Powered by Deep Web Technologies
Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Namibia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Namibia: Energy Resources Namibia: Energy Resources Jump to: navigation, search Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"TERRAIN","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"390px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":-22,"lon":17,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

2

The influence of the Benguela upwelling system on Namibia's marine biodiversity  

Science Journals Connector (OSTI)

Namibia's marine environment falls within the Benguela system, an ... This trend is evident in all the major marine habitats off Namibia, where diversity is often ... west coast of South Africa. Namibia's marine ...

A.L. Sakko

1998-01-01T23:59:59.000Z

3

Namibia-UNEP Green Economy Advisory Services | Open Energy Information  

Open Energy Info (EERE)

Namibia-UNEP Green Economy Advisory Services Namibia-UNEP Green Economy Advisory Services Jump to: navigation, search Logo: Namibia-UNEP Green Economy Advisory Services Name Namibia-UNEP Green Economy Advisory Services Agency/Company /Organization United Nations Environment Programme (UNEP) Partner German Agency for International Cooperation (GIZ), Global Green Growth Knowledge Platform (GGKP), Green Jobs Initiative, United Nations Development Programme (UNDP), United Nations Department of Economic and Social Affairs (UNDESA) Sector Climate, Energy, Land, Water Focus Area People and Policy Topics Co-benefits assessment, Low emission development planning, -LEDS Country Namibia Southern Africa References UNEP Green Economy Advisory Services[1] Overview "UNEP Green Economy Advisory Services consist of policy advice, technical

4

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

Seattle, WA Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Seattle WA Puget Sound Energy Inc.png SVFullServiceRestauran... 60 KB SVHospital Seattle WA Puget Sound Energy Inc.png SVHospital Seattle WA ... 58 KB SVLargeHotel Seattle WA Puget Sound Energy Inc.png SVLargeHotel Seattle W... 57 KB SVLargeOffice Seattle WA Puget Sound Energy Inc.png SVLargeOffice Seattle ... 57 KB SVMediumOffice Seattle WA Puget Sound Energy Inc.png SVMediumOffice Seattle... 61 KB SVMidriseApartment Seattle WA Puget Sound Energy Inc.png SVMidriseApartment Sea... 58 KB SVOutPatient Seattle WA Puget Sound Energy Inc.png SVOutPatient Seattle W... 63 KB

5

WA_1993_040_REGENTS_OF_THE_UNIVERSITY_OF_CALIFORNIA_Waiver_o...  

Broader source: Energy.gov (indexed) [DOE]

WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNI...

6

WA_00_030_ASE_AMERICAS_Request_to_Assign_Title_to_Waiver-Inv...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA03032RWESCHOTTSOLARINCWaiverof...

7

Category:Yakima, WA | Open Energy Information  

Open Energy Info (EERE)

Yakima, WA Yakima, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Yakima, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Yakima WA Puget Sound Energy Inc.png SVFullServiceRestauran... 61 KB SVHospital Yakima WA Puget Sound Energy Inc.png SVHospital Yakima WA P... 58 KB SVLargeHotel Yakima WA Puget Sound Energy Inc.png SVLargeHotel Yakima WA... 58 KB SVLargeOffice Yakima WA Puget Sound Energy Inc.png SVLargeOffice Yakima W... 58 KB SVMediumOffice Yakima WA Puget Sound Energy Inc.png SVMediumOffice Yakima ... 57 KB SVMidriseApartment Yakima WA Puget Sound Energy Inc.png SVMidriseApartment Yak... 59 KB SVOutPatient Yakima WA Puget Sound Energy Inc.png SVOutPatient Yakima WA... 63 KB SVPrimarySchool Yakima WA Puget Sound Energy Inc.png

8

Source rock, maturity data indicate potential off Namibia  

SciTech Connect (OSTI)

Namibia`s territorial waters occupy a large portion of West Africa`s continental shelf. The area to the 1,000 m isobath is comparable in size to the combined offshore areas of Gabon, Congo, Zaire, and Angola. Around half as much again lies in 1,000--2,500 m of water. The whole unlicensed part of this area will be open for bidding when the Third Licensing Round starts Oct. 1, 1998. Offshore Namibia is underexplored by drilling with only seven exploration wells drilled. Shell`s Kudu field represents a considerable gas resource with reserves of around 3 tcf and is presently the only commercial discovery.Namibia`s offshore area holds enormous exploration potential. Good quality sandstone reservoirs are likely to be distributed widely, and a number of prospective structural and stratigraphic traps have been identified. The recognition of Cretaceous marine oil-prone source rocks combined with the results of new thermal history reconstruction and maturity modeling studies are particularly significant in assessment of the oil potential. The paper discusses resource development and structures, oil source potential, maturity, and hydrocarbon generation.

Bray, R.; Lawrence, S. [Exploration Consultants Ltd., Henley-on-Thames (United Kingdom); Swart, R. [National Petroleum Corp. of Namibia Pty. Ltd., Windhoek (Namibia)

1998-08-10T23:59:59.000Z

9

MHK Projects/GPP Namibia | Open Energy Information  

Open Energy Info (EERE)

GPP Namibia GPP Namibia < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":-22.9576,"lon":18.4904,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

10

Namibia, practically unexplored, may have land, offshore potential  

SciTech Connect (OSTI)

Namibia became an independent nation in March 1990. Lying in southwestern Africa, it has an onshore area of 823,144 sq km with a coastline some 1,400 km long (Figs. 1,2). The offshore area, out to the 1,000 m isobath, is 340,000 sq km. This is equal to the combined offshore areas of Gabon, Congo, Zaire, and Angola. The hydrocarbon potential of this vast region is virtually unexplored because of political uncertainties that affected the country in the years until independence. Now, however, the country has a democratically elected government, political stability, and a positive and realistic attitude towards foreign investment. The authors describe the recently enacted petroleum legislation, taxation system, and hydrocarbon potential of Namibia. A licensing round (both offshore and onshore) has just been announced and will close Nov. 1, 1991. The new onshore and offshore blocks are shown. Through the activities of Namcor, the national petroleum corporation, and Intera ECL, Namibia is emerging as one of the few remaining countries of the world where truly giant fields could be found.

Light, M.P.R. (Intera ECL Petroleum Technologies, Henley-on-Thames (GB)); Shimutwikeni, N. (National Petroleum Corp. of Namibia, Windhoek, Namibia (ZA))

1991-04-08T23:59:59.000Z

11

Advance Patent Waiver W(A)2013-013 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA98023McDERMOTTTECHNOLOGYINCWaiverofDomesticandFo.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96004GECORPORATERESEARCHand...

12

WA_1995_018_OPTICAL_COATING_LABORATORY_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICAL...

13

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04028AIRPRODUCTSANDCHEMICAL...

14

WA_98_023_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Domestic_and_Fo...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00007COMBUSTIONENGINEERINGINCW...

15

WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...  

Broader source: Energy.gov (indexed) [DOE]

WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

16

WA_04_009_ROCKWELL_SCIENTIFIC_CO_Wailve_of_Domestic_And_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA00030ASEAMERICASRequesttoAssign...

17

WA_1995_019_DONNELLY_CORPORATION_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA00030ASEAMERICASRequesttoAssignTitletoWaiver-Inv.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA04009ROCKWELLSCIENTIFICCOWailve...

18

RAPID/Roadmap/11-WA-a | Open Energy Information  

Open Energy Info (EERE)

Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 11-WA-a State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf...

19

WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

20

WA_96_016_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domestic_...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

16AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

22

WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

23

WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

24

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

25

WA_1993_028_ALLIANCE_ELECTRIC_COMPANY_Waiver_of_Domestic_and...  

Broader source: Energy.gov (indexed) [DOE]

3028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomestic...

26

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

27

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

28

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Broader source: Energy.gov (indexed) [DOE]

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS Energy Efficiency and Conservation Block Grant Program Location: Tribe WA-TRIBE- STILLAGUAMISH TRIBE OF INDIANS WA American Recovery and Reinvestment Act: Proposed Action or Project Description The Stillaguamish Tribe proposes to expand its Stillaguamish Tribe Transit Services (STTS). For the past three years, the STTS has employed 14-passenger buses to transport clients to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time; therefore, funds are being requested to purchase a hybrid sedan to transport clients. Conditions: None Categorical Exclusion(s) Applied: A1, B1.32, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

29

WA_98_016_ABB_POWER_T_AND_D_COMPANY_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2011-046 Advance Patent Waiver W(A)2009-016 WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic...

30

Advance Patent Waiver W(A)2009-030 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

public. Advance Patent Waiver W(A)2009-030 More Documents & Publications WA97030AIRPRODUCTSWaiverofDomesticandForeignPaten.pdf WA98001REYNOLDSMETALSCOMPANYW...

31

WA_04_085_THE_BOEING_COMPANY_Waiver_of_domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2010-018 Advance Patent Waiver W(A)2007-012 WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand...

32

WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

33

WA_00_035_ALCOA_INC_Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA03054HEILTRAILERINTERNATIONALWaiverofDomesticand.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

34

WA_03_054_HEIL_TRAILER_INTERNATIONAL_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA00035ALCOAINCWaiverofDomesticandForeignRightsin.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

35

RAPID/Roadmap/4-WA-a | Open Energy Information  

Open Energy Info (EERE)

4-WA-a State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Permit Overview Developers desiring to conduct geothermal exploration activities on...

36

RAPID/Roadmap/3-WA-b | Open Energy Information  

Open Energy Info (EERE)

needs access to state lands for exploratory purposes, then they should begin the State Exploration Process. Green arrow.PNG 4-WA-a: State Exploration Process 3-WA-b.3 to...

37

RAPID/Roadmap/19-WA-f | Open Energy Information  

Open Energy Info (EERE)

9-WA-f Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Permit Overview A developer...

38

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI -  

Broader source: Energy.gov (indexed) [DOE]

WA Dept. of Commerce STATE: WA WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI - Demand Energy - Energy Storage System Tied to Solar on Commercial Facility TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000052 DE-EEOOO0139 GFO-o000139-031 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

39

Advance Patent Waiver W(A)2011-011 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2011-011 More Documents & Publications Advance Patent Waiver W(A)2008-011 Advance Patent Waiver W(A)2008-045 WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo...

40

Advance Patent Waiver W(A)2005-006 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Advance Patent Waiver W(A)2002-023 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

2-023 Advance Patent Waiver W(A)2002-023 Advance Patent Waiver W(A)2002-023 More Documents & Publications Advance Patent Waiver W(A)2006-028 WA05056IBMWATSONRESEARCHCENTERWa...

42

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

43

WA_07_038_POET_PROJECT_LIBERTY_LLC_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

7038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomestic...

44

WA_1993_041_ROCKETDYNE_AND_LLNL_Waiver_of_the_Governments_U.pdf...  

Broader source: Energy.gov (indexed) [DOE]

1ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pd...

45

WA_1993_042_UNITED_TECHNOLOGIES_CORPORATION_Waiver_of_the_Go...  

Broader source: Energy.gov (indexed) [DOE]

TIONWaiveroftheGo.pdf More Documents & Publications WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU...

46

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

COMPANYWaiverofDomesticandForeign.pdf More Documents & Publications WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA98008GENERALELECTRICCOMPANYWaive...

47

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

48

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Broader source: Energy.gov (indexed) [DOE]

15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

49

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

50

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

51

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Broader source: Energy.gov (indexed) [DOE]

1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

52

WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

53

WA_03_018_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomestica...

54

WA_02_028_TRANE_CO__Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

5YORKINTERNATIONALCORPORATIONWaiverofDomesti.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverofDomestica.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore...

55

WA_04_040_HONEYWELL_INTERNATIONAL_INC_Waiver_of_Patent_Right...  

Broader source: Energy.gov (indexed) [DOE]

40HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRi...

56

WA_03_041_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomestica...

57

WA_01_011_HONEYWELL_LABORATORIES_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

11HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandF...

58

WA_00_011_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

0011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomestica...

59

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

60

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

34NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFo...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

62

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

BayWa Group BayWa Group Jump to: navigation, search Name BayWa Group Place Munich, Germany Zip 81925 Sector Services, Solar Product Germany-based company with international operations specialised in wholesale and retail and in providing services. The company is also active in the biofuel and solar sectors. Coordinates 48.136415°, 11.577531° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.136415,"lon":11.577531,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

63

Knowing and deciding: participation in conservation and development initiatives in Namibia and Argentina  

E-Print Network [OSTI]

in Namibia and the Alto Bermejo Project in Argentina. The concept of sustainability of living in a way that meets both current and future needs has led, on a global scale, to a re-casting of the relationship between conservation and development as one...

Newsham, Andrew

2007-01-01T23:59:59.000Z

64

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

Sunways JV Jump to: navigation, search Name: BayWa & Sunways JV Place: Germany Sector: Solar Product: Germany-based JV that specialises in developing, planning and realizing...

65

RAPID/Roadmap/14-WA-b | Open Energy Information  

Open Energy Info (EERE)

RAPID Regulatory and Permitting Information Desktop Toolkit BETA RAPID Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 14-WA-b NPDES Permit...

66

RAPID/Roadmap/9-WA-a | Open Energy Information  

Open Energy Info (EERE)

(EIS) is necessary. Contact Information Agency Washington State Department of Ecology Position State Environmental Issues Contact Name Fran Sant Email fran.sant@ecy.wa.gov...

67

Fourth Annual SECA Meeting - Seattle, WA  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fourth Annual SECA Meeting - Seattle, WA Fourth Annual SECA Meeting - Seattle, WA April 15-16, 2003 Table of Contents Disclaimer Papers and Presentations Expanded Applications of SECA Fuel Cells SECA Industrial Team Reports Military Applications of Fuel Cells Technology Highlights Environmental Considerations Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government or any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

68

The regulation of water in Namibia in the context of property rights : a comparison with South African water legislation / John Matthew Thomas Pinto.  

E-Print Network [OSTI]

??The Water Resources Management Act 24 of 2004 will change the water regime in Namibia dramatically. Section 4 of the Water Resources Management Act provides (more)

Pinto, John Matthew Thomas

2014-01-01T23:59:59.000Z

69

waTer economics. environmenTand Policy  

E-Print Network [OSTI]

41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

Botea, Adi

70

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester  

Broader source: Energy.gov (indexed) [DOE]

of5 of5 RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-EE0000139 GF0-10-604 Based on my review oftbe information concerning the proposed action, as NEPA CompUance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: cx, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

71

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

National Nuclear Security Administration (NNSA)

Hanford, WA Selected as Plutonium Production Facility | National Nuclear Hanford, WA Selected as Plutonium Production Facility | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility January 16, 1943 Hanford, WA

72

Advance Patent Waiver W(A)2008-035 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

public. Advance Patent Waiver W(A)2008-035 More Documents & Publications WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf Advance Patent Waiver W(A)2008-022...

73

Advance Patent Waiver W(A)2010-042 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2010-042 More Documents & Publications Advance Patent Waiver W(A)2005-023 WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf ClassWaiverWC-2003-001.pdf...

74

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Broader source: Energy.gov (indexed) [DOE]

POWERWaiverofPatentRightsinPerformance.pdf More Documents & Publications WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99022AIRPRODUCTSANDCHEMICAL...

75

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Broader source: Energy.gov (indexed) [DOE]

2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

76

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

2FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO...

77

WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...  

Broader source: Energy.gov (indexed) [DOE]

18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

78

WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

IRTECHNOLOGIESWaiverofDomesticandFor.pdf More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02021H2GENINNOVATIONSWaiverof...

79

WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...  

Broader source: Energy.gov (indexed) [DOE]

24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

80

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Broader source: Energy.gov (indexed) [DOE]

1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Broader source: Energy.gov (indexed) [DOE]

2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

82

WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...  

Broader source: Energy.gov (indexed) [DOE]

01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

83

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Broader source: Energy.gov (indexed) [DOE]

04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

84

WA_02_022_HONEYWELL_INC_Waiver_of_Domestic_and_Foreign_Inven...  

Broader source: Energy.gov (indexed) [DOE]

22HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignIn...

85

WA_02_045_KENNAMETAL_INC_Waiver_of_Domestic_and_Foreign_Righ...  

Broader source: Energy.gov (indexed) [DOE]

LINCWaiverofDomesticandForeignRigh.pdf More Documents & Publications WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA01034INGERSOLL-RANDENERGYSYSTEMS...

86

WA_04_039_HONEYWELL_INTERNATIONAL_Waiver_of_Patent_Rights_Un...  

Broader source: Energy.gov (indexed) [DOE]

9HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRights...

87

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

88

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Broader source: Energy.gov (indexed) [DOE]

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

89

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

90

RAPID/Roadmap/18-WA-b | Open Energy Information  

Open Energy Info (EERE)

period in which the WSDE has to respond to the Demonstration of Compliance. 18-WA-b.17 - Conduct Public Meeting, if Requested If the public requests a public meeting on the...

91

STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE OF  

E-Print Network [OSTI]

STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE´S***, and DANIEL P. SCHRAG* ABSTRACT. Uncertainties in the number and age of glacial deposits within the Port architecture of the Port Nolloth Group. Particularly, we have distinguished an additional glacial deposit

Schrag, Daniel

92

Earth Planets Space, 52, 329336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system  

E-Print Network [OSTI]

Earth Planets Space, 52, 329�336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system with special reference to loss of magnetization after core recovery Toshitsugu Yamazaki1 , Peter A Magnetism, University of Minnesota, Minneapolis, MN 55455-0128, U.S.A. 3Hawaii Institute of Geophysics

Yamazaki, Toshitsugu

93

Gaseous Detonation-Driven Fracture of Tubes Tong Wa Chao  

E-Print Network [OSTI]

Gaseous Detonation-Driven Fracture of Tubes Thesis by Tong Wa Chao In Partial Fulfillment An experimental investigation of fracture response of aluminum 6061-T6 tubes under internal gaseous detonation on the detonation velocity, strain history, blast pressure from the crack opening, and crack speeds. The curved

94

EIS-0397: Lyle Falls Fish Passage Project, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

95

DOE - Office of Legacy Management -- University of Washington - WA 0-01  

Office of Legacy Management (LM)

Washington - WA 0-01 Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating under active NRC license WA.0-01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: None Indicated WA.0-01-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see

96

Energy-level and lifetime measurements for Sb iv and Sb v  

Science Journals Connector (OSTI)

A study of the beam-foil spectrum produced by a 1-MeV beam of antimony ions has yielded lifetimes for nine lowlying terms of Sb iv and six of Sb v. Decay-curve analysis incorporating...

Pinnington, E H; Ansbacher, W; Kernahan, J A; Gosselin, R N; Bahr, J L; Inamdar, A S

1985-01-01T23:59:59.000Z

97

Lattice thermal conductivity of Bi, Sb, and Bi-Sb alloy from first principles  

E-Print Network [OSTI]

Using first principles, we calculate the lattice thermal conductivity of Bi, Sb, and Bi-Sb alloys, which are of great importance for thermoelectric and thermomagnetic cooling applications. Our calculation reveals that the ...

Lee, Sangyeop

98

File:INL-geothermal-wa.pdf | Open Energy Information  

Open Energy Info (EERE)

wa.pdf wa.pdf Jump to: navigation, search File File history File usage Washington Geothermal Resources Size of this preview: 699 × 600 pixels. Full resolution ‎(4,835 × 4,147 pixels, file size: 3.28 MB, MIME type: application/pdf) Description Washington Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent State Countries United States UN Region Northern America States Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:45, 16 December 2010 Thumbnail for version as of 12:45, 16 December 2010 4,835 × 4,147 (3.28 MB) MapBot (Talk | contribs) Automated upload from NREL's "mapsearch" data

99

GRR/Section 15-WA-a - Air Quality Notice of Construction Permit | Open  

Open Energy Info (EERE)

5-WA-a - Air Quality Notice of Construction Permit 5-WA-a - Air Quality Notice of Construction Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-a - Air Quality Notice of Construction Permit 15-WA-a - Air Quality Notice of Construction Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-400-110 WAC 173-400-111 WAC 173-400-171 Triggers None specified This flowchart illustrates the process for obtaining an Air Quality Notice of Construction Permit. The Washington State Department of Ecology (WSDE) oversees the permitting process under WAC 173-400. 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf

100

Transport properties in AlInSb/InAsSb heterostructures  

SciTech Connect (OSTI)

Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1?y}Sb/InAs{sub 1?x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37?000 cm{sup 2}/V s is attainable in 15?nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

Zhang, Yuwei; Zhang, Yang, E-mail: zhang-yang@semi.ac.cn; Wang, Chengyan; Zeng, Yiping [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2013-12-28T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Method of making an InAsSb/InAsSbP diode lasers  

DOE Patents [OSTI]

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

Razeghi, M.

1997-08-19T23:59:59.000Z

102

GRR/Section 9-WA-b - State Environmental Review | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 9-WA-b - State Environmental Review GRR/Section 9-WA-b - State Environmental Review < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-b - State Environmental Review 9-WA-b - State Environmental Review.pdf Click to View Fullscreen Triggers None specified Once the lead agency is determined they are responsible for continuing forward with environmental review. In Washington, environmental review is effectuated through the developer completing an Environmental Checklist which assists the lead agency in determining whether the proposal will likely result in negative impacts on the environment. 9-WA-b - State Environmental Review.pdf 9-WA-b - State Environmental Review.pdf Error creating thumbnail: Page number not in range.

103

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

104

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect (OSTI)

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

105

ACCELERATED PROCESSING OF SB4 AND PREPARATION FOR SB5 PROCESSING AT DWPF  

SciTech Connect (OSTI)

The Defense Waste Processing Facility (DWPF) initiated processing of Sludge Batch 4 (SB4) in May 2007. SB4 was the first DWPF sludge batch to contain significant quantities of HM or high Al sludge. Initial testing with SB4 simulants showed potential negative impacts to DWPF processing; therefore, Savannah River National Laboratory (SRNL) performed extensive testing in an attempt to optimize processing. SRNL's testing has resulted in the highest DWPF production rates since start-up. During SB4 processing, DWPF also began incorporating waste streams from the interim salt processing facilities to initiate coupled operations. While DWPF has been processing SB4, the Liquid Waste Organization (LWO) and the SRNL have been preparing Sludge Batch 5 (SB5). SB5 has undergone low-temperature aluminum dissolution to reduce the mass of sludge for vitrification and will contain a small fraction of Purex sludge. A high-level review of SB4 processing and the SB5 preparation studies will be provided.

Herman, C

2008-12-01T23:59:59.000Z

106

Make It Work: Implementing SB 375  

E-Print Network [OSTI]

bridging of project and plan level review has been difficultStrengthening Plan-Level Review under SB 375 that if an adequate plan-level review is conducted for a

Altmaier, Monica; Barbour, Elisa; Eggleton, Christian; Gage, Jeffier; Hayter, Jason; Zahner, Ayrin

2009-01-01T23:59:59.000Z

107

Interpretation of a cross-cultural usability evaluation: A case study based on a hypermedia system for rare species management in Namibia  

Science Journals Connector (OSTI)

......Namibia is a large power distance country...come from a high power distance culture...hypermedia Information System for the Management...information such as handbooks, grey literature...evaluation of the IRAS system was integrated into...With the co-operation of the HCI course......

Barbara Paterson; Heike Winschiers-Theophilus; Tim T. Dunne; Britta Schinzel; Les G. Underhill

2011-05-01T23:59:59.000Z

108

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

4-022 4-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract entitled "Utility Scale Joint Venture Project," between Cummins Power Generation, Inc. and Sandia National Laboratories (Contract No. AB- 8717B) under Management and Operations Contract DE-AL04-84AL85000, DOE Docket No. W(A)94-022. The petitioner, Cummins Power Generation, Inc., (CPG) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or first actually reduce to practice in the course of work under the Utility Scale Joint Venture Project between Petitioner and Sandia National Laboratories (Sandia) under contract No. AB- 8717B. Sandia is operated by Sandia Corporation for the U.S. Department of Energy (DOE).

109

W(A)93-013 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

13 13 STATEMENT OF CONSIDERATIONS Request by AlliedSignal, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94462 between the United States Department of Energy (DOE) and AlliedSignal, Inc. DOE Docket: W(A)93-013 The Petitioner, AlliedSignal, Inc. (AlliedSignal), has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94462, a Cooperative Agreement with DOE. The project period is May 14, 1993 through May 13, 1996. The Cooperative Agreement covers work in designing a biological/chemical production process for caprolactam using microbial bioprocesses that convert cyclohexane to

110

W(A)93-039 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

39 39 STATEMENT OF CONSIDERATIONS Request by Air Products and Chemicals, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94461 between the United States Department of Energy (DOE) and Air Products and Chemicals, Inc. DOE Docket: W(A)93-039. The Petitioner, Air Products and Chemicals, Inc., (Air Products) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94461 a Cooperative Agreement with DOE. The contract covers a four phase development program for a recently patented technology developed at Air Products entitled "Novel Selective Surface Flow (SSF T ) Membranes for the

111

GRR/Section 12-WA-a - Live Wildlife Taking Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 12-WA-a - Live Wildlife Taking Permit GRR/Section 12-WA-a - Live Wildlife Taking Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-WA-a - Live Wildlife Taking Permit 12-WA-a - Live Wildlife Taking Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Fish and Wildlife Regulations & Policies WAC 232-12-064 Triggers None specified In Washington, it is unlawful to take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064. 12-WA-a - Live Wildlife Taking Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

112

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

73: W.A. Parish Post-Combustion CO2 Capture and Sequestration 73: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

113

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department  

Broader source: Energy.gov (indexed) [DOE]

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) June 12, 2013 DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) More Documents & Publications Regulatory Burden RFI DOE response to questions from AHAM on the supplemental proposed test procedure for residential clothes washers Scoping Study to Evaluate Feasibility of National Databases for EM&V Documents and Measure Savings: Appendices

114

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

115

GRR/Section 3-WA-b - Land Access Overview | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-b - Land Access Overview GRR/Section 3-WA-b - Land Access Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-b - Land Access Overview 3-WA-b - Land Access Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Triggers None specified Any developer that needs access to or through state lands must obtain the appropriate permit or lease. The developer will obtain such permit or lease through the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

116

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network [OSTI]

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

117

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

118

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory  

SciTech Connect (OSTI)

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

2013-06-17T23:59:59.000Z

119

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department of  

Broader source: Energy.gov (indexed) [DOE]

7: Hanford Site Natural Gas Pipeline, Richland, WA 7: Hanford Site Natural Gas Pipeline, Richland, WA EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA Summary This EIS will evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas pipeline. The pipeline would deliver natural gas to support the Waste Treatment Plant and the 242-A Evaporator operations in the 200 East Area of the Hanford Site. Public Comment Opportunities None available at this time. For more information, contact: Mr. Douglas Chapin, NEPA Document Manager U.S. Department of Energy Richland Operations Office P.O. Box 550, MSIN A5-11 Richland, WA 99352 Documents Available for Download January 23, 2012 EIS-0467: Notice of Intent to Prepare an Environmental Impact Statement and

120

GRR/Section 9-WA-c - State Environmental Impact Statement | Open Energy  

Open Energy Info (EERE)

GRR/Section 9-WA-c - State Environmental Impact Statement GRR/Section 9-WA-c - State Environmental Impact Statement < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-c - State Environmental Impact Statement 9-WA-c - State Environmental Impact Statement.pdf Click to View Fullscreen Triggers None specified The primary purpose of an Environmental Impact Statement (EIS) is to ensure that the Washington State Environmental Policy Act (SEPA) policies are an integral part of the ongoing programs and actions of state and local government. An EIS must provide impartial discussion of significant environmental impacts and must inform decision makers and the public of reasonable alternatives, including mitigation measures that would avoid or minimize adverse impacts or enhance environmental quality. WAC 197-11-400.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells |  

Open Energy Info (EERE)

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-f - Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.44.100 Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well in a different location than a previous well, drill an additional well at an existing location, or drill a replacement well at the same

122

GRR/Section 11-WA-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-WA-a - State Cultural Considerations Overview GRR/Section 11-WA-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-a - State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf Click to View Fullscreen Triggers None specified The developer will be required to comply with Washington state law when human remains or other cultural resources are discovered on a project site. Cultural resources include both historic and archaeological resources and sites. The discovery of cultural resources may require obtaining a permit and providing public notice and notice to Indian Tribes. Once the necessary procedures have been followed, the developer may continue with the project.

123

GRR/Section 14-WA-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-c - Underground Injection Control Permit GRR/Section 14-WA-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-c - Underground Injection Control Permit 14-WA-c - Underground Injection Control Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Chapter 173-218 WAC Non-endangerment Standard Triggers None specified The Safe Drinking Water Act requires Washington to implement technical criteria and standards to protect underground sources of drinking water from contamination. Under Chapter 173-218 WAC, the Washington State Department of Ecology (WSDE) regulates and permits underground injection control (UIC) wells in Washington. The Environmental Protection Agency

124

GRR/Section 18-WA-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 18-WA-a - Underground Storage Tank Process GRR/Section 18-WA-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-a - Underground Storage Tank Process 18-WA-a - Underground Storage Tank Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.76 Washington Administrative Code Chapter 173-360 Triggers None specified Washington has a federally-approved state Underground Storage Tank (UST) program regulated by the Washington State Department of Ecology (WSDE) under Revised Code of Washington Chapter 90.76 and Washington Administrative Code Chapter 173-360. Washington defines an "Underground

125

GRR/Section 5-WA-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-WA-a - Drilling and Well Development GRR/Section 5-WA-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-WA-a - Drilling and Well Development 5-WA-a.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified In Washington geothermal drilling and well development are regulated by the Washington State Department of Natural Resources (WSDNR). Geothermal production wells and core holes deeper than 750ft require the developer go through the whole WSDNR permitting process (which requires a public hearing) and require that the developer complete the State Environmental

126

GRR/Section 3-WA-e - State Right of Way Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-e - State Right of Way Process GRR/Section 3-WA-e - State Right of Way Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-e - State Right of Way Process 3-WA-e - State Right of Way Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-36-350 RCW 79-36-520 RCW 79-36-530 Triggers None specified This flowchart illustrates the process for obtaining a right of way over state lands in Washington. The right of way process is overseen by the Washington State Department of Natural Resources (WSDNR). The right of way process is regulated under Revised Code of Washington (RCW) 79-36-350. The developer may apply for an easement, permit or license for a right of

127

GRR/Section 14-WA-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-d - Section 401 Water Quality Certification GRR/Section 14-WA-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-d - Section 401 Water Quality Certification 14-WA-d - 401 Water Quality Certification.pdf Click to View Fullscreen Contact Agencies U S Army Corps of Engineers Washington State Department of Ecology Regulations & Policies Revised Statute of Washington Chapter 90.48 Washington Administrative Code Chapter 173-201A Washington Administrative Code 173-225-030 Triggers None specified Developers requiring a Section 404 Dredge and Fill Permit from the U S Army Corps of Engineers (Corps) are required to obtain a Section 401 Water Quality Certification from the state of Washington. The Washington State

128

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change of Water  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water 19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-d - Water Conservancy Board Transfer or Change of Water Right 19-WA-d - Water Conservancy Board Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.80 RCW 90.03.380 90.03.390 RCW 90.44.100 Triggers None specified In 1997, the Washington Legislature authorized the creation of water conservancy boards through the enactment of Revised Code of Washington Chapter 90.80 to expedite the administrative process for voluntary water right transfers within individual counties. In counties where a water

129

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well | Open  

Open Energy Info (EERE)

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well GRR/Section 19-WA-e - Water Well Notice of Intent for New Well < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-e - Water Well Notice of Intent for New Well 19-WA-e - Water Well Notice of Intent for New Well.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well to access the ground water. When a developer needs to drill a new well, the developer must complete the Notice of Intent (NOI) to Drill a Well form and submit the form to the Washington State Department of Ecology

130

GRR/Section 14-WA-b - State NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-b - State NPDES Permitting Process GRR/Section 14-WA-b - State NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-b - State NPDES Permitting Process 14-WA-b - State NPDES Permitting Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology United States Environmental Protection Agency Regulations & Policies Clean Water Act Chapter 90.48 RCW Chapter 173-216 WAC Triggers None specified Section 402 of the Clean Water Act (CWA) required the Environmental Protection Agency (EPA) to establish the National Pollutant Discharge Elimination System (NPDES) to regulate discharge of pollutants from point sources. In Washington, the EPA has delegated responsibility of NPDES to

131

GRR/Section 4-WA-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 4-WA-a - State Exploration Process GRR/Section 4-WA-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-WA-a - State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified Geothermal exploration in Washington requires a Geothermal Exploration Permit from the Washington State Department of Natural Resources (WSDNR) for invasive exploration or drilling. Operations that require an exploration or drilling permit will also require the developer to initiate the State Environmental Policy Act (SEPA). In Washington geothermal resources are regulated under Chapter 78.60 RCW

132

GRR/Section 3-WA-d - State Land Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-d - State Land Lease GRR/Section 3-WA-d - State Land Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-d - State Land Lease 3-WA-d - State Land Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-13-020 RCW 79-13-140 RCW 79-13-150 WAC 332-22-030 WAC 332-22-105 WAC 332-22-110 Triggers None specified This flowchart illustrates the process used to lease state lands in Washington. The Washington State Department of Natural Resources (WSDNR) oversees the land leasing process through the Commissioner of Public Lands ("commissioner"). The WSDNR may lease state lands for purposes it deems advisable, including commercial, industrial, residential, agricultural, and

133

GRR/Section 3-WA-c - Utility Franchise or Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 3-WA-c - Utility Franchise or Permit Process GRR/Section 3-WA-c - Utility Franchise or Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-c - Utility Franchise or Permit Process 3-WA-c - Utility Franchise or Permit Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Department of Transportation Regulations & Policies WAC 468-34-060 WAC 468-34-080 WAC 468-34-110 WAC 468-34-160 WAC 468-34-170 Triggers None specified This flowchart illustrates the process of obtaining a franchise or permit through a state highway right of way in Washington State. A utility permit or franchise is required for occupancy of a highway right of way by utility facilities, including private lines. WAC 468-34-160. The process is

134

GRR/Section 19-WA-b - New Water Right Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 19-WA-b - New Water Right Permit Process GRR/Section 19-WA-b - New Water Right Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-b - New Water Right Permit Process 19-WA-b - New Water Right Permit Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 Triggers None specified Washington uses a prior appropriation system for the distribution of both surface water and ground water rights in which water users receive the right to use water on a "first in time, first in right" basis. Under Washington law, the waters of Washington belong collectively to the public

135

GRR/Section 19-WA-c - Transfer or Change of Water Right | Open Energy  

Open Energy Info (EERE)

9-WA-c - Transfer or Change of Water Right 9-WA-c - Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-c - Transfer or Change of Water Right 19-WA-c - Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.03.380 Revised Code of Washington 90.44.100 Revised Code of Washington Chapter 90.80 Triggers None specified Much of Washington's public waters have been accounted for through water right claims, permits, or certificates. As a result, many individuals seeking water rights try to acquire existing water rights already in use or change the use of a current water right they already hold. Certain elements

136

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b  

E-Print Network [OSTI]

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b a Mathematical Institute of crystalline solids at atomic resolution from electron microscopic images can be considered the ``holy grail

Kosters, Walter

137

DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

138

GRR/Section 3-WA-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-a - State Geothermal Lease GRR/Section 3-WA-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-a - State Geothermal Lease 3-WA-a State Geothermal Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Chapter 79.14 RCW Chapter 344-12 WAC Triggers None specified The State of Washington is still in the process of developing and finalizing the rules and regulations related to geothermal leases on state lands; however, the Washington State Department of Natural Resources (WSDNR) expects the process to be similar to the process for leasing state lands for oil and natural gas development. The rules and regulations for

139

GRR/Section 11-WA-c - Archaeological Resource Discovery Process | Open  

Open Energy Info (EERE)

GRR/Section 11-WA-c - Archaeological Resource Discovery Process GRR/Section 11-WA-c - Archaeological Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-c - Archaeological Resource Discovery Process 11-WA-c - Archaeological Resource Discovery Process.pdf Click to View Fullscreen Triggers None specified In the state of Washington, cultural resource concerns are integrated as early as possible into the planning for capital projects and are protected if discovered during construction. Washington defines "Cultural resources" as archeological and historical sites and artifacts, and traditional areas or items of religious, ceremonial and social uses to affected tribes. Washington defines an "Archaeological resource" as any

140

GRR/Section 19-WA-a - Water Access and Water Rights Overview | Open Energy  

Open Energy Info (EERE)

9-WA-a - Water Access and Water Rights Overview 9-WA-a - Water Access and Water Rights Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-a - Water Access and Water Rights Overview 19-WA-a - Water Access and Water Rights Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 RCW 90.44.050 Triggers None specified Similar to many western states, only a small amount of water is available for appropriation in Washington. As a result, Washington has developed a comprehensive regulatory scheme for the distribution of water rights and use of water in the state. Washington employs a prior appropriation or

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

SB 375 IMPLEMENTATION: FROM PLAN TO REALITY  

E-Print Network [OSTI]

Development Cross-Agency Facilitation and Coordination Funding and Support for Sustainable Communities sustainable communities in a post-SB 375 world. · Urban Greening: $41.5 million in capital projects and plans Planning - Guidance documents - Metrics and indicators - Connecting dots across state agencies - Building

California at Davis, University of

142

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

143

GRR/Section 15-WA-b - Air Operating Permit | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 15-WA-b - Air Operating Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-b - Air Operating Permit 15-WA-b - Air Operating Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-401-500 WAC 173-401-800 WAC 173-401-810 WAC 173-401-735 WAC 173-401-610 Triggers None specified This flowchart illustrates the process for obtaining an Air Operating Permit in Washington State. The Washington State Department of Ecology (WSDE) issues Air Operating Permit under WAC 173-401. An Air Operating Permit is required if a facility has the potential to emit

144

GRR/Section 9-WA-a - State Environmental Overview | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 9-WA-a - State Environmental Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-a - State Environmental Overview 9-WA-a - State Environmental Overview.pdf Click to View Fullscreen Triggers None specified The Washington State Environmental Policy Act (SEPA), chapter 43.21 RCW, requires all governmental agencies to consider the environmental impacts of a proposal before making decisions. Washington uses an Environmental Checklist and Environmental Review (ER) to provide information to help government agencies identify impacts from their proposals and determine whether an Environmental Impact Statement (EIS) is necessary.

145

MEMORANDUM : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A)  

Broader source: Energy.gov (indexed) [DOE]

: APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) 2009-047 GRANTED FOR US SOLAR HOLDINGS LLC UNDER AGREEMENT NO. DE-FC36-08G018 155 US Solar Holdings LLC ("US Solar") has requested that the Department of Energy ("DOE") modify or clarify the cost share requirements set forth in the statement of considerations for the granted advance patent waiver W(A) 2009-047. Specifically, the statement of considerations, as originally granted, states the following: The total cost of the award is approximately $4 million with the Petitioner providing about 50% cost sharing. This waiver is contingent upon the Petitioner maintaining, in aggregate, the above cost sharing percentage over the course of the agreement. Rather than just provide an aggregate cost share requirement of 50% for the agreement, US Solar

146

GRR/Section 7-WA-a - Energy Facility Siting Process | Open Energy  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » GRR/Section 7-WA-a - Energy Facility Siting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-WA-a - Energy Facility Siting Process 7-WA-a - Energy Facility Siting Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Energy Facility Site Evaluation Council Regulations & Policies RCW 80.50.60(1) WAC 463-60 RCW 80.50.090(2) WAC 463-30-270 WAC 463-30-320 Triggers None specified Under RCW 80.50.60(1) a developer may not begin construction of a new energy facility site until they obtain Energy Facility Siting certification

147

GRR/Section 11-WA-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 11-WA-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-b - Human Remains Process 11-WA-b - Human Remains Process (1).pdf Click to View Fullscreen Triggers None specified This flowchart illustrates the necessary procedure when a developer discovers human remains on a project site. In Washington, every person has the duty to notify the coroner upon the discovery of any human remains in the most expeditious manner possible. The Washington Department of Archaeology and Historic Preservation (DAHP) handles the disposition of non-forensic remains, while the county coroner handles the disposition of

148

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA | Department  

Broader source: Energy.gov (indexed) [DOE]

49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA 49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA SUMMARY This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD August 9, 2013 EA-1949: FERC Notice of Availability Errata Sheet

149

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells  

Science Journals Connector (OSTI)

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells ... Here we report Sb2Se3 solar cells fabricated from thermal evaporation. ... Sb2Se3; thermal evaporation; thin film; solar cells ...

Xinsheng Liu; Jie Chen; Miao Luo; Meiying Leng; Zhe Xia; Ying Zhou; Sikai Qin; Ding-Jiang Xue; Lu Lv; Han Huang; Dongmei Niu; Jiang Tang

2014-06-12T23:59:59.000Z

150

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

151

K2CsSb Cathode Development  

SciTech Connect (OSTI)

K{sub 2}CsSb is an attractive photocathode for high current applications. With a quantum efficiency of >4% at 532nm and >10% at 355nm, it is the only cathode to have demonstrated an average current of 35mA in an accelerator environment We describe ongoing cathode development work. for the energy recovery linac being constructed at BNL Several cathodes have been created on both copper and stainless steel substrates, and their spatial uniformity and spectral response have been characterized. Preliminary lifetime measurements have been performed at high average current densities (>1 mA/mm{sup 2}).

Smedley,J.; Rao, T.; Wang, E.

2008-10-01T23:59:59.000Z

152

GRR/Section 18-WA-b - Dangerous Waste Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 18-WA-b - Dangerous Waste Permit GRR/Section 18-WA-b - Dangerous Waste Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-b - Dangerous Waste Permit 18-WA-b - Dangerous Waste Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-303-020 WAC 173-303-060 WAC 173-303-070 WAC 173-303-071 WAC 173-303-072 WAC 173-303-081 WAC 173-303-082 WAC 173-303-090 WAC 173-303-100 WAC 173-303-110 WAC 173-303-140 WAC 173-303-220 WAC 173-303-281 WAC 173-303-282 WAC 173-303-803 WAC 173-303-845 Triggers None specified The Washington State Department of Ecology (WSDE) oversees the permitting process for dangerous and solid waste. In Washington, a developer must obtain a permit if they handle dangerous waste and solid waste and are

153

DOE Zero Energy Ready Home Case Study: Clifton View Homes, Whidbey Island, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home on Whidbey Island, WA, that scores HERS 37 without PV or HERS -13 with 10 kW PV, enough to power the home and an electric car. The two-story custom home...

154

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA  

E-Print Network [OSTI]

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA Bonneville is a regional agency that markets federal hydropower and augments its power supply with market, everyday citizens, to pay illegally inflated power costs. Because of this, Bonneville should have the legal

155

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

the Hanford Site, WA, USA. Woods, Katharine N. ; Singleton,reside at DOE sites across the USA. Nitrate concentrations >

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

156

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

157

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

158

The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies  

SciTech Connect (OSTI)

The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

Baggetto, Loic [ORNL; Hah, Hien-Yoong [University of Tennessee (UT) Space Institute; Jumas, Dr. Jean-Claude [Institut Charles Gerhardt, University of Montpellier II, FRANCE; Johnson, Prof. Dr. Charles E. [University of Tennessee (UT) Space Institute; Johnson, Jackie A. [University of Tennessee (UT) Space Institute; Keum, Jong Kahk [ORNL; Bridges, Craig A [ORNL; Veith, Gabriel M [ORNL

2014-01-01T23:59:59.000Z

159

Characterization of improved InSb interfaces  

Science Journals Connector (OSTI)

Improved quality surfaces on n?type InSb have been produced using a low?temperature chemical vapor deposition (LTCVD) of SiO2 by pyrolytic decomposition of silane in the presence of oxygen. Preservation of the thin natural oxide on the InSbsurface through a suitable LTCVD process results in a surface state density ?1010 eV?1?cm?2 and without CV hysteresis. Confirmation of these results is made by both quasistatic CV and conductance measurements on MIS structures. Complications introduced by the presence of lateral nonuniformity of the LTCVD oxide and thus in the surface potential have been accounted for in the observed low density measurements. The presence chemical identification and thickness of the natural oxide both before and after the LTCVD process has been idependently confirmed by XPS. The apparent oxidation state and resultant electrical properties are identified with changes in LTCVD reactor conditions.

J. D. Langan; C. R. Viswanathan

1979-01-01T23:59:59.000Z

160

Planning for sustainable communities: Regional incentives and local policy under SB375  

E-Print Network [OSTI]

#12;SB 375: Sustainable Communities & Climate Protection Act (2008) isolation dispersion automobility

California at Davis, University of

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Anemometer Data (Wind Speed, Direction) for Quinault #3, WA (2004 - 2005) |  

Open Energy Info (EERE)

Quinault #3, WA (2004 - 2005) Quinault #3, WA (2004 - 2005) Dataset Summary Description Wind data collected from Quinault Indian Reservation in Washington from an anemometer as part of the Native American anemometer loan program. Monthly mean wind speed is available for 2004 through 2005, as is wind direction and turbulence data. Data is reported from a height of 20 m. The data was originally made available by Wind Powering America, a DOE Office of Energy Efficiency & Renewable Energy (EERE) program. A dynamic map displaying all available data from DOE anemometer loan programs is available http://www.windpoweringamerica.gov/anemometerloans/projects.asp. Source EERE Date Released December 02nd, 2010 (4 years ago) Date Updated December 02nd, 2010 (4 years ago) Keywords wind

162

EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA |  

Broader source: Energy.gov (indexed) [DOE]

855: Creston-Bell Rebuild Project, Spokane and Lincoln 855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA Summary This EA (also known as DOE/EA-4406 or DOE/BP-4406) evaluates the potential environmental impacts from rebuilding the Creston-Bell No. 1 115-kV transmission line, including the replacement of wood poles and associated structural components and conductor and access road improvements. The 54-mile long, wood pole line extends from the Bonneville Power Administration (BPA) Creston substation to the BPA Bell substation near Spokane in Lincoln and Spokane Counties, Washington. Additional information about this project is available on the BPA website. Public Comment Opportunities None available at this time. Documents Available for Download

163

DOE Zero Energy Ready Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case-study of a DOE Zero Energy Ready Home on Whidbey Island, WA, that scored HERS 45 without PV. This 2,908 ft2 custom/system home has a SIP roof and walls, R-20 rigid foam under slab, triple-pane windows, ground source heat pump for radiant floor heat, and a unique balanced ventilation system using separate exhaust fans to bring air into and out of home.

164

DOE Zero Energy Ready Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 37 without PV, HERS -1 with PV. This 1,915 ft2 custom home has SIP walls and roof, R-20 XPS under the slab, triple-pane windows, an air to water heat pump for radiant heat, and balanced ventilation with timer controlled fans to bring in and exhaust air.

165

DOE Zero Energy Ready Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 34 without PV. This 2,000 ft2 system home has R-45 double-stud walls, an unvented flat roof with 2 inches of spray foam plus 18 inches blown cellulose, R-42 XPS under slab, triple-pane windows, and a ductless mini-split heat pump.

166

SB Electronics Breaks Ground on New Factory | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory April 29, 2010 - 5:22pm Addthis U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi Paul Lester Communications Specialist, Office of Energy Efficiency and Renewable Energy A Vermont company broke ground on a new factory that will produce cutting-edge technology for electric and hybrid cars and create more than 100 jobs. The event ushering in SB Electronics' power ring capacitor facility in Barre was attended by Vermont Gov. Jim Douglas and federal, state and local

167

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect (OSTI)

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

168

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect (OSTI)

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

169

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

170

Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors  

SciTech Connect (OSTI)

The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

1998-07-01T23:59:59.000Z

171

Effect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) thin films  

SciTech Connect (OSTI)

GaAs-based quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) has been successfully prepared by molecular-beam epitaxy. High-resolution x-ray diffraction measurements indicate that the lattice constant has a notable alteration with changing Sb content. Magnetic measurements demonstrate the same evolution of the Curie temperature T{sub C} and the effective Mn content x{sub eff} with increasing Sb content. The incorporation of low Sb content is of benefit to increasing x{sub eff}, thus, increasing T{sub C}. However, higher Sb content degrades the crystal quality, resulting in a decrease of x{sub eff}. Experimental results show that T{sub C} is proportional to the product of x{sub eff} and p{sup 1/3}, which is consistent with the Zener Model. The exchange energy N{sub 0}? is calculated to be ?1.09 eV, which is similar to that of (Ga, Mn)As.

Deng, J. J.; Che, J. T.; Chen, J.; Wang, W. J.; Hu, B. [Mathematics and Physics Department, North China Electric Power University, Beijing 102206 (China)] [Mathematics and Physics Department, North China Electric Power University, Beijing 102206 (China); Wang, H. L.; Zhao, J. H. [Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)] [Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-12-28T23:59:59.000Z

172

Investigation of the Fe1+xSb system  

Science Journals Connector (OSTI)

X-ray diffraction, bulk magnetization, and Fe57 Mssbauer spectroscopic measurements on Fe1+xSb system for various values of x (0.14?x?0.35) are reported. The x-ray data suggest that the ASTM (American Society for Testing and Materials) data file for Fe1+xSb should be modified. The lattice Nel temperatures obtained from magnetic susceptibility and Mssbauer spectroscopic measurements are in nice agreement with each other and decrease linearly with increase in x. The Nel temperatures for the ordering of interstitial Fe atoms are higher than 60 K and increase with x. The low-temperature Mssbauer spectra have been analyzed in terms of a Lorentzian distribution of the magnetic hyperfine field at lattice sites, a low-field site, and a relatively high-field interstitial site. Also included are comments on the low magnetic moment of Fe in Fe1+xSb.

R. Kumar; K. S. Harchand; Vishwamittar; K. Chandra; P. Jernberg; T. Ericsson; R. Wappling

1985-07-01T23:59:59.000Z

173

File:06-WA-b - Washington Construction Storm Water Permit.pdf | Open Energy  

Open Energy Info (EERE)

File File Edit History Facebook icon Twitter icon » File:06-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water Permit.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 60 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:28, 6 December 2013 Thumbnail for version as of 15:28, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs) 15:25, 6 December 2013 Thumbnail for version as of 15:25, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs)

174

File:EIA-Eastern-OR-WA-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

Eastern-OR-WA-BOE.pdf Eastern-OR-WA-BOE.pdf Jump to: navigation, search File File history File usage Eastern Oregon and Washington By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 460 KB, MIME type: application/pdf) Description Eastern Oregon and Washington By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Oregon, Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 18:00, 20 December 2010 Thumbnail for version as of 18:00, 20 December 2010 1,650 × 1,275 (460 KB) MapBot (Talk | contribs) Automated bot upload

175

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

176

Born-Oppenheimer breakdown effects and hyperfine structure in the rotational spectra of SbF and SbCl  

Science Journals Connector (OSTI)

Pure rotational spectra have been measured for the ground electronic states of SbF and SbCl. The molecules were prepared by laser ablation of Sb metal in the presence of SF6 or Cl2, respectively. Their spectra were measured with a cavity pulsed jet Fourier transform microwave spectrometer. Although both molecules have two unpaired electrons, they are subject to Hunds coupling case (c), and have X10+ ground states. The spectra have been interpreted with the formalism of 1?+ molecules. For both molecules spectra of several isotopomers have been measured in the ground and first excited vibrational states. Large hyperfine splittings attributable to both nuclear quadrupole coupling and nuclear spin-rotation coupling have been observed. A Dunham-type analysis has produced unusually large Born-Oppenheimer breakdown parameters, which are interpreted in terms of the electronic structures of the molecules.

Stephen A. Cooke; Michael C.L. Gerry

2005-01-01T23:59:59.000Z

177

Crystal structure and bonding characteristics of In-doped {beta}-Zn{sub 4}Sb{sub 3}  

SciTech Connect (OSTI)

The effects of indium impurity on the crystal structure and bonding characteristics of In-doped {beta}-Zn{sub 4}Sb{sub 3} were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb-Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb-In bond, resulting in much low lattice thermal conductivity of 0.49 W{sup -1} K{sup -1} of Zn{sub 4}Sb{sub 2.96}In{sub 0.04}. - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb-Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: Black-Right-Pointing-Pointer The indium impurity preferentially substitutes one of Sb atoms in Sb-Sb dimer at the 12c Sb(2) site. Black-Right-Pointing-Pointer The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. Black-Right-Pointing-Pointer The binding energy of Sb 3d shifts to low value. Black-Right-Pointing-Pointer The charge transfer occurs from In and Zn to Sb.

Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China) [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Cheng, Sudan; Wei, Ping; Yu, Jian [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-09-15T23:59:59.000Z

178

Electronic-Structure of the Semimetals Bi and Sb  

E-Print Network [OSTI]

We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important...

LIU, Y.; Allen, Roland E.

1995-01-01T23:59:59.000Z

179

DOE Challenge Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov (indexed) [DOE]

TC Legend TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

180

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM  

Broader source: Energy.gov (indexed) [DOE]

it: EE 000 0853 it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination/ Categorical Exclusion Reviewer's Specific Instructions and Rationale (Restrictions and Allowable Activity) Kitsap Built Green Projects B5.1 Waste Stream, Engineering, and Historic Preservation clauses. Kitsap County Building Retrofits and Energy Efficiency Upgrades (Green Jobs Initiative) B5.1 except geothermal Waste Stream, Engineering, and Historic Preservation clauses. Prohibited: Any implementation of geothermal projects/construction activities without NEPA approval from DOE. Geothermal projects are to be provided to DOE for analysis. Energy Efficiency Implementation and Strategy A9, All, B5.1 None Energy Services Corps A9, All, B5.1

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

DOE Challenge Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Dwell Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

182

Microsoft Word - CX-AccessRoads-KingCoWA-FY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

22, 2013 22, 2013 REPLY TO ATTN OF: KEPR-Covington SUBJECT: Environmental Clearance Memorandum Rick Ross Engineer - TELF-TPP-3 Proposed Action: Covington District Culvert Replacements Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): Appendix B1.3, Routine Maintenance Location: King County, WA Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA is proposing to replace existing culverts at 12 access road stream crossings that present barriers to fish passage. These improvements will be made on BPA easement access roads within DNR owned and managed lands. BPA will make these improvements by installing new fish friendly culverts and/or bridges at each stream crossing. The current stream crossings do not meet DNR fish passage standards that will be in

183

DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Clifton View Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

184

Interdiffusion in NiMnSb/V/NiMnSb: X-ray and neutron reflectivity investigation of ion beam sputtered trilayer systems  

SciTech Connect (OSTI)

The new trilayer system NiMnSb/V/NiMnSb on MgO(001) was investigated by means of vibrating sample magnetometry (VSM), x-ray, and neutron reflectivity. VSM revealed a coercive field H{sub c}=23 Oe and a hysteresis loop similar to that of an uncoupled ferromagnet. The x-ray and neutron reflectivity data proved that interface roughnesses of 10 {Angstrom} are present. A detailed analysis yielded significant interdiffusion at the NiMnSb/V interfaces which is one possible explanation for the weak magnetoresistance effect measured in similar NiMnSb-based multilayer systems. {copyright} {ital 1999 American Institute of Physics.}

Schlomka, J.; Tolan, M.; Press, W. [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany)] [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany); Fitzsimmons, M.R. [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Siebrecht, R. [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France)] [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France); Schubert, D.W. [GKSS Forschungszentrum, 21502 Geesthacht (Germany)] [GKSS Forschungszentrum, 21502 Geesthacht (Germany); Simon, P. [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)] [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)

1999-11-01T23:59:59.000Z

185

Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites  

SciTech Connect (OSTI)

Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

Hui, Si [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Nielsen, Michele D. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Homer, Mark R.; Medlin, Douglas L. [Sandia National Laboratories, Livermore, California 94550 (United States); Tobola, Janusz [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, 30-059 Krakow (Poland); Salvador, James R. [Chemical and Materials Systems Laboratory, GM R and D Center, Warren, Michigan 48090 (United States); Heremans, Joseph P. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States); Pipe, Kevin P. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-03-14T23:59:59.000Z

186

Nr. 077 / 2014 // 6. Mai 2014 Prof. Ngugi wa Thiong'o whrend seiner Rede zur Annahme der Ehrendoktorwrde  

E-Print Network [OSTI]

Nr. 077 / 2014 // 6. Mai 2014 1/5 Prof. Ngugi wa Thiong'o während seiner Rede zur Annahme der der afrikanischen Partneruniversitäten im Netzwerk der BIGSAS würden den Geehrten begleiten. Die Rede

Ullmann, G. Matthias

187

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel  

E-Print Network [OSTI]

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel A. De1 , H. K. D. H. Bhadeshia2 and T. DebRoy3 1 Indian Institute of Technology- ium alloys has been applied to the FSW of steel. The calculations were extended to predict

Cambridge, University of

188

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

189

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

190

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee)ng Loca)on Date -Change in Slide Master CDP FINAL DESIGN REVIEW  

E-Print Network [OSTI]

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Outline Single PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Background Estimation ­ One of the unsolved issues

Masci, Frank

191

Lattice Vibrations in La(Ce)Fe4Sb12 and CoSb3: Inelastic Neutron Scattering and Theory  

SciTech Connect (OSTI)

We present results of time-of-flight inelastic neutron scattering phonon density of states measurements on (La,Ce){sub 0.9}Fe{sub 4}Sb{sub 12} and CoSb{sub 3} as well as of a detailed comparison with lattice dynamical models in the literature. The MARI experimental setup is replicated by a theory for scattering from a polycrystalline material. The model considered for the filled materials is a local density approximation (LDA) based short-range force constant model and those considered for CoSb{sub 3} are the LDA-based model with the La-related parameters removed and a semiempirical model. We show that the presence of La significantly affects the shape of the spectrum. We also conclude that upon filling the Sb intrasquare force constants are weakened and that the transition-metal Sb bonds are almost unchanged.

Feldman, J. L. [Naval Research Laboratory, Washington, D.C.; Dai, Pengcheng [ORNL; Enck, Thomas P [ORNL; Sales, Brian C [ORNL; Mandrus, David [ORNL; Singh, David J [ORNL

2006-01-01T23:59:59.000Z

192

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

193

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

194

From plan to practice: implementing SB 617, California's regulatory review reform.  

E-Print Network [OSTI]

??SB 617 (Calderon & Pavley, 2011) is an ambitious experiment to improve state regulations and increase government transparency. The statute reforms Californias regulatory review process (more)

Marin, Angela K.

2013-01-01T23:59:59.000Z

195

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network [OSTI]

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

196

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

197

A review of "Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625." by Charles W.A. Prior  

E-Print Network [OSTI]

REVIEWS 151 Charles W.A. Prior. Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625. Cambridge: Cambridge University Press, 2005. xiv + 294 pp. $85.00. Review by GRAHAM PARRY, UNIVERSITY OF YORK. Defining the Jacobean...

Parry, Graham

2006-01-01T23:59:59.000Z

198

Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy  

SciTech Connect (OSTI)

High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

2011-10-01T23:59:59.000Z

199

Analysis of Senate Bill 365: Analysis of the Potential Impacts of SB 365: Out-of-State Carriers  

E-Print Network [OSTI]

be 8,374. Public Health Implications Enrollees of out-of-the potential health implications of SB 365. Severalto consider the health implications of SB 365 with regard to

California Health Benefits Review Program (CHBRP)

2007-01-01T23:59:59.000Z

200

AlSb Formation in UHV by Laser Annealing of Evaporated A1 and Sb Films. Characterization by AES and XPS  

Science Journals Connector (OSTI)

Results reported here involve the interaction of a pulsed and doubled Nd:YAG laser beam with multilayer A1 and Sb metallic samples (in stoichiometric proportion) which has been studied under ultra-high-vacuum (UHV

E. Petit; P. Warnant; P. A. Thiry; R. Caudano

1986-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

202

Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective  

E-Print Network [OSTI]

E*PCOS2011 Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical-GST. Key words: phase change materials, Ag/In/Sb/Te alloys, density functional, molecular dynamics 1. INTRODUCTION Phase change (PC) materials are chalcogenide alloys that switch very rapidly between the amorphous

203

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

204

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network [OSTI]

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

205

Describing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function  

E-Print Network [OSTI]

of leaf area of a wide variety of loblolly pine trees. FOR. SCI. 51(2):93­101. Key Words: ProbabilityDescribing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function Mauricio Jerez fractions of leaf area calculated with fitted SB functions matched measured values well; cumulative values

Cao, Quang V.

206

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect (OSTI)

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

207

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications  

DOE Patents [OSTI]

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11T23:59:59.000Z

208

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network [OSTI]

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

209

Illinois SB 1987: the Clean Coal Portfolio Standard Law  

SciTech Connect (OSTI)

On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

NONE

2009-01-15T23:59:59.000Z

210

Event:Sustainable Biomass for Electricity Conference (SB4E) | Open Energy  

Open Energy Info (EERE)

Biomass for Electricity Conference (SB4E) Biomass for Electricity Conference (SB4E) Jump to: navigation, search Calendar.png Sustainable Biomass for Electricity Conference (SB4E): on 2012/05/02 The Conference on Sustainable Biomass for Electricity (SB4E), organized by UN-Energy in cooperation with the Global Bioenergy Partnership (GBEP) and other partners, will consider the role of biomass technologies in decarbonizing the global energy system. Acknowledging the readily available and cost effective potential for emission reductions that could be achieved through the large-scale deployment of sustainable biomass for electricity production, the SB4E Conference will provide an opportunity for governments, international organizations and the private sector to share knowledge, lessons, best practices and experiences and to join efforts

211

Nepheline Formation Potential in Sludge Batch 4 (SB4)  

SciTech Connect (OSTI)

The effect of crystallization on glass durability is complex and depends on several interrelated factors including the change in residual glass composition, the formation of internal stress or microcracks, and the preferential attack at the glass-crystal interface. Perhaps one of the most significant effects is the type and extent (or fraction) of crystallization and the resulting change to the residual glass composition. A strong increase in glass dissolution (or decrease in durability) has been observed in previous studies in glasses that formed aluminum-containing crystals, such as NaAlSiO{sub 4} (nepheline) and LiAlSi{sub 2}O{sub 6}, and crystalline SiO{sub 2}. Although the addition of Al{sub 2}O{sub 3} to borosilicate glasses enhances the durability of the waste form (through creation of network-forming tetrahedral Na{sup +}-[AlO{sub 4/2}]{sup -} pairs), the combination of high Al{sub 2}O{sub 3} and Na{sub 2}O can lead to the formation of nepheline (NaAlSiO{sub 4}). Given the projected high concentration of Al{sub 2}O{sub 3} in SB4 and the potential use of a high Na{sub 2}O based glass (as a result of the use of a high Na{sub 2}O frit and/or a less washed sludge) to improve melt rate, the potential formation of nepheline in various SB4 systems is being assessed. Li et al. (2003) indicate that sodium alumino-borosilicate glasses are prone to nepheline crystallization if their compositions projected on the Na{sub 2}O-Al{sub 2}O{sub 3}-SiO{sub 2} ternary fall within the nepheline primary phase field. In particular, durable glasses with SiO{sub 2}/(SiO{sub 2}+Na{sub 2}O+ Al{sub 2}O{sub 3}) > 0.62, where the oxides are expressed as mass fractions in the glass, do not precipitate nepheline as their primary phase. Twelve SB4-based glasses have been identified or classified as ''prone to nepheline formation'' using a ''less conservative'' discriminator value of 0.65. Ten of the 12 glasses are Frit 320 based, and 8 of these 10 target a 40% WL-independent of the SB4 blending scenario used. This is not unexpected due to the higher alkali content of Frit 320 (12% Na{sub 2}O) relative to Frit 418 (8% Na{sub 2}O) and the fact that as WLs increase, the Na{sub 2}O and Al{sub 2}O{sub 3} concentrations increase and the SiO{sub 2} concentrations decrease in this series of glasses. Using the ''less conservative'' value as a guide will not only increase the probability of forming nepheline but will also allow the assessment of several different blending scenarios, both frits, and different WLs which will provide valuable insight into the frit selection process for SB4. More specifically, blending strategies, frit compositions, and WLs that avoid nepheline formation could be used to guide the frit selection process or to make compositional adjustments to the frit. The durability of these 12 glasses (of both quenched and centerline canister cooled versions) will be measured with the results being documented in a subsequent report.

PEELER, D

2005-04-01T23:59:59.000Z

212

Decommissioning samples from the Ft. Lewis, WA, solvent refined coal pilot plant: chemical analysis and biological testing  

SciTech Connect (OSTI)

This report presents the results from chemical analyses and limited biological assays of three sets of samples from the Ft. Lewis, WA solvent refined coal (SRC) pilot plant. The samples were collected during the process of decommissioning this facility. Chemical composition was determined for chemical class fractions of the samples by using high-resolution gas chromatography (GC), high-resolution GC/mass spectrometry (MS) and high-resolution MS. Biological activity was measuring using both the histidine reversion microbial mutagenicity assay with Salmonella typhimurium, TA98 and an initiation/promotion mouse-skin tumorigenicity assay. 19 refs., 7 figs., 27 tabs.

Weimer, W.C.; Wright, C.W.

1985-10-01T23:59:59.000Z

213

Effects of Bi doping on the thermoelectric properties of ? -Zn 4 Sb 3  

Science Journals Connector (OSTI)

The thermoelectricproperties of Bi-doped compounds ( Zn 1 ? x Bi x ) 4 Sb 3 ( x = 0 0.0025 0.005 0.01 ) were studied experimentally as well as theoretically. The results indicate that low-temperature ( T 9975 Bi 0.0025 ) 4 Sb 3 reduces remarkably as compared with that of Zn 4 Sb 3 due to enhanced phonon scattering of impurity (dopant).Electrical resistivity and Seebeck coefficient increase monotonically with increase in the Bi content resulting mainly from decrease in carrier concentration. Moreover first-principle calculations were performed on the occupation options of Bi atoms in ? -Zn 4 Sb 3 which show that Bi will preferentially occupy the Zn sites and not Sb sites and act as donors being consistent with the experimental observations. In addition the lightly doped compound ( Zn 0.9975 Bi 0.0025 ) 4 Sb 3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient whose figure of merit Z T is about 1.5 times larger than that of ? -Zn 4 Sb 3 at 300 K.

X. Y. Qin; M. Liu; L. Pan; H. X. Xin; J. H. Sun; Q. Q. Wang

2011-01-01T23:59:59.000Z

214

Energy level spectroscopy of InSb quantum wells using quantum-well LED emission  

Science Journals Connector (OSTI)

We have investigated the low-temperature optical properties of InSb quantum-well (QW) light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al0.143In0.857Sb, QW2 had a 40 nm undoped InSb well with a barrier composition of Al0.077In0.923Sb, and QW3 had a 100 nm undoped InSb well with a barrier composition of Al0.025In0.975Sb. For QW1, the signature of two transitions (CB1-HH1 and CB1-HH2) can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k.p calculation of the band structure together with a first-order time-dependent perturbation method (Fermi golden rule) calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of forbidden transitions, and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

T. G. Tenev; A. Palyi; B. I. Mirza; G. R. Nash; M. Fearn; S. J. Smith; L. Buckle; M. T. Emeny; T. Ashley; J. H. Jefferson; C. J. Lambert

2009-02-02T23:59:59.000Z

215

Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses  

E-Print Network [OSTI]

intensity of Ac 2. 00 gauss. cm. lrn(&(l'1)) for lnSb for a field intensity of A&i ? 2. 23 gauss cm. Im(e(E)) for InSb for a field intensity of A&i -- 2. 40 gauss cm. hn(e(E)) for InSb for a field intensity of A&i 2. 82 gauss cm. Im(&(E)) for InSb for a...-correlation function for InSb for a field intcnsit, y of Ac ? 2. 00 gauss cin. 21 Tiiiic. cvoluti&m of thc pair-correlation function for lnSb for a field intensity of As = 2. 46 gauss cm. 44 Time evolution of the pair-correlation function for InSb for a field...

Burzo, Andrea Mihaela

2001-01-01T23:59:59.000Z

216

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

217

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

W.A. W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project Final Environmental Impact Statement Summary February 2013 DOE/EIS-0473 Office of Fossil Energy National Energy Technology Laboratory INTENTIONALLY LEFT BLANK COVER SHEET Responsible Federal Agency: U.S. Department of Energy (DOE) Title: W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473) Location: Southeastern Texas, including Fort Bend, Wharton, and Jackson counties Contacts: For further information about this Environmental Impact Statement, contact: For general information on the DOE process for implementing the National Environmental Policy Act, contact: Mark W. Lusk U.S. Department of Energy National Energy Technology Laboratory 3610 Collins Ferry Road Morgantown, WV 26507-0880 (304) 285-4145 or Mark.Lusk@netl.doe.gov

218

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

NRG W.A. PARISH PCCS PROJECT NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT APPENDIX H BEG MODELING REPORT DOE/EIS-0473 NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT INTENTIONALLY LEFT BLANK 1 Reservoir modeling and simulation for estimating migration extents of injectate-CO 2 in support of West Ranch oilfield NEPA/EIS Gulf Coast Carbon Center, Bureau of Economic Geology, Jackson School of Geosciences, The University of Texas at Austin May 4, 2012 Summary It is anticipated that anthropogenic carbon dioxide (CO2-A) will be injected into the deep (5,000-6,000 ft below sea level) subsurface for enhanced oil recovery (EOR) at the West Ranch oilfield beginning in early 2015. The purpose of this report is to present reservoir modeling and simulation

219

Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes  

SciTech Connect (OSTI)

InAs/InAs{sub 0.88}Sb{sub 0.12}/InAs{sub 0.50}Sb{sub 0.20}P{sub 0.30} heterostructure photodiodes operating at room temperature in the spectral range 1-4.8 {mu}m are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispheres on the rearside of the photodiode chip leads to an increase in the quantum sensitivity of the photodiodes by a factor of 1.5-1.7 at wavelengths in the range 2.2-4.8 {mu}m. At an exposed photodiode area of 0.9 mm{sup 2} and a p-n junction area of 0.15 mm{sup 2}, a zero-bias differential resistance of 30 {Omega} and a quantum sensitivity of 0.24 electron/photon at a wavelength of 3 {mu}m are obtained. The operation of a photodiode with re-reflection of the photon flux in the crystal due to reflection from the curvilinear surface of the rearside of the photodiode chip is theoretically analyzed. The possibility of effective conversion of the re-reflected flux of photons into a photocurrent, with a simultaneous decrease in the p-n junction area, is demonstrated. An increase in the quantum sensitivity in the short-wavelength spectral range 1-2.2 {mu}m by 35% relative to the calculated data is observed, which is probably due to impact ionization in the narrow-gap active region.

Imenkov, A. N.; Grebenshchikova, E. A., E-mail: eagr.iropt7@mail.ioffe.ru; Starostenko, D. A.; Sherstnev, V. V.; Konovalov, G. G.; Andreev, I. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-05-15T23:59:59.000Z

220

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

The tin impurity in Bi0.5Sb1.5Te3 alloys  

Broader source: Energy.gov [DOE]

Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

222

Structural and Magnetic Properties of Co-Mn-Sb Thin films  

SciTech Connect (OSTI)

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

2009-12-17T23:59:59.000Z

223

Structural transformation of Sb-based high-speed phase-change material  

Science Journals Connector (OSTI)

On heating, amorphous Ag3.1In3.7Sb76.4Te16.5 crystallizes at 416 K in an A7 structure type with atomic sites randomly occupied by the four constituent elements. At 545 K the compound decomposes into two crystalline phases: AgInTe2 is stable up to the melting point, while Sb89Te11 has a modulated layer structure with a temperature-dependent layer period.

Matsunaga, T.

2012-10-23T23:59:59.000Z

224

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect (OSTI)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4??3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

225

Corinna Cisneros, S.M. Golam Mortuza, and Soumik Banerjee School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99163  

E-Print Network [OSTI]

Engineering, Washington State University, Pullman, WA 99163 Organic Photovoltaic Solar Cells: A Molecular of fossil fuel resources has lead to global energy crisis with an increasing effort in the scientific community to develop renewable energy technologies. Solar cell technology has generated significant

Collins, Gary S.

226

Proc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169184. Selecting Tests and Identifying Test Coverage Requirements for  

E-Print Network [OSTI]

of structural coverage crite­ ria. Our technique partitions an existing test suite into two subsets: testsProc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169­184. Selecting Tests and Identifying Test Coverage Requirements for Modified Software* Gregg Rothermel and Mary

Rothermel, Gregg

227

JOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF LIQUID Ge-Sb AND Pb-Sb ALLOYS  

E-Print Network [OSTI]

Fig. 1. v Electrical resistivity of liquid Pbl-x~bx alloys as a function of temperature. the liquid were quoted as dt%Sb Fig. 2. - Electrical resistivity of liquid Pb-Sb alloys at 660°C and Ge-Sb alloysJOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL

Boyer, Edmond

228

Beta-Decay Matrix Elements in Sb122  

Science Journals Connector (OSTI)

An electronic computer has been used to investigate the six nuclear matrix elements which enter into the 2- to 2+ 1.40-MeV beta transition in the decay of Sb122. Data from beta-gamma angular correlation, beta-circularly polarized gamma angular correlation, nuclear orientation, and nuclear resonance experiments were used in this analysis. As a further aid, the Feenberg-Ahrens relations between certain of the nuclear matrix elements were employed to catalog the solutions and to simplify the search problem. In order to discover how the remaining ambiguity of these solutions could most easily be reduced, for each of the solutions calculations were made of the predicted results of all possible experiments on this beta transition. These calculations show how sufficient experimental data can be obtained to determine unambiguously all six nuclear matrix elements. In an appendix all the theoretical formulas which give the experimental observables for a first forbidden 2- to 2+ beta transition in terms of the nuclear matrix elements are summarized.

F. M. Pipkin; J. Sanderson; W. Weyhmann

1963-03-15T23:59:59.000Z

229

Oxidation resistant coatings for CoSb3  

Science Journals Connector (OSTI)

Doped cobalt antimonides are used as components of thermoelectric devices at temperatures not exceeding 450 C because of poor thermal and chemical stability. In absence of oxygen they degrade by sublimation of antimony while in air they easily oxidize to form volatile antimony oxides and non-volatile thick double oxide scales [1]. In both cases protective coatings are indispensable to ensure safe performance of thermoelectric devices over extended times. The most promising solution reported so far is a thick aerogel coating which practically stops antimony loss by sublimation. The assessment of coating effectiveness is generally based on thermogravimetric tests in vacuum so permeability of oxygen and protection from oxidation cannot be evaluated. The paper presents investigations on the development of protective coatings which would prevent oxidation of CoSb3. Two types of coatings were applied: magnetron sputtered Cr-Si thin layers [2] and thick enamel layers. Testing involved interrupted oxidation in air for 20-80 h at 500 C and 600 C. The Cr-Si thin layers appeared oxygen-tight at 500 C while the enamel layers - even at 600 C.

2012-01-01T23:59:59.000Z

230

PRELIMINARY FRIT DEVELOPMENT AND MELT RATE TESTING FOR SLUDGE BATCH 6 (SB6)  

SciTech Connect (OSTI)

The Liquid Waste Organization (LWO) provided the Savannah River National Laboratory (SRNL) with a Sludge Batch 6 (SB6) composition projection in March 2009. Based on this projection, frit development efforts were undertaken to gain insight into compositional effects on the predicted and measured properties of the glass waste form and to gain insight into frit components that may lead to improved melt rate for SB6-like compositions. A series of Sludge Batch 6 (SB6) based glasses was selected, fabricated and characterized in this study to better understand the ability of frit compositions to accommodate uncertainty in the projected SB6 composition. Acceptable glasses (compositions where the Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) predicted acceptable properties, good chemical durability was measured, and no detrimental nepheline crystallization was observed) can be made using Frit 418 with SB6 over a range of Na{sub 2}O and Al{sub 2}O{sub 3} concentrations. However, the ability to accommodate variation in the sludge composition limits the ability to utilize alternative frits for potential improvements in melt rate. Frit 535, which may offer improvements in melt rate due to its increased B2O3 concentration, produced acceptable glasses with the baseline SB6 composition at waste loadings of 34 and 42%. However, the PCCS MAR results showed that it is not as robust as Frit 418 in accommodating variation in the sludge composition. Preliminary melt rate testing was completed in the Melt Rate Furnace (MRF) with four candidate frits for SB6. These four frits were selected to evaluate the impacts of B{sub 2}O{sub 3} and Na{sub 2}O concentrations in the frit relative to those of Frit 418, although they are not necessarily candidates for SB6 vitrification. Higher concentrations of B{sub 2}O{sub 3} in the frit relative to that of Frit 418 appeared to improve melt rate. However, when a higher concentration of B{sub 2}O{sub 3} was coupled with a lower concentration of Na{sub 2}O relative to Frit 418, melt rate did not appear to improve. It is expected that a SB6 composition projection with less uncertainty will be received during analysis of the Tank 51 E-1 sample, which will be pulled after the completion of aluminum dissolution in August 2009. At that time, additional frit development work will be performed to seek improved melt rates while maintaining viable projected operating windows. This later work will ultimately lead to a frit recommendation for SB6.

Fox, K.; Miller, D.; Edwards, T.

2009-07-21T23:59:59.000Z

231

Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys  

E-Print Network [OSTI]

E*PCOS2009 Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te75.0Te17.7 (AIST). These represent two families used widely as phase change materials: pseudobinary and more flexible than those of Ag. Key words: Phase change materials, density functional calculations

232

Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy  

SciTech Connect (OSTI)

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1998-06-01T23:59:59.000Z

233

OMVPE growth and characterization of GaInAsSb for thermophotovoltaics  

SciTech Connect (OSTI)

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Charache, G.W.

1998-06-01T23:59:59.000Z

234

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect (OSTI)

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

235

Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun  

SciTech Connect (OSTI)

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

2011-09-01T23:59:59.000Z

236

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents [OSTI]

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Spahn, O.B.; Lear, K.L.

1998-03-10T23:59:59.000Z

237

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy  

SciTech Connect (OSTI)

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

238

Surface core-level shift of InSb(111)-22  

Science Journals Connector (OSTI)

Surface core-level photoemission of InSb(111)-22 was performed using a synchrotron radiation light source. There were two surface components of the In 4d core level. A higher binding component of In 4d is attributed to the surface In bonded to Sb atoms. The lower binding component with smaller intensity is due to the surface In cluster atoms. On the other hand, we were not able to observe any surface components in the Sb 4d core level. This puzzling behavior is interpreted with a different contribution of surface and bulk Madelung potential to the surface core-level shifts in relation with the atomic geometry. 1996 The American Physical Society.

Jeong Won Kim; Sehun Kim; Jae Myung Seo; Shin-ichiro Tanaka; Masao Kamada

1996-08-15T23:59:59.000Z

239

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization  

SciTech Connect (OSTI)

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

Cervera, C.; Rodriguez, J. B.; Perez, J. P.; Aiet-Kaci, H.; Chaghi, R.; Christol, P. [Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France); Konczewicz, L.; Contreras, S. [Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

2009-08-01T23:59:59.000Z

240

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Synthesis and Characterization of Ag-or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route  

E-Print Network [OSTI]

Synthesis and Characterization of Ag- or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route Oleg Stefan Cel Mare BouleVard, MD-2004 Chisinau, Republic of MoldoVa, AdVanced Materials Processing ZnO nanorods doped with Ag and Sb have been synthesized by a facile hydrothermal technique. Crystal

Kik, Pieter

242

Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses  

SciTech Connect (OSTI)

The Department of Energy Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft Excel spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

2013-04-30T23:59:59.000Z

243

Genomic and Transcriptomic Analyses of the Facultative Methanotroph Methylocystis sp. Strain SB2 Grown on Methane or Ethanol  

Science Journals Connector (OSTI)

...Methylocystis sp. Strain SB2 Grown on Methane or Ethanol Alexey Vorobev a Sheeja Jagadevan a Sunit...cultures grown with either methane or ethanol. Evidence for use of the canonical methane...Methylocystis sp. strain SB2 grown with ethanol compared to methane revealed that on ethanol...

Alexey Vorobev; Sheeja Jagadevan; Sunit Jain; Karthik Anantharaman; Gregory J. Dick; Stphane Vuilleumier; Jeremy D. Semrau

2014-03-07T23:59:59.000Z

244

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect (OSTI)

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Flt, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zrich, 8093 Zrich (Switzerland)] [Laboratory for Solid State Physics, ETH Zrich, 8093 Zrich (Switzerland)

2013-09-09T23:59:59.000Z

245

JOURNAL DE PHYSIQUE Colloque Cl, supplment au no 1 , Tome 35, Janvier 1974, page Cl-43 TUDE DES STRUCTURES MAGNTIQUES DE CeSb ET GdSb  

E-Print Network [OSTI]

champ hyperfin transféré (H,,,) au site du noyau de I'ion non magnétique (l'ion Sb dans le cas présent noyau de I'ion non iiiagnétique est nul si l'ordre magnétique est du type I I ; il est différent de zéro

Boyer, Edmond

246

Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers  

E-Print Network [OSTI]

The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

Keller, Ursula

247

Electrical and thermoelectric properties of 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} single crystals doped with SbI{sub 3}  

SciTech Connect (OSTI)

Bi{sub 2}Te{sub 3}-Sb{sub 2}Te{sub 3}-Sb{sub 2}Se{sub 3} alloys with Sb{sub 2}Te{sub 3} and Sb{sub 2}Se{sub 3} contents up to 10 mol%, e.g., the 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloy, are among the best n-type thermoelectric materials for Peltier coolers used near room temperature. In this work, the electrical and thermoelectric properties of Sbl{sub 3}doped 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloys were characterized at temperatures ranging from 80K to 600K. The temperature dependencies of the Hall coefficient, carrier mobility, Seebeck coefficient and thermal conductivity were measured, and the scattering parameter and bandgap energy were determined.

Hyun, D.B.; Hwang, J.S.; Shim, J.D.; Kolomoets, N.V. [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals] [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals; Oh, T.S. [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science] [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science

1998-12-04T23:59:59.000Z

248

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations by operando-XRD and Mossbauer techniques  

E-Print Network [OSTI]

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations We report the electrochemical study of TiSnSb towards Li, as a negative electrode for Li-ion batteries. TiSnSb can reversibly take up more than 5 lithiums per formula unit leading to reversible

Boyer, Edmond

249

Jasmine R. Scott1, Nathan Tarlyn2, Amit Dhingra2 and Kate Evans2 1Fort Valley State University, GA and 2Department of Horticulture, Washington State University, WA  

E-Print Network [OSTI]

and 2Department of Horticulture, Washington State University, WA Time travel with apples: Can you see on selection media in the dark. After a week, cultures were moved to the light to induce shoot development

Collins, Gary S.

250

A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells  

SciTech Connect (OSTI)

Heterojunction n-Al{sub 0.25}Ga{sub 0.75}As{sub 0.02}Sb{sub 098}/p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 {micro}m to 2.1 {micro}m these cells, as well as homojunction n-p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96}is longer than 10 ns. Keeping the same internal efficiency as homojunction cells, hetero-cells provide a unique opportunity to decrease the dark forward current and thereby increase open circuit voltage (V{sub {proportional_to}}) and fill factor at a given illumination level. It is shown that the decrease of the forward current in hetero-cells is due to the lower recombination rate in n-type wider-bandgap space-charge region and to the suppression of the hole component of the forward current. The improvement in V{sub {proportional_to}} reaches 100% at illumination level equivalent to 1 mA/cm{sup 2} and it decreases to 5% at the highest illumination levels (2--3 A/cm{sup 2}), where the electron current component dominates in both the homo- and heterojunction cells. Values of V{sub {proportional_to}} as high as 310 meV have been obtained for a hetero-cell at illumination levels of 3 A/cm{sup 2}. Under this condition, the expected fill factor value is about 72% for a hetero-cell with improved series resistance. The heterojunction concept provides excellent prospects for further reduction of the dark forward current in TPV cells.

Garbuzov, D.Z.; Martinelli, R.U.; Khalfin, V.; Lee, H.; Morris, N.A.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States); Charache, G.W.; DePoy, D.M. [Lockheed-Martin, Inc., Schenectady, NY (United States)

1997-10-01T23:59:59.000Z

251

Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun  

SciTech Connect (OSTI)

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

2011-03-01T23:59:59.000Z

252

Thermophotovoltaic furnacegenerator for the home using low bandgap GaSb cells  

Science Journals Connector (OSTI)

It is well known that distributed combined heat and power (CHP) systems for commercial and industrial buildings are economically desirable because they conserve energy. Here, a thermophotovoltaic (TPV) unit is described that brings CHP into the home providing both heat and electric power by replacing the typical home heating furnace with a combined TPV furnacegenerator. First, the design of a 1.5 kWelectric/12.2 kWthermal TPV furnacegenerator is described along with the key components that make it possible. Diffused junction GaSb cells are one of these key components. Secondly, an economic cost target is determined for this system where the cost of the photovoltaic array will be key to the economical implementation of this concept. Finally, it is argued that the GaSb cells and arrays can be manufactured at the required low cost. The cost target can be reached because the GaSb cells in the TPV furnacegenerator can produce an electrical power density of 1 W cm?2 which is 100 times higher than the typical solar cell. The cost target can also be reached because the GaSb cell fabrication process parallels the silicon solar cell process where no toxic gases are used, no wafer polish is required and cast polycrystalline cells can be used.

L M Fraas; J E Avery; H X Huang

2003-01-01T23:59:59.000Z

253

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

254

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect (OSTI)

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

255

Semimetallic antiferromagnetism in the half-Heusler compound CuMnSb Ruben Weht,2  

E-Print Network [OSTI]

CuMnSb, the first antiferromagnet AFM in the Mn-based class of Heuslers and half-Heuslers that contains several conventional and half metallic ferromagnets, shows a peculiar stability of its magnetic order in high magnetic fields. Density functional based studies reveal an unusual nature of its unstable

Pickett, Warren

256

Colorado State Forest Service SB09-020 --Responsibility for Responding to Wildland Fires  

E-Print Network [OSTI]

SB09-020 clarifies the roles and responsibilities of fire protection districts, county sheriffs and responsibilities progressively from local jurisdiction to fire protection district jurisdiction to county: · The fire chief of the fire protection district is responsible for all fires, including wildland fires

257

Ambipolar Field Effect in Sb-Doped Bi2Se3 Nanoplates by Solvothermal Synthesis  

E-Print Network [OSTI]

ranging from electronics to energy conversion. Despite much exciting progress in the field, high and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025. The carrier concentration of these Bi2Se3 nanoplates is controlled by compensational Sb doping during

Cui, Yi

258

Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation  

E-Print Network [OSTI]

recrystallization and causes the development of a bimodal microstructure consisting of fine grains (5-30 micron) and coarse grains (50-300 micron). ECAE processing of homogenizied Bi-Sb alloy causes grain refinement and produces a more uniform microstructure...

Im, Jae-taek

2009-05-15T23:59:59.000Z

259

Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces  

SciTech Connect (OSTI)

A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530C to 560C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

Krishnaswami, Kannan; Shivashankar, Vangala; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

2008-04-01T23:59:59.000Z

260

Study of interatomic potential and thermal structural properties of ?-Zn{sub 4}Sb{sub 3}  

SciTech Connect (OSTI)

Highlights: ? The multi-body interatomic potentials of various models of ?-Zn{sub 4}Sb{sub 3} have been developed to describe atomic interactions. ? The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of ?-Zn{sub 4}Sb{sub 3}. ? The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in ?-Zn{sub 4}Sb{sub 3} may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of ?-Zn{sub 4}Sb{sub 3} by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of ?-Zn{sub 4}Sb{sub 3} and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of ?-Zn{sub 4}Sb{sub 3} is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of ?-Zn{sub 4}Sb{sub 3}, and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

Li, Guodong [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Li, Yao, E-mail: liyao06@126.com [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

Where Does My Drinking Water Come From? Where Does My Drinking Water Come From? Riverton, Wyoming, Processing Site F A C T S H E E T ENERGY Legacy Management U.S. DEPARTMENT OF This fact sheet provides information about the Alternative Water Supply System and domestic wells at the Uranium Mill Tailings Radiation Control Act of 1978 Title I processing site at Riverton, Wyoming. The Riverton site is managed by the U.S. Department of Energy Office of Legacy Management. Where Is the Riverton Site? The former Riverton, Wyoming, Processing Site is in Fremont County, 2 miles southwest of the town of Riverton and within the boundaries of the Wind River Indian Reservation (Northern Arapaho and Eastern Shoshone). Why Is It a "Site"? A uranium- and vanadium-ore-processing mill operated on the property from 1958 to 1963. Milling operations created

262

SEATTLE, WA ctober 1974  

E-Print Network [OSTI]

nektol n t"c C08 ul \\.\\ t,,.. !" \\ tIn4 UVt'r I I d (l E riltal Inl \\\\ashmptcn, sprl .. lnti ill )f If

263

Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys  

SciTech Connect (OSTI)

Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

Malik, K.; Das, Diptasikha [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)] [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Bandyopadhyay, S.; Banerjee, Aritra, E-mail: arbphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India) [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 (India); Mandal, P.; Srihari, Velaga [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)] [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Deb, A. K. [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)] [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)

2013-12-09T23:59:59.000Z

264

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect (OSTI)

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

265

Influence of N-doping on the thermal stability and switching speed of Zn15Sb85 phase change material  

Science Journals Connector (OSTI)

The phase change characteristics of nitrogen doping Zn15Sb85 thin films were investigated by in situ film resistance measurements. The crystallization temperature and activation energy for crystallization of thin...

Xiaoqin Zhu; Yifeng Hu; Hua Zou

2014-11-01T23:59:59.000Z

266

Rujevac Sb-Pb-Zn-As polymetallic deposit, Boranja orefield, Western Serbia: native arsenic and arsenic mineralization  

Science Journals Connector (OSTI)

Rujevac is a low-temperature hydrothermal polymetallic Sb-Pb-Zn-As vein-type ore deposit, hosted within a volcanogenic-sedimentary zone situated in the Rujevac-Crvene Stene-Brezovica Diabase-Chert Formation (D...

Slobodan A. Radosavljevi?; Jovica N. Stojanovi?

2014-02-01T23:59:59.000Z

267

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study  

SciTech Connect (OSTI)

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

Kim, Honggyu; Meng Yifei; Zuo Jianmin [Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States); Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Rouviere, Jean-Luc [CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble (France); Isheim, Dieter; Seidman, David N. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Northwestern University Center for Atom-Probe Tomography (NUCAPT), Northwestern University, Evanston, Illinois 60208 (United States)

2013-03-14T23:59:59.000Z

268

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

269

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)  

SciTech Connect (OSTI)

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60 dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2013-09-14T23:59:59.000Z

270

E v e n t s & T o p i c s i n R e n e wa b l e E n...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

271

Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material  

E-Print Network [OSTI]

.1063/1.3657139 Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials J. Chem. Phys on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material Shinya Hosokawa,1,2,a) Wolf change material Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Höhle, Daniel Szubrin, Nathalie Boudet

Paris-Sud XI, Université de

272

Nanodopant-Induced Band Modulation in AgPbmSbTe2+m-Type Nanocomposites  

SciTech Connect (OSTI)

We elucidate the fundamental physics of nanoscale dopants in narrow band-gap thermoelectric nanocomposites XPbmYTe2+m (X=Ag,Na; Y=Sb,Bi) using first-principles calculations. Our re- sults unveil distinct band-structure modulations, most notably a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off at the conduction band minimum caused by the spin-orbit interaction of the dopant Sb or Bi atoms. Boltzmann transport calculations demon- strate that these band modulations have significant but competing effects on high-temperature elec- tron transport behavior. These results offer insights for understanding recent experimental findings and suggest principles for optimizing thermoelectric properties of narrow band-gap semiconductors.

Zhang, Yi [University of Nevada, Las Vegas; Ke, Xuezhi [University of Nevada, Las Vegas; Chen, Changfeng [University of Nevada, Las Vegas; Yang, Jihui [General Motors Corporation-R& D; Kent, Paul R [ORNL

2011-01-01T23:59:59.000Z

273

Doping dependence of thermoelectric performance in Mo3Sb7: first principles calculations  

SciTech Connect (OSTI)

We study the effects of doping Mo3Sb7 with transition metals (Ni,Fe,Co,Ru) via first principles calculations, including electronic structure, lattice dynamics and Boltzmann transport. We find heavy-mass bands and large, rapidly varying density-of-states, generally favorable for high thermopower, near the band gap of this material. Transport calculations predict large Seebeck coefficients exceeding 300 $\\mu$V/K in a wide temperature range above 500 K (a range suitable for waste heat recovery), if the material can be doped into a semiconducting state. These thermopowers are much higher than those that have previously been experimentally observed; we find that performance exceeding current limits may be found at lower carrier concentration than achieved presently. We also discuss the selection of dopant and the potential thermoelectric performance of optimally doped Mo3Sb7.

Singh, David J [ORNL; Parker, David S [ORNL; Du, Mao-Hua [ORNL

2011-01-01T23:59:59.000Z

274

Sb-free quantum cascade lasers in the 34 ?m spectral range  

Science Journals Connector (OSTI)

In this work, the design and implementation of Sb-free short wavelength strain-compensated quantum cascade lasers in the 34 ?m spectral range is presented. Due to the presence of highly strained AlAs-barrier layers, the optimization of the epitaxial growth process is firstly discussed. The used active region design is then presented together with the observed laser performance. Watt-level room temperature emission at 3.3 ?m is shown for FabryPerot devices and laser operation in pulsed mode is observed above 350 K. The laser performance is comparable with Sb-containing quantum cascade lasers. Spectral tuning of the lasers in an external cavity configuration over more than 275 cm?1 is achieved with an emission wavelength as short as 3.15 ?m. For the first time in this spectral range, results on single-mode buried heterostructure distributed feedback lasers are shown.

A Bismuto; S Riedi; B Hinkov; M Beck; J Faist

2012-01-01T23:59:59.000Z

275

Optical nonlinear absorption characteristics of Sb{sub 2}Se{sub 3} nanoparticles  

SciTech Connect (OSTI)

In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb{sub 2}Se{sub 3}) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb{sub 2}Se{sub 3} nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

Muralikrishna, Molli, E-mail: muralikrishnamolli@sssihl.edu.in; Kiran, Aditha Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Ravikanth, B., E-mail: muralikrishnamolli@sssihl.edu.in; Sowmendran, P., E-mail: muralikrishnamolli@sssihl.edu.in; Muthukumar, V. Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Venkataramaniah, Kamisetti, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

2014-04-24T23:59:59.000Z

276

Abundance analysis of SB2 binary stars with HgMn primaries  

E-Print Network [OSTI]

We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

T. Ryabchikova

1998-05-06T23:59:59.000Z

277

Electric power production using new GaSb photovoltaic cells with extended infrared response  

Science Journals Connector (OSTI)

New GaSb photovoltaic cells with infrared response extended out to 1.8 microns are well matched to hydrocarbon combustion heated silicon carbide infrared emitters operating at 1600 C. Power densities of up to 10 Watts/cm2 promise to make thermophotovoltaic generation of electricity economical. These continuous combustion thermophotovoltaic units run quietly and cleanly. Applications include small scale distributed cogeneration of heat and electricity and power units for clean electric vehicles.

Lewis Fraas; Russell Ballantyne; John Samaras; Michael Seal

1995-01-01T23:59:59.000Z

278

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

279

States in Sb126 populated in the ? decay of 105-yr Sn126  

Science Journals Connector (OSTI)

The low-energy level structure of the odd-odd nucleus Sb126 has been investigated by studying the radioactive decay of 105-yr Sn126, using Ge(Li) and Si(Li) detectors. Based on conversion-electron and ?-ray singles data, ?-? and ?-e- prompt and delayed coincidence measurements, and complementary ?-ray energy and intensity balance arguments, a decay scheme for Sn126 has been deduced which accommodates all of the observed ?-ray transitions. The energies (keV), spins, and parities of the levels established in Sb126 are as follows: 0.0 [8-], 17.7 [5+], 40.4 [3-], 83.1 [4-, (3-)], 104.7 [3+], and 128.0 [2+]. The respective half-lives of these six states are: 12.4 day, 19.0 min, ?11 s, 5.1 ns, 553 ns, and 78.0 ns, the latter four values having been determined in the present investigation. The level assignments are discussed within the framework of the single-particle shell model and in relation to the proposed assignments of low-lying energy levels of neighboring odd-odd antimony isotopes.RADIOACTIVITY Sn126 [from U235(n,f)]; measured E?, I?, Ice, ?-?, ?-?, and e-? coin, level T12's; deduced ICC, ? multipolarities, Sb126 levels, J, ?; calculated ?-hindrance factors. Ge(Li), Si(Li) detectors; mass-separated source.

H. A. Smith; Jr.; M. E. Bunker; J. W. Starner; C. J. Orth; K. E. G. Lbner

1976-01-01T23:59:59.000Z

280

STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN  

Broader source: Energy.gov (indexed) [DOE]

STATEM!NT''OF CONSIDEAAT10NS STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN DOE PROPOSAL NO.OE-EE0000412 W(A} 2009-:060 The OhlipC1'!ve of this project Is the and comt'nercialization of a two-phase soluttofrfQf USe with The 1 lM,C'l_""""P H'tn(;lPI'" PJJ1'l.nn""". refrig1':'rant tooling solution provides certain improvements compared to conventional air-<:ooling syslems and water-cooling systems, The totalantfetpated cost the is $901,678 with the Petitl(};l)er approximately 19.% cost sm:tre, $262,191. Thiswaive(is contingent upo.n the Petitioner rrH~intaining the foregoing cost over tneCQUfse the grant As in its wai'\l\;f petition, the ~etitfoner isa leading global supplier of air conditioning and

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

RHEOLOGICAL AND ELEMENTAL ANALYSES OF SIMULANT SB5 SLURRY MIX EVAPORATOR-MELTER FEED TANK SLURRIES  

SciTech Connect (OSTI)

The Defense Waste Processing Facility (DWPF) will complete Sludge Batch 5 (SB5) processing in fiscal year 2010. DWPF has experienced multiple feed stoppages for the SB5 Melter Feed Tank (MFT) due to clogs. Melter throughput is decreased not only due to the feed stoppage, but also because dilution of the feed by addition of prime water (about 60 gallons), which is required to restart the MFT pump. SB5 conditions are different from previous batches in one respect: pH of the Slurry Mix Evaporator (SME) product (9 for SB5 vs. 7 for SB4). Since a higher pH could cause gel formation, due in part to greater leaching from the glass frit into the supernate, SRNL studies were undertaken to check this hypothesis. The clogging issue is addressed by this simulant work, requested via a technical task request from DWPF. The experiments were conducted at Aiken County Technology Laboratory (ACTL) wherein a non-radioactive simulant consisting of SB5 Sludge Receipt and Adjustment Tank (SRAT) product simulant and frit was subjected to a 30 hour SME cycle at two different pH levels, 7.5 and 10; the boiling was completed over a period of six days. Rheology and supernate elemental composition measurements were conducted. The caustic run exhibited foaming once, after 30 minutes of boiling. It was expected that caustic boiling would exhibit a greater leaching rate, which could cause formation of sodium aluminosilicate and would allow gel formation to increase the thickness of the simulant. Xray Diffraction (XRD) measurements of the simulant did not detect crystalline sodium aluminosilicate, a possible gel formation species. Instead, it was observed that caustic conditions, but not necessarily boiling time, induced greater thickness, but lowered the leach rate. Leaching consists of the formation of metal hydroxides from the oxides, formation of boric acid from the boron oxide, and dissolution of SiO{sub 2}, the major frit component. It is likely that the observed precipitation of Mg(OH){sub 2} and Mn(OH){sub 2} caused the increase in yield stress. The low pH run exhibited as much as an order of magnitude greater B and Li (frit components) leachate concentrations in the supernate. At high pH a decrease of B leaching was found and this was attributed to adsorption onto Mg(OH){sub 2}. A second leaching experiment was performed without any sludge to deconvolute the leach rate behavior of Frit 418 from those of the SB5 sludge-Frit 418 system. At high pH, the sludgeless system demonstrated very fast leaching of all the frit components, primarily due to fast dissolution of the main component, silica, by hydroxide anion; various semiconductor studies have established this reactivity. Overall, the frit-water system exhibited greater leaching from a factor two to almost three orders of magnitude (varying by conditions and species). The slower leaching of the sludge system is possibly due to a greater ionic strength or smaller driving force. Another possible reason is a physical effect, coating of the frit particles with sludge; this would increase the mass transfer resistance to leaching. Based on this study, the cause of clogs in the melter feed loop is still unknown. A possible explanation is that the SME product, like the simulant, is too thin and could contribute to a loss of two-phase flow which could cause plugging of a restricted and poorly mixed zone like the melter feed loop. This is feasible since a previous study of a slurry showed an increase in resistance to flow at lower flow rates. Testing with a radioactive SME sample is underway and should help understand this potential mechanism.

Fernandez, A.

2010-02-08T23:59:59.000Z

282

Switching of localized surface plasmon resonance of gold nanoparticles on a GeSbTe film mediated by nanoscale phase change and modification of surface morphology  

SciTech Connect (OSTI)

As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.

Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)] [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

2013-12-09T23:59:59.000Z

283

Effect of nanostructuring on the band structure and the galvanomagnetic properties in Bi{sub 1?x}Sb{sub x} alloys  

SciTech Connect (OSTI)

Magnetotransport measurements were performed on a series of nanostructured Bi{sub 1?x}Sb{sub x} alloy samples with an Sb content in the range between 0% and 60%. The samples were prepared by cold pressing and annealing of crystalline Bi{sub 1?x}Sb{sub x} nanoparticles, which were synthesized by mechanical alloying. The incorporation of Sb changes the band structure of these nanotextured alloys as well as their transport behavior. With increasing Sb content the band gap increases and reaches a maximum band gap of 42?meV at an Sb concentration of about 14% determined from temperature dependent resistivity measurements. For even higher Sb content, the band gap decreases again. The bands and thus the band gaps are shifted with respect to bulk material due to quantum confinement effects in the nanostructures. The change of the band structure with varying Sb content strongly affects the magnetoresistance behavior as well as the magnetic field dependence of the Hall-coefficient. Using a three band model in order to describe both properties, it was possible to determine the main band parameters of the nanostructured material as a function of the Sb content.

Will, C. H.; Elm, M. T., E-mail: matthias.elm@exp1.physik.uni-giessen.de; Klar, P. J. [Institute of Experimental Physics I, Justus-Liebig University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Landschreiber, B.; Gne?, E.; Schlecht, S. [Institute of Inorganic and Analytical Chemistry, Justus-Liebig University, Heinrich-Buff-Ring 58, D-35392 Giessen (Germany)

2013-11-21T23:59:59.000Z

284

Sb lattice diffusion in Si1-xGex/Si(001) heterostructures:?Chemical and stress effects  

Science Journals Connector (OSTI)

The Sb diffusion coefficient in Si1-xGex/Si1-yGey(001) heterostructures grown by molecular beam epitaxy (MBE) was measured for temperatures ranging from 700 to 850 C, Ge composition from 0 to 20 % and biaxial pressure from -0.8 (tension) to 1.4 GPa (compression). A quantitative separation of composition and biaxial stress effects is made. We show that the Sb lattice diffusion coefficient: (i) increases with Ge concentration in relaxed layers or at constant biaxial pressure and (ii) increases with compressive biaxial stress and decreases with tensile biaxial stress at constant Ge composition. The enhancement of Sb lattice diffusion in Si1-xGex layers in epitaxy on Si(001) is thus due to the cooperative effect of Ge composition and induced compressive biaxial stress. However, the first effect (composition) is predominant. The activation volume of Sb diffusion in Si1-xGex layers is deduced from the variation of the Sb diffusion coefficients with biaxial pressure. This volume is negative. The sign of the activation volume, its absolute value and its variation with temperature confirm the prediction of the thermodynamic model proposed by Aziz, namely, that under a biaxial stress the activation volume is reduced to the relaxation volume.

A. Portavoce; P. Gas; I. Berbezier; A. Ronda; J. S. Christensen; A. Yu. Kuznetsov; B. G. Svensson

2004-04-15T23:59:59.000Z

285

Phase change behaviors of Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect (OSTI)

Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change materials have been investigated for phase change memory applications. Zn{sub 15.16}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 84.84} phase change film exhibits a higher crystallization temperature ({approx}258 Degree-Sign C), wider band gap ({approx}0.78 eV), better data retention of 10 years at 167.5 Degree-Sign C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge{sub 2}Sb{sub 2}Te{sub 5}. The proper Zn atom added into Ge{sub 2}Sb{sub 2}Te{sub 5} serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Wang Guoxiang; Nie Qiuhua [Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Wang, R. P. [Laser Physics Centre, Australian National University, Canberra, ACT 0200 (Australia); Wu Liangcai [Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-07-30T23:59:59.000Z

286

Magnetic susceptibility of curium pnictides. [/sup 248/CmP, /sup 248/CmSb  

SciTech Connect (OSTI)

The magnetic susceptibility of microgram quantities of /sup 248/CmP and /sup 248/CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms.

Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

1981-09-01T23:59:59.000Z

287

Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices  

SciTech Connect (OSTI)

The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10?K revealed that the superlattice converted to p-type with Be-doping of 3 10{sup 16} cm{sup ?3} and the hole mobility reached 24400 cm{sup 2}/Vs. Photoresponse measurements at 10?K confirmed the 175?meV bandgap and material optical quality.

Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil; Mitchel, W. C.; Mou, Shin; Brown, G. J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)] [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States); Elhamri, S. [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)] [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)

2014-01-06T23:59:59.000Z

288

Normal-incidence Sb/B{sub 4}C multilayer mirrors for the 80 A < {lambda} < 120 A wavelength range  

SciTech Connect (OSTI)

Periodic and aperiodic Sb/B4C multilayer structures have been theoretically calculated and synthesised for the first time for the application in soft X-ray optics in the 80 A < {lambda} < 120 A range. The reflection spectra of the periodic multilayer mirrors are measured using synchrotron radiation and laser plasma-generated radiation. The experimental spectra are theoretically interpreted with the inclusion of transition layers and substrate roughness. The density of antimony layers is supposedly {rho}{sub (Sb)} = 6.0 g cm{sup -3}, and the thickness of transition layers (if any) in the Sb/B4C multilayer structures does not exceed 10 A. A peak reflectivity of 19 % is attained at a wavelength of 85 A. An aperiodic mirror optimised for maximum uniform reflectivity in the 100 - 120 A range is tested employing the laser plasma radiation source. (x-ray optics)

Vishnyakov, E A; Voronov, D L; Gullikson, E M; Kondratenko, V V; Kopylets, I A; Luginin, M S; Pirozhkov, A S; Ragozin, Evgenii N; Shatokhin, A N

2013-07-31T23:59:59.000Z

289

Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning  

SciTech Connect (OSTI)

Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

2012-03-15T23:59:59.000Z

290

Department of Political Science Box 353530 University of Washington Seattle, WA 98195-3530 phone: (206) 543-2780 fax: (206) 685-2146 www.polisci.washington.edu  

E-Print Network [OSTI]

Department of Political Science · Box 353530 · University of Washington · Seattle, WA 98195-3530 phone: (206) 543-2780 · fax: (206) 685-2146 · www.polisci.washington.edu Highlights Political science rating in the Princeton Review 2010 list of "great schools to study political science." The department

Anderson, Richard

291

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

292

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

293

Effect of Pressure and Chemical Substitutions on the Charge-Density-Wave in LaAgSb2  

SciTech Connect (OSTI)

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La{sub 1-x}R{sub x}AgSb{sub 2} (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb{sub 2} under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c/a ratio) prevailing in the latter case.

Budko,S.; Weiner, T.; Ribeiro, R.; Canfield, P.; Lee, Y.; Vogt, T.; Lacerda

2006-01-01T23:59:59.000Z

294

The Band Spectra of SbF and BiF  

Science Journals Connector (OSTI)

New band spectra attributed to the molecules SbF and BiF have been excited by active nitrogen. The spectrum of SbF from 2000-5500A is found to have three groups of bands lying in the regions 3600-5200A, 2600-2700A and 2200-2430A. Analysis of the first group shows that sixty-one bands out of sixty-nine can be placed into two systems with the following vibrational constants, in cm-1: System?e?e?xe??e??e??xe???e??A121887.5411.31.71616.92.89A223992.5420.01.75612.62.58 The second group consists of a few isolated bands degraded to shorter wave-lengths and the third of bands in closely spaced sequences and also degraded to shorter wave-lengths. A preliminary analysis indicates that the bands in the latter group can be placed into two systems for which ?e??700 cm-1, ?e???620 cm-1 and ??21?1850 cm-1. Three new systems of bands, degraded to shorter wave-lengths and forming a triplet system with wide multiplet separations, (7330 cm-1 and 4800 cm-1), are found in the spectrum of BiF at 3050-3250A, 2650-2850A and 2250-2350A. Photographs taken with small dispersion indicate that ?e??620 cm-1 and ?e???520 cm-1.

George D. Rochester

1937-03-15T23:59:59.000Z

295

SeZnSb alloy and its nano tubes, graphene composites properties  

SciTech Connect (OSTI)

Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se{sub 96}-Zn{sub 2}-Sb{sub 2} and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se{sub 96}-Zn{sub 2}-Sb{sub 2} alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D) have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80%) in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

Singh, Abhay Kumar [Department of Physics, Indian Institute of Physics, Bangalore-560012 (India)

2013-04-15T23:59:59.000Z

296

Synthesis and structural characterization of new dithiocarbamate complexes from Sb(III) and Bi(III)  

SciTech Connect (OSTI)

Twenty new antimony and bismuth dithiocarbamate complexes which employed ten different type of amines have been successfully synthesized. The synthesized complexes with metal to dithiocarbamate ratio at 1:3. Elemental analysis of the complexes gave the general formula of MCl[S{sub 2}CNRR]{sub 2} where M = Sb(III), Bi(III); R = methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, benzyl; R = ethanol, methyl, ethyl, propyl, isopropyl, cyclohexyl, benzyl. The complexes were analysed by IR and NMR spectroscopy. The crystal structure of five-coordinated antimony (III) complex have been determined by X-ray single crystal diffraction. Single crystal X-ray diffraction studies on SbCl[S{sub 2}CN(C{sub 4}H{sub 9})(C{sub 2}H{sub 5})]{sub 2} adopted a triclinic system with a space group P1 with a = 10.0141(8) , b = 10.1394(7) , c = 11.8665(9) , ? = 67.960, ? =87.616, ? = 80.172.

Jamaluddin, Nur Amirah; Baba, Ibrahim [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

2013-11-27T23:59:59.000Z

297

RELAP5 assessment using LSTF test data SB-CL-18  

SciTech Connect (OSTI)

A 5 % cold leg break test, run SB-CL-18, conducted at the Large Scale Test Facility (LSTF) was analyzed using the RELAP5/MOD2 Cycle 36.04 and the RELAP5/MOD3 Version 5m5 codes. The test SB-CL-18 was conducted with the main objective being the investigation of the thermal-hydraulic mechanisms responsible for the early core uncovery, including the manometric effect due to an asymmetric coolant holdup in the steam generator upflow and downflow side. The present analysis, carried out with the RELAP5/MOD2 and MOD3 codes, demonstrates the code`s capability to predict, with sufficient accuracy, the main phenomena occurring in the depressurization transient, both from a qualitative and quantitative point of view. Nevertheless, several differences regarding the evolution of phenomena and affecting the timing order have been pointed out in the base calculations. The sensitivity study on the break flow and the nodalization study in the components of the steam generator U-tubes and the cross-over legs were also carried out. The RELAP5/MOD3 calculation with the nodalization change resulted in good predictions of the major thermal-hydraulic phenomena and their timing order.

Lee, S.; Chung, B.D.; Kim, H.J. [Korea Inst. of Nuclear Safety, Taejon (Korea, Republic of)

1993-05-01T23:59:59.000Z

298

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices  

E-Print Network [OSTI]

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices G. A. Umana transport J. Appl. Phys. 112, 123715 (2012) Characteristics of built-in polarization potentials Appl. Phys. Lett. 101, 243113 (2012) Thermal stability of the deep ultraviolet emission from Al

Krishna, Sanjay

299

Conversion of Hydroperoxoantimonate Coated Graphenes to Sb2S3@Graphene for a Superior Lithium Battery Anode  

Science Journals Connector (OSTI)

Conversion of Hydroperoxoantimonate Coated Graphenes to Sb2S3@Graphene for a Superior Lithium Battery Anode ... We describe a method for conformal coating of reduced graphene oxide (rGO) by stibnite nanocrystallites. ... antimony sulfide; stibnite; reduced graphene oxide; lithium battery; sulfurization ...

Petr V. Prikhodchenko; Jenny Gun; Sergey Sladkevich; Alexey A. Mikhaylov; Ovadia Lev; Yee Yan Tay; Sudip K. Batabyal; Denis Y. W. Yu

2012-11-22T23:59:59.000Z

300

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation  

E-Print Network [OSTI]

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas- phase=pdfcov Published by the AIP Publishing Articles you may be interested in Nanoscale nuclei in phase change materials phase change material clusters made by gas-phase condensation G. E. Ghezzi,1,2 R. Morel,3 A. Brenac,3 N

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes  

E-Print Network [OSTI]

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes J. P superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage

Flatte, Michael E.

302

Alternative route for the preparation of CoSb{sub 3} and Mg{sub 2}Si derivatives  

SciTech Connect (OSTI)

An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb{sub 3} and magnesium in the case of Mg{sub 2}Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb{sub 3} (milling included) and Mg{sub 2}Si (no milling). (2) Micrographs of CoSb{sub 3} product. (3) Micrographs of Mg{sub 2}Si product. Highlights: Black-Right-Pointing-Pointer The combustion synthesis followed by HP was used for the manufacturing of CoSb{sub 3} or Mg{sub 2}Si. Black-Right-Pointing-Pointer The time of reaction is shorter compared with many other synthesis methods. Black-Right-Pointing-Pointer The process is scalable and practically wasteless.

Godlewska, E., E-mail: godlewsk@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland); Mars, K.; Zawadzka, K. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)

2012-09-15T23:59:59.000Z

303

Removal of Xenon and Radon from Contaminated Atmospheres with Dioxygenyl Hexafluoroantimonate, O2SbF6  

Science Journals Connector (OSTI)

... process gas, and the excess fluorine must be removed afterwards. I have shown that radon, the heaviest noble gas, can be collected by oxidation with liquid bromine trifluoride and ... ). I report here further experiments with a dioxygenyl salt, O2SbF6, which reacts with radon and xenon at 25 C and which appears very promising as a reagent for removing ...

L. STEIN

1973-05-04T23:59:59.000Z

304

SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL  

SciTech Connect (OSTI)

Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB7 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated.

Pareizs, J.; Hay, M.

2011-02-22T23:59:59.000Z

305

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect (OSTI)

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

306

Epitaxial growth and ferrimagnetic properties of Mn film on GaSb(100)  

SciTech Connect (OSTI)

We report on the epitaxial stabilization and magnetic properties of Mn films on GaSb(100) using molecular beam epitaxy, a follow-up to our previous work on the growth of Mn films on GaAs(100) [Phys. Rev. B 79, 045309 (2009)]. A strong ferrimagnetic ordering was observed which was attributed to the largely expanded lattice parameter resulting from the lattice mismatch with substrate and the enhanced thermal energy with increasing growth temperature. The observed magnetic moment of 1.16{mu}{sub B}/Mn atom was several times larger than that observed in the Mn/GaAs(100) films due to the lattice constant difference of substrates. The in-plane magnetoresistance behavior demonstrated the magnetic anisotropy that might result from the slightly distorted cubic structure of {alpha}-Mn phase under low-dimensional growth.

Feng Wuwei; Dung, Dang Duc; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Choi, Jeongyong [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of)

2010-05-15T23:59:59.000Z

307

Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.  

SciTech Connect (OSTI)

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

2010-08-01T23:59:59.000Z

308

Anisotropy of the fundamental absorption edge of TlSbS2  

Science Journals Connector (OSTI)

We have investigated, at pumped-liquid-helium temperature, the near-band-edge optical properties of the ternary layer compound TlSbS2. We resolve first a direct-band-gap exciton. A quantitative analysis of the data allows an accurate determination of the direct-band-gap energy E0=1.907 eV at 2 K. An anisotropic behavior is found, which depends on the direction of polarization of the incident light with respect to the triclinic axes which lie in the plane of the layer. Depending on the polarization, both E0 and the next threshold E1 have strongly different oscillator strengths. These results are discussed in the light of previous results for the monochalcogenide SnS.

P. Rouquette; J. Allegre; B. Gil; J. Camassel; H. Mathieu; A. Ibanez; J. C. Jumas

1986-03-15T23:59:59.000Z

309

Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass  

SciTech Connect (OSTI)

In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550C to 700C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

2014-04-24T23:59:59.000Z

310

Evaluation of electron mobility in InSb quantum wells by means of percentage-impact  

SciTech Connect (OSTI)

In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

2014-05-15T23:59:59.000Z

311

Electronic and optical properties of TiCoSb under different pressures  

SciTech Connect (OSTI)

The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

Xu Bin, E-mail: hnsqxb@163.com [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Zhang Jing [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Liang Jianchu [Department of electronic science, Huizhou University, Guangdong 516001 (China); Gao Guoying; Yi Lin [Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-08-15T23:59:59.000Z

312

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

313

Characterization of the environmental fate of Bacillus thuringiensis var. kaurstaki (Btk) after pest eradication efforts in Seattle, WA and Fairfax county, VA  

SciTech Connect (OSTI)

Understanding the fate of biological agents in the environment will be critical to recovery and restoration efforts after a biological attack. Los Alamos National Laboratory (LANL) is conducting experiments in the Seattle, WA and Fairfax County, VA areas to study agent fate in urban environments. As part of their gypsy moth suppression efforts, Washington State and Fairfax County have sprayed Bacillus thuringiensis var. kurstaki (Btk), a common organic pesticide for decades. Many of the spray zones have been in or near urban areas. LANL has collected surface and bulk samples from historical Seattle spray zones to characterize how long Btk persists at detectable levels in the environment, and how long it remains viable in different environmental matrices. This work will attempt to address three questions. First, how long does the agent remain viable at detectable levels? Second, what is the approximate magnitude and duration of resuspension? And third, does the agent transport into buildings? Data designed to address the first question will be presented. Preliminary results indicate Btk remains viable in the environment for at least two years.

Ticknor, Lawrence [Los Alamos National Laboratory; Van Cuyk, Sheila M [Los Alamos National Laboratory; Deshpande, Alina [Los Alamos National Laboratory; Omberg, Kristin M [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

314

Ion mobility and phase transitions in heptafluorodiantimonates(III) Cs(1?x)(NH4)xSb2F7 and K0.4Rb0.6Sb2F7 according to NMR and DSC data  

Science Journals Connector (OSTI)

Abstract Ion mobility and phase transitions in heptafluorodiantimonates(III) Cs1?x(NH4)xSb2F7 (x=0.2; 0.6) and K0.4Rb0.6Sb2F7 were studied by the 19F, 1H NMR and DSC. The character of ionic motions in fluoride and ammonium sublattices with temperature variations was investigated. Types of ion motions and temperature ranges in which they are observed were determined. It was found that the predominant form of ionic motions in high-temperature modifications is a diffusion of fluorine atoms, whereas the number of diffusing ammonium ions depends on the sample composition. The observed phase transitions in heptafluorodiantimonates(III) of cesiumammonium and potassiumrubidium with a formation of high-temperature modifications are transitions into a superionic state (?>10?3S/cm above 450K).

V.Ya. Kavun; M.M. Polyantsev; L.A. Zemnukhova; A.B. Slobodyuk; V.I. Sergienko

2014-01-01T23:59:59.000Z

315

Electronic and Transport Properties of Zintl Phase Ae2MgPn2, Ae=Ca,Sr,Ba, P n=As,Sb,Bi in relation to Mg3Sb2  

SciTech Connect (OSTI)

First principles calculations of the electronic structure and transport properties of Zintl phase Ae2MgP n2, Ae=Ca,Sr,Ba, P n=As,Sb,Bi compounds and Mg3Sb2 are reported. These are discussed in relation to the thermoelectric performance of the compounds and specifically the optimization of carrier concentration. It is found that there are several promising compositions and that the materials that have been studied to date are not fully optimized in terms of doping and may not ultimately be the best thermoelectrics in this family. We additionally report optical properties and show that there are significant differences among the compounds arising from differences in electronic structure and that these differences should be accessible to experiment. This provides a way to test the trends observed here.

Singh, David J [ORNL] [ORNL; Parker, David S [ORNL] [ORNL

2013-01-01T23:59:59.000Z

316

Small-sized Mach-Zehnder Interferometer Optical Switch Using Thin Film Ge2Sb2Te5 Phase-change Material  

Science Journals Connector (OSTI)

Small-sized Mach-Zehnder Interferometer optical switch using Ge2Sb2Te5 thin films was fabricated. Two thin films of 1-?m-square were sufficient for switching. The switching...

Moriyama, Takumi; Kawashima, Hitoshi; Kuwahara, Masashi; Wang, Xiaomin; Asakura, Hideaki; Tsuda, Hiroyuki

317

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films  

SciTech Connect (OSTI)

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal [Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)] [Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India); Gupta, M.; Deshpande, U. P. [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)] [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)

2013-08-12T23:59:59.000Z

318

Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy  

SciTech Connect (OSTI)

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Kleiman, R. N.; Preston, J. S. [Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

319

Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices  

SciTech Connect (OSTI)

Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

2014-06-21T23:59:59.000Z

320

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 C<~T<~550 C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Engineering study on TiSnSb-based composite negative electrode for Li-ion batteries  

Science Journals Connector (OSTI)

Abstract Micrometric TiSnSb is a promising negative electrode material for Li-ion batteries when formulated with carboxymethyl cellulose (CMC) binder and a mixture of carbon black and carbon nanofibers, and cycled in a fluoroethylene carbonate (FEC)-containing electrolyte. Here, other binder systems were evaluated, polyacrylic acid (PAAH) mixed with CMC, CMC in buffered solution at pH 3 and amylopectin. However CMC showed the better performance in terms of cycle life of the electrode. Whatever the binder, cycle life decreases with increasing the active mass loading, which is attributed to both the precipitation of liquid electrolyte degradation products and to the loss of electrical contacts within the composite electrode and with the current collector as a consequence of the active particles volume variations. Furthermore, calendaring the electrode unfortunately decreases the cycle life. The rate performance was studied as a function of the active mass loading and was shown to be determined by the electrode polarization resistance. Finally, full cells cycling tests with Li1Ni1/3Co1/3Mn1/3O2 at the positive electrode were done. 60% of the capacity is retained after 200 cycles at the surface capacity of 2.7mAhcm?2.

H.A. Wilhelm; C. Marino; A. Darwiche; P. Soudan; M. Morcrette; L. Monconduit; B. Lestriez

2015-01-01T23:59:59.000Z

322

SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL  

SciTech Connect (OSTI)

Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB6 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. The sample is the same as that on which the chemical composition was reported. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 99% of the Tc-99 and at least 90% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

Bannochie, C.; Bibler, N.; Diprete, D.

2010-05-21T23:59:59.000Z

323

Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems  

SciTech Connect (OSTI)

The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

Romaka, V.V., E-mail: romakav@yahoo.com [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Rogl, P. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Romaka, L.; Stadnyk, Yu. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N.; Grytsiv, A.; Falmbigl, M. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Skryabina, N. [Perm State University, Bukireva Str. 15, 614990 Perm (Russian Federation)

2013-01-15T23:59:59.000Z

324

Electrical resistance and magnetic properties of the neptunium monopnictides NpAs, NpSb, and NpBi at high pressures  

Science Journals Connector (OSTI)

We report on high-pressure studies performed on the neptunium pnictides NpAs and NpBi via electrical resistance up to ?25 GPa between 1.3 K and room temperature, and on a high-pressure investigation up to 9 GPa and at 4.2 K on NpSb using 237Np Mssbauer spectroscopy. This work extends previous high-pressure studies carried out on NpAs via Mssbauer spectroscopy, on NpSb via resistance, and on all pnictides via x-ray study. In NpX (X=As,Sb,Bi) crystallizing in the cubic-NaCl phase the ground state is antiferromagnetic and displays a noncollinear 3k spin structure. The strong increase of the resistivity with decreasing temperature observed in the temperature range of the 3k order at ambient pressure collapses at 0.23 (NpAs), 2.7 (NpSb), and 3.9 GPa (NpBi). No significant change of the hyperfine interactions is found in NpAs or NpSb at the pressure where the resistance collapse is observed. The Kondo anomaly of the resistivity observed at ambient pressure disappears above 25 GPa (NpAs), 2.7 GPa (NpSb), and 3 GPa (NpBi). The Nel temperature TN of all compounds and the ordered moment of NpAs and NpSb decrease with reduced volume. For NpAs and NpBi the resistance indicates the presence of magnetic order at least up to 16 GPa. The compounds undergo a pressure-induced structural transition with a volume reduction by ?10%. Although in the resistance of NpSb the signature of magnetic order is lost already at 8 GPa in the high-pressure phase, a magnetic hyperfine field is present, which is reduced by ?30% relative to the NaCl phase. It is suggested that the resistance collapse is caused by a change of the magnetic structure, that the decrease of TN is due to a modification of the Fermi surface besides a small 5f delocalization, and that in NpSb the volume reduction in the structural high-pressure phase leads to an enhanced 5f delocalization.

V. Ichas; S. Zwirner; D. Braithwaite; J. C. Spirlet; J. Rebizant; W. Potzel

1997-12-01T23:59:59.000Z

325

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations in RAgSb{sub 2} (R=Y, La-Nd, Sm)  

SciTech Connect (OSTI)

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb{sub 2} series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H{lt}30&hthinsp;kG) and high temperatures (up to 25 K in SmAgSb{sub 2}). For H{parallel}c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m{sub 0}. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb{sub 2}, antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb{sub 2} and CeAgSb{sub 2}, the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. {copyright} {ital 1999} {ital The American Physical Society}

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Lacerda, A.H. [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

1999-11-01T23:59:59.000Z

326

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations in RAgSb[sub 2] (R=Y, La-Nd, Sm)  

SciTech Connect (OSTI)

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb[sub 2] series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H[lt]30 hthinsp;kG) and high temperatures (up to 25 K in SmAgSb[sub 2]). For H[parallel]c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m[sub 0]. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb[sub 2], antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb[sub 2] and CeAgSb[sub 2], the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. [copyright] [ital 1999] [ital The American Physical Society

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. (Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)); Lacerda, A.H. (National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))

1999-11-01T23:59:59.000Z

327

Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases  

SciTech Connect (OSTI)

A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchangecorrelation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. It is found that the hexagonal phase is an indirect gap semiconductor. Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

Arghavani Nia, Borhan, E-mail: b.arghavani@gmail.com [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Sedighi, Matin [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Shahrokhi, Masoud [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Nano-Science and Nano-Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physics Science Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-1795, Tehran (Iran, Islamic Republic of)

2013-11-15T23:59:59.000Z

328

Electronic structure of Ba3CuSb2O9: A candidate quantum spin liquid compound  

Science Journals Connector (OSTI)

Using density-functional methods, we study the electronic structure of Ba3CuSb2O9, a candidate material for the quantum spin liquid behavior. We study both the triangular lattice as well as the recently proposed hexagonal lattice structures with flipped Cu-Sb dumbbells. The band structure near the Fermi energy is described very well by a tight-binding Hamiltonian involving the Cu (eg) orbitals, confirming their central role in the physics of the problem. A minimal tight-binding Hamiltonian for the triangular structure is presented. The Cu (d9) ions (a single eg hole in the band structure) present in the compound are expected to be Jahn-Teller centers, while the nature of the Jahn-Teller distortions in this material is still under debate. Solving a simple model by exact diagonalization, we show that electronic correlation effects in general enhance the tendency towards a Jahn-Teller distortion by reducing the kinetic energy due to correlation effects. Our density-functional calculations do indeed show a significant Jahn-Teller distortion of the CuO6 octahedra when we include the correlation effects within the Coulomb-corrected GGA+U method, so that the Jahn-Teller effect is correlation driven. We argue for the presence of a random static Jahn-Teller distortion in the hexagonal structure rather than a dynamical one because of the broken octahedral symmetry around the CuO6 octahedra and the potential fluctuations inherently present in the system caused by a significant disorder, which is believed to be present, in particular, due to the flipped Cu-Sb dumbbells.

K. V. Shanavas; Z. S. Popovi?; S. Satpathy

2014-02-27T23:59:59.000Z

329

Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study  

SciTech Connect (OSTI)

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.

AbuEl-Rub, Khaled M. [Department of Applied Physical Sciences, Jordan University of Science and Technology Irbid, 21141 (Jordan)

2012-09-06T23:59:59.000Z

330

Fabrication and electrical properties of La8.33Sb(SiO4)6O2 thick films for solid oxide fuel cells  

Science Journals Connector (OSTI)

In this study Sb-substituted La8.33Sb(SiO4)6O2 apatite thick films were fabricated by using a screen printing method and the structural and electrical properties of these materials with variation in sintering temperature for solid oxide fuel cells were investigated. With increased sintering temperatures the second phase La2SiO5 phase decreased and the specimens sintered at over 1350?C showed typical X-ray diffraction patterns of apatite polycrystalline structure. The grain size increased and porosity decreased with increasing sintering temperatures. The thickness of all films was approximately 2530??m. La8.33Sb(SiO4)6O2 thick films sintered at 1350?C showed good conductivity and activation energy characteristics at 9.87??10?5 S cm?1and 1.24?eV respectively.

Dae-Young Kim; Sung-Gap Lee

2013-01-01T23:59:59.000Z

331

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 0.1 eV and valence band offset of 3.35 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

332

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

333

Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)  

SciTech Connect (OSTI)

This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

Myers, Kenneth D.

1999-11-08T23:59:59.000Z

334

?-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy  

Science Journals Connector (OSTI)

Two-dimensional (2D) buried ?-function-shaped Sb-doping profiles have been obtained in Si using a low-energy accelerated Sb-ion source during molecular-beam epitaxy. A combination of secondary-ion mass spectrometry (SIMS), capacitance-voltage (C-V) measurements, and cross-sectional transmission electron microscopy (XTEM) was used to investigate dopant distributions and to determine profile widths. The 2D-sheet Sb-doping concentration NSb, obtained by integrating SIMS ?-doping profiles in samples grown with substrate temperature Ts=620 C and Sb-ion acceleration potentials VSb=200 and 300 V, was found to vary linearly with the product of the Sb-ion flux and the exposure time (i.e., the ion dose) over the NSb range from 51012 to 21014 cm-2. The full width at half maximum (FWHM) concentration of ?-doping profiles in Si(001) films was less than the depth resolution of both SIMS and C-V measurements (?10 and 3 nm, respectively). High-resolution XTEM lattice images show that the FWHM was ?2 nm. This is consistent with dopant incorporation simulations, based upon a multisite transition-state dopant incorporation model, which show that accelerated-beam dopant species are trapped in near-surface substitutional sites with atomic mobilities between those of surface and bulk atoms. Dopant surface segregation during growth is strongly suppressed, and the dopant distribution is determined primarily by the straggle in ion trapping distributions. The present results are compared with profile broadening observed in ?-doped layers obtained by solid-phase epitaxy of amorphous Si containing a buried Sb layer.

W.-X. Ni; G. V. Hansson; J.-E. Sundgren; L. Hultman; L. R. Wallenberg; J.-Y. Yao; L. C. Markert; J. E. Greene

1992-09-15T23:59:59.000Z

335

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S. Bozin,1 S. M. Haile,2 G. J. Snyder,2 and S. J. L. Billinge1,  

E-Print Network [OSTI]

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S April 2007 A study of the local atomic structure of the promising thermoelectric material -Zn4Sb3, using Thermoelectric materials allow for direct conversion of heat into electrical energy and vice versa. They hold

336

Synthesis, structure and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9}: A double perovskite with competing antiferromagnetic and ferromagnetic interactions  

SciTech Connect (OSTI)

The synthesis, structural characterization, and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9} double perovskite are reported. The crystal structure has been refined by X-ray and neutron powder diffraction data in the monoclinic space group P2{sub 1}/n. Co{sup 2+} and Sb{sup 5+} have the maximum order allowed for the La{sub 3}Co{sub 2}SbO{sub 9} stoichiometry. Rietveld refinements of powder neutron diffraction data show that at room temperature the cell parameters are a=5.6274(2) A, b=5.6842(2) A, c=7.9748(2) A and {beta}=89.999(3) Degree-Sign . Magnetization measurements indicate the presence of ferromagnetic correlations with T{sub C}=55 K attributed to the exchange interactions for non-linear Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. The effective magnetic moment obtained experimentally is {mu}{sub exp}=4.38 {mu}{sub B} (per mol Co{sup 2+}), between the theoretical one for spin only (3.87 {mu}{sub B}) and spin-orbit value (6.63 {mu}{sub B}), indicating partially unquenched contribution. The low magnetization value at high magnetic field and low temperature (1 {mu}{sub B}/f.u., 5 T and 5 K) and the difference between ZFC and FC magnetization curves (at 5 kOe) indicate that the ferromagnetism do not reach a long range order and that the material has an important magnetic frustration. - Graphical abstract: Co-O-Co (Yellow octahedra only) rich zones (antiferromagnetic) are in contact with Co-O-Sb-O-Co (Red and yellow octahedra) rich zones (Ferromagnetic) to give the peculiar magnetic properties, as a consequence, a complex hysteresis loop can be observed composed by a main and irreversible curve in all the measured range, superimposed with a ferromagnetic component at low fields. Highlights: Black-Right-Pointing-Pointer La{sub 3}Co{sub 2}SbO{sub 9} has small Goldschmidt Tolerance Factor (t) due to the small size of La{sup 3+}. Black-Right-Pointing-Pointer Small t determines an angle for the path Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} of 153 Degree-Sign . Black-Right-Pointing-Pointer Ferromagnetism is attributed to exchange interactions for Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. Black-Right-Pointing-Pointer Ferromagnetic nanoclusters are embedded in an antiferromagnetic matrix.

Franco, D.G.; Fuertes, V.C.; Blanco, M.C. [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)] [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina); Fernandez-Diaz, M.T. [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France)] [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France); Sanchez, R.D., E-mail: rodo@cab.cnea.gov.ar [Centro Atomico Bariloche, CNEA and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Rio Negro (Argentina); Carbonio, R.E., E-mail: carbonio@fcq.unc.edu.ar [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)

2012-10-15T23:59:59.000Z

337

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pumpprobe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4nm)/Ge(3nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

338

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 2)-O  

Science Journals Connector (OSTI)

The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(12)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor-oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.02.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.53.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers.

J. J. K. Lng; M. P. J. Punkkinen; M. Tuominen; H.-P. Hedman; M. Vh-Heikkil; V. Polojrvi; J. Salmi; V.-M. Korpijrvi; K. Schulte; M. Kuzmin; R. Punkkinen; P. Laukkanen; M. Guina; K. Kokko

2014-07-29T23:59:59.000Z

339

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces  

SciTech Connect (OSTI)

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 Multiplication-Sign 10{sup 15}-1 Multiplication-Sign 10{sup 16} cm{sup -2}) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga{sub 2}O{sub 3} fractions were also observed on 'oxide free' samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

El-Atwani, Osman [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Allain, J. P. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Suslova, Anastassiya [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-12-17T23:59:59.000Z

340

Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}  

SciTech Connect (OSTI)

We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain)] [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France)] [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

2010-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

The influence of Zn vacancy on thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3}: A molecular dynamics study  

SciTech Connect (OSTI)

The influence of Zn vacancy on lattice thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3} is studied by non-equilibrium molecular dynamics approach. The lattice thermal conductivity of single-crystal bulk {beta}-Zn{sub 4}Sb{sub 3} decreases rapidly when there is Zn vacancy, and then when the vacancy grows, the lattice thermal conductivity decreases further but rather slowly, which suggests a scaling law of k{sub v}{approx}n{sub v}{sup -{alpha}} of Zn atom vacancy (n{sub v}) to lattice thermal conductivity (k{sub vac}). This phenomenon is attributed to the fact that the existence of vacancy scattering can significantly decrease the mean free path. When the Zn atom vacant proportion reaches 10%, that is the vacancy model of {beta}-Zn{sub 4}Sb{sub 3}, the lattice thermal conductivity is 1.32 W/mk along the x-axis and 1.62 W/mk along the z-axis, respectively, which drops by {approx}90% that of its full occupancy model. Therefore, our calculations show that the 10% Zn atom vacancy in {beta}-Zn{sub 4}Sb{sub 3} is the main reason for its exceptionally low thermal conductivity, and the interstitial Zn atoms have little effect on the thermal conductivity of single-crystal {beta}-Zn{sub 4}Sb{sub 3}. - Graphical abstract: The bulk thermal conductivity (k{sub pure}) is 11.88 W/mk along the x-axis and 20.00 W/mk the z-axis. When it is 10% vacancy, namely the vacancy model of {beta}-Zn{sub 4}Sb{sub 3}, the thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3} is 1.32 W/mk along the x-axis and 1.62 W/mk along the z-axis, respectively, which reduces by {approx}90% that of its full occupancy model. Our calculations show that the 10% Zn atom vacancy in the crystal structure of {beta}-Zn{sub 4}Sb{sub 3} is the main reason for its exceptionally low thermal conductivity, and the interstitial Zn atoms have little effect on the thermal conductivity of single-crystal {beta}-Zn{sub 4}Sb{sub 3}. Highlights: Black-Right-Pointing-Pointer The lattice stability of {beta}-Zn{sub 4}Sb{sub 3} decreases remarkably with the growing vacancy. Black-Right-Pointing-Pointer 10% Zn vacancy leads to its low thermal conductivity and structural instability. Black-Right-Pointing-Pointer Interstitial Zn atoms in {beta}-Zn{sub 4}Sb{sub 3} mainly stabilize the crystal structure.

Zhai, Pengcheng [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China) [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Li, Guodong; Wen, Pengfei [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Li, Yao, E-mail: liyao06@126.com [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie; Liu, Lisheng [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-09-15T23:59:59.000Z

342

Strong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied by Resonant X-Ray Emission Spectroscopy  

E-Print Network [OSTI]

electrons tends to stabilize magnetic ordered states. Permanent ferromagnets, such as Nd-Fe-B and SmStrong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied valence is independent of temperature. This evidences a close interplay between the magnetic instability

Lin, Jung-Fu "Afu"

343

Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a)  

E-Print Network [OSTI]

Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a) Peter-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub of these materials is important for predicting the field-driven heating and phase-change behavior. However

344

Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries  

SciTech Connect (OSTI)

The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles.

Wang Zhong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); General Research Institute for Nonferrous Metal, Beijing 100088 (China); Tian Wenhuai [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Liu Xiaohe [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yang Rong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li Xingguo [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)], E-mail: xgli@pku.edu.cn

2007-12-15T23:59:59.000Z

345

Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV  

E-Print Network [OSTI]

programs for investor owned utility (IOU) territories, the California Solar Initiative (CSI) and the New the solar incentive programs for California, and flat plate PV modules 1 must be listed on the SB1 Solar Homes Partnership (NSHP), as well as solar incentive programs administered by publicly owned

346

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1xZn2Sb2**  

E-Print Network [OSTI]

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1±xZn2Sb. Introduction Because of their ability to convert waste heat into electricity, thermoelectric materials have in efficiency, thermoelectric materials could pro- vide a substantial amount of electrical power from automotive

347

Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder, and T. Caillat  

E-Print Network [OSTI]

. Introduction The best thermoelectric materials are semiconductors which limit the movement of heat conducting. The quality of a thermoelectric material is described by a dimensionless figure-of-merit, ZT, which depends thermoelectric materials have been made from (Bi,Sb)2Te3 compounds. In polycrystalline form, meaning made up

348

Proceedings of the MRS Spring Meeting, San Francisco, March 1997, Symposium Q -Thermoelectrics, in press (1997) THERMAL CONDUCTIVITY OF Zn4-xCdxSb3 SOLID SOLUTIONS  

E-Print Network [OSTI]

performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further performance p-type material [1,2]. -Zn4Sb3 has interesting thermoelectric properties in the 473-673K

349

Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface  

SciTech Connect (OSTI)

It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki [Morphological Research Laboratory, Toray Research Center Inc., Otsu, Shiga (Japan); Kurata, Hiroki; Isoda, Seiji [Institute for Chemical Research, Kyoto University, Uji, Kyoto (Japan)

2011-03-15T23:59:59.000Z

350

Investigation of main coolant pump trip problem in case of SB LOCA for Kozloduy Nuclear Power Plant, WWER-440/V230  

Science Journals Connector (OSTI)

Abstract This paper presents the results of thermal-hydraulic calculation of accident scenarios that involve the trip of main coolant pump (MCP) in case of Small break loss of coolant accident (SB LOCA) for WWER-440/V230 units at Kozloduy Nuclear Power Plant (KNPP), done in support of the development of Symptom Based Emergency Operating Procedures (SB EOPs) for this plant. The main purpose of these analyses is to show how the different time of MCP switching off results in primary inventory depletion in case of SB LOCA and it is reflect on peak cladding temperature. According to this, the SB LOCA scenario is regarded from the point of view of an inadequate core cooling. Therefore, the primary concern is Critical Safety Function (CSF) Core cooling and Primary inventory. High core residual heat, minimal safety injection flow and other initial conditions challenging the mentioned \\{CSFs\\} are the main particularities of the accepted scenarios. The RELAP5/MOD3.2 computer code has been used to perform the analyses in a WWER-440 Nuclear Power Plant (NPP) model. A model of WWER-440 based on Unit 4 of Kozloduy NPP has been developed for the systems thermal-hydraulics code RELAP5/MOD3.2 at the Institute for Nuclear Research and Nuclear Energy Bulgarian Academy of Sciences (INRNE-BAS), Sofia.

Pavlin Groudev; Marina Andreeva; Malinka Pavlova

2015-01-01T23:59:59.000Z

351

Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass Guillaume Guery1,2  

E-Print Network [OSTI]

Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass network, Université de Bordeaux I, Avenue du Dr Schweitzer, 33608 Pessac Cedex, France. Keywords: Chalcogenide glass; Raman spectroscopy; X-ray photoelectron spectroscopy; Glass properties Author whom correspondence should

Paris-Sud XI, Université de

352

High-Temperature Thermoelectric Properties of the SolidSolution Zintl Phase Eu11Cd6Sb12xAsx (x < 3)  

SciTech Connect (OSTI)

Zintl phases are compounds that have shown promise for thermoelectric applications. The title solidsolution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.780.49 W/mK for x = 0; 0.720.53 W/mK for x = 1; and 0.700.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12xAsx are interpreted in discussion with the As site substitution.

Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J.; Snyder, G. Jeffrey; Kauzlarich, Susan M.

2014-02-11T23:59:59.000Z

353

Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter  

SciTech Connect (OSTI)

First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

1995-01-05T23:59:59.000Z

354

Thermodynamic and transport properties of single-crystal Yb{sub 14}MnSb{sub 11}  

SciTech Connect (OSTI)

Relatively large (up to 250 mg) single crystals of the intermetallic compound Yb{sub 14}MnSb{sub 11} have been prepared by a flux-growth technique. The results of thermodynamic and transport measurements of these samples are presented. The compound orders ferromagnetically at approximately T{sub C}=53{plus_minus}1K, with a magnetization consistent with the assignment Mn{sup 3+} (3d{sup 4}) and Yb{sup 2+} (4f{sup 14}). The Mn moments are local in nature, with the full effective and saturated moment of the Hund{close_quote}s rule spin-only ground state. The electrical resistivity has a metallic temperature dependence, with only a modest anisotropy. Room-temperature values of the resistivity are relatively high for an intermetallic compound: 1630{plus_minus}160 {mu}{Omega}cm and 1250{plus_minus}130 {mu}{Omega}cm for currents flowing approximately parallel and perpendicular to the {ital c} axis, respectively. There is a distinct loss of spin-disorder scattering in the resistivity at T{sub C}. From the heat capacity, a rough estimation of the magnetic entropy gives {Delta}S{sub M}{approx}12.1 J/mol K, the value in reasonable agreement with the expected {Delta}S{sub M}{approx}R ln 5 from the assignment of these moments. All of these data are consistent with a picture of Mn{sup 3+} local moments being coupled via conduction electrons. To this end, Yb{sub 14}MnSb{sub 11} appears to be analogous to local-moment rare-earth intermetallic compounds, and may point the way toward a class of 3d Kondo lattice compounds. {copyright} {ital 1999} {ital The American Physical Society}

Fisher, I.R.; Wiener, T.A.; Budko, S.L.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Chan, J.Y.; Kauzlarich, S.M. [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)] [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)

1999-06-01T23:59:59.000Z

355

Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}  

SciTech Connect (OSTI)

Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23?eV is in agreement with the experimental value of 1.2?eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT?=?1.69 is obtained at 950?K for a hole concentration of 3.710{sup 19}?cm{sup ?3}, in agreement with a recent experimental finding of zT?=?1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

Kumar Gudelli, Vijay; Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Andhra Pradesh (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Andhra Pradesh (India); Svane, A.; Christensen, N. E. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

2013-12-14T23:59:59.000Z

356

Crystal structure of the new compound Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x}(x{approx}0.45): The homologous series Pb{sub (2+2N)}(Sb,Pb){sub (2+2N)}S{sub (2+2N)}(S,Cl){sub (4+2N)}Cl{sub N} and its polychalcogenide derivatives (N=1-3)  

SciTech Connect (OSTI)

The new chloro-sulfosalt Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x} (x{approx}0.45) has been synthesized at 500 deg. C from a mixture of PbS, PbCl{sub 2} and Sb{sub 2}S{sub 3}. It crystallizes in the orthorhombic system (space group Pbam), with a=15.194(3) A, b=23.035(5) A, c=4.0591(8) A, V=1420.6 A{sup 3}, Z=4. The crystal structure has been solved by X-ray single-crystal study, with a final R=0.0497. Deviation from stoichiometric Pb{sub 3}Sb{sub 3}S{sub 7}Cl (x coefficient) follows the substitution rule Sb{sup 3+}+S{sup 2-}{yields}Pb{sup 2+}+Cl{sup -}. Sb and Pb sub-positions within mixed (Sb,Pb) sites are discussed; Pb excess precludes any superstructure along c. A unique pure Cl position is bound only to Pb atoms with a distorted square coordination. The title compound is a rod-type structure derived from the SnS archetype, homeotypic with Pb{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}), where the (S{sub 3}){sup 2-} trimer is replaced by two Cl{sup -}; this substitution is quite isovolumic. Other similar structures are: three polychalcogenides Sr{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}), Pb{sub 6}Sb{sub 6}Se{sub 14}(Se{sub 3}) and Eu{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}); KLa{sub 1.28}Bi{sub 3.72}S{sub 8} and its Ln isotypes; dadsonite, Pb{sub 23}Sb{sub 25}S{sub 60}Cl. Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x} is the N=2 member of the homologous series Pb{sub (2+2N)}(Sb,Pb){sub (2+2N)}S{sub (2+2N)}(S,Cl){sub (4+2N)}Cl{sub N}; the N=1 member corresponds to the previously known {approx}Pb{sub 4.3}Sb{sub 3.7}S{sub 8.7}Cl{sub 2.3} compound. Other polychalcogenide derivatives of this homologous series are K{sub 2}Pr{sub 2-x}Sb{sub 4+x}Se{sub 8}(Se{sub 4}) and its Ln isotypes (N=1), as well as SrBiSe{sub 3} (N=3). Such a comparative modular analysis allowed to propose a structural model for the previous synthetic 'Phase Y', {approx}Pb{sub 10}Sb{sub 10}S{sub 23}Cl{sub 4}, corresponding to the combined N=(1+2) homolog. - Graphical abstract: The title compound, Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x}, is derived from the homeotypic persulfide Pb{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}) by substituting two chlorine atoms for the S{sub 3} trimer. This change is quite isovolumic.

Doussier, Charlotte [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France); Moelo, Yves [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France)], E-mail: yves.moelo@cnrs-imn.fr; Meerschaut, Alain; Leone, Philippe; Guillot-Deudon, Catherine [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France)

2008-04-15T23:59:59.000Z

357

Composites of Bi{sub 2-x}Sb{sub x}Te{sub 3} nanocrystals and fullerene molecules for thermoelectricity  

SciTech Connect (OSTI)

New nanocomposite thermoelectric material composed from nanocrystallites of Bi-Sb-Te alloys covered by C{sub 60} molecules has been synthesized and studied. An increase of fullerene content leads to the growth of hole concentration in p-type materials and reduction of electron concentration in n-type materials. The fullerene molecules provide additional scattering of phonons reducing lattice heat conductivity. Reduction of heat conductivity exceeds the reduction of electrical conductivity for fullerene content less than 0.5 volume % and essential enhances the thermoelectric figure of merit. The maximum value of thermoelectric figure of merit equals to 1.17 at 450 K was observed in Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} composite containing 0.5 volume % C{sub 60} molecules. The experimental results were analyzed in a frame of the model based on the Boltzmann equation. The analysis considers light and heavy electrons and holes and accounts the intervalley scattering of charge carriers. The calculations of the kinetic coefficients shows that the improvement of the thermoelectric figure of merit originates from the reduction of the lattice heat conductivity caused by fullerene molecules. The dependencies of the thermoelectric figure of merit on the acceptor concentration were calculated. - Graphical abstract: New nanocomposite thermoelectric material composed from nanocrystallites of Bi-Sb-Te alloys covered by C{sub 60} molecules has been synthesized and studied. An increase of fullerene content leads to the growth of hole concentration in p-type materials and reduction of electron concentration in n-type materials. The fullerene molecules provide additional scattering of phonons reducing lattice heat conductivity and enhances the thermoelectric figure of merit. The maximum value of thermoelectric figure of merit equal to 1.17 at 450 K was observed in Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} composite containing 0.5 volume % fullerene molecules. Simulations of thermoelectric properties were made in frame of four bands, 12 valleys Boltzmann equation approach. Simulated and measured temperature dependencies of thermoelectric properties were compared to get unknown model parameters. These parameters were used to calculate dependencies of thermoelectric properties on acceptor concentration. Calculated dependencies of thermoelectric figure of merit on acceptor concentration are presented in the figure for p-type composites with 0 vol.% C{sub 60} (solid lines) and 0.5 vol.% C{sub 60} (dashed lines). Highlights: Black-Right-Pointing-Pointer C{sub 60} doping of Bi-Sb-Te has acceptor effect. Black-Right-Pointing-Pointer Fullerene molecules prevent recrystallization in Bi-Sb-Te nanocomposites. Black-Right-Pointing-Pointer C{sub 60} in Bi-Sb-Te nanocomposites essentially reduces lattice thermal conductivity. Black-Right-Pointing-Pointer Thermoelectric figure of merit in nanocomposite C{sub 60}-Bi-Sb-Te enhanced.

Kulbachinskii, V.A., E-mail: kulb@mig.phys.msu.ru [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation); Kytin, V.G. [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation)] [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation); Popov, M.Yu.; Buga, S.G.; Stepanov, P.B.; Blank, V.D. [Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow Region 142190 (Russian Federation)] [Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow Region 142190 (Russian Federation)

2012-09-15T23:59:59.000Z

358

Preferred orientation of nanoscale order at the surface of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect (OSTI)

We report evidence that as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films contain nanoscale clusters that exhibit a preferred orientation, attributed to the earliest stages of heterogeneous nucleation. Fluctuation transmission electron microscopy reveals structural order in the samples, but (220)-related contributions are suppressed. When homogeneous nucleation is promoted via electron bombardment, the sample remains diffraction amorphous but the (220) contribution appears. We simulated data for randomly oriented nanoscale order using ab initio molecular-dynamics models of Ge{sub 2}Sb{sub 2}Te{sub 5}. The simulated (220) contribution always has larger magnitude than higher-order signals; thus, the lack of the experimental signal indicates a significant preferred orientation.

Tony Li, Tian; Abelson, John R. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States) [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Hoon Lee, Tae; Elliott, Stephen R. [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)] [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

2013-11-11T23:59:59.000Z

359

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect (OSTI)

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

360

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect (OSTI)

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Nepheline Formation Potential in Sludge Batch 4 (SB4) and Its Impact on Durability: Selecting Glasses for a Phase 2 Study  

SciTech Connect (OSTI)

The likelihood for the formation of nepheline in Sludge Batch 4 (SB4) glass systems and the potential impact of nepheline on the durability of these systems is part of the frit development efforts for SB4. The effect of crystallization on glass durability is complex and depends on several interrelated factors including the change in residual glass composition, the formation of internal stress or microcracks, and the preferential attack at the glass-crystal interface. Perhaps one of the most significant effects is the type and extent (or fraction) of crystallization and the change to the residual glass composition. A strong increase in glass dissolution (or decrease in durability) has been observed in previous studies in glasses that formed aluminum-containing crystals, such as NaAlSiO{sub 4} (nepheline) and LiAlSi{sub 2}O{sub 6}, and crystalline SiO{sub 2}. Although it is well known that the addition of Al{sub 2}O{sub 3} to borosilicate glasses enhances the durability of the waste form (through creation of network-forming tetrahedral Na{sup +}-[AlO{sub 4/2}]{sup -} pairs), the combination of high Al{sub 2}O{sub 3} and Na{sub 2}O can lead to the formation of nepheline (NaAlSiO{sub 4}). Given the projected high concentration of Al{sub 2}O{sub 3} in SB4 and the potential use of a high Na{sub 2}O based frit to improve melt rate and a high Na{sub 2}O sludge due to settling problems, the potential formation of nepheline in various SB4 systems continues to be assessed. The most recent compositional projections from the Closure Business Unit (CBU) for SB4 may be framed around three decision areas: the sodium molarity of the sludge (at values of 1M Na and 1.6M Na), the SB3 heel that will be included in the batch (expressed in inches of SB3 sludge with values of 0, 40, and 127''), and the introduction of an ARP stream into the sludge (which is represented by six options: no ARP, ARPa, ARPe, ARPk, ARPm, and ARPv). Candidate frits are being identified for these options via a paper study approach with the intent of downselecting to a set of key frits whose operating windows (i.e., waste loading intervals that meet Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) criteria) are robust to and/or selectively optimal for these sludge options. The primary or key frits that appear attractive on paper (i.e., down selected via the paper study) will be transferred into SRNL's experimental studies supporting SB4; specifically, the melt-rate studies, chemical process cell flowsheet runs and, if needed, a glass variability study.

Peeler, D

2005-08-15T23:59:59.000Z

362

Strain modified/enhanced ferromagnetism in Mn{sub 3}Ge{sub 2} thin films on GaAs(001) and GaSb(001)  

SciTech Connect (OSTI)

Ferromagnetic Mn{sub 3}Ge{sub 2} thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. The results of our work revealed that the substrate facilitates to modify magnetic and electrical properties of Mn{sub 3}Ge{sub 2} films due to tensile/compressive strain effect between films and substrates. The characteristic spin-flopping transition at around 150 K for the bulk Mn{sub 3}Ge{sub 2} disappeared completely for both samples. The antiferromagnetism below 150 K changed to ferromagnetism and retained above room temperature. The saturation magnetization was found to be 0.23 and 1.32 {mu}{sub B}/Mn atom at 10 K for the samples grown on GaSb(001) and GaAs(001), respectively.

Dang Duc Dung; Duong Van Thiet [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam); Feng Wuwei; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, In-Sung [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Bo Lee, Sung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2013-04-21T23:59:59.000Z

363

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

364

SLUDGE BATCH 7 (SB7) WASHING DEMONSTRATION TO DETERMINE SULFATE/OXALATE REMOVAL EFFICIENCY AND SETTLING BEHAVIOR  

SciTech Connect (OSTI)

To support Sludge Batch 7 (SB7) washing, a demonstration of the proposed Tank Farm washing operation was performed utilizing a real-waste test slurry generated from Tank 4, 7, and 12 samples. The purpose of the demonstration was twofold: (1) to determine the settling time requirements and washing strategy needed to bring the SB7 slurry to the desired endpoint; and (2) to determine the impact of washing on the chemical and physical characteristics of the sludge, particularly those of sulfur content, oxalate content, and rheology. Seven wash cycles were conducted over a four month period to reduce the supernatant sodium concentration to approximately one molar. The long washing duration was due to the slow settling of the sludge and the limited compaction. Approximately 90% of the sulfur was removed through washing, and the vast majority of the sulfur was determined to be soluble from the start. In contrast, only about half of the oxalate was removed through washing, as most of the oxalate was initially insoluble and did not partition to the liquid phase until the latter washes. The final sulfur concentration was 0.45 wt% of the total solids, and the final oxalate concentration was 9,900 mg/kg slurry. More oxalate could have been removed through additional washing, although the washing would have reduced the supernatant sodium concentration.The yield stress of the final washed sludge (35 Pa) was an order of magnitude higher than that of the unwashed sludge ({approx}4 Pa) and was deemed potentially problematic. The high yield stress was related to the significant increase in insoluble solids that occurred ({approx}8 wt% to {approx}18 wt%) as soluble solids and water were removed from the slurry. Reduction of the insoluble solids concentration to {approx}14 wt% was needed to reduce the yield stress to an acceptable level. However, depending on the manner that the insoluble solids adjustment was performed, the final sodium concentration and extent of oxalate removal would be prone to change. As such, the strategy for completing the final wash cycle is integral to maintaining the proper balance of chemical and physical requirements.

Reboul, S.; Click, D.; Lambert, D.

2010-12-10T23:59:59.000Z

365

Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.  

SciTech Connect (OSTI)

Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

Overmyer, Donald L.; Webb, Edmund Blackburn, III (,; ); Siegal, Michael P.; Yelton, William Graham

2006-11-01T23:59:59.000Z

366

p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient  

SciTech Connect (OSTI)

Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 C to 600 C and then annealed in situ at 800 C under vacuum (pressure ?5 10{sup ?8} mbar). Films grown for temperature range of 200500 C showed p-type conduction with hole concentration of 1.374 10{sup 16} to 5.538 10{sup 16} cm{sup ?3}, resistivity of 66.73312.758 ? cm, and carrier mobility of 4.9648.846 cm{sup 2} V{sup ?1} s{sup ?1} at room temperature. However, the film grown at 600 C showed n-type behavior. Additionally, current-voltage (IV) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}2V{sub Zn} complex caused acceptor-like behavior in SZO films.

Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal [Hybrid Nanodevice Research Group, Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)] [Hybrid Nanodevice Research Group, Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India); Deshpande, Uday P.; Gupta, Mukul [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)] [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)

2013-10-28T23:59:59.000Z

367

Neutron diffraction studies on the Heusler alloy Ni{sub 50}Mn{sub 37}Sb{sub 13}  

SciTech Connect (OSTI)

The evolution of martensitic to austenitic transformation in Ni{sub 50}Mn{sub 37}Sb{sub 13} has been studied usingtemperature dependent neutron diffraction, thermal property, and magnetization studies. Differential scanning calorimetric studies reveal a martensitic transformation T{sub M} around 291 K. The magnetization data yield a ferromagnetic ordering temperature of 329 K in the austenitic phase and 230 K in the martensitic phase. The analysis of the powder neutron diffraction data in the temperature range of 325-12 K indicates a structural transition from a high temperature cubic L2{sub 1} type structure to an orthorhombic structure. At 270 K, both cubic and orthorhombic phases coexist. Anisotropic unit cell changes are observed at the martensitic transformation: The unit cell expands by about 1.5% along the a axis, by about 2.5% along the c axis, and compresses by about 4.28% along the b axis. Both cubic and orthorhombic phases show commensurate collinear ferromagnetic ordering with a magnetic moment of {approx}3.67 {mu}{sub B}/Mn in Mn (2a and 2f) sites.

Rama Rao, N. V.; Chelvane, J. Arout; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Hyderabad 500 058 (India); Morozkin, A. V. [Department of Chemistry, Moscow Lomonosov State University, Moscow 119992 (Russian Federation); Lamsal, J. [Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211 (United States); Yelon, W. B. [Materials Research Center and Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States); Nirmala, R. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India); Suresh, K. G. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400 076 (India); Malik, S. K. [International Institute of Physics (IIP)-UFRN, Natal, 59072-970 (Brazil)

2011-04-01T23:59:59.000Z

368

Enhancement of thermoelectric properties of CoSb3-based skutterudites by double filling of Tl and In  

Science Journals Connector (OSTI)

Thermoelectric (TE) generators can directly generate electrical power from waste heat and thus could be an important part of the solution to future power supply and sustainable energy management. The main obstacle to the widespread use of TE materials in diverse industries e.g. for exhaust heat recovery in automobiles is their low efficiency in converting heat to electricity. The conversion efficiency of TE materials is quantified by the dimensionless figure of merit ZT and the way to enhance ZT is to decrease the lattice thermal conductivity (?lat ) of the material while maintaining a high electrical conductivity i.e. to create a situation in which phonons are scattered but electrons are unaffected. Here we report skutterudites filled by Tl and In Tl0.1In x Co4Sb12 which allow a dramatic reduction of ?lat yielding a ZT of 1.2 at 700?K. We demonstrate that the reduction of ?lat is due to the effective phonon scattering induced both by the rattling of Tl and In and by the naturally formed In2O3nanoparticles (<50?nm). The combined approach of double filling and self-formed nanostructures might be applicable to various clathrate compounds. Thus our results point to a new strategy in the improvement of bulk TE materials.

Adul Harnwunggmoung; Ken Kurosaki; Atsuko Kosuga; Manabu Ishimaru; Theerayuth Plirdpring; Rattikorn Yimnirun; Jaru Jutimoosik; Saroj Rujirawat; Yuji Ohishi; Hiroaki Muta; Shinsuke Yamanaka

2012-01-01T23:59:59.000Z

369

Nepheloid layer distribution in the Benguela upwelling area offshore Namibia.  

E-Print Network [OSTI]

at the shelf break feeds a major intermediate nepheloid layer (INL) at 25.51S. This INL is positioned at 250

Mohrholz, Volker

370

THE IMPACT OF A TANK 40H DECANT ON THE PROJECTED OPERATING WINDOWS FOR SB4 AND GLASS SELECTION STRATEGY IN SUPPORT OF THE VARIABILITY STUDY  

SciTech Connect (OSTI)

The Liquid Waste Organization (LWO) has requested that the Savannah River National Laboratory (SRNL) to assess the impact of a 100K gallon decant volume from Tank 40H on the existing sludge-only Sludge Batch 4 (SB4)-Frit 510 flowsheet and the coupled operations flowsheet (SB4 with the Actinide Removal Process (ARP)). Another potential SB4 flowsheet modification of interest includes the addition of 3 wt% sodium (on a calcined oxide basis) to a decanted sludge-only or coupled operations flowsheet. These potential SB4 flowsheet modifications could result in significant compositional shifts to the SB4 system. This paper study provides an assessment of the impact of these compositional changes to the projected glass operating windows and to the variability study for the Frit 510-SB4 system. The influence of the compositional changes on melt rate was not assessed in this study nor was it requested. Nominal Stage paper study assessments were completed using the projected compositions for the various flowsheet options coupled with Frit 510 (i.e., variation was not applied to the sludge and frit compositions). In order to gain insight into the impacts of sludge variation and/or frit variation (due to the procurement specifications) on the projected operating windows, three versions of the Variation Stage assessment were performed: (1) the traditional Variation Stage assessment in which the nominal Frit 510 composition was coupled with the extreme vertices (EVs) of each sludge, (2) an assessment of the impact of possible frit variation (within the accepted frit specification tolerances) on each nominal SB4 option, and (3) an assessment of the impact of possible variation in the Frit 510 composition due to the vendor's acceptance specifications coupled with the EVs of each sludge case. The results of the Nominal Stage assessment indicate very little difference among the various flowsheet options. All of the flowsheets provide DWPF with the possibility of targeting waste loadings (WLs) from the low 30s to the low 40s with Frit 510. In general, the Tank 40H decant has a slight negative impact on the operating window, but DWPF still has the ability to target current WLs (34%) and higher WLs if needed. While the decant does not affect practical WL targets in DWPF, melt rate could be reduced due to the lower Na{sub 2}O content. If true, the addition of 3 wt% Na{sub 2}O to the glass system may regain melt rate, assuming that the source of alkali is independent of the impact on melt rate. Coupled operations with Frit 510 via the addition of ARP to the decanted SB4 flowsheet also appears to be viable based on the projected operating windows. The addition of both ARP and 3 wt% Na{sub 2}O to a decanted Tank 40H sludge may be problematic using Frit 510. Although the Nominal Stage assessments provide reasonable operating windows for the SB4 flowsheets being considered with Frit 510, introduction of potential sludge and/or frit compositional variation does have a negative impact. The magnitude of the impact on the projected operating windows is dependent on the specific flowsheet options as well as the applied variation. The results of the traditional Variation Stage assessments indicate that the three proposed Tank 40H decanted flowsheet options (Case No.2--100K gallon decant, Case No.3--100K gallon decant and 3 wt% Na{sub 2}O addition and Case No.4--100K gallon decant and ARP) demonstrate a relatively high degree of robustness to possible sludge variation over WLs of interest with Frit 510. However, the case where the addition of both ARP and 3 wt% Na{sub 2}O is considered was problematic during the traditional Variation Stage assessment. The impact of coupling the frit specifications with the nominal SB4 flowsheet options on the projected operating windows is highly dependent on whether the upper WLs are low viscosity or liquidus temperature limited in the Nominal Stage assessments. Systems that are liquidus temperature limited exhibit a high degree of robustness to the applied frit and sludge variation, while those that are low viscosity li

Raszewski, F; Tommy Edwards, T; David Peeler, D

2008-02-07T23:59:59.000Z

371

Structure and properties of Na{sub x}M{sub 2}SbO{sub 6}yH{sub 2}O, M=Co(III), Ni(III) honeycomb oxyhydrates  

SciTech Connect (OSTI)

The oxyhydrates Na{sub 0.85}Co{sub 2}SbO{sub 6}1.7H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}1.5H{sub 2}O were prepared by Br{sub 2} oxidation of Na{sub 3}Co{sub 2}SbO{sub 6} and Na{sub 3}Ni{sub 2}SbO{sub 6} and exposure to ambient air. Their composition and structure are characterized by thermogravimetric analysis, elemental analysis and powder X-ray diffraction. Both form monolayer hydrates with metal cations (Co or Ni) near the 3+ oxidation state. In the parent materials, MO{sub 6} octahedra surround SbO{sub 6} units, forming a honeycomb geometry; Rietveld refinement of the hydrate phases indicate that this motif is retained. Magnetic susceptibility plots display paramagnetic behavior and CurieWeiss fits support the 3+ oxidation state (low spin d{sup 6}s=0 for Co and low spin d{sup 7}s=1/2 for Ni). Close inspection of the Ni hydrates susceptibility reveals a feature at 6.2 K and a non-linear magnetization at 2 K with no saturation up to 9 T. Heat capacity measurements show a large amount of excess entropy in the Ni hydrate in the 220 K temperature range, while the heat capacity of the Co hydrate can be described by a simple lattice contribution. The Ni hydrate sample is easily dehydrated by heating above 100 C and forms a new Na-deficient phase, Na{sub 0.95}Ni{sub 2}SbO{sub 6}, which is stable at room temperature. Magnetic susceptibility of this phase is consistent with the Ni atom remaining in the 3+ oxidation state after dehydration. - Graphical abstract: Powder diffraction patterns of Na{sub 3}Ni{sub 2}SbO{sub 6}, Na{sub 0.95}Ni{sub 2}SbO{sub 6}1.5H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}. Each pattern has been normalized in intensity. Cartoons depict the change in layer separation with hydration and give the approximate distances between layers and Ni atoms. Highlights: New oxyhydrate phases with honeycomb lattices are formed. CurieWeiss fits indicate Ni{sup 3+} (s=1/2). Heat capacity shows a large release of entropy for Ni phase, likely due to a complex magneto-structural phase transition.

Roudebush, J.H., E-mail: jhr@princeton.edu; Cava, R.J.

2013-08-15T23:59:59.000Z

372

Eight-band kp modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared  

SciTech Connect (OSTI)

Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10??m. Eight-band kp approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSb and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.

Ryczko, K.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

2013-12-14T23:59:59.000Z

373

Optical properties change of Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films by laser irradiation  

SciTech Connect (OSTI)

The thermally evaporated Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films of 800 nm thickness were subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The optical band gap was increased due to photo induced effects along with the decrease in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra supports the optical changes happening in the film due to light exposure.

Naik, Ramakanta [Physics Department, Utkal University, Bhubaneswar, Odisha, 751004 (India) and Physics Department, Indian Institute of Science, Bangalore, 560012 (India); Vinod, E. M.; Kumar, C.; Ganesan, R. [Physics Department, Indian Institute of Science, Bangalore, 560012 (India)

2013-02-05T23:59:59.000Z

374

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells  

SciTech Connect (OSTI)

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63??10{sup 3} cm{sup 2}/Vs to 2.71??10{sup 3}?cm{sup 2}/Vs for a 3?nm InGaAs well.

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-03-28T23:59:59.000Z

375

Effects of Se substitution on the thermoelectric performance of n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites  

SciTech Connect (OSTI)

Highlights: ? The simple solid state reaction technique was employed to prepare Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites. ? The thermal conductivity decreases gradually with the increasing Se content. ? Doping with moderate Se is an effective way to enhance the thermoelectric performance of Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}. ? The highest ZT of 1.11 at 800 K is obtained for the Co{sub 4}Sb{sub 11.3}Te{sub 0.58}Se{sub 0.12} sample. -- Abstract: A series of double-substituted Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites have been fabricated by combining the solid state reaction and the spark plasma sintering method, and the effects of Se substitution on the thermoelectric properties are characterized by measurements of the electrical conductivity, the Seebeck coefficient and the thermal conductivity in the temperature range of 300800 K. Doping Se into the Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} matrix suppresses the carrier concentration, and the electrical conductivity actually decreases with the Se content. However, moderate Se doping is effective in enhancing the thermoelectric performance of the n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}, because of the resulted dramatically decreased thermal conductivity. Analyses indicate that the heightened point-defect scattering induced by Se doping together with the electronphonon scattering induced by Te doping is responsible for the reduction of lattice thermal conductivity of these compounds.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)

2012-07-15T23:59:59.000Z

376

Vacancygroup-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi  

Science Journals Connector (OSTI)

The electronic properties and thermal stability of centers incorporating a vacancy and a group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy-group-V-impurity atom pairs (E centers) have been induced by irradiation with Co60 ? rays and studied by means of capacitance transient techniques with the use of Au-Ge Schottky barriers. It is argued that the E centers in Ge have three charge states: double negative, single negative and neutral, and introduce two energy levels into the gap. There are pronounced changes in the activation energies of charge carrier emission for the particular states with the changes in the type of impurity atoms. The emission of an electron from the doubly negatively charged state of the centers is accompanied by a large change in entropy (?S), so, the free energy of the electron ionization, ?G(????)=?H(????)?T?S(????), changes significantly with temperature. Consequently, the position of the second acceptor level of the E centers {E(????)=Ec??G(????)} is temperature dependent. In Ge crystals having shallow donor concentrations in the range 10131015cm?3 at equilibrium conditions half-occupancy of the doubly negatively charged state of the vacancy-group-V-impurity atom pairs occurs when the Fermi level is at Ec?(0.180.22)eV. Changes in the entropy of ionization and the energy of electron emission for the double negative state of the E centers follow the Meyer-Neldel rule. It has been shown that the directly measured capture cross sections of electrons at the singly negatively charged E centers are temperature dependent and can be described by the multiphonon-assisted capture model. The first acceptor level of the E centers is in the lower part of the band gap. The formation of one vacancygroup-V-impurity atom complex results in the removal of at least two electrons from the conduction band in n-type Ge. It is thought that the E centers are responsible for the fast free carrier removal and n?p conversion of the conductivity type in oxygen-lean Ge crystals upon electron- or ?-irradiation at room temperature. The thermal stability of the E centers in Ge has been found to increase with an increase in the size of donor atoms.

V. P. Markevich; I. D. Hawkins; A. R. Peaker; K. V. Emtsev; V. V. Emtsev; V. V. Litvinov; L. I. Murin; L. Dobaczewski

2004-12-27T23:59:59.000Z

377

Magnetic and transport properties of the rare-earth-based Heusler phases RPdZ and RPd2Z (Z=Sb,Bi)  

Science Journals Connector (OSTI)

Four series of ternary compounds RPdSb (R=Y,Ho,Er), RPdBi (R=Nd,Y,Dy,Ho,Er), RPd2Sb (R=Y,Gd-Er), and RPd2Bi (R=Y,Dy-Er) were studied by means of magnetization, magnetic susceptibility, electrical resistivity, magnetoresistivity, thermoelectric power, and Hall effect measurements, performed in the temperature range 1.5300K and in magnetic fields up to 12T. All these ternaries, except for diamagnetic Y-based phases, exhibit localized magnetism of R3+ ions, and a few of them order antiferromagnetically at low temperatures (TN=214K). The equiatomic compounds show half-metallic conductivity due to the formation of narrow gaps in their electronic band structures near the Fermi energy. Their Seebeck coefficient at room temperature is exceptionally high (S up to 200?V?K), being promising for thermoelectric applications. In contrast, all the 1:2:1 phases are semimetals and their thermoelectric power is much lower (maximum S of 1025?V?K). The Hall effect in the compounds studied corroborates complex character of their electronic structure with multiple electron and hole bands with different temperature and magnetic field variations of carrier concentrations and their mobilities.

K. Gofryk; D. Kaczorowski; T. Plackowski; A. Leithe-Jasper; Yu. Grin

2005-09-09T23:59:59.000Z

378

Stimulated crystallization of melt-quenched Ge{sub 2}Sb{sub 2}Te{sub 5} films employing femtosecond laser double pulses  

SciTech Connect (OSTI)

The phase transformation of Ge{sub 2}Sb{sub 2}Te{sub 5} films from the melt-quenched amorphous phase into the crystalline phase induced by 800 nm, 100 fs laser pulses has been studied. For partly amorphized films, progressive crystallization could be induced by single pulses, which can be explained by growth of already existing crystalline embryos. For completely amorphized films, it was not possible to induce crystallization with one or two consecutive pulses; three pulses being the threshold for the onset of crystallization. By employing a fs laser double pulse with an adjustable inter-pulse delay, partial crystallization could be triggered for a delay range of 200 fs-100 ps, while for longer delays no crystallization was possible. The time window for stimulated crystallization can be related to the relaxation dynamics of free electrons excited by the first pulse, which are further excited by the second pulse still remaining in the excited state. Our results indicate that the lifetime of excited electrons in melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} is Almost-Equal-To 100 ps.

Cotton, Rebecca L.; Siegel, Jan [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)

2012-12-15T23:59:59.000Z

379

Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)  

SciTech Connect (OSTI)

P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, M. [GM Research and Development Center; Waldo, R.A. [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation; Cai, Wei [ORNL; Wang, Hsin [ORNL

2012-01-01T23:59:59.000Z

380

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

river dolphins Investigating dolphin deaths in WA  

E-Print Network [OSTI]

alternatives Murdoch scientists turning algae into fuel Pampering for camels New camel health facility Autumn 2010 Helping India Chiropractic, Nursing and Pharmacy Schools making a difference Fossil fuel

382

Classroom Vocabulary Classroom Vocabulary [msamiati wa darasani  

E-Print Network [OSTI]

] sakafu / sakafu [floor / floors] dari / dari [ceiling / ceilings] paa / paa [roof / roofs] simu / simu

383

Thermoelectric properties of chalcopyrite type CuGaTe2 and chalcostibite CuSbS2 Vijay Kumar Gudelli, V. Kanchana, G. Vaitheeswaran, A. Svane, and N. E. Christensen  

E-Print Network [OSTI]

of zT ¼ 1.4, confirming that CuGaTe2 is a promising material for high temperature thermoelectric and concentration suggests that CuSbS2 will be a good thermoelectric material at low temperatures, similarly Thermoelectric (TE) materials with potential applica- tions within power generation and refrigeration have repre

Svane, Axel Torstein

384

JOURNAL DE PHYSIQUE CoZZoque C8, suppZIment au n08, Tome 41, aoat 1980, page C8-103 NUCLEATION OF Sb-MICROCRYSTALS IN AN INERT-GAS ATMOSPHERE  

E-Print Network [OSTI]

antimony for the detection of metal clusters 5 ) . in electrical resistance, light trans- The unexpectedlySb predominantly as Sbl atoms, as distinct from Sbq clusters known to evaporate from elementary antimony. Sputtered films 0 (d 2 1000 A) exhibit an electrical re- sistance which is about one order of mag- nitude higher

Paris-Sud XI, Université de

385

Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)  

SciTech Connect (OSTI)

The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

2014-01-01T23:59:59.000Z

386

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

387

Beneficial effect of Se substitution on thermoelectric properties of Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites  

SciTech Connect (OSTI)

Skutterudite-based compounds, Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} (x=0.4, 0.5, 0.6 and y=0.0, 0.1), are synthesized by the solid state reaction and the spark plasma sintering methods, and their structure and the thermoelectric properties have been investigated systematically. It is found that Se doping results in decrease of the lattice parameter and refinement of the particle size compared with those of Se-free samples. The Se-doped samples do not yield a certain increase in the power factor, but show a significant depression in the lattice thermal conductivity. The highest dimensionless figure of merit ZT=1.09 is achieved at 800 K for the Co{sub 4}Sb{sub 11.3}Te{sub 0.6}Se{sub 0.1} compound, which is improved by 15% compared with that of Te alone doped Co{sub 4}Sb{sub 11.4}Te{sub 0.6} compound at the corresponding temperature. - Graphical abstract: The Te and Se co-doped Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites show amazingly lower thermal conductivity ({kappa}) and lattice thermal conductivity ({kappa}{sub L}) compared with those of Co{sub 4}Sb{sub 12-x}Te{sub x} skutterudites. Highlights: Black-Right-Pointing-Pointer Te and Se co-doped Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} compounds have been synthesized by the solid state reaction method. Black-Right-Pointing-Pointer Doping of Se resulted in decrease of the lattice parameter and refinement of the particle size. Black-Right-Pointing-Pointer The co-doped skutterudites show amazingly lower lattice thermal conductivity. Black-Right-Pointing-Pointer Co-doping with Te and Se is an attractive approach to enhance the TE performance of skutterudites.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Ruan, Xuefeng [Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan 430072 (China)] [Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan 430072 (China)

2012-09-15T23:59:59.000Z

388

Directing the structures of silver-antimony sulphides: A new topological variant of the [Ag{sub 5}Sb{sub 3}S{sub 8}]{sup 2-} double layer  

SciTech Connect (OSTI)

A new silver-antimony sulphide, [C{sub 6}H{sub 20}N{sub 4}][Ag{sub 5}Sb{sub 3}S{sub 8}], has been synthesised solvothermally in the presence of triethylenetetramine and characterised by single-crystal X-ray diffraction, thermogravimetry and elemental analysis. The compound crystallises in the space group P2{sub 1}/m (a=6.2778(7), b=15.8175(16) and c=12.4617(15)A and {beta}=104.561(5){sup o}) and adopts a structure in which honeycomb-like sheets of fused six-membered silver-antimony-sulphide rings are linked through Ag-S bonds to form double layers. The idealised structure can be considered to be derived from that of antifluorite and represents a second structure type for the [Ag{sub 5}Sb{sub 3}S{sub 8}]{sup 2-} double layer.

Powell, Anthony V. [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)]. E-mail: a.v.powell@hw.ac.uk; Thun, Juergen [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Chippindale, Ann M. [School of Chemistry, University of Reading, Whiteknights Reading RG6 6AD (United Kingdom)

2005-11-15T23:59:59.000Z

389

On photo-expansion and microlens formation in (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} chalcogenide glass  

SciTech Connect (OSTI)

Graphical abstract: Display Omitted Highlights: ? Photo-expansion induced by sub-band-gap photons in GeSbS glass. ? One-step microlens formation. ? The topography of the microlenses detected by AFM and DHM. ? The good mechanical characteristics of the microlenses were obtained. ? Local light-induced overheating of the glass. -- Abstract: Photo-expansion of the bulk of (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} glass induced by sub-gap photons is studied employing specifically atomic force microscopy (AFM) namely an atomic force acoustic microscopy (AFAM) and a force spectroscopy and digital holographic microscopy. The results are discussed with respect to the possible role of light induced overheating in the process of photo-expansion.

Knotek, P., E-mail: petr.knotek@upce.cz [University of Pardubice, Faculty of Chemical Technology, Studentska 573, 532 10 Pardubice (Czech Republic); Tichy, L. [Institute of Macromolecular Chemistry, Academy of Sciences of Czech Republic, v.v.i., Heyrovskeho sq. 2, 162 06 Prague (Czech Republic)] [Institute of Macromolecular Chemistry, Academy of Sciences of Czech Republic, v.v.i., Heyrovskeho sq. 2, 162 06 Prague (Czech Republic)

2012-12-15T23:59:59.000Z

390

Construction integrity assessment report (ETN-98-0005) S-Farm overground transfer (OGT) system valve pit 241-S-B to valve pit 241-S-D  

SciTech Connect (OSTI)

The S-Farm overground transfer (OGT) line will bypass the existing line(s), between valve pits 241-S-B and 241-S-D that no longer meet system requirements. The new OGT line will provide a waste transfer pipeline between these valve pits in support of saltwell pumping activities. The length of the OGT line is approximately 180 ft from pit to pit. The primary pipe is nominal 1-in. diameter stainless steel (SST) braided Ethylene-propylene Diene Monomer (EPDM) hose. The encasement pipe is a nominal 3-in., flanged, SST pipe made up of several different length pipe spool pieces (drawing H-2-829564, sh. 1 and sh. 2). The OGT line slopes from valve pit 241-S-B toward valve pit 241-S-D. At each end, the primary and encasement pipe connect to a pit entry spool piece. The pit entry spool pieces are constructed of prefabricated SST materials. These spool pieces allow for the separation of the primary and encasement pipelines after the pipes have entered the valve pits (drawing H-2-818280, sh. 2). The pit entry spool pieces also allow for leak detection of the encasement pipe at each end (drawing H-2-829564, sh. 2). The OGT encasement pipeline is supported above ground by adjustable height unistrut brackets and precast concrete bases (drawing H-2-829654, sh. 1). The pipeline is heat-traced and insulated. The heat tracing and insulation supply and retain latent heat that prevents waste solidification during transfers and provides freeze protection. The total length of the pipeline is above ground, thereby negating the need for cathodic corrosion protection. This Construction Integrity Assessment Report (CIAR) is prepared by Fluor Daniel Northwest for Numatec Hanford Corporation/Lockheed Martin Hanford Corporation, the operations contractor, and the U. S. Department of Energy, the system owner. The CIAR is intended to verify that construction was performed in accordance with the provisions of Washington Administrative Code, WAC-173-303-640 (3) (c), (e), (f) and (h).

HICKS, D.F.

1999-08-12T23:59:59.000Z

391

Metal-insulator transitions induced by doping in LaNiO{sub 3}: LaNi{sub 0.95}M{sub 0.05}O{sub 3} (M = Mo, W, Sb, Ti, Cu, Zn) perovskites  

SciTech Connect (OSTI)

Structural characterization and electronic properties of the LaNi{sub 0.95}M{sub 0.05}O{sub 3} (M = Mo, W, Sb, Ti, Cu, Zn) perovskite-like system are reported. These compounds can be regarded as being derived from LaNiO{sub 3} by partial substitution of Ni{sup 3+} in this material by M{sup 6+}, M{sup 5+}, M{sup 4+}, or M{sup 2+} formal cations, with a partial reduction of Ni{sup 3+} to Ni{sup 2+} taking place. X-ray powder diffraction data were analyzed by means of the Rietveld method and show that all the title materials present perovskite-type structure with a rhombohedral (S.G. R{bar 3}c) or orthorhombic (S.G. Pbnm) symmetry, depending on the nature of the M cation. In all cases, Ni and M cations are placed at random in octahedral B-sites of perovskite structure. Electrical resistivity measurements (four probe method) show metal-to-insulator (M-I) transitions for M = Mo, W, Ti, Cu, Zn at temperatures of about 50K and a semiconductor behavior for the Sb sample in the whole temperature range explored. Magnetic susceptibility measurements show the presence of weak ferromagnetic interactions for M = Sb and Pauli paramagnetism for the remaining compounds.

Alvarez, I.; Veiga, M.L.; Pico, C. [Univ. Complutense, Madrid (Spain)] [Univ. Complutense, Madrid (Spain)

1998-03-01T23:59:59.000Z

392

Independent and correlated composition behavior of material properties:?Application to energy band gaps for the Ga?In1-?P?As1-? and Ga?In1-?P?Sb?As1-?-? alloys  

Science Journals Connector (OSTI)

A correlated function expansion (CFE) is introduced (a) to identify the role of independent and correlated composition variations upon a desired material property, and (b) to provide an efficient means to compute the property throughout the composition space. As an example the contributions of independent and correlated composition behavior upon the principal energy band gaps for the alloys Ga?In1-?P?As1-? and Ga?In1-?P?Sb?As1-?-? are calculated and analyzed by applying the CFE to the universal tight-binding (UTB) Hamiltonian model of the alloys. The convergence properties of the CFE over the entire composition variable space (?,?,?) are examined upon including independent, pair-, and triple-correlated terms. By retaining only independent component contributions in the CFE it was possible to represent the UTB results to better than 90% accuracy for both the alloys Ga?In1-?P?As1-? and Ga?In1-?P?Sb?As1-?-?. Pair composition correlations contributed approximately 510 % to the band gaps in both alloys and for Ga?In1-?P?Sb?As1-?-? the triple correlations were at the level of ?3%. The CFE is a generic tool capable of simplifying efforts at finding desired alloy compositions for material properties.

Kyurhee Shim and Herschel Rabitz

1998-07-15T23:59:59.000Z

393

Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films  

SciTech Connect (OSTI)

A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q?=?0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.

Secor, Jeff; Zhao, Lukas; Krusin-Elbaum, Lia [The Graduate Center, CUNY, New York, New York 10016 (United States); Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Harris, Matt A.; Deng, Haiming [Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Raoux, Simone [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2014-06-02T23:59:59.000Z

394

Metal-like heat conduction in laser-excited InSb probed by picosecond time-resolved x-ray diffraction  

Science Journals Connector (OSTI)

A semiconductor (InSb) showed transient metal-like heat conduction after excitation of a dense electron-hole plasma via short and intense light pulses. A related ultrafast strain relaxation was detected using picosecond time-resolved x-ray diffraction. The deduced heat conduction was, by a factor of 30, larger than the lattice contribution. The anomalously high heat conduction can be explained once the contribution from the degenerate photocarrier plasma is taken into account. The magnitude of the effect could provide the means for guiding heat in semiconductor nanostructures. In the course of this work, a quantitative model for the carrier dynamics in laser-irradiated semiconductors has been developed, which does not rely on any adjustable parameters or ad hoc assumptions. The model includes various light absorption processes (interband, free carrier, two photon, and dynamical Burstein-Moss shifts), ambipolar diffusion, energy transport (heat and chemical potential), electrothermal effects, Auger recombination, collisional excitation, and scattering (elastic and inelastic). The model accounts for arbitrary degrees of degeneracy.

P. Sondhauss, O. Synnergren, T. N. Hansen, S. E. Canton, H. Enquist, A. Srivastava, and J. Larsson

2008-09-10T23:59:59.000Z

395

Spectroscopic Study of (two-dimensional) Molecule-based Magnets: [MII(TCNE)(NCMe)2][SbF6] (M = Fe Mn Ni)  

SciTech Connect (OSTI)

The M-[TCNE] (M = 3d metal; TCNE = tetracyanoethylene) system is one of the most interesting classes of molecule-based magnets, exhibiting a plethora of compositions and structures (inorganic polymer chains, 2D layers, 3D networks, and amorphous solids) with a wide range of magnetic ordering temperatures (up to 400 K). A systematic study of vibrational (both infrared and, for the first time, Raman) properties of the family of new TCNE-based magnets of M{sup II}(TCNE) (NCMe){sub 2}[SbF{sub 6}] [M = Mn, Fe, Ni] composition is discussed in conjunction with their magnetic behavior and newly resolved crystal structures. The vibrational properties of the isolated TCNE{sup {sm_bullet}-} anion in the paramagnetic Bu{sub 4}N [TCNE{sup {sm_bullet}-}] salt and recently characterized 2D layered magnet Fe{sup II}(TCNE)(NCMe){sub 2}[FeCl{sub 4}] are also reported for comparison. Additionally, a linear correlation between {nu}{sub c=c} (a{sub g}) frequency of the TCNE ligand and its formal charge Z (the spin density on the {pi}* orbital), Z = [1571 - {nu}{sub C=C} (ag)]/154.5 [e], is presented. It is shown that monitoring Z by Raman spectroscopy is of great use in providing information that allows understanding the peculiarity of the superexchange interaction in M-[TCNE] magnets and establishing the structure-magnetic properties correlations in this class of magnetic material.

C Olson; C Heth; S Lapidus; P Stephens; G Halder; K Pokhodnya

2011-12-31T23:59:59.000Z

396

Electronic topological transition in an n-BiSb semiconductor alloy in the quantum limit range of magnetic fields for H-parallel C{sub 2}  

SciTech Connect (OSTI)

The galvanomagnetic properties of single-crystal samples of the Bi{sub 0.93}Sb{sub 0.07} semiconductor alloy with the electron density n = 1.6 x 10{sup 17} cm{sup -3} in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity {rho} and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components {rho}{sub 22} and R{sub 32,1} have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance {rho}{sub 22}(H) for H -parallel C{sub 2} in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of secondary ellipsoids in the quantum limit magnetic fields is accompanied by the flow of electrons to the main ellipsoid; i.e., an electronic topological transition occurs from the three-valley electron spectrum to the single-valley one. After the flow stops, the Fermi energy E{sub F} increases from 18 meV to 27.8 meV. With an increase in the quantizing magnetic field, the Fermi energy of the electrons decreases both in the region of quantum oscillations of the resistance that are attributed to the electrons of the secondary ellipsoids and in the region of oscillations associated with the electrons of the main ellipsoid. The Hall coefficient R{sub 32,1} decreases in high magnetic fields; this behavior indicates the absence of the electron magnetic freezing effect.

Red'ko, N. A., E-mail: nikolaj.a.redko@mail.ioffe.ru; Kagan, V. D.; Volkov, M. P. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2010-08-15T23:59:59.000Z

397

Synthesis and structural and magnetic characterization of the frustrated magnetic system La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6}  

SciTech Connect (OSTI)

We report the synthesis of double perovskites La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6} with x=0, 1/3, 2/3 and 1 by a solid state method. Rietveld refinements of X-ray and neutron powder diffraction data show that all samples crystallize in space group P2{sub 1}/n, with almost perfect occupation of the 2d octahedral site with the transition metals, while all Sb{sup 5+} are randomly distributed in a 2c octahedral site. The saturation magnetization in hysteresis loops indicates that the samples are ferrimagnetic throughout all the series. Virgin magnetization curves lie outside hysteresis loops at low temperatures and thermal evolution of H{sub m} defined as the inflection point of these curves follows the de AlmeidaThouless dependence for x?0. This spin glass like behavior below 30 K is also supported by thermal evolution of the coercivity, which follows an exponential law typical of magnetic clusters, not found in the pure Ni{sup 2+} perovskite, x=0 extreme. - Graphical abstract: Display Omitted - Author-Highlights: We synthesized new double perovskites: La{sub 2}Ni{sub 4/3?x}Co{sub x}SbO{sub 6} (x=1/3, 2/3, 1). The cations occupying octahedral sites are highly ordered in all samples. Magnetic transition occurs as a consequence of superexchange paths. Frustration is found and attributed to competition between different interactions.

Franco, D.G., E-mail: diego.g.franco@cab.cnea.gov.ar [Laboratorio de Bajas Temperaturas, Centro Atmico Bariloche (CNEA), 8400 Bariloche, Ro Negro (Argentina); INFIQC-CONICET, Dpto. de Fsico-Qumica, Facultad de Ciencias Qumicas, Universidad Nacional de Crdoba, Ciudad Universitaria, X5000HUA Crdoba (Argentina); Carbonio, R.E. [INFIQC-CONICET, Dpto. de Fsico-Qumica, Facultad de Ciencias Qumicas, Universidad Nacional de Crdoba, Ciudad Universitaria, X5000HUA Crdoba (Argentina); Nieva, G. [Laboratorio de Bajas Temperaturas, Centro Atmico Bariloche (CNEA), 8400 Bariloche, Ro Negro (Argentina); Instituto Balseiro (CNEA-UNCuyo) Centro Atmico Bariloche, 8400 Bariloche, Ro Negro (Argentina)

2013-11-15T23:59:59.000Z

398

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect (OSTI)

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

399

Transport and mechanical property evaluation of (AgSbTe){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87, 0.90)  

SciTech Connect (OSTI)

(AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics. - Graphical Abstract: Powder X-ray diffraction of TAGS-x (x=0.80, 0.82, 0.85, 0.87 and 0.90) showing characteristic bifurcation indicative of rhombohedral structure.

Salvador, James R., E-mail: james.salvador@gm.c [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Yang, J. [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Shi, X. [Optimal, Inc. Plymouth Township, MI 48170 (United States); Wang, H.; Wereszczak, A.A. [High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2009-08-15T23:59:59.000Z

400

Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge{sub 2+x}Sb{sub 2}Te{sub 5} (x = 0,1) thin films for phase-change memory  

SciTech Connect (OSTI)

The phase-change behavior and microstructure changes of N-doped Ge{sub 3}Sb{sub 2}Te{sub 5}[N-GST(3/2/5)] and Ge{sub 2}Sb{sub 2}Te{sub 5}[GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

Cheng Limin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 10080 (China); Wu Liangcai; Song Zhitang; Rao Feng; Peng Cheng; Yao Dongning; Liu Bo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xu Ling [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

2013-01-28T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi{sub 0.88}Sb{sub 0.12} single crystals  

SciTech Connect (OSTI)

The components of resistivity ({rho}{sub ij}), Hall coefficient (R{sub ijk}), and magnetoresistance ({rho}{sub ij,kl}) of n-Bi{sub 0.88}Sb{sub 0.12} single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as m{sub 2}*/m{sub l}* = 3 and b Almost-Equal-To 0.16, respectively.

Tairov, B. A., E-mail: btairov@physics.ab.az; Ibragimova, O. I., E-mail: ofeliya_i@physics.ab.az; Rahimov, A. H. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Brazis, R., E-mail: brazis@pfi.lt [Semiconductor Physics Institute (Lithuania)

2011-02-15T23:59:59.000Z

402

Magnetic and transport properties of transparent SrSn{sub 0.9}Sb{sub 0.05}Fe{sub 0.05}O{sub 3} semiconductor films  

SciTech Connect (OSTI)

The effect of antimony doping on the structural, magnetic, and electrical properties of transparent SrSn{sub 0.9}Sb{sub 0.05}Fe{sub 0.05}O{sub 3} films synthesized by RF sputtering on oxidized Si and quartz substrates has been investigated. A reduction in electrical resistivity by two orders of magnitude compared to 5% Fe doped SrSnO{sub 3} film was observed. The electrical conductivity behavior has been analyzed using the Mott's Variable range hopping model. The nature of magnetic ordering were investigated by field cooled (FC) and zero field cooled (ZFC) magnetization measurements. The applicability of models based on oxygen vacancies to explain the magnetic ordering present in the sample has been discussed.

Prathiba, G.; Harish Kumar, N. [Advanced Magnetic Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Venkatesh, S. [Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005 (India); Kamala Bharathi, K. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

2011-04-01T23:59:59.000Z

403

Advance Patent Waiver W(A)2012-019  

Broader source: Energy.gov [DOE]

This is a request by GE ENERGY for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007902.

404

Advance Patent Waiver W(A)2011-070  

Broader source: Energy.gov [DOE]

This is a request by CASCADE ENGINEERING INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005440.

405

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

M.J. , Baum, S.R. , Bjornstad, B.N. , R.E. , Clayton, R.E. ,M.J. , Valenta, M.M. , Bjornstad, B.N. , Clayton, R.E. ,R.J. , Schaef, H.T. , Bjornstad, B.N. , Williams, B.A. ,

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

406

Advance Patent Waiver W(A)2005-054  

Broader source: Energy.gov [DOE]

This is a request by SIEMEN for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42444.

407

Advance Patent Waiver W(A)2005-025  

Broader source: Energy.gov [DOE]

This is a request by G.E. NUCLEAR ENERGY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14635

408

Advance Patent Waiver W(A)2005-026  

Broader source: Energy.gov [DOE]

This is a request by G.E. NUCLEAR ENERGY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14036.

409

Advance Patent Waiver W(A)2010-004  

Broader source: Energy.gov [DOE]

This is a request by GE-HITACHI NUCLEAR ENERGY AMERICAS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC52-09N29626

410

RAPID/Roadmap/6-WA-d | Open Energy Information  

Open Energy Info (EERE)

of a Hydraulic Project Approval Permit issued by the Washington State Department of Fish and Wildlife. State waters include all marine waters and fresh waters of the state,...

411

RAPID/Roadmap/12-WA-a | Open Energy Information  

Open Energy Info (EERE)

take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064....

412

RAPID/Roadmap/7-WA-a | Open Energy Information  

Open Energy Info (EERE)

following state agencies: Department of Commerce, Department of Ecology, Department of Fish and Wildlife, Department of Natural Resources, and Utilities and Transportation...

413

RAPID/Roadmap/3-WA-d | Open Energy Information  

Open Energy Info (EERE)

payments as determined by WSDNR, or as agreed on by the lessee and WSDNR; and Other terms and conditions as WSDNR deems advisable. RCW 79.13.030. WSDNR may enter into a lease,...

414

Camps program WaIVEr Form partICIpant  

E-Print Network [OSTI]

____________________________ First name_________________ Home phone _________________ Work phone _________________ Cell phone _________________ Work phone _________________ Cell phone_________________ ParticiPant medical information BC care card_________________ Emergency contact: Last name____________________________ First name_________________ Home phone

Kavanagh, Karen L.

415

Advance Patent Waiver W(A)2012-011  

Broader source: Energy.gov [DOE]

This is a request by RAYMOND TINNERMAN MANUFACTURING INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005438.

416

Advance Patent Waiver W(A)2010-055  

Broader source: Energy.gov [DOE]

This is a request by SUN POWER CORPORATIO for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002066

417

Advance Patent Waiver W(A)2006-014  

Broader source: Energy.gov [DOE]

This is a request by PPG INDUSTRIES, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-04GO14044

418

Advance Patent Waiver W(A)2011-049  

Broader source: Energy.gov [DOE]

This is a request by DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003916.

419

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA  

Broader source: Energy.gov [DOE]

This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency.

420

Advance Patent Waiver W(A)2011-026  

Broader source: Energy.gov [DOE]

This is a request by US SYNTHETIC CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003633.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

RAPID/Roadmap/18-WA-a | Open Energy Information  

Open Energy Info (EERE)

173-360. Washington defines an "Underground Storage Tank" as any one or combination of tanks (including underground pipes connected thereto) that is used to contain an...

422

Advance Patent Waiver W(A)2008-004  

Broader source: Energy.gov [DOE]

This is a request by HUNTSMAN ADVANCED MATERIALS AMERICANS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17012

423

EIS-0325: Schultz-Hanford Area Transmission Line Project, WA  

Broader source: Energy.gov [DOE]

BPA proposes to construct a new 500-kilovolt (kV) transmission line in central Washington. This project would increase transmission system capacity north of Hanford.

424

RAPID/Roadmap/13-WA-a | Open Energy Information  

Open Energy Info (EERE)

Shoreline Management Act of 1971 (RCW 90.58) 16 USC 1456 15 CFR 930 State Environmental Policy Act (SEPA) Clean Water Act RCW 90.48 Clean Air Act WAC 143-400 Energy...

425

Advance Patent Waiver W(A)2005-049  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN AIR LIQUIDE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41586.

426

Advance Patent Waiver W(A)2011-028  

Broader source: Energy.gov [DOE]

This is a request by PPG INDUSTRIES, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004736.

427

Advance Patent Waiver W(A)2011-003  

Broader source: Energy.gov [DOE]

This is a request by PPG INDUSTRIES, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003170.

428

Department of Biochemistry Seattle, WA 98195-7350  

E-Print Network [OSTI]

M CaCl2 500 mM Na2HPO4 14.3 M -mercaptoethanol 500 mM EDTA 500 mM NaH2PO4 BUFFERS Note: For all mM Imidazole 100 µL 1 M 2 mM CaCl2 200 µL 1 M 10 mM -mercaptoethanol 69.6 µL 14.3 M Split into two

Dunham, Maitreya

429

18130 Midvale Ave. N., Suite C Shoreline, WA 98133  

E-Print Network [OSTI]

: Northwest Power Planning Council and Bonneville Power Administration Re: Regional Process Proposal September by Bonneville Power Administration beyond the year 2006. Our proposal is designed to be consistent with the five different from this document. We encourage Bonneville and the Power Planning Council to seek their input

430

Advance Patent Waiver W(A)2011-029  

Broader source: Energy.gov [DOE]

This is a request by W. R. GRACE COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FOA-0000324.

431

Advance Patent Waiver W(A)2013-014  

Broader source: Energy.gov [DOE]

This is a request by W.R GRACE AND CO for a DOE waiver of domestic and foreign patent rights under agreement DE- EE0005991.

432

Advance Patent Waiver W(A)2011-008  

Broader source: Energy.gov [DOE]

This is a request by CERAMATEC, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000395.

433

C:\\Temp_jhd\\spacers\\spacers_wa_2014.prn  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wautoma Central Ferry Monroe Lower Monumental 2014 Spacer Damper Replacement Projects * BPA Substation I Non-BPA Substation Spacer Damper Replacement Segments, 500kV BPA...

434

RAPID/Roadmap/6-WA-a | Open Energy Information  

Open Energy Info (EERE)

Click to View Fullscreen Permit Overview The Washington State Department of Transportation grants permits for vehicles and loads which exceed the limits outlined in the...

435

Title: Advance Patent Waiver W(A)2011-041  

Broader source: Energy.gov [DOE]

This is a request by GENERAL MOTOR for a DOE waiver of domestic and foreign patent rights under agreement DE-AC36-08GO28308.

436

Transit-Oriented Communities: a Blueprint for Bellingham, WA.  

E-Print Network [OSTI]

to plan implementation), Sustainable Design Studio (exploring green building technologies, and national and international sustainable development goals and ideals. Because the problems of the participating classes further build upon the planning concepts developed in planning studio. The program

Zaferatos, Nicholas C.

437

Advance Patent Waiver W(A)2010-049  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43088

438

Advance Patent Waiver W(A)2010-019  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18063

439

Advance Patent Waiver W(A)2009-020  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-NT0005341

440

Advance Patent Waiver W(A)2005-032  

Broader source: Energy.gov [DOE]

This is a request by HONEYWELL INTERNATIONAL, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-02AL67624.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Advance Patent Waiver W(A)2010-057  

Broader source: Energy.gov [DOE]

This is a request by HONEYWELL INTERNATIONAL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003840

442

Advance Patent Waiver W(A)2008-032  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43279

443

Advance Patent Waiver W(A)2006-003  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42418

444

Advance Patent Waiver W(A)2009-058  

Broader source: Energy.gov [DOE]

This is a request by SOLAR TURBINES INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-09NT05873

445

Publications aWaRds,publications,pRoceedings,  

E-Print Network [OSTI]

, "Measurement and analysis of titanium monoxide spectra in laser-induced plasma", Optics Letters 37, Issue 24: Christian G. Parigger, Alexander C. Woods, and Mohammad R. Rezaee, "Atomic Hydrogen and Molecular Carbon Spectra of Aluminum Monoxide in a Solid Propellant Flame", International Review of Atomic and Molecular

Davis, Lloyd M.

446

Advance Patent Waiver W(A)2012-004  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRIC GLOBAL REARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FO0007514.

447

EIS-0189: Tank Waste Remediation System (TWRS), Richland, WA (Programmatic)  

Broader source: Energy.gov [DOE]

This environmental impact statement evaluates the Department of Energy (DOE)'s, in cooperation with the Washington State Department of Ecology (Ecology), decisions on how to properly manage and dispose of Hanford Site tank waste and encapsulated cesium and strontium to reduce existing and potential future risk to the public, Site workers, and the environment. The waste includes radioactive, hazardous, and mixed waste currently stored in 177 underground storage tanks, approximately 60 other smaller active and inactive miscellaneous underground storage tanks (MUSTs), and additional Site waste likely to be added to the tank waste, which is part of the tank farm system. In addition, DOE proposes to manage and dispose of approximately 1,930 cesium and strontium capsules that are by-products of tank waste. The tank waste and capsules are located in the 200 Areas of the Hanford Site near Richland, Washington.

448

RAPID/Roadmap/11-WA-c | Open Energy Information  

Open Energy Info (EERE)

25-48-020. On Washington state lands it is unlawful for any entity of the state or a political subdivision to knowingly remove, alter, dig into, or excavate by use of any...

449

RAPID/Roadmap/9-WA-c | Open Energy Information  

Open Energy Info (EERE)

in the EIS may occur, if the proposal were implemented; Each local agency or political subdivision whose public services would be changed as a result of implementation of...

450

RAPID/Roadmap/9-WA-b | Open Energy Information  

Open Energy Info (EERE)

jurisdiction, the department of ecology, and affected tribes and each local agency or political subdivision whose public services would be changed as a result of implementation of...

451

Advance Patent Waiver W(A)2008-043  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43240

452

Advance Patent Waiver W(A)2008-005  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43243

453

Advance Patent Waiver W(A)2009-064  

Broader source: Energy.gov [DOE]

This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000303

454

Advance Patent Waiver W(A)2010-003  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRICC GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000784

455

Advance Patent Waiver W(A)2011-002  

Broader source: Energy.gov [DOE]

This is a request by APPLIED MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003838.

456

Issaquah Highlands Zero Energy Affordable Housing (WA) - YWCA  

SciTech Connect (OSTI)

The YWCA Family Village at Issaquah, Net Zero Energy Approach Project provides a compelling model for how the nation can seriously respond to the critical need for affordable housing while advancing environmental standards and reducing economic inequities. Affordable housing developments for vulnerable members of the community and in today's workforce cannot overlook issues, such as climate impact, energy security and water conservation. This project's advanced building design was based on the goal of creating a 100 year building that could achieve net zero energy usage if funding had been available to support the final pieces of energy generation. The team worked closely with community stakeholders to ensure the baseline components of high quality and efficient building envelopes along with efficient systems were in place to set the stage for future incorporation of energy generating systems such as solar panels. As built, these 146 homes, large child care center and community services areas are proving the value of investing upfront for the benefit of future generations by reducing ongoing utility and maintenance costs with an eye toward environmental stewardship and community/resident education. The DOE award helped fund two critical energy conservation features for the YWCA Family Village at Issaquah campus: 1) super-insulated roof assembly with a continuous air barrier and 2) domestic hot water preheat system. The roof system at the YWCA Family Village at Issaquah project was built to include 6" of Polyiso rigid insulation (R-38) on top of the roof sheathing to provide a super-insulated roof in line with the other green features of the project. Placing the rigid insulation on top of the roof sheathing allows the building to have a continuous layer of insulation and provides a continuous air barrier. The domestic hot water preheat system includes flat panel arrays on roofs of the buildings that heat the water using solar power, which reduces the amount of heating needed from the gas-fired boilers. The flat-plate panels on the roof of the building heats the water using solar power. A heat exchanger transfers heat from water warmed by the panels to potable water for the units. The warmed potable water mixes with the tap water supply to create hot water for the buildings. This boost of water warmed by the solar panels reduces the heating costs for eh project by reducing the need to heat the water via gas-fired boilers. Both of these energy upgrades were chosen because they significantly improve the energy efficiency for the life of the building and are reducing monthly utility costs for both the residents and the owners. Since the owner is a not-for-profit dedicated to long-term ownership and serving households with very-low and low-incomes, the costs savings will ultimately benefit current and future residents as the dollars saved will either be realized directly by the resident or be invested in the project. Technically, the design of these systems is easily understood and the principles could be applied to other projects. The incremental costs depend largely on the existing market rate of the components-none of which are considered "cutting edge" so a market does currently exist.

Tom, Vincent; DeRobbio, Wendy; Hall, Linda

2012-04-30T23:59:59.000Z

457

RAPID/Roadmap/14-WA-e | Open Energy Information  

Open Energy Info (EERE)

detailed engineering and environmental reports. The WSDE may require the developer to conduct studies to gather more information about their processes and discharges before an...

458

Advance Patent Waiver W(A)2008-033  

Broader source: Energy.gov [DOE]

This is a request by Whitefox Technologies, Limited for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43090

459

Advance Patent Waiver W(A)2011-024  

Broader source: Energy.gov [DOE]

This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000538.

460

Advance Patent Waiver W(A)2011-036  

Broader source: Energy.gov [DOE]

This is a request by HONEYWELL LABORATORIES for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000544.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Advance Patent Waiver W(A)2011-040  

Broader source: Energy.gov [DOE]

This is a request by SYPRIS ELECTRONICS for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000543.

462

Advance Patent Waiver W(A)2011-020  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003403.

463

Advance Patent Waiver W(A)2012-027  

Broader source: Energy.gov [DOE]

This is a request by DAIMIER TRUCKS NORTH AMERICA for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0003348.

464

Advance Patent Waiver W(A)2011-022  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRICC CO for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003839.

465

Advance Patent Waiver W(A)2007-014  

Broader source: Energy.gov [DOE]

This is a request by DONALDSON COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42861

466

Advance Patent Waiver W(A)2011-023  

Broader source: Energy.gov [DOE]

This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000537.

467

Advance Patent Waiver W(A)2005-027  

Broader source: Energy.gov [DOE]

This is a request by WESTINGHOUSE ELECTRIC CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14636.

468

Advance Patent Waiver W(A)2008-027  

Broader source: Energy.gov [DOE]

This is a request by ALCOA, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO180278

469

Advance Patent Waiver W(A)2010-045  

Broader source: Energy.gov [DOE]

This is a request by LUMMUS COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003457

470

Advance Patent Waiver W(A)2012-002  

Broader source: Energy.gov [DOE]

This is a request by NOVOZYMES NORTH AMERICA, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007741.

471

Advance Patent Waiver W(A)2005-004  

Broader source: Energy.gov [DOE]

This is a request by ALSTO for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-03NT41986.

472

Advance Patent Waiver W(A)2011-046  

Broader source: Energy.gov [DOE]

This is a request by ALSTOM GRID INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000551.

473

Advance Patent Waiver W(A)2008-044  

Broader source: Energy.gov [DOE]

This is a request by ALSTOM POWER, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43095

474

RAPID/Roadmap/8-WA-a | Open Energy Information  

Open Energy Info (EERE)

for the project or ownership of land on which the project will be located; Information or data that may be available at a later date; A summary and timeline of any initial...

475

Advance Patent Waiver W(A)2012-020  

Broader source: Energy.gov [DOE]

This is a request by CLIPPER WINDPOWER LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005141.

476

Advance Patent Waiver W(A)2011-065  

Broader source: Energy.gov [DOE]

This is a request by OWENS CORNING for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005338.

477

Microsoft Word - WA Parish_MAP_Final.docx  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cost-shared funding to NRG Energy, Inc. (NRG) for the proposed project under DOE's Clean Coal Power Initiative (CCPI) Program in a Record of Decision signed on May 8, 2013 and...

478

Advance Patent Waiver W(A)2013-005  

Broader source: Energy.gov [DOE]

This is a request by STATOIL WIND US LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005988.

479

EIS-0330: Wallula Power Project, Walla Walla County, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes DOE's proposal to construct, operate, maintain, and decontaminate and decommission two depleted uranium hexafluoride (DUF 6) conversion facilities, at Portsmouth, Ohio, and Paducah, Kentucky.

480

Advance Patent Waiver W(A)2011-013  

Broader source: Energy.gov [DOE]

This is a request by UNITED TECHNOLOGIES RESEARCH CENTER for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003953.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Advance Patent Waiver W(A)2009-007  

Broader source: Energy.gov [DOE]

This is a request by UNITED TECHNOLOGIES CORP for a DOE waiver of domestic and foreign patent rights under agreement DE-AC02-05CH11231

482

Advance Patent Waiver W(A)2009-006  

Broader source: Energy.gov [DOE]

This is a request by UNITED TECHNOLOGIES CORP for a DOE waiver of domestic and foreign patent rights under agreement DE-AC02-05CH11231

483

EIS-0244: Plutonium Finishing Plant Stabilization, Hanford Site, Richland, WA  

Broader source: Energy.gov [DOE]

This EIS evaluates the impacts on the human environment of: Stabilization of residual, plutonium-bearing materials at the PFP Facility to a form suitable for interim storage at the PFP Facility. Immobilization of residual plutonium-bearing materials at the PFP Facility. Removal of readily retrievable, plutonium-bearing materials left behind in process equipment, process areas, and air and liquid waste management systems as a result of historic uses.

484

Advance Patent Waiver W(A)2006-019  

Broader source: Energy.gov [DOE]

This is a request by NALCO CHEMICAL CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06FT42721

485

INSTABILITY C S Bretherton, University of Washington, Seattle, WA,  

E-Print Network [OSTI]

on small- amplitude (linear) two-dimensional inviscid hydro- static motions of a nonrotating atmosphere are neglected. Classically, a linear stability analysis of a small-amplitude wave is used to assess

Bretherton, Chris

486

RAPID/Roadmap/1-WA-a | Open Energy Information  

Open Energy Info (EERE)

Contact" button in the form to provide the contact info, and use the "Add RAPID Roadmap Section" button to provide the roadmap section the contact is associated with. This page's...

487

Advance Patent Waiver W(A)2008-013  

Broader source: Energy.gov [DOE]

This is a request by SANYO ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17050

488

Advance Patent Waiver W(A)2005-033  

Broader source: Energy.gov [DOE]

This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-AC26-99NT40675.

489

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA  

Broader source: Energy.gov [DOE]

DOE announces its intent to prepare an EIS for the Acquisition of a Natural Gas Pipeline and Natural Gas Utility Service at the Hanford Site, Richland, Washington (Natural Gas Pipeline or NGP EIS), and initiate a 30-day public scoping period.

490

RAPID/Roadmap/14-WA-c | Open Energy Information  

Open Energy Info (EERE)

is required, the developer must also obtain a NPDES Waste Discharge Permit or State Wastewater Discharge Permit.( Chapter 173-216 WAC or Chapter 173-226 WAC). The State...

491

Arc magmatism at different crustal levels, North Cascades, WA  

E-Print Network [OSTI]

The mechanisms of magma ascent and emplacement inferred from study of intrusive complexes have long been the subject of intense debate. Current models favor incremental construction, but much of this work has been focused ...

Shea, Erin Kathleen McLaren

2014-01-01T23:59:59.000Z

492

RAPID/Roadmap/3-WA-c | Open Energy Information  

Open Energy Info (EERE)

is required for occupancy of a highway right of way by facilities, including private lines. WAC 468-34-160. The process is governed by the Washington State Department of...

493

Advance Patent Waiver W(A)2013-019  

Broader source: Energy.gov [DOE]

This is a request by CREE, INC. for a DOE waiver of domestic and foreign patent rights under agreement NGB-3-23028-01.

494

Advance Patent Waiver W(A)2007-005  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-06GO16054

495

Advance Patent Waiver W(A)2012-003  

Broader source: Energy.gov [DOE]

This is a request by CREE for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FOA-0000439.

496

Advance Patent Waiver W(A)2007-021  

Broader source: Energy.gov [DOE]

This is a request by SUN POWER CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-PS36-06GO96034

497

Advance Patent Waiver W(A)2011-059  

Broader source: Energy.gov [DOE]

This is a request by CARLISLE CONSTRUCTION MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005435.

498

Advance Patent Waiver W(A)2008-020  

Broader source: Energy.gov [DOE]

This is a request by GE GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17045

499

Advance Patent Waiver W(A)2009-068  

Broader source: Energy.gov [DOE]

This is a request by United Solar Systems Corp. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17053

500

Advance Patent Waiver W(A)2011-035  

Broader source: Energy.gov [DOE]

This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004739.