National Library of Energy BETA

Sample records for wa ga ar

  1. Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

    SciTech Connect (OSTI)

    Nakano, Yoshitaka Ogawa, Daisuke; Nakamura, Keiji; Kawakami, Retsuo; Niibe, Masahito

    2015-07-15

    The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.

  2. Inductively coupled plasmareactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect (OSTI)

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

  3. Category:Seattle, WA | Open Energy Information

    Open Energy Info (EERE)

    Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total....

  4. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    BayWa Group Jump to: navigation, search Name: BayWa Group Place: Munich, Germany Zip: 81925 Sector: Services, Solar Product: Germany-based company with international operations...

  5. Advance Patent Waiver W(A)2002-023 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2-023 Advance Patent Waiver W(A)2002-023 Advance Patent Waiver W(A)2002-023 (1.52 MB) More Documents & Publications Advance Patent Waiver W(A)2006-028 WA05056IBMWATSONRESEARCH...

  6. Hanford, WA Selected as Plutonium Production Facility | National Nuclear

    National Nuclear Security Administration (NNSA)

    Security Administration | (NNSA) Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility Hanford, WA Groves selects Hanford, Washington, as site for full-scale plutonium production and separation facilities. Three reactors--B, D, and F--are built

  7. AR-CITE

    Energy Science and Technology Software Center (OSTI)

    003796MLTPL00 AR-CITE: Analysis of Search Results for the Clarification and Identification of Technology Emergence

  8. Recent results from CERN-WA98

    SciTech Connect (OSTI)

    Stankus, P.; WA98 Collaboration

    1997-02-01

    The CERN experiment WA98 is a general-survey, open-spectrometer experiment designed to examine 160 A GeV/c Pb+A collisions at the CERN-SPS. The experiment has a broad physics agenda, as suggested by its many different subsystems. A diagram of the experiment as it stood in 1995 is shown in the report. Detectors whose results are presented here are described briefly.

  9. RAPID/Roadmap/5-WA-a | Open Energy Information

    Open Energy Info (EERE)

    Geothermal Hydropower Solar Tools Contribute Contact Us Drilling and Well Development (5-WA-a) In Washington geothermal drilling and well development are regulated by the...

  10. RAPID/Roadmap/18-WA-b | Open Energy Information

    Open Energy Info (EERE)

    Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Dangerous Solid Waste Permit (18-WA-b) The Washington State Department of Ecology (WSDE) oversees the...

  11. RAPID/Roadmap/15-WA-a | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Notice of Construction Permit (15-WA-a) This flowchart illustrates...

  12. RAPID/Roadmap/15-WA-b | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Operating Permit (15-WA-b) This flowchart illustrates the process for...

  13. RAPID/Roadmap/14-WA-b | Open Energy Information

    Open Energy Info (EERE)

    RAPIDRoadmap14-WA-b < RAPID | Roadmap Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal...

  14. RAPID/Roadmap/14-WA-c | Open Energy Information

    Open Energy Info (EERE)

    Geothermal Hydropower Solar Tools Contribute Contact Us Underground Injection Control Permit (14-WA-c) The Safe Drinking Water Act requires Washington to implement...

  15. RAPID/Roadmap/19-WA-d | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Conservancy Board Transfer or Change of Water Right (19-WA-d) In 1997, the Washington...

  16. RAPID/Roadmap/19-WA-c | Open Energy Information

    Open Energy Info (EERE)

    Geothermal Hydropower Solar Tools Contribute Contact Us Transfer or Change of Water Right (19-WA-c) Much of Washington's public waters have been accounted for through...

  17. RAPID/Roadmap/19-WA-b | Open Energy Information

    Open Energy Info (EERE)

    About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us New Water Right Permit Process (19-WA-b) Washington uses a prior appropriation system for the...

  18. RAPID/Roadmap/12-WA-b | Open Energy Information

    Open Energy Info (EERE)

    Geothermal Hydropower Solar Tools Contribute Contact Us State Trust Lands Habitat Conservation Plan Compliance (12-WA-b) The State of Washington has a Habitat Conservation Plan...

  19. RAPID/Roadmap/19-WA-e | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Well Notice of Intent for New Well (19-WA-e) A...

  20. RAPID/Roadmap/11-WA-b | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Human Remains Process (11-WA-b) This flowchart...

  1. Microsoft Word - WA Parish_MAP_Final.docx

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and compression system at Unit 8 of the existing W.A. ... subject of a mitigation commitment. (b) In certain ... systems to produce electricity at greater efficiencies, ...

  2. DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Legend, Seattle, WA, Custom Home DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA, Custom Home Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored ...

  3. Advance Patent Waiver W(A)2011-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1-006 Advance Patent Waiver W(A)2011-006 This document waives certain patent rights the ... W(A)2011-006 (218.72 KB) More Documents & Publications WA05022DOWCHEMICALCOMPANYWaiv...

  4. Advance Patent Waiver W(A)2011-039 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    39 Advance Patent Waiver W(A)2011-039 This document waives certain patent rights the ... W(A)2011-039 (693.45 KB) More Documents & Publications Advance Patent Waiver W(A)2008-033 ...

  5. DOE - Office of Legacy Management -- Hanford Engineer Works - WA 01

    Office of Legacy Management (LM)

    Hanford Engineer Works - WA 01 FUSRAP Considered Sites Site: Hanford Engineer Works (WA.01 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see http://www.hanford.gov/ Documents Related to Hanford Engineer Works

  6. RAPID/Roadmap/6-WA-a | Open Energy Information

    Open Energy Info (EERE)

    in the Washington Administrative Code. 6-WA-a - Oversize-Overweight Load Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  7. RAPID/Roadmap/3-WA-b | Open Energy Information

    Open Energy Info (EERE)

    the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  8. RAPID/Roadmap/19-WA-a | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Access and Water Rights Overview (19-WA-a) Pursuant to RCW 78.60.060, developers that...

  9. BayWa Sunways JV | Open Energy Information

    Open Energy Info (EERE)

    JV that specialises in developing, planning and realizing medium-sized to large photovoltaic systems and solar plants. References: BayWa & Sunways JV1 This article is a stub....

  10. WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf (5.62 MB) More Documents & Publications WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf

  11. DOE - Office of Legacy Management -- University of Washington - WA 0-01

    Office of Legacy Management (LM)

    Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating

  12. Climate Action Champions: Seattle, WA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Seattle, WA Climate Action Champions: Seattle, WA The City of Seattle has long been at the leading edge of environmental innovation. Seattle has been recycling for over 25 years and today has one of the highest recycling and composting rates nationwide. In 2005, Seattle City Light became the first electric utility in the nation to be carbon neutral. Recently, Seattle was recognized as the “most sustainable city in the nation” by STAR communities with a 5-STAR rating and the highest

  13. Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 5 2015 4 4 2 1 2016 1 2 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sumas, WA LNG Imports from All Countries

  14. Mechanism of somatic hypermutation at the WA motif by human DNA...

    Office of Scientific and Technical Information (OSTI)

    at the WA motif by human DNA polymerase eta Citation Details In-Document Search Title: Mechanism of somatic hypermutation at the WA motif by human DNA polymerase eta Authors: ...

  15. File:06-WA-b - Washington Construction Storm Water Permit.pdf...

    Open Energy Info (EERE)

    6-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water...

  16. Advance Patent Waiver W(A)2013-011 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1 Advance Patent Waiver W(A)2013-011 This document waives certain patent rights the ... Advance Patent Waiver W(A)2013-011 (996.94 KB) More Documents & Publications Advance ...

  17. Advance Patent Waiver W(A)2010-028 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    28 Advance Patent Waiver W(A)2010-028 This document waives certain patent rights the ... Advance Patent Waiver W(A)2010-028 (192.16 KB) More Documents & Publications Advance ...

  18. Advance Patent Waiver W(A)2009-030 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9-030 Advance Patent Waiver W(A)2009-030 This document waives certain patent rights the ... Advance Patent Waiver W(A)2009-030 (176.3 KB) More Documents & Publications ...

  19. Advance Patent Waiver W(A)2008-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8-006 Advance Patent Waiver W(A)2008-006 This document waives certain patent rights the ... Advance Patent Waiver W(A)2008-006 (216.42 KB) More Documents & Publications ...

  20. Advance Patent Waiver W(A)2011-034 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1-034 Advance Patent Waiver W(A)2011-034 This document waives certain patent rights the ... Advance Patent Waiver W(A)2011-034 (236.89 KB) More Documents & Publications Advance ...

  1. Advance Patent Waiver W(A)2012-034 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    34 Advance Patent Waiver W(A)2012-034 This document waives certain patent rights the ... Advance Patent Waiver W(A)2012-034 (1.07 MB) More Documents & Publications Advance Patent ...

  2. Advance Patent Waiver W(A)2009-055 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2009-055 (232.19 KB) More Documents & Publications WA03026EIDUPONTDENEMOURSWaiver...

  3. Advance Patent Waiver W(A)2006-028 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    and the general public. Advance Patent Waiver W(A)2006-028 (614.91 KB) More Documents & Publications Advance Patent Waiver W(A)2005-048 2011INCITEFactSheets.pdf Advance ...

  4. Advance Patent Waiver W(A)2010-017 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    17 Advance Patent Waiver W(A)2010-017 This document waives certain patent rights the ... Advance Patent Waiver W(A)2010-017 (203.28 KB) More Documents & Publications Advance ...

  5. Advance Patent Waiver W(A)2010-038 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-038 (295.5 KB) More Documents & Publications Advance Patent Waiver W(A)2010-037

  6. Advance Patent Waiver W(A)2010-037 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-037 (236.64 KB) More Documents & Publications Advance Patent Waiver W(A)2010-038

  7. WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 22_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf (1.38 MB) More Documents & Publications WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf WA_03_029_CARGILL_DOW_LLC_Waiver_of_Domestic_and_Foreign_Pat.pdf WA_02_052_CARGILL_DOW_Waiver_of_Domestic_and_Foreign_Patent_

  8. WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 1_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf (18.1 MB) More Documents & Publications WA_04_053_IBM_CORP_Waiver_of_the_Government_U.S._and_Foreign.pdf WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf Advance Patent Waiver W(A)2002-023

  9. WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 10_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf (1.41 MB) More Documents & Publications WA_02_039_SHELL_SOLAR_SYSTEMS_Waiver_of_Patent_Rights_Under_.pdf WA_05_059_SHELL_SOLAR_INDUSTRIES_LP_Waiver_of_Domestic_and_F.pdf Advance Patent Waiver W(A)2005-060

  10. WA_03_040_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 40_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf WA_03_040_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf (705.58 KB) More Documents & Publications WA_02_054_ADVANCED_TECHNLOGY_MATERIALS_Waiver_of_Domestic_an.pdf WA_02_038_UNITED_TECHNOLOGIES_CORP_Waiver_of_Domestic_and_Fo.pdf Advance Patent Waiver W(A)2006-021

  11. WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 47_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf (607.19 KB) More Documents & Publications WA_04_046_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf WA_04_071_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf Advance Patent Waiver W(A)2005-052

  12. WA_04_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 4_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf WA_04_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf (691.53 KB) More Documents & Publications WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_.pdf WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A.pdf WA_04_074_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_I

  13. WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 6_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf (1.22 MB) More Documents & Publications WA_07_016_OSRAM_SYLVANIA_Waiver_of_Patent_Rights_Under_a_DOE.pdf Advance Patent Waiver W(A)2005-060 WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore

  14. WA_02_036_DE_NORA_NORTH_AMERICA_Waiver_of_Domestic_and_Foreg...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6DENORANORTHAMERICAWaiverofDomesticandForeg.pdf WA02036DENORANORTHAMERICAWaiverofDomesticandForeg.pdf (778.5 KB) More Documents & Publications ...

  15. EIS-0397: Lyle Falls Fish Passage Project, WA

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

  16. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  17. VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2 1 Locations of Smart Grid Demonstration and Large-Scale Energy Storage Projects NH 32 Awards Support Projects in 24 States 6 11 MA

  18. VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2 1 Smart Grid Demonstration Project Locations NH MA 16 Awards Support Projects in 21 States

  19. VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7 2 1 Energy Storage Demonstration Project Locations NH 16 Awards Support Projects in 9 States MA

  20. VA VT CT RI MT WY CO ID UT OR NV CA AZ NM WA TN WV NC AR OK

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2 1 Locations of Smart Grid Demonstration and Large-Scale Energy Storage Projects NH 32 Awards Support Projects in 24 States 6 11 MA

  1. WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 15_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf (1.8 MB) More Documents & Publications WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf Advance Patent Waiver W(A)2002-023 WC_1997_004_CLASS_ADVANCE_WAIVER_Under_Domestic_First_and_Se

  2. WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 4_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf (734.86 KB) More Documents & Publications WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und

  3. WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 5_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf (1.18 MB) More Documents & Publications WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_

  4. WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 3_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf (1.15 MB) More Documents & Publications WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei

  5. WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 5_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf (8.82 MB) More Documents & Publications WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign

  6. WA_1995_033_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 3_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf WA_1995_033_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf (3.94 MB) More Documents & Publications WA_1993_015_XSIRIUS_INC_Waiver_of_the_Governments_US_and_.pdf Advance Patent Waiver W(A)2012-030 Identified Patent Waiver W(I)2008-008

  7. WA_98_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 8_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf WA_98_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf (1.1 MB) More Documents & Publications Advance Patent Waiver W(A)1998-014 WA_00_023_ALCOA_INC_Waiver_of_Domestic_and_Foreign_Patent_Ri.pdf U.S. Energy Requirements for Aluminum Production

  8. WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 33_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf (1.05 MB) More Documents & Publications WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf WA_05_022_DOW_CHEMICAL_COMPANY_Waiver_of_domestic_and_Foreig.pdf WA_03_029_CARGILL_DOW_LLC_Waiver_of_Domestic_and_Foreign_Pat.pdf

  9. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Bellingham, WA DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV. The 1,055-ft2 two-story production home has 6-in. SIP walls, a 10-in. SIP roof, and ICF foundation walls with R-20 high-density rigid EPS foam under the slab. A single ductless heat pump heats

  10. New Whole-House Solutions Case Study: Quadrant Homes, Kent, WA

    Energy Savers [EERE]

    Kentlake Highlands | Kent, WA PROJECT INFORMATION Construction: New home Type: ... hundreds of builders were left sitting on thousands of unsold new homes, but not Quadrant. ...

  11. (The 1990 run of the WA80 experiment)

    SciTech Connect (OSTI)

    Young, G.R.

    1990-09-18

    The traveler spent six weeks at CERN participating in the 1990 run of the WA80 experiment. The traveler concentrated on trigger electronics for the first two weeks and on operation of the experiment for much of the next four. New electronics designed at ORNL for reading out the new BGO spectrometer were tested with the BGO in beam. Improvements were made, in collaboration with the ORNL engineers who designed the electronics. Plans were made for constructing the electronics in large quantities. Conversations were had with other members of WA80 about the analysis of results from this year's run and our plans for the 1991/1992 runs proposed for CERN. Lengthy conversations were had about the draft of a first paper concerning limits on direct photon production. Finally, the traveler attended an all-day session of the dilepton working group chartered to consider dilepton and photon experiments using heavy-ion beams in CERN's to-be-proposed Large Hadron Collider (LHC). At this meeting the traveler presented recent results from the group working on such a proposal for RHIC and updated his earlier presentation of June 1990 in this working group.

  12. WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 7_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf (904.04 KB) More Documents & Publications Advance Patent Waiver W(A)2008-004 Next Generation Bipolar Plates for Automotive PEM Fuel Cells Specialty Vehicles and Material Handling Equipment

  13. Ar-40/Ar-39 Age Constraints for the Jaramillo Normal Subchron...

    Open Energy Info (EERE)

    oxygen isotope, climate record calibration of the astronomical timescale proposed by Johnson (1982) and Shackleton et al. (1990). Ar-40Ar-39 ages of a normally magnetized...

  14. Agricultural Research Service (ARS) Research Participation Program -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Managed by ORAU Agricultural Research Service (ARS) Research Participation Program Home About USDA ARS About ORISE Current Research Opportunities Site Map Contact ORISE Facebook Twitter Applicants Welcome to the Agricultural Research Service (ARS) Research Participation Program The Agricultural Research Service (ARS) Research Participation Program will serve as the next step in the educational and professional development of scientists and engineers interested in agricultural related

  15. Best Practices Case Study: Devoted Builders, LLC, Mediterrtanean Villas, Pasco,WA

    SciTech Connect (OSTI)

    2010-12-01

    Devoted Builders of Kennewick, WA worked with Building America's BIRA team to achieve the 50% Federal tax credit level energy savings on 81 homes at its Mediterranean Villas community in eastern Washington.

  16. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

  17. Advance Patent Waiver W(A)2010-041 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advance Patent Waiver W(A)2010-041 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by W....

  18. W.A. Parish Post-Combustion CO{sub 2} Capture and Sequestration...

    Office of Scientific and Technical Information (OSTI)

    Title: W.A. Parish Post-Combustion COsub 2 Capture and Sequestration Project Phase 1 ... and reduce its emissions of carbon dioxide (COsub 2) and other greenhouse gases (GHGs). ...

  19. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1)

    Broader source: Energy.gov [DOE]

    DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the EPA for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification.

  20. WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 7_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf (8.04 MB) More Documents & Publications WA_99_014_UNITED_SOLAR_SYSTEMS_CORP_Waiver_of_Domestic_and_F.pdf Inspection Report: INS-O-00-02 Class Patent Waiver W(C)2004-001

  1. 244-AR Vault Interim Stabilization Project Plan

    SciTech Connect (OSTI)

    LANEY, T.

    2000-03-24

    The 244-AR Vault Facility, constructed between 1966 and 1968, was designed to provide lag storage and treatment for the Plutonium-Uranium Extraction Facility (PUREX) tank farm sludges. Tank farm personnel transferred the waste from the 244-AR Vault Facility to B Plant for recovery of cesium and strontium. B Plant personnel then transferred the treatment residuals back to the tank farms for storage of the sludge and liquids. The last process operations, which transferred waste supporting the cesium/strontium recovery mission, occurred in April 1978. After the final transfer in 1978, the 244-AR facility underwent a cleanout. However, 2,271 L (600 gal) of sludge were left in Tank 004AR from an earlier transfer from Tank 241-AX-104. When the cleanout was completed, the facility was placed in a standby status. The sludge had been transferred to Tank 004AR to support Pacific Northwest National Laboratory [PNNL] vitrification work. Documentation of waste transfers suggests that a portion of the sludge may have been moved from Tank 004AR to Tank 002AR in preparation for transfer back to the AX Tank Farm; however, quantities of the sludge that were moved to Tank 002AR from that transfer must be estimated.

  2. Advance Patent Waiver W(A)2009-058 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    09-058 Advance Patent Waiver W(A)2009-058 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by SOLAR TURBINES INC under agreement DE-FC26-09NT05873, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. Advance Patent Waiver W(A)2009-058 (182.99 KB) More Documents & Publications

  3. Advance Patent Waiver W(A)2010-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    0-006 Advance Patent Waiver W(A)2010-006 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by HYDROGEN ENERGY OF CALIFORNIA under agreement DE-FE0000663, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-006 (229.05 KB) More Documents & Publications Identified Patent Waiver W(I)2010-006 Identified

  4. Sumas, WA Liquefied Natural Gas Imports from Canada (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    from Canada (Million Cubic Feet) Sumas, WA Liquefied Natural Gas Imports from Canada (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 5 2015 4 4 2 1 2016 1 2 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sumas, WA LNG Imports from Canada

  5. Mueller Systems ArKion | Open Energy Information

    Open Energy Info (EERE)

    Mueller Systems ArKion Jump to: navigation, search Name: Mueller Systems (ArKion) Place: Middleboro, Massachusetts Zip: MA 02346 Product: Massachusetts-based energy management...

  6. DOE Zero Energy Ready Home Case Study: Clifton View Homes, Whidbey Island, WA

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home on Whidbey Island, WA, that scores HERS 37 without PV or HERS -13 with 10 kW PV, enough to power the home and an electric car. The two-story custom home...

  7. Hazard evaluation for 244-AR vault facility

    SciTech Connect (OSTI)

    BRAUN, D.J.

    1999-08-25

    This document presents the results of a hazard identification and evaluation performed on the 244-AR Vault Facility to close a USQ (USQ No.TF-98-0785, Potential Inadequacy in Authorization Basis (PIAB): To Evaluate Miscellaneous Facilities Listed In HNF-2503 And Not Addressed In The TWRS Authorization Basis) that was generated as part of an evaluation of inactive TWRS facilities. A hazard evaluation for the Hanford Site 244-AR Vault Facility was performed. The process and results of the hazard evaluation are provided in this document. A previous hazard evaluation was performed for the 244-AR Vault Facility in 1996 in support of the Basis for Interim Operation (BIO) (HNF-SD-WM-BIO-001, 1998, Revision 1) of the Tank Waste Remediation System (TWRS). The results of that evaluation are provided in the BIO. Upon review of those results it was determined that hazardous conditions that could lead to the release of radiological and toxicological material from the 244-AR vaults due to flooding was not addressed in the original hazards evaluation. This supplemental hazard evaluation addresses this oversight of the original hazard evaluation. The results of the hazard evaluation were compared to the current TWRS BIO to identify any hazardous conditions where Authorization Basis (AB) controls may not be sufficient or may not exist. This document is not part of the AB and is not a vehicle for requesting changes to the AB. It is only intended to provide information about hazardous conditions associated with the condition and configuration of the 244-AR vault facility. The AB Control Decision process could be used to determine the applicability and adequacy of existing AB controls as well as any new controls that may be needed for the identified hazardous conditions associated with 244-AR vault flooding. This hazard evaluation does not constitute an accident analysis.

  8. Microsoft Word - AR VR rev.1.wpd

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EA15PC3041-1-0 August 18, 2003 Rev. 1 Page 1 of 1 Working Copy AR/VR Transmittal Register 1. Page 1 of 2. PR/PO Number: 3. Supplier: 4. Buyer: 5. STR or Cognizant Engineer: 6. Project, System, or Equipment Description: 7. AR/VR No. 8. SOW or Spec. No. 9. Description of Submittal or Special Conditions 10. For Approval/ Record 11. Date Due to WTS or Prior to 12. Date Rec. 13. Date to STR 14. Date from STR 15. Disposition A, C, D 16. Resubmittal Required? 17. Date to Supplier 1. Facility Compliance

  9. HIA 2015 DOE Zero Energy Ready Home Case Study: Dwell Development, Reclaimed Modern, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dwell Development Reclaimed Modern Seattle, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed

  10. DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA, Custom Home

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 37 without PV, HERS -1 with PV. This 1,915-square-foot custom home has SIP walls and roof, R-20 XPS under the slab, triple-pane windows, an air to water heat pump for radiant heat, and balanced ventilation with timer-controlled fans to bring in and exhaust air.

  11. DOE Zero Energy Ready Home Case Study: Clifton View Homes, Coupeville, WA, Systems Home

    Broader source: Energy.gov [DOE]

    Case-study of a DOE Zero Energy Ready Home on Whidbey Island, WA, that scored HERS 45 without PV. This 2,908-square-foot custom/system home has a SIP roof and walls, R-20 rigid foam under slab, triple-pane windows, ground source heat pump for radiant floor heat, and a unique balanced ventilation system using separate exhaust fans to bring air into and out of home.

  12. DOE Zero Energy Ready Home Case Study: Dwell Development, Seattle, WA, Systems Home

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 34 without PV. This 2,000-square-foot system home has R-45 double-stud walls, an unvented flat roof with 2 inches of spray foam plus 18 inches blown cellulose, R-42 XPS under slab, triple-pane windows, and a ductless mini-split heat pump.

  13. DOE Zero Energy Ready Home Case Study 2013: Clifton View Homes, Coupeville, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you

  14. DOE Zero Energy Ready Home Case Study 2013: Dwell Development, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  15. DOE Zero Energy Ready Home Case Study 2013: TC Legend, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  16. Category:Little Rock, AR | Open Energy Information

    Open Energy Info (EERE)

    71 KB SVMediumOffice Little Rock AR Entergy Arkansas Inc.png SVMediumOffice Little ... 68 KB SVMidriseApartment Little Rock AR Entergy Arkansas Inc.png SVMidriseApartment Lit......

  17. ARS 12 - Courts and Civil Proceedings | Open Energy Information

    Open Energy Info (EERE)

    ARS 12 - Courts and Civil Proceedings Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS 12 - Courts and Civil ProceedingsLegal...

  18. A.R.S. 11-801 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 11-801 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 11-801Legal Abstract County Planning: Definitions...

  19. A.R.S. 41-865 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 41-865Legal Published NA Year Signed or Took Effect 2015 Legal Citation A.R.S. ...

  20. A.R.S. 11-802 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 11-802 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 11-802Legal Abstract County Planning: County planning...

  1. A.R.S. 40-281 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 40-281 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 40-281Legal Abstract Power Plant and Transmission Line...

  2. A.R.S. 40-360 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 40-360 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 40-360Legal Published NA Year Signed or Took Effect...

  3. A.R.S. 40-282 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 40-282 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 40-282Legal Abstract Power Plant and Transmission Line...

  4. A.R.S. 9-462 | Open Energy Information

    Open Energy Info (EERE)

    A.R.S. 9-462 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 9-462Legal Published NA Year Signed or Took Effect...

  5. Beta decay of 32Ar for fundamental tests

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Monte-Carlo calculation of proton energy scalar vector Experimental set-up Super-conducting solenoid B3.5 Tesla Simultaneous fit of 32 Ar and 33 Ar data 1999 result: 0.9980(52) ...

  6. Paleotemperatures at the lunar surfaces from open system behavior of cosmogenic 38Ar and radiogenic 40Ar

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shuster, David L.; Cassata, William S.

    2015-02-10

    The simultaneous diffusion of both cosmogenic 38Ar and radiogenic 40Ar from solid phases is controlled by the thermal conditions of rocks while residing near planetary surfaces. Combined observations of 38Ar/37Ar and 40Ar/39Ar ratios during stepwise degassing analyses of neutron-irradiated Apollo samples can distinguish between diffusive loss of Ar due to solar heating of the rocks and that associated with elevated temperatures during or following impact events; the data provide quantitative constraints on the durations and temperatures of each process. From sequentially degassed 38Ar/37Ar ratios can be calculated a spectrum of apparent 38Ar exposure ages versus the cumulative release fraction ofmore » 37Ar, which is particularly sensitive to conditions at the lunar surface typically over ~106–108 year timescales. Due to variable proportions of K- and Ca-bearing glass, plagioclase and pyroxene, with variability in the grain sizes of these phases, each sample will have distinct sensitivity to, and therefore different resolving power on, past near-surface thermal conditions. Furthermore, we present the underlying assumptions, and the analytical and numerical methods used to quantify the Ar diffusion kinetics in multi-phase whole-rock analyses that provide these constraints.« less

  7. DOE Zero Energy Ready Home Case Study 2014: Clifton View Homes, Leganza Residence, Greenbank, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Leganza Residence, Greenbank, WA DOE ZERO ENERGY READY HOME(tm) CASE STUDY The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in

  8. DOE Zero Energy Ready Home Case Study 2014: TC Legend Homes, Montlake Modern, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Montlake Modern Seattle, WA DOE ZERO ENERGY READY HOME(tm) CASE STUDY The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to

  9. DOE Zero Ready Home Case Study: Clifton View Homes, Kaltenbach Residence, Clinton, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Kaltenbach Residence, Clinton, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give

  10. DOE Zero Ready Home Case Study: TC Legend Homes, Cedarwood, Bellingham, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cedarwood Bellingham, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give you

  11. MEIS1 functions as a potential AR negative regulator

    SciTech Connect (OSTI)

    Cui, Liang; Yang, Yutao; Hang, Xingyi; Cui, Jiajun; Gao, Jiangping

    2014-10-15

    The androgen receptor (AR) plays critical roles in human prostate carcinoma progression and transformation. However, the activation of AR is regulated by co-regulators. MEIS1 protein, the homeodomain transcription factor, exhibited a decreased level in poor-prognosis prostate tumors. In this study, we investigated a potential interaction between MEIS1 and AR. We found that overexpression of MEIS1 inhibited the AR transcriptional activity and reduced the expression of AR target gene. A potential proteinprotein interaction between AR and MEIS1 was identified by the immunoprecipitation and GST pull-down assays. Furthermore, MEIS1 modulated AR cytoplasm/nucleus translocation and the recruitment to androgen response element in prostate specific antigen (PSA) gene promoter sequences. In addition, MEIS1 promoted the recruitment of NCoR and SMRT in the presence of R1881. Finally, MEIS1 inhibited the proliferation and anchor-independent growth of LNCaP cells. Taken together, our data suggests that MEIS1 functions as a novel AR co-repressor. - Highlights: A potential interaction was identified between MEIS1 and AR signaling. Overexpression of MEIS1 reduced the expression of AR target gene. MEIS1 modulated AR cytoplasm/nucleus translocation. MEIS1 inhibited the proliferation and anchor-independent growth of LNCaP cells.

  12. http://www.ars.usda.gov/research/publications/Publications.htm...

    National Nuclear Security Administration (NNSA)

    - Ed Wagner, Larry Tatarko, John Publications Publications Related National Programs Air Quality (203) Soil Resource Management (202) Page 1 of 2 ARS | Publication request:...

  13. Bimodal Energy Distributions in the Scattering of Ar+ Ions from...

    Office of Scientific and Technical Information (OSTI)

    Bimodal Energy Distributions in the Scattering of Ar+ Ions from Modified Surfaces at Hyperthermal Energies Citation Details In-Document Search Title: Bimodal Energy Distributions ...

  14. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  15. Measurements of Turbulence at Two Tidal Energy Sites in Puget Sound, WA

    SciTech Connect (OSTI)

    Thomson, Jim; Polagye, Brian; Durgesh, Vibhav; Richmond, Marshall C.

    2012-06-05

    Field measurements of turbulence are pre- sented from two sites in Puget Sound, WA (USA) that are proposed for electrical power generation using tidal current turbines. Rapidly sampled data from multiple acoustic Doppler instruments are analyzed to obtain statistical mea- sures of fluctuations in both the magnitude and direction of the tidal currents. The resulting turbulence intensities (i.e., the turbulent velocity fluctuations normalized by the harmonic tidal currents) are typically 10% at the hub- heights (i.e., the relevant depth bin) of the proposed turbines. Length and time scales of the turbulence are also analyzed. Large-scale, anisotropic eddies dominate the energy spectra, which may be the result of proximity to headlands at each site. At small scales, an isotropic turbulent cascade is observed and used to estimate the dissipation rate of turbulent kinetic energy. Data quality and sampling parameters are discussed, with an emphasis on the removal of Doppler noise from turbulence statistics.

  16. Method of plasma etching Ga-based compound semiconductors

    SciTech Connect (OSTI)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  17. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  18. Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

    SciTech Connect (OSTI)

    Cullis, A.G.; Chew, N.G.; Whitehouse, C.R. ); Jacobson, D.C.; Poate, J.M.; Pearton, S.J.

    1989-09-18

    When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

  19. Ars Technica Visits GE's China Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ars Technica visits GE's China Technology Center Ars Technica visited GE's China Technology Center in Shanghai to discover what type of research is being conducted at the facility. The visit was a part of Ars Technica's Chasing

  20. EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX

    Broader source: Energy.gov [DOE]

    This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

  1. Origin State>> CA ID ID ID IL KY NV NY NY OH TN TN TN, WA, CA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NV NY NY OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Advanced Mixed Waste Treatment Project Batelle Energy Alliance Idaho National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant National Security Technologies Brookhaven National Laboratory West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation

  2. Origin State>> CA ID ID ID IL MD NM NM NY OH TN TN TN, WA, CA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NY OH TN TN TN, WA, CA TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Aberdeen Proving Ground Sandia National Laboratory Los Alamos National Laboratory Brookhaven National Laboratory Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation (M&EC) Perma-Fix

  3. Origin State>> CA ID ID ID IL NM NM OH TN TN TN, WA, CA TN TN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NM NM OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Sandia National Laboratory Los Alamos National Laboratory Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation (M&EC) Perma-Fix Nuclear Fuels Services Wastren Advantage, Inc.

  4. Origin State>> CA ID ID IL IL KY NM NM NV NY OH TN TN TN, WA,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IL IL KY NM NM NV NY OH TN TN TN, WA, CA TN TN TN TN Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Energx Argonne National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant Sandia National Laboratory Los Alamos National Laboratory National Security Technologies West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant

  5. ARS 41-1072 Licensing Time Frames | Open Energy Information

    Open Energy Info (EERE)

    1-1072 Licensing Time Frames Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS 41-1072 Licensing Time FramesLegal Abstract...

  6. A.R.S. 11-804 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 11-804Legal Abstract This section authorizes counties to develop and adopt...

  7. A.R.S. 41-841 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 41-841Legal Abstract Archaeological Discoveries Published NA Year Signed or Took...

  8. A.R.S. 41-842 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 41-842Legal Abstract Discusses the requirement of prior authorization in order to...

  9. A.R.S. 41-861 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 41-861Legal Abstract This section discusses agency responsibility for the...

  10. A.R.S. 41-843 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 41-843Legal Abstract Prohibits the unnecessary defacing of an archaeological and...

  11. 49 A.R.S. 201: Definitions | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: 49 A.R.S. 201: DefinitionsLegal Abstract This section contains definitions that relate to water...

  12. A.R.S. 11-811 | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 11-811Legal Abstract This section authorizes counties to adopt zoning ordinances....

  13. ARS 40 - Public Utilities and Carriers | Open Energy Information

    Open Energy Info (EERE)

    StatuteStatute: ARS 40 - Public Utilities and CarriersLegal Abstract This title sets forth the statutes for public utilities and carriers in Arizona. Published NA Year Signed...

  14. Xe and Ar nanobubbles in Al studied by photoemission spectroscopy...

    Office of Scientific and Technical Information (OSTI)

    Xe and Ar bombardment is observed by low energy electron diffraction, but this does not ... Road, Indore 452001, Madhya Pradesh (India) (India) Publication Date: 2008-03-01 OSTI ...

  15. ARS 41-1092 Uniform Administrative Hearing Procedures | Open...

    Open Energy Info (EERE)

    92 Uniform Administrative Hearing Procedures Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS 41-1092 Uniform Administrative...

  16. Combined U-Th/He and 40Ar/39Ar geochronology of post-shield lavas from the Mauna Kea and Kohala volcanoes, Hawaii

    SciTech Connect (OSTI)

    Aciego, S.M.; Jourdan, F.; DePaolo, D.J.; Kennedy, B.M.; Renne, P.R.; Sims, K.W.W.

    2009-10-01

    Late Quaternary, post-shield lavas from the Mauna Kea and Kohala volcanoes on the Big Island of Hawaii have been dated using the {sup 40}Ar/{sup 39}Ar and U-Th/He methods. The objective of the study is to compare the recently demonstrated U-Th/He age method, which uses basaltic olivine phenocrysts, with {sup 40}Ar/{sup 39}Ar ages measured on groundmass from the same samples. As a corollary, the age data also increase the precision of the chronology of volcanism on the Big Island. For the U-Th/He ages, U, Th and He concentrations and isotopes were measured to account for U-series disequilibrium and initial He. Single analyses U-Th/He ages for Hamakua lavas from Mauna Kea are 87 {+-} 40 ka to 119 {+-} 23 ka (2{sigma} uncertainties), which are in general equal to or younger than {sup 40}Ar/{sup 39}Ar ages. Basalt from the Polulu sequence on Kohala gives a U-Th/He age of 354 {+-} 54 ka and a {sup 40}Ar/{sup 39}Ar age of 450 {+-} 40 ka. All of the U-Th/He ages, and all but one spurious {sup 40}Ar/{sup 39}Ar ages conform to the previously proposed stratigraphy and published {sup 14}C and K-Ar ages. The ages also compare favorably to U-Th whole rock-olivine ages calculated from {sup 238}U - {sup 230}Th disequilibria. The U-Th/He and {sup 40}Ar/{sup 39}Ar results agree best where there is a relatively large amount of radiogenic {sup 40}Ar (>10%), and where the {sup 40}Ar/{sup 36}Ar intercept calculated from the Ar isochron diagram is close to the atmospheric value. In two cases, it is not clear why U-Th/He and {sup 40}Ar/{sup 39}Ar ages do not agree within uncertainty. U-Th/He and {sup 40}Ar/{sup 39}Ar results diverge the most on a low-K transitional tholeiitic basalt with abundant olivine. For the most alkalic basalts with negligible olivine phenocrysts, U-Th/He ages were unattainable while {sup 40}Ar/{sup 39}Ar results provide good precision even on ages as low as 19 {+-} 4 ka. Hence, the strengths and weaknesses of the U-Th/He and {sup 40}Ar/{sup 39}Ar methods are

  17. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  18. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  19. HIA 2015 DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham Power House, Bellingham, WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bellingham Power House Bellingham, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to

  20. Analyses of soils at commercial radioactive-waste-disposal sites. [Barnwell, SC; Richland, WA

    SciTech Connect (OSTI)

    Piciulo, P.L.; Shea, C.E.; Barletta, R.E.

    1982-01-01

    Brookhaven National Laboratory, in order to provide technical assistance to the NRC, has measured a number of physical and chemical characteristics of soils from two currently operating commercial radioactive waste disposal sites; one at Barnwell, SC, and the other near Richland, WA. Soil samples believed to be representative of the soil that will contact the buried waste were collected and analyzed. Earth resistivities (field measurements), from both sites, supply information to identify variations in subsurface material. Barnwell soil resistivities (laboratory measurements) range from 3.6 x 10/sup 5/ ohm-cm to 8.9 x 10/sup 4/ ohm-cm. Soil resistivities of the Hanford sample vary from 3.0 x 10/sup 5/ ohm-cm to 6.6 x 10/sup 3/ ohm-cm. The Barnwell and Hanford soil pH ranges from 4.8 to 5.4 and from 4.0 to 7.2 respectively. The pH of a 1:2 mixture of soil to 0.01 M CaCl/sub 2/ resulted in a pH for the Barnwell samples of 3.9 +- 0.1 and for the Hanford samples of 7.4 +- 0.2. These values are comparable to the pH measurements of the water extract of the soils used for the analyses of soluble ion content of the soils. The exchange acidity of the soils was found to be approximately 7 mg-eq per 100 g of dry soil for clay material from Barnwell, whereas the Hanford soils showed an alkaline reaction. Aqueous extracts of saturated pastes were used to determine the concentrations of the following ions: Ca/sup 2 +/, Mg/sup 2 +/, K/sup +/, Na/sup +/, HCO/sub 3//sup -/, SO/sub 4//sup =/, and Cl/sup -/. The sulfide content of each of the soils was measured in a 1:2.5 mixture of soil to an antioxidant buffer solution. The concentrations of soluble ions found in the soils from both sites are consistent with the high resistivities.

  1. Interatomic scattering in energy dependent photoelectron spectra of Ar clusters

    SciTech Connect (OSTI)

    Patanen, M.; Benkoula, S.; Nicolas, C.; Goel, A.; Antonsson, E.; Neville, J. J.; Miron, C.

    2015-09-28

    Soft X-ray photoelectron spectra of Ar 2p levels of atomic argon and argon clusters are recorded over an extended range of photon energies. The Ar 2p intensity ratios between atomic argon and clusters’ surface and bulk components reveal oscillations similar to photoelectron extended X-ray absorption fine structure signal (PEXAFS). We demonstrate here that this technique allows us to analyze separately the PEXAFS signals from surface and bulk sites of free-standing, neutral clusters, revealing a bond contraction at the surface.

  2. Alexis A. Aguilar-Arévalo Columbia University

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the NuMI beam line in the MiniBooNE detector Alexis A. Aguilar-Arévalo Columbia University for the MiniBooNE/MINOS Collaborations Alexis A. Aguilar-Arévalo PANIC 2005 Santa Fe, New Mexico October 24, 2005 October 24, 2005 PANIC The NuMI beam line - NuMI beam: provides neutrinos for the MINOS experiment studying neutrino oscillations in the atmospheric oscillations regime (Super-K). - Other experiments will be users of this beam line (NOνA, MINERvA). MiniBooNE is "on the way" of NuMI

  3. New Rydberg-Rydberg transitions of the ArH and ArD molecules: Bands involving the 4f complex of ArD

    SciTech Connect (OSTI)

    Dabrowski, I.; Tokaryk, D.; Watson, J.K.G.; Lipson, R.H.

    1995-12-31

    The 4f {r_arrow} 5s transition of ArD is observed in Ar/D{sub 2} discharges as a band near 4830 {Angstrom}1 (v{sub 00} = 20682 cm{sup -1}) with O, Q and S-form branches. On the basis of a preliminary rotational analysis of this band, the transitions 4f {r_arrow} 3d{sigma}, 4f {r_arrow} 3d{pi}, and 4f {r_arrow} 3d{delta} to the three components of the 3d complex could be assigned to bands at 4371, 7666 and 6045 cm{sup -1}, respectively. These bands give information on components of the 4f complex not seen in the 4f {r_arrow} 5s band. The 4f complex is found to be a good example of Hund`s case (d), with R = 0 splittings that are predominantly of second-rank tensor type with the coefficient of {lambda}{sup 2} equal to 16.5 cm{sup -1}. A number of small perturbations are probably due to vibrational levels of other electronic states, but two larger perturbations near R = 11 and R = 24 are attributed to v = 0 of the 4d{delta} and 4d{sigma} states, respectively. The quantum defects of the 4f and other states will be discussed in terms of the properties of the ArH{sup +} or ArD{sup +} core, including the I-mixing effects of the core electric dipole moment.

  4. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  5. HIA 2015 DOE Zero Energy Ready Home Case Study: Clifton View Homes, Marine Drive and Port Hadlcok, Coupeville and Port Hadlock WA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Homes Marine Drive and Port Hadlock Coupeville, WA Port Hadlock, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced

  6. sup 40 Ar- sup 39 Ar and K-Ar dating of K-rich rocks from the Roccamonfina volcano, Roman Comagmatic Region, Italy

    SciTech Connect (OSTI)

    Di Brozolo, F.R.; Di Girolamo, P.; Turi, B.; Oddone, M. )

    1988-06-01

    Roccamonfina is the northernmost Volcano of the Campanian area of the K-rich Roman comagmatic Region of Italy. It erupted a huge amount of pyroclastics and lavas belonging to both the Leucite-Basanite and Leucitite Series (LBLS) and the Shoshonite Series (SS), spread over an area of about 300 km{sup 2}. The above series correspond to the High-K Series (HKS) and Low-K Series (LKS) of Appleton (1971), respectively. {sup 40}Ar-{sup 39}Ar and K-Ar dating of samples from both series gave ages ranging from 0.656 to 0.096 Ma for the SS and from 1.03( ) to 0.053 Ma for the LBLS. These results indicate that the products of the two series were outpoured together at least between 0.7 and 0.1 Ma age, i.e. during both the so-called pre-caldera phase and the post-caldera phase of activity. The latest products of the volcanism at Roccamonfina were erupted just before the deposition of the Grey Campanian Ignimbrite, which erupted from vents located about 50 km to the south in the Phlegrean Fields near Naples and has an age of about 33,000 years. Taking into account all the available all the available radiometric data the authors conclude that Roccamonfina was active between 1.5 and 0.05 Ma ago, in excellent agreement with the stratigraphic evidence. In this same time span is concentrated the activity of all the centers of the Roman Region north of Naples.

  7. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  8. 41 A.R.S. 1092 et seq.: Uniform Administrative Hearing Procedures...

    Open Energy Info (EERE)

    A.R.S. 1092 et seq.: Uniform Administrative Hearing Procedures Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: 41 A.R.S. 1092 et...

  9. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H

    SciTech Connect (OSTI)

    Look, David; Droubay, Timothy C.; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

    2011-01-11

    Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

  10. Evaluation of contaminant flux rates from sediments of Sinclair Inlet, WA, using a benthic flux sampling device. Final report

    SciTech Connect (OSTI)

    Chadwick, D.B.; Lieberman, S.H.; Reimers, C.E.; Young, D.

    1993-02-01

    A Benthic Flux Sampling Device (BFSD) was demonstrated on site to determine the mobility of contaminants in sediments off the Puget Sound Naval Shipyard (PSNS) in Sinclair Inlet, WA. Quantification of toxicant flux from the sediments will support ongoing assessment studies and facilitate the design of appropriate remediation strategies, if required. In general, where release of contaminants was found, the measured rates do not represent a significant source relative to other major inputs such as sewer discharges, nonpoint source runoff, and marinas. They may, however, represent an exposure pathway for benthic biota with a subsequent potential for toxicological effects and/or bioaccumulation. Environmental assessment, CIVAPP:Toxicity, CIVAPP:Marine chemistry, Hazardous waste.

  11. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  12. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  13. High resolution rotational spectroscopy of weakly bound ionic clusters: ArH/sub 3//sup +/, ArD/sub 3//sup +/

    SciTech Connect (OSTI)

    Bogey, M.; Bolvin, H.; Demuynck, C.; Destombes, J.L.

    1987-03-09

    The first high-resolution study of weakly bound cluster ions is reported. The millimeter- and submillimeter-wave rotational spectra of ArH/sub 3/ /sup +/ and ArD/sub 3/ /sup +/ have been observed in a magnetically confined, liquid-nitrogen--cooled glow discharge and a partial molecular structure has been derived from their analysis. ArH/sub 3/ /sup +/ appears to be planar, with the Ar atom lying on a symmetry axis of the H/sub 3/ /sup +/ equilateral triangle, 2.38 A from the H/sub 3/ /sup +/ centroid. SPlitting of some of the lines is strong evidence for tunneling motion.

  14. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  15. The effect of the nature of a modifying additive (Pt, Zn, Ga) on the activity of oxide and zeolite catalysts in ethane dehydrogenation and aromatization

    SciTech Connect (OSTI)

    Vasina, T.V.; Masloboyshchikova, O.V.; Chetina, O.V.

    1994-10-01

    The catalytic properties of Pt, Zn, and Ga deposited on supports of various natures (Al{sub 2}O{sub 3}, SiO{sub 2}, NaZSM, and HZSM) in the dehydrogenation and aromatization of ethane were investigated. Pt-containing catalysts are the most active in the conversion of ethane: the selectivity with respect to ethylene is 25-87% depending on the nature of the support. In the presence of Zn- and Ga-containing catalysts the yield of ethylene is 2-3 times lower than with Pt-catalysts. With HZSM modified by Pt, Zn, or Ga aromatic hydrocarbons (ArH) and methane are the main products of ethane transformation. Ga/HZSM is the most efficient catalyst of the aromatization of ethane under the conditions studied (550 {degrees}C, 120 h{sup -1}).

  16. Dusty Plasma in He-Ar Glow Discharge

    SciTech Connect (OSTI)

    Maiorov, S. A.; Ramazanov, T. S.; Dzhumagulova, K. N.; Dosbolayev, M. K.; Jumabekov, A. N.

    2008-09-07

    The paper reports on the first experiments with plasma-dust formations in dc gas discharge plasma for He-Ar mixture. It is shown that under the conventional conditions of the experiments with dusty structures in plasma, the choice of light and heavy gases for the mixture suppresses electron heating in electric field and results in a supersonic jet with high Mach numbers. Distribution functions for drifting ions in the gas mixture are calculated for various mixture concentrations, electric field strengths and gas pressures.

  17. Annual Energy Outlook 2015 - Appendix F

    Gasoline and Diesel Fuel Update (EIA)

    7 U.S. Energy Information Administration | Annual Energy Outlook 2015 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY ...

  18. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  19. Wa s h i n g t o n U n i v e r s i t y i n S t . L o...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wa s h i n g t o n U n i v e r s i t y i n S t . L o u i s - - P A R C ' s H o s t & A d mi n s t r a t i v e H o me - B o b B l a n k e n s h i p , P A R C D i r e c t o r - D e ...

  20. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  3. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  4. A=19N (1972AJ02)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2AJ02) (Not illustrated) 19N has been observed in the 3 GeV proton bombardment of a 197Au target: it is particle stable (1968TH04). See also (1969AR13, 1970AR1D). The mass excess of 19N is 15.01 < (M - A) < 18.68 MeV (1970WA1G). See also (1960ZE03, 1961BA1C, 1962GO1B, 1966GA25, 1969ST07

  5. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  6. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  7. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  8. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  9. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  10. Uv-preionized ArF and KrF excimer lasers

    SciTech Connect (OSTI)

    Cheng, S.; Cailai, Y.; Alrong, Y.C.D.

    1981-11-01

    Experimental investigations of UV-preionized ArF and KrF excimer lasers are reported. The output laser energies of 105 mJ for ArF and 185 mJ for KrF are obtained. Effects of various parameters on the laser characteristics are discussed.

  11. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  12. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  13. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  14. NEW ACCURATE MEASUREMENT OF {sup 36}ArH{sup +} AND {sup 38}ArH{sup +} RO-VIBRATIONAL TRANSITIONS BY HIGH RESOLUTION IR ABSORPTION SPECTROSCOPY

    SciTech Connect (OSTI)

    Cueto, M.; Herrero, V. J.; Tanarro, I.; Doménech, J. L.; Cernicharo, J.; Barlow, M. J.; Swinyard, B. M.

    2014-03-01

    The protonated argon ion, {sup 36}ArH{sup +}, was recently identified in the Crab Nebula from Herschel spectra. Given the atmospheric opacity at the frequency of its J = 1-0 and J = 2-1 rotational transitions (617.5 and 1234.6 GHz, respectively), and the current lack of appropriate space observatories after the recent end of the Herschel mission, future studies on this molecule will rely on mid-infrared observations. We report on accurate wavenumber measurements of {sup 36}ArH{sup +} and {sup 38}ArH{sup +} rotation-vibration transitions in the v = 1-0 band in the range 4.1-3.7 μm (2450-2715 cm{sup –1}). The wavenumbers of the R(0) transitions of the v = 1-0 band are 2612.50135 ± 0.00033 and 2610.70177 ± 0.00042 cm{sup –1} (±3σ) for {sup 36}ArH{sup +} and {sup 38}ArH{sup +}, respectively. The calculated opacity for a gas thermalized at a temperature of 100 K and with a linewidth of 1 km s{sup –1} of the R(0) line is 1.6 × 10{sup –15} × N({sup 36}ArH{sup +}). For column densities of {sup 36}ArH{sup +} larger than 1 × 10{sup 13} cm{sup –2}, significant absorption by the R(0) line can be expected against bright mid-IR sources.

  15. Geochronology of the Porgera gold deposit, Papua New Guinea: Resolving the effects of excess argon on K-Ar and sup 40 Ar/ sup 39 Ar age estimates for magmatism and mineralization

    SciTech Connect (OSTI)

    Richards, J.P.; McDougall, I. )

    1990-05-01

    Mesothermal/epithermal gold mineralization at Porgera in the highlands of Papua New Guinea (PNG), occurs in structurally controlled veins and disseminations, which overprint and cross-cut a suite of shallow-level, comagmatic, mafic alkaline stocks and dykes and their sedimentary host rocks. Conventional K-Ar apparent ages of twelve hornblende separates from eight different intrusions scatter between 7 and 14 Ma, but four biotite separates are concordant at 6.02 {plus minus} 0.29 Ma (2{sigma}). {sup 40}Ar/{sup 39}Ar step-heating experiments on six of the hornblende separates reveal saddle-shaped age spectra, which indicate the presence of excess {sup 40}Ar. One of these samples yields a well-defined plateau with an apparent age of 5.96 {plus minus} 0.25 Ma (2{sigma}). Conventional K-Ar analyses of six separates of hydrothermal illite and roscoelite associated with gold mineralization yield apparent ages of between 5.1 and 6.1 Ma and indicate that ore deposition occurred within 1 Ma of magmatism at Porgera. Evidence for the evolution of a magmatic volatile phase, and the presence of excess {sup 40}Ar both in the intrusives and in hydrothermal fluids associated with the orebody, suggest that magmatic fluids may have had some involvement in metallogenesis, but the exact nature of this involvement is not yet clear. Late Miocene magmatism and mineralization at Porgera are thought to have occurred shortly prior to or during the initiation of continent/arc collision and to pre-date associated Pliocene uplift and foreland deformation in the highlands.

  16. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  17. Wa s h i n g t o n Ma r r i o t t e n Me t r o C e...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wa s h i n g t o n Ma r r i o t t e n Me t r o C e n t e r C o n f e r e n c i a y P r o g r a ma d e C a p a c i t a c i n d e J u s t i c i a A mb i e n t a l N a c i o n a l ...

  18. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  19. Franklin PUD, Pasco WA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    have been replaced by Hans Berg (State of Washington, Wid Ritchie (Idaho Falls) and Shawn Collins (The Energy Project). A few participants reported new LIEE activities, due at...

  20. New Rydberg-Rydberg transitions of the ArH and ArD molecules: Bands involving s, p and d electronic states

    SciTech Connect (OSTI)

    Darbrowski, I.; Tokaryk, D.; Watson, J.K.G.

    1995-12-31

    8The previous analyses of the spectra of ArH and ArD are extended to other transitions between s, p and d complexes, using a case (d) Hamiltonian in which the rotational and centrifugal energies are expressed in powers of R{sup 2}. While l is not a perfect quantum number, it provides convenient labels for the states. The present analysis of bands involving the lowest bound state (5s) is restricted to ArD because the corresponding state of ArH is strongly predissociated. The bands 5p {r_arrow} 5s and 6p {r_arrow} 5s have been observed, but analysis of the former is hampered by interference by D{sub 3} emission. These bands show that the small {sigma} - {pi} separation found in the 4p complex is accidental. For example, 6p{sigma} - 6p{pi} is 69.9 cm{sup -1} (from the R = 0 Hamiltonian), whereas the corresponding separation in 4p is 2.0 cm{sup -1}. Observation of the 3d{delta} {r_arrow} 4p band completes the 3d complex, whose wide splitting ({sigma}, {pi} and {delta} components at 16311, 13016, and 14637 m{sup -1} relative to 5s in ArD) corresponds to an almost pure fourth-rank tensor pattern. The bands 6s {r_arrow} 4p and 8s {r_arrow} 4p have also been analysed.

  1. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  2. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  3. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Nonadiabatic molecular collisions. II. A further trajectory-surface-hopping study of the ArH2(+) system

    SciTech Connect (OSTI)

    Chapman, S.

    1985-05-01

    The nonadiabatic molecular processes of charge exchange and chemical reaction in the species Ar(+) + H2, Ar + H2(+), and Ar + D2(+) are characterized theoretically in three-dimensional space using the trajectory-surface-hopping model of Tully and Preston (1971) and the diatomics-in-molecules hypersurfaces of Kuntz and Roach (1972). The results are presented in tables, graphs, and diagrams and shown to be in good general agreement with experimental data. Findings reported include the direct nature of the reactions, the stripping process involved in the reaction Ar(+) + H2 yields ArH(+) + H, the high rotational temperature of the product ArH(+), and the sensitive dependence of Ar + H2(+) and Ar + D2(+) cross sections on the vibrational state of the reactants. 38 references.

  5. GAS AND DUST ABSORPTION IN THE DoAr 24E SYSTEM

    SciTech Connect (OSTI)

    Kruger, Andrew J.; Richter, Matthew J.; Seifahrt, Andreas; Carr, John S.; Najita, Joan R.; Moerchen, Margaret M.; Doppmann, Greg W.

    2012-11-20

    We present findings for DoAr 24E, a binary system that includes a classical infrared companion. We observed the DoAr 24E system with the Spitzer Infrared Spectrograph (IRS), with high-resolution, near-infrared spectroscopy of CO vibrational transitions, and with mid-infrared imaging. The source of high extinction toward infrared companions has been an item of continuing interest. Here we investigate the disk structure of DoAr 24E using the column densities, temperature, and velocity profiles of two CO absorption features seen toward DoAr 24Eb. We model the spectral energy distributions found using T-ReCS imaging and investigate the likely sources of extinction toward DoAr 24Eb. We find the lack of silicate absorption and small CO column density toward DoAr 24Eb suggest that the mid-infrared continuum is not as extinguished as the near-infrared, possibly due to the mid-infrared originating from an extended region. This, along with the velocity profile of the CO absorption, suggests that the source of high extinction is likely due to a disk or disk wind associated with DoAr 24Eb.

  6. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  7. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  8. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  9. Ars Technica: Finding Smart Ways to Build Smart Things | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Finding Smart Ways to Build Smart Things Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ars Technica: Finding Smart Ways to Build Smart Things Ars Technica visited GE's Global Research Center in Munich to discover the innovative research being done at the facility. Watch a video of Ars Technica's visit below: You Might

  10. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  11. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  12. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  14. A.R.S. 37-102: State Land Department - Powers and Duties ...

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 37-102: State Land Department - Powers and DutiesLegal Abstract This section...

  15. 49 A.R.S. 255 et seq.: Arizona Pollutant Discharge Elimination...

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: 49 A.R.S. 255 et seq.: Arizona Pollutant Discharge Elimination System ProgramLegal Abstract...

  16. 49 A.R.S. 321 et seq.: Water Quality Appeals | Open Energy Information

    Open Energy Info (EERE)

    search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: 49 A.R.S. 321 et seq.: Water Quality AppealsLegal Abstract This section governs appeals to the...

  17. ARS Title 49-200 Water Quality Control | Open Energy Information

    Open Energy Info (EERE)

    -200 Water Quality Control Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS Title 49-200 Water Quality ControlLegal Abstract...

  18. Experimental study of the beta-delayed proton precursors /sup 33/Ar and /sup 49/Fe

    SciTech Connect (OSTI)

    XU Xiao-ji; GUO Jun-sheng; GUO Ying-xiang; ZHAO Zhi-zheng; LUO Yi-xiao

    1985-01-01

    Beta-delayed proton precursors /sup 33/Ar and /sup 49/Fe have been produced via the (/sup 12/C,3n) reaction in 65-MeV carbon bombardments of /sup 24/Mg and /sup 40/Ca, respectively. The major proton peaks are at 3.28 +- 0.07 MeV for /sup 33/Ar and 1.98 +- 0.04 MeV for /sup 49/Fe. The corresponding cross section for /sup 33/Ar is 0.40 +- 0.08 ..mu..b, and for /sup 49/Fe 0.70 +- 0.14 ..mu..b. The half-life of /sup 33/Ar was determined to be 167 +- 24 ms.

  19. File:NREL-ar-80m.pdf | Open Energy Information

    Open Energy Info (EERE)

    File Edit with form History File:NREL-ar-80m.pdf Jump to: navigation, search File File history File usage Arkansas Annual Average Wind Speed at 80 Meters Size of this preview: 463...

  20. Title 32 CFR 651 Environmental Analysis of Army Actions (AR 200...

    Open Energy Info (EERE)

    of Army Actions (AR 200-2) Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- Federal RegulationFederal Regulation: Title 32 CFR 651...

  1. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  2. Ion chemistry in H{sub 2}-Ar low temperature plasmas

    SciTech Connect (OSTI)

    Sode, M.; Schwarz-Selinger, T.; Jacob, W.

    2013-08-14

    A rate equation model is devised to study the ion composition of inductively coupled H{sub 2}-Ar plasmas with different H{sub 2}-Ar mixing ratios. The model is applied to calculate the ion densities n{sub i}, the wall loss probability of atomic hydrogen β{sub H}, and the electron temperature T{sub e}. The calculated n{sub i}'s of Ar{sup +}, H{sup +}, H{sub 2}{sup +}, H{sub 3}{sup +}, and ArH{sup +} are compared with experimental results. Calculations were made for a total gas pressure of 1.0 Pa. The production and loss channels of all ions are presented and discussed in detail. With the production and loss rates, the density dependence of each ion on the plasma parameters is explained. It is shown that the primary ions H{sub 2}{sup +} and Ar{sup +} which are produced by ionization of the background gas by electron collisions are effectively converted into H{sub 3}{sup +} and ArH{sup +}. The high density of ArH{sup +} and Ar{sup +} is attributed to the low loss to the walls compared to hydrogen ions. It is shown that the H{sup +}/H{sub 2}{sup +} density ratio is strongly correlated to the H/H{sub 2} density ratio. The dissociation degree is around 1.7%. From matching the calculated to the measured atomic hydrogen density n{sub H}, the wall loss probability of atomic hydrogen on stainless steel β{sub H} was determined to be β{sub H}=0.24. The model results were compared with recently published experimental results. The calculated and experimentally obtained data are in fair agreement.

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. Hanford Site's Data Packages in the Administrative Record (AR) and Public Information Repository (PIR)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    In 1989, the Department of Energy joined with the Washington State Department of Ecology and the U.S. Environmental Protection Agency in signing the Hanford Federal Facility Agreement and Consent Order more commonly known as the Tri-Party Agreement (TPA). The TPA outlines legally enforceable milestones for Hanford cleanup over the next several decades. The AR is the body of documents and information that is considered or relied upon to arrive at a final decision for remedial action or hazardous waste management. An AR is established for each operable unit (OU); treatment, storage, or disposal unit (TSD); or Expedited Response Action (ERA) group and will contain all documents having information considered in arriving at a Record of Decision or permit. Documents become part of the AR after they have been designated as an AR by the TPA or after EPA, DOE, or other official parties have identified a document or set of documents for inclusion. Furthermore, AR documents are to be kept in a Public Information Repository (PIR).Thousands of data packages that support the AR documents are available to the public in the Hanford PIR.

  5. Theoretical potential curves for excited states of ArH and the rate of collisional quenching of metastable Ar by H

    SciTech Connect (OSTI)

    Vance, R.L.; Gallup, G.A.

    1980-07-15

    Energy curves for the ground state and the first seven excited states of ArH have been calculated using the multiconfiguration valence bond (MCVB) method. Important features of the excited curves include two distinct avoided crossings between the lowest Ar*H and the highest ArH* potential energy curves. Using these curves we have made a theoretical analysis of quenching of metastable Ar by collision with H at room temperature. Application of the Massey criterion indicates that the separation of the potential curves in the region of the crossing and the acceleration produced by the fall of the reactant channel potential curve from its asymptotic level combine to produce a relatively high probability for curve switching. A more quantitative estimate of the curve switching probability is given with the Landau--Zener formula and leads to a theoretical value of the quenching rate approximately ten times the experimental. In light of the many approximations involved this qualitative agreement is satisfactory and provides a rationale to explain the anomalously high rate constant for the quenching reaction. Structural features of the interacting potential curves are discussed in terms of the diabatic states involved.

  6. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  7. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  8. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  9. Density Profiles in Sputtered Molybdenum Thin Films and Their Effects on Sodium Diffusion in Cu(InxGa1-x)Se2 Photovoltaics

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Mansfield, L.; Young, M.; Yan, Y.; Contreras, M.; Noufi, R.; Terry Jr., F. L.; Levi, D.

    2011-01-01

    Molybdenum (Mo) thin films were sputtered onto soda lime glass (SLG) substrates. The main variable in the deposition parameters, the argon (Ar) pressure p{sub Ar}, was varied in the range of 6-20 mTorr. Ex situ spectroscopic ellipsometry (SE) was performed to find out that the dielectric functions {var_epsilon} of the Mo films were strongly dependent on p{sub Ar}, indicating a consistent and significant decrease in the Mo film density {rho}{sub Mo} with increasing p{sub Ar}. This trend was confirmed by high-angle-annular-dark-field scanning transmission electron microscopy. {var_epsilon} of Mo was then found to be correlated with secondary ion mass spectroscopy profiles of Sodium (Na) in the Cu(In{sub x}Ga{sub 1-x})Se{sub 2} (CIGS) layer grown on top of Mo/SLG. Therefore, in situ optical diagnostics can be applied for process monitoring and optimization in the deposition of Mo for CIGS solar cells. Such capability is demonstrated with simulated optical transmission and reflectance of variously polarized incident light, using {var_epsilon} deduced from SE.

  10. Theoretical study of Al{sub n}V{sup +} clusters and their interaction with Ar

    SciTech Connect (OSTI)

    Fernndez, Eva Mara; Vega, Andrs; Balbs, Luis Carlos

    2013-12-07

    Recently, it has been experimentally elucidated whether a V impurity in Al{sub n}V{sup +} clusters occupies an external or an internal site by studying their interaction with argon as a function of cluster size [S. M. Lang, P. Claes, S. Neukermans, and E. Janssens, J. Am. Soc. Mass Spectrom. 22, 1508 (2011)]. In the work presented here we studied, by means of density functional theoretic calculations, the structural and electronic properties of Al{sub n}V{sup +} clusters with n = 1421 atoms, as well as the adsorption of a single Ar atom on them. For n < 17 the lowest energy structure of Al{sub n}V{sup +} is related to that of the pure Al {sub n+1}{sup +} cluster with the V atom substituting a surface Al atom. For n ? 17 the V impurity becomes embedded in the cluster, in agreement with the experimental results, and the clusters adopt a fcc-like structure instead of the icosahedral-like skeleton of pure Al {sub n+1}{sup +}. We have studied the binding energy per atom, the second energy difference, and the V and Al atom separation energies, in comparison with those of pure Al {sub n+1}{sup +}. We also studied the adsorption of atomic Ar on endohedral and exohedral V doped clusters. The optimized Ar adsorption geometries are formed with Ar on top of a surface atom (V for n < 17, and Al for n ? 17) without noticeable structural distortion of the host cluster. At the critical size (n = 17) of the exohedral-endohedral transition, the calculated Ar adsorption energy exhibits a drop and the Ar-cluster distance increases drastically, indicating that Ar becomes physisorbed rather than chemisorbed. All these results confirm the assumptions made by the experimentalists when interpreting their measurements.

  11. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  12. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  13. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  14. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  15. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  16. Simulation of an Ar/NH{sub 3} low pressure magnetized direct current discharge

    SciTech Connect (OSTI)

    Li Zhi [School of Science, University of Science and Technology Liaoning, Anshan 114051 (China); School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao Zhen [School of Chemistry and Life Science, Anshan Normal University, Anshan 114007 (China); School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Li Xuehui [Physiccal Science and Technical College, Dalian University, Dalian 116622 (China)

    2013-01-15

    A two-dimensional fluid model has been used to investigate the properties of plasma in an Ar/NH{sub 3} low pressure magnetized direct current discharge. We compared the simulation results with the theoretical and experimental results of the other gas discharge in which the magnetic field is considered. Results that obtained using this method are in good agreement with literature. The simulation results show that the positive ammonia ion density follows the positive argon ion density. The Ar{sub 2}{sup +} density is slightly higher than the Ar{sup +} density at 100 mTorr. The largest ammonia ion is NH{sub 3}{sup +} ion, followed by NH{sub 2}{sup +}, NH{sub 4}{sup +}, and NH{sup +} ions. The contribution of NH{sup +} ions to the density of the positive ammonia ions is marginal. The influence of pressure on the plasma discharge has been studied by simulation, and the mechanisms have been discussed. The average plasma density increases as pressure increased. The plasma density appears to be more inhomogeneous than that at the lower pressure. The ratio of charge particles changed as pressure increased. The Ar{sup +} density is slightly higher than the Ar{sub 2}{sup +} density as the pressure increased. It makes NH{sub 4}{sup +} ratio increase as pressure increased. It shows that the electron temperature drops with rising pressure by numerical calculation.

  17. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  18. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  19. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  20. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  1. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  2. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  3. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  4. Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

    SciTech Connect (OSTI)

    Schmidt, S.; Greczynski, G.; Jensen, J.; Hultman, L.; Czigany, Zs.

    2012-07-01

    Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies. Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

  5. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  6. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  7. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore »critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  8. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  9. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  10. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  11. HIGH-RESOLUTION FOURIER TRANSFORM SPECTROSCOPY OF LANTHANUM IN Ar DISCHARGE IN THE NEAR-INFRARED

    SciTech Connect (OSTI)

    Güzelçimen, F.; Başar, Gö.; Tamanis, M.; Kruzins, A.; Ferber, R.; Windholz, L.; Kröger, S. E-mail: sophie.kroeger@htw-berlin.de

    2013-10-01

    A high-resolution spectrum of lanthanum has been recorded by a Fourier Transform spectrometer in the wavelength range from 833 nm to 1666 nm (6000 cm{sup –1} to 12,000 cm{sup –1}) using as light source a hollow cathode lamp operated with argon as the discharge carrier gas. In total, 2386 spectral lines were detected in this region, of which 555 lines could be classified as La I transitions and 10 lines as La II transitions. All La II transitions and 534 of these La I transitions were classified for the first time, and 6 of the La II transitions and 433 of the classified La I transitions appear to be new lines, which could not be found in the literature. The corresponding energy level data of classified lines are given. Additionally, 430 lines are assigned as Ar I lines and 394 as Ar II lines, of which 179 and 77, respectively, were classified for the first time. All 77 classified Ar II transitions as well as 159 of the classified Ar I transitions are new lines. Furthermore, the wavenumbers of 997 unclassified spectral lines were determined, 235 of which could be assigned as La lines, because of their hyperfine pattern. The remaining 762 lines may be either unclassified Ar lines or unresolved and unclassified La lines with only one symmetrical peak with an FWHM in the same order of magnitude as the Ar lines. The accuracy of the wavenumber for the classified lines with signal-to-noise-ratio higher than four is better than 0.006 cm{sup –1} which corresponds to an accuracy of 0.0004 nm at 830 nm and 0.0017 nm at 1660 nm, respectively.

  12. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  13. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  14. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  15. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  16. Radioactive air emissions notice of construction, use of a portable exhauster on 244-AR vault

    SciTech Connect (OSTI)

    Allen, C.P., Fluor Daniel Hanford

    1997-02-11

    This document serves as a notice of construction (NOC), pursuant to the requirements of Washington Administrative Code (WAC) 246-247- 060, and as a request for approval to construct pursuant to 40 Code of Federal Regulations (CFR) 61.96, for the use of a portable exhauster at the 244-AR Vault during transfers or movement of radioactive waste as part of pumping of secondary containment, tank stabilization/pumping, and other activities (i.e., transfer or pumping of radioactive waste using established procedures, entries for maintenance and inspections) within the 244-AR Vault.

  17. XeCl Avalanche discharge laser employing Ar as a diluent

    DOE Patents [OSTI]

    Sze, Robert C.

    1981-01-01

    A XeCl avalanche discharge exciplex laser which uses a gaseous lasing starting mixture of: (0.2%-0.4% chlorine donor/2.5%-10% Xe/97.3%-89.6% Ar). The chlorine donor normally comprises HCl but can also comprise CCl.sub.4 BCl.sub.3. Use of Ar as a diluent gas reduces operating pressures over other rare gas halide lasers to near atmospheric pressure, increases output lasing power of the XeCl avalanche discharge laser by 30% to exceed KrF avalanche discharge lasing outputs, and is less expensive to operate.

  18. XeCl avalanche discharge laser employing Ar as a diluent

    DOE Patents [OSTI]

    Sze, R.C.

    1979-10-10

    A XeCl avalanche discharge exciplex laser which uses a gaseous lasing starting mixture of: 0.2 to 0.4% chlorine donor/2.5% to 10% Xe/97.3% to 89.6% Ar) is provided. The chlorine donor normally comprises HCl but can also comprise CCl/sub 4/ BCl/sub 3/. Use of Ar as a diluent gas reduces operating pressures over other rare gas halide lasers to near atmospheric pressure, increases output lasing power of the XeCl avalanche discharge laser by 30% to exceed KrF avalanche discharge lasing outputs, and is less expensive to operate.

  19. Nonadiabatic molecular collisions. II. A further trajectory-surface-hopping study of the ArH/sup +//sub 2/ system

    SciTech Connect (OSTI)

    Chapman, S.

    1985-05-01

    Both charge transfer and chemical reaction are studied for the reactants Ar/sup +/+H/sub 2/, Ar+H/sup +//sub 2/, and Ar+D/sup +//sub 2/, using the trajectory-surface-hopping model with diatomics-in-molecules /sup 2/A' surfaces for ArH/sup +//sub 2/. Results are compared with a number of recent experiments. Agreement with experiment is generally satisfactory. The reactions are direct. The Ar/sup +/+H/sub 2/ ..-->.. ArH/sup +/+H reaction is well characterized as a stripping process. Charge transfer occurs predominantly by long-range electron jump. The Ar+H/sup +//sub 2/ and Ar+D/sup +//sub 2/ cross sections depend sensitively on reactant vibration, rising sharply from v = 0 to v = 1, and falling gradually for v> or =2. The ArH/sup +/ product is rotationally hot. Points of disagreement with experiment are discussed in the light of the approximations in the surface and the TSH model.

  20. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  1. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  2. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  3. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  4. Production of Ar{sup q+} ions with a tandem linear Paul trap

    SciTech Connect (OSTI)

    Higaki, H. Nagayasu, K.; Iwai, T.; Ito, K.; Okamoto, H.

    2015-06-29

    A tandem linear Paul trap was used to create highly charged Argon ions by electron impact ionizations. By improving the operation scheme, the production of Ar{sup 4+} ions was confirmed. Possible improvements for the future experiments with laser cooled Ca{sup +} ions are suggested.

  5. Properties of steady discharge in Ar-Kr-F2 gas mixture

    SciTech Connect (OSTI)

    Chengen, Z.

    1981-11-01

    Some properties of Ar-Kr-F/sub 2/ laser gas mixture plasma under steady discharge conditions are computed and discussed. Both the excitation rate of the discharging electrons and the distribution of the discharge energy are discussed. The effects of fluoride gas content and impurity gas content on the discharge property are studied.

  6. Heavy ion beam induced charge transfer in Ar-Cs mixtures

    SciTech Connect (OSTI)

    Murnick, D.E.; Gernhauser, R.; Ulrich, A.; Krotz, W.; Wieser, J.

    1993-12-01

    In situ production of target ions in cold, dense matter by heavy ion collisions and subsequent selective charge transfer may provide an effective pumping scheme for heavy ion beam pumped lasers. Charge transfer from cesium atoms to doubly charged argon ions was used for selective population of 4d-levels in Ar II. The argon ions were produced in an argon-cesium gas target by a pulsed beam of 100 MeV {sup 32}S{sup 8+} ions from the Munich Tandem van de Graaff accelerator. The ion beam of 12 {times} 10{sup 6} ions/pulse had a pulse width of 2 ns and a repetition rate of 32 kHz. The argon pressure was typically 250 mbar. The cesium partial pressure was adjusted by heating the gas target, including a cesium reservoir, to temperatures between 250 and 500{degrees}C. Time resolved wavelength spectra showed large intensity increases corresponding to 4d {sup 4}D and 4d {sup 4}F to 4p transitions in Ar II in the ultraviolet wavelength region between 300 and 400 nm. This is interpreted as a resonant charge transfer of outer electrons of cesium to 4d levels in Ar II in Cs{sup 0} + Ar{sup 2+} collisions.

  7. CALiPER Application Summary Report 17. LED AR111 and PAR36 Lamps

    SciTech Connect (OSTI)

    none,

    2012-08-01

    Report 17 analyzes the performance of a group of six LED products labeled as AR111 lamps. Results indicate that this product category lags behind other types of directional LED lamps but may perform acceptably in some applications and provide some energy savings.

  8. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  9. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  10. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.