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Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Namibia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus AreaDataBus Jump to:NSTARNamibia-UNEP Green EconomyNamibia:

2

WA_97_032_CHEMICAL_INDUSTRY_ENVIROMENTAL_TECHNOLOGY_PROJECTS...  

Broader source: Energy.gov (indexed) [DOE]

2CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJEC...

3

WA_00_030_ASE_AMERICAS_Request_to_Assign_Title_to_Waiver-Inv...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA03032RWESCHOTTSOLARINCWaiverof...

4

WA_1995_018_OPTICAL_COATING_LABORATORY_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICAL...

5

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04028AIRPRODUCTSANDCHEMICAL...

6

WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...  

Broader source: Energy.gov (indexed) [DOE]

WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

7

WA_1994010__SCHWITZER_U.S._INC_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1994007KYOCERAINDUSTRIALCERAMICSCORPORATIONWaivero.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA02028TRANECOWaiverofDomesti...

8

WA_04_009_ROCKWELL_SCIENTIFIC_CO_Wailve_of_Domestic_And_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA00030ASEAMERICASRequesttoAssign...

9

WA_1995_019_DONNELLY_CORPORATION_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA00030ASEAMERICASRequesttoAssignTitletoWaiver-Inv.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA04009ROCKWELLSCIENTIFICCOWailve...

10

WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

11

WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

12

WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

13

WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

14

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

15

WA_00_007_COMBUSTION_ENGINEERING_INC_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

07COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomestica...

16

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

17

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

18

MHK Projects/GPP Namibia | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowell Point, Alaska:Luz IILynnM Setek8512GCKGPP Namibia <

19

Impact of HIV/AIDS on the Agricultural Sector in Northern Namibia  

E-Print Network [OSTI]

In agrarian societies, HIV/AIDS extends far beyond the realm of healthcare into agricultural production and food security as well. Namibia is a developing country with a large portion of its population involved in agriculture; the average HIV...

Carter, Charles Russell

2011-02-22T23:59:59.000Z

20

WA_98_016_ABB_POWER_T_AND_D_COMPANY_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2011-046 Advance Patent Waiver W(A)2009-016 WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WA_04_085_THE_BOEING_COMPANY_Waiver_of_domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2010-018 Advance Patent Waiver W(A)2007-012 WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand...

22

WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

23

Advance Patent Waiver W(A)2005-006 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

24

PO Box 2349 White Salmon, WA 98672  

E-Print Network [OSTI]

PO Box 2349 White Salmon, WA 98672 509.493.4468 www.newbuildings.org COMMERCIAL ROOFTOP HVAC ENERGY from utility-sponsored field service measures on small (typically 3-10 tons) commercial rooftop unitary utility-funded RTU service programs. New Buildings Institute (NBI) staff has been managing the research

25

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

26

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

27

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Broader source: Energy.gov (indexed) [DOE]

15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

28

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

29

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

30

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Broader source: Energy.gov (indexed) [DOE]

1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

31

WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

32

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

COMPANYWaiverofDomesticandForeign.pdf More Documents & Publications WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA98008GENERALELECTRICCOMPANYWaive...

33

WA_03_021_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Broader source: Energy.gov (indexed) [DOE]

1DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRight...

34

WA_04_082_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Broader source: Energy.gov (indexed) [DOE]

82DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRigh...

35

WA_04_025_AIR_LIQUIDE_AMERICA_Waiver_of_Patent_Rights_under_...  

Broader source: Energy.gov (indexed) [DOE]

25AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsund...

36

WA_1993_003_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

3003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandFor...

37

WA_1994_011_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

1EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

38

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

34NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFo...

39

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

40

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

WA_04_080_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Patent_R...  

Broader source: Energy.gov (indexed) [DOE]

80HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPaten...

42

Knowing and deciding: participation in conservation and development initiatives in Namibia and Argentina   

E-Print Network [OSTI]

’ in Namibia and the Alto Bermejo Project in Argentina. The concept of sustainability – of living in a way that meets both current and future needs – has led, on a global scale, to a re-casting of the relationship between conservation and development as one...

Newsham, Andrew

2007-01-01T23:59:59.000Z

43

,"Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Sumas, WA...

44

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION...  

Broader source: Energy.gov (indexed) [DOE]

it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination Categorical Exclusion Reviewer's...

45

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-08 April 2015: Fitch Ratings assigns 'AA' ratings to the following Energy...

46

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergyCTBarreis aCallahanWind FarmAddSRML Map Files Jump to:WA Jump to:

47

Advance Patent Waiver W(A)2010-042 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2010-042 More Documents & Publications Advance Patent Waiver W(A)2005-023 WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf ClassWaiverWC-2003-001.pdf...

48

Advance Patent Waiver W(A)2012-003 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2012-003 More Documents & Publications Advance Patent Waiver W(A)2013-019 Class Patent Waiver W(C)2012-003 WA02048EATONCORPORATIONWaviverofPatentRightsUnderA...

49

waTer economics. environmenTand Policy  

E-Print Network [OSTI]

41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

Botea, Adi

50

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Broader source: Energy.gov (indexed) [DOE]

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

51

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

52

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Broader source: Energy.gov (indexed) [DOE]

POWERWaiverofPatentRightsinPerformance.pdf More Documents & Publications WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99022AIRPRODUCTSANDCHEMICAL...

53

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Broader source: Energy.gov (indexed) [DOE]

2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

54

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

2FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO...

55

WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...  

Broader source: Energy.gov (indexed) [DOE]

18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

56

WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

IRTECHNOLOGIESWaiverofDomesticandFor.pdf More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02021H2GENINNOVATIONSWaiverof...

57

WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...  

Broader source: Energy.gov (indexed) [DOE]

24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

58

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Broader source: Energy.gov (indexed) [DOE]

1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

59

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Broader source: Energy.gov (indexed) [DOE]

2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

60

WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...  

Broader source: Energy.gov (indexed) [DOE]

01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Broader source: Energy.gov (indexed) [DOE]

04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

62

WA_04_074_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_I...  

Broader source: Energy.gov (indexed) [DOE]

74EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeig...

63

WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A...  

Broader source: Energy.gov (indexed) [DOE]

48EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnde...

64

WA_1994_017_GOLDEN_TECHNOLOGIES_COMPANY_Waiver_of_Domestic_a...  

Broader source: Energy.gov (indexed) [DOE]

for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994014GOLDENTECHNOLOGIESCOMPA...

65

WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_...  

Broader source: Energy.gov (indexed) [DOE]

59EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUnder...

66

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

67

Earth Planets Space, 52, 329336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system  

E-Print Network [OSTI]

Earth Planets Space, 52, 329­336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system with special reference to loss of magnetization after core recovery Toshitsugu Yamazaki1 , Peter A Magnetism, University of Minnesota, Minneapolis, MN 55455-0128, U.S.A. 3Hawaii Institute of Geophysics

Yamazaki, Toshitsugu

68

STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE OF  

E-Print Network [OSTI]

STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE´S***, and DANIEL P. SCHRAG* ABSTRACT. Uncertainties in the number and age of glacial deposits within the Port architecture of the Port Nolloth Group. Particularly, we have distinguished an additional glacial deposit

Schrag, Daniel

69

RAPID/Roadmap/19-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change9-WA-e

70

RAPID/Roadmap/3-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access Overview 3-WA-b

71

RAPID/Roadmap/3-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land AccessWA-e Access

72

RAPID/Roadmap/4-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State Exploration Process 4-WA-a State

73

RAPID/Roadmap/6-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bc <6-WA-a

74

RAPID/Roadmap/6-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bcRAPID/Roadmap/6-WA-d <

75

RAPID/Roadmap/9-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc <9-FD-aa9-WA-a

76

RAPID/Roadmap/9-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc9-WA-c State

77

Advance Patent Waiver W(A)2009-039 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Advance Patent Waiver W(A)2010-007 Advance Patent Waiver W(A)2012-034 Stabilized Lithium Metal Powder, Enabling Material and Revolutionary Technology for High Energy Li-ion...

78

WA_00_013_GENECOR_INTERNATIONAL_Waiver_of_US_Competitiveness...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofUSCompetitiveness.pdf More Documents & Publications U.S. Biofuels Industry: Mind the Gap Advance Patent Waiver W(A)2008-045 WA01008NOVOZYMEBIOTECHWaiverofDomesti...

79

carleton universityottaWa, canaDa international  

E-Print Network [OSTI]

carleton universityottaWa, canaDa international aDmissions 2014 #12;Carleton University provides high-quality education to students from Canada and around the world. We offer a wide range of programs and be a part of this extraordinary university! Wonderful country The United Nations consistently ranks Canada

Dawson, Jeff W.

80

Computer Science & Engineering Box 352350 Seattle, WA 98195-2350  

E-Print Network [OSTI]

Computer Science & Engineering #12;Box 352350 Seattle, WA 98195-2350 Nonprofit Org US Postage PAID in the Computer Science Department. He is a superb researcher in the design of interactive, visual data, Carnegie Mellon University's Finmeccanica Associate Professor in the School of Computer Science, is widely

Borenstein, Elhanan

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

EIS-0397: Lyle Falls Fish Passage Project, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

82

Transport properties in AlInSb/InAsSb heterostructures  

SciTech Connect (OSTI)

Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1?y}Sb/InAs{sub 1?x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37?000 cm{sup 2}/V s is attainable in 15?nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

Zhang, Yuwei; Zhang, Yang, E-mail: zhang-yang@semi.ac.cn; Wang, Chengyan; Zeng, Yiping [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2013-12-28T23:59:59.000Z

83

Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice  

E-Print Network [OSTI]

of Western Australia, Crawley, WA 6009, Australia J. B. Rodriguez, E. Plis, and S. Krishna Center for High, The University of Western Australia, Crawley, WA 6009, Australia Received 25 October 2007; accepted 7 January temperature studies in the range 50­300 K show that the carrier is associated with an activation energy of 0

Krishna, Sanjay

84

Electrochemical Insertion/extraction of Lithium in Multiwall Carbon Nanotube/Sb and SnSb?.? Nanocomposites  

E-Print Network [OSTI]

Multiwall carbon nanotubes (CNTs) were synthesized by catalytic chemical vapor deposition of acetylene and used as templates to prepare CNT-Sb and CNT-SnSb?.? nanocomposites via the chemical reduction of SnCl? and SbCl? ...

Chen, Wei Xiang

85

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

86

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect (OSTI)

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

87

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

88

WA_1993_022_NORTON_COMPANY_Waiver_of_Domestic_and_Foreign_Ri...  

Broader source: Energy.gov (indexed) [DOE]

Golden Technologies Company, Inc. Request for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

89

Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide-area algorithms for  

E-Print Network [OSTI]

- 1 - Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide the critical areas automatically by using the synchrophasors, and proceed to mitigate the instability

90

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunways JV Jump to: navigation, search Name: BayWa

91

RAPID/Roadmap/12-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a State12-ID-a12-WA-a Live Wildlife

92

RAPID/Roadmap/12-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a State12-ID-a12-WA-a Live

93

RAPID/Roadmap/13-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a State Land UseWA-a <

94

RAPID/Roadmap/14-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-c

95

RAPID/Roadmap/14-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-cd <

96

RAPID/Roadmap/14-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-cd <e

97

RAPID/Roadmap/18-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎ |18-MT-b8-WA-a Underground

98

RAPID/Roadmap/18-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎ |18-MT-b8-WA-a

99

RAPID/Roadmap/19-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎g <RAPID/Roadmap/19-WA-a

100

RAPID/Roadmap/19-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change of

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

RAPID/Roadmap/19-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change

102

RAPID/Roadmap/19-WA-f | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or

103

RAPID/Roadmap/3-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access Overview

104

RAPID/Roadmap/3-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access

105

RAPID/Roadmap/6-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bc

106

RAPID/Roadmap/7-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e BLM/CEC7-OR-d

107

RAPID/Roadmap/8-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc < RAPID‎

108

RAPID/Roadmap/9-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc

109

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

110

DWPF simulant CPC studies for SB8  

SciTech Connect (OSTI)

The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing recommendations for DWPF along with some data related to Safety Class documentation at DWPF. Some significant observations regarding SB8 follow: Reduced washing in Tank 51 led to an increase in the wt.% soluble solids of the DWPF feed. If wt.% total solids for the SRAT and SME product weren’t adjusted upward to maintain insoluble solids levels similar to past sludge batches, then the rheological properties of the slurry went below the low end of the DWPF design bases for the SRAT and SME. Much higher levels of dissolved manganese were found in the SRAT and SME products than in recent sludge batches. Closed crucible melts were more reduced than expected. The working hypothesis is that the soluble Mn is less oxidizing than assumed in the REDOX calculations. A change in the coefficient for Mn in the REDOX equation was recommended in a separate report. The DWPF (Hsu) stoichiometric acid equation was examined in detail to better evaluate how to control acid in DWPF. The existing DWPF equation can likely be improved without changing the required sample analyses through a paper study using existing data. The recommended acid stoichiometry for initial SB8 SRAT batches is 115-120% stoichiometry until some processing experience is gained. The conservative range (based on feed properties) of stoichiometric factors derived in this study was from 110-147%, but SRNL recommends using only the lower half of this range, 110-126% even after initial batches provide processing experience. The stoichiometric range for sludge-only processing appears to be suitable for coupled operation based on results from the run in the middle of the range. Catalytic hydrogen was detectable (>0.005 vol%) in all SRAT and SME cycles. Hydrogen reached 30-35% of the SRAT and SME limits at the mid-point of the stoichiometry window (bounding noble metals and acid demand).

Koopman, D. C.; Zamecnik, J. R.

2013-06-25T23:59:59.000Z

111

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network [OSTI]

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

112

SB 375 IMPLEMENTATION: FROM PLAN TO REALITY  

E-Print Network [OSTI]

Development Cross-Agency Facilitation and Coordination Funding and Support for Sustainable Communities sustainable communities in a post-SB 375 world. · Urban Greening: $41.5 million in capital projects and plans Planning - Guidance documents - Metrics and indicators - Connecting dots across state agencies - Building

California at Davis, University of

113

Thermoelectric properties of ZnSb films grown by MOCVD  

SciTech Connect (OSTI)

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

Venkatasubramanian, R.; Watko, E.; Colpitts, T.

1997-07-01T23:59:59.000Z

114

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

115

DWPF Simulant CPC Studies For SB8  

SciTech Connect (OSTI)

Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected during SME processing. Mercury behavior was consistent with that seen in previous SRAT runs. Mercury was stripped below the DWPF limit on 0.8 wt% for all runs. Rheology yield stress fell within or below the design basis of 1-5 Pa. The low acid Tank 40 run (106% acid stoichiometry) had the highest yield stress at 3.78 Pa.

Newell, J. D.

2013-09-25T23:59:59.000Z

116

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

117

SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations  

E-Print Network [OSTI]

surveys; routine activities that do not affect the integrity of the well or the formation; the removal SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations Page 1 of 13 SB 4 WELL STIMULATION TREATMENT REGULATIONS TEXT OF PROPOSED REGULATIONS Added text is shown in underline

118

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

119

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector  

SciTech Connect (OSTI)

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G. [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)] [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2013-02-11T23:59:59.000Z

120

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Electrical impedance tomography and Calderon's Department of Mathematics, University of Washington, Seattle, WA 98195, USA  

E-Print Network [OSTI]

Electrical impedance tomography and Calder´on's problem G Uhlmann Department of Mathematics, University of Washington, Seattle, WA 98195, USA E-mail: gunther@math.washington.edu Abstract. We survey mathematical developments in the inverse method of Electrical Impedance Tomography which consists

Uhlmann, Gunther

122

An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg,  

E-Print Network [OSTI]

An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg, D. Frigione+, M of an international pellet ablation database (IPADBASE) that has been assembled to enable studies of pellet ablation theories that are used to describe the physics of an ablating fuel pellet in a tokamak plasma. The database

123

WA-RD 470.1 June 1999 Demand Forecasting for Rural Transit  

E-Print Network [OSTI]

WA-RD 470.1 June 1999 Demand Forecasting for Rural Transit This summary describes the key findings of a WSDOT project that is documented more fully in the technical report titled "Demand Forecasting for Rural to Washington for predicting demand for rural public transportation. Three Washington-based models were

124

7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970  

E-Print Network [OSTI]

7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970 v 206.236.7200 f 206.236.3019 www-standing rivalries over the distribution of the Northwest's premiere asset. It will allow the customers to apply to acquire new generation assets. This conclusion, also reached by the Comprehensive Review of the Northwest

125

U.S. NUclear WaSte techNical revieW Board  

E-Print Network [OSTI]

U.S. NUclear WaSte techNical revieW Board Report to The U.S. Congress and The Secretary STATES NUCLEAR WASTE TECHNICAL REVIEW BOARD 2300 Clarendon Boulevard, Suite 1300 Arlington, VA 22201 June Speaker Hastert, Senator Stevens, and Secretary Bodman: The U.S. Nuclear Waste Technical Review Board

126

Natural Data Mining Techniques J. N. Kok and W.A. Kosters  

E-Print Network [OSTI]

, enrichment of data (for example using external data bases), coding, data mining and reporting. In data support for their operations. A usual problem in the #12;eld of data mining is that the combinationNatural Data Mining Techniques J. N. Kok and W.A. Kosters Leiden Institute of Advanced Computer

Kosters, Walter

127

Planning for sustainable communities: Regional incentives and local policy under SB375  

E-Print Network [OSTI]

#12;SB 375: Sustainable Communities & Climate Protection Act (2008) isolation dispersion automobility

California at Davis, University of

128

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

129

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect (OSTI)

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

130

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect (OSTI)

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

131

The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb  

SciTech Connect (OSTI)

The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349–1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D{sub 0}{sup ?}, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D{sub 0}{sup ?}, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

Carta, V.; Ciccioli, A., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it; Gigli, G., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it [Dipartimento di Chimica, Sapienza Università di Roma, p.le A. Moro 5, 00185 Roma (Italy)

2014-02-14T23:59:59.000Z

132

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

133

Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors  

SciTech Connect (OSTI)

The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

1998-07-01T23:59:59.000Z

134

Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments  

E-Print Network [OSTI]

Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

A. Ster; T. Csorgo; B. Lorstad

1998-09-28T23:59:59.000Z

135

Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix  

SciTech Connect (OSTI)

The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

Chen Dongliang; Fan Jiangwei; Wei Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li Chaosheng; Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031 (China)

2005-08-15T23:59:59.000Z

136

SB Electronics Breaks Ground on New Factory | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAXBalancedDepartmentRestrictions onSB Electronics Breaks Ground on New Factory SB

137

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

138

Advance Patent Waiver W(A)2011-034 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: Top Five EERE Blog Posts1-034 Advance Patent Waiver W(A)2011-034 This document

139

Quaternary InGaAsSb Thermophotovoltaic Diodes  

SciTech Connect (OSTI)

In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-03-09T23:59:59.000Z

140

Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites  

SciTech Connect (OSTI)

Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

Hui, Si [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Nielsen, Michele D. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Homer, Mark R.; Medlin, Douglas L. [Sandia National Laboratories, Livermore, California 94550 (United States); Tobola, Janusz [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, 30-059 Krakow (Poland); Salvador, James R. [Chemical and Materials Systems Laboratory, GM R and D Center, Warren, Michigan 48090 (United States); Heremans, Joseph P. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States); Pipe, Kevin P. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-03-14T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations  

E-Print Network [OSTI]

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energyAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D February 2012) InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been

Krishna, Sanjay

142

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

143

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect (OSTI)

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

144

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

145

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel  

E-Print Network [OSTI]

scheme to assess tool durability and tool life in the friction stir welding (FSW) of difficult alumin referencing is freely avail- able at: http://tinyurl.com/mst-fsw. Tools for friction stir welding (FSWOctober 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir

Cambridge, University of

146

New Antimony Lanthanide Disulfide Dibromides LnSbS  

SciTech Connect (OSTI)

CeSbS{sub 2}Br{sub 2} (I), Ce{sub 1/2}La{sub 1/2}SbS{sub 2}Br{sub 2} (II), and LaSbS{sub 2}Br{sub 2} (III) have been synthesized at 700 C from a mixture of LnBr{sub 3}, Ln{sub 2}S{sub 3}, Sb, and S and characterized by single-crystal X-ray diffraction. The three phases are isostructural (space group P2{sub 1}/c, Z=4) and crystallize in a novel, dense, bidimensional structure with cell parameters a=8.709(3) {angstrom}, b=9.187(2) {angstrom}, c=17.397(5) {angstrom} {beta}=104.26(3) for I, a=8.739(7) {angstrom}, b=9.219(7) {angstrom}, c=17.41(2) {angstrom}, =104.3(1) for II, and a=8.785(1) {angstrom}, b=9.236(2) {angstrom}, c=17.372(3) {angstrom}, {beta}=104.09(2) for III. In these compounds, [Ln S{sub 5}Br{sub 4}] and [Ln S{sub 3}Br{sub 6}] (Ln=Ce, La) distorted tricapped trigonal prisms define infinite {sub {infinity}}{sup 2}[LnS{sub 2}Br{sub 2}] layers counterbalanced and capped by antimony cations. In good accordance with the structural features, the charge balance in these materials is to be written Ln{sup III}Sb{sup III}S{sup -II}{sub 2}Br{sup -I}{sub 2}. These compounds exhibit a yellow hue with a measured absorption threshold of 2.42(1), 2.55(1), and 2.72(1) eV for I, II, and III, respectively. In the two cerium containing bromothioantimonates I and II, the origin of the color is assigned to a Ce-4f{yields}Ce-5d electronic transition, which shifts to higher energy from I to II due either to a matrix effect (increase of the mean Ln-S distances under the substitution of Ce for La) or to an atomic ordering between Ce and La cations on the Ln(1) and Ln(2) crystallographic sites. In contrast, the electronic transition at play in III involves a charge transfer from the bromine and sulfur ions to the antimony ions, the latter contributing substantially to the lowermost levels of the conduction band.

Gout, D.; Jobic, S.; Evain, M.; Brec, R.

2001-05-01T23:59:59.000Z

147

Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices  

SciTech Connect (OSTI)

The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb{sub 2} atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio at this interface. The results also explain observed X-ray diffraction profiles.

Mahalingam, Krishnamurthy; Haugan, Heather J.; Brown, Gail J.; Aronow, Andrew J. [AFRL/RXAN, Materials and Manufacturing Directorate Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433-7707 (United States)] [AFRL/RXAN, Materials and Manufacturing Directorate Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433-7707 (United States)

2013-11-18T23:59:59.000Z

148

Page 1 MATH 262 Quiz 1 Name.- Sb 0“ PID: Sokve the problem ...  

E-Print Network [OSTI]

MATH 262 Quiz 1. Name.- Sb 0“ PID: Sokve the problem systematicaìly and neatly und show aìl your work. (4pts) l. Find the equation of the orthogonal ...

149

Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries  

E-Print Network [OSTI]

Laser Deposition for Lithium Batteries Seung-Wan Song, a, *in rechargeable lithium batteries. Introduction Sb-in rechargeable lithium batteries. Two advantages of

Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

2003-01-01T23:59:59.000Z

150

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier  

SciTech Connect (OSTI)

The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-09-15T23:59:59.000Z

151

Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy  

SciTech Connect (OSTI)

High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

2011-10-01T23:59:59.000Z

152

Key results from SB8 simulant flowsheet studies  

SciTech Connect (OSTI)

Key technically reviewed results are presented here in support of the Defense Waste Processing Facility (DWPF) acceptance of Sludge Batch 8 (SB8). This report summarizes results from simulant flowsheet studies of the DWPF Chemical Process Cell (CPC). Results include: Hydrogen generation rate for the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) cycles of the CPC on a 6,000 gallon basis; Volume percent of nitrous oxide, N2O, produced during the SRAT cycle; Ammonium ion concentrations recovered from the SRAT and SME off-gas; and, Dried weight percent solids (insoluble, soluble, and total) measurements and density.

Koopman, D. C.

2013-04-26T23:59:59.000Z

153

Tank 40 Final SB7b Chemical Characterization Results  

SciTech Connect (OSTI)

A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method.

Bannochie, C. J.

2012-11-06T23:59:59.000Z

154

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX  

Broader source: Energy.gov [DOE]

This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

155

A review of "Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625." by Charles W.A. Prior  

E-Print Network [OSTI]

REVIEWS 151 Charles W.A. Prior. Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625. Cambridge: Cambridge University Press, 2005. xiv + 294 pp. $85.00. Review by GRAHAM PARRY, UNIVERSITY OF YORK. Defining the Jacobean...

Parry, Graham

2006-01-01T23:59:59.000Z

156

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network [OSTI]

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

157

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

158

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network [OSTI]

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

159

Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues  

E-Print Network [OSTI]

Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues: XAS XANES EXAFS Antimony Particulate matter Brake linings a b s t r a c t Insights into the speciation of Sb in samples of brake linings, brake pad wear residues, road dust, and atmospheric particulate

Short, Daniel

160

Describing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function  

E-Print Network [OSTI]

of leaf area of a wide variety of loblolly pine trees. FOR. SCI. 51(2):93­101. Key Words: ProbabilityDescribing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function Mauricio Jerez fractions of leaf area calculated with fitted SB functions matched measured values well; cumulative values

Cao, Quang V.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


161

Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3  

E-Print Network [OSTI]

Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3 P. P. Kong1 , F. Sun1,3 , L. Y induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition

Shen, Guoyin

162

ccsd00001219 Superconducting phase diagram of the lled skuterrudite PrOs 4 Sb 12  

E-Print Network [OSTI]

ccsd­00001219 (version 2) : 16 Mar 2004 Superconducting phase diagram of the #12;lled skuterrudite a precise magnetic #12;eld-temperature superconducting phase diagram of PrOs4Sb12 down to 350 mK. We discuss the superconducting phase diagram of PrOs4Sb12 and its possible relation with an unconventional superconducting order

163

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications  

DOE Patents [OSTI]

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11T23:59:59.000Z

164

Illinois SB 1987: the Clean Coal Portfolio Standard Law  

SciTech Connect (OSTI)

On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

NONE

2009-01-15T23:59:59.000Z

165

DWPF SIMULANT CPC STUDIES FOR SB7B  

SciTech Connect (OSTI)

Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the same acid stoichiometric factor. The slow acid addition in MCU seemed to alter the reactions that consumed the small excess acid present such that hydrogen generation was promoted relative to sludge-only processing. The coupled test reached higher wt.% total solids, and this likely contributed to the SME cycle hydrogen limit being exceeded at 110% KMA. It is clear from the trends in the SME processing GC data, however, that the frit slurry formic acid contributed to driving the hydrogen generation rate above the SME cycle limit. Hydrogen generation rates after the second frit addition generally exceeded those after the first frit addition. SRAT formate loss increased with increasing acid stoichiometry (15% to 35%). A substantial nitrate gain which was observed to have occurred after acid addition (and nitrite destruction) was reversed to a net nitrate loss in runs with higher acid stoichiometry (nitrate in SRAT product less than sum of sludge nitrate and added nitric acid). Increased ammonium ion formation was also indicated in the runs with nitrate loss. Oxalate loss on the order 20% was indicated in three of the four acid stoichiometry runs and in the coupled flowsheet run. The minimum acid stoichiometry run had no indicated loss. The losses were of the same order as the official analytical uncertainty of the oxalate concentration measurement, but were not randomly distributed about zero loss, so some actual loss was likely occurring. Based on the entire set of SB7b test data, it is recommended that DWPF avoid concentrating additional sludge solids in single SRAT batches to limit the concentrations of noble metals to SB7a processing levels (on a grams noble metal per SRAT batch basis). It is also recommended that DWPF drop the formic acid addition that accompanies the process frit 418 additions, since SME cycle data showed considerable catalytic activity for hydrogen generation from this additional acid (about 5% increase in stoichiometry occurred from the frit formic acid). Frit 418 also does not appear to need formic acid addition to prevent gel formation in

Koopman, D.

2011-11-01T23:59:59.000Z

166

Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses  

E-Print Network [OSTI]

intensity of Ac 2. 00 gauss. cm. lrn(&(l'1)) for lnSb for a field intensity of A&i ? 2. 23 gauss cm. Im(e(E)) for InSb for a field intensity of A&i -- 2. 40 gauss cm. hn(e(E)) for InSb for a field intensity of A&i 2. 82 gauss cm. Im(&(E)) for InSb for a...-correlation function for InSb for a field intcnsit, y of Ac ? 2. 00 gauss cin. 21 Tiiiic. cvoluti&m of thc pair-correlation function for lnSb for a field intensity of As = 2. 46 gauss cm. 44 Time evolution of the pair-correlation function for InSb for a field...

Burzo, Andrea Mihaela

2001-01-01T23:59:59.000Z

167

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes  

SciTech Connect (OSTI)

Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb{sub 2} and As{sub 2} fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 {mu}m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.

Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Ivanov, S. V. [Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)

2008-09-01T23:59:59.000Z

168

Nano-porosity in GaSb induced by swift heavy ion irradiation  

SciTech Connect (OSTI)

Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.

Kluth, P., E-mail: patrick.kluth@anu.edu.au; Schnohr, C. S.; Giulian, R.; Araujo, L. L.; Lei, W.; Rodriguez, M. D.; Afra, B.; Bierschenk, T.; Ridgway, M. C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Sullivan, J.; Weed, R. [ARC Centre for Antimatter-Matter Studies, AMPL, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Li, W.; Ewing, R. C. [Department of Earth and Environmental Sciences, University of Michigan, Ann Arbor, Michigan 48109-1005 (United States)

2014-01-13T23:59:59.000Z

169

Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes  

SciTech Connect (OSTI)

InAs/InAs{sub 0.88}Sb{sub 0.12}/InAs{sub 0.50}Sb{sub 0.20}P{sub 0.30} heterostructure photodiodes operating at room temperature in the spectral range 1-4.8 {mu}m are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispheres on the rearside of the photodiode chip leads to an increase in the quantum sensitivity of the photodiodes by a factor of 1.5-1.7 at wavelengths in the range 2.2-4.8 {mu}m. At an exposed photodiode area of 0.9 mm{sup 2} and a p-n junction area of 0.15 mm{sup 2}, a zero-bias differential resistance of 30 {Omega} and a quantum sensitivity of 0.24 electron/photon at a wavelength of 3 {mu}m are obtained. The operation of a photodiode with re-reflection of the photon flux in the crystal due to reflection from the curvilinear surface of the rearside of the photodiode chip is theoretically analyzed. The possibility of effective conversion of the re-reflected flux of photons into a photocurrent, with a simultaneous decrease in the p-n junction area, is demonstrated. An increase in the quantum sensitivity in the short-wavelength spectral range 1-2.2 {mu}m by 35% relative to the calculated data is observed, which is probably due to impact ionization in the narrow-gap active region.

Imenkov, A. N.; Grebenshchikova, E. A., E-mail: eagr.iropt7@mail.ioffe.ru; Starostenko, D. A.; Sherstnev, V. V.; Konovalov, G. G.; Andreev, I. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-05-15T23:59:59.000Z

170

Decommissioning samples from the Ft. Lewis, WA, solvent refined coal pilot plant: chemical analysis and biological testing  

SciTech Connect (OSTI)

This report presents the results from chemical analyses and limited biological assays of three sets of samples from the Ft. Lewis, WA solvent refined coal (SRC) pilot plant. The samples were collected during the process of decommissioning this facility. Chemical composition was determined for chemical class fractions of the samples by using high-resolution gas chromatography (GC), high-resolution GC/mass spectrometry (MS) and high-resolution MS. Biological activity was measuring using both the histidine reversion microbial mutagenicity assay with Salmonella typhimurium, TA98 and an initiation/promotion mouse-skin tumorigenicity assay. 19 refs., 7 figs., 27 tabs.

Weimer, W.C.; Wright, C.W.

1985-10-01T23:59:59.000Z

171

Controlling SEI Formation on SnSb-Porous Carbon Nanofibers for...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for Improved Na Ion Storage. Abstract: Porous carbon nanofiber (CNF)-supported tin-antimony (SnSb) alloys is synthesized and applied as sodium ion battery anode. The...

172

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

173

Structural and Magnetic Properties of Co-Mn-Sb Thin films  

SciTech Connect (OSTI)

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

2009-12-17T23:59:59.000Z

174

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect (OSTI)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

175

GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects  

SciTech Connect (OSTI)

We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

1995-01-01T23:59:59.000Z

176

Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand  

SciTech Connect (OSTI)

Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en){sub 2}(dien)({eta}{sup 2}-SbSe{sub 4})] (Ln=Ce(1a), Nd(1b)), [Ln(en){sub 2}(dien)(SbSe{sub 4})] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)({mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4})]{sub {infinity}} (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)({eta}{sup 2}-SbSe{sub 4})] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe{sub 4}]{sup 3-} acts as a monodentate ligand mono-SbSe{sub 4}, a bidentate chelating ligand {eta}{sup 2}-SbSe{sub 4} or a tridentate bridging ligand {mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4} to the lanthanide(III) center depending on the Ln{sup 3+} ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E{sub g} between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: > Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. > The [SbSe{sub 4}]{sup 3-} anion acts as a mono-SbSe{sub 4}, a {eta}{sup 2}-SbSe{sub 4} or a {mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4} ligand to the Ln{sup 3+} ions. > The soft base ligand [SbSe{sub 4}]{sup 3-} can be controlled to coordinate to the Ln{sup 3+} ions with en+dien and en+trien as co-ligands.

Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong [Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Dushu Lake Campus, Soochow University, No. 199 Hengyi Road, Suzhou 215123 (China); Jia Dingxian, E-mail: jiadingxian@suda.edu.cn [Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Dushu Lake Campus, Soochow University, No. 199 Hengyi Road, Suzhou 215123 (China)

2011-06-15T23:59:59.000Z

177

PRELIMINARY FRIT DEVELOPMENT AND MELT RATE TESTING FOR SLUDGE BATCH 6 (SB6)  

SciTech Connect (OSTI)

The Liquid Waste Organization (LWO) provided the Savannah River National Laboratory (SRNL) with a Sludge Batch 6 (SB6) composition projection in March 2009. Based on this projection, frit development efforts were undertaken to gain insight into compositional effects on the predicted and measured properties of the glass waste form and to gain insight into frit components that may lead to improved melt rate for SB6-like compositions. A series of Sludge Batch 6 (SB6) based glasses was selected, fabricated and characterized in this study to better understand the ability of frit compositions to accommodate uncertainty in the projected SB6 composition. Acceptable glasses (compositions where the Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) predicted acceptable properties, good chemical durability was measured, and no detrimental nepheline crystallization was observed) can be made using Frit 418 with SB6 over a range of Na{sub 2}O and Al{sub 2}O{sub 3} concentrations. However, the ability to accommodate variation in the sludge composition limits the ability to utilize alternative frits for potential improvements in melt rate. Frit 535, which may offer improvements in melt rate due to its increased B2O3 concentration, produced acceptable glasses with the baseline SB6 composition at waste loadings of 34 and 42%. However, the PCCS MAR results showed that it is not as robust as Frit 418 in accommodating variation in the sludge composition. Preliminary melt rate testing was completed in the Melt Rate Furnace (MRF) with four candidate frits for SB6. These four frits were selected to evaluate the impacts of B{sub 2}O{sub 3} and Na{sub 2}O concentrations in the frit relative to those of Frit 418, although they are not necessarily candidates for SB6 vitrification. Higher concentrations of B{sub 2}O{sub 3} in the frit relative to that of Frit 418 appeared to improve melt rate. However, when a higher concentration of B{sub 2}O{sub 3} was coupled with a lower concentration of Na{sub 2}O relative to Frit 418, melt rate did not appear to improve. It is expected that a SB6 composition projection with less uncertainty will be received during analysis of the Tank 51 E-1 sample, which will be pulled after the completion of aluminum dissolution in August 2009. At that time, additional frit development work will be performed to seek improved melt rates while maintaining viable projected operating windows. This later work will ultimately lead to a frit recommendation for SB6.

Fox, K.; Miller, D.; Edwards, T.

2009-07-21T23:59:59.000Z

178

Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy  

SciTech Connect (OSTI)

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1998-06-01T23:59:59.000Z

179

OMVPE growth and characterization of GaInAsSb for thermophotovoltaics  

SciTech Connect (OSTI)

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Charache, G.W.

1998-06-01T23:59:59.000Z

180

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

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181

GaSb based ternary and quaternary diffused junction devices for TPV applications  

SciTech Connect (OSTI)

In this work we report the characteristics of ternary, GaInSb (Eg=0.70eV) and quarternary, GaInAsSb (Eg=0.5eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8A/cm{sup 2}, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8A/cm{sup 2}, respectively. The peak internal quantum efficiency for the ternary is over 90{percent} and that of the quarternary is above 75{percent}. Process optimization should improve the performance charcateristics of the quarternary. {copyright} {ital 1997 American Institute of Physics.}

Sundaram, V.S.; Saban, S.B.; Morgan, M.D.; Horne, W.E.; Evans, B.D.; Ketterl, J.R. [EDTEK Inc. 7082 S. 220th Street Kent, Washington 98032 (United States); Morosini, M.B.; Patel, N.B. [Instituto de Fisica, UNICAMP, Campinas, Brasil (Brazil); Field, H. [NREL, Golden, Colorado (United States)

1997-03-01T23:59:59.000Z

182

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents [OSTI]

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Spahn, O.B.; Lear, K.L.

1998-03-10T23:59:59.000Z

183

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy  

SciTech Connect (OSTI)

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

184

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents [OSTI]

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

185

International Conference on Advanced Robotics ICAR 2005 July 2005, Seattle WA Abstract--Integrating human and robot into a single system  

E-Print Network [OSTI]

The 12th International Conference on Advanced Robotics ­ ICAR 2005 ­ July 2005, Seattle WA Abstract to the fine manipulation joints (the wrist). An inverted phenomenon was observed during fine manipulation) and functions as a human- amplifier. Its joints and links correspond to those of the human body, and its

Rosen, Jacob

186

Proc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169184. Selecting Tests and Identifying Test Coverage Requirements for  

E-Print Network [OSTI]

of structural coverage crite­ ria. Our technique partitions an existing test suite into two subsets: testsProc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169­184. Selecting Tests and Identifying Test Coverage Requirements for Modified Software* Gregg Rothermel and Mary

Rothermel, Gregg

187

Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA  

E-Print Network [OSTI]

We report results of air monitoring started due to the recent natural catastrophe on 11 March 2011 in Japan and the severe ensuing damage to the Fukushima Dai-ichi nuclear reactor complex. On 17-18 March 2011, we registered the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. We measured the evolution of the activities over a period of 23 days at the end of which the activities had mostly fallen below our detection limit. The highest detected activity amounted to 4.4 +/- 1.3 mBq/m^3 of 131-I on 19-20 March.

J. Diaz Leon; D. A. Jaffe; J. Kaspar; A. Knecht; M. L. Miller; R. G. H. Robertson; A. G. Schubert

2011-08-23T23:59:59.000Z

188

(GeTe){sub n}SbInTe{sub 3} (n?3)—Element distribution and thermal behavior  

SciTech Connect (OSTI)

Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) Å, c=41.0348(10) Å) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) Å, c=17.2076(4) Å) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) Å, c=62.1620(11) Å). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 °C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 °C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: • The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. • The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. • The cation concentration in the crystal structure is strongly modulated. • The Sb substitution by In has a significant impact on phase transitions. • Results may be relevant for thermoelectrics and thin-film phase-change materials.

Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Schröder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany)

2013-12-15T23:59:59.000Z

189

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization  

SciTech Connect (OSTI)

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

Cervera, C.; Rodriguez, J. B.; Perez, J. P.; Aiet-Kaci, H.; Chaghi, R.; Christol, P. [Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France); Konczewicz, L.; Contreras, S. [Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

2009-08-01T23:59:59.000Z

190

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

191

Synthesis and Characterization of Ag-or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route  

E-Print Network [OSTI]

Synthesis and Characterization of Ag- or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route Oleg Stefan Cel Mare BouleVard, MD-2004 Chisinau, Republic of MoldoVa, AdVanced Materials Processing ZnO nanorods doped with Ag and Sb have been synthesized by a facile hydrothermal technique. Crystal

Kik, Pieter

192

Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses  

SciTech Connect (OSTI)

The Department of Energy – Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft® Excel® spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel® spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

2013-04-30T23:59:59.000Z

193

Prospects of nanostructures Bi{sub 1-x}Sb{sub x} for thermoelectricity  

SciTech Connect (OSTI)

It has been predicted that surface states of topological insulators have large a thermopower and also ultrahigh mobilities. The authors report results of a magneto-thermoelectric investigation of single crystal Bi{sub 1-x}Sb{sub x} nanowires in a glass cover with diameters ranging from 90 nm to 5 {mu}m. The wide-ranging antimony concentration enabled us to study the effect of nanowire dimensionality in the semimetal, semi-conductor and gapless regimes. Quantum size effects in Bi-2 at%Sb nanowires, which are shown in temperature dependences of resistance R(T) and thermopower {alpha}(T) for the diameters significantly higher than the critical diameter for pure Bi-wires, are observed. The thermopower in weak magnetic fields, reaches values +400 {mu}V/K at T=20-40 K. Power factor {alpha}{sup 2}{sigma} depending on diameter of wires, structure, temperature and magnetic field is calculated. In connection with topological insulators, we will discuss the surface effect in the thermoelectric properties that we observe. - Graphical abstract: Temperature dependences of resistance R{sub T}/R{sub 300}(T) (a) for Bi-2 at%Sb wires various diameters d: 1-d=300 nm, 2-d=400 nm, 3-d=600 nm, 4-d=1600 nm. Inset (a) SEM cross sectional image of the 650 nm Bi-2 at%Sb wire (clear) in glass envelope (gray). The magnetic field dependences thermopower (H Double-Vertical-Line {Delta}T) (b) Bi-2 at%Sb wires, with different diameters: (1). d=300 nm, (2). d=400 nm, (3). d=600 nm, T=26 K. Highlights: Black-Right-Pointing-Pointer SMSC transition in semimetal Bi-Sb wires due to the quantum size effect is observed. Black-Right-Pointing-Pointer In Bi-6 at%Sb wires alloys has been realized the gapless (GL) state. Black-Right-Pointing-Pointer In the area GS state abnormal growth thermopower in magnetic fields is found out. Black-Right-Pointing-Pointer Semiconductor Bi{sub 1-x} Sb{sub x} nanowires manifest properties of the topological insulators.

Nikolaeva, Albina A., E-mail: A.Nikolaeva@nano.asm.md [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Konopko, Leonid A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of) [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Huber, Tito E. [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States)] [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States); Bodiul, Pavel P.; Popov, Ivan A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)] [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)

2012-09-15T23:59:59.000Z

194

Development of Bi-Sb-Te ternary alloy with compositionally graded structure  

SciTech Connect (OSTI)

Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

Yamamoto, A.; Ohta, T.

1997-07-01T23:59:59.000Z

195

Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers  

E-Print Network [OSTI]

The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

Keller, Ursula

196

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations by operando-XRD and Mossbauer techniques  

E-Print Network [OSTI]

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations We report the electrochemical study of TiSnSb towards Li, as a negative electrode for Li-ion batteries. TiSnSb can reversibly take up more than 5 lithiums per formula unit leading to reversible

Boyer, Edmond

197

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure  

E-Print Network [OSTI]

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure J. Zhu1 *, J. L. Zhang1 *, P superconductivity and topology nature. A s new states of quantum matter, topological insulators are characterized to topological insulators, topological superconductors are expected to have a full pairing gap in the bulk

Wang, Wei Hua

198

Defining Good Infill A Convening Report on SB 226 and the California  

E-Print Network [OSTI]

with the facilitation of the discussion and presented their draft regulations for feedback. This report provides a brief) and SB 375 (Steinberg), state planning priorities, water conservation and energy efficiency standards, the performance standards include requirements that residential and commercial projects meet or exceed specified

Kammen, Daniel M.

199

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

200

Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation  

E-Print Network [OSTI]

The purpose of this work was to study learn about grain refinement mechanisms and texture development in cast n-type Bi90Sb10 alloy caused by severe plastic deformation. The practical objective is to produce a fine grained and textured...

Im, Jae-taek

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect (OSTI)

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

202

Semimetallic antiferromagnetism in the half-Heusler compound CuMnSb Ruben Weht,2  

E-Print Network [OSTI]

CuMnSb, the first antiferromagnet AFM in the Mn-based class of Heuslers and half-Heuslers that contains several conventional and half metallic ferromagnets, shows a peculiar stability of its magnetic order in high magnetic fields. Density functional based studies reveal an unusual nature of its unstable

Pickett, Warren

203

Engineering Sciences SB ESE Track Rev. July 2014 1/6  

E-Print Network [OSTI]

b or 21a) AM 101 ­ Statistical Inference for Scientists & Engineers ES 150 ­ Intro to Probability with Engineering Applications Statistics 110 ­ Introduction to Probability 1.0 _______ Applied Mathematics (1halfEngineering Sciences SB ­ ESE Track Rev. July 2014 1/6 Plan of Study for the Environmental Science

Chou, James

204

Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys  

SciTech Connect (OSTI)

Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

Malik, K.; Das, Diptasikha [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)] [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Bandyopadhyay, S.; Banerjee, Aritra, E-mail: arbphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India) [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 (India); Mandal, P.; Srihari, Velaga [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)] [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Deb, A. K. [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)] [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)

2013-12-09T23:59:59.000Z

205

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect (OSTI)

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

206

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study  

SciTech Connect (OSTI)

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

Kim, Honggyu; Meng Yifei; Zuo Jianmin [Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States); Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Rouviere, Jean-Luc [CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble (France); Isheim, Dieter; Seidman, David N. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Northwestern University Center for Atom-Probe Tomography (NUCAPT), Northwestern University, Evanston, Illinois 60208 (United States)

2013-03-14T23:59:59.000Z

207

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)  

SciTech Connect (OSTI)

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2013-09-14T23:59:59.000Z

208

Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion  

SciTech Connect (OSTI)

Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.5–5 nm.

Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2014-12-15T23:59:59.000Z

209

Synthesis and transport property of AgSbTe{sub 2} as a promising thermoelectric compound  

SciTech Connect (OSTI)

Polycrystalline AgSbTe{sub 2} ternary compound materials with high phase purity were fabricated using a combined process of mechanical alloying and spark plasma sintering. It was found that stoichiometric AgSbTe{sub 2} is a promising composition for low-and-mediate temperature applications, whose ZT reaches 1.59 at 673 K, benefiting from its extremely low thermal conductivity (0.30 W/mK) in addition to its low electrical resistivity (<1.1x10{sup -4} {omega} m) and large positive Seebeck coefficient (260 {mu}V/K). On the other hand, deviating from this formula would lead to unstable phase structures and higher thermal conductivity, which make the samples less attractive as thermoelectric materials or components of thermoelectric systems.

Wang Heng; Li Jingfeng; Zou Minmin; Sui Tao [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2008-11-17T23:59:59.000Z

210

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

211

Abundance analysis of SB2 binary stars with HgMn primaries  

E-Print Network [OSTI]

We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

T. Ryabchikova

1998-05-06T23:59:59.000Z

212

Optical nonlinear absorption characteristics of Sb{sub 2}Se{sub 3} nanoparticles  

SciTech Connect (OSTI)

In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb{sub 2}Se{sub 3}) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb{sub 2}Se{sub 3} nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

Muralikrishna, Molli, E-mail: muralikrishnamolli@sssihl.edu.in; Kiran, Aditha Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Ravikanth, B., E-mail: muralikrishnamolli@sssihl.edu.in; Sowmendran, P., E-mail: muralikrishnamolli@sssihl.edu.in; Muthukumar, V. Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Venkataramaniah, Kamisetti, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

2014-04-24T23:59:59.000Z

213

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

SciTech Connect (OSTI)

Hexavalent Chromium is a widespread contaminant found in soil, sediment, and groundwater. In order to stimulate microbially-mediated reduction of Cr(VI), a poly-lactate compound (HRC) was injected into the Chromium-contaminated aquifer at the Hanford (WA) 100H site in 2004. Cr(VI) concentrations rapidly declined to below the detection limit and remained so for more than three years after injection. Based on the results of the bacterial community composition using high-density DNA 16S rRNA gene microarrays, we observed the community to transition through denitrifying, ironreducing and sulfate-reducing populations. As a result, we specifically focused isolation efforts on three bacterial species that were significant components of the community. Positive enrichments in defined anaerobic media resulted in the isolation of an iron-reducing Geobacter metallireducens-like isolate, a sulfate-reducing Desulfovibrio vukgaris-like strain and a nitrate-reducing Pseudomonas stutzeri-like isolate among several others. All of these isolates were capable of reducing Cr(VI) anoxically and have been submitted for genome sequencing to JGI. To further characterize the microbial, and geochemical mechanisms associated with in situ Cr(VI) reduction at the site, additional HRC was injected in 2008. The goal was to restimulate the indigenous microbial community and to regenerate the reducing conditions necessary for continued Cr(VI) bio-immobilization in the groundwater. Analysis of the microbial populations post-injection revealed that they recovered to a similar density as after the first injection in 2004. In this study, we present the results from our investigation into microbially-mediated Cr(VI) reduction at Hanford, and a comparison of the microbial community development following two HRC injections four years apart.

Chakraborty, Romy; Brodie, Eoin L; Faybishenko, Boris; Piceno, Yvette M; Tom, Lauren; Choudhuri, Swati; Beller, Harry R; Liu, Jenny; Torok, Tamas; Joyner, Dominique C; Joachimiak, Marcin P; Zhou, Aifen; Van Nostrand, Joy D; Zhou, Joe; Long, Phil E; Newcomer, Darrell R; Andersen, Gary L; Hazen, Terry C.

2010-05-17T23:59:59.000Z

214

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

215

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb  

SciTech Connect (OSTI)

Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by {approx}20% to {approx}65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

Maslar JE, Hurst WS, Wang CA

2007-04-05T23:59:59.000Z

216

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers  

SciTech Connect (OSTI)

There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-21T23:59:59.000Z

217

RHEOLOGICAL AND ELEMENTAL ANALYSES OF SIMULANT SB5 SLURRY MIX EVAPORATOR-MELTER FEED TANK SLURRIES  

SciTech Connect (OSTI)

The Defense Waste Processing Facility (DWPF) will complete Sludge Batch 5 (SB5) processing in fiscal year 2010. DWPF has experienced multiple feed stoppages for the SB5 Melter Feed Tank (MFT) due to clogs. Melter throughput is decreased not only due to the feed stoppage, but also because dilution of the feed by addition of prime water (about 60 gallons), which is required to restart the MFT pump. SB5 conditions are different from previous batches in one respect: pH of the Slurry Mix Evaporator (SME) product (9 for SB5 vs. 7 for SB4). Since a higher pH could cause gel formation, due in part to greater leaching from the glass frit into the supernate, SRNL studies were undertaken to check this hypothesis. The clogging issue is addressed by this simulant work, requested via a technical task request from DWPF. The experiments were conducted at Aiken County Technology Laboratory (ACTL) wherein a non-radioactive simulant consisting of SB5 Sludge Receipt and Adjustment Tank (SRAT) product simulant and frit was subjected to a 30 hour SME cycle at two different pH levels, 7.5 and 10; the boiling was completed over a period of six days. Rheology and supernate elemental composition measurements were conducted. The caustic run exhibited foaming once, after 30 minutes of boiling. It was expected that caustic boiling would exhibit a greater leaching rate, which could cause formation of sodium aluminosilicate and would allow gel formation to increase the thickness of the simulant. Xray Diffraction (XRD) measurements of the simulant did not detect crystalline sodium aluminosilicate, a possible gel formation species. Instead, it was observed that caustic conditions, but not necessarily boiling time, induced greater thickness, but lowered the leach rate. Leaching consists of the formation of metal hydroxides from the oxides, formation of boric acid from the boron oxide, and dissolution of SiO{sub 2}, the major frit component. It is likely that the observed precipitation of Mg(OH){sub 2} and Mn(OH){sub 2} caused the increase in yield stress. The low pH run exhibited as much as an order of magnitude greater B and Li (frit components) leachate concentrations in the supernate. At high pH a decrease of B leaching was found and this was attributed to adsorption onto Mg(OH){sub 2}. A second leaching experiment was performed without any sludge to deconvolute the leach rate behavior of Frit 418 from those of the SB5 sludge-Frit 418 system. At high pH, the sludgeless system demonstrated very fast leaching of all the frit components, primarily due to fast dissolution of the main component, silica, by hydroxide anion; various semiconductor studies have established this reactivity. Overall, the frit-water system exhibited greater leaching from a factor two to almost three orders of magnitude (varying by conditions and species). The slower leaching of the sludge system is possibly due to a greater ionic strength or smaller driving force. Another possible reason is a physical effect, coating of the frit particles with sludge; this would increase the mass transfer resistance to leaching. Based on this study, the cause of clogs in the melter feed loop is still unknown. A possible explanation is that the SME product, like the simulant, is too thin and could contribute to a loss of two-phase flow which could cause plugging of a restricted and poorly mixed zone like the melter feed loop. This is feasible since a previous study of a slurry showed an increase in resistance to flow at lower flow rates. Testing with a radioactive SME sample is underway and should help understand this potential mechanism.

Fernandez, A.

2010-02-08T23:59:59.000Z

218

E v e n t s & T o p i c s i n R e n e wa b l e E n...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

219

Spectroscopy of particle-phonon coupled states in 133Sb by the cluster transfer reaction of 132Sn on 7Li: an advanced test of nuclear interactions  

E-Print Network [OSTI]

Spectroscopy of particle-phonon coupled states in 133Sb by the cluster transfer reaction of 132Sn on 7Li: an advanced test of nuclear interactions

Leoni S, University of Milano and INFN Milano (Italy); Bocchi G, University of Milano and INFN Milano (Italy); Bottoni S, University of Milano and INFN Milano (Italy); Bracco A, University of Milano and INFN Milano (Italy); Camera F, University of Milano and INFN Milano (Italy; Crespi F, University of Milano and INFN Milano (Italy); Morales A, University of Milano and INFN Milano (Italy); Fornal B, IFJ-PAN Krakow (Poland); Szpak B, IFJ-PAN Krakow (Poland); Bednarczyk P, IFJ-PAN Krakow (Poland); Cieplicka N, IFJ-PAN Krakow (Poland); Krolas W, IFJ-PAN Krakow ( Poland); Maj A, IFJ-PAN Krakow (Poland); Rusek K, Heavy Ion Laboratory University of Warsaw (Poland); Bazzacco D, INFN Padova (Italy); Lunardi S, University of Padova and INFN Padova (Italy); Mengoni D, University of Padova and INFN Padova (Italy); Recchia F, University of Padova and INFN Padova (Italy); Ur C, INFN Padova (Italy); Valiente-Dobon J, LNL-INFN (Italy); Gramegna F, LNL-INFN (Italy); Marchi T, LNL-INFN (Italy); Huyse M, KU Leuven (Belgium); Raabe R, KU Leuven (Belgium); VanDuppen P, KU Leuven (Belgium); Sferrazza M, Université libre de Bruxelles (Belgium); Georgiev G, CSNSM Orsay (France); Blazhev A, Institut fur Kernphysik der Universitat zu Köln (Germany); Rosiak D, Institut fur Kernphysik der Universitat zu Köln (Germany); Siebeck B, Institut fur Kernphysik der Universitat zu Köln (Germany); Seidlitz M, Institut fur Kernphysik der Universitat zu Köln (Germany); Reiter P, Institut fur Kernphysik der Universitat zu Köln (Germany); Warr N, Institut fur Kernphysik der Universitat zu Koln (Germany); Hartig AL, TU Darmstadt (Germany); Henrich C, TU Darmstadt (Germany); Ilieva S, TU Darmstadt (Germany); Kroell T, TU Darmstadt (Germany); Thurauf M, TU Darmstadt (Germany); Gernhaeuser R, TU Munchen (Germany); Mucher D, TU Munchen (Germany); Janssens R, Argonne National Laboratory (USA); Carpenter MP, Argonne National Laboratory (USA); Zhu S, Argonne National Laboratory (USA); Kowalska M, ISOLDE-CERN (Switzerland); CERN. Geneva. ISOLDE and neutron Time-of-Flight Experiments Committee; INTC

2014-01-01T23:59:59.000Z

220

SEATTLE, WA ctober 1974  

E-Print Network [OSTI]

nektol n t"c C08 ul \\.\\ t,,.. !" \\ tIn4 UVt'r I I d (l E riltal Inl \\\\ashmptcn, sprl .. lnti ill )f If

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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221

NITED STATES SEATTLE, WA  

E-Print Network [OSTI]

','), "''\\1FS al 0 as- sists the fishing industry through marke>ting service and ('('onomic anaJysi!i programs transmission frequpncy modulated sonar. Edited by Frank J. Hester. June 1970, iii + 26 pp. 1st paper, Sonar target classification experiments with a continuous- transmission ])oppler sonar, by Frank J. Hester, pp

222

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -MiamiYVE r 1Lcla (8.8gJ

223

Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions  

SciTech Connect (OSTI)

{beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

Caillat, T.; Borshchevsky, A.; Fleurial, J.P.

1997-07-01T23:59:59.000Z

224

Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN  

SciTech Connect (OSTI)

Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

2014-01-28T23:59:59.000Z

225

Magnetic susceptibility of curium pnictides. [/sup 248/CmP, /sup 248/CmSb  

SciTech Connect (OSTI)

The magnetic susceptibility of microgram quantities of /sup 248/CmP and /sup 248/CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms.

Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

1981-09-01T23:59:59.000Z

226

Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys  

SciTech Connect (OSTI)

We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5-15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT{approx}1.56 at 300 K, more than 50% improvement of that of the commercial Bi{sub 2}Te{sub 3} ingot materials.

Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

2009-03-09T23:59:59.000Z

227

Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors  

DOE Patents [OSTI]

A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

Biefeld, Robert M. (Albuquerque, NM); Dawson, L. Ralph (Albuquerque, NM); Fritz, Ian J. (Albuquerque, NM); Kurtz, Steven R. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

228

Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices  

SciTech Connect (OSTI)

The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10?K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup ?3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10?K confirmed the 175?meV bandgap and material optical quality.

Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil; Mitchel, W. C.; Mou, Shin; Brown, G. J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)] [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States); Elhamri, S. [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)] [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)

2014-01-06T23:59:59.000Z

229

Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface  

SciTech Connect (OSTI)

We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba [Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan); Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu [Department of Applied Chemistry, Graduate School of Engineering, University of Tokyo, Tokyo 113-0033 (Japan); Kasukabe, Yoshitaka [Department of Electronic Engineering/International Student Center, Tohoku University, Sendai 980-8578 (Japan)

2004-12-15T23:59:59.000Z

230

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

231

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials  

E-Print Network [OSTI]

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2-like" exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3. It is found that crystal symmetry breaking

232

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

233

Effect of Pressure and Chemical Substitutions on the Charge-Density-Wave in LaAgSb2  

SciTech Connect (OSTI)

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La{sub 1-x}R{sub x}AgSb{sub 2} (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb{sub 2} under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c/a ratio) prevailing in the latter case.

Budko,S.; Weiner, T.; Ribeiro, R.; Canfield, P.; Lee, Y.; Vogt, T.; Lacerda

2006-01-01T23:59:59.000Z

234

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate  

DOE Patents [OSTI]

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Sherohman, John W. (Livermore, CA); Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong (Livermore, CA); Wu, Kuang Jen J. (Cupertino, CA)

2007-05-29T23:59:59.000Z

235

SeZnSb alloy and its nano tubes, graphene composites properties  

SciTech Connect (OSTI)

Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se{sub 96}-Zn{sub 2}-Sb{sub 2} and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se{sub 96}-Zn{sub 2}-Sb{sub 2} alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D) have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80%) in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

Singh, Abhay Kumar [Department of Physics, Indian Institute of Physics, Bangalore-560012 (India)

2013-04-15T23:59:59.000Z

236

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors  

SciTech Connect (OSTI)

In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5??m. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325?K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150?K–325?K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(?)?=?1?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?300?K and D*(?)?=?5?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?250?K, which is easily achievable with a one stage TE cooler.

Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

2014-07-14T23:59:59.000Z

237

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties  

SciTech Connect (OSTI)

In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150?nm), large branches (average diameter of 100?nm), and small branches (average diameter of sub-10?nm to sub-20?nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420?°C in argon produced single crystalline structures along ?311? directions for the branches and along ?111? for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B., E-mail: janes@ecn.purdue.edu [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Akatay, Cem [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Khan, Mohammad Ryyan; Alam, Muhammad A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Maeda, Kosuke [Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta–cho, Midori-ku, Yokohama 226-8502 (Japan); Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Deacon, Russell S.; Ishibashi, Koji [Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Chen, Yong P. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 (United States); Sands, Timothy D. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-08-28T23:59:59.000Z

238

Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure  

SciTech Connect (OSTI)

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

2012-12-03T23:59:59.000Z

239

Structural investigation on Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses using x-ray photoelectron spectra  

SciTech Connect (OSTI)

The structure of Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses (x?=?7.5, 10, 15, 20, 25, 27.5, 30, and 32.5 at. %) has been investigated by x-ray photoelectron spectroscopy (XPS). Different structural units have been extracted and characterized by decomposing XPS core level spectra, the evolution of the relative concentration of each structural unit indicates that, the relative contributions of Se-trimers and Se-Se-Ge(Sb) structure decrease with increasing Ge content until they become zero at chemically stoichiometric glasses of Ge{sub 25}Sb{sub 10}Se{sub 65}, and then the homopolar bonds like Ge-Ge and Sb-Sb begin to appear in the spectra. Increase of homopolar bonds will extend band-tails into the gap and narrow the optical band gap. Thus, the glass with a stoichiometric composition generally has fewer defective bonds and larger optical bandgap.

Wei, Wen-Hou [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Xiang, Shen [College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Si-Wei; Wang, Rong-Ping, E-mail: rongping.wang@anu.edu.au [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang [Department of Applied Physics, Chongqing University, Chongqing 401331 (China)

2014-05-14T23:59:59.000Z

240

Department of Political Science Box 353530 University of Washington Seattle, WA 98195-3530 phone: (206) 543-2780 fax: (206) 685-2146 www.polisci.washington.edu  

E-Print Network [OSTI]

Department of Political Science · Box 353530 · University of Washington · Seattle, WA 98195-3530 phone: (206) 543-2780 · fax: (206) 685-2146 · www.polisci.washington.edu Highlights Political science rating in the Princeton Review 2010 list of "great schools to study political science." The department

Anderson, Richard

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA  

E-Print Network [OSTI]

1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pidhttp://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA list of genes that may

242

Felix Bildhauer & Roland Schfer (eds.), Proceedings of the 9th Web as Corpus Workshop (WaC-9) @ EACL 2014, pages 2935, Gothenburg, Sweden, April 26 2014. c 2014 Association for Computational Linguistics  

E-Print Network [OSTI]

Linguistics {bs,hr,sr}WaC ­ Web corpora of Bosnian, Croatian and Serbian Nikola Ljubesi´c University of Zagreb of top-level-domain web corpora of Bosnian, Croatian and Serbian. For constructing the corpora we use the process of building web corpora of Bosnian, Croatian and Serbian by crawling the .ba, .hr and .rs TLDs

243

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes  

E-Print Network [OSTI]

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes J. P superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage

Flatte, Michael E.

244

Performance of Gd-doped Ti-based Sb-SnO2 anodes for electrochemical destruction of phenol  

E-Print Network [OSTI]

by a thermal deposition method. Phenol degradation followed first-order rate kinetics, with the maxi- mum rate with the control (plain Ti/SnO2-Sb). TOC removal and UV scans revealed that different intermediates were produced reserved. Keywords: Gd; SnO2; DSA electrode; Phenol; Electrochemical degradation 1. Introduction

245

Review of Scientific instruments InAs/Al0.2Ga0.8Sb Quantum Well Hall Sensors  

E-Print Network [OSTI]

1 Review of Scientific instruments InAs/Al0.2Ga0.8Sb Quantum Well Hall Sensors with improved Boeck, G. Borghs IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Cross-shaped Hall sensors with high. Introduction Hall effect devices are by far the most widely used magnetic sensors today. Their future mainly

Moshchalkov, Victor V.

246

Alternative route for the preparation of CoSb{sub 3} and Mg{sub 2}Si derivatives  

SciTech Connect (OSTI)

An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb{sub 3} and magnesium in the case of Mg{sub 2}Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb{sub 3} (milling included) and Mg{sub 2}Si (no milling). (2) Micrographs of CoSb{sub 3} product. (3) Micrographs of Mg{sub 2}Si product. Highlights: Black-Right-Pointing-Pointer The combustion synthesis followed by HP was used for the manufacturing of CoSb{sub 3} or Mg{sub 2}Si. Black-Right-Pointing-Pointer The time of reaction is shorter compared with many other synthesis methods. Black-Right-Pointing-Pointer The process is scalable and practically wasteless.

Godlewska, E., E-mail: godlewsk@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland); Mars, K.; Zawadzka, K. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)

2012-09-15T23:59:59.000Z

247

Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma  

E-Print Network [OSTI]

Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma Department, however existing techniques focus on relatively simple geometrical rules and algorithms to map a grid onto in the Millennium Dome, London . Use of a grid structure, consisting of a lattice of rods (see Figure 1) may be more

Pellegrino, Sergio

248

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices  

E-Print Network [OSTI]

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices G. A. Umana transport J. Appl. Phys. 112, 123715 (2012) Characteristics of built-in polarization potentials Appl. Phys. Lett. 101, 243113 (2012) Thermal stability of the deep ultraviolet emission from Al

Krishna, Sanjay

249

Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses  

SciTech Connect (OSTI)

Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

2014-03-21T23:59:59.000Z

250

High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds  

SciTech Connect (OSTI)

Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb,In,Ce multiple-filled Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} skutterudites were investigated. Black-Right-Pointing-Pointer Thermal conductivity is strongly suppressed by multiple filling of Yb, Ce and In. Black-Right-Pointing-Pointer Small amounts of Ce and In with Yb are beneficial for the enhancement of TE performance. Black-Right-Pointing-Pointer The highest ZT=1.43 was achieved with Yb{sub 0.07}In{sub 0.094}Ce{sub 0.065}Co{sub 4}Sb{sub 11.92} at 800 K.

Ballikaya, Sedat [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey) [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States); Uzar, Neslihan; Yildirim, Saffettin [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey)] [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Salvador, James R. [Chemical Sci. and Mater. Systems Laboratory, General Motors Global R and D Center, Warren, MI 48090 (United States)] [Chemical Sci. and Mater. Systems Laboratory, General Motors Global R and D Center, Warren, MI 48090 (United States); Uher, Ctirad, E-mail: cuher@umich.edu [Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States)] [Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States)

2012-09-15T23:59:59.000Z

251

Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.  

SciTech Connect (OSTI)

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

2010-08-01T23:59:59.000Z

252

Properties of CoSb{sub 3} films grown by pulsed laser deposition  

SciTech Connect (OSTI)

Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

Christen, H.M.; Mandrus, D.G.; Norton, D.P.; Boatner, L.A.; Sales, B.C.

1997-07-01T23:59:59.000Z

253

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

254

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

255

Ultrafast terahertz-induced response of GeSbTe phase-change materials  

SciTech Connect (OSTI)

The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARA–Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

2014-06-23T23:59:59.000Z

256

Evaluation of electron mobility in InSb quantum wells by means of percentage-impact  

SciTech Connect (OSTI)

In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

2014-05-15T23:59:59.000Z

257

Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass  

SciTech Connect (OSTI)

In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

2014-04-24T23:59:59.000Z

258

Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process  

SciTech Connect (OSTI)

Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

Jung, B.Y.; Choi, J.S.; Oh, T.S.; Hyun, D.B.

1997-07-01T23:59:59.000Z

259

Electronic and optical properties of TiCoSb under different pressures  

SciTech Connect (OSTI)

The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

Xu Bin, E-mail: hnsqxb@163.com [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Zhang Jing [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Liang Jianchu [Department of electronic science, Huizhou University, Guangdong 516001 (China); Gao Guoying; Yi Lin [Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-08-15T23:59:59.000Z

260

High thermoelectric performance BiSbTe alloy with unique low-dimensional structure  

SciTech Connect (OSTI)

We report a detailed description of an innovative route of a melt spinning (MS) technique combined with a subsequent spark plasma sintering process in order to obtain high performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material, which possesses a unique low-dimensional structure. The unique structure consists of an amorphous structure, 5-15 nm fine nanocrystalline regions, and coherent interfaces between the resulting nanocrystalline regions. Measurements of the thermopower, electrical conductivity, and thermal conductivity have been performed over a range of temperature of 300-400 K. We found that MS technique can give us considerable control over the resulting nanostructure with good thermal stability during the temperature range of 300-400 K and this unique structure can effectively adjust the transport of phonons and electrons, in a manner such that it is beneficial to the overall thermoelectric performance of the material, primarily a reduction in the lattice thermal conductivity. Subsequently, this results in a maximum figure of merit ZT value of 1.56 at 300 K for p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material. This ZT value is over a 50% improvement of that of the state of the art commercial Bi{sub 2}Te{sub 3} materials. We also report results of thermal cycling of this material for over one hundred cycles between 300-400 K. Our work offers an innovative route for developing high performance bismuth telluride based alloys and devices, which have even broader prospects for commercial applications. This technique may also be applicable to other thermoelectric materials.

Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

2009-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

262

Bicon Namibia Consulting Engineers | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunways JV Jump to:Bhoruka Power Corporation Ltd

263

Sustainable Land Management in Northern Namibia  

E-Print Network [OSTI]

and low water holding capacity (Bolivia) #12;Perspective Similar soil (Kavango) #12;Increased Demand for Food + Energy Production Expansion onto Less Resilient Lands Reduced Production per Unit Area

264

Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell are with Stony Brook University, Stony Brook, NY.  

E-Print Network [OSTI]

. Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell 1064-3818/95/030163-20 159 Turn-Constrained Route Planning for Avoiding Hazardous Weather Jimmy Krozel

Mitchell, Joseph S.B.

265

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-03-19T23:59:59.000Z

266

Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets  

DOE Patents [OSTI]

The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

2012-01-17T23:59:59.000Z

267

Effect of antimony on the deep-level traps in GaInNAsSb thin films  

SciTech Connect (OSTI)

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-09-15T23:59:59.000Z

268

Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. Shalit y , B. Van  

E-Print Network [OSTI]

``paper'' 2000/12/12 page 1 i i i i i i i i Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. The resultant infrastructure, called KeLP \\Lambda , has been applied to a variety of applications including­ tured adaptive refinement for ab­initio molecular dynamics [13]. A distinguishing feature of KeLP

Baden, Scott B.

269

Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy  

SciTech Connect (OSTI)

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Kleiman, R. N.; Preston, J. S. [Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

270

60 keV Ar{sup +}-ion induced modification of microstructural, compositional, and vibrational properties of InSb  

SciTech Connect (OSTI)

Room temperature irradiation of InSb(111) by 60?keV Ar{sup +}-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1?×?10{sup 17} to 3?×?10{sup 18} ions cm{sup ?2}. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2014-10-14T23:59:59.000Z

271

Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices  

SciTech Connect (OSTI)

Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

2014-06-21T23:59:59.000Z

272

Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer  

SciTech Connect (OSTI)

Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

2009-06-10T23:59:59.000Z

273

Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors  

SciTech Connect (OSTI)

We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100?nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 ?m window equal to 42% for U{sub bias}?=??0.1?V, 77?K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

Giard, E., E-mail: edouard.giard@onera.fr; Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haïdar, R. [ONERA, DOTA, Chemin de la Hunière, 91761 Palaiseau Cedex (France); Taalat, R.; Delmas, M.; Rodriguez, J.-B.; Christol, P. [Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5 (France); Steveler, E.; Bardou, N. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Boulard, F. [CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)

2014-07-28T23:59:59.000Z

274

XRD, Electron Microscopy and Vibrational Spectroscopy Characterization of Simulated SB6 HLW Glasses - 13028  

SciTech Connect (OSTI)

Sample glasses have been made using SB6 high level waste (HLW) simulant (high in both Al and Fe) with 12 different frit compositions at a constant waste loading of 36 wt.%. As follows from X-ray diffraction (XRD) and optical and scanning electron microscopy (SEM) data, all the samples are composed of primarily glass and minor concentration of spinel phases which form both isometric grains and fine cubic (?1 ?m) crystals. Infrared spectroscopy (IR) spectra of all the glasses within the range of 400-1600 cm{sup -1} consist of the bands due to stretching and bending modes in silicon-oxygen, boron-oxygen, aluminum-oxygen and iron-oxygen structural groups. Raman spectra showed that for the spectra of all the glasses within the range of 850-1200 cm{sup -1} the best fit is achieved by suggestion of overlapping of three major components with maxima at 911-936 cm{sup -1}, 988-996 cm{sup -1} and 1020-1045 cm{sup -1}. The structural network is primarily composed of metasilicate chains and rings with embedded AlO{sub 4} and FeO{sub 4} tetrahedra. Major BO{sub 4} tetrahedra and BO{sub 3} triangles form complex borate units and are present as separate constituents. (authors)

Stefanovsky, S.V. [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation) [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation); Institute of Physical Chemistry and Electrochemistry RAS, Leninskii av. 31, Moscow 119991 (Russian Federation); Nikonov, B.S.; Omelianenko, B.I. [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation)] [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation); Choi, A.; Marra, J.C. [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)] [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)

2013-07-01T23:59:59.000Z

275

Hydrothermal synthesis and thermoelectric properties of nanostructured Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds  

SciTech Connect (OSTI)

Research highlights: {yields} Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} powders have been synthesized by a hydrothermal route. {yields} Hexagonal Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} naosheets due to the anisotropic growth of the crystals. {yields} The temperature gradients lead to directional arrangement nanosheet-agglomerates. {yields} Nanosheet-agglomerates are beneficial for improving the TE property of products. {yields} A maximum figure of merit of 0.86 is achieved at about 100 {sup o}C. -- Abstract: Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds have been prepared by hydrothermal synthesis at 150 {sup o}C for 24 h using SbCl{sub 3}, BiCl{sub 3} and tellurium powder as precursors. X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) have been applied to analyze the phase distributions, microstructures and grain sizes of the as-grown Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} products. It is found that the hydrothermally synthesized Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanopowders have a morphology dominated by irregular hexagonal sheets due to the anisotropic growth of the crystals. The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanosheets are parallelly stacked in certain direction to form sheet-agglomerates attribute to the temperature gradients in the solution.

Zhang, Yanhua [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China) [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Academy of Equipment Command and Technology, Beijing 102249 (China); Xu, Guiying [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Mi, Jianli [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark)] [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark); Han, Fei; Wang, Ze [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Ge, Changchun, E-mail: ccge@mater.ustb.edu.cn [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)

2011-05-15T23:59:59.000Z

276

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations in RAgSb{sub 2} (R=Y, La-Nd, Sm)  

SciTech Connect (OSTI)

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb{sub 2} series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H{lt}30&hthinsp;kG) and high temperatures (up to 25 K in SmAgSb{sub 2}). For H{parallel}c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m{sub 0}. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb{sub 2}, antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb{sub 2} and CeAgSb{sub 2}, the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. {copyright} {ital 1999} {ital The American Physical Society}

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Lacerda, A.H. [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

1999-11-01T23:59:59.000Z

277

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations in RAgSb[sub 2] (R=Y, La-Nd, Sm)  

SciTech Connect (OSTI)

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb[sub 2] series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H[lt]30 hthinsp;kG) and high temperatures (up to 25 K in SmAgSb[sub 2]). For H[parallel]c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m[sub 0]. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb[sub 2], antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb[sub 2] and CeAgSb[sub 2], the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. [copyright] [ital 1999] [ital The American Physical Society

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. (Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)); Lacerda, A.H. (National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))

1999-11-01T23:59:59.000Z

278

Highly tunable electron transport in epitaxial topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films  

SciTech Connect (OSTI)

Atomically smooth, single crystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} films have been grown on SrTiO{sub 3}(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x=0.5{+-}0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} sample. These highly tunable (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators.

He Xiaoyue; Guan Tong; Wang Xiuxia; Feng Baojie; Cheng Peng; Chen Lan; Li Yongqing; Wu Kehui [Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2012-09-17T23:59:59.000Z

279

The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires  

SciTech Connect (OSTI)

The effects of the chemical composition and strain on the electronic properties of [111] zinc-blende (ZB) and [0001] wurtzite (WZ) GaSb/InAs core-shell nanowires (NWs) with different core diameters and shell thicknesses are studied using first-principles methods. The band structures of the [111] ZB GaSb/InAs core-shell NWs underwent a noticeable type-I/II band alignment transition, associated with a direct-to-indirect band gap transition under a compressive uniaxial strain. The band structures of the [0001] WZ GaSb/InAs core-shell NWs preserved the direct band gap under either compressive or tensile uniaxial strains. In addition, the band gaps and the effective masses of the carriers could be tuned by their composition. For the core-shell NWs with a fixed GaSb-core size, the band gaps decreased linearly with an increasing InAs-shell thickness, caused by the significant downshift of the conduction bands. For the [111] ZB GaSb/InAs core-shell NWs, the calculated effective masses indicated that the transport properties could be changed from hole-dominated conduction to electron-dominated conduction by changing the InAs-shell thickness.

Ning, Feng; Wang, Dan; Tang, Li-Ming, E-mail: lmtang@hnu.edu.cn; Zhang, Yong; Chen, Ke-Qiu, E-mail: keqiuchen@hnu.edu.cn [Department of Applied Physics, Hunan University, Changsha 410082 (China)

2014-09-07T23:59:59.000Z

280

Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases  

SciTech Connect (OSTI)

A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchange–correlation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: • Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. • It is found that the hexagonal phase is an indirect gap semiconductor. • Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. • By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

Arghavani Nia, Borhan, E-mail: b.arghavani@gmail.com [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Sedighi, Matin [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Shahrokhi, Masoud [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Nano-Science and Nano-Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physics Science Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-1795, Tehran (Iran, Islamic Republic of)

2013-11-15T23:59:59.000Z

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281

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

282

Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices  

SciTech Connect (OSTI)

Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect)

Kagan, M. S., E-mail: kagan@cplire.ru; Altukhov, I. V. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Baranov, A. N. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Il'inskaya, N. D. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Paprotskiy, S. K. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Teissier, R. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Usikova, A. A. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)

2013-11-15T23:59:59.000Z

283

Transport properties of partially-filled Ce{sub y}Co{sub 4}Sb{sub 12}  

SciTech Connect (OSTI)

The authors have investigated the magnetic and transport properties of Ce{sub y}Co{sub 4}Sb{sub 12} filled skutterudites with the filling fraction y {le} 0.1. These compounds are n-type materials that develop a magnetic moment upon the presence of trivalent cerium. Cerium has a strong influence on all transport properties and even in small amounts it drastically reduces the lattice thermal conductivity. The resulting figures of merit are comparable to the values established previously for the p-type filled skutterudites.

Uher, C.; Chen, B.; Hu, S.; Morelli, D.T.; Meisner, G.P.

1997-07-01T23:59:59.000Z

284

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

285

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

286

Low-temperature transport properties of the mixed-valence semiconductor Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3}  

SciTech Connect (OSTI)

We have measured the transport properties of Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3} from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb{sub 3} and IrSb{sub 3}. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru{sup 4+}- and Ru{sup 2+}-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed. {copyright} {ital 1996 American Institute of Physics.}

Nolas, G.S. [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States)] [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States); Harris, V.G.; Tritt, T.M. [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States)] [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States); Slack, G.A. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)] [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

1996-12-01T23:59:59.000Z

287

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

288

Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)  

SciTech Connect (OSTI)

This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

Myers, Kenneth D.

1999-11-08T23:59:59.000Z

289

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S. Bozin,1 S. M. Haile,2 G. J. Snyder,2 and S. J. L. Billinge1,  

E-Print Network [OSTI]

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S April 2007 A study of the local atomic structure of the promising thermoelectric material -Zn4Sb3, using Thermoelectric materials allow for direct conversion of heat into electrical energy and vice versa. They hold

290

Synthesis, structure and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9}: A double perovskite with competing antiferromagnetic and ferromagnetic interactions  

SciTech Connect (OSTI)

The synthesis, structural characterization, and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9} double perovskite are reported. The crystal structure has been refined by X-ray and neutron powder diffraction data in the monoclinic space group P2{sub 1}/n. Co{sup 2+} and Sb{sup 5+} have the maximum order allowed for the La{sub 3}Co{sub 2}SbO{sub 9} stoichiometry. Rietveld refinements of powder neutron diffraction data show that at room temperature the cell parameters are a=5.6274(2) A, b=5.6842(2) A, c=7.9748(2) A and {beta}=89.999(3) Degree-Sign . Magnetization measurements indicate the presence of ferromagnetic correlations with T{sub C}=55 K attributed to the exchange interactions for non-linear Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. The effective magnetic moment obtained experimentally is {mu}{sub exp}=4.38 {mu}{sub B} (per mol Co{sup 2+}), between the theoretical one for spin only (3.87 {mu}{sub B}) and spin-orbit value (6.63 {mu}{sub B}), indicating partially unquenched contribution. The low magnetization value at high magnetic field and low temperature (1 {mu}{sub B}/f.u., 5 T and 5 K) and the difference between ZFC and FC magnetization curves (at 5 kOe) indicate that the ferromagnetism do not reach a long range order and that the material has an important magnetic frustration. - Graphical abstract: Co-O-Co (Yellow octahedra only) rich zones (antiferromagnetic) are in contact with Co-O-Sb-O-Co (Red and yellow octahedra) rich zones (Ferromagnetic) to give the peculiar magnetic properties, as a consequence, a complex hysteresis loop can be observed composed by a main and irreversible curve in all the measured range, superimposed with a ferromagnetic component at low fields. Highlights: Black-Right-Pointing-Pointer La{sub 3}Co{sub 2}SbO{sub 9} has small Goldschmidt Tolerance Factor (t) due to the small size of La{sup 3+}. Black-Right-Pointing-Pointer Small t determines an angle for the path Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} of 153 Degree-Sign . Black-Right-Pointing-Pointer Ferromagnetism is attributed to exchange interactions for Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. Black-Right-Pointing-Pointer Ferromagnetic nanoclusters are embedded in an antiferromagnetic matrix.

Franco, D.G.; Fuertes, V.C.; Blanco, M.C. [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)] [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina); Fernandez-Diaz, M.T. [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France)] [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France); Sanchez, R.D., E-mail: rodo@cab.cnea.gov.ar [Centro Atomico Bariloche, CNEA and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Rio Negro (Argentina); Carbonio, R.E., E-mail: carbonio@fcq.unc.edu.ar [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)

2012-10-15T23:59:59.000Z

291

Study of a 1?eV GaNAsSb photovoltaic cell grown on a silicon substrate  

SciTech Connect (OSTI)

We report the performance of a 1?eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1?eV GaN{sub 0.018}As{sub 0.897}Sb{sub 0.085} photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700?°C for 5?min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (V{sub OC}) of 0.42?V and a short circuit current density (J{sub SC}) of 23.4?mA/cm{sup 2} while the device on the Si substrate showed a V{sub OC} of 0.39?V and a J{sub SC} of 21.3?mA/cm{sup 2}. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.

Tan, K. H.; Loke, W. K.; Wicaksono, S.; Li, D.; Leong, Y. R.; Yoon, S. F. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)] [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sharma, P.; Milakovich, T.; Bulsara, M. T.; Fitzgerald, E. A. [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)] [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

2014-03-10T23:59:59.000Z

292

Utah_wa_correctional_facility  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II Field EmissionFunctional MaterialsRobert RadtkeWashington

293

Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}  

SciTech Connect (OSTI)

We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain)] [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France)] [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

2010-10-15T23:59:59.000Z

294

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1xZn2Sb2**  

E-Print Network [OSTI]

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1±xZn2Sb. Introduction Because of their ability to convert waste heat into electricity, thermoelectric materials have in efficiency, thermoelectric materials could pro- vide a substantial amount of electrical power from automotive

295

Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder, and T. Caillat  

E-Print Network [OSTI]

. Introduction The best thermoelectric materials are semiconductors which limit the movement of heat conducting. The quality of a thermoelectric material is described by a dimensionless figure-of-merit, ZT, which depends thermoelectric materials have been made from (Bi,Sb)2Te3 compounds. In polycrystalline form, meaning made up

296

Proceedings of the MRS Spring Meeting, San Francisco, March 1997, Symposium Q -Thermoelectrics, in press (1997) THERMAL CONDUCTIVITY OF Zn4-xCdxSb3 SOLID SOLUTIONS  

E-Print Network [OSTI]

performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further performance p-type material [1,2]. -Zn4Sb3 has interesting thermoelectric properties in the 473-673K

297

Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface  

SciTech Connect (OSTI)

It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki [Morphological Research Laboratory, Toray Research Center Inc., Otsu, Shiga (Japan); Kurata, Hiroki; Isoda, Seiji [Institute for Chemical Research, Kyoto University, Uji, Kyoto (Japan)

2011-03-15T23:59:59.000Z

298

Strong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied by Resonant X-Ray Emission Spectroscopy  

E-Print Network [OSTI]

electrons tends to stabilize magnetic ordered states. Permanent ferromagnets, such as Nd-Fe-B and SmStrong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied valence is independent of temperature. This evidences a close interplay between the magnetic instability

Lin, Jung-Fu "Afu"

299

Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries  

SciTech Connect (OSTI)

The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles.

Wang Zhong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); General Research Institute for Nonferrous Metal, Beijing 100088 (China); Tian Wenhuai [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Liu Xiaohe [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yang Rong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li Xingguo [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)], E-mail: xgli@pku.edu.cn

2007-12-15T23:59:59.000Z

300

Confirmatory Survey Report for Area B1S/B2S at the Chevron Mining Washington Remediation Project, Washington, PA  

SciTech Connect (OSTI)

During the period of October 2 and 3, 2007, the Oak Ridge Institute for Science and Education (ORISE) performed confirmatory radiological survey activities which included gamma surface scans within Area B1S/B2S and the collection of soil samples from these areas.

W. C. Adams

2007-11-20T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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301

High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)  

SciTech Connect (OSTI)

Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J.; Snyder, G. Jeffrey; Kauzlarich, Susan M.

2014-02-11T23:59:59.000Z

302

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface  

SciTech Connect (OSTI)

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi{sub x}Sb{sub 1-x}, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, whereas Sb{sub 2}Se{sub 3} is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-02-24T23:59:59.000Z

303

Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter  

SciTech Connect (OSTI)

First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

1995-01-05T23:59:59.000Z

304

Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb  

SciTech Connect (OSTI)

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr. [Air Force Institute of Technology, Wright Patterson Air Force Base, Ohio 45433 (United States); Gonzalez, L. P.; Murray, J. M.; Guha, S. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States); Schepler, K. L. [Air Force Research Laboratory, Sensors Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States)

2010-10-15T23:59:59.000Z

305

Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors  

SciTech Connect (OSTI)

A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7?nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

Ashuach, Y.; Lakin, E.; Kaufmann, Y. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Saguy, C. [Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.il [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel)

2014-09-28T23:59:59.000Z

306

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

307

Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique  

SciTech Connect (OSTI)

Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K. [Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka,Surathkal - 575025, Mangalore (India)

2014-01-28T23:59:59.000Z

308

Thermodynamic and transport properties of single-crystal Yb{sub 14}MnSb{sub 11}  

SciTech Connect (OSTI)

Relatively large (up to 250 mg) single crystals of the intermetallic compound Yb{sub 14}MnSb{sub 11} have been prepared by a flux-growth technique. The results of thermodynamic and transport measurements of these samples are presented. The compound orders ferromagnetically at approximately T{sub C}=53{plus_minus}1K, with a magnetization consistent with the assignment Mn{sup 3+} (3d{sup 4}) and Yb{sup 2+} (4f{sup 14}). The Mn moments are local in nature, with the full effective and saturated moment of the Hund{close_quote}s rule spin-only ground state. The electrical resistivity has a metallic temperature dependence, with only a modest anisotropy. Room-temperature values of the resistivity are relatively high for an intermetallic compound: 1630{plus_minus}160 {mu}{Omega}cm and 1250{plus_minus}130 {mu}{Omega}cm for currents flowing approximately parallel and perpendicular to the {ital c} axis, respectively. There is a distinct loss of spin-disorder scattering in the resistivity at T{sub C}. From the heat capacity, a rough estimation of the magnetic entropy gives {Delta}S{sub M}{approx}12.1 J/mol K, the value in reasonable agreement with the expected {Delta}S{sub M}{approx}R ln 5 from the assignment of these moments. All of these data are consistent with a picture of Mn{sup 3+} local moments being coupled via conduction electrons. To this end, Yb{sub 14}MnSb{sub 11} appears to be analogous to local-moment rare-earth intermetallic compounds, and may point the way toward a class of 3d Kondo lattice compounds. {copyright} {ital 1999} {ital The American Physical Society}

Fisher, I.R.; Wiener, T.A.; Budko, S.L.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Chan, J.Y.; Kauzlarich, S.M. [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)] [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)

1999-06-01T23:59:59.000Z

309

Improved Thermoelectric Performance of p-type Skutterudite YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5)  

SciTech Connect (OSTI)

Thermoelectric performance of p-type skutterudites currently lags that of the corresponding n-type materials and improvement of this important class of materials have become the focus of considerable research effort world-wide. Recent calculations find promising band structural features in p-type skutterudite materials of the type AeFe3NiSb12 ( Ae = Ca, Sr, or Ba) which could potentially lead to excellent thermoelectric properties. Recent work on the Yb- filled analog of the these formulations (YbFe3NiSb12) however finds that the onset of intrinsic conduction at lower than expected temperatures deteriorates the performance above 500 K leading to poor performance in the temperature range of interest for automotive waste heat recovery applications. We therefore seek a way to increase the band gap in order to find a way to minimize the deleterious effects of intrinsic conduction. Here we present ab initio band structure calculations and the synthesis and thermoelectric properties of YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5). Ab initio calculations find that the band gap increases for YbFe3PtSb12 as compared to the Ni-containing analog, though no such increase in the band gap energy was found for as compared to YbFe3.5Ni0.5Sb12. The y = 1 samples shows a characteristic transition to intrinsic conduction with a decrease in the Seebeck coefficient at temperatures above 700 K. The increased carrier concentration in y = 0.5 virtually eliminates any evidence of intrinsic conduction and the Seebeck coefficients for these samples increase monotonically up to 750 K, resulting in power factors approaching 27 W/cm K2 at 750 K. These power factors combined with low thermal conductivity result in a ZT = 0.9 at 750 K for Yb0.95Fe3.5Pt0.5Sb12.

Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Yang, Jiong [Chinese Academy of Sciences; Zhang, Weiqing [Chinese Academy of Sciences; Yang, Jihui [University of Washington; Cai, Wei [ORNL; Wang, Hsin [ORNL

2013-01-01T23:59:59.000Z

310

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses  

SciTech Connect (OSTI)

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

Abdel-Baset, A. M.; Rashad, M. [Physics Department, Faculty of Science , Assiut University, Assiut, P.O. Box 71516 (Egypt); Moharram, A. H. [Faculty of Science, King Abdul Aziz Univ., Rabigh Branch, P.O. Box 433 (Saudi Arabia)

2013-12-16T23:59:59.000Z

311

Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE  

SciTech Connect (OSTI)

The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Cho, S.; DiVenere, A.; Wong, G.K.; Ketterson, J.B.; Meyer, J.R.; Hoffman, C.A.

1997-07-01T23:59:59.000Z

312

Preferred orientation of nanoscale order at the surface of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect (OSTI)

We report evidence that as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films contain nanoscale clusters that exhibit a preferred orientation, attributed to the earliest stages of heterogeneous nucleation. Fluctuation transmission electron microscopy reveals structural order in the samples, but (220)-related contributions are suppressed. When homogeneous nucleation is promoted via electron bombardment, the sample remains diffraction amorphous but the (220) contribution appears. We simulated data for randomly oriented nanoscale order using ab initio molecular-dynamics models of Ge{sub 2}Sb{sub 2}Te{sub 5}. The simulated (220) contribution always has larger magnitude than higher-order signals; thus, the lack of the experimental signal indicates a significant preferred orientation.

Tony Li, Tian; Abelson, John R. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States) [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Hoon Lee, Tae; Elliott, Stephen R. [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)] [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

2013-11-11T23:59:59.000Z

313

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection  

SciTech Connect (OSTI)

Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6??m. At 77?K, the photodiode exhibited a peak responsivity of 4.8?A/W, corresponding to a quantum efficiency of 46% at ?300?mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7?A/cm{sup 2}, it provided a specific detectivity of 1.4?×?10{sup 10} Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50?K.

Hoang, A. M.; Chen, G.; Chevallier, R.; Haddadi, A.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

2014-06-23T23:59:59.000Z

314

Dynamical scaling properties of nanoporous undoped and Sb-doped SnO{sub 2} supported thin films during tri- and bidimensional structure coarsening  

SciTech Connect (OSTI)

The coarsening of the nanoporous structure developed in undoped and 3% Sb-doped SnO{sub 2} sol-gel dip-coated films deposited on a mica substrate was studied by time-resolved small-angle x-ray scattering (SAXS) during in situ isothermal treatments at 450 and 650 deg. C. The time dependence of the structure function derived from the experimental SAXS data is in reasonable agreement with the predictions of the statistical theory of dynamical scaling, thus suggesting that the coarsening process in the studied nanoporous structures exhibits dynamical self-similar properties. The kinetic exponents of the power time dependence of the characteristic scaling length of undoped SnO{sub 2} and 3% Sb-doped SnO{sub 2} films are similar ({alpha}{approx_equal}0.09), this value being invariant with respect to the firing temperature. In the case of undoped SnO{sub 2} films, another kinetic exponent, {alpha}{sup '}, corresponding to the maximum of the structure function was determined to be approximately equal to three times the value of the exponent {alpha}, as expected for the random tridimensional coarsening process in the dynamical scaling regime. Instead, for 3% Sb-doped SnO{sub 2} films fired at 650 deg. C, we have determined that {alpha}{sup '}{approx_equal}2{alpha}, thus suggesting a bidimensional coarsening of the porous structure. The analyses of the dynamical scaling functions and their asymptotic behavior at high q (q being the modulus of the scattering vector) provided additional evidence for the two-dimensional features of the pore structure of 3% Sb-doped SnO{sub 2} films. The presented experimental results support the hypotheses of the validity of the dynamic scaling concept to describe the coarsening process in anisotropic nanoporous systems.

Santilli, C. V.; Rizzato, A. P.; Pulcinelli, S. H.; Craievich, A. F. [Instituto de Quimica/UNESP, P.O. Box 355, Araraquara, Sao Paulo 14800-900 (Brazil); Instituto de Fisica/USP, P.O. Box 66318, Sao Paulo, Sao Paulo 05315-970, (Brazil)

2007-05-15T23:59:59.000Z

315

Supplementary Information N. Vidal, J.-C. Rage, A. Couloux, and S.B. Hedges. Snakes (Serpentes). Pp. 390397 in The Timetree of Life, S. B.  

E-Print Network [OSTI]

1 Supplementary Information N. Vidal, J.-C. Rage, A. Couloux, and S.B. Hedges. Snakes (Serpentes-TCC-ATG-TCR-ATR-GGG-GA-3' (Vidal and Hedges, 2005) for the JUN gene; LAM2D, 5'-TAY-CCA-CRK-TAY-DSY-TAT-GAR-CC-3' (Vidal. References Mortlock, D.P., Sateesh, P., Innis, J.W., 2000. Evolution of N-terminal sequences

Hedges, Blair

316

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots  

SciTech Connect (OSTI)

Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5?nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2014-10-07T23:59:59.000Z

317

Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.  

SciTech Connect (OSTI)

Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

Overmyer, Donald L.; Webb, Edmund Blackburn, III (,; ); Siegal, Michael P.; Yelton, William Graham

2006-11-01T23:59:59.000Z

318

Neutron diffraction studies on the Heusler alloy Ni{sub 50}Mn{sub 37}Sb{sub 13}  

SciTech Connect (OSTI)

The evolution of martensitic to austenitic transformation in Ni{sub 50}Mn{sub 37}Sb{sub 13} has been studied usingtemperature dependent neutron diffraction, thermal property, and magnetization studies. Differential scanning calorimetric studies reveal a martensitic transformation T{sub M} around 291 K. The magnetization data yield a ferromagnetic ordering temperature of 329 K in the austenitic phase and 230 K in the martensitic phase. The analysis of the powder neutron diffraction data in the temperature range of 325-12 K indicates a structural transition from a high temperature cubic L2{sub 1} type structure to an orthorhombic structure. At 270 K, both cubic and orthorhombic phases coexist. Anisotropic unit cell changes are observed at the martensitic transformation: The unit cell expands by about 1.5% along the a axis, by about 2.5% along the c axis, and compresses by about 4.28% along the b axis. Both cubic and orthorhombic phases show commensurate collinear ferromagnetic ordering with a magnetic moment of {approx}3.67 {mu}{sub B}/Mn in Mn (2a and 2f) sites.

Rama Rao, N. V.; Chelvane, J. Arout; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Hyderabad 500 058 (India); Morozkin, A. V. [Department of Chemistry, Moscow Lomonosov State University, Moscow 119992 (Russian Federation); Lamsal, J. [Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211 (United States); Yelon, W. B. [Materials Research Center and Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States); Nirmala, R. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India); Suresh, K. G. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400 076 (India); Malik, S. K. [International Institute of Physics (IIP)-UFRN, Natal, 59072-970 (Brazil)

2011-04-01T23:59:59.000Z

319

THE IMPACT OF A TANK 40H DECANT ON THE PROJECTED OPERATING WINDOWS FOR SB4 AND GLASS SELECTION STRATEGY IN SUPPORT OF THE VARIABILITY STUDY  

SciTech Connect (OSTI)

The Liquid Waste Organization (LWO) has requested that the Savannah River National Laboratory (SRNL) to assess the impact of a 100K gallon decant volume from Tank 40H on the existing sludge-only Sludge Batch 4 (SB4)-Frit 510 flowsheet and the coupled operations flowsheet (SB4 with the Actinide Removal Process (ARP)). Another potential SB4 flowsheet modification of interest includes the addition of 3 wt% sodium (on a calcined oxide basis) to a decanted sludge-only or coupled operations flowsheet. These potential SB4 flowsheet modifications could result in significant compositional shifts to the SB4 system. This paper study provides an assessment of the impact of these compositional changes to the projected glass operating windows and to the variability study for the Frit 510-SB4 system. The influence of the compositional changes on melt rate was not assessed in this study nor was it requested. Nominal Stage paper study assessments were completed using the projected compositions for the various flowsheet options coupled with Frit 510 (i.e., variation was not applied to the sludge and frit compositions). In order to gain insight into the impacts of sludge variation and/or frit variation (due to the procurement specifications) on the projected operating windows, three versions of the Variation Stage assessment were performed: (1) the traditional Variation Stage assessment in which the nominal Frit 510 composition was coupled with the extreme vertices (EVs) of each sludge, (2) an assessment of the impact of possible frit variation (within the accepted frit specification tolerances) on each nominal SB4 option, and (3) an assessment of the impact of possible variation in the Frit 510 composition due to the vendor's acceptance specifications coupled with the EVs of each sludge case. The results of the Nominal Stage assessment indicate very little difference among the various flowsheet options. All of the flowsheets provide DWPF with the possibility of targeting waste loadings (WLs) from the low 30s to the low 40s with Frit 510. In general, the Tank 40H decant has a slight negative impact on the operating window, but DWPF still has the ability to target current WLs (34%) and higher WLs if needed. While the decant does not affect practical WL targets in DWPF, melt rate could be reduced due to the lower Na{sub 2}O content. If true, the addition of 3 wt% Na{sub 2}O to the glass system may regain melt rate, assuming that the source of alkali is independent of the impact on melt rate. Coupled operations with Frit 510 via the addition of ARP to the decanted SB4 flowsheet also appears to be viable based on the projected operating windows. The addition of both ARP and 3 wt% Na{sub 2}O to a decanted Tank 40H sludge may be problematic using Frit 510. Although the Nominal Stage assessments provide reasonable operating windows for the SB4 flowsheets being considered with Frit 510, introduction of potential sludge and/or frit compositional variation does have a negative impact. The magnitude of the impact on the projected operating windows is dependent on the specific flowsheet options as well as the applied variation. The results of the traditional Variation Stage assessments indicate that the three proposed Tank 40H decanted flowsheet options (Case No.2--100K gallon decant, Case No.3--100K gallon decant and 3 wt% Na{sub 2}O addition and Case No.4--100K gallon decant and ARP) demonstrate a relatively high degree of robustness to possible sludge variation over WLs of interest with Frit 510. However, the case where the addition of both ARP and 3 wt% Na{sub 2}O is considered was problematic during the traditional Variation Stage assessment. The impact of coupling the frit specifications with the nominal SB4 flowsheet options on the projected operating windows is highly dependent on whether the upper WLs are low viscosity or liquidus temperature limited in the Nominal Stage assessments. Systems that are liquidus temperature limited exhibit a high degree of robustness to the applied frit and sludge variation, while those that are low viscosity li

Raszewski, F; Tommy Edwards, T; David Peeler, D

2008-02-07T23:59:59.000Z

320

MECHANISMS OF PHASE FORMATION IN THE VITRIFICATION OF HIGH-FERROUS SAVANNAH RIVER SITE SB2 HLW SLUDGE SURROGATE - 9300  

SciTech Connect (OSTI)

Phase formation mechanisms associated with the vitrification of high-ferrous Savannah River Site (SRS) Sludge Batch 2 (SB2) high level waste surrogate were studied by infrared spectroscopy (IRS) and X-ray diffraction (XRD). Two mixtures at 50 wt% waste loading with commercially available Frit 320 (Li{sub 2}O - 8 wt %, B{sub 2}O{sub 3} - 8 wt %, Na{sub 2}O - 12 wt %, SiO{sub 2} - 72 wt %) and batch chemicals (LiOH {center_dot} H{sub 2}O, H{sub 3}BO{sub 3}, NaNO{sub 3}, SiO{sub 2}) to represent the frit formulation were prepared as slurries with a water content of {approx}50 wt%. The mixtures were air-dried at a temperature of 115 C and heat-treated at 500, 700, 900, 1000, 1100, 1200, and 1300 C for 1 hr at each temperature. Infrared spectra and XRD patterns of the products produced at each temperature were recorded. In both mixtures prepared using frit and batch chemicals to represent the frit, phase formation reactions were completed within the temperature range between 900 and 1000 C. However, residual quartz was still present in glass produced from the mixture with batch chemicals even at 1100 C. Although, the phase composition and structure of the glassy products obtained from both mixtures at temperatures over 1000 C were similar, the products obtained from the mixture using actual frit were more homogeneous than those from the mixture with batch chemicals. Thus, the use of frit rather than batch chemicals reduced the temperature range of phase formation and provided for production of higher quality glass.

Marra, J

2008-08-27T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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321

Constitutional Environment and Entrepreneurship: An Empirical Study  

E-Print Network [OSTI]

Malta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia Netherlands

Zhang, Wei

2012-01-01T23:59:59.000Z

322

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction  

E-Print Network [OSTI]

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

2013-03-11T23:59:59.000Z

323

Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}  

SciTech Connect (OSTI)

The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

Guo Yun, E-mail: apharm@sina.com; Zhang Miao [Zhejiang University of Technology, College of Pharmaceutical Sciences (China); Shen Liang [Hangzhou Normal University, College of Material Chemistry and Chemical Engineering (China); Jin Yingying; Jin Zhimin [Zhejiang University of Technology, College of Pharmaceutical Sciences (China)

2010-12-15T23:59:59.000Z

324

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells  

SciTech Connect (OSTI)

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-03-28T23:59:59.000Z

325

Nepheloid layer distribution in the Benguela upwelling area offshore Namibia.  

E-Print Network [OSTI]

at the shelf break feeds a major intermediate nepheloid layer (INL) at 25.51S. This INL is positioned at 250

Mohrholz, Volker

326

Namibia-UNEP Green Economy Advisory Services | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus AreaDataBus Jump to:NSTARNamibia-UNEP Green Economy

327

Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)  

SciTech Connect (OSTI)

P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, M. [GM Research and Development Center; Waldo, R.A. [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation; Cai, Wei [ORNL; Wang, Hsin [ORNL

2012-01-01T23:59:59.000Z

328

Magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloys in the temperature range 2 to 50 K  

SciTech Connect (OSTI)

The superconducting quantum interferometer device with Josephson junctions (SQUID magnetometer) is used to study the temperature dependences of the magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloy crystals in the temperature range 2 to 50 K, at the magnetic field vector H orientations H perpendiular C{sub 3} and H Up-Tack C{sub 3} with respect to the crystal trigonal axis C{sub 3}. It is found that the magnetic susceptibility of the ion core of the samples under study is {chi}{sup G} = -0.35 Multiplication-Sign 10{sup -6} cm{sup 3}/g, the contribution of lattice defects to magnetic susceptibility can be disregarded, and the contribution of free carriers is of a diamagnetic nature in the entire studied temperature range. It is shown that the contribution of free carriers to the resulting magnetic susceptibility and its anisotropy can be described within the Pauli and Landau-Peierls approach. In calculating the magnetic susceptibility, taking into account the constant concentration of free carriers in the state of pronounced degeneracy, it is found that the temperature dependence of the anisotropic effective masses varies with crystal chemical composition. This is possibly associated with the complex structure of the valence band and its variation as the Sb{sub 2}Te{sub 3} content in the alloy increases.

Stepanov, N. P., E-mail: np-stepanov@mail.ru [Chernishevsky Zabaikalsky State Humanitarian Pedagogical University (Russian Federation); Nalivkin, V. U. [Chita State University (Russian Federation); Potapov, G. A. [Chernishevsky Zabaikalsky State Humanitarian Pedagogical University (Russian Federation)

2012-01-15T23:59:59.000Z

329

Stimulated crystallization of melt-quenched Ge{sub 2}Sb{sub 2}Te{sub 5} films employing femtosecond laser double pulses  

SciTech Connect (OSTI)

The phase transformation of Ge{sub 2}Sb{sub 2}Te{sub 5} films from the melt-quenched amorphous phase into the crystalline phase induced by 800 nm, 100 fs laser pulses has been studied. For partly amorphized films, progressive crystallization could be induced by single pulses, which can be explained by growth of already existing crystalline embryos. For completely amorphized films, it was not possible to induce crystallization with one or two consecutive pulses; three pulses being the threshold for the onset of crystallization. By employing a fs laser double pulse with an adjustable inter-pulse delay, partial crystallization could be triggered for a delay range of 200 fs-100 ps, while for longer delays no crystallization was possible. The time window for stimulated crystallization can be related to the relaxation dynamics of free electrons excited by the first pulse, which are further excited by the second pulse still remaining in the excited state. Our results indicate that the lifetime of excited electrons in melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} is Almost-Equal-To 100 ps.

Cotton, Rebecca L.; Siegel, Jan [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)

2012-12-15T23:59:59.000Z

330

2 I E E E S o f t wa r E Pu b l i s h e d b y t h e I EEE C o m p u t e r S o c i e t y 0 74 0 -74 5 9 / 0 9 / $ 2 5 . 0 0 2 0 0 9 I E E E The bazaar has three major advantages over  

E-Print Network [OSTI]

and Prosumers End-user development (EUD) aims to enable end users "at some point to create, modify, or extend engineering superscript #12;September/October 2009 I E E E S o f t wa r E 3 the bazaar: the prosumer. A prosumer serves as producer and consumer. If appropriate, the pro- sumer produces the goods he or she and

331

Thermoelectric properties of chalcopyrite type CuGaTe2 and chalcostibite CuSbS2 Vijay Kumar Gudelli, V. Kanchana, G. Vaitheeswaran, A. Svane, and N. E. Christensen  

E-Print Network [OSTI]

of zT ¼ 1.4, confirming that CuGaTe2 is a promising material for high temperature thermoelectric and concentration suggests that CuSbS2 will be a good thermoelectric material at low temperatures, similarly Thermoelectric (TE) materials with potential applica- tions within power generation and refrigeration have repre

Svane, Axel Torstein

332

Crystal structure and high temperature transport properties of Yb-filled p-type skutterudites Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}  

SciTech Connect (OSTI)

Partially Yb-filled Fe substituted polycrystalline p-type skutterudites with nominal compositions Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}, with varying filler concentrations x, were synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot-pressing. The compositions and filling fractions were confirmed with a combination of Rietveld refinement and elemental analysis. Their thermoelectric properties were evaluated from 300 to 800 K. The Seebeck coefficients for the specimens increase with increasing temperature and plateau at around 750 K. The thermal conductivity decreases with increasing Yb filling fraction, and bipolar conduction becomes evident and increases at elevated temperatures. A maximum ZT value of 0.8 was obtained at 750 K for Yb{sub 0.47}Co{sub 2.6}Fe{sub 1.4}Sb{sub 12}. The thermoelectric properties and potential for further optimization are discussed in light of our results. - Graphical abstract: Display Omitted - Highlights: • Yb-filled Fe-substituted p-type CoSb{sub 3} skutterudites, Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}, were structurally and physically characterized. • Both filling fraction and Co-to-Fe ratio affect the transport properties. • High ZT was obtained for the composition with ?50% Yb filling and a slightly lower than nominal Fe content.

Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Puneet, Pooja; Tritt, Terry M. [Department of Physics and Astronomy, Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States); Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States)

2014-01-15T23:59:59.000Z

333

Inverter Eligibility Listing Procedure for Solar Electric Incentive Programs Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and inverters must be listed on  

E-Print Network [OSTI]

(Maximum Continuous Output Power, Conversion Efficiency, and Tare Losses) and weighted inverter efficiencyInverter Eligibility Listing Procedure for Solar Electric Incentive Programs Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and inverters must be listed

334

Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films  

SciTech Connect (OSTI)

We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2014-08-25T23:59:59.000Z

335

Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy  

SciTech Connect (OSTI)

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Zhao, Xin-Hao [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-11-04T23:59:59.000Z

336

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

337

Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate  

SciTech Connect (OSTI)

We have demonstrated experimentally the InP-based “M”-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41??m at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234?W/cm{sup 2} and 20.5?cm{sup ?1}, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of “M”-type QW laser was superior to the inverse “W”-type one due to its thinner barrier for holes. Further improvement of the “M”-type QW structure could lead to a cost-effective mid-infrared light source.

Chang, Chia-Hao; Li, Zong-Lin; Pan, Chien-Hung; Lu, Hong-Ting; Lee, Chien-Ping; Lin, Sheng-Di, E-mail: sdlin@mail.nctu.edu.tw [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-02-14T23:59:59.000Z

338

Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)  

SciTech Connect (OSTI)

The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

2014-01-01T23:59:59.000Z

339

212 Union Ave, SE Olympia, WA 98501  

E-Print Network [OSTI]

capacity, energy and operational characteristics by conservation and renewables, particularly given, the nation, and nations around the world begin to document and seek to reduce the amount of greenhouse gas). More fossil fuel helped meet the demands of economic growth, since the region's hydropower system lost

340

Sumas, WA LNG Imports from Canada  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelinesProved ReservesFeet)per Thousand Cubic Feet) DecadeCubic Feet)Year1363309,516

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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341

Sumas, WA Natural Gas Exports to Canada  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelinesProved ReservesFeet)per Thousand Cubic Feet) DecadeCubicfrom Canada (Million

342

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine:Barbers Point Housing,Illinois:CountyNew York: Energy Resources

343

Classroom Vocabulary Classroom Vocabulary [msamiati wa darasani  

E-Print Network [OSTI]

] [wall clock] [map / maps] [air conditioner / air conditioners] [picture / pictures] [drawing / drawings

344

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Broader source: Energy.gov (indexed) [DOE]

to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time;...

345

Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds  

SciTech Connect (OSTI)

The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

Seo, J.; Park, K.; Lee, C.; Kim, J.

1997-07-01T23:59:59.000Z

346

Construction integrity assessment report (ETN-98-0005) S-Farm overground transfer (OGT) system valve pit 241-S-B to valve pit 241-S-D  

SciTech Connect (OSTI)

The S-Farm overground transfer (OGT) line will bypass the existing line(s), between valve pits 241-S-B and 241-S-D that no longer meet system requirements. The new OGT line will provide a waste transfer pipeline between these valve pits in support of saltwell pumping activities. The length of the OGT line is approximately 180 ft from pit to pit. The primary pipe is nominal 1-in. diameter stainless steel (SST) braided Ethylene-propylene Diene Monomer (EPDM) hose. The encasement pipe is a nominal 3-in., flanged, SST pipe made up of several different length pipe spool pieces (drawing H-2-829564, sh. 1 and sh. 2). The OGT line slopes from valve pit 241-S-B toward valve pit 241-S-D. At each end, the primary and encasement pipe connect to a pit entry spool piece. The pit entry spool pieces are constructed of prefabricated SST materials. These spool pieces allow for the separation of the primary and encasement pipelines after the pipes have entered the valve pits (drawing H-2-818280, sh. 2). The pit entry spool pieces also allow for leak detection of the encasement pipe at each end (drawing H-2-829564, sh. 2). The OGT encasement pipeline is supported above ground by adjustable height unistrut brackets and precast concrete bases (drawing H-2-829654, sh. 1). The pipeline is heat-traced and insulated. The heat tracing and insulation supply and retain latent heat that prevents waste solidification during transfers and provides freeze protection. The total length of the pipeline is above ground, thereby negating the need for cathodic corrosion protection. This Construction Integrity Assessment Report (CIAR) is prepared by Fluor Daniel Northwest for Numatec Hanford Corporation/Lockheed Martin Hanford Corporation, the operations contractor, and the U. S. Department of Energy, the system owner. The CIAR is intended to verify that construction was performed in accordance with the provisions of Washington Administrative Code, WAC-173-303-640 (3) (c), (e), (f) and (h).

HICKS, D.F.

1999-08-12T23:59:59.000Z

347

Synthesis, characterization and physical properties of the skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4)  

SciTech Connect (OSTI)

The skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im3{sup Macron} (a Almost-Equal-To 9.1 A) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe{sub 2}Ni{sub 2}Sb{sub 12} confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2{<=}T/K{<=}300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis. - Graphical abstract: The filled skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The thermoelectric performance depends strongly on the Yb content. The physical properties and thermal stability of the compounds are further discussed in comparison with the current state-of-the art thermoelectric skutterudites. Highlights: Black-Right-Pointing-Pointer A new series of skutterudites has been prepared and characterised. Black-Right-Pointing-Pointer Physical properties are affected by the degree of Yb filling. Black-Right-Pointing-Pointer The highest thermoelectric performance is found for Yb{sub 0.15}Fe{sub 2}Ni{sub 2}Sb{sub 12}. Black-Right-Pointing-Pointer The skutterudites decompose in air above 550 K.

Kaltzoglou, Andreas; Vaqueiro, Paz [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)] [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Knight, Kevin S. [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom)] [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom); Powell, Anthony V., E-mail: a.v.powell@hw.ac.uk [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

2012-09-15T23:59:59.000Z

348

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect (OSTI)

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

349

Metal-insulator transitions induced by doping in LaNiO{sub 3}: LaNi{sub 0.95}M{sub 0.05}O{sub 3} (M = Mo, W, Sb, Ti, Cu, Zn) perovskites  

SciTech Connect (OSTI)

Structural characterization and electronic properties of the LaNi{sub 0.95}M{sub 0.05}O{sub 3} (M = Mo, W, Sb, Ti, Cu, Zn) perovskite-like system are reported. These compounds can be regarded as being derived from LaNiO{sub 3} by partial substitution of Ni{sup 3+} in this material by M{sup 6+}, M{sup 5+}, M{sup 4+}, or M{sup 2+} formal cations, with a partial reduction of Ni{sup 3+} to Ni{sup 2+} taking place. X-ray powder diffraction data were analyzed by means of the Rietveld method and show that all the title materials present perovskite-type structure with a rhombohedral (S.G. R{bar 3}c) or orthorhombic (S.G. Pbnm) symmetry, depending on the nature of the M cation. In all cases, Ni and M cations are placed at random in octahedral B-sites of perovskite structure. Electrical resistivity measurements (four probe method) show metal-to-insulator (M-I) transitions for M = Mo, W, Ti, Cu, Zn at temperatures of about 50K and a semiconductor behavior for the Sb sample in the whole temperature range explored. Magnetic susceptibility measurements show the presence of weak ferromagnetic interactions for M = Sb and Pauli paramagnetism for the remaining compounds.

Alvarez, I.; Veiga, M.L.; Pico, C. [Univ. Complutense, Madrid (Spain)] [Univ. Complutense, Madrid (Spain)

1998-03-01T23:59:59.000Z

350

Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films  

SciTech Connect (OSTI)

A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q?=?0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.

Secor, Jeff; Zhao, Lukas; Krusin-Elbaum, Lia [The Graduate Center, CUNY, New York, New York 10016 (United States); Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Harris, Matt A.; Deng, Haiming [Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Raoux, Simone [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2014-06-02T23:59:59.000Z

351

Assessment of RELAP5/MOD3.1 with the LSTF SB-SG-06 experiment simulating a steam generator tube rupture transient  

SciTech Connect (OSTI)

The objective of the present work is to identify the predictability of RELAP5/MOD3.1 regarding thermal-hydraulic behavior during a steam generator tube rupture (SGTR). To evaluate the computed results, LSTF SB-SG-06 test data simulating the SGTR that occurred at the Mihama Unit 2 in 1991 are used. Also, some sensitivity studies of the code change in RELAP5, the break simulation model, and the break valve discharge coefficient are performed. The calculation results indicate that the RELAP5/MOD3.1 code predicted well the sequence of events and the major phenomena during the transient, such as the asymmetric loop behavior, reactor coolant system (RCS) cooldown and heat transfer by natural circulation, the primary and secondary system depressurization by the pressurizer auxiliary spray and the steam dump using the intact loop steam generator (SG) relief valve, and so on. However, there are some differences from the experimental data in the number of the relief valve cycling in the affected SG, and the flow regime of the hot leg with the pressurizer, and the break flow rates. Finally, the calculation also indicates that the coolant in the core could remain in a subcooled state as a result of the heat transfer caused by the natural circulation flow even if the reactor coolant pumps (RCPs) turned off and that the affected SG could be properly isolated to minimize the radiological release after the SGTR.

Seul, K.W.; Bang, Y.S.; Lee, S.; Kim, H.J. [Korea Inst. of Nuclear Safety, Taejon (Korea, Republic of)

1996-09-01T23:59:59.000Z

352

Spectroscopic Study of (two-dimensional) Molecule-based Magnets: [MII(TCNE)(NCMe)2][SbF6] (M = Fe Mn Ni)  

SciTech Connect (OSTI)

The M-[TCNE] (M = 3d metal; TCNE = tetracyanoethylene) system is one of the most interesting classes of molecule-based magnets, exhibiting a plethora of compositions and structures (inorganic polymer chains, 2D layers, 3D networks, and amorphous solids) with a wide range of magnetic ordering temperatures (up to 400 K). A systematic study of vibrational (both infrared and, for the first time, Raman) properties of the family of new TCNE-based magnets of M{sup II}(TCNE) (NCMe){sub 2}[SbF{sub 6}] [M = Mn, Fe, Ni] composition is discussed in conjunction with their magnetic behavior and newly resolved crystal structures. The vibrational properties of the isolated TCNE{sup {sm_bullet}-} anion in the paramagnetic Bu{sub 4}N [TCNE{sup {sm_bullet}-}] salt and recently characterized 2D layered magnet Fe{sup II}(TCNE)(NCMe){sub 2}[FeCl{sub 4}] are also reported for comparison. Additionally, a linear correlation between {nu}{sub c=c} (a{sub g}) frequency of the TCNE ligand and its formal charge Z (the spin density on the {pi}* orbital), Z = [1571 - {nu}{sub C=C} (ag)]/154.5 [e], is presented. It is shown that monitoring Z by Raman spectroscopy is of great use in providing information that allows understanding the peculiarity of the superexchange interaction in M-[TCNE] magnets and establishing the structure-magnetic properties correlations in this class of magnetic material.

C Olson; C Heth; S Lapidus; P Stephens; G Halder; K Pokhodnya

2011-12-31T23:59:59.000Z

353

Electrical and thermal properties of Fe substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} skutterudites  

SciTech Connect (OSTI)

Fe-substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} (x=0.1, y=0.2 and z=0.0-0.4 nominal) compounds were synthesized using a melting-annealing-spark plasma sintering (SPS) method. Their thermoelectric properties were assessed by measuring the Seebeck coefficient, electrical conductivity, thermal conductivity and the Hall coefficient. The sign of the Hall coefficient indicates that electrons are the dominant carriers in all compounds except Ba{sub 0.1}Yb{sub 0.2}Fe{sub 0.4}Co{sub 3.6}Sb{sub 12}. The temperature dependence of the electrical conductivity and the carrier concentration reflect the transition from extrinsic to intrinsic behavior depending on the amount of Fe substituted for Co. Jonker and Ioffe analyses are applied to Fe-substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} compounds in order to evaluate the range of minimum and maximum power factors achievable in n-type filled skutterudite compounds at room temperature (300 K). The predicted maximum room temperature power factor values in the range of 15-45 {mu}W/K{sup 2} cm are comparable to experimentally reported values of n-type skutterudite compounds. - Graphical abstract: Room temperature Jonker plot of Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} samples. Highlights: Black-Right-Pointing-Pointer The TE properties of Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} compounds were investigated. Black-Right-Pointing-Pointer Jonker and Ioffe analysis applied in order to predict the range of power factor achievable at room temperature. Black-Right-Pointing-Pointer The thermal conductivity is strongly suppressed with increasing of Fe substitution on Co site. Black-Right-Pointing-Pointer We see that small quantities of Fe on Co site is beneficial on enhancement ZT value.

Ballikaya, Sedat, E-mail: sedatballikaya@yahoo.com [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Uzar, Neslihan; Yildirim, Saffettin [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Salvador, James R. [Chemical Sciences and Materials Systems Laboratory, General Motors Global R and D Center, Warren, MI 48090 (United States)

2013-01-15T23:59:59.000Z

354

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI...  

Broader source: Energy.gov (indexed) [DOE]

A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such...

355

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk...  

Broader source: Energy.gov (indexed) [DOE]

The roof would protect the process against harsh weather and also accommodate built-in biogas storage. Biogas generated from the anaerobic digester would be routed to the combined...

356

Synthesis and structural and magnetic characterization of the frustrated magnetic system La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6}  

SciTech Connect (OSTI)

We report the synthesis of double perovskites La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6} with x=0, 1/3, 2/3 and 1 by a solid state method. Rietveld refinements of X-ray and neutron powder diffraction data show that all samples crystallize in space group P2{sub 1}/n, with almost perfect occupation of the 2d octahedral site with the transition metals, while all Sb{sup 5+} are randomly distributed in a 2c octahedral site. The saturation magnetization in hysteresis loops indicates that the samples are ferrimagnetic throughout all the series. Virgin magnetization curves lie outside hysteresis loops at low temperatures and thermal evolution of H{sub m} – defined as the inflection point of these curves – follows the de Almeida–Thouless dependence for x?0. This spin glass like behavior below 30 K is also supported by thermal evolution of the coercivity, which follows an exponential law typical of magnetic clusters, not found in the pure Ni{sup 2+} perovskite, x=0 extreme. - Graphical abstract: Display Omitted - Author-Highlights: • We synthesized new double perovskites: La{sub 2}Ni{sub 4/3?x}Co{sub x}SbO{sub 6} (x=1/3, 2/3, 1). • The cations occupying octahedral sites are highly ordered in all samples. • Magnetic transition occurs as a consequence of superexchange paths. • Frustration is found and attributed to competition between different interactions.

Franco, D.G., E-mail: diego.g.franco@cab.cnea.gov.ar [Laboratorio de Bajas Temperaturas, Centro Atómico Bariloche (CNEA), 8400 Bariloche, Río Negro (Argentina); INFIQC-CONICET, Dpto. de Físico-Química, Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ciudad Universitaria, X5000HUA Córdoba (Argentina); Carbonio, R.E. [INFIQC-CONICET, Dpto. de Físico-Química, Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ciudad Universitaria, X5000HUA Córdoba (Argentina); Nieva, G. [Laboratorio de Bajas Temperaturas, Centro Atómico Bariloche (CNEA), 8400 Bariloche, Río Negro (Argentina); Instituto Balseiro (CNEA-UNCuyo) Centro Atómico Bariloche, 8400 Bariloche, Río Negro (Argentina)

2013-11-15T23:59:59.000Z

357

Thermoelectric properties of composites made of Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6} and fullerene  

SciTech Connect (OSTI)

About 18 g of Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6} were prepared by heating the elements in the stoichiometric ratio at 1000 K. The product was divided into four parts, and then C{sub 60} was added to three of these four parts at 1, 2, and 3 mass%, respectively. Each part was hot-pressed at 150 MPa and 923 K. The sample with 1% C{sub 60} was characterized via a Rietveld refinement and TEM analyses. Measurements of the three thermoelectric key properties revealed that the Seebeck coefficient barely depends on the carbon amount added, while both the electrical and the thermal conductivity decrease with increasing amount of carbon. Depending on the amount of C{sub 60} used and on the temperature, the thermoelectric performance was either enhanced or decreased, depending on whether the electrical conductivity decreased less or more than the thermal conductivity. At the highest temperature measured, all carbon-containing samples performed better than the unmodified bulk sample, namely up to 14%. These improvements are within the error margin, however. - Graphical abstract: Figure-of-merit of various Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6}/C composites. - Highlights: • Composites of Mo{sub 3}(Sb,Te){sub 7} materials with C{sub 60} were synthesized and characterized. • The carbon additions form amorphous nanoparticles with sizes of the order of 50 nm. • The Seebeck effect remains basically unaffected from the carbon additions. • Electrical and thermal conductivity decrease differently with increasing carbon content. • The figure-of-merit was slightly improved, most noteworthy at higher temperatures.

Nandihalli, Nagaraj [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Lahwal, Ali; Thompson, Daniel; Holgate, Tim C.; Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, SC, USA 29634 (United States); Dassylva-Raymond, Véronique; Kiss, László I. [Département des sciences appliqués, Université du Québec à Chicoutimi, Chicoutimi, QC, Canada G7H 2B1 (Canada); Sellier, Elisabeth [CREMEM, Université de Bordeaux, F-33405 Talence (France); Gorsse, Stéphane [CNRS, Universite de Bordeaux, ICMCB, F-33600 Pessac (France); Kleinke, Holger, E-mail: kleinke@uwaterloo.ca [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

2013-07-15T23:59:59.000Z

358

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect (OSTI)

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

359

Structural, electrical, and thermoelectrical properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} alloys prepared by a conventional melting technique  

SciTech Connect (OSTI)

Polycrystalline solid solutions of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} (x = 0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi{sub 2}Se{sub 3} in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100-420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x = 0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 {mu}W K{sup -2} cm{sup -1} and recorded for the x = 0.05 compound.

Shokr, E. Kh.; Ibrahim, E. M. M., E-mail: e.ibrahim@science.sohag.edu.eg; Abdel Hakeem, A. M.; Adam, A. M. [Sohag University, Physics Department, Faculty of Science (Egypt)] [Sohag University, Physics Department, Faculty of Science (Egypt)

2013-01-15T23:59:59.000Z

360

Transport and mechanical property evaluation of (AgSbTe){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87, 0.90)  

SciTech Connect (OSTI)

(AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics. - Graphical Abstract: Powder X-ray diffraction of TAGS-x (x=0.80, 0.82, 0.85, 0.87 and 0.90) showing characteristic bifurcation indicative of rhombohedral structure.

Salvador, James R., E-mail: james.salvador@gm.c [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Yang, J. [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Shi, X. [Optimal, Inc. Plymouth Township, MI 48170 (United States); Wang, H.; Wereszczak, A.A. [High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2009-08-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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361

The influence of semiconductive binary Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} system on electrical conductivity property of epoxy composites  

SciTech Connect (OSTI)

The purpose of this study is to develop the semiconductive composites. Semiconducting glass (SG) binary system Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} in mole ratio 1:1 was synthesized and was doped with I{sub 2}. Next, electrically conductive DGEBA-type epoxy resin (ER)/SG-filled composites and epoxy toluene oligomer (ETO) modified epoxy resin-SG filled composites were developed with 3–10 wt. % of fillers and characterized. As a result, the effects of the modifier and amount of semiconductive filler on the electrical properties of commercial epoxy resin were examined. Percolation concentration was 7 wt. % for all composites. For the SG-reinforced composites, the dispersion of the fillers is investigated by X-ray diffraction (XRD) and by scanning electron microscopy (SEM)

Soydal, Ulku, E-mail: usoydal@selcuk.edu.tr; Ahmetli, Gulnare, E-mail: usoydal@selcuk.edu.tr; Kocaman, Suheyla, E-mail: usoydal@selcuk.edu.tr [Department of Chemical Engineering, Faculty of Engineering, Selcuk University, 42031 Konya (Turkey)

2014-05-15T23:59:59.000Z

362

Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi{sub 0.88}Sb{sub 0.12} single crystals  

SciTech Connect (OSTI)

The components of resistivity ({rho}{sub ij}), Hall coefficient (R{sub ijk}), and magnetoresistance ({rho}{sub ij,kl}) of n-Bi{sub 0.88}Sb{sub 0.12} single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as m{sub 2}*/m{sub l}* = 3 and b Almost-Equal-To 0.16, respectively.

Tairov, B. A., E-mail: btairov@physics.ab.az; Ibragimova, O. I., E-mail: ofeliya_i@physics.ab.az; Rahimov, A. H. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Brazis, R., E-mail: brazis@pfi.lt [Semiconductor Physics Institute (Lithuania)

2011-02-15T23:59:59.000Z

363

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction  

SciTech Connect (OSTI)

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)] [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States) [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China)] [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)] [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China) [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States) [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15T23:59:59.000Z

364

Microstructure, mechanical properties, and thermoelectric properties of hot-extruded p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds  

SciTech Connect (OSTI)

The p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds with Te dopant (4.0 and 6.0 wt%) and without dopant were fabricated by hot extrusion in the temperature range of 300 to 510 C under an extrusion ratio of 20:1. The undoped and Te doped compounds were highly dense and showed high crystalline quality. The grains contained many dislocations and were fine equiaxed ({approximately}1.0 {micro}m) owing to the dynamic recrystallization during the extrusion. The hot extrusion gave rise to the preferred orientation of grains. The bending strength and the figure of merit of the undoped and Te doped compounds were increased with increasing the extrusion temperature. The Te dopant significantly increased the figure of merit. The values of the figure of merit of the undoped and 4.0 wt% Te-doped compounds hot extruded at 440 C were 2.11 x 10{sup {minus}3}/K and 2.94 x 10{sup {minus}3}/K, respectively.

Park, K.; Seo, J.; Lee, C.

1997-07-01T23:59:59.000Z

365

Microstructure and thermoelectric properties of p-type Bi{sub 0.5}Sb{sub 0.5}Te{sub 0.5} compounds fabricated by hot pressing and hot extrusion  

SciTech Connect (OSTI)

Bismuth telluride (Bi{sub 2}Te{sub 0.5}) compounds have been used as thermoelectric cooling and power conversion materials, since they have a high figure of merit at room temperature and can be fabricated easily and cost effectively. The crystal structure of Bi{sub 2}Te{sub 0.5} at room temperature is rhombohedral (a = 0.438 nm and c = 3.049 nm). This crystal structure is composed of atomic layers in the order of Te/Bi/Te/Te/Bi/Te/Bi/Te/Te/... along the c-axis. The Te/Te layers are considered to be weakly bound with van der Waals-like forces. The electrical and mechanical properties along the directions parallel to the cleavage planes are better than those along the c-axis. The distinct cleavage planes are perpendicular t the c-axis. Owing to the cleavage features, the crystal has poor mechanical properties and fabricating of miniature thermoelectric modules is difficult. Many attempts were made by sintering to fabricate miniature modules without cleavage. However, the sintering technique is not effective because the figure of merit of sintered compounds is lower than that of single crystals. In this work, the authors fabricated the p-type Te-doped Bi{sub 0.5}Sb{sub 0.5}Te{sub 0.5} compounds by both hot pressing and hot extrusion and then investigated the microstructure and thermoelectric properties of the compounds.

Seo, J.; Lee, D.; Lee, C. [Inha Univ., Inchon (Korea, Republic of). Dept. of Metallurgical Engineering] [Inha Univ., Inchon (Korea, Republic of). Dept. of Metallurgical Engineering; Park, K. [Chung-ju National Univ., Chungbuk (Korea, Republic of). Dept. of Materials Engineering] [Chung-ju National Univ., Chungbuk (Korea, Republic of). Dept. of Materials Engineering

1998-01-06T23:59:59.000Z

366

Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam  

SciTech Connect (OSTI)

The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

2014-06-07T23:59:59.000Z

367

Advance Patent Waiver W(A)2011-052  

Broader source: Energy.gov [DOE]

This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000456.

368

Advance Patent Waiver W(A)2011-029  

Broader source: Energy.gov [DOE]

This is a request by W. R. GRACE COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FOA-0000324.

369

Advance Patent Waiver W(A)2013-014  

Broader source: Energy.gov [DOE]

This is a request by W.R GRACE AND CO for a DOE waiver of domestic and foreign patent rights under agreement DE- EE0005991.

370

Advance Patent Waiver W(A)2011-008  

Broader source: Energy.gov [DOE]

This is a request by CERAMATEC, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000395.

371

Title: Advance Patent Waiver W(A)2011-041  

Broader source: Energy.gov [DOE]

This is a request by GENERAL MOTOR for a DOE waiver of domestic and foreign patent rights under agreement DE-AC36-08GO28308.

372

Transit-Oriented Communities: a Blueprint for Bellingham, WA.  

E-Print Network [OSTI]

to plan implementation), Sustainable Design Studio (exploring green building technologies, and national and international sustainable development goals and ideals. Because the problems of the participating classes further build upon the planning concepts developed in planning studio. The program

Zaferatos, Nicholas C.

373

Advance Patent Waiver W(A)2010-049  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43088

374

Advance Patent Waiver W(A)2010-019  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18063

375

Advance Patent Waiver W(A)2009-020  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-NT0005341

376

Advance Patent Waiver W(A)2008-032  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43279

377

Advance Patent Waiver W(A)2006-003  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42418

378

Publications aWaRds,publications,pRoceedings,  

E-Print Network [OSTI]

, "Measurement and analysis of titanium monoxide spectra in laser-induced plasma", Optics Letters 37, Issue 24: Christian G. Parigger, Alexander C. Woods, and Mohammad R. Rezaee, "Atomic Hydrogen and Molecular Carbon Spectra of Aluminum Monoxide in a Solid Propellant Flame", International Review of Atomic and Molecular

Davis, Lloyd M.

379

Advance Patent Waiver W(A)2012-004  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRIC GLOBAL REARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FO0007514.

380

Advance Patent Waiver W(A)2005-053  

Broader source: Energy.gov [DOE]

This is a request by ALLEGHENY TECHNLOGIES WAH CHANG DIVISION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42513.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Advance Patent Waiver W(A)2011-070  

Broader source: Energy.gov [DOE]

This is a request by CASCADE ENGINEERING INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005440.

382

Advance Patent Waiver W(A)2008-005  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43243

383

Advance Patent Waiver W(A)2008-043  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43240

384

Advance Patent Waiver W(A)2012-016  

Broader source: Energy.gov [DOE]

This is a request by LINDE, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007453.

385

Advance Patent Waiver W(A)2006-005  

Broader source: Energy.gov [DOE]

This is a request by AIR PRODUCTS & CHEMICALS for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO85026

386

EIS-0189: Tank Waste Remediation System (TWRS), Richland, WA (Programmatic)  

Broader source: Energy.gov [DOE]

This environmental impact statement evaluates the Department of Energy (DOE)'s, in cooperation with the Washington State Department of Ecology (Ecology), decisions on how to properly manage and dispose of Hanford Site tank waste and encapsulated cesium and strontium to reduce existing and potential future risk to the public, Site workers, and the environment. The waste includes radioactive, hazardous, and mixed waste currently stored in 177 underground storage tanks, approximately 60 other smaller active and inactive miscellaneous underground storage tanks (MUSTs), and additional Site waste likely to be added to the tank waste, which is part of the tank farm system. In addition, DOE proposes to manage and dispose of approximately 1,930 cesium and strontium capsules that are by-products of tank waste. The tank waste and capsules are located in the 200 Areas of the Hanford Site near Richland, Washington.

387

Advance Patent Waiver W(A)2011-028  

Broader source: Energy.gov [DOE]

This is a request by PPG INDUSTRIES, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004736.

388

Advance Patent Waiver W(A)2010-033  

Broader source: Energy.gov [DOE]

This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT01911

389

Advance Patent Waiver W(A)2009-064  

Broader source: Energy.gov [DOE]

This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000303

390

Advance Patent Waiver W(A)2011-002  

Broader source: Energy.gov [DOE]

This is a request by APPLIED MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003838.

391

Advance Patent Waiver W(A)2010-024  

Broader source: Energy.gov [DOE]

This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42469

392

Advance Patent Waiver W(A)2009-048  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT0005310

393

Issaquah Highlands Zero Energy Affordable Housing (WA) - YWCA  

SciTech Connect (OSTI)

The YWCA Family Village at Issaquah, Net Zero Energy Approach Project provides a compelling model for how the nation can seriously respond to the critical need for affordable housing while advancing environmental standards and reducing economic inequities. Affordable housing developments for vulnerable members of the community and in today's workforce cannot overlook issues, such as climate impact, energy security and water conservation. This project's advanced building design was based on the goal of creating a 100 year building that could achieve net zero energy usage if funding had been available to support the final pieces of energy generation. The team worked closely with community stakeholders to ensure the baseline components of high quality and efficient building envelopes along with efficient systems were in place to set the stage for future incorporation of energy generating systems such as solar panels. As built, these 146 homes, large child care center and community services areas are proving the value of investing upfront for the benefit of future generations by reducing ongoing utility and maintenance costs with an eye toward environmental stewardship and community/resident education. The DOE award helped fund two critical energy conservation features for the YWCA Family Village at Issaquah campus: 1) super-insulated roof assembly with a continuous air barrier and 2) domestic hot water preheat system. The roof system at the YWCA Family Village at Issaquah project was built to include 6" of Polyiso rigid insulation (R-38) on top of the roof sheathing to provide a super-insulated roof in line with the other green features of the project. Placing the rigid insulation on top of the roof sheathing allows the building to have a continuous layer of insulation and provides a continuous air barrier. The domestic hot water preheat system includes flat panel arrays on roofs of the buildings that heat the water using solar power, which reduces the amount of heating needed from the gas-fired boilers. The flat-plate panels on the roof of the building heats the water using solar power. A heat exchanger transfers heat from water warmed by the panels to potable water for the units. The warmed potable water mixes with the tap water supply to create hot water for the buildings. This boost of water warmed by the solar panels reduces the heating costs for eh project by reducing the need to heat the water via gas-fired boilers. Both of these energy upgrades were chosen because they significantly improve the energy efficiency for the life of the building and are reducing monthly utility costs for both the residents and the owners. Since the owner is a not-for-profit dedicated to long-term ownership and serving households with very-low and low-incomes, the costs savings will ultimately benefit current and future residents as the dollars saved will either be realized directly by the resident or be invested in the project. Technically, the design of these systems is easily understood and the principles could be applied to other projects. The incremental costs depend largely on the existing market rate of the components-none of which are considered "cutting edge" so a market does currently exist.

Tom, Vincent; DeRobbio, Wendy; Hall, Linda

2012-04-30T23:59:59.000Z

394

Station Processing for a Low Frequency Array in WA  

E-Print Network [OSTI]

for the remote station, minus 2 kW for cooling (considered "infrastructure"). #12;Station Processing Requirements stations (regardless of role as remote or core) (yes; remote stations can be "less" not "different") 2 (yes: 2-3 for core, 1 for remote) 6. Cost: TBD. (Prorated cost of ~US$500 per dual-pol element

Ellingson, Steven W.

395

Advance Patent Waiver W(A)2008-033  

Broader source: Energy.gov [DOE]

This is a request by Whitefox Technologies, Limited for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43090

396

Advance Patent Waiver W(A)2011-024  

Broader source: Energy.gov [DOE]

This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000538.

397

Advance Patent Waiver W(A)2011-036  

Broader source: Energy.gov [DOE]

This is a request by HONEYWELL LABORATORIES for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000544.

398

Advance Patent Waiver W(A)2011-040  

Broader source: Energy.gov [DOE]

This is a request by SYPRIS ELECTRONICS for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000543.

399

Advance Patent Waiver W(A)2011-046  

Broader source: Energy.gov [DOE]

This is a request by ALSTOM GRID INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000551.

400

Advance Patent Waiver W(A)2011-020  

Broader source: Energy.gov [DOE]

This is a request by CUMMINS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003403.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Advance Patent Waiver W(A)2012-027  

Broader source: Energy.gov [DOE]

This is a request by DAIMIER TRUCKS NORTH AMERICA for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0003348.

402

Advance Patent Waiver W(A)2011-022  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRICC CO for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003839.

403

Advance Patent Waiver W(A)2007-014  

Broader source: Energy.gov [DOE]

This is a request by DONALDSON COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42861

404

Advance Patent Waiver W(A)2011-023  

Broader source: Energy.gov [DOE]

This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000537.

405

Advance Patent Waiver W(A)2011-018  

Broader source: Energy.gov [DOE]

This is a request by ESOLAR for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003595.

406

Advance Patent Waiver W(A)2012-013  

Broader source: Energy.gov [DOE]

This is a request by BAKER HUGHES OILFIELD OPERATIONS, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005505.

407

Advance Patent Waiver W(A)2008-027  

Broader source: Energy.gov [DOE]

This is a request by ALCOA, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO180278

408

Advance Patent Waiver W(A)2009-004  

Broader source: Energy.gov [DOE]

This is a request by SCHLUMBERGER TECHNOLOGY CORP for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18182

409

Advance Patent Waiver W(A)2009-069  

Broader source: Energy.gov [DOE]

This is a request by ENVIRON INTERNATIOAL CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000069

410

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

High precision Th-230/Th- 232 and U-234/U-238 measurements using energy-filtered ICP magnetic sector multiple collector mass spectrometry.

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

411

Advance Patent Waiver W(A)2008-004  

Broader source: Energy.gov [DOE]

This is a request by HUNTSMAN ADVANCED MATERIALS AMERICANS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17012

412

[Interview]: Alexandre Shvartsburg, Pacific Northwest National Laboratory, Richland, WA, USA  

SciTech Connect (OSTI)

Q1. What are your main research activities in ion mobility mass spectrometry (past or present)? My early efforts focused on the structural characterization of atomic (carbon and semiconductor) clusters. After the production of bulk fullerenes, many hoped that other nanoclusters discovered in the gas phase could also coalesce into new materials. As these studies required accurate and robust mobility calculations for any ion geometry, I strived to build the needed theory and implement it in the Mobcal software widely employed today. Since 2004, I have been developing methods and novel applications of differential IMS (FAIMS) at PNNL. The principal achievement has been raising the resolving power by over tenfold (up to ~400 for multiply-charged peptides) using elevated fields, helium and hydrogen-rich buffers, and extended filtering times. This performance broadly allows previously unthinkable separations of very similar species, for example sequence inversions and post-translational modification localization isomers of peptides (including “middle-down” peptides such as histone tails), lipid regioisomers, and even isotopomers. Another major direction is investigating the dipole alignment of larger proteins, which creates an exceptionally strong FAIMS effect that is a potential tool for structural biology. Q2: What have been the most significant instrumentation or applications developments in the history of ion mobility - mass spectrometry? In 1995 when I started graduate research at Northwestern, only two groups worldwide worked with IMS/MS and “the literature” meant papers by Bowers (UCSB). Well-wishers counseled me to “learn something useful like HPLC, as IMS would never have real utility”. This booklet showcases the scale of change since. First, the practical IMS/ToF platforms for complex biological analyses demonstrated by Clemmer have turned IMS/MS from an esoteric physical chemistry technique into a powerful analytical tool. By commercializing the IMS/ToF technology in Synapt instruments, Waters has greatly increased its impact via expanded number and diversity of applications. Concurrently, Guevremont at Canadian NRC has perfected FAIMS coupled to MS, deployed it for real-world bio and environmental analyses, and widely distributed it in the Ionalytics Selectra system (subsequently installed on Thermo MS platforms). The latest breakthrough is ultra-FAIMS by Owlstone, where extreme fields allow numerous qualitatively new separations and operational modes that we just begin to explore. Q3: Where do you see ion mobility - mass spectrometry making the most impact in the next 5 years? Any predictions for where the field will go? Sciences dealing with perturbations in media (such as optics or acoustics) at some point shift from the linear to nonlinear paradigm, where propagation depends on the magnitude of perturbation or its driving force. While the linear part remains industrially important (e.g., eyewear and architectural glass for optics), frontline research moves to nonlinear phenomena. IMS is undergoing that transition now with the rise of FAIMS, which should continue as the fundamental understanding improves, new modalities and applications emerge, and more instrumentation is introduced by vendors. Modifying and augmenting FAIMS separations through vapor dopants that render ion mobilities less linear is becoming routine. I expect this area to advance, extending to more specific interactions and to complexation with solution additives. Another route to higher separation power is integrating FAIMS with conventional IMS; proliferation of both technologies would make such 2-D platforms common. Along with mass spectrometry and conventional IMS, FAIMS will address increasingly large macromolecules, including proteins and their complexes.

Shvartsburg, Alexandre A.

2012-12-01T23:59:59.000Z

413

Advance Patent Waiver W(A)2011-026  

Broader source: Energy.gov [DOE]

This is a request by US SYNTHETIC CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003633.

414

Advance Patent Waiver W(A)2008-026  

Broader source: Energy.gov [DOE]

This is a request by Siemens Power Generation for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-98FT40343

415

Advance Patent Waiver W(A)2007-022  

Broader source: Energy.gov [DOE]

This is a request by SIEMENS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41247

416

Advance Patent Waiver W(A)2005-054  

Broader source: Energy.gov [DOE]

This is a request by SIEMEN for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42444.

417

Advance Patent Waiver W(A)2012-028  

Broader source: Energy.gov [DOE]

This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0005666.

418

Advance Patent Waiver W(A)2011-032  

Broader source: Energy.gov [DOE]

This is a request by SIEMENS ENERGY, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0003714.

419

Advance Patent Waiver W(A)2005-049  

Broader source: Energy.gov [DOE]

This is a request by AMERICAN AIR LIQUIDE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41586.

420

Advance Patent Waiver W(A)2008-028  

Broader source: Energy.gov [DOE]

This is a request by INEOS USA LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-04GO14315

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


421

Advance Patent Waiver W(A)2010-026  

Broader source: Energy.gov [DOE]

This is a request by INEOS USA LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002883

422

Advance Patent Waiver W(A)2008-035  

Broader source: Energy.gov [DOE]

This is a request by POET RESEARCH, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO88033

423

Advance Patent Waiver W(A)2010-003  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRICC GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000784

424

Department of Biochemistry Seattle, WA 98195-7350  

E-Print Network [OSTI]

M CaCl2 500 mM Na2HPO4 14.3 M -mercaptoethanol 500 mM EDTA 500 mM NaH2PO4 BUFFERS Note: For all mM Imidazole 100 µL 1 M 2 mM CaCl2 200 µL 1 M 10 mM -mercaptoethanol 69.6 µL 14.3 M Split into two

Dunham, Maitreya

425

Advance Patent Waiver W(A)2010-062  

Broader source: Energy.gov [DOE]

This is a request by PARKER HANNIFIN CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000296

426

Advance Patent Waiver W(A)2005-025  

Broader source: Energy.gov [DOE]

This is a request by G.E. NUCLEAR ENERGY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14635

427

Advance Patent Waiver W(A)2005-026  

Broader source: Energy.gov [DOE]

This is a request by G.E. NUCLEAR ENERGY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14036.

428

Advance Patent Waiver W(A)2010-004  

Broader source: Energy.gov [DOE]

This is a request by GE-HITACHI NUCLEAR ENERGY AMERICAS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC52-09N29626

429

Arc magmatism at different crustal levels, North Cascades, WA  

E-Print Network [OSTI]

The mechanisms of magma ascent and emplacement inferred from study of intrusive complexes have long been the subject of intense debate. Current models favor incremental construction, but much of this work has been focused ...

Shea, Erin Kathleen McLaren

2014-01-01T23:59:59.000Z

430

Advance Patent Waiver W(A)2013-005  

Broader source: Energy.gov [DOE]

This is a request by STATOIL WIND US LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005988.

431

UNITED STATES Pesticides Peril Ocean Life, Scientists Wa rn  

E-Print Network [OSTI]

Studies Aid Pollution Control NOAA Supports Salt-Marsh Research in Georgia Satellites Meas ure Sea-Surface Tempera- ture in U,S.-Mexico Survey Chesapeake Bay Hard Crabs Will Be Scarce This Summer VIMS Studies and James H. Redman Disease in the Lives of Fish - The Role of Pollution Is Now Being Assessed, by Rich- ard

432

Camps program WaIVEr Form partICIpant  

E-Print Network [OSTI]

____________________________ First name_________________ Home phone _________________ Work phone _________________ Cell phone _________________ Work phone _________________ Cell phone_________________ ParticiPant medical information BC care card_________________ Emergency contact: Last name____________________________ First name_________________ Home phone

Kavanagh, Karen L.

433

Advance Patent Waiver W(A)2011-049  

Broader source: Energy.gov [DOE]

This is a request by DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003916.

434

NAME: Eelgrass Restoration in Puget Sound LOCATION: Puget Sound, WA  

E-Print Network [OSTI]

area within deltas NON-FEDERAL SPONSOR: Washington Department of Natural Resources PROJECT DESCRIPTION eelgrass restoration, with a focus on identifying sites that could be protected from future anthropogenic, eelgrass restoration in Puget Sound will raise pH levels and protect shellfish. STATUS: Planning and Design

US Army Corps of Engineers

435

W(A)93-013 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

personnel including pilot plant operator, laboratory technician, research scientist, process engineer, economic analyst and manager are all in place and prepared to do the...

436

Advance Patent Waiver W(A)2012-032  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005665.

437

Advance Patent Waiver W(A)2008-046  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18131

438

Advance Patent Waiver W(A)2007-005  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-06GO16054

439

Advance Patent Waiver W(A)2011-030  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003911.

440

Advance Patent Waiver W(A)2012-025  

Broader source: Energy.gov [DOE]

This is a request by EATON CORPORATION for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-OE0000592.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


441

WA S C2 0 01 Handbook of  

E-Print Network [OSTI]

, Republic of Palau, and the Commonwealth of the Northern Mariana Islands. WASC functions through a board

California at Santa Cruz, University of

442

Advance Patent Waiver W(A)2011-065  

Broader source: Energy.gov [DOE]

This is a request by OWENS CORNING for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005338.

443

Advance Patent Waiver W(A)2005-060  

Broader source: Energy.gov [DOE]

This is a request by SHELL SOLAR INDUSTRIES, LP for a DOE waiver of domestic and foreign patent rights under agreement DE-AC36-98GO10337.

444

Advance Patent Waiver W(A)2010-012  

Broader source: Energy.gov [DOE]

This is a request by CRAY, INC. for a DOE waiver of domestic and foreign patent rights under agreement B580786

445

Advance Patent Waiver W(A)2005-051  

Broader source: Energy.gov [DOE]

This is a request by SOUTHERN COMPANY SERVICE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC02-05CH11327.

446

Advance Patent Waiver W(A)2011-058  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRIC CO. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005143.

447

Advance Patent Waiver W(A)2008-031  

Broader source: Energy.gov [DOE]

This is a request by Novozymes North America for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43084

448

Advance Patent Waiver W(A)2008-042  

Broader source: Energy.gov [DOE]

This is a request by Novozymes Inc. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-0BG01BOBO

449

Advance Patent Waiver W(A)2012-002  

Broader source: Energy.gov [DOE]

This is a request by NOVOZYMES NORTH AMERICA, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007741.

450

Advance Patent Waiver W(A)2012-024  

Broader source: Energy.gov [DOE]

This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005493.

451

EIS-0244: Plutonium Finishing Plant Stabilization, Hanford Site, Richland, WA  

Broader source: Energy.gov [DOE]

This EIS evaluates the impacts on the human environment of: Stabilization of residual, plutonium-bearing materials at the PFP Facility to a form suitable for interim storage at the PFP Facility. Immobilization of residual plutonium-bearing materials at the PFP Facility. Removal of readily retrievable, plutonium-bearing materials left behind in process equipment, process areas, and air and liquid waste management systems as a result of historic uses.

452

Advance Patent Waiver W(A)2005-004  

Broader source: Energy.gov [DOE]

This is a request by ALSTO for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-03NT41986.

453

Advance Patent Waiver W(A)2011-048  

Broader source: Energy.gov [DOE]

This is a request by ADA-ES for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004343.

454

INSTABILITY C S Bretherton, University of Washington, Seattle, WA,  

E-Print Network [OSTI]

on small- amplitude (linear) two-dimensional inviscid hydro- static motions of a nonrotating atmosphere are neglected. Classically, a linear stability analysis of a small-amplitude wave is used to assess

Bretherton, Chris

455

Advance Patent Waiver W(A)2008-013  

Broader source: Energy.gov [DOE]

This is a request by SANYO ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17050

456

Advance Patent Waiver W(A)2005-033  

Broader source: Energy.gov [DOE]

This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-AC26-99NT40675.

457

EIS-0325: Schultz-Hanford Area Transmission Line Project, WA  

Broader source: Energy.gov [DOE]

BPA proposes to construct a new 500-kilovolt (kV) transmission line in central Washington. This project would increase transmission system capacity north of Hanford.

458

Advance Patent Waiver W(A)2013-019  

Broader source: Energy.gov [DOE]

This is a request by CREE, INC. for a DOE waiver of domestic and foreign patent rights under agreement NGB-3-23028-01.

459

Advance Patent Waiver W(A)2011-050  

Broader source: Energy.gov [DOE]

This is a request by EMERSON ELECTRIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004000.

460

Advance Patent Waiver W(A)2007-021  

Broader source: Energy.gov [DOE]

This is a request by SUN POWER CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-PS36-06GO96034

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Advance Patent Waiver W(A)2011-071  

Broader source: Energy.gov [DOE]

This is a request by THE DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005434.

462

Advance Patent Waiver W(A)2011-059  

Broader source: Energy.gov [DOE]

This is a request by CARLISLE CONSTRUCTION MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005435.

463

Advance Patent Waiver W(A)2008-020  

Broader source: Energy.gov [DOE]

This is a request by GE GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17045

464

Advance Patent Waiver W(A)2009-068  

Broader source: Energy.gov [DOE]

This is a request by United Solar Systems Corp. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17053

465

Advance Patent Waiver W(A)2011-035  

Broader source: Energy.gov [DOE]

This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004739.

466

EIS-0330: Wallula Power Project, Walla Walla County, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes DOE's proposal to construct, operate, maintain, and decontaminate and decommission two depleted uranium hexafluoride (DUF 6) conversion facilities, at Portsmouth, Ohio, and Paducah, Kentucky.

467

Advance Patent Waiver W(A)2012-019  

Broader source: Energy.gov [DOE]

This is a request by GE ENERGY for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007902.

468

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA  

Broader source: Energy.gov [DOE]

This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snohomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. The DOE NEPA process for this project has been canceled.

469

Advance Patent Waiver W(A)2008-021  

Broader source: Energy.gov [DOE]

This is a request by CARGILL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17055

470

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

M.J. , Baum, S.R. , Bjornstad, B.N. , R.E. , Clayton, R.E. ,M.J. , Valenta, M.M. , Bjornstad, B.N. , Clayton, R.E. ,R.J. , Schaef, H.T. , Bjornstad, B.N. , Williams, B.A. ,

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

471

Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet)  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelinesProved ReservesFeet)per Thousand Cubic Feet) DecadeCubic

472

Petra Nova - W.A. Parish Project | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG |September 15, 2010Energy6 Frontera STAT.Paul L.3 AgencyEnergyB.Petra Nova

473

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Bigfront.jpgcommunity200cell 9 Hanford TrafficSecurity

474

Advance Patent Waiver W(A)2012-005  

Broader source: Energy.gov [DOE]

This is a request by PHILIPS LUMILEDS LIGHTING, LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005099.

475

Advance Patent Waiver W(A)2013-018  

Broader source: Energy.gov [DOE]

This is a request by General Motors, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006082.

476

Advance Patent Waiver W(A)2012-029  

Broader source: Energy.gov [DOE]

This is a request by ALCOA COMMERICAL WINDOWS, LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0004012.

477

Advance Patent Waiver W(A)2012-020  

Broader source: Energy.gov [DOE]

This is a request by CLIPPER WINDPOWER LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005141.

478

Advance Patent Waiver W(A)2012-033  

Broader source: Energy.gov [DOE]

This is a request by GE-GLOBAL RESEARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-OE000593.

479

Advance Patent Waiver W(A)2010-055  

Broader source: Energy.gov [DOE]

This is a request by SUN POWER CORPORATIO for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002066

480

Advance Patent Waiver W(A)2012-009  

Broader source: Energy.gov [DOE]

This is a request by AE SOLAR for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005340.

Note: This page contains sample records for the topic "wa namibia sb" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Advance Patent Waiver W(A)2011-001  

Broader source: Energy.gov [DOE]

This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004908.

482

Advance Patent Waiver W(A)2013-022  

Broader source: Energy.gov [DOE]

This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005795.

483

Advance Patent Waiver W(A)2012-030  

Broader source: Energy.gov [DOE]

This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0000896.

484

Advance Patent Waiver W(A)2013-031  

Broader source: Energy.gov [DOE]

This is a request by WESTINGHOUSE ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-NE0000566.

485

Advance Patent Waiver W(A)2012-022  

Broader source: Energy.gov [DOE]

This is a request by FORD MOTOR COMPANY for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FOA-0000421.

486

Advance Patent Waiver W(A)2013-003  

Broader source: Energy.gov [DOE]

This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006108.

487

Advance Patent Waiver W(A)2010-053  

Broader source: Energy.gov [DOE]

This is a request by PPG INDUSTRIESS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003586

488

Advance Patent Waiver W(A)2011-057  

Broader source: Energy.gov [DOE]

This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003837.

489

Advance Patent Waiver W(A)2011-061  

Broader source: Energy.gov [DOE]

This is a request by ABENGOA SOLAR INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18037.

490

Advance Patent Waiver W(A)2011-063  

Broader source: Energy.gov [DOE]

This is a request by ABENGOA SOLAR INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18156.

491

Advance Patent Waiver W(A)2013-006  

Broader source: Energy.gov [DOE]

This is a request by PRINCIPLE POWER, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005987.

492

Advance Patent Waiver W(A)2009-036  

Broader source: Energy.gov [DOE]

This is a request by GENERAL ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT01579

493

Advance Patent Waiver W(A)2012-011  

Broader source: Energy.gov [DOE]

This is a request by RAYMOND TINNERMAN MANUFACTURING INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005438.

494

Advance Patent Waiver W(A)2013-027  

Broader source: Energy.gov [DOE]

This is a request by ELECTRICORE INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005968

495

Advance Patent Waiver W(A)2013-015  

Broader source: Energy.gov [DOE]

This is a request by Caterpillar Inc for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005980.

496

Advance Patent Waiver W(A)2013-007  

Broader source: Energy.gov [DOE]

This is a request by CA TCHLIGHT ENERGY, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005974.

497

Advance Patent Waiver W(A)2013-008  

Broader source: Energy.gov [DOE]

This is a request by GENERAL MOTORS LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005969.

498

Advance Patent Waiver W(A)2012-018  

Broader source: Energy.gov [DOE]

This is a request by GE ENERGY for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007859.

499

Advance Patent Waiver W(A)2012-031  

Broader source: Energy.gov [DOE]

This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-NT0005578.

500

Microsoft Word - WA Parish_MAP_Final.docx  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment SurfacesResource Program Preliminary Needs535:UFC5, 2010 First giant melter