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1

Bryan Wheeler  

Energy.gov (U.S. Department of Energy (DOE))

Bryan Wheeler was an intern in the Energy Department’s Office of Science in the summer of 2011. He is currently a student at Johns Hopkins University

2

Curriculum Vitae Brooke Wheeler Brooke Wheeler  

E-Print Network (OSTI)

Curriculum Vitae Brooke Wheeler Brooke Wheeler Curriculum in Ecology, CB #3275 University of North. #12;Curriculum Vitae Brooke Wheeler Presentations: Wheeler, B., M. McKnight, G. Cumming, M. Mc@unc.edu Education University of North Carolina at Chapel Hill Graduate student in the Curriculum in Ecology Fall

Peet, Robert K.

3

Maupertuis principle, Wheeler's superspace and an invariant criterion for local instability in general relativity  

E-Print Network (OSTI)

It is tempting to raise the issue of (metric) chaos in general relativity since the Einstein equations are a set of highly nonlinear equations which may exhibit dynamically very complicated solutions for the space-time metric. However, in general relativity it is not easy to construct indicators of chaos which are gauge-invariant. Therefore it is reasonable to start by investigating - at first - the possibility of a gauge-invariant description of local instability. In this paper we examine an approach which aims at describing the dynamics in purely geometrical terms. The dynamics is formulated as a geodesic flow through the Maupertuis principle and a criterion for local instability of the trajectories may be set up in terms of curvature invariants (e.g. the Ricci scalar) of the manifold on which geodesic flow is generated. We discuss the relation of such a criterion for local instability (negativity of the Ricci scalar) to a more standard criterion for local instability and we emphasize that no inferences can...

Biesiada, M; Biesiada, Marek; Rugh, Svend E

1994-01-01T23:59:59.000Z

4

Maupertuis principle, Wheeler's superspace and an invariant criterion for local instability in general relativity  

E-Print Network (OSTI)

It is tempting to raise the issue of (metric) chaos in general relativity since the Einstein equations are a set of highly nonlinear equations which may exhibit dynamically very complicated solutions for the space-time metric. However, in general relativity it is not easy to construct indicators of chaos which are gauge-invariant. Therefore it is reasonable to start by investigating - at first - the possibility of a gauge-invariant description of local instability. In this paper we examine an approach which aims at describing the dynamics in purely geometrical terms. The dynamics is formulated as a geodesic flow through the Maupertuis principle and a criterion for local instability of the trajectories may be set up in terms of curvature invariants (e.g. the Ricci scalar) of the manifold on which geodesic flow is generated. We discuss the relation of such a criterion for local instability (negativity of the Ricci scalar) to a more standard criterion for local instability and we emphasize that no inferences can be made about global chaotic behavior from such local criteria.

Marek Biesiada; Svend E. Rugh

1994-08-25T23:59:59.000Z

5

Thomas Wheeler | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Description Departmental staffing budget; PMA scorecard; hiring metrics Last Name Wheeler First Name THomas Title Director, Workforce Analysis & Planning Division...

6

Joe Wheeler Elec Member Corp | Open Energy Information  

Open Energy Info (EERE)

Wheeler Elec Member Corp Wheeler Elec Member Corp Jump to: navigation, search Name Joe Wheeler Elec Member Corp Place Alabama Utility Id 9739 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png GENERAL POWER RATE--SCHEDULE GSA: Last 12-months use over 1,000 kW Commercial GENERAL POWER RATE--SCHEDULE GSA: Last 12-months' use < 50 kW Commercial General Power Rate--Schedule SGSB Commercial General Power Rate--Schedule SGSC Industrial General Power Rate--Schedule SGSD Industrial

7

General Counsel (WFP) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

today and in the future. General Counsel Responsible Contacts Thomas Wheeler Director, Workforce Analysis & Planning Division E-mail thomas.wheeler@hq.doe.gov Phone (202)...

8

Inspector General (WFP) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

today and in the future. Inspector General Responsible Contacts Thomas Wheeler Director, Workforce Analysis & Planning Division E-mail thomas.wheeler@hq.doe.gov Phone (202)...

9

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

10

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER FOR ADVANCE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

and technological input to the CFB technology. Foster Wheeler USA Corporation: design, engineering and construction services. 1 O * Foster Wheeler Environmental Corporation:...

11

Electric Two-Wheelers in China: Promise Progress and Potential  

E-Print Network (OSTI)

system. Nevertheless, electric two-wheelers in Westernand Eric Van Gelder. 2009. “Electric Bikes in the People’sand Luke Jones. 2010. “Electric Two-Wheelers in India and

Cherry, Christopher

2010-01-01T23:59:59.000Z

12

REQUEST BY GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4 4 Statement of Considerations REQUEST BY GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS TO INVENTIONS MADE UNDER CONTRACT NO. DE-FC26-00NT40993 ENTITLED "VARIABLE SPEED INTEGRATED INTELLIGENT BLOWER FOR HIGH EFFICIENCY HEATING VENTILATION AND AIR CONDITIONING"; W(A)-01-019, CH1066. GE has requested an advance waiver of domestic and foreign patent rights to inventions its employees may conceive or first actually reduce to practice in the performance of Contract No. DE-FC26-00NT40993. As brought out in the attached waiver petition, the scope of work includes the development and marketing of an Electronically Cormutated Motor (ECM) and fan combination. The combination utilizes a common rotating shaft and integral cooling and advanced blower fan

13

Categorical Exclusion Determination Form Proposed Action Title: (0672-1502) General Electric Global Research (GE) -  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

'Department of Energy 'Department of Energy Categorical Exclusion Determination Form Proposed Action Title: (0672-1502) General Electric Global Research (GE) - Chilled Natural Gas for At-Home Refueling Program or Field Office: Advanced Research Projects Agency - Energy LocationCs) CCity/County/State): Niskayuna, NY; Troy, NY; Columbia, MO Proposed Action Description: Funding will support efforts to develop a compressor technology for at-home refueling of natural gas vehicles. Proposed work will consist of: (1) development, synthesis, and testing of small quantities of adsorbent material at a dedicated laboratory facility on the University of Missouri campus in Columbia, MO; (2) design, fabrication (or procurement), and testing of compressor system components, including a cryocooler and an accumulator, at Chart Industries, Inc.'s commercial development and assembly site in Troy, NY; and (3) assembly

14

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Energy.gov (U.S. Department of Energy (DOE))

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

15

University Petition for General Education Variation The General Education (G.E.) program at Cal State Fullerton is the foundation of a university education. G.E. requirements  

E-Print Network (OSTI)

, students may petition for a variation to a standard G.E. requirement. IMPORTANT: This petition should plan for meeting the requirement being petitioned in the event the petition is denied. PREPARING it is prepared for review. If there is a historical TDA that has information on it that is no longer on your TDA

de Lijser, Peter

16

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

17

The Wheeler - DeWitt Quantum Geometrodynamics: its fundamental problems and tendencies of their resolution  

E-Print Network (OSTI)

The paper is devoted to fundamental problems of the Wheeler - DeWitt quantum geometrodynamics, which was the first attempt to apply quantum principles to the Universe as a whole. Our purpose is to find out the origin of these problems and follow up their consequences. We start from Dirac generalized Hamiltonian dynamics as a cornerstone on which the Wheeler - DeWitt theory is based. We remind the main statements of the famous DeWitt's paper of 1967 and discuss the flaws of the theory: the well-known problem of time, the problem of Hilbert space and others. In the concluding part of the paper we consider new tendencies and approaches to quantum geometrodynamics appeared in the last decade.

T. P. Shestakova

2008-01-31T23:59:59.000Z

18

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY (GE) FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an

19

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH, INC (GE) FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

RESEARCH, INC (GE) FOR AN RESEARCH, INC (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE AWARD NO. DE-EE0005344; W(A) 2011-072 GE has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Module Embedded Microinverter Smart Grid Ready Residential Solar Electric System." The cooperative agreement was made under the Solar Energy Grid Integration Systems - Advanced Concepts (SEGIS-AC) Funding Opportunity Announcement (DE-FOA-0000479). The objectives of SEGIS-AC are to support the development and demonstration of technologies in power electronics that reduce the overall PV system costs, allow high penetrations of solar

20

Geometric Burrows-Wheeler Transform: Linking Range Searching and Text Indexing (extended abstract)  

E-Print Network (OSTI)

We introduce a new variant of the popular Burrows-Wheeler transform (BWT) called Geometric Burrows-Wheeler Transform (GBWT). Unlike BWT, which merely permutes the text, GBWT converts the text into a set of points in ...

Chien, Yu-Feng; Hon, Wing-Kai; Shah, Rahul; Vitter, Jeffrey Scott

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Jordan Thayer and Wheeler Ruml (UNH) Suboptimal Search 1 / 28 A Survey of Suboptimal Search Algorithms  

E-Print Network (OSTI)

Jordan Thayer and Wheeler Ruml (UNH) Suboptimal Search ­ 1 / 28 A Survey of Suboptimal Search Algorithms Jordan T. Thayer and Wheeler Ruml jtd7, ruml at cs.unh.edu slides at: http://www.cs.unh.edu/~jtd7 s Outline s Not Discussed Suboptimal Bounded Suboptimal Anytime Search Summary Jordan Thayer and Wheeler

Ruml, Wheeler

22

e-mail: psharma@uh.edu L. T. Wheeler  

E-Print Network (OSTI)

P. Sharma e-mail: psharma@uh.edu L. T. Wheeler Department of Mechanical Engineering, University work, both with and without modifications, has been employed to tackle a diverse set of prob- lems: Localized thermal heating, residual strains, dislocation- induced plastic strains, phase transformations

Sharma, Pradeep

23

Wheeler, New York: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Wheeler, New York: Energy Resources Wheeler, New York: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 42.4303485°, -77.3324807° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.4303485,"lon":-77.3324807,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

24

Mt Wheeler Power, Inc | Open Energy Information  

Open Energy Info (EERE)

Nevada Nevada Utility Id 13073 Utility Location Yes Ownership C NERC Location WECC NERC WECC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png GS (Small General Service) Commercial H-1(Metered Residential or Commercial Electric Heat) Residential H-2 (Unmetered Residential Electric Heat Rate) Residential Irrigation Rate (Annual Charge) Commercial Irrigation Rate (Demand Charge) Commercial Irrigation Rate (Kilowatt Hour Rate) Commercial Irrigation Rate (Load Factor Rate) Commercial Irrigation Rate (Off-Peak Rate) Commercial

25

GE Healthcare Antibody Purification  

E-Print Network (OSTI)

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

26

The Everett-Wheeler interpretation and the open future  

SciTech Connect

I discuss the meaning of probability in the Everett-Wheeler interpretation of quantum mechanics, together with the problem of defining histories. To resolve these, I propose an understanding of probability arising from a form of temporal logic: the probability of a future-tense proposition is identified with its truth value in a many-valued and context-dependent logic. In short, probability is degree of truth. These ideas relate to traditional naive ideas of time and chance. Indeed, I argue that Everettian quantum mechanics is the only form of scientific theory that truly incorporates the perception that the future is open.

Sudbery, Anthony [Department of Mathematics, University of York, Heslington, York, YO10 5DD (United Kingdom)

2011-03-28T23:59:59.000Z

27

Wheeler, Conrad, and Figliozzi 1 A Statistical Analysis of Bicycle Rider Performance  

E-Print Network (OSTI)

Wheeler, Conrad, and Figliozzi 1 A Statistical Analysis of Bicycle Rider Performance: The impact) A Statistical Analysis of Bicycle Rider Performance: The impact of gender on riders' performance at signalized;Wheeler, Conrad, and Figliozzi 2 A Statistical Analysis of Bicycle Rider Performance: The impact of gender

Bertini, Robert L.

28

Jordan Thayer and Wheeler Ruml (UNH) Distance Estimates For Search 1 / 40 Using Distance Estimates In Heuristic Search  

E-Print Network (OSTI)

Jordan Thayer and Wheeler Ruml (UNH) Distance Estimates For Search ­ 1 / 40 Using Distance Estimates In Heuristic Search Jordan T. Thayer and Wheeler Ruml jtd7, ruml at cs.unh.edu slides at: http Search Bounded Suboptimal Anytime Search Summary Backup Slides Jordan Thayer and Wheeler Ruml (UNH

Ruml, Wheeler

29

Mt Wheeler Power, Inc (Utah) | Open Energy Information  

Open Energy Info (EERE)

Utah Utah Utility Id 13073 References Energy Information Administration.[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.0786/kWh Commercial: $0.0810/kWh Industrial: $0.0610/kWh The following table contains monthly sales and revenue data for Mt Wheeler Power, Inc (Utah). Month RES REV (THOUSAND $) RES SALES (MWH) RES CONS COM REV (THOUSAND $) COM SALES (MWH) COM CONS IND_REV (THOUSAND $) IND SALES (MWH) IND CONS OTH REV (THOUSAND $) OTH SALES (MWH) OTH CONS TOT REV (THOUSAND $) TOT SALES (MWH) TOT CONS 2009-03 11.289 138.131 203 9.256 101.356 114 1.61 12.38 14 22.155 251.867 331

30

Katherine Wheeler Mathews WVERYOR ARNOLD SCHWARZENEGGER ?he Honorable Steven Chu  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Feb 27 09 08:08p Feb 27 09 08:08p Katherine Wheeler Mathews WVERYOR ARNOLD SCHWARZENEGGER ?he Honorable Steven Chu Secretary of Energy 1000 Independence Avenue, SW Washington, DC 20585 Re: S m Enerav P r o m Assurances Dear M r . Secretary, As a condition of receiving California's share of the $3.1 billion in funding for the Stare Edergy Program (SEP) under the American Recovery and Reinvestment Act of 2009 (I3.R. 1) (ARRA). I am providing the folbwing assurances The California Public Utilities Commission bas set in place policies and procedures b promote energy efficiency. consistent with the federal statutory language conrained in H.R. 1 and their obligations to maintain just and reasonable rates, while protecting the public. California has residential aod curnrnercial building codes in place t

31

Development of Foster Wheeler's Vision 21 Partial Gasification Module  

SciTech Connect

The US Department of Energy (DOE) has awarded Foster Wheeler Development Corporation a contract to develop a partial gasification module (PGM) that represents a critical element of several potential coal-fired Vision 21 plants. When utilized for electrical power generation, these plants will operate with efficiencies greater than 60% while producing near zero emissions of traditional stack gas pollutants. The new process partially gasifies coal at elevated pressure producing a coal derived syngas and a char residue. The syngas can be used to fuel the most advanced power producing equipment such as solid oxide fuel cells or gas turbines or processed to produce clean liquid fuels or chemicals for industrial users. The char residue is not wasted; it can also be used to generate electricity by fueling boilers that drive the most advanced ultra-supercritical pressure steam turbines. The unique aspect of the process is that it utilizes a pressurized circulating fluidized bed partial gasifier and does not attempt to consume the coal in a single step. To convert all the coal to syngas in a single step requires extremely high temperatures ({approx} 2500 to 2800F) that melt and vaporize the coal and essentially drive all coal ash contaminants into the syngas. Since these contaminants can be corrosive to power generating equipment, the syngas must be cooled to near room temperature to enable a series of chemical processes to clean the syngas. Foster Wheeler's process operates at much lower temperatures that control/minimize the release of contaminants; this eliminates/minimizes the need for the expensive, complicated syngas heat exchangers and chemical cleanup systems typical of high temperature gasification. By performing the gasification in a circulating bed, a significant amount of syngas can still be produced despite the reduced temperature and the circulating bed allows easy scale up to large size plants. Rather than air, it can also operate with oxygen to facilitate sequestration of stack gas carbon dioxide gases for a 100% reduction in greenhouse gas emissions. The amount of syngas and char produced by the PGM can be tailored to fit the production objectives of the overall plant, i.e., power generation, clean liquid fuel production, chemicals production, etc. Hence, PGM is a robust building block that offers all the advantages of coal gasification but in a more user friendly form; it is also fuel flexible in that it can use alternative fuels such as biomass, sewerage sludge, etc. This paper describes the test program and pilot plant that will be used to develop the PGM.

Robertson, A.

2001-11-06T23:59:59.000Z

32

The future of electric two-wheelers and electric vehicles in China  

E-Print Network (OSTI)

2001. Life cycle assessment of electric bike application inSystems. Cherry, C. , 2007. Electric Two-Wheelers in China:2007. 2006 Analysis of Electric Bike Market (2006 China

Weinert, Jonathan X.; Ogden, Joan M.; Sperling, Dan; Burke, Andy

2008-01-01T23:59:59.000Z

33

GIZ Sourcebook Module 4c: Two and Three Wheelers | Open Energy...  

Open Energy Info (EERE)

of the developing world. The consideration of two- and three-wheelers is divided into two broad categories: transport system issues in cities with high shares of passenger trips...

34

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER FOR ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FOSTER WHEELER FOR ADVANCE WAIVER OF FOSTER WHEELER FOR ADVANCE WAIVER OF WORLDWIDE RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER A PROPOSED SUBCONTRACT UNDER COOPERATIVE AGREEMENT NO. DE-FC21-90MC27403 BETWEEN DOE AND JACKSONVILLE ELECTRIC AUTHORITY [DOE DOCKET NO. W(A)-97-028; ORO-669] The Department of Energy (DOE) and the Jacksonville Electric Authority (JEA) have entered into a novation agreement whereby JEA has become the signatory to and Participant: in Coopera- tive Agreement No. DE-FC21-90MC27403. The City of Tallahassee (COT) was the original Participant in this Cooperative Agreement based on a proposal submitted by COT under the Round 1 Clean Coal Technology (CCT) Program Opportunity Notice (PON). Foster Wheeler Power Systems is a proposed subcontractor and technology vendor under the cooperative

35

Virtual Compton Scattering and the Generalized Polarizabilities of the Proton at Q^2=0.92 and 1.76 GeV^2  

SciTech Connect

Virtual Compton Scattering (VCS) on the proton has been studied at Jefferson Lab using the exclusive photon electroproduction reaction (e p --> e p gamma). This paper gives a detailed account of the analysis which has led to the determination of the structure functions P{sub LL}-P{sub TT}/epsilon and P{sub LT}, and the electric and magnetic generalized polarizabilities (GPs) alpha{sub E}(Q{sup 2}) and beta{sub M}(Q{sup 2}) at values of the four-momentum transfer squared Q{sup 2} = 0.92 and 1.76 GeV{sup 2}. These data, together with the results of VCS experiments at lower momenta, help building a coherent picture of the electric and magnetic GPs of the proton over the full measured Q{sup 2}-range, and point to their non-trivial behavior.

Helene Fonvieille, Geraud Laveissiere, Natalie Degrande, Stephanie Jaminion, Christophe Jutier, Luminita Todor, L. Van Hoorebeke, Bryon Anderson, Konrad Aniol, Kathleen Arundell, Gerard Audit, Leonard Auerbach, F. Baker, Maud Baylac, J. Berthot, Pierre Bertin, William Bertozzi, Louis Bimbot, Werner Boeglin, Edward Brash, Vincent Breton, Herbert Breuer, Etienne Burtin, John Calarco, Lawrence Cardman, Christian Cavata, Jian-Ping Chen, Eugene Chudakov, Evaristo Cisbani, Daniel Dale, Cornelis De Jager, Raffaele De Leo, Alexandre Deur, Nicole D'Hose, Gail Dodge, John Domingo, Latifa Elouadrhiri, Martin Epstein, Lars Ewell, John Finn, Kevin Fissum, Guy Fournier, Bernhard Frois, Salvatore Frullani, Christophe Furget, Haiyan Gao, Juncai Gao, Franco Garibaldi, Ashot Gasparian, Shalev Gilad, Ronald Gilman, Oleksandr Glamazdin, Charles Glashausser, Javier Gomez, Viktor Gorbenko, Pierre Guichon, Jens-Ole Hansen, Richard Holmes, Maurik Holtrop, Calvin Howell, Garth Huber, Charles Hyde, Sebastien Incerti, Mauro Iodice, Johann Jardillier, Mark Jones, Seigo Kato, James Kelly, Armen Ketikyan, Mohammad Khayat, Kouichi Kino, Serge Kox, Laird Kramer, Krishna Kumar, Gerfried Kumbartzki, Michael Kuss, Antonio Leone, John LeRose, Richard Lindgren, Nilanga Liyanage, George Lolos, Kazushige Maeda, Sergey Malov, D. Manley, Claude Marchand, Dominique Marchand, Demetrius Margaziotis, Pete Markowitz, Jacques Marroncle, Jacques Martino, Kathy McCormick, James McIntyre, Surik Mehrabyan, Fernand Merchez, Zein-Eddine Meziani, Robert Michaels, Jean Mougey, Sirish Nanda, Amra Offermann, Zisis Papandreou, Charles Perdrisat, R. Perrino, Gerassimos Petratos, Stephane Platchkov, Roman Pomatsalyuk, David Prout, Vina Punjabi, Thierry Pussieux, Gilles Quemener, Ronald Ransome, Oliver Ravel, Jean-Sebastien Real, Yves Roblin, David Rowntree, Gary Rutledge, Paul Rutt, Arunava Saha, Teijiro Saito, Adam Sarty, Tim Smith, Paul Souder, Riad Suleiman, Jeffrey Templon, Tatsuo Terasawa, Raphael Tieulent, Egle Tomasi, Hiroaki Tsubota, Hiroaki Ueno, Paul Ulmer, Guido Urciuoli, Marc Vanderhaeghen, Rob van der Meer, R.Van De Vyver, Pascal Vernin, Branislav Vlahovic, Hakob Voskanyan, Eric Voutier, John Watson, Lawrence Weinstein, Krishni Wijesooriya, Richard Wilson, Bogdan Wojtsekhowski, Dan Zainea, Zilu Zhou, Rachele Di Salvo

2012-07-01T23:59:59.000Z

36

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9 9 STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS DOE COOPERATIVE AGREEMENT NO. DE-FC26- 03NT41865; W(A)-03-052, CH1169 The Petitioner, Foster Wheeler (FW), was awarded this cooperative agreement for the performance of work entitled, "Ammonia-Free NO, Control System." The purpose of the cooperative agreement is to achieve very low levels of NO, emissions from pulverized coal fired boiler systems by employing a novel system level integration between the PC combustion process and flue gas NOx reduction. Catalyst formulations successful in the automotive applications will be evaluated both analytically and empirically for their use in PC power plants. This knowledge, combined with prior catalyst research for power plant applications conducted at Lehigh University,

37

Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility | Open  

Open Energy Info (EERE)

Hot Springs Pool & Spa Low Temperature Geothermal Facility Hot Springs Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility Facility Wheeler Hot Springs Sector Geothermal energy Type Pool and Spa Location Ojai, California Coordinates 34.4480495°, -119.242889° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

38

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

39

Schrödinger-Wheeler-DeWitt equation in chaplygin gas FRW cosmological model  

E-Print Network (OSTI)

We present a chaplygin gas Friedmann-Robertson-Walker quantum cosmological model. In this work the Schutz's variational formalism is applied with positive, negative, and zero constant spatial curvature. In this approach the notion of time can be recovered. These give rise to Schr\\"odinger-Wheeler-DeWitt equation for the scale factor. We use the eigenfunctions in order to construct wave packets for each case. We study the time dependent behavior of the expectation value of the scale factor, using the many-worlds interpretations of quantum mechanics.

P. Pedram; S. Jalalzadeh; S. S. Gousheh

2007-05-24T23:59:59.000Z

40

Building | GE Global Research  

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Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

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41

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

42

GE Research and Development | GE Global Research  

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a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

43

Working at GE Global Research | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

44

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

45

GE_Order_and_Compromise_Agreement.pdf  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

46

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

47

Curing | GE Global Research  

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this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

48

GE Global Research  

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geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

49

Inventors Behind General Electric | GE Global Research  

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Senior Principal EngineerDirector Advanced Computing Meet Rick Ricardo Hernandez Pereira Combustion Engineer - Turbines & Reciprocating Engines Bioenergy Systems Meet Ricardo...

50

Inventors Behind General Electric | GE Global Research  

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Ricardo Hernandez Pereira Ricardo Hernandez Pereira Combustion Engineer - Turbines & Reciprocating Engines Bioenergy Systems "Contemporary machines perform in ways early designers...

51

Inventors Behind General Electric | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Leao Lead Engineer Smart Systems CoE "The resources are available to those who have the creativity. We all have the ability to turn knowledge into something amazing." -Bruno Leao...

52

Inventors Behind General Electric | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

load modeling for dynamic simulations Special Aspects of AC Filter Design for HVDC Systems Thyristor and Gate-Controlled Series Capacitors: A Comparison of Components...

53

GE and Quirky | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

54

Powering | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

55

Predix | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

56

Type B Accident Investigation of the April 8, 2003, Electrical Arc Blast at the Foster Wheeler Environmental Corporation TRU Waste Processing Facility, Oak Ridge, Tennessee  

Energy.gov (U.S. Department of Energy (DOE))

At approximately 0330 hours on April 8, 2003, a phase-to-phase arc blast occurred in the boiler electrical control panel at the Foster Wheeler Environmental Corporation (FWENC) Transuranic (TRU) Waste Processing Facility. The boiler was providing steam for the evaporator and was reportedly operating at about 10% of its capacity.

57

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

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GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

58

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

59

Carousolar | GE Global Research  

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Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

60

Be a part of something bigger than yourself GE Healthcare  

E-Print Network (OSTI)

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

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61

Cloud-Based Air Traffic Management Announcement | GE Global Research  

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Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

62

Update of waste fuel firing experience in Foster Wheeler circulating fluidized bed boilers  

SciTech Connect

As the costs and availability of more conventional fuels continue to escalate, more and more customers are investigating and choosing operation with lower cost waste or alternative fuels. Details of units firing waste or alternative fuels which have been in active service for many years are summarized, and the fuel analyses are given. This chapter gives a general overview of the projects that are or will be firing waste or alternative fuels, namely, the Mt. Carmel Manitowoc, NISCO and HUNOSA units. The experience of the four operating units has demonstrated that waste and alternative fuels can be successfully and economically burned in an atmosphere circulating fluidized bed unit while meeting permitted emission requirements.

Abdulally, I.F.; Reed, K.A.

1993-12-31T23:59:59.000Z

63

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

64

Colon Cancer Mapping | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

65

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

66

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

67

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

68

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

69

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network (OSTI)

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

70

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

71

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

72

ORNL Partners with GE on New Hybrid | ornl.gov  

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ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

73

Natural Gas Locomotive | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

74

New Medical Technology | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

75

Hospital Sterile Processing | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

76

Oil & Gas Technology Center | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

77

GE Innovation and Manufacturing in Europe | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

78

GE Global Research Europe, Munich, Germany | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

79

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

80

MEMS Relays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

82

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

83

General Electric Company Oahu Wind Integration Study  

E-Print Network (OSTI)

General Electric Company Oahu Wind Integration Study Final Report Delivered to: Richard Rocheleau-956-8346 e-mail: rochelea@hawaii.edu General Electric Company (in alphabetical order) Sebastian Achilles Date: December 16 2010 #12;2 Legal Notices This report was prepared by the General Electric Company (GE

84

GE PowerPoint Template  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

85

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

86

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

87

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

88

General Education GENERAL EDUCATION  

E-Print Network (OSTI)

, the pursuit of truth, the intellectual and ethical development of students, and the general well the consequences of human actions. E. Cross-Cultural Awareness Demonstrate the ability to critically compare

Stuart, Steven J.

89

Clean Cities: National Clean Fleets Partner: GE  

NLE Websites -- All DOE Office Websites (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

90

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

91

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

92

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

93

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

94

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

95

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

96

Technology "Relay Race" Against Cancer | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

97

EPS HEP2005, Lisboa, 21.-27.07.2005General Search for New Phenomena at HERA and a Search for Magnetic Monopoles, Ana Dubak 1 General Search for New Phenomena  

E-Print Network (OSTI)

EPS HEP2005, Lisboa, 21.-27.07.2005General Search for New Phenomena at HERA and a Search for new phenomena at HERA · Direct Search for Magnetic Monopoles #12;EPS HEP2005, Lisboa, 21, have we missed something? General search ± e p 27.6 GeV (till 1998 EP = 820 GeV ) s = 320 GeV HERA

98

Crowdsourcing Software Award | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

99

Work and Life Balance | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

100

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

102

Exhaust emissions of volatile organic compounds of powered two-wheelers: Effect of cold start and vehicle speed. Contribution to greenhouse effect and tropospheric ozone formation  

Science Journals Connector (OSTI)

Abstract Powered two-wheeler (PTW) vehicles complying with recent European type approval standards (stages Euro 2 and Euro 3) were tested on chassis dynamometer in order to measure exhaust emissions of about 25 volatile organic compounds (VOCs) in the range C1–C7, including carcinogenic compounds as benzene and 1,3-butadiene. The fleet consists of a moped (engine capacity ? 50 cm3) and three fuel injection motorcycles of different engine capacities (150, 300 and 400 cm3). Different driving conditions were tested (US FPT cycle, constant speed). Due to the poor control of the combustion and catalyst efficiency, moped is the highest pollutant emitter. In fact, fuel injection strategy and three way catalyst with lambda sensor are able to reduce VOC motorcycles' emission of about one order of magnitude with respect to moped. Cold start effect, that is crucial for the assessment of actual emission of \\{PTWs\\} in urban areas, was significant: 30–51% of extra emission for methane. In the investigated speed range, moped showed a significant maximum of VOC emission factor at minimum speed (10 km/h) and a slightly decreasing trend from 20 to 60 km/h; motorcycles showed on the average a less significant peak at 10 km/h, a minimum at 30–40 km/h and then an increasing trend with a maximum emission factor at 90 km/h. Carcinogenic \\{VOCs\\} show the same pattern of total VOCs. Ozone Formation Potential (OFP) was estimated by using Maximum Incremental Reactivity scale. The greatest contribution to tropospheric ozone formation comes from alkenes group which account for 50–80% to the total OFP. VOC contribution effect on greenhouse effect is negligible with respect to CO2 emitted.

M. Antonietta Costagliola; Fabio Murena; M. Vittoria Prati

2014-01-01T23:59:59.000Z

103

GE Appliances and Lighting Home Energy Solutions  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

104

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

105

The Canonical Lagrangian Approach To Three-Space General Relativity  

E-Print Network (OSTI)

We study the action for the three-space formalism of General Relativity, better known as the BF\\'O (Barbour--Foster--\\'O Murchadha) action, which is a square-root BSW (Baierlein--Sharp--Wheeler) Jacobi-type action. In particular, we explore the (pre)symplectic structure by pulling it back via a Legendre map to the tangent bundle of the configuration space of this action. With it we attain the canonical Lagrangian vector field which generates the gauge transformations (3-diffeomorphisms) and the true physical evolution of the system. This vector field encapsulates all the dynamics of the system. We also discuss briefly the observables and perennials for this theory. We then present a symplectic reduction of the constrained phase space and a projection from this space to superspace.

Shyam, Vasudev

2012-01-01T23:59:59.000Z

106

Ge atom distribution in buried dome islands  

SciTech Connect

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

107

membrane-ge | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

108

Robotic Wind Turbine Inspection | GE Global Research  

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Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

109

Advanced Propulsion Systems | GE Global Research  

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primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

110

One Young World Summit |GE Global Research  

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photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

111

Nanoscale Material Properties | GE Global Research  

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Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

112

Happy Pi Day! | GE Global Research  

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is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

113

Patricia C. Irwin | Inventors | GE Global Research  

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50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

114

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

115

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

116

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network (OSTI)

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

117

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

118

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

119

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

120

General growth mixture modeling for randomized preventive interventions  

Science Journals Connector (OSTI)

......University of South Florida, FL, USA KATHERINE MASYN, BOOIL JO University of California...TURKKAN, J. S., FORD, C. AND WHEELER, L.(1993). The short-term impact...WERTHAMER-LARSSON, L., KELLAM, S. G. AND WHEELER, L.(1991). Effect of first-grade......

Bengt Muthén; C. Hendricks Brown; Katherine Masyn; Booil Jo; Siek-Toon Khoo; Chih-Chien Yang; Chen-Pin Wang; Sheppard G. Kellam; John B. Carlin; Jason Liao

2002-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

GE Turbine Parts www.edisonmachine.com  

E-Print Network (OSTI)

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

122

Modeling of GE Appliances: Final Presentation  

SciTech Connect

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

123

General Electric Company Evaluation of Sustainable Energy Options  

E-Print Network (OSTI)

General Electric Company Evaluation of Sustainable Energy Options for the Big Island of Hawaii-West Rd, Post 109 Honolulu, HI 96822 Phone: 808-956-8346 e-mail: rochelea@hawaii.edu General Electric by General Electric Company (GE) as an account of work sponsored by the Hawaii Natural Energy Institute (HNEI

124

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

125

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

126

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

127

Ge-on-Si laser for silicon photonics  

E-Print Network (OSTI)

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

128

Science as Art: Jet Engine Airflow | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

129

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

130

Engineer Receives UMass "Salute To Service" Award | GE Global...  

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GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

131

General Electric | Open Energy Information  

Open Energy Info (EERE)

Electric Electric Jump to: navigation, search Name General Electric Place Fairfield, Connecticut Zip 06828 Stock Symbol GE Year founded 1892 Number of employees 10,000+"+" is not declared as a valid unit of measurement for this property. Website http://www.ge.com/ Coordinates 41.1758333°, -73.2719444° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.1758333,"lon":-73.2719444,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

132

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

133

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

134

General Engineers  

U.S. Energy Information Administration (EIA) Indexed Site

General Engineers General Engineers The U.S. Energy Information Administration (EIA) within the Department of Energy has forged a world-class information program that stresses quality, teamwork, and employee growth. In support of our program, we offer a variety of profes- sional positions, including the General Engineer, whose work is associated with analytical studies and evaluation projects pertaining to the operations of the energy industry. Responsibilities: General Engineers perform or participate in one or more of the following important functions: * Design modeling systems to represent energy markets and the physical properties of energy industries * Conceive, initiate, monitor and/or conduct planning and evaluation projects and studies of continuing and future

135

12 GeV Upgrade | Jefferson Lab  

NLE Websites -- All DOE Office Websites

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

136

Working in the Cleanroom | GE Global Research  

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The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

137

Metal MEMS Devices | GE Global Research  

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MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

138

Adam Rasheed | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

139

Air Traffic Operations | GE Global Research  

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Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

140

Andrew Gorton | Inventors | GE Global Research  

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"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

GE's Christine Furstoss Named to NACIE  

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companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

142

Jie Shen | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

143

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

144

The Argonne National Laboratory 6–7 GeV synchrotron X-ray source  

Science Journals Connector (OSTI)

In 1984–1985 the Argonne National Laboratory undertook a design study of a 6–7 GeV synchrotron radiation source. The effort led to a construction proposal which was reviewed early this year and recommended for funding by the US Department of Energy. This paper gives a general description of this Argonne synchrotron X-ray source.

Lee C. Teng

1987-01-01T23:59:59.000Z

145

General Thermodynamics  

Science Journals Connector (OSTI)

... principally in the Journal of the Franklin Institute. These ideas relate to a study of thermodynamics from what the author calls a generalized point of view, which concerns itself with ... from what the author calls a generalized point of view, which concerns itself with the thermodynamics of metastable states and irreversible processes as wall as with the stable states and reversible ...

R. W. HAYWOOD

1956-06-02T23:59:59.000Z

146

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

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the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

147

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

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to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

148

GE Opens New Global R&D Center in Brazil - GE Global Research  

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Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

149

All General Counsel Reports | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3, 2012 3, 2012 GE Appliances: Order (2012-SE-1403) DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. October 2, 2012 Winix: Order (2012-CE-3607) DOE ordered Cloud 9 Marketing, Inc. d/b/a Winix, Inc., to pay a $8,000 civil penalty after finding Winix had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards. October 2, 2012 Royal Centurion: Order (2012-CE-3608) DOE ordered Royal Centurion, Inc., to pay a $8,000 civil penalty after finding Royal Centurion had failed to certify that certain models of

150

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

151

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

152

Accelerator experiments contradicting general relativity  

E-Print Network (OSTI)

The deflection of gamma-rays in Earth's gravitational field is tested in laser Compton scattering at high energy accelerators. Within a formalism connecting the bending angle to the photon's momentum it follows that detected gamma-ray spectra are inconsistent with a deflection magnitude of 2.78 nrad, predicted by Einstein's gravity theory. Moreover, preliminary results for 13-28 GeV photons from two different laboratories show opposite - away from the Earth - deflection, amounting to 33.8-0.8 prad. I conclude that general relativity, which describes gravity at low energies precisely, break down at high energies.

Vahagn Gharibyan

2014-07-12T23:59:59.000Z

153

Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters  

SciTech Connect

Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

Yuan, H. K.; Chen, H., E-mail: chenh@swu.edu.cn; Kuang, A. L.; Tian, C. L.; Wang, J. Z. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)] [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2013-11-28T23:59:59.000Z

154

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

155

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

156

General Information  

NLE Websites -- All DOE Office Websites (Extended Search)

ASD General Information ASD General Information APS Resources & Information A list of useful links for APS staff and users. APS Technical Publications Links to APS technical publications. APS Publications Database The official and comprehensive source of references for APS-related journal articles, conference papers, book chapters, dissertations, abstracts, awards, invited talks, etc. Image Library A collection of APS images. Responsibilities & Interfaces for APS Technical Systems Descriptions of the responsibilities of APS technical groups and how they interface with one another. APS Procedures Operational procedures for the APS. APS Specifications Specifications and approvals for upgrades or changes to existing APS hardware and software. APS Radiation Safety Policy & Procedures Committee Minutes

157

Microsoft Word - 41448_GE_Enabling & IT for RAM_Factsheet_Rev01_09-03.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Power Systems GE Power Systems Fact Sheet: Enabling & IT to Increase RAM for Advanced Powerplants DOE Contract No: DE-FC26-03NT41448 I. Project Participants: A. Prime Participant: General Electric Company, General Electric Power Systems B. Sub-Award Participants: General Electric Company, Global Research General Electric Company, Aircraft Engine General Electric Company, Energy and Environmental Research Corp. General Electric Company, Energy and Industrial Services, Inc. Georgia Institute of Technology Sandia National Laboratory II Project Description: A. Objective: Advanced analytical part lifing models, advanced sensors and controls, and highly integrated information technology (IT) platforms will be demonstrated in merchant coal/IGCC (Integrated Gasification Combined Cycle) gas turbine combined cycle

158

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

159

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

160

Viscosity Measurement G.E. Leblanc  

E-Print Network (OSTI)

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

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161

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

162

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

163

Silicon Carbides in the Cleanroom | GE Global Research  

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Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

164

The Majorana Ge-76 double-beta decay project  

SciTech Connect

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

165

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

166

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

167

Inspector General  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Office of the Under Secretary for Nuclear Security Edward B. Held (Acting) Under Secretary for Nuclear Security DEPARTMENT OF ENERGY Office of the Under Secretary for Management & Performance Vacant Under Secretary for Management and Performance Office of the Under Secretary for Science & Energy Vacant Under Secretary for Science and Energy Southwestern Power Administration Bonneville Power Administration Western Area Power Administration Southeastern Power Administration U.S. Energy Information Administration Loan Programs Office Advanced Research Projects Agency - Energy General Counsel Assistant Secretary for Congressional & Intergovernmental Affairs Chief Human Capital Officer

168

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network (OSTI)

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

169

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

170

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

171

General Category  

NLE Websites -- All DOE Office Websites (Extended Search)

Sunrise and Sunset Visual Differences Sunrise and Sunset Visual Differences Name: Joey Status: other Grade: other Country: Canada Date: Spring 2012 Question: It seems that sunrise and sunset don't look symmetric. I mean that sunsets tend to have much redder skies and sunrise is usually a bit gloomier. If you see a picture, many times you can tell if its sunrise or sunset, even though I would think they should like identical, except that the sun is either going up or going down. Why do they not appear the same but in reverse? Replies: Funny you should ask as a paper just arrived which is sure to have the answer and I will read it now....... OK, the morning sky, and the sky in general, is blue due to Rayleigh scattering [which affects short wavelengths the most] of the sun light by air molecules and other microscopic particles.

172

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

173

Stable, free-standing Ge nanocrystals  

SciTech Connect

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

174

General Electric: ENERGY STAR Referral (PFSF5NFZ****) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

General Electric: ENERGY STAR Referral (PFSF5NFZ****) General Electric: ENERGY STAR Referral (PFSF5NFZ****) General Electric: ENERGY STAR Referral (PFSF5NFZ****) August 29, 2012 DOE referred the matter of General Electric ("GE") refrigerator-freezer model PFSF5NFZ**** to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. After referring this matter, DOE determined that GE was also correct that the test report calculations were incorrect given that the tested model had a variable anti-sweat heater. DOE revised its test reports accordingly; however the corrections did not impact the final determination. General Electric: ENERGY STAR Referral (PFSF5NFZ****) More Documents & Publications

175

General Electric: ENERGY STAR Referral (PFSF5NFZ****) | Department of  

NLE Websites -- All DOE Office Websites (Extended Search)

General Electric: ENERGY STAR Referral (PFSF5NFZ****) General Electric: ENERGY STAR Referral (PFSF5NFZ****) General Electric: ENERGY STAR Referral (PFSF5NFZ****) August 29, 2012 DOE referred the matter of General Electric ("GE") refrigerator-freezer model PFSF5NFZ**** to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. After referring this matter, DOE determined that GE was also correct that the test report calculations were incorrect given that the tested model had a variable anti-sweat heater. DOE revised its test reports accordingly; however the corrections did not impact the final determination. General Electric: ENERGY STAR Referral (PFSF5NFZ****) More Documents & Publications

176

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

177

STATEMENT OF CONSIDERATIONS Request by General Electric Corporate  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OF CONSIDERATIONS Request by General Electric Corporate Research and Development (GE-CRD) for an Advance Waiver of Domestic and Foreign Invention Rights under DOE Cooperative Agreement No. DE-AC26-01NT41188 W(A)-01-038, CH-1082 The Petitioner, General Electric Corporate Research and Development (GE-CRD) was awarded this cost plus fixed fee contract for the performance of work entitled, "GE/Nomadics In- Well Monitoring System for Vertical Profiling of DNAPL Contaminants." The purpose of the contract is the development and validation of an in-well monitoring system to characterize vapor- and dissolved-phase dense nonaqueous phase liquids (DNAPL), such as carbon tetrachloride and trichloroethylene (TCE), in the groundwater and vadose zones. As described in the Statement of

178

Nonstoichiometry and chemical purity effects in thermoelectric Ba 8 Ga 16 Ge 30 clathrate  

Science Journals Connector (OSTI)

Zone melting purification experiments have been carried out on the clathrate Ba 8 Ga 16 Ge 30 . The impurities present have been identified and their approximate concentrations measured. Trace impurities were determined to be approximately 240 parts per million (ppm) in the most impure sample to 17 ppm in the most pure sample. The temperature-dependent Seebeck coefficient thermal conductivity and electrical conductivity are reported as a function of sample purity as well as the room-temperature Hall coefficient. Microprobe analysis suggests that the samples are nonstoichiometric with excess Ge relative to Ga and there are indications of the presence of defects. Single-crystal x-ray investigations as well as synchrotron powderdiffraction measurements support the presence of defects but the x-ray data cannot accurately determine the relative amounts of Ga and Ge. Band-structure calculations in the generalized gradient approximation show that the measured Hall and Seebeck coefficients are consistent with a defect lattice of approximate stoichiometry Ba 8 Ga 14 Ge 31 . Although the figure of merit (ZT) is found to be the highest for the purest sample the dominant contribution to transport is conjectured to arise from deviations from the ideal stoichiometry and not impurities.

J. Daniel Bryan; Nick P. Blake; Horia Metiu; Galen D. Stucky; Bo B. Iversen; Rasmus D. Poulsen; Anders Bentien

2002-01-01T23:59:59.000Z

179

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

180

Synthesis, structural characterization and properties of SrAl{sub 4?x}Ge{sub x}, BaAl{sub 4?x}Ge{sub x}, and EuAl{sub 4?x}Ge{sub x} (x?0.3–0.4)—Rare examples of electron-rich phases with the BaAl{sub 4} structure type  

SciTech Connect

Three solid solutions with the general formula AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)?x?0.41(1)) have been synthesized via the aluminum self-flux method, and their crystal structures have been established from powder and single-crystal X-ray diffraction. They are isotypic and crystallize with the well-known BaAl{sub 4} structure type, adopted by the three AEAl{sub 4} end members. In all structures, Ge substitutes Al only at the 4e Wyckoff site. Results from X-rays photoelectron spectroscopy on EuAl{sub 4?x}Ge{sub x} and EuAl{sub 4} indicate that the interactions between the Eu{sup 2+} cations and the polyanionic framework are enhanced in the Ge-doped structure, despite the slightly elevated Fermi level. Magnetic susceptibility measurements confirm the local moment magnetism, expected for the [Xe]4f{sup 7} electronic configuration of Eu{sup 2+} and suggest strong ferromagnetic interactions at cryogenic temperatures. Resistivity data from single-crystalline samples show differences between the title compounds, implying different bonding characteristics despite the close Debye temperatures. A brief discussion on the observed electron count and homogeneity ranges for AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba) is also presented. - Graphical abstract: AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)?x?0.41(1)), three “electron-rich” phases with BaAl{sub 4} structure type have been synthesized and characterized. Display Omitted - Highlights: • Three BaAl{sub 4}-type ternary aluminum germanides have been synthesized with Eu, Sr and Ba. • Eu, Sr and Ba cations have no apparent influence on the solubility of Ge. • The Ge atoms substitute Al on one of two framework sites, thereby strengthening the interactions between the cations and the polyanionic framework.

Zhang, Jiliang; Bobev, Svilen, E-mail: bobev@udel.edu

2013-09-15T23:59:59.000Z

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181

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

182

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

183

All General Counsel Reports | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

28, 2010 28, 2010 Stiebel Eltron: Order (2010-CE-1711) DOE ordered Stiebel Eltron, Inc. to pay a $5,000 civil penalty after finding Stiebel Eltron had failed to certify that certain models of water heaters comply with the applicable energy conservation standards. September 28, 2010 Amerisink: Order (2010-CW-0710) DOE ordered Amerisink, Inc. to pay a $5,000 civil penalty after finding Amerisink had failed to certify that certain models of faucets comply with the applicable water conservation standards. September 27, 2010 GE Appliances: Order (2010-CE-2113) DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy

184

All General Counsel Reports | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8, 2010 8, 2010 Westinghouse Lighting: Notice of Allowance (2010-CE-09/1001) DOE issued a Notice of Allowance to Westinghouse Lighting Corporation allowing Westinghouse Lighting to resume distribution of product code 0521000 after Westinghouse Lighting provided new test data performed according to DOE regulations. October 7, 2010 Quietside Corp: Order (2010-CE-1710) DOE ordered Quietside Corporation to pay a $5,000 civil penalty after finding Quietside Corp. had failed to certify that certain models of water heaters comply with the applicable energy conservation standards. October 7, 2010 GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity

185

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

186

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

187

Iron meteorites with low Ga and Ge concentrations—composition, structure and genetic relationships  

Science Journals Connector (OSTI)

Twenty-one iron meteorites with Ge contents below 1 ?g/g, including nine belonging to groups IIIF and IVB, have been analyzed by instrumental neutron activation analysis (INAA) for the elements Co, Cr, As, Au, Re, Ir and W. Groups IIIF and IVB show positive correlations of Au, As and Co (IIIF only) with published Ni analyses, and negative correlations of Ir, Re, Cr (IVB only) and W (IIIF only) with Ni. On element-Ni plots, the gradients of the least squares lines are similar to those of many other groups, excluding IAB and IIICD. With the inclusion of a new member, Klamath Falls, group IIIF has the widest range of Au, As and Co contents of any group and the steepest gradients on plots of these elements against Ni. It is likely that these trends in groups IIIF and IVB were produced by fractionation of elements between solid and liquid metal, probably during fractional crystallization. It has been suggested that some of the 15 irons with groups might be related. However, the INAA data indicate that no two are as strongly related as two group members. These low-Ge irons and the members of groups IIIF, IVA and IVB tend to have low concentrations of As, Au and P, low CoNi ratios and high Cr contents. The depletion of the more volatile elements probably results from incomplete condensation into the metal from the solar nebula. The structures of low-Ge irons generally reflect fast cooling rates (20–2000 K Myr?1). When data for all iron meteorites are plotted on a logarithmic graph of cooling rate against Ge concentration and results for related irons are averaged, there is a significant negative correlation. This suggests that metal grains which inefficiently condensed Ge and other volatile elements tended to accrete into small parent bodies.

Edward R.D. Scott

1978-01-01T23:59:59.000Z

188

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

189

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

190

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

191

Biofuel Research at Brazil Center of Excellence | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

192

Meeting Energy Needs in Brazil |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

193

GE Technology to Help Canada Province Meet Growing Energy Needs  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

194

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

NLE Websites -- All DOE Office Websites (Extended Search)

Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

195

Technology makes reds "pop" in LED displays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

196

Titan propels GE wind turbine research into new territory | ornl...  

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Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

197

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

198

An in situ investigation of Si[sub x]Ge[sub 1-x] chemical vapor deposition by differential reflectance  

SciTech Connect

An investigation of the surface kinetic processes of low pressure chemical vapor deposition (LPCVD) of Si, Ge, and Si[sub x]Ge[sub 1[minus]x] was carried out using time-resolved differential reflectance measurements. The source gas (disilane, digermane, or mixtures of these two diluted in a helium carrier) was delivered to a heated substrate by a fast-acting modulated molecular jet valve. Thin film growth was studied in the range of 400-500[degrees]C on Si and Ge (001) substrates. The kinetics of chemisorption and of by-product desorption were determined from the surface differential reflectance signal obtained using p-polarized, high-stability HeNe probe laser. Both chemisorption and by-product desorption were fond to obey first-order kinetics. Chemisorption of the parent molecules was found to be relatively efficient and weakly temperature dependent. For pure Si and Ge, by-product desorption occurred through a single first-order reaction. Two first-order desorption steps were inferred for the Si[sub x]Ge[sub 1[minus]x] alloy surfaces. These reactions are believed to be H[sub 2] desorption from Si-like and Ge-like surface sites. However, the activation energy of the more rapid of these two steps actually decreases as the Si content of the film increases. Generally, the films were of high crystalline quality and were very well aligned with the substrate. Preferential incorporation of digermane into the film produced an alloy composition that was Ge-rich relative to the gas composition. The primary accomplishment of this work is the demonstration that the active surface layer of the Si[sub x]Ge[sub 1[minus]x] system can be monitored in situ by an optical probe under typical LPCVD conditions. The results indicate that the rate-limiting step in Si or Ge LPCVD obeys simple first-order kinetics. Further work is needed to understand fully the rate-limiting surface reaction in Si[sub x]Ge[sub 1[minus]x] LPCVD.

Sharp, J.W.

1992-01-01T23:59:59.000Z

199

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

200

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

All General Counsel Reports | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

97_004_FOSTER_WHEELER_CORP_Waiver_of_Domestic_and_Foreign.pdf 97_004_FOSTER_WHEELER_CORP_Waiver_of_Domestic_and_Foreign.pdf July 27, 2011 U.S. Department of Energy Order WORK FOR OTHERS (NON-DEPARTMENT OF ENERGY FUNDED WORK) July 27, 2011 WC_1995_010__PETITION_FOR_CLASS_WAIVER_for_KAISER_HILL_CO_In.pdf July 27, 2011 NBP RFI: Communications Requirements- Comments of Great River Energy Great River Energy has deployed a fully integrated IP network to 750 remote sites of our electric system, 18 remote offices and 11 electric generating facilities. The IP network transports data information for SCADA, mobile radio voice traffic, metering information, corporate data and voice traffic between office sites, protection operations for power lines, and video surveillance. July 27, 2011 Public comment re Price-Anderson Act We have just been notified of the December 31, 1997, Federal Register

202

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

203

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

204

3 GeV Injector Design Handbook  

SciTech Connect

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

205

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

206

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

207

GE Nucleus for Residential Energy Use Education, Home Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

208

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

209

The formulation of General Relativity in extended phase space as a way to its quantization  

E-Print Network (OSTI)

Our attempts to find an explanation for quantum behavior of the Early Universe appeal, as a rule, to the Wheeler - DeWitt Quantum Geometrodynamics which relies upon Hamiltonian formulation of General Relativity proposed by Arnowitt, Deser and Misner (ADM). In spite of the fact that the basic ideas of this approach were put forward about fifty years ago, even now we do not have clear understanding what Hamiltonian formulation of General Relativity must be. An evidence for it gives a recent paper by Kiriushcheva and Kuzmin [arXiv:0809.0097], where the authors claim that the formulation by ADM and that by Dirac made in his seminal work of 1958 are not equivalent. If so, we face the question what formalism should be chosen. Another problem is that we need a well-grounded procedure of constructing a generator of transformations in phase space for all gravitational variables including gauge ones. It suggests the notion of extended phase space. After analyzing the situation, we show that Hamiltonian formulation in extended phase space is a real alternative to Dirac and ADM formulations and can be constructed to be equivalent to the original (Lagrangian) formulation of General Relativity. Quantization in extended phase space is straightforward and leads to a new description of quantum Universe in which an essential place is given to gauge degrees of freedom.

T. P. Shestakova

2009-11-30T23:59:59.000Z

210

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

211

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

212

Causation, Association and Confirmation Gregory Wheeler1  

E-Print Network (OSTI)

the hypothesis that they got food poisoning from that restaurant. The hypothesis explains the evidence because-occurrence of their Tuesday stomach trouble is no evidence at all for restaurant induced food poisoning; the explanation the food served by the restaurant is a common cause of the five separate stomach ailments. Alternatively

Spirtes, Peter

213

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network (OSTI)

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

214

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

215

Tunneling images of the 5×5 surface reconstruction on Ge-Si(111)  

Science Journals Connector (OSTI)

Germanium-silicon alloys can be prepared on crystalline silicon (111) substrates and have been observed to have 5×5 surface reconstructions. We present tunneling images of this surface which show that is has strong similarities to the Si(111)7×7 reconstruction. A model related to that proposed by Takayanagi, Ytaniahiro, and Kobayashi accounts for the general features of the observed reconstruction. In addition the surface is observed to have periodic vertical modulations which indicate an ordered Ge-Si surface alloy.

R. S. Becker; J. A. Golovchenko; B. S. Swartzentruber

1985-12-15T23:59:59.000Z

216

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

217

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

218

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

219

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

220

Draft General Conformity Determination  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

I I Draft General Conformity Determination U.S. Department of the Interior Minerals Management Service MMS Cape Wind Energy Project January 2009 Final EIS Appendix I Draft General Conformity Determination Draft General Conformity Determination Cape Wind Energy Project Prepared by Minerals Management Service Herndon, VA November 2008 i TABLE OF CONTENTS 1.0 INTRODUCTION TO THE PROPOSED ACTION............................................................... 1 2.0 GENERAL CONFORMITY REGULATORY BACKGROUND .......................................... 2 2.1 GENERAL CONFORMITY REQUIREMENTS.................................................................... 2 2.2 GENERAL CONFORMITY APPLICABILITY.....................................................................

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221

General | Open Energy Information  

Open Energy Info (EERE)

Volver Pgina principal General banner.jpg Retrieved from "http:en.openei.orgwindex.php?titleGeneral&oldid519011" What links here Related changes Special pages Printable...

222

General User Proposals  

NLE Websites -- All DOE Office Websites (Extended Search)

General User Proposals Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the...

223

General User Proposals  

NLE Websites -- All DOE Office Websites (Extended Search)

Office General User Proposals Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS...

224

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

225

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

226

Intern Shares Insight Into Researchers' Minds |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

227

A Deep Dive into the Subsea Environment | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

228

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network (OSTI)

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

229

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

230

Ge-on-Si laser operating at room temperature  

E-Print Network (OSTI)

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

231

Helping Astronauts Back on Earth | GE Global Research  

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Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

232

Take a Closer Look at the Brain | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

233

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

NLE Websites -- All DOE Office Websites (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

234

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

235

Wind Turbine Transportation in Toyland | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

236

LNG Technology Is in the News | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

237

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

238

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

239

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

240

Pushing Super Materials to the Limit | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

242

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

243

Microsoft Word - 42643_GE_Hydrogen Turbine_Factsheet_Rev B_12-08-06.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

3 - Advanced IGCC/H2 Gas Turbine Development 3 - Advanced IGCC/H2 Gas Turbine Development Revision B 1 December 2006 FACT SHEET I. PROJECT PARTICIPANTS A. Prime Participant: General Electric Company, GE Energy B. Sub-Award Participant: General Electric Company, Global Research Center II. PROJECT DESCRIPTION A. Objective(s): The objective of this project is to design and develop a fuel flexible (coal derived hydrogen or syngas) gas turbine for IGCC and FutureGen type applications that meets DOE turbine performance goals. The overall DOE Advanced Power System goal is to conduct, by 2010, the research and development (R&D) necessary to produce coal-based IGCC power systems with high efficiency (45-50% (HHV)), near-zero emissions (less than 3 ppm v NOx @ 15% O 2 ) and competitive capital cost (< $1000/kW).

244

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

245

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U.S. AND FOREIGN RIGHTS UNDER CONTRACT NO. DE-FC36-95GO10099 U.S. AND FOREIGN RIGHTS UNDER CONTRACT NO. DE-FC36-95GO10099 WAIVER NO. W(A)-96-015, CH0907. The attached petition by General Electric Corporation (hereafter GE) is for an advance waiver of patent rights under Contract No. DE-FC36-95GO10099. GE requests that the Department of Energy grant an advance waiver for the domestic and foreign rights to inventions made in the performance of work under the above identified contract and in particular, for materials and processes for the production of long-chain aliphatic dicarboxylic acids (diacids) and in applications of diacids in polymeric materials. Further, that these rights vest in GE subject to the standard Advance Waiver Patent Rights Clause with the enclosed U.S. Competitiveness paragraph as previously agreed to. Additionally, GE has accepted the standard

246

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CONTRACT NO. DE- CONTRACT NO. DE- FC26-04NT42438; W(A)-05-039 CH-1321 The Petitioner, General Electric Company (GE) was awarded a cooperative agreement for the performance of work entitled, "Distributed Fiber-Optic Gas Sensing for Harsh Environments." The purpose of the cooperative agreement is the design, fabrication, evaluation and engine testing of fiber optic sensors and high-temperature optical ceramic on fused silica and sapphire fibers. This waiver is only for inventions of GE made under the cooperative agreement. The total estimated cost of the contract is $788,7591 with the DOE share being $631,007 or 80%. The remaining cost-share of $157,752 or 20% will be provided by GE. The period of performance is from July 1, 2005 through December 30, 2007. In its response to questions 5 and 6 of the attached waiver petition, GE has described its

247

STATEMENT OF CONSIDERATIONS ADVANCE WAIVER OF PATENT RIGHTS TO GENERAL ELECTRIC COMPANY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FC26-06NT42959 FOR "HARSH FC26-06NT42959 FOR "HARSH ENVIRONMENT ELECTRONICS PACKAGING FOR DOWN-HOLE GAS AND OIL EXPLORATION"; CH-140; W(A)-07-020 General Electric (GE), through its GE Global Research Center, has petitioned for an advanced waiver of domestic and foreign patent rights to inventions conceived or first actually reduced to practice under DOE Contract No. DE-FC26-06NT42959. This advanced waiver is intended to apply to all subject inventions of GE's employees and those of its subcontractors, regardless of tier, except subcontractors eligible to obtain title pursuant to P. L. 96-517 as amended, and National Laboratories. As brought out in its waiver petition, GE will develop electronics packaging technologies in order to enable downhole drilling applications at temperatures greater than 400 "F and to depths

248

STATEMENT OF CONSIDERATIONS ADVANCE WAIVER OF PATENT RIGHTS TO GENERAL ELECTRIC COMPANY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

AC36-04GO116034 FOR AC36-04GO116034 FOR "DESIGN AND DEVELOPMENT OF HIGH PERFORMANCE POLYMER FUEL CELL MEMBRANES"; CH-1372; W(A)-06-018 General Electric (GE), through its GE Global Research Center, has petitioned for an advanced waiver of domestic and foreign patent rights to inventions conci4ed or first actually reduced to practice under DOE Contract No. DE-FC36-04GO16034. This advanced waiver is intended to apply to all subject inventions of GE's employees and those of its subcontractors, regardless of tier, except subcontractors eligible to obtain title pursuant to P.L. 96-517 as amended, and National Laboratories. As brought out in its waiver petition, GE will design and develop new polymer-based membranes for use in high temperature, low humidity hydrogen fuel cells.

249

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

250

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

251

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

252

The 12 GeV CEBAF Upgrade Project at Thomas Jefferson National Accelerator Facility, OAS-RA-L-11-13  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

12 GeV CEBAF Upgrade 12 GeV CEBAF Upgrade Project at Thomas Jefferson National Accelerator Facility OAS-RA-L-11-13 September 2011 Department of Energy Washington, DC 20585 September 30, 2011 MEMORANDUM FOR THE DEPUTY DIRECTOR FOR SCIENCE PROGRAMS, OFFICE OF SCIENCE DIRECTOR, OFFICE OF RISK MANAGEMENT AND FINANCIAL POLICY, OFFICE OF THE CHIEF FINANCIAL OFFICER FROM: David Sedillo, Director NNSA & Science Audits Division Office of Inspector General SUBJECT: INFORMATION: Audit Report on "The 12 GeV CEBAF Upgrade Project at Thomas Jefferson National Accelerator Facility" Audit Report Number: OAS-RA-L-11-13 BACKGROUND In September 2008, the Department of Energy's (Department) Office of Science approved a construction project to double the electron beam energy of the Continuous Electron Beam

253

Entanglement Entropy of the Early Universe in Generalized Chaplygin Gas Model  

E-Print Network (OSTI)

We provide an explicit calculation of the evolution of the cosmic entanglement entropy in the early universe before the matter dominant era. This is made possible by invoking the generalized Chaplygin gas (GCG) model, which has the advantage of preserving unitarity and providing a smooth transition between the inflation epoch and the radiation dominant era. The dynamics of the universe is described by the quantization in the minisuperspace of the GCG model, following the prescription proposed by Wheeler and DeWitt. Two sources of contribution to the cosmic entanglement entropy are considered: one from the homogeneous background where the observable and the unobservable regions of the universe are entangled and the other from the inhomogeneous cosmological perturbations where different modes are entangled. We find that the homogeneous contribution grows exponentially at the very beginning of the inflation, but decreases during the radiation dominant era. Conversely, that from the cosmological perturbation is found to decrease at first and then increase after reaching a minimum value. The net result is that the total entanglement entropy reaches a minimum at an early stage of the inflation and then increases throughout most of the inflation and the entire radiation dominant era.

Pisin Chen; Yuezhen Niu

2011-12-07T23:59:59.000Z

254

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

255

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

256

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

257

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

NLE Websites -- All DOE Office Websites (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

258

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

259

Moments of the Spin Structure Functions g1p and g1d for 0.05 < Q2 < 3.0 GeV2  

SciTech Connect

The spin structure functions $g_1$ for the proton and the deuteron have been measured over a wide kinematic range in $x$ and \\Q2 using 1.6 and 5.7 GeV longitudinally polarized electrons incident upon polarized NH$_3$ and ND$_3$ targets at Jefferson Lab. Scattered electrons were detected in the CEBAF Large Acceptance Spectrometer, for $0.05 < Q^2 < 5 $\\ GeV$^2$ and $W < 3$ GeV. The first moments of $g_1$ for the proton and deuteron are presented -- both have a negative slope at low \\Q2, as predicted by the extended Gerasimov-Drell-Hearn sum rule. The first result for the generalized forward spin polarizability of the proton $\\gamma_0^p$ is also reported, and shows evidence of scaling above $Q^2$ = 1.5 GeV$^2$. Although the first moments of $g_1$ are consistent with Chiral Perturbation Theory (\\ChPT) calculations up to approximately $Q^2 = 0.06$ GeV$^2$, a significant discrepancy is observed between the $\\gamma_0^p$ data and \\ChPT\\ for $\\gamma_0^p$,even at the lowest \\Q2.

Prok, Yelena; Bosted, Peter; Burkert, Volker; Deur, Alexandre; Dharmawardane, Kahanawita; Dodge, Gail; Griffioen, Keith; Kuhn, Sebastian; Minehart, Ralph; Adams, Gary; Amaryan, Moscov; Amaryan, Moskov; Anghinolfi, Marco; Asryan, G.; Audit, Gerard; Avagyan, Harutyun; Baghdasaryan, Hovhannes; Baillie, Nathan; Ball, J.P.; Ball, Jacques; Baltzell, Nathan; Barrow, Steve; Battaglieri, Marco; Beard, Kevin; Bedlinskiy, Ivan; Bektasoglu, Mehmet; Bellis, Matthew; Benmouna, Nawal; Berman, Barry; Biselli, Angela; Blaszczyk, Lukasz; Boyarinov, Sergey; Bonner, Billy; Bouchigny, Sylvain; Bradford, Robert; Branford, Derek; Briscoe, William; Brooks, William; Bultmann, S.; Bueltmann, Stephen; Butuceanu, Cornel; Calarco, John; Careccia, Sharon; Carman, Daniel; Casey, Liam; Cazes, Antoine; Chen, Shifeng; Cheng, Lu; Cole, Philip; Collins, Patrick; Coltharp, Philip; Cords, Dieter; Corvisiero, Pietro; Crabb, Donald; Crede, Volker; Cummings, John; Dale, Daniel; Dashyan, Natalya; De Masi, Rita; De Vita, Raffaella; De Sanctis, Enzo; Degtiarenko, Pavel; Denizli, Haluk; Dennis, Lawrence; Dhuga, Kalvir; Dickson, Richard; Djalali, Chaden; Doughty, David; Dugger, Michael; Dytman, Steven; Dzyubak, Oleksandr; Egiyan, Hovanes; Egiyan, Kim; Elfassi, Lamiaa; Elouadrhiri, Latifa; Eugenio, Paul; Fatemi, Renee; Fedotov, Gleb; Feldman, Gerald; Fersch, Robert; Feuerbach, Robert; Forest, Tony; Fradi, Ahmed; Funsten, Herbert; Garcon, Michel; Gavalian, Gagik; Gevorgyan, Nerses; Gilfoyle, Gerard; Giovanetti, Kevin; Girod, Francois-Xavier; Goetz, John; Golovach, Evgeny; Gothe, Ralf; Guidal, Michel; Guillo, Matthieu; Guler, Nevzat; Guo, Lei; Gyurjyan, Vardan; Hadjidakis, Cynthia; Hafidi, Kawtar; Hakobyan, Hayk; Hanretty, Charles; Hardie, John; Hassall, Neil; Heddle, David; Hersman, F.; Hicks, Kenneth; Hleiqawi, Ishaq; Holtrop, Maurik; Huertas, Marco; Hyde, Charles; Ilieva, Yordanka; Ireland, David; Ishkhanov, Boris; Isupov, Evgeny; Ito, Mark; Jenkins, David; Jo, Hyon-Suk; Johnstone, John; Joo, Kyungseon; Juengst, Henry; Kalantarians, Narbe; Keith, Christopher; Kellie, James; Khandaker, Mahbubul; Kim, Kui; Kim, Kyungmo; Kim, Wooyoung; Klein, Andreas; Klein, Franz; Klusman, Mike; Kossov, Mikhail; Krahn, Zebulun; Kramer, Laird; Kubarovsky, Valery; Kuhn, Joachim; Kuleshov, Sergey; Kuznetsov, Viacheslav; Lachniet, Jeff; Laget, Jean; Langheinrich, Jorn; Lawrence, Dave; Lima, Ana; Livingston, Kenneth; Lu, Haiyun; Lukashin, K.; MacCormick, Marion; Marchand, Claude; Markov, Nikolai; Mattione, Paul; McAleer, Simeon; McKinnon, Bryan; McNabb, John; Mecking, Bernhard; Mestayer, Mac; Meyer, Curtis; Mibe, Tsutomu; Mikhaylov, Konstantin; Mirazita, Marco; Miskimen, Rory; Mokeev, Viktor; Morand, Ludyvine; Moreno, Brahim; Moriya, Kei; Morrow, Steven; Moteabbed, Maryam; Mueller, James; Munevar Espitia, Edwin; Mutchler, Gordon; Nadel-Turonski, Pawel; Nasseripour, Rakhsha; Niccolai, Silvia; Niculescu, Gabriel; Niculescu, Maria-Ioana; Niczyporuk, Bogdan; Niroula, Megh; Niyazov, Rustam; Nozar, Mina; O'Rielly, Grant; Osipenko, Mikhail; Ostrovidov, Alexander; Park, Kijun; Pasyuk, Evgueni; Paterson, Craig; Anefalos Pereira, S.; Philips, Sasha; Pierce, J.; Pivnyuk, Nikolay; Pocanic, Dinko; Pogorelko, Oleg; Popa, Iulian; Pozdnyakov, Sergey; Preedom, Barry; Price, John; Procureur, Sebastien; Protopopescu, Dan; Qin, Liming; Raue, Brian; Riccardi, Gregory; Ricco, Giovanni; Ripani, Marco; Ritchie, Barry; Rosner, Guenther; Rossi, Patrizia; Rowntree, David; Rubin, Philip; Sabatie, Franck; Salamanca, Julian; Salgado, Carlos; Santoro, Joseph; Sapunenko, Vladimir; Schumacher, Reinhard; Seely, Mikell; Serov, Vladimir; Sharabian, Youri; Sharov, Dmitri; Shaw, Jeffrey; Shvedunov, Nikolay; Skabelin, Alexander; Smith, Elton; Smith, Lee; Sober, Daniel; Sokhan, Daria; Stavinskiy, Aleksey; Stepanyan, Samuel; Stepanyan, Stepan; Stokes, Burnham; Stoler, Paul; Strakovski, Igor; Strauch, Steffen; Suleiman, Riad; Taiuti, Mauro; Tedeschi, David; Tkabladze, Avtandil; Tkachenko, Svyatoslav; Todor, Luminita; Ungaro, Maurizio; V

2009-02-01T23:59:59.000Z

260

All General Counsel Reports | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1, 2013 1, 2013 EO 12866 Meeting at OMB - ATI Allegheny Ludlum March 7, 2013 Ingersoll-Rand: Order (2012-SE-1608) DOE ordered Ingersoll-Rand to pay a $800 civil penalty after finding Ingersoll-Rand had manufactured and distributed in commerce in the U.S. four units of basic model 2TTA0060A4000C, a noncompliant central air conditioner. March 7, 2013 American Cooler Technologies: Order (2013-CE-5305) DOE ordered American Cooler Technologies to pay a $8,000 civil penalty after finding American Cooler Technologies had failed to certify that certain models of walk-in coolers or freezers (WICF) components comply with the applicable energy conservation standards. March 5, 2013 GE Lighting Solutions: Proposed Penalty (2013-SE-4901) DOE alleged in a Notice of Proposed Civil Penalty that General Electric

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261

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

262

ENV-Linkages General Equilibrium Model | Open Energy Information  

Open Energy Info (EERE)

ENV-Linkages General Equilibrium Model ENV-Linkages General Equilibrium Model Jump to: navigation, search Tool Summary Name: ENV-Linkages General Equilibrium Model Agency/Company /Organization: Organisation for Economic Co-Operation and Development Topics: Co-benefits assessment Resource Type: Software/modeling tools Website: www.oecd.org/officialdocuments/displaydocumentpdf/?cote=ECO/WKP(2008)6 References: OECD[1] Summary "The OECD ENV-Linkages General Equilibrium (GE) model is the successor to the OECD GREEN model for environmental studies, which was initially developed by the OECD Economics Department (Burniaux, et al. 1992) and is now hosted at the OECD Environment Directorate. GREEN was originally used for studying climate change mitigation policy and culminated in Burniaux (2000). It was developed into the Linkages model, and subsequently became

263

210 SDSU General Catalog 2013-2014 Counseling and School Psychology  

E-Print Network (OSTI)

must be completed in residence at San Diego State University. Courses (CSP) Refer to Courses for Undergraduates) CSP 300. Stress Management and Life Planning (3) [GE] Prerequisite: Completion of the General health and productive life planning. CSP 310. Group Leadership in Educational Settings (3) Two lectures

Gallo, Linda C.

264

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY -  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- - CORPORATE RESEARCH AND DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE CONTRACT NO: DE-FC36-93CH10589; W(A)-94-013; CH-0830 General Electric Company - Corporate Research and Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions under a cooperative agreement for the development of a 100 MVA HTS (high temperature superconducting) generator under DOE Contract No. DE- FC36-93CH10589. This agreement was awarded under DOE's Superconductivity Partnership Initiative. As we have been advised by the cognizant DOE program office that this work is authorized under the Energy Policy Act of 1992, technical data first produced under this program will be afforded limited protection pursuant to Title XXX, Section 3001(d) of the Energy

265

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

266

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

267

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

268

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

269

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

270

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network (OSTI)

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

271

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

272

Hamiltonian formulation of General Relativity 50 years after the Dirac celebrated paper: do unsolved problems still exist?  

E-Print Network (OSTI)

About 50 years ago, in 1958, Dirac published his formulation of generalized Hamiltonian dynamics for gravitation. Several years later Arnowitt, Deser and Misner (ADM) proposed their description of the dynamics of General Relativity which became a basis of the Wheeler - DeWitt Quantum Geometrodynamics. There exist also other works where the Hamiltonian formulation of gravitational theory was discussed. In spite of decades passed from the famous papers by Dirac and ADM, there are unsolved problems. Namely, are the Dirac and ADM formulations equivalent to each other? Are these formulations equivalent to the original (Lagrangian) Einstein theory? Is the group of transformation in phase space the same as the group of gauge transformation of the Einstein theory? What are rules according to which a generator of transformations in phase space should be constructed? Let us mention also another approach based on extended phase space where gauge degrees of freedom are treated on the equal ground with physical degrees of freedom. Our purpose is to review the above questions and to demonstrate advantages of the extended phase space approach by the example of a simple model with finite number degrees of freedom.

T. P. Shestakova

2010-01-25T23:59:59.000Z

273

DOE General Competencies  

Energy.gov (U.S. Department of Energy (DOE))

The DOE General Competencies are the personal and professional attributes that are critical to successful performance.  A competency model is a collection of competencies that together define...

274

General User Proposals  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposals Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research...

275

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

276

Microsoft Word - 41020_GE_Adv Combustion System_Factsheet_Rev01_10-03.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

FACT SHEET FACT SHEET Advanced Combustion Systems for Next Generation Gas Turbines I.) Participants: Principal Investigator: General Electric, Air Force Research Lab II.) Description A. Objective: Develop a new gas turbine combustion system design with 50% lower emissions, and demonstrate it at sub-scale. The system will be compared with state-of- the-art lean premixed gas turbine NOx emissions at temperatures and pressures comparable to GE F-Class turbines. B. Background/Relevancy: Next generation turbine power plants will require high efficiency gas turbines with higher combustor pressures and firing temperatures than is currently available. These increases in the severity of gas turbine operating conditions will tend to increase NOx emissions. As the desire for higher efficiency drives combustor pressures

277

Kasner and Mixmaster behavior in universes with equation of state w \\ge 1  

E-Print Network (OSTI)

We consider cosmological models with a scalar field with equation of state $w\\ge 1$ that contract towards a big crunch singularity, as in recent cyclic and ekpyrotic scenarios. We show that chaotic mixmaster oscillations due to anisotropy and curvature are suppressed, and the contraction is described by a homogeneous and isotropic Friedmann equation if $w>1$. We generalize the results to theories where the scalar field couples to p-forms and show that there exists a finite value of $w$, depending on the p-forms, such that chaotic oscillations are suppressed. We show that $Z_2$ orbifold compactification also contributes to suppressing chaotic behavior. In particular, chaos is avoided in contracting heterotic M-theory models if $w>1$ at the crunch.

Joel K. Erickson; Daniel H. Wesley; Paul J. Steinhardt; Neil Turok

2003-11-30T23:59:59.000Z

278

Exclusive pi^0 electroproduction at W > 2 GeV with CLAS  

SciTech Connect

Exclusive neutral-pion electroproduction (ep-->e'p'pi0) was measured at Jefferson Lab with a 5.75-GeV electron beam and the CLAS detector. Differential cross sections d4sigma/dtdQ2dxBdphipi and structure functions sigmaT+epsilonsigmaL,sigmaTT and ?LT as functions of t were obtained over a wide range of Q2 and xB. The data are compared with Regge and handbag theoretical calculations. Analyses in both frameworks find that a large dominance of transverse processes is necessary to explain the experimental results. For the Regge analysis it is found that the inclusion of vector meson rescattering processes is necessary to bring the magnitude of the calculated and measured structure functions into rough agreement. In the handbag framework, there are two independent calculations, both of which appear to roughly explain the magnitude of the structure functions in terms of transversity generalized parton distributions.

Bedlinskiy, I.; Kubarovsky, V.; Niccolai, S.; Stoler, P.; Adhikari, K.P.; Anderson, M.D.; Pereira, S. Anefalos; Avakian, H.; Ball, J.; Baltzell, N.A.; Battaglieri, M.; Batourine, V.; Biselli, A.S.; Boiarinov, S.; Bono, J.; Briscoe, W.J.; Brooks, W.K.; Burkert, V.D.; Carman, D.S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P.L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fleming, J.A.; Forest, T.A.; Garillon, B.; Garcon, M.; Gavalian, G.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G.P.; Giovanetti, K.L.; Girod, F.X.; Golovatch, E.; Gothe, R.W.; Griffioen, K.A.; Guegan, B.; Guo, L.; Hafidi, K.; Hakobyan, H.; Harrison, N.; Hattawy, M.; Hicks, K.; Holtrop, M.; Ireland, D.G.; Ishkhanov, B.S.; Isupov, E.L.; Jenkins, D.; Jo, H.S.; Joo, K.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F.J.; Koirala, S.; Kuhn, S.E.; Kuleshov, S.V.; Lenisa, P.; Levine, W.I.; Livingston, K.; Lu, H.Y.; MacGregor, I.J.D.; Markov, N.; Mayer, M.; McKinnon, B.; Mirazita, M.; Mokeev, V.; Montgomery, R.A.; Moody, C.I.; Moutarde, H.; Movsisyan, A; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A.I.; Pappalardo, L.L.; Park, K.; Park, S.; Pasyuk, E.; Phelps, E.; Phelps, W.; Phillips, J.J.; Pisano, S.; Pogorelko, O.; Price, J.W.; Prok, Y.; Protopopescu, D.; Procureur, S.; Puckett, A.J.R.; Raue, B.A.; Ripani, M.; Ritchie, B.G.; Rizzo, A.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schott, D.; Schumacher, R.A.; Seder, E.; Senderovich, I.; Sharabian, Y.G.; Simonyan, A.; Smith, G.D.; Sober, D.I.; Sokhan, D.; Stepanyan, S.S.; Strauch, S.; Sytnik, V.; Tang, W.; Tian, Ye; Ungaro, M.; Vlassov, A.V.; Voskanyan, H.; Voutier, E.; Walford, N.K.; Watts, D.; Wei, X.; Weinstein, L.B.; Yurov, M.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z.W.; Zonta, I.

2014-08-01T23:59:59.000Z

279

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

280

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

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281

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

282

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

283

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

284

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network (OSTI)

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

285

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

286

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

287

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network (OSTI)

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

288

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Energy.gov (U.S. Department of Energy (DOE))

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

289

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

290

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

291

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

292

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

293

OFFICE OF INSPECTOR GENERAL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

APP-005 APP-005 Planning for and Measuring Office of Inspector General Results FY 2002 Annual Performance Report and FY 2003 Annual Performance Plan Office of Inspector General U.S. Department of Energy Inspector General's Message We are pleased to present the Office of Inspector General's (OIG) consolidated Fiscal Year 2002 Annual Performance Report and Fiscal Year 2003 Annual Performance Plan. This document evaluates our actual Fiscal Year (FY) 2002 performance and establishes the performance goals and strategies we will pursue in FY 2003 to fulfill our mission. As mandated by the Inspector General Act, the OIG promotes the effective, efficient, and economical operation of the Department of Energy's programs and operations, including the National Nuclear Security Administration (NNSA).

294

Generalized Galilean Genesis  

E-Print Network (OSTI)

The galilean genesis scenario is an alternative to inflation in which the universe starts expanding from Minkowski in the asymptotic past by violating the null energy condition stably. Several concrete models of galilean genesis have been constructed so far within the context of galileon-type scalar-field theories. We give a generic, unified description of the galilean genesis scenario in terms of the Horndeski theory, i.e., the most general scalar-tensor theory with second-order field equations. In doing so we generalize the previous models to have a new parameter (denoted by {\\alpha}) which results in controlling the evolution of the Hubble rate. The background dynamics is investigated to show that the generalized galilean genesis solution is an attractor, similarly to the original model. We also study the nature of primordial perturbations in the generalized galilean genesis scenario. In all the models described by our generalized genesis Lagrangian, amplification of tensor perturbations does not occur as ...

Nishi, Sakine

2015-01-01T23:59:59.000Z

295

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network (OSTI)

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

296

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

297

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

298

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

299

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

300

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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301

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

302

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

303

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

304

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

305

Partners for progress in HVDC: GE and EPRI  

SciTech Connect

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

306

general_atomics.cdr  

Office of Legacy Management (LM)

former General former General Atomics Hot Cell Facility was constructed in 1959 and operated until 1991. The site encompassed approximately 7,400 square feet of laboratory and remote operations cells. Licensed operations at the facility included receipt, handling, and shipment of radioactive materials; remote handling, examination, and storage of previously irradiated nuclear fuel materials; pilot-scale tritium extraction operations; and development, fabrication, and inspection of uranium oxide-beryllium oxide fuel materials. General Atomics performed most of the work for the federal government. The General Atomics Hot Cell Facility was located in a 60-acre complex 13 miles northwest of downtown San Diego, 1 mile inland from the Pacific Ocean, and approximately 300 feet above sea level.

307

general_atomics.cdr  

NLE Websites -- All DOE Office Websites (Extended Search)

former former General Atomics Hot Cell Facility was constructed in 1959 and operated until 1991. The site encompassed approximately 7,400 square feet of laboratory and remote operations cells. Licensed operations at the facility included receipt, handling, and shipment of radioactive materials; remote handling, examination, and storage of previously irradiated nuclear fuel materials; pilot-scale tritium extraction operations; and development, fabrication, and inspection of uranium oxide-beryllium oxide fuel materials. General Atomics performed most of the work for the federal government. The General Atomics Hot Cell Facility was located in a 60-acre complex 13 miles northwest of downtown San Diego, 1 mile inland from the Pacific Ocean, and approximately 300 feet above sea level. The General Atomics site is in the center of Torrey Mesa Science Center, a 304-acre industrial

308

MASSACHUSETTS GENERAL HOSPITAL  

E-Print Network (OSTI)

MASSACHUSETTS GENERAL HOSPITAL Page 1 of 4 HARVARD MEDICAL SCHOOL Position: Quality & Safety and efficacy of our practice, reporting this data out to department clinicians, senior leadership and hospital hospital and department groups, exceptional interpersonal, communication, project organization, time

Adams, Mark

309

1 General Information  

E-Print Network (OSTI)

1 General Information. 1.1 Class time / location: TTh 9-10:15, REC 114. 1.2 Office Hours: T 1:00-2:30 and Th 12:00-1:00. 1.3 Textbook: Elementary differential ...

2014-08-26T23:59:59.000Z

310

general_atomics.cdr  

Office of Legacy Management (LM)

300 feet above sea level. The General Atomics site is in the center of Torrey Mesa Science Center, a 304-acre industrial park. No ground water wells are at or near the Hot Cell...

311

General User Proposals  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposals Print Tuesday, 01 June 2010 09:36 General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS...

312

Introduction: General Landslide Studies  

Science Journals Connector (OSTI)

Highlights for several papers included in the “general landslide” session for the 3rd World Landslide Forum are presented. Topics range from early warning systems and modelling to geomorphology and solid waste...

Peter Bobrowsky; Yueping Yin…

2014-01-01T23:59:59.000Z

313

General relativity and experiment  

E-Print Network (OSTI)

The confrontation between Einstein's theory of gravitation and experiment is summarized. Although all current experimental data are compatible with general relativity, the importance of pursuing the quest for possible deviations from Einstein's theory is emphasized.

T. Damour

1994-12-08T23:59:59.000Z

314

2011 IAEA General Conference  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2011 IAEA General Conference 2011 IAEA General Conference Remarks as Prepared for Delivery Secretary Steven Chu Monday, September 19, 2011 Thank you, Ambassador Feruta. Congratulations on your election as President of this Conference. I also want to thank Director General Amano for his outstanding leadership. I am honored to represent the United States today, and I want to share a message from President Barack Obama: "On behalf of the United States, please accept my best wishes for a successful International Atomic Energy Agency General Conference. This year's meeting takes place against the backdrop of the severe earthquake and tsunami that struck Japan in March and the devastating accident at the Fukushima Daiichi Nuclear Power Station that followed. Along with

315

Symmetric generalized binomial distributions  

SciTech Connect

In two recent articles, we have examined a generalization of the binomial distribution associated with a sequence of positive numbers, involving asymmetric expressions of probabilities that break the symmetry win-loss. We present in this article another generalization (always associated with a sequence of positive numbers) that preserves the symmetry win-loss. This approach is also based on generating functions and presents constraints of non-negativeness, similar to those encountered in our previous articles.

Bergeron, H. [Univ Paris-Sud, ISMO, UMR 8214, 91405 Orsay (France)] [Univ Paris-Sud, ISMO, UMR 8214, 91405 Orsay (France); Curado, E. M. F. [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150 22290-180 - Rio de Janeiro (Brazil) [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150 22290-180 - Rio de Janeiro (Brazil); Instituto Nacional de Ciência e Tecnologia - Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 - Rio de Janeiro, RJ (Brazil); Gazeau, J. P. [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150 22290-180 - Rio de Janeiro (Brazil) [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150 22290-180 - Rio de Janeiro (Brazil); APC, UMR 7164, Univ Paris Diderot, Sorbonne Paris Cité, 75205 Paris (France); Rodrigues, Ligia M. C. S., E-mail: herve.bergeron@u-psud.fr, E-mail: evaldo@cbpf.br, E-mail: gazeau@apc.univ-paris7.fr, E-mail: ligia@cbpf.br [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150 22290-180 - Rio de Janeiro (Brazil)

2013-12-15T23:59:59.000Z

316

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

waiver. Referring to items 4-8 of GE's waiver petition, GE is a leading manufacturer of gas turbine products, and in par:icular, low emissions technology. This, coupled with GE's...

317

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

318

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network (OSTI)

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

319

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FC26-08NT01579; W(A)-09-036, CH-1501 The Petitioner, General Electric Global Research (GE), was awarded this cooperative agreement for the performance of work entitled , "High-Efficiency Sold-State Downlight Luminaries with Novel Cooling". According to its response to question 2, G E states that this program will develop novel synthetic jet cooling technology for cooling LED luminaries. In addition to synthetic jet technology, driver electronics , light engine , optical design , and fixture will be designed and demonstrated. This waiver is only for inventions of GE made under the cooperative agreement. The total estimated cost of the contract is $2 ,886 ,040 with GE providing a 25% cost-share or $721 ,510. DOE is providing the remaining 75% share of $2,164,530. The period of

320

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH CENTER FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6560; W(A)-09-026; CH-1491 6560; W(A)-09-026; CH-1491 General Electric Global Research Center (GE-GRC), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Clean and Efficient Diesel Engine." The purpose of the cooperative agreement is to develop clean and efficient diesel engine technology. The program aims to enhance the efficiency of large displacement (>10 liters/cylinder), medium speed «1200 rev/min) diesel engines that are used in locomotive. marine, and power generation applications. This waiver is for inventions of GE-GRC only. The work under this subcontract is expected to take place from October 1, 2008 through September 30, 2009, at a total cost of $1 ,230,000. GE-GRC will provide 20% cost share or

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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321

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH CENTER FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

859; W(A)-2012-015 859; W(A)-2012-015 ; CH-1654 General Electric Global Research Center (GE-GRC or GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Modeling Creep Fatigue Environment Interactions in Steam Turbine Rotor Materials for Advanced Ultra Supercritical Coal Power Plants". Under this agreement, GE will model creep-fatigue-environment interactions in steam turbi ne rotor materials for adva nced ultra supercritical (A-USC) coal power plants, to develop and demonstrate computational algorithms for alloy property predictions , and to determine and model key mechanisms that contribute to the damages caused by creep-fatigue-environment interactions. The technology developed

322

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

323

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

324

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

325

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

generation, industrial, marine, oil and gas and distributed generation markets. GE is the industrial leader for heavy-duty gas turbines installed worldwide. GE states that it has...

326

General Employee Radiological Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Not Measurement Not Measurement Sensitive DOE-HDBK-1131-2007 December 2007_______ Change Notice 1 Reaffirmed 2013 DOE HANDBOOK GENERAL EMPLOYEE RADIOLOGICAL TRAINING U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ Change 1 DOE-HDBK-1131-2007 Original Change Part 2 page 5 The average annual radiation dose to a member of the general population is about 360 millirem/year. The average annual radiation dose to a member of the general population is about 620 millirem/year. Part 2 page 5 Natural background radiation is by far the

327

General User Proposal Scores  

NLE Websites -- All DOE Office Websites (Extended Search)

General User Proposal Scores General User Proposal Scores General User Proposal Scores Print Tuesday, 01 June 2010 10:34 Scoring Proposals are scored on a scale of 1 to 5, with 1 being the best score and 5 the worst. Reviewers are requested to use the following ranking schema: Must do High Priority Medium Priority Low priority Don't do Beam time is assigned based on each proposal's score in relation to all other proposals for a given beamline. For beamlines where beamtime requests exceed available beamtime, a cutoff score is assigned after which no beam time is allocated. proposal scores Beam Time Cutoff Scores for the Current Cycle The table below lists the percent of beam time shifts allocated/requested for each beamline, and the cutoff scores, below which no beam time was assigned.

328

General Employee Radiological Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

_______ _______ Change Notice 1 June 2009 DOE HANDBOOK GENERAL EMPLOYEE RADIOLOGICAL TRAINING U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Not Measurement Sensitive This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ Change 1 DOE-HDBK-1131-2007 Original Change Part 2 page 5 The average annual radiation dose to a member of the general population is about 360 millirem/year. The average annual radiation dose to a member of the general population is about 620 millirem/year. Part 2 page 5 Natural background radiation is by far the

329

NEWTON's General Science References  

NLE Websites -- All DOE Office Websites (Extended Search)

General Science References General Science References Do you have a great general science reference link? Please click our Ideas page. Featured Reference Links: First.gov Science and Technology First.gov Science and Technology This site, sponsered by the US Government provides reference links to topics on science, telecommunications, computers, research agencies, and news. NASA Science NASA Science NASA Science, is a website sponsered by NASA, that supplies resources for understanding our world and the world above. Topics include earth science, heliophysics, the planets, astrophysics and much more. There is also an educator page! Nobel Laueate Listings and Stories Nobel Laueate Listings and Stories See the official site for the Nobel Prize, and read biographies about all of the Nobel Laureates, and there life changing discoveries and accomplishments.

330

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

331

Generalized coherent states  

E-Print Network (OSTI)

In the coherent state of the harmonic oscillator, the probability density is that of the ground state subjected to an oscillation along a classical trajectory. Senitzky and others pointed out that there are states of the harmonic oscillator corresponding to an identical oscillatory displacement of the probability density of any energy eigenstate. These generalizations of the coherent state are rarely discussed, yet they furnish an interesting set of quantum states of light that combine features of number states and coherent states. Here we give an elementary account of the quantum optics of generalized coherent states.

T. G. Philbin

2013-12-18T23:59:59.000Z

332

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

333

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

334

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

335

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

336

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

337

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

338

ENGINEERING General Information 436  

E-Print Network (OSTI)

great power to control their environment and, with this power, the responsibility to control it wiselySCHOOL OF ENGINEERING General Information 436 Descriptions of Fields of Study 438 Facilities 443 Information HISTORY AND AIMS OF THE SCHOOL Instruction in engineering began at Rutgers in 1864, when the state

Garfunkel, Eric

339

GENERAL CIRCULATION Mean Characteristics  

E-Print Network (OSTI)

of California, Department of Land, Air, and Water Resources, Davis, CA 95616-8627, USA Introduction state. The general circulation undergoes seasonal change. In many fields the seasonal change is much on an annual average. Simple geometry (see Figure 1) shows that the amount of solar radiation reaching unit

Grotjahn, Richard

340

General com Technology community  

E-Print Network (OSTI)

Campus IT General com m unity Technology community ITsystem owners Campus Council for Information Technology (CCFIT) · ~30 members · Advisory evaluation and review role · Input from faculty, staff, students formal representation on steering team and subcommittees Technology Support Program · Technology support

Ferrara, Katherine W.

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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341

Singular Value Decomposition Generalized  

E-Print Network (OSTI)

1 Overview The singular value decomposition (SVD) is a generalization of the eigen- ferent eigenvalues are pairwise orthogonal. Let X be a positive semi-definite, its eigen containing the eigenvalues of X. The SVD uses the eigen-decomposition of a positive semi-definite matrix

Abdi, Hervé

342

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

343

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

344

Diamond turning of Si and Ge single crystals  

SciTech Connect

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

345

6 GeV light source project cost estimating procedure  

SciTech Connect

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

346

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

347

DOE Solar Energy Technologies Program TPP Final Report - A Value Chain Partnership to Accelerate U.S. PV Industry Growth, GE Global Research  

SciTech Connect

General Electric’s (GE) DOE Solar Energy Technologies TPP program encompassesd development in critical areas of the photovoltaic value chain that affected the LCOE for systems in the U.S. This was a complete view across the value chain, from materials to rooftops, to identify opportunities for cost reductions in order to realize the Department of Energy’s cost targets for 2010 and 2015. GE identified a number of strategic partners with proven leadership in their respective technology areas to accelerate along the path to commercialization. GE targeted both residential and commercial rooftop scale systems. To achieve these goals, General Electric and its partners investigated three photovoltaic pathways that included bifacial high-efficiency silicon cells and modules, low-cost multicrystalline silicon cells and modules and flexible thin film modules. In addition to these technologies, the balance of system for residential and commercial installations were also investigated. Innovative system installation strategies were pursed as an additional avenue for cost reduction.

Todd Tolliver; Danielle Merfeld; Charles Korman; James Rand; Tom McNulty; Neil Johnson; Dennis Coyle

2009-07-31T23:59:59.000Z

348

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

349

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

350

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

351

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

352

Office of Inspector General  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Inspector General Inspector General Office of Audits and Inspections Work Plan for FY 2013 Audits Central Audits Division  Ecotality  Funding Overlap  Follow-up on Smart Grid Investment Grant  DOE's Loan Program Office's Portfolio Management  Office of Fossil Energy's Regional Carbon Sequestration Partnerships  Advanced Manufacturing Office's Combined Heat and Power Systems  DOE's Management of Contaminated Non-EM Facilities  Unneeded Real Estate  Review of For-Profit Grantees for selected DOE programs  Commercialization Efforts at National Laboratories  Research Misconduct at Office of Science  Public Dissemination of Research Results  BPA's Management of Borrowing Authority Construction  Controls Over PMA's Use of Hedging Instruments

353

EMSL: News: General Stories  

NLE Websites -- All DOE Office Websites (Extended Search)

General News General News Battery development may extend range of electric cars Battery development may extend range of electric cars New anode quadruples life of lithium-sulfur battery, could also help store renewable energy more cheaply Released: January 09, 2014 Scientists used EMSL capabilities and expertise to help develop and test a new anode design for lithium-sulfur batteries. The "hybrid" anode significantly extends the life of lithium-sulfur batteries, bringing them closer to commercial use. Read the PNNL news release. Batteries as they are meant to be seen Batteries as they are meant to be seen The search for long-lasting, inexpensive rechargeable batteries Released: December 27, 2013 Researchers working at EMSL study how a battery works under wet conditions

354

Extremal generalized quantum measurements  

E-Print Network (OSTI)

A measurement on a section K of the set of states of a finite dimensional C*-algebra is defined as an affine map from K to a probability simplex. Special cases of such sections are used in description of quantum networks, in particular quantum channels. Measurements on a section correspond to equivalence classes of so-called generalized POVMs, which are called quantum testers in the case of networks. We find extremality conditions for measurements on K and characterize generalized POVMs such that the corresponding measurement is extremal. These results are applied to the set of channels. We find explicit extremality conditions for two outcome measurements on qubit channels and give an example of an extremal qubit 1-tester such that the corresponding measurement is not extremal.

Anna Jencova

2012-07-23T23:59:59.000Z

355

Generalized qudit Choi maps  

E-Print Network (OSTI)

Following the linear programming prescription of Ref. \\cite{PRA72}, the $d\\otimes d$ Bell diagonal entanglement witnesses are provided. By using Jamiolkowski isomorphism, it is shown that the corresponding positive maps are the generalized qudit Choi maps. Also by manipulating particular $d\\otimes d$ Bell diagonal separable states and constructing corresponding bound entangled states, it is shown that thus obtained $d\\otimes d$ BDEW's (consequently qudit Choi maps) are non-decomposable in certain range of their parameters.

M. A. Jafarizadeh; M. Rezaeen; S. Ahadpour

2006-07-24T23:59:59.000Z

356

A Generalized Deletion Machine  

E-Print Network (OSTI)

In this work we prescribe a more generalized quantum-deleting machine (input state dependent). The fidelity of deletion is dependent on some machine parameters such that on alteration of machine parameters we get back to standard deleting machines. We also carried out a various comparative study of various kinds of quantum deleting machines. We also plotted graphs, making a comparative study of fidelity of deletion of the deletion machines, obtained as particular cases on changing the machine parameters of our machine.

Indranil Chakrabarty; Satyabrata Adhikari

2005-11-22T23:59:59.000Z

357

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

358

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

359

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

360

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network (OSTI)

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

362

General Motors | Open Energy Information  

Open Energy Info (EERE)

General Motors Place: Detroit, MI Website: http:www.generalmotors.com References: General Motors1 Information About Partnership with NREL Partnership with NREL Yes Partnership...

363

Generalized Adaptive A* Xiaoxun Sun  

E-Print Network (OSTI)

Generalized Adaptive A* Xiaoxun Sun USC Computer Science Los Angeles, California xiaoxuns spaces changes. Adaptive A* [7] is a Cite as: Generalized Adaptive A*, Xiaoxun Sun, Sven Koenig

Yeoh, William

364

Generalized utility metrics for supercomputers  

E-Print Network (OSTI)

2007:1–12 Generalized utility metrics for supercomputers 12.ISSUE PAPER Generalized utility metrics for supercomputersproblem of ranking the utility of supercom- puter systems

Strohmaier, Erich

2009-01-01T23:59:59.000Z

365

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

366

€18.5 Million in New Research Program Funding Announced, GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

367

Using 3D Painting to Build and Repair Parts | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

368

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network (OSTI)

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

369

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

370

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

371

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

372

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

373

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

374

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

375

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

376

Position effect on FGF13 associated with X-linked congenital generalized hypertrichosis  

Science Journals Connector (OSTI)

...hypertrichosis 10.1073/pnas.1216412110 Gina M. DeStefano Katherine A. Fantauzzo Lynn Petukhova Mazen Kurban Marija Tadin-Strapps...2009) Fast and accurate short read alignment with Burrows-Wheeler transform. Bioinformatics 25(14):1754 ZZQQhy1760. 2...

Gina M. DeStefano; Katherine A. Fantauzzo; Lynn Petukhova; Mazen Kurban; Marija Tadin-Strapps; Brynn Levy; Dorothy Warburton; Elizabeth T. Cirulli; Yujun Han; Xiaoyun Sun; Yufeng Shen; Maryam Shirazi; Vaidehi Jobanputra; Rodrigo Cepeda-Valdes; Julio Cesar Salas-Alanis; Angela M. Christiano

2013-01-01T23:59:59.000Z

377

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

378

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

379

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

380

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Hadronic resonance production in $d$+Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV at RHIC  

E-Print Network (OSTI)

We present the first measurements of the $\\rho(770)^0$, $K^*$(892), $\\Delta$(1232)$^{++}$, $\\Sigma$(1385), and $\\Lambda$(1520) resonances in $d$+Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV, reconstructed via their hadronic decay channels using the STAR detector at RHIC. The masses and widths of these resonances are studied as a function of transverse momentum ($p_T$). We observe that the resonance spectra follow a generalized scaling law with the transverse mass ($m_T$). The $$ of resonances in minimum bias collisions is compared to the $$ of $\\pi$, $K$, and $\\bar{p}$. The $\\rho^0/\\pi^-$, $K^*/K^-$, $\\Delta^{++}/p$, $\\Sigma(1385)/\\Lambda$, and $\\Lambda(1520)/\\Lambda$ ratios in $d$+Au collisions are compared to the measurements in minimum bias $p+p$ interactions, where we observe that both measurements are comparable. The nuclear modification factors ($R_{dAu}$) of the $\\rho^0$, $K^*$, and $\\Sigma^*$ scale with the number of binary collisions ($N_{bin}$) for $p_T >$ 1.2 GeV/$c$.

B. I. Abelev

2008-01-02T23:59:59.000Z

382

Hadronic resonance production in d + Au collisions at sqrt s NN = 200 GeV at RHIC  

SciTech Connect

We present the first measurements of the {rho}(770){sup 0}, K*(892), {Delta}(1232){sup ++}, {Sigma}(1385), and {Lambda}(1520) resonances in d+Au collisions at {radical}s{sub NN} = 200 GeV, reconstructed via their hadronic decay channels using the STAR detector at RHIC. The masses and widths of these resonances are studied as a function of transverse momentum (p{sub T}). We observe that the resonance spectra follow a generalized scaling law with the transverse mass (m{sub T}). The of resonances in minimum bias collisions is compared to the of {pi}, K, and {bar p}. The {rho}{sup 0}/{pi}{sup -}, K*/K{sup -}, {Delta}{sup ++}/p, {Sigma}(1385)/{Lambda}, and {Lambda}(1520)/{Lambda} ratios in d + Au collisions are compared to the measurements in minimum bias p + p interactions, where we observe that both measurements are comparable. The nuclear modification factors (R{sub dAu}) of the {rho}{sup 0}, K*, and {Sigma}* scale with the number of binary collisions (N{sub bin}) for p{sub T} > 1.2 GeV/c.

STAR Coll

2008-08-22T23:59:59.000Z

383

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

384

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

385

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

386

Measuring W photon couplings in a 500 GeV e sup + e sup - collider  

SciTech Connect

The Standard Model gives definite predictions for the W-photon couplings. Measuring them would test an important ingredient of the model. In this work we study the capability of a 500 GeV e{sup +}e{sup {minus}} collider to measure these couplings. We study the most general C and P conserving WW{lambda} vertex. This vertex contains two free parameters, {kappa} and {lambda}. We look at three processes: e{sup +}e{sup {minus}} {yields} W{sup +}W{sup {minus}}, e{lambda} {yields} W{nu} and {lambda}{lambda} {yields} W{sup +}W{sup {minus}}. For each process we present analytical expressions of helicity amplitudes for arbitrary values of {kappa} and {lambda}. We consider three different sources for the initial photon(s). The first two are breamsstrahlung and beamstrahlung (photon radiation induced by the collective fields of the opposite bunch). Both occur naturally in the collider environment. The third is a photon beam generated by scattering low energy laser light off a high energy electron beam. We examine potential observables for each process, calculating their sensitivity to {kappa} and {lambda}, and estimating the accuracy with which they can be measured. Assuming Standard Model values are actually measured, we present the region in the {kappa}-{lambda} plane to which the W couplings can be restricted with a given confidence level. We find that combining the three processes, one can measure {kappa} and {lambda} with accuracy of 0.01--0.02.

Yehudai, E.

1991-08-01T23:59:59.000Z

387

General Employee Radiological Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DOE HANDBOOK GENERAL EMPLOYEE RADIOLOGICAL TRAINING U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Not Measurement Sensitive This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ DOE-HDBK-1131-2007 iii Foreword This Handbook describes an implementation process for core training as recommended in chapter 14, Radiation Safety Training, of Implementation Guide G44.1B, Radiation Protection Programs Guide, and as outlined in the DOE Radiological Control Standard [RCS - DOE-STD-1098-99, Ch. 1]. The Handbook is meant to assist those individuals

388

Teacher and General Resources  

NLE Websites -- All DOE Office Websites (Extended Search)

Argonne Argonne Science Project Ideas! Our Teacher and General Resources section provides you with online aids for learning about science, such as a tutorial of science equipment, as well as guides for the metric system. Please select any item below that interests you. Also, if you have an idea for a great teacher resource that we could share, please click our Ideas page. We would love to hear from you! Science Equipment Resources: Online Basic Laboratory Equipment Information An Introduction to Basic Laboratory Equipment All students need to know and understand the function of the equipment that they will be using in the science classroom. This exercise is to help students know a beaker from a bunsen burner! TSwift MB 3200 Microscope Online Tutorial Online Microscope Tutorial

389

Ocean General Circulation Models  

SciTech Connect

1. Definition of Subject The purpose of this text is to provide an introduction to aspects of oceanic general circulation models (OGCMs), an important component of Climate System or Earth System Model (ESM). The role of the ocean in ESMs is described in Chapter XX (EDITOR: PLEASE FIND THE COUPLED CLIMATE or EARTH SYSTEM MODELING CHAPTERS). The emerging need for understanding the Earth’s climate system and especially projecting its future evolution has encouraged scientists to explore the dynamical, physical, and biogeochemical processes in the ocean. Understanding the role of these processes in the climate system is an interesting and challenging scientific subject. For example, a research question how much extra heat or CO2 generated by anthropogenic activities can be stored in the deep ocean is not only scientifically interesting but also important in projecting future climate of the earth. Thus, OGCMs have been developed and applied to investigate the various oceanic processes and their role in the climate system.

Yoon, Jin-Ho; Ma, Po-Lun

2012-09-30T23:59:59.000Z

390

United States Attorney General  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) 93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) United States Attorney General ***1 *293 January 16, 1981 **1 The President The White House Washington, D.C. 20500 MY DEAR MR. PRESIDENT: You have asked my opinion concerning the scope of currently existing legal and constitutional authorities for the continuance of government functions during a temporary lapse in appropriations, such as the Government sustained on October 1, 1980. As you know, some initial determination concerning the extent of these authorities had to be made in the waning hours of the last fiscal year in order to avoid extreme administrative confusion that might have arisen from Congress' failure timely to enact 11 of the 13 anticipated regular appropriations bills, FN;B1[FN1]FN;F1 or a

391

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network (OSTI)

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

392

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network (OSTI)

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

393

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

394

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network (OSTI)

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

395

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network (OSTI)

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

396

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network (OSTI)

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

397

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

398

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network (OSTI)

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

399

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network (OSTI)

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

400

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network (OSTI)

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network (OSTI)

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

402

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

403

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

404

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

405

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

406

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

407

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

408

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

409

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

410

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

411

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

412

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

413

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

414

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

415

Contact for the Assistant General Counsel for General Law (GC...  

Energy Savers (EERE)

Sue Wadel, Deputy Assistant General Counsel 202-586-4040 sue.wadel@hq.doe.gov Isiah Smith Jr., Deputy Assistant General Counsel 202-586-6724 isiah.smith@hq.doe.gov Yvonne...

416

Results from the Operational Testing of the General Electric Smart Grid Capable Electric Vehicle Supply Equipment (EVSE)  

SciTech Connect

The Idaho National Laboratory conducted testing and analysis of the General Electric (GE) smart grid capable electric vehicle supply equipment (EVSE), which was a deliverable from GE for the U.S. Department of Energy FOA-554. The Idaho National Laboratory has extensive knowledge and experience in testing advanced conductive and wireless charging systems though INL’s support of the U.S. Department of Energy’s Advanced Vehicle Testing Activity. This document details the findings from the EVSE operational testing conducted at the Idaho National Laboratory on the GE smart grid capable EVSE. The testing conducted on the EVSE included energy efficiency testing, SAE J1772 functionality testing, abnormal conditions testing, and charging of a plug-in vehicle.

Richard Barney Carlson; Don Scoffield; Brion Bennett

2013-12-01T23:59:59.000Z

417

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method  

Science Journals Connector (OSTI)

This paper presents a theoretical study of Si and Ge atom dangling bond defects in a-Si,Ge alloys. We use a tight-binding Hamiltonian, and a structural model based on a cluster Bethe Lattice. The central clust...

S. Y. Lin; G. Lucovsky

1985-01-01T23:59:59.000Z

418

A Systematic Investigation of the Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System  

Science Journals Connector (OSTI)

Nb3Ge films were prepared by coevaporation of Nb and Ge from two sources under well defined and controlled conditions. We have studied the formation of the A15 phase by varying the processing parameters-compositi...

H. U. Habermeier; P. Chaudhari

1981-01-01T23:59:59.000Z

419

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

420

Chapter 22 - General Concepts  

Science Journals Connector (OSTI)

Publisher Summary The term Electronic Design Automation (EDA) refers to the tools that are used to design and verify integrated circuits (ICs), printed circuit boards (PCBs), and electronic systems, in general. Over time, these early computer-aided drafting tools evolved into interactive programs that performed integrated circuit layout. Other companies like Racal-Redac, SCI-Cards, and Telesis created equivalent layout programs for printed circuit boards. These integrated circuit and circuit board layout programs became known as Computer-Aided Design (CAD) tools. The companies promoting front-end tools for schematic capture and simulation classed them as Computer-Aided Engineering (CAE). The term “automation” refers to the ability for end-users to augment, customize, and drive the capabilities of electronic design and verification tools by means of a scripting language and associated support utilities. There are a wide variety of programming languages available, but—excepting specialist application areas—the most commonly used by far are traditional C and its object-oriented offspring, C++. A gate-level netlist refers to a circuit representation at the level of individual logic gates, registers, and other simple functions. The netlist will also specify the connections (wires) between the various gates and functions. A component-level netlist refers to a circuit representation at the level of individual components. System programming languages such as C, C++, and Java™ are designed to allow programmers to build data structures, algorithms, and—ultimately—applications from the ground up.

Clive Max Maxfield

2009-01-01T23:59:59.000Z

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421

CONSTRAINING THE DISTRIBUTION OF DARK MATTER IN THE INNER GALAXY WITH AN INDIRECT DETECTION SIGNAL: THE CASE OF A TENTATIVE 130 GeV {gamma}-RAY LINE  

SciTech Connect

Dark matter distribution in the very inner region of our Galaxy is still debated. In N-body simulations, a cuspy dark matter halo density profile is favored. Several dissipative baryonic processes, however, are found to be able to significantly flatten dark matter distribution, and a cored dark matter halo density profile is possible. Baryons dominate the gravitational potential in the inner Galaxy, hence a direct constraint on the abundance of dark matter particles is rather challenging. Recently, a few groups have identified a tentative 130 GeV line signal in the Galactic center, which could be interpreted as the signal of dark matter annihilation. Using current 130 GeV line data and adopting the generalized Navarro-Frenk-White profile of the dark matter halo-local dark matter density {rho}{sub 0} = 0.4 GeV cm{sup -3} and r{sub s} = 20 kpc-we obtain a 95% confidence level lower (upper) limit on the inner slope of dark matter density distribution, {alpha} = 1.06 (the cross section of dark matter annihilation into {gamma}-rays ({sigma}v){sub {chi}{chi}{sub {yields}{sub {gamma}{gamma}}}} = 1.3 Multiplication-Sign 10{sup -27} cm{sup 3} s{sup -1}). Such a slope is consistent with the results of some N-body simulations and, if the signal is due to dark matter, suggests that baryonic processes may be unimportant.

Yang Ruizhi; Feng Lei; Li Xiang; Fan Yizhong, E-mail: yzfan@pmo.ac.cn [Key Laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China)

2013-06-20T23:59:59.000Z

422

Deeply virtual Compton scattering and generalized parton distributions at CLAS  

SciTech Connect

The exclusive electroproduction of real photons and mesons at high momentum transfer allows us to access the Generalized Parton Distributions (GPDs). The formalism of the GPDs provides a unified description of the hadronic structure in terms of quark and gluonic degrees of freedom. In particular, the Deeply Virtual Compton Scattering (DVCS), ep â e2p2Å , is one of the key reactions to determine the GPDs experimentally, as it is the simplest process that can be described in terms of GPDs. A dedicated experiment to study DVCS has been carried out in Hall B at Jefferson Lab. Beam-spin asymmetries, resulting from the interference of the Bethe-Heitler process and DVCS have been extracted over the widest kinematic range ever accessed for this reaction ( 1.2 < Q 2 < 3.7 (GeV/c 2, 0.09 < - t < 1.3 (GeV/c 2, 0.13 < x B < 0.46 . In this paper, the results obtained experimentally are shown and compared to GPD parametrizations.

Niccolai, Silvia

2008-11-01T23:59:59.000Z

423

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe  

Science Journals Connector (OSTI)

Abstract The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate “plateau” has been evidenced between 650 °C and 750 °C. Meanwhile, the Ge concentration x was rather steady in the 500 °C–700 °C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 °C, 550 °C and 675 °C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 °C down to 500 °C–550 °C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of ~ 7–8 when switching from 550 °C to 500 °C. For the same x, growth rate was nevertheless 3–9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 °C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B]subst. ~ 3.7 × 1020 cm?3. Surface B atoms otherwise catalysed H desorption, resulting in growth rates ~ 5 times higher for SiGe:B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 °C and 675 °C when adding \\{HCl\\} to the gaseous mixture. At 500 °C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding \\{HCl\\} had otherwise no clear impact on [B]subst.

J.M. Hartmann; V. Benevent; M. Veillerot; A. Halimaoui

2014-01-01T23:59:59.000Z

424

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV  

E-Print Network (OSTI)

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV

Coet, P

1975-01-01T23:59:59.000Z

425

nasa Office Of Inspector General  

E-Print Network (OSTI)

nasa Office Of Inspector General S E m I A N N u A L r E P O r T october 1, 2010­march 31, 2011 #12;#12;FROM THE INSPECTOR GENERAL In January 2011, the NASA Office of Inspector General (OIG) took the unusual step of sending a letter to the Chairs and Ranking Members of NASA's congressional oversight

Christian, Eric

426

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network (OSTI)

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

427

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced  

E-Print Network (OSTI)

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced one-step route was developed to synthesize crystalline CuGeO3 nanowire/graphene composites (CGCs). Crystalline CuGeO3 nanowires were tightly covered and anchored by graphene sheets, forming a layered structure

Lin, Zhiqun

428

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires  

Science Journals Connector (OSTI)

We experimentally studied the thermoelectric power factor of hole gas in individual Ge–Si core–shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect ...

Jaeyun Moon; Ji-Hun Kim; Zack C.Y. Chen; Jie Xiang; Renkun Chen

2013-02-08T23:59:59.000Z

429

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network (OSTI)

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

430

Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions  

SciTech Connect

We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

Petti, D. [Politecnico di Milano; Cantoni, M. [Politecnico di Milano; Rinaldi, C. [Politecnico di Milano; Brivio, S. [Politecnico di Milano; Bertacco, R. [Politecnico di Milano; Gazquez Alabart, Jaume [ORNL; Varela del Arco, Maria [ORNL

2011-01-01T23:59:59.000Z

431

A new measurement of the structure functions $P_{LL}-P_{TT}/epsilon$ and $P_{LT}$ in virtual Compton scattering at $Q^2=$ 0.33 (GeV/c)$^2$  

E-Print Network (OSTI)

The cross section of the $ep \\to e' p' \\gamma$ reaction has been measured at $Q^2 = 0.33$ (GeV/c)$^2$. The experiment was performed using the electron beam of the MAMI accelerator and the standard detector setup of the A1 Collaboration. The cross section is analyzed using the low-energy theorem for virtual Compton scattering, yielding a new determination of the two structure functions $P_LL}-P_{TT}/epsilon$ and $P_{LT}$ which are linear combinations of the generalized polarizabilities of the proton. We find somewhat larger values than in the previous investigation at the same $Q^2$. This difference, however, is purely due to our more refined analysis of the data. The results tend to confirm the non-trivial $Q^2$-evolution of the generalized polarizabilities and call for more measurements in the low-$Q^2$ region ($\\le$ 1 (GeV/c)$^2$).

The MAMI-A1 Collaboration; :; P. Janssens; L. Doria; P. Achenbach; C. Ayerbe Gayoso; D. Baumann; J. C. Bernauer; I. K. Bensafa; R. Böhm; D. Bosnar; E. Burtin; N. D'Hose; X. Defaÿ; M. Ding; M. O. Distler; H. Fonvieille; J. Friedrich; J. M. Friedrich; G. Laveissière; M. Makek; J. Marroncle; H. Merkel; U. Müller; L. Nungesser; B. Pasquini; J. Pochodzalla; O. Postavaru; M. Potokar; D. Ryckbosch; S. Sanchez Majos; B. S. Schlimme; M. Seimetz; S. Širca; G. Tamas; R. Van de Vyver; L. Van Hoorebeke; A. Van Overloop; Th. Walcher; M. Weinriefer

2008-03-06T23:59:59.000Z

432

Structure determination of Ag-Ge-S glasses using neutron diffraction  

Science Journals Connector (OSTI)

The structure of the superionic glass system (Ag2S)x(GeS2)1-x, for three compositions x=0.3, 0.4, 0.5, has been studied using neutron diffraction, and isotopic-substitution neutron-diffraction experiments have been performed on three silver isotope-substituted (107Ag,natAg,109Ag) samples of the composition (Ag2S)0.5(GeS2)0.5. The average short-range orderings of Ge-S, Ag-S, and Ge-Ag correlations were identified in the radial distribution functions for the isotopically substituted system of (Ag2S)0.5(GeS2)0.5. From the first and second differences in the three sets of isotopic-substitution neutron-diffraction data, the other three partial correlations (Ag-Ag, Ge-Ge, and S-S), were also identified. By examining unusually broad peaks in the Ag-Ag correlation function, it was concluded that the Ag-Ag distribution was rather homogeneous. We were also able to obtain further information by combining the first and second difference analyses, resulting in a structural model of a slightly elongated GeS4 tetrahedron with the local environment of Ag+ ions being threefold coordination by nonbridging sulphur ions. The medium-range order of the host framework was found to be a chainlike structure of linked corner-sharing GeS4 tetrahedra. Substantial changes in the first and second peaks in the distinct scattering functions i(Q) were found with composition and also with isotopic substitution. It was possible to explain the trends in the changes of the heights of these peaks in the structure factor by applying the void model for the first sharp diffraction peak. © 1996 The American Physical Society.

J. H. Lee; A. P. Owens; A. Pradel; A. C. Hannon; M. Ribes; S. R. Elliott

1996-08-01T23:59:59.000Z

433

Wide-band neutrino beams at 1000 GeV  

SciTech Connect

In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train. (WHK)

Malensek, A.; Stutte, L.

1983-04-11T23:59:59.000Z

434

Exotic decays of the 125 GeV Higgs boson  

Science Journals Connector (OSTI)

We perform an extensive survey of nonstandard Higgs decays that are consistent with the 125 GeV Higgs-like resonance. Our aim is to motivate a large set of new experimental analyses on the existing and forthcoming data from the Large Hadron Collider (LHC). The explicit search for exotic Higgs decays presents a largely untapped discovery opportunity for the LHC collaborations, as such decays may be easily missed by other searches. We emphasize that the Higgs is uniquely sensitive to the potential existence of new weakly coupled particles and provide a unified discussion of a large class of both simplified and complete models that give rise to characteristic patterns of exotic Higgs decays. We assess the status of exotic Higgs decays after LHC run I. In many cases we are able to set new nontrivial constraints by reinterpreting existing experimental analyses. We point out that improvements are possible with dedicated analyses and perform some preliminary collider studies. We prioritize the analyses according to their theoretical motivation and their experimental feasibility. This document is accompanied by a Web site that will be continuously updated with further information [http://exotichiggs.physics.sunysb.edu].

David Curtin; Rouven Essig; Stefania Gori; Prerit Jaiswal; Andrey Katz; Tao Liu; Zhen Liu; David McKeen; Jessie Shelton; Matthew Strassler; Ze’ev Surujon; Brock Tweedie; Yi-Ming Zhong

2014-10-13T23:59:59.000Z

435

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

436

APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE  

SciTech Connect

A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

2001-01-01T23:59:59.000Z

437

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

438

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

439

Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors  

NLE Websites -- All DOE Office Websites (Extended Search)

the Microstructure of Doped Clathrate and the Microstructure of Doped Clathrate and Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors Hsin Wang and Miaofang Chi, Oak Ridge National Laboratory Scientific challenge/problem: Clathrate and Skutterudite are known to be promising thermoelectric materials. The R&D groups at GM and ORNL have found that doping Clathrate (Ba 0.25 Co 4 Sb 12 ) with Yb and La and doping Skutterudite (Ba 8 Ga 16 Ge 30 ) with Ni improve the thermoelectrical properties significantly. The goal of the microscopy characterization is to fundamentally understand how the dopants control the materials properties. Two questions need to be answered at the current stage of our experimental work: how the microstructures are tailored by the dopants and how the dopants distribute

440

Generalized parton distributions from nucleon form factor data  

E-Print Network (OSTI)

We present a simple empirical parameterization of the x- and t-dependence of generalized parton distributions at zero skewness, using forward parton distributions as input. A fit to experimental data for the Dirac, Pauli and axial form factors of the nucleon allows us to discuss quantitatively the interplay between longitudinal and transverse partonic degrees of freedom in the nucleon ("nucleon tomography"). In particular we obtain the transverse distribution of valence quarks at given momentum fraction x. We calculate various moments of the distributions, including the form factors that appear in the handbag approximation to wide-angle Compton scattering. This allows us to estimate the minimal momentum transfer required for reliable predictions in that approach to be around |t|~3 GeV^2. We also evaluate the valence contributions to the energy-momentum form factors entering Ji's sum rule.

M. Diehl; Th. Feldmann; R. Jakob; P. Kroll

2004-08-16T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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441

Agreements --General/Regional 171 GENERAL/REGIONAL  

E-Print Network (OSTI)

; Armenia; Australia; Austria; Azerbaijan; Bangladesh; Belgium; Bolivia; Brazil; Bulgaria; Burkina Faso African convention on the conservation of nature and natural resources March 25, 1957 General Belgium

Wolf, Aaron

442

OLEDS FOR GENERAL LIGHTING  

SciTech Connect

The goal of this program was to reduce the long term technical risks that were keeping the lighting industry from embracing and developing organic light-emitting diode (OLED) technology for general illumination. The specific goal was to develop OLEDs for lighting to the point where it was possible to demonstrate a large area white light panel with brightness and light quality comparable to a fluorescence source and with an efficacy comparable to that of an incandescent source. it was recognized that achieving this would require significant advances in three area: (1) the improvement of white light quality for illumination, (2) the improvement of OLED energy efficiency at high brightness, and (3) the development of cost-effective large area fabrication techniques. The program was organized such that, each year, a ''deliverable'' device would be fabricated which demonstrated progress in one or more of the three critical research areas. In the first year (2001), effort concentrated on developing an OLED capable of generating high illumination-quality white light. Ultimately, a down-conversion method where a blue OLED was coupled with various down-conversion layers was chosen. Various color and scattering models were developed to aid in material development and device optimization. The first year utilized this approach to deliver a 1 inch x 1 inch OLED with higher illumination-quality than available fluorescent sources. A picture of this device is shown and performance metrics are listed. To their knowledge, this was the first demonstration of true illumination-quality light from an OLED. During the second year, effort concentrated on developing a scalable approach to large area devices. A novel device architecture consisting of dividing the device area into smaller elements that are monolithically connected in series was developed. In the course of this development, it was realized that, in addition to being scalable, this approach made the device tolerant to the most common OLED defect--electrical shorts. This architecture enabled the fabrication of a 6 inch x 6 inch OLED deliverable for 2002. A picture of this deliverable is shown and the performance metrics are listed. At the time, this was the highest efficiency, highest lumen output illumination-quality OLED in existence. The third year effort concentrated on improving the fabrication yield of the 6 inch x 6 inch devices and improving the underlying blue device efficiency. An efficiency breakthrough was achieved through the invention of a new device structure such that now 15 lumen per watt devices could be fabricated. A 2 feet x 2 feet OLED panel consisting of sixteen 6 inch x 6 inch high efficiency devices tiled together was then fabricated. Pictures of this panel are shown with performance metrics listed. This panel met all project objectives and was the final deliverable for the project. It is now the highest efficiency, highest lumen output, illumination-quality OLED in existence.

Anil Duggal; Don Foust; Chris Heller; Bill Nealon; Larry Turner; Joe Shiang; Nick Baynes; Tim Butler; Nalin Patel

2004-02-29T23:59:59.000Z

443

DOE to Develop Multi-Megawatt Offshore Wind Turbine with General Electric |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

to Develop Multi-Megawatt Offshore Wind Turbine with General to Develop Multi-Megawatt Offshore Wind Turbine with General Electric DOE to Develop Multi-Megawatt Offshore Wind Turbine with General Electric March 9, 2006 - 11:44am Addthis Contract Valued at $27 million, supports President Bush's Advanced Energy Initiative WASHINGTON, D.C. - The U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) in Golden, Colorado, has signed a $27 million, multi-year contract with the General Electric Company (GE) to develop a new offshore wind power system over the next several years. Approximately $8 million of the offshore wind project will be cost-shared by DOE. "Offshore wind technology, another aspect of President Bush's Advanced Energy Initiative, can reduce our dependence on foreign energy sources as

444

Wheeler County, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

°, -100.3497895° °, -100.3497895° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.3830893,"lon":-100.3497895,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

445

Wheeler County, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

66°, -120.0829624° 66°, -120.0829624° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.6659766,"lon":-120.0829624,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

446

Wheeler AFB, Hawaii: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFB, Hawaii: Energy Resources AFB, Hawaii: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 21.481945°, -158.041423° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":21.481945,"lon":-158.041423,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

447

Wheeler County, Nebraska: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

°, -98.5721016° °, -98.5721016° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.8372138,"lon":-98.5721016,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

448

MANLEY, STEVEN L., KELLY GOODWIN, AND WHEELER J ...  

Science Journals Connector (OSTI)

Laboratory production of bromoform, methylene bromide, and methyl iodide by ..... ration. J. Phycol. 21: 154-167. CLASS, T., AND K. BALLSCTHMITER. 1988.

2000-03-19T23:59:59.000Z

449

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

agreement is to achieve very low levels of NO, emissions from pulverized coal fired boiler systems by employing a novel system level integration between the PC combustion...

450

Electric Two-Wheelers in China: Promise Progress and Potential  

E-Print Network (OSTI)

growing use of lead batteries. Over 90 percent of electricof the largest electric scooters use even heavier batteries.and even recycling lead batteries can generate substantial

Cherry, Christopher

2010-01-01T23:59:59.000Z

451

Wheeler County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

2.6915429° 2.6915429° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.0999794,"lon":-82.6915429,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

452

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAl...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE is a subawardee under the 42677 award and is eligible to participate in the class waiver. The subject waiver is only for inventions of GE made under the subject cooperative...

453

REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

COMPANY FOR AN ADVANCE COMPANY FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER DEPARTMENT OF ENERGY CONTRACT NO. DE-ACZ1-93MC30244; DOE WAIVER DOCKET W(A)-93-031 (ORO-560] General Electric Company (GE) has made a timely request for an advance waiver -o worldwide rights in Subject Inventions made in the course of or under .:oartment of Energy (DOE) Contract No. OE-AC21-93MC30244. The scope of the work calls for the development of two select advanced gas turbine systems, one for the industrial sector and the other for the utility market. The work is being done under the Advance Turbine Systems Program and is sponsored by the Office of Fossil Energy. The dollar amount of the contract Is S4,629,360 with GE cost sharing 51,214,501, 26.2% of the contract.

454

REQUEST BY THE GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER LOCKHEED MARTIN ENERGY RESEARCH CORPORATION SUBCONTRACT NO. 85X-SZ581C UNDER PRIME CONTRACT NO. DE- AC05-960R22464; DOE WAIVER DOCKET W(A)-98-008 [ORO-740] The General Electric Company (GE) has made a timely request for an advance waiver to worldwide rights in Subject Inventions made in the course of or under Lockheed Martin Energy Research (LMER) Subcontract No. 85X-SZ581C under LMER Prime Contract No. DE-AC05-960R22464. In addition, GE wishes to acquire a nonexclusive, paid-up irrevocable, worldwide license to make, have made, and use certain subcontractors' inventions and discoveries made under this subcontract when the subcontractor has agreed to such license. The scope of the work is to achieve a cost

455

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

NT0005310; W(A)-09-048, CH-1511 The Petitioner, General Electric Global Research (GE) was awarded this cooperative agreement for the performance of work entitled, "Novel High Capacity Oligomers for Low Cost C02 Capture." According to its response to question 2, GE states that it will investigate the technical and economic feasibility of developing novel oligomeric silicone solvents for C02 capture. Key deliverable include identifying a group of solvents that have been demonstrated to have a C02 capacity of at least 25% greater than aqueous monoethanolamine (MEA), and are predicted to achieve 90% C 0 2 capture efficiency and less than a 50% increase in COE (with the potential to achieve less than a 35% increase in COE with further optimization.). Other

456

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

COOPERATIVE COOPERATIVE AGREEMENT NO. DE-FC26-05NT42643; W(A)-06-002, CH-1350 The Petitioner, General Electric Company, (GE), was awarded a cooperative agreement for the performance of work entitled, "Advanced IGCC/Hydrogen Gas Turbine Development." The purpose of the cooperative agreement is to develop, validate, and accelerate the commercial application for a hydrogen-fueled gas turbine for use in Integrated Gasification Combined Cycle (IGCC) and FutureGen type plants. The proposed gas turbine will support high efficiency, low NOx, and competitive cost goals as identified by the Department of Energy. This waiver is only for inventions of GE made under its cooperative agreement. The total estimated cost of the cooperative agreement is $65,199,369 with the DOE share

457

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH CENTER FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

71 71 2; W(A)-2011-067 ; CH-1639 General Electric Global Research Center (GE-GRC) requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Model Based Optimal Sensor Network Design for Condition Monitoring in an IGCC Plant". The purpose of the cooperative agreement is to develop a systematic model-based approach for addressing the problem of optimal sensor placement (OSP) in a sensor network used for condition monitoring of key process equipment in an IGCC plant , namely, gasifier refractory lining and RSC fouling . This waiver is for inventions of GE-GRC on ly. The work under this cooperative agreement is expected to take place from August 20, 2010 through December 30, 2012, at a total cost of $1

458

REQUEST BY THE GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER PHASE IV OF UT-BATELLE SUBCONTRACT NO, 85X-SZ581C UNDER PRIME CONTRACT NO. DE-AC05-000R22725; DOE WAIVER DOCKET W(A)-02-010 [ORO-769] The General Electric Company (GE) has made a timely request for an advance waiver to worldwide rights in Subject Inventions made in the course of or under Phase IV of UT-Battelle, LLC Subcontract No. 85X-SZ581C under Prime Contract No DE-AC05- 00OR22725. In addition, GE wishes to acquire a nonexclusive, paid-up irrevocable, worldwide license to make, have made, and use certain subcontractors' inventions and discoveries made under this subcontract when the subcontractor has agreed to such license. The work is sponsored by the Office of Industrial Technologies.

459

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC36-02GO11100 ENTITLED "DEVELOPMENT AND TEST OF A PROTO- TYPE 100 MVA SUPERCONDUCTING GENERATOR"; W(A)-02-033; CH-1113 As set out in the attached waiver petition and in subsequent discussions with DOE Patent Counsel, General Electric company (GE) has requested an advance waiver of domestic and foreign patent rights for all subject inventions made under the above-identified cooperative agreement by its employees and its subcontractors' employees, regardless of tier, except inventions made by subcontractors eligible to retain title to inventions pursuant to P.L. 96-517, as amended, and National Laboratories. Referring to item 2 of GE's waiver petition, the purpose of this agreement encompasses

460

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH CENTER FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

68; W{A)-09-025; CH-1490 68; W{A)-09-025; CH-1490 General· Electric Global Research Center (GE-GRC), requests an advance waiver of domestic and foreign patent tights for all subject inventions made under the above cooperative agreement for work entitled, "Fuel Flexible Combustion Systems for High-Efficiency Utilization of Opportunity Fuels in Gas Turbines." The purpose of the cooperative agreement is to define, develop, and test new fuel nozzle technology concepts for gas turbine operation on a wide spectrum of opportunity fuels and/or fuel blends. Successful technology concepts will be developed and tested through full pressure, full temperature single nozzle component combustion testing. This waiver is for inventions of GE-GRC only. The work under this subcontract is expected to take place from October 1, 2008

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DOMESTIC AND FOREIGN PATENT RIGHTS UNDER NREL DOMESTIC AND FOREIGN PATENT RIGHTS UNDER NREL SUBCONTRACT NO. NAD-1-30605-01 UNDER DOE CONTRACT NO. DE- AC36-98GO10337; W(A)-03-034; CH-1158 As set out in the attached waiver petition and in subsequent discussions with DOE Patent Counsel, General Electric Company (GE) has requested an advance waiver of domestic and foreign patent rights for all subject inventions made under the above-identified subcontract by its employees and its subcontractors' employees, regardless of tier, except inventions made by subcontractors eligible to retain title to inventions pursuant to P.L. 96-517, as amended, and National Laboratories. Referring to item 2 of GE's waiver petition, the purpose of this agreement encompasses the analysis, design, fabrication and testing of a universal interconnect system for interfacing

462

Measurement of the generalized form factors near threshold via ?*p ? n?+ at high Q2  

We report the first extraction of the pion-nucleon multipoles near the production threshold for the n?+ channel at relatively high momentum transfer (Q2 up to 4.2 GeV2). The dominance of the s-wave transverse multipole (E0+), expected in this region, allowed us to access the generalized form factor G1 within the light-cone sum rule (LCSR) framework as well as the axial form factor GA. The data analyzed in this work were collected by the nearly 4? CEBAF Large Acceptance Spectrometer (CLAS) using a 5.754-GeV electron beam on a proton target. The differential cross section and the ?-N multipole E0+/GD were measured using two different methods, the LCSR and a direct multipole fit. The results from the two methods are found to be consistent and almost Q2 independent.

Park, K; Adhikari, K P; Adikaram, D; Anghinolfi, M; Baghdasaryan, H; Ball, J; Battaglieri, M; Batourine, V; Bedlinskiy, I; Bennett, R P; Biselli, A S; Bookwalter, C; Boiarinov, S; Branford, D; Briscoe, W J; Brooks, W K; Burkert, V D; Carman, D S; Celentano, A; Chandavar, S; Charles, G; Cole, P L; Contalbrigo, M; Crede, V; D'Angelo, A; Daniel, A; Dashyan, N; De Vita, R; De Sanctis, E; Deur, A; Djalali, C; Doughty, D; Dupre, R; El Alaoui, A; El Fassi, L; Euginio, P; Fedotov, G; Fradi, A; Gabrielyan, M Y; Gevorgyan, N; Gilfoyle, G P; Giovanetti, K L; Girod, F X; Goetz, J T; Gohn, W; Golovatch, E; Graham, L; Griffioen, K A; Guidal, M; Guo, L; Hafidi, K; Hakobyan, H; Hanretty, C; Heddle, D; Hicks, K; Holtrop, M; Ilieva, Y; Ireland, D G; Ishkhanov, B S; Isupov, E L; Jenkins, D; Jo, H S; Joo, K; Khandaker, M; Khertarpal, P; Kim, A; Kim, W; Klein, F J; Kubarovsky, A; Kubarovsky, V; Kuhn, S E; Kuleshov, S V; Kvaltine, N D; Livingston, K; Lu, H Y; MacGregor, J D; Markov, N; Mayer, M; McKinnon, B; Mestayer, M D; Meyer, C A; Mineeva, T; Mirazita, M; Mokeev, V; Moutarde, H; Munevar, E; Nadel-Turonski, P; Nasseripour, R; Niccolai, S; Niculescu, G; Niculescu, I; Osipenko, M; Ostrovidov, A I; Paolone, M; Pappalardo, L; Paremuzyan, R; Park, S; Anefalos Pereira, S; Phelps, E; Pisano, S; Pogorelko, O; Pozdniakov, S; Price, J W; Procureur, S; Prok, Y; Ricco, G; Rimal, D; Ripani, M; Ritchie, B G; Rosner, G; Rossi, P; Sabati ee, F; Saini, M S; Salgado, C; Schott, D; Schumacher, R A; Seraydaryan, H; Sharabian, Y G; Smith, E S; Smith, G D; Sober, D I; Sokhan, D; Stepanyan, S S; Stepanyan, S; Stoler, P; Strakovsky, I I; Strauch, S; Taiuti, M; Tang, W; Taylor, C E; Tian, Y; Tkachenko, S; Trivedi, A; Ungaro, M; Vernarsky, B; Vlassov, A V; Voutier, E; Watts, D P; Weygand, D P; Wood, M H; Zachariou, N; Zhao, B; Zhao, Z W

2012-03-26T23:59:59.000Z

463

REQUEST BY GENERAL ELECTRIC COMPANY, CORPORATE RESEARCH AND DEVELOPMENT, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

COMPANY, CORPORATE COMPANY, CORPORATE RESEARCH AND DEVELOPMENT, FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER DEPARTMENT OF ENERGY CONTRACT NO. DE-AC21-92MC29110; DOE WAIVER DOCKET W(A)-93-011, [ORO-551] General Electric Company, Corporate Research and Development (GE-CRD) has made a timely request for an advance waiver to worldwide rights in Subject Inventions made in the course of or under Department of Energy (DOE) Contract No. DE-AC21-92MC29110. The scope of the work calls for the development of a low-cost method for sorption and destruction of chlorinated volatile organic compound (CVOC) vapors using recyclable organic polymers and biodegradation. The work is sponsored by the Office of Fossil Energy. The dollar amount of the contract is $627,560 with GE-CRD cost sharing

464

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method  

SciTech Connect

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

2013-10-21T23:59:59.000Z

465

CPFFS Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

2, 6/14/13) Exhibit A General Conditions 2, 6/14/13) Exhibit A General Conditions Page 1 of 20 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

466

EFS Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

2, 6/14/13) Exhibit A General Conditions 2, 6/14/13) Exhibit A General Conditions Page 1 of 26 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2 AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Apr 2013) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

467

EFS Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

1, 4/9/13) Exhibit A General Conditions 1, 4/9/13) Exhibit A General Conditions Page 1 of 39 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2 AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Apr 2013) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

468

AES Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

2, 6/14/13) Exhibit A General Conditions 2, 6/14/13) Exhibit A General Conditions Page 1 of 18 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

469

SFS Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

2, 6/14/13) Exhibit A General Conditions 2, 6/14/13) Exhibit A General Conditions Page 1 of 16 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

470

A study of generalized inverses  

E-Print Network (OSTI)

A STUDY OF GENERALIZED INVERSES A Thesis by NANCY LEE MCKINNEY Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE August 1973 Major Subject: Mathematics A... STUDY OF GENERALIZED INVERSES A Thesis by NANCY LEE MCKINNEY Approved as to style and content by: airman o ittee Hea o epartment e er Me er August 1973 ABSTRACT A Study of Generalized Inverses. (August 1973) Nancy Lee NcKinney, B. A...

McKinney, Nancy Lee

1973-01-01T23:59:59.000Z

471

SFS Exhibit A General Conditions  

NLE Websites -- All DOE Office Websites (Extended Search)

1, 4/9/13) Exhibit A General Conditions 1, 4/9/13) Exhibit A General Conditions Page 1 of 29 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT CONTRACTOR (Jun 2009) ............................................................................. 4 GC-4 SUBCONTRACT INTERPRETATION (Jun 2009) ...................................................................... 4 GC-5 NOTICE TO PROCEED (Jul 2011)............................................................................................. 4

472

Extremality conditions for generalized channels  

E-Print Network (OSTI)

A generalized channel is a completely positive map that preserves trace on a given subspace. We find conditions under which a generalized channel with respect to a positively generated subspace J is an extreme point in the set of all such generalized channels. As a special case, this yields extremality conditions for quantum protocols. In particular, we obtain new extremality conditions for quantum 1-testers with 2 outcomes, which correspond to yes/no measurements on the set of quantum channels.

Anna Jencova

2012-04-12T23:59:59.000Z

473

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.  

Office of Science (SC) Website

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where

474

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

475

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

476

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

477

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner

478

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

479

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

480

Theoretical study of the thermoelectric properties of SiGe nanotubes  

E-Print Network (OSTI)

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

Wei, J; Tan, X J; Cheng, L; Zhang, J; Fan, D D; Shi, J; Tang, X F

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wheeler ge general" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition  

Science Journals Connector (OSTI)

Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to...

Leng, Jian; Zhao, Li; Ji, Yiqin; Liu, Huasong; Zhuang, Kewen

2014-01-01T23:59:59.000Z

482

5 Top Trends From the Women and Technology Symposium | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

disciplines. So this year, we wanted to take it to the next level. Why not leverage our "Mini-GE" (Chairmen Jeff Immelt's nickname for our India technology center), where all of...

483

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

484

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

485

Particle production models in HETC88 in the energy range 3 to 30 GeV  

SciTech Connect

HETC88 is the latest version of the high-energy transport code HETC that has been used to provide accelerator shield and calorimeter design data for many years. (See Refs. 3, 4, and 5 and the refs. given therein). This version of the code is described and results are compared with experimental data in Ref. 1. The high-energy particle production model in HETC88 is a multi-chain fragmentation model based on the work of J. Ranft and S. Ritter (see Ref. 6 and the refs. given therein). The fragmentation model used in HETC88 is described and compared with experimental data. In HETC88, the fragmentation model is used at energies {ge} 5 GeV, a scaling model is used in energy range 3 to 5 GeV, and the intranuclear cascade model is used at energies {le} 3 GeV. 10 refs., 1 fig.

Alsmiller, R.G. Jr.; Alsmiller, F.S.

1991-01-01T23:59:59.000Z

486

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network (OSTI)

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

487

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network (OSTI)

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

488

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

489

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

490

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

491

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network (OSTI)

We report a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction ...

Conrad, Janet

492

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network (OSTI)

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

493

Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism  

SciTech Connect

Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2013-02-21T23:59:59.000Z

494

Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera  

E-Print Network (OSTI)

noise, device matching,and power performance.The performance evolution ofSiGe HBT technologyin recent. ECS Transactions, 3 (7) 341-353 (2006) 10.1149/1.2355832, copyright The Electrochemical Society 341

Rieh, Jae-Sung

495

Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations  

Science Journals Connector (OSTI)

The electronic structure of Ge/RbF/GaAs(100) system ... known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. ... obtained results, compared with those of...

Barbara Stankiewicz

496

Investigation of lateral gated quantum devices in Si/SiGe heterostructures  

E-Print Network (OSTI)

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

Lai, Andrew P. (Andrew Pan)

2013-01-01T23:59:59.000Z

497

Super-Resolution ROM Disc Using GeAl Reflective Absorption Layer  

Science Journals Connector (OSTI)

We have developed a super-resolution ROM disc using a newly designed GeAl reflective absorption layer. The optical resolution limit in high readout power expanded more than 1.5 times...

Aoki, Kazuhiko; Tanabe, Hideki; Ohkubo, Shuichi; Kariyada, Eiji; Katayama, Ryuichi; Yamanaka, Yutaka

498

Optical gain and lasing from band-engineered Ge-on-Si at room temperature  

E-Print Network (OSTI)

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...

Liu, Jifeng

499

Black GE based on crystalline/amorphous core/shell nanoneedle arrays  

SciTech Connect

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04T23:59:59.000Z

500

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications  

SciTech Connect

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge{sup 4+} state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

Ito, Toshihide; Mitani, Yuuichiro; Nakasaki, Yasushi; Koike, Masahiro [Corporate Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582 (Japan); Konno, Takuya; Matsuba, Hiroshi [Corporate Manufacturing Engineering Center, Toshiba Corporation, Isogo-ku, Yokohama 235-0017 (Japan); Kai, Tetsuya; Kaneko, Wakana; Ozawa, Yoshio [Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, Isogo-ku, Yokohama 235-8522 (Japan)

2012-02-13T23:59:59.000Z