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Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Wafer-Level Thermocompression Bonds  

E-Print Network [OSTI]

Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile ...

Tsau, Christine H.

2

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads  

DOE Patents [OSTI]

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

2013-12-03T23:59:59.000Z

3

Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers  

E-Print Network [OSTI]

microscopy, profilometer and wafer bow measurements. Plasma-activated direct bonding of DOI wafers to thermalPlasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon (CMP) on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. Our results

Akin, Tayfun

4

Wafer bonded epitaxial templates for silicon heterostructures  

DOE Patents [OSTI]

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcubera I (Paris, FR)

2008-03-11T23:59:59.000Z

5

Chemical strategies for die/wafer submicron alignment and bonding.  

SciTech Connect (OSTI)

This late-start LDRD explores chemical strategies that will enable sub-micron alignment accuracy of dies and wafers by exploiting the interfacial energies of chemical ligands. We have micropatterned commensurate features, such as 2-d arrays of micron-sized gold lines on the die to be bonded. Each gold line is functionalized with alkanethiol ligands before the die are brought into contact. The ligand interfacial energy is minimized when the lines on the die are brought into registration, due to favorable interactions between the complementary ligand tails. After registration is achieved, standard bonding techniques are used to create precision permanent bonds. We have computed the alignment forces and torque between two surfaces patterned with arrays of lines or square pads to illustrate how best to maximize the tendency to align. We also discuss complex, aperiodic patterns such as rectilinear pad assemblies, concentric circles, and spirals that point the way towards extremely precise alignment.

Martin, James Ellis; Baca, Alicia I.; Chu, Dahwey; Rohwer, Lauren Elizabeth Shea

2010-09-01T23:59:59.000Z

6

Highly Efficient Vertical Outgassing Channels for Robust, Void-Free, Low-Temperature Direct Wafer Bonding  

E-Print Network [OSTI]

molecules diffusion at bonding interface to VOCs. Conventional anneal time of 12-18 hours required to bond Bonding Di Liang1 , Erik A. Lucero2 , John E. Bowers1 1 Department of Electrical and Computer Engineering wafer bonding is favored for dissimilar materials integration, particularly in III-V compound

Bowers, John

7

Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding  

SciTech Connect (OSTI)

The single twin boundary with crystallographic orientation relationship (1{sup Ż}1{sup Ż}1{sup Ż})//(111) [01{sup Ż}1]//[011{sup Ż}] was created by wafer bonding. Electron diffraction patterns and high-resolution transmission electron microscopy images demonstrated the well control of the rotation angle between the bonded pair. At the twin boundary, one unit of wurtzite structure was found between two zinc-blende matrices. High-angle annular dark-field scanning transmission electron microscopy images showed Cd- and Te-terminated for the two bonded portions, respectively. The I-V curve across the twin boundary showed increasingly nonlinear behavior, indicating a potential barrier at the bonded twin boundary.

Sun, Ce; Lu, Ning; Wang, Jinguo; Lee, Jihyung; Peng, Xin; Kim, Moon J., E-mail: moonkim@utdallas.edu [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States); Klie, Robert F. [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)] [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2013-12-16T23:59:59.000Z

8

Propagation of guided Lamb waves in bonded specimens using piezoelectric wafer active sensors  

E-Print Network [OSTI]

Propagation of guided Lamb waves in bonded specimens using piezoelectric wafer active sensors and principles used for generation and propagation of ultrasonic guided waves (Lamb waves) using piezoelectric wafer active sensors (PWAS). Keywords: Ultrasonic, Lamb waves, Damage detection, NDE, Wave propagation

Giurgiutiu, Victor

9

Eutectic bonding of a Ti sputter coated, carbon aerogel wafer to a Ni foil  

SciTech Connect (OSTI)

The formation of high energy density, storage devices is achievable using composite material systems. Alternate layering of carbon aerogel wafers and Ni foils with rnicroporous separators is a prospective composite for capacitor applications. An inherent problem exists to form a physical bond between Ni and the porous carbon wafer. The bonding process must be limited to temperatures less than 1000{degrees}C, at which point the aerogel begins to degrade. The advantage of a low temperature eutectic in the Ni-Ti alloy system solves this problem. Ti, a carbide former, is readily adherent as a sputter deposited thin film onto the carbon wafer. A vacuum bonding process is then used to join the Ni foil and Ti coating through eutectic phase formation. The parameters required for successfld bonding are described along with a structural characterization of the Ni foil-carbon aerogel wafer interface.

Jankowski, A.F.; Hayes, J.P.; Kanna, R.L.

1994-06-01T23:59:59.000Z

10

Wafer Bonding and Layer Transfer Processes for High Efficiency Solar Cells  

SciTech Connect (OSTI)

A wafer-bonded four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga0.5In0.5P subcells that could reach one-sun AM0 efficiencies of 35.4% is described. The design relies on wafer-bonding and layer transfer for integration of non-lattice-matched subcells. Wafer bonding and layer transfer processes have shown promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga0.5In0.5P subcells. Additionally, wafer bonded Ge/Si substrates offer the possibility to improve the mechanical performance of existing triple-junction solar cell designs, while simultaneously reducing their cost. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current-voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 W?cm2 for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.

Zahler, J. M.; Fontcuberta i Morral, A.; Ahn, C. G.; Atwater, H. A.; Wanlass, M. W.; Chu, C.; Iles, P. A.

2003-05-01T23:59:59.000Z

11

Wafer bonded virtual substrate and method for forming the same  

DOE Patents [OSTI]

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcuberta i (Paris, FR)

2007-07-03T23:59:59.000Z

12

Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation  

E-Print Network [OSTI]

subcells InGaAsP, InGaAs via direct wafer bonding.8 In order to monolithically interconnect between the top materials, enable increased conversion efficiency due to the higher absorption efficiency obtained from. The additional layer reduces the incident light inten- sity because of the free carrier absorption. A wafer

Atwater, Harry

13

MATERIALS INTEGRATION FOR HIGH- PERFORMANCE PHOTOVOLTAICS BY WAFER BONDING  

E-Print Network [OSTI]

No thesis is an individual endeavor, and this thesis would not have been possible without the assistance of my collaborators and advisor and would have been unendurable without the support of my coworkers, friends, and family. I apologize in advance to anyone whom I might omit in this brief acknowledgement, but it is late and I am running out of time! In the summer of 2000, Harry Atwater agreed to allow me to transfer to his group from the chemical engineering department. I was discouraged and doubtful about my future at Caltech and in graduate school in general. Since giving me that chance he has been a great advisor with no shortage of encouragement or ideas. I am never sure if this is by design, but Harry has managed to inspire me to work hard and has given me countless ideas to pursue while always allowing me to feel that I have nearly complete freedom to pursue experiments that are interesting to me. While in Harry’s group I had the good fortune to work closely with two post-doctoral scholars, Chang-Geun Ahn and Anna Fontcuberta i Morral. Chang-Geun was extremely helpful in getting the Ge/Si bonding project going and in optical and electrical characterization experiments. Anna was tough to work with because her energy level is so darned high, but she has also been very supportive and her high energy approach to research has pushed me to work

James Michael Zahler; James Michael Zahler

2005-01-01T23:59:59.000Z

14

Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance  

SciTech Connect (OSTI)

This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.

C.A. Wang; P.G. Murphy; P.W. O'Brien; D.A. Shiau; A.C. Anderson; Z.L. Liau; D.M. Depoy; G. Nichols

2002-08-12T23:59:59.000Z

15

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells  

E-Print Network [OSTI]

-bonded multi-junction solar cells Dietrich Häussler a , Lothar Houben b , Stephanie Essig c , Mert Kurttepeli online 20 July 2013 Keywords: Multi-junction solar cell Wafer bonding Interfaces Aberration corrected and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar

Dunin-Borkowski, Rafal E.

16

Integrated optical MEMS using through-wafer vias and bump-bonding.  

SciTech Connect (OSTI)

This LDRD began as a three year program to integrate through-wafer vias, micro-mirrors and control electronics with high-voltage capability to yield a 64 by 64 array of individually controllable micro-mirrors on 125 or 250 micron pitch with piston, tip and tilt movement. The effort was a mix of R&D and application. Care was taken to create SUMMiT{trademark} (Sandia's ultraplanar, multilevel MEMS technology) compatible via and mirror processes, and the ultimate goal was to mate this MEMS fabrication product to a complementary metal-oxide semiconductor (CMOS) electronics substrate. Significant progress was made on the via and mirror fabrication and design, the attach process development as well as the electronics high voltage (30 volt) and control designs. After approximately 22 months, the program was ready to proceed with fabrication and integration of the electronics, final mirror array, and through wafer vias to create a high resolution OMEMS array with individual mirror electronic control. At this point, however, mission alignment and budget constraints reduced the last year program funding and redirected the program to help support the through-silicon via work in the Hyper-Temporal Sensors (HTS) Grand Challenge (GC) LDRD. Several months of investigation and discussion with the HTS team resulted in a revised plan for the remaining 10 months of the program. We planned to build a capability in finer-pitched via fabrication on thinned substrates along with metallization schemes and bonding techniques for very large arrays of high density interconnects (up to 2000 x 2000 vias). Through this program, Sandia was able to build capability in several different conductive through wafer via processes using internal and external resources, MEMS mirror design and fabrication, various bonding techniques for arrayed substrates, and arrayed electronics control design with high voltage capability.

McCormick, Frederick Bossert; Frederick, Scott K.

2008-01-01T23:59:59.000Z

17

SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)  

E-Print Network [OSTI]

­8 or Ge condensation during SiGe oxidation.9 In these approaches, the relaxed SGOI layer serves as a ten chemical mechanical polishing step to elimi- nate the surface crosshatch roughness induced by the com a hydrophilic surface preparation treatment, the implanted structure was wafer bonded to an oxidized Si handle

18

Wafer-level packaging with compression-controlled seal ring bonding  

DOE Patents [OSTI]

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

Farino, Anthony J

2013-11-05T23:59:59.000Z

19

Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-to-Silicon Photonic  

E-Print Network [OSTI]

required temperature for strong covalent bond for- mation and greater diffusion efficiency of gasLow-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III­V Compound Semiconductors-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2

Bowers, John

20

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si  

SciTech Connect (OSTI)

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup ?2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

2014-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

22

A Batch Wafer Scale LIGA Assembly and Packaging Technique vai Diffusion Bonding  

SciTech Connect (OSTI)

A technique using diffusion bonding (or solid-state welding) has been used to achieve batch fabrication of two- level nickel LIGA structures. Interlayer alignment accuracy of less than 1 micron is achieved using press-fit gauge pins. A mini-scale torsion tester was built to measure the diffusion bond strength of LIGA formed specimens that has shown successful bonding at temperatures of 450"C at 7 ksi pressure with bond strength greater than 100 Mpa. Extensions to this basic process to allow for additional layers and thereby more complex assemblies as well as commensurate packaging are discussed.

Christenson, T.R.; Schmale, D.T.

1999-01-27T23:59:59.000Z

23

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding  

SciTech Connect (OSTI)

We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 10{sup 6} have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.

Neubauer, H.; Hoffmann, S.; Kanbach, M.; Haber, J.; Kalbfleisch, S.; Krüger, S. P.; Salditt, T., E-mail: tsaldit@gwdg.de [Institut für Röntgenphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

2014-06-07T23:59:59.000Z

24

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer  

E-Print Network [OSTI]

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

Isaacson, David M.

25

High-? Al{sub 2}O{sub 3} material in low temperature wafer-level bonding for 3D integration application  

SciTech Connect (OSTI)

This work systematically investigated a high-? Al{sub 2}O{sub 3} material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al{sub 2}O{sub 3} layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300?°C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO{sub 2}), a higher interfacial adhesion energy (?11.93 J/m{sup 2}) and a lower helium leak rate (?6.84 × 10{sup ?10} atm.cm{sup 3}/sec) were detected for samples bonded using Al{sub 2}O{sub 3}. More importantly, due to the excellent thermal conductivity performance of Al{sub 2}O{sub 3}, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

Fan, J., E-mail: fanji@hust.edu.cn; Tu, L. C. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)] [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Tan, C. S. [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)] [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2014-03-15T23:59:59.000Z

26

Structured wafer for device processing  

SciTech Connect (OSTI)

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Okandan, Murat; Nielson, Gregory N

2014-11-25T23:59:59.000Z

27

Sandia National Laboratories: Diffusion Bonding Characterization  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

bond surface is poor or only the region near this corner Diffusion 7-8-9 Diffusion Welding and Brazing, Welding Handbook, 7th ed., American Welding Society, 1980, p 311-335...

28

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

29

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect (OSTI)

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

30

Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding  

SciTech Connect (OSTI)

Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.

Yu, X. [IHP (Germany); Vyvenko, O. [IHP/BTU Joint Lab (Germany); Kittler, M.; Seifert, W. [IHP (Germany); Mtchedlidze, T. [IHP/BTU Joint Lab (Germany); Arguirov, T. [IHP (Germany); Reiche, M. [MPI fuer Mikrostrukturphysik (Germany)

2007-04-15T23:59:59.000Z

31

Comparing systemic risk in European government bonds and national indices  

E-Print Network [OSTI]

It has been shown, that the systemic risk contained in financial markets can be indicated by the change of cross-correlation between different indices and stocks. This change is tracked by using principle component analysis (PCA). We use this technique to investigate the systemic risk contained in European economy by comparing government long term bonds and indices.

Jurczyk, Jan; Morgenstern, Ingo

2015-01-01T23:59:59.000Z

32

Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007  

SciTech Connect (OSTI)

We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

Atwater, H. A.

2008-11-01T23:59:59.000Z

33

InGaAsInP double heterostructures on InPSi templates fabricated by wafer bonding and hydrogen-induced exfoliation  

E-Print Network [OSTI]

. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 23 January 2003; accepted 3

Atwater, Harry

34

Three wafer stacking for 3D integration.  

SciTech Connect (OSTI)

Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

Greth, K. Douglas; Ford, Christine L.; Lantz, Jeffrey W.; Shinde, Subhash L.; Timon, Robert P.; Bauer, Todd M.; Hetherington, Dale Laird; Sanchez, Carlos Anthony

2011-11-01T23:59:59.000Z

35

Particulate contamination removal from wafers using plasmas and mechanical agitation  

DOE Patents [OSTI]

Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

Selwyn, G.S.

1998-12-15T23:59:59.000Z

36

Wafer characteristics via reflectometry  

DOE Patents [OSTI]

Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

Sopori, Bhushan L. (Denver, CO)

2010-10-19T23:59:59.000Z

37

Stable wafer-carrier system  

DOE Patents [OSTI]

One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

2013-10-22T23:59:59.000Z

38

Wafer screening device and methods for wafer screening  

DOE Patents [OSTI]

Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

Sopori, Bhushan; Rupnowski, Przemyslaw

2014-07-15T23:59:59.000Z

39

Silicon cast wafer recrystallization for photovoltaic applications  

E-Print Network [OSTI]

Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

Hantsoo, Eerik T. (Eerik Torm)

2008-01-01T23:59:59.000Z

40

Wafer Fusion for Integration of Semiconductor Materials and Devices  

SciTech Connect (OSTI)

We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

1999-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

42

976 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 15, NO. 4, AUGUST 2006 Methanol Steam Reformer on a Silicon Wafer  

E-Print Network [OSTI]

by wafer bonding. The reactor bed was subsequently filled with catalyst particles. Thermal control.2006.878888 Binary diffusion coefficient . Mixture diffusion coefficient . Knudsen diffusion coeffcient . Effective mixture diffusion coefficient for transport in catalyst pores . Diameter of catalyst pellet (m

Malen, Jonathan A.

43

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

44

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

45

NREL Core Program; Session: Wafer Silicon (Presentation)  

SciTech Connect (OSTI)

This project supports the Solar America Initiative by working on: (1) wafer Si accounts for 92% world-wide solar cell production; (2) research to fill the industry R and D pipeline for the issues in wafer Si; (3) development of industry collaborative research; (4) improvement of NREL tools and capabilities; and (5) strengthen US wafer Si research.

Wang, Q.

2008-04-01T23:59:59.000Z

46

Copper wafer bonding in three-dimensional integration  

E-Print Network [OSTI]

Three-dimensional (3D) integration, in which multiple layers of devices are stacked with high density of interconnects between the layers, offers solutions for problems when the critical dimensions in integrated circuits ...

Chen, Kuan-Neng, 1974-

2005-01-01T23:59:59.000Z

47

Three dimensional integration technology using copper wafer bonding  

E-Print Network [OSTI]

With 3-D integration, the added vertical component could theoretically increase the device density per footprint ratio of a given chip by n-fold, provide a means of heterogeneous integration of devices fabricated from ...

Fan, Andy, 1976-

2006-01-01T23:59:59.000Z

48

Albert Bond | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond - Project Officer, Golden Field Office Albert Bond is a Project Officer at the Golden Field Office. Most Recent New Choctaw Nation Recycling Center Posts Quick Results March 8...

49

Wafer scale micromachine assembly method  

DOE Patents [OSTI]

A method for fusing together, using diffusion bonding, micromachine subassemblies which are separately fabricated is described. A first and second micromachine subassembly are fabricated on a first and second substrate, respectively. The substrates are positioned so that the upper surfaces of the two micromachine subassemblies face each other and are aligned so that the desired assembly results from their fusion. The upper surfaces are then brought into contact, and the assembly is subjected to conditions suited to the desired diffusion bonding.

Christenson, Todd R. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

50

Methane production using resin-wafer electrodeionization  

DOE Patents [OSTI]

The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

2014-03-25T23:59:59.000Z

51

Porous solid ion exchange wafer for immobilizing biomolecules  

DOE Patents [OSTI]

A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

Arora, Michelle B. (Woodridge, IL); Hestekin, Jamie A. (Morton Grove, IL); Lin, YuPo J. (Naperville, IL); St. Martin, Edward J. (Libertyville, IL); Snyder, Seth W. (Lincolnwood, IL)

2007-12-11T23:59:59.000Z

52

Commercialization of low temperature copper thermocompression bonding for 3D integrated circuits  

E-Print Network [OSTI]

Wafer bonding is a key process and enabling technology for realization of three-dimensional integrated circuits (3DIC) with reduced interconnect delay and correspondingly increased circuit speed and decreased power ...

Nagarajan, Raghavan

2008-01-01T23:59:59.000Z

53

Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020—from $0.15 per kilowatt hour to less than $0.07. 1366’s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with today’s state-of-the-art technologies. 1366’s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366’s technology, the cost of silicon wafers could be reduced by 80%.

None

2010-01-15T23:59:59.000Z

54

Wafer-fused semiconductor radiation detector  

DOE Patents [OSTI]

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

55

Methanol Steam Reformer on a Silicon Wafer  

SciTech Connect (OSTI)

A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

2004-04-15T23:59:59.000Z

56

Optical cavity furnace for semiconductor wafer processing  

DOE Patents [OSTI]

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

57

Devices using resin wafers and applications thereof  

DOE Patents [OSTI]

Devices incorporating a thin wafer of electrically and ionically conductive porous material made by the method of introducing a mixture of a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material into a mold. The mixture is subjected to temperatures in the range of from about 60.degree. C. to about 170.degree. C. at pressures in the range of from about 0 to about 500 psig for a time in the range of from about 1 to about 240 minutes to form thin wafers. Devices include electrodeionization and separative bioreactors in the production of organic and amino acids, alcohols or esters for regenerating cofactors in enzymes and microbial cells.

Lin, YuPo J. (Naperville, IL); Henry, Michael P. (Batavia, IL); Snyder, Seth W. (Lincolnwood, IL); St. Martin, Edward (Libertyville, IL); Arora, Michelle (Woodridge, IL); de la Garza, Linda (Woodridge, IL)

2009-03-24T23:59:59.000Z

58

1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics  

SciTech Connect (OSTI)

The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the developments made under this program have increased 1366 confidence that Direct Wafers can be produced for ~$0.10/W, still nearly 50% lower than current industry best practice. Wafer quality also steadily improved throughout the program, both in electrical performance and geometry. The improvements to electrical performance were achieved through a combination of optimized heat transfer during growth, reduction of metallic impurities to below 10 ppbw total metals, and lowering oxygen content to below 2e17 atoms/cc. Wafer average thickness has been reduced below 200µm with standard deviation less than 20µm. Measurement of spatially varying thickness shortly after wafer growth is being used to continually improve uniformity by adjusting thermal conditions. At the conclusion of the program, 1366 has developed strong relationships with four leading Tier1 cell manufactures and several have demonstrated 17% cell efficiency on Direct Wafer. Sample volumes were limited, with the largest trial consisting of 300 Direct Wafers, and there remains strong pull for larger quantities necessary for qualification before sales contracts can be signed. This will be the focus of our pilot manufacturing scale up in 2014.

Lorenz, Adam [1366 Technologies] [1366 Technologies

2013-08-30T23:59:59.000Z

59

Argonne wins FLC award for resin wafer technology | Argonne National  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAbout theOFFICEAmesApplication2 (CRACAprilArgonneLaboratory wins FLC

60

asic wafer test: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

asic wafer test First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Testing specification for the wafer...

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells  

E-Print Network [OSTI]

9: Current vs voltage for various electrical test points of9. Current vs voltage for various electrical test points ofvs voltage (J-V) curves in Figure 11. Our observations indicated that sulfur passivation improves the electrical

Yeung, King Wah Sunny

2012-01-01T23:59:59.000Z

62

The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells  

E-Print Network [OSTI]

Efficiency of p?n Junction Solar Cells, J. Appl. Phys. 32,Inverted Triple- Junction Solar Cell with Two Independentlyof Thin-Film GaAs Solar Cells on Si Substrates, J. Appl.

Yeung, King Wah Sunny

2012-01-01T23:59:59.000Z

63

Phosphorus determination in borophosphosilicate or phosphosilicate glass films on a Si wafer by wavelength dispersive x-ray spectroscopy  

SciTech Connect (OSTI)

In this report, peak shift effects in the SiO{sub 2}/Si(100) system due to chemical bonding are demonstrated. The detailed development of the equations appears in a paper submitted for publication in the Journal of X-ray Spectroscopy. These equations are for the spectral line intensity of Si and P from BPSG films and from the Si in the Si(100) substrate. They are subsequently integrated into two simultaneous equations that can be solved for the phosphorus content and the surface density by a computer program using iterative methods. The general expressions for the BPSG films and the computer program are also applicable to PSG films by setting the boron content to zero. The new procedure was then tested by analysis of a well-defined and carefully prepared set of PSG wafer samples. Preliminary analyses were also made on BPSG wafers. 3 refs., 4 figs., 3 tabs.

Levine, H.S.; Higgins, K.L.

1990-01-01T23:59:59.000Z

64

Investing in Bonds  

E-Print Network [OSTI]

Bonds, which are issued by governments and corporations, can be an important part of one's investment portfolio. U.S. government bonds, municipal bonds, zero-coupon bonds and other types are described. Also learn strategies for coping with inflation...

Johnson, Jason; Polk, Wade

2002-08-12T23:59:59.000Z

65

Electrochemical method for defect delineation in silicon-on-insulator wafers  

DOE Patents [OSTI]

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

66

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

67

Financing Public Sector Projects with Clean Renewable Energy Bonds; Fact Sheet Series on Financing Renewable Energy Projects, National Renewable Energy Laboratory (NREL)  

SciTech Connect (OSTI)

Clean renewable energy bonds (CREBs) present a low-cost opportunity for public entities to issue bonds to finance renewable energy projects. The federal government lowers the cost of debt by providing a tax credit to the bondholder in lieu of interest payments from the issuer. Because CREBs are theoretically interest free, they may be more attractive than traditional tax-exempt municipal bonds. In February 2009, Congress appropriated a total of $2.4 billion for the "New CREBs" program. No more than one-third of the budget may be allocated to each of the eligible entities: governmental bodies, electric cooperatives, and public power providers. Applications for this round of "New CREBs" were due to the Internal Revenue Service (IRS) on August 4, 2009. There is no indication Congress will extend the CREBs program; thus going forward, only projects that are approved under the 2009 round will be able to issue CREBs. This factsheet explains the CREBs mechanism and provides guidance on procedures related to issuing CREBs.

Kreycik, C.; Couglin, J.

2009-12-01T23:59:59.000Z

68

High- and low-temperature bonding techniques for microstructures  

SciTech Connect (OSTI)

The ability to bond together two or more silicon wafers greatly expands the variety and complexity of silicon microstructures that can be designed and fabricated. At LLNL, microstructures have been used for many years as hardware in scientific experiments. The activity has recently been expanded into other areas to include microinstruments for biomedical applications and for chemical analysis. Both high temperature (1100{degrees}C) bonding techniques have been used, depending on the application. This paper discusses these applications with emphasis on the most extensive which is the fabrication of microchannel coolers for diode arrays.

Ciarlo, D.R.

1993-06-22T23:59:59.000Z

69

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, and S. Waters Oak Ridge National Laboratory This presentation does not contain any proprietary,...

70

Stresa, Italy, 25-27 April 2007 NOVEL BONDING TECHNOLOGIES FOR WAFER-LEVEL TRANSPARENT  

E-Print Network [OSTI]

OF MOEMS Herwig Kirchberger, Paul Lindner, Markus Wimplinger EV Group, A-4782 St. Florian, DI Erich), enjoys the potential to account for almost one third of the total MEMS sales by 2010, mainly driven annual growth rate (CAGR) of MEMS device sales of around 13% over the next 5 years, which is mainly

Boyer, Edmond

71

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies  

E-Print Network [OSTI]

First of all, I would like to thank my thesis adviser Harry Atwater for his great mentorship and guidance over the years. While he is an extremely busy professor holding about twenty students in his research group and a lot of domestic and international travels for seminars and conferences, he never hesitated to discuss with me when I knocked on his office’s door. Our discussion often went over 1 hour in his tight schedule, but he did not stop until we reached clear conclusions and decided what to do next. While he always tries to find the most effective way for experimental scheme, Harry one day told me that we engineers should always assume possible to fabricate whatever structure possible when I showed a hesitation for doing a complicated process, which preach is still and will be in my mind. It was also a great pleasure for me to work with the excellent members in the Atwater

Katsuaki Tanabe; Katsuaki Tanabe

2008-01-01T23:59:59.000Z

72

Disbond detection in adhesively-bonded structures using piezoelectric wafer active sensors  

E-Print Network [OSTI]

, Structural Health Monitoring, Damage Detection, NDE 1 INTRODUCTION With an increasing use of adhesively in this direction and nondestructive evaluation (NDE) methods are successfully used for damage detection and damage, guided waves used for NDE have shown encouraging results and are becoming more popular in the NDE field

Giurgiutiu, Victor

73

Surety Bond Program (Maryland)  

Broader source: Energy.gov [DOE]

The Surety Bond Program, a program of the Maryland Small Business Development Financing Authority, assists eligible small businesses in obtaining bid, performance or payment bonds necessary to...

74

Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness  

SciTech Connect (OSTI)

The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technology further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.

Fong, Theodore E.

2013-05-06T23:59:59.000Z

75

Embedded Ultrasonics NDE with Piezoelectric Wafer Active Sensors  

E-Print Network [OSTI]

Embedded Ultrasonics NDE with Piezoelectric Wafer Active Sensors Victor Giurgiutiu Department (NDE) is described. PWAS structure and principle of operation are presented. The interaction between exciting certain Lamb wave modes are identified. Recent trends in guided-wave ultrasonic NDE and damage

Giurgiutiu, Victor

76

Embedded NDE with Piezoelectric Wafer Active Sensors in Aerospace Applications  

E-Print Network [OSTI]

1 Embedded NDE with Piezoelectric Wafer Active Sensors in Aerospace Applications Victor Giurgiutiu (NDE) is explored. Laboratory tests are used to prove that PWAS can satisfactorily perform Lamb wave method. INTRODUCTION Embedded nondestructive evaluation (NDE) is an emerging technology that will allow

Giurgiutiu, Victor

77

Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas  

E-Print Network [OSTI]

Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas Natalia Y of capacitively coupled plasma reactors with a wafer-focus ring gap. The penetration of plasma generated species i.e., ions and radicals into the wafer-focus ring gap is discussed. We found that the penetration of plasma

Kushner, Mark

78

Bond Financing (New Jersey)  

Broader source: Energy.gov [DOE]

Bond financing is available to eligible businesses through the New Jersey Economic Development Authority, in the amount of $500,000 to $10 million. The bonds can be used to finance capital...

79

Local Government Revenue Bonds (Montana)  

Broader source: Energy.gov [DOE]

Limited obligation local government bonds ("special revenue bonds") may be issued for qualified electric energy generation facilities, including those powered by renewables. These bonds generally...

80

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model  

E-Print Network [OSTI]

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor-wafer, lamp-heated chemical vapor deposition system were used to study the wafer temperature response to gas composition. A physically based simulation procedure for the process gas and wafer temperature was developed

Rubloff, Gary W.

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Quantitative analysis of phosphosilicate glass films on silicon wafers  

SciTech Connect (OSTI)

We determined the phosphorus and silicon content of 6000 to 10,000A phosphosilicate glass films deposited on 5 cm diameter <100> silicon wafers. The thin film was removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si content of the solution was determined by inductively coupled plasma - atomic emission spectroscopy (ICP). The glass films had 86 to 530 ..mu..g P and 920 to 1700 ..mu..g Si. Assuming these two elements were in the film as P/sub 2/O/sub 5/ and SiO/sub 2/, the calculated weight percent of phosphorus in the film ranged from 2.2 to 12 wt % with an estimated uncertainty of 2.73 to 10.1 relative percent. These analyses will be used to determine the composition of standards which were prepared simultaneously with these samples. Results will aid in control of one step in a microcircuit fabrication process involving chemical vapor deposition of phosphosilicate glass on silicon wafers by determination of the P content per unit area for control samples using a Kevex x-ray fluorescence spectrometer.

Weissman, S.H.; Hallett, S.G.

1982-04-01T23:59:59.000Z

82

Bonding thermoplastic polymers  

DOE Patents [OSTI]

We demonstrate a new method for joining patterned thermoplastic parts into layered structures. The method takes advantage of case-II permeant diffusion to generate dimensionally controlled, activated bonding layers at the surfaces being joined. It is capable of producing bonds characterized by cohesive failure while preserving the fidelity of patterned features in the bonding surfaces. This approach is uniquely suited to production of microfluidic multilayer structures, as it allows the bond-forming interface between plastic parts to be precisely manipulated at micrometer length scales. The bond enhancing procedure is easily integrated in standard process flows and requires no specialized equipment.

Wallow, Thomas I. (Fremont, CA); Hunter, Marion C. (Livermore, CA); Krafcik, Karen Lee (Livermore, CA); Morales, Alfredo M. (Livermore, CA); Simmons, Blake A. (San Francisco, CA); Domeier, Linda A. (Danville, CA)

2008-06-24T23:59:59.000Z

83

Private Activity Revenue Bonds (Maryland)  

Broader source: Energy.gov [DOE]

Private Activity Revenue Bonds are available in the form of both taxable bonds and tax-exempt bonds. Both types of bonds provide access to long-term capital markets for fixed asset financing....

84

Sandia National Laboratories: Diffusion Bonding Characterization  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared0EnergySandia InvolvesDOE-BERPressure, Not

85

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing...

86

SciTech Connect: Passivated Tunneling Contacts to N-Type Wafer...  

Office of Scientific and Technical Information (OSTI)

Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint Citation Details In-Document Search Title: Passivated Tunneling...

87

Low-Cost Direct Bonded Aluminum (DBA) Substrates  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, M. L. Santella, and G. Muralidharan Oak Ridge National Laboratory (ORNL) This presentation does not...

88

Qualified Energy Conservation Bonds (QECBs) - State Issues &...  

Broader source: Energy.gov (indexed) [DOE]

Qualified Energy Conservation Bonds (QECBs) - State Issues & Approaches Qualified Energy Conservation Bonds (QECBs) - State Issues & Approaches Qualified Energy Conservation Bonds...

89

Bond Financing Program (New Hampshire)  

Broader source: Energy.gov [DOE]

BFA’s Bond Financing Program offers tax-exempt and taxable bonds for fixed-asset expansion projects. Industrial development revenue bonds can be used by manufacturers for the acquisition,...

90

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint  

SciTech Connect (OSTI)

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

Johnston, S.; Yan, F.; Zaunbracher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

91

Low Temperature Material Bonding Technique  

DOE Patents [OSTI]

A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

2000-10-10T23:59:59.000Z

92

Low temperature material bonding technique  

DOE Patents [OSTI]

A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

2002-02-12T23:59:59.000Z

93

Green Infrastructure Bonds (Hawaii)  

Broader source: Energy.gov [DOE]

In July 2013, Hawaii enacted legislation allowing the Department of Business, Economic Development, and Tourism to issue Green Infrastructure Bonds to secture low-cost financing for clean energy...

94

Bonding aerogels with polyurethanes  

SciTech Connect (OSTI)

Aerogels, porous silica glasses with ultra-fine cell size (30nm), are made by a solution gelation (sol-gel) process. The resulting gel is critical point dried to densities from 0.15--0.60 g/cc. This material is machinable, homogeneous, transparent, coatable and bondable. To bond aerogel an adhesive should have long cure time, no attack on the aerogel structure, and high strength. Several epoxies and urethanes were examined to determine if they satisfied these conditions. Bond strengths above 13 psi were found with double bubble and DP-110 epoxies and XI-208/ODA-1000 and Castall U-2630 urethanes. Hardman Kalex Tough Stuff'' A-85 hardness urethane gave 18 psi bond strength. Hardman A-85, Tuff-Stuff'' was selected for further evaluation because it produced bond strengths comparable to the adherend cohesive strength. 5 refs., 2 figs.

Matthews, F.M.; Hoffman, D.M.

1989-11-01T23:59:59.000Z

95

Water's Hydrogen Bond Strength  

E-Print Network [OSTI]

Water is necessary both for the evolution of life and its continuance. It possesses particular properties that cannot be found in other materials and that are required for life-giving processes. These properties are brought about by the hydrogen bonded environment particularly evident in liquid water. Each liquid water molecule is involved in about four hydrogen bonds with strengths considerably less than covalent bonds but considerably greater than the natural thermal energy. These hydrogen bonds are roughly tetrahedrally arranged such that when strongly formed the local clustering expands, decreasing the density. Such low density structuring naturally occurs at low and supercooled temperatures and gives rise to many physical and chemical properties that evidence the particular uniqueness of liquid water. If aqueous hydrogen bonds were actually somewhat stronger then water would behave similar to a glass, whereas if they were weaker then water would be a gas and only exist as a liquid at sub-zero temperatures. The overall conclusion of this investigation is that water's hydrogen bond strength is poised centrally within a narrow window of its suitability for life.

Martin Chaplin

2007-06-10T23:59:59.000Z

96

Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010  

SciTech Connect (OSTI)

1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

Lorenz, A.

2011-06-01T23:59:59.000Z

97

Development of a fixed abrasive slicing technique (FAST) for reducing the cost of photovoltaic wafers  

SciTech Connect (OSTI)

This report examines a wafer slicing technique developed by Crystal Systems, Inc. that reduces the cost of photovoltaic wafers. This fixed, abrasive slicing technique (FAST) uses a multiwire bladepack and a diamond-plated wirepack; water is the coolant. FAST is in the prototype production stage and reduces expendable material costs while retaining the advantages of a multiwire slurry technique. The cost analysis revealed that costs can be decreased by making more cuts per bladepack and slicing more wafers per linear inch. Researchers studied the degradation of bladepacks and increased wirepack life. 21 refs.

Schmid, F. (Crystal Systems, Inc., Salem, MA (United States))

1991-12-01T23:59:59.000Z

98

Wafer chamber having a gas curtain for extreme-UV lithography  

DOE Patents [OSTI]

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2001-01-01T23:59:59.000Z

99

Active carbon filter health condition detection with piezoelectric wafer active sensors  

E-Print Network [OSTI]

Active carbon filter health condition detection with piezoelectric wafer active sensors Jingjing Chemical Biological Center, 5183 Blackhawk Road, APG, MD USA 21010 ABSTRACT The impregnated active carbon in active carbon filters by combining the electromechanical impedance spectroscopy (EMIS

Giurgiutiu, Victor

100

Fab cycle time improvement through inventory control : a wafer starts approach  

E-Print Network [OSTI]

Intel's Colorado Springs wafer fabrication facility, known internally as F23, has undertaken several initiatives to reduce cycle time including High Precision Maintenance (HPM), content reduction through the application ...

Ward, Matthew John

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing  

E-Print Network [OSTI]

characteristics of the wafer. The Gabor wavelet transform allows the wave dispersion to be unraveled and the group velocity of individual frequency components to be extracted from the experimentally acquired time waveform. The thesis illustrates the formulation...

Vedantham, Vikram

2004-11-15T23:59:59.000Z

102

On-wafer seamless integration of GaN and Si (100) electronics  

E-Print Network [OSTI]

The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at ...

Chung, Jinwook

103

Standardizing and improving test wafer processes : inventory optimization and a days of inventory pull system  

E-Print Network [OSTI]

Over the past few years, the Intel Fab-17 facility has aggressively pursued lean methodology to reduce the manufacturing costs associated with its aging 200mm diameter wafer process. One area ripe with improvement opportunities ...

Johnson, David W. (David William), S.M. Massachusetts Institute of Technology

2009-01-01T23:59:59.000Z

104

Thread bonds in molecules  

E-Print Network [OSTI]

Unusual chemical bonds are proposed. Each bond is almost covalent but is characterized by the thread of a small radius $\\sim 0.6\\times 10^{-11}$cm, between two nuclei in a molecule. The main electron density is concentrated outside the thread as in a covalent bond. The thread is formed by the electron wave function which has a tendency to be singular on it. The singularity along the thread is cut off by electron "vibrations" due to the interaction with zero point electromagnetic oscillations. The electron energy has its typical value of (1-10)eV. Due to the small tread radius the uncertainty of the electron momentum inside the thread is large resulting in a large electron kinetic energy $\\sim 1 MeV$. This energy is compensated by formation of a potential well due to the reduction of the energy of electromagnetic zero point oscillations. This is similar to formation of a negative van der Waals potential. Thread bonds are stable and cannot be created or destructed in chemical or optical processes.

Ivlev, B

2015-01-01T23:59:59.000Z

105

Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 C  

E-Print Network [OSTI]

such as the fuel combustion chamber of automotive vehicles (i.e., 450 °C) [11] and the emerging micro gas turbine

Howlader, Matiar R

106

Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom  

DOE Patents [OSTI]

An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

Lin, YuPo J. (Naperville, IL); Henry, Michael P. (Batavia, IL); Snyder, Seth W. (Lincolnwood, IL)

2008-11-18T23:59:59.000Z

107

Electronically and ionically conductive porous material and method for manufacture of resin wafers therefrom  

DOE Patents [OSTI]

An electrically and ionically conductive porous material including a thermoplastic binder and one or more of anion exchange moieties or cation exchange moieties or mixtures thereof and/or one or more of a protein capture resin and an electrically conductive material. The thermoplastic binder immobilizes the moieties with respect to each other but does not substantially coat the moieties and forms the electrically conductive porous material. A wafer of the material and a method of making the material and wafer are disclosed.

Lin, YuPo J. (Naperville, IL); Henry, Michael P. (Batavia, IL); Snyder, Seth W. (Lincolnwood, IL)

2011-07-12T23:59:59.000Z

108

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.

Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

2012-06-01T23:59:59.000Z

109

Economic Development Bond Program (Iowa)  

Broader source: Energy.gov [DOE]

Through its Economic Development Bond Program, the Iowa Finance Authority (IFA) issues tax-exempt bonds on behalf of private entities or organizations for eligible purposes. The responsibility for...

110

Private Activity Bond Allocation (Missouri)  

Broader source: Energy.gov [DOE]

The Private Activity Bond Allocation Program provides low-interest financing through tax-exempt bonds for certain types of projects, including electric and gas utility projects. Eligible applicants...

111

CX-000268: Categorical Exclusion Determination | Department of...  

Broader source: Energy.gov (indexed) [DOE]

CX-000268: Categorical Exclusion Determination High Efficiency, Low-Cost, Multijunction Solar Cells Based on Epitaxial Liftoff and Wafer Bonding; National Renewable Energy...

112

Bond and Loan Program (Arkansas)  

Broader source: Energy.gov [DOE]

The Bond and Loan programs of Arkansas are four programs designed to attract small business development within the state.

113

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect (OSTI)

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs

2013-01-16T23:59:59.000Z

114

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatusButlerTransportation From modelingTrending: Metal Oxo Bonds

115

Solder extrusion pressure bonding process and bonded products produced thereby  

DOE Patents [OSTI]

Disclosed is a process for production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about [minus]40 C and 110 C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

Beavis, L.C.; Karnowsky, M.M.; Yost, F.G.

1992-06-16T23:59:59.000Z

116

Solder extrusion pressure bonding process and bonded products produced thereby  

DOE Patents [OSTI]

Production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about -40.degree. C. and 110.degree. C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

Beavis, Leonard C. (Albuquerque, NM); Karnowsky, Maurice M. (Albuquerque, NM); Yost, Frederick G. (Ceder Crest, NM)

1992-01-01T23:59:59.000Z

117

Fabrication of high-density cantilever arrays and through-wafer interconnects  

SciTech Connect (OSTI)

Processes to fabricate dense, dry released microstructures with electrical connections on the opposite side of the wafer are described. A 10 x 10 array of silicon and polysilicon cantilevers with high packing density (5 tips/mm2) and high uniformity (<10 µm length variation across the wafer) are demonstrated. The cantilever release process uses a deep SF6/C4F8, plasma etch followed by a HBr plasma etch to accurately release cantilevers. A process for fabricating electrical contacts through the backside of the wafer is also described. Electrodeposited resist, conformal CVD metal deposition and deep SF6/C4F8 plasma etching are used to make 30 µm/side square vias each of which has a resistance of 50 m(omega).

A. Harley, J.; Abdollahi-Alibeik, S.; Chow, E. M.; Kenney, T. W.; McCarthy, A. M.; McVittie, J. P.; Partridge; Quate, C. F.; Soh, H. T.

1998-11-03T23:59:59.000Z

118

Study on higher harmonic suppression using edge filter and polished Si wafer  

SciTech Connect (OSTI)

Higher harmonics contamination is a severe problem in synchrotron beamlines where grating monochromators are used. In these beamlines, absorption edge filters and critical angle mirrors are used to suppress the harmonic contaminations. In the present study, carried out using Indus-1 reflectivity beamline, a harmonic suppression characteristic of Al edge filter and polished silicon wafer are determined. It is found that the Al filter suppresses higher harmonics in 2–7% range whereas the polished silicon wafer can suppress the higher harmonics below 1%. The results of comparative study are discussed.

Gupta, R. K., E-mail: rkg@rrcat.gov.in; Singh, Amol, E-mail: rkg@rrcat.gov.in; Modi, Mohammed H., E-mail: rkg@rrcat.gov.in; Lodha, G. S., E-mail: rkg@rrcat.gov.in [X-ray Optics Section, ISU Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

2014-04-24T23:59:59.000Z

119

Qualified Energy Conservation Bonds (Ohio)  

Broader source: Energy.gov [DOE]

The Ohio Air Quality Development Authority (OAQDA) administers the Qualified Energy Conservation Bonds (QECB) program in Ohio. QECBs have been used by local governments and public universities to...

120

Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room temperature  

E-Print Network [OSTI]

], spark welding [3], explosive bonding [4], and diffusion bonding [5,6]. However, the processing such as diffusion bonding [5,6], friction welding [7e11], vacuum roll bonding [12] and hot roll bonding [13Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room

Howlader, Matiar R

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Wafer Preparation and Iodine-Ethanol-Ethanol Passivation Procedure for Reproducible Minority-Carrier Lifetime Measurement: Preprint  

SciTech Connect (OSTI)

This paper describes reasons that lifetime measurments may be irreproducible using iodine-in-ethanol (I-E) passivation. Possible factors include the strength of the iodine in ethanol solution, wafer cleaning procedures, influence of wafer container during lifetime measurement, and stability of I-E.

Sopori, B.; Rupnowski, P.; Appel, J.; Mehta, V.; Li, C.; Johnston, S.

2008-05-01T23:59:59.000Z

122

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 14, NO. 3, AUGUST 2001 255 Autonomous On-Wafer Sensors for Process  

E-Print Network [OSTI]

for such a sensor wafer, including equipment characterization and design, process calibration, and equipment qualification and diag- nosis. In this paper, various sensor architectures, power supplies, communications metrology to in-line metrology. Wafer measurement equipment has been moved, where possible, from stand

California at Berkeley, University of

123

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers , M. J. Loboda1)  

E-Print Network [OSTI]

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G. Chung1) , M. J. Loboda comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si

Schroder, Dieter K.

124

Generation of SWNTs on Si Wafer by Alcohol Catalytic CVD Shigeo Maruyama, Shohei Chiashi and Yuhei Miyauchi  

E-Print Network [OSTI]

Generation of SWNTs on Si Wafer by Alcohol Catalytic CVD Shigeo Maruyama, Shohei Chiashi and Yuhei ACCVD technique, lower temperature generation of SWNTs on Al patterned Si surface should be principally possible. We tried to generate SWNTs on Si wafer by ACCVD technique. Zeolite particles supporting Fe

Maruyama, Shigeo

125

Title: Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Authors: Dustin T. Thomas  

E-Print Network [OSTI]

0 Title: Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Authors: Dustin T structural problems is corrosion. In fact the KC-135 now costs $1.2 billion a year to repair corrosion) in a pitch-catch configuration. The sensors were placed on a grid pattern. Material loss through corrosion

Giurgiutiu, Victor

126

Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Dustin Thomas, John Welter  

E-Print Network [OSTI]

1 Corrosion Damage Detection with Piezoelectric Wafer Active Sensors Dustin Thomas, John Welter Air a priority issue for today's Air Force. One of the most critical structural problems is corrosion. In fact the KC-135 now costs $1.2 billion a year to repair corrosion. In this paper, we plan to show the use

Giurgiutiu, Victor

127

LUMINESCENCE IMAGING VERSUS LOCK-IN THERMOGRAPHY ON SOLAR CELLS AND WAFERS Otwin Breitenstein1  

E-Print Network [OSTI]

LUMINESCENCE IMAGING VERSUS LOCK-IN THERMOGRAPHY ON SOLAR CELLS AND WAFERS Otwin Breitenstein1 luminescence and lock-in thermography (LIT) results on one exemplary sample and to draw corresponding, Lock-in thermography, 1 INTRODUCTION The technique of infrared (IR) camera-based lock-in thermography

128

LAMB-WAVE EMBEDDED NDE WITH PIEZOELECTRIC WAFER ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING OF  

E-Print Network [OSTI]

LAMB-WAVE EMBEDDED NDE WITH PIEZOELECTRIC WAFER ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING waves and enable the development of embedded NDE concepts. This paper will present two embedded NDE Embedded nondestructive evaluation (E-NDE) is an emerging technology that aims at performing NDE testing

Giurgiutiu, Victor

129

Megasonic cleaning of wafers in electrolyte solutions: Possible role of electro-acoustic and cavitation effects  

E-Print Network [OSTI]

-acoustic and cavitation effects M. Keswani a , S. Raghavan a,*, P. Deymier a , S. Verhaverbeke b a Materials Science Keywords: Wafer Cleaning Electrolyte Megasonic Electro-acoustic Cavitation Pressure amplitude a b s t r a c Waals adhesion forces. The effect of ionic strength on cavitation has been investigated through

Deymier, Pierre

130

Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers  

E-Print Network [OSTI]

, and on/off ratios were 103 . These results may represent important steps toward a low-cost approach thicknesses derived from low-cost bulk Si 111 wafers. We begin with a description of the procedures for fabricating these structures and transfer printing them onto plastic sub- strates via elastomeric stamps. We

Rogers, John A.

131

Quantum Confinement in Hydrogen Bond  

E-Print Network [OSTI]

In this work, the quantum confinement effect is proposed as the cause of the displacement of the vibrational spectrum of molecular groups that involve hydrogen bonds. In this approach the hydrogen bond imposes a space barrier to hydrogen and constrains its oscillatory motion. We studied the vibrational transitions through the Morse potential, for the NH and OH molecular groups inside macromolecules in situation of confinement (when hydrogen bonding is formed) and non-confinement (when there is no hydrogen bonding). The energies were obtained through the variational method with the trial wave functions obtained from Supersymmetric Quantum Mechanics (SQM) formalism. The results indicate that it is possible to distinguish the emission peaks related to the existence of the hydrogen bonds. These analytical results were satisfactorily compared with experimental results obtained from infrared spectroscopy.

Santos, Carlos da Silva dos; Ricotta, Regina Maria

2015-01-01T23:59:59.000Z

132

Sandia starts silicon wafer production for three nuclear weapon programs |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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133

The New Chemical Bond  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManusScienceThe Life of EnricoFlickr The NationalTheNew

134

Method for vacuum fusion bonding  

DOE Patents [OSTI]

An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

2001-01-01T23:59:59.000Z

135

Fusion bonding and alignment fixture  

DOE Patents [OSTI]

An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all the components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

2000-01-01T23:59:59.000Z

136

Method of bonding  

DOE Patents [OSTI]

1. A method of making a fuel-containing structure for nuclear reactors, comprising providing an assembly comprising a plurality of fuel units; each fuel unit consisting of a core plate containing thermal-neutron-fissionable material, sheets of cladding metal on its bottom and top surfaces, said cladding sheets being of greater width and length than said core plates whereby recesses are formed at the ends and sides of said core plate, and end pieces and first side pieces of cladding metal of the same thickness as the core plate positioned in said recesses, the assembly further comprising a plurality of second side pieces of cladding metal engaging the cladding sheets so as to space the fuel units from one another, and a plurality of filler plates of an acid-dissolvable nonresilient material whose melting point is above 2000.degree. F., each filler plate being arranged between a pair of said second side pieces and the cladding plates of two adjacent fuel units, the filler plates having the same thickness as the second side pieces; the method further comprising enclosing the entire assembly in an envelope; evacuating the interior of the entire assembly through said envelope; applying inert gas under a pressure of about 10,000 psi to the outside of said envelope while at the same time heating the assembly to a temperature above the flow point of the cladding metal but below the melting point of any material of the assembly, whereby the envelope is pressed against the assembly and integral bonds are formed between plates, sheets, first side pieces, and end pieces and between the sheets and the second side pieces; slowly cooling the assembly to room temperature; removing the envelope; and dissolving the filler plates without attacking the cladding metal.

Saller, deceased, Henry A. (late of Columbus, OH); Hodge, Edwin S. (Columbus, OH); Paprocki, Stanley J. (Columbus, OH); Dayton, Russell W. (Columbus, OH)

1987-12-01T23:59:59.000Z

137

New Clean Renewable Energy Bonds | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

New Clean Renewable Energy Bonds New Clean Renewable Energy Bonds New clean renewable energy bonds (CREBs) are tax credit bonds, the proceeds of which are used for capital...

138

Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable...  

Energy Savers [EERE]

Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy Bonds (New CREBs) Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy Bonds (New...

139

Low Temperature Material Bonding Techniq Ue  

DOE Patents [OSTI]

A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

2002-08-06T23:59:59.000Z

140

Pooled Bond Program (South Dakota)  

Broader source: Energy.gov [DOE]

The Pooled Bond Program offered by the Economic Development Finance Authority is designed for capital intensive projects, providing small businesses access to larger capital markets for tax-exempt...

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Emissivity properties of silicon wafers and their application to radiation thermometry  

SciTech Connect (OSTI)

We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on the simulation and experimental results, we developed two different radiation thermometry methods for silicon wafers, the first based on a polarized emissivity-invariant condition, and the second based on the relationship between the ratio of the p-to s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9?5 ?m), irrespective of dielectric film thickness and substrate resistivity due to the dopant concentrations. Temperature measurements were estimated to have expanded uncertainties (k=2) of less than 5 °C. A radiometer system with wavelengths above 4.5 ?m was successfully developed because the system was not influenced by background noise caused by a high-intensity heating lamp.

Iuchi, T.; Seo, T. [Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)] [Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

2013-09-11T23:59:59.000Z

142

Development of a melting and directional solidification process for improving the grain structure and electronic properties of a silicon wafer  

E-Print Network [OSTI]

A manufacturing process that produces high quality, inexpensive kerfless silicon wafers for photovoltaic cells is highly desirable. The process herein described was developed to melt and directionally solidify fine-grained ...

Greenlee, Alison S

2011-01-01T23:59:59.000Z

143

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics for Switching  

E-Print Network [OSTI]

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics will also be discussed. Index Terms--Integrated optoelectronics, optical couplers, op- tical switches

144

Geek-Up[09.03.10]-- Innovative Silicon Wafers, Real-Time Power Traders and Petascale & Exascale Supercomputers  

Broader source: Energy.gov [DOE]

A trillion holes in a silicon wafer the size of a compact disk? Buying when the Columbia River Basin is low, and selling when it's high. And how supercomputers can revolutionize climate science and modeling.

145

Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures  

E-Print Network [OSTI]

TESTING AND SIMULATION OF THE SRF WAFER TEST CAVITY FOR THE CHARACTERIZATION OF SUPERCONDUCTORS AND HETEROSTRUCTURES A Thesis by JUSTIN KYLE COMEAUX Submitted to the Office of Graduate and Professional Studies of Texas A... and cleaning techniques, but these only offer marginal return on their investment. The SRF and accelerator community could benefit greatly from the introduction of higher performance superconductors, such as Nb3Sn or MgB2. The problem with these materials...

Comeaux, Justin

2014-08-07T23:59:59.000Z

146

High temperature performance evaluation of a hypersonic engine ceramic wafer seal  

SciTech Connect (OSTI)

Leakage rates of an innovative hypersonic engine seal were measured using a specially developed static high temperature seal test fixture at NASA Lewis Research Center. The three foot long structural panel-edge seal is designed to minimize leakage of high temperature, high pressure gases past the movable panels of advanced ramjet/scramjet engines. The seal is made of a stack of precision machined ceramic wafer pieces that are inserted into a closely conforming seal channel in the movable engine panel. The wafer seal accommodates the significant distortions in the adjacent engine walls through relative sliding between adjacent wafers. Seal leakage rates are presented for engine simulated air temperatures up to 1350F and for engine pressures up to 100 psi. Leakage rates are also presented for the seal, sealing both a flat wall condition, and an engine simulated distorted wall condition in which the distortion was 0.15 in. in only an 18 in. span. Seal leakage rates were low, meeting an industry-established tentative leakage limit for all combinations of temperature, pressure, and wall conditions considered. Comparisons are made between the measured leakage rates and leakage rates predicted using a seal leakage model developed from externally-pressurized gas film bearing theory.

Steinetz, B.M.

1991-04-01T23:59:59.000Z

147

Method for protecting chip corners in wet chemical etching of wafers  

DOE Patents [OSTI]

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

Hui, Wing C. (Campbell, CA)

1994-01-01T23:59:59.000Z

148

CONVERTIBLE BONDS IN A DEFAULTABLE DIFFUSION MODEL  

E-Print Network [OSTI]

CONVERTIBLE BONDS IN A DEFAULTABLE DIFFUSION MODEL Tomasz R. Bielecki Department of Applied Research Grant PS12918. #12;2 Convertible Bonds in a Defaultable Diffusion Model 1 Introduction In [4), such as Convertible Bonds (CB), and we provided a rigorous decomposition of a CB into a bond component and a (game

Jeanblanc, Monique

149

Three methods to measure RH bond energies  

SciTech Connect (OSTI)

In this paper the authors compare and contrast three powerful methods for experimentally measuring bond energies in polyatomic molecules. The methods are: radical kinetics; gas phase acidity cycles; and photoionization mass spectroscopy. The knowledge of the values of bond energies are a basic piece of information to a chemist. Chemical reactions involve the making and breaking of chemical bonds. It has been shown that comparable bonds in polyatomic molecules, compared to the same bonds in radicals, can be significantly different. These bond energies can be measured in terms of bond dissociation energies.

Berkowitz, J. [Argonne National Lab., IL (United States); Ellison, G.B. [Univ. of Colorado, Boulder, CO (United States). Dept. of Chemistry and Biochemistry; Gutman, D. [Catholic Univ. of America, Washington, DC (United States). Dept. of Chemistry

1993-03-21T23:59:59.000Z

150

Ideally Glassy Hydrogen Bonded Networks  

E-Print Network [OSTI]

The axiomatic theory of ideally glassy networks, which has proved effective in describing phase diagrams and properties of chalcogenide and oxide glasses and their foreign interfaces, is broadened here to include intermolecular interactions in hydrogen-bonded polyalcohols such as glycerol, monosaccharides (glucose), and the optimal bioprotective hydrogen-bonded disaccharide networks formed from trehalose. The methods of Lagrangian mechanics and Maxwellian scaffolds are useful at the molecular level when bonding hierarchies are characterized by constraint counting similar to the chemical methods used by Huckel and Pauling. Whereas Newtonian molecular dynamical methods are useful for simulating large-scale interactions for times of order 10 ps, constraint counting describes network properties on glassy (almost equilibrated) time scales, which may be of cosmological order for oxide glasses, or years for trehalose. The ideally glassy network of trehalose may consist of extensible tandem sandwich arrays.

J. C. Phillips

2005-08-05T23:59:59.000Z

151

Bonded polyimide fuel cell package  

DOE Patents [OSTI]

Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

2010-06-08T23:59:59.000Z

152

Non-bonded ultrasonic transducer  

DOE Patents [OSTI]

A mechanically assembled non-bonded ultrasonic transducer includes a substrate, a piezoelectric film, a wetting agent, a thin metal electrode, and a lens held in intimate contact by a mechanical clamp. No epoxy or glue is used in the assembly of this device.

Eoff, J.M.

1984-07-06T23:59:59.000Z

153

Productivity Improvement for the SHX--SEN's Single-Wafer High-Current Ion Implanter  

SciTech Connect (OSTI)

Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.

Ninomiya, Shiro; Ochi, Akihiro; Kimura, Yasuhiko; Yumiyama, Toshio; Kudo, Tetsuya; Kurose, Takeshi; Kariya, Hiroyuki; Tsukihara, Mitsukuni; Ishikawa, Koji; Ueno, Kazuyoshi [SEN Corporation, 1501, Imazaike, Saijo, Ehime, 799-1362 (Japan)

2011-01-07T23:59:59.000Z

154

2-dimensional ion velocity distributions measured by laser-induced fluorescence above a radio-frequency biased silicon wafer  

SciTech Connect (OSTI)

The dynamics of ions traversing sheaths in low temperature plasmas are important to the formation of the ion energy distribution incident onto surfaces during microelectronics fabrication. Ion dynamics have been measured using laser-induced fluorescence (LIF) in the sheath above a 30 cm diameter, 2.2 MHz-biased silicon wafer in a commercial inductively coupled plasma processing reactor. The velocity distribution of argon ions was measured at thousands of positions above and radially along the surface of the wafer by utilizing a planar laser sheet from a pulsed, tunable dye laser. Velocities were measured both parallel and perpendicular to the wafer over an energy range of 0.4–600 eV. The resulting fluorescence was recorded using a fast CCD camera, which provided resolution of 0.4 mm in space and 30 ns in time. Data were taken at eight different phases during the 2.2 MHz cycle. The ion velocity distributions (IVDs) in the sheath were found to be spatially non-uniform near the edge of the wafer and phase-dependent as a function of height. Several cm above the wafer the IVD is Maxwellian and independent of phase. Experimental results were compared with simulations. The experimental time-averaged ion energy distribution function as a function of height compare favorably with results from the computer model.

Moore, Nathaniel B.; Gekelman, Walter; Pribyl, Patrick [Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States); Zhang, Yiting; Kushner, Mark J. [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122 (United States)

2013-08-15T23:59:59.000Z

155

The Market for Borrowing Corporate Bonds  

E-Print Network [OSTI]

This paper describes the market for borrowing corporate bonds using a comprehensive data set from a major lender. The cost of borrowing corporate bonds is comparable to the cost of borrowing stock, between 10 and 20 basis ...

Asquith, Paul

156

Industrial Revenue Bond Issuance Cost Assistance (Wisconsin)  

Broader source: Energy.gov [DOE]

Industrial Revenue Bonds (IRB) are tax-exempt bonds that can be used to stimulate capital investment and job creation by providing private borrowers with access to financing at interest rates that...

157

Major Business Expansion Bond Program (Maine)  

Broader source: Energy.gov [DOE]

The Major Business Expansion Bond Program provides long-term, credit-enhanced financing up to $25,000,000 at taxable bond rates for businesses creating or retaining at least 50 jobs; up to $10,000...

158

Secondary Market Taxable Bond Program (Maine)  

Broader source: Energy.gov [DOE]

The Secondary Market Taxable Bond Program provides tax-exempt interest rate bond financing for real estate and machinery and equipment acquisitions. Up to 90% of the project debt may be financed,...

159

Bonded, walk-off compensated optical elements  

DOE Patents [OSTI]

A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

Ebbers, Christopher A. (Livermore, CA)

2003-04-08T23:59:59.000Z

160

Study of bump bonding technology  

SciTech Connect (OSTI)

Pixel detectors proposed for the new generation of hadron collider experiments will use bump-bonding technology based on either indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have previously reported large-scale tests of the yield using both indium and Pb/Sn solder bump [1]. The conclusion is that both seem to be viable for pixel detectors. We have also carried out studies of various effects (e.g. storage over long period, effect of heating and cooling, and radiation) on both types of bump bonds using daisy-chained parts on a small scale [2], [3]. Overall, these tests showed little changes in the integrity of the bump connections. Nevertheless, questions still remain on the long-term reliability of the bumps due to thermal cycle effects, attachment to a substrate with a different coefficient of thermal expansion (CTE), and radiation.

Selcuk Cihangir et al.

2003-10-17T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Clean Energy and Bond Finance Initiative  

Broader source: Energy.gov [DOE]

Provides information on Clean Energy and Bond Finance Initiative (CE+BFI). CE+BFI brings together public infrastructure finance agencies, clean energy public fund managers and institutional investors across the country to explore how to raise capital at scale for clean energy development through bond financing. Author: Clean Energy and Bond Finance Initiative

162

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer  

E-Print Network [OSTI]

Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabr...

Tao, Li; Lee, Jongho; Chou, Harry; McDonnell, Stephen J; Ferrer, Domingo A; Babenco, Matias; Wallace, Robert M; Banerjee, Sanjay K; Ruoff, Rodney S; Akinwande, Deji

2012-01-01T23:59:59.000Z

163

Measurement of differential and actual recombination parameters on crystalline silicon wafers  

SciTech Connect (OSTI)

In this paper, for the first time, measurements of differential and actual recombination parameters on crystalline silicon wafers are directly compared. In order to determine the differential bulk lifetime and the differential surface recombination velocity (SRV), small-signal light-biased microwave-detected photoconductance decay (MW-PCD) and modulated free-carrier adsorption (MFCA) measurements are performed. The results obtained by these widespread techniques are compared with quasi-steady-state photoconductance (QSSPC) measurements, which directly determine the actual recombination parameters. On high-resistivity (1,000 {Omega}cm) float-zone (FL) n-type silicon at high injection levels, it is shown that the differentially measured Auger lifetime is a factor of three smaller than the actual Auger lifetime. This finding is in excellent agreement with the theory derived in this work. Thermally oxidized low-resistivity ({approximately}1 {Omega}cm) p-Si wafers serve as an experimental vehicle to compare the differential and the actual injection-level dependent SRV of the Si-SiO{sub 2} interface under low-injection conditions. Using two different integration procedures, the actual SRV is calculated from the differentially measured quantity. The actual SRV measured by the QSSPC technique is found to match perfectly the actual SRV obtained by integration.

Schmidt, J.

1999-10-01T23:59:59.000Z

164

Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun withconfinement plasmasSandy-Nor'easterStatisticalwithRhodiumFew-LayerBonded

165

1144 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 15, NO. 10, OCTOBER 2007 Wafer-Level Modular Testing of Core-Based SoCs  

E-Print Network [OSTI]

1174. An earlier version of this paper was published in the Proceedings of the IEEE International TestCs. To reduce packaging cost and the test cost for pack- aged chips, wafer-level testing (wafer sort) is used]­[10]; these methods are mostly aimed at reducing the test time for package test, where all the scan-based patterns

Chakrabarty, Krishnendu

166

Bond Programs | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: Energy ResourcesJersey:formBlueBombay Beach, California:Bonds allow governments

167

An Algorithm to Convert Wafer to Calendar-Based Preventive Maintenance Schedules for Semiconductor Manufacturing Systems1  

E-Print Network [OSTI]

An Algorithm to Convert Wafer to Calendar-Based Preventive Maintenance Schedules for Semiconductor}@ececs.uc.edu Abstract-- The work presented here is related to the area of Optimal Preventive Maintenance (PM) Scheduling. Preventive Maintenance (PM) is a standard practice followed to increase reliability and availability

Fernandez, Emmanuel

168

Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides  

SciTech Connect (OSTI)

A new light trapping structure is presented with trapping capabilities comparable to or better than those of the perpendicular grooves structure. The new structure traps a larger fraction of rays for 8--80 passes than the perpendicular grooves structure. The average path length enhancement is about 62 times the average thickness. The structure consists of deep ({approximately}200 {micro}m) inverted pyramids on the front side and deep ({approximately}200 {micro}m) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self aligned front metallization. The process uses 250 {micro}m wafers to create cells that on average are about 70 {micro}m thick.

Jorgensen, A.M.; Clausen, T.; Leistiko, O. [Technical Univ. of Denmark, Lyngby (Denmark). Microelectronics Centre

1997-12-31T23:59:59.000Z

169

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics  

SciTech Connect (OSTI)

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-24T23:59:59.000Z

170

Nuclear reactor multiphysics via bond graph formalism  

E-Print Network [OSTI]

This work proposes a simple and effective approach to modeling nuclear reactor multiphysics problems using bond graphs. Conventional multiphysics simulation paradigms normally use operator splitting, which treats the ...

Sosnovsky, Eugeny

2014-01-01T23:59:59.000Z

171

Public Bonding Options | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

While the revenue stream need not be directly related to the financed project, capital lease revenue bonds entail a third party guaranteeing an energy savings revenue stream,...

172

Qualified Energy Conservation Bonds (QECBs) ? State Issues ...  

Broader source: Energy.gov (indexed) [DOE]

Qualified Energy Conservation Bonds (QECBs) - State Issues & Approaches February 12 th , 2013 DOE's Technical Assistance Program 2 Agenda * TAP Introduction & QECB Resources * QECB...

173

Tax-Exempt Industrial Revenue Bonds (Kansas)  

Broader source: Energy.gov [DOE]

Tax-Exempt Industrial Revenue Bonds are issued by cities and counties for the purchase, construction, improvement or remodeling of a facility for agricultural, commercial, hospital, industrial,...

174

Tax-Exempt Bond Financing (Delaware)  

Broader source: Energy.gov [DOE]

The Delaware Economic Development Authority provides tax-exempt bond financing for financial assistance to new or expanding businesses, governmental units and certain organizations that are exempt...

175

Hydrogen Adsorption Induces Interlayer Carbon Bond Formation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported Few-Layer Graphene Friday, February 28, 2014 Among the allotropes of carbon, diamond has some of the most...

176

Water dimer hydrogen bond stretch, donor torsion overtone, and ``in-plane bend'' vibrations  

E-Print Network [OSTI]

Water dimer hydrogen bond stretch, donor torsion overtone, and ``in-plane bend'' vibrations Frank N. Brown Los Alamos National Laboratory, Los Alamos, New Mexico 87545 Heather A. Harker and Poul B. © 2003 American Institute of Physics. DOI: 10.1063/1.1614774 I. INTRODUCTION Water clusters have been

Cohen, Ronald C.

177

Development of a fixed abrasive slicing technique (FAST) for reducing the cost of photovoltaic wafers. Final subcontract report, 9 January 1991--14 April 1991  

SciTech Connect (OSTI)

This report examines a wafer slicing technique developed by Crystal Systems, Inc. that reduces the cost of photovoltaic wafers. This fixed, abrasive slicing technique (FAST) uses a multiwire bladepack and a diamond-plated wirepack; water is the coolant. FAST is in the prototype production stage and reduces expendable material costs while retaining the advantages of a multiwire slurry technique. The cost analysis revealed that costs can be decreased by making more cuts per bladepack and slicing more wafers per linear inch. Researchers studied the degradation of bladepacks and increased wirepack life. 21 refs.

Schmid, F. [Crystal Systems, Inc., Salem, MA (United States)

1991-12-01T23:59:59.000Z

178

How Hydrogen Bond Redundancy Affects Protein Flexibility  

E-Print Network [OSTI]

Modeling a Protein as a BodyBarHinge and Associated Graph Main Question: Stability in proteins is the resistance to denaturation, or unfolding. A protein that is highly stable has a high tolerance to bonds breaking before unfolding; an unstable protein has less tolerance. In this study, we focus on the question, how many hydrogen bonds

Naomi Fox; Filip Jagodzinski; Jeanne Hardy; Ileana Streinu

179

Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers  

SciTech Connect (OSTI)

Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1–20 ? · cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20–200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 ?m is 3–5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 ?m is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.

Gonchar, K. A., E-mail: k.a.gonchar@gmail.com; Osminkina, L. A. [Moscow State University, Faculty of Physics (Russian Federation); Sivakov, V. [Leibniz Institute of Photonic Technology (Germany); Lysenko, V. [Institut National des Sciences Appliquées (INSA) de Lyon, Nanotechnology Institute of Lyon (France); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2014-12-15T23:59:59.000Z

180

Quantitative analysis of phosphosilicate glass films on silicon wafers for calibration of x-ray fluorescence spectrometry standards  

SciTech Connect (OSTI)

The phosphorus and silicon contents of phosphosilicate glass films deposited by chemical vapor deposition (CVD) on silicon wafers were determined. These films were prepared for use as x-ray fluorescence (XRF) spectrometry standards. The thin films were removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si concentrations in solution were determined by inductively coupled plasma atomic emission spectroscopy (ICP). The calculated phosphorus concentration ranged from 2.2 to 12 wt %, with an uncertainty of 2.73 to 10.1 relative percent. Variation between the calculated weight loss (summation of P/sub 2/O/sub 5/ and SiO/sub 2/ amounts as determined by ICP) and the measured weight loss (determined gravimetrically) averaged 4.9%. Results from the ICP method, Fourier transform-infrared spectroscopy (FT-IR), dispersive infrared spectroscopy, electron microprobe, and x-ray fluorescence spectroscopy for the same samples are compared.

Weissman, S.H.

1983-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

WAFER TEST CAVITY -Linking Surface Microstructure to RF Performance: a ‘Short-­?Sample Test Facility’ for characterizing superconducting materials for SRF cavities.  

SciTech Connect (OSTI)

The Wafer Test cavity was designed to create a short sample test system to determine the properties of the superconducting materials and S?I?S hetero?structures. The project, funded by ARRA, was successful in accomplishing several goals to achieving a high gradient test system for SRF research and development. The project led to the design and construction of the two unique cavities that each severed unique purposes: the Wafer test Cavity and the Sapphire Test cavity. The Sapphire Cavity was constructed first to determine the properties of large single crystal sapphires in an SRF environment. The data obtained from the cavity greatly altered the design of the Wafer Cavity and provided the necessary information to ascertain the Wafer Test cavity’s performance.

Pogue, Nathaniel; Comeaux, Justin; McIntyre, Peter

2014-05-30T23:59:59.000Z

182

Decoupling bulk- and surface-limited lifetimes in thin kerfless silicon wafers using spectrally resolved transient absorption pump-probe spectroscopy and computer simulations  

E-Print Network [OSTI]

One of the key technological objectives to further decrease the cost of silicon (Si) PV and enable manufacturing of crystalline silicon is to improve the quality of thin, kerfless Si wafers to monocrystalline equivalent. ...

Siah, Sin Cheng

2013-01-01T23:59:59.000Z

183

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams  

SciTech Connect (OSTI)

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98?nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500?°C. After 600–700?°C annealing, the defect-rich region expanded up to about 170?nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800?°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900?°C), oxygen-related defects were the major point defects and they were located at <25?nm.

Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-10-07T23:59:59.000Z

184

Process Of Bonding Copper And Tungsten  

DOE Patents [OSTI]

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO); Davis, John W. (Ballwin, MO)

2000-07-18T23:59:59.000Z

185

Draft Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel  

SciTech Connect (OSTI)

This document summarizes the U.S. Department of Energy's ''Draft Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel''. In addition to information concerning the background, purpose and need for the proposed action, and the National Environmental Policy Act process, this summary describes the characteristics of sodium-bonded spent nuclear fuel, the proposed treatment methods, the proposed facilities, the alternatives considered, and the environmental consequences of these alternatives. A glossary is included at the end to assist the reader with some of the technical terms used in this document.

N /A

1999-07-30T23:59:59.000Z

186

A Preorganized Hydrogen Bond Network and Its Effect on Anion...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Preorganized Hydrogen Bond Network and Its Effect on Anion Stability. A Preorganized Hydrogen Bond Network and Its Effect on Anion Stability. Abstract: Rigid tricyclic locked in...

187

Local Option- Industrial Facilities and Development Bonds (Utah)  

Broader source: Energy.gov [DOE]

Under the Utah Industrial Facilities and Development Act, counties, municipalities, and state universities in Utah may issue Industrial Revenue Bonds (IRBs) or Industrial Development Bonds (IDBs)...

188

Atoms in Valence Bond. Method, implementation and application.  

E-Print Network [OSTI]

??The Atoms in Valence Bond (AiVB) approach is presented. The main goal was to develop a new and innovative approach, within the existing Valence Bond… (more)

Zielinski, M.L.

2012-01-01T23:59:59.000Z

189

Mechanistic Examination of C?–C? Bond Cleavages...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanistic Examination of C?–C? Bond Cleavages of Tryptophan Residues during Dissociations of Molecular Mechanistic Examination of C?–C? Bond...

190

Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with covalently-bound hexafluoroisopropanol groups. Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...

191

Atomistic modeling of amorphous silicon carbide using a bond...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modeling of amorphous silicon carbide using a bond-order potential. Atomistic modeling of amorphous silicon carbide using a bond-order potential. Abstract: Molecular dynamics...

192

Using Qualified Energy Conservation Bonds for Public Building...  

Broader source: Energy.gov (indexed) [DOE]

Using Qualified Energy Conservation Bonds for Public Building Upgrades: Reducing Energy Bills in the City of Philadelphia Using Qualified Energy Conservation Bonds for Public...

193

Taking Advantage of Qualified Energy Conservation Bonds (QECBs...  

Broader source: Energy.gov (indexed) [DOE]

Advantage of Qualified Energy Conservation Bonds (QECBs) Taking Advantage of Qualified Energy Conservation Bonds (QECBs) Blue version of the EERE PowerPoint template, for use with...

194

IRS Announces New Tribal Economic Development Bond Allocation...  

Broader source: Energy.gov (indexed) [DOE]

IRS Announces New Tribal Economic Development Bond Allocation Guidance IRS Announces New Tribal Economic Development Bond Allocation Guidance July 18, 2012 - 3:46pm Addthis To...

195

Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen K-edge Spectroscopy and Electronic Structure Theory . Covalency in Metal-Oxygen Multiple Bonds Evaluated Using...

196

Municipal Bond - Power Purchase Agreement Model Continues to...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Municipal Bond - Power Purchase Agreement Model Continues to Provide Low-Cost Solar Energy Municipal Bond - Power Purchase Agreement Model Continues to Provide Low-Cost Solar...

197

Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues. Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues....

198

The Ohio Enterprise Bond Fund (Ohio)  

Broader source: Energy.gov [DOE]

The Ohio Enterprise Bond Fund (OEBF) was created in 1988 to promote economic development, create and retain quality jobs and assist governmental operations. The program enables non-profit and for...

199

Industrial Revenue Bond Program (District of Columbia)  

Broader source: Energy.gov [DOE]

The District provides below market bond financing to lower the costs of borrowing for qualified capital construction and renovation projects. The program is available to non-profits, institutions,...

200

Method of bonding metals to ceramics  

DOE Patents [OSTI]

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

Maroni, V.A.

1991-04-23T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

202

Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers (Prop 2003-054)  

SciTech Connect (OSTI)

Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900 C and 1150 C for up to 6 h - highly (0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at a faster rate than the Al-face. At 900 C and 1000 C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face of polycrystalline AlN. At 1100 C and 1150 C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface. The orientation relationship between AlN and Al{sub 2}O{sub 3} was (0001) AlN//(10{bar 1}0) Al{sub 2}O{sub 3} and (1{bar 1}00) AlN//(01{bar 1}2) Al{sub 2}O{sub 3}.

Speakman, Scott A [ORNL; Gu, Z [Kansas State University; Edgar, J H [Kansas State University; Blom, Douglas Allen [ORNL; Perrin, J [Kansas State University; Chaudhuri, J [Kansas State University

2006-10-01T23:59:59.000Z

203

Dinuclear Metalloradicals Featuring Unsupported Metal-Metal Bonds  

SciTech Connect (OSTI)

Unlike the very labile, unobservable radical cations [{l_brace}CpM(CO){sub 3}{r_brace}{sub 2}]{sup {sm_bullet}+} (M = W, Mo), derivatives [{l_brace}CpM(CO){sub 2}(PMe{sub 3}){r_brace}{sub 2}]{sup {sm_bullet}+} are stable enough to be isolated and characterized. Experimental and theoretical studies show that the shortened M-M bonds are of order 1 1/2, and that they are not supported by bridging ligands. The unpaired electron is fully delocalized, with a spin density of ca. 45% on each metal atom. We thank the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Biosciences and Geosciences for support of this work. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. The EPR and computational studies were performed using EMSL, a national scientific user facility sponsored by the DOE's Office of Biological and Environmental Research and located at PNNL. We thank Dr. Charles Windisch for access to his UV-Vis-NIR spectrometer.

van der Eide, Edwin F.; Yang, Ping; Walter, Eric D.; Liu, Tianbiao L.; Bullock, R. Morris

2012-08-13T23:59:59.000Z

204

July 18, 2012 Using Qualified Energy Conservation Bonds for Public  

E-Print Network [OSTI]

July 18, 2012 Using Qualified Energy Conservation Bonds for Public Building Upgrades: Reducing Energy Bills in the City of Philadelphia Qualified Energy Conservation Bonds (QECBs) are federally Energy Conservation Bond (QECB) is a bond that enables qualified state, tribal and local government

205

The Ties That Bond: Re-Examining the Relationship between Facebook Use and Bonding Social Capital  

E-Print Network [OSTI]

The Ties That Bond: Re-Examining the Relationship between Facebook Use and Bonding Social Capital established a positive relationship between measures of Facebook use and perceptions of social capital. Like other social network sites, Facebook is especially well-positioned to enhance users' bridging social

Michigan, University of

206

Shirzadi et al. Surface and Interface Analysis 2001; 31:609-618 Interface evolution and bond strength when diffusion bonding  

E-Print Network [OSTI]

strength when diffusion bonding materials with stable oxide films A.A. Shirzadi* , H. Assadi and E morphologies and strengths of aluminium diffusion bonds are reviewed. Previous approaches, proposed to overcome for both solid-state diffusion bonding and conventional transient liquid phase (TLP) diffusion bonding. Non

Cambridge, University of

207

Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, Tobias Steinel, and M. D. Fayer*  

E-Print Network [OSTI]

Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, TobiasVed: September 1, 2003; In Final Form: December 18, 2003 The nature of hydrogen bonding networks following hydrogen bond breaking is investigated using vibrational echo correlation spectroscopy of the hydroxyl

Fayer, Michael D.

208

Process Of Bonding Copper And Tungsten  

DOE Patents [OSTI]

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO)

1999-11-23T23:59:59.000Z

209

Epoxy bond and stop etch fabrication method  

DOE Patents [OSTI]

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

Simmons, Jerry A. (Sandia Park, NM); Weckwerth, Mark V. (Pleasanton, CA); Baca, Wes E. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

210

Bonded ultrasonic transducer and method for making  

DOE Patents [OSTI]

An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements. 12 figs.

Dixon, R.D.; Roe, L.H.; Migliori, A.

1995-11-14T23:59:59.000Z

211

Bonded ultrasonic transducer and method for making  

DOE Patents [OSTI]

An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

Dixon, Raymond D. (Los Alamos, NM); Roe, Lawrence H. (Los Alamos, NM); Migliori, Albert (Santa Fe, NM)

1995-01-01T23:59:59.000Z

212

Bond Strength Measurements from an Australian Standard Bond Wrench in Comparison to the Unbalanced ASTM C 1072 Bond Wrench to the Balanced and Unbalanced Wrenches  

E-Print Network [OSTI]

Bond wrenches. The Australian wrench values were significantly higher than the American bond wrenches for similar types of samples. Hence it was recommended that the tests be carried out by replacing the cement with Portland cement. This experimental...

Suresh, Sri Vishnu Chaitanya Guptha

2014-08-14T23:59:59.000Z

213

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy.

Lauf, Robert J. (Oak Ridge, TN); McMillan, April D. (Knoxville, TN); Paulauskas, Felix L. (Oak Ridge, TN); Fathi, Zakaryae (Cary, NC); Wei, Jianghua (Raleigh, NC)

1998-01-01T23:59:59.000Z

214

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

1998-09-08T23:59:59.000Z

215

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

1998-08-25T23:59:59.000Z

216

Phosphate-bonded calcium aluminate cements  

DOE Patents [OSTI]

A method is described for making a rapid-setting phosphate-bonded cementitious material. A powdered aluminous cement is mixed with an aqueous solution of ammonium phosphate. The mixture is allowed to set to form an amorphous cementitious material which also may be hydrothermally treated at a temperature of from about 120 C to about 300 C to form a crystal-containing phosphate-bonded material. Also described are the cementitious products of this method and the cement composition which includes aluminous cement and ammonium polyphosphate. 10 figures.

Sugama, T.

1993-09-21T23:59:59.000Z

217

Evaluation of the Role of Water in the H2 Bond Formation by Ni(II)-based Electrocatalysts  

SciTech Connect (OSTI)

We investigate the role of water in the H-H bond formation by a family of nickel molecular catalysts that exhibit high rates for H2 production in acetonitrile solvent. A key feature leading to the high reactivity is the Lewis acidity of the Ni(II) center and pendant amines in the diphosphine ligand that function as Lewis bases, facilitating H-H bond formation or cleavage. Significant increases in the rate of H2 production have been reported in the presence of added water. Our calculations show that molecular water can displace an acetonitrile solvent molecule in the first solvation shell of the metal. One or two water molecules can also participate in shuttling a proton that can combine with a metal hydride to form the H-H bond. However the participation of the water molecules does not lower the barrier to H-H bond formation. Thus these calculations suggest that the rate increase due to water in these electrocatalysts is not associated with the elementary step of H-H bond formation or cleavage, but rather with the proton delivery steps. We attribute the higher barrier in the H-H bond formation in the presence of water to a decrease in direct interaction between the protic and hydridic hydrogen atoms forced by the water molecules. This research was supported as part of the Center for Molecular Electrocatalysis, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences. Computational resources were provided at W. R. Wiley Environmental Molecular Science Laboratory - Pacific Northwest National Laboratory, the National Energy Research Scientific Computing Center (NERSC) at Lawrence Berkeley National Laboratory, and the Jaguar supercomputer at Oak Ridge National Laboratory.

Ho, Ming-Hsun; Raugei, Simone; Rousseau, Roger J.; Dupuis, Michel; Bullock, R. Morris

2013-07-17T23:59:59.000Z

218

Nitride-bonded silicon carbide composite filter  

SciTech Connect (OSTI)

The objective of this program is to develop and demonstrate an advanced hot gas filter, using ceramic component technology, with enhanced durability to provide increased resistance to thermal fatigue and crack propagation. The material is silicon carbide fiber reinforced nitride bonded silicon carbide.

Thomson, B.N.; DiPietro, S.G.

1995-12-01T23:59:59.000Z

219

Fluorinated diamond bonded in fluorocarbon resin  

DOE Patents [OSTI]

By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

Taylor, Gene W. (Los Alamos, NM)

1982-01-01T23:59:59.000Z

220

Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Dynamic force spectroscopy on multiple bonds: experiments and model  

E-Print Network [OSTI]

We probe the dynamic strength of multiple biotin-streptavidin adhesion bonds under linear loading using the biomembrane force probe setup for dynamic force spectroscopy. Measured rupture force histograms are compared to results from a master equation model for the stochastic dynamics of bond rupture under load. This allows us to extract the distribution of the number of initially closed bonds. We also extract the molecular parameters of the adhesion bonds, in good agreement with earlier results from single bond experiments. Our analysis shows that the peaks in the measured histograms are not simple multiples of the single bond values, but follow from a superposition procedure which generates different peak positions.

T. Erdmann; S. Pierrat; P. Nassoy; U. S. Schwarz

2007-12-18T23:59:59.000Z

222

Bayesian field theoretic reconstruction of bond potential and bond mobility in single molecule force spectroscopy  

E-Print Network [OSTI]

Quantifying the forces between and within macromolecules is a necessary first step in understanding the mechanics of molecular structure, protein folding, and enzyme function and performance. In such macromolecular settings, dynamic single-molecule force spectroscopy (DFS) has been used to distort bonds. The resulting responses, in the form of rupture forces, work applied, and trajectories of displacements, have been used to reconstruct bond potentials. Such approaches often rely on simple parameterizations of one-dimensional bond potentials, assumptions on equilibrium starting states, and/or large amounts of trajectory data. Parametric approaches typically fail at inferring complex-shaped bond potentials with multiple minima, while piecewise estimation may not guarantee smooth results with the appropriate behavior at large distances. Existing techniques, particularly those based on work theorems, also do not address spatial variations in the diffusivity that may arise from spatially inhomogeneous coupling to...

Chang, Joshua C; Chou, Tom

2015-01-01T23:59:59.000Z

223

Various Carbon to Carbon Bond Lengths Inter-related via the Golden Ratio, and their Linear Dependence on Bond Energies  

E-Print Network [OSTI]

This work presents the relations between the carbon to carbon bond lengths in the single, double and triple bonds and in graphite, butadiene and benzene. The Golden ratio, which was shown to divide the Bohr radius into two parts pertaining to the charged particles, the electron and proton, and to divide inter-atomic distances into their cationic and anionic radii, also plays a role in the carbon-carbon bonds and in the ionic/polar character of those in graphite, butadiene and benzene. Further, the bond energies of the various CC bonds are shown to vary linearly with the bond lengths.

Raji Heyrovska

2008-09-11T23:59:59.000Z

224

Technical Review Report for the Justification for Shipment of Sodium-Bonded Carbide Fuel Pins in the T-3 Cask  

SciTech Connect (OSTI)

This report documents the review of the Fluor Submittal (hereafter, the Submittal), prepared by Savannah River Packaging Technology (SRPT) of Savannah River National Laboratory (SRNL), at the request of the Department of Energy's (DOE) Richland Operations Office, for the shipment of unirradiated and irradiated sodium-bonded carbide fuel pins. The sodium-bonded carbide fuel pins are currently stored at the Fast Flux Test Facility (FFTF) awaiting shipment to Idaho National Laboratory (INL). Normally, modified contents are included into the next revision of the SARP. However, the contents, identified to be shipped from FFTF to Idaho National Laboratory, are a one-way shipment of 18 irradiated fuel pins and 7 unirradiated fuel pins, where the irradiated and unirradiated fuel pins are shipped separately, and can be authorized with a letter amendment to the existing Certificate of Compliance (CoC).

West, M; DiSabatino, A

2008-01-04T23:59:59.000Z

225

Experimental bond critical point and local energy density properties...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mn-O, Fe-O and Co-O bonded interactions for Abstract: Bond critical point, bcp, and local energy density properties for the electron density, ED, distributions, calculated with...

226

Pre-plated reactive diffusion-bonded battery electrode plaques  

DOE Patents [OSTI]

A high strength, metallic fiber battery plaque is made using reactive diffusion bonding techniques, where a substantial amount of the fibers are bonded together by an iron-nickel alloy.

Maskalick, Nicholas J. (Pittsburgh, PA)

1984-01-01T23:59:59.000Z

227

Single-Issue Industrial Revenue Bond Program (Missouri)  

Broader source: Energy.gov [DOE]

The Missouri Development Finance Board administers a Single-Issue Tax-Exempt Industrial Revenue Bond Program as well as a Taxable Industrial Revenue Bond Program. The Tax-Exempt Program finances (i...

228

Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Abstract: Since oxygen atom...

229

Hydrogen Bonding DOI: 10.1002/anie.200501349  

E-Print Network [OSTI]

systems[5­13] and crystal engineering.[14­18] Most C�H···O hydrogen bonds have been observed for the soHydrogen Bonding DOI: 10.1002/anie.200501349 Observation of Weak C�H···O Hydrogen Bonding to Unactivated Alkanes** Xue-Bin Wang, Hin-Koon Woo, Boggavarapu Kiran, and Lai-Sheng Wang* The hydrogen bond

Simons, Jack

230

Article coated with flash bonded superhydrophobic particles  

DOE Patents [OSTI]

A method of making article having a superhydrophobic surface includes: providing a solid body defining at least one surface; applying to the surface a plurality of diatomaceous earth particles and/or particles characterized by particle sizes ranging from at least 100 nm to about 10 .mu.m, the particles being further characterized by a plurality of nanopores, wherein at least some of the nanopores provide flow through porosity, the particles being further characterized by a plurality of spaced apart nanostructured features that include a contiguous, protrusive material; flash bonding the particles to the surface so that the particles are adherently bonded to the surface; and applying a hydrophobic coating layer to the surface and the particles so that the hydrophobic coating layer conforms to the nanostructured features.

Simpson, John T (Clinton, TN) [Clinton, TN; Blue, Craig A (Knoxville, TN) [Knoxville, TN; Kiggans, Jr., James O [Oak Ridge, TN

2010-07-13T23:59:59.000Z

231

Partial-Transient-Liquid-Phase Bonding of Advanced Ceramics Using Surface-Modified Interlayers  

E-Print Network [OSTI]

Theoretical-Model for Diffusion Bonding." Metal Science 16,Derby, B. & Wallach, E. "Diffusion Bonding - Development ofInterfacial Contact during Diffusion Bonding." Metallurgical

Reynolds, Thomas Bither

2012-01-01T23:59:59.000Z

232

Oil prices and government bond risk premiums Herv Alexandre*  

E-Print Network [OSTI]

Oil prices and government bond risk premiums By Hervé Alexandre*ş Antonin de Benoist * Abstract : This article analyses the impact of oil price on bond risk premiums issued by emerging economies. No empirical study has yet focussed on the effects of the oil price on government bond risk premiums. We develop

Boyer, Edmond

233

Diffusion Bonding Aluminium Alloys and Composites: New Approaches and Modelling  

E-Print Network [OSTI]

Diffusion Bonding Aluminium Alloys and Composites: New Approaches and Modelling Amir A. Shirzadi of the research, two new methods for TLP diffusion bonding of aluminium-based composites (aluminium alloys diffusion bonding and hot isostatic pressing without encapsulation. It allows the fabrication of intricate

Cambridge, University of

234

Energetics of hydrogen bonds in peptides Sheh-Yi Sheu*  

E-Print Network [OSTI]

for water. We find that the activation energy for the rupture of the hydrogen bond in a -sheet under calculation can be useful for the prediction of hydrogen bond strengths in various environments of interest extensively to calculate free energy changes caused by hydrogen bond rupture. Here the water environment

Sheu, Sheh-Yi

235

Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang*  

E-Print Network [OSTI]

Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang* Department of Biochemistry, University of Zurich, Zurich, Switzerland Abstract Ligand binding involves breakage of hydrogen bonds with water molecules and formation of new hydrogen bonds between protein and ligand. In this work, the change

Caflisch, Amedeo

236

Analysis of C H...O hydrogen bonds  

E-Print Network [OSTI]

1 Analysis of C H...O hydrogen bonds in high resolution protein crystal structures from the PDB 1.4 Identification of C-H...O hydrogen bonds............................................. 1.4.1 The definition of a C-H...O hydrogen bond.................................... 1.4.2 Fixing the hydrogen and measuring the parameters

Babu, M. Madan

237

48.8 mW Multi-cell InP HBT Amplifier with on-wafer power combining at 220 GHz  

E-Print Network [OSTI]

@teledyne-si.com Abstract-- We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT-InP HBT, MMIC, Power amplifier, On-wafer power combining I. INTRODUCTION Solid-state Power Amplifiers associated with rain, humidity, and fog. To date, the highest reported output power for a solid state G

Rodwell, Mark J. W.

238

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2CV.2.36 DETERMINING THE BULK LIFETIME OF UNPASSIVATED MULTICRYSTALLINE SILICON WAFERS  

E-Print Network [OSTI]

. Brendel1 , R. Falster2 and R. Sinton3 1 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1 Sinton Instruments, 4720 Walnut Street, Suite 102, Boulder, CO 80301, USA ABSTRACT: The determination potential and benefit of carrier lifetime measure- ments on unprocessed bare wafers, Sinton et al. [3] pre

239

An experimental investigation of silicon wafer surface roughness and its effect on the full strength of plated metals  

SciTech Connect (OSTI)

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches were subjected to tensile pull strength tests. Electroless Ni/electroless Cu/electroplated Cu and electroless Ni/electroplated Cu were the two types of plate contacts tested. It was found that smoother surfaces had higher pull strength than rougher, chemically etched surfaces. The presence of the electroless Cu layer was found to be important to adhesion. The mode of fracture of the contact as it left the silicon was studied, and it was found that in almost all cases separation was due to fracture of the bulk silicon phase. The correlation between surface roughness and mode of contact failure is presented and interpreted.

Spiers, G.D.

1981-01-01T23:59:59.000Z

240

Vacuum fusion bonding of glass plates  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Vacuum fusion bonding of glass plates  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2000-01-01T23:59:59.000Z

242

Anesthesia cutoff phenomenon: Interfacial hydrogen bonding  

SciTech Connect (OSTI)

Anesthesia cutoff refers to the phenomenon of loss of anesthetic potency in a homologous series of alkanes and their derivatives when their sizes become too large. In this study, hydrogen bonding of 1-alkanol series (ethanol to eicosanol) to dipalmitoyl-L-alpha-phosphatidylcholine (DPPC) was studied by Fourier transform infrared spectroscopy (FTIR) in DPPC-D2O-in-CCl4 reversed micelles. The alkanols formed hydrogen bonds with the phosphate moiety of DPPC and released the DPPC-bound deuterated water, evidenced by increases in the bound O-H stretching signal of the alkanol-DPPC complex and also in the free O-D stretching band of unbound D2O. These effects increased according to the elongation of the carbon chain of 1-alkanols from ethanol (C2) to 1-decanol (C10), but suddenly almost disappeared at 1-tetradecanol (C14). Anesthetic potencies of these alkanols, estimated by the activity of brine shrimps, were linearly related to hydrogen bond-breaking activities below C10 and agreed with the FTIR data in the cutoff at C10.

Chiou, J.S.; Ma, S.M.; Kamaya, H.; Ueda, I. (Univ. of Utah School of Medicine, Salt Lake City (USA))

1990-05-04T23:59:59.000Z

243

Microchannel cooling of face down bonded chips  

DOE Patents [OSTI]

Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multichip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

Bernhardt, Anthony F. (Berkeley, CA)

1993-01-01T23:59:59.000Z

244

Microchannel cooling of face down bonded chips  

DOE Patents [OSTI]

Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multi chip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

Bernhardt, A.F.

1993-06-08T23:59:59.000Z

245

Oak Ridge National Laboratory National Security Programs  

E-Print Network [OSTI]

Oak Ridge National Laboratory National Security Programs Dr. Michael A. Kuliasha, Chief Scientist National Security Technologies Oak Ridge National Laboratory #12;2 OAK RIDGE NATIONAL LABORATORY U. S Security Challenges #12;3 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY How Will Our Enemies

246

Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch  

E-Print Network [OSTI]

Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch K. J. Gaffney, I. R. Piletic, and M. D. Fayer* Department measured with ultrafast infrared pump-probe experiments. Non-hydrogen-bond donating OD stretches (2690 cm-1

Fayer, Michael D.

247

Ultrasonic evaluation of beryllium-copper diffusion bonds  

SciTech Connect (OSTI)

A study was performed to compare the effectiveness of several advanced ultrasonic techniques when used to determine the strength of diffusion bonded beryllium-copper, which heretofore have each been applied to only a few material systems. The use of integrated backscatter calculations, frequency domain reflection coefficients, and time-of-flight variance was compared in their ability to characterize the bond strength in a series of beryllium-copper diffusion bond samples having a wide variation in bond quality. Correlation of integrated backscatter calculations and time-of-flight variance with bond strength was good. Some correlation of the slope of the frequency based reflection coefficient was shown for medium and high strength bonds, while its Y-intercept showed moderate correlation for all bond strengths.

Jamieson, E.E.

2000-06-08T23:59:59.000Z

248

Bond selective chemistry beyond the adiabatic approximation  

SciTech Connect (OSTI)

One of the most important challenges in chemistry is to develop predictive ability for the branching between energetically allowed chemical reaction pathways. Such predictive capability, coupled with a fundamental understanding of the important molecular interactions, is essential to the development and utilization of new fuels and the design of efficient combustion processes. Existing transition state and exact quantum theories successfully predict the branching between available product channels for systems in which each reaction coordinate can be adequately described by different paths along a single adiabatic potential energy surface. In particular, unimolecular dissociation following thermal, infrared multiphoton, or overtone excitation in the ground state yields a branching between energetically allowed product channels which can be successfully predicted by the application of statistical theories, i.e. the weakest bond breaks. (The predictions are particularly good for competing reactions in which when there is no saddle point along the reaction coordinates, as in simple bond fission reactions.) The predicted lack of bond selectivity results from the assumption of rapid internal vibrational energy redistribution and the implicit use of a single adiabatic Born-Oppenheimer potential energy surface for the reaction. However, the adiabatic approximation is not valid for the reaction of a wide variety of energetic materials and organic fuels; coupling between the electronic states of the reacting species play a a key role in determining the selectivity of the chemical reactions induced. The work described below investigated the central role played by coupling between electronic states in polyatomic molecules in determining the selective branching between energetically allowed fragmentation pathways in two key systems.

Butler, L.J. [Univ. of Chicago, IL (United States)

1993-12-01T23:59:59.000Z

249

Developing A Laser Shockwave Model For Characterizing Diffusion Bonded Interfaces  

SciTech Connect (OSTI)

12. Other advances in QNDE and related topics: Preferred Session Laser-ultrasonics Developing A Laser Shockwave Model For Characterizing Diffusion Bonded Interfaces 41st Annual Review of Progress in Quantitative Nondestructive Evaluation Conference QNDE Conference July 20-25, 2014 Boise Centre 850 West Front Street Boise, Idaho 83702 James A. Smith, Jeffrey M. Lacy, Barry H. Rabin, Idaho National Laboratory, Idaho Falls, ID ABSTRACT: The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) which is assigned with reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU. The new LEU fuel is based on a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to complete the fuel qualification process, the laser shock technique is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. The Laser Shockwave Technique (LST) is being investigated to characterize interface strength in fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However the deposition of laser energy into the containment layer on specimen’s surface is intractably complex. The shock wave energy is inferred from the velocity on the backside and the depth of the impression left on the surface from the high pressure plasma pulse created by the shock laser. To help quantify the stresses and strengths at the interface, a finite element model is being developed and validated by comparing numerical and experimental results for back face velocities and front face depressions with experimental results. This paper will report on initial efforts to develop a finite element model for laser shock.

James A. Smith; Jeffrey M. Lacy; Barry H. Rabin

2014-07-01T23:59:59.000Z

250

Partial-Transient-Liquid-Phase Bonding of Advanced Ceramics Using Surface-Modified Interlayers  

E-Print Network [OSTI]

Alumina Diffusion Bonding and Titanium Active Brazing."O 3 -Titanium Adhesion in the View of the Diffusion Bonding

Reynolds, Thomas Bither

2012-01-01T23:59:59.000Z

251

Repairable chip bonding/interconnect process  

DOE Patents [OSTI]

A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

Bernhardt, Anthony F. (Berkeley, CA); Contolini, Robert J. (Livermore, CA); Malba, Vincent (Livermore, CA); Riddle, Robert A. (Tracy, CA)

1997-01-01T23:59:59.000Z

252

Repairable chip bonding/interconnect process  

DOE Patents [OSTI]

A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules is disclosed. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder. 10 figs.

Bernhardt, A.F.; Contolini, R.J.; Malba, V.; Riddle, R.A.

1997-08-05T23:59:59.000Z

253

Covalent Bonding in Actinide Sandwich Molecules  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to User GroupInformationE-GovNatural GasCourse ClustersCovalent Bonding in

254

Qualified Energy Conservation Bonds | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy1.pdfMarket37963 Vol.Department of EnergyMarchU.S.Bonds

255

The Molecular Bond: October 2014 | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe Molecular Bond: October 2014 The Molecular

256

Qualified Energy Conservation Bond (QECB) Update: New  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment of EnergyQualified Energy Conservation Bond (QECB)

257

Qualified Energy Conservation Bonds | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment of EnergyQualified EnergyBonds Qualified Energy

258

Covalent Bonding in Actinide Sandwich Molecules  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases on &gamma;-Al2O3. |ID#:Synchrotron RadiationCovalent Bonding

259

Cement Bond Log | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Information on PV EconomicsOregon: Energy ResourcesCeilingCement Bond

260

Chemically bonded phospho-silicate ceramics  

DOE Patents [OSTI]

A chemically bonded phospho-silicate ceramic formed by chemically reacting a monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and a sparsely soluble oxide, with a sparsely soluble silicate in an aqueous solution. The monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and sparsely soluble oxide are both in powder form and combined in a stochiometric molar ratio range of (0.5-1.5):1 to form a binder powder. Similarly, the sparsely soluble silicate is also in powder form and mixed with the binder powder to form a mixture. Water is added to the mixture to form a slurry. The water comprises 50% by weight of the powder mixture in said slurry. The slurry is allowed to harden. The resulting chemically bonded phospho-silicate ceramic exhibits high flexural strength, high compression strength, low porosity and permeability to water, has a definable and bio-compatible chemical composition, and is readily and easily colored to almost any desired shade or hue.

Wagh, Arun S. (Orland Park, IL); Jeong, Seung Y. (Westmont, IL); Lohan, Dirk (Chicago, IL); Elizabeth, Anne (Chicago, IL)

2003-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

National Laboratory Impact Initiative  

Broader source: Energy.gov [DOE]

The National Laboratory Impact Initiative supports the relationship between the Office of Energy Efficiency & Renewable Energy and the national laboratory enterprise.  The national laboratories...

262

New Bond Helps Toledo, Ohio, Expand Financing Pool | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdfEnergy HealthCommentsAugustNationalMarkets with Wind Power | DepartmentNew Bond

263

National System Templates: Building Sustainable National Inventory...  

Open Energy Info (EERE)

Templates: Building Sustainable National Inventory Management Systems Jump to: navigation, search Tool Summary LAUNCH TOOL Name: National System Templates: Building Sustainable...

264

National Security  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Regionat Cornell Batteries &NST DivisionNationalEnergy

265

National Laboratory  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNationalRestart ofMeasuringInformationOffice ofEnergy, OfficeUS Dept

266

National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andData andFleetEngineeringAnnual ReportNational Lab Day -

267

National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andData andFleetEngineeringAnnual ReportNational Lab Day -draws more

268

Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt  

E-Print Network [OSTI]

ABSTRACT Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt

Reisslein, Martin

269

Torsion Testing of Diffusion Bonded LIGA Formed Nickel  

SciTech Connect (OSTI)

A test technique has been devised which is suitable for the testing of the bond strength of batch diffusion bonded LIGA or DXRL defined structures. The method uses a torsion tester constructed with the aid of LIGA fabrication and distributed torsion specimens which also make use of the high aspect ratio nature of DXRL based processing. Measurements reveal achieved bond strengths of 130MPa between electroplated nickel with a bond temperature of 450 C at 7 ksi pressure which is a sufficiently low temperature to avoid mechanical strength degradation.

Buchheit, T.E.; Christenson, T.R.; Schmale, D.T.

1999-01-27T23:59:59.000Z

270

Effects of atmospheres on bonding characteristics of silver and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

temperature. To investigate the effects of atmospheres on the bonding characteristics of ceramic joints brazed with Ag-CuO braze filler metals, alumina joints prepared using a...

271

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-08 April 2015: Fitch Ratings assigns 'AA' ratings to the following Energy...

272

Qualified Energy Conservation Bonds (QECBs) APPENDIX A: QECB...  

Broader source: Energy.gov (indexed) [DOE]

Qualified energy conservation bonds appendices. Author: U. S. Department of Energy Appendix A: QECB Counsel, Underwriters, Banks and Trustees More Documents & Publications...

273

Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN. Citation: Shokri A, Y Wang, GA...

274

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Direct Bonded Aluminum (DBA) Substrates (Agreement ID:23278) 2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer...

275

Energetics of Hydrogen Bond Network Rearrangements in Liquid...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly...

276

adhesively bonded shell: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

various conditions, including the type of surface preparation, pH of the environmental media, (more) Xu, Dingying 2004-01-01 2 Bond Characteristics and Qualifications of...

277

On the reliability of nanoindentation hardness of Al{sub 2}O{sub 3} films grown on Si-wafer by atomic layer deposition  

SciTech Connect (OSTI)

The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al{sub 2}O{sub 3} films having thickness varying from 10 to 600?nm were deposited on a single-side polished silicon wafer at 300?°C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8?nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20?nm and the nanoindentation hardness is about 11?GPa independent of film thickness.

Liu, Xuwen, E-mail: xuwen.liu@aalto.fi; Haimi, Eero; Hannula, Simo-Pekka [Department of Materials Science and Engineering, Aalto University School of Chemical Technology, Vuorimiehentie 2A, FI-00076 Espoo (Finland); Ylivaara, Oili M. E.; Puurunen, Riikka L. [VTT Technical Research Centre of Finland, Tietotie 3, FI-02044 Espoo (Finland)

2014-01-15T23:59:59.000Z

278

Department of Biomedical Engineering BME 479: BioMEMS: Introduction to Microfabrication  

E-Print Network [OSTI]

, oxidation, diffusion, ion implantation, and wafer bonding will be discussed for various materials orientation and doping. Lecture 8. Ion implantation and diffusion. Simulation of implantation and diffusion. Ohmic contacts. Lecture 12. Bonding of silicon wafers. Fusion bonding. Anodic bonding. Thermocompression

Bieber, Michael

279

WILDLIFE REFUGE BACA NATIONAL  

E-Print Network [OSTI]

Rio Grande National Forest Rio Grande National Forest San Isabel National Forest Solar Energy Study Great Sand Dunes National Preserve 285 160 160 160 285 Carson National Forest Grand Mesa National Forest Note 2) (As of 6/5/2009) Solar Energy Study Area (As of 6/5/2009) BLM Lands Being Analyzed for Solar

Laughlin, Robert B.

280

Final Environmental Impact Statement for the Treatment and Management of Sodium-Bonded Spent Nuclear Fuel  

SciTech Connect (OSTI)

DOE is responsible for the safe and efficient management of its sodium-bonded spent nuclear fuel. This fuel contains metallic sodium, a highly reactive material; metallic uranium, which is also reactive; and in some cases, highly enriched uranium. The presence of reactive materials could complicate the process of qualifying and licensing DOE's sodium-bonded spent nuclear fuel inventory for disposal in a geologic repository. Currently, more than 98 percent of this inventory is located at the Idaho National Engineering and Environmental Laboratory (INEEL), near Idaho Falls, Idaho. In addition, in a 1995 agreement with the State of Idaho, DOE committed to remove all spent nuclear fuel from Idaho by 2035. This EIS evaluates the potential environmental impacts associated with the treatment and management of sodium-bonded spent nuclear fuel in one or more facilities located at Argonne National Laboratory-West (ANL-W) at INEEL and either the F-Canyon or Building 105-L at the Savannah River Site (SRS) near Aiken, South Carolina. DOE has identified and assessed six proposed action alternatives in this EIS. These are: (1) electrometallurgical treatment of all fuel at ANL-W, (2) direct disposal of blanket fuel in high-integrity cans with the sodium removed at ANL-W, (3) plutonium-uranium extraction (PUREX) processing of blanket fuel at SRS, (4) melt and dilute processing of blanket fuel at ANL-W, (5) melt and dilute processing of blanket fuel at SRS, and (6) melt and dilute processing of all fuel at ANL-W. In addition, Alternatives 2 through 5 include the electrometallurgical treatment of driver fuel at ANL-W. Under the No Action Alternative, the EIS evaluates both the continued storage of sodium-bonded spent nuclear fuel until the development of a new treatment technology or direct disposal without treatment. Under all of the alternatives, the affected environment is primarily within 80 kilometers (50 miles) of spent nuclear fuel treatment facilities. Analyses indicate little difference in the environmental impacts among alternatives. DOE has identified electrometallurgical treatment as its Preferred Alternative for the treatment and management of all sodium-bonded spent nuclear fuel, except for the Fermi-1 blanket fuel. The No Action Alternative is preferred for the Fermi-1 blanket spent nuclear fuel.

N /A

2000-08-04T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Method of bonding single crystal quartz by field-assisted bonding  

DOE Patents [OSTI]

The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

Curlee, Richard M. (Tijeras, NM); Tuthill, Clinton D. (Edgewood, NM); Watkins, Randall D. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

282

Quantum Finance Hamiltonian for Coupon Bond European and Barrier Options  

E-Print Network [OSTI]

Quantum Finance Hamiltonian for Coupon Bond European and Barrier Options Belal E. Baaquie RMI are financial derivatives that can be analyzed in the Hamiltonian formulation of quantum finance. Forward-2963 Fax: (65) 6777-6126 Email: phybeb@nus.edu.sg #12;Quantum Finance Hamiltonian for Coupon Bond European

Chaudhuri, Sanjay

283

July 18, 2012 Qualified Energy Conservation Bond (QECB) Update: New  

E-Print Network [OSTI]

July 18, 2012 Qualified Energy Conservation Bond (QECB) Update: New Guidance from the U.S. Department of Treasury and the Internal Revenue Service Qualified Energy Conservation Bonds (QECBs a range of energy conservation projects at very attractive borrowing rates over long contract terms

284

BOND PROPERTIES OF CFCC PRESTRESSING STRANDS IN PRETENSIONED CONCRETE BEAMS  

E-Print Network [OSTI]

BOND PROPERTIES OF CFCC PRESTRESSING STRANDS IN PRETENSIONED CONCRETE BEAMS by Nolan G. Domenico plastic prestressing strands (CFCC) in pretensioned concrete beams. The bond characteristics are examined for 15.2 mm diameter and 12.5 mm diameter seven-wire CFCC strands. Ten prestressed concrete beams

285

Time- and temperature-dependent failures of a bonded joint  

SciTech Connect (OSTI)

Time and temperature dependent properties of a tubular lap bonded joint are reported. The joint bonds a cast iron rod and a composite pipe together with an epoxy type of an adhesive material containing chopped glass fiber. A new fabrication method is proposed.

Sihn, Sangwook; Miyano, Yasushi; Tsai, S.W. [Stanford Univ., Palo Alto, CA (United States)

1997-07-01T23:59:59.000Z

286

Electrically conductive resinous bond and method of manufacture  

DOE Patents [OSTI]

A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40 to 365/sup 0/C to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

Snowden, T.M. Jr.; Wells, B.J.

1985-01-01T23:59:59.000Z

287

Clean renewable energy bonds (CREBs) present a low-cost opportunity for public entities to issue bonds to finance  

E-Print Network [OSTI]

Clean renewable energy bonds (CREBs) present a low-cost opportunity for public entities to issue bonds to finance renewable energy projects. The federal government lowers the cost of debt by providing created under the Energy Tax Incentives Act of 2005 (and detailed in Internal Revenue Code Section 54

288

Theoretical Electron Density Distributions for Fe-and Cu-Sulfide Earth Materials: A Connection between Bond Length, Bond Critical Point Properties, Local Energy Densities,  

E-Print Network [OSTI]

, Biomolecular and Chemical Sciences, UniVersity of Western Australia, Australia ReceiVed: August 7, 2006 between Bond Length, Bond Critical Point Properties, Local Energy Densities, and Bonded Interactions G. V; In Final Form: December 6, 2006 Bond critical point and local energy density properties together with net

Downs, Robert T.

289

Transient-Liquid-Phase (TLP) Bonding of Al2O3 Using Nb-based Multilayer Interlayers  

E-Print Network [OSTI]

Alumina Diffusion Bonding and Titanium Active Brazing.Requirements for Diffusion Bonding Titanium. In: Jaffee RI,O 3 -Titanium Adhesion in the View of the Diffusion Bonding

Hong, Sung Moo

2009-01-01T23:59:59.000Z

290

Transient-Liquid-Phase (TLP) Bonding of Al2O3 Using Nb-based Multilayer Interlayers  

E-Print Network [OSTI]

p. 539-44. Derby B. Diffusion Bonding. In: Nicholas M (ed).Requirements for Diffusion Bonding Titanium. In: Jaffee RI,Contact During Diffusion Bonding. Metallurgical Transactions

Hong, Sung Moo

2009-01-01T23:59:59.000Z

291

E-Print Network 3.0 - adhesively bonded lap Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The lap-shear strengths of adhesively bonded polystyrene (PS), high-density polyethylene (HDPE... bonded in a lap-shear geometry. The bonded area of adhesion was nominally...

292

Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits  

E-Print Network [OSTI]

Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ...

Leong, Hoi Liong

293

Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional Vibrational Stimulated Echoes  

E-Print Network [OSTI]

Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional, USA (Received 24 February 2003; published 3 December 2003) Hydrogen bond dynamics are explicated hydrogen bonded network are measured with ultrashort (

Fayer, Michael D.

294

Brookhaven National Laboratory National Synchrotron Light Source  

E-Print Network [OSTI]

Brookhaven National Laboratory National Synchrotron Light Source Number: Revision: LS-ESH-0027 06 copy of this file is the one on-line in the NSLS ESH website. Before using a printed copy, verify that it is the most current version by checking the document issue date on the NSLS ESH website. BROOKHAVEN NATIONAL

Ohta, Shigemi

295

Bonding Low-density Nanoporous Metal Foams Using Sputtered Solder  

SciTech Connect (OSTI)

A method has been developed for bonding low-density nanoporous metal foam components to a substrate using solder that is sputtered onto the surfaces. Metal foams have unusual properties that make them excellent choices for many applications, and as technologies for processing these materials are evolving, their use in industry is increasing dramatically. Metal foams are lightweight and have advantageous dynamic properties, which make them excellent choices for many structural applications. They also provide good acoustic damping, low thermal conductivity, and excellent energy absorption characteristics. Therefore, these materials are commonly used in the automotive, aerospace, construction, and biomedical industries. The synthesis of nanoporous metal foams with a cell size of less then 1 {micro}m is an emerging technology that is expected to lead to widespread application of metal foams in microdevices, such as sensors and actuators. One of the challenges to manufacturing components from metal foams is that they can be difficult to attach to other structures without degrading their properties. For example, traditional liquid adhesives cannot be used because they are absorbed into foams. The problem of bonding or joining can be particularly difficult for small-scale devices made from nanoporous foam, due to the requirement for a thin bond layer. The current study addresses this problem and develops a method of soldering a nanoporous metal foam to a substrate with a bond thickness of less than 2 {micro}m. There are many applications that require micro-scale metal foams precisely bonded to substrates. This study was motivated by a physics experiment that used a laser to drive a shock wave through an aluminum foil and into a copper foam, in order to determine the speed of the shock in the copper foam. To avoid disturbing the shock, the interface between the copper foam and the aluminum substrate had to be as thin as possible. There are many other applications that could benefit from the bonding technology developed in this study, such as small-scale lightweight structural members, high-strength thermal insulating layers for electronics, and micro-scale mechanical dampers, to name but a few. Each of these applications requires one or more small metal foam components precisely bonded to a substrate. Several methods for bonding metal foam components have been developed by previous researchers. Macroscopic metal foam parts have been successfully bonded by laser welding to create T-sections and butt joints. Ultrasonic welding has been used to join aluminum sheet metal to aluminum foam for structural applications. These methods work well for bonding large foam components, but reducing these methods to a smaller length scale would be challenging. One method that has shown great potential for bonding layers of metal foams to substrates is a brazing process that uses a sputter-deposited interface material. Shirzadi et al.[9] have demonstrated bonds between stainless steel foam and a stainless steel substrate using a layer of copper-titanium filler metal that is sputtered onto the interface surfaces. The foam pieces that they bonded were approximately 10 mm in diameter and 10 mm thick with a cell size of approximately 200 {micro}m. After depositing the filler material, pressing the materials together, and heating them with an induction heater, bonds were achieved without causing significant damage to the foam. The current study also uses a sputter-deposited interface material to bond foam to a substrate. However, in contrast to previous work, the current study examines bonding microscale pieces of fragile nanoporous metal foam. In this study, a method is developed to bond a thin sheet of fragile, low-density nanoporous copper foam to an aluminum foil substrate of thickness 40 {micro}m. By sputter depositing an indium-silver alloy onto the foam and the substrate, a solder joint with a thickness of less than 2 {micro}m was achieved.

Bono, M; Cervantes, O; Akaba, C; Hamza, A; Foreman, R; Teslich, N

2007-08-21T23:59:59.000Z

296

Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen Bonds and An Alternative to the Low Barrier Hydrogen-Bond Proposal  

SciTech Connect (OSTI)

We report quantifying the strengths of different types of hydrogen bonds in hydrogen bond networks (HBNs) via measurement of the adiabatic electron detachment energy of the conjugate base of a small covalent polyol model compound (i.e., (HOCH2CH2CH(OH)CH2)2CHOH) in the gas phase and the pKa of the corresponding acid in DMSO. The latter result reveals that the hydrogen bonds to the charged center and those that are one solvation shell further away (i.e., primary and secondary) provide 5.3 and 2.5 pKa units of stabilization per hydrogen bond in DMSO. Computations indicate that these energies increase to 8.4 and 3.9 pKa units in benzene and that the total stabilizations are 16 (DMSO) and 25 (benzene) pKa units. Calculations on a larger linear heptaol (i.e., (HOCH2CH2CH(OH)CH2CH(OH)CH2)2CHOH) reveal that the terminal hydroxyl groups each contribute 0.6 pKa units of stabilization in DMSO and 1.1 pKa units in benzene. All of these results taken together indicate that the presence of a charged center can provide a powerful energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN.

Shokri, Alireza; Wang, Yanping; O'Doherty, George A.; Wang, Xue B.; Kass, Steven R.

2013-11-27T23:59:59.000Z

297

Semi-flexible hydrogen-bonded and non-hydrogen bonded lattice polymers  

E-Print Network [OSTI]

We investigate the addition of stiffness to the lattice model of hydrogen-bonded polymers in two and three dimensions. We find that, in contrast to polymers that interact via a homogeneous short-range interaction, the collapse transition is unchanged by any amount of stiffness: this supports the physical argument that hydrogen bonding already introduces an effective stiffness. Contrary to possible physical arguments, favouring bends in the polymer does not return the model's behaviour to that comparable to the semi-flexible homogeneous interaction model, where the canonical $\\theta$-point occurs for a range of parameter values. In fact, for sufficiently large bending energies the crystal phase disappears altogether, and no phase transition of any type occurs. We also compare the order-disorder transition from the globule phase to crystalline phase in the semi-flexible homogeneous interaction model to that for the fully-flexible hybrid model with both hydrogen and non-hydrogen like interactions. We show that these phase transitions are of the same type and are a novel polymer critical phenomena in two dimensions. That is, it is confirmed that in two dimensions this transition is second-order, unlike in three dimensions where it is known to be first order. We also estimate the crossover exponent and show that there is a divergent specific heat, finding $\\phi=0.7(1)$ or equivalently $\\alpha=0.6(2)$. This is therefore different from the $\\theta$ transition, for which $\\alpha=-1/3$.

J Krawczyk; AL Owczarek; T Prellberg

2008-07-06T23:59:59.000Z

298

Dinuclear Metalloradicals Featuring Unsupported Metal-Metal Bonds...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(PNNL) is a multiprogram national laboratory operated for DOE by Battelle. The EPR and computational studies were performed using EMSL, a national scientific user...

299

Nevada National Security Site  

Broader source: Energy.gov [DOE]

HISTORYIn 1950, President Truman established what is now known as the Nevada National Security Site (NNSS) to perform nuclear weapons testing activities.  In support of national defense initiatives...

300

National Science Bowl Finals  

SciTech Connect (OSTI)

National Science Bowl finals and awards at the National Building Museum in Washington D.C. Monday 5/3/2010

2010-05-03T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

National Energy Policy (Complete)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energy Policy May 2001 Report of the National Energy Policy Development Group Reliable, Affordable, and Environmentally Sound Energy for America's Future Report of the National...

302

National Science Bowl Finals  

ScienceCinema (OSTI)

National Science Bowl finals and awards at the National Building Museum in Washington D.C. Monday 5/3/2010

None

2010-09-01T23:59:59.000Z

303

National Nuclear Security Administration  

Broader source: Energy.gov (indexed) [DOE]

and Related Structures within TA-3 at Los Alamos National Laboratory, Los Alamos, New Mexico U. S. Department of Energy National Nuclear Security Administration Los Alamos Area...

304

E-Print Network 3.0 - affects durably bonding Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

adhesive layers are less affected, creep behavior of adhesively bonded joints... ABSTRACT SMITH, GLEN. Bond Characteristics and Qualifications of Adhesives for ... Source:...

305

E-Print Network 3.0 - adhesive bond strength Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The lap-shear strengths of adhesively bonded polystyrene (PS), high-density polyethylene (HDPE... 12;strength of the substrate, or the adhesive strength of the bond 9....

306

E-Print Network 3.0 - amide bonds stabilize Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amide-Amide and Amide-Water Hydrogen Bonds Summary: Bonds: Implicationsfor Protein Folding and Stability Eric S.Eberhardt and Ronald T. Rained Department... folds, many of...

307

Surface Modification by Atmospheric Pressure Plasma for Improved Bonding  

E-Print Network [OSTI]

prepared using (a) the IPA wipe (control), (b) sanding, (c)of aluminum alloy 2024: a) IPA wiped, b) sanded with 180bond primer with a) the IPA wipe (control), b) sanding, c)

Williams, Thomas Scott

2013-01-01T23:59:59.000Z

308

Spectroscopic investigations of hydrogen bond dynamics in liquid water  

E-Print Network [OSTI]

Many of the remarkable physical and chemical properties of liquid water are due to the strong influence hydrogen bonds have on its microscopic dynamics. However, because of the fast timescales involved, there are relatively ...

Fecko, Christopher J., 1975-

2004-01-01T23:59:59.000Z

309

Bond resonance energy and verification of the isolated pentagon rule  

SciTech Connect (OSTI)

The isolated pentagon rule (IPR) states that fullerenes with isolated pentagons are kinetically much more stable than their fused pentagon counterparts. This rule can be verified in terms of a graph-theoretically defined bond resonance energy. In general, a {pi} bond shared by two pentagons has a large negative bond resonance energy, thus contributing significantly to the increase in kinetic instability or chemical reactivity of the molecule. The existence of such highly antiaromatic local structures sharply distinguishes IPR-violating fullerenes from isolated-pentagon isomers. {pi}bonds shared by two pentagons are shared by many antiaromatic conjugated circuits but not by relatively small aromatic conjugated circuits. 39 refs., 3 figs., 5 tabs.

Aihara, Jun Ichi [Shizuoka Univ. (Japan)

1995-04-12T23:59:59.000Z

310

Qualified Energy Conservation Bond (QECB) Update: New Guidance...  

Broader source: Energy.gov (indexed) [DOE]

the U.S. Department of Treasury and the Internal Revenue Service Qualified Energy Conservation Bond (QECB) Update: New Guidance from the U.S. Department of Treasury and the...

311

aliphatic ch bonds: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2015-01-01 39 H-atom high-n Rydberg time-of-flight spectroscopy of CH bond fission in acrolein dissociated at 193 nm Chemistry Websites Summary: H-atom high-n Rydberg...

312

Creep effects in diffusion bonding of oxygen-free copper  

E-Print Network [OSTI]

Diffusion is the transport of atoms or particles through the surrounding material. Various microstructural changes in metals are based on the diffusion phenomena. In solid metals the diffusion is closely related to crystallographic defects. In single-component metals the dominant mechanism of diffusion is the vacancy mechanism. Diffusion bonding is a direct technological application of diffusion. It is an advanced solidstate joining process in which the surfaces of two components are brought to contact with each other and heated under a pressing load in a controlled environment. During the process, the contact surfaces are bonded by atomic diffusion across the interface and as a result, one solid piece is formed. The condition of high temperature and low applied stress combined with relatively long process duration enables the creep effects to take place in bonded metals. Furthermore, creep causes unwanted permanent deformations in the bonded components. Some authors suggest that there could be a threshold fo...

Moilanen, Antti

313

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids  

SciTech Connect (OSTI)

We develop a resummed thermodynamic perturbation theory for bond cooperativity in associating fluids by extension of Wertheim's multi-density formalism. We specifically consider the case of an associating hard sphere with two association sites and both pairwise and triplet contributions to the energy, such that the first bond in an associated cluster receives an energy ??{sup (1)} and each subsequent bond in the cluster receives an energy ??{sup (2)}. To test the theory we perform new Monte Carlo simulations for potentials of this type. Theory and simulation are found to be in excellent agreement. We show that decreasing the energetic benefit of hydrogen bonding can actually result in a decrease in internal energy in the fluid. We also predict that when ?{sup (1)} = 0 and ?{sup (2)} is nonzero there is a transition temperature where the system transitions from a fluid of monomers to a mixture of monomers and very long chains.

Marshall, Bennett D., E-mail: bennettd1980@gmail.com; Chapman, Walter G. [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)] [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)

2013-12-07T23:59:59.000Z

314

FITCH RATES PORT OF MORROW (OR) TRANSMISSION FACILITIES REV BONDS...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FITCH RATES PORT OF MORROW (OR) TRANSMISSION FACILITIES REV BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-24 November 2014: Fitch Ratings assigns 'AA' ratings to the Port of...

315

Low-Cost Financing with Clean Renewable Energy Bonds  

Broader source: Energy.gov [DOE]

Contains information from the TAP Webcast on June 24, 2009 on clean renewable energy bonds from Claire Kreycik on feed-in tariffs, an economic resource for developing renewable energy.

316

Application of Social Impact Bonds in Built Infrastructure Sustainability Projects  

E-Print Network [OSTI]

This study examines a first look at the implementation of Social Impact Bonds (SIB) for sustainability projects by comparing two cases. The cases are described using System Dynamic (SD) modeling to portray the feedback structures and characteristics...

White, Robert Joseph

2014-05-01T23:59:59.000Z

317

Foreign trade zones and bonded warehouses for luxury goods  

E-Print Network [OSTI]

We explore and compare the benefits of establishing and operating Foreign Trade Zones (FTZs) and Bonded Warehouses (BWs) for luxury goods in North America, using the case of the distribution network of Ralph Lauren Corporation ...

Petrova, Nadya (Nadya Naydenova)

2013-01-01T23:59:59.000Z

318

Mpemba paradox: Hydrogen bond memory and water-skin supersolidity  

E-Print Network [OSTI]

Numerical reproduction of measurements, experimental evidence for skin super-solidity and hydrogen-bond memory clarified that Mpemba paradox integrates the heat emission-conduction-dissipation dynamics in the source-path-drain cycle system.

Chang Q Sun

2015-01-05T23:59:59.000Z

319

Ultrafast structural fluctuations and rearrangements of water's hydrogen bonded network  

E-Print Network [OSTI]

Aqueous chemistry is strongly influenced by water's ability to form an extended network of hydrogen bonds. It is the fluctuations and rearrangements of this network that stabilize reaction products and drive the transport ...

Loparo, Joseph J. (Joseph John)

2007-01-01T23:59:59.000Z

320

Bond Distortions in Armchair Type Single Wall Carbon Nanotubes  

E-Print Network [OSTI]

The energy band gap structure and stability of (3,3) and (10,10) nanotubes have been comparatively investigated in the frameworks of the traditional form of the Su-Schrieffer-Heeger (SSH) model and a toy model including the contributions of bonds of different types to the SSH Hamiltonian differently. Both models give the same energy band gap structure but bond length distortions in different characters for the nanotubes.

N. Sunel; E. Rizaoglu; K. Harigaya; O. Ozsoy

2005-03-03T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Microbial cleavage of organic C-S bonds  

DOE Patents [OSTI]

A microbial process is described for selective cleavage of organic C-S bonds which may be used for reducing the sulfur content of sulfur-containing organic carbonaceous materials. Microorganisms of Rhodococcus rhodochrous and Bacillus sphaericus have been found which have the ability of selective cleavage of organic C-S bonds. Particularly preferred microorganisms are Rhodococcus rhodochrous strain ATCC 53968 and Bacillus sphaericus strain ATCC 53969 and their derivatives.

Kilbane, J.J. II.

1994-10-25T23:59:59.000Z

322

BN Bonded BN fiber article and method of manufacture  

DOE Patents [OSTI]

A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising a bonding compound selected from boron oxide and boric acid and a structural fiber selected from the group consisting of boron oxide, boron nitride and partially nitrided boron oxide fibers, heating the composition in an anhydrous gas to a temperature above the melting point of the compound and nitriding the resulting article in ammonia gas.

Hamilton, Robert S. (Youngstown, NY)

1981-08-18T23:59:59.000Z

323

Mercury stabilization in chemically bonded phosphate ceramics  

SciTech Connect (OSTI)

Mercury stabilization and solidification is a significant challenge for conventional stabilization technologies. This is because of the stringent regulatory limits on leaching of its stabilized products. In a conventional cement stabilization process, Hg is converted at high pH to its hydroxide, which is not a very insoluble compound; hence the preferred route for Hg sulfidation to convert it into insoluble cinnabar (HgS). Unfortunately, efficient formation of this compound is pH-dependent. At a high pH, one obtains a more soluble Hg sulfate, in a very low pH range, insufficient immobilization occurs because of the escape of hydrogen sulfide, while efficient formation of HgS occurs only in a moderately acidic region. Thus, the pH range of 4 to 8 is where stabilization with Chemically Bonded Phosphate Ceramics (CBPC) is carried out. This paper discusses the authors experience on bench-scale stabilization of various US Department of Energy (DOE) waste streams containing Hg in the CBPC process. This process was developed to treat DOE's mixed waste streams. It is a room-temperature-setting process based on an acid-base reaction between magnesium oxide and monopotassium phosphate solution that forms a dense ceramic within hours. For Hg stabilization, addition of a small amount (< 1 wt.%) of Na{sub 2}S or K{sub 2}S is sufficient in the binder composition. Here the Toxicity Characteristic Leaching Procedure (TCLP) results on CBPC waste forms of surrogate waste streams representing secondary Hg containing wastes such as combustion residues and Delphi DETOX{trademark} residues are presented. The results show that although the current limit on leaching of Hg is 0.2 mg/L, the results from the CBPC waste forms are at least one order lower than this stringent limit. Encouraged by these results on surrogate wastes, they treated actual low-level Hg-containing mixed waste from their facility at Idaho. TCLP results on this waste are presented here. The efficient stabilization in all these cases is attributed to chemical immobilization as both a sulfide (cinnabar) and a phosphate, followed by its physical encapsulation in a dense matrix of the ceramic.

Wagh, A. S.; Singh, D.; Jeong, S. Y.

2000-04-04T23:59:59.000Z

324

Bonded Bracket Assmebly for Frameless Solar Panels  

SciTech Connect (OSTI)

In February 2011 the US Department of Energy announced their new Sunshot Initiative. The Sunshot goal is to reduce the total cost of solar energy systems by about 75 percent before the end of the decade. The DOE estimated that a total installed cost of $1 per watt for photovoltaic systems would be equivalent to 6���¢/kilowatt hour (kWh) for energy available from the grid. The DOE also estimated that to meet the $1 per watt goal, PV module costs would need to be reduced to $.50 per watt, balance of systems costs would need to be reduced to $.40 per watt, and power electronic costs would need to reach $.10 per watt. To address the BOS balance of systems cost component of the $1 per watt goal, the DOE announced a funding opportunity called (BOS-X) Extreme Balance of System Hardware Cost Reductions. The DOE identified eight areas within the total BOS costs: 1) installation labor, 2) installation materials, 3) installation overhead and profit, 4) tracker, 5) permitting and commissioning, 6) site preparation, 7) land acquisition, 8) sales tax. The BOS-X funding announcement requested applications in four specific topics: Topic 1: Transformational Building Integrated Photovoltaic (BIPV) Modules Topic 2: Roof and Ground Mount Innovations Topic 3: Transformational Photovoltaic System Designs Topic 4: Development of New Wind Load Codes for PV Systems The application submitted by ARaymond Tinnerman reflected the requirements listed in Topic #2, Roof and Ground Mount Innovations. The goal of topic #2 was to develop technologies that would result in the extreme reduction of material and labor costs associated with applications that require physical connections and attachments to roof and ground mount structures. The topics researched in this project included component cost reduction, labor reduction, weight reduction, wiring innovations, and alternative material utilization. The project objectives included: 1) The development of an innovative quick snap bracket assembly that would be bonded to frameless PV modules for commercial rooftop installations. 2) The development of a composite pultruded rail to replace traditional racking materials. 3) In partnership with a roofing company, pilot the certification of a commercial roof to be solar panel compliant, eliminating the need for structural analysis and government oversight resulting in significantly decreased permitting costs. 4) Reduce the sum of all cost impacts in topic #2 from a baseline total of $2.05/watt to $.34/watt.

Murray, Todd

2013-01-30T23:59:59.000Z

325

National Renewable Energy Laboratory  

E-Print Network [OSTI]

National Renewable Energy Laboratory Innovation for Our Energy Future ponsorship Format Reversed Color:White rtical Format Reversed-A ertical Format Reversed-B National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future National Renewable Energy Laboratory

326

Mojave National Preserve Joshua Tree National Park  

E-Print Network [OSTI]

Forest (SBNF) Angeles National Forest (ANF) Cleveland National Forest (CNF) CNF CNF SBNF ANF CACA 049111°0'0"N 34°0'0"N 34°0'0"N 33°0'0"N 33°0'0"N California Desert Conservation Area BLM Solar Energy Project Contingent Corridor Deleted Corridor Land Status BLM National Park Service Forest Service Military USFWS

Laughlin, Robert B.

327

Sandia National Laboratories: National Rotor Testbed Functional...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the National Rotor Testbed: An Aeroelastically Relevant Research-Scale Wind Turbine Rotor." Approximately 60 researchers from various institutions and countries attended...

328

PROPOSED MODIFICATION TO THE ACI 318-02 CODE EQUATION ON BOND STRENGTH FOR MMFX STEEL  

E-Print Network [OSTI]

ST-263-1 PROPOSED MODIFICATION TO THE ACI 318-02 CODE EQUATION ON BOND STRENGTH FOR MMFX STEEL R the bond characteristics of Micro-composite Multi-structural Formable reinforcing steel rebars of the current equation of the ACI 318-02 Code on bond to predict the bond capacity of the MMFX steel rebars

329

Mechanical Study of Copper Bonded at Low Temperature using Spark Plasma Sintering Process  

E-Print Network [OSTI]

is approximatively 6.47 MPa [7]. J. W. Elmer & al [8] have presented a diffusion bonding of high purity copper using a conventional furnace. A series of diffusion bonds was done to determine the relationship between bond strengthMechanical Study of Copper Bonded at Low Temperature using Spark Plasma Sintering Process Bassem

Paris-Sud XI, Université de

330

The C OH O hydrogen bond: A determinant of stability and specificity  

E-Print Network [OSTI]

recovered by hydro- gen bond formation, so hydrogen bonds provide a small or even unfavorable net energy hydro- gen bond has been unclear and its interaction energy has been believed to be small. Recently that apparent carbon hydro- gen bonds cluster frequently at glycine-, serine-, and threonine-rich packing

Senes, Alessandro

331

Thermal Performance and Reliability of Bonded Interfaces for Power Electronics Packaging Applications (Presentation)  

SciTech Connect (OSTI)

This presentation discusses the thermal performance and reliability of bonded interfaces for power electronics packaging applications.

Devoto, D.

2013-07-01T23:59:59.000Z

332

A new hydrogen-bonding potential for the design of proteinRNA interactions predicts specific  

E-Print Network [OSTI]

A new hydrogen-bonding potential for the design of protein­RNA interactions predicts specific-dependent hydrogen-bonding potential based on the statistical analysis of hydrogen-bonding geometries of hydrogen-bonding atom pairs at protein­ nucleic acid interfaces. A scoring function based on the hydrogen

Baker, David

333

Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical Exchange Spectroscopy  

E-Print Network [OSTI]

Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical ExchangeVed: January 12, 2010 Hydrogen-bonded complexes between phenol and phenylacetylene are studied using ultrafast hydrogen bonding acceptor sites (phenyl or acetylene) that compete for hydrogen bond donors in solution

Fayer, Michael D.

334

Novel Chemically-Bonded Phosphate Ceramic Borehole Sealants (Ceramicretes) for Arctic Environments  

SciTech Connect (OSTI)

Novel chemically bonded phosphate ceramic borehole sealant, i.e. Ceramicrete, has many advantages over conventionally used permafrost cement at Alaska North Slope (ANS). However, in normal field practices when Ceramicrete is mixed with water in blenders, it has a chance of being contaminated with leftover Portland cement. In order to identify the effect of Portland cement contamination, recent tests have been conducted at BJ services in Tomball, TX as well as at the University of Alaska Fairbanks with Ceramicrete formulations proposed by the Argonne National Laboratory. The tests conducted at BJ Services with proposed Ceramicrete formulations and Portland cement contamination have shown significant drawbacks which has caused these formulations to be rejected. However, the newly developed Ceramicrete formulation at the University of Alaska Fairbanks has shown positive results with Portland cement contamination as well as without Portland cement contamination for its effective use in oil well cementing operations at ANS.

Shirish Patil; Godwin A. Chukwu; Gang Chen; Santanu Khataniar

2008-12-31T23:59:59.000Z

335

This paper presents an investigation of power and energy transduction in piezoelectric wafer active sensors (PWAS) on isotropic structure for structural health  

E-Print Network [OSTI]

bonded to the structure successfully emulate the NDE methodology (e.g. pitch-catch, pulse-echo, Figure 1 to a certain extent in classical NDE [2-4]. Viktorov [2] mentioned the transmissibility function between an NDE

Giurgiutiu, Victor

336

Effect of quantum nuclear motion on hydrogen bonding  

SciTech Connect (OSTI)

This work considers how the properties of hydrogen bonded complexes, X–H?Y, are modified by the quantum motion of the shared proton. Using a simple two-diabatic state model Hamiltonian, the analysis of the symmetric case, where the donor (X) and acceptor (Y) have the same proton affinity, is carried out. For quantitative comparisons, a parametrization specific to the O–H?O complexes is used. The vibrational energy levels of the one-dimensional ground state adiabatic potential of the model are used to make quantitative comparisons with a vast body of condensed phase data, spanning a donor-acceptor separation (R) range of about 2.4 ? 3.0 Ĺ, i.e., from strong to weak hydrogen bonds. The position of the proton (which determines the X–H bond length) and its longitudinal vibrational frequency, along with the isotope effects in both are described quantitatively. An analysis of the secondary geometric isotope effect, using a simple extension of the two-state model, yields an improved agreement of the predicted variation with R of frequency isotope effects. The role of bending modes is also considered: their quantum effects compete with those of the stretching mode for weak to moderate H-bond strengths. In spite of the economy in the parametrization of the model used, it offers key insights into the defining features of H-bonds, and semi-quantitatively captures several trends.

McKenzie, Ross H., E-mail: r.mckenzie@uq.edu.au; Bekker, Christiaan [School of Mathematics and Physics, University of Queensland, Brisbane 4072 (Australia)] [School of Mathematics and Physics, University of Queensland, Brisbane 4072 (Australia); Athokpam, Bijyalaxmi; Ramesh, Sai G. [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560 012 (India)] [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560 012 (India)

2014-05-07T23:59:59.000Z

337

Brookhaven National Laboratory National Synchrotron Light Source  

E-Print Network [OSTI]

Brookhaven National Laboratory National Synchrotron Light Source Number: Revision: LS-ESH-0026 4 (ANSI) Hazard Class 3B and 4 laser systems must be documented, reviewed, and approved through use) CrystaLaser Compact Solid State Laser (Class 3B) Location: All four lasers are located in the U2A

Ohta, Shigemi

338

Rhodium-Catalyzed C-C Bond Formation via Heteroatom-Directed C-H Bond Activation  

SciTech Connect (OSTI)

Once considered the 'holy grail' of organometallic chemistry, synthetically useful reactions employing C-H bond activation have increasingly been developed and applied to natural product and drug synthesis over the past decade. The ubiquity and relative low cost of hydrocarbons makes C-H bond functionalization an attractive alternative to classical C-C bond forming reactions such as cross-coupling, which require organohalides and organometallic reagents. In addition to providing an atom economical alternative to standard cross - coupling strategies, C-H bond functionalization also reduces the production of toxic by-products, thereby contributing to the growing field of reactions with decreased environmental impact. In the area of C-C bond forming reactions that proceed via a C-H activation mechanism, rhodium catalysts stand out for their functional group tolerance and wide range of synthetic utility. Over the course of the last decade, many Rh-catalyzed methods for heteroatom-directed C-H bond functionalization have been reported and will be the focus of this review. Material appearing in the literature prior to 2001 has been reviewed previously and will only be introduced as background when necessary. The synthesis of complex molecules from relatively simple precursors has long been a goal for many organic chemists. The ability to selectively functionalize a molecule with minimal pre-activation can streamline syntheses and expand the opportunities to explore the utility of complex molecules in areas ranging from the pharmaceutical industry to materials science. Indeed, the issue of selectivity is paramount in the development of all C-H bond functionalization methods. Several groups have developed elegant approaches towards achieving selectivity in molecules that possess many sterically and electronically similar C-H bonds. Many of these approaches are discussed in detail in the accompanying articles in this special issue of Chemical Reviews. One approach that has seen widespread success involves the use of a proximal heteroatom that serves as a directing group for the selective functionalization of a specific C-H bond. In a survey of examples of heteroatom-directed Rh catalysis, two mechanistically distinct reaction pathways are revealed. In one case, the heteroatom acts as a chelator to bind the Rh catalyst, facilitating reactivity at a proximal site. In this case, the formation of a five-membered metallacycle provides a favorable driving force in inducing reactivity at the desired location. In the other case, the heteroatom initially coordinates the Rh catalyst and then acts to stabilize the formation of a metal-carbon bond at a proximal site. A true test of the utility of a synthetic method is in its application to the synthesis of natural products or complex molecules. Several groups have demonstrated the applicability of C-H bond functionalization reactions towards complex molecule synthesis. Target-oriented synthesis provides a platform to test the effectiveness of a method in unique chemical and steric environments. In this respect, Rh-catalyzed methods for C-H bond functionalization stand out, with several syntheses being described in the literature that utilize C-H bond functionalization in a key step. These syntheses are highlighted following the discussion of the method they employ.

Colby, Denise; Bergman, Robert; Ellman, Jonathan

2010-05-13T23:59:59.000Z

339

Metal-bonded, carbon fiber-reinforced composites  

DOE Patents [OSTI]

Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates. 2 figs.

Sastri, S.A.; Pemsler, J.P.; Cooke, R.A.; Litchfield, J.K.; Smith, M.B.

1996-03-05T23:59:59.000Z

340

Metal-bonded, carbon fiber-reinforced composites  

DOE Patents [OSTI]

Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates.

Sastri, Suri A. (Lexington, MA); Pemsler, J. Paul (Lexington, MA); Cooke, Richard A. (Framingham, MA); Litchfield, John K. (Bedford, MA); Smith, Mark B. (Ipswich, MA)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Students' Interdisciplinary Reasoning about "High-Energy Bonds" and ATP  

E-Print Network [OSTI]

Students' sometimes contradictory ideas about ATP (adenosine triphosphate) and the nature of chemical bonds have been studied in the biology and chemistry education literatures, but these topics are rarely part of the introductory physics curriculum. We present qualitative data from an introductory physics course for undergraduate biology majors that seeks to build greater interdisciplinary coherence and therefore includes these topics. In these data, students grapple with the apparent contradiction between the energy released when the phosphate bond in ATP is broken and the idea that an energy input is required to break a bond. We see that students' perceptions of how each scientific discipline bounds the system of interest can influence how they justify their reasoning about a topic that crosses disciplines. This has consequences for a vision of interdisciplinary education that respects disciplinary perspectives while bringing them into interaction in ways that demonstrate consistency amongst the perspectiv...

Dreyfus, Benjamin W; Sawtelle, Vashti; Svoboda, Julia; Turpen, Chandra; Redish, Edward F

2012-01-01T23:59:59.000Z

342

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O-and OH,,,O-Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate  

E-Print Network [OSTI]

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O- and OH,,,O- Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate (succinamate) and Monohydrogen 1 of amide NH,,,O- and carboxyl OH,,,O- hydrogen bonds were investigated via conformational analysis

Goddard III, William A.

343

The diffusion bonding of silicon carbide and boron carbide using refractory metals  

SciTech Connect (OSTI)

Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 {micro}m to 100 {micro}m) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both {alpha}-SiC and {beta}-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the {alpha}-SiC and {beta}-SiC polytypes were similar.

Cockeram, B.V.

1999-10-01T23:59:59.000Z

344

Argonne National Laboratory's Nondestructive  

E-Print Network [OSTI]

Argonne National Laboratory's Nondestructive Evaluation Technologies NDE #12;Over45yearsexperienceinNondestructiveEvaluation... Argonne National Laboratory's world-renowned researchers have a proven the safe operationof advanced nuclear reactors. Argonne's World-Class Nondestructive Evaluation

Kemner, Ken

345

Implementation of Section 1072 of the National Defense Authorization Act for Fiscal Year 2008  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

This Notice provides guidance for implementing the mandates of Section 1072 of the National Defense Authorization Act for Fiscal Year 2008, commonly referred to as the Bond Amendment. Extended until 9-28-11 by DOE N 251.90 dated 9-28-10. Canceled by DOE O 472.2. Does not cancel other directives.

2009-08-12T23:59:59.000Z

346

National Nuclear Security Administration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FROM: SUBJECT: USIUK Memorandum of Understanding between National Nuclear Security Administration's (NNSA) Associate Administrator for Defense Nuclear Security (AADNS)...

347

National Hydropower Map  

Broader source: Energy.gov [DOE]

High-resolution map produced by Oak Ridge National Laboratory showing hydropower resources throughout the United States.

348

National Nuclear Security Administration Los Alamos National  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational Nuclearhas 'Natitude' | NationalADR services are contractedLawrence National

349

National Supplemental Screening Program | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos(SC)National

350

NATIONAL HYDROGEN ENERGY ROADMAP  

E-Print Network [OSTI]

NATIONAL HYDROGEN ENERGY ROADMAP NATIONAL HYDROGEN ENERGY ROADMAP . . Toward a More Secure and Cleaner Energy Future for America Based on the results of the National Hydrogen Energy Roadmap Workshop to make it a reality. This Roadmap provides a framework that can make a hydrogen economy a reality

351

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids with small bond angles: Effects of steric hindrance and ring formation  

E-Print Network [OSTI]

In this paper we develop a thermodynamic perturbation theory for two site associating fluids which exhibit bond cooperativity. We include both steric hindrance and ring formation such that the equation of state is bond angle dependent. Here the bond angle is the angle separating the centers of the two association sites. As a test, new Monte Carlo simulations are performed, and the theory is found to accurately predict the internal energy as well as the distribution of associated clusters as a function of bond angle and bond cooperativity.

B. D. Marshall; Amin Haghmoradi; W. G. Chapman

2014-04-03T23:59:59.000Z

352

Brookhaven National Laboratory National Synchrotron Light Source  

E-Print Network [OSTI]

CHARACTERISTICS Laser Type (Argon, CO2, etc) Wavelengths ANSI Class Maximum Power of Energy/Pulse Pulse Length. American National Standards Institute (ANSI) Standard for Safe Use of Lasers; (ANSI Z136.1-2000) Laser

Ohta, Shigemi

353

Method of preparation of bonded polyimide fuel cell package  

DOE Patents [OSTI]

Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

Morse, Jeffrey D. (Martinez, CA); Jankowski, Alan (Livermore, CA); Graff, Robert T. (Modesto, CA); Bettencourt, Kerry (Dublin, CA)

2011-04-26T23:59:59.000Z

354

Vibrational Signature of Water Molecules in Asymmetric Hydrogen Bonding Environments  

E-Print Network [OSTI]

Vibrational Signature of Water Molecules in Asymmetric Hydrogen Bonding Environments Chao Zhang contributions of each of the two hydrogen atoms to the vibrational modes 1 and 3 of water molecules the early works on the molecular structure of water, it has been accepted that a water molecule

Guidoni, Leonardo

355

Structural and bonding trends in platinum-carbon clusters  

E-Print Network [OSTI]

. Trends in stability, Pt+-Cx binding energy, doublet-quartet excitation energy, and Pt-C bond lengths were investigated. Explanations for these patterns are provided in terms of orbital interactions and changes imposed on the carbon-chain by the metal...

Miller, Thomas F

2013-02-22T23:59:59.000Z

356

Bond Strength of ASTM A 1035 Grade 100 Reinforcing Steel  

E-Print Network [OSTI]

The bond strength of ASTM A 1035 Grade 100 reinforcing steel is evaluated relative to the values predicted using the development expressions in ACI 318-05 and ACI 408R-03. Sixty-nine beam-splice specimens were tested at the University of Kansas...

Briggs, Michael

2008-04-24T23:59:59.000Z

357

A Single Disulfide Bond Differentiates Aggregation Pathways of 2-Microglobulin  

E-Print Network [OSTI]

simulation; aggregation; domain swapping*Corresponding author Introduction Amyloid fibrils are insolubleA Single Disulfide Bond Differentiates Aggregation Pathways of ß2-Microglobulin Yiwen Chen1 at Chapel Hill Chapel Hill, NC 27599, USA Deposition of wild-type ß2-microglobulin (ß2m) into amyloid

Dokholyan, Nikolay V.

358

WHAT'S GRAPHENE? Mono or few layers of sp2 bonded  

E-Print Network [OSTI]

WHAT'S GRAPHENE? · Mono or few layers of sp2 bonded carbon atoms in a honeycomb lattice 105cm2/Vs at RT. 1 Due to its unique transport properties, graphene is suitable for implementation sampling (EOS) timeresolved spectroscopy to optically pump and THz probe exfoliated graphene ribbons (GR

Mellor-Crummey, John

359

Diffusion limited cluster aggregation with irreversible flexible bonds  

E-Print Network [OSTI]

Irreversible diffusion limited cluster aggregation (DLCA) of hard spheres was simulated using Brownian cluster dynamics. Bound spheres were allowed to move freely within a specified range, but no bond breaking was allowed. The structure and size distribution of the clusters was investigated before gelation. The pair correlation function and the static structure factor of the gels were determined as a function of the volume fraction and time. Bond flexibility led to local densification of the clusters and the gels, with a certain degree of order. At low volume fractions densification of the clusters occurred during their growth, but at higher volume fractions it occurred mainly after gelation. At very low volume fractions, the large scale structure (fractal dimension), size distribution and growth kinetics of the clusters was found to be close to that known for DLCA with rigid bonds. Restructuring of the gels continued for long times, indicating that aging processes in systems with strong attraction do not necessarily involve bond breaking. The mean square displacement of particles in the gels was determined. It is shown to be highly heterogeneous and to increase with decreasing volume fraction.

Sujin Babu; Jean-Christophe Gimel; Taco Nicolai

2008-01-29T23:59:59.000Z

360

Advance Refundings of Municipal Bonds Columbia Business School  

E-Print Network [OSTI]

Advance Refundings of Municipal Bonds Andrew Ang Columbia Business School and NBER Richard C. Green of Vineer Bhansali, Trevor Harris, Tal Heppenstall, Andrew Kalotay, Kemp Lewis, Paul Luhmann, Matt of colleagues, especially Jennifer Carpenter, Dan Li, Norman Sch¨urhoff, and Chester Spatt, along with seminar

Sadeh, Norman M.

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Bonded labour The Dalits of Nepal are a marginalised  

E-Print Network [OSTI]

Bonded labour The Dalits of Nepal are a marginalised group of people who have suffered systematic that, while illegal, is still widespread in remote rural areas of Nepal. To meet their basic needs in their neighbour- hood. Referred to in Nepal as Haliya/ Haruwa and Charuwa, they have to plough the landlords' land

Richner, Heinz

362

Water inertial reorientation: Hydrogen bond strength and the angular potential  

E-Print Network [OSTI]

Water inertial reorientation: Hydrogen bond strength and the angular potential David E. Moilanen) The short-time orientational relaxation of water is studied by ultrafast infrared pump-probe spectroscopy with recent molecular dynamics simulations employing the simple point charge-extended water model at room

Fayer, Michael D.

363

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids  

E-Print Network [OSTI]

We develop a resummed thermodynamic perturbation theory for bond cooperativity in associating fluids by extension of Wertheim's multi - density formalism. We specifically consider the case of an associating hard sphere with two association sites and both pairwise and triplet contributions to the energy. To test the theory we perform new monte carlo simulations. Theory and simulation are found to be in excellent agreement.

B. D. Marshall; W. G. Chapman

2013-09-18T23:59:59.000Z

364

alteredintramolecular hydrogen-bonding pattern: Topics by E-print...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

alteredintramolecular hydrogen-bonding pattern First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1...

365

Hydrogen Bonding Increases Packing Density in the Protein Interior  

E-Print Network [OSTI]

Hydrogen Bonding Increases Packing Density in the Protein Interior David Schell,1,2 Jerry Tsai,1 J System Health Science Center, College Station, Texas 77843-1114 ABSTRACT The contribution of hydrogen to the stability, but experimental studies show that bury- ing polar groups, especially those that are hydrogen

366

Concept generation of dynamic systems using bond graphs  

E-Print Network [OSTI]

REPRESENTATIONS OF IMMITTANCES . . . Immittance synthesis in design Conventional immit tance synthesis techniques by Foster and Cauer Immittance synthesis with bond graphs . . . . . . . . . . . . . Example - Synthesis of two frequency absorber... . . . . . . . . . 35 . 35 . 38 . . . . . . 40 . . . . . . 49 TABLE OF CONTENTS (Continued) CHAPTER Page V PHYSICAL REPRESENTATIONS OF TRANSFER FUNCTIONS Transfer function synthesis in design . . . . . . . . . . . General procedure Conditions for passive...

Krishnan, S

1990-01-01T23:59:59.000Z

367

Sandia National Laboratories: Phenomenological Modeling  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

368

Sandia National Laboratories: Uncertainty Analysis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

369

Sandia National Laboratories: Fire Science  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

370

Sandia National Laboratories: Experimental Testing  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

371

Sandia National Laboratories: Transportation Safety  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(NESL) Brayton Lab SCO2 Brayton Cycle Technology Videos Heat Exchanger Development Diffusion Bonding Characterization Mechanical Testing Deep Borehole Disposal Nuclear...

372

Development and validation of bonded composite doubler repairs for commercial aircraft.  

SciTech Connect (OSTI)

A typical aircraft can experience over 2,000 fatigue cycles (cabin pressurizations) and even greater flight hours in a single year. An unavoidable by-product of aircraft use is that crack, impact, and corrosion flaws develop throughout the aircraft's skin and substructure elements. Economic barriers to the purchase of new aircraft have placed even greater demands on efficient and safe repair methods. The use of bonded composite doublers offers the airframe manufacturers and aircraft maintenance facilities a cost effective method to safely extend the lives of their aircraft. Instead of riveting multiple steel or aluminum plates to facilitate an aircraft repair, it is now possible to bond a single Boron-Epoxy composite doubler to the damaged structure. The FAA's Airworthiness Assurance Center at Sandia National Labs (AANC), Boeing, and Federal Express completed a pilot program to validate and introduce composite doubler repair technology to the U.S. commercial aircraft industry. This project focused on repair of DC-10 fuselage structure and its primary goal was to demonstrate routine use of this repair technology using niche applications that streamline the design-to-installation process. As composite doubler repairs gradually appear in the commercial aircraft arena, successful flight operation data is being accumulated. These commercial aircraft repairs are not only demonstrating the engineering and economic advantages of composite doubler technology but they are also establishing the ability of commercial maintenance depots to safely adopt this repair technique. This report presents the array of engineering activities that were completed in order to make this technology available for widespread commercial aircraft use. Focused laboratory testing was conducted to compliment the field data and to address specific issues regarding damage tolerance and flaw growth in composite doubler repairs. Fatigue and strength tests were performed on a simulated wing repair using a substandard design and a flawed installation. In addition, the new Sol-Gel surface preparation technique was evaluated. Fatigue coupon tests produced Sol-Gel results that could be compared with a large performance database from conventional, riveted repairs. It was demonstrated that not only can composite doublers perform well in severe off-design conditions (low doubler stiffness and presence of defects in doubler installation) but that the Sol-Gel surface preparation technique is easier and quicker to carry out while still producing optimum bonding properties. Nondestructive inspection (NDI) methods were developed so that the potential for disbond and delamination growth could be monitored and crack growth mitigation could be quantified. The NDI methods were validated using full-scale test articles and the FedEx aircraft installations. It was demonstrated that specialized NDI techniques can detect flaws in composite doubler installations before they reach critical size. Probability of Detection studies were integrated into the FedEx training in order to quantify the ability of aircraft maintenance depots to properly monitor these repairs. In addition, Boeing Structural Repair and Nondestructive Testing Manuals were modified to include composite doubler repair and inspection procedures. This report presents the results from the FedEx Pilot Program that involved installation and surveillance of numerous repairs on operating aircraft. Results from critical NDI evaluations are reported in light of damage tolerance assessments for bonded composite doublers. This work has produced significant interest from airlines and aircraft manufacturers. The successful Pilot Program produced flight performance history to establish the durability of bonded composite patches as a permanent repair on commercial aircraft structures. This report discusses both the laboratory data and Pilot Program results from repair installations on operating aircraft to introduce composite doubler repairs into mainstream commercial aircraft use.

Roach, Dennis Patrick; Rackow, Kirk A.

2007-07-01T23:59:59.000Z

373

E-Print Network 3.0 - amide bond formation Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Irvine Collection: Chemistry 3 J. Am. Chem. SOC.1994,116,2149-2150 Amide-Amide and Amide-Water Hydrogen Bonds Summary: of hydrogen bonds observed here therefore suggests that...

374

Facile Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene-Containing Tungsten Dimer CpW(CO)2(IMe)2. Facile Thermal W-W Bond Homolysis in the N-Heterocyclic Carbene-Containing...

375

Molecular Dynamics of Neutral Polymer Bonding Agent (NPBA) as Revealed by Solid-State NMR Spectroscopy  

E-Print Network [OSTI]

Neutral polymer bonding agent (NPBA) is one of the most promising polymeric materials, widely used in nitrate ester plasticized polyether (NEPE) propellant as bonding agent. The structure and dynamics of NPBA under different ...

Hu, Wei

376

Role of interatomic bonding in the mechanical anisotropy and interlayer cohesion of CSH crystals  

SciTech Connect (OSTI)

Atomic scale properties of calcium silicate hydrate (CSH), the main binding phase of hardened Portland cement, are not well understood. Over a century of intense research has identified almost 50 different crystalline CSH minerals which are mainly categorized by their Ca/Si ratio. The electronic structure and interatomic bonding in four major CSH crystalline phases with structures close to those found in hardened cement are investigated via ab initio methods. Our result reveals the critical role of hydrogen bonding and importance of specifying precise locations for water molecules. Quantitative analysis of contributions from different bond types to the overall cohesion shows that while the Si-O covalent bonds dominate, the hydrogen bonding and Ca-O bonding are also very significant. Calculated results reveal the correlation between bond topology and interlayer cohesion. The overall bond order density (BOD) is found to be a more critical measure than the Ca/Si ratio in classifying different CSH crystals.

Dharmawardhana, C.C. [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States); Misra, A. [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States)] [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States); Aryal, S.; Rulis, P. [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States); Ching, W.Y., E-mail: ccdxz8@mail.umkc.edu [Department of Physics and Astronomy, University of Missouri—Kansas City, Kansas City, MO 64110 (United States)

2013-10-15T23:59:59.000Z

377

Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

378

Bond Strength Degradation for CFRP and Steel reinforcing Bars in Concrete at Elevated Temperature   

E-Print Network [OSTI]

tendon as compared with steel prestressing wire. The results of transient elevated temperature bond pullout and tensile strength tests on CFRP tendons and steel prestressing wire are presented and discussed, and show that bond failure at elevated...

Maluk, Cristian; Bisby, Luke; Terrasi, Giovanni; Green, Mark

2011-03-01T23:59:59.000Z

379

2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded Oxygen Vacancy Blocking. 2-Propanol Dehydration on TiO2(110): The Effect of Bridge-Bonded Oxygen Vacancy Blocking....

380

E-Print Network 3.0 - aryl-metal bond chemistry Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

metal bond chemistry Search Powered by Explorit Topic List Advanced Search Sample search results for: aryl-metal bond chemistry Page: << < 1 2 3 4 5 > >> 1 Subscriber access...

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Cu-Cu direct bonding achieved by surface method at room temperature  

SciTech Connect (OSTI)

The metal bonding is a key technology in the processes for the microelectromechanical systems (MEMS) devices and the semiconductor devices to improve functionality and higher density integration. Strong adhesion between surfaces at the atomic level is crucial; however, it is difficult to achieve close bonding in such a system. Cu films were deposited on Si substrates by vacuum deposition, and then, two Cu films were bonded directly by means of surface activated bonding (SAB) at room temperature. The two Cu films, with the surface roughness Ra about 1.3nm, were bonded by using SAB at room temperature, however, the bonding strength was very weak in this method. In order to improve the bonding strength between the Cu films, samples were annealed at low temperatures, between 323 and 473 K, in air. As the result, the Cu-Cu bonding strength was 10 times higher than that of the original samples without annealing.

Utsumi, Jun [Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515 (Japan); Ichiyanagi, Yuko, E-mail: yuko@ynu.ac.jp [Department of Physics, Graduate School of Engineering, Yokohama National University, Tokiwadai, Hodogaya, Yokohama 240-8501 (Japan)

2014-02-20T23:59:59.000Z

382

Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Abstract:...

383

MONOLITHIC FUEL FABRICATION PROCESS DEVELOPMENT AT THE IDAHO NATIONAL LABORATORY_  

SciTech Connect (OSTI)

Full-size/prototypic U10Mo monolithic fuel-foils and aluminum clad fuel plates are being developed at the Idaho National Laboratory’s (INL) Materials and Fuels Complex (MFC). These efforts are focused on realizing Low Enriched Uranium (LEU) high density monolithic fuel plates for use in High Performance Research and Test Reactors. The U10Mo fuel foils under development afford a fuel meat density of ~16 gU/cc and thus have the potential to facilitate LEU conversions without any significant reactor-performance penalty. An overview is provided of the ongoing monolithic UMo fuel development effort, including application of a zirconium barrier layer on fuel foils, fabrication scale-up efforts, and development of complex/graded fuel foils. Fuel plate clad bonding processes to be discussed include: Hot Isostatic Pressing (HIP) and Friction Bonding (FB).

G. A. Moore; F. J. Rice; N. E. Woolstenhulme; J-F. Jue; B. H. Park; S. E. Steffler; N. P. Hallinan; M. D. Chapple; M. C. Marshall; B. L. Mackowiak; C. R. Clark; B. H. Rabin

2009-11-01T23:59:59.000Z

384

Los Alamos National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

23, 2013-Nearly 400 Los Alamos National Laboratory employees on 47 teams received Pollution Prevention awards for protecting the environment and saving taxpayers more than 8...

385

National Day of Remembrance  

SciTech Connect (OSTI)

Ames Laboratory observed the National Day of Remembrance for weapons workers from the Cold War era with a ceremony held Oct. 27, 2009 at the Ames Public Library.

None

2010-01-01T23:59:59.000Z

386

National Energy Awareness Month  

Broader source: Energy.gov [DOE]

October is National Energy Awareness Month. It's also a chance to talk about our country’s energy security and its clean energy future.

387

Idaho National Laboratory Facilities  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

National Scientific User Facility Center for Advanced Energy Studies Light Water Reactor Sustainability Idaho Regional Optical Network LDRD Next Generation Nuclear Plant Docs...

388

Idaho National Laboratory Newsroom  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

list of common INL acronyms and abbreviations. Page Contact Information: Nicole Stricker (208) 526-5955 Email Contact Feature Story Counting the ways Idaho National...

389

2012 National Electricity Forum  

Broader source: Energy.gov (indexed) [DOE]

or direct us to appropriate source materials.) To the extent that you believe your region has conditional congestion of national significance, what are the factors or...

390

National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

the Earth's Surface. The second virtual classroom to the student was presented by Tommy Smith from Lawrence Livermore National Laboratory on various sources of energy, its use and...

391

National Nuclear Security Administration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Project Reviews, etc., except those specifically reserved for the Administrator for the National Nuclear Security Administration and the Deputy Secretary. cc: Mike Hickman. NA-Stl...

392

National Cybersecurity Awareness Month  

Broader source: Energy.gov (indexed) [DOE]

National Cybersecurity Awareness Month (NCSAM) October 2013 Every October, the Department of Energy joins the Department of Homeland Security (DHS) and others across the country...

393

National Laboratory Photovoltaics Research  

Broader source: Energy.gov [DOE]

DOE supports photovoltaic (PV) research and development and facilities at its national laboratories to accelerate progress toward achieving the SunShot Initiative's technological and economic...

394

Los Alamos National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

this tenth member of our National Centers for Systems Biology program," said James Anderson, who oversees systems biology awards at NIGMS. "The new center will apply...

395

Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)  

SciTech Connect (OSTI)

This presentation reviews the status of the performance and reliability of bonded interfaces for high-temperature packaging.

Devoto, D.

2014-06-01T23:59:59.000Z

396

national security campus | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational NuclearhasAdministration goSecuritycdns ||fors| National

397

National Postdoctoral Association | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy Loginof Energy National

398

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos in Space

399

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos in

400

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos inDARHT: A

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos inDARHT:

402

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos inDARHT:A

403

National Security Science | Los National Alamos Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of Energy LoginofNationalLos Alamos

404

Characterization of Fuel-Cladding Bond Strength Using Laser Shock  

SciTech Connect (OSTI)

This paper describes new laser-based capabilities for characterization of fuel-cladding bond strength in nuclear fuels, and presents preliminary results obtained from studies on as-fabricated monolithic fuel consisting of uranium-10 wt.% molybdenum alloys clad in 6061 aluminum by hot isostatic pressing. Two complementary experimental methods are employed, laser-shock testing and laser-ultrasonic imaging. Measurements are spatially localized, non-contacting and require minimum specimen preparation, and are therefore ideally suited for applications involving radioactive materials, including irradiated materials. The theoretical principles and experimental approaches employed in characterization of nuclear fuel plates are described. The ability to measure layer thicknesses, elastic properties of the constituents, and the location and nature of laser-shock induced debonds is demonstrated, and preliminary bond strength measurement results are discussed.

James A. Smith; David L. Cottle; Barry H. Rabin

2014-04-01T23:59:59.000Z

405

Bonding topologies in diamondlike amorphous-carbon films  

SciTech Connect (OSTI)

The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces and their thicknesses increase with increasing deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies < 60 eV and increases for films grown using ion energies > 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of 4-fold to 3-fold coordinated carbon atoms.

SIEGAL,MICHAEL P.; PROVENCIO,PAULA P.; TALLANT,DAVID R.; SIMPSON,REGINA L.; KLEINSORGE,B.; MILNE,W.I.

2000-01-27T23:59:59.000Z

406

Cold bond agglomeration of waste oxides for recycling  

SciTech Connect (OSTI)

Recycling of waste oxides has been an on-going challenge for integrated steel plants. The majority of these waste oxides are collected from the cleaning systems of ironmaking and steelmaking processes, and are usually in the form of fine particulates and slurries. In most cases, these waste materials are contaminated by oils and heavy metals and often require treatment at a considerable expense prior to landfill disposal. This contamination also limits the re-use or recycling potential of these oxides as secondary resources of reliable quality. However, recycling of some selected wastes in blast furnaces or steelmaking vessels is possible, but first requires agglomeration of the fine particulate by such methods as cold bond briquetting. Cold bond briquetting technology provides both mechanical compacting and bonding (with appropriate binders) of the particulates. This method of recycling has the potential to be economically viable and environmentally sustainable. The nature of the present study is cold bond briquetting of iron ore pellet fines with a molasses-cement-H{sub 2}O binder for recycling in a blast furnace. The inclusion of molasses is for its contribution to the green strength of briquettes. During the curing stage, significant gains in strength may be credited to molasses in the presence of cement. The interactions of cement (and its substitutes), water and molasses and their effects on the properties of the agglomerates during and after various curing conditions were investigated. Tensile strengths of briquettes made in the laboratory and subjected to experimental conditions which simulated the top part of a blast furnace shaft were also examined.

D`Alessio, G.; Lu, W.K. [McMaster Univ., Hamilton, Ontario (Canada). Dept. of Materials Science and Engineering

1996-12-31T23:59:59.000Z

407

Oxford Area Community School District (Michigan) Bonds Case Study  

Broader source: Energy.gov [DOE]

Michigan’s Oxford Area Community School District entered into an energy savings performance contract and issued limited tax general obligation bonds to fund the up-front costs of almost $3 million of energy-related improvements. Case study is excerpted from Financing Energy Upgrades for K-12 School Districts: A Guide to Tapping into Funding for Energy Efficiency and Renewable Energy Improvements. Author: Merrian Borgeson and Mark Zimring

408

Flip chip electrical interconnection by selective electroplating and bonding  

E-Print Network [OSTI]

on a glass substrate made of 500/2000 A° of Cr/Au with 3150 lm in length and 10 lm in width. Two silicon. The interconnection chip has 102 Cr/Au interconnection lines with 3150 lm in length and 10 lm in width. The bonding pads on the ends of the interconnection lines are 40 lm by 40 lm. A 0.8 lm thick layer of aluminum

Lin, Liwei

409

Algorithm for anisotropic diffusion in hydrogen-bonded networks  

E-Print Network [OSTI]

In this paper I describe a specialized algorithm for anisotropic diffusion determined by a field of transition rates. The algorithm can be used to describe some interesting forms of diffusion that occur in the study of proton motion in a network of hydrogen bonds. The algorithm produces data that require a nonstandard method of spectral analysis which is also developed here. Finally, I apply the algorithm to a simple specific example.

Edoardo Milotti

2007-04-04T23:59:59.000Z

410

Quantum Confinement in Hydrogen Bond of DNA and RNA  

E-Print Network [OSTI]

The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.

da Silva dos Santos; Elso Drigo Filho; Regina Maria Ricotta

2015-02-09T23:59:59.000Z

411

Understanding mechanisms for C-H bond activation  

E-Print Network [OSTI]

is unclear as electrophilic and oxidative addition / reductive elimination (OA/RE) pathways have been proposed, and the research into this problem and other related aspects of this chemistry have been extensively considered in several books 18 and reviews... been proposed that lie between the two classic mechanisms that were discussed above; Lin has recently reviewed the current work in this field. 41 Webster and coworkers proposed metal-assisted ?-bond metathesis (MA?BM), 42 Lin and coworkers...

Vastine, Benjamin Alan

2009-05-15T23:59:59.000Z

412

Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix  

DOE Patents [OSTI]

A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al/sub 2/O/sub 3/ yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

Taylor, G.W.; Roybal, H.E.

1983-11-14T23:59:59.000Z

413

Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix  

DOE Patents [OSTI]

A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al.sub.2 O.sub.3 yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

Taylor, Gene W. (Los Alamos, NM); Roybal, Herman E. (Santa Fe, NM)

1985-01-01T23:59:59.000Z

414

Quantum Confinement in Hydrogen Bond of DNA and RNA  

E-Print Network [OSTI]

The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.

Santos, da Silva dos; Ricotta, Regina Maria

2015-01-01T23:59:59.000Z

415

Opening Pandora's Box - Sovereign Bonds in International Arbitration  

E-Print Network [OSTI]

OPENING PANDORA’S BOX: SOVEREIGN BONDS IN INTERNATIONAL ARBITRATION By Michael Waibel* In recent years, sovereign debt crises have received much attention from the perspective of international public policy, but an effective legal solution... . In 1995, Mexico was unable to meet its external debt obligations. Three years later, a severe financial crisis hit East Asia. Russia defaulted in 1998. Argentina’s 2001 default on more than U.S.$100 billion in private debt was the largest in history.7...

Waibel, Michael

416

Low Temperature Transient Liquid Phase Bonding of Ti6AI4V  

E-Print Network [OSTI]

bonds by intermetallic formation and subsequent diffusion annealing, but are limited to temperatures above 87s·c. Solid state activated diffusion bonding using sputtered copper intcrlayers will form joints temperature [1,2]. 1LP bonding of titanium has been used to produce aerospace components as descnoed by Norris

Eagar, Thomas W.

417

Ionwater hydrogen-bond switching observed with 2D IR vibrational echo chemical  

E-Print Network [OSTI]

Ion­water hydrogen-bond switching observed with 2D IR vibrational echo chemical exchange for review November 8, 2008) The exchange of water hydroxyl hydrogen bonds between anions and water oxygens of anion­ water hydroxyl hydrogen bond switching under thermal equilib- rium conditions as Taw 7 1 ps. Pump

Fayer, Michael D.

418

Extent of Hydrogen-Bond Protection in Folded Proteins: A Constraint on Packing Architectures  

E-Print Network [OSTI]

Extent of Hydrogen-Bond Protection in Folded Proteins: A Constraint on Packing Architectures Ariel structuring and ultimately exclusion of water by hydrophobes surrounding backbone hydrogen bonds turn hydrophobes yields an optimal hydrogen-bond stabilization. This motif is shown to be nearly ubiquitous

Berry, R. Stephen

419

Bonding in Sodium Chloride Nanotubes: A New Analysis via Madelung Constants and Cohesive Energies  

E-Print Network [OSTI]

1 Bonding in Sodium Chloride Nanotubes: A New Analysis via Madelung Constants and Cohesive Energies is introduced which employs a linear relationship between nanotube cohesive energies determined via Density between ionic and cohesive bonding energies indicate that, as the nanotubes become longer, ionic bonding

Hanusa, Christopher

420

AN INVESTIGATION OF THE BONDING AT THE CONCRETE POLYMER COMPOSITE INTERFACE  

E-Print Network [OSTI]

AN INVESTIGATION OF THE BONDING AT THE CONCRETE POLYMER COMPOSITE INTERFACE Wai How Soong, S, USA. ABSTRACT Bonding between the concrete and polymer composite (reinforcement) tendon was studied) and surface roughness of composite reinforcement tendons on the two types of bond strengths were investigated

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

TRANSIENT UQUID PHASE BONDING PROCESSES W. D. MacDonald and T.W. Eagar  

E-Print Network [OSTI]

. In this article, the term TLP \\viii apply to those bonding processes which rely on solid state diffusion to drive) ) ) .. ' TRANSIENT UQUID PHASE BONDING PROCESSES W. D. MacDonald and T.W. Eagar Department Transient liquid phase (TLP) bonding is an ancient process that has received increased attention in recent

Eagar, Thomas W.

422

Silver diffusion bonding and layer transfer of lithium niobate to silicon Kenneth Diest,a  

E-Print Network [OSTI]

Silver diffusion bonding and layer transfer of lithium niobate to silicon Kenneth Diest,a Melissa J July 2008; accepted 8 August 2008; published online 5 September 2008 A diffusion bonding method has, and upon heating, a diffusion bond was formed. Transmission electron microscopy confirms the interface

Atwater, Harry

423

Influence of silicon dangling bonds on germanium thermal diffusion within R. S. Cai,2  

E-Print Network [OSTI]

Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass D. Barba,1 R online 17 March 2014) We study the influence of silicon dangling bonds on germanium thermal diffusion of several orders of magnitudes.12,16­18 This may suggest that Si dangling bonds can affect the diffusion

424

Particle/substrate interaction in the cold-spray bonding process  

E-Print Network [OSTI]

, atomic inter-diffusion is not expected to play a significant role in particle/substrate bonding. This canC2 148 9 Particle/substrate interaction in the cold-spray bonding process M. GRUJICIC, Clemson in this chapter to the problem of particle/substrate interactions and bonding during cold spray. The actual

Grujicic, Mica

425

Electric charge trapping, residual stresses and properties of ceramics after metal/ceramics bonding  

E-Print Network [OSTI]

and diffusion of metallic species in the ceramics, during the bonding process. Keywords: Joining; ToughnessElectric charge trapping, residual stresses and properties of ceramics after metal/ceramics bonding applications is rapidly increasing. Most of these applications require the use of ceramics bonded with metal

Paris-Sud XI, Université de

426

Low Temperature Transient Liquid Phase (LTTLP) Bonding for Au/Cu  

E-Print Network [OSTI]

of Technology, Cambridge, MA 02139 TheLow Temperature TransientLiquidPhase Diffusion Bonding (LTTLP) process has) ) M. M. Hou Low Temperature Transient Liquid Phase (LTTLP) Bonding for Au/Cu and Cu been bonded to copper heatsink.s at temperatures less than 160"C, using /n-Sn eutectic solders. After

Eagar, Thomas W.

427

Simultaneous Bayesian reconstruction of diffusivity and bond potentials using path integrals  

E-Print Network [OSTI]

Simultaneous Bayesian reconstruction of diffusivity and bond potentials using path integrals Joshua requires fewer data and allows simultaneous inference of both complex bond potentials and diffusivity spectroscopy (DFS) has been used to distort bonds. The resulting responses, in the form of rupture forces, work

Levine, Alex J.

428

The time reversed elastic nonlinearity diagnostic applied to evaluation of diffusion bonds  

E-Print Network [OSTI]

The time reversed elastic nonlinearity diagnostic applied to evaluation of diffusion bonds T. J based nondestructive evaluation techniques has begun. Here, diffusion bonded metal disks containing and impulse responses to perform TR experiments in thin h 5 mm, d 5 cm diffusion bonded disks, in order

429

Molecular surface electrostatic potentials in the analysis of non-hydrogen-bonding noncovalent interactions  

SciTech Connect (OSTI)

Electrostatic potentials computed on molecular surfaces are used to analyze some noncovalent interactions that are not in the category of hydrogen bonding, e.g. halogen bonding. The systems examined include halogenated methanes, substituted benzenes, s-tetrazine and 1,3-bisphenylurea. The data were obtained by ab initio SCF calculations. Electrostatic potentials, Non-hydrogen-bonding noncovalent interactions, Molecular surfaces.

Murray, J.S.; Paulsen, K.; Politzer, P.

1993-12-27T23:59:59.000Z

430

Ligand Binding to the Pregnane X Receptor by Geometric Matching of Hydrogen Bonds  

E-Print Network [OSTI]

space. Hydrogen bonds have been used in FlexX [3] as part of a more complete energy function. Our conformations to PXR based on hydrogen bond geometry and use them as a starting point for ranking ligands aspect of the energy function, the hydrogen bonds, in order to identify the discriminating factor

North Carolina at Chapel Hill, University of

431

Hydrogen bond dynamics in the active site of photoactive yellow protein  

E-Print Network [OSTI]

Hydrogen bond dynamics in the active site of photoactive yellow protein Paul A. Sigala, Mark A for review February 5, 2009) Hydrogen bonds play major roles in biological structure and function. Nonetheless, hydrogen-bonded protons are not typically observed by X-ray crystallography, and most structural

Herschlag, Dan

432

The Hydrogen Bonding of Cytosinewith Guanine:Calorimetric and`H-NMR Analysis  

E-Print Network [OSTI]

The Hydrogen Bonding of Cytosinewith Guanine:Calorimetric and`H-NMR Analysis of the Molecular of hydrogen-bondformation between guanine (G) and cytusine (C) in o-dichloro- benzene and in chloroformat 25°C forming hydrogen bonds. Consequently, hydrogen-bond formation in our system is primarily between the bases

Williams, Loren

433

Hydrogen bond dynamics in membrane protein function Ana-Nicoleta Bondar a,  

E-Print Network [OSTI]

Review Hydrogen bond dynamics in membrane protein function Ana-Nicoleta Bondar a, , Stephen H 30 November 2011 Available online 8 December 2011 Keywords: Membrane protein structure Hydrogen bond Membrane protein dynamics Lipid­protein interactions Changes in inter-helical hydrogen bonding

White, Stephen

434

Hydrogen Bond Dissociation and Reformation in Methanol Oligomers Following Hydroxyl Stretch Relaxation  

E-Print Network [OSTI]

Hydrogen Bond Dissociation and Reformation in Methanol Oligomers Following Hydroxyl Stretch, 2002 Vibrational relaxation and hydrogen bond dynamics in methanol-d dissolved in CCl4 have been-d molecules both accepting and donating hydrogen bonds at 2500 cm-1 . Following vibrational relaxation

Fayer, Michael D.

435

Hydrogen bond breaking probed with multidimensional stimulated vibrational echo correlation spectroscopy  

E-Print Network [OSTI]

Hydrogen bond breaking probed with multidimensional stimulated vibrational echo correlation September 2003 Hydrogen bond population dynamics are extricated with exceptional detail using ultrafast ( 50 of methanol­OD oligomers in CCl4 . Hydrogen bond breaking makes it possible to acquire data for times much

Fayer, Michael D.

436

Native Hydrogen Bonds in a Molten Globule: The Apoflavodoxin Thermal Intermediate  

E-Print Network [OSTI]

Native Hydrogen Bonds in a Molten Globule: The Apoflavodoxin Thermal Intermediate Marõ�a P. Iru�n1 in surface- exposed hydrogen bonds connecting secondary-structure elements in the native protein. All hydrogen bonds analysed are formed in the molten globule intermediate, either with native strength

Sancho, Javier

437

Vacuum fusion bonded glass plates having microstructures thereon  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2001-01-01T23:59:59.000Z

438

Effect of hydrogen bond cooperativity on the behavior of water  

E-Print Network [OSTI]

Four scenarios have been proposed for the low--temperature phase behavior of liquid water, each predicting different thermodynamics. The physical mechanism which leads to each is debated. Moreover, it is still unclear which of the scenarios best describes water, as there is no definitive experimental test. Here we address both open issues within the framework of a microscopic cell model by performing a study combining mean field calculations and Monte Carlo simulations. We show that a common physical mechanism underlies each of the four scenarios, and that two key physical quantities determine which of the four scenarios describes water: (i) the strength of the directional component of the hydrogen bond and (ii) the strength of the cooperative component of the hydrogen bond. The four scenarios may be mapped in the space of these two quantities. We argue that our conclusions are model-independent. Using estimates from experimental data for H bond properties the model predicts that the low-temperature phase diagram of water exhibits a liquid--liquid critical point at positive pressure.

Kevin Stokely; Marco G. Mazza; H. Eugene Stanley; Giancarlo Franzese

2009-08-27T23:59:59.000Z

439

Structural behavior of silicone bonded glass block panels  

SciTech Connect (OSTI)

Silicone sealant was submitted for mortar in bonding glass blocks. The sealant`s tensile and shear strengths and stiffnesses were determined. Joints bonding two glass blocks were tested for stiffness and strength in tension, bending, out-of-plane shear, and in-plane shear. Bending tests were done on specimens one block wide and four blocks long to evaluate one-way bending behavior. A six block by six block panel, supported on all four sides, was built and tested under simulated wind load. An analytical model with material nonlinearity in the joints was developed for the one-way bending case. It gave good comparisons with the experimental data to load levels approaching failure. A more complex analytical model was developed for the two-way panel. It was only valid for lower load levels, in the range of potential allowable design loads, but compared well with test results. Silicone bonded glass block panels have potential for meeting the wind load requirements necessary for exterior use.

Chang, K.F. [Structural Engineering Associates, Inc., San Antonio, TX (United States); Sandberg, L.B. [Michigan Technological Univ. Houghton, MI (United States)

1996-12-31T23:59:59.000Z

440

National Park Service- Yellowstone National Park, Wyoming  

Broader source: Energy.gov [DOE]

Yellowstone National Park, Wyoming, has many historical sites within its boundaries. One of these is the Lamar Buffalo Ranch, a ranch that was set up in the early 1900s to breed buffalo for replacement stock within the park during a time when their numbers were very low. The ranch buildings are currently being used by the Yellowstone Association Institute for ecology classes.

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids with small bond angles: Effects of steric hindrance and ring formation  

SciTech Connect (OSTI)

In this paper we develop a thermodynamic perturbation theory for two site associating fluids which exhibit bond cooperativity (system energy is non-pairwise additive). We include both steric hindrance and ring formation such that the equation of state is bond angle dependent. Here, the bond angle is the angle separating the centers of the two association sites. As a test, new Monte Carlo simulations are performed, and the theory is found to accurately predict the internal energy as well as the distribution of associated clusters as a function of bond angle.

Marshall, Bennett D., E-mail: bennettd1980@gmail.com; Haghmoradi, Amin; Chapman, Walter G. [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)] [Department of Chemical and Biomolecular Engineering, Rice University, 6100 S. Main, Houston, Texas 77005 (United States)

2014-04-28T23:59:59.000Z

442

National Research Council Canada  

E-Print Network [OSTI]

National Research Council Canada Institute for Information Technology Conseil national de recherches Canada Institut de technologie de l'information Determining Internet Users' Values for Private in The Second Annual Conference on Privacy, Security and Trust (PST'04). Fredericton, New Brunswick, Canada

Fleming, Michael W.

443

INDIAN NATIONAL SCIENCE ACADEMY  

E-Print Network [OSTI]

INDIAN NATIONAL SCIENCE ACADEMY Science academies play a crucial role in promoting, recognizing and bring out proceedings and monographs. The academies promote public awareness and understanding the country. In this section the growth of the Indian National Science Academy and its functions

Srinivasan, N.

444

National Energy Software Center  

SciTech Connect (OSTI)

A short introduction is given to the services of the National Energy Software Library at the Argonne National Laboratory. The objectives, history, and software collection of the center are presented. Information on ordering from the software collection of the library is also included. 4 refs., 3 tabs. (DWL)

Eyberger, L.R.

1986-01-01T23:59:59.000Z

445

National Osteoporosis Prevention Month  

E-Print Network [OSTI]

MAY National Osteoporosis Prevention Month JUNE National Dairy Month Texas AgriLife Extension - Bone Health Power Point # P4-1 Eat Smart for Bone Health # P4-2 Osteoporosis Disease Statistics # P4-3 Osteoporosis = Porous Bones # P4-4 Risk Factors # P4-5 Risk Factors (continued) # P4-6 Steps to Prevention # P4

446

The National Cancer Institute,  

E-Print Network [OSTI]

The National Cancer Institute, International Cancer Information Center Bldg. 82, Rm 123 Bethesda, MD 20892 The National Cancer Institute (NCI) is part of the Federal Government. NCI coordinates the government's cancer research program. It is the largest of the 17 biomedical research institutes and centers

447

The Breathing Orbital Valence Bond Method in Diffusion Monte Carlo: C-H Bond Dissociation ofAcetylene  

SciTech Connect (OSTI)

This study explores the use of breathing orbital valence bond (BOVB) trial wave functions for diffusion Monte Carlo (DMC). The approach is applied to the computation of the carbon-hydrogen (C-H) bond dissociation energy (BDE) of acetylene. DMC with BOVB trial wave functions yields a C-H BDE of 132.4 {+-} 0.9 kcal/mol, which is in excellent accord with the recommended experimental value of 132.8 {+-} 0.7 kcal/mol. These values are to be compared with DMC results obtained with single determinant trial wave functions, using Hartree-Fock orbitals (137.5 {+-} 0.5 kcal/mol) and local spin density (LDA) Kohn-Sham orbitals (135.6 {+-} 0.5 kcal/mol).

Domin, D.; Braida, Benoit; Lester Jr., William A.

2008-05-30T23:59:59.000Z

448

National Institutes of Health National Institute of Mental Health  

E-Print Network [OSTI]

National Institutes of Health National Institute of Mental Health Department of Health and HumanNational Institute of Mental Health Division of Intramural Research Programs http://intramural.nimh.nih.gov/ [NIMH of Fellowship Training] National Institutes of Health National Institute of Mental Health Department of Health

Baker, Chris I.

449

National Security Photo Gallery | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recoveryLaboratory | NationalJohn Cyber Security Nuclear Forensics

450

Sandia National Laboratories: National Solar Thermal Test Facility...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FacilityNational Solar Thermal Test Facility Interest Survey National Solar Thermal Test Facility Interest Survey Company Name * Contact Name * Email * Phone Number * Nature of...

451

Sandia National Laboratories: Officials Turn to Sandia National...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ClimateECResearch & CapabilitiesCapabilitiesOfficials Turn to Sandia National Labs for Help on Huge Sinkhole Officials Turn to Sandia National Labs for Help on Huge Sinkhole...

452

Bond strength of cementitious borehole plugs in welded tuff  

SciTech Connect (OSTI)

Axial loads on plugs or seals in an underground repository due to gas, water pressures and temperature changes induced subsequent to waste and plug emplacement lead to shear stresses at the plug/rock contact. Therefore, the bond between the plug and rock is a critical element for the design and effectiveness of plugs in boreholes, shafts or tunnels. This study includes a systematic investigation of the bond strength of cementitious borehole plugs in welded tuff. Analytical and numerical analysis of borehole plug-rock stress transfer mechanics is performed. The interface strength and deformation are studied as a function of Young`s modulus ratio of plug and rock, plug length and rock cylinder outside-to-inside radius ratio. The tensile stresses in and near an axially loaded plug are analyzed. The frictional interface strength of an axially loaded borehole plug, the effect of axial stress and lateral external stress, and thermal effects are also analyzed. Implications for plug design are discussed. The main conclusion is a strong recommendation to design friction plugs in shafts, drifts, tunnels or boreholes with a minimum length to diameter ratio of four. Such a geometrical design will reduce tensile stresses in the plug and in the host rock to a level which should minimize the risk of long-term deterioration caused by excessive tensile stresses. Push-out tests have been used to determine the bond strength by applying an axial load to cement plugs emplaced in boreholes in welded tuff cylinders. A total of 130 push-out tests have been performed as a function of borehole size, plug length, temperature, and degree of saturation of the host tuff. The use of four different borehole radii enables evaluation of size effects. 119 refs., 42 figs., 20 tabs.

Akgun, H.; Daemen, J.J.K. [Arizona Univ., Tucson, AZ (USA). Dept. of Mining and Geological Engineering

1991-02-01T23:59:59.000Z

453

Biomass Feedstock National User Facility  

Broader source: Energy.gov [DOE]

Breakout Session 1B—Integration of Supply Chains I: Breaking Down Barriers Biomass Feedstock National User Facility Kevin L. Kenney, Director, Biomass Feedstock National User Facility, Idaho National Laboratory

454

Fuel cell system with separating structure bonded to electrolyte  

DOE Patents [OSTI]

A fuel cell assembly comprises a separating structure configured for separating a first reactant and a second reactant wherein the separating structure has an opening therein. The fuel cell assembly further comprises a fuel cell comprising a first electrode, a second electrode, and an electrolyte interposed between the first and second electrodes, and a passage configured to introduce the second reactant to the second electrode. The electrolyte is bonded to the separating structure with the first electrode being situated within the opening, and the second electrode being situated within the passage.

Bourgeois, Richard Scott (Albany, NY); Gudlavalleti, Sauri (Albany, NY); Quek, Shu Ching (Clifton Park, NY); Hasz, Wayne Charles (Pownal, VT); Powers, James Daniel (Santa Monica, CA)

2010-09-28T23:59:59.000Z

455

Overlap population density as an index of bond strength  

E-Print Network [OSTI]

be eliminated. This is done by carrying out an orthogonal transformdtion on b, witn a known matrix U, viz. D = UAU' (10) Next~ M is constructed vis, the equation: M=V'D 'U (11) M transforms b to the unit matrix X: (12) Since: I ~1 MdM = U 'D PhU 'D U... on molecules of the same chemical i'amily as those under study, viz, R2-NN02, D. Thermal Decomposition of Nitramides Although estimates of the energies of bonds other than N-N, B?G. Gowcnlock, P. Jones and J. R. Majer~ Trans. Faraday Soc. ~7 23 (1981) RE...

Gallagher, Michael James

2012-06-07T23:59:59.000Z

456

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManusScienceThe43068G.Time-Resolved Study of Bonding in

457

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManusScienceThe43068G.Time-Resolved Study of Bonding

458

Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy1.pdfMarket37963 Vol.Department of EnergyMarchU.S.Bonds (New

459

Qualified Energy Conservation Bond State-by-State Summary Tables |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment of EnergyQualified Energy Conservation Bond

460

Qualified Energy Conservation Bond Webinars | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment of EnergyQualified Energy Conservation BondWebinars

Note: This page contains sample records for the topic "wafer bonding national" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Chemical bond and entanglement of electrons in the hydrogen molecule  

E-Print Network [OSTI]

We theoretically investigate the quantum correlations (in terms of concurrence of indistinguishable electrons) in a prototype molecular system (hydrogen molecule). With the assistance of the standard approximations of the linear combination of atomic orbitals and the con?guration interaction methods we describe the electronic wavefunction of the ground state of the H2 molecule. Moreover, we managed to ?find a rather simple analytic expression for the concurrence (the most used measure of quantum entanglement) of the two electrons when the molecule is in its lowest energy. We have found that concurrence does not really show any relation to the construction of the chemical bond.

Nikos Iliopoulos; Andreas F. Terzis

2014-08-01T23:59:59.000Z

462

The National Environmental  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe Molecular Bond:Environmental Serving an

463

The National Renewable  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe Molecular Bond:Environmental ServingRenewable

464

National Synchrotron Light Source  

ScienceCinema (OSTI)

A tour of Brookhaven's National Synchrotron Light Source (NSLS). The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviole

None

2010-01-08T23:59:59.000Z

465

Perspectives on the National  

E-Print Network [OSTI]

Perspectives on the National Electrical Code ® John Wiles Sponsored by the Photovoltaic Systems systems. Representatives from the photovoltaic (PV) industry, academic institutions, the inspector requirements does not guarantee high levels of performance, higher performance and reliability frequently

Johnson, Eric E.

466

AISES National Conference  

Office of Energy Efficiency and Renewable Energy (EERE)

The AISES National Conference is a one-of-a-kind, three day event convening graduate, undergraduate, and high school junior and senior students, teachers, workforce professionals, corporate and...

467

Alamos National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Economic development in Northern New Mexico focus of new podcast from Los Alamos National Laboratory November 25, 2013 Podcast part of Lab's new multi-channel effort to better...

468

National Center Standardsfor  

E-Print Network [OSTI]

American Free Trade Agreement (NAFTA) International Organization for Standardization Information Network and exports Standards organizations, experts, and publications NCSCI helps you with these tools . . . Full texts of standards Indexes to millions of industry, national, regional, and international standards U

469

National Environmental Information Infrastructure  

E-Print Network [OSTI]

National Environmental Information Infrastructure: Reference Architecture Contributing Information Infrastructure: Reference Architecture v1.1 Environmental Information Programme Publication Series: Reference Architecture, Environmental Information Programme Publication Series, document no. 4, Bureau

Greenslade, Diana

470

Argonne National Laboratory  

Broader source: Energy.gov [DOE]

HISTORYThe Argonne National Laboratory (ANL) site is approximately 27 miles southwest of downtown Chicago in DuPage County, Illinois.  The 1,500 acre ANL site is completely surrounded by the 2,240...

471

Los Alamos National Laboratory's  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

takes part in Blue Star Museums program May 16, 2012 Free admission for active duty military, their family members LOS ALAMOS, New Mexico, May 16, 2012-Los Alamos National...

472

Brookhaven National Laboratory  

Broader source: Energy.gov [DOE]

Site OverviewThe Brookhaven National Laboratory (BNL) was established in 1947 by the Atomic Energy Commission (AEC) (predecessor to U.S. Department of Energy [DOE]). Formerly Camp Upton, a U.S....

473

Oversight Reports - Argonne National Laboratory | Department...  

Broader source: Energy.gov (indexed) [DOE]

Argonne National Laboratory Oversight Reports - Argonne National Laboratory August 24, 2012 Independent Activity Report, Argonne National Laboratory - July 2012 Operational...

474

National Electric Transmission Congestion Study Webinars | Department...  

Broader source: Energy.gov (indexed) [DOE]

National Electric Transmission Congestion Study National Electric Transmission Congestion Study Webinars National Electric Transmission Congestion Study Webinars The Department...

475

UNIVERSITY OF CANADA FIRST NATIONS  

E-Print Network [OSTI]

UNIVERSITY DRIVE NORTH UNIVERSITYDRIVEEAST LIFT STATION BASEBALL DIAMOND FIRST NATIONS WAY FIRST NATIONS WAY G UNIVERSITYDRIVEWEST ENGINEERING GARAGE ARTIFICIAL TURF FIELD EASTLOOPROAD PLAYING FIELD 1

Argerami, Martin

476

with Oak Ridge National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Mechanisms for Partnering with Oak Ridge National Laboratory Partnerships-It's our name, but it also represents our driving philosophy and commitment. Oak Ridge National...

477

Climate Change and National Security  

E-Print Network [OSTI]

CLIMATE CHANGE Multiplying Threats to National Securityfor the impacts of climate change on national security. Pagea warming world. Page 11 “Climate change acts as a threat

Alyson, Fleming; Summer, Kelly; Summer, Martin; Lauren, Franck; Jonathan, Mark

2015-01-01T23:59:59.000Z

478

Nitrogen-tuned bonding mechanism of Li and Ti adatom embedded graphene  

SciTech Connect (OSTI)

The effects of nitrogen defects on the bonding mechanism and resultant binding energy between the metal and graphene layer were investigated using density functional theory (DFT) calculations. For the graphitic N-doped graphene, Li adatom exhibited ionic bonding character, while Ti adatom showed features of covalent bonding similar to that of pristine graphene. However, in the cases of pyridinic and pyrrolic structures, partially covalent bonding characteristic occurred around N atoms in the process of binding with metals, and this particular bond formation enhanced the bond strength of metal on the graphene layer as much as it exceeded the cohesive energy of the metal bulk. Thus, Li and Ti metals are expected to be dispersed with atomic accuracy on the pyridinic and pyrrolic N-doped graphene layers. These results demonstrate that the bonding mechanism of metal–graphene complex can change according to the type of N defect, and this also affects the binding results. - Graphical abstract: Display Omitted - Highlights: • Nitrogen defects changed the bonding mechanism between metal and graphene. • Bonding character and binding results were investigated using DFT calculations. • Covalent bonding character occurred around pyridinic and pyrrolic N-doped graphene. • Pyridinic and pyrrolic N atoms are effective for metal dispersion on the graphene.

Lee, Sangho; Chung, Yong-Chae, E-mail: yongchae@hanyang.ac.kr

2013-09-15T23:59:59.000Z

479

A theory for calculating the surface-adsorbate bond dissociation energy from collision-induced desorption threshold measurements  

E-Print Network [OSTI]

to determine surface-adsorbate bond energies.3 Here we present a new model for determin- ing the bondA theory for calculating the surface-adsorbate bond dissociation energy from collision is presented for determining the bond dissociation energy, Do, of a surface-adsorbate complex from collision

Levis, Robert J.

480

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 21, NO. 2, APRIL 2012 497 Rapid Silicon-to-Steel Bonding by Induction  

E-Print Network [OSTI]

, thermocompressive diffusion bonding has been demonstrated for the bonding of sil- icon nitride to steel [1], [2-to-Steel Bonding by Induction Heating for MEMS Strain Sensors Brian D. Sosnowchik, Robert G. Azevedo, Member, IEEE and manufacturable technique to bond sil- icon to steel for microelectromechanical system (MEMS) sensor applications

Lin, Liwei

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481

Analysis and testing of adhesively bonded lap joints  

SciTech Connect (OSTI)

Detailed studies of adhesively bonded tubular lap joints subjected to axial loads can be efficiently performed with two-dimensional (2D) finite element analyses. However, three-dimensional (3D) analyses are required to model the bending of tubes and the axial loading of many other shapes such as airfoils. Unfortunately, these 3D analyses require significantly more time and computer resources than 2D analyses. Thus, it is of interest to determine whether some aspects of 3D behavior can be captured with 2D analyses. A series of finite element analyses will show that the shear stress in the adhesive of a tubular or an elliptic lap joint -- due to a bending load -- can be reasonably estimated with a 2D analysis even though the behavior is 3D. After the agreement between 2D and 3D analyses is detailed, preliminary efforts to assess the importance of adhesive geometry at the end of the bond will be discussed. Experimental measurements of the mechanical properties of a structural adhesive used in joint tests will also be presented. Tension, compression, and stress relaxation data for a filled, amine-cured epoxy adhesive will be discussed.

Metzinger, K.E.; Guess, T.R.

1995-10-01T23:59:59.000Z

482

IMPACT OF CAPILLARY AND BOND NUMBERS ON RELATIVE PERMEABILITY  

SciTech Connect (OSTI)

Recovery and recovery rate of oil, gas and condensates depend crucially on their relative permeability. Relative permeability in turn depends on the pore structure, wettability and flooding conditions, which can be represented by a set of dimensionless groups including capillary and bond numbers. The effect of flooding conditions on drainage relative permeabilities is not well understood and is the overall goal of this project. This project has three specific objectives: to improve the centrifuge relative permeability method, to measure capillary and bond number effects experimentally, and to develop a pore network model for multiphase flows. A centrifuge has been built that can accommodate high pressure core holders and x-ray saturation monitoring. The centrifuge core holders can operate at a pore pressure of 6.9 MPa (1000 psi) and an overburden pressure of 17 MPa (2500 psi). The effect of capillary number on residual saturation and relative permeability in drainage flow has been measured. A pore network model has been developed to study the effect of capillary numbers and viscosity ratio on drainage relative permeability. Capillary and Reynolds number dependence of gas-condensate flow has been studied during well testing. A method has been developed to estimate relative permeability parameters from gas-condensate well test data.

Kishore K. Mohanty

2002-09-30T23:59:59.000Z

483

National Ignition Facility | National Nuclear Security Administration  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recoveryLaboratory | NationalJohn F.Demonstrate PromisingElectedEnergy33997000 |

484

Lawrence Livermore National Laboratory | National Nuclear Security  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6, 2011 Lawrence Livermore National Laboratory

485

National Nuclear Security Administration | National Nuclear Security  

National Nuclear Security Administration (NNSA)

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486

Previous Sandia National Laboratories | National Nuclear Security  

National Nuclear Security Administration (NNSA)

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487

Researcher, Sandia National Laboratories | National Nuclear Security  

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488

Sandia National Laboratories | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational Nuclearhas 'Natitude' |RequestsAdministration devote

489

Sandia National Laboratories | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational Nuclearhas 'Natitude' |RequestsAdministration devoteAllison Davis Sandia

490

Sandia National Laboratories | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational Nuclearhas 'Natitude' |RequestsAdministration devoteAllison Davis

491

Sandia National Laboratories | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartmentNational Nuclearhas 'Natitude' |RequestsAdministration devoteAllison DavisSandia

492

Sandia National Laboratories: Sandia National Laboratories: Missions:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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493

Sandia National Laboratories: FEMA National Exercise Division  

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494

Sandia National Laboratories: Los Alamos National Laboratory  

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495

Sandia National Laboratories: National Electrical Code  

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496

Sandia National Laboratories: National Renewable Energy Laboratory  

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497

Dynamics of Weak, Bifurcated and Strong Hydrogen Bonds in Lithium Nitrate Trihydrate  

SciTech Connect (OSTI)

The properties of three distinct types of hydrogen bonds, namely a weak, a bifurcated and a strong one, all present in/the LiNO3 (HDO)(D2O)2 hydrate lattice unit cell are studied using steady-state and time-resolved spectroscopy. The lifetimes of the OH stretching vibrations for the three individual bonds are 2.2 ps (weak), 1.7 ps (bifurcated), and 1.2 ps (strong), respectively. For the first time the properties of bifurcated H bonds can thus be unambiguously directly compared to those of weak and strong H bonds in the same system. The values of their OH stretching vibration lifetime, anharmonicity, red shift and bond strength lie between those for the strong and weak H bonds. The experimentally observed inhomogeneous broadening of their spectral signature is attributed to the coupling with a low frequency intermolecular wagging vibration/

Werhahn, Jasper C.; Pandelov, S.; Xantheas, Sotiris S.; Iglev, H.

2011-07-07T23:59:59.000Z

498

Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues  

SciTech Connect (OSTI)

Enzymes and their mimics use hydrogen bonds to catalyze chemical transformations. Small molecule transition state analogs of oxyanion holes are characterized by gas phase IR and photoelectron spectroscopy and their binding constants in acetonitrile. As a result, a new class of hydrogen bond catalysts is proposed (OH donors that can contribute three hydrogen bonds to a single functional group) and demonstrated in a Friedel-Crafts reaction.

Beletskiy, Evgeny V.; Schmidt, Jacob C.; Wang, Xue B.; Kass, Steven R.

2012-11-14T23:59:59.000Z

499

A CH O Hydrogen Bond Stabilized Polypeptide Chain Reversal Motif at the C Terminus of Helices  

E-Print Network [OSTI]

A C­H· · ·O Hydrogen Bond Stabilized Polypeptide Chain Reversal Motif at the C Terminus of Helices of Science Bangalore 560012, India The serendipitous observation of a C­H· · ·O hydrogen bond mediated­N hydrogen bond involving the side- chain of residue T 2 4 and the N­H group of residue T þ 3. In as many

Babu, M. Madan

500

Lawrence Berkeley National Laboratory Overview  

Office of Energy Efficiency and Renewable Energy (EERE)

Presentation about the history, structure, and projects of the Lawrence Berkeley National Laboratory.