Sample records for wi wisconsin ga

  1. Department of Population Health Sciences, University of Wisconsin-Madison 610 Walnut Street, 707 WARF, Madison, WI 53726-2397

    E-Print Network [OSTI]

    Scharer, John E.

    Department of Population Health Sciences, University of Wisconsin-Madison 610 Walnut Street, 707://www.pophealth.wisc.edu UNIVERSITY OF WISCONSIN-MADISON SCHOOL OF MEDICINE AND PUBLIC HEALTH The Philip M. Farrell Population Health Distinguished Alumni Lecture Ann P. O'Rourke, MD, MPH Assistant Professor Surgical Critical Care Director

  2. Long-Term Wisconsin Capital Assets Deferral and Wisconsin-Source Asset Exclusion Qualified Wisconsin Business Certification (Wisconsin)

    Broader source: Energy.gov [DOE]

    WEDC may certify businesses as a “Qualified Wisconsin Business”. The designation allows investors with WI capital gains tax liability to both defer that tax liability and if an investment is...

  3. Department of Spanish and Portuguese University of Wisconsin--Madison 1018 Van Hise Hall -1220 Linden Drive Madison, WI 53706-1557

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Department of Spanish and Portuguese University of Wisconsin--Madison 1018 Van Hise Hall - 1220 the Chair Rethinking the mission of the Department Like many departments of Spanish and Portuguese, cultural and linguistic dimensions Spanish has achieved in this country in the last thirty years

  4. RES Wisconsin

    Office of Energy Efficiency and Renewable Energy (EERE)

    The National Center for American Indian Enterprise Development (The National Center) is proud to announce RES Wisconsin, which will be held October 6th – 9th, 2014 at the Potawatomi Hotel & Casino in Milwaukee, Wisconsin.

  5. Wisconsin | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Wisconsin Wisconsin Wisconsin Energy Efficiency (WE2) Milwaukee Energy Efficiency (Me2) Green Madison City of Racine Location: Milwaukee, Madison, and Racine, Wisconsin Seed...

  6. Status of Wisconsin Agriculture, 2012 An annual report by the Department of Agricultural and

    E-Print Network [OSTI]

    Radeloff, Volker C.

    Status of Wisconsin Agriculture, 2012 An annual report by the Department of AgriculturalSconSin agriculture 2012 i #12;ii StatuS of WiSconSin agriculture 2012 #12;Preface Status of Wisconsin Agriculture is an annual agricultural situation and outlook report authored (except where noted) by faculty

  7. Status of Wisconsin Agriculture, 2013 An annual report by the Department of Agricultural and Applied

    E-Print Network [OSTI]

    Williams, Justin

    of agricultural and applied economics, university of Wisconsin-Madison. Because of the large and complex effects of the 2012 drought on Wisconsin agriculture, we begin this issue with a summary of the nature and impactsSconSin agriculture 2013 #12;StatuS of WiSconSin agriculture 2013--executiVe SuMMary iii Drought, high temperatures

  8. Soil maps of Wisconsin Alfred E. Hartemink a,

    E-Print Network [OSTI]

    Mladenoff, David

    Soil maps of Wisconsin Alfred E. Hartemink a, , Birl Lowery a , Carl Wacker b a University of Wisconsin-Madison, Department of Soil Science, FD Hole Soils Lab, 1525 Observatory Drive, Madison, WI 53706 May 2012 Accepted 15 May 2012 Available online xxxx Keywords: Soil maps Historical maps Digital soil

  9. DEPARTMENT OF STATISTICS University of Wisconsin

    E-Print Network [OSTI]

    Chung, Moo K.

    approach. The theoretical construction and the numerical implementation issues are explainedDEPARTMENT OF STATISTICS University of Wisconsin 1300 University Ave. Madison, WI 53706 TECHNICAL-SPHARM generalizes the classical-SPHARM with an additional parameter that modulates the high frequency content

  10. WI Biodiesel Blending Progream Final Report

    SciTech Connect (OSTI)

    Redmond, Maria E; Levy, Megan M

    2013-04-01T23:59:59.000Z

    The Wisconsin State Energy Office�¢����s (SEO) primary mission is to implement cost�¢���effective, reliable, balanced, and environmentally�¢���friendly clean energy projects. To support this mission the Wisconsin Biodiesel Blending Program was created to financially support the installation infrastructure necessary to directly sustain biodiesel blending and distribution at petroleum terminal facilities throughout Wisconsin. The SEO secured a federal directed award of $600,000 over 2.25 years. With these funds, the SEO supported the construction of inline biodiesel blending facilities at two petroleum terminals in Wisconsin. The Federal funding provided through the state provided a little less than half of the necessary investment to construct the terminals, with the balance put forth by the partners. Wisconsin is now home to two new biodiesel blending terminals. Fusion Renewables on Jones Island (in the City of Milwaukee) will offer a B100 blend to both bulk and retail customers. CITGO is currently providing a B5 blend to all customers at their Granville, WI terminal north of the City of Milwaukee.

  11. Wisconsin Agriculture SPECIAL ARTICLE

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF Wisconsin Agriculture 2009 · SPECIAL ARTICLE: Bioenergy and Agriculture in Wisconsin Economy Department of Agricultural and Applied Economics College of Agricultural and Life Sciences of Wisconsin Agriculture, 2009 An annual report by the University of Wisconsin-Madison Department

  12. A Study of the Effect of Using Electrodynamic Wheels in University of Wisconsin-Madison

    E-Print Network [OSTI]

    Lipo, Thomas

    -Madison College of Engineering Wisconsin Power Electronics Research Center 2559D Engineering Hall 1415 Engineering. & Comp. Engr. University of Wisconsin-Madison 1415 Engineering Drive Madison, WI 53706 #12;A STUDY permanent magnet Halbach array above a conducting, non-magnetic, track generates a travelling time

  13. Department of Spanish and Portuguese University of Wisconsin-Madison

    E-Print Network [OSTI]

    Scharer, John E.

    Department of Spanish and Portuguese University of Wisconsin-Madison 1018 Van Hise Hall 1220 Linden Drive Madison, WI 53706 Tel: 608-262-2093 h p://spanport.lss.wisc.edu SPANISH Why Study Spanish? The Spanish-speaking popula on of the United States is the country's largest growing minority. It is forecast

  14. UNIVERSITY HEALTH SERVICES UNIVERSITY OF WISCONSIN-MADISON

    E-Print Network [OSTI]

    Scharer, John E.

    are pre-paid by the Student Health Fee. I understand that I will be informed if a health care providerUNIVERSITY HEALTH SERVICES UNIVERSITY OF WISCONSIN-MADISON 333 East Campus Mall Madison, WI 53715-1381 http://www.uhs.wisc.edu MR# Name BD Gender ID# Date University Health Services (UHS) Information

  15. Forestry Policies (Wisconsin)

    Broader source: Energy.gov [DOE]

    The State of Wisconsin has nearly 16 million acres of forested lands in the state. The Statewide Forest Plan, completed in 2004, is carried out by the Wisconsin Council on Forestry together with...

  16. Jobs Tax Credit (Wisconsin)

    Broader source: Energy.gov [DOE]

    Businesses relocating to Wisconsin or expanding in Wisconsin that are creating full-time employment may be eligible for The Jobs Tax Credit . Jobs created as a result of the tax credit must be...

  17. Wisconsin Agriculture Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF Wisconsin Agriculture 2011 · Status of the Wisconsin Farm Economy · Current Outlook: Farm of Agricultural and Applied Economics College of Agricultural and Life Sciences University of Wisconsin-Madison Cooperative Extension University of Wisconsin-Extension #12;Status of Wisconsin Agriculture, 2011 An annual

  18. Wisconsin Agriculture Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF Wisconsin Agriculture 2010 · Status of the Wisconsin Farm Economy · Current Outlook: Farm Products, Farm Inputs and the General Economy · Framing the Financial Crisis for Wisconsin Agriculture Farm Economy . . . . . . 1 II. Current Outlook . . . . . . . . . . . . . . . . . . . . . . . . 7

  19. Wisconsin Small Business Guarantee Program (Wisconsin)

    Broader source: Energy.gov [DOE]

    The Wisconsin Small Business Guarantee Program offers low-interest financing to small businesses for fixed assets, working capital, or inventory purchase. The loan guarantee maximum is 50 percent...

  20. Climate Action Plan (Wisconsin)

    Broader source: Energy.gov [DOE]

    In April 2007, Governor Doyle signed Executive Order 191 which brought together a prominent and diverse group of key Wisconsin business, industry, government, energy and environmental leaders to...

  1. Bioenergy Impact on Wisconsin's Workforce

    Broader source: Energy.gov [DOE]

    Troy Runge, Wisconsin Bioenergy Initiative, presents on bioenergy's impact on Wisconsin's workforce development for the Biomass/Clean Cities States webinar.

  2. Nonprofit Organization Madison, Wisconsin

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    improving education for primary care physicians who play a key role in pain management, and that all health Preparation, & for Primary Care Physicians & Other Health Care Providers August 18-22, 2014 · Madison, WI

  3. AGRICULTURE, 2001 Current Wisconsin Farm Financial Conditions

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2001 Current Wisconsin Farm Financial Conditions Situation and Outlook for Farm Products and Inputs Special Articles · Outlook for the National Economy and Agricultural Policies · Smart Growth and Wisconsin Agriculture · The Wisconsin Agricultural Economy: A Broader

  4. Helping Wisconsin Small Businesses Increase Sustainability

    Broader source: Energy.gov [DOE]

    Almost 100 Wisconsin small- and medium-sized businesses have been helped thanks to the Wisconsin Profitable Sustainability Initiative.

  5. See through walls with Wi-Fi

    E-Print Network [OSTI]

    Adib, Fadel

    2013-01-01T23:59:59.000Z

    Wi-Fi signals are typically information carriers between a transmitter and a receiver. In this thesis, we show that Wi-Fi can also extend our senses, enabling us to see moving objects through walls and behind closed doors. ...

  6. See through walls with WiFi!

    E-Print Network [OSTI]

    Adib, Fadel M.

    2013-01-01T23:59:59.000Z

    Wi-Fi signals are typically information carriers between a transmitter and a receiver. In this paper, we show that Wi-Fi can also extend our senses, enabling us to see moving objects through walls and behind closed doors. ...

  7. Wisconsin: Wisconsin's Clean Energy Resources and Economy (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2013-03-01T23:59:59.000Z

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Wisconsin.

  8. AGRICULTURE, 2003 Current Wisconsin Farm Financial Conditions

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2003 Current Wisconsin Farm Financial Conditions Situation and Challenges Department of Agricultural and Applied Economics College of Agricultural and Life Sciences OF WISCONSIN AGRICULTURE, 2003 An Annual Report by: Department of Agricultural and Applied Economics College

  9. WI Windinvest | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDITCalifornia Sector:ShreniksourceVentowerVigor RenewablesEnergyWE2WI

  10. US ENC WI Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14TotalThe Outlook269,023Year69,023US Virgin120 US ENC WI

  11. Storm Water Discharge Permits (Wisconsin)

    Broader source: Energy.gov [DOE]

    Wisconsin's storm water runoff regulations include permitting requirements for construction sites and industrial facilities, including those processing or extracting coal or gas. The purpose of the...

  12. Wisconsin Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear...

  13. Wisconsin Poverty 101 Who is poor in Wisconsin?

    E-Print Network [OSTI]

    Sheridan, Jennifer

    at or below the 2010 state poverty rate of 10.3% under the Wisconsin Poverty Measure. Source: IRP tabulations estimated with the Wisconsin Poverty Measure and the official poverty measure. Source: IRP tabulations using 2010 American Community Survey data. ASHLAND BAYFIELD GRANT LAFAYETTE IOWA GREEN ROCK WALWORTH KENOSHA

  14. Part of the Wisconsin Poverty Project's Fourth Annual Report Series Wisconsin Poverty Report

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Part of the Wisconsin Poverty Project's Fourth Annual Report Series Wisconsin Poverty Report, and Katherine A. Thornton Institute for Research on Poverty University of Wisconsin­Madison May 2012 #12;ABOUT THE WISCONSIN POVERTY PROJECT The Wisconsin Poverty Project came into being in late 2008, when a group

  15. AGRICULTURE, 2002 Current Wisconsin Farm Financial Conditions

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2002 Current Wisconsin Farm Financial Conditions Situation of the Wisconsin Cranberry Industry Department of Agricultural and Applied Economics College of Agricultural-Extension #12;STATUS OF WISCONSIN AGRICULTURE, 2002 An Annual Report by: Department of Agricultural and Applied

  16. SECURING WiMAX WIRELESS COMMUNICATIONS Shirley Radack, Editor

    E-Print Network [OSTI]

    and Matthew Sexton (of Booz Allen Hamilton), this publication provides information to organizations about Wi

  17. Wisconsin SRF Electron Gun Commissioning

    SciTech Connect (OSTI)

    Bisognano, Joseph J. [University of Wisconsin-Madison; Bissen, M. [University of Wisconsin-Madison; Bosch, R. [University of Wisconsin-Madison; Efremov, M. [University of Wisconsin-Madison; Eisert, D. [University of Wisconsin-Madison; Fisher, M. [University of Wisconsin-Madison; Green, M. [University of Wisconsin-Madison; Jacobs, K. [University of Wisconsin-Madison; Keil, R. [University of Wisconsin-Madison; Kleman, K. [University of Wisconsin-Madison; Rogers, G. [University of Wisconsin-Madison; Severson, M. [University of Wisconsin-Madison; Yavuz, D. D. [University of Wisconsin-Madison; Legg, Robert A. [JLAB; Bachimanchi, Ramakrishna [JLAB; Hovater, J. Curtis [JLAB; Plawski, Tomasz [JLAB; Powers, Thomas J. [JLAB

    2013-12-01T23:59:59.000Z

    The University of Wisconsin has completed fabrication and commissioning of a low frequency (199.6 MHz) superconducting electron gun based on a quarter wave resonator (QWR) cavity. Its concept was optimized to be the source for a CW free electron laser facility. The gun design includes active tuning and a high temperature superconducting solenoid. We will report on the status of the Wisconsin SRF electron gun program, including commissioning experience and first beam measurements.

  18. Mastermind Session: Wisconsin Energy Conservation Corporation...

    Energy Savers [EERE]

    Corporation Better Buildings Neighborhood Program Peer Exchange Call: Program Sustainability Mastermind Session, featuring host Brian Driscoll, Wisconsin Energy Conservation...

  19. Wisconsin Rapids, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation, searchRapids, Wisconsin:

  20. SEA LAMPREY SPAWNING: Wisconsin and Minnesota Streams

    E-Print Network [OSTI]

    Examination of streams on Grand Island 3 Examination of streams in Wisconsin 3 Iron Counb7 3 Ashland County 3 5 3. Shoreline of Ashland County, Wisconsin 7 U* Shoreline of Cook County, Minnesota 12 5* Shoreline in Wisconsin (Iron, Ashland, and Bayfield Counties) were surveyed. In addition, all of the streams on Grand

  1. DOE - Office of Legacy Management -- Besley-Wells - Wisconsin - WI 03

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTable ofArizonaBuffalo - NY 63Hill -Besley-Wells -

  2. Grande Wi-Fi : understanding what Wi-Fi users are doing in coffee-shops

    E-Print Network [OSTI]

    Gupta, Neeti

    2004-01-01T23:59:59.000Z

    The relationship between coffee-shops and Internet has recently been highlighted by the launch of wireless "hotspots" which provides e-access through Wi-Fi technology, in coffee-shops and several other public places in ...

  3. AGRICULTURE, 2006 Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2006 Status of the Wisconsin Farm Economy Situation and Outlook-Added Agriculture · Organic Farming in Wisconsin · A New Wisconsin Cooperative Law Department of Agricultural and Applied Economics College of Agricultural and Life Sciences University of Wisconsin-Madison Cooperative

  4. AGRICULTURE, 2008 Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2008 Status of the Wisconsin Farm Economy Situation and Outlook of Working Lands in Wisconsin · Hired Labor on Wisconsin Dairy Farms Department of Agricultural and Applied Economics College of Agricultural and Life Sciences University of Wisconsin-Madison Cooperative Extension

  5. AGRICULTURE, 2005 Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2005 Status of the Wisconsin Farm Economy Situation and Outlook: Farm Products, Farm Inputs and the General Economy Special Articles · Expansion, Modernization..............................................................................................................................v I. Status of the Wisconsin Farm Economy

  6. ENVIRONMENTAL CHEMISTRY AND TECHNOLOGY PROGRAM University of Wisconsin-Madison

    E-Print Network [OSTI]

    Sprott, Julien Clinton

    ­ Material damage · Ecosystem Impacts ­ Nutrients ­ Toxics · Climate Change #12;ENVIRONMENTAL CHEMISTRYENVIRONMENTAL CHEMISTRY AND TECHNOLOGY PROGRAM University of Wisconsin-Madison Optimizing University of Wisconsin-Madison #12;ENVIRONMENTAL CHEMISTRY AND TECHNOLOGY PROGRAM University of Wisconsin

  7. Executive Summary The University of Wisconsin Orthopedic Funds are part of the University of Wisconsin

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Executive Summary The University of Wisconsin Orthopedic Funds are part of the University, and rehabilitation of musculoskeletal injuries and conditions. Vision The University of Wisconsin Orthopedic Funds possible care for patients. Strategic Priorities The University of Wisconsin Orthopedic Funds will support

  8. The Fifth Annual Report of the Wisconsin Poverty Project Wisconsin Poverty Report

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    The Fifth Annual Report of the Wisconsin Poverty Project Wisconsin Poverty Report: Is the Safety Net Still Protecting Families from Poverty in 2011? Timothy M. Smeeding, Julia B. Isaacs, and Katherine A. Thornton Institute for Research on Poverty University of Wisconsin­Madison June 2013 #12;ABOUT

  9. The Fourth Annual Report of the Wisconsin Poverty Project Wisconsin Poverty Report

    E-Print Network [OSTI]

    Sheridan, Jennifer

    The Fourth Annual Report of the Wisconsin Poverty Project Wisconsin Poverty Report: How the Safety Net Protected Families from Poverty in 2010 Yiyoon Chung, Julia B. Isaacs, Timothy M. Smeeding, and Katherine A. Thornton Institute for Research on Poverty University of Wisconsin­Madison April 2012 #12;ABOUT

  10. Alternative Fuels Data Center: Wisconsin Information

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Wisconsin's Incentives and Laws, including the latest ones listed below. Sustainable Biofuels Production Practices Renewable Fuel Sales Volume Goals Alternative Fueling...

  11. Water Conservation and Water Use Efficiency (Wisconsin)

    Broader source: Energy.gov [DOE]

    Wisconsin has several statutes that promote water conservation and controlled water use, and this legislation establishes mandatory and voluntary programs in water conservation and water use...

  12. Wisconsin Business Sheds Light on Lighting

    Broader source: Energy.gov [DOE]

    Wisconsin-based Energy Performance Specialists LLC is helping clients reduce energy consumption in a very simple way?by just using less.

  13. Wisconsin Summary of Reported Data | Department of Energy

    Energy Savers [EERE]

    partner Wisconsin. Wisconsin Summary of Reported Data More Documents & Publications Virginia -- SEP Summary of Reported Data Michigan -- SEP Summary of Reported Data Alabama...

  14. Cutting Wi-Fi Scan Tax for Smart Devices Computer Science Department

    E-Print Network [OSTI]

    always-on Wi- Fi connectivity (e.g., Skype, Viber, Wi-Fi Finder). The Wi-Fi power drain resulting from); allowing scan to be offloaded to the Wi-Fi radio. We design WiScan, a complete system to realize scan offloading, and implement our system on the Nexus 5. Both our prototype experiments and trace

  15. Wisconsin Dells, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation, search Equivalent URI

  16. Evansville WI (WWTP) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489 NoEurope BV Jump to: navigation, search Name:Evansville WI (WWTP)

  17. Device Association Through Passive Wi-Fi Monitoring

    E-Print Network [OSTI]

    Taghavi, Travis

    2013-09-28T23:59:59.000Z

    DEVICE ASSOCIATION THROUGH PASSIVE WI-FI MONITORING An Undergraduate Research Scholars Thesis by TRAVIS TAGHAVI Submitted to Honors and Undergraduate Research Texas A&M University in partial fulfillment of the requirements for the designation............................................................................................................................................... 14 REFERENCES....................................................................................................................................... 16 ABSTRACT Device Association Through Passive Wi-Fi Monitoring. (May 2014) Travis Taghavi Department...

  18. Gauging Employment Growth in Wisconsin: State-By-State Comparisons

    E-Print Network [OSTI]

    Saldin, Dilano

    Gauging Employment Growth in Wisconsin: State; 2 Employment growth in Wisconsin continues to lag both the national rate of job growth as well as the rates of employment increase in most other states

  19. Adapting to Climate Change in Wisconsin Strategies for Conservation Professionals

    E-Print Network [OSTI]

    Sheridan, Jennifer

    -SARP, Wisconsin Sea Grant, UW-Extension and UW-Madison College of Engineering #12;Wisconsin Initiative on Climate · Wisconsin's changing climate · Expected impacts · Adaptation strategies #12;Visible Light Energy in = Energy out Absorbed by ozone Absorbed by the earth Greenhouse effect UV radiation Solar radiation Reflected

  20. AGRICULTURE, 2004 Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2004 Status of the Wisconsin Farm Economy Situation and Outlook Situation: Implications for U.S. Agriculture · The Evolution and Current Status of Livestock Production and Meat Processing in Wisconsin Department of Agricultural and Applied Economics College of Agricultural

  1. Wisconsin Agriculture Department of Agricultural and Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    Wisconsin Agriculture 2012 STATUS OF Department of Agricultural and Applied Economics · Status­Extension College of Agricultural & Life Sciences UNIVERSITY OF WISCONSIN­MADISON #12;#12;Status of Wisconsin Agriculture, 2012 An annual report by the Department of Agricultural and Applied Economics, UW

  2. AGRICULTURE, 2007 Status of the Wisconsin Farm Economy

    E-Print Network [OSTI]

    Radeloff, Volker C.

    STATUS OF WISCONSIN AGRICULTURE, 2007 Status of the Wisconsin Farm Economy Situation and Outlook and Challenges · Current Prospects for the 2007 Farm Bill Department of Agricultural and Applied Economics College of Agricultural and Life Sciences University of Wisconsin-Madison Cooperative Extension University

  3. The Medical College of Wisconsin 6 THE MEDICAL COLLEGE OF WISCONSIN MEDICAL SCHOOL ACADEMIC BULLETIN 2011-2012

    E-Print Network [OSTI]

    for engagement in leading-edge science for students aspiring to advance medical knowledge through researchThe Medical College of Wisconsin 6 THE MEDICAL COLLEGE OF WISCONSIN MEDICAL SCHOOL ACADEMIC BULLETIN 2011-2012 The Medical College of Wisconsin offers MD, PhD, MA, MS and MPH degrees. There are more

  4. Withee, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to:WiseEnergy JumpWithee, Wisconsin:

  5. Wood, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources JumpWood, Wisconsin: Energy Resources Jump

  6. Wisconsin Public Service Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba, Canada)WisconsinWisconsin

  7. Milwaukee, Wisconsin: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01T23:59:59.000Z

    This brochure provides an overview of the challenges and successes of Milwaukee, WI, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  8. Madison, Wisconsin: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01T23:59:59.000Z

    This brochure provides an overview of the challenges and successes of Madison, WI, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  9. A Model Of Pedestal Structure J.D. Callen, University of Wisconsin, Madison, WI 53706-1609

    E-Print Network [OSTI]

    Princeton Plasma Physics Laboratory

    -limited, quasi-equilibrium pedestal structure be predicted? 00.0 52.1 05.2 57.3 00.5 0.0 2.0 4.0 6.0 8.0 0.0 1.0 2.0 3.0 4.0 0.0 3.0 6.0 9.0 2.1 0004 0024 0044 0064 0084 0005 0 1 2 3 4 ne - WMHD D T n e e ped ped · Discussion: sources of error -- in key data and paleoclassical theory pedestal profile evolution into ELMs

  10. UNIVERSITY OF WISCONSIN-MADISON, Madison, WI. Assistant Professor, tenure track, beginning August 2013. AOS: Philosophy of Mind.

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    2013. AOS: Philosophy of Mind. AOC: Open. Four courses per year at the undergraduate and graduate level

  11. Planning for Climate Impacts Wisconsin's Coastal Communities

    E-Print Network [OSTI]

    Sheridan, Jennifer

    in = Energy out Absorbed by ozone Absorbed by the earth Greenhouse effect UV radiation Solar radiation. Liebl Support provided by NOAA-SARP, Wisconsin Sea Grant, UW-Extension and UW-Madison College" ­ The Cornhill Magazine, 1860 Köppen climate subdivisions -1884 (30 year averages) NOAA #12;Visible Light Energy

  12. University of Wisconsin Fusion Technology Institute

    E-Print Network [OSTI]

    California at Los Angeles, University of

    with the MELCOR Code University of Wisconsin ­Madison Department of Engineering Physics Fusion Technology as fast as 800 kPa/s · MELCOR calculations were performed to determine whether the pressurization rate can be simulated · This paper reviews these experiments and utilizes MELCOR to simulate the experiments #12

  13. MEDICAL COLLEGE OF WISCONSIN Public Safety

    E-Print Network [OSTI]

    student from entering clerkship. At any time during an investigation, lockers are subject to searchMEDICAL COLLEGE OF WISCONSIN Public Safety Student Locker Assignment Record The following terms without prior notice. Your signature below indicates you have read and understand the terms and conditions

  14. Stormwater, Climate Change and Wisconsin's Coastal Communities

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Stormwater, Climate Change and Wisconsin's Coastal Communities Johnson Foundation at Wingspread · Precipitation and high water · Adapting to our changing climate · Assisting coastal communities Photo: WDNR #12 source of risk from changing climate. City of Green Bay watershed - #12;Predicted climate includes

  15. University of Wisconsin Department of Economics

    E-Print Network [OSTI]

    Sheridan, Jennifer

    University of Wisconsin Department of Economics Economics 548: The Economics of Health Care Spring, uncertainty, government involvement, and externalities, the economics of the health care sector and its will learn how to apply microeconomic tools to study the medical care system and analyze the economic aspects

  16. UNIVERSITY OF WISCONSIN-MILWAUKEE UWM LIBRARIES

    E-Print Network [OSTI]

    Saldin, Dilano

    UNIVERSITY OF WISCONSIN-MILWAUKEE UWM LIBRARIES that the Kurzweil will be reading will be highlighted in yellow and will change to green as it reads the word. Use will be highlighted in yellow and will change to green as it reads the word. Use the toolbar controls or the function

  17. UNIVERSITY OF WISCONSIN-MADISON MASTER'S THESIS

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    result from un- realistic representations of aerosol optical properties and biases in model cloud cover this study evaluate the radiative effects of aerosols on the climate system and offer new insightsUNIVERSITY OF WISCONSIN-MADISON MASTER'S THESIS A Global Survey of Aerosol Direct Effects Author

  18. ICRF IN THE WISCONSIN TOKAMAK AND TOKAPOLE II (Presented at the 20th Annual Meeting, Division

    E-Print Network [OSTI]

    Sprott, Julien Clinton

    ICRF IN THE WISCONSIN TOKAMAK AND TOKAPOLE II (Presented at the 20th Annual Meeting, Division in the Wisconsin Tokamak and Tokapole I 1.* A.P. BIDDLE and J.C. SPROTT. U. of Wisconsin, Madison, Wisconsin. Studies of wave coupi iI1g at powers !::!. :t50 watts in the Wisconsin Tokamak using insulated, unshielded

  19. Wisconsin Poverty Report: Jobs Recover to Help Reduce Poverty in 2012

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Wisconsin Poverty Report: Jobs Recover to Help Reduce Poverty in 2012 The Sixth Annual Report of the Wisconsin Poverty Project Timothy M. Smeeding Julia B. Isaacs Katherine A. Thornton Institute for Research on Poverty University of Wisconsin­Madison May 2014 #12;ABOUT THE WISCONSIN POVERTY PROJECT The Wisconsin

  20. Avoiding the Rush Hours: WiFi Energy Management via Traffic Isolation

    E-Print Network [OSTI]

    Shihada, Basem

    Avoiding the Rush Hours: WiFi Energy Management via Traffic Isolation Justin Manweiler Duke.rc@duke.edu ABSTRACT WiFi continues to be a prime source of energy consumption in mobile devices. This paper observes that, despite a rich body of research in WiFi energy management, there is room for improvement. Our key

  1. Virtual MISO Triggers in Wi-Fi-like Networks

    E-Print Network [OSTI]

    Virtual MISO Triggers in Wi-Fi-like Networks Oscar Bejarano Edward W. Knightly 1 Thursday, April 11 difficult to achieve in mobile devices Thursday, April 11, 2013 #12;5 Virtual MISO (vMISO) TX RX vMISO, 2013 #12;1. System Model 1.1. Distributed System 1.2. Single-Antenna Nodes 6 vMISO

  2. Worden, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy ResourcesWoods

  3. Wisconsin Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Wisconsin has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA)is making a meaningful down...

  4. The Economic Impact of Aurora Health Care in Wisconsin

    E-Print Network [OSTI]

    Saldin, Dilano

    The Economic Impact of Aurora Health Care in Wisconsin A report prepared for Aurora Health Care #12; 2 ABOUT THIS REPORT This study was prepared for Aurora

  5. SEP Success Story: Helping Wisconsin Small Businesses Increase...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    from the Wisconsin Economic Development Corporation and funding from a grant from the Energy Department's State Energy Program, this specific program has been able to increase its...

  6. Madison, Wisconsin: Solar in Action (Brochure), Solar America...

    Broader source: Energy.gov (indexed) [DOE]

    Madison, Wisconsin Includes case studies on: * Allowing Solar Energy Systems in Historic Districts * Helping Prospective Solar Owners Make Purchase Decisions * Developing Online...

  7. Vehicle Technologies Office Merit Review 2014: Alternative Fuel Market Development Program- Forwarding Wisconsin’s Fuel Choice

    Broader source: Energy.gov [DOE]

    Presentation given by Wisconsin Department of Administration at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about...

  8. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  9. Wi-Bi KTH Stockholm -TU Darmstadt Kurswahl Wi-Bi Department an der KTH: School of Architecture and Built Environmentv (ABE)

    E-Print Network [OSTI]

    Haller-Dintelmann, Robert

    Infrastructure Civil and Architectural Engineering Transport and Geoinformation Technology Sustainable UrbanWi-Bi KTH Stockholm - TU Darmstadt Kurswahl Wi-Bi Department an der KTH: School of Architecture ABE gewählt werden. Momentan von der ABE angebotene Programme: Architecture Real Estate Construction

  10. SEP Success Story: Helping Wisconsin Small Businesses Increase Sustainability

    Broader source: Energy.gov [DOE]

    The Wisconsin Profitable Sustainability Initiative (PSI) is designed to implement sustainable business practices within small- and medium-sized manufacturers. Thanks to financial support from the Wisconsin Economic Development Corporation and funding from a grant from the Energy Department’s State Energy Program, this specific program has been able to increase its outreach and support to local organizations. Learn more.

  11. The Economic Impacts of Agriculture in Wisconsin Counties

    E-Print Network [OSTI]

    Radeloff, Volker C.

    The Economic Impacts of Agriculture in Wisconsin Counties Steven Deller Department of Agricultural and Applied Economics University of Wisconsin­Madison/Extension David Williams Agricultural and Natural-Extension, Cooperative Extension program areas of Agriculture and Natural Resources and Community, Natural Resource

  12. University of Wisconsin 1998 Aspen Particle Physics Conference

    E-Print Network [OSTI]

    W. Badgett University of Wisconsin 1998 Aspen Particle Physics Conference 27­Jan­1998 Recent at the 1998 Aspen Particle Physics Winter Conference #12; W. Badgett University of Wisconsin 1998 Aspen 1998 Aspen Particle Physics Conference 27­Jan­1998 The HERA ep Collider at DESY 3 360m R=797m 360m 820

  13. Soil Test P vs. Total P in Wisconsin Soils

    E-Print Network [OSTI]

    Balser, Teri C.

    Soil Test P vs. Total P in Wisconsin Soils Larry G. Bundy & Laura W. Good Department of Soil Science University of Wisconsin-Madison #12;Introduction · Soil test P is often measured · Little information is available on total P content of soils · Why do we care about total P now? ­ Soil total P

  14. Soil Horizons Some Noteworthy Soil Science in Wisconsin

    E-Print Network [OSTI]

    Mladenoff, David

    Soil Horizons Some Noteworthy Soil Science in Wisconsin Alfred E. Hartemink The impact and benefits of soil science have only partly been documented. Here I highlight four noteworthy soil science achievements from the state of Wisconsin that took place between 1870 and the early 1980s: (i) the first soil

  15. University of Wisconsin-Madison Archives and Records Management

    E-Print Network [OSTI]

    Sheridan, Jennifer

    University of Wisconsin-Madison Archives and Records Management University Records and Information Governance 2011 University of Wisconsin-Madison, Archives and Records Management http://archives.library.wisc.edu/ recmgmt@library.wisc.edu 608-262-3284 UNIVERSITY RECORDS MANAGEMENT PROGRAM The University's teaching

  16. Abbotsford, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindey Wind6:00-06:00 U.S.ratios inAS s2Wisconsin: Energy

  17. Ackley, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindey Wind6:00-06:00AboutAchille, Oklahoma:Ackley, Wisconsin:

  18. Adell, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta Clara,Addington, Oklahoma:Addyston,Adell, Wisconsin:

  19. Ainsworth, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta2004) |Agawam,Ahmeek,Wisconsin: Energy Resources Jump

  20. Akan, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta2004)Airway Heights, Washington:Akan, Wisconsin:

  1. Brodhead, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable and Innovative EnergyHeights, Ohio:Brodhead, Wisconsin: Energy

  2. Brokaw, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable and Innovative EnergyHeights, Ohio:Brodhead, Wisconsin:Brokaw,

  3. Burke, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable andBucoda,Burke County, Georgia: Energy ResourcesWisconsin:

  4. Butler, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable andBucoda,BurkeNebraska: Energy Resources JumpButlerWisconsin:

  5. Cambridge, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainableCSL GasPermits Manual Jump to:(RECP) in Product: GeneralWisconsin:

  6. Warner, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwide Permit webpageWalthallFacility | OpenWarner, Wisconsin: Energy

  7. Weston, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwideWTED JumpHills,2732°, -76.7798172° ShowWisconsin: Energy

  8. Windsor, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwideWTEDBird,Wilsonville, Oregon:WindPoleWisconsin: Energy Resources

  9. Winneconne, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwideWTEDBird,Wilsonville,Winneconne, Wisconsin: Energy Resources Jump

  10. Wisconsin Electric Power Co | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation, search Equivalent

  11. Wisconsin Energy Center | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation, search

  12. Sherry, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk, New York: EnergySumoncle SolarNebraska:Sherry, Wisconsin: Energy

  13. Evansville, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazelPennsylvania: Energy Resources(RECP) inEuricoOpenCompanyWisconsin: Energy

  14. Evansville, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazelPennsylvania: Energy Resources(RECP) inEuricoOpenCompanyWisconsin:

  15. Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1 Wind Project JumpWisconsin: Energy Resources Jump to:

  16. Jefferson, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias SolarJaneJefferson, Iowa: Energy Resources JumpWisconsin:

  17. Knowlton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to: navigation, search GEOTHERMAL ENERGYGeothermalKnowlton, Wisconsin: Energy

  18. Hartland, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG| OpenInformation HandbookOhio:Connecticut:Wisconsin: Energy

  19. Hendren, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG|InformationInformation Station -YingeTexas:Hendren, Wisconsin:

  20. Xcel Energy Wisconsin | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: EnergyWyandanch, New York:State ParksWyrulec1991)

  1. Mastermind Session: Wisconsin Energy Conservation Corporation | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOil & GasTechnical Publications »of Energy Wisconsin Energy

  2. Ottawa, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri:EnergyOssian, New York: Energy ResourcesOtsego,Wisconsin: Energy

  3. Porter, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: EnergyPiratiniEdwards, Wisconsin:Porter County,

  4. Poygan, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: EnergyPiratiniEdwards,PoseyPoudrePowers Energy ofPoygan, Wisconsin:

  5. Primrose, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska:Precourt Institute for EnergyWister AreaPrime GLP IncWisconsin:

  6. Fermilab Today | University of Wisconsin Profile

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.New Mexico Feb. 13, 2013 NAME: University ofWisconsin June 27,

  7. Spencer, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,Southeast ColoradoOhio: Energy Resources Jump to:Wisconsin:

  8. Stettin, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,SoutheastSt.Steep Gradient FlumeEnergyStettin, Wisconsin: Energy

  9. Stoughton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,SoutheastSt.SteepStimulationStoneacre EnergyLake,Wisconsin:

  10. Summit, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar Jump to: navigation, searchNewOpen Energy(Colorado)Wisconsin: Energy

  11. Sussex, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar Jump to:Holdings Co Ltd Place:Mclaren,Sussex, Wisconsin: Energy

  12. Eaton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois: EnergyEastport, Maine: EnergyColorado: EnergyWisconsin:

  13. Edgar, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois: EnergyEastport,de NantesCryogenicsEdgar, Wisconsin:

  14. Newark, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall, Pennsylvania:Information296593°, -122.0402399° Show MapOhio:Wisconsin:

  15. Marathon, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther,Jemez PuebloManteca,Marana, Arizona: EnergyMarathonWisconsin:

  16. Maribel, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther,Jemez PuebloManteca,Marana, Arizona:Ohio:Maribel, Wisconsin:

  17. Menasha, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio: Energy8429°,Meeteetse,Illinois: EnergyMenasha, Wisconsin:

  18. Menomonie, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee Falls, Wisconsin: Energy Resources

  19. Mentor, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee Falls, Wisconsin: Energy ResourcesMentarix Pte

  20. Cooperstown, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew| ExplorationCooperstown, Wisconsin: Energy Resources

  1. Delafield, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE Facility Database DataDatatechnicNewDeafDeerDel Aire,Delafield, Wisconsin:

  2. Marshfield, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLu an Group JumpNew Hampshire:MarinWisconsin: Energy Resources

  3. Montrose, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,Monterey County,Monticello, Indiana: EnergyMontroseWisconsin:

  4. Mosinee, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,MontereyHill, California:Morse, Louisiana:Mosinee, Wisconsin:

  5. Nekimi, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall, Pennsylvania: EnergyEnergy InformationNaturaSystems |LLCNekimi, Wisconsin:

  6. Avon, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions Inc Jump to:Auriga EnergyAuxinWisconsin: Energy Resources Jump

  7. Wisconsin River Power Company | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba,Wisconsin River Power Company

  8. Richfield, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to: navigation,Maze - MakingMinnesota: EnergyWisconsin: Energy

  9. Rockdale, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to: navigation,MazeOhio:Ohio: Energy JumpRockdale County,Wisconsin:

  10. Roxbury, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County, Michigan:RotokawaRoxborough Park,Wisconsin:

  11. Rutland, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County,Vermont:Kentucky:Wisconsin: Energy Resources Jump

  12. Fulton, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°, -86.0529604°Wisconsin: Energy Resources Jump to: navigation,

  13. Genesee, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park, Texas:Webinars/Puesta enOpenEnergyOrderWisconsin: Energy

  14. Vienna, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga,planningFlowmeter Logging Jump to:Vicksburg,VideoconWisconsin: Energy

  15. Comparison of Home Retrofit Programs in Wisconsin

    SciTech Connect (OSTI)

    Cunningham, K.; Hannigan, E.

    2013-03-01T23:59:59.000Z

    To explore ways to reduce customer barriers and increase home retrofit completions, several different existing home retrofit models have been implemented in the state of Wisconsin. This study compared these programs' performance in terms of savings per home and program cost per home to assess the relative cost-effectiveness of each program design. However, given the many variations in these different programs, it is difficult to establish a fair comparison based on only a small number of metrics. Therefore, the overall purpose of the study is to document these programs' performance in a case study approach to look at general patterns of these metrics and other variables within the context of each program. This information can be used by energy efficiency program administrators and implementers to inform home retrofit program design. Six different program designs offered in Wisconsin for single-family energy efficiency improvements were included in the study. For each program, the research team provided information about the programs' approach and goals, characteristics, achievements and performance. The program models were then compared with performance results -- program cost and energy savings -- to help understand the overall strengths and weaknesses or challenges of each model.

  16. US hydropower resource assessment for Wisconsin

    SciTech Connect (OSTI)

    Conner, A.M.; Francfort, J.E.

    1996-05-01T23:59:59.000Z

    The Department of Energy is developing an estimate of the undeveloped hydropower potential in this country. The Hydropower Evaluation Software is a computer model that was developed by the Idaho National Engineering Laboratory for this purpose. The software measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven software program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report details the resource assessment results for the State of Wisconsin.

  17. Adapting to Climate Change in WisconsinAdapting to Climate Change in Wisconsin Strategies for Conservation ProfessionalsStrategies for Conservation Professionals

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Adapting to Climate Change in WisconsinAdapting to Climate Change in Wisconsin ­ Strategies Association December 9, 2010 David S. Liebl #12;Overview · Understanding climate change · Wisconsin's changing Vegetation indicators #12;Indicators of a changing climate J. Magnuson Source: IPCC 2007 Potter, et al

  18. Department of Agricultural and Applied Economics Cooperative ExtensionCooperative Extension University of Wisconsin-ExtensionUniversity of Wisconsin-Extension

    E-Print Network [OSTI]

    Williams, Justin

    the Drought ·The Wisconsin Farm Economy · Current Outlook · Feeding Nine Billion Department of Agricultural of agricultural and applied economics, university of Wisconsin-Madison. Because of the large and complex effects of the 2012 drought on Wisconsin agriculture, we begin this issue with a summary of the nature and impacts

  19. University of Wisconsin-Madison Improves Fuel Efficiency in Advanced...

    Broader source: Energy.gov (indexed) [DOE]

    of Wisconsin-Madison completed an EERE-supported project to develop high-efficiency combustion engines for light- and heavy-duty vehicles. By combining a number of different...

  20. Towards sustainable land stewardship : reframing development in Wisconsin's dairy gateway

    E-Print Network [OSTI]

    Finlayson, Ian James, 1974-

    2005-01-01T23:59:59.000Z

    Changing economic realities in the dairy industry have profoundly affected the viability of the dairy farming community in Wisconsin. In addition they face mounting local opposition to dairy modernization and expansion, ...

  1. Regulation of Dams and Bridges Affecting Navigable Waters (Wisconsin)

    Broader source: Energy.gov [DOE]

    Chapter 31 of the Wisconsin Statutes lays out the regulations relevant to dams and bridges on or near navigable waters. This statute establishes that the Department of Natural Resources has...

  2. University of Wisconsin-Madison Department of Agricultural & Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    University of Wisconsin-Madison Department of Agricultural & Applied Economics Staff Paper No. 561 and Nguyen Van Chan __________________________________ AGRICULTURAL & APPLIED ECONOMICS the nominal objectives-- reduced growth rates of air pollution, water pollution and solid waste--will also

  3. Annual Report Co-Directors, University of Wisconsin-Madison

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Annual Report 2007 Co-Directors, University of Wisconsin-Madison Dr. Molly Carnes, Jean Manchester .................................................................................................9 C. Funding Sources.............................................................................................12 V. WISELI Management and Infrastructure............12 A. Funding Sources

  4. Documentation of the database: Wisconsin power plant impact study

    SciTech Connect (OSTI)

    Shacham, S.; Chesters, G.; McLellan, H.

    1984-01-01T23:59:59.000Z

    This volume describes the data base of the first phase of the Wisconsin power plant impact study. Data were collected by investigators at the University of Wisconsin-Madison from 1971 to 1978 during their study of the Columbia Generating Station near Portage, Wisconsin. This volume serves as a communications link within the Wisconsin power plant impact study and as a means of making these data available to outside users for further analysis and synthesis. This volume provides a brief description of the data sets; a more extensive documentation of these sets are being published by the U.S. Environmental Protection Agency. The number accompanying each data set is unique and serves to identify a data set within the data base.

  5. University of Wisconsin-Madison Department of Agricultural & Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    Paper No. 481 Biodiesel Feasibility Study: An Evaluation of Biodiesel Feasibility in Wisconsin By T notice appears on all such copies. #12;Biodiesel Feasibility Study: An Evaluation of Biodiesel IS BIODIESEL.......................................................................6 ADVANTAGES OF BIODIESEL

  6. University of Wisconsin Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    modeling studies and applications designed to preserve or improve groundwater quality. ChargedUniversity of Wisconsin Water Resources Institute Annual Technical Report FY 2001 Introduction into the following four thematic areas: groundwater, surface water, groundwater/surface water interactions

  7. University of Wisconsin Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    modeling studies and applications designed to preserve or improve groundwater quality. The following reportUniversity of Wisconsin Water Resources Institute Annual Technical Report FY 2000 Introduction: groundwater, surface water, groundwater/surface water interactions, and drinking water initiatives. Faculty

  8. WiSARDNET: A SYSTEM SOLUTION FOR HIGH PERFORMANCE IN SITU ENVIRONMENTAL MONITORING

    E-Print Network [OSTI]

    WiSARDNET: A SYSTEM SOLUTION FOR HIGH PERFORMANCE IN SITU ENVIRONMENTAL MONITORING Zijiang Yang-temporal monitoring of environmental and ecosystems processes. WiSARDNet is a complete distributed sensing system, as well as careful energy management in a weatherproof package, allow high-performance data collection

  9. Exposure assessment of Electromagnetic Fields from Wireless Computer Networks (Wi-Fi); Phase 1 Laboratory Measurements

    E-Print Network [OSTI]

    Haddadi, Hamed

    Exposure assessment of Electromagnetic Fields from Wireless Computer Networks (Wi-Fi); Phase 1 networks, the most popular Wi-Fi devices used in the schools were identified. The regulatory standards bisecting the screen and keyboard. The maximum electric field strength recorded at 1 m varied from 719 mVm-1

  10. Ibarra-Kim approximcis algoritmusa Legyen adva n darab trgy pozitv egsz wi slyokkal s ei rtkekkel,

    E-Print Network [OSTI]

    Grolmusz, Vince

    Ibarra-Kim approximációs algoritmusa Legyen adva n darab tárgy pozitív egész wi súlyokkal és ei, hiszen a súlykorlátnál nehezebb tárgyakat úgysem vihetnénk magunkkal. Legyen OPT = max iI ei I {1, 2 M egy kés®bb alkalmasan választandó szám, ezzel készítsük el a wi = wi, ei = ei/M súlyokat és

  11. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  12. The Wide Field Spectrograph (WiFeS)

    E-Print Network [OSTI]

    Michael Dopita; John Hart; Peter McGregor; Patrick Oates; Gabe Bloxham; Damien Jones

    2007-05-02T23:59:59.000Z

    This paper describes the Wide Field Spectrograph (WiFeS) under construction at the Research School of Astronomy and Astrophysics (RSAA) of the Australian National University (ANU) for the ANU 2.3m telescope at the Siding Spring Observatory. WiFeS is a powerful integral field, double-beam, concentric, image-slicing spectrograph designed to deliver excellent thoughput, wavelength stability, spectrophotometric performance and superb image quality along with wide spectral coverage throughout the 320-950 nm wavelength region. It provides a 25x38 arcsec. field with 0.5 arcsec. sampling along each of twenty five 38X1 arcsec slitlets. The output format is optimized to match the 4096x4096 pixel CCD detectors in each of two cameras individually optimized for the blue and the red ends of the spectrum, respectively. A process of "interleaved nod-and-shuffle" will be applied to permit quantum noise-limited sky subtraction. Using VPH gratings, spectral resolutions of 3000 and 7000 are provided. The full spectral range is covered in a single exposure at R=3000, and in two exposures in the R=7000 mode. The use of transmissive coated optics, VPH gratings and optimized mirror coatings ensures a throughput (including telescope atmosphere and detector) > 30% over a wide spectral range. The concentric image-slicer design ensures an excellent and uniform image quality across the full field. To maximize scientific return, the whole instrument is configured for remote observing, pipeline data reduction, and the accumulation of calibration image libraries.

  13. U.S. DEPARThiENT OF ENERGY EERE PROJECT MA~AGE:\\-1E~T ...

    Broader source: Energy.gov (indexed) [DOE]

    RECIPIENT:Wisconsin Department of Administration STATE: WI PROJECT TITLE : Wisconsin Biodiesel Blending Program Funding Opportunity Announcement Number Procurement Instrument...

  14. The Carbon Balance of Bioenergy Production in Wisconsin Keith R. Cronin

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    of the GREET model. Finally, I am grateful to the Wisconsin Focus on Energy program for funding this research potentially supply Wisconsin with a domestic energy source and supplement income for Wisconsin producers from the National Agricultural Statistics Service (NASS) and crop enterprise budgets, produced

  15. Department of Chemical and Biological Engineering University of WisconsinMadison

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Department of Chemical and Biological Engineering University of Wisconsin­Madison Annual Report 2008-09 #12;Department of Chemical and Biological Engineering University of Wisconsin­Madison 1415://www.engr.wisc.edu/che DEPARTMENT OF CHEMICAL AND BIOLOGICAL ENGINEERING University of Wisconsin­Madison Annual Report for 2008

  16. Survey of Job Openings in the 7 Counties of Southeastern Wisconsin: Week of May 25, 2009

    E-Print Network [OSTI]

    Saldin, Dilano

    Survey of Job Openings in the 7 Counties of Southeastern Wisconsin: Week of May 25, 2009 Prepared by the Department of Labor Employment and Training WIRED grant." #12;Job Openings Survey for Southeastern Wisconsin and Training Institute 1 Survey of Job Openings in the 7 Counties of Southeastern Wisconsin: Week of May 25

  17. Wolf River, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to:WiseEnergyRiver, Wisconsin: Energy

  18. Portage County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: EnergyPiratiniEdwards, Wisconsin: EnergyReading,Wisconsin: Energy

  19. HEALTHIER WISCONSIN PARNTERSHIP PROGRAM Direct, Indirect and Unallowable Costs

    E-Print Network [OSTI]

    HEALTHIER WISCONSIN PARNTERSHIP PROGRAM Direct, Indirect and Unallowable Costs Direct and Indirect Costs The decision of whether a cost is direct or indirect is based on the ability to specifically identify the cost with the project, rather than on the nature of the goods and services. Failure to mention

  20. Climate Change Science and Impacts in Northeast Wisconsin

    E-Print Network [OSTI]

    Sheridan, Jennifer

    in = Energy out Absorbed by ozone Absorbed by the earth Greenhouse effect UV radiation Solar radiation. Liebl Support provided by NOAA-SARP, Wisconsin Sea Grant, UW-Extension and UW-Madison College" ­ The Cornhill Magazine, 1860 Köppen climate subdivisions -1884 (30 year averages) NOAA #12;Visible Light Energy

  1. UNIVERSITY OF WISCONSIN MADISON 2014 YOUTH EVENT HEALTH FORM

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    -the-counter medications are available from camp health staff. Name of primary care provider: Phone Number: Medications 111/8/2013 UNIVERSITY OF WISCONSIN ­ MADISON 2014 YOUTH EVENT HEALTH FORM Event Name: Dates of insurance card here) Policy #: HEALTH INFORMATION (CHECK ALL THAT APPLY) Asthma Is an inhaler required

  2. UNIVERSITY OF WISCONSIN-MADISON UNIVERSITY HEALTH SERVICES

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    (s) authorized by this form to receive your health information are not health care providers or other people whoUNIVERSITY OF WISCONSIN-MADISON UNIVERSITY HEALTH SERVICES HIM (Medical Records) 333 East Campus FOR RELEASE OF OCCUPATIONAL HEALTH RECORDS 1. Regarding Patient COMPLETE IN FULL (See reverse side for further

  3. UNIVERSITY OF WISCONSIN-MADISON CENTER FOR THE MATHEMATICAL SCIENCES

    E-Print Network [OSTI]

    Liblit, Ben

    as well as in multivariate polynomial interpolation. In this paper we characterize the dual space P are discussed as well. In section 2, after defining the space P and its associated differential operators, weUNIVERSITY OF WISCONSIN-MADISON CENTER FOR THE MATHEMATICAL SCIENCES On two polynomial spaces

  4. University of Wisconsin-Madison Department of Agricultural & Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    April 2008 The Effect of Ethanol Production on the U.S. National Corn Price By T. Randall Fortenbery that this copyright notice appears on all such copies. #12;The Effect of Ethanol Production on the U.S. National Corn, University of Wisconsin at Madison. Senior authorship not assigned. #12;The Effect of Ethanol Production

  5. INNOVATIONS Electrical and Computer Engineering University ofWisconsin-Madison

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    INNOVATIONS Electrical and Computer Engineering University ofWisconsin-Madison 2013 www and students of the UW-Madison Department of Electrical and Computer Engineering continue to push boundaries it possible to give students hands-on experience with electrical and computer engineering concepts earlier

  6. CenterPulse Wisconsin National Primate Research Center

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Welcome to our year in review, CenterPulse. We hope you enjoy the new format. In making our news more Primate Center Seminars 15 What's new at the WNPRC? 2009 Year in Review Since our last newsletter as assistant director, for the many people they have CenterPulse 2009 Year in Review 1 Views of the Wisconsin

  7. Wisconsin DOT 1. Briefly summarize your current pavement smoothness requirements.

    E-Print Network [OSTI]

    Wisconsin DOT 1. Briefly summarize your current pavement smoothness requirements. We currently-contact profiling equipment. Most PCC pavements are profiled using lightweight profilers when the project is still closed to traffic. Most HMA pavements are profiled using high speed profilers (with the same measuring

  8. University of Wisconsin-Madison Department of Agricultural & Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    support for this work was provided by the Center for World Affairs and the Global Economy (WAGE section I very briefly describe the "globalization" of the world economy and what it does and does August 2010 Economic Impact of Foreign Exports on the Wisconsin Economy By Steven Deller

  9. Department of Spanish and Portuguese University of Wisconsin-Madison

    E-Print Network [OSTI]

    Scharer, John E.

    Department of Spanish and Portuguese University of Wisconsin-Madison 1018 Van Hise Hall 1220 Linden. Contact the Department of Spanish and Portuguese for details. 2013-2014 Courses Open to Incoming Students on & Composi on PORTUG 301 Intensive Portuguese for Spanish speakers PORTUG 311 Fourth Year Composi

  10. TRANSFER AGREEMENT SCHOOL OF INFORMATION STUDIES AT UNIVERSITY OF WISCONSIN

    E-Print Network [OSTI]

    Saldin, Dilano

    : Information Security Specialist SCHOOL OF INFORMATION STUDIES AT UNIVERSITY OF WISCONSIN ­ MILWAUKEE: (SOIS at UWM) B.S. in Information Resources RATIONALE: The Information Security Specialist associate degree will prepare you to develop information security strategies, perform risk analysis, install security software

  11. Llandoverian to Ludlovian barrier reef complex in southeast Wisconsin

    SciTech Connect (OSTI)

    Rovey, C.W. (Univ. of Wisconsin, Milwaukee (USA))

    1989-08-01T23:59:59.000Z

    Subsurface exploration in the Michigan basin established that a carbonate bank and barrier reef complex prograded basinward during the late Wenlockian to early Ludlovian, but the corresponding Niagaran Series is generally undifferentiated. In southeast Wisconsin the series is well exposed; thus, a better record of depositional history is available. Until now, reefs in the Racine formation of southeast Wisconsin (upper Wenlockian through lower Ludlovian) were interpreted as patch reefs built landward of the barrier complex. However, the following criteria are consistent with an extension of Michigan's northern barrier complex beneath Lake Michigan to southeast Wisconsin: (1) Ubiquitous presence of reef facies along a southwest to northeast trend. This trend is coincident with thickening and a facies change indicative of a deep to shallow water transition, (2) similarity in depositional sequence of the overlying Salina Group in Wisconsin and Michigan. The Salina sediments surround, but are absent over, structures interpreted as pinnacle reefs and form a feather edge against the thicker belt interpreted as a barrier complex. Hence, the Racine reefs are reinterpreted as a barrier complex. Hence, the Racine reefs are reinterpreted as a barrier and pinnacle reef complex. Similar facies changes are also present in older formations. Intraformational truncation surfaces in the underlying Waukesha Dolomite (upper Llandoverian to lower Wenlockian) clearly indicate the presence of a nearby carbonate slope. Therefore, the carbonate buildup originated prior to the Wenlockian and migrated further basinward than previously believed.

  12. COLLEGE OF ENGINEERING UNIVERSITY OF WISCONSIN-MADISON ANNUAL REPORT

    E-Print Network [OSTI]

    will be in finding substitutes for some critical materials NickBerard 3 that are often concentrated within one UNIVERSITY OF WISCONSIN­MADISON #12;Message from the Dean Ian Robertson: On becoming an engine of materials research innovation Materials play such a foundational role in advancing civilization

  13. University of Wisconsin-Madison Department of Agricultural & Applied Economics

    E-Print Network [OSTI]

    Radeloff, Volker C.

    * Ian Coxhead** University of Wisconsin Sisira Jayasuriya University of Melbourne "Environmental damage there is more than one sectoral source of environmental damage, a policy or price shock may have unexpected environmental and welfare results. Key Words: Trade policy, pollution, deforestation, developing countries. JEL

  14. University of Wisconsin Faculty Document 1994 Madison 7 May 2007

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    University of Wisconsin Faculty Document 1994 Madison 7 May 2007 As adopted by the Faculty Senate IN MANAGING THEIR PUBLISHING RIGHTS AND AGREEMENTS Submitted by the Library Committee Background The UW authors in managing their publishing rights and agreements. Institutions and organizations around

  15. Sustainability of the cement and concrete industries UWM Center for By-Products Utilization, University of Wisconsin-Milwaukee, Milwaukee, WI, USA

    E-Print Network [OSTI]

    Wisconsin-Milwaukee, University of

    Sustainability of the cement and concrete industries T.R. Naik UWM Center for By of the most widely used construction materials in the world. However, the production of portland cement); production of one ton of portland cement produces about one ton of CO2 and other GHGs. The environmental

  16. DIMACS Technical Report 9425 On GarsiaRemmel Problem of Rook Equivalence

    E-Print Network [OSTI]

    , Princeton, NJ 08540 Paul Terwilliger 3 Department of Mathematics, University of Wisconsin, Madison, WI 53706

  17. Price-based Congestion-Control in Wi-Fi Hot Spots Roberto Battiti(*), Marco Conti(**), Enrico Gregori(**), Mikalai Sabel(*)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    if they are in the transmission range of an access point. A new business model, named Wi-Fi Hot Spots, is now emerging to exploit offer with Wi-Fi. To reach an efficient use of the scarce bandwidth resources, market mechanisms the potentialities of this technology. A hot spot is a "critical" business area, e.g., airports, stations, hotels

  18. Wisconsin's 4th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation,

  19. Mines&Guest&Wi+Fi&Access&Request& Page%1%of%2% % %%%%%Mines%Guest%Wi2Fi%Access%Request%(212FEB22014)%

    E-Print Network [OSTI]

    ,%also%known%as%CCIT,%a%provides%access%to%the% Mines%data%wireless%network%(Wi2Fi)%free%of%charge%and%password%that%can%be%given%to%the%guest.%% The%guest%will%need%to%connect%his%or%her%computer%to%the%`CSMguest'%wireless%network%activities%not%sponsored%by%Mines.%The%attached%form%should% be%used%to%request%network%access%for%guests%to%Mines.%Please%contact%CCIT's%networking

  20. Instituto Babcock Pamela Ruegg, Dam Rasmussen, y Doug Reinemann, Universidad de Wisconsin Instituto Babcock

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Instituto Babcock © Pamela Ruegg, Dam Rasmussen, y Doug Reinemann, Universidad de Wisconsin. Pamela Ruegg, Dam Rasmussen, and Doug Reinemann Traductor: Matías Fernandez Introducción La producción y

  1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  2. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  3. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  4. Model for energy efficiency in radio over fiber distributed indoor antenna Wi-Fi network

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Model for energy efficiency in radio over fiber distributed indoor antenna Wi-Fi network Yves Josse communications in indoor environments. In this paper, the power consumption and energy efficiency of a DAS using for different transmission configurations, yielding a distance- dependent energy efficiency model. In a second

  5. Virtual MISO Triggers in WiFi-like Networks Oscar Bejarano and Edward W. Knightly

    E-Print Network [OSTI]

    Knightly, Edward W.

    Virtual MISO Triggers in WiFi-like Networks Oscar Bejarano and Edward W. Knightly ECE Department, Rice University, Houston, TX 77005 Technical Report Abstract--Virtual Multiple-Input Single-Output (vMISO) sys- tems distribute multi-antenna diversity capabilities between a sending and a cooperating node. vMISO

  6. Virtual MISO Triggers in Wi-Fi-like Networks Oscar Bejarano and Edward W. Knightly

    E-Print Network [OSTI]

    Knightly, Edward W.

    Virtual MISO Triggers in Wi-Fi-like Networks Oscar Bejarano and Edward W. Knightly ECE Department-Input Single-Output (vMISO) sys- tems distribute multi-antenna diversity capabilities between a sending and a cooperating node. vMISO has the potential to vastly improve wireless link reliability and bit error rates

  7. WiP Abstract: BraceForce: Software Engineering Support for Sensing in CPS Applications

    E-Print Network [OSTI]

    Julien, Christine

    support in a way that is easy, flexible, and portable is essential for supporting CPS applicationWiP Abstract: BraceForce: Software Engineering Support for Sensing in CPS Applications Xi Zheng and deploying CPS applications involves a large amount of low-level programming that requires interacting

  8. TERAGRID 2007 CONFERENCE, MADISON, WI 1 Cyberinfrastructure for Remote Sensing of Ice Sheets

    E-Print Network [OSTI]

    TERAGRID 2007 CONFERENCE, MADISON, WI 1 Cyberinfrastructure for Remote Sensing of Ice Sheets Dr rise and melting ice sheets is the application domain of this project. It is an issue of global impor of computationally intensive tools and models that will help them measure and predict the response of ice sheets

  9. Saving Energy on WiFi With Required IPsec Youngsang Shin, Steven Myers, and Minaxi Gupta

    E-Print Network [OSTI]

    Gupta, Minaxi

    Saving Energy on WiFi With Required IPsec Youngsang Shin, Steven Myers, and Minaxi Gupta School.indiana.edu,samyers@indiana.edu,minaxi@cs.indiana.edu Abstract. The move to a pervasive computing environment, with the increas- ing use of laptops, netbooks a transitory network connection due to mobility or energy-saving protocols. In this work we study the ability

  10. Session Lengths and IP Address Usage of Smartphones in a University Campus WiFi

    E-Print Network [OSTI]

    Wang, Bing

    to laptops and desktop PCs, network usage characteristics of smartphones may differ significantly becauseSession Lengths and IP Address Usage of Smartphones in a University Campus WiFi Network be used more opportunistically. In this paper, we study two important network usage characteristics

  11. Life-Add: Lifetime Adjustable Design for WiFi Networks with Heterogeneous Energy Supplies

    E-Print Network [OSTI]

    Sinha, Prasun

    Life-Add: Lifetime Adjustable Design for WiFi Networks with Heterogeneous Energy Supplies Shengbo Chen§, Tarun Bansal§, Yin Sun§, Prasun Sinha and Ness B. Shroff Department of ECE, The Ohio State University Department of CSE, The Ohio State University Email: {chens,shroff}@ece.osu.edu, {bansal,prasun}@cse.ohio

  12. Geophysical Surveying with Marine Networked Mobile Robotic Systems: The WiMUST Project

    E-Print Network [OSTI]

    Jesus, Sérgio M.

    Geophysical Surveying with Marine Networked Mobile Robotic Systems: The WiMUST Project [Extended for geophysical surveying. This paper describes the main features of the envisaged developments, with a focus.00. Figure 1: Conventional geophysical surveying using long lines of towed streamers team. Such teams

  13. Wi$eUp Retirement Planning Basicswww.wiseupwomen.org 7-1 Retirement Planning Basics

    E-Print Network [OSTI]

    is important to women, the importance of investing early for retirement, how to estimate retirement incomeWi$eUp ­ Retirement Planning Basicswww.wiseupwomen.org 7-1 Chapter 7. Retirement Planning Basics Retirement planning is important for everyone, but especially for women. Even if retirement is many years

  14. BreezChirp: Energy Efficient Wi-Fi Bandwidth Estimator for Smartphones

    E-Print Network [OSTI]

    Boutaba, Raouf

    ; two, terminal mobility requires frequent update of bandwidth measurements; three, energy efficiencyBreezChirp: Energy Efficient Wi-Fi Bandwidth Estimator for Smartphones Jian Li, Jin Xiao, Huu Nhat--Mobile data service is a rapidly growing business sector today. Available application bandwidth

  15. Database Updating Through User Feedback in Fingerprint-Based Wi-Fi Location Systems

    E-Print Network [OSTI]

    Sekercioglu, Y. Ahmet

    Database Updating Through User Feedback in Fingerprint-Based Wi-Fi Location Systems Thomas- Fi signals. It first requires the construction of a database of "fingerprints", i.e. signal strengths it with the different reference fingerprints in the database. The main disadvantage of this technique is the labour

  16. 1 | P a g e UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    1 | P a g e UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR DARS QUICK GUIDE: FACULTY & STAFF 1. Login to the DARS site using your NetID and Password. If you do not have access to DARS, complete the DARS Access Request form. 2. On the displayed request page, enter the student's Campus ID and click Get

  17. UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR DARS QUICK GUIDE: STUDENTS

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR DARS QUICK GUIDE: STUDENTS Quick Links: Request, select DARS-View my Report in the drop-down menu under the Academics section and click the Go button. #12;3. You can submit a BASIC REPORT or a WHAT-IF REPORT. BASIC REPORT: To run a DARS for a major

  18. UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR DARS QUICK GUIDE: STUDENTS

    E-Print Network [OSTI]

    Bohnhoff, David

    UNIVERSITY OF WI-MADISON OFFICE OF THE REGISTRAR DARS QUICK GUIDE: STUDENTS 1. Go to your Student Center from your MyUW page. 2. In your Student Center, click DARS-View my Report under the Academic the Degree Plan you wish to run by clicking the appropriate radio button You can ask DARS to include or omit

  19. Special Publication 800-127 Guide to Securing WiMAX

    E-Print Network [OSTI]

    Padgette of Booz Allen Hamilton. The authors would also like to thank the WiMAX Forum of the National Institute of Standards and Technology (NIST) and Cyrus Tibbs and Matthew Sexton of Booz Allen Hamilton, wish to thank their colleagues who reviewed drafts of this document and contributed to its

  20. Oceanography Vol.21, No.4118 WiNter-SpriNg StormS aNd

    E-Print Network [OSTI]

    Oceanography Vol.21, No.4118 WiNter-SpriNg StormS aNd their iNflueNce oN SedimeNt reSuSpeNSioN, tra-grained materials to the southern basin, (4) resuspension surrogates based on 50 years of wave data show

  1. Sentinel: Occupancy Based HVAC Actuation using Existing WiFi Infrastructure within Commercial Buildings

    E-Print Network [OSTI]

    Gupta, Rajesh

    Sentinel: Occupancy Based HVAC Actuation using Existing WiFi Infrastructure within Commercial.agarwal@cs.cmu.edu ABSTRACT Commercial buildings contribute to 19% of the primary energy consumption in the US, with HVAC systems accounting for 39.6% of this usage. To reduce HVAC energy use, prior studies have pro- posed using

  2. 36 SEPTEMBER | 2012 WiNd TURbiNE CAPACiTY

    E-Print Network [OSTI]

    Kusiak, Andrew

    36 SEPTEMBER | 2012 WiNd TURbiNE CAPACiTY FRONTiER FROM SCAdA ThE WORld hAS SEEN A significant contributor to this growth. The wind turbine generated energy depends on the wind potential and the turbine of wind turbines. Supervi- sory control and data acquisition (SCADA) systems record wind turbine

  3. WVDL PATHOLOGY SECTION-PROCEDURES AND FEES PROCEDURES WI Out-of-State

    E-Print Network [OSTI]

    digestion, incineration, and cremation are at additional cost (see below). OTHER PROCEDURES WI Out.00$ arrangements have been made. ANIMAL CARCASS DISPOSAL Madison Lab Incineration of carcasses 0.35/lb 0.53/lb Tissue digestion of carcasses 0.35/lb 0.53/lb Barron Lab Incineration of carcasses 0.50/lb 0.75/lb

  4. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  5. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  6. University of WisconsinMadison Federal Research Highlights and Impacts 2014

    E-Print Network [OSTI]

    Yavuz, Deniz

    been consistently in the top five in annual research spending every year over the last two decades to Wisconsin's economy. Not only do research universities spur the development of new companies, but at timesUniversity of Wisconsin­Madison Federal Research Highlights and Impacts 2014 #12;UNIVERSITY

  7. Helping Keep the State's Economy Afloat Economic Impact of Wisconsin's Commercial Ports

    E-Print Network [OSTI]

    Minnesota, University of

    of water transportation #12;Wisconsin's International connections are made through the St. Lawrence Seaway via the Great Lakes http://www.lre.usace.army.mil/_storage/Pages/1721/seaway(SLSMC).jpg #12;The-output information for 425 Wisconsin industries § Contains spending and consumption patterns for private and public

  8. Oneida Tribe of Indians of Wisconsin Energy Optimization Model

    SciTech Connect (OSTI)

    Troge, Michael [Project Manager

    2014-12-30T23:59:59.000Z

    Oneida Nation is located in Northeast Wisconsin. The reservation is approximately 96 square miles (8 miles x 12 miles), or 65,000 acres. The greater Green Bay area is east and adjacent to the reservation. A county line roughly splits the reservation in half; the west half is in Outagamie County and the east half is in Brown County. Land use is predominantly agriculture on the west 2/3 and suburban on the east 1/3 of the reservation. Nearly 5,000 tribally enrolled members live in the reservation with a total population of about 21,000. Tribal ownership is scattered across the reservation and is about 23,000 acres. Currently, the Oneida Tribe of Indians of Wisconsin (OTIW) community members and facilities receive the vast majority of electrical and natural gas services from two of the largest investor-owned utilities in the state, WE Energies and Wisconsin Public Service. All urban and suburban buildings have access to natural gas. About 15% of the population and five Tribal facilities are in rural locations and therefore use propane as a primary heating fuel. Wood and oil are also used as primary or supplemental heat sources for a small percent of the population. Very few renewable energy systems, used to generate electricity and heat, have been installed on the Oneida Reservation. This project was an effort to develop a reasonable renewable energy portfolio that will help Oneida to provide a leadership role in developing a clean energy economy. The Energy Optimization Model (EOM) is an exploration of energy opportunities available to the Tribe and it is intended to provide a decision framework to allow the Tribe to make the wisest choices in energy investment with an organizational desire to establish a renewable portfolio standard (RPS).

  9. Brown County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainable and InnovativeBrookmont, Maryland:BroomeSouth Dakota:Wisconsin:

  10. Washington County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown ofNationwide PermitInformationIsland: Energy Resources JumpWisconsin:

  11. Wisconsin's 3rd congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation, searchRapids,

  12. Wisconsin's 5th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation,Information 5th

  13. Wisconsin's 8th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells, Wisconsin: Energy Resources Jump to: navigation,Information

  14. City of Clintonville, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here.TelluricPowerCity of Aplington,City of Clintonville, Wisconsin

  15. Wisconsin - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14TotalTheE. Great Basin Oil andBOEWest4 PaulWisconsin

  16. Wisconsin - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14TotalTheE. Great Basin Oil andBOEWest4Wisconsin

  17. Wood County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1 Wind Project JumpWisconsin: Energy ResourcesWolverine

  18. City of Stoughton, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin UrbanCity ofCity of Spencer, IowaCity ofStoughton, Wisconsin

  19. Port Edwards, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: EnergyPiratiniEdwards, Wisconsin: Energy Resources Jump to:

  20. Grand Rapids, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting JumpGove County,Texas: Energy Resources JumpWisconsin:

  1. Green County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting JumpGoveNebraska:Ethanol LLC GOsourceWisconsin: Energy

  2. Eau Claire County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois: EnergyEastport, Maine:Eau Claire County, Wisconsin:

  3. Elm Grove, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest,Energy Information Elkhorn HotGrove, Wisconsin: Energy

  4. Oneida County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellenceOffice ofInformationOnChip PowerIdaho:Wisconsin:

  5. Menomonee Falls, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee Falls, Wisconsin: Energy Resources (Redirected from

  6. Menomonee Falls, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee Falls, Wisconsin: Energy Resources (Redirected

  7. Cross Plains, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew|CoreCp HoldingsCrofutt'sWyoming:Plains, Wisconsin:

  8. DeForest, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE Facility Database DataDatatechnicNew Jersey: EnergyDeForest, Wisconsin:

  9. Door County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale, Michigan:EmerlingDoor County, Wisconsin: Energy Resources

  10. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhavenMassachusetts RegionsPaulShadesVirginia RegionsWisconsin Regions

  11. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhavenMassachusetts RegionsPaulShadesVirginia RegionsWisconsin

  12. Ashland County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrimArkansasAshford, Alabama: Energy ResourcesOhio:Wisconsin:

  13. New Berlin, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall, Pennsylvania: EnergyEnergyPPCR)Nevis Engine Company JumpWisconsin: Energy

  14. Wisconsin Electric Power Co (Michigan) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba, Canada) JumpWisconsin

  15. Wisconsin Power & Light Co | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba, Canada)Wisconsin Power &

  16. Wisconsin Power and Light Company Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba, Canada)Wisconsin Power

  17. Wisconsin Public Service Corp (Michigan) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung's pictureWindManitoba, Canada)Wisconsin

  18. Rusk County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County,Vermont: EnergyEasementsRushville, Ohio:Wisconsin:

  19. Francis Creek, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump to:ar-80m.pdfFillmoreGabbsSalonga,Francis Creek, Wisconsin: Energy

  20. Two Rivers, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, IndianaTurtle Airships Jump to:TwiggsJemez Mountains,Wisconsin:

  1. Vilas County, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga,planningFlowmeter Logging JumpWorkstreamVilas County, Wisconsin:

  2. Village of Cashton, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga,planningFlowmeter LoggingVillage of Cashton, Wisconsin (Utility

  3. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  4. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  5. 546 APPLICATION OF CHIMERAS IN CELL PHYSIOLOGY WI subcellular distributions, with high selectivity for synaptic vesicles22 or the

    E-Print Network [OSTI]

    Machen, Terry E.

    546 APPLICATION OF CHIMERAS IN CELL PHYSIOLOGY WI subcellular distributions, with high selectivity-biotin derivative is targeted to specific organelles expressing avidin chimera proteins. Until recently, the major

  6. 30 ENGINEERING & SCIENCE WI NTE R 2012 Whether processing radar signals in Norway or assessing rock properties in Nigeria, Calte

    E-Print Network [OSTI]

    30 ENGINEERING & SCIENCE WI NTE R 2012 Whether processing radar signals in Norway or assessing rock deeply into basic physics to solve problems. Oslo, Norway, José Navarro, PhD '94, Astronomy José Navarro

  7. The Wisconsin Home Energy Rating System: Final report

    SciTech Connect (OSTI)

    Ebisch, L.

    1986-09-30T23:59:59.000Z

    The Wisconsin Home Energy Rating System (HERS) has been developed by the Department of Industry, Labor, and Human Relations under contract to the Department of Administration, Division of State Energy. The contract is funded by the US Department of Energy. The contract calls for development of a home energy rating system for 1- and 2-family dwellings, or adaptation of an already existing one, for one by the State of Wisconsin. The rating system was to be developed in the form of a simple rating tool which could be distributed for testing through municipal building inspectors. At the time it was distributed, results were to be returned and analyzed for accuracy and ease of use. Computer modeling was to be used to verify accuracy. An Ad Hoc Committee of people involved in the home market, in utilities, and in state government energy conservation agencies was established to advise DILHR and DSE staff on development of the rating system. (See Appendix G for a list of the Ad Hoc Committee members). The Ad Hoc Committee had a number of concerns about how the HERS might affect the real estate market, and whether it was worth doing. Their input helped set the direction the HERS was to aim at, and their advice, from several different angles of the home market, was very helpful to staff. This report will give some background on the process of development of the HERS and the Ad Hoc Committee, and then will give details of the technical development.

  8. UNLV OFFICE OF INFORMATION TECHNOLOGY WIRELESS NETWORK (Wi-Fi) POLICY

    E-Print Network [OSTI]

    Hemmers, Oliver

    : Data and Information Security, Sections 2.1 and 3.3 http://system.nevada.edu/tasks/sites/Nshe/assets/File/BoardOfRegents/Procedures/P& GM%20CH14%20-%20DATA%20AND%20INFORMATION%20SECURITY.pdf CONTACTS Refer to the Office of InformationUNLV OFFICE OF INFORMATION TECHNOLOGY WIRELESS NETWORK (Wi-Fi) POLICY RESPONsmLE ADMINISTRATOR

  9. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  10. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  11. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  12. Groundwater pollution's effects on residential property values, Portage County, Wisconsin

    SciTech Connect (OSTI)

    Malone, P.; Barrows, R.

    1990-01-01T23:59:59.000Z

    Nitrate pollution of groundwater had no statistically significant effect on the price of residential property in a study in Portage County, Wisconsin. These results, however, do not mean that groundwater pollution has no cost. Sellers may be forced to wait longer to sell it to a buyer who is uninformed or simply does not care about nitrate pollution, so the cost of pollution may be denominated in time rather than sale price. A closer examination of market processes suggests that sellers may also absorb pollution costs by drilling new wells or purchasing filters in response to demands from realtors, lenders or buyers. Groundwater pollution costs do not appear in property prices but are likely absorbed in other ways.

  13. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  14. 2013 Wisconsin Forum on Advanced Computing in Engineering ~ Poster Session Overview ~

    E-Print Network [OSTI]

    Evans, Paul G.

    2013 Wisconsin Forum on Advanced Computing in Engineering ~ Poster and Thermal Mixing in Desuperheating Applications Mario Trujillo Employed at General Motors Eelco Gehring Numerical Simulation of Heat Transfer Mechanisms in Spray

  15. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Wisconsin

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01T23:59:59.000Z

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Wisconsin.

  16. Executive Committee University of Wisconsin-Madison Faculty Division of the Physical Sciences

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Executive Committee University of Wisconsin-Madison Faculty Division of the Physical Sciences 1 in description Current: A freshman level course which provides the undergraduate engineering student which provides the undergraduate engineering student with a background in descriptive geometry

  17. How Does Employment Growth in Wisconsin Compare to Other States Over the Past Decade?

    E-Print Network [OSTI]

    Saldin, Dilano

    How Does Employment Growth in Wisconsin of employment growth in the state. Yet, for all the politicized spinning of official employment statistics in recent years, there has been little systematic

  18. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  19. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  20. Wisconsin Energy and Cost Savings for New Single- and Multifamily Homes: 2009 and 2012 IECC as Compared to the Wisconsin Uniform Dwelling Code

    SciTech Connect (OSTI)

    Lucas, Robert G.; Taylor, Zachary T.; Mendon, Vrushali V.; Goel, Supriya

    2012-04-01T23:59:59.000Z

    The 2009 and 2012 International Energy Conservation Codes (IECC) yield positive benefits for Wisconsin homeowners. Moving to either the 2009 or 2012 IECC from the current Wisconsin state code is cost effective over a 30-year life cycle. On average, Wisconsin homeowners will save $2,484 over 30 years under the 2009 IECC, with savings still higher at $10,733 with the 2012 IECC. After accounting for upfront costs and additional costs financed in the mortgage, homeowners should see net positive cash flows (i.e., cumulative savings exceeding cumulative cash outlays) in 1 year for both the 2009 and 2012 IECC. Average annual energy savings are $149 for the 2009 IECC and $672 for the 2012 IECC.

  1. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  2. Radio-isotope production scale-up at the University of Wisconsin

    SciTech Connect (OSTI)

    Nickles, Robert Jerome [Univ of Wisconsin] [Univ of Wisconsin

    2014-06-19T23:59:59.000Z

    Our intent has been to scale up our production capacity for a subset of the NSAC-I list of radioisotopes in jeopardy, so as to make a significant impact on the projected national needs for Cu-64, Zr-89, Y-86, Ga-66, Br-76, I-124 and other radioisotopes that offer promise as PET synthons. The work-flow and milestones in this project have been compressed into a single year (Aug 1, 2012- July 31, 2013). The grant budget was virtually dominated by the purchase of a pair of dual-mini-cells that have made the scale-up possible, now permitting the Curie-level processing of Cu-64 and Zr-89 with greatly reduced radiation exposure. Mile stones: 1. We doubled our production of Cu-64 and Zr-89 during the grant period, both for local use and out-bound distribution to ? 30 labs nationwide. This involved the dove-tailing of beam schedules of both our PETtrace and legacy RDS cyclotron. 2. Implemented improved chemical separation of Zr-89, Ga-66, Y-86 and Sc-44, with remote, semi-automated dissolution, trap-and-release separation under LabView control in the two dual-mini-cells provided by this DOE grant. A key advance was to fit the chemical stream with miniature radiation detectors to confirm the transfer operations. 3. Implemented improved shipping of radioisotopes (Cu-64, Zr-89, Tc-95m, and Ho-163) with approved DOT 7A boxes, with a much-improved FedEx shipping success compared to our previous steel drums. 4. Implemented broad range quantitative trace metal analysis, employing a new microwave plasma atomic emission spectrometer (Agilent 4200) capable of ppb sensitivity across the periodic table. This new instrument will prove essential in bringing our radiometals into FDA compliance needing CoA’s for translational research in clinical trials. 5. Expanded our capabilities in target fabrication, with the purchase of a programmable 1600 oC inert gas tube furnace for the smelting of binary alloy target materials. A similar effort makes use of our RF induction furnace, allowing small scale metallurgy with greater control. This alloy feedstock was then used to electroplate cyclotron targets with elevated melting temperatures capable of withstanding higher beam currents. 6. Finished the beam-line developments needed for the irradiation of low-melting target materials (Se and Ga) now being used for the production of Br-76, and radioactive germanium (68, 69, 71Ge). Our planned development of I-124 production has been deferred, given the wide access from commercial suppliers. The passing of these milestones has been the subject of the previous quarterly reports. These signature accomplishments were made possible by the DOE support, and have strengthened the infrastructure at the University of Wisconsin, provided the training ground for a very talented graduate research assistant (Mr. Valdovinos) and more than doubled our out-shipments of Cu-64 and Zr-89.

  3. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  4. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  5. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  6. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  7. File:USDA-CE-Production-GIFmaps-WI.pdf | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump to:ar-80m.pdf Jump to:Originalfaq.pdfFinal.pdfNM.pdf JumpSD.pdfWI.pdf

  8. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  9. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  10. EERE PROJECT MANAGEMENT CENTER Nl!PA DETl!R}.JINATION

    Broader source: Energy.gov (indexed) [DOE]

    RECIPIENT:State of Wisconsin * Office of Energy Independence PROJECf TITLE: WI Biodiesel Blending Program Page 1 of2 STATE: WI Funding Opportunity Announttmenf Number...

  11. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  12. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  13. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  14. Proceedings of the American Solar Energy Society Solar 2000 Conference. 2000. Madison, WI (June): 81-85

    E-Print Network [OSTI]

    Delaware, University of

    Proceedings of the American Solar Energy Society Solar 2000 Conference. 2000. Madison, WI (June, Kyung-Jin Boo, Young-Doo Wang and Gerard Alleng Center for Energy and Environmental Policy University and Environmental Policy (CEEP), working with affiliated academic and research institutions in the U.S. and East

  15. Analysis, Modification, and Implementation (AMI) of Scheduling Algorithm for the IEEE 802.116e (Mobile WiMAX)

    E-Print Network [OSTI]

    Ravichandiran, C; Vaidhyanathan, V

    2010-01-01T23:59:59.000Z

    Mobile WiMAX (Worldwide Interoperability for Microwave Access) is being touted as the most promising and potential broadband wireless technology. And the popularity rate has been surging to newer heights as the knowledge-backed service era unfolds steadily. Especially Mobile WiMAX is being projected as a real and strategic boon for developing counties such as India due to its wireless coverage acreage is phenomenally high. Mobile WiMAX has spurred tremendous interest from operators seeking to deploy high-performance yet cost-effective broadband wireless networks. The IEEE 802.16e standard based Mobile WiMAX system will be investigated for the purpose of Quality of Service provisioning. As a technical challenge, radio resource management will be primarily considered and main is the costly spectrum and the increasingly more demanding applications with ever growing number of subscribers. It is necessary to provide Quality of Service (QoS) guaranteed with different characteristics. As a possible solution the sche...

  16. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  17. Towards a temporal network analysis of interactive WiFi users

    E-Print Network [OSTI]

    Zhang, Yan; Zhang, Yi-Qing; Li, Xiang; 10.1209/0295-5075/98/68002

    2012-01-01T23:59:59.000Z

    Complex networks are used to depict topological features of complex systems. The structure of a network characterizes the interactions among elements of the system, and facilitates the study of many dynamical processes taking place on it. In previous investigations, the topological infrastructure underlying dynamical systems is simplified as a static and invariable skeleton. However, this assumption cannot cover the temporal features of many time-evolution networks, whose components are evolving and mutating. In this letter, utilizing the log data of WiFi users in a Chinese university campus, we infuse the temporal dimension into the construction of dynamical human contact network. By quantitative comparison with the traditional aggregation approach, we find that the temporal contact network differs in many features, e.g., the reachability, the path length distribution. We conclude that the correlation between temporal path length and duration is not only determined by their definitions, but also influenced b...

  18. An evaluation of product formulas as an alternative to the Minnesota-Wisconsin price series

    E-Print Network [OSTI]

    Keough, Mary J

    1990-01-01T23:59:59.000Z

    (Chair of Committee) William S. Neilson (Member) David A. Bessler (Member) A. Gene Nelson (Head of Department) December 1990 ABSTRACT An Evaluation of Product Formulas as an Alternative to the Minnesota-Wisconsin Price Series. (December 1990... BEHAVIOR OF THE MINNESOTA-WISCONSIN PRICE SERIES 10 10 11 14 14 15 16 17 20 26 The 1970s The 1980s 28 37 PRODUCf FORMUIAS AS AN ALTERNATIVE TO THE M-W PRICE SERIES . 51 Product Price Formulas Consequences of Product Price Formulas Product...

  19. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  20. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  1. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  2. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  3. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  4. Madison, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Madison, WI, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  5. Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Milwaukee, WI, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  6. A model specification for fiber reinforced non-participating permanent formwork panels for concrete bridge deck construction

    E-Print Network [OSTI]

    Bank, Lawrence C.

    a , Arnon Bentur b , Aviad Shapira b a University of Wisconsin-Madison, 1415 Engineering Dr, Madison, WI

  7. Inferring Regulatory Networks from Time Series Expression Data and Relational Data via

    E-Print Network [OSTI]

    Page Jr., C. David

    , University of Wisconsin ­ Madison, WI 53706 USA 4 COPPE/Sistemas, UFRJ Centro de Tecnologia, Bloco H-319, Cx

  8. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  9. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  10. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  11. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  12. THE UNIVERSITY OF WISCONSIN-MILWAUKEE FACILITIES AND ADMINISTRATIVE (INDIRECT) COSTS POLICY

    E-Print Network [OSTI]

    Saldin, Dilano

    THE UNIVERSITY OF WISCONSIN-MILWAUKEE FACILITIES AND ADMINISTRATIVE (INDIRECT) COSTS POLICY Facilities and Administrative (Indirect) costs are real costs that provide reimbursement for actual or contract. The costs result from shared services such as libraries, plant operation and maintenance, utility

  13. EA-1862: Oneida Seven Generation Corporation Waste-To-Energy System, Ashwaubenon, Wisconsin

    Broader source: Energy.gov [DOE]

    Oneida’s Energy Recovery Project would construct and operate a solid waste-to-electricity power plant on vacant property within the Bayport Industrial Center in the City of Green Bay, Brown County, Wisconsin. This energy recovery process would involve bringing municipal solid waste into the plant for sizing (shredding), sorting (removing recyclable material), and conveying into one of three pyrolytic gasification systems.

  14. Karsten Heeger, Univ. of Wisconsin UW undergraduate colloquium, February 27, 2013 Recent Discoveries in Neutrino Physics

    E-Print Network [OSTI]

    Saffman, Mark

    Discoveries in Neutrino Physics Experiments with Reactor Antineutrinos Karsten Heeger http://neutrino.physics violation? Where did all the antimatter go? The Big Questions in Neutrino Physics #12;Karsten Heeger, Univ, July 13, 2009 Standard Model and Particle Physics #12;Karsten Heeger, Univ. of Wisconsin UW

  15. ADVANCING A HEALTHIER WISCONSIN ENDOWMENT: RESEARCH AND EDUCATION PROGRAM Pancreatic Cancer Research Program

    E-Print Network [OSTI]

    cancer biology suggest that a single treatment approach for this heterogeneous and biologically complex cancer is not ideal. In the future, the best treatments may be determined by the molecular determinantsADVANCING A HEALTHIER WISCONSIN ENDOWMENT: RESEARCH AND EDUCATION PROGRAM Pancreatic Cancer

  16. UNIVERSITY OF WISCONSIN-MADISON COLLEGE OF ENGINEERING VOL. 33, NO. 2 WINTER 2007

    E-Print Network [OSTI]

    Sheridan, Jennifer

    of Wisconsin Energy Institute is leveraging several renowned UW-Madison energy education and research programs two decades has provided forums for discussion and debate of public policy issues in the electricity government, industry and the public," says Meier. "Education is vital to raising awareness about the issues

  17. University of Wisconsin Madison Enterprise IT Decision Making Future State Team

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    1 of 3 University of Wisconsin ­ Madison Enterprise IT Decision Making ­ Future State Team Charter Document June 28, 2012 Approved June 28, 2012 (v6.1) Team Name Enterprise IT Decision Making ­ Future State business case for the implementation of a selected model. Team members will be responsible for developing

  18. EMERITUS PROFESSOR THEODORE D. TIEMANN Emeritus Professor and University of Wisconsin

    E-Print Network [OSTI]

    Evans, Paul G.

    , 1907. At age 5 he moved to Madison, Wisconsin with his parents. His father, Dr. Harry Tiemann, a timber with several mineral products companies, Professor Tiemann entered the military service in 1942 as a U.S. Army in 1946. He then entered the employment of the Reynolds Metal Company, where he became Manager

  19. ADVANCE Program Site Visit Report The University of Wisconsin at Madison

    E-Print Network [OSTI]

    Sheridan, Jennifer

    - 1 - 1/25/2006 ADVANCE Program Site Visit Report The University of Wisconsin at Madison November 7 institutional change at a major research university with few women faculty in the science and engineering in the College of Engineering, Agricultural and Life Sciences, Letters and Sciences, Schools of Medicine

  20. New Wave of the Wisconsin Longitudinal Study Looks at Aging "Happy Days" Cohort

    E-Print Network [OSTI]

    Sheridan, Jennifer

    -94. The latest stage of the project begins with surveys in 2003 of surviv- ing WLS graduates and randomly graduation of the "Happy Days" cohort of 1957. Across the decades, the Wisconsin Longitudinal Study has. William H. Sewell, the WLS founding investigator, led "the project" through the initial post-card followup

  1. 1225 Observatory Drive, Madison, Wisconsin 53706 608-262-3581 / www.lafollette.wisc.edu

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    ://www.lafollette.wisc.edu/publications/workingpapers U.S. Health Care Reform: A Primer and an Assessment Robert Haveman La Follette School of Public at the University of Wisconsin-Madison August 19, 2010 #12;1 US Health Care Reform: A Primer and an Assessment presidents and numerous Senators and Congressional Representatives, a comprehensive health care reform bill

  2. John A. Luczaj $ Department of Natural and Applied Sciences, University of Wisconsin

    E-Print Network [OSTI]

    Luczaj, John A.

    refine the ideas presented in the author's doctoral dissertation, from which the bulk of this ma- terial and valuable criticisms that im- proved this manuscript. Evidence against the Dorag (mixing-zone) model carbonates near the Wisconsin arch represent the type locality in ancient rocks for the Dorag, or mixing

  3. 2228 Engineering Hall 1415 Engineering Drive Madison, Wisconsin 53706-1607 USA

    E-Print Network [OSTI]

    Sheridan, Jennifer

    2228 Engineering Hall 1415 Engineering Drive Madison, Wisconsin 53706-1607 USA Phone: +1 (608) 262 Department of Civil and Environmental Engineering New Jersey Institute of Technology Friday, 16 March 2012 9:30 AM in Room 2321 Engineering Hall Me, Myself and I ­ a woman in engineering (life overview) with Q

  4. 09/22/2004 University of Wisconsin-Madison 1 ENERGY, POLITICS AND

    E-Print Network [OSTI]

    09/22/2004 University of Wisconsin-Madison 1 ENERGY, POLITICS AND SPACE Harrison H. Schmitt TOFE BILLION EARTHLINGS BY 2050 · >X8 INCREASE IN ENERGY DEMAND ­ X2 TO STAY EVEN WITH 2000 DEMAND ­ X4 OR MORE TO MEET ASPIRATIONS AND SLOW POPULATION GROWTH (NOTE CHINA!) ­ X? TO MITIGATE CLIMATE CHANGE · HOW

  5. BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee

    E-Print Network [OSTI]

    Saldin, Dilano

    BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee Global Management Track (revised 2-10-2014) The Global Management track, focusing on the impact of globalization on business and the world economy, will prepare students as future managers capable of analyzing transnational issues

  6. BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee

    E-Print Network [OSTI]

    Saldin, Dilano

    1 of 3 BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee Global Management Track (revised 2/29/12) The Global Management track, focusing on the impact of globalization on business and the world economy, will prepare students as future managers capable of analyzing transnational issues

  7. BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee

    E-Print Network [OSTI]

    Saldin, Dilano

    1 of 3 BACHELOR OF ARTS IN GLOBAL STUDIES University of Wisconsin-Milwaukee Global Management Track (revised 5/18/09) The Global Management track, focusing on the impact of globalization on business and the world economy, will prepare students as future managers capable of analyzing transnational issues

  8. Annual Report of ADVANCE Program for University of Wisconsin-Madison

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Annual Report of ADVANCE Program for University of Wisconsin-Madison 2006 Principals, University year of the ADVANCE funding) were to complete the evaluation of our institutional change efforts, and to find the funding and support necessary to keep WISELI and its work alive beyond the ADVANCE grant funds

  9. Edward Noble Kramer was born April 17, 1908 in Cambridge, Wisconsin

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    of the disciplines of chemistry, chemical engineering and materials science and engineering without regard. DE PA RT M E N T O F Materials Science & Engineering College of Engineering University of Wisconsin of Engineering and Applied Sciences Harvard University The Edward Noble Kramer Lectureship Tuesday, September 10

  10. UNIVERSITY OF WISCONSIN SCHOOL OF MEDICINE AND PUBLIC HEALTH PHS 915--INTERNATIONAL HEALTH SYSTEMS AND POLICY

    E-Print Network [OSTI]

    Scharer, John E.

    of health care to population health outcomes 3. Identify a set of broad criteria to evaluate health system performance 4. Evaluate the current performance of the U.S. health care system in comparison to other nationalUNIVERSITY OF WISCONSIN SCHOOL OF MEDICINE AND PUBLIC HEALTH PHS 915--INTERNATIONAL HEALTH SYSTEMS

  11. Introduction As part of the LAKE-ICE experiment the University of Wisconsin Volume

    E-Print Network [OSTI]

    Eloranta, Edwin W.

    Introduction As part of the LAKE-ICE experiment the University of Wisconsin Volume Imaging Lidar (VIL) observed a land-breeze circulation along the western shore of Lake Michigan. During the classic structure of a density current along with gravity waves forced by the front. The University

  12. DARS Authorization 2011 The Board of Regents of the University of Wisconsin System

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    DARS Authorization © 2011 The Board of Regents of the University of Wisconsin System All Rights Reserved Please type all information. Send or Fax completed form to: DARS Coordinator 333 East Campus Mall specify Job Title: Department/Office: Office Phone: Office Address: UDDS Code: Email DARS capability: Yes

  13. Climate Change at the University of Wisconsin-Madison: What changed,

    E-Print Network [OSTI]

    Sheridan, Jennifer

    #12;Climate Change at the University of Wisconsin-Madison: What changed, and did ADVANCE have. The climate for women in my department is good * Women Faculty Men Faculty Dept. Chairs * #12;Climate CHANGE climate indicates movement along stages of change contemplation, preparation and even action stage #12

  14. University of Wisconsin-Madison July 2001 Staff Paper No. 443

    E-Print Network [OSTI]

    Radeloff, Volker C.

    University of Wisconsin-Madison July 2001 Staff Paper No. 443 Is Industrial Hemp Worth Further. #12;Is Industrial Hemp Worth Further Study in the US? A Survey of the Literature T. Randall Fortenbery..............................................................................................3 II. A Brief History of Industrial Hemp

  15. Creating Jobs through Energy Efficiency Using Wisconsin's Successful Focus on Energy Program

    SciTech Connect (OSTI)

    Akhtar, Masood; Corrigan, Edward; Reitter, Thomas

    2012-03-30T23:59:59.000Z

    The purpose of this project was to provide administrative and technical support for the completion of energy efficiency projects that reduce energy intensity and create or save Wisconsin industrial jobs. All projects have been completed. Details in the attached reports include project management, job development, and energy savings for each project.

  16. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  17. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  18. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  19. COMPASS Guide -Center for Urban Initiatives and Research, UWM -PO Box 413, Milwaukee, WI 53201 (414) 229-6453 www.compassguide.org

    E-Print Network [OSTI]

    Saldin, Dilano

    COMPASS Guide - Center for Urban Initiatives and Research, UWM - PO Box 413, Milwaukee, WI 53201 of a College of Arts and Sciences, College of #12;COMPASS Guide - Center for Urban Initiatives and Research

  20. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  1. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  2. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  3. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  4. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  5. Published in Conference Proceedings of THE AMERICAN SOLAR ENERGY SOCIETY (ASES) MADISON, WISCONSIN, USA, JUNE 16-21, 2000

    E-Print Network [OSTI]

    Jacobson, Arne

    Published in Conference Proceedings of THE AMERICAN SOLAR ENERGY SOCIETY (ASES) MADISON, WISCONSIN take 15 to 25 seconds each, #12;Published in Conference Proceedings of THE AMERICAN SOLAR ENERGY

  6. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  7. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  8. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  9. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  10. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  11. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  12. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  13. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  14. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  15. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  16. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  17. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  18. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  19. Correspondence to: Christos T. Maravelias, Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Chemical and Biological Engineering, 1415 Engineering Dr., Madison, WI 53706, USA. E-mail: maravelias@wisc.edu

    E-Print Network [OSTI]

    Raines, Ronald T.

    of biomass feedstocks with higher sugar yields. In this study, we first develop and then evaluate an IL

  20. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  1. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  2. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  3. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  4. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  5. Legal obstacles and incentives to the development of small scale hydroelectric potential in Wisconsin

    SciTech Connect (OSTI)

    None,

    1980-05-01T23:59:59.000Z

    The legal and institutional obstacles to the development of small-scale hydroelectric energy at the state level are discussed. The Federal government also exercises extensive regulatory in the area, and the dual regulatory system from the standpoint of the appropriate legal doctrine, the law of pre-emption, application of the law to the case of hydroelectric development, and an inquiry into the practical use of the doctrine by the FERC is examined. The initial obstacle that all developers confront in Wisconsin is obtaining the authority to utilize the bed, banks, and flowing water at a proposed dam site. This involves a determination of ownership of the stream banks and bed and the manner of obtaining either their title or use; and existing constraints with regard to the use of the water. Wisconsin follows the riparian theory of water law.

  6. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  7. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  8. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  9. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  10. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  11. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  12. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  13. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  14. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  15. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  16. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  17. 1D-8 Duo-Binary Circular Turbo Decoder Based on Border Metric Encoding for WiMAX

    E-Print Network [OSTI]

    Ji-hoon Kim; In-cheol Park

    Abstract- This paper presents a duo-binary circular turbo decoder based on border metric encoding. With the proposed method, the memory size for branch memory is reduced by half and the dummy calculation is removed at the cost of the small-sized memory which holds the encoded border metrics. Based on the proposed SISO decoder and the dedicated hardware interleaver, a duo-binary circular turbo decoder is designed for the WiMAX standard using a 0.13 ?m CMOS process, which can support 24.26 Mbps at 200MHz. I.

  18. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  19. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  20. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  1. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  2. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  3. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  4. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  5. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  6. Atmospheric Emitted Radiance Interferometer (AERI) Archived Data at the University of Wisconsin Space Science and Engineering Center (SSEC)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The AERI instrument is an advanced version of the high spectral resolution interferometer sounder (HIS) designed and fabricated at the University of Wisconsin (Revercomb et al. 1988) to measure upwelling infrared radiances from an aircraft. The AERI is a fully automated ground-based passive infrared interferometer that measures downwelling atmospheric radiance from 3.3 - 18.2 mm (550 - 3000 cm-1) at less than 10-minute temporal resolution with a spectral resolution of one wavenumber. It has been used in DOEÆs Atmospheric Radiation Measurement (ARM) program. Much of the data available here at the Cooperative Institute for Meteorological Satellite Studies (CIMSS), an institute within the University of Wisconsin’s Space Science and Engineering Center, may also be available in the ARM Archive. On this website, data and images from six different field experiments are available, along with AERIPLUS realtime data for the Madison, Wisconsin location. Realtime data includes temperature and water vapor time-height cross sections, SKEWT diagrams, convective stability indices, and displays from a rooftop Lidar instrument. The field experiments took place in Oaklahoma and Wisconsin with the AERI prototype.

  7. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  8. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  9. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  10. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  11. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  12. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  13. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  14. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  15. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  16. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  17. Sowing the Seeds for a Bountiful Harvest: Shaping the Rules and Creating the Tools for Wisconsin's Next Generation of Wind Farms

    SciTech Connect (OSTI)

    Vickerman, Michael Jay

    2012-03-29T23:59:59.000Z

    Project objectives are twofold: (1) to engage wind industry stakeholders to participate in formulating uniform permitting standards applicable to commercial wind energy installations; and (2) to create and maintain an online Wisconsin Wind Information Center to enable policymakers and the public to increaser their knowledge of and support for wind generation in Wisconsin.

  18. Multipole and tokamak research at the University of Wisconsin This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Sprott, Julien Clinton

    Multipole and tokamak research at the University of Wisconsin This article has been downloaded from to the journal homepage for more Home Search Collections Journals About Contact us My IOPscience #12;MULTIPOLE, Wisconsin, United States of America ABSTRACT. A historical survey is given of the experimental multipole

  19. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  20. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  1. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  2. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  3. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  4. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  5. Effect of RF Gradient upon the Performance of the Wisconsin SRF Electron Gun

    SciTech Connect (OSTI)

    Bosch, Robert [SRC U. Wisconsin-Madison; Legg, Robert A. [JLAB

    2013-12-01T23:59:59.000Z

    The performance of the Wisconsin 200-MHz SRF electron gun is simulated for several values of the RF gradient. Bunches with charge of 200 pC are modeled for the case where emittance compensation is completed during post-acceleration to 85 MeV in a TESLA module. We first perform simulations in which the initial bunch radius is optimal for the design gradient of 41 MV/m. We then optimize the radius as a function of RF gradient to improve the performance for low gradients.

  6. Acute effect of indoor exposure to paint containing bis(tributyltin) oxide--Wisconsin, 1991

    SciTech Connect (OSTI)

    Not Available

    1991-05-03T23:59:59.000Z

    In January 1991, a woman in Wisconsin contacted her local public health department to report that she and her two children had become ill after her landlord painted the walls and ceilings of two rooms of her apartment. Reported symptoms included a burning sensation in the nose and forehead, headache, nose bleed, cough, loss of appetite, nausea, and vomiting. The woman, who was in the third trimester of pregnancy, also complained of a persistent odor from the paint and provided an empty bottle of a paint additive used for mildew control. The label indicated that this product contained 25% bis(tributyltin) oxide (TBTO) as its only active ingredient.

  7. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  8. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  9. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  10. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  11. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  12. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  13. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  15. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  16. Supplemental Information for "Regional to global assessments of phytoplankton dynamics from the SeaWiFS mission" by D.A. Siegel and others.

    E-Print Network [OSTI]

    Siegel, David A.

    . This water-leaving radiance, Lw(), is solar radiation that penetrated the ocean surface, interacted the SeaWiFS mission" by D.A. Siegel and others. Satellite Ocean Color Data Processing: Ocean color sensors are designed to measure the spectral distribution of visible radiation upwelling from beneath the ocean surface

  17. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  18. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  19. Atmospheric Data, Images, and Animations from Lidar Instruments used by the University of Wisconsin Lidar Group

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The Space Science and Engineering Center is a research and development center affiliated with the University of Wisconsin-Madison’s Graduate School. Its primary focus is on geophysical research and technology to enhance understanding of the atmosphere of Earth, the other planets in the Solar System, and the cosmos. SSEC develops new observing tools for spacecraft, aircraft, and ground-based platforms, and models atmospheric phenomena. The Center receives, manages and distributes huge amounts of geophysical data and develops software to visualize and manipulate these data for use by researchers and operational meteorologists all over the world.[Taken from About SSEC at http://www.ssec.wisc.edu/overview/] A huge collection of data products, images, and animations comes to the SSEC from the University of Wisconsin Lidar Group. Contents of this collection include: • An archive of thousands of Lidar images acquired before 2004 • Arctic HSRL, MMCR, PAERI, MWR, Radiosonde, and CRAS forecast data Data after May 1, 2004 • MPEG animations and Lidar Multiple Scattering Models

  20. Replacement of Lighting Fixtures with LED Energy Efficient Lights at the Parking Facility, Milwaukee, Wisconsin

    SciTech Connect (OSTI)

    David Brien

    2012-06-21T23:59:59.000Z

    The Forest County Potawatomi Community (FCPC or Tribe) owns a six-story parking facility adjacent to its Potawatomi Bingo Casino (the Casino) in Milwaukee, Wisconsin, as well as a valet parking facility under the Casino (collectively, the Parking Facility). The Parking Facility contained 205-watt metal halide-type lights that, for security reasons, operated 24 hours per day, 7 days per week. Starting on August 30, 2010, the Tribe replaced these fixtures with 1,760 state-of-the-art, energy efficient 55-Watt LED lights. This project resulted in an immediate average reduction in monthly peak demand of 238 kW over the fourth quarter of 2010. The average reduction in monthly peak demand from October 1 through December 31, 2010 translates into a forecast annual electrical energy reduction of approximately 1,995,000 kWh or 47.3% of the pre-project demand. This project was technically effective, economically feasible, and beneficial to the public not only in terms of long term energy efficiency and associated emissions reductions, but also in the short-term jobs provided for the S.E. Wisconsin region. The project was implemented, from approval by U.S. Department of Energy (DOE) to completion, in less than 6 months. The project utilized off-the-shelf proven technologies that were fabricated locally and installed by local trade contractors.

  1. Reproduction and distribution of fishes in a cooling lake: Wisconsin power plant impact study

    SciTech Connect (OSTI)

    Rondorf, D.W.; Kitchell, J.F.

    1985-06-01T23:59:59.000Z

    Spatial and temporal patterns during reproduction and early-life history of fishes were studied in a manmade cooling lake. Lake Columbia, impounded in 1974, near Portage, Wisconsin, has an area of 190 ha, a mean depth of 2.1 m, and a 15C temperature gradient derived from the thermal effluent of a 527-MW fossil-fueled generating station that began operating in 1975. The lake was initially colonized by fishes when filled with Wisconsin River water. Observations suggest a decline of species diversity of the fish community due to direct action of upper lethal temperatures, absence of colonization by warm-water, lake-dwelling species, and lack of recruitment for certain species. Spatial and temporal patterns of spawning of black crappie were altered by a rapid rise in water temperatures following plant startup after a three-week shutdown. Elevated temperatures subsequently shortened the spawning season, induced resorption of ova, and caused loss of secondary sexual characteristics. After initially drifting with water current, juvenile stages of sunfish and gizzard shad responded to changes in the thermal gradient by horizontal and vertical shifts in abundance.

  2. 771 DHS 175.03DEPARTMENT OF HEALTH SERVICES The Wisconsin Administrative Code on this web site is current through the last published Wisconsin Register. See also Are the Codes on this

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    771 DHS 175.03DEPARTMENT OF HEALTH SERVICES The Wisconsin Administrative Code on this web site.09 Appeals of actions by the department. DHS 175.10 Appeals of actions by agent health departments. DHS 175.17 Buildings and grounds. DHS 175.18 Safety and supervision. DHS 175.19 Health. DHS 175.20 Register. DHS 175

  3. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  4. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  5. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  6. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  7. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  8. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  9. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  10. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  11. Dept. of Sol Science, UW-Madison/UW-Extension, 1525 Observatory Dr., Madison, WI 53706/608-262-0485 November 2010 Issue #2 2010

    E-Print Network [OSTI]

    Balser, Teri C.

    /608-262-0485 ____________________________________________________________________________________ November 2010 Issue #2 2010 Using Flue Gas Desulfurization (FGD) Gypsum in Wisconsin Dick Wolkowski, Birl plants burn low S coal and some have installed flue gas scrubbers to reduce sulfur emissions. Use of a wet scrubber results in the byproduct flue gas desulfurization (FGD) gypsum. FGD gypsum is created

  12. Dept. of Soil Science, UW-Madison/UW-Extension, 1525 Observatory Dr., Madison, WI 53706/608-262-0485 November 2010 Issue #1 2010

    E-Print Network [OSTI]

    Balser, Teri C.

    /608-262-0485 _____________________________________________________________________________ November 2010 Issue #1 ­ 2010 Land Applying Municipal Biosolids in Wisconsin Richard P. Wolkowski and Fred Hegeman 1/ Introduction Municipal biosolids are the product of the treatment of domestic wastewater. There are three methods for handling biosolids, which include land-filling, incineration, and land application

  13. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  14. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  15. Postdoctoral Position Available October 1, 2014 The Center for Demography of Health and Aging (CDHA) at the University of Wisconsin-

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Postdoctoral Position Available October 1, 2014 The Center for Demography of Health and Aging (CDHA) at the University of Wisconsin- Madison invites applications for a postdoctoral fellowship in the demography of aging and the life course, funded by the National Institute on Aging. The NIA postdoctoral fellowship

  16. The Dynamics of Agricultural Biotechnology Adoption: Lessons from rBST use in Wisconsin, 1994-2001

    E-Print Network [OSTI]

    Foltz, Jeremy D.

    The Dynamics of Agricultural Biotechnology Adoption: Lessons from rBST use in Wisconsin, 1994 to examine the dynamics of rBST adoption and in the process to identify the characteristics that distinguish as a dynamic process (Griliches; Mansfield) because of the learning, coordination, and investment issues

  17. An Invitation to See the Light une 2003J The Synchrotron Radiation Center University of Wisconsin-Madison

    E-Print Network [OSTI]

    Evans, Cherice M.

    superconductors and magnetic nanostructures. It is also used to produce cutting-edge semiconductor devices by x Terminology Used at the SRC 7 Storage Ring Operational Parameters 8 Schematic Layout of the Aladdin Storage-Madison and the Wisconsin Alumni Research Foundation. Time on the storage ring is made available free of charge

  18. COMPUTER/NETWORK SUPPORT ASSISTANT The University Wisconsin -Milwaukee School of Continuing Education is seeking a qualified

    E-Print Network [OSTI]

    Saldin, Dilano

    Education is seeking a qualified student to assist with Network Administration and Computer Support Building at 161 W. Wisconsin Ave., in downtown Milwaukee. Job Description Assist Network Administrator and availability to: scetech@uwm.edu Network Administration and Computer Support School of Continuing Education

  19. The 74-year water level record for Anvil Lake, a northern Wis-consin seepage lake, demonstrates pronounced, recurring highs

    E-Print Network [OSTI]

    Sheridan, Jennifer

    The 74-year water level record for Anvil Lake, a northern Wis- consin seepage lake, demonstrates impacts on Wisconsin's water resources Carolyn Rumery Betz1 , Tim Asplund2 , and jim Hurley1 1 University Impacts, a copy of the full Water Resources Working Group report, and a PDF of this poster, go to wicci

  20. John A. Luczaj $ Department of Natural and Ap-plied Sciences, University of WisconsinGreen Bay,

    E-Print Network [OSTI]

    Luczaj, John A.

    earned his B.S. degree in geology from the University of Wisconsin­Oshkosh. This was followed by an M.S. degree in geology from the University of Kansas. He holds a Ph.D. in geology from Johns Hopkins Uni of Ordovician and Silurian carbonates in the central United States, oil and gas resources of the Michigan Basin

  1. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  2. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  3. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  4. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  5. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  6. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  7. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  8. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  9. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  10. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  11. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  12. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  13. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  14. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  15. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  16. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  17. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  18. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  19. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  20. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  1. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  2. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  3. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  4. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  5. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  6. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  7. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  8. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  9. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  10. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  11. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  12. Health Hazard Evaluation Report HETA 84-239-1586, Ashland Super Valu, Ashland, Wisconsin

    SciTech Connect (OSTI)

    Daniels, W.J.; Donohue, M.T.; Singal, M.

    1985-05-01T23:59:59.000Z

    Environmental and brathing zone samples were analyzed for di(2-ethylhexyl)adipate, hydrogen-chloride, cyclohexanol, dicyclohexyl-phthalate, phthalic-anhydride, and total particulates at Ashland Super Valu, Ashland, Wisconsin in June, 1984. The evaluation was requested by a company representative due to complaints of respiratory problems by one of the meat department employees. Four meat department employees were interviewed. The authors conclude that it is not possible to determine whether or not the symptoms reported by the meat packer are due to emissions from heated meat wrap or label adhesive. Recommendations included not operating the cool rod cutter at a temperature above 280 degrees-F and installing local exhaust ventilation.

  13. Element flow in aquatic systems surrounding coal-fired power plants. Wisconsin power plant impact study

    SciTech Connect (OSTI)

    Andren, A.; Anderson, M.; Loux, N.; Talbot, R.

    1980-07-01T23:59:59.000Z

    Water quality parameters of a 192-ha (480-acre) cooling pond adjacent to the Columbia Generating Station, Portage, Wisconsin, have been investigated. Analyses were made for major and minor elements, nutrients, pH, alkalinity, O2, chlorogranics, phenols, and polyaromatic hydrocarbons. Similar parameters were also measured in the nearby fly ash discharge basin and its associated drainage stream. Laboratory dissolution and precipitation studies of fly ash were performed in an effort to understand the chemistry of the discharged ash water and its potential effects on receiving waters. Mass balance calculations were made and are presented to ascertain whether the cooling pond acts as an efficient sink for inorganic and organic compounds, and if so, what the fate of these compounds is.

  14. Waste energy: Feasibility study for Portage County and the University of Wisconsin, Stevens Point

    SciTech Connect (OSTI)

    Abubakr, S.

    1988-12-31T23:59:59.000Z

    Concerning solid waste management, Portage County is in a better condition than the many other counties that are currently facing a solid waste disposal crisis. The landfill serving Portage County is relatively new and environmentally safe and has a life expectancy of about 15 more years. A waste-to-energy facility would effectively extend that life two to three times while at the same time reduce the cost of disposing the solid waste. Waupaca County does not have a landfill. This preliminary feasibility study will analyze the possibility of constructing a waste-to-energy facility in Portage County with the University of Wisconsin-Stevens Point serving as the major market for the recovered energy. 57 refs., 23 figs., 23 tabs.

  15. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  16. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  17. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  18. Economic and Conservation Evaluation of Capital Renovation Projects: Hidalgo County Irrigation District No. 2 (San Juan) - 48" Pipeline Replacing Wisconsin Canal - Final 

    E-Print Network [OSTI]

    Rister, Edward; Lacewell, Ronald; Sturdivant, Allen; Robinson, John; Popp, Michael

    2003-01-01T23:59:59.000Z

    Development Bank (NADBank) and Bureau of Reclamation. The proposed project involves constructing a 48" pipeline to replace the “Wisconsin Canal.” Both nominal and real estimates of water and energy savings and expected economic and financial costs of those...

  19. Economic and Conservation Evaluation of Capital Renovation Projects: Hidalgo County Irrigation District No. 2 (San Juan) – 48" Pipeline Replacing Wisconsin Canal – Preliminary 

    E-Print Network [OSTI]

    Rister, M. Edward; Lacewell, Ronald D.; Sturdivant, Allen W.; Robinson, John R.C.; Popp, Michael C.

    2003-01-01T23:59:59.000Z

    Development Bank (NADBank) and Bureau of Reclamation. The proposed project involves constructing a 48" pipeline to replace the “Wisconsin Canal.” Both nominal and real estimates of water and energy savings and expected economic and financial costs of those...

  20. Economic and Conservation Evaluation of Capital Renovation Projects: Hidalgo County Irrigation District No. 2 (San Juan) - 48" Pipeline Replacing Wisconsin Canal - Final

    E-Print Network [OSTI]

    Rister, Edward; Lacewell, Ronald; Sturdivant, Allen; Robinson, John; Popp, Michael

    Development Bank (NADBank) and Bureau of Reclamation. The proposed project involves constructing a 48" pipeline to replace the “Wisconsin Canal.” Both nominal and real estimates of water and energy savings and expected economic and financial costs of those...

  1. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  2. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  3. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  4. Looking past the first year: Do the savings last?. A study of the persistence of energy savings in low-income Wisconsin residences, final report

    SciTech Connect (OSTI)

    Narum, D.; Pigg, S.; Schlegel, J.

    1992-09-01T23:59:59.000Z

    Wisconsin Energy Conservation Corporation (WECC) conducted a Study of the Persistence of Energy Savings in Low-Income Wisconsin Residences for the Department of Energy`s (DOE) Existing Buildings Efficiency Program. The study assessed the persistence of energy savings resulting from participation in the Wisconsin Utility Weatherization Assistance Program (UWAP). The study assessed the impact of weatherization and heating system measures up to eight years after the installation of energy conservation measures (ECMS) in low-income, gas-heated residences, the majority of which are 1- and 2-unit buildings. Primary data for the study came from two utilities, Wisconsin Gas Company and Madison Gas & Electric Company. Both utilities provided WECC with their weatherization program databases, which contained participant information back to 1982. WECC also obtained fuel consumption information for the program participants from each utility. The consumption histories spanned a 6-year period from March 1985 through May 1991 for Wisconsin Gas Company participants, and a 5-year period from October 1986 through August 1991 for Madison Gas & Electric Company participants. After attrition, the study included 5,129 customers from the Wisconsin Gas Company program and 1,553 customers from the Madison Gas & Electric Company program.

  5. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  6. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  7. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  11. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  12. Thermomechanical room and canister region benchmark analyses between STEALTH-WI and SPECTROM-32: Draft final report

    SciTech Connect (OSTI)

    Dial, B.W.; Maxwell, D.E.; Yee, G.

    1987-12-01T23:59:59.000Z

    This report documents the benchmarking of the two-dimensional waste isolation version of STEALTH (designated STEALTH-WI) against the thermomechanical performance assessment calculations performed by RE/SPEC using SPECTROM-32. An axisymmetric, canister-scale (very-near-field) analysis was performed to compute the peak stress exerted by the salt on the waste package. A plane strain, room-scale (near-field) analysis was also performed to predict disposal room roof-to-floor closure and the temperatures at key locations in the vicinity of the disposal room. Comparisons between the STEALTH and SPECTROM-32 results showed that the temperature predictions agreed to within 5/degree/C, peak canister stresses better than 10%, and the average roof-to-floor closures within 30%. The stress and displacement differences were attributed to differences in the treatment of plasticity in the constitutive laws for salt employed in STEALTH and SPECTROM-32. The temperature differences were due to minor differences in the thermal models employed in STEALTH and SPECTROM- 41, the thermal analysis code which supplies temperatures for SPECTROM-32. 9 refs., 21 figs., 6 tabs.

  13. Feasibility Study of Economics and Performance of Solar Photovoltaics at the Refuse Hideaway Landfill in Middleton, Wisconsin

    SciTech Connect (OSTI)

    Salasovich, J.; Mosey, G.

    2011-08-01T23:59:59.000Z

    This report presents the results of an assessment of the technical and economic feasibility of deploying a photovoltaics (PV) system on a brownfield site at the Refuse Hideaway Landfill in Middleton, Wisconsin. The site currently has a PV system in place and was assessed for further PV installations. The cost, performance, and site impacts of different PV options were estimated. The economics of the potential systems were analyzed using an electric rate of $0.1333/kWh and incentives offered by the State of Wisconsin and by the serving utility, Madison Gas and Electric. According to the site production calculations, the most cost-effective system in terms of return on investment is the thin-film fixed-tilt technology. The report recommends financing options that could assist in the implementation of such a system.

  14. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  15. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  18. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  19. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  20. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...