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1

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect (OSTI)

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

2

Ar plasma induced deep levels in epitaxial n-GaAs  

SciTech Connect (OSTI)

Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E{sub c} - 0.04 eV, E{sub c} - 0.07 eV, E{sub c} - 0.19 eV, E{sub c} - 0.31 eV, E{sub c} - 0.53 eV, and E{sub c} - 0.61 eV). The trap, E{sub c} - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E{sub c} - 0.31 eV and E{sub c} - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

Venter, A.; Nyamhere, C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, V. l. [Technische Universitaet, Dresden, 01062 Dresden (Germany)

2012-01-01T23:59:59.000Z

3

Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions  

SciTech Connect (OSTI)

Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

Venugopal, V.; Basu, T.; Garg, S.; Majumder, S.; Sarangi, S. N.; Som, T. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Das, P.; Bhattacharyya, S. R.; Chini, T. K. [Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India)

2010-10-04T23:59:59.000Z

4

Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases  

SciTech Connect (OSTI)

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2??m/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

Rawal, Dipendra Singh, E-mail: dsrawal15@gmail.com; Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India)

2014-05-15T23:59:59.000Z

5

WA_97_032_CHEMICAL_INDUSTRY_ENVIROMENTAL_TECHNOLOGY_PROJECTS...  

Broader source: Energy.gov (indexed) [DOE]

2CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJEC...

6

WA_00_030_ASE_AMERICAS_Request_to_Assign_Title_to_Waiver-Inv...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA03032RWESCHOTTSOLARINCWaiverof...

7

In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

8

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes  

SciTech Connect (OSTI)

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

2010-07-15T23:59:59.000Z

9

WA_1995_018_OPTICAL_COATING_LABORATORY_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICAL...

10

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04028AIRPRODUCTSANDCHEMICAL...

11

WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...  

Broader source: Energy.gov (indexed) [DOE]

WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

12

WA_1994010__SCHWITZER_U.S._INC_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1994007KYOCERAINDUSTRIALCERAMICSCORPORATIONWaivero.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA02028TRANECOWaiverofDomesti...

13

WA_04_009_ROCKWELL_SCIENTIFIC_CO_Wailve_of_Domestic_And_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA00030ASEAMERICASRequesttoAssign...

14

WA_1995_019_DONNELLY_CORPORATION_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA00030ASEAMERICASRequesttoAssignTitletoWaiver-Inv.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA04009ROCKWELLSCIENTIFICCOWailve...

15

WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

16

WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

17

WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

18

WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

19

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

20

WA_00_007_COMBUSTION_ENGINEERING_INC_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

07COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomestica...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

22

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

23

Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar? = C6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (L = HC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3  

E-Print Network [OSTI]

6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and [Ni(CO) 3 (GaL)] (LC(CH 3 )N(C 6 H 3 -2,6-iPr 2 )] 2 ): Thermal DecompositionC 6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and GaL (L = HC[C(Me)

Serrano, Oracio; Hoppe, Elke; Power, Philip P.

2010-01-01T23:59:59.000Z

24

WA_98_016_ABB_POWER_T_AND_D_COMPANY_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2011-046 Advance Patent Waiver W(A)2009-016 WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic...

25

WA_04_085_THE_BOEING_COMPANY_Waiver_of_domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2010-018 Advance Patent Waiver W(A)2007-012 WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand...

26

WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

27

Advance Patent Waiver W(A)2005-006 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

28

PO Box 2349 White Salmon, WA 98672  

E-Print Network [OSTI]

PO Box 2349 White Salmon, WA 98672 509.493.4468 www.newbuildings.org COMMERCIAL ROOFTOP HVAC ENERGY from utility-sponsored field service measures on small (typically 3-10 tons) commercial rooftop unitary utility-funded RTU service programs. New Buildings Institute (NBI) staff has been managing the research

29

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

30

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

31

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Broader source: Energy.gov (indexed) [DOE]

15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

32

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

33

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

34

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Broader source: Energy.gov (indexed) [DOE]

1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

35

WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

36

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

COMPANYWaiverofDomesticandForeign.pdf More Documents & Publications WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA98008GENERALELECTRICCOMPANYWaive...

37

WA_03_021_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Broader source: Energy.gov (indexed) [DOE]

1DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRight...

38

WA_04_082_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Broader source: Energy.gov (indexed) [DOE]

82DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRigh...

39

WA_04_025_AIR_LIQUIDE_AMERICA_Waiver_of_Patent_Rights_under_...  

Broader source: Energy.gov (indexed) [DOE]

25AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsund...

40

WA_1993_003_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

3003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1993003EATONCORPORATIONWaiverofDomesticandFor...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

WA_1994_011_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

1EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

42

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

34NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFo...

43

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

44

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

45

WA_04_080_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Patent_R...  

Broader source: Energy.gov (indexed) [DOE]

80HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPaten...

46

,"Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Sumas, WA...

47

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION...  

Broader source: Energy.gov (indexed) [DOE]

it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination Categorical Exclusion Reviewer's...

48

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FITCH RATES ENERGY NORTHWEST (WA) ELECTRIC REV REF BONDS 'AA'; OUTLOOK STABLE Fitch Ratings-Austin-08 April 2015: Fitch Ratings assigns 'AA' ratings to the following Energy...

49

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergyCTBarreis aCallahanWind FarmAddSRML Map Files Jump to:WA Jump to:

50

Advance Patent Waiver W(A)2010-042 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2010-042 More Documents & Publications Advance Patent Waiver W(A)2005-023 WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf ClassWaiverWC-2003-001.pdf...

51

Advance Patent Waiver W(A)2012-003 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2012-003 More Documents & Publications Advance Patent Waiver W(A)2013-019 Class Patent Waiver W(C)2012-003 WA02048EATONCORPORATIONWaviverofPatentRightsUnderA...

52

waTer economics. environmenTand Policy  

E-Print Network [OSTI]

41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

Botea, Adi

53

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Broader source: Energy.gov (indexed) [DOE]

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

54

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

55

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Broader source: Energy.gov (indexed) [DOE]

POWERWaiverofPatentRightsinPerformance.pdf More Documents & Publications WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99022AIRPRODUCTSANDCHEMICAL...

56

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Broader source: Energy.gov (indexed) [DOE]

2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

57

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

2FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO...

58

WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...  

Broader source: Energy.gov (indexed) [DOE]

18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

59

WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

IRTECHNOLOGIESWaiverofDomesticandFor.pdf More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02021H2GENINNOVATIONSWaiverof...

60

WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...  

Broader source: Energy.gov (indexed) [DOE]

24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Broader source: Energy.gov (indexed) [DOE]

1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

62

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Broader source: Energy.gov (indexed) [DOE]

2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

63

WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...  

Broader source: Energy.gov (indexed) [DOE]

01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

64

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Broader source: Energy.gov (indexed) [DOE]

04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

65

WA_04_074_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_I...  

Broader source: Energy.gov (indexed) [DOE]

74EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeignI.pdf WA04074EATONCORPORATIONWaiverofDomesticandForeig...

66

WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A...  

Broader source: Energy.gov (indexed) [DOE]

48EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnde...

67

WA_1994_017_GOLDEN_TECHNOLOGIES_COMPANY_Waiver_of_Domestic_a...  

Broader source: Energy.gov (indexed) [DOE]

for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign.pdf WA1994014GOLDENTECHNOLOGIESCOMPA...

68

WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_...  

Broader source: Energy.gov (indexed) [DOE]

59EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUnder...

69

Effect of ball milling and post-annealing on magnetic properties of Ni49.8Mn28.5Ga21.7 alloy powders  

E-Print Network [OSTI]

, The University of Western Australia, Crawley WA6009, Australia c Department of Advanced Materials mechanical energy absorption [8,9]. Ni­Mn­Ga powders have been prepared by various methods, including spark

Zheng, Yufeng

70

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

71

RAPID/Roadmap/19-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change9-WA-e

72

RAPID/Roadmap/3-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access Overview 3-WA-b

73

RAPID/Roadmap/3-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land AccessWA-e Access

74

RAPID/Roadmap/4-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State Exploration Process 4-WA-a State

75

RAPID/Roadmap/6-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bc <6-WA-a

76

RAPID/Roadmap/6-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bcRAPID/Roadmap/6-WA-d <

77

RAPID/Roadmap/9-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc <9-FD-aa9-WA-a

78

RAPID/Roadmap/9-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc9-WA-c State

79

Advance Patent Waiver W(A)2009-039 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Advance Patent Waiver W(A)2010-007 Advance Patent Waiver W(A)2012-034 Stabilized Lithium Metal Powder, Enabling Material and Revolutionary Technology for High Energy Li-ion...

80

WA_00_013_GENECOR_INTERNATIONAL_Waiver_of_US_Competitiveness...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofUSCompetitiveness.pdf More Documents & Publications U.S. Biofuels Industry: Mind the Gap Advance Patent Waiver W(A)2008-045 WA01008NOVOZYMEBIOTECHWaiverofDomesti...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

carleton universityottaWa, canaDa international  

E-Print Network [OSTI]

carleton universityottaWa, canaDa international aDmissions 2014 #12;Carleton University provides high-quality education to students from Canada and around the world. We offer a wide range of programs and be a part of this extraordinary university! Wonderful country The United Nations consistently ranks Canada

Dawson, Jeff W.

82

Computer Science & Engineering Box 352350 Seattle, WA 98195-2350  

E-Print Network [OSTI]

Computer Science & Engineering #12;Box 352350 Seattle, WA 98195-2350 Nonprofit Org US Postage PAID in the Computer Science Department. He is a superb researcher in the design of interactive, visual data, Carnegie Mellon University's Finmeccanica Associate Professor in the School of Computer Science, is widely

Borenstein, Elhanan

83

EIS-0397: Lyle Falls Fish Passage Project, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

84

WA_1993_022_NORTON_COMPANY_Waiver_of_Domestic_and_Foreign_Ri...  

Broader source: Energy.gov (indexed) [DOE]

Golden Technologies Company, Inc. Request for An Advance Waiver of Domestic and Foreign Rights. January 10, 1995 WA1994011EATONCORPORATIONWaiverofDomesticandForeign...

85

Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide-area algorithms for  

E-Print Network [OSTI]

- 1 - Proceedings of the Western Protective Relay Conference, Spokane, WA, 2006 New wide the critical areas automatically by using the synchrophasors, and proceed to mitigate the instability

86

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunways JV Jump to: navigation, search Name: BayWa

87

RAPID/Roadmap/12-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a State12-ID-a12-WA-a Live Wildlife

88

RAPID/Roadmap/12-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a State12-ID-a12-WA-a Live

89

RAPID/Roadmap/13-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a State Land UseWA-a <

90

RAPID/Roadmap/14-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-c

91

RAPID/Roadmap/14-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-cd <

92

RAPID/Roadmap/14-WA-e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado < RAPID‎ |1-TX-a13-ID-a4-NV-c14-OR-dd4-WA-cd <e

93

RAPID/Roadmap/18-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎ |18-MT-b8-WA-a Underground

94

RAPID/Roadmap/18-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎ |18-MT-b8-WA-a

95

RAPID/Roadmap/19-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎g <RAPID/Roadmap/19-WA-a

96

RAPID/Roadmap/19-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change of

97

RAPID/Roadmap/19-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or Change

98

RAPID/Roadmap/19-WA-f | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a < RAPID‎gWA-c Transfer or

99

RAPID/Roadmap/3-WA-c | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access Overview

100

RAPID/Roadmap/3-WA-d | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a <3-FD-d3-WA-b Land Access

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

RAPID/Roadmap/6-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a State6-CO-bc

102

RAPID/Roadmap/7-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e BLM/CEC7-OR-d

103

RAPID/Roadmap/8-WA-a | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc < RAPID‎

104

RAPID/Roadmap/9-WA-b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColorado <17-HI-a4-WA-a7-CA-e8-HI-a8-NV-cc

105

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network [OSTI]

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

106

VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomen Owned SmallOf The 2012Nuclear Guide Remote Access08:Energy 94:Service2 1

107

VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomen Owned SmallOf The 2012Nuclear Guide Remote Access08:Energy 94:Service2 1 2 1

108

VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomen Owned SmallOf The 2012Nuclear Guide Remote Access08:Energy 94:Service2 1 2 1

109

Electrical impedance tomography and Calderon's Department of Mathematics, University of Washington, Seattle, WA 98195, USA  

E-Print Network [OSTI]

Electrical impedance tomography and Calder´on's problem G Uhlmann Department of Mathematics, University of Washington, Seattle, WA 98195, USA E-mail: gunther@math.washington.edu Abstract. We survey mathematical developments in the inverse method of Electrical Impedance Tomography which consists

Uhlmann, Gunther

110

An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg,  

E-Print Network [OSTI]

An International Pellet Ablation Database L.R. Baylor, A. Geraud*, W.A. Houlberg, D. Frigione+, M of an international pellet ablation database (IPADBASE) that has been assembled to enable studies of pellet ablation theories that are used to describe the physics of an ablating fuel pellet in a tokamak plasma. The database

111

WA-RD 470.1 June 1999 Demand Forecasting for Rural Transit  

E-Print Network [OSTI]

WA-RD 470.1 June 1999 Demand Forecasting for Rural Transit This summary describes the key findings of a WSDOT project that is documented more fully in the technical report titled "Demand Forecasting for Rural to Washington for predicting demand for rural public transportation. Three Washington-based models were

112

7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970  

E-Print Network [OSTI]

7900 SE 28th Street, Suite 200 Mercer, Island, WA 98040-2970 v 206.236.7200 f 206.236.3019 www-standing rivalries over the distribution of the Northwest's premiere asset. It will allow the customers to apply to acquire new generation assets. This conclusion, also reached by the Comprehensive Review of the Northwest

113

U.S. NUclear WaSte techNical revieW Board  

E-Print Network [OSTI]

U.S. NUclear WaSte techNical revieW Board Report to The U.S. Congress and The Secretary STATES NUCLEAR WASTE TECHNICAL REVIEW BOARD 2300 Clarendon Boulevard, Suite 1300 Arlington, VA 22201 June Speaker Hastert, Senator Stevens, and Secretary Bodman: The U.S. Nuclear Waste Technical Review Board

114

Natural Data Mining Techniques J. N. Kok and W.A. Kosters  

E-Print Network [OSTI]

, enrichment of data (for example using external data bases), coding, data mining and reporting. In data support for their operations. A usual problem in the #12;eld of data mining is that the combinationNatural Data Mining Techniques J. N. Kok and W.A. Kosters Leiden Institute of Advanced Computer

Kosters, Walter

115

Ar-40/Ar-39 Age Constraints for the Jaramillo Normal Subchron...  

Open Energy Info (EERE)

oxygen isotope, climate record calibration of the astronomical timescale proposed by Johnson (1982) and Shackleton et al. (1990). Ar-40Ar-39 ages of a normally magnetized...

116

Very-high-order harmonic generation from Ar atoms and Ar+ ions in superintense pulsed laser  

E-Print Network [OSTI]

Very-high-order harmonic generation from Ar atoms and Ar+ ions in superintense pulsed laser fields-high-order harmonic generation HHG from Ar atoms and Ar+ ions by means of the self-interaction-free time-order harmonic generation HHG is one of the most rapidly developing topics in the field of laser-atom molecule

Chu, Shih-I

117

Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments  

E-Print Network [OSTI]

Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

A. Ster; T. Csorgo; B. Lorstad

1998-09-28T23:59:59.000Z

118

Advance Patent Waiver W(A)2011-034 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: Top Five EERE Blog Posts1-034 Advance Patent Waiver W(A)2011-034 This document

119

Chemical accelerator studies of reaction dynamics: Ar^+ + CH4 ? ArH^+ + CH3  

E-Print Network [OSTI]

, the reactions Ar+ + GH4 - ArH+ + CHs Ar+ + CD4 - ArD+ + CDs (2a) (2b) The Journal of Chemical Physics. Vol. 62. No.7. 1 April 1975 were studied over the energy range 0.4-25 eV c. m. Velocity and angular distributions of the ionic products have been...!.) Consequently, the dissociation energy Do(Ar-H+} ~ 3.90 eV, resulting in energies of 6.06 and 6.24 eV for dissociation of ArH+ into Ar+(2PS/2} + Hand Ar+(2pI/2} +H, respectively. With a value of D(H-CHs} =4.406 eV,27 the following reaction enthalpies are ob...

Wyatt, J. R.; Strattan, L. W.; Snyder, S. C.; Hierl, Peter M.

1975-01-01T23:59:59.000Z

120

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

ARS Energy Water and Sustainability Program  

Broader source: Energy.gov [DOE]

Presentation covers the ARS Energy Water and Sustainability Program given at the Spring 2010 Federal Utility Partnership Working Group (FUPWG) meeting in Rapid City, South Dakota.

122

AR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

created to provide remote handling capabilities for the laboratory in its role as a nuclear testing station. In the early 1990s, the group branched into formal robotics,...

123

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

124

Method of plasma etching Ga-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

125

Method of plasma etching GA-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

126

ar da regiao: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

127

ar em amostras: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

128

abdominalfistel syv ar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

129

ar na entrada: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

130

ar expirado na: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

131

ar acu vjum: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

132

ar avaliacao da: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

133

ar efter kolecystektomi: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

above the transition from evaporitic to continental sediments, it implies that the Fortuna evaporites Elsevier B.V. All rights reserved. Keywords: 40 Ar39 Ar; Volcanism;...

134

Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice  

E-Print Network [OSTI]

of Western Australia, Crawley, WA 6009, Australia J. B. Rodriguez, E. Plis, and S. Krishna Center for High, The University of Western Australia, Crawley, WA 6009, Australia Received 25 October 2007; accepted 7 January temperature studies in the range 50­300 K show that the carrier is associated with an activation energy of 0

Krishna, Sanjay

135

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel  

E-Print Network [OSTI]

scheme to assess tool durability and tool life in the friction stir welding (FSW) of difficult alumin referencing is freely avail- able at: http://tinyurl.com/mst-fsw. Tools for friction stir welding (FSWOctober 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir

Cambridge, University of

136

E-Print Network 3.0 - ar gas filled Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and the origin of carbonatites Summary: gas abundance ratios (for example HeAr and CO2 Ar), which change upon degassing owing to solubility... 36 Ar against 40 Ar36 Ar for...

137

40Ar/39Ar Geochronology of Post-Valles Caldera Rhyolites, Jemez...  

Open Energy Info (EERE)

during which rhyolite domes, flows, and pyroclastic rocks were emplaced from ring fracture vents. Previously, ages were based on limited K-Ar dating and stratigraphic...

138

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

139

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

140

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX  

Broader source: Energy.gov [DOE]

This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

142

A review of "Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625." by Charles W.A. Prior  

E-Print Network [OSTI]

REVIEWS 151 Charles W.A. Prior. Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625. Cambridge: Cambridge University Press, 2005. xiv + 294 pp. $85.00. Review by GRAHAM PARRY, UNIVERSITY OF YORK. Defining the Jacobean...

Parry, Graham

2006-01-01T23:59:59.000Z

143

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network [OSTI]

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

144

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

145

FIANTD200725 arXiv:0712.3526v2  

E-Print Network [OSTI]

########### FIAN­TD­2007­25 arXiv:0712.3526v2 [hep­th] 26 Jan 2012 FIAN­TD­2007­25 arXiv: 0712.3526

146

Old Sol's new use Fourteen solar ar-  

E-Print Network [OSTI]

Inside &ONLINE Old Sol's new use Fourteen solar ar- rays grace the rooftops of two HRES buildings therebelgroupInterahamwefoundheron the road in a remote region in the eastern Democratic Republic of the Congo- ductingfocusgroupinterviewswithmem- bers of the community. Looking horrorin theface HHI researchers don't flinch in examination

147

arXiv:0902.3928v1 [astroph.GA  

E-Print Network [OSTI]

observations this would yield the distribution of mass among the various components (including dark matter GHz methanol masers are indicated with dark blue dots and those from water masers are indicated

Brunthaler, Andreas

148

40Ar/39Ar Dating of the Bandelier Tuff and San Diego Canyon Ignimbrite...  

Open Energy Info (EERE)

(LBT) resulted in formation of the Toledo Caldera. These events were previously dated by K-Ar at 1.12 &plusmin; 0.03 Ma and 1.45 &plusmin; 0.06 Ma, respectively. Pre-Bandelier...

149

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

150

Decommissioning samples from the Ft. Lewis, WA, solvent refined coal pilot plant: chemical analysis and biological testing  

SciTech Connect (OSTI)

This report presents the results from chemical analyses and limited biological assays of three sets of samples from the Ft. Lewis, WA solvent refined coal (SRC) pilot plant. The samples were collected during the process of decommissioning this facility. Chemical composition was determined for chemical class fractions of the samples by using high-resolution gas chromatography (GC), high-resolution GC/mass spectrometry (MS) and high-resolution MS. Biological activity was measuring using both the histidine reversion microbial mutagenicity assay with Salmonella typhimurium, TA98 and an initiation/promotion mouse-skin tumorigenicity assay. 19 refs., 7 figs., 27 tabs.

Weimer, W.C.; Wright, C.W.

1985-10-01T23:59:59.000Z

151

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

152

VOLUME 78, NUMBER 2 P H Y S I C A L R E V I E W L E T T E R S 13 JANUARY 1997 Observation of Coherently Controlled Photocurrent in Unbiased, Bulk GaAs  

E-Print Network [OSTI]

-charge fields and enhanced second-harmonic generation in optical fibers [7]. Although the results in LT-GaAs are measured for injected carrier densities as low as 1014 cm23 and for peak irradiances.50.Ar, 42.65.­k The idea of controlling optical, physical, and chemical processes in matter using

Van Driel, Henry M.

153

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

154

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

155

Cavity nucleation and evolution in He-implanted Si and GaAs  

SciTech Connect (OSTI)

The criteria for forming stable cavities by He{sup +} implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at. % He to form a continuous layer of cavities after annealing at 700{degrees}C. The cavities are located at dislocations and planar defects. Implanting peak He concentrations just above this threshold produces narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400{degrees}C, with additional annealing at 400{degrees}C to outgas the He. This method forms 1.5--3.5 nm cavities that are often on [111] planar defects.

Follstaedt, D.M.; Myers, S.M.; Petersen, G.A.; Barbour, J.C.

1995-12-01T23:59:59.000Z

156

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

157

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

158

ar diffusion coefficient: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

diffusion is examined. Kazuhiko Seki; Saurabh Mogre; Shigeyuki Komura 2014-02-05 4 Fractal diffusion coefficient from dynamical zeta functions Nonlinear Sciences (arXiv)...

159

ArKion Systems | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300AlgoilEnergy Information theDevelopment Co. Place:Aquilla, Texas:ArKion

160

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

162

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI...

163

Annual Energy Outlook 2012  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

164

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

2013 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

165

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Coal supply regions Figure F6. Coal Supply Regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

166

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

2012 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

167

International Conference on Advanced Robotics ICAR 2005 July 2005, Seattle WA Abstract--Integrating human and robot into a single system  

E-Print Network [OSTI]

The 12th International Conference on Advanced Robotics ­ ICAR 2005 ­ July 2005, Seattle WA Abstract to the fine manipulation joints (the wrist). An inverted phenomenon was observed during fine manipulation) and functions as a human- amplifier. Its joints and links correspond to those of the human body, and its

Rosen, Jacob

168

Proc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169184. Selecting Tests and Identifying Test Coverage Requirements for  

E-Print Network [OSTI]

of structural coverage crite­ ria. Our technique partitions an existing test suite into two subsets: testsProc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169­184. Selecting Tests and Identifying Test Coverage Requirements for Modified Software* Gregg Rothermel and Mary

Rothermel, Gregg

169

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

170

Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA  

E-Print Network [OSTI]

We report results of air monitoring started due to the recent natural catastrophe on 11 March 2011 in Japan and the severe ensuing damage to the Fukushima Dai-ichi nuclear reactor complex. On 17-18 March 2011, we registered the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. We measured the evolution of the activities over a period of 23 days at the end of which the activities had mostly fallen below our detection limit. The highest detected activity amounted to 4.4 +/- 1.3 mBq/m^3 of 131-I on 19-20 March.

J. Diaz Leon; D. A. Jaffe; J. Kaspar; A. Knecht; M. L. Miller; R. G. H. Robertson; A. G. Schubert

2011-08-23T23:59:59.000Z

171

Revised isotopic (40 Ar) age for the lamproite volcano of  

E-Print Network [OSTI]

Revised isotopic (40 Ar/39 Ar) age for the lamproite volcano of Cabezos Negros, Fortuna Basin (lamproites) of the Fortuna Basin in southeast Spain. This age is significantly older than earlier reported K. Because the volcanic rocks are intercalated in the stratigraphic sequence of the Fortuna Basin directly

Utrecht, Universiteit

172

FIES ThAr atlas orders 157 79  

E-Print Network [OSTI]

FIES ThAr atlas orders 157 ­ 79 wavelength 3620 ­ 7260 °A Dec 2007 medium resolution file: FIql020001.fits John Telting Nordic Optical Telescope, La Palma, Spain #12;This ThAr atlas was made in Dec file used is FIql020001.fits. A halogen exposure (FIql020002.fits) was used to trace the orders

173

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

174

CHEMILUMINESCENT CHEMI-IONIZATION: Ar* + Ca AND THE CaAr+ EMISSION SPECTRUM  

SciTech Connect (OSTI)

A flowing afterglow chemiluminescence apparatus has been used to analyze visible fluorescence in the Ar* ({sup 3}P{sub 2}{sup o}) + Ca ({sup 1}S{sub 0}) reaction. The rate constants for production of Ca{sup +} ({sup 2}P{sub 3/2}{sup o}) and Ca{sup +} ({sup 2}P{sub 1/2}{sup o}) were measured to be 1.6 x 10{sup -10} cm{sup 3}-molecule{sup -1} sec{sup -1} and 3.2 x 10{sup -11} cm{sup 3} molecule{sup -1} sec{sup -1}, respectively. These results demonstrate a transfer of the total electronic angular momentum polarization in Ar* tothe excited ion levels. The molecular band spectrum of the associative ionization product CaAr{sup +} (A{sup 2}{Pi}) was observed. Molecular fluorescence constituted 14% of the total fluorescence from all ion products. This spectrum was analyzed with a model (exp-Z4) potential, yielding, for the ground state, {Chi}{sup 2}{Sigma}{sup +}, R{sub e} = 2.8 {angstrom}, {omega}''{sub e} = 87 cm{sup -1}, and D''{sub e} = 1000 cm{sup -1}, and, for the A{sup 2}{Pi} state, R{sub e} = 2.6 {angstrom}, {omega}'{sub e} = 200 cm{sup -1}, and D'{sub e} = 4900 cm{sup -1}. The nascent internal state distribution in CaAr{sup +} is found to consist of a fairly narrow range of high vibrational levels. The analysis of spectra from chemiluminescent reaction is a well established technique for elucidating the product state distributions of elementary processes. In this paper, they use the analysis of the chemiluminescent chemi-ionization reactions between metastable argon atoms and calcium atoms to expose the dynamics of associative ionization (AI) and to measure the branching ratios for chemi-ionization into more than one product channel.

Hartman, Dennis C.; Winn, John S.

1980-09-01T23:59:59.000Z

175

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

176

Forschung Hochenergiephysik/Standort Zeuthen P.J. PHILLIPS, G. BERDEN, W.A. GILLESPIE, ST. JAMISON,  

E-Print Network [OSTI]

. The Optical Replica Synthesizer in Flash. Weitere Vortr¨age B. STEFFEN Electro-Optic Longitudinal BunchRevD.75.102001 Detection of Atmospheric Muon Neutrinos with the IceCube 9-String Detector. Phys. Rev. D 76 for a Diffuse Flux of Muon Neutrinos with AMANDA-II. Phys. Rev. D 76 (2007) 042008 and arXiv:0705.1315 http

177

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

178

Combined U-Th/He and 40Ar/39Ar geochronology of post-shield lavas from the Mauna Kea and Kohala volcanoes, Hawaii  

SciTech Connect (OSTI)

Late Quaternary, post-shield lavas from the Mauna Kea and Kohala volcanoes on the Big Island of Hawaii have been dated using the {sup 40}Ar/{sup 39}Ar and U-Th/He methods. The objective of the study is to compare the recently demonstrated U-Th/He age method, which uses basaltic olivine phenocrysts, with {sup 40}Ar/{sup 39}Ar ages measured on groundmass from the same samples. As a corollary, the age data also increase the precision of the chronology of volcanism on the Big Island. For the U-Th/He ages, U, Th and He concentrations and isotopes were measured to account for U-series disequilibrium and initial He. Single analyses U-Th/He ages for Hamakua lavas from Mauna Kea are 87 {+-} 40 ka to 119 {+-} 23 ka (2{sigma} uncertainties), which are in general equal to or younger than {sup 40}Ar/{sup 39}Ar ages. Basalt from the Polulu sequence on Kohala gives a U-Th/He age of 354 {+-} 54 ka and a {sup 40}Ar/{sup 39}Ar age of 450 {+-} 40 ka. All of the U-Th/He ages, and all but one spurious {sup 40}Ar/{sup 39}Ar ages conform to the previously proposed stratigraphy and published {sup 14}C and K-Ar ages. The ages also compare favorably to U-Th whole rock-olivine ages calculated from {sup 238}U - {sup 230}Th disequilibria. The U-Th/He and {sup 40}Ar/{sup 39}Ar results agree best where there is a relatively large amount of radiogenic {sup 40}Ar (>10%), and where the {sup 40}Ar/{sup 36}Ar intercept calculated from the Ar isochron diagram is close to the atmospheric value. In two cases, it is not clear why U-Th/He and {sup 40}Ar/{sup 39}Ar ages do not agree within uncertainty. U-Th/He and {sup 40}Ar/{sup 39}Ar results diverge the most on a low-K transitional tholeiitic basalt with abundant olivine. For the most alkalic basalts with negligible olivine phenocrysts, U-Th/He ages were unattainable while {sup 40}Ar/{sup 39}Ar results provide good precision even on ages as low as 19 {+-} 4 ka. Hence, the strengths and weaknesses of the U-Th/He and {sup 40}Ar/{sup 39}Ar methods are complimentary for basalts with ages of order 100-500 ka.

Aciego, S.M.; Jourdan, F.; DePaolo, D.J.; Kennedy, B.M.; Renne, P.R.; Sims, K.W.W.

2009-10-01T23:59:59.000Z

179

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

180

Single-crystal sup 40 Ar/ sup 39 Ar dating of the Olorgesailie Formation, southern Kenya rift  

SciTech Connect (OSTI)

Single-crystal laser fusion {sup 40}Ar/{sup 39}Ar analyses and several conventional bulk fusion {sup 40}K- {sup 40}Ar dates have been used to determine the age of volcaniclastic strata within the Olorgesailie Formation and of associated volcanic and sedimentary units of the southern Kenya rift. In the principal exposures along the southern edge of the Legemunge Plain, the formation spans the interval from approximately 500 to 1,000 ka. Deposition continued to the east along the Ol Keju Nyiro river where a tuff near the top of the formation has been dated at 215 ka. In these exposures, the formation is unconformably overlain by sediments dated at 49 ka. A possible source for the Olorgesailie tephra, the Ol Doinyo Nyokie volcanic complex, contains as ash flow dated at {approximately} 1 Ma, extending the known age range of this complex to encompass that of virtually the entire Olorgesailie Formation in the Legemunge Plain. These geologic examples illustrate the importance of the single-crystal {sup 40}Ar/{sup 39}Ar dating technique whereby contaminant, altered, or otherwise aberrant grains can be identified and eliminated from the determination of eruptive ages for reworked or altered pyroclastic deposits. The authors have presented a computer-modeling procedure based on an inverse-isochron analysis that promotes a more objective approach to trimming {sup 40}Ar/{sup 39}Ar isotope data sets of this type.

Deino, A. (Geochronology Center of the Inst. of Human Origins, Berkeley, CA (United States)); Potts, R. (Smithsonian Institution, Washington, DC (United States))

1990-06-10T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

182

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

183

MUSCLE ACTIVITY DETECTION FROM MYOELECTRIC SIGNALS BASED ON THE AR-GARCH MODEL  

E-Print Network [OSTI]

MUSCLE ACTIVITY DETECTION FROM MYOELECTRIC SIGNALS BASED ON THE AR-GARCH MODEL Ghulam Rasool Heteroscedastic (AR-GARCH) process, which captures the heteroscedasticity of the signal. The Akaike information cri- terion test confirms that the AR-GARCH model better fits the EMG signal than the stationary AR

Bouaynaya, Nidhal

184

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

185

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

186

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

187

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

188

Ion acceleration in Ar-Xe and Ar-He plasmas. I. Electron energy distribution functions and ion composition  

SciTech Connect (OSTI)

Electron energy distribution functions (eedf), ion production, and ion composition are studied in Ar-Xe and Ar-He expanding helicon plasmas. It was found that under the conditions of constant total flow rate, Xe, in addition to Ar, changes the eedf from Maxwellian-like to Druyvesteyn-like with a shortening of the high energy tail at {approx}15 eV. The electron temperature exponentially decreases from {approx}7 eV in pure Ar plasma to {approx}4 eV in pure Xe plasma. Xenon ions dominate the ion population for Xe filling fractions greater than 10%. The plasma density increases by {approx}15% with increasing Xe fraction. For an Ar-He plasma, increasing the helium fraction increases the electron temperature from {approx}7 eV in pure Ar plasma to {approx}14 eV for a He filling fraction of 80%. The plasma density drops by more than three orders of magnitude from 1.14x10{sup 11} cm{sup -3} to 6.5x10{sup 7} cm{sup -3}. However, the inferred ion densities indicate that even at a helium fraction of 80%, argon ions significantly outnumber helium ions.

Biloiu, Ioana A.; Scime, Earl E. [Department of Physics, West Virginia University, Morganton, West Virginia 26506 (United States)

2010-11-15T23:59:59.000Z

189

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

190

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

SciTech Connect (OSTI)

Hexavalent Chromium is a widespread contaminant found in soil, sediment, and groundwater. In order to stimulate microbially-mediated reduction of Cr(VI), a poly-lactate compound (HRC) was injected into the Chromium-contaminated aquifer at the Hanford (WA) 100H site in 2004. Cr(VI) concentrations rapidly declined to below the detection limit and remained so for more than three years after injection. Based on the results of the bacterial community composition using high-density DNA 16S rRNA gene microarrays, we observed the community to transition through denitrifying, ironreducing and sulfate-reducing populations. As a result, we specifically focused isolation efforts on three bacterial species that were significant components of the community. Positive enrichments in defined anaerobic media resulted in the isolation of an iron-reducing Geobacter metallireducens-like isolate, a sulfate-reducing Desulfovibrio vukgaris-like strain and a nitrate-reducing Pseudomonas stutzeri-like isolate among several others. All of these isolates were capable of reducing Cr(VI) anoxically and have been submitted for genome sequencing to JGI. To further characterize the microbial, and geochemical mechanisms associated with in situ Cr(VI) reduction at the site, additional HRC was injected in 2008. The goal was to restimulate the indigenous microbial community and to regenerate the reducing conditions necessary for continued Cr(VI) bio-immobilization in the groundwater. Analysis of the microbial populations post-injection revealed that they recovered to a similar density as after the first injection in 2004. In this study, we present the results from our investigation into microbially-mediated Cr(VI) reduction at Hanford, and a comparison of the microbial community development following two HRC injections four years apart.

Chakraborty, Romy; Brodie, Eoin L; Faybishenko, Boris; Piceno, Yvette M; Tom, Lauren; Choudhuri, Swati; Beller, Harry R; Liu, Jenny; Torok, Tamas; Joyner, Dominique C; Joachimiak, Marcin P; Zhou, Aifen; Van Nostrand, Joy D; Zhou, Joe; Long, Phil E; Newcomer, Darrell R; Andersen, Gary L; Hazen, Terry C.

2010-05-17T23:59:59.000Z

191

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

192

Production of 37Ar in The University of Texas TRIGA reactor facility  

SciTech Connect (OSTI)

The detection of {sup 37}Ar is important for on-site inspections for the Comprehensive Nuclear-Test-Ban Treaty monitoring. In an underground nuclear explosion this radionuclide is produced by {sup 40}Ca(n,{alpha}){sup 37}Ar reaction in surrounding soil and rock. With a half-life of 35 days, {sup 37}Ar provides a signal useful for confirming the location of an underground nuclear event. An ultra-low-background proportional counter developed by Pacific Northwest National Laboratory is used to detect {sup 37}Ar, which decays via electron capture. The irradiation of Ar gas at natural enrichment in the 3L facility within the Mark II TRIGA reactor facility at The University of Texas at Austin provides a source of {sup 37}Ar for the calibration of the detector. The {sup 41}Ar activity is measured by the gamma activity using an HPGe detector after the sample is removed from the core. Using the {sup 41}Ar/{sup 37}Ar production ratio and the {sup 41}Ar activity, the amount of {sup 37}Ar created is calculated. The {sup 41}Ar decays quickly (half-life of 109.34 minutes) leaving a radioactive sample of high purity {sup 37}Ar and only trace levels of {sup 39}Ar.

Egnatuk, Christine M.; Lowrey, Justin; Biegalski, S.; Bowyer, Ted W.; Haas, Derek A.; Orrell, John L.; Woods, Vincent T.; Keillor, Martin E.

2011-06-19T23:59:59.000Z

193

National Radon Database. Volume 5. The EPA/state residential radon surveys: AR, IL, MD, MT, MS, TX, VA, WA and the Eastern Cherokee Nation, 1990-1992 (5 1/4 inch 1. 2mb) (for microcomputers). Data file  

SciTech Connect (OSTI)

The National Radon Database (NRDB) was developed by the United States Environmental Protection Agency (USEPA) to distribute information in two recent radon surveys: the EPA/State Residential Radon Surveys and the National Residential Radon Survey. The National Residential Radon Surveys collected annual average radon measurements on all levels of approximately 5,700 homes nationwide. Information collected during survey includes a detailed questionnaire on house characteristics, as well as radon measurements. The radon survey data for Volume 6 is contained on two diskettes. The data diskettes are accompanied by comprehensive documentation on the design and implementation of the survey, the development and use of sampling weights, a summary of survey results, and information concerning the household questionnaire.

Not Available

1992-01-01T23:59:59.000Z

194

National Radon Database. Volume 5. The EPA/state residential radon surveys: AR, IL, MD, MT, MS, TX, VA, WA, and the Eastern Cherokee Nation, 1990-1992 (3 1/2 inch, 1. 44mb) (for microcomputers). Data file  

SciTech Connect (OSTI)

The National Radon Database (NRDB) was developed by the United States Environmental Protection Agency (USEPA) to distribute information in two recent radon surveys: the EPA/State Residential Radon Surveys and the National Residential Radon Survey. The National Residential Radon Surveys collected annual average radon measurements on all levels of approximately 5,700 homes nationwide. Information collected during survey includes a detailed questionnaire on house characteristics, as well as radon measurements. The radon survey data for Volume 6 is contained on two diskettes. The data diskettes are accompanied by comprehensive documentation on the design and implementation of the survey, the development and use of sampling weights, a summary of survey results, and information concerning the household questionnaire.

Not Available

1992-01-01T23:59:59.000Z

195

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

196

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

197

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

198

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

199

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

200

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

202

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

203

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

204

E v e n t s & T o p i c s i n R e n e wa b l e E n...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

205

arXiv:1402.0212v1[astro-ph.GA]2Feb2014 Simulations of galactic dynamos  

E-Print Network [OSTI]

-10691 Stockholm, Sweden, e-mail: brandenb@nordita.org, Revision: 1.51 1 #12;2 Axel Brandenburg magnetic et al., 2013a,b) that are believed to sustain the canonical values of a root-mean-square turbulent velocity of urms = 10km/s at den- sity = 2×10-24 gcm-3. The required vertically integrated energy input

Brandenburg, Axel

206

arXiv:1012.4570v1[astro-ph.GA]21Dec2010 Herschel WISH program  

E-Print Network [OSTI]

. Olberg11 , L. Pagani25 , O. Pani´c36 , B. Parise16 , J.C. Pearson37 , R. Plume38 , C. Risacher13 , D

207

SEATTLE, WA ctober 1974  

E-Print Network [OSTI]

nektol n t"c C08 ul \\.\\ t,,.. !" \\ tIn4 UVt'r I I d (l E riltal Inl \\\\ashmptcn, sprl .. lnti ill )f If

208

NITED STATES SEATTLE, WA  

E-Print Network [OSTI]

','), "''\\1FS al 0 as- sists the fishing industry through marke>ting service and ('('onomic anaJysi!i programs transmission frequpncy modulated sonar. Edited by Frank J. Hester. June 1970, iii + 26 pp. 1st paper, Sonar target classification experiments with a continuous- transmission ])oppler sonar, by Frank J. Hester, pp

209

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -MiamiYVE r 1Lcla (8.8gJ

210

Thermal History of the Felsite Unit, Geysers Geothermal Field, From Thermal Modeling of 40Ar/39Ar Incremental Heating Data  

SciTech Connect (OSTI)

An Ar-40/Ar-39 and U-Pb study was performed of the Geysers plutonic complex of the Geysers Geothermal Field in California. Sixty-nine ion microprobe spot analyses of zircons from four granite samples from the plutonic complex that underlies the Geysers geothermal field yielded Pb-207/Pb-206 vs. U-238/Pb-206 concordia ages ranging from 1.13 {+-} 0.04 Ma to 1.25 {+-} 0.04 Ma. The U-Pb ages coincide closely with Ar-40/Ar-39 age spectrum plateau and ''terminal'' ages from coexisting K-feldspars and with the eruption ages of overlying volcanic rocks. The data indicate that the granite crystallized at 1.18 Ma and had cooled below 350 C by {approximately}0.9-1.0 Ma. Interpretation of the feldspar Ar-40/Ar-39 age data using multi-diffusion domain theory indicates that post-emplacement rapid cooling was succeeded either by slower cooling from 350-300 C between 1.0 and 0.4 Ma or transitory reheating to 300-350 C at about 0.4-0.6 Ma. Heat flow calculations constrained with K-feldspar thermal histories and the pre sent elevated regional heal flow anomaly demonstrate that appreciable heat input from sources external to the known Geysers plutonic complex is required to maintain the geothermal system. This requirement is satisfied by either a large, underlying, convecting magma chamber (now solidified) emplaced at 1.2 Ma or episodic intrusion of smaller bodies from 1.2-0.6 Ma.

T. M. Harrison (U of California); G. B. Dalrymple (Oregon State U); J. B. Hulen (U of Utah); M. A. Lanphere; M. Grove; O. M. Lovera

1999-08-19T23:59:59.000Z

211

Smartphone-Mediated Tourist Experiences: Understanding the Influence of Augmented Reality (AR) Applications in Tourism  

E-Print Network [OSTI]

The synergy of smartphone, mobile applications (apps) and Augmented Reality (AR) technology has the potential to mediate tourism experiences to great extents. The advent of AR apps on smartphones provides a dynamic solution for tourists by helping...

Anuar, Faiz Izwan

2013-04-25T23:59:59.000Z

212

E-Print Network 3.0 - ar dadm elektronu Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

PRECATACLYSMIC VARIABLE BINARY1,2 Summary: calibration was established with HeAr arc-lamp spectra, in- terpolated between exposures taken before... to reduce the data. ThAr...

213

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

214

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

215

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

216

SPECIA L SECTION D EP AR TM ENTS  

E-Print Network [OSTI]

#12;#12;SPECIA L SECTION D EP AR TM ENTS 20 Report on Research 22 Spotlight on Students 34 Focus of Phi Ep's national organization. Two lettersin particular stood outbecause they reported that the brothers of Phi Ep weren't the onlyfraternities at UConn to take a similarstand. N.C.Heilman '44 (ENG

Holsinger, Kent

217

Ja argang 14 naJa ar / 2007  

E-Print Network [OSTI]

Ja argang 14 naJa ar / 2007 ixMATR In gesprek met marIa van der Hoeven posItIef oordeel over IndustrIal desIgn alumnIdag over duurzame energIe Magnetisme op atomaire schaal k w a r t a a l b l a d v

Franssen, Michael

218

DESY 07176 arXiv:0710.2602v1  

E-Print Network [OSTI]

########### DESY 07­176 arXiv:0710.2602v1 [hep­ex] 13 Oct 2007 Prospects to Measure the Higgs Boson - Germany The process e + e ! ZH allows to measure the Higgs boson in the recoil mass spectrum against the Z boson without any assumptions on the Higgs boson decay. We performed a full simulation

219

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

220

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

222

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

223

The arXiv: 14 years of open access scientific communication Simeon Warner  

E-Print Network [OSTI]

/09/14 20:22:09 Abstract The arXiv was started in 1991 as a way for high-energy physicists to share publishing. Lessons learned from this development include the importance of community and critical mass how journal publishers have reacted to the arXiv, and ask what the arXiv reveals about the established

Warner, Simeon

224

Le magn)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard  

E-Print Network [OSTI]

Le magné)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard Année 2013-14 Chaire Atomes et rayonnement Magné8sme ar8ficiel pour un atome isolé poten8el vecteur et la simula8on du magné8sme orbital A(r) V

Dalibard, Jean

225

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

226

Evaluation of sintering effects on SiC incorporated UO2 kernels under Ar and Ar-4%H2 environments  

SciTech Connect (OSTI)

Silicon carbide (SiC) is suggested as an oxygen getter in UO2 kernels used for TRISO particle fuels to lower oxygen potential and prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that internal gelation process can be used to incorporate SiC in urania fuel kernels. Sintering in either Ar or Ar-4%H2 at 1500 C lowered the SiC content in the UO2 kernels to some extent. Formation of UC was observed as the major chemical phase in the process, while other minor phases such as U3Si2C2, USi2, U3Si2, and UC2 were also identified. UC formation was presumed to be occurred by two reactions. The first was the SiC reaction with its protective SiO2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO2 to form UC. The second process was direct UO2 reaction with SiC grains to form SiO, CO, and UC, especially in Ar-4%H2. A slightly higher density and UC content was observed in the sample sintered in Ar-4%H2, but the use of both atmospheres produced kernels with ~95% of theoretical density. It is suggested that incorporating CO in the sintering gas would prevent UC formation and preserve the initial SiC content.

Silva, Chinthaka M [ORNL] [ORNL; Lindemer, Terrence [Harbach Engineering and Solutions] [Harbach Engineering and Solutions; Hunt, Rodney Dale [ORNL] [ORNL; Collins, Jack Lee [ORNL] [ORNL; Terrani, Kurt A [ORNL] [ORNL; Snead, Lance Lewis [ORNL] [ORNL

2013-01-01T23:59:59.000Z

227

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

228

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

229

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

230

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

231

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

232

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

233

Theoretical study of the interaction of Fe, Fe/sup +/, and FeCO with Ar  

SciTech Connect (OSTI)

Ab initio Hartree--Fock calculations were performed on FeAr and FeAr/sup +/ in order to determine the interaction of both neutral and singly-ionized Fe atoms trapped in Ar, and on ArFeCO and FeCOAr in order to ascertain the effect of an Ar matrix on the FeCO molecule. Quadrupole splittings and isomer shifts are computed using ab initio orbital populations and charge densities scaled by a relativistic factor. Good agreement between calculated and experimental hyperfine parameters is found in each case. The interaction energy for Fe/sup +/--Ar has been computed by ab initio Hartree--Fock and effective-core potential (ECP) methods. Both approaches yield a minimum between Fe/sup +/ and Ar at approximately 7.6 bohr.

Braga, M.; Almeida, A.L.; Taft, C.A.; Hammond, B.L.; Lester W.A. Jr.

1988-10-15T23:59:59.000Z

234

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

235

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

236

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

237

Triple photoionization of Ne and Ar near threshold  

SciTech Connect (OSTI)

The triple-photoionization cross section of neon and argon near threshold has been investigated by ion time-of-flight spectrometry. We applied the Wannier power law to our data and confirmed the theoretical Wannier exponent in the cases of Ne and Ar. Our data also agree with previous findings regarding the Wannier exponent and its range of validity for Ne. However, the Wannier power law exhibits a much smaller range of validity of 2 eV for Ar compared to 5 eV for Ne. Also, in contrast to a previous experiment, we do not find a 'second' power law but a gradual decrease of the exponent above the range of validity of the Wannier power law.

Bluett, J.B.; Wehlitz, R. [Synchrotron Radiation Center, UW-Madison, Stoughton, Wisconsin 53589 (United States); Lukic, D. [Institute of Physics, 11001 Belgrade (Serbia and Montenegro)

2004-04-01T23:59:59.000Z

238

Nome Instituio Pas E-mail Natalia Gabriela Fracassi Instituto Nacional de Tecnologia Agropecuaria Argentina natfracassi@yahoo.com.ar  

E-Print Network [OSTI]

Agropecuaria Argentina natfracassi@yahoo.com.ar Andre Alexander Held Commonwealth Scientific and Industrial

239

Department of Political Science Box 353530 University of Washington Seattle, WA 98195-3530 phone: (206) 543-2780 fax: (206) 685-2146 www.polisci.washington.edu  

E-Print Network [OSTI]

Department of Political Science · Box 353530 · University of Washington · Seattle, WA 98195-3530 phone: (206) 543-2780 · fax: (206) 685-2146 · www.polisci.washington.edu Highlights Political science rating in the Princeton Review 2010 list of "great schools to study political science." The department

Anderson, Richard

240

1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA  

E-Print Network [OSTI]

1/28/09 3:40 PMBloomberg Printer-Friendly Page Page 1 of 2http://www.bloomberg.com/apps/news?pidhttp://www.bloomberg.com/apps/news?pid=20670001&refer=science&sid=atoTqDydLoWA list of genes that may

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241

Felix Bildhauer & Roland Schfer (eds.), Proceedings of the 9th Web as Corpus Workshop (WaC-9) @ EACL 2014, pages 2935, Gothenburg, Sweden, April 26 2014. c 2014 Association for Computational Linguistics  

E-Print Network [OSTI]

Linguistics {bs,hr,sr}WaC ­ Web corpora of Bosnian, Croatian and Serbian Nikola Ljubesi´c University of Zagreb of top-level-domain web corpora of Bosnian, Croatian and Serbian. For constructing the corpora we use the process of building web corpora of Bosnian, Croatian and Serbian by crawling the .ba, .hr and .rs TLDs

242

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

243

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

244

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

245

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

246

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

247

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

248

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

249

The production of /sup 38/Ar and /sup 39/Ar by 14-MeV neutrons on /sup 39/K  

SciTech Connect (OSTI)

The authors have determined the cross sections for the production of /sup 38/Ar and /sup 39/Ar from the (n,n'rho) and (n,rho) reactions by neutrons of -- 14 MeV incident on /sup 39/K. Three potassium-bearing specimens were irradiated with fluences of --10/sup 17/ neutrons, and the argon isotopes were measured by mass spectrometry. Previously reported measurements are in substantial disagreement with our results. Values from the three new measurements are consistent with each other and our computational modeling. Nevertheless, there remains an unexplained increase in the cross sections for both reactions as the neutron energy increases from --14.5 to 14.8 MeV.

Foland, K.A.; Borg, R.J.; Mustafa, M.G.

1987-02-01T23:59:59.000Z

250

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

251

sup 40 Ar/ sup 39 Ar age calibration of the litho- and paleomagnetic stratigraphies of the Ngorora Formation, Kenya  

SciTech Connect (OSTI)

Precise eruptive ages have been determined by the laser-fusion, single-crystal {sup 40}Ar/{sup 39}Ar method for juvenile volcanic feldspars from reworked and contaminated volcaniclastic rocks of the middle Miocene Ngorora Formation, Kenya Rift Valley. These ages range from 13.06 Ma at the base to 10.51 Ma toward the top of the type section near Kabarsero. Correlation of the local paleomagnetic stratigraphies with the geomagnetic reversal time scale yields magnetochronologic age estimates that are younger than the isotopic ages by an average of 0.18 Ma. Much of the discrepancy can be eliminated if an inferred change in sea-floor spreading rate occurred at 13 Ma or earlier, rather than at 10.42 Ma as previously suggested. Sedimentation rates at Kabarsero calculated from the {sup 40}Ar/{sup 39}Ar results decrease from initial values of {approximately}25 cm/1,000 yr to {approximately}5 cm/1,000 yr toward the top of the section. The initial rapid sedimentation rates characterize the first 0.1 to 0.3 m.y. following emplacement of the underlying, voluminous, basin-filling Tiim Phonolites, indicating that the Baringo Basin at this time may not have existed as a rift valley created by extensional tectonics, but instead may have been a subsidence feature formed in response to removal of large volumes of magma from the lithosphere. A premolar tentatively identified as Proconsul sp. indet. found in the Ngorora Formation near the village of Bartabwa has been dated at {approximately}12.42 Ma, representing perhaps the last known occurrence of this genus in the fossil record.

Deino, A.; Drake, R. (Institute of Human Origins, Berkeley, CA (USA)); Tauxe, L. (Scripps Institute of Oceanography, La Jolla, CA (USA)); Monaghan, M. (Univ. of Chicago, IL (USA))

1990-07-01T23:59:59.000Z

252

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

253

Role of Penning ionization in the enhancement of streamer channel conductivity and Ar(1s{sub 5}) production in a He-Ar plasma jet  

SciTech Connect (OSTI)

Plasma jet devices that use a helium gas flow mixed with a small percentage of argon have been shown to operate with a larger discharge current and enhanced production of the Ar(1s{sub 5}) metastable state, particularly in the discharge afterglow. In this experiment, time-resolved quantitative measurements of He(2{sup 3}S{sub 1}) and Ar(1s{sub 5}) metastable species were combined with current and spectrally resolved emission measurements to elucidate the role of Penning ionization in a helium plasma jet with a variable argon admixture. The plasma jet was enclosed in a glass chamber through which a flowing nitrogen background was maintained at 600 Torr. At 3%-5% Ar admixture, we observed a {approx}50% increase in the peak circuit current and streamer velocity relative to a pure helium plasma jet for the same applied voltage. The streamer initiation delay also decreased by {approx}20%. Penning ionization of ground-state argon was found to be the dominant quenching pathway for He(2{sup 3}S{sub 1}) up to 2% Ar and was directly correlated with a sharp increase in both the circuit current and afterglow production of Ar(1s{sub 5}) for Ar admixtures up to 1%, but not necessarily with the streamer velocity, which increased more gradually with Ar concentration. Ar(1s{sub 5}) was produced in the afterglow through recombination of Ar{sup +} and dissociative recombination of Ar{sub 2}{sup +} as the local mean electron energy decreased in the plasma channel behind the streamer head. The discharge current and argon metastable enhancement are contingent on the rapid production of He(2{sup 3}S{sub 1}) near the streamer head, >5 Multiplication-Sign 10{sup 12} cm{sup -3} in 30 ns under the conditions of this experiment.

Sands, Brian L. [UES, Inc., 4401 Dayton-Xenia Rd., Dayton, Ohio 45432 (United States); Huang, Shih K.; Speltz, Jared W.; Niekamp, Matthew A. [Department of Mechanical and Materials Engineering, Wright State University, 3640 Colonel Glenn Hwy., Dayton, Ohio 45435 (United States); Ganguly, Biswa N. [Air Force Research Laboratory, 1950 5th St. Wright Patterson Air Force Base, Ohio 45433 (United States)

2013-04-21T23:59:59.000Z

254

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

255

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

256

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

257

E-Print Network 3.0 - ar para uma Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(Figura 6.d). Uma vez escolhido o ar- quivo, uma transio de... fato a existn- cia de ... Source: Barbosa, Alberto - Departamento de Informtica, Pontifcia...

258

SPPI ORIGINAL PAPER October 11, 2011 GROSS ERRORS IN THE IPCC-AR4  

E-Print Network [OSTI]

SPPI ORIGINAL PAPER October 11, 2011 GROSS ERRORS IN THE IPCC-AR4 REPORT REGARDING PAST & FUTURE FIGURE AND GEORGE WILL QUOTE.....................

Gray, William

259

E-Print Network 3.0 - androgen receptor ar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Baldness and the androgen receptor: the AR polyglycine repeat polymorphism does... ., Marschke, C., Hiort, O., 2006. The A645D mutation in the ... Source: Ecole Polytechnique,...

260

Oxygen-driven relaxation processes in pre-irradiated Ar cryocrystals  

E-Print Network [OSTI]

Excitations of Solid Oxygen ?in Russian?, B. I. Verkin andNUMBER 11 NOVEMBER 2006 Oxygen-driven relaxation processes? Relaxation processes in oxygen-containing Ar cryocrystals

Savchenko, E. V; Belov, A. G; Gumenchuk, G. B; Ponomaryov, A. N; Bondybey, V. E

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

E-Print Network 3.0 - ar-bicat diimine platinum Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: ar-bicat diimine platinum Page: << < 1 2 3 4 5 > >> 1 Chemistry Department 2011 Summer Research Program Summary: are investigating the interaction...

262

E-Print Network 3.0 - advanced ring pf-ar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: advanced ring pf-ar Page: << < 1 2 3 4 5 > >> 1 Advanced Computer Systems Architecture Summary: Advanced Computer Systems Architecture Highly Integrated...

263

Dusty Plasma in He-Ar Glow Discharge  

SciTech Connect (OSTI)

The paper reports on the first experiments with plasma-dust formations in dc gas discharge plasma for He-Ar mixture. It is shown that under the conventional conditions of the experiments with dusty structures in plasma, the choice of light and heavy gases for the mixture suppresses electron heating in electric field and results in a supersonic jet with high Mach numbers. Distribution functions for drifting ions in the gas mixture are calculated for various mixture concentrations, electric field strengths and gas pressures.

Maiorov, S. A. [A. M. Prokhorov Institute for General Physics under Russian Academy of Sciences, Moscow (Russian Federation); Ramazanov, T. S.; Dzhumagulova, K. N.; Dosbolayev, M. K.; Jumabekov, A. N. [IETP, al-Farabi Kazakh National University, 96a, Tole bi St., Almaty, 050012 (Kazakhstan)

2008-09-07T23:59:59.000Z

264

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

265

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

266

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

267

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

268

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

269

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

270

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

271

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

272

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

273

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

274

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

275

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

276

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

277

Very-high-order harmonic generation from Ar atoms and Ar+ ions in superintense pulsed laser fields: An ab initio self-interaction-free time-dependent density-functional approach  

E-Print Network [OSTI]

We present an ab initio nonpertubative investigation of the mechanisms responsible for the production of very-high-order harmonic generation (HHG) from Ar atoms and Ar+ ions by means of the self-interaction-free time-dependent density...

Carrera, Juan J.; Chu, Shih-I; Tong, X. M.

2005-06-21T23:59:59.000Z

278

arXiv:0904.0927v1[math.AG]6Apr2009 CALCULATING THE PARABOLIC CHERN CHARACTER OF A  

E-Print Network [OSTI]

characters chP ar 1 (E), chP ar 2 (E) and chP ar 3 (E). The basic idea is to use the formula given in [IS2

Simpson, Carlos

279

Asymptotic Inference for AR Models with Heavy-tailed G-GARCH Noises  

E-Print Network [OSTI]

Asymptotic Inference for AR Models with Heavy-tailed G-GARCH Noises Rongmao Zhang Department-tailed G-GARCH(1,1) noises. When the tail index of G-GARCH is within (0, 2), it is shown that the LSE and finance. Keywords: AR model, G-GARCH, heavy-tailed and stable processes 1 #12;1 Introduction Since

Ling, Shiqing

280

The Caribbean Low-Level Jet and Its Relationship with Precipitation in IPCC AR4 Models  

E-Print Network [OSTI]

The Caribbean Low-Level Jet and Its Relationship with Precipitation in IPCC AR4 Models ELINOR R Report (AR4) shows that all models have the ability to simulate the location and height of the Caribbean Caribbean and, hence, an overly strong CLLJ. The ability of the models to simulate the correlation between

Martin, Elinor R.

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Le magn)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard  

E-Print Network [OSTI]

Le magné)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard Année 2013-14 Chaire Atomes et rayonnement Magné8sme ar8ficiel pour un atome isolé (I) #12;Simula8on du magné8sme avec des atomes neutres Le but : réaliser pour

Dalibard, Jean

282

Active species downstream of an ArO surface-wave microwave discharge for biomedicine,  

E-Print Network [OSTI]

Active species downstream of an Ar­O 2 surface-wave microwave discharge for biomedicine, surface.1088/0963-0252/20/3/035006 Active species downstream of an Ar­O2 surface-wave microwave discharge for biomedicine, surface treatment in a 0.5 cm diameter tube at pressures between 1 and 12 mbar. The early afterglow that occurs downstream

Guerra, Vasco

283

E-Print Network 3.0 - ar isotopic ratios Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Ecology 71 arXiv:1001.0944v2physics.atom-ph7May2010 Single-Photon Atomic Sorting: Isotope Separation with Maxwell's Demon Summary: arXiv:1001.0944v2physics.atom-ph7May201...

284

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

285

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

286

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

287

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

288

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

289

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

290

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

291

Dual Feedback Controlled High Performance Ar Seeded ELMy H-mode Discharges in JET including Trace Tritium Experiments  

E-Print Network [OSTI]

Dual Feedback Controlled High Performance Ar Seeded ELMy H-mode Discharges in JET including Trace Tritium Experiments

292

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

293

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

294

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

295

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

296

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

297

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

298

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

299

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

300

GAS AND DUST ABSORPTION IN THE DoAr 24E SYSTEM  

SciTech Connect (OSTI)

We present findings for DoAr 24E, a binary system that includes a classical infrared companion. We observed the DoAr 24E system with the Spitzer Infrared Spectrograph (IRS), with high-resolution, near-infrared spectroscopy of CO vibrational transitions, and with mid-infrared imaging. The source of high extinction toward infrared companions has been an item of continuing interest. Here we investigate the disk structure of DoAr 24E using the column densities, temperature, and velocity profiles of two CO absorption features seen toward DoAr 24Eb. We model the spectral energy distributions found using T-ReCS imaging and investigate the likely sources of extinction toward DoAr 24Eb. We find the lack of silicate absorption and small CO column density toward DoAr 24Eb suggest that the mid-infrared continuum is not as extinguished as the near-infrared, possibly due to the mid-infrared originating from an extended region. This, along with the velocity profile of the CO absorption, suggests that the source of high extinction is likely due to a disk or disk wind associated with DoAr 24Eb.

Kruger, Andrew J. [Department of Physical Science, Wilbur Wright College, 4300 North Narragansett Avenue, Chicago, IL 60634 (United States); Richter, Matthew J. [Department of Physics, University of California at Davis, One Shields Avenue, Davis, CA 95616 (United States); Seifahrt, Andreas [Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Carr, John S. [Remote Sensing Division, Naval Research Laboratory, Code 7210, Washington, DC 20375 (United States); Najita, Joan R. [National Optical Astronomy Observatory, Tucson, AZ 85719 (United States); Moerchen, Margaret M. [European Southern Observatory, Alonso de Cordova 3107, Santiago (Chile); Doppmann, Greg W. [W.M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States)

2012-11-20T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

302

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

303

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

304

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

305

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

306

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

307

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

308

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

309

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

310

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

311

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

312

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

313

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

314

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

315

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

316

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

317

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

318

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

319

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

320

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

E-Print Network 3.0 - adaptive response ar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of adaptation could approximate the ARs of P-cells on a single-trial basis in response to a richer stimulus... and color-sensitive pathway) showed response adaptation with...

322

An Application of Augmented Reality (AR) in the Teaching of an Arc Welding Robot  

E-Print Network [OSTI]

Augmented Reality (AR) is an emerging technology that utilizes computer vision methods to overlay virtual objects onto the real world scene so as to make them appear to co-exist with the real objects. Its main objective ...

Chong, J. W. S.

323

arXiv:hep-ph/0301023v321Feb2003 SCIPP 02/37  

E-Print Network [OSTI]

arXiv:hep-ph/0301023v321Feb2003 UCD-02-18 SCIPP 02/37 IUHEX-202 December, 2002 hep-ph/0301023 Higgs-energy supersymmetry . . . . . . . . . . . . . . . . 22 5.1 MSSM Higgs sector at tree level

California at Santa Cruz, University of

324

Apprentice Researchers The Apprentice Researchers (AR) program was awarded supplemental funding by NSF's EHR  

E-Print Network [OSTI]

Apprentice Researchers The Apprentice Researchers (AR) program was awarded supplemental funding apprentices acquire scientific knowledge and lab skills while experiencing what real research in hopes to their peers, family, and mentors. Totals -Summers 1991 to 2008 Total #Apprentices % Apprentices All

Bigelow, Stephen

325

The Navigation and Control technology inside the AR.Drone micro UAV  

E-Print Network [OSTI]

) for the mass market of videos games and home entertainment. The project was publicly presented at the 2010 reality (AR), video games, and interactivity. As is discussed in this article, this landmarking project

326

E-Print Network 3.0 - ar gas mixture Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Powered by Explorit Topic List Advanced Search Sample search results for: ar gas mixture Page: << < 1 2 3 4 5 > >> 1 A redetermination of the isotopic abundances of...

327

E-Print Network 3.0 - angular correlations 31ar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: angular correlations 31ar Page: << < 1 2 3 4 5 > >> 1 Low Energy Nuclear and Solid State Physics 1a). BetaGamma Angular Correlations in Au 193 and...

328

E-Print Network 3.0 - ar-rich source gas Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

gas mixture containing 1%CH4... - and Ar-rich plasmas and, as such, a broader range of process parameters investigated. The reported values... , irrespective of the choice of...

329

E-Print Network 3.0 - ar em tomografia Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tomografia Search Powered by Explorit Topic List Advanced Search Sample search results for: ar em tomografia Page: << < 1 2 3 4 5 > >> 1 0.5setgray00.5setgray1 Determinao de...

330

Rovibrational spectroscopy of ArCO van der Waals complex  

SciTech Connect (OSTI)

The information that can be obtained from the high resolution rovibrational spectra of small molecular clusters is very useful for determining intermolecular potentials and the effects of intermolecular interactions on intramolecular bonds. Recently, such spectra have been obtained via absorption measurements using F-center, frequency difference and diode laser sources. Because F-center and frequency difference lasers operate best in the 2-4 ..mu..m region, studies using these laser sources have involved high frequency vibrational modes (H-X, X-C,F,Cl,Br) or overtones. Although diode lasers cover a much broader spectral range (3-20 ..mu..m), they are less convenient to use for doing survey spectroscopy. We have developed several new techniques which improve the sensitivity and convenience of absorption measurements using diode lasers for the study of molecular clusters in supersonic expansions. Here we describe these techniques and their application for the measurement of the rovibrational spectra of ArCO near 5 ..mu..m. 11 refs., 4 figs., 1 tab.

Campbell, E.J.; De Piante Johnston, A.; Buelow, S.J.

1987-01-01T23:59:59.000Z

331

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

332

Le magn)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard  

E-Print Network [OSTI]

Le magné)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard Année 2013-14 Chaire Atomes et rayonnement Magné8sme ar8ficiel et interac8ons : condensats en rota8on #12;Magné8sme dans une assemblée de par8cule en interac8on

Dalibard, Jean

333

The science case for 37Ar as a monitor for underground nuclear explosions  

SciTech Connect (OSTI)

A new calculation of the production of 37Ar from nuclear explosion neutron interactions on 40Ca in a suite of common sub-surface materials (rock, etc) is presented. Even in mineral structures that are relatively low in Ca, the resulting 37Ar signature is large enough for detection in cases of venting or gaseous diffusion driven by barometric pumping. Field and laboratory detection strategies and projected sensitivities are presented.

Haas, Derek A.; Orrell, John L.; Bowyer, Ted W.; McIntyre, Justin I.; Miley, Harry S.; Aalseth, Craig E.; Hayes, James C.

2010-06-04T23:59:59.000Z

334

Ion chemistry in H{sub 2}-Ar low temperature plasmas  

SciTech Connect (OSTI)

A rate equation model is devised to study the ion composition of inductively coupled H{sub 2}-Ar plasmas with different H{sub 2}-Ar mixing ratios. The model is applied to calculate the ion densities n{sub i}, the wall loss probability of atomic hydrogen ?{sub H}, and the electron temperature T{sub e}. The calculated n{sub i}'s of Ar{sup +}, H{sup +}, H{sub 2}{sup +}, H{sub 3}{sup +}, and ArH{sup +} are compared with experimental results. Calculations were made for a total gas pressure of 1.0 Pa. The production and loss channels of all ions are presented and discussed in detail. With the production and loss rates, the density dependence of each ion on the plasma parameters is explained. It is shown that the primary ions H{sub 2}{sup +} and Ar{sup +} which are produced by ionization of the background gas by electron collisions are effectively converted into H{sub 3}{sup +} and ArH{sup +}. The high density of ArH{sup +} and Ar{sup +} is attributed to the low loss to the walls compared to hydrogen ions. It is shown that the H{sup +}/H{sub 2}{sup +} density ratio is strongly correlated to the H/H{sub 2} density ratio. The dissociation degree is around 1.7%. From matching the calculated to the measured atomic hydrogen density n{sub H}, the wall loss probability of atomic hydrogen on stainless steel ?{sub H} was determined to be ?{sub H}=0.24. The model results were compared with recently published experimental results. The calculated and experimentally obtained data are in fair agreement.

Sode, M.; Schwarz-Selinger, T.; Jacob, W. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Boltzmannstraße 2, D-85748 Garching (Germany)] [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Boltzmannstraße 2, D-85748 Garching (Germany)

2013-08-14T23:59:59.000Z

335

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

336

Data Packages in Hanford Site's Administrative Record (AR) and Public Information Repository (PIR)  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

In 1989, the Department of Energy joined with the Washington State Department of Ecology and the U.S. Environmental Protection Agency in signing the Hanford Federal Facility Agreement and Consent Order more commonly known as the Tri-Party Agreement (TPA). The TPA outlines legally enforceable milestones for Hanford cleanup over the next several decades. The AR is the body of documents and information that is considered or relied upon to arrive at a final decision for remedial action or hazardous waste management. An AR is established for each operable unit (OU); treatment, storage, or disposal unit (TSD); or Expedited Response Action (ERA) group and will contain all documents having information considered in arriving at a Record of Decision or permit. Documents become part of the AR after they have been designated as an AR by the TPA or after EPA, DOE, or other official parties have identified a document or set of documents for inclusion. Furthermore, AR documents are to be kept in a Public Information Repository (PIR).Thousands of data packages that support the AR documents are available to the public in the Hanford PIR.

337

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

338

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

339

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

340

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

342

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

343

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

344

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

345

Utah_wa_correctional_facility  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II Field EmissionFunctional MaterialsRobert RadtkeWashington

346

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

347

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

348

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

349

Symmetry energy and the isoscaling properties of the fragments in multifragmentation of 40Ca+58Ni, 40Ar+58Ni, and 40Ar+58Fe reactions  

E-Print Network [OSTI]

The symmetry energy and the isoscaling properties of the fragments produced in multifragmentation of 40Ar, 40Ca + 58Fe, 58Ni reactions at 25, 33, 45 and 53 MeV/nucleon were investigated within the framework of a statistical multifragmentation model...

Iglio, Jennifer Ann

2007-09-17T23:59:59.000Z

350

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

351

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

352

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

353

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

354

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

355

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

356

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

357

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

358

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

359

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

360

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

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361

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

362

Traces on ion yields and electron spectra of Ar inner-shell hollow states with Free-Electron Lasers  

E-Print Network [OSTI]

We explore the formation by Free-Electron-Laser radiation of Ar hollow states with two or three inner-shell holes. We find that even charged Ar ion states can be more populated than odd charged Ar ion states. This depends on the pulse intensity and the number of energetically accessible inner- shell holes. Fully accounting for fine structure, we demonstrate that one electron spectra bare the imprints of Ar hollow states with two inner-shell holes. Moreover, we show how the Auger spectra of these hollow states can be extracted from two-electron coincidence spectra.

Wallis, A O G; Emmanouilidou, A

2015-01-01T23:59:59.000Z

363

arXiv:1410.3874v1[astro-ph.GA]14Oct2014 (To appear in the Astrophysical Journal)  

E-Print Network [OSTI]

using LATEX style emulateapj v. 5/2/11 QUANTIFYING THE HEATING SOURCES FOR MID-INFRARED DUST EMISSIONS spiral galaxy M 81 (NGC 3031): (a) I8 or I24, the surface brightness of the mid-infrared emission dust grains heated by evolved stars, and (c) IH, a nominal surface brightness of the H line emission

Baes, Maarten

364

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

365

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

366

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

367

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

368

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

369

Linking Education R&D Institutes and IndustryLinking Education, R&D Institutes and Industry l ifi E b l AR)(examples are more specific to Egypt , but many apply to AR)  

E-Print Network [OSTI]

and Industry l ifi E b l AR)(examples are more specific to Egypt , but many apply to AR) Mohamed A. Abdou goals. The overall assessment indicates that: Egypt's current S&T system has failed to substantially impactEgypt s current S&T system has failed to substantially impact socio-economic development which

Abdou, Mohamed

370

Search for flow in the reaction Ar + Pb. [0. 8 GeV/u  

SciTech Connect (OSTI)

Interactions between Ar projectiles and lead are studied in terms of global observables. The Streamer Chamber at the Berkeley BEVALAC was used to record all charged particles produced in collisions between 0.8 GeV/u Ar projectiles with a Pb/sub 3/O/sub 4/ target. A hardware trigger selected central collisions with Pb nuclei corresponding to a trigger cross section of 1 barn. In a geometrical picture this is equivalent to an impact parameter range of 0 to 5 fm.

Renfordt, R.E.; Brockmann, R.; Harris, J.W.; Maier, M.; Riess, F.; Sandoval, A.; Stock, R.; Stroebele, H.; Wolf, K.L.; Pugh, H.G.

1983-08-01T23:59:59.000Z

371

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

372

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

373

Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}  

SciTech Connect (OSTI)

Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies. Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

Schmidt, S.; Greczynski, G.; Jensen, J.; Hultman, L. [Thin Film Physics Div., Department of Physics (IFM), Linkoeping University, SE-581 83 (Sweden); Czigany, Zs. [Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege Miklos ut 29-33. H-1121 Budapest (Hungary)

2012-07-01T23:59:59.000Z

374

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

375

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

376

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

377

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar  

E-Print Network [OSTI]

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar¿ Sputter Etched and UPS were used to study epitaxial TiN 001 layers grown in situ which were Ar sputter etched. The films Host Material: epitaxial TiN(001) thin film sputter etched Instrument: Physical Electronics, Inc. 5400

Gall, Daniel

378

Excitation functions for the reactions of Ar^+ with CH4, CD4, and CH2D2  

E-Print Network [OSTI]

Integral reaction cross sections as a function of initial translational energy (0.4–30 eV c.m.) are reported for isotopic variants of the exoergic ion?molecule reaction Ar++CH4 ? ArH++CH3. The excitation functions, which maximize at about 5 e...

Wyatt, J. R.; Strattan, L. W.; Chivalak, S.; Hierl, Peter M.

1975-01-01T23:59:59.000Z

379

Polymorphisms of the acid sensing histidine kinase gene arsS in Helicobacter pylori populations from anatomically distinct gastric sites  

E-Print Network [OSTI]

Polymorphisms of the acid sensing histidine kinase gene arsS in Helicobacter pylori populations 2012 Available online 30 August 2012 Keywords: Helicobacter pylori arsS Polymorphism Homopolymeric as environmental or host conditions change. Unusual among Helicobacter pylori phase variable or contingency genes

Forsyth, Mark

380

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

382

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

383

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

384

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

385

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

386

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

387

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

388

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

389

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

390

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

391

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

392

Reply to the revised Comment [PRL 102, 139601; arXiv:0810.4791] on ''Dynamic Scaling of Non-Euclidean Interfaces''  

E-Print Network [OSTI]

This is the Reply to the revised Comment [Phys. Rev. Lett. 102, 139601; arXiv:0810.4791] by Joachim Krug on our paper: C. Escudero, Phys. Rev. Lett. 100, 116101 (2008); arXiv:0804.1898.

Carlos Escudero

2009-06-05T23:59:59.000Z

393

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

394

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

395

http://arXiv.org/physics/0507088 Teaching About Nature's Nuclear Reactors  

E-Print Network [OSTI]

http://arXiv.org/physics/0507088 Teaching About Nature's Nuclear Reactors J. Marvin Herndon reactors existed in uranium deposits on Earth long before Enrico Fermi built the first man-made nuclear reactors. The subject of planetocentric nuclear fission reactors can be a jumping off point for stimulating

Learned, John

396

arXiv:math.QA/0212313v122Dec2002 MACDONALD POLYNOMIALS AND ALGEBRAIC  

E-Print Network [OSTI]

arXiv:math.QA/0212313v122Dec2002 MACDONALD POLYNOMIALS AND ALGEBRAIC INTEGRABILITY OLEG CHALYKH1 Abstract. We construct explicitly (non-polynomial) eigenfunctions of the difference operators by Macdonald in case t = qk, k Z. This leads to a new, more elementary proof of several Macdonald conjectures, first

Haase, Markus

397

Zero electron kinetic energy spectroscopy of the ArCl anion Thomas Lenzer,a)  

E-Print Network [OSTI]

and the neutral complexes are observed in the ZEKE spectra. From our spectroscopic data we construct modelZero electron kinetic energy spectroscopy of the ArCl anion Thomas Lenzer,a) Ivan Yourshaw, Berkeley, California 94720 Received 19 January 1999; accepted 23 February 1999 Zero electron kinetic energy

Neumark, Daniel M.

398

6035 Hg(Ar) Lamp in 6058 Fiber Optic Accessory. Pencil Style Calibration Lamps  

E-Print Network [OSTI]

to that of the Hg(Ar) Lamp, which is the characteristic mercury line spectrum. Forced air-cooling (i.e. from of the handle for connection to the power supply. Table 1 Usable Wavelengths of Spectral Calibration Lamps (in.2 1079.8 1084.5 1114.3 Power Supplies; AC versus DC We offer different power supplies for different needs

Woodall, Jerry M.

399

Spectroscopy, polarization and nonadiabatic dynamics of electronically excited Ba(Ar)n clusters: Theory and experiment  

E-Print Network [OSTI]

Spectroscopy, polarization and nonadiabatic dynamics of electronically excited Ba(Ar)n clusters, France Received 13 September 1995; accepted 17 November 1995 Molecular Dynamics simulations using, a comprehensive picture of the excited state dynamics is given. It is found that upon excitation, energy

Krylov, Anna I.

400

arXiv:astro-ph/0106481v126Jun2001 MASSIVE DATASETS IN ASTRONOMY  

E-Print Network [OSTI]

arXiv:astro-ph/0106481v126Jun2001 Chapter 1 MASSIVE DATASETS IN ASTRONOMY Robert J. Brunner, S 21218 USA szalay@pha.jhu.edu Abstract Astronomy has a long history of acquiring, systematizing archives and services representing a new in- formation infrastructure for astronomy of the 21st century

Prince, Thomas A.

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

CERAMIC BREEDER BLANKET FOR ARIES-CS A.R. Raffray1  

E-Print Network [OSTI]

CERAMIC BREEDER BLANKET FOR ARIES-CS A.R. Raffray1 , S. Malang2 , L. El-Guebaly3 , X. Wang4 describes the conceptual design of a ceramic breeder blanket considered as one of the candidate blankets developed during the early scoping phase is a helium-cooled ceramic breeder (CB) blanket. Consistent

California at San Diego, University of

402

arXiv:physics/000908727Sep2000 MEASURING AND CONTROLLING ENERGY SPREAD IN CEBAF  

E-Print Network [OSTI]

arXiv:physics/000908727Sep2000 MEASURING AND CONTROLLING ENERGY SPREAD IN CEBAF G. A. Krafft, J spread from a CEBAF-type machine to be relatively small; the measured energy spread from CEBAF at 4 Ge, the various subsystems contributing to the energy spread of a CEBAF-type accel- erator are reviewed, as well

403

arXiv:astro-ph/0509571v119Sep2005 Gamma-Ray Burst Early Afterglows  

E-Print Network [OSTI]

arXiv:astro-ph/0509571v119Sep2005 Gamma-Ray Burst Early Afterglows Bing Zhang Department of Physics's Swift Gamma-Ray Burst Explorer open a new era for the multi-wavelength study of the very early afterglow phase of gamma-ray bursts (GRBs). GRB early afterglow information is essential to explore the unknown

Zhang, Bing

404

arXiv:hep-ph/0602242v67Sep2006 SCIPP-06/01  

E-Print Network [OSTI]

arXiv:hep-ph/0602242v67Sep2006 SCIPP-06/01 hep-ph/0602242 February, 2006 Basis-independent methods care [14, 15] to avoid neutral Higgs-mediated flavor-changing neutral currents (FCNCs) at tree level to completely remove the tree-level FCNC effects. Both the discrete symmetries alluded to above

California at Santa Cruz, University of

405

arXiv:hep-ph/9806331v110Jun1998 SCIPP 98/10  

E-Print Network [OSTI]

arXiv:hep-ph/9806331v110Jun1998 SCIPP 98/10 March 1998 hep-ph/9806331 Probing the MSSM Higgs Sector at tree-level in terms of two Higgs sector parameters. This structure arises due to constraints imposed parameters introduced above are real. Supersymmetry imposes the fol- lowing constraints on the tree

California at Santa Cruz, University of

406

arXiv:hep-ph/9810536v212Nov1998 SLAC-PUB-7853  

E-Print Network [OSTI]

arXiv:hep-ph/9810536v212Nov1998 SLAC-PUB-7853 SCIPP-98/31 FERMILAB-PUB-98/345-T hep-ph/9810536 number conservation in the tree-level supersymmetric theory, it is sufficient to impose one extra

California at Santa Cruz, University of

407

arXiv:hep-ph/001029625Oct2000 JLAB-THY-00-37  

E-Print Network [OSTI]

arXiv:hep-ph/001029625Oct2000 JLAB-THY-00-37 RUB-TPII-17/00 hep-ph/0010296 DVCS amplitude at tree for transverse polarization contains a divergence already at tree level. However, this divergence has zero

Thomas Jefferson National Accelerator Facility

408

arXiv:hep-ph/0207010v529Jan2003 UCD-2002-10  

E-Print Network [OSTI]

arXiv:hep-ph/0207010v529Jan2003 UCD-2002-10 SCIPP-02/10 hep-ph/0207010 July 2002 The CP also been addressed recently in ref. [12]. 2 #12;masses and mixing angles vs. Lagrangian tree

California at Santa Cruz, University of

409

arXiv:hep-ph/0212010v11Dec2002 SCIPP 02/27  

E-Print Network [OSTI]

arXiv:hep-ph/0212010v11Dec2002 SCIPP 02/27 November, 2002 hep­ph/0212010 Decoupling generate an accidental cancellation between tree-level and one-loop terms, resulting in a SM-like Higgs tree- level and one-loop terms, resulting in a SM-like Higgs boson for moderate mA outside

California at Santa Cruz, University of

410

arXiv:astro-ph/0703364v227Aug2007 Electromagnetic dark energy  

E-Print Network [OSTI]

arXiv:astro-ph/0703364v227Aug2007 Electromagnetic dark energy Christian Beck School of MathematicalGill University, Montreal, Quebec, Canada (Dated: August 28, 2007) We introduce a new model for dark energy equations, or more generally with the existence of dark energy. The dark energy density consistent

Wright, Francis

411

arXiv:astro-ph/0512327v27Mar2006 Laboratory tests on dark energy  

E-Print Network [OSTI]

arXiv:astro-ph/0512327v27Mar2006 Laboratory tests on dark energy Christian Beck School of the currently observed dark energy in the universe is completely unclear, and many different theoretical models co-exist. Nevertheless, if dark energy is produced by vac- uum fluctuations then there is a chance

Beck, Christian

412

Safety Slides Rota/ng Sha3s AR-G2 Coue;e Fixture  

E-Print Network [OSTI]

Safety Slides ­ Rota/ng Sha3s 1 AR-G2 Coue;e Fixture · loose-fi@ng shirts max = 250 to 300 rad/s #12;Safety Slides ­ Rota/ng Sha3s 2 Pinch Points in Rota

Cohen, Robert E.

413

arXiv:hepex/0505096 Measurement of the Higgs Boson Mass  

E-Print Network [OSTI]

################ arXiv:hep­ex/0505096 v1 30 May 2005 Measurement of the Higgs Boson Mass for the measurement of the Higgs boson mass. An integrated luminosity of 500 fb 1 is assumed. For Higgs boson masses of 120, 150 and 180 GeV the uncertainty on the Higgs boson mass measurement is estimated to be 40, 65

414

Condensation energy in the spin-fermion model for cuprates Ar. Abanov and Andrey V. Chubukov  

E-Print Network [OSTI]

Condensation energy in the spin-fermion model for cuprates Ar. Abanov and Andrey V. Chubukov the condensation energy in the spin-fermion model using Scalapino-White relation between the condensation energy in the dynamical structure factor in a superconductor is not compensated up to energies J which are much larger

Chubukov, Andrey V.

415

arXiv:math-ph/0305049v123May2003 Transport and Dissipation in Quantum Pumps  

E-Print Network [OSTI]

arXiv:math-ph/0305049v123May2003 Transport and Dissipation in Quantum Pumps J. E. Avron , A in quantum pumps. The notion of "energy shift", a self-adjoint operator dual to the Wigner time delay, plays in quantum pumps. We discuss the geometric and topological content of adiabatic transport and show

416

arXiv:mathph/0305049 Transport and Dissipation in Quantum Pumps  

E-Print Network [OSTI]

arXiv:math­ph/0305049 v1 23 May 2003 Transport and Dissipation in Quantum Pumps J. E. Avron #3; , A in quantum pumps. The notion of \\energy shift", a self-adjoint operator dual to the Wigner time delay, plays in quantum pumps. We discuss the geometric and topological content of adiabatic transport and show

417

arXiv:condmat/0002194 Geometry, Statistics and Asymptotics of Quantum Pumps  

E-Print Network [OSTI]

arXiv:cond­mat/0002194 v2 31 May 2000 Geometry, Statistics and Asymptotics of Quantum Pumps J. E¨uttiker et. al. (BPT) relating the adiabatically pumped current to the S matrix and its (time) derivatives. We relate the charge in BPT to Berry's phase and the corresponding Brouwer pumping formula

418

arXiv:cond-mat/9707333v131Jul1997 Fingering Instability in Combustion  

E-Print Network [OSTI]

arXiv:cond-mat/9707333v131Jul1997 Fingering Instability in Combustion O. Zik(1) , Z. Olami(2) and E quantitatively verify a model based on diffusion limited transport. Harnessing combustion is a basic element conflagrations is often determined by fundamental issues regarding the stability of combustion fronts. Although

Moses, Elisha

419

arXiv:physics/0603142v117Mar2006 Brownian Motion after Einstein  

E-Print Network [OSTI]

arXiv:physics/0603142v117Mar2006 Brownian Motion after Einstein: Some new applications and new-4000 Roskilde, Denmark 2 Department of Biological Physics, E¨otv¨os Lor´and University (ELTE), H-1117 Budapest, Hungary 3 Max Planck Institute for the Physics of Complex Systems, N¨othnitzer Strasse 38, D

420

arXiv:astro-ph/0009259v219Sep2000 How the Sun Shines  

E-Print Network [OSTI]

arXiv:astro-ph/0009259v219Sep2000 How the Sun Shines John N. Bahcall What makes the sun shine? How does the sun produce the vast amount of energy necessary to support life on earth? These questions 1833 Treatise on Astronomy: The sun's rays are the ultimate source of almost every motion which takes

Walter, Frederick M.

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

422

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

423

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

424

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

425

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

426

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

427

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

428

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

429

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

430

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

431

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

432

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

433

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

434

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

435

Ballistic thermal point contacts made of GaAs nanopillars  

SciTech Connect (OSTI)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

436

GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE  

E-Print Network [OSTI]

GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

437

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

438

916 IEEE TRANSACTIONS ON AUDIO, SPEECH, AND LANGUAGE PROCESSING, VOL. 19, NO. 4, MAY 2011 AR-GARCH in Presence of Noise: Parameter  

E-Print Network [OSTI]

916 IEEE TRANSACTIONS ON AUDIO, SPEECH, AND LANGUAGE PROCESSING, VOL. 19, NO. 4, MAY 2011 AR-GARCH (VAD) based on the autoregressive-generalized autore- gressive conditional heteroscedasticity (AR-GARCH) model. The speech signal is modeled as an AR-GARCH process in the time domain, and the likelihood ratio

Cohen, Israel

439

IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH in Presence of Noise: Parameter  

E-Print Network [OSTI]

IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH (VAD) based on the autoregressive-generalized autore- gressive conditional heteroscedasticity (AR-GARCH) model. The speech signal is modeled as an AR-GARCH process in the time domain, and the likelihood ratio

Cohen, Israel

440

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Testing a GaAs cathode in SRF gun  

SciTech Connect (OSTI)

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-03-28T23:59:59.000Z

442

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

443

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor  

SciTech Connect (OSTI)

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25T23:59:59.000Z

444

Quaternary InGaAsSb Thermophotovoltaic Diodes  

SciTech Connect (OSTI)

In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-03-09T23:59:59.000Z

445

Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells  

SciTech Connect (OSTI)

The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

2014-06-16T23:59:59.000Z

446

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

447

Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles  

SciTech Connect (OSTI)

Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided.

Yu, Seungho; Kaviany, Massoud, E-mail: kaviany@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-02-14T23:59:59.000Z

448

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

449

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

Bia?ek, M., E-mail: marcin.bialek@fuw.edu.pl; Witowski, A. M.; Grynberg, M.; ?usakowski, J. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Orlita, M.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France); Czapkiewicz, M. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Wróbel, J. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów (Poland); Umansky, V. [Weizmann Institute of Science, Rehevot 76100 (Israel)

2014-06-07T23:59:59.000Z

450

Ultra High p-doping Material Research for GaN Based Light Emitters  

SciTech Connect (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

451

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate  

SciTech Connect (OSTI)

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

2014-10-15T23:59:59.000Z

452

GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects  

SciTech Connect (OSTI)

We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

1995-01-01T23:59:59.000Z

453

Global transverse momentum analysis for Ar+KCl and Ar+BaI/sub 2/ at 1. 2 GeV/nucleon  

SciTech Connect (OSTI)

High multiplicity collisions of 1.2 GeV/nucleon /sup 40/Ar on Kcl and on BaI/sub 2/ in the Bevalac streamer chamber are studied using the global transverse momentum analysis introduced by Danielewicz and Odyniec. For both systems, there is a sideward flow which is significantly larger than intranuclear cascade model predictions. The current results permit a study of trends in the multiplicity, mass and energy dependence of the observed flow signatures. Estimates of the stiffness of the nuclear equation of state at high density are discussed.

Beavis, D.; Chu, S.Y.; Fung, S.Y.; Gorn, W.; Keane, D.; Liu, Y.M.; VanDalen, G.; Vient, M.

1986-03-01T23:59:59.000Z

454

Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders  

E-Print Network [OSTI]

Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

Zheng, Yufeng

455

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

456

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

457

Discuss the role of StAR protein in steroid hormone synthesis This essay will determine the exact role of StAR, its structure, regulation, and problems associated with  

E-Print Network [OSTI]

synthesises glucocorticoids and mineralocorticoids which regulate metabolism and water balance, and also smallDa and 37-kDa. The essentiality of StAR was demonstrated by studying patients with congenital lipoid adrenal

Nottingham, University of

458

Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band kp model  

E-Print Network [OSTI]

is crucial for improving the performance of optical and optoelectronic devices.1­6 In this regard, AR the performance of optical and optoelectronic devices including photovoltaic systems and light-emitting diodes

459

Two-neutron knockout from neutron-deficient $^{34}$Ar, $^{30}$S, and $^{26}$Si  

E-Print Network [OSTI]

Two-neutron knockout reactions from nuclei in the proximity of the proton dripline have been studied using intermediate-energy beams of neutron-deficient $^{34}$Ar, $^{30}$S, and $^{26}$Si. The inclusive cross sections, and also the partial cross sections for the population of individual bound final states of the $^{32}$Ar, $^{28}$S and $^{24}$Si knockout residues, have been determined using the combination of particle and $\\gamma$-ray spectroscopy. Similar to the two-proton knockout mechanism on the neutron-rich side of the nuclear chart, these two-neutron removal reactions from already neutron-deficient nuclei are also shown to be consistent with a direct reaction mechanism.

K. Yoneda; A. Obertelli; A. Gade; D. Bazin; B. A. Brown; C. M. Campbell; J. M. Cook; P. D. Cottle; A. D. Davies; D. -C. Dinca; T. Glasmacher; P. G. Hansen; T. Hoagland; K. W. Kemper; J. -L. Lecouey; W. F. Mueller; R. R. Reynolds; J. R. Terry; J. A. Tostevin; H. Zwahlen

2006-07-15T23:59:59.000Z

460

K/AR dating of clinoptilolite, mordenite, and associated clays from Yucca Mountains, Nevada  

SciTech Connect (OSTI)

Zeolites are abundant in the geologic record in both continental and marine environments. The purpose of the present study is to evaluate the utility of K-bearing zeolites for dating by the K/Ar method to determine the time of zeolite diagenesis at Yucca Mountain, Nevada (Fig. 1). At Yucca Mountain, K-rich clinoptilolite and possibly mordenite are the only potentially K/Ar dateable secondary minerals present in the zeolite-rich tuffs except for some illite/smectites ({ge}10% illite layers) associated with these minerals. Direct dating of K-rich clinoptilolite, the most abundant zeolite in the altered tuffs, is important to delineate zeolite chronology as part of the site characterization of Yucca Mountain.

WoldeGabriel, G.

1993-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

A 33 yr CONSTANCY OF THE X-RAY CORONAE OF AR Lac AND ECLIPSE DIAGNOSIS OF SCALE HEIGHT  

E-Print Network [OSTI]

Extensive X-ray and EUV photometric observations of the eclipsing RS CVn system AR Lac were obtained over the years 1997-2013 with the Chandra X-Ray Observatory Extreme-Ultraviolet Explorer (EUVE). During primary eclipse, ...

Drake, Jeremy J.

462

arXiv:hep-ph/0208209v313Dec2002 FERMILAB-Pub-02/114-T  

E-Print Network [OSTI]

arXiv:hep-ph/0208209v313Dec2002 FERMILAB-Pub-02/114-T SCIPP 02/07 hep­ph/0208209 Higgs Boson Theory

California at Santa Cruz, University of

463

arXiv:hep-ph/0103095v19Mar2001 Low-Energy Supersymmetry and its Phenomenology  

E-Print Network [OSTI]

arXiv:hep-ph/0103095v19Mar2001 1 Low-Energy Supersymmetry and its Phenomenology Howard E. Habera for the phenomenology of Higgs bosons and supersymmetric particles at future colliders are discussed. 1. INTRODUCTION

California at Santa Cruz, University of

464

arXiv:nucl-ex/0002003v225Feb2000 Phenomenology of the deuteron electromagnetic form factors  

E-Print Network [OSTI]

arXiv:nucl-ex/0002003v225Feb2000 Phenomenology of the deuteron electromagnetic form factors D. The parameterizations allow a phenomenological characterization of the deuteron electromagnetic struc- ture. They can

Thomas Jefferson National Accelerator Facility

465

arXiv:hep-ex/0211027v111Nov2002 Search for neutrinoless decays involving the K0  

E-Print Network [OSTI]

arXiv:hep-ex/0211027v111Nov2002 1 Search for neutrinoless decays involving the K0 S meson K neutrinoless LFV modes within a model involving heavy Dirac neutrinos. The branching fractions depend

466

arXiv:physics/0401035v19Jan2004 A Didactic Approach to Linear Waves in the Ocean  

E-Print Network [OSTI]

arXiv:physics/0401035v19Jan2004 A Didactic Approach to Linear Waves in the Ocean F. J. Beron conceptual. Accordingly, the equations of motion are simplified as much as possible for didactic purposes

Beron-Vera, Francisco Javier

467

Colorado State University Industrial Assessment Center Report CO0564 1 AR No. 1 -Repair Compressed Air Leaks  

E-Print Network [OSTI]

Colorado State University Industrial Assessment Center Report CO0564 1 AR No. 1 - Repair Compressed was then divided by 0.25 hours to convert the energy consumption into kW, so the #12;Colorado State University

468

Study of reflection and transport in the microwave photo-excited GaAs/AlGaAs two dimensional electron system  

SciTech Connect (OSTI)

We present the results of a concurrent experimental study of microwave reflection and transport in the GaAs/AlGaAs two dimensional electron gas system and correlate observed features in the reflection with the observed transport features. The experimental results are compared with expectations based on theory.

Ye, Tianyu; Mani, Ramesh G. [Department of Physics and Astronomy, Georgia State University, Atlanta GA 30303 (United States); Wegscheider, Werner [Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich (Switzerland)

2013-12-04T23:59:59.000Z

469

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network [OSTI]

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

470

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network [OSTI]

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

471

Le magn)sme ar)ficiel pour les gaz d'atomes froids  

E-Print Network [OSTI]

Le magné)sme ar)ficiel pour les gaz d'atomes froids Jean Dalibard Année 2013-14 Chaire Atomes et rayonnement #12;Thème général du cours : le magné?sme = q v B = 0 perdu d'avance ? pas forcément... On peut émuler ce magné?sme par

Dalibard, Jean

472

Investigation of plasma-dust structures in He-Ar gas mixture  

SciTech Connect (OSTI)

The paper reports on the first experiments with plasma-dust formations in dc gas discharge plasma for a He-Ar mixture. It is shown that the choice of light and heavy gases for the mixture suppresses ion heating in electric field under the conventional conditions of experiments and results in a supersonic jet with high Mach numbers. Distribution functions for drifting ions in the gas mixture are calculated for various mixture concentrations, electric field strengths, and gas pressures.

Maiorov, S. A. [A.M. Prokhorov General Physics Institute of Russian Academy of Sciences, Moscow (Russian Federation); Ramazanov, T. S.; Dzhumagulova, K. N.; Jumabekov, A. N.; Dosbolayev, M. K. [Al Farabi Kazakh National University, IETP, Tole bi 96a, Almaty, 050012 (Kazakhstan)

2008-09-15T23:59:59.000Z

473

K-vacancy levels in Ne, Mg, Si, S, Ar, and Ca  

E-Print Network [OSTI]

The HFR and AUTOSTRUCTURE atomic structure codes are used to compute complete data sets of level energies, wavelengths, A-values, and radiative and Auger widths for K-vacancy states of the Ne, Mg, Si, S, Ar, and Ca isonuclear sequences. Ions with electron number N>9 are treated for the first time. Detailed comparisons with previous measurements and theoretical data for ions with N<=9 are carried out in order to estimate reliable accuracy ratings.

P. Palmeri; P. Quinet; C. Mendoza; M. A. Bautista; J. Garcia; T. R. Kallman

2008-04-04T23:59:59.000Z

474

arXiv:hep-ph/9901365v121Jan1999 SCIPP 99/06  

E-Print Network [OSTI]

arXiv:hep-ph/9901365v121Jan1999 SCIPP 99/06 January, 1999 hep­ph/9901365 How Well Can We Predict, b) are the corresponding Yukawa couplings. The tree-level physical Higgs spectrum is easily computed| mZ. The maximum tree-level upper bound of mZ is saturated when one of the vevs vanishes (and mA0 > m

California at Santa Cruz, University of

475

arXiv:hep-ph/9906310v110Jun1999 SLAC-PUB-8173  

E-Print Network [OSTI]

arXiv:hep-ph/9906310v110Jun1999 SLAC-PUB-8173 SCIPP-99/24 hep-ph/9906310 June, 1999 Neutrino masses-generation models, three sneutrino-antisneutrino mass splittings are generated at tree-level. In contrast, only one neutrino mass is generated at tree-level; the other two neutrinos acquire masses at one-loop. In many

California at Santa Cruz, University of

476

arXiv:1201.6305v1[hep-ph]30Jan2012 CERNPHTH/2012022  

E-Print Network [OSTI]

arXiv:1201.6305v1[hep-ph]30Jan2012 CERN­PH­TH/2012­022 KA­TP­03­2012 MSSM Higgs Bosons from Stop´isica de Cantabria (CSIC-UC), Santander, Spain 2 PH-TH, CERN, CH­1211 Gen`eve 23, Switzerland 3 Institut f ratios. They are roughly of O(10%) of the tree-level results, but can go up to 30% or higher

477

arXiv:hep-ph/0611168v113Nov2006 SI-HEP-2006-15  

E-Print Network [OSTI]

arXiv:hep-ph/0611168v113Nov2006 SI-HEP-2006-15 November 13, 2006 Inclusive Semi-leptonic B Decays orders in the 1/mb expansion in inclusive semi-leptonic decays at tree level. We reproduce the known 1/m3 b terms and compute the 1/m4 b terms at tree level. The appearing non-perturbative parameters

Siegen, Universität

478

arXiv:hepph/9903516 hepph/9903516 BNLHET99/6  

E-Print Network [OSTI]

arXiv:hep­ph/9903516 v2 28 Dec 1999 hep­ph/9903516 BNL­HET­99/6 DFTT 16/99 UCLA/99/TEP/11 MSUHEP are required: a) n particle production amplitudes at tree level, one loop and two loops; b) n+1 particle production amplitudes at tree level and one loop; c) n + 2 particle production amplitudes at tree level

Schmidt, Carl

479

arXiv:hep-ph/9909335v113Sep1999 SCIPP 98/47  

E-Print Network [OSTI]

arXiv:hep-ph/9909335v113Sep1999 SCIPP 98/47 August, 1999 hep­ph/9909335 Radiative Corrections that MW = MZ cos W at tree level, the one-loop corrections due to virtual charged Higgs bosons always) symmetry" [4]. This symmetry leads to the tree-level relation, M2 W /M2 Z cos2 W = 1, a relation

California at Santa Cruz, University of

480

Electron shakeoff following the $\\Beta$+ decay of trapped 35Ar+ ions  

E-Print Network [OSTI]

The electron shakeoff of $^{35}$Cl atoms resulting from the $\\beta$$^+$ decay of $^{35}$Ar$^+$ ions has been investigated using a Paul trap coupled to a recoil-ion spectrometer. The charge-state distribution of the recoiling daughter nuclei is compared to theoretical calculations accounting for shakeoff and Auger processes. The calculations are in excellent agreement with the experimental results and enable to identify the ionization reaction routes leading to the formation of all charge states.

Couratin, C; Fabre, B; Pons, B; Fléchard, X; Liénard, E; Ban, G; Breitenfeldt, M; Delahaye, P; Durand, D; Méry, A; Naviliat-Cuncic, O; Porobic, T; Quéméner, G; Rodriguez, D; Severijns, N; Thomas, J C; Van Gorp, S

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

arXiv:1311.5455v1 NLO QCD Corrections to Electroweak Higgs Boson  

E-Print Network [OSTI]

arXiv:1311.5455v1 [hep­ph] 21 Nov 2013 NLO QCD Corrections to Electroweak Higgs Boson Plus Three.sjodahl@thep.lu.se The implementation of the full next­to­leading order (NLO) QCD corrections to electroweak Higgs boson plus three jet Model (SM) Higgs boson [3, 4, 5, 6]. Further, reports from the ATLAS and CMS Collaborations indicate

Lunds Universitet,

482

Ga lithography in sputtered niobium for superconductive micro and nanowires  

SciTech Connect (OSTI)

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

2014-08-18T23:59:59.000Z

483

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

484

arXiv:0706.2031v1[physics.hist-ph]14Jun2007 APS/123-QED Relativity tests by complementary rotating Michelson-Morley experiments  

E-Print Network [OSTI]

of Western Australia, School of Physics M013, 35 Stirling Hwy., Crawley 6009 WA, Australia Peter Wolf LNE Perth, Australia) uses microwave whispering-gallery sapphire resonators. Within the standard model with a first glimpse of effects of a future theory of quantum gravity in the low-energy limit [1, 2, 3]. Since

Peters, Achim

485

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect (OSTI)

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

486

Vibrational relaxation in I2 ,,Ar...n ,,n1,2,6,9... and I2  

E-Print Network [OSTI]

with excitation energy. The observed dynamics for I2 (CO2) and several of the I2 (Ar)n clusters directly probe is complemented by molecular dynamics simulations by Parson and co-workers2,13­18 and others.19­22 The two solvent in I2 (Ar)20 also a full solvent shell occurs on a time scale of 130 ps.7 Molecular dynamics

Neumark, Daniel M.

487

arXiv:0711.2890v5[hep-ph]10Jun2008 SCIPP-07/16  

E-Print Network [OSTI]

arXiv:0711.2890v5[hep-ph]10Jun2008 SCIPP-07/16 arXiV:0711.2890 [hep-ph] November, 2007 Hard to tree-level supersymmetric relations in the chargino and neutralino sectors that can be as large as 56 the effects of the SUSY-breaking one-loop effects appear as corrections to tree-level relations. For example

California at Santa Cruz, University of

488

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect (OSTI)

Simultaneous growth of ?111?{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

489

Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells  

SciTech Connect (OSTI)

This theoretical work analyzes the photovoltaic effect in non-polar InGaN/GaN solar cells. Our electronic transport model considers quantum behaviors related to confinement, tunneling, electron-phonon, and electron-photon scatterings. Based on this model, we compare a multiple quantum wells cell with its thick-layer counterpart. We show that the structure of multiple quantum wells is a promising design providing better compromise between photon-absorption and electronic transport. This balance is necessary since these two phenomena are shown to be antagonist in nanostructure based solar cells. In these devices, we also show that phonon absorption increases the short-circuit current, while phonon emission reduces the open-circuit voltage.

Cavassilas, Nicolas; Michelini, Fabienne; Bescond, Marc [Aix Marseille Univ, CNRS, IM2NP UMR 7334, 13384 Marseille (France)

2014-08-11T23:59:59.000Z

490

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes  

SciTech Connect (OSTI)

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn{sup 2} +Cn{sup 3} +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10{sup ?29} ?cm{sup 6} ?s{sup ?1} . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

2010-01-01T23:59:59.000Z

491

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect (OSTI)

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

492

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect (OSTI)

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

493

Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes  

SciTech Connect (OSTI)

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

2014-09-15T23:59:59.000Z

494

Distinctive plume formation in atmospheric Ar and He plasmas in microwave frequency band and suitability for biomedical applications  

SciTech Connect (OSTI)

Distinctive discharge formation in atmospheric Ar and He plasmas was observed in the microwave frequency band using coaxial transmission line resonators. Ar plasmas formed a plasma plume whereas He formed only confined plasmas. As the frequency increased from 0.9 GHz to 2.45 GHz, the Ar plasma exhibited contraction and filamentation, and the He plasmas were constricted. Various powers and gas flow rates were applied to identify the effect of the electric field and gas flow rate on plasma plume formation. The He plasmas were more strongly affected by the electric field than the Ar plasmas. The breakdown and sustain powers yielded opposite results from those for low-frequency plasmas (?kHz). The phenomena could be explained by a change in the dominant ionization process with increasing frequency. Penning ionization and the contribution of secondary electrons in sheath region reduced as the frequency increased, leading to less efficient ionization of He because its ionization and excitation energies are higher than those of Ar. The emission spectra showed an increase in the NO and N{sub 2} second positive band in both the Ar and He plasmas with increasing frequency whereas the hydroxyl radical and atomic O peaks did not increase with increasing frequency but were highest at particular frequencies. Further, the frequency effect of properties such as the plasma impedance, electron density, and device efficiency were presented. The study is expected to be helpful for determining the optimal conditions of plasma systems for biomedical applications.

Lee, H. Wk.; Kang, S. K.; Won, I. H.; Kim, H. Y.; Kwon, H. C.; Sim, J. Y.; Lee, J. K. [Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)] [Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2013-12-15T23:59:59.000Z

495

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect (OSTI)

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

496

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect (OSTI)

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

497

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect (OSTI)

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

498

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect (OSTI)

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

499

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect (OSTI)

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

500

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z