous work assessing schizophrenia risk within possible miR-137-regulated gene sets using the same cohort of subjects. A genetic risk score (GRS) was determined based on genotypes of thesemore » four schizophrenia risk-associated genes in 221 Caucasian subjects (89 schizophrenia patients and 132 controls). The effects of the rs1625579 genotype with the GRS of miR-137-regulated genes in a three-way interaction with diagnosis on GMC patterns were assessed using a multivariate analysis. We found that schizophrenia subjects homozygous for the MIR137HG risk allele show significant decreases in occipital, parietal and temporal lobe GMC with increasing miR-137-regulated GRS, whereas those carrying the protective minor allele show significant increases in GMC with GRS. No correlations of GMC and GRS were found in control subjects. Variants within or upstream of genes regulated by miR-137 in combination with the MIR137HG risk variant may influence GMC in schizophrenia-related regions in patients. Furthermore, given that the genes evaluated here are involved in protein kinase A signaling, dysregulation of this pathway through alterations in miR-137 biogenesis may underlie the gray matter loss seen in the disease.« less

  19. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  20. Synthesis and structural characterization of the new clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schafer, Marion; Bobev, Svilen

    2016-03-25

    This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. Furthermore, this and several other details of the crystal chemistry are elaborated.

  1. The ZnO p-n homojunctions modulated by ZnMgO barriers

    SciTech Connect (OSTI)

    Yang, Jing-Jing; Fang, Qing-Qing Wang, Dan-Dan; Du, Wen-Han

    2015-04-15

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  2. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect (OSTI)

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  3. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect (OSTI)

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  4. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect (OSTI)

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  5. Hierarchical ZnO Structures Templated with Amino Acid Based Surfactant...

    Office of Scientific and Technical Information (OSTI)

    Hierarchical ZnO Structures Templated with Amino Acid Based Surfactants Citation Details In-Document Search Title: Hierarchical ZnO Structures Templated with Amino Acid Based ...

  6. Integrated Biorefinery Research Facility (IBRF I-II) (Post CD...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 PDF icon 000521 & ...

  7. Wind Energy Resource Atlas of Armenia (CD-ROM)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Resource Atlas of Armenia (CD-ROM) http:www.nrel.govdocsfy03osti33877CD.zip (ZIP 31.9 MB) NRELCD-500-33877 July 2003 Instructions: The URL above links to a zipped archive...

  8. Buckeye Water C&D District | Open Energy Information

    Open Energy Info (EERE)

    Buckeye Water C&D District (Redirected from Buckeye Irrigation District) Jump to: navigation, search Name: Buckeye Water C&D District Place: Arizona Phone Number: 623-386-2196...

  9. Buckeye Water C&D District | Open Energy Information

    Open Energy Info (EERE)

    Buckeye Water C&D District Jump to: navigation, search Name: Buckeye Water C&D District Place: Arizona Phone Number: 623-386-2196 Website: www.bwcdd.com Outage Hotline: Upper...

  10. Advanced Combustion Modeling with STAR-CD using Transient Flemelet...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Modeling with STAR-CD using Transient Flemelet Models: TIF and TPV Advanced Combustion Modeling with STAR-CD using Transient Flemelet Models: TIF and TPV Presentation given at the ...

  11. Neutral nitrogen acceptors in ZnO: The {sup 67}Zn hyperfine interactions

    SciTech Connect (OSTI)

    Golden, E. M.; Giles, N. C.; Evans, S. M.; Halliburton, L. E.

    2014-03-14

    Electron paramagnetic resonance (EPR) is used to characterize the {sup 67}Zn hyperfine interactions associated with neutral nitrogen acceptors in zinc oxide. Data are obtained from an n-type bulk crystal grown by the seeded chemical vapor transport method. Singly ionized nitrogen acceptors (N{sup −}) initially present in the crystal are converted to their paramagnetic neutral charge state (N{sup 0}) during exposure at low temperature to 442 or 633 nm laser light. The EPR signals from these N{sup 0} acceptors are best observed near 5 K. Nitrogen substitutes for oxygen ions and has four nearest-neighbor cations. The zinc ion along the [0001] direction is referred to as an axial neighbor and the three equivalent zinc ions in the basal plane are referred to as nonaxial neighbors. For axial neighbors, the {sup 67}Zn hyperfine parameters are A{sub ‖} = 37.0 MHz and A{sub ⊥} = 8.4 MHz with the unique direction being [0001]. For nonaxial neighbors, the {sup 67}Zn parameters are A{sub 1} = 14.5 MHz, A{sub 2} = 18.3 MHz, and A{sub 3} = 20.5 MHz with A{sub 3} along a [101{sup ¯}0] direction (i.e., in the basal plane toward the nitrogen) and A{sub 2} along the [0001] direction. These {sup 67}Zn results and the related {sup 14}N hyperfine parameters provide information about the distribution of unpaired spin density at substitutional neutral nitrogen acceptors in ZnO.

  12. CD Label and Package Templates | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Publications, Exhibits, & Logos » Templates » CD Label and Package Templates CD Label and Package Templates The Office of Energy Efficiency and Renewable Energy (EERE) has developed templates for CD labels and CD packages. These can be used for all EERE products. Both templates are available as EPS files, which can be downloaded and edited in a graphics package like Adobe Illustrator. You are not required to use these templates for your EERE products. These templates were designed to allow

  13. Mobility of indium on the ZnO(0001) surface

    SciTech Connect (OSTI)

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  14. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  15. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    SciTech Connect (OSTI)

    Rose, D.H.; Levi, D.H.; Matson, R.J.

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  16. Anisotropy in CdSe quantum rods

    SciTech Connect (OSTI)

    Li, Liang-shi

    2003-09-01

    The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough

  17. Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots

    SciTech Connect (OSTI)

    Gardelis, Spiros Nassiopoulou, Androula G.

    2014-05-05

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  18. Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

    SciTech Connect (OSTI)

    K, P.; Tekmen, S.; Baltakesmez, A.; Tzemen, S.; Meral, K.; Onganer, Y.

    2013-12-15

    In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from ?0.9 V to ?1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively.

  19. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect (OSTI)

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  20. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  1. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities andmore » Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.« less

  2. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    SciTech Connect (OSTI)

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.

  3. Characterization of electrospray ion-beam-deposited CdSe/ZnS quantum dot thin films from a colloidal solution

    SciTech Connect (OSTI)

    Tani, Yuki; Kobayashi, Satoshi; Kawazoe, Hiroshi

    2008-07-15

    Colloidal semiconductor quantum dot (QD) nanocrystals can be deposited in the form of inorganic thin films using the ion beam direct deposition method. To simultaneously preserve the nanocrystal configuration and remove the organics derived from the ligand and solvent, the authors used an electrospray technique and an ion beam technique. These techniques provided a soft-ionization process to obtain nanocrystalline ions and a collision process to attain a nonequilibrium state of the deposits, respectively. Because of the nature of the soft-ionization process, the electrospray phenomenon resulted in various forms of QD ions that depended on the preparation of the colloidal solution source and spraying conditions. The authors concentrated on finding operational conditions of the system that deposited thin films with reduced organics concentrations by examining the correlation between fast Fourier transform infrared absorption spectroscopy and photoluminescence intensity. The morphology of the deposited films was observed using an atomic force microscope.

  4. Control of defects and impurities in production of CdZnTe crystals by the Bridgman method

    SciTech Connect (OSTI)

    Glass, H.L.; Socha, A.J.; Bakken, D.W.; Speziale, V.M.; Flint, J.P.

    1998-12-31

    Cadmium zinc telluride crystals were grown by vertical Bridgman processes using in situ compounding from high purity elements into pyrolytic boron nitride crucibles within sealed fused quartz ampoules containing cadmium vapor at a pressure of roughly one atmosphere. These conditions produce material having the low etch pit density, low precipitate density, high infrared transmission and high purity required for use as substrates for infrared focal plane detector arrays fabricated in epitaxial mercury cadmium telluride. Similar processes should be satisfactory for producing cadmium zinc telluride for gamma ray detectors.

  5. Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation

    DOE Patents [OSTI]

    Washington, II, Aaron L; Duff, Martine C; Teague, Lucile C; Burger, Arnold; Groza, Michael

    2014-11-11

    An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

  6. OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.

    SciTech Connect (OSTI)

    BOLOTNIKOV,A.E.; ABDUL-JABBAR, N.M.; BABALOLA, S.; CAMARDA, G.S.; CUI, Y.; HOSSAIN, A.; JACKSON, E.; JACKSON, H.; JAMES, J.R.; LURYI, A.L.; JAMES, R.B.

    2007-08-21

    In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5{approx}12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described.

  7. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of air-gap dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  8. Nuclear structure ''southeast'' of {sup 208}Pb: Isomeric states in {sup 208}Hg and {sup 209}Tl

    SciTech Connect (OSTI)

    Al-Dahan, N.; Podolyak, Zs.; Regan, P. H.; Alkhomashi, N.; Deo, A. Y.; Farrelly, G.; Steer, S. J.; Cullen, I. J.; Gelletly, W.; Swan, T.; Thomas, J. S.; Walker, P. M.; Gorska, M.; Grawe, H.; Gerl, J.; Pietri, S. B.; Wollersheim, H. J.; Boutachkov, P.; Domingo-Pardo, C.; Farinon, F.

    2009-12-15

    The nuclear structure of neutron-rich N>126 nuclei has been investigated following their production via relativistic projectile fragmentation of a E/A=1 GeV {sup 238}U beam. Metastable states in the N=128 isotones {sup 208}Hg and {sup 209}Tl have been identified. Delayed {gamma}-ray transitions are interpreted as arising from the decay of I{sup {pi}}=(8{sup +}) and (17/2{sup +}) isomers, respectively. The data allow for the so far most comprehensive verification of the shell-model approach in the region determined by magic numbers Z<82 and N>126.

  9. Copper migration in CdTe heterojunction solar cells

    SciTech Connect (OSTI)

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  10. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model tomore » produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.« less