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Sample records for wa namibia sb

  1. Namibia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,MeregNIFESpinning Mills Ltd NSML JumpNamibia: Energy

  2. LAND REFORM IN NAMIBIA: AN ANALYSIS OF MEDIA COVERAGE

    E-Print Network [OSTI]

    Engelbrecht, Petrus J.

    2014-08-31

    in ensuring that land reform is successfully designed and executed. The media informs the public, sets the public and political agenda, holds the government accountable, and serves as a public sphere. This project analyses Namibia's three primary daily...

  3. MHK Projects/GPP Namibia | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,Information MHKMHK5 < MHK Projects JumpDevelopment ofCapeGPP Namibia

  4. Impact of HIV/AIDS on the Agricultural Sector in Northern Namibia 

    E-Print Network [OSTI]

    Carter, Charles Russell

    2011-02-22

    of the government to design their extension trainings; however, they are more flexible to do creative outreaches as they do not have to follow the strict governmental guidelines (CIA, 2009). 22 In Namibia, where one in five individuals is HIV positive... ................................................................................. 5 Role of Agricultural Extension workers in HIV Education ........... 7 II IMPACT OF HIV/AIDS ON COMMUNITY LEVEL FOOD SECURITY IN NAMIBIA .................................................................. 8 Introduction...

  5. The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate...

    Office of Scientific and Technical Information (OSTI)

    The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase (AgSb)3Te4. Citation Details In-Document Search Title: The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via...

  6. WA_05_022_DOW_CHEMICAL_COMPANY_Waiver_of_domestic_and_Foreig...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5022DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticand...

  7. WA_96_016_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domestic_...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    16AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

  8. Knowing and deciding: participation in conservation and development initiatives in Namibia and Argentina 

    E-Print Network [OSTI]

    Newsham, Andrew

    2007-01-01

    ’ in Namibia and the Alto Bermejo Project in Argentina. The concept of sustainability – of living in a way that meets both current and future needs – has led, on a global scale, to a re-casting of the relationship between conservation and development as one...

  9. The Namibia Early Flood Warning System, A CEOS Pilot Project Daniel Mandl1

    E-Print Network [OSTI]

    Grossman, Robert

    The Namibia Early Flood Warning System, A CEOS Pilot Project Daniel Mandl1 , Stuart Frye2 , Robert and dissemination of both space-based and ground sensor data and data products for the purpose of flood disaster system which was prototyped during the past few years during the flood seasons which occurred

  10. On the fluctuations and vertical structure of the shelf circulation off Walvis Bay, Namibia.

    E-Print Network [OSTI]

    Mohrholz, Volker

    20nm off Walvis Bay, Namibia. Spatial and temporal variations of the wind field in the South East Atlantic were investigated by 3-day averaged wind fields measured by the QuikSCAT satellite. The local wind was provided by a time series of hourly wind vectors measured on a moored buoy off Swakopmund. The significant

  11. Extensive metazoan reefs from the Ediacaran Nama Group, Namibia: the rise of benthic suspension feeding

    E-Print Network [OSTI]

    of new resources, more active carbon removal with a strengthened energy flow between planktic and benthic, UK ABSTRACT We describe new, ecologically complex reef types from the Ediacaran Nama Group, Namibia in Earth's history. Calcareous biomineralization changed car- bonate sediment production from one

  12. WA_96_012_ALLIEDSIGNAL_INC_CERAMIC_COMPONENTS_Waiver_of_Dome...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ALLIEDSIGNALINCCERAMICCOMPONENTSWaiverofDome.pdf WA96011ALLIEDSIGNALWaiverofDomesticandForeignRight.pdf WA1993021ALLIEDSIGNALINCWaiverofDomesticandForeign...

  13. WA_98_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    01REYNOLDSMETALSCOMPANYWaiverofDomesticandFor.pdf WA98001REYNOLDSMETALSCOMPANYWaiverofDomesticandFor.pdf WA98001REYNOLDSMETALSCOMPANYWaiverofDomesticand...

  14. WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    BPSOLARINTERNATIONALWaiverofDomesticandFore.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUnder...

  15. CRAD, NNSA- Safety Basis (SB)

    Broader source: Energy.gov [DOE]

    CRAD for Safety Basis (SB). Criteria Review and Approach Documents (CRADs) that can be used to conduct a well-organized and thorough assessment of elements of safety and health programs.

  16. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy ResourcesPoint,View,BayWa Group

  17. waTer economics. environmenTand Policy

    E-Print Network [OSTI]

    Botea, Adi

    41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

  18. WA_98_023_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Domestic_and_Fo...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    23McDERMOTTTECHNOLOGYINCWaiverofDomesticandFo.pdf WA98023McDERMOTTTECHNOLOGYINCWaiverofDomesticandFo.pdf WA98023McDERMOTTTECHNOLOGYINCWaiverofDomesticand...

  19. WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRigh...

  20. STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE OF

    E-Print Network [OSTI]

    Schrag, Daniel

    STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE, 2000; Frimmel, 2008). The most recent review of the stratigraphy of the PNG concludes that the Kaigas be compro- mised by complexities in the stratigraphy of glacial deposits: lateral facies changes

  1. FITCH RATES ENERGY NORTHWEST, WA'S ELECTRIC REV RFDG BONDS 'AA...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FITCH RATES ENERGY NORTHWEST, WA'S ELECTRIC REV RFDG BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-22 September 2015: Fitch Ratings assigns its 'AA' rating to the following bonds...

  2. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  3. Transport properties in AlInSb/InAsSb heterostructures

    SciTech Connect (OSTI)

    Zhang, Yuwei; Zhang, Yang, E-mail: zhang-yang@semi.ac.cn; Wang, Chengyan; Zeng, Yiping [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2013-12-28

    Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1?y}Sb/InAs{sub 1?x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37?000 cm{sup 2}/V s is attainable in 15?nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

  4. Electrochemical Insertion/extraction of Lithium in Multiwall Carbon Nanotube/Sb and SnSb?.? Nanocomposites

    E-Print Network [OSTI]

    Chen, Wei Xiang

    Multiwall carbon nanotubes (CNTs) were synthesized by catalytic chemical vapor deposition of acetylene and used as templates to prepare CNT-Sb and CNT-SnSb?.? nanocomposites via the chemical reduction of SnCl? and SbCl? ...

  5. RAPID/Roadmap/8-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b < RAPID‎WA-aFD-bUT-a8-WA-a

  6. Computer Science & Engineering Box 352350 Seattle, WA 98195-2350

    E-Print Network [OSTI]

    Borenstein, Elhanan

    Computer Science & Engineering #12;Box 352350 Seattle, WA 98195-2350 Nonprofit Org US Postage PAID in the Computer Science Department. He is a superb researcher in the design of interactive, visual data, Carnegie Mellon University's Finmeccanica Associate Professor in the School of Computer Science, is widely

  7. EIS-0397: Lyle Falls Fish Passage Project, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

  8. WA S C2 0 01 Handbook of

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    WA S C2 0 01 Handbook of Accreditation #12;The Western Association of Schools and Colleges be terminated, or when the Commission formally acts to terminate accreditation. This Handbook of Accreditation associations and related bodies, see pages 118­119. #12;HANDBOOK OF ACCREDITATION Standards Addressing Core

  9. Gaseous Detonation-Driven Fracture of Tubes Tong Wa Chao

    E-Print Network [OSTI]

    Barr, Al

    Gaseous Detonation-Driven Fracture of Tubes Thesis by Tong Wa Chao In Partial Fulfillment An experimental investigation of fracture response of aluminum 6061-T6 tubes under internal gaseous detonation of this particular traveling load and tube geometry produced fracture data not available before in the open

  10. SbSI nanocrystal formation in As–Sb–S–I glass under laser beam

    SciTech Connect (OSTI)

    Azhniuk, Yu.M.; Stoyka, V.; Petryshynets, I.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V.; Zahn, D.R.T.

    2012-06-15

    Highlights: ? As–Sb–S–I glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI. ? The glass structure and composition are confirmed by SEM, EDX, and Raman studies. ? Laser-induced crystallization of SbSI from the glass is observed by Raman spectroscopy. -- Abstract: As–Sb–S–I glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI in a broad compositional interval. Their structure and composition are confirmed by the studies of scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Laser-induced crystallization of SbSI crystallites from the glass matrix is observed in the course of the micro-Raman measurement as a result of local laser beam heating.

  11. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  12. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  13. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing recommendations for DWPF along with some data related to Safety Class documentation at DWPF. Some significant observations regarding SB8 follow: Reduced washing in Tank 51 led to an increase in the wt.% soluble solids of the DWPF feed. If wt.% total solids for the SRAT and SME product weren’t adjusted upward to maintain insoluble solids levels similar to past sludge batches, then the rheological properties of the slurry went below the low end of the DWPF design bases for the SRAT and SME. Much higher levels of dissolved manganese were found in the SRAT and SME products than in recent sludge batches. Closed crucible melts were more reduced than expected. The working hypothesis is that the soluble Mn is less oxidizing than assumed in the REDOX calculations. A change in the coefficient for Mn in the REDOX equation was recommended in a separate report. The DWPF (Hsu) stoichiometric acid equation was examined in detail to better evaluate how to control acid in DWPF. The existing DWPF equation can likely be improved without changing the required sample analyses through a paper study using existing data. The recommended acid stoichiometry for initial SB8 SRAT batches is 115-120% stoichiometry until some processing experience is gained. The conservative range (based on feed properties) of stoichiometric factors derived in this study was from 110-147%, but SRNL recommends using only the lower half of this range, 110-126% even after initial batches provide processing experience. The stoichiometric range for sludge-only processing appears to be suitable for coupled operation based on results from the run in the middle of the range. Catalytic hydrogen was detectable (>0.005 vol%) in all SRAT and SME cycles. Hydrogen reached 30-35% of the SRAT and SME limits at the mid-point of the stoichiometry window (bounding noble metals and acid demand).

  14. RAPID/Roadmap/1-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevada <UtahMontanasourceWA-a < RAPID‎ |

  15. RAPID/Roadmap/11-WA-a | Open Energy Information

    Open Energy Info (EERE)

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  16. RAPID/Roadmap/11-WA-b | Open Energy Information

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  17. RAPID/Roadmap/11-WA-c | Open Energy Information

    Open Energy Info (EERE)

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  18. RAPID/Roadmap/13-WA-a | Open Energy Information

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  19. RAPID/Roadmap/14-WA-c | Open Energy Information

    Open Energy Info (EERE)

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  20. RAPID/Roadmap/14-WA-e | Open Energy Information

    Open Energy Info (EERE)

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  1. RAPID/Roadmap/18-WA-a | Open Energy Information

    Open Energy Info (EERE)

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  2. RAPID/Roadmap/19-WA-a | Open Energy Information

    Open Energy Info (EERE)

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  3. RAPID/Roadmap/19-WA-b | Open Energy Information

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  4. RAPID/Roadmap/19-WA-c | Open Energy Information

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  5. RAPID/Roadmap/19-WA-d | Open Energy Information

    Open Energy Info (EERE)

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  6. RAPID/Roadmap/19-WA-e | Open Energy Information

    Open Energy Info (EERE)

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  7. RAPID/Roadmap/19-WA-f | Open Energy Information

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  8. RAPID/Roadmap/7-WA-a | Open Energy Information

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  9. RAPID/Roadmap/9-WA-a | Open Energy Information

    Open Energy Info (EERE)

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  10. RAPID/Roadmap/5-WA-a | Open Energy Information

    Open Energy Info (EERE)

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  11. BayWa Sunways JV | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'S FUTURE.EnergyWoodenDateSAEngineering LLCBarner InvestmentBayWa

  12. SB 375 IMPLEMENTATION: FROM PLAN TO REALITY

    E-Print Network [OSTI]

    California at Davis, University of

    sustainable communities in a post-SB 375 world. · Urban Greening: $41.5 million in capital projects and plans Development Cross-Agency Facilitation and Coordination Funding and Support for Sustainable Communities connections between state, local, and regional agencies - Tools and guidance - Sustainable Communities

  13. U.S. NUclear WaSte techNical revieW Board

    E-Print Network [OSTI]

    , packaging, and transporting spent nuclear fuel and high-level radioactive waste is presented. The technical-level radioactive waste. Sincerely, B. John Garrick Chairman #12;NUclear WaSte techNical revieW Board 2005 Dr. BU.S. NUclear WaSte techNical revieW Board Report to The U.S. Congress and The Secretary

  14. The real costs of housing in WA BANKWEST CURTIN ECONOMICS CENTRE

    E-Print Network [OSTI]

    Mucina, Ladislav

    The real costs of housing in WA BANKWEST CURTIN ECONOMICS CENTRE Focus on Western Australia Report Series, No.2 April 2014 HOUSING AFFORDABILITY #12;About the Centre The Bankwest Curtin Economics Centre, public and not-for-profit sectors. #12;Contents HOUSING AFFORDABILITY The real costs of housing in WA

  15. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected during SME processing. Mercury behavior was consistent with that seen in previous SRAT runs. Mercury was stripped below the DWPF limit on 0.8 wt% for all runs. Rheology yield stress fell within or below the design basis of 1-5 Pa. The low acid Tank 40 run (106% acid stoichiometry) had the highest yield stress at 3.78 Pa.

  16. Advance Patent Waiver W(A)2009-016 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    16 Advance Patent Waiver W(A)2009-016 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

  17. Advance Patent Waiver W(A)2009-058 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    09-058 Advance Patent Waiver W(A)2009-058 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to...

  18. Best Practices Case Study: Devoted Builders, LLC, Mediterrtanean Villas, Pasco,WA

    SciTech Connect (OSTI)

    2010-12-01

    Devoted Builders of Kennewick, WA worked with Building America's BIRA team to achieve the 50% Federal tax credit level energy savings on 81 homes at its Mediterranean Villas community in eastern Washington.

  19. Pulling of 3 mm diameter AlSb rods by micro-pulling down method

    E-Print Network [OSTI]

    Bourret-Courchesne Ph.D., Edith

    2009-01-01

    Sb) and AlSb crystal zirconia were expected as crucibles,crucible shape with zirconia. Page 3/10 Fig 1 : vitreous

  20. K2CsSb Cathode Development

    SciTech Connect (OSTI)

    Smedley,J.; Rao, T.; Wang, E.

    2008-10-01

    K{sub 2}CsSb is an attractive photocathode for high current applications. With a quantum efficiency of >4% at 532nm and >10% at 355nm, it is the only cathode to have demonstrated an average current of 35mA in an accelerator environment We describe ongoing cathode development work. for the energy recovery linac being constructed at BNL Several cathodes have been created on both copper and stainless steel substrates, and their spatial uniformity and spectral response have been characterized. Preliminary lifetime measurements have been performed at high average current densities (>1 mA/mm{sup 2}).

  1. $J$ functions for the process ud$\\to$WA

    E-Print Network [OSTI]

    D. Bardin; L. Kalinovskaya; E. Uglov; W. von Schlippe

    2014-12-29

    In this paper we present a description of the universal approach for analytic calculations for a certain class of $J$ functions for six topologies of the boxes for process $ud\\rightarrow WA$. These functions $J$ arise at the reduction of infrared divergent box diagrams. The standard Passarino--Veltman reduction of four-point box diagram with an internal photon line connecting two external lines on the mass shell leads to infrared-divergent and mass-singular $D_0$ functions. In the system SANC a systematic procedure is adopted to separate both types of singularities into the simplest objects, namely $C_0$ functions. The functions $J$, in turn, are represented as certain linear combinations of the standard $D_0$ and $C_0$ functions. The subtracted $J$ functions are free of both types of singularities and are expressed as explicit and compact linear combinations of dilogarithm functions. We present extensive comparisons of numerical results of SANC with those obtained with the aid of the LoopTools package.

  2. Fragile structural transition in Mo3Sb7

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amore »critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.« less

  3. Astrometric orbits of SB9 stars

    E-Print Network [OSTI]

    Jancart, S; Babusiaux, C; Pourbaix, D

    2005-01-01

    Hipparcos Intermediate Astrometric Data (IAD) have been used to derive astrometric orbital elements for spectroscopic binaries from the newly released Ninth Catalogue of Spectroscopic Binary Orbits (SB9). Among the 1374 binaries from SB9 which have an HIP entry, 282 have detectable orbital astrometric motion (at the 5% significance level). Among those, only 70 have astrometric orbital elements that are reliably determined (according to specific statistical tests discussed in the paper), and for the first time for 20 systems, representing a 10% increase relative to the 235 DMSA/O systems already present in the Hipparcos Double and Multiple Systems Annex. The detection of the astrometric orbital motion when the Hipparcos IAD are supplemented by the spectroscopic orbital elements is close to 100% for binaries with only one visible component, provided that the period is in the 50 - 1000 d range and the parallax is larger than 5 mas. This result is an interesting testbed to guide the choice of algorithms and stati...

  4. Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux

    E-Print Network [OSTI]

    Pennycook, Steve

    Epitaxial growth of silicide layers on Si substrates has attracted much attention due to their technologicalFormation of MnSb during the growth of MnSi layers in the presence of an Sb flux K. Matsuda, Y have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition

  5. Anisotropic giant magnetoresistance in NbSb?

    SciTech Connect (OSTI)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10?% in 2 K and 9 T field, and 4.3 × 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  6. Anisotropic giant magnetoresistance in NbSb?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10?% in 2 K and 9 T field, and 4.3 × 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomore »the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.« less

  7. SB9: The Ninth Catalogue of Spectroscopic Binary Orbits

    E-Print Network [OSTI]

    Pourbaix, D; Batten, A H; Fekel, F C; Hartkopf, W I; Levato, H; Morrell, N I; Torres, G; Udry, S

    2004-01-01

    The Ninth Catalogue of Spectroscopic Binary Orbits (http://sb9.astro.ulb.ac.be) continues the series of compilations of spectroscopic orbits carried out over the past 35 years by Batten and collaborators. As of 2004 May 1st, the new Catalogue holds orbits for 2,386 systems. Some essential differences between this catalogue and its predecessors are outlined and three straightforward applications are presented: (1) Completeness assessment: period distribution of SB1s and SB2s; (2) Shortest periods across the H-R diagram; (3) Period-eccentricity relation.

  8. SB9: The Ninth Catalogue of Spectroscopic Binary Orbits

    E-Print Network [OSTI]

    D. Pourbaix; A. A. Tokovinin; A. H. Batten; F. C. Fekel; W. I. Hartkopf; H. Levato; N. I. Morrell; G. Torres; S. Udry

    2004-06-25

    The Ninth Catalogue of Spectroscopic Binary Orbits (http://sb9.astro.ulb.ac.be) continues the series of compilations of spectroscopic orbits carried out over the past 35 years by Batten and collaborators. As of 2004 May 1st, the new Catalogue holds orbits for 2,386 systems. Some essential differences between this catalogue and its predecessors are outlined and three straightforward applications are presented: (1) Completeness assessment: period distribution of SB1s and SB2s; (2) Shortest periods across the H-R diagram; (3) Period-eccentricity relation.

  9. No. 16 ISSN 10278389 March 2012 The Southern African Large Telescope (Courtesy: S.B. Potter)

    E-Print Network [OSTI]

    Jarrett, Thomas H.

    P. Martinez South Africa Editor: wgssa@saao.ac.za P. Spargo South Africa P. Okeke Nigeria misunn-East and Africa. In partic- ular, the completion of HESS (the High Energy Stereoscopic System, in Namibia-class observational capability from ultra-high energy gamma-rays, through optical/near-IR to radio wave- lengths

  10. Electrical impedance tomography and Calderon's Department of Mathematics, University of Washington, Seattle, WA 98195, USA

    E-Print Network [OSTI]

    Uhlmann, Gunther

    Electrical impedance tomography and Calder´on's problem G Uhlmann Department of Mathematics, University of Washington, Seattle, WA 98195, USA E-mail: gunther@math.washington.edu Abstract. We survey mathematical developments in the inverse method of Electrical Impedance Tomography which consists

  11. Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide-area algorithms for

    E-Print Network [OSTI]

    " Venkatasubramanian School of Electrical Engineering and Computer Science Washington State University, Pullman, WA will discuss the new algorithms along with illustrative examples on standard IEEE test systems. #12;- 2 - 1 that heavy power-flows across long transmission lines weakens the operational security of the power system

  12. Local Stability of the Median LMS Filter W.A. Sethares // J.A. Bucklew

    E-Print Network [OSTI]

    Bucklew, James Antonio

    Local Stability of the Median LMS Filter W.A. Sethares // J.A. Bucklew November 17, 2000 1 #12; Abstract Local stability properties of the recently proposed median LMS adaptive filter are investigated. This will help delineate those applications for which the median LMS is an appropriate adaptive al­ gorithm

  13. An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg,

    E-Print Network [OSTI]

    An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg, D. Frigione+, M of an international pellet ablation database (IPADBASE) that has been assembled to enable studies of pellet ablation theories that are used to describe the physics of an ablating fuel pellet in a tokamak plasma. The database

  14. Proceedings ASCE International Water Resources Engineering Conference August 8-12, 1999, Seattle, WA

    E-Print Network [OSTI]

    Wells, Scott A.

    , WA #12;2 River Basin Modeling Using CE-QUAL-W2 Version 3 Scott A. Wells1 Introduction CE-QUAL-W2 hydraulic and water quality models in common use for unsteady flow include the 1-D dynamic EPA model DYNHYD the ability to characterize adequately the hydraulics or water quality of deeper reservoir systems or deep

  15. TANK 40 FINAL SB6 CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2010-08-13

    A sample of Sludge Batch 6 (SB6) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS), and a portion of the sample was designated for SB6 processing studies. The SB6 WAPS sample was also analyzed for chemical composition including noble metals and fissile composition, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB6. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB6 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids were allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 485 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples.

  16. Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments

    E-Print Network [OSTI]

    A. Ster; T. Csorgo; B. Lorstad

    1998-09-28

    Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

  17. MICRO WA VE DEVICES. EFFECT OF CONTACT ALLOYING BEHAVIOUR ON THE ELECTRICAL

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Sb thermocompress- ed Gunn diodes after undergoing heating cycles. The effects of annealing time and temperature microwave materials [1]. Thus to realize transferred electron devices with low dissipation power [2-semiconductor junction. Experimental procedure : The contacts were manu- factured by evaporating a 1 000 Á thick dot

  18. Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller

    E-Print Network [OSTI]

    McCluskey, Matthew

    Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

  19. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  20. The formation mechanisms and optical characteristics of GaSb quantum rings

    SciTech Connect (OSTI)

    Lin, Wei-Hsun; Pao, Chun-Wei [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)] [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Wang, Kai-Wei [College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China)] [College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China); Liao, Yu-An [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)] [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China) [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2013-08-07

    The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures.

  1. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2012-03-15

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB7b. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH{sup -}/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method developed by SRNL AD and previously described. The following conclusions were drawn from the analytical results reported here: (1) The ratios of the major elements for the SB7b WAPS sample are different from those measured for the SB7a WAPS sample. There is less Al and Mn relative to Fe than the previous sludge batch. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. The element ratios for Al/Fe, Ca/Fe, Mn/Fe, and U/Fe agree within 10% between this work and the DWPF Sludge Receipt and Adjustment Tank (SRAT) receipt analyses. (3) Sulfur in the SB7b WAPS sample is 82% soluble, slightly less than results reported for SB3, SB4, and SB6 samples but unlike the 50% insoluble sulfur observed in the SB5 WAPS sample. In addition, 23% of the soluble sulfur is not present as sulfate in SB7b. (4) The average activities of the fissile isotopes of interest in the SB7b WAPS sample are (in {mu}Ci/g of total dried solids): 4.22E-02 U-233, 6.12E-04 U-235, 1.08E+01 Pu-239, and 5.09E+01 Pu-241. The full radionuclide composition will be reported in a future document. (5) The fission product noble metal and Ag concentrations appear to have largely peaked in previous DWPF sludge batches, with the exception of Ru, which still shows a slight increase in SB7b.

  2. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  3. Structural transition and amorphization in compressed ? - Sb 2 O 3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhao, Zhao; Zeng, Qiaoshi; Zhang, Haijun; Wang, Shibing; Hirai, Shigeto; Zeng, Zhidan; Mao, Wendy L.

    2015-05-27

    Sb?O?-based materials are of broad interest in materials science and industry. High-pressure study using diamond anvil cells shows promise in obtaining new crystal and electronic structures different from their pristine states. Here, we conducted in situ angle dispersive synchrotron x-ray-diffraction and Raman spectroscopy experiments on ?-Sb?O? up to 50 GPa with neon as the pressure transmitting medium. A first-order structural transition was observed in between 15 and 20 GPa, where the cubic phase I gradually transformed into a layered tetragonal phase II through structural distortion and symmetry breaking. To explain the dramatic changes in sample color and transparency, we performedmore »first-principles calculations to track the evolution of its density of states and electronic structure under pressure. At higher pressure, a sluggish amorphization was observed. Our results highlight the structural connections among the sesquioxides, where the lone electron pair plays an important role in determining the local structures.« less

  4. DOE Zero Energy Ready Home Case Study: Dwell Development, Seattle, WA,

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i pStateDOE FederalTheofHeyeck, AEP, Sr.EnergyWA |

  5. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  6. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  7. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H. [Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China); Loubychev, Dmitri; Liu, Amy; Fastenau, Joel [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Lindemuth, Jeff [Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9?×?10{sup 12}?cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  8. Ab initio study of structural, electronic, magnetic alloys: XTiSb (X = Co, Ni and Fe)

    SciTech Connect (OSTI)

    Ibrir, M. Berri, S.; Lakel, S.; Alleg, S.; Bensalem, R.

    2015-03-30

    Structural, electronic and magnetic properties of three semi-Heusler compounds of CoTiSb, NiTiSb and FeTiSb were calculated by the method (FP-LAPW) which is based on the DFT code WIEN2k. We used the generalized gradient approximation (GGA (06)) for the term of the potential exchange and correlation (XC) to calculate structural properties, electronic properties and magnetic properties. Structural properties obtained as the lattice parameter are in good agreement with the experimental results available for the electronic and magnetic properties was that: CoTiSb is a semiconductor NiTiSb is a metal and FeTiSb is a half-metal ferromagnetic.

  9. Photoemission study of the electronic structure and charge density waves of Na?Ti?Sb?O

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tan, S. Y. [Science and Technology on Surface Physics and Chemistry Lab., Mianyang (China); Fundan Univ., Shanghai (China); Jiang, J. [Fundan Univ., Shanghai (China); Nanjing Univ., Nanjing (China); Ye, Z. R. [Fundan Univ., Shanghai (China); Niu, X. H. [Fundan Univ., Shanghai (China); Nanjing Univ., Nanjing (China); Song, Y. [Rice Univ., Houston, TX (United States); Zhang, C. L. [Rice Univ., Houston, TX (United States); Univ. of Tennessee, Knoxville, TN (United States); Dai, P. C. [Rice Univ., Houston, TX (United States); Xie, B. P. [Fundan Univ., Shanghai (China); Nanjing Univ., Nanjing (China); Lai, X. C. [Science and Technology on Surface Physics and Chemistry Lab., Mianyang (China); Feng, D. L. [Fundan Univ., Shanghai (China); Nanjing Univ., Nanjing (China)

    2015-04-30

    The electronic structure of Na?Ti?Sb?O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na?Ti?Sb?O in the non-magnetic state, which indicates that there is no magnetic order in Na?Ti?Sb?O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na?Ti?Sb?O. Photon energy dependent ARPES results suggest that the electronic structure of Na?Ti?Sb?O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV at 7 K, indicating that Na?Ti?Sb?O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)

  10. Photoemission study of the electronic structure and charge density waves of Na?Ti?Sb?O

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tan, S. Y.; Jiang, J.; Ye, Z. R.; Niu, X. H.; Song, Y.; Zhang, C. L.; Dai, P. C.; Xie, B. P.; Lai, X. C.; Feng, D. L.

    2015-04-30

    The electronic structure of Na?Ti?Sb?O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na?Ti?Sb?O in the non-magnetic state, which indicates that there is no magnetic order in Na?Ti?Sb?O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na?Ti?Sb?O. Photon energy dependent ARPES results suggest that the electronic structure of Na?Ti?Sb?O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV atmore »7 K, indicating that Na?Ti?Sb?O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)« less

  11. Transit Vehicles as Traffic Probe Sensors F.W. Cathey, University of Washington, Dept. of Electrical Engineering, Box 352500, Seattle, WA, 98195-2500,

    E-Print Network [OSTI]

    TRB 02-2228 Transit Vehicles as Traffic Probe Sensors F.W. Cathey, University of Washington, Dept. of Electrical Engineering, Box 352500, Seattle, WA, 98195-2500, phone 206-616-3185, fax 206-616-1787, fritz@its.washington.edu D.J. Dailey, University of Washington, Dept. of Electrical Engineering, Box 352500, Seattle, WA

  12. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    E-Print Network [OSTI]

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-01-01

    The Electrochemical Society (Batteries and Energy ConversionDeposition for Lithium Batteries Seung-Wan Song, a, * Ronaldrechargeable lithium batteries. Introduction Sb-containing

  13. Method of making AlInSb by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Baucom, Kevin C. (Albuquerque, NM)

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  14. Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2011-10-01

    High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

  15. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  16. W.A. SERDIJN: "A CLASSIFICATION OF ELECTRONIC SIGNAL-PROCESSING FUNCTIONS" 1 A classification of electronic signal-processing

    E-Print Network [OSTI]

    Serdijn, Wouter A.

    W.A. SERDIJN: "A CLASSIFICATION OF ELECTRONIC SIGNAL-PROCESSING FUNCTIONS" 1 A classification classification of electronic signal-processing functions is proposed. Electronic signals can either be 1 sources, wave- shaping circuits, digital logic functions, digital memories, power supplies, and converters

  17. TWRIa n n u a l r e p o r t The Texas waTer

    E-Print Network [OSTI]

    Mukhtar, Saqib

    The sole designaTed waTer resources insTiTuTe in Texas since 1952. Securing and managing sufficient three programmatic areas: · Water Quality Improvement · Water Sustainability and Security · Water Resources Research Act of 1964. That act established water resources institutes in each state and provided

  18. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb...

    Office of Scientific and Technical Information (OSTI)

    hole mobility Insub 0.41Gasub 0.59SbAlsub 0.91Gasub 0.09Sb quantum well structures grown by molecular beam epitaxy Citation Details In-Document Search Title:...

  19. Temperature dependence of the dielectric response of AlSb

    SciTech Connect (OSTI)

    Jung, Y. W.; Kim, T. J.; Kim, Y. D.; Shin, S. H.; Kim, S. Y.; Song, J. D.

    2011-12-23

    Spectroscopic ellipometry was used to determine the optical response of an intrinsic AlSb film as a function of temperature. The 1.5 {mu}m thick film was grown on a (001) GaAs substrate by molecular beam epitaxy. Measurements were done at temperatures from 300 K to the growth temperature of 800 K over a spectral range of 0.7 to 5.0 eV. To avoid oxidation artifacts, measurements were done with the film in situ. The data were analyzed using a parametric semiconductor model for its temperature dependence.

  20. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method.

  1. SB Electronics Breaks Ground on New Factory | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy BillsNo. 195 -Rob Roberts About Us Rob RobertsSelectSAE3282 August 2011SB

  2. Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3

    E-Print Network [OSTI]

    Shen, Guoyin

    Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3 P. P. Kong1 , F. Sun1,3 , L. Y induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition

  3. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    DOE Patents [OSTI]

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  4. Carbon acceptors and carbon-hydrogen complexes in AlSb M. D. McCluskey*

    E-Print Network [OSTI]

    McCluskey, Matthew

    Carbon acceptors and carbon-hydrogen complexes in AlSb M. D. McCluskey* Department of Physics modes LVM's arising from carbon impurities in n- and p-type AlSb. The first and second harmonics. A peak at 572.9 cm 1 is tentatively identified as the 13 C LVM. Carbon-hydrogen complexes were formed

  5. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  6. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  7. Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system

    E-Print Network [OSTI]

    Yener, Aylin

    of a high quality dielectric/substrate interface. Native oxides of III­V com- pounds lead to the formation Sb is formed at the oxide/GaSb interface, which leads to a high leakage current.8 To overcome treatment. In contrast, NH4 2S and HCl solutions inhibit the Sb oxide formation. The lowest amount of Ga

  8. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

    SciTech Connect (OSTI)

    Janiak, F. Motyka, M.; S?k, G.; Dyksik, M.; Ryczko, K.; Misiewicz, J.; Weih, R.; Höfling, S.; Kamp, M.; Patriarche, G.

    2013-12-14

    Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

  9. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    NONE

    2009-01-15

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  10. Pressure dependence of donor excitation spectra in AlSb

    SciTech Connect (OSTI)

    Hsu, L.; McCluskey, M.D.; Haller, E.E.

    2002-01-16

    We have investigated the behavior of ground to bound excited-state electronic transitions of Se and Te donors in AlSb as a function of hydrostatic pressure. Using broadband far-infrared Fourier transform spectroscopy, we observe qualitatively different behaviors of the electronic transition energies of the two donors. While the pressure derivative of the Te transition energy is small and constant, as might be expected for a shallow donor, the pressure derivatives of the Se transition energies are quadratic and large at low pressures, indicating that Se is actually a deep donor. In addition, at pressures between 30 and 50 kbar, we observe evidence of an anti-crossing between one of the selenium electronic transitions and a two-phonon mode.

  11. Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Nontapot, K.; Kini, R. N.; Gifford, A.; Merritt, T. R.; Khodaparast, G. A.; Wojtowicz, T.; Liu, X.; Furdyna, J. K. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2007-04-02

    The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.

  12. EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX

    Broader source: Energy.gov [DOE]

    This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

  13. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the same acid stoichiometric factor. The slow acid addition in MCU seemed to alter the reactions that consumed the small excess acid present such that hydrogen generation was promoted relative to sludge-only processing. The coupled test reached higher wt.% total solids, and this likely contributed to the SME cycle hydrogen limit being exceeded at 110% KMA. It is clear from the trends in the SME processing GC data, however, that the frit slurry formic acid contributed to driving the hydrogen generation rate above the SME cycle limit. Hydrogen generation rates after the second frit addition generally exceeded those after the first frit addition. SRAT formate loss increased with increasing acid stoichiometry (15% to 35%). A substantial nitrate gain which was observed to have occurred after acid addition (and nitrite destruction) was reversed to a net nitrate loss in runs with higher acid stoichiometry (nitrate in SRAT product less than sum of sludge nitrate and added nitric acid). Increased ammonium ion formation was also indicated in the runs with nitrate loss. Oxalate loss on the order 20% was indicated in three of the four acid stoichiometry runs and in the coupled flowsheet run. The minimum acid stoichiometry run had no indicated loss. The losses were of the same order as the official analytical uncertainty of the oxalate concentration measurement, but were not randomly distributed about zero loss, so some actual loss was likely occurring. Based on the entire set of SB7b test data, it is recommended that DWPF avoid concentrating additional sludge solids in single SRAT batches to limit the concentrations of noble metals to SB7a processing levels (on a grams noble metal per SRAT batch basis). It is also recommended that DWPF drop the formic acid addition that accompanies the process frit 418 additions, since SME cycle data showed considerable catalytic activity for hydrogen generation from this additional acid (about 5% increase in stoichiometry occurred from the frit formic acid). Frit 418 also does not appear to need formic acid addition to prevent gel formation in

  14. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  15. Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation 

    E-Print Network [OSTI]

    Im, Jae-taek

    2009-05-15

    The purpose of this work was to study learn about grain refinement mechanisms and texture development in cast n-type Bi90Sb10 alloy caused by severe plastic deformation. The practical objective is to produce a fine grained ...

  16. Pulling of 3 mm diameter AlSb rods by micro-pulling down method

    E-Print Network [OSTI]

    Bourret-Courchesne Ph.D., Edith

    2009-01-01

    SUBCONTRACT #6836278 Pulling of 3 mm diameter AlSb rods by1 cm long, and at least 3 mm in diameter. provided by LBNL.l Crucible Power/T° Speed (mm/min) Seed Results Crucible

  17. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  18. Thermoelectric properties of AgSbTe? from first-principles calculations

    SciTech Connect (OSTI)

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe? are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3?m and trigonal R3?m structures of AgSbTe? are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe? compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe? as a function of temperature and carrier concentration.

  19. Solvothermal synthesis of graphene-Sb{sub 2}S{sub 3} composite and the degradation activity under visible light

    SciTech Connect (OSTI)

    Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007 ; Jiang, Kai; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Graphene-Sb{sub 2}S{sub 3} composites were synthesized through a facile solvothermal method. ? Hydroxyl radicals are the main species responsible for the photodegradation activity. ? Graphene-Sb{sub 2}S{sub 3} demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb{sub 2}S{sub 3} (G-Sb{sub 2}S{sub 3}) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl{sub 3} and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb{sub 2}S{sub 3} nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb{sub 2}S{sub 3} particles size and efficient electrons transfer from Sb{sub 2}S{sub 3} to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb{sub 2}S{sub 3} 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb{sub 2}S{sub 3} nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (·OH) derived from conduction band (CB) electrons of Sb{sub 2}S{sub 3} is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb{sub 2}S{sub 3} 0.1 an applicable photocatalyst.

  20. The magnetic structure of EuCu2Sb2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, themore »refined Eu magnetic moment at 0.4 K is 7.08(15) ?B which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.« less

  1. Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2015-02-17

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore »the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. High pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  2. Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

    2011-09-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

  3. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  4. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  5. Electron Scattering in InSb Quantum Wells due to Micro-twin Defects

    SciTech Connect (OSTI)

    Mishima, T. D.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

    2011-12-26

    The transport electron scattering due to micro-twin (MT) defects in InSb quantum wells (QWs) has been investigated at room temperature (RT). A linear-regression-based scattering analysis showed that Matthiessen's rule is applicable to the RT electron mobility in 20-nm-thick InSb QWs that contain MTs (whose density is 5.6x10{sup 2}-1.2x10{sup 4} /cm) and threading dislocations (8.7x10{sup 8}-3.2x10{sup 9} /cm{sup 2}) as dominant structural defects. For such an InSb QW whose local electron mobility in its non-MT regions is 2.8x10{sup 4}-4.5x10{sup 4} cm{sup 2}/(Vs), the MT-originated energy barrier against the electron transport is deduced to be 0.081-0.093 eV at RT.

  6. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect (OSTI)

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.5–5?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  7. Behavior Observation Lab Equipment Manual Room SB208 04/16/14 Behavior Science Core, CHDD, University of Washington 1

    E-Print Network [OSTI]

    Behavior Observation Lab Equipment Manual Room SB208 04/16/14 Behavior Science Core, CHDD visit or out of town researcher is scheduled to be in the lab. #12;Behavior Observation Lab Equipment the breeze from moving the shade out of it's track. #12;Behavior Observation Lab Equipment Manual Room SB208

  8. Stress relief from reconstructions on SbSi,,001... Yao He, X. H. Zhang, and J. G. Che*

    E-Print Network [OSTI]

    Che, Jingguang

    Stress relief from reconstructions on SbŐSi,,001... Yao He, X. H. Zhang, and J. G. Che* Surface; revised manuscript recieved 15 April 2002; published 11 November 2002 The structures and stress of the Sb)2 1 surface is found to be under a tensile stress of 1.0 eV/(1 1 cell along the dimer bond

  9. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30

    The Department of Energy – Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft® Excel® spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel® spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  10. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  11. A new method based on Markov chains for deriving SB2 orbits directly from their spectra

    E-Print Network [OSTI]

    Salomon, J -B; Guillout, P; Halbwachs, J -L; Arenou, F; Famaey, B; Lebreton, Y; Mazeh, T; Pourbaix, D; Tal-Or, L

    2012-01-01

    We present a new method to derive orbital elements of double-lined spectroscopic binaries (SB2). The aim is to have accurate orbital parameters of a selection of SB2 in order to prepare the exploitation of astrometric Gaia observations. Combined with our results, they should allow one to measure the mass of each star with a precision of better than 1%. The new method presented here consists of using the spectra at all epochs simultaneously to derive the orbital elements without templates. It is based on a Markov chain including a new method for disentangling the spectra.

  12. Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV

    E-Print Network [OSTI]

    Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV modules 1 must be listed on the SB1 for adding PV modules to the SB1 list is as follows: 1 . Data submitted to the Energy Commission

  13. Properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films obtained by pulsed laser ablation

    SciTech Connect (OSTI)

    Virt, I. S.; Rudyj, I. O.; Kurilo, I. V.; Lopatynskyi, I. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Potera, P.; Luka, G.

    2013-07-15

    The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.

  14. Masses of the components of SB2 binaries observed with Gaia. I. Selection of the sample and mass ratios of 20 new SB2s discovered with Sophie

    E-Print Network [OSTI]

    Halbwachs, Jean-Louis; Pourbaix, Dimitri; Famaey, Benoît; Guillout, Patrick; Lebreton, Yveline; Salomon, Jean-Baptiste; Tal-Or, Lev; Ibata, Rodrigo; Mazeh, Tsevi

    2014-01-01

    In anticipation of the Gaia astrometric mission, a large sample of spectroscopic binaries is being observed since 2010 with the Sophie spectrograph at the Haute--Provence Observatory. Our aim is to derive the orbital elements of double-lined spectroscopic binaries (SB2s) with an accuracy sufficient to finally obtain the masses of the components with relative errors as small as 1% when the astrometric measurements of Gaia are taken into account. Simultaneously, the luminosities of the components in the Gaia photometric band G will also be obtained. Our observation program started with 200 SBs, including 152 systems that were only known as single-lined. Thanks to the high efficiency of the Sophie spectrograph, an additional component was found for 25 SBs. After rejection of 5 multiple systems, 20 new SB2s were retained, including 8 binaries with evolved primary, and their mass ratios were derived. Our final sample contains 68 SB2s, including 2 late-type giants and 10 other evolved stars.

  15. Qifeng Zhang, Xiaoyuan Zhou, Christopher S. Dandeneau, Kwangsuk Park, Supan Yodyingyong, Guozhong Cao* Materials Science and Engineering, University of Washington, Seattle, WA 98195

    E-Print Network [OSTI]

    Cao, Guozhong

    for energy-conversion-efficiency enhancement in dye-sensitized solar cells. Advanced Functional Materials Cao* Materials Science and Engineering, University of Washington, Seattle, WA 98195 Abstract nanostructures with organic polymer materials. 3. Other Nanostructures with Potential Application in Solar Cells

  16. A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR EXPERIMENTS WITH ULTRACOLD The Department of Physics and Astronomy, Washington State University, Pullman, WA, USA, invites

    E-Print Network [OSTI]

    Collins, Gary S.

    A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR EXPERIMENTS WITH ULTRACOLD ATOMS The Department of Physics and Astronomy, Washington State University, Pullman, WA, USA, invites applications and the salary will be commensurate with experience and qualifications. ATOMIC PHYSICS GROUP AT WASHINGTON STATE

  17. College of Arts and Sciences Box 353765 University of Washington Seattle, WA 98195-3765 phone: (206) 543-5340 www.artsci.washington.edu

    E-Print Network [OSTI]

    Matrajt, Graciela

    College of Arts and Sciences · Box 353765 · University of Washington · Seattle, WA 98195-3765 phone: (206) 543-5340 · www.artsci.washington.edu The University of Washington College of Arts and Sciences class is from Washington state Academic and research faculty (FTE, 2012 average) A&S faculty have

  18. www.ce.washington.edu 201 More Hall, Box 352700, Seattle, WA 98195 Phone (206) 543-5092 ceadvice@uw.edu CIVIL & ENVIRONMENTAL ENGINEERING

    E-Print Network [OSTI]

    www.ce.washington.edu 201 More Hall, Box 352700, Seattle, WA 98195 Phone (206) 543-5092 ceadvice. To apply for the Departmental Honors program: Complete the Honors Departmental invitation form at http://depts.washington to make the course more rigorous and extensive. Download the Ad Hoc Honors form at http://depts.washington

  19. Department of Biology Box 351800 University of Washington Seattle, WA 98195-1800 phone: (206) 543-1620 fax: (206) 543-3041 www.biology.washington.edu

    E-Print Network [OSTI]

    Shlizerman, Eli

    Department of Biology · Box 351800 · University of Washington · Seattle, WA 98195-1800 phone: (206) 543-1620 · fax: (206) 543-3041 · www.biology.washington.edu Education With over 1,700 undergraduate majors, the Department of Biology is the largest under- graduate degree program at the University

  20. NIFES Consulting Group, NIFES House, Sinderland Road, Broadheath, Altrincham, Cheshire, WA14 5HQ Tel: 0161 928 5791 | Fax: 0161 926 8718| www.nifes.co.uk

    E-Print Network [OSTI]

    NIFES Consulting Group, NIFES House, Sinderland Road, Broadheath, Altrincham, Cheshire, WA14 5HQ Tel: 0161 247 1408 E-mail: j.hindley@mmu.ac.uk Prepared by: Mr S. Elkin NIFES Consulting Group, NIFES considered for implementation at the campus. However the seven year payback criteria communicated to NIFES

  1. Corinna Cisneros, S.M. Golam Mortuza, and Soumik Banerjee School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99163

    E-Print Network [OSTI]

    Collins, Gary S.

    community to develop renewable energy technologies. Solar cell technology has generated significant on the tops of carport canopies, bus stops and large buildings. Specifically, organic photovoltaic (OPV) solar Engineering, Washington State University, Pullman, WA 99163 Organic Photovoltaic Solar Cells: A Molecular

  2. 5.12 Ocean-Derived Aerosol and Its Climate Impacts PK Quinn and TS Bates, NOAA Pacific Marine Environmental Laboratory, Seattle, WA, USA

    E-Print Network [OSTI]

    5.12 Ocean-Derived Aerosol and Its Climate Impacts PK Quinn and TS Bates, NOAA Pacific Marine Environmental Laboratory, Seattle, WA, USA Published by Elsevier Ltd. 5.12.1 Introduction 317 5.12.2 Ocean-Derived Aerosol Production Mechanisms 317 5.12.3 Radiative Effects of Ocean-Derived Aerosol 319 5.12.3.1 Aerosol

  3. Journal of Crystal Growth 304 (2007) 399401 Growth of high quality, epitaxial InSb nanowires

    E-Print Network [OSTI]

    Wang, Zhong L.

    2007-01-01

    Journal of Crystal Growth 304 (2007) 399­401 Growth of high quality, epitaxial InSb nanowires Hyun, Washington, DC. 20375, USA b School of Materials Science and Engineering, Georgia Institute of Technology March 2007 Communicated by R.M. Biefeld Available online 1 April 2007 Abstract The growth of In

  4. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  5. John von Neumann Institute for Computing Structural Patterns in Ge/Sb/Te Phase-Change

    E-Print Network [OSTI]

    of the phases involved and the nature of the phase transition in the nanoscale bits pose continuing challenges square'. The rapid amorphous- to-crystalline phase change can be viewed as a re-orientation of disorderedJohn von Neumann Institute for Computing Structural Patterns in Ge/Sb/Te Phase-Change Materials J

  6. Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

    2011-03-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

  7. Artificial Markets and Intelligent Agents S.B. Massachusetts Institute of Technology (1995)

    E-Print Network [OSTI]

    Poggio, Tomaso

    1995-01-01

    Artificial Markets and Intelligent Agents by Tung Chan S.B. Massachusetts Institute of Technology. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Arthur C. Smith Chairman, Departmental Committee on Graduate Students #12;#12;Artificial Markets and Intelligent Agents by Tung Chan Submitted to the Department of Electrical Engineering and Computer Science

  8. Colorado State Forest Service SB09-020 --Responsibility for Responding to Wildland Fires

    E-Print Network [OSTI]

    Colorado State Forest Service SB09-020 -- Responsibility for Responding to Wildland Fires Summary, and the Colorado State Forest Service in responding to wildland fires. This legislation organizes the roles Forest Service may assist the sheriff in controlling or extinguishing such fires, and may assume command

  9. The radiation chemistry of Cs-7SB, a solvent modifier used in Cs and Sr extraction

    SciTech Connect (OSTI)

    Mincher, B.J.; Martin, L.R.; Elias, G.; Mezyk, S.P.

    2008-07-01

    The solvent modifier 1-(2,2,3,3-tetrafluoro-propoxy)-3-(4-sec-butylphenoxy)-2-propanol, (Cs- 7SB) is used in conjunction with calixarenes and crown ethers dissolved in alkane diluents for the extraction of Cs and Sr from highly radioactive solutions. Its purpose is to solvate the ligands and the resulting ligand-metal complexes in the organic phase. Given this role, and its relatively high concentration in the formulations used for solvent extraction, radiolytic degradation of Cs-7SB might decrease the extraction efficiency of these elements as the solvent accumulates absorbed radiation dose. This work presents the results of studies of Cs-7SB using post-radiolysis gas chromatography with electron-capture detection and solvent-extraction distribution-ratio measurements. Also presented is the kinetic analysis of the bimolecular rate constant for the modifier's reaction with nitrogen trioxide and nitrogen dioxide radicals, major radiolytically-produced radical species in irradiated aqueous nitric acid. Although Cs-7SB was found to undergo reactions with nitrogen-centered radicals, little decrease in extraction efficiency was found. It is concluded the modifier, always present at concentrations much higher than the ligands, acts as a radical scavenger, protecting ligands from radiolytic attack. (authors)

  10. Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates

    SciTech Connect (OSTI)

    Nguyen, Thang; Varhue, Walter; Cross, Michael; Pino, Robinson; Adams, Edward; Lavoie, Mark; Lee, Jaichan [School of Engineering, University of Vermont, Burlington, Vermont 05405 (United States); IBM Corporation, Essex Junction, Vermont 05452 (United States); Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746 (Korea, Republic of)

    2007-04-01

    This paper describes the structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. The growth process used a combination of atomic sources which included the rf sputtering of Sb and the thermal effusion of Ga. The formation of crystalline GaSb thin films required that initially a monolayer thick Sb buffer layer be applied directly to a clean H-passivated Si(111) substrate surface. The resulting film was characterized by high resolution x-ray diffraction, Rutherford backscattering spectrometry, transmission electron microscopy, secondary ion mass spectroscopy, and atomic force microscopy (AFM). The AFM images were taken from the material after several periods of growth to determine the evolution of crystal structure with thickness. Atomic force microscopy images of the film surface showed that the heteroepitaxial layers were formed via the Stranski-Krastanov growth mechanism. This result is consistent with the heteroepitaxial growth of systems representing large differences in lattice constant. The hole mobility and carrier concentration in the deposited material were determined by the Hall measurement, performed at room temperature and on a 140 nm thick sample, to be 66 cm{sup 2}/V sec and 3x10{sup 19} cm{sup -3}, respectively. The carrier mobility was relatively low as expected for measurements taken at room temperature.

  11. Planning for sustainable communities: Regional incentives and local policy under SB375

    E-Print Network [OSTI]

    California at Davis, University of

    -Claudia Sciara, Ph.D., AICP Urban Land Use and Transportation Center University of California, Davis Policy Institute Policy for Energy, Environment and the Economy University of California, Davis March 19, 2014Sacramento Los Angeles S.F. Bay Area Land use component of regional transportation plans #12;2013 SB375

  12. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect (OSTI)

    Bannochie, C.; Click, D.

    2010-01-06

    A sample of Sludge Batch 5 (SB5) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for chemical composition including noble metals. Prior to radionuclide inventory analyses, a final sample of the H-canyon Np stream will be added to bound the Np addition anticipated for Tank 40. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB5. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB5 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 239 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four in Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Additionally, other alkali metals, such as Li and K that may be contaminants in the Na{sub 2}O{sub 2} are not determined from this preparation. Three Analytical Reference Glass - 14 (ARG-1) standards were digested along with a blank for each preparation. The ARG-1 glass allows for an assessment of the completeness of each digestion. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICPAES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis of masses 81-209 and 230-252, and cold vapor atomic absorption (CV-AA) analysis for Hg. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB5 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. The following conclusions were drawn from the analytical results reported here: (1) The elemental ratios of the major elements for the SB5 WAPS sample, whose major Tank 51 Qualification sample component underwent Al dissolution, are similar to those measured for the SB4 WAPS sample. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. (3) Fifty percent of the sulfur in the SB5 WAPS sample is insoluble, and this represents a significantly larger fraction than that observed in previous sludge batches. (4) The noble metal and Ag concentrations predicted from the measured values for the Tank 51 Confirmation sample and Tank 40 SB4 WAPS sample using a two-thirds Tank 51, one-third Tank 40 heel blend ratio used to arrive at the final SB5 composition, agree with the values for the Tank 40 SB5 WAPS sample measured for this report.

  13. Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA

    E-Print Network [OSTI]

    J. Diaz Leon; D. A. Jaffe; J. Kaspar; A. Knecht; M. L. Miller; R. G. H. Robertson; A. G. Schubert

    2011-08-23

    We report results of air monitoring started due to the recent natural catastrophe on 11 March 2011 in Japan and the severe ensuing damage to the Fukushima Dai-ichi nuclear reactor complex. On 17-18 March 2011, we registered the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. We measured the evolution of the activities over a period of 23 days at the end of which the activities had mostly fallen below our detection limit. The highest detected activity amounted to 4.4 +/- 1.3 mBq/m^3 of 131-I on 19-20 March.

  14. Evaluation of contaminant flux rates from sediments of Sinclair Inlet, WA, using a benthic flux sampling device. Final report

    SciTech Connect (OSTI)

    Chadwick, D.B.; Lieberman, S.H.; Reimers, C.E.; Young, D.

    1993-02-01

    A Benthic Flux Sampling Device (BFSD) was demonstrated on site to determine the mobility of contaminants in sediments off the Puget Sound Naval Shipyard (PSNS) in Sinclair Inlet, WA. Quantification of toxicant flux from the sediments will support ongoing assessment studies and facilitate the design of appropriate remediation strategies, if required. In general, where release of contaminants was found, the measured rates do not represent a significant source relative to other major inputs such as sewer discharges, nonpoint source runoff, and marinas. They may, however, represent an exposure pathway for benthic biota with a subsequent potential for toxicological effects and/or bioaccumulation. Environmental assessment, CIVAPP:Toxicity, CIVAPP:Marine chemistry, Hazardous waste.

  15. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  16. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, Aritra; Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 ; Mandal, P.; Srihari, Velaga

    2013-12-09

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  17. Growth, strain relaxation properties and high-? dielectric integration of mixed-anion GaAs{sub 1-y}Sb{sub y} metamorphic materials

    SciTech Connect (OSTI)

    Zhu, Y.; Clavel, M.; Goley, P.; Hudait, M. K., E-mail: mantu.hudait@vt.edu [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2014-10-07

    Mixed-anion, GaAs{sub 1-y}Sb{sub y} metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs{sub 1-y}Sb{sub y} materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs{sub 1-y}Sb{sub y}. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs{sub 1-y}Sb{sub y} structures. Selected high-? dielectric materials, Al{sub 2}O{sub 3}, HfO{sub 2}, and Ta{sub 2}O{sub 5} were deposited using atomic layer deposition on the GaAs{sub 0.38}Sb{sub 0.62} material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs{sub 0.38}Sb{sub 0.62}, indicating the potential of utilizing these dielectrics on GaAs{sub 0.38}Sb{sub 0.62} for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al{sub 2}O{sub 3} and HfO{sub 2} showed a conduction band offset of >2 eV on GaAs{sub 0.38}Sb{sub 0.62}, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs{sub 1-y}Sb{sub y} material systems and the detailed band alignment analysis of multiple high-? dielectric materials on a fixed Sb composition, GaAs{sub 0.38}Sb{sub 0.62}, provides a pathway to utilize GaAs{sub 1-y}Sb{sub y} materials in future microelectronic and optoelectronic applications.

  18. Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses 

    E-Print Network [OSTI]

    Burzo, Andrea Mihaela

    2001-01-01

    The present work is motivated in part by the increasing interest in a better understanding of the optical properties of InSb, the main material used to manufacture infrared detectors. In addition, there have been recent ...

  19. Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion

    SciTech Connect (OSTI)

    Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2014-12-15

    Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.5–5 nm.

  20. Surface alloy model of p(2 2)Sb/Cu(001) from LEED I/V data Shougo Higashi a

    E-Print Network [OSTI]

    Saldin, Dilano

    Surface alloy model of p(2 Â 2)Sb/Cu(001) from LEED I/V data Shougo Higashi a , Hiroshi Tochihara 2008 Keywords: Surface structure Metallic surfaces LEED Chemisorption a b s t r a c t We report on the re-determination of the structure of p(2 Â 2)Sb/Cu(001) from measured LEED I/V data. The structure

  1. Reprinted from SPIE Vol. 881-optical Computing and Nonlinear Materials o 1988 by the Society of Photo-Optical Instrumentation Engineers. Box 10, Bellingham. WA 98227-0010 USA

    E-Print Network [OSTI]

    Fossum, Eric R.

    of Photo-Optical Instrumentation Engineers. Box 10, Bellingham. WA 98227-0010 USA Direct backside has recently developed. A critical aspect of optical interconnection is the physical coupling between

  2. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  3. Time resolved magneto-optical studies of ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Frazier, M.; Kini, R. N.; Nontapot, K.; Khodaparast, G. A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences 02-668 Warsaw (Poland); Liu, X.; Furdyna, J. K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2008-02-11

    We report time resolved magneto-optical measurements in InMnSb ferromagnetic films with 2% and 2.8% Mn contents grown by low temperature molecular beam epitaxy. In order to probe a possible interaction between the spins of photoexcited carriers and the Mn ions, we measured spin dynamics before and after aligning the Mn ions by applying an external magnetic field at temperatures above and below the samples' Curie temperatures. We observed no significant temperature or magnetic field dependence in the relaxation times and attribute the observed dynamics entirely to the relaxation of photoexcited electrons in the conduction band where the s-d coupling with the localized Mn ions is significantly weaker compared to the p-d exchange coupling. We observed several differences in the optical response of our InMnSb samples which could have been influenced mainly by the samples' growth conditions.

  4. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect (OSTI)

    Keizer, J. G.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Ulloa, J. M.; Utrilla, A. D. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  5. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  6. Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    to the substrate, and produced Sb2Se3 thin-film solar cells with a certified device efficiency of 5.6%. Our results are one of the major limiting factors for high-efficiency thin-film solar cells. We began with first cells based on inorganic absorbers, such as Si, GaAs, CdTe and Cu(In,Ga)Se2, permit a high device

  7. Terahertz emission from Ga1-xInxSb Ricardo Ascazubi and Ingrid Wilke

    E-Print Network [OSTI]

    Wilke, Ingrid

    by semiconductor properties. Narrow direct band gap semiconductors such as InAs Eg=0.35 eV ,8­16 and InN Eg=0.68 eInxSb with 0 x 1. THz emission is excited by femtosecond near-infrared laser pulses. For this material system as a result of carrier compensation NA NB for this specific material composition. The THz emission from n

  8. Bi flux-dependent MBE growth of GaSbBi alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

    2015-09-01

    The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 ?m h?ą). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0more »with a reduction of ~32 meV/%Bi.« less

  9. Electronic structure of rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) by X-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Crerar, Shane J. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada); Grosvenor, Andrew P. [Department of Chemistry, University of Saskatchewan, Saskatoon, Saskatchewan, Canada S7N 5C9 (Canada)] [Department of Chemistry, University of Saskatchewan, Saskatoon, Saskatchewan, Canada S7N 5C9 (Canada)

    2012-12-15

    The electronic structure of the ternary rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) has been examined by high-resolution X-ray photoelectron spectroscopy (XPS) for the first time. The RE 3d or 4d core-line spectra are substantially complicated by the presence of satellite peaks but their general resemblance to those of RE{sub 2}O{sub 3} tends to support the presence of trivalent RE atoms in RECrSb{sub 3}. However, the Yb 4d spectrum of YbCrSb{sub 3} also shows peaks that are characteristic of divalent ytterbium. The Cr 2p core-line spectra exhibit asymmetric lineshapes and little change in binding energy (BE) relative to Cr metal, providing strong evidence for electronic delocalization. The Sb 3d core-line spectra reveal slightly negative BE shifts relative to elemental antimony, supporting the presence of anionic Sb species in RECrSb{sub 3}. The experimental valence band spectrum of LaCrSb{sub 3} matches well with the calculated density of states, and it can be fitted to component peaks belonging to individual atoms to yield an average formulation that agrees well with expectations ('La{sup 3+}Cr{sup 3+}(Sb{sup 2-}){sub 3}'). On progressing from LaCrSb{sub 3} to NdCrSb{sub 3}, the 4f-band in the valence band spectra grows in intensity and shifts to higher BE. The valence band spectrum for YbCrSb{sub 3} also supports the presence of divalent ytterbium. - Graphical Abstract: In their valence band spectra, the 4f-band intensifies and shifts to higher BE on progressing from LaCrSb{sub 3} to NdCrSb{sub 3}. Highlights: Black-Right-Pointing-Pointer High-resolution core-line and valence band XPS spectra were measured for RECrSb{sub 3}. Black-Right-Pointing-Pointer Divalent Yb is present in YbCrSb{sub 3}, in contrast to trivalent RE in other members. Black-Right-Pointing-Pointer Asymmetric Cr 2p spectral lineshape confirms delocalization of Cr valence electrons. Black-Right-Pointing-Pointer Small negative Sb 3d BE shifts support assignment of anionic Sb atoms. Black-Right-Pointing-Pointer Fitted valence band spectra show shifts in the 4f band as RE is changed.

  10. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect (OSTI)

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24?eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (?51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8?T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  11. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  12. Strong H...F hydrogen bonds as synthons in polymeric quantum magnets: structural, magnetic, and theoretical characterization of [Cu(HF)(pyrazine)]SbF, [CuF(HF)(FH)(pyrazine)].(SbF), and [CuAg(HF)(pyrazine)](SbF).

    SciTech Connect (OSTI)

    Manson, J. L.; Schlueter, J. A.; Funk, K. A.; Southerland, H. I.; Twamley, B.; Lancaster, T.; Blundell, S. J.; Baker, P. J.; Pratt, F. L.; Singleton, J.; McDonald, R. D.; Goddard, P. A.; Sengupta, P.; Batista, C. D.; Ding, L.; Lee, C.; Whangbo, M.-H.; Franke, I.; Cox, S.; Baines, C.; Trail, D.; Eastern Washington Univ.; Univ. of Idaho; Oxford Univ.; Rutherford Appleton Lab.; LANL; Univ. of Southern California; North Carolina State Univ.; Paul Scherrer Inst.

    2009-01-01

    Three Cu{sup 2+}-containing coordination polymers were synthesized and characterized by experimental (X-ray diffraction, magnetic susceptibility, pulsed-field magnetization, heat capacity, and muon-spin relaxation) and electronic structure studies (quantum Monte Carlo simulations and density functional theory calculations). [Cu(HF{sub 2})(pyz){sub 2}]SbF{sub 6} (pyz = pyrazine) (1a), [Cu{sub 2}F(HF)(HF{sub 2})(pyz){sub 4}](SbF{sub 6}){sub 2} (1b), and [CuAg(H{sub 3}F{sub 4})(pyz){sub 5}](SbF{sub 6}){sub 2} (2) crystallize in either tetragonal or orthorhombic space groups; their structures consist of 2D square layers of [M(pyz){sub 2}]{sup n+} that are linked in the third dimension by either HF{sub 2}{sup -} (1a and 1b) or H{sub 3}F{sub 4}{sup -} (2). The resulting 3D frameworks contain charge-balancing SbF{sub 6}{sup -} anions in every void. Compound 1b is a defective polymorph of 1a, with the difference being that 50% of the HF{sub 2}{sup -} links are broken in the former, which leads to a cooperative Jahn-Teller distortion and d{sub x{sup 2}-y{sup 2}} orbital ordering. Magnetic data for 1a and 1b reveal broad maxima in x at 12.5 and 2.6 K and long-range magnetic order below 4.3 and 1.7 K, respectively, while 2 displays negligible spin interactions owing to long and disrupted superexchange pathways. The isothermal magnetization, M(B), for 1a and 1b measured at 0.5 K reveals contrasting behaviors: 1a exhibits a concave shape as B increases to a saturation field, B{sub c}, of 37.6 T, whereas 1b presents an unusual two-step saturation in which M(B) is convex until it reaches a step near 10.8 T and then becomes concave until saturation is reached at 15.8 T. The step occurs at two-thirds of M{sub sat}, suggesting the presence of a ferrimagnetic structure. Compound 2 shows unusual hysteresis in M(B) at low temperature, although x vs T does not reveal the presence of a magnetic phase transition. Quantum Monte Carlo simulations based on an anisotropic cubic lattice were applied to the magnetic data of 1a to afford g = 2.14, J = ?13.4 K (Cu-pyz-Cu), and J = ?0.20 K (Cu?F {hor_ellipsis} H {hor_ellipsis} F?Cu), while x vs T for 1b could be well reproduced by a spin-1/2 Heisenberg uniform chain model for g = 2.127(1), J{sub 1} = ?3.81(1), and zJ{sub 2} = ?0.48(1) K, where J{sub 1} and J{sub 2} are the intra- and interchain exchange couplings, respectively, which considers the number of magnetic nearest-neighbors (z). The M(B) data for 1b could not be satisfactorily explained by the chain model, suggesting a more complex magnetic structure in the ordered state and the need for additional terms in the spin Hamiltonian. The observed variation in magnetic behaviors is driven by differences in the H {hor_ellipsis} F hydrogen-bonding motifs.

  13. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  14. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877?×?10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112?×?10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  15. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  16. Structural and optical studies on AgSbSe{sub 2} thin films

    SciTech Connect (OSTI)

    Asokan, T. Namitha; Urmila, K. S.; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi- 22, Kerala (India)

    2014-01-28

    AgSbSe{sub 2} semiconducting thin films are successfully deposited using reactive evaporation technique at a substrate temperature of 398K. X-ray diffraction studies reveal that the films are polycrystalline in nature. The structural parameters such as average particle size, dislocation density, and number of crystallites per unit have been evaluated. Atomic Force Microscopy is used to study the topographic characteristics of the film including the grain size and surface roughness. The silver antimony selenide thin films have high absorption coefficient of about 10{sup 5} cm{sup ?1} and it has an indirect band gap of 0.64eV.

  17. Controlling SEI Formation on SnSb-Porous Carbon Nanofibers for Improved Na Ion Storage

    SciTech Connect (OSTI)

    Ji, Liwen; Gu, Meng; Shao, Yuyan; Li, Xiaolin; Engelhard, Mark H.; Arey, Bruce W.; Wang, Wei; Nie, Zimin; Xiao, Jie; Wang, Chong M.; Zhang, Jiguang; Liu, Jun

    2014-05-14

    Porous carbon nanofiber (CNF)-supported tin-antimony (SnSb) alloys is synthesized and applied as sodium ion battery anode. The chemistry and morphology of the solid electrolyte interphase (SEI) film and its correlation with the electrode performance are studied. The addition of fluoroethylene carbonate (FEC) in electrolyte significantly reduces electrolyte decomposition and creates a very thin and uniform SEI layer on the cycled electrode surface which could promote the kinetics of Na-ion migration/transportation, leading to excellent electrochemical performance.

  18. TRAC-PF1/MOD1 post-test calculations of the OECD LOFT Experiment LP-SB-3

    SciTech Connect (OSTI)

    Allen, E J; Neill, A P [UKAEA Atomic Energy Establishment, Winfrith (UK)

    1990-04-01

    Analysis of the small, cold leg break, OECD LOFT Experiment LP-SB-3 using the best-estimate computer code TRAC-PF1/MOD1 is presented. Descriptions of the LOFT facility and the LP-SB-3 experiment are given and development of the TRAC-PF1/MOD1 input model is detailed. The calculations performed in achieving the steady state conditions, from which the experiment was initiated, and the specification of experimental boundary conditions are outlined. Results of the TRAC-PF1/MOD1 calculation are found to be generally consistent with those reported, by members of the OECD LOFT Program Review Group, in the LP-SB-3 Comparison Report.'' Overall trends with respect to pressure histories, minimum primary system mass inventory and accumulator behaviour are reasonably well reproduced by TRAC-PF1/MOD1. 17 refs., 26 figs., 3 tabs.

  19. Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning

    SciTech Connect (OSTI)

    Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

    2012-03-15

    Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

  20. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

    SciTech Connect (OSTI)

    Ushanov, V. I.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)] [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2013-08-15

    The optical properties of metal-semiconductor metamaterials based on an AlGaAs matrix are studied. The specific feature of these materials is that there are As and AsSb nanoinclusion arrays which modify the dielectric properties of the material. These nanoinclusions are randomly arranged in the medium or form a Bragg structure with a reflectance peak at a wavelength close to 750 nm, corresponding to the transparency region of the matrix. The reflectance spectra are studied for s- and p-polarized light at different angles of incidence. It is shown that (i) As nanoinclusion arrays only slightly influence the optical properties of the medium in the wavelength range 700-900 nm, (ii) chaotic AsSb nanoinclusion arrays cause strong scattering of light, and (iii) the spatial periodicity in the arrangement of AsSb nanoinclusions is responsible for Bragg resonance in the optical reflection.

  1. Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires

    E-Print Network [OSTI]

    Wang, Xudong

    Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries of WisconsinMadison, Madison, Wisconsin 53706, United States ABSTRACT: We report that Sb-decorated head-to-head-type dopant due to low dopant solubility, native donor defects, and large acceptor ionization energies has

  2. GaSb-based Type-I QW LEDs and addressable arrays operated at wavelengths up to 3.66 m

    E-Print Network [OSTI]

    Sb-based quantum wells (QW) light emitting diodes (LED) and LED arrays operating at room temperature at wavelengths. Kipshidze, D.Westerfeld, D. Snyder, M.Johnson, G. Belenky, "GaSb-Based Type I Quantum Well Light Emitting Diode Addressable Array Operated at Wavelengths up to 3.66 µm", IEEE Photonics Technol. Lett. 21, 1087

  3. J. Phys.: Condens. Matter 8 (1996) 41894193. Printed in the UK Angle-resolved photoemission of InSb(111)2 2

    E-Print Network [OSTI]

    Kim, Sehun

    1996-01-01

    Abstract. The electronic band structure of InSb(111) along the ­ ­L 111 direction was determined using structures of GaAs(111)­2 × 2 surfaces was also carried out to determine the atomic geometry [7, 8]. However to the surface state and the resonance process of the InSb(111)­2 × 2. Investigations of electronic properties

  4. Stibioclaudetite is a new mineral species with ideal chemistry AsSbO3. The symmetry is monoclinic, P21/n, with a 5 4.5757(4) ,

    E-Print Network [OSTI]

    Downs, Robert T.

    AbstrAct Stibioclaudetite is a new mineral species with ideal chemistry AsSbO3. The symmetry, colorless transparent bladed crystals to 6 mm, bound by {010}, {110}, {111}, and {101}. The mineral of stibioclaudetite, claudetite, and leiteite are presented and compared. Stibioclaudetite AsSbO3 A New Mineral from

  5. Characterization and modeling of nanocomposite thermoelectric materials system bismuth antimony telluride ((Biy?Sb1?-?y?)2?Te3?) as a function of temperature and magnetic field

    E-Print Network [OSTI]

    Tang, Ming Y., 1979-

    2011-01-01

    This thesis looks at (BiySb1-y)2Te3 nanocomposites as an example of the currently available nano systems. In this thesis, (BiySb-y)2Te3 nanocomposites are characterized from ~325K down to ~3K. Advantages of this low ...

  6. Probing Spin-Relaxation Anisotropy in 1D InSb Wires by Weak Anti-Localization

    SciTech Connect (OSTI)

    Jayathilaka, P. A. R. D.; Cairns, S.; Keay, J.; Murphy, S. Q.; Gaspe, C. K.; Mishima, T. D.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, Center for Semiconductor Physics in Nanostructures (C-SPIN), University of Oklahoma, Norman, OK (United States)

    2011-12-26

    Arrays of quasi-one-dimensional wires were fabricated in symmetrically doped AlInSb/InSb heterostructures to investigate the dimensional suppression of electron spin relaxation. Using weak localization analysis, it was discovered that the spin relaxation length in 300nm wide wires was enhanced by 40% relative to the two-dimensional value. Moreover, wires aligned along the <100> direction showed spin relaxation lengths {approx}30% longer than for wires aligned along <110>. This anisotropy is consistent with the additional influence of the cubic Dresselhaus interaction along the <110> direction which is predicted to be unaffected by dimensional confinement.

  7. TRAC-PF1 MOD1 post test calculations of the OECD LOFT Experiment LP-SB-1

    SciTech Connect (OSTI)

    Allen, E J [UKAEA Atomic Energy Establishment, Winfrith (UK)

    1990-04-01

    Analysis of the small, hot leg break, OECD LOFT Experiment LP-SB-1. using the best-estimate'' computer code TRAC-PF1/MOD1 is presented. Descriptions of the LOFT facility and the LP-SB-1 experiment are given and development of the TRAC-PF1/MOD1 input model is detailed. The calculations performed in achieving the steady state conditions, from which the experiment was initiated, and the specification of experimental boundary conditions are outlined. 24 refs., 66 figs., 12 tabs.

  8. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility ? versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ?(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore »actual composition EuCu1.82Sb2. The ?(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the ?(T),Cp(T), and ?(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state ?(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic ?(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  9. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W. (Livermore, CA); Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong (Livermore, CA); Wu, Kuang Jen J. (Cupertino, CA)

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  10. Structural investigation on Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses using x-ray photoelectron spectra

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Xiang, Shen [College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Si-Wei; Wang, Rong-Ping, E-mail: rongping.wang@anu.edu.au [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang [Department of Applied Physics, Chongqing University, Chongqing 401331 (China)

    2014-05-14

    The structure of Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses (x?=?7.5, 10, 15, 20, 25, 27.5, 30, and 32.5 at. %) has been investigated by x-ray photoelectron spectroscopy (XPS). Different structural units have been extracted and characterized by decomposing XPS core level spectra, the evolution of the relative concentration of each structural unit indicates that, the relative contributions of Se-trimers and Se-Se-Ge(Sb) structure decrease with increasing Ge content until they become zero at chemically stoichiometric glasses of Ge{sub 25}Sb{sub 10}Se{sub 65}, and then the homopolar bonds like Ge-Ge and Sb-Sb begin to appear in the spectra. Increase of homopolar bonds will extend band-tails into the gap and narrow the optical band gap. Thus, the glass with a stoichiometric composition generally has fewer defective bonds and larger optical bandgap.

  11. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    SciTech Connect (OSTI)

    Zhao, Yu Bertru, Nicolas; Folliot, Hervé; Rohel, Tony; Mauger, Samuel J. C.; Koenraad, Paul M.

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  12. The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

    SciTech Connect (OSTI)

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Hossain, K.; Holland, O. W.

    2011-12-26

    Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

  13. The Messed up Books (Pecha Trok Wa La). A personal recollection of Samten G. Karmay and the O rgyan chos gling catalogue (Bhutan)

    E-Print Network [OSTI]

    Pommaret, Françoise

    2008-01-01

    3. A short but steep walk of 45 minutes took him in full view of the grand mansion sitting at the top of a hillock and dominating the whole sTang valley. Buckwheat fields, pine trees and little hamlets were towered to the North by the cragged... stream_source_info ret_14_02.pdf.txt stream_content_type text/plain stream_size 14898 Content-Encoding UTF-8 stream_name ret_14_02.pdf.txt Content-Type text/plain; charset=UTF-8 "THE MESSED UP BOOKS" (PECHA TROK WA LA)1. A...

  14. Comparison of a TRAC calculation to the data from LSTF run SB-CL-05

    SciTech Connect (OSTI)

    Motley, F.; Schultz, R.

    1986-01-01

    Run SB-CL-05 is a 5% break in the side of the cold leg. The test results show that the core was uncovered briefly and that the rods overheated at certain core locations. Liquid holdup on the upflow side of the steam generator tubes was observed. When the loop seal cleared, the core refilled and the rods cooled. The TRAC results are in reasonable agreement with the test data, meaning that TRAC correctly predicted the major trends and phenomena. TRAC predicted the core uncovery, the resulting rod heatup, and the liquid holdup on the upflow side of the steam generator tubes correctly. The clearing of the loop seal allowed core recovery and cooled the overheated rods just as it had in the data, but TRAC predicted its occurrence 20 s late. The experimental and TRAC analysis results of run SB-CL-05 are similar to those for Semiscale Run S-UT-8. In both runs there was core uncovery, rod overheating, and steam generator liquid holdup. These results confirm scaling of these phenomena from Semiscale (1/1650) to LSTF (1/48).

  15. Decay heat removal during SB LOCA with loss of all feedwater

    SciTech Connect (OSTI)

    Prosek, A.; Mavko, B.; Petelin, S. [Jozef Stefan Institute, Ljubljana (Slovenia). Reactor Engineering Division

    1994-12-31

    The aim of this research was to investigate decay heat removal during SB LOCA with simultaneous loss of all feedwater in a two loop PWR plant. Following a SB LOCA, the major concern is to keep the core covered assuring decay heat removal from the core thereby preventing cladding damage. Analysis was performed based on the data for Krsko NPP in Slovenia. The spectrum of break sizes in the cold leg was analyzed using the RELAP5/MOD2 code. The results indicate that when the break diameter is lower than 2.5 cm, the steam generators will dry out and the primary side bleed and feed procedure should be initiated. For break diameters between 2.5 cm to 5.1 cm the decay heat can be removed by the break flow and by relieving the steam through the steam generator relief valves. For break diameters greater than 5.1 cm the break flow is sufficient to remove all dissipated decay heat.

  16. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ? 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ? 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to themore »mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ? 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.« less

  17. 'EAITLE, WA bruary 1972

    E-Print Network [OSTI]

    · tions that review in con id rable d tail and at a high technical 11'\\"f'1 c daill "nlad an'as flf r lU70, pp., (j fig'. !J!l. ,'almon r · arch at Ice Harbor Dam. By Wesley J. Eb 1. prill 70, pp.. 4

  18. Franklin PUD, Pasco WA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming Upgrades to theGame Changers?FRANKLIN

  19. Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

    2014-03-21

    Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

  20. Bias dependent dual band response from InAs/Ga,,In...Sb type II strain layer superlattice detectors

    E-Print Network [OSTI]

    New Mexico, University of

    available readout integrated circuits. © 2007 American Institute of Physics. DOI: 10.1063/1.2824819 Infrared, University of New Mexico, Albuquerque, New Mexico 87106, USA Received 10 October 2007; accepted 23 November photodetectors based on type II InAs/Ga In Sb strain layer superlattices using an nBn heterostructure design

  1. Performance of Gd-doped Ti-based Sb-SnO2 anodes for electrochemical destruction of phenol

    E-Print Network [OSTI]

    O2 anodes (Ti/SnO2-Sb), based on their electro-catalytic activities and organic oxidation rates (Ko Available online 24 October 2007 Abstract The performance of electrodes for the electro-catalytic the elec- tro-catalytic characteristics and stability of the electrodes. Some researchers have found

  2. SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Pareizs, J.; Hay, M.

    2011-02-22

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB7 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated.

  3. Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

    SciTech Connect (OSTI)

    Mustafa, Falah I. [Solar Energy Research Center, Renewable Energy Directorate, Ministry of Science and Technology, Baghdad (Iraq); Gupta, Shikha; Goyal, N.; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh -160014 (India)

    2011-12-12

    We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

  4. Sustainable Land Management in Northern Namibia

    E-Print Network [OSTI]

    Collection, University of Oklahoma Library from the Farm Security Administration Collection US National-1880's 1933 Ecologists' role: documented degradation, recommended preventive measures (too late

  5. Bicon Namibia Consulting Engineers | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy Electricals Ltd BHEL Jump to: navigation, search Name:Bicon

  6. NGC 1266: Characterization of the Nuclear Molecular Gas in an Unusual SB0 Galaxy

    E-Print Network [OSTI]

    Glenn, Jason; Maloney, Philip R; Kamenetzky, Julia R

    2015-01-01

    With a substantial nuclear molecular gas reservoir and broad, high-velocity CO molecular line wings previously interpreted as an outflow, NGC 1266 is a rare SB$0$ galaxy. Previous analyses of interferometry, spectrally resolved low-$J$ CO emission lines, and unresolved high-$J$ emission lines have established basic properties of the molecular gas and the likely presence of an AGN. Here, new spectrally resolved CO $J = 5 - 4$ to $J = 8 - 7$ lines from {\\it Herschel Space Observatory} HIFI observations are combined with ground-based observations and high-$J$ {\\it Herschel} SPIRE observations to decompose the nuclear and putative outflow velocity components and to model the molecular gas to quantify its properties. Details of the modeling and results are described, with comparisons to previous results and exploration of the implications for the gas excitation mechanisms. Among the findings, like for other galaxies, the nuclear and putative outflow molecular gas are well represented by components that are cool ($...

  7. RELAP5 simulation of SB LOCA in a VVER 440 model

    SciTech Connect (OSTI)

    Parzer, I.; Mavko, B.; Petelin, S.

    1992-01-01

    The VVER-440-type plants differ considerably from western-type pressurized water reactors (PWR). The two main distinguishing characteristics are horizontal steam generators and loop seals in both hot and cold legs, which are lately a great safety concern worldwide. In 1987, the International Atomic Energy Agency (IAEA) organized and sponsored one of the tests performed on the Hungarian PMK-NVH test facility and called it IAEA-SPE-2. The test was chosen from a wider test matrix performed to investigate emergency core cooling system capability in VVER-440 plants for a small-break loss-of-coolant accident (SB LOCA). PMK-NVA is a one-loop, full-height, full-pressure model of the Hungarian Paks nuclear power plant, type VVER-440, Soviet production. The facility power level is 100%, according to the 1:2070 scaling factor.

  8. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  9. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  10. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

    2014-04-24

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  11. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

  12. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect (OSTI)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

    2014-05-15

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  13. Electronic and optical properties of TiCoSb under different pressures

    SciTech Connect (OSTI)

    Xu Bin; Zhang Jing; Liang Jianchu; Gao Guoying; Yi Lin

    2012-08-15

    The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

  14. in Proc. 12th Annual Conf. Innovative Applications of Artificial Intelligence (AAAI-13/IAAI-13), Bellevue, WA, 2013 Detecting the Moment of Snap in Real-World Football Videos

    E-Print Network [OSTI]

    ), Bellevue, WA, 2013 Detecting the Moment of Snap in Real-World Football Videos Behrooz Mahasseni and Sheng in American football videos, supporting over 13,000 high school and college teams. Its users often need to fast- forward the video to certain moments of snap when the corresponding plays of the football game

  15. 2/27/2014 Micro-windmills can recharge mobile phones -Macworld Australia -Macworld Australia http://www.macworld.com.au/news/micro-windmills-can-recharge-mobile-phones-117033/#.Uw--XvldWa8 1/4

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    2/27/2014 Micro-windmills can recharge mobile phones - Macworld Australia - Macworld Australia http://www.macworld.com.au/news/micro-windmills-can-recharge-mobile-phones-117033/#.Uw--XvldWa8 1/4 Search Subscription » Digital Subscription » Current Issue » Back Issues Micro-windmills can recharge mobile phones 19

  16. UW School of Oceanography Box 357940 206-543-5062 UW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206-543-0463

    E-Print Network [OSTI]

    Riser, Stephen C.

    /Position: Address: Period of Use: From To Office Phone Number: Email Address: Cell Phone Number: 2. IndividualUW School of Oceanography Box 357940 206-543-5062 UW EH&S Radiation Safety Section Box 354400 201-543-5062 UW EH&S Radiation Safety Section Box 354400 201 Hall Health Seattle WA 98195-4400 206

  17. Simulation of Crystallization in Ge[subscript 2]Sb[subscript 2]Te[subscript 2]: A Memory Effect in the Canonical Phase-Change Material

    E-Print Network [OSTI]

    Akola, J.

    Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied using four extensive (460 atoms, up to 4 ns) density functional/molecular dynamics simulations at 600 K. This phase change ...

  18. Electronic structure and thermoelectric performance of Zintl compound Sr{sub 3}GaSb{sub 3}: A first-principles study

    SciTech Connect (OSTI)

    Feng Shi, Qing; Li Yan, Yu; Xu Wang, Yuan, E-mail: wangyx@henu.edu.cn [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

    2014-01-06

    By using first-principles method and Boltzmann theory, we simulated the thermoelectric transport properties of p-type and n-type Sr{sub 3}GaSb{sub 3}. It is found that the thermoelectric figure-of merit (ZT) of n-type Sr{sub 3}GaSb{sub 3} is probably better than that of p-type, mainly due to its large band degeneracy. Moreover, a high ZT value of 1.74 at 850?K can be achieved for n-type Sr{sub 3}GaSb{sub 3} along the yy direction, corresponding to the carrier concentration 3.5?×?10{sup 20}?e cm{sup ?3}. We propose that the high ZT value of experimentally synthesized p-type Sr{sub 3}GaSb{sub 3} is originated from appearing of the larger number of band valley on the top of valence bands.

  19. Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L. (Palo Alto, CA)

    1981-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

  20. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  1. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L. (Palo Alto, CA)

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  2. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  3. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  4. Phase transitions in double perovskite Sr{sub 2}ScSbO{sub 6}: An Ab-initio study

    SciTech Connect (OSTI)

    Ray, Rajyavardhan; Kumar, Uday; Sinha, T. P.

    2014-04-24

    First Principles study of the electronic properties of recently synthesized double perovskite Sr{sub 2}ScSbO{sub 6} have been performed using density functional theory. With increasing temperature, the Sr compound undergoes three structural phase transitions at 400K, 550K and 650K approximately, leading to the following sequence of phases: P21/n ? I2/m ? I4/m ? Fm-3m. Starting from the monoclinic phase P21/n at room temperature, resulting from the Sc/Sb ordering, the electronic structure for the tetragonal I4/m at 613K and cubic Fm-3m for T?660K has been studied in terms of the density of states and band-structure. Presence of large band gap, both direct and indirect, has been reported and analyzed.

  5. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  6. Synthesis of nanocrystalline thin films of gold on the surface of GaSb by swift heavy ion

    SciTech Connect (OSTI)

    Jadhav, Vidya; Dubey, S. K.; Yadav, A. D.; Singh, A.

    2013-02-05

    Thin films of gold ({approx}100 nm thick) were deposited on p-type GaSb substrates. These samples were irradiated with 100 MeV Fe{sup 7+}ions for the fluence of 1 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions cm{sup -2}. After irradiation, samples were characterized using AFM, UV-VIS -NIR, X-Ray Diffraction techniques. AFM studies showed the presence of clusters on the surface of GaSb. R.M.S. roughness of the sample was found to increase w.r.t ion fluence. Absorption coefficient obtained from the Ultra violet - Visible NIR (UV-VIS -NIR) spectra of the samples irradiated with various fluences compared with non irradiated GaSb. The annealing experiment showed a significant improvement in the absorption coefficient after rapid thermal annealing at temperature of 400 Degree-Sign C. X-Ray Diffraction study reveals different orientations of Au film.

  7. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  8. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

    2014-06-21

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  9. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  10. Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

    SciTech Connect (OSTI)

    Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Das, T. D. [Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2014-07-21

    Room temperature implantation of 60?keV Ar{sup +}-ions in GaSb to the fluences of 7?×?10{sup 16} to 3?×?10{sup 18} ions cm{sup ?2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

  11. 60 keV Ar?-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect (OSTI)

    Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2014-10-14

    Room temperature irradiation of InSb(111) by 60 keV Ar?-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10ą? to 3×10ą? ions cm?˛. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In?O? and Sb?O? phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  12. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E [ORNL; Berlijn, Tom [ORNL; Hahn, Steven E [ORNL; May, Andrew F [ORNL; Williams, Travis J [ORNL; Poudel, Lekhanath N [ORNL; Calder, Stuart A [ORNL; Fishman, Randy Scott [ORNL; Stone, Matthew B [ORNL; Aczel, Adam A [ORNL; Cao, Huibo [ORNL; Lumsden, Mark D [ORNL; Christianson, Andrew D [ORNL

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  13. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  14. The young nuclear stellar disc in the SB0 galaxy NGC 1023

    E-Print Network [OSTI]

    Corsini, E M; Pastorello, N; Bontŕ, E Dalla; Pizzella, A; Portaluri, E

    2015-01-01

    Small kinematically-decoupled stellar discs with scalelengths of a few tens of parsec are known to reside in the centre of galaxies. Different mechanisms have been proposed to explain how they form, including gas dissipation and merging of globular clusters. Using archival Hubble Space Telescope imaging and ground-based integral-field spectroscopy, we investigated the structure and stellar populations of the nuclear stellar disc hosted in the interacting SB0 galaxy NGC 1023. The stars of the nuclear disc are remarkably younger and more metal rich with respect to the host bulge. These findings support a scenario in which the nuclear disc is the end result of star formation in metal enriched gas piled up in the galaxy centre. The gas can be of either internal or external origin, i.e. from either the main disc of NGC 1023 or the nearby satellite galaxy NGC 1023A. The dissipationless formation of the nuclear disc from already formed stars, through the migration and accretion of star clusters into the galactic cen...

  15. SLUDGE BATCH 5 ACCEPTANCE EVALUATION RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB5 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C; Ned Bibler, N; David Diprete, D

    2008-07-28

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Five (SB5) for processing in the Defense Waste Processing Facility (DWPF). Part of this SB5 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40 to complete the formation of SB5. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB4. The radionuclide concentrations were measured or estimated in the Tank 51 SB5 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry taken on March 21, 2008. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under direction of the Liquid Waste Organization it was then modified by five washes, six decants, an addition of Pu/Be from Canyon Tank 16.4, and an addition of NaNO2. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Ta Determining the radionuclide concentrations in this Tank 51 SB5 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2008-0010. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task 2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task 5) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB5 will be taken and transferred to SRNL for measurement of these radionuclides. Data presented in this report represents the measured or estimated radionuclide concentrations obtained from several standard and special analytical methods performed by Analytical Development (AD) personnel within SRNL. The method for I-129 measurement in sludge is described in detail. Most of these methods were performed on solutions resulting from the dissolutions of the slurry samples. Concentrations are given for twenty-nine radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 98% of the Tc-99 and 92% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

  16. SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C.; Bibler, N.; Diprete, D.

    2010-05-21

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB6 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. The sample is the same as that on which the chemical composition was reported. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 99% of the Tc-99 and at least 90% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

  17. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8?nm equivalent oxide thickness

    SciTech Connect (OSTI)

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8?nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  18. Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis.

    SciTech Connect (OSTI)

    Cionca, C.; Walko, D. A.; Yacoby, Y.; Dorin, C.; Millunchick, J. M.; Clarke, R.; X-Ray Science Division; Univ. of Michigan; Hebrew Univ.

    2007-01-01

    We have used Bragg rod x-ray diffraction combined with a direct method of phase retrieval to extract atomic resolution electron-density maps of a complementary series of heteroepitaxial III-V semiconductor samples. From the three-dimensional electron-density maps we derive the monolayer spacings, the chemical compositions, and the characteristics of the bonding for all atomic planes in the film and across the film-substrate interface. InAs films grown on GaSb(001) under two different As conditions (using dimer or tetramer forms) both showed conformal roughness and mixed GaAs/InSb interfacial bonding character. The As tetramer conditions favored InSb bonding at the interface while, in the case of the dimer, the percentages corresponding to GaAs and InSb bonding were equal within the experimental error. The GaSb film grown on InAs(001) displayed significant In and As interdiffusion and had a relatively large fraction of GaAs-like bonds at the interface.

  19. Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases

    SciTech Connect (OSTI)

    Arghavani Nia, Borhan; Sedighi, Matin; Shahrokhi, Masoud; Moradian, Rostam

    2013-11-15

    A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchange–correlation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: • Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. • It is found that the hexagonal phase is an indirect gap semiconductor. • Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. • By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

  20. medicine.usask.ca/family C O M M I T T E D P E O P L E A C R O S S S A S K AT C H E WA N

    E-Print Network [OSTI]

    Peak, Derek

    medicine.usask.ca/family C O M M I T T E D P E O P L E A C R O S S S A S K AT C H E WA N ­ Department of Academic Family Medicine Report for July 1, 2012 to June 30, 2013 learning all roads lead in Saskatchewan, we decided to focus this year on the Department of Academic Family Medicine's expansion

  1. Characterization of the environmental fate of Bacillus thuringiensis var. kaurstaki (Btk) after pest eradication efforts in Seattle, WA and Fairfax county, VA

    SciTech Connect (OSTI)

    Ticknor, Lawrence [Los Alamos National Laboratory; Van Cuyk, Sheila M [Los Alamos National Laboratory; Deshpande, Alina [Los Alamos National Laboratory; Omberg, Kristin M [Los Alamos National Laboratory

    2008-01-01

    Understanding the fate of biological agents in the environment will be critical to recovery and restoration efforts after a biological attack. Los Alamos National Laboratory (LANL) is conducting experiments in the Seattle, WA and Fairfax County, VA areas to study agent fate in urban environments. As part of their gypsy moth suppression efforts, Washington State and Fairfax County have sprayed Bacillus thuringiensis var. kurstaki (Btk), a common organic pesticide for decades. Many of the spray zones have been in or near urban areas. LANL has collected surface and bulk samples from historical Seattle spray zones to characterize how long Btk persists at detectable levels in the environment, and how long it remains viable in different environmental matrices. This work will attempt to address three questions. First, how long does the agent remain viable at detectable levels? Second, what is the approximate magnitude and duration of resuspension? And third, does the agent transport into buildings? Data designed to address the first question will be presented. Preliminary results indicate Btk remains viable in the environment for at least two years.

  2. Structural, electronic and optical properties of La{sub x}Sc{sub 1-x}Sb alloys

    SciTech Connect (OSTI)

    Ghezali, M.

    2015-03-30

    We present calculations of the structural, electronic and optic properties of LaxSc1-xSb ternary alloys for 0?x?1, by using the first principle full potential linear muffin-tin orbital (FPLMTO) method based on the local density approximation (LDA). the lattice constant, bulk modulus, electronic band structures, density of state and optical properties such as dielectric functions, refractive index and extinction coefficient are calculated and discussed for (x=0.25, 0.5 and 0.75). Our results agree well with the available data in the literature.

  3. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect (OSTI)

    Myers, Kenneth D.

    1999-11-08

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

  4. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect (OSTI)

    Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

    2013-09-30

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

  5. Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

    SciTech Connect (OSTI)

    Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.; Palmstrřm, Chris J.

    2014-01-13

    We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0?×?10{sup 17}?cm{sup ?3}, which is comparable to n-Si with similar carrier density. Below 100?K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.

  6. 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

    E-Print Network [OSTI]

    Yoon, Soon Fatt

    The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) ...

  7. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-14

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M?,? edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [?L = 2.8(1)?B/Pu] and spin moments [?S = –2.0(1)?B/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of Lz and Sz are in excellent agreement with the values thatmore »have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. We demonstrate that a split M? as well as a narrow M? XMCD signal may serve as a signature of 5f electron localization in actinide compounds.« less

  8. Direct spectroscopic evidence for completely filled Cu 3d shell in BaCu?As? and ? – BaCu?Sb?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, S. F.; Richard, P.; van Roekeghem, A.; Nie, S. M.; Miao, H.; Xu, N.; Qian, T.; Saparov, B.; Fang, Z.; Biermann, S.; et al

    2015-06-08

    We use angle-resolved photoemission spectroscopy to extract the band dispersion and the Fermi surface of BaCu?As? and ? - BaCu?Sb?. While the Cu 3d bands in both materials are located around 3.5 eV below the Fermi level, the low-energy photoemission intensity mainly comes from As 4p states, suggesting a completely filled Cu 3d shell. The splitting of the As 3d core levels and the lack of pronounced three-dimensionality in the measured band structure of BaCu?As? indicate a surface state likely induced by the cleavage of this material in the collapsed tetragonal phase, which is consistent with our observation of amore »Cu?ą oxidation state. However, the observation of Cu states at similar energy in ? - BaCu?Sb? without the pnictide-pnictide interlayer bonding characteristic of the collapsed tetragonal phase suggests that the short interlayer distance in BaCu?As? follows from the stability of the Cu?ą rather than the other way around. Our results confirm the prediction that BaCu?As? is an sp metal with weak electronic correlations.« less

  9. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-01

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M?,? edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [?L = 2.8(1)?B/Pu] and spin moments [?S = ?2.0(1)?B/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of ?Lz? and ?Sz? are in excellent agreement with the values that have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. Finally, we demonstrate that a split M? as well as a narrow M? XMCD signal may serve as a signature of 5f electron localization in actinide compounds.

  10. Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure H. Navarro-Contreras, F. de Anda-Salazar, and J. Olvera-Hernandez

    E-Print Network [OSTI]

    McCluskey, Matthew

    Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure H. Navarro, although it may be also an indication that the Se shallow donors change to deep donors associated pressures above a certain threshold value. The DX center is a deep-level defect found in many n

  11. Limitations on Subcontracting Service-Disabled Veteran-Owned SB Set-Aside UT-B Contracts Div Page 1 of 1

    E-Print Network [OSTI]

    Limitations on Subcontracting ­ Service-Disabled Veteran-Owned SB Set-Aside UT-B Contracts Div Mar LIMITATIONS ON SUBCONTRACTING ­ SERVICE-DISABLED VETERAN-OWNED SMALL BUSINESS SET-ASIDE OR SOLE SOURCE AWARD of other service-disabled veteran-owned small business concerns. (b) Supplies (other than procurement from

  12. A simple production-consumption system This note is for SB200, "A systems approach to biology". It provides more details of the analysis

    E-Print Network [OSTI]

    Gunawardena, Jeremy

    A simple production-consumption system This note is for SB200, "A systems approach to biology". It provides more details of the analysis of the production-consumption system that was done in the first to one of the TAs. I explained in class how the production-consumption system leads to the differential

  13. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge and computer memory, but the structure of the amorphous phases and the nature of the phase transition of types A Ge and Sb and B Te , an "ABAB square." The rapid amorphous-to-crystalline phase change

  14. Comparison of Pb, Zn, Cd, As, Cr, Mo and Sb Adsorption onto Natural Surface Coatings in a Stream Draining Natural As

    E-Print Network [OSTI]

    Comparison of Pb, Zn, Cd, As, Cr, Mo and Sb Adsorption onto Natural Surface Coatings in a Stream Science+Business Media New York 2014 Abstract Natural surface coatings (biofilms) were col- lected elements Á Distribution coefficient Á Biogenic Mn oxide Natural surface coatings are ubiquitous

  15. ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy Zheng Yang, Sheng Chu, Winnie V. Chen1

    E-Print Network [OSTI]

    Yang, Zheng

    ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy Zheng Yang, Sheng substrates using plasma-assisted molecular-beam epitaxy. Mesa geometry light emitting diodes (LEDs) were demonstrated in recent years, such as photodetectors,8,9) light-emitting diodes (LEDs),10­13) and random lasing

  16. Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass Guillaume Guery1,2

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass network, Université de Bordeaux I, Avenue du Dr Schweitzer, 33608 Pessac Cedex, France. Keywords: Chalcogenide glass; Raman spectroscopy; X-ray photoelectron spectroscopy; Glass properties Author whom correspondence should

  17. 504 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 Ultrathin-Body High-Mobility InAsSb-on-Insulator

    E-Print Network [OSTI]

    Javey, Ali

    504 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 Ultrathin-Body High-Mobility In- effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtainedAsSb-on-insulator FETs exhibit an effective mobility of 3400 cm2 /V · s for a body thickness of 7 nm, which rep- resents

  18. High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J; Snyder, G Jeffrey; Kauzlarich, Susan M

    2014-02-11

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  19. Observation and modeling of polycrystalline grain formation in Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Burr, Geoffrey W.; Tchoulfian, Pierre; Topuria, Teya; Nyffeler, Clemens; Virwani, Kumar; Padilla, Alvaro; Shelby, Robert M.; Eskandari, Mona; Jackson, Bryan; Lee, Bong-Sub

    2012-05-15

    The relationship between the polycrystalline nature of phase change materials (such as Ge{sub 2}Sb{sub 2}Te{sub 5}) and the intermediate resistance states of phase change memory (PCM) devices has not been widely studied. A full understanding of such states will require knowledge of how polycrystalline grains form, how they interact with each other at various temperatures, and how the differing electrical (and thermal) characteristics within the grains and at their boundaries combine through percolation to produce the externally observed electrical (and thermal) characteristics of a PCM device. We address the first of these tasks (and introduce a vehicle for the second) by studying the formation of fcc polycrystalline grains from the as-deposited amorphous state in undoped Ge{sub 2}Sb{sub 2}Te{sub 5}. We perform ex situ transmission electron microscopy membrane experiments and then match these observations against numerical simulation. Ramped-anneal experiments show that the temperature ramp-rate strongly influences the median grain size. By truncating such ramped-anneal experiments at various peak temperatures, we convincingly demonstrate that the temperature range over which these grains are established is quite narrow. Subsequent annealing at elevated temperature appears to change these established distributions of grain sizes only slightly. Our numerical simulator--which models nuclei formation through classical nucleation theory and then tracks the subsequent time- and temperature-dependent growth of these grains--can match these experimental observations of initial grain distributions and crystallization temperature both qualitatively and quantitatively. These simulations show that the particular narrow temperature range over which crystallization occurs shifts as a function of temperature ramp-rate, which allows us to quantify the lower portions of the time-temperature-transformation map for Ge{sub 2}Sb{sub 2}Te{sub 5}. Future experiments and extensions of the simulator to investigate temperature-dependent interactions between neighboring grains, and to study nucleation from within the melt-quenched amorphous state, are discussed.

  20. Trends in Electrical Transport of p-type Skutterudites RFe4Sb12 (R-Na,K,Ca,Sr,Ba,La,Ce,Pr,Yb) from First Principles Calculations and Boltzmann Transport Theory

    SciTech Connect (OSTI)

    Yang, Jiong [Chinese Academy of Sciences; Qiu, P [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS); Liu, R [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS); Xi, L [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS); Zheng, S [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS); Zhang, W [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS); Chen, Lidong [Chinese Academy of Sciences; Singh, David J [ORNL

    2011-01-01

    We report a consistent set of ab initio calculations of the electronic structures and electrical transport properties of p-type thermoelectric compounds RFe{sub 4}Sb{sub 12}, where R is a rattling filler selected from alkali metals (Na, K), alkaline earths (Ca, Sr, Ba), and rare earth metals (La, Ce, Pr, Yb). Different from the single Sb-dominated light band in the valence band edge of CoSb{sub 3}, the heavy bands from Fe d electronic states also fall in the energy range close to the valence band edges in the RFe{sub 4}Sb{sub 12}. These heavy bands dominate the band-edge density of states, pin the Fermi levels, and mostly determine the electrical transport properties of those p-type RFe{sub 4}Sb{sub 12}. The Seebeck coefficients can be roughly categorized into three groups based on the charge states of fillers, and the maxima are lower than those of n-type CoSb{sub 3} skutterudites. Effective carrier relaxation time in p-type RFe{sub 4}Sb{sub 12}, obtained from the combinations of calculations and experiments, is remarkably similar among different compounds with values around 7.5 x 10{sup -15} s and weak temperature dependence. The optimal doping levels of those RFe{sub 4}Sb{sub 12} are estimated to be around 0.6-0.8 holes per unit cell at 850 K, which is difficult to achieve in RFe{sub 4}Sb{sub 12} compounds. Prospects for further improving the performance of p-type skutterudites are also discussed.

  1. B O N N E V I L L E P O W E R A D M I N I S T R A T I O N WA - High School Counties

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L O O DBiomass andAtomsVehicles and Fuelsj B J withB O NVisualWA

  2. Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique

    SciTech Connect (OSTI)

    Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K. [Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka,Surathkal - 575025, Mangalore (India)

    2014-01-28

    Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

  3. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

    SciTech Connect (OSTI)

    SPAHN,OLGA B.; KLEM,JOHN F.

    2000-02-17

    The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

  4. Optical properties of AlAs{sub x}Sb{sub 1-x} alloys determined by in situ ellipsometry

    SciTech Connect (OSTI)

    Kim, J. Y.; Kim, T. J.; Kim, Y. D. [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Yoon, J. J.; Lee, E. H.; Bae, M. H.; Song, J. D.; Choi, W. J. [Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Liang, C.-T.; Chang, Y.-C. [Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China)

    2013-07-01

    We report pseudodielectric function data <{epsilon}> = <{epsilon}{sub 1}> + i<{epsilon}{sub 2}> from 0.74 to 6.48 eV of oxide-free AlAsSb alloys that are the closest representation to date of the intrinsic bulk dielectric response {epsilon} of the material. Measurements were performed on 1.3 {mu}m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Data were obtained with the films in situ to avoid oxidation artifacts. Critical-point structures were identified by band-structure calculations done with the linear augmented Slater-type orbital method. Crossings of transitions at the {Gamma}- and X-points and the {Gamma}- and L-points with composition were observed.

  5. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20?K to 300?K for Bi{sub 2}Te{sub 3} and from 10?K to 298?K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19?K to 298?K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup Ż}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M?=?Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  6. Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}

    SciTech Connect (OSTI)

    Kumar Gudelli, Vijay; Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Andhra Pradesh (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Andhra Pradesh (India); Svane, A.; Christensen, N. E. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

    2013-12-14

    Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23?eV is in agreement with the experimental value of 1.2?eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT?=?1.69 is obtained at 950?K for a hole concentration of 3.7·10{sup 19}?cm{sup ?3}, in agreement with a recent experimental finding of zT?=?1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

  7. Seattle, WA November 1974 q.'\\~ ........

    E-Print Network [OSTI]

    T RE IT 0 3 III #12;B T R T The problem of \\anitation In fi\\h-proce\\\\lng plant\\ I rccei\\ Ing In- rea

  8. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

    SciTech Connect (OSTI)

    Zhernokletov, Dmitry M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, Hong; Brennan, Barry; Kim, Jiyoung; Wallace, Robert M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge [College of Nanoscale Science and Engineering, University at Albany–SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany–SUNY, Albany, New York 12203 (United States)

    2013-11-15

    In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

  9. Explosive boiling of Ge{sub 35}Sb{sub 10}S{sub 55} glass induced by a CW laser

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2013-09-01

    Graphical abstract: - Highlights: • Interaction of the CW 785 nm laser with chalcogenide GeSbS glass. • First demonstration of the explosive boiling induced by CW laser in glass. • Different processes as photo-induced oxidation, expansion, and viscosity-flow observed. • Applied diagnostics SEM, DHM, AFM, force spectroscopy, and micro-Raman spectroscopy. • Damage threshold determined at 1.2 × 10{sup 24}s{sup ?1} cm{sup ?3} of absorbed photons. - Abstract: The response of bulk Ge{sub 35}Sb{sub 10}S{sub 55} glass to illumination by a continuous wave (CW) laser, sub-band-gap photons, was studied specifically with an atomic force microscopy including a force spectroscopy, with a digital holographic microscopy and with a scanning electron microscopy. Depending on the number of photons absorbed, photo-expansion, photo-oxidation and explosive boiling were observed.

  10. Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle

    SciTech Connect (OSTI)

    Martin-Palma, R. J.; Ryan, Joseph V.; Pantano, C. G.

    2007-04-23

    GeSbSe chalcogenide thin films were deposited using glancing angle deposition onto transparent glass substrates for the determination of the spectral behavior of the optical constants (index of refraction n and extinction coefficient k) in the visible and near infrared ranges (400-2500 nm) as a function of the deposition angle. Computational simulations based on the matrix method were employed to determine the values of the optical constants of the different films from the experimental reflectance and transmittance spectra. A significant dependence of the overall optical behavior on the deposition angle is found. Furthermore, the band gap of the GeSbSe thin films was calculated. The accurate determination of the optical constants of films grown at glancing angle will enable the development of sculptured thin film fiber-optic chemical sensors and biosensors.

  11. Record figure of merit values of highly stoichiometric Sb2Te3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; Mudring, Anja; Stötzel, Julia; Maculewicz, Franziska; Schierning, Gabi

    2015-08-06

    We report on the synthesis of Sb2Te3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

  12. SLUDGE BATCH 7 (SB7) WASHING DEMONSTRATION TO DETERMINE SULFATE/OXALATE REMOVAL EFFICIENCY AND SETTLING BEHAVIOR

    SciTech Connect (OSTI)

    Reboul, S.; Click, D.; Lambert, D.

    2010-12-10

    To support Sludge Batch 7 (SB7) washing, a demonstration of the proposed Tank Farm washing operation was performed utilizing a real-waste test slurry generated from Tank 4, 7, and 12 samples. The purpose of the demonstration was twofold: (1) to determine the settling time requirements and washing strategy needed to bring the SB7 slurry to the desired endpoint; and (2) to determine the impact of washing on the chemical and physical characteristics of the sludge, particularly those of sulfur content, oxalate content, and rheology. Seven wash cycles were conducted over a four month period to reduce the supernatant sodium concentration to approximately one molar. The long washing duration was due to the slow settling of the sludge and the limited compaction. Approximately 90% of the sulfur was removed through washing, and the vast majority of the sulfur was determined to be soluble from the start. In contrast, only about half of the oxalate was removed through washing, as most of the oxalate was initially insoluble and did not partition to the liquid phase until the latter washes. The final sulfur concentration was 0.45 wt% of the total solids, and the final oxalate concentration was 9,900 mg/kg slurry. More oxalate could have been removed through additional washing, although the washing would have reduced the supernatant sodium concentration.The yield stress of the final washed sludge (35 Pa) was an order of magnitude higher than that of the unwashed sludge ({approx}4 Pa) and was deemed potentially problematic. The high yield stress was related to the significant increase in insoluble solids that occurred ({approx}8 wt% to {approx}18 wt%) as soluble solids and water were removed from the slurry. Reduction of the insoluble solids concentration to {approx}14 wt% was needed to reduce the yield stress to an acceptable level. However, depending on the manner that the insoluble solids adjustment was performed, the final sodium concentration and extent of oxalate removal would be prone to change. As such, the strategy for completing the final wash cycle is integral to maintaining the proper balance of chemical and physical requirements.

  13. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    SciTech Connect (OSTI)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III; Siegal, Michael P.; Yelton, William Graham

    2006-11-01

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  14. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect (OSTI)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ?5 × 10{sup ?8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup ?3}, resistivity of 66.733–12.758 ? cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup ?1} s{sup ?1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  15. Crystal structure of Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La, Pr and Nd): A new ordered rhombohedral pyrochlore

    SciTech Connect (OSTI)

    Fu, W.T., E-mail: w.fu@chem.leidenuniv.nl; IJdo, D.J.W.

    2014-05-01

    Manganese rare earth antimonates with the formula Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La–Yb and Y) have been prepared and their structures were determined by the Rietveld method using X-ray diffraction data. The compounds with Ln=La, Pr and Nd crystallize in a rhombohedral supercell of the cubic fluorite with the space group R3{sup Ż}m and with the lattice parameters a{sub h}??2a{sub c} and c{sub h}?2?3a{sub c}, where a{sub c} denotes the lattice constant of the cubic fluorite. The structure is pyrochlore-like but differs from the common cubic pyrochlore A{sub 2}B{sub 2}O{sub 7} in that it consists of fully ordered Mn:Ln in the A sites and Mn:Sb in the B sites with the ratio 1:3. The most interesting feature of Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} is that the divalent Mn ions have different coordination numbers with oxygen and the Mn(II)O{sub 6} (octahedron) and Mn(II)O{sub 8} (hexagonal bipyramid) alternate along the parent cubic fluorite axes. For medium sized lanthanides, i.e. from Ln=Sm, the rhombohedral phase coexists with the cubic phase and Mn{sub 2}Y{sub 3}Sb{sub 3}O{sub 14} is cubic a pyrochlore. - Graphical abstract: Crystal structure of rhombohedral pyrochlore Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La, Pr, and Nd) showing the staking of Ln{sub 3}Mn and MnSb{sub 3} layers (a). (b) and (c) show the connections between Mn1O{sub 6} and LnO{sub 8} and between Mn2O{sub 8} and SbO{sub 6} polyhedra, respectively. - Highlights: • Pyrochlores of the formula Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} (Ln=La–Yb and Y) were synthesized for the first time. • Mn{sub 2}Ln{sub 3}Sb{sub 3}O{sub 14} with Ln=La, Pr, Nd are rhombohedral consisting of fully 1:3 ordering of metal ions. • With medium-sized Ln, rhombohedral phase co-exists with cubic phase. • Two divalent Mn ions have coordination numbers of 6 and 8, respectively.

  16. Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

    SciTech Connect (OSTI)

    Ryczko, K.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

    2013-12-14

    Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10??m. Eight-band k·p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSb and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.

  17. Namibia-UNEP Green Economy Advisory Services | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation,MeregNIFESpinning Mills Ltd NSML Jump

  18. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect (OSTI)

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  19. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    SciTech Connect (OSTI)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  20. Direct imaging of crystal structure and defects in metastable Ge{sub 2}Sb{sub 2}Te{sub 5} by quantitative aberration-corrected scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Ross, Ulrich; Lotnyk, Andriy Thelander, Erik; Rauschenbach, Bernd

    2014-03-24

    Knowledge about the atomic structure and vacancy distribution in phase change materials is of foremost importance in order to understand the underlying mechanism of fast reversible phase transformation. In this Letter, by combining state-of-the-art aberration-corrected scanning transmission electron microscopy with image simulations, we are able to map the local atomic structure and composition of a textured metastable Ge{sub 2}Sb{sub 2}Te{sub 5} thin film deposited by pulsed laser deposition with excellent spatial resolution. The atomic-resolution scanning transmission electron microscopy investigations display the heterogeneous defect structure of the Ge{sub 2}Sb{sub 2}Te{sub 5} phase. The obtained results are discussed. Highly oriented Ge{sub 2}Sb{sub 2}Te{sub 5} thin films appear to be a promising approach for further atomic-resolution investigations of the phase change behavior of this material class.

  1. Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}

    SciTech Connect (OSTI)

    Guo Yun Zhang Miao; Shen Liang; Jin Yingying; Jin Zhimin

    2010-12-15

    The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

  2. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Law, Jeremy J. M.; Rodwell, Mark J. W.; Lu, Hong; Gossard, Arthur C.; Jena, Debdeep

    2014-03-28

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

  3. Hard x-ray photoelectron spectroscopy study of Ge{sub 2}Sb{sub 2}Te{sub 5}; as-deposited amorphous, crystalline, and laser-reamorphized

    SciTech Connect (OSTI)

    Richter, Jan H. Tominaga, Junji; Fons, Paul; Kolobov, Alex V.; Ueda, Shigenori; Yoshikawa, Hideki; Yamashita, Yoshiyuki; Ishimaru, Satoshi; Kobayashi, Keisuke

    2014-02-10

    We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge{sub 2}Sb{sub 2}Te{sub 5} using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

  4. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)

    SciTech Connect (OSTI)

    Astakhova, A. P.; Golovin, A. S.; Il'inskaya, N. D.; Kalinina, K. V.; Kizhayev, S. S., E-mail: serguie@mail.ru; Serebrennikova, O. Yu.; Stoyanov, N. D. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Horvath, Zs. J. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science (Hungary); Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2010-02-15

    Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength {lambda} = 3.3-3.4 {mu}m is as high as 22.3%. The optical emission power of the LEDs is 140 {mu}W at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.

  5. Structural, spectroscopic and dielectric investigations on Ba{sub 8}Zn(Nb{sub 6-x}Sb{sub x})O{sub 24} microwave ceramics

    SciTech Connect (OSTI)

    Suresh, M.K.; John, Annamma; Thomas, J.K.; Wariar, P.R.S. [Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015, Kerala (India)] [Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015, Kerala (India); Solomon, Sam, E-mail: samdmrl@yahoo.com [Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015, Kerala (India)] [Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015, Kerala (India)

    2010-10-15

    Ba{sub 8}Zn(Nb{sub 6-x}Sb{sub x})O{sub 24} (x = 0, 0.3, 0.6, 0.9, 1.2, 1.5, 1.8 and 2.4) ceramics were prepared through the conventional solid-state route. The materials were calcined at 1250 {sup o}C and sintered in the range 1400-1425 {sup o}C. The structure of the system was analyzed by X-ray diffraction, Fourier transform infrared and Raman spectroscopic methods. The theoretical and experimental densities were calculated. The microstructure of the sintered pellets was analyzed using scanning electron microscopy. The low frequency dielectric properties were studied in the frequency range 50 Hz-2 MHz. The dielectric constant ({epsilon}{sub r}), temperature coefficient of resonant frequency ({tau}{sub f}) and the unloaded quality factor (Q{sub u}) are measured in the microwave frequency region using cavity resonator method. The {tau}{sub f} values of the samples reduced considerably with the increase in Sb concentration. The materials have intense emission lines in the visible region. The compositions have good microwave dielectric properties and photoluminescence and hence are suitable for dielectric resonator and ceramic laser applications.

  6. Masses of the components of SB2 binaries observed with Gaia. II. Masses derived from PIONIER interferometric observations for Gaia validation

    E-Print Network [OSTI]

    Halbwachs, J -L; Bouquin, J -B Le; Kiefer, F; Famaey, B; Salomon, J -B; Arenou, F; Pourbaix, D; Anthonioz, F; Grellmann, R; Guieu, S; Sana, H; Guillout, P; Jorissen, A; Lebreton, Y; Mazeh, T; Tal-Or, L; Gomez-Moran, A Nebot

    2015-01-01

    In anticipation of the Gaia astrometric mission, a sample of spectroscopic binaries is being observed since 2010 with the Sophie spectrograph at the Haute--Provence Observatory. Our aim is to derive the orbital elements of double-lined spectroscopic binaries (SB2s) with an accuracy sufficient to finally obtain the masses of the components with relative errors as small as 1 % when combined with Gaia astrometric measurements. In order to validate the masses derived from Gaia, interferometric observations are obtained for three SB2s in our sample with F-K components: HIP 14157, HIP 20601 and HIP 117186. The masses of the six stellar components are derived. Due to its edge-on orientation, HIP 14157 is probably an eclipsing binary. We note that almost all the derived masses are a few percent larger than the expectations from the standard spectral-type-mass calibration and mass-luminosity relation. Our calculation also leads to accurate parallaxes for the three binaries, and the Hipparcos parallaxes are confirmed.

  7. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O?: Honeycomb-ordered cathodes for Na-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na?/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O? can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both “disordered” and “ordered” forms, depending onmore »the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O? is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3?m, #166, a = b = 3.06253(3) Ĺ and c = 16.05192(7) Ĺ) and ordered variants (C2/m, #12, a = 5.30458(1) Ĺ, b = 9.18432(1) Ĺ, c = 5.62742(1) Ĺ and ? = 108.2797(2)°) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O? is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through ˛łNa solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence of conventional stacking faults. The lack of long range coherence is instead attributed to disorder among the three possible choices for distributing Ni and Sb cations into a honeycomb lattice in each transition metal layer. It is observed that the full theoretical discharge capacity expected for a Nił?/˛? redox couple (133 mAh/g) can be achieved for the ordered variant but not for the disordered variant (~110 mAh/g). The first 3.27 V plateau during charging is found to be associated with a two-phase O3 ? P3 structural transition, with the P3 stacking sequence persisting throughout all further stages of desodiation.« less

  8. Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

    SciTech Connect (OSTI)

    Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

    2014-01-01

    The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

  9. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  10. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Zhao, Xin-Hao [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  11. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  12. Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

    SciTech Connect (OSTI)

    Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-04-01

    An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

  13. A high-pressure route to thermoelectrics with low thermal conductivity: The solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1–0.6)

    SciTech Connect (OSTI)

    Schröder, Thorsten; Rosenthal, Tobias; Souchay, Daniel; Petermayer, Christian; Grott, Sebastian; Scheidt, Ernst-Wilhelm; Gold, Christian; Scherer, Wolfgang; Oeckler, Oliver

    2013-10-15

    Metastable rocksalt-type phases of the solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1, 0.2, 0.4, 0.5 and 0.6) were prepared by high-pressure synthesis at 2.5 GPa and 400 °C. In these structures, the coordination number of In{sup 3+} is six, in contrast to chalcopyrite ambient-pressure AgInTe{sub 2} with fourfold In{sup 3+} coordination. Transmission electron microscopy shows that real-structure phenomena and a certain degree of short-range order are present, yet not very pronounced. All three cations are statistically disordered. The high degree of disorder is probably the reason why AgIn{sub x}Sb{sub 1?x}Te{sub 2} samples with 0.4SbTe{sub 2} (? ?0.6 W/K m). The highest ZT value (0.15 at 300 K) is observed for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, mainly due to its high Seebeck coefficient of 160 µV/K. Temperature-dependent X-ray powder patterns indicate that the solid solutions are metastable at ambient pressure. At 150 °C, the quaternary compounds decompose into chalcopyrite-type AgInTe{sub 2} and rocksalt-type AgSbTe{sub 2}. - Graphical abstract: Reaction scheme, temperature characteristics of the ZT value and a selected-area electron diffraction pattern (background) of AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, which crystallizes in a rocksalt-type structure with statistical cation disorder. Display Omitted - Highlights: • High-pressure synthesis yields the novel solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2}. • In contrast to AgInTe{sub 2}, the compounds are inert at ambient pressure. • HRTEM shows no pronounced short-range order in the disordered NaCl-type structure. • The metastable phases exhibit very low total thermal conductivities <0.5 W/K m. • ZT values of 0.15 at room temperature were measured for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}.

  14. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1?x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect (OSTI)

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1?x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  15. On photo-expansion and microlens formation in (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} chalcogenide glass

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? Photo-expansion induced by sub-band-gap photons in GeSbS glass. ? One-step microlens formation. ? The topography of the microlenses detected by AFM and DHM. ? The good mechanical characteristics of the microlenses were obtained. ? Local light-induced overheating of the glass. -- Abstract: Photo-expansion of the bulk of (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} glass induced by sub-gap photons is studied employing specifically atomic force microscopy (AFM) namely an atomic force acoustic microscopy (AFAM) and a force spectroscopy and digital holographic microscopy. The results are discussed with respect to the possible role of light induced overheating in the process of photo-expansion.

  16. Type B epitaxy of Ge on CaF2(111) surface T.-L. Chan , C. Gaire, T.-M. Lu, G.-C. Wang, S.B. Zhang

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Type B epitaxy of Ge on CaF2(111) surface T.-L. Chan , C. Gaire, T.-M. Lu, G.-C. Wang, S.B. Zhang is rotated 180° about the [111] axis, dominated the heteroepitaxial growth of Ge(111) on a CaF2 theory to determine the energetics of the Ge(111)/CaF2(111) interface and found that the type B

  17. Synthesis, characterization and physical properties of the skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Vaqueiro, Paz; Knight, Kevin S.; Powell, Anthony V.

    2012-09-15

    The skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im3{sup Macron} (a Almost-Equal-To 9.1 A) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe{sub 2}Ni{sub 2}Sb{sub 12} confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2{<=}T/K{<=}300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis. - Graphical abstract: The filled skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The thermoelectric performance depends strongly on the Yb content. The physical properties and thermal stability of the compounds are further discussed in comparison with the current state-of-the art thermoelectric skutterudites. Highlights: Black-Right-Pointing-Pointer A new series of skutterudites has been prepared and characterised. Black-Right-Pointing-Pointer Physical properties are affected by the degree of Yb filling. Black-Right-Pointing-Pointer The highest thermoelectric performance is found for Yb{sub 0.15}Fe{sub 2}Ni{sub 2}Sb{sub 12}. Black-Right-Pointing-Pointer The skutterudites decompose in air above 550 K.

  18. Substitution effect on magnetic and electrical properties of half-Heusler alloy Ni{sub 1?x}Co{sub x}Mn{sub 1?y}Fe{sub y}Sb

    SciTech Connect (OSTI)

    Kushwaha, Varun Sharma, Himanshu Dixit, Dinesh Tomy, C. V.; Tulapurkar, Ashwin

    2014-04-24

    We have studied the effects of Co and Fe doping on the magnetic and electrical properties of half-Heusler compound NiMnSb. The alloys were prepared by arc-melting method in the presence of Argon gas. The powder X-ray diffraction of the each alloy was performed in air at room temperature. The magnetic and electrical properties were performed in the temperature range 2–400 K and in magnetic field up to 1 T.

  19. Record figure of merit values of highly stoichiometric Sb2Te3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

    SciTech Connect (OSTI)

    Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; Mudring, Anja; Stötzel, Julia; Maculewicz, Franziska; Schierning, Gabi

    2015-08-06

    We report on the synthesis of Sb2Te3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

  20. Construction integrity assessment report (ETN-98-0005) S-Farm overground transfer (OGT) system valve pit 241-S-B to valve pit 241-S-D

    SciTech Connect (OSTI)

    HICKS, D.F.

    1999-08-12

    The S-Farm overground transfer (OGT) line will bypass the existing line(s), between valve pits 241-S-B and 241-S-D that no longer meet system requirements. The new OGT line will provide a waste transfer pipeline between these valve pits in support of saltwell pumping activities. The length of the OGT line is approximately 180 ft from pit to pit. The primary pipe is nominal 1-in. diameter stainless steel (SST) braided Ethylene-propylene Diene Monomer (EPDM) hose. The encasement pipe is a nominal 3-in., flanged, SST pipe made up of several different length pipe spool pieces (drawing H-2-829564, sh. 1 and sh. 2). The OGT line slopes from valve pit 241-S-B toward valve pit 241-S-D. At each end, the primary and encasement pipe connect to a pit entry spool piece. The pit entry spool pieces are constructed of prefabricated SST materials. These spool pieces allow for the separation of the primary and encasement pipelines after the pipes have entered the valve pits (drawing H-2-818280, sh. 2). The pit entry spool pieces also allow for leak detection of the encasement pipe at each end (drawing H-2-829564, sh. 2). The OGT encasement pipeline is supported above ground by adjustable height unistrut brackets and precast concrete bases (drawing H-2-829654, sh. 1). The pipeline is heat-traced and insulated. The heat tracing and insulation supply and retain latent heat that prevents waste solidification during transfers and provides freeze protection. The total length of the pipeline is above ground, thereby negating the need for cathodic corrosion protection. This Construction Integrity Assessment Report (CIAR) is prepared by Fluor Daniel Northwest for Numatec Hanford Corporation/Lockheed Martin Hanford Corporation, the operations contractor, and the U. S. Department of Energy, the system owner. The CIAR is intended to verify that construction was performed in accordance with the provisions of Washington Administrative Code, WAC-173-303-640 (3) (c), (e), (f) and (h).

  1. Imaging dirac-mass disorder from magnetic dopant-atoms in the ferromagnetic topological insulator Crx(Bi?.?Sb?.?)??xTe?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J. L.; Zhong, Ruidan D.; Schneeloch, John A.; Liu, Tiansheng S.; Valla, Tonica; Tranquada, John M.; Gu, Genda; et al

    2015-01-20

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in themore »ferromagnetic TI Cr?.??(Bi?.?Sb?.?)?.??Te?. Simultaneous visualization of the Dirac-mass gap ?(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of ?(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship ?(r)?n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm˛. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.« less

  2. Relativistic Jahn-Teller effects in the photoelectron spectra of tetrahedral P{sub 4}, As{sub 4}, Sb{sub 4}, and Bi{sub 4}

    SciTech Connect (OSTI)

    Opalka, Daniel; Domcke, Wolfgang [Department of Chemistry, Technische Universitaet Muenchen, D-85747 Garching (Germany); Poluyanov, Leonid V. [Institute of Chemical Physics, Academy of Sciences, Chernogolovka, Moscow 142432 (Russian Federation)

    2011-09-14

    The group-V tetrahedral cluster cations P{sub 4}{sup +}, As{sub 4}{sup +}, Sb{sub 4}{sup +}, and Bi{sub 4}{sup +} are known to exhibit exceptionally strong Jahn-Teller (JT) effects of electrostatic origin in their {sup 2}E ground states and {sup 2}T{sub 2} excited states. It has been predicted that there exist, in addition, JT couplings of relativistic origin (arising from the spin-orbit (SO) operator) in {sup 2}E and {sup 2}T{sub 2} states of tetrahedral systems, which should become relevant for the heavier elements. In the present work, the JT and SO couplings in the group-V tetramer cations have been analyzed with ab initio relativistic electronic structure calculations. The vibronic line spectra and the band shapes of the photoelectron spectra were simulated with time-dependent quantum wave-packet methods. The results provide insight into the interplay of electrostatic and relativistic JT couplings and SO splittings in the complex photoelectron spectra of these systems.

  3. Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films

    SciTech Connect (OSTI)

    Secor, Jeff; Zhao, Lukas; Krusin-Elbaum, Lia; Harris, Matt A.; Deng, Haiming; Raoux, Simone

    2014-06-02

    A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q?=?0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.

  4. Assessment of RELAP5/MOD3.1 with the LSTF SB-SG-06 experiment simulating a steam generator tube rupture transient

    SciTech Connect (OSTI)

    Seul, K.W.; Bang, Y.S.; Lee, S.; Kim, H.J.

    1996-09-01

    The objective of the present work is to identify the predictability of RELAP5/MOD3.1 regarding thermal-hydraulic behavior during a steam generator tube rupture (SGTR). To evaluate the computed results, LSTF SB-SG-06 test data simulating the SGTR that occurred at the Mihama Unit 2 in 1991 are used. Also, some sensitivity studies of the code change in RELAP5, the break simulation model, and the break valve discharge coefficient are performed. The calculation results indicate that the RELAP5/MOD3.1 code predicted well the sequence of events and the major phenomena during the transient, such as the asymmetric loop behavior, reactor coolant system (RCS) cooldown and heat transfer by natural circulation, the primary and secondary system depressurization by the pressurizer auxiliary spray and the steam dump using the intact loop steam generator (SG) relief valve, and so on. However, there are some differences from the experimental data in the number of the relief valve cycling in the affected SG, and the flow regime of the hot leg with the pressurizer, and the break flow rates. Finally, the calculation also indicates that the coolant in the core could remain in a subcooled state as a result of the heat transfer caused by the natural circulation flow even if the reactor coolant pumps (RCPs) turned off and that the affected SG could be properly isolated to minimize the radiological release after the SGTR.

  5. Imaging dirac-mass disorder from magnetic dopant-atoms in the ferromagnetic topological insulator Crx(Bi?.?Sb?.?)??xTe?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Inhee [Brookhaven National Lab. (BNL), Upton, NY (United States); Kim, Chung Koo [Brookhaven National Lab. (BNL), Upton, NY (United States); Lee, Jinho [Brookhaven National Lab. (BNL), Upton, NY (United States); Seoul National Univ., Seoul (Korea); Billinge, Simon J. L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States); Zhong, Ruidan D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States); Schneeloch, John A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States); Liu, Tiansheng S. [Brookhaven National Lab. (BNL), Upton, NY (United States); North Univ. of China, Shanxi (China); Valla, Tonica [Brookhaven National Lab. (BNL), Upton, NY (United States); Tranquada, John M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gu, Genda [Brookhaven National Lab. (BNL), Upton, NY (United States); Davis, J. C. Seamus [Brookhaven National Lab. (BNL), Upton, NY (United States); Cornell Univ., Ithaca, NY (United States); Univ. of St. Andrews, Fife (Scotland)

    2015-02-03

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr?.??(Bi?.?Sb?.?)?.??Te?. Simultaneous visualization of the Dirac-mass gap ?(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of ?(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship ?(r)?n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm˛. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  6. Sumas, WA Natural Gas Exports to Canada

    Gasoline and Diesel Fuel Update (EIA)

    12,530 7,769 9,768 6,016 10,409 3,547 1996-2014 Pipeline Prices 5.55 4.81 4.47 3.87 4.02 5.05 1996...

  7. art Phones ha versity of Wa

    E-Print Network [OSTI]

    nformation st ly to the partic ormation, con ontact. For ins he smart phon y Risk Ad tion Settin a well should pe or erase its row (for exam e. This can be ge, or through a good idea to phone has "se e

  8. EIS-0346: Salmon Creek Project, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's proposal to fund activities that would restore sufficient water flows to Salmon Creek and rehabilitate its streambed as necessary to provide adequate passage for summer steelhead (Oncorhynchus mykiss) and possibly spring chinook (O. tshawytscha).

  9. 212 Union Ave, SE Olympia, WA 98501

    E-Print Network [OSTI]

    flexibility over the same time period and a nuclear power plant was retired. Under the Council's Fifth Power, the nation, and nations around the world begin to document and seek to reduce the amount of greenhouse gas

  10. Sumas, WA LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan3 November 2013Additions (Million CubicYear Jan31 South8

  11. Sumas, WA LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan3 November 2013Additions (Million CubicYear Jan31 South812,530

  12. Category:Seattle, WA | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia:GeothermalNEPAReference MaterialsRochester, NYUT

  13. Synthesis and structural and magnetic characterization of the frustrated magnetic system La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6}

    SciTech Connect (OSTI)

    Franco, D.G.; Carbonio, R.E.; Nieva, G.

    2013-11-15

    We report the synthesis of double perovskites La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6} with x=0, 1/3, 2/3 and 1 by a solid state method. Rietveld refinements of X-ray and neutron powder diffraction data show that all samples crystallize in space group P2{sub 1}/n, with almost perfect occupation of the 2d octahedral site with the transition metals, while all Sb{sup 5+} are randomly distributed in a 2c octahedral site. The saturation magnetization in hysteresis loops indicates that the samples are ferrimagnetic throughout all the series. Virgin magnetization curves lie outside hysteresis loops at low temperatures and thermal evolution of H{sub m} – defined as the inflection point of these curves – follows the de Almeida–Thouless dependence for x?0. This spin glass like behavior below 30 K is also supported by thermal evolution of the coercivity, which follows an exponential law typical of magnetic clusters, not found in the pure Ni{sup 2+} perovskite, x=0 extreme. - Graphical abstract: Display Omitted - Author-Highlights: • We synthesized new double perovskites: La{sub 2}Ni{sub 4/3?x}Co{sub x}SbO{sub 6} (x=1/3, 2/3, 1). • The cations occupying octahedral sites are highly ordered in all samples. • Magnetic transition occurs as a consequence of superexchange paths. • Frustration is found and attributed to competition between different interactions.

  14. Crystal structure of fluorite-related Ln{sub 3}SbO{sub 7} (Ln=La–Dy) ceramics studied by synchrotron X-ray diffraction and Raman scattering

    SciTech Connect (OSTI)

    Siqueira, K.P.F.; Borges, R.M.; Granado, E.; Malard, L.M.; Paula, A.M. de; Moreira, R.L.; Bittar, E.M.; Dias, A.

    2013-07-15

    Ln{sub 3}SbO{sub 7} (Ln=La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) ceramics were synthesized by solid-state reaction in optimized conditions of temperature and time to yield single-phase ceramics. The crystal structures of the obtained ceramics were investigated by synchrotron X-ray diffraction, second harmonic generation (SHG) and Raman scattering. All samples exhibited fluorite-type orthorhombic structures with different oxygen arrangements as a function of the ionic radius of the lanthanide metal. For ceramics with the largest ionic radii (La–Nd), the ceramics crystallized into the Cmcm space group, while the ceramics with intermediate and smallest ionic radii (Sm–Dy) exhibited a different crystal structure belonging to the same space group, described under the Ccmm setting. The results from SHG and Raman scattering confirmed these settings and ruled out any possibility for the non-centrosymmetric C222{sub 1} space group describing the structure of the small ionic radii ceramics, solving a recent controversy in the literature. Besides, the Raman modes for all samples are reported for the first time, showing characteristic features for each group of samples. - Graphical abstract: Raman spectrum for La{sub 3}SbO{sub 7} ceramics showing their 22 phonon modes adjusted through Lorentzian lines. According to synchrotron X-ray diffraction and Raman scattering, this material belongs to the space group Cmcm. - Highlights: • Ln{sub 3}SbO{sub 7} ceramics belonging to the space groups Cmcm and Ccmm are synthesized. • SXRD, SHG and Raman scattering confirmed the orthorhombic structures. • Ccmm instead of C222{sub 1} is the correct one based on SHG and Raman data.

  15. A realistic technique for selection of angular momenta from hot nuclei: A case study with 4He + 115In \\to 119Sb at E_Lab = 35 MeV

    E-Print Network [OSTI]

    Deepak Pandit; S. Mukhopadhyay; Srijit Bhattacharya; Surajit Pal; A. De; S. R. Banerjee

    2010-09-17

    A rather new approach employing Monte Carlo GEANT simulation for converting the experimentally measured fold distribution to angular momentum distribution has been described. The technique has been successfully utilized to measure the angular momentum of the compound nucleus formed in the reaction 4He + 115In --> 119Sb at E_Lab = 35 MeV. A 50 element gamma multiplicity filter, fabricated in-house, was used to measure experimentally the required fold distribution. The present method has been compared with the other ones exiting in the literature and relative merits have been discussed.

  16. The opportunity offered by the ESSnuSB project to exploit the larger leptonic CP violation signal at the second oscillation maximum and the requirements of this project on the ESS accelerator complex

    E-Print Network [OSTI]

    Elena Wildner; Michel Martini; Horst Schonauer; Alexander Burgman; Joakim Cederkall; Peter Christiansen; Tord Ekelof; Maja Olvegard

    2015-10-02

    Very intense neutrino beams and large neutrino detectors will be needed to enable the discovery of CP violation in the leptonic sector. The European Spallation Source (ESS), currently under construction in Lund, Sweden, is a research center that will provide, by 2023, the world's most powerful neutron source. The average power will be 5 MW. Pulsing this linac at higher frequency, at the same instantaneous power, will make it possible to raise the average beam power to 10 MW to produce, in parallel with the spallation neutron production, a high performance neutrino Super Beam of about 0.4 GeV mean neutrino energy. The ESS neutrino Super Beam, ESSnuSB, operated with a 2.0 GeV linac proton beam, together with a large underground Water Cherenkov detector located at 540 km from Lund, close to the second oscillation maximum, will make it possible to discover leptonic CP violation at 5 sigma significance level in 56 percent (65 percent for an upgrade to 2.5 GeV beam energy) of the leptonic Dirac CP-violating phase range after 10 years of data taking. The paper gives an overview of the proposed facility and presents the outstanding physics reach possible for CP violation with ESSnuSB.

  17. Ge L{sub 3}-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Mitrofanov, K. V. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Kolobov, A. V., E-mail: a.kolobov@aist.go.jp; Fons, P. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan and Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Wang, X.; Tominaga, J. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Tamenori, Y.; Uruga, T. [Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Ciocchini, N.; Ielmini, D. [DEIB - Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

    2014-05-07

    A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change alloys, such as Ge{sub 2}Sb{sub 2}Te{sub 5}, known as drift, is a serious technological issue for application of phase-change memory. While it has been proposed that drift is related to structural relaxation, no direct structural results have been reported so far. Here, we report the results of Ge L{sub 3}-edge x-ray absorption measurements that suggest that the drift in electrical conductivity is associated with the gradual conversion of tetrahedrally coordinated Ge sites into pyramidal sites, while the system still remains in the amorphous phase. Based on electronic configuration arguments, we propose that during this process, which is governed by the existence of lone-pair electrons, the concentration of free carriers in the system decreases resulting in an increase in resistance despite the structural relaxation towards the crystalline phase.

  18. Ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using single-shot imaging spectroscopy

    SciTech Connect (OSTI)

    Takeda, Jun, E-mail: jun@ynu.ac.jp; Oba, Wataru; Minami, Yasuo; Katayama, Ikufumi [Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501 (Japan); Saiki, Toshiharu [Graduate School of Science and Technology, Keio University, Yokohama 223-8522 (Japan)

    2014-06-30

    We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using broadband single-shot imaging spectroscopy. The absorbance change that accompanied the ultrafast amorphization was measured via single-shot detection even for laser fluences above the critical value, where a permanent amorphized mark was formed. The observed rise time to reach the amorphization was found to be ?130–200 fs, which was in good agreement with the half period of the A{sub 1} phonon frequency in the octahedral GeTe{sub 6} structure. This result strongly suggests that the ultrafast amorphization can be attributed to the rearrangement of Ge atoms from an octahedral structure to a tetrahedral structure. Finally, based on the dependence of the absorbance change on the laser fluence, the stability of the photoinduced amorphous phase is discussed.

  19. Constraining diamond metasomatic growth using C-and N-stable isotopes: examples from Namibia

    E-Print Network [OSTI]

    Cartigny, Pierre

    Abstract The present paper provides C- and N-stable isotope characteristics, N-contents and N-aggregation; Metasomatism 1. Introduction Increasing evidence suggests that some eclogite nodules are recycled oceanic crust

  20. INNOVATIONS IN BOUNDARY MAPPING: NAMIBIA, CUSTOMARY LANDS AND MUKENDWA MUMBONE, ROHAN BENNET, MARKUS GERKE, WALTER

    E-Print Network [OSTI]

    appears on all such copies. #12;2 Abstract Unmanned Aerial Vehicle technology (UAVs) provides: Boundary Mapping, Customary Land, Photogrammetry, Unmanned Aerial Vehicles (UAVs) #12;3 1. INTRODUCTION This study investigates the potential of using Unmanned Aerial Vehicles (UAV) in surveying and mapping

  1. Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Lee, Sanghoon; Cohen-Elias, Doron; Law, Jeremy J. M.; Carter, Andrew D.; Rodwell, Mark J. W.; Chobpattana, Varistha; Stemmer, Susanne; Gossard, Arthur C.; Materials Department, University of California, Santa Barbara, California 93106

    2013-11-11

    We compare the DC characteristics of planar In{sub 0.53}Ga{sub 0.47}As channel MOSFETs using AlAs{sub 0.56}Sb{sub 0.44} barriers to similar MOSFETs using In{sub 0.52}Al{sub 0.48}As barriers. AlAs{sub 0.56}Sb{sub 0.44}, with ?1.0?eV conduction-band offset to In{sub 0.53}Ga{sub 0.47}As, improves electron confinement within the channel. At gate lengths below 100?nm and V{sub DS}?=?0.5?V, the MOSFETs with AlAs{sub 0.56}Sb{sub 0.44} barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the In{sub 0.52}Al{sub 0.48}As barrier to thermionic emission from the N?+?In{sub 0.53}Ga{sub 0.47}As source over the In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterointerface. A 56?nm gate length device with the AlAs{sub 0.56}Sb{sub 0.44} barrier exhibits 1.96 mS/?m peak transconductance and SS?=?134?mV/dec at V{sub DS}?=?0.5?V.

  2. Dielectric and piezoelectric properties of Bi{sub 2}O{sub 3} added (Pb,Ca,Sr)(Ti,Mn,Sb)O{sub 3} ceramics sintered at low temperature

    SciTech Connect (OSTI)

    Kim, Dohyung; Yoo, Juhyun [Department of Electrical Engineering, Semyung University, Jechon, Chungbuk 390-711 (Korea, Republic of); Kim, Insung; Song, Jaesung [Piezoelectric Devices Research Group, KERI, Changwon 641-12 (Korea, Republic of)

    2009-03-15

    In this study, in order to develop low temperature sintering ceramics for a thickness mode multilayer piezoelectric transformer, (Pb,Ca,Sr)(Ti,Mn,Sb)O{sub 3} ceramics were fabricated using Na{sub 2}CO{sub 3}, Li{sub 2}CO{sub 3}, MnO{sub 2}, and Bi{sub 2}O{sub 3} as sintering aids at 870, 900, and 930 deg. C. Their respective dielectric and piezoelectric properties were investigated according to the amount of Bi{sub 2}O{sub 3} addition. At the sintering temperature of 900 deg. C, the optimum value was shown for the density of 6.94 g/cm{sup 3}, thickness vibration mode electromechanical coupling factor (henceforth, k{sub t}) of 0.497, thickness vibration mode mechanical quality factor (henceforth, Q{sub mt}) of 3162, and dielectric constant (henceforth, {epsilon}{sub r}) of 209 for thickness mode multilayer piezoelectric transformer application.

  3. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect (OSTI)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  4. The opportunity offered by the ESSnuSB project to exploit the larger leptonic CP violation signal at the second oscillation maximum and the requirements of this project on the ESS accelerator complex

    E-Print Network [OSTI]

    Wildner, Elena; Schonauer, Horst; Burgman, Alexander; Cederkall, Joachim; Christiansen, Peter; Ekelof, Tord; Olvegard, Maja

    2015-01-01

    Very intense neutrino beams and large neutrino detectors will be needed to enable the discovery of CP violation in the leptonic sector. The European Spallation Source (ESS), currently under construction in Lund, Sweden, is a research center that will provide, by 2023, the world's most powerful neutron source. The average power will be 5 MW. Pulsing this linac at higher frequency, at the same instantaneous power, will make it possible to raise the average beam power to 10 MW to produce, in parallel with the spallation neutron production, a high performance neutrino Super Beam of about 0.4 GeV mean neutrino energy. The ESS neutrino Super Beam, ESSnuSB, operated with a 2.0 GeV linac proton beam, together with a large underground Water Cherenkov detector located at 540 km from Lund, close to the second oscillation maximum, will make it possible to discover leptonic CP violation at 5 sigma significance level in 56 percent (65 percent for an upgrade to 2.5 GeV beam energy) of the leptonic Dirac CP-violating phase r...

  5. DOE ZERH Case Study: Dwell Development, Reclaimed Modern, Seattle, WA

    SciTech Connect (OSTI)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the cold climate that got a HERS 30 without PV, with 2x8 24” on center walls with blown fiberglass and 4” polysio rigid foam; basement with 2” XPS interior, 4” under slab, 4” exterior of foundation wall; vented attic with R-100 blown cellulose; wo air-to-air heat pumps SEER 14.1; HSPF 9.6; heat pump water heater.

  6. Advance Patent Waiver W(A)2007-020

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42950

  7. SEATTLE, WA NOAA Technical Report NMFS SSRF667

    E-Print Network [OSTI]

    ;y of thE fre sp- water S~n'1lp, 1!1ac?,ob 'a " ll11l, iJ thp Lowpr St. P~ul RIver, LIberIa, 1952 5. By (reorg

  8. Advance Patent Waiver W(A)2005-054

    Broader source: Energy.gov [DOE]

    This is a request by SIEMEN for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42444.

  9. Advance Patent Waiver W(A)2008-007

    Broader source: Energy.gov [DOE]

    This is a request by SCHOTT NORTH AMERICA, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17001

  10. Advance Patent Waiver W(A)2012-033

    Broader source: Energy.gov [DOE]

    This is a request by GE-GLOBAL RESEARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-OE000593.

  11. Advance Patent Waiver W(A)2013-003

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006108.

  12. Advance Patent Waiver W(A)2013-015

    Broader source: Energy.gov [DOE]

    This is a request by Caterpillar Inc for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005980.

  13. Advance Patent Waiver W(A)2012-034

    Broader source: Energy.gov [DOE]

    This is a request by CORNING INCORPORATED for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005757.

  14. Advance Patent Waiver W(A)2012-020

    Broader source: Energy.gov [DOE]

    This is a request by CLIPPER WINDPOWER LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005141.

  15. Advance Patent Waiver W(A)2012-027

    Broader source: Energy.gov [DOE]

    This is a request by DAIMIER TRUCKS NORTH AMERICA for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0003348.

  16. Advance Patent Waiver W(A)2013-016

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL MOTORS LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005753.

  17. Advance Patent Waiver W(A)2013-019

    Broader source: Energy.gov [DOE]

    This is a request by CREE, INC. for a DOE waiver of domestic and foreign patent rights under agreement NGB-3-23028-01.

  18. Advance Patent Waiver W(A)2012-029

    Broader source: Energy.gov [DOE]

    This is a request by ALCOA COMMERICAL WINDOWS, LLC for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0004012.

  19. Advance Patent Waiver W(A)2013-007

    Broader source: Energy.gov [DOE]

    This is a request by CA TCHLIGHT ENERGY, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005974.

  20. Advance Patent Waiver W(A)2012-031

    Broader source: Energy.gov [DOE]

    This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-NT0005578.

  1. Advance Patent Waiver W(A)2013-013

    Broader source: Energy.gov [DOE]

    This is a request by BABCOCK & WILCOX mPOWER for a DOE waiver of domestic and foreign patent rights under agreement DE-NE0000583.

  2. Advance Patent Waiver W(A)2012-024

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005493.

  3. Advance Patent Waiver W(A)2013-008

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL MOTORS LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005969.

  4. Advance Patent Waiver W(A)2008-022

    Broader source: Energy.gov [DOE]

    This is a request by ABENGOA BIOENERGY BIOMASS OF KANSAS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC3607017028

  5. Advance Patent Waiver W(A)2011-039

    Broader source: Energy.gov [DOE]

    This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18134.

  6. Advance Patent Waiver W(A)2010-042

    Broader source: Energy.gov [DOE]

    This is a request by UNIVERSITY OF NORTH DAKOTA for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT43291

  7. EIS-0330: Wallula Power Project, Walla Walla County, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes DOE's proposal to construct, operate, maintain, and decontaminate and decommission two depleted uranium hexafluoride (DUF 6) conversion facilities, at Portsmouth, Ohio, and Paducah, Kentucky.

  8. Advance Patent Waiver W(A)2005-016

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by BAKER HUGHES INTERNATIONAL for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT15488.

  9. Advance Patent Waiver W(A)2011-027

    Broader source: Energy.gov [DOE]

    This is a request by VARIAN ASSOCIATES, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004737.

  10. Advance Patent Waiver W(A)2012-030

    Broader source: Energy.gov [DOE]

    This is a request by SRI INTERNATIONAL for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0000896.

  11. Advance Patent Waiver W(A)2010-024

    Broader source: Energy.gov [DOE]

    This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42469

  12. Advance Patent Waiver W(A)2010-054

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIE for a DOE waiver of domestic and foreign patent rights under agreement DE-NT003894

  13. INSTABILITY C S Bretherton, University of Washington, Seattle, WA,

    E-Print Network [OSTI]

    Bretherton, Chris

    on small- amplitude (linear) two-dimensional inviscid hydro- static motions of a nonrotating atmosphere are neglected. Classically, a linear stability analysis of a small-amplitude wave is used to assess

  14. Advance Patent Waiver W(A)2011-033

    Broader source: Energy.gov [DOE]

    This is a request by ABB INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000547.

  15. Advance Patent Waiver W(A)2011-046

    Broader source: Energy.gov [DOE]

    This is a request by ALSTOM GRID INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000551.

  16. Advance Patent Waiver W(A)2011-007

    Broader source: Energy.gov [DOE]

    This is a request by BAYER MATERIALSCIENCE LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0004571.

  17. Advance Patent Waiver W(A)2012-028

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS ENERGY, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0005666.

  18. EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA

    Broader source: Energy.gov [DOE]

    This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snohomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. The DOE NEPA process for this project has been canceled.

  19. Advance Patent Waiver W(A)2005-049

    Broader source: Energy.gov [DOE]

    This is a request by AMERICAN AIR LIQUIDE for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41586.

  20. EIS-0189: Tank Waste Remediation System (TWRS), Richland, WA (Programmatic)

    Broader source: Energy.gov [DOE]

    This environmental impact statement evaluates the Department of Energy (DOE)'s, in cooperation with the Washington State Department of Ecology (Ecology), decisions on how to properly manage and dispose of Hanford Site tank waste and encapsulated cesium and strontium to reduce existing and potential future risk to the public, Site workers, and the environment. The waste includes radioactive, hazardous, and mixed waste currently stored in 177 underground storage tanks, approximately 60 other smaller active and inactive miscellaneous underground storage tanks (MUSTs), and additional Site waste likely to be added to the tank waste, which is part of the tank farm system. In addition, DOE proposes to manage and dispose of approximately 1,930 cesium and strontium capsules that are by-products of tank waste. The tank waste and capsules are located in the 200 Areas of the Hanford Site near Richland, Washington.

  1. 18130 Midvale Ave. N., Suite C Shoreline, WA 98133

    E-Print Network [OSTI]

    principles established for this proceeding: 1. The proposal preserves and enhances the value of the FCRPS a region with good utility planning, excellent electric service, and low rates. With proper long seven generations years. As has been reported to the Northwest Power Planning Council and to Bonneville

  2. Advance Patent Waiver W(A)2012-013

    Broader source: Energy.gov [DOE]

    This is a request by BAKER HUGHES OILFIELD OPERATIONS, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-EE0005505.

  3. Advance Patent Waiver W(A)2010-033

    Broader source: Energy.gov [DOE]

    This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT01911

  4. Advance Patent Waiver W(A)2007-021

    Broader source: Energy.gov [DOE]

    This is a request by SUN POWER CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-PS36-06GO96034

  5. Advance Patent Waiver W(A)2012-016

    Broader source: Energy.gov [DOE]

    This is a request by LINDE, INC. for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FE0007453.

  6. Advance Patent Waiver W(A)2013-031

    Broader source: Energy.gov [DOE]

    This is a request by WESTINGHOUSE ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-NE0000566.

  7. Advance Patent Waiver W(A)2013-027

    Broader source: Energy.gov [DOE]

    This is a request by ELECTRICORE INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005968

  8. Advance Patent Waiver W(A)2013-018

    Broader source: Energy.gov [DOE]

    This is a request by General Motors, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0006082.

  9. Advance Patent Waiver W(A)2013-014

    Broader source: Energy.gov [DOE]

    This is a request by W.R GRACE AND CO for a DOE waiver of domestic and foreign patent rights under agreement DE- EE0005991.

  10. Advance Patent Waiver W(A)2013-022

    Broader source: Energy.gov [DOE]

    This is a request by 3M COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005795.

  11. Advance Patent Waiver W(A)2009-001

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by GE GLOBAL RESEARCHH CENTER for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-GO18085

  12. Advance Patent Waiver W(A)2011-001

    Broader source: Energy.gov [DOE]

    This is a request by PRAXAIR, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004908.

  13. Advance Patent Waiver W(A)2006-021

    Broader source: Energy.gov [DOE]

    This is a request by UTC FUEL CELLS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-06GO86042

  14. Advance Patent Waiver W(A)2011-036

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL LABORATORIES for a DOE waiver of domestic and foreign patent rights under agreement DE-OE0000544.

  15. Advance Patent Waiver W(A)2004-084

    Broader source: Energy.gov [DOE]

    This is a request by MILLENNIUM INORGANIC CHEMICAL for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-04GO14153.

  16. Advance Patent Waiver W(A)2011-050

    Broader source: Energy.gov [DOE]

    This is a request by EMERSON ELECTRIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004000.

  17. Advance Patent Waiver W(A)2013-005

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by STATOIL WIND US LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005988.

  18. Advance Patent Waiver W(A)2011-002

    Broader source: Energy.gov [DOE]

    This is a request by APPLIED MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003838.

  19. Advance Patent Waiver W(A)2010-047

    Broader source: Energy.gov [DOE]

    This is a request by APPLIED MATERIALS, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003331

  20. Advance Patent Waiver W(A)2011-058

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC CO. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005143.

  1. Advance Patent Waiver W(A)2008-013

    Broader source: Energy.gov [DOE]

    This is a request by SANYO ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17050

  2. Advance Patent Waiver W(A)2007-005

    Broader source: Energy.gov [DOE]

    This is a request by EATON CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-06GO16054

  3. Advance Patent Waiver W(A)2006-019

    Broader source: Energy.gov [DOE]

    This is a request by NALCO CHEMICAL CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06FT42721

  4. EIS-0244: Plutonium Finishing Plant Stabilization, Hanford Site, Richland, WA

    Broader source: Energy.gov [DOE]

    This EIS evaluates the impacts on the human environment of: Stabilization of residual, plutonium-bearing materials at the PFP Facility to a form suitable for interim storage at the PFP Facility. Immobilization of residual plutonium-bearing materials at the PFP Facility. Removal of readily retrievable, plutonium-bearing materials left behind in process equipment, process areas, and air and liquid waste management systems as a result of historic uses.

  5. Advance Patent Waiver W(A)2012-003

    Broader source: Energy.gov [DOE]

    This is a request by CREE for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FOA-0000439.

  6. Advance Patent Waiver W(A)2005-053

    Broader source: Energy.gov [DOE]

    This is a request by ALLEGHENY TECHNLOGIES WAH CHANG DIVISION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42513.

  7. Advance Patent Waiver W(A)2011-061

    Broader source: Energy.gov [DOE]

    This is a request by ABENGOA SOLAR INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO18037.

  8. Advance Patent Waiver W(A)2012-004

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRIC GLOBAL REARCH for a DOE Advance patent waiver of domestic and foreign patent rights under agreement DE-FO0007514.

  9. Advance Patent Waiver W(A)2005-021

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO15151.

  10. Advance Patent Waiver W(A)2006-034

    Broader source: Energy.gov [DOE]

    This is a request by ENERGY CONVERSION DEVICES, INC. for a DOE waiver of domestic and foreign patent rights under agreement UNKNOWN

  11. Advance Patent Waiver W(A)2009-002

    Broader source: Energy.gov [DOE]

    This is a request by JOHNSON MATTNEY FUEL CELLS INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17019

  12. Advance Patent Waiver W(A)2010-045

    Broader source: Energy.gov [DOE]

    This is a request by LUMMUS COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003457

  13. Issaquah Highlands Zero Energy Affordable Housing (WA) - YWCA

    SciTech Connect (OSTI)

    Tom, Vincent; DeRobbio, Wendy; Hall, Linda

    2012-04-30

    The YWCA Family Village at Issaquah, Net Zero Energy Approach Project provides a compelling model for how the nation can seriously respond to the critical need for affordable housing while advancing environmental standards and reducing economic inequities. Affordable housing developments for vulnerable members of the community and in today's workforce cannot overlook issues, such as climate impact, energy security and water conservation. This project's advanced building design was based on the goal of creating a 100 year building that could achieve net zero energy usage if funding had been available to support the final pieces of energy generation. The team worked closely with community stakeholders to ensure the baseline components of high quality and efficient building envelopes along with efficient systems were in place to set the stage for future incorporation of energy generating systems such as solar panels. As built, these 146 homes, large child care center and community services areas are proving the value of investing upfront for the benefit of future generations by reducing ongoing utility and maintenance costs with an eye toward environmental stewardship and community/resident education. The DOE award helped fund two critical energy conservation features for the YWCA Family Village at Issaquah campus: 1) super-insulated roof assembly with a continuous air barrier and 2) domestic hot water preheat system. The roof system at the YWCA Family Village at Issaquah project was built to include 6" of Polyiso rigid insulation (R-38) on top of the roof sheathing to provide a super-insulated roof in line with the other green features of the project. Placing the rigid insulation on top of the roof sheathing allows the building to have a continuous layer of insulation and provides a continuous air barrier. The domestic hot water preheat system includes flat panel arrays on roofs of the buildings that heat the water using solar power, which reduces the amount of heating needed from the gas-fired boilers. The flat-plate panels on the roof of the building heats the water using solar power. A heat exchanger transfers heat from water warmed by the panels to potable water for the units. The warmed potable water mixes with the tap water supply to create hot water for the buildings. This boost of water warmed by the solar panels reduces the heating costs for eh project by reducing the need to heat the water via gas-fired boilers. Both of these energy upgrades were chosen because they significantly improve the energy efficiency for the life of the building and are reducing monthly utility costs for both the residents and the owners. Since the owner is a not-for-profit dedicated to long-term ownership and serving households with very-low and low-incomes, the costs savings will ultimately benefit current and future residents as the dollars saved will either be realized directly by the resident or be invested in the project. Technically, the design of these systems is easily understood and the principles could be applied to other projects. The incremental costs depend largely on the existing market rate of the components-none of which are considered "cutting edge" so a market does currently exist.

  14. Advance Patent Waiver W(A)2013-006

    Broader source: Energy.gov [DOE]

    This is a request by PRINCIPLE POWER, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005987.

  15. Advance Patent Waiver W(A)2005-033

    Broader source: Energy.gov [DOE]

    This is a request by EASTMAN CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-AC26-99NT40675.

  16. Advance Patent Waiver W(A)2008-025

    Broader source: Energy.gov [DOE]

    This is a request by Grace Davison Company for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-05GO085006

  17. Advance Patent Waiver W(A)2010-046

    Broader source: Energy.gov [DOE]

    This is a request by NUVERA FUEL CELLS, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-07GO17014

  18. Advance Patent Waiver W(A)2008-044

    Broader source: Energy.gov [DOE]

    This is a request by ALSTOM POWER, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43095

  19. Advance Patent Waiver W(A)2010-018

    Broader source: Energy.gov [DOE]

    This is a request by BOEING COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18055

  20. Advance Patent Waiver W(A)2010-017

    Broader source: Energy.gov [DOE]

    This is a request by FORD MOTOR COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18128

  1. Advance Patent Waiver W(A)2008-030

    Broader source: Energy.gov [DOE]

    This is a request by DOW CORNING CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-OBG01B02B

  2. Advance Patent Waiver W(A)2007-014

    Broader source: Energy.gov [DOE]

    This is a request by DONALDSON COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-06NT42861

  3. Advance Patent Waiver W(A)2011-008

    Broader source: Energy.gov [DOE]

    This is a request by CERAMATEC, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000395.

  4. Advance Patent Waiver W(A)2009-005

    Broader source: Energy.gov [DOE]

    This is a request by CONOCO PHILIPS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT0006553

  5. Advance Patent Waiver W(A)2010-003

    Broader source: Energy.gov [DOE]

    This is a request by GENERAL ELECTRICC GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000784

  6. Advance Patent Waiver W(A)2005-023

    Broader source: Energy.gov [DOE]

    This is a request by HEADWATER for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-04NT42448.

  7. Advance Patent Waiver W(A)2011-048

    Broader source: Energy.gov [DOE]

    This is a request by ADA-ES for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0004343.

  8. Advance Patent Waiver W(A)2009-045

    Broader source: Energy.gov [DOE]

    This is a request by BABCOCK & WILCO for a DOE waiver of domestic and foreign patent rights under agreement DE-AC52-09NA29596

  9. Advance Patent Waiver W(A)2011-049

    Broader source: Energy.gov [DOE]

    This is a request by DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003916.

  10. Advance Patent Waiver W(A)2010-030

    Broader source: Energy.gov [DOE]

    This is a request by RED ACQUISITION, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003364

  11. Advance Patent Waiver W(A)2009-030

    Broader source: Energy.gov [DOE]

    This is a request by BALDOR ELECTRIC COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-08GO18132

  12. EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA

    Broader source: Energy.gov [DOE]

    DOE has postponed preparation of this EIS to better align the completion of the EIS with planned future operations of facilities on Hanford’s Central Plateau (such as Hanford’s Waste Treatment and Immobilization Plant).

  13. Advance Patent Waiver W(A)2011-018

    Broader source: Energy.gov [DOE]

    This is a request by ESOLAR for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003595.

  14. South Street 90 South Street, Murdoch, WA 6150

    E-Print Network [OSTI]

    30 27 29 10 7 6 5 9 16 26 15 14 13 12 11 17 18 25 24 23 31 32 21 20 28 2 34 5 6 7 8 9 10 ANIMAL HOUSE BIOLOGICAL SCIENCES ANIMAL ISOLATION UNIT GLASS HOUSES ELS COMPOUND CAMPUS DRIVE CAMPUSDRIVE ANIMAL HOUSE Hospital Barry Marshall Drive Murd Pol Stat CENTRE FOR ORGANIC WASTE MANAGEMENT ANIMAL HOUSE 2

  15. Advance Patent Waiver W(A)2005-005

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-00OR22809.

  16. Advance Patent Waiver W(A)2006-032

    Broader source: Energy.gov [DOE]

    This is a request by HONEYWELL INTERNATIONAL, INC. for a DOE waiver of domestic and foreign patent rights under agreement UNKNOWN

  17. Advance Patent Waiver W(A)2011-065

    Broader source: Energy.gov [DOE]

    This is a request by OWENS CORNING for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005338.

  18. Advance Patent Waiver W(A)2011-071

    Broader source: Energy.gov [DOE]

    This is a request by THE DOW CHEMICAL COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0005434.

  19. Advance Patent Waiver W(A)2009-068

    Broader source: Energy.gov [DOE]

    This is a request by United Solar Systems Corp. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-07GO17053

  20. Advance Patent Waiver W(A)2009-021

    Broader source: Energy.gov [DOE]

    This is a request by PHILIPS LUMILEDS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-08NT01583

  1. Advance Patent Waiver W(A)2005-038

    Broader source: Energy.gov [DOE]

    This is a request by PHILLIPS ELECTRONIC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42342.

  2. Advance Patent Waiver W(A)2010-056

    Broader source: Energy.gov [DOE]

    This is a request by PHILIPS RESEARCH LABORATORY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003978

  3. Advance Patent Waiver W(A)2010-022

    Broader source: Energy.gov [DOE]

    This is a request by PHILIPS LUMILEDS for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003210

  4. Advance Patent Waiver W(A)2010-021

    Broader source: Energy.gov [DOE]

    This is a request by PHILIPS LUMILEDS for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003249

  5. Advance Patent Waiver W(A)2005-031

    Broader source: Energy.gov [DOE]

    This is a request by OSRAM SYLVANIA PRODUCTS, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO85042.

  6. C:\\Temp_jhd\\spacers\\spacers_wa_2014.prn

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at time of production. It does not represent any legal information or boundaries. BPA GIS Database, 2013. 0 10 20 30 40 Miles N January 27, 2014 bud.bpa.govwggisgisdata2...

  7. Advance Patent Waiver W(A)2008-035

    Broader source: Energy.gov [DOE]

    This is a request by POET RESEARCH, INC. for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-08GO88033

  8. Best Practices Case Study: Quadrant Homes - Kentlake Highlands, Kent, WA

    SciTech Connect (OSTI)

    none,

    2010-09-01

    Case study of Quadrant Homes, a Seattle area builder who, despite the recession, sold three homes a day in the first half of 2009, by letting buyers choose from 300 floor plans and 10,000 options, including an energy efficiency package designed with help from DOE’s Building America that cut energy use by 50% over a code-built home.

  9. Advance Patent Waiver W(A)2007-022

    Broader source: Energy.gov [DOE]

    This is a request by SIEMENS for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-02NT41247

  10. Advance Patent Waiver W(A)2005-062

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by UNITED TECHNOLOGIES CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-05NT42626.

  11. Advance Patent Waiver W(A)2011-037

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by DELPHI AUTOMOTIVE SYSTEMS, LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000478.

  12. Advance Patent Waiver W(A)2009-064

    Office of Energy Efficiency and Renewable Energy (EERE)

    This is a request by ROLLS ROYCE FUEL SYSTEMS for a DOE waiver of domestic and foreign patent rights under agreement DE-FE0000303

  13. Advance Patent Waiver W(A)2005-058

    Broader source: Energy.gov [DOE]

    This is a request by ASTRONAUTICS CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-03NT1948.

  14. PAH bioconcentration in Mytilus sp from Sinclair Inlet, WA

    SciTech Connect (OSTI)

    Frazier, J.; Young, D.; Ozretich, R.; Echols, S.

    1995-12-31

    Approximately 20 polynuclear aromatic hydrocarbons (PAH) were measured by GC/MS in seawater and whole soft tissues of the intertidal mussel Mytilus sp. collected in July 1991 within and around Puget Sound`s Sinclair Inlet. Low variability was observed in the water concentrations collected over three days at control sites, yielding reliable values for the exposure levels experienced by this bioindicator mollusk. Mean water concentrations of acenaphthene, phenanthrene, and fluoranthene in the control region were 2.7 {+-} 0.8, 2.8 {+-} 0.8, and 3.1 {+-} 0.7 ng/liter, respectively. Levels measured near sites of vessel activity were higher but much more variable; this reduced the reliability of the tissue/water bioconcentration factors (BCF) obtained from these samples. An empirical model relating values of Log BCF and Log Kow for the control zone samples supports the utility of this estuarine bioindicator for monitoring general levels of PAH in nearshore surface waters.

  15. Advance Patent Waiver W(A)2007-015

    Broader source: Energy.gov [DOE]

    This is a request by UNITED TECHNOLOGIES CORP for a DOE waiver of domestic and foreign patent rights under agreement DE-FC26-07NT43055

  16. Isotopic Studies of Contaminant Transport at the Hanford Site, WA

    E-Print Network [OSTI]

    Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

    2008-01-01

    1977. Subcommission on geochronology: Convention on the useby W. Sharp, Berkeley Geochronology Center). Isotopic

  17. Advance Patent Waiver W(A)2010-062

    Broader source: Energy.gov [DOE]

    This is a request by PARKER HANNIFIN CORPORATION for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0000296

  18. Advance Patent Waiver W(A)2010-036

    Broader source: Energy.gov [DOE]

    This is a request by GE GLOBAL RESEARCH for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003251

  19. Advance Patent Waiver W(A)2009-055

    Broader source: Energy.gov [DOE]

    This is a request by DUPONT COMPANY for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0002593

  20. Advance Patent Waiver W(A)2011-012

    Broader source: Energy.gov [DOE]

    This is a request by CAMBRIOS TECHNOLOGIES CORP. for a DOE waiver of domestic and foreign patent rights under agreement DE-EE0003254.

  1. Advance Patent Waiver W(A)2008-028

    Broader source: Energy.gov [DOE]

    This is a request by INEOS USA LLC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-04GO14315

  2. DOE - Office of Legacy Management -- Hanford Engineer Works - WA 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont, SouthLaboratoryDiv

  3. File:INL-geothermal-wa.pdf | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New Pages Recent Changes AllApschem.pdfgasp 03.pdf JumpGerak.pdf Jump5.pdf Jump to:ut.pdf

  4. RAPID/Roadmap/12-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ | Roadmap Jump to:

  5. RAPID/Roadmap/12-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ | Roadmap Jump to:b <

  6. RAPID/Roadmap/14-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ | RoadmapCO-ce <cde

  7. RAPID/Roadmap/14-WA-d | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ | RoadmapCO-ce

  8. RAPID/Roadmap/15-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ |a < RAPID‎ | Roadmap

  9. RAPID/Roadmap/18-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎ |a <-AK-bNV-a

  10. RAPID/Roadmap/3-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎f <CA-aab <

  11. RAPID/Roadmap/3-WA-c | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎f <CA-aab <c <

  12. RAPID/Roadmap/3-WA-d | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎f <CA-aab <c <d <

  13. RAPID/Roadmap/3-WA-e | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎f <CA-aab <c <d <e

  14. RAPID/Roadmap/4-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa < RAPID‎f <CA-aabTX-a <

  15. RAPID/Roadmap/6-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b < RAPID‎ |a < RAPID‎ |

  16. RAPID/Roadmap/6-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b < RAPID‎ |a < RAPID‎ |b

  17. RAPID/Roadmap/6-WA-d | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b < RAPID‎ |a < RAPID‎

  18. RAPID/Roadmap/9-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b <Roadmap/9-CA-bl

  19. RAPID/Roadmap/9-WA-c | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/Nevadaa <NV-b <Roadmap/9-CA-blc < RAPID‎

  20. Microsoft Word - WA Parish_MAP_Final.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates7In389:UFCAugust 4,For4ViAW.A.

  1. Petra Nova - W.A. Parish Project | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy AEnergyPresidential PermitDAYS - WE NEED ADr. Peter B. Lyons - AssistantPeterThe

  2. ERSUG Meeting: January 12 - 13, 1995 (Richland, WA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HAB PacketDieselAbsorptionPowering6106 TotalMinutes ERSUG Meeting July

  3. RAPID/Roadmap/15-WA-b | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-b < RAPID‎ | Roadmap JumpNV-ad <c <UT-fUT-ab

  4. RAPID/Roadmap/3-WA-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-b < RAPID‎ | RoadmapAK-a <CA-ae < RAPID‎

  5. Microsoft Word - WA Parish_MAP_Final.docx

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested Parties - WAPAEnergy May2.docTechnicalBARACK07ABB and Energy UtilitiesW.A.

  6. Hanford, WA Selected as Plutonium Production Facility | National Nuclear

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journalvivo Low-Dose Lowď‚—34OctoberK West60 Revision 12.iB -Department

  7. Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearbyWithdrawalsHome Page Welcome to(EIA)

  8. Climate Action Champions: Seattle, WA | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-in electric vehicle (PEV) chargingWASHINGTON, DCThe City

  9. The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail. (Conference)FeedbackProperties ofThe Maximum Value Method.SciTechOrigin of|

  10. SB EE Calculator | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Calculator Energy Efficiency Decision Support Calculator Argonne's Energy Efficiency Decision Support Calculator is a simple tool that small business owners can use to quickly...

  11. Implementation of SB 1368 Emission Performance

    E-Print Network [OSTI]

    ........................................................................... 8 Chapter 4: Emissions Performance Standard .....................13 Coal................................................................................................................. 14 Petroleum Coke

  12. Methylocystis strain SB2 materials and methods

    DOE Patents [OSTI]

    Semrau, Jeremy D; Gallagher, Warren; Yoon, Sukhwan; Im, Jeongdae; DiSpririto, Alan A; Lee, Sung-Woo; Hartsel, Scott; McEllistrem, Marcus T

    2014-01-14

    The present disclosures provides isolated or purified compounds, each of which bind to a metal atom. Generally, the compounds are small in size (e.g., molecular weight of less than about 1 kDa) and peptidic in nature, inasmuch as the compounds comprise amino acids. In some embodiments, the compound comprises a structure of Formula I; M.sub.1-P.sub.1-M.sub.2-P.sub.2 wherein each of P.sub.1 and P.sub.2 is a peptide comprising at least two amino acids, M.sub.1 is a first metal binding moiety comprising a substituted imidazolone ring, M.sub.2 is a second metal binding moiety comprising a substituted oxazolone ring, and wherein M.sub.1 and M.sub.2 bind to a single metal atom. Also provided are related complexes, conjugates, cells which synthesize the compounds of the present disclosures, substantially homogenous cultures thereof, kits and compositions, and methods of making or using the materials of the present disclosures.

  13. SB LiMotive | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEastCarbon Development | OpenGmbH Jump

  14. Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3...

    Office of Scientific and Technical Information (OSTI)

    Energy Sciences (SC-22) Country of Publication: United States Language: English Subject: solar (thermal), phonons, thermal conductivity, thermoelectric, mechanical behavior,...

  15. Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18Sb1...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    observed here must be considered in the search for a better understanding of high-performance thermoelectric materials. URL: Link to article - American Institute of Physics...

  16. International Projects: Education Grant value over $250,000

    E-Print Network [OSTI]

    , Guinea, Guinea-Bissau, Kenya, Lesotho, Liberia, Madagascar, Malawi, Mali, Mauritius, Mozambique, Namibia

  17. . 16 (9. ).

    E-Print Network [OSTI]

    , Lesotho, Liberia, Malawi, Malta, Mauritius, Namibia, Nauru, New Zealand, Nigeria, Pakistan, Palau, Papua

  18. -TOEFL ITP -(S-TOPIK, TOEFL, IELTS, TEPS)

    E-Print Network [OSTI]

    , Lesotho, Liberia, Malawi, Malta, Ma uritius, Namibia, Nauru, New Zealand, Nigeria, Pakistan, Palau, Papua

  19. MSU at Work in Africa: A Unique Capacity

    E-Print Network [OSTI]

    , Ivory Coast, Kenya, Liberia, Malawi, Mali, Morocco, Mozambique, Namibia, Nigeria, Rwanda, Senegal, South

  20. University Health Center Name The University of Georgia UGA ID # 81

    E-Print Network [OSTI]

    Kissinger, Jessica

    - Iran Myanmar Singapore Yemen Colombia Iraq Namibia Solomon Islands Zambia Comoros Japan Nauru Somalia

  1. Symposium Registration

    E-Print Network [OSTI]

    Mexico. Micronesia. Moldova. Monaco. Mongolia. Montenegro. Morocco. Mozambique. Myanmar. Namibia. Nauru. Nepal. Netherlands. Netherlands Antilles.

  2. SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations

    E-Print Network [OSTI]

    . CHAPTER 4. DEVELOPMENT, REGULATION, AND CONSERVATION OF OIL AND GAS RESOURCES Subchapter 2. Environmental for those operations from the Division. NOTE: Authority cited: Sections 3013 and 3160, Public Resources Code. Reference: Sections 3106, 3160, and 3203 Public Resources Code. Article 2. Definitions 1761. Well

  3. Local Immigration Prosecution: A Study of Arizona Before SB 1070

    E-Print Network [OSTI]

    Eagly, Ingrid V.

    2011-01-01

    such as aliens with criminal records or those implicated instatistics, lower-court criminal records, prosecu- tionwith a limited criminal record. Given the low advisory

  4. Electronic-Structure of the Semimetals Bi and Sb 

    E-Print Network [OSTI]

    LIU, Y.; Allen, Roland E.

    1995-01-01

    these semimetallic properties quantitatively, and it should, therefore, be useful for calculations of the electronic properties of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices....

  5. Local Immigration Prosecution: A Study of Arizona Before SB 1070

    E-Print Network [OSTI]

    Eagly, Ingrid V.

    2011-01-01

    Pratheepan Gulasekaram, Aliens With Guns: Equal Protection,illegal reentry, and alien smuggling—which all require proofthat it believes the 2005 alien smuggling statute ought to

  6. Self-Assembled ErSb Nanostructures with Optical Applications...

    Office of Scientific and Technical Information (OSTI)

    electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable...

  7. Synthesis, Characterization and Applications of InSb Semiconductor Nanowires

    E-Print Network [OSTI]

    Paul, Rajat Kanti

    2011-01-01

    and semiconductor thin films and nanostructures [10, 11]. Recent development of graphene (one atom thick 2D

  8. SB 375: Promise, Compromise and the New Urban Landscape

    E-Print Network [OSTI]

    Darakjian, John

    2009-01-01

    successful smart- growth programs in cities like Portland,encourage smart growth and discourage those cities choosingsmart growth, then-mayor James Hahn and the Los Angeles City

  9. Criticality Safety Code Validation with LWBR’s SB Cores

    SciTech Connect (OSTI)

    Putman, Valerie Lee

    2003-01-01

    The first set of critical experiments from the Shippingport Light Water Breeder Reactor Program included eight, simple geometry critical cores built with 233UO2-ZrO2, 235UO2-ZrO2, ThO2, and ThO2-233UO2 nuclear materials. These cores are evaluated, described, and modeled to provide benchmarks and validation information for INEEL criticality safety calculation methodology. In addition to consistency with INEEL methodology, benchmark development and nuclear data are consistent with International Criticality Safety Benchmark Evaluation Project methodology.Section 1 of this report introduces the experiments and the reason they are useful for validating some INEEL criticality safety calculations. Section 2 provides detailed experiment descriptions based on currently available experiment reports. Section 3 identifies criticality safety validation requirement sources and summarizes requirements that most affect this report. Section 4 identifies relevant hand calculation and computer code calculation methodologies used in the experiment evaluation, benchmark development, and validation calculations. Section 5 provides a detailed experiment evaluation. This section identifies resolutions for currently unavailable and discrepant information. Section 5 also reports calculated experiment uncertainty effects. Section 6 describes the developed benchmarks. Section 6 includes calculated sensitivities to various benchmark features and parameters. Section 7 summarizes validation results. Appendices describe various assumptions and their bases, list experimenter calculations results for items that were independently calculated for this validation work, report other information gathered and developed by SCIENTEC personnel while evaluating these same experiments, and list benchmark sample input and miscellaneous supplementary data.

  10. Modelling InSb Czochralski Growth Tark Bouhennache1

    E-Print Network [OSTI]

    Stockie, John

    to ensure the reduction of any InOx compounds that may be produced. This addition of hydrogen necessitates

  11. Health and Wellness Services PO Box 642302, Pullman, WA 99164-2302

    E-Print Network [OSTI]

    (Liberia, Sierra Leone, Nigeria, and Guinea) and the recent case of the traveler from Liberia presenting to Guinea, Liberia, Nigeria, and Sierra Leone. The IDRT will continue to monitor the evolving situation

  12. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA |

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergy HeadquartersFuel Cycle | Department| Department of EnergyNM,

  13. DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergy HeadquartersFuel Cycle | Department of Energy DOE Awards UpClifton View Homes

  14. Who We Were, Is Not Who We Are: Wa.zha.zhe Representations, 1960-2010

    E-Print Network [OSTI]

    Smith, Thomas Edward

    2013-05-31

    My thesis examines whether the over-use of outdated descriptions of Osage Indians contributes to the perpetuation of stereotypes through an examination of the relationship between the historical and anthropological texts and museum exhibits produced...

  15. W.A. Parish Post-Combustion CO{sub 2} Capture and Sequestration...

    Office of Scientific and Technical Information (OSTI)

    COsub 2 Capture and Sequestration Project Phase 1 Definition Armpriester, Anthony; Smith, Roger; Scheriffius, Jeff; Smyth, Rebecca; Istre, Michael 20 FOSSIL-FUELED POWER...

  16. DOE Zero Energy Ready Home Case Study: TC Legend Homes — Cedarwood, Bellingham, WA

    SciTech Connect (OSTI)

    none,

    2014-09-01

    This house was the Grand Winner in the Affordable Builder category of the 2014 Housing Innovation Awards, and has 6-inch SIP walls, a 10-inch structural insulated panel roof, and insulating concrete forms foundation walls with R-20 high-density rigid EPS foam under the slab.A single ductless heat pump heats and cools the home, which also gets passive solar heating from south-facing triple-pane windows that heat a concrete slab floor plus a connected greenhouse.

  17. Best Practices Case Study: New Tradition Homes - Landover Commons, Vancouver, WA

    SciTech Connect (OSTI)

    none,

    2010-09-01

    Case study of New Tradition Homes who saved 26% over Washington state’s energy code by moving ducts inside conditioned space, upgrading the furnace, increasing attic insulation to R-49, and improving air sealing. This added $3,600 to the initial cost or $290 in increased annual mortgage costs but saved $991 per year for an annual net cash back to the homeowner of $700.

  18. Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA

    E-Print Network [OSTI]

    Bonneville is a regional agency that markets federal hydropower and augments its power supply with market, everyday citizens, to pay illegally inflated power costs. Because of this, Bonneville should have the legal costs that are in excess of reasonable prices for power. FERC should work strictly with everyday

  19. DOE ZERH Case Study: TC Legend Homes, Bellingham Power House, Bellingham, WA

    SciTech Connect (OSTI)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the marine climate that got HERS 34 without PV or HERS -12 with PV, with 6” SIP walls and 10” SIP roof; R-28 ICF around slab, R-20 rigid foam under slab; radiant floor heat and passive design; air-to-water heat pump COP 4.4; HRV; earth tube ventilation; triple-pane windows, 100% LED.

  20. 7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970

    E-Print Network [OSTI]

    electricity generating system possible. Sincerely, Robert D. Kahn, Ed.D. Executive Director cc: Larry Cassidy to acquire new generation assets. This conclusion, also reached by the Comprehensive Review of the Northwest investments to be made. The fundamentals underlying the Northwest energy system continue to point to the need