Sample records for wafer bonding national

  1. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    DOE Patents [OSTI]

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03T23:59:59.000Z

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  2. Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers

    E-Print Network [OSTI]

    Akin, Tayfun

    microscopy, profilometer and wafer bow measurements. Plasma-activated direct bonding of DOI wafers to thermalPlasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon (CMP) on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. Our results

  3. Wafer bonding : mechanics-based models and experiments

    E-Print Network [OSTI]

    Turner, Kevin Thomas, 1977-

    2004-01-01T23:59:59.000Z

    Direct wafer bonding has emerged as an important technology in the manufacture of silicon-on-insulator substrates (SOI), microelectromechanical systems (MEMS), and three-dimensional integrated circuits (3D IC's). While the ...

  4. Influence of the bonding front propagation on the wafer stack curvature

    SciTech Connect (OSTI)

    Navarro, E. [SOITEC—Parc Technologique des Fontaines, 38190 Bernin (France); SIMaP—Grenoble-INP, 1340 rue de la Piscine, 38402 St. Martin d'Hčres (France); Bréchet, Y. [SIMaP—Grenoble-INP, 1340 rue de la Piscine, 38402 St. Martin d'Hčres (France); Barthelemy, A.; Radu, I. [SOITEC—Parc Technologique des Fontaines, 38190 Bernin (France); Pardoen, T. [Institute of Mechanics, Materials and Civil Engineering (iMMC), Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium); Raskin, J.-P. [Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

    2014-08-11T23:59:59.000Z

    The influence of the dynamics of the direct wafer bonding process on the curvature of the final wafer stack is investigated. An analytical model for the final curvature of the bonded wafers is developed, as a function of the different load components acting during the bonding front propagation, using thin plate theory and considering a strain discontinuity locked at the bonding interface. Experimental profiles are measured for different bonding conditions and wafer thicknesses. A very good agreement with the model prediction is obtained and the influence of the thin air layer trapped in-between the two wafers is demonstrated. The proposed model contributes to further improvement of the bonding process, in particular, for the stacking of layers of electronic devices, which requires a high accuracy of wafer-to-wafer alignment and a very low distortion level.

  5. Chemical strategies for die/wafer submicron alignment and bonding.

    SciTech Connect (OSTI)

    Martin, James Ellis; Baca, Alicia I.; Chu, Dahwey; Rohwer, Lauren Elizabeth Shea

    2010-09-01T23:59:59.000Z

    This late-start LDRD explores chemical strategies that will enable sub-micron alignment accuracy of dies and wafers by exploiting the interfacial energies of chemical ligands. We have micropatterned commensurate features, such as 2-d arrays of micron-sized gold lines on the die to be bonded. Each gold line is functionalized with alkanethiol ligands before the die are brought into contact. The ligand interfacial energy is minimized when the lines on the die are brought into registration, due to favorable interactions between the complementary ligand tails. After registration is achieved, standard bonding techniques are used to create precision permanent bonds. We have computed the alignment forces and torque between two surfaces patterned with arrays of lines or square pads to illustrate how best to maximize the tendency to align. We also discuss complex, aperiodic patterns such as rectilinear pad assemblies, concentric circles, and spirals that point the way towards extremely precise alignment.

  6. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  7. Highly Efficient Vertical Outgassing Channels for Robust, Void-Free, Low-Temperature Direct Wafer Bonding

    E-Print Network [OSTI]

    Bowers, John

    molecules diffusion at bonding interface to VOCs. Conventional anneal time of 12-18 hours required to bond Bonding Di Liang1 , Erik A. Lucero2 , John E. Bowers1 1 Department of Electrical and Computer Engineering wafer bonding is favored for dissimilar materials integration, particularly in III-V compound

  8. Propagation of guided Lamb waves in bonded specimens using piezoelectric wafer active sensors

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Propagation of guided Lamb waves in bonded specimens using piezoelectric wafer active sensors and principles used for generation and propagation of ultrasonic guided waves (Lamb waves) using piezoelectric wafer active sensors (PWAS). Keywords: Ultrasonic, Lamb waves, Damage detection, NDE, Wave propagation

  9. Eutectic bonding of a Ti sputter coated, carbon aerogel wafer to a Ni foil

    SciTech Connect (OSTI)

    Jankowski, A.F.; Hayes, J.P.; Kanna, R.L.

    1994-06-01T23:59:59.000Z

    The formation of high energy density, storage devices is achievable using composite material systems. Alternate layering of carbon aerogel wafers and Ni foils with rnicroporous separators is a prospective composite for capacitor applications. An inherent problem exists to form a physical bond between Ni and the porous carbon wafer. The bonding process must be limited to temperatures less than 1000{degrees}C, at which point the aerogel begins to degrade. The advantage of a low temperature eutectic in the Ni-Ti alloy system solves this problem. Ti, a carbide former, is readily adherent as a sputter deposited thin film onto the carbon wafer. A vacuum bonding process is then used to join the Ni foil and Ti coating through eutectic phase formation. The parameters required for successfld bonding are described along with a structural characterization of the Ni foil-carbon aerogel wafer interface.

  10. Wafer Bonding and Layer Transfer Processes for High Efficiency Solar Cells

    SciTech Connect (OSTI)

    Zahler, J. M.; Fontcuberta i Morral, A.; Ahn, C. G.; Atwater, H. A.; Wanlass, M. W.; Chu, C.; Iles, P. A.

    2003-05-01T23:59:59.000Z

    A wafer-bonded four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga0.5In0.5P subcells that could reach one-sun AM0 efficiencies of 35.4% is described. The design relies on wafer-bonding and layer transfer for integration of non-lattice-matched subcells. Wafer bonding and layer transfer processes have shown promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga0.5In0.5P subcells. Additionally, wafer bonded Ge/Si substrates offer the possibility to improve the mechanical performance of existing triple-junction solar cell designs, while simultaneously reducing their cost. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current-voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 W?cm2 for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.

  11. SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)

    E-Print Network [OSTI]

    SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a) M. T. Currie; accepted 4 April 2003 SiGe-free strained Si on insulator substrates were fabricated by wafer bonding even after SiGe layer removal. The strain in the structure is thermally stable during 1000 °C anneals

  12. Wafer bonded virtual substrate and method for forming the same

    DOE Patents [OSTI]

    Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcuberta i (Paris, FR)

    2007-07-03T23:59:59.000Z

    A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

  13. Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Gianni Taraschi,a)

    E-Print Network [OSTI]

    Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Gianni Taraschi,a) Thomas A 02139 Received 13 April 2001; accepted 30 January 2002 Relaxed SiGe-on-insulator SGOI was fabricated using a bond/etch-back process. Ultrahigh-vacuum chemical vapor deposition was used to grow a SiGe

  14. Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    -bonded multi-junction solar cells Dietrich Häussler a , Lothar Houben b , Stephanie Essig c , Mert Kurttepeli online 20 July 2013 Keywords: Multi-junction solar cell Wafer bonding Interfaces Aberration corrected and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar

  15. Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance

    SciTech Connect (OSTI)

    C.A. Wang; P.G. Murphy; P.W. O'Brien; D.A. Shiau; A.C. Anderson; Z.L. Liau; D.M. Depoy; G. Nichols

    2002-08-12T23:59:59.000Z

    This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.

  16. Integrated optical MEMS using through-wafer vias and bump-bonding.

    SciTech Connect (OSTI)

    McCormick, Frederick Bossert; Frederick, Scott K.

    2008-01-01T23:59:59.000Z

    This LDRD began as a three year program to integrate through-wafer vias, micro-mirrors and control electronics with high-voltage capability to yield a 64 by 64 array of individually controllable micro-mirrors on 125 or 250 micron pitch with piston, tip and tilt movement. The effort was a mix of R&D and application. Care was taken to create SUMMiT{trademark} (Sandia's ultraplanar, multilevel MEMS technology) compatible via and mirror processes, and the ultimate goal was to mate this MEMS fabrication product to a complementary metal-oxide semiconductor (CMOS) electronics substrate. Significant progress was made on the via and mirror fabrication and design, the attach process development as well as the electronics high voltage (30 volt) and control designs. After approximately 22 months, the program was ready to proceed with fabrication and integration of the electronics, final mirror array, and through wafer vias to create a high resolution OMEMS array with individual mirror electronic control. At this point, however, mission alignment and budget constraints reduced the last year program funding and redirected the program to help support the through-silicon via work in the Hyper-Temporal Sensors (HTS) Grand Challenge (GC) LDRD. Several months of investigation and discussion with the HTS team resulted in a revised plan for the remaining 10 months of the program. We planned to build a capability in finer-pitched via fabrication on thinned substrates along with metallization schemes and bonding techniques for very large arrays of high density interconnects (up to 2000 x 2000 vias). Through this program, Sandia was able to build capability in several different conductive through wafer via processes using internal and external resources, MEMS mirror design and fabrication, various bonding techniques for arrayed substrates, and arrayed electronics control design with high voltage capability.

  17. Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-to-Silicon Photonic

    E-Print Network [OSTI]

    Bowers, John

    required temperature for strong covalent bond for- mation and greater diffusion efficiency of gasLow-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III­V Compound Semiconductors-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2

  18. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    SciTech Connect (OSTI)

    Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

    2014-08-01T23:59:59.000Z

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup ?2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  19. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  20. A Batch Wafer Scale LIGA Assembly and Packaging Technique vai Diffusion Bonding

    SciTech Connect (OSTI)

    Christenson, T.R.; Schmale, D.T.

    1999-01-27T23:59:59.000Z

    A technique using diffusion bonding (or solid-state welding) has been used to achieve batch fabrication of two- level nickel LIGA structures. Interlayer alignment accuracy of less than 1 micron is achieved using press-fit gauge pins. A mini-scale torsion tester was built to measure the diffusion bond strength of LIGA formed specimens that has shown successful bonding at temperatures of 450"C at 7 ksi pressure with bond strength greater than 100 Mpa. Extensions to this basic process to allow for additional layers and thereby more complex assemblies as well as commensurate packaging are discussed.

  1. High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

    SciTech Connect (OSTI)

    Neubauer, H.; Hoffmann, S.; Kanbach, M.; Haber, J.; Kalbfleisch, S.; Krüger, S. P.; Salditt, T., E-mail: tsaldit@gwdg.de [Institut für Röntgenphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2014-06-07T23:59:59.000Z

    We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 10{sup 6} have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.

  2. Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

    E-Print Network [OSTI]

    Isaacson, David M.

    We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

  3. High-? Al{sub 2}O{sub 3} material in low temperature wafer-level bonding for 3D integration application

    SciTech Connect (OSTI)

    Fan, J., E-mail: fanji@hust.edu.cn; Tu, L. C. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)] [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Tan, C. S. [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)] [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-03-15T23:59:59.000Z

    This work systematically investigated a high-? Al{sub 2}O{sub 3} material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al{sub 2}O{sub 3} layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300?°C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO{sub 2}), a higher interfacial adhesion energy (?11.93 J/m{sup 2}) and a lower helium leak rate (?6.84 × 10{sup ?10} atm.cm{sup 3}/sec) were detected for samples bonded using Al{sub 2}O{sub 3}. More importantly, due to the excellent thermal conductivity performance of Al{sub 2}O{sub 3}, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

  4. Structured wafer for device processing

    SciTech Connect (OSTI)

    Okandan, Murat; Nielson, Gregory N

    2014-11-25T23:59:59.000Z

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  5. Structured wafer for device processing

    DOE Patents [OSTI]

    Okandan, Murat; Nielson, Gregory N

    2014-05-20T23:59:59.000Z

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  6. Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding

    E-Print Network [OSTI]

    Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer, uniform thickness, low defect density, monocrystalline SiGe alloys and strained Si on any desired substrate was developed, allowing for the creation of SiGe-on-insulator and strained Si-on-insulator. After

  7. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16T23:59:59.000Z

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  8. GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding

    SciTech Connect (OSTI)

    C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

    2002-12-18T23:59:59.000Z

    A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

  9. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding

    SciTech Connect (OSTI)

    Yu, X. [IHP (Germany); Vyvenko, O. [IHP/BTU Joint Lab (Germany); Kittler, M.; Seifert, W. [IHP (Germany); Mtchedlidze, T. [IHP/BTU Joint Lab (Germany); Arguirov, T. [IHP (Germany); Reiche, M. [MPI fuer Mikrostrukturphysik (Germany)

    2007-04-15T23:59:59.000Z

    Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.

  10. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    SciTech Connect (OSTI)

    Atwater, H. A.

    2008-11-01T23:59:59.000Z

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  11. Comparing systemic risk in European government bonds and national indices

    E-Print Network [OSTI]

    Jurczyk, Jan; Morgenstern, Ingo

    2015-01-01T23:59:59.000Z

    It has been shown, that the systemic risk contained in financial markets can be indicated by the change of cross-correlation between different indices and stocks. This change is tracked by using principle component analysis (PCA). We use this technique to investigate the systemic risk contained in European economy by comparing government long term bonds and indices.

  12. Micro-miniature gas chromatograph column disposed in silicon wafers

    DOE Patents [OSTI]

    Yu, Conrad M. (Antioch, CA)

    2000-01-01T23:59:59.000Z

    A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

  13. Three wafer stacking for 3D integration.

    SciTech Connect (OSTI)

    Greth, K. Douglas; Ford, Christine L.; Lantz, Jeffrey W.; Shinde, Subhash L.; Timon, Robert P.; Bauer, Todd M.; Hetherington, Dale Laird; Sanchez, Carlos Anthony

    2011-11-01T23:59:59.000Z

    Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

  14. InGaAsInP double heterostructures on InPSi templates fabricated by wafer bonding and hydrogen-induced exfoliation

    E-Print Network [OSTI]

    Atwater, Harry

    . Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 23 January 2003; accepted 3

  15. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect (OSTI)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01T23:59:59.000Z

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  16. Particulate contamination removal from wafers using plasmas and mechanical agitation

    DOE Patents [OSTI]

    Selwyn, G.S.

    1998-12-15T23:59:59.000Z

    Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

  17. Wafer characteristics via reflectometry

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    2010-10-19T23:59:59.000Z

    Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

  18. Stable wafer-carrier system

    DOE Patents [OSTI]

    Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

    2013-10-22T23:59:59.000Z

    One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

  19. Bonded semiconductor substrate

    DOE Patents [OSTI]

    Atwater, Jr.; Harry A. (South Pasadena, CA), Zahler; James M. (Pasadena, CA)

    2010-07-13T23:59:59.000Z

    Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

  20. Wafer screening device and methods for wafer screening

    DOE Patents [OSTI]

    Sopori, Bhushan; Rupnowski, Przemyslaw

    2014-07-15T23:59:59.000Z

    Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

  1. Particulate contamination removal from wafers using plasmas and mechanical agitation

    DOE Patents [OSTI]

    Selwyn, Gary S. (Los Alamos, NM)

    1998-01-01T23:59:59.000Z

    Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates.

  2. Silicon cast wafer recrystallization for photovoltaic applications

    E-Print Network [OSTI]

    Hantsoo, Eerik T. (Eerik Torm)

    2008-01-01T23:59:59.000Z

    Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

  3. Wafer Fusion for Integration of Semiconductor Materials and Devices

    SciTech Connect (OSTI)

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

    1999-05-01T23:59:59.000Z

    We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

  4. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01T23:59:59.000Z

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  5. Wafer characteristics via reflectometry and wafer processing apparatus and method

    SciTech Connect (OSTI)

    Sopori, Bhushan L. (Denver, CO)

    2007-07-03T23:59:59.000Z

    An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.

  6. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, S.R.

    1999-07-27T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  7. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, Steven R. (Berkeley, CA)

    1999-01-01T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  8. NREL Core Program; Session: Wafer Silicon (Presentation)

    SciTech Connect (OSTI)

    Wang, Q.

    2008-04-01T23:59:59.000Z

    This project supports the Solar America Initiative by working on: (1) wafer Si accounts for 92% world-wide solar cell production; (2) research to fill the industry R and D pipeline for the issues in wafer Si; (3) development of industry collaborative research; (4) improvement of NREL tools and capabilities; and (5) strengthen US wafer Si research.

  9. Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures

    E-Print Network [OSTI]

    Comeaux, Justin

    2014-08-07T23:59:59.000Z

    The wafer test cavity, designed at Texas A&M University, has been constructed and tested at Thomas Jefferson National Accelerator Facility. The mode structure, quality factor and coupling methods have been investigated. The TE_(011) mode has been...

  10. Three dimensional integration technology using copper wafer bonding

    E-Print Network [OSTI]

    Fan, Andy, 1976-

    2006-01-01T23:59:59.000Z

    With 3-D integration, the added vertical component could theoretically increase the device density per footprint ratio of a given chip by n-fold, provide a means of heterogeneous integration of devices fabricated from ...

  11. Copper wafer bonding in three-dimensional integration

    E-Print Network [OSTI]

    Chen, Kuan-Neng, 1974-

    2005-01-01T23:59:59.000Z

    Three-dimensional (3D) integration, in which multiple layers of devices are stacked with high density of interconnects between the layers, offers solutions for problems when the critical dimensions in integrated circuits ...

  12. Wafer scale micromachine assembly method

    DOE Patents [OSTI]

    Christenson, Todd R. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A method for fusing together, using diffusion bonding, micromachine subassemblies which are separately fabricated is described. A first and second micromachine subassembly are fabricated on a first and second substrate, respectively. The substrates are positioned so that the upper surfaces of the two micromachine subassemblies face each other and are aligned so that the desired assembly results from their fusion. The upper surfaces are then brought into contact, and the assembly is subjected to conditions suited to the desired diffusion bonding.

  13. Methane production using resin-wafer electrodeionization

    DOE Patents [OSTI]

    Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

    2014-03-25T23:59:59.000Z

    The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

  14. Porous solid ion exchange wafer for immobilizing biomolecules

    DOE Patents [OSTI]

    Arora, Michelle B. (Woodridge, IL); Hestekin, Jamie A. (Morton Grove, IL); Lin, YuPo J. (Naperville, IL); St. Martin, Edward J. (Libertyville, IL); Snyder, Seth W. (Lincolnwood, IL)

    2007-12-11T23:59:59.000Z

    A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

  15. Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics

    SciTech Connect (OSTI)

    None

    2010-01-15T23:59:59.000Z

    Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

  16. Wafer-fused semiconductor radiation detector

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  17. Geometry control of recrystallized silicon wafers for solar applications

    E-Print Network [OSTI]

    Ruggiero, Christopher W

    2009-01-01T23:59:59.000Z

    The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

  18. Methanol Steam Reformer on a Silicon Wafer

    SciTech Connect (OSTI)

    Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

    2004-04-15T23:59:59.000Z

    A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

  19. Optical cavity furnace for semiconductor wafer processing

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2014-08-05T23:59:59.000Z

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  20. Mask-to-wafer alignment system

    DOE Patents [OSTI]

    Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

    2003-11-04T23:59:59.000Z

    A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

  1. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics

    SciTech Connect (OSTI)

    Lorenz, Adam [1366 Technologies] [1366 Technologies

    2013-08-30T23:59:59.000Z

    The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the developments made under this program have increased 1366 confidence that Direct Wafers can be produced for ~$0.10/W, still nearly 50% lower than current industry best practice. Wafer quality also steadily improved throughout the program, both in electrical performance and geometry. The improvements to electrical performance were achieved through a combination of optimized heat transfer during growth, reduction of metallic impurities to below 10 ppbw total metals, and lowering oxygen content to below 2e17 atoms/cc. Wafer average thickness has been reduced below 200µm with standard deviation less than 20µm. Measurement of spatially varying thickness shortly after wafer growth is being used to continually improve uniformity by adjusting thermal conditions. At the conclusion of the program, 1366 has developed strong relationships with four leading Tier1 cell manufactures and several have demonstrated 17% cell efficiency on Direct Wafer. Sample volumes were limited, with the largest trial consisting of 300 Direct Wafers, and there remains strong pull for larger quantities necessary for qualification before sales contracts can be signed. This will be the focus of our pilot manufacturing scale up in 2014.

  2. asic wafer test: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    asic wafer test First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Testing specification for the wafer...

  3. Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

    E-Print Network [OSTI]

    ), Canberra, ACT 0200, Australia 2 State Key Laboratory of PV Science & Technology, Trina Solar Energy Limited in multicrystalline or so-called "cast monocrystalline" wafers. VC 2012 American Institute of Physics. [http it is convenient to texture monocrystalline silicon wafers with a (100) surface orientation through alkaline etch

  4. The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells

    E-Print Network [OSTI]

    Yeung, King Wah Sunny

    2012-01-01T23:59:59.000Z

    Efficiency of p?n Junction Solar Cells, J. Appl. Phys. 32,Inverted Triple- Junction Solar Cell with Two Independentlyof Thin-Film GaAs Solar Cells on Si Substrates, J. Appl.

  5. Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bonded Arrays: The Power of Multiple Hydrogen Bonds. Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds. Abstract: Hydrogen bond interactions in small covalent model...

  6. Investing in Bonds

    E-Print Network [OSTI]

    Johnson, Jason; Polk, Wade

    2002-08-12T23:59:59.000Z

    Bonds, which are issued by governments and corporations, can be an important part of one's investment portfolio. U.S. government bonds, municipal bonds, zero-coupon bonds and other types are described. Also learn strategies for coping with inflation...

  7. Optima XE Single Wafer High Energy Ion Implanter

    SciTech Connect (OSTI)

    Satoh, Shu; Ferrara, Joseph; Bell, Edward; Patel, Shital; Sieradzki, Manny [Axcelis Technologies, Inc. 108 Cherry Hill Drive, Beverly, MA 01915 (United States)

    2008-11-03T23:59:59.000Z

    The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowing the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.

  8. Electrochemical method for defect delineation in silicon-on-insulator wafers

    DOE Patents [OSTI]

    Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

  9. Process and apparatus for casting multiple silicon wafer articles

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA)

    1992-05-05T23:59:59.000Z

    Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

  10. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening a solidSynthesisAppliancesTrending: Metal Oxo Bonds Print Metal

  11. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening a solidSynthesisAppliancesTrending: Metal Oxo Bonds Print

  12. Pauling bond strength, bond length and electron density distribution...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Pauling bond strength, bond length and electron density distribution. Pauling bond strength, bond length and electron density distribution. Abstract: A power law regression...

  13. Surety Bond Program (Maryland)

    Broader source: Energy.gov [DOE]

    The Surety Bond Program, a program of the Maryland Small Business Development Financing Authority, assists eligible small businesses in obtaining bid, performance or payment bonds necessary to...

  14. Bond Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Site MapSolar energy(cousin -in-law

  15. Wafer heating mechanisms in a molecular gas, inductively coupled plasma: in situ, real time wafer surface measurements and three-dimensional thermal modeling

    SciTech Connect (OSTI)

    Titus, M. J.; Graves, D. B. [Department of Chemical Engineering, University of California, Berkeley, California 94720 (United States)

    2008-09-15T23:59:59.000Z

    The authors report measurements and modeling of wafer heating mechanisms in an Ar/O{sub 2} inductively coupled plasma (ICP). The authors employed a commercially available on-wafer sensor system (PlasmaTemp developed by KLA-Tencor) consisting of an on-board electronics module housing battery power and data storage with 30 temperature sensors embedded onto the wafer at different radial positions. This system allows for real time, in situ wafer temperature measurements. Wafer heating mechanisms were investigated by combining temperature measurements from the PlasmaTemp sensor wafer with a three-dimensional heat transfer model of the wafer and a model of the ICP. Comparisons between pure Ar and Ar/O{sub 2} discharges demonstrated that two additional wafer heating mechanisms can be important in molecular gas plasmas compared to atomic gas discharges. The two mechanisms are heating from the gas phase and O-atom surface recombination. These mechanisms were shown to contribute as much as 60% to wafer heating under conditions of low bias power. This study demonstrated how the 'on-wafer' temperature sensor not only yields a temperature profile distribution across the wafer, but can be used to help determine plasma characteristics, such as ion flux profiles or plasma processing temperatures.

  16. Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

    SciTech Connect (OSTI)

    Fong, Theodore E.

    2013-05-06T23:59:59.000Z

    The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technology further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.

  17. Municipal Bond - Power Purchase Agreement Model Continues to...

    Broader source: Energy.gov (indexed) [DOE]

    for power purchase agreement model to provide low-cost solar energy. Author: National Renewable Energy Laboratory Municipal Bond - Power Purchase Agreement Model Continues to...

  18. Qualified Energy Conservation Bond (QECB) Update: New Guidance...

    Broader source: Energy.gov (indexed) [DOE]

    Lawrence Berkeley National Laboratory Qualified Energy Conservation Bond (QECB) Update: New Guidance from the U.S. Department of Treasury and the Internal Revenue Service...

  19. PREDICTIVE SIMULATION OF PIEZOELECTRIC WAFER ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    1 PREDICTIVE SIMULATION OF PIEZOELECTRIC WAFER ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING: structural health monitoring (SHM), piezoelectric wafer active sensors (PWAS), nondestructive evaluation (NDE sensors (PWAS) are lightweight and inexpensive enablers for structural health monitoring (SHM). After

  20. (110) Oriented silicon wafer latch accelerometer and process for forming the same

    DOE Patents [OSTI]

    Ciarlo, Dino R. (Livermore, CA)

    1990-01-01T23:59:59.000Z

    A method for etching a (110) silicon wafer to produce latching cantilever beams, which bend parallel to the surface of the wafer. The resulting apparatus is also part of the invention.

  1. Embedded NDE with Piezoelectric Wafer Active Sensors in Aerospace Applications

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    The capability of embedded piezoelectric wafer active sensors (PWAS) to perform in-situ nondestructive evaluation structural radar (EUSR). For quality assurance, PWAS are self-tested with the electromechanical impedance S s T d E D d T E = + = + (1) where E ijkls is the mechanical compliance of the material measured at zero

  2. Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas

    E-Print Network [OSTI]

    Kushner, Mark

    Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas Natalia Y of capacitively coupled plasma reactors with a wafer-focus ring gap. The penetration of plasma generated species i.e., ions and radicals into the wafer-focus ring gap is discussed. We found that the penetration of plasma

  3. Bond Financing (New Jersey)

    Broader source: Energy.gov [DOE]

    Bond financing is available to eligible businesses through the New Jersey Economic Development Authority, in the amount of $500,000 to $10 million. The bonds can be used to finance capital...

  4. Essays on corporate bonds

    E-Print Network [OSTI]

    Bao, Jack (Jack C.)

    2009-01-01T23:59:59.000Z

    This thesis consists of three empirical essays on corporate bonds, examining the role of both credit risk and liquidity. In the first chapter, I test the ability of structural models of default to price corporate bonds in ...

  5. Local Government Revenue Bonds (Montana)

    Broader source: Energy.gov [DOE]

    Limited obligation local government bonds ("special revenue bonds") may be issued for qualified electric energy generation facilities, including those powered by renewables. These bonds generally...

  6. Bonding thermoplastic polymers

    DOE Patents [OSTI]

    Wallow, Thomas I. (Fremont, CA); Hunter, Marion C. (Livermore, CA); Krafcik, Karen Lee (Livermore, CA); Morales, Alfredo M. (Livermore, CA); Simmons, Blake A. (San Francisco, CA); Domeier, Linda A. (Danville, CA)

    2008-06-24T23:59:59.000Z

    We demonstrate a new method for joining patterned thermoplastic parts into layered structures. The method takes advantage of case-II permeant diffusion to generate dimensionally controlled, activated bonding layers at the surfaces being joined. It is capable of producing bonds characterized by cohesive failure while preserving the fidelity of patterned features in the bonding surfaces. This approach is uniquely suited to production of microfluidic multilayer structures, as it allows the bond-forming interface between plastic parts to be precisely manipulated at micrometer length scales. The bond enhancing procedure is easily integrated in standard process flows and requires no specialized equipment.

  7. Private Activity Revenue Bonds (Maryland)

    Broader source: Energy.gov [DOE]

    Private Activity Revenue Bonds are available in the form of both taxable bonds and tax-exempt bonds. Both types of bonds provide access to long-term capital markets for fixed asset financing....

  8. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing...

  9. Laser removal of Aluminum links for applications in wafer scale integrated circuits 

    E-Print Network [OSTI]

    Parikh, Harshavadan B.

    1987-01-01T23:59:59.000Z

    the operating data for each link processing This software would be tried on numerous wafers with test structures to establish operating laser power levels for Aluminum links. With the selected laser power levels, links on a test wafer would be processed. Then... LASER REMOVAL OF ALUMINUM LINKS FOR APPLICATIONS IN WAFER SCALE INTEGRATED CIRCUITS A Thesis by HARSHAVADAN B. PARIKH Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree...

  10. Sandia National Laboratories: Diffusion Bonding Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory (NESL) Transient Nuclear Fuels Testing Radiation Effects Sciences Solar Electric Propulsion Nuclear Energy Safety Technologies Experimental Testing...

  11. Propagation of Nd-laser pulses through crystalline silicon wafers

    SciTech Connect (OSTI)

    Kirichenko, N A; Kuzmin, P G; Shcherbina, M E [Wave Research Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2011-07-31T23:59:59.000Z

    Propagation of pulses from an Nd:YAG laser (wavelength, 1.064 {mu}m; pulse duration, 270 ns; pulse energy, 225 {mu}J) through crystalline silicon wafers is studied experimentally. Mathematical modelling of the process is performed: the heat conduction equation is solved numerically, the temperature dependences of the absorption and refraction of a substance, as well as generation of nonequilibrium carriers by radiation are taken into account. The constructed model satisfactorily explains the experimentally observed intensity oscillations of transmitted radiation. (interaction of laser radiation with matter)

  12. Bond Financing Program (New Hampshire)

    Broader source: Energy.gov [DOE]

    BFA’s Bond Financing Program offers tax-exempt and taxable bonds for fixed-asset expansion projects. Industrial development revenue bonds can be used by manufacturers for the acquisition,...

  13. Low Temperature Material Bonding Technique

    DOE Patents [OSTI]

    Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

    2000-10-10T23:59:59.000Z

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  14. Low temperature material bonding technique

    DOE Patents [OSTI]

    Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

    2002-02-12T23:59:59.000Z

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  15. Structural health monitoring with piezoelectric wafer active sensors predictive modeling and simulation

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Structural health monitoring with piezoelectric wafer active sensors ­ predictive modeling of the state of the art in structural health monitoring with piezoelectric wafer active sensors and follows with conclusions and suggestions for further work Key Words: structural health monitoring, SHM, nondestructive

  16. Modeling of Power and Energy Transduction of Embedded Piezoelectric Wafer Active Sensors for Structural Health Monitoring

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    chart show the trends in the power and energy flow behavior with remarkable peaks and valleys that can1 Modeling of Power and Energy Transduction of Embedded Piezoelectric Wafer Active Sensors a systematic investigation of power and energy transduction in piezoelectric wafer active sensors (PWAS

  17. Numerical Simulation of a Single-Wafer Isothermal Plasma Etching Reactor

    E-Print Network [OSTI]

    Economou, Demetre J.

    Numerical Simulation of a Single-Wafer Isothermal Plasma Etching Reactor Sang-Kyu Parkand Demetre J-plate single- wafer isothermal reactor was conducted. The oxygen plasma etching of polymer under high pressure with emphasis on chemical etching. Etching rate and uniformity were examined as a function of reactor geometry

  18. Bonding aerogels with polyurethanes

    SciTech Connect (OSTI)

    Matthews, F.M.; Hoffman, D.M.

    1989-11-01T23:59:59.000Z

    Aerogels, porous silica glasses with ultra-fine cell size (30nm), are made by a solution gelation (sol-gel) process. The resulting gel is critical point dried to densities from 0.15--0.60 g/cc. This material is machinable, homogeneous, transparent, coatable and bondable. To bond aerogel an adhesive should have long cure time, no attack on the aerogel structure, and high strength. Several epoxies and urethanes were examined to determine if they satisfied these conditions. Bond strengths above 13 psi were found with double bubble and DP-110 epoxies and XI-208/ODA-1000 and Castall U-2630 urethanes. Hardman Kalex Tough Stuff'' A-85 hardness urethane gave 18 psi bond strength. Hardman A-85, Tuff-Stuff'' was selected for further evaluation because it produced bond strengths comparable to the adherend cohesive strength. 5 refs., 2 figs.

  19. The New Chemical Bond

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    off when the first convincing experimental evidence of the phi bond showed up for the thorium sandwich complex, as revealed by its elaborate, never-before-seen symmetry. The...

  20. Characterization of anodic bonding

    E-Print Network [OSTI]

    Tudryn, Carissa Debra, 1978-

    2004-01-01T23:59:59.000Z

    Anodic bonding is a common process used in MicroElectroMechanical Systems (MEMS) device fabrication and packaging. Polycrystalline chemical vapor deposited (CVD) silicon carbide (SiC) is emerging as a new MEMS device and ...

  1. Water's Hydrogen Bond Strength

    E-Print Network [OSTI]

    Martin Chaplin

    2007-06-10T23:59:59.000Z

    Water is necessary both for the evolution of life and its continuance. It possesses particular properties that cannot be found in other materials and that are required for life-giving processes. These properties are brought about by the hydrogen bonded environment particularly evident in liquid water. Each liquid water molecule is involved in about four hydrogen bonds with strengths considerably less than covalent bonds but considerably greater than the natural thermal energy. These hydrogen bonds are roughly tetrahedrally arranged such that when strongly formed the local clustering expands, decreasing the density. Such low density structuring naturally occurs at low and supercooled temperatures and gives rise to many physical and chemical properties that evidence the particular uniqueness of liquid water. If aqueous hydrogen bonds were actually somewhat stronger then water would behave similar to a glass, whereas if they were weaker then water would be a gas and only exist as a liquid at sub-zero temperatures. The overall conclusion of this investigation is that water's hydrogen bond strength is poised centrally within a narrow window of its suitability for life.

  2. Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010

    SciTech Connect (OSTI)

    Lorenz, A.

    2011-06-01T23:59:59.000Z

    1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

  3. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  4. Development of a fixed abrasive slicing technique (FAST) for reducing the cost of photovoltaic wafers

    SciTech Connect (OSTI)

    Schmid, F. (Crystal Systems, Inc., Salem, MA (United States))

    1991-12-01T23:59:59.000Z

    This report examines a wafer slicing technique developed by Crystal Systems, Inc. that reduces the cost of photovoltaic wafers. This fixed, abrasive slicing technique (FAST) uses a multiwire bladepack and a diamond-plated wirepack; water is the coolant. FAST is in the prototype production stage and reduces expendable material costs while retaining the advantages of a multiwire slurry technique. The cost analysis revealed that costs can be decreased by making more cuts per bladepack and slicing more wafers per linear inch. Researchers studied the degradation of bladepacks and increased wirepack life. 21 refs.

  5. Space Application of Piezoelectric Wafer Active Sensors for Structural Health Monitoring**

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Space Application of Piezoelectric Wafer Active Sensors for Structural Health Monitoring** V class of structural health monitoring (SHM) applications. This paper presents and discusses with conclusions and suggestions for further work. Key Words: structural health monitoring, piezoelectric, sensors

  6. Finite Element Simulation of Piezoelectric Wafer Active Sensors for Structural Health Monitoring with Coupled-Filed

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Finite Element Simulation of Piezoelectric Wafer Active Sensors for Structural Health Monitoring) is emerging as an effective and powerful technique in structural health monitoring (SHM). Modeling to analytical calculation and experimental data. Key words: Structural Health Monitoring, PWAS, finite element

  7. Structural Health Monitoring with Piezoelectric Wafer Active Sensors for Space Applications

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Structural Health Monitoring with Piezoelectric Wafer Active Sensors for Space Applications Adrian detection and structural health monitoring. Where appropriate, comparison between different methods-coupling coefficient I. Introduction STRUCTURAL health monitoring (SHM) is an emerging research area with multiple

  8. On-wafer seamless integration of GaN and Si (100) electronics

    E-Print Network [OSTI]

    Chung, Jinwook

    The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at ...

  9. Standardizing and improving test wafer processes : inventory optimization and a days of inventory pull system

    E-Print Network [OSTI]

    Johnson, David W. (David William), S.M. Massachusetts Institute of Technology

    2009-01-01T23:59:59.000Z

    Over the past few years, the Intel Fab-17 facility has aggressively pursued lean methodology to reduce the manufacturing costs associated with its aging 200mm diameter wafer process. One area ripe with improvement opportunities ...

  10. A MICRO STENCILING PROCESS FOR WAFER SCALE METALLIZATION OF PLASTIC SUBSTRATES

    E-Print Network [OSTI]

    by the electronics packaging industry. These types of stencils are made using chemical etching or laser cutting for patterning applications with the first type being constructed by drilling a 100 µm hole in a silicon wafer [1

  11. Active carbon filter health condition detection with piezoelectric wafer active sensors

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Active carbon filter health condition detection with piezoelectric wafer active sensors Jingjing Chemical Biological Center, 5183 Blackhawk Road, APG, MD USA 21010 ABSTRACT The impregnated active carbon in active carbon filters by combining the electromechanical impedance spectroscopy (EMIS

  12. In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing

    E-Print Network [OSTI]

    Vedantham, Vikram

    2004-11-15T23:59:59.000Z

    characteristics of the wafer. The Gabor wavelet transform allows the wave dispersion to be unraveled and the group velocity of individual frequency components to be extracted from the experimentally acquired time waveform. The thesis illustrates the formulation...

  13. Cryogenic Probe Station for On-Wafer Characterization of Electrical Devices Damon Russell,1, a)

    E-Print Network [OSTI]

    Weinreb, Sander

    the design, and allowing au- tomated step and repeat testing. The system can characterize wafers up to 100 mm) Millimeter wave head, (6) Vector network analyzer (VNA), and (7) Stepper motor, heater, and temperature

  14. Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 C

    E-Print Network [OSTI]

    Howlader, Matiar R

    such as the fuel combustion chamber of automotive vehicles (i.e., 450 °C) [11] and the emerging micro gas turbine

  15. Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding GeSi1xGex Si

    E-Print Network [OSTI]

    Gex ŐSi Virtual Substrates Arthur J. Pitera,z G. Taraschi, M. L. Lee, C. W. Leitz,* Z.-Y. Cheng, and E. A

  16. RELAXED SIGE ON INSULATOR FABRICATED VIA WAFER BONDING AND LAYER TRANSFER: ETCH-BACK AND SMART-CUT ALTERNATIVES

    E-Print Network [OSTI]

    Engineering and Computer Science Massachusetts Institute of Technology Cambridge, MA 02139 SiGe on Insulator (SiGeOI) is an improved substrate for MOS devices since it combines both the benefits of an insulating substrate with those of a SiGe device layer. The fabrication process begins with the UHV-CVD growth of a SiGe

  17. Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom

    DOE Patents [OSTI]

    Lin, YuPo J. (Naperville, IL); Henry, Michael P. (Batavia, IL); Snyder, Seth W. (Lincolnwood, IL)

    2008-11-18T23:59:59.000Z

    An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

  18. Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom

    DOE Patents [OSTI]

    Lin, YuPo J. (Naperville, IL); Henry, Michael P. (Batavia, IL); Snyder, Seth W. (Lincolnwood, IL)

    2011-07-12T23:59:59.000Z

    An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

  19. Economic Development Bond Program (Iowa)

    Broader source: Energy.gov [DOE]

    Through its Economic Development Bond Program, the Iowa Finance Authority (IFA) issues tax-exempt bonds on behalf of private entities or organizations for eligible purposes. The responsibility for...

  20. Private Activity Bond Allocation (Missouri)

    Broader source: Energy.gov [DOE]

    The Private Activity Bond Allocation Program provides low-interest financing through tax-exempt bonds for certain types of projects, including electric and gas utility projects. Eligible applicants...

  1. Pauling bond strength, bond length and electron density distribution

    SciTech Connect (OSTI)

    Gibbs, Gerald V.; Ross, Nancy L.; Cox, David F.; Rosso, Kevin M.; Iversen, Bo B.; Spackman, M. A.

    2014-01-18T23:59:59.000Z

    A power law regression equation, = 1.46(/r)-0.19, connecting the average experimental bond lengths, , with the average accumulation of the electron density at the bond critical point, , between bonded metal M and oxygen atoms, determined at ambient conditions for oxide crystals, where r is the row number of the M atom, is similar to the regression equation R(M-O) = 1.39(?(rc)/r)-0.21 determined for three perovskite crystals for pressures as high as 80 GPa. The two equations are also comparable with those, = 1.43(/r)-0.21, determined for a large number of oxide crystals at ambient conditions and = 1.39(/r)-0.22, determined for geometry optimized hydroxyacid molecules, that connect the bond lengths to the average Pauling electrostatic bond strength, , for the M-O bonded interactions. On the basis of the correspondence between the two sets of equations connecting ?(rc) and the Pauling bond strength s with bond length, it appears that Pauling’s simple definition of bond strength closely mimics the accumulation of the electron density between bonded pairs of atoms. The similarity of the expressions for the crystals and molecules is compelling evidence that the M-O bonded interactions for the crystals and molecules 2 containing the same bonded interactions are comparable. Similar expressions, connecting bond lengths and bond strength, have also been found to hold for fluoride, nitride and sulfide molecules and crystals. The Brown-Shannon bond valence, ?, power law expression ? = [R1/(R(M-O)]N that has found wide use in crystal chemistry, is shown to be connected to a more universal expression determined for oxides and the perovskites, = r[(1.41)/]4.76, demonstrating that the bond valence for a bonded interaction is likewise closely connected to the accumulation of the electron density between the bonded atoms. Unlike the Brown-Shannon expression, it is universal in that it holds for the M-O bonded interactions for a relatively wide range of M atoms of the periodic table. The power law equation determined for the oxide crystals at ambient conditions is similar to the power law expression = r[1.46/]5.26 determined for the perovskites at pressures as high as 80 GPa, indicating that the intrinsic connection between R(M-O) and ?(rc) that holds at ambient conditions also holds, to a first approximation, at high pressures.

  2. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    SciTech Connect (OSTI)

    Emanuel Sachs

    2013-01-16T23:59:59.000Z

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

  3. Solder extrusion pressure bonding process and bonded products produced thereby

    DOE Patents [OSTI]

    Beavis, Leonard C. (Albuquerque, NM); Karnowsky, Maurice M. (Albuquerque, NM); Yost, Frederick G. (Ceder Crest, NM)

    1992-01-01T23:59:59.000Z

    Production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about -40.degree. C. and 110.degree. C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

  4. Solder extrusion pressure bonding process and bonded products produced thereby

    DOE Patents [OSTI]

    Beavis, L.C.; Karnowsky, M.M.; Yost, F.G.

    1992-06-16T23:59:59.000Z

    Disclosed is a process for production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about [minus]40 C and 110 C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

  5. Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room temperature

    E-Print Network [OSTI]

    Howlader, Matiar R

    ], spark welding [3], explosive bonding [4], and diffusion bonding [5,6]. However, the processing such as diffusion bonding [5,6], friction welding [7e11], vacuum roll bonding [12] and hot roll bonding [13Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room

  6. Qualified Energy Conservation Bonds (Ohio)

    Broader source: Energy.gov [DOE]

    The Ohio Air Quality Development Authority (OAQDA) administers the Qualified Energy Conservation Bonds (QECB) program in Ohio. QECBs have been used by local governments and public universities to...

  7. Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

    SciTech Connect (OSTI)

    Choi, Sungho [Graduate School of Mechanical Engineering, Hanyang University, Seoul 133–791 (Korea, Republic of); Jhang, Kyung-Young, E-mail: kyjhang@hanyang.ac.kr [School of Mechanical Engineering, Hanyang University, Seoul 133–791 (Korea, Republic of)

    2014-06-23T23:59:59.000Z

    We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.

  8. Laser removal of Aluminum links for applications in wafer scale integrated circuits

    E-Print Network [OSTI]

    Parikh, Harshavadan B.

    1987-01-01T23:59:59.000Z

    with different link width ranging from 2 to 4 microns while the distance between links ranges from 2. 5 to 6 microns. The laser power is selected in such a way that the complete range of link removal is investigated, i. e. , from no successful link removal... to decide link size. 5. Link Spacing After the laser link width is decided, the next point to be considered is how closely two links can be laid out on wafer and what is the safe distance between the link and any other conducting material on the wafer...

  9. Study on higher harmonic suppression using edge filter and polished Si wafer

    SciTech Connect (OSTI)

    Gupta, R. K., E-mail: rkg@rrcat.gov.in; Singh, Amol, E-mail: rkg@rrcat.gov.in; Modi, Mohammed H., E-mail: rkg@rrcat.gov.in; Lodha, G. S., E-mail: rkg@rrcat.gov.in [X-ray Optics Section, ISU Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2014-04-24T23:59:59.000Z

    Higher harmonics contamination is a severe problem in synchrotron beamlines where grating monochromators are used. In these beamlines, absorption edge filters and critical angle mirrors are used to suppress the harmonic contaminations. In the present study, carried out using Indus-1 reflectivity beamline, a harmonic suppression characteristic of Al edge filter and polished silicon wafer are determined. It is found that the Al filter suppresses higher harmonics in 2–7% range whereas the polished silicon wafer can suppress the higher harmonics below 1%. The results of comparative study are discussed.

  10. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution AndControllingCoolCorrectiveCostsXCovalent Bonding in

  11. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution AndControllingCoolCorrectiveCostsXCovalent Bonding

  12. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 3, AUGUST 2001 255 Autonomous On-Wafer Sensors for Process

    E-Print Network [OSTI]

    California at Berkeley, University of

    for such a sensor wafer, including equipment characterization and design, process calibration, and equipment qualification and diag- nosis. In this paper, various sensor architectures, power supplies, communications metrology to in-line metrology. Wafer measurement equipment has been moved, where possible, from stand

  13. Sandia starts silicon wafer production for three nuclear weapon programs |

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14 FEDERALAmerica HighSTART Signedhosts annualNational Nuclear

  14. Thermal Modeling of A Friction Bonding Process

    SciTech Connect (OSTI)

    John Dixon; Douglas Burkes; Pavel Medvedev

    2007-10-01T23:59:59.000Z

    A COMSOL model capable of predicting temperature evolution during nuclear fuel fabrication is being developed at the Idaho National Laboratory (INL). Fuel plates are fabricated by friction bonding (FB) uranium-molybdenum (U-Mo) alloy foils positioned between two aluminum plates. The ability to predict temperature distribution during fabrication is imperative to ensure good quality bonding without inducing an undesirable chemical reaction between U-Mo and aluminum. A three-dimensional heat transfer model of the FB process implementing shallow pin penetration for cladding monolithic nuclear fuel foils is presented. Temperature distribution during the FB process as a function of fabrication parameters such as weld speed, tool load, and tool rotational frequency are predicted. Model assumptions, settings, and equations are described in relation to standard friction stir welding. Current experimental design for validation and calibration of the model is also demonstrated. Resulting experimental data reveal the accuracy in describing asymmetrical temperature distributions about the tool face. Temperature of the bonded plate drops beneath the pin and is higher on the advancing side than the retreating side of the tool.

  15. Quantum Confinement in Hydrogen Bond

    E-Print Network [OSTI]

    Santos, Carlos da Silva dos; Ricotta, Regina Maria

    2015-01-01T23:59:59.000Z

    In this work, the quantum confinement effect is proposed as the cause of the displacement of the vibrational spectrum of molecular groups that involve hydrogen bonds. In this approach the hydrogen bond imposes a space barrier to hydrogen and constrains its oscillatory motion. We studied the vibrational transitions through the Morse potential, for the NH and OH molecular groups inside macromolecules in situation of confinement (when hydrogen bonding is formed) and non-confinement (when there is no hydrogen bonding). The energies were obtained through the variational method with the trial wave functions obtained from Supersymmetric Quantum Mechanics (SQM) formalism. The results indicate that it is possible to distinguish the emission peaks related to the existence of the hydrogen bonds. These analytical results were satisfactorily compared with experimental results obtained from infrared spectroscopy.

  16. Cross-sectional TEM Observations of Si Wafers Irradiated With Gas Cluster Ion Beams

    SciTech Connect (OSTI)

    Isogai, Hiromichi; Toyoda, Eiji; Senda, Takeshi; Izunome, Koji [Processing Technology, Silicon Business Group, TOSHIBA CERAMICS CO., LTD. 6-861-5 Higashikou, Seiroumachi Kitakanbaragun, Niigata (Japan); Kashima, Kazuhiko [New Buisness Creation, TOSHIBA CERAMICS CO., LTD. 30 Soya, Hadano City, Kanagawa (Japan); Toyoda, Noriaki; Yamada, Isao [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigori, Hyogo (Japan)

    2006-11-13T23:59:59.000Z

    Irradiation by a Gas Cluster Ion Beam (GCIB) is a promising technique for precise surface etching and planarization of Si wafers. However, it is very important to understand the crystalline structure of Si wafers after GCIB irradiation. In this study, the near surface structure of a Si (100) wafer was analyzed after GCIB irradiation, using a cross-sectional transmission electron microscope (XTEM). Ar-GCIB, that physically sputters Si atoms, and SF6-GCIB, that chemically etches the Si surface, were both used. After GCIB irradiation, high temperature annealing was performed in a hydrogen atmosphere. From XTEM observations, the surface of a virgin Si wafer exhibited completely crystalline structures, but the existence of an amorphous Si and a transition layer was confirmed after GCIB irradiation. The thickness of amorphous layer was about 30 nm after Ar-GCIB irradiation at 30 keV. However, a very thin (< 5 nm) layer was observed when 30 keV SF6-GCIB was used. The thickness of the transition layer was the same both Ar and SF6-GCIB irradiation. After annealing, the amorphous Si and transition layers had disappeared, and a complete crystalline structure with an atomically smooth surface was observed.

  17. Tuned Lamb Wave Excitation and Detection with Piezoelectric Wafer Active Sensors for Structural Health Monitoring

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    and detect tuned Lamb waves for structural health monitoring is explored. First, a brief review of Lamb waves mode Lamb waves is demonstrated as an effective structural health monitoring method. Key Words: structural health monitoring, Lamb waves, piezoelectric wafer active sensors, aging aircraft, cracks, damage

  18. Signal Acquisition/Conditioning for Automated Data Collection during Structural Health Monitoring with Piezoelectric Wafer

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    1 Signal Acquisition/Conditioning for Automated Data Collection during Structural Health Monitoring sensors (PWAS) is emerging as an effective and powerful technique for structural health monitoring (SHM words: Structural health monitoring, piezoelectric wafer active sensors, pitch-catch, pulse-echo, phased

  19. Piezoelectric Wafer Embedded Active Sensors for Aging Aircraft Structural Health Monitoring

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    41 Piezoelectric Wafer Embedded Active Sensors for Aging Aircraft Structural Health Monitoring ends with a conceptual design of a structural health monitoring system and suggestions for aging damage detection Á structural health monitoring Á failure prevention Á ultrasonics Á pulse-echo Á emitter

  20. MULTIFUNCTIONAL VEHICLE STRUCTURAL HEALTH MONITORING OPPORTUNITIES WITH PIEZOELECTRIC WAFER ACTIVE SENSORS

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    MULTIFUNCTIONAL VEHICLE STRUCTURAL HEALTH MONITORING OPPORTUNITIES WITH PIEZOELECTRIC WAFER ACTIVE and the research needs are also discussed. INTRODUCTION Structural Health Monitoring is a major component of the remaining structural life. For the health monitoring of an actual structure, networks of embedded active

  1. On the Modeling of Piezoelectric Wafer Active Sensor Impedance Analysis for Structural Health Monitoring

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    damage assessment, and are considered as a new non-destructive evaluation method. The in-situ impedance of experimental results obtained from previous work. The real part of the measured PWAS impedance presents twoOn the Modeling of Piezoelectric Wafer Active Sensor Impedance Analysis for Structural Health

  2. Damage Identification in Aging Aircraft Structures with Piezoelectric Wafer Active Sensors

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Damage Identification in Aging Aircraft Structures with Piezoelectric Wafer Active Sensors VICTOR of structural damage such as fatigue cracks and corrosion. Two main detection strategies are considered: (a) the wave propagation method for far-field damage detection; and (b) the electro-mechanical (E/M) impedance

  3. Damage Identification in Aging Aircraft Structures with Piezoelectric Wafer Active Sensors

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Damage Identification in Aging Aircraft Structures with Piezoelectric Wafer Active Sensors VICTOR the onset and progress of structural damage such as fatigue cracks and corrosion. Two main detection strategies are considered: (a) the wave propagation method for far-field damage detection; and (b

  4. Title: Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Authors: Dustin T. Thomas

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    0 Title: Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Authors: Dustin T structural problems is corrosion. In fact the KC-135 now costs $1.2 billion a year to repair corrosion) in a pitch-catch configuration. The sensors were placed on a grid pattern. Material loss through corrosion

  5. Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Dustin Thomas, John Welter

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    1 Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Dustin Thomas, John Welter Air a priority issue for today's Air Force. One of the most critical structural problems is corrosion. In fact the KC-135 now costs $1.2 billion a year to repair corrosion. In this paper, we plan to show the use

  6. LUMINESCENCE IMAGING VERSUS LOCK-IN THERMOGRAPHY ON SOLAR CELLS AND WAFERS Otwin Breitenstein1

    E-Print Network [OSTI]

    LUMINESCENCE IMAGING VERSUS LOCK-IN THERMOGRAPHY ON SOLAR CELLS AND WAFERS Otwin Breitenstein1 luminescence and lock-in thermography (LIT) results on one exemplary sample and to draw corresponding, Lock-in thermography, 1 INTRODUCTION The technique of infrared (IR) camera-based lock-in thermography

  7. Megasonic cleaning of wafers in electrolyte solutions: Possible role of electro-acoustic and cavitation effects

    E-Print Network [OSTI]

    Deymier, Pierre

    -acoustic and cavitation effects M. Keswani a , S. Raghavan a,*, P. Deymier a , S. Verhaverbeke b a Materials Science Keywords: Wafer Cleaning Electrolyte Megasonic Electro-acoustic Cavitation Pressure amplitude a b s t r a c Waals adhesion forces. The effect of ionic strength on cavitation has been investigated through

  8. Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

    E-Print Network [OSTI]

    Piner, Edwin L.

    The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

  9. Wafer-Scale Fabrication of Nanofluidic Arrays and Networks Using Nanoimprint Lithography and Lithographically Patterned Nanowire

    E-Print Network [OSTI]

    Wafer-Scale Fabrication of Nanofluidic Arrays and Networks Using Nanoimprint Lithography of nanofluidic channels (up to 1 mm in length) filled with solutions of either fluorescent dye or 20 nm diameter-replica process was also used to create a large two-dimensional network of crossed nanofluidic channels. Large

  10. Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers

    E-Print Network [OSTI]

    Rogers, John A.

    , and on/off ratios were 103 . These results may represent important steps toward a low-cost approach thicknesses derived from low-cost bulk Si 111 wafers. We begin with a description of the procedures for fabricating these structures and transfer printing them onto plastic sub- strates via elastomeric stamps. We

  11. Method for vacuum fusion bonding

    DOE Patents [OSTI]

    Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

    2001-01-01T23:59:59.000Z

    An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

  12. Fusion bonding and alignment fixture

    DOE Patents [OSTI]

    Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

    2000-01-01T23:59:59.000Z

    An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all the components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

  13. Method of bonding

    DOE Patents [OSTI]

    Saller, deceased, Henry A. (late of Columbus, OH); Hodge, Edwin S. (Columbus, OH); Paprocki, Stanley J. (Columbus, OH); Dayton, Russell W. (Columbus, OH)

    1987-12-01T23:59:59.000Z

    1. A method of making a fuel-containing structure for nuclear reactors, comprising providing an assembly comprising a plurality of fuel units; each fuel unit consisting of a core plate containing thermal-neutron-fissionable material, sheets of cladding metal on its bottom and top surfaces, said cladding sheets being of greater width and length than said core plates whereby recesses are formed at the ends and sides of said core plate, and end pieces and first side pieces of cladding metal of the same thickness as the core plate positioned in said recesses, the assembly further comprising a plurality of second side pieces of cladding metal engaging the cladding sheets so as to space the fuel units from one another, and a plurality of filler plates of an acid-dissolvable nonresilient material whose melting point is above 2000.degree. F., each filler plate being arranged between a pair of said second side pieces and the cladding plates of two adjacent fuel units, the filler plates having the same thickness as the second side pieces; the method further comprising enclosing the entire assembly in an envelope; evacuating the interior of the entire assembly through said envelope; applying inert gas under a pressure of about 10,000 psi to the outside of said envelope while at the same time heating the assembly to a temperature above the flow point of the cladding metal but below the melting point of any material of the assembly, whereby the envelope is pressed against the assembly and integral bonds are formed between plates, sheets, first side pieces, and end pieces and between the sheets and the second side pieces; slowly cooling the assembly to room temperature; removing the envelope; and dissolving the filler plates without attacking the cladding metal.

  14. Low Temperature Material Bonding Techniq Ue

    DOE Patents [OSTI]

    Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

    2002-08-06T23:59:59.000Z

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  15. Local Option- Industrial Facilities and Development Bonds

    Broader source: Energy.gov [DOE]

    Under the Utah Industrial Facilities and Development Act, counties, municipalities, and state universities in Utah may issue Industrial Revenue Bonds (IRBs) or Industrial Development Bonds (IDBs)...

  16. Pooled Bond Program (South Dakota)

    Broader source: Energy.gov [DOE]

    The Pooled Bond Program offered by the Economic Development Finance Authority is designed for capital intensive projects, providing small businesses access to larger capital markets for tax-exempt...

  17. Qualified Energy Conservation Bonds (QECBs)

    Broader source: Energy.gov [DOE]

    The ''Energy Improvement and Extension Act of 2008'', enacted in October 2008, authorized the issuance of Qualified Energy Conservation Bonds (QECBs) that may be used by state, local and tribal...

  18. Cavity based furnace for wafer screening - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C o .Fornl ProjectDeterminatIonCathodeOpen orSolar

  19. CONVERTIBLE BONDS IN A DEFAULTABLE DIFFUSION MODEL

    E-Print Network [OSTI]

    Jeanblanc, Monique

    CONVERTIBLE BONDS IN A DEFAULTABLE DIFFUSION MODEL Tomasz R. Bielecki Department of Applied Research Grant PS12918. #12;2 Convertible Bonds in a Defaultable Diffusion Model 1 Introduction In [4), such as Convertible Bonds (CB), and we provided a rigorous decomposition of a CB into a bond component and a (game

  20. Emissivity properties of silicon wafers and their application to radiation thermometry

    SciTech Connect (OSTI)

    Iuchi, T.; Seo, T. [Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)] [Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2013-09-11T23:59:59.000Z

    We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on the simulation and experimental results, we developed two different radiation thermometry methods for silicon wafers, the first based on a polarized emissivity-invariant condition, and the second based on the relationship between the ratio of the p-to s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9?5 ?m), irrespective of dielectric film thickness and substrate resistivity due to the dopant concentrations. Temperature measurements were estimated to have expanded uncertainties (k=2) of less than 5 °C. A radiometer system with wavelengths above 4.5 ?m was successfully developed because the system was not influenced by background noise caused by a high-intensity heating lamp.

  1. Development of a melting and directional solidification process for improving the grain structure and electronic properties of a silicon wafer

    E-Print Network [OSTI]

    Greenlee, Alison S

    2011-01-01T23:59:59.000Z

    A manufacturing process that produces high quality, inexpensive kerfless silicon wafers for photovoltaic cells is highly desirable. The process herein described was developed to melt and directionally solidify fine-grained ...

  2. Geek-Up[09.03.10]-- Innovative Silicon Wafers, Real-Time Power Traders and Petascale & Exascale Supercomputers

    Broader source: Energy.gov [DOE]

    A trillion holes in a silicon wafer the size of a compact disk? Buying when the Columbia River Basin is low, and selling when it's high. And how supercomputers can revolutionize climate science and modeling.

  3. Transient liquid phase ceramic bonding

    DOE Patents [OSTI]

    Glaeser, Andreas M. (Berkeley, CA)

    1994-01-01T23:59:59.000Z

    Ceramics are joined to themselves or to metals using a transient liquid phase method employing three layers, one of which is a refractory metal, ceramic or alloy. The refractory layer is placed between two metal layers, each of which has a lower melting point than the refractory layer. The three layers are pressed between the two articles to be bonded to form an assembly. The assembly is heated to a bonding temperature at which the refractory layer remains solid, but the two metal layers melt to form a liquid. The refractory layer reacts with the surrounding liquid and a single solid bonding layer is eventually formed. The layers may be designed to react completely with each other and form refractory intermetallic bonding layers. Impurities incorporated into the refractory metal may react with the metal layers to form refractory compounds. Another method for joining ceramic articles employs a ceramic interlayer sandwiched between two metal layers. In alternative embodiments, the metal layers may include sublayers. A method is also provided for joining two ceramic articles using a single interlayer. An alternate bonding method provides a refractory-metal oxide interlayer placed adjacent to a strong oxide former. Aluminum or aluminum alloys are joined together using metal interlayers.

  4. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    SciTech Connect (OSTI)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15T23:59:59.000Z

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  5. Method for protecting chip corners in wet chemical etching of wafers

    DOE Patents [OSTI]

    Hui, W.C.

    1994-02-15T23:59:59.000Z

    The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible. 63 figures.

  6. Ideally Glassy Hydrogen Bonded Networks

    E-Print Network [OSTI]

    J. C. Phillips

    2005-08-05T23:59:59.000Z

    The axiomatic theory of ideally glassy networks, which has proved effective in describing phase diagrams and properties of chalcogenide and oxide glasses and their foreign interfaces, is broadened here to include intermolecular interactions in hydrogen-bonded polyalcohols such as glycerol, monosaccharides (glucose), and the optimal bioprotective hydrogen-bonded disaccharide networks formed from trehalose. The methods of Lagrangian mechanics and Maxwellian scaffolds are useful at the molecular level when bonding hierarchies are characterized by constraint counting similar to the chemical methods used by Huckel and Pauling. Whereas Newtonian molecular dynamical methods are useful for simulating large-scale interactions for times of order 10 ps, constraint counting describes network properties on glassy (almost equilibrated) time scales, which may be of cosmological order for oxide glasses, or years for trehalose. The ideally glassy network of trehalose may consist of extensible tandem sandwich arrays.

  7. Bond Programs | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass ConversionsSouthby 2022 |BleckleyMotionBocaBond County, Illinois:Bond

  8. Bonded polyimide fuel cell package

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

    2010-06-08T23:59:59.000Z

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  9. Non-bonded ultrasonic transducer

    DOE Patents [OSTI]

    Eoff, J.M.

    1984-07-06T23:59:59.000Z

    A mechanically assembled non-bonded ultrasonic transducer includes a substrate, a piezoelectric film, a wetting agent, a thin metal electrode, and a lens held in intimate contact by a mechanical clamp. No epoxy or glue is used in the assembly of this device.

  10. Major Business Expansion Bond Program (Maine)

    Broader source: Energy.gov [DOE]

    The Major Business Expansion Bond Program provides long-term, credit-enhanced financing up to $25,000,000 at taxable bond rates for businesses creating or retaining at least 50 jobs; up to $10,000...

  11. Industrial Revenue Bond Issuance Cost Assistance (Wisconsin)

    Broader source: Energy.gov [DOE]

    Industrial Revenue Bonds (IRB) are tax-exempt bonds that can be used to stimulate capital investment and job creation by providing private borrowers with access to financing at interest rates that...

  12. Secondary Market Taxable Bond Program (Maine)

    Broader source: Energy.gov [DOE]

    The Secondary Market Taxable Bond Program provides tax-exempt interest rate bond financing for real estate and machinery and equipment acquisitions. Up to 90% of the project debt may be financed,...

  13. The Market for Borrowing Corporate Bonds

    E-Print Network [OSTI]

    Asquith, Paul

    This paper describes the market for borrowing corporate bonds using a comprehensive data set from a major lender. The cost of borrowing corporate bonds is comparable to the cost of borrowing stock, between 10 and 20 basis ...

  14. Bonded, walk-off compensated optical elements

    DOE Patents [OSTI]

    Ebbers, Christopher A. (Livermore, CA)

    2003-04-08T23:59:59.000Z

    A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

  15. Clean Energy and Bond Finance Initiative

    Broader source: Energy.gov [DOE]

    Provides information on Clean Energy and Bond Finance Initiative (CE+BFI). CE+BFI brings together public infrastructure finance agencies, clean energy public fund managers and institutional investors across the country to explore how to raise capital at scale for clean energy development through bond financing. Author: Clean Energy and Bond Finance Initiative

  16. Productivity Improvement for the SHX--SEN's Single-Wafer High-Current Ion Implanter

    SciTech Connect (OSTI)

    Ninomiya, Shiro; Ochi, Akihiro; Kimura, Yasuhiko; Yumiyama, Toshio; Kudo, Tetsuya; Kurose, Takeshi; Kariya, Hiroyuki; Tsukihara, Mitsukuni; Ishikawa, Koji; Ueno, Kazuyoshi [SEN Corporation, 1501, Imazaike, Saijo, Ehime, 799-1362 (Japan)

    2011-01-07T23:59:59.000Z

    Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.

  17. Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

    E-Print Network [OSTI]

    Tao, Li; Lee, Jongho; Chou, Harry; McDonnell, Stephen J; Ferrer, Domingo A; Babenco, Matias; Wallace, Robert M; Banerjee, Sanjay K; Ruoff, Rodney S; Akinwande, Deji

    2012-01-01T23:59:59.000Z

    Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabr...

  18. Sandia National Laboratories: NESL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  19. Bonding, antibonding and tunable optical forces in asymmetric membranes

    E-Print Network [OSTI]

    Hui, Pui-Chuen

    We demonstrate that tunable attractive (bonding) and repulsive (anti-bonding) forces can arise in highly asymmetric structures coupled to external radiation, a consequence of the bonding/anti-bonding level repulsion of ...

  20. Measurement of differential and actual recombination parameters on crystalline silicon wafers

    SciTech Connect (OSTI)

    Schmidt, J.

    1999-10-01T23:59:59.000Z

    In this paper, for the first time, measurements of differential and actual recombination parameters on crystalline silicon wafers are directly compared. In order to determine the differential bulk lifetime and the differential surface recombination velocity (SRV), small-signal light-biased microwave-detected photoconductance decay (MW-PCD) and modulated free-carrier adsorption (MFCA) measurements are performed. The results obtained by these widespread techniques are compared with quasi-steady-state photoconductance (QSSPC) measurements, which directly determine the actual recombination parameters. On high-resistivity (1,000 {Omega}cm) float-zone (FL) n-type silicon at high injection levels, it is shown that the differentially measured Auger lifetime is a factor of three smaller than the actual Auger lifetime. This finding is in excellent agreement with the theory derived in this work. Thermally oxidized low-resistivity ({approximately}1 {Omega}cm) p-Si wafers serve as an experimental vehicle to compare the differential and the actual injection-level dependent SRV of the Si-SiO{sub 2} interface under low-injection conditions. Using two different integration procedures, the actual SRV is calculated from the differentially measured quantity. The actual SRV measured by the QSSPC technique is found to match perfectly the actual SRV obtained by integration.

  1. Bond Program | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass ConversionsSouthby 2022 |BleckleyMotionBocaBond County, Illinois:

  2. Review of In-situ Fabrication Methods of Piezoelectric Wafer Active Sensor for Sensing and Actuation Applications

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    1 Review of In-situ Fabrication Methods of Piezoelectric Wafer Active Sensor for Sensing-echo, and electromechanical impedance methods. Traditionally, structural integrity tests required attachment of sensors and magnitude of the surfaces measured (such as aircraft, bridges, structural supports, etc.). In addition

  3. An Algorithm to Convert Wafer to Calendar-Based Preventive Maintenance Schedules for Semiconductor Manufacturing Systems1

    E-Print Network [OSTI]

    Fernandez, Emmanuel

    An Algorithm to Convert Wafer to Calendar-Based Preventive Maintenance Schedules for Semiconductor}@ececs.uc.edu Abstract-- The work presented here is related to the area of Optimal Preventive Maintenance (PM) Scheduling. Preventive Maintenance (PM) is a standard practice followed to increase reliability and availability

  4. Qualified Energy Conservation Bonds | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    description of qualified energy conservation bonds, including process and mechanics, case studies, utilization trends, barriers, and regulatory and legal issues. Author:...

  5. Tax-Exempt Bond Financing (Delaware)

    Broader source: Energy.gov [DOE]

    The Delaware Economic Development Authority provides tax-exempt bond financing for financial assistance to new or expanding businesses, governmental units and certain organizations that are exempt...

  6. Hydrogen Adsorption Induces Interlayer Carbon Bond Formation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported Few-Layer Graphene Friday, February 28, 2014 Among the allotropes of carbon, diamond has some of the most...

  7. Tax-Exempt Industrial Revenue Bonds (Kansas)

    Broader source: Energy.gov [DOE]

    Tax-Exempt Industrial Revenue Bonds are issued by cities and counties for the purchase, construction, improvement or remodeling of a facility for agricultural, commercial, hospital, industrial,...

  8. Nuclear reactor multiphysics via bond graph formalism

    E-Print Network [OSTI]

    Sosnovsky, Eugeny

    2014-01-01T23:59:59.000Z

    This work proposes a simple and effective approach to modeling nuclear reactor multiphysics problems using bond graphs. Conventional multiphysics simulation paradigms normally use operator splitting, which treats the ...

  9. How Hydrogen Bond Redundancy Affects Protein Flexibility

    E-Print Network [OSTI]

    Naomi Fox; Filip Jagodzinski; Jeanne Hardy; Ileana Streinu

    Modeling a Protein as a BodyBarHinge and Associated Graph Main Question: Stability in proteins is the resistance to denaturation, or unfolding. A protein that is highly stable has a high tolerance to bonds breaking before unfolding; an unstable protein has less tolerance. In this study, we focus on the question, how many hydrogen bonds

  10. Development of a fixed abrasive slicing technique (FAST) for reducing the cost of photovoltaic wafers. Final subcontract report, 9 January 1991--14 April 1991

    SciTech Connect (OSTI)

    Schmid, F. [Crystal Systems, Inc., Salem, MA (United States)

    1991-12-01T23:59:59.000Z

    This report examines a wafer slicing technique developed by Crystal Systems, Inc. that reduces the cost of photovoltaic wafers. This fixed, abrasive slicing technique (FAST) uses a multiwire bladepack and a diamond-plated wirepack; water is the coolant. FAST is in the prototype production stage and reduces expendable material costs while retaining the advantages of a multiwire slurry technique. The cost analysis revealed that costs can be decreased by making more cuts per bladepack and slicing more wafers per linear inch. Researchers studied the degradation of bladepacks and increased wirepack life. 21 refs.

  11. Water dimer hydrogen bond stretch, donor torsion overtone, and ``in-plane bend'' vibrations

    E-Print Network [OSTI]

    Cohen, Ronald C.

    Water dimer hydrogen bond stretch, donor torsion overtone, and ``in-plane bend'' vibrations Frank N. Brown Los Alamos National Laboratory, Los Alamos, New Mexico 87545 Heather A. Harker and Poul B. © 2003 American Institute of Physics. DOI: 10.1063/1.1614774 I. INTRODUCTION Water clusters have been

  12. Alkyl Selenide-and Alkyl Thiolate-Functionalized Gold Nanoparticles: Chain Packing and Bond Nature

    E-Print Network [OSTI]

    Parikh, Atul N.

    York 11201, JDR & ANP, Bioscience Division, Los Alamos National Laboratory, Los Alamos, New Mexico, and bonding characteristics were investigated using a combination of transmission electron microscopy, UV-density polymer brushes by surface-initiated living radical polymerization,3 as centers in networks,4 as catalysts

  13. Modeling Low-Barrier Hydrogen Bonds and Solution Effects

    E-Print Network [OSTI]

    Theel, Kelly

    2013-01-01T23:59:59.000Z

    Modeling low-barrier hydrogen bonds . . . . . 1.3 ModelingTypical hydrogen-bond 1-D potential energy surface . LBHB 1-representation of a Low Barrier Hydrogen Bond . . . . . . .

  14. sp2 Carbon-Hydrogen Bond (C-H) Functionalization

    E-Print Network [OSTI]

    Yotphan, Sirilata

    2010-01-01T23:59:59.000Z

    C-C) bonds from carbon-hydrogen (C-H) bonds in organicof them is unusually short. Hydrogen atoms were included insp 2 Carbon-Hydrogen Bond (C-H) Functionalization By

  15. Low Barrier Hydrogen Bonds in Acyclic Tertiary Diamines

    E-Print Network [OSTI]

    Khodagholian, Sevana

    2010-01-01T23:59:59.000Z

    In Search of a Low Barrier Hydrogen Bond in Proton Bridgedand J.A. Gerlt, “The Low Barrier Hydrogen Bond in EnzymaticShow That Low-Barrier Hydrogen Bonds do not Offer a

  16. Process Of Bonding Copper And Tungsten

    DOE Patents [OSTI]

    Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO); Davis, John W. (Ballwin, MO)

    2000-07-18T23:59:59.000Z

    Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

  17. WAFER TEST CAVITY -Linking Surface Microstructure to RF Performance: a ‘Short-­?Sample Test Facility’ for characterizing superconducting materials for SRF cavities.

    SciTech Connect (OSTI)

    Pogue, Nathaniel; Comeaux, Justin; McIntyre, Peter

    2014-05-30T23:59:59.000Z

    The Wafer Test cavity was designed to create a short sample test system to determine the properties of the superconducting materials and S?I?S hetero?structures. The project, funded by ARRA, was successful in accomplishing several goals to achieving a high gradient test system for SRF research and development. The project led to the design and construction of the two unique cavities that each severed unique purposes: the Wafer test Cavity and the Sapphire Test cavity. The Sapphire Cavity was constructed first to determine the properties of large single crystal sapphires in an SRF environment. The data obtained from the cavity greatly altered the design of the Wafer Cavity and provided the necessary information to ascertain the Wafer Test cavity’s performance.

  18. Decoupling bulk- and surface-limited lifetimes in thin kerfless silicon wafers using spectrally resolved transient absorption pump-probe spectroscopy and computer simulations

    E-Print Network [OSTI]

    Siah, Sin Cheng

    2013-01-01T23:59:59.000Z

    One of the key technological objectives to further decrease the cost of silicon (Si) PV and enable manufacturing of crystalline silicon is to improve the quality of thin, kerfless Si wafers to monocrystalline equivalent. ...

  19. Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable...

    Broader source: Energy.gov (indexed) [DOE]

    presentation overview of qualified energy conservation bond and new clean renewable energy bonds, including characteristics, mechanics, allocated volume, and other information....

  20. Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with covalently-bound hexafluoroisopropanol groups. Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...

  1. Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues. Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues....

  2. A Preorganized Hydrogen Bond Network and Its Effect on Anion...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Preorganized Hydrogen Bond Network and Its Effect on Anion Stability. A Preorganized Hydrogen Bond Network and Its Effect on Anion Stability. Abstract: Rigid tricyclic locked in...

  3. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Acidic Polymers for Chemical Vapor Sensing. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. Abstract: A review with 171 references. Hydrogen-bond acidic polymers for...

  4. Local Option- Industrial Facilities and Development Bonds (Utah)

    Broader source: Energy.gov [DOE]

    Under the Utah Industrial Facilities and Development Act, counties, municipalities, and state universities in Utah may issue Industrial Revenue Bonds (IRBs) or Industrial Development Bonds (IDBs)...

  5. Qualified Energy Conservation Bonds (ŤQECBs?) & New Clean Renewable...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Qualified Energy Conservation Bonds ("QECBs") & New Clean Renewable Energy Bonds ("New CREBs") Slide 1 DISCLAIMER: The information in this presentation is for informational...

  6. Investigations into the Nature of Halogen Bonding Including Symmetry...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    into the Nature of Halogen Bonding Including Symmetry Adapted Perturbation Theory Analyses. Investigations into the Nature of Halogen Bonding Including Symmetry Adapted...

  7. Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Multiple Bonds Evaluated Using Oxygen K-edge Spectroscopy and Electronic Structure Theory . Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen K-edge Spectroscopy...

  8. The Ohio Enterprise Bond Fund (Ohio)

    Broader source: Energy.gov [DOE]

    The Ohio Enterprise Bond Fund (OEBF) was created in 1988 to promote economic development, create and retain quality jobs and assist governmental operations. The program enables non-profit and for...

  9. Industrial Revenue Bond Program (District of Columbia)

    Broader source: Energy.gov [DOE]

    The District provides below market bond financing to lower the costs of borrowing for qualified capital construction and renovation projects. The program is available to non-profits, institutions,...

  10. Corporate bond repurchases and earnings management

    E-Print Network [OSTI]

    Lemayian, Zawadi Rehema

    2013-01-01T23:59:59.000Z

    This paper investigates whether earnings management incentives are associated with gains/losses recognized when firms repurchase bonds. The research question is motivated by the inclusion of these gains/losses in firms' ...

  11. Method of bonding metals to ceramics

    DOE Patents [OSTI]

    Maroni, V.A.

    1991-04-23T23:59:59.000Z

    A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

  12. Bonding Tools | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently20,000 RussianBy:WhetherNovember 13, 2009OakDepartmentBillBelowRSSBonds are one of the

  13. Sandia Energy - Diffusion Bonding Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Scienceand RequirementsCoatings Initiated at PNNL's SequimReactors ToDecision SupportDesal

  14. Draft Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel

    SciTech Connect (OSTI)

    N /A

    1999-07-30T23:59:59.000Z

    This document summarizes the U.S. Department of Energy's ''Draft Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel''. In addition to information concerning the background, purpose and need for the proposed action, and the National Environmental Policy Act process, this summary describes the characteristics of sodium-bonded spent nuclear fuel, the proposed treatment methods, the proposed facilities, the alternatives considered, and the environmental consequences of these alternatives. A glossary is included at the end to assist the reader with some of the technical terms used in this document.

  15. July 18, 2012 Using Qualified Energy Conservation Bonds for Public

    E-Print Network [OSTI]

    July 18, 2012 Using Qualified Energy Conservation Bonds for Public Building Upgrades: Reducing Energy Bills in the City of Philadelphia Qualified Energy Conservation Bonds (QECBs) are federally Energy Conservation Bond (QECB) is a bond that enables qualified state, tribal and local government

  16. Qualified Energy Conservation Bond State-by-State Summary Tables

    Broader source: Energy.gov [DOE]

    Provides a list of qualified energy conservation bond state summary tables. Author: Energy Programs Consortium

  17. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01T23:59:59.000Z

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  18. Sandia National Laboratories: SCO2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  19. Sandia National Laboratories: Brayton cycle

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  20. Sandia National Laboratories: Brayton Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  1. Sandia National Laboratories: Nuclear Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  2. The Ties That Bond: Re-Examining the Relationship between Facebook Use and Bonding Social Capital

    E-Print Network [OSTI]

    Michigan, University of

    The Ties That Bond: Re-Examining the Relationship between Facebook Use and Bonding Social Capital established a positive relationship between measures of Facebook use and perceptions of social capital. Like other social network sites, Facebook is especially well-positioned to enhance users' bridging social

  3. Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, Tobias Steinel, and M. D. Fayer*

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, TobiasVed: September 1, 2003; In Final Form: December 18, 2003 The nature of hydrogen bonding networks following hydrogen bond breaking is investigated using vibrational echo correlation spectroscopy of the hydroxyl

  4. Shirzadi et al. Surface and Interface Analysis 2001; 31:609-618 Interface evolution and bond strength when diffusion bonding

    E-Print Network [OSTI]

    Cambridge, University of

    strength when diffusion bonding materials with stable oxide films A.A. Shirzadi* , H. Assadi and E morphologies and strengths of aluminium diffusion bonds are reviewed. Previous approaches, proposed to overcome for both solid-state diffusion bonding and conventional transient liquid phase (TLP) diffusion bonding. Non

  5. Bond Strength Measurements from an Australian Standard Bond Wrench in Comparison to the Unbalanced ASTM C 1072 Bond Wrench to the Balanced and Unbalanced Wrenches

    E-Print Network [OSTI]

    Suresh, Sri Vishnu Chaitanya Guptha

    2014-08-14T23:59:59.000Z

    Bond wrenches. The Australian wrench values were significantly higher than the American bond wrenches for similar types of samples. Hence it was recommended that the tests be carried out by replacing the cement with Portland cement. This experimental...

  6. Bonded ultrasonic transducer and method for making

    DOE Patents [OSTI]

    Dixon, Raymond D. (Los Alamos, NM); Roe, Lawrence H. (Los Alamos, NM); Migliori, Albert (Santa Fe, NM)

    1995-01-01T23:59:59.000Z

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

  7. Process Of Bonding Copper And Tungsten

    DOE Patents [OSTI]

    Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO)

    1999-11-23T23:59:59.000Z

    Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

  8. Power and energy transduction analysis of piezoelectric wafer-active sensors for

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    the operational safety and reliability, would conceivably reduce the number of unscheduled repairs, and would and the associated safety issues are a growing national concern. Over 27% of our nation's bridges are structurally bring down maintenance cost. The type and efficiency of the SHM sensors play a crucial role in the SHM

  9. Alkyl Chlorides as Hydrogen Bond Acceptors

    SciTech Connect (OSTI)

    Nadas, Janos I [ORNL; Vukovic, Sinisa [ORNL; Hay, Benjamin [ORNL

    2012-01-01T23:59:59.000Z

    To gain an understanding of the role of an alkyl chloride as a hydrogen bond acceptor, geometries and interaction energies were calculated at the MP2/aug-cc-pVDZ level of theory for complexes between ethyl chloride and representative hydrogen donor groups. The results establish that these donors, which include hydrogen cyanide, methanol, nitrobenzene, pyrrole, acetamide, and N-methylurea, form X-H {hor_ellipsis} Cl hydrogen bonds (X = C, N, O) of weak to moderate strength, with {Delta}E values ranging from -2.8 to -5.3 kcal/mol.

  10. Phosphate-bonded calcium aluminate cements

    DOE Patents [OSTI]

    Sugama, Toshifumi (Mastic Beach, NY)

    1993-01-01T23:59:59.000Z

    A method is described for making a rapid-setting phosphate-bonded cementitious material. A powdered aluminous cement is mixed with an aqueous solution of ammonium phosphate. The mixture is allowed to set to form an amorphous cementitious material which also may be hydrothermally treated at a temperature of from about 120.degree. C. to about 300.degree. C. to form a crystal-containing phosphate-bonded material. Also described are the cementitious products of this method and the cement composition which includes aluminous cement and ammonium polyphosphate.

  11. Phosphate-bonded calcium aluminate cements

    DOE Patents [OSTI]

    Sugama, T.

    1993-09-21T23:59:59.000Z

    A method is described for making a rapid-setting phosphate-bonded cementitious material. A powdered aluminous cement is mixed with an aqueous solution of ammonium phosphate. The mixture is allowed to set to form an amorphous cementitious material which also may be hydrothermally treated at a temperature of from about 120 C to about 300 C to form a crystal-containing phosphate-bonded material. Also described are the cementitious products of this method and the cement composition which includes aluminous cement and ammonium polyphosphate. 10 figures.

  12. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN); McMillan, April D. (Knoxville, TN); Paulauskas, Felix L. (Oak Ridge, TN); Fathi, Zakaryae (Cary, NC); Wei, Jianghua (Raleigh, NC)

    1998-01-01T23:59:59.000Z

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy.

  13. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

    1998-09-08T23:59:59.000Z

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

  14. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

    1998-08-25T23:59:59.000Z

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

  15. Nitride-bonded silicon carbide composite filter

    SciTech Connect (OSTI)

    Thomson, B.N.; DiPietro, S.G.

    1995-12-01T23:59:59.000Z

    The objective of this program is to develop and demonstrate an advanced hot gas filter, using ceramic component technology, with enhanced durability to provide increased resistance to thermal fatigue and crack propagation. The material is silicon carbide fiber reinforced nitride bonded silicon carbide.

  16. Fluorinated diamond bonded in fluorocarbon resin

    DOE Patents [OSTI]

    Taylor, Gene W. (Los Alamos, NM)

    1982-01-01T23:59:59.000Z

    By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

  17. Air America: Upholding the Airmen's Bond

    E-Print Network [OSTI]

    Kilgard, Michael P.

    Air America: Upholding the Airmen's Bond April 18, 2009 The University of Texas at Dallas Conference Center Auditorium A Symposium to Acknowledge and Commemorate Air America Rescue Efforts during with Air America Senior Operations Officer, CIA, Retired 2 p.m. Laos Rescues: Lima Site 85 Dr. Tim Castle

  18. Bayesian field theoretic reconstruction of bond potential and bond mobility in single molecule force spectroscopy

    E-Print Network [OSTI]

    Chang, Joshua C; Chou, Tom

    2015-01-01T23:59:59.000Z

    Quantifying the forces between and within macromolecules is a necessary first step in understanding the mechanics of molecular structure, protein folding, and enzyme function and performance. In such macromolecular settings, dynamic single-molecule force spectroscopy (DFS) has been used to distort bonds. The resulting responses, in the form of rupture forces, work applied, and trajectories of displacements, have been used to reconstruct bond potentials. Such approaches often rely on simple parameterizations of one-dimensional bond potentials, assumptions on equilibrium starting states, and/or large amounts of trajectory data. Parametric approaches typically fail at inferring complex-shaped bond potentials with multiple minima, while piecewise estimation may not guarantee smooth results with the appropriate behavior at large distances. Existing techniques, particularly those based on work theorems, also do not address spatial variations in the diffusivity that may arise from spatially inhomogeneous coupling to...

  19. C-O Bond Activation and C-C Bond Formation Paths in Catalytic CO Hydrogenation

    E-Print Network [OSTI]

    Loveless, Brett

    2012-01-01T23:59:59.000Z

    Anderson, The Fischer-Tropsch and Related Synthesis, Wiley,Anderson, The Fischer-Tropsch and Related Synthesis, Wiley,C-C bond formation paths in Fischer-Tropsch synthesis are

  20. Various Carbon to Carbon Bond Lengths Inter-related via the Golden Ratio, and their Linear Dependence on Bond Energies

    E-Print Network [OSTI]

    Raji Heyrovska

    2008-09-11T23:59:59.000Z

    This work presents the relations between the carbon to carbon bond lengths in the single, double and triple bonds and in graphite, butadiene and benzene. The Golden ratio, which was shown to divide the Bohr radius into two parts pertaining to the charged particles, the electron and proton, and to divide inter-atomic distances into their cationic and anionic radii, also plays a role in the carbon-carbon bonds and in the ionic/polar character of those in graphite, butadiene and benzene. Further, the bond energies of the various CC bonds are shown to vary linearly with the bond lengths.

  1. Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  2. Evaluation of the Role of Water in the H2 Bond Formation by Ni(II)-based Electrocatalysts

    SciTech Connect (OSTI)

    Ho, Ming-Hsun; Raugei, Simone; Rousseau, Roger J.; Dupuis, Michel; Bullock, R. Morris

    2013-07-17T23:59:59.000Z

    We investigate the role of water in the H-H bond formation by a family of nickel molecular catalysts that exhibit high rates for H2 production in acetonitrile solvent. A key feature leading to the high reactivity is the Lewis acidity of the Ni(II) center and pendant amines in the diphosphine ligand that function as Lewis bases, facilitating H-H bond formation or cleavage. Significant increases in the rate of H2 production have been reported in the presence of added water. Our calculations show that molecular water can displace an acetonitrile solvent molecule in the first solvation shell of the metal. One or two water molecules can also participate in shuttling a proton that can combine with a metal hydride to form the H-H bond. However the participation of the water molecules does not lower the barrier to H-H bond formation. Thus these calculations suggest that the rate increase due to water in these electrocatalysts is not associated with the elementary step of H-H bond formation or cleavage, but rather with the proton delivery steps. We attribute the higher barrier in the H-H bond formation in the presence of water to a decrease in direct interaction between the protic and hydridic hydrogen atoms forced by the water molecules. This research was supported as part of the Center for Molecular Electrocatalysis, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences. Computational resources were provided at W. R. Wiley Environmental Molecular Science Laboratory - Pacific Northwest National Laboratory, the National Energy Research Scientific Computing Center (NERSC) at Lawrence Berkeley National Laboratory, and the Jaguar supercomputer at Oak Ridge National Laboratory.

  3. Experimental bond critical point and local energy density properties...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mn-O, Fe-O and Co-O bonded interactions for Abstract: Bond critical point, bcp, and local energy density properties for the electron density, ED, distributions, calculated with...

  4. Pre-plated reactive diffusion-bonded battery electrode plaques

    DOE Patents [OSTI]

    Maskalick, Nicholas J. (Pittsburgh, PA)

    1984-01-01T23:59:59.000Z

    A high strength, metallic fiber battery plaque is made using reactive diffusion bonding techniques, where a substantial amount of the fibers are bonded together by an iron-nickel alloy.

  5. Single-Issue Industrial Revenue Bond Program (Missouri)

    Broader source: Energy.gov [DOE]

    The Missouri Development Finance Board administers a Single-Issue Tax-Exempt Industrial Revenue Bond Program as well as a Taxable Industrial Revenue Bond Program. The Tax-Exempt Program finances (i...

  6. Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Abstract: Since oxygen atom...

  7. ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement ID:23278) ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement ID:23278) 2013 DOE Hydrogen and Fuel...

  8. Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang, Yong Ding, Zhong Lin Wang , Robert L. Snyder

    E-Print Network [OSTI]

    Wang, Zhong L.

    Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang Interface structure GaN films were deposited on Si (400) wafers by a pulsed laser deposition technique, thereby achieving polar or nonpolar film surfaces as desired. The GaN film and Si substrate were found

  9. Ultrafast conversions between hydrogen bonded structures in liquid water observed by femtosecond x-ray spectroscopy

    E-Print Network [OSTI]

    Wen, Haidan

    2010-01-01T23:59:59.000Z

    manifesting in fewer/weaker hydrogen bonds and structuralstructures with weaker hydrogen-bonding is recorded viais characteristic of the hydrogen bond network in water. The

  10. Partial-Transient-Liquid-Phase Bonding of Advanced Ceramics Using Surface-Modified Interlayers

    E-Print Network [OSTI]

    Reynolds, Thomas Bither

    2012-01-01T23:59:59.000Z

    Theoretical-Model for Diffusion Bonding." Metal Science 16,Derby, B. & Wallach, E. "Diffusion Bonding - Development ofInterfacial Contact during Diffusion Bonding." Metallurgical

  11. Hydrogen Bonding DOI: 10.1002/anie.200501349

    E-Print Network [OSTI]

    Simons, Jack

    systems[5­13] and crystal engineering.[14­18] Most C�H···O hydrogen bonds have been observed for the soHydrogen Bonding DOI: 10.1002/anie.200501349 Observation of Weak C�H···O Hydrogen Bonding to Unactivated Alkanes** Xue-Bin Wang, Hin-Koon Woo, Boggavarapu Kiran, and Lai-Sheng Wang* The hydrogen bond

  12. Measuring Interfacial Stiffness of Adhesively-Bonded Wood

    E-Print Network [OSTI]

    Nairn, John A.

    , the interfaces will fail, the elements will cease to share load, and the composite will have poor properties property. Nearly all methods for characterizing wood adhesive bonds consider only strength of the bonds. Typically a bond line is loaded until failure and the final load at failure is recorded. Some common

  13. Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang*

    E-Print Network [OSTI]

    Caflisch, Amedeo

    Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang* Department of Biochemistry, University of Zurich, Zurich, Switzerland Abstract Ligand binding involves breakage of hydrogen bonds with water molecules and formation of new hydrogen bonds between protein and ligand. In this work, the change

  14. Flip chip electrical interconnection by selective electroplating and bonding

    E-Print Network [OSTI]

    Lin, Liwei

    the interconnection and device substrates to en- hance the ion diffusion during the final electroplating and bondingFlip chip electrical interconnection by selective electroplating and bonding L.-W. Pan, P. Yuen, L of flip-chip, selective elec- troplating and bonding. The electrical interconnection lines are built

  15. Oil prices and government bond risk premiums Herv Alexandre*

    E-Print Network [OSTI]

    Boyer, Edmond

    Oil prices and government bond risk premiums By Hervé Alexandre*ş Antonin de Benoist * Abstract : This article analyses the impact of oil price on bond risk premiums issued by emerging economies. No empirical study has yet focussed on the effects of the oil price on government bond risk premiums. We develop

  16. Energetics of hydrogen bonds in peptides Sheh-Yi Sheu*

    E-Print Network [OSTI]

    Sheu, Sheh-Yi

    for water. We find that the activation energy for the rupture of the hydrogen bond in a -sheet under calculation can be useful for the prediction of hydrogen bond strengths in various environments of interest extensively to calculate free energy changes caused by hydrogen bond rupture. Here the water environment

  17. Analysis of C H...O hydrogen bonds

    E-Print Network [OSTI]

    Babu, M. Madan

    1 Analysis of C H...O hydrogen bonds in high resolution protein crystal structures from the PDB 1.4 Identification of C-H...O hydrogen bonds............................................. 1.4.1 The definition of a C-H...O hydrogen bond.................................... 1.4.2 Fixing the hydrogen and measuring the parameters

  18. Article coated with flash bonded superhydrophobic particles

    DOE Patents [OSTI]

    Simpson, John T (Clinton, TN) [Clinton, TN; Blue, Craig A (Knoxville, TN) [Knoxville, TN; Kiggans, Jr., James O [Oak Ridge, TN

    2010-07-13T23:59:59.000Z

    A method of making article having a superhydrophobic surface includes: providing a solid body defining at least one surface; applying to the surface a plurality of diatomaceous earth particles and/or particles characterized by particle sizes ranging from at least 100 nm to about 10 .mu.m, the particles being further characterized by a plurality of nanopores, wherein at least some of the nanopores provide flow through porosity, the particles being further characterized by a plurality of spaced apart nanostructured features that include a contiguous, protrusive material; flash bonding the particles to the surface so that the particles are adherently bonded to the surface; and applying a hydrophobic coating layer to the surface and the particles so that the hydrophobic coating layer conforms to the nanostructured features.

  19. Anesthesia cutoff phenomenon: Interfacial hydrogen bonding

    SciTech Connect (OSTI)

    Chiou, J.S.; Ma, S.M.; Kamaya, H.; Ueda, I. (Univ. of Utah School of Medicine, Salt Lake City (USA))

    1990-05-04T23:59:59.000Z

    Anesthesia cutoff refers to the phenomenon of loss of anesthetic potency in a homologous series of alkanes and their derivatives when their sizes become too large. In this study, hydrogen bonding of 1-alkanol series (ethanol to eicosanol) to dipalmitoyl-L-alpha-phosphatidylcholine (DPPC) was studied by Fourier transform infrared spectroscopy (FTIR) in DPPC-D2O-in-CCl4 reversed micelles. The alkanols formed hydrogen bonds with the phosphate moiety of DPPC and released the DPPC-bound deuterated water, evidenced by increases in the bound O-H stretching signal of the alkanol-DPPC complex and also in the free O-D stretching band of unbound D2O. These effects increased according to the elongation of the carbon chain of 1-alkanols from ethanol (C2) to 1-decanol (C10), but suddenly almost disappeared at 1-tetradecanol (C14). Anesthetic potencies of these alkanols, estimated by the activity of brine shrimps, were linearly related to hydrogen bond-breaking activities below C10 and agreed with the FTIR data in the cutoff at C10.

  20. Microchannel cooling of face down bonded chips

    DOE Patents [OSTI]

    Bernhardt, Anthony F. (Berkeley, CA)

    1993-01-01T23:59:59.000Z

    Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multichip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

  1. Microchannel cooling of face down bonded chips

    DOE Patents [OSTI]

    Bernhardt, A.F.

    1993-06-08T23:59:59.000Z

    Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multi chip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

  2. Vacuum fusion bonding of glass plates

    DOE Patents [OSTI]

    Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  3. Vacuum fusion bonding of glass plates

    DOE Patents [OSTI]

    Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  4. Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch K. J. Gaffney, I. R. Piletic, and M. D. Fayer* Department measured with ultrafast infrared pump-probe experiments. Non-hydrogen-bond donating OD stretches (2690 cm-1

  5. 48.8 mW Multi-cell InP HBT Amplifier with on-wafer power combining at 220 GHz

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    @teledyne-si.com Abstract-- We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT-InP HBT, MMIC, Power amplifier, On-wafer power combining I. INTRODUCTION Solid-state Power Amplifiers associated with rain, humidity, and fog. To date, the highest reported output power for a solid state G

  6. An experimental investigation of silicon wafer surface roughness and its effect on the full strength of plated metals

    SciTech Connect (OSTI)

    Spiers, G.D.

    1981-01-01T23:59:59.000Z

    Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches were subjected to tensile pull strength tests. Electroless Ni/electroless Cu/electroplated Cu and electroless Ni/electroplated Cu were the two types of plate contacts tested. It was found that smoother surfaces had higher pull strength than rougher, chemically etched surfaces. The presence of the electroless Cu layer was found to be important to adhesion. The mode of fracture of the contact as it left the silicon was studied, and it was found that in almost all cases separation was due to fracture of the bulk silicon phase. The correlation between surface roughness and mode of contact failure is presented and interpreted.

  7. Method for bonding a transmission line to a downhole tool

    DOE Patents [OSTI]

    Hall, David R. (Provo, UT); Fox, Joe (Spanish Fork, UT)

    2007-11-06T23:59:59.000Z

    An apparatus for bonding a transmission line to the central bore of a downhole tool includes a pre-formed interface for bonding a transmission line to the inside diameter of a downhole tool. The pre-formed interface includes a first surface that substantially conforms to the outside contour of a transmission line and a second surface that substantially conforms to the inside diameter of a downhole tool. In another aspect of the invention, a method for bonding a transmission line to the inside diameter of a downhole tool includes positioning a transmission line near the inside wall of a downhole tool and placing a mold near the transmission line and the inside wall. The method further includes injecting a bonding material into the mold and curing the bonding material such that the bonding material bonds the transmission line to the inside wall.

  8. Identification and Characterization of Performance Limiting Regions in Poly-Si Wafers Used for PV Cells: Preprint

    SciTech Connect (OSTI)

    Guthrey, H.; Gorman, B.; Al-Jassim, M.

    2011-07-01T23:59:59.000Z

    As demand for silicon photovoltaic (PV) material increases, so does the need for cost-effective feedstock and production methods that will allow enhanced penetration of silicon PV into the total energy market. The focus on cost minimization for production of polycrystalline silicon (poly-Si) PV has led to relaxed feedstock purity requirements, which has also introduced undesirable characteristics into cast poly-Si PV wafers. To produce cells with the highest possible conversion efficiencies, it is crucial to understand how reduced purity requirements and defects that are introduced through the casting process can impair minority carrier properties in poly-Si PV cells. This is only possible by using multiple characterization techniques that give macro-scale information (such as the spatial distribution of performance-limiting regions), as well as micro and nano-scale information about the structural and chemical nature of such performance-limiting regions. This study demonstrates the usefulness of combining multiple techniques to analyze performance-limiting regions in the poly-Si wafers that are used for PV cells. This is done by first identifying performance-limiting regions using macro-scale techniques including photoluminescence (PL) imaging, microwave photoconductive decay (uPCD), and reflectometry), then using smaller-scale techniques such as scanning electron microscopy (SEM), electron backscattered diffraction (EBSD), laser ablation inductively coupled mass spectrometry (LA-ICP-MS), cathodoluminescence (CL), and transmission electron microscopy (TEM) to understand the nature of such regions. This analysis shows that structural defects as well as metallic impurities are present in performance-limiting regions, which together act to decrease conversion efficiencies in poly-Si PV cells.

  9. Partial-Transient-Liquid-Phase Bonding of Advanced Ceramics Using Surface-Modified Interlayers

    E-Print Network [OSTI]

    Reynolds, Thomas Bither

    2012-01-01T23:59:59.000Z

    Alumina Diffusion Bonding and Titanium Active Brazing."O 3 -Titanium Adhesion in the View of the Diffusion Bonding

  10. Technical Review Report for the Justification for Shipment of Sodium-Bonded Carbide Fuel Pins in the T-3 Cask

    SciTech Connect (OSTI)

    West, M; DiSabatino, A

    2008-01-04T23:59:59.000Z

    This report documents the review of the Fluor Submittal (hereafter, the Submittal), prepared by Savannah River Packaging Technology (SRPT) of Savannah River National Laboratory (SRNL), at the request of the Department of Energy's (DOE) Richland Operations Office, for the shipment of unirradiated and irradiated sodium-bonded carbide fuel pins. The sodium-bonded carbide fuel pins are currently stored at the Fast Flux Test Facility (FFTF) awaiting shipment to Idaho National Laboratory (INL). Normally, modified contents are included into the next revision of the SARP. However, the contents, identified to be shipped from FFTF to Idaho National Laboratory, are a one-way shipment of 18 irradiated fuel pins and 7 unirradiated fuel pins, where the irradiated and unirradiated fuel pins are shipped separately, and can be authorized with a letter amendment to the existing Certificate of Compliance (CoC).

  11. Bond selective chemistry beyond the adiabatic approximation

    SciTech Connect (OSTI)

    Butler, L.J. [Univ. of Chicago, IL (United States)

    1993-12-01T23:59:59.000Z

    One of the most important challenges in chemistry is to develop predictive ability for the branching between energetically allowed chemical reaction pathways. Such predictive capability, coupled with a fundamental understanding of the important molecular interactions, is essential to the development and utilization of new fuels and the design of efficient combustion processes. Existing transition state and exact quantum theories successfully predict the branching between available product channels for systems in which each reaction coordinate can be adequately described by different paths along a single adiabatic potential energy surface. In particular, unimolecular dissociation following thermal, infrared multiphoton, or overtone excitation in the ground state yields a branching between energetically allowed product channels which can be successfully predicted by the application of statistical theories, i.e. the weakest bond breaks. (The predictions are particularly good for competing reactions in which when there is no saddle point along the reaction coordinates, as in simple bond fission reactions.) The predicted lack of bond selectivity results from the assumption of rapid internal vibrational energy redistribution and the implicit use of a single adiabatic Born-Oppenheimer potential energy surface for the reaction. However, the adiabatic approximation is not valid for the reaction of a wide variety of energetic materials and organic fuels; coupling between the electronic states of the reacting species play a a key role in determining the selectivity of the chemical reactions induced. The work described below investigated the central role played by coupling between electronic states in polyatomic molecules in determining the selective branching between energetically allowed fragmentation pathways in two key systems.

  12. Repairable chip bonding/interconnect process

    DOE Patents [OSTI]

    Bernhardt, Anthony F. (Berkeley, CA); Contolini, Robert J. (Livermore, CA); Malba, Vincent (Livermore, CA); Riddle, Robert A. (Tracy, CA)

    1997-01-01T23:59:59.000Z

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

  13. Repairable chip bonding/interconnect process

    DOE Patents [OSTI]

    Bernhardt, A.F.; Contolini, R.J.; Malba, V.; Riddle, R.A.

    1997-08-05T23:59:59.000Z

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules is disclosed. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder. 10 figs.

  14. Qualified Energy Conservation Bond (QECB) Update: New

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of ContaminationHubs+18, 2012 Qualified Energy Conservation Bond (QECB) Update: New

  15. Globalization Nationalized

    E-Print Network [OSTI]

    Mazlish, Bruce

    Globalism and globalization have been seen as competitors to other allegiances, namely regionalism and nationalism. A look at recent efforts at reconceptualizing global history in China, Korea and the U.S., however, suggests ...

  16. Chemically bonded phospho-silicate ceramics

    DOE Patents [OSTI]

    Wagh, Arun S. (Orland Park, IL); Jeong, Seung Y. (Westmont, IL); Lohan, Dirk (Chicago, IL); Elizabeth, Anne (Chicago, IL)

    2003-01-01T23:59:59.000Z

    A chemically bonded phospho-silicate ceramic formed by chemically reacting a monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and a sparsely soluble oxide, with a sparsely soluble silicate in an aqueous solution. The monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and sparsely soluble oxide are both in powder form and combined in a stochiometric molar ratio range of (0.5-1.5):1 to form a binder powder. Similarly, the sparsely soluble silicate is also in powder form and mixed with the binder powder to form a mixture. Water is added to the mixture to form a slurry. The water comprises 50% by weight of the powder mixture in said slurry. The slurry is allowed to harden. The resulting chemically bonded phospho-silicate ceramic exhibits high flexural strength, high compression strength, low porosity and permeability to water, has a definable and bio-compatible chemical composition, and is readily and easily colored to almost any desired shade or hue.

  17. Department of Biomedical Engineering BME 479: BioMEMS: Introduction to Microfabrication

    E-Print Network [OSTI]

    Bieber, Michael

    , oxidation, diffusion, ion implantation, and wafer bonding will be discussed for various materials orientation and doping. Lecture 8. Ion implantation and diffusion. Simulation of implantation and diffusion. Ohmic contacts. Lecture 12. Bonding of silicon wafers. Fusion bonding. Anodic bonding. Thermocompression

  18. Nondestructive inspection of bonded composite doublers for aircraft

    SciTech Connect (OSTI)

    Roach, D.; Moore, D.; Walkington, P.

    1996-12-31T23:59:59.000Z

    One major thrust in FAA`s National Aging Aircraft Research Program is to foster new technologies in civil aircraft maintenance. Recent DOD and other government developments in using bonded composite doublers on metal structures support the need for validation of such doubler applications on US certificated airplanes. In this study, a specific composite application was chosen on an L-1011 aircraft. Primary inspection requirements for these doublers include identifying disbonds between composite laminate and aluminum parent material, and delaminations in the composite laminate. Surveillance of cracks or corrosion in the parent aluminum material beneath the double is also a concern. No single NDI method can inspect for every flaw type, therefore we need to know NDI capabilities and limitations. This paper reports on a series of NDI tests conducted on laboratory test structures and on a fuselage section from a retired L-1011. Application of ultrasonics, x-ray, and eddy current to composite doublers and results from test specimens loaded to provide a changing flaw profile, are presented in this paper. Development of appropriate inspection calibration standards are also discussed.

  19. Developing A Laser Shockwave Model For Characterizing Diffusion Bonded Interfaces

    SciTech Connect (OSTI)

    James A. Smith; Jeffrey M. Lacy; Barry H. Rabin

    2014-07-01T23:59:59.000Z

    12. Other advances in QNDE and related topics: Preferred Session Laser-ultrasonics Developing A Laser Shockwave Model For Characterizing Diffusion Bonded Interfaces 41st Annual Review of Progress in Quantitative Nondestructive Evaluation Conference QNDE Conference July 20-25, 2014 Boise Centre 850 West Front Street Boise, Idaho 83702 James A. Smith, Jeffrey M. Lacy, Barry H. Rabin, Idaho National Laboratory, Idaho Falls, ID ABSTRACT: The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) which is assigned with reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU. The new LEU fuel is based on a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to complete the fuel qualification process, the laser shock technique is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. The Laser Shockwave Technique (LST) is being investigated to characterize interface strength in fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However the deposition of laser energy into the containment layer on specimen’s surface is intractably complex. The shock wave energy is inferred from the velocity on the backside and the depth of the impression left on the surface from the high pressure plasma pulse created by the shock laser. To help quantify the stresses and strengths at the interface, a finite element model is being developed and validated by comparing numerical and experimental results for back face velocities and front face depressions with experimental results. This paper will report on initial efforts to develop a finite element model for laser shock.

  20. Using Qualified Energy Conservation Bonds for Public Building...

    Broader source: Energy.gov (indexed) [DOE]

    Summarizes how the City of Philadelphia leveraged 6.25 million in qualified energy conservation bonds to upgrade the energy efficiency of city buildings. Author: Lawrence Berkeley...

  1. Qualified Energy Conservation Bonds (QECBs) APPENDIX A: QECB...

    Broader source: Energy.gov (indexed) [DOE]

    Qualified energy conservation bonds appendices. Author: U. S. Department of Energy Appendix A: QECB Counsel, Underwriters, Banks and Trustees More Documents & Publications...

  2. Qualified Energy Conservation Bond Webinars | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    listing of past qualified energy conservation bond webinars and associated files. Author: U.S. Department of Energy Qualified Energy Conservation Webinars Website More Documents &...

  3. Energetics of Hydrogen Bond Network Rearrangements in Liquid...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly...

  4. Competition between Covalent and Noncovalent Bond Cleavages in...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    localized and mainly affected by the identity of the phosphorylated side chain. The hydrogen bonding in the peptide and ligand properties play a minor role in determining the...

  5. Surface Modification by Atmospheric Pressure Plasma for Improved Bonding

    E-Print Network [OSTI]

    Williams, Thomas Scott

    2013-01-01T23:59:59.000Z

    steel type 410, and aluminum alloy 2024. Helium and oxygensteel type 410, and aluminum alloy 2024 was demonstratedAdhesive Bonding of Aluminum Alloys, Metal Finishing, 13.

  6. Atomistic modeling of amorphous silicon carbide using a bond...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    there is partial recovery of shortrange order. Citation: Devanathan R, F Gao, and WJ Weber.2007."Atomistic modeling of amorphous silicon carbide using a bond-order...

  7. Clean Renewable Energy Bonds (CREBs) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    different rules than prior CREB allocations authorized under 26 USC 54. ''''' Clean renewable energy bonds (CREBs) may be used by certain entities -- primarily in the public...

  8. Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN. Citation: Shokri A, Y Wang, GA...

  9. Effects of atmospheres on bonding characteristics of silver and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    temperature. To investigate the effects of atmospheres on the bonding characteristics of ceramic joints brazed with Ag-CuO braze filler metals, alumina joints prepared using a...

  10. Torsion Testing of Diffusion Bonded LIGA Formed Nickel

    SciTech Connect (OSTI)

    Buchheit, T.E.; Christenson, T.R.; Schmale, D.T.

    1999-01-27T23:59:59.000Z

    A test technique has been devised which is suitable for the testing of the bond strength of batch diffusion bonded LIGA or DXRL defined structures. The method uses a torsion tester constructed with the aid of LIGA fabrication and distributed torsion specimens which also make use of the high aspect ratio nature of DXRL based processing. Measurements reveal achieved bond strengths of 130MPa between electroplated nickel with a bond temperature of 450 C at 7 ksi pressure which is a sufficiently low temperature to avoid mechanical strength degradation.

  11. FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SECURITY Energy Northwest (ENW) bonds are secured by payments from the Bonneville Power Administration (Bonneville). Bonneville's payment to ENW is made as an operating...

  12. adhesively bonded shell: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    various conditions, including the type of surface preparation, pH of the environmental media, (more) Xu, Dingying 2004-01-01 2 Bond Characteristics and Qualifications of...

  13. Sandia National Laboratories: Nuclear Energy Systems Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  14. Sandia National Laboratories: Advanced Nuclear Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  15. Sandia National Laboratories: S-CO2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  16. Sandia National Laboratories: Supercritical Carbon Dioxide Brayton...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  17. Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt

    E-Print Network [OSTI]

    Reisslein, Martin

    ABSTRACT Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt

  18. On the reliability of nanoindentation hardness of Al{sub 2}O{sub 3} films grown on Si-wafer by atomic layer deposition

    SciTech Connect (OSTI)

    Liu, Xuwen, E-mail: xuwen.liu@aalto.fi; Haimi, Eero; Hannula, Simo-Pekka [Department of Materials Science and Engineering, Aalto University School of Chemical Technology, Vuorimiehentie 2A, FI-00076 Espoo (Finland); Ylivaara, Oili M. E.; Puurunen, Riikka L. [VTT Technical Research Centre of Finland, Tietotie 3, FI-02044 Espoo (Finland)

    2014-01-15T23:59:59.000Z

    The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al{sub 2}O{sub 3} films having thickness varying from 10 to 600?nm were deposited on a single-side polished silicon wafer at 300?°C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8?nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20?nm and the nanoindentation hardness is about 11?GPa independent of film thickness.

  19. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23T23:59:59.000Z

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  20. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, Richard M. (Tijeras, NM); Tuthill, Clinton D. (Edgewood, NM); Watkins, Randall D. (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

  1. Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures

    SciTech Connect (OSTI)

    Kruse, J.; Schweinfurth, R.A.; Gao, F.; Scherrer, D.; Barlage, D.; Platt, C.E.; Van Harlingen, D.J.; Feng, M. [Univ. of Illinois, Urbana, IL (United States)

    1994-12-31T23:59:59.000Z

    This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25{mu}m gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.

  2. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy

    SciTech Connect (OSTI)

    Lai, Y. W.; Ludwig, A. [Institute for Materials, Chair for Materials for Microsystems, Ruhr-Universitaet Bochum, 44780 Bochum (Germany); Materials Research Department, Ruhr-Universitaet Bochum, 44780 Bochum (Germany); Hamann, S.; Ehmann, M. [Institute for Materials, Chair for Materials for Microsystems, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

    2011-06-15T23:59:59.000Z

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  3. National Nuclear Security Administration | National Nuclear Security...

    National Nuclear Security Administration (NNSA)

    National Nuclear Security Administration | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing...

  4. Office of National Infrastructure & Sustainability | National...

    National Nuclear Security Administration (NNSA)

    National Infrastructure & Sustainability | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing...

  5. Pantex receives National Weather Service recognition | National...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    receives National Weather Service recognition | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing...

  6. Quantum Finance Hamiltonian for Coupon Bond European and Barrier Options

    E-Print Network [OSTI]

    Chaudhuri, Sanjay

    Quantum Finance Hamiltonian for Coupon Bond European and Barrier Options Belal E. Baaquie RMI are financial derivatives that can be analyzed in the Hamiltonian formulation of quantum finance. Forward-2963 Fax: (65) 6777-6126 Email: phybeb@nus.edu.sg #12;Quantum Finance Hamiltonian for Coupon Bond European

  7. July 18, 2012 Qualified Energy Conservation Bond (QECB) Update: New

    E-Print Network [OSTI]

    July 18, 2012 Qualified Energy Conservation Bond (QECB) Update: New Guidance from the U.S. Department of Treasury and the Internal Revenue Service Qualified Energy Conservation Bonds (QECBs a range of energy conservation projects at very attractive borrowing rates over long contract terms

  8. BOND PROPERTIES OF CFCC PRESTRESSING STRANDS IN PRETENSIONED CONCRETE BEAMS

    E-Print Network [OSTI]

    BOND PROPERTIES OF CFCC PRESTRESSING STRANDS IN PRETENSIONED CONCRETE BEAMS by Nolan G. Domenico plastic prestressing strands (CFCC) in pretensioned concrete beams. The bond characteristics are examined for 15.2 mm diameter and 12.5 mm diameter seven-wire CFCC strands. Ten prestressed concrete beams

  9. Time- and temperature-dependent failures of a bonded joint

    SciTech Connect (OSTI)

    Sihn, Sangwook; Miyano, Yasushi; Tsai, S.W. [Stanford Univ., Palo Alto, CA (United States)

    1997-07-01T23:59:59.000Z

    Time and temperature dependent properties of a tubular lap bonded joint are reported. The joint bonds a cast iron rod and a composite pipe together with an epoxy type of an adhesive material containing chopped glass fiber. A new fabrication method is proposed.

  10. Proton Transfer and Hydrogen Bonding in Chemical and Biological

    E-Print Network [OSTI]

    Amrhein, Valentin

    Proton Transfer and Hydrogen Bonding in Chemical and Biological Systems: A Force Field Approach and support. i #12;ii #12;Abstract Proton transfer and hydrogen bonds are fundamental for the function be regarded as incipient proton transfer reactions, so theoretically they can be de- scribed in unitary way

  11. Diffusion Bonding Aluminium Alloys and Composites: New Approaches and Modelling

    E-Print Network [OSTI]

    Cambridge, University of

    Diffusion Bonding Aluminium Alloys and Composites: New Approaches and Modelling Amir A. Shirzadi for advanced aluminium alloys and composites will enable them to be more widely used. The aim of this Ph of the research, two new methods for TLP diffusion bonding of aluminium-based composites (aluminium alloys

  12. Electrically conductive resinous bond and method of manufacture

    DOE Patents [OSTI]

    Snowden, Jr., Thomas M. (P.O. Box 4231, Clearwater, FL 33518); Wells, Barbara J. (865 N. Village Dr., Apt. 101B, St. Petersburg, FL 33702)

    1987-01-01T23:59:59.000Z

    A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40.degree. to 365.degree. C. to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

  13. Electrically conductive resinous bond and method of manufacture

    DOE Patents [OSTI]

    Snowden, T.M. Jr.; Wells, B.J.

    1985-01-01T23:59:59.000Z

    A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40 to 365/sup 0/C to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

  14. Final Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel

    SciTech Connect (OSTI)

    N /A

    2000-08-04T23:59:59.000Z

    DOE is responsible for the safe and efficient management of its sodium-bonded spent nuclear fuel. This fuel contains metallic sodium, a highly reactive material; metallic uranium, which is also reactive; and in some cases, highly enriched uranium. The presence of reactive materials could complicate the process of qualifying and licensing DOE's sodium-bonded spent nuclear fuel inventory for disposal in a geologic repository. Currently, more than 98 percent of this inventory is located at the Idaho National Engineering and Environmental Laboratory (INEEL), near Idaho Falls, Idaho. In addition, in a 1995 agreement with the State of Idaho, DOE committed to remove all spent nuclear fuel from Idaho by 2035. This EIS evaluates the potential environmental impacts associated with the treatment and management of sodium-bonded spent nuclear fuel in one or more facilities located at Argonne National Laboratory-West (ANL-W) at INEEL and either the F-Canyon or Building 105-L at the Savannah River Site (SRS) near Aiken, South Carolina. DOE has identified and assessed six proposed action alternatives in this EIS. These are: (1) electrometallurgical treatment of all fuel at ANL-W, (2) direct disposal of blanket fuel in high-integrity cans with the sodium removed at ANL-W, (3) plutonium-uranium extraction (PUREX) processing of blanket fuel at SRS, (4) melt and dilute processing of blanket fuel at ANL-W, (5) melt and dilute processing of blanket fuel at SRS, and (6) melt and dilute processing of all fuel at ANL-W. In addition, Alternatives 2 through 5 include the electrometallurgical treatment of driver fuel at ANL-W. Under the No Action Alternative, the EIS evaluates both the continued storage of sodium-bonded spent nuclear fuel until the development of a new treatment technology or direct disposal without treatment. Under all of the alternatives, the affected environment is primarily within 80 kilometers (50 miles) of spent nuclear fuel treatment facilities. Analyses indicate little difference in the environmental impacts among alternatives. DOE has identified electrometallurgical treatment as its Preferred Alternative for the treatment and management of all sodium-bonded spent nuclear fuel, except for the Fermi-1 blanket fuel. The No Action Alternative is preferred for the Fermi-1 blanket spent nuclear fuel.

  15. Clean renewable energy bonds (CREBs) present a low-cost opportunity for public entities to issue bonds to finance

    E-Print Network [OSTI]

    Clean renewable energy bonds (CREBs) present a low-cost opportunity for public entities to issue bonds to finance renewable energy projects. The federal government lowers the cost of debt by providing created under the Energy Tax Incentives Act of 2005 (and detailed in Internal Revenue Code Section 54

  16. Theoretical Electron Density Distributions for Fe-and Cu-Sulfide Earth Materials: A Connection between Bond Length, Bond Critical Point Properties, Local Energy Densities,

    E-Print Network [OSTI]

    Downs, Robert T.

    , Biomolecular and Chemical Sciences, UniVersity of Western Australia, Australia ReceiVed: August 7, 2006 between Bond Length, Bond Critical Point Properties, Local Energy Densities, and Bonded Interactions G. V; In Final Form: December 6, 2006 Bond critical point and local energy density properties together with net

  17. Transient-Liquid-Phase (TLP) Bonding of Al2O3 Using Nb-based Multilayer Interlayers

    E-Print Network [OSTI]

    Hong, Sung Moo

    2009-01-01T23:59:59.000Z

    Alumina Diffusion Bonding and Titanium Active Brazing.Requirements for Diffusion Bonding Titanium. In: Jaffee RI,O 3 -Titanium Adhesion in the View of the Diffusion Bonding

  18. Transient-Liquid-Phase (TLP) Bonding of Al2O3 Using Nb-based Multilayer Interlayers

    E-Print Network [OSTI]

    Hong, Sung Moo

    2009-01-01T23:59:59.000Z

    p. 539-44. Derby B. Diffusion Bonding. In: Nicholas M (ed).Requirements for Diffusion Bonding Titanium. In: Jaffee RI,Contact During Diffusion Bonding. Metallurgical Transactions

  19. National Competitiveness

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch > The EnergyCenterDioxide CaptureSee theOilNRELTechnologies

  20. National Security

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch > The EnergyCenterDioxide CaptureSeeNUCLEAR SCIENCE WEEKSecurity LLNL's

  1. NATIONAL LABORATORY

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem Not Found Item Not Found TheHot electron dynamicsAspen Aerogels,AluminumApproved for

  2. NATIONAL LABORATORY

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently Asked QuestionsDepartment of Energy 3Services and LowersSafety andNASAand North

  3. Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional Vibrational Stimulated Echoes

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional, USA (Received 24 February 2003; published 3 December 2003) Hydrogen bond dynamics are explicated hydrogen bonded network are measured with ultrashort (

  4. Metal-and hydrogen-bonding competition during water absorption on Pd(111) and Ru(0001)

    E-Print Network [OSTI]

    Tatarkhanov, Mouslim

    2010-01-01T23:59:59.000Z

    Metal- and hydrogen-bonding competition during waterwith the greater degree of hydrogen-bonded network formationH and OH to maximize both hydrogen bonding and oxygen-metal

  5. An Investigation of Bonding Mechanism in Metal Cladding by Warm Rolling

    E-Print Network [OSTI]

    Yang, Wei

    2012-02-14T23:59:59.000Z

    , this research presents a bonding mechanism for the roll cladding process of dissimilar metals. The roll bonding model can help optimize rolling parameters for varying bonding strength depending on the demands of the application. It can also provide insights...

  6. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution

  7. Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen Bonds and An Alternative to the Low Barrier Hydrogen-Bond Proposal

    SciTech Connect (OSTI)

    Shokri, Alireza; Wang, Yanping; O'Doherty, George A.; Wang, Xue B.; Kass, Steven R.

    2013-11-27T23:59:59.000Z

    We report quantifying the strengths of different types of hydrogen bonds in hydrogen bond networks (HBNs) via measurement of the adiabatic electron detachment energy of the conjugate base of a small covalent polyol model compound (i.e., (HOCH2CH2CH(OH)CH2)2CHOH) in the gas phase and the pKa of the corresponding acid in DMSO. The latter result reveals that the hydrogen bonds to the charged center and those that are one solvation shell further away (i.e., primary and secondary) provide 5.3 and 2.5 pKa units of stabilization per hydrogen bond in DMSO. Computations indicate that these energies increase to 8.4 and 3.9 pKa units in benzene and that the total stabilizations are 16 (DMSO) and 25 (benzene) pKa units. Calculations on a larger linear heptaol (i.e., (HOCH2CH2CH(OH)CH2CH(OH)CH2)2CHOH) reveal that the terminal hydroxyl groups each contribute 0.6 pKa units of stabilization in DMSO and 1.1 pKa units in benzene. All of these results taken together indicate that the presence of a charged center can provide a powerful energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN.

  8. E-Print Network 3.0 - amide bonds stabilize Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amide-Amide and Amide-Water Hydrogen Bonds Summary: Bonds: Implicationsfor Protein Folding and Stability Eric S.Eberhardt and Ronald T. Rained Department... folds, many of...

  9. The Role of Non-Bonded Interactions in the Conformational Dynamics...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Non-Bonded Interactions in the Conformational Dynamics of Organophosphorous Hydrolase Adsorbed onto Functionalized The Role of Non-Bonded Interactions in the Conformational...

  10. 3-D INTEGRATION USING WAFER BONDING J.-Q. L *, A. KUMAR *, Y. KWON *, E.T. EISENBRAUN **, R.P. KRAFT *, J.F. McDONALD *, R.J.

    E-Print Network [OSTI]

    Salama, Khaled

    . McDonald et al. studied via holes formed by laser drilling, etching, Cu sputtering, and Au plating

  11. Influence of chain topology and bond potential on the glass transition of polymer chains simulated with the bond fluctuation model

    E-Print Network [OSTI]

    Juan J. Freire

    2006-12-20T23:59:59.000Z

    The bond fluctuation model with a bond potential has been applied to investigation of the glass transition of linear chains and chains with a regular disposition of small branches. Cooling and subsequent heating curves are obtained for the chain energies and also for the mean acceptance probability of a bead jump. In order to mimic different trends to vitrification, a factor B gauging the strength of the bond potential with respect to the long-range potential (i.e. the intramolecular or intermolecular potential between indirectly bonded beads) has been introduced. (A higher value of B leads to a preference for the highest bond lengths and a higher total energy, implying a greater tendency to vitrify.) Different cases have been considered for linear chains: no long-range potential, no bond potential and several choices for B. Furthermore, we have considered two distinct values of B for alternate bonds in linear chains. In the case of the branched chains, molecules with different values of B for bonds in the main chain and in the branches have also been investigated. The possible presence of crystallization has been characterized by calculating the collective light scattering function of the different samples after annealing at a convenient temperature below the onset of crystallization. It is concluded that crystallization is inherited more efficiently in the systems with branched chains and also for higher values of B. The branched molecules with the highest B values in the main chain bonds exhibit two distinct transitions in the heating curves which may be associated with two glass transitions. This behavior has been detected experimentally for chains with relatively long flexible branches.

  12. Semi-flexible hydrogen-bonded and non-hydrogen bonded lattice polymers

    E-Print Network [OSTI]

    J Krawczyk; AL Owczarek; T Prellberg

    2008-07-06T23:59:59.000Z

    We investigate the addition of stiffness to the lattice model of hydrogen-bonded polymers in two and three dimensions. We find that, in contrast to polymers that interact via a homogeneous short-range interaction, the collapse transition is unchanged by any amount of stiffness: this supports the physical argument that hydrogen bonding already introduces an effective stiffness. Contrary to possible physical arguments, favouring bends in the polymer does not return the model's behaviour to that comparable to the semi-flexible homogeneous interaction model, where the canonical $\\theta$-point occurs for a range of parameter values. In fact, for sufficiently large bending energies the crystal phase disappears altogether, and no phase transition of any type occurs. We also compare the order-disorder transition from the globule phase to crystalline phase in the semi-flexible homogeneous interaction model to that for the fully-flexible hybrid model with both hydrogen and non-hydrogen like interactions. We show that these phase transitions are of the same type and are a novel polymer critical phenomena in two dimensions. That is, it is confirmed that in two dimensions this transition is second-order, unlike in three dimensions where it is known to be first order. We also estimate the crossover exponent and show that there is a divergent specific heat, finding $\\phi=0.7(1)$ or equivalently $\\alpha=0.6(2)$. This is therefore different from the $\\theta$ transition, for which $\\alpha=-1/3$.

  13. FITCH RATES PORT OF MORROW (OR) TRANSMISSION FACILITIES REV BONDS...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FITCH RATES PORT OF MORROW (OR) TRANSMISSION FACILITIES REV BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-24 November 2014: Fitch Ratings assigns 'AA' ratings to the Port of...

  14. Mpemba paradox: Hydrogen bond memory and water-skin supersolidity

    E-Print Network [OSTI]

    Chang Q Sun

    2015-01-05T23:59:59.000Z

    Numerical reproduction of measurements, experimental evidence for skin super-solidity and hydrogen-bond memory clarified that Mpemba paradox integrates the heat emission-conduction-dissipation dynamics in the source-path-drain cycle system.

  15. aliphatic ch bonds: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2015-01-01 39 H-atom high-n Rydberg time-of-flight spectroscopy of CH bond fission in acrolein dissociated at 193 nm Chemistry Websites Summary: H-atom high-n Rydberg...

  16. Bond Angle Torsion http://www.nobelprize.org/

    E-Print Network [OSTI]

    Fukai, Tomoki

    MARBLE-K 20141024 1 #12;2 MARBLE MARBLE #12;MD Bond Angle Torsion http) MARBLE-K PME CHARMM Force Field AMBER Force Field NMRSAXS molx XNMR #12;MARBLE

  17. Mechanistic Examination of C?-C? Bond Cleavages of Tryptophan...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (X C, S, L, F, Y, Q) species. The C?–C? bond cleavage of a C-terminal decarboxylated tryptophan residue (M - CO2•+) can generate M - CO2 - 116+,...

  18. Creep effects in diffusion bonding of oxygen-free copper

    E-Print Network [OSTI]

    Moilanen, Antti

    Diffusion is the transport of atoms or particles through the surrounding material. Various microstructural changes in metals are based on the diffusion phenomena. In solid metals the diffusion is closely related to crystallographic defects. In single-component metals the dominant mechanism of diffusion is the vacancy mechanism. Diffusion bonding is a direct technological application of diffusion. It is an advanced solidstate joining process in which the surfaces of two components are brought to contact with each other and heated under a pressing load in a controlled environment. During the process, the contact surfaces are bonded by atomic diffusion across the interface and as a result, one solid piece is formed. The condition of high temperature and low applied stress combined with relatively long process duration enables the creep effects to take place in bonded metals. Furthermore, creep causes unwanted permanent deformations in the bonded components. Some authors suggest that there could be a threshold fo...

  19. Spectroscopic investigations of hydrogen bond dynamics in liquid water

    E-Print Network [OSTI]

    Fecko, Christopher J., 1975-

    2004-01-01T23:59:59.000Z

    Many of the remarkable physical and chemical properties of liquid water are due to the strong influence hydrogen bonds have on its microscopic dynamics. However, because of the fast timescales involved, there are relatively ...

  20. Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids

    SciTech Connect (OSTI)

    Marshall, Bennett D., E-mail: bennettd1980@gmail.com; Chapman, Walter G. [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)] [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)

    2013-12-07T23:59:59.000Z

    We develop a resummed thermodynamic perturbation theory for bond cooperativity in associating fluids by extension of Wertheim's multi-density formalism. We specifically consider the case of an associating hard sphere with two association sites and both pairwise and triplet contributions to the energy, such that the first bond in an associated cluster receives an energy ??{sup (1)} and each subsequent bond in the cluster receives an energy ??{sup (2)}. To test the theory we perform new Monte Carlo simulations for potentials of this type. Theory and simulation are found to be in excellent agreement. We show that decreasing the energetic benefit of hydrogen bonding can actually result in a decrease in internal energy in the fluid. We also predict that when ?{sup (1)} = 0 and ?{sup (2)} is nonzero there is a transition temperature where the system transitions from a fluid of monomers to a mixture of monomers and very long chains.

  1. Ultrafast structural fluctuations and rearrangements of water's hydrogen bonded network

    E-Print Network [OSTI]

    Loparo, Joseph J. (Joseph John)

    2007-01-01T23:59:59.000Z

    Aqueous chemistry is strongly influenced by water's ability to form an extended network of hydrogen bonds. It is the fluctuations and rearrangements of this network that stabilize reaction products and drive the transport ...

  2. National System Templates: Building Sustainable National Inventory...

    Open Energy Info (EERE)

    Templates: Building Sustainable National Inventory Management Systems Jump to: navigation, search Tool Summary LAUNCH TOOL Name: National System Templates: Building Sustainable...

  3. Facilities | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Some of the nation's most powerful and sophisticated facilities for energy research Argonne National Laboratory is home to some of the nation's most powerful and sophisticated...

  4. Microbial cleavage of organic C-S bonds

    DOE Patents [OSTI]

    Kilbane, J.J. II.

    1994-10-25T23:59:59.000Z

    A microbial process is described for selective cleavage of organic C-S bonds which may be used for reducing the sulfur content of sulfur-containing organic carbonaceous materials. Microorganisms of Rhodococcus rhodochrous and Bacillus sphaericus have been found which have the ability of selective cleavage of organic C-S bonds. Particularly preferred microorganisms are Rhodococcus rhodochrous strain ATCC 53968 and Bacillus sphaericus strain ATCC 53969 and their derivatives.

  5. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site OfficeCourse Clusters Course ClustersCovalent

  6. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site OfficeCourse Clusters Course

  7. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution AndControllingCoolCorrectiveCostsXCovalent

  8. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution AndControllingCoolCorrectiveCostsXCovalentCovalent

  9. Public Bonding Options | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014, an OHASeptember 2010 |ofDepartment of EnergyDriveTraditionally,

  10. Qualified Energy Conservation Bonds | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014, an OHASeptember 2010In addition to analysis3 News7:ThomasA Qualified

  11. Bonded Compliant Seal (BCS) - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced Materials Find FindRewind Generator| Princeton

  12. INFORMATION REGARDING PERFORMANCE AND PAYMENT BONDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh School footballHydrogen andHypernuclei in HallLeo282 AprilLet's

  13. Bonded Bracket Assmebly for Frameless Solar Panels

    SciTech Connect (OSTI)

    Murray, Todd

    2013-01-30T23:59:59.000Z

    In February 2011 the US Department of Energy announced their new Sunshot Initiative. The Sunshot goal is to reduce the total cost of solar energy systems by about 75 percent before the end of the decade. The DOE estimated that a total installed cost of $1 per watt for photovoltaic systems would be equivalent to 6���¢/kilowatt hour (kWh) for energy available from the grid. The DOE also estimated that to meet the $1 per watt goal, PV module costs would need to be reduced to $.50 per watt, balance of systems costs would need to be reduced to $.40 per watt, and power electronic costs would need to reach $.10 per watt. To address the BOS balance of systems cost component of the $1 per watt goal, the DOE announced a funding opportunity called (BOS-X) Extreme Balance of System Hardware Cost Reductions. The DOE identified eight areas within the total BOS costs: 1) installation labor, 2) installation materials, 3) installation overhead and profit, 4) tracker, 5) permitting and commissioning, 6) site preparation, 7) land acquisition, 8) sales tax. The BOS-X funding announcement requested applications in four specific topics: Topic 1: Transformational Building Integrated Photovoltaic (BIPV) Modules Topic 2: Roof and Ground Mount Innovations Topic 3: Transformational Photovoltaic System Designs Topic 4: Development of New Wind Load Codes for PV Systems The application submitted by ARaymond Tinnerman reflected the requirements listed in Topic #2, Roof and Ground Mount Innovations. The goal of topic #2 was to develop technologies that would result in the extreme reduction of material and labor costs associated with applications that require physical connections and attachments to roof and ground mount structures. The topics researched in this project included component cost reduction, labor reduction, weight reduction, wiring innovations, and alternative material utilization. The project objectives included: 1) The development of an innovative quick snap bracket assembly that would be bonded to frameless PV modules for commercial rooftop installations. 2) The development of a composite pultruded rail to replace traditional racking materials. 3) In partnership with a roofing company, pilot the certification of a commercial roof to be solar panel compliant, eliminating the need for structural analysis and government oversight resulting in significantly decreased permitting costs. 4) Reduce the sum of all cost impacts in topic #2 from a baseline total of $2.05/watt to $.34/watt.

  14. Mercury stabilization in chemically bonded phosphate ceramics

    SciTech Connect (OSTI)

    Wagh, A. S.; Singh, D.; Jeong, S. Y.

    2000-04-04T23:59:59.000Z

    Mercury stabilization and solidification is a significant challenge for conventional stabilization technologies. This is because of the stringent regulatory limits on leaching of its stabilized products. In a conventional cement stabilization process, Hg is converted at high pH to its hydroxide, which is not a very insoluble compound; hence the preferred route for Hg sulfidation to convert it into insoluble cinnabar (HgS). Unfortunately, efficient formation of this compound is pH-dependent. At a high pH, one obtains a more soluble Hg sulfate, in a very low pH range, insufficient immobilization occurs because of the escape of hydrogen sulfide, while efficient formation of HgS occurs only in a moderately acidic region. Thus, the pH range of 4 to 8 is where stabilization with Chemically Bonded Phosphate Ceramics (CBPC) is carried out. This paper discusses the authors experience on bench-scale stabilization of various US Department of Energy (DOE) waste streams containing Hg in the CBPC process. This process was developed to treat DOE's mixed waste streams. It is a room-temperature-setting process based on an acid-base reaction between magnesium oxide and monopotassium phosphate solution that forms a dense ceramic within hours. For Hg stabilization, addition of a small amount (< 1 wt.%) of Na{sub 2}S or K{sub 2}S is sufficient in the binder composition. Here the Toxicity Characteristic Leaching Procedure (TCLP) results on CBPC waste forms of surrogate waste streams representing secondary Hg containing wastes such as combustion residues and Delphi DETOX{trademark} residues are presented. The results show that although the current limit on leaching of Hg is 0.2 mg/L, the results from the CBPC waste forms are at least one order lower than this stringent limit. Encouraged by these results on surrogate wastes, they treated actual low-level Hg-containing mixed waste from their facility at Idaho. TCLP results on this waste are presented here. The efficient stabilization in all these cases is attributed to chemical immobilization as both a sulfide (cinnabar) and a phosphate, followed by its physical encapsulation in a dense matrix of the ceramic.

  15. Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical Exchange Spectroscopy

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical ExchangeVed: January 12, 2010 Hydrogen-bonded complexes between phenol and phenylacetylene are studied using ultrafast hydrogen bonding acceptor sites (phenyl or acetylene) that compete for hydrogen bond donors in solution

  16. Thermal Performance and Reliability of Bonded Interfaces for Power Electronics Packaging Applications (Presentation)

    SciTech Connect (OSTI)

    Devoto, D.

    2013-07-01T23:59:59.000Z

    This presentation discusses the thermal performance and reliability of bonded interfaces for power electronics packaging applications.

  17. The C OH O hydrogen bond: A determinant of stability and specificity

    E-Print Network [OSTI]

    Senes, Alessandro

    recovered by hydro- gen bond formation, so hydrogen bonds provide a small or even unfavorable net energy hydro- gen bond has been unclear and its interaction energy has been believed to be small. Recently that apparent carbon hydro- gen bonds cluster frequently at glycine-, serine-, and threonine-rich packing

  18. Mechanical Study of Copper Bonded at Low Temperature using Spark Plasma Sintering Process

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    is approximatively 6.47 MPa [7]. J. W. Elmer & al [8] have presented a diffusion bonding of high purity copper using a conventional furnace. A series of diffusion bonds was done to determine the relationship between bond strengthMechanical Study of Copper Bonded at Low Temperature using Spark Plasma Sintering Process Bassem

  19. A new hydrogen-bonding potential for the design of proteinRNA interactions predicts specific

    E-Print Network [OSTI]

    Baker, David

    A new hydrogen-bonding potential for the design of protein­RNA interactions predicts specific-dependent hydrogen-bonding potential based on the statistical analysis of hydrogen-bonding geometries of hydrogen-bonding atom pairs at protein­ nucleic acid interfaces. A scoring function based on the hydrogen

  20. Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

    SciTech Connect (OSTI)

    Tai, Rui; Wang, Chinhua, E-mail: chinhua.wang@suda.edu.cn; Hu, Jingpei [Institute of Modern Optical Technologies and Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Lab of Advanced Optical Manufacturing Technologies and MOE Key Lab of Modern Optical Technologies, Soochow University, Suzhou 215006 (China); Mandelis, Andreas [Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario M5S 3G8 (Canada)

    2014-07-21T23:59:59.000Z

    A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (?MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3?×?10{sup 14}, 3?×?10{sup 15}, and 3?×?10{sup 16}?cm{sup ?2}) and different implantation energies (from 0.75 to 2.0?MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.

  1. Effect of quantum nuclear motion on hydrogen bonding

    SciTech Connect (OSTI)

    McKenzie, Ross H., E-mail: r.mckenzie@uq.edu.au; Bekker, Christiaan [School of Mathematics and Physics, University of Queensland, Brisbane 4072 (Australia)] [School of Mathematics and Physics, University of Queensland, Brisbane 4072 (Australia); Athokpam, Bijyalaxmi; Ramesh, Sai G. [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560 012 (India)] [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560 012 (India)

    2014-05-07T23:59:59.000Z

    This work considers how the properties of hydrogen bonded complexes, X–H?Y, are modified by the quantum motion of the shared proton. Using a simple two-diabatic state model Hamiltonian, the analysis of the symmetric case, where the donor (X) and acceptor (Y) have the same proton affinity, is carried out. For quantitative comparisons, a parametrization specific to the O–H?O complexes is used. The vibrational energy levels of the one-dimensional ground state adiabatic potential of the model are used to make quantitative comparisons with a vast body of condensed phase data, spanning a donor-acceptor separation (R) range of about 2.4 ? 3.0 Ĺ, i.e., from strong to weak hydrogen bonds. The position of the proton (which determines the X–H bond length) and its longitudinal vibrational frequency, along with the isotope effects in both are described quantitatively. An analysis of the secondary geometric isotope effect, using a simple extension of the two-state model, yields an improved agreement of the predicted variation with R of frequency isotope effects. The role of bending modes is also considered: their quantum effects compete with those of the stretching mode for weak to moderate H-bond strengths. In spite of the economy in the parametrization of the model used, it offers key insights into the defining features of H-bonds, and semi-quantitatively captures several trends.

  2. 1,2-CF bond activation of perfluoroarenes and alkylidene isomers of titanium. DFT analysis of the CeF bond activation pathway and rotation of the titanium

    E-Print Network [OSTI]

    Baik, Mu-Hyun

    1,2-CF bond activation of perfluoroarenes and alkylidene isomers of titanium. DFT analysis of the CeF bond activation pathway and rotation of the titanium alkylidene moiety José G. Andino, Hongjun Received in revised form 26 July 2011 Accepted 27 July 2011 Keywords: Alkylidene Titanium CeF bond

  3. Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O-and OH,,,O-Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate

    E-Print Network [OSTI]

    Goddard III, William A.

    Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O- and OH,,,O- Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate (succinamate) and Monohydrogen 1 of amide NH,,,O- and carboxyl OH,,,O- hydrogen bonds were investigated via conformational analysis

  4. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    SciTech Connect (OSTI)

    Cockeram, B.V.

    1999-10-01T23:59:59.000Z

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 {micro}m to 100 {micro}m) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both {alpha}-SiC and {beta}-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the {alpha}-SiC and {beta}-SiC polytypes were similar.

  5. Rhodium-Catalyzed C-C Bond Formation via Heteroatom-Directed C-H Bond Activation

    SciTech Connect (OSTI)

    Colby, Denise; Bergman, Robert; Ellman, Jonathan

    2010-05-13T23:59:59.000Z

    Once considered the 'holy grail' of organometallic chemistry, synthetically useful reactions employing C-H bond activation have increasingly been developed and applied to natural product and drug synthesis over the past decade. The ubiquity and relative low cost of hydrocarbons makes C-H bond functionalization an attractive alternative to classical C-C bond forming reactions such as cross-coupling, which require organohalides and organometallic reagents. In addition to providing an atom economical alternative to standard cross - coupling strategies, C-H bond functionalization also reduces the production of toxic by-products, thereby contributing to the growing field of reactions with decreased environmental impact. In the area of C-C bond forming reactions that proceed via a C-H activation mechanism, rhodium catalysts stand out for their functional group tolerance and wide range of synthetic utility. Over the course of the last decade, many Rh-catalyzed methods for heteroatom-directed C-H bond functionalization have been reported and will be the focus of this review. Material appearing in the literature prior to 2001 has been reviewed previously and will only be introduced as background when necessary. The synthesis of complex molecules from relatively simple precursors has long been a goal for many organic chemists. The ability to selectively functionalize a molecule with minimal pre-activation can streamline syntheses and expand the opportunities to explore the utility of complex molecules in areas ranging from the pharmaceutical industry to materials science. Indeed, the issue of selectivity is paramount in the development of all C-H bond functionalization methods. Several groups have developed elegant approaches towards achieving selectivity in molecules that possess many sterically and electronically similar C-H bonds. Many of these approaches are discussed in detail in the accompanying articles in this special issue of Chemical Reviews. One approach that has seen widespread success involves the use of a proximal heteroatom that serves as a directing group for the selective functionalization of a specific C-H bond. In a survey of examples of heteroatom-directed Rh catalysis, two mechanistically distinct reaction pathways are revealed. In one case, the heteroatom acts as a chelator to bind the Rh catalyst, facilitating reactivity at a proximal site. In this case, the formation of a five-membered metallacycle provides a favorable driving force in inducing reactivity at the desired location. In the other case, the heteroatom initially coordinates the Rh catalyst and then acts to stabilize the formation of a metal-carbon bond at a proximal site. A true test of the utility of a synthetic method is in its application to the synthesis of natural products or complex molecules. Several groups have demonstrated the applicability of C-H bond functionalization reactions towards complex molecule synthesis. Target-oriented synthesis provides a platform to test the effectiveness of a method in unique chemical and steric environments. In this respect, Rh-catalyzed methods for C-H bond functionalization stand out, with several syntheses being described in the literature that utilize C-H bond functionalization in a key step. These syntheses are highlighted following the discussion of the method they employ.

  6. Metal-bonded, carbon fiber-reinforced composites

    DOE Patents [OSTI]

    Sastri, Suri A. (Lexington, MA); Pemsler, J. Paul (Lexington, MA); Cooke, Richard A. (Framingham, MA); Litchfield, John K. (Bedford, MA); Smith, Mark B. (Ipswich, MA)

    1996-01-01T23:59:59.000Z

    Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates.

  7. Metal-bonded, carbon fiber-reinforced composites

    DOE Patents [OSTI]

    Sastri, S.A.; Pemsler, J.P.; Cooke, R.A.; Litchfield, J.K.; Smith, M.B.

    1996-03-05T23:59:59.000Z

    Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates. 2 figs.

  8. COMPARISON OF AIR AND DEUTERIUM ON PINCH WELD BOND APPEARANCE

    SciTech Connect (OSTI)

    Korinko, P

    2005-10-11T23:59:59.000Z

    The effect that air and deuterium internal atmospheres have on the pinch weld bond quality was evaluated by conducting a scoping study using type 304L stainless steel LF-7 test stems that were fabricated for an associated study. Welds were made under cool, yet nominal conditions to exacerbate the influence of the atmosphere. The bond quality of the welds was directly related to the internal atmosphere with the air atmosphere welds being of lower quality than the deuterium atmosphere welds for nominally identical welding conditions.

  9. The reduction of carbon-carbon multiple bond systems

    E-Print Network [OSTI]

    Ferguson, Donald Roy

    1965-01-01T23:59:59.000Z

    and Uses, " Reinhold Publishing Corporations New York, N. Y. & 1956, p. 309 the dicarbanion with carbon dioxide yields the di-sodium salt of 1, 1, 2, 4 2-tetraphenylsuccinic acid. If two atoms of an alkali metal add to the multiple bond of an al- kyne... acid. One mole of carbon dioxide reacts with III to form the indone. It was proposed on the basis of the foregoing evidence that alkali metals could be caused to add across an acetylenic bond of a molecule to form a vinylic dicarbanion. It was hoped...

  10. Novel Chemically-Bonded Phosphate Ceramic Borehole Sealants (Ceramicretes) for Arctic Environments

    SciTech Connect (OSTI)

    Shirish Patil; Godwin A. Chukwu; Gang Chen; Santanu Khataniar

    2008-12-31T23:59:59.000Z

    Novel chemically bonded phosphate ceramic borehole sealant, i.e. Ceramicrete, has many advantages over conventionally used permafrost cement at Alaska North Slope (ANS). However, in normal field practices when Ceramicrete is mixed with water in blenders, it has a chance of being contaminated with leftover Portland cement. In order to identify the effect of Portland cement contamination, recent tests have been conducted at BJ services in Tomball, TX as well as at the University of Alaska Fairbanks with Ceramicrete formulations proposed by the Argonne National Laboratory. The tests conducted at BJ Services with proposed Ceramicrete formulations and Portland cement contamination have shown significant drawbacks which has caused these formulations to be rejected. However, the newly developed Ceramicrete formulation at the University of Alaska Fairbanks has shown positive results with Portland cement contamination as well as without Portland cement contamination for its effective use in oil well cementing operations at ANS.

  11. Brookhaven National Laboratory National Synchrotron Light Source

    E-Print Network [OSTI]

    Ohta, Shigemi

    Brookhaven National Laboratory National Synchrotron Light Source Number: Revision: LS-ESH-0027 06 copy of this file is the one on-line in the NSLS ESH website. Before using a printed copy, verify that it is the most current version by checking the document issue date on the NSLS ESH website. BROOKHAVEN NATIONAL

  12. Brookhaven National Laboratory National Synchrotron Light Source

    E-Print Network [OSTI]

    Ohta, Shigemi

    Brookhaven National Laboratory National Synchrotron Light Source Number: Revision: PS-ESH-0025 01 of this file is the one on-line in the NSLS ESH website. Before using a printed copy, verify that it is the most current version by checking the document issue date on the NSLS ESH website. BROOKHAVEN NATIONAL

  13. Brookhaven National Laboratory National Synchrotron Light Source

    E-Print Network [OSTI]

    Ohta, Shigemi

    Brookhaven National Laboratory National Synchrotron Light Source Number: Revision: LS-ESH-0026 4 of this file is the one on-line in the PS ESH website. Before using a printed copy, verify that it is the most current version by checking the document issue date on the PS ESH website. BROOKHAVEN NATIONAL LABORATORY

  14. Method of preparation of bonded polyimide fuel cell package

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Jankowski, Alan (Livermore, CA); Graff, Robert T. (Modesto, CA); Bettencourt, Kerry (Dublin, CA)

    2011-04-26T23:59:59.000Z

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  15. Advance Refundings of Municipal Bonds Columbia Business School

    E-Print Network [OSTI]

    Sadeh, Norman M.

    Advance Refundings of Municipal Bonds Andrew Ang Columbia Business School and NBER Richard C. Green of Vineer Bhansali, Trevor Harris, Tal Heppenstall, Andrew Kalotay, Kemp Lewis, Paul Luhmann, Matt of colleagues, especially Jennifer Carpenter, Dan Li, Norman Sch¨urhoff, and Chester Spatt, along with seminar

  16. Hydrogen Bonding Increases Packing Density in the Protein Interior

    E-Print Network [OSTI]

    Hydrogen Bonding Increases Packing Density in the Protein Interior David Schell,1,2 Jerry Tsai,1 J System Health Science Center, College Station, Texas 77843-1114 ABSTRACT The contribution of hydrogen to the stability, but experimental studies show that bury- ing polar groups, especially those that are hydrogen

  17. Water inertial reorientation: Hydrogen bond strength and the angular potential

    E-Print Network [OSTI]

    Fayer, Michael D.

    Water inertial reorientation: Hydrogen bond strength and the angular potential David E. Moilanen) The short-time orientational relaxation of water is studied by ultrafast infrared pump-probe spectroscopy with recent molecular dynamics simulations employing the simple point charge-extended water model at room

  18. Channel Bonding in Cognitive Radio Wireless Sensor Networks

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Channel Bonding in Cognitive Radio Wireless Sensor Networks Mubashir Husain Rehmani, St-mail: rehmani@univ-mlv.fr, lohier@univ-mlv.fr, rachedi@univ-mlv.fr Abstract--Recently, wireless sensor networks, Wireless Multimedia Sensor Networks (WMSNs) have lot of new potential applications in different domains

  19. Chemical bonding of hydrogen molecules to transition metal complexes

    SciTech Connect (OSTI)

    Kubas, G.J.

    1990-01-01T23:59:59.000Z

    The complex W(CO){sub 3}(PR{sub 3}){sub 2}(H{sub 2}) (CO = carbonyl; PR{sub 3} = organophosphine) was prepared and was found to be a stable crystalline solid under ambient conditions from which the hydrogen can be reversibly removed in vacuum or under an inert atmosphere. The weakly bonded H{sub 2} exchanges easily with D{sub 2}. This complex represents the first stable compound containing intermolecular interaction of a sigma-bond (H-H) with a metal. The primary interaction is reported to be donation of electron density from the H{sub 2} bonding electron pair to a vacant metal d-orbital. A series of complexes of molybdenum of the type Mo(CO)(H{sub 2})(R{sub 2}PCH{sub 2}CH{sub 2}PR{sub 2}){sub 2} were prepared by varying the organophosphine substitutent to demonstrate that it is possible to bond either dihydrogen or dihydride by adjusting the electron-donating properties of the co-ligands. Results of infrared and NMR spectroscopic studies are reported. 20 refs., 5 fig.

  20. Enantioselective nickel catalysis : exploiting activated C-H bonds

    E-Print Network [OSTI]

    Bencivenga, Nicholas Ernest

    2012-01-01T23:59:59.000Z

    A method for the nickel-catalyzed cross-coupling between benzoxazole and secondary halides was explored. This method was to make use of the activated C-H bond found in benzoxazole at the 2-position to generate the nucleophilic ...

  1. Bonded polyimide fuel cell package and method thereof

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

    2005-11-01T23:59:59.000Z

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  2. Diffusion limited cluster aggregation with irreversible flexible bonds

    E-Print Network [OSTI]

    Sujin Babu; Jean-Christophe Gimel; Taco Nicolai

    2008-01-29T23:59:59.000Z

    Irreversible diffusion limited cluster aggregation (DLCA) of hard spheres was simulated using Brownian cluster dynamics. Bound spheres were allowed to move freely within a specified range, but no bond breaking was allowed. The structure and size distribution of the clusters was investigated before gelation. The pair correlation function and the static structure factor of the gels were determined as a function of the volume fraction and time. Bond flexibility led to local densification of the clusters and the gels, with a certain degree of order. At low volume fractions densification of the clusters occurred during their growth, but at higher volume fractions it occurred mainly after gelation. At very low volume fractions, the large scale structure (fractal dimension), size distribution and growth kinetics of the clusters was found to be close to that known for DLCA with rigid bonds. Restructuring of the gels continued for long times, indicating that aging processes in systems with strong attraction do not necessarily involve bond breaking. The mean square displacement of particles in the gels was determined. It is shown to be highly heterogeneous and to increase with decreasing volume fraction.

  3. WHAT'S GRAPHENE? Mono or few layers of sp2 bonded

    E-Print Network [OSTI]

    Mellor-Crummey, John

    WHAT'S GRAPHENE? · Mono or few layers of sp2 bonded carbon atoms in a honeycomb lattice 105cm2/Vs at RT. 1 Due to its unique transport properties, graphene is suitable for implementation sampling (EOS) timeresolved spectroscopy to optically pump and THz probe exfoliated graphene ribbons (GR

  4. A Single Disulfide Bond Differentiates Aggregation Pathways of 2-Microglobulin

    E-Print Network [OSTI]

    Dokholyan, Nikolay V.

    simulation; aggregation; domain swapping*Corresponding author Introduction Amyloid fibrils are insolubleA Single Disulfide Bond Differentiates Aggregation Pathways of ß2-Microglobulin Yiwen Chen1 at Chapel Hill Chapel Hill, NC 27599, USA Deposition of wild-type ß2-microglobulin (ß2m) into amyloid

  5. Bonded labour The Dalits of Nepal are a marginalised

    E-Print Network [OSTI]

    Richner, Heinz

    Bonded labour The Dalits of Nepal are a marginalised group of people who have suffered systematic that, while illegal, is still widespread in remote rural areas of Nepal. To meet their basic needs in their neighbour- hood. Referred to in Nepal as Haliya/ Haruwa and Charuwa, they have to plough the landlords' land

  6. alteredintramolecular hydrogen-bonding pattern: Topics by E-print...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    alteredintramolecular hydrogen-bonding pattern First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1...

  7. Conceptual Design of a MEDE Treatment System for Sodium Bonded Fuel

    SciTech Connect (OSTI)

    Carl E. Baily; Karen A. Moore; Collin J. Knight; Peter B. Wells; Paul J. Petersen; Ali S. Siahpush; Matthew T. Weseman

    2008-05-01T23:59:59.000Z

    Unirradiated sodium bonded metal fuel and casting scrap material containing highly enriched uranium (HEU) is stored at the Materials and Fuels Complex (MFC) on the Idaho National Laboratory (INL). This material, which includes intact fuel assemblies and elements from the Fast Flux Test Facility (FFTF) and Experimental Breeder Reactor-II (EBR-II) reactors as well as scrap material from the casting of these fuels, has no current use under the terminated reactor programs for both facilities. The Department of Energy (DOE), under the Sodium-Bonded Spent Nuclear Fuel Treatment Record of Decision (ROD), has determined that this material could be prepared and transferred to an off-site facility for processing and eventual fabrication of fuel for commercial nuclear reactors. A plan is being developed to prepare, package and transfer this material to the DOE High Enriched Uranium Disposition Program Office (HDPO), located at the Y-12 National Security Complex in Oak Ridge, Tennessee. Disposition of the sodium bonded material will require separating the elemental sodium from the metallic uranium fuel. A sodium distillation process known as MEDE (Melt-Drain-Evaporate), will be used for the separation process. The casting scrap material needs to be sorted to remove any foreign material or fines that are not acceptable to the HDPO program. Once all elements have been cut and loaded into baskets, they are then loaded into an evaporation chamber as the first step in the MEDE process. The chamber will be sealed and the pressure reduced to approximately 200 mtorr. The chamber will then be heated as high as 650 şC, causing the sodium to melt and then vaporize. The vapor phase sodium will be driven into an outlet line where it is condensed and drained into a receiver vessel. Once the evaporation operation is complete, the system is de-energized and returned to atmospheric pressure. This paper describes the MEDE process as well as a general overview of the furnace systems, as necessary, to complete the MEDE process.

  8. National Science Bowl Finals

    ScienceCinema (OSTI)

    None

    2010-09-01T23:59:59.000Z

    National Science Bowl finals and awards at the National Building Museum in Washington D.C. Monday 5/3/2010

  9. Sandia National Laboratories: solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Interactive Tour Operated by Sandia National Laboratories for the U.S. Department of Energy (DOE), the National Solar Thermal Test Facility (NSTTF) is the only test facility...

  10. Sandia National Laboratories: PV

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2014 Sandia Corporation | Questions & Comments | Privacy & Security U.S. Department of Energy National Nuclear Security Administration Sandia National Laboratories is a...

  11. Sandia National Laboratories: Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Solar Thermal Test Facility, News, News & Events, Partnership, Renewable Energy, Solar, Solar Newsletter On November 24, 2012 the National Solar Thermal Test...

  12. Sandia National Laboratories: ACEC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ACEC Sandia Solar Energy Test System Cited in National Engineering Competition On May 16, 2013, in Concentrating Solar Power, Energy, Energy Storage, Facilities, National Solar...

  13. National Science Bowl Finals

    SciTech Connect (OSTI)

    2010-05-03T23:59:59.000Z

    National Science Bowl finals and awards at the National Building Museum in Washington D.C. Monday 5/3/2010

  14. National Nuclear Security Administration

    Broader source: Energy.gov (indexed) [DOE]

    and Related Structures within TA-3 at Los Alamos National Laboratory, Los Alamos, New Mexico U. S. Department of Energy National Nuclear Security Administration Los Alamos Area...

  15. Sandia National Laboratories: SAND 2012-4472 P

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voids were observed in bond lines away from fracture surface. Unclear if voids were ... Diffusion Bonding Characterization On March 26, 2014, in Diffusion Bond Characterization...

  16. National Renewable Energy Laboratory

    E-Print Network [OSTI]

    National Renewable Energy Laboratory Innovation for Our Energy Future ponsorship Format Reversed Color:White rtical Format Reversed-A ertical Format Reversed-B National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future National Renewable Energy Laboratory

  17. Sandia National Laboratories: Sandia National Laboratories

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Hosted by Sandia National Laboratories and the Electric Power Research Institute (EPRI) Inverter reliability drives project life cycle costs and plant performance. This...

  18. Sandia National Laboratories: National Rotor Testbed Functional...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of the National Rotor Testbed: An Aeroelastically Relevant Research-Scale Wind Turbine Rotor." Approximately 60 researchers from various institutions and countries attended...

  19. Consent Order, Lawrence Livermore National National Security...

    Energy Savers [EERE]

    for deficiencies associated with the Lawrence Livermore National Laboratory Chronic Beryllium Disease Prevention Program On October 29, 2010, the U.S. Department of Energy (DOE)...

  20. Sandia National Laboratories: Jawaharlal Nehru Solar National...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jawaharlal Nehru Solar National Solar Energy Mission Solar Energy Research Institute for India and the United States Kick-Off On November 27, 2012, in Concentrating Solar Power,...

  1. National Security Photo Gallery | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Security Photo Gallery Richard Cirillo 1 of 10 Richard Cirillo RICHARD R. CIRILLO Dr. Richard R. Cirillo serves as Director of the Decision and Information Sciences...

  2. Sandia National Laboratories: national reliability database

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    national reliability database Third Annual Continuous Reliability Enhancement for Wind (CREW) Database Report Now Available On October 17, 2013, in Energy, News, News & Events,...

  3. Argonne National Laboratory | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne National Laboratory Slip sliding away Graphene and diamonds prove a slippery combination Read More ACT-SO winners Argonne mentors students for the next generation of...

  4. Cu-Cu direct bonding achieved by surface method at room temperature

    SciTech Connect (OSTI)

    Utsumi, Jun [Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515 (Japan); Ichiyanagi, Yuko, E-mail: yuko@ynu.ac.jp [Department of Physics, Graduate School of Engineering, Yokohama National University, Tokiwadai, Hodogaya, Yokohama 240-8501 (Japan)

    2014-02-20T23:59:59.000Z

    The metal bonding is a key technology in the processes for the microelectromechanical systems (MEMS) devices and the semiconductor devices to improve functionality and higher density integration. Strong adhesion between surfaces at the atomic level is crucial; however, it is difficult to achieve close bonding in such a system. Cu films were deposited on Si substrates by vacuum deposition, and then, two Cu films were bonded directly by means of surface activated bonding (SAB) at room temperature. The two Cu films, with the surface roughness Ra about 1.3nm, were bonded by using SAB at room temperature, however, the bonding strength was very weak in this method. In order to improve the bonding strength between the Cu films, samples were annealed at low temperatures, between 323 and 473 K, in air. As the result, the Cu-Cu bonding strength was 10 times higher than that of the original samples without annealing.

  5. Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Abstract:...

  6. Imaging Adsorbate O-H Bond Cleavage: Methanol on TiO2(110). ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    O-H Bond Cleavage: Methanol on TiO2(110). Abstract: We investigated methanol adsorption and dissociation on bridge-bonded oxygen vacancies of TiO2(110) (1×1) surface...

  7. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

  8. Dynamical bond cooperativity enables very fast and strong binding between sliding surfaces

    E-Print Network [OSTI]

    Trřmborg, Jřrgen Kjoshagen

    2015-01-01T23:59:59.000Z

    Cooperative binding affects many processes in biology, but it is commonly addressed only in equilibrium. In this work we explore dynamical cooperativity in driven systems, where the cooperation occurs because some of the bonds change the dynamical response of the system to a regime where the other bonds become active. To investigate such cooperativity we study the frictional binding between two flow driven surfaces that interact through a large population of activated bonds. In particular, we study systems where each bond can have two different modes: one mode corresponds to a fast forming yet weak bond, and the other is a strong yet slow forming bond. We find considerable cooperativity between both types of bonds. Under some conditions the system behaves as if there were only one binding mode, corresponding to a strong and fast forming bond. Our results may have important implications on the friction and adhesion between sliding surfaces containing complementary binding motifs, such as in the case of cells b...

  9. The contribution of tyrosine water=hydrogen bonds to protein stability

    E-Print Network [OSTI]

    Bechert, Charles John

    2013-02-22T23:59:59.000Z

    studied: RNase Sa (Tyr 30, 49, 55, 81 ? v Phc). Studying the RNasc Sa mutanls will allow us to compare the importance of intramolccular hydrogen bonds involving other groups within I. he protein versus intermolecular hydrogen bonds involving buried HTO...

  10. New method to diffusion bond superalloys A. A. Shirzadi and E. R. Wallach

    E-Print Network [OSTI]

    Cambridge, University of

    carried out in this eld. Despite recent developments in the fusion welding of superalloys using laser, such as brazing and transient liquid phase (TLP) diffusion bonding, normally require long bonding times and

  11. Facile Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene-Containing Tungsten Dimer CpW(CO)2(IMe)2. Facile Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene-Containing...

  12. 2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded Oxygen Vacancy Blocking. 2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded Oxygen Vacancy Blocking....

  13. Role of interatomic bonding in the mechanical anisotropy and interlayer cohesion of CSH crystals

    SciTech Connect (OSTI)

    Dharmawardhana, C.C. [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States); Misra, A. [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States)] [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States); Aryal, S.; Rulis, P. [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States); Ching, W.Y., E-mail: ccdxz8@mail.umkc.edu [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)

    2013-10-15T23:59:59.000Z

    Atomic scale properties of calcium silicate hydrate (CSH), the main binding phase of hardened Portland cement, are not well understood. Over a century of intense research has identified almost 50 different crystalline CSH minerals which are mainly categorized by their Ca/Si ratio. The electronic structure and interatomic bonding in four major CSH crystalline phases with structures close to those found in hardened cement are investigated via ab initio methods. Our result reveals the critical role of hydrogen bonding and importance of specifying precise locations for water molecules. Quantitative analysis of contributions from different bond types to the overall cohesion shows that while the Si-O covalent bonds dominate, the hydrogen bonding and Ca-O bonding are also very significant. Calculated results reveal the correlation between bond topology and interlayer cohesion. The overall bond order density (BOD) is found to be a more critical measure than the Ca/Si ratio in classifying different CSH crystals.

  14. Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)

    SciTech Connect (OSTI)

    Devoto, D.

    2014-06-01T23:59:59.000Z

    This presentation reviews the status of the performance and reliability of bonded interfaces for high-temperature packaging.

  15. Ceramic-Metal Bonding Research in Japan japanese metals laboratories are becoming materials

    E-Print Network [OSTI]

    Eagar, Thomas W.

    bonding (Fig. 1), plasma spraying, brazing, or laser processing. In the Department of Weld1ng Engineering

  16. Mixed valency and electronic structure in self-assembled monolayers, self-exchange, and hydrogen bonded assemblies

    E-Print Network [OSTI]

    Goeltz, John Christopher

    2011-01-01T23:59:59.000Z

    P. ”Mixed valency across hydrogen bonds” J. Am. Chem. Soc.6 Mixed valency across hydrogen bonds: a more completeMixed valency across hydrogen bonds,” by John C. Goeltz and

  17. Sandia National Laboratories: Experimental Testing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

  18. Hydrogen Bond Dissociation and Reformation in Methanol Oligomers Following Hydroxyl Stretch Relaxation

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen Bond Dissociation and Reformation in Methanol Oligomers Following Hydroxyl Stretch, 2002 Vibrational relaxation and hydrogen bond dynamics in methanol-d dissolved in CCl4 have been-d molecules both accepting and donating hydrogen bonds at 2500 cm-1 . Following vibrational relaxation

  19. Hydrogen bond dynamics in the active site of photoactive yellow protein

    E-Print Network [OSTI]

    Herschlag, Dan

    Hydrogen bond dynamics in the active site of photoactive yellow protein Paul A. Sigala, Mark A for review February 5, 2009) Hydrogen bonds play major roles in biological structure and function. Nonetheless, hydrogen-bonded protons are not typically observed by X-ray crystallography, and most structural

  20. Hydrogen bond breaking probed with multidimensional stimulated vibrational echo correlation spectroscopy

    E-Print Network [OSTI]

    Fayer, Michael D.

    Hydrogen bond breaking probed with multidimensional stimulated vibrational echo correlation September 2003 Hydrogen bond population dynamics are extricated with exceptional detail using ultrafast ( 50 of methanol­OD oligomers in CCl4 . Hydrogen bond breaking makes it possible to acquire data for times much

  1. The Hydrogen Bonding of Cytosinewith Guanine:Calorimetric and`H-NMR Analysis

    E-Print Network [OSTI]

    Williams, Loren

    The Hydrogen Bonding of Cytosinewith Guanine:Calorimetric and`H-NMR Analysis of the Molecular of hydrogen-bondformation between guanine (G) and cytusine (C) in o-dichloro- benzene and in chloroformat 25°C forming hydrogen bonds. Consequently, hydrogen-bond formation in our system is primarily between the bases

  2. Hydrogen bond dynamics in membrane protein function Ana-Nicoleta Bondar a,

    E-Print Network [OSTI]

    White, Stephen

    Review Hydrogen bond dynamics in membrane protein function Ana-Nicoleta Bondar a, , Stephen H 30 November 2011 Available online 8 December 2011 Keywords: Membrane protein structure Hydrogen bond Membrane protein dynamics Lipid­protein interactions Changes in inter-helical hydrogen bonding

  3. Low Temperature Transient Liquid Phase Bonding of Ti6AI4V

    E-Print Network [OSTI]

    Eagar, Thomas W.

    bonds by intermetallic formation and subsequent diffusion annealing, but are limited to temperatures above 87s·c. Solid state activated diffusion bonding using sputtered copper intcrlayers will form joints temperature [1,2]. 1LP bonding of titanium has been used to produce aerospace components as descnoed by Norris

  4. Bonding is carried out by building up Quartz Wax on the sample holder to

    E-Print Network [OSTI]

    Smith, Tanya M.

    Bonding is carried out by building up Quartz Wax on the sample holder to support and bond the tooth that the Quartz Wax should cover as much of the sample face as possible to ensure a strong bond. Application Note Tooth Wax layer Figure 1 Sample holder Tooth Thin Section #12;B. Cutting - SIngle Selection Figure 2

  5. Correlation Analysis of Chemical Bonds (CACB) II: Quantum Mechanical Operators for Classical Chemical Concepts

    E-Print Network [OSTI]

    Goddard III, William A.

    crossing in reactions still lags far behind. Theoretical approaches to extracting the underlying chemicalCorrelation Analysis of Chemical Bonds (CACB) II: Quantum Mechanical Operators for Classical of the statistical covariance of the previous operator. Here the bonds correlation relates to bond exchange processes

  6. Information-Based Trading in the Junk Bond Market Department of Applied Economics and Management

    E-Print Network [OSTI]

    Kearns, Michael

    Information-Based Trading in the Junk Bond Market Xing Zhou Department of Applied Economics-based trading takes place in the high-yield corporate bond market, and how firm-specific information flow across that current corporate bond returns have explanatory power for future stock price changes. This implies

  7. TRANSIENT UQUID PHASE BONDING PROCESSES W. D. MacDonald and T.W. Eagar

    E-Print Network [OSTI]

    Eagar, Thomas W.

    . In this article, the term TLP \\viii apply to those bonding processes which rely on solid state diffusion to drive) ) ) .. ' TRANSIENT UQUID PHASE BONDING PROCESSES W. D. MacDonald and T.W. Eagar Department Transient liquid phase (TLP) bonding is an ancient process that has received increased attention in recent

  8. Silver diffusion bonding and layer transfer of lithium niobate to silicon Kenneth Diest,a

    E-Print Network [OSTI]

    Atwater, Harry

    Silver diffusion bonding and layer transfer of lithium niobate to silicon Kenneth Diest,a Melissa J July 2008; accepted 8 August 2008; published online 5 September 2008 A diffusion bonding method has, and upon heating, a diffusion bond was formed. Transmission electron microscopy confirms the interface

  9. Influence of silicon dangling bonds on germanium thermal diffusion within R. S. Cai,2

    E-Print Network [OSTI]

    Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass D. Barba,1 R online 17 March 2014) We study the influence of silicon dangling bonds on germanium thermal diffusion of several orders of magnitudes.12,16­18 This may suggest that Si dangling bonds can affect the diffusion

  10. Particle/substrate interaction in the cold-spray bonding process

    E-Print Network [OSTI]

    Grujicic, Mica

    , atomic inter-diffusion is not expected to play a significant role in particle/substrate bonding. This canC2 148 9 Particle/substrate interaction in the cold-spray bonding process M. GRUJICIC, Clemson in this chapter to the problem of particle/substrate interactions and bonding during cold spray. The actual

  11. Electric charge trapping, residual stresses and properties of ceramics after metal/ceramics bonding

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    and diffusion of metallic species in the ceramics, during the bonding process. Keywords: Joining; ToughnessElectric charge trapping, residual stresses and properties of ceramics after metal/ceramics bonding applications is rapidly increasing. Most of these applications require the use of ceramics bonded with metal

  12. Low Temperature Transient Liquid Phase (LTTLP) Bonding for Au/Cu

    E-Print Network [OSTI]

    Eagar, Thomas W.

    of Technology, Cambridge, MA 02139 TheLow Temperature TransientLiquidPhase Diffusion Bonding (LTTLP) process has) ) M. M. Hou Low Temperature Transient Liquid Phase (LTTLP) Bonding for Au/Cu and Cu been bonded to copper heatsink.s at temperatures less than 160"C, using /n-Sn eutectic solders. After

  13. Simultaneous Bayesian reconstruction of diffusivity and bond potentials using path integrals

    E-Print Network [OSTI]

    Levine, Alex J.

    Simultaneous Bayesian reconstruction of diffusivity and bond potentials using path integrals Joshua requires fewer data and allows simultaneous inference of both complex bond potentials and diffusivity spectroscopy (DFS) has been used to distort bonds. The resulting responses, in the form of rupture forces, work

  14. The time reversed elastic nonlinearity diagnostic applied to evaluation of diffusion bonds

    E-Print Network [OSTI]

    The time reversed elastic nonlinearity diagnostic applied to evaluation of diffusion bonds T. J based nondestructive evaluation techniques has begun. Here, diffusion bonded metal disks containing and impulse responses to perform TR experiments in thin h 5 mm, d 5 cm diffusion bonded disks, in order

  15. Ionwater hydrogen-bond switching observed with 2D IR vibrational echo chemical

    E-Print Network [OSTI]

    Fayer, Michael D.

    Ion­water hydrogen-bond switching observed with 2D IR vibrational echo chemical exchange for review November 8, 2008) The exchange of water hydroxyl hydrogen bonds between anions and water oxygens of anion­ water hydroxyl hydrogen bond switching under thermal equilib- rium conditions as Taw 7 1 ps. Pump

  16. Extent of Hydrogen-Bond Protection in Folded Proteins: A Constraint on Packing Architectures

    E-Print Network [OSTI]

    Berry, R. Stephen

    Extent of Hydrogen-Bond Protection in Folded Proteins: A Constraint on Packing Architectures Ariel structuring and ultimately exclusion of water by hydrophobes surrounding backbone hydrogen bonds turn hydrophobes yields an optimal hydrogen-bond stabilization. This motif is shown to be nearly ubiquitous

  17. Ligand Binding to the Pregnane X Receptor by Geometric Matching of Hydrogen Bonds

    E-Print Network [OSTI]

    North Carolina at Chapel Hill, University of

    space. Hydrogen bonds have been used in FlexX [3] as part of a more complete energy function. Our conformations to PXR based on hydrogen bond geometry and use them as a starting point for ranking ligands aspect of the energy function, the hydrogen bonds, in order to identify the discriminating factor

  18. Native Hydrogen Bonds in a Molten Globule: The Apoflavodoxin Thermal Intermediate

    E-Print Network [OSTI]

    Sancho, Javier

    Native Hydrogen Bonds in a Molten Globule: The Apoflavodoxin Thermal Intermediate MarőÂa P. IruÂn1 in surface- exposed hydrogen bonds connecting secondary-structure elements in the native protein. All hydrogen bonds analysed are formed in the molten globule intermediate, either with native strength

  19. A CH O Hydrogen Bond Stabilized Polypeptide Chain Reversal Motif at the C Terminus of Helices

    E-Print Network [OSTI]

    Babu, M. Madan

    A C­H· · ·O Hydrogen Bond Stabilized Polypeptide Chain Reversal Motif at the C Terminus of Helices of Science Bangalore 560012, India The serendipitous observation of a C­H· · ·O hydrogen bond mediated­N hydrogen bond involving the side- chain of residue T 2 4 and the N­H group of residue T ţ 3. In as many

  20. Bonding topologies in diamondlike amorphous-carbon films

    SciTech Connect (OSTI)

    SIEGAL,MICHAEL P.; PROVENCIO,PAULA P.; TALLANT,DAVID R.; SIMPSON,REGINA L.; KLEINSORGE,B.; MILNE,W.I.

    2000-01-27T23:59:59.000Z

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces and their thicknesses increase with increasing deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies < 60 eV and increases for films grown using ion energies > 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of 4-fold to 3-fold coordinated carbon atoms.

  1. Characterization of Fuel-Cladding Bond Strength Using Laser Shock

    SciTech Connect (OSTI)

    James A. Smith; David L. Cottle; Barry H. Rabin

    2014-04-01T23:59:59.000Z

    This paper describes new laser-based capabilities for characterization of fuel-cladding bond strength in nuclear fuels, and presents preliminary results obtained from studies on as-fabricated monolithic fuel consisting of uranium-10 wt.% molybdenum alloys clad in 6061 aluminum by hot isostatic pressing. Two complementary experimental methods are employed, laser-shock testing and laser-ultrasonic imaging. Measurements are spatially localized, non-contacting and require minimum specimen preparation, and are therefore ideally suited for applications involving radioactive materials, including irradiated materials. The theoretical principles and experimental approaches employed in characterization of nuclear fuel plates are described. The ability to measure layer thicknesses, elastic properties of the constituents, and the location and nature of laser-shock induced debonds is demonstrated, and preliminary bond strength measurement results are discussed.

  2. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOE Patents [OSTI]

    Taylor, G.W.; Roybal, H.E.

    1983-11-14T23:59:59.000Z

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al/sub 2/O/sub 3/ yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  3. Understanding mechanisms for C-H bond activation

    E-Print Network [OSTI]

    Vastine, Benjamin Alan

    2009-05-15T23:59:59.000Z

    is unclear as electrophilic and oxidative addition / reductive elimination (OA/RE) pathways have been proposed, and the research into this problem and other related aspects of this chemistry have been extensively considered in several books 18 and reviews... been proposed that lie between the two classic mechanisms that were discussed above; Lin has recently reviewed the current work in this field. 41 Webster and coworkers proposed metal-assisted ?-bond metathesis (MA?BM), 42 Lin and coworkers...

  4. Oxford Area Community School District (Michigan) Bonds Case Study

    Broader source: Energy.gov [DOE]

    Michigan’s Oxford Area Community School District entered into an energy savings performance contract and issued limited tax general obligation bonds to fund the up-front costs of almost $3 million of energy-related improvements. Case study is excerpted from Financing Energy Upgrades for K-12 School Districts: A Guide to Tapping into Funding for Energy Efficiency and Renewable Energy Improvements. Author: Merrian Borgeson and Mark Zimring

  5. Compacting Plastic-Bonded Explosive Molding Powders to Dense Solids

    SciTech Connect (OSTI)

    B. Olinger

    2005-04-15T23:59:59.000Z

    Dense solid high explosives are made by compacting plastic-bonded explosive molding powders with high pressures and temperatures for extended periods of time. The density is influenced by manufacturing processes of the powders, compaction temperature, the magnitude of compaction pressure, pressure duration, and number of repeated applications of pressure. The internal density variation of compacted explosives depends on method of compaction and the material being compacted.

  6. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOE Patents [OSTI]

    Taylor, Gene W. (Los Alamos, NM); Roybal, Herman E. (Santa Fe, NM)

    1985-01-01T23:59:59.000Z

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al.sub.2 O.sub.3 yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  7. Molecular dynamics of gas phase hydrogen-bonded complexes

    E-Print Network [OSTI]

    Wofford, Billy Alan

    1987-01-01T23:59:59.000Z

    . These analyses have permitted the calculation of an approximate stretching harmonic force field for the hydrogen-bound heterodimer HCN---HF. In addition, a new technique is developed to determine both the ground state and equilibrium dissociation energies... OF FIGURES. CHAPTER I. INTRODUCTION. CHAPTER II. MOLECULAR DYNAMICS IN HYDROGEN-BONDED INTERACTIONS: A PRELIMINARY EXPERIMENTALLY DETERMINED HARMONIC STRETCHING FORCE FIELD FOR HCN---HF. Introduction. Experimental Calculations. 10 Discussion. 19...

  8. Cold bond agglomeration of waste oxides for recycling

    SciTech Connect (OSTI)

    D`Alessio, G.; Lu, W.K. [McMaster Univ., Hamilton, Ontario (Canada). Dept. of Materials Science and Engineering

    1996-12-31T23:59:59.000Z

    Recycling of waste oxides has been an on-going challenge for integrated steel plants. The majority of these waste oxides are collected from the cleaning systems of ironmaking and steelmaking processes, and are usually in the form of fine particulates and slurries. In most cases, these waste materials are contaminated by oils and heavy metals and often require treatment at a considerable expense prior to landfill disposal. This contamination also limits the re-use or recycling potential of these oxides as secondary resources of reliable quality. However, recycling of some selected wastes in blast furnaces or steelmaking vessels is possible, but first requires agglomeration of the fine particulate by such methods as cold bond briquetting. Cold bond briquetting technology provides both mechanical compacting and bonding (with appropriate binders) of the particulates. This method of recycling has the potential to be economically viable and environmentally sustainable. The nature of the present study is cold bond briquetting of iron ore pellet fines with a molasses-cement-H{sub 2}O binder for recycling in a blast furnace. The inclusion of molasses is for its contribution to the green strength of briquettes. During the curing stage, significant gains in strength may be credited to molasses in the presence of cement. The interactions of cement (and its substitutes), water and molasses and their effects on the properties of the agglomerates during and after various curing conditions were investigated. Tensile strengths of briquettes made in the laboratory and subjected to experimental conditions which simulated the top part of a blast furnace shaft were also examined.

  9. Algorithm for anisotropic diffusion in hydrogen-bonded networks

    E-Print Network [OSTI]

    Edoardo Milotti

    2007-04-04T23:59:59.000Z

    In this paper I describe a specialized algorithm for anisotropic diffusion determined by a field of transition rates. The algorithm can be used to describe some interesting forms of diffusion that occur in the study of proton motion in a network of hydrogen bonds. The algorithm produces data that require a nonstandard method of spectral analysis which is also developed here. Finally, I apply the algorithm to a simple specific example.

  10. Quantum Confinement in Hydrogen Bond of DNA and RNA

    E-Print Network [OSTI]

    da Silva dos Santos; Elso Drigo Filho; Regina Maria Ricotta

    2015-02-09T23:59:59.000Z

    The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.

  11. Quantum Confinement in Hydrogen Bond of DNA and RNA

    E-Print Network [OSTI]

    Santos, da Silva dos; Ricotta, Regina Maria

    2015-01-01T23:59:59.000Z

    The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.

  12. Opening Pandora's Box - Sovereign Bonds in International Arbitration

    E-Print Network [OSTI]

    Waibel, Michael

    OPENING PANDORA’S BOX: SOVEREIGN BONDS IN INTERNATIONAL ARBITRATION By Michael Waibel* In recent years, sovereign debt crises have received much attention from the perspective of international public policy, but an effective legal solution... . In 1995, Mexico was unable to meet its external debt obligations. Three years later, a severe financial crisis hit East Asia. Russia defaulted in 1998. Argentina’s 2001 default on more than U.S.$100 billion in private debt was the largest in history.7...

  13. Development and validation of bonded composite doubler repairs for commercial aircraft.

    SciTech Connect (OSTI)

    Roach, Dennis Patrick; Rackow, Kirk A.

    2007-07-01T23:59:59.000Z

    A typical aircraft can experience over 2,000 fatigue cycles (cabin pressurizations) and even greater flight hours in a single year. An unavoidable by-product of aircraft use is that crack, impact, and corrosion flaws develop throughout the aircraft's skin and substructure elements. Economic barriers to the purchase of new aircraft have placed even greater demands on efficient and safe repair methods. The use of bonded composite doublers offers the airframe manufacturers and aircraft maintenance facilities a cost effective method to safely extend the lives of their aircraft. Instead of riveting multiple steel or aluminum plates to facilitate an aircraft repair, it is now possible to bond a single Boron-Epoxy composite doubler to the damaged structure. The FAA's Airworthiness Assurance Center at Sandia National Labs (AANC), Boeing, and Federal Express completed a pilot program to validate and introduce composite doubler repair technology to the U.S. commercial aircraft industry. This project focused on repair of DC-10 fuselage structure and its primary goal was to demonstrate routine use of this repair technology using niche applications that streamline the design-to-installation process. As composite doubler repairs gradually appear in the commercial aircraft arena, successful flight operation data is being accumulated. These commercial aircraft repairs are not only demonstrating the engineering and economic advantages of composite doubler technology but they are also establishing the ability of commercial maintenance depots to safely adopt this repair technique. This report presents the array of engineering activities that were completed in order to make this technology available for widespread commercial aircraft use. Focused laboratory testing was conducted to compliment the field data and to address specific issues regarding damage tolerance and flaw growth in composite doubler repairs. Fatigue and strength tests were performed on a simulated wing repair using a substandard design and a flawed installation. In addition, the new Sol-Gel surface preparation technique was evaluated. Fatigue coupon tests produced Sol-Gel results that could be compared with a large performance database from conventional, riveted repairs. It was demonstrated that not only can composite doublers perform well in severe off-design conditions (low doubler stiffness and presence of defects in doubler installation) but that the Sol-Gel surface preparation technique is easier and quicker to carry out while still producing optimum bonding properties. Nondestructive inspection (NDI) methods were developed so that the potential for disbond and delamination growth could be monitored and crack growth mitigation could be quantified. The NDI methods were validated using full-scale test articles and the FedEx aircraft installations. It was demonstrated that specialized NDI techniques can detect flaws in composite doubler installations before they reach critical size. Probability of Detection studies were integrated into the FedEx training in order to quantify the ability of aircraft maintenance depots to properly monitor these repairs. In addition, Boeing Structural Repair and Nondestructive Testing Manuals were modified to include composite doubler repair and inspection procedures. This report presents the results from the FedEx Pilot Program that involved installation and surveillance of numerous repairs on operating aircraft. Results from critical NDI evaluations are reported in light of damage tolerance assessments for bonded composite doublers. This work has produced significant interest from airlines and aircraft manufacturers. The successful Pilot Program produced flight performance history to establish the durability of bonded composite patches as a permanent repair on commercial aircraft structures. This report discusses both the laboratory data and Pilot Program results from repair installations on operating aircraft to introduce composite doubler repairs into mainstream commercial aircraft use.

  14. Implementation of Section 1072 of the National Defense Authorization Act for Fiscal Year 2008

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2009-08-12T23:59:59.000Z

    This Notice provides guidance for implementing the mandates of Section 1072 of the National Defense Authorization Act for Fiscal Year 2008, commonly referred to as the Bond Amendment. Extended until 9-28-11 by DOE N 251.90 dated 9-28-10. Canceled by DOE O 472.2. Does not cancel other directives.

  15. Vacuum fusion bonded glass plates having microstructures thereon

    DOE Patents [OSTI]

    Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  16. Structural behavior of silicone bonded glass block panels

    SciTech Connect (OSTI)

    Chang, K.F. [Structural Engineering Associates, Inc., San Antonio, TX (United States); Sandberg, L.B. [Michigan Technological Univ. Houghton, MI (United States)

    1996-12-31T23:59:59.000Z

    Silicone sealant was submitted for mortar in bonding glass blocks. The sealant`s tensile and shear strengths and stiffnesses were determined. Joints bonding two glass blocks were tested for stiffness and strength in tension, bending, out-of-plane shear, and in-plane shear. Bending tests were done on specimens one block wide and four blocks long to evaluate one-way bending behavior. A six block by six block panel, supported on all four sides, was built and tested under simulated wind load. An analytical model with material nonlinearity in the joints was developed for the one-way bending case. It gave good comparisons with the experimental data to load levels approaching failure. A more complex analytical model was developed for the two-way panel. It was only valid for lower load levels, in the range of potential allowable design loads, but compared well with test results. Silicone bonded glass block panels have potential for meeting the wind load requirements necessary for exterior use.

  17. Intermetallic compound formation at Cu-Al wire bond interface

    SciTech Connect (OSTI)

    Bae, In-Tae; Young Jung, Dae [Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902 (United States); Chen, William T.; Du Yong [Advanced Semiconductor Engineering Inc., 1255 E Arques Ave, Sunnyvale, California 94085 (United States)

    2012-12-15T23:59:59.000Z

    Intermetallic compound (IMC) formation and evolution at Cu-Al wire bond interface were studied using focused ion beam /scanning electron microscopy, transmission electron microscopy (TEM)/energy dispersive x-ray spectroscopy (EDS), nano beam electron diffraction (NBED) and structure factor (SF) calculation. It was found that discrete IMC patches were formed at the Cu/Al interface in as-packaged state and they grew toward Al pad after high temperature storage (HTS) environment at 150 Degree-Sign C. TEM/EDS and NBED results combined with SF calculation revealed the evidence of metastable {theta} Prime -CuAl{sub 2} IMC phase (tetragonal, space group: I4m2, a = 0.404 nm, c= 0.580 nm) formed at Cu/Al interfaces in both of the as-packaged and the post-HTS samples. Two feasible mechanisms for the formation of the metastable {theta} Prime -CuAl{sub 2} phase are discussed based on (1) non-equilibrium cooling of wire bond that is attributed to highly short bonding process time and (2) the epitaxial relationships between Cu and {theta} Prime -CuAl{sub 2}, which can minimize lattice mismatch for {theta} Prime -CuAl{sub 2} to grow on Cu.

  18. Effect of hydrogen bond cooperativity on the behavior of water

    E-Print Network [OSTI]

    Kevin Stokely; Marco G. Mazza; H. Eugene Stanley; Giancarlo Franzese

    2009-08-27T23:59:59.000Z

    Four scenarios have been proposed for the low--temperature phase behavior of liquid water, each predicting different thermodynamics. The physical mechanism which leads to each is debated. Moreover, it is still unclear which of the scenarios best describes water, as there is no definitive experimental test. Here we address both open issues within the framework of a microscopic cell model by performing a study combining mean field calculations and Monte Carlo simulations. We show that a common physical mechanism underlies each of the four scenarios, and that two key physical quantities determine which of the four scenarios describes water: (i) the strength of the directional component of the hydrogen bond and (ii) the strength of the cooperative component of the hydrogen bond. The four scenarios may be mapped in the space of these two quantities. We argue that our conclusions are model-independent. Using estimates from experimental data for H bond properties the model predicts that the low-temperature phase diagram of water exhibits a liquid--liquid critical point at positive pressure.

  19. Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids with small bond angles: Effects of steric hindrance and ring formation

    SciTech Connect (OSTI)

    Marshall, Bennett D., E-mail: bennettd1980@gmail.com; Haghmoradi, Amin; Chapman, Walter G. [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)] [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)

    2014-04-28T23:59:59.000Z

    In this paper we develop a thermodynamic perturbation theory for two site associating fluids which exhibit bond cooperativity (system energy is non-pairwise additive). We include both steric hindrance and ring formation such that the equation of state is bond angle dependent. Here, the bond angle is the angle separating the centers of the two association sites. As a test, new Monte Carlo simulations are performed, and the theory is found to accurately predict the internal energy as well as the distribution of associated clusters as a function of bond angle.

  20. Validation of bonded composite doubler technology through application oriented structural testing

    SciTech Connect (OSTI)

    Roach, D.; Graf, D.

    1996-08-01T23:59:59.000Z

    One of the major thrusts established under the FAA`s National Aging Aircraft Research Program is to foster new technologies associated with civil aircraft maintenance. Recent DOD and other government developments in the use of bonded composite patches on metal structures has supported the need for research and validation of such doubler applications on U.S. certificated airplanes. Composite patching is a rapidly maturing technology which shows promise of cost savings on aging aircraft. Sandia Labs is conducting a proof-of-concept project with Delta Air Lines, Lockheed Martin, Textron, and the FAA which seeks to remove any remaining obstacles to the approved use of composite doublers. By focusing on a specific commercial aircraft application - reinforcement of the L-1011 door frame - and encompassing all {open_quotes}cradle-to-grave{close_quotes} tasks such as design, analysis, installation, and inspection, this program is designed to prove the capabilities of composite doublers. This paper reports on a series of structural tests which have been conducted on coupons and subsize test articles. Tension-tension fatigue and residual strength tests attempted to grow engineered flaws in coupons with composite doublers bonded to aluminum skin. Also, structures which modeled key aspects of the door corner installation were subjected to extreme tension, shear, and bending loads. In this manner it was possible to study strain fields in and around the Lockheed-designed composite doubler using realistic aircraft load scenarios and to assess the potential for interply delaminations and disbonds between the aluminum and the laminate. The data acquired was also used to validate finite element models (FEM) and associated Damage Tolerance Analyses.

  1. The Breathing Orbital Valence Bond Method in Diffusion Monte Carlo: C-H Bond Dissociation ofAcetylene

    SciTech Connect (OSTI)

    Domin, D.; Braida, Benoit; Lester Jr., William A.

    2008-05-30T23:59:59.000Z

    This study explores the use of breathing orbital valence bond (BOVB) trial wave functions for diffusion Monte Carlo (DMC). The approach is applied to the computation of the carbon-hydrogen (C-H) bond dissociation energy (BDE) of acetylene. DMC with BOVB trial wave functions yields a C-H BDE of 132.4 {+-} 0.9 kcal/mol, which is in excellent accord with the recommended experimental value of 132.8 {+-} 0.7 kcal/mol. These values are to be compared with DMC results obtained with single determinant trial wave functions, using Hartree-Fock orbitals (137.5 {+-} 0.5 kcal/mol) and local spin density (LDA) Kohn-Sham orbitals (135.6 {+-} 0.5 kcal/mol).

  2. Single versus double bond breakage in a Morse chain under tension: higher index saddles and bond healing

    E-Print Network [OSTI]

    F. A. L. Mauguiere; P. Collins; G. S. Ezra; S. Wiggins

    2012-12-11T23:59:59.000Z

    We investigate the fragmentation dynamics of an atomic chain under tensile stress. We have classified the location, stability type (indices) and energy of all equilibria for the general $n$-particle chain, and have highlighted the importance of saddle points with index $> 1$. We show that for an $n=2$-particle chain under tensile stress the index 2 saddle plays a central role in organizing the dynamics. We apply normal form theory to analyze phase space structure and dynamics in a neighborhood of the index 2 saddle. We define a phase dividing surface (DS) that enables us to classify trajectories passing through a neighborhood of the saddle point using the values of the integrals associated with the normal form. We also generalize our definition of the dividing surface and define an \\emph{extended dividing surface} (EDS), which is used to sample and classify all trajectories that pass through a phase space neighborhood of the index 2 saddle at total energies less than that of the saddle. Classical trajectory simulations are used to study single versus double bond breakage for the $n=2$ chain under tension. Initial conditions for trajectories are obtained by sampling the EDS at constant energy. We sample trajectories at fixed energies both above and below the energy of the saddle. The fate of trajectories (single versus double bond breakage) is explored as a function of the location of the initial condition on the EDS, and a connection made to the work of Chesnavich on collision-induced dissociation. A significant finding is that we can readily identify trajectories that exhibit bond \\emph{healing}. Such trajectories pass outside the nominal (index 1) transition state for single bond dissociation, but return to the potential well region, possibly several times, before ultimately dissociating.

  3. Pacific Northwest National Laboratory

    E-Print Network [OSTI]

    Pacific Northwest National Laboratory Operated by Battelle for the U.S. Department of Energy Northwest National Laboratory (PNNL) operated by Battelle Memorial Institute. Battelle has a unique contract

  4. Argonne National Laboratory's Nondestructive

    E-Print Network [OSTI]

    Kemner, Ken

    Argonne National Laboratory's Nondestructive Evaluation Technologies NDE #12;Over45yearsexperienceinNondestructiveEvaluation... Argonne National Laboratory's world-renowned researchers have a proven the safe operationof advanced nuclear reactors. Argonne's World-Class Nondestructive Evaluation

  5. Mentoring | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    As one of the largest laboratories in the nation for science and engineering research, Argonne National Laboratory is home to some of the most prolific and well-renowned scientists...

  6. National Energy Education Summit

    Broader source: Energy.gov [DOE]

    The National Energy Education Summit is organized by the Council of Energy Research and Education Leaders (CEREL) and will serve as a first-of-its-kind national forum for energy educators, subject...

  7. Sandia National Laboratories: Facilities

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory (PSEL) National Supervisory Control and Data Acquisition (SCADA) Test Bed Center for Integrated Nanotechnologies (CINT) Distributed Energy Technologies Laboratory...

  8. National Hydropower Map

    Broader source: Energy.gov [DOE]

    High-resolution map produced by Oak Ridge National Laboratory showing hydropower resources throughout the United States.

  9. National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FROM: SUBJECT: USIUK Memorandum of Understanding between National Nuclear Security Administration's (NNSA) Associate Administrator for Defense Nuclear Security (AADNS)...

  10. Sandia National Laboratories: AREVA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Concentrating Solar Power, Energy, Energy Storage, Facilities, National Solar Thermal Test Facility, News, News & Events, Partnership, Renewable Energy, Research &...

  11. CX-000268: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    High Efficiency, Low-Cost, Multijunction Solar Cells Based on Epitaxial Liftoff and Wafer Bonding; National Renewable Energy Laboratory Tracking Number 09-041CX(s) Applied: B3.6Date: 12/28/2009Location(s): IllinoisOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  12. Sandia National Laboratories: National Rotor Testbed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy, SWIFT, Systems Analysis, Wind Energy The National Rotor Testbed (NRT) team is examining the effect of airfoil choice on the final design of the new rotor for the Scaled...

  13. NATIONAL HYDROGEN ENERGY ROADMAP

    E-Print Network [OSTI]

    NATIONAL HYDROGEN ENERGY ROADMAP NATIONAL HYDROGEN ENERGY ROADMAP . . Toward a More Secure and Cleaner Energy Future for America Based on the results of the National Hydrogen Energy Roadmap Workshop to make it a reality. This Roadmap provides a framework that can make a hydrogen economy a reality

  14. adhesive bonded joints: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 1981,193 joint ventures with the par- ticipation of Japanese capital were operating in 47 nations 153 Joint Degrees & Promotion towards European Students Computer...

  15. adhesively bonded joints: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 1981,193 joint ventures with the par- ticipation of Japanese capital were operating in 47 nations 153 Joint Degrees & Promotion towards European Students Computer...

  16. MONOLITHIC FUEL FABRICATION PROCESS DEVELOPMENT AT THE IDAHO NATIONAL LABORATORY_

    SciTech Connect (OSTI)

    G. A. Moore; F. J. Rice; N. E. Woolstenhulme; J-F. Jue; B. H. Park; S. E. Steffler; N. P. Hallinan; M. D. Chapple; M. C. Marshall; B. L. Mackowiak; C. R. Clark; B. H. Rabin

    2009-11-01T23:59:59.000Z

    Full-size/prototypic U10Mo monolithic fuel-foils and aluminum clad fuel plates are being developed at the Idaho National Laboratory’s (INL) Materials and Fuels Complex (MFC). These efforts are focused on realizing Low Enriched Uranium (LEU) high density monolithic fuel plates for use in High Performance Research and Test Reactors. The U10Mo fuel foils under development afford a fuel meat density of ~16 gU/cc and thus have the potential to facilitate LEU conversions without any significant reactor-performance penalty. An overview is provided of the ongoing monolithic UMo fuel development effort, including application of a zirconium barrier layer on fuel foils, fabrication scale-up efforts, and development of complex/graded fuel foils. Fuel plate clad bonding processes to be discussed include: Hot Isostatic Pressing (HIP) and Friction Bonding (FB).

  17. Bond strength of cementitious borehole plugs in welded tuff

    SciTech Connect (OSTI)

    Akgun, H.; Daemen, J.J.K. [Arizona Univ., Tucson, AZ (USA). Dept. of Mining and Geological Engineering

    1991-02-01T23:59:59.000Z

    Axial loads on plugs or seals in an underground repository due to gas, water pressures and temperature changes induced subsequent to waste and plug emplacement lead to shear stresses at the plug/rock contact. Therefore, the bond between the plug and rock is a critical element for the design and effectiveness of plugs in boreholes, shafts or tunnels. This study includes a systematic investigation of the bond strength of cementitious borehole plugs in welded tuff. Analytical and numerical analysis of borehole plug-rock stress transfer mechanics is performed. The interface strength and deformation are studied as a function of Young`s modulus ratio of plug and rock, plug length and rock cylinder outside-to-inside radius ratio. The tensile stresses in and near an axially loaded plug are analyzed. The frictional interface strength of an axially loaded borehole plug, the effect of axial stress and lateral external stress, and thermal effects are also analyzed. Implications for plug design are discussed. The main conclusion is a strong recommendation to design friction plugs in shafts, drifts, tunnels or boreholes with a minimum length to diameter ratio of four. Such a geometrical design will reduce tensile stresses in the plug and in the host rock to a level which should minimize the risk of long-term deterioration caused by excessive tensile stresses. Push-out tests have been used to determine the bond strength by applying an axial load to cement plugs emplaced in boreholes in welded tuff cylinders. A total of 130 push-out tests have been performed as a function of borehole size, plug length, temperature, and degree of saturation of the host tuff. The use of four different borehole radii enables evaluation of size effects. 119 refs., 42 figs., 20 tabs.

  18. Fuel cell system with separating structure bonded to electrolyte

    DOE Patents [OSTI]

    Bourgeois, Richard Scott (Albany, NY); Gudlavalleti, Sauri (Albany, NY); Quek, Shu Ching (Clifton Park, NY); Hasz, Wayne Charles (Pownal, VT); Powers, James Daniel (Santa Monica, CA)

    2010-09-28T23:59:59.000Z

    A fuel cell assembly comprises a separating structure configured for separating a first reactant and a second reactant wherein the separating structure has an opening therein. The fuel cell assembly further comprises a fuel cell comprising a first electrode, a second electrode, and an electrolyte interposed between the first and second electrodes, and a passage configured to introduce the second reactant to the second electrode. The electrolyte is bonded to the separating structure with the first electrode being situated within the opening, and the second electrode being situated within the passage.

  19. Chemical bond and entanglement of electrons in the hydrogen molecule

    E-Print Network [OSTI]

    Nikos Iliopoulos; Andreas F. Terzis

    2014-08-01T23:59:59.000Z

    We theoretically investigate the quantum correlations (in terms of concurrence of indistinguishable electrons) in a prototype molecular system (hydrogen molecule). With the assistance of the standard approximations of the linear combination of atomic orbitals and the con?guration interaction methods we describe the electronic wavefunction of the ground state of the H2 molecule. Moreover, we managed to ?find a rather simple analytic expression for the concurrence (the most used measure of quantum entanglement) of the two electrons when the molecule is in its lowest energy. We have found that concurrence does not really show any relation to the construction of the chemical bond.

  20. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (NextTime-Resolved Study of Bonding in Liquid

  1. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (NextTime-Resolved Study of Bonding in

  2. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (NextTime-Resolved Study of Bonding

  3. Title 43 CFR 3104 Bonds | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolarTharaldson EthanolTillson,OpenOpen|Amendment JumpBonds Jump to:

  4. Bond County, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass ConversionsSouthby 2022 |BleckleyMotionBocaBond County, Illinois: Energy

  5. Development of a Microfabricated Silicon Motor-Driven Compression System

    E-Print Network [OSTI]

    Frechette, Luc G.

    silicon microturbine rotor enclosed in a bonded stack of ve deep reactive ion etched wafers. They were

  6. 840 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003 Electrolyte-Based On-Demand and

    E-Print Network [OSTI]

    Lin, Liwei

    - ample, MIT's microturbine project uses a six-wafer bonding process that is not compatible with most

  7. Nitrogen-tuned bonding mechanism of Li and Ti adatom embedded graphene

    SciTech Connect (OSTI)

    Lee, Sangho; Chung, Yong-Chae, E-mail: yongchae@hanyang.ac.kr

    2013-09-15T23:59:59.000Z

    The effects of nitrogen defects on the bonding mechanism and resultant binding energy between the metal and graphene layer were investigated using density functional theory (DFT) calculations. For the graphitic N-doped graphene, Li adatom exhibited ionic bonding character, while Ti adatom showed features of covalent bonding similar to that of pristine graphene. However, in the cases of pyridinic and pyrrolic structures, partially covalent bonding characteristic occurred around N atoms in the process of binding with metals, and this particular bond formation enhanced the bond strength of metal on the graphene layer as much as it exceeded the cohesive energy of the metal bulk. Thus, Li and Ti metals are expected to be dispersed with atomic accuracy on the pyridinic and pyrrolic N-doped graphene layers. These results demonstrate that the bonding mechanism of metal–graphene complex can change according to the type of N defect, and this also affects the binding results. - Graphical abstract: Display Omitted - Highlights: • Nitrogen defects changed the bonding mechanism between metal and graphene. • Bonding character and binding results were investigated using DFT calculations. • Covalent bonding character occurred around pyridinic and pyrrolic N-doped graphene. • Pyridinic and pyrrolic N atoms are effective for metal dispersion on the graphene.

  8. IEEE TRANSACTIONS ON ADVANCED PACKAGING, VOL. 32, NO. 2, MAY 2009 461 Ultrasonic Bonding for MEMS Sealing and Packaging

    E-Print Network [OSTI]

    Lin, Liwei

    utilizing the solid phase vibration and welding process to bond two elements rapidly at low temperature. Two purely mechanical vibration energy to enable low temperature bonding between similar or dissimilar bonding process used tens of Watts at room temperature environment and the bonds were accomplished within

  9. A theory for calculating the surface-adsorbate bond dissociation energy from collision-induced desorption threshold measurements

    E-Print Network [OSTI]

    Levis, Robert J.

    to determine surface-adsorbate bond energies.3 Here we present a new model for determin- ing the bondA theory for calculating the surface-adsorbate bond dissociation energy from collision is presented for determining the bond dissociation energy, Do, of a surface-adsorbate complex from collision

  10. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 21, NO. 2, APRIL 2012 497 Rapid Silicon-to-Steel Bonding by Induction

    E-Print Network [OSTI]

    Lin, Liwei

    , thermocompressive diffusion bonding has been demonstrated for the bonding of sil- icon nitride to steel [1], [2-to-Steel Bonding by Induction Heating for MEMS Strain Sensors Brian D. Sosnowchik, Robert G. Azevedo, Member, IEEE and manufacturable technique to bond sil- icon to steel for microelectromechanical system (MEMS) sensor applications

  11. Sandia National Laboratories: Renewable Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    10, 2012, in Concentrating Solar Power, EC, National Solar Thermal Test Facility, Renewable Energy Dr. David Danielson visited Sandia National Laboratories and toured the National...

  12. IMPACT OF CAPILLARY AND BOND NUMBERS ON RELATIVE PERMEABILITY

    SciTech Connect (OSTI)

    Kishore K. Mohanty

    2002-09-30T23:59:59.000Z

    Recovery and recovery rate of oil, gas and condensates depend crucially on their relative permeability. Relative permeability in turn depends on the pore structure, wettability and flooding conditions, which can be represented by a set of dimensionless groups including capillary and bond numbers. The effect of flooding conditions on drainage relative permeabilities is not well understood and is the overall goal of this project. This project has three specific objectives: to improve the centrifuge relative permeability method, to measure capillary and bond number effects experimentally, and to develop a pore network model for multiphase flows. A centrifuge has been built that can accommodate high pressure core holders and x-ray saturation monitoring. The centrifuge core holders can operate at a pore pressure of 6.9 MPa (1000 psi) and an overburden pressure of 17 MPa (2500 psi). The effect of capillary number on residual saturation and relative permeability in drainage flow has been measured. A pore network model has been developed to study the effect of capillary numbers and viscosity ratio on drainage relative permeability. Capillary and Reynolds number dependence of gas-condensate flow has been studied during well testing. A method has been developed to estimate relative permeability parameters from gas-condensate well test data.

  13. Cognitive Informatics, Pacific Northwest National Laboratory | National

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTubahq.na.gov Office of theNuclearNanotechnologies | NationalNuclear

  14. Sandia National Laboratories | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14 FEDERALAmerica HighSTART Signed | National|Operations /

  15. Sandia National Laboratories | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14 FEDERALAmerica HighSTART Signed | National|Operations /Allison

  16. Sandia National Laboratories | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14 FEDERALAmerica HighSTART Signed | National|Operations

  17. Sandia National Laboratories | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14 FEDERALAmerica HighSTART Signed | National|OperationsSandia

  18. Sandia National Laboratory | National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del Sol HomeFacebook Twitter YouTubeCenters:FacebookContractor/Bidder| National Nuclear

  19. Noel C. MacDonald Fred Kavli Chair for MEMS

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    Micro-mirror Array Ti/Au -Bonding Titanium Waveguide/relay & Wafer ­scale package Introduction · Ti Packaging #12;UCSB 3D Ti MEMS · Through- etch titanium wafer · Deposit gold on mating surfaces · Bond Wafers be processed using power metallurgy. ·Ti can be joined by fusion welding, brazing, adhesives, diffusion bonding

  20. Studies of IBL wire bonds operation in a ATLAS-like magnetic field.

    E-Print Network [OSTI]

    Alvarez Feito, D; Mandelli, B

    2015-01-01T23:59:59.000Z

    At the Large Hadron Collider (LHC) experiments, most of silicon detectors use wire bonds to connect front-end chips and sensors to circuit boards for the data and service trans- missions. These wire bonds are operated in strong magnetic field environments and if time varying currents pass through them with frequencies close to their mechanical resonance frequency, strong resonant oscillations may occur. Under certain conditions, this effect can lead to fatigue stress and eventually breakage of wire bonds. During the first LHC Long Shutdown, the ATLAS Pixel Detector has been upgraded with the addition of a fourth innermost layer, the Insertable B-Layer (IBL), which has more than 50000 wire bonds operated in the ATLAS 2 T magnetic field. The results of systematic studies of operating wire bonds under IBL-like conditions are presented. Two different solutions have been investigated to minimize the oscillation amplitude of wire bonds.