National Library of Energy BETA

Sample records for wide band gap

  1. Wide band-gap nanowires for light emitting diodes

    E-Print Network [OSTI]

    Chesin, Jordan (Jordan Paul)

    2015-01-01

    Wide band-gap nanowires composed of GaN and ZnO are promising materials for unique designs and potential efficiency improvement of light emitting diodes (LEDs) for solid state lighting. The large surface-to-volume ratio ...

  2. Method for implantation of high dopant concentrations in wide band gap materials

    DOE Patents [OSTI]

    Usov, Igor (Los Alamos, NM); Arendt, Paul N. (Los Alamos, NM)

    2009-09-15

    A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100.degree. C. This combination produces high concentrations of dopants, while minimizing the defect concentration.

  3. Molecular beam epitaxy of n-type ZnS: A wide band gap emitter for heterojunction PV devices

    E-Print Network [OSTI]

    Atwater, Harry

    Molecular beam epitaxy of n-type ZnS: A wide band gap emitter for heterojunction PV devices Jeffrey and AZO transparent conductive oxides did not. Applications to novel PV devices incorporating low electron-ray diffraction, zinc compounds. I. INTRODUCTION The growing interest in scalable, thin-film photovoltaics (PV

  4. Novel wide band gap materials for highly efficient thin film tandem solar cells

    SciTech Connect (OSTI)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

  5. Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials

    SciTech Connect (OSTI)

    Dickinson, J. T.

    2014-04-05

    We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

  6. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  7. Low band gap polymers Organic Photovoltaics

    E-Print Network [OSTI]

    Low band gap polymers for Organic Photovoltaics Eva Bundgaard Ph.D. Dissertation Risø National Bundgaard Title: Low band gap polymers for Organic photovoltaics Department: The polymer department Report the area of organic photovoltaics are focusing on low band gap polymers, a type of polymer which absorbs

  8. Photonic band gap structure simulator

    DOE Patents [OSTI]

    Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.

    2006-10-03

    A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.

  9. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  10. Modeling the effect of native and laser-induced states on the dielectric breakdown of wide band gap optical materials by multiple subpicosecond laser pulses

    SciTech Connect (OSTI)

    Emmert, Luke A.; Mero, Mark; Rudolph, Wolfgang [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2010-08-15

    A model for the multiple-pulse laser-induced breakdown behavior of dielectrics is presented. It is based on a critical conduction band (CB) electron density leading to dielectric breakdown. The evolution of the CB electron density during the pulse train is calculated using rate equations involving transitions between band and mid-gap states (native and laser-induced). Using realistic estimations for the trap density and ionization cross-section, the model is able to reproduce the experimentally observed drop in the multiple-pulse damage threshold relative to the single-pulse value, as long as the CB electron density is controlled primarily by avalanche ionization seeded by multiphoton ionization of the traps and the valence band. The model shows that at long pulse duration, the breakdown threshold becomes more sensitive to presence of traps close (within one photon energy) to the CB. The effect of native and laser-induced defects can be distinguished by their saturation behavior. Finally, measurements of the multiple-pulse damage threshold of hafnium oxide films are used to illustrate the application of the model.

  11. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    SciTech Connect (OSTI)

    Bai Xianchen; Zhang Jiande; Yang Jianhua; Jin Zhenxing [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-12-15

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.

  12. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOE Patents [OSTI]

    Wanlass, Mark W. (Golden, CO)

    1994-01-01

    A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

  13. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  14. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

  15. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying...

  16. Substrate-induced band gap opening in epitaxial graphene

    E-Print Network [OSTI]

    2008-01-01

    H.A. Electronic states of graphene nanoribbons studied withS.G. Louie. Energy gaps in graphene nanoribbons. Phys. Rev.band-gap engineering of graphene nanoribbons. Phys. Rev.

  17. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOE Patents [OSTI]

    Wanlass, M.W.

    1994-12-27

    A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

  18. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

  19. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in a significant band gap, 0.26 electron volts (eV), an important step toward making graphene useful as a semiconductor. Left: In graphene's electronic band structure, the...

  20. SEMIEMPIRICAL MOLECULAR ORBITAL CALCULATIONS OF BAND GAPS OF CONJUGATED POLYMERS

    E-Print Network [OSTI]

    Goddard III, William A.

    SEMI­EMPIRICAL MOLECULAR ORBITAL CALCULATIONS OF BAND GAPS OF CONJUGATED POLYMERS Tahir Cagin Research and Development Center, Materials Labarotory, Polymer Branch, Wright Patterson AFB, Ohio 45433 geometries and energy band gaps of conjugated polymers. In this study, we used a modified version of semi

  1. Highly dispersive photonic band-gap-edge optofluidic biosensors

    E-Print Network [OSTI]

    Xiao, S; Xiao, Sanshui; Mortensen, Niels Asger

    2006-01-01

    Highly dispersive photonic band-gap-edge optofluidic biosensors are studied theoretically. We demonstrate that these structures are strongly sensitive to the refractive index of the liquid, which is used to tune dispersion of the photonic crystal. The upper frequency band-gap edge shifts about 1.8 nm for dn=0.002, which is quite sensitive. Results from transmission spectra agree well with those obtained from the band structure theory.

  2. Wide band stepped frequency ground penetrating radar

    DOE Patents [OSTI]

    Bashforth, M.B.; Gardner, D.; Patrick, D.; Lewallen, T.A.; Nammath, S.R.; Painter, K.D.; Vadnais, K.G.

    1996-03-12

    A wide band ground penetrating radar system is described embodying a method wherein a series of radio frequency signals is produced by a single radio frequency source and provided to a transmit antenna for transmission to a target and reflection therefrom to a receive antenna. A phase modulator modulates those portions of the radio frequency signals to be transmitted and the reflected modulated signal is combined in a mixer with the original radio frequency signal to produce a resultant signal which is demodulated to produce a series of direct current voltage signals, the envelope of which forms a cosine wave shaped plot which is processed by a Fast Fourier Transform Unit 44 into frequency domain data wherein the position of a preponderant frequency is indicative of distance to the target and magnitude is indicative of the signature of the target. 6 figs.

  3. Wide band stepped frequency ground penetrating radar

    DOE Patents [OSTI]

    Bashforth, Michael B. (Buellton, CA); Gardner, Duane (Santa Maria, CA); Patrick, Douglas (Santa Maria, CA); Lewallen, Tricia A. (Ventura, CA); Nammath, Sharyn R. (Santa Barbara, CA); Painter, Kelly D. (Goleta, CA); Vadnais, Kenneth G. (Alexandria, VA)

    1996-01-01

    A wide band ground penetrating radar system (10) embodying a method wherein a series of radio frequency signals (60) is produced by a single radio frequency source (16) and provided to a transmit antenna (26) for transmission to a target (54) and reflection therefrom to a receive antenna (28). A phase modulator (18) modulates those portion of the radio frequency signals (62) to be transmitted and the reflected modulated signal (62) is combined in a mixer (34) with the original radio frequency signal (60) to produce a resultant signal (53) which is demodulated to produce a series of direct current voltage signals (66) the envelope of which forms a cosine wave shaped plot (68) which is processed by a Fast Fourier Transform unit 44 into frequency domain data (70) wherein the position of a preponderant frequency is indicative of distance to the target (54) and magnitude is indicative of the signature of the target (54).

  4. Synthesis of electromagnetic modes in photonic band gap fibers

    E-Print Network [OSTI]

    Hu, Qichao

    2007-01-01

    In this paper, we report on the successful synthesis of three individual modes, HE11, TEo0, and TE02 for transmission in photonic band gap fibers at near infrared wavelengths. We measure the propagation losses of the HE11 ...

  5. Band Gap Engineering of Poly(p-phenyleneethynylene)s

    E-Print Network [OSTI]

    Myrick, Michael Lenn

    Band Gap Engineering of Poly(p-phenyleneethynylene)s: Cross-Conjugated PPE-PPV Hybrids James N. Reaction of 2 with the aldehydes 3a-f in the presence of sodium hydride in THF furnishes the diiodides 4

  6. Photonic-Band-Gap Traveling-Wave Gyrotron Amplifier

    E-Print Network [OSTI]

    Nanni, Emilio Alessandro

    We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and ...

  7. Band gap engineering strategy via polarization rotation in perovskite ferroelectrics

    SciTech Connect (OSTI)

    Wang, Fenggong Grinberg, Ilya; Rappe, Andrew M.

    2014-04-14

    We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2?eV through local rhombohedral-to-tetragonal structural transition. Furthermore, the strong polarization of the rhombohedral perovskite is largely preserved by its tetragonal counterpart. The B-cation off-center displacements and the resulting enhancement of the antibonding character in the conduction band give rise to the wider band gaps of the rhombohedral perovskites. The correlation between the structure, polarization orientation, and electronic structure lays a good foundation for understanding the physics of more complex perovskite solid solutions and provides a route for the design of photovoltaic perovskite ferroelectrics.

  8. Prediction of a low band gap oxide ferroelectric

    SciTech Connect (OSTI)

    Xu, Bo [National University of Singapore; Singh, David J [ORNL; Cooper, Valentino R [ORNL; Feng, Yuan Ping [National University of Singapore

    2011-01-01

    A strategy for obtaining low band gap oxide ferroelectrics based on charge imbalance is described and illustrated by first-principles studies of the hypothetical compound Bi{sub 6}Ti{sub 4}O{sub 17}, which is an alternate stacking of the ferroelectric Bi{sub 4}Ti{sub 3}O{sub 12}. We find that this compound is ferroelectric, similar to Bi{sub 4}Ti{sub 3}O{sub 12} although with a reduced polarization. Importantly, calculations of the electronic structure with the recently developed functional of Tran and Blaha yield a much reduced band gap of 1.83 eV for this material compared to Bi{sub 4}Ti{sub 3}O{sub 12}. Therefore, Bi{sub 6}Ti{sub 4}O{sub 17} is predicted to be a low band gap ferroelectric material.

  9. Special purpose modes in photonic band gap fibers

    DOE Patents [OSTI]

    Spencer, James; Noble, Robert; Campbell, Sara

    2013-04-02

    Photonic band gap fibers are described having one or more defects suitable for the acceleration of electrons or other charged particles. Methods and devices are described for exciting special purpose modes in the defects including laser coupling schemes as well as various fiber designs and components for facilitating excitation of desired modes. Results are also presented showing effects on modes due to modes in other defects within the fiber and due to the proximity of defects to the fiber edge. Techniques and devices are described for controlling electrons within the defect(s). Various applications for electrons or other energetic charged particles produced by such photonic band gap fibers are also described.

  10. Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals

    E-Print Network [OSTI]

    Vos, Willem L.

    Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals Tijmen on three-dimensional photonic band gap crystals. Switching the Si inverse opal is achieved by optically

  11. The energy band gap of a semiconductor material critically influences the operating wavelength in an optoelectronic device. Realization of any desired band gap, or even spatially graded band gaps, is important

    E-Print Network [OSTI]

    :00 PM; ERC 490 School for Engineering of Matter, Transport and Energy #12;The energy band gap of a semiconductor material critically influences the operating wavelength for applications such as lasers, light-emitting diodes (LEDs), solar cells, and detectors. New band gaps can

  12. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect PhotovoltaicsStructureInnovation PortalSubstrate-Induced Band-Gap Opening

  13. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect PhotovoltaicsStructureInnovation PortalSubstrate-Induced Band-Gap

  14. Wide-band negative permeability of nonlinear metamaterials

    E-Print Network [OSTI]

    Wide-band negative permeability of nonlinear metamaterials Mikhail Lapine1 , Ilya Shadrivov2 & Yuri frequency range where metamaterial possesses negative effective permeability. This can be achieved by employing a nonlinear response of metamaterials. We demonstrate that, with an appropriate design

  15. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect (OSTI)

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup ?}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1?x}Cd{sub x}Te, and In{sub 1?x}Ga{sub x}As{sub y}P{sub 1?y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  16. Voltage-matched, monolithic, multi-band-gap devices

    DOE Patents [OSTI]

    Wanlass, Mark W.; Mascarenhas, Angelo

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  17. Voltage-Matched, Monolithic, Multi-Band-Gap Devices

    DOE Patents [OSTI]

    Wanlass, M. W.; Mascarenhas, A.

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  18. Wide band focusing x-ray spectrograph with spatial resolution

    SciTech Connect (OSTI)

    Pikuz, S. A.; Douglass, J. D.; Shelkovenko, T. A.; Sinars, D. B.; Hammer, D. A.

    2008-01-15

    A new, wide spectral bandwidth x-ray spectrograph, the wide-bandwidth focusing spectrograph with spatial resolution (WB-FSSR), based on spherically bent mica crystals, is described. The wide bandwidth is achieved by combining three crystals to form a large aperture dispersive element. Since the WB-FSSR covers a wide spectral band, it is very convenient for application as a routine diagnostic tool in experiments in which the desired spectral coverage is different from one test to the next. The WB-FSSR has been tested in imploding wire-array experiments on a 1 MA pulsed power machine, and x-ray spectra were recorded in the 1-20 A spectral band using different orders of mica crystal reflection. Using a two mirror-symmetrically placed WB-FSSR configuration, it was also possible to distinguish between a real spectral shift and a shift of recorded spectral lines caused by the spatial distribution of the radiating plasma. A spectral resolution of about 2000 was demonstrated and a spatial resolution of {approx}100 {mu}m was achieved in the spectral band of 5-10 A in second order of mica reflection. A simple method of numerical analysis of spectrograph capability is proposed.

  19. One-dimensional electromagnetic band gap structures formed by discharge plasmas in a waveguide

    SciTech Connect (OSTI)

    Arkhipenko, V. I.; Simonchik, L. V., E-mail: l.simonchik@dragon.bas-net.by; Usachonak, M. S. [B.I. Stepanov Institute of Physics of the NAS of Belarus, Ave. Nezavisimostsi 68, 220072 Minsk (Belarus); Callegari, Th.; Sokoloff, J. [Université de Toulouse, UPS, INPT, LAPLACE, Laboratoire Plasma et Conversion d'Energie, 118 route de Narbonne, F-31062 Toulouse cedex 9 (France)

    2014-09-28

    We demonstrate the ability to develop one-dimensional electromagnetic band gap structure in X-band waveguide solely by using the positive columns of glow discharges in neon at the middle pressure. Plasma inhomogeneities are distributed uniformly along a typical X-band waveguide with cross section of 23×10 mm². It is shown that electron densities larger than 10¹? cm ?³ are needed in order to create an effective one-dimensional electromagnetic band gap structure. Some applications for using the one-dimensional electromagnetic band gap structure in waveguide as a control of microwave (broadband filter and device for variation of pulse duration) are demonstrated.

  20. Wide band cryogenic ultra-high vacuum microwave absorber

    DOE Patents [OSTI]

    Campisi, Isidoro E. (Newport News, VA)

    1992-01-01

    An absorber wave guide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the wave guide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the wave guide.

  1. Evidence of surface acoustic wave band gaps in the phononic crystals created on thin plates

    E-Print Network [OSTI]

    Deymier, Pierre

    Evidence of surface acoustic wave band gaps in the phononic crystals created on thin plates Xinya acoustic wave SAW band gaps. In this letter, we report a new type of phononic crystals manufactured Institute of Physics. DOI: 10.1063/1.2167794 The propagation of acoustic waves in periodic composite

  2. Light trapping design for low band-gap polymer solar cells

    E-Print Network [OSTI]

    John, Sajeev

    Light trapping design for low band-gap polymer solar cells Stephen Foster1,* and Sajeev John1,2 1 demonstrate numerically a 2-D nanostructured design for light trapping in a low band-gap polymer solar cell, "Light harvesting improvement of organic solar cells with self- enhanced active layer designs," Opt

  3. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal A New Gap-Opening Mechanism in a Triple-Band Metal Print Wednesday, 23 February 2005 00:00 A "wire" of indium only one or a few...

  4. A Class of Supported Membranes: Formation of Fluid Phospholipid Bilayers on Photonic Band Gap Colloidal Crystals

    E-Print Network [OSTI]

    Parikh, Atul N.

    Colloidal Crystals Adrian M. Brozell, Michelle A. Muha, Babak Sanii, and Atul N. Parikh* Department tunable colloidal crystal with a well-defined photonic band gap. Monodisperse colloids (e.g., silica-defined photonic band gap (PBG).6 The ability to couple membranes with colloidal crystals opens useful optical

  5. Substrate-induced band gap opening in epitaxial graphene

    E-Print Network [OSTI]

    2008-01-01

    step to make graphene a semiconductor is to dope grapheneDirac points, graphene is a zero gap semiconductor, and howconventional semiconductors. In single layer graphene, the

  6. Ultra Wide Band RFID Neutron Tags for Nuclear Materials Monitoring

    SciTech Connect (OSTI)

    Nekoogar, F; Dowla, F; Wang, T

    2010-01-27

    Recent advancements in the ultra-wide band Radio Frequency Identification (RFID) technology and solid state pillar type neutron detectors have enabled us to move forward in combining both technologies for advanced neutron monitoring. The LLNL RFID tag is totally passive and will operate indefinitely without the need for batteries. The tag is compact, can be directly mounted on metal, and has high performance in dense and cluttered environments. The LLNL coin-sized pillar solid state neutron detector has achieved a thermal neutron detection efficiency of 20% and neutron/gamma discrimination of 1E5. These performance values are comparable to a fieldable {sup 3}He based detector. In this paper we will discuss features about the two technologies and some potential applications for the advanced safeguarding of nuclear materials.

  7. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore »structural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  8. L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations

    SciTech Connect (OSTI)

    Zanatta, G.; Gottfried, C.; Silva, A. M.; Caetano, E. W. S.; Sales, F. A. M.; Freire, V. N.

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences ?a, ?b, ?c between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z???? and Z???? transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to ?3 ???, ?1 ???, and ?2 ??? transitions, respectively. ?-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical anisotropy for the absorption and complex dielectric function, with more structured curves for incident light polarized along the 100 and 101 directions.

  9. Robust topology optimization of three-dimensional photonic-crystal band-gap structures

    E-Print Network [OSTI]

    Lee, K. Y. K.

    We perform full 3D topology optimization (in which “every voxel” of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, ...

  10. Calculation of wakefields in a 17 GHz beam-driven photonic band-gap accelerator structure

    E-Print Network [OSTI]

    Hu, Min

    We present the theoretical analysis and computer simulation of the wakefields in a 17 GHz photonic band-gap (PBG) structure for accelerator applications. Using the commercial code CST Particle Studio, the fundamental ...

  11. Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices

    DOE Patents [OSTI]

    Brandhorst, Jr., Henry W. (Auburn, AL); Chen, Zheng (Auburn, AL)

    2000-01-01

    Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.

  12. Tunable band gap in graphene with a noncentrosymmetric superlattice potential Rakesh P. Tiwari and D. Stroud

    E-Print Network [OSTI]

    Stroud, David

    superlattice TGS or a square graphene superlattice with broken inversion symmetry, and find that a band gap is created at the original and, in the case of a TGS, the "second generation" Dirac point. This gap, which, a triangular graphene superlattice TGS was considered, and a new class of massless Dirac fermions was predicted

  13. Band gap engineering for graphene by using Na{sup +} ions

    SciTech Connect (OSTI)

    Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W., E-mail: jwc@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

    2014-08-25

    Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E{sub g}) at DP in a controlled way by depositing positively charged Na{sup +} ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na{sup +} ions is found to deplete the ?* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E{sub g}. The band gap increases with increasing Na{sup +} coverage with a maximum E{sub g}?0.70?eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na{sup +} ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na{sup +} ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

  14. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    Heinrich, M P; Zhang, Y; Kiowski, O; Powalla, M; Lemmer, U; Slobodskyy, A

    2010-01-01

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  15. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Srinet, Gunjan Kumar, Ravindra Sajal, Vivek

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  16. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    M. P. Heinrich; Z-H. Zhang; Y. Zhang; O. Kiowski; M. Powalla; U. Lemmer; A. Slobodskyy

    2010-09-20

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  17. Band-gap tailoring of ZnO by means of heavy Al doping

    SciTech Connect (OSTI)

    Sernelius, B.E.; Berggren, K.; Jin, Z.; Hamberg, I.; Granqvist, C.G.

    1988-06-15

    Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

  18. Calculation of band gaps in molecular crystals using hybrid functional theory

    E-Print Network [OSTI]

    Perger, Warren F.

    , pentaerythritol (PE), pentaerythritol tetranitrate (PETN), and cyclotrimethylene trinitramine (RDX). The B3LYP (PETN) , and cyclotrimethylene trinitramine (RDX). Molecular crystals have not been as Preprint, in this case the molecular crystals anthracene, PE, PETN and RDX. In addition to the relevance of the band gap

  19. 2008 IEEE Electrical Performance of Electronic Packaging Suppression of Vertical Coupling using Electromagnetic Band Gap Structures

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    2008 IEEE Electrical Performance of Electronic Packaging Suppression of Vertical Coupling using Electromagnetic Band Gap Structures Nithya Sankaran, Suzanne Huh, Madhavan Swaminathan and Rao Tummala Packaging are presented. I. Introduction Multilayer packaging plays a vital role in producing highly miniaturized, low

  20. Photonic band gap in isotropic hyperuniform disordered solids with low dielectric contrast

    E-Print Network [OSTI]

    Torquato, Salvatore

    , "Photonic amorphous diamond Structure with a 3D photonic band gap," Phys. Rev. Lett. 100(1), 013901 (2008 design) not limited by crystalline symmetries. ©2013 Optical Society of America OCIS codes: (160.0160) Materials; (160.5293) Photonic bandgap materials; (160.5298) Photonic crystals. References and links 1. S

  1. Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys

    SciTech Connect (OSTI)

    Li, Keyan; Kang, Congying [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)] [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Xue, Dongfeng, E-mail: dongfeng@ciac.jl.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China) [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-10-15

    In this work, the bulk moduli and band gaps of M{sub x}Zn{sub 1?x}O (M = Be, Mg, Ca, Cd) alloys in the whole composition range were quantitatively calculated by using the electronegativity-related models for bulk modulus and band gap, respectively. We found that the change trends of bulk modulus and band gap with an increase of M concentration x are same for Be{sub x}Zn{sub 1?x}O and Cd{sub x}Zn{sub 1?x}O, while the change trends are reverse for Mg{sub x}Zn{sub 1?x}O and Ca{sub x}Zn{sub 1?x}O. It was revealed that the bulk modulus is related to the valence electron density of atoms whereas the band gap is strongly influenced by the detailed chemical bonding behaviors of constituent atoms. The current work provides us a useful guide to compositionally design advanced alloy materials with both good mechanical and optoelectronic properties.

  2. Energy Dependence and Scaling Property of Localization Length near a Gapped Flat Band

    E-Print Network [OSTI]

    Ge, Li

    2015-01-01

    Using a tight-binding model for a one-dimensional Lieb lattice, we show that the localization length near a gapped flat band behaves differently from the typical Urbach tail in a band gap: instead of reducing monotonically as the energy E moves away from the flat band energy E_{FB}, the presence of the flat band causes a nonmonotonic energy dependence of the localization length. This energy dependence follows a scaling property when the energy is within the spread (W) of uniformly distributed diagonal disorder, i.e. the localization length is only a function of (E-E_{FB})/W. Several other lattices are compared to distinguish the effect of the flat band on the localization length, where we eliminate, shift, or duplicate the flat band, without changing the dispersion relations of other bands. Using the top right element of the Green's matrix, we derive an analytical relation between the density of states and the localization length, which shines light on these properties of the latter, including a summation rul...

  3. Strain-induced energy band gap opening in two-dimensional bilayered silicon film

    E-Print Network [OSTI]

    Ji, Zhonghang; Voon, Lok C Lew Yan; Zhuang, Yan

    2015-01-01

    This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are optimized by using both the local-density approximation and generalized gradient approximation. In the absence of strain/stress, five buckled hexagonal honeycomb structures of the bilayered silicon film have been obtained as local energy minima and their structural stability has been verified. These structures present a Dirac-cone shaped energy band diagram with zero energy band gaps. Applying tensile biaxial strain leads to a reduction of the buckling height. Atomically flat structures with zero bucking height have been observed when the AA-stacking structures are under a critical biaxial strain. Increase of the strain between 10.7% ~ 15.4% results in a band-gap opening with a maximum energy band gap opening of ~168.0 meV obtained when 14.3% strain is applied. Energy band d...

  4. Photonic band gap of a graphene-embedded quarter-wave stack

    SciTech Connect (OSTI)

    Fan, Yuancheng; Wei, Zeyong; Li, Hongqiang; Chen, Hong; Soukoulis, Costas M

    2013-12-10

    Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive sheet. In a graphene-embedded quarter-wave stack, the synergic actions of Bragg scattering and graphene conductance contributions open photonic gaps at the center of the reduced Brillouin zone that are nonexistent in conventional quarter-wave stacks. Such photonic gaps show giant, loss-independent density of optical states at the fixed lower-gap edges, of even-multiple characteristic frequency of the quarter-wave stack. The conductive sheet-induced photonic gaps provide a platform for the enhancement of light-matter interactions.

  5. Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading to Materials with Advanced Properties for

    E-Print Network [OSTI]

    Nabben, Reinhard

    Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading requires a precise control over electronic properties. Zinc oxide is favorable for large the full inorganic UV protection are made. KEYWORDS: metal oxides, semiconductors, band gap engineering

  6. Band gaps and structural properties of graphene halides and their derivates: A hybrid functional study with localized orbital basis sets

    E-Print Network [OSTI]

    Karlický, František; Otyepka, Michal; 10.1063/1.4736998

    2012-01-01

    DFT calculations of the electronic structure of graphane and stoichiometrically halogenated graphene derivatives (fluorographene and other analogous graphene halides) show (i) localized orbital basis sets can be successfully and effectively used for such 2D materials; (ii) several functionals predict that the band gap of graphane is greater than that of fluorographene, whereas HSE06 gives the opposite trend; (iii) HSE06 functional predicts quite good values of band gaps w.r.t benchmark theoretical and experimental data; (iv) the zero band gap of graphene is opened by hydrogenation and halogenation and strongly depends on the chemical composition of mixed graphene halides; (v) the stability of graphene halides decreases sharply with increasing size of the halogen atom - fluorographene is stable, whereas graphene iodide spontaneously decomposes. In terms of band gap and stability, the C2FBr, and C2HBr derivatives seem to be promising materials, e.g., for (opto)electronics applications, because their band gaps a...

  7. Near-edge band structures and band gaps of Cu-based semiconductors predicted by the modified Becke-Johnson potential plus an on-site Coulomb U

    SciTech Connect (OSTI)

    Zhang, Yubo; Zhang, Jiawei; Wang, Youwei; Gao, Weiwei; Abtew, Tesfaye A.; Zhang, Peihong E-mail: wqzhang@mail.sic.ac.cn; Beijing Computational Science Research Center, Beijing 100084 ; Zhang, Wenqing E-mail: wqzhang@mail.sic.ac.cn; School of Chemistry and Chemical Engineering and Sate Key Laboratory of Coordination Chemistry, Nanjing University, Jiangsu 210093

    2013-11-14

    Diamond-like Cu-based multinary semiconductors are a rich family of materials that hold promise in a wide range of applications. Unfortunately, accurate theoretical understanding of the electronic properties of these materials is hindered by the involvement of Cu d electrons. Density functional theory (DFT) based calculations using the local density approximation or generalized gradient approximation often give qualitative wrong electronic properties of these materials, especially for narrow-gap systems. The modified Becke-Johnson (mBJ) method has been shown to be a promising alternative to more elaborate theory such as the GW approximation for fast materials screening and predictions. However, straightforward applications of the mBJ method to these materials still encounter significant difficulties because of the insufficient treatment of the localized d electrons. We show that combining the promise of mBJ potential and the spirit of the well-established DFT + U method leads to a much improved description of the electronic structures, including the most challenging narrow-gap systems. A survey of the band gaps of about 20 Cu-based semiconductors calculated using the mBJ + U method shows that the results agree with reliable values to within ±0.2 eV.

  8. Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals

    SciTech Connect (OSTI)

    Henry Hao-Chuan Kang

    2004-12-19

    Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

  9. Band gap tuning in transition metal oxides by site-specific substitution

    DOE Patents [OSTI]

    Lee, Ho Nyung; Chisholm, Jr., Matthew F; Jellison, Jr., Gerald Earle; Singh, David J; Choi, Woo Seok

    2013-12-24

    A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected form the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO.sub.3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less of 4.5 eV.

  10. Pre-Stressed Viscoelastic Composites: Effective Incremental Moduli and Band-Gap Tuning

    SciTech Connect (OSTI)

    Parnell, William J. [School of Mathematics, Alan Turing Building, University of Manchester, Manchester, M13 9PL (United Kingdom)

    2010-09-30

    We study viscoelastic wave propagation along pre-stressed nonlinear elastic composite bars. In the pre-stressed state we derive explicit forms for the effective incremental storage and loss moduli with dependence on the pre-stress. We also derive a dispersion relation for the effective wavenumber in the case of arbitrary frequency, hence permitting a study of viscoelastic band-gap tuning via pre-stress.

  11. Engineering of the band gap and optical properties of thin films of yttrium hydride

    SciTech Connect (OSTI)

    You, Chang Chuan; Mongstad, Trygve; Maehlen, Jan Petter; Karazhanov, Smagul, E-mail: smagulk@ife.no [Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway)

    2014-07-21

    Thin films of oxygen-containing yttrium hydride show photochromic effect at room temperature. In this work, we have studied structural and optical properties of the films deposited at different deposition pressures, discovering the possibility of engineering the optical band gap by variation of the oxygen content. In sum, the transparency of the films and the wavelength range of photons triggering the photochromic effect can be controlled by variation of the deposition pressure.

  12. Microwave band gap and cavity mode in spoof-insulator-spoof waveguide with multiscale structured surface

    E-Print Network [OSTI]

    Zhang, Qiang; Han, Dezhuan; Qin, Fei Fei; Zhang, Xiao Ming; Yao, Yong

    2015-01-01

    We propose a multiscale spoof-insulator-spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It is shown that the multiscale SIS possesses microwave band gap (MBG) due to the Bragg scattering. The "gap maps" in the design parameter space are provided. We demonstrate that the geometry of the subcells can efficiently adjust the effective refraction index of the elementary SIS and therefore further control the width and the position of the MBG. The results are in good agreement with numerical calculations by the finite element method (FEM). For finite-sized MSIS of given geometry in the millimeter scale, FEM calculations show that the first-order symmetric SSPP mode has zero transmission in the MBG within frequency...

  13. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1-x alloys

    E-Print Network [OSTI]

    Gong, Xingao

    , most semi- conductor alloys AxB1-x have a nonlinear dependence of its band gap Eg x as a function of the alloy composition x, and the variation is usually described by a parabolic function Eg alloy x = xEg A + 1 - x Eg B - bgx 1 - x , 1 where Eg A and Eg B are the band gaps of A and B at their respective

  14. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  15. Analysis of plasma-magnetic photonic crystal with a tunable band gap

    SciTech Connect (OSTI)

    Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Plasma Research Institute of Tarbiat Moallem University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

    2013-04-15

    In this paper, electromagnetic wave propagation through the one-dimensional plasma-magnetic photonic crystal in the presence of external magnetic field has been analyzed. The dispersion relation, transmission and reflection coefficients have been obtained by using the transfer matrix method. It is investigated how photonic band gap of photonic crystals will be tuned when both dielectric function {epsilon} and magnetic permeability {mu} of the constitutive materials, depend on applied magnetic field. This is shown by one dimensional photonic crystals consisting of plasma and ferrite material layers stacked alternately.

  16. Is it effective to harvest visible light by decreasing the band gap of photocatalytic materials?

    SciTech Connect (OSTI)

    Fu Ning; Tang Xinhu; Li Dongyang [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2G6 (Canada)

    2012-02-27

    In situ variations in the electron work function and photo-current of TiO{sub 2} nanotubes demonstrate that long-wavelength illumination only has a minor effect on the excitation of electrons in the nanotubes after being exposed to short-wavelength light or when the short-wavelength light coexisted, indicating that the solar spectrum may not be utilized as efficiently as expected by extending the absorption spectrum of the photocatalytic material to visible light range with decreased band gaps.

  17. A new generalized KohnSham method for fundamental band-gaps in solids

    E-Print Network [OSTI]

    Baer, Roi

    known to be rigorously correct for the Fermi level.3,4 The fundamental band-gap of the solid, Eg-state energies, Egs, of the N À 1, N and N + 1 electron systems as follows: Eg ¼ IP À EA ¼ lim N!1 EgsðN À 1Þ À 2 particles and can be expressed as follows: Eg = ÀeN,N + eN + 1,N+1 = (eN,N+1 À eN,N) + DXC (1.2) Where e

  18. Photonic band gaps in three-dimensional network structures with short-range order

    SciTech Connect (OSTI)

    Liew, Seng Fatt; Noh, Heeso; Yang, Jin-Kyu; Schreck, Carl F.; Dufresne, Eric R.; O'Hern, Corey S.; Cao, Hui

    2011-12-15

    We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PASs) with short-range order. From calculations of the density of optical states (DOS) for PASs with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PASs, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PASs without long-range order.

  19. Indirect-direct band gap transition through electric tuning in bilayer MoS{sub 2}

    SciTech Connect (OSTI)

    Zhang, Z. Y.; Si, M. S., E-mail: sims@lzu.edu.cn; Wang, Y. H.; Gao, X. P. [Key laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730 000 (China)] [Key laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730 000 (China); Sung, Dongchul; Hong, Suklyun [Graphene Research Institute, Sejong University, Seoul 143 747 (Korea, Republic of)] [Graphene Research Institute, Sejong University, Seoul 143 747 (Korea, Republic of); He, Junjie [Department of Physics, Xiangtan University, Hunan 411 105 (China)] [Department of Physics, Xiangtan University, Hunan 411 105 (China)

    2014-05-07

    We investigate the electronic properties of bilayer MoS{sub 2} exposed to an external electric field by using first-principles calculations. It is found that a larger interlayer distance, referring to that by standard density functional theory (DFT) with respect to that by DFT with empirical dispersion corrections, makes indirect-direct band gap transition possible by electric control. We show that external electric field effectively manipulates the valence band contrast between the K- and ?-valleys by forming built-in electric dipole fields, which realizes an indirect-direct transition before a semiconductor-metal transition happens. Our results provide a novel efficient access to tune the electronic properties of two-dimensional layered materials.

  20. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    SciTech Connect (OSTI)

    Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-08-15

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  1. Effects of surface termination on the band gap of ultrabright Si29 nanoparticles: Experiments and computational models

    E-Print Network [OSTI]

    Braun, Paul

    Effects of surface termination on the band gap of ultrabright Si29 nanoparticles: Experiments constituting a H-terminated reconstructed Si surface was recently proposed as a structural prototype termination with a N linkage in butylamine and O linkage in pentane . The emission band for N-termination

  2. Synchronous Ultra-Wide Band Wireless Sensors Networks for oil and gas exploration

    E-Print Network [OSTI]

    Savazzi, Stefano

    Synchronous Ultra-Wide Band Wireless Sensors Networks for oil and gas exploration Stefano Savazzi1 of new oil and gas reservoir. Seismic exploration requires a large number (500 ÷ 2000 nodes, MAC and network layer to develop wireless sensors networks tailored for oil (and gas) exploration

  3. Periodic dielectric structure for production of photonic band gap and devices incorporating the same

    DOE Patents [OSTI]

    Ho, Kai-Ming (Ames, IA); Chan, Che-Ting (Ames, IA); Soukoulis, Costas (Ames, IA)

    1994-08-02

    A periodic dielectric structure which is capable of producing a photonic band gap and which is capable of practical construction. The periodic structure is formed of a plurality of layers, each layer being formed of a plurality of rods separated by a given spacing. The material of the rods contrasts with the material between the rods to have a refractive index contrast of at least two. The rods in each layer are arranged with their axes parallel and at a given spacing. Adjacent layers are rotated by 90.degree., such that the axes of the rods in any given layer are perpendicular to the axes in its neighbor. Alternating layers (that is, successive layers of rods having their axes parallel such as the first and third layers) are offset such that the rods of one are about at the midpoint between the rods of the other. A four-layer periocity is thus produced, and successive layers are stacked to form a three-dimensional structure which exhibits a photonic band gap. By virtue of forming the device in layers of elongate members, it is found that the device is susceptible of practical construction.

  4. Fluorine Substituted Conjugated Polymer of Medium Band Gap Yields 7% Efficiency in Polymer--Fullerene Solar Cells

    SciTech Connect (OSTI)

    Price, S C; Stuart, Andrew C.; Yang, L; Zhou, H; You, Wei

    2011-01-01

    Recent research advances on conjugated polymers for photovoltaic devices have focused on creating low band gap materials, but a suitable band gap is only one of many performance criteria required for a successful conjugated polymer. This work focuses on the design of two medium band gap (?2.0 eV) copolymers for use in photovoltaic cells which are designed to possess a high hole mobility and low highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels. The resulting fluorinated polymer PBnDT?FTAZ exhibits efficiencies above 7% when blended with [6,6]-phenyl C{sub 61}-butyric acid methyl ester in a typical bulk heterojunction, and efficiencies above 6% are still maintained at an active layer thicknesses of 1 ?m. PBnDT?FTAZ outperforms poly(3-hexylthiophene), the current medium band gap polymer of choice, and thus is a viable candidate for use in highly efficient tandem cells. PBnDT?FTAZ also highlights other performance criteria which contribute to high photovoltaic efficiency, besides a low band gap.

  5. Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).

    SciTech Connect (OSTI)

    Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodgriguez, J.

    2008-03-18

    The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

  6. Photonic-band-gap effects in two-dimensional polycrystalline and amorphous structures

    SciTech Connect (OSTI)

    Yang, Jin-Kyu; Noh, Heeso; Liew, Seng-Fatt; Schreck, Carl; Guy, Mikhael I.; O'Hern, Corey S.; Cao, Hui

    2010-11-15

    We study numerically the density of optical states (DOS) in two-dimensional photonic structures with short-range positional order and observe a transition from polycrystalline to amorphous photonic systems. In polycrystals, photonic band gaps (PBGs) are formed within individual domains, which leads to a depletion of the DOS similar to that in periodic structures. In amorphous photonic media, the domain sizes are too small to form PBGs, thus the depletion of the DOS is weakened significantly. The critical domain size that separates the polycrystalline and amorphous regimes is determined by the attenuation length of Bragg scattering, which depends not only on the degree of positional order but also the refractive-index contrast of the photonic material. Even with relatively low-refractive-index contrast, we find that modest short-range positional order in photonic structures enhances light confinement via collective scattering and interference.

  7. The energy band gap in the excitation spectrum is a fundamental characteristic for a broad array of materials. In the 1980's, the "band-gap" problem in semiconductors, the systematic underestimation of

    E-Print Network [OSTI]

    Braun, Paul

    The energy band gap in the excitation spectrum is a fundamental characteristic for a broad array for the electron self energy. I will outline the basic physical ingredients of the modern many-body perturbation for use in photocatalysis. In particular, I will discuss the application to energy level alignment

  8. Calculation of semiconductor band gaps with the M06-L density functional Yan Zhao and Donald G. Truhlara

    E-Print Network [OSTI]

    Truhlar, Donald G

    .3,6,7 However, the computational cost for HF exchange in solid-state physics calculations is very indirect.24 In this paper we calculate the lowest excitation energy whether direct or in- direct by Eq. 1Calculation of semiconductor band gaps with the M06-L density functional Yan Zhao and Donald G

  9. Photovoltaic devices with low band gap polymers Eva Bundgaarda, Sean Shaheenb, David S. Ginleyb, Frederik C. Krebsa

    E-Print Network [OSTI]

    Photovoltaic devices with low band gap polymers Eva Bundgaarda, Sean Shaheenb, David S. Ginleyb, Colorado, USA Abstract Progress in organic photovoltaic devices has recently resulted in reported temperature, active area of the device and molecular weight of the polymer, on the photovoltaic response

  10. Transmission and dispersion relations of perfect and defect-containing waveguide structures in phononic band gap materials

    E-Print Network [OSTI]

    Deymier, Pierre

    Transmission and dispersion relations of perfect and defect-containing waveguide structures investigate transmission through perfect linear waveguides, waveguides containing a resonant cavity a large frequency range of the band gap by varying the width of the guide. The transmission through

  11. Photonic band gap templating using optical interference lithography Timothy Y. M. Chan, Ovidiu Toader, and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    band gap material-based optical microchip, it is necessary to have high quality, three-dimensional 3D dielectric structure of the PBG material, it is possible to guide light through micron-scale, single-mode air, and replication 11,12 have made this paramount goal a near term reality. The optical properties of PBG materials

  12. Band gap engineering strategy via polarization rotation in perovskite ferroelectrics Fenggong Wang, Ilya Grinberg, and Andrew M. Rappe

    E-Print Network [OSTI]

    Rappe, Andrew M.

    Band gap engineering strategy via polarization rotation in perovskite ferroelectrics Fenggong Wang.1063/1.4804367 Strain sensitivity of polarization in perovskite ferroelectrics Appl. Phys. Lett. 93, 122903 (2008); 10.1063/1.2988263 Domain engineering of the transverse piezoelectric coefficient in perovskite ferroelectrics J. Appl. Phys

  13. Band-gap grading in Cu(In,Ga)Se2 solar cells M. Gloeckler and J. R. Sites

    E-Print Network [OSTI]

    Sites, James R.

    Band-gap grading in Cu(In,Ga)Se2 solar cells M. Gloeckler and J. R. Sites Department of Physics solar cells, and some researchers have asserted that these fields can enhance performance. The experimental evidence that grading improves device performance, however, has not been compelling, mostly

  14. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  15. Generation of color centers by femtosecond laser pulses in wide band gap materials

    E-Print Network [OSTI]

    Dickinson, J. Thomas

    reactions restore a rather large fraction of the transparency lost during irradiation. In the case of soda is easily accomplished. 2. EXPERIMENT Femtosecond laser pulses were produced by a Spectra Physics Hurricane

  16. Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer

    SciTech Connect (OSTI)

    Trifonov, T.; Marsal, L.F.; Pallares, J.; Rodriguez, A.; Alcubilla, R.

    2004-11-15

    We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb lattices in both complementary arrangements, i.e., air rods drilled in silicon matrix and silicon rods in air, are studied. We consider that the rods are formed of a dielectric core (silicon or air) surrounded by a cladding layer of silicon dioxide (SiO{sub 2}), silicon nitride (Si{sub 3}N{sub 4}), or germanium (Ge). Such photonic lattices present absolute photonic band gaps, and we study the evolution of these gaps as functions of the cladding material and thickness. Our results show that in the case of air rods in dielectric media the existence of dielectric cladding reduces the absolute gap width and may cause complete closure of the gap if thick layers are considered. For the case of dielectric rods in air, however, the existence of a cladding layer can be advantageous and larger absolute PBG's can be achieved.

  17. Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

    SciTech Connect (OSTI)

    Nie, D.; Mei, T.; Xu, C. D.; Dong, J. R.

    2006-09-25

    Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.

  18. The change in dielectric constant, AC conductivity and optical band gaps of polymer electrolyte film: Gamma irradiation

    SciTech Connect (OSTI)

    Raghu, S., E-mail: dehu2010@gmail.com; Subramanya, K., E-mail: dehu2010@gmail.com; Sharanappa, C., E-mail: dehu2010@gmail.com; Mini, V., E-mail: dehu2010@gmail.com; Archana, K., E-mail: dehu2010@gmail.com; Sanjeev, Ganesh, E-mail: dehu2010@gmail.com; Devendrappa, H., E-mail: dehu2010@gmail.com [Dept. of Physics, Mangalore University, Mangalagangothri-574199 (India)

    2014-04-24

    The effects of gamma (?) irradiation on dielectric and optical properties of polymer electrolyte film were investigated. The dielectric constant and ac conductivity increases with ? dose. Also optical band gap decreased from 4.23 to 3.78ev after irradiation. A large dependence of the polymer properties on the irradiation dose was noticed. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.

  19. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

    2015-06-18

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine abovemore »the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.« less

  20. Nonlinear sub-cyclotron resonance as a formation mechanism for gaps in banded chorus

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Xiangrong; Guo, Zehua; Dong, Chuanfei; Gary, S. Peter

    2015-05-14

    An interesting characteristic of magnetospheric chorus is the presence of a frequency gap at ? ? 0.5?e, where ?e is the electron cyclotron angular frequency. Recent chorus observations sometimes show additional gaps near 0.3?e and 0.6?e. Here we present a novel nonlinear mechanism for the formation of these gaps using Hamiltonian theory and test particle simulations in a homogeneous, magnetized, collisionless plasma. We find that an oblique whistler wave with frequency at a fraction of the electron cyclotron frequency can resonate with electrons, leading to effective energy exchange between the wave and particles.

  1. Channelization architecture for wide-band slow light in atomic vapors

    E-Print Network [OSTI]

    Zachary Dutton; Mark Bashkansky; Michael Steiner; John Reintjes

    2005-10-20

    We propose a ``channelization'' architecture to achieve wide-band electromagnetically induced transparency (EIT) and ultra-slow light propagation in atomic Rb-87 vapors. EIT and slow light are achieved by shining a strong, resonant ``pump'' laser on the atomic medium, which allows slow and unattenuated propagation of a weaker ``signal'' beam, but only when a two-photon resonance condition is satisfied. Our wideband architecture is accomplished by dispersing a wideband signal spatially, transverse to the propagation direction, prior to entering the atomic cell. When particular Zeeman sub-levels are used in the EIT system, then one can introduce a magnetic field with a linear gradient such that the two-photon resonance condition is satisfied for each individual frequency component. Because slow light is a group velocity effect, utilizing differential phase shifts across the spectrum of a light pulse, one must then introduce a slight mismatch from perfect resonance to induce a delay. We present a model which accounts for diffusion of the atoms in the varying magnetic field as well as interaction with levels outside the ideal three-level system on which EIT is based. We find the maximum delay-bandwidth product decreases with bandwidth, and that delay-bandwidth product ~1 should be achievable with bandwidth ~50 MHz (~5 ns delay). This is a large improvement over the ~1 MHz bandwidths in conventional slow light systems and could be of use in signal processing applications.

  2. Synthesis, Structure, Thermoelectric Properties, and Band Gaps of Alkali Metal Containing Type I Clathrates: A8Ga8Si38 (A = K, Rb, Cs)

    E-Print Network [OSTI]

    Osterloh, Frank

    Synthesis, Structure, Thermoelectric Properties, and Band Gaps of Alkali Metal Containing Type I were consolidated by Spark Plasma Sintering (SPS) for thermoelectric property characterization. INTRODUCTION Thermoelectric materials have been intensively studied over the past decades as they can recycle

  3. Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1?x?y}Si{sub x}Sn{sub y} ternary alloys

    SciTech Connect (OSTI)

    Attiaoui, Anis; Moutanabbir, Oussama [Department of Engineering Physics, École Polytechnique de Montréal, Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7 (Canada)

    2014-08-14

    Sn-containing group IV semiconductors create the possibility to independently control strain and band gap thus providing a wealth of opportunities to develop an entirely new class of low dimensional systems, heterostructures, and silicon-compatible electronic and optoelectronic devices. With this perspective, this work presents a detailed investigation of the band structure of strained and relaxed Ge{sub 1?x?y}Si{sub x}Sn{sub y} ternary alloys using a semi-empirical second nearest neighbors tight binding method. This method is based on an accurate evaluation of the deformation potential constants of Ge, Si, and ?-Sn using a stochastic Monte-Carlo approach as well as a gradient based optimization method. Moreover, a new and efficient differential evolution approach is also developed to accurately reproduce the experimental effective masses and band gaps. Based on this, we elucidated the influence of lattice disorder, strain, and composition on Ge{sub 1?x?y}Si{sub x}Sn{sub y} band gap energy and directness. For 0???x???0.4 and 0???y???0.2, we found that tensile strain lowers the critical content of Sn needed to achieve a direct band gap semiconductor with the corresponding band gap energies below 0.76?eV. This upper limit decreases to 0.43?eV for direct gap, fully relaxed ternary alloys. The obtained transition to direct band gap is given by y?>?0.605?×?x?+?0.077 and y?>?1.364?×?x?+?0.107 for epitaxially strained and fully relaxed alloys, respectively. The effects of strain, at a fixed composition, on band gap directness were also investigated and discussed.

  4. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO); Friedman, Daniel J. (Lakewood, CO)

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  5. Photonic band gap formation in certain self-organizing systems Kurt Busch and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    7 April 1998 We present a detailed study of photonic band structure in certain self frequency are attainable by incom- plete infiltration of an opal with silicon and germanium, respectively are evaluated. We delineate how the PBG is modified by sintering the opal prior to infiltration and by applying

  6. Photonic band gap formation in certain selforganizing systems Kurt Busch and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    ~Received 7 April 1998! We present a detailed study of photonic band structure in certain self frequency are attainable by incom­ plete infiltration of an opal with silicon and germanium, respectively are evaluated. We delineate how the PBG is modified by sintering the opal prior to infiltration and by applying

  7. First-principles study of band gap engineering via oxygen vacancy doping in perovskite ABB'O? solid solutions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qi, Tingting; Curnan, Matthew T.; Kim, Seungchul; Bennett, Joseph W.; Grinberg, Ilya; Rappe, Andrew M.

    2011-12-15

    Oxygen vacancies in perovskite oxide solid solutions are fundamentally interesting and technologically important. However, experimental characterization of the vacancy locations and their impact on electronic structure is challenging. We have carried out first-principles calculations on two Zr-modified solid solutions, Pb(Zn1/3Nb2/3)O? and Pb(Mg1/3Nb2/3)O?, in which vacancies are present. We find that the vacancies are more likely to reside between low-valent cation-cation pairs than high-valent cation-cation pairs. Based on the analysis of our results, we formulate guidelines that can be used to predict the location of oxygen vacancies in perovskite solid solutions. Our results show that vacancies can have a significant impactmore »on both the conduction and valence band energies, in some cases lowering the band gap by ?0.5 eV. The effects of vacancies on the electronic band structure can be understood within the framework of crystal field theory.« less

  8. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.TheoryTuesday, August 10, 20102016 News BelowAsked toUSC-Aiken,A New Gap-Opening

  9. Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt

    SciTech Connect (OSTI)

    Chapi, Sharanappa, E-mail: dehu2010@gmail.com; Raghu, S., E-mail: dehu2010@gmail.com; Subramanya, K., E-mail: dehu2010@gmail.com; Archana, K., E-mail: dehu2010@gmail.com; Mini, V., E-mail: dehu2010@gmail.com; Devendrappa, H., E-mail: dehu2010@gmail.com [Dept. of Physics, Mangalore University, Mangalagangothri-574199 (India)

    2014-04-24

    The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

  10. Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001

    SciTech Connect (OSTI)

    Rockett, A.

    2003-07-01

    The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices, basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices, and practical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(In,Ga)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team, of which, through this contract, we were a member. Solar cells produced from resulting single-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown, a major focus of the project concerned the nature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs, which formed a basis for much of the work ultimately conducted under the program.

  11. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect (OSTI)

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  12. Experimental and theoretical studies of band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells

    SciTech Connect (OSTI)

    Kudrawiec, R. Kopaczek, J.; Polak, M. P.; Scharoch, P.; Gladysiewicz, M.; Misiewicz, J.; Richards, R. D.; Bastiman, F.; David, J. P. R.

    2014-12-21

    Band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs{sub 1?x}Bi{sub x}/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52?±?5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs{sub 1?x}Bi{sub x} with 0?band shifts lineary at a rate of ?33?meV per % Bi, which only slightly decreases with Bi concentration. Whereas the valance band shift is clearly non-linear. Reducing initially at a rate of ?51?meV per % Bi for low concentrations of Bi and then at a significantly reduced rate of ?20?meV per % Bi near the end of the studied composition range. The overall reduction rate of the band gap is parabolic and the reduction rates change from ?84 to ?53?meV per % Bi for lower and higher Bi concentrations, respectively. The calculated shifts of valence and conduction bands give the variation of valence (conduction) band offset between GaAs{sub 1?x}Bi{sub x} and GaAs in the range of ?60%–40% (?40%–60%), which is in good agreement with our conclusion derived from PR measurements.

  13. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  14. High-quality photonic crystals with a nearly complete band gap obtained by direct inversion of woodpile templates with titanium dioxide

    E-Print Network [OSTI]

    Marichy, Catherine; Froufe-Pérez, Luis S; Scheffold, Frank

    2015-01-01

    Photonic crystal materials are based on a periodic modulation of the dielectric constant on length scales comparable to the wavelength of light. These materials can exhibit photonic band gaps; frequency regions for which the propagation of electromagnetic radiation is forbidden due to the depletion of the density of states. In order to exhibit a full band gap, 3D PCs must present a threshold refractive index contrast that depends on the crystal structure. In the case of the so-called woodpile photonic crystals this threshold is comparably low, approximately 1.9 for the direct structure. Therefore direct or inverted woodpiles made of high refractive index materials like silicon, germanium or titanium dioxide are sought after. Here we show that, by combining multiphoton lithography and atomic layer deposition, we can achieve a direct inversion of polymer templates into TiO$_{2}$ based photonic crystals. The obtained structures show remarkable optical properties in the near-infrared region with almost perfect sp...

  15. Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    an alternative InP- based approach for a triple junction solar cell formed by a combination of InAlAs 1.47 eV /In-free InxAl1-xAs alloyed layers were used to fabricate the single junction solar cell. PhotoluminescenceGaAs triple junction cells with efficiencies higher than 30% under 1-sun illumination.7 Additionally

  16. Structure and red shift of optical band gap in CdO–ZnO nanocomposite synthesized by the sol gel method

    SciTech Connect (OSTI)

    Mosquera, Edgar, E-mail: edemova@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile); Pozo, Ignacio del, E-mail: ignacio.dpf@gmail.com [Facultad de Ciencias Naturales, Matemáticas y del Medio Ambiente, Universidad Tecnológica Metropolitana, Av. José Pedro Alessandri 1242, Santiago (Chile); Morel, Mauricio, E-mail: mmorel@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile)

    2013-10-15

    The structure and the optical band gap of CdO–ZnO nanocomposites were studied. Characterization using X-ray diffraction (XRD), transmission electron microscopy (TEM) and diffuse reflectance spectroscopy (DRS) analysis confirms that CdO phase is present in the nanocomposites. TEM analysis confirms the formation of spheroidal nanoparticles and nanorods. The particle size was calculated from Debey–Sherrer?s formula and corroborated by TEM images. FTIR spectroscopy shows residual organic materials (aromatic/Olefinic carbon) from nanocomposites surface. CdO content was modified in the nanocomposites in function of polyvinylalcohol (PVA) added. The optical band gap is found to be red shift from 3.21 eV to 3.11 eV with the increase of CdO content. Photoluminescence (PL) measurements reveal the existence of defects in the synthesized CdO–ZnO nanocomposites. - Graphical abstract: Optical properties of ZnO, CdO and ZnO/CdO nanoparticles. Display Omitted - Highlights: • TEM analysis confirms the presence of spherical nanoparticles and nanorods. • The CdO phase is present in the nanocomposites. • The band gap of the CdO–ZnO nanocomposites is slightly red shift with CdO content. • PL emission of CdO–ZnO nanocomposite are associated to structural defects.

  17. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  18. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  19. 480 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 5, MAY 2000 Coupled Structure for Wide-Band EDFA with Gain

    E-Print Network [OSTI]

    Park, Namkyoo

    of over 2.6 dB and 0.6 dB, respectively, at 3 5 dBm of L-band input signal power. Spatially resolvedB and 0.6 dB, respectively, at dBm L-EDFA input signal) in ad- dition to the limiting amplifier behavior-band injection source in the evolution dynamics of the pri- mary pump, L-EDFA backward ASE, C-band injection

  20. Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO

    SciTech Connect (OSTI)

    Goto, Yosuke, E-mail: ygoto@z8.keio.jp; Tanaki, Mai; Okusa, Yuki; Matoba, Masanori; Kamihara, Yoichi [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan); Shibuya, Taizo; Yasuoka, Kenji [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Yokohama 223-8522 (Japan)

    2014-07-14

    Layered oxysulfide LaCu{sub 1?x}SO (x?=?0–0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ?10{sup 5} ?·cm to ?10{sup ?1} ?·cm as a result of Cu deficiency (x?=?0.01) at 300?K. Thermal conductivity of the samples at 300?K, which is dominated by lattice components, is estimated to be 2.3(3) Wm{sup ?1}K{sup ?1}. Stoichiometric LaCuSO has an optical band gap of 3.1?eV, while broad optical absorption at photon energies of approximately 2.1?eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

  1. Solar Energy Materials & Solar Cells 91 (2007) 15991610 Improving solar cell efficiency using photonic band-gap materials

    E-Print Network [OSTI]

    Dowling, Jonathan P.

    2007-01-01

    efficiency of solar cell devices without using concentrators. r 2007 Elsevier B.V. All rights reserved) solar energy conversion systems (or solar cells) are the most widely used power systems. HoweverSolar Energy Materials & Solar Cells 91 (2007) 1599­1610 Improving solar cell efficiency using

  2. Resonant charge transfer of hydrogen Rydberg atoms incident at a Cu(100) projected band-gap surface

    E-Print Network [OSTI]

    Gibbard, J A; Kohlhoff, M; Rennick, C J; So, E; Ford, M; Softley, T P

    2015-01-01

    The charge transfer (ionization) of hydrogen Rydberg atoms (principal quantum number $n=25-34$) incident at a Cu(100) surface is investigated. Unlike fully metallic surfaces, where the Rydberg electron energy is degenerate with the conduction band of the metal, the Cu(100) surface has a projected bandgap at these energies, and only discrete image states are available through which charge transfer can take place. Resonant enhancement of charge transfer is observed at hydrogen principal quantum numbers for which the Rydberg energy matches the energy of one of the image states. The integrated surface ionization signals show clear periodicity as the energies of states with increasing $n$ come in and out of resonance with the image states. The velocity dependence of the surface ionization dynamics is also investigated. Decreased velocity of the incident H atom leads to a greater mean distance of ionization and a lower field required to extract the ion. The surface-ionization profiles (signal versus applied field) ...

  3. Hybrid density functional calculations of the band gap of GaxIn1-xN Xifan Wu,1 Eric J. Walter,2 Andrew M. Rappe,3 Roberto Car,1 and Annabella Selloni1

    E-Print Network [OSTI]

    Rappe, Andrew M.

    Hybrid density functional calculations of the band gap of GaxIn1-xN Xifan Wu,1 Eric J. Walter,2 Andrew M. Rappe,3 Roberto Car,1 and Annabella Selloni1 1Chemistry Department, Princeton University Recent theoretical work has provided evidence that hybrid functionals, which include a fraction of exact

  4. Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO3 Thin Films

    SciTech Connect (OSTI)

    Comes, Ryan B.; Sushko, Petr; Heald, Steve M.; Colby, Robert J.; Bowden, Mark E.; Chambers, Scott A.

    2014-12-03

    We show that by co-doping SrTiO3 (STO) epitaxial thin films with equal amounts of La and Cr it is possible to produce films with an optical band gap ~0.9 eV lower than that of undoped STO. Sr1-xLaxTi1-xCrxO3 thin films were deposited by molecular beam epitaxy and characterized using x-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy to show that the Cr dopants are almost exclusively in the Cr3+ oxidation state. Extended x-ray absorption fine structure measurements and theoretical modeling suggest that it is thermodynamically preferred for La and Cr dopants to occupy nearest neighbor A- and B-sites in the lattice. Transport measurements show that the material exhibits variable-range hopping conductivity with high resistivity. These results create new opportunities for the use of doped STO films in photovoltaic and photocatalytic applications.

  5. CARS: the CFHTLS-Archive-Research Survey; I. Five-band multi-colour data from 37 sq. deg. CFHTLS-Wide observations

    E-Print Network [OSTI]

    T. Erben; H. Hildebrandt; M. Lerchster; P. Hudelot; J. Benjamin; L. van Waerbeke; T. Schrabback; F. Brimioulle; O. Cordes; J. P. Dietrich; K. Holhjem; M. Schirmer; P. Schneider

    2008-11-13

    We present the CFHTLS-Archive-Research Survey (CARS). It is a virtual multi-colour survey based on public archive images from the CFHT-Legacy-Survey. Our main scientific interests in CARS are optical searches for galaxy clusters from low to high redshift and their subsequent study with photometric and weak-gravitational lensing techniques. As a first step of the project we present multi-colour catalogues from 37 sq. degrees of the CFHTLS-Wide component. Our aims are to create astrometrically and photometrically well calibrated co-added images. Second goal are five-band (u*, g', r', i', z') multi-band catalogues with an emphasis on reliable estimates for object colours. These are subsequently used for photometric redshift estimates. The article explains in detail data processing, multi-colour catalogue creation and photometric redshift estimation. Furthermore we apply a novel technique, based on studies of the angular galaxy cross-correlation function, to quantify the reliability of photo-z's. The accuracy of our high-confidence photo-z sample (10-15 galaxies per sq. arcmin) is estimated to $\\sigma_{\\Delta_z/(1+z)}\\approx 0.04-0.05$ up to i'<24 with typically only 1-3% outliers. Interested users can obtain access to our data by request to the authors.

  6. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?°C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  7. Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO{sub 3}]{sub 1?x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3??}]{sub x} ferroelectrics

    SciTech Connect (OSTI)

    Zhou, Wenliang; Yang, Pingxiong Chu, Junhao; Deng, Hongmei

    2014-09-15

    Structural phase transition, narrow band gap (E{sub g}), and room-temperature ferromagnetism (RTFM) have been observed in the [KNbO{sub 3}]{sub 1?x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3??}]{sub x} (KBNNO) ceramics. All the samples have single phase perovskite structure, but exhibit a gradual transition behaviour from the orthorhombic to a cubic structure with the increase of x. Raman spectroscopy analysis not only corroborates this doping-induced change in normal structure but also shows the local crystal symmetry for x ? 0.1 compositions to deviate from the idealized cubic perovskite structure. A possible mechanism for the observed specific changes in lattice structure is discussed. Moreover, it is noted that KBNNO with compositions x?=?0.1–0.3 have quite narrow E{sub g} of below 1.5?eV, much smaller than the 3.2?eV band gap of parent KNbO{sub 3} (KNO), which is due to the increasing Ni 3d electronic states within the gap of KNO. Furthermore, the KBNNO materials present RTFM near a tetragonal to cubic phase boundary. With increasing x from 0 to 0.3, the magnetism of the samples develops from diamagnetism to ferromagnetism and paramagnetism, originating from the ferromagnetic–antiferromagnetic competition. These results are helpful in the deeper understanding of phase transitions, band gap tunability, and magnetism variations in perovskite oxides and show the potential role, such materials can play, in perovskite solar cells and multiferroic applications.

  8. PHYSICAL REVIEW B 91, 245202 (2015) Improved predictions of the physical properties of Zn-and Cd-based wide band-gap

    E-Print Network [OSTI]

    Curtarolo, Stefano

    2015-01-01

    Department of Physics, Central Michigan University, Mt. Pleasant, Michigan 48859, USA 2 Center for Materials scrutiny for their potential applications in spintronics, optoelectronics, and photovoltaics [1

  9. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    SciTech Connect (OSTI)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.

  10. Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang,1,2,* Bing Huang,2

    E-Print Network [OSTI]

    Gong, Xingao

    silicon (Si) is the leading material in the current solar cell market. However, diamond Si is an indirect phase with quasidirect gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date

  11. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 6, JUNE 2003 1705 Cryogenic Wide-Band Ultra-Low-Noise IF

    E-Print Network [OSTI]

    -Band Ultra-Low-Noise IF Amplifiers Operating at Ultra-Low DC Power Niklas Wadefalk, Anders Mellberg, Iltcho Identifier 10.1109/TMTT.2003.812570 ultra-low-noise and ultra-low dc power dissipation are of interest--This paper describes cryogenic broad-band ampli- fiers with very low power consumption and very low noise

  12. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore »can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  13. Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1998-06-01

    We predict that the difference in quantum confinement energies of {Gamma} -like and X -like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the {open_quotes}anticrossing gap{close_quotes} could thus be used to obtain unique information on the {Gamma}-X- L intervalley coupling, predicted here to be surprisingly large (50{endash}100thinspthinspmeV). {copyright} {ital 1998} {ital The American Physical Society}

  14. Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO{sub 2} composites in the 1.3-1.6 {mu}m spectral range

    SciTech Connect (OSTI)

    Pevtsov, A. B. Grudinkin, S. A.; Poddubny, A. N.; Kaplan, S. F.; Kurdyukov, D. A.; Golubev, V. G.

    2010-12-15

    The parameters of three-dimensional photonic crystals based on opal-VO{sub 2} composite films in the 1.3-1.6 {mu}m spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25-0.6) wherein the composite exhibits the properties of a three-dimensional insulator photonic crystal. On the basis of the opal-VO{sub 2} composites, three-dimensional photonic film crystals are synthesized with specified parameters that provide a maximum shift of the photonic band gap in the vicinity of the wavelength {approx}1.5 {mu}m ({approx}170 meV) at the semiconductor-metal transition in VO{sub 2}.

  15. Domain walls in gapped graphene

    E-Print Network [OSTI]

    Semenoff, G W; Zhou, Fei

    2015-01-01

    The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.

  16. Domain walls in gapped graphene

    E-Print Network [OSTI]

    G. W. Semenoff; V. Semenoff; Fei Zhou

    2008-05-31

    The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.

  17. Band anticrossing in dilute nitrides

    SciTech Connect (OSTI)

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  18. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

    1994-04-05

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figures.

  19. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, Alan W. (San Jose, CA); Gonzales, Aaron A. (San Jose, CA); Patel, Mahadeo R. (San Jose, CA); Olich, Eugene E. (Aptos, CA)

    1994-01-01

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups.

  20. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, Alan W. (San Jose, CA); Gonzales, Aaron A. (San Jose, CA); Patel, Mahadeo R. (San Jose, CA); Olich, Eugene E. (Aptos, CA)

    1996-01-01

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups.

  1. Utility-Scale Solar Power Converter: Agile Direct Grid Connect Medium Voltage 4.7-13.8 kV Power Converter for PV Applications Utilizing Wide Band Gap Devices

    SciTech Connect (OSTI)

    2012-01-25

    Solar ADEPT Project: Satcon is developing a compact, lightweight power conversion device that is capable of taking utility-scale solar power and outputting it directly into the electric utility grid at distribution voltage levels—eliminating the need for large transformers. Transformers “step up” the voltage of the power that is generated by a solar power system so it can be efficiently transported through transmission lines and eventually “stepped down” to usable voltages before it enters homes and businesses. Power companies step up the voltage because less electricity is lost along transmission lines when the voltage is high and current is low. Satcon’s new power conversion devices will eliminate these heavy transformers and connect a utility-scale solar power system directly to the grid. Satcon’s modular devices are designed to ensure reliability—if one device fails it can be bypassed and the system can continue to run.

  2. Low resistance ohmic contacts on wide band-gap GaN M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. MorkoG

    E-Print Network [OSTI]

    Allen, Leslie H.

    -beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 "C as high temperature/high power electrical devices, there still remains much more work to be done on GaN epilayers, Foresi et aL6 used Al and Au contacts with 575 "C anneal cycle. However, the specific

  3. Wide bandgap OPV polymers based on pyridinonedithiophene unit with efficiency >5%

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schneider, Alexander M.; Lu, Luyao; Manley, Eric F.; Zheng, Tianyue; Sharapov, Valerii; Xu, Tao; Marks, Tobin J.; Chen, Lin X.; Yu, Luping

    2015-06-04

    We report the properties of a new series of wide band gap photovoltaic polymers based on the N-alkyl 2-pyridone dithiophene (PDT) unit. These polymers are effective bulk heterojunction solar cell materials when blended with phenyl-C71-butyric acid methyl ester (PC71BM). They achieve power conversion efficiencies (up to 5.33%) high for polymers having such large bandgaps, ca. 2.0 eV (optical) and 2.5 eV (electrochemical). As a result, grazing incidence wide-angle X-ray scattering (GIWAXS) reveals strong correlations between ?–? stacking distance and regularity, polymer backbone planarity, optical absorption maximum energy, and photovoltaic efficiency.

  4. Below gap optical absorption in GaAs driven by intense, single-cycle coherent transition radiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Goodfellow, J.; Fuchs, M.; Daranciang, D.; Ghimire, S.; Chen, F.; Loos, H.; Reis, D. A.; Fisher, A. S.; Lindenberg, A. M.

    2014-01-01

    Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven light-matter interactions anticipated at accelerator-based sources.

  5. To Bridge LEDs' Green Gap, Scientists Think Small

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    To Bridge LEDs' Green Gap, Scientists Think Small To Bridge LEDs' Green Gap, Scientists Think Small Nanostructures Half a DNA Strand-Wide Show Promise for Efficient LEDs April 4,...

  6. Development of Low Energy Gap and Fully Regioregular Polythienylenevin...

    Office of Scientific and Technical Information (OSTI)

    Low energy gap and fully regioregular conjugated polymers find its wide use in solar energy conversion applications. This paper will first briefly review this type of...

  7. Refractive Indices of Semiconductors from Energy gaps

    E-Print Network [OSTI]

    Tripathy, S K

    2015-01-01

    An empirical relation based on energy gap and refractive index data has been proposed in the present study to calculate the refractive index of semiconductors. The proposed model is then applied to binary as well as ternary semiconductors for a wide range of energy gap. Using the relation, dielectric constants of some III-V group semiconductors are calculated. The calculated values for different group of binary semiconductors, alkali halides and ternary semiconductors fairly agree with other calculations and known values over a wide range of energy gap. The temperature variation of refractive index for some binary semiconductors have been calculated.

  8. Refractive Indices of Semiconductors from Energy gaps

    E-Print Network [OSTI]

    S. K. Tripathy

    2015-07-16

    An empirical relation based on energy gap and refractive index data has been proposed in the present study to calculate the refractive index of semiconductors. The proposed model is then applied to binary as well as ternary semiconductors for a wide range of energy gap. Using the relation, dielectric constants of some III-V group semiconductors are calculated. The calculated values for different group of binary semiconductors, alkali halides and ternary semiconductors fairly agree with other calculations and known values over a wide range of energy gap. The temperature variation of refractive index for some binary semiconductors have been calculated.

  9. Red band needle blight is an economically important disease affecting a number of coniferous trees, in particular pines. The disease has a world-wide distribution but until recently it was mainly of concern in the southern

    E-Print Network [OSTI]

    , in particular pines. The disease has a world-wide distribution but until recently it was mainly of concern. The three main pine species grown in Britain are Corsican pine, lodgepole pine (Pinus contorta var is the main conifer spe

  10. First principles investigation of scaling trends of zirconium silicate interface band offsets

    E-Print Network [OSTI]

    Dutton, Robert W.

    First principles investigation of scaling trends of zirconium silicate interface band offsets out to investigate the scaling trends of band offsets at model silicon/zirconium silicate interfaces. Owing to the d character of zirconium silicate conduction bands, the band gap and band offset are shown

  11. Localization of metal-induced gap states at the metal-insulator interface: Origin of flux noise in SQUIDs and superconducting qubits

    E-Print Network [OSTI]

    Choi, SangKook

    2010-01-01

    density of states. (b) Metal-induced gap states (MIGS) at athe band gap are extended in the metal and evanescent in theLocalization of Metal-Induced Gap States at the Metal-

  12. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    SciTech Connect (OSTI)

    Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  13. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  14. Linear Scaling of the Exciton Binding Energy versus the Band...

    Office of Scientific and Technical Information (OSTI)

    Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials This content will become publicly available on August 6, 2016 Prev Next Title:...

  15. Characterization of Novel Semiconductor Alloys for Band Gap Engineering

    E-Print Network [OSTI]

    Broesler, Robert Joseph

    2010-01-01

    et al. High Efficiency InAlN-based solar cells. in PVSC '08.for low-cost and high-efficiency solar cells and efficientyielded the record for solar cell efficiency without lattice

  16. Controlling the band gap energy of cluster-assembled materials

    E-Print Network [OSTI]

    2013-01-01

    Biochemistry and Materials Science & Engineering, UniversityBiochemistry and of Materials Science & Engineering at the

  17. Systematic study of photoluminescence upon band gap excitation...

    Office of Scientific and Technical Information (OSTI)

    sub 12Nasub 12TiOsub 3:Pr (RLa, Gd, Lu, and Y) were synthesized, and their structures, optical absorption and luminescent properties were investigated, and the...

  18. Systematic approach for simultaneously correcting the band-gap...

    Office of Scientific and Technical Information (OSTI)

    Number: Army W911NF-10-1-0524; AC02-05CH11231 Type: Publisher's Accepted Manuscript Journal Name: Physical Review. B, Condensed Matter and Materials Physics Additional Journal...

  19. Characterization of Novel Semiconductor Alloys for Band Gap Engineering

    E-Print Network [OSTI]

    Broesler, Robert Joseph

    2010-01-01

    xAsx Alloys for Multi-junction Solar Cells. in PVSC '10.for single and multi-junction solar cells along with thematerial system multi-junction solar cell [12]. High quality

  20. Characterization of Novel Semiconductor Alloys for Band Gap Engineering

    E-Print Network [OSTI]

    Broesler, Robert Joseph

    2010-01-01

    of Semiconductors: Physics and Materials Properties. 1999,in Properties of Advanced Semiconductor Materials GaN, AlN,Semiconductor Alloys: InAlN, ZnSeO and GaNAs 2 Materials Properties

  1. A 250 GHz photonic band gap gyrotron amplifier

    E-Print Network [OSTI]

    Nanni, Emilio A. (Emilio Alessandro)

    2013-01-01

    This thesis reports the theoretical and experimental investigation of a novel gyrotron traveling-wave-tube (TWT) amplifier at 250 GHz. The gyrotron amplifier designed and tested in this thesis has achieved a peak small ...

  2. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation

  3. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect PhotovoltaicsStructureInnovation Portal

  4. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect PhotovoltaicsStructureInnovation PortalSubstrate-Induced

  5. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect PhotovoltaicsStructureInnovation PortalSubstrate-InducedSubstrate-Induced

  6. Direct band gap electroluminescence from bulk germanium at room temperature

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing BacteriaConnectlaser-solidSwitchgrass|FeTe0.55Se0.45 (Journal Article)using an

  7. Systematic study of photoluminescence upon band gap excitation in

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail. (Conference)Feedback System inStatusandArticle)SystemSystem for(Technical

  8. Method for Creating Photonic Band Gap Materials - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter ByMentor-ProtegeFromGasInnovation

  9. Study of transmission line attenuation in broad band millimeter wave frequency range

    SciTech Connect (OSTI)

    Pandya, Hitesh Kumar B.; Austin, M. E.; Ellis, R. F.

    2013-10-15

    Broad band millimeter wave transmission lines are used in fusion plasma diagnostics such as electron cyclotron emission (ECE), electron cyclotron absorption, reflectometry and interferometry systems. In particular, the ECE diagnostic for ITER will require efficient transmission over an ultra wide band, 100 to 1000 GHz. A circular corrugated waveguide transmission line is a prospective candidate to transmit such wide band with low attenuation. To evaluate this system, experiments of transmission line attenuation were performed and compared with theoretical loss calculations. A millimeter wave Michelson interferometer and a liquid nitrogen black body source are used to perform all the experiments. Atmospheric water vapor lines and continuum absorption within this band are reported. Ohmic attenuation in corrugated waveguide is very low; however, there is Bragg scattering and higher order mode conversion that can cause significant attenuation in this transmission line. The attenuation due to miter bends, gaps, joints, and curvature are estimated. The measured attenuation of 15 m length with seven miter bends and eighteen joints is 1 dB at low frequency (300 GHz) and 10 dB at high frequency (900 GHz), respectively.

  10. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, David A. (Walnut Creek, CA); Flood, William S. (Berkeley, CA); Arthur, Allan A. (Martinez, CA); Voelker, Ferdinand (Orinda, CA)

    1986-01-01

    A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

  11. Bridging conduction and radiation : investigating thermal transport in nanoscale gaps

    E-Print Network [OSTI]

    Chiloyan, Vazrik

    2015-01-01

    Near field radiation transfer between objects separated by small gaps is a widely studied field in heat transfer and has become more important than ever. Many technologies such as heat assisted magnetic recording, aerogels, ...

  12. Generation gaps in engineering?

    E-Print Network [OSTI]

    Kim, David J. (David Jinwoo)

    2008-01-01

    There is much enthusiastic debate on the topic of generation gaps in the workplace today; what the generational differences are, how to address the apparent challenges, and if the generations themselves are even real. ...

  13. Fiber optic gap gauge

    DOE Patents [OSTI]

    Wood, Billy E. (Livermore, CA); Groves, Scott E. (Brentwood, CA); Larsen, Greg J. (Brentwood, CA); Sanchez, Roberto J. (Pleasanton, CA)

    2006-11-14

    A lightweight, small size, high sensitivity gauge for indirectly measuring displacement or absolute gap width by measuring axial strain in an orthogonal direction to the displacement/gap width. The gap gauge includes a preferably titanium base having a central tension bar with springs connecting opposite ends of the tension bar to a pair of end connector bars, and an elongated bow spring connected to the end connector bars with a middle section bowed away from the base to define a gap. The bow spring is capable of producing an axial strain in the base proportional to a displacement of the middle section in a direction orthogonal to the base. And a strain sensor, such as a Fabry-Perot interferometer strain sensor, is connected to measure the axial strain in the base, so that the displacement of the middle section may be indirectly determined from the measurement of the axial strain in the base.

  14. Momentum dependence of the superconducting gap and in-gap states in MgB2 multiband superconductor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mou, Daixiang; Jiang, Rui; Taufour, Valentin; Bud'ko, S. L.; Canfield, P. C.; Kaminski, Adam

    2015-06-29

    We use tunable laser-based angle-resolved photoemission spectroscopy to study the electronic structure of the multiband superconductor MgB2. These results form the baseline for detailed studies of superconductivity in multiband systems. We find that the magnitude of the superconducting gap on both ? bands follows a BCS-like variation with temperature with ?0 ~ 7meV. Furthermore, the value of the gap is isotropic within experimental uncertainty and in agreement with a pure s-wave pairing symmetry. We observe in-gap states confined to kF of the ? band that occur at some locations of the sample surface. As a result, the energy of thismore »excitation, ~ 3 meV, was found to be somewhat larger than the previously reported gap on ? Fermi sheet and therefore we cannot exclude the possibility of interband scattering as its origin.« less

  15. Inception report and Gap analysis

    E-Print Network [OSTI]

    Inception report and Gap analysis Boiler inspection Riga, June 2004 #12;Inception report and gap analysis ­ boiler inspection Table of Content 1 INTRODUCTION ................................................................................................................................. 3 2 BOILER INSTALLATIONS ­ GAP ANALYSIS

  16. Band structure engineering for solar energy applications: ZnO1-xSex films and devices

    E-Print Network [OSTI]

    Mayer, Marie Annette

    2012-01-01

    especially in solar energy conversion. In this dissertationmechanism of solar energy conversion is photosynthesis inusefulness in solar energy conversion. Band gap engineering

  17. MI Gap Clearing Kicker Magnet Design Review

    SciTech Connect (OSTI)

    Jensen, Chris; /Fermilab

    2008-10-01

    The kicker system requirements were originally conceived for the NOvA project. NOvA is a neutrino experiment located in Minnesota. To achieve the desired neutrino flux several upgrades are required to the accelerator complex. The Recycler will be used as a proton pre-injector for the Main Injector (MI). As the Recycler is the same size as the MI, it is possible to do a single turn fill ({approx}11 {micro}sec), minimizing the proton injection time in the MI cycle and maximizing the protons on target. The Recycler can then be filled with beam while the MI is ramping to extract beam to the target. To do this requires two new transfer lines. The existing Recycler injection line was designed for 10{pi} pbar beams, not the 20{pi} proton beams we anticipate from the Booster. The existing Recycler extraction line allows for proton injection through the MI, while we want direct injection from the Booster. These two lines will be decommissioned. The new injection line from the MI8 line into the Recycler will start at 848 and end with injection kickers at RR104. The new extraction line in the RR30 straight section will start with a new extraction kicker at RR232 and end with new MI injection kickers at MI308. Finally, to reduce beam loss activation in the enclosure, a new gap clearing kicker will be used to extract uncaptured beam created during the slip stack injection process down the existing dump line. It was suggested that the MI could benefit from this type of system immediately. This led to the early installation of the gap clearing system in the MI, followed by moving the system to Recycler during NOvA. The specifications also changed during this process. Initially the rise and fall time requirements were 38 ns and the field stability was {+-}1%. The 38 ns is based on having a gap of 2 RF buckets between injections. (There are 84 RF buckets that can be filled from the Booster for each injection, but 82 would be filled with beam. MI and Recycler contain 588 RF buckets.) A rough cost/benefit analysis showed that increasing the number of empty buckets to 3 decreased the kicker system cost by {approx}30%. This could be done while not extending the running time since this is only a 1% reduction in protons per pulse, hence the rise and fall time are now 57 ns. Additionally, the {+-}1% tolerance would have required a fast correction kicker while {+-}3% could be achieved without this kicker. The loosened tolerance was based on experience on wide band damping systems in the MI. A higher power wideband damping system is a better use of the resources as it can be used to correct for multiple sources of emittance growth. Finally, with the use of this system for MI instead of Recycler, the required strength grew from 1.2 mrad to 1.7 mrad. The final requirements for this kicker are listed.

  18. Uncertainties in Gapped Graphene

    E-Print Network [OSTI]

    Eylee Jung; Kwang S. Kim; DaeKil Park

    2012-03-20

    Motivated by graphene-based quantum computer we examine the time-dependence of the position-momentum and position-velocity uncertainties in the monolayer gapped graphene. The effect of the energy gap to the uncertainties is shown to appear via the Compton-like wavelength $\\lambda_c$. The uncertainties in the graphene are mainly contributed by two phenomena, spreading and zitterbewegung. While the former determines the uncertainties in the long-range of time, the latter gives the highly oscillation to the uncertainties in the short-range of time. The uncertainties in the graphene are compared with the corresponding values for the usual free Hamiltonian $\\hat{H}_{free} = (p_1^2 + p_2^2) / 2 M$. It is shown that the uncertainties can be under control within the quantum mechanical law if one can choose the gap parameter $\\lambda_c$ freely.

  19. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen Edward (Pinole, CA); Bourret-Courchesne, Edith (Berkeley, CA); Weber, Marvin J. (Danville, CA); Klintenberg, Mattias K. (Berkeley, CA)

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  20. Dynamically Generated Mott Gap from Holography

    SciTech Connect (OSTI)

    Edalati, Mohammad; Leigh, Robert G.; Phillips, Philip W.

    2011-03-04

    In the fermionic sector of top-down approaches to holographic systems, one generically finds that the fermions are coupled to gravity and gauge fields in a variety of ways, beyond minimal coupling. In this Letter, we take one such interaction--a Pauli, or dipole, interaction--and study its effects on fermion correlators. We find that this interaction modifies the fermion spectral density in a remarkable way. As we change the strength of the interaction, we find that spectral weight is transferred between bands, and beyond a critical value, a gap emerges in the fermion density of states. A possible interpretation of this bulk interaction then is that it drives the dynamical formation of a (Mott) gap, in the absence of continuous symmetry breaking.

  1. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  2. GAP TESTS; COMPARISON BETWEEN UN GAP TEST AND CARD GAP TEST

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    98-36 GAP TESTS; COMPARISON BETWEEN UN GAP TEST AND CARD GAP TEST by R. BRANKA and C. MICHOT, FRANCE (tel.: 33 3 44 55 65 19, fax: 33 3 44 55 65 10) ABSTRACT: UN gap test, type 1(a) or 2(a), is the recommended test in the acceptance procedure for transport of explosives in class 1. Up to the revision

  3. Phenomenological two-gap model for the specific heat of MgB2

    E-Print Network [OSTI]

    2001-01-01

    two^gap model for the specific heat of MgB F. BOUQUET ' , Y.2 - BCS normalized specific heat (thin line), experimentaldotted lines), and partial specific heat of both bands (full

  4. Extreme multiplex spectroscopy at wide-field 4-m telescopes

    E-Print Network [OSTI]

    Robert Content; Tom Shanks

    2008-08-18

    We describe the design and science case for a spectrograph for the prime focus of classical 4-m wide-field telescopes that can deliver at least 4000 MOS slits over a 1 degree field. This extreme multiplex capability means that 25000 galaxy redshifts can be measured in a single night, opening up the possibilities for large galaxy redshift surveys out to z~0.7 and beyond for the purpose of measuring the Baryon Acoustic Oscillation (BAO) scale and for many other science goals. The design features four cloned spectrographs and exploits the exclusive possibility of tiling the focal plane of wide-field 4-m telescopes with CCDs for multi-object spectroscopic purposes. In ~200 night projects, such spectrographs have the potential to make galaxy redshift surveys of ~6 million galaxies over a wide redshift range and thus may provide a low-cost alternative to other survey routes such as WFMOS and SKA. Two of these extreme multiplex spectrographs are currently being designed for the AAT (NG1dF) and Calar Alto (XMS) 4-m class telescopes. NG2dF, a larger version for the AAT 2 degree field, would have 12 clones and at least 12000 slits. The clones use a transparent design including a grism in which all optics are smaller than the clone square subfield so that the clones can be tightly packed with little gaps between the contiguous fields. Only low cost glasses are used; the variations in chromatic aberrations between bands are compensated by changing one or two of the lenses adjacent to the grism. The total weight and length is smaller with a few clones than a unique spectrograph which makes it feasible to place the spectrograph at the prime focus.

  5. Optical gain from the direct gap transition of Ge-on-Si at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

  6. Spatially-resolved microstructure in shear banding wormlike micellar solutions

    SciTech Connect (OSTI)

    Helgeson, Matthew E.; Reichert, Matthew D.; Wagner, Norman J.; Kaler, Eric W. [Department of Chemical Engineering, University of Delaware, Newark, DE 19716 (United States)

    2008-07-07

    Recently proposed theories for shear banding in wormlike micellar solutions (WLMs) rely on a shear-induced isotropic-nematic (I-N) phase separation as the mechanism for banding. Critical tests of such theories require spatially-resolved measurements of flow-kinematics and local mesoscale microstructure within the shear bands. We have recently developed such capabilities using a short gap Couette cell for flow-small angle neutron scattering (flow-SANS) measurements in the 1-2 plane of shear with collaborators at the NIST Center for Neutron Research. This work combines flow-SANS measurements with rheology, rheo-optics and velocimetry measurements to present the first complete spatially-resolved study of WLMs through the shear banding transition for a model shear banding WLM solution near the I-N phase boundary. The shear rheology is well-modeled by the Giesekus constitutive equation, with incorporated stress diffusion to predict shear banding. By fitting the stress diffusivity at the onset of banding, the model enables prediction of velocity profiles in the shear banded state which are in quantitative agreement with measured flow-kinematics. Quantitative analysis of the flow-SANS measurements shows a critical segmental alignment for banding and validates the Giesekus model predictions, linking segmental orientation to shear banding and providing the first rigorous evidence for the shear-induced I-N transition mechanism for shear banding.

  7. Gapped Domain Walls, Gapped Boundaries and Topological Degeneracy

    E-Print Network [OSTI]

    Tian Lan; Juven Wang; Xiao-Gang Wen

    2014-11-26

    Gapped domain walls, as topological line defects between 2+1D topologically ordered states, are examined. We provide simple criteria to determine the existence of gapped domain walls, which apply to both Abelian and non-Abelian topological orders. Our criteria also determine which 2+1D topological orders must have gapless edge modes, namely which 1+1D global gravitational anomalies ensure gaplessness. Furthermore, we introduce a new mathematical object, the tunneling matrix $\\mathcal W$, whose entries are the fusion-space dimensions $\\mathcal W_{ia}$, to label different types of gapped domain walls. By studying many examples, we find evidence that the tunneling matrices are powerful quantities to classify different types of gapped domain walls. Since a gapped boundary is a gapped domain wall between a bulk topological order and the vacuum, regarded as the trivial topological order, our theory of gapped domain walls inclusively contains the theory of gapped boundaries. In addition, we derive a topological ground state degeneracy formula, applied to arbitrary orientable spatial 2-manifolds with gapped domain walls, including closed 2-manifolds and open 2-manifolds with gapped boundaries.

  8. The diameter of the world wide web

    E-Print Network [OSTI]

    Reka Albert; Hawoong Jeong; Albert-Laszlo Barabasi

    1999-09-10

    Despite its increasing role in communication, the world wide web remains the least controlled medium: any individual or institution can create websites with unrestricted number of documents and links. While great efforts are made to map and characterize the Internet's infrastructure, little is known about the topology of the web. Here we take a first step to fill this gap: we use local connectivity measurements to construct a topological model of the world wide web, allowing us to explore and characterize its large scale properties.

  9. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  10. The Pennsylvania State University Marching Blue Band Blue Band Office

    E-Print Network [OSTI]

    Maroncelli, Mark

    The Pennsylvania State University Marching Blue Band Press Kit Blue Band Office 101 Blue Band Director vcc2@psu.edu orb1@psu.edu gad157@psu.edu (814) 865 - 3982 #12;History of the Blue Band The Marching Blue Band numbers 310 members which includes: 260 instrumentalists, 34 silks, 14 Touch of Blue

  11. Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces

    SciTech Connect (OSTI)

    Mandelis, Andreas; Batista, Jerias; Gibkes, Juergen; Pawlak, Michael; Pelzl, Josef [Institute fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801, Germany and Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario, M5S 3G8 (Canada); Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario, M5S 3G8 (Canada); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801 (Germany); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801, Germany and Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitat Bochum, Bochum D-44801 (Germany)

    2005-04-15

    Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.

  12. Triaxial strongly deformed bands in {sup 164}Hf and the effect of elevated yrast line

    SciTech Connect (OSTI)

    Ma Wenchao

    2012-10-20

    Two exotic rotational bands have been identified in {sup 164}Hf and linked to known states. They are interpreted as being associated with the calculated triaxial strongly deformed (TSD) potential energy minimum. The bands are substantially stronger and are located at much lower spins than the previously discovered TSD bands in {sup 168}Hf. In addition to the proton and neutron shell gaps at large trixiality, it was proposed that the relative excitation energy of TSD bands above the yrast line plays an important role in the population of TSD bands.

  13. Crystal and electronic band structure of Cu2ZnSnX4 ,,X=S and Se... photovoltaic absorbers: First-principles insights

    E-Print Network [OSTI]

    Gong, Xingao

    components, and the band gap is usually not optimal for high efficiency CIGS solar cells. Currently, designing and synthesizing novel, high-efficiency, and low cost solar cell absorbers to replace CIGS has.1063/1.3074499 An ideal thin-film solar cell absorber material should have a direct band gap around 1.3­1.5 e

  14. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, D.A.; Flood, W.S.; Arthur, A.A.; Voelker, F.

    1984-03-20

    A broad-band beam bunther is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-

  15. Wide Blue Sky

    E-Print Network [OSTI]

    Collins, Caroline Imani

    2011-01-01

    dressed neatly in a dark blue dress, its high neck trimmedIt was covered in a light blue fabric embellished with softOF CALIFORNIA RIVERSIDE Wide Blue Sky A Thesis submitted in

  16. Island Wide Management Corporation

    Office of Legacy Management (LM)

    9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have...

  17. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    SciTech Connect (OSTI)

    Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  18. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

    SciTech Connect (OSTI)

    Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Khamari, S. K.; Kumar, R.; Tiwari, Pragya; Sharma, T. K.; Oak, S. M. [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Phase, D. M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001 (India)

    2014-03-03

    Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7?±?0.1?eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

  19. Pneumatic gap sensor and method

    DOE Patents [OSTI]

    Bagdal, Karl T. (Middletown, OH); King, Edward L. (Trenton, OH); Follstaedt, Donald W. (Middletown, OH)

    1992-01-01

    An apparatus and method for monitoring and maintaining a predetermined width in the gap between a casting nozzle and a casting wheel, wherein the gap is monitored by means of at least one pneumatic gap sensor. The pneumatic gap sensor is mounted on the casting nozzle in proximity to the casting surface and is connected by means of a tube to a regulator and a transducer. The regulator provides a flow of gas through a restictor to the pneumatic gap sensor, and the transducer translates the changes in the gas pressure caused by the proximity of the casting wheel to the pneumatic gap sensor outlet into a signal intelligible to a control device. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. The apparatus and method enables accurate monitoring of the actual casting gap in a simple and reliable manner resistant to the extreme temperatures and otherwise hostile casting environment.

  20. Pneumatic gap sensor and method

    DOE Patents [OSTI]

    Bagdal, K.T.; King, E.L.; Follstaedt, D.W.

    1992-03-03

    An apparatus and method for monitoring and maintaining a predetermined width in the gap between a casting nozzle and a casting wheel, wherein the gap is monitored by means of at least one pneumatic gap sensor. The pneumatic gap sensor is mounted on the casting nozzle in proximity to the casting surface and is connected by means of a tube to a regulator and a transducer. The regulator provides a flow of gas through a restictor to the pneumatic gap sensor, and the transducer translates the changes in the gas pressure caused by the proximity of the casting wheel to the pneumatic gap sensor outlet into a signal intelligible to a control device. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. The apparatus and method enables accurate monitoring of the actual casting gap in a simple and reliable manner resistant to the extreme temperatures and otherwise hostile casting environment. 6 figs.

  1. An evaluation of fusion energy R&D gaps using Technology Readiness Levels

    E-Print Network [OSTI]

    An evaluation of fusion energy R&D gaps using Technology Readiness Levels M. S. Tillack for prioritization. #12;The topic of fusion energy R&D gaps is receiving increased attention page 2 of 16 In EU&D needs that is widely recognized and utilized outside of the fusion community. Initial efforts

  2. Nonequilibrium superconducting thin films with sub-gap and pair-breaking photon illumination

    E-Print Network [OSTI]

    Guruswamy, T.; Goldie, D. J.; Withington, S.

    2015-04-08

    We calculate nonequilibrium quasiparticle and phonon distributions for a number of widely-used low transition temperature thin-film superconductors under constant, uniform illumination by sub-gap probe and pair-breaking signal photons simultaneously...

  3. Phenomenological two-gap model for the specific heat of MgB2

    SciTech Connect (OSTI)

    Bouquet, F.; Wang, Y.; Fisher, R.A.; Hinks, D.G.; Jorgensen, J.D.; Junod, A.; Phillips, N.E.

    2001-06-22

    The authors show that the specific heat of the superconductor MgB{sub 2} in zero field, for which significant non-BCS features have been reported, can be fitted, essentially within experimental error, over the entire range of temperature to T{sub c} by a phenomenological two-gap model. The resulting gap parameters agree with previous determinations from band-structure calculations, and from various spectroscopic experiments. The determination from specific heat, a bulk property, shows that the presence of two superconducting gaps in MgB{sub 2} is a volume effect.

  4. Highly Mismatched Alloys for Intermediate Band Solar Cells

    SciTech Connect (OSTI)

    Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

    2005-03-21

    It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

  5. Virtual gap dielectric wall accelerator

    DOE Patents [OSTI]

    Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

    2013-11-05

    A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

  6. 1D periodic potentials with gaps vanishing at k=0

    E-Print Network [OSTI]

    O. Zagordi; A. Michelangeli

    2008-10-13

    Appearance of energy bands and gaps in the dispersion relations of a periodic potential is a standard feature of Quantum Mechanics. We investigate the class of one-dimensional periodic potentials for which all gaps vanish at the center of the Brillouin zone. We characterize them through a necessary and sufficient condition. Potentials of the form we focus on arise in different fields of Physics, from supersymmetric Quantum Mechanics, to Korteweg-de Vries equation theory and classical diffusion problems. The O.D.E. counterpart to this problem is the characterisation of periodic potentials for which coexistence occur of linearly independent solutions of the corresponding Schroedinger equation (Hill's equation). This result is placed in perspective of the previous related results available in the literature.

  7. Multiple input electrode gap controller

    DOE Patents [OSTI]

    Hysinger, Christopher L. (Austin, TX); Beaman, Joseph J. (Austin, TX); Melgaard, David K. (Albuquerque, NE); Williamson, Rodney L. (Albuquerque, NE)

    1999-01-01

    A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows.

  8. Multiple input electrode gap controller

    DOE Patents [OSTI]

    Hysinger, C.L.; Beaman, J.J.; Melgaard, D.K.; Williamson, R.L.

    1999-07-27

    A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows. 17 figs.

  9. Two-Dimensional Ferroelectric Photonic Crystals: Optics and Band Structure

    E-Print Network [OSTI]

    Simsek, Sevket; Ozbay, Ekmel

    2013-01-01

    In this report we present an investigation of the optical properties and band structure calculations for the photonic structures based on the functional materials- ferroelectrics. A theoretical approach to the optical properties of the 2D and 3D photonic crystals which yields further insight in the phenomenon of the reflection from different families of lattice planes in relation to the presence of photonic gaps or photonic bands. We calculate the photonic bands and optical properties of LiNbO3 based photonic crystals. Calculations of reflection and transmission spectra show the features correspond to the onset of diffraction, as well as to additional reflectance structures at large values of the angle of incidence.

  10. Air Gap Effects in LX-17

    SciTech Connect (OSTI)

    Souers, P C; Ault, S; Avara, R; Bahl, K L; Boat, R; Cunningham, B; Gidding, D; Janzen, J; Kuklo, D; Lee, R; Lauderbach, L; Weingart, W C; Wu, B; Winer, K

    2005-09-26

    Three experiments done over twenty years on gaps in LX-17 are reported. For the detonation front moving parallel to the gaps, jets of gas products were seen coming from the gaps at velocities greater than the detonation velocity. A case can be made that the jet velocity increased with gap thickness but the data is scattered. For the detonation front moving transverse to the gap, time delays were seen. The delays roughly increase with gap width, going from 0-70 ns at 'zero gap' to around 300 ns at 0.5-1 mm gap. Larger gaps of up to 6 mm width almost certainly stopped the detonation, but this was not proved. Real-time resolution of the parallel jets and determination of the actual re-detonation or failure in the transverse case needs to be done in future experiments.

  11. GAP

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia4) AugustA. GeographicYucca

  12. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    SciTech Connect (OSTI)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  13. Electronic gap sensor and method

    DOE Patents [OSTI]

    Williams, Robert S. (Fairfield, OH); King, Edward L. (Trenton, OH); Campbell, Steven L. (Middletown, OH)

    1991-01-01

    An apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces.

  14. Electronic gap sensor and method

    DOE Patents [OSTI]

    Williams, R.S.; King, E.L.; Campbell, S.L.

    1991-08-06

    Disclosed are an apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. 5 figures.

  15. Hard-gapped Holographic Superconductors

    E-Print Network [OSTI]

    Pallab Basu; Jianyang He; Anindya Mukherjee; Hsien-Hang Shieh

    2009-12-05

    In this work we discuss the zero temperature limit of a "p-wave" holographic superconductor. The bulk description consists of a non-Abelian SU(2) gauge fields minimally coupled to gravity. We numerically construct the zero temperature solution which is the gravity dual of the superconducting ground state of the "p-wave" holographic superconductors. The solution is a smooth soliton with zero horizon size and shows an emergent conformal symmetry in the IR. We found the expected superconducting behavior. Using the near horizon analysis we show that the system has a "hard gap" for the relevant gauge field fluctuations. At zero temperature the real part of the conductivity is zero for an excitation frequency less than the gap frequency. This is in contrast with what has been observed in similar scalar- gravity-gauge systems (holographic superconductors). We also discuss the low but finite temperature behavior of our solution.

  16. The discovery of y dwarfs using data from the wide-field infrared survey explorer (WISE)

    E-Print Network [OSTI]

    Cushing, Michael C.

    We present the discovery of seven ultracool brown dwarfs identified with the Wide-field Infrared Survey Explorer (WISE). Near-infrared spectroscopy reveals deep absorption bands of H[subscript 2]O and CH[subscript 4] that ...

  17. Calibration curves for some standard Gap Tests

    SciTech Connect (OSTI)

    Bowman, A.L.; Sommer, S.C.

    1989-01-01

    The relative shock sensitivities of explosive compositions are commonly assessed using a family of experiments that can be described by the generic term ''Gap Test.'' Gap tests include a donor charge, a test sample, and a spacer, or gap, between two explosives charges. The donor charge, gap material, and test dimensions are held constant within each different version of the gap test. The thickness of the gap is then varied to find the value at which 50% of the test samples will detonate. The gap tests measure the ease with a high-order detonation can be established in the test explosive, or the ''detonability,'' of the explosive. Test results are best reported in terms of the gap thickness at the 50% point. It is also useful to define the shock pressure transmitted into the test sample at the detonation threshold. This requires calibrating the gap test in terms of shock pressure in the gap as a function of the gap thickness. It also requires a knowledge of the shock Hugoniot of the sample explosive. We used the 2DE reactive hydrodynamic code with Forest Fire burn rates for the donor explosives to calculate calibration curves for several gap tests. The model calculations give pressure and particle velocity on the centerline of the experimental set-up and provide information about the curvature and pulse width of the shock wave. 10 refs., 1 fig.

  18. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect (OSTI)

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  19. Development of Low Energy Gap and Fully Regioregular Polythienylenevinylene Derivative

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    David, Tanya M. S.; Zhang, Cheng; Sun, Sam-Shajing

    2014-01-01

    Low energy gap and fully regioregular conjugated polymers find its wide use in solar energy conversion applications. This paper will first briefly review this type of polymers and also report synthesis and characterization of a specific example new polymer, a low energy gap, fully regioregular, terminal functionalized, and processable conjugated polymer poly-(3-dodecyloxy-2,5-thienylene vinylene) or PDDTV. The polymer exhibited an optical energy gap of 1.46?eV based on the UV-vis-NIR absorption spectrum. The electrochemically measured highest occupied molecular orbital (HOMO) level is ?4.79?eV, resulting in the lowest unoccupied molecular orbital (LUMO) level of ?3.33?eV based on optical energy gap. The polymer wasmore »synthesized via Horner-Emmons condensation and is fairly soluble in common organic solvents such as tetrahydrofuran and chloroform with gentle heating. DSC showed two endothermic peaks at 67°C and 227°C that can be attributed to transitions between crystalline and liquid states. The polymer is thermally stable up to about 300°C. This polymer appears very promising for cost-effective solar cell applications.« less

  20. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    E-Print Network [OSTI]

    Pereira, LMC; Wahl, U

    Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

  1. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    E-Print Network [OSTI]

    Pereira, LMC; Wahl, U

    Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

  2. Inverse Design of Mn-based ternary p-type wide-gap oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenryInhibitingInteractivePGAS and HybridBetoniCenter for Inverse

  3. Inverse Design of Mn-based ternary p-type wide-gap oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenryInhibitingInteractivePGAS and HybridBetoniCenter for Inverseused

  4. Stability of S and Se induced reconstructions on GaP(001)(2×1) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(2×1) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(2×1) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  5. Technical Standards, MELCOR - Gap Analysis - May 3, 2004 | Department...

    Office of Environmental Management (EM)

    MELCOR - Gap Analysis - May 3, 2004 Technical Standards, MELCOR - Gap Analysis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: MELCOR Gap Analysis This...

  6. Gap solitons in rocking optical lattices and waveguides with undulating gratings

    SciTech Connect (OSTI)

    Mayteevarunyoo, Thawatchai; Malomed, Boris A.

    2009-07-15

    We report results of a systematic analysis of the stability of one-dimensional solitons in a model including the self-repulsive or attractive cubic nonlinearity and a linear potential represented by a periodically shaking lattice, which was recently implemented in experiments with Bose-Einstein condensates. In optics, the same model applies to undulated waveguiding arrays, which are also available to the experiment. In the case of the repulsive nonlinearity, stability regions are presented, in relevant parameter planes, for fundamental gap solitons and their two-peak and three-peak bound complexes, in the first and second finite band gaps. In the model with the attractive nonlinearity, stability regions are produced for fundamental solitons and their bound states populating the semi-infinite gap. In the first finite and semi-infinite gaps, unstable solitons gradually decay into radiation, while, in the second finite band gap, they are transformed into more complex states, which may represent new species of solitons. For a large amplitude of the rocking-lattice drive, the model is tantamount to that with a 'flashing' lattice potential, which is controlled by periodic sequences of instantaneous kicks. Using this correspondence, we explain generic features of the stability diagrams for the solitons. We also derive a limit case of the latter system, in the form of coupled-mode equations with a 'flashing' linear coupling.

  7. Influence of Al doping on the critical fields and gap values in magnesium diboride single crystals T. Klein,1,2 L. Lyard,1 J. Marcus,1 C. Marcenat,3 P. Szab,4 Z. Hol'anov,4 P. Samuely,4 B. W. Kang,5 H-J. Kim,5

    E-Print Network [OSTI]

    Boyer, Edmond

    that MgB2 belongs to an origi- nal class of superconductors in which two weakly coupled bands with very the existence of two distinct superconducting gaps. One of the main consequence of this two-band superconduc of the superconducting gaps with Al doping remains controversial. Whereas Gonnelli et al.15 sug- gested that the small

  8. Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence

    E-Print Network [OSTI]

    Russell, Kasey

    of the optical gap and Burstein-Moss shift in CdO thin films: A consequence of extended misuse of 2-versusNarrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence-like opto-electronic properties Appl. Phys. Lett. 99, 141917 (2011) Oxygen enhanced ferromagnetism in Cr-doped

  9. Goncu, JASA-EL Exploiting pattern transformation to tune phononic band

    E-Print Network [OSTI]

    Luding, Stefan

    -dimensional granular crystal composed of silicone rubber and polytetrafluoroethylene (PTFE) cylinders is investigated by the pattern transformation which induces new band gaps. Replacement of PTFE particles with rubber ones reveals) silicone rubber and small (and stiff) polyte- trafluoroethylene (PTFE) cylinders14 . In the undeformed

  10. Maximum Theoretical Efficiency Limit of Photovoltaic Devices: Effect of Band Structure on Excited State Entropy

    E-Print Network [OSTI]

    Osterloh, Frank

    on the electronic structure of the semiconductor, that is, they are a materials property. They can be calculated. But besides the semiconductor bandgap no other semiconductor properties are considered in the analysis. Here the band gap, no other semiconductor properties are considered in the model. This cannot account

  11. Band-dropping via coupled photonic crystal Mehmet Bayindir and Ekmel Ozbay

    E-Print Network [OSTI]

    Ozbay, Ekmel

    and links 1. J. D. Joannopoulos, R. D. Meade, and J. N. Winn, Photonic Crystals: Molding the Flow of Light. Kim, "Two- dimensional photonic band-gap defect mode laser," Science 284, 1819­1821 (1999). 7. S. Noda by a single defect in a photonic bandgap structure," Nature 407, 608­610 (2000). 16. B. E. Nelson, M. Gerken

  12. Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

    E-Print Network [OSTI]

    He, Chao-Ni; Xu, Liang; Yang, Yin-Cai; Zhou, Bing-Xin; Huang, Gui-Fang; Peng, P; Liu, Wu-Ming

    2015-01-01

    The enhanced photocatalytic performance of doped graphene(GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the effect of dopants, we investigate the electronic structures and optical properites of doped GR/Ag3PO4 nanocomposites using the first-principles calculations, demonstrating that the band gap, near-gap electronic structure and interface charge transfer of the doped GR/Ag3PO4(100) composite can be tuned by the dopants. Interestingly, the doping atom and C atoms bonded to dopant become active sites for photocatalysis because they are positively or negatively charged due to the charge redistribution caused by interaction. The dopants can enhance the visible light absorption and photoinduced electrons transfer. We propose that the N atom may be most appropriate doping for the GR/Ag3PO4 photocatalyst. This work can rationalize the available experimental results about N-doped GR-s...

  13. GAPS IN THE GD-1 STAR STREAM

    SciTech Connect (OSTI)

    Carlberg, R. G. [Department of Astronomy and Astrophysics, University of Toronto, Toronto, ON M5S 3H4 (Canada); Grillmair, C. J., E-mail: carlberg@astro.utoronto.ca, E-mail: carl@ipac.caltech.edu [Spitzer Science Center, 1200 East California Boulevard, Pasadena, CA 91125 (United States)

    2013-05-10

    GD-1 is a long, thin, Milky Way star stream that has readily visible density variations along its length. We quantify the locations, sizes, and statistical significance of the density structure, i.e., gaps, using a set of scaled filters. The shapes of the filters are based on the gaps that develop in simulations of dark matter sub-halos crossing a star stream. The high Galactic latitude 8.4 kpc long segment of GD-1 that we examine has 8 {+-} 3 gaps of 99% significance or greater, with the error estimated on the basis of tests of the gap-filtering technique. The cumulative distribution of gaps more than three times the width of the stream is in good agreement with predictions for dark matter sub-halo encounters with cold star streams. The number of gaps narrower than three times the width of the GD-1 stream falls well below the cold stream prediction which is taken into account for the gap creation rate integrated over all sizes. Simple warm stream simulations scaled to GD-1 show that the falloff in gaps is expected for sub-halos below a mass of 10{sup 6} M{sub Sun }. The GD-1 gaps requires 100 sub-halos >10{sup 6} M{sub Sun} within 30 kpc, the apocenter of GD-1 orbit. These results are consistent with LCDM sub-halo predictions but further improvements in stream signal-to-noise and gap modeling will be welcome.

  14. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  15. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  16. The effect of spin-orbit coupling in band structure of few-layer graphene

    SciTech Connect (OSTI)

    Sahdan, Muhammad Fauzi Darma, Yudi

    2014-03-24

    Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

  17. Photonic Band Gaps Based on Tetragonal Lattices of Slanted Pores Ovidiu Toader,1

    E-Print Network [OSTI]

    John, Sajeev

    ) concept [1,2], one of the holy grails of the subject has been the design and synthesis of high quality

  18. Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

    E-Print Network [OSTI]

    Svane, Axel Torstein

    . Svane5 1 Institute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland 2Institute of Physics, Polish Academy of Sciences, Warsaw, Poland 3CRHEA-CNRS, Sophia Antipolis, Valbonne, France 4 Institute of Condensed Matter Physics, �cole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne

  19. Attenuation of optical transmission within the band gap of thin twodimensional macroporous silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    solution and illuminated from the wafer backside. If applied to a polished silicon wafer, the pore@physics.utoronto.ca b# Present address: Institute for Theory of Condensed Matter, University of Karlsruhe, P.O. Box 6980

  20. Final Report: Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

    SciTech Connect (OSTI)

    Bedair, Salah M.; Hauser, John R.; Elmasry, Nadia; Colter, Peter C.; Bradshaw, G.; Carlin, C. Z.; Samberg, J.; Edmonson, Kenneth

    2012-07-31

    We report on a joint research program between NCSU and Spectrolab to develop an upright multijunction solar cell structure with a potential efficiency exceeding the current record of 41.6% reported by Spectrolab. The record efficiency Ge/GaAs/InGaP triple junction cell structure is handicapped by the fact that the current generated by the Ge cell is much higher than that of both the middle and top cells. We carried out a modification of the record cell structure that will keep the lattice matched condition and allow better matching of the current generated by each cell. We used the concept of strain balanced strained layer superlattices (SLS), inserted in the i-layer, to reduce the bandgap of the middle cell without violating the desirable lattice matched condition. For the middle GaAs cell, we have demonstrated an n-GaAs/i-(InGaAs/GaAsP)/p-GaAs structure, where the InxGa1-xAs/GaAs1-yPy SLS is grown lattice matched to GaAs and with reduced bandgap from 1.43 eV to 1.2 eV, depending upon the values of x and y.

  1. Optimized dipole antennas on photonic band gap crystals S. D. Chenga)

    E-Print Network [OSTI]

    Ozbay, Ekmel

    efficiencies larger than antennas on other conventional dielectric substrates. © 1995 American Institute . A three-cylinder structure with diamond symmetry fabricated by drilling techniques first demonstrated3; an efficient directional antenna. Conventional integrated circuit antennas on a semi-infinite semiconductor

  2. Tunable micro-cavities in photonic band-gap yarns and optical fibers

    E-Print Network [OSTI]

    Benoit, Gilles, Ph. D. Massachusetts Institute of Technology

    2006-01-01

    The vision behind this work is the fabrication of high performance innovative fiber-based optical components over kilometer length-scales. The optical properties of these fibers derive from their multilayer dielectric ...

  3. Comment on "Direct space-time observation of pulse tunneling in an electromagnetic band gap"

    E-Print Network [OSTI]

    G. Nimtz; A. A. Stahlhofen

    2008-01-13

    The investigation presented by Doiron, Hache, and Winful [Phys. Rev. A 76, 023823 (2007)] is not valid for the tunneling process as claimed in the paper.

  4. Bispyridinium-phenylene-based copolymers: low band gap n-type alternating copolymers

    E-Print Network [OSTI]

    Swager, Timothy Manning

    Bispyridinium-phenylene-based conjugated donor–acceptor copolymers were synthesized by a Stille cross-coupling and cyclization sequence. These polyelectrolytes are freely soluble in organic solvents and display broad optical ...

  5. Band gap gratings using quantum well intermixing for quasi-phase-matching

    E-Print Network [OSTI]

    ,b D. C. Hutchings,b J. S. Aitchison, and J. H. Marshc Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada, correlated photon pair sources, and cascaded Kerr-like nonlinearities, only to name a few. Particularly

  6. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion Batteries Print Lithium-ionAAEngineEIA'sA NewA New

  7. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion Batteries Print Lithium-ionAAEngineEIA'sA NewA NewA New

  8. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion Batteries Print Lithium-ionAAEngineEIA'sA NewA NewA NewA

  9. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion Batteries Print Lithium-ionAAEngineEIA'sA NewA NewA

  10. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion Batteries Print Lithium-ionAAEngineEIA'sA NewA NewAA New

  11. Strain-engineered band parameters of graphene-like SiC monolayer

    SciTech Connect (OSTI)

    Behera, Harihar; Mukhopadhyay, Gautam

    2014-10-06

    Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices.

  12. Topological edge states in two-gap unitary systems: A transfer matrix approach

    E-Print Network [OSTI]

    Clément Tauber; Pierre Delplace

    2015-09-17

    We construct and investigate a family of two-band unitary systems living on a cylinder geometry and presenting localized edge states. Using the transfer matrix formalism, we solve and investigate in details such states in the thermodynamic limit. Analitycity considerations then suggest the construction of a family of Riemman surfaces associated to the band structure of the system. In this picture, the corresponding edge states naturally wind around non contractile loops, defining by the way a topological invariant associated to each gap of the system.

  13. Topological edge states in two-gap unitary systems: A transfer matrix approach

    E-Print Network [OSTI]

    Clément Tauber; Pierre Delplace

    2015-10-23

    We construct and investigate a family of two-band unitary systems living on a cylinder geometry and presenting localized edge states. Using the transfer matrix formalism, we solve and investigate in details such states in the thermodynamic limit. Analitycity considerations then suggest the construction of a family of Riemman surfaces associated to the band structure of the system. In this picture, the corresponding edge states naturally wind around non contractile loops, defining by the way a topological invariant associated to each gap of the system.

  14. Gap between active and passive solar heating

    SciTech Connect (OSTI)

    Balcomb, J.D.

    1985-01-01

    The gap between active and passive solar could hardly be wider. The reasons for this are discussed and advantages to narrowing the gap are analyzed. Ten years of experience in both active and passive systems are reviewed, including costs, frequent problems, performance prediction, performance modeling, monitoring, and cooling concerns. Trends are analyzed, both for solar space heating and for service water heating. A tendency for the active and passive technologies to be converging is observed. Several recommendations for narrowing the gap are presented.

  15. FAQS Gap Analysis Qualification Card – Criticality Safety

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  16. FAQS Gap Analysis Qualification Card – Construction Management

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  17. FAQS Gap Analysis Qualification Card – Mechanical Systems

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  18. FAQS Gap Analysis Qualification Card – Emergency Management

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  19. FAQS Gap Analysis Qualification Card – Radiation Protection

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  20. Gap Assessment (FY 13 Update)

    SciTech Connect (OSTI)

    Getman, Dan

    2013-09-30

    To help guide its future data collection efforts, The DOE GTO funded a data gap analysis in FY2012 to identify high potential hydrothermal areas where critical data are needed. This analysis was updated in FY2013 and the resulting datasets are represented by this metadata. The original process was published in FY 2012 and is available here: https://pangea.stanford.edu/ERE/db/GeoConf/papers/SGW/2013/Esposito.pdf Though there are many types of data that can be used for hydrothermal exploration, five types of exploration data were targeted for this analysis. These data types were selected for their regional reconnaissance potential, and include many of the primary exploration techniques currently used by the geothermal industry. The data types include: 1. well data 2. geologic maps 3. fault maps 4. geochemistry data 5. geophysical data To determine data coverage, metadata for exploration data (including data type, data status, and coverage information) were collected and catalogued from nodes on the National Geothermal Data System (NGDS). It is the intention of this analysis that the data be updated from this source in a semi-automated fashion as new datasets are added to the NGDS nodes. In addition to this upload, an online tool was developed to allow all geothermal data providers to access this assessment and to directly add metadata themselves and view the results of the analysis via maps of data coverage in Geothermal Prospector (http://maps.nrel.gov/gt_prospector). A grid of the contiguous U.S. was created with 88,000 10-km by 10-km grid cells, and each cell was populated with the status of data availability corresponding to the five data types. Using these five data coverage maps and the USGS Resource Potential Map, sites were identified for future data collection efforts. These sites signify both that the USGS has indicated high favorability of occurrence of geothermal resources and that data gaps exist. The uploaded data are contained in two data files for each data category. The first file contains the grid and is in the SHP file format (shape file.) Each populated grid cell represents a 10k area within which data is known to exist. The second file is a CSV (comma separated value) file that contains all of the individual layers that intersected with the grid. This CSV can be joined with the map to retrieve a list of datasets that are available at any given site. The attributes in the CSV include: 1. grid_id : The id of the grid cell that the data intersects with 2. title: This represents the name of the WFS service that intersected with this grid cell 3. abstract: This represents the description of the WFS service that intersected with this grid cell 4. gap_type: This represents the category of data availability that these data fall within. As the current processing is pulling data from NGDS, this category universally represents data that are available in the NGDS and are ready for acquisition for analytic purposes. 5. proprietary_type: Whether the data are considered proprietary 6. service_type: The type of service 7. base_url: The service URL

  1. Conformal GaP layers on Si wire arrays for solar energy applications Adele C. Tamboli,a

    E-Print Network [OSTI]

    Kimball, Gregory

    silicon wire arrays using Cu- catalyzed vapor-liquid-solid growth.3 Multijunction wire ar- ray solar cells multijunction cells will require conformal growth of a lattice-matched wider band- gap material, such as Ga represent a new avenue for attaining higher efficiencies in wire array solar cells than are achievable

  2. Graphene quantum dots formed by a spatial modulation of the Dirac gap G. Giavaras1,a

    E-Print Network [OSTI]

    Nori, Franco

    /2 f1 r exp i m -1 ,if2 r exp im , where m=0, 1,... is the angular momentum quantum number. The radial functions f1 and f2 satisfy V - E + f1 + U + d dr f2 = 0, 2 U - d dr f1 + V - E - f2 = 0, 3 with U= 2m-1 /2r to con- fined states.4,5 It is experimentally possible to engineer an energy gap in graphene's band

  3. Drop short control of electrode gap

    DOE Patents [OSTI]

    Fisher, Robert W. (Albuquerque, NM); Maroone, James P. (Albuquerque, NM); Tipping, Donald W. (Albuquerque, NM); Zanner, Frank J. (Sandia Park, NM)

    1986-01-01

    During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

  4. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); McCorkle, Dennis L. (Knoxville, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  5. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  6. 2D pore-scale simulation of wide-band electromagnetic dispersion of saturated rocks

    E-Print Network [OSTI]

    Torres-Verdín, Carlos

    - tivity quantifies dissipation of energy, whereas dielectric permittivi- ty quantifies energy storage dispersion of saturated rocks. INTRODUCTION Maxwell-Wagner interfacial polarization process The complex Engineering,Austin,Texas; presently Chevron NorthAmerica Exploration and Production, Houston,Texas. E

  7. Double Wall Carbon Nanotubes for Wide-Band, Ultrafast Pulse Generation

    E-Print Network [OSTI]

    Hasan, Tawfique; Sun, Zhipei; Tan, PingHeng; Popa, Daniel; Flahaut, Emmanuel; Kelleher, Edmund J. R.; Bonaccorso, Francesco; Wang, Fengqiu; Jiang, Zhe; Torrisi, Felice; Privitera, Giulia; Nicolosi, Valeria; Ferrari, Andrea C.

    2014-04-15

    . Lett. 1998, 34, 198-199. [6] Jin, C. Y.; Kojima, O.; Inoue, T.; Kita, T.; Wada, O.; Hopkinson, M.; Akahane, K. Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity. IEEE J. Quantum Electron... of Cambridge, Cambridge, CB3 0FA, UK 2 Department of Micro- and Nanosciences, Aalto University, FI-00076 Aalto, Finland 3 State Key Laboratory for Supearlattices and Microstructures, P. O. Box 912, Beijing 100083, China 4 Université de Toulouse; UPS, INP...

  8. A WIDE-BAND MEASURING SYSTEM FOR STUDYING CHARGE-COUPLED DEVICE CHARACTERISTICS

    E-Print Network [OSTI]

    Leskovar, Branko

    2011-01-01

    2 Four-phase generator output timing diagram. HIGH-TO-LOWh i p between the generator output s i g - nals. High-to-Low

  9. Double-Wall Carbon Nanotubes for Wide-Band, Ultrafast Pulse Generation

    E-Print Network [OSTI]

    Hasan, Tawfique; Sun, Zhipei; Tan, PingHeng; Popa, Daniel; Flahaut, Emmanuel; Kelleher, Edmund J. R.; Bonaccorso, Francesco; Wang, Fengqiu; Jiang, Zhe; Torrisi, Felice; Privitera, Giulia; Nicolosi, Valeria; Ferrari, Andrea C.

    2014-04-15

    and SDBS as the surfactant to obtain higher concentration of isolated nano- tubes or small bundles 98 than possible with non- aqueous solvents. 99?101 PVA is used for its solvent compatibility. Slow evaporation of water at room temperature produces a... . 71 This is in addition to the effect of solvent properties (e.g., pH) and stabilization by dispersant (e.g., surfactants). In low viscosity dispersions, aggregation between nanotubes can therefore in- crease significantly with increased nanotube con...

  10. Wide band Fresnel super-resolution applied to capillary break up of viscoelastic fluids

    E-Print Network [OSTI]

    Fiscina, Jorge E; Sattler, Rainer; Wagner, Christian

    2013-01-01

    We report a technique based on Fresnel diffraction with white illumination that permits the resolution of capillary surface patterns of less than 100 nanometers. We investigate Rayleigh Plateaux like instability on a viscoelastic capillary bridge and show that we can overcome the resolution limit of optical microscopy. The viscoelastic filaments are approximately 20 microns thick at the end of the thinning process when the instability sets in. The wavy distortions grow exponentially in time and the pattern is resolved by an image treatment that is based on an approximation of the measured rising flank of the first Fresnel peak.

  11. Wide band Fresnel super-resolution applied to capillary break up of viscoelastic fluids

    E-Print Network [OSTI]

    Jorge E. Fiscina; Pierre Fromholz; Rainer Sattler; Christian Wagner

    2013-10-05

    We report a technique based on Fresnel diffraction with white illumination that permits the resolution of capillary surface patterns of less than 100 nanometers. We investigate Rayleigh Plateaux like instability on a viscoelastic capillary bridge and show that we can overcome the resolution limit of optical microscopy. The viscoelastic filaments are approximately 20 microns thick at the end of the thinning process when the instability sets in. The wavy distortions grow exponentially in time and the pattern is resolved by an image treatment that is based on an approximation of the measured rising flank of the first Fresnel peak.

  12. High-Efficiency, Wide-Band Three-Phase Rectifiers and Adaptive...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    combines low-voltage synchronous rectification with true three-phase, bridgeless power factor correction. This approach reduces conduction and switching losses in the...

  13. Investigation of band inversion in (Pb,Sn)Te alloys using ab initio calculations Xing Gao and Murray S. Daw

    E-Print Network [OSTI]

    Daw, Murray S.

    - ductors occurs at the point. Also, the order of the band gap Eg PbS Eg PbTe Eg PbSe and the order and the L6 - state forming the valence band edge. The change in Eg with alloying is ascribed to the dif is consistent with the observed variation of Eg with x and the change in the sign of the temperature

  14. Shear Banding of Complex Fluids

    E-Print Network [OSTI]

    Thibaut Divoux; Marc A. Fardin; Sébastien Manneville; Sandra Lerouge

    2015-03-13

    Even in simple geometries many complex fluids display non-trivial flow fields, with regions where shear is concentrated. The possibility for such shear banding has been known since several decades, but the recent years have seen an upsurge of studies offering an ever more precise understanding of the phenomenon. The development of new techniques to probe the flow on multiple scales and with increasing spatial and temporal resolution has opened the possibility for a synthesis of the many phenomena that could only have been thought of separately before. In this review, we bring together recent research on shear banding in polymeric and on soft glassy materials, and highlight their similarities and disparities.

  15. Extended investigation of superdeformed bands in {sup 151,152}Tb nuclei

    SciTech Connect (OSTI)

    Robin, J.; Byrski, Th.; Duchene, G.; Beck, F. A.; Curien, D.; Dubray, N.; Dudek, J.; Courtin, S.; Dorvaux, O.; France, G. de; Gall, B.; Joshi, P.; Nourredine, A.; Pachoud, E.; Piqueras, I.; Vivien, J. P.; Gozdz, A.; Odahara, A.; Schunck, N.; Adimi, N.

    2008-01-15

    A detailed study of known and new SD bands in Tb isotopes has been performed with the use of the EUROBALL IV {gamma}-ray array. The high-statistics data set has allowed for the extension of known SD bands at low and high spins by new {gamma}-ray transitions. These transitions, as it turns out, correspond to the rotational frequencies where the principal superdeformed gaps (Z=66,N=86) close giving rise to up- or down-bending mechanisms. This enables to attribute the underlying theoretical configurations with much higher confidence as compared to the previous identifications. Five new SD bands have been discovered, three of them assigned to the {sup 152}Tb and the two others to the {sup 151}Tb nuclei. Nuclear mean-field calculations have been used to interpret the structure of known SD bands as well as of the new ones in terms of nucleonic configurations.

  16. Dynamic Beam Shaping Using a Dual-Band Metasurface-Inspired Electronically Tunable Reflectarray Antenna

    E-Print Network [OSTI]

    Tayebi, Amin; Paladhi, Pavel Roy; Udpa, Lalita; Udpa, Satish; Rothwell, Edward

    2015-01-01

    An electronically reconfigurable dual-band-reflectarray antenna is presented in this paper. The tunable unit cell, a ring loaded square patch with a single varactor diode connected across the gap between the ring and the patch, is modeled using both a full-wave solver and an equivalent circuit. The parameters of the equivalent circuit are calculated independently of the simulation and experiment using analysis techniques employed in frequency selective surfaces. The reflection phase of the proposed unit cell is shown to provide an excellent phase range of 335$^{\\circ}$ in F band and 340$^{\\circ}$ in S band. Results from the analysis are used to design and build a 10x10 element reflectarray antenna. The high tuning phase range of each element allows the fabricated reflectarray to demonstrate a very broad steering range of up to $\\pm$60$^{\\circ}$ in both frequency bands.

  17. Engine piston having an insulating air gap

    DOE Patents [OSTI]

    Jarrett, Mark Wayne (Washington, IL); Hunold,Brent Michael (Apex, NC)

    2010-02-02

    A piston for an internal combustion engine has an upper crown with a top and a bottom surface, and a lower crown with a top and a bottom surface. The upper crown and the lower crown are fixedly attached to each other using welds, with the bottom surface of the upper crown and the top surface of the lower crown forming a mating surface. The piston also has at least one centrally located air gap formed on the mating surface. The air gap is sealed to prevent substantial airflow into or out of the air gap.

  18. Chiral gap effect in curved space

    E-Print Network [OSTI]

    Antonino Flachi; Kenji Fukushima

    2015-05-29

    We discuss a new type of QCD phenomenon induced in curved space. In the QCD vacuum, a mass-gap of Dirac fermions is attributed to the spontaneous breaking of chiral symmetry. If the curvature is positive large, the chiral condensate melts but a chiral invariant mass-gap can still remain, which we name the chiral gap effect in curved space. This leads to decoupling of quark deconfinement which implies a view of black holes surrounded by a first-order QCD phase transition.

  19. Interconnection-Wide Transmission Planning Initiative - Meeting...

    Energy Savers [EERE]

    Recovery Act Interconnection Transmission Planning Interconnection-Wide Transmission Planning Initiative - Meeting Calendars Interconnection-Wide Transmission Planning...

  20. 50 IEEE TRANSACTIONS ON MAGNETICS, VOL. 40, NO. 1, JANUARY 2004 Analytical Method for Predicting the Air-Gap Flux of

    E-Print Network [OSTI]

    Mi, Chunting "Chris"

    the Air-Gap Flux of Interior-Type Permanent-Magnet Machines Chunting Mi, Senior Member, IEEE, Mariano method to calcu- late the air-gap magnetic flux of interior-type permanent-magnet (IPM) machines taking INTERIOR-TYPE permanent-magnet (IPM) motors are used in a wide range of industrial applications due

  1. Wide field of view telescope

    DOE Patents [OSTI]

    Ackermann, Mark R. (Albuquerque, NM); McGraw, John T. (Placitas, NM); Zimmer, Peter C. (Albuquerque, NM)

    2008-01-15

    A wide field of view telescope having two concave and two convex reflective surfaces, each with an aspheric surface contour, has a flat focal plane array. Each of the primary, secondary, tertiary, and quaternary reflective surfaces are rotationally symmetric about the optical axis. The combination of the reflective surfaces results in a wide field of view in the range of approximately 3.8.degree. to approximately 6.5.degree.. The length of the telescope along the optical axis is approximately equal to or less than the diameter of the largest of the reflective surfaces.

  2. The History of Cranfills Gap ISD 

    E-Print Network [OSTI]

    Rudd, Charla J

    2013-05-06

    afforded sufficient education, community members took risks financially to establish and maintain the school. The reform movement to standardize education at the dawn of the Industrial Revolution propelled Cranfills Gap into providing a local high school...

  3. Going Deep vs. Going Wide

    Broader source: Energy.gov [DOE]

    Going Deep vs. Going Wide, from the Residential Energy Efficiency Solutions Conference 2012. Provides an overview on the progress of four energy efficiency programs: Clean Energy Works Oregon, Efficiency Maine, Energy Upgrade California Flex Path, and EcoHouse Loan Program.

  4. SOFTWAREENGINEERING The World Wide Web

    E-Print Network [OSTI]

    Whitehead, James

    SOFTWAREENGINEERING The World Wide Web Distributed Authoring and Versioning working group on the Web. WEBDAV: IETF Standard for Collaborative Authoring on the Web E. JAMES WHITEHEAD, JR. University remains to be done. What if instead you could simply edit Web documents (or any Web resource) in place

  5. Light transmission through a triangular air gap

    E-Print Network [OSTI]

    Silvania A. Carvalho; Stefano De Leo

    2013-05-31

    Due to the recent interest in studying propagation of light through triangular air gaps, we calculate, by using the analogy between optics and quantum mechanics and the multiple step technique, the transmissivity through a triangular air gap surrounded by an homogeneous dielectric medium. The new formula is then compared with the formula used in literature. Starting from the qualitative and quantitative differences between these formulas, we propose optical experiments to test our theoretical results.

  6. Gap between jets at the LHC

    SciTech Connect (OSTI)

    Royon, Christophe

    2013-04-15

    We describe a NLL BFKL calculation implemented in the HERWIG MC of the gap between jets cross section, that represent a test of BFKL dynamics. We compare the predictions with recent measurements at the Tevatron and present predictions for the LHC. We also discuss the interesting process of looking for gap between jets in diffractive events when protons are detected in the ATLAS Forward Physics (AFP) detectors.

  7. Technical Standards, MACCS2, Gap Analysis - May 3, 2004 | Department...

    Office of Environmental Management (EM)

    MACCS2, Gap Analysis - May 3, 2004 Technical Standards, MACCS2, Gap Analysis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: MACCS2 Gap Analysis The MACCS2...

  8. Technical Standards, ALOHA-Gap Analysis - May 3, 2004 | Department...

    Office of Environmental Management (EM)

    ALOHA-Gap Analysis - May 3, 2004 Technical Standards, ALOHA-Gap Analysis - May 3, 2004 May 3, 2004 DOE-EH-4.2.1.3-ALOHA-Gap Analysis, Software Quality Assurance Improvement Plan:...

  9. The Space Between: Superconductor Energy Gap Structures | The...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    energy gap-an energy range forbidden to electrons. CeCoIn5 is believed to have an energy-momentum structure with d-wave gap symmetry. This d-wave gap symmetry is shaped...

  10. THE PAL 5 STAR STREAM GAPS

    SciTech Connect (OSTI)

    Carlberg, R. G.; Hetherington, Nathan [Department of Astronomy and Astrophysics, University of Toronto, Toronto, ON M5S 3H4 (Canada); Grillmair, C. J., E-mail: carlberg@astro.utoronto.ca, E-mail: hetherington@astro.utoronto.ca, E-mail: carl@ipac.caltech.edu [Spitzer Science Center, 1200 E. California Blvd., Pasadena, CA 91125 (United States)

    2012-11-20

    Pal 5 is a low-mass, low-velocity-dispersion, globular cluster with spectacular tidal tails. We use the Sloan Digital Sky Survey Data Release 8 data to extend the density measurements of the trailing star stream to 23 deg distance from the cluster, at which point the stream runs off the edge of the available sky coverage. The size and the number of gaps in the stream are measured using a filter which approximates the structure of the gaps found in stream simulations. We find 5 gaps that are at least 99% confidence detections with about a dozen gaps at 90% confidence. The statistical significance of a gap is estimated using bootstrap resampling of the control regions on either side of the stream. The density minimum closest to the cluster is likely the result of the epicyclic orbits of the tidal outflow and has been discounted. To create the number of 99% confidence gaps per unit length at the mean age of the stream requires a halo population of nearly a thousand dark matter sub-halos with peak circular velocities above 1 km s{sup -1} within 30 kpc of the galactic center. These numbers are a factor of about three below cold stream simulation at this sub-halo mass or velocity but, given the uncertainties in both measurement and more realistic warm stream modeling, are in substantial agreement with the LCDM prediction.

  11. Growth and characterization of liquid phase epitaxial GaP layers 

    E-Print Network [OSTI]

    Kao, Yung-Chung

    1982-01-01

    Z HSVHd aInbIq BO NOIIVZIHBIDVBVHD GNV KIMO'80 GROWTH AND CHARACTERIZATION OF LIQUID PHASE EPITAXIAL GaP LAYERS A Thesis by YUNG-CHUNG KAO Approved as to style and content by: 04 (Chairman of Comm' tee) (Member) ~a m. December 1982 ABSTRACT... GROWTH AND CHARACTERIZATION OF LIQUID PHASE EPITAXIAL Gap LAYERS. (December 1982) Yung-Chung Kao, B. S. , National Tsing-Hua University Chairman of Advisory Committee: Dr. Ohannes Eknoyan Gallium Phosphide, a compound semiconductor with wide energy...

  12. Optical and electronic properties of some binary semiconductors from energy gaps

    E-Print Network [OSTI]

    Sunil K. Tripathy; Anup Pattanaik

    2015-10-14

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

  13. Optical and electronic properties of some binary semiconductors from energy gaps

    E-Print Network [OSTI]

    Sunil K. Tripathy; Anup Pattanaik

    2015-08-23

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

  14. Optical and electronic properties of some binary semiconductors from energy gaps

    E-Print Network [OSTI]

    Tripathy, Sunil K

    2015-01-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

  15. Band-to-band tunneling in silicon diodes and tunnel transistors

    E-Print Network [OSTI]

    Teherani, James Towfik

    2010-01-01

    This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure ...

  16. Summary of Gaps and Barriers for Implementing Residential Building...

    Energy Savers [EERE]

    Gaps and Barriers for Implementing Residential Building Energy Efficiency Strategies Summary of Gaps and Barriers for Implementing Residential Building Energy Efficiency Strategies...

  17. Code Gaps and Future Research Needs of Combustion Safety: Building...

    Energy Savers [EERE]

    Code Gaps and Future Research Needs of Combustion Safety: Building America Expert Meeting Update Code Gaps and Future Research Needs of Combustion Safety: Building America Expert...

  18. Bridging the Gap between Fundamental Physics and Chemistry and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for HCCI Engines Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for...

  19. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  20. Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

    SciTech Connect (OSTI)

    Shih, Chun-Hsing Dang Chien, Nguyen

    2014-01-28

    Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors.

  1. Annual Banding Summary Rio Mesa Center

    E-Print Network [OSTI]

    Tipple, Brett

    , 2014. Head bander: Laura Doll. Banding volunteers: Jason Socci, Christopher Henderson and Jenna Mc ­ October 9th , 2014. Head bander: Laura Doll. Banding volunteers: Alan Moss and Kaitlin Harrigan. Sixteen

  2. Magnetism and interaction-induced gap opening in graphene with vacancies or hydrogen adatoms: Quantum Monte Carlo study

    E-Print Network [OSTI]

    Ulybyshev, M V

    2015-01-01

    We study electronic properties of graphene with finite concentration of vacancies or other resonant scatterers by a straightforward lattice Quantum Monte Carlo calculations. Taking into account realistic long-range Coulomb interaction we calculate distribution of spin density associated to midgap states and demonstrate antiferromagnetic ordering. Energy gap are open due to the interaction effects, both in the bare graphene spectrum and in the vacancy/impurity bands. In the case of 5 % concentration of resonant scatterers the latter gap is estimated as 0.7 eV and 1.1 eV for graphene on boron nitride and freely suspended graphene, respectively.

  3. Magnetism and interaction-induced gap opening in graphene with vacancies or hydrogen adatoms: Quantum Monte Carlo study

    E-Print Network [OSTI]

    M. V. Ulybyshev; M. I. Katsnelson

    2015-05-22

    We study electronic properties of graphene with finite concentration of vacancies or other resonant scatterers by a straightforward lattice Quantum Monte Carlo calculations. Taking into account realistic long-range Coulomb interaction we calculate distribution of spin density associated to midgap states and demonstrate antiferromagnetic ordering. Energy gaps are open due to the interaction effects, both in the bare graphene spectrum and in the vacancy/impurity bands. In the case of 5 % concentration of resonant scatterers the latter gap is estimated as 0.7 eV and 1.1 eV for graphene on boron nitride and freely suspended graphene, respectively.

  4. The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

    SciTech Connect (OSTI)

    Sahdan, Muhammad Fauzi; Darma, Yudi

    2015-04-16

    Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

  5. Banding in single crystals during plastic deformation

    E-Print Network [OSTI]

    Mahesh, Sivasambu

    Banding in single crystals during plastic deformation M. Arul Kumar a Sivasambu Mahesh a,b a. India. Abstract A rigid-plastic rate-independent crystal plasticity model capable of capturing band- ing such as dense dislocation walls. Key words: crystal plasticity, single crystal, macroscopic shear band, regular

  6. RRI-GBT MULTI-BAND RECEIVER: MOTIVATION, DESIGN, AND DEVELOPMENT

    SciTech Connect (OSTI)

    Maan, Yogesh; Deshpande, Avinash A.; Chandrashekar, Vinutha; Chennamangalam, Jayanth; Rao, K. B. Raghavendra; Somashekar, R.; Ezhilarasi, M. S.; Sujatha, S.; Kasturi, S.; Sandhya, P.; Duraichelvan, R.; Amiri, Shahram; Aswathappa, H. A.; Sarabagopalan, G.; Ananda, H. M.; Anderson, Gary; Bauserman, Jonah; Beaudet, Carla; Bloss, Marty; Barve, Indrajit V.; and others

    2013-01-15

    We report the design and development of a self-contained multi-band receiver (MBR) system, intended for use with a single large aperture to facilitate sensitive and high time-resolution observations simultaneously in 10 discrete frequency bands sampling a wide spectral span (100-1500 MHz) in a nearly log-periodic fashion. The development of this system was primarily motivated by need for tomographic studies of pulsar polar emission regions. Although the system design is optimized for the primary goal, it is also suited for several other interesting astronomical investigations. The system consists of a dual-polarization multi-band feed (with discrete responses corresponding to the 10 bands pre-selected as relatively radio frequency interference free), a common wide-band radio frequency front-end, and independent back-end receiver chains for the 10 individual sub-bands. The raw voltage time sequences corresponding to 16 MHz bandwidth each for the two linear polarization channels and the 10 bands are recorded at the Nyquist rate simultaneously. We present the preliminary results from the tests and pulsar observations carried out with the Robert C. Byrd Green Bank Telescope using this receiver. The system performance implied by these results and possible improvements are also briefly discussed.

  7. Variation in band offsets at ZnO/Sn:In2O3 (ITO) heterojunctions measured by x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Droubay, Timothy C.

    2012-07-01

    Rational design and optimization of efficient photovoltaics requires fundamental knowledge of both the materials properties of the individual components and the conduction and valence band alignments at the materials interfaces. Efficient collection of electrons photogenerated in the absorber material requires a small or zero conduction band offset at both the absorber/n-type semiconductor and the n-type semiconductor/electrode interfaces. Negative conduction band offsets result in an energy barrier to electron injection, while large positive conduction band offsets (a “cliff” arrangement) result in too much energy lost during injection. However, it is difficult to predict heterojunction band offsets from bulk materials properties. Experimental band alignments of semiconductor heterojunctions rarely conform to the Anderson model,1 which assumes the band alignments are determined solely by differences in the electron affinity of the two semiconductors. Chemical bonds at the heterojunction interface give rise to an interfacial dipole which influences the interfacial band alignment. Thus, the complex interplay between electron affinity differences, Fermi level matching, interface-induced gap states, and band bending determine heterojunction band alignments.2-5 Band alignments can also be modified by doping, point defects, or control of non-stoichiometry at the interface; since these parameters can be affected by processing conditions, they offer a mechanism to modify the band alignments of a given heterojunction system.

  8. Dynamics of regeneration gaps following harvest of aspen stands

    E-Print Network [OSTI]

    Macdonald, Ellen

    tremuloides Michx.). The pattern of gap development over time was determined from analysis of air photographs

  9. Multi-gap superfluidity in nuclear matter

    E-Print Network [OSTI]

    A. I. Akhiezer; A. A. Isayev; S. V. Peletminsky; A. A. Yatsenko

    2000-12-25

    It is shown that under lowering density or temperature a nucleon Fermi superfluid can undergo a phase transition to a new superfluid state corresponding to superposition of states with singlet-triplet (ST) and triplet-singlet (TS) pairing of nucleons (in spin and isospin spaces). Such states arise as a result of branching from one-gap solution of the self-consistent equations, describing ST pairing of nucleons. The density and temperature dependence of the order parameters for new two-gap solutions is determined in the model with Skyrme effective forces.

  10. Natural Gas Engine Development Gaps (Presentation)

    SciTech Connect (OSTI)

    Zigler, B.T.

    2014-03-01

    A review of current natural gas vehicle offerings is presented for both light-duty and medium- and heavy-duty applications. Recent gaps in the marketplace are discussed, along with how they have been or may be addressed. The stakeholder input process for guiding research and development needs via the Natural Gas Vehicle Technology Forum (NGVTF) to the U.S. Department of Energy and the California Energy Commission is reviewed. Current high-level natural gas engine development gap areas are highlighted, including efficiency, emissions, and the certification process.

  11. Homolumo gap from dynamical energy levels

    SciTech Connect (OSTI)

    Andric, I.; Jonke, L.; Jurman, D.; Nielsen, H. B.

    2009-11-15

    We introduce a dynamical matrix model where the matrix is interpreted as a Hamiltonian representing interaction of a bosonic system with a single fermion. We show how a system of second-quantized fermions influences the ground state of the whole system by producing a gap between the highest eigenvalue of the occupied single-fermion states and the lowest eigenvalue of the unoccupied single-fermion states. We describe the development of the gap in both the strong and weak coupling regimes, while for the intermediate coupling strength we expect formation of homolumo kinks.

  12. RESEARCH ARTICLE Broad-band versus narrow-band irradiance for estimating

    E-Print Network [OSTI]

    Klimley, A. Peter

    RESEARCH ARTICLE Broad-band versus narrow-band irradiance for estimating latitude by archival tags of irradiance to estimate the latitude of archival tags was evaluated. These tags are placed on fishes in order irradiance with and without a cosine collector and narrow-band irradiance of seven narrow bands with 50

  13. Bayesian fusion of multi-band image fusion Bayesian fusion of multi-band image fusion

    E-Print Network [OSTI]

    Tourneret, Jean-Yves

    Bayesian fusion of multi-band image fusion Bayesian fusion of multi-band image fusion Beyond for Latent Variables", Feb. 2-4 2015 1 / 64 #12;Bayesian fusion of multi-band image fusion Context Multi School "Search for Latent Variables", Feb. 2-4 2015 2 / 64 #12;Bayesian fusion of multi-band image fusion

  14. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  15. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces till a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.

  16. Superconducting gap evolution in overdoped BaFe?(As1-xPx)? single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-01

    We report on specific heat measurements on clean overdoped BaFe?(As1-xPx)? single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature ?r=C/T|T?0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave ? model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of ??~5.3 me V, corresponding to ??/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces tillmore »a value of ?? ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on ?r, all samples however show similar behavior [?r(H) - ?r (H = 0)? Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.« less

  17. Mobile Access of Wide-Spectrum Networks: Design, Deployment and Experimental Evaluation

    E-Print Network [OSTI]

    Knightly, Edward W.

    --Wireless networks increasingly utilize diverse spec- tral bands that exhibit vast differences in both transmissionMobile Access of Wide-Spectrum Networks: Design, Deployment and Experimental Evaluation Anastasios Giannoulis Paul Patras Edward W. Knightly Dept. of Electrical and Computer Engineering, Rice University

  18. Gapped spin Hamiltonian motivated by quantum teleportation

    E-Print Network [OSTI]

    Ari Mizel

    2014-10-07

    We construct a Hamiltonian whose ground state encodes a time-independent emulation of quan- tum teleportation. We calculate properties of the Hamiltonian, using exact diagonalization and a mean-field theory, and argue that it has a gap. The system exhibits an illuminating relationship to the well-known AKLT (Affleck, Lieb, Kennedy and Tasaki) model.

  19. FINAL REPORT ON GDE GAP CELL

    SciTech Connect (OSTI)

    Herman, D.; Summers, W.; Danko, E.

    2009-09-28

    A project has been undertaken to develop an electrochemical cell and support equipment for evaluation of a gas diffusion electrode-based, narrow-electrolyte-gap anode for SO{sub 2} oxidation in the hydrogen production cycle of the hybrid sulfur (HyS) process. The project supported the HyS development program at the Savannah River National Lab (SRNL). The benefits of using a gas diffusion electrode in conjunction with the narrow anolyte gap are being determined through electrochemical polarization testing under a variety conditions, and by comparison to results produced by SRNL and others using anode technologies that have no anolyte gap. These test results indicate that the NGA cell has low resistance suitable for use in the HyS electrolyzer, exhibits good efficiency at high current densities compared to the direct feed HyS electrolyzer, and indicates robust performance in extended testing over 65 hours. Seepage episodes were mostly caused by port clogging, which can be mitigated in future designs through minor modifications to the hardware. Significant reductions in sulfur crossover have not yet been demonstrated in the NGA configuration compared to in-house direct feed testing, but corroborative sulfur layer analysis is as yet incomplete. Further testing in a single-pass anolyte configuration is recommended for complete evaluation of steady-state electrochemical efficiency and SO{sub 2} crossover in the narrow gap configuration.

  20. THE DYNAMICS OF STAR STREAM GAPS

    SciTech Connect (OSTI)

    Carlberg, R. G., E-mail: carlberg@astro.utoronto.ca [Department of Astronomy and Astrophysics, University of Toronto, Toronto, ON M5S 3H4 (Canada)

    2013-10-01

    A massive object crossing a narrow stream of stars orbiting in the halo of the galaxy induces velocity changes both along and transverse to the stream that can lead to the development of a visible gap. For a stream narrow relative to its orbital radius, the stream crossing time is sufficiently short that the impact approximation can be used to derive the changes in angular momenta and radial actions along the star stream. The epicyclic approximation is used to calculate the evolution of the density of the stream as it orbits around in a galactic potential. Analytic expressions are available for a point mass, however, the general expressions are easily numerically evaluated for perturbing objects with arbitrary density profiles. With a simple allowance for the velocity dispersion of the stream, moderately warm streams can be modeled. The predicted evolution agrees well with the outcomes of simulations of stellar streams for streams with widths up to 1% of the orbital radius of the stream. The angular momentum distribution within the stream shears out gaps with time, further reducing the visibility of streams, although the size of the shear effect requires more detailed simulations that account for the creation of the stream. An illustrative model indicates that shear will set a lower limit of a few times the stream width for the length of gaps that persist. In general, the equations are useful for dynamical insights into the development of stream gaps and their measurement.

  1. SHEEP MOUNTAIN URANIUM PROJECT CROOKS GAP, WYOMING

    E-Print Network [OSTI]

    SHEEP MOUNTAIN URANIUM PROJECT CROOKS GAP, WYOMING US EPA Project Meeting April 7 2011April 7, 2011/Titan Uranium, VP Development · Deborah LebowAal/EPA Region 8 Air Program Introduction to Titan Uranium USA;PROJECT OVERVIEW ·Site Location·Site Location ·Fremont , Wyoming ·Existing Uranium Mine Permit 381C

  2. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM)

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  3. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  4. Chiral plasmon in gapped Dirac systems

    E-Print Network [OSTI]

    Kumar, Anshuman; Fung, Kin Hung; Hanson, George; Fang, Nicholas X; Low, Tony

    2015-01-01

    We study the electromagnetic response and surface electromagnetic modes in a generic gapped Dirac material under pumping with circularly polarized light. The valley imbalance due to pumping leads to a net Berry curvature, giving rise to a finite transverse conductivity. We discuss the appearance of nonreciprocal chiral edge modes, their hybridization and waveguiding in a nanoribbon geometry, and giant polarization rotation in nanoribbon arrays.

  5. VIMOS total transmission profiles for broad-band filters

    E-Print Network [OSTI]

    S. Mieske; M. Rejkuba; S. Bagnulo; C. Izzo; G. Marconi

    2007-04-13

    VIMOS is a wide-field imager and spectrograph mounted on UT3 at the VLT, whose FOV consists of four 7'x8' quadrants. Here we present the measurements of total transmission profiles -- i.e. the throughput of telescope + instrument -- for the broad band filters U, B, V, R, I, and z for each of its four quadrants. Those measurements can also be downloaded from the public VIMOS web-page. The transmission profiles are compared with previous estimates from the VIMOS consortium.

  6. Narrow-band optical transmission of metallic nanoslit arrays

    SciTech Connect (OSTI)

    Sun Zhijun; Yang Ying; Zuo Xiaoliu

    2012-10-22

    Metallic nanoslit arrays usually demonstrate wide transmission bands for transverse-magnetic-polarized incidence light. Here, we show that by introducing multi-dielectric layers underneath the metallic structure layer on the substrate, a narrow peak is formed, whose bandwidth can be down to a few nanometers. Three types of resonance modes in the region under the metal layer are identified responsible for the formation of the peak, i.e., a two-dimensional cavity resonance mode, which supports optical transmission, and two in-plane hybrid surface plasmon resonance modes locating on both sides of the peak that suppresses the transmission. Such structures can be applied in advanced photonic devices.

  7. Ka-Band ARM Zenith Radar (KAZR) Instrument Handbook

    SciTech Connect (OSTI)

    Widener, K; Bharadwaj, N; Johnson, K

    2012-03-06

    The Ka-band ARM zenith radar (KAZR) is a zenith-pointing Doppler cloud radar operating at approximately 35 GHz. The KAZR is an evolutionary follow-on radar to ARM's widely successful millimeter-wavelength cloud radar (MMCR). The main purpose of the KAZR is to provide vertical profiles of clouds by measuring the first three Doppler moments: reflectivity, radial Doppler velocity, and spectra width. At the sites where the dual-polarization measurements are made, the Doppler moments for the cross-polarization channel are also available. In addition to the moments, velocity spectra are also continuously recorded for each range gate.

  8. WHY DO DIFFERENCES BETWEEN STATE-MEASURED ACHIEVEMENT GAPS AND NATIONALLY-MEASURED ACHIEVEMENT GAPS EXIST?

    E-Print Network [OSTI]

    Courtney, Christina Leigh

    2014-08-31

    of difference, the differential quotient, is determined. For the purposes of this dissertation, I calculated the reported achievement gaps between white and black fourth graders for the years 2005, 2007, and 2009 on the individual state reading and math...

  9. Engineering Dilute Nitride Semiconductor Alloys for Intermediate Band Solar Cells

    E-Print Network [OSTI]

    Luce, Alexander Vallejo

    2015-01-01

    Shockley-Queisser limit 2 Intermediate band solar cells 2.1for viable intermediate band solar cells . . . . 2.6for intermediate band solar cell. (a) Schematic band diagram

  10. A Multiband Generalization of the Analysis of Variance Period Estimation Algorithm and the Effect of Inter-band Observing Cadence on Period Recovery Rate

    E-Print Network [OSTI]

    Mondrik, Nicholas; Marshall, Jennifer L

    2015-01-01

    We present a new method of extending the single band Analysis of Variance period estimation algorithm to multiple bands. We use SDSS Stripe 82 RR Lyrae to show that in the case of low number of observations per band and non-simultaneous observations, improvements in period recovery rates of up to $\\approx$60\\% are observed. We also investigate the effect of inter-band observing cadence on period recovery rates. We find that using non-simultaneous observation times between bands is ideal for the multiband method, and using simultaneous multiband data is only marginally better than using single band data. These results will be particularly useful in planning observing cadences for wide-field astronomical imaging surveys such as LSST. They also have the potential to improve the extraction of transient data from surveys with few ($\\lesssim 30$) observations per band across several bands, such as the Dark Energy Survey.

  11. X-BAND KLYSTRON DEVELOPMENT AT SLAC

    SciTech Connect (OSTI)

    Vlieks, Arnold E.; /SLAC

    2009-08-03

    The development of X-band klystrons at SLAC originated with the idea of building an X-band Linear Collider in the late 1980's. Since then much effort has been expended in developing a reliable X-band Power source capable of delivering >50 MW RF power in pulse widths >1.5 {micro}s. I will report on some of the technical issues and design strategies which have led to the current SLAC klystron designs.

  12. Soboba Band of Luiseno Indians- 2011 Project

    Broader source: Energy.gov [DOE]

    The Soboba Band of Luiseno Indians would like to begin to focus on renewable sources for electricity and to actively target lowering the energy usage of the community.

  13. Multi-band high efficiency power amplifier

    E-Print Network [OSTI]

    Besprozvanny, Randy-Alexander Randolph

    2011-01-01

    power levels associated with the design objective. There are two switchingPower Gain and PAE CHAPTER 8 Multi-Band Shunt Switching Networks The previous design

  14. Chemical potential and the gap equation

    E-Print Network [OSTI]

    Huan Chen; Wei Yuan; Lei Chang; Yu-Xin Liu; Thomas Klahn; Craig D. Roberts

    2008-07-17

    In general the kernel of QCD's gap equation possesses a domain of analyticity upon which the equation's solution at nonzero chemical potential is simply obtained from the in-vacuum result through analytic continuation. On this domain the single-quark number- and scalar-density distribution functions are mu-independent. This is illustrated via two models for the gap equation's kernel. The models are alike in concentrating support in the infrared. They differ in the form of the vertex but qualitatively the results are largely insensitive to the Ansatz. In vacuum both models realise chiral symmetry in the Nambu-Goldstone mode and in the chiral limit, with increasing chemical potential, exhibit a first-order chiral symmetry restoring transition at mu~M(0), where M(p^2) is the dressed-quark mass function. There is evidence to suggest that any associated deconfinement transition is coincident and also of first-order.

  15. Negative band gap bowing in epitaxial InAsGaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates

    E-Print Network [OSTI]

    Hart, Gus

    As , alloy superlattices or quantum wells (InxGa1 xAs)p / InP q , and GaAs-embedded InAs quantum dots strained on InP or GaAs. We predict that while Ec(x) bows downward for relaxed bulk alloys, it bows upward constituents, bulk alloys InxGa1 xAs, epitaxial alloys that are coherently grown on a substrate InP or Ga

  16. Ultra wide-bandwidth micro energy harvester

    E-Print Network [OSTI]

    Hajati, Arman

    2011-01-01

    An ultra wide-bandwidth resonating thin film PZT MEMS energy harvester has been designed, modeled, fabricated and tested. It harvests energy from parasitic ambient vibration at a wide range of amplitude and frequency via ...

  17. Vehicle Codes and Standards: Overview and Gap Analysis

    SciTech Connect (OSTI)

    Blake, C.; Buttner, W.; Rivkin, C.

    2010-02-01

    This report identifies gaps in vehicle codes and standards and recommends ways to fill the gaps, focusing on six alternative fuels: biodiesel, natural gas, electricity, ethanol, hydrogen, and propane.

  18. Minding the Gap Makes for More Efficient Solar Cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Minding the Gap Makes for More Efficient Solar Cells Minding the Gap Makes for More Efficient Solar Cells Print Thursday, 19 December 2013 11:01 Using novel materials to develop...

  19. Africa-wide Great Ape Population Surveillance

    E-Print Network [OSTI]

    Schematic illustration of the data collection protocol for our nation-wide survey in Liberia © by Martha

  20. Radioactive Waste Management Complex Wide Review

    Office of Environmental Management (EM)

    This page intentionally blank i Complex-Wide Review of DOE's Radioactive Waste Management Summary Report TABLE OF CONTENTS Acronyms ......

  1. Apparatus for loading a band saw blade

    DOE Patents [OSTI]

    Reeves, S.R.

    1990-03-20

    A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials. 2 figs.

  2. Apparatus for loading a band saw blade

    DOE Patents [OSTI]

    Reeves, Steven R. (49 Williams Ave., West Valley, NY 14171)

    1990-01-01

    A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials.

  3. Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells

    E-Print Network [OSTI]

    Tian-Li Feng; Guang-Wei Deng; Yi Xia; Feng-Cheng Wu; Ping Cui; Hai-Ping Lan; Zhen-Yu Zhang

    2010-12-09

    The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells (IBSCs). Here we investigate the quantum efficiency of such IBSCs within two scenarios - with and without current extracted from the extended intermediate band. Using the ideal equivalent circuit model, we find that the maximum efficiency of 57% in the first scenario and 53% in the second are both much higher than the Shockley-Queisser limit from single gap solar cells. We also obtain various key quantities of the circuits, a useful step in realistic development of TiO2 based solar cells invoking device integration. These equivalent circuit results are also compared with the efficiencies obtained directly from consideration of electron transition between the energy bands, and both approaches reveal the intriguing existence of double peaks in the maximum quantum efficiency as a function of the relative location of IBs.

  4. Intelligent Assistants for Filling Critical Gaps in GIS

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    Intelligent Assistants for Filling Critical Gaps in GIS A Research Program April 1992 David Lanter, Intelligent Assistants for Filling Critical Gaps In GIS, was sponsored by Southern California Edison Company: · An analysis of critical gaps in current geographic information systems (GIS) that impede their use for spatial

  5. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Miao; Ming, Wenmei; Liu, Zheng; Wang, Zhengfei; Yao, Yugui; Liu, Feng

    2014-11-19

    For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ?0.5more »eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.« less

  6. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

    SciTech Connect (OSTI)

    Zhou, Miao; Ming, Wenmei; Liu, Zheng; Wang, Zhengfei; Yao, Yugui; Liu, Feng

    2014-11-19

    For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ?0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

  7. Nanophotonic hybridization of narrow atomic cesium resonances and photonic stop gaps of opaline nanostructures

    E-Print Network [OSTI]

    Harding, Philip J; Mosk, Allard P; Vos, Willem L

    2014-01-01

    We study a hybrid system consisting of a narrowband atomic optical resonance and the long-range periodic order of an opaline photonic nanostructure. To this end, we have infiltrated atomic cesium vapor in a thin silica opal photonic crystal. With increasing temperature, the frequencies of the opal's reflectivity peaks shift down by >20% due to chemical reduction of the silica. Simultaneously, the photonic bands and gaps shift relative to the fixed near-infrared cesium D1 transitions. As a result the narrow atomic resonances with high finesse (f/df=8E5) dramatically change shape from a usual dispersive shape at the blue edge of a stop gap, to an inverted dispersion lineshape at the red edge of a stop gap. The lineshape, amplitude, and off-resonance reflectivity are well modeled with a transfer-matrix model that includes the dispersion and absorption of Cs hyperfine transitions and the chemically-reduced opal. An ensemble of atoms in a photonic crystal is an intriguing hybrid system that features narrow defect-...

  8. Quantum chaos and thermalization in gapped systems

    SciTech Connect (OSTI)

    Rigol, Marcos [Department of Physics, Georgetown University, Washington, DC 20057 (United States); Santos, Lea F. [Department of Physics, Yeshiva University, New York, New York 10016 (United States)

    2010-07-15

    We investigate the onset of thermalization and quantum chaos in finite one-dimensional gapped systems of hard-core bosons. Integrability in these systems is broken by next-nearest-neighbor repulsive interactions, which also generate a superfluid to insulator transition. By employing full exact diagonalization, we study chaos indicators and few-body observables. We show that with increasing system size, chaotic behavior is seen over a broader range of parameters and, in particular, deeper into the insulating phase. Concomitantly, we observe that, as the system size increases, the eigenstate thermalization hypothesis extends its range of validity inside the insulating phase and is accompanied by the thermalization of the system.

  9. Turbine blade tip gap reduction system

    DOE Patents [OSTI]

    Diakunchak, Ihor S.

    2012-09-11

    A turbine blade sealing system for reducing a gap between a tip of a turbine blade and a stationary shroud of a turbine engine. The sealing system includes a plurality of flexible seal strips extending from a pressure side of a turbine blade generally orthogonal to the turbine blade. During operation of the turbine engine, the flexible seal strips flex radially outward extending towards the stationary shroud of the turbine engine, thereby reducing the leakage of air past the turbine blades and increasing the efficiency of the turbine engine.

  10. Judith Gap Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:onItron (California)JointJosephine, Texas:Gap Wind Farm Jump

  11. Point the Gap | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII JumpQuarterly SmartDB-2, Blue MountainSchoolPrairie Jump to: navigation,the Gap

  12. Product Design in Enterprise Wide Optimization

    E-Print Network [OSTI]

    Grossmann, Ignacio E.

    · Flexibility · Re-usable Recyclable The magical combination = a sum much greater than the parts 6 #12;Puncture · Polymer lab/Pilot Plant/Production · Analytical labs ­ Team discussion ­ along with Alberta counterparts · Simulation tools ­ Polymers/Plus ­ process modeling ­ Predici ­ reactor modeling ­ Gap analysis of commercial

  13. Prediction of a strain-induced conduction-band minimum in embedded quantum dots

    SciTech Connect (OSTI)

    Williamson, A.J.; Zunger, A.; Canning, A.

    1998-02-01

    Free-standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrated that when these dots are embedded coherently within a GaP barrier material, the effects of quantum confinement in conjunction with coherent strain suggest there will be a critical diameter of dot ({approx}60 {Angstrom}), above which the dot is direct, type I, and below which it is indirect, type II. However, the strain in the system acts to produce another conduction state with an even lower energy, in which electrons are localized in small pockets at the interface between the InP dot and the GaP barrier. Since this conduction state is GaP X{sub 1c} derived and the highest occupied valence state is InP, {Gamma} derived, the fundamental transition is predicted to be indirect in both real and reciprocal space ({open_quotes}type II{close_quotes}) for all dot sizes. This effect is peculiar to the strained dot, and is absent in the freestanding dot. {copyright} {ital 1998} {ital The American Physical Society}

  14. Extended Supersymmetry in Gapped and Superconducting Graphene

    E-Print Network [OSTI]

    V. K. Oikonomou

    2015-06-27

    In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the presence of a domain wall and also for superconducting graphene in the presence of a vortex. As we explicitly demonstrate, the gapped graphene electrons that are localized on the domain wall are associated with four $N=2$ one dimensional supersymmetries, with each pair combining to form an extended $N=4$ supersymmetry with non-trivial topological charges. The case of superconducting graphene is more involved, with the electrons localized on the vortex being associated with $n$ one dimensional supersymmetries, which in turn combine to form an $N=2n$ extended supersymmetry with no-trivial topological charges. As we shall prove, all supersymmetries are unbroken, a feature closely related to the number of the localized fermions and also to the exact form of the associated operators. In addition, the corresponding Witten index is invariant under compact and odd perturbations.

  15. Next Generation Nuclear Plant GAP Analysis Report

    SciTech Connect (OSTI)

    Ball, Sydney J; Burchell, Timothy D; Corwin, William R; Fisher, Stephen Eugene; Forsberg, Charles W.; Morris, Robert Noel; Moses, David Lewis

    2008-12-01

    As a follow-up to the phenomena identification and ranking table (PIRT) studies conducted recently by NRC on next generation nuclear plant (NGNP) safety, a study was conducted to identify the significant 'gaps' between what is needed and what is already available to adequately assess NGNP safety characteristics. The PIRT studies focused on identifying important phenomena affecting NGNP plant behavior, while the gap study gives more attention to off-normal behavior, uncertainties, and event probabilities under both normal operation and postulated accident conditions. Hence, this process also involved incorporating more detailed evaluations of accident sequences and risk assessments. This study considers thermal-fluid and neutronic behavior under both normal and postulated accident conditions, fission product transport (FPT), high-temperature metals, and graphite behavior and their effects on safety. In addition, safety issues related to coupling process heat (hydrogen production) systems to the reactor are addressed, given the limited design information currently available. Recommendations for further study, including analytical methods development and experimental needs, are presented as appropriate in each of these areas.

  16. Ultrafast all-optical switching of 3D photonic band gap crystals. T.G. Euser,1,*

    E-Print Network [OSTI]

    Vos, Willem L.

    , Minnesota 55455, USA. 4 Optoelectronics Research Centre (ORC), Tampere University of Technology, Tampere

  17. Pulse propagation in a linear and nonlinear diatomic periodic chain: effects of acoustic frequency band-gap

    E-Print Network [OSTI]

    Herbold, E. B.; Kim, J.; Nesterenko, V. F.; Wang, S. Y.; Daraio, C.

    2009-01-01

    as it was demonstrated for PTFE and stainless steel basedusing chains composed of PTFE spheres and stainless steela periodic arrangement of PTFE spheres and stainless steel

  18. Pulse propagation in a linear and nonlinear diatomic periodic chain: effects of acoustic frequency band-gap

    E-Print Network [OSTI]

    Herbold, E. B.; Kim, J.; Nesterenko, V. F.; Wang, S. Y.; Daraio, C.

    2009-01-01

    of nonlinear compression pulses in granular media. Prikl.Lindenberg, K. : Short-pulse dynamics in strongly nonlinearQ.M. : In?uence of loading pulse duration on dynamic load

  19. Forbidden Band Gaps in the Spin-Wave Spectrum of a Two-Dimensional Bicomponent Magnonic Crystal

    E-Print Network [OSTI]

    Grundler, Dirk

    del CNR (CNR-IOM), Unita` di Peru ia, c/o Dipartimento di Fisica, Via A. Pascoli, I-06123 Perugia periodically arranged in a dielectric film have been a powerful concept to induce the Bragg reflection of light

  20. Attenuation of optical transmission within the band gap of thin two-dimensional macroporous silicon photonic crystals

    E-Print Network [OSTI]

    Van Driel, Henry M.

    and illuminated from the wafer backside. If applied to a polished silicon wafer, the pore arrangement becomes address: Institute for Theory of Condensed Matter, University of Karlsruhe, P.O. Box 6980, D-76128

  1. Exploring Visible-Light-Responsive Photocatalysts for Water Splitting Based on Novel Band-gap Engineering Strategies

    E-Print Network [OSTI]

    Liu, Jikai

    2013-01-01

    B 4.3 C before and after photocatalysis reaction (top) and BC 2 before and after photocatalysis reaction (bottom). PageB 4.3 C before and after photocatalysis reaction (top) and B

  2. Light Exiting from Real Photonic Band Gap Crystals is Diffuse and Strongly Directional A. Femius Koenderink* and Willem L. Vos

    E-Print Network [OSTI]

    Vos, Willem L.

    , as it is governed by elastic scattering due to weak disorder [13]. In this Letter we report strongly frequency by this disorder in strongly photonic crystals. Peculiar non-Lambertian distributions occur as a function are tainted by unintentional disorder. Two- and three-dimensional photonic crystals alike suffer from

  3. Pulse propagation in a linear and nonlinear diatomic periodic chain: effects of acoustic frequency band-gap

    E-Print Network [OSTI]

    Herbold, E. B.; Kim, J.; Nesterenko, V. F.; Wang, S. Y.; Daraio, C.

    2009-01-01

    J. , Seppa, H. : Microelectromechanical delay lines withusing a slow-wave microelectromechanical delay line in a

  4. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  5. PHYSICAL REVIEW B 84, 245206 (2011) First-principles study of band gap engineering via oxygen vacancy doping

    E-Print Network [OSTI]

    Rappe, Andrew M.

    2011-01-01

    vacancies can play a beneficial role. For example, in solid oxide fuel cells, oxygen vacancies enable for photovoltaic applications.6­8 Despite the technological relevance of oxygen vacancies in ferroelectric solutions are fundamentally interesting and technologically important. However, experimental

  6. Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy

    E-Print Network [OSTI]

    Bar, M.

    2010-01-01

    OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BYchalcopyrite thin film solar cell absorbers significantlyof chalcopyrite thin film solar cell absorbers. excitation

  7. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Agency Input Regarding Electric Resource and Transmission Planning in the Texas Interconnection Interconnection-Wide Transmission Planning Initiative: Topic B, State Agency...

  8. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Environmental Management (EM)

    A, Interconnection-Level Analysis and Planning Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning A description of the...

  9. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Environmental Management (EM)

    Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Eastern...

  10. Interconnection-Wide Transmission Planning Initiative: Topic...

    Broader source: Energy.gov (indexed) [DOE]

    Western Interconnection under the Interconnection-Wide Transmission Planning Initiative, part of the American Recovery and Reinvestment Act. The fundamental purpose of the awards...

  11. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications U.S. Department of Energy Fuel Cell Technologies Office Presenters: Jeff...

  12. DFAS Wide-Area Workflow Issues

    Broader source: Energy.gov [DOE]

    Presentation covers the DFAS wide-area workflow issues and is given at the Spring 2011 Federal Utility Partnership Working Group (FUPWG) meeting.

  13. Recent experimental results from a long-pulse J-band relativistic klystron amplifier developmental effort

    SciTech Connect (OSTI)

    Kato, K.G.; Crouch, D.D.; Sar, D.R.; Speciale, R.A.; Carlsten, B.E.; Fazio, M.V.; Haynes, W.B.; Stringfield, R.M.

    1994-12-31

    Recent experimental results, supporting simulations, and design modeling are presented from a developmental effort to a produce a long pulse ({approximately}1{mu}s) J-band (5.85-8.2 GHz) relativistic klystron amplifier (RKA) of the high current NRL genealogy. This RKA is designed to operate at approximately 6.6 GHz, with a desired RF output {approximately}700 MW. Conversion of electron beam energy to microwave energy is obtained by a mock magnetically insulated coaxial converter which, in various incarnations, can be made to be either a cavity gap extractor or an inverse cathode.

  14. Quantum confinement, carrier dynamics and interfacial processes in nanostructured direct/indirect-gap semiconductor-glass composites

    SciTech Connect (OSTI)

    Joseph H. Simmons

    2002-08-13

    The behavior of semiconductor clusters precipitated in an insulated matrix was investigated. Semiconductor compositions of CdTe, Si and Ge were studies and the insulating matrix was amorphous SiO2. As a function of size, quantum confinement effects were observed in all three composite systems. However significant differences were observed between the direct-gap column 2-6 semiconductors and the indirect-gap column 4 semiconductors. As observed by others, the direct-gap 2-6 semiconductors showed a distinct saturation in the energy-gap blue shift with decreasing size. Theoretical studies using a 20-band k dot p calculation of the electronic and valence bands for a 3-dimensionally confined CdTe semiconductor showed that mixing of the conduction band states leads to a flattening of the central valley. This increases the electron mass drastically and saturates the size dependent blue shift in the bandgap. In contrast, the blue shift in the Si and Ge nanocrystals showed no sign of saturation and increased drastically with decreasing size. In fact, Si and Ge crystals were formed with blue shift values that moved the bandgap to the near UV region. We examined the absorption curves to determine whether the bandgap was direct or indirect in the quantum dots. The results are that the absorption shows an indirect gap for all but the smallest Si crystals and an indirect gap for all Ge crystals. Raman studies showed negligible size dependence due to a lack of phonon confinement in the matrix embedded clusters. Exciton saturation and recovery times were found to be very short (of the order of 400fs) and are the fastest reported for any quantum dot system. Work to examine the type of confinement obtained in a matrix that consists of a transparent conductor is under way. Studies of the photoinduced absorption change in GeSe glasses showed a significant effect of photodarkening, regardless of composition. The photodarkening effect appears to be composed of permanent and transient effects, presumed to be associated with photo-induced structural changes in the glass. The transient effects appear to have recovery times in at least two different time scales--one in minutes and one in less than a microsecond. Time-resolved studies are under way to determine the structural origin of each photodarkening effect.

  15. Control Banding and Nanotechnology Synergist

    SciTech Connect (OSTI)

    Zalk, D; Paik, S

    2009-12-15

    The average Industrial Hygienist (IH) loves a challenge, right? Okay, well here is one with more than a few twists. We start by going through the basics of a risk assessment. You have some chemical agents, a few workers, and the makings of your basic exposure characterization. However, you have no occupational exposure limit (OEL), essentially no toxicological basis, and no epidemiology. Now the real handicap is that you cannot use sampling pumps, cassettes, tubes, or any of the media in your toolbox, and the whole concept of mass-to-dose is out the window, even at high exposure levels. Of course, by the title, you knew we were talking about nanomaterials (NM). However, we wonder how many IHs know that this topic takes everything you know about your profession and turns it upside down. It takes the very foundations that you worked so hard in college and in the field to master and pulls it out from underneath you. It even takes the gold standard of our profession, the quantitative science of exposure assessment, and makes it look pretty darn rusty. Now with NM there is the potential to get some aspect of quantitative measurements, but the instruments are generally very expensive and getting an appropriate workplace personal exposure measurement can be very difficult if not impossible. The potential for workers getting exposures, however, is very real, as evidenced by a recent publication reporting worker exposures to polyacrylate nanoparticles in a Chinese factory (Song et al. 2009). With something this complex and challenging, how does a concept as simple as Control Banding (CB) save the day? Although many IHs have heard of CB, most of their knowledge comes from its application in the COSHH Essentials toolkit. While there is conflicting published research on COSHH Essentials and its value for risk assessments, almost all of the experts agree that it can be useful when no OELs are available (Zalk and Nelson 2008). It is this aspect of CB, its utility with uncertainty, that attracted international NM experts to recommend this qualitative risk assessment approach for NM. However, since their CB recommendation was only in theory, we took on the challenge of developing a working toolkit, the CB Nanotool (see Zalk et al. 2009 and Paik et al. 2008), as a means to perform a risk assessment and protect researchers at the Lawrence Livermore National Laboratory. While it's been acknowledged that engineered NM have potentially endless benefits for society, it became clear to us that the very properties that make nanotechnology so useful to industry could also make them dangerous to humans and the environment. Among the uncertainties and unknowns with NM are: the contribution of their physical structure to their toxicity, significant differences in their deposition and clearance in the lungs when compared to their parent material (PM), a lack of agreement on the appropriate indices for exposure to NM, and very little background information on exposure scenarios or populations at risk. Part of this lack of background information can be traced to the lack of risk assessments historically performed in the industry, with a recent survey indicating that 65% of companies working with NM are not doing any kind of NM-specific risk assessment as they focus on traditional PM methods for IH (Helland et al. 2009). The good news is that the amount of peer-reviewed publications that address environmental, health and safety aspects of NM has been increasing over the last few years; however, the percentage of these that address practical methods to reduce exposure and protect workers is orders of magnitude lower. Our intent in developing the CB Nanotool was to create a simplified approach that would protect workers while unraveling the mysteries of NM for experts and non-experts alike. Since such a large part of the toxicological effects of both the physical and chemical properties of NM were unknown, not to mention changing logarithmically as new NM research continues growing, we needed to account for this lack of information as part of the CB Nano

  16. ormon crickets and juvenile locusts form huge migratory bands --

    E-Print Network [OSTI]

    Gwynne, Darryl T.

    radiotelemetrytoovercometheseproblems. The mormon cricket, Anabrus simplex, is a flightless katydid6 , native to western North America migratory bands with that of individuals transplanted from the band to nearby sites; mormon- cricket bands

  17. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (? 3 photoanodes are fabricated with their bulkmore »heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.« less

  18. ISM band to U-NII band frequency transverter and method of frequency transversion

    DOE Patents [OSTI]

    Stepp, Jeffrey David (Grandview, MO); Hensley, Dale (Grandview, MO)

    2006-09-12

    A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz 6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

  19. ISM band to U-NII band frequency transverter and method of frequency transversion

    DOE Patents [OSTI]

    Stepp, Jeffrey David (Grandview, MO); Hensley, Dale (Grandview, MO)

    2006-04-04

    A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz-6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

  20. Whistler anisotropy instabilities as the source of banded chorus: Van Allen Probes observations and particle-in-cell simulations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Xiangrong; Cowee, Misa M.; Friedel, Reinhard H.; Funsten, Herbert O.; Gary, S. Peter; Hospodarsky, George B.; Kletzing, Craig; Kurth, William; Larsen, Brian A.; Liu, Kaijun; et al

    2014-10-22

    Magnetospheric banded chorus is enhanced whistler waves with frequencies ?r e, where ?e is the electron cyclotron frequency, and a characteristic spectral gap at ?r ? ?e/2. This paper uses spacecraft observations and two-dimensional particle-in-cell simulations in a magnetized, homogeneous, collisionless plasma to test the hypothesis that banded chorus is due to local linear growth of two branches of the whistler anisotropy instability excited by two distinct, anisotropic electron components of significantly different temperatures. The electron densities and temperatures are derived from Helium, Oxygen, Proton, and Electron instrument measurements on the Van Allen Probes A satellite during a bandedmore »chorus event on 1 November 2012. The observations are consistent with a three-component electron model consisting of a cold (a few tens of eV) population, a warm (a few hundred eV) anisotropic population, and a hot (a few keV) anisotropic population. The simulations use plasma and field parameters as measured from the satellite during this event except for two numbers: the anisotropies of the warm and the hot electron components are enhanced over the measured values in order to obtain relatively rapid instability growth. The simulations show that the warm component drives the quasi-electrostatic upper band chorus and that the hot component drives the electromagnetic lower band chorus; the gap at ~?e/2 is a natural consequence of the growth of two whistler modes with different properties.« less

  1. Engineering integrated pure narrow-band photon sources

    E-Print Network [OSTI]

    Enrico Pomarico; Bruno Sanguinetti; Clara I. Osorio; Harald Herrmann; Rob Thew

    2011-08-29

    Engineering and controlling well defined states of light for quantum information applications is of increasing importance as the complexity of quantum systems grows. For example, in quantum networks high multi-photon interference visibility requires properly devised single mode sources. In this paper we propose a spontaneous parametric down conversion source based on an integrated cavity-waveguide, where single narrow-band, possibly distinct, spectral modes for the idler and the signal fields can be generated. This mode selection takes advantage of the clustering effect, due to the intrinsic dispersion of the nonlinear material. In combination with a CW laser and fast detection, our approach provides a means to engineer a source that can efficiently generate pure photons, without filtering, that is compatible with long distance quantum communication. Furthermore, it is extremely flexible and could easily be adapted to a wide variety of wavelengths and applications.

  2. OPTICAL IMAGES AND SOURCE CATALOG OF AKARI NORTH ECLIPTIC POLE WIDE SURVEY FIELD

    SciTech Connect (OSTI)

    Jeon, Yiseul; Im, Myungshin; Lee, Induk [Center for the Exploration of the Origin of the Universe (CEOU), Astronomy Program, Department of Physics and Astronomy, Seoul National University, Shillim-Dong, Kwanak-Gu, Seoul 151-742 (Korea, Republic of); Ibrahimov, Mansur [Ulugh Beg Astronomical Institute, 33 Astronomicheskaya str., Tashkent, 100052 (Uzbekistan); Lee, Hyung Mok; Lee, Myung Gyoon, E-mail: ysjeon@astro.snu.ac.k, E-mail: mim@astro.snu.ac.k [Astronomy Program, FPRD, Department of Physics and Astronomy, Seoul National University, Shillim-Dong, Kwanak-Gu, Seoul 151-742 (Korea, Republic of)

    2010-09-15

    We present the source catalog and the properties of the B-, R-, and I-band images obtained to support the AKARI North Ecliptic Pole Wide (NEP-Wide) survey. The NEP-Wide is an AKARI infrared imaging survey of the north ecliptic pole covering a 5.8 deg{sup 2} area over 2.5-6 {mu}m wavelengths. The optical imaging data were obtained at the Maidanak Observatory in Uzbekistan using the Seoul National University 4k x 4k Camera on the 1.5 m telescope. These images cover 4.9 deg{sup 2} where no deep optical imaging data are available. Our B-, R-, and I-band data reach the depths of {approx}23.4, {approx}23.1, and {approx}22.3 mag (AB) at 5{sigma}, respectively. The source catalog contains 96,460 objects in the R band, and the astrometric accuracy is about 0.''15 at 1{sigma} in each R.A. and decl. direction. These photometric data will be useful for many studies including identification of optical counterparts of the infrared sources detected by AKARI, analysis of their spectral energy distributions from optical through infrared, and the selection of interesting objects to understand the obscured galaxy evolution.

  3. Modeling fluid flow in deformation bands with stabilized localization...

    Office of Scientific and Technical Information (OSTI)

    Modeling fluid flow in deformation bands with stabilized localization mixed finite elements. Citation Details In-Document Search Title: Modeling fluid flow in deformation bands...

  4. Sensitivity Analysis of the Gap Heat Transfer Model in BISON.

    SciTech Connect (OSTI)

    Swiler, Laura Painton; Schmidt, Rodney C.; Williamson, Richard; Perez, Danielle

    2014-10-01

    This report summarizes the result of a NEAMS project focused on sensitivity analysis of the heat transfer model in the gap between the fuel rod and the cladding used in the BISON fuel performance code of Idaho National Laboratory. Using the gap heat transfer models in BISON, the sensitivity of the modeling parameters and the associated responses is investigated. The study results in a quantitative assessment of the role of various parameters in the analysis of gap heat transfer in nuclear fuel.

  5. The Nuclear Pairing Gap -- How Low Can It Go?

    E-Print Network [OSTI]

    B. Alex Brown

    2013-08-16

    The pairing gap for $^{53}$Ca obtained from new experimental data on the masses of $^{52-54}$Ca has the smallest value yet observed. This is explained in the framework of the nuclear shell model with schematic and realistic Hamiltonians as being due to shell gaps around the low-$ j $ orbital $ 1p_{1/2} $. Minima in the pairing gaps for all nuclei are shown and discussed

  6. CHARACTERIZATION OF SEVEN ULTRA-WIDE TRANS-NEPTUNIAN BINARIES

    SciTech Connect (OSTI)

    Parker, Alex H. [Department of Astronomy, University of Victoria, Victoria, BC (Canada); Kavelaars, J. J. [Herzberg Institute of Astrophysics, National Research Council of Canada, Saanich, BC (Canada); Petit, Jean-Marc [Observatoire de Besancon, Besancon (France); Jones, Lynne [Department of Astronomy, University of Washington, Seattle, WA (United States); Gladman, Brett [Department of Astronomy, University of British Columbia, Vancouver, BC (Canada); Parker, Joel, E-mail: alexhp@uvic.ca [Southwest Research Institute, Boulder, CO (United States)

    2011-12-10

    The low-inclination component of the Classical Kuiper Belt is host to a population of extremely widely separated binaries. These systems are similar to other trans-Neptunian binaries (TNBs) in that the primary and secondary components of each system are of roughly equal size. We have performed an astrometric monitoring campaign of a sample of seven wide-separation, long-period TNBs and present the first-ever well-characterized mutual orbits for each system. The sample contains the most eccentric (2006 CH{sub 69}, e{sub m} = 0.9) and the most widely separated, weakly bound (2001 QW{sub 322}, a/R{sub H} {approx_equal} 0.22) binary minor planets known, and also contains the system with lowest-measured mass of any TNB (2000 CF{sub 105}, M{sub sys} {approx_equal} 1.85 Multiplication-Sign 10{sup 17} kg). Four systems orbit in a prograde sense, and three in a retrograde sense. They have a different mutual inclination distribution compared to all other TNBs, preferring low mutual-inclination orbits. These systems have geometric r-band albedos in the range of 0.09-0.3, consistent with radiometric albedo estimates for larger solitary low-inclination Classical Kuiper Belt objects, and we limit the plausible distribution of albedos in this region of the Kuiper Belt. We find that gravitational collapse binary formation models produce an orbital distribution similar to that currently observed, which along with a confluence of other factors supports formation of the cold Classical Kuiper Belt in situ through relatively rapid gravitational collapse rather than slow hierarchical accretion. We show that these binary systems are sensitive to disruption via collisions, and their existence suggests that the size distribution of TNOs at small sizes remains relatively shallow.

  7. FAQS Gap Analysis Qualification Card – General Technical Base

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  8. Combined Heat and Power: Connecting the Gap between Markets and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Combined Heat and Power: Connecting the Gap between Markets and Utility Interconnection and Tariff Practices (Part I) Susanne Brooks, Brent Elswick, and R. Neal Elliott March 2006...

  9. FAQS Gap Analysis Qualification Card – Nuclear Explosive Safety Study

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  10. FAQS Gap Analysis Qualification Card – Fire Protection Engineering

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  11. Catalysis by Design: Bridging the Gap between Theory and Experiments...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    between Theory and Experiments Catalysis by Design: Bridging the Gap between Theory and Experiments Poster presentation at the 2007 Diesel Engine-Efficiency & Emissions Research...

  12. Catalysis by Design: Bridging the Gap Between Theory and Experiments...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Between Theory and Experiments at Nanoscale Level Catalysis by Design: Bridging the Gap Between Theory and Experiments at Nanoscale Level Studies on a simple platinum-alumina...

  13. Energy Band Model Based on Effective Mass

    E-Print Network [OSTI]

    Viktor Ariel

    2012-09-06

    In this work, we demonstrate an alternative method of deriving an isotropic energy band model using a one-dimensional definition of the effective mass and experimentally observed dependence of mass on energy. We extend the effective mass definition to anti-particles and particles with zero rest mass. We assume an often observed linear dependence of mass on energy and derive a generalized non-parabolic energy-momentum relation. The resulting non-parabolicity leads to velocity saturation at high particle energies. We apply the energy band model to free relativistic particles and carriers in solid state materials and obtain commonly used dispersion relations and experimentally confirmed effective masses. We apply the model to zero rest mass particles in graphene and propose using the effective mass for photons. Therefore, it appears that the new energy band model based on the effective mass can be applied to relativistic particles and carriers in solid state materials.

  14. High power W-band klystrons

    SciTech Connect (OSTI)

    Caryotakis, George; Scheitrum, Glenn; Jongewaard, Erik; Vlieks, Arnold; Fowkes, Randy [Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States); Li, Jeff [University of California Davis, Davis, California 95616 (United States)

    1999-05-01

    The development of W-band klystrons is discussed. Modeling of the klystron performance predicts 100 kW output power from a single klystron. The permanent magnet focusing and small size of the circuit permit combination of multiple klystrons in a module. A six-klystron module in a single vacuum envelope is expected to produce 500 kW peak power and up to 5 kW average power. The critical issues in the W-band klystron development are the electron beam transport and the fabrication of the klystron circuit. Two microfabrication techniques, EDM and LIGA, are being evaluated to produce the W-band circuit. {copyright} {ital 1999 American Institute of Physics.}

  15. West Wide Programmatic Environmental Impact Statement Record...

    Open Energy Info (EERE)

    Reference LibraryAdd to library Legal Document- OtherOther: West Wide Programmatic Environmental Impact Statement Record of Decision (BLM)Legal Published NA Year Signed or Took...

  16. DOE-wide NEPA Contracting Update

    Broader source: Energy.gov [DOE]

    A DOE team is evaluating the offers received in response to a Request for Quotations to provide NEPA support services. The scope of the solicitation is similar to that of the DOE-wide NEPA support...

  17. Ultra-wide bandwidth piezoelectric energy harvesting

    E-Print Network [OSTI]

    Hajati, Arman

    Here, we present an ultra wide-bandwidth energy harvester by exploiting the nonlinear stiffness of a doubly clamped microelectromechanical systems (MEMSs) resonator. The stretching strain in a doubly clamped beam shows a ...

  18. Attributing Mental Properties to Wide Subjects 

    E-Print Network [OSTI]

    Butts, Evan

    2008-12-04

    Rob Wilson (2001) claims that mental properties are not attributable to wide subjects, despite the claims of authors like Clark and Chalmers (1998). I examine Wilson's objection and endeavor to demonstrate that Clark and Chalmers' account does...

  19. A Capacitor-Less Wide-Band Power Supply Rejection Low Drop-Out Voltage Regulator with Capacitance Multiplier 

    E-Print Network [OSTI]

    Wang, Mengde

    2014-05-22

    A Low Drop-Out (LDO) voltage regulator with both capacitor-less and high power supply rejection (PSR) bandwidth attributes is highly admired for an integrated power management system of mobile electronics. The capacitor-less feature is demanded...

  20. Integrated, Multi-Scale Characterization of Imbibition and Wettability Phenomena Using Magnetic Resonance and Wide-Band Dielectric Measurements

    SciTech Connect (OSTI)

    Mukul M. Sharma; Steven L. Bryant; Carlos Torres-Verdin; George Hirasaki

    2007-09-30

    The petrophysical properties of rocks, particularly their relative permeability and wettability, strongly influence the efficiency and the time-scale of all hydrocarbon recovery processes. However, the quantitative relationships needed to account for the influence of wettability and pore structure on multi-phase flow are not yet available, largely due to the complexity of the phenomena controlling wettability and the difficulty of characterizing rock properties at the relevant length scales. This project brings together several advanced technologies to characterize pore structure and wettability. Grain-scale models are developed that help to better interpret the electric and dielectric response of rocks. These studies allow the computation of realistic configurations of two immiscible fluids as a function of wettability and geologic characteristics. These fluid configurations form a basis for predicting and explaining macroscopic behavior, including the relationship between relative permeability, wettability and laboratory and wireline log measurements of NMR and dielectric response. Dielectric and NMR measurements have been made show that the response of the rocks depends on the wetting and flow properties of the rock. The theoretical models can be used for a better interpretation and inversion of standard well logs to obtain accurate and reliable estimates of fluid saturation and of their producibility. The ultimate benefit of this combined theoretical/empirical approach for reservoir characterization is that rather than reproducing the behavior of any particular sample or set of samples, it can explain and predict trends in behavior that can be applied at a range of length scales, including correlation with wireline logs, seismic, and geologic units and strata. This approach can substantially enhance wireline log interpretation for reservoir characterization and provide better descriptions, at several scales, of crucial reservoir flow properties that govern oil recovery.

  1. Cabazon Band of Mission Indians- 2011 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Cabazon Band of Mission Indians' long-range goals are to become energy self-sufficient, foster economic diversity, grow jobs, and improve the well-being of members of the tribe as well as those in its region of Southern California.

  2. Optimizing Energy Consumption in Terahertz Band Nanonetworks

    E-Print Network [OSTI]

    Weigle, Michele

    1 Optimizing Energy Consumption in Terahertz Band Nanonetworks Shahram Mohrehkesh, IEEE Student the maximum utilization of harvested energy in perpetual wireless nanonetworks, where nanonodes communicate of energy. Compounding the problem, the arrival of energy is not constant, but follows a stochastic process

  3. X-Band Photoinjector Beam Dynamics

    SciTech Connect (OSTI)

    Zhou, Feng; Adolphsen, Chris; Ding, Yuantao; Li, Zenghai; Vlieks, Arnold; /SLAC

    2011-12-13

    SLAC is studying the feasibility of using an X-band RF photocathode gun to produce low emittance bunches for applications such as a mono-energetic MeV {gamma} ray source (in collaboration with LLNL) and a photoinjector for a compact FEL. Beam dynamics studies are being done for a configuration consisting of a 5.5-cell X-band gun followed by several 53-cell high-gradient X-band accelerator structures. A fully 3D program, ImpactT, is used to track particles taking into account space charge forces, short-range longitudinal and transverse wakefields, and the 3D rf fields in the structures, including the quadrupole component of the couplers. The effect of misalignments of the various elements, including the drive-laser, gun, solenoid and accelerator structures, are evaluated. This paper presents these results and estimates of the expected bunch emittance vs cathode gradient, and the effects of mixing between the fundamental and off-frequency longitudinal modes. An X-band gun at SLAC has been shown to operate reliably with a 200 MV/m acceleration gradient at the cathode, which is nearly twice the 115 MV/m acceleration gradient in the LCLS gun. The higher gradient should roughly balance the space charge related transverse emittance growth for the same bunch charge but provide a 3-4 times shorter bunch length. The shorter length would make the subsequent bunch compression easier and allow for a more effective use of emittance exchange. Such a gun can also be used with an X-band linac to produce a compact FEL or g ray source that would require rf sources of only one frequency for beam generation and acceleration. The feasibility of using an X-band rf photocathode gun and accelerator structures to generate high quality electron beams for compact FELs and g ray sources is being studied at SLAC. Results from the X-band photoinjector beam dynamics studies are reported in this paper.

  4. Generalized parton distributions and rapidity gap survival in exclusive diffractive pp scattering

    SciTech Connect (OSTI)

    Leonid Frankfurt; Charles Hyde-Wright; Mark Strikman; Christian Weiss

    2007-03-01

    We propose a new approach to the problem of rapidity gap survival (RGS) in the production of high-mass systems (H = dijet, heavy quarkonium, Higgs boson) in double-gap exclusive diffractive pp scattering, pp-->p + (gap) + H + (gap) + p. It is based on the idea that hard and soft interactions proceed over widely different time- and distance scales and are thus approximately independent. The high-mass system is produced in a hard scattering process with exchange of two gluons between the protons. Its amplitude is calculable in terms of the gluon generalized parton distributions (GPDs) in the protons, which can be measured in J= production in exclusive ep scattering. The hard scattering process is modified by soft spectator interactions, which we calculate in a model-independent way in terms of the pp elastic scattering amplitude. Contributions from inelastic intermediate states are suppressed. A simple geometric picture of the interplay of hard and soft interactions in diffraction is obtained. The onset of the black-disk limit in pp scattering at TeV energies strongly suppresses diffraction at small impact parameters and is the main factor in determining the RGS probability. Correlations between hard and soft interactions (e.g. due to scattering from the long-range pion field of the proton, or due to possible short-range transverse correlations between partons) further decrease the RGS probability. We also investigate the dependence of the diffractive cross section on the transverse momenta of the final-state protons (''diffraction pattern''). By measuring this dependence one can perform detailed tests of the interplay of hard and soft interactions, and even extract information about the gluon GPD in the proton. Such studies appear to be feasible with the planned forward detectors at the LHC.

  5. Wide field imaging of distant clusters

    E-Print Network [OSTI]

    T. Treu

    2004-08-05

    Wide field imaging is key to understanding the build-up of distant clusters and their galaxy population. By focusing on the so far unexplored outskirts of clusters, where infalling galaxies first hit the cluster potential and the hot intracluster medium, we can help separate cosmological field galaxy evolution from that driven by environment. I present a selection of recent advancements in this area, with particular emphasis on Hubble Space Telescope wide field imaging, for its superior capability to deliver galaxy morphologies and precise shear maps of distant clusters.

  6. Wide Electrochemical Window Solvents - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentricNCubicthe FOIA? The FOIA,DepartmentWhoWhy: TheWideWide

  7. Whistler anisotropy instabilities as the source of banded chorus: Van Allen Probes observations and particle-in-cell simulations

    SciTech Connect (OSTI)

    Fu, Xiangrong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Cowee, Misa M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Friedel, Reinhard H. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Funsten, Herbert O. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gary, S. Peter [Space Science Institute, Boulder, CO (United States); Hospodarsky, George B. [Univ. of Iowa, Iowa City, IA (United States). Dept. of Physics and Astronomy.; Kletzing, Craig [Univ. of Iowa, Iowa City, IA (United States). Dept. of Physics and Astronomy.; Kurth, William [Univ. of Iowa, Iowa City, IA (United States). Dept. of Physics and Astronomy.; Larsen, Brian A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Liu, Kaijun [Auburn Univ., Auburn, AL (United States). Dept. of Physics.; MacDonald, Elizabeth A. [NASA/Goddard Space Flight Center, Greenbelt, MD (United States); Min, Kyungguk [Auburn Univ., Auburn, AL (United States). Dept. of Physics.; Reeves, Geoffrey D. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Skoug, Ruth M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Winske, Dan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-10-22

    Magnetospheric banded chorus is enhanced whistler waves with frequencies ?r < ?e, where ?e is the electron cyclotron frequency, and a characteristic spectral gap at ?r ? ?e/2. This paper uses spacecraft observations and two-dimensional particle-in-cell simulations in a magnetized, homogeneous, collisionless plasma to test the hypothesis that banded chorus is due to local linear growth of two branches of the whistler anisotropy instability excited by two distinct, anisotropic electron components of significantly different temperatures. The electron densities and temperatures are derived from Helium, Oxygen, Proton, and Electron instrument measurements on the Van Allen Probes A satellite during a banded chorus event on 1 November 2012. The observations are consistent with a three-component electron model consisting of a cold (a few tens of eV) population, a warm (a few hundred eV) anisotropic population, and a hot (a few keV) anisotropic population. The simulations use plasma and field parameters as measured from the satellite during this event except for two numbers: the anisotropies of the warm and the hot electron components are enhanced over the measured values in order to obtain relatively rapid instability growth. The simulations show that the warm component drives the quasi-electrostatic upper band chorus and that the hot component drives the electromagnetic lower band chorus; the gap at ~?e/2 is a natural consequence of the growth of two whistler modes with different properties.

  8. Critical Heat Flux in Inclined Rectangular Narrow Gaps

    SciTech Connect (OSTI)

    Jeong J. Kim; Yong H. Kim; Seong J. Kim; Sang W. Noh; Kune Y. Suh; Joy L. Rempe; Fan-Bill Cheung; Sang B. Kim

    2004-06-01

    In light of the TMI-2 accident, in which the reactor vessel lower head survived the attack by molten core material, the in-vessel retention strategy was suggested to benefit from cooling the debris through a gap between the lower head and the core material. The GAMMA 1D (Gap Apparatus Mitigating Melt Attack One Dimensional) tests were conducted to investigate the critical heat flux (CHF) in narrow gaps with varying surface orientations. The CHF in an inclined gap, especially in case of the downward-facing narrow gap, is dictated by bubble behavior because the departing bubbles are squeezed. The orientation angle affects the bubble layer and escape of the bubbles from the narrow gap. The test parameters include gap sizes of 1, 2, 5 and 10 mm and the open periphery, and the orientation angles range from the fully downward-facing (180o) to the vertical (90o) position. The 15 ×35 mm copper test section was electrically heated by the thin film resistor on the back. The heater assembly was installed to the tip of the rotating arm in the heated water pool at the atmospheric pressure. The bubble behavior was photographed utilizing a high-speed camera through the Pyrex glass spacer. It was observed that the CHF decreased as the surface inclination angle increased and as the gap size decreased in most of the cases. However, the opposing results were obtained at certain surface orientations and gap sizes. Transition angles, at which the CHF changed in a rapid slope, were also detected, which is consistent with the existing literature. A semi-empirical CHF correlation was developed for the inclined narrow rectangular channels through dimensional analysis. The correlation provides with best-estimate CHF values for realistically assessing the thermal margin to failure of the lower head during a severe accident involving relocation of the core material.

  9. Identifications of FIRST radio sources in the NOAO Deep-Wide Field Survey

    E-Print Network [OSTI]

    K. EL Bouchefry; C. M. Cress

    2007-02-05

    In this paper we present the results of an optical and near infrared identification of 514 radio sources from the FIRST survey (Faint Images of the Radio Sky Survey at Twenty centimeters) with a flux-density limit of 1 mJy in the NOAO Deep-Wide Field Survey (NDWFS) Bootes field. Using optical (Bw, R, I) and K band data with approximate limits of Bw ~ 25.5mag, R ~ 25.8 mag, I ~25.5 mag and K~19.4 mag, optical counterparts have been identified for 378 of 514 FIRST radio sources. This corresponds to an identification rate of 34% in four bands (BwRIK), 60% in optical bands (BwRI) and 74% in I band. Photometric redshifts for these sources have been computed using the hyperz code. The inclusion of quasar template spectra in hyperz is investigated. We note that the photometric data are, in many cases, best matched to templates with very short star-formation timescales and the inferred ages of identified galaxies depend strongly on the assumptions about the star-formation timescale. The redshifts obtained are fairly consistent with those expected from the K-z relation for brighter radio sources but there is more scatter in the K-z diagram at z<1.

  10. Quantum states and specific heat of low-density He gas adsorbed within the carbon nanotube interstitial channels: Band structure effects and potential dependence

    E-Print Network [OSTI]

    A. Siber; H. Buljan

    2002-09-13

    We calculate the energy-band structure of a He atom trapped within the interstitial channel between close-packed nanotubes within a bundle and its influence on the specific heat of the adsorbed gas. A robust prediction of our calculations is that the contribution of the low-density adsorbed gas to the specific heat of the nanotube material shows pronounced nonmonotonic variations with temperature. These variations are shown to be closely related to the band gaps in the adsorbate density of states.

  11. Orc Notation Structured Wide-Area Programming

    E-Print Network [OSTI]

    Misra, Jayadev

    Orc Notation Structured Wide-Area Programming Jayadev Misra Department of Computer Science University of Texas at Austin http://orc.csres.utexas.edu April 12, 2010 Rennes, France #12;Orc Notation hierarchical structure. #12;Orc Notation Orc · Goal: Internet scripting language. · Next: Component integration

  12. X-Band RF Gun Development

    SciTech Connect (OSTI)

    Vlieks, Arnold; Dolgashev, Valery; Tantawi, Sami; Anderson, Scott; Hartemann, Fred; Marsh, Roark; /LLNL, Livermore

    2012-06-22

    In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

  13. S-Band Loads for SLAC Linac

    SciTech Connect (OSTI)

    Krasnykh, A.; Decker, F.-J.; /SLAC; LeClair, R.; /INTA Technologies, Santa Clara

    2012-08-28

    The S-Band loads on the current SLAC linac RF system were designed, in some cases, 40+ years ago to terminate 2-3 MW peak power into a thin layer of coated Kanthal material as the high power absorber [1]. The technology of the load design was based on a flame-sprayed Kanthal wire method onto a base material. During SLAC linac upgrades, the 24 MW peak klystrons were replaced by 5045 klystrons with 65+ MW peak output power. Additionally, SLED cavities were introduced and as a result, the peak power in the current RF setup has increased up to 240 MW peak. The problem of reliable RF peak power termination and RF load lifetime required a careful study and adequate solution. Results of our studies and three designs of S-Band RF load for the present SLAC RF linac system is discussed. These designs are based on the use of low conductivity materials.

  14. Permanent magnet focused X-band photoinjector

    DOE Patents [OSTI]

    Yu, David U. L. (Rancho Palos Verdes, CA); Rosenzweig, James (Los Angeles, CA)

    2002-09-10

    A compact high energy photoelectron injector integrates the photocathode directly into a multicell linear accelerator with no drift space between the injection and the linac. High electron beam brightness is achieved by accelerating a tightly focused electron beam in an integrated, multi-cell, X-band rf linear accelerator (linac). The photoelectron linac employs a Plane-Wave-Transformer (PWT) design which provides strong cell-to-cell coupling, easing manufacturing tolerances and costs.

  15. The Negative Parity Bands in $^{156}$Gd

    E-Print Network [OSTI]

    Jentschel, Michael; Curien, Dominique; Dudek, Jerzy; Haas, Florent

    2014-01-01

    The high flux reactor of the Institut Laue-Langevin is the world most intense neutron source for research. Using the ultra high-resolution crystal spectrometers GAMS installed at the in-pile target position H6/H7 it is possible to measure nuclear state lifetimes using the Gamma Ray Induced Recoil (GRID) technique. In bent crystal mode, the spectrometers allow to perform spectroscopy with a dynamic range of up to six orders magnitude. At a very well collimated external neutron beam it is possible to install a highly efficient germanium detector array to obtain coincidences and angular correlations. The mentioned techniques were used to study the first two negative parity bands in $^{156}$Gd. These bands have been in the focus of interest since they seem to show signatures of a tetrahedral symmetry. A surprisingly high B(E2) value of about 1000 W.u. for the $4^- \\rightarrow 2^-$ transition was discovered. It indicates that the two first negative parity bands cannot be considered to be signature partners.

  16. Broad Band Photon Harvesting Biomolecules for Photovoltaics

    E-Print Network [OSTI]

    P. Meredith; B. J. Powell; J. Riesz; R. Vogel; D. Blake; I. Kartini; G. Will; S. Subianto

    2004-06-04

    We discuss the key principles of artificial photosynthesis for photovoltaic energy conversion. We demonstrate these principles by examining the operation of the so-called "dye sensitized solar cell" (DSSC) - a photoelectrochemical device which simulates the charge separation process across a nano-structured membrane that is characteristic of natural systems. These type of devices have great potential to challenge silicon semiconductor technology in the low cost, medium efficiency segment of the PV market. Ruthenium charge transfer complexes are currently used as the photon harvesting components in DSSCs. They produce a relatively broad band UV and visible response, but have long term stability problems and are expensive to manufacture. We suggest that a class of biological macromolecules called the melanins may be suitable replacements for the ruthenium complexes. They have strong, broad band absorption, are chemically and photochemically very stable, can be cheaply and easily synthesized, and are also bio-available and bio-compatible. We demonstrate a melanin-based regenerative solar cell, and discuss the key properties that are necessary for an effective broad band photon harvesting system.

  17. W-Band Sheet Beam Klystron Simulation

    SciTech Connect (OSTI)

    Colby, E.R.; Caryotakis, G.; Fowkes, W.R.; /SLAC; Smithe, D.N.; /Mission Res., Newington

    2005-09-12

    With the development of ever higher energy particle accelerators comes the need for compactness and high gradient, which in turn require very high frequency high power rf sources. Recent development work in W-band accelerating techniques has spurred the development of a high-power W-band source. Axisymmetric sources suffer from fundamental power output limitations (P{sub sat} {approx} {lambda}{sup 2}) brought on by the conflicting requirements of small beam sizes and high beam current. The sheet beam klystron allows for an increase in beam current without substantial increase in the beam current density, allowing for reduced cathode current densities and focusing field strengths. Initial simulations of a 20:1 aspect ratio sheet beam/cavity interaction using the 3 dimensional particle-in-cell code Magic3D have demonstrated a 35% beam-power to RF power extraction efficiency. Calculational work and numerical simulations leading to a prototype W-band sheet beam klystron will be presented, together with preliminary cold test structure studies of a proposed RF cavity geometry.

  18. W-band sheet beam klystron simulation

    SciTech Connect (OSTI)

    Colby, E.R.; Caryotakis, G.; Fowkes, W.R. [Stanford Linear Accelerator Center, 2575 Sand Hill Rd., Menlo Park, California 94025 (United States); Smithe, D.N. [Mission Research Corporation, 8560 Cinderbed Road, Ste. 700, Newington, Virginia 22122 (United States)

    1999-05-01

    With the development of ever higher energy particle accelerators comes the need for compactness and high gradient, which in turn require very high frequency high power rf sources. Recent development work in W-band accelerating techniques has spurred the development of a high-power W-band source. Axisymmetric sources suffer from fundamental power output limitations (P{sub sat}{approximately}{lambda}{sup 2}) brought on by the conflicting requirements of small beam sizes and high beam current. The sheet beam klystron allows for an increase in beam current without substantial increase in the beam current density, allowing for reduced cathode current densities and focussing field strengths. Initial simulations of a 20:1 aspect ratio sheet beam/cavity interaction using the 3 dimensional particle-in-cell code Magic3D have demonstrated a 35{percent} beam-power to RF power extraction efficiency. Calculational work and numerical simulations leading to a prototype W-band sheet beam klystron will be presented, together with preliminary cold test structure studies of a proposed RF cavity geometry. {copyright} {ital 1999 American Institute of Physics.}

  19. Identification of more interstellar C60+ bands

    E-Print Network [OSTI]

    Walker, Gordon; Maier, John; Campbell, Ewen

    2015-01-01

    Based on gas-phase laboratory spectra at 6 K, Campbell et al. (2015) confirmed that the diffuse interstellar bands (DIBs) at 9632.7 and 9577.5A are due to absorption by the fullerene ion C60+. They also reported the detection of two other, weaker bands at 9428.5 and 9365.9A. These lie in spectral regions heavily contaminated by telluric water vapour lines. We acquired CFHT ESPaDOnS spectra of HD183143 close to the zenith and chopped with a nearby standard to correct for the telluric line absorption which enabled us to detect a DIB at 9365.9A of relative width and strength comparable to the laboratory absorption. There is a DIB of similar strength and FWHM at 9362.5A. A stellar emission feature at 9429A prevented detection of the 9428.5A band. However, a CFHT archival spectrum of HD169454, where emission is absent at 9429A, clearly shows the 9428.5A DIB with the expected strength and width. These results further confirm C60+ as a DIB carrier.

  20. Direction Dependent Effects In Wide-Field Wideband Full Stokes Radio Imaging

    E-Print Network [OSTI]

    Jagannathan, Preshanth; Rau, Urvashi; Taylor, Russ

    2014-01-01

    Synthesis imaging in radio astronomy is affected by instrumental and atmospheric effects which introduce direction-dependent (DD) gains.The antenna power pattern varies both as a function of time and frequency. The broad band time varying nature of the antenna power pattern when not corrected leads to gross errors in full Stokes imaging and flux estimation. In this poster we explore the errors that arise in image deconvolution while not accounting for the time and frequency dependence of the antenna power pattern. Simulations were conducted with the wide-band full Stokes power pattern of the Karl G. Jansky Very Large Array (VLA) antennas to demonstrate the level of errors arising from direction-dependent gains and their non-neglegible impact on upcoming sky surveys such as the VLASS. DD corrections through hybrid projection algorithms are computationally expensive to perform. A highly parallel implementation through high performance computing architectures is the only feasible way of applying these correction...

  1. Topological gap states of semiconducting armchair graphene ribbons

    E-Print Network [OSTI]

    Jeong, Y H; Yang, S -R Eric

    2015-01-01

    In semiconducting armchair graphene ribbons a chiral lattice deformation can induce pairs of topological gap states with opposite energies. Near the critical value of the deformation potential these kink and antikink states become almost degenerate with zero energy and have a fractional charge one-half. Such a semiconducting armchair ribbon represents a one-dimensional topological insulator with nearly zero energy end states. Using data collapse of numerical results we find that the shape of the kink displays an anomalous power-law dependence on the width of the local lattice deformation. We suggest that these gap states may be probed in optical measurements. However, "metallic" armchair graphene ribbons with a gap induced by many-electron interactions have no gap states and are not topological insulators.

  2. Fact #560: March 2, 2009 The Transportation Petroleum Gap

    Broader source: Energy.gov [DOE]

    In 1989 the transportation sector petroleum consumption surpassed U.S. petroleum production for the first time, creating a gap that must be met with imports of petroleum. By the year 2030,...

  3. Fact #687: August 8, 2011 The Transportation Petroleum Gap

    Broader source: Energy.gov [DOE]

    In 1989 the transportation sector petroleum consumption surpassed U.S. petroleum production for the first time, creating a gap that must be met with imports of petroleum. By the year 2035,...

  4. Fact #609: February 8, 2010 The Transportation Petroleum Gap

    Office of Energy Efficiency and Renewable Energy (EERE)

    In 1989 the transportation sector petroleum consumption surpassed U.S. petroleum production for the first time, creating a gap that must be met with imports of petroleum. By the year 2035,...

  5. Optimization Online - Optimality gap of constant-order policies ...

    E-Print Network [OSTI]

    Linwei Xin

    2014-09-07

    Sep 7, 2014 ... Optimality gap of constant-order policies decays exponentially in the lead time for ... For the special case of exponentially distributed demand, we further ... Category 1: Applications -- OR and Management Sciences (Supply ...

  6. Vacuum gaps with small tunnel currents at large electric field...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacuum gaps with small tunnel currents at large electric field and its potential applications for energy storage, charge storage and power supplies. Friday, May 27, 2011 - 4:00pm...

  7. Governing the gap: Forging safe science through relational regulation

    E-Print Network [OSTI]

    Huising, Ruthanne

    Designed to close the ubiquitous gap between law on the books and law in action, management systems locate the standard setting and implementation of regulation within the regulated organization itself. Despite efforts to ...

  8. Interface Ferroelectric Transition near the Gap-Opening Temperature...

    Office of Scientific and Technical Information (OSTI)

    Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-DopedSrTiO3Substrate Citation Details In-Document Search This...

  9. Topological gap states of semiconducting armchair graphene ribbons

    E-Print Network [OSTI]

    Y. H. Jeong; S. C. Kim; S. -R. Eric Yang

    2015-05-31

    In semiconducting armchair graphene ribbons a chiral lattice deformation can induce pairs of topological gap states with opposite energies. Near the critical value of the deformation potential these kink and antikink states become almost degenerate with zero energy and have a fractional charge one-half. Such a semiconducting armchair ribbon represents a one-dimensional topological insulator with nearly zero energy end states. Using data collapse of numerical results we find that the shape of the kink displays an anomalous power-law dependence on the width of the local lattice deformation. We suggest that these gap states may be probed in optical measurements. However, "metallic" armchair graphene ribbons with a gap induced by many-electron interactions have no gap states and are not topological insulators.

  10. Interface Ferroelectric Transition near the Gap-Opening Temperature...

    Office of Scientific and Technical Information (OSTI)

    Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate Citation Details In-Document Search This content...

  11. Permanent-magnet-less machine having an enclosed air gap

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-02-07

    A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

  12. Permanent-magnet-less machine having an enclosed air gap

    DOE Patents [OSTI]

    Hsu, John S.

    2013-03-05

    A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

  13. Proper Sustainability: GAP Grant Proposal Work Plan Strategy Webinar

    Office of Energy Efficiency and Renewable Energy (EERE)

    In this webinar I will discuss the new GAP grant requirements for tribal environmental programs and strategies for crafting a work plan that focuses on capacity building activities.  My goal is to...

  14. Corrigendum Corrigendum to "Gap junction-mediated electrical transmission

    E-Print Network [OSTI]

    Rash, John E.

    Corrigendum Corrigendum to "Gap junction-mediated electrical transmission: Regulatory mechanisms, show variability in the electrical conductance of the synaptic transmission, even though the pre chemical component. Thus, electrical synapses from neighboring club endings coexist at different degrees

  15. Excitonic gap, phase transition, and quantum Hall effect in graphene

    E-Print Network [OSTI]

    V. P. Gusynin; V. A. Miransky; S. G. Sharapov; I. A. Shovkovy

    2006-11-23

    We suggest that physics underlying the recently observed removal of sublattice and spin degeneracies in graphene in a strong magnetic field describes a phase transition connected with the generation of an excitonic gap. The experimental form of the Hall conductivity is reproduced and the main characteristics of the dynamics are described. Predictions of the behavior of the gap as a function of temperature and a gate voltage are made.

  16. Computation of radiative heat transport across a nanoscale vacuum gap

    SciTech Connect (OSTI)

    Budaev, Bair V. Bogy, David B.

    2014-02-10

    Radiation heat transport across a vacuum gap between two half-spaces is studied. By consistently applying only the fundamental laws of physics, we obtain an algebraic equation that connects the temperatures of the half-spaces and the heat flux between them. The heat transport coefficient generated by this equation for such structures matches available experimental data for nanoscale and larger gaps without appealing to any additional specific mechanisms of energy transfer.

  17. Hydrogeologic Model for the Gable Gap Area, Hanford Site

    SciTech Connect (OSTI)

    Bjornstad, Bruce N.; Thorne, Paul D.; Williams, Bruce A.; Last, George V.; Thomas, Gregory S.; Thompson, Michael D.; Ludwig, Jami L.; Lanigan, David C.

    2010-09-30

    Gable Gap is a structural and topographic depression between Gable Mountain and Gable Butte within the central Hanford Site. It has a long and complex geologic history, which includes tectonic uplift synchronous with erosional downcutting associated with the ancestral Columbia River during both Ringold and Cold Creek periods, and by the later Ice Age (mostly glacial Lake Missoula) floods. The gap was subsequently buried and partially backfilled by mostly coarse-grained, Ice Age flood deposits (Hanford formation). Erosional remnants of both the Ringold Formation and Cold Creek unit locally underlie the high-energy flood deposits. A large window exists in the gap where confined basalt aquifers are in contact with the unconfined suprabasalt aquifer. Several paleochannels, of both Hanford and Ringold Formation age, were eroded into the basalt bedrock across Gable Gap. Groundwater from the Central Plateau presently moves through Gable Gap via one or more of these shallow paleochannels. As groundwater levels continue to decline in the region, groundwater flow may eventually be cut off through Gable Gap.

  18. WORLD WIDE WEB 2.3 Web

    E-Print Network [OSTI]

    Zabulis, Xenophon

    H I2 C WORLD WIDE WEB 1996 #12; 1. 1.1 I2 Cnet 1.2 1.3 WWW 2 2.1 2.2 2.3 Web 2.4 3 O 3.1 3.2 3.3 3.4 O Web browsers. 4. 4.1 4.2 4 File System 9.6 10 A. Web browser HTT . B A #12

  19. Project Reports for Campo Band of Mission Indians- 2010 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Campo Band of Mission Indians ("Band") goal is to develop a 300 MW wind energy project ("Kumeyaay Wind II") in two phases over the next two to five years.

  20. Engineering Dilute Nitride Semiconductor Alloys for Intermediate Band Solar Cells

    E-Print Network [OSTI]

    Luce, Alexander Vallejo

    2015-01-01

    Shockley-Queisser limit 2 Intermediate band solar cells 2.1with a realistic solar spectrum . . . . . . . . . . . 2.3for viable intermediate band solar cells . . . . 2.6

  1. Investigating the book-tax income gap : factors which affect the gap and details regarding its most significant component

    E-Print Network [OSTI]

    Seidman, Jeri

    2008-01-01

    (cont.) In total, my thesis suggests that recent changes in the book-tax income gap may be exogenous and transitory, due to changes to the calculation of book income, general business conditions or other factors which ...

  2. Larry Band Voit Gilmore Distinguished Professor in Geography

    E-Print Network [OSTI]

    McLaughlin, Richard M.

    Larry Band Voit Gilmore Distinguished Professor in Geography Carolina Department of Environment and Natural Resources to improve the process

  3. Design of a Ka-band gyro-TWT amplifier for broadband operation

    SciTech Connect (OSTI)

    Alaria, Mukesh Kumar; Sinha, A. K. [Microwave Tubes Area, CSIR-Central Electronics Engineering Research Institute, Pilani 333031 (India)] [Microwave Tubes Area, CSIR-Central Electronics Engineering Research Institute, Pilani 333031 (India); Choyal, Y. [Department of Physics, Devi Ahilya Vishwavidyalaya, Indore (India)] [Department of Physics, Devi Ahilya Vishwavidyalaya, Indore (India)

    2013-07-15

    In this paper, the design of a Ka-band periodically ceramic loaded gyro-TWT amplifier has been carried out. The design predict that the interaction structure can produce more than 80 kW output power, 50 dB saturated gain, and 3 dB bandwidth for 65 kV and 5 A electron beam with velocity ratio (?) of 1.2. This paper describes the design and simulation of a high performance 35 GHz TE{sub 01} mode gyro-TWT that applies the same technique of employing a periodic dielectric loaded interaction structure to achieve stability and wide bandwidth. The design of input coupler with loaded interaction structure for Ka-band Gyro-TWT has been carried out using Ansoft hfss. The return loss (S{sub 11}) and transmission loss (S{sub 21}) of the Ka-band gyro-TWT input coupler have been found to be ?27.3 dB and ?0.05 dB, respectively. The design of output window for Ka-band Gyro-TWT has been carried out using cst microwave studio.

  4. Excitation of Banded Whistler Waves in the Magnetosphere

    SciTech Connect (OSTI)

    Gary, S. Peter; Liu, Kaijun; Winske, Dan

    2012-07-13

    Banded whistler waves can be generated by the whistler anisotropy instability driven by two bi-Maxwellian electron components with T{sub {perpendicular}}/T{sub {parallel}} > 1 at different T{sub {parallel}} For typical magnetospheric condition of 1 < {omega}{sub e}/{Omega}{sub e} < 5 in regions associated with strong chorus, upper-band waves can be excited by anisotropic electrons below {approx} 1 keV, while lower-band waves are excited by anisotropic electrons above {approx} 10 keV. Lower-band waves are generally field-aligned and substantially electromagnetic, while upper-band waves propagate obliquely and have quasi-electrostatic fluctuating electric fields. The quasi-electrostatic feature of upper-band waves suggests that they may be more easily identified in electric field observations than in magnetic field observations. Upper-band waves are liable to Landau damping and the saturation level of upperband waves is lower than lower-band waves, consistent with observations that lower-band waves are stronger than upper-band waves on average. The oblique propagation, the lower saturation level, and the more severe Landau damping together would make upper-band waves more tightly confined to the geomagnetic equator (|{lambda}{sub m}| < {approx}10{sup o}) than lower-band waves.

  5. Anisotropy of strong pinning in multi-band superconductors

    E-Print Network [OSTI]

    Boyer, Edmond

    pinning in multi-band superconductors 2 1. Introduction The multi-band nature of superconductivity in iron the anisotropy of superconducting parameters in the iron-based superconductors. In particular, Kidzun et al. [23Anisotropy of strong pinning in multi-band superconductors C.J. van der Beek, M. Konczykowski

  6. An X-band overmoded relativistic klystron

    SciTech Connect (OSTI)

    Xiao, Renzhen; Chen, Changhua; Li, Jiawei; Bai, Xianchen [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Deng, Yuqun [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

    2014-11-15

    An X-band overmoded relativistic klystron is proposed, the operation mode of which is the TM{sub 02} mode. The drift tube could not cut off the TM{sub 01} mode; isolating the buncher cavity from the input cavity is achieved by introducing a sectional RF lossy material. Microwaves are extracted from the modulated electron beam using a cylindrical waveguide, rather than a coaxial waveguide; thereby, the output structure is significantly simplified. Particle-in-cell simulations show that microwaves with power of 1.28?GW and frequency of 9.30?GHz can be obtained, corresponding to an efficiency of 32% and relative bandwidth of about 8%.

  7. W-Band Sheet Beam Klystron Design

    SciTech Connect (OSTI)

    Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.a Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.; /SLAC

    2011-11-11

    Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons [1]. Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

  8. Universal EUV in-band intensity detector

    DOE Patents [OSTI]

    Berger, Kurt W.

    2004-08-24

    Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

  9. Simplicial cohomology of band semigroup algebras

    E-Print Network [OSTI]

    Choi, Yemon; White, Michael C

    2010-01-01

    We establish simplicial triviality of the convolution algebra $\\ell^1(S)$, where $S$ is a band semigroup. This generalizes results of the first author [Glasgow Math. J. 2005, Houston J. Math. 2010]. To do so, we show that the cyclic cohomology of this algebra vanishes in all odd degrees, and is isomorphic in even degrees to the space of continuous traces on $\\ell^1(S)$. Crucial to our approach is the use of the structure semilattice of $S$, and the associated grading of $S$, together with an inductive normalization procedure in cyclic cohomology; the latter technique appears to be new, and its underlying strategy may be applicable to other convolution algebras of interest.

  10. Radiative Heating in Underexplored Bands Campaign (RHUBC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMassR&D100 Winners * Impacts on GlobalRachel Ruggirello RachelRadiationRadiative Bands

  11. On fluctuations of eigenvalues of random band matrices

    E-Print Network [OSTI]

    Mariya Shcherbina

    2015-04-22

    We consider the fluctuation of linear eigenvalue statistics of random band $n\\times n$ matrices whose entries have the form $\\mathcal{M}_{ij}=b^{-1/2}u^{1/2}(|i-j|)\\tilde w_{ij}$ with i.i.d. $w_{ij}$ possessing the $(4+\\varepsilon)$th moment, where the function $u$ has a finite support $[-C^*,C^*]$, so that $M$ has only $2C_*b+1$ nonzero diagonals. The parameter $b$ (called the bandwidth) is assumed to grow with $n$ in a way that $b/n\\to 0$. Without any additional assumptions on the growth of $b$ we prove CLT for linear eigenvalue statistics for a rather wide class of test functions. Thus we improve and generalize the results of the previous papers [8] and [11], where CLT was proven under the assumption $n>>b>>n^{1/2}$. Moreover, we develop a method which allows to prove automatically the CLT for linear eigenvalue statistics of the smooth test functions for almost all classical models of random matrix theory: deformed Wigner and sample covariance matrices, sparse matrices, diluted random matrices, matrices with heavy tales, etc.

  12. World Wide Web( WWW ) Greenberg Web

    E-Print Network [OSTI]

    Shirai, Kiyoaki

    WWW 1 World Wide Web( WWW ) WWW Web Web Greenberg Web 30% [1] Web WWW Web WWW [2] [3] WWW 2 2.1 WWW Web 1 1: · 1 · 1 #12;· Web Web 2: 2 2 Web 2.2 Web Web URL URL .html / Yahoo http://headlines.yahoo.co.jp/hl?a=2 0011205-00000101-yom-soci URL onmouseover on- mouseout JavaScript 2.1 2.3 URL URL 1. Web HTML 2. 1

  13. Concave nanomagnets with widely tunable anisotropy

    DOE Patents [OSTI]

    Lambson, Brian; Gu, Zheng; Carlton, David; Bokor, Jeffrey

    2014-07-01

    A nanomagnet having widely tunable anisotropy is disclosed. The disclosed nanomagnet is a magnetic particle with a convex shape having a first magnetically easy axis. The convex shape is modified to include at least one concavity to urge a second magnetically easy axis to form substantially offset from the first magnetically easy axis. In at least one embodiment, the convex shape is also modified to include at least one concavity to urge a second magnetically easy axis to form with a magnetic strength substantially different from the first magnetically easy axis.

  14. Wide Bandgap Semiconductors: Pursuing the Promise

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-Sessions |discussed how saving energy could betold youExamplesAofOurWide Bandgap

  15. Efficient Wide Area Data Transfer Protocols

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES Science NetworkMediator Effects of ProtonationEfficient Wide

  16. Plant-wide Systems | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1,an R7-Compatible CumulativeSavingsPlant-wide Systems

  17. INFOGRAPHIC: Wide Bandgap Semiconductors | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (JournalvivoHighHussein KhalilResearch8 IEEE TRANSACTIONSIIILet's Get toWide

  18. Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

    SciTech Connect (OSTI)

    Hsu, H. S., E-mail: hshsu@mail.nptu.edu.tw; Chien, P. C.; Chang, Y. Y. [Department of Applied Physics, National Pingtung University, Pingtung 900, Taiwan (China); Sun, S. J. [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Lee, C. H. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

    2014-08-04

    This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3?nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c}?=?3?nm and d{sub c}?=?6?nm. Only remnant circular dichroism (CD) was observed from the d{sub c}?=?3?nm sample but not when d{sub c}?=?6?nm. In addition, the remnant CD peaks at 5.5?eV, which is comparable with the absorption peak associated with the C ?-?* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

  19. Gap formation and stability in non-isothermal protoplanetary discs

    E-Print Network [OSTI]

    Les, Robert

    2015-01-01

    Several observations of transition discs show lopsided dust-distributions. A potential explanation is the formation of a large-scale vortex acting as a dust-trap at the edge of a gap opened by a giant planet. Numerical models of gap-edge vortices have thus far employed locally isothermal discs, but the theory of this vortex-forming or `Rossby wave' instability was originally developed for adiabatic discs. We generalise the study of planetary gap stability to non-isothermal discs using customised numerical simulations of disc-planet systems where the planet opens an unstable gap. We include in the energy equation a simple cooling function with cooling timescale $t_c=\\beta\\Omega_k^{-1}$, where $\\Omega_k$ is the Keplerian frequency, and examine the effect of $\\beta$ on the stability of gap edges and vortex lifetimes. We find increasing $\\beta$ lowers the growth rate of non-axisymmetric perturbations, and the dominant azimuthal wavenumber $m$ decreases. We find a quasi-steady state consisting of one large-scale, ...

  20. W-band free-electron masers

    SciTech Connect (OSTI)

    Freund, H. P. [Science Applications International Corp., McLean, Virginia 22102 (United States); Jackson, R. H.; Danly, B. G.; Levush, B. [Naval Research Laboratory, Washington, District of Columbia 20375 (United States)

    1999-05-07

    Theoretical analyses of high power W-band (i.e., {approx_equal}94 GHz) free-electron maser amplifiers are presented for a helical wiggler/cylindrical waveguide configuration using the three-dimensional slow-time-scale ARACHNE simulation code [9]. The geometry treated by ARACHNE is that of an electron beam propagating through the cylindrical waveguide subject to a helical wiggler and an axial guide magnetic field. Two configurations are discussed. The first is the case of a reversed-guide field geometry where the guide field is oriented antiparallel to the helicity of the wiggler field. Using a 330 kV/20 A electron beam, efficiencies of the order of 7% are calculated with a bandwidth (FWHM) of 5 GHz. The second example employs a strong guide field of 20 kG oriented parallel to the helicity of the wiggler. Here, efficiencies of greater than 8% are possible with a FWHM bandwidth of 4.5 GHz using a 300 kV/20 A electron beam. A normalized emittance of 95 mm-mrad is assumed in both cases, and no beam losses are observed for either case. Both cases assume interaction with the fundamental TE{sub 11} mode, which has acceptably low losses in the W-band.

  1. Puzzling Phenomenon of Diffuse Interstellar Bands

    E-Print Network [OSTI]

    B. Wszolek

    2007-12-10

    The discovery of the first diffuse interstellar bands (DIBs) dates back to the pioneering years of stellar spectroscopy. Today, we know about 300 absorption structures of this kind. There exists a great variety of the profiles and intensities of DIBs, so they can not be readily described, classified or characterized. To the present day no reliable identification of the DIBs' carriers has been found. Many carriers of DIBs have been proposed over the years. They ranged from dust grains to free molecules of different kinds, and to more exotic specimens, like hydrogen negative ion. Unfortunately, none of them is responsible for observed DIBs. Furthermore, it was shown that a single carrier cannot be responsible for all known DIBs. It is hard to estimate how many carriers can participate in producing these bands. The problem is further complicated by the fact that to this day it is still impossible to find any laboratory spectrum of any substance which would match the astrophysical spectra. Here, a historical outline concerning DIBs is followed by a brief description of their whole population. Then, a special attention is focused on the procedures trying to extract spectroscopic families within the set of all known DIBs.

  2. Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

    SciTech Connect (OSTI)

    Henager, Charles H.; Gao, Fei; Hu, Shenyang Y.; Lin, Guang; Bylaska, Eric J.; Zabaras, Nicholas

    2012-11-01

    This one-year, study topic project will survey and investigate the known state-of-the-art of modeling and simulation methods suitable for performing fine-scale, fully 3-D modeling, of the growth of CZT crystals at the melt-solid interface, and correlating physical growth and post-growth conditions with generation and incorporation of defects into the solid CZT crystal. In the course of this study, this project will also identify the critical gaps in our knowledge of modeling and simulation techniques in terms of what would be needed to be developed in order to perform accurate physical simulations of defect generation in melt-grown CZT. The transformational nature of this study will be, for the first time, an investigation of modeling and simulation methods for describing microstructural evolution during crystal growth and the identification of the critical gaps in our knowledge of such methods, which is recognized as having tremendous scientific impacts for future model developments in a wide variety of materials science areas.

  3. Government-Wide Diversity and Inclusion Strategic Plan (2011...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Government-Wide Diversity and Inclusion Strategic Plan (2011), Office of Personnel Management Government-Wide Diversity and Inclusion Strategic Plan (2011), Office of Personnel...

  4. Proposed Energy Transport Corridors: West-wide energy corridor...

    Office of Environmental Management (EM)

    Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Proposed Energy Transport Corridors: West-wide energy corridor...

  5. DOE Traineeship In Power Engineering (Leveraging Wide Bandgap...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) July 20, 2015 -...

  6. DOE Traineeship In Power Engineering (Leveraging Wide Bandgap...

    Office of Environmental Management (EM)

    Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) July 20, 2015 - 1:00pm...

  7. AMO's New Institute Focused on Wide Bandgap Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AMO's New Institute Focused on Wide Bandgap Power Electronics Manufacturing AMO's New Institute Focused on Wide Bandgap Power Electronics Manufacturing January 15, 2014 - 11:34am...

  8. Networking and the Web World-Wide Web

    E-Print Network [OSTI]

    Lin, Ming C.

    Networking and the Web #12;World-Wide Web · Wide use of computers Web · Key components of the web ­ Computer Communica8on Networks

  9. DOE Issues Final Site-Wide Environmental Impact Statement for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Site-Wide Environmental Impact Statement for the Nevada National Security Site DOE Issues Final Site-Wide Environmental Impact Statement for the Nevada National Security Site...

  10. Effective Community-Wide Policy Technical Assistance: The NREL...

    Open Energy Info (EERE)

    Effective Community-Wide Policy Technical Assistance: The NRELDOE Approach Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Effective Community-Wide Policy Technical...

  11. Analyses Guided Optimization of Wide Range and High Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Analyses Guided Optimization of Wide Range and High Efficiency Turbocharger Compressor Analyses Guided Optimization of Wide Range and High Efficiency Turbocharger Compressor...

  12. Wide Angle Effects in Galaxy Surveys

    E-Print Network [OSTI]

    Yoo, Jaiyul

    2013-01-01

    Current and future galaxy surveys cover a large fraction of the entire sky with a significant redshift range, and the recent theoretical development shows that general relativistic effects are present in galaxy clustering on very large scales. This trend has renewed interest in the wide angle effect in galaxy clustering measurements, in which the distant-observer approximation is often adopted. Using the full wide-angle formula for computing the redshift-space correlation function, we show that compared to the sample variance, the deviation in the redshift-space correlation function from the simple Kaiser formula with the distant-observer approximation is negligible in the SDSS and is completely irrelevant in future galaxy surveys such as Euclid and the BigBOSS, if the theoretical prediction from the Kaiser formula is averaged over the survey volume and the non-uniform distribution of cosine angle between the line-of-sight and the pair separation directions is properly considered. We also find small correctio...

  13. Spectroscopic subsystems in nearby wide binaries

    E-Print Network [OSTI]

    Tokovinin, Andrei

    2015-01-01

    Radial velocity (RV) monitoring of solar-type visual binaries has been conducted at the CTIO/SMARTS 1.5-m telescope to study short-period systems. Data reduction is described, mean and individual RVs of 163 observed objects are given. New spectroscopic binaries are discovered or suspected in 17 objects, for some of them orbital periods could be determined. Subsystems are efficiently detected even in a single observation by double lines and/or by the RV difference between the components of visual binaries. The potential of this detection technique is quantified by simulation and used for statistical assessment of 96 wide binaries within 67pc. It is found that 43 binaries contain at least one subsystem and the occurrence of subsystems is equally probable in either primary or secondary components. The frequency of subsystems and their periods match the simple prescription proposed by the author (2014, AJ, 147, 87). The remaining 53 simple wide binaries with a median projected separation of 1300AU have the distri...

  14. Whistler anisotropy instabilities as the source of banded chorus: Van Allen Probes observations and particle-in-cell simulations: FU ET AL.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Xiangrong; Cowee, Misa M.; Friedel, Reinhard H.; Funsten, Herbert O.; Gary, S. Peter; Hospodarsky, George B.; Kletzing, Craig; Kurth, William; Larsen, Brian A.; Liu, Kaijun; et al

    2014-10-22

    Magnetospheric banded chorus is enhanced whistler waves with frequencies ?rmore »November 2012. The observations are consistent with a three-component electron model consisting of a cold (a few tens of eV) population, a warm (a few hundred eV) anisotropic population, and a hot (a few keV) anisotropic population. The simulations use plasma and field parameters as measured from the satellite during this event except for two numbers: the anisotropies of the warm and the hot electron components are enhanced over the measured values in order to obtain relatively rapid instability growth. The simulations show that the warm component drives the quasi-electrostatic upper band chorus and that the hot component drives the electromagnetic lower band chorus; the gap at ??e/2 is a natural consequence of the growth of two whistler modes with different properties.« less

  15. A Fixed Gap APPLE II Undulator for SLS

    SciTech Connect (OSTI)

    Schmidt, T.; Imhof, A.; Ingold, G.; Jakob, B.; Vollenweider, C.

    2007-01-19

    To vary the polarization vector of an APPLE II undulator continuously from 0 - 180 deg., all four magnet arrays need to be movable. Following the adjustable-phase undulator approach by R. Carr, a 3.4 m long fixed gap undulator for SLS with a gap of 11.6 mm has been constructed. It will be installed in fall 2006. The gap drive is replaced by a pair-wise shift of the magnet arrays to change the energy, while the polarization is changed by shifts of diagonal arrays. The high injection efficiency and standard operation top-up mode at the SLS allows this simplified undulator design. The design as well as the operational aspects will be discussed.

  16. Finite-temperature lineshapes in gapped quantum spin chains

    E-Print Network [OSTI]

    Fabian H. L. Essler; Robert M. Konik

    2007-12-05

    We consider the finite-temperature dynamical structure factor (DSF) of gapped quantum spin chains such as the spin one Heisenberg model and the transverse field Ising model in the disordered phase. At zero temperature the DSF in these models is dominated by a delta-function line arising from the coherent propagation of single particle modes. Using methods of integrable quantum field theory we determine the evolution of the lineshape at low temperatures. We show that the line shape is in general asymmetric in energy and becomes Lorentzian only at temperatures far below the gap. We discuss the relevance of our results for the analysis of inelastic neutron scattering experiments on gapped spin chain systems such as CsNiCl_3 and YBaNiO_5.

  17. NGNP Project Regulatory Gap Analysis for Modular HTGRs

    SciTech Connect (OSTI)

    Wayne Moe

    2011-09-01

    The Next Generation Nuclear Plant (NGNP) Project Regulatory Gap Analysis (RGA) for High Temperature Gas-Cooled Reactors (HTGR) was conducted to evaluate existing regulatory requirements and guidance against the design characteristics specific to a generic modular HTGR. This final report presents results and identifies regulatory gaps concerning current Nuclear Regulatory Commission (NRC) licensing requirements that apply to the modular HTGR design concept. This report contains appendices that highlight important HTGR licensing issues that were found during the RGA study. The information contained in this report will be used to further efforts in reconciling HTGR-related gaps in the NRC licensing structure, which has to date largely focused on light water reactor technology.

  18. WORKSHOP REPORT:Light-Duty Vehicles Technical Requirements and Gaps for Lightweight and Propulsion Materials

    Office of Energy Efficiency and Renewable Energy (EERE)

    WORKSHOP REPORT:Light-Duty Vehicles Technical Requirements and Gaps for Lightweight and Propulsion Materials

  19. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  20. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J. (Los Alamos, NM)

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  1. Rapidity gap survival in the black-disk regime

    SciTech Connect (OSTI)

    Leonid Frankfurt; Charles Hyde; Mark Strikman; Christian Weiss

    2007-04-16

    We summarize how the approach to the black-disk regime (BDR) of strong interactions at TeV energies influences rapidity gap survival in exclusive hard diffraction pp -> p + H + p (H = dijet, Qbar Q, Higgs). Employing a recently developed partonic description of such processes, we discuss (a) the suppression of diffraction at small impact parameters by soft spectator interactions in the BDR; (b) further suppression by inelastic interactions of hard spectator partons in the BDR; (c) correlations between hard and soft interactions. Hard spectator interactions substantially reduce the rapidity gap survival probability at LHC energies compared to previously reported estimates.

  2. Wide range radioactive gas concentration detector

    DOE Patents [OSTI]

    Anderson, David F. (Los Alamos, NM)

    1984-01-01

    A wide range radioactive gas concentration detector and monitor which is capable of measuring radioactive gas concentrations over a range of eight orders of magnitude. The device of the present invention is designed to have an ionization chamber which is sufficiently small to give a fast response time for measuring radioactive gases but sufficiently large to provide accurate readings at low concentration levels. Closely spaced parallel plate grids provide a uniform electric field in the active region to improve the accuracy of measurements and reduce ion migration time so as to virtually eliminate errors due to ion recombination. The parallel plate grids are fabricated with a minimal surface area to reduce the effects of contamination resulting from absorption of contaminating materials on the surface of the grids. Additionally, the ionization chamber wall is spaced a sufficient distance from the active region of the ionization chamber to minimize contamination effects.

  3. Imaging spectrometer wide field catadioptric design

    DOE Patents [OSTI]

    Chrisp; Michael P. (Danville, CA)

    2008-08-19

    A wide field catadioptric imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The catadioptric design has zero Petzval field curvature. The imaging spectrometer comprises an entrance slit for transmitting light, a system with a catadioptric lens and a dioptric lens for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the system for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the system for receiving the light and the system for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light through the system for receiving the light to the detector array.

  4. Audio-band frequency-dependent squeezing

    E-Print Network [OSTI]

    Oelker, Eric; Miller, John; Tse, Maggie; Barsotti, Lisa; Mavalvala, Nergis; Evans, Matthew

    2015-01-01

    Quantum vacuum fluctuations impose strict limits on precision displacement measurements, those of interferometric gravitational-wave detectors among them. Introducing squeezed states into an interferometer's readout port can improve the sensitivity of the instrument, leading to richer astrophysical observations. However, optomechanical interactions dictate that the vacuum's squeezed quadrature must rotate by 90 degrees around 50Hz. Here we use a 2-m-long, high-finesse optical resonator to produce frequency-dependent rotation around 1.2kHz. This demonstration of audio-band frequency-dependent squeezing uses technology and methods that are scalable to the required rotation frequency, heralding application of the technique in future gravitational-wave detectors.

  5. Broad-band acoustic hyperbolic metamaterial

    E-Print Network [OSTI]

    Shen, Chen; Sui, Ni; Wang, Wenqi; Cummer, Steven A; Jing, Yun

    2015-01-01

    Acoustic metamaterials (AMMs) are engineered materials, made from subwavelength structures, that exhibit useful or unusual constitutive properties. There has been intense research interest in AMMs since its first realization in 2000 by Liu et al. A number of functionalities and applications have been proposed and achieved using AMMs. Hyperbolic metamaterials are one of the most important types of metamaterials due to their extreme anisotropy and numerous possible applications, including negative refraction, backward waves, spatial filtering, and subwavelength imaging. Although the importance of acoustic hyperbolic metamaterials (AHMMs) as a tool for achieving full control of acoustic waves is substantial, the realization of a broad-band and truly hyperbolic AMM has not been reported so far. Here, we demonstrate the design and experimental characterization of a broadband AHMM that operates between 1.0 kHz and 2.5 kHz.

  6. Eastern Band of Cherokee Strategic Energy Plan

    SciTech Connect (OSTI)

    Souther Carolina Institute of energy Studies-Robert Leitner

    2009-01-30

    The Eastern Band of Cherokee Indians was awarded a grant under the U.S. Department of Energy Tribal Energy Program (TEP) to develop a Tribal Strategic Energy Plan (SEP). The grant, awarded under the “First Steps” phase of the TEP, supported the development of a SEP that integrates with the Tribe’s plans for economic development, preservation of natural resources and the environment, and perpetuation of Tribal heritage and culture. The Tribe formed an Energy Committee consisting of members from various departments within the Tribal government. This committee, together with its consultant, the South Carolina Institute for Energy Studies, performed the following activities: • Develop the Tribe’s energy goals and objectives • Establish the Tribe’s current energy usage • Identify available renewable energy and energy efficiency options • Assess the available options versus the goals and objectives • Create an action plan for the selected options

  7. START-GAP3/DLC3 is a GAP for RhoA and Cdc42 and is localized in focal adhesions regulating cell morphology

    SciTech Connect (OSTI)

    Kawai, Katsuhisa; Kiyota, Minoru; Seike, Junichi; Deki, Yuko [Graduate School of Life Science, University of Hyogo, Harima Science Garden City, Hyogo-ken 678-1297 (Japan); Yagisawa, Hitoshi [Graduate School of Life Science, University of Hyogo, Harima Science Garden City, Hyogo-ken 678-1297 (Japan)], E-mail: yagisawa@sci.u-hyogo.ac.jp

    2007-12-28

    In the human genome there are three genes encoding RhoGAPs that contain the START (steroidogenic acute regulatory protein (StAR)-related lipid transfer)-domain. START-GAP3/DLC3 is a tumor suppressor gene similar to two other human START-GAPs known as DLC1 or DLC2. Although expression of START-GAP3/DLC3 inhibits the proliferation of cancer cells, its molecular function is not well understood. In this study we carried out biochemical characterization of START-GAP3/DLC3, and explored the effects of its expression on cell morphology and intracellular localization. We found that START-GAP3/DLC3 serves as a stimulator of PLC{delta}1 and as a GAP for both RhoA and Cdc42 in vitro. Moreover, we found that the GAP activity is responsible for morphological changes. The intracellular localization of endogenous START-GAP3/DLC3 was explored by immunocytochemistry and was revealed in focal adhesions. These results indicate that START-GAP3/DLC3 has characteristics similar to other START-GAPs and the START-GAP family seems to share common characteristics.

  8. Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si

    E-Print Network [OSTI]

    lutetium oxide LaLuO3 possesses many attractive properties for MOSFETs: wide optical band gap 5.6 eV ,1

  9. Engineering There is a technology gap for simple yet efficient

    E-Print Network [OSTI]

    Chemical Engineering Abstract There is a technology gap for simple yet efficient sample handling.D. in Biochemistry from the University of Illinois in 1989, and was a Postdoctoral Research Associate at the Beckman:15pm in LSE 106 School for Engineering of Matter, Transport & Energy #12;

  10. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  11. Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity

    E-Print Network [OSTI]

    Rash, John E.

    Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity Alberto E of synaptic transmission: chemical and electrical. While most efforts have been dedicated to the understanding in revised form 16 May 2012 Accepted 23 May 2012 Available online 31 May 2012 Keywords: Electrical synapse

  12. Interfacial band alignment and structural properties of nanoscale TiO{sub 2} thin films for integration with epitaxial crystallographic oriented germanium

    SciTech Connect (OSTI)

    Jain, N.; Zhu, Y.; Hudait, M. K., E-mail: mantu.hudait@vt.edu [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Varghese, R.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2014-01-14

    We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO{sub 2}) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO{sub 2} thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO{sub 2} thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO{sub 2}/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33?±?0.02?eV was determined for the amorphous TiO{sub 2} thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2?eV was obtained at the TiO{sub 2}/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO{sub 2}/Ge system were found to be smaller than 1?eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ?E{sub V}(100)?>??E{sub V}(111)?>??E{sub V}(110) and a conduction band-offset relation of ?E{sub C}(110) >??E{sub C}(111)?>??E{sub C}(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO{sub 2} for potential high-? dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

  13. SOME DIFFUSE INTERSTELLAR BANDS RELATED TO INTERSTELLAR C2 MOLECULES1 J. A. Thorburn,2

    E-Print Network [OSTI]

    Oka, Takeshi

    previously detected. The 4963 band is generally the strongest of the 18 C2 DIBs, while the 4734 band shows

  14. An alternative route for efficient optical indirect-gap excitation in Ge

    SciTech Connect (OSTI)

    Sakamoto, Tetsuya; Hayashi, Shuhei; Fukatsu, Susumu, E-mail: cfkatz@mail.ecc.u-tokyo.ac.jp [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yasutake, Yuhsuke [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (Japan)

    2014-07-28

    We explored optical excitation pathways in the multivalley semiconductor Ge in an attempt to expedite selective electron injection into the indirect L-band-edge. An off-peak resonant excitation route was developed, which offers the pumping efficiency outperforming the phonon-assisted near-indirect-edge absorption by more than six orders of magnitude. The valley selectivity results from the intra-valley relaxation that separates electrons and holes in momentum space following excitation. Fortuitously, the widely used green laser, 532?nm, is found to be nearly ideally suited to the efficient L-valley-selective excitation in Ge. Such valley-specific pumping may help clarify the otherwise complicated electron dynamics involving intervalley processes.

  15. RX J1016.9-4103: A new soft X-ray polar in the period gap

    E-Print Network [OSTI]

    Jochen Greiner; Robert Schwarz

    1998-09-09

    We have discovered a new AM Her system as the optical counterpart of the ROSAT All-Sky-Survey source RX J1016.9-4103 (= 1RXS J101659.4-410332). The X-ray spectrum is very soft and the X-ray intensity is strongly modulated with the orbital period. Optical photometric and spectroscopic follow-up observations reveal a synchronously rotating binary with an orbital period of 134 min, placing RX J1016.9-4103 in the period gap. The strength of the TiO bands suggests a secondary spectral type later than M3 V and a distance of 615+/-150 pc. Based on two clearly visible broad humps in the optical spectrum (interpreted as cyclotron features) a magnetic field strength of 52 MG is deduced thus proving the polar classification.

  16. Agua Caliente Band of Cahuilla Indians- 2010 Project

    Broader source: Energy.gov [DOE]

    The Agua Caliente Band of Cahuilla Indians (ACBCI) will conduct a feasibility and predevelopment study of potential solar projects on its lands in southern California.

  17. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect (OSTI)

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  18. Project Reports for Soboba Band of Luiseno Indians- 2011 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Soboba Band of Luiseno Indians would like to begin to focus on renewable sources for electricity and to actively target lowering the energy usage of the community.

  19. InfiniBand-Connected LNET Routers Wheaton College Georgia Institute...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scalability of InfiniBand-Connected LNET Routers Wheaton College Georgia Institute of Technology New Mexico Institute of Mining and Technology Susan Coulter David Bonnie...

  20. Experimental reconstruction of Wilson lines in Bloch bands

    E-Print Network [OSTI]

    Tracy Li; Lucia Duca; Martin Reitter; Fabian Grusdt; Eugene Demler; Manuel Endres; Monika Schleier-Smith; Immanuel Bloch; Ulrich Schneider

    2015-09-07

    Topology and geometry are essential to our understanding of modern physics, underlying many foundational concepts from a variety of fields. In condensed matter systems, the electronic properties of a solid are determined not only by the scalar dispersion of the bands, but also by the geometry of the band eigenstates. While this information is encoded in the Berry connection and the corresponding Berry phase in the specific case of a single band, the geometry of general multi-band systems is described by the matrix-valued Wilczek-Zee connection and the corresponding Wilson lines. Whereas Berry phases have been directly observed in Bloch bands, Wilson lines have solely been employed as a theoretical construct. Here, we report on the realization of strong-force dynamics in Bloch bands that are described by Wilson lines. The resulting evolution of band populations is purely geometric in origin and can directly reveal both the geometric structure and dispersion of the bands. Our techniques enable a full determination of band eigenstates, Berry curvature, and topological invariants, including Chern and $Z_2$ numbers.