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Sample records for wi wisconsin ga

  1. DOE - Office of Legacy Management -- Besley-Wells - Wisconsin - WI 03

    Office of Legacy Management (LM)

    Besley-Wells - Wisconsin - WI 03 FUSRAP Considered Sites Site: Besley-Wells - Wisconsin (WI.03 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Besley Products Co. WI.03-3 Location: Beloit , Wisconsin WI.03-1 Evaluation Year: 1994 WI.03-1 Site Operations: 1953 proposal for a trial lot of 500 uranium slugs to be machined by Besley double spindle wet grinder in order to compare production rate with that of current process; no indication proposed

  2. The University of Wisconsin | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: The University of Wisconsin Place: Madison, WI Website: www.wisc.edu References: The University of Wisconsin 1 Information About Partnership with NREL...

  3. 1,"Elm Road Generating Station","Coal","Wisconsin Electric Power...

    U.S. Energy Information Administration (EIA) Indexed Site

    summer capacity (MW)" 1,"Elm Road Generating Station","Coal","Wisconsin Electric Power ... Electric Power Co",1190 4,"Columbia (WI)","Coal","Wisconsin Power & Light ...

  4. Wisconsin - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin Wisconsin

  5. Wisconsin - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin Wisconsin

  6. Wisconsin - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin Wisconsin

  7. Wisconsin Energy Conservation Corporation | Open Energy Information

    Open Energy Info (EERE)

    Conservation Corporation Jump to: navigation, search Name: Wisconsin Energy Conservation Corporation Address: 431 Charmany Dr Place: Madison, WI Sector: Efficiency Year Founded:...

  8. US ENC WI Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    120 US ENC WI Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US ENC WI Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US ENC WI Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 US ENC WI Expenditures dollars ELECTRICITY ONLY average per household * Wisconsin households use 103 million Btu of energy per home, 15% more than the U.S. average. * Lower electricity and natural gas rates compared to

  9. DOE - Office of Legacy Management -- Milwaukee Airport - WI 04

    Office of Legacy Management (LM)

    Milwaukee Airport - WI 04 FUSRAP Considered Sites Site: MILWAUKEE AIRPORT (WI.04 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Milwaukee Airport , Milwaukee , Wisconsin WI.04-1 Evaluation Year: 1991 WI.04-1 Site Operations: Airport Facility received a shipment of Uranium oxides from Allegheny Ludlow sent to an AEC employee - final destination unknown. WI.04-1 Site Disposition: Eliminated - Limited scope of activities performed

  10. DOE - Office of Legacy Management -- Research Products Corp - WI 02

    Office of Legacy Management (LM)

    Research Products Corp - WI 02 FUSRAP Considered Sites Site: RESEARCH PRODUCTS CORP. ( WI.02 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 1015 E. Washington Ave. , Madison , Wisconsin WI.02-1 Evaluation Year: 1987 WI.02-1 Site Operations: Absorber and ion-exchange resins production, and preparation of Titanium Zeolite samples. WI.02-1 Site Disposition: Eliminated - No indication that radioactive materials were handled at site

  11. City of Kiel, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Kiel, Wisconsin (Utility Company) Jump to: navigation, search Name: City of Kiel Place: Wisconsin Phone Number: 920-894-2909 Website: ci.kiel.wi.usmain.asp?Section Outage Hotline:...

  12. ,"Wisconsin Natural Gas Industrial Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    292016 12:16:34 AM" "Back to Contents","Data 1: Wisconsin Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)" "Sourcekey","N3035WI3" "Date","Wisconsin...

  13. City of Lodi, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Lodi Place: Wisconsin Phone Number: (608) 592-3246 Website: lodiutilities.org Facebook: https:www.facebook.compagesCity-of-Lodi-WI187000488154840 Outage Hotline: (608)...

  14. Trempealeau County, Wisconsin: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Wisconsin Chimney Rock, Wisconsin Dodge, Wisconsin Eleva, Wisconsin Ettrick, Wisconsin Gale, Wisconsin Galesville, Wisconsin Hale, Wisconsin Independence, Wisconsin Osseo,...

  15. Wisconsin State Historic Preservation Programmatic Agreement | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Wisconsin State Historic Preservation Programmatic Agreement Wisconsin State Historic Preservation Programmatic Agreement Fully executed programmatic agreement between DOE, State Energy Office and State Historic Preservation Office. PDF icon state_historic_preservation_programmatic_agreement_wi.pdf More Documents & Publications Prototype Programmatic Agreement Between DOE, State Energy Offices, and State Historic Preservation Offices PROTOTYPE PROGRAMMATIC AGREEMENT BETWEEN THE

  16. Categorical Exclusion Determinations: Wisconsin | Department of Energy

    Office of Environmental Management (EM)

    Wisconsin Categorical Exclusion Determinations: Wisconsin Location Categorical Exclusion Determinations issued for actions in Wisconsin. DOCUMENTS AVAILABLE FOR DOWNLOAD March 7, 2016 CX-100549 Categorical Exclusion Determination The Grow Solar Partnership Award Number: DE-EE00006544 CX(s) Applied: A9, A11 Solar Energy Technologies Office Date: 07/31/2014 Location(s): WI Office(s): Golden Field Office February 25, 2016 CX-100496 Categorical Exclusion Determination Demonstration of uCHP in Light

  17. Waupaca County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dupont, Wisconsin Embarrass, Wisconsin Farmington, Wisconsin Fremont, Wisconsin Harrison, Wisconsin Helvetia, Wisconsin Iola, Wisconsin Larrabee, Wisconsin Lebanon, Wisconsin...

  18. Rusk County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Lawrence, Wisconsin Murry, Wisconsin Richland, Wisconsin Rusk, Wisconsin Sheldon, Wisconsin South Fork, Wisconsin Strickland, Wisconsin Stubbs, Wisconsin Thornapple,...

  19. Marinette County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Wisconsin Beecher, Wisconsin Coleman, Wisconsin Crivitz, Wisconsin Dunbar, Wisconsin Goodman, Wisconsin Marinette, Wisconsin Middle Inlet, Wisconsin Niagara, Wisconsin Pembine,...

  20. Dodge County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hustisford, Wisconsin Iron Ridge, Wisconsin Juneau, Wisconsin Kekoskee, Wisconsin Leroy, Wisconsin Lomira, Wisconsin Lowell, Wisconsin Mayville, Wisconsin Neosho, Wisconsin...

  1. Lincoln County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Birch, Wisconsin Bradley, Wisconsin Corning, Wisconsin Harding, Wisconsin King, Wisconsin Merrill, Wisconsin Pine River, Wisconsin Rock Falls, Wisconsin Schley,...

  2. Monroe County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Norwalk, Wisconsin Oakdale, Wisconsin Portland, Wisconsin Ridgeville, Wisconsin Sparta, Wisconsin Tomah, Wisconsin Warrens, Wisconsin Wellington, Wisconsin Wells, Wisconsin...

  3. Shawano County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Morris, Wisconsin Navarino, Wisconsin Pella, Wisconsin Pulaski, Wisconsin Red Springs, Wisconsin Shawano, Wisconsin Tigerton, Wisconsin Waukechon, Wisconsin Wescott,...

  4. RES Wisconsin

    Broader source: Energy.gov [DOE]

    The National Center for American Indian Enterprise Development (The National Center) is proud to announce RES Wisconsin, which will be held October 6th 9th, 2014 at the Potawatomi Hotel & Casino in Milwaukee, Wisconsin.

  5. City of Evansville, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    search Name: City of Evansville Place: Wisconsin Phone Number: 608-882-2280 Website: www.ci.evansville.wi.govcity Outage Hotline: 608-882-2288 References: EIA Form EIA-861 Final...

  6. Marquette County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Montello, Wisconsin Moundville, Wisconsin Neshkoro, Wisconsin Newton, Wisconsin Oxford, Wisconsin Packwaukee, Wisconsin Shields, Wisconsin Westfield, Wisconsin Retrieved...

  7. Waushara County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Plainfield, Wisconsin Poysippi, Wisconsin Redgranite, Wisconsin Richford, Wisconsin Rose, Wisconsin Saxeville, Wisconsin Springwater, Wisconsin Warren, Wisconsin Wautoma,...

  8. Bayfield County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Namakagon, Wisconsin Orienta, Wisconsin Oulu, Wisconsin Pilsen, Wisconsin Port Wing, Wisconsin Tripp, Wisconsin Washburn, Wisconsin Retrieved from "http:...

  9. Ozaukee County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Fredonia, Wisconsin Grafton, Wisconsin Mequon, Wisconsin Newburg, Wisconsin Port Washington, Wisconsin Saukville, Wisconsin Thiensville, Wisconsin Retrieved from...

  10. Wood County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Marshfield, Wisconsin Milladore, Wisconsin Nekoosa, Wisconsin Pittsville, Wisconsin Port Edwards, Wisconsin Remington, Wisconsin Richfield, Wisconsin Rock, Wisconsin Rudolph,...

  11. Outagamie County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Hortonia, Wisconsin Hortonville, Wisconsin Howard, Wisconsin Kaukauna, Wisconsin Kimberly, Wisconsin Little Chute, Wisconsin Maine, Wisconsin Maple Creek, Wisconsin New...

  12. Polk County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Centuria, Wisconsin Clam Falls, Wisconsin Clayton, Wisconsin Clear Lake, Wisconsin Dresser, Wisconsin Eureka, Wisconsin Frederic, Wisconsin Garfield, Wisconsin Laketown,...

  13. Grant County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Grant, Wisconsin Livingston, Wisconsin Millville, Wisconsin Montfort, Wisconsin Mount Hope, Wisconsin Mount Ida, Wisconsin Muscoda, Wisconsin North Lancaster, Wisconsin Patch...

  14. Richland County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Cazenovia, Wisconsin Henrietta, Wisconsin Ithaca, Wisconsin Lone Rock, Wisconsin Orion, Wisconsin Richland Center, Wisconsin Richwood, Wisconsin Rockbridge, Wisconsin...

  15. Crawford County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Lynxville, Wisconsin Marietta, Wisconsin Mount Sterling, Wisconsin Prairie du Chien, Wisconsin Soldiers Grove, Wisconsin Steuben, Wisconsin Wauzeka, Wisconsin Retrieved...

  16. Racine County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Park, Wisconsin Franksville, Wisconsin Mount Pleasant, Wisconsin North Bay, Wisconsin Norway, Wisconsin Racine, Wisconsin Raymond, Wisconsin Rochester, Wisconsin Sturtevant,...

  17. Lafayette County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Belmont, Wisconsin Benton, Wisconsin Blanchard, Wisconsin Blanchardville, Wisconsin Cuba City, Wisconsin Darlington, Wisconsin Elk Grove, Wisconsin Fayette, Wisconsin Gratiot,...

  18. Chippewa County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Cooks Valley, Wisconsin Cornell, Wisconsin Delmar, Wisconsin Eagle Point, Wisconsin Eau Claire, Wisconsin Edson, Wisconsin Estella, Wisconsin Goetz, Wisconsin Hallie,...

  19. Portage County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Almond, Wisconsin Amherst Junction, Wisconsin Amherst, Wisconsin Carson, Wisconsin Eau Pleine, Wisconsin Hull, Wisconsin Junction City, Wisconsin Lanark, Wisconsin Linwood,...

  20. Sauk County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Delton, Wisconsin Excelsior, Wisconsin Fairfield, Wisconsin Freedom, Wisconsin Honey Creek, Wisconsin Ironton, Wisconsin La Valle, Wisconsin Lake Delton, Wisconsin Lake...

  1. Calumet County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Brillion, Wisconsin Brothertown, Wisconsin Charlestown, Wisconsin Chilton, Wisconsin Hilbert, Wisconsin Kiel, Wisconsin Menasha, Wisconsin New Holstein, Wisconsin Potter,...

  2. DOE - Office of Legacy Management -- Trane Co - WI 0-02

    Office of Legacy Management (LM)

    Trane Co - WI 0-02 FUSRAP Considered Sites Site: TRANE CO. (WI.0-02 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: LaCross , Wisconsin WI.0-02-1 Evaluation Year: 1987 WI.0-02-1 Site Operations: Produced Aluminum cans for fuel rod experiments at Argonne Met Lab; Supplied construction materials to Oak Ridge. WI.0-02-1 Site Disposition: Eliminated - No radioactive materials used at this site WI.0-02-1 Radioactive Materials

  3. Langlade County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Neva, Wisconsin Norwood, Wisconsin Parrish, Wisconsin Peck, Wisconsin Polar, Wisconsin Price, Wisconsin Rolling, Wisconsin Upham, Wisconsin Vilas, Wisconsin White Lake, Wisconsin...

  4. File:USDA-CE-Production-GIFmaps-WI.pdf | Open Energy Information

    Open Energy Info (EERE)

    WI.pdf Jump to: navigation, search File File history File usage Wisconsin Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275...

  5. Oconto County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Riverview, Wisconsin Spruce, Wisconsin Stiles, Wisconsin Suring, Wisconsin Townsend, Wisconsin Underhill, Wisconsin Retrieved from "http:en.openei.orgw...

  6. Buffalo County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Modena, Wisconsin Mondovi, Wisconsin Montana, Wisconsin Naples, Wisconsin Nelson, Wisconsin Waumandee, Wisconsin Retrieved from "http:en.openei.orgw...

  7. Price County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Flambeau River Biofuels Places in Price County, Wisconsin Catawba, Wisconsin Eisenstein, Wisconsin Elk, Wisconsin Emery, Wisconsin Fifield, Wisconsin Georgetown, Wisconsin...

  8. Fond du Lac County, Wisconsin: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Oakfield, Wisconsin Ripon, Wisconsin Rosendale, Wisconsin Springvale, Wisconsin St. Cloud, Wisconsin Taycheedah, Wisconsin Waupun, Wisconsin Retrieved from "http:...

  9. Dunn County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Lucas, Wisconsin Menomonie, Wisconsin New Haven, Wisconsin Peru, Wisconsin Red Cedar, Wisconsin Ridgeland, Wisconsin Rock Creek, Wisconsin Sand Creek, Wisconsin...

  10. St. Croix County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Wisconsin Cady, Wisconsin Cylon, Wisconsin Deer Park, Wisconsin Eau Galle, Wisconsin Emerald, Wisconsin Erin Prairie, Wisconsin Glenwood City, Wisconsin Glenwood, Wisconsin...

  11. WI Biodiesel Blending Progream Final Report

    SciTech Connect (OSTI)

    Redmond, Maria E; Levy, Megan M

    2013-04-01

    The Wisconsin State Energy Office?¢????s (SEO) primary mission is to implement cost?¢???effective, reliable, balanced, and environmentally?¢???friendly clean energy projects. To support this mission the Wisconsin Biodiesel Blending Program was created to financially support the installation infrastructure necessary to directly sustain biodiesel blending and distribution at petroleum terminal facilities throughout Wisconsin. The SEO secured a federal directed award of $600,000 over 2.25 years. With these funds, the SEO supported the construction of inline biodiesel blending facilities at two petroleum terminals in Wisconsin. The Federal funding provided through the state provided a little less than half of the necessary investment to construct the terminals, with the balance put forth by the partners. Wisconsin is now home to two new biodiesel blending terminals. Fusion Renewables on Jones Island (in the City of Milwaukee) will offer a B100 blend to both bulk and retail customers. CITGO is currently providing a B5 blend to all customers at their Granville, WI terminal north of the City of Milwaukee.

  12. Forest County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Crandon, Wisconsin Laona, Wisconsin Nashville, Wisconsin Popple River, Wisconsin Ross, Wisconsin Wabeno, Wisconsin Retrieved from "http:en.openei.orgw...

  13. Pierce County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Maiden Rock, Wisconsin Martell, Wisconsin Oak Grove, Wisconsin Plum City, Wisconsin Prescott, Wisconsin River Falls, Wisconsin Rock Elm, Wisconsin Salem, Wisconsin Spring Lake,...

  14. Clark County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Seif, Wisconsin Stanley, Wisconsin Thorp, Wisconsin Unity, Wisconsin Warner, Wisconsin Withee, Wisconsin Worden, Wisconsin Retrieved from "http:en.openei.orgw...

  15. Wisconsin: Wisconsins Clean Energy Resources and Economy

    SciTech Connect (OSTI)

    2013-03-25

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Wisconsin.

  16. WI Windinvest | Open Energy Information

    Open Energy Info (EERE)

    WI Windinvest Jump to: navigation, search Name: WI Windinvest Place: Westfalen, Germany Zip: 48727 Sector: Wind energy Product: Westfalen based wind project developer Coordinates:...

  17. Jefferson County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Wisconsin Renew Energy LLC Places in Jefferson County, Wisconsin Aztalan, Wisconsin Cambridge, Wisconsin Cold Spring, Wisconsin Concord, Wisconsin Fort Atkinson, Wisconsin...

  18. Washburn County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Subtype A. Places in Washburn County, Wisconsin Barronett, Wisconsin Bashaw, Wisconsin Bass Lake, Wisconsin Beaver Brook, Wisconsin Birchwood, Wisconsin Casey, Wisconsin Chicog,...

  19. Rock County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Rock County, Wisconsin CDH Energy EcoEnergy Places in Rock County, Wisconsin Avon, Wisconsin Beloit, Wisconsin Bradford, Wisconsin Brodhead, Wisconsin Center, Wisconsin...

  20. Florence County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Fence, Wisconsin Fern, Wisconsin Florence, Wisconsin Homestead, Wisconsin Tipler, Wisconsin Retrieved from "http:en.openei.orgwindex.php?titleFlorenceCounty,Wis...

  1. Kewaunee County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Kewaunee, Wisconsin Luxemburg, Wisconsin Montpelier, Wisconsin Pierce, Wisconsin Red River, Wisconsin West Kewaunee, Wisconsin Retrieved from "http:en.openei.orgw...

  2. Iron County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 7 Climate Zone Subtype A. Places in Iron County, Wisconsin Anderson, Wisconsin Carey, Wisconsin Gurney, Wisconsin Hurley, Wisconsin Kimball, Wisconsin...

  3. Bioenergy Impact on Wisconsin's Workforce

    Broader source: Energy.gov [DOE]

    Troy Runge, Wisconsin Bioenergy Initiative, presents on bioenergy's impact on Wisconsin's workforce development for the Biomass/Clean Cities States webinar.

  4. Pepin County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 6 Climate Zone Subtype A. Places in Pepin County, Wisconsin Durand, Wisconsin Frankfort, Wisconsin Pepin, Wisconsin Stockholm, Wisconsin Waterville,...

  5. Green Lake County, Wisconsin: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Mackford, Wisconsin Markesan, Wisconsin Marquette, Wisconsin Princeton, Wisconsin St. Marie, Wisconsin Retrieved from "http:en.openei.orgwindex.php?titleGreenLakeCounty,W...

  6. Walworth County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Sugar Creek, Wisconsin Troy, Wisconsin Walworth, Wisconsin Whitewater, Wisconsin Williams Bay, Wisconsin Retrieved from "http:en.openei.orgwindex.php?titleWalworthCounty...

  7. US ENC WI Site Consumption

    Gasoline and Diesel Fuel Update (EIA)

    on central air conditioning for cooling. 0% 20% 40% 60% 80% 100% US ENC WI OtherNone Propane Electricity Natural Gas MAIN HEATING FUEL USED COOLING EQUIPMENT USED DIVISION:...

  8. Wisconsin Dells, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    article is a stub. You can help OpenEI by expanding it. Wisconsin Dells is a city in Adams County and Columbia County and Juneau County and Sauk County, Wisconsin. It falls...

  9. Wisconsin: Wisconsin's Clean Energy Resources and Economy (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2013-03-01

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Wisconsin.

  10. Wisconsin Public Service Corp | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin Public Service Corp Place: Wisconsin Phone Number: 800-450-7260 Website: www.wisconsinpublicservice.com Twitter: @WPSStorm Outage Hotline: 800-450-7240 Outage Map:...

  11. LAPD Madison, Wisconsin USA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6 th LAPD Madison, Wisconsin USA Sunday, 22 September 2013 Varsity Hall III, Union South 18:00-20:00 Reception and Registration Monday, 23 September 2013 Session I (8:30-12:30) Varsity Hall III, Union South Chairs: J-P. Booth, E. E. Scime Time Speaker Title Index 7:30-8:30 Continental Breakfast 8:30-8:45 D. J. Den Hartog Welcome 8:45-9:35 N. C. Luhmann, Jr. Millimeter Wave and THz Plasma Diagnostic Development AK (1) 9:35-10:00 L. Lin Laser-Based Faraday-Effect Measurement of Magnetic

  12. United Wisconsin Grain Producers UWGP | Open Energy Information

    Open Energy Info (EERE)

    Name: United Wisconsin Grain Producers (UWGP) Place: Friesland, Wisconsin Product: Bioethanol producer using corn as feedstock References: United Wisconsin Grain Producers...

  13. Spring Green, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wisconsin. It falls under Wisconsin's 3rd congressional district.12 Registered Energy Companies in Spring Green, Wisconsin Biogas Direct LCC References US Census...

  14. Sheboygan County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    6 Climate Zone Subtype A. Registered Energy Companies in Sheboygan County, Wisconsin Orion Energy Systems Places in Sheboygan County, Wisconsin Adell, Wisconsin Cascade,...

  15. La Crosse County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    INOV8 International Inc Energy Generation Facilities in La Crosse County, Wisconsin French Island Biomass Facility Places in La Crosse County, Wisconsin Bangor, Wisconsin Barre,...

  16. EA-274 Wisconsin Public Service Corporation | Department of Energy

    Office of Environmental Management (EM)

    4 Wisconsin Public Service Corporation EA-274 Wisconsin Public Service Corporation Order authorizing Wisconsin Public Service Corporation to export electric energy to Canada. PDF...

  17. Public Service Commission of Wisconsin | Open Energy Information

    Open Energy Info (EERE)

    Commission of Wisconsin Jump to: navigation, search Name: Public Service Commission of Wisconsin Address: 610 North Whitney Way Place: Madison, Wisconsin Zip: 53707-7854 Phone...

  18. Wisconsin SRF Electron Gun Commissioning

    SciTech Connect (OSTI)

    Bisognano, Joseph J.; Bissen, M.; Bosch, R.; Efremov, M.; Eisert, D.; Fisher, M.; Green, M.; Jacobs, K.; Keil, R.; Kleman, K.; Rogers, G.; Severson, M.; Yavuz, D. D.; Legg, Robert A.; Bachimanchi, Ramakrishna; Hovater, J. Curtis; Plawski, Tomasz; Powers, Thomas J.

    2013-12-01

    The University of Wisconsin has completed fabrication and commissioning of a low frequency (199.6 MHz) superconducting electron gun based on a quarter wave resonator (QWR) cavity. Its concept was optimized to be the source for a CW free electron laser facility. The gun design includes active tuning and a high temperature superconducting solenoid. We will report on the status of the Wisconsin SRF electron gun program, including commissioning experience and first beam measurements.

  19. Friendship, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Friendship is a village in Adams County, Wisconsin. It falls under Wisconsin's 6th congressional district.12...

  20. Adams, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Adams is a city in Adams County, Wisconsin. It falls under Wisconsin's 6th congressional...

  1. Butler, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Butler is a village in Waukesha County, Wisconsin. It falls under Wisconsin's 5th...

  2. Madison, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Madison is a city in Dane County, Wisconsin. It falls under Wisconsin's 2nd congressional...

  3. Waukesha, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Waukesha is a city in Waukesha County, Wisconsin. It falls under Wisconsin's 5th congressional...

  4. Weston, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Weston is a village in Marathon County, Wisconsin. It falls under Wisconsin's 7th...

  5. Middleton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Middleton is a city in Dane County, Wisconsin. It falls under Wisconsin's 2nd congressional...

  6. Milton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Rock County, Wisconsin. It falls under Wisconsin's 1st congressional...

  7. Wisconsin Data Dashboard | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    The data dashboard for Wisconsin, a partner in the Better Buildings Neighborhood Program. File Wisconsin Data Dashboard More Documents & Publications Washington -- SEP Data Dashboard Kansas City Data Dashboard Virginia -- SEP Data Dashboard

  8. Wisconsin/Incentives | Open Energy Information

    Open Energy Info (EERE)

    - Commercial, Industrial, and Agricultural Energy Efficiency Rebate Program (Wisconsin) Utility Rebate Program Yes Barron Electric Cooperative - Commercial and Industry Energy...

  9. Recovery Act State Memos Wisconsin

    Broader source: Energy.gov (indexed) [DOE]

    Wisconsin For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  10. Seneca, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Seneca is a town in Wood County, Wisconsin.1 References US Census Bureau Incorporated...

  11. Stanley, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Stanley, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.9599657, -90.9370846 Show Map Loading map... "minzoom":false,"mappingser...

  12. ,"Wisconsin Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Wisconsin Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  13. ,"Wisconsin Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Wisconsin Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  14. Fermilab Today | University of Wisconsin Profile

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University of Wisconsin experimental particle physics group focuses on searches for the Higgs boson within and beyond the Standard Model. The group also focuses on new exotic...

  15. Johnson, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Johnson is a town in Marathon County, Wisconsin.1 References US Census Bureau...

  16. Wood, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wood, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 43.568752, -90.330887 Show Map Loading map... "minzoom":false,"mappingservice"...

  17. Washington County, Wisconsin: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Washington County, Wisconsin A.O. Smith Johnson Controls Optima Batteries Oskosh Tech Laboratories Inc WE Energies Energy...

  18. Schofield, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Schofield, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.9096907, -89.6045659 Show Map Loading map... "minzoom":false,"mappings...

  19. Mead, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    "alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Mead is a town in Clark County, Wisconsin.1 References US Census Bureau Incorporated...

  20. Adrian, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  1. Windsor, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dane County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  2. Agenda, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  3. Cassel, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  4. Day, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  5. Addison, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  6. Akan, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  7. Halsey, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  8. Reseburg, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  9. Ainsworth, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  10. Abrams, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  11. Quincy, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  12. Ackley, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  13. Alban, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  14. Seif, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  15. Bradford, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Rock County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  16. Ahnapee, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  17. Vermont, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dane County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  18. Central Wisconsin Elec Coop | Open Energy Information

    Open Energy Info (EERE)

    https:www.facebook.compagesCentral-Wisconsin-Electric-Cooperative268841143249085?refaymthomepagepanel Outage Hotline: 800-377-2932 References: EIA Form EIA-861 Final...

  19. Wisconsin Energy Center | Open Energy Information

    Open Energy Info (EERE)

    Energy Center of Wisconsin is a private, non-profit organization dedicated to improving energy sustainability including support of energy efficiency, renewable energy, and...

  20. Hixon, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleHixon,Wisconsin&oldid237...

  1. Berry, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleBerry,Wisconsin&oldid22764...

  2. Burke, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleBurke,Wisconsin&oldid22890...

  3. Rome, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    "","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Rome is a town in Adams County, Wisconsin.1 References US Census Bureau Incorporated place and minor...

  4. Leola, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    ","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Leola is a town in Adams County, Wisconsin.1 References US Census Bureau Incorporated place and minor...

  5. Springville, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    n":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Springville is a town in Adams County, Wisconsin.1 References US Census Bureau Incorporated place and minor...

  6. Milwaukee, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    congressional district.12 Registered Energy Companies in Milwaukee, Wisconsin A.O. Smith Johnson Controls Optima Batteries Oskosh Tech Laboratories Inc WE Energies References...

  7. Menomonie, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    3rd congressional district.12 Registered Energy Companies in Menomonie, Wisconsin Polymer Technology Corp References US Census Bureau Incorporated place and minor civil...

  8. Warner, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Warner, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.8301545, -90.6204165 Show Map Loading map... "minzoom":false,"mappingserv...

  9. Avon, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    "alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Avon is a town in Rock County, Wisconsin.1 References US Census Bureau Incorporated...

  10. Oneida Tribe of Indians of Wisconsin RFP

    Broader source: Energy.gov [DOE]

    Oneida Tribe of Wisconsin released a request for proposals (RFP) seeking installer and investor for 700 kilowatts of roof-mounted photovoltaic systems on multiple Oneida tribal facilities.

  11. Porter, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Porter is a town in Rock County, Wisconsin.1 References US Census Bureau Incorporated...

  12. Hansen, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hansen, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.4559334, -90.0186555 Show Map Loading map... "minzoom":false,"mappingserv...

  13. Lynn, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleLynn,Wisconsin&oldid240963...

  14. Bern, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleBern,Wisconsin&oldid227629...

  15. Emmet, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleEmmet,Wisconsin&oldid23398...

  16. Longwood, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleLongwood,Wisconsin&oldid24...

  17. Schleswig, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleSchleswig,Wisconsin&oldid2...

  18. Levis, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleLevis,Wisconsin&oldid24017...

  19. Medina, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleMedina,Wisconsin&oldid2419...

  20. Mentor, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleMentor,Wisconsin&oldid2420...

  1. Hewett, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleHewett,Wisconsin&oldid2373...

  2. Dewhurst, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleDewhurst,Wisconsin&oldid23...

  3. Bevent, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleBevent,Wisconsin&oldid2277...

  4. Rietbrock, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleRietbrock,Wisconsin&oldid2...

  5. Roxbury, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleRoxbury,Wisconsin&oldid247...

  6. Meeme, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleMeeme,Wisconsin&oldid24195...

  7. Kossuth, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleKossuth,Wisconsin&oldid239...

  8. Hendren, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleHendren,Wisconsin&oldid237...

  9. Perry, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    "alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Perry is a town in Dane County, Wisconsin.1 References US Census Bureau Incorporated...

  10. City of Barron, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Barron, Wisconsin (Utility Company) Jump to: navigation, search Name: City of Barron Place: Wisconsin Phone Number: 715-537-3855 Website: www.cityofbarron.comutilities Outage...

  11. Barron County, Wisconsin ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Barron County, Wisconsin ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barron County, Wisconsin ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  12. City of New Richmond, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Wisconsin (Utility Company) Jump to: navigation, search Name: City of New Richmond Place: Wisconsin Phone Number: (715) 246-4167 Website: www.nrutilities.com Twitter:...

  13. Kenosha County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Energy Generation Facilities in Kenosha County, Wisconsin Pheasant Run Landfill Gas Recovery Biomass Facility Places in Kenosha County, Wisconsin Bristol,...

  14. Wisconsin's 4th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Wisconsin. Registered Energy Companies in Wisconsin's 4th congressional district A.O. Smith Johnson Controls Optima Batteries Oskosh Tech Laboratories Inc WE Energies Retrieved...

  15. Wisconsin Summary of Reported Data | Department of Energy

    Energy Savers [EERE]

    Wisconsin. PDF icon Wisconsin Summary of Reported Data More Documents & Publications Virginia -- SEP Summary of Reported Data University Park Summary of Reported Data NYSERDA...

  16. Ashland County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Ashland County, Wisconsin Point Bio Energy LLC Energy Generation Facilities in Ashland County, Wisconsin Bay Front Biomass...

  17. City of Cuba City, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Cuba City, Wisconsin (Utility Company) Jump to: navigation, search Name: City of Cuba City Place: Wisconsin Phone Number: (608) 744-8735 Website: www.cubacitylightandwater.org...

  18. Village of Hazel Green, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Green, Wisconsin (Utility Company) Jump to: navigation, search Name: Village of Hazel Green Place: Wisconsin Phone Number: 608.854.2953 Website: villageofhazelgreen.orgabout...

  19. Neutronics at Wisconsin, ORNL advances ITER shielding and internationa...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Neutronics at Wisconsin, ORNL advances ITER shielding and international collaboration American Fusion News Category: U.S. ITER Link: Neutronics at Wisconsin, ORNL advances ITER...

  20. University of Wisconsin - Madison | Department of Energy

    Energy Savers [EERE]

    Wisconsin - Madison University of Wisconsin - Madison Team Roster: Austin Renfert, Real Estate and Entrepreneurship; Connor Sawyers, International Business and Marketing; Dustin Wahlquist, Finance and Entrepreneurship; Brigham Starks, Environmental Science; Zezhong Du, Agricultural Economics; Ian Berg, Civil and Environmental Engineering; Wilson Towne, Political Science and Economics; Walker Willis, Electrical Engineering; Joe Snodgrass, Electrical Engineering; Brent Grimm, Computer Engineering;

  1. Wisconsin Better Buildings: Better Business Conference

    Broader source: Energy.gov [DOE]

    Hosted by the Energy Center of Wisconsin and Wisconsin Builders Association, this conference has more than 65 sessions led by regional and national speakers who will guide attendees through the latest in high performance home building and business strategies and practices.

  2. Wisconsin Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Kewaunee Unit 1",566,"4,990",37.6,"Dominion Energy Kewaunee Inc." "Point Beach Nuclear Plant Unit 1, Unit 2","1,018","8,291",62.4,"NextEra Energy Point Beach

  3. Wisconsin Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wisconsin Recovery Act State Memo Wisconsin Recovery Act State Memo Wisconsin has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA)is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Wisconsin are supporting a broad range of clean energy projects from energy efficiency and the smart grid to alternative fuel vehicles. Through these investments, Wisconsin's

  4. Wisconsin Save Energy Now Program | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Map of Midwest U.S. with Wisconsin highlighted Among Wisconsin's economic sectors, the industrial sector represents the highest level of energy consumption. In 2007, this sector consumed approximately 623.5 trillion British thermal units (Btu). Wisconsin's industrial sector includes energy-intensive industries, such as food processing, chemical manufacturing, plastics, and forest products. The Wisconsin Office of Energy Independence, along with its project partners, expanded the Wisconsin Save

  5. Alternative Fuels Data Center: Wisconsin Reduces Emissions With Natural Gas

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Trucks Wisconsin Reduces Emissions With Natural Gas Trucks to someone by E-mail Share Alternative Fuels Data Center: Wisconsin Reduces Emissions With Natural Gas Trucks on Facebook Tweet about Alternative Fuels Data Center: Wisconsin Reduces Emissions With Natural Gas Trucks on Twitter Bookmark Alternative Fuels Data Center: Wisconsin Reduces Emissions With Natural Gas Trucks on Google Bookmark Alternative Fuels Data Center: Wisconsin Reduces Emissions With Natural Gas Trucks on Delicious

  6. Geotechnical applications of CCPs in Wisconsin

    SciTech Connect (OSTI)

    Edil, T.C.; Benson, C.H.

    2006-07-01

    The article reports research case histories on applications of coal combustion products (CCPs) in Wisconsin developed by the University of Wisconsin Consortium for Fly Ash Use in Geotechnical Applications (FAUGA). Fly ash was used to stabilize poor soils during construction of Wisconsin State Highway (STH) 60, and bottom ash was used as a granular working platform. Long term performance is proving good. Nearly all Class C fly ash in Wisconsin is now used in construction. Leaching characteristics of pavements incorporating fly ash are being monitored by pan lysimeters underneath. A computer model, WiscLEACH has been developed to predict the maximum concentration of chemicals in ground water adjacent to roadways using CCPs. 1 photo.

  7. Cambridge, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Cambridge is a village in Dane County and Jefferson County, Wisconsin. It falls under...

  8. Unity, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Unity is a village in Clark County and Marathon County, Wisconsin. It falls under...

  9. Clean Cities: Wisconsin Clean Cities coalition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    as co-director for South Shore Clean Cities of Northern Indiana from 2005-2011. Her dedication to the Clean Cities' mission extends north to Wisconsin where she has served as...

  10. Village of Cashton, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    www.cashton.com Twitter: @CashtonWi Facebook: https:www.facebook.comCashtonWi?refbrtf Outage Hotline: 608-654-7828 References: EIA Form EIA-861 Final Data File for...

  11. Wisconsin Rapids W W & L Comm | Open Energy Information

    Open Energy Info (EERE)

    W W & L Comm Jump to: navigation, search Name: Wisconsin Rapids W W & L Comm Place: Wisconsin Phone Number: 715.423.6300 Website: wrwwlc.com Twitter: @wrwwlc Outage Hotline: (715)...

  12. Port Edwards, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Port Edwards is a village in Wood County, Wisconsin. It falls under Wisconsin's 7th...

  13. Wisconsin Business Sheds Light on Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wisconsin Business Sheds Light on Lighting Wisconsin Business Sheds Light on Lighting April 29, 2010 - 4:59pm Addthis When this photograph was taken, the upper floors of ...

  14. Blue Mounds, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Blue Mounds is a village in Dane County, Wisconsin. It falls under Wisconsin's 2nd...

  15. Big Bend, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Big Bend is a village in Waukesha County, Wisconsin. It falls under Wisconsin's 1st...

  16. Village of Gresham, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Wisconsin (Utility Company) Jump to: navigation, search Name: Village of Gresham Place: Wisconsin Phone Number: (715) 787-3244 or 950-555-4321 Website: www.greshamwi.com Outage...

  17. Wisconsin Summary of Reported Data | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Summary of data reported by Better Buildings Neighborhood Program partner Wisconsin. PDF icon Wisconsin Summary of Reported Data More Documents & Publications Virginia -- SEP Summary of Reported Data University Park Summary of Reported Data NYSERDA Summary of Reported Data

  18. University of Wisconsin-Madison - Poroelastic Tomography | Department of

    Energy Savers [EERE]

    Energy University of Wisconsin-Madison - Poroelastic Tomography University of Wisconsin-Madison - Poroelastic Tomography Armed with a wealth of data and new data analysis and integration techniques, images of the subsurface are getting clearer. Image Source: University of Wisconsin-Madison Armed with a wealth of data and new data analysis and integration techniques, images of the subsurface are getting clearer. Image Source: University of Wisconsin-Madison The images and behavior of

  19. Workplace Charging Challenge Partner: University of Wisconsin-Madison |

    Energy Savers [EERE]

    Department of Energy of Wisconsin-Madison Workplace Charging Challenge Partner: University of Wisconsin-Madison Workplace Charging Challenge Partner: University of Wisconsin-Madison The University of Wisconsin-Madison (UW-Madison) seeks to be a living model for sustainability, exemplifying values and actions that demonstrate their commitment to stewardship of resources, respect for place and the health and well-being of the broader community, now and for the future. Responding to increased

  20. St. Croix Chippewa Indians of Wisconsin - Biomass Power Development

    Energy Savers [EERE]

    Bio Mass Electrical Generation on Tribal Lands St. Croix Chippewa Indians of Wisconsin 2 The St. Croix Chippewa Indians of Wisconsin are located in northwestern Wisconsin. The reservation lands are scattered throughout three counties; Burnett, Polk, and Barron. The Tribal communities are located within the State of Wisconsin's logging industry districts. 3 Currently, Gaming is the Tribe's best asset to assist in improving the level of poverty prevalent on the reservation. The Tribe recognizes,

  1. SEP Success Story: Helping Wisconsin Small Businesses Increase

    Energy Savers [EERE]

    Sustainability | Department of Energy Helping Wisconsin Small Businesses Increase Sustainability SEP Success Story: Helping Wisconsin Small Businesses Increase Sustainability June 28, 2012 - 9:14am Addthis The Wisconsin Profitable Sustainability Initiative (PSI), an innovative, customizable and highly-effective program of the Wisconsin Manufacturing Extension Partnership (WMEP), demonstrates the range of economic, social and environmental benefits that can be realized by the state's small

  2. Helping Wisconsin Small Businesses Increase Sustainability | Department of

    Energy Savers [EERE]

    Energy Helping Wisconsin Small Businesses Increase Sustainability Helping Wisconsin Small Businesses Increase Sustainability June 28, 2012 - 3:51pm Addthis The Wisconsin Profitable Sustainability Initiative (PSI), an innovative, customizable and highly-effective program of the Wisconsin Manufacturing Extension Partnership (WMEP), demonstrates the range of economic, social and environmental benefits that can be realized by the state's small and midsize manufacturers through the implementation

  3. Energy Secretary Steven Chu Meets with Wisconsin Governor Jim Doyle |

    Office of Environmental Management (EM)

    Department of Energy Meets with Wisconsin Governor Jim Doyle Energy Secretary Steven Chu Meets with Wisconsin Governor Jim Doyle March 3, 2009 - 12:00am Addthis Washington, D.C. - U.S. Energy Secretary Steven Chu met with Wisconsin Governor Jim Doyle today about the important investments in the President's American Recovery and Reinvestment Act - investments that will help Wisconsin and other states to create jobs, save families on their energy bills and address the climate crisis. Secretary

  4. WISCONSIN CITIES WORK TOGETHER TO ADVANCE UPGRADES | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    WISCONSIN CITIES WORK TOGETHER TO ADVANCE UPGRADES When Milwaukee, Madison, and Racine, Wisconsin, decided to work together, the result was three programs that benefited from shared ideas and individual community support. With $20 million in seed funding from the U.S. Department of Energy's Better Buildings Neighborhood Program, the Wisconsin Energy Conservation Corporation (WECC) created Wisconsin Energy Efficiency (We2) to upgrade residential and commercial buildings and support job creation

  5. Alternative Fuels Data Center: Wisconsin Transportation Data for

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Alternative Fuels and Vehicles Wisconsin Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Wisconsin Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Wisconsin Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Wisconsin Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data

  6. Milwaukee, Wisconsin: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This brochure provides an overview of the challenges and successes of Milwaukee, WI, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  7. Madison, Wisconsin: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This brochure provides an overview of the challenges and successes of Madison, WI, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  8. Mastermind Session: Wisconsin Energy Conservation Corporation

    Broader source: Energy.gov [DOE]

    Better Buildings Neighborhood Program Peer Exchange Call: Program Sustainability Mastermind Session, featuring host Brian Driscoll, Wisconsin Energy Conservation Corporation. Call Slides and Discussion Summary, November 15, 2012. This was the third Peer Exchange Call in the new series on program sustainability. This session was modeled on the Mastermind" format used at the July 2012 Residential Energy Efficiency Solutions conference. The call focused on generating program sustainability strategy ideas for a particular local program.

  9. This Month's Feature on .EDUconnections: University of Wisconsin-Madison |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy This Month's Feature on .EDUconnections: University of Wisconsin-Madison This Month's Feature on .EDUconnections: University of Wisconsin-Madison April 15, 2011 - 3:10pm Addthis Andy Oare Andy Oare Former New Media Strategist, Office of Public Affairs This month, .EDUconnections, puts the spotlight on the University of Wisconsin. UW-Madison ranks as one of the most prolific research universities in the world, providing a learning environment where faculty, staff and

  10. Village of Waunakee, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Facebook: https:www.facebook.compagesVillage-of-Waunakee-WI282084728476060?refhl Outage Hotline: 608-849-4111 After Hours References: EIA Form EIA-861 Final Data...

  11. Barron County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Barron County, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 45.3607574, -91.776948 Show Map Loading map... "minzoom":false,"mappi...

  12. Door County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Door County, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 45.1113873, -87.0470884 Show Map Loading map... "minzoom":false,"mappin...

  13. Clean Energy Projects Helping Wisconsin Tribe Achieve Sustainability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Projects Helping Wisconsin Tribe Achieve Sustainability Goals Clean Energy Projects ... 2.0 megawatt anaerobic digester to convert food waste into biogas; An LED lighting project ...

  14. Winnebago County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Winnebago County, Wisconsin Malczewski Product Design LLC Renewegy Systems LLC Utica Energy LLC formerly Algoma Ethanol Energy...

  15. WISCONSIN CITIES WORK TOGETHER TO ADVANCE UPGRADES | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    When Milwaukee, Madison, and Racine, Wisconsin, decided to work together, the result was three programs that benefited from shared ideas and individual community support. With 20 ...

  16. Green Grove, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Grove, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.9055292, -90.5068824 Show Map Loading map... "minzoom":false,"mappingservi...

  17. Milwaukee County, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Climate Zone Subtype A. Registered Energy Companies in Milwaukee County, Wisconsin A.O. Smith Johnson Controls Optima Batteries Oskosh Tech Laboratories Inc WE Energies Energy...

  18. Waukesha County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Demonstration Project Registered Energy Companies in Waukesha County, Wisconsin A.O. Smith Johnson Controls Magnatek Inc Optima Batteries Oskosh Tech Laboratories Inc WE...

  19. Wisconsin's 5th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Project Registered Energy Companies in Wisconsin's 5th congressional district A.O. Smith Johnson Controls Magnatek Inc Optima Batteries Oskosh Tech Laboratories Inc WE...

  20. Sun Prairie, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Sun Prairie, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 43.1836046, -89.2137254 Show Map Loading map... "minzoom":false,"mappin...

  1. Rib Falls, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  2. McMillan, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Wisconsin.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  3. Rib Mountain, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleRibMountain,Wisconsin&oldi...

  4. Blooming Grove, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleBloomingGrove,Wisconsin&ol...

  5. Dell Prairie, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    ":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Dell Prairie is a town in Adams County, Wisconsin.1 References US Census Bureau Incorporated place and minor...

  6. Strongs Prairie, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    ","group":"","inlineLabel":"","visitedicon":"" Hide Map Strongs Prairie is a town in Adams County, Wisconsin.1 References US Census Bureau Incorporated place and minor...

  7. Big Flats, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Big Flats, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.111913, -89.8079032 Show Map Loading map... "minzoom":false,"mappingse...

  8. Workplace Charging Challenge Partner: University of Wisconsin Oshkosh

    Broader source: Energy.gov [DOE]

    With a deep sense of responsibility and the increasingly common vision of resilient, prosperous communities, the University of Wisconsin Oshkosh (UW Oshkosh) committed to reducing its ecological...

  9. Pleasant Springs, Wisconsin: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Springs, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 42.9971945, -89.189643 Show Map Loading map... "minzoom":false,"mappingserv...

  10. Eau Claire County, Wisconsin: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Eau Claire County, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7683909, -91.2891036 Show Map Loading map......

  11. Wisconsin Natural Gas Deliveries to Electric Power Consumers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Deliveries to Electric Power Consumers (Million Cubic Feet) Wisconsin Natural Gas Deliveries to Electric Power Consumers (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug...

  12. SEP Success Story: Helping Wisconsin Small Businesses Increase...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Helping Wisconsin Small Businesses Increase Sustainability SEP Success Story: Helping ... SEP Success Story: Local Program Helps Alabama Manufacturers Add Jobs, Reduce Waste and ...

  13. DOE - Office of Legacy Management -- Allis-Chalmers Co - WI 01

    Office of Legacy Management (LM)

    Year: 1987 WI.01-1 Site Operations: Manufactured electrical equipment - pumps, motors, and switchgears for K-25 and Y-12. WI.01-1 Site Disposition: Eliminated - Scope of...

  14. Adams County, Wisconsin ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Adams County, Wisconsin ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Adams County, Wisconsin ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  15. Wisconsin collector-efficiency study, phase two

    SciTech Connect (OSTI)

    Abright, B.L.

    1982-01-15

    The collector efficiency study developed a solar collector rating methodology specific to Wisconsin conditions. Existing rating programs were researched and a collector methodology was developed. A computer program was written to calculate the collector ratings and 25 collector models were rated. The accuracy of the proposed rating methodology was evaluated for 16 collectors placed in 11 domestic hot water systems. One liquid space heating analysis with storage and one air space heating analysis without storage were completed. A solar assisted heat pump in which the solar collectors function as evaporators was also analyzed.

  16. Comparison of Home Retrofit Programs in Wisconsin

    SciTech Connect (OSTI)

    Cunningham, Kerrie; Hannigan, Eileen

    2013-03-01

    To explore ways to reduce customer barriers and increase home retrofit completions, several different existing home retrofit models have been implemented in the state of Wisconsin. This study compared these programs' performance in terms of savings per home and program cost per home to assess the relative cost-effectiveness of each program design. However, given the many variations in these different programs, it is difficult to establish a fair comparison based on only a small number of metrics. Therefore, the overall purpose of the study is to document these programs' performance in a case study approach to look at general patterns of these metrics and other variables within the context of each program. This information can be used by energy efficiency program administrators and implementers to inform home retrofit program design. Six different program designs offered in Wisconsin for single-family energy efficiency improvements were included in the study. For each program, the research team provided information about the programs' approach and goals, characteristics, achievements and performance. The program models were then compared with performance results-program cost and energy savings-to help understand the overall strengths and weaknesses or challenges of each model.

  17. Comparison of Home Retrofit Programs in Wisconsin

    SciTech Connect (OSTI)

    Cunningham, K.; Hannigan, E.

    2013-03-01

    To explore ways to reduce customer barriers and increase home retrofit completions, several different existing home retrofit models have been implemented in the state of Wisconsin. This study compared these programs' performance in terms of savings per home and program cost per home to assess the relative cost-effectiveness of each program design. However, given the many variations in these different programs, it is difficult to establish a fair comparison based on only a small number of metrics. Therefore, the overall purpose of the study is to document these programs' performance in a case study approach to look at general patterns of these metrics and other variables within the context of each program. This information can be used by energy efficiency program administrators and implementers to inform home retrofit program design. Six different program designs offered in Wisconsin for single-family energy efficiency improvements were included in the study. For each program, the research team provided information about the programs' approach and goals, characteristics, achievements and performance. The program models were then compared with performance results -- program cost and energy savings -- to help understand the overall strengths and weaknesses or challenges of each model.

  18. TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY Milwaukee, WI July 1998

    Office of Environmental Management (EM)

    Milwaukee, WI July 1998 The Topic Group is developing a process to identify appropriate Topic Group membership, and will be working on a protocol for identifying and inviting individual tribes to participate he group identified five actions: (1) catalogue tribal transportation issues; (2) identify a level of tribal awareness of DOE transportation issues; (3) examine funding and tribal support; (4) develop a process for Tribal Topic Group membership; and (5) review the best channels to

  19. US hydropower resource assessment for Wisconsin

    SciTech Connect (OSTI)

    Conner, A.M.; Francfort, J.E.

    1996-05-01

    The Department of Energy is developing an estimate of the undeveloped hydropower potential in this country. The Hydropower Evaluation Software is a computer model that was developed by the Idaho National Engineering Laboratory for this purpose. The software measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven software program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report details the resource assessment results for the State of Wisconsin.

  20. Mined land reclamation in Wisconsin since 1973

    SciTech Connect (OSTI)

    Hunt, T.C.

    1989-01-01

    Reclamation has long been recognized as an essential action necessary to mitigate the degradation of land caused by mining activities. But, it is only within the past several decades that reclamation has become an integral component of the mineral extraction process. While the Metallic Mining Reclamation Act (MMRA) was passed in 1973, Wisconsin is yet to enact comprehensive state-wide reclamation requirements for mining other than metallic minerals and the code for metallic mining has yet to establish procedures and standards for reclamation success, specifically revegetation and postmining land use. This study integrates several interdisciplinary methodologies including a history of reclamation; an inventory and status report of mined lands; a critique and comparison of existing reclamation policy with previous state and current federal reclamation policies; in-field case studies of revegetation parameters, procedures, and performance standards; and an economic analysis of reclamation technology. This study makes three major recommendations: (1) The metallic mining code should be amended to establish vegetation parameters, measuring methods, and performance standards for revegetation success similar to those contained in the federal Surface Mining Control and Reclamation Act (SMCRA); (2) The metallic mining code should be amended to resolve semantic loopholes by clearly defining the endpoints of terms such as restoration, reclamation, and rehabilitation and by utilizing the reclamation continuum as a planning tool for determining acceptable postmining land use alternatives; and (3) Mandatory statewide nonmetallic legislation should be enacted to strengthen the mineral resource management program in Wisconsin by systematically and uniformly regulating the mining and reclamation of nonmetallic minerals, the state's most important mineral resource.

  1. Brown County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Brown County is a county in Wisconsin. Its FIPS County Code is 009. It is classified as...

  2. Village of Belmont, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Belmont Place: Wisconsin Phone Number: 608-762-5142 Website: www.belmontwi.comutilities.ph Outage Hotline: 608-642-0152 After Hours References: EIA Form EIA-861 Final Data File...

  3. Village of Muscoda, Wisconsin (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    of Muscoda Place: Wisconsin Phone Number: (608) 739-4617 Website: muscoda.files.wordpress.com20 Outage Hotline: (608) 739-4617 References: EIA Form EIA-861 Final Data File...

  4. City of Argyle, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    of Argyle Place: Wisconsin Phone Number: (608)543-3113 Website: argylewi.orgvillage.htmlgovt Outage Hotline: (608)543-3113 References: EIA Form EIA-861 Final Data File for...

  5. Oneida Tribe of Indians of Wisconsin – 2015 Project

    Broader source: Energy.gov [DOE]

    The Oneida Tribe of Indians of Wisconsin (OTIW) plans to install solar photovoltaic (PV) arrays on the roofs of up to nine tribal buildings. Each building will undergo the necessary engineering and design to meet system and code requirements.

  6. Green County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is classified as ASHRAE 169-2006 Climate Zone Number 6 Climate Zone Subtype A. Registered Energy Companies in Green County, Wisconsin Badger State Ethanol LLC Places in Green...

  7. Taylor County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Wisconsin. Its FIPS County Code is 119. It is classified as...

  8. Adams County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Adams County is a county in Wisconsin. Its FIPS County Code is 001. It is classified as...

  9. Wisconsin's 2nd congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    in Wisconsin's 2nd congressional district BEST Energies Inc Badger State Ethanol LLC Biodiesel Systems LLC C5 6 Technologies Inc CDH Energy CleanTech Partners Didion Ethanol...

  10. Dane County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Energy Institute Registered Energy Companies in Dane County, Wisconsin BEST Energies Inc Biodiesel Systems LLC C5 6 Technologies Inc CleanTech Partners Focus On Energy Fuel Cells...

  11. Jackson County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Wisconsin. Its FIPS County Code is 053. It is classified as...

  12. Alliant Energy (Wisconsin Power and Light) - Farm Wiring Grant...

    Broader source: Energy.gov (indexed) [DOE]

    Alliant Energy Website http:www.alliantenergy.comSaveEnergyAndMoneyRebatesFarmWIindex.htm State Wisconsin Program Type Grant Program Rebate Amount 1,000 + 50% of...

  13. How a Wisconsin Nature Center is Leading by Example

    Broader source: Energy.gov [DOE]

    With funding from the U.S. Department of Energy, this Wisconsin nature center will be at the forefront in demonstrating the latest energy efficiency and renewable energy technologies to thousands of visitors every year.

  14. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Wisconsin Regions National Science Bowl® (NSB) NSB Home About High School High School Students High School Coaches High School Regionals High School Rules, Forms, and Resources Middle School Attending National Event Volunteers 2015 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: Email Us High School Regionals Wisconsin Regions Print Text

  15. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Wisconsin Regions National Science Bowl® (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School Rules, Forms, and Resources Attending National Event Volunteers 2015 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: Email Us Middle School Regionals Wisconsin Regions

  16. Wisconsin Natural Gas Underground Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Wisconsin Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 331 428 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Withdrawals of Natural Gas from Underground Storage - All Operators Wisconsin Underground Natural Gas

  17. Identified Patent Waiver W(I)2008-005 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    08-005 Identified Patent Waiver W(I)2008-005 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by GOURLEY, PAUL under agreement DE-AC04-94AL85000, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. PDF icon Identified Patent Waiver W(I)2008-005 More Documents & Publications Identified Patent Waiver W(I)2011-004 Identified Patent

  18. WiTec at Sandia: Pushing a Great Tool Further. (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect WiTec at Sandia: Pushing a Great Tool Further. Citation Details In-Document Search Title: WiTec at Sandia: Pushing a Great Tool Further. Abstract not provided. Authors: Beechem Iii, Thomas Edwin Publication Date: 2012-09-01 OSTI Identifier: 1116404 Report Number(s): SAND2012-8071C 480446 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: WiTec Research&Development Meeting held September 24-27, 2012 in Ulm, Germany.; Related Information:

  19. Super Wi-Fi is Super for Energy Too | Department of Energy

    Energy Savers [EERE]

    Wi-Fi is Super for Energy Too Super Wi-Fi is Super for Energy Too September 24, 2010 - 11:45am Addthis Super Wi-Fi is Super for Energy Too Nick Sinai U.S. Deputy Chief Technology Officer, White House Office of Science and Technology Policy What does this mean for me? By integrating broadband into the emerging Smart Grid, consumers will have revolutionized communication with their utility -- they will have detailed information on their energy use that will help inform them how they can save on

  20. Identified Patent Waiver W(I)2010-005 | Department of Energy

    Office of Environmental Management (EM)

    5 Identified Patent Waiver W(I)2010-005 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by UOP, INC. under agreement DE-FG26-04NT42121, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. PDF icon Identified Patent Waiver W(I)2010-005 More Documents & Publications Identified Patent Waiver W(I)2010-006

  1. Identified Patent Waiver W(I)2010-006 | Department of Energy

    Office of Environmental Management (EM)

    6 Identified Patent Waiver W(I)2010-006 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by UOP, INC. under agreement DE-FG26-04NT42121, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. PDF icon Identified Patent Waiver W(I)2010-006 More Documents & Publications Identified Patent Waiver W(I)2010-005

  2. University of Wisconsin-Madison Improves Fuel Efficiency in Advanced Diesel

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Engines | Department of Energy University of Wisconsin-Madison Improves Fuel Efficiency in Advanced Diesel Engines University of Wisconsin-Madison Improves Fuel Efficiency in Advanced Diesel Engines April 15, 2013 - 12:00am Addthis In 2012, a team of researchers at the University of Wisconsin-Madison completed an EERE-supported project to develop high-efficiency combustion engines for light- and heavy-duty vehicles. By combining a number of different strategies, the university team showed a

  3. Better Buildings Challenge-- Milwaukee

    Broader source: Energy.gov [DOE]

    Lead Performer: City of Milwaukee – Milwaukee, WI Partners: -- Franklin Energy, LLC – Port Washington, WI -- Milwaukee Area Technical College – Milwaukee, WI -- Midwest Energy Research Consortium – Milwaukee, WI -- Staples Energy – Pewaukee, WI -- Milwaukee Business Improvement Districts – Milwaukee, WI -- Transwestern Sustainability Services – Milwaukee, WI -- U.S. Green Building Council – Wisconsin Chapter – Milwaukee, WI -- Office of Energy Innovation – Madison, WI -- Focus on Energy – Madison, WI -- BOMA-Wisconsin – Milwaukee, WI

  4. Project Reports for Oneida Tribe of Indians of Wisconsin- 2015 Project

    Broader source: Energy.gov [DOE]

    Under this grant, Oneida Tribe of Indians of Wisconsin plans to install solar photovoltaic (PV) arrays on the roofs of up to nine tribal buildings.

  5. WE Energies | Open Energy Information

    Open Energy Info (EERE)

    Name: WE Energies Place: Milwaukee, Wisconsin Zip: WI 53290 Product: We Energies is the trade name of Wisconsin Electric Power Co and Wisconsin Gas Co, the principal utility...

  6. Oneida Tribe of Indians of Wisconsin Energy Optimization Model

    SciTech Connect (OSTI)

    Troge, Michael

    2014-12-30

    Oneida Nation is located in Northeast Wisconsin. The reservation is approximately 96 square miles (8 miles x 12 miles), or 65,000 acres. The greater Green Bay area is east and adjacent to the reservation. A county line roughly splits the reservation in half; the west half is in Outagamie County and the east half is in Brown County. Land use is predominantly agriculture on the west 2/3 and suburban on the east 1/3 of the reservation. Nearly 5,000 tribally enrolled members live in the reservation with a total population of about 21,000. Tribal ownership is scattered across the reservation and is about 23,000 acres. Currently, the Oneida Tribe of Indians of Wisconsin (OTIW) community members and facilities receive the vast majority of electrical and natural gas services from two of the largest investor-owned utilities in the state, WE Energies and Wisconsin Public Service. All urban and suburban buildings have access to natural gas. About 15% of the population and five Tribal facilities are in rural locations and therefore use propane as a primary heating fuel. Wood and oil are also used as primary or supplemental heat sources for a small percent of the population. Very few renewable energy systems, used to generate electricity and heat, have been installed on the Oneida Reservation. This project was an effort to develop a reasonable renewable energy portfolio that will help Oneida to provide a leadership role in developing a clean energy economy. The Energy Optimization Model (EOM) is an exploration of energy opportunities available to the Tribe and it is intended to provide a decision framework to allow the Tribe to make the wisest choices in energy investment with an organizational desire to establish a renewable portfolio standard (RPS).

  7. Identified Patent Waiver W(I)2010-009 | Department of Energy

    Office of Environmental Management (EM)

    9 Identified Patent Waiver W(I)2010-009 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by SCHWEITZER ENGINEERING LAB INC. under agreement DE-FC26-07NT43311, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. PDF icon Identified Patent Waiver W(I)2010-009 More Documents & Publications Hallmark Cryptographic Serial Communication

  8. Wisconsin-Sourced Lager Yeast - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wisconsin-Sourced Lager Yeast Great Lakes Bioenergy Research Center Contact GLBRC About This Technology Technology Marketing Summary Beer can be divided into two broad categories: ales and lagers. Ales have been brewed for thousands of years. They are warm fermented (up to 80° F) for as little as three weeks using top-fermenting yeast (i.e., yeast that rises when fermentation is complete). In contrast, lagers were first brewed in the 15th century when ale yeast hybridized with an unknown

  9. Simulated Performance of the Wisconsin Superconducting Electron Gun

    SciTech Connect (OSTI)

    R.A. Bosch, K.J. Kleman, R.A. Legg

    2012-07-01

    The Wisconsin superconducting electron gun is modeled with multiparticle tracking simulations using the ASTRA and GPT codes. To specify the construction of the emittance-compensation solenoid, we studied the dependence of the output bunch's emittance upon the solenoid's strength and field errors. We also evaluated the dependence of the output bunch's emittance upon the bunch's initial emittance and the size of the laser spot on the photocathode. The results suggest that a 200-pC bunch with an emittance of about one mm-mrad can be produced for a free-electron laser.

  10. Wisconsin Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Net Withdrawals (Million Cubic Feet) Wisconsin Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's -76 87 76 -93 110 -20 -74 -90 81 54 1990's -10 35 -59 2 -50 85 -60 51 -21 -61 2000's -40 -26 8 -9 45 -23 36 78 51 -18 2010's -29 20 -67 13 58 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date:

  11. Wisconsin Natural Gas LNG Storage Additions (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Additions (Million Cubic Feet) Wisconsin Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 136 238 283 60 272 131 64 74 253 228 1990's 116 167 57 112 266 206 269 143 85 53 2000's 71 76 102 95 49 114 60 148 130 80 2010's 63 107 33 103 196 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date:

  12. Wisconsin Natural Gas LNG Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Wisconsin Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 212 151 207 153 162 151 138 164 172 174 1990's 126 131 117 110 316 120 329 92 106 114 2000's 111 102 94 86 94 90 96 70 79 98 2010's 92 87 100 89 138 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date:

  13. Wisconsin Natural Gas Underground Storage Injections All Operators (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Underground Storage Injections All Operators (Million Cubic Feet) Wisconsin Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 166 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Injections of Natural Gas into Underground

  14. Wisconsin Natural Gas Underground Storage Net Withdrawals All Operators

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Net Withdrawals All Operators (Million Cubic Feet) Wisconsin Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's -166 331 428 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Net Withdrawals of Natural Gas from

  15. New Yellow School Buses Harness the Sun in Wisconsin | Department of Energy

    Office of Environmental Management (EM)

    Yellow School Buses Harness the Sun in Wisconsin New Yellow School Buses Harness the Sun in Wisconsin October 22, 2010 - 2:50pm Addthis Lindsay Gsell "Hybrid electric school buses are helping our school districts save money while reducing energy use and cleaning our air," Wisconsin Governor Jim Doyle said for a ribbon-cutting ceremony for a solar-energy powered bus canopy earlier this year. That solar fueling station in Oconomowoc, Wis. is generating electricity, used to charge 11

  16. Wisconsin Natural Gas % of Total Residential Deliveries (Percent)

    Gasoline and Diesel Fuel Update (EIA)

    % of Total Residential Deliveries (Percent) Wisconsin Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.63 2.64 2.80 2.82 2.73 2.57 2.70 2000's 2.70 2.63 2.81 2.80 2.78 2.72 2.76 2.78 2.87 2.79 2010's 2.58 2.75 2.71 2.92 2.96 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016

  17. Wisconsin Natural Gas Total Consumption (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Consumption (Million Cubic Feet) Wisconsin Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 400,651 368,022 380,560 2000's 393,601 359,784 385,310 394,711 383,316 410,250 372,462 398,370 409,377 387,066 2010's 372,898 393,734 402,656 442,544 462,627 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next

  18. Wisconsin Natural Gas Input Supplemental Fuels (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Input Supplemental Fuels (Million Cubic Feet) Wisconsin Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0 0 0 1970's 0 0 0 0 0 0 0 0 0 0 1980's 2 4 13 2 6 14 1 1 2 5 1990's 1 1 1 3 5 2 21 5 21 0 2000's 0 0 0 0 0 0 0 0 0 0 2010's 0 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date:

  19. Wisconsin Natural Gas Number of Commercial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Commercial Consumers (Number of Elements) Wisconsin Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 96,760 99,157 102,492 1990's 106,043 109,616 112,761 115,961 119,788 125,539 129,146 131,238 134,651 135,829 2000's 140,370 144,050 149,774 150,128 151,907 155,109 159,074 160,614 163,026 163,843 2010's 164,173 165,002 165,657 166,845 167,901 - = No Data Reported; -- = Not Applicable; NA = Not

  20. Wisconsin Natural Gas Number of Industrial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Industrial Consumers (Number of Elements) Wisconsin Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 7,411 7,218 7,307 1990's 7,154 7,194 7,396 7,979 7,342 6,454 5,861 8,346 9,158 9,756 2000's 9,630 9,864 9,648 10,138 10,190 8,484 5,707 5,999 5,969 6,396 2010's 6,413 6,376 6,581 6,677 7,000 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual

  1. Wisconsin Natural Gas Number of Residential Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Residential Consumers (Number of Elements) Wisconsin Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,054,347 1,072,585 1,097,514 1990's 1,123,557 1,151,939 1,182,834 1,220,500 1,253,333 1,291,424 1,324,570 1,361,348 1,390,068 1,426,909 2000's 1,458,959 1,484,536 1,514,700 1,541,455 1,569,719 1,592,621 1,611,772 1,632,200 1,646,644 1,656,614 2010's 1,663,583 1,671,834 1,681,001 1,692,891

  2. Wisconsin Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Wisconsin Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 4,544 4,284 4,151 2000's 4,058 2,869 3,812 3,526 3,302 3,700 3,109 2,851 2,654 1,648 2010's 2,973 2,606 1,780 2,803 3,629 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages:

  3. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Wisconsin

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Wisconsin.

  4. Microsoft Word - DOE-ID-15-044 Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Wisconsin proposes to use an inherent feature of salt- and gas-cooled reactors towards the capture and removal of tritium from the primary coolant system: the presence...

  5. Wisconsin Energy and Cost Savings for New Single- and Multifamily Homes: 2009 and 2012 IECC as Compared to the Wisconsin Uniform Dwelling Code

    SciTech Connect (OSTI)

    Lucas, Robert G.; Taylor, Zachary T.; Mendon, Vrushali V.; Goel, Supriya

    2012-04-01

    The 2009 and 2012 International Energy Conservation Codes (IECC) yield positive benefits for Wisconsin homeowners. Moving to either the 2009 or 2012 IECC from the current Wisconsin state code is cost effective over a 30-year life cycle. On average, Wisconsin homeowners will save $2,484 over 30 years under the 2009 IECC, with savings still higher at $10,733 with the 2012 IECC. After accounting for upfront costs and additional costs financed in the mortgage, homeowners should see net positive cash flows (i.e., cumulative savings exceeding cumulative cash outlays) in 1 year for both the 2009 and 2012 IECC. Average annual energy savings are $149 for the 2009 IECC and $672 for the 2012 IECC.

  6. Microsoft Word - DOE-ID-11-010 Wisconsin - Agasie EC.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 SECTION A. Project Title: NEUP Infrastructure Program: Minor Reactor Upgrades- University of Wisconsin SECTION B. Project Description This project by the University of Wisconsin will: -Upgrade the reactor pool water system with a reverse osmosis system and a capacitance continuous level measurement probe with an associated digital meter display -Upgrade the reactor instrumentation and control systems with a multi-turn rotary absolute encoder along with associated digital readout devise and

  7. Microsoft Word - DOE-ID-13-066 Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6 SECTION A. Project Title: Validation Corrosion of Structural Materials for Advanced Supercritical Carbon-Dioxide Brayton Cycle - University of Wisconsin SECTION B. Project Description The University of Wisconsin proposes to study the supercritical carbon-dioxide (SC-CO 2 ) Brayton cycle to address key materials corrosion and related challenges, identify appropriate materials, and advance the body of scientific knowledge in the area of high temperature SC-CO 2 corrosion. SECTION C.

  8. Microsoft Word - DOE-ID-13-067 Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 SECTION A. Project Title: Component and Technology Development for Advanced Liquid Metal Reactors - University of Wisconsin SECTION B. Project Description The University of Wisconsin proposes to study corrosion resistance in advanced materials, testing of new diffusion bonded heat exchanger technologies, development of O 2 detector, and fiber optic temperature measurements to help improve safety margins and design flexibility critical to improving the performance and economics of liquid metal

  9. Microsoft Word - DOE-ID-14-017 Wisconsin B1-31.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 SECTION A. Project Title: General Scientific Infrastructure Support for University of Wisconsin SECTION B. Project Description The University of Wisconsin proposes to purchase a custom-designed cylindrical chamber for ion implantation and/or ion beam analysis, a sample stage, vacuum components for the PIXE detector, a turbopump for the new implantation chamber, a controlled motor for remote steering of the double slits, a turbopump for a high-current TORVIS source, a helium leak detector, and

  10. Microsoft Word - DOE-ID-14-070 Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 SECTION A. Project Title: Advanced Instrumentation for Transient Reactor Testing - University of Wisconsin SECTION B. Project Description The University of Wisconsin proposes to focus on five distinct task areas for advanced instrumentation for transient reactor testing: 1. Development of innovations for real-time, 'line-of-sight' imaging for a transient test using the current hodoscope concept with advancements in detection and image resolution; 2. Development of novel sensors to measure

  11. Microsoft Word - DOE-ID-15-041 Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 SECTION A. Project Title: Radiation-induced Swelling and Microcracking in SiC Cladding for LWRs - University of Wisconsin SECTION B. Project Description The University of Wisconsin proposes to provide a fundamental basis for continuum models of swelling by measuring the distribution of defect clusters of all sizes and modeling their contribution to swelling and to combine the model of swelling with simulations of microstructural evolution to predict the effect of swelling on microcracking in

  12. Wisconsin, Summary of Reported Data From July 1, 2010 - September 30, 2013

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wisconsin Energy Efficiency Project Summary o f Reported Data From July 1 , 2010 - September 3 0, 2013 Better B uildings Neighborhood Program Report Produced By: U.S. Department of Energy June 2014 WISCONSIN ENERGY EFFICIENCY PROJECT SUMMARY OF REPORTED DATA ACKNOWLEDGMENTS This document presents a summary of data reported by an organization awarded federal financial assistance (e.g., grants, cooperative agreements) through the U.S. Department of Energy's ( DOE's) Better Buildings Neighborhood

  13. Radio-isotope production scale-up at the University of Wisconsin

    SciTech Connect (OSTI)

    Nickles, Robert Jerome

    2014-06-19

    Our intent has been to scale up our production capacity for a subset of the NSAC-I list of radioisotopes in jeopardy, so as to make a significant impact on the projected national needs for Cu-64, Zr-89, Y-86, Ga-66, Br-76, I-124 and other radioisotopes that offer promise as PET synthons. The work-flow and milestones in this project have been compressed into a single year (Aug 1, 2012- July 31, 2013). The grant budget was virtually dominated by the purchase of a pair of dual-mini-cells that have made the scale-up possible, now permitting the Curie-level processing of Cu-64 and Zr-89 with greatly reduced radiation exposure. Mile stones: 1. We doubled our production of Cu-64 and Zr-89 during the grant period, both for local use and out-bound distribution to ≈ 30 labs nationwide. This involved the dove-tailing of beam schedules of both our PETtrace and legacy RDS cyclotron. 2. Implemented improved chemical separation of Zr-89, Ga-66, Y-86 and Sc-44, with remote, semi-automated dissolution, trap-and-release separation under LabView control in the two dual-mini-cells provided by this DOE grant. A key advance was to fit the chemical stream with miniature radiation detectors to confirm the transfer operations. 3. Implemented improved shipping of radioisotopes (Cu-64, Zr-89, Tc-95m, and Ho-163) with approved DOT 7A boxes, with a much-improved FedEx shipping success compared to our previous steel drums. 4. Implemented broad range quantitative trace metal analysis, employing a new microwave plasma atomic emission spectrometer (Agilent 4200) capable of ppb sensitivity across the periodic table. This new instrument will prove essential in bringing our radiometals into FDA compliance needing CoA’s for translational research in clinical trials. 5. Expanded our capabilities in target fabrication, with the purchase of a programmable 1600 oC inert gas tube furnace for the smelting of binary alloy target materials. A similar effort makes use of our RF induction furnace, allowing small scale metallurgy with greater control. This alloy feedstock was then used to electroplate cyclotron targets with elevated melting temperatures capable of withstanding higher beam currents. 6. Finished the beam-line developments needed for the irradiation of low-melting target materials (Se and Ga) now being used for the production of Br-76, and radioactive germanium (68, 69, 71Ge). Our planned development of I-124 production has been deferred, given the wide access from commercial suppliers. The passing of these milestones has been the subject of the previous quarterly reports. These signature accomplishments were made possible by the DOE support, and have strengthened the infrastructure at the University of Wisconsin, provided the training ground for a very talented graduate research assistant (Mr. Valdovinos) and more than doubled our out-shipments of Cu-64 and Zr-89.

  14. Wisconsin Natural Gas Pipeline and Distribution Use Price (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Wisconsin Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.26 0.23 0.23 1970's 0.25 0.25 0.26 0.27 0.30 0.44 0.54 1.74 2.09 1.61 1980's 4.50 2.83 3.53 3.52 3.52 3.30 2.79 2.29 2.12 2.04 1990's 2.14 1.31 1.26 0.96 1.36 0.36 1.20 1.16 0.95 2.56 2000's 3.32 3.67 NA -- -- -- - = No Data Reported; -- = Not Applicable;

  15. U.S. Energy Secretary Chu and Deputy Secretary Poneman to Visit Wisconsin,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Texas to Call for Extension of Clean Energy Tax Credits | Department of Energy Chu and Deputy Secretary Poneman to Visit Wisconsin, Texas to Call for Extension of Clean Energy Tax Credits U.S. Energy Secretary Chu and Deputy Secretary Poneman to Visit Wisconsin, Texas to Call for Extension of Clean Energy Tax Credits July 12, 2012 - 9:46am Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - Tomorrow, July 12, 2012, U.S. Secretary of Energy Steven Chu and Deputy Secretary of Energy Daniel

  16. Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Milwaukee, WI, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  17. Madison, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Madison, WI, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  18. Creating Jobs through Energy Efficiency Using Wisconsin's Successful Focus on Energy Program

    SciTech Connect (OSTI)

    Akhtar, Masood; Corrigan, Edward; Reitter, Thomas

    2012-03-30

    The purpose of this project was to provide administrative and technical support for the completion of energy efficiency projects that reduce energy intensity and create or save Wisconsin industrial jobs. All projects have been completed. Details in the attached reports include project management, job development, and energy savings for each project.

  19. EA-1862: Oneida Seven Generation Corporation Waste-To-Energy System, Ashwaubenon, Wisconsin

    Broader source: Energy.gov [DOE]

    Oneidas Energy Recovery Project would construct and operate a solid waste-to-electricity power plant on vacant property within the Bayport Industrial Center in the City of Green Bay, Brown County, Wisconsin. This energy recovery process would involve bringing municipal solid waste into the plant for sizing (shredding), sorting (removing recyclable material), and conveying into one of three pyrolytic gasification systems.

  20. EA-1813: Forest County Potawatomi Comprehensive Renewable Energy Project, Carter or Crandon (Stone Lake), Wisconsin

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to provide a grant under the DOE Community Renewable Energy Grant Program to produce up to 38,700 MWhs of renewable electricity by local utilities in Crandon, Wisconsin. This EA is on hold.

  1. Microsoft Word - DOE-ID-14-066 University of Wisconsin EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6 SECTION A. Project Title: Development of Self-Healing Zirconium Silicide Coatings for Improved Performance of Zirconium- Alloy Fuel Cladding - University of Wisconsin SECTION B. Project Description The objectives of the proposed research by the University of Wisconsin will be: (1) development of Zr-silicide coatings on Zr- alloy substrates, (2) corrosion studies of Zr-silicide coatings in normal reactor environment and LOCA conditions, including a fundamental understanding of thermodynamic and

  2. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  3. ,"Wisconsin Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Annual",2015 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3035wi3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035wi3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:24:57 PM" "Back to

  4. Legal obstacles and incentives to the development of small scale hydroelectric potential in Wisconsin

    SciTech Connect (OSTI)

    None,

    1980-05-01

    The legal and institutional obstacles to the development of small-scale hydroelectric energy at the state level are discussed. The Federal government also exercises extensive regulatory in the area, and the dual regulatory system from the standpoint of the appropriate legal doctrine, the law of pre-emption, application of the law to the case of hydroelectric development, and an inquiry into the practical use of the doctrine by the FERC is examined. The initial obstacle that all developers confront in Wisconsin is obtaining the authority to utilize the bed, banks, and flowing water at a proposed dam site. This involves a determination of ownership of the stream banks and bed and the manner of obtaining either their title or use; and existing constraints with regard to the use of the water. Wisconsin follows the riparian theory of water law.

  5. University of Wisconsin, Madison | OSTI, US Dept of Energy, Office of

    Office of Scientific and Technical Information (OSTI)

    Scientific and Technical Information University of Wisconsin, Madison Spotlights Home DOE Applauds UW-Madison Science and Technical Programs UW-Madison Energy Institute DOE Great Lakes Bioenergy Research Center Core research programs span the biofuels pipeline, from creating improved biofuel feedstocks to developing improved processing techniques and catalysts, to ensuring the sustainability of the entire cycle 2010 GLBRC Science Report * Roadmap to Technological Success UM-Madison campus

  6. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  7. Atmospheric Emitted Radiance Interferometer (AERI) Archived Data at the University of Wisconsin Space Science and Engineering Center (SSEC)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The AERI instrument is an advanced version of the high spectral resolution interferometer sounder (HIS) designed and fabricated at the University of Wisconsin (Revercomb et al. 1988) to measure upwelling infrared radiances from an aircraft. The AERI is a fully automated ground-based passive infrared interferometer that measures downwelling atmospheric radiance from 3.3 - 18.2 mm (550 - 3000 cm-1) at less than 10-minute temporal resolution with a spectral resolution of one wavenumber. It has been used in DOEs Atmospheric Radiation Measurement (ARM) program. Much of the data available here at the Cooperative Institute for Meteorological Satellite Studies (CIMSS), an institute within the University of Wisconsins Space Science and Engineering Center, may also be available in the ARM Archive. On this website, data and images from six different field experiments are available, along with AERIPLUS realtime data for the Madison, Wisconsin location. Realtime data includes temperature and water vapor time-height cross sections, SKEWT diagrams, convective stability indices, and displays from a rooftop Lidar instrument. The field experiments took place in Oaklahoma and Wisconsin with the AERI prototype.

  8. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  9. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's Strategy: "Catch and Subdue" Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment Read more about Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement Read more about General Atomics (GA) Fusion News: A

  10. Sowing the Seeds for a Bountiful Harvest: Shaping the Rules and Creating the Tools for Wisconsin's Next Generation of Wind Farms

    SciTech Connect (OSTI)

    Vickerman, Michael Jay

    2012-03-29

    Project objectives are twofold: (1) to engage wind industry stakeholders to participate in formulating uniform permitting standards applicable to commercial wind energy installations; and (2) to create and maintain an online Wisconsin Wind Information Center to enable policymakers and the public to increaser their knowledge of and support for wind generation in Wisconsin.

  11. Energy baseline and energy efficiency resource opportunities for the Forest Products Laboratory, Madison, Wisconsin

    SciTech Connect (OSTI)

    Mazzucchi, R.P.; Richman, E.E.; Parker, G.B.

    1993-08-01

    This report provides recommendations to improve the energy use efficiency at the Forest Products Laboratory in Madison, Wisconsin. The assessment focuses upon the four largest buildings and central heating plant at the facility comprising a total of approximately 287,000 square feet. The analysis is comprehensive in nature, intended primarily to determine what if any energy efficiency improvements are warranted based upon the potential for cost-effective energy savings. Because of this breadth, not all opportunities are developed in detail; however, baseline energy consumption data and energy savings concepts are described to provide a foundation for detailed investigation and project design where warranted.

  12. Effect of RF Gradient upon the Performance of the Wisconsin SRF Electron Gun

    SciTech Connect (OSTI)

    Bosch, Robert; Legg, Robert A.

    2013-12-01

    The performance of the Wisconsin 200-MHz SRF electron gun is simulated for several values of the RF gradient. Bunches with charge of 200 pC are modeled for the case where emittance compensation is completed during post-acceleration to 85 MeV in a TESLA module. We first perform simulations in which the initial bunch radius is optimal for the design gradient of 41 MV/m. We then optimize the radius as a function of RF gradient to improve the performance for low gradients.

  13. ,"Wisconsin Natural Gas Consumption by End Use"

    U.S. Energy Information Administration (EIA) Indexed Site

    Consumption by End Use" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Wisconsin Natural Gas Consumption by End Use",6,"Monthly","12/2015","1/15/1989" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  14. ,"Wisconsin Natural Gas LNG Storage Net Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    LNG Storage Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Wisconsin Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  15. ,"Wisconsin Natural Gas Vehicle Fuel Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Consumption (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Wisconsin Natural Gas Vehicle Fuel Consumption (MMcf)",1,"Monthly","12/2015" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  16. Acute effect of indoor exposure to paint containing bis(tributyltin) oxide--Wisconsin, 1991

    SciTech Connect (OSTI)

    Not Available

    1991-05-03

    In January 1991, a woman in Wisconsin contacted her local public health department to report that she and her two children had become ill after her landlord painted the walls and ceilings of two rooms of her apartment. Reported symptoms included a burning sensation in the nose and forehead, headache, nose bleed, cough, loss of appetite, nausea, and vomiting. The woman, who was in the third trimester of pregnancy, also complained of a persistent odor from the paint and provided an empty bottle of a paint additive used for mildew control. The label indicated that this product contained 25% bis(tributyltin) oxide (TBTO) as its only active ingredient.

  17. LAST FIRST INSTITUTION EMAIL Alvarado Fernando Wisconsin flalvarado@gmail.com

    Office of Environmental Management (EM)

    LAST FIRST INSTITUTION EMAIL Alvarado Fernando Wisconsin flalvarado@gmail.com Anderson Lindsay Cornell cla28@cornell.edu Birman Ken Cornell ken@cs.cornell.edu Bindewald Gil DOE Gilbert.Bindewald@hq.doe.gov Bitar Eilyan Cornell eyb5@cornell.edu Bojanczyk Adam Cornell adamb@ece.cornell.edu Bose Subhonmesh Cornell University sb2333@cornell.edu Causgrove Patrick Bigwood Pat@bigwood-systems.com Chiang Hsiao-Dong Cornell hc63@cornell.edu Dominguez-Garcia Alejandro U Illinois aledan@illinois.edu Eto

  18. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  19. Trace metal levels and partitioning in Wisconsin rivers: Results of background trace metals study

    SciTech Connect (OSTI)

    Shafer, M.M.; Overdier, J.T.; Armstrong, D.E.; Hurley, J.P.; Webb, D.A.

    1994-12-31

    Levels of total and filtrable Ag, Al, Cd, Cu, Pb, and Zn in 41 Wisconsin rivers draining watersheds of distinct homogeneous characteristics (land use/cover, soil type, surficial geology) were quantified. Levels, fluxes, and yields of trace metals are interpreted in terms of principal geochemical controls. The study samples were also used to evaluate the capability of modern ICP-MS techniques for ``background`` level quantification of metals. Order-of-magnitude variations in levels of a given metal between sites was measured. This large natural variance reflects influences of soil type, dissolved organic matter (DOC), ionic strength, and suspended particulate matter (SPM) on metal levels. Significant positive correlations between DOC levels and filtrable metal concentrations were observed, demonstrating the important role that DOC plays in metal speciation and behavior. Systematic, chemically consistent, differences in behavior between the metals is evident with partition coefficients (K,) and fraction in particulate forms ranking in the order: Al > Pb > Zn > Cr >Cd > Cu. Total metal yields correlate well with SPM yields, especially for highly partitioned elements, whereas filtrable metal yields reflect the interplay of partitioning and water yield. The State of Wisconsin will use these data in a re-evaluation of regulatory limits and in the development of water effects ratio criteria.

  20. Atmospheric Data, Images, and Animations from Lidar Instruments used by the University of Wisconsin Lidar Group

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The Space Science and Engineering Center is a research and development center affiliated with the University of Wisconsin-Madison’s Graduate School. Its primary focus is on geophysical research and technology to enhance understanding of the atmosphere of Earth, the other planets in the Solar System, and the cosmos. SSEC develops new observing tools for spacecraft, aircraft, and ground-based platforms, and models atmospheric phenomena. The Center receives, manages and distributes huge amounts of geophysical data and develops software to visualize and manipulate these data for use by researchers and operational meteorologists all over the world.[Taken from About SSEC at http://www.ssec.wisc.edu/overview/] A huge collection of data products, images, and animations comes to the SSEC from the University of Wisconsin Lidar Group. Contents of this collection include: • An archive of thousands of Lidar images acquired before 2004 • Arctic HSRL, MMCR, PAERI, MWR, Radiosonde, and CRAS forecast data Data after May 1, 2004 • MPEG animations and Lidar Multiple Scattering Models

  1. Replacement of Lighting Fixtures with LED Energy Efficient Lights at the Parking Facility, Milwaukee, Wisconsin

    SciTech Connect (OSTI)

    David Brien

    2012-06-21

    The Forest County Potawatomi Community (FCPC or Tribe) owns a six-story parking facility adjacent to its Potawatomi Bingo Casino (the Casino) in Milwaukee, Wisconsin, as well as a valet parking facility under the Casino (collectively, the Parking Facility). The Parking Facility contained 205-watt metal halide-type lights that, for security reasons, operated 24 hours per day, 7 days per week. Starting on August 30, 2010, the Tribe replaced these fixtures with 1,760 state-of-the-art, energy efficient 55-Watt LED lights. This project resulted in an immediate average reduction in monthly peak demand of 238 kW over the fourth quarter of 2010. The average reduction in monthly peak demand from October 1 through December 31, 2010 translates into a forecast annual electrical energy reduction of approximately 1,995,000 kWh or 47.3% of the pre-project demand. This project was technically effective, economically feasible, and beneficial to the public not only in terms of long term energy efficiency and associated emissions reductions, but also in the short-term jobs provided for the S.E. Wisconsin region. The project was implemented, from approval by U.S. Department of Energy (DOE) to completion, in less than 6 months. The project utilized off-the-shelf proven technologies that were fabricated locally and installed by local trade contractors.

  2. Atmospheric Data, Images, and Animations from Lidar Instruments used by the University of Wisconsin Lidar Group

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The Space Science and Engineering Center is a research and development center affiliated with the University of Wisconsin-Madisons Graduate School. Its primary focus is on geophysical research and technology to enhance understanding of the atmosphere of Earth, the other planets in the Solar System, and the cosmos. SSEC develops new observing tools for spacecraft, aircraft, and ground-based platforms, and models atmospheric phenomena. The Center receives, manages and distributes huge amounts of geophysical data and develops software to visualize and manipulate these data for use by researchers and operational meteorologists all over the world.[Taken from About SSEC at http://www.ssec.wisc.edu/overview/] A huge collection of data products, images, and animations comes to the SSEC from the University of Wisconsin Lidar Group. Contents of this collection include: An archive of thousands of Lidar images acquired before 2004 Arctic HSRL, MMCR, PAERI, MWR, Radiosonde, and CRAS forecast data Data after May 1, 2004 MPEG animations and Lidar Multiple Scattering Models

  3. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  4. The University of Wisconsin-Madison Torsatron/Stellarator Laboratory program, FY 1991--1993

    SciTech Connect (OSTI)

    Shohet, J.L.; Anderson, D.T.; Anderson, F.S.B.; Talmadge, J.N.

    1991-09-01

    This document summarizes results obtained during the first eight months of the current three year grant for research at the University of Wisconsin-Madison Torsatron/Stellarator Laboratory (TSL) and presents plans for future activity during fiscal years 1992 and 1993. Research efforts have focused on fundamental physics issues associated with toroidal confinement, predominantly through experimental investigations on the Interchangeable Module Stellarator (IMS). The program direction has been guided into studies of fluctuations, potentials and electric fields, plasma currents and flows, and effects of magnetic islands by a desire for increased relevance and impact on the general toroidal confinement program. Theoretical and computational activities are also being undertaken to support the experimental research and to identify interesting new toroidal confinement concepts which could contribute to the understanding of tokamak transport.

  5. Wisconsin Natural Gas Delivered to Commercial Consumers for the Account of

    Gasoline and Diesel Fuel Update (EIA)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Wisconsin Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 4,652 4,443 5,128 1990's 6,189 6,414 6,229 4,312 5,133 6,760 7,848 15,907 21,172 17,123 2000's 17,742 17,388 20,653 18,178 16,710 18,098 20,679 21,830 22,517 21,186 2010's 19,594 20,576 19,733 22,133

  6. Wisconsin Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Wisconsin Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 4.22 1990's 3.38 3.44 3.69 3.80 3.41 2.96 2.40 2.38 1.13 1.94 2000's 4.62 5.35 4.49 6.26 6.55 9.35 9.67 9.21 11.01 7.19 2010's 7.84 6.10 5.71 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date:

  7. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  8. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  9. ,"Wisconsin Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Annual",2015 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3045wi3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045wi3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:25:55 PM" "Back to

  10. ,"Wisconsin Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Monthly","12/2015" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3045wi3m.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045wi3m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:25:55 PM" "Back to

  11. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  12. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  13. Feasibility Study of Economics and Performance of Solar Photovoltaics at the Refuse Hideaway Landfill in Middleton, Wisconsin

    SciTech Connect (OSTI)

    Salasovich, J.; Mosey, G.

    2011-08-01

    This report presents the results of an assessment of the technical and economic feasibility of deploying a photovoltaics (PV) system on a brownfield site at the Refuse Hideaway Landfill in Middleton, Wisconsin. The site currently has a PV system in place and was assessed for further PV installations. The cost, performance, and site impacts of different PV options were estimated. The economics of the potential systems were analyzed using an electric rate of $0.1333/kWh and incentives offered by the State of Wisconsin and by the serving utility, Madison Gas and Electric. According to the site production calculations, the most cost-effective system in terms of return on investment is the thin-film fixed-tilt technology. The report recommends financing options that could assist in the implementation of such a system.

  14. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  15. Atmospheric Emitted Radiance Interferometer (AERI) Archived Data at the University of Wisconsin Space Science and Engineering Center (SSEC)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The AERI instrument is an advanced version of the high spectral resolution interferometer sounder (HIS) designed and fabricated at the University of Wisconsin (Revercomb et al. 1988) to measure upwelling infrared radiances from an aircraft. The AERI is a fully automated ground-based passive infrared interferometer that measures downwelling atmospheric radiance from 3.3 - 18.2 mm (550 - 3000 cm-1) at less than 10-minute temporal resolution with a spectral resolution of one wavenumber. It has been used in DOEÆs Atmospheric Radiation Measurement (ARM) program. Much of the data available here at the Cooperative Institute for Meteorological Satellite Studies (CIMSS), an institute within the University of Wisconsin’s Space Science and Engineering Center, may also be available in the ARM Archive. On this website, data and images from six different field experiments are available, along with AERIPLUS realtime data for the Madison, Wisconsin location. Realtime data includes temperature and water vapor time-height cross sections, SKEWT diagrams, convective stability indices, and displays from a rooftop Lidar instrument. The field experiments took place in Oaklahoma and Wisconsin with the AERI prototype.

  16. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  17. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  18. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  19. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  20. Community Energy Systems and the Law of Public Utilities. Volume Fifty-one. Wisconsin

    SciTech Connect (OSTI)

    Feurer, D.A.; Weaver, C.L.

    1981-01-01

    A detailed description is presented of the laws and programs of the State of Wisconsin governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

  1. Life Cycle Assessment of Switchgrass Cellulosic Ethanol Production in the Wisconsin and Michigan Agricultural Contexts

    SciTech Connect (OSTI)

    Sinistore, Julie C.; Reinemann, D. J.; Izaurralde, Roberto C.; Cronin, Keith R.; Meier, Paul J.; Runge, Troy M.; Zhang, Xuesong

    2015-04-25

    Spatial variability in yields and greenhouse gas emissions from soils has been identified as a key source of variability in life cycle assessments (LCAs) of agricultural products such as cellulosic ethanol. This study aims to conduct an LCA of cellulosic ethanol production from switchgrass in a way that captures this spatial variability and tests results for sensitivity to using spatially averaged results. The Environment Policy Integrated Climate (EPIC) model was used to calculate switchgrass yields, greenhouse gas (GHG) emissions, and nitrogen and phosphorus emissions from crop production in southern Wisconsin and Michigan at the watershed scale. These data were combined with cellulosic ethanol production data via ammonia fiber expansion and dilute acid pretreatment methods and region-specific electricity production data into an LCA model of eight ethanol production scenarios. Standard deviations from the spatial mean yields and soil emissions were used to test the sensitivity of net energy ratio, global warming potential intensity, and eutrophication and acidification potential metrics to spatial variability. Substantial variation in the eutrophication potential was also observed when nitrogen and phosphorus emissions from soils were varied. This work illustrates the need for spatially explicit agricultural production data in the LCA of biofuels and other agricultural products.

  2. University of Wisconsin Ion Beam Laboratory: A facility for irradiated materials and ion beam analysis

    SciTech Connect (OSTI)

    Field, K. G.; Wetteland, C. J.; Cao, G.; Maier, B. R.; Gerczak, T. J.; Kriewaldt, K.; Sridharan, K.; Allen, T. R.; Dickerson, C.; Field, C. R.

    2013-04-19

    The University of Wisconsin Ion Beam Laboratory (UW-IBL) has recently undergone significant infrastructure upgrades to facilitate graduate level research in irradiated materials phenomena and ion beam analysis. A National Electrostatics Corp. (NEC) Torodial Volume Ion Source (TORVIS), the keystone upgrade for the facility, can produce currents of hydrogen ions and helium ions up to {approx}200 {mu}A and {approx}5 {mu}A, respectively. Recent upgrades also include RBS analysis packages, end station developments for irradiation of relevant material systems, and the development of an in-house touch screen based graphical user interface for ion beam monitoring. Key research facilitated by these upgrades includes irradiation of nuclear fuels, studies of interfacial phenomena under irradiation, and clustering dynamics of irradiated oxide dispersion strengthened steels. The UW-IBL has also partnered with the Advanced Test Reactor National Scientific User Facility (ATR-NSUF) to provide access to the irradiation facilities housed at the UW-IBL as well as access to post irradiation facilities housed at the UW Characterization Laboratory for Irradiated Materials (CLIM) and other ATR-NSUF partner facilities. Partnering allows for rapid turnaround from proposed research to finalized results through the ATR-NSUF rapid turnaround proposal system. An overview of the UW-IBL including CLIM and relevant research is summarized.

  3. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  4. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  5. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  6. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  7. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  8. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  9. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  10. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  11. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  12. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  13. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  14. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  15. Oconomowoc Utilities | Open Energy Information

    Open Energy Info (EERE)

    Place: Wisconsin Phone Number: 262-569-2196 Website: www.oconomowoc-wi.govindex.as Twitter: @OconomowocWI Outage Hotline: 262-569-2196 or 262-567-4401 After Hours References:...

  16. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  17. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  18. Biodiesel Systems LLC | Open Energy Information

    Open Energy Info (EERE)

    Systems LLC Jump to: navigation, search Name: Biodiesel Systems, LLC Place: Madison, Wisconsin Zip: WI 53704 Product: The core business of Biodiesel Systems is plan, design,...

  19. SHOCK-ENHANCED C{sup +} EMISSION AND THE DETECTION OF H{sub 2...

    Office of Scientific and Technical Information (OSTI)

    Town, Private Bag X3, Rondebosch 7701 (South Africa) Universidad de Granada, Granada (Spain) University of Wisconsin-Barron County, Rice Lake, WI 54868 (United States) Iowa State...

  20. Slinger Utilities | Open Energy Information

    Open Energy Info (EERE)

    Slinger Utilities Jump to: navigation, search Name: Slinger Utilities Place: Wisconsin Phone Number: (262)644-5265 Website: www.vi.slinger.wi.govindex.as Outage Hotline: (262)...

  1. A Geometric Rendezvous-Based Domain Model

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University of Wisconsin - Madison 1500 Engineering Dr. Madison, WI 53716 sslattery@wisc.edu March 20, 2013 1 A Geometric Rendezvous-Based Domain Model for Data Transfer...

  2. L61 The Astrophysical Journal,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University of Wisconsin at Madison, 1150 University Avenue, Madison, WI 53706; jcperez@wisc.edu, boldyrev@wisc.edu Received 2007 October 4; accepted 2007 November 9; published...

  3. Sugar loss and enzyme inhibition due to oligosaccharide accumulation...

    Office of Scientific and Technical Information (OSTI)

    The methodology for large-scale separation of recalcitrant oligosaccharides from 25 % ... Publisher: BioMed Central Research Org: Wisconsin Alumni Research Foundation, Madison, WI ...

  4. paper250.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invited paper Algebraically Simple Chaotic Flows J. C. Sprott Department of Physics, University of Wisconsin, Madison, WI 53706 USA Stefan J. Linz Theoretische Physik I,...

  5. Biogas Direct LCC | Open Energy Information

    Open Energy Info (EERE)

    LCC Jump to: navigation, search Name: Biogas Direct LCC Place: Spring Green, Wisconsin Zip: WI 53588 Product: Biogas Direct is specialized in constructing Biogas plants for the...

  6. WI DOCUMENT RELEASE FORM

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Total Pages: 113 Key Words: 241 -1-203 tank, Auto-TCR, Tank Inventory Report, Best Basis Inventory All trademarks and registered trademarks are the property of their respective...

  7. Training Session: Madison, WI

    Broader source: Energy.gov [DOE]

    This 3.5-hour training provides builders with a comprehensive review of zero net-energy-ready home construction including the business case, detailed specifications, and opportunities to be...

  8. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  9. Molten Salts for High Temperature Reactors: University of Wisconsin Molten Salt Corrosion and Flow Loop Experiments -- Issues Identified and Path Forward

    SciTech Connect (OSTI)

    Piyush Sabharwall; Matt Ebner; Manohar Sohal; Phil Sharpe; Thermal Hydraulics Group

    2010-03-01

    Considerable amount of work is going on regarding the development of high temperature liquid salts technology to meet future process needs of Next Generation Nuclear Plant. This report identifies the important characteristics and concerns of high temperature molten salts (with lesson learned at University of Wisconsin-Madison, Molten Salt Program) and provides some possible recommendation for future work

  10. Better Buildings Neighborhood Program Peer Exchange Call: Program Sustainability Mastermind Session, featuring Host: Brian Driscoll, Wisconsin Energy Conservation Corporation Call Slides and Discussion Summary, November 15, 2012

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5, 2012 Better Buildings Neighborhood Program Peer Exchange Call: Program Sustainability Mastermind Session, featuring Host: Brian Driscoll, Wisconsin Energy Conservation Corporation Call Slides and Discussion Summary 1 Agenda * Welcome and Polls, Jonathan Cohen, DOE * Introductions (go-around), Tom Beierle, Ross Strategic * Mastermind Format and Agenda, Moderator: Dane Reese, Stark Talent Mastermind Session * Program Overview, Host: Brian Driscoll, WECC * Questions and Answers  Participants

  11. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  12. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  13. Evaluations of University of Wisconsin Silicon Carbide Temperature Monitors 300 LO and 400 LO B

    SciTech Connect (OSTI)

    K. L. Davis; J. L. Rempe; D. L. Knudson; B. M. Chase; T. C. Unruh

    2011-12-01

    Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part of the University of Wisconsin Pilot Project with a target dose of 3 dpa. Temperature monitors were fabricated from high density (3.203 g/cm3) SiC manufactured by Rohm Haas with a nominal size of 12.5 mm x 1.0 mm x 0.75 mm (see Attachment A). Table 1 provides identification for each monitor with an expected peak irradiation temperature range based on preliminary thermal analysis (see Attachment B). Post irradiation calculations are planned to reduce uncertainties in these calculated temperatures. Since the early 1960s, SiC has been used as a post-irradiation temperature monitor. As noted in Reference 2, several researchers have observed that neutron irradiation induced lattice expansion of SiC annealed out when the post-irradiation annealing temperature exceeds the peak irradiation temperature. As noted in Reference 3, INL uses resistivity measurements to infer peak irradiation temperature from SiC monitors. Figure 1 depicts the equipment at the HTTL used to evaluate the SiC monitors. The SiC monitors are heated in the annealing furnace using isochronal temperature steps that, depending on customer needs, can range from 50 to 800 C. This furnace is located under a ventilation hood within the stainless steel enclosure. The ventilation system is activated during heating so that any released vapors are vented through this system. Annealing temperatures are recorded using a National Institute of Standards and Technology (NIST) traceable thermocouple inserted into an alumina tube in the furnace. After each isochronal annealing, the specimens are placed in a specialized fixture located in the constant temperature chamber (maintained at 30 C) for a minimum of 30 minutes. After the 30 minute wait time, each specimen's resistance is measured using the specialized fixture and a calibrated DC power analyzer. This report discusses the evaluation of the SiC monitors and presents the results. Testing was conducted in accordance with Reference 3. Sections 2 and 3 present the data collected for each monitor and provide interpretation of the data. Section 4 presents the evaluated temperature results.

  14. EA-1850: Flambeau River BioFuels, Inc. Proposed Wood Biomass-to-Liquid Fuel Biorefinery, Park Falls, Wisconsin

    Broader source: Energy.gov [DOE]

    NOTE: This EA has been cancelled. This EA will evaluate the environmental impacts of a proposal to provide federal funding to Flambeau River Biofuels (FRB) to construct and operate a biomass-to-liquid biorefinery in Park Falls, Wisconsin, on property currently used by Flambeau Rivers Paper, LLC (FRP) for a pulp and paper mill and Johnson Timber Corporation's (JTC) Summit Lake Yard for timber storage. This project would design a biorefinery which would produce up to 1,150 barrels per day (bpd) of clean syncrude. The biorefinery would also supply steam to the FRP mill, meeting the majority of the mill's steam demand and reducing or eliminating the need for the existing biomass/coal-fired boiler. The biorefinery would also include a steam turbine generator that will produce "green" electrical power for use by the biorefinery or for sale to the electric utility.

  15. The University of Wisconsin-Madison Torsatron/Stellarator Laboratory program, FY 1991--1993. Annual progress report

    SciTech Connect (OSTI)

    Shohet, J.L.; Anderson, D.T.; Anderson, F.S.B.; Talmadge, J.N.

    1991-09-01

    This document summarizes results obtained during the first eight months of the current three year grant for research at the University of Wisconsin-Madison Torsatron/Stellarator Laboratory (TSL) and presents plans for future activity during fiscal years 1992 and 1993. Research efforts have focused on fundamental physics issues associated with toroidal confinement, predominantly through experimental investigations on the Interchangeable Module Stellarator (IMS). The program direction has been guided into studies of fluctuations, potentials and electric fields, plasma currents and flows, and effects of magnetic islands by a desire for increased relevance and impact on the general toroidal confinement program. Theoretical and computational activities are also being undertaken to support the experimental research and to identify interesting new toroidal confinement concepts which could contribute to the understanding of tokamak transport.

  16. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  17. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  18. GA-AL-SC | Department of Energy

    Energy Savers [EERE]

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  19. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  3. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  4. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  5. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  6. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  7. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  8. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  9. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  10. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  11. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  12. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  13. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum...

    Office of Scientific and Technical Information (OSTI)

    Room-temperature mid-infrared "M"-type GaAsSbInGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb...

  14. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  15. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  16. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  17. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  18. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  19. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  20. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  1. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  2. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  3. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  4. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  5. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  6. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  7. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  8. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  9. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Hfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  10. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  11. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  12. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  13. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  14. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  15. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  16. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  17. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  18. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  19. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  20. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  1. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  2. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  3. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  4. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  5. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  6. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  7. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  8. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  9. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  10. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  11. General Atomics (GA) Fusion News: A New Spin on Understanding Plasma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confinement | Princeton Plasma Physics Lab General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement

  12. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  13. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  14. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  15. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  16. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  17. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  18. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  19. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  20. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  1. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  2. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  3. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  4. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  5. Wisconsin Natural Gas Summary

    U.S. Energy Information Administration (EIA) Indexed Site

    68 5.95 5.61 4.25 4.21 3.96 1989-2015 Residential 13.27 14.05 12.80 8.42 7.89 7.38 1989-2015 Commercial 6.42 6.44 6.18 5.37 6.34 6.12 1989-2015 Industrial 4.54 4.91 4.56 4.69 5.37 5.43 2001-2015 Electric Power W W W W W W 2002-2015 Consumption (Million Cubic Feet) Delivered to Consumers 25,107 23,388 23,582 29,272 38,845 49,528 2001-2015 Residential 2,475 2,308 2,498 6,080 11,070 16,428 1989-2015 Commercial 2,782 2,964 2,867 4,985 7,776 10,352 1989-2015 Industrial 8,824 9,124 9,103 10,742 12,289

  6. ,"Wisconsin Natural Gas Prices"

    U.S. Energy Information Administration (EIA) Indexed Site

    Date:","3312016" ,"Excel File Name:","ngprisumdcuswim.xls" ,"Available from Web Page:","http:www.eia.govdnavngngprisumdcuswim.htm" ,"Source:","Energy ...

  7. Wisconsin Natural Gas Prices

    U.S. Energy Information Administration (EIA) Indexed Site

    68 5.95 5.61 4.25 4.21 3.96 1989-2015 Residential Price 13.27 14.05 12.80 8.42 7.89 7.38 1989-2015 Percentage of Total Residential Deliveries included in Prices 100.0 100.0 100.0 100.0 100.0 100.0 2002-2015 Commercial Price 6.42 6.44 6.18 5.37 6.34 6.12 1989-2015 Percentage of Total Commercial Deliveries included in Prices 54.8 57.2 58.1 69.4 75.1 77.7 1989-2015 Industrial Price 4.54 4.91 4.56 4.69 5.37 5.43 2001-2015 Percentage of Total Industrial Deliveries included in Prices 11.5 11.1 12.6

  8. Wisconsin Natural Gas Summary

    U.S. Energy Information Administration (EIA) Indexed Site

    Pipeline and Distribution Use 1967-2005 Citygate 6.14 5.65 4.88 4.88 6.96 4.71 1984-2015 Residential 10.34 9.77 9.27 8.65 10.52 NA 1967-2015 Commercial 8.53 8.03 7.34 6.94 8.74 NA 1967-2015 Industrial 7.56 7.05 5.81 6.02 8.08 NA 1997-2015 Vehicle Fuel 7.84 6.10 5.71 1989-2012 Electric Power 5.43 4.91 3.27 4.47 5.47 W 1997-2015 Underground Storage (Million Cubic Feet) Injections 1973-1973 Withdrawals 1974-1975 Net Withdrawals 1973-1975 Liquefied Natural Gas Storage (Million Cubic Feet) Additions

  9. Wisconsin Nuclear Profile - Kewaunee

    U.S. Energy Information Administration (EIA) Indexed Site

    Kewaunee" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer cpacity factor (percent)","Type","Commercial operation date","License expiration date" 1,566,"4,990",100.6,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" ,566,"4,990",100.6 "Data for 2010" "PWR = Pressurized Light

  10. Wisconsin Natural Gas Prices

    U.S. Energy Information Administration (EIA) Indexed Site

    Pipeline and Distribution Use Price 1967-2005 Citygate Price 6.14 5.65 4.88 4.88 6.96 4.71 1984-2015 Residential Price 10.34 9.77 9.27 8.65 10.52 NA 1967-2015 Percentage of Total Residential Deliveries included in Prices 100.0 100.0 100.0 100.0 100.0 100.0 1989-2015 Commercial Price 8.53 8.03 7.34 6.94 8.74 NA 1967-2015 Percentage of Total Commercial Deliveries included in Prices 76.2 76.4 74.4 77.7 77.0 NA 1990-2015 Industrial Price 7.56 7.05 5.81 6.02 8.08 NA 1997-2015 Percentage of Total

  11. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  12. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  13. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  14. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  15. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  16. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  17. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  18. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  19. RiverHeath Appleton, WI

    Broader source: Energy.gov [DOE]

    The goal of the project is to produce a closed loop neighborhood-wide geothermal exchange system using the river as the source of heat exchange.

  20. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  1. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  2. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  3. Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flemish, Lumileds joe.flemish@philips.com Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture 2015 Building Technologies Office Peer Review 2 Project Summary Timeline: Start date: August 1, 2013 Planned end date: July 31, 2015 Key Milestones: 1. Repeatable demonstration of PSS emitter performance within 1.5% of the TFFC counterpart; - met January 2014 2. Demonstration of PSS emitter performance exceeding TFFC counterpart by 2%:

  4. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  5. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  6. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  7. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  8. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  9. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  10. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  11. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  12. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  13. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  14. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  15. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  16. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  17. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  18. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  19. GA Hot Cell D&D Closeout Report

    Office of Legacy Management (LM)

    GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics

  20. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  1. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  2. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  3. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  4. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.626.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  5. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  6. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  7. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  8. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  9. d:\\

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Padova, Italy 2 Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA 3 Istituto Nazionale di Fisica della Materia, Unit a di Padova, Italy Received 14 ...

  10. CX-000161: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    WI City MadisonCX(s) Applied: A9, A11, B2.5, B5.1Date: 10/19/2009Location(s): Madison, WisconsinOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  11. Bloomer Electric & Water Co | Open Energy Information

    Open Energy Info (EERE)

    Bloomer Electric & Water Co Jump to: navigation, search Name: Bloomer Electric & Water Co Place: Wisconsin Phone Number: 715-568-3331 Website: www.ci.bloomer.wi.usutilities Outage...

  12. National Trust for Historic Preservation: America Saves! Energizing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Center of Wisconsin - Madison, WI - EnerPath - Rochester, NY - Ecology Action - Santa Cruz, CA - Community Power Works - Seattle, WA DOE Total Funding: 1,600,000 Cost...

  13. Using RSI format

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University of Wisconsin-Madison, Madison, WI 53706; electronic mail: djdenhar@facstaff.wisc.edu FIG. 1. Side view of the ZaP device and two viewing telescopes in sche- matic form....

  14. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Wisconsin - Madison, 1225 W. Dayton St., Madison, WI, 53706. Email: dturner@ssec.wisc.edu. References Clough, S.A., M.W. Shephard, E.J. Mlawer, J.S. Delamere, M.J. Iacono,...

  15. International Conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University of Wisconsin - Madison 1500 Engineering Dr., Madison, WI 53706 sslattery@wisc.edu; wilsonp@engr.wisc.edu R.P. Pawlowski Sandia National Laboratories P.O. Box...

  16. untitled

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    N. Stupishin 2 , J. Waksman 1 1 University of Wisconsin, Madison WI 53706 USA; jkanders@wisc.edu 2 Budker Institute of Nuclear Physics, Prospekt Lavrent'eva 11, Novosibirsk 630090,...

  17. This content has been downloaded from IOPscience. Please scroll...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Plasmas, University of Wisconsin-Madison, Madison, WI 53706, U.S.A. E-mail: wcyoung2@wisc.edu ABSTRACT: A new, high-repetition-rate pulse-burst laser system for the MST Thomson...

  18. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Wisconsin - Madison 1225 W. Dayton St. Madison, WI 53706 email: dturner@ssec.wisc.edu Reference Turner, DD. 2005. "Arctic mixed-phase cloud properties from AERI-lidar...

  19. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Wisconsin-Madison, 1225 West Dayton Street, Madison, WI 53706; E-mail: lesliem@ssec.wisc.edu References IPCC 2001: Climate Change. 2001. The Scientific Basis. Contribution of...

  20. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  1. Multiscale twin hierarchy in NiMnGa shape memory alloys with...

    Office of Scientific and Technical Information (OSTI)

    Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu Citation Details In-Document Search Title: Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe ...

  2. Surface Chemistry of GaP(001) and InP(001) in Contact with Water...

    Office of Scientific and Technical Information (OSTI)

    Surface Chemistry of GaP(001) and InP(001) in Contact with Water Citation Details In-Document Search Title: Surface Chemistry of GaP(001) and InP(001) in Contact with Water You...

  3. ScGaN alloy growth by molecular beam epitaxy: Evidence for a...

    Office of Scientific and Technical Information (OSTI)

    ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Citation Details In-Document Search Title: ScGaN alloy growth by molecular beam...

  4. Improved InGaN LED System Efficacy and Cost via Droop Reduction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improved InGaN LED System Efficacy and Cost via Droop Reduction Improved InGaN LED System Efficacy and Cost via Droop Reduction Lead Performer: Lumileds, LLC - San Jose, CA DOE ...

  5. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  6. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  7. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  8. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Office of Environmental Management (EM)

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  9. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  10. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  11. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  12. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  13. Ground-water geochemistry and radionuclide activity in the Cambrian-Ordovician aquifer of Dodge and Fond du Lac counties, Wisconsin. Technical report

    SciTech Connect (OSTI)

    Weaver, T.R.; Bahr, J.M.; Anderson, M.P.

    1990-01-01

    Analyses of groundwater from wells in the Cambrian-Ordovician aquifer of eastern Wisconsin indicate that regions of the aquifer contain elevated concentrations of dissolved solids, chloride and sulfate. Groundwater from several wells in the area also approach or exceed the current drinking water standard for combined radium activity. Significant changes in groundwater chemistry occur where the aquifer becomes confined by the Maquoketa shale. Concentrations of Cl(-), SO4(2-) and Na(+) increase in the confined region, and the highest combined radium activities are typically observed in the area. Geochemical modeling implies that the observed changes in major ion groundwater chemistry occur in response to the presence of the confining unit which may act as a source of SO4(2-), through gypsum dissolution, and Na(+), through cation exchange. A finite difference groundwater flow model was linked to a particle tracking routine to determine groundwater flow paths and residence times in the aquifer near the boundary between unconfined and confined conditions. Results suggest that the presence of the confining unit produces a vertically stratified flow regime in the confined region.

  14. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  15. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New Normally-Off device architectures were demonstrated for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8/200 mm Si starting substrates.

  16. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  17. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  18. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN

    Office of Scientific and Technical Information (OSTI)

    nanostructure arrays on GaN/sapphire template (Journal Article) | SciTech Connect Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Citation Details In-Document Search Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Authors: Sundaram, S. [1] ; Puybaret, R. [2] ; El Gmili, Y. [1] ; Li, X. [2] ; Bonanno, P. L. [1] ; Pantzas, K. [3] Search SciTech

  19. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  20. ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub

    Office of Scientific and Technical Information (OSTI)

    x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect (Journal Article) | SciTech Connect ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect Citation Details In-Document Search Title: ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect This paper presents a study of the