Sample records for wa namibia sb

  1. Namibia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLu anMicrogreenMoonNASA/AmesNS Solar05Zip CategoryNamibia: Energy

  2. LAND REFORM IN NAMIBIA: AN ANALYSIS OF MEDIA COVERAGE

    E-Print Network [OSTI]

    Engelbrecht, Petrus J.

    2014-08-31T23:59:59.000Z

    in ensuring that land reform is successfully designed and executed. The media informs the public, sets the public and political agenda, holds the government accountable, and serves as a public sphere. This project analyses Namibia's three primary daily...

  3. WA_1995_001_US_AUTO_MATERIALS_PARTNERSHIPS_Waiver_of_Patent_...

    Office of Environmental Management (EM)

    WA1995001USAUTOMATERIALSPARTNERSHIPSWaiverofPatent.pdf WA1995001USAUTOMATERIALSPARTNERSHIPSWaiverofPatent.pdf WA1995001USAUTOMATERIALSPARTNERSHIPSWaiver...

  4. WA_1994010__SCHWITZER_U.S._INC_Waiver_of_Domestic_and_Foreig...

    Broader source: Energy.gov (indexed) [DOE]

    Publications WA1994007KYOCERAINDUSTRIALCERAMICSCORPORATIONWaivero.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA02028TRANECOWaiverofDomesti...

  5. WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...

    Broader source: Energy.gov (indexed) [DOE]

    WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

  6. WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...

    Broader source: Energy.gov (indexed) [DOE]

    5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

  7. WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...

    Broader source: Energy.gov (indexed) [DOE]

    6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

  8. WA_00_007_COMBUSTION_ENGINEERING_INC_Waiver_of_Domestic_and_...

    Broader source: Energy.gov (indexed) [DOE]

    07COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomestica...

  9. WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...

    Broader source: Energy.gov (indexed) [DOE]

    4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

  10. WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...

    Broader source: Energy.gov (indexed) [DOE]

    9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

  11. WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...

    Broader source: Energy.gov (indexed) [DOE]

    9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

  12. WA_96_016_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domestic_...

    Broader source: Energy.gov (indexed) [DOE]

    16AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

  13. WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...

    Broader source: Energy.gov (indexed) [DOE]

    14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

  14. WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...

    Broader source: Energy.gov (indexed) [DOE]

    8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

  15. Impact of HIV/AIDS on the Agricultural Sector in Northern Namibia

    E-Print Network [OSTI]

    Carter, Charles Russell

    2011-02-22T23:59:59.000Z

    In agrarian societies, HIV/AIDS extends far beyond the realm of healthcare into agricultural production and food security as well. Namibia is a developing country with a large portion of its population involved in agriculture; the average HIV...

  16. WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

  17. Advance Patent Waiver W(A)2005-006 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

  18. PO Box 2349 White Salmon, WA 98672

    E-Print Network [OSTI]

    PO Box 2349 White Salmon, WA 98672 509.493.4468 www.newbuildings.org COMMERCIAL ROOFTOP HVAC ENERGY from utility-sponsored field service measures on small (typically 3-10 tons) commercial rooftop unitary utility-funded RTU service programs. New Buildings Institute (NBI) staff has been managing the research

  19. WA_04_080_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Patent_R...

    Broader source: Energy.gov (indexed) [DOE]

    80HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPaten...

  20. WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...

    Broader source: Energy.gov (indexed) [DOE]

    NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

  1. WA_96_004_GE_CORPORATE_RESEARCH_and_DEVELOPMENT_Waiver_of_Dome...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    RATERESEARCHandDEVELOPMENTWaiverofDome.pdf More Documents & Publications WA1993012GENERALELECTRICCOMPANY--CORPORATERESEARCHAND.pdf WA1994013GENERALELECTRICCOMPANY...

  2. WA_03_021_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...

    Broader source: Energy.gov (indexed) [DOE]

    1DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRight...

  3. WA_04_082_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...

    Broader source: Energy.gov (indexed) [DOE]

    82DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRigh...

  4. WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    tentRightstoCARGILLDOWNL.pdf More Documents & Publications WA00022CARGILLDOWPOLYMERSLLCWaiverofDomesticandFo.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomestica...

  5. WA_1993_003_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...

    Broader source: Energy.gov (indexed) [DOE]

    3003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandFor...

  6. WA_1994_011_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...

    Broader source: Energy.gov (indexed) [DOE]

    1EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

  7. WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...

    Broader source: Energy.gov (indexed) [DOE]

    83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

  8. WA_04_025_AIR_LIQUIDE_AMERICA_Waiver_of_Patent_Rights_under_...

    Broader source: Energy.gov (indexed) [DOE]

    25AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsund...

  9. WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...

    Broader source: Energy.gov (indexed) [DOE]

    6QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandF...

  10. WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...

    Broader source: Energy.gov (indexed) [DOE]

    9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

  11. WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...

    Broader source: Energy.gov (indexed) [DOE]

    15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

  12. WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...

    Broader source: Energy.gov (indexed) [DOE]

    63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

  13. WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...

    Broader source: Energy.gov (indexed) [DOE]

    1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

  14. WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...

    Broader source: Energy.gov (indexed) [DOE]

    1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

  15. Knowing and deciding: participation in conservation and development initiatives in Namibia and Argentina 

    E-Print Network [OSTI]

    Newsham, Andrew

    2007-01-01T23:59:59.000Z

    ’ in Namibia and the Alto Bermejo Project in Argentina. The concept of sustainability – of living in a way that meets both current and future needs – has led, on a global scale, to a re-casting of the relationship between conservation and development as one...

  16. ,"Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Sumas, WA...

  17. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions IncBay County, Florida: Energy ResourcesBayWa Group Jump to:

  18. Advance Patent Waiver W(A)2010-028 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    W(A)2010-028 More Documents & Publications Advance Patent Waiver W(A)2009-028 Novel Materials for High Efficiency Direct Methanol Fuel Cells Advance Patent Waiver W(A)2008-019...

  19. Advance Patent Waiver W(A)2012-003 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Waiver W(A)2012-003 More Documents & Publications Advance Patent Waiver W(A)2013-019 Class Patent Waiver W(C)2012-003 WA02048EATONCORPORATIONWaviverofPatentRightsUnderA...

  20. waTer economics. environmenTand Policy

    E-Print Network [OSTI]

    Botea, Adi

    41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

  1. WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...

    Broader source: Energy.gov (indexed) [DOE]

    3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

  2. WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...

    Broader source: Energy.gov (indexed) [DOE]

    WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

  3. WA_04_074_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_I...

    Broader source: Energy.gov (indexed) [DOE]

    74EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeig...

  4. WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A...

    Broader source: Energy.gov (indexed) [DOE]

    48EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnde...

  5. WA_1994_017_GOLDEN_TECHNOLOGIES_COMPANY_Waiver_of_Domestic_a...

    Broader source: Energy.gov (indexed) [DOE]

    for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994014GOLDENTECHNOLOGIESCOMPA...

  6. WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_...

    Broader source: Energy.gov (indexed) [DOE]

    59EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUnder...

  7. WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...

    Broader source: Energy.gov (indexed) [DOE]

    2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

  8. WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...

    Broader source: Energy.gov (indexed) [DOE]

    01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

  9. WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...

    Broader source: Energy.gov (indexed) [DOE]

    04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

  10. WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...

    Broader source: Energy.gov (indexed) [DOE]

    2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

  11. WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...

    Broader source: Energy.gov (indexed) [DOE]

    24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

  12. WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...

    Broader source: Energy.gov (indexed) [DOE]

    18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

  13. WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...

    Broader source: Energy.gov (indexed) [DOE]

    1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

  14. Computer Science & Engineering Box 352350 Seattle, WA 98195-2350

    E-Print Network [OSTI]

    Borenstein, Elhanan

    Seattle, WA Permit #62Jeff Heer will join us from Stanford University, where he is a faculty member, a Presidential Early Career Award for Scientists and Engineers, the IJCAI Computers and Thought Award

  15. Earth Planets Space, 52, 329336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system

    E-Print Network [OSTI]

    Yamazaki, Toshitsugu

    Earth Planets Space, 52, 329­336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system with special reference to loss of magnetization after core recovery Toshitsugu Yamazaki1 , Peter A Magnetism, University of Minnesota, Minneapolis, MN 55455-0128, U.S.A. 3Hawaii Institute of Geophysics

  16. RAPID/Roadmap/6-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-baa <baWA-b <

  17. RAPID/Roadmap/6-WA-d | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-baa <baWA-b <d

  18. WA_00_013_GENECOR_INTERNATIONAL_Waiver_of_US_Competitiveness...

    Broader source: Energy.gov (indexed) [DOE]

    WaiverofUSCompetitiveness.pdf More Documents & Publications U.S. Biofuels Industry: Mind the Gap Advance Patent Waiver W(A)2008-045 WA01008NOVOZYMEBIOTECHWaiverofDomesti...

  19. Advance Patent Waiver W(A)2009-039 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Advance Patent Waiver W(A)2010-007 Advance Patent Waiver W(A)2012-034 Stabilized Lithium Metal Powder, Enabling Material and Revolutionary Technology for High Energy Li-ion...

  20. EIS-0397: Lyle Falls Fish Passage Project, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

  1. NAME: Eelgrass Restoration in Puget Sound LOCATION: Puget Sound, WA

    E-Print Network [OSTI]

    US Army Corps of Engineers

    NAME: Eelgrass Restoration in Puget Sound LOCATION: Puget Sound, WA ACRES: 3,700 acres of subtidal restoration efforts and to contribute to the Puget Sound Partnership's Action Agenda recovery goal of 20% more within the Puget Sound region of the Salish Sea: the Nisqually, Elwha, and Skokomish Rivers. These major

  2. carleton universityottaWa, canaDa international

    E-Print Network [OSTI]

    Dawson, Jeff W.

    carleton universityottaWa, canaDa international aDmissions 2014 #12;Carleton University provides high-quality education to students from Canada and around the world. We offer a wide range of programs and be a part of this extraordinary university! Wonderful country The United Nations consistently ranks Canada

  3. Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

    E-Print Network [OSTI]

    Krishna, Sanjay

    of Western Australia, Crawley, WA 6009, Australia J. B. Rodriguez, E. Plis, and S. Krishna Center for High, The University of Western Australia, Crawley, WA 6009, Australia Received 25 October 2007; accepted 7 January temperature studies in the range 50­300 K show that the carrier is associated with an activation energy of 0

  4. Electrochemical Insertion/extraction of Lithium in Multiwall Carbon Nanotube/Sb and SnSb?.? Nanocomposites

    E-Print Network [OSTI]

    Chen, Wei Xiang

    Multiwall carbon nanotubes (CNTs) were synthesized by catalytic chemical vapor deposition of acetylene and used as templates to prepare CNT-Sb and CNT-SnSb?.? nanocomposites via the chemical reduction of SnCl? and SbCl? ...

  5. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  6. WA_1993_022_NORTON_COMPANY_Waiver_of_Domestic_and_Foreign_Ri...

    Broader source: Energy.gov (indexed) [DOE]

    Golden Technologies Company, Inc. Request for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

  7. Climate Action Champions: Seattle, WA | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO OverviewAttachments4 Chairs Meeting - AprilEvents CleanSeattle, WA Climate Action

  8. RAPID/Roadmap/5-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ | Roadmap Jump to: navigation, searcheWA-a < RAPID‎ |

  9. RAPID/Roadmap/1-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas) Redirect pageNV-a <TX-aWA-a

  10. RAPID/Roadmap/19-WA-c | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |g <RAPID/Roadmap/19-WA-c

  11. RAPID/Roadmap/19-WA-e | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-e < RAPID‎ |

  12. RAPID/Roadmap/19-WA-f | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-e < RAPID‎

  13. RAPID/Roadmap/3-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-b <ai <bb <

  14. RAPID/Roadmap/3-WA-c | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-b <ai <bb

  15. RAPID/Roadmap/3-WA-d | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-b <ai <bbd

  16. RAPID/Roadmap/3-WA-e | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-b <ai <bbde

  17. RAPID/Roadmap/4-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-ba < RAPID‎a

  18. RAPID/Roadmap/6-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ |gWA-eID-baa <ba

  19. RAPID/Roadmap/7-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione <RAPID/Roadmap/7-FD-k <TX-c <WA-a

  20. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  1. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25T23:59:59.000Z

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing recommendations for DWPF along with some data related to Safety Class documentation at DWPF. Some significant observations regarding SB8 follow: Reduced washing in Tank 51 led to an increase in the wt.% soluble solids of the DWPF feed. If wt.% total solids for the SRAT and SME product weren’t adjusted upward to maintain insoluble solids levels similar to past sludge batches, then the rheological properties of the slurry went below the low end of the DWPF design bases for the SRAT and SME. Much higher levels of dissolved manganese were found in the SRAT and SME products than in recent sludge batches. Closed crucible melts were more reduced than expected. The working hypothesis is that the soluble Mn is less oxidizing than assumed in the REDOX calculations. A change in the coefficient for Mn in the REDOX equation was recommended in a separate report. The DWPF (Hsu) stoichiometric acid equation was examined in detail to better evaluate how to control acid in DWPF. The existing DWPF equation can likely be improved without changing the required sample analyses through a paper study using existing data. The recommended acid stoichiometry for initial SB8 SRAT batches is 115-120% stoichiometry until some processing experience is gained. The conservative range (based on feed properties) of stoichiometric factors derived in this study was from 110-147%, but SRNL recommends using only the lower half of this range, 110-126% even after initial batches provide processing experience. The stoichiometric range for sludge-only processing appears to be suitable for coupled operation based on results from the run in the middle of the range. Catalytic hydrogen was detectable (>0.005 vol%) in all SRAT and SME cycles. Hydrogen reached 30-35% of the SRAT and SME limits at the mid-point of the stoichiometry window (bounding noble metals and acid demand).

  2. Electrical Engineering SB Rev. Nov 2013 1/3

    E-Print Network [OSTI]

    Electrical Engineering SB Rev. Nov 2013 1/3 Plan of Study for the Electrical Engineering of Study Form is for a (Circle One): DECLARATION REVISION The S.B. Program in Electrical Engineering must ­ System Programming & Machine Organization 1.00 __________ #12;Electrical Engineering SB Rev. Nov 2013

  3. Electrical Engineering SB Rev. Nov 2014 1/3

    E-Print Network [OSTI]

    Electrical Engineering SB Rev. Nov 2014 1/3 Plan of Study for the Electrical Engineering of Study Form is for a (Circle One): DECLARATION REVISION The S.B. Program in Electrical Engineering must ­ System Programming & Machine Organization 1.00 __________ Sophomore Forum #12;Electrical Engineering SB

  4. Thermoelectric properties of ZnSb films grown by MOCVD

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-07-01T23:59:59.000Z

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  5. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

  6. Advance Patent Waiver W(A)2010-007 | Department of Energy

    Office of Environmental Management (EM)

    0-007 Advance Patent Waiver W(A)2010-007 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice...

  7. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  8. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  9. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25T23:59:59.000Z

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected during SME processing. Mercury behavior was consistent with that seen in previous SRAT runs. Mercury was stripped below the DWPF limit on 0.8 wt% for all runs. Rheology yield stress fell within or below the design basis of 1-5 Pa. The low acid Tank 40 run (106% acid stoichiometry) had the highest yield stress at 3.78 Pa.

  10. 16-12-12Web Archiv e (naf wa.org)-Hosted By Hurricane Electric -Resurrection Of Ex... 1/3naf wa.org/.../11052-resurrection-of -extinct-enzy mes-rev eals-ev olutionary -strategy -f or-the-inv enti...

    E-Print Network [OSTI]

    16-12-12Web Archiv e (naf wa.org)-Hosted By Hurricane Electric - Resurrection Of Ex... 1/3naf wa Archiv e (naf wa.org)-Hosted By Hurricane Electric - Resurrection Of Ex... naf wa.org/.../11052

  11. K2CsSb Cathode Development

    SciTech Connect (OSTI)

    Smedley,J.; Rao, T.; Wang, E.

    2008-10-01T23:59:59.000Z

    K{sub 2}CsSb is an attractive photocathode for high current applications. With a quantum efficiency of >4% at 532nm and >10% at 355nm, it is the only cathode to have demonstrated an average current of 35mA in an accelerator environment We describe ongoing cathode development work. for the energy recovery linac being constructed at BNL Several cathodes have been created on both copper and stainless steel substrates, and their spatial uniformity and spectral response have been characterized. Preliminary lifetime measurements have been performed at high average current densities (>1 mA/mm{sup 2}).

  12. SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations

    E-Print Network [OSTI]

    surveys; routine activities that do not affect the integrity of the well or the formation; the removal SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations Page 1 of 13 SB 4 WELL STIMULATION TREATMENT REGULATIONS TEXT OF PROPOSED REGULATIONS Added text is shown in underline

  13. ONION (Allium cepa, 47 cultivars) B.K. Schroeder, Washington State University (WSU), Pullman, Enterobacter bulb decay; Enterobacter cloacae WA 99164; T.D. Waters, WSU Franklin Co. Extension, Pasco WA

    E-Print Network [OSTI]

    Schroeder, Brenda K.

    , Enterobacter bulb decay; Enterobacter cloacae WA 99164; T.D. Waters, WSU Franklin Co. Extension, Pasco WA 99301 in storage in Washington State, 2008-2009. An onion bulb storage trial was completed to survey 47 storage to Enterobacter cloacae, causal agent of Enterobacter bulb decay. Seeds of each cultivar were planted near Pasco

  14. ONION (Allium cepa, 55 cultivars) B.K. Schroeder, Washington State University (WSU), Pullman, Enterobacter bulb decay; Enterobacter cloacae WA 99164; T. Waters, WSU Franklin Co. Extension, Pasco WA

    E-Print Network [OSTI]

    Schroeder, Brenda K.

    , Enterobacter bulb decay; Enterobacter cloacae WA 99164; T. Waters, WSU Franklin Co. Extension, Pasco WA 99301 for resistance to Enterobacter cloacae in storage, 2007-2008. An onion bulb storage trial was completed to survey for resistance to Enterobacter cloacae, causal agent of Enterobacter bulb decay. Seeds of each cultivar were

  15. Modeling transport of disposed dredged material from placement sites in Grays Harbor, WA

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Modeling transport of disposed dredged material from placement sites in Grays Harbor, WA E- to mid- term dredge material management strategies for the Federal Navigation Project at Grays Harbor dredging quantities. However, the most heavily used dredged material placement sites lie in proximity

  16. U.S. NUclear WaSte techNical revieW Board

    E-Print Network [OSTI]

    technical context as important decisions are made on managing the nation's spent nuclear fuel and high, packaging, and transporting spent nuclear fuel and high-level radioactive waste is presented. The technicalU.S. NUclear WaSte techNical revieW Board Report to The U.S. Congress and The Secretary

  17. An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg,

    E-Print Network [OSTI]

    An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg, D. Frigione+, M of an international pellet ablation database (IPADBASE) that has been assembled to enable studies of pellet ablation theories that are used to describe the physics of an ablating fuel pellet in a tokamak plasma. The database

  18. Electrical impedance tomography and Calderon's Department of Mathematics, University of Washington, Seattle, WA 98195, USA

    E-Print Network [OSTI]

    Uhlmann, Gunther

    Electrical impedance tomography and Calder´on's problem G Uhlmann Department of Mathematics, University of Washington, Seattle, WA 98195, USA E-mail: gunther@math.washington.edu Abstract. We survey mathematical developments in the inverse method of Electrical Impedance Tomography which consists

  19. Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide-area algorithms for

    E-Print Network [OSTI]

    - 1 - Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide (for N-1 contingency) or with the help of Special Protection Schemes (SPS) or Remedial Action Schemes of the relay actions that may have resulted in the angle stability phenomenon. The concept of a real

  20. General Disposal Authority for State Government Information The State Records Office of WA

    E-Print Network [OSTI]

    Tobar, Michael

    ) consolidates and amends the GDAs for Administrative Records, Human Resource Management Records, and Financial and Record Categories covered 4 of 170 Reference Activity / Record Category Page 16 CHEQUE MANAGEMENT 37 17General Disposal Authority for State Government Information The State Records Office of WA

  1. 7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970

    E-Print Network [OSTI]

    7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970 v 206.236.7200 f 206.236.3019 www Administration. The Joint Proposal is a comprehensive settlement that will bring to an end the long costs, when the responsibility for reaching agreements with IPPs, is dispersed directly to the load

  2. Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA

    E-Print Network [OSTI]

    Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA Bonneville is a regional agency that markets federal hydropower and augments its power supply with market, everyday citizens, to pay illegally inflated power costs. Because of this, Bonneville should have the legal

  3. Natural Data Mining Techniques J. N. Kok and W.A. Kosters

    E-Print Network [OSTI]

    Kosters, Walter

    , enrichment of data (for example using external data bases), coding, data mining and reporting. In data support for their operations. A usual problem in the #12;eld of data mining is that the combinationNatural Data Mining Techniques J. N. Kok and W.A. Kosters Leiden Institute of Advanced Computer

  4. Anisotropic giant magnetoresistance in NbSb?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kefeng [Brookhaven National Lab. (BNL), Upton, NY (United States); Graf, D. [Florida State Univ., Tallahassee, FL (United States); Li, Lijun [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Limin [Brookhaven National Lab. (BNL), Upton, NY (United States); Petrovic, C. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-05T23:59:59.000Z

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10?% in 2 K and 9 T field, and 4.3 × 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  5. Anisotropic giant magnetoresistance in NbSb?

    SciTech Connect (OSTI)

    Wang, Kefeng [Brookhaven National Lab. (BNL), Upton, NY (United States); Graf, D. [Florida State Univ., Tallahassee, FL (United States); Li, Lijun [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Limin [Brookhaven National Lab. (BNL), Upton, NY (United States); Petrovic, C. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-05T23:59:59.000Z

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10?% in 2 K and 9 T field, and 4.3 × 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  6. Anisotropic giant magnetoresistance in NbSb?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05T23:59:59.000Z

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10?% in 2 K and 9 T field, and 4.3 × 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomore »the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.« less

  7. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  8. Electronic-Structure of the Semimetals Bi and Sb

    E-Print Network [OSTI]

    LIU, Y.; Allen, Roland E.

    1995-01-01T23:59:59.000Z

    characteris- tic length, which makes Sb and Bi ideal for studying and employing quantum confinement effects. The three above semimetal-semiconductor superlattices are all grown in the [111] direction, along which the electron efFective masses of Bi and Sb... are relatively small and the quantum confinement length (scaling as m' ') consequently large. Also, there is only a small lattice mismatch in each case between the (111) planes of semimetal and semiconduc- tor. ' These three systems are, therefore...

  9. 4D-Polytopes and Their Dual Polytopes of the Coxeter Group $W(A_{4})$ Represented by Quaternions

    E-Print Network [OSTI]

    Mehmet Koca; Nazife Ozdes Koca; Mudhahir Al-Ajmi

    2011-02-06T23:59:59.000Z

    4-dimensional $A_{4}$ polytopes and their dual polytopes have been constructed as the orbits of the Coxeter-Weyl group $W(A_{4})$ where the group elements and the vertices of the polytopes are represented by quaternions. Projection of an arbitrary $W(A_{4})$ orbit into three dimensions is made using the subgroup $W(A_{3})$. A generalization of the Catalan solids for 3D polyhedra has been developed and dual polytopes of the uniform $A_{4}$ polytopes have been constructed.

  10. GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding

    SciTech Connect (OSTI)

    C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

    2002-12-18T23:59:59.000Z

    A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

  11. Lattice Thermal conductivity of the Cu3SbSe4-Cu3SbS4 Solid Solution

    SciTech Connect (OSTI)

    Skoug, Eric [Michigan State University, East Lansing; Cain, Jeffrey D. [Michigan State University, East Lansing; Morelli, Donald [Michigan State University, East Lansing; Kirkham, Melanie J [ORNL; Majsztrik, Paul W [ORNL; Lara-Curzio, Edgar [ORNL

    2011-01-01T23:59:59.000Z

    The compositional dependence of the crystal structure and lattice thermal conductivity in the Cu3SbSe4-Cu3SbS4 system has been studied. The lattice parameters of the Cu3SbSe4-xSx compounds decrease linearly with x, and the tetragonal structure (space group no. 121) of the end compounds is maintained at all compositions. The thermal conductivity is much lower than that predicted by a simple rule of mixtures, which is typical for a solid solution. The Debye model produces a very reasonable fit to the experimental lattice thermal conductivity data when phonon scattering due to atomic mass and size differences between Se and S is taken into account. Compounds in this series are likely to improve upon the thermoelectric performance of Cu3SbSe4, which has shown ZT=0.72 when optimized.

  12. The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb

    SciTech Connect (OSTI)

    Carta, V.; Ciccioli, A., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it; Gigli, G., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it [Dipartimento di Chimica, Sapienza Universitŕ di Roma, p.le A. Moro 5, 00185 Roma (Italy)

    2014-02-14T23:59:59.000Z

    The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349–1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D{sub 0}{sup ?}, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D{sub 0}{sup ?}, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

  13. No. 16 ISSN 10278389 March 2012 The Southern African Large Telescope (Courtesy: S.B. Potter)

    E-Print Network [OSTI]

    Jarrett, Thomas H.

    @aol.com P.M. Okouma Gabon okouma@hotmail.com A.I. Ibrahim Egypt alaa@milkyway.gsfc.nasa.gov L. Kebede-East and Africa. In partic- ular, the completion of HESS (the High Energy Stereoscopic System, in Namibia-class observational capability from ultra-high energy gamma-rays, through optical/near-IR to radio wave- lengths

  14. Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments

    E-Print Network [OSTI]

    A. Ster; T. Csorgo; B. Lorstad

    1998-09-28T23:59:59.000Z

    Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

  15. Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix

    SciTech Connect (OSTI)

    Chen Dongliang; Fan Jiangwei; Wei Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li Chaosheng; Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031 (China)

    2005-08-15T23:59:59.000Z

    The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

  16. Effect of Sb on the Properties of GaInP Top Cells (Presentation)

    SciTech Connect (OSTI)

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01T23:59:59.000Z

    The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

  17. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09T23:59:59.000Z

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  18. Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller

    E-Print Network [OSTI]

    McCluskey, Matthew

    Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

  19. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

    E-Print Network [OSTI]

    Krishna, Sanjay

    InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energyAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D February 2012) InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been

  20. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect (OSTI)

    Hui, Si [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Nielsen, Michele D. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Homer, Mark R.; Medlin, Douglas L. [Sandia National Laboratories, Livermore, California 94550 (United States); Tobola, Janusz [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, 30-059 Krakow (Poland); Salvador, James R. [Chemical and Materials Systems Laboratory, GM R and D Center, Warren, Michigan 48090 (United States); Heremans, Joseph P. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States); Pipe, Kevin P. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-03-14T23:59:59.000Z

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  1. Thermal Processing Effects on Microstructure and Composition of Cu3SbSe3

    SciTech Connect (OSTI)

    Majsztrik, Paul W [ORNL; Kirkham, Melanie J [ORNL; Garcia Negron, Valerie [Polytechnic University of Puerto Rico (PUPR); Lara-Curzio, Edgar [ORNL; Skoug, Eric [Michigan State University, East Lansing; Morelli, Donald [Michigan State University, East Lansing

    2013-01-01T23:59:59.000Z

    We report on the effects of thermal processing on the microstructure and composition of a system with overall stoichiometry of 3Cu:1Sb:3Se with the aim of producing single-phase Cu3SbSe3. It was found that slowly cooling from the melt produced a multiphase material consisting of Cu2Se and CuSbSe2, but devoid of Cu3SbSe3. Cooling rapidly from the melt resulted in three-phase microstructures consisting of Cu2Se, CuSbSe2, and Cu3SbSe3. Subsequent annealing of the three-phase material between 325 C and 400 C shifted composition towards nearly pure Cu3SbSe3, the target compound of this work. The kinetics of the transformation into Cu3SbSe3 is successfully described using a modified Avrami model, which suggests that diffusion is the rate-controlling step. Values of Young s modulus and hardness, obtained by nanoindentation, are reported for Cu2Se, CuSbSe2, and Cu3SbSe3.

  2. GaSb substrates with extended IR wavelength for advanced space based applications

    SciTech Connect (OSTI)

    Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

    2009-05-01T23:59:59.000Z

    GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

  3. Structural transition and amorphization in compressed ? - Sb 2 O 3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhao, Zhao; Zeng, Qiaoshi; Zhang, Haijun; Wang, Shibing; Hirai, Shigeto; Zeng, Zhidan; Mao, Wendy L.

    2015-05-01T23:59:59.000Z

    Sb?O?-based materials are of broad interest in materials science and industry. High-pressure study using diamond anvil cells shows promise in obtaining new crystal and electronic structures different from their pristine states. Here, we conducted in situ angle dispersive synchrotron x-ray-diffraction and Raman spectroscopy experiments on ?-Sb?O? up to 50 GPa with neon as the pressure transmitting medium. A first-order structural transition was observed in between 15 and 20 GPa, where the cubic phase I gradually transformed into a layered tetragonal phase II through structural distortion and symmetry breaking. To explain the dramatic changes in sample color and transparency, we performed first-principles calculations to track the evolution of its density of states and electronic structure under pressure. At higher pressure, a sluggish amorphization was observed. Our results highlight the structural connections among the sesquioxides, where the lone electron pair plays an important role in determining the local structures.

  4. To appear in: Proc. CVPR'94, Seattle, WA Global Surface Reconstruction by Purposive Control of Observer Motion

    E-Print Network [OSTI]

    Jepson, Allan D.

    To appear in: Proc. CVPR'94, Seattle, WA Global Surface Reconstruction by Purposive Control Department University of Wisconsin Madison, Wisconsin 53706 Abstract What real-time, qualitative viewpoint-control markings, building a global model of an arbitrary object, or recognizing an object? In this paper we

  5. Measurements of Turbulence at Two Tidal Energy Sites in Puget Sound, WA

    SciTech Connect (OSTI)

    Thomson, Jim; Polagye, Brian; Durgesh, Vibhav; Richmond, Marshall C.

    2012-06-05T23:59:59.000Z

    Field measurements of turbulence are pre- sented from two sites in Puget Sound, WA (USA) that are proposed for electrical power generation using tidal current turbines. Rapidly sampled data from multiple acoustic Doppler instruments are analyzed to obtain statistical mea- sures of fluctuations in both the magnitude and direction of the tidal currents. The resulting turbulence intensities (i.e., the turbulent velocity fluctuations normalized by the harmonic tidal currents) are typically 10% at the hub- heights (i.e., the relevant depth bin) of the proposed turbines. Length and time scales of the turbulence are also analyzed. Large-scale, anisotropic eddies dominate the energy spectra, which may be the result of proximity to headlands at each site. At small scales, an isotropic turbulent cascade is observed and used to estimate the dissipation rate of turbulent kinetic energy. Data quality and sampling parameters are discussed, with an emphasis on the removal of Doppler noise from turbulence statistics.

  6. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H. [Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China); Loubychev, Dmitri; Liu, Amy; Fastenau, Joel [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Lindemuth, Jeff [Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)

    2014-08-04T23:59:59.000Z

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9?×?10{sup 12}?cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  7. Photoemission study of the electronic structure and charge density waves of Na?Ti?Sb?O

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tan, S. Y.; Jiang, J.; Ye, Z. R.; Niu, X. H.; Song, Y.; Zhang, C. L.; Dai, P. C.; Xie, B. P.; Lai, X. C.; Feng, D. L.

    2015-04-30T23:59:59.000Z

    The electronic structure of Na?Ti?Sb?O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na?Ti?Sb?O in the non-magnetic state, which indicates that there is no magnetic order in Na?Ti?Sb?O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na?Ti?Sb?O. Photon energy dependent ARPES results suggest that the electronic structure of Na?Ti?Sb?O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV atmore »7 K, indicating that Na?Ti?Sb?O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)« less

  8. New Antimony Lanthanide Disulfide Dibromides LnSbS

    SciTech Connect (OSTI)

    Gout, D.; Jobic, S.; Evain, M.; Brec, R.

    2001-05-01T23:59:59.000Z

    CeSbS{sub 2}Br{sub 2} (I), Ce{sub 1/2}La{sub 1/2}SbS{sub 2}Br{sub 2} (II), and LaSbS{sub 2}Br{sub 2} (III) have been synthesized at 700 C from a mixture of LnBr{sub 3}, Ln{sub 2}S{sub 3}, Sb, and S and characterized by single-crystal X-ray diffraction. The three phases are isostructural (space group P2{sub 1}/c, Z=4) and crystallize in a novel, dense, bidimensional structure with cell parameters a=8.709(3) {angstrom}, b=9.187(2) {angstrom}, c=17.397(5) {angstrom} {beta}=104.26(3) for I, a=8.739(7) {angstrom}, b=9.219(7) {angstrom}, c=17.41(2) {angstrom}, =104.3(1) for II, and a=8.785(1) {angstrom}, b=9.236(2) {angstrom}, c=17.372(3) {angstrom}, {beta}=104.09(2) for III. In these compounds, [Ln S{sub 5}Br{sub 4}] and [Ln S{sub 3}Br{sub 6}] (Ln=Ce, La) distorted tricapped trigonal prisms define infinite {sub {infinity}}{sup 2}[LnS{sub 2}Br{sub 2}] layers counterbalanced and capped by antimony cations. In good accordance with the structural features, the charge balance in these materials is to be written Ln{sup III}Sb{sup III}S{sup -II}{sub 2}Br{sup -I}{sub 2}. These compounds exhibit a yellow hue with a measured absorption threshold of 2.42(1), 2.55(1), and 2.72(1) eV for I, II, and III, respectively. In the two cerium containing bromothioantimonates I and II, the origin of the color is assigned to a Ce-4f{yields}Ce-5d electronic transition, which shifts to higher energy from I to II due either to a matrix effect (increase of the mean Ln-S distances under the substitution of Ce for La) or to an atomic ordering between Ce and La cations on the Ln(1) and Ln(2) crystallographic sites. In contrast, the electronic transition at play in III involves a charge transfer from the bromine and sulfur ions to the antimony ions, the latter contributing substantially to the lowermost levels of the conduction band.

  9. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    E-Print Network [OSTI]

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-01-01T23:59:59.000Z

    The Electrochemical Society (Batteries and Energy ConversionDeposition for Lithium Batteries Seung-Wan Song, a, * Ronaldrechargeable lithium batteries. Introduction Sb-containing

  10. Page 1 MATH 262 Quiz 1 Name.- Sb 0“ PID: Sokve the problem ...

    E-Print Network [OSTI]

    MATH 262 Quiz 1. Name.- Sb 0“ PID: Sokve the problem systematicaěly and neatly und show aěl your work. (4pts) l. Find the equation of the orthogonal ...

  11. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    E-Print Network [OSTI]

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-01-01T23:59:59.000Z

    Laser Deposition for Lithium Batteries Seung-Wan Song, a, *in rechargeable lithium batteries. Introduction Sb-in rechargeable lithium batteries. Two advantages of

  12. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  13. Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2011-10-01T23:59:59.000Z

    High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

  14. Key results from SB8 simulant flowsheet studies

    SciTech Connect (OSTI)

    Koopman, D. C.

    2013-04-26T23:59:59.000Z

    Key technically reviewed results are presented here in support of the Defense Waste Processing Facility (DWPF) acceptance of Sludge Batch 8 (SB8). This report summarizes results from simulant flowsheet studies of the DWPF Chemical Process Cell (CPC). Results include: Hydrogen generation rate for the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) cycles of the CPC on a 6,000 gallon basis; Volume percent of nitrous oxide, N2O, produced during the SRAT cycle; Ammonium ion concentrations recovered from the SRAT and SME off-gas; and, Dried weight percent solids (insoluble, soluble, and total) measurements and density.

  15. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06T23:59:59.000Z

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method.

  16. SB Electronics Breaks Ground on New Factory | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin ofEnergy at Waste-to-Energy usingofRetrofittingFundA lSelectBuildingof328Report toSB

  17. EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX

    Broader source: Energy.gov [DOE]

    This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

  18. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    DOE Patents [OSTI]

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11T23:59:59.000Z

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  19. Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues

    E-Print Network [OSTI]

    Short, Daniel

    Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues: XAS XANES EXAFS Antimony Particulate matter Brake linings a b s t r a c t Insights into the speciation of Sb in samples of brake linings, brake pad wear residues, road dust, and atmospheric particulate

  20. Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3

    E-Print Network [OSTI]

    Shen, Guoyin

    Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3 P. P. Kong1 , F. Sun1,3 , L. Y induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition

  1. ccsd00001219 Superconducting phase diagram of the lled skuterrudite PrOs 4 Sb 12

    E-Print Network [OSTI]

    ccsd­00001219 (version 2) : 16 Mar 2004 Superconducting phase diagram of the #12;lled skuterrudite a precise magnetic #12;eld-temperature superconducting phase diagram of PrOs4Sb12 down to 350 mK. We discuss the superconducting phase diagram of PrOs4Sb12 and its possible relation with an unconventional superconducting order

  2. The quantum efficiency of InGaAsSb thermophotovoltaic diodes

    SciTech Connect (OSTI)

    Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States)

    1997-10-01T23:59:59.000Z

    Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.

  3. Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system

    E-Print Network [OSTI]

    Yener, Aylin

    of a high quality dielectric/substrate interface. Native oxides of III­V com- pounds lead to the formation Sb is formed at the oxide/GaSb interface, which leads to a high leakage current.8 To overcome treatment. In contrast, NH4 2S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga

  4. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    NONE

    2009-01-15T23:59:59.000Z

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  5. Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Nontapot, K.; Kini, R. N.; Gifford, A.; Merritt, T. R.; Khodaparast, G. A.; Wojtowicz, T.; Liu, X.; Furdyna, J. K. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2007-04-02T23:59:59.000Z

    The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.

  6. Nano-porosity in GaSb induced by swift heavy ion irradiation

    SciTech Connect (OSTI)

    Kluth, P., E-mail: patrick.kluth@anu.edu.au; Schnohr, C. S.; Giulian, R.; Araujo, L. L.; Lei, W.; Rodriguez, M. D.; Afra, B.; Bierschenk, T.; Ridgway, M. C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Sullivan, J.; Weed, R. [ARC Centre for Antimatter-Matter Studies, AMPL, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Li, W.; Ewing, R. C. [Department of Earth and Environmental Sciences, University of Michigan, Ann Arbor, Michigan 48109-1005 (United States)

    2014-01-13T23:59:59.000Z

    Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.

  7. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01T23:59:59.000Z

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the same acid stoichiometric factor. The slow acid addition in MCU seemed to alter the reactions that consumed the small excess acid present such that hydrogen generation was promoted relative to sludge-only processing. The coupled test reached higher wt.% total solids, and this likely contributed to the SME cycle hydrogen limit being exceeded at 110% KMA. It is clear from the trends in the SME processing GC data, however, that the frit slurry formic acid contributed to driving the hydrogen generation rate above the SME cycle limit. Hydrogen generation rates after the second frit addition generally exceeded those after the first frit addition. SRAT formate loss increased with increasing acid stoichiometry (15% to 35%). A substantial nitrate gain which was observed to have occurred after acid addition (and nitrite destruction) was reversed to a net nitrate loss in runs with higher acid stoichiometry (nitrate in SRAT product less than sum of sludge nitrate and added nitric acid). Increased ammonium ion formation was also indicated in the runs with nitrate loss. Oxalate loss on the order 20% was indicated in three of the four acid stoichiometry runs and in the coupled flowsheet run. The minimum acid stoichiometry run had no indicated loss. The losses were of the same order as the official analytical uncertainty of the oxalate concentration measurement, but were not randomly distributed about zero loss, so some actual loss was likely occurring. Based on the entire set of SB7b test data, it is recommended that DWPF avoid concentrating additional sludge solids in single SRAT batches to limit the concentrations of noble metals to SB7a processing levels (on a grams noble metal per SRAT batch basis). It is also recommended that DWPF drop the formic acid addition that accompanies the process frit 418 additions, since SME cycle data showed considerable catalytic activity for hydrogen generation from this additional acid (about 5% increase in stoichiometry occurred from the frit formic acid). Frit 418 also does not appear to need formic acid addition to prevent gel formation in

  8. Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA

    E-Print Network [OSTI]

    Leon, J Diaz; Knecht, A; Miller, M L; Robertson, R G H; Schubert, A G

    2011-01-01T23:59:59.000Z

    We report results of air monitoring started due to the recent natural catastrophe on March 11, 2011 in Japan and the severe ensuing damage to the Fukushima nuclear reactor complex. On March 17-18, 2011 we detected the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. The highest detected activity to date is <~32 mBq/m^3 of 131-I.

  9. Time-course analysis of the Shewanella amazonensis SB2B proteome...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the membrane fatty acid composition (due to induction of branched chain amino acid degradation pathways); however, we show this is not the case for SB2B. Although proteins and...

  10. Planning for sustainable communities: Regional incentives and local policy under SB375

    E-Print Network [OSTI]

    California at Davis, University of

    Planning for sustainable communities: Regional incentives and local policy under SB375 Gian Institute Policy for Energy, Environment and the Economy University of California, Davis March 19, 2014 impacts access density alternatives sustainability #12;Sustainable Communities Strategy (SCS) San Diego

  11. Controlling SEI Formation on SnSb-Porous Carbon Nanofibers for...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Improved Na Ion Storage. Abstract: Porous carbon nanofiber (CNF)-supported tin-antimony (SnSb) alloys is synthesized and applied as sodium ion battery anode. The...

  12. Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

    SciTech Connect (OSTI)

    Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

    2014-04-07T23:59:59.000Z

    The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

  13. GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

    SciTech Connect (OSTI)

    Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

    1995-01-01T23:59:59.000Z

    We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

  14. Ab-Initio Determination of Novel Crystal Structures of the Thermoelectric Material MgAgSb

    SciTech Connect (OSTI)

    Kirkham, Melanie J [ORNL; Moreira Dos Santos, Antonio F [ORNL; Rawn, Claudia J [ORNL; Lara-Curzio, Edgar [ORNL; Sharp, Jeff W. [Marlow Industries, Inc; Thompson, Alan [Marlow Industries, Inc

    2012-01-01T23:59:59.000Z

    Materials with the half-Heusler structure possess interesting electrical and magnetic properties, including potential for thermoelectric applications. MgAgSb is compositionally and structurally related to many half-Heusler materials, but has not been extensively studied. This work presents the high-temperature X-ray diffraction analysis of MgAgSb between 27 and 420 C, complemented with thermoelectric property measurements. MgAgSb is found to exist in three different structures in this temperature region, taking the half-Heusler structure at high temperatures, a Cu2Sb-related structure at intermediate temperatures, and a previously unreported tetragonal structure at room temperature. All three structures are related by a distorted Mg-Sb rocksalt-type sublattice, differing primarily in the Ag location among the available tetrahedral sites. Transition temperatures between the three phases correlate well with discontinuities in the Seebeck coefficient and electrical conductivity; the best performance occurs with the novel room temperature phase. For application of MgAgSb as a thermoelectric material, it may be desirable to develop methods to stabilize the room temperature phase at higher temperatures.

  15. Branching of the W(H4) Polytopes and Their Dual Polytopes under the Coxeter Groups W(A4) and W(H3) Represented by Quaternions

    E-Print Network [OSTI]

    Mehmet Koca; Nazife Ozdes Koca; Mudhahir Al-Ajmi

    2011-06-15T23:59:59.000Z

    4-dimensional H4 polytopes and their dual polytopes have been constructed as the orbits of the Coxeter-Weyl group W(H4) where the group elements and the vertices of the polytopes are represented by quaternions. Projection of an arbitrary W(H4) orbit into three dimensions is made preserving the icosahedral subgroup W(H3) and the tetrahedral subgroup W(A3), the latter follows a branching under the Coxeter group W(A4) . The dual polytopes of the semi-regular and quasi-regular H4 polytopes have been constructed.

  16. Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys

    E-Print Network [OSTI]

    E*PCOS2009 Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te75.0Te17.7 (AIST). These represent two families used widely as phase change materials: pseudobinary and more flexible than those of Ag. Key words: Phase change materials, density functional calculations

  17. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  18. Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1998-06-01T23:59:59.000Z

    Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

  19. OMVPE growth and characterization of GaInAsSb for thermophotovoltaics

    SciTech Connect (OSTI)

    Wang, C.A.; Charache, G.W.

    1998-06-01T23:59:59.000Z

    Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

  20. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  1. GaSb based ternary and quaternary diffused junction devices for TPV applications

    SciTech Connect (OSTI)

    Sundaram, V.S.; Saban, S.B.; Morgan, M.D.; Horne, W.E.; Evans, B.D.; Ketterl, J.R. [EDTEK Inc. 7082 S. 220th Street Kent, Washington 98032 (United States); Morosini, M.B.; Patel, N.B. [Instituto de Fisica, UNICAMP, Campinas, Brasil (Brazil); Field, H. [NREL, Golden, Colorado (United States)

    1997-03-01T23:59:59.000Z

    In this work we report the characteristics of ternary, GaInSb (Eg=0.70eV) and quarternary, GaInAsSb (Eg=0.5eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8A/cm{sup 2}, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8A/cm{sup 2}, respectively. The peak internal quantum efficiency for the ternary is over 90{percent} and that of the quarternary is above 75{percent}. Process optimization should improve the performance charcateristics of the quarternary. {copyright} {ital 1997 American Institute of Physics.}

  2. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, O.B.; Lear, K.L.

    1998-03-10T23:59:59.000Z

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  3. International Conference on Advanced Robotics ICAR 2005 July 2005, Seattle WA Abstract--Integrating human and robot into a single system

    E-Print Network [OSTI]

    Rosen, Jacob

    The 12th International Conference on Advanced Robotics ­ ICAR 2005 ­ July 2005, Seattle WA Abstract to the fine manipulation joints (the wrist). An inverted phenomenon was observed during fine manipulation) and functions as a human- amplifier. Its joints and links correspond to those of the human body, and its

  4. (GeTe){sub n}SbInTe{sub 3} (n?3)—Element distribution and thermal behavior

    SciTech Connect (OSTI)

    Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Schröder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany)

    2013-12-15T23:59:59.000Z

    Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) Ĺ, c=41.0348(10) Ĺ) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) Ĺ, c=17.2076(4) Ĺ) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) Ĺ, c=62.1620(11) Ĺ). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 °C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 °C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: • The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. • The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. • The cation concentration in the crystal structure is strongly modulated. • The Sb substitution by In has a significant impact on phase transitions. • Results may be relevant for thermoelectrics and thin-film phase-change materials.

  5. Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA

    E-Print Network [OSTI]

    J. Diaz Leon; D. A. Jaffe; J. Kaspar; A. Knecht; M. L. Miller; R. G. H. Robertson; A. G. Schubert

    2011-08-23T23:59:59.000Z

    We report results of air monitoring started due to the recent natural catastrophe on 11 March 2011 in Japan and the severe ensuing damage to the Fukushima Dai-ichi nuclear reactor complex. On 17-18 March 2011, we registered the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. We measured the evolution of the activities over a period of 23 days at the end of which the activities had mostly fallen below our detection limit. The highest detected activity amounted to 4.4 +/- 1.3 mBq/m^3 of 131-I on 19-20 March.

  6. JOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF LIQUID Ge-Sb AND Pb-Sb ALLOYS

    E-Print Network [OSTI]

    Boyer, Edmond

    RESISTIVITY AND THERMOELECTRIC POWER OF LIQUID Ge-Sb AND Pb-Sb ALLOYS A. Bath, J.G. Gasser, J.L. Bretonnet, R Metz, France. Abstract.- The resistivity p and the thermoelectric power S have been measured experimental data on resistivi- ty and thermoelectric power (T.E.P.) for these two systems, and to discuss them

  7. Electron Scattering in InSb Quantum Wells due to Micro-twin Defects

    SciTech Connect (OSTI)

    Mishima, T. D.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

    2011-12-26T23:59:59.000Z

    The transport electron scattering due to micro-twin (MT) defects in InSb quantum wells (QWs) has been investigated at room temperature (RT). A linear-regression-based scattering analysis showed that Matthiessen's rule is applicable to the RT electron mobility in 20-nm-thick InSb QWs that contain MTs (whose density is 5.6x10{sup 2}-1.2x10{sup 4} /cm) and threading dislocations (8.7x10{sup 8}-3.2x10{sup 9} /cm{sup 2}) as dominant structural defects. For such an InSb QW whose local electron mobility in its non-MT regions is 2.8x10{sup 4}-4.5x10{sup 4} cm{sup 2}/(Vs), the MT-originated energy barrier against the electron transport is deduced to be 0.081-0.093 eV at RT.

  8. Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    .1063/1.3657139 Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials J. Chem. Phys on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material Shinya Hosokawa,1,2,a) Wolf change material Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Höhle, Daniel Szubrin, Nathalie Boudet

  9. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30T23:59:59.000Z

    The Department of Energy – Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft® Excel® spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel® spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  10. Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses

    E-Print Network [OSTI]

    Burzo, Andrea Mihaela

    2001-01-01T23:59:59.000Z

    of the behavior of InSb following application of ultra-short and ultra-intense laser pulses. Motivated directly by these experiments, we have performed simulations of the electron-ion dynamics of InSb subjected to femtosecond-scale laser pulses. These simulations...

  11. Development of Bi-Sb-Te ternary alloy with compositionally graded structure

    SciTech Connect (OSTI)

    Yamamoto, A.; Ohta, T.

    1997-07-01T23:59:59.000Z

    Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

  12. Prospects of nanostructures Bi{sub 1-x}Sb{sub x} for thermoelectricity

    SciTech Connect (OSTI)

    Nikolaeva, Albina A., E-mail: A.Nikolaeva@nano.asm.md [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Konopko, Leonid A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of) [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Huber, Tito E. [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States)] [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States); Bodiul, Pavel P.; Popov, Ivan A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)] [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)

    2012-09-15T23:59:59.000Z

    It has been predicted that surface states of topological insulators have large a thermopower and also ultrahigh mobilities. The authors report results of a magneto-thermoelectric investigation of single crystal Bi{sub 1-x}Sb{sub x} nanowires in a glass cover with diameters ranging from 90 nm to 5 {mu}m. The wide-ranging antimony concentration enabled us to study the effect of nanowire dimensionality in the semimetal, semi-conductor and gapless regimes. Quantum size effects in Bi-2 at%Sb nanowires, which are shown in temperature dependences of resistance R(T) and thermopower {alpha}(T) for the diameters significantly higher than the critical diameter for pure Bi-wires, are observed. The thermopower in weak magnetic fields, reaches values +400 {mu}V/K at T=20-40 K. Power factor {alpha}{sup 2}{sigma} depending on diameter of wires, structure, temperature and magnetic field is calculated. In connection with topological insulators, we will discuss the surface effect in the thermoelectric properties that we observe. - Graphical abstract: Temperature dependences of resistance R{sub T}/R{sub 300}(T) (a) for Bi-2 at%Sb wires various diameters d: 1-d=300 nm, 2-d=400 nm, 3-d=600 nm, 4-d=1600 nm. Inset (a) SEM cross sectional image of the 650 nm Bi-2 at%Sb wire (clear) in glass envelope (gray). The magnetic field dependences thermopower (H Double-Vertical-Line {Delta}T) (b) Bi-2 at%Sb wires, with different diameters: (1). d=300 nm, (2). d=400 nm, (3). d=600 nm, T=26 K. Highlights: Black-Right-Pointing-Pointer SMSC transition in semimetal Bi-Sb wires due to the quantum size effect is observed. Black-Right-Pointing-Pointer In Bi-6 at%Sb wires alloys has been realized the gapless (GL) state. Black-Right-Pointing-Pointer In the area GS state abnormal growth thermopower in magnetic fields is found out. Black-Right-Pointing-Pointer Semiconductor Bi{sub 1-x} Sb{sub x} nanowires manifest properties of the topological insulators.

  13. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01T23:59:59.000Z

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  14. Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV

    E-Print Network [OSTI]

    Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV modules 1 must be listed on the SB1 for adding PV modules to the SB1 list is as follows: 1 . Data submitted to the Energy Commission

  15. Frit Development Efforts for Sludge Batch 4 (SB4): Operating Window Assessments fo Scenarios Leading Up to the Selected Preparation Plan for SB4

    SciTech Connect (OSTI)

    Peeler, D

    2006-03-21T23:59:59.000Z

    The objective of this report is to document technical information that has been provided to Defense Waste Processing Facility (DWPF) and Closure Business Unit (CBU) personnel as part of the frit development support for Sludge Batch 4 (SB4). The information presented in this report includes projected operating windows (expressed in terms of waste loading) for various sludge blending and/or washing options coupled with candidate frits of interest. Although the Nominal Stage assessment serves as the primary tool for these evaluations, select systems were also evaluated using a Variation Stage assessment in which compositional variations were introduced. In addition, assessments of the impacts of nepheline formation potential and the SO{sub 4}{sup -} solubility limit on the projected operating windows are also provided. Although this information was used as part of the technical basis leading to CBU's development of the preferred SB4 preparation plan, none of the options presented in this report was selected as the preferred plan. Therefore, the information is presented without significant interpretation of the resulting operating windows, but the projected windows are provided so additional insight can be explored if desired. Detailed assessments of the projected operating windows (using both Nominal and Variation Stage assessments) of the preferred sludge preparation plan with candidate frits are to be documented elsewhere. The information provided in this report is focused solely on model-based projections of the operating windows for various SB4 blending strategies of interest. Although nepheline formation potential is monitored via model predictions as a part of this assessment, experimental work investigating the impact of nepheline on glass quality is also being addressed in a parallel study. The results of this paper study and the experimental assessments of melt rate, SO{sub 4} solubility, and/or nepheline formation potential are all critical components of the inputs into the frit selection process for SB4.

  16. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-06-09T23:59:59.000Z

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

  17. Template Synthesis of Hollow Sb Nanoparticles as a High-Performance Lithium Battery Anode Material

    E-Print Network [OSTI]

    Cho, Jaephil

    Template Synthesis of Hollow Sb Nanoparticles as a High-Performance Lithium Battery Anode Material­14 the use of metal and carbon composites,15­20 and the introduction of nano- sized metals,21­25 have been reported. Studies involving hollow lithium reactive metal, however, have yet to be reported, although

  18. Engineering Sciences SB ESE Track Rev. July 2014 1/6

    E-Print Network [OSTI]

    Chou, James

    b or 21a) AM 101 ­ Statistical Inference for Scientists & Engineers ES 150 ­ Intro to Probability with Engineering Applications Statistics 110 ­ Introduction to Probability 1.0 _______ Applied Mathematics (1halfEngineering Sciences SB ­ ESE Track Rev. July 2014 1/6 Plan of Study for the Environmental Science

  19. Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation

    E-Print Network [OSTI]

    Im, Jae-taek

    2009-05-15T23:59:59.000Z

    The purpose of this work was to study learn about grain refinement mechanisms and texture development in cast n-type Bi90Sb10 alloy caused by severe plastic deformation. The practical objective is to produce a fine grained and textured...

  20. Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure

    E-Print Network [OSTI]

    Wang, Wei Hua

    Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure J. Zhu1 *, J. L. Zhang1 *, P superconductivity and topology nature. A s new states of quantum matter, topological insulators are characterized to topological insulators, topological superconductors are expected to have a full pairing gap in the bulk

  1. Defining Good Infill A Convening Report on SB 226 and the California

    E-Print Network [OSTI]

    Kammen, Daniel M.

    with the facilitation of the discussion and presented their draft regulations for feedback. This report provides a brief) and SB 375 (Steinberg), state planning priorities, water conservation and energy efficiency standards, the performance standards include requirements that residential and commercial projects meet or exceed specified

  2. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F. [Blackett Laboratory, Imperial College London, SW7 2BZ (United Kingdom); Lambert, C. J. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Solin, S. A. [Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130 (United States)

    2013-12-04T23:59:59.000Z

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  3. Microstructure and conductance-slope of InAs/GaSb tunnel diodes

    SciTech Connect (OSTI)

    Iutzi, Ryan M., E-mail: iutzi@mit.edu; Fitzgerald, Eugene A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-06-21T23:59:59.000Z

    InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected by materials defects and nonidealities. We present measurements of the conductance slope for various InAs/GaSb heterojunctions via two-terminal electrical measurements, which removes three-terminal parasitics and enables direct study on the effect of microstructure on tunnelling. Using this, we can predict how subthreshold swings in TFETs can depend on microstructure. We also demonstrate growth and electrical characterization for structures grown by metalorganic chemical vapor deposition (MOCVD)—a generally more scalable process compared with molecular beam epitaxy (MBE). We determine that misfit dislocations and point defects near the interface can lead to energy states in the band-gap and local band bending that result in trap-assisted leakage routes and nonuniform band alignment across the junction area that lower the steepness of the conductance slope. Despite the small lattice mismatch, misfit dislocations still form in InAs on GaSb due to relaxation as a result of large strain from intermixed compositions. This can be circumvented by growing GaSb on InAs, straining the GaSb underlayer, or lowering the InAs growth temperature in the region of the interface. The conductance slope can also be improved by annealing the samples at higher temperatures, which we believe acts to annihilate point defects and average out major fluctuations in band alignment across the interface. Using a combination of these techniques, we can greatly improve the steepness of the conductance slope which could result in steeper subthreshold swings in TFETs in the future.

  4. Highly mismatched N-rich GaN{sub 1-x}Sb{sub x} films grown by low temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Yu, K. M.; Walukiewicz, W. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)] [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Sarney, W. L.; Svensson, S. P. [US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)] [US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); Novikov, S. V.; Foxon, C. T. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)] [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Detert, D.; Zhao, R. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States) [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Denlinger, J. D. [Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)] [Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States) [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)

    2013-03-11T23:59:59.000Z

    We have grown N-rich, dilute Sb GaN{sub 1-x}Sb{sub x} alloys by low temperature molecular beam epitaxy. At low growth temperature of <100 Degree-Sign C the material loses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm at a Sb composition of >4 at. %. Despite the different microstructures found for GaN{sub 1-x}Sb{sub x} alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content >30 at. %. GaN{sub 1-x}Sb{sub x} alloys with less than 5 at. % Sb show sufficient bandgap reduction ({approx}2 eV), making them suitable for photoelectrochemical applications.

  5. J.C. Hillesheim, F.I. Parra,M. Barnes, N.A. Crocker, H. Meyer, W.A. Peebles, R. Scannell, A. Thornton, and the MAST Team

    E-Print Network [OSTI]

    J.C. Hillesheim, F.I. Parra,M. Barnes, N.A. Crocker, H. Meyer, W.A. Peebles, R. Scannell, A, 4 H. Meyer, 1 W.A. Peebles, 4 R. Scannell, 1 A. Thornton, 1 and the MAST Team 1 1 CCFE, Culham rotation on collisionality in MAST J. C. Hillesheim,1, F.I. Parra,2, 1 M. Barnes,3 N.A. Crocker,4 H. Meyer

  6. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)] [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Bandyopadhyay, S.; Banerjee, Aritra, E-mail: arbphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India) [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 (India); Mandal, P.; Srihari, Velaga [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)] [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Deb, A. K. [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)] [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)

    2013-12-09T23:59:59.000Z

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  7. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-09-14T23:59:59.000Z

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  8. Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion

    SciTech Connect (OSTI)

    Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2014-12-15T23:59:59.000Z

    Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.5–5 nm.

  9. Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA

    SciTech Connect (OSTI)

    Chakraborty, Romy; Brodie, Eoin L; Faybishenko, Boris; Piceno, Yvette M; Tom, Lauren; Choudhuri, Swati; Beller, Harry R; Liu, Jenny; Torok, Tamas; Joyner, Dominique C; Joachimiak, Marcin P; Zhou, Aifen; Van Nostrand, Joy D; Zhou, Joe; Long, Phil E; Newcomer, Darrell R; Andersen, Gary L; Hazen, Terry C.

    2010-05-17T23:59:59.000Z

    Hexavalent Chromium is a widespread contaminant found in soil, sediment, and groundwater. In order to stimulate microbially-mediated reduction of Cr(VI), a poly-lactate compound (HRC) was injected into the Chromium-contaminated aquifer at the Hanford (WA) 100H site in 2004. Cr(VI) concentrations rapidly declined to below the detection limit and remained so for more than three years after injection. Based on the results of the bacterial community composition using high-density DNA 16S rRNA gene microarrays, we observed the community to transition through denitrifying, ironreducing and sulfate-reducing populations. As a result, we specifically focused isolation efforts on three bacterial species that were significant components of the community. Positive enrichments in defined anaerobic media resulted in the isolation of an iron-reducing Geobacter metallireducens-like isolate, a sulfate-reducing Desulfovibrio vukgaris-like strain and a nitrate-reducing Pseudomonas stutzeri-like isolate among several others. All of these isolates were capable of reducing Cr(VI) anoxically and have been submitted for genome sequencing to JGI. To further characterize the microbial, and geochemical mechanisms associated with in situ Cr(VI) reduction at the site, additional HRC was injected in 2008. The goal was to restimulate the indigenous microbial community and to regenerate the reducing conditions necessary for continued Cr(VI) bio-immobilization in the groundwater. Analysis of the microbial populations post-injection revealed that they recovered to a similar density as after the first injection in 2004. In this study, we present the results from our investigation into microbially-mediated Cr(VI) reduction at Hanford, and a comparison of the microbial community development following two HRC injections four years apart.

  10. Time resolved magneto-optical studies of ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Frazier, M.; Kini, R. N.; Nontapot, K.; Khodaparast, G. A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences 02-668 Warsaw (Poland); Liu, X.; Furdyna, J. K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2008-02-11T23:59:59.000Z

    We report time resolved magneto-optical measurements in InMnSb ferromagnetic films with 2% and 2.8% Mn contents grown by low temperature molecular beam epitaxy. In order to probe a possible interaction between the spins of photoexcited carriers and the Mn ions, we measured spin dynamics before and after aligning the Mn ions by applying an external magnetic field at temperatures above and below the samples' Curie temperatures. We observed no significant temperature or magnetic field dependence in the relaxation times and attribute the observed dynamics entirely to the relaxation of photoexcited electrons in the conduction band where the s-d coupling with the localized Mn ions is significantly weaker compared to the p-d exchange coupling. We observed several differences in the optical response of our InMnSb samples which could have been influenced mainly by the samples' growth conditions.

  11. Synthesis and transport property of AgSbTe{sub 2} as a promising thermoelectric compound

    SciTech Connect (OSTI)

    Wang Heng; Li Jingfeng; Zou Minmin; Sui Tao [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2008-11-17T23:59:59.000Z

    Polycrystalline AgSbTe{sub 2} ternary compound materials with high phase purity were fabricated using a combined process of mechanical alloying and spark plasma sintering. It was found that stoichiometric AgSbTe{sub 2} is a promising composition for low-and-mediate temperature applications, whose ZT reaches 1.59 at 673 K, benefiting from its extremely low thermal conductivity (0.30 W/mK) in addition to its low electrical resistivity (<1.1x10{sup -4} {omega} m) and large positive Seebeck coefficient (260 {mu}V/K). On the other hand, deviating from this formula would lead to unstable phase structures and higher thermal conductivity, which make the samples less attractive as thermoelectric materials or components of thermoelectric systems.

  12. Doping Effects on the Thermoelectric Properties of Cu3SbSe4

    SciTech Connect (OSTI)

    Skoug, Eric [Michigan State University, East Lansing; Cain, Jeffrey D. [Michigan State University, East Lansing; Morelli, Donald [Michigan State University, East Lansing; Majsztrik, Paul W [ORNL; Kirkham, Melanie J [ORNL; Lara-Curzio, Edgar [ORNL

    2011-01-01T23:59:59.000Z

    We present the first systematic doping study on the ternary semiconductor Cu3SbSe 4 . We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 W/cmK^2 . The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT=0.72 at 630K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.

  13. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06T23:59:59.000Z

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  14. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  15. Optical nonlinear absorption characteristics of Sb{sub 2}Se{sub 3} nanoparticles

    SciTech Connect (OSTI)

    Muralikrishna, Molli, E-mail: muralikrishnamolli@sssihl.edu.in; Kiran, Aditha Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Ravikanth, B., E-mail: muralikrishnamolli@sssihl.edu.in; Sowmendran, P., E-mail: muralikrishnamolli@sssihl.edu.in; Muthukumar, V. Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Venkataramaniah, Kamisetti, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

    2014-04-24T23:59:59.000Z

    In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb{sub 2}Se{sub 3}) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb{sub 2}Se{sub 3} nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

  16. Photoemission study of the electronic structure and charge density waves of Na2Ti2Sb2O

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tan, S. Y.; Jiang, J.; Ye, Z. R.; Niu, X. H.; Song, Y.; Zhang, C. L.; Dai, P. C.; Xie, B. P.; Lai, X. C.; Feng, D. L.

    2015-04-30T23:59:59.000Z

    The electronic structure of Na2Ti2Sb2O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na2Ti2Sb2O in the non-magnetic state, which indicates that there is no magnetic order in Na2Ti2Sb2O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na2Ti2Sb2O. Photon energy dependent ARPES results suggest that the electronic structure of Na2Ti2Sb2O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV at 7 K, indicating that Na2Ti2Sb2O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)

  17. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-21T23:59:59.000Z

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  18. High-Temperature Order/Disorder Transition in the Thermoelectric Cu3SbSe3

    SciTech Connect (OSTI)

    Kirkham, Melanie J [ORNL; Majsztrik, Paul W [ORNL; Skoug, Eric [Michigan State University, East Lansing; Morelli, Donald [Michigan State University, East Lansing; Wang, Hsin [ORNL; Porter, Wallace D [ORNL; Payzant, E Andrew [ORNL; Lara-Curzio, Edgar [ORNL

    2011-01-01T23:59:59.000Z

    We report the results from an investigation into the structural evolution of a potential new thermoelectric material, Cu3SbSe3, as a function of temperature from 25 to 390 C. From high-temperature X-ray diffraction data, the refined lattice parameters were seen to change non-linearly, but continuously, with temperature, with an increased rate of thermal expansion in the a and b lattice parameters from around 125 C until around 175 C and negative thermal expansion in the c axis from around 100 C until around 175 C. Crystallographic charge flipping analysis indicated an increase in the disorder of the copper cations with temperature. This reversible order/disorder phase transition in Cu3SbSe3 affects the transport properties, as evidenced by thermal diffusivity measurements, which change from negative to positive slope at the transition temperature. This structural change in Cu3SbSe3 has implications for its potential use in thermoelectric generators.

  19. Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

    SciTech Connect (OSTI)

    Maslar JE, Hurst WS, Wang CA

    2007-04-05T23:59:59.000Z

    Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by {approx}20% to {approx}65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

  20. E v e n t s & T o p i c s i n R e n e wa b l e E n...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

  1. SEATILE, WA October 1972

    E-Print Network [OSTI]

    'lnpml"nL. in r " arch in the fishery sciences, including hiology, tpchnology, and ngin ring. The publications al'P writtpn bv scientisL and oth r staff meml){'rs of the 'ational ceanic and Atmosph 'ric Administration.' for oth r scipnlific and t(> hnieal publications in the marine sciences. Individual copi s ar a

  2. 20121114 Riverton drinking wa...

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -KWatertown Arsenal' TO:Sherwood,DOEWhere

  3. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28T23:59:59.000Z

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  4. Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions

    SciTech Connect (OSTI)

    Caillat, T.; Borshchevsky, A.; Fleurial, J.P.

    1997-07-01T23:59:59.000Z

    {beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

  5. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Dawson, L. Ralph (Albuquerque, NM); Fritz, Ian J. (Albuquerque, NM); Kurtz, Steven R. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  6. Doping and pressure study of U sub 3 Sb sub 4 Pt sub 3

    SciTech Connect (OSTI)

    Canfield, P.C.; Lacerda, A.; Thompson, J.D.; Sparn, G.; Beyermann, W.P.; Hundley, M.F.; Fisk, Z.

    1991-01-01T23:59:59.000Z

    The effects of doping and pressure on the U{sub 3}Sb{sub 4}Pt{sub 3} system have been studied. Substitution of either trivalent Y or Lu for U causes significant changes in temperature dependence of the electrical resistance and magnitude of the linear coefficient of the specific heat, {gamma}. However, doping with tetravalent Th causes little change in {gamma}, even though it affects the electrical resistance in a manner similar to that seen in the cases of Lu and Y. Finally, the application of hydrostatic pressures up to 16.5 kbar causes no significant change in the electrical resistance. 10 refs., 4 figs.

  7. Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys

    SciTech Connect (OSTI)

    Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

    2009-03-09T23:59:59.000Z

    We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5-15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT{approx}1.56 at 300 K, more than 50% improvement of that of the commercial Bi{sub 2}Te{sub 3} ingot materials.

  8. Angular dependence of metamagnetic transitions in DyAgSb2

    E-Print Network [OSTI]

    Myers, KD; Canfield, PC; Kalatsky, VA; Pokrovsky, Valery L.

    1999-01-01T23:59:59.000Z

    -dependent critical fields. Recent theoretical work2 has analyzed these data within the frame- PRB 590163-1829/99/59~2!/1121~8!/$15.00 c transitions in DyAgSb2 P. C. Canfield , Iowa State University, Ames, Iowa 50010 V. L. Pokrovsky , College Station, Texas...! are magnetic isotherm for the sample cooled to 2 K from 12 K in a 19.7 kOe field. Note: the plateau at 19.7 kOe is stabilized by field cool- PRB 59, AND POKROVSKY ing. Inset: M (T) in 19.7 kOe for increasing ~s! and decreasing temperature ~j!. O given...

  9. Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface

    SciTech Connect (OSTI)

    Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba [Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan); Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu [Department of Applied Chemistry, Graduate School of Engineering, University of Tokyo, Tokyo 113-0033 (Japan); Kasukabe, Yoshitaka [Department of Electronic Engineering/International Student Center, Tohoku University, Sendai 980-8578 (Japan)

    2004-12-15T23:59:59.000Z

    We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

  10. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

    SciTech Connect (OSTI)

    Rahimi, Nassim, E-mail: nrahimi@unm.edu; Aragon, Andrew A.; Romero, Orlando S.; Shima, Darryl M.; Rotter, Thomas J.; Mukherjee, Sayan D.; Balakrishnan, Ganesh [Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Lester, Luke F. [Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, 302 Whittemore, Blacksburg, Virginia, 24061 (United States)

    2013-12-01T23:59:59.000Z

    Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 ??mm and specific contact resistances of 1 × 10{sup ?6} ??cm{sup 2} are observed.

  11. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16T23:59:59.000Z

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  12. Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials

    E-Print Network [OSTI]

    Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2-like" exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3. It is found that crystal symmetry breaking

  13. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe J. Akola1,2 and R. O. Jones1 1Institut für Festkörperforschung, Forschungszentrum to characterize the amorphous structure of the prototype materials Ge2Sb2Te5 and GeTe. In both, there is long

  14. Synthesis and thermoelectric properties of Ce(Ru0.67Rh0.33)4Sb12. Geoff D. Staneff1

    E-Print Network [OSTI]

    Asimow, Paul D.

    Synthesis and thermoelectric properties of Ce(Ru0.67Rh0.33)4Sb12. Geoff D. Staneff1 , Paul D compositions show promise for thermoelectric applications. Current work was undertaken with a nominal composition of Ce(Ru0.67Rh0.33)4Sb12 to experimentally verify its potential as an n-type thermoelectric

  15. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W. (Livermore, CA); Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong (Livermore, CA); Wu, Kuang Jen J. (Cupertino, CA)

    2007-05-29T23:59:59.000Z

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  16. Structural investigation on Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses using x-ray photoelectron spectra

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Xiang, Shen [College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Si-Wei; Wang, Rong-Ping, E-mail: rongping.wang@anu.edu.au [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang [Department of Applied Physics, Chongqing University, Chongqing 401331 (China)

    2014-05-14T23:59:59.000Z

    The structure of Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses (x?=?7.5, 10, 15, 20, 25, 27.5, 30, and 32.5 at. %) has been investigated by x-ray photoelectron spectroscopy (XPS). Different structural units have been extracted and characterized by decomposing XPS core level spectra, the evolution of the relative concentration of each structural unit indicates that, the relative contributions of Se-trimers and Se-Se-Ge(Sb) structure decrease with increasing Ge content until they become zero at chemically stoichiometric glasses of Ge{sub 25}Sb{sub 10}Se{sub 65}, and then the homopolar bonds like Ge-Ge and Sb-Sb begin to appear in the spectra. Increase of homopolar bonds will extend band-tails into the gap and narrow the optical band gap. Thus, the glass with a stoichiometric composition generally has fewer defective bonds and larger optical bandgap.

  17. Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2012-12-03T23:59:59.000Z

    In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

  18. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

    SciTech Connect (OSTI)

    Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2014-07-14T23:59:59.000Z

    In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5??m. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325?K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150?K–325?K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(?)?=?1?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?300?K and D*(?)?=?5?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?250?K, which is easily achievable with a one stage TE cooler.

  19. Decay heat removal during SB LOCA with loss of all feedwater

    SciTech Connect (OSTI)

    Prosek, A.; Mavko, B.; Petelin, S. [Jozef Stefan Institute, Ljubljana (Slovenia). Reactor Engineering Division

    1994-12-31T23:59:59.000Z

    The aim of this research was to investigate decay heat removal during SB LOCA with simultaneous loss of all feedwater in a two loop PWR plant. Following a SB LOCA, the major concern is to keep the core covered assuring decay heat removal from the core thereby preventing cladding damage. Analysis was performed based on the data for Krsko NPP in Slovenia. The spectrum of break sizes in the cold leg was analyzed using the RELAP5/MOD2 code. The results indicate that when the break diameter is lower than 2.5 cm, the steam generators will dry out and the primary side bleed and feed procedure should be initiated. For break diameters between 2.5 cm to 5.1 cm the decay heat can be removed by the break flow and by relieving the steam through the steam generator relief valves. For break diameters greater than 5.1 cm the break flow is sufficient to remove all dissipated decay heat.

  20. SeZnSb alloy and its nano tubes, graphene composites properties

    SciTech Connect (OSTI)

    Singh, Abhay Kumar [Department of Physics, Indian Institute of Physics, Bangalore-560012 (India)

    2013-04-15T23:59:59.000Z

    Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se{sub 96}-Zn{sub 2}-Sb{sub 2} and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se{sub 96}-Zn{sub 2}-Sb{sub 2} alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D) have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80%) in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

  1. Effect on Sb on the Properties of GaInP Top Cells: Preprint

    SciTech Connect (OSTI)

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01T23:59:59.000Z

    It is well known that the efficiency of GaInP/GaAs tandem solar cells is limited by the band gap of the GaInP top cell, which, in turn, is determined by the degree of compositional ordering in GaInP base layer. Attempts to raise the band gap by the addition of Al to the top cell have met with limited success due to the strong affinity between Al and oxygen. Here we investigate a different approach. It has been shown that the presence of antimony on the surface of GaInP during its growth suppresses the ordering process and increases the band gap. In this paper, we study the effects of Sb on the properties of GaInP top cells. We show that, in addition to raising the band gap of GaInP, it also increases the incorporation of Zn and changes the relative incorporation of Ga and In. These effects depend strongly on the substrate orientation, growth temperature and rate, and the Sb/P ratio in the gas phase. We show that the band gap of the GaInP top cell (and the Voc) can be increased without reducing the minority carrier collection efficiency. The implications of these results are presented and discussed.

  2. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect (OSTI)

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B., E-mail: janes@ecn.purdue.edu [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Akatay, Cem [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Khan, Mohammad Ryyan; Alam, Muhammad A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Maeda, Kosuke [Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta–cho, Midori-ku, Yokohama 226-8502 (Japan); Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Deacon, Russell S.; Ishibashi, Koji [Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Chen, Yong P. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 (United States); Sands, Timothy D. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-08-28T23:59:59.000Z

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150?nm), large branches (average diameter of 100?nm), and small branches (average diameter of sub-10?nm to sub-20?nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420?°C in argon produced single crystalline structures along ?311? directions for the branches and along ?111? for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  3. Felix Bildhauer & Roland Schfer (eds.), Proceedings of the 9th Web as Corpus Workshop (WaC-9) @ EACL 2014, pages 2935, Gothenburg, Sweden, April 26 2014. c 2014 Association for Computational Linguistics

    E-Print Network [OSTI]

    Linguistics {bs,hr,sr}WaC ­ Web corpora of Bosnian, Croatian and Serbian Nikola Ljubesi´c University of Zagreb of top-level-domain web corpora of Bosnian, Croatian and Serbian. For constructing the corpora we use the process of building web corpora of Bosnian, Croatian and Serbian by crawling the .ba, .hr and .rs TLDs

  4. UW School of Oceanography Box 357940 206-543-5062 UW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206-543-0463

    E-Print Network [OSTI]

    jeopardize future work on Oceanographic research vessels. Initials Required 9. Radiation Protection ProgramUW School of Oceanography Box 357940 206-543-5062 UW EH&S Radiation Safety Section Box 354400 201-543-5062 UW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206

  5. UW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206-543-0463 *Your Social Security Number (SSN) is requested to better track and coordinate your records within our

    E-Print Network [OSTI]

    to the best of my knowledge. I agree to conform to the Rules and Regulations for Radiation Protection WAC-246 of Radiation Protection: Where When Instructor Duration b) Radioactivity Measurement StandardizationUW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206

  6. 1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA

    E-Print Network [OSTI]

    1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pidhttp://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA list of genes that may

  7. NOx emissions retrofit at Reliant Energy, W.A. Parish Generating Station, Unit 7: Achieving 0.15 lb/MBtu

    SciTech Connect (OSTI)

    Gessner, T.M.; Hoh, R.H.; Ray, B.; Dorazio, T.; Jennings, P.; Sikorski, K.

    1999-07-01T23:59:59.000Z

    The current Clean Air Act (CAA), Title 1 regulations require States to develop implementation plans (SIPs) which address NO{sub x} emissions as part of the ozone non-attainment requirements. The EPA has recommended NO{sub x} limits of 0.15 lb/MBtu for utility boilers. In this paper, Reliant Energy and ABB C-E Services, Inc. will discuss a project where 0.15 lb NO{sub x}/MBtu can be achieved with the TFS 2000{trademark} R firing system and highly reactive Powder River Basin (PRB) fuels. Reliant Energy will retrofit their W.A. Parish Unit 7 with this system in the first quarter of 1999. This is part of Reliant Energy's drive to lower NO{sub x} emissions and meet future air quality requirements at the W.Q. Parish station.

  8. Nepheline Formation Study for Sludge Batch 4 (SB4): Phase 1 Experimental Results

    SciTech Connect (OSTI)

    Peeler, D. K.; Edwards, T. B.; Reamer, I.A.; Workman, R. J.

    2005-09-30T23:59:59.000Z

    Although it is well known that the addition of Al{sub 2}O{sub 3} to borosilicate glasses enhances the durability of the waste form (through creation of network-forming tetrahedral Na+-[AlO{sub 4/2}]{sup -} pairs), the combination of high Al{sub 2}O{sub 3} and Na{sub 2}O can lead to the formation of nepheline (NaAlSiO{sub 4})--which can negatively impact durability. Given the projected high concentration of Al{sub 2}O{sub 3} in SB4 (Lilliston 2005) and the potential use of a high Na{sub 2}O based frit to improve melt rate and a high Na{sub 2}O sludge due to settling problems, the potential formation of nepheline in various SB4 systems continues to be assessed. Twelve SB4-based glasses were fabricated and their durabilities (via the Product Consistency Test [PCT]) measured to assess the potential for nepheline formation and its potential negative impact on durability. In terms of ''acceptability'', the results indicate that all of the study glasses produced are acceptable with respect to durability as defined by the PCT (normalized boron release values for all nepheline (NEPH) glasses were much lower than that of the Environmental Assessment (EA) glass (16.695 g/L)). The most durable glass is NEPH-04 (quenched) with a normalized boron release (NL [B]) of 0.61 g/L, while the least durable glass is NEPH-01 centerline canister cooled (ccc) with an NL [B] of 2.47 g/L (based on the measured composition). In terms of predictability, most of the study glasses are predictable by the {Delta}G{sub p} model. Those that are not predictable (i.e., they fall outside of the prediction limits) actually fall below the prediction interval (i.e., they are over predicted by the model) suggesting the model is conservative. The Phase 1 PCT results suggest that for those glasses prone to nepheline formation (using the 0.62 value developed by Li et al. (2003) as a guide), a statistically significant difference in PCT response was observed for the two heat treatments but the impact on durability was of little or no practical concern. When one couples the PCT responses with the X-Ray Diffraction (XRD) results and/or visual observations, one could conclude that the formation of nepheline in these glasses does have a negative impact on durability. However, that impact may be of statistical significance, but the practical impact may not be sufficient to avoid a specific candidate frit for the SB4 glass system. The results of this study not only suggest that the 0.62 value appears to be a reasonable guide to monitor sludge--frit systems with respect to potential nepheline formation, but also that the impact of nepheline, although statistically significant, has little or no practical impact in the SB4 system to durability as measured by the PCT. This latter statement must be qualified to some extent given only two glasses were selected which were actually ''prone to nepheline formation'' based on this general guide and the relatively volume % of nepheline formed based on XRD results ({approx} 0.5 vol%). If the presence of nepheline has no appreciable, adverse impact on durability for the recently revised SB4 systems, then as decisions regarding the viability of the SB4 options and the down select of candidate frits are pursued, little weight will be given to minimizing the likelihood of nepheline and the decisions will be dominated by waste throughput criteria. That is, the frit selection process will not have to consider the impact of nepheline on the ultimate durability of the product and can focus on recommending a frit that when coupled with the sludge can be processed over a waste loading (WL) interval of interest to the Defense Waste Processing Facility (DWPF) with melt rates meeting production expectations.

  9. Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

    2014-03-21T23:59:59.000Z

    Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

  10. Solubility study of Yb in n-type skutterudites YbxCo4Sb12 and their enhanced thermoelectric properties

    E-Print Network [OSTI]

    Yang, J.

    The solubility of Yb in Yb[subscript x]Co[subscript 4]Sb[subscript 12 was reported to be 0.19 in bulk skutterudites made by melting and slow cooling method. Surprisingly we increased x close to 0.5 by a special sample ...

  11. Theoretical performance of very long wavelength InAs/InxGa1 xSb superlattice based infrared detectors

    E-Print Network [OSTI]

    Flatte, Michael E.

    , and satellite-based surveillance. Present day infrared detection technology based on bulk Hg1 xCdxTe MCT alloys is facing significant challenges in this spectral region due to i a sensitive dependence of the energy gap tunneling currents. An alter- native infrared system, based on InAs/InxGa1 xSb superlat- tices SLs , shows

  12. Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas- phase=pdfcov Published by the AIP Publishing Articles you may be interested in Nanoscale nuclei in phase change materials phase change material clusters made by gas-phase condensation G. E. Ghezzi,1,2 R. Morel,3 A. Brenac,3 N

  13. Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma

    E-Print Network [OSTI]

    Pellegrino, Sergio

    Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma Department, however existing techniques focus on relatively simple geometrical rules and algorithms to map a grid onto in the Millennium Dome, London . Use of a grid structure, consisting of a lattice of rods (see Figure 1) may be more

  14. Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process

    SciTech Connect (OSTI)

    Jung, B.Y.; Choi, J.S.; Oh, T.S.; Hyun, D.B.

    1997-07-01T23:59:59.000Z

    Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

  15. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARA–Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-06-23T23:59:59.000Z

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

  16. RELAP5 simulation of SB LOCA in a VVER 440 model

    SciTech Connect (OSTI)

    Parzer, I.; Mavko, B.; Petelin, S.

    1992-01-01T23:59:59.000Z

    The VVER-440-type plants differ considerably from western-type pressurized water reactors (PWR). The two main distinguishing characteristics are horizontal steam generators and loop seals in both hot and cold legs, which are lately a great safety concern worldwide. In 1987, the International Atomic Energy Agency (IAEA) organized and sponsored one of the tests performed on the Hungarian PMK-NVH test facility and called it IAEA-SPE-2. The test was chosen from a wider test matrix performed to investigate emergency core cooling system capability in VVER-440 plants for a small-break loss-of-coolant accident (SB LOCA). PMK-NVA is a one-loop, full-height, full-pressure model of the Hungarian Paks nuclear power plant, type VVER-440, Soviet production. The facility power level is 100%, according to the 1:2070 scaling factor.

  17. Properties of CoSb{sub 3} films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Christen, H.M.; Mandrus, D.G.; Norton, D.P.; Boatner, L.A.; Sales, B.C.

    1997-07-01T23:59:59.000Z

    Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

  18. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  19. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-28T23:59:59.000Z

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  20. NGC 1266: Characterization of the Nuclear Molecular Gas in an Unusual SB0 Galaxy

    E-Print Network [OSTI]

    Glenn, Jason; Maloney, Philip R; Kamenetzky, Julia R

    2015-01-01T23:59:59.000Z

    With a substantial nuclear molecular gas reservoir and broad, high-velocity CO molecular line wings previously interpreted as an outflow, NGC 1266 is a rare SB$0$ galaxy. Previous analyses of interferometry, spectrally resolved low-$J$ CO emission lines, and unresolved high-$J$ emission lines have established basic properties of the molecular gas and the likely presence of an AGN. Here, new spectrally resolved CO $J = 5 - 4$ to $J = 8 - 7$ lines from {\\it Herschel Space Observatory} HIFI observations are combined with ground-based observations and high-$J$ {\\it Herschel} SPIRE observations to decompose the nuclear and putative outflow velocity components and to model the molecular gas to quantify its properties. Details of the modeling and results are described, with comparisons to previous results and exploration of the implications for the gas excitation mechanisms. Among the findings, like for other galaxies, the nuclear and putative outflow molecular gas are well represented by components that are cool ($...

  1. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect (OSTI)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

    2014-05-15T23:59:59.000Z

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  2. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

    2014-04-24T23:59:59.000Z

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  3. High thermoelectric performance BiSbTe alloy with unique low-dimensional structure

    SciTech Connect (OSTI)

    Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

    2009-06-01T23:59:59.000Z

    We report a detailed description of an innovative route of a melt spinning (MS) technique combined with a subsequent spark plasma sintering process in order to obtain high performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material, which possesses a unique low-dimensional structure. The unique structure consists of an amorphous structure, 5-15 nm fine nanocrystalline regions, and coherent interfaces between the resulting nanocrystalline regions. Measurements of the thermopower, electrical conductivity, and thermal conductivity have been performed over a range of temperature of 300-400 K. We found that MS technique can give us considerable control over the resulting nanostructure with good thermal stability during the temperature range of 300-400 K and this unique structure can effectively adjust the transport of phonons and electrons, in a manner such that it is beneficial to the overall thermoelectric performance of the material, primarily a reduction in the lattice thermal conductivity. Subsequently, this results in a maximum figure of merit ZT value of 1.56 at 300 K for p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material. This ZT value is over a 50% improvement of that of the state of the art commercial Bi{sub 2}Te{sub 3} materials. We also report results of thermal cycling of this material for over one hundred cycles between 300-400 K. Our work offers an innovative route for developing high performance bismuth telluride based alloys and devices, which have even broader prospects for commercial applications. This technique may also be applicable to other thermoelectric materials.

  4. Sustainable Land Management in Northern Namibia

    E-Print Network [OSTI]

    and low water holding capacity (Bolivia) #12;Perspective Similar soil (Kavango) #12;Increased Demand for Food + Energy Production Expansion onto Less Resilient Lands Reduced Production per Unit Area

  5. Bicon Namibia Consulting Engineers | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORT Americium/CuriumAguaBBBWind LtdFengliBenjaminBhoruka

  6. Dramatic thermal conductivity reduction by nanostructures for large increase in thermoelectric figure-of-merit of FeSb[subscript 2

    E-Print Network [OSTI]

    Chen, Gang

    In this report, thermal conductivity reduction by more than three orders of magnitude over its single crystal counterpart for the strongly correlated system FeSb[subscript 2] through a nanostructure approach was presented, ...

  7. Enhanced photoelectrochemical performance of rutile TiO{sub 2} by Sb-N donor-acceptor coincorporation from first principles calculations

    SciTech Connect (OSTI)

    Niu Mang; Xu Wenjie; Shao Xiaohong [College of Science, Beijing University of Chemical Technology, Beijing 100029 (China); Cheng Daojian [Division of Molecular and Materials Simulation, State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China)

    2011-11-14T23:59:59.000Z

    An effective non-metal (N) and non-transition metal (Sb) passivated co-doping approach is proposed to improve the photoelectochemical performance of rutile TiO{sub 2} for water-splitting by using first-principles calculations. It is found that the band edges of N + Sb co-doped TiO{sub 2} match with the redox potentials of water, and a narrow band gap (2.0 eV) is achieved for enhanced visible light absorption. The compensated donor (Sb) and acceptor (N) pairs could prevent the recombination of photo-generated electron-hole pairs. In addition, the N + Sb defect pairs tend to bind with each other, which could enhance the stability and N concentration of the system.

  8. Simulation of Crystallization in Ge[subscript 2]Sb[subscript 2]Te[subscript 2]: A Memory Effect in the Canonical Phase-Change Material

    E-Print Network [OSTI]

    Akola, J.

    Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied using four extensive (460 atoms, up to 4 ns) density functional/molecular dynamics simulations at 600 K. This phase change ...

  9. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect (OSTI)

    Li, C., E-mail: canli1983@gmail.com; Zhao, Y. F.; Fu, C. X.; Gong, Y. Y. [Center for Coordination Bond Engineering, School of Materials Science and Engineering, China Jiliang University (China); Chi, B. Q. [College of Modem Science and Technology, Jiliang University, Hangzhou, 310018 (China); Sun, C. Q. [Center for Coordination Bond Engineering, School of Materials Science and Engineering, China Jiliang University (China); School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 (Singapore)

    2014-10-15T23:59:59.000Z

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  10. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    SciTech Connect (OSTI)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01T23:59:59.000Z

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  11. Selenization of Sb{sub 2}Se{sub 3} absorber layer: An efficient step to improve device performance of CdS/Sb{sub 2}Se{sub 3} solar cells

    SciTech Connect (OSTI)

    Leng, Meiying; Luo, Miao; Chen, Chao; Qin, Sikai; Chen, Jie; Zhong, Jie; Tang, Jiang, E-mail: jtang@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, 430074 Hubei (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 Hubei (China)

    2014-08-25T23:59:59.000Z

    Sb{sub 2}Se{sub 3} appeared as a very promising solar absorber because of their attractive material, optical and electrical properties. Previously, we reported thermal evaporated superstrate CdS/Sb{sub 2}Se{sub 3} solar cell achieving 1.9% efficiency. In this letter, we improved device performance to 3.7% (Voc?=?0.335?V, Jsc?=?24.4?mA/cm{sup 2}, and FF?=?46.8%) by an additional selenization step. Careful external quantum efficiency, capacitance-voltage profiling, and photoresponse study indicated selenization probably compensated selenium loss during thermal evaporation, reducing V{sub Se} associated recombination loss and improving device performance.

  12. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre, E-mail: pierre.ruterana@ensicaen.fr; Wang, Yi, E-mail: pierre.ruterana@ensicaen.fr; Chen, Jun, E-mail: pierre.ruterana@ensicaen.fr; Chauvat, Marie-Pierre, E-mail: pierre.ruterana@ensicaen.fr [CIMAP, UMR 6252 CNRS, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex (France); El Kazzi, S.; Deplanque, L.; Wallart, X. [IEMN, UMR-CNRS 8520, CS 60069, 59652 Villeneuve d'Ascq Cedex (France)

    2014-10-06T23:59:59.000Z

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  13. Staircase and saw-tooth field emission steps from nanopatterned n-type GaSb surfaces

    SciTech Connect (OSTI)

    Kildemo, M.; Levinsen, Y. Inntjore; Le Roy, S.; Soenderga ring rd, E. [Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondlieim (Norway); Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondlieim, Norway and AB CERN, CH- 1211 Geneva 23 (Switzerland); Laboratoire Surface du Verre et Interfaces, UMR 125 Unite Mixte de Recherche CNRS/Saint-Gobain Laboratoire, 39 Quai Lucien Lefranc, F-93303 Aubervilliers Cedex (France)

    2009-09-15T23:59:59.000Z

    High resolution field emission experiments from nanopatterned GaSb surfaces consisting of densely packed nanocones prepared by low ion-beam-energy sputtering are presented. Both uncovered and metal-covered nanopatterned surfaces were studied. Surprisingly, the field emission takes place by regular steps in the field emitted current. Depending on the field, the steps are either regular, flat, plateaus, or saw-tooth shaped. To the author's knowledge, this is the first time that such results have been reported. Each discrete jump in the field emission may be understood in terms of resonant tunneling through an extended surface space charge region in an n-type, high aspect ratio, single GaSb nanocone. The staircase shape may be understood from the spatial distribution of the aspect ratio of the cones.

  14. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-09-15T23:59:59.000Z

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  15. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

    2012-01-17T23:59:59.000Z

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  16. The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001)

    SciTech Connect (OSTI)

    Bermudez, V. M. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2013-07-14T23:59:59.000Z

    Atomically clean surfaces of n-type GaSb (001) have been prepared by a combination of ex-situ wet-chemical treatment in HCl and in-situ annealing in a flux of H atoms in ultra-high vacuum (UHV). The surfaces are exposed to 'excited' O{sub 2} and studied using primarily x-ray photoelectron spectroscopy. Low O{sub 2} exposures, up to {approx}3 Multiplication-Sign 10{sup 3} Langmuirs (L), result in a partial passivation of electrically active defects as shown by a decrease in upward band bending. Adsorption of O{sub 2} in this exposure range appears to form mainly Ga{sup +1} sites, with little or no indication of Ga{sup +3}, and saturates at an O coverage of {approx}0.2-0.3 monolayers. For exposures of {approx}10{sup 4} L or higher, oxidation occurs through insertion into Ga-Sb bonds as indicated by the onset of Ga{sup +3} as well as of Sb{sup +4} and/or Sb{sup +5} together with the appearance of an O 1s feature. Defects resulting from this process cause a reversal of the band-bending change seen for smaller exposures. Data obtained for the composition of a native oxide formed in situ in UHV are compared with those for a 'practical' surface produced by processing under ambient conditions. These results suggest an optimum procedure for forming a Ga{sub 2}O{sub 3} layer prior to the growth by atomic layer deposition of an Al{sub 2}O{sub 3} layer.

  17. Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. Shalit y , B. Van

    E-Print Network [OSTI]

    Baden, Scott B.

    ``paper'' 2000/12/12 page 1 i i i i i i i i Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. The resultant infrastructure, called KeLP \\Lambda , has been applied to a variety of applications including­ tured adaptive refinement for ab­initio molecular dynamics [13]. A distinguishing feature of KeLP

  18. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

    2014-06-21T23:59:59.000Z

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  19. Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

    SciTech Connect (OSTI)

    Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Das, T. D. [Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2014-07-21T23:59:59.000Z

    Room temperature implantation of 60?keV Ar{sup +}-ions in GaSb to the fluences of 7?×?10{sup 16} to 3?×?10{sup 18} ions cm{sup ?2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

  20. Superconductivity, magnetic order, and quadrupolar order in the filled skutterudite system Pr 1 ? x Nd x Os 4 Sb 12

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ho, P.-C.; Yanagisawa, T.; Yuhasz, W. M.; Dooraghi, A. A.; Robinson, C. C.; Butch, N. P.; Baumbach, R. E.; Maple, M. B.

    2011-01-01T23:59:59.000Z

    Superconductivity, magnetic order, and the high field ordered phase have been investigated in the filled skutterudite system Pr1-xNdxOs?Sb?? as a function of composition x in magnetic fields up to 9 T and at temperatures between 50 mK and 10 K. Electrical resistivity measurements indicate that the high field ordered phase, which has been identified with antiferroquadruoplar order, persists to x ~ 0.5. The superconducting critical temperature Tc of PrOs?Sb?? is depressed linearly with Nd concentration to x ~ 0.55, whereas the Curie temperature TFM of NdOs?Sb?? is depressed linearly with Pr composition to (1-x) ~ 0.45. In the superconducting region, the upper critical field Hc2(x,0) is depressed quadratically with x in the range 0 c2(x,0) appears to be a result of pair breaking caused by the applied magnetic field and the exchange field associated with the polarization of the Nd magnetic moments in the superconducting state. From magnetic susceptibility measurements, the correlations between the Nd moments in the superconducting state appear to change from ferromagnetic in the range 0.3 ? x ? 0.6 to antiferromagnetic in the range 0 c2(x,0) with x.

  1. 60 keV Ar{sup +}-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect (OSTI)

    Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2014-10-14T23:59:59.000Z

    Room temperature irradiation of InSb(111) by 60?keV Ar{sup +}-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1?×?10{sup 17} to 3?×?10{sup 18} ions cm{sup ?2}. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  2. Characterization of the environmental fate of Bacillus thuringiensis var. kaurstaki (Btk) after pest eradication efforts in Seattle, WA and Fairfax county, VA

    SciTech Connect (OSTI)

    Ticknor, Lawrence [Los Alamos National Laboratory; Van Cuyk, Sheila M [Los Alamos National Laboratory; Deshpande, Alina [Los Alamos National Laboratory; Omberg, Kristin M [Los Alamos National Laboratory

    2008-01-01T23:59:59.000Z

    Understanding the fate of biological agents in the environment will be critical to recovery and restoration efforts after a biological attack. Los Alamos National Laboratory (LANL) is conducting experiments in the Seattle, WA and Fairfax County, VA areas to study agent fate in urban environments. As part of their gypsy moth suppression efforts, Washington State and Fairfax County have sprayed Bacillus thuringiensis var. kurstaki (Btk), a common organic pesticide for decades. Many of the spray zones have been in or near urban areas. LANL has collected surface and bulk samples from historical Seattle spray zones to characterize how long Btk persists at detectable levels in the environment, and how long it remains viable in different environmental matrices. This work will attempt to address three questions. First, how long does the agent remain viable at detectable levels? Second, what is the approximate magnitude and duration of resuspension? And third, does the agent transport into buildings? Data designed to address the first question will be presented. Preliminary results indicate Btk remains viable in the environment for at least two years.

  3. Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

    SciTech Connect (OSTI)

    Giard, E., E-mail: edouard.giard@onera.fr; Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haďdar, R. [ONERA, DOTA, Chemin de la Huničre, 91761 Palaiseau Cedex (France); Taalat, R.; Delmas, M.; Rodriguez, J.-B.; Christol, P. [Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugčne Bataillon, 34095 Montpellier Cedex 5 (France); Steveler, E.; Bardou, N. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Boulard, F. [CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)

    2014-07-28T23:59:59.000Z

    We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100?nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 ?m window equal to 42% for U{sub bias}?=??0.1?V, 77?K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

  4. XRD, Electron Microscopy and Vibrational Spectroscopy Characterization of Simulated SB6 HLW Glasses - 13028

    SciTech Connect (OSTI)

    Stefanovsky, S.V. [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation) [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation); Institute of Physical Chemistry and Electrochemistry RAS, Leninskii av. 31, Moscow 119991 (Russian Federation); Nikonov, B.S.; Omelianenko, B.I. [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation)] [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation); Choi, A.; Marra, J.C. [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)] [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)

    2013-07-01T23:59:59.000Z

    Sample glasses have been made using SB6 high level waste (HLW) simulant (high in both Al and Fe) with 12 different frit compositions at a constant waste loading of 36 wt.%. As follows from X-ray diffraction (XRD) and optical and scanning electron microscopy (SEM) data, all the samples are composed of primarily glass and minor concentration of spinel phases which form both isometric grains and fine cubic (?1 ?m) crystals. Infrared spectroscopy (IR) spectra of all the glasses within the range of 400-1600 cm{sup -1} consist of the bands due to stretching and bending modes in silicon-oxygen, boron-oxygen, aluminum-oxygen and iron-oxygen structural groups. Raman spectra showed that for the spectra of all the glasses within the range of 850-1200 cm{sup -1} the best fit is achieved by suggestion of overlapping of three major components with maxima at 911-936 cm{sup -1}, 988-996 cm{sup -1} and 1020-1045 cm{sup -1}. The structural network is primarily composed of metasilicate chains and rings with embedded AlO{sub 4} and FeO{sub 4} tetrahedra. Major BO{sub 4} tetrahedra and BO{sub 3} triangles form complex borate units and are present as separate constituents. (authors)

  5. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10T23:59:59.000Z

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  6. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E [ORNL; Berlijn, Tom [ORNL; Hahn, Steven E [ORNL; May, Andrew F [ORNL; Williams, Travis J [ORNL; Poudel, Lekhanath N [ORNL; Calder, Stuart A [ORNL; Fishman, Randy Scott [ORNL; Stone, Matthew B [ORNL; Aczel, Adam A [ORNL; Cao, Huibo [ORNL; Lumsden, Mark D [ORNL; Christianson, Andrew D [ORNL

    2015-01-01T23:59:59.000Z

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  7. Hydrothermal synthesis and thermoelectric properties of nanostructured Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds

    SciTech Connect (OSTI)

    Zhang, Yanhua [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China) [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Academy of Equipment Command and Technology, Beijing 102249 (China); Xu, Guiying [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Mi, Jianli [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark)] [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark); Han, Fei; Wang, Ze [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Ge, Changchun, E-mail: ccge@mater.ustb.edu.cn [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)

    2011-05-15T23:59:59.000Z

    Research highlights: {yields} Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} powders have been synthesized by a hydrothermal route. {yields} Hexagonal Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} naosheets due to the anisotropic growth of the crystals. {yields} The temperature gradients lead to directional arrangement nanosheet-agglomerates. {yields} Nanosheet-agglomerates are beneficial for improving the TE property of products. {yields} A maximum figure of merit of 0.86 is achieved at about 100 {sup o}C. -- Abstract: Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds have been prepared by hydrothermal synthesis at 150 {sup o}C for 24 h using SbCl{sub 3}, BiCl{sub 3} and tellurium powder as precursors. X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) have been applied to analyze the phase distributions, microstructures and grain sizes of the as-grown Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} products. It is found that the hydrothermally synthesized Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanopowders have a morphology dominated by irregular hexagonal sheets due to the anisotropic growth of the crystals. The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanosheets are parallelly stacked in certain direction to form sheet-agglomerates attribute to the temperature gradients in the solution.

  8. The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires

    SciTech Connect (OSTI)

    Ning, Feng; Wang, Dan; Tang, Li-Ming, E-mail: lmtang@hnu.edu.cn; Zhang, Yong; Chen, Ke-Qiu, E-mail: keqiuchen@hnu.edu.cn [Department of Applied Physics, Hunan University, Changsha 410082 (China)

    2014-09-07T23:59:59.000Z

    The effects of the chemical composition and strain on the electronic properties of [111] zinc-blende (ZB) and [0001] wurtzite (WZ) GaSb/InAs core-shell nanowires (NWs) with different core diameters and shell thicknesses are studied using first-principles methods. The band structures of the [111] ZB GaSb/InAs core-shell NWs underwent a noticeable type-I/II band alignment transition, associated with a direct-to-indirect band gap transition under a compressive uniaxial strain. The band structures of the [0001] WZ GaSb/InAs core-shell NWs preserved the direct band gap under either compressive or tensile uniaxial strains. In addition, the band gaps and the effective masses of the carriers could be tuned by their composition. For the core-shell NWs with a fixed GaSb-core size, the band gaps decreased linearly with an increasing InAs-shell thickness, caused by the significant downshift of the conduction bands. For the [111] ZB GaSb/InAs core-shell NWs, the calculated effective masses indicated that the transport properties could be changed from hole-dominated conduction to electron-dominated conduction by changing the InAs-shell thickness.

  9. Highly tunable electron transport in epitaxial topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films

    SciTech Connect (OSTI)

    He Xiaoyue; Guan Tong; Wang Xiuxia; Feng Baojie; Cheng Peng; Chen Lan; Li Yongqing; Wu Kehui [Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2012-09-17T23:59:59.000Z

    Atomically smooth, single crystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} films have been grown on SrTiO{sub 3}(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x=0.5{+-}0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} sample. These highly tunable (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators.

  10. Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis.

    SciTech Connect (OSTI)

    Cionca, C.; Walko, D. A.; Yacoby, Y.; Dorin, C.; Millunchick, J. M.; Clarke, R.; X-Ray Science Division; Univ. of Michigan; Hebrew Univ.

    2007-01-01T23:59:59.000Z

    We have used Bragg rod x-ray diffraction combined with a direct method of phase retrieval to extract atomic resolution electron-density maps of a complementary series of heteroepitaxial III-V semiconductor samples. From the three-dimensional electron-density maps we derive the monolayer spacings, the chemical compositions, and the characteristics of the bonding for all atomic planes in the film and across the film-substrate interface. InAs films grown on GaSb(001) under two different As conditions (using dimer or tetramer forms) both showed conformal roughness and mixed GaAs/InSb interfacial bonding character. The As tetramer conditions favored InSb bonding at the interface while, in the case of the dimer, the percentages corresponding to GaAs and InSb bonding were equal within the experimental error. The GaSb film grown on InAs(001) displayed significant In and As interdiffusion and had a relatively large fraction of GaAs-like bonds at the interface.

  11. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  12. Transport properties of partially-filled Ce{sub y}Co{sub 4}Sb{sub 12}

    SciTech Connect (OSTI)

    Uher, C.; Chen, B.; Hu, S.; Morelli, D.T.; Meisner, G.P.

    1997-07-01T23:59:59.000Z

    The authors have investigated the magnetic and transport properties of Ce{sub y}Co{sub 4}Sb{sub 12} filled skutterudites with the filling fraction y {le} 0.1. These compounds are n-type materials that develop a magnetic moment upon the presence of trivalent cerium. Cerium has a strong influence on all transport properties and even in small amounts it drastically reduces the lattice thermal conductivity. The resulting figures of merit are comparable to the values established previously for the p-type filled skutterudites.

  13. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect (OSTI)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

    2013-11-15T23:59:59.000Z

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  14. Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

    SciTech Connect (OSTI)

    Kagan, M. S., E-mail: kagan@cplire.ru; Altukhov, I. V. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Baranov, A. N. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Il'inskaya, N. D. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Paprotskiy, S. K. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Teissier, R. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Usikova, A. A. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)

    2013-11-15T23:59:59.000Z

    Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect)

  15. Low-temperature transport properties of the mixed-valence semiconductor Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3}

    SciTech Connect (OSTI)

    Nolas, G.S. [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States)] [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States); Harris, V.G.; Tritt, T.M. [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States)] [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States); Slack, G.A. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)] [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    1996-12-01T23:59:59.000Z

    We have measured the transport properties of Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3} from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb{sub 3} and IrSb{sub 3}. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru{sup 4+}- and Ru{sup 2+}-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed. {copyright} {ital 1996 American Institute of Physics.}

  16. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  17. Crystallographic analysis of the structure of livingstonite HgSb{sub 4}S{sub 8} from refined data

    SciTech Connect (OSTI)

    Borisov, S. V., E-mail: borisov@che.nsk.su; Pervukhina, N. V.; Magarill, S. A.; Kuratieva, N. V. [Russian Academy of Sciences, Nikolaev Institute of Inorganic Chemistry, Siberian Branch (Russian Federation); Vasil'ev, V. I., E-mail: itret@uiggm.nsc.ru [Russian Academy of Sciences, Institute of Geology and Mineralogy, Siberian Branch (Russian Federation)

    2010-03-15T23:59:59.000Z

    An X-ray diffraction study of mineral livingstonite (HgSb{sub 4}S{sub 8}) from Khaydarkan (Kyrgyzstan) has been performed on a Bruker Nonius X8Apex diffractometer with a 4K CCD detector (R = 0.031). The unit-cell parameters were found to be a = 30.1543(10) A, b = 3.9953(2) A, c = 21.4262(13) A, {beta} = 104.265(1){sup o}, V = 2501.7(2) A{sup 3}, Z = 8, d{sub calcd} = 5.013 g/cm{sup 3}, and sp. gr. A2/a. It was confirmed that livingstonite belongs to rod-layers structures. In one type of layer, two double Sb{sub 2}S{sub 4} chains are bound by disulfide groups [S{sub 2}]{sup 2-} (S-S 2.078(2) A); in the other type, these chains are bound via Hg{sup 2+} cations. A crystallographic analysis confirmed the existence of independent pseudotranslational ordering in the cation and anion matrices, which is characteristic of the lozenge-like structures of sulfides and sulfosalts.

  18. Study of a 1?eV GaNAsSb photovoltaic cell grown on a silicon substrate

    SciTech Connect (OSTI)

    Tan, K. H.; Loke, W. K.; Wicaksono, S.; Li, D.; Leong, Y. R.; Yoon, S. F. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)] [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sharma, P.; Milakovich, T.; Bulsara, M. T.; Fitzgerald, E. A. [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)] [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2014-03-10T23:59:59.000Z

    We report the performance of a 1?eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1?eV GaN{sub 0.018}As{sub 0.897}Sb{sub 0.085} photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700?°C for 5?min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (V{sub OC}) of 0.42?V and a short circuit current density (J{sub SC}) of 23.4?mA/cm{sup 2} while the device on the Si substrate showed a V{sub OC} of 0.39?V and a J{sub SC} of 21.3?mA/cm{sup 2}. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.

  19. Utah_wa_correctional_facility

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict SolarJohn Keeler,Washington

  20. Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass Guillaume Guery1,2

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass network, Université de Bordeaux I, Avenue du Dr Schweitzer, 33608 Pessac Cedex, France. Keywords: Chalcogenide glass; Raman spectroscopy; X-ray photoelectron spectroscopy; Glass properties Author whom correspondence should

  1. Confirmatory Survey Report for Area B1S/B2S at the Chevron Mining Washington Remediation Project, Washington, PA

    SciTech Connect (OSTI)

    W. C. Adams

    2007-11-20T23:59:59.000Z

    During the period of October 2 and 3, 2007, the Oak Ridge Institute for Science and Education (ORISE) performed confirmatory radiological survey activities which included gamma surface scans within Area B1S/B2S and the collection of soil samples from these areas.

  2. Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a)

    E-Print Network [OSTI]

    Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a) Peter-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub of these materials is important for predicting the field-driven heating and phase-change behavior. However

  3. Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell are with Stony Brook University, Stony Brook, NY.

    E-Print Network [OSTI]

    Mitchell, Joseph S.B.

    [Federal Aviation Administration, 2003]) lists weather as the leading cause (65% to 75%) of delays greater inclement weather, throughput is adversely affected. The Aviation Capacity Enhancement Plan (FAA ACE Plan. Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell

  4. Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1xZn2Sb2**

    E-Print Network [OSTI]

    Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1±xZn2Sb. Introduction Because of their ability to convert waste heat into electricity, thermoelectric materials have in efficiency, thermoelectric materials could pro- vide a substantial amount of electrical power from automotive

  5. Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder, and T. Caillat

    E-Print Network [OSTI]

    Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder their atomic composition. The thermoelectric properties were measured at room temperature in both directions. The thermoelectric figure-of-merit, ZT, was calculated from these properties. The best ZT was ~.5, given by annealed

  6. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  7. High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J; Snyder, G Jeffrey; Kauzlarich, Susan M

    2014-02-11T23:59:59.000Z

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  8. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

    SciTech Connect (OSTI)

    Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-02-24T23:59:59.000Z

    Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi{sub x}Sb{sub 1-x}, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, whereas Sb{sub 2}Se{sub 3} is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

  9. Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

    SciTech Connect (OSTI)

    Ashuach, Y.; Lakin, E.; Kaufmann, Y. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Saguy, C. [Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.il [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel)

    2014-09-28T23:59:59.000Z

    A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7?nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

  10. Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter

    SciTech Connect (OSTI)

    Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

    1995-01-05T23:59:59.000Z

    First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  11. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

    SciTech Connect (OSTI)

    SPAHN,OLGA B.; KLEM,JOHN F.

    2000-02-17T23:59:59.000Z

    The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

  12. Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique

    SciTech Connect (OSTI)

    Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K. [Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka,Surathkal - 575025, Mangalore (India)

    2014-01-28T23:59:59.000Z

    Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

  13. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  14. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr. [Air Force Institute of Technology, Wright Patterson Air Force Base, Ohio 45433 (United States); Gonzalez, L. P.; Murray, J. M.; Guha, S. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States); Schepler, K. L. [Air Force Research Laboratory, Sensors Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States)

    2010-10-15T23:59:59.000Z

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  15. Experimental Verification of the Van Vleck Nature of Long-Range Ferromagnetic Order in the Vanadium-Doped Three-Dimensional Topological Insulator Sb[subscript 2]Te[subscript 3

    E-Print Network [OSTI]

    Li, Mingda

    We demonstrate by high resolution low temperature electron energy loss spectroscopy (EELS) measurements that the long range ferromagnetic (FM) order in the vanadium- (V-)doped topological insulator Sb[subscript 2]Te[subscript ...

  16. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

    SciTech Connect (OSTI)

    Hoang, A. M.; Chen, G.; Chevallier, R.; Haddadi, A.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-23T23:59:59.000Z

    Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6??m. At 77?K, the photodiode exhibited a peak responsivity of 4.8?A/W, corresponding to a quantum efficiency of 46% at ?300?mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7?A/cm{sup 2}, it provided a specific detectivity of 1.4?×?10{sup 10} Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50?K.

  17. Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

    SciTech Connect (OSTI)

    Cho, S.; DiVenere, A.; Wong, G.K.; Ketterson, J.B.; Meyer, J.R.; Hoffman, C.A.

    1997-07-01T23:59:59.000Z

    The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

  18. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M. [Physics Department, Faculty of Science , Assiut University, Assiut, P.O. Box 71516 (Egypt); Moharram, A. H. [Faculty of Science, King Abdul Aziz Univ., Rabigh Branch, P.O. Box 433 (Saudi Arabia)

    2013-12-16T23:59:59.000Z

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  19. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect (OSTI)

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-23T23:59:59.000Z

    A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

  20. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-10-07T23:59:59.000Z

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5?nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  1. Dynamical scaling properties of nanoporous undoped and Sb-doped SnO{sub 2} supported thin films during tri- and bidimensional structure coarsening

    SciTech Connect (OSTI)

    Santilli, C. V.; Rizzato, A. P.; Pulcinelli, S. H.; Craievich, A. F. [Instituto de Quimica/UNESP, P.O. Box 355, Araraquara, Sao Paulo 14800-900 (Brazil); Instituto de Fisica/USP, P.O. Box 66318, Sao Paulo, Sao Paulo 05315-970, (Brazil)

    2007-05-15T23:59:59.000Z

    The coarsening of the nanoporous structure developed in undoped and 3% Sb-doped SnO{sub 2} sol-gel dip-coated films deposited on a mica substrate was studied by time-resolved small-angle x-ray scattering (SAXS) during in situ isothermal treatments at 450 and 650 deg. C. The time dependence of the structure function derived from the experimental SAXS data is in reasonable agreement with the predictions of the statistical theory of dynamical scaling, thus suggesting that the coarsening process in the studied nanoporous structures exhibits dynamical self-similar properties. The kinetic exponents of the power time dependence of the characteristic scaling length of undoped SnO{sub 2} and 3% Sb-doped SnO{sub 2} films are similar ({alpha}{approx_equal}0.09), this value being invariant with respect to the firing temperature. In the case of undoped SnO{sub 2} films, another kinetic exponent, {alpha}{sup '}, corresponding to the maximum of the structure function was determined to be approximately equal to three times the value of the exponent {alpha}, as expected for the random tridimensional coarsening process in the dynamical scaling regime. Instead, for 3% Sb-doped SnO{sub 2} films fired at 650 deg. C, we have determined that {alpha}{sup '}{approx_equal}2{alpha}, thus suggesting a bidimensional coarsening of the porous structure. The analyses of the dynamical scaling functions and their asymptotic behavior at high q (q being the modulus of the scattering vector) provided additional evidence for the two-dimensional features of the pore structure of 3% Sb-doped SnO{sub 2} films. The presented experimental results support the hypotheses of the validity of the dynamic scaling concept to describe the coarsening process in anisotropic nanoporous systems.

  2. Prediction of Ordering and Spontaneous Rotation of Epitaxial Habits in Substrate-Coherent InGaN and GaAsSb

    SciTech Connect (OSTI)

    Liu, J. Z.; Trimarchi, G.; Zunger, A.

    2009-01-01T23:59:59.000Z

    Coherently strained In{sub 0.5}Ga{sub 0.5}N on GaN and CaO substrates are theoretically predicted to show stable ordering in the chalcopyrite structure, as is Ga{sub 2}AsSb on GaAs and InP substrates. Depending on the substrate and the film concentration, we predict a spontaneous rotation of the stablest chalcopyrite film axis from perpendicular to parallel to the (001) substrate.

  3. SLUDGE BATCH 7 (SB7) WASHING DEMONSTRATION TO DETERMINE SULFATE/OXALATE REMOVAL EFFICIENCY AND SETTLING BEHAVIOR

    SciTech Connect (OSTI)

    Reboul, S.; Click, D.; Lambert, D.

    2010-12-10T23:59:59.000Z

    To support Sludge Batch 7 (SB7) washing, a demonstration of the proposed Tank Farm washing operation was performed utilizing a real-waste test slurry generated from Tank 4, 7, and 12 samples. The purpose of the demonstration was twofold: (1) to determine the settling time requirements and washing strategy needed to bring the SB7 slurry to the desired endpoint; and (2) to determine the impact of washing on the chemical and physical characteristics of the sludge, particularly those of sulfur content, oxalate content, and rheology. Seven wash cycles were conducted over a four month period to reduce the supernatant sodium concentration to approximately one molar. The long washing duration was due to the slow settling of the sludge and the limited compaction. Approximately 90% of the sulfur was removed through washing, and the vast majority of the sulfur was determined to be soluble from the start. In contrast, only about half of the oxalate was removed through washing, as most of the oxalate was initially insoluble and did not partition to the liquid phase until the latter washes. The final sulfur concentration was 0.45 wt% of the total solids, and the final oxalate concentration was 9,900 mg/kg slurry. More oxalate could have been removed through additional washing, although the washing would have reduced the supernatant sodium concentration.The yield stress of the final washed sludge (35 Pa) was an order of magnitude higher than that of the unwashed sludge ({approx}4 Pa) and was deemed potentially problematic. The high yield stress was related to the significant increase in insoluble solids that occurred ({approx}8 wt% to {approx}18 wt%) as soluble solids and water were removed from the slurry. Reduction of the insoluble solids concentration to {approx}14 wt% was needed to reduce the yield stress to an acceptable level. However, depending on the manner that the insoluble solids adjustment was performed, the final sodium concentration and extent of oxalate removal would be prone to change. As such, the strategy for completing the final wash cycle is integral to maintaining the proper balance of chemical and physical requirements.

  4. THE IMPACT OF A TANK 40H DECANT ON THE PROJECTED OPERATING WINDOWS FOR SB4 AND GLASS SELECTION STRATEGY IN SUPPORT OF THE VARIABILITY STUDY

    SciTech Connect (OSTI)

    Raszewski, F; Tommy Edwards, T; David Peeler, D

    2008-02-07T23:59:59.000Z

    The Liquid Waste Organization (LWO) has requested that the Savannah River National Laboratory (SRNL) to assess the impact of a 100K gallon decant volume from Tank 40H on the existing sludge-only Sludge Batch 4 (SB4)-Frit 510 flowsheet and the coupled operations flowsheet (SB4 with the Actinide Removal Process (ARP)). Another potential SB4 flowsheet modification of interest includes the addition of 3 wt% sodium (on a calcined oxide basis) to a decanted sludge-only or coupled operations flowsheet. These potential SB4 flowsheet modifications could result in significant compositional shifts to the SB4 system. This paper study provides an assessment of the impact of these compositional changes to the projected glass operating windows and to the variability study for the Frit 510-SB4 system. The influence of the compositional changes on melt rate was not assessed in this study nor was it requested. Nominal Stage paper study assessments were completed using the projected compositions for the various flowsheet options coupled with Frit 510 (i.e., variation was not applied to the sludge and frit compositions). In order to gain insight into the impacts of sludge variation and/or frit variation (due to the procurement specifications) on the projected operating windows, three versions of the Variation Stage assessment were performed: (1) the traditional Variation Stage assessment in which the nominal Frit 510 composition was coupled with the extreme vertices (EVs) of each sludge, (2) an assessment of the impact of possible frit variation (within the accepted frit specification tolerances) on each nominal SB4 option, and (3) an assessment of the impact of possible variation in the Frit 510 composition due to the vendor's acceptance specifications coupled with the EVs of each sludge case. The results of the Nominal Stage assessment indicate very little difference among the various flowsheet options. All of the flowsheets provide DWPF with the possibility of targeting waste loadings (WLs) from the low 30s to the low 40s with Frit 510. In general, the Tank 40H decant has a slight negative impact on the operating window, but DWPF still has the ability to target current WLs (34%) and higher WLs if needed. While the decant does not affect practical WL targets in DWPF, melt rate could be reduced due to the lower Na{sub 2}O content. If true, the addition of 3 wt% Na{sub 2}O to the glass system may regain melt rate, assuming that the source of alkali is independent of the impact on melt rate. Coupled operations with Frit 510 via the addition of ARP to the decanted SB4 flowsheet also appears to be viable based on the projected operating windows. The addition of both ARP and 3 wt% Na{sub 2}O to a decanted Tank 40H sludge may be problematic using Frit 510. Although the Nominal Stage assessments provide reasonable operating windows for the SB4 flowsheets being considered with Frit 510, introduction of potential sludge and/or frit compositional variation does have a negative impact. The magnitude of the impact on the projected operating windows is dependent on the specific flowsheet options as well as the applied variation. The results of the traditional Variation Stage assessments indicate that the three proposed Tank 40H decanted flowsheet options (Case No.2--100K gallon decant, Case No.3--100K gallon decant and 3 wt% Na{sub 2}O addition and Case No.4--100K gallon decant and ARP) demonstrate a relatively high degree of robustness to possible sludge variation over WLs of interest with Frit 510. However, the case where the addition of both ARP and 3 wt% Na{sub 2}O is considered was problematic during the traditional Variation Stage assessment. The impact of coupling the frit specifications with the nominal SB4 flowsheet options on the projected operating windows is highly dependent on whether the upper WLs are low viscosity or liquidus temperature limited in the Nominal Stage assessments. Systems that are liquidus temperature limited exhibit a high degree of robustness to the applied frit and sludge variation, while those that are low viscosity li

  5. Crystal structure of Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La, Pr and Nd): A new ordered rhombohedral pyrochlore

    SciTech Connect (OSTI)

    Fu, W.T., E-mail: w.fu@chem.leidenuniv.nl; IJdo, D.J.W.

    2014-05-01T23:59:59.000Z

    Manganese rare earth antimonates with the formula Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La–Yb and Y) have been prepared and their structures were determined by the Rietveld method using X-ray diffraction data. The compounds with Ln=La, Pr and Nd crystallize in a rhombohedral supercell of the cubic fluorite with the space group R3{sup Ż}m and with the lattice parameters a{sub h}??2a{sub c} and c{sub h}?2?3a{sub c}, where a{sub c} denotes the lattice constant of the cubic fluorite. The structure is pyrochlore-like but differs from the common cubic pyrochlore A{sub 2}B{sub 2}O{sub 7} in that it consists of fully ordered Mn:Ln in the A sites and Mn:Sb in the B sites with the ratio 1:3. The most interesting feature of Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} is that the divalent Mn ions have different coordination numbers with oxygen and the Mn(II)O{sub 6} (octahedron) and Mn(II)O{sub 8} (hexagonal bipyramid) alternate along the parent cubic fluorite axes. For medium sized lanthanides, i.e. from Ln=Sm, the rhombohedral phase coexists with the cubic phase and Mn{sub 2}Y{sub 3}Sb{sub 3}O{sub 14} is cubic a pyrochlore. - Graphical abstract: Crystal structure of rhombohedral pyrochlore Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La, Pr, and Nd) showing the staking of Ln{sub 3}Mn and MnSb{sub 3} layers (a). (b) and (c) show the connections between Mn1O{sub 6} and LnO{sub 8} and between Mn2O{sub 8} and SbO{sub 6} polyhedra, respectively. - Highlights: • Pyrochlores of the formula Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La–Yb and Y) were synthesized for the first time. • Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} with Ln=La, Pr, Nd are rhombohedral consisting of fully 1:3 ordering of metal ions. • With medium-sized Ln, rhombohedral phase co-exists with cubic phase. • Two divalent Mn ions have coordination numbers of 6 and 8, respectively.

  6. Structure and properties of Na{sub x}M{sub 2}SbO{sub 6}·yH{sub 2}O, M=Co(III), Ni(III) honeycomb oxyhydrates

    SciTech Connect (OSTI)

    Roudebush, J.H., E-mail: jhr@princeton.edu; Cava, R.J.

    2013-08-15T23:59:59.000Z

    The oxyhydrates Na{sub 0.85}Co{sub 2}SbO{sub 6}·1.7H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}·1.5H{sub 2}O were prepared by Br{sub 2} oxidation of Na{sub 3}Co{sub 2}SbO{sub 6} and Na{sub 3}Ni{sub 2}SbO{sub 6} and exposure to ambient air. Their composition and structure are characterized by thermogravimetric analysis, elemental analysis and powder X-ray diffraction. Both form monolayer hydrates with metal cations (Co or Ni) near the 3+ oxidation state. In the parent materials, MO{sub 6} octahedra surround SbO{sub 6} units, forming a honeycomb geometry; Rietveld refinement of the hydrate phases indicate that this motif is retained. Magnetic susceptibility plots display paramagnetic behavior and Curie–Weiss fits support the 3+ oxidation state (low spin d{sup 6}s=0 for Co and low spin d{sup 7}s=1/2 for Ni). Close inspection of the Ni hydrate’s susceptibility reveals a feature at 6.2 K and a non-linear magnetization at 2 K with no saturation up to 9 T. Heat capacity measurements show a large amount of excess entropy in the Ni hydrate in the 2–20 K temperature range, while the heat capacity of the Co hydrate can be described by a simple lattice contribution. The Ni hydrate sample is easily dehydrated by heating above 100 °C and forms a new Na-deficient phase, Na{sub 0.95}Ni{sub 2}SbO{sub 6}, which is stable at room temperature. Magnetic susceptibility of this phase is consistent with the Ni atom remaining in the 3+ oxidation state after dehydration. - Graphical abstract: Powder diffraction patterns of Na{sub 3}Ni{sub 2}SbO{sub 6}, Na{sub 0.95}Ni{sub 2}SbO{sub 6}·1.5H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}. Each pattern has been normalized in intensity. Cartoons depict the change in layer separation with hydration and give the approximate distances between layers and Ni atoms. Highlights: • New oxyhydrate phases with honeycomb lattices are formed. • Curie–Weiss fits indicate Ni{sup 3+} (s=1/2). • Heat capacity shows a large release of entropy for Ni phase, likely due to a complex magneto-structural phase transition.

  7. MECHANISMS OF PHASE FORMATION IN THE VITRIFICATION OF HIGH-FERROUS SAVANNAH RIVER SITE SB2 HLW SLUDGE SURROGATE - 9300

    SciTech Connect (OSTI)

    Marra, J

    2008-08-27T23:59:59.000Z

    Phase formation mechanisms associated with the vitrification of high-ferrous Savannah River Site (SRS) Sludge Batch 2 (SB2) high level waste surrogate were studied by infrared spectroscopy (IRS) and X-ray diffraction (XRD). Two mixtures at 50 wt% waste loading with commercially available Frit 320 (Li{sub 2}O - 8 wt %, B{sub 2}O{sub 3} - 8 wt %, Na{sub 2}O - 12 wt %, SiO{sub 2} - 72 wt %) and batch chemicals (LiOH {center_dot} H{sub 2}O, H{sub 3}BO{sub 3}, NaNO{sub 3}, SiO{sub 2}) to represent the frit formulation were prepared as slurries with a water content of {approx}50 wt%. The mixtures were air-dried at a temperature of 115 C and heat-treated at 500, 700, 900, 1000, 1100, 1200, and 1300 C for 1 hr at each temperature. Infrared spectra and XRD patterns of the products produced at each temperature were recorded. In both mixtures prepared using frit and batch chemicals to represent the frit, phase formation reactions were completed within the temperature range between 900 and 1000 C. However, residual quartz was still present in glass produced from the mixture with batch chemicals even at 1100 C. Although, the phase composition and structure of the glassy products obtained from both mixtures at temperatures over 1000 C were similar, the products obtained from the mixture using actual frit were more homogeneous than those from the mixture with batch chemicals. Thus, the use of frit rather than batch chemicals reduced the temperature range of phase formation and provided for production of higher quality glass.

  8. Constitutional Environment and Entrepreneurship: An Empirical Study

    E-Print Network [OSTI]

    Zhang, Wei

    2012-01-01T23:59:59.000Z

    Malta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia Netherlands

  9. Soil inorganic carbon storage pattern in China , S H A O Q I A N G WA N G *, J I Y U A N L I U *, G U I R U I Y U *, W E N J U A N Z H A N G *2

    E-Print Network [OSTI]

    Nacional de San Luis, Universidad

    Soil inorganic carbon storage pattern in China N A M I *1 , S H A O Q I A N G WA N G *, J I Y U A N San Luis, Argentina Abstract Soils with pedogenic carbonate cover about 30% (3.44 Â 106 km2 ) of China (1979­1992), total soil inorganic carbon (SIC) storage in China was estimated to be 53.3 Ć 6.3 PgC (1 Pg

  10. Efficient room temperature aqueous Sb2S3 synthesis for inorganic–organic sensitized solar cells with 5.1% efficiencies

    E-Print Network [OSTI]

    Gödel, Karl C.; Choi, Yong Chan; Roose, Bart; Sadhanala, Aditya; Snaith, Henry J.; Seok, Sang Il; Steiner, Ullrich; Pathak, Sandeep K.

    2015-04-14T23:59:59.000Z

    . Steiner and S. K. Pathak, Chem. Commun., 2015, DOI: 10.1039/C5CC01966D. Efficient room temperature aqueous Sb2S3 synthesis for inorganic-organic sensitized solar cells with 5.1% efficiencies† Karl C. Go¨del,a Yong Chan Choi,b Bart Roose,ac Aditya Sadhanala... -gu, Sungkyunkwan University, Suwon 440-746, Republic of Korea. Further, the material has been used to improve the stability of methyl-ammonium lead iodide perovskite solar cells.5 Antimony sulfide synthesis typically involves deposition in aqueous and non...

  11. Direct imaging of crystal structure and defects in metastable Ge{sub 2}Sb{sub 2}Te{sub 5} by quantitative aberration-corrected scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd [Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318 Leipzig (Germany)

    2014-03-24T23:59:59.000Z

    Knowledge about the atomic structure and vacancy distribution in phase change materials is of foremost importance in order to understand the underlying mechanism of fast reversible phase transformation. In this Letter, by combining state-of-the-art aberration-corrected scanning transmission electron microscopy with image simulations, we are able to map the local atomic structure and composition of a textured metastable Ge{sub 2}Sb{sub 2}Te{sub 5} thin film deposited by pulsed laser deposition with excellent spatial resolution. The atomic-resolution scanning transmission electron microscopy investigations display the heterogeneous defect structure of the Ge{sub 2}Sb{sub 2}Te{sub 5} phase. The obtained results are discussed. Highly oriented Ge{sub 2}Sb{sub 2}Te{sub 5} thin films appear to be a promising approach for further atomic-resolution investigations of the phase change behavior of this material class.

  12. Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

    E-Print Network [OSTI]

    Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

    2013-03-11T23:59:59.000Z

    High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  13. Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}

    SciTech Connect (OSTI)

    Guo Yun, E-mail: apharm@sina.com; Zhang Miao [Zhejiang University of Technology, College of Pharmaceutical Sciences (China); Shen Liang [Hangzhou Normal University, College of Material Chemistry and Chemical Engineering (China); Jin Yingying; Jin Zhimin [Zhejiang University of Technology, College of Pharmaceutical Sciences (China)

    2010-12-15T23:59:59.000Z

    The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

  14. The Biology and Conservation of the Damara Tern in Namibia

    E-Print Network [OSTI]

    de Villiers, Marienne

    Chapter 7 The impacts of diamond mining activities on breeding Damara Terns Sterna balaenarum in southern and faces several conservation issues. The aim of this study was to provide a description of the ecology

  15. MHK Projects/GPP Namibia | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther, Oklahoma: EnergyMARECInformation kW

  16. Namibia-UNEP Green Economy Advisory Services | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLu anMicrogreenMoonNASA/AmesNS Solar05Zip Category

  17. Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets

    SciTech Connect (OSTI)

    Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castańo, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

    2013-11-14T23:59:59.000Z

    This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

  18. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O?: Honeycomb-ordered cathodes for Na-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14T23:59:59.000Z

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na?/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O? can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both “disordered” and “ordered” forms, depending onmore »the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O? is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3?m, #166, a = b = 3.06253(3) Ĺ and c = 16.05192(7) Ĺ) and ordered variants (C2/m, #12, a = 5.30458(1) Ĺ, b = 9.18432(1) Ĺ, c = 5.62742(1) Ĺ and ? = 108.2797(2)°) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O? is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through ˛łNa solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence of conventional stacking faults. The lack of long range coherence is instead attributed to disorder among the three possible choices for distributing Ni and Sb cations into a honeycomb lattice in each transition metal layer. It is observed that the full theoretical discharge capacity expected for a Nił?/˛? redox couple (133 mAh/g) can be achieved for the ordered variant but not for the disordered variant (~110 mAh/g). The first 3.27 V plateau during charging is found to be associated with a two-phase O3 ? P3 structural transition, with the P3 stacking sequence persisting throughout all further stages of desodiation.« less

  19. 2 I E E E S o f t wa r E Pu b l i s h e d b y t h e I EEE C o m p u t e r S o c i e t y 0 74 0 -74 5 9 / 0 9 / $ 2 5 . 0 0 2 0 0 9 I E E E The bazaar has three major advantages over

    E-Print Network [OSTI]

    and Prosumers End-user development (EUD) aims to enable end users "at some point to create, modify, or extend engineering superscript #12;September/October 2009 I E E E S o f t wa r E 3 the bazaar: the prosumer. A prosumer serves as producer and consumer. If appropriate, the pro- sumer produces the goods he or she and

  20. Crystal structure and high temperature transport properties of Yb-filled p-type skutterudites Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}

    SciTech Connect (OSTI)

    Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Puneet, Pooja; Tritt, Terry M. [Department of Physics and Astronomy, Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States); Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States)

    2014-01-15T23:59:59.000Z

    Partially Yb-filled Fe substituted polycrystalline p-type skutterudites with nominal compositions Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}, with varying filler concentrations x, were synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot-pressing. The compositions and filling fractions were confirmed with a combination of Rietveld refinement and elemental analysis. Their thermoelectric properties were evaluated from 300 to 800 K. The Seebeck coefficients for the specimens increase with increasing temperature and plateau at around 750 K. The thermal conductivity decreases with increasing Yb filling fraction, and bipolar conduction becomes evident and increases at elevated temperatures. A maximum ZT value of 0.8 was obtained at 750 K for Yb{sub 0.47}Co{sub 2.6}Fe{sub 1.4}Sb{sub 12}. The thermoelectric properties and potential for further optimization are discussed in light of our results. - Graphical abstract: Display Omitted - Highlights: • Yb-filled Fe-substituted p-type CoSb{sub 3} skutterudites, Yb{sub x}Co{sub 2.5}Fe{sub 1.5}Sb{sub 12}, were structurally and physically characterized. • Both filling fraction and Co-to-Fe ratio affect the transport properties. • High ZT was obtained for the composition with ?50% Yb filling and a slightly lower than nominal Fe content.

  1. Inverter Eligibility Listing Procedure for Solar Electric Incentive Programs Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and inverters must be listed on

    E-Print Network [OSTI]

    (Maximum Continuous Output Power, Conversion Efficiency, and Tare Losses) and weighted inverter efficiencyInverter Eligibility Listing Procedure for Solar Electric Incentive Programs Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and inverters must be listed

  2. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part 1. GaAs and GaSb

    SciTech Connect (OSTI)

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-23T23:59:59.000Z

    The role of the inert gas additive (He, Ar, Xe) to C12 Inductively Coupled Plasmas for dry etching of GaAs and GaSb was examined through the effect on etch rate, surface roughness and near-surface stoichiometry. The etch rates for both materials go through a maximum with Clz 0/0 in each type of discharge (C12/'He, C12/Ar, C12/Xc), reflecting the need to have efficient ion-assisted resorption of the etch products. Etch yields initially increase strongly with source power as the chlorine neutral density increases, but decrease again at high powers as the etching becomes reactant-limited. The etched surfaces are generally smoother with Ax or Xe addition, and maintain their stoichiometry.

  3. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

    2014-08-25T23:59:59.000Z

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  4. Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

    SciTech Connect (OSTI)

    Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

    2014-01-01T23:59:59.000Z

    The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

  5. Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate

    SciTech Connect (OSTI)

    Chang, Chia-Hao; Li, Zong-Lin; Pan, Chien-Hung; Lu, Hong-Ting; Lee, Chien-Ping; Lin, Sheng-Di, E-mail: sdlin@mail.nctu.edu.tw [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

    2014-02-14T23:59:59.000Z

    We have demonstrated experimentally the InP-based “M”-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41??m at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234?W/cm{sup 2} and 20.5?cm{sup ?1}, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of “M”-type QW laser was superior to the inverse “W”-type one due to its thinner barrier for holes. Further improvement of the “M”-type QW structure could lead to a cost-effective mid-infrared light source.

  6. art Phones ha versity of Wa

    E-Print Network [OSTI]

    Queitsch, Christine

    nts a potentia ed smart pho icer (CISO) e secure the sm ss code or PI e or PIN with one to lock au of the CISO bile work force d to importa ty application y, integrity, an y business, th er the followin ccess

  7. EIS-0346: Salmon Creek Project, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's proposal to fund activities that would restore sufficient water flows to Salmon Creek and rehabilitate its streambed as necessary to provide adequate passage for summer steelhead (Oncorhynchus mykiss) and possibly spring chinook (O. tshawytscha).

  8. Sumas, WA LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    12,530 7,769 9,768 6,016 10,409 3,547 1996-2014 Pipeline Prices 5.55 4.81 4.47 3.87 4.02 5.05 1996...

  9. 212 Union Ave, SE Olympia, WA 98501

    E-Print Network [OSTI]

    , the nation, and nations around the world begin to document and seek to reduce the amount of greenhouse gas Plan base case scenario, Northwest sources are expected to emit 71 million tons by 2024. An important

  10. Sumas, WA Natural Gas Exports to Canada

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial ConsumersThousand CubicCubicIndiaFeet)6Feet)3Year12,530 7,769

  11. Classroom Vocabulary Classroom Vocabulary [msamiati wa darasani

    E-Print Network [OSTI]

    ] [wall clock] [map / maps] [air conditioner / air conditioners] [picture / pictures] [drawing / drawings

  12. WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS

    Broader source: Energy.gov (indexed) [DOE]

    to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time;...

  13. Category:Seattle, WA | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:Power LPInformationCashtonGo BackLocation Media in categorySRMLWA

  14. Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds

    SciTech Connect (OSTI)

    Seo, J.; Park, K.; Lee, C.; Kim, J.

    1997-07-01T23:59:59.000Z

    The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

  15. Temperature-Dependent Young's modulus, shear modulus and Poisson's ratio of p-type Ce0.9Fe3.5Co0.5Sb12 and n-type Co0.95Pd0.05Te0.05Sb3 Skutterudite Thermoelectric Materials

    SciTech Connect (OSTI)

    Schmidt, Robert [Michigan State University, East Lansing; Case, Eldon D [Michigan State University, East Lansing; Ni, Jennifer E. [Michigan State University, East Lansing; Trejo, Rosa M [ORNL; Lara-Curzio, Edgar [ORNL

    2012-01-01T23:59:59.000Z

    Effective models of the mechanical behavior of thermoelectric materials under device conditions require knowledge of the temperature-dependent elastic properties.Between room temperature and 600 K, Resonant Ultrasound Spectroscopy (RUS) measurements of the Young s and shear moduli of three skutterudite thermoelectric materials, n-type Co0.95Pd0.05Te0.05Sb3(both with and without 0.1 atomic % cerium dopant) and p-type Ce0.9Fe3.5Co0.5Sb12, decreased linearly with temperature at a rate between -0.011 GPa/K and -0.013 GPa/K. In contrast the Poisson s ratio was approximately 0.22 for the three materials and was relatively insensitive to temperature.For temperatures > 600 K, the elastic moduli decreased more rapidly and resonance peaks broadened indicating the onset of viscoelastic behavior.The viscoelastic relaxation of the moduli was least for Ce-doped n-type material, for which grain boundary precipitates may inhibit grain boundary sliding which in turn has important implications concerning creep resistance. In addition, powder processing of the n- and p-type materials should be done cautiously since submicron-sized powders of both the n- and p-type powders were pyrophoric

  16. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1?x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect (OSTI)

    Singh, Mukhtiyar, E-mail: msphysik09@gmail.com; Thakur, Jyoti; Kashyap, Manish K. [Department of Physics, Kurukshetra University, Kurukshetra - 136119, Haryana (India); Saini, Hardev S. [Department of Physics, National Institute of Technology, Kurukshetra - 136119, Haryana (India)

    2014-04-24T23:59:59.000Z

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1?x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  17. A high-pressure route to thermoelectrics with low thermal conductivity: The solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1–0.6)

    SciTech Connect (OSTI)

    Schröder, Thorsten; Rosenthal, Tobias; Souchay, Daniel; Petermayer, Christian; Grott, Sebastian [LMU Munich, Department of Chemistry, Butenandtstraße 5-13 (D), 81377 Munich (Germany); Scheidt, Ernst-Wilhelm; Gold, Christian; Scherer, Wolfgang [University of Augsburg, Institut für Physik, Universitätsstraße 1, 86159 Augsburg (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Leipzig University, IMKM, Scharnhorststraße 20, 04275 Leipzig (Germany)

    2013-10-15T23:59:59.000Z

    Metastable rocksalt-type phases of the solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1, 0.2, 0.4, 0.5 and 0.6) were prepared by high-pressure synthesis at 2.5 GPa and 400 °C. In these structures, the coordination number of In{sup 3+} is six, in contrast to chalcopyrite ambient-pressure AgInTe{sub 2} with fourfold In{sup 3+} coordination. Transmission electron microscopy shows that real-structure phenomena and a certain degree of short-range order are present, yet not very pronounced. All three cations are statistically disordered. The high degree of disorder is probably the reason why AgIn{sub x}Sb{sub 1?x}Te{sub 2} samples with 0.4SbTe{sub 2} (? ?0.6 W/K m). The highest ZT value (0.15 at 300 K) is observed for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, mainly due to its high Seebeck coefficient of 160 µV/K. Temperature-dependent X-ray powder patterns indicate that the solid solutions are metastable at ambient pressure. At 150 °C, the quaternary compounds decompose into chalcopyrite-type AgInTe{sub 2} and rocksalt-type AgSbTe{sub 2}. - Graphical abstract: Reaction scheme, temperature characteristics of the ZT value and a selected-area electron diffraction pattern (background) of AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, which crystallizes in a rocksalt-type structure with statistical cation disorder. Display Omitted - Highlights: • High-pressure synthesis yields the novel solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2}. • In contrast to AgInTe{sub 2}, the compounds are inert at ambient pressure. • HRTEM shows no pronounced short-range order in the disordered NaCl-type structure. • The metastable phases exhibit very low total thermal conductivities <0.5 W/K m. • ZT values of 0.15 at room temperature were measured for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}.

  18. Type B epitaxy of Ge on CaF2(111) surface T.-L. Chan , C. Gaire, T.-M. Lu, G.-C. Wang, S.B. Zhang

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Type B epitaxy of Ge on CaF2(111) surface T.-L. Chan , C. Gaire, T.-M. Lu, G.-C. Wang, S.B. Zhang is rotated 180° about the [111] axis, dominated the heteroepitaxial growth of Ge(111) on a CaF2 theory to determine the energetics of the Ge(111)/CaF2(111) interface and found that the type B

  19. Synthesis, characterization and physical properties of the skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Vaqueiro, Paz [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)] [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Knight, Kevin S. [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom)] [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom); Powell, Anthony V., E-mail: a.v.powell@hw.ac.uk [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2012-09-15T23:59:59.000Z

    The skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im3{sup Macron} (a Almost-Equal-To 9.1 A) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe{sub 2}Ni{sub 2}Sb{sub 12} confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2{<=}T/K{<=}300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis. - Graphical abstract: The filled skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The thermoelectric performance depends strongly on the Yb content. The physical properties and thermal stability of the compounds are further discussed in comparison with the current state-of-the art thermoelectric skutterudites. Highlights: Black-Right-Pointing-Pointer A new series of skutterudites has been prepared and characterised. Black-Right-Pointing-Pointer Physical properties are affected by the degree of Yb filling. Black-Right-Pointing-Pointer The highest thermoelectric performance is found for Yb{sub 0.15}Fe{sub 2}Ni{sub 2}Sb{sub 12}. Black-Right-Pointing-Pointer The skutterudites decompose in air above 550 K.

  20. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

    2011-04-01T23:59:59.000Z

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  1. Imaging dirac-mass disorder from magnetic dopant-atoms in the ferromagnetic topological insulator Crx(Bi?.?Sb?.?)??xTe?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Inhee [Brookhaven National Lab. (BNL), Upton, NY (United States); Kim, Chung Koo [Brookhaven National Lab. (BNL), Upton, NY (United States); Lee, Jinho [Brookhaven National Lab. (BNL), Upton, NY (United States); Seoul National Univ., Seoul (Korea); Billinge, Simon J. L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States); Zhong, Ruidan D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States); Schneeloch, John A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States); Liu, Tiansheng S. [Brookhaven National Lab. (BNL), Upton, NY (United States); North Univ. of China, Shanxi (China); Valla, Tonica [Brookhaven National Lab. (BNL), Upton, NY (United States); Tranquada, John M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gu, Genda [Brookhaven National Lab. (BNL), Upton, NY (United States); Davis, J. C. Seamus [Brookhaven National Lab. (BNL), Upton, NY (United States); Cornell Univ., Ithaca, NY (United States); Univ. of St. Andrews, Fife (Scotland)

    2015-02-03T23:59:59.000Z

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr?.??(Bi?.?Sb?.?)?.??Te?. Simultaneous visualization of the Dirac-mass gap ?(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of ?(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship ?(r)?n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm˛. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  2. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  3. Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films

    SciTech Connect (OSTI)

    Secor, Jeff; Zhao, Lukas; Krusin-Elbaum, Lia [The Graduate Center, CUNY, New York, New York 10016 (United States); Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Harris, Matt A.; Deng, Haiming [Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); Raoux, Simone [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2014-06-02T23:59:59.000Z

    A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q?=?0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.

  4. Assessment of RELAP5/MOD3.1 with the LSTF SB-SG-06 experiment simulating a steam generator tube rupture transient

    SciTech Connect (OSTI)

    Seul, K.W.; Bang, Y.S.; Lee, S.; Kim, H.J. [Korea Inst. of Nuclear Safety, Taejon (Korea, Republic of)

    1996-09-01T23:59:59.000Z

    The objective of the present work is to identify the predictability of RELAP5/MOD3.1 regarding thermal-hydraulic behavior during a steam generator tube rupture (SGTR). To evaluate the computed results, LSTF SB-SG-06 test data simulating the SGTR that occurred at the Mihama Unit 2 in 1991 are used. Also, some sensitivity studies of the code change in RELAP5, the break simulation model, and the break valve discharge coefficient are performed. The calculation results indicate that the RELAP5/MOD3.1 code predicted well the sequence of events and the major phenomena during the transient, such as the asymmetric loop behavior, reactor coolant system (RCS) cooldown and heat transfer by natural circulation, the primary and secondary system depressurization by the pressurizer auxiliary spray and the steam dump using the intact loop steam generator (SG) relief valve, and so on. However, there are some differences from the experimental data in the number of the relief valve cycling in the affected SG, and the flow regime of the hot leg with the pressurizer, and the break flow rates. Finally, the calculation also indicates that the coolant in the core could remain in a subcooled state as a result of the heat transfer caused by the natural circulation flow even if the reactor coolant pumps (RCPs) turned off and that the affected SG could be properly isolated to minimize the radiological release after the SGTR.

  5. Imaging dirac-mass disorder from magnetic dopant-atoms in the ferromagnetic topological insulator Crx(Bi?.?Sb?.?)??xTe?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J. L.; Zhong, Ruidan D.; Schneeloch, John A.; Liu, Tiansheng S.; Valla, Tonica; Tranquada, John M.; Gu, Genda; et al

    2015-02-03T23:59:59.000Z

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in themore »ferromagnetic TI Cr?.??(Bi?.?Sb?.?)?.??Te?. Simultaneous visualization of the Dirac-mass gap ?(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of ?(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship ?(r)?n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm˛. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.« less

  6. Relativistic Jahn-Teller effects in the photoelectron spectra of tetrahedral P{sub 4}, As{sub 4}, Sb{sub 4}, and Bi{sub 4}

    SciTech Connect (OSTI)

    Opalka, Daniel; Domcke, Wolfgang [Department of Chemistry, Technische Universitaet Muenchen, D-85747 Garching (Germany); Poluyanov, Leonid V. [Institute of Chemical Physics, Academy of Sciences, Chernogolovka, Moscow 142432 (Russian Federation)

    2011-09-14T23:59:59.000Z

    The group-V tetrahedral cluster cations P{sub 4}{sup +}, As{sub 4}{sup +}, Sb{sub 4}{sup +}, and Bi{sub 4}{sup +} are known to exhibit exceptionally strong Jahn-Teller (JT) effects of electrostatic origin in their {sup 2}E ground states and {sup 2}T{sub 2} excited states. It has been predicted that there exist, in addition, JT couplings of relativistic origin (arising from the spin-orbit (SO) operator) in {sup 2}E and {sup 2}T{sub 2} states of tetrahedral systems, which should become relevant for the heavier elements. In the present work, the JT and SO couplings in the group-V tetramer cations have been analyzed with ab initio relativistic electronic structure calculations. The vibronic line spectra and the band shapes of the photoelectron spectra were simulated with time-dependent quantum wave-packet methods. The results provide insight into the interplay of electrostatic and relativistic JT couplings and SO splittings in the complex photoelectron spectra of these systems.

  7. RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk...

    Broader source: Energy.gov (indexed) [DOE]

    A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such...

  8. RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI...

    Broader source: Energy.gov (indexed) [DOE]

    A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such...

  9. Thermoelectric performance of nanostructured p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 1?x}Sn{sub x} half-Heusler alloys

    SciTech Connect (OSTI)

    Maji, Pramathesh; Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2013-06-15T23:59:59.000Z

    Several compositions of the p-type half-Heusler alloys Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 1?x}Sn{sub x} (0?x?0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 1?x}Sn{sub x} alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 1?x}Sn{sub x}/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 ?W/K{sup 2} m at 775 K) and the lowest lattice thermal conductivity (?2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 0.99}Sn{sub 0.01} bulk matrix. - Graphical abstract: CoSb nanoinclusions embedded into a p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 0.4}Rh{sub 0.6}Sb{sub 1?x}Sn{sub x} half-Heusler matrix simultaneously boost the thermopower and carrier mobility leading to a drastic enhancement of the power factor of the resulting bulk nanostructured materials. - Highlights: • The phase composition of half-Heusler (HH) alloy is very sensitive to the synthesis method. • Mechanical alloying (MA) of elements results in bulk HH matrix with CoSb inclusions. • CoSb nanoinclusions simultaneously boost the thermopower and carrier mobility with the HH matrix. • The MA process reduces lattice thermal conductivity due to high density of grain boundaries.

  10. DEMONSTRATION OF THE DWPF FLOWSHEET IN THE SRNL SHIELDED CELLS USING ARP PRODUCT SIMULANT AND SB4 TANK 40 SLUDGE SLURRY

    SciTech Connect (OSTI)

    Lambert, D; John Pareizs, J; Bradley Pickenheim, B; Cj Bannochie, C; Michael Stone, M; Damon Click, D; Erich Hansen, E; Kim Crapse, K; David Hobbs, D

    2008-05-14T23:59:59.000Z

    The radioactive startup of two new SRS processing facilities, the Actinide Removal Process (ARP) and the Modular Caustic-Side-Solvent-Extraction Unit (MCU) will add two new waste streams to the Defense Waste Processing Facility (DWPF). The ARP will remove actinides from the 5.6 M salt solution resulting in a sludge-like product that is roughly half monosodium titanate (MST) insoluble solids and half sludge insoluble solids. The ARP product will be added to the Sludge Receipt and Adjustment Tank (SRAT) at boiling and dewatered prior to pulling a SRAT receipt sample. The cesium rich MCU stream will be added to the SRAT at boiling after both formic and nitric acid have been added and the SRAT contents concentrated to the appropriate endpoint. A concern was raised by an external hydrogen review panel that the actinide loaded MST could act as a catalyst for hydrogen generation (Mar 15, 2007 report, Recommendation 9). Hydrogen generation, and it's potential to form a flammable mixture in the off-gas, under SRAT and Slurry Mix Evaporator (SME) processing conditions has been a concern since the discovery that noble metals catalyze the decomposition of formic acid. Radiolysis of water also generates hydrogen, but the radiolysis rate is orders of magnitude lower than the noble metal catalyzed generation. As a result of the concern raised by the external hydrogen review panel, hydrogen generation was a prime consideration in this experiment. Testing was designed to determine whether the presence of the irradiated ARP simulant containing MST caused uncontrolled or unexpected hydrogen production during experiments simulating the DWPF Chemical Process Cell (CPC) due to activation of titanium. A Shielded Cells experiment, SC-5, was completed using SB4 sludge from Tank 405 combined with an ARP product produced from simulants by SRNL researchers. The blend of sludge and MST was designed to be prototypic of planned DWPF SRAT and SME cycles. As glass quality was not an objective in this experiment, no vitrification of the SME product was completed. The results from this experiment were compared to the results from experiment SC-1, a similar experiment with SB4 sludge without added ARP product. This report documents: (1) The preparation and subsequent composition of the ARP product. (2) The preparation and subsequent compositional characterization of the SRAT Receipt sample. Additional details will be presented concerning the noble metal concentration of the ARP product and the SRAT receipt sample. Also, calculations related to the amount of formic and nitric acid added during SRAT processing will be presented as excess formic acid will lead to additional hydrogen generation. (3) Highlights from processing during the SRAT cycle and SME cycle (CPC processing). Hydrogen generation will be discussed since this was the prime objective for this experiment. (4) A comparison of CPC processing between SC-1 (without ARP simulant) and SC-5. This work was controlled by a Task Technical and Quality Assurance Plan (TTQAP)6, and analyses were guided by an Analytical Sample Support Matrix (ASSM)7. This Research and Development (R&D) was completed to support operation of DWPF.

  11. Thermoelectric properties of composites made of Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6} and fullerene

    SciTech Connect (OSTI)

    Nandihalli, Nagaraj [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Lahwal, Ali; Thompson, Daniel; Holgate, Tim C.; Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, SC, USA 29634 (United States); Dassylva-Raymond, Véronique; Kiss, László I. [Département des sciences appliqués, Université du Québec ŕ Chicoutimi, Chicoutimi, QC, Canada G7H 2B1 (Canada); Sellier, Elisabeth [CREMEM, Université de Bordeaux, F-33405 Talence (France); Gorsse, Stéphane [CNRS, Universite de Bordeaux, ICMCB, F-33600 Pessac (France); Kleinke, Holger, E-mail: kleinke@uwaterloo.ca [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

    2013-07-15T23:59:59.000Z

    About 18 g of Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6} were prepared by heating the elements in the stoichiometric ratio at 1000 K. The product was divided into four parts, and then C{sub 60} was added to three of these four parts at 1, 2, and 3 mass%, respectively. Each part was hot-pressed at 150 MPa and 923 K. The sample with 1% C{sub 60} was characterized via a Rietveld refinement and TEM analyses. Measurements of the three thermoelectric key properties revealed that the Seebeck coefficient barely depends on the carbon amount added, while both the electrical and the thermal conductivity decrease with increasing amount of carbon. Depending on the amount of C{sub 60} used and on the temperature, the thermoelectric performance was either enhanced or decreased, depending on whether the electrical conductivity decreased less or more than the thermal conductivity. At the highest temperature measured, all carbon-containing samples performed better than the unmodified bulk sample, namely up to 14%. These improvements are within the error margin, however. - Graphical abstract: Figure-of-merit of various Ni{sub 0.05}Mo{sub 3}Sb{sub 5.4}Te{sub 1.6}/C composites. - Highlights: • Composites of Mo{sub 3}(Sb,Te){sub 7} materials with C{sub 60} were synthesized and characterized. • The carbon additions form amorphous nanoparticles with sizes of the order of 50 nm. • The Seebeck effect remains basically unaffected from the carbon additions. • Electrical and thermal conductivity decrease differently with increasing carbon content. • The figure-of-merit was slightly improved, most noteworthy at higher temperatures.

  12. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect (OSTI)

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-17T23:59:59.000Z

    The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

  13. Structural, electrical, and thermoelectrical properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} alloys prepared by a conventional melting technique

    SciTech Connect (OSTI)

    Shokr, E. Kh.; Ibrahim, E. M. M., E-mail: e.ibrahim@science.sohag.edu.eg; Abdel Hakeem, A. M.; Adam, A. M. [Sohag University, Physics Department, Faculty of Science (Egypt)] [Sohag University, Physics Department, Faculty of Science (Egypt)

    2013-01-15T23:59:59.000Z

    Polycrystalline solid solutions of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} (x = 0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi{sub 2}Se{sub 3} in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100-420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x = 0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 {mu}W K{sup -2} cm{sup -1} and recorded for the x = 0.05 compound.

  14. DATA PACKET FOR THE FRIT 202-A11 SB3 GLASS SYSTEM A CANDIDATE FOR THE COLD CRUCIBLE INDUCTION MELTER DEMONSTRATION

    SciTech Connect (OSTI)

    Peeler, D; Kevin Fox, K; Tommy Edwards, T; David Best, D; Irene Reamer, I; Phyllis Workman, P

    2007-06-13T23:59:59.000Z

    A demonstration of the Cold Crucible Induction Melter (CCIM) technology is currently planned for the fall of 2007 to assess the potential for attaining higher waste throughputs as compared to joule heated melter technology. The CCIM demonstrations will be based on a Defense Waste Processing Facility (DWPF) waste slurry feed surrogate with a nominal operating temperature of approximately 1250 C (higher temperatures may be used). The waste slurry feed (nominally 45-50 weight percent solids) surrogate will be representative of Sludge Batch 3 (SB3) in order to allow a direct comparison to the DWPF joule heated melter performance during processing of this sludge waste. This pilot scale demonstration is being conducted to evaluate performance and to identify potential processing issues with the existing CCIM technology, and it will include characterization of the resultant glass product to ensure current product performance (durability) specifications are met. The information presented in this data packet provides a technical basis from which decisions regarding the melter demonstration can be made. More specifically, the results presented in this report provide technical data on the impact of waste loading (WL) on critical properties of interest--in particular, durability, liquidus temperature, and viscosity. All of the glasses of this study, regardless of heat treatment, were acceptable when their durabilities were compared to those of the Environmental Assessment (EA) glass. In general, as WL increases, the durabilities for the quenched versions of the glasses tend to decrease due to the changing composition of the glass. For the glasses subjected to the canister centerline cooling (ccc) regime, the durability response appears to be more non-linear as WL increases. At WLs less than 50%, X-ray diffraction (XRD) analysis indicates the potential for the presence of aegirine and/or nepheline crystalline phases, and when these phases are present, there is a decrease in the durability of the glass. As WL is increased above 50%, there is a transition from the aegirine and/or nepheline phases to a spinel phase field leading to more durable glasses. The results for durability suggest that WLs of 50% or greater should be targeted for the CCIM demonstration, thus, avoiding the potential for the formation of aegirine and/or nepheline. However, if decisions to target WLs of 50% or greater are made, liquidus temperature (T{sub L}) measurements indicate that there could be some degree of crystallization within the melter if a nominal 1250 C temperature is used. It is also anticipated that increasing WLs will lead to higher T{sub L}'s. Specifically, the T{sub L} of the 50% WL glass (HTLG-21) was measured to be slightly above 1250 C. To minimize the potential of crystallization during processing, higher melt temperatures could be targeted which not only could allow for higher WLs to be obtained but will also result in a reduction in viscosity, which in itself could pose certain processing issues (the ability to control the pour and the possibility of increased volatility). The viscosity of the 50% WL glass at 1250 and 1300 C was measured to be 20 and 13 Poise, respectively. Thus, a balance between processing and product performance issues may be required for the initial CCIM demonstrations since the frit development efforts to date were not necessarily intended to optimize this glass system nor have these efforts accounted for the variation from the intended target that is likely to occur in the composition of the waste slurry feed surrogate that is being used in the study.

  15. The influence of semiconductive binary Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} system on electrical conductivity property of epoxy composites

    SciTech Connect (OSTI)

    Soydal, Ulku, E-mail: usoydal@selcuk.edu.tr; Ahmetli, Gulnare, E-mail: usoydal@selcuk.edu.tr; Kocaman, Suheyla, E-mail: usoydal@selcuk.edu.tr [Department of Chemical Engineering, Faculty of Engineering, Selcuk University, 42031 Konya (Turkey)

    2014-05-15T23:59:59.000Z

    The purpose of this study is to develop the semiconductive composites. Semiconducting glass (SG) binary system Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} in mole ratio 1:1 was synthesized and was doped with I{sub 2}. Next, electrically conductive DGEBA-type epoxy resin (ER)/SG-filled composites and epoxy toluene oligomer (ETO) modified epoxy resin-SG filled composites were developed with 3–10 wt. % of fillers and characterized. As a result, the effects of the modifier and amount of semiconductive filler on the electrical properties of commercial epoxy resin were examined. Percolation concentration was 7 wt. % for all composites. For the SG-reinforced composites, the dispersion of the fillers is investigated by X-ray diffraction (XRD) and by scanning electron microscopy (SEM)

  16. Ge L{sub 3}-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Mitrofanov, K. V. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Kolobov, A. V., E-mail: a.kolobov@aist.go.jp; Fons, P. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan and Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Wang, X.; Tominaga, J. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Tamenori, Y.; Uruga, T. [Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Ciocchini, N.; Ielmini, D. [DEIB - Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

    2014-05-07T23:59:59.000Z

    A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change alloys, such as Ge{sub 2}Sb{sub 2}Te{sub 5}, known as drift, is a serious technological issue for application of phase-change memory. While it has been proposed that drift is related to structural relaxation, no direct structural results have been reported so far. Here, we report the results of Ge L{sub 3}-edge x-ray absorption measurements that suggest that the drift in electrical conductivity is associated with the gradual conversion of tetrahedrally coordinated Ge sites into pyramidal sites, while the system still remains in the amorphous phase. Based on electronic configuration arguments, we propose that during this process, which is governed by the existence of lone-pair electrons, the concentration of free carriers in the system decreases resulting in an increase in resistance despite the structural relaxation towards the crystalline phase.

  17. Ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using single-shot imaging spectroscopy

    SciTech Connect (OSTI)

    Takeda, Jun, E-mail: jun@ynu.ac.jp; Oba, Wataru; Minami, Yasuo; Katayama, Ikufumi [Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501 (Japan); Saiki, Toshiharu [Graduate School of Science and Technology, Keio University, Yokohama 223-8522 (Japan)

    2014-06-30T23:59:59.000Z

    We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using broadband single-shot imaging spectroscopy. The absorbance change that accompanied the ultrafast amorphization was measured via single-shot detection even for laser fluences above the critical value, where a permanent amorphized mark was formed. The observed rise time to reach the amorphization was found to be ?130–200 fs, which was in good agreement with the half period of the A{sub 1} phonon frequency in the octahedral GeTe{sub 6} structure. This result strongly suggests that the ultrafast amorphization can be attributed to the rearrangement of Ge atoms from an octahedral structure to a tetrahedral structure. Finally, based on the dependence of the absorbance change on the laser fluence, the stability of the photoinduced amorphous phase is discussed.

  18. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    SciTech Connect (OSTI)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)] [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States) [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China)] [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)] [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China) [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States) [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2013-07-15T23:59:59.000Z

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  19. Advance Patent Waiver W(A)2010-049

    Broader source: Energy.gov [DOE]

    This is a request by PRAXAIR, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43088

  20. Advance Patent Waiver W(A)2010-055

    Broader source: Energy.gov [DOE]

    This is a request by SUN POWER CORPORATIO for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002066

  1. EIS-0325: Schultz-Hanford Area Transmission Line Project, WA

    Broader source: Energy.gov [DOE]

    BPA proposes to construct a new 500-kilovolt (kV) transmission line in central Washington. This project would increase transmission system capacity north of Hanford.

  2. Advance Patent Waiver W(A)2013-019

    Broader source: Energy.gov [DOE]

    This is a request by CREE, INC. for a DOE waiver of domestic and foreign patent rights under agreement NGB-3-23028-01.

  3. Advance Patent Waiver W(A)2011-050

    Broader source: Energy.gov [DOE]

    This is a request by EMERSON ELECTRIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004000.

  4. Transit-Oriented Communities: a Blueprint for Bellingham, WA.

    E-Print Network [OSTI]

    Zaferatos, Nicholas C.

    to plan implementation), Sustainable Design Studio (exploring green building technologies and environmental challenges we currently face--including climate change, air quality concerns, water scarcity, food of the participating classes further build upon the planning concepts developed in planning studio. The program

  5. Advance Patent Waiver W(A)2008-031

    Broader source: Energy.gov [DOE]

    This is a request by Novozymes North America for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43084

  6. Advance Patent Waiver W(A)2008-042

    Broader source: Energy.gov [DOE]

    This is a request by Novozymes Inc. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-0BG01BOBO

  7. Advance Patent Waiver W(A)2012-002

    Broader source: Energy.gov [DOE]

    This is a request by NOVOZYMES NORTH AMERICA, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007741.

  8. Advance Patent Waiver W(A)2012-024

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005493.

  9. Gaseous Detonation-Driven Fracture of Tubes Tong Wa Chao

    E-Print Network [OSTI]

    never asked for anything back. First is Professor Wolfgang Knauss, who guided me in the solid to be consistent with fracture under mixed-mode loading. High-speed movies of the fracture events and blast wave

  10. Issaquah Highlands Zero Energy Affordable Housing (WA) - YWCA

    SciTech Connect (OSTI)

    Tom, Vincent; DeRobbio, Wendy; Hall, Linda

    2012-04-30T23:59:59.000Z

    The YWCA Family Village at Issaquah, Net Zero Energy Approach Project provides a compelling model for how the nation can seriously respond to the critical need for affordable housing while advancing environmental standards and reducing economic inequities. Affordable housing developments for vulnerable members of the community and in today's workforce cannot overlook issues, such as climate impact, energy security and water conservation. This project's advanced building design was based on the goal of creating a 100 year building that could achieve net zero energy usage if funding had been available to support the final pieces of energy generation. The team worked closely with community stakeholders to ensure the baseline components of high quality and efficient building envelopes along with efficient systems were in place to set the stage for future incorporation of energy generating systems such as solar panels. As built, these 146 homes, large child care center and community services areas are proving the value of investing upfront for the benefit of future generations by reducing ongoing utility and maintenance costs with an eye toward environmental stewardship and community/resident education. The DOE award helped fund two critical energy conservation features for the YWCA Family Village at Issaquah campus: 1) super-insulated roof assembly with a continuous air barrier and 2) domestic hot water preheat system. The roof system at the YWCA Family Village at Issaquah project was built to include 6" of Polyiso rigid insulation (R-38) on top of the roof sheathing to provide a super-insulated roof in line with the other green features of the project. Placing the rigid insulation on top of the roof sheathing allows the building to have a continuous layer of insulation and provides a continuous air barrier. The domestic hot water preheat system includes flat panel arrays on roofs of the buildings that heat the water using solar power, which reduces the amount of heating needed from the gas-fired boilers. The flat-plate panels on the roof of the building heats the water using solar power. A heat exchanger transfers heat from water warmed by the panels to potable water for the units. The warmed potable water mixes with the tap water supply to create hot water for the buildings. This boost of water warmed by the solar panels reduces the heating costs for eh project by reducing the need to heat the water via gas-fired boilers. Both of these energy upgrades were chosen because they significantly improve the energy efficiency for the life of the building and are reducing monthly utility costs for both the residents and the owners. Since the owner is a not-for-profit dedicated to long-term ownership and serving households with very-low and low-incomes, the costs savings will ultimately benefit current and future residents as the dollars saved will either be realized directly by the resident or be invested in the project. Technically, the design of these systems is easily understood and the principles could be applied to other projects. The incremental costs depend largely on the existing market rate of the components-none of which are considered "cutting edge" so a market does currently exist.

  11. Advance Patent Waiver W(A)2005-004

    Broader source: Energy.gov [DOE]

    This is a request by ALSTO for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-03NT41986.

  12. Advance Patent Waiver W(A)2011-048

    Broader source: Energy.gov [DOE]

    This is a request by ADA-ES for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004343.

  13. Advance Patent Waiver W(A)2013-015

    Broader source: Energy.gov [DOE]

    This is a request by Caterpillar Inc for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005980.

  14. Advance Patent Waiver W(A)2013-027

    Broader source: Energy.gov [DOE]

    This is a request by ELECTRICORE INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005968

  15. Advance Patent Waiver W(A)2013-018

    Broader source: Energy.gov [DOE]

    This is a request by General Motors, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006082.

  16. [Interview]: Alexandre Shvartsburg, Pacific Northwest National Laboratory, Richland, WA, USA

    SciTech Connect (OSTI)

    Shvartsburg, Alexandre A.

    2012-12-01T23:59:59.000Z

    Q1. What are your main research activities in ion mobility mass spectrometry (past or present)? My early efforts focused on the structural characterization of atomic (carbon and semiconductor) clusters. After the production of bulk fullerenes, many hoped that other nanoclusters discovered in the gas phase could also coalesce into new materials. As these studies required accurate and robust mobility calculations for any ion geometry, I strived to build the needed theory and implement it in the Mobcal software widely employed today. Since 2004, I have been developing methods and novel applications of differential IMS (FAIMS) at PNNL. The principal achievement has been raising the resolving power by over tenfold (up to ~400 for multiply-charged peptides) using elevated fields, helium and hydrogen-rich buffers, and extended filtering times. This performance broadly allows previously unthinkable separations of very similar species, for example sequence inversions and post-translational modification localization isomers of peptides (including “middle-down” peptides such as histone tails), lipid regioisomers, and even isotopomers. Another major direction is investigating the dipole alignment of larger proteins, which creates an exceptionally strong FAIMS effect that is a potential tool for structural biology. Q2: What have been the most significant instrumentation or applications developments in the history of ion mobility - mass spectrometry? In 1995 when I started graduate research at Northwestern, only two groups worldwide worked with IMS/MS and “the literature” meant papers by Bowers (UCSB). Well-wishers counseled me to “learn something useful like HPLC, as IMS would never have real utility”. This booklet showcases the scale of change since. First, the practical IMS/ToF platforms for complex biological analyses demonstrated by Clemmer have turned IMS/MS from an esoteric physical chemistry technique into a powerful analytical tool. By commercializing the IMS/ToF technology in Synapt instruments, Waters has greatly increased its impact via expanded number and diversity of applications. Concurrently, Guevremont at Canadian NRC has perfected FAIMS coupled to MS, deployed it for real-world bio and environmental analyses, and widely distributed it in the Ionalytics Selectra system (subsequently installed on Thermo MS platforms). The latest breakthrough is ultra-FAIMS by Owlstone, where extreme fields allow numerous qualitatively new separations and operational modes that we just begin to explore. Q3: Where do you see ion mobility - mass spectrometry making the most impact in the next 5 years? Any predictions for where the field will go? Sciences dealing with perturbations in media (such as optics or acoustics) at some point shift from the linear to nonlinear paradigm, where propagation depends on the magnitude of perturbation or its driving force. While the linear part remains industrially important (e.g., eyewear and architectural glass for optics), frontline research moves to nonlinear phenomena. IMS is undergoing that transition now with the rise of FAIMS, which should continue as the fundamental understanding improves, new modalities and applications emerge, and more instrumentation is introduced by vendors. Modifying and augmenting FAIMS separations through vapor dopants that render ion mobilities less linear is becoming routine. I expect this area to advance, extending to more specific interactions and to complexation with solution additives. Another route to higher separation power is integrating FAIMS with conventional IMS; proliferation of both technologies would make such 2-D platforms common. Along with mass spectrometry and conventional IMS, FAIMS will address increasingly large macromolecules, including proteins and their complexes.

  17. Advance Patent Waiver W(A)2010-031

    Broader source: Energy.gov [DOE]

    This is a request by CHRYSLER CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003347

  18. Advance Patent Waiver W(A)2008-021

    Broader source: Energy.gov [DOE]

    This is a request by CARGILL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17055

  19. Advance Patent Waiver W(A)2011-024

    Broader source: Energy.gov [DOE]

    This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000538.

  20. Advance Patent Waiver W(A)2011-023

    Broader source: Energy.gov [DOE]

    This is a request by SCHWEITZER ENGINEERING LAB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000537.

  1. Advance Patent Waiver W(A)2008-022

    Broader source: Energy.gov [DOE]

    This is a request by ABENGOA BIOENERGY BIOMASS OF KANSAS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC3607017028

  2. Advance Patent Waiver W(A)2005-053

    Broader source: Energy.gov [DOE]

    This is a request by ALLEGHENY TECHNLOGIES WAH CHANG DIVISION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42513.

  3. EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA

    Broader source: Energy.gov [DOE]

    DOE has postponed preparation of this EIS to better align the completion of the EIS with planned future operations of facilities on Hanford’s Central Plateau (such as Hanford’s Waste Treatment and Immobilization Plant).

  4. Advance Patent Waiver W(A)2009-004

    Broader source: Energy.gov [DOE]

    This is a request by SCHLUMBERGER TECHNOLOGY CORP for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18182

  5. Advance Patent Waiver W(A)2009-069

    Broader source: Energy.gov [DOE]

    This is a request by ENVIRON INTERNATIOAL CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000069

  6. Isotopic Studies of Contaminant Transport at the Hanford Site, WA

    E-Print Network [OSTI]

    Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

    2008-01-01T23:59:59.000Z

    High precision Th-230/Th- 232 and U-234/U-238 measurements using energy-filtered ICP magnetic sector multiple collector mass spectrometry.

  7. Advance Patent Waiver W(A)2006-019

    Broader source: Energy.gov [DOE]

    This is a request by NALCO CHEMICAL CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06FT42721

  8. Advance Patent Waiver W(A)2011-026

    Broader source: Energy.gov [DOE]

    This is a request by US SYNTHETIC CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003633.

  9. Advance Patent Waiver W(A)2008-026

    Broader source: Energy.gov [DOE]

    This is a request by Siemens Power Generation for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-98FT40343

  10. Advance Patent Waiver W(A)2005-055

    Broader source: Energy.gov [DOE]

    This is a request by SIEMEN for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42646.

  11. Advance Patent Waiver W(A)2005-054

    Broader source: Energy.gov [DOE]

    This is a request by SIEMEN for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42444.

  12. Advance Patent Waiver W(A)2012-028

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0005666.

  13. Advance Patent Waiver W(A)2011-032

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS ENERGY, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0003714.

  14. Advance Patent Waiver W(A)2008-028

    Broader source: Energy.gov [DOE]

    This is a request by INEOS USA LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-04GO14315

  15. Advance Patent Waiver W(A)2010-026

    Broader source: Energy.gov [DOE]

    This is a request by INEOS USA LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002883

  16. Advance Patent Waiver W(A)2008-035

    Broader source: Energy.gov [DOE]

    This is a request by POET RESEARCH, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO88033

  17. Advance Patent Waiver W(A)2011-065

    Broader source: Energy.gov [DOE]

    This is a request by OWENS CORNING for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005338.

  18. Advance Patent Waiver W(A)2010-003

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRICC GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000784

  19. Advance Patent Waiver W(A)2010-062

    Broader source: Energy.gov [DOE]

    This is a request by PARKER HANNIFIN CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000296

  20. Advance Patent Waiver W(A)2006-032

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL INTERNATIONAL, INC. for a DOE waiver of domestic and foreign patent rights under agreement UNKNOWN

  1. Advance Patent Waiver W(A)2013-007

    Broader source: Energy.gov [DOE]

    This is a request by CA TCHLIGHT ENERGY, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005974.

  2. Advance Patent Waiver W(A)2010-065

    Broader source: Energy.gov [DOE]

    This is a request by DRESSER WAUKESHA for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004016

  3. Advance Patent Waiver W(A)2013-022

    Broader source: Energy.gov [DOE]

    This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005795.

  4. Advance Patent Waiver W(A)2013-006

    Broader source: Energy.gov [DOE]

    This is a request by PRINCIPLE POWER, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005987.

  5. Advance Patent Waiver W(A)2013-003

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006108.

  6. Advance Patent Waiver W(A)2006-029

    Broader source: Energy.gov [DOE]

    This is a request by GENSCAPE, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42795

  7. Arc magmatism at different crustal levels, North Cascades, WA

    E-Print Network [OSTI]

    Shea, Erin Kathleen McLaren

    2014-01-01T23:59:59.000Z

    The mechanisms of magma ascent and emplacement inferred from study of intrusive complexes have long been the subject of intense debate. Current models favor incremental construction, but much of this work has been focused ...

  8. Advance Patent Waiver W(A)2013-005

    Broader source: Energy.gov [DOE]

    This is a request by STATOIL WIND US LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005988.

  9. UNITED STATES Pesticides Peril Ocean Life, Scientists Wa rn

    E-Print Network [OSTI]

    Studies Aid Pollution Control NOAA Supports Salt-Marsh Research in Georgia Satellites Meas ure Sea-Surface Tempera- ture in U,S.-Mexico Survey Chesapeake Bay Hard Crabs Will Be Scarce This Summer VIMS Studies and James H. Redman Disease in the Lives of Fish - The Role of Pollution Is Now Being Assessed, by Rich- ard

  10. Advance Patent Waiver W(A)2011-013

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES RESEARCH CENTER for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003953.

  11. EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA

    Broader source: Energy.gov [DOE]

    This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snohomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. The DOE NEPA process for this project has been canceled.

  12. Advance Patent Waiver W(A)2007-020

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42950

  13. Advance Patent Waiver W(A)2010-036

    Broader source: Energy.gov [DOE]

    This is a request by GE GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003251

  14. Advance Patent Waiver W(A)2011-062

    Broader source: Energy.gov [DOE]

    This is a request by ABENGOA SOLAR INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18038.

  15. Advance Patent Waiver W(A)2005-049

    Broader source: Energy.gov [DOE]

    This is a request by AMERICAN AIR LIQUIDE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41586.

  16. Advance Patent Waiver W(A)2011-070

    Broader source: Energy.gov [DOE]

    This is a request by CASCADE ENGINEERING INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005440.

  17. Advance Patent Waiver W(A)2009-060

    Broader source: Energy.gov [DOE]

    This is a request by PARKER HANNIFIN CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000412

  18. Advance Patent Waiver W(A)2010-034

    Broader source: Energy.gov [DOE]

    This is a request by LUMINATION, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003232

  19. Advance Patent Waiver W(A)2011-049

    Broader source: Energy.gov [DOE]

    This is a request by DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003916.

  20. Advance Patent Waiver W(A)2012-029

    Broader source: Energy.gov [DOE]

    This is a request by ALCOA COMMERICAL WINDOWS, LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0004012.

  1. Advance Patent Waiver W(A)2011-052

    Broader source: Energy.gov [DOE]

    This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000456.

  2. Advance Patent Waiver W(A)2012-030

    Broader source: Energy.gov [DOE]

    This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0000896.

  3. Advance Patent Waiver W(A)2011-001

    Broader source: Energy.gov [DOE]

    This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004908.

  4. Advance Patent Waiver W(A)2012-027

    Broader source: Energy.gov [DOE]

    This is a request by DAIMIER TRUCKS NORTH AMERICA for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0003348.

  5. Publications aWaRds,publications,pRoceedings,

    E-Print Network [OSTI]

    Davis, Lloyd M.

    : Christian G. Parigger, Alexander C. Woods, and Mohammad R. Rezaee, "Atomic Hydrogen and Molecular Carbon, S. R. Mishra, J. A. Johnson, "Rare earth doped downshifting glass ceramics for photovoltaic

  6. Advance Patent Waiver W(A)2011-002

    Broader source: Energy.gov [DOE]

    This is a request by APPLIED MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003838.

  7. Advance Patent Waiver W(A)2013-014

    Broader source: Energy.gov [DOE]

    This is a request by W.R GRACE AND CO for a DOE waiver of domestic and foreign patent rights under agreement DE- EE0005991.

  8. Advance Patent Waiver W(A)2011-008

    Broader source: Energy.gov [DOE]

    This is a request by CERAMATEC, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000395.

  9. Advance Patent Waiver W(A)2005-031

    Broader source: Energy.gov [DOE]

    This is a request by OSRAM SYLVANIA PRODUCTS, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO85042.

  10. Advance Patent Waiver W(A)2008-005

    Broader source: Energy.gov [DOE]

    This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43243

  11. Advance Patent Waiver W(A)2008-043

    Broader source: Energy.gov [DOE]

    This is a request by AMERICAN SUPERCONDUCTOR CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43240

  12. Advance Patent Waiver W(A)2006-005

    Broader source: Energy.gov [DOE]

    This is a request by AIR PRODUCTS & CHEMICALS for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO85026

  13. Advance Patent Waiver W(A)2011-046

    Broader source: Energy.gov [DOE]

    This is a request by ALSTOM GRID INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000551.

  14. Advance Patent Waiver W(A)2011-037

    Broader source: Energy.gov [DOE]

    This is a request by DELPHI AUTOMOTIVE SYSTEMS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000478.

  15. Advance Patent Waiver W(A)2009-064

    Broader source: Energy.gov [DOE]

    This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000303

  16. Advance Patent Waiver W(A)2007-022

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41247

  17. Advance Patent Waiver W(A)2005-062

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42626.

  18. Advance Patent Waiver W(A)2010-054

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIE for a DOE waiver of domestic and foreign patent rights under agreement DE-NT003894

  19. Advance Patent Waiver W(A)2010-019

    Broader source: Energy.gov [DOE]

    This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18063

  20. Advance Patent Waiver W(A)2012-016

    Broader source: Energy.gov [DOE]

    This is a request by LINDE, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007453.

  1. Advance Patent Waiver W(A)2011-018

    Broader source: Energy.gov [DOE]

    This is a request by ESOLAR for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003595.

  2. Advance Patent Waiver W(A)2013-008

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL MOTORS LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005969.

  3. Advance Patent Waiver W(A)2012-033

    Broader source: Energy.gov [DOE]

    This is a request by GE-GLOBAL RESEARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-OE000593.

  4. Advance Patent Waiver W(A)2012-020

    Broader source: Energy.gov [DOE]

    This is a request by CLIPPER WINDPOWER LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005141.

  5. Advance Patent Waiver W(A)2012-031

    Broader source: Energy.gov [DOE]

    This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-NT0005578.

  6. Advance Patent Waiver W(A)2010-033

    Broader source: Energy.gov [DOE]

    This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT01911

  7. Title: Advance Patent Waiver W(A)2011-041

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL MOTOR for a DOE waiver of domestic and foreign patent rights under agreement DE-AC36-08GO28308.

  8. Advance Patent Waiver W(A)2012-032

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005665.

  9. Advance Patent Waiver W(A)2008-046

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18131

  10. Advance Patent Waiver W(A)2007-005

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-06GO16054

  11. Advance Patent Waiver W(A)2011-030

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003911.

  12. Advance Patent Waiver W(A)2012-025

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-OE0000592.

  13. Advance Patent Waiver W(A)2011-027

    Broader source: Energy.gov [DOE]

    This is a request by VARIAN ASSOCIATES, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004737.

  14. Advance Patent Waiver W(A)2009-020

    Broader source: Energy.gov [DOE]

    This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-NT0005341

  15. Advance Patent Waiver W(A)2010-024

    Broader source: Energy.gov [DOE]

    This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42469

  16. Advance Patent Waiver W(A)2009-048

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT0005310

  17. Advance Patent Waiver W(A)2009-002

    Broader source: Energy.gov [DOE]

    This is a request by JOHNSON MATTNEY FUEL CELLS INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17019

  18. Advance Patent Waiver W(A)2009-009

    Broader source: Energy.gov [DOE]

    This is a request by BAKER HUGHES for a DOE waiver of domestic and foreign patent rights under agreement DE-FG08-GO18186

  19. Advance Patent Waiver W(A)2005-016

    Broader source: Energy.gov [DOE]

    This is a request by BAKER HUGHES INTERNATIONAL for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT15488.

  20. Station Processing for a Low Frequency Array in WA

    E-Print Network [OSTI]

    Ellingson, Steven W.

    for the remote station, minus 2 kW for cooling (considered "infrastructure"). #12;Station Processing Requirements stations (regardless of role as remote or core) (yes; remote stations can be "less" not "different") 2 (yes: 2-3 for core, 1 for remote) 6. Cost: TBD. (Prorated cost of ~US$500 per dual-pol element

  1. Advance Patent Waiver W(A)2005-025

    Broader source: Energy.gov [DOE]

    This is a request by G.E. NUCLEAR ENERGY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14635

  2. Advance Patent Waiver W(A)2005-027

    Broader source: Energy.gov [DOE]

    This is a request by WESTINGHOUSE ELECTRIC CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC07-05ID14636.

  3. Advance Patent Waiver W(A)2005-023

    Broader source: Energy.gov [DOE]

    This is a request by HEADWATER for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-04NT42448.

  4. Advance Patent Waiver W(A)2010-042

    Broader source: Energy.gov [DOE]

    This is a request by UNIVERSITY OF NORTH DAKOTA for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT43291

  5. Advance Patent Waiver W(A)2005-058

    Broader source: Energy.gov [DOE]

    This is a request by ASTRONAUTICS CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-03NT1948.

  6. Advance Patent Waiver W(A)2005-060

    Broader source: Energy.gov [DOE]

    This is a request by SHELL SOLAR INDUSTRIES, LP for a DOE waiver of domestic and foreign patent rights under agreement DE-AC36-98GO10337.

  7. Advance Patent Waiver W(A)2010-012

    Broader source: Energy.gov [DOE]

    This is a request by CRAY, INC. for a DOE waiver of domestic and foreign patent rights under agreement B580786

  8. Advance Patent Waiver W(A)2005-051

    Broader source: Energy.gov [DOE]

    This is a request by SOUTHERN COMPANY SERVICE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC02-05CH11327.

  9. 18130 Midvale Ave. N., Suite C Shoreline, WA 98133

    E-Print Network [OSTI]

    proposals are borrowed from the customer ideas and from the ideas of Save Our Wild Salmon, and Northwest Energy Coalition. Long-Term Vision We encourage Bonneville to take a long-term vision. We have been sized systems are the best value as they are responsive to specific needs. Long term energy planning

  10. FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SECURITY Energy Northwest (ENW) bonds are secured by payments from the Bonneville Power Administration (Bonneville). Bonneville's payment to ENW is made as an operating...

  11. Advance Patent Waiver W(A)2007-002

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL INTERNATIONAL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42947

  12. Advance Patent Waiver W(A)2005-032

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL INTERNATIONAL, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-02AL67624.

  13. Advance Patent Waiver W(A)2011-036

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL LABORATORIES for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000544.

  14. Advance Patent Waiver W(A)2010-057

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL INTERNATIONAL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003840

  15. Advance Patent Waiver W(A)2005-005

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-00OR22809.

  16. EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department...

    Broader source: Energy.gov (indexed) [DOE]

    evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas...

  17. EIS-0244: Plutonium Finishing Plant Stabilization, Hanford Site, Richland, WA

    Broader source: Energy.gov [DOE]

    This EIS evaluates the impacts on the human environment of: Stabilization of residual, plutonium-bearing materials at the PFP Facility to a form suitable for interim storage at the PFP Facility. Immobilization of residual plutonium-bearing materials at the PFP Facility. Removal of readily retrievable, plutonium-bearing materials left behind in process equipment, process areas, and air and liquid waste management systems as a result of historic uses.

  18. Advance Patent Waiver W(A)2011-058

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC CO. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005143.

  19. EIS-0189: Tank Waste Remediation System (TWRS), Richland, WA (Programmatic)

    Broader source: Energy.gov [DOE]

    This environmental impact statement evaluates the Department of Energy (DOE)'s, in cooperation with the Washington State Department of Ecology (Ecology), decisions on how to properly manage and dispose of Hanford Site tank waste and encapsulated cesium and strontium to reduce existing and potential future risk to the public, Site workers, and the environment. The waste includes radioactive, hazardous, and mixed waste currently stored in 177 underground storage tanks, approximately 60 other smaller active and inactive miscellaneous underground storage tanks (MUSTs), and additional Site waste likely to be added to the tank waste, which is part of the tank farm system. In addition, DOE proposes to manage and dispose of approximately 1,930 cesium and strontium capsules that are by-products of tank waste. The tank waste and capsules are located in the 200 Areas of the Hanford Site near Richland, Washington.

  20. Advance Patent Waiver W(A)2005-017

    Broader source: Energy.gov [DOE]

    This is a request by OSRA for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42341.

  1. Advance Patent Waiver W(A)2010-020

    Broader source: Energy.gov [DOE]

    This is a request by HALOTECHNICS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18144

  2. EIS-0330: Wallula Power Project, Walla Walla County, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes DOE's proposal to construct, operate, maintain, and decontaminate and decommission two depleted uranium hexafluoride (DUF 6) conversion facilities, at Portsmouth, Ohio, and Paducah, Kentucky.

  3. Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet)

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial ConsumersThousand CubicCubicIndiaFeet)6Feet)3Year Jan1363(Million

  4. Sumas, WA Natural Gas Imports by Pipeline from Canada

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial ConsumersThousand CubicCubicIndiaFeet)6Feet)3Year12,530

  5. Advance Patent Waiver W(A)2011-072

    Broader source: Energy.gov [DOE]

    This is a request by GE GLOBAL RESEARCHH CENTER for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005344.

  6. Hanford, WA Selected as Plutonium Production Facility | National Nuclear

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTubahq.na.gov Office ofDepartment ofrAdministrationNational|HSEMC

  7. File:INL-geothermal-wa.pdf | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump to: navigation,SizeEthiopiametstak.pdf Jump to:nv.pdf Jump100

  8. Petra Nova - W.A. Parish Project | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCO Overview OCHCO OCHCOControlGuide to a BalancedPersonnel Security

  9. Microsoft Word - WA Parish_MAP_Final.docx

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO2:Introduction toManagement of the National NuclearRegulation;I07 AnnualMicrosoft WordW.A.

  10. RAPID/Roadmap/15-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ | Roadmap Jump to: navigation, search RAPIDaUT-ab <

  11. RAPID/Roadmap/3-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ | Roadmap Jump to: navigation, searche <c <caca <

  12. Microsoft Word - WA Parish_MAP_Final.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighandSWPA / SPRA / USACE625 FINALOptimizationForArticle

  13. C:\Temp_jhd\spacers\spacers_wa_2014.prn

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C o . C l a r k C o . C l a r24 TITLE 5-GOVERNMENTI

  14. BayWa Sunways JV | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORT Americium/CuriumAguaBBB UmwelttechnikBarloventoSunways JV

  15. DOE - Office of Legacy Management -- Hanford Engineer Works - WA 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTable ofArizonaBuffalo -ElkGuterl Specialty Steel -Hanford

  16. RAPID/Roadmap/11-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas) Redirecta <

  17. RAPID/Roadmap/11-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas) Redirecta <b < RAPID‎ |

  18. RAPID/Roadmap/11-WA-c | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas) Redirecta <b < RAPID‎ |c

  19. RAPID/Roadmap/12-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas)ID-a < RAPID‎ |TX-a

  20. RAPID/Roadmap/12-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas)ID-a < RAPID‎ |TX-ab <