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1

Persisting impact of historical mining activity to metal (Pb, Zn, Cd, Tl, Hg) and metalloid (As, Sb) enrichment in sediments of the Gardon River,  

E-Print Network [OSTI]

) enrichment in sediments of the Gardon River, Southern France Eléonore Resongles a, , Corinne Casiot a , Rémi in sediments was investigated in multi-source context. · Metal(loid) enrichment during the 19th century in sediment. · Cd, Zn and Pb may be mobilized under changing environmental conditions. a b s t r a c ta r t i

Demouchy, Sylvie

2

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

SciTech Connect (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

3

CdTe/CdZnTe pixellated radiation detector.  

E-Print Network [OSTI]

??The work in this thesis is focused on the study of CdTe/CdZnTe pixellated detectors. During this research, three main aspects have been covered in the (more)

Mohd Zain, Rasif

2015-01-01T23:59:59.000Z

4

CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC  

E-Print Network [OSTI]

123 CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE.-Briand, 92190 Meudon/Bellevue, France Résumé. 2014 En vue de la croissance de cristaux de CdTe de haute cristaux semi-isolants Cd0, 9Hg0, 1Te. Abstract. 2014 Some aspects of the thermodynamic state of CdTe

Paris-Sud XI, Université de

5

Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells  

SciTech Connect (OSTI)

The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

Chen, Qinjun; Sin Ang, Yee [School of Physics, University of Wollongong, New South Wales 2522 (Australia)] [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Wang, Xiaolin [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)] [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia); Lewis, R. A.; Zhang, Chao [School of Physics, University of Wollongong, New South Wales 2522 (Australia) [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

2013-11-04T23:59:59.000Z

6

Observation de super-rseaux CdTe-HgTe par microscopie lectronique en transmission  

E-Print Network [OSTI]

-conducteurs II-VI a été beaucoup plus tardive [2]. Dans cette dernière famille, le système CdTe- HgTe présente l'avantage d'un accord de maille quasi parfait entre les deux composés (a = 0,648 nm pour CdTe contre a = 0 JET MOL?CULAIRE. - Les super- réseaux CdTe-HgTe ont été épitaxiés sur un substrat CdTe d

Paris-Sud XI, Université de

7

CdTe, CdTe/CdS Core/Shell, and CdTe/CdS/ZnS Core/Shell/Shell Quantum Dots Study.  

E-Print Network [OSTI]

?? CdTe, CdTe/CdS core/shell, and CdTe/CdS/ZnS core/shell/shell quantum dots (QDs) are potential candidates for bio-imaging and solar cell applications because of some special physical properties (more)

Yan, Yueran

2012-01-01T23:59:59.000Z

8

The new barium zinc mercurides Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} - Synthesis, crystal and electronic structure  

SciTech Connect (OSTI)

The title compounds Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba{sub 3}ZnHg{sub 10} (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4{sup 4} Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl{sub 4}. The flat pyramids are connected via Hg-Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M-M distances (273-301 pm; CN 9-11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317-348 pm) to their Zn/Hg neighbours. In the structure of BaZn{sub 0.6}Hg{sub 3.4} (cubic, cI320, space group I4{sup Macron }3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba{sub 3}ZnHg{sub 10}, the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4 Multiplication-Sign 4 Multiplication-Sign 4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6){sub 4} with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4){sub 2} dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb{sub 3}Hg{sub 20} applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic (as obtained from FP-LAPW band structure calculations) and the coordination number of 16 for all Ba cations relate the two title compounds. - Graphical abstract: Six of the 64 small sub-cubes of three types (A, B, C) forming the unit cell of the Hg-rich mercuride BaZn{sub 0.6}Hg{sub 3.4}. Highlights: Black-Right-Pointing-Pointer Two new Hg-rich Ba mercurides, both synthesized from the elements in pure phase. Black-Right-Pointing-Pointer BaZn{sub 0.6}HgG{sub 3.4} and Ba{sub 3}ZnHg{sub 10} with new complex structure types. Black-Right-Pointing-Pointer Structure relation to other complex cubic intermetallics. Black-Right-Pointing-Pointer Discussion of covalent and metallic bonding aspects, as found by the structure features and band structure calculations.

Schwarz, Michael; Wendorff, Marco [Institut fuer Anorganische und Analytische Chemie, University of Freiburg, Albertstr. 21, D-79104 Freiburg (Germany)] [Institut fuer Anorganische und Analytische Chemie, University of Freiburg, Albertstr. 21, D-79104 Freiburg (Germany); Roehr, Caroline, E-mail: caroline@ruby.chemie.uni-freiburg.de [Institut fuer Anorganische und Analytische Chemie, University of Freiburg, Albertstr. 21, D-79104 Freiburg (Germany)] [Institut fuer Anorganische und Analytische Chemie, University of Freiburg, Albertstr. 21, D-79104 Freiburg (Germany)

2012-12-15T23:59:59.000Z

9

Si, CdTe and CdZnTe radiation detectors for imaging applications.  

E-Print Network [OSTI]

??The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy (more)

Schulman, Tom

2006-01-01T23:59:59.000Z

10

Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process  

SciTech Connect (OSTI)

An extraordinary shape of the capacitance-voltage characteristics of CdTe-CdHgTe structures has been detected; these characteristics include a specific 'hump' in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a p-type semiconductor with an acceptor concentration of 1 x 10{sup 16} cm{sup -3}; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the 'hump'; and the barrier height for holes at the CdTe-Cd{sub 0.43}Hg{sub 0.57}Te interface was determined as 0.13 eV.

Mashukov, Yu. P., E-mail: dr_mashukov@mail.ru; Mikhailov, N. N.; Vasilyev, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2010-09-15T23:59:59.000Z

11

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

145 OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA and an n-type CdHgTe alloy of uniform band gap as the base region. The optimization of solar energy conversion is conducted with respect to two constitutive para- meters : the gradient of the band gap

Boyer, Edmond

12

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail  

E-Print Network [OSTI]

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail, USA. 6.--e-mail: yonchang@uic.edu An analytical model describing the absorption behavior of Hg1-x. This model smoothly fits experimental absorption coefficients over energies ranging from the Urbach tail

Flatte, Michael E.

13

Reversible Modification of CdSe-CdS/ZnS Quantum Dot Fluorescence by Surrounding Ca2+  

E-Print Network [OSTI]

Reversible Modification of CdSe-CdS/ZnS Quantum Dot Fluorescence by Surrounding Ca2+ Ions Li Li (3-MPA) coated CdSe-CdS/ZnS core-multishell QDs when free Ca2+ ions were added to and subsequently removed from the QD solution. It was found that QD fluorescence intensity was reduced when Ca2+ ions were

Haviland, David

14

Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers  

SciTech Connect (OSTI)

We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

Hernndez-Caldern, I. [Physics Department,Cinvestav, Ave. IPN2508, 07360, Mxico City, DF. (Mexico); Salcedo-Reyes, J. C. [Thin Films Group, Physics Department, Pontificia Universidad Javeriana, Cr. 7 No. 43-82, Ed. 53, Lab. 404, Bogot, D.C. (Colombia)

2014-05-15T23:59:59.000Z

15

CdS and CdS/CdSe sensitized ZnO nanorod array solar cells prepared by a solution ions exchange process  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: CdS and CdS/CdSe quantum dots are assembled on ZnO nanorods by ion exchange process. The CdS/CdSe sensitization of ZnO effectively extends the absorption spectrum. The performance of ZnO/CdS/CdSe cell is improved by extending absorption spectrum. - Abstract: In this paper, cadmium sulfide (CdS) and cadmium sulfide/cadmium selenide (CdS/CdSe) quantum dots (QDs) are assembled onto ZnO nanorod arrays by a solution ion exchange process for QD-sensitized solar cell application. The morphology, composition and absorption properties of different photoanodes were characterized with scanning electron microscope, transmission electron microscope, energy-dispersive X-ray spectrum and Raman spectrum in detail. It is shown that conformal and uniform CdS and CdS/CdSe shells can grow on ZnO nanorod cores. Quantum dot sensitized solar cells based on ZnO/CdS and ZnO/CdS/CdSe nanocable arrays were assembled with gold counter electrode and polysulfide electrolyte solution. The CdS/CdSe sensitization of ZnO can effectively extend the absorption spectrum up to 650 nm, which has a remarkable impact on the performance of a photovoltaic device by extending the absorption spectrum. Preliminary results show one fourth improvement in solar cell efficiency.

Chen, Ling; Gong, Haibo; Zheng, Xiaopeng; Zhu, Min; Zhang, Jun [Key Laboratory of Inorganic Functional Materials in Universities of Shandong, School of Materials Science and Engineering, University of Jinan, Jinan 250022, Shandong (China); Yang, Shikuan [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802-6812 (United States); Cao, Bingqiang, E-mail: mse_caobq@ujn.edu.cn [Key Laboratory of Inorganic Functional Materials in Universities of Shandong, School of Materials Science and Engineering, University of Jinan, Jinan 250022, Shandong (China)

2013-10-15T23:59:59.000Z

16

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells  

SciTech Connect (OSTI)

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19T23:59:59.000Z

17

Development of a new electrodeposition process for plating of Zn-Ni-X (X=Cd, P) alloys. 1. Corrosion characteristics of Zn-Ni-Cd ternary alloys  

SciTech Connect (OSTI)

A new Zn-Ni-Cd plating process was developed which offers a unique way of controlling and optimizing the Ni and Cd contents in the final deposit. Zinc-nickel-cadmium alloy was deposited from a 0.5 M NiSO{sub 4} + 0.2 M ZnSO{sub 4} bath in the presence of 0.015 M CdSO{sub 4} and 1 g/L nonyl phenyl polyethylene oxide. Using this process a Zn-Ni-Cd ternary alloy, with a higher nickel content as compared to that obtained from conventional Zn-Ni baths, was synthesized. The Zn-Ni-Cd alloy coatings deposited from an electrolyte containing 0.015 M (0.3%) CdSO{sub 4} has a Zn to Ni ratio of 2.5:1. The increase in nickel content accounts for the observed decrease in the corrosion potential to a value lower than that of Cd but higher than the corrosion potential of iron. The coatings have superior corrosion resistance and barrier properties than the typical Zn-Ni and cadmium coatings. Polarization studies and electrochemical impedance spectroscopy analysis on Zn-Ni-Cd coatings show a barrier resistance that is ten times higher than that of a conventional Zn-Ni coating.

Durairajan, A.; Haran, B.S.; White, R.E.; Popov, B.N.

2000-05-01T23:59:59.000Z

18

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

19

CdCl{sub 2} treatment related diffusion phenomena in Cd{sub 1?x}Zn{sub x}S/CdTe solar cells  

SciTech Connect (OSTI)

Utilisation of wide bandgap Cd{sub 1?x}Zn{sub x}S alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd{sub 1?x}Zn{sub x}S through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl{sub 2} activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd{sub 1?x}Zn{sub x}S/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completionfully processed (CdCl{sub 2} activated), annealed only (without CdCl{sub 2} activation), and a control (without CdCl{sub 2} activation or anneal)revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl{sub 2} treatment. As a result, the initial Cd{sub 1?x}Zn{sub x}S/CdS bilayer structure was observed to unify into a single Cd{sub 1?x}Zn{sub x}S layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd{sub 1?x}Zn{sub x}S/CdTe device.

Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Clayton, A. J.; Barrioz, V.; Lamb, D. A.; Irvine, S. J. C. [Centre for Solar Energy Research (CSER), Glynd?r University, OpTIC, St. Asaph Business Park, St. Asaph LL17 0JD (United Kingdom); Taylor, A. A. [Physics Department, Durham University, Durham DH1 3LE (United Kingdom)

2014-03-14T23:59:59.000Z

20

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a  

E-Print Network [OSTI]

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a , Zhong Hea of the latest coplanar grid CdZnTe detectors, which use the third- generation coplanar grid design into the material properties as well as the charge induction uniformity of the detector. Keywords: coplanar grid, Cd

He, Zhong

22

Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te alloys  

E-Print Network [OSTI]

481 Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te cristaux de CdTe et de Cd0,96Zn0,04Te, de densité de dislocations variant entre 5 x 104 et 6 x 105 cm-2. La and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density

Paris-Sud XI, Université de

23

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells  

SciTech Connect (OSTI)

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

2014-02-03T23:59:59.000Z

24

Recycling ZnTe, CdTe, and Other Compound Semiconductors by Ambipolar Electrolysis  

E-Print Network [OSTI]

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl[subscript 2] and equimolar CdCl[subscript 2]KCl, respectively, was examined. In these melts dissolved Te is present as the ...

Osswald, Sebastian

25

Hybrid Electrochromic Fluorescent Poly(DNTD)/CdSe@ZnS Composite Films  

E-Print Network [OSTI]

Hybrid Electrochromic Fluorescent Poly(DNTD)/CdSe@ZnS Composite Films Huige Wei, Xingru Yan, Springdale, Arkansas 72764, United States ABSTRACT: Hybrid electrochromic poly(DNTD)/CdSe@ZnS quantum dots of an electrical current after the application of an appropriate electrode potential.15-17 The electrochromic

Guo, John Zhanhu

26

Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation  

E-Print Network [OSTI]

- grade their optical properties. In this paper, we report on the effects of gamma irradiationRapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation Nathan J. Withers of 137 Cs gamma irradiation on photoluminescent properties of CdSe/ZnS colloidal quantum dots

New Mexico, University of

27

A Novel Electrodeposition Process for Plating Zn-Ni-Cd Alloys Hansung Kim,a,  

E-Print Network [OSTI]

A Novel Electrodeposition Process for Plating Zn-Ni-Cd Alloys Hansung Kim,a, * Branko N. Popov Sciences Center, Albuquerque, New Mexico 87185-0834, USA Zn-Ni-Cd alloy was electrodeposited from in the literature.7-9 Typical nickel composition in the alloy is approximately 10%, and any further increase

Popov, Branko N.

28

In-situ spectroscopic ellipsometry for real time composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Spectral ellipsometry (SE) was applied to in situ composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg{sub 1{minus}x}Cd{sub x}Te layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE-Hg{sub 1{minus}x}Cd{sub x}Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE-Hg{sub 1{minus}x}Cd{sub x}Te samples having the same composition, but different void densities, have different effective dielectric functions.

Dat, R.; Aqariden, F.; Chandra, D.; Shih, H.D. [Raytheon TI Systems, Sensors and Infrared Lab., Dallas, TX (United States); Duncan, W.M. [Texas Instruments Inc., Dallas, TX (United States). Components and Materials Research Center

1998-12-31T23:59:59.000Z

29

Efficient light emitting devices utilizing CdSe(ZnS) quantum dots in organic host matrices  

E-Print Network [OSTI]

We demonstrate efficient electroluminescence from thin film structures containing core-shell CdSe(ZnS) quantum dots dispersed in molecular organic host materials. In the most efficient devices, excitons are created on the ...

Coe-Sullivan, Seth (Seth Alexander)

2002-01-01T23:59:59.000Z

30

Multichannel CdZnTe Gamma Ray Spectrometer  

SciTech Connect (OSTI)

A 3 cm{sup 3} multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

F. P. Doty; C. L. Lingren; B. A. Apotovsky; J. Brunsch; J. F. Butler; T. Collins; R. L. Conwell; S. Friesenhahn; J. Gormley; B. Pi; S. Zhao (Digirad Corp., San Diego, CA); F. L. Augustine, Augustine Engineering, Encinitas, CA; B. A. Bennet; E. Cross; R. B. James (Sandia Nat'l. Labs.)

1998-07-22T23:59:59.000Z

31

FINAL REPORT OF RESEARCH ON CuxS/ (Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS 3/77 - 9/79  

E-Print Network [OSTI]

and (Cd,Zn)S/CuxS photovoltaic cells. The approach was tothe CuxS/(Cd,Zn)S photovoltaic cell in order to betterstudying CdS/CuxS photovoltaic cells, films prepared by the

Chin, B.L.

2013-01-01T23:59:59.000Z

32

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics  

SciTech Connect (OSTI)

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, likely due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Kaspar, Tiffany C.; Droubay, Timothy C.; Jaffe, John E.

2011-12-28T23:59:59.000Z

33

Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe  

SciTech Connect (OSTI)

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

Qiu, W. C.; Wang, R.; Xu, Z. J.; Jiang, T. [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); Cheng, X. A., E-mail: xiang-ai-cheng@126.com [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, Hunan 410073 (China); Science and Technology on Electro-Optical Information Security Control Laboratory, Hebei 065201 (China)

2014-05-28T23:59:59.000Z

34

Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure  

SciTech Connect (OSTI)

An HgCdTe long-wavelength infrared focal plane array photodetector is proposed by modulating light distributions based on the photonic crystal. It is shown that a promising prospect of improving performance is better light harvest and dark current limitation. To optimize the photon field distributions of the HgCdTe-based photonic crystal structure, a numerical method is built by combining the finite-element modeling and the finite-difference time-domain simulation. The optical and electrical characteristics of designed HgCdTe mid-wavelength and long-wavelength photon-trapping infrared detector focal plane arrays are obtained numerically. The results indicate that the photon crystal structure, which is entirely compatible with the large infrared focal plane arrays, can significantly reduce the dark current without degrading the quantum efficiency compared to the regular mesa or planar structure.

Liang, Jian; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Ye, Zhenhua; Li, Zhifeng; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Liao, Lei [Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072 (China)

2014-05-14T23:59:59.000Z

35

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

36

Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals  

SciTech Connect (OSTI)

Highlights: ? Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ? From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ? Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ? The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh 160 014 (India); Sharma, Mamta [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh 160 014 (India)

2013-05-15T23:59:59.000Z

37

Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x  

SciTech Connect (OSTI)

The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

Melezhik, E. O., E-mail: emelezhik@gmail.com; Gumenjuk-Sichevska, J. V.; Sizov, F. F. [National Academy of Sciences, Lashkariev Institute of Semiconductor Physics (Ukraine)

2010-10-15T23:59:59.000Z

38

FINAL REPORT OF RESEARCH ON CuxS/ (Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS 3/77 - 9/79  

E-Print Network [OSTI]

S/(Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS 3/77 - 9/79Research on Photovoltaic Solar Energy Converters CuxSI(Cd~

Chin, B.L.

2013-01-01T23:59:59.000Z

39

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

SciTech Connect (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

40

Dissolved trace metals (Ni, Zn, Co, Cd, Pb, Al, and Mn) around the Crozet Islands, Southern Ocean  

E-Print Network [OSTI]

of trace elements such as Zn, Co, and Cd may be influenced by complexing ligands [e.g., Zn: Bruland, 1989; Ellwood and van den Berg, 2000; Co: Ellwood and van den Berg, 2001; Saito et al., 2004; Cd: Bruland, 1992

Paris-Sud XI, Universit de

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Absorption spectra of CdSe-ZnS core-shell quantum dots at high photon energies : experiment and modeling  

E-Print Network [OSTI]

Absorption spectra of CdSe-ZnS core-shell quantum dots at high photon energies : experiment spectra of CdSe-ZnS core-shell quantum dot (QD) ensembles, with average core diameters ranging from 2.6 nm. In agreement with previous reports, the absorption coefficient at energies 1 eV above the effective bandgap

Ghosh, Sandip

42

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

43

Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates  

SciTech Connect (OSTI)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

Lee, H. S.; Park, H. L.; Lee, I.; Kim, T. W. [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

2007-11-15T23:59:59.000Z

44

Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires  

E-Print Network [OSTI]

Using all atom molecular dynamics (MD) simulations, we have studied the mechanical properties of ZnS/CdS core/shell nanowires. Our results show that the coating of a few atomic layer CdS shell on the ZnS nanowire leads to a significant change in the stiffness of the core/shell nanowires compared to the stiffness of pure ZnS nanowires. The binding energy between the core and shell region decreases due to the lattice mismatch at the core-shell interface. This reduction in binding energy plays an important role in determining the stiffness of a core/shell nanowire. We have also investigated the effects of the shell on the thermal conductivity and melting behavior of the nanowires.

Mandal, Taraknath; Maiti, Prabal K

2015-01-01T23:59:59.000Z

45

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

46

NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND ZnSe  

E-Print Network [OSTI]

-frequency and wavelength- tunable radiation from the ultraviolet to the far infrared region of the spectrum. Typical optical coefficients, (iii) the crystal must resist damage at the high power densities required405 NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND Zn

Boyer, Edmond

47

Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)  

SciTech Connect (OSTI)

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 while ZnO is hexagonal wurtzite with a = 3.253 and c = 5.213 , (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an ?2 ?2 R45 configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.02.2 eV) matched well with the predicted value.

Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)] [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)] [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

2013-11-15T23:59:59.000Z

48

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

49

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

2011-12-31T23:59:59.000Z

50

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

2011-02-02T23:59:59.000Z

51

Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions  

SciTech Connect (OSTI)

We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I. [Physics Department, Cinvestav-IPN, Av. IPN 2508, 07360 Mxico, DF (Mexico)

2014-05-15T23:59:59.000Z

52

Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)  

SciTech Connect (OSTI)

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 , ZnO is hexagonal wurtzite with a = 3.253 and c = 5.213 .) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45 ?2??2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C.; Varga, Tamas

2013-08-02T23:59:59.000Z

53

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

54

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . Abstract: Band...

55

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

SciTech Connect (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

56

The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd{sub x}Hg{sub 1-x}Te  

SciTech Connect (OSTI)

Thermopower in n-Cd{sub 0.2}Hg{sub 0.8}Te (6-100 K) is studied. A large effect of drag of the charge carriers by phonons {alpha}{sub ph} is found. The influence of the magnetic field H on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component of {alpha}{sub ph}. The data are interpreted in the context of the theory taking into account the effect of H on thermopower {alpha}{sub ph}, in which parameter A({epsilon}) proportional to the static force of the drag effect is introduced. By the experimental data {alpha}{sub ph}(T, H), T, and H dependences A({epsilon}) are determined. It is shown that, as H increases, A({epsilon}) sharply decreases. This explains a decrease in {alpha}{sub ph} in the magnetic field, power index k in dependence {alpha}{sub ph} {proportional_to} T{sup -}{kappa}, and narrowing the region of manifestation of the drag effect. It is established that at classically high fields, the drag effect in n-Cd{sub 0.2}Hg{sub 0.8}Te does not vanish.

Aliyev, S. A.; Zulfigarov, E. I.; Selim-Zade, R. I.; Agayev, Z. F., E-mail: agayevz@rambler.ru [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-09-15T23:59:59.000Z

57

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

58

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms  

DOE Patents [OSTI]

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

Hoffbauer, Mark A. (Los Alamos, NM); Prettyman, Thomas H. (Los Alamos, NM)

2001-01-01T23:59:59.000Z

59

Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe  

SciTech Connect (OSTI)

The spectral distribution of quantum detection efficiency of X- and {gamma}-ray Schottky diodes based on semi-insulating CdTe or Cd{sub 0.9}Zn{sub 0.1}Te crystals is substantiated and obtained in analytical form. It is shown that the width of the space charge region (SCR) of 6-40 {mu}m at zero bias in CdTe (Cd{sub 0.9}Zn{sub 0.1}Te) Schottky diode is optimal for detecting radiation in the photon energy range above 5-10 keV. Based on the Poisson equation, the relationship between the SCR width and the composition of impurities and the degree of their compensation are investigated. It is shown that the presence of deep levels in the bandgap leads to a considerable increase in space charge density and electric field strength near the crystal surface. However, this effect contributes a small error in the determination of the SCR width using the standard formula for the Schottky diode. It is also shown that the concentration of uncompensated impurities in CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals within the 4 Multiplication-Sign 10{sup 11}-10{sup 13} cm{sup -3} range is optimal for the detection efficiency of X- and {gamma}-rays in the photon high-energy range. The record-high values of energy resolution have been obtained in the spectra of {sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs isotopes measured using CdTe crystals with Schottky diodes because the concentration of uncompensated donors in the CdTe crystals (1-2) Multiplication-Sign 10{sup 12} cm{sup -3} falls on an interval of maximum detection efficiency. In the spectrum of {sup 57}Co isotope, the limiting energy resolution has been achieved.

Kosyachenko, L. A.; Melnychuk, S. V.; Sklyarchuk, V. M.; Maslyanchuk, O. L.; Sklyarchuk, O. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Aoki, T. [Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan); Lambropoulos, C. P. [Technological Educational Institute of Chalkida, Psahna, Evia GR 34400 (Greece); Gnatyuk, V. A. [Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Grushko, E. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan)

2013-02-07T23:59:59.000Z

60

Structure and red shift of optical band gap in CdOZnO nanocomposite synthesized by the sol gel method  

SciTech Connect (OSTI)

The structure and the optical band gap of CdOZnO nanocomposites were studied. Characterization using X-ray diffraction (XRD), transmission electron microscopy (TEM) and diffuse reflectance spectroscopy (DRS) analysis confirms that CdO phase is present in the nanocomposites. TEM analysis confirms the formation of spheroidal nanoparticles and nanorods. The particle size was calculated from DebeySherrer?s formula and corroborated by TEM images. FTIR spectroscopy shows residual organic materials (aromatic/Olefinic carbon) from nanocomposites surface. CdO content was modified in the nanocomposites in function of polyvinylalcohol (PVA) added. The optical band gap is found to be red shift from 3.21 eV to 3.11 eV with the increase of CdO content. Photoluminescence (PL) measurements reveal the existence of defects in the synthesized CdOZnO nanocomposites. - Graphical abstract: Optical properties of ZnO, CdO and ZnO/CdO nanoparticles. Display Omitted - Highlights: TEM analysis confirms the presence of spherical nanoparticles and nanorods. The CdO phase is present in the nanocomposites. The band gap of the CdOZnO nanocomposites is slightly red shift with CdO content. PL emission of CdOZnO nanocomposite are associated to structural defects.

Mosquera, Edgar, E-mail: edemova@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Fsicas y Matemticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile); Pozo, Ignacio del, E-mail: ignacio.dpf@gmail.com [Facultad de Ciencias Naturales, Matemticas y del Medio Ambiente, Universidad Tecnolgica Metropolitana, Av. Jos Pedro Alessandri 1242, Santiago (Chile); Morel, Mauricio, E-mail: mmorel@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Fsicas y Matemticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile)

2013-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

InAs(ZnCdS) Quantum Dots Optimized for Biological Imaging in the Near-Infrared  

E-Print Network [OSTI]

We present the synthesis of InAs quantum dots (QDs) with a ZnCdS shell with bright and stable emission in the near-infrared (NIR, 700?900 nm) region for biological imaging applications. We demonstrate how NIR QDs can image ...

Allen, Peter M.

62

Development of ZnNiCd coatings by pulse electrodeposition process Prabhu Ganesan, Swaminatha P. Kumaraguru, Branko N. Popov  

E-Print Network [OSTI]

Development of ZnNiCd coatings by pulse electrodeposition process Prabhu Ganesan, Swaminatha P form 22 August 2006 Available online 6 October 2006 Abstract A pulse electrodeposition process. An increase in average current density resulted in a decrease in both nickel and cadmium content in the alloy

Popov, Branko N.

63

Effects of Temperature on the Relative Toxicities of Cd, Cu, Pb, and Zn to Folsomia candida (Collembola)  

E-Print Network [OSTI]

for cadmium, copper, lead, and zinc were determined for juvenile production of Folsomia candida Willem, 1902-1 ) for cadmium, copper, and zinc were similar at both 20 and 15°C (20°C: Cd, 590; Cu, 700; Zn, 900, 2790; 15°C: Pb, 1570). In aerially contaminated field sites adjacent to primary zinc smelters, zinc

Hopkin, Steve

64

Polarimetric performance of a Laue lens gamma-ray CdZnTe focal plane prototype  

SciTech Connect (OSTI)

A gamma-ray telescope mission concept [gamma ray imager (GRI)] based on Laue focusing techniques has been proposed in reply to the European Space Agency call for mission ideas within the framework of the next decade planning (Cosmic Vision 2015-2025). In order to optimize the design of a focal plane for this satellite mission, a CdZnTe detector prototype has been tested at the European Synchrotron Radiation Facility under an {approx}100% polarized gamma-ray beam. The spectroscopic, imaging, and timing performances were studied and in particular its potential as a polarimeter was evaluated. Polarization has been recognized as being a very important observational parameter in high energy astrophysics (>100 keV) and therefore this capability has been specifically included as part of the GRI mission proposal. The prototype detector tested was a 5 mm thick CdZnTe array with an 11x11 active pixel matrix (pixel area of 2.5x2.5 mm{sup 2}). The detector was irradiated by a monochromatic linearly polarized beam with a spot diameter of about 0.5 mm over the energy range between 150 and 750 keV. Polarimetric Q factors of 0.35 and double event relative detection efficiency of 20% were obtained. Further measurements were performed with a copper Laue monochromator crystal placed between the beam and the detector prototype. In this configuration we have demonstrated that a polarized beam does not change its polarization level and direction after undergoing a small angle (<1 deg.) Laue diffraction inside a crystal.

Curado da Silva, R. M. [Departmento de Fisica, Universidade de Coimbra, P-3000 Coimbra (Portugal); Center for Space Radiations, Univesite Catholique de Louvain (Belgium); Caroli, E.; Stephen, J. B.; Schiavone, F.; Donati, A.; Ventura, G. [Istituto di Astrofisica Spaziale e Fisica Cosmica-Bologna, Via Gobetti 101, I-40129 Bologna (Italy); Pisa, A.; Auricchio, N.; Frontera, F. [Dipartimento di Fisica, Universita di Ferrara, Ferrara (Italy); Del Sordo, S. [Istituto di Astrofisica Spaziale e Fisica Cosmica-Palermo, Via Ugo La Malfa 153, 90146 Palermo (Italy); Honkimaeki, V. [European Synchrotron Radiation Facility, Grenoble (France); Trindade, A. M. F. [Departmento de Fisica, Universidade de Coimbra, P-3000 Coimbra (Portugal)

2008-10-15T23:59:59.000Z

65

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents [OSTI]

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

66

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents [OSTI]

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

67

Enhanced photovoltaic performance of nanocrystalline CdTe/ZnO solar cells using sol-gel ZnO and positive bias treatment  

SciTech Connect (OSTI)

The effect of doping and porosity of the n-type ZnO layer on the performance of solution-processed, sintered p-CdTe/n-ZnO nanocrystal photovoltaic (PV) devices is investigated. Amorphous sol-gel ZnO is found to be the best candidate with overall energy conversion efficiencies above 8% obtained if the ZnO is also indium doped. We demonstrate that when such PV devices are left under forward bias (in dark or light), the device efficiency values are raised to at least 9.8%, due to a substantially increased open-circuit voltage and fill-factor. This drastic enhancement is attributed to improved band alignment at the ITO/CdTe interface. The forward-bias treatment is slowly reversed over a period of days to weeks on standing under open circuit conditions, but is readily restored with further voltage treatment. The moderate processing conditions and high efficiency of such devices demonstrate that nanocrystal-based systems are a promising technology for photovoltaics.

MacDonald, B. I. [CSIRO Materials Science and Engineering, Bayview Avenue, Clayton, Victoria 3168 (Australia); School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria 3010 (Australia); Della Gaspera, E.; Watkins, S. E.; Jasieniak, J. J., E-mail: Jacek.Jasieniak@csiro.au [CSIRO Materials Science and Engineering, Bayview Avenue, Clayton, Victoria 3168 (Australia); Mulvaney, P. [School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria 3010 (Australia)

2014-05-14T23:59:59.000Z

68

Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions  

SciTech Connect (OSTI)

{beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

Caillat, T.; Borshchevsky, A.; Fleurial, J.P.

1997-07-01T23:59:59.000Z

69

Energy Transfer Dynamics and Dopant Luminescence in Mn-Doped CdS/ZnS Core/Shell Nanocrystals  

E-Print Network [OSTI]

intensity calibration. A 370 nm light emitting diode was used as the excitation light source. . 32 Figure 9 Absorption spectra of Mn-doped CdS/ZnS nanocrystals with (sample 1, solid) and without (sample 2, dashed) Ostwald ripening with the same CdS core... with core size and shell thickness of 3.6 and ~1.8 nm, respectively. The luminescence spectra were taken using a CCD spectrometer (USB2000, Ocean Optics) without intensity calibration using a 370 nm light emitting diode as the excitation light source...

Chen, Hsiang-Yun

2012-11-13T23:59:59.000Z

70

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

71

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED A. Salavei, I. Rimmaudo, F. Piccinelli1  

E-Print Network [OSTI]

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED POLYMERS A. Salavei, I will be discussed. Keywords: Flexible Substrate, CdTe, ITO, Laser Processing, Thin Film Solar Cell 1 INTRODUCTION Thin film solar cells deposited on a flexible substrate are easier to integrate in buildings; they also

Romeo, Alessandro

72

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors:Deep-Level Transient Spectroscopy (DLTS) Measurements  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V{sub Cd} trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb{sub Cd}]{sup +}-V{sub Cd}{sup 2-}]{sup -}. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V{sub Cd}), and a deep trap at around 1.1 eV.

Bolotnikov A.; GUL, R.; KEETER, K.; RODRIGUEZ, R.; BOLOTNIKOV, A.E.; HOSSAIN, A.; CAMARDA, G.S.; KIM, K.H.; YANG, Y.; CUI, Y.; CARCELEN, V.; FRANC, J.; LI, Z.; JAMES, R.B.

2012-02-29T23:59:59.000Z

73

Pulse-shape discrimination of surface events in CdZnTe detectors for the COBRA experiment  

E-Print Network [OSTI]

Events near the cathode and anode surfaces of a coplanar grid CdZnTe detector are identifiable by means of the interaction depth information encoded in the signal amplitudes. However, the amplitudes cannot be used to identify events near the lateral surfaces. In this paper a method is described to identify lateral surface events by means of their pulse shapes. Such identification allows for discrimination of surface alpha particle interactions from more penetrating forms of radiation, which is particularly important for rare event searches. The effectiveness of the presented technique in suppressing backgrounds due to alpha contamination in the search for neutrinoless double beta decay with the COBRA experiment is demonstrated.

Matthew Fritts; Jan Tebrgge; Jrgen Durst; Joachim Ebert; Claus Gling; Thomas Gpfert; Daniel Gehre; Caren Hagner; Nadine Heidrich; Michael Homann; Tobias Kttig; Till Neddermann; Christian Oldorf; Thomas Quante; Silke Rajek; Oscar Reinecke; Oliver Schulz; Jan Timm; Bjrn Wonsak; Kai Zuber

2014-01-23T23:59:59.000Z

74

Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K  

SciTech Connect (OSTI)

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28??0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

Quitsch, Wolf; Kmmell, Tilmar; Bacher, Gerd [Werkstoffe der Elektrotechnik and CENIDE, Universitt Duisburg-Essen, Bismarckstrae 81, 47057 Duisburg (Germany); Gust, Arne; Kruse, Carsten; Hommel, Detlef [Institut fr Festkrperphysik, Universitt Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)

2014-09-01T23:59:59.000Z

75

Cadmium sulfate application to sludge-amended soils: II. Extraction of Cd, Zn, and Ma from solid phases  

SciTech Connect (OSTI)

Cadmium, Zn and Mn in eleven paired soils (one which had a history of sludge application and a control from adjacent land where sludge had not been used) were partitioned into five fractions: exchangeable, adsorbed, organically bound, carbonate bound and sulfide, by the use of KNO{sub 3}, H{sub 2}O, NaHO, EDTA and HNO{sub 3}, respectively. The data indicate that the major portion of the total metals was found in the carbonate, sulfide and organic fractions. Addition of CaCO{sub 3} caused an increase in the exchangeable + soluble fractions of added Cd in the soils, but had little effect on native or sludge derived Cd.

Mahler, R.J. (Univ. of Arkansas, Marianna (USA)); Ryan, J.A. (Environmental Protection Agency Cincinnati, OH (USA))

1988-01-01T23:59:59.000Z

76

COMPACT CdZnTe-BASED GAMMA CAMERA FOR PROSTATE CANCER IMAGING  

SciTech Connect (OSTI)

In this paper, we discuss the design of a compact gamma camera for high-resolution prostate cancer imaging using Cadmium Zinc Telluride (CdZnTe or CZT) radiation detectors. Prostate cancer is a common disease in men. Nowadays, a blood test measuring the level of prostate specific antigen (PSA) is widely used for screening for the disease in males over 50, followed by (ultrasound) imaging-guided biopsy. However, PSA tests have a high false-positive rate and ultrasound-guided biopsy has a high likelihood of missing small cancerous tissues. Commercial methods of nuclear medical imaging, e.g. PET and SPECT, can functionally image the organs, and potentially find cancer tissues at early stages, but their applications in diagnosing prostate cancer has been limited by the smallness of the prostate gland and the long working distance between the organ and the detectors comprising these imaging systems. CZT is a semiconductor material with wide band-gap and relatively high electron mobility, and thus can operate at room temperature without additional cooling. CZT detectors are photon-electron direct-conversion devices, thus offering high energy-resolution in detecting gamma rays, enabling energy-resolved imaging, and reducing the background of Compton-scattering events. In addition, CZT material has high stopping power for gamma rays; for medical imaging, a few-mm-thick CZT material provides adequate detection efficiency for many SPECT radiotracers. Because of these advantages, CZT detectors are becoming popular for several SPECT medical-imaging applications. Most recently, we designed a compact gamma camera using CZT detectors coupled to an application-specific-integrated-circuit (ASIC). This camera functions as a trans-rectal probe to image the prostate gland from a distance of only 1-5 cm, thus offering higher detection efficiency and higher spatial resolution. Hence, it potentially can detect prostate cancers at their early stages. The performance tests of this camera have been completed. The results show better than 6-mm resolution at a distance of 1 cm. Details of the test results are discussed in this paper.

CUI, Y.; LALL, T.; TSUI, B.; YU, J.; MAHLER, G.; BOLOTNIKOV, A.; VASKA, P.; DeGERONIMO, G.; O'CONNOR, P.; MEINKEN, G.; JOYAL, J.; BARRETT, J.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; POMPER, M.; CHO, S.; WEISMAN, K.; SEO, Y.; BABICH, J.; LaFRANCE, N.; AND JAMES, R.B.

2011-10-23T23:59:59.000Z

77

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched FerromagnetismWaste andAnniversary, part 2Zenoss, VersionThe Role ofZnO

78

Progress in the development of large area sub-millimeter resolution CdZnTe strip detectors  

SciTech Connect (OSTI)

The authors report progress in ongoing measurements of the performance of a sub-millimeter pitch CdZnTe strip detector developed as a prototype for astronomical instruments. Strip detectors can be used to provide two-dimensional position resolution with fewer electronic channels than pixellated arrays. Arrays of this type are under development for the position-sensitive image plane detector for a coded-aperture telescope operating in the hard x-ray range of 20--200 keV. The prototype is a 1.5 mm thick, 64 x 64 orthogonal stripe CdZnTe detector of 0.375 mm pitch in both dimensions, approximately one square inch of sensitive area. In addition to energy and spatial resolution capabilities, as reported last year, the authors demonstrate the imaging capabilities and discuss uniformity of response across an 8 x 8 stripe, 64 pixel, segment of detector. A technique for determination of the depth of photon interaction is discussed and initial results related to depth determination are presented. Issues related to the design and development of readout electronics, the packaging and production of strip detectors and the production of compact strip detector modules, including detector and readout electronics, are also discussed.

Macri, J.R.; Boykin, D.V.; Larson, K. [Univ. of New Hampshire, Durham, NH (United States). Space Science Center] [and others

1996-12-31T23:59:59.000Z

79

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region  

SciTech Connect (OSTI)

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V; Pavlovskii, V N; Yablonskii, G P; Sorokin, S V; Gronin, S V; Sedova, I V; Kop'ev, Petr S; Ivanov, Sergei V; Alanzi, M; Hamidalddin, A; Alyamani, A

2013-05-31T23:59:59.000Z

80

Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates  

SciTech Connect (OSTI)

We investigate the electroluminescence (EL) characteristics of a hybrid light-emitting diode (HyLED) with an emissive layer comprised of CdSe/Cd/ZnS core-shell nanoparticles (NPs) embedded in poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) on a plastic substrate. The EL characteristics change dramatically with increasing of the biased voltage. At low voltages, recombination of electrons and holes occurs only in the PFO film because of poor charge transfer in the PFO-CdSe/Cd/ZnS NPs composite film, while the color of the light-emitting from the HyLED changes from blue to red as the biased voltage increases from 7.5 to 17.5?V. We examine and discuss the mechanism of this color tunability.

Kwak, Kiyeol; Cho, Kyoungah, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr; Kim, Sangsig, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)] [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2014-03-10T23:59:59.000Z

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81

Abstract --An experimental small animal PET using two 3-D position sensitive CdZnTe detectors was developed and tested.  

E-Print Network [OSTI]

Abstract -- An experimental small animal PET using two 3-D position sensitive CdZnTe detectors scattering angle reconstruction are reported and discussed. I. INTRODUCTION onventional PET systems use, for molecular imaging and drug development using high resolution PET is gaining more and more interests. One

He, Zhong

82

Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors  

SciTech Connect (OSTI)

CdZnTe (CZT) is a promising medium for room-temperature gamma-ray detectors. However, the low production yield of acceptable quality crystals hampers the use of CZT detectors for gamma-ray spectroscopy. Significant efforts have been directed towards improving quality of CZT crystals to make them generally available for radiation detectors. Another way to address this problem is to implement detector designs that would allow for more accurate and predictable correction of the charge loss associated with crystal defects. In this work, we demonstrate that high-granularity position-sensitive detectors can significantly improve the performance of CZT detectors fabricated from CZT crystals with wider acceptance boundaries, leading to an increase of their availability and expected decrease in cost.

Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Marshall, M.; Roy, U.; Vernon, E.; Yang, G.; James, R. B. [Department of Non-proliferation and National Security, Brookhaven National Laboratory, Upton, New York 11793-5000 (United States); Lee, K. [Korea University, 161 Jeongneung-ro, Seongbuk-gu, Seoul, 136-855 (Korea, Republic of); Petryk, M. [State University of New York at Binghamton, Binghamton, New York 13902 (United States)

2014-06-30T23:59:59.000Z

83

Acceptor and donor production in Hg b1 s[subscript -x]Cd[subscript x]Te by neutron transmutation doping  

E-Print Network [OSTI]

remains constant during the irradiation, 4. The dopant or oduced i'rom the decay of the pr oduct isot. ope is stable, 5. The effect of bur nup of the product isotopes and the dopants is negligible. With these assumptions and approximations one has... amounts such as Te and Te, and with products arri tting gamma rays with approximately the same ener gy, theoretical methods wer e developed for deter mining acceptor and donor production levels in Hg& xCdxTe based on the simultaneous irradiation of a...

Seager, Kevin Douglas

1985-01-01T23:59:59.000Z

84

A series of M-M' heterometallic coordination polymers: syntheses, structures and surface photoelectric properties (M=Ni/Co, M'=Cd/Zn)  

SciTech Connect (OSTI)

Four new heterometallic polymers, [NiCd(mal){sub 2}(H{sub 2}O){sub 2}]n.2nH{sub 2}O 1, [NiZn{sub 2}(Hcit){sub 2}(H{sub 2}O){sub 2}]n 2, [CoCd{sub 2}(Hcit){sub 2}(H{sub 2}O){sub 2}]n 3, [CoZn{sub 2}(Hcit){sub 2}(H{sub 2}O){sub 2}]n 4 (H{sub 2}mal=malonic acid, H{sub 4}cit=citric acid) were synthesized and characterized. The photoelectric properties of the polymers were discussed by the surface photovoltage spectroscopy (SPS). The structural analyses indicate 1 is a Ni-Cd heterometallic polymer with 3D structure bridged by the mal{sup 2-} group. 2-4 are all heterometallic polymers with 2D structures bridged by the Hcit{sup 3-} group. The results of SPS for the four polymers reveal that there are wide photovoltage response bands in the range of 300-800 nm, which indicates that they all possess photoelectric conversion properties. By the introduction of the other metals, the SPS of heterometallic polymers are broadened obviously than the SPS of monometallic complexes. Moreover, the relationships between SPS and UV-Vis absorption spectra have been discussed. -- Graphical Abstract: Four heterometallic polymers, Ni-Cd, Ni-Zn, Co-Cd, Co-Zn, were synthesized and characterized. The photoelectric properties of heterometallic polymers were discussed by SPS. The introduction of heterometallic ions will broaden the SPS of corresponded monometallic complexes. Display Omitted highlights: > Four new heterometallic coordination polymers were reported. > The surface photoelectric properties of heterometallic polymers were studied by SPS. > They all possess photoelectric conversion properties. > The SPS of heterometallic polymers are broadened than that of monometallic complexes.

Li, Lei [School of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian 116029 (China); Niu, Shu-Yun, E-mail: syniu@sohu.co [School of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian 116029 (China); Jin, Jing; Meng, Qin; Chi, Yu-Xian; Xing, Yong-Heng [School of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian 116029 (China); Zhang, Guang-Ning [Institute of Chemistry for Functionalized Materials, Liaoning Normal University, Dalian 116029 (China)

2011-05-15T23:59:59.000Z

85

Effect of annealing on the kinetic properties and band parameters of Hg{sub 1?x?y}Cd{sub x}Eu{sub y}Se semiconductor crystals  

SciTech Connect (OSTI)

The results of studies of the kinetic properties of Hg{sub 1?x?y}Cd{sub x}Eu{sub y}Se semiconductor crystals in the ranges of temperatures T = 77300 K and magnetic fields H = 0.55 kOe before and after heat treatment of the samples in Se vapors are reported. It is established that annealing of the samples in Se vapors induces a decrease in the electron concentration. From the concentration dependence of the electron effective mass at the Fermi level, the band gap, the matrix element of interband interaction, and the electron effective mass at the bottom of the conduction band are determined.

Kovalyuk, T. T., E-mail: tarik-1006@mail.ru; Maistruk, E. V.; Maryanchuk, P. D. [Chernivtsy National University (Ukraine)

2014-12-15T23:59:59.000Z

86

CD  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines AboutDecemberSteam Coal Import CostsLiquidsYearReservesm 3 (D CD ^ Q) r* o' 3 a 3 5"

87

Electronic structure and phase stability of MgTe, ZnTe, CdTe, and their alloys in the B3, B4, and B8 structures  

E-Print Network [OSTI]

Aron Walsh and Su-Huai Wei National Renewable Energy Laboratory, Golden, Colorado 80401, USA ReceivedTe. However, the Mg,Zn Te alloy undergoes a B3 to B4 transition above 88% Mg concentration and a B4 to B8 transition above 95% Mg concentration. For Mg,Cd Te, a B3 to B4 transition is predicted above 80% Mg content

Gong, Xingao

88

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

SciTech Connect (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

89

Two new Zn(II) and Cd(II) coordinastion polymers based on amino-tetrazole and phenylcarboxylate: Syntheses, topological structures and photoluminescent properties  

SciTech Connect (OSTI)

Two Zn(II) and Cd(II) compounds with the in-situ generated ligand of 5-amino-tetrazolate (atz{sup -}) were prepared from the hydrothermal reactions of the corresponding Cd or Zn(II) salts with phenylcarboxylate, and characterized by elemental analysis, IR spectroscopy, and TGA. The results of X-ray crystallographic analysis reveal that compound [Zn{sub 2}(BZA)(atz){sub 2}(OH)]{sub n} (1) (BZA=benzoic acid) presents a two-dimensional (2D) 'hcb' topological network constructed from the ZnN{sub 2}O{sub 2} tetrahedra. In compound [Cd{sub 6}(atz){sub 6}(PTA){sub 3}]{sub n} (2) (PTA=terephthalic acid), the identical [Cd{sub 3}(atz){sub 3})]{sup 3+}{sub n} clusters are connected by atz ligands to generate a 2D cationic layer, and the neighboring cationic layers are pillared by PTA giving birth to 3D network. After simplifying, the complicated 3D network of 2 can be presented as an unprecedented (4, 4, 10)-connected trinodal topology. The formations of the structures show a good example that using the combination of the in-situ generated ligand and other coligand synthetic strategy can construct interesting topological structures. The thermal stabilities and fluorescent properties of the complexes have also been studied. - Graphical abstract: Two d{sup 10} metal complexes have been synthesized by employing mixed-ligand synthetic approach. Complex 1 presents a 2D 'hcb' topological network. Complex 2 shows an unprecedented (4, 4, 10)-connected trinodal topology. Highlights: Black-Right-Pointing-Pointer Coligand synthetic strategy was applied to obtain new MOFs with useful properties. Black-Right-Pointing-Pointer Two new Zn(II) and Cd(II) complexes were constructed from the mixed-ligand. Black-Right-Pointing-Pointer Topologically, compound 2 presented an unprecedented (4, 4, 10)-connected trinodal topology. Black-Right-Pointing-Pointer The two compounds may be excellent candidates for potential photoactive material.

Liu, Dong-Sheng, E-mail: liudongsheng@jgsu.edu.cn [School of Chemistry and Chemical Engineering, Institute of Applied Chemistry, Jinggangshan University, Ji'an, Jiangxi 343009 (China) [School of Chemistry and Chemical Engineering, Institute of Applied Chemistry, Jinggangshan University, Ji'an, Jiangxi 343009 (China); College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108 (China); Sui, Yan; Chen, Weng-Tong; Huang, Jian-Gen [School of Chemistry and Chemical Engineering, Institute of Applied Chemistry, Jinggangshan University, Ji'an, Jiangxi 343009 (China)] [School of Chemistry and Chemical Engineering, Institute of Applied Chemistry, Jinggangshan University, Ji'an, Jiangxi 343009 (China); Chen, Jian-Zhong [College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108 (China)] [College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108 (China); Huang, Chang-Cang, E-mail: cchuang@fzu.edu.cn [College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108 (China)] [College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108 (China)

2012-12-15T23:59:59.000Z

90

Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd{sub x}Hg{sub 1-x}Te  

SciTech Connect (OSTI)

Results of studies of the conductivity {sigma} and the Hall coefficient R in the Cd{sub x}Hg{sub 1-x}Te crystals with x = 0.1, 0.12, 0.14, and 0.15 are analyzed in the temperature range T = 4.2-300 K and the magnetic field range B = 0.005-2.22 T. Using data on the R(B) in low and high magnetic fields and the data on {sigma}(T), electron and hole concentrations and mobilities are determined. It is shown that the electron concentration n in the studied samples is almost independent of T in the range 4.2-15 K, while as T increases, it increases according to the law n {proportional_to} T {sup r} (r > 3/2), where r = f(n, T, x). It is found that r varies from 1.7 at x = 0.1 to 3.1 at compositions with x = 0.14 and 0.15. The results for n(T) are compared with theory, taking into account nonparabolicity of the variance law for {epsilon}(T), and with the theory of impurity states in narrow-gap and zero-gap semiconductors. It is shown that the constancy of n(T) up to {approx}15 K and the strong dependence n(T) (r > 3/2) at higher temperatures are caused by the intense ionization of electrons localized at acceptor states.

Aliev, S. A.; Zulfigarov, E. I.; Selim-zade, R. I. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

91

Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy  

SciTech Connect (OSTI)

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent IIVI, IIIV and IVVI semiconductor quantum dots. Here, we use relatively unexplored IV/IIVI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial IIVI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/IIVI nanocrystals are reproducibly 13 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/IIVI nanocrystals. We expect this synthetic IV/IIVI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

2014-08-26T23:59:59.000Z

92

Linking heavy metal bioavailability (Cd, Cu, Zn and Pb) in Scots pine needles to soil properties in reclaimed mine areas  

E-Print Network [OSTI]

concentrations in mine soils. An exception was in the case of Cd in soils on sand quarry and hard coal spoil heap. Introduction Post-mining facilities such as open pit quarries, lignite mine spoil heaps, open pit sulphur mine

Battles, John

93

890 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 47, NO. 3, JUNE 2000 A Modeling Method to Calibrate the Interaction Depth in 3-D Position Sensitive CdZnTe  

E-Print Network [OSTI]

(CIAratio). In expcriments with our 3-D CdZnTe dctectors, thc photopeak area as a fuuction of the CIA ratio deviates from the expected exponential attcnuation with depth. This indicatcs that the CIA ratio is not proportional to thc true interaction depth. This paper proposes a method to calibrate the measured CIA ratio

He, Zhong

94

PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, S. Smith, A. Mascarenhas, H. Al-Thani, J. Alleman, H.S. Ullal and J. Keane  

E-Print Network [OSTI]

PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, SS/CIGS interface has been treated as a "non- interacting," or abrupt junction. There are a few reports [3 changes such as those mentioned above have not been adequately treated in further analysis of the junction

Sites, James R.

95

COMPARISON OF TRAP STATES BETWEEN CIGSS/CdS/ZnO AND Cd PE CIGSS/ZnO CELLS P.K. Johnson, A.O. Pudov, J.R. Sites  

E-Print Network [OSTI]

cost. The best photovoltaic junctions are produced when a thin CdS layer is deposited by chemical commercial photovoltaic modules. We use current-voltage, quantum efficiency, capacitance Defects - 3 1. INTRODUCTION Polycrystalline CIGS thin film photovoltaic cells are known for their high

Sites, James R.

96

CdTe Photovoltaics: Real and Perceived EHS Risks  

E-Print Network [OSTI]

-making Processes: g Cd/ton Zn (% Cd/Zn) Roast/leach/electrowinning process: 0.2 (0.008 %) Roast/blast furnace Basin: The effect of banning Cd products Cd Use & Disposal in the Rhine Basin: The effect of banning Cd products "So, the ultimate effect of banning Cd products and recycling 50% of disp

Ohta, Shigemi

97

1-Dodecane-sulfonic-acid-sodium-salt(LAS) assisted hydrothermal synthesis of Cd{sub x}Zn{sub 1-x}S solid solution as efficient photocatalysts under visible light irradiation  

SciTech Connect (OSTI)

With anionic surfactant LAS assisted, series of zinc cadmium sulfide semiconductor photocatalysts were synthesized by hydrothermal method. These products were characterized by X-ray diffraction (XRD), UV-Vis absorption spectra (UV-Vis) and scanning electron microscopy (FESEM). The photocatalytic activities of as-prepared samples were evaluated by photocatalytic hydrogen production from water under visible-light irradiation. The best synthesis parameters are: Composition 0.9:0.1 (Cd:Zn molar ratio), Temperature 160 deg. C, Hydrothermal Time 48 Hour, LAS Concentration 1.7 mmol/L, the maximum visible-light-catalytic hydrogen production rate is 161.25 {mu}mol/h (lambda>430 nm) which is higher than those of by coprecipitation method. The experiment results indicate that surfactant assisted hydrothermal method is an effective way to get highly active CdZnS solid solution photocatalyst.

Jia, B.; Guo, L. J. [State Key Laboratory of Multiphase Flow in power Engineering, Xi'an Jiaotong University (China)

2010-03-01T23:59:59.000Z

98

Drift time variations in CdZnTe detectors measured with alpha-particles: Their correlation with the detectors responses  

SciTech Connect (OSTI)

Homogeneity of properties related to material crystallinity is a critical parameter for achieving high-performance CdZnTe (CZT) radiation detectors. Unfortunately, this requirement is not always satisfied in today's commercial CZT material due to high concentrations of extended defects, in particular subgrain boundaries, which are believed to be part of the causes hampering the energy resolution and efficiency of CZT detectors. In the past, the effects of subgrain boundaries have been studied in Si, Ge and other semiconductors. It was demonstrated that subgrain boundaries tend to accumulate secondary phases and impurities causing inhomogeneous distributions of trapping centers. It was also demonstrated that subgrain boundaries result in local perturbations of the electric field, which affect the carrier transport and other properties of semiconductor devices. The subgrain boundaries in CZT material likely behave in a similar way, which makes them responsible for variations in the electron drift time and carrier trapping in CZT detectors. In this work, we employed the transient current technique to measure variations in the electron drift time and related the variations to the device performances and subgrain boundaries, whose presence in the crystals were confirmed with white beam X-ray diffraction topography and infrared transmission microscopy.

Bolotnikov A. E.; Butcher, J.; Hamade, M.; Petryk, M.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Yang, G.; and James, R.

2012-05-14T23:59:59.000Z

99

Hg System Assembly and Testing Status  

E-Print Network [OSTI]

#12;2VRVS Meeting 8 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hg Drain & Spill Ports Completed Hg drain from cylinder Hg leak sump with float switch Hg spill extraction port #12;3VRVS Meeting 8 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Local Hg Vapor Filters · Hg

McDonald, Kirk

100

Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index  

SciTech Connect (OSTI)

In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yang, Heesun [Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)

2009-10-19T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: CdTe quantum dots were fabricated using an aqueous synthesis. CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. Inside CdS shells can reduce the strain on the QDs. Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS coreshell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

102

Hg supply piping simulation Stony Brook University  

E-Print Network [OSTI]

Hg supply piping simulation (No MHD) Stony Brook University Yan Zhan Prof. Foluso Ladeinde July 2nd, 2010 #12;Outline · Hg supply piping in Muon Collider · Turbulence models for bend pipe flow · Problems need studying · Arrangements in the near future #12;Outline · Hg supply piping in Muon Collider ­ Hg

McDonald, Kirk

103

Hg Delivery System Vacuum 25 Oct 2005  

E-Print Network [OSTI]

. S. DEPARTMENT OF ENERGY V. Graves 25 Oct 2005 MERIT Mtg at MIT Oct 17-19 · During Hg delivery system to both design and operations #12;3 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY V. Graves 25 & return lines - Sump tank & all connecting ports - Hg cylinder & bellows Hg inlet Hg cylinder & Bellows

McDonald, Kirk

104

MERIT Hg System Design Update  

E-Print Network [OSTI]

tank · Multiple Hg cylinder ports #12;4 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY MERIT Princeton University Nov 17-18, 2005 #12;2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY MERIT distortion #12;3 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY MERIT Collab. Mtg Nov 17-18, 2005

McDonald, Kirk

105

Supersymmetry and {sup 198}Hg  

SciTech Connect (OSTI)

The energy spectrum and electromagnetic transition properties of the supermultiplet members with two proton fermions can be constructed using the dynamical U{sub v}(6/12) x U{sub {pi}}(6/4) extended supersymmetry. In order to investigate predictions of the two proton fermion--four neutron boson supermultiplet member {sup 198}Hg, an experiment with the HORUS cube {gamma}-ray spectrometer at the Cologne TANDEM accelerator was performed using the {sup 196}Pt({alpha},2n){sup 198}Hg reaction. By analyzing {gamma}{gamma} coincidence spectra and {gamma}{gamma} angular correlations, the required experimental data--level and decay energies, level spins and multipole mixing ratios--could be obtained. For the low-energy states, the experimental data show good agreement with theory.

Bernards, Christian; Heinze, Stefan; Jolie, Jan; Fransen, Christoph; Linnemann, Andreas; Radeck, Desiree [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln (Germany)

2009-01-28T23:59:59.000Z

106

MERIT Hg System Final Design Review  

E-Print Network [OSTI]

MERIT Hg System Final Design Review Hg Target System Operations V.B. Graves P.T. Spampinato T Facility Constraints · No overhead lifting capability within tunnel · Modularity required - Component 2 (In- beam) · Baseplate & magnet will go in beam line prior to Hg system · Blocks under magnet end

McDonald, Kirk

107

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

108

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

109

Presented at the European Material Research Society Meeting, Symposium O, Nice, France, May 29-June 2, 2006 CdTe Photovoltaics: Life Cycle Environmental Profile and Comparisons  

E-Print Network [OSTI]

from the electronic refining of copper. The Cd content of the Zn concentrate is 0.3-0.5%, and 90 are processed to remove impurities. Cd sponge from the Zn smelter (99.5%) is oxidized, and then impurities

110

Target System Operations and Hg Handling  

E-Print Network [OSTI]

CERN June 19-20, 2006 #12;2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hg System Safety RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hg System Safety Review 19-20 June 2006 Containment/vent ports will be soap- bubble checked Primary Enclosure Secondary Enclosure #12;4 OAK RIDGE NATIONAL

McDonald, Kirk

111

CERN Hg Jet System V.B. Graves  

E-Print Network [OSTI]

Collaboration Mtg 16 Feb 05 Alternative Hg Delivery System Hydraulic Fluid Cylinder (3000 psi) Hg Cylinder (1000 energy performed on piston = press*area*dist/time 11 Hyd Pump pump inefficiency 8 11 340 340 6 8 Piston Sized for 20sec jet Drain Hg Supply Hg Return Position Sensor Hydraulic Lines Hg Cylinder Vent Line #12

McDonald, Kirk

112

High Power Hg Target Conceptual Design Review  

E-Print Network [OSTI]

to Hg Hg Temp Rise Input Energy (hp) Losses Lost Energy (hp) Output Energy (hp) BTU/min BTU/min BTU/min BTU/ min KW HP BTU/min F/sec Elect Motor 60 60 hp * 5% inefficiency 3 57 127 127 2 3 Mag Coupling 5 Energy (hp) BTU/min BTU/min BTU/min BTU/ min KW HP BTU/min F/sec Elect Motor 60 60 hp * 5% inef

McDonald, Kirk

113

Electroluminescence of ZnO-based semiconductor heterostructures  

SciTech Connect (OSTI)

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

2011-01-31T23:59:59.000Z

114

HgTe-low-field Strained HgTe: a textbook 3D topological insulator  

E-Print Network [OSTI]

HgTe-low-field Strained HgTe: a textbook 3D topological insulator Clement Bouvier, Tristan Meunier martyrs 38054 Grenoble Cedex 9, France (Dated: December 9, 2011) Topological insulators can be seen-conductors and topological- insulators, other contributions make transport data more difficult to unravel. This letter

Paris-Sud XI, Universit de

115

Study of stability of ZnO nanoparticles and growth mechanisms of colloidal ZnO nanorods  

E-Print Network [OSTI]

changes. Furthermore, upon annealing, the white precipitate is recovered to wurtize ZnO. XRD and TEM are used to study the structural transformation of ZnO nanoparticles. v Using the zinc oxide spherical colloidal solution, ZnO nanorods could..., such as Si, GaAs and CdS. The applications of ZnO to the UV-emitting diodes, cathode-ray phosphors, transparent conductor, varistors, chemical sensors, UV-protection films, and ultrafast nonlinear optical devices have been performed [8]. To prepare Zn...

Lee, Kwang Jik

2006-10-30T23:59:59.000Z

116

Dipole Bands in {sup 196}Hg  

SciTech Connect (OSTI)

High spin states in {sup 196}Hg have been populated in the {sup 198}Pt({alpha},6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Msezane, B. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa); Benatar, M.; Mabala, G. K.; Mutshena, K. P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Federke, M.; Mullins, S. M. [Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Ncapayi, N. J.; Vymers, P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of the Western Cape, Private Bag X17, Belleville 7535 (South Africa)

2011-10-28T23:59:59.000Z

117

Process of [sup 196]Hg enrichment  

DOE Patents [OSTI]

A simple rate equation model shows that by increasing the length of the photochemical reactor and/or by increasing the photon intensity in said reactor, the feedstock utilization of [sup 196]Hg will be increased. Two preferred embodiments of the present invention are described, namely (1) long reactors using long photochemical lamps and vapor filters; and (2) quartz reactors with external UV reflecting films. These embodiments have each been constructed and operated, demonstrating the enhanced utilization process dictated by the mathematical model (also provided).

Grossman, M.W.; Mellor, C.E.

1993-04-27T23:59:59.000Z

118

Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films  

E-Print Network [OSTI]

-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates metallic conductivities, and relatively simple crystal structures.2,4-7 Sn doping of CdO thin films grown with the highest carrier mobilities grown to date.7 In addition, Cd2SnO4, CdIn2O4, and CdO-ZnO thin films have been

Medvedeva, Julia E.

119

High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011  

SciTech Connect (OSTI)

The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

Carmody, M.; Gilmore, A.

2011-05-01T23:59:59.000Z

120

ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2  

E-Print Network [OSTI]

) photovoltaic technology is motivated primarily by the potential to enhance solar cell current generationZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

Sites, James R.

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

U01HG004279 (D.M.M.), U01HG004261 (E.L.), U01HG004274 (S.H.), and U41HG004269 (L.S.). Awards  

E-Print Network [OSTI]

.T.N.), the Indiana Genomics Initiative (T.C.K.), H. Smith and the NIDDK genomics core laboratory (B.O.), NIH R01HG

122

Hg L3 XANES Study of Mercury Methylation in Shredded  

E-Print Network [OSTI]

,indicatingbioaccumulationofmercury.Plantsamples collected at this site were also grown in nutrient solution with 1 ppm HgCl2 under (1) aerobic conditions

123

Atom-probe tomographic study of interfaces of Cu{sub 2}ZnSnS{sub 4} photovoltaic cells  

SciTech Connect (OSTI)

The heterophase interfaces between the CdS buffer layer and the Cu{sub 2}ZnSnS{sub 4} (CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573?K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

Tajima, S., E-mail: e0954@mosk.tytlabs.co.jp; Asahi, R.; Itoh, T.; Hasegawa, M.; Ohishi, K. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Isheim, D.; Seidman, D. N. [Northwestern University, Evanston, Illinois 60208-3108 (United States)

2014-09-01T23:59:59.000Z

124

Band offsets for mismatched interfaces: The special case of ZnO...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Abstract: High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal...

125

Zn3P2 and Cu2O substrates for solar energy conversion.  

E-Print Network [OSTI]

??Zinc phosphide (Zn3P2) and cuprous oxide (Cu2O) are promising and earth-abundant alternatives to traditional thin film photovoltaics materials such as CIGS, CdTe, and a-Si. We (more)

Kimball, Gregory Michael

2012-01-01T23:59:59.000Z

126

Synthesis of CdSe quantum dots for quantum dot sensitized solar cell  

SciTech Connect (OSTI)

CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

2014-04-24T23:59:59.000Z

127

Growth of superconducting Hg-1212 very-thin films  

E-Print Network [OSTI]

High quality epitaxial HgBa2CaCu2O6+delta (Hg- High 1212) films with thickness less than 100 nm have been successfully synthesized using cation-exchange process. The films show the superconducting transition up to similar to 118 K which is close...

Wu, Judy; Xie, Y. Y.; Kang, B. W.; Gapud, A. A.; Aytug, T.; Fang, L.

1999-06-01T23:59:59.000Z

128

The helium abundances in HgMn and normal stars  

E-Print Network [OSTI]

The parameter-free model of diffusion in the atmospheres of HgMn stars (Michaud 1986; Michaud et al 1979) predicts that helium should sink below the He II ionization zone in order that diffusion of other elements may take place, and that all HgMn stars should have deficits of helium in their photospheres, with a minimum deficit of 0.3 dex. In this study, the Smith & Dworetsky (1993) sample of HgMn stars and normal comparison stars is examined, and the helium abundances determined by spectrum synthesis using echelle spectra taken at Lick Observatory and the AAT. The prediction is confirmed; all HgMn stars are deficient in He by as much as 1.5 dex. Also, two HgMn stars, HR7361 and HR7664, show clear evidence of helium stratification.

M. M. Dworetsky

2004-07-26T23:59:59.000Z

129

Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance  

SciTech Connect (OSTI)

In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

Dai, Qilin; Wang, Wenyong, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Sabio, Erwin M. [Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071 (United States)

2014-05-05T23:59:59.000Z

130

Investigation of HgTe-CdTe superlattices grown by molecular beam epitaxy.  

E-Print Network [OSTI]

??[Truncated abstract] Infrared detection finds application in a wide range of fields, including remote sensing, astronomy, medicine and defence. Many of these applications, which require (more)

Hatch, Stuart D.

2010-01-01T23:59:59.000Z

131

2 Toxicity and Sources of Pb, Cd, Hg, Cr, As, and Radionuclides  

E-Print Network [OSTI]

........................................................................................... 33 2.3 Heavy Metal Pollution Sources ..................................................................................................................... 14 2.1.1 Selected Heavy Metals ...................................................................................................... 27 2.2.1 Heavy Metals in Aquifers

Volesky, Bohumil

132

Characterization of a Large Format HgCdTe on Si Focal Plane Array  

E-Print Network [OSTI]

. Keasler2 Rochester Institute of Technology 1 , Raytheon Vision Systems 2 ABSTRACT The Center for Detectors (CfD) at the Rochester Institute of Technology (RIT) and Raytheon Vision Systems (RVS) are advancing. The Center for Detectors (CfD) at the Rochester Institute of Technology (RIT) and Raytheon Vision Systems

Figer, Donald F.

133

Paleomagnetic Secular Variation (PSV), 137Cs, and Hg dating techniques  

E-Print Network [OSTI]

Portland State University Department of Geology #12;Hg-Mercury contamination dating http fission of Uranium-235 · Due to nuclear weapons testing · Highly water soluble (spreads quickly) · Half

Fountain, Andrew G.

134

Mercury nonstoichiometry of the Hg1-xBa2CuO4+ superconductor and the P(Hg)-P(O2)-T phase diagram of the Hg-Ba-Cu-O system.  

E-Print Network [OSTI]

1 Mercury nonstoichiometry of the Hg1-xBa2CuO4+ superconductor and the P(Hg)-P(O2)-T phase diagram-nonstoichiometry and exists in a certain P(Hg), P(O2) and T range. Mercury nonstoichiometry of Hg-1201 was investigated in the 923 T 1095 K; 2.0 P(Hg) 8.4 atm; 0.09 P(O2) 0.86 atm ranges. It was found that the mercury

Rudnyi, Evgenii B.

135

Active transport, substrate specificity, and methylation of Hg(II) in anaerobic bacteria  

SciTech Connect (OSTI)

The formation of methylmercury (MeHg), which is biomagnified in aquatic food chains and poses a risk to human health, is effected by some iron- and sulfate-reducing bacteria (FeRB and SRB) in anaerobic environments. However, very little is known regarding the mechanism of uptake of inorganic Hg by these organisms, in part because of the inherent difficulty in measuring the intracellular Hg concentration. By using the FeRB Geobacter sulfurreducens and the SRB Desulfovibrio desulfuricans ND132 as model organisms, we demonstrate that Hg(II) uptake occurs by active transport. We also establish that Hg(II) uptake by G. sulfurreducens is highly dependent on the characteristics of the thiols that bind Hg(II) in the external medium, with some thiols promoting uptake and methylation and others inhibiting both. The Hg(II) uptake system of D. desulfuricans has a higher affinity than that of G. sulfurreducens and promotes Hg methylation in the presence of stronger complexing thiols. We observed a tight coupling between Hg methylation and MeHg export from the cell, suggesting that these two processes may serve to avoid the build up and toxicity of cellular Hg. Our results bring up the question of whether cellular Hg uptake is specific for Hg(II) or accidental, occurring via some essential metal importer. Our data also point at Hg(II) complexation by thiols as an important factor controlling Hg methylation in anaerobic environments.

Schasfer, Jeffra [Princeton University; Rocks, Sara [Princeton University; Zheng, Wang [ORNL; Liang, Liyuan [ORNL; Gu, Baohua [ORNL; Morel, Francois M [ORNL

2011-01-01T23:59:59.000Z

136

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

137

Bioavailability of Cd, Zn and Se in two marine fish.  

E-Print Network [OSTI]

??It is valuable to study the bioavailability of trace metal in marine fish for their ecological and commercial importance. A series of experiments were conducted (more)

Zhang, Li

2007-01-01T23:59:59.000Z

138

MERIT Hg System Design V.B. Graves  

E-Print Network [OSTI]

testing · The pump equipment operates in a range of 6000 Gauss to 300 Gauss (1 Tesla = 104 Gauss) Target system must deliver a stable, unconstrained jet of Hg into a 15 Tesla field #12;4 OAK RIDGE NATIONAL · Hydraulic pump (outside secondary containment) - Pump, motor, reservoir - Proportional, directional control

McDonald, Kirk

139

Mother-embryo isotope (15 C) fractionation and mercury (Hg)  

E-Print Network [OSTI]

used to investigate the trophic ecology, foraging habitats and heavy metal contamination). Consequently, Hg concentrations are important to monitor because of the toxicity of this metal. In order of this element in muscle and liver. Key words: sharks; stable isotopes; trace metal; maternal influence. hal

Paris-Sud XI, Université de

140

The new Hg-rich barium indium mercurides BaIn{sub x}Hg{sub 7?x} (x=3.1) and BaIn{sub x}Hg{sub 11?x} (x=02.8)  

SciTech Connect (OSTI)

The title compounds BaIn{sub x}Hg{sub 7?x} (x=3.1(1)) and BaIn{sub x}Hg{sub 11?x} (x=02.8) were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures have been determined using single crystal X-ray data. BaIn{sub x}Hg{sub 7?x} (x=3.1(1)) crystallizes in a new structure type (orthorhombic, oC16, space group Cmmm: a=512.02(1), b=1227.68(3), c=668.61(2) pm, Z=2, R1=0.0311). In the structure, the atoms of the three crystallographically different mixed In/Hg positions form planar nets of four-, six- and eight-membered rings. These nets are shifted against each other such that the four-membered rings form empty distorted cubes. The cubes are connected via common edges, corners and folded ladders, which are also found in BaIn{sub 2}/BaHg{sub 2} (KHg{sub 2} structure type) and BaIn (?-NaHg type). The Ba atoms are centered in the eight-membered rings and exhibit an overall coordination number of 20. The [BaM{sub 20}] polyhedra and twice as many distorted [M{sub 8}] cubes tesselate the space. BaIn{sub 2.8}Hg{sub 8.2} (cubic, cP36, space group Pm3{sup }m, a=961.83(1) pm, Z=3, R1=0.0243) is the border compound of the phase width BaIn{sub x}Hg{sub 11?x} of the rare BaHg{sub 11} structure type. In the structure, ideal [M{sub 8}] cubes (at the corners of the unit cell) and BaM{sub 20} polyhedra (at the edges of the unit cell) represent the building blocks comparable to the other new In mercuride. In accordance with the increased In/Hg content, additional M-pure regions appear: the center of the unit cell contains a huge [Hg(1)M(2){sub 12}M(3,4){sub 32}] polyhedron, a Hg-centered cuboctahedron of In/Hg atoms surrounded by a capped cantellated cube of 32 additional M atoms. For both structure types, the bonding situation and the coloring, i.e. the In/Hg distribution of the polyanionic network, are discussed considering the different sizes of the atoms and the charge distribution (Bader AIM charges), which have been calculated within the framework of FP-LAPW density functional theory. - Graphical abstract: BaIn{sub 2.6}Hg{sub 4.4}: distorted cubes [(In/Hg){sub 8}] (green, like in BaHg{sub 11}), folded ladders (violet, like in BaIn, BaHg{sub 2} and BaIn{sub 2}) and Ba coordination polyhedra [Ba(In/Hg){sub 20}] (blue, like in BaHg{sub 11}). - Highlights: The Hg-rich In-mercuride BaIn{sub 3.1}Hg{sub 3.9} crystallizes with a singular structure type. The phase width of the BaHg{sub 11} structure in BaIn{sub x}Hg{sub 11-x} ends at x=2.8. The relations of both compounds with other alkaline-earth mercurides are outlined. The Hg/In coloring of the polyanion is discussed considering the structure features. Bonding aspects are explored using band structure calculations.

Wendorff, Marco; Schwarz, Michael; Rhr, Caroline, E-mail: caroline@ruby.chemie.uni-freiburg.de

2013-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Materials Science and Engineering A303 (2001) 1923 DC electrochemical deposition of CdSe nanorods array using  

E-Print Network [OSTI]

was then exposed to a saturated HgCl2 solution for 1 h, the oxide section separated from the aluminum sub- strate reagent [17]. In this paper, we prepared CdSe nanorods in the aqueous solution containing CdSO4 ­H2SeO3 the native oxide and washes thoroughly with distilled water, then electropolished in a mixed solution of HCl

Gao, Hongjun

142

Understanding mercury demethylation is the key to decrease the high environmental levels of the neurotoxin methyl-Hg in lakes.  

E-Print Network [OSTI]

dynamics of MeHg is the net result of three major processes: 1) formation by Hg methylation 2) degradation (demethylation) and Hg2+ reduction to Hg0 and evasion to the atmosphere. The major process of MeHg degradation is driven by UV light in surface waters. Although biotic demethylation processes are less well understood

Uppsala Universitet

143

Coadsorption of sulfate/bisulfate anions with Hg cations during Hg underpotential deposition on Au(111): An in situ x-ray diffraction study  

SciTech Connect (OSTI)

The first stage of mercury underpotential deposition on Au(111) electrodes in 0.10 M H{sub 2}SO{sub 4} containing 1.0 mM Hg{sup 2+} has been studied by synchrotron X-ray scattering techniques including grazing incidence X-ray diffraction and specular crystal truncation rod measurements. An ordered coadsorbed structure of sulfate/bisulfate anions and Hg cations was found at potentials between the first and second Hg UPD peaks (+0.80 V > E > +0.88 V vs Ag/AgCl(3 M KCl)). The coadsorption structure was found to consist of a compressed Hg honeycomb lattice with the honeycomb centers occupied by sulfate or bisulfate anions. The compression of the lattice is likely due to the formation of mercurous (Hg{sub 2}{sup 2+}) ions which have a much shorter Hg-Hg distance than that in frozen bulk Hg crystals. The net charge transferred under the first Hg UPD peak suggests that the chemical state of the species in the coadsorbed structure is likely Hg{sub 2}SO{sub 4}. Our results indicate that both the chemical state of the mercury cations and the nature of the anions are important in the resulting electrodeposited structures. 38 refs., 8 figs., 1 tab.

Li, J.; Abruna, H.D. [Cornell Univ., Ithaca, NY (United States)] [Cornell Univ., Ithaca, NY (United States)

1997-01-09T23:59:59.000Z

144

Photoinduced Oxidation of Hg0 in the Waters from the St.  

E-Print Network [OSTI]

-A induced reactions. Doubling UV irradiation did not increase the reaction rate of Hg0 photooxidation food chain. Understanding the parameters that govern Hg0 oxidation is therefore crucial to assess

Morel, François M. M.

145

On-line method of determining utilization factor in Hg-196 photochemical separation process  

DOE Patents [OSTI]

The present invention is directed to a method for determining the utilization factor [U] in a photochemical mercury enrichment process (.sup.196 Hg) by measuring relative .sup.196 Hg densities using absorption spectroscopy.

Grossman, Mark W. (Belmont, MA); Moskowitz, Philip E. (Peabody, MA)

1992-01-01T23:59:59.000Z

146

Anthropogenic and Natural Emissions of Mercury (Hg) in the northeastern United Jeffrey MacAdam Sigler  

E-Print Network [OSTI]

Abstract Anthropogenic and Natural Emissions of Mercury (Hg) in the northeastern United States impact may depend on the emission rate. Anthropogenic Hg emissions in the United States are poorly characterized. Natural Hg emissions are poorly understood worldwide, due to lack of data or measurement systems

Lee, Xuhui

147

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar  

E-Print Network [OSTI]

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag). i:ZnO/Al:ZnO transparent and conducting window bilayer was deposited by RF magnetron sputtering

Sites, James R.

148

Upconversion Luminescence of Colloidal CdS and ZnCdS Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

X Wu D Kingston K Yu AG Joly W Chen Capabilities: Spectroscopy and Diffraction NMR and EPR Facility: Radiochemistry Annex Science Theme: Energy Materials & Processes Terrestrial...

149

Upconversion Luminescence of Colloidal CdS and ZnCdS Semiconductor Quantum  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II Field Emission SEM with EDAX (For3Webinar April

150

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Films sputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-05-01T23:59:59.000Z

151

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

152

Bandgap engineering of CdxZn1xTe nanowires Keivan Davami,a  

E-Print Network [OSTI]

junction. These structures have been used in solar cells2,3 and eld effect transistors.4 Alloy nanowires device fabrication. Alloy nano- wires in various systems have been used to construct solar cells into a furnace. In a set of trial experiments, ZnTe (99.99% Aldrich) and CdTe (99.99% Aldrich) source powders

Cuniberti, Gianaurelio

153

Optical characteristics of a HgBr excilamp  

SciTech Connect (OSTI)

Optical characteristics of a coaxial HgBr excilamp on multicomponent mercury dibromide vapour mixtures with helium, nitrogen and sulfur hexafluoride are investigated under pumping by a pulse-periodic barrier discharge. Stable excilamp operation was demonstrated at a pump pulse repetition rate of 3 9 kHz. The component composition of the working system was determined, which provides a maximal average and pulsed specific radiation power of 48.8 mW cm{sup -3} and 40.6 W cm{sup -3}, respectively, at the efficiency of 7.3 % in the blue-green spectral range with the maximal radiation intensity at the wavelength of 502 nm. The reduction in the radiation power after 2.5 10{sup 6} shots is 5 %. Interpretation is given for the results of optimisation of excilamp characteristics. (optical radiation sources)

Malinina, A A; Malinin, A N; Shuaibov, A K [Uzhgorod National University, Uzhgorod (Ukraine)

2013-08-31T23:59:59.000Z

154

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications  

E-Print Network [OSTI]

ZnTe heterostructures for photovoltaic applications Joshuatoo large for optimal photovoltaic e?ciency. By using band-nanowires can be used as photovoltaic devices with organic

Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos, A. Paul

2008-01-01T23:59:59.000Z

155

Siemens AG, CT IC 4, H.-G. Zimmermann1 CORPORATETECHNOLOGY  

E-Print Network [OSTI]

Siemens AG, CT IC 4, H.-G. Zimmermann1 CORPORATETECHNOLOGY System Identification & Forecasting with Advanced Neural Networks Principles, Techniques, Applications Hans Georg Zimmermann Siemens AG Email : Hans_Georg.Zimmermann@siemens.com Siemens AG, CT IC 4, H.-G. Zimmermann2 CORPORATETECHNOLOGY . . . . ! " i ii wxw 0 w1 wn xn x1 Distinct

Schmidhuber, Juergen

156

Frequency Ratio of ${}^{199}$Hg and ${}^{87}$Sr Optical Lattice Clocks beyond the SI Limit  

E-Print Network [OSTI]

We report on a frequency ratio measurement of a ${}^{199}$Hg-based optical lattice clock referencing a ${}^{87}$Sr-based clock. Evaluations of lattice light shift, including atomic-motion-dependent shift, enable us to achieve a total systematic uncertainty of $7.2 \\times 10^{-17}$ for the Hg clock. The frequency ratio is measured to be $\

Yamanaka, Kazuhiro; Ushijima, Ichiro; Takamoto, Masao; Katori, Hidetoshi

2015-01-01T23:59:59.000Z

157

SmartHG: Energy Demand Aware Open Services for Smart Grid Intelligent Automation  

E-Print Network [OSTI]

solar panels)], for each time slot (say each hour) the DNO price policy defines an interval of energySmartHG: Energy Demand Aware Open Services for Smart Grid Intelligent Automation Enrico Tronci.prodanovic,jorn.gruber, barry.hayes}@imdea.org I. INTRODUCTION The SmartHG project [1], [2] has the goal of developing

Tronci, Enrico

158

INELASTIC NEUTRON SCATTERING SELECTION RULES OF 03B1 HgI2 M. SIESKIND  

E-Print Network [OSTI]

899 INELASTIC NEUTRON SCATTERING SELECTION RULES OF 03B1 HgI2 M. SIESKIND Laboratoire de The inelastic neutron scattering selection rules of 03B1 HgI2 in the directions 0394, 03A3 and 039B are derived Abstracts 63.20D Introduction. - Inelastic neutron scattering is a powerful technique for the determination

Boyer, Edmond

159

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

SciTech Connect (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

160

Pb(II) and Hg(II) binding to $de$ $novo$ designed proteins studied by $^{204m}$Pb- and $^{199m}$Hg-Perturbed Angular Correlation of $\\gamma$-rays (PAC) spectroscopy Clues to heavy metal toxicity  

E-Print Network [OSTI]

Pb(II) and Hg(II) binding to $de$ $novo$ designed proteins studied by $^{204m}$Pb- and $^{199m}$Hg-Perturbed Angular Correlation of $\\gamma$-rays (PAC) spectroscopy

CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Correia, J G

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Phase relations and crystal structures in the system Ce-Ni-Zn at 800 Degree-Sign C  

SciTech Connect (OSTI)

Phase relations have been established for the system Ce-Ni-Zn in the isothermal section at 800 Degree-Sign C using electron microprobe analysis and X-ray powder diffraction. Phase equilibria at 800 Degree-Sign C are characterized by a large region for the liquid phase covering most of the Ce-rich part of the diagram, whereas a Zn-rich liquid is confined to a small region near the Zn-corner of the Gibbs triangle. Whereas solubility of Ce in the binary Ni-Zn phases is negligible, mutual solubilities of Ni and Zn at a constant Ce content are large at 800 Degree-Sign C for most Ce-Zn and Ce-Ni compounds. The solid solution Ce(Ni{sub 1-x}Zn{sub x}){sub 5} with the CaCu{sub 5}-type is continuous throughout the entire section and for the full temperature region from 400 to 800 Degree-Sign C. Substitution of Zn by Ni is found to stabilize the structure of CeZn{sub 11} to higher temperatures. At 800 Degree-Sign C Ce(Ni{sub x}Zn{sub 1-x}){sub 11} (0.03{<=}x{<=}0.22) appears as a ternary solution phase. Similarly, a rather extended solution forms for Ce{sub 2}(Ni{sub x}Zn{sub 1-x}){sub 17} (0{<=}x{<=}0.53). Detailed data on atom site occupation and atom parameters were derived from X-ray structure analyses for single crystals of Ce{sub 2+y}(Ni{sub x}Zn{sub 1-x}){sub 17}, y=0.02, x=0.49 (a=0.87541(3), c=1.25410(4) nm; Th{sub 2}Zn{sub 17} type with space group R3{sup Macron }m,R{sub F{sup 2}}=0.018) and Ce(Ni{sub 0.18}Zn{sub 0.82}){sub 11} (a=1.04302(2), c=0.67624(3)nm, BaCd{sub 11} type with space group I4{sub 1}/amd, R{sub F{sup 2}}=0.049). - Graphical abstract: Ce-Ni-Zn isothermal section at 800 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Phase relations were determined for the system Ce-Ni-Zn in the section at 800 Degree-Sign C. Black-Right-Pointing-Pointer A continuous solid solution Ce(Ni{sub 1-x}Zn{sub x}){sub 5}, 0{<=}x{<=}1, forms between 400 and 800 Degree-Sign C. Black-Right-Pointing-Pointer Zn/Ni substitution stabilizes the ternary phase Ce(Zn{sub 1-x}Ni{sub x}){sub 11}, 0.03{<=}x{<=}0.22, 800 Degree-Sign C. Black-Right-Pointing-Pointer An extended solution forms for Ce{sub 2}(Ni{sub x}Zn{sub 1-x}){sub 17} (0{<=}x{<=}0.53). Black-Right-Pointing-Pointer Crystal data are given: Ce{sub 2+y}(Ni{sub x}Zn{sub 1-x}){sub 17} (Th{sub 2}Zn{sub 17}), Ce(Ni{sub 0.18}Zn{sub 0.82}){sub 11} (BaCd{sub 11}).

Malik, Z.; Grytsiv, A. [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Vienna (Austria)] [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Vienna (Austria); Rogl, P., E-mail: peter.franz.rogl@univie.ac.at [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Vienna (Austria); Giester, G. [Institute of Mineralogy and Crystallography, University of Vienna, Althanstrasse 14, A-1090 Vienna (Austria)] [Institute of Mineralogy and Crystallography, University of Vienna, Althanstrasse 14, A-1090 Vienna (Austria)

2012-10-15T23:59:59.000Z

162

Plasma spectroscopic study of an electrodeless HID lamp containing Tl and Zn  

SciTech Connect (OSTI)

Recently the electrodeless HID lamps excited by microwaves have been studied intensively. Tl is well known as a material having strong green emission lines. In this study, Tl spectra excited by microwaves were reported in the cases of Tl only and Tl + Zn. Using the Elenbaas`s method of high pressure Hg lamp, the cause of Tl continuous spectrum was examined. From the ratio of radiative intensities of two lines, an average arc temperature in the bulb was estimated. Then excitation level of the continuous emission spectrum near the 600nm wavelength was calculated from the dependence of the radiative intensities on these arc temperatures.

Takeda, Mamoru; Horii, Shigeru; Hochi, Akira [Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Lighting Research Lab.

1996-12-31T23:59:59.000Z

163

Regulatory function of cytomegalovirus-specific CD4{sup +}CD27{sup -}CD28{sup -} T cells  

SciTech Connect (OSTI)

CMV infection is characterized by high of frequencies of CD27{sup -}CD28{sup -} T cells. Here we demonstrate that CMV-specific CD4{sup +}CD27{sup -}CD28{sup -} cells are regulatory T cells (T{sub R}). CD4{sup +}CD27{sup -}CD28{sup -} cells sorted from CMV-stimulated PBMC of CMV-seropositive donors inhibited de novo CMV-specific proliferation of autologous PBMC in a dose-dependent fashion. Compared with the entire CMV-stimulated CD4{sup +} T-cell population, higher proportions of CD4{sup +}CD27{sup -}CD28{sup -} T{sub R} expressed FoxP3, TGFbeta, granzyme B, perforin, GITR and PD-1, lower proportions expressed CD127 and PD1-L and similar proportions expressed CD25, CTLA4, Fas-L and GITR-L. CMV-CD4{sup +}CD27{sup -}CD28{sup -} T{sub R} expanded in response to IL-2, but not to CMV antigenic restimulation. The anti-proliferative effect of CMV-CD4{sup +}CD27{sup -}CD28{sup -} T{sub R} significantly decreased after granzyme B or TGFbeta inhibition. The CMV-CD4{sup +}CD27{sup -}CD28{sup -} T{sub R} of HIV-infected and uninfected donors had similar phenotypes and anti-proliferative potency, but HIV-infected individuals had higher proportions of CMV-CD4{sup +}CD27{sup -}CD28{sup -} T{sub R}. The CMV-CD4{sup +}CD27{sup -}CD28{sup -} T{sub R} may contribute to the downregulation of CMV-specific and nonspecific immune responses of CMV-infected individuals.

Tovar-Salazar, Adriana; Patterson-Bartlett, Julie; Jesser, Renee [University of Colorado Denver School of Medicine, Aurora, CO (United States); Weinberg, Adriana, E-mail: Adriana.Weinberg@ucdenver.ed [University of Colorado Denver School of Medicine, Aurora, CO (United States)

2010-03-15T23:59:59.000Z

164

Effect of temperature and time on properties of Spark Plasma Sintered NiCuZn: Co ferrite  

E-Print Network [OSTI]

Effect of temperature and time on properties of Spark Plasma Sintered NiCuZn: Co ferrite K. Zehani Plasma Sintering is a powerfal method to produce fine grain dense ferrite at low temperature. However.75.Cd, 81.20.Ev, 81.40.Rs Keywords: Spark Plasma Sintering, Spinel ferrite, Grain size, Complex real

165

Angle-resolved photoemission spectroscopy study of HgBa[subscript 2]CuO[subscript 4+?  

E-Print Network [OSTI]

HgBa[subscript 2]CuO[subscript 4+?]. (Hg1201) has been shown to be a model cuprate for scattering, optical, and transport experiments, but angle-resolved photoemission spectroscopy (ARPES) data are still lacking owing to ...

Chan, M. K.

166

Fluorescence relaxation dynamics of CdSe and CdSe/CdS core/shell quantum dots  

SciTech Connect (OSTI)

Time-resolved fluorescence spectra for colloidal CdSe and CdSe/CdS core/shell quantum dots have been investigated to know their electron relaxation dynamics at the maximum steady state fluorescence intensity. CdSe core and CdSe/CdS type I core-shell materials with different shell (CdS) thicknesses have been synthesized using mercaptoacetic acid as a capping agent. Steady state absorption and emission studies confirmed successful synthesis of CdSe and CdSe/CdS core-shell quantum dots. The fluorescence shows a tri-exponential decay with lifetimes 57.39, 7.82 and 0.96 ns for CdSe quantum dots. The lifetime of each recombination decreased with growth of CdS shell over the CdSe core, with maximum contribution to fluorescence by the fastest transition.

Kaur, Gurvir; Kaur, Harmandeep [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh-160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24T23:59:59.000Z

167

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

168

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

169

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Luminescence Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Abstract: Radiation detection...

170

Thermographic analyses of the growth of Cd1-xZnxTe single crystals  

SciTech Connect (OSTI)

Bulk Cd1-xZnxTe (0Zn content causes non-monotonic dependencies in the quality of the crystals structure.

Kopach, O.V.; Bolotnikov, A.; Shcherbak, Larysa P.; Fochuk, Petro M.; and James, Ralph B.

2010-08-01T23:59:59.000Z

171

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells  

E-Print Network [OSTI]

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells A a b s t r a c ta r t i c l e i n f o Available online xxxx Keywords: Solar cells CdCl2 CdTe Thin absorbers Due to its high scalability and low production cost, CdTe solar cells have shown a very strong

Romeo, Alessandro

172

Isoscalar multipole strength in Cd-110 and Cd-116  

E-Print Network [OSTI]

Isoscalar multipole strength in 110Cd and 116Cd Y.-W. Lui, D. H. Youngblood, Y. Tokimoto, H. L. Clark, and B. John* Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 6 October 2003; published 24 March 2004... of each multi- pole are shown. The statistical errors are smaller than the data points. LUI, YOUNGBLOOD, TOKIMOTO, CLARK, AND JOHN PHYSICAL REVIEW C 69, 034611 (2004) 034611-2 FIG. 3. Strength distributions obtained for 110Cd are shown...

Lui, YW; Youngblood, David H.; Tokimoto, Y.; Clark, HL; John, B.

2004-01-01T23:59:59.000Z

173

CD54AC04, CD74AC04 HEX INVERTERS  

E-Print Network [OSTI]

°C to 125°C SOIC M Tube CD74AC04M AC04M­55°C to 125°C SOIC ­ M Tape and reel CD74AC04M96 AC04M CDIP-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance

Kretchmar, R. Matthew

174

Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation deposition  

E-Print Network [OSTI]

Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation ferrite structures. Our investigations were performed on NiZn and Zn ferrite films deposited on silicon of the blocking temperature in both NiZn and Zn ferrite systems. © 2005 American Institute of Physics. DOI: 10

McHenry, Michael E.

175

Manifold and method of batch measurement of Hg-196 concentration using a mass spectrometer  

DOE Patents [OSTI]

A sample manifold and method of its use has been developed so that milligram quantities of mercury can be analyzed mass spectroscopically to determine the .sup.196 Hg concentration to less than 0.02 atomic percent. Using natural mercury as a standard, accuracy of .+-.0.002 atomic percent can be obtained. The mass spectrometer preferably used is a commercially available GC/MS manufactured by Hewlett Packard. A novel sample manifold is contained within an oven allowing flow rate control of Hg into the MS. Another part of the manifold connects to an auxiliary pumping system which facilitates rapid clean up of residual Hg in the manifold. Sample cycle time is about 1 hour.

Grossman, Mark W. (Belmont, MA); Evans, Roger (N. Hampton, NH)

1991-01-01T23:59:59.000Z

176

Manifold and method of batch measurement of Hg-196 concentration using a mass spectrometer  

DOE Patents [OSTI]

A sample manifold and method of its use has been developed so that milligram quantities of mercury can be analyzed mass spectroscopically to determine the [sup 196]Hg concentration to less than 0.02 atomic percent. Using natural mercury as a standard, accuracy of [+-]0.002 atomic percent can be obtained. The mass spectrometer preferably used is a commercially available GC/MS manufactured by Hewlett Packard. A novel sample manifold is contained within an oven allowing flow rate control of Hg into the MS. Another part of the manifold connects to an auxiliary pumping system which facilitates rapid clean up of residual Hg in the manifold. Sample cycle time is about 1 hour. 8 figures.

Grossman, M.W.; Evans, R.

1991-11-26T23:59:59.000Z

177

CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-07-01T23:59:59.000Z

178

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

179

HOMOJONCTION CdTe PAR CROISSANCE PITAXIQUE EN PHASE VAPEUR J. MIMILA-ARROYO (*), A. BOUAZZI and G. COHEN-SOLAL  

E-Print Network [OSTI]

of the solar cells.Example of experimental data : open circuit voltage Voc = 0.62 V, short-circuit current toward the preparation and the experimental study of p-n graded band-gap CdTe-CdxHg1-xTe solar cells [1, 2]. It has been shown [3] that a gradel band-gap structure both contributes to voltage output

Boyer, Edmond

180

The Chemical Separation of Eka-Hg from CERN W Targets in view of Recent Relativistic Calculations  

E-Print Network [OSTI]

In 1971 evidence for the production of element 112 via secondary reactions in CERN W targets was obtained. The evidence was mainly based on the observation of fission fragments in Hg sources separated from the W targets, on the measured masses of the fissioning nuclei and on the assumption that element 112 (Eka-Hg) actually behaves like Hg in the chemical separation process. This assumption is analyzed in view of recent relativistic calculations of the electronic structure of element 112. It is shown that in the superheavy element region only the chemistry of element 112 is similar to that of Hg.

D. Kolb; A. Marinov; G. W. A. Newton; R. Brandt

2004-12-07T23:59:59.000Z

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181

ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes  

SciTech Connect (OSTI)

By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.

David P. Norton; Stephen Pearton; Fan Ren

2007-09-30T23:59:59.000Z

182

Patterned three-color ZnCdSeZnCdMgSe quantum-well structures for integrated full-color and white light emitters  

E-Print Network [OSTI]

. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser American Institute of Physics. S0003-6951 00 04149-8 Light emitting diodes LEDs and laser diodes LDs having

183

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance  

E-Print Network [OSTI]

, and in- deed the global operating capacity for solar photovoltaics is increasing steadily.1 CurrentlyPredicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells Appl. Phys. Lett. 105, 083906

Goddard III, William A.

184

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance.  

E-Print Network [OSTI]

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance. The majority of minority carrier lifetime (MCL) studies performed on CdS/CdTe photovoltaic (PV) devices have Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37th IEEE Photovoltaic

185

Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint  

SciTech Connect (OSTI)

Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

2012-08-01T23:59:59.000Z

186

Generation of tunable mid-IR radiation by second harmonic in a CdGeAs{sub 2} crystal  

SciTech Connect (OSTI)

Tunable mid-IR radiation is obtained during second harmonic generation of tunable CO{sub 2}-laser radiation using a CdGeAs{sub 2} crystal. Its angular tuning characteristics at the CO{sub 2}- laser wavelength, angular acceptance angle and spectral acceptance are measured. For second harmonic generation at 10.6 {mu}m, the conversion efficiency in the CdGeAs{sub 2} crystal is 90 times higher than that in the ZnGeP{sub 2} crystal.

Das, S [Laser Laboratory, Department of Physics, Burdwan University, Burdwan (India)

2012-03-31T23:59:59.000Z

187

Optical Diagnostics Hg_jet_meeting, 01-18-05 Thomas Tsang  

E-Print Network [OSTI]

Optical Diagnostics Hg_jet_meeting, 01-18-05 Thomas Tsang · tight environment · high radiation area · non-serviceable area · passive components · optics only, no active electronics · back illuminated with a single fiber laser - pulsed laser X · transmit image through flexible fiber bundle #12;Optical

McDonald, Kirk

188

H-G Diagram Based Rotor Parameters Identification for Induction Motors Thermal Monitoring  

E-Print Network [OSTI]

H-G Diagram Based Rotor Parameters Identification for Induction Motors Thermal Monitoring Mohamed: In this paper, an effective on-line method for induction motor parameter identification, especially rotor for each operating point. Computer simulations and experimental tests, carried out for a 4-kW four

Brest, Université de

189

6035 Hg(Ar) Lamp in 6058 Fiber Optic Accessory. Pencil Style Calibration Lamps  

E-Print Network [OSTI]

to that of the Hg(Ar) Lamp, which is the characteristic mercury line spectrum. Forced air-cooling (i.e. from of the handle for connection to the power supply. Table 1 Usable Wavelengths of Spectral Calibration Lamps (in.2 1079.8 1084.5 1114.3 Power Supplies; AC versus DC We offer different power supplies for different needs

Woodall, Jerry M.

190

Appendix: Mercury Emissions used in CAM-Chem/Hg model. 1. Anthropogenic emissions  

E-Print Network [OSTI]

Appendix: Mercury Emissions used in CAM-Chem/Hg model. 1. Anthropogenic emissions The anthropogenic emission of mercury is directly adopted from global mercury emission inventory [Pacyna et al., 2005]. The anthropogenic emissions are shown in annual averaged total mercury emissions. (Unit: µg/m2 /day) 2. Land

Meskhidze, Nicholas

191

creasing Hg2 concentration. After correcting for the initial shift caused by the new environment,  

E-Print Network [OSTI]

- tical density 9 4). The HgCl2 was still detected through these highly absorptive media (Fig. 3D-SWNTs and inserted into whole blood and muscle tissue. The complex was added directly to a black dye solution (op). The near-IR fluorescence of DNA-SWNTs in the dye solution exhibited the same response as SWNTs in pure

Garzione, Carmala N.

192

1. INTRODUCTION CdTe/CdS solar cells are among the most promising  

E-Print Network [OSTI]

Te/CdS SOLAR CELLS A.Romeo, A.N. Tiwari, and H. Zogg Thin Films Physics Group, Institute of Quantum ElectronicsTe/CdS thin film solar cells. The merits of different TCOs and the properties of the CdTe/CdS solar cells1. INTRODUCTION CdTe/CdS solar cells are among the most promising devices for low cost and high

Romeo, Alessandro

193

Pinning lattice: Effect of rhenium doping on the microstructural evolution from Tl-2212 to Hg-1212 films during cation exchange  

E-Print Network [OSTI]

In a cation exchange process developed recently by some of us, epitaxial HgBa2CaCu2O6 films can be obtained by diffusing volatile Tl cations out of, and simultaneously diffusing Hg cations into, the crystalline lattice of ...

Wu, Judy; Zhao, H.

2004-08-15T23:59:59.000Z

194

A CD19/Fc fusion protein for detection of anti-CD19 chimeric antigen receptors  

E-Print Network [OSTI]

buffer (Invitrogen, Carlsbad, CA. ). Protease inhibitorKit (Invitrogen, Carlsbad, CA. ) according to theactivator CD3/CD28 (Invitrogen, Carlsbad, CA) in RPMI medium

De Oliveira, Satiro N; Wang, Jiexin; Ryan, Christine; Morrison, Sherie L; Kohn, Donald B; Hollis, Roger P

2013-01-01T23:59:59.000Z

195

A CD19/Fc fusion protein for detection of anti-CD19 chimeric antigen receptors.  

E-Print Network [OSTI]

buffer (Invitrogen, Carlsbad, CA. ). Protease inhibitorKit (Invitrogen, Carlsbad, CA. ) according to theactivator CD3/CD28 (Invitrogen, Carlsbad, CA) in RPMI medium

De Oliveira, Satiro N; Wang, Jiexin; Ryan, Christine; Morrison, Sherie L; Kohn, Donald B; Hollis, Roger P

2013-01-01T23:59:59.000Z

196

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode  

SciTech Connect (OSTI)

We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2014-02-03T23:59:59.000Z

197

ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells  

DOE Patents [OSTI]

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Bhattacharya, Raghu N. (Littleton, CO)

2009-11-03T23:59:59.000Z

198

Axi-symmetrical flow reactor for [sup 196]Hg photochemical enrichment  

DOE Patents [OSTI]

The present invention is directed to an improved photochemical reactor useful for the isotopic enrichment of a predetermined isotope of mercury, especially, [sup 196]Hg. Specifically, two axi-symmetrical flow reactors were constructed according to the teachings of the present invention. These reactors improve the mixing of the reactants during the photochemical enrichment process, affording higher yields of the desired [sup 196]Hg product. Measurements of the variation of yield (Y) and enrichment factor (E) along the flow axis of these reactors indicates very substantial improvement in process uniformity compared to previously used photochemical reactor systems. In one preferred embodiment of the present invention, the photoreactor system was built such that the reactor chamber was removable from the system without disturbing the location of either the photochemical lamp or the filter employed therewith. 10 figures.

Grossman, M.W.

1991-04-30T23:59:59.000Z

199

Comparison of Self-Consistent Skyrme and Gogny Calculations for Light Hg Isotopes  

E-Print Network [OSTI]

The ground-state properties of neutron-deficient Hg isotopes have been investigated by the constrained self-consistent Hartree-Fock-Bogoliubov approach with the Skyrme and Gogny effective forces. In the case of the Skyrme interaction we h ave also applied the Hartree-Fock+BCS model with the state-dependent $\\delta$-pairing interaction. Potential energy surfaces and pairing properties have been compared for the both types of forces.

M. Warda; A. Staszczak; L. Prchniak

2011-07-05T23:59:59.000Z

200

Automated product recovery in a Hg-196 photochemical isotope separation process  

DOE Patents [OSTI]

A method of removing deposited product from a photochemical reactor used in the enrichment of [sup 196]Hg has been developed and shown to be effective for rapid re-cycling of the reactor system. Unlike previous methods relatively low temperatures are used in a gas and vapor phase process of removal. Importantly, the recovery process is understood in a quantitative manner so that scaling design to larger capacity systems can be easily carried out. 2 figs.

Grossman, M.W.; Speer, R.

1992-07-21T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

202

Spin polarized current injection through HgBr{sub 2} intercalated Bi2212 intrinsic Josephson junctions.  

SciTech Connect (OSTI)

To investigate the effect of polarized current on tunneling characteristics of intrinsic Josephson junctions (IJJs), spin-polarized and spin-degenerate current have been injected through the c-axis of HgBr{sub 2} intercalated Bi{sub 2.1}Sr{sub 1.5}Ca{sub 1.4}Cu{sub 2}O{sub 8+delta} (Bi2212) single crystals on which 10 times 10 mum{sup 2} mesas have been fabricated. These two spin conditions are achieved by depositing either Au (15 nm)/Co (80 nm)/Au (156 nm) multilayers or single Au film on HgBr{sub 2} intercalated Bi2212 with T{sub c} = 74 K followed by photolithography and Ar ion beam etching. The I-V characteristics have been measured with and without a magnetic field parallel to c-axis at 4.2 K. A fine, soft Au wire is used to make a gentle mechanical contact on the top of a particular mesa in the array. Tunneling conductance characteristics were obtained and the magnetic field dependence of sumgap voltage peaks was investigated. These peaks do not change in position with increasing magnetic field for both contact configurations. In addition, the temperature dependence of tunneling characteristics of the IJJs are obtained and existence of pseudogap feature is observed above T{sub c} for HgBr{sub 2} intercalated Bi2212.

Ozyuzer, L.; Kurter, C.; Ozdemir, M.; Zasadzinski, J. F.; Gray, K. E.; Hinks, D. G. (Materials Science Division); (Izmir Inst. of Tech.); (Illinois Inst. of Tech.)

2007-06-01T23:59:59.000Z

203

Homogeneous and Heterogeneous Reaction and Transformation of Hg and Trace Metals in Combustion Systems  

SciTech Connect (OSTI)

The overall goal of this project was to produce a working dynamic model to predict the transformation and partitioning of trace metals resulting from combustion of a broad range of fuels. The information provided from this model will be instrumental in efforts to identify fuels and conditions that can be varied to reduce metal emissions. Through the course of this project, it was determined that mercury (Hg) and arsenic (As) would be the focus of the experimental investigation. Experiments were therefore conducted to examine homogeneous and heterogeneous mercury oxidation pathways, and to assess potential interactions between arsenic and calcium. As described in this report, results indicated that the role of SO{sub 2} on Hg oxidation was complex and depended upon overall gas phase chemistry, that iron oxide (hematite) particles contributed directly to heterogeneous Hg oxidation, and that As-Ca interactions occurred through both gas-solid and within-char reaction pathways. Modeling based on this study indicated that, depending upon coal type and fly ash particle size, vaporization-condensation, vaporization-surface reaction, and As-CaO in-char reaction all play a role in arsenic transformations under combustion conditions.

J. Helble; Clara Smith; David Miller

2009-08-31T23:59:59.000Z

204

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

205

High-pressure dissociation of silver mercury iodide, Ag{sub 2}HgI{sub 4}  

SciTech Connect (OSTI)

High-pressure X-ray diffraction has been used to probe the behavior of the superionic conductor silver mercury iodide (Ag{sub 2}HgI{sub 4}) at pressures up to 5GPa and at temperatures from 295 to 370K. Significant changes in the diffraction spectra, indicative of structural transitions, are observed around 0.7 and 1.3GPa across the range of temperatures studied. The change at 0.7GPa is shown to correspond to the dissociation of silver mercury iodide into silver iodide and mercury iodide, i.e., Ag{sub 2}HgI{sub 4}->2AgI+HgI{sub 2}. The second transition, at 1.3GPa, is due to a structural phase transition within HgI{sub 2}. Rietveld analysis of the diffraction data is used to confirm and refine all the known crystal structures.

Parfitt, D.C. [Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU (United Kingdom); Hull, S. [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom)]. E-mail: s.hull@rl.ac.uk; Keen, D.A. [Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU (United Kingdom); ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom); Crichton, W. [ESRF, 6 Rue Jules Horowitz, BP 220, 38043 Grenoble CEDEX 9 (France)

2004-10-01T23:59:59.000Z

206

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles investigation  

E-Print Network [OSTI]

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles, Au, and Mo in bulk CdTe. The high symmetry Wyckoff position 4(b) is the global minimum energy enhanced the commercial viability of solar cells to generate electricity. Among them, cadmium telluride (CdTe

Khare, Sanjay V.

207

Phases of underpotentially deposited Hg on Au(111): An in situ surface X-ray diffraction study  

SciTech Connect (OSTI)

We report on an in situ surface X-ray diffraction study of the underpotential deposition (UPD) of mercury on Au(111). We have observed three UPD phases present at potentials prior to bulk mercury deposition. These phases consist of two well-ordered intermediate states and what appears to be either a fully discharged two-dimensional liquid Hg layer or a monolayer of an amorphous Hg-Au alloy. Both ordered intermediate phases have hexagonal structures with lattice vectors that are rotated 30{degree} from those of the Au(111) substrate. The first phase (phase I), present at a potential of +0.68 V, was only observed on fresh flame-annealed Au(111) electrodes and appears to be an open incommensurate structure with a lattice constant of 3.86 {+-} 0.03 A. This phase appears to be metastable since it changes to a second ordered phase (phase II) after a certain time. The second phase has a more compact lattice with a = 3.34 {+-} 0.01 A and appears to be a commensurate 2x2 structure with 2/3 of the Hg atoms at threefold hollow sites and 1/3 on atop sites. Similar to the first one, this phase is also metastable and can be transformed to a final, fully discharged, state of a two-dimensional liquid Hg layer or an amorphous Hg-Au alloy. The entire Hg UPD process, from Hg{sup 2+} to the fully discharged metallic Hg layer, agrees well with a multistep mechanism based on previous electrochemical kinetic studies on polycrystalline Au electrodes. 31 refs., 10 figs., 2 tabs.

Li, J.; Abruna, H.D. [Cornell Univ., Ithaca, NY (United States)] [Cornell Univ., Ithaca, NY (United States)

1997-04-10T23:59:59.000Z

208

Temperature Dependence of Single CdSe/ZnS Quantum Dots Luminescence Lifetime  

E-Print Network [OSTI]

, such as quantum dots (QDs), has grown dramatically. These semiconductor QDs bridge the gap between single

Paris-Sud XI, Universit de

209

Sensitivity studies of CdZnTe semiconductor detectors for the COBRA experiment.  

E-Print Network [OSTI]

??The COBRA Experiment searches for Neutrinoless Double Beta Decay. The observation of this decay would provide the absolute mass of the neutrino and clarify the (more)

Kttig, Tobias

2012-01-01T23:59:59.000Z

210

Final Report: A CdZnTe detector for MRI-compatible SPECT Systems  

SciTech Connect (OSTI)

The key objective of this project is to develop the enabling technology for future MRI-compatible nuclear (e.g. SPECT) imaging system, and to demonstrate the feasibility of performing simultaneous MR and SPECT imaging studies of the same object. During the past three years, we have developed (a) a MRI-compatible ultrahigh resolution gamma ray detector and associated readout electronics, (b) a theoretical approach for modeling the effect of strong magnetic field on SPECT image quality, and (c) a maximum-likelihood (ML) based reconstruction routine with correction for the MR-induced distortion. With this support, we have also constructed a four-head MR-compatible SPECT system and tested the system inside a 3-T clinical MR-scanner located on UI campus. The experimental results obtained with this system have clearly demonstrated that sub-500um spatial resolution can be achieved with a SPECT system operated inside a 3-T MRI scanner. During the past three years, we have accomplished most of the major objectives outlined in the original proposal. These research efforts have laid out a solid foundation the development of future MR-compatible SPECT systems for both pre-clinical and clinical imaging applications.

Meng, Ling-Jian

2012-12-27T23:59:59.000Z

211

CdSe/ZnS quantum dots based electrochemical immunoassay for the detection  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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212

Distribution of Cr, Pb, Cd, Zn, Fe and Mn in Lake Victoria sediments, East Africa  

SciTech Connect (OSTI)

The presence of many metals at trace or ultra-trace levels in the human environment has received increased global attention. Sediments as a sink for pollutants are widely recognized pollution sources and diagenesis and biochemical transformations within the sediment may mobilize pollutants posing a threat to a wider biological community. The natural (background) concentrations of heavy metals in lake sediments can be estimated either by analysis of surface sediments in non-polluted regions or by analysis of core samples antedating modern pollution. The distribution pattern of heavy metals in tropical freshwater systems has been little studied. The authors found increased concentrations of lead and other trace metals in Lake Victoria. Thus this study was initiated in order to further investigate the distribution patterns of lead and other metals in Lake Victoria.

Onyari, J.M.; Wandiga, S.O. (Univ. of Nairobi (Kenya))

1989-06-01T23:59:59.000Z

213

Band offsets for mismatched interfaces: The special case of ZnO on CdTe  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6 M. Babzien, I. Ben-Zvi, P. Study ofJ U LYOffsets at the(001).

214

RETENTION OF Cd, Cu, Pb AND Zn BY WOOD ASH, LIME AND FUME DUST  

E-Print Network [OSTI]

to immobilize metals from wastewater and soils (Viraraghavan and Rao, 1991). Various methods to remediate heavy metal contaminated soils and wastes exist, including thermal, biological, and physical/chemical treatments. However, most current treatment technologies are either too costly or only partially effective

Ma, Lena

215

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor  

SciTech Connect (OSTI)

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25T23:59:59.000Z

216

CD  

Gasoline and Diesel Fuel Update (EIA)

at electric power plants; enclosed structures that are not buildings, such as oil tanks, statues, and monuments; and dilapidated or incompleted buildings missing a roof or a...

217

CD  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6Energy, science, andAnalysis ofLink4500-CCCCCHF EnergyCCICD

218

Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe windows. Annual subcontract report, 15 Febraury 1992--14 February 1993  

SciTech Connect (OSTI)

Investigations of ZnSe/CIS solar cells are being carried out in an effort to improve the efficiencies CIS cells and to determine if ZnSe is a viable alternative to CdS as a window material. MOCVD growth of ZnSe is accomplished in a SPIRE 500XT reactor housed in the Electronic Materials Laboratory at WSU Tri-Cities by reacting a zinc adduct with H{sub 2}Se. Conductive n-type ZnSe is grown by using iodine as a dopant. Ethyliodide was mixed with helium and installed on one of the gas lines to the system. ZnSe films have been grown on CIS substrates at 200{degrees}C to 250{degrees}C. ZnO is also being deposited by MOCVD by reacting tetrahydrofuran (THF) with a zinc adduct. ZnSe/CIS heterojunctions have been studied by growing n-ZnSe films onto 2 cm x 2 cm CIS substrates diced from materials supplied by Siemens and then depositing an array of aluminum circular areas 2.8.mm in diameter on top of the ZnSe to serve as contacts. Al films are deposited with a thickness of 80 to l00 {angstrom}so that light can pass through the film, thus allowing the illuminated characteristics of the ZnSe/CIS junction to be tested. Accounting for the 20 to 25 % transmittance through the Al film into the ZnSe/CIS structure, current devices have estimated, active-area AM1.5 efficiencies of 14 %. Open circuit voltages > 500 mV are often attained.

Olsen, L C [Washington State Univ. at Tri-Cities, Richland, WA (United States)

1994-05-01T23:59:59.000Z

219

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

220

indirect LFV Stephan Lammel, Fermilab CD  

E-Print Network [OSTI]

, Fermilab CD Lepton-Photon 2005 Uppsala, June 30th Search for Higgs and New Phenomena at Colliders / #12;Lepton-Photon 2005 Stephan Lammel, Fermilab CD 2005-Jun-30, page 2/28 · Large variety of excellent-Photon 2005 Stephan Lammel, Fermilab CD 2005-Jun-30, page 3/28 Precision EWK/Top and Higgs CDF/D0 mtop went

Fermilab

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

An electrostatic nanogenerator based on ZnO/ZnS core/shell electrets with stabilized quasi-permanent charge  

SciTech Connect (OSTI)

ZnO-based nanogenerators with excellent performance and convenient functionalization are particularly desirable for self-powered technology, which is however difficult to achieve simultaneously in traditional piezoelectric ZnO nanogenerators. Here, we report a design of electrostatic ZnO nanogenerator by virtue of a type-II ZnO/ZnS core/shell nanostructure electrets, which can turn acoustic waves into electric power with an energy conversion efficiency of 2.2%. The ZnO/ZnS core/shell electrets are charged by ultraviolet irradiation with a long-term stability of the electrostatic charges under ambient condition. The electronic and atomic structure evolution in the charged ZnO/ZnS core/shell electrets are also discussed by detailed experimental and theoretical investigations. This design opens up an alternative path for fabricating robust ZnO-based nanogenerator for future nanotechnology application.

Wang, Chao; Cai, Liang; Feng, Yajuan; Chen, Lin; Yan, Wensheng, E-mail: ywsh2000@ustc.edu.cn, E-mail: zhsun@ustc.edu.cn; Liu, Qinghua; Yao, Tao; Hu, Fengchun; Pan, Zhiyun; Sun, Zhihu, E-mail: ywsh2000@ustc.edu.cn, E-mail: zhsun@ustc.edu.cn; Wei, Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)

2014-06-16T23:59:59.000Z

222

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

223

Stability Issues in Sputtered CdS/CdTe Solar Cells.  

E-Print Network [OSTI]

?? Magnetron sputtering is a well-established thin-film deposition technique which is particularly well-suited for sub-micron layers. We use this method to deposit ultra-thin CdS/CdTe layers (more)

Paudel, Naba Raj

2011-01-01T23:59:59.000Z

224

Report on International Collaboration Involving the FE Heater and HG-A Tests at Mont Terri  

SciTech Connect (OSTI)

Nuclear waste programs outside of the US have focused on different host rock types for geological disposal of high-level radioactive waste. Several countries, including France, Switzerland, Belgium, and Japan are exploring the possibility of waste disposal in shale and other clay-rich rock that fall within the general classification of argillaceous rock. This rock type is also of interest for the US program because the US has extensive sedimentary basins containing large deposits of argillaceous rock. LBNL, as part of the DOE-NE Used Fuel Disposition Campaign, is collaborating on some of the underground research laboratory (URL) activities at the Mont Terri URL near Saint-Ursanne, Switzerland. The Mont Terri project, which began in 1995, has developed a URL at a depth of about 300 m in a stiff clay formation called the Opalinus Clay. Our current collaboration efforts include two test modeling activities for the FE heater test and the HG-A leak-off test. This report documents results concerning our current modeling of these field tests. The overall objectives of these activities include an improved understanding of and advanced relevant modeling capabilities for EDZ evolution in clay repositories and the associated coupled processes, and to develop a technical basis for the maximum allowable temperature for a clay repository. The R&D activities documented in this report are part of the work package of natural system evaluation and tool development that directly supports the following Used Fuel Disposition Campaign (UFDC) objectives: ? Develop a fundamental understanding of disposal-system performance in a range of environments for potential wastes that could arise from future nuclear-fuel-cycle alternatives through theory, simulation, testing, and experimentation. ? Develop a computational modeling capability for the performance of storage and disposal options for a range of fuel-cycle alternatives, evolving from generic models to more robust models of performance assessment. For the purpose of validating modeling capabilities for thermal-hydro-mechanical (THM) processes, we developed a suite of simulation models for the planned full-scale FE Experiment to be conducted in the Mont Terri URL, including a full three-dimensional model that will be used for direct comparison to experimental data once available. We performed for the first time a THM analysis involving the Barcelona Basic Model (BBM) in a full three-dimensional field setting for modeling the geomechanical behavior of the buffer material and its interaction with the argillaceous host rock. We have simulated a well defined benchmark that will be used for codeto- code verification against modeling results from other international modeling teams. The analysis highlights the complex coupled geomechanical behavior in the buffer and its interaction with the surrounding rock and the importance of a well characterized buffer material in terms of THM properties. A new geomechanical fracture-damage model, TOUGH-RBSN, was applied to investigate damage behavior in the ongoing HG-A test at Mont Terri URL. Two model modifications have been implemented so that the Rigid-Body-Spring-Network (RBSN) model can be used for analysis of fracturing around the HG-A microtunnel. These modifications are (1) a methodology to compute fracture generation under compressive stress conditions and (2) a method to represent anisotropic elastic and strength properties. The method for computing fracture generation under compressive load produces results that roughly follow trends expected for homogeneous and layered systems. Anisotropic properties for the bulk rock were represented in the RBSN model using layered heterogeneity and gave bulk material responses in line with expectations. These model improvements were implemented for an initial model of fracture damage at the HG-A test. While the HG-A test model results show some similarities with the test observations, differences between the model results and observations remain.

Houseworth, Jim; Rutqvist, Jonny; Asahina, Daisuke; Chen, Fei; Vilarrasa, Victor; Liu, Hui-Hai; Birkholzer, Jens

2013-11-06T23:59:59.000Z

225

Crystal structure and magnetic properties and Zn substitution effects on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6}  

SciTech Connect (OSTI)

The effects of substituting Co on the spin-chain compound Sr{sub 3}Co{sub 2}O{sub 6} with Zn were investigated by synchrotron X-ray diffraction, magnetic susceptibility, isothermal magnetization, and specific heat measurements. To the best of our knowledge, this is the first report to describe the successful substitution of Co in Sr{sub 3}Co{sub 2}O{sub 6} with Zn. The substitution was carried out by a method involving high pressures and temperatures to obtain Sr{sub 3}CoZnO{sub 6}, which crystalized into a K{sub 4}CdCl{sub 6}-derived rhombohedral structure with a space group of R-3c, similar to the host compound. With the Zn substitution, the Ising-type magnetic anisotropy of the host compound remarkably reduced; the newly formed Sr{sub 3}CoZnO{sub 6} became magnetically isotropic with Heisenberg-type characteristics. This could probably be ascribed to the establishment of a different interaction pathway, Co{sup 4+}(S=1/2)OZn{sup 2+}(S=0)OCo{sup 4+}(S=1/2). Details of the magnetic properties of Zn substituted Sr{sub 3}Co{sub 2}O{sub 6} were reported. - Graphical abstract: Crystal structure of the spin-chain compound Sr{sub 3}CoZnO{sub 6} synthesized at 6 GPa. Zn atoms preferably occupy the trigonal prism sites rather than the octahedral sites. As a result, the compound is much magnetically isotropic. Highlights: Effects of substituting Co with Zn on spin-chain magnetism of Sr{sub 3}Co{sub 2}O{sub 6} were studied. High-pressure synthesis resulted in a solid solution of Sr{sub 3}CoZnO{sub 6}. Sr{sub 3}CoZnO{sub 6} showed more isotropic magnetism than the host Sr{sub 3}Co{sub 2}O{sub 6}.

Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Guo, Yanfeng, E-mail: Yangfeng.Guo@physics.ox.ac.uk [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Sun, Ying [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Matsushita, Yoshitaka [Materials Analysis Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba Ibaraki 305-0047 (Japan); Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba Ibaraki 305-0044 (Japan); Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan)

2013-08-15T23:59:59.000Z

226

1. INTRODUCTION CdTe/CdS is one of the most promising solar cell for low  

E-Print Network [OSTI]

with CdTe grown by close space sublimation, electrodeposition, spray pyrolysis, vacuum evaporation and RF conversion of CdTe layers, as well as for the intermixing of CdS-CdTe. An optimum annealing condition is required for the formation of an appropriate CdTe1-x-Sx intermixed interface. It is desirable to separately

Romeo, Alessandro

227

Newport Power Meter Drivers CD Installation Software  

E-Print Network [OSTI]

Newport Power Meter Drivers CD Installation Software Version 2.3.1 Revision Date: October 16, 2008 IMPORTANT NOTES: The USB drivers on your CD must be installed before the Newport Power Meter is connected to your PC (via USB cable). Manual: The latest manuals for the Newport Power Meters can be found

Kleinfeld, David

228

Novel Stabilization Mechanism on Polar Surfaces: ZnO(0001)-Zn Olga Dulub,1  

E-Print Network [OSTI]

r Materialphysik and Centre for Computational Materials Science, Universitat Wien, A-1090 Wien, Austria (Received identification of the stabilization mechanisms of polar ZnO surfaces and the resulting surface properties would will cancel the polarity. If the Zn-terminated surface is less positive and the O-terminated surface layer

Diebold, Ulrike

229

Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis  

SciTech Connect (OSTI)

Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

2011-12-23T23:59:59.000Z

230

Memorandum, CH2M HG Idaho, LLC, Request for Variance to Title 10 Code of Federal Regulations part 851, "Worker Safety and Health"  

Broader source: Energy.gov [DOE]

CH2M HG Idaho, LLC, Request for Variance to Title 10 Code of Federal Regulations part 851, "Worker Safety and Health"

231

Advanced Combustion Modeling with STAR-CD using Transient Flemelet...  

Broader source: Energy.gov (indexed) [DOE]

Combustion Modeling with STAR-CD using Transient Flemelet Models: TIF and TPV Advanced Combustion Modeling with STAR-CD using Transient Flemelet Models: TIF and TPV Presentation...

232

Abundance analysis of SB2 binary stars with HgMn primaries  

E-Print Network [OSTI]

We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

T. Ryabchikova

1998-05-06T23:59:59.000Z

233

Charge-carrier transport and recombination in heteroepitaxial CdTe  

SciTech Connect (OSTI)

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5??m from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650?cm{sup 2} (Vs){sup ?1} and diffusion coefficient D of 17?cm{sup 2}?s{sup ?1}. We find limiting recombination at the epitaxial film surface (surface recombination velocity S{sub surface}?=?(2.8??0.3)??10{sup 5?}cm?s{sup ?1}) and at the heteroepitaxial interface (interface recombination velocity S{sub interface}?=?(4.8??0.5)??10{sup 5?}cm?s{sup ?1}). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

Kuciauskas, Darius, E-mail: Darius.Kuciauskas@nrel.gov; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States); Colegrove, Eric; Sivananthan, S. [Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, Illinois 60612 (United States)

2014-09-28T23:59:59.000Z

234

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

SciTech Connect (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

235

Cyclotron production of {sup 61}Cu using natural Zn and enriched {sup 64}Zn targets  

SciTech Connect (OSTI)

Copper-61 ({sup 61}Cu) shares with {sup 64}Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study {sup 61}Cu was produced using the {sup 64}Zn(p,{alpha}){sup 61}Cu reaction on natural Zn or enriched {sup 64}Zn targets. The enriched {sup 64}Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30{mu}A; at 11.7, 14.5 or 17.6MeV over 30-60min. The {sup 61}Cu (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The {sup 64}Zn target material was recovered after each run, for re-use. In a direct comparison with enriched {sup 64}Zn-target results, {sup 61}Cu production using the cheaper {sup nat}Zn target proved to be an effective alternative.

Asad, A. H.; Smith, S. V.; Chan, S.; Jeffery, C. M.; Morandeau, L.; Price, R. I. [RAPID PET Labs, Medical Technology and Physics, Sir Charles Gairdner Hospital, Perth, Australia, Imaging and Applied Physics, Curtin University, Perth, Australia, and Center of Excellence in Anti-matter Matter Studies, Australian National University, Can (Australia); Brookhaven National Laboratory, Upton, NY (United States) and Center of Excellence in Anti-matter Matter Studies, Australian National University, Canberra (Australia); RAPID PET Labs, Medical Technology and Physics, Sir Charles Gairdner Hospital, Perth (Australia); RAPID PET Labs, Medical Technology and Physics, Sir Charles Gairdner Hospital, Perth (Australia); Center of Excellence in Anti-matter Matter Studies, Australian National University, Canberra, Australia, and Chemistry, University of Western Australia, Pe (Australia); RAPID PET Labs, Medical Technology and Physics, Sir Charles Gairdner Hospital, Perth (Australia); RAPID PET Labs, Medical Technology and Physics, Sir Charles Gairdner Hospital, Perth, Australia and Physics, University of Western Australia, Perth (Australia)

2012-12-19T23:59:59.000Z

236

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

237

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

238

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

1999-04-27T23:59:59.000Z

239

Acceptors in ZnO nanocrystals  

SciTech Connect (OSTI)

Zinc oxide (ZnO) has potential for a range of optoelectronic applications. In this work, we studied the defect properties of ZnO nanocrystals, grown by a solid-state pyrolytic reaction method, using IR and electron paramagnetic resonance (EPR) spectroscopy. A series of IR absorption peaks have been observed at liquid-helium temperatures. These transition lines suggest a hydrogenic acceptor with a hole binding energy of ~ 0.4 - 0.5 eV. EPR measurements in the dark showed the well-known donor line at g = 1.96, and a line at g = 2.003, which we attribute to acceptors that involve a zinc vacancy. A line at g = 2.013, only seen after exposure to light, is assigned to nonaxial zinc vacancy-hydrogen complexes. Given the current lack of suitable acceptor dopants in ZnO, vacancy complexes may provide the best route toward p-type conductivity.

Teklemichael, Samuel T.; Oo, W.M.H.; Matthew, McClusky; Walter, Eric D.; Hoyt, David W.

2011-06-09T23:59:59.000Z

240

Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and {gamma}-ray detectors  

SciTech Connect (OSTI)

Measurements of the {sup 55}Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2-3) Multiplication-Sign 10{sup 9} {Omega}cm at 300 K) have been used to determine the concentration of uncompensated donors (1-3) Multiplication-Sign 10{sup 12} cm{sup -3}. Similar measurements performed for Cd{sub 0.9}Zn{sub 0.1}Te crystals with the resistivity (3-5) Multiplication-Sign 10{sup 10} {Omega} cm at 300 K have shown that the concentration of uncompensated donors in this case is lower by approximately four orders of magnitude. The results of calculations show that, due to such a significant decrease in the concentration of uncompensated donors, the efficiency of X- and {gamma}-ray radiation detection in the photon energy range 59 to 662 keV can decrease by one-three orders of magnitude (depending on the photon energy and the lifetime of charge carriers in the space-charge region). The results obtained account for the apparent poor detecting properties of the Cd{sub 0.9}Zn{sub 0.1}Te detectors.

Kosyachenko, L. A., E-mail: lacos@chv.ukrpact.net; Sklyarchuk, V. M.; Melnychuk, S. V.; Maslyanchuk, O. L.; Grushko, E. V.; Sklyarchuk, O. V. [Chernivtsi National University (Ukraine)

2012-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

DOI : 10. 1051/jp4 :20030389 Zn speciation in  

E-Print Network [OSTI]

smelter in Northem France ( [Zn] = 6600 and as a 40 cm thick layer on a agricultural soil in 1997. zen

242

Formation of Zn-rich phyllosilicate, Zn-layered double hydroxide and hydrozincite in contaminated calcareous soils  

E-Print Network [OSTI]

Zn/Al hydrotalcite in smelter-impacted soils from northernQuantitative Zn speciation in smelter-contaminated soils byand bioavailability of zinc in a smelter contaminated soil.

Jacquat, Olivier

2009-01-01T23:59:59.000Z

243

Le gisement Ag Hg de Zgounder (Jebel Siroua, Anti-Atlas, Maroc) : un pithermal noprotrozoque de type  

E-Print Network [OSTI]

Le gisement Ag Hg de Zgounder (Jebel Siroua, Anti- Atlas, Maroc) : un épithermal néoprotérozoïque Compagnie minière de Touissit (CMT), 279, bd Zerktouni, Casablanca, Maroc Abstract The Zgounder ore deposit and more as a silver metallogenic province Résumé Le gisement argentifère de Zgounder (Anti-Atlas, Maroc

Paris-Sud XI, Université de

244

Exploiting the Higher Specificity of Silver Amalgamation: Selective Detection of Mercury(II) by Forming Ag/Hg Amalgam  

E-Print Network [OSTI]

, 32611-7200, United States *S Supporting Information ABSTRACT: Heavy metal ion pollution poses severe and biological samples. Contamination of the environment with heavy metal ions has been an important concern selective for Hg2+ and does not respond to other metal ions with up to millimolar concentration levels

Tan, Weihong

245

Demonstrating the Model Nature of the High-Temperature Superconductor HgBa2CuO4+d  

SciTech Connect (OSTI)

The compound HgBa{sub 2}CuO{sub 4+{delta}} (Hg1201) exhibits a simple tetragonal crystal structure and the highest superconducting transition temperature (T{sub c}) among all single Cu-O layer cuprates, with T{sub c} = 97 K (onset) at optimal doping. Due to a lack of sizable single crystals, experimental work on this very attractive system has been significantly limited. Thanks to a recent breakthrough in crystal growth, such crystals have now become available. Here, we demonstrate that it is possible to identify suitable heat treatment conditions to systematically and uniformly tune the hole concentration of Hg1201 crystals over a wide range, from very underdoped (T{sub c} = 47 K, hole concentration p {approx} 0.08) to overdoped (T{sub c} = 64 K, p {approx} 0.22). We then present quantitative magnetic susceptibility and DC charge transport results that reveal the very high-quality nature of the studied crystals. Using XPS on cleaved samples, we furthermore demonstrate that it is possible to obtain large surfaces of good quality. These characterization measurements demonstrate that Hg1201 should be viewed as a model high-temperature superconductor, and they provide the foundation for extensive future experimental work.

Barisic, Neven; Li, Yuan; Zhao, Xudong; Cho, Yong-Chan; Chabot-Couture, Guillaume; Yu, Guichuan; Greven, Martin; /SLAC, SSRL /Boskovic Inst., Zagreb /Stanford U., Phys. Dept. /Jilin U. /Stanford U., Appl. Phys. Dept.

2008-09-30T23:59:59.000Z

246

Gamma-ray cascade transitions from resonant neutron capture in Cd-111 and Cd-113  

SciTech Connect (OSTI)

A neutron-capture experiment on {sup nat}Cd has been carried out at DANCE. Multiple-fold coincidence {gamma}-ray spectra have been collected from J=0, 1 resonances in {sup 111}Cd and {sup 113}Cd. The cascades ending at the ground state can be described by the SLO model while the cascades ending at the 2+ states are better reproduced by the mixed SLO+KMF model.

Rusev, Gencho Y. [Los Alamos National Laboratory

2012-08-27T23:59:59.000Z

247

CD54AC08, CD74AC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES  

E-Print Network [OSTI]

SOIC M Tube CD74AC08M AC08M­55°C to 125°C SOIC ­ M Tape and reel CD74AC08M96 AC08M CDIP ­ F Tube CD54AC-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance

Kretchmar, R. Matthew

248

CD54AC02, CD74AC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATES  

E-Print Network [OSTI]

to 125°C SOIC ­ M Tape and reel CD74AC02M96 AC02M CDIP ­ F Tube CD54AC02F3A CD54AC02F3A Package drawings-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance

Kretchmar, R. Matthew

249

CD54AC32, CD74AC32 QUADRUPLE 2-INPUT POSITIVE-OR GATES  

E-Print Network [OSTI]

Tape and reel CD74AC32M96 AC32M CDIP ­ F Tube CD54AC32F3A CD54AC32F3A Package drawings, standard-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance

Kretchmar, R. Matthew

250

CD54ACT00, CD74ACT00 QUADRUPLE 2-INPUT POSITIVE-NAND GATES  

E-Print Network [OSTI]

CD74ACT00E 55°C to 125°C SOIC M Tube CD74ACT00M ACT00M­55°C to 125°C SOIC ­ M Tape and reel CD74ACT00-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance

Kretchmar, R. Matthew

251

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum, (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

252

Twinning effect on photoluminescence spectra of ZnSe nanowires  

SciTech Connect (OSTI)

Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

Xu, Jing; Wang, Chunrui, E-mail: crwang@dhu.edu.cn; Wu, Binhe; Xu, Xiaofeng [Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620 (China); Chen, Xiaoshuang [Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China); Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul [Department of Physics and Astronomy, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-747 (Korea, Republic of)

2014-11-07T23:59:59.000Z

253

Green emission in carbon doped ZnO films  

SciTech Connect (OSTI)

The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

Tseng, L. T.; Yi, J. B., E-mail: jiabao.yi@unsw.edu.au; Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S. [School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia); Fan, H. M. [School of Chemical Engineering, Northwest University, Xi'an 710069 (China); Herng, T. S.; Ding, J. [Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore); Ionescu, M. [Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)

2014-06-15T23:59:59.000Z

254

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

255

Removal of elemental mercury (Hg(0)) by nanosized V{sub 2}O{sub 5}/TiO{sub 2} catalysts  

SciTech Connect (OSTI)

Novel reactive nanosized V{sub 2}O{sub 5}/TiO{sub 2} catalysts (aerogel, xerogel, and impregnated catalysts) for the removal of Hg{sup 0} and their synthesis methods have been introduced in this research. Aerogel catalyst has the highest surface area among the catalysts synthesized in this research and contained reactive monovanadates on its surfaces resulting in higher reactivity for the Hg{sup 0} removal than impregnated and selective catalytic reduction catalysts. XPS analyses on the surfaces of nanosized catalysts after the removal of Hg{sup 0} suggest that adsorbed Hg{sup 0} oxidatively transformed to Hg{sup O} by surface vanadates (mono- and poly vanadates), consistent with the Mars-Maessen mechanism. Early column breakthrough has been observed at temperatures above 300{sup o}C due mainly to the desorption of Hg{sup 0} from the catalyst surfaces. The decrease in Hg{sup 0} concentration and increase in catalyst content in a column reactor have increased the removal of Hg{sup 0}, indicating that the removal is a heterogeneous surface-limited reaction. At 400{sup o}C, the catalysts under air flow have shown a higher Hg{sup 0} removal because gas-phase oxygen from the flow could provide an oxygen-rich environment for producing more oxidized vanadate species on their surfaces. No significant difference in the Hg{sup 0} removal between different gas types (nitrogen and air) has been observed at 100{sup o}C. 27 refs., 5 figs.

Lee, W.; Bae, G.N. [Korea Advanced Institute of Science and Technology, Daejeon (Republic of Korea)

2009-03-01T23:59:59.000Z

256

Thermoelectric properties of ZnSb films grown by MOCVD  

SciTech Connect (OSTI)

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

Venkatasubramanian, R.; Watko, E.; Colpitts, T.

1997-07-01T23:59:59.000Z

257

Defect induced ferromagnetism in undoped ZnO nanoparticles  

SciTech Connect (OSTI)

Undoped ZnO nanoparticles (NPs) with size ?12?nm were produced using forced hydrolysis methods using diethylene glycol (DEG) [called ZnO-I] or denatured ethanol [called ZnO-II] as the reaction solvent; both using Zn acetate dehydrate as precursor. Both samples showed weak ferromagnetic behavior at 300?K with saturation magnetization M{sub s}?=?0.077 0.002 memu/g and 0.088 0.013 memu/g for ZnO-I and ZnO-II samples, respectively. Fourier transform infrared (FTIR) spectra showed that ZnO-I nanocrystals had DEG fragments linked to their surface. Photoluminescence (PL) data showed a broad emission near 500?nm for ZnO-II which is absent in the ZnO-I samples, presumably due to the blocking of surface traps by the capping molecules. Intentional oxygen vacancies created in the ZnO-I NPs by annealing at 450?C in flowing Ar gas gradually increased M{sub s} up to 90?min and x-ray photoelectron spectra (XPS) suggested that oxygen vacancies may have a key role in the observed changes in M{sub s}. Finally, PL spectra of ZnO showed the appearance of a blue/violet emission, attributed to Zn interstitials, whose intensity changes with annealing time, similar to the trend seen for M{sub s}. The observed variation in the magnetization of ZnO NP with increasing Ar annealing time seems to depend on the changes in the number of Zn interstitials and oxygen vacancies.

Rainey, K.; Chess, J.; Eixenberger, J.; Tenne, D. A.; Hanna, C. B.; Punnoose, A., E-mail: apunnoos@boisestate.edu [Department of Physics, Boise State University, Boise, Idaho 83725 (United States)

2014-05-07T23:59:59.000Z

258

Current Transients in CdS/CdTe Solar Cells Alan Fahrenbruch  

E-Print Network [OSTI]

a red (630 nm) LED with an output equivalent to 1 sun for light data. Red (630 nm) and blue (470 nmCurrent Transients in CdS/CdTe Solar Cells Alan Fahrenbruch Colorado State University Department is completely reversible, with a decay to the DS state. The current/time data were taken using an HP 7090A A

Sites, James R.

259

Investigation of CdS Nanowires and Planar Films for Enhanced Performance as Window Layers in CdS-CdTe Solar Cell Devices.  

E-Print Network [OSTI]

??Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power (more)

Chen, Jianhao

2013-01-01T23:59:59.000Z

260

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability  

E-Print Network [OSTI]

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells PV coatings based on CdTe. ...for transparent window PV:...for transparent window PV: , p g · The X26 for ultrathin CdTe · X26 PV window coatings (250 500 nm of CdTe) are attractive very low cost and· X26 PV window

Rollins, Andrew M.

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Development and characterization of PCDTBT:CdSe QDs hybrid solar cell  

SciTech Connect (OSTI)

Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

Dixit, Shiv Kumar, E-mail: shivkumardixit.7@gmail.com; Bhatnagar, Chhavi, E-mail: shivkumardixit.7@gmail.com; Kumari, Anita, E-mail: shivkumardixit.7@gmail.com; Madhwal, Devinder, E-mail: shivkumardixit.7@gmail.com; Bhatnagar, P. K., E-mail: shivkumardixit.7@gmail.com; Mathur, P. C., E-mail: shivkumardixit.7@gmail.com [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi, 110021 (India)

2014-10-15T23:59:59.000Z

262

Kinetics of Cd Release from Some Contaminated Calcareous Soils  

SciTech Connect (OSTI)

Contamination of soils with heavy metals may pose long-term risk to groundwater quality leading to health implications. Bioavailability of heavy metals, like cadmium (Cd) is strongly affected by sorption and desorption processes. The release of heavy metals from contaminated soils is a major contamination risks to natural waters. The release of Cd from contaminated soils is strongly influenced by its mobility and bioavailability. In this study, the kinetics of Cd desorption from ten samples of contaminated calcareous soils, with widely varying physicochemical properties, were studied using 0.01 M EDTA extraction. The median percentage of Cd released was about 27.7% of the total extractable Cd in the soils. The release of Cd was characterized by an initial fast release rate (of labile fractions) followed by a slower release rate (of less labile fractions) and a model of two first-order reactions adequately describes the observed release of Cd from the studied soil samples. There was positive correlation between the amount of Cd released at first phase of release and Cd in exchangeable fraction, indicating that this fraction of Cd is the main fraction controlling the Cd in the kinetic experiments. There was strongly negative correlation between the amount of Cd released at first and second phases of release and residual fraction, suggesting that this fraction did not contribute in Cd release in the kinetic experiments. The results can be used to provide information for evaluation of Cd potential toxicity and ecological risk from contaminated calcareous soils.

Sajadi Tabar, S.; Jalali, M., E-mail: jalali@basu.ac.ir [Bu-Ali Sina University, Department of Soil Science, College of Agriculture (Iran, Islamic Republic of)

2013-03-15T23:59:59.000Z

263

Trap Activation Energy and Transport Parameters of HgI$_2$ Crystals for Bubble-Plasma Diagnostics  

E-Print Network [OSTI]

In recent data on neutron induced acoustic cavitation in deuterium--containing liquids obtained by neutron measurements it was shown that very high temperatures could arise in some special cases. To study temperature of so--called bubble plasma it is desirable to have micro--detectors of X-rays, which can be prepared on the basis of room--temperature semiconductor detectors, in particular on mercuric iodide ($\\alpha$--HgI$_2$) crystals. Having in view this aim, the properties of gel--grown ($\\alpha$--HgI$_2$) crystals was studied by means of isothermal currents, and trap parameters was estimated. Results are promising for special aim of preparing X-ray detectors with moderate energy resolution needed in bubble--plasma diagnostic, though improving of crystal growing technology is necessary. {\\it PACS:} 29.40.Wk; 52.70.La {\\it Keywords:} X-ray and gamma--ray measurements; semiconductor detectors; mercuric iodide; plasma diagnostics; cavitation

M. B. Miller; V. F. Kushniruk; A. V. Sermyagin

2003-01-13T23:59:59.000Z

264

Spin noise spectroscopy of ZnO  

SciTech Connect (OSTI)

We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

Horn, H.; Berski, F.; Hbner, J.; Oestreich, M. [Institute for Solid State Physics, Leibniz Universitt Hannover, Appelstr. 2, 30167 Hannover (Germany); Balocchi, A.; Marie, X. [INSA-CNRS-UPS, LPCNO, Universit de Toulouse, 135 Av. de Rangueil, 31077 Toulouse (France); Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technische Universitt Braunschweig, Hans-Sommer-Strae 66, 38106 Braunschweig (Germany)

2013-12-04T23:59:59.000Z

265

Microstructural evolutions in converting epitaxial Tl2Ba2CaCu2Ox thin films to epitaxial HgBa2CaCu2O6+delta thin films  

E-Print Network [OSTI]

Superconducting HgBa2CaCu2O6+delta (Hg-1212) thin films were obtained from Tl2Ba2CaCu2Ox (Tl-2212) precursor films using a cation-exchange process. In this process, Tl cations on the precursor lattice were thermally excited and then replaced with Hg...

Wu, Judy; Siegal, M. P.; Xie, Y. Y.; Aytug, T.; Fang, L.

2003-02-01T23:59:59.000Z

266

Structural and optical properties of coreshell Ag{sub 2}S/HgS nanostructures  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: Coreshell Ag{sub 2}S/HgS nanostructures are successfully synthesized. The particle size and the structure were confirmed through TEM images. The absorbance analysis reveals red shift with increasing shell concentration. A transition from TYPE 1 to TYPE 2 coreshell nanostructure is observed. - Abstract: Here we report on a two-step synthesis route for fabrication of coreshell Ag{sub 2}S/HgS nanostructures. Nanoscale Ag{sub 2}S semiconductors are prepared by a standard redox reaction using AgNO{sub 3} and CS{sub 2} as the reactants in PVP. HgS layers are developed on Ag{sub 2}S cores through S-S bonding at the interface separating the two systems. The properties of these coreshell nanostructures are studied via various spectroscopic and microscopic tools like UVVis absorption spectra, photoluminescence spectra, X-ray diffraction pattern and transmission electron microscopic images. Change in optical properties is observed while varying the shell thickness in the sample. A detailed study on the luminescence properties reveal transition from TYPE 1 to TYPE 2 coreshell nanostructures is observed with increasing shell thickness.

Basyach, Priyanka; Choudhury, Amarjyoti, E-mail: ajc@tezu.ernet.in

2013-07-15T23:59:59.000Z

267

Quantification and Modeling of Tripartite CD2-, CD58FC Chimera (Alefacept)-, and CD16-mediated Cell Adhesion*  

E-Print Network [OSTI]

with human IgG1 Fc. Alefacept mediates adhesion by bridging CD2 on T cells to activating Fc receptors- dimensional and three-dimensional parameters can be deter- mined by data fitting. Alefacept competitively) portion is thought to link to immune effector mechanisms to destroy cancer cells and or over

Vale, Ronald D.

268

Compared Raman study of the phase transitions in K2ZnCl4 and Rb2ZnCl4, Rb2ZnBr4, K2SeO4  

E-Print Network [OSTI]

787 Compared Raman study of the phase transitions in K2ZnCl4 and Rb2ZnCl4, Rb2ZnBr4, K2SeO4 M to the incommensurate phase is discussed for the four compounds K2SeO4, K2ZnCl4, Rb2ZnCl4 and Rb2ZnBr4 on the basis measurements on K2ZnC'4 known to exhibit successive phase transitions similar to those of K2SeO4

Paris-Sud XI, Universit de

269

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO  

DOE Patents [OSTI]

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)

1992-01-07T23:59:59.000Z

270

observation at CDF Dmitry Litvintsev (Fermilab CD)  

E-Print Network [OSTI]

b observation at CDF Dmitry Litvintsev (Fermilab CD) for CDF June 15, 2007 Special seminar #12 and plans q Conclusion June 15, 2007 Dmitry Litvintsev, Fermilab, CDF 2 #12;Introduction Happy to show, Fermilab, CDF 3 #12;Source of data: CDF II 3 ¡ ¡ ¢ £ ¤ total 2 ¢ ¡ ¢ £ ¤ on tape Analysis uses data

Quigg, Chris

271

The UNEP project CD4CDM Sustainable  

E-Print Network [OSTI]

The UNEP project CD4CDM CDM Sustainable Development Impacts #12;1 CDM Sustainable Development of Foreign Affairs Anne Olhoff Anil Markandya Kirsten Halsnaes Tim Taylor #12;2 CDM Sustainable Development Impacts UNEP Risø Centre on Energy, Climate and Sustainable Development Risø National Laboratory Roskilde

272

Strong circular photogalvanic effect in ZnO epitaxial films  

SciTech Connect (OSTI)

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Chen, Y. H.; Chang, K. [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2011-12-23T23:59:59.000Z

273

Built-in electric field in ZnO based semipolar quantum wells grown on (1012) ZnO substrates  

SciTech Connect (OSTI)

We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (1012) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the 1210 direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.

Chauveau, J.-M.; Xia, Y.; Roland, B.; Vinter, B. [Centre de Recherche sur l'Htro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France) [Centre de Recherche sur l'Htro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France); University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Ben Taazaet-Belgacem, I.; Teisseire, M.; Nemoz, M.; Brault, J.; Damilano, B.; Leroux, M. [Centre de Recherche sur l'Htro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)] [Centre de Recherche sur l'Htro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)

2013-12-23T23:59:59.000Z

274

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR?GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

275

ag cd cu: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Kretchmar, R. Matthew 122 p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Physics Websites Summary: May 2010 Keywords: CdTe p-Doping Hole...

276

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering  

SciTech Connect (OSTI)

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)] [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03T23:59:59.000Z

277

Studies of sputtered CdTe and CdSe solar cells.  

E-Print Network [OSTI]

??CdTe has recently become the most commercially successful polycrystalline thin filmsolar module material. Its low cost, large-area solar module is reshaping the silicondominatedsolar panel market; (more)

Kwon, Dohyoung

2012-01-01T23:59:59.000Z

278

Photoluminescence studies of type-II CdSe/CdTe superlattices  

SciTech Connect (OSTI)

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Yin Leijun [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Skromme, B. J. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2012-08-06T23:59:59.000Z

279

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

280

PARS II Process Document Project Phasing (Multiple CD-2 from Single CD-1)  

Broader source: Energy.gov [DOE]

This document details the process by which projects that adopted Phasing approach (different phases of the same larger project are treated as separate sub-projects, resulting in multiple CD-2...

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 444453, 2007. Springer-Verlag Berlin Heidelberg 2007  

E-Print Network [OSTI]

H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 444­453, 2007. © Springer-Verlag Berlin estimated the individuality of fingerprints [1]. Hong, et al. reviewed performance evaluation for #12

Cho, Sung-Bae

282

NANOSENSOR DETECTS MERCURY IN WATER J.-S. Lee, M. S. Han, C. A. Mirkin, "Colorimetric Detection of Mercuric Ion (Hg2+  

E-Print Network [OSTI]

NANOSENSOR DETECTS MERCURY IN WATER J.-S. Lee, M. S. Han, C. A. Mirkin, "Colorimetric Detection ­ 0647560 Mercuric ion (Hg2+ ) is one of the most stable inorganic forms of mercury. It is also a caustic

Shull, Kenneth R.

283

Good and bad features of Ni-Cd cell designs  

SciTech Connect (OSTI)

Processes for spacecraft Ni-Cd cells are reviewed. Mechanical impregnation is compared against chemical and thermochemical impregnation.

Gross, S.

1996-02-01T23:59:59.000Z

284

Formation of Zn-rich phyllosilicate, Zn-layered double hydroxide and hydrozincite in contaminated calcareous soils  

E-Print Network [OSTI]

soil thin section and corresponding -XRF maps (black: lowestsection and corresponding - XRF maps for Zn, Ca, Fe and Mn (soil thin section and corresponding -XRF maps (black: lowest

Jacquat, Olivier

2009-01-01T23:59:59.000Z

285

PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE  

E-Print Network [OSTI]

365 PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE R. ALLEMAND, P. BOUTEILLER, M. LAVAL quality criteria, it is necessary to compare Cd-Te detectors results (or estimated characteristics) with other methods (i. e. 8cintillation cameras) in order to know the effective interest of Cd-Te in nuclear

Boyer, Edmond

286

3-DIMENSIONAL COMPACT DISC (CD) MICROFLUIDIC PLATFORM Presented to the  

E-Print Network [OSTI]

3-DIMENSIONAL COMPACT DISC (CD) MICROFLUIDIC PLATFORM _______________ A Thesis Presented OF THE THESIS 3-Dimensional Compact Disc (CD) Microfluidic Platform by Nitin Edmund Harwood Master of Science in a compact disc (CD) microfluidics platform involving two or more layers. The traditional 2-Dimensional

Kassegne, Samuel Kinde

287

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-03-19T23:59:59.000Z

288

E-Print Network 3.0 - anti-cd34 antibody functionalized Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cell Summary: , CA, USA), phycoerythrin (PE) conjugated anti-CD34 (BD- Phamingen, Palo Alto, CA, USA), anti-CD105... for the monoclonal antibodies against MSCs, CD166 and CD105,...

289

Mechanical and Electrical Properties of CdTe Tetrapods Studied by Atomic Force Microscopy  

E-Print Network [OSTI]

Electrical Properties of CdTe Tetrapods Studied by Atomicelectrical properties of CdTe tetrapod-shaped nanocrystalsIntroduction CdSe and CdTe nanocrystals possess interesting

2008-01-01T23:59:59.000Z

290

The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell  

SciTech Connect (OSTI)

We apply an array of correlated spatially-resolved techniques, including ?-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe{sub 2}, CdTe, Cu{sub 2}ZnSn(S,Se){sub 4}) under a substantially higher illumination density for concentrated photovoltaic and photo-detection.

Chen, Qiong; Zhang, Yong, E-mail: yong.zhang@uncc.edu [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)] [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

2013-12-09T23:59:59.000Z

291

E-Print Network 3.0 - applied zn fe Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on bulk samples indicated that ZnS and Zn-Fe (oxyhydr) oxides amounted... in the sediment, and from their further oxidative dissolution and ... Source: Lawrence Berkeley...

292

Optical/electrical correlations in ZnO: the plasmonic resonance...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Opticalelectrical correlations in ZnO: the plasmonic resonance phase diagram. Opticalelectrical correlations in ZnO: the plasmonic resonance phase diagram. Abstract: Following...

293

Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic Hybrid Thermoelectrics Organic Molecule Functionalized Zn3P2 Nanowire Inorganic-Organic Hybrid Thermoelectrics...

294

E-Print Network 3.0 - av zn cu Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and speciation in Arabidopsis halleri Arabidopsis lyrata progenies presenting Summary: ), copper (Cu) and Zn. Figure 7 compares the distribution of Zn, Mn and Ca in mature leaves...

295

Anisotropy in CdSe quantum rods  

SciTech Connect (OSTI)

The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough concentration. The preparation of the stable liquid crystalline solution of CdSe nanorods is described, as well as the large-scale alignment of the nanorods by taking advantage of the long-range orientational correlation in the liquid crystals. In addition, we investigated the phase diagram of the nanorod solution, as a step toward understanding the possible role of the long-range attractive interaction between the nanorods in the formation of lyotropic liquid crystals.

Li, Liang-shi

2003-09-01T23:59:59.000Z

296

Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots  

SciTech Connect (OSTI)

We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

Gardelis, Spiros, E-mail: S.Gardelis@imel.demokritos.gr; Nassiopoulou, Androula G. [NCSR Demokritos INN, Terma Patriarchou Grigoriou, Aghia Paraskevi, 15310 Athens (Greece)

2014-05-05T23:59:59.000Z

297

Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates  

SciTech Connect (OSTI)

We report on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells (QW) homoepitaxially grown by molecular beam epitaxy on a-plane ZnO substrates. We demonstrate a drastic improvement of the structural properties. We compare the photoluminescence properties of nonpolar homoepitaxial QWs and nonpolar heteroepitaxial QWs grown on sapphire and show that the reduction in structural defects and the improvement of surface morphology are correlated with a strong enhancement of the photoluminescence properties: reduction in full width at half maximum, strong increase in the luminescence intensities and their thermal stability. The comparison convincingly demonstrates the interest of homoepitaxial nonpolar QWs for bright UV emission applications.

Chauveau, J.-M.; Vinter, B. [Centre de Recherche sur l'Hetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France); University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Teisseire, M.; Kim-Chauveau, H.; Deparis, C.; Morhain, C. [Centre de Recherche sur l'Hetero-Epitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique (CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)

2010-08-23T23:59:59.000Z

298

ROLE OF COPPER IN THE PERFORMANCE OF CdS/CdTe SOLAR CELLS * , D. Albin2  

E-Print Network [OSTI]

simulations to reproduce and explain some of the experimental results. Introduction The performance of CdTe Cucd in CdTe [1,2]. Cu can also migrate along grain boundaries toward the main junction. The standard with a relatively simpler one in which Cu metal of varying thickness is evaporated on Te-rich CdTe surfaces

Sites, James R.

299

A study of the back contacts on CdTe/CdS solar cells D.L. Batznera  

E-Print Network [OSTI]

Institute of Technology, Zu?rich, Technoparkstr. 1, 8005 Zu?rich, Switzerland b ANTEC GmbH, Industriestrasse 2-4, 65779 Kelkheim, Germany Abstract Conventional back contacts on CdTe/CdS solar cells layer thickness and stability issues have been studied. Different etchants not only clean the Cd

Romeo, Alessandro

300

Neutral nitrogen acceptors in ZnO: The {sup 67}Zn hyperfine interactions  

SciTech Connect (OSTI)

Electron paramagnetic resonance (EPR) is used to characterize the {sup 67}Zn hyperfine interactions associated with neutral nitrogen acceptors in zinc oxide. Data are obtained from an n-type bulk crystal grown by the seeded chemical vapor transport method. Singly ionized nitrogen acceptors (N{sup ?}) initially present in the crystal are converted to their paramagnetic neutral charge state (N{sup 0}) during exposure at low temperature to 442 or 633?nm laser light. The EPR signals from these N{sup 0} acceptors are best observed near 5?K. Nitrogen substitutes for oxygen ions and has four nearest-neighbor cations. The zinc ion along the [0001] direction is referred to as an axial neighbor and the three equivalent zinc ions in the basal plane are referred to as nonaxial neighbors. For axial neighbors, the {sup 67}Zn hyperfine parameters are A{sub ?}?=?37.0?MHz and A{sub ?}?=?8.4?MHz with the unique direction being [0001]. For nonaxial neighbors, the {sup 67}Zn parameters are A{sub 1}?=?14.5?MHz, A{sub 2}?=?18.3?MHz, and A{sub 3}?=?20.5?MHz with A{sub 3} along a [101{sup }0] direction (i.e., in the basal plane toward the nitrogen) and A{sub 2} along the [0001] direction. These {sup 67}Zn results and the related {sup 14}N hyperfine parameters provide information about the distribution of unpaired spin density at substitutional neutral nitrogen acceptors in ZnO.

Golden, E. M.; Giles, N. C., E-mail: Nancy.Giles@afit.edu [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, Ohio 45433 (United States); Evans, S. M.; Halliburton, L. E. [Department of Physics, West Virginia University, Morgantown, West Virginia 26506 (United States)

2014-03-14T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Fluorescent Sensors for Zn2+ Based on a Fluorescein Platform  

E-Print Network [OSTI]

Fluorescent Sensors for Zn2+ Based on a Fluorescein Platform: Synthesis, Properties fluorescent sensors for Zn2+ that utilize fluorescein as a reporting group, Zinpyr-1 and Zinpyr-2, have been. Both Zinpyr sensors have excitation and emission wavelengths in the visible range (500 nm

Tsien, Roger Y.

302

Aerogel tempelated ZnO dye-sensitized solar cells.  

SciTech Connect (OSTI)

Atomic layer deposition is employed to conformally coat low density, high surface area aerogel films with ZnO. The ZnO/aerogel membranes are incorporated as photoanodes in dye-sensitized solar cells, which exhibit excellent power efficiencies of up to 2.4% under 100 mW cm{sup -2} light intensity.

Hamann, T. W.; Martinson , A. B. E.; Elam, J. W.; Pellin, M. J.; Hupp, J. T.; Materials Science Division; Northwestern Univ.

2008-01-01T23:59:59.000Z

303

files between "helped" and "unhelped" memory CD8 T cells to better understand  

E-Print Network [OSTI]

265 files between "helped" and "unhelped" memory CD8 T cells to better understand how memory CD8 the presence of CD4 help during "unhelped" memory CD8 T cell recall responses could not rem- edy their proliferative defects; and vice versa, the lack of CD4 help during "helped" memory CD8 T cell recall re- sponses

304

Vapor-liquid equilibria of coal-derived liquids; 3: Binary systems with tetralin at 200 mmHg  

SciTech Connect (OSTI)

Isobaric vapor-liquid equilibrium data are reported for binary systems of tetralin with p-xylene, [gamma]-picoline, piperidine, and pyridine; all systems were measured at 26.66 kPa (200 mmHg) with a recirculation still. Liquid-phase activity coefficients were correlated using the Van Laar, Wilson, NRTL, and UNIQUAC equations. Vapor-phase nonidealities were found negligible under the experimental conditions of this work, and deviations of the liquid phase from the ideal behavior, as described by Raoult's law, were found to be slightly positive for all the systems.

Blanco, B.; Beltran, S.; Cabezas, J.L. (University Coll., Burgos (Spain). Dept. of Chemical Engineering); Coca, J. (Univ. of Oviedo (Spain). Dept. of Chemical Engineering)

1994-01-01T23:59:59.000Z

305

Double beta decays of {sup 106}Cd  

SciTech Connect (OSTI)

The two-neutrino (2{nu}2{beta}) and neutrinoless (0{nu}2{beta}) double beta decays of {sup 106}Cd are studied for the transitions to the ground state 0{sub gs}{sup +} and 0{sup +} and 2{sup +} excited states in {sup 106}Pd by using realistic many-body wave functions calculated in the framework of the quasiparticle random-phase approximation. Effective, G-matrix-derived nuclear forces are used in realistic single-particle model spaces. All the possible channels, {beta}{sup +}{beta}{sup +}, {beta}{sup +}EC, and ECEC, are discussed for both the 2{nu}2{beta} and 0{nu}2{beta} decays. The associated half-lives are computed and particular attention is devoted to the study of the detectability of the resonant neutrinoless double electron capture (R0{nu}ECEC) process in {sup 106}Cd. The calculations of the present article constitute the thus far most complete and up-to-date investigation of the double-beta-decay properties of {sup 106}Cd.

Suhonen, Jouni [Department of Physics, P.O. Box 35 (YFL), FI-40014 University of Jyvaeskylae (Finland)

2011-12-16T23:59:59.000Z

306

SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} - two new Ae-Zn-Sn polar intermetallic compounds (Ae: alkaline earth metal)  

SciTech Connect (OSTI)

SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}, two closely related new polar intermetallic compounds, were obtained by high temperature reactions of the elements. Their crystal structures were determined with single crystal XRD methods, and their electronic structures were analyzed by means of DFT calculations. The Zn-Sn structure part of SrZn{sub 2}Sn{sub 2} comprises (anti-)PbO-like {l_brace}ZnSn{sub 4/4}{r_brace} and {l_brace}SnZn{sub 4/4}{r_brace} layers. Ca{sub 2}Zn{sub 3}Sn{sub 6} shows similar {l_brace}ZnSn{sub 4/4}{r_brace} layers and {l_brace}Sn{sub 4}Zn{r_brace} slabs constructed of a covalently bonded Sn scaffold capped by Zn atoms. For both phases, the two types of layers are alternatingly stacked and interconnected via Zn-Sn bonds. SrZn{sub 2}Sn{sub 2} adopts the SrPd{sub 2}Bi{sub 2} structure type, and Ca{sub 2}Zn{sub 3}Sn{sub 6} is isotypic to the R{sub 2}Zn{sub 3}Ge{sub 6} compounds (R=La, Ce, Pr, Nd). Band structure calculations indicate that both SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} are metallic. Analyses of the chemical bonding with the electron localization function (ELF) show lone pair like basins at Sn atoms and Zn-Sn bonding interactions between the layers for both title phases, and covalent Sn-Sn bonding within the {l_brace}Sn{sub 4}Zn{r_brace} layers of Ca{sub 2}Zn{sub 3}Sn{sub 6}. - Graphical abstract: Crystal structures of the new Ae-Zn-Sn polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Highlights: Black-Right-Pointing-Pointer New polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Black-Right-Pointing-Pointer Obtained by high temperature reactions of the elements. Black-Right-Pointing-Pointer Single crystal XRD structure determination and DFT electronic structure calculations. Black-Right-Pointing-Pointer Closely related crystal and electronic structures. Black-Right-Pointing-Pointer Metallic conductivity coexisting with lone pairs and covalent bonding features.

Stegmaier, Saskia [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany); Faessler, Thomas F., E-mail: Thomas.Faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany)

2012-08-15T23:59:59.000Z

307

Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis  

E-Print Network [OSTI]

, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV the degradation of stearic acid under UV-A light illumination (365 nm). We provide evidence that both ZnO and Zn photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large

308

The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface  

SciTech Connect (OSTI)

The interfacial electronic structures of zinc oxide (ZnO)/copper-phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface dipole is generated at the interface of the air exposed ZnO/CuPc while the interface of the annealed ZnO/CuPc generated -0.2 eV. In both cases, no band bending was observed. On the other hand, band bending at 0.3 eV and an interface dipole of 0.2 eV were observed at the interface of the sputter cleaned ZnO/CuPc. The energy offset between the conduction band maximum of ZnO and the highest occupied molecular orbital of CuPc was determined to be 0.6-0.7 eV for the contaminated ZnO interface while the offset was 1.0 eV for the cleaned ZnO interface. Contaminating moisture has little effect on the offset while the charge transfer was blocked and the offset was decreased in the presence of hydrocarbons.

Park, Sang Han; Kim, Hyo Jin; Cho, Mann-Ho [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Yi, Yeonjin [Division of Industrial Metrology, KRISS, Daejeon 305-340 (Korea, Republic of); Cho, Sang Wan [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Yang, Jaehyun; Kim, Hyoungsub [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2011-02-21T23:59:59.000Z

309

ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping  

DOE Patents [OSTI]

A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20T23:59:59.000Z

310

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites  

SciTech Connect (OSTI)

Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

2010-11-15T23:59:59.000Z

311

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell  

SciTech Connect (OSTI)

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity {rho} and carrier lifetime {tau} in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10{sup 15}-10{sup 16} cm{sup -3} and 10{sup -10}-10{sup -9} s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing {rho} and increasing {tau} in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V. [Yuriy Fedkovych Chernivtsi National University (Ukraine)

2010-10-15T23:59:59.000Z

312

SIXTH QUARTERLY REPORT OF RESEARCH ON CuxS - (Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS  

E-Print Network [OSTI]

for use in experimental photovoltaic cells. Hall mobilityvacuum method for photovoltaic cell fabrication" However,

Chin, B.L.

2011-01-01T23:59:59.000Z

313

Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation  

DOE Patents [OSTI]

An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

Washington, II, Aaron L; Duff, Martine C; Teague, Lucile C; Burger, Arnold; Groza, Michael

2014-11-11T23:59:59.000Z

314

Complexity and Productivity Differentiation Models of Metallogenic Indicator Elements in Rocks and Supergene Media Around Daijiazhuang Pb-Zn Deposit in Dangchang County, Gansu Province  

SciTech Connect (OSTI)

With the help of complexity indices, we quantitatively studied multifractals, frequency distributions, and linear and nonlinear characteristics of geochemical data for exploration of the Daijiazhuang Pb-Zn deposit. Furthermore, we derived productivity differentiation models of elements from thermodynamics and self-organized criticality of metallogenic systems. With respect to frequency distributions and multifractals, only Zn in rocks and most elements except Sb in secondary media, which had been derived mainly from weathering and alluviation, exhibit nonlinear distributions. The relations of productivity to concentrations of metallogenic elements and paragenic elements in rocks and those of elements strongly leached in secondary media can be seen as linear addition of exponential functions with a characteristic weak chaos. The relations of associated elements such as Mo, Sb, and Hg in rocks and other elements in secondary media can be expressed as an exponential function, and the relations of one-phase self-organized geological or metallogenic processes can be represented by a power function, each representing secondary chaos or strong chaos. For secondary media, exploration data of most elements should be processed using nonlinear mathematical methods or should be transformed to linear distributions before processing using linear mathematical methods.

He, Jin-zhong, E-mail: viewsino@163.com; Yao, Shu-zhen [China University of Geosciences, State Key Laboratory of Geological Processes and Mineral Resources (China)] [China University of Geosciences, State Key Laboratory of Geological Processes and Mineral Resources (China); Zhang, Zhong-ping; You, Guan-jin [Geological Surveying Institute of Gansu Province (China)] [Geological Surveying Institute of Gansu Province (China)

2013-03-15T23:59:59.000Z

315

Radioactive contamination of ZnWO4 crystal scintillators  

E-Print Network [OSTI]

The radioactive contamination of ZnWO4 crystal scintillators has been measured deep underground at the Gran Sasso National Laboratory (LNGS) of the INFN in Italy with a total exposure 3197 kg x h. Monte Carlo simulation, time-amplitude and pulse-shape analyses of the data have been applied to estimate the radioactive contamination of the ZnWO4 samples. One of the ZnWO4 crystals has also been tested by ultra-low background gamma spectrometry. The radioactive contaminations of the ZnWO4 samples do not exceed 0.002 -- 0.8 mBq/kg (depending on the radionuclide), the total alpha activity is in the range: 0.2 - 2 mBq/kg. Particular radioactivity, beta active 65Zn and alpha active 180W, has been detected. The effect of the re-crystallization on the radiopurity of the ZnWO4 crystal has been studied. The radioactive contamination of samples of the ceramic details of the set-ups used in the crystals growth has been checked by low background gamma spectrometry. A project scheme on further improvement of the radiopurity level of the ZnWO4 crystal scintillators is briefly addressed.

P. Belli; R. Bernabei; F. Cappella; R. Cerulli; F. A. Danevich; A. M. Dubovik; S. d'Angelo; E. N. Galashov; B. V. Grinyov; A. Incicchitti; V. V. Kobychev; M. Laubenstein; L. L. Nagornaya; F. Nozzoli; D. V. Poda; R. B. Podviyanuk; O. G. Polischuk; D. Prosperi; V. N. Shlegel; V. I. Tretyak; I. A. Tupitsyna; Ya. V. Vasiliev; Yu. Ya. Vostretsov

2010-09-05T23:59:59.000Z

316

String-Net Models with $Z_N$ Fusion Algebra  

E-Print Network [OSTI]

We study the Levin-Wen string-net model with a $Z_N$ type fusion algebra. Solutions of the local constraints of this model correspond to $Z_N$ gauge theory and double Chern-simons theories with quantum groups. For the first time, we explicitly construct a spin-$(N-1)/2$ model with $Z_N$ gauge symmetry on a triangular lattice as an exact dual model of the string-net model with a $Z_N$ type fusion algebra on a honeycomb lattice. This exact duality exists only when the spins are coupled to a $Z_N$ gauge field living on the links of the triangular lattice. The ungauged $Z_N$ lattice spin models are a class of quantum systems that bear symmetry-protected topological phases that may be classified by the third cohomology group $H^3(Z_N,U(1))$ of $Z_N$. Our results apply also to any case where the fusion algebra is identified with a finite group algebra or a quantusm group algebra.

Ling-Yan Hung; Yidun Wan

2012-12-19T23:59:59.000Z

317

Methotrexate intercalated ZnAl-layered double hydroxide  

SciTech Connect (OSTI)

The anticancerous drug methotrexate (MTX) has been intercalated into an ZnAl-layered double hydroxide (LDH) using an anion exchange technique to produce LDH-MTX hybrids having particle sizes in the range of 100-300 nm. X-ray diffraction studies revealed increases in the basal spacings of ZnAl-LDH-MTX hybrid on MTX intercalation. This was corroborated by the transmission electron micrographs, which showed an increase in average interlayer spacing from 8.9 A in pristine LDH to 21.3 A in LDH-MTX hybrid. Thermogravimetric analyses showed an increase in the decomposition temperature for the MTX molecule in the LDH-MTX hybrid indicating enhanced thermal stability of the drug molecule in the LDH nanovehicle. The cumulative release profile of MTX from ZnAl-LDH-MTX hybrids in phosphate buffer saline (PBS) at pH 7.4 was successfully sustained for 48 h following Rigter-Peppas model release kinetics via diffusion. - Graphical abstract: ZnAl-layered double hydroxide intercalated with methotrexate ({approx}34% loading) promises the possibility of use of ZnAl-LDH material as drug carrier and in controlled delivery. Highlights: > ZnAl-layered double hydroxide methotrexate nanohybrid has been synthesized. > XRD and TEM studies on nanohybrid revealed successful intercalation of methotrexate. > TG and CHN analyses showed {approx}34 wt% of methotrexate loading into the nanohybrid. > Possibility of use of ZnAl-LDH material as drug carrier and in delivery.

Chakraborty, Manjusha; Dasgupta, Sudip; Soundrapandian, Chidambaram [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Chakraborty, Jui, E-mail: jui@cgcri.res.in [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Ghosh, Swapankumar, E-mail: swapankumar.ghosh2@mail.dcu.ie [National Institute for Interdisciplinary Science and Technology (NIIST), CSIR, Trivandrum 695019 (India); Mitra, Manoj K. [Department of Metallurgical and Materials Engineering, Jadavpur University, Kolkata 700032 (India); Basu, Debabrata [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India)

2011-09-15T23:59:59.000Z

318

Hall, Seebeck, and Nernst Coefficients of Underdoped HgBa2CuO4+?: Fermi-Surface Reconstruction in an Archetypal Cuprate Superconductor  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Charge-density-wave order has been observed in cuprate superconductors whose crystal structure breaks the square symmetry of the CuO2 planes, such as orthorhombic YBa2Cu3Oy (YBCO), but not so far in cuprates that preserve that symmetry, such as tetragonal HgBa2CuO4+? (Hg1201). We have measured the Hall (RH), Seebeck (S), and Nernst (?) coefficients of underdoped Hg1201 in magnetic fields large enough to suppress superconductivity. The high-field RH(T) and S(T) are found to drop with decreasing temperature and become negative, as also observed in YBCO at comparable doping. In YBCO, the negative RH and S are signatures of a small electron pocket caused by Fermi-surface reconstruction, attributed to charge-density-wave modulations observed in the same range of doping and temperature. We deduce that a similar Fermi-surface reconstruction takes place in Hg1201, evidence that density-wave order exists in this material. A striking similarity is also found in the normal-state Nernst coefficient ?(T), further supporting this interpretation. Given the model nature of Hg1201, Fermi-surface reconstruction appears to be common to all hole-doped cuprates, suggesting that density-wave order is a fundamental property of these materials.

Doiron-Leyraud, Nicolas; Lepault, S.; Cyr-Choinire, O.; Vignolle, B.; Grissonnanche, G.; Lalibert, F.; Chang, J.; Barii?, N.; Chan, M. K.; Ji, L.; Zhao, X.; Li, Y.; Greven, M.; Proust, C.; Taillefer, Louis

2013-06-01T23:59:59.000Z

319

REGULAR ARTICLE Stability of polar ZnO surfaces studied by pair potential  

E-Print Network [OSTI]

density method Keju Sun · Hai-Yan Su · Wei-Xue Li Received: 1 September 2013 / Accepted: 16 November 2013. The overestimation of the stability of the ZnO(0001)­Zn terminal originates from more distribution of the transferred temperature sublimation processes indicated a higher sublimation rate of the ZnO(0001)­Zn surface compared

Li, Weixue

320

Effect of implanted species on thermal evolution of ion-induced defects in ZnO  

SciTech Connect (OSTI)

Implanted atoms can affect the evolution of ion-induced defects in radiation hard materials exhibiting a high dynamic annealing and these processes are poorly understood. Here, we study the thermal evolution of structural defects in wurtzite ZnO samples implanted at room temperature with a wide range of ion species (from {sup 11}B to {sup 209}Bi) to ion doses up to 2??10{sup 16}?cm{sup ?2}. The structural disorder was characterized by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy, while secondary ion mass spectrometry was used to monitor the behavior of both the implanted elements and residual impurities, such as Li. The results show that the damage formation and its thermal evolution strongly depend on the ion species. In particular, for F implanted samples, a strong out-diffusion of the implanted ions results in an efficient crystal recovery already at 600?C, while co-implantation with B (via BF{sub 2}) ions suppresses both the F out-diffusion and the lattice recovery at such low temperatures. The damage produced by heavy ions (such as Cd, Au, and Bi) exhibits a two-stage annealing behavior where efficient removal of point defects and small defect clusters occurs at temperatures ?500?C, while the second stage is characterized by a gradual and partial annealing of extended defects. These defects can persist even after treatment at 900?C. In contrast, the defects produced by light and medium mass ions (O, B, and Zn) exhibit a more gradual annealing with increasing temperature without distinct stages. In addition, effects of the implanted species may lead to a nontrivial defect evolution during the annealing, with N, Ag, and Er as prime examples. In general, the obtained results are interpreted in terms of formation of different dopant-defect complexes and their thermal stability.

Azarov, A. Yu.; Rauwel, P.; Kuznetsov, A. Yu.; Svensson, B. G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, N-0316 Oslo (Norway); Halln, A. [Royal Institute of Technology, KTH-ICT, Electrum 229, SE-164 40, Kista, Stockholm (Sweden); Du, X. L. [Institute of Physics, The Chinese Academy of Sciences, Beijing 100190 (China)

2014-02-21T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317  

SciTech Connect (OSTI)

Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

Gessert, T.

2012-04-01T23:59:59.000Z

322

REVIEW ARTICLE Heavy Metal Pollutants and Chemical Ecology: Exploring  

E-Print Network [OSTI]

REVIEW ARTICLE Heavy Metal Pollutants and Chemical Ecology: Exploring New Frontiers Robert S. Boyd to be learned about how heavy metal pollution impacts organisms, and that exciting new research frontiers as pollutants (Han et al. 2002), including Cd, Cu, Cr, Hg, Pb, Ni, and Zn. Much research on heavy metal

Boyd, Robert S.

323

FORUM New Phytol. (2000), 147, 236239 A new dawn the  

E-Print Network [OSTI]

in metalliferous soils. Surprisingly widespread tolerance Several negative impacts of heavy metal pollution consumption, result in toxic soil concentrations of `heavy metals' (Al, Cd, Co, Cr, Cu, Hg, Mn, Ni, Pb, Ti, Zn and others) (Gadd, 1993). There are also natural soils, such as serpentine, with levels of heavy metals

Taylor, Lee

324

Trace metals in sediments of coastal Siberia  

E-Print Network [OSTI]

For the work described in this thesis, a total of 218 samples from 104 cores from the East Siberian, Laptev, Kara, and Pechora Seas and the Ob and Yenisei Rivers were analyzed for the trace metals Ag, As, Ba, Cd, Cr, Cu, Fe, Hg, Ni, Pb, Sb, and Zn...

Esnough, Teresa Elizabeth

1996-01-01T23:59:59.000Z

325

Water Research 37 (2003) 43114330 A review of the biochemistry of heavy metal  

E-Print Network [OSTI]

of toxic heavy metals such as Cd2+ , Cu2+ , Zn2+ , Pb2+ , Cr3+ , and Hg2+ by inexpensive biomaterialsWater Research 37 (2003) 4311­4330 Review A review of the biochemistry of heavy metal biosorption and fucoidan, which are chiefly responsible for heavy metal chelation. In this comprehensive review

Long, Bernard

326

Heavy Metal Tolerance in Stenotrophomonas maltophilia Delphine Pages1,2,3  

E-Print Network [OSTI]

Heavy Metal Tolerance in Stenotrophomonas maltophilia Delphine Pages1,2,3 , Jerome Rose4 , Sandrine, this bacterium tolerates high levels (0.1 to 50 mM) of various toxic metals, such as Cd, Pb, Co, Zn, Hg, Ag mechanisms to overcome metal toxicity, reduction of oxyanions to non-toxic elemental ions and detoxification

Paris-Sud XI, Université de

327

Structural Basis for Metal Binding Specificity: the N-terminal Cadmium Binding Domain of the  

E-Print Network [OSTI]

In bacteria, P1-type ATPases are responsible for resistance to di- and monovalent toxic heavy metals by taking years and no common mechanism for resistance toward toxic heavy metals such as Cd(II), Zn(II), HgStructural Basis for Metal Binding Specificity: the N-terminal Cadmium Binding Domain of the P1

Scott, Robert A.

328

ZnO Nanocoral Structures for Photoelectrochemical Cells  

SciTech Connect (OSTI)

We report on synthesis of a uniform and large area of a new form of ZnO nanocorals. These nanostructures can provide suitable electrical pathways for efficient carrier collection as well as large surface areas for the photoelectrochemical (PEC) cells. PEC devices made from these ZnO nanocoral structures demonstrate significantly enhanced photoresponse as compared to ZnO compact and nanorod films. Our results suggest that the nanocoral structures could be an excellent choice for nanomaterial-based applications such as dye-sensitized solar cells, electrochromic windows, and batteries.

Ahn, K. S.; Yan, Y.; Shet, S.; Jones, K.; Deutsch, T.; Turner, J.; Al-Jassim, M.

2008-01-01T23:59:59.000Z

329

Spectroscopic Analysis of Impurity Precipitates in CdS Films  

SciTech Connect (OSTI)

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10{sup 2} micron-scale precipitates.

Webb, J. D.; Keane, J.; Ribelin, R.; Gedvilas, L.; Swartzlander, A.; Ramanathan, K.; Albin, D. S.; Noufi, R.

1999-10-31T23:59:59.000Z

330

CD DVD Retrieval | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed Route Segments (notCAMDL20-000'IUDeputyofRank: 14CD DVD

331

cd ordering | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 Industrial Carbon Capture and Storage Clean CoalCoal-Biomass12Fermi NationalCD-DVD

332

Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa  

E-Print Network [OSTI]

, with the participation of the Marcegaglia industrial group, IFIS Bank of Venice, the contribution of Ministry 905223. E-mail address: Nicola.Romeo@unipr.it (Nicola Romeo). 1 INTRODUCTION CdTe with its energy gap" which means that only a few microns of the material are needed to absorb 90% of photons with energy

Romeo, Alessandro

333

The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells  

SciTech Connect (OSTI)

The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2?wt.?% graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450?C showing conversion of ?10.60% under a tungsten lamp (12.1 mW/cm{sup 2}) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (?A) with input power, P (mW/cm{sup 2}) is found to be superlinear, showing a relation of I?=?P{sup n}, where n?=?1.4.

Islam, S. M. Z. [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Gayen, Taposh [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Tint, Naing; Alfano, Robert, E-mail: ralfano@sci.ccny.cuny.edu [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Shi, Lingyan [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Biomedical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Seredych, Mykola; Bandosz, Teresa J. [Department of Chemistry, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States)

2014-11-07T23:59:59.000Z

334

Hot exciton transport in ZnSe quantum wells  

E-Print Network [OSTI]

The in-plane transport of excitons in ZnSe quantum wells is investigated directly by microphotoluminescence in combination with a solid immersion lens. Due to the strong Froehlich coupling, the initial kinetic energy of the excitons is well...

Zhao, Hui; Moehl, Sebastian; Wachter, Sven; Kalt, Heinz

2002-02-01T23:59:59.000Z

335

Compton profile study of polycrystalline ZnBr{sub 2}  

SciTech Connect (OSTI)

The first ever Compton profile study of polycrystalline ZnBr{sub 2} is presented in this paper. The measurement of polycrystalline sample of ZnBr{sub 2} is performed using 59.54 keV gamma-rays emanating from an {sup 241}Am radioisotope. Theoretical calculations are performed following the Ionic model calculations for a number of configurations Zn{sup +x}Br{sub 2}{sup -x/2}(0.0{<=}x{<=}2.0 in step of 0.5) utilizing free atom profiles. The ionic model suggest transfer of 2.0 electrons from 4 s state of Zn to 4 p state of two Br atoms. The autocorrelation function B(z) is also derived from experiment and the most favoured ionic valence Compton profiles.

Dhaka, M. S. [Department of Physics, Engineering College Bikaner, Bikaner, 334004, Rajasthan (India); Sharma, G. [Department of Physics, Bansthali University, Bansthali, 304022, Rajasthan (India); Mishra, M. C.; Kothari, R. K.; Sharma, B. K. [Department of Physics, University of Rajasthan, Jaipur, 302004, Rajasthan (India)

2010-12-01T23:59:59.000Z

336

Recrystallization in CdTe/CdS A. Romeo, D.L. Batzner, H. Zogg, A.N. Tiwari*  

E-Print Network [OSTI]

¯uence on the microstructure of CdTe and photovoltaic properties. Solar cells with ef®ciency of 11.2 and 2.5% are obtainedTe/CdS photovoltaic devices have been obtained with different growth methods [1±3]. Recrys- tallization treatments. Therefore PVD grown CdS layers are used for better reliability despite of the opti- cal losses due to large

Romeo, Alessandro

337

Scientific uncertainties in atmospheric mercury models III: Boundary and initial conditions, model grid resolution, and Hg(II) reduction mechanism  

SciTech Connect (OSTI)

In this study, the model response in terms of simulated mercury concentration and deposition to boundary condition (BC), initial condition (IC), model grid resolution (12 km versus 36 km), and two alternative Hg(II) reduction mechanisms, was investigated. The model response to the change of gaseous elemental mercury (GEM) concentration from 0 to 2 ngm3 in IC/BC is found to be very linear (r240.99) based on the results of sensitivity simulations in July 2001. An increase of 1 ngm3 of GEM in BC resulted in an increase of 0.81 ngm3 in the monthly average of total mercury concentration, and 1270 ngm2 in the monthly total deposition. IC has similar but weaker effects compared to those of BC. An increase of 1 ngm3 of GEM in IC resulted in an increase of 0.14 ngm3 in the monthly average of total mercury concentration, and 250 ngm2 in the monthly total deposition. Varying reactive gaseous mercury (RGM) or particulate mercury (PHg) in BC/IC has much less significant impact. Simulation results at different grid resolutions show good agreement (slope 0.950 1.026, r 0.816 0.973) in mercury concentration, dry deposition, and total deposition. The agreement in wet deposition is somewhat weaker (slope 0.770 0.794, r 0.685 0.892) due to the difference in emission dilution and simulated precipitation that subsequently change reaction rates in the aqueous phase. Replacing the aqueous Hg(II)-HO2 reduction by either RGM reduction by CO (51018cm3 molecule1 s1) or photoreduction of RGM (1105 s1) gives significantly better model agreement with the wet deposition measured by Mercury Deposition Network (MDN). Possible ranges of the reduction rates are estimated based on model sensitivity results. The kinetic estimate requires further verification by laboratory studies.

Lin, Che-Jen [ORNL; Pongprueksa, Pruek [Lamar University; Lindberg, Steven Eric [ORNL; Jang, Carey [U.S. Environmental Protection Agency, Raleigh, North Carolina; Braverman, Thomas [U.S. Environmental Protection Agency, Raleigh, North Carolina; Bullock, Russell O [NOAA; Ho, Thomas [ORNL; Chu, Hsing-Wei [Lamar University

2008-03-01T23:59:59.000Z

338

Radioactive contamination of ZnWO4 crystal scintillators  

E-Print Network [OSTI]

The radioactive contamination of ZnWO4 crystal scintillators has been measured deep underground at the Gran Sasso National Laboratory (LNGS) of the INFN in Italy with a total exposure 3197 kg x h. Monte Carlo simulation, time-amplitude and pulse-shape analyses of the data have been applied to estimate the radioactive contamination of the ZnWO4 samples. One of the ZnWO4 crystals has also been tested by ultra-low background gamma spectrometry. The radioactive contaminations of the ZnWO4 samples do not exceed 0.002 ?? 0.8 mBq/kg (depending on the radionuclide), the total alpha activity is in the range: 0.2 - 2 mBq/kg. Particular radioactivity, beta active 65Zn and alpha active 180W, has been detected. The effect of the re-crystallization on the radiopurity of the ZnWO4 crystal has been studied. The radioactive contamination of samples of the ceramic details of the set-ups used in the crystals growth has been checked by low background gamma spectrometry. A project scheme on further improvement of the radiopur...

Belli, P; Cappella, F; Cerulli, R; Danevich, F A; Dubovik, A M; d'Angelo, S; Galashov, E N; Grinyov, B V; Incicchitti, A; Kobychev, V V; Laubenstein, M; Nagornaya, L L; Nozzoli, F; Poda, D V; Podviyanuk, R B; Polischuk, O G; Prosperi, D; Shlegel, V N; Tretyak, V I; Tupitsyna, I A; Vasiliev, Ya V; Vostretsov, Yu Ya

2010-01-01T23:59:59.000Z

339

Nanoscale order in ZnSe:(Mg, O)  

SciTech Connect (OSTI)

Self-assembling of 1O4Mg identical tetrahedral clusters resulting in the nanoscale order in ZnSe:(Mg, O) is presented. Co-doping transforms ZnSe into Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} alloy of MgO, MgSe, ZnO and ZnSe. The decrease of a sum of the enthalpies of the constituent compounds and diminution of the strain energy are the causes of this phenomenon. The self-assembling conditions are obtained from the free energy minimum when magnesium and oxygen are in the dilute and ultra dilute limits, correspondingly. The occurrence of 1O4Mg clusters and completion of self-assembling when all oxygen atoms are in clusters are results of the continuous phase transitions. The self-assembling occurrence temperature does not depend on the oxygen content and it is a function of magnesium concentration. Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} with all oxygen atoms in clusters can be obtained in temperature ranges from T = 206 C (x = 0.001, y = 110{sup ?4}) to T = 456 C (x = 0.01, y = 110{sup ?4}) and from T = 237 C (x = 0.001, y = 110{sup ?6}) to T = 462 C (x = 0.01, y = 110{sup ?6})

Elyukhin, Vyacheslav A. [Department of Electrical Engineering, Centro de Investigacin y de Estudios Avanzados del IPN, Avenida Instituto Politecnico Nacional 2508, 07360 Mxico (Mexico)

2014-02-21T23:59:59.000Z

340

Electron Transfer Between Colloidal ZnO Nanocrystals  

SciTech Connect (OSTI)

Colloidal ZnO nanocrystals capped with dodecylamine and dissolved in toluene can be charged photochemically to give stable solutions in which electrons are present in the conduction bands of the nanocrystals. These conduction-band electrons are readily monitored by EPR spectroscopy, with g* values that correlate with the nanocrystal sizes. Mixing a solution of charged small nanocrystals (e{sub CB}{sup -}:ZnO-S) with a solution of uncharged large nanocrystals (ZnO-L) caused changes in the EPR spectrum indicative of quantitative electron transfer from small to large nanocrystals. EPR spectra of the reverse reaction, e{sub CB}{sup -}:ZnO-L + ZnO-S, showed that electrons do not transfer from large to small nanocrystals. Stopped-flow kinetics studies monitoring the change in the UV bandedge absorption showed that reactions of 50 {micro}M nanocrystals were complete within the 5 ms mixing time of the instrument. Similar results were obtained for the reaction of charged nanocrystals with methyl viologen (MV{sup 2+}). These and related results indicate that the electron-transfer reactions of these colloidal nanocrystals are quantitative and very rapid, despite the presence of {approx}1.5 nm long dodecylamine capping ligands. These soluble ZnO nanocrystals are thus well-defined redox reagents suitable for studies of electron transfer involving semiconductor nanostructures.

Hayoun, Rebecca; Whitaker, Kelly M.; Gamelin, Daniel R.; Mayer, James M.

2011-03-30T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure Yong Ding, Rusen Yang, Zhong Lin Wang *  

E-Print Network [OSTI]

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure Yong Ding, Rusen Yang, Zhong Lin Wang induced by Zn-vacancy has been discovered to grow on wurtzite ZnO nanobelts. The superstructure grows parameters of ZnO. The superstructured phase is resulted from high-density Zn vacancies orderly distributed

Wang, Zhong L.

342

Non-oxidative reactions of propane on Zn/Na-ZSM5 Joseph A. Biscardi and Enrique Iglesia*  

E-Print Network [OSTI]

Non-oxidative reactions of propane on Zn/Na-ZSM5 Joseph A. Biscardi and Enrique Iglesia* Department rates during propane conversion at 773 K on Zn/Na-ZSM5 are about ten times higher than on Zn/H-ZSM5 catalysts with similar Zn content. The total rate of propane conversion is also higher on Zn/Na-ZSM5

Iglesia, Enrique

343

Syntheses, crystal structures and characterizations of BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}  

SciTech Connect (OSTI)

Two new barium zinc selenite and tellurite, namely, BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}, have been synthesized by the solid state reaction. The structure of BaZn(SeO{sub 3}){sub 2} features double chains of [Zn(SeO{sub 3}){sub 2}]{sup 2-} anions composed of four- and eight-member rings which are alternatively along a-axis. The double chains of [Zn{sub 2}(TeO{sub 3}){sub 2}Cl{sub 3}]{sup 3-} anions in BaZn(TeO{sub 3})Cl{sub 2} are formed by Zn{sub 3}Te{sub 3} rings in which each tellurite group connects with three ZnO{sub 3}Cl tetrahedra. BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2} are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements. -- Graphical abstract: Two new barium zinc selenite and tellurite, namely, BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}, have been synthesized by solid state reaction. The structure of BaZn(SeO{sub 3}){sub 2} features 1D double chains of [Zn(SeO{sub 3}){sub 2}]{sup 2-} anions composed of four- and eight-member rings which are alternatively along a-axis. The 1D double chains of [Zn{sub 2}(TeO{sub 3}){sub 2}Cl{sub 3}]{sup 3-} anions in BaZn(TeO{sub 3})Cl{sub 2} are formed by Zn{sub 3}Te{sub 3} rings in which each tellurite group connects with one ZnO{sub 3}Cl and two ZnO{sub 2}Cl{sub 2} tetrahedra. BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2} are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements.

Jiang Hailong [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China); Feng Meiling [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China); Mao Jianggao [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China)]. E-mail: mjg@ms.fjirsm.ac.cn

2006-06-15T23:59:59.000Z

344

Stable highly conductive ZnO via reduction of Zn vacancies. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBiSiteNeutron Scattering4 By I.| EMSL ZnMnO3 Phase from

345

Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells  

SciTech Connect (OSTI)

We report on the properties of nonpolar a-plane (Zn,Mg)O/ZnO quantum wells (QW) grown by molecular beam epitaxy on r plane sapphire and a plane ZnO substrates. For the QWs grown on sapphire, the anisotropy of the lattice parameters of the (Zn,Mg)O barrier gives rise to an unusual in-plane strain state in the ZnO QWs, which induces a strong blue-shift of the excitonic transitions, in addition to the confinement effects. We observe this blue-shift in photoluminescence excitation experiments. The photoluminescence excitation energies of the QWs are satisfactorily simulated when taking into account the variation of the exciton binding energy with the QW width and the residual anisotropic strain. Then we compare the photoluminescence properties of homoepitaxial QWs grown on ZnO bulk substrate and heteroepitaxial QWs grown on sapphire. We show that the reduction of structural defects and the improvement of surface morphology are correlated with a strong enhancement of the photoluminescence properties: reduction of full width at half maximum, strong increase of the luminescence intensities. The comparison convincingly demonstrates the interest of homoepitaxial nonpolar QWs for bright UV emission applications.

Chauveau, J.-M.; Vinter, B. [Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France); University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Teisseire, M.; Morhain, C.; Deparis, C. [Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France); Kim-Chauveau, H.

2011-05-15T23:59:59.000Z

346

Synthesis of reduced graphene oxide/ZnO nanorods composites on graphene coated PET flexible substrates  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: ZnO nanorods synthesized on CVD-graphene and rGO surfaces, respectively. ZnO/CVD-graphene and ZnO/rGO form a distinctive porous 3D structure. rGO/ZnO nanostructures possibility in energy storage devices. - Abstract: In this work, reduced graphene oxide (rGO)/ZnO nanorods composites were synthesized on graphene coated PET flexible substrates. Both chemical vapor deposition (CVD) graphene and reduced graphene oxide (rGO) films were prepared following by hydrothermal growth of vertical aligned ZnO nanorods. Reduced graphene sheets were then spun coated on the ZnO materials to form a three dimensional (3D) porous nanostructure. The morphologies of the ZnO/CVD graphene and ZnO/rGO were investigated by SEM, which shows that the ZnO nanorods grown on rGO are larger in diameters and have lower density compared with those grown on CVD graphene substrate. As a result of fact, the rough surface of nano-scale ZnO on rGO film allows rGO droplets to seep into the large voids of ZnO nanorods, then to form the rGO/ZnO hierarchical structure. By comparison of the different results, we conclude that rGO/ZnO 3D nanostructure is more desirable for the application of energy storage devices.

Huang, Lei, E-mail: leihuang@shnu.edu.cn; Guo, Guilue; Liu, Yang; Chang, Quanhong; Shi, Wangzhou

2013-10-15T23:59:59.000Z

347

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network [OSTI]

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

348

Native defects in MBE-grown CdTe  

SciTech Connect (OSTI)

Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Al. Lotnikw32/46, 02-668 Warsaw (Poland)

2013-12-04T23:59:59.000Z

349

X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites  

SciTech Connect (OSTI)

CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

2012-01-02T23:59:59.000Z

350

Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint  

SciTech Connect (OSTI)

We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

2012-06-01T23:59:59.000Z

351

SNS Target Test Facility: Prototype Hg Operations and Remote Handling Tests P. T. Spampinato, T. W. Burgess, J. B. Chesser, V. B. Graves, and S.L. Schrock  

E-Print Network [OSTI]

SNS Target Test Facility: Prototype Hg Operations and Remote Handling Tests P. T. Spampinato, T. W remote handling techniques and tools for replacing target system components. During the past year and analytical data. These included a welded-tube heat exchanger, an electromagnetic flow meter, a hydraulically

McDonald, Kirk

352

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

353

Shunt Passivation Process for CdTe Solar Cell - New Post Deposition Technique.  

E-Print Network [OSTI]

?? A cadmium sulfide / cadmium telluride (CdS/CdTe) solar cell consists of thedevice stack: Glass substrate / SnO2:F (TCO, transparent conductive oxide) / CdS (n-type (more)

Tessema, Misle Mesfin

2009-01-01T23:59:59.000Z

354

E-Print Network 3.0 - azospirillum brasilense cd Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cheCD double mutant, however, demonstrated... that the cheCD mutant cells were capable of producing methanol in response to asparagine (Kirby et al., 1997... ) and cheCD (strain...

355

The CD36, CLA-1(CD36L1), and LIMPII (CD36L2) gene family: Cellular distribution, chromosomal location, and genetic evolution  

SciTech Connect (OSTI)

CD36, CLA-1, and LIMPII are single polypeptide membrane glycoproteins, and the genes encoding them constitute a recently described gene family. In the present paper, a cDNA encoding the human lysosomal membrane protein LIMPII was used to determine its expression pattern in cells of various lineages. Like CLA-1, and in contrast with the restricted expression of CD36, the expression of LIMPII is widespread. Mapping of the human LIMPII and CLA-1 genes (gene symbols CD36L2 and CD36L1, respectively) to specific chromosomes revealed that CLA-1, LIMPII, and CD36 do not form a gene cluster, but are found dispersed on chromosomes 12, 4, and 7, respectively. These data, together with the phylogenetic analysis carried out for the members of this family, indicate that the LIMPII, CIA-1, and CD36 genes diverged early in evolution from an ancestor gene, possibly before the divergence between the arthropods and the vertebrates. 48 refs., 5 figs.

Calvo, D.; Vega, M.A. [Consejo Superior de Investigaciones Cientificas, Madrid (Spain)] [Consejo Superior de Investigaciones Cientificas, Madrid (Spain); Dopazo, J. [Universidad Autonoma de Madrid, Madrid (Spain)] [Universidad Autonoma de Madrid, Madrid (Spain)

1995-01-01T23:59:59.000Z

356

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer's thickness  

SciTech Connect (OSTI)

On the basis of the continuity equation, the spatial distribution of photogenerated excess electrons in the neutral region of the CdTe layer in a CdS/CdTe heterostructure is analyzed taking into account recombination at the rear surface of the layer. It is demonstrated that, owing to diffusion, excess electrons penetrate deep into the CdTe layer at distances far exceeding the effective penetration length for solar radiation. Calculations of the short-circuit current indicate that, for electron lifetimes of 10{sup -10}-10{sup -9} s, typical of thin-film CdS/CdTe solar cells, recombination losses are insignificant if the CdTe layer's thickness amounts to 3-4 {mu}m but increase dramatically if the thickness is below 1-1.5 {mu}m. In order to eliminate recombination losses in more efficient solar cells where the electron lifetime is {>=}10{sup -8} s the absorbing CdTe layer needs to be much thicker.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Savchuk, A. I.; Grushko, E. V. [Chernivtsi National University (Ukraine)

2009-08-15T23:59:59.000Z

357

The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell  

SciTech Connect (OSTI)

In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). We observe the interdiffusion at the CdTe/CdS interface and determine the composition of the active layers to be CdTe/CdS{sub 0.7}Te{sub 0.3}.

You, L. [CEA - LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9 (France); LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 (France); Chevalier, N.; Bernardi, S.; Martinez, E.; Mariolle, D.; Feuillet, G.; Chabli, A.; Bertin, F. [CEA - LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9 (France); Kogelschatz, M. [LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 (France); Bremond, G. [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7 Avenue Jean Capelle, Bat. Blaise Pascal, F69621 Villeurbanne Cedex (France)

2011-11-10T23:59:59.000Z

358

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

359

Photodynamic action of curcumin derived polymer modified ZnO nanocomposites  

SciTech Connect (OSTI)

Highlights: ? ZnO/PVA nano sensitized with curcumin and its metal complex were synthesized by vacuum evaporation method. ? M/cur sensitized on ZnO/PVA nanocomposites were characterized. ? Generation of {sup 1}O{sub 2} and ROS were detected by optical and EPR-spin trapping method. ? It was found that photoinduced cleavage of DNA using Zn/curZnO/PVA was superior. ? Photodegradation of MB in water catalyzed by ZnO/PVAZn/cur was also superior under visible light. -- Abstract: The photodynamic action of ZnO nano can be improved by modifying the surface by PVA and encapsulating the natural product, curcumin. The synthesized ZnO/PVA nanocomposites have been characterized using XRD, SEM, TEM, FTIR, TGDTA, etc. Here we are reporting the photodynamic effect of ZnO nanocomposites on pUC18 DNA. Based on optical and EPR measurements, singlet oxygen and other ROS were responsible for photocleavage of DNA. Most importantly, derived curcumin modified ZnO/PVA nanocomposites were comparatively more effective than derived curcumin complex against HeLa cell lines under in vitro condition. In addition, photodegradation of methylene blue (MB) in water catalyzed by nano ZnO/PVAcurcumin derivative was investigated at room temperature. Under visible irradiation photocatalytic activity of ZnO nanomaterial sensitized curcumin was higher than those of curcumin and nano ZnO.

Hariharan, R.; Senthilkumar, S. [P.G. Department of Chemistry, Cardamom Planters Association College, Bodinayakanur 625513, Tamil Nadu (India)] [P.G. Department of Chemistry, Cardamom Planters Association College, Bodinayakanur 625513, Tamil Nadu (India); Suganthi, A., E-mail: suganthiphd09@gmail.com [P.G. and Research Department of Chemistry, Thiagarajar College, Madurai 625009, Tamil Nadu (India); Rajarajan, M., E-mail: rajarajan_1962@yahoo.com [P.G. Department of Chemistry, Cardamom Planters Association College, Bodinayakanur 625513, Tamil Nadu (India)

2012-11-15T23:59:59.000Z

360

'Giant' multishell CdSe nanocrystal quantum dots with supporessed blinking: novel fluorescent probes for real-time detection of single-molecule events  

SciTech Connect (OSTI)

We reported for the first time that key nanocrystal quantum dot (NQD) optical properties-quantum yield, photobleaching and blinking-can be rendered independent ofNQD surface chemistry and environment by growth of a very thick, defect-free inorganic shell. Here, we show the precise shell-thickness dependence of these effects. We demonstrate that 'giant-shell' NQDs can be largely non-blinking for observation times as long as 54 minutes and lhat on-time fractions are independent of experimental time-resolution from 1-200 ms. These effects are primarily demonstrated on (CdSe)CdS (core)shell NQDs, but we also show that alloyed shells comprising Cd.Znl.'S and terminated with a non-cytotoxic ZnS layer exhibit similar properties. The mechanism for suppressed blinking and dramatically enhanced stability is attributed to both effective isolation of the NQD core excitonic wavefunction from the NQD surface, as well as a quasi-Type II electronic structure. The unusual electronic structure provides for effective spatial separation of the electron and hole into the shell and core, respectively, and, thereby, for reduced efficiencies in non-radiative Auger recombination.

Hollingsworth, Jennifer A [Los Alamos National Laboratory; Vela, Javier [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Klimov, Victor I [Los Alamos National Laboratory; Casson, Amy R [Los Alamos National Laboratory; Chen, Yongfen [NON LANL

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

362

Structural Studies of Al:ZnO Powders and Thin Films | Stanford...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used...

363

Pressure Behaviour of the UV and Green Emission Bands in ZnO...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Pressure Behaviour of the UV and Green Emission Bands in ZnO Micro-rods. Pressure Behaviour of the UV and Green Emission Bands in ZnO Micro-rods. Abstract: The pressure behavior of...

364

E-Print Network 3.0 - al pb zn Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

et al., 1993; Dejonghe, 1998), resulting in elevated concentrations of Zn, Pb... by atomic absorption spectroscopy (AAS) for Zn, Pb, Mn, Fe, Ca, Mg, K and Al, and by...

365

An improved understanding of fluorescent Zn(II) sensors and their uses in biological settings  

E-Print Network [OSTI]

Chapter 1. An Introduction to Fluorescent Zn(II) Sensors and Their Applications in Biological Systems This chapter opens with an overview of the numerous roles of zinc in biology, with an emphasis on labile Zn(II), that ...

Wong, Brian Alexander

2009-01-01T23:59:59.000Z

366

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network [OSTI]

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

367

Syngas Conversion to Gasoline-Range Hydrocarbons over Pd/ZnO...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Syngas Conversion to Gasoline-Range Hydrocarbons over PdZnOAl2O3 and ZSM-5 Composite Catalyst System. Syngas Conversion to Gasoline-Range Hydrocarbons over PdZnOAl2O3 and ZSM-5...

368

Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping  

SciTech Connect (OSTI)

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2007-12-03T23:59:59.000Z

369

PdZnAl Catalysts for the Reactions of Water-Gas-Shift, Methanol...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

PdZnAl Catalysts for the Reactions of Water-Gas-Shift, Methanol Steam Reforming, and Reverse-Water-Gas-Shift. PdZnAl Catalysts for the Reactions of Water-Gas-Shift, Methanol Steam...

370

CO/FTIR Spectroscopic Characterization of Pd/ZnO/Al2O3 Catalysts...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

COFTIR Spectroscopic Characterization of PdZnOAl2O3 Catalysts for Methanol Steam Reforming. COFTIR Spectroscopic Characterization of PdZnOAl2O3 Catalysts for Methanol Steam...

371

Fluorescent Dye Encapsulated ZnO Particles with Cell-specific...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dye Encapsulated ZnO Particles with Cell-specific Toxicity for Potential use in Biomedical Applications. Fluorescent Dye Encapsulated ZnO Particles with Cell-specific Toxicity...

372

Nitrogen is a deep acceptor in ZnO  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations [Lyons, Janotti, and Van de Walle, Appl. Phys. Lett. 95, 252105 (2009)] indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. The deep-acceptor behavior can be explained by the low energy of the ZnO valence band relative to the vacuum level.

McCluskey, M.D. [Washington State Univ., Pullman, WA (United States); Tarun, M.C. [Washington State Univ., Pullman, WA (United States); Iqbal, M. Zafar [COMSATS Institute of Information Technology, Islamabad (Pakistan)

2011-04-14T23:59:59.000Z

373

High mobility ZnO nanowires for terahertz detection applications  

SciTech Connect (OSTI)

An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (?0.3?THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

Liu, Huiqiang [State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong, Guangzhou 510275 (China); State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Sichuan, Mianyang 621010 (China); Peng, Rufang, E-mail: pengrufang@swust.edu.cn, E-mail: chusheng@mail.sysu.edu.cn; Chu, Shijin [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Sichuan, Mianyang 621010 (China); Chu, Sheng, E-mail: pengrufang@swust.edu.cn, E-mail: chusheng@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong, Guangzhou 510275 (China)

2014-07-28T23:59:59.000Z

374

Process for fabricating ZnO-based varistors  

DOE Patents [OSTI]

The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi.sub.2 O.sub.3. The mix is hot-pressed to form a compact at temperatures below 850.degree. C. and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.

Lauf, Robert J. (Oak Ridge, TN)

1985-01-01T23:59:59.000Z

375

Zinc Fertilization Plus Liming to Reduce Cadmium Uptake by Romaine Lettuce on Cd-Mineralized Lockwood Soil  

E-Print Network [OSTI]

by emissions from zinc smelters. Trace Subst. Environ.1999) who studied Zn-smelter or mine waste contaminated orgrowing Romaine lettuce on Zn-smelter contaminated soils in

Chaney, Rufus L; Green, Carrie E.; Ajwa, Husein A; Smith, Richard F

2009-01-01T23:59:59.000Z

376

Structural recovery of ion implanted ZnO nanowires G. Perillat-Merceroz,1, 2, a)  

E-Print Network [OSTI]

applications, ZnO nanowires are studied for making light- emitting diodes (LEDs) because of the advantages

Boyer, Edmond

377

Structure of graphene oxide dispersed with ZnO nanoparticles  

SciTech Connect (OSTI)

Graphene has been proposed as a promising two-dimensional nanomaterial with outstanding electronic, optical, thermal and mechanical properties for many applications. In present work a process of dispersion of graphene oxide with ZnO nanoparticles in ethanol solution with different pH values, have been studied. Samples have been characterized by XRD, SEM, PL, UV-visible spectroscopy and particles size measurement. The results analysis indicates overall improved emission spectrum. It has been observed that the average diameter of RGO (Reduced Graphene Oxide) decreases in presence of ZnO nanoparticles from 3.8?m to 0.41?m.

Yadav, Rishikesh, E-mail: rishikesh.yadav62@gmail.com; Pandey, Devendra K., E-mail: devendrakphy@gmail.com [School of Nanotechnology, Rajiv Gandhi Proudyogiki Vishwavidalaya, Bhopal, M.P. (India); Khare, P. S., E-mail: purnimaswarup@hotmail.com [Department of Physics, Rajiv Gandhi Proudyogiki Vishwavidalaya, Bhopal M.P. (India)

2014-10-15T23:59:59.000Z

378

Study of the intermediate layer at the n{sup +}-CdS/p-CdTe interface  

SciTech Connect (OSTI)

The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe{sub 1-x}S{sub x} layer depend strongly on the heterostructure formation conditions.

Muzafarova, S. A., E-mail: samusu@rambler.ru; Aitbaev, B. U.; Mirsagatov, Sh. A. [Academy of Sciences of Republic Uzbekistan, Physicotechnical Institute, NPO Fizika solntsa (Uzbekistan); Durshimbetov, K. [Karakalpak State University (Uzbekistan); Zhanabergenov, Zh. [Karakalpak State Pedagogical Institute (Uzbekistan)

2008-12-15T23:59:59.000Z

379

Corrosion of, and cellular responses to MgZnCa bulk metallic glasses Xuenan Gu a  

E-Print Network [OSTI]

Corrosion of, and cellular responses to Mg­Zn­Ca bulk metallic glasses Xuenan Gu a , Yufeng Zheng a: Magnesium alloy Bulk metallic glass Mechanical property Corrosion Cytotoxicity a b s t r a c t Mg­Zn­Ca bulk, mechanical testing, corrosion and cytotoxicity tests. It was found that the Mg66Zn30Ca4 sample presents

Zheng, Yufeng

380

Effect of the (OH) Surface Capping on ZnO Quantum Dots  

E-Print Network [OSTI]

in air at different temperatures from 150500 C for 30 min. In comparison, highly purified bulk Zn is related to oxygen deficiency [1]; the other is a much narrower ultraviolet (UV) emission band at around, compared with good quality ZnO single crystals or ZnO powders, the UV bandgap luminescence in quantum dots

Nabben, Reinhard

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Compensation of flare-induced CD changes EUVL  

DOE Patents [OSTI]

A method for compensating for flare-induced critical dimensions (CD) changes in photolithography. Changes in the flare level results in undesirable CD changes. The method when used in extreme ultraviolet (EUV) lithography essentially eliminates the unwanted CD changes. The method is based on the recognition that the intrinsic level of flare for an EUV camera (the flare level for an isolated sub-resolution opaque dot in a bright field mask) is essentially constant over the image field. The method involves calculating the flare and its variation over the area of a patterned mask that will be imaged and then using mask biasing to largely eliminate the CD variations that the flare and its variations would otherwise cause. This method would be difficult to apply to optical or DUV lithography since the intrinsic flare for those lithographies is not constant over the image field.

Bjorkholm, John E. (Pleasanton, CA); Stearns, Daniel G. (Los Altos, CA); Gullikson, Eric M. (Oakland, CA); Tichenor, Daniel A. (Castro Valley, CA); Hector, Scott D. (Oakland, CA)

2004-11-09T23:59:59.000Z

382

agonist cd40 antibody: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(15-17) and that the interaction between CD2 and LFA-3 can mediate adhesion of J Clark; Debbie A Law; David J Paterson; Michael Puklavec; Alan; F. Williams 1988-01-01 405...

383

antigens cd: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in adulthood of autoreactive T cells specific to that antigen. The renal-specific ... Marshall, Naomi Jane 2009-01-01 42 Cardiovasc Res . Author manuscript A CD31-derived...

384

al cd cu: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for improving performance Materials Science Websites Summary: at the CdSCuInSe 2 thin-film solar-cell heterojunction Appl. Phys. Lett. 79, 4482 (2001); 10, crystalline...

385

High-efficiency large-area CdTe panels  

SciTech Connect (OSTI)

The objective of this three year effort has been to develop an improved materials technology and fabrication process for limited volume production of 1 ft{sup 2} and 4 ft{sup 2} CdS/CdTe photovoltaic modules. The module stability objective by the end of this three year subcontract was to develop techniques to provide ten year life exploration with no greater than 10% degradation. In order to achieve these efficiency and stability objectives, the research program has been separated into tasks including: (1) analysis and characterization of CdS/CdTe Devices; (2) performance optimization on small cells; (3) encapsulation and stability testing; and (4) module efficiency optimization. 27 refs., 18 figs., 3 tabs.

Albright, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))

1990-11-01T23:59:59.000Z

386

Yrast structure of the two-proton- and three-neutron-hole nucleus {sup 203}Hg from the decay of a 53/2{sup +} isomer  

SciTech Connect (OSTI)

The decay of a new, 53/2{sup +}, isomer at 8281 keV in {sup 203}Hg has been studied by {gamma} coincidence spectroscopy. A half-life of 146(30) ns was measured. In addition, another isomeric, 39/2{sup +}, level with a half-life of 7.8(1.5) ns was observed. Some elements of the Rydstroem shell-model interaction have been adjusted to reproduce level energies in nuclei with two to four holes in the {sup 208}Pb core. With this interaction, the new states in the five-hole nucleus {sup 203}Hg are reproduced with an rms error of 105 keV.

Szpak, B.; Maier, K. H.; Fornal, B.; Broda, R.; Cieplicka, N.; Krolas, W.; Pawlat, T.; Wrzesinski, J. [Niewodniczanski Institute of Nuclear Physics PAN, Krakow (Poland); Smolkowska, A. S. [Niewodniczanski Institute of Nuclear Physics PAN, Krakow (Poland); Gdansk University of Technology, Gdansk (Poland); Carpenter, M. P.; Janssens, R. V. F.; Zhu, S. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2011-06-15T23:59:59.000Z

387

Subdiffraction, Luminescence-Depletion Imaging of Isolated, Giant, CdSe/CdS Nanocrystal Quantum Dots  

SciTech Connect (OSTI)

Subdiffraction spatial resolution luminescence depletion imaging was performed with giant CdSe/14CdS nanocrystal quantum dots (g-NQDs) dispersed on a glass slide. Luminescence depletion imaging used a Gaussian shaped excitation laser pulse overlapped with a depletion pulse, shaped into a doughnut profile, with zero intensity in the center. Luminescence from a subdiffraction volume is collected from the central portion of the excitation spot, where no depletion takes place. Up to 92% depletion of the luminescence signal was achieved. An average full width at half-maximum of 40 10 nm was measured in the lateral direction for isolated g-NQDs at an air interface using luminescence depletion imaging, whereas the average full width at half-maximum was 450 90 nm using diffraction-limited, confocal luminescence imaging. Time-gating of the luminescence depletion data was required to achieve the stated spatial resolution. No observable photobleaching of the g-NQDs was present in the measurements, which allowed imaging with a dwell time of 250 ms per pixel to obtain images with a high signal-to-noise ratio. The mechanism for luminescence depletion is likely stimulated emission, stimulated absorption, or a combination of the two. The g-NQDs fulfill a need for versatile, photostable tags for subdiffraction imaging schemes where high laser powers or long exposure times are used.

Lesoine, Michael D. [Ames Laboratory; Bhattacharjee, Ujjal [Ames Laboratory; Guo, Yijun [Ames Laboratory; Vela, Javier [Ames Laboratory; Petrich, Jacob W. [Ames Laboratory; Smith, Emily A. [Ames Laboratory

2013-01-18T23:59:59.000Z

388

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

389

E-Print Network 3.0 - anti-cd25 immunotherapy elicits Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

8.00 Summary: of T reg cells in tumor- bearing rodents using anti-CD25 antibodies (9) or low-dose cyclophosphamide (12... with anti-CD3-FITC, anti-CD4-PerCP, and anti-CD25-PE to...

390

SIGNS IN THE cd-INDEX OF EULERIAN PARTIALLY ORDERED SETS  

E-Print Network [OSTI]

in the cd-index. The cd-index of a polytope has all positive entries. An important open problem is to give the broadest natural class of Eulerian posets having nonnegative cd-index. This paper completely determines which entries of the cd...

Bayer, Margaret M.

2000-12-28T23:59:59.000Z

391

The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells  

SciTech Connect (OSTI)

High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270?C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2}?+?Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270?C decrease as the O{sub 2}/(O{sub 2}?+?Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270?C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270?C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270?C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa [Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

2014-07-28T23:59:59.000Z

392

Activation of tolerogenic dendritic cells in the tumor draining lymph CD8+ T cells engineered to express CD40 ligand  

E-Print Network [OSTI]

Tolerogenic dendritic cells in the tumor microenvironment can inhibit the generation and maintenance of robust antitumor T cell responses. In this study, we investigated the effects of local delivery of CD40L by tumor-reactive ...

Higham, Eileen M.

393

Recent progress in commensurate-incommensurate phase transformations. [Hg/sub 3/-delta AsF/sub 6/; 2H polytype of TaSe/sub 2/  

SciTech Connect (OSTI)

Three topics are discussed. (1) the nature of long wavelength excitations in Hg/sub 3/-delta AsF/sub 6/, where gapless excitations in addition to the conventional acoustic modes are observed. (2) Thiourea, in which new commensurate phases can be induced by an external electric field. (3) Discommensurations in 2HTaSe/sub 2/, where recent electron diffraction and high resolution x-ray data combine with neutron results to establish a quite complex and subtle behavior. 9 figures.

Axe, J.D.

1982-08-01T23:59:59.000Z

394

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

395

ZnO Nanotube Based Dye-Sensitized Solar Cells  

E-Print Network [OSTI]

ZnO Nanotube Based Dye-Sensitized Solar Cells Alex B. F. Martinson,, Jeffrey W. Elam, Joseph T templated by anodic aluminum oxide for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition of the best dye- sensitized solar cells (DSSCs) is the product of a dye with moderate extinction

396

Atomic Absorption Method Guide Zn in Copper Alloys  

E-Print Network [OSTI]

Atomic Absorption Method Guide Zn in Copper Alloys Principle The sample is digested in nitric/hydrochloric acid, and zinc is determined by flame atomic absorption spectrometry using an air-acetylene flame · Copper Alloys · Zinc · Flame · Atomic Absorption Method Guide: 40158 #12;©2008 Thermo Fisher Scientific

Wells, Mathew G. - Department of Physical and Environmental Sciences, University of Toronto

397

On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi  

SciTech Connect (OSTI)

CdTe crystals of two types have been grown by the vertical Bridgman method: (i) crystals doped with Bi to {approx}10{sup 18} cm{sup -3} and (ii) double-doped (Bi + Cl) crystals with a Bi concentration of {approx}10{sup 18} cm{sup -3} and a Cl concentration of {approx}10{sup 17} cm{sup -3}. The temperature dependences of the resistivity, photoconductivity, and low-temperature photoluminescence are investigated for the crystals grown. Analysis has shown that doping with Bi (crystals of the first type) leads to compensation of the material. The resistivity of the CdTe:Bi samples at room temperature, depending on the doping level, is varied in the range of 10{sup 5}-10{sup 9} {Omega} cm. The hole concentration is determined by the acceptor level at E{sub v} + 0.4 eV in lightly doped CdTe:Bi samples and by the deep center at E{sub v} + 0.72 eV in heavily doped CdTe:Bi samples. Double doping leads to inversion of the conductivity type and reduces the resistivity to {approx}1 {Omega} cm. Heavily doped CdTe:Bi crystals and double-doped crystals exhibit the presence of acceptors with an ionization energy of 36 meV, which is atypical of CdTe.

Kolosov, S. A., E-mail: kolosov@sci.lebedev.ru; Krivobok, V. S., E-mail: krivobok@sci.lebedev.ru; Klevkov, Yu. V.; Adiyatullin, A. F. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2013-04-15T23:59:59.000Z

398

Study of molybdenum oxide as a back contact buffer for thin film n-CdS/p-CdTe solar cells.  

E-Print Network [OSTI]

??Back contact improvement is one of the most crucial issues for the realization of highly efficient n-CdS/p-CdTe solar cells. Conventional methods for making a sufficiently (more)

Lin, Hao

2013-01-01T23:59:59.000Z

399

First principle study of elastic and thermodynamic properties of ZrZn{sub 2} and HfZn{sub 2} under high pressure  

SciTech Connect (OSTI)

A comprehensive investigation of the structural, elastic, and thermodynamic properties for Laves-phases ZrZn{sub 2} and HfZn{sub 2} are conducted using density functional total energy calculations combined with the quasi-harmonic Debye model. The optimized lattice parameters of ZrZn{sub 2} and HfZn{sub 2} compare well with available experimental values. We estimated the mechanical behaviors of both compounds under compression, including mechanical stability, Young's modulus, Poisson's ratio, ductility, and anisotropy. Additionally, the thermodynamic properties as a function of pressure and temperature are analyzed and found to be in good agreement with the corresponding experimental data.

Sun, Na; Zhang, Xinyu, E-mail: jiaqianqin@gmail.com; Ning, Jinliang; Zhang, Suhong; Liang, Shunxing; Ma, Mingzhen; Liu, Riping [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Qin, Jiaqian, E-mail: jiaqianqin@gmail.com [Metallurgy and Materials Science Research Institute, Chulalongkorn University, Bangkok 10330 (Thailand)

2014-02-28T23:59:59.000Z

400

Scintillating bolometers based on ZnMoO$_4$ and Zn$^{100}$MoO$_4$ crystals to search for 0$\  

E-Print Network [OSTI]

The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$\

Poda, D V; Arnaud, Q; Augier, C; Benot, A; Berg, L; Boiko, R S; Bergmann, T; Blmer, J; Broniatowski, A; Brudanin, V; Camus, P; Cazes, A; Censier, B; Chapellier, M; Charlieux, F; Chernyak, D M; Coron, N; Coulter, P; Cox, G A; Danevich, F A; de Boissire, T; Decourt, R; De Jesus, M; Devoyon, L; Drillien, A -A; Dumoulin, L; Eitel, K; Enss, C; Filosofov, D; Fleischmann, A; Fourches, N; Gascon, J; Gastaldo, L; Gerbier, G; Giuliani, A; Gros, M; Hehn, L; Henry, S; Herv, S; Heuermann, G; Humbert, V; Ivanov, I M; Juillard, A; Kflian, C; Kleifges, M; Kluck, H; Kobychev, V V; Koskas, F; Kozlov, V; Kraus, H; Kudryavtsev, V A; Sueur, H Le; Loidl, M; Magnier, P; Makarov, E P; Mancuso, M; de Marcillac, P; Marnieros, S; Marrache-Kikuchi, C; Menshikov, A; Nasonov, S G; Navick, X-F; Nones, C; Olivieri, E; Pari, P; Paul, B; Penichot, Y; Pessina, G; Piro, M C; Plantevin, O; Redon, T; Robinson, M; Rodrigues, M; Rozov, S; Sanglard, V; Schmidt, B; Shlegel, V N; Siebenborn, B; Strazzer, O; Tcherniakhovski, D; Tenconi, M; Torres, L; Tretyak, V I; Vagneron, L; Vasiliev, Ya V; Velazquez, M; Viraphong, O; Walker, R J; Weber, M; Yakushev, E; Zhang, X; Zhdankov, V N

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate  

SciTech Connect (OSTI)

This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in Ceramic Engineering and Science Proceedings (the 29th International Conference on Advanced Ceramics and Composites - Advances in Bioceramics and Biocomposites) [5].

Xiang Wei

2006-08-09T23:59:59.000Z

402

Nano Res. 2012, 5(6): 412420412 Reshaping the Tips of ZnO Nanowires by Pulsed Laser  

E-Print Network [OSTI]

Nano Res. 2012, 5(6): 412­420412 Reshaping the Tips of ZnO Nanowires by Pulsed Laser Irradiation to the body of the ZnO nanowire, and that the center of the sphere is hollow. The growth mechanism of the hollow ZnO nanospheres is proposed to involve laser-induced ZnO evaporation immediately followed by re

Wang, Zhong L.

403

Structural and optical properties of MgO doped ZnO  

SciTech Connect (OSTI)

Samples of ZnO, Zn{sub 0.5}Mg{sub 0.5}O and MgO were prepared by co-precipitation method. X-ray diffraction (XRD) pattern infers that the sample of ZnO is in single-phase wurtzite structure (hexagonal phase, space group P6{sub 3}mc), MgO crystallizes in cubic Fd3m space group and Zn{sub 0.5}Mg{sub 0.5}O represents mixed nature of ZnO and MgO lattices. Similar features were observed from Raman spectroscopy. The energy band gaps estimated from UV-Vis spectroscopy are found to be 4.21 and 3.42 eV for ZnO and Zn{sub 0.5}Mg{sub 0.5}O samples respectively.

Verma, Kavita; Shukla, S.; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore-452001 (India); Varshney, M. [Department of Physics, M. B. Khalsa College, Raj Mohallah, Indore-452002 (India); Asthana, A. [Department of Chemistry, Govt. B. V. T. PG Autonomous College, Durg- 491001 (India)

2014-04-24T23:59:59.000Z

404

Mesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells  

E-Print Network [OSTI]

) as a derivative of dye-sensitized solar cells (DSCs) have attracted considerable attention and been regardedMesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells Ru Zhou for a CdS/CdSe quantum dot (QD) co-sensitized solar cell, which was constructed with the mesoporous TiO2

Cao, Guozhong

405

Optical transitions and multiphonon Raman scattering of Cu doped ZnO and MgZnO ceramics  

E-Print Network [OSTI]

of the Cu ion, Cu doped ZnO is a p-type semiconductor.13 Additionally, ferromagnetic behavior due were then dried and cold pressed at up to 3 tons for approximately 30 min, followed by annealing at a temperature of 10 K using a Bomem DA8 Fourier transform IR spectrometer and InSb detector. The micro

McCluskey, Matthew

406

Crystal Growth And Characterization of the Model High-Temperature Superconductor HgBa{sub 2}CuO{sub 4+{delta}}  

SciTech Connect (OSTI)

Since the discovery of high-transition-temperature (T{sub c}) superconductivity in La{sub 2-x}Ba{sub x}CuO{sub 4} in 1986, the study of the lamellar copper oxides has remained at the forefront of condensed matter physics. Apart from their unusually high values of T{sub c}, these materials also exhibit a variety of complex phenomena and phases. This rich behavior is a consequence of the lamellar crystal structures, formed of copper-oxygen sheets separated by charge reservoir layers, and of the strong electron-electron correlations in the copper-oxygen sheets. After two decades of intensive research, which has stimulated many valuable new insights into correlated electron systems in general, there remains a lack of consensus regarding the correct theory for high-T{sub c} superconductivity. The ultimate technological goal of room-temperature superconductivity might only be attained after the development of a deeper understanding of the mercury-based compounds HgBa{sub 2}Ca{sub n-1}Cu{sub n}OI{sub 2n+2+{delta}}, which currently exhibit the highest T{sub c}values. One very important issue in this regard is the role of electronic versus chemical and structural inhomogeneities in these materials, and the associated need to separate material-specific properties from those that are essential to superconductivity. Unfortunately, there has been remarkably little scientific work on the mercury-based compounds because sizable crystals have not been available; quantitative measurements of any kind would be invaluable benchmarks for testing the theories of high-T{sub c} superconductivity. The compounds HgBa{sub 2}Ca{sub n-1}Cu{sub n}OI{sub 2n+2+{delta}} can be viewed as model systems not only because of their record high-T{sub c} values, but also because of their high-symmetry crystal structures. Of particular interest is the simplest member of this materials family, HgBa{sub 2}CuO{sub 4+{delta}} (Hg1201), which possesses only one copper-oxygen sheet per unit cell (n = 1), as shown schematically in Figure 1a. The largest crystals obtained by previous growth methods do not exceed 1 mm{sup 3}, and hence are insufficient in size for detailed studies by many experimental techniques. Here we report a novel recipe for the growth of Hg1201 crystals as well as detailed sample characterization results, including initial inelastic magnetic neutron scattering data. We note that samples grown by the method described here have already enabled recent optical conductivity, inelastic X-ray scattering, and angle-resolved photoemission studies.

Zhao, Xudong; Yu, Guichuan; Cho, Yong-Chan; Chabot-Couture, Guillaume; Barisic, Neven; Bourges, Philippe; Kaneko, Nobuhisa; Li, Yuan; Lu, Li; Motoyama, Eugene M.; Vajk,; Greven, Martin; /Stanford U., Appl. Phys. Dept. /SLAC, SSRL /Jilin U. /Stanford U., Phys. Dept. /Saclay /NIST, Wash., D.C.

2007-03-16T23:59:59.000Z

407

Properties of electrospun CdS and CdSe filled poly(methyl methacrylate) (PMMA) nanofibres  

SciTech Connect (OSTI)

Graphical abstract: SEM images of CdS/PMMA showing coiling as loading of CdS nanoparticles is increased. Thermal stability is increased with increase in %loading of both CdS and CdSe nanoparticles. Research highlights: {yields} TOPO-capped CdS and HDA-capped CdSe nanoparticles were synthesized and fully characterized. {yields} The nanoparticles were mixed with the polymer, PMMA using electrospinning technique using 2, 5 and 10% weight loadings. {yields} The mixture was spun to produce fibres with optical and thermal properties showing significant change and also the increase in loading causing bending or spiraling. {yields} Both TEM images for nanoparticles and SEM for fibres shows the morphology and sizes of the particles. -- Abstract: Electrospinning technique was used to fabricate poly(methyl methacrylate) (PMMA) fibres incorporating CdS and CdSe quantum dots (nanoparticles). Different nanoparticle loadings (2, 5 and 10 wt% with respect to PMMA) were used and the effect of the quantum dots on the properties of the fibres was studied. The optical properties of the hybrid composite fibres were investigated by photoluminescence and UV-vis spectrophotometry. Scanning electron microscopy (SEM), X-ray diffraction and FTIR spectrophotometry were also used to investigate the morphology and structure of the fibres. The optical studies showed that the size-tunable optical properties can be achieved in the polymer fibres by addition of quantum dots. SEM images showed that the morphologies of the fibres were dependent on the added amounts of quantum dots. A spiral type of morphology was observed with an increase in the concentration of CdS and CdSe nanoparticles. Less beaded structures and bigger diameter fibres were obtained at higher quantum dot concentrations. X-ray diffractometry detected the amorphous peaks of the polymer and even after the quantum dots were added and the FTIR analysis shows that there was no considerable interaction between the quantum dots and the polymer fibres at low concentration of quantum dots however at higher concentrations some interactions were observed which shows that QDs were present on the surfaces of the fibres.

Mthethwa, T.P. [University of Johannesburg, Department of Chemical Technology, P.O. Box 17011, Doornfontein 2028 (South Africa)] [University of Johannesburg, Department of Chemical Technology, P.O. Box 17011, Doornfontein 2028 (South Africa); Moloto, M.J., E-mail: mmoloto@uj.ac.za [University of Johannesburg, Department of Chemical Technology, P.O. Box 17011, Doornfontein 2028 (South Africa); De Vries, A.; Matabola, K.P. [CSIR Materials Science and Manufacturing, 4 Gomery avenue, Summerstrand, Port Elizabeth 6000 (South Africa)] [CSIR Materials Science and Manufacturing, 4 Gomery avenue, Summerstrand, Port Elizabeth 6000 (South Africa)

2011-04-15T23:59:59.000Z

408

X-ray standing wave study of CdTe/MnTe/CdTe(001) heterointerfaces J. C. Boulliard,a)  

E-Print Network [OSTI]

features of the first stages of growth of ultrathin pseudomorphic MnTe 001 strained layers buried in CdTe on CdTe 001 substrates. Experiments with 004 and 113 reflecting planes show evidence of the presenceTe layers grown in CdTe 001 by molecular beam epitaxy. The results will be compared to high resolution

Boyer, Edmond

409

Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures  

SciTech Connect (OSTI)

Effect of irradiation with {gamma}-ray photons on the mechanism of charge transport in an n-CdS/p-CdTe heterostructure is considered. It is shown that the forward current-voltage characteristic of an n-CdS/p-CdTe heterostructure before and after irradiation is described by two exponential dependences: I = I{sub 01}exp(qV/C{sub 01}kT) and I = I{sub 02}exp(qV/C{sub 02}kT). It is found that, in the first portion of the current-voltage characteristic, the current is limited by thermoelectronic emission while, in the second portion, the current is limited by recombination of nonequilibrium charge carriers in the electrically neutral portion of a CdTe{sub 1-x}S{sub x} alloy at the n-CdS/p-CdTe heteroboundary. Anomalous dose dependences of parameters of the n-CdS/p-CdTe heterosystem are attributed to a variation in the degree of compensation of local centers at the CdS-CdTe{sub 1-x}S{sub x} interface and in the CdTe{sub 1-x}S{sub x} layers in relation to the dose of irradiation with {gamma}-ray photons.

Muzafarova, S. A., E-mail: samusu@rambler.ru; Mirsagatov, S. A., E-mail: mirsagatov@rambler.ru; Dzhamalov, F. N. [Academy of Sciences of the Republic of Uzbekistan, Physicotechnical Institute, Researh-and-Production Association Sun Physics (Uzbekistan)

2009-02-15T23:59:59.000Z

410

THE RELATIONSHIP OF CdS/CdTe CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY  

E-Print Network [OSTI]

-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing by charge in the bulk CdTe within the absorber. PATHWAYS TO INCREASED EFFICIENCY There are several general to realize in practice. One pathway is by increasing the net negative charge in the CdTe by "p-type doping

Sites, James R.

411

Local structures of polar wurtzites Zn1-xMgxO studied by raman and 67Zn/25Mg NMR spectroscopies and by total neutron scattering  

SciTech Connect (OSTI)

Research in the area of polar semiconductor heterostructures has been growing rapidly, driven in large part by interest in two-dimensional electron gas (2DEG) systems. 2DEGs are known to form at heterojunction interfaces that bear polarization gradients. They can display extremely high electron mobilities, especially at low temperatures, owing to spatial confinement of carrier motions. Recent reports of 2DEG behaviors in Ga{sub 1-x}Al{sub x}N/GaN and Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have great significance for the development of quantum Hall devices and novel high-electron-mobility transistors (HEMTs). 2DEG structures are usually designed by interfacing a polar semiconductor with its less or more polar alloys in an epitaxial manner. Since the quality of the 2DEG depends critically on interface perfection, as well as the polarization gradient at the heterojunction, understanding compositional and structural details of the parent and alloy semiconductors is an important component in 2DEG design and fabrication. Zn{sub 1-x}Mg{sub x}O/ZnO is one of the most promising heterostructure types for studies of 2DEGs, due to the large polarization of ZnO, the relatively small lattice mismatch, and the large conduction band offsets in the Zn{sub 1-x}Mg{sub x}O/ZnO heterointerface. Although 2DEG formation in Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have been researched for some time, a clear understanding of the alloy structure of Zn{sub 1-x}Mg{sub x}O is currently lacking. Here, we conduct a detailed and more precise study of the local structure of Zn{sub 1-x}Mg{sub x}O alloys using Raman and solid-state nuclear magnetic resonance (NMR), in conjunction with neutron diffraction techniques.

Proffen, Thomas E [Los Alamos National Laboratory; Kim, Yiung- Il [UCSB; Cadars, Sylvian [UCSB; Shayib, Ramzy [UCSB; Feigerle, Charles S [UNIV OF TENNESSEE; Chmelka, Bradley F [UCSB; Seshadri, Ram [UCSB

2008-01-01T23:59:59.000Z

412

Caractrisation en bruit des photodiodes P.I.N. Hg1-x Cdx Te 03BB = B. Orsal (*), R. Alabedra (*), C. Maille (*), C. Boisrobert (**), D. Morvan (**), J. Meslage (***) et  

E-Print Network [OSTI]

63 Caractérisation en bruit des photodiodes P.I.N. Hg1-x Cdx Te à 03BB = 1,3 03BCm B. Orsal (*), R montrent que la qualité des contacts des photodiodes de 2e génération est meilleure que celle obtenue sur.I.N. Hg1-xCdxTe photodiodes at 03BB = 1.3 03BCm by measurements of 1/f noise. The devices are manufactured

Paris-Sud XI, Université de

413

Multi-Pollutant Emissions Control: Pilot Plant Study of Technologies for Reducing Hg, SO3, NOx and CO2 Emissions  

SciTech Connect (OSTI)

A slipstream pilot plant was built and operated to investigate technology to adsorb mercury (Hg) onto the existing particulate (i.e., fly ash) by cooling flue gas to 200-240 F with a Ljungstrom-type air heater or with water spray. The mercury on the fly ash was then captured in an electrostatic precipitator (ESP). An alkaline material, magnesium hydroxide (Mg(OH){sub 2}), is injected into flue gas upstream of the air heater to control sulfur trioxide (SO{sub 3}), which prevents acid condensation and corrosion of the air heater and ductwork. The slipstream was taken from a bituminous coal-fired power plant. During this contract, Plant Design and Construction (Task 1), Start Up and Maintenance (Task 2), Baseline Testing (Task 3), Sorbent Testing (Task 4), Parametric Testing (Task 5), Humidification Tests (Task 6), Long-Term Testing (Task 7), and a Corrosion Study (Task 8) were completed. The Mercury Stability Study (Task 9), ESP Report (Task 11), Air Heater Report (Task 12) and Final Report (Task 14) were completed. These aspects of the project, as well as progress on Public Outreach (Task 15), are discussed in detail in this final report. Over 90% mercury removal was demonstrated by cooling the flue gas to 200-210 F at the ESP inlet; baseline conditions with 290 F flue gas gave about 26% removal. Mercury removal is sensitive to flue gas temperature and carbon content of fly ash. At 200-210 F, both elemental and oxidized mercury were effectively captured at the ESP. Mg(OH){sub 2} injection proved effective for removal of SO{sub 3} and eliminated rapid fouling of the air heater. The pilot ESP performed satisfactorily at low temperature conditions. Mercury volatility and leaching tests did not show any stability problems. No significant corrosion was detected at the air heater or on corrosion coupons at the ESP. The results justify larger-scale testing/demonstration of the technology. These conclusions are presented and discussed in two presentations given in July and September of 2005 and are included in Appendices E and F.

Michael L. Fenger; Richard A. Winschel

2005-08-31T23:59:59.000Z

414

Analysis of the Junction Properties of CdS/CdTe Devices in Substrate and Superstrate Configurations  

SciTech Connect (OSTI)

The best efficiency of CdS/CdTe devices fabricated in the substrate configuration reported to date is about 8%, which is about half the 17.3% reported for the conventional superstrate configuration. The performance of substrate devices is affected by lower open-circuit voltage (Voc), about 700 mV, and low fill factor (FF), which indicates that these devices are primarily limited by non-ideal junction properties and possibly by the ohmic contact to CdTe. In our study of the junction properties of superstrate devices, we show that lower-Voc devices (< 720 mV) with SnO2/CdTe and CdS/CdTe structures are true heterojunction devices. High charged defect density at the heterointerfaces is present in the depletion region and contributes to the dark current density, thereby reducing Voc. On the other hand, for higher-performance devices with Voc > 800 mV, the junction is between an n-type, Te-rich CdSTe alloy with a bandgap of 1.45 eV and p-type CdTe with a bandgap of 1.5 eV. Because the crystal structure of both the Te-rich alloy and the CdTe is cubic zinc blende, and the lattice mismatch between the two is minimal, the device in this case can be considered a quasi-homojunction. These higher-Voc devices are therefore affected less by the high charged defect density at the hetero-interface, which lies outside of the depletion region. We present analysis of the junction properties of our recent and improved substrate-configuration devices with Voc well in excess of 800 mV, FF approaching 60%, and efficiencies around 10%. We also compare devices fabricated in both the substrate and superstrate configurations and with comparable Voc in the range of 700 to more than 800 mV. Photoluminescence (PL) and temperature-dependent PL, current density-voltage and quantum efficiency analysis, and modulated reflectance measurements are used to study device properties.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Young, M. R.; Alberi, K.; Mascarenhas, A.; Gessert, T. A.

2011-01-01T23:59:59.000Z

415

Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper  

SciTech Connect (OSTI)

The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

2013-05-30T23:59:59.000Z

416

What causes high resistivity in CdTe  

SciTech Connect (OSTI)

Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donor-specific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

Biswas, Koushik [ORNL; Du, Mao-Hua [ORNL

2012-01-01T23:59:59.000Z

417

Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy  

SciTech Connect (OSTI)

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Zhao, Xin-Hao [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-11-04T23:59:59.000Z

418

Comparative Studies on Temperature Dependent I-V Characteristics of Al/(p)CdTe and Ni/(n)CdS Schottky Junctions and Their PV Effect  

SciTech Connect (OSTI)

Temperature dependent I-V characteristics of vacuum evaporated Al/(p)CdTe and Ni/(n)CdS Schottky junctions and their photovoltaic effects have been studied and compared. Different junction parameters such as ideality factors, barrier heights, Richardson's constant, short-circuit current density, fill factor, PV efficiency etc. were determined from their I-V characteristics. These parameters were found to change significantly on variation of temperature. The structures showed the change of PV effect. Efficiency found were 2.84% for Al/(p)CdTe and 4.44% for Ni hydro/(n)CdS. Polycrystalline nature, and continuous and ordered structure with bigger grain sizes of the CdS film shows more PV conversion efficiency in making Ni/(n)CdS junction as compare to Al/(p)CdTe junction. However these values were found to vary with doping concentration, and in hydrogen treated samples in both cases.

Wary, G. [Department of Physics, Cotton College, Guwahati-781001 (India); Kachari, T.; Rahman, A. [Department of Physics, Gauhati University, Guwahati-781014 (India)

2010-06-29T23:59:59.000Z

419

High contrast, CdTe portal scanner for radiation therapy  

SciTech Connect (OSTI)

This paper reports on one of the most promising new technologies for improving the qualify of radiation therapy, the use of real-time systems to produce portal images. In the authors' approach, they are constructing a linear array of 256 CdTe photovoltaic detectors attached to a very compact linear scanner, all of which will be mounted in a cassette shaped package to be located under the patient table. The high stopping power of the CdTe allows a high contrast image to be made using only a single Linac pulse per line, resulting in a high contrast image in under 5 seconds.

Entine, G.; Squillante, M.R.; Hahn, R.; Cirignano, L.J.; McGann, W. (Radiation Monitoring Devices, Inc., Watertown, MA (United States)); Biggs, P.J. (Massachusetts General Hospital, Boston, MA (United States))

1992-10-01T23:59:59.000Z

420

Experimental evidence of V{sub O}?Zn{sub i} complex to be intrinsic donor in bulk ZnO  

SciTech Connect (OSTI)

Theoretical evidence of V{sub O}?Zn{sub i} to be a native donor in bulk ZnO has been under debate. To resolve the issue, we annealed several pieces of as grown zinc rich n-type ZnO thin film having N{sub D} ? 3.26 10{sup 17} cm{sup ?3} grown by molecular beam epitaxy on Si (001) substrate in oxygen environment at 500C 800C, keeping a step of 100C for one hour, each. Room temperature Hall measurements demonstrated that free donor concentration decreased exponentially and Arrhenius plot yielded activation energy to be 1.20.02 eV. This value is in an agreement with the theoretically reported activation energy of V{sub O}?Zn{sub i} donor complex in ZnO.

Asghar, M.; Mahmood, K. [Department of Physics, The Islamia University of Bahawalpur 63100 (Pakistan); Hasan, M.-A; Tsu, R.; Ferguson, I. T. [Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223 (United States)

2014-02-21T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Acceptors in ZnO nanocrystals S. T. Teklemichael,1  

E-Print Network [OSTI]

as a buffer layer for growth of GaN-based devices,2 as a transparent conductive oxide Ref. 3 in solar cells,4- drate Zn CH3COO 2·2H2O and sodium hydrogen carbon- ate NaHCO3 are reacted at 200 °C for 3 h in an open cooling down to low tempera- ture. Electron paramagnetic resonance EPR measurements were carried out

McCluskey, Matthew

422

Impaired NFAT and NF?B activation are involved in suppression of CD40 ligand expression by ?{sup 9}-tetrahydrocannabinol in human CD4{sup +} T cells  

SciTech Connect (OSTI)

We have previously reported that ?{sup 9}-tetrahydrocannabinol (?{sup 9}-THC), the main psychoactive cannabinoid in marijuana, suppresses CD40 ligand (CD40L) expression by activated mouse CD4{sup +} T cells. CD40L is involved in pathogenesis of many autoimmune and inflammatory diseases. In the present study, we investigated the molecular mechanism of ?{sup 9}-THC-mediated suppression of CD40L expression using peripheral blood human T cells. Pretreatment with ?{sup 9}-THC attenuated CD40L expression in human CD4{sup +} T cells activated by anti-CD3/CD28 at both the protein and mRNA level, as determined by flow cytometry and quantitative real-time PCR, respectively. Electrophoretic mobility shift assays revealed that ?{sup 9}-THC suppressed the DNA-binding activity of both NFAT and NF?B to their respective response elements within the CD40L promoter. An assessment of the effect of ?{sup 9}-THC on proximal T cell-receptor (TCR) signaling induced by anti-CD3/CD28 showed significant impairment in the rise of intracellular calcium, but no significant effect on the phosphorylation of ZAP70, PLC?1/2, Akt, and GSK3?. Collectively, these findings identify perturbation of the calcium-NFAT and NF?B signaling cascade as a key mechanistic event by which ?{sup 9}-THC suppresses human T cell function. - Highlights: ?{sup 9}-THC attenuated CD40L expression in activated human CD4+ T cells. ?{sup 9}-THC suppressed DNA-binding activity of NFAT and NF?B. ?{sup 9}-THC impaired elevation of intracellular Ca2+. ?{sup 9}-THC did not affect phosphorylation of ZAP70, PLC?1/2, Akt, and GSK3?.

Ngaotepprutaram, Thitirat [Department of Pharmacology and Toxicology, Michigan State University (United States); Center for Integrative Toxicology, Michigan State University (United States); Kaplan, Barbara L.F. [Department of Pharmacology and Toxicology, Michigan State University (United States); Center for Integrative Toxicology, Michigan State University (United States); Neuroscience Program, Michigan State University (United States); Kaminski, Norbert E., E-mail: kamins11@msu.edu [Department of Pharmacology and Toxicology, Michigan State University (United States); Center for Integrative Toxicology, Michigan State University (United States)

2013-11-15T23:59:59.000Z

423

Electrodeposited ZnO films with high UV emission properties  

SciTech Connect (OSTI)

Highlights: {yields} Electrodeposition of ZnO from nitrate baths is investigated. {yields} The influence of process parameters on morphological and optical properties is studied. {yields} Experimental conditions to fabricate ZnO films with high UV emission were found. -- Abstract: We report here our results in the preparation of ZnO films with high UV band to band characteristic luminescence emission by potentiostatic electrodeposition. Zinc nitrate aqueous baths with different concentration and additives were employed for the preparation of the films on platinum substrates. We focused our research in determining how the electrodeposition bath composition, i.e. zinc nitrate concentration and addition of KCl or polyvinyl pyrolidone and applied overpotential influence the morphological and optical properties of the oxide films. Scanning electron microscopy was employed for characterizing the films in terms of morphology. Optical reflection, photoluminescence spectroscopy and cathodoluminescence were used for determining the optical characteristics of the samples. The morphology of the deposit varies from hexagonal prisms to platelets as a function of the deposition rate. This experimental parameter also influences the luminescence properties. We found that at low deposition rates high UV luminescent material is obtained.

Matei, Elena [National Institute of Materials Physics, PO Box MG 7, 77125 Magurele, Ilfov (Romania)] [National Institute of Materials Physics, PO Box MG 7, 77125 Magurele, Ilfov (Romania); Enculescu, Ionut, E-mail: encu@infim.ro [National Institute of Materials Physics, PO Box MG 7, 77125 Magurele, Ilfov (Romania)] [National Institute of Materials Physics, PO Box MG 7, 77125 Magurele, Ilfov (Romania)

2011-11-15T23:59:59.000Z

424

Hg and Se capture and fly ash carbons from combustion of complex pulverized feed blends mainly of anthracitic coal rank in Spanish power plants  

SciTech Connect (OSTI)

In this work, the petrology and chemistry of fly ashes produced in a Spanish power plant from the combustion of complex pulverized feed blends made up of anthracitic/meta-anthracitic coals, petroleum, and natural coke are investigated. It was found that the behavior of fly ash carbons derived from anthracitic coals follows relatively similar patterns to those established for the carbons from the combustion of bituminous coals. Fly ashes were sampled in eight hoppers from two electrostatic precipitator (ESP) rows. The characterization of the raw ashes and their five sieved fractions (from {gt}150 to {lt}25 {mu}m) showed that glassy material, quartz, oxides, and spinels in different proportions are the main inorganic components. As for the organic fraction, the dominant fly ash carbons are anisotropic carbons, mainly unburned carbons derived from anthracitic vitrinite. The concentration of Se and Hg increased in ashes of the second ESP row, this increase being related to the higher proportion of anisotropic unburned carbons, particularly those largely derived from anthracitic vitrinite in the cooler ashes of the ESP (second row) and also related to the decrease in the flue gas temperature. This suggests that the flue gas temperature plays a major role in the concentration of mercury for similar ratios of unburned carbons. It was also found that Hg is highly concentrated in the medium-coarser fractions of the fly ashes ({gt} 45 {mu}m), there being a positive relationship between the amount of these carbons, which are apparently little modified during the combustion process, in the medium-coarse fractions of the ashes and the Hg retention. According to the results obtained, further research on this type of fly ash could be highly productive. 28 refs., 10 figs., 8 tabs.

I. Surez-Ruiz; J.C. Hower; G.A. Thomas [Instituto Nacional del Carbon (INCAR-CSIC), Oviedo (Spain)

2007-01-15T23:59:59.000Z

425

Method of controlling the mercury vapor pressure in a photo-chemical lamp or vapor filter used for Hg.sup.196 enrichment  

DOE Patents [OSTI]

The present invention is directed to a method of eliminating the cold spot zones presently used on Hg.sup.196 isotope separation lamps and filters by the use of a mercury amalgams, preferably mercury - indium amalgams. The use of an amalgam affords optimization of the mercury density in the lamp and filter of a mercury enrichment reactor, particularly multilamp enrichment reactors. Moreover, the use of an amalgam in such lamps and/or filters affords the ability to control the spectral line width of radiation emitted from lamps, a requirement for mercury enrichment.

Grossman, Mark W. (Belmont, MA)

1993-01-01T23:59:59.000Z

426

Method of controlling the mercury vapor pressure in a photo-chemical lamp or vapor filter used for Hg[sup 196] enrichment  

DOE Patents [OSTI]

The present invention is directed to a method of eliminating the cold spot zones presently used on Hg[sup 196] isotope separation lamps and filters by the use of a mercury amalgams, preferably mercury - indium amalgams. The use of an amalgam affords optimization of the mercury density in the lamp and filter of a mercury enrichment reactor, particularly multilamp enrichment reactors. Moreover, the use of an amalgam in such lamps and/or filters affords the ability to control the spectral line width of radiation emitted from lamps, a requirement for mercury enrichment.

Grossman, M.W.

1993-02-16T23:59:59.000Z

427

Magnetism in undoped ZnS studied from density functional theory  

SciTech Connect (OSTI)

The magnetic property induced by the native defects in ZnS bulk, thin film, and quantum dots are investigated comprehensively based on density functional theory within the generalized gradient approximation + Hubbard U (GGA?+?U) approach. We find the origin of magnetism is closely related to the introduction of hole into ZnS systems. The relative localization of S-3p orbitals is another key to resulting in unpaired p-electron, due to Hund's rule. For almost all the ZnS systems under study, the magnetic moment arises from the S-dangling bonds generated by Zn vacancies. The charge-neutral Zn vacancy, Zn vacancy in 1? charge sate, and S vacancy in the 1+ charge sate produce a local magnetic moment of 2.0, 1.0, and 1.0??{sub B}, respectively. The Zn vacancy in the neutral and 1? charge sates are the important cause for the ferromagnetism in ZnS bulk, with a Curie temperature (T{sub C}) above room temperature. For ZnS thin film with clean (111) surfaces, the spins on each surface are ferromagnetically coupled but antiferromagnetically coupled between two surfaces, which is attributable to the internal electric field between the two polar (111) surfaces of the thin film. Only surface Zn vacancies can yield local magnetic moment for ZnS thin film and quantum dot, which is ascribed to the surface effect. Interactions between magnetic moments on S-3p states induced by hole-doping are responsible for the ferromagnetism observed experimentally in various ZnS samples.

Xiao, Wen-Zhi, E-mail: xiaowenzhi@hnu.edu.cn, E-mail: llwang@hun.edu.cn; Rong, Qing-Yan; Xiao, Gang [Department of Physics and Mathematics, Hunan Institute of Engineering, Xiangtan 411104 (China); Wang, Ling-ling, E-mail: xiaowenzhi@hnu.edu.cn, E-mail: llwang@hun.edu.cn [School of Physics and Microelectronics and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082 (China); Meng, Bo [College of Physics and Electronic Engineering, Caili University, Kaili 556011 (China)

2014-06-07T23:59:59.000Z

428

Supporting information for: Na-doped p-type ZnO , Faxian Xiu2  

E-Print Network [OSTI]

S1 Supporting information for: Na-doped p-type ZnO microwires Wei Liu1* , Faxian Xiu2 , Ke Sun1 flow was switched to argon followed by cooling to room temperature. After the growth, high-density Zn distribution of the Na Doped ZnO microwire 1.3 EDX line scans spectra #12;S3 Figure S3 a) a typical TEM image

Yang, Zheng

429

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N. Romeo, A. Bosio, A. Romeo, M. Bianucci, L. Bonci, C. Lenti  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N-mail:Nicola.Romeo@fis.unipr.it ABSTRACT: It has been demonstrated that CdTe/CdS thin film solar cells can exhibit an efficiency around 16 Film. 1 INTRODUCTION CdTe/CdS thin film solar cells have a good possibility to be produced on large

Romeo, Alessandro

430

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

431

Ion-beam-induced damage formation in CdTe  

SciTech Connect (OSTI)

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2011-06-01T23:59:59.000Z

432

The UNEP project CD4CDM Guidebook to  

E-Print Network [OSTI]

and procedures and about approaches for financial appraisal of CDM projects are among the reasons for this lackThe UNEP project CD4CDM Guidebook to Financing CDM Projects #12;Guidebook to Financing CDM Projects on this information. Independent legal and financial advice should always be sought when undertaking a CDM project

433

Insegnamenti Insegnamento cfu CdL SSD sem docente  

E-Print Network [OSTI]

25/09/2013 Insegnamenti 1/2 Insegnamento cfu CdL SSD sem docente Laboratorio di Fisica 12 FM FIS/01 annuale Bordi Laboratorio di Fisica 12 FM FIS/01 annuale Betti Laboratorio di Fisica 12 FM FIS/01 annuale Tramontano Biofisica Teorica 6 FM FIS/02 I anno, I sem DeMartino Interazioni Elettrodeboli 6 FM FIS/02 I anno

Roma "La Sapienza", Università di

434

Microfluidics for biological analysis: Triumphs and hurdles of CD platforms  

E-Print Network [OSTI]

Microfluidics for biological analysis: Triumphs and hurdles of CD platforms JONATHAN SIEGRIST1 , R on microfluidic technologies has become extensive, particularly in regards to the develop- ment of sample. Centrifugal microfluidic platforms based on the compact-disc format are discussed, along with the advantages

Joshi, Yogesh Moreshwar

435

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008  

SciTech Connect (OSTI)

Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

2009-04-01T23:59:59.000Z

436

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

437

Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles  

SciTech Connect (OSTI)

Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

Wu, F; Zaug, J; Young, C; Zhang, J Z

2006-11-29T23:59:59.000Z

438

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

439

Development of Materials and Structures for p-type Contacts in CdTe Solar Cells.  

E-Print Network [OSTI]

??Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance (more)

Ferizovic, Dino

2012-01-01T23:59:59.000Z

440

WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO  

E-Print Network [OSTI]

1 WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO.1016/S0030-4018(96)00516-0 #12;2 Photorefractive semiconductors like CdTe are characterized by a low

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for Improved Performance. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance. Abstract: We report on CdSCdTe photovoltaic devices...

442

THE ROLE OF ADAPTOR PROTEIN GADS IN CD8+ T CELL-MEDIATED IMMUNITY  

E-Print Network [OSTI]

CD8+ T cells are the branch of the adaptive immune system responsible for recognizing and killing tumor cells or cells infected with intracellular pathogens, such as Listeria monocytogenes (LM). However, when CD8+ T cells ...

Zhang, Elizabeth Yan

2011-12-31T23:59:59.000Z

443

Cathepsin S regulates class II MHC processing in human CD4+ HLA-DR+ T cells  

E-Print Network [OSTI]

Although it has long been known that human CD4+ T cells can express functional class II MHC molecules, the role of lysosomal proteases in the T cell class II MHC processing and presentation pathway is unknown. Using CD4+ ...

Ploegh, Hidde

444

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY  

E-Print Network [OSTI]

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY Dave Albin (CBD) and close spaced sublimation (CSS) respectively. CdTe growth is followed by either solution

Sites, James R.

445

Green synthesis of graphene nanosheets/ZnO composites and electrochemical properties  

SciTech Connect (OSTI)

A green and facile approach was demonstrated to prepare graphene nanosheets/ZnO (GNS/ZnO) composites for supercapacitor materials. Glucose, as a reducing agent, and exfoliated graphite oxide (GO), as precursor, were used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials. The small ZnO particles successfully anchored onto graphene sheets as spacers to keep the neighboring sheets separate. The electrochemical performances of these electrodes were analyzed by cyclic voltammetry, electrochemical impedance spectrometry and chronopotentiometry. Results showed that the GNS/ZnO composites displayed superior capacitive performance with large capacitance (62.2 F/g), excellent cyclic performance, and maximum power density (8.1 kW/kg) as compared with pure graphene electrodes. Our investigation highlight the importance of anchoring of small ZnO particles on graphene sheets for maximum utilization of electrochemically active ZnO and graphene for energy storage application in supercapacitors. - Graphical abstract: Glucose was used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials for supercapacitor. Results showed that the composites have superior capacitive performance. Highlights: > Graphene nanosheets were synthesized via using glucose as a reducing agent. > The reductant and the oxidized product are environmentally friendly. > ZnO grew onto conducting graphene sheets keeping neighboring sheets separate. > The structure improves the contact between the electrode and the electrolyte. > Results showed that these composites have good electrochemical property.

Wang Jun, E-mail: zhqw1888@sohu.com [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Gao Zan [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Li Zhanshuang; Wang Bin; Yan Yanxia; Liu Qi [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Mann, Tom [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Zhang Milin [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Jiang Zhaohua [College of Chemical Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2011-06-15T23:59:59.000Z

446

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins  

E-Print Network [OSTI]

Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of L...

Xiao, Zewen; Ueda, Shigenori; Toda, Yoshitake; Ran, Fan-Yong; Guo, Jiangang; Lei, Hechang; Matsuishi, Satoru; Hosono, Hideo; Kamiya, Toshio

2015-01-01T23:59:59.000Z

447

Structure of {sup 81}Ga populated from the {beta}{sup -} decay of {sup 81}Zn  

SciTech Connect (OSTI)

We report on the results of the {beta}-decay of {sup 81}Zn. The experiment was performed at the CERN ISOLDE facility in the framework of a systematic ultra-fast timing investigation of neutron-rich nuclei populated in the decay of Zn. The present analysis included {beta}-gated {gamma}-ray singles and {gamma}-{gamma} coincidences from the decay of {sup 81}Zn to {sup 81}Ga and leads to a new and much more extensive level scheme of {sup 81}Ga. A new half-life of {sup 81}Zn is provided.

Paziy, V.; Mach, H.; Fraile, L. M.; Olaizola, B.; Udias, J. M. [Grupo de Fisica Nuclear, Universidad Complutense, Madrid (Spain); Aprahamian, A.; Bucher, B. [Department of Physics, University of Notre Dame (United States); Bernards, C. [Institut fuer Kernphysik, Koeln, Germany. and Wright Nuclear Structure Laboratory, Yale University, New Haven, CT-06520 (United States); Briz, J. A. [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Chiara, C. J. [Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland, USA. and Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Dlouhy, Z. [Nuclear Physics Institute of the ASCR, Rez (Czech Republic); Gheorghe, I.; Ghita, D.; Lica, R.; Marginean, N.; Marginean, R.; Stanoiu, M.; Stroe, L. [National Institute for Physics and Nuclear Engineering, Magurele (Romania); Hoff, P. [Department of Chemistry, University of Oslo, Oslo (Norway); Koester, U. [Institut Laue Langevin, 6 Rue Jules Horowitz, F-38042 Grenoble Cedex 9 (France); and others

2013-06-10T23:59:59.000Z

448

Transport and magnetotransport study of Mg doped ZnO thin films  

SciTech Connect (OSTI)

We report negative magnetoresistance in pulsed laser deposited single phase ZnO and Mg{sub 0.268}Zn{sub 0.732}O films and attribute it to the presence of oxygen interstitials (O{sub i}) and zinc interstitials (Zn{sub i}) as observed in the X-ray photoelectron spectra of the films. An interesting feature of reduction of negative magnetoresistance at low temperatures and large fields in Mg{sub 0.268}Zn{sub 0.732}O film is observed and is explained by taking into account the localized scattering.

Agrawal, Arpana; Dar, Tanveer A., E-mail: tanveerphysics@gmail.com; Sen, Pratima [Laser Bhawan, School of Physics, Devi Ahilya University, Indore 452 017 (India); Phase, Deodatta M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India)

2014-04-14T23:59:59.000Z

449

Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement  

SciTech Connect (OSTI)

Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

Sharma, Vinay, E-mail: winn201@gmail.com; Rajaura, Rajveer Singh, E-mail: winn201@gmail.com [Centre for Converging Technologies, University of Rajasthan, Jaipur - 302004 (India); Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K. [Department of Physics, Thin Film and Membrane Science Lab., University of Rajasthan, Jaipur - 302004 (India); Sharma, S. S. [Department of Physics, Govt. Women Engineering College, Ajmer- 305002 (India)

2014-04-24T23:59:59.000Z

450

Crystal growth behaviour in Au-ZnO nanocomposite under different annealing environments and photoswitchability  

SciTech Connect (OSTI)

The growth of gold nanoparticles and ZnO nanorods in atom beam co-sputtered Au-ZnO nanocomposite (NC) system by annealing at two different ambient conditions is demonstrated in this work. Annealing in a furnace at 600 Degree-Sign C (air environment) confirmed the formation of ZnO nanorods surrounded with Au nanoparticles. In-situ annealing inside a transmission electron microscope (TEM) led to the formation of gold nanocrystals with different polygonal shapes. TEM micrographs were obtained in real time at intermediate temperatures of 300 Degree-Sign C, 420 Degree-Sign C, and 600 Degree-Sign C under vacuum. The growth mechanisms of Au nanocrystals and ZnO nanorods are discussed in the framework of Au-Zn eutectic and Zn-melting temperatures in vacuum and air, respectively. Current-voltage responses of Au-ZnO NC nanorods in dark as well as under light illumination have been investigated and photoswitching in Au-ZnO NC system is reported. The photoswitching has been discussed in terms of Au-ZnO band-diagram.

Mishra, Y. K.; Adelung, R. [Functional Nanomaterials, Institute for Materials Science, University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany); Chakravadhanula, V. S. K.; Hrkac, V.; Kienle, L. [Synthesis and Real Structure, Institute for Materials Science, University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany); Jebril, S. [Multicomponent Materials, Institute for Materials Science, University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany); Agarwal, D. C.; Avasthi, D. K. [Inter University Accelerator Centre, Post Box 10502, New Delhi 110067 (India); Mohapatra, S. [University School of Basic and Applied Sciences, GGS Indraprastha University, Dwaraka, New Delhi 110075 (India)

2012-09-15T23:59:59.000Z

451

Phase diagram, crystal chemistry and thermoelectric properties of compounds in the Ca?Co?Zn?O system  

SciTech Connect (OSTI)

In the Ca-Co-Zn-O system, we have determined the tie-line relationships and the thermoelectric properties, solid solution limits, and structures of two low-dimensional cobaltite series, Ca{sub 3}(Co, Zn){sub 4}O{sub 9-z} and Ca{sub 3}(Co,Zn){sub 2}O{sub 6-z} at 885 C in air. In Ca{sub 3}(Co,Zn){sub 4}O{sub 9-z}, which has a misfit layered structure, Zn was found to substitute in the Co site to a limit of Ca{sub 3}(Co{sub 3.8}Zn{sub 0.2})O{sub 9-z}. The compound Ca{sub 3}(Co,Zn){sub 2}O{sub 6-z} (n=1 member of the homologous series, Ca{sub n+2}(Co,Zn)n(Co,Zn)'O{sub 3n+3-z}) consists of one-dimensional parallel (Co,Zn){sub 2}O{sub 6}{sup 6-} chains that are built from successive alternating face-sharing (Co,Zn)O{sub 6} trigonal prisms and 'n' units of (Co,Zn)O{sub 6} octahedra along the hexagonal c-axis. Zn substitutes in the Co site of Ca{sub 3}Co{sub 2}O{sub 6} to a small amount of approximately Ca{sub 3}(Co{sub 1.95}Zn{sub 0.05})O{sub 6-z}. In the ZnO-CoO{sub z} system, Zn substitutes in the tetrahedral Co site of Co{sub 3}O{sub 4} to the maximum amount of (Co{sub 2.49}Zn{sub 0.51})O{sub 4-z} and Co substitutes in the Zn site of ZnO to (Zn{sub 0.94}Co{sub 0.06})O. The crystal structures of (Co{sub 2.7}Zn{sub 0.3})O{sub 4-z}, (Zn{sub 0.94}Co{sub 0.06})O, and Ca{sub 3}(Co{sub 1.95} Zn{sub 0.05})O{sub 6-z} are described. Despite the Ca{sub 3}(Co, Zn){sub 2}O{sub 6-z} series having reasonably high Seebeck coefficients and relatively low thermal conductivity, the electrical resistivity values of its members are too high to achieve high figure of merit, ZT.

Wong-Ng, W.; Luo, T.; Xie, W.; Tang, W.H.; Kaduk, J.A.; Huang, Q.; Yan, Y.; Chattopadhyay, S.; Tang, X.; Tritt, T. (IIT); (Clemson); (NIST); (Maryland); (Zhejiang); (Wuhan)

2011-11-17T23:59:59.000Z

452

Involvement of nuclear factor {kappa}B in platelet CD40 signaling  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer sCD40L induces TRAF2 association to CD40 and NF-{kappa}B activation in platelets. Black-Right-Pointing-Pointer I{kappa}B{alpha} phosphorylation downstream of CD40L/CD40 signaling is independent of p38 MAPK phosphorylation. Black-Right-Pointing-Pointer I{kappa}B{alpha} is required for sCD40L-induced platelet activation and potentiation of aggregation. -- Abstract: CD40 ligand (CD40L) is a thrombo-inflammatory molecule that predicts cardiovascular events. Platelets constitute the major source of soluble CD40L (sCD40L), which has been shown to potentiate platelet activation and aggregation, in a CD40-dependent manner, via p38 mitogen activated protein kinase (MAPK) and Rac1 signaling. In many cells, the CD40L/CD40 dyad also induces activation of nuclear factor kappa B (NF-{kappa}B). Given that platelets contain NF-{kappa}B, we hypothesized that it may be involved in platelet CD40 signaling and function. In human platelets, sCD40L induces association of CD40 with its adaptor protein the tumor necrosis factor receptor associated factor 2 and triggers phosphorylation of I{kappa}B{alpha}, which are abolished by CD40L blockade. Inhibition of I{kappa}B{alpha} phosphorylation reverses sCD40L-induced I{kappa}B{alpha} phosphorylation without affecting p38 MAPK phosphorylation. On the other hand, inhibition of p38 MAPK phosphorylation has no effect on I{kappa}B{alpha} phosphorylation, indicating a divergence in the signaling pathway originating from CD40 upon its ligation. In functional studies, inhibition of I{kappa}B{alpha} phosphorylation reverses sCD40L-induced platelet activation and potentiation of platelet aggregation in response to a sub-threshold concentration of collagen. This study demonstrates that the sCD40L/CD40 axis triggers NF-{kappa}B activation in platelets. This signaling pathway plays a critical role in platelet activation and aggregation upon sCD40L stimulation and may represent an important target against thrombo-inflammatory disorders.

Hachem, Ahmed [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada)] [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada); Yacoub, Daniel [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada) [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada); Centre Hospitalier Universite de Montreal, 264 boul. Rene-Levesque est, Montreal, Quebec, Canada H2X 1P1 (Canada); Zaid, Younes [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada)] [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada); Mourad, Walid [Universite de Montreal, Department of Medicine, 2900 boul. Edouard-Montpetit, Montreal, Quebec, Canada H3T 1J4 (Canada) [Universite de Montreal, Department of Medicine, 2900 boul. Edouard-Montpetit, Montreal, Quebec, Canada H3T 1J4 (Canada); Centre Hospitalier Universite de Montreal, 264 boul. Rene-Levesque est, Montreal, Quebec, Canada H2X 1P1 (Canada); Merhi, Yahye, E-mail: yahye.merhi@icm-mhi.org [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada) [Laboratory of Thrombosis and Hemostasis, Montreal Heart Institute, 5000 Belanger, Montreal, Quebec, Canada H1T 1C8 (Canada); Universite de Montreal, Department of Medicine, 2900 boul. Edouard-Montpetit, Montreal, Quebec, Canada H3T 1J4 (Canada)

2012-08-17T23:59:59.000Z

453

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

454

Visualization of Peroxynitrite-Induced Changes of Labile Zn[superscript 2+] in the Endoplasmic Reticulum with Benzoresorufin-based Fluorescent Probes  

E-Print Network [OSTI]

Zn[superscript 2+] plays essential roles in biology, and the homeostasis of Zn[superscript 2+] is tightly regulated in all cells. Subcellular distribution and trafficking of labile Zn[superscript 2+], and its inter-relation ...

Lin, Wei

455

Near-Zero Emissions Oxy-Combustion Flue Gas Purification Task 2: SOx/Nox/Hg Removal for High Sulfur Coal  

SciTech Connect (OSTI)

The goal of this project is to develop a near-zero emissions flue gas purification technology for existing PC (pulverized coal) power plants that are retrofitted with oxy-combustion technology. The objective of Task 2 of this project was to evaluate an alternative method of SOx, NOx and Hg removal from flue gas produced by burning high sulfur coal in oxy-combustion power plants. The goal of the program was not only to investigate a new method of flue gas purification but also to produce useful acid byproduct streams as an alternative to using a traditional FGD and SCR for flue gas processing. During the project two main constraints were identified that limit the ability of the process to achieve project goals. 1) Due to boiler island corrosion issues >60% of the sulfur must be removed in the boiler island with the use of an FGD. 2) A suitable method could not be found to remove NOx from the concentrated sulfuric acid product, which limits sale-ability of the acid, as well as the NOx removal efficiency of the process. Given the complexity and safety issues inherent in the cycle it is concluded that the acid product would not be directly saleable and, in this case, other flue gas purification schemes are better suited for SOx/NOx/Hg control when burning high sulfur coal, e.g. this project's Task 3 process or a traditional FGD and SCR.

Nick Degenstein; Minish Shah; Doughlas Louie

2012-05-01T23:59:59.000Z

456

Solar Energy Materials & Solar Cells 91 (2007) 13881391 Bifacial configurations for CdTe solar cells  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1388­1391 Bifacial configurations for CdTe solar We present a different back contact for CdTe solar cell by the application of only a transparent that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells

Romeo, Alessandro

457

PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY  

E-Print Network [OSTI]

349 PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY AND CONTACT BEHAVIOUR P. A. Preliminary results are reported on light scanning of CdTe detectors with a mechanical scanning system using is absorbed in CdTe with an absorption length of appro- ximately 10 gm. The two mirrors were driven

Paris-Sud XI, Université de

458

Optical implementation of entangled multi-spin states in a CdTe quantum well  

E-Print Network [OSTI]

Optical implementation of entangled multi-spin states in a CdTe quantum well J.M. Baoa , A in a CdTe quantum well. Our method, relying on the exchange interaction between optically excited holes; 78.67.De; 42.50.Md Keywords: A. CdTe quantum wells; D. Ultrafast optics; D. Quantum computation; D

Bao, Jiming

459

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe nanocrystal monolayers  

E-Print Network [OSTI]

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe transfer in the heterostructure of layer-by-layer spaced CdTe nanocrystal NC solids. We achieved highly demonstrated efficient FRET in LbL assembled bilayers of CdTe NCs. In another structure, alternating layers

Demir, Hilmi Volkan

460

USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*)  

E-Print Network [OSTI]

343 USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*) K. ZANIO. - The most direct method of increasing the resolution of CdTe gamma ray and x-ray detectors is to increase of Environmental and Biomedical Research. doped CdTe. Devices do not polarize as those having blocking contacts

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

462

USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN  

E-Print Network [OSTI]

375 USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN Nuclear Medicine. Cet ensemble emploie des détecteurs CdTe mesurant la transmission d'un faisceau collimaté de rayons X periods of prolonged bedrest or weightlessness. The unit employs CdTe detectors to mea- sure

Paris-Sud XI, Université de

463

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric generator  

E-Print Network [OSTI]

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric at nonresonant interaction, thus allowing a study of time-resolved carrier transport in CdTe crystals to be made space-charge SC electric fields have been studied in vanadium or germanium doped semi-insulating CdTe

Boyer, Edmond

464

IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS  

E-Print Network [OSTI]

141 IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS S. BRELANT The Aerospace been made in the quality of chlorine-doped CdTe crystals manufactured by the traveling heater method applications of CdTe gamma ray detectors has been the continuous measurement of ablating materials

Paris-Sud XI, Université de

465

CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe  

E-Print Network [OSTI]

117 CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe T. TAGUCHI, J and holes are obtained. REVUE DE PHYSIQUE APPLIQU?E TOME 12, F?VRIER 1977, PAGE 117 1. Introduction. - CdTe during donor doping since CdTe has a strong tendency for self compensation However, in spite of a great

Paris-Sud XI, Université de

466

APPLICATIONS OF CdTe. A REVIEW Mobil Tyco Solar Energy Corporation, 16 Hickory Drive  

E-Print Network [OSTI]

APPLICATIONS OF CdTe. A REVIEW F. V. WALD Mobil Tyco Solar Energy Corporation, 16 Hickory Drive sont également données. Abstract. 2014 The review considers the history of CdTe in short form advanced. II. APPLICATIONS OF CADMIUM TELLURIDE AND DEVICES BASED ON THIS MATERIAL. Section II. 1 : CdTe

Paris-Sud XI, Université de

467

CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI  

E-Print Network [OSTI]

255 CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI seront discutés dans le cas où elles sont mises en 0153uvre sur CdTe. Abstract. 2014 Thermally stimulated current (TSC) and space-charge limited current (SCLC) measurements have been performed in CdTe grown

Paris-Sud XI, Université de

468

BIOTELEMETRY BASED ON CdTe-DETECTORS J. BOJSEN, N. ROSSING, O. SOEBERG and S. VADSTRUP  

E-Print Network [OSTI]

radionuclide detectors (CdTe) 2-3 mm3 (developed by C. R. N. Strasbourg) have been tested with special to the skin for surface detection [2, 3]. Among several new semiconductor materials the cadmium telluride (CdTe. - The detector probe, developed by C. R. N., Strasbourg, France, consists of a CdTe- crystal (2-3 mm

Paris-Sud XI, Université de

469

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION  

E-Print Network [OSTI]

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION A.O. Pudov, M. Gloeckler, S of Mechanical Engineering Colorado State University, Ft. Collins, CO 80523 ABSTRACT CdTe solar cells were Copper is commonly used to form low-barrier contacts to p-type CdTe absorbers. Copper, however, is a fast

Sites, James R.

470

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water  

E-Print Network [OSTI]

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water Interface Matthew D present a versatile method for cadmium telluride (CdTe) tetrapod syn- thesis by utilizing multiple Te the tetrapod shape. CdTe tetra- pods are a promising inorganic semicon- ductor for photovoltaic cells due

Lin, Zhiqun

471

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD  

E-Print Network [OSTI]

185 CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD R. STUCK, J. C. MULLER techniques of cadmium tellu- ride crystals (CdTe) allowed to obtain high resistivity crystals of detector shape of the phase diagram of CdTe, it seemed interesting to characterize these materials in order

Paris-Sud XI, Université de

472

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

473

Biaxial CdTe/CaF2 films growth on amorphous surface , F. Tang a  

E-Print Network [OSTI]

electron microscopy Metal organic chemical vapor deposition A continuous and highly biaxially textured CdTe nanorods as a buffer layer. The interface between the CdTe film and CaF2 nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy

Wang, Gwo-Ching

474

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

475

USING CORIOLIS FORCE TO FACILITATE MOLECULAR TRANSPORTATION AND FLUID MIXING IN CD MICROFLUIDICS  

E-Print Network [OSTI]

e. USING CORIOLIS FORCE TO FACILITATE MOLECULAR TRANSPORTATION AND FLUID MIXING IN CD MICROFLUIDICS Coriolis Force to Facilitate Molecular Transportation and Fluid Mixing in CD Microfluidics Platform and Fluid mixing in compact disk (CD) microfluidic platform where centrifugal force is used as the driving

Kassegne, Samuel Kinde

476

Influence of Surface Preparation on Scanning Kelvin Probe Microscopy and Electron Backscatter Diffraction Analysis of Cross Sections of CdTe/CdS Solar Cells: Preprint  

SciTech Connect (OSTI)

In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe film. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.

Moutinho, H. R.; Dhere, R. G.; Jiang, C. S.; Al-Jassim, M. M.

2011-06-01T23:59:59.000Z

477

Piezospectroscopic study of substitutional Ni in ZnO  

SciTech Connect (OSTI)

The effect of uniaxial stress on the electronic {sup 3}T{sub 1}(F)?{sup 3}T{sub 2}(F) transitions of Ni{sup 2+} in ZnO at 4216, 4240, and 4247 cm{sup ?1} is investigated by means of Fourier transform IR absorption spectroscopy. A stress Hamiltonian is constructed which accounts for the behavior of these transitions under uniaxial stress. It is shown that the split pattern and polarization properties of these IR absorption lines are consistent with a dynamic Jahn-Teller effect in the {sup 3}T{sub 2}(F) state of Ni.

Lavrov, E. V.; Herklotz, F. [Technische Universitt Dresden, 01062 Dresden (Germany); Kutin, Y. S. [Kazan Federal University, Federal Center of Shared Facilities, 420008 Kazan (Russian Federation)

2014-02-21T23:59:59.000Z

478

ZnO nanoclusters: Synthesis and photoluminescence. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched FerromagnetismWaste andAnniversary, part 2Zenoss, VersionThe Role ofZnO nanoclusters:

479

Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition  

E-Print Network [OSTI]

and ul- traviolet (UV) optoelectronic devices. ZnO can be found easily as n-type because of Zn. Trans- parent electrodes in optoelectronic devices should have high visible transmittance, low

Cao, Hui

480

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montral, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montral, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "zn cd hg" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Residual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena  

E-Print Network [OSTI]

to be eliminated during deposition. Introduction In this study, the decay of the residual stressesResidual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena and Mehmet Ali Gulgunb. a istem@sabanciuniv.edu b m-gulgun@sabanciuniv.edu Keywords: ZnO, thin films, residual stress

Yanikoglu, Berrin

482

Structure and magnetic properties of rf thermally plasma synthesized Mn and MnZn ferrite nanoparticles  

E-Print Network [OSTI]

Structure and magnetic properties of rf thermally plasma synthesized Mn and Mn­Zn ferrite has previously been shown to be a viable route to producing nanocrystalline magnetite and Ni ferrite nanoparticles. In this work nanocrystalline powders of Mn and Mn­Zn ferrites have been synthesized using a 50 k

McHenry, Michael E.

483

An Analysis of Mn-Zn Ferrite Microstructure by Impedance Spectroscopy, STEM and EDS Characterisations.  

E-Print Network [OSTI]

An Analysis of Mn-Zn Ferrite Microstructure by Impedance Spectroscopy, STEM and EDS.loyau@satie.ens-cachan.fr Abstract AC resistivity measurement results on Mn-Zn sintered ferrite were analyzed in the 0.1-500 MHz of the main limitations in frequency increase is the energy dissipations by losses in ferrites that produce

Boyer, Edmond

484

Microstructural Evolution Model of the Sintering Behavior and Magnetic Properties of NiZn Ferrite Nanoparticles  

E-Print Network [OSTI]

Microstructural Evolution Model of the Sintering Behavior and Magnetic Properties of NiZn Ferrite jlwoods@andrew.cmu.edu, c SCalvin@slc.edu, d jhuth@Spang.co, e mm7g@andrew.cmu.edu Keywords: Ferrite, nanoparticle, sintering, microstructure. Abstract. The sintering of RF plasma synthesized NiZn ferrite

McHenry, Michael E.