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Sample records for wheeler ge general

  1. General Electric in India GE | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  2. Thomas Wheeler | Department of Energy

    Energy Savers [EERE]

    Thomas Wheeler Thomas Wheeler Phone (202) 586-8481 Room 4F-033 E-mail thomas.wheeler@hq.doe.gov Description Departmental staffing budget; PMA scorecard; hiring metrics Last Name Wheeler First Name THomas Title Director, Workforce Analysis & Planning Division

  3. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  4. Bryan Wheeler | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bryan Wheeler About Us Bryan Wheeler - Intern, Office of Science Bryan Wheeler was an intern in the Energy Department's Office of Science in the summer of 2011. He is currently a student at Johns Hopkins University Most Recent Maximizing Potential of Diesel and Gasoline for a Cleaner, More Efficient Engine September 27

  5. Status of Wheeler Reservoir

    SciTech Connect (OSTI)

    Not Available

    1990-09-01

    This is one in a series of status reports prepared by the Tennessee Valley Authority (TVA) for those interested in the conditions of TVA reservoirs. This overview of Wheeler Reservoir summarizes reservoir purposes and operation, reservoir and watershed characteristics, reservoir uses and use impairments, and water quality and aquatic biological conditions. The information presented here is from the most recent reports, publications, and original data available. If no recent data were available, historical data were summarized. If data were completely lacking, environmental professionals with special knowledge of the resource were interviewed. 12 refs., 2 figs.

  6. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  7. PROJECT PROFILE: General Electric – GE Global Research

    Broader source: Energy.gov [DOE]

    GE Global Research and Southwest Research Institute will develop an optimal compression system for a modular supercritical carbon dioxide (sCO2) power block operation in highly transient CSP tower applications. Supercritical carbon dioxide can be used to replace steam in CSP applications and gets a much greater power output at a lower cost.

  8. Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility...

    Open Energy Info (EERE)

    Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility Facility Wheeler Hot...

  9. Mt Wheeler Power, Inc | Open Energy Information

    Open Energy Info (EERE)

    Power, Inc Jump to: navigation, search Name: Mt Wheeler Power, Inc Place: Nevada Phone Number: 1-775-289-8981 Website: mwpower.net Facebook: https:www.facebook.com...

  10. Joe Wheeler Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    Joe Wheeler Elec Member Corp Jump to: navigation, search Name: Joe Wheeler Elec Member Corp Place: Alabama Phone Number: (256) 552-2300 Website: www.jwemc.org Twitter: @jwemc...

  11. Mt Wheeler Power, Inc (Utah) | Open Energy Information

    Open Energy Info (EERE)

    Mt Wheeler Power, Inc (Utah) Jump to: navigation, search Name: Mt Wheeler Power, Inc Place: Utah Phone Number: 1 775-289-8981 Website: mwpower.net Facebook: https:...

  12. Wheeler, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wheeler, New York: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 42.4303485, -77.3324807 Show Map Loading map... "minzoom":false,"mappingserv...

  13. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers

    Broader source: Energy.gov [DOE]

    GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

  14. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Last week, I visited General Electric Company's (NYSE:GE) ... site and remains home to some of GE's brightest ... said the building alone carried a 150 million bill. ...

  15. Wheeler AFB, Hawaii: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler AFB is a census-designated place in Honolulu County, Hawaii.1 References US...

  16. Wheeler County, Nebraska: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Nebraska. Its FIPS County Code is 183. It is classified as...

  17. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  18. Wheeler County, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Oregon. Its FIPS County Code is 069. It is classified as ASHRAE...

  19. Wheeler County, Texas: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Texas. Its FIPS County Code is 483. It is classified as ASHRAE...

  20. Water resources review: Wheeler Reservoir, 1990

    SciTech Connect (OSTI)

    Wallus, R.; Cox, J.P.

    1990-09-01

    Protection and enhancement of water quality is essential for attaining the full complement of beneficial uses of TVA reservoirs. The responsibility for improving and protecting TVA reservoir water quality is shared by various federal, state, and local agencies, as well as the thousands of corporations and property owners whose individual decisions affect water quality. TVA's role in this shared responsibility includes collecting and evaluating water resources data, disseminating water resources information, and acting as a catalyst to bring together agencies and individuals that have a responsibility or vested interest in correcting problems that have been identified. This report is one in a series of status reports that will be prepared for each of TVA's reservoirs. The purpose of this status report is to provide an up-to-date overview of the characteristics and conditions of Wheeler Reservoir, including: reservoir purposes and operation; physical characteristics of the reservoir and the watershed; water quality conditions: aquatic biological conditions: designated, actual, and potential uses of the reservoir and impairments of those uses; ongoing or planned reservoir management activities. Information and data presented here are form the most recent reports, publications, and original data available. 21 refs., 8 figs., 29 tabs.

  1. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steam Turbine, Generator and Controls ... service for GE Wind Energy, general manager of controls and power electronics and ... Care Award by Consumer Health World, USA ...

  2. The Lakeland McIntosh Unit 4 demonstration project utilizing Foster Wheeler`s pressurized circulating fluidized-bed combustion technology

    SciTech Connect (OSTI)

    McClung, J.D.; Provol, S.J.; Morehead, H.T.; Dodd, A.M.

    1997-12-31

    The City of Lakeland, Florida, Foster Wheeler and the Westinghouse Electric Corporation have embarked on the demonstration of a Clean Coal Technology at the City of Lakeland`s McIntosh Power Station in lakeland, Polk County, Florida. The project will demonstrate the Pressurized Circulating Fluidized Bed Combustion (PCFB) technology developed by Foster Wheeler and Westinghouse. The Lakeland McIntosh Unit 4 Project is a nominal 170 MW power plant designed to burn a range of low- to high-sulfur coals. The combined cycle plant employs a Westinghouse 251B12 gas turbine engine in conjunction with a steam turbine operating in a 2400/1000/1000 steam cycle. The plant will demonstrate both the PCFB and topped PCFB combustion technologies. This paper provides a process description of the Foster Wheeler PCFB and Topped PCFB technologies and their application to the Lakeland McIntosh Unit 4 Project.

  3. John A. Wheeler, 1968 | U.S. DOE Office of Science (SC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    John A. Wheeler, 1968 The Enrico Fermi Award Fermi Award Home Nomination & Selection Guidelines Award Laureates 2010's 2000's 1990's 1980's 1970's 1960's 1950's Ceremony The Life of Enrico Fermi Contact Information The Enrico Fermi Award U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-2411 E: Email Us 1960's John A. Wheeler, 1968 Print Text Size: A A A FeedbackShare Page Citation For his pioneering contributions to understanding

  4. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  5. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general...

  6. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    how we work across supply chains. By... Read More What is the GE store? Mark Little, CTO & Head of Global Research at GE, describes what the GE Store means and why it's...

  7. GE Global Research Contact | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1800 Cai Lun Road, Zhangjiang High-Tech Park, Pudong, Shanghai, 201203, China Joey Yang +86 21 38773407 joey.yang@ge.com Communications and Public Relations GE Global...

  8. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  9. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  10. GE Capital Partnership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

  11. Ars Technica Visits GE's China Technology Center | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new ... Ars Technica visits GE's China Technology Center Ars Technica visited GE's China ...

  12. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  13. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  14. Advanced battery technology for electric two-wheelers in the people's Republic of China.

    SciTech Connect (OSTI)

    Patil, P. G.; Energy Systems

    2009-07-22

    This report focuses on lithium-ion (Li-ion) battery technology applications for two- and possibly three-wheeled vehicles. The author of this report visited the People's Republic of China (PRC or China) to assess the status of Li-ion battery technology there and to analyze Chinese policies, regulations, and incentives for using this technology and for using two- and three-wheeled vehicles. Another objective was to determine if the Li-ion batteries produced in China were available for benchmarking in the United States. The United States continues to lead the world in Li-ion technology research and development (R&D). Its strong R&D program is funded by the U.S. Department of Energy and other federal agencies, such as the National Institute of Standards and Technology and the U.S. Department of Defense. In Asia, too, developed countries like China, Korea, and Japan are commercializing and producing this technology. In China, more than 120 companies are involved in producing Li-ion batteries. There are more than 139 manufacturers of electric bicycles (also referred to as E-bicycles, electric bikes or E-bikes, and electric two-wheelers or ETWs in this report) and several hundred suppliers. Most E-bikes use lead acid batteries, but there is a push toward using Li-ion battery technology for two- and three-wheeled applications. Highlights and conclusions from this visit are provided in this report and summarized.

  15. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Store for Technology GE Global Research CS12005-02_GEstoreTechBook_R13.indd 1 3/10/15 8:45 AM Contents 2 Materials 5 Manufacturing 10 Industrial Internet 15 Energy CS12005-02_GEstoreTechBook_R13.indd 2 3/10/15 8:45 AM Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of nine technology centers, we have more than 3,600 of the world's best scientists and engineers driving advanced technologies for all of GE's industrial businesses. They are part

  16. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventio Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Continue to the experience En Bp China...

  17. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost ...

  18. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... It has helped GE win jet engine orders worth 100 billion - so far - from airlines looking to shave their huge fuel bills. In the future it is expected to be used in power plants ...

  19. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The open source platform GE scientists are developing will build on the successful platform they demonstrated with DARPA and MIT a few years ago and which has been recognized as an ...

  20. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ismail Sezal Ismail Sezal Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "The technology landscape is rapidly changing. We must always be learning and adapting to changes to stay ahead." -Ismail Sezal Ismail loves a challenge. Whether he is coming up with the next big

  1. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Adnan Bohori Adnan Bohori Manager Electromagnetic Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "Every day is new, filled with unknowns and different challenges." -Adnan Bohori Adnan Bohori likes to think out of the box. Whether it's working with his team in Bangalore to build a new technology space

  2. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Betoni Parodi Bruno Betoni Parodi Senior Electrical Engineer Offshore & Subsea Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "The sea has the potential to bring the world energy from multiple sources, and the technology required to master the space will be more advanced than anything we have seen

  3. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Leao Bruno Leao Lead Engineer Smart Systems CoE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "The resources are available to those who have the creativity. We all have the ability to turn knowledge into something amazing." -Bruno Leao Bruno began his academic career in control and automation engineering. He

  4. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dragan Filipovic Dragan Filipovic Senior Engineer Manufacturing Chemical & Materials Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "Believing that "the sky is the limit" is what sets apart an ordinary researcher from a great one." -Dragan Filipovic Dragan is a believer. He believes

  5. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hari NS Hari NS Manager Electrochemistry, Corrosion & Tribology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "Working on large programs over multiple years has taught me to develop the patience and resilience required to pursue the ideas in which I believe." -Hari NS Hari NS has many accomplishments of

  6. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Luiz Felipe Willcox Luiz Felipe Willcox Senior Engineer Smart Systems CoE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I love working in a field that aims to make energy available in all places." -Luiz Felipe Willcox Nothing motivates Luiz Felipe like watching his team succeed. An electrical engineer by

  7. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Prasanth Kumar Prasanth Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I am constantly discovering and rediscovering myself in different application spaces." -Prasanth Kumar Prasanth Kumar's passion - both for his work and his personal life - is

  8. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ricardo Hernandez Pereira Ricardo Hernandez Pereira Combustion Engineer - Turbines & Reciprocating Engines Bioenergy Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "Contemporary machines perform in ways early designers would consider unfeasible. 50 years into the future, people will have a similar

  9. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    & Analytics Jeffrey Schoonover Materials Engineer Ceramics & Metallurgy Meet Jeffrey Bruno Betoni Parodi Senior Electrical Engineer Offshore & Subsea Meet Bruno Radislav ...

  10. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time to pursue their passions. For Sultan, that would include video editing, making music, and keeping up with news from around the world... news that Sultan may one day help...

  11. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    able to interact and learn from each other," he says. Lucas is passionate about art and music. He thanks his mother for passing down her artistry as a painter. He also enjoys...

  12. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fabio Fonseca Fabio Fonseca Lead Engineer Software and Productivity Analytics CoE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window)...

  13. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amol Kolwalkar Amol Kolwalkar Senior Engineer Control & Optimization Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  14. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    studies, Bernardo puts his biochemistry background to work as a home brewer. He enjoys sports and watching movies. Published Work By Bernardo Cinelli Granular starch hydrolysis of...

  15. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  16. Powering | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Laboratory (Berkeley Lab) are exploring a possible key to energy storage for electric... Read More GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet...

  17. What is the GE store |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  18. Type B Accident Investigation of the April 8, 2003, Electrical Arc Blast at the Foster Wheeler Environmental Corporation TRU Waste Processing Facility, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    At approximately 0330 hours on April 8, 2003, a phase-to-phase arc blast occurred in the boiler electrical control panel at the Foster Wheeler Environmental Corporation (FWENC) Transuranic (TRU) Waste Processing Facility. The boiler was providing steam for the evaporator and was reportedly operating at about 10% of its capacity.

  19. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  20. Photonics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares the lab's work on innovative ways to use light. You Might Also Like

  1. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Tenzin Dechen

  2. Invention | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research...

  3. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here.

  4. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  5. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  6. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  7. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  8. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  9. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  10. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  11. Another SunShot Success: GE to Make PrimeStar Solar Panels at...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic ... printing technology to make tiny high-concentrating photovoltaic (HCPV) cells. ...

  12. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  13. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new ... Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser ...

  14. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  15. General Electric | Open Energy Information

    Open Energy Info (EERE)

    General Electric Place: Fairfield, Connecticut Zip: 06828 Region: Northeast - NY NJ CT PA Area Year Founded: 1892 Website: www.ge.com Coordinates: 41.1758333, -73.2719444...

  16. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Green Skies of Brazil Improves Airspace Efficiency It's not uncommon for planes approaching some of Brazil's busiest airports to travel miles out of the way while pilots wait... Read More » Reducing Emissions in the New Tier 4 Locomotive GE Global Research Internal Combustion lab manager Omowoleola "Wole" Akinyemi

  17. ARM - VAP Product - mmcrmode3ge200309091cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  18. ARM - VAP Product - mmcrmode3ge200804181cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  19. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  20. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  1. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  2. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  3. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  4. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. February 3, 2014 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los

  5. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  6. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  7. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  8. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  9. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  10. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  11. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  12. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  13. Brilliant Factories Could Revolutionize Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  14. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  15. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email...

  16. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  17. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  18. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  19. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    products and working on lots of different things, and I was convinced that this ideal job didn't exist. I came to find out about the Sensor & Signal Analytics Lab at GE Global...

  20. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  1. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  2. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technical Education at GE Global Research Mark Vermilyea describes the Edison Engineering Development Program (EEDP) and its "A Course," which features lectures on Global Research work in GE's major business units,

  3. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  4. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  5. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  6. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  7. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  8. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  9. Durathon Battery in New Bus | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Researchers at GE Global Research, the General Electric Company's (NYSE: GE) technology development arm, have achieved a first step in reducing the

  10. Cloud-Based Air Traffic Management Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Works to Bring Air Traffic Management Into "The Cloud" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General Electric Company (NYSE: GE) has embarked on an 18-month project with the

  11. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  12. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  13. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  14. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  15. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  16. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  17. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  18. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  19. What Is MEMS? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  20. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas with low silicate fluxes are Ge-depleted (Ge/Si < 0.5 x 10{sup {minus}6}). The authors speculate that glacial-interglacial changes in oceanic Ge/Si as recorded in diatoms may be due in part to variations in this authigenic Ge sink, perhaps related to shifts in siliceous productivity from open ocean (Antarctic) siliceous oozes during interglacials to areas of higher detrital input (Sub Antarctic, continental margins) and possibly also to generally more reducing conditions in sediments during glacials.

  1. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Information JLF Contacts Request a Tour

  2. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  3. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  4. Finding Engineering Inspiration at GE | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Getting inspired at the intersection of innovation and creativity Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Getting inspired at the intersection of innovation and creativity Alice Pinney 2015.05.11 Interning at a place where innovation meets creativity has been a dream come true for me. Being an intern at GE

  5. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  6. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  7. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software's Design and User Experience Studio Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and actionable software experiences for GE customers,

  8. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Healthcare We're making healthcare accessible for people around the globe, increasing quality of care and expanding medical treatment boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE researchers have created a comic... Read More » The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this

  9. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  10. GE Global Research in Oklahoma City

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to ...

  11. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas tree ornaments. You Might Also Like...

  12. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC...

  13. Joseph Vinciquerra | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Dynamics of Ice Nucleation on Water Repellent Surfaces GE Scientists Demonstrate Promising Anti-icing Nano Surfaces Influences of Friction, Geometric Nonlinearities, and ...

  14. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  15. Work & Life at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    This community creates a cross-business platform for GE China technologists to enhance ... These include the latest In China for China efforts, as well as product demonstrations, ...

  16. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  17. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    jet Read More Dual Fuel Locomotive Is Friendly to the Environment Inside GE's multimillion dollar single-cell test rig, scientists are working on advanced combustion and engine ...

  18. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  19. GE Global Research in Bangalore, India

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    toughest healthcare challenges direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open globalconnections300...

  20. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  1. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  2. Collaborative Military Vehicle Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  3. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  4. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  5. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  6. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  7. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  8. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  9. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  10. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  11. Scanning Photocurrent Microscopy of Si and Ge nanowires (Conference...

    Office of Scientific and Technical Information (OSTI)

    Conference: Scanning Photocurrent Microscopy of Si and Ge nanowires Citation Details In-Document Search Title: Scanning Photocurrent Microscopy of Si and Ge nanowires You are ...

  12. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  13. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  14. How Will Everything Be Intelligent? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research's Fu Xu, an expert in the Real Time Controls lab at GE's China ... Edition challenge CTCV Innovate in China, Innovate for China shanghai Ars ...

  15. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  16. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  17. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  18. Tech Digest July 2013 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tech Digest-July 2013 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Tech Digest-July 2013 Catch up on some of the latest technological developments at GE Global Research. You Might Also Like GE's Brilliant Factory Lab advances digital manufacturing Bringing a Digital Mindset to Manufacturing » ge store2 What is the

  19. Durathon Battery Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Durathon(tm) Battery Helps Power Electric Bus Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Durathon(tm) Battery Helps Power Electric Bus GE engineer Tim Richter explains how the company's Durathon(tm) batteries fit into the on-board energy management system on a bus at GE's Global Research Center. This

  20. ARM - VAP Product - mmcrmode3ge200404141cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4141cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027344 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200404141CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20040415 version Active Dates 2004.04.15 - 2007.11.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  1. ARM - VAP Product - mmcrmode3ge200408121cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8121cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027345 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200408121CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (8/04-5/05) Active Dates 2004.08.13 - 2008.04.17 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  2. ARM - VAP Product - mmcrmode3ge200511041cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    511041cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027346 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200511041CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (since 11/2005) Active Dates 2005.11.04 - 2011.02.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  3. ARM - VAP Product - mmcrmode3ge200606161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1095384 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200606161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 6/2006) Active Dates 2006.06.21 - 2011.03.07 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  4. ARM - VAP Product - mmcrmode3ge200608161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027348 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200608161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 11/2006) Active Dates 2006.11.27 - 2009.02.14 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  5. ARM - VAP Product - mmcrmode3ge200712011cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    712011cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027349 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200712011CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2008.01.01 - 2011.03.23 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  6. Tiffany Wheeler | Department of Energy

    Energy Savers [EERE]

    Optics | Department of Energy Through the Looking Glass: The Art and Science of Hand-Polishing Precision Optics Through the Looking Glass: The Art and Science of Hand-Polishing Precision Optics May 14, 2015 - 9:08am Addthis Jennifer Anthony Contributing Writer, Lawrence Livermore National Laboratory Our new #LabSpotlight series profiles standout individuals at the National Labs. The latest installment features Peter Thelin, an optics specialist at Lawrence Livermore National Laboratory. This

  7. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Law Student Intern Program General Counsel Law Student Intern Program The Department of Energy's Office of the General Counsel is accepting applications on a rolling basis for its Law Student Intern Program. The Office of the General Counsel offers an exciting opportunity for law students to gain firsthand exposure to the fast-moving and evolving practice of energy law. The General Counsel is charged by the Secretary of Energy with the authority to determine the Department's authoritative

  8. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

  9. Ideas Are Scary | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for a Career in R&D IsraelTechCenterV Israel: A Source of Innovation for GE NanaVertical Open Innovation and the Middle Market EdisonSummit2-14V Tomorrow's...

  10. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email...

  11. Diagnostics on Demand | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or enable JavaScript if it is disabled in your browser. GE's lead researcher, David Moore, shows how this paper-based instrument, the size of a deck of playing cards, enables...

  12. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-2-67-v-biofuel-research Biofuel Research at Brazil Center of Excellence IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and ...

  13. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matt Nielsen talks about waste-to-energy technology at the 2012 Invention Convention's Capital District awards ceremony. You Might Also Like 2-2-7-v GE Scientists Unveil Greener,...

  14. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Zach was an outstanding engineer, a man who led by example, and an innovative leader. ... Zach joined GE as an engineer in January 2006. Educated at Penn State and Cornell, his ...

  15. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  16. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "With GE's cancer mapping technology, we're enabling cancer to be viewed in ways it ... of proteins and nucleic acids (RNA and DNA) without destroying the integrity of the ...

  17. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  18. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  19. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  20. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  1. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  2. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  3. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  4. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  5. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  6. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Launches Ultrasound Open Innovation Initiative Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Ultrasound Open Innovation Initiative Similar to how independent developers create new applications and find new uses for smart phones, tablets and other intelligent devices, GE is looking to collaborate with a

  7. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to 1,200 girls in nine cities nationwide. GE joins other program partners including Accenture, Adobe, AIG, AT&T, Electronic Arts, Facebook, Google, Microsoft, Pixar Animation...

  8. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this ... GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year ...

  9. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  10. Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles GE Showcases Innovation in Alternative Fuel Vehicles to someone by E-mail Share Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Facebook Tweet about Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Twitter Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Google Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on

  11. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is concluded, for the major part, to be a direct consequence of the excessive spreads in the activation energies, ?23 times larger than for the Si DB P{sub b} defects at the standard thermal (111)Si/SiO{sub 2} interface which may be easily passivated to device grade levels, strengthened by the reduced difference between the average E{sub f} and E{sub d} values. Exploring the guidelines of the GST model indicates that passivation can be improved by decreasing T{sub an} and attendant enlarging of t{sub a}, however, at best still leaving ?2% defects unpassivated even for unrealistically extended anneal times. The average dissociation energy E{sub d}???2.23?eV, concluded as representing the GeP{sub b1}-H bond strength, is found to be smaller than the SiP{sub b}-H one, characterized by E{sub d}???2.83?eV. An energy deficiency is encountered regarding the energy sum rule inherent to the GST-model, the origin of which is substantiated to lie with a more complex nature of the forward passivation process than basically depicted in the GST model. The results are discussed within the context of theoretical considerations on the passivation of interfacial Ge DBs by hydrogen.

  12. Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters

    SciTech Connect (OSTI)

    Yuan, H. K.; Chen, H. Kuang, A. L.; Tian, C. L.; Wang, J. Z.

    2013-11-28

    Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

  13. General Engineer

    Broader source: Energy.gov [DOE]

    This position is located in Office of Standard Contract Management, within the Office of the General Counsel (GC). The purpose of the position is to conduct technical and engineering reviews of the...

  14. New Global Research Website | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I Want to See... the New Global Research Website Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) I Want to See... the New Global Research Website GE Global Research 2014.03.17 Today, we are excited to unveil the brand new GE Global Research website. You can find this new web destination at geglobalresearch.com. The new

  15. Promoting Cross Research Collaboration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel's Weekathon: GE Collaborating with multinational companies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel's Weekathon: GE Collaborating with multinational companies Gil Abramovich 2015.09.21 When taken out of their normal work environments for a week, offered an endless supply of snacks, and given the

  16. Work and Life Balance | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Flex Ability: Balancing Work with Life Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flex Ability: Balancing Work with Life Achieving work/life balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and

  17. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  18. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  19. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhanced Sensing Capabilities for CO2 Storage Wells Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Enhanced Sensing Capabilities for CO2 Storage Wells GE (NYSE: GE) Global Research today announced it has signed a contract with the National Energy Technology Laboratory (NETL), part of the U.S. Department of Energy (DOE)

  20. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  1. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  2. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  3. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  4. GE Scientists Source Best Ideas at hackMIT | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists Source Best Ideas at hackMIT Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Source Best Ideas at hackMIT Joseph Salvo 2013.10.03 At MIT they're serious about "hacking" together ideas for innovation, invention, and new businesses. This weekend a team from GE Global Research and GE

  5. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  6. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  7. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  8. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  9. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  10. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  11. At-Home Natural Gas Refueling | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Projects Agency for Energy (ARPA-E) to develop an affordable at-home ... 2.3 million, which will be shared by ARPA-E and GE. As part of the program, GE ...

  12. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of...

  13. Future of 3D Printing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  14. TEE-0074- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation...

  15. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  16. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  17. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new ...

  18. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE GLOBAL RESEARCH SERVICE ORDER TERMS AND CONDITIONS (May 2013) FORM A INTEGRITY STATEMENT: If you as a supplier become aware of any situation that appears to be inconsistent with GE's Policy to maintain lawful and fair practices in its supplier relationships, you may write to our Ombudsman at: GE Global Research, One Research Circle, Niskayuna, NY 12309. 1. ACCEPTANCE AND TERMS AND CONDITIONS: (a) Seller accepts this Order and any changes by signing the acceptance copy and returning it to GE.

  19. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  20. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  1. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV...

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeVC to 10-GeVC: Response to the HARP-CDP Group The results of ...

  2. GENERAL ASSIGNMENT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GEA's National Geothermal Summit 2016 GEA's National Geothermal Summit 2016 June 7, 2016 8:00AM EDT to June 8, 2016 5:00PM EDT GEA's National Geothermal Summit 2016 Reno, Nevada http://www.geo-energy.org/nationalgeothermalsummit/main.aspx

    GENERAL ASSIGNMENT KNOW ALL MEN BY THESE PRESENTS, that ___________________________________, a corporation organized and existing under the laws of the State of ________________________, with its principal place of business at

  3. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  4. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  5. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  6. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOE Patents [OSTI]

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  7. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  8. Construction progresses at GE's Oil & Gas Technology Center | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Construction is

  9. GE Uses 3D Printers to Make Jet Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Uses 3D Printers to Make Jet Parts Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Uses 3D Printers to Make Jet Parts GE Global Research 2013.12.05 Christine Furstoss, Technology Director for Manufacturing and Materials Technologies, was interviewed on Bloomberg Television's "Bloomberg West" by Emily Chang.

  10. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  11. GE to provide data, analytics to Brazilian Canoe Confederation | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research to sponsor Brazilian Canoe Confederation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance for the Rio 2016 Olympic and Paralympic

  12. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  13. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  14. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  15. Jim Bray Interview | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  16. Advanced Propulsion Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  17. Masako Yamada | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  18. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  19. Pi in Applied Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the Applied Optics Lab II Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab II The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped Ben Franklin,

  20. MU(& Ge-+v,

    Office of Legacy Management (LM)

    fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla

  1. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composites Automation Cuts Production Time Down to Hours Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Composites Automation Cuts Production Time Down to Hours Over the next few years, GE Aviation will introduce more new engine platforms than it has in the past few decades. This will bring about unprecedented demands

  2. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LightGrid Provides Real-Time Feedback From Street Lights Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) LightGrid Provides Real-Time Feedback From Street Lights You use a GPS to provide real-time data from your car. Now, technologists from the Controls, Electronics and Signal Processing Lab at GE Global Research will

  3. Connecting to the Grid | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting to the Grid Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Connecting to the Grid Ranjan Gupta 2014.02.24 I'm blogging this week from an event I'm always thrilled to attend - the annual ARPA-e Energy Innovation Summit in Washington. I'm joined here by a few of my colleagues from GE Global Research to

  4. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  5. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  6. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    SciTech Connect (OSTI)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  7. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  8. GE Software Expert Julian Keith Loren Discusses Innovation and the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  9. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  10. 3D Printing Aircraft Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  11. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  12. Engineers Named to National Academy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  13. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  14. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  15. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capability. New strengths, skills and cultural change are needed across GE, including multilevel leadership, technical and commercial capabilities, signaling a complete...

  16. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  17. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  18. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ... GE China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ...

  19. China Technology Center Celebrates 15 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to ... GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" ...

  20. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE software scientists and developers to spur high-speed connectivity and access to really big data Disruptive innovation demonstrates industry success in creating viable test beds ...

  1. Invention Factor: How Will The World Get Smaller | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    is changing the manufacturing process for jet engines and opening up the world of air ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  2. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  3. Cloud Computing Manufacturing Efforts Take Off | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cloud computing capabilities. Last year, we demonstrated an innovative crowdsourcing platform with DARPA and are now exploring the use of this technology for GE and its partners. ...

  4. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  5. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg{sub 2}Ge and GeCl{sub 4}

    SciTech Connect (OSTI)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-15

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg{sub 2}Ge and GeCl{sub 4} in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells. - Graphical abstract: Nano-Ge particles 2-10 nm in diameter were prepared by reaction between Mg{sub 2}Ge Zintl phase and GeCl{sub 4} in diglyme followed by capping with BuLi and extraction into hexane. We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to follow the course of the reaction. A TEM image of the germanium nanoparticles is shown. Highlights: > In situ characteristaion of germanium nanoparticles. > X-ray spectroscopic technique development. > Improving quality of nanoparticles grown by metathesis route.

  6. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group (Journal Article) | SciTech Connect GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group The results of the HARP-CDP group on the comparison of GEANT4 Monte Carlo predictions versus experimental data are discussed. It is shown that the problems observed by the group are caused by an

  7. Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

    SciTech Connect (OSTI)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Kashyap, Manish K.

    2014-04-24

    A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

  8. Open Geospace General Circulation Model simulation of a substorm: Axial

    Office of Scientific and Technical Information (OSTI)

    tail instability and ballooning mode preceding substorm onset (Journal Article) | SciTech Connect Open Geospace General Circulation Model simulation of a substorm: Axial tail instability and ballooning mode preceding substorm onset Citation Details In-Document Search Title: Open Geospace General Circulation Model simulation of a substorm: Axial tail instability and ballooning mode preceding substorm onset Authors: Raeder, J ; Zhu, P ; Ge, Y ; Siscoe, G Publication Date: 2010-12-31 OSTI

  9. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  10. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  11. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  12. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  13. GE Appliances: Proposed Penalty (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards.

  14. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  15. Data Science Makes Trains More Efficient | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Science Makes Trains More Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence, Sally LePage, talks to GE Global Research's Pierino Bonanni about the GE technology that is making its locomotives more fuel efficient than

  16. A = 5 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 General Tables The General Table for 5H is subdivided into the following categories: Cluster Model Hypernuclei Model Calculations Photodisintegration Pions The General Table for...

  17. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  18. GE Develops High Water Recovery Technology in China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  19. GE partners with 'Girls Who Code' for summer program | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  20. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  1. GE Opens New Global R&D Center in Brazil - GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for oil and gas processing on the seabed Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for

  2. GE partners with Matthew Dear to create "Drop Science" | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Partners with Matthew Dear to Create "Drop Science" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that machine is operating at peak

  3. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  4. Bringing a Digital Mindset to Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a theme here? This week, GE joined the UI LABS-led Digital Manufacturing Design and Innovation Institute (DMDII) in announcing the creation of an open-source platform that will...

  5. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  6. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  7. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click ...

  8. Pattern Recognition and Image Analysis in Materials | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  9. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SessionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets...

  10. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  11. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. ... A good example of this today is solid-oxide fuel cells. Footage of a photo of a man in ...

  12. The role of surface passivation in controlling Ge nanowire faceting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  13. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  14. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with ... Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led ...

  15. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Info (EERE)

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  16. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff ...

  17. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  18. GE Progetti 3i Spa | Open Energy Information

    Open Energy Info (EERE)

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  19. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share ...

  20. How Will We Live Forever? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    angCaicloudcomputingV Robots and Predix make Beijing's CT factory brilliant IMG0475 Innovation 247: We're Always Open 1-2-111-v-ge-getfit-balanced-lifestyle A Balanced...

  1. Invention Factory: How Will Robots Evolve | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in your browser. You Might Also Like direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open shutterstock316484033...

  2. 8C General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C General Tables The General Table for 8C is subdivided into the following categories: Reviews Other Theoretical Work

  3. 6Be General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6Be General Table The General Table for 6Be is subdivided into the following categories: Cluster Model Model Calculations...

  4. Advanced Technology & Discovery at Niskayuna | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Niskayuna Technology & Discovery at Niskayuna Capture the momentum behind leading-edge technologies from advanced manufacturing to supercomputing at GE's research headquarters. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Controls Controls at GE are used in

  5. Arc Vault Significantly Reduces Electrical Hazards | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Arc Vault Significantly Reduces Electrical Hazards Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Arc Vault Significantly Reduces Electrical Hazards GE Global Research 2012.05.01 Recently, technology developed at GE Global Research received high praise from industry leaders for its ability to shield industrial -

  6. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A.; Suslov, A. V.; Mironov, O. A.; Kummer, M.; Känel, H. von

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  7. Study of Pu consumption in advanced light water reactors: Evaluation of GE advanced boiling water reactor plants - compilation of Phase 1B task reports

    SciTech Connect (OSTI)

    1993-09-15

    This report contains an extensive evaluation of GE advanced boiling water reactor plants prepared for United State Department of Energy. The general areas covered in this report are: core and system performance; fuel cycle; infrastructure and deployment; and safety and environmental approval.

  8. 7He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 7He is subdivided into the following categories: Experimental Theoretical Model Calculations Hypernuclei and Mesons Pions

  9. 9He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 9He is subdivided into the following categories: Shell Model Other Model Calculations Theoretical

  10. General | Open Energy Information

    Open Energy Info (EERE)

    General Jump to: navigation, search Informacin y Documentos Herramientas y Modelos <> Estadsticas de Energas Renovables Volver Pgina principal General banner.jpg Retrieved...

  11. 5H General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    H General Table The General Table for 5H is subdivided into the following categories: Cluster Model Hypernuclei Model Calculations Photodisintegration Pions...

  12. 10He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Table The General Table for 10He is subdivided into the following categories: Theoretical Shell Model Cluster Model Other Models Special States Electromagnetic Transitions...

  13. DOE to Develop Multi-Megawatt Offshore Wind Turbine with General Electric |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy to Develop Multi-Megawatt Offshore Wind Turbine with General Electric DOE to Develop Multi-Megawatt Offshore Wind Turbine with General Electric March 9, 2006 - 11:44am Addthis Contract Valued at $27 million, supports President Bush's Advanced Energy Initiative WASHINGTON, D.C. - The U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) in Golden, Colorado, has signed a $27 million, multi-year contract with the General Electric Company (GE) to

  14. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  15. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  16. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  17. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  18. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  19. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  20. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  1. High Performance Computing for Manufacturing Parternship | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  2. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  3. The Technology Behind the Locomotives | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Roy Primus 2014.05.10 It may be hard to believe, but in today's world of faster, stronger, smarter and cheaper,

  4. Itinerant magnetism in metallic CuFe2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  5. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital Region and Upstate Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million

  6. PILAC: A pion linac facility for 1-GeV pion physics at LAMPF

    SciTech Connect (OSTI)

    Thiessen, H.A.; White, D.H.

    1991-11-22

    A design study for a Pion Linac (PILAC) at LAMPF is under way at Los Alamos. We present here a reference design for a system of pion source, linac, and high-resolution beam line and spectrometer that will provide 10{sup 9} pions per second on target and 200-keV resolution for the ({pi}{sup +}, K{sup +}) reaction at 0.92 GeV. A general-purpose beam line that delivers both positive and negative pions in the energy range 0.4-1.1 GeV is included, thus opening up the possibility of a broad experimental program as is discussed in this report. A kicker-based beam sharing system allows delivery of beam to both beam lines simultaneously with independent sign and energy control. Because the pion linac acts like an rf particle separator, all beams produced by PILAC will be free of electron (or positron) and proton contamination. 4 refs., 6 figs.

  7. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  8. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  9. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  10. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  11. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  12. High spin polarization in CoFeMnGe equiatomic quaternary Heusler...

    Office of Scientific and Technical Information (OSTI)

    Title: High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic...

  13. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  14. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Info (EERE)

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  15. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  16. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    in GeO 2 glass with coordination number >6 This content will become publicly available on September 29, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  17. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 ... Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 ...

  18. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  19. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  20. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we ... These are the harbingers of a new era, that of 12 GeV operations and physics. We have been ...

  1. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Info (EERE)

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  2. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  3. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  4. Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics ... 07.01.13 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists ...

  5. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    EERE-2010-BT-CE-0014 GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 Microsoft Word -...

  6. 8Be General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Be General Tables The General Table for 8Be is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Models Photodisintegration Fission and Fusion Astrophysical b-decay Hypernuclei

  7. 8He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Tables The General Table for 8He is subdivided into the following categories: Reviews Ground-state Properties Shell Model Cluster Model Other Theoretical Work Elastic and Inelastic Scattering b-decay

  8. 9B General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    B General Table The General Table for 9B is subdivided into the following categories: Shell Model Cluster Model Theoretical Other Model Calculations Complex Reactions Beta-Decay Pions Light-ion and Neutron Induced Reactions Hypernuclei

  9. 9C General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C General Table The General Table for 9C is subdivided into the following categories: Shell Model Cluster Model Other Models Theoretical Beta-Decay Light-ion and Neutron Induced Reactions Astrophysical

  10. OFFICE OF INSPECTOR GENERAL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    APP-005 Planning for and Measuring Office of Inspector General Results FY 2002 Annual Performance Report and FY 2003 Annual Performance Plan Office of Inspector General U.S. Department of Energy Inspector General's Message We are pleased to present the Office of Inspector General's (OIG) consolidated Fiscal Year 2002 Annual Performance Report and Fiscal Year 2003 Annual Performance Plan. This document evaluates our actual Fiscal Year (FY) 2002 performance and establishes the performance goals

  11. Environmental, Health and Safety Assessment: ATS 7H Program (Phase 3R) Test Activities at the GE Power Systems Gas Turbine Manufacturing Facility, Greenville, SC

    SciTech Connect (OSTI)

    1998-11-17

    International Technology Corporation (IT) was contracted by General Electric Company (GE) to assist in the preparation of an Environmental, Health and Safety (HI&3) assessment of the implementation of Phase 3R of the Advanced Turbine System (ATS) 7H program at the GE Gas Turbines facility located in Greenville, South Carolina. The assessment was prepared in accordance with GE's contractual agreement with the U.S. Department of Energy (GE/DOE Cooperative Agreement DE-FC21-95MC3 1176) and supports compliance with the requirements of the National Environmental Policy Act of 1970. This report provides a summary of the EH&S review and includes the following: General description of current site operations and EH&S status, Description of proposed ATS 7H-related activities and discussion of the resulting environmental, health, safety and other impacts to the site and surrounding area. Listing of permits and/or licenses required to comply with federal, state and local regulations for proposed 7H-related activities. Assessment of adequacy of current and required permits, licenses, programs and/or plans.

  12. A = 7 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 General Tables The General Table for 7He is subdivided into the following categories: Experimental Theoretical Model Calculations Hypernuclei and Mesons Pions The General Table for 7Li is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Theoretical Work Model Calculations Photodisintegration Polarization Fission and Fusion Elastic and Inelastic Scattering Projectile Fragmentation and Multifragmentation Astrophysical Hyperfine Structure

  13. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  14. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  15. Exclusive pi^0 electroproduction at W > 2 GeV with CLAS

    SciTech Connect (OSTI)

    Bedlinskiy, I.; Kubarovsky, V.; Niccolai, S.; Stoler, P.; Adhikari, K.P.; Anderson, M.D.; Pereira, S. Anefalos; Avakian, H.; Ball, J.; Baltzell, N.A.; Battaglieri, M.; Batourine, V.; Biselli, A.S.; Boiarinov, S.; Bono, J.; Briscoe, W.J.; Brooks, W.K.; Burkert, V.D.; Carman, D.S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P.L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fleming, J.A.; Forest, T.A.; Garillon, B.; Garcon, M.; Gavalian, G.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G.P.; Giovanetti, K.L.; Girod, F.X.; Golovatch, E.; Gothe, R.W.; Griffioen, K.A.; Guegan, B.; Guo, L.; Hafidi, K.; Hakobyan, H.; Harrison, N.; Hattawy, M.; Hicks, K.; Holtrop, M.; Ireland, D.G.; Ishkhanov, B.S.; Isupov, E.L.; Jenkins, D.; Jo, H.S.; Joo, K.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F.J.; Koirala, S.; Kuhn, S.E.; Kuleshov, S.V.; Lenisa, P.; Levine, W.I.; Livingston, K.; Lu, H.Y.; MacGregor, I.J.D.; Markov, N.; Mayer, M.; McKinnon, B.; Mirazita, M.; Mokeev, V.; Montgomery, R.A.; Moody, C.I.; Moutarde, H.; Movsisyan, A; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A.I.; Pappalardo, L.L.; Park, K.; Park, S.; Pasyuk, E.; Phelps, E.; Phelps, W.; Phillips, J.J.; Pisano, S.; Pogorelko, O.; Price, J.W.; Prok, Y.; Protopopescu, D.; Procureur, S.; Puckett, A.J.R.; Raue, B.A.; Ripani, M.; Ritchie, B.G.; Rizzo, A.; Rossi, P.; Roy, P.; Sabati, F.; Salgado, C.; Schott, D.; Schumacher, R.A.; Seder, E.; Senderovich, I.; Sharabian, Y.G.; Simonyan, A.; Smith, G.D.; Sober, D.I.; Sokhan, D.; Stepanyan, S.S.; Strauch, S.; Sytnik, V.; Tang, W.; Tian, Ye; Ungaro, M.; Vlassov, A.V.; Voskanyan, H.; Voutier, E.; Walford, N.K.; Watts, D.; Wei, X.; Weinstein, L.B.; Yurov, M.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z.W.; Zonta, I.

    2014-08-01

    Exclusive neutral-pion electroproduction (ep-->e'p'pi0) was measured at Jefferson Lab with a 5.75-GeV electron beam and the CLAS detector. Differential cross sections d4sigma/dtdQ2dxBdphipi and structure functions sigmaT+epsilonsigmaL,sigmaTT and ?LT as functions of t were obtained over a wide range of Q2 and xB. The data are compared with Regge and handbag theoretical calculations. Analyses in both frameworks find that a large dominance of transverse processes is necessary to explain the experimental results. For the Regge analysis it is found that the inclusion of vector meson rescattering processes is necessary to bring the magnitude of the calculated and measured structure functions into rough agreement. In the handbag framework, there are two independent calculations, both of which appear to roughly explain the magnitude of the structure functions in terms of transversity generalized parton distributions.

  16. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PowerPoint - GE-Prolec CCE Meeting 10/19/2010 Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 More Documents & Publications GE-Prolec CCE Meeting October 19,2010 EA-1565: Final Environmental Assessment Benefits of Using Mobile Transformers and Mobile Substations for Rapidly Restoring Electrical Service: a Report to the United

  17. 10Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 10Li is subdivided into the following categories: Reviews Theoretical Ground State Properties Shell Model Cluster Model Other Models Special States Astrophysical Electromagnetic Transitions Hypernuclei Photodisintegration Light-Ion and Neutron Induced Reactions These General Tables correspond to the 2003 preliminary evaluation of ``Energy Levels of Light Nuclei, A = 10''. The prepublication version of A = 10 is available on this website in PDF format: A =

  18. General Service LED Lamps

    Broader source: Energy.gov [DOE]

    A U.S. DOE SSL technology fact sheet that compares general service LED light bulbs with incandescent and CFL bulbs.

  19. General Service LED Lamps

    SciTech Connect (OSTI)

    2012-04-01

    Solid-state lighting program technology fact sheet that compares general service incandescent lamps—i.e., light bulbs—to LED and CFL alternatives.

  20. A = 10 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Table for 10He is subdivided into the following categories: Theoretical Shell Model Cluster Model Other Models Special States Electromagnetic Transitions The General Table for...

  1. A = 9 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The General Table for 9Li is subdivided into the following categories: Shell Model Cluster Model Theoretical Ground State Properties Special States Other Model Calculations...

  2. 10N General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    subdivided into the following categories: Reviews Ground-State Properties Shell Model Cluster Model Other Theoretical Work These General Tables correspond to "Energy Levels of...

  3. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  4. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  5. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  6. Meson Spectroscopy at JLab@12 GeV

    SciTech Connect (OSTI)

    Celentano, Andrea

    2013-03-01

    Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

  7. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  8. Synthesis, structural characterization and properties of SrAl{sub 4−x}Ge{sub x}, BaAl{sub 4−x}Ge{sub x}, and EuAl{sub 4−x}Ge{sub x} (x≈0.3–0.4)—Rare examples of electron-rich phases with the BaAl{sub 4} structure type

    SciTech Connect (OSTI)

    Zhang, Jiliang; Bobev, Svilen

    2013-09-15

    Three solid solutions with the general formula AEAl{sub 4−x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)≤x≤0.41(1)) have been synthesized via the aluminum self-flux method, and their crystal structures have been established from powder and single-crystal X-ray diffraction. They are isotypic and crystallize with the well-known BaAl{sub 4} structure type, adopted by the three AEAl{sub 4} end members. In all structures, Ge substitutes Al only at the 4e Wyckoff site. Results from X-rays photoelectron spectroscopy on EuAl{sub 4−x}Ge{sub x} and EuAl{sub 4} indicate that the interactions between the Eu{sup 2+} cations and the polyanionic framework are enhanced in the Ge-doped structure, despite the slightly elevated Fermi level. Magnetic susceptibility measurements confirm the local moment magnetism, expected for the [Xe]4f{sup 7} electronic configuration of Eu{sup 2+} and suggest strong ferromagnetic interactions at cryogenic temperatures. Resistivity data from single-crystalline samples show differences between the title compounds, implying different bonding characteristics despite the close Debye temperatures. A brief discussion on the observed electron count and homogeneity ranges for AEAl{sub 4−x}Ge{sub x} (AE=Eu, Sr, Ba) is also presented. - Graphical abstract: AEAl{sub 4−x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)≤x≤0.41(1)), three “electron-rich” phases with BaAl{sub 4} structure type have been synthesized and characterized. Display Omitted - Highlights: • Three BaAl{sub 4}-type ternary aluminum germanides have been synthesized with Eu, Sr and Ba. • Eu, Sr and Ba cations have no apparent influence on the solubility of Ge. • The Ge atoms substitute Al on one of two framework sites, thereby strengthening the interactions between the cations and the polyanionic framework.

  9. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  10. Engineering Camp Puts STEAM Roller in Motion |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Institute Exposes Young Girls to Engineering Fields Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineering Institute Exposes Young Girls to Engineering Fields Cheryl Sabourin 2014.08.13 GE Global Research recently hosted 30 middle schools students from the Niskayuna Engineering Institute for Young

  11. Advanced Technology & Discovery at Munich | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Munich Technology & Discovery at Munich Interact with groundbreaking scientific and technological solutions across nearly all industries at GE's hub in Central Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Composite Manufacturing This discipline focuses

  12. Advanced Technology & Discovery at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Shanghai Technology & Discovery at Shanghai Connect with sustainable infrastructure and healthcare technologies introduced to the world through GE's "In China for China" strategy. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Non-Thermal Brine

  13. Stump the Scientist | Page 2 of 3 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stump the Scientist Curiosity is the inventor's greatest tool. Ask us your question about science or technology and see what our scientists say! Home > Invention > Stump the Scientist Are Permanent Magnets Really Permanent? Watch the Video » Do Molecules Get Old? Watch the Video » Ready to Stump the Scientist? Try your hand at leaving our researchers speechless. Submit Question » Is Wireless Electricity Possible? Watch the Video » Who Is Jim Bray, GE Stump the Scientist? Watch the

  14. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  15. 5He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 5He is subdivided into the following categories: Ground State Properties Theoretical Special States Model Discussions Shell Model Cluster Model Complex Reactions Astrophysics Model Calculations Light-ion and Neutron Induced Reactions Electron Scattering Muon Catalyzed Fusion Other Fusion Photodisintegration Polarization Pions Hypernuclei

  16. 6He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 6He is subdivided into the following categories: Ground State Properties Theoretical Special States Shell Model Cluster and alpha-particle Models Other Models Model Calculations Complex Reactions Involving 6He Electromagnetic Transitions Muon and Neutrino Capture and Reactions Reactions Involving pions, Other Mesons and Baryon States Photodisintegration Astrophysics Hypernuclei

  17. 6Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 6Li is subdivided into the following categories: Ground State Properties of 6Li Special States Theoretical Shell Model Cluster Models Complex Reactions Involving 6Li Model Calculations Electromagnetic Transitions Muon and Neutrino Capture and Reactions Reactions Involving Pions, Other Mesons and Baryon States Light-ion and Neutron Induced Reactions Pions Hypernuclei Reactions Involving Antiprotons Astrophysics

  18. 7Be General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Be General Table The General Table for 7Be is subdivided into the following categories: Reviews Experimental Work Shell Model Cluster Model Other Theoretical Work Model Calculations Projectile Fragmentation and Multifragmentation Astrophysical b Decay Astrophysical Neutrinos Hypernuclei, Mesons and Other Exotic Particles Applications

  19. 7Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 7Li is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Theoretical Work Model Calculations Photodisintegration Polarization Fission and Fusion Elastic and Inelastic Scattering Projectile Fragmentation and Multifragmentation Astrophysical Hyperfine Structure b-decay Muons Hypernuclei and Mesons Hypernuclei and Baryons Pion, Kaon and Eta-Mesons Other Work Applications

  20. 8B General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    B General Tables The General Table for 8B is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Models Photodisintegration and Coulomb Dissociation Elastic and Inelastic Scattering Fragmentation Reactions Astrophysical b Decay Nucleon Spatial Distribution

  1. 8Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Tables The General Table for 8Li is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Models Photodissociation Fusion and Fission Elastic and Inelastic Scattering Fragmentation Reactions Astrophysical b Decay Hypernuclei Pions, Kaons and h-mesons

  2. 9Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 9Li is subdivided into the following categories: Shell Model Cluster Model Theoretical Ground State Properties Special States Other Model Calculations Complex Reactions Beta-Decay Pions Muons Photodisintegration Elastic and Inelastic Scattering Electromagnetic Transitions Astrophysical

  3. SOP for General Program Evaluations

    Broader source: Energy.gov [DOE]

    SOP for General Program Evaluations: Quality Assurance for General Program Evaluation Studies, June 26, 2006.

  4. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  5. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  6. Exclusive Photoproduction of Charged Pions in Hydrogen and Deuterium from 1 to 6 GeV

    SciTech Connect (OSTI)

    Lingyan Zhu

    2004-02-28

    The study of the transition region in the description of exclusive processes and hadron structure, from the nucleon-meson degrees of freedom in meson-exchange models at low energy to the quark-gluon degrees of freedom in pQCD at high energy, is essential for us to understand the strong interaction. The differential cross section measurements for exclusive reactions at fixed center-of-mass angles enable us to investigate the constituent counting rule, which explicitly connects the quark-gluon degrees of freedom to the energy dependence of differential cross sections. JLab Experiment E94-104 was carried out in Hall A with two high resolution spectrometers. It included the coincidence cross section measurement for the [gamma]n --> pi{sup -}[p] process with a deuterium target and the singles measurement for the [gamma]p --> pi{sup +}[n] process with a hydrogen target. The untagged real photons were generated by the electron beam impinging on a copper radiator. The photon energies ranged from 1.1 to 5.5 GeV, corresponding to the center-of-mass energies from 1.7 to 3.4 GeV. The pion center-of-mass angles were fixed at 50 deg, 70 deg, 90 deg, and also 100 deg, 110 deg at a few energies. The JLab E94-104 data presented in this thesis contain four interesting features. The data exhibit a global scaling behavior for both [pi]{sup -} and [pi]{sup +} photoproduction at high energies and high transverse momenta, consistent with the constituent counting rule and the existing [pi]{sup +} photoproduction data. This implies that the quark-gluon degrees of freedom start to play a role at this energy scale. The data suggests possible substructure of the scaling behavior, which might be oscillations around the scaling value. There are several possible mechanisms that can cause oscillations, for example the one associated with the generalized constituent counting rule involving quark orbital angular momentum. The data show an enhancement in the scaled cross section at center-of-mass energy near 2.2 GeV, where baryon resonances are not as well known as those at low energies. The differential cross section ratios for exclusive [gamma]n --> pi{sup -}[p] to [gamma]p --> pi{sup +}[n] process at [theta]{sub cm} = 90 deg start to show consistency with the prediction based on one-hard-gluon-exchange diagrams at high energies.

  7. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  8. Symmetric generalized binomial distributions

    SciTech Connect (OSTI)

    Bergeron, H.; Curado, E. M. F.; Instituto Nacional de Cincia e Tecnologia - Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 - Rio de Janeiro, RJ ; Gazeau, J. P.; APC, UMR 7164, Univ Paris Diderot, Sorbonne Paris Cit, 75205 Paris ; Rodrigues, Ligia M. C. S. E-mail: evaldo@cbpf.br E-mail: ligia@cbpf.br

    2013-12-15

    In two recent articles, we have examined a generalization of the binomial distribution associated with a sequence of positive numbers, involving asymmetric expressions of probabilities that break the symmetry win-loss. We present in this article another generalization (always associated with a sequence of positive numbers) that preserves the symmetry win-loss. This approach is also based on generating functions and presents constraints of non-negativeness, similar to those encountered in our previous articles.

  9. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General User Proposals (GUPs) Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in the tables, for additional information about the

  10. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  11. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  12. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  13. Supercomputing with Livermore National Lab | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Working With Livermore National Lab on Supercomputing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working With Livermore National Lab on Supercomputing GE Global Research has been selected by Lawrence Livermore National Laboratory (LLNL) to participate in an incubator program that will use high-performance computing

  14. A Balanced Lifestyle Makes Time for Exercise | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Balanced Lifestyle Makes Time for Exercise Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Balanced Lifestyle Makes Time for Exercise Jim Bray 2012.09.18 In the past few weeks, we've shared #GetFit stories from our Niskayuna and San Ramon sites. GE Healthcare's #getfit campaign is a social media initiative to drive

  15. Unimpossible Missions: The University Edition | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Earlier this year, three teams of GE Global Research

  16. Really Cool Models of Ice Nucleation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Really Cool Models of Ice Nucleation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Really Cool Models of Ice Nucleation Rick Arthur 2013.08.20 I'm excited to highlight some progress GE Research has made in modeling the formation of ice from water droplets in contact with cold surfaces. For several years, a

  17. Meeting Energy Needs in Brazil |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  18. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  19. How Will We Power the Planet? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power The Planet? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Power The Planet? In this episode of Invention Factory, a collaboration between GE and Vice, we look at sustainable energy sources generating power in unexpected ways. From trash to the ocean's tidal energy - all the energy

  20. Industrial Materials and Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  1. Innovate in China, Innovate for China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovate in China, Innovate for China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Innovate in China, Innovate for China Xiangli Chen, Ph.D. 2015.06.05 15 years is nothing but a fleeting moment. I can still recall the day when a 10-member GE China technology team settled in Shanghai 15 years ago. Back then, we had an

  2. BBQ -- Is It Science or Art? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  3. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  4. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  5. Water Treatment in Oil and Gas Production | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Treatment and Reuse in Unconventional Gas Production Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Water Treatment and Reuse in Unconventional Gas Production A key challenge in tapping vast reserves of natural gas from shale deposits is treating the water that is used to bring this gas to the surface. GE

  6. Inventors in Action: Energy Everywhere | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  7. Hybrid and Electric Traction Motor | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A World-Class Traction Motor for Hybrid and Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor technology that could have a substantial impact on hybrid and electric vehicles (EVs) of the

  8. Oil & Gas Technology at Oklahoma City | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA > Technology & Discovery at Oklahoma City Technology & Discovery at Oklahoma City Experience efforts to safely, efficiently and reliably accelerate oil and gas industry-changing solutions at GE's newest global research facility. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Areas of

  9. What Works Summit on Manufacturing Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    What Works Summit on Manufacturing Innovation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) What Works Summit on Manufacturing Innovation Glen Merfeld 2012.02.20 Last week, GE held a four-day summit in Washington, D.C., focused on the long-term economic and industry growth of the United States. Discussion focused on

  10. Women in Science and Engineering Are Online | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Science and Engineering Are Online Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Women in Science and Engineering Are Online Kristen Brosnan 2012.12.04 Today, GE Global Research is kicking-off our two-day Women in Science and Engineering (WISE) Symposium. The event is aimed at discussing best practices for

  11. Work & Life at Munich | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Work & Life at Munich Work & Life at Munich Living at Germany's Cosmopolitan Crossroads offers easy access to outdoor pursuits in the Alps and travel throughout Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Volunteers Our volunteers commit each year to multiple events such as

  12. Working on Advanced Battery Technologies With National Labs | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Working on Advanced Battery Technologies With National Labs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working on Advanced Battery Technologies With National Labs Yan Gao 2011.07.27 Yan Gao is a Senior Scientist in the Chemical and Structure Analysis Laboratory at GE-GRC in Niskayuna NY. Yan

  13. Digital Twins of physical assets prevents unplanned downtime | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  14. Slow Mo Guys and Cold Spray | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  15. BELLA generates multi-GeV electron beam

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BELLA generates multi-GeV electron beam Click to share on Facebook (Opens in new window) Click to share on Twitter (Opens in new window) Click to share on Reddit (Opens in new window) Click to share on Pinterest (Opens in new window) Berkeley Lab scientists want to develop accelerators in such a way that accessing the light produced by beams is much less expensive and can be performed in much smaller settings. This image showa a 9 cm long capillary discharge waveguide used in BELLA experiments

  16. Generalized galilean genesis

    SciTech Connect (OSTI)

    Nishi, Sakine; Kobayashi, Tsutomu

    2015-03-31

    The galilean genesis scenario is an alternative to inflation in which the universe starts expanding from Minkowski in the asymptotic past by violating the null energy condition stably. Several concrete models of galilean genesis have been constructed so far within the context of galileon-type scalar-field theories. We give a generic, unified description of the galilean genesis scenario in terms of the Horndeski theory, i.e., the most general scalar-tensor theory with second-order field equations. In doing so we generalize the previous models to have a new parameter (denoted by α) which results in controlling the evolution of the Hubble rate. The background dynamics is investigated to show that the generalized galilean genesis solution is an attractor, similarly to the original model. We also study the nature of primordial perturbations in the generalized galilean genesis scenario. In all the models described by our generalized genesis Lagrangian, amplification of tensor perturbations does not occur as opposed to what happens in quasi-de Sitter inflation. We show that the spectral index of curvature perturbations is determined solely from the parameter α and does not depend on the other details of the model. In contrast to the original model, a nearly scale-invariant spectrum of curvature perturbations is obtained for a specific choice of α.

  17. GE Partners with Lab on Ultrasonic Clothes Dryer | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  18. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  19. ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge ,

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , Citation Details In-Document Search Title: ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , We present observations of supernova (SN) 2008ge, which is spectroscopically similar to the peculiar SN 2002cx, and its pre-explosion site indicating that its progenitor was probably a white dwarf. NGC 1527, the host galaxy of SN 2008ge, is an S0 galaxy with no evidence

  20. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  1. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  2. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). Jefferson Lab Accelerator Delivers Its First 12 GeV

  3. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  4. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are describe in this paper. The results of beam commissioning of the injector are also presented.

  5. The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel

    Office of Scientific and Technical Information (OSTI)

    germanides (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides Citation Details In-Document Search Title: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides The Ho-Ni-Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type),

  6. GENERAL PRINCIPLES OF AGREEMENT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GENERAL PRINCIPLES OF AGREEMENT HWB-14-20 and HWB-14-21 These General Principles of Agreement ("Principles of Agreement") are agreed upon by the New Mexico Environment Department ("NMED"), and the United States Department of Energy ("DOE"), Los Alamos National Security, LLC ("LANS"), and Nuclear Waste Partnership, LLC ("NWP") (collectively, with DOE and LANS, the "DOE Permittees") for the purpose of resolving Compliance Order Nos.

  7. DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research

    SciTech Connect (OSTI)

    Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

    2009-07-31

    General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

  8. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  9. Search for GeV GRBs at Chacaltaya

    SciTech Connect (OSTI)

    Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S.; Navarra, G.; Saavedra, O.; Yoshii, H.; Kaneko, T.; Kakimoto, K.; Nishi, K.; Cabrera, R.; Urzagasti, D.; Velarde, A.; Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N.; Fishman, G. J.

    1998-05-16

    In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

  10. Constrained Generalized Supersymmetries

    SciTech Connect (OSTI)

    Toppan, Francesco; Kuznetsova, Zhanna

    2005-10-17

    We present a classification of admissible types of constraint (hermitian, holomorphic, with reality condition on the bosonic sectors, etc.) for generalized supersymmetries in the presence of complex spinors. A generalized supersymmetry algebra involving n-component real spinors Qa is given by the anticommutators {l_brace}Q{sub a},Q{sub b}{r_brace} = Z{sub ab} where the matrix Z appearing in the r.h.s. is the most general symmetric matrix. A complex generalized supersymmetry algebra is expressed in terms of complex spinors Qa and their complex conjugate Q* a. The most general (with a saturated r.h.s.) algebra is in this case given by {l_brace}Q{sub a},Q{sub b}{r_brace} P{sub ab}{l_brace}Q*{sub a}, Q*{sub b}{r_brace} = P*{sub ab}{l_brace}Q{sub a},Q*{sub b}{r_brace} = R{sub ab} where the matrix Pab is symmetric, while Rab is hermitian. The bosonic right hand side can be expressed in terms of the rank-k totally antisymmetric tensors P{sub ab} {sigma}k(C{gamma}{sub [{mu}}{sub 1...{mu}}{sub k]}){sub ab}P{sup [{mu}{sup 1...{mu}{sup k}]}.The decomposition in terms of anti-symmetric tensors for any space-time up to dimension D = 13 is presented. Real type, complex type, and quaternionic type space-times are classified. Any restriction on the saturated bosonic generators that allows all possible combinations of these tensors is in principle admissible by a Lorenz-covariant requirement. We investigate division algebra constraints and their influence on physical models. High spin theory models are presented as examples of the applications of such models.

  11. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  12. Generalized constructive tree weights

    SciTech Connect (OSTI)

    Rivasseau, Vincent E-mail: adrian.tanasa@ens-lyon.org; Tanasa, Adrian E-mail: adrian.tanasa@ens-lyon.org

    2014-04-15

    The Loop Vertex Expansion (LVE) is a quantum field theory (QFT) method which explicitly computes the Borel sum of Feynman perturbation series. This LVE relies in a crucial way on symmetric tree weights which define a measure on the set of spanning trees of any connected graph. In this paper we generalize this method by defining new tree weights. They depend on the choice of a partition of a set of vertices of the graph, and when the partition is non-trivial, they are no longer symmetric under permutation of vertices. Nevertheless we prove they have the required positivity property to lead to a convergent LVE; in fact we formulate this positivity property precisely for the first time. Our generalized tree weights are inspired by the Brydges-Battle-Federbush work on cluster expansions and could be particularly suited to the computation of connected functions in QFT. Several concrete examples are explicitly given.

  13. Office of Inspector General

    Energy Savers [EERE]

    Office of Inspector General Office of Audits and Inspections Work Plan for FY 2013 Audits Central Audits Division  Ecotality  Funding Overlap  Follow-up on Smart Grid Investment Grant  DOE's Loan Program Office's Portfolio Management  Office of Fossil Energy's Regional Carbon Sequestration Partnerships  Advanced Manufacturing Office's Combined Heat and Power Systems  DOE's Management of Contaminated Non-EM Facilities  Unneeded Real Estate  Review of For-Profit Grantees

  14. General Employee Radiological Training

    Energy Savers [EERE]

    _______ Change Notice 1 June 2009 DOE HANDBOOK GENERAL EMPLOYEE RADIOLOGICAL TRAINING U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Not Measurement Sensitive This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ Change 1 DOE-HDBK-1131-2007 Original Change Part 2 page 5 The average annual radiation dose to a

  15. General Employee Radiological Training

    Energy Savers [EERE]

    DOE HANDBOOK GENERAL EMPLOYEE RADIOLOGICAL TRAINING U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Not Measurement Sensitive This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ DOE-HDBK-1131-2007 iii Foreword This Handbook describes an implementation process for core training as recommended in chapter 14,

  16. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals (GUPs) Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in the tables, for additional information about the beamline. You can

  17. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  18. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  19. Studies of beam halo formation in the 12GeV CEBAF design

    SciTech Connect (OSTI)

    Yves Roblin; Arne Freyberger

    2007-06-01

    Beam halo formation in the beam transport design for the Jefferson Lab 12GeV upgrade was investigated using 12GeV beam transport models as well as data from 6GeV CEBAF operations. Various halo sources were considered; these covered both nuclear interactions with beam gas as well as optics-related effects such as non linearities in the magnetic fields of the transport elements. Halo due to beam gas scattering was found to be less of a problem at 12GeV compared to the 6GeV machine. Halo due to non linear effects of magnetic elements was characterized as a function of beam orbit and functional forms of the distribution were derived. These functional forms were used as inputs in subsequent detector optimizations studies.

  20. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect (OSTI)

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  1. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  2. PEMP General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3-A - 01/01/13 to 06/30/13 WTP Contract No. DE-AC27-01RV14136 Page 1 WTP PERFORMANCE EVALUATION & MEASUREMENT PLAN - PERIOD 2013-A TABLE OF CONTENTS Num ber PEMP General Information A Introduction 2 B Roles and Responsibilities 3 C Process and Schedule 5 D Contractor Self-Assessment 5 E PEMP Numbering System and Definitions 6 F Performance Periods 7 G Incentive Ratings and Definitions 7 Attachment A - Incentive B.1 - Award Fee - Project Management Incentive 7 B.1 Aw ard Fee - Project Managem

  3. PEMP General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2-B - 07/01/12 to 12/31/12 WTP Contract No. DE-AC27-01RV14136 Page 1 WTP PERFORMANCE EVALUATION & MEASUREMENT PLAN - PERIOD 2012-B TABLE OF CONTENTS Num ber PEMP General Information A Introduction 2 B Roles and Responsibilities 3 C Process and Schedule 5 D Contractor Self-Assessment 5 E PEMP Numbering System and Definitions 6 F Performance Periods 7 G Incentive Ratings and Definitions 7 Attachment A - Incentive B.1 - Award Fee - Project Management Incentive 8 B.1 Aw ard Fee - Project Managem

  4. NRC (Nuclear Regulatory Commission) staff evaluation of the General Electric Company Nuclear Reactor Study (''Reed Report'')

    SciTech Connect (OSTI)

    1987-07-01

    In 1975, the General Electric Company (GE) published a Nuclear Reactor Study, also referred to as ''the Reed Report,'' an internal product-improvement study. GE considered the document ''proprietary'' and thus, under the regulations of the Nuclear Regulatory Commission (NRC), exempt from mandatory public disclosure. Nonetheless, members of the NRC staff reviewed the document in 1976 and determined that it did not raise any significant new safety issues. The staff also reached the same conclusion in subsequent reviews. However, in response to recent inquiries about the report, the staff reevaluated the Reed Report from a 1987 perspective. This re-evaluation, documented in this staff report, concluded that: (1) there are no issues raised in the Reed Report that support a need to curtail the operation of any GE boiling water reactor (BWR); (2) there are no new safety issues raised in the Reed Report of which the staff was unaware; and (3) although certain issues addressed by the Reed Report are still being studied by the NRC and the industry, there is no basis for suspending licensing and operation of GE BWR plants while these issues are being resolved.

  5. Results from the Operational Testing of the General Electric Smart Grid Capable Electric Vehicle Supply Equipment (EVSE)

    SciTech Connect (OSTI)

    Richard Barney Carlson; Don Scoffield; Brion Bennett

    2013-12-01

    The Idaho National Laboratory conducted testing and analysis of the General Electric (GE) smart grid capable electric vehicle supply equipment (EVSE), which was a deliverable from GE for the U.S. Department of Energy FOA-554. The Idaho National Laboratory has extensive knowledge and experience in testing advanced conductive and wireless charging systems though INL’s support of the U.S. Department of Energy’s Advanced Vehicle Testing Activity. This document details the findings from the EVSE operational testing conducted at the Idaho National Laboratory on the GE smart grid capable EVSE. The testing conducted on the EVSE included energy efficiency testing, SAE J1772 functionality testing, abnormal conditions testing, and charging of a plug-in vehicle.

  6. General Motors | Open Energy Information

    Open Energy Info (EERE)

    Motors Jump to: navigation, search Name: General Motors Place: Detroit, MI Website: www.generalmotors.com References: General Motors1 Information About Partnership with NREL...

  7. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  8. Parity Violation Inelastic Scattering Experiments at 6 GeV and 12 GeV Jefferson Lab

    SciTech Connect (OSTI)

    Sulkosky, Vincent A.; et. al.,

    2015-03-01

    We report on the measurement of parity-violating asymmetries in the deep inelastic scattering and nucleon resonance regions using inclusive scattering of longitudinally polarized electrons from an unpolarized deuterium target. The effective weak couplings C$_{2q}$ are accessible through the deep-inelastic scattering measurements. Here we report a measurement of the parity-violating asymmetry, which yields a determination of 2C$_{2u}$ - C$_{2d}$ with an improved precision of a factor of five relative to the previous result. This result indicates evidence with 95% confidence that the 2C$_{2u}$ - C$_{2d}$ is non-zero. This experiment also provides the first parity-violation data covering the whole resonance region, which provide constraints on nucleon resonance models. Finally, the program to extend these measurements at Jefferson Lab in the 12 GeV era using the Solenoidal Large Intensity Device was also discussed.

  9. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Broader source: Energy.gov [DOE]

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  10. News From the 2012 Turbine Technology Symposium | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    There were three categories: 1) General overview lectures on VAATE programs (ADVENT, AATE, HEETE, STELR, VCAT) by government organizations (USAF, ARFL, AFMC, US Army, ONR, DARPA, ...

  11. GE Lighting Solutions: Noncompliance Determination (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards.

  12. GE Lighting Solutions: Proposed Penalty (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S.

  13. CONSTRAINING THE DISTRIBUTION OF DARK MATTER IN THE INNER GALAXY WITH AN INDIRECT DETECTION SIGNAL: THE CASE OF A TENTATIVE 130 GeV {gamma}-RAY LINE

    SciTech Connect (OSTI)

    Yang Ruizhi; Feng Lei; Li Xiang; Fan Yizhong

    2013-06-20

    Dark matter distribution in the very inner region of our Galaxy is still debated. In N-body simulations, a cuspy dark matter halo density profile is favored. Several dissipative baryonic processes, however, are found to be able to significantly flatten dark matter distribution, and a cored dark matter halo density profile is possible. Baryons dominate the gravitational potential in the inner Galaxy, hence a direct constraint on the abundance of dark matter particles is rather challenging. Recently, a few groups have identified a tentative 130 GeV line signal in the Galactic center, which could be interpreted as the signal of dark matter annihilation. Using current 130 GeV line data and adopting the generalized Navarro-Frenk-White profile of the dark matter halo-local dark matter density {rho}{sub 0} = 0.4 GeV cm{sup -3} and r{sub s} = 20 kpc-we obtain a 95% confidence level lower (upper) limit on the inner slope of dark matter density distribution, {alpha} = 1.06 (the cross section of dark matter annihilation into {gamma}-rays ({sigma}v){sub {chi}{chi}{sub {yields}{sub {gamma}{gamma}}}} = 1.3 Multiplication-Sign 10{sup -27} cm{sup 3} s{sup -1}). Such a slope is consistent with the results of some N-body simulations and, if the signal is due to dark matter, suggests that baryonic processes may be unimportant.

  14. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  15. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  16. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  17. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.

  18. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  19. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  20. Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent

    Office of Scientific and Technical Information (OSTI)

    Crystals (Journal Article) | SciTech Connect Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Citation Details In-Document Search Title: Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  1. Observation of parametric X-rays produced by 400 GeV/c protons in bent

    Office of Scientific and Technical Information (OSTI)

    crystals (Journal Article) | SciTech Connect parametric X-rays produced by 400 GeV/c protons in bent crystals Citation Details In-Document Search Title: Observation of parametric X-rays produced by 400 GeV/c protons in bent crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  2. Influence of Y substitutions on the magnetism of Gd5Ge4 (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Influence of Y substitutions on the magnetism of Gd5Ge4 Citation Details In-Document Search Title: Influence of Y substitutions on the magnetism of Gd5Ge4 The interrelation between the specific crystallographic positions and their influence on the magnetism of neighboring atoms is examined from first principles electronic structure calculations using the Gd{sub 5}Ge{sub 4} compound as a model system. The predicted preferences of the specific occupations by nonmagnetic yttrium

  3. Research Perspectives at Jefferson Lab: 12 GeV and Beyond

    SciTech Connect (OSTI)

    Kees de Jager

    2002-09-01

    The plans for upgrading the CEBAF accelerator at Jefferson Lab to 12 GeV are presented. The research program supporting that upgrade are illustrated with a few selected examples. The instrumentation under design to carry out that research program is discussed. Finally, a conceptual design of a future upgrade which combines a 25 GeV fixed-target facility and an electron-ion collider facility at a luminosity of up to 10{sup 35}cm{sup -2}s{sup -1} and a CM energy of over 40 GeV.

  4. Exclusive electroproduction of strange mesons with JLab 12 GeV (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Exclusive electroproduction of strange mesons with JLab 12 GeV Citation Details In-Document Search Title: Exclusive electroproduction of strange mesons with JLab 12 GeV We summarize the physics topics which can be addressed by measurements of high-Q^2 exclusive electroproduction of strange mesons, gamma* N -> phi N, K* Lambda, K Lambda, K Sigma, at Jefferson Lab with 11 GeV beam energy. The proposed investigations are aimed both at exploring the reaction mechanism

  5. JLab's 12 GeV Upgrade Project Clears Critical Hurdle | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JLab's 12 GeV Upgrade Project Clears Critical Hurdle JLab's 12 GeV Upgrade Project Clears Critical Hurdle Independent Project Review committee members Independent Project Review committee members, visiting JLab to evaluate the readiness of the 12 GeV Upgrade project, tour Hall B during their site visit. Here they view the CEBAF Large Acceptance Spectrometer as Hall B Leader Volker Burkert and Lead Engineer Dave Kashy explain the system. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas

  6. 9 GeV energy gain in a beam-driven plasma wakefield accelerator (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect 9 GeV energy gain in a beam-driven plasma wakefield accelerator Citation Details In-Document Search Title: 9 GeV energy gain in a beam-driven plasma wakefield accelerator An electron beam has gained a maximum energy of 9 GeV per particle in a 1.3 m-long electron beam-driven plasma wakefield accelerator. The amount of charge accelerated in the spectral peak was 28.3 pC, and the root-mean-square energy spread was 5.0%. The mean accelerated charge and energy gain per

  7. Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 CEBAF_Aerial.jpg Jefferson Lab will officially end 6 GeV operations of the Continuous Electron Beam Accelerator Facility during a short ceremony planned for May 18 in the Machine Control Center. This aerial photo depicts the basic outline of the tunnel housing CEBAF - the accelerator and the experimental halls. NEWPORT NEWS, VA - The U.S. Department of Energy's

  8. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect terahertz-induced response of GeSbTe phase-change materials Citation Details In-Document Search Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap

  9. Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal

    Office of Scientific and Technical Information (OSTI)

    Curvature (Journal Article) | SciTech Connect Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature Citation Details In-Document Search Title: Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon crystal has been investigated as a function of the crystal curvature with 400 GeV/c protons on the H8 beam line at the CERN Super Proton

  10. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  11. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  12. Title 1 General Provisions Chapter 5 Common Law; General Rights...

    Open Energy Info (EERE)

    General Provisions Chapter 5 Common Law; General Rights 3 V.S.A. Section 2809 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute:...

  13. Office of the Assistant General Counsel for General Law

    Broader source: Energy.gov [DOE]

    The Office of the Assistant General Counsel for General Law (GC-56) provides legal support for non-programmatic issues other than those involving procurement and intellectual property.  The office...

  14. Using 3D Printing to Redesign Santa's Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the past, we've utilized GE technology to redesign Santa's Sleigh and have asked our additive manufacturing researchers to design and print 3D printed Christmas tree...

  15. Electronic and magnetic properties of Si substituted Fe3Ge

    SciTech Connect (OSTI)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  16. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

    SciTech Connect (OSTI)

    Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali, K.; Oshima, Yasuhiro; Sun, Yun; McVittie, Jim P.; Pianetta, Piero A.; McIntyre, Paul C.; Saraswat, Krishna C.; /Stanford U., CIS

    2008-06-02

    Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

  17. HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY

    Office of Scientific and Technical Information (OSTI)

    HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY September 1972 Health and Safety Laboratory (AEC) New York, New York DISCLAIMER This report was prepared as an account of ...

  18. Ultrafast terahertz-induced response of GeSbTe phase-change materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-reso... pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. ...

  19. Physics Opportunities with the 12 GeV Upgrade at Jefferson Lab...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Program Document: Physics Opportunities with the 12 GeV Upgrade at Jefferson Lab Citation Details In-Document Search Title: Physics Opportunities ...

  20. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  1. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document ... Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report ...

  2. Multiple hadron production by 14. 5 GeV electron and positron scattering from nuclear targets

    SciTech Connect (OSTI)

    Degtyarenko, P.V.; Button-Shafer, J.; Elouadrhiri, L.; Miskimen, R.A.; Peterson, G.A.; Wang, K. ); Gavrilov, V.B.; Kossov, M.V.; Leksin, G.A.; Shuvalov, S.M. ); Dietrich, F.S.; Melnikoff, S.O.; Molitoris, J.D.; Bibber, K.V. )

    1994-08-01

    Multiple proton and pion electroproduction from nuclei are studied. Final states including at least two protons produced by the interaction of 14.5 GeV electrons and positrons with light nuclei (mainly [sup 12]C and [sup 16]O) have been measured, and compared with analogous data from [sup 40]Ar. Scattered electrons and positrons were detected in the energy transfer range from 0.2 to 12.5 GeV, and four-momentum transfer squared range from 0.1 to 5.0 GeV[sup 2]/[ital c][sup 2]. Phenomenological characteristics of the secondary hadron production cross sections such as temperature and velocity of the effective source of hadrons were found to be dependent on energy transfer to the nucleus and independent on the four-momentum transfer squared at energy transfers greater than 2 GeV.

  3. Black GE based on crystalline/amorphous core/shell nanoneedle arrays

    DOE Patents [OSTI]

    Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

    2014-03-04

    Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

  4. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    of cluster glass in the Tb117Fe52Ge113.8(1) system. The heat capacity data exhibit no evidence for long-range magnetic order, and yield a large value of Sommerfeld coefficient. ...

  5. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  6. Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Citation Details In-Document Search This content will become publicly available on April 5, 2017 Title: Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Authors: Zhu, Jian-Xin ; Janoschek, Marc ; Chaves, D. S. ; Cezar, J. C. ; Durakiewicz, Tomasz ; Ronning, Filip ; Sassa, Yasmine ; Mansson, Martin ; Scott, B. L. ; Wakeham, N. ; Bauer, Eric D. ; Thompson,

  7. GeSi strained nanostructure self-assembly for nano- and opto-electronics.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect GeSi strained nanostructure self-assembly for nano- and opto-electronics. Citation Details In-Document Search Title: GeSi strained nanostructure self-assembly for nano- and opto-electronics. Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot

  8. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI Identifier: 1249225 Resource Type: Journal Article Resource Relation: Journal Name: Proceedings of the National

  9. Strangelet search in S-W collisions at 200[ital A] GeV/[ital c

    SciTech Connect (OSTI)

    Borer, K.; Dittus, F.; Frei, D.; Hugentobler, E.; Klingenberg, R.; Moser, U.; Pretzl, K.; Schacher, J.; Stoffel, F.; Volken, W. ); Elsener, K.; Lohmann, K.D. ); Baglin, C.; Bussiere, A.; Guillaud, J.P. ); Appelquist, G.; Bohm, C.; Hovander, B.; Sellden, B.; Zhang, Q.P. )

    1994-03-07

    A search for new massive particles with a low charge to mass ratio in S-W collisions at a beam momentum of 200 GeV/[ital c] per nucleon is presented. Upper limits for the production of strangelets with a mass to charge ratio of up to 60 GeV/[ital c][sup 2] at rigidities of [plus minus]150 GV are reported.

  10. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report

  11. 1.3??m photoluminescence of Ge/GaAs multi-quantum-well structure

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A. Kudryavtsev, K. E.; Rumyantsev, V. V.; Tonkikh, A. A.; Zakharov, N. D.; Zvonkov, B. N.

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3??m at room temperature. We attribute this peak to the direct band gap transitions between ?-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  12. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  13. General Engineer | Department of Energy

    Office of Environmental Management (EM)

    Law Student Intern Program General Counsel Law Student Intern Program The Department of Energy's Office of the General Counsel is accepting applications on a rolling basis for its Law Student Intern Program. The Office of the General Counsel offers an exciting opportunity for law students to gain firsthand exposure to the fast-moving and evolving practice of energy law. The General Counsel is charged by the Secretary of Energy with the authority to determine the Department's authoritative

  14. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  15. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  16. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ˚C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (“5:3”) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102̅){sub m} || [101̅0](12̅11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu Kα diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200˚C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101̅0] (12̅11){sub m} || [010] (102̅){sub p} .

  17. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  18. The First-cycle Electrochemical Lithiation of Crystalline Ge Dopant and Orientation Dependence, and Comparison with Si

    SciTech Connect (OSTI)

    Chan, Maria K.Y.; Long, Brandon R.; Gewirth, Andrew A.; Greeley, Jeffrey P.

    2011-12-15

    We use first principles Density Functional Theory (DFT), cyclic voltammetry (CV), and Raman spectroscopy to investigate the first-cycle electrochemical lithiation of Ge in comparison with Si both high-capacity anode materials for Li ion batteries. DFT shows a significant difference in the dilute solubility of Li in Si and Ge, despite similarities in their chemical and physical properties. We attribute this difference to electronic, as opposed to elastic, effects. CV and Raman data reveal little dopant dependence in the lithiation onset voltages in Ge, unlike in Si, due to a smaller energy difference between dilute Li insertion in p-type Ge and bulk germanide formation than the corresponding difference in Si. Finally, we show that there is no orientation dependence in lithiation onset voltages in Ge. We conclude that approaches other than microstructuring are needed to fabricate effective electrodes able to take advantage of the higher rate capability of Ge compared to that of Si.

  19. Electrical properties of diluted n- and p-Si{sub 1?x}Ge{sub x} at small x

    SciTech Connect (OSTI)

    Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Abrosimov, N. V. [Leibniz Institute for Crystal Growth (Germany); Kozlovskii, V. V. [St. Petersburg Polytechnical State University (Russian Federation); Oganesyan, G. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2014-12-15

    Hall effect and conductivity measurements are taken on Si{sub 1?x}Ge{sub x} of n- and p-type at x ? 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1?x}Ge{sub x} and p-Si{sub 1?x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1?x}Ge{sub x} are discussed.

  20. General Atomics | Open Energy Information

    Open Energy Info (EERE)

    Product: General Atomics offers research, development and consulting services to the nuclear industry, including nuclear energy production, manufacturing, defense and related...