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We encourage you to perform a real-time search of NLEBeta
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1

INFOGRAPHIC: Wide Bandgap Semiconductors  

Office of Energy Efficiency and Renewable Energy (EERE)

Breakthrough material technology called wide bandgap (WBG) semiconductors can help reduce the amount of wasted heat, boost energy efficiency, improve reliability, reduce cost, and decrease system size in existing and future power electronics.

2

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Energy Savers [EERE]

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

3

Wide-Bandgap Semiconductors  

SciTech Connect (OSTI)

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

4

Wide Bandgap Semiconductors: Pursuing the Promise  

Broader source: Energy.gov [DOE]

Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications.

5

Wide Bandgap Semiconductors for Clean Energy Workshop Agenda  

Energy Savers [EERE]

Wide Bandgap Semiconductors for Clean Energy Workshop Wednesday, July 25, 2012 Hilton Rosemont O'Hare, Chicago, IL Introduction Wide bandgap (WBG) semiconductors operate at...

6

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for...

7

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Broader source: Energy.gov (indexed) [DOE]

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power...

8

Wide Bandgap Semiconductors for Clean Energy Workshop  

Broader source: Energy.gov [DOE]

A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial use of WBG semiconductors. Improving the quality and reliability of WBG semiconductors—and reducing their manufacturing costs—could accelerate their use in automotive, power electronics, solid-state lighting, and other clean energy applications.

9

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Broader source: Energy.gov (indexed) [DOE]

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

10

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

11

Sandia National Laboratories: wide-bandgap semiconductor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

12

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

Presentation slides from the DOE Fuel Cell Technologies Office webinar, Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications, held on October 21, 2014.

13

Photocell utilizing a wide-bandgap semiconductor material  

DOE Patents [OSTI]

A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

Carlson, David E. (Yardley, PA); Williams, Brown F. (Princeton, NJ)

1984-06-05T23:59:59.000Z

14

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

Recording and text version of the Fuel Cell Technologies Office webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014.

15

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, at 12:00 p...

16

Webinar October 21: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, from 12:00 to 1:00 p.m. Eastern Daylight Time. Representatives of Cree Inc., leading innovators in the WBG electronics industry, will be presenting.

17

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents [OSTI]

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

18

System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors  

DOE Patents [OSTI]

A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

2013-10-22T23:59:59.000Z

19

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Broader source: Energy.gov (indexed) [DOE]

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

20

Wide Bandgap Extrinsic Photoconductive Switches  

SciTech Connect (OSTI)

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Sullivan, J S

2012-01-17T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

E-Print Network 3.0 - area semiconductor laser Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

areas of semiconductor... for conducting research on wide bandgap semiconductor optoelectronics in my research group, within the Center... bandgap III-Nitride semiconductor...

22

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

cost components of the PEM electrolyzer system while catalyst is a key challenge for fuel cell stack cost. Fuel Cell Stack Cost* Cost Breakdown *For PEMFC Stack cost, 500,000...

23

Wide Bandgap Semiconductors: Pursuing the Promise  

Broader source: Energy.gov (indexed) [DOE]

reducing losses by 50%. 2 Utility applications: WBG have the potential to reduce transformer size by a factor of ten or more. WBG-based power electronics could also accelerate...

24

Broadly defining lasing wavelengths in single bandgap-graded semiconductor nanowires  

E-Print Network [OSTI]

optoelectronic devices. KEYWORDS: Cadmium sulfide selenide, bandgap-graded nanowire, lasing, defining wavelength, mode selectivity Semiconductor NW lasers have recently attracted a great deal of interest, since they have large numbers of potential... applications in future photonic and optoelectronic devices.1-5 To push NW lasers closer to practical applications, some important challenges, for instance, wavelength variability, must be addressed. To date, a number of binary semiconductor NW lasers...

Yang, Zongyin; Wang, Delong; Meng, Chao; Wu, Zhemin; Wang, Yong; Ma, Yaoguang; Dai, Lun; Liu, Xiaowei; Hasan, Tawfique; Liu, Xu; Yang, Qing

2014-05-05T23:59:59.000Z

25

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Print Wednesday, 26 August 2009 00:00 Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

26

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Print Wednesday, 26 August 2009 00:00 Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

27

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications  

Science Journals Connector (OSTI)

Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for understanding the device performance. In relation to these, the surface pre-treatment and deposit

Peter Wellmann; Mikael Syv?j?rvi; Haiyan Ou

2014-01-01T23:59:59.000Z

28

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Print Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

29

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Print Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

30

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Print Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

31

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Print Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then behaves like a semiconductor. A team of researchers from Berkeley has engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. With precision control of its bandgap over a wide range, plus independent manipulation of its electronic states through electrical doping, dual-gated bilayer graphene becomes a remarkably flexible tool for nanoscale electronic devices.

32

Sandia National Laboratories: Sandia Wide-Bandgap Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Exhibition (EU PVSC) EC Top Publications Reference Model 5 (RM5): Oscillating Surge Wave Energy Converter Experimental Wave Tank Test for Reference Model 3 Floating- Point...

33

Webinar October 21: Opportunities for Wide Bandgap Semiconductor...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

applications ranging from fuel cell powered material handling equipment to fuel cell electric vehicles for the consumer and mass transit sectors, as well as the development of...

34

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect (OSTI)

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

35

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

36

Improved Energy Conversion Efficiency in Wide-Bandgap Cu(In,Ga)Se2 Solar Cells: Preprint  

SciTech Connect (OSTI)

This report outlines improvements to the energy conversion efficiency in wide bandgap (Eg>1.2 eV) solar cells based on CuIn1-xGaxSe2. Using (a) alkaline containing high temperature glass substrates, (b) elevated substrate temperatures 600?C-650?C and (c) high vacuum evaporation from elemental sources following NREL's three-stage process, we have been able to improve the performance of wider bandgap solar cells with 1.218% for absorber bandgaps ~1.30 eV and efficiencies ~16% for bandgaps up to ~1.45 eV. In comparing J-V parameters in similar materials, we establish gains in the open-circuit voltage and, to a lesser degree, the fill factor value, as the reason for the improved performance. The higher voltages seen in these wide gap materials grown at high substrate temperatures may be due to reduced recombination at the grain boundary of such absorber films. Solar cell results, absorber materials characterization, and experimental details are reported.

Contreras, M.; Mansfield, L.; Egaas, B.; Li, J.; Romero, M.; Noufi, R.; Rudiger-Voigt, E.; Mannstadt, W.

2011-07-01T23:59:59.000Z

37

Goal is to further development and manufacturing of wide bandgap semiconductors  

E-Print Network [OSTI]

enriched, pin-type fuel consisting of uranium dioxide pellets in zircaloy cladding. The fuel gives that will make high-power electronic chips and devices that are more energy-efficient possible. In June 1950

Young, R. Michael

38

Title: Device Physics and Applications of Intersubband Transitions in Wide-Bandgap Nitride Semiconductors  

E-Print Network [OSTI]

interconnections are realized using integrated optoelectronic devices operating at wavelengths to which silicon silicon circuits. The thin film optoelectronic devices are bonded directly to the stacked layers. devices. These optoelectronic devices operate at wavelengths to which the silicon is transparent, thus

Van Veen, Barry D.

39

Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application  

SciTech Connect (OSTI)

Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

1985-02-01T23:59:59.000Z

40

Wide Bandgap Power Electronics  

Office of Environmental Management (EM)

of WBG devices can significantly reduce cooling requirements. Reducing the 260 size of heat sinks, radiators, pumps and piping can result in cost savings from both a materials...

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Wide Bandgap Materials  

Broader source: Energy.gov [DOE]

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

42

Wide Bandgap Power Electronics  

Broader source: Energy.gov [DOE]

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

43

Wide Bandgap Materials  

Broader source: Energy.gov [DOE]

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

44

Wide Bandgap Materials  

Broader source: Energy.gov (indexed) [DOE]

proprietary, confidential, or otherwise restricted information 2011 U.S. DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer...

45

Wide Bandgap Materials  

Broader source: Energy.gov (indexed) [DOE]

- Acquiring new prototype devices. - Building new gate drivers and test set- ups for power switches with fast switching times . * Total project funding - DOE 100% * FY08 - 432K...

46

Wide Bandgap Materials  

Broader source: Energy.gov (indexed) [DOE]

Program Targets WBG devices maybe the enabling technology to meet the VTP inverter targets: - 13.4 kWl, 3.3 kW and 14.1 kWkg * Industrial suppliers of SiC and GaN...

47

Wide Bandgap Power Electronics  

Broader source: Energy.gov (indexed) [DOE]

- Acquiring new prototype devices. - Building new gate drivers and test set- ups for power switches with fast switching times * Total project funding - DOE 100% * FY08 - 432K *...

48

Wide Bandgap Materials  

Broader source: Energy.gov [DOE]

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

49

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

50

Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials  

Science Journals Connector (OSTI)

Highly conductive phases have been generated on different polytypes of SiC substrates using a laser direct-write technique. Incorporation of both n-type and p-type impurities into the SiC substrates was accomplis...

I. A. Salama; N. R. Quick; A. Kar

2005-08-01T23:59:59.000Z

51

DOE Announces Webinars on Zero Energy Ready Homes, Wide Bandgap Semiconductors for Fuel Cell Applications, and More  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE offers webinars to the public on a range of subjects, from adopting the latest energy efficiency and renewable energy technologies, to training for the clean energy workforce. Webinars are free; however, advanced registration is typically required. You can also watch archived webinars and browse previously aired videos, slides, and transcripts.

52

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

53

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide  

E-Print Network [OSTI]

Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

Pereira, LMC; Wahl, U

54

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”  

Science Journals Connector (OSTI)

Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O2/N2/CH4.....

Arghya N. Banerjee; Kalyan K. Chattopadhyay

2008-01-01T23:59:59.000Z

55

THZ EMISSION SPECTROSCOPY OF NARROW BANDGAP SEMICONDUCTORS  

E-Print Network [OSTI]

. Peter Persans, Member Rensselaer Polytechnic Institute Troy, New York December 5, 2005 (For Graduation

Wilke, Ingrid

56

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Print Wednesday, 26 August 2009 00:00 Graphene is the two-dimensional crystalline form of carbon whose extraordinary...

57

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key characteristic of all semiconductors, an energy gap (band gap) in its electronic band structure. A multi-institutional collaboration under the leadership of researchers with Berkeley Lab and the University of California, Berkeley, have now demonstrated that growing an epitaxial film of graphene on a silicon carbide substrate results in a significant band gap, 0.26 electron volts (eV), an important step toward making graphene useful as a semiconductor.

58

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key characteristic of all semiconductors, an energy gap (band gap) in its electronic band structure. A multi-institutional collaboration under the leadership of researchers with Berkeley Lab and the University of California, Berkeley, have now demonstrated that growing an epitaxial film of graphene on a silicon carbide substrate results in a significant band gap, 0.26 electron volts (eV), an important step toward making graphene useful as a semiconductor.

59

L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations  

SciTech Connect (OSTI)

Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences ?a, ?b, ?c between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z???? and Z???? transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to ?3 ???, ?1 ???, and ?2 ??? transitions, respectively. ?-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical anisotropy for the absorption and complex dielectric function, with more structured curves for incident light polarized along the 100 and 101 directions.

Zanatta, G.; Gottfried, C. [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil)] [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil); Silva, A. M. [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil)] [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil); Caetano, E. W. S., E-mail: ewcaetano@gmail.com [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil)] [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil); Sales, F. A. M.; Freire, V. N. [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)] [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)

2014-03-28T23:59:59.000Z

60

Bilayer Graphene Gets a Bandgap  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise...

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Development of fluorescent semi-conductor nanocrystal conjugates for in vitro and in vivo imaging applications  

E-Print Network [OSTI]

Semiconductor nanocrystals, also known as quantum dots (QDs), are promising imaging probes with characteristic optical properties: tunable bandgap from visible to infrared, narrow and symmetric emission features, broad ...

Han, Hee-Sun, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

62

Bandgap Engineering | Open Energy Information  

Open Energy Info (EERE)

Engineering Engineering Jump to: navigation, search Name Bandgap Engineering Place Woburn, Massachusetts Zip 1801 Sector Efficiency Product US-based company developing highly tunable and inexpensive methods for nano-structuring silicon and is applying these technologies to high efficiency photovoltaic systems and high capacity Li-ion batteries. References Bandgap Engineering[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Bandgap Engineering is a company located in Woburn, Massachusetts . References ↑ "Bandgap Engineering" Retrieved from "http://en.openei.org/w/index.php?title=Bandgap_Engineering&oldid=342515" Categories: Clean Energy Organizations

63

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

64

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices  

DOE Patents [OSTI]

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08T23:59:59.000Z

65

Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation  

SciTech Connect (OSTI)

Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene] (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH-PPV devices is due to Auger-assisted energy up-conversion process. Specifically, we propose that the up-conversion process is due to charge accumulation at the polymer/NPs interface. This model requires that holes should be the dominant carriers in the polymer and the polymer/ZnO NCs heterojunction should be a type II alignment. In order to determine the mechanism of the up-conversion process, we will characterize devices fabricated using polymers with different carrier transporting properties to determine whether hole accumulation at the polymer/nanocrystals is required. Likewise, we will also use NPs with different electronic structures to fabricate devices to determine how electron accumulation affects the up-conversion process. Finally, we will measure quantitatively the interface charge accumulation by electroabsorption and correlate the results with the up-conversion photoluminescence efficiency measurements under an applied electric field.

So, Franky [University of Florida] [University of Florida

2014-05-08T23:59:59.000Z

66

Laser Cooling of a Semiconductor by 40 Kelvin: An Optical Refrigerator Based on Cadmium Sulfide Nanoribbons  

E-Print Network [OSTI]

of semiconductors using CdS nanoribbons (or nanobelts) in this work. This net cooling effect is found: Optical refrigeration, Laser cooling of semiconductors, CdS nanobelts, anti-Stokes luminescence 1) doped crystals or glasses and direct bandgap semiconductors. Rare-earth doped materials were proposed

Xiong, Qihua

67

Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network [OSTI]

. Introduction Solar cells incorporating organic materials are interesting alternatives to conventional silicon solar cells because of their low production cost. Significant breakthroughs in solar cell performances artificial photovoltaic device. In a dye-sensitized solar cell the absorbing dye molecules lie at the large

68

Development of Spintronic Bandgap Materials  

SciTech Connect (OSTI)

The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.

Levy, Jeremy; Awschalom, David; Floro, Jerrold

2014-02-16T23:59:59.000Z

69

Band-Gap Engineering of Carbon Nanotubes with Grain Boundaries...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Band-Gap Engineering of Carbon Nanotubes with Grain Boundaries. Band-Gap Engineering of Carbon Nanotubes with Grain Boundaries. Abstract: Structure and electronic properties of...

70

Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory  

E-Print Network [OSTI]

phase-change nonvolatile memories”, IEEE Transactions on Device and Materialsphase change phenomena of GST (Germanium-Antimony-Tellurium) materialmaterials and structures are developed to replace the floating gate memory. Phase change

LI, ZONGLIN

2012-01-01T23:59:59.000Z

71

DOE Announces Webinars on Zero Energy Ready Homes, Wide Bandgap...  

Office of Environmental Management (EM)

The Energy Department Vehicle will present a live webcast titled "Updates on Energy and GHG Emissions Accounting Tools for Transportation" on Wednesday, October 22, from 1:00 p.m....

72

AMO's New Institute Focused on Wide Bandgap Power Electronics Manufacturing  

Broader source: Energy.gov [DOE]

The Next Generation Power Electronics National Manufacturing Institute announced by President Obama today will use $70 million provided by the U.S. Department of Energy's Advanced Manufacturing Office to support and manage its programs over the next five years.

73

AMO's New Institute Focused on Wide Bandgap Power Electronics...  

Broader source: Energy.gov (indexed) [DOE]

by the President in his 2013 State of the Union address and part of the National Network for Manufacturing Innovation (NNMI). The Institute will establish a collaborative...

74

Bandgap Engineering Inc | Open Energy Information  

Open Energy Info (EERE)

Bandgap Engineering Inc Bandgap Engineering Inc Name Bandgap Engineering Inc Address 6 Gill Street Place Woburn, Massachusetts Zip 01801 Sector Solar Product Developing high efficiency solar cells Year founded 2007 Number of employees 1-10 Phone number 781-902-0310 Website http://www.bandgap.com/ Coordinates 42.5106626°, -71.1476966° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.5106626,"lon":-71.1476966,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

75

How Bilayer Graphene Got a Bandgap  

ScienceCinema (OSTI)

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Feng Wang

2010-01-08T23:59:59.000Z

76

How Bilayer Graphene Got a Bandgap  

SciTech Connect (OSTI)

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Feng Wang

2009-06-02T23:59:59.000Z

77

How Bilayer Graphene Got a Bandgap  

ScienceCinema (OSTI)

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Wang, Feng

2013-05-29T23:59:59.000Z

78

Photocatalysis Using Semiconductor Nanoclusters  

SciTech Connect (OSTI)

We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

Thurston, T.R.; Wilcoxon,J.P.

1999-01-21T23:59:59.000Z

79

Bandgap Engineering in Disordered Graphene Two-dimensional atomic crystals attract attention due to their unique low-dimensional electron transport  

E-Print Network [OSTI]

Bandgap Engineering in Disordered Graphene ­Two-dimensional atomic crystals attract attention due-gap semiconductor graphene. The relativistic Dirac dispersion of electrons in graphene leads to an anomalous four large compared to electron Fermi wavelength. In high magnetic fields, the cleanest graphene samples

Weston, Ken

80

Bandgap Engineering in High-Efficiency Multijunction Concentrator Cells  

SciTech Connect (OSTI)

This paper discusses semiconductor device research paths under investigation with the aim of reaching the milestone efficiency of 40%. A cost analysis shows that achieving very high cell efficiencies is crucial for the realization of cost-effective photovoltaics, because of the strongly leveraging effect of efficiency on module packaging and balance-of systems costs. Lattice-matched (LM) GaInP/ GaInAs/ Ge 3-junction cells have achieved the highest independently confirmed efficiency at 175 suns, 25?C, of 37.3% under the standard AM1.5D, low-AOD terrestrial spectrum. Lattice-mismatched, or metamorphic (MM), materials offer still higher potential efficiencies, if the crystal quality can be maintained. Theoretical efficiencies well over 50% are possible for a MM GaInP/ 1.17-eV GaInAs/ Ge 3-junction cell limited by radiative recombination at 500 suns. The bandgap - open circuit voltage offset, (Eg/q) - Voc, is used as a valuable theoretical and experimental tool to characterize multijunction cells with subcell bandgaps ranging from 0.7 to 2.1 eV. Experimental results are presented for prototype 6-junction cells employing an active {approx}1.1-eV dilute nitride GaInNAs subcell, with active-area efficiency greater than 23% and over 5.3 V open-circuit voltage under the 1-sun AM0 space spectrum. Such cell designs have theoretical efficiencies under the terrestrial spectrum at 500 suns concentration exceeding 55% efficiency, even for lattice-matched designs.

King, R. R.; Sherif, R. A.; Kinsey, G. S.; Kurtz, S.; Fetzer, C. M.; Edmondson, K. M.; Law, D. C.; Cotal, H. L.; Krut, D. D.; Ermer, J. H.; Karam, N. H.

2005-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

82

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

83

Photonic bandgaps of periodic multilayers with diffuse interfaces  

E-Print Network [OSTI]

of the locations and widths of the forbidden bandgaps is standard [1­3]. However, generally the interfaces betweenPhotonic bandgaps of periodic multilayers with diffuse interfaces Jean-Michel André* , Philippe-michel.andre1@upmc.fr The photonic bandgap of periodic multilayers with diffuse interface is calculated

Boyer, Edmond

84

Scanning laser photoluminescence imaging system for nondestructive evaluation of direct bandgap materials  

E-Print Network [OSTI]

defects presented in direct bandgap semiconductors were found to severely influence the performance and reliability of the devices. Dislocations were known to not only increase the leakage current in both InP and GaAs photodiodes but also act... as sources of microplasmas in avalanche photodiodes )2, 3, 4]. Also the quantum efficiency of GaAsA!:Si LED was found to be strongly dependent on dislocation density )5]. Dislocations are known sources of dark line and dark spot defects in degraded LEDs...

Moon, Inchul

2012-06-07T23:59:59.000Z

85

106 nature materials | VOL 1 | OCTOBER 2002 | www.nature.com/naturematerials hereismuchcurrentinterestintheopticalpropertiesof semicon-  

E-Print Network [OSTI]

.Galliumnitride(GaN)isa wide-bandgap semiconductor of much practical interest, because it is widely used

Yang, Peidong

86

Emissivity Correcting Pyrometry of Semiconductor Growth  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

87

Spectral characterization of a photonic bandgap fiber for sensing applications  

Science Journals Connector (OSTI)

We study the measurand-induced spectral shift of the photonic bandgap edge of a hollow-core photonic crystal fiber. The physical measurands considered are strain, temperature,...

Aref, S Hashem; Amezcua-Correac, Rodrigo; Carvalho, Joel P; Frazão, Orlando; Santos, José L; Araújo, Francisco M; Latifi, Hamid; Farahi, Faramarz; Ferreira, Luis A; Knight, Jonathan C

2010-01-01T23:59:59.000Z

88

Photoacoustic measurement of bandgaps of thermoelectric materials  

E-Print Network [OSTI]

Thermoelectric materials are a promising class of direct energy conversion materials, usually consisting of highly doped semiconductors. The key to maximizing their thermal to electrical energy conversion lies in optimizing ...

Ni, George (George Wei)

2014-01-01T23:59:59.000Z

89

Electrically dependent bandgaps in graphene on hexagonal boron nitride  

SciTech Connect (OSTI)

We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for opening and modulating a bandgap in graphene as high as several hundred meV.

Kaplan, D., E-mail: daniel.b.kaplan.civ@mail.mil; Swaminathan, V. [U.S. Army RDECOM-ARDEC, Fuze Precision Armaments and Technology Directorate, Picatinny Arsenal, New Jersey 07806 (United States); Recine, G. [Department of Applied Physics, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States); Department of Physics and Engineering Physics, Fordham University, Bronx, New York 10458 (United States)

2014-03-31T23:59:59.000Z

90

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

91

Electric Power Generation Using Low Bandgap TPV Cells in a Gas?fired Heating Furnace  

Science Journals Connector (OSTI)

Low bandgap TPV cells are preferred for electric power generation in TPV cogeneration systems. Recently significant progress has been made in fabrication of low bandgap semiconductor TPV devices such as InGaAsSb and InGaAs cells. However it appears that only limited data are available in the literature with respect to the performance of these TPV cells in combustion?driven TPV systems. In the research presented in this paper power generation using recently?developed InGaAsSb TPV cells has been investigated in a gas?fired space heating appliance. The combustion performance of the gas burner associated with a broadband radiator was evaluated experimentally. The radiant power density and radiant efficiency of the gas?heated radiator were determined at different degrees of exhaust heat recuperation. Heat recuperation is shown to have a certain effect on the combustion operation and radiant power output. The electric output characteristics of the InGaAsSb TPV devices were investigated under various combustion conditions. It was found that the cell short circuit density was greater than 1 A/cm2 at a radiator temperature of 930°C when an optical filter was used. An electric power density of 0.54 W/cm2 was produced at a radiator temperature of 1190°C. Furthermore modeling calculations were carried out to reveal the influence of TPV cell bandgap and radiator temperature on power output and conversion efficiency. Finally the design aspects of combustion?driven TPV systems were analyzed showing that development of a special combustion device with high conversion level of fuel chemical energy to useful radiant energy is required to improve further the system efficiency.

K. Qiu; A. C. S. Hayden

2003-01-01T23:59:59.000Z

92

Microwave-Assisted Synthesis of II-VI Semiconductor Micro- and Nanoparticles towards Sensor Applications  

E-Print Network [OSTI]

be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm...

Majithia, Ravish

2013-01-15T23:59:59.000Z

93

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption  

E-Print Network [OSTI]

lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping success in tuning the optical cavity modes through (a) electric field modulation and (b) elemental doping

Xiong, Qihua

94

Extracting hot carriers from photoexcited semiconductor nanocrystals  

SciTech Connect (OSTI)

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

95

Light sources based on semiconductor current filaments  

DOE Patents [OSTI]

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

96

Strain-induced band-gap engineering of graphene monoxide and its effect on graphene  

Science Journals Connector (OSTI)

Using first-principles calculations we demonstrate the feasibility of band-gap engineering in two-dimensional crystalline graphene monoxide (GMO), a recently reported graphene-based material with a 1:1 carbon/oxygen ratio. The band gap of GMO, which can be switched between direct and indirect, is tunable over a large range (0–1.35 eV) for accessible strains. Electron and hole transport occurs predominantly along the zigzag and armchair directions (armchair for both) when GMO is a direct- (indirect-) gap semiconductor. A band gap of ?0.5 eV is also induced in graphene at the K? points for GMO/graphene hybrid systems.

H. H. Pu; S. H. Rhim; C. J. Hirschmugl; M. Gajdardziska-Josifovska; M. Weinert; J. H. Chen

2013-02-13T23:59:59.000Z

97

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

98

High Bandgap III-V Alloys for High Efficiency Optoelectronics...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a...

99

Frederic Laquai Seminar: Photocurrent Generation in Low-Bandgap...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

| 3:30 PM - 4:30 PM Frederic Laquai Head, Max Planck Research Group for Organic Optoelectronics Max Planck Institute for Polymer Research Photocurrent Generation in Low-Bandgap...

100

ADVERTISEMENT SEMICONDUCTORS  

E-Print Network [OSTI]

ADVERTISEMENT SEMICONDUCTORS: 07.14.2010 Nano-enabled Coating Makes Aircraft Invisible Humble paint... The oil-separating centrifuges will work, but they... MORE FROM IEEE SPECTRUM ROBOTICS: 06.16.2010 Robo.01.2006 Look Out, Beckham: Here Come the Robots At the "World Cup" for robots, the talk is that one day

Stryk, Oskar von

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Photons, Electrons and Holes: Fundamentals of Photocatalysis with Semiconductors  

Science Journals Connector (OSTI)

Although not all the heterogeneous photocatalysts are semiconductors, this type of solids represents, by far, the most representative and widely investigated photoactive materials. For that reason, the fundamentals

Juan Manuel Coronado

2013-01-01T23:59:59.000Z

102

Photoelectrochemistry, Electronic Structure, and Bandgap Sizes of Semiconducting Cu(I)-Niobates and Cu(I)-Tantalates  

SciTech Connect (OSTI)

Semiconducting metal-oxides have remained of intense research interest owing to their potential for achieving efficient solar-driven photocatalytic reactions in aqueous solutions that occur as a result of their bandgap excitation. The photocatalytic reduction of water or carbon dioxide to generate hydrogen or hydrocarbon fuels, respectively, can be driven on p-type (photocathodic) electrodes with suitable band energies. However, metal-oxide semiconductors are typically difficult to dope as p-type with a high mobility of carriers. The supported research led to the discovery of new p-type Cu(I)-niobate and Cu(I)-tantalate film electrodes that can be prepared on FTO glass. New high-purity flux syntheses and the full structural determination of several Cu(I)-containing niobates and tantalates have been completed, as well as new investigations of their optical and photoelectrochemical properties and electronic structures via density-functional theory calculations. For example, CuNbO3, Cu5Ta11O30 and CuNb3O8 were prepared in high purity and their structures were characterized by both single-crystal and powder X-ray diffraction techniques. These two classes of Cu(I)-containing compounds exhibit optical bandgap sizes ranging from ~1.3 eV to ~2.6 eV. Photoelectrochemical measurements of these compounds show strong photon-driven cathodic currents that confirm the p-type semiconductor behavior of CuNbO3, CuNb3O8, and Cu5Ta11O30. Incident-photon-to-current efficiencies are measured that approach greater than ~1%. Electronic-structure calculations based on density functional theory reveal the visible-light absorption stems from a nearly-direct bandgap transition involving a copper-to-niobium or tantalum (d10 to d0) charge-transfer excitations.

Maggard, Paul A.

2013-11-14T23:59:59.000Z

103

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect (OSTI)

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama)

2008-11-24T23:59:59.000Z

104

Low Loss Liquid Crystal Photonic Bandgap Fiber in the Near-Infrared Region  

E-Print Network [OSTI]

Low Loss Liquid Crystal Photonic Bandgap Fiber in the Near-Infrared Region Lara SCOLARI1 , Lei WEI1 in the spectral range of 1­2 mm. We achieve in the middle of the near-infrared transmission bandgap the lowest Keywords: photonic bandgap fiber, liquid crystals, absorption loss, all-in-fiber devices, tunability, near-infrared

Wu, Shin-Tson

105

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect (OSTI)

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

106

Web Growth of Semiconductors  

Science Journals Connector (OSTI)

A novel process for growth of diamond?lattice semiconductors is described and a model is proposed for the growth mechanism. For germanium the process yields extended thin flat sheets typically 1 cm wide and 0.1 mm thick of good crystalline quality and relatively flat {111} surfaces. The sheet or web freezes from a liquid film drawn up by surface tension between two coplanar dendrites which originate from a single seed and are grown from the melt simultaneously with the sheet. Resistivity throughout the sheet is quite uniform. Etching of germanium webs shows them to be essentially dislocation?free and does not reveal any microsegregation of impurities. Silicon and indium antimonide have also been grown in this manner.

S. O'Hara; A. I. Bennett

1964-01-01T23:59:59.000Z

107

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under...  

Broader source: Energy.gov (indexed) [DOE]

single phase * Finalizing control system design - Space vector PWM + sensored FOC, MATLABSimulink simulation, sensor signal conditioning, digital control platform, CAN...

108

Thermophotovoltaic energy conversion using photonic bandgap selective emitters  

DOE Patents [OSTI]

A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.

Gee, James M. (Albuquerque, NM); Lin, Shawn-Yu (Albuquerque, NM); Fleming, James G. (Albuquerque, NM); Moreno, James B. (Albuquerque, NM)

2003-06-24T23:59:59.000Z

109

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

110

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

111

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

112

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

113

Electrostatic screening by semiconductors  

E-Print Network [OSTI]

Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models...

Krcmar, Maja

2012-06-07T23:59:59.000Z

114

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

115

High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters  

DOE Patents [OSTI]

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Wanlass, Mark W

2014-05-27T23:59:59.000Z

116

Life-cycle Assessment of Semiconductors  

E-Print Network [OSTI]

The international technology roadmap for semiconductors,The international technology roadmap for semiconductors:The international technology roadmap for semiconductors,

Boyd, Sarah B.

2009-01-01T23:59:59.000Z

117

E-Print Network 3.0 - air-guiding photonic bandgap Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of Physics, Ultrafast Optics Group Collection: Engineering ; Physics 31 16:332:592 Optoelectronics II Contemporary Topics in OptoelectronicsPhotonics Summary: bands and bandgaps...

118

E-Print Network 3.0 - all-solid photonic bandgap Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Polytechnique, Centre de mathmatiques Collection: Mathematics 13 16:332:592 Optoelectronics II Contemporary Topics in OptoelectronicsPhotonics Summary: bands and bandgaps...

119

Super?bandgap radiation in a?Si  

Science Journals Connector (OSTI)

The nature of the super?bandgap radiation observed in a?Si and a?Si:H is investigated. This broad spectrum postulated to arise from localized states above the mobility gap exhibits many remarkable features. These same features occur in radiation from porous quartz but in that case the effect is known to be surface related.2 Using the Raman spectrum for calibration the strength of the signal from a?Si has been studied as a function of surface preparation. The results suggest the possibility that the radiation is a surface contaminant effect unrelated to the bulk states of the material.

B. A. Wilson

1981-01-01T23:59:59.000Z

120

Semiconductor bridge (SCB) detonator  

DOE Patents [OSTI]

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

High performance, high bandgap, lattice-mismatched, GaInP solar cells  

DOE Patents [OSTI]

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

2014-07-08T23:59:59.000Z

122

Light trapping design for low band-gap polymer solar cells  

E-Print Network [OSTI]

Light trapping design for low band-gap polymer solar cells Stephen Foster1,* and Sajeev John1,2 1 demonstrate numerically a 2-D nanostructured design for light trapping in a low band-gap polymer solar cell, "Light harvesting improvement of organic solar cells with self- enhanced active layer designs," Opt

John, Sajeev

123

Next-Generation Power Electronics: Reducing Energy Waste and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Addthis Watch the video above to learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene,...

124

Electronic properties and reliability of the silicon dioxide / silicon carbide interface.  

E-Print Network [OSTI]

??Silicon carbide has been preferred over other wide band-gap semiconductors for high power applications because of its unique ability to grow a thermal oxide, challenges… (more)

Rozen, John

2008-01-01T23:59:59.000Z

125

LASER METALLIZATION AND DOPING FOR SILICON CARBIDE DIODE FABRICATION AND ENDOTAXY.  

E-Print Network [OSTI]

??Silicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field… (more)

Tian, Zhaoxu

2006-01-01T23:59:59.000Z

126

Core/Shell heterojunction nanowire solar cell fabricated by lithographically patterned nanowire electrodeposition method  

E-Print Network [OSTI]

CdS, a wide bandgap II–VI semiconductor (2.4 eV), is one of the best known materials for n-type doping.

Ghosh, Somnath

2012-01-01T23:59:59.000Z

127

Videos | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

101: Biofuels Energy 101: Algae-to-Fuel Energy 101: Lighting Choices Energy 101: Hydroelectric Power Wide Bandgap Semiconductors Energy 101: Marine and Hydrokinetic Energy...

128

Fuel Cells News | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Fuel Cells News Fuel Cells News October 16, 2014 Webinar October 21: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications The...

129

Zinc oxysulfide ternary alloy nanocrystals: A bandgap modulated photocatalyst  

SciTech Connect (OSTI)

Herein, we report a green economic route for the synthesis of a series of Zinc Oxysulfide (ZOS) (ZnO{sub 1-x}S{sub x}; 0 {<=} x {>=} 1; x = Sulfur) alloys nanoparticles. The crystallographic features of ZnO, ZOS, and ZnS confirmed by X-Ray Diffraction and validated by Transmission Electron Microscopy reveal the variation of lattice spacing in binary and ternary compositions with homogenous elemental distribution. The photocatalytic analysis of ZOS (0.4) is performed and compared with Degussa P25 to ascertain its photocatalytic activity against methyl orange under irradiation of 365 nm UV-Vis light. A bandgap of 2.7 eV for ZOS (0.4) aptly establishes its prospects for sunlight driven photocatalysis.

Pandey, Shiv K. [Department of Chemistry, MN National Institute of Technology, Allahabad (India) [Department of Chemistry, MN National Institute of Technology, Allahabad (India); Nanotechnology Application Centre, University of Allahabad, Allahabad (India); Pandey, Shipra; Pandey, Avinash C. [Nanotechnology Application Centre, University of Allahabad, Allahabad (India)] [Nanotechnology Application Centre, University of Allahabad, Allahabad (India); Mehrotra, G. K. [Department of Chemistry, MN National Institute of Technology, Allahabad (India)] [Department of Chemistry, MN National Institute of Technology, Allahabad (India)

2013-06-10T23:59:59.000Z

130

Sintered molybdenum for a metallized ceramic substrate packaging for the wide-  

E-Print Network [OSTI]

of thermal expansion (CTE) matching that of SiC are needed. A metallized ceramic substrate based on aluminium the metal layer) and thermal conductivity (of the metal and ceramic layers). The most substrate usedSintered molybdenum for a metallized ceramic substrate packaging for the wide- bandgap devices

Boyer, Edmond

131

Invited paper History of Semiconductors  

E-Print Network [OSTI]

Abstract—The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices). Keywords—band theory, laser, Moore’s law, semiconductor, transistor.

Lidia ?ukasiak; Andrzej Jakubowski

132

Ferromagnetism in Oxide Semiconductors  

SciTech Connect (OSTI)

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, “Is it possible to create magnetic semiconductors that work at room temperature?”

Chambers, Scott A.; Droubay, Timothy C.; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

133

Mixed Semiconductor Nanocrystal Compositions  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

134

Transition metal oxides on organic semiconductors Yongbiao Zhao a  

E-Print Network [OSTI]

semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including toward in simplifying the fabrication process of the organic optoelectronic devices. Ã? 2014 Elsevier B], have gained great attention because of their wide applications in optoelectronic devices composed

Demir, Hilmi Volkan

135

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network [OSTI]

semiconductors and ceramics with desired thermalthermal conductivity of several polycrystalline semiconductors and ceramics,Thermal Conductivity of Polycrystalline Semiconductors and Ceramics

Wang, Zhaojie

2012-01-01T23:59:59.000Z

136

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

137

Analytical descriptions of the band structure of direct-band-gap zinc-blende-structure semiconductors in the k?p Kane model  

Science Journals Connector (OSTI)

In the framework of the well-known k?p Kane band theory, accurate analytical approximations of conduction- and valence-band dispersion of direct-band-gap zinc-blende-structure semiconductors are derived when the spin-orbit-splitting energy does not exceed the band-gap energy. These approximations include the interactions with the remote bands. The expressions of the eigenfunctions are also obtained. The present analysis elucidates and unifies previous analytical band descriptions.

H.-J. Drouhin and J. Peretti

1991-10-15T23:59:59.000Z

138

IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 4, 2005 5 A Compact Wide-band EBG Structure Utilizing  

E-Print Network [OSTI]

circuits can provide significant isolation. Transmission line theory developed in [9] is applied to obtainB isolation over 25% bandwidth. The analytical results evaluated based on the transmission line theory the bandgap behavior. To design a compact wide-band EBG, a structure constructed of three layers of ERC, each

Sarabandi, Kamal

139

Kansas Advanced Semiconductor Project  

SciTech Connect (OSTI)

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

140

Novel room temperature ferromagnetic semiconductors  

SciTech Connect (OSTI)

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

142

Tandem Polymer Solar Cells Featuring a Spectrally Matched Low-Bandgap Polymer  

SciTech Connect (OSTI)

Tandem solar cells provide an effective way to harvest a broader spectrum of solar radiation by combining two or more solar cells with different absorption bands. However, for polymer solar cells, the performance of tandem devices lags behind single-layer solar cells mainly due to the lack of a suitable low-bandgap polymer. Here, we demonstrate highly efficient single and tandem polymer solar cells featuring a low-bandgap conjugated polymer (PBDTT-DPP: bandgap, {approx}1.44 eV). A single-layer device based on the polymer provides a power conversion efficiency of {approx}6%. When the polymer is applied to tandem solar cells, a power conversion efficiency of 8.62% is achieved, which is, to the best of our knowledge, the highest certified efficiency for a polymer solar cell to date.

Dou, L.; You, J.; Yang, J.; Chen, C. C.; He, Y.; Murase, S.; Moriarty, T.; Emery, K.; Li, G.; Yang, Y.

2012-03-01T23:59:59.000Z

143

Higher Molecular Weight Leads to Improved Photoresponsivity Charge Transport and Interfacial Ordering in a Narrow Bandgap Semiconducting Polymer  

SciTech Connect (OSTI)

Increasing the molecular weight of the low-bandgap semiconducting copolymer, poly[(4,4-didoecyldithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl], Si-PDTBT, from 9 kDa to 38 kDa improves both photoresponsivity and charge transport properties dramatically. The photocurrent measured under steady state conditions is 20 times larger in the higher molecular weight polymer (HM{sub n} Si-PDTBT). Different decays of polarization memory in transient photoinduced spectroscopy measurements are consistent with more mobile photoexcitations in HM{sub n} Si-PDTBT relative to the lower molecular weight counterpart (LM{sub n} Si-PDTBT). Analysis of the current-voltage characteristics of field effect transistors reveals an increase in the mobility by a factor of 700 for HM{sub n} Si-PDTBT. Near edge X-ray absorption fine structure (NEXAFS) spectroscopy and grazing incidence small angle X-ray scattering (GISAXS) measurements demonstrate that LM{sub n} Si-PDTBT forms a disordered morphology throughout the depth of the film, whereas HM{sub n} Si-PDTBT exhibits pronounced {pi}-{pi} stacking in an edge-on configuration near the substrate interface. Increased interchain overlap between polymers in the edge-on configuration in HM{sub n} Si-PDTBT results in the higher carrier mobility. The improved optical response, transport mobility, and interfacial ordering highlight the subtle role that the degree of polymerization plays on the optoelectronic properties of conjugated polymer based organic semiconductors.

M Tong; S Cho; J Rogers; K Schmidt; B Hsu; D Moses; R Coffin; E Kramer; G Bazan; A Heeger

2011-12-31T23:59:59.000Z

144

Semiconductor radiation detector  

DOE Patents [OSTI]

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

2002-01-01T23:59:59.000Z

145

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents [OSTI]

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, C.R.H.; Dishman, J.L.

1985-10-11T23:59:59.000Z

146

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents [OSTI]

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

147

Field-Induced Spin-Flop in Antiferromagnetic Semiconductors with Commensurate and Incommensurate Magnetic Structures: Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS)  

Science Journals Connector (OSTI)

Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS), which are among the first magnetic semiconductors with the wurtz-kesterite structure, exhibit antiferromagnetism with TN ? 6 and 4 K, respectively. Both compounds undergo a conventional metamagnetic transition that ...Divalent ions are directed to specific locations within the structures of the Li2?Fe?IV?S4 diamond-like materials to generate antiferromagnetic ordering. Both compounds undergo a reversible spin-flop transition. Changing the tetravalent ion in these materials alters the bandgaps and magnetic structures. The indirect-gap (Eg = 1.4 eV) semiconductor Li2FeGeS4 has a magnetic structure that is commensurate with the nuclear structure, while Li2FeSnS4 has a direct bandgap (Eg = 1.9 eV) and an incommensurate magnetic structure.

Jacilynn A. Brant; Clarina dela Cruz; Jinlei Yao; Alexios P. Douvalis; Thomas Bakas; Monica Sorescu; Jennifer A. Aitken

2014-11-14T23:59:59.000Z

148

Freescale Semiconductor Successfully Implements an Energy Management System  

Broader source: Energy.gov [DOE]

This case study describes how Freescale Semiconductor implemented projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than $2 million each year.

149

High power semiconductor laser diode arrays  

Science Journals Connector (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes single?facet cw output in exces of 5 Watts has been demonstrated and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi?cw (150 usec pulse) output in excesss of 11 Watts and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Peter S. Cross

1986-01-01T23:59:59.000Z

150

High power semiconductor laser diode arrays  

SciTech Connect (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

151

Energy Band-Gap Engineering of Graphene Nanoribbons Melinda Y. Han,1  

E-Print Network [OSTI]

, New York, New York 10027, USA 2 Department of Physics, Columbia University, New York, New York 10027Energy Band-Gap Engineering of Graphene Nanoribbons Melinda Y. Han,1 Barbaros O¨ zyilmaz,2 Yuanbo an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal

Kim, Philip

152

Method of passivating semiconductor surfaces  

DOE Patents [OSTI]

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

153

Semiconductor devices incorporating multilayer interference regions  

DOE Patents [OSTI]

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

154

Avalanche semiconductor radiation detectors  

SciTech Connect (OSTI)

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si{sub x}O{sub y} is described. A uniform avalanche process with gain from 10{sup 3} to 10{sup 5} can be reached depending on the conductivity of SiC and Si{sub x}O{sub y} layers. Two types of avalanche photodetectors designed for applications in wavelength range 500--10,00 nm with quantum efficiency 60 {+-} 10% (650 nm) and 200--700 nm with quantum efficiency 60 {+-} 15% (450 nm) are presented.

Sadygov, Z.Y. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation); [Azerbaijan Academy of Sciences, Baku (Azerbaijan). Physics Inst.; Zheleznykh, I.M.; Kirillova, T.A. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research] [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Malakhov, N.A.; Jejer, V.N. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation)

1996-06-01T23:59:59.000Z

155

Method Of Transferring Strained Semiconductor Structures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

156

Semiconductor Physics at the Optical Sciences Center  

Science Journals Connector (OSTI)

This talk reviews semiconductor physics experiments and theory at the Optical Sciences Center including optical bistability, femtosecond dynamics, as well as semiconductor laser...

Koch, Stephan W

157

Process for producing chalcogenide semiconductors  

DOE Patents [OSTI]

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

158

Variable temperature semiconductor film deposition  

DOE Patents [OSTI]

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

159

Electronic materials with a wide band gap: recent developments  

Science Journals Connector (OSTI)

Usually, semiconductors with a band gap Eg 3 eV or larger are called wide band gap materials. Their optical emission can span the whole of the visible spectrum, enabling the development of devices for solid-state lighting. In addition, a large Eg results in a high electrical breakthrough field, which is interesting for high-power electronics.

Klimm, D.

2014-08-29T23:59:59.000Z

160

Semiconductor radiation detector  

DOE Patents [OSTI]

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material  

DOE Patents [OSTI]

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Sopori, Bhushan; Rangappan, Anikara

2014-11-25T23:59:59.000Z

162

Triple photonic band-gap structure dynamically induced in the presence of spontaneously generated coherence  

SciTech Connect (OSTI)

We study a cold atomic sample coherently driven into the five-level triple-{Lambda} configuration for attaining a dynamically controlled triple photonic band-gap structure. Our numerical calculations show that three photonic band gaps with homogeneous reflectivities up to 92% can be induced on demand around the probe resonance by a standing-wave driving field in the presence of spontaneously generated coherence. All these photonic band gaps are severely malformed with probe reflectivities declining rapidly to very low values when spontaneously generated coherence is gradually weakened. The triple photonic band-gap structure can also be attained in a five-level chain-{Lambda} system of cold atoms in the absence of spontaneously generated coherence, which however requires two additional traveling-wave fields to couple relevant levels.

Gao Jinwei; Bao Qianqian; Wan Rengang; Cui Cuili; Wu Jinhui [College of Physics, Jilin University, Changchun 130012 (China)

2011-05-15T23:59:59.000Z

163

Final Report: Bandgap-Engineered Thermophotovoltaic Devices for Hi Efficiency Radioisotope Power, July 9, 1996 - July 8, 1999  

SciTech Connect (OSTI)

During Phase I the feasibility of fabricating high-performance, low bandgap (0.58ev)PV cells by thermally diffusing p-n junctions in GaSb based quaternary materials was established. During phase II, bandgap engineered thermophotovoltaic (TPV) cells were optimized, development of a low-cost build source material for quaternary devices was investigated, and a diesel-fueled, TPV test-bed was built and tested allowing its performance to be characterized.

Sundaram, V; Morgan, M.D.; Horne, W.E.

2000-03-15T23:59:59.000Z

164

Self-Assembled Nanostructured Photoanodes with Staggered Bandgap for Efficient Solar Energy Conversion  

Science Journals Connector (OSTI)

Self-Assembled Nanostructured Photoanodes with Staggered Bandgap for Efficient Solar Energy Conversion ... X-ray photoelectron spectroscopy (XPS) and diffuse reflectance measurements confirm the staggered band-alignment between Ta2O5 and WO3, which facilitates the separation of charge carriers. ... The TA measurements showed the elimination of trap states upon annealing Ta–W–O nanotubes and, hence, minimizing the charge carrier trapping, whereas the trap states remain in pristine Ta2O5 nanotubes even after annealing. ...

Ramy Nashed; Paul Szymanski; Mostafa A. El-Sayed; Nageh K. Allam

2014-04-14T23:59:59.000Z

165

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 7, APRIL 1, 2006 805 Antimonide Semiconductor Saturable Absorber for  

E-Print Network [OSTI]

, AlGaAsSb is lat- tice-matched to InP, but its absorption edge is not as steep as the one of InGaAsPGaAsSb, with a wide bandgap tunability (0.8­2.3 eV) and intrinsically low modu- lation depth [11], [12]. Similar to InGaAsP- eters such as the saturation fluence, the modulation depth, the inverse absorption, the nonsaturable

Keller, Ursula

166

Mathematical Modeling of Semiconductor Devices  

E-Print Network [OSTI]

fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jüngel, Ansgar

167

Seebeck coefficient in organic semiconductors  

E-Print Network [OSTI]

Seebeck coefficient in organic semiconductors A dissertation submitted for the degree of Doctor of Philosophy Deepak Venkateshvaran Fitzwilliam College & Optoelectronics Group, Cavendish Laboratory University of Cambridge February 2014 “The end...

Venkateshvaran, Deepak

2014-07-01T23:59:59.000Z

168

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect  

Science Journals Connector (OSTI)

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from “light”-hole to “heavy”-hole-like states.

Hai-Bin Wu, Kai Chang, and Jian-Bai Xia

2002-04-22T23:59:59.000Z

169

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents [OSTI]

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20T23:59:59.000Z

170

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents [OSTI]

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

2012-07-10T23:59:59.000Z

171

World Wide Chemistry  

Science Journals Connector (OSTI)

World Wide Chemistry ... Plutonium has been produced for the first time at Britain's Atomic Energy Research Establishment at Harwell. ... Indian Ore Reserves ...

G. ABRAHAMSON; RAFFAELE SANSONE

1949-04-11T23:59:59.000Z

172

Optical Properties and Potential Applications of Doped Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Abstract:...

173

Waste minimization in semiconductor processing  

SciTech Connect (OSTI)

The US semiconductor industry uses 5--7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. Of the available technologies, dry chemical scrubbing is the most effective means of minimizing arsenic containing waste generated from semiconductor effluents. A copper oxide based media has been identified which has high capacity, high efficiency and treats the spectrum of gases used in MOCVD processes. Reclaim and recovery of spent scrubber media has the potential to drastically reduce arsenic waste from semiconductor manufacturing.

Hardwick, S.J.; Mailloux, J.C. [Novapure Corp., Danbury, CT (United States)

1994-12-31T23:59:59.000Z

174

Electromagnetic compatibility in semiconductor manufacturing  

SciTech Connect (OSTI)

Electromagnetic Interference (EMI) causes problems in semiconductor manufacturing facilities that range from nuisances to major disruptions of production. In many instances, these issues are addressed in a reactionary rather than proactive manner by individuals who do not have the experience or the equipment necessary to combat EMI problems in a timely, cost effective manner. This approach leads to expensive retrofits, reduced equipment availability, long recovery times, and in some cases, line yield impacts. The goal of electromagnetic compatibility (EMC) in semiconductor manufacturing is to ensure that semiconductor process, metrology, and support equipment operate as intended without being affected by electromagnetic disturbances either transmitted through air (radiated interference), or transferred into the equipment via a conductive media (conducted interference). Rather than being neglected until serious issues arise, EMC should be considered in the early stages of facility design, in order to gain the most benefit at the lowest cost.

Montoya, J.A. [Intel Corp., Hillsboro, OR (United States)

1995-12-31T23:59:59.000Z

175

Semiconductor nanocrystal-based phagokinetic tracking  

DOE Patents [OSTI]

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18T23:59:59.000Z

176

Semiconductor electrode with improved photostability characteristics  

DOE Patents [OSTI]

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Frank, A.J.

1985-02-19T23:59:59.000Z

177

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

178

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

179

the World Wide Web  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technical report has been made electronically available on the World Wide Web through a contribution from Walter L. Warnick In honor of Enrico Fermi Leader of the first nuclear...

180

Semiconductor-based optical refrigerator  

DOE Patents [OSTI]

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Mechanical scriber for semiconductor devices  

DOE Patents [OSTI]

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

182

Celebrating Faculty Excellence acclaiming the awards, honors,  

E-Print Network [OSTI]

of the world's foremost experts on doping wide band-gap semiconductors, creating blue and ultraviolet light-emitting diodes (leds) and lasers that have led to improved consumer products, including sharper laser printers

183

Low temperature lithographically patterned metal oxide transistors for large area electronics  

E-Print Network [OSTI]

Optically transparent, wide bandgap metal oxide semiconductors are a promising candidate for large-area electronics technologies that require lightweight, temperature-sensitive flexible substrates. Because these thin films ...

Wang, Annie I. (Annie I-Jen), 1981-

2011-01-01T23:59:59.000Z

184

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy  

SciTech Connect (OSTI)

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-11-01T23:59:59.000Z

185

Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials  

SciTech Connect (OSTI)

We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

Dickinson, J. T. [Washington State University] [Washington State University

2014-04-05T23:59:59.000Z

186

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters  

SciTech Connect (OSTI)

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

WILCOXON,JESS P.

2000-04-17T23:59:59.000Z

187

First-principles simulations of exciton diffusion in organic semiconductors  

Science Journals Connector (OSTI)

Exciton diffusion is crucial for the performance of organic semiconductors in photovoltaic and solid state lighting applications. We propose a first-principles approach that can predict exciton dynamics in organic semiconductors. The method is based on time-dependent density functional theory to describe the energy and many-body wave functions of excitons. Nonadiabatic ab initio molecular dynamics is used to calculate phonon-assisted transition rates between localized exciton states. Using Monte Carlo simulations, we determine the exciton diffusion length, lifetime, diffusivity, and harvesting efficiency in poly(3-hexylthiophene) polymers at different temperatures, which agree very well with the experiments. We find that exciton diffusion is primarily determined by the density of states of low-energy excitons. A widely speculated diffusion mechanism, namely an initial downhill migration followed by thermally activated migration, is confirmed and elucidated by the simulations. Some general guidelines for designing more efficient organic solar cells are obtained from the simulations.

Xu Zhang; Zi Li; Gang Lu

2011-12-22T23:59:59.000Z

188

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD  

SciTech Connect (OSTI)

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

2014-05-15T23:59:59.000Z

189

Morphological Characterization of a LowBandgap Crystalline Polymer:PCBM Bulk Heterojunction Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Full paper 1 wileyonlinelibrary.com Adv. Energy Mater. 2011, XX, 1-9 www.MaterialsViews.com www.advenergymat.de 1. Introduction Bulk heterojunction (BHJ) organic photovoltaic (OPV) sys- tems have attracted increasing interest due to their low-cost and potential for highly scalable solution processing. How- ever, achieving efficiencies in excess of 10% is an important milestone in making OPV devices viable economically. While there have been advances in the synthesis of novel low bandgap polymers and block copolymers with tailored morphologies, translating these advances to large scale production mandates understanding the morphology of the active layer developed during processing, the relationship of the

190

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters  

SciTech Connect (OSTI)

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Wanlass, Mark W. (Golden, CO)

2001-01-01T23:59:59.000Z

191

PHYSICAL REVIEW B 90, 115415 (2014) Geometrically induced transitions between semimetal and semiconductor in graphene  

E-Print Network [OSTI]

and semiconductor in graphene Marc Dvorak and Zhigang Wu* Department of Physics, Colorado School of Mines, Golden of graphene remains an outstanding problem in nanoscience, which precludes the practical method of patterning graphene from being widely adopted for making graphene-based electronic and optoelectronic devices, because

Wu, Zhigang

192

Optical devices featuring textured semiconductor layers  

DOE Patents [OSTI]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

193

Optical devices featuring textured semiconductor layers  

DOE Patents [OSTI]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

194

Photon Statistics of Semiconductor Light Sources.  

E-Print Network [OSTI]

??In recent years, semiconductor light sources have become more and more interesting in terms of applications due to their high efficiency and low cost. Advanced… (more)

Aßmann, Marc

2010-01-01T23:59:59.000Z

195

Earth-abundant semiconductors for photovoltaic applications ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

196

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and chemistry foundations to advance the state-of-the-art compound semiconductor optoelectronic materials and devices. Our approach is based on a focused effort including...

197

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

198

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

199

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor  

E-Print Network [OSTI]

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor Manufacturing perhaps. In this talk, we describe our efforts in developing a new class of wireless sensors for use in semiconductor manufacturing. These sensors are fully self-contained with on board power, communications

Akhmedov, Azer

200

Visitors Far and Wide  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 4 Visitors Far and Wide From left: Minister Danilov-Daniljan, Evan Mills (Assistant Director, Center for Building Science), Victoria Mats (interpreter and Soviet energy analyst), and Len Grossman (PG&E Energy Center) tour the PG&E Energy Center in San Francisco. The Russian Minister of Ecology and Natural Resources, Victor I. Danilov-Daniljan, spent three days in California as the Center's guest. The Minister presented information on current Soviet energy and environmental dilemmas and participated in a day-long roundtable discussion with representatives of major utilities, manufacturers of energy-efficient technologies, energy regulators, nongovernmental organizations, and Center scientists. Julian Aizenberg, one of the former Soviet Union's (FSU) foremost lighting

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Island Wide Management Corporation  

Office of Legacy Management (LM)

9 1986 9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have been identified by L. I. Trinin of Glick Construction Company as the representatives of the owners of the property that was formerly the site of the Sylvania-Corning Nuclear Corporation in Bayside, New York. The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and/or the Atomic Energy Commission in the early years of nuclear energy development to determine whether they need remedial action and whether the Department has authority to perform such action. As you may know, the former Sylvania-Corning Corporation Bayside site was identified as one such site.

202

Acoustoelectric Interactions in Piezoelectric Semiconductors  

Science Journals Connector (OSTI)

Piezoelectric semiconductors such as cadmium sulfide exhibit a strong coupling between conduction electrons that are present in the substance and acoustic waves that are propagated along certain directions in the material. This energy exchange mechanism is highly nonlinear, and thus the simultaneous introduction of several collinear acoustic waves into the substance generates new signals at the conbination (sum and difference) frequencies. A theoretical explanation of this interaction mechanism, based on consideration of the nonlinear cross term present in the current-density equation, has been developed, and the validity of this method of analysis has been tested and qualitatively confirmed through experimentation.

R. Mauro and W. C. Wang

1970-01-15T23:59:59.000Z

203

Optic probe for semiconductor characterization  

DOE Patents [OSTI]

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

2008-09-02T23:59:59.000Z

204

Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response  

SciTech Connect (OSTI)

In this study, the synthesis of p-type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O{sub 2} gas ambient at room temperature, followed by postdeposition annealing at 500 C in air for 2 h. The bandgap reduction and p-type conductivity are caused by the incorporation of Cu. The tuning of carrier concentration is realized by varying the Ga concentration. The carrier concentration tuning does not significantly change the bandgap and crystallinity. However, it can optimize the carrier concentration to significantly enhance the photoelectrochemical response for bandgap-reduced p-type ZnO thin films.

Shet, S.; Ahn, K.-S.; Yan, Y.; Deutsch T.; Chrustowski, K. M.; Turner, J.; Al-Jassim, M.; Nuggehalli, R.

2008-01-01T23:59:59.000Z

205

ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010  

SciTech Connect (OSTI)

This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

Woods, L.

2011-04-01T23:59:59.000Z

206

Charge-carrier transport in amorphous organic semiconductors  

E-Print Network [OSTI]

Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

Limketkai, Benjie, 1982-

2008-01-01T23:59:59.000Z

207

Comments on the National Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

The SIA National Technology Roadmap for Semiconductors (NTRS) [1] represents ... in defining a unified description of the semiconductor technology requirements for ensuring advancements in the performance ... an ...

James F. Freedman

1996-01-01T23:59:59.000Z

208

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

209

Engineering Density of States of Earth Abundant Semiconductors...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced...

210

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00...

211

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

212

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

213

e! Science News Semiconductor manufacturing technique holds  

E-Print Network [OSTI]

arsenide chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cellse! Science News Semiconductor manufacturing technique holds promise for solar energy Published semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got

Rogers, John A.

214

Semiconductor heterojunction band offsets and charge neutrality  

E-Print Network [OSTI]

on semi- conductors A and B like Figure 3. 1, and commutativity of semiconductors A and B, i. e. , DEs(A ? B) = DE?(B ? A). (3. 33) We predict the charge neutrality levels &b, 4is and 4i, might align in semiconductors A, B and C as shown in Figure 3...

Lee, Chomsik

2012-06-07T23:59:59.000Z

215

the World Wide Web  

Office of Scientific and Technical Information (OSTI)

technical report has been made technical report has been made electronically available on the World Wide Web through a contribution from Walter L. Warnick In honor of Enrico Fermi Leader of the first nuclear reactor, Nobel Prize winner, and visionary technologist Dr. Warnick is delighted to be the first sponsor for posting a Department of Energy technical report and making it broadly available Office of Scientific and Technical Information Office of Science U.S. Department of Energy September 2008 osti.gov U N I T E D S T A T E S A T O M I C E N E R G Y C O M M I S S I O N AECD-3269 EXPERIMENTAL PRODUCTION OF A DNERGENT CHAIN REACTION BY E. Fermi January 4, 1952 [TIS Issuance ate] [chicago University] - T e c h n i c a l I n f o r m a t i o n S e r v i c e , O a k Ridge, T e n n e s s e e r ABSTRACTS Description of the construction and operation of the chain

216

Energy Management in Semiconductor Cleanrooms  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

217

Boron doping a semiconductor particle  

DOE Patents [OSTI]

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

218

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

219

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

220

Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008  

SciTech Connect (OSTI)

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang and Nancy Ryan Gray

2009-09-16T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

AgBiS2 Semiconductor-Sensitized Solar Cells  

Science Journals Connector (OSTI)

AgBiS2 Semiconductor-Sensitized Solar Cells ... We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. ... Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. ...

Pen-Chi Huang; Wei-Chih Yang; Ming-Way Lee

2013-08-16T23:59:59.000Z

222

Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel  

E-Print Network [OSTI]

- cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

Jüngel, Ansgar

223

ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst  

E-Print Network [OSTI]

Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

Massachusetts at Amherst, University of

224

Structure, Dynamics, and Power Conversion Efficiency Correlations in a New Low Bandgap Polymer: PCBM Solar Cell  

Science Journals Connector (OSTI)

Since their discovery about 15 years ago, bulk heterojunction (BHJ) organic photovoltaic (OPV) devices made from semiconducting polymers have shown promise for future commercialization due to their low cost, ease of fabrication, and small environmental impact relative to silicon and heavy metal based semiconductor solar cells. ... (1-3) To achieve a high power conversion efficiency (PCE) in solar cells based on BHJ OPV materials, the semiconducting polymer composites must be efficient in light harvesting, exciton splitting, charge carrier generation, and transport. ... The white light continuum probe pulses were generated by focusing a few microjoules of the Ti:sapphire amplifier output onto a sapphire disk. ...

Jianchang Guo; Yongye Liang; Jodi Szarko; Byeongdu Lee; Hae Jung Son; Brian S. Rolczynski; Luping Yu; Lin X. Chen

2009-12-28T23:59:59.000Z

225

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance  

DOE Patents [OSTI]

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

2011-08-23T23:59:59.000Z

226

X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment  

SciTech Connect (OSTI)

In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.

Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC

2012-06-11T23:59:59.000Z

227

SPECTROSCOPIE DE DEFAUTS -LUMINESCENCE I. THE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS  

E-Print Network [OSTI]

'impuretes donneurs, accepteurs et pieges isoelectroniques,et de leur extension a I'identification d'espkces chimiques of impurity, donors, acceptors and isoelectronic traps, and their extension to the identification of chemical junctions with quite heavy doping to provide the desired high bulk conduc- tivity, certainly in the 10'' cm

Boyer, Edmond

228

Defects in wide band gap semiconductors: magneto-optical double resonance studies  

Science Journals Connector (OSTI)

Recent results obtained in the investigation of shallow donors in GaN with optical detection of electron paramagnetic resonance via the so-called yellow luminescence are reviewed as well as recent results on the silicon vacancy in SiC using optical detection of electron paramagnetic resonance via the magnetic circular dichroism of the absorption. The power of these double resonance methods is illustrated. The possibility of electrical detection of electron paramagnetic resonance in the electrical conductivity is also briefly discussed as future development.

Johann-Martin Spaeth

2004-01-01T23:59:59.000Z

229

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

230

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

231

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

232

Narrow band gap amorphous silicon semiconductors  

DOE Patents [OSTI]

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

233

ITRS: The International Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

In a move singular for the world’s industry, the semiconductor industry established a quantitative strategy for its progress with the establishment of the ITRS. In its 17th year, it has been extended in 2009 t...

Bernd Hoefflinger

2012-01-01T23:59:59.000Z

234

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents [OSTI]

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

235

Gaining creative control over semiconductor nanowires  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

236

Optical temperature indicator using thermochromic semiconductors  

DOE Patents [OSTI]

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

237

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network [OSTI]

in International Technology Roadmap for Semiconductors 2007in International Technology Roadmap for Semiconductors 2007The 2007 International Technology Roadmap for Semiconductors

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

238

Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination  

SciTech Connect (OSTI)

With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100?nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S{sup +}, S{sup 0}, and S{sub 2}{sup 0}. The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect.

Guenther, Kay-Michael, E-mail: kay-michael.guenther@efzn.de [Clausthal University of Technology, EFZN, Am Stollen 19B, 38640 Goslar (Germany); Gimpel, Thomas; Ruibys, Augustinas; Kontermann, Stefan [Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar (Germany); Tomm, Jens W. [Max Born Institut, Max-Born-Straße 2A, 12489 Berlin (Germany); Winter, Stefan [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Schade, Wolfgang [Clausthal University of Technology, EFZN, Am Stollen 19B, 38640 Goslar (Germany); Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar (Germany)

2014-01-27T23:59:59.000Z

239

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

240

Scanning Hall probe microscopy of a diluted magnetic semiconductor  

SciTech Connect (OSTI)

We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

Kweon, Seongsoo [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Samarth, Nitin [Physics Department, Penn State University, University Park, Pennsylvania 16802 (United States); Lozanne, Alex de [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2009-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

SciTech Connect (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for wide-scale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional (1D) structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.

Dasgupta, Neil; Yang, Peidong

2013-01-23T23:59:59.000Z

242

Magnonic band structure, complete bandgap, and collective spin wave excitation in nanoscale two-dimensional magnonic crystals  

SciTech Connect (OSTI)

We present the observation of a complete bandgap and collective spin wave excitation in two-dimensional magnonic crystals comprised of arrays of nanoscale antidots and nanodots, respectively. Considering that the frequencies dealt with here fall in the microwave band, these findings can be used for the development of suitable magnonic metamaterials and spin wave based signal processing. We also present the application of a numerical procedure, to compute the dispersion relations of spin waves for any high symmetry direction in the first Brillouin zone. The results obtained from this procedure have been reproduced and verified by the well established plane wave method for an antidot lattice, when magnetization dynamics at antidot boundaries are pinned. The micromagnetic simulation based method can also be used to obtain iso–frequency contours of spin waves. Iso–frequency contours are analogous of the Fermi surfaces and hence, they have the potential to radicalize our understanding of spin wave dynamics. The physical origin of bands, partial and full magnonic bandgaps have been explained by plotting the spatial distribution of spin wave energy spectral density. Although, unfettered by rigid assumptions and approximations, which afflict most analytical methods used in the study of spin wave dynamics, micromagnetic simulations tend to be computationally demanding. Thus, the observation of collective spin wave excitation in the case of nanodot arrays, which can obviate the need to perform simulations, may also prove to be valuable.

Kumar, D.; Barman, A., E-mail: abarman@bose.res.in [Thematic Unit of Excellence on Nanodevice Technology, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 098 (India); K?os, J. W.; Krawczyk, M. [Faculty of Physics, Adam Mickiewicz University in Poznan, Umultowska 85, Pozna? 61-614 (Poland)

2014-01-28T23:59:59.000Z

243

Direct thermal to electrical energy conversion using very low bandgap TPV cells in a gas-fired furnace system  

Science Journals Connector (OSTI)

Abstract In this paper, electricity generation using very low bandgap InGaAsSb thermophotovoltaic (TPV) cells whose bandgap is 0.53 eV was investigated in a gas-fired furnace system where thermal radiation was emitted from a metal alloy emitter. The electric output of the InGaAsSb TPV cells was characterized under various operating conditions. The cell short circuit density was measured to be 3.01 A/cm2 at an emitter temperature of 1197 °C. At this emitter temperature, an electric power density of 0.65 W/cm2 was produced by the TPV cells. Experimental results show that direct thermal to electrical energy conversion was achieved in a gas-fired heating furnace system. Such a system could be employed to form a micro-combined heat and power (micro-CHP) process where exhaust heat is utilized for home heating needs. The TPV integrated energy system provides an effective means for primary energy savings.

K. Qiu; A.C.S. Hayden

2014-01-01T23:59:59.000Z

244

962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid  

E-Print Network [OSTI]

962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid) are essential to realizing efficiency gains for state-of- the-art multijunction photovoltaic devices approach. Index Terms--Biomimetics, optical films, photovoltaic cells, III­V semiconductor materials. I

Bowers, John

245

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

246

Two-Photon Emission from Semiconductors  

E-Print Network [OSTI]

We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

Alex Hayat; Pavel Ginzburg; Meir Orenstein

2007-10-25T23:59:59.000Z

247

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09T23:59:59.000Z

248

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

249

Techniques for increasing output power from mode-locked semiconductor lasers  

SciTech Connect (OSTI)

Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

Mar, A.; Vawter, G.A.

1996-02-01T23:59:59.000Z

250

ROSAT wide field camera mirrors  

Science Journals Connector (OSTI)

The ROSAT wide field camera (WFC) is an XUV telescope operating in the 12–250-eV energy band. The mirror system utilizes Wolter-Schwarzschild type I (WS I) grazing incidence optics...

Willingale, R

1988-01-01T23:59:59.000Z

251

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

252

A New Cleanroom for a Next-Generation Semiconductor Research...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

253

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network [OSTI]

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

254

Silicon Carbide Power Semiconductor Devices in the Cleanroom...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Carbide Power Semiconductor Devices in the Cleanroom Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum,...

255

DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION  

E-Print Network [OSTI]

1 DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION SULEYMAN KARABUK semiconductor manufacturer: marketing managers reserve capacity from manufacturing based on product demands, while attempting to maximize profit; manufacturing managers allocate capacity to competing marketing

Wu, David

256

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network [OSTI]

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

257

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

258

Method Of Transferring A Thin Crystalline Semiconductor Layer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

259

Radioactive Waste Management Complex Wide Review | Department...  

Office of Environmental Management (EM)

Radioactive Waste Management Complex Wide Review Radioactive Waste Management Complex Wide Review The main goal of this complex-wide review was to obtain feedback from DOE sites...

260

Semiconductor nanowires DOI: 10.1002/smll.200500094  

E-Print Network [OSTI]

of a semiconductor Si nanowire, synthesized via the VLS pro- cess, into metallic nickel silicide through parameters. Anisotropic growth of a metal onto a semiconductor nanowire (or a semicon- ductor on a metal approach to prepare metal/semiconductor nano- wire heterostructures by transforming specific sections

Rogers, John A.

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

262

Visible light surface emitting semiconductor laser  

DOE Patents [OSTI]

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Olbright, Gregory R. (Boulder, CO); Jewell, Jack L. (Bridgewater, NJ)

1993-01-01T23:59:59.000Z

263

High-Frequency Conductivity of Degenerate Semiconductors  

Science Journals Connector (OSTI)

The problem of high-frequency conductivity of a degenerate semiconductor is investigated by a kinetic description. The finite duration of encounters is taken into account in a self-consistent fashion which properly includes collective effects. This treatment is an extension for quantum plasmas of the Dawson-Oberman method given for classical plasmas.

Amiram Ron and Narkis Tzoar

1963-09-01T23:59:59.000Z

264

Semiconductor Nanowire Optical Antenna Solar Absorbers  

E-Print Network [OSTI]

technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach to exhibit a strongly angle-dependent optical response and the resulting solar cells require bulky solar

Fan, Shanhui

265

Semiconductor detectors with proximity signal readout  

SciTech Connect (OSTI)

Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

2014-01-30T23:59:59.000Z

266

Organic conductive films for semiconductor electrodes  

DOE Patents [OSTI]

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, A.J.

1984-01-01T23:59:59.000Z

267

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/Å2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

268

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network [OSTI]

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

269

Optical temperature sensor using thermochromic semiconductors  

DOE Patents [OSTI]

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

270

High resolution scintillation detector with semiconductor readout  

DOE Patents [OSTI]

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

271

World Wide Web Information Servers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

World Wide Web Information Servers World Wide Web Information Servers Lawrence Berkeley Laboratory recently announced a gopher and World Wide Web site. To get to the web site, telnet to www.lbl.gov, login: www. Access is provided to LBL's gopher, library catalog, and publication list. The Center is funding the implementation of a WWW network node for on-line access to publications, databases, and documents full of hypermedia links to other documents or information systems from the Energy & Environment Division. Full implementation is expected by May 1994, and will include access to a variety of information from all the research programs and centers. The technology transfer project calls for this newsletter to be published on WWW using the Mosaic interface under development at the National Center

272

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics  

E-Print Network [OSTI]

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to bia...

Sukhdeo, David S; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2014-01-01T23:59:59.000Z

273

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

0001 0001 Transport and Kinetic Processes in GaN Epitaxial Lateral Overgrowth M. E. Coltrin and C. C. Mitchell Motivation-GaN is a wide band gap semi- conductor with a broad range of potential appli- cations, e.g., high-temperature electronics, op- telectronics, chemical or biological sensors. GaN thin films usually have a high defect den- sity, leading to poor performance. Epitaxial Lat- eral Overgrowth (ELO) has been shown to greatly reduce defect densities, often by factors of 100 or more. We are conducting fundamental studies of GaN growth kinetics during ELO. Accomplishment-In ELO, a mask pattern of dielectric material is deposited on top of a GaN buffer layer. Further growth of GaN occurs se- lectively on exposed areas of the underlying buffer layer, and not on the dielectric material.

274

Wide field of view telescope  

DOE Patents [OSTI]

A wide field of view telescope having two concave and two convex reflective surfaces, each with an aspheric surface contour, has a flat focal plane array. Each of the primary, secondary, tertiary, and quaternary reflective surfaces are rotationally symmetric about the optical axis. The combination of the reflective surfaces results in a wide field of view in the range of approximately 3.8.degree. to approximately 6.5.degree.. The length of the telescope along the optical axis is approximately equal to or less than the diameter of the largest of the reflective surfaces.

Ackermann, Mark R. (Albuquerque, NM); McGraw, John T. (Placitas, NM); Zimmer, Peter C. (Albuquerque, NM)

2008-01-15T23:59:59.000Z

275

Band-gap nonlinear optical generation: The structure of internal optical field and the structural light focusing  

SciTech Connect (OSTI)

A novel approach for the enhancement of nonlinear optical effects inside globular photonic crystals (PCs) is proposed and systematically studied via numerical simulations. The enhanced optical harmonic generation is associated with two- and three-dimensional PC pumping with the wavelength corresponding to different PC band-gaps. The interactions between light and the PC are numerically simulated using the finite-difference time-domain technique for solving the Maxwell's equations. Both empty and infiltrated two-dimensional PC structures are considered. A significant enhancement of harmonic generation is predicted owing to the highly efficient PC pumping based on the structural light focusing effect inside the PC structure. It is shown that a highly efficient harmonic generation could be attained for both the empty and infiltrated two- and three-dimensional PCs. We are demonstrating the ability for two times enhancement of the parametric decay efficiency, one order enhancement of the second harmonic generation, and two order enhancement of the third harmonic generation in PC structures in comparison to the nonlinear generations in appropriate homogenous media. Obviously, the nonlinear processes should be allowed by the molecular symmetry. The criteria of the nonlinear process efficiency are specified and calculated as a function of pumping wavelength position towards the PC globule diameter. Obtained criterion curves exhibit oscillating characteristics, which indicates that the highly efficient generation corresponds to the various PC band-gap pumping. The highest efficiency of nonlinear conversions could be reached for PC pumping with femtosecond optical pulses; thus, the local peak intensity would be maximized. Possible applications of the observed phenomenon are also discussed.

Zaytsev, Kirill I., E-mail: kirzay@gmail.com; Katyba, Gleb M.; Yakovlev, Egor V.; Yurchenko, Stanislav O., E-mail: st.yurchenko@mail.ru [Bauman Moscow State Technical University, 2nd Baumanskaya str. 5, Moscow 105005 (Russian Federation); Gorelik, Vladimir S. [P. N. Lebedev Physics Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, Moscow 119991 (Russian Federation)

2014-06-07T23:59:59.000Z

276

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

277

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

278

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

279

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

280

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

282

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism  

SciTech Connect (OSTI)

The electronic and magnetic properties of graphene nanoflakes (GNFs) can be tuned by patterned adsorption of hydrogen. Controlling the H coverage from bare GNFs to half hydrogenated and then to fully hydrogenated GNFs, the transformation of small-gap semiconductor {yields} half-metal {yields} wide-gap semiconductor occurs, accompanied by a magnetic {yields} magnetic {yields} nonmagnetic transfer and a nonmagnetic {yields} magnetic {yields} nonmagnetic transfer for triangular and hexagonal nanoflakes, respectively. The half hydrogenated GNFs, associated with strong spin polarization around the Fermi level, exhibit the unexpected large spin moment that is scaled squarely with the size of flakes. The induced spin magnetizations of these nanoflakes align parallel and lead to a substantial collective character, enabling the half hydrogenated GNFs to be spin-filtering flakes. These hydrogenation-dependent behaviors are then used to realize an attractive approach to engineer the transport properties, which provides a new route to facilitate the design of tunable spin devices.

Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Sun, Xin; Zu, Xiaotao; Gao, Fei

2012-03-08T23:59:59.000Z

283

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell. Annual status report, 31 May 1994-30 May 1995  

SciTech Connect (OSTI)

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique.

Alfano, R.R.; Wang, W.B.; Mohaidat, J.M.; Cavicchia, M.A.; Raisky, O.Y.

1995-05-01T23:59:59.000Z

284

Semiconductor P-I-N detector  

DOE Patents [OSTI]

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

285

Method of transferring strained semiconductor structure  

DOE Patents [OSTI]

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Nastasi, Michael A. (Santa Fe, NM); Shao, Lin (College Station, TX)

2009-12-29T23:59:59.000Z

286

"Magnetically dead" surface layers on ferromagnetic semiconductors  

Science Journals Connector (OSTI)

We perform an exact model calculation for the conduction-band spin structure of ferromagnetic semiconductors. The purpose of this illustrative quasiatomic theory (which is an abstraction of our earlier general theory) is to demonstrate that the case T=0 (i.e., ferromagnetic saturation) exhibits vanishingly small spectral weights of certain quasiparticle or scattering states which, however, become manifest for T>0, and determine the electron-spin polarization. Hence T=0 results cannot be generalized to nonzero temperatures and should not be used to prove or disprove the existence of "magnetically dead" surface layers on ferromagnetic semiconductors. The existence of such dead layers has frequently been postulated to explain the electron-spin polarization in photoemission and field-emission experiments.

W. Nolting and B. Reihl

1983-10-01T23:59:59.000Z

287

Optical cavity furnace for semiconductor wafer processing  

DOE Patents [OSTI]

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

288

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

289

A Markovian analysis of semiconductor manufacturing processes  

E-Print Network [OSTI]

) Karan L. Watson (Member) Martin A. Wortman (Member) ep Sastri (Member) o W. Howze (Head of Department) December 1991 ABSTRACT A Markovian Analysis of Semiconductor Manufacturing Processes. (December 1991) Kent Eugene Schultz, B. S. , Iowa... grateful to Dr. Martin Wortman, for his pa- tience and endless stream of examples to help me understand stochastic processes. I would also like to thank Dr. Tep Sastri for his patience and for always having a refer- ence available when I needed it...

Schultz, Kent Eugene

2012-06-07T23:59:59.000Z

290

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network [OSTI]

ELECTRICAL USAGE CHARACTERIZATION OF SEMICONDUCTOR PROCESSING TOOLS Scott R. Hinson Associate Engineer Radian Electronic Systems 15705 Long Vista Drive Austin, TX 78751 Abstract This paper presents the basic concepts in performing... be completed using as much detail as possible. The most often cited reason for aUditing process tools is the large discrepancy between the facilities requirements listed on the tool nameplate and the actual measured usage. I have measured systems...

Hinson, S. R.

291

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

292

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

293

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

294

Preparation and characterization of a novel hybrid magnetic semiconductor containing rare, one-dimensional mixed-iodide/chloride anion of lead(II)  

SciTech Connect (OSTI)

A new hybrid inorganic-organic magnetic semiconductor [Ni(bipy){sub 3}Pb{sub 2}I{sub 4.84}Cl{sub 1.16}.DMF]{sub n} (bipy=2,2'-bipyridine) containing novel one-dimensional mixed-halide anion of lead(II) was synthesized by reactions of PbI{sub 2}, NaI, NiCl{sub 2} and bipy in DMF solution, and structurally characterized by single-crystal X-ray diffraction. It crystallizes in the space group C2/c with a=29.260(8) A, b=15.602(4) A, c=23.695(6) A, {beta}=126.815({sup o}), Z=8, V=8660(4) A{sup 3} and consists of a magnetic cation [Ni(bipy){sub 3}]{sup 2+} in addition to one-dimensional mixed-halide anion, which is built up of face-sharing [PbX{sub 6}] octahedra. Of the seven crystallographically independent halide sites in this anion, one and five are occupied by Cl and I, respectively, the remaining one has mixed-iodide and -chloride occupancy. The title yellow compound has an optical bandgap of 2.59 eV, and the variable-temperature magnetic susceptibility measurement indicates paramagnetic behavior. - Graphical abstract: Based upon magnetic metal-organic complex as template, a novel one-dimensional haloplumbate containing mixed-halide anion has been successfully synthesized. Its structural characteristics, optical bandgap, magnetic and thermal properties are reported.

Fan Leqing [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, Fujian 362021 (China)], E-mail: lqfan@hqu.edu.cn; Wu Jihuai [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, Fujian 362021 (China)], E-mail: jhwu@hqu.edu.cn; Huang Yunfang [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, Fujian 362021 (China)

2007-12-15T23:59:59.000Z

295

Method and system for powering and cooling semiconductor lasers  

DOE Patents [OSTI]

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Telford, Steven J; Ladran, Anthony S

2014-02-25T23:59:59.000Z

296

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents [OSTI]

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

297

Hanford Site Wide Programs - Hanford Site  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Decrease Font Size Hanford Site Wide Programs Hanford Safety Hanford Site Wide Programs Hanford Fire Department Health & Safety Exposition Hanford Traffic Safety Hanford...

298

X-ray microscopy: An emerging technique for semiconductor microstructure characterization  

SciTech Connect (OSTI)

The advent of third generation synchrotron radiation x-ray sources, such as the Advanced Light Source (ALS) at Berkeley have enabled the practical realization of a wide range of new techniques in which mature chemical or structural probes such as x-ray photoelectron spectroscopy (XPS) and x-ray diffraction are used in conjunction with microfocused x-ray beams. In this paper the characteristics of some of these new microscopes are described, particularly in reference to their applicability to the characterization of semiconductor microstructures.

Padmore, H.A.

1998-05-01T23:59:59.000Z

299

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

300

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Broader source: Energy.gov (indexed) [DOE]

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Semiconductor research capabilities at the Lawrence Berkeley Laboratory  

SciTech Connect (OSTI)

This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

Not Available

1987-02-01T23:59:59.000Z

302

Method for depositing high-quality microcrystalline semiconductor materials  

DOE Patents [OSTI]

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

303

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

Science Journals Connector (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for...

Neil P. Dasgupta; Peidong Yang

2014-06-01T23:59:59.000Z

304

Method of transferring a thin crystalline semiconductor layer  

DOE Patents [OSTI]

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nastasi, Michael A. (Sante Fe, NM); Shao, Lin (Los Alamos, NM); Theodore, N. David (Mesa, AZ)

2006-12-26T23:59:59.000Z

305

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network [OSTI]

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

306

Peltier cooling stage utilizing a superconductor-semiconductor junction  

SciTech Connect (OSTI)

This paper describes a Peltier cooling stack. It comprises: a first electrode; a superconducting layer electrically coupled to the first electrode; a semiconducting layer electrically coupled to the superconducting layer; and a second superconducting layer electrically coupled to the semiconductor layer; and a second electrode electrically coupled to the second superconducting layer, electrons flowing under an applied voltage from the first electrode through the first superconducting layer, semiconductor layer, second superconducting layer and second electrode, the electrical junction between the first superconducting layer and semiconductor providing Peltier cooling while the electrical junction between the semiconductor layer and the second superconducting layer providing Peltier heating, whereby a cryogenic Peltier cooling stack is provided.

Skertic, M.M.

1991-04-09T23:59:59.000Z

307

Holey Germanium - New Routes to Ordered Nanoporous Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

currently exploring a variety of applications for these materials, including nanoscale solar cells and adsorption based chemical sensors. Because the semiconductor surface is...

308

Coherence length tunable semiconductor laser with optical feedback  

Science Journals Connector (OSTI)

We report the experimental results to continuously tune the coherence length of a semiconductor laser using an optical feedback scheme. The coherence length can be controlled by...

Wang, Yuncai; Kong, Lingqin; Wang, Anbang; Fan, Linlin

2009-01-01T23:59:59.000Z

309

Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Organic Semiconductor Chemistry December 13, 2012 at 3pm36-428 Seth Marder Department of ChemistryBiochemistry, Director, Center for Organic Photonics and Electronics, Georgia...

310

Exchange Coupling in the Ferromagnetic Semiconductor GaMnAs.  

E-Print Network [OSTI]

?? The study of ferromagnetic semiconductors (FMS) continues to be of great interest because of their potential for spintronic devices. While there has been much… (more)

Leiner, Jonathan Carl

2012-01-01T23:59:59.000Z

311

Exchange interaction studies in magnetic semiconductors by neutron scattering.  

E-Print Network [OSTI]

??Theories predict that making a dilute magnetic semiconductor strongly p -type would allow it to remain ferromagnetic at room temperature. This is of intrest as… (more)

Wiren, Zachary Quincy

2008-01-01T23:59:59.000Z

312

Si-C multilayer quasi crystals preparation by DC magnetron sputtering  

Science Journals Connector (OSTI)

Silicon carbide (SiC) is becoming one of the most important electronic materials in recent years. Single crystalline SiC is a wide-bandgap semiconductor, which finds a wide range of applications in high temperature, power consuming, and fast-acting electron ... Keywords: C-V measurement, Magnetron sputtering, Si-C multilayer

G. Golan; A. Axelevitch; B. Gorenstein

2006-12-01T23:59:59.000Z

313

Tuning the Morphology and Performance of Low Bandgap Polymer: Fullerene Heterojunctions via Solvent Annealing in Selective Solvents  

SciTech Connect (OSTI)

Low bandgap polymer (LBG):fullerene mixtures are some of the most promising organic photovoltaic active layers. Unfortunately, there are no post-deposition treatments available to rationally improve the morphology and performance of as-cast LBG:fullerene OPV active layers, where thermal annealing usually fails. Therefore, there is a glaring need to develop postdeposition methods to guide the morphology of LBG:fullerene bulk heterojunctions towards targeted structures and performance. In this paper, the structural evolution of PCPDTBT:PCBM mixtures with solvent annealing (SA) is examined, focusing on the effect of solvent quality of the fullerene and polymer in the annealing vapor on morphological evolution and device performance. The results indicate that exposure of this active layer to the solvent vapor controls the ordering of PCPDTBT and PCBM phase separation very effectively, presumably by inducing component mobility as the solvent plasticizes the mixture. These results also unexpectedly indicate that solvent annealing in a selective solvent provides a method to invert the morphology of the LBG:fullerene mixture from a polymer aggregate dispersed in a polymer:fullerene matrix to fullerene aggregates dispersed in a polymer:fullerene matrix. The judicious choice of solvent vapor, therefore, provides a unique method to exquisitely control and optimize the morphology of LBG conjugated polymer/fullerene mixtures.

Chen, Huipeng [ORNL; Hsiao, Yu-Che [ORNL; Hu, Bin [ORNL; Dadmun, Mark D [ORNL

2014-01-01T23:59:59.000Z

314

Semiconductor bridge: A plasma generator for the ignition of explosives  

SciTech Connect (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics, propellants, and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ..mu..s), low-energy pulse (less than 3.5 mJ), the SCB produces a hot plasma that ignites explosives. The SCB, a heavily n-doped silicon film, typically 100 ..mu..m long by 380 ..mu..m wide by 2 ..mu..m thick, is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one-tenth the input energy of metal bridgewires. In spite of the low energies for ignition, SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process, plasma formation, optical spectra from the discharge, heat transfer mechanisms from the SCB to the explosive powders, and SCB device applications.

Benson, D.A.; Larsen, M.E.; Renlund, A.M.; Trott, W.M.; Bickes R.W. Jr.

1987-09-01T23:59:59.000Z

315

Semiconductor bridge: A plasma generator for the ignition of explosives  

Science Journals Connector (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics propellants and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ?s) low?energy pulse (less than 3.5 mJ) the SCB produces a hot plasma that ignites explosives. The SCB a heavily n?doped silicon film typically 100 ?m long by 380 ?m wide by 2 ?m thick is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one?tenth the input energy of metal bridgewires. In spite of the low energies for ignition SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process plasma formation optical spectra from the discharge heat transfer mechanisms from the SCB to the explosive powders and SCB device applications.

D. A. Benson; M. E. Larsen; A. M. Renlund; W. M. Trott; R. W. Bickes Jr.

1987-01-01T23:59:59.000Z

316

Reusing rinse wastewater at a semiconductor plant  

SciTech Connect (OSTI)

Two pilot rinse wastewater reuse projects were developed as part of a long-term water conservation program for a Motorola semiconductor manufacturing site in Phoenix, Ariz. The conceptual designs for the projects grew out of a detailed wastewater reuse study that characterized wastewater streams at their generation points. Both treatment techniques were specifically researched, bench-tested, and adapted to further water conservation efforts while ensuring 100 percent compliance with appropriate effluent regulations and industrial discharge permit conditions. Together, the pilot projects save the city of Phoenix approximately 45 mil gal (17 {times} 10{sup 4} m{sup 3}) of water annually.

Shah, A.R. [Motorola SCG, McDowell, MD (United States). Environmental, Safety, and Industrial Hygiene Dept.; Ploeser, J.H. [Phoenix Water Services Dept., AZ (United States). Water Conservation Office

1999-08-01T23:59:59.000Z

317

Transient Rayleigh scattering from single semiconductor nanowires  

SciTech Connect (OSTI)

Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-12-04T23:59:59.000Z

318

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

319

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

320

Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies  

E-Print Network [OSTI]

ITRa] International Technology Roadmap for Semiconductors,ITRb] International Technology Roadmap for Semiconductors,val- ues from ITRS technology roadmap [ITRb] and typical

Abou Ghaida, Rani

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

On a mathematical model for hot carrier injection in semiconductors  

E-Print Network [OSTI]

On a mathematical model for hot carrier injection in semiconductors Naoufel Ben Abdallah (1) Pierre of a semiconductor device heavily depends on the injection mechanism of carriers into the active regions through by the relation V bi = U th log N + N \\Gamma ; where U th = kBT=q is the thermal voltage and N + ; N \\Gamma

Schmeiser, Christian

322

Magnetically and electrically tunable semiconductor quantum waveguide inverter  

E-Print Network [OSTI]

Magnetically and electrically tunable semiconductor quantum waveguide inverter M. J. Gilbert,a) R implementations. We present an electrically tunable semiconductor quantum waveguide implementation of an inverter. On the other hand, if a ``0'' is present in the control bit, then the qubit is inverted. In a recent study

Gilbert, Matthew

323

Semiconductors 4-bit I2C LED dimmer  

E-Print Network [OSTI]

Philips Semiconductors PCA9533 4-bit I2C LED dimmer Product data sheet Supersedes data of 2003 Sep 19 2004 Oct 01 INTEGRATED CIRCUITS #12;Philips Semiconductors Product data sheet PCA95334-bit I2C LED dimmer 22004 Oct 01 FEATURES · 4 LED drivers (on, off, flashing at a programmable rate) · 2 selectable

Berns, Hans-Gerd

324

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network [OSTI]

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

325

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network [OSTI]

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

326

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*,  

E-Print Network [OSTI]

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*, and Peidong Yang* Department. Introduction: Role of Materials in Energy Conversion 527 2. Why Are Semiconductor Nanowires Special? 527 3 of Materials in Energy Conversion Between 2004 and 2030 the annual global consumption of energy is estimated

Wu, Zhigang

327

Photonic switching devices based on semiconductor nanostructures  

E-Print Network [OSTI]

Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analyzed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

Chao-Yuan Jin; Osamu Wada

2014-02-26T23:59:59.000Z

328

Coated semiconductor devices for neutron detection  

DOE Patents [OSTI]

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

329

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network [OSTI]

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-09-17T23:59:59.000Z

330

Monolithic heteroepitaxial integration of III-V semiconductor lasers on Si substrates  

E-Print Network [OSTI]

Monolithic optoelectronic integration on silicon-based integrated circuits has to date been limited to date by the large material differences between silicon (Si) and the direct-bandgap GaAs compounds from which optoelectronic ...

Groenert, Michael

2002-01-01T23:59:59.000Z

331

Control of coherence resonance in semiconductor superlattices  

E-Print Network [OSTI]

We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

Johanne Hizanidis; Eckehard Schoell

2008-09-01T23:59:59.000Z

332

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

333

Sub-femtosecond determination of transmission delay times for a dielectric mirror (photonic bandgap) as a function of angle of incidence  

E-Print Network [OSTI]

Using a two-photon interference technique, we measure the delay for single-photon wavepackets to be transmitted through a multilayer dielectric mirror, which functions as a ``photonic bandgap'' medium. By varying the angle of incidence, we are able to confirm the behavior predicted by the group delay (stationary phase approximation), including a variation of the delay time from superluminal to subluminal as the band edge is tuned towards to the wavelength of our photons. The agreement with theory is better than 0.5 femtoseconds (less than one quarter of an optical period) except at large angles of incidence. The source of the remaining discrepancy is not yet fully understood.

Aephraim M. Steinberg; Raymond Y. Chiao

1995-01-16T23:59:59.000Z

334

Large-area semiconductor detectors of beta radiation  

SciTech Connect (OSTI)

This paper describes silicon semiconductor detectors with a diameter of 90 mm with hole-type conduction. The detectors had been grown with the Czochralski technique and had a specific resistivity lambda - 12 omega /SUP ./ cm and a carrier lifetime tau = 50 usec. In the case of semiconductor detectors for counting, silicon grown from a melt has its advantages because the distribution of the specific resistivity in low-resistivity semiconductor crystals is more homogeneous than in high-resistivity crystals in both longitudinal and transverse direactions relative to the axis of crystal growth.

Azimov, S.A.; Baizakov, B.B.; Karpov, V.S.; Muminov, R.A.

1986-08-01T23:59:59.000Z

335

Varian Semiconductor Equipment Associates Inc VSEA | Open Energy  

Open Energy Info (EERE)

Varian Semiconductor Equipment Associates Inc VSEA Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name Varian Semiconductor Equipment Associates Inc (VSEA) Place Gloucester, Massachusetts Zip 1930 Sector Services Product Massachusetts-based, designs, manufactures, and services semiconductor processing equipment used in the fabrication of integrated circuits. Coordinates 37.413962°, -76.526305° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.413962,"lon":-76.526305,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

336

Ramgraber Semiconductor Equipment GmbH | Open Energy Information  

Open Energy Info (EERE)

Ramgraber Semiconductor Equipment GmbH Ramgraber Semiconductor Equipment GmbH Jump to: navigation, search Name Ramgraber Semiconductor Equipment GmbH Place Brunnthal, Germany Zip 85649 Sector Solar Product Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates 48.006898°, 11.684687° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.006898,"lon":11.684687,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

337

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

338

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

339

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

340

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Generating dispatching rules for semiconductor manufacturing to minimize weighted tardiness  

Science Journals Connector (OSTI)

Dispatching rules play an important role especially in semiconductor manufacturing scheduling, because these fabrication facilities are characterized by high complexity and dynamics. The process of developing and adapting dispatching rules is currently ...

Christoph Pickardt; Jürgen Branke; Torsten Hildebrandt; Jens Heger; Bernd Scholz-Reiter

2010-12-01T23:59:59.000Z

342

Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control  

Science Journals Connector (OSTI)

A dual line-of-sight CW lidar that measures both wind speed and direction is presented. The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared...

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

343

Review of the Semiconductor Industry and Technology Roadmap  

Science Journals Connector (OSTI)

The semiconductor industry operates in a constant state of deflation. It is vital to our survival and progress in this knowledge era. The industry is extremely competitive and requires ongoing technological advan...

Sameer Kumar; Nicole Krenner

2002-09-01T23:59:59.000Z

344

Translating semiconductor device physics into nanoparticle films for electronic applications  

E-Print Network [OSTI]

This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

Wanger, Darcy Deborah

2014-01-01T23:59:59.000Z

345

Improving reuse of semiconductor equipment through benchmarking, standardization, and automation  

E-Print Network [OSTI]

The 6D program at Intel® Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

Silber, Jacob B. (Jacob Bradley)

2006-01-01T23:59:59.000Z

346

Planar graphene-narrow-gap semiconductor-graphene heterostructure  

Science Journals Connector (OSTI)

A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ... paradox is absent when conical points of the graphene Brillouin zone are in the band gap...

P. V. Ratnikov; A. P. Silin

2008-11-01T23:59:59.000Z

347

Energy Conservation Through Water Usage Reduction in the Semiconductor Industry  

E-Print Network [OSTI]

ENERGY CONSERVATION THROUGH WATER USAGE REDUCTION IN THE SEMICONDUCTOR INDUSTRY Laura Mendicino Kathy McCormack Sarah Gibson Bob Patton Dana Lyon Jeff Covington Engineer Engineer ESrn Manager Engineer Engineer Engineer Motorola Austin, TX...

Mendicino, L.; McCormack, K.; Gibson, S.; Patton, B.; Lyon, D.; Covington, J.

348

Facts and Artifacts in the Blinking Statistics of Semiconductor Nanocrystals  

Science Journals Connector (OSTI)

Since its initial discovery just over a decade ago, blinking of semiconductor nanocrystals has typically been described in terms of probability distributions for durations of bright, or “on,” states and dark, or “off,” states. These distributions are ...

Catherine H. Crouch; Orion Sauter; Xiaohua Wu; Robert Purcell; Claudia Querner; Marija Drndic; Matthew Pelton

2010-04-05T23:59:59.000Z

349

Data sheet acquired from Harris Semiconductor Buffered Inputs  

E-Print Network [OSTI]

1 Data sheet acquired from Harris Semiconductor SCHS121D Features · Buffered Inputs · Typical. The suffixes 96 and R denote tape and reel. The suffix T denotes a small-quantity reel of 250. CAUTION

Kretchmar, R. Matthew

350

Data sheet acquired from Harris Semiconductor Four Operating Modes  

E-Print Network [OSTI]

1 Data sheet acquired from Harris Semiconductor SCHS164F Features · Four Operating Modes - Shift Ld PDIP NOTE: When ordering, use the entire part number. The suffixes 96 and R denote tape and reel

Kretchmar, R. Matthew

351

Semiconductor Aspects of Organic Bulk Heterojunction Solar Cells  

Science Journals Connector (OSTI)

During the last few years organic solar cells have been discussed as a promising alternative to inorganic semiconductors for renewable energy production. These organic photovoltaic devices offer the possibility o...

Christoph J. Brabec

2003-01-01T23:59:59.000Z

352

Ultrafast nonlinear optical properties of passive and active semiconductor devices  

E-Print Network [OSTI]

Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

Motamedi, Ali Reza

2011-01-01T23:59:59.000Z

353

Phenomenological band structure model of magnetic coupling in semiconductors  

E-Print Network [OSTI]

Phenomenological band structure model of magnetic coupling in semiconductors Gustavo M. Dalpian a,1­18]. Several models have been proposed to explain the phenomena, including the phenomenological Zener

Gong, Xingao

354

Enterprise-Wide Agreements | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Enterprise-Wide Enterprise-Wide Agreements Enterprise-Wide Agreements DOE's Office of the Chief Information Officer (OCIO) has designed the IT Acquisition: Enterprise-Wide Agreement (EWA) Program to develop and implement policies and procedures that support the identification, acquisition, oversight and compliance of enterprise licenses. EWAs are Department-wide acquisitions of widely used commercial software. The EWA Program has two core objectives to achieve the Program mission : Maximizing IT buying power and reducing total cost of ownership; Streamlining the IT total acquisition lifecycle. The EWA Program applies a centralized, cross-functional, strategic enterprise software solutions approach. The EWA Program leverages opportunities to create efficiencies and enhances the value of IT

355

Chemical vapor deposition of amorphous semiconductor films. Final subcontract report  

SciTech Connect (OSTI)

Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

Rocheleau, R.E.

1984-12-01T23:59:59.000Z

356

Theory of non-Markovian decay of a cascade atom in high-Q cavities and photonic band-gap materials  

E-Print Network [OSTI]

The dynamics of a three-level atom in a cascade configuration with both transitions coupled to a single structured reservoir of quantized field modes is treated using Laplace transform methods applied to the coupled amplitude equations. Results are also obtained from master equations by two different approaches, that is, involving either pseudomodes or quasimodes. Two different types of reservoir are considered, namely a high-Q cavity and a photonic band-gap system, in which the respective reservoir structure functions involve Lorentzians. Non-resonant transitions are included in the model. In all cases non-Markovian behaviour for the atomic system can be found, such as oscillatory decay for the high-Q cavity case and population trapping for the photonic band-gap case. In the master equation approaches, the atomic system is augmented by a small number of pseudomodes or quasimodes, which in the quasimode approach themselves undergo Markovian relaxation into a flat reservoir of continuum quasimodes. Results from these methods are found to be identical to those from the Laplace transform method including two-photon excitation of the reservoir with both emitting sequences. This shows that complicated non-Markovian decays of an atomic system into structured EM field reservoirs can be described by Markovian models for the atomic system coupled to a small number of pseudomodes or quasimodes.

B. M. Garraway; B. J. Dalton

2006-02-13T23:59:59.000Z

357

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents [OSTI]

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

358

DFAS Wide-Area Workflow Issues  

Broader source: Energy.gov [DOE]

Presentation covers the DFAS wide-area workflow issues and is given at the Spring 2011 Federal Utility Partnership Working Group (FUPWG) meeting.

359

Fabry-Perot tuning of the band-gap polarity in plasmonic crystals Jin E. Kihm,1 Y. C. Yoon,1 D. J. Park,1 Y. H. Ahn,1 C. Ropers,2 C. Lienau,2,3 J. Kim,4 Q. H. Park,5 and D. S. Kim1,  

E-Print Network [OSTI]

-resolved transmission spectra of nanoslit arrays in metal films demonstrate band-gap formation resulting from surface-gap flipping. Our results indicate an interesting route towards band-gap engineering in plasmonic crystals. DOI of electronic and photonic band gaps--i.e., energy regions with a vanishing density of states in crystal- line

Peinke, Joachim

360

Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon  

Science Journals Connector (OSTI)

The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. ... Because silicon is an indirect bandgap semiconductor, free-carrier absorption, and nonradiative recombination processes prevent any significant light emission. ...

Thomas Frost; Shafat Jahangir; Ethan Stark; Saniya Deshpande; Arnab Hazari; Chao Zhao; Boon S. Ooi; Pallab Bhattacharya

2014-06-27T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Congrs SFC-EuroChem Universit Henri  

E-Print Network [OSTI]

IN PHOTOELECTROCHEMICAL, ELECTROCHROMIC AND PHOTOCHROMIC DEVICES R. ARGAZZI, M. BIANCARDO, S. CARAMORI, C. A. BIGNOZZI of binding a molecular system to nanocrystalline wide band-gap semiconductors, of new types of electrochromic. Bignozzi. "Design of Molecular Dyes for Application in Photoelectro Electrochromic Devices based

362

Next-Generation Power Electronics: Reducing Energy Waste and Powering the Future  

Office of Energy Efficiency and Renewable Energy (EERE)

From unleashing more powerful and energy-efficient laptops, cell phones and motors, to shrinking utility-scale inverters from 8,000 pound substations to the size of a suitcase, wide bandgap semiconductors could be one of the keys to our clean energy future.

363

Study of Interfacial Charge-Transfer Complex on TiO2 Particles in Aqueous Suspension by Second-Harmonic Generation  

E-Print Network [OSTI]

/mol. 1. Introduction Titanium dioxide (TiO2) is a wide band-gap semiconductor having two common crystal, the adsorption isotherm of catechol on the colloidal TiO2 suspension was obtained and gave an excellent fit to the Langmuir adsorption model. From this, we infer the free energy of the adsorption to be G° ) -6.8 kcal

Eisenthal, Kenneth B.

364

Low-temperature Peltier heat of an itinerant electron in a ferromagnetic semiconductor  

SciTech Connect (OSTI)

The Peltier heat of a wide-band itinerant carrier in a ferromagnetic semiconductor has been calculated for temperatures below the Curie temperature. In this regime we treat the spin fluctuations within the spin-wave approximation. The coupling of the charge carrier to the local moments is via local intra-atomic (e.g., s-f or s-d) exchange. Taking the strength of the intra-atomic exchange interaction to be small compared with the carrier's electronic bandwidth, we treat the interaction between the carrier and the local moments perturbatively through second order. We use the perturbed energy to compute the free energy of the coupled electron-magnon system. From the carrier-induced change of the system's free energy we directly obtain the carrier's Peltier heat. The Peltier heat contains two terms of opposite sign which both increase in magnitude with increasing temperature. These two terms arise from the first- and second-order contributions to the energy of the coupled system. Except at very low temperatures, the first-order contribution dominates. Then the electron-magnon interaction provides a negative contribution to the Peltier heat of a ferromagnetic semiconductor. The magnitude of this contribution varies as T/sup 3/2/.

Liu, N.H.; Emin, D.

1985-08-15T23:59:59.000Z

365

RAMAN AND IR STUDY OF NARROW BANDGAP A-SIGE AND C-SIGE FILMS DEPOSITED USING DIFFERENT HYDROGEN DILUTION  

E-Print Network [OSTI]

chemical vapor deposition (PECVD) with a fixed germane to disilane ratio of 0.72 and a wide range], cathode deposition [2], and using disilane- germane mixture without H dilution [3] in PECVD process. A gas mixture of disilane, germane and hydrogen was used with a fixed germane to disilane ratio of 0

Deng, Xunming

366

Agency-Wide Screening | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Agency-Wide Screening Agency-Wide Screening Agency-Wide Screening October 16, 2013 - 4:36pm Addthis Federal agencies face energy-related requirements on new construction projects and major renovations. These Federal requirements range from reductions in fossil-fuel use to specifying the use of certain renewable energy technologies. As some agencies have already found out, not all sites or construction projects are created equal. Because many of the requirements are agency-wide, an effective and efficient way to meet these requirements is to consider and identify appropriate locations for these technologies across all agency land and building assets. FEMP can help Federal agencies conduct a renewable energy screening at all of its sites, or just at all of its upcoming construction project

367

West Wide Programmatic Environmental Impact Statement Record...  

Open Energy Info (EERE)

LibraryAdd to library Legal Document- OtherOther: West Wide Programmatic Environmental Impact Statement Record of Decision (BLM)Legal Published NA Year Signed or Took Effect...

368

Impact of Lattice Mismatch and Stoichiometry on the Structure and Bandgap of (Fe,Cr)2O3 Epitaxial Thin Films  

SciTech Connect (OSTI)

The structural properties of high-quality epitaxial (Fe1-xCrx)2O3 thin films are investigated across the composition range. Epitaxial films are deposited on a-Al2O3(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy. Corundum (Fe1-xCrx)2O3 supercells relaxed by density functional theory confirm that the non-linear behavior of the bulk lattice parameters originates in the magnetic structure of the alloy films. High-resolution x-ray diffraction reveals the degree of epitaxial strain relaxation in the films, with Cr-rich films remaining partially strained to the Al2O3 substrate. For intermediate compositions, a lattice expansion and non-Poisson-like tetragonal distortion are found. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal a columnar grain structure in the films, with uniform mixing of cations on the nanometer scale. Oxygen non-stoichiometry is quantified by non-Rutherford resonant elastic scattering measurements utilizing 3.04 MeV He+. Intermediate-composition films are found to be slightly over-stoichiometric, resulting in the observed lattice expansion. Cr-rich films, in contrast, appear to be slightly oxygen deficient. A model is proposed to explain these results based on the energetics of oxygen defect formation and rate of oxygen diffusion in the corundum lattice. Compressive biaxial strain is found to reduce the bandgap of epitaxial Cr2O3 relative to the bulk value. The relationships which are elucidated between epitaxial film structure and optical properties can be applied to bandgap optimization in the (Fe,Cr)2O3 system.

Kaspar, Tiffany C.; Chamberlin, Sara E.; Bowden, Mark E.; Colby, Robert J.; Shutthanandan, V.; Manandhar, Sandeep; Wang, Yong; Sushko, Petr; Chambers, Scott A.

2014-03-13T23:59:59.000Z

369

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

SciTech Connect (OSTI)

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

370

Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane  

E-Print Network [OSTI]

Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.

K. Usami; A. Naesby; T. Bagci; B. Melholt Nielsen; J. Liu; S. Stobbe; P. Lodahl; E. S. Polzik

2010-11-22T23:59:59.000Z

371

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor Manufacturing  

E-Print Network [OSTI]

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor of treating wastewater streams in the semiconductor manufacturing industry. Electrocoagulation involves wastewater is increasing greatly. The objective is that by using EC to treat wastewater streams, this water

Fay, Noah

372

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors  

Science Journals Connector (OSTI)

In this chapter, it is first described how the surface science and engineering of the III–V compound semiconductors are relevant to developing the semiconductor-based materials, including bismuth (Bi) containi...

Pekka Laukkanen; Marko Punkkinen

2013-01-01T23:59:59.000Z

373

Semiconductor wire array structures, and solar cells and photodetectors based on such structures  

DOE Patents [OSTI]

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19T23:59:59.000Z

374

E-Print Network 3.0 - active fabry-perot semiconductor Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics 45 The Laser DiodeThe Laser Diode Jason HillJason Hill Summary: to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

375

Thin film reactions on alloy semiconductor substrates  

SciTech Connect (OSTI)

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

376

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

SciTech Connect (OSTI)

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

377

Low temperature production of large-grain polycrystalline semiconductors  

DOE Patents [OSTI]

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

378

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network [OSTI]

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

379

POWER SEMICONDUCTORS—STATE OF ART AND FUTURE TRENDS  

Science Journals Connector (OSTI)

The importance of effective energy conversion control including power generation from renewable and environmentally clean energy sources increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency size weight and cost of power electronic systems.

Vitezslav Benda

2011-01-01T23:59:59.000Z

380

E-Print Network 3.0 - advanced semiconductor devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Northern Illinois University Collection: Engineering 39 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication  

DOE Patents [OSTI]

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Sopori, Bhushan

2014-05-27T23:59:59.000Z

382

Streamlining the supply chain information system of the semiconductor industry using multi-XML schema  

Science Journals Connector (OSTI)

This study develops a supply chain informational infrastructure that streamlines message exchange among partners in the semiconductor industry to enhance the performance of the semiconductor industry's supply chain system, from the upstream IC design ... Keywords: XML), e-commerce, electronic commerce, extensible markup language (, metadata 1, production information management, semiconductor industry supply chain

Ruey-Shun Chen; Kung-Yung Lu; Yen-Ming Chu

2004-05-01T23:59:59.000Z

383

A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search  

SciTech Connect (OSTI)

Conventional semiconductor material growth technique is costly and time-consuming. Here we developed a new method to growth semiconductor thin films using high through-put combinatorial technique. In this way, we have successfully fabricated tens of semiconductor libraries with high crystallinity and high product of {mu}{tau} for the purpose of radiation detection.

Ma, Z. X.; Hao, H. Y.; Xiao, P.; Oehlerking, L. J.; Liu, D. F.; Zhang, X. J.; Yu, K.-M.; Walukiewicz, W.; Mao, S. S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Yu, P. Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-12-23T23:59:59.000Z

384

Advanced semiconductor fabrication process control using dual filter exponentially weighted moving average  

Science Journals Connector (OSTI)

Semiconductor industry needs to meet high standards to ensure survival and success in the 21st century. Rising expectations from the customers are demanding the semiconductor industry to manufacture products with both accuracy and precision. To comply ... Keywords: Dual filter EWMA, EWMA, Process control, Run-to-run, Semiconductor fabrication process

Hyo-Heon Ko; Jihyun Kim; Sang-Hoon Park; Jun-Geol Baek; Sung-Shick Kim

2012-06-01T23:59:59.000Z

385

Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices  

SciTech Connect (OSTI)

We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. We present here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescence measurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

Webb, J. D.; Keyes, B. M.; Ahrenkiel, R. K.; Wanlass, M. W.; Ramanathan, K.; Gedvilas, L. M.; Olson, M. R.; Dippo, P.; Jones, K. M.

1999-07-12T23:59:59.000Z

386

Draft Site-Wide Environmental Impact Statement  

Broader source: Energy.gov (indexed) [DOE]

Site-Wide Environmental Impact Statement Site-Wide Environmental Impact Statement for the Y-12 National Security Complex October 2009 U.S. Department of Energy National Nuclear Security Administration Y-12 Site Office DOE/EIS-0387 COVER SHEET RESPONSIBLE AGENCY: United States (U.S.) Department of Energy (DOE), National Nuclear Security Administration (NNSA) TITLE: Draft Site-wide Environmental Impact Statement for the Y-12 National Security Complex (DOE/EIS-0387) (Draft Y-12 SWEIS) CONTACT: For further information on this SWEIS, For general information on the DOE contact: National Environmental Policy Act (NEPA) process, contact: Pam Gorman Carol Borgstrom, Director Y-12 SWEIS Document Manager Office of NEPA Policy and Compliance, GC-20 Y-12 Site Office U.S. Department of Energy

387

Wide field imaging of distant clusters  

E-Print Network [OSTI]

Wide field imaging is key to understanding the build-up of distant clusters and their galaxy population. By focusing on the so far unexplored outskirts of clusters, where infalling galaxies first hit the cluster potential and the hot intracluster medium, we can help separate cosmological field galaxy evolution from that driven by environment. I present a selection of recent advancements in this area, with particular emphasis on Hubble Space Telescope wide field imaging, for its superior capability to deliver galaxy morphologies and precise shear maps of distant clusters.

T. Treu

2004-08-05T23:59:59.000Z

388

Taylor Vortices in Wide Spherical Shells  

Science Journals Connector (OSTI)

It was believed that no Taylor vortices would exist in wide spherical shells with an aspect ratio of ?>0.24. In contrast, we have experimentally generated Taylor vortices in a relatively wide spherical shell with ?=0.33 using some special initial conditions. It is found that the Taylor vortices remain very stable in a range of the Reynolds number 467

M. Liu, C. Blohm, C. Egbers, P. Wulf, and H. J. Rath

1996-07-08T23:59:59.000Z

389

Ados Co Ltd Dong Yang Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Ados Co Ltd Dong Yang Semiconductor Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name Ados Co Ltd (Dong Yang Semiconductor) Place Seoul, Seoul, Korea (Republic) Product Korean manufacturer of semiconductors; through Ersol's technology, will develop PV plants and begin to roll out crystalline silicon wafers and cells by H2 2007. Coordinates 37.557121°, 126.977379° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.557121,"lon":126.977379,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

390

Semiconductor Components Industries, LLC, 2004 July, 2004 -Rev. 13  

E-Print Network [OSTI]

© Semiconductor Components Industries, LLC, 2004 July, 2004 - Rev. 13 Publication Order Number: LM339/D 1 LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 Single Supply Quad Comparators://onsemi.com TSSOP-14 DTB SUFFIX CASE 948G 1 14 #12;LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 http

Ravikumar, B.

391

Electric-dipole-induced spin resonance in disordered semiconductors  

E-Print Network [OSTI]

ARTICLES Electric-dipole-induced spin resonance in disordered semiconductors MATHIAS DUCKHEIM One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving

Loss, Daniel

392

Optical absorption intensity of semiconductor single-wall carbon nanotubes  

E-Print Network [OSTI]

Optical absorption intensity of semiconductor single-wall carbon nanotubes Y. Oyama1 , R. Saito1. The optical absorption intensity is inversely proportional to the diameter in the unit of per carbon atom of single-wall carbon nanotubes (SWNT) synthesized by alcohol CCVD (ACCVD) method and HiPco method [1

Maruyama, Shigeo

393

Single-photon imaging in complementary metal oxide semiconductor processes  

Science Journals Connector (OSTI)

...integrated in new materials, e.g. germanium-on-silicon...implemented as an active or as passive...bias of the cathode or the anode...A review of active and passive...voltage at the cathode to follow an...semiconductor material with decreasing...region. The cathode (in this case...whereas active quenching is...

2014-01-01T23:59:59.000Z

394

CHARACTERISATION OF SEMICONDUCTOR OPTICAL AMPLIFIERS FOR ALL-OPTICAL REGENERATION  

E-Print Network [OSTI]

electrical pumping, broad spectral range and opportunities for integration and mass production. Among these components, the semiconductor optical amplifier (SOA) with gain saturation, low optical and electrical power Various SOAs from Alcatel-Thales III-V lab were characterized in the framework of the French project FUTUR

Paris-Sud XI, Université de

395

Electronic displays using optically pumped luminescent semiconductor nanocrystals  

SciTech Connect (OSTI)

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

2014-03-25T23:59:59.000Z

396

Profiling the Thermoelectric Power of Semiconductor Junctions with  

E-Print Network [OSTI]

sources realize energy conversion between heat and electricity without the use of moving me- chanical the thermoelectric power, band struc- tures, and carrier concentrations of semiconductor junctions that constitute S is governed by local carrier statistics, SThEM allows us to profile precise elec- tronic junction locations

397

Hydrogen in compound semiconductors M. D. McCluskeya)  

E-Print Network [OSTI]

Hydrogen in compound semiconductors M. D. McCluskeya) and N. M. Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304 Received 9 October 1998; accepted 18 December 1998 Hydrogen can consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease

McCluskey, Matthew

398

FLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS  

E-Print Network [OSTI]

= heat, f = LO-mode, g = LO, h = LA-mode, i = negligible, j = remote heat sink 7/ 70 #12;Heat conductionFLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS Mihir Sen Department · Shallow water analogy · Vorticity dynamics · Linear stability analysis · Numerical simulations of heat

Sen, Mihir

399

Semiconductor gamma radiation detectors: band structure effects in energy resolution  

E-Print Network [OSTI]

high precision and in a broad energy range, the number of created pairs N is just proportional (referred to as the pair excitation energy). For semiconductor materials the pair excitation energy becomes important in the search for materials with improved energy resolution. #12;Theoretical models used

Luryi, Serge

400

Method for altering the luminescence of a semiconductor  

DOE Patents [OSTI]

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

Barbour, J.C.; Dimos, D.B.

1999-01-12T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications  

Science Journals Connector (OSTI)

Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10–14 August, Hamilton, Ontario, Canada) and the scope was expanded to include renewable energy research and development. This special issue of Nanotechnology is devoted to a better understanding of the function and design of semiconductor devices that are relevant to information technology (both electronics and photonics based) and renewable energy applications. The papers contained in this special issue are selected from the NGC/CSTC2009 symposium. Among them is a report by Ray LaPierre from McMaster University and colleagues at the University of Waterloo in Canada on the ability to manipulate single spins in nanowire quantum bits. The paper also reports the development of a testbed of a few qubits for general quantum information processing tasks [1]. Lower cost and greater energy conversion efficiency compared with thin film devices have led to a high level of activity in nanowire research related to photovoltaic applications. This special issue also contains results from an impedance spectroscopy study of core–shell GaAs nanowires to throw light on the transport and recombination mechanisms relevant to solar cell research [2]. Information technology research and renewable energy sources are research areas of enormous public interest. This special issue addresses both theoretical and experimental achievements and provides a stimulating outlook for technological developments in these highly topical fields of research. References [1] Caram J, Sandoval C, Tirado M, Comedi D, Czaban J, Thompson D A and LaPierre R R 2101 Nanotechnology 21 134007 [2] Baugh J, Fung J S and LaPierre RR 2010 Nanotechnology 21 134018

Stephen Goodnick; Anatoli Korkin; Predrag Krstic; Peter Mascher; John Preston; Alex Zaslavsky

2010-01-01T23:59:59.000Z

402

Orc Notation Structured Wide-Area Programming  

E-Print Network [OSTI]

Orc Notation Structured Wide-Area Programming Jayadev Misra Department of Computer Science University of Texas at Austin http://orc.csres.utexas.edu April 12, 2010 Rennes, France #12;Orc Notation hierarchical structure. #12;Orc Notation Orc · Goal: Internet scripting language. · Next: Component integration

Misra, Jayadev

403

Structured Wide-Area Programming: Orc Calculus  

E-Print Network [OSTI]

Structured Wide-Area Programming: Orc Calculus Jayadev Misra Department of Computer Science University of Texas at Austin http://orc.csres.utexas.edu #12;Concurrency · ubiquitous. · difficult interactions. · Support hierarchical structure. #12;Orc · Initial Goal: Internet scripting language. · Next

Misra, Jayadev

404

Utilization of the world wide web  

Science Journals Connector (OSTI)

Two aspects of utilization of the World Wide Web are examined: (i) the communication of technical data through web cites that provide repositories of atomic and molecular data accessible through searchable databases; and (ii) the communication about issues of mutual concern among data producers data compilers and evaluators and data users.

Peter Mohr; Gary Mallard; Uri Ralchenko; David Schultz

1998-01-01T23:59:59.000Z

405

Product Design in Enterprise Wide Optimization  

E-Print Network [OSTI]

Product Design in Enterprise Wide Optimization Paul Arch, Michel Berghmans, Hany Farag NOVA · Simulation tools ­ Polymers/Plus ­ process modeling ­ Predici ­ reactor modeling ­ Gap analysis of commercial + M Dn + P1 Termination by combination Pn + Pm Dn+m Reactor model modified to resemble additional

Grossmann, Ignacio E.

406

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents [OSTI]

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2014-01-28T23:59:59.000Z

407

DFAS Wide-Area Workflow Issues  

Broader source: Energy.gov (indexed) [DOE]

DFAS Wide-Area Workflow DFAS Wide-Area Workflow Issues Mark Shvartzman Sr. Project Manager, CEM, CEA Southern California Edison Presented at the Spring FUPWG Meeting April 20, 2011 What We Are Going to Discuss * Review Delivery Order or Task Order for accounting lines information. * Contact Contracting Officer or Contracting specialist and request Pay DoDAAC and Ext. information * Create Payment Log by ACRN * Start creating Invoice How the WAWF works and how to navigate through: 2 CONTRACT N68711-03-G-4019 DO#0028 Pay Records Bill by CLIN Award $ by CLIN Billed To Date Invoice number Pay Total Balance by CLIN 7500009733 $330,899.11 CLIN 0001AA 674,220.00 674,220.00 7500009733 7500012596 674,220.00 0.00 7500012596 $641,344.69 CLIN 0001AB 325,780.00 298023.8 27,756.20 7500012596 7500015079 325,780.00

408

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect (OSTI)

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

409

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect (OSTI)

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

410

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network [OSTI]

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernabéu, José; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin

2014-01-01T23:59:59.000Z

411

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network [OSTI]

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

ATLAS Collaboration

2014-04-29T23:59:59.000Z

412

Semiconductor laser devices having lateral refractive index tailoring  

DOE Patents [OSTI]

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Ashby, Carol I. H. (Edgewood, NM); Hadley, G. Ronald (Alburquerque, NM); Hohimer, John P. (Albuquerque, NM); Owyoung, Adelbert (Albuquerque, NM)

1990-01-01T23:59:59.000Z

413

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network [OSTI]

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

414

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode  

Science Journals Connector (OSTI)

We report the demonstration of hybrid high-Tc-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+? combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+? combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2012-12-27T23:59:59.000Z

415

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

SciTech Connect (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

416

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

SciTech Connect (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

417

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

418

Method for measuring the drift mobility in doped semiconductors  

DOE Patents [OSTI]

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

419

Imaging of semiconductors using a flying laser spot scanning system  

E-Print Network [OSTI]

be obsezved in the wavelength vs. absorption coefficient curves shown in Figure 1 for both a direct and an indirect semiconductor material (gallium-arsenide and silicon). It is only in the direct absorption and subsequent generation of a hole electron pair... in wavelength of light used to generate carriers pro- vides some contzol over the depth of the material analyzed. Long wavelength energy (- 1 micrometer) penetrates deeply into silicon, while gallium phosphide is considered almost transparent for a typical...

Richardson, Thomas William

2012-06-07T23:59:59.000Z

420

Contacts Between Metals and Between a Metal and a Semiconductor  

Science Journals Connector (OSTI)

The problem of contacts between metals and between a metal and a semiconductor is treated classically with the help of the results of wave mechanical theory of electron energy states in solids. The potential and electron density distributions in the two bodies near the contact are discussed. The bodies are assumed to be in immediate contact. The problem of a body in vacuum and the problem of two bodies separated by a gap are discussed qualitatively.

H. Y. Fan

1942-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Discontinuous Buckling of Wide Beams and Metabeams  

E-Print Network [OSTI]

We uncover how nonlinearities dramatically influence the buckling of elastic beams by means of experiments, simulations and theory. We show that sufficiently wide, ordinary elastic beams exhibit discontinuous buckling, an unstable form of buckling where the post-buckling stiffness is negative. We develop a 1D model that matches our data and identify nonlinearity as the main cause for negative stiffness. Finally, we create nonlinear metamaterials that allow us to rationally design the (negative) post-buckling stiffness of metabeams, independently of beam thickness, and demonstrate discontinuous buckling for metabeams as slender as 1% numerically and 5% experimentally.

Corentin Coulais; Johannes T. B. Overvelde; Luuk A. Lubbers; Katia Bertoldi; Martin van Hecke

2014-10-22T23:59:59.000Z

422

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00 The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

423

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

424

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

425

EA-1422: Final Site-wide Environmental Assessment | Department...  

Broader source: Energy.gov (indexed) [DOE]

2: Final Site-wide Environmental Assessment EA-1422: Final Site-wide Environmental Assessment Sandia National Laboratories Sandia National Laboratories (SNL) is one of three...

426

Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy...  

Broader source: Energy.gov (indexed) [DOE]

Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy Assessments at Two Aluminum Sheet Production Operations Commonwealth Aluminum: Manufacturer Conducts Plant-Wide...

427

EIS-0309: Final Site-Wide Environmental Impact Statement | Department...  

Energy Savers [EERE]

Final Site-Wide Environmental Impact Statement EIS-0309: Final Site-Wide Environmental Impact Statement The Department of Energy (DOE) limits electronic access to certain NEPA...

428

DOE Issues Final Site-Wide Environmental Impact Statement for...  

Broader source: Energy.gov (indexed) [DOE]

Issues Final Site-Wide Environmental Impact Statement for the Nevada National Security Site DOE Issues Final Site-Wide Environmental Impact Statement for the Nevada National...

429

EIS-0309: Draft Site-Wide Environmental Impact Statement | Department...  

Office of Environmental Management (EM)

Draft Site-Wide Environmental Impact Statement EIS-0309: Draft Site-Wide Environmental Impact Statement The Department of Energy (DOE) limits electronic access to certain NEPA...

430

EIS-0281: Final Site-Wide Environmental Impact Statement | Department...  

Broader source: Energy.gov (indexed) [DOE]

Final Site-Wide Environmental Impact Statement EIS-0281: Final Site-Wide Environmental Impact Statement Sandia National LaboratoriesNew Mexico DOE proposes to continue operating...

431

Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study  

SciTech Connect (OSTI)

Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-01-07T23:59:59.000Z

432

Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl  

Science Journals Connector (OSTI)

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn2CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2?B. Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn2CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

Siham Ouardi; Gerhard H. Fecher; Claudia Felser; Jürgen Kübler

2013-03-05T23:59:59.000Z

433

OR PRACTICE---R&D Project Portfolio Analysis for the Semiconductor Industry  

Science Journals Connector (OSTI)

We introduce a decision-support framework for the research and development (R&D) portfolio selection problem faced by a major U.S. semiconductor manufacturer. R&D portfolio selection is of critical importance to high-tech operations such as semiconductors ... Keywords: R&D project interdependency, R&D/project selection, multiperiod horizon, organizational studies/strategy, programming/stochastic, scenario generation, semiconductor industry

Banu Gemici-Ozkan; S. David Wu; Jeffrey T. Linderoth; Jeffry E. Moore

2010-11-01T23:59:59.000Z

434

Wide band stepped frequency ground penetrating radar  

DOE Patents [OSTI]

A wide band ground penetrating radar system (10) embodying a method wherein a series of radio frequency signals (60) is produced by a single radio frequency source (16) and provided to a transmit antenna (26) for transmission to a target (54) and reflection therefrom to a receive antenna (28). A phase modulator (18) modulates those portion of the radio frequency signals (62) to be transmitted and the reflected modulated signal (62) is combined in a mixer (34) with the original radio frequency signal (60) to produce a resultant signal (53) which is demodulated to produce a series of direct current voltage signals (66) the envelope of which forms a cosine wave shaped plot (68) which is processed by a Fast Fourier Transform unit 44 into frequency domain data (70) wherein the position of a preponderant frequency is indicative of distance to the target (54) and magnitude is indicative of the signature of the target (54).

Bashforth, Michael B. (Buellton, CA); Gardner, Duane (Santa Maria, CA); Patrick, Douglas (Santa Maria, CA); Lewallen, Tricia A. (Ventura, CA); Nammath, Sharyn R. (Santa Barbara, CA); Painter, Kelly D. (Goleta, CA); Vadnais, Kenneth G. (Alexandria, VA)

1996-01-01T23:59:59.000Z

435

Plant Wide Assessment for SIFCO Industries, Inc.  

SciTech Connect (OSTI)

Sifco Industries carreid out a plant wide energy assessment under a collaborative program with the U.S. Department of Energy during October 2004 to September 2005. During the year, personnel from EIS, E3M, DPS, BuyCastings.Com, and Sifco plant facilities and maintenance personnel, as a team collected energy use, construction, process, equipment and operational information about the plant. Based on this information, the team identified 13 energy savings opportunities. Near term savings opportunities have a total potential savings of about $1,329,000 per year and a combined simple payback of about 11 months. Implementation of these recommendations would reduce CO2 emissions by about 16,000,000 pounds per year, which would reduce overall plant CO2 emissions by about 45%. These totals do not include another $830,000 per year in potential savings with an estimated 9-month payback, from converting the forging hammers from steam to compressed air.

Kelly Kissock, Arvind Thekdi et. al.

2005-07-06T23:59:59.000Z

436

Imaging spectrometer wide field catadioptric design  

DOE Patents [OSTI]

A wide field catadioptric imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The catadioptric design has zero Petzval field curvature. The imaging spectrometer comprises an entrance slit for transmitting light, a system with a catadioptric lens and a dioptric lens for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the system for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the system for receiving the light and the system for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light through the system for receiving the light to the detector array.

Chrisp; Michael P. (Danville, CA)

2008-08-19T23:59:59.000Z

437

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms  

Science Journals Connector (OSTI)

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is...

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I C O; Artigas, David; Loza-Alvarez, Pablo

2011-01-01T23:59:59.000Z

438

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate  

DOE Patents [OSTI]

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

439

Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"  

E-Print Network [OSTI]

This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

Scully, Marlan O

2010-01-01T23:59:59.000Z

440

Type-II quasi phase matching in periodically intermixed semiconductor superlattice waveguides  

E-Print Network [OSTI]

. Many semicon- ductors have nonlinear optical susceptibilities with values well in excess of conventional materials, such as lithium niobate. Semiconductors have an addi- tional advantage

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

E-Print Network 3.0 - average power semiconductor Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

externalexternal, and power, and power efficiencyefficiency 12;25 Optoelectronic Semiconductor... cavity light emitting diodesResonant cavity light emitting diodes...

442

E-Print Network 3.0 - active complementary metal-oxide-semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion-implanted p and n dopants in germanium Summary: wavelength spectrum allowing optoelectronic integra- tion to enhance complementary-metal-oxide- semiconductor... lim- its in...

443

E-Print Network 3.0 - ag-in-s ternary semiconductor Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering 14 Semiconductor Materials S. K. Tewksbury Summary: and for optoelectronic devices. Optoelectronics has taken advantage of ternary and quaternary III-V...

444

E-Print Network 3.0 - atlas semiconductor tracker Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Powered by Explorit Topic List Advanced Search Sample search results for: atlas semiconductor tracker Page: << < 1 2 3 4 5 > >> 1 ATLAS Tracker Upgrade: Silicon Strip...

445

Cooling by adiabatic magnetization of a degenerate semiconductor in the ultra-quantum region  

Science Journals Connector (OSTI)

The possibility of using the adiabatic magnetization of a degenerate semiconductor in the ultra-quantum region for producing temperatures below 100 mK is examined.

J. -P. Jay-Gerin; A. Briggs

1981-11-01T23:59:59.000Z

446

E-Print Network 3.0 - area metal-oxide-semiconductor electron...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

inversion layer mobility Joo-Hiuk Son,a) Seongtae... measured absorption of terahertz radiation pulses by metal-oxide-semiconductor MOS inversion layers... of the...

447

CONJUGATED POLYMERS AND POLYELECTROLYTES IN SOLAR PHOTOCONVERSION, Final Technical Report  

SciTech Connect (OSTI)

This DOE-supported program investigated the fundamental properties of conjugated polyelectrolytes, with emphasis placed on studies of excited state energy transport, self-assembly into conjugated polyelectroyte (CPE) based films and colloids, and exciton transport and charge injection in CPE films constructed atop wide bandgap semiconductors. In the most recent grant period we have also extended efforts to examine the properties of low-bandgap donor-acceptor conjugated polyelectrolytes that feature strong visible light absorption and the ability to adsorb to metal-oxide interfaces.

Schanze, Kirk S [University of Florida] (ORCID:0000000333424080)

2014-08-05T23:59:59.000Z

448

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures  

SciTech Connect (OSTI)

Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

Verma, Jai, E-mail: jverma@nd.edu; Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-01-13T23:59:59.000Z

449

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

450

Coherent instabilities in a semiconductor laser with fast gain recovery  

E-Print Network [OSTI]

Coherent instabilities in a semiconductor laser with fast gain recovery Christine Y. Wang,1 L. Diehl,2 A. Gordon,3 C. Jirauschek,3 F. X. K?rtner,3,* A. Belyanin,4 D. Bour,5 S. Corzine,5 G. H?fler,5 M. Troccoli,2 J. Faist,6 and Federico Capasso2.... The different quantities reported on the graph were deduced from the experimental data shown in #1;a#2;. The dashed line is a least-square linear fit of the data. WANG et al. PHYSICAL REVIEW A 75, 031802#1;R#2; #1;2007#2; RAPID COMMUNICATIONS 031802...

Wang, Christine Y.; Diehl, L.; Gordon, A.; Jirauschek, C.; Kartner, F. X.; Belyanin, Alexey; Bour, D.; Corzine, S.; Hofler, G.; Troccoli, M.; Faist, J.; Capasso, Federico

2007-01-01T23:59:59.000Z

451

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network [OSTI]

- Magnetization relaxation in ?Ga,M Jairo Sinova,1 T. Jungwirth,2,3 X. Liu,4 Y. Sasaki,4 J. K 1Department of Physics, Texas A&M Universit 2Institute of Physics ASCR, Cukrovarnick 3Department of Physics, University of Texa 4Department of Physics, University... is currently the focus of a considerable experimental16 and theoretical17 research. Spin-transfer switching has not yet been demonstrated in all-semiconductor systems, but the effect promises to have a richer phenomenology in this case because...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

452

Electric Field effects on quantum correlations in semiconductor quantum dots  

E-Print Network [OSTI]

We study the effect of external electric bias on the quantum correlations in the array of optically excited coupled semiconductor quantum dots. The correlations are characterized by the quantum discord and concurrence and are observed using excitonic qubits. We employ the lower bound of concurrence for thermal density matrix at different temperatures. The effect of the F\\"orster interaction on correlations will be studied. Our theoretical model detects nonvanishing quantum discord when the electric field is on while concurrence dies, ensuring the existence of nonclassical correlations as measured by the quantum discord.

S. Shojaei; M. Mahdian; R. Yousefjani

2012-05-01T23:59:59.000Z

453

Solubility of Flaws in Heavily-Doped Semiconductors  

Science Journals Connector (OSTI)

The solubility of a charged impurity in a semiconductor depends upon the Fermi level. This dependence may be understood in terms of a conceptual model in which an impurity is allowed to diffuse in a specimen containing a p-n junction, so that the Fermi level varies in respect to the band edges. If the impurity can exist in many states of charge (i.e., is a "flaw"), then the concentration of flaws with charge r times the electronic charge varies as the rth power of the hole density. Summing the concentrations for the different states of charge gives the solubility and its dependence upon hole concentration, and, hence, Fermi level.

W. Shockley and J. L. Moll

1960-09-01T23:59:59.000Z

454

Semiconductor-To-Metal Transitions in Transition-Metal Compounds  

Science Journals Connector (OSTI)

The theory presented in a previous paper is applied to the transition-metal compounds which are known to exhibit semiconductor-to-metal transitions. In particular, the predictions of the theory are compared with the experimental results of Feinleib and Paul on V2O3. Very good agreement is obtained for the magnitude of the energy gap and for its pressure and stress coefficients. The theory appears to be consistent with the available data on the other oxides of vanadium and titanium as well. Band models for all of these compounds are suggested. The effects of spin-disorder scattering and broadening, polaron formation, and non-stoichiometry are considered quantitatively.

David Adler; Julius Feinleib; Harvey Brooks; William Paul

1967-03-15T23:59:59.000Z

455

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao,  

E-Print Network [OSTI]

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han emission factor is an important parameter for the characterization of semiconductor light emitting devices difference involved in each device. In this article, the spontaneous emission factor for superluminescent

Cao, Hui

456

Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors  

E-Print Network [OSTI]

In this work we apply the methods of band structure calculation combined with self-consistent treatment of the light-matter interaction to a variety of problems in bulk semiconductors and semiconductor heterostructures as well as in new...

Cho, Yong Hee 1976-

2011-05-06T23:59:59.000Z

457

Wide Area Security Region Final Report  

SciTech Connect (OSTI)

This report develops innovative and efficient methodologies and practical procedures to determine the wide-area security region of a power system, which take into consideration all types of system constraints including thermal, voltage, voltage stability, transient and potentially oscillatory stability limits in the system. The approach expands the idea of transmission system nomograms to a multidimensional case, involving multiple system limits and parameters such as transmission path constraints, zonal generation or load, etc., considered concurrently. The security region boundary is represented using its piecewise approximation with the help of linear inequalities (so called hyperplanes) in a multi-dimensional space, consisting of system parameters that are critical for security analyses. The goal of this approximation is to find a minimum set of hyperplanes that describe the boundary with a given accuracy. Methodologies are also developed to use the security hyperplanes, pre-calculated offline, to determine system security margins in real-time system operations, to identify weak elements in the system, and to calculate key contributing factors and sensitivities to determine the best system controls in real time and to assist in developing remedial actions and transmission system enhancements offline . A prototype program that automates the simulation procedures used to build the set of security hyperplanes has also been developed. The program makes it convenient to update the set of security hyperplanes necessitated by changes in system configurations. A prototype operational tool that uses the security hyperplanes to assess security margins and to calculate optimal control directions in real time has been built to demonstrate the project success. Numerical simulations have been conducted using the full-size Western Electricity Coordinating Council (WECC) system model, and they clearly demonstrated the feasibility and the effectiveness of the developed technology. Recommendations for the future work have also been formulated.

Makarov, Yuri V.; Lu, Shuai; Guo, Xinxin; Gronquist, James; Du, Pengwei; Nguyen, Tony B.; Burns, J. W.

2010-03-31T23:59:59.000Z

458

Monte-Carlo simulations of light propagation in luminescent solar concentrators based on semiconductor nanoparticles  

E-Print Network [OSTI]

wavelengths, which can be more efficiently converted to electricity by a PV cell. To achieve this, most-remission events. This is also a big advantage over conventional single material semiconductor nanopar- ticles of semiconductor-based LSCs in detail we employ Monte Carlo simulations (see Sec. II) using the measured data

Ilan, Boaz

459

Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1  

E-Print Network [OSTI]

Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1 Su-Huai Wei,2 Renewable Energy Laboratory, Golden, Colorado 80401, USA (Received 13 July 2012; revised manuscript received, and the exciton binding energy Eb in technologically important semiconductors varies from merely a few me

Wu, Zhigang

460

Fall-2003 PH-314 A. La Rosa I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR  

E-Print Network [OSTI]

Fall-2003 PH-314 A. La Rosa JUNCTIONS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR of the JUNCTION V. FORWARD BIAS, REVERSE BIAS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR MATERIALS Let III. CHEMICAL POTENTIAL (FERMI LEVEL) IV. COMPARISON of CHARGE-CARRIER POPULATION at EACH SIDE

La Rosa, Andres H.

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461

Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT  

Science Journals Connector (OSTI)

Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT ... In a dielectric environment, the electrostatic force between the electron and the hole can be approximated by the eq 1. ... Madelung, O. Semiconductors: Data Handbook, 3rd ed.; Springer: New York, 2004. ...

Tangui Le Bahers; Michel Rérat; Philippe Sautet

2014-02-28T23:59:59.000Z

462

Semiconductor sensors for the detection of uorocarbons, uorine and hydrogen uoride  

E-Print Network [OSTI]

Semiconductor sensors for the detection of ¯uorocarbons, ¯uorine and hydrogen ¯uoride W. Moritza±insulator±semiconductor structure gas sensors based on silicon or silicon carbide to different ¯uorine- containing gases was studied in the temperature range 20±5308C. Silicon based gas sensors could be used for the determination of ¯uorine

Moritz, Werner

463

Frster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum dots for solid  

E-Print Network [OSTI]

F�rster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum August 2009; published online 15 October 2009 In this paper, we present F�rster resonance energy transfer FRET -enhanced color-conversion using colloidal semiconductor quantum dot nanocrystals NCs to make

Demir, Hilmi Volkan

464

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Broader source: Energy.gov (indexed) [DOE]

5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE-FC26-05NT42341, SUBCONTRACT QZ001; W(A)-05-017, CH-1280 The Petitioner, OSRAM Opto Semiconductor (Osram) was awarded a subcontract under this cooperative agreement for the performance of work entitled, "Scaling Up KiloLumen Solid- State Lighting Exceeding 100 LPW via Remote Phosphor." The cooperative agreement was awarded to Light Prescriptions Innovators, LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens per watt (LPW). The new white LED light source will use multiple

465

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents [OSTI]

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2002-01-01T23:59:59.000Z

466

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents [OSTI]

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2000-01-01T23:59:59.000Z

467

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Molvik, Arthur W. (Livermore, CA); Ellingboe, Albert R. (Fremont, CA)

1998-01-01T23:59:59.000Z

468

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

Molvik, A.W.; Ellingboe, A.R.

1998-10-20T23:59:59.000Z

469

Organic Semiconductors for Low—Cost Solar Cells  

Science Journals Connector (OSTI)

The current cost of solar electricity derived from silicon photovoltaics is about 30 to 40 cents per kilowatt—hour. This cost is similar to peak—power charges in California during the height of summer thus establishing a partial path to economic viability. However this competitiveness is not viable in other seasons and many other locations. This paper will discuss the basic theory and progress of a new class of photovoltaic semiconductors derived from organic polymer materials. These materials have obtained promising results with 5% conversion efficiency. In addition these materials can be manufactured relatively easily by using printing technologies and roll?to?roll coating machines similar to those used to make photographic film or newspapers. Solar cells made this way would not only be cheaper but could also be incorporated into roofing materials to reduce installation costs. Organic semiconductors can be dissolved in common solvents and sprayed or printed onto substrates so they are very promising candidates for the solar production of electricity.

Michael D. McGehee; Chiatzun Goh

2008-01-01T23:59:59.000Z

470

High-efficiency photovoltaics based on semiconductor nanostructures  

SciTech Connect (OSTI)

The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

Yu, Paul K.L. [University of California, San Diego; Yu, Edward T. [University of Texas at Austin; Wang, Deli [University of California, San Diego

2011-10-31T23:59:59.000Z

471

Lattice thermal expansion for normal tetrahedral compound semiconductors  

SciTech Connect (OSTI)

The cubic root of the deviation of the lattice thermal expansion from that of the expected value of diamond for group IV semiconductors, binary compounds of III-V and II-VI, as well as several ternary compounds from groups I-III-VI{sub 2}, II-IV-V{sub 2} and I-IV{sub 2}V{sub 3} semiconductors versus their bonding length are given straight lines. Their slopes were found to be 0.0256, 0.0210, 0.0170, 0.0259, 0.0196, and 0.02840 for the groups above, respectively. Depending on the valence electrons of the elements forming these groups, a formula was found to correlate all the values of the slopes mentioned above to that of group IV. This new formula which depends on the melting point and the bonding length as well as the number of valence electrons for the elements forming the compounds, will gives best calculated values for lattice thermal expansion for all compounds forming the groups mentioned above. An empirical relation is also found between the mean ionicity of the compounds forming the groups and their slopes mentioned above and that gave the mean ionicity for the compound CuGe{sub 2}P{sub 3} in the range of 0.442.

Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)]. E-mail: dr_m_s_omar@yahoo.com

2007-02-15T23:59:59.000Z

472

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

473

Modeling pulsed-laser melting of embedded semiconductor nanoparticles  

E-Print Network [OSTI]

Introduction Phase change materials are studied widely forsteps for possible phase change material applications. InPhase change applications require a method of reliably switching the material

Sawyer, C.A.

2012-01-01T23:59:59.000Z

474

Garbage Collecting the World Wide Web Stephen M. Watt  

E-Print Network [OSTI]

Garbage Collecting the World Wide Web Stephen M. Watt Western University London, Ontario, Canada N6A 5B7 Stephen.Watt@uwo.ca Abstract The World Wide Web has grown over the past decade and a half from

Watt, Stephen M.

475

ECONOMIC IMPACTS OF A WIDE AREA RELEASE OF ANTHRAX  

E-Print Network [OSTI]

ECONOMIC IMPACTS OF A WIDE AREA RELEASE OF ANTHRAX May 2009 Prepared Regional Technology Center for Homeland Security Economic Impacts of a Wide Area Release of Anthrax KS .................................................................................................................................................. 1 Categories of Economic Impacts

476

Advanced applications in wide-area impedance sensing  

E-Print Network [OSTI]

In this thesis a wide-area impedance sensor used in hyperspectral imaging for a wide variety of applications is presented. Building on previous work, this sensor is decoupled from fluorescent lamps and thus is used to ...

George, Elizabeth C. (Elizabeth Christine)

2014-01-01T23:59:59.000Z

477

EA-1968: Final Site-Wide Environmental Assessment  

Broader source: Energy.gov [DOE]

National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus Site-Wide Environmental Assessment, Golden, Colorado

478

EA-1914: Final Site-Wide Environmental Assessment  

Broader source: Energy.gov [DOE]

National Renewable Energy Laboratory (NREL) National Wind Technology Center (NWTC) Site-Wide Environmental Assessment, Golden, Colorado

479

Blog Feed: Vehicles | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Blog Feed: Vehicles Blog Feed: Vehicles Blog Feed: Vehicles RSS January 16, 2014 Live Discussion on Energy 101: Fuel Cells Watch our Google+ Hangout on Energy 101: Fuel Cells to learn everything you need to know about fuel cells. January 15, 2014 Wide Bandgap Semiconductors: Essential to Our Technology Future Learn how wide bandgap semiconductor-based power electronics could impact clean energy technology and our daily lives. January 6, 2014 The Clean Energy Economy in Three Charts Over the last five years, American inventors and investors have made significant progress in developing and deploying key clean energy technologies -- supported by Energy Department policies. January 3, 2014 Our Best Energy Videos of 2013 Check out our best videos from 2013 -- from Secretary Moniz's first day on

480

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

Note: This page contains sample records for the topic "wide bandgap semiconductors" from the National Library of EnergyBeta (NLEBeta).
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481

Benefits of Site-wide NEPA Review | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Benefits of Site-wide NEPA Review Benefits of Site-wide NEPA Review Benefits of Site-wide NEPA Review The purpose of this guidance memorandum is to describe potential benefits of conducting a site-wide NEPA review (environmental impact statement or environmental assessment). I believe that this information will help program and field offices prepare their annual NEPA planning summaries and their overall NEPA compliance strategies. Site-wide reviews can aid the Department of Energy (DOE) in meeting its goals to streamline the NEPA process, to make that process more useful to decision makers and the public, and to reduce the time and cost required to prepare NEPA documents Benefits of Site-wide NEPA Review More Documents & Publications Benefits of Site-wide NEPA National Environmental Policy Act Review (1994)

482

Interconnection-Wide Transmission Planning Initiative: Topic A,  

Broader source: Energy.gov (indexed) [DOE]

Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning A description of the requirements for Topic A for all Interconnections under the Interconnection-Wide Transmission Planning Initiative, part of the American Recovery and Reinvestment Act. Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning More Documents & Publications Microsoft Word - yDE-FOA-0000068.rtf Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Eastern Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation

483

Transforming the Lighting Sector with Semiconductor Lighting Technologies  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

17-TED-000924-9/27 SR#2000-2333C 17-TED-000924-9/27 SR#2000-2333C Transforming the Lighting Sector With Semiconductor Lighting Technologies Thomas Drennen Sandia National Laboratories Roland Haitz Agilent Technologies Jeffrey Tsao E20 Communications Sandia National Laboratories USAEE/IAEE Annual Meetings Philadelphia, PA September 24-27, 2000 Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000 2 6217-TED-000924-9/27 SR#2000-2333C Overview * Introduction * U.S. Lighting Demand * Evolution of LEDs * The LED Simulation Model (LEDSim) * Results 3 6217-TED-000924-9/27 SR#2000-2333C Introduction 0 50 100 150 200 1970 1980 1990 2000 2010 2020 Efficiency (lm/W) Year Incandescent Halogen Fluorescent Semi- conductor

484

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents [OSTI]

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

485

Experimental verification of Förster energy transfer between semiconductor quantum dots  

Science Journals Connector (OSTI)

In recent years, energy transfer (ET) using semiconductor quantum dots (QDs) is getting increased attention. However, it has been postulated that ET between QDs is based on the Förster model, which is a well-established model of ET mechanism in organic dye systems, without verification. In this work, we have investigated ET mechanism in colloidal CdS QDs measuring photoluminescence dynamics of a bilayer structure consisting of differently sized CdS QDs. In the bilayer structure, the distance between the monolayer of donor QDs and that of acceptor QDs was controlled precisely by a spacer layer that is layer-by-layer assembly of polyelectrolytes. The bilayer structure enabled us to systematically measure the spacer-layer dependence of photoluminescence dynamics reflecting the ET process between QDs. It is demonstrated that ET between the donor and acceptor QDs is conclusively dominated by the dipole-dipole interaction, which verifies the appropriateness of the Förster model.

DaeGwi Kim; Shinya Okahara; Masaaki Nakayama; YongGu Shim

2008-10-02T23:59:59.000Z

486

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

487

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents [OSTI]

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

488

High gain photoconductive semiconductor switch having tailored doping profile zones  

DOE Patents [OSTI]

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

489

Electronic stopping?power calculations for heavy ions in semiconductors  

Science Journals Connector (OSTI)

A model for ion stopping in semiconductors which considers separate stopping contributions from valence and core electrons and explicitly includes the effect of the gap has been used to calculate the electronic stopping power of energetic B P and As in Si Ge GaAs and CdTe for projectile energies 10 keV–100 MeV. Account was taken of the partially stripped incident ions by means of the effective charge. There is good agreement at low ion velocity with Lindhard and Scharff’s [J. Lindhard and M. Scharff Phys. Rev. 1 2 4 128 (1961)] values which for heavy ions do not depend on effective charge theory as well as with the semiempirical curves at energies E?0.2 MeV/nucleon where they can be compared.

S. G. Elkomoss; A. Pape; S. Unamuno

1990-01-01T23:59:59.000Z

490

The silicon microstrip sensors of the ATLAS semiconductor tracker  

SciTech Connect (OSTI)

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

ATLAS SCT Collaboration; Spieler, Helmuth G.

2007-04-13T23:59:59.000Z

491

The development of large area saturable Bragg reflectors for the generation of widely-tunable ultra-short pulses  

E-Print Network [OSTI]

This thesis focuses on the realization of two photonic devices; 1) semiconductor lasers and 2) large area broadband Saturable Bragg Reflectors (SBRs). Semiconductor lasers explore the use of 3D and 2D quantum confinement ...

Nabanja, Sheila P

2012-01-01T23:59:59.000Z

492

Small Business Innovation Research Program Topics - October 28, 2013.  

Broader source: Energy.gov (indexed) [DOE]

TECHNOLOGY TRANSFER OPPORTUNITIES ............................... ERROR! BOOKMARK NOT DEFINED. TECHNOLOGY TRANSFER OPPORTUNITIES ............................... ERROR! BOOKMARK NOT DEFINED. FAST-TRACK (COMBINED PHASE I AND PHASE II) .................... ERROR! BOOKMARK NOT DEFINED. PROGRAM AREA OVERVIEW: OFFICE OF ENERGY EFFICIENCY AND RENEWABLE ENERGY ....... 7 1. ADVANCED MANUFACTURING ........................................................................................................................... 7 a. Manufacturing Improvements of Aluminum Nitride (AlN) for Wide Bandgap Semiconductor Power Devices ................................................................................................................................................................... 7 b. Rapid Heat Treatment of Metals........................................................................................................................... 8

493

Dye-sensitized solar cells  

DOE Patents [OSTI]

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Skotheim, Terje A. [Berkeley, CA

1980-03-04T23:59:59.000Z

494

Dye-sensitized solar cells  

DOE Patents [OSTI]

A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

Skotheim, T.A.

1980-03-04T23:59:59.000Z

495

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization  

SciTech Connect (OSTI)

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z. [and others

1996-05-01T23:59:59.000Z

496

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof  

DOE Patents [OSTI]

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04T23:59:59.000Z

497

Methods of forming semiconductor devices and devices formed using such methods  

DOE Patents [OSTI]

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

498

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 4, APRIL 2002 453 Internal Cooling in a Semiconductor Laser Diode  

E-Print Network [OSTI]

- sion, thermionic energy conversion, thermoelectric devices, ther- moelectric energy conversion to have both the optical mode and the carriers confined to the active region in order to produce for most material systems refractive index has an inverse relationship with bandgap [7]. Carrier

499

Media Advisory: Site-wide Safety Standards | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Media Advisory: Site-wide Safety Standards Media Advisory: Site-wide Safety Standards Media Advisory: Site-wide Safety Standards August 1, 2012 - 12:00pm Addthis Media Contacts Michael Turner, MSA michael_j_turner@rl.gov 509-376-2872 What: Department of Energy to announce two additions to the Hanford Site-wide Safety Standards - a set of 14 areas where Hanford contractors have collaborated to establish one uniform standard to guide safe operations. The latest additions to the Site-wide Safety Standards are Fall Protection and Electrical Safety. DOE Hanford management will explain the significance of the Site-wide Safety Standards, their use and application at the Hanford Site, the benefits to workers and the example Hanford is setting for excellence in safety. Media will then be offered a demonstration of Fall Protection training, along with other training programs at the DOE's Volpentest HAMMER Training Center, operated by Mission Support Alliance.

500

Executive Order 13583, Establishing a Coordinated Government-Wide  

Broader source: Energy.gov (indexed) [DOE]

Executive Order 13583, Establishing a Coordinated Government-Wide Executive Order 13583, Establishing a Coordinated Government-Wide Initiative to Promote Diversity and Inclusion in the Federal Workforce Executive Order 13583, Establishing a Coordinated Government-Wide Initiative to Promote Diversity and Inclusion in the Federal Workforce August 18, 2011 - 11:15am Addthis Executive Order 13583 Established a "coordinated government-wide initiative to promote diversity and inclusion in the federal workforce". Wherever possible, the Federal Government must also seek to consolidate compliance efforts established through related or overlapping statutory mandates, directions from Executive Orders, and regulatory requirements. Addthis Related Articles A Government-Wide Approach to a Diverse Workforce Executive Order 13583, Establishing a Coordinated Government-Wide Initiative to Promote Diversity and Inclusion in the Federal Workforce