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1

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

2

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect (OSTI)

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

3

Jasmine R. Scott1, Nathan Tarlyn2, Amit Dhingra2 and Kate Evans2 1Fort Valley State University, GA and 2Department of Horticulture, Washington State University, WA  

E-Print Network [OSTI]

and 2Department of Horticulture, Washington State University, WA Time travel with apples: Can you see on selection media in the dark. After a week, cultures were moved to the light to induce shoot development

Collins, Gary S.

4

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

Seattle, WA Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Seattle WA Puget Sound Energy Inc.png SVFullServiceRestauran... 60 KB SVHospital Seattle WA Puget Sound Energy Inc.png SVHospital Seattle WA ... 58 KB SVLargeHotel Seattle WA Puget Sound Energy Inc.png SVLargeHotel Seattle W... 57 KB SVLargeOffice Seattle WA Puget Sound Energy Inc.png SVLargeOffice Seattle ... 57 KB SVMediumOffice Seattle WA Puget Sound Energy Inc.png SVMediumOffice Seattle... 61 KB SVMidriseApartment Seattle WA Puget Sound Energy Inc.png SVMidriseApartment Sea... 58 KB SVOutPatient Seattle WA Puget Sound Energy Inc.png SVOutPatient Seattle W... 63 KB

5

WA_1993_040_REGENTS_OF_THE_UNIVERSITY_OF_CALIFORNIA_Waiver_o...  

Broader source: Energy.gov (indexed) [DOE]

WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNI...

6

WA_00_030_ASE_AMERICAS_Request_to_Assign_Title_to_Waiver-Inv...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA03032RWESCHOTTSOLARINCWaiverof...

7

Category:Yakima, WA | Open Energy Information  

Open Energy Info (EERE)

Yakima, WA Yakima, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Yakima, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Yakima WA Puget Sound Energy Inc.png SVFullServiceRestauran... 61 KB SVHospital Yakima WA Puget Sound Energy Inc.png SVHospital Yakima WA P... 58 KB SVLargeHotel Yakima WA Puget Sound Energy Inc.png SVLargeHotel Yakima WA... 58 KB SVLargeOffice Yakima WA Puget Sound Energy Inc.png SVLargeOffice Yakima W... 58 KB SVMediumOffice Yakima WA Puget Sound Energy Inc.png SVMediumOffice Yakima ... 57 KB SVMidriseApartment Yakima WA Puget Sound Energy Inc.png SVMidriseApartment Yak... 59 KB SVOutPatient Yakima WA Puget Sound Energy Inc.png SVOutPatient Yakima WA... 63 KB SVPrimarySchool Yakima WA Puget Sound Energy Inc.png

8

In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

9

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

10

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry  

SciTech Connect (OSTI)

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)] [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2013-11-15T23:59:59.000Z

11

Advance Patent Waiver W(A)2013-013 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA98023McDERMOTTTECHNOLOGYINCWaiverofDomesticandFo.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96004GECORPORATERESEARCHand...

12

WA_1995_018_OPTICAL_COATING_LABORATORY_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICAL...

13

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04028AIRPRODUCTSANDCHEMICAL...

14

WA_98_023_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Domestic_and_Fo...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00007COMBUSTIONENGINEERINGINCW...

15

WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...  

Broader source: Energy.gov (indexed) [DOE]

WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

16

WA_04_009_ROCKWELL_SCIENTIFIC_CO_Wailve_of_Domestic_And_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA00030ASEAMERICASRequesttoAssign...

17

WA_1995_019_DONNELLY_CORPORATION_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA00030ASEAMERICASRequesttoAssignTitletoWaiver-Inv.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA04009ROCKWELLSCIENTIFICCOWailve...

18

RAPID/Roadmap/11-WA-a | Open Energy Information  

Open Energy Info (EERE)

Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 11-WA-a State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf...

19

Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar? = C6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (L = HC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3  

E-Print Network [OSTI]

6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and [Ni(CO) 3 (GaL)] (LC(CH 3 )N(C 6 H 3 -2,6-iPr 2 )] 2 ): Thermal DecompositionC 6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and GaL (L = HC[C(Me)

Serrano, Oracio; Hoppe, Elke; Power, Philip P.

2010-01-01T23:59:59.000Z

20

WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WA_96_016_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domestic_...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

16AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

22

WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

23

WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

24

WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

25

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

26

WA_1993_028_ALLIANCE_ELECTRIC_COMPANY_Waiver_of_Domestic_and...  

Broader source: Energy.gov (indexed) [DOE]

3028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomestic...

27

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

28

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

29

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Broader source: Energy.gov (indexed) [DOE]

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS Energy Efficiency and Conservation Block Grant Program Location: Tribe WA-TRIBE- STILLAGUAMISH TRIBE OF INDIANS WA American Recovery and Reinvestment Act: Proposed Action or Project Description The Stillaguamish Tribe proposes to expand its Stillaguamish Tribe Transit Services (STTS). For the past three years, the STTS has employed 14-passenger buses to transport clients to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time; therefore, funds are being requested to purchase a hybrid sedan to transport clients. Conditions: None Categorical Exclusion(s) Applied: A1, B1.32, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

30

WA_98_016_ABB_POWER_T_AND_D_COMPANY_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2011-046 Advance Patent Waiver W(A)2009-016 WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic...

31

Advance Patent Waiver W(A)2009-030 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

public. Advance Patent Waiver W(A)2009-030 More Documents & Publications WA97030AIRPRODUCTSWaiverofDomesticandForeignPaten.pdf WA98001REYNOLDSMETALSCOMPANYW...

32

WA_04_085_THE_BOEING_COMPANY_Waiver_of_domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2010-018 Advance Patent Waiver W(A)2007-012 WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand...

33

WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

34

WA_00_035_ALCOA_INC_Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA03054HEILTRAILERINTERNATIONALWaiverofDomesticand.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

35

WA_03_054_HEIL_TRAILER_INTERNATIONAL_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA00035ALCOAINCWaiverofDomesticandForeignRightsin.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

36

RAPID/Roadmap/4-WA-a | Open Energy Information  

Open Energy Info (EERE)

4-WA-a State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Permit Overview Developers desiring to conduct geothermal exploration activities on...

37

RAPID/Roadmap/3-WA-b | Open Energy Information  

Open Energy Info (EERE)

needs access to state lands for exploratory purposes, then they should begin the State Exploration Process. Green arrow.PNG 4-WA-a: State Exploration Process 3-WA-b.3 to...

38

RAPID/Roadmap/19-WA-f | Open Energy Information  

Open Energy Info (EERE)

9-WA-f Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Permit Overview A developer...

39

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI -  

Broader source: Energy.gov (indexed) [DOE]

WA Dept. of Commerce STATE: WA WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI - Demand Energy - Energy Storage System Tied to Solar on Commercial Facility TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000052 DE-EEOOO0139 GFO-o000139-031 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

40

Advance Patent Waiver W(A)2011-011 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2011-011 More Documents & Publications Advance Patent Waiver W(A)2008-011 Advance Patent Waiver W(A)2008-045 WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Advance Patent Waiver W(A)2005-006 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

42

Advance Patent Waiver W(A)2002-023 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

2-023 Advance Patent Waiver W(A)2002-023 Advance Patent Waiver W(A)2002-023 More Documents & Publications Advance Patent Waiver W(A)2006-028 WA05056IBMWATSONRESEARCHCENTERWa...

43

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

44

WA_07_038_POET_PROJECT_LIBERTY_LLC_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

7038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomestic...

45

WA_1993_041_ROCKETDYNE_AND_LLNL_Waiver_of_the_Governments_U.pdf...  

Broader source: Energy.gov (indexed) [DOE]

1ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pd...

46

WA_1993_042_UNITED_TECHNOLOGIES_CORPORATION_Waiver_of_the_Go...  

Broader source: Energy.gov (indexed) [DOE]

TIONWaiveroftheGo.pdf More Documents & Publications WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU...

47

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

COMPANYWaiverofDomesticandForeign.pdf More Documents & Publications WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA98008GENERALELECTRICCOMPANYWaive...

48

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

49

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Broader source: Energy.gov (indexed) [DOE]

15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

50

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

51

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

52

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Broader source: Energy.gov (indexed) [DOE]

1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

53

WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

54

WA_03_018_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomestica...

55

WA_02_028_TRANE_CO__Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

5YORKINTERNATIONALCORPORATIONWaiverofDomesti.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverofDomestica.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore...

56

WA_04_040_HONEYWELL_INTERNATIONAL_INC_Waiver_of_Patent_Right...  

Broader source: Energy.gov (indexed) [DOE]

40HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRi...

57

WA_03_041_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomestica...

58

WA_01_011_HONEYWELL_LABORATORIES_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

11HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandF...

59

WA_00_011_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

0011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomestica...

60

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

34NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFo...

62

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

63

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

BayWa Group BayWa Group Jump to: navigation, search Name BayWa Group Place Munich, Germany Zip 81925 Sector Services, Solar Product Germany-based company with international operations specialised in wholesale and retail and in providing services. The company is also active in the biofuel and solar sectors. Coordinates 48.136415°, 11.577531° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.136415,"lon":11.577531,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

64

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

Sunways JV Jump to: navigation, search Name: BayWa & Sunways JV Place: Germany Sector: Solar Product: Germany-based JV that specialises in developing, planning and realizing...

65

RAPID/Roadmap/14-WA-b | Open Energy Information  

Open Energy Info (EERE)

RAPID Regulatory and Permitting Information Desktop Toolkit BETA RAPID Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 14-WA-b NPDES Permit...

66

RAPID/Roadmap/9-WA-a | Open Energy Information  

Open Energy Info (EERE)

(EIS) is necessary. Contact Information Agency Washington State Department of Ecology Position State Environmental Issues Contact Name Fran Sant Email fran.sant@ecy.wa.gov...

67

Fourth Annual SECA Meeting - Seattle, WA  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fourth Annual SECA Meeting - Seattle, WA Fourth Annual SECA Meeting - Seattle, WA April 15-16, 2003 Table of Contents Disclaimer Papers and Presentations Expanded Applications of SECA Fuel Cells SECA Industrial Team Reports Military Applications of Fuel Cells Technology Highlights Environmental Considerations Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government or any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

68

waTer economics. environmenTand Policy  

E-Print Network [OSTI]

41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

Botea, Adi

69

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester  

Broader source: Energy.gov (indexed) [DOE]

of5 of5 RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-EE0000139 GF0-10-604 Based on my review oftbe information concerning the proposed action, as NEPA CompUance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: cx, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

70

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

National Nuclear Security Administration (NNSA)

Hanford, WA Selected as Plutonium Production Facility | National Nuclear Hanford, WA Selected as Plutonium Production Facility | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility January 16, 1943 Hanford, WA

71

Advance Patent Waiver W(A)2008-035 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

public. Advance Patent Waiver W(A)2008-035 More Documents & Publications WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf Advance Patent Waiver W(A)2008-022...

72

Advance Patent Waiver W(A)2010-042 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2010-042 More Documents & Publications Advance Patent Waiver W(A)2005-023 WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf ClassWaiverWC-2003-001.pdf...

73

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Broader source: Energy.gov (indexed) [DOE]

POWERWaiverofPatentRightsinPerformance.pdf More Documents & Publications WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99022AIRPRODUCTSANDCHEMICAL...

74

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Broader source: Energy.gov (indexed) [DOE]

2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

75

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

2FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO...

76

WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...  

Broader source: Energy.gov (indexed) [DOE]

18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

77

WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

IRTECHNOLOGIESWaiverofDomesticandFor.pdf More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02021H2GENINNOVATIONSWaiverof...

78

WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...  

Broader source: Energy.gov (indexed) [DOE]

24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

79

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Broader source: Energy.gov (indexed) [DOE]

1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

80

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Broader source: Energy.gov (indexed) [DOE]

2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...  

Broader source: Energy.gov (indexed) [DOE]

01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

82

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Broader source: Energy.gov (indexed) [DOE]

04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

83

WA_02_022_HONEYWELL_INC_Waiver_of_Domestic_and_Foreign_Inven...  

Broader source: Energy.gov (indexed) [DOE]

22HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignIn...

84

WA_02_045_KENNAMETAL_INC_Waiver_of_Domestic_and_Foreign_Righ...  

Broader source: Energy.gov (indexed) [DOE]

LINCWaiverofDomesticandForeignRigh.pdf More Documents & Publications WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA01034INGERSOLL-RANDENERGYSYSTEMS...

85

WA_04_039_HONEYWELL_INTERNATIONAL_Waiver_of_Patent_Rights_Un...  

Broader source: Energy.gov (indexed) [DOE]

9HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRights...

86

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

87

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Broader source: Energy.gov (indexed) [DOE]

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

88

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

89

RAPID/Roadmap/18-WA-b | Open Energy Information  

Open Energy Info (EERE)

period in which the WSDE has to respond to the Demonstration of Compliance. 18-WA-b.17 - Conduct Public Meeting, if Requested If the public requests a public meeting on the...

90

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect (OSTI)

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

91

Gaseous Detonation-Driven Fracture of Tubes Tong Wa Chao  

E-Print Network [OSTI]

Gaseous Detonation-Driven Fracture of Tubes Thesis by Tong Wa Chao In Partial Fulfillment An experimental investigation of fracture response of aluminum 6061-T6 tubes under internal gaseous detonation on the detonation velocity, strain history, blast pressure from the crack opening, and crack speeds. The curved

92

EIS-0397: Lyle Falls Fish Passage Project, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

93

DOE - Office of Legacy Management -- University of Washington - WA 0-01  

Office of Legacy Management (LM)

Washington - WA 0-01 Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating under active NRC license WA.0-01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: None Indicated WA.0-01-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see

94

File:INL-geothermal-wa.pdf | Open Energy Information  

Open Energy Info (EERE)

wa.pdf wa.pdf Jump to: navigation, search File File history File usage Washington Geothermal Resources Size of this preview: 699 × 600 pixels. Full resolution ‎(4,835 × 4,147 pixels, file size: 3.28 MB, MIME type: application/pdf) Description Washington Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent State Countries United States UN Region Northern America States Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:45, 16 December 2010 Thumbnail for version as of 12:45, 16 December 2010 4,835 × 4,147 (3.28 MB) MapBot (Talk | contribs) Automated upload from NREL's "mapsearch" data

95

GRR/Section 15-WA-a - Air Quality Notice of Construction Permit | Open  

Open Energy Info (EERE)

5-WA-a - Air Quality Notice of Construction Permit 5-WA-a - Air Quality Notice of Construction Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-a - Air Quality Notice of Construction Permit 15-WA-a - Air Quality Notice of Construction Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-400-110 WAC 173-400-111 WAC 173-400-171 Triggers None specified This flowchart illustrates the process for obtaining an Air Quality Notice of Construction Permit. The Washington State Department of Ecology (WSDE) oversees the permitting process under WAC 173-400. 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf

96

GRR/Section 9-WA-b - State Environmental Review | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 9-WA-b - State Environmental Review GRR/Section 9-WA-b - State Environmental Review < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-b - State Environmental Review 9-WA-b - State Environmental Review.pdf Click to View Fullscreen Triggers None specified Once the lead agency is determined they are responsible for continuing forward with environmental review. In Washington, environmental review is effectuated through the developer completing an Environmental Checklist which assists the lead agency in determining whether the proposal will likely result in negative impacts on the environment. 9-WA-b - State Environmental Review.pdf 9-WA-b - State Environmental Review.pdf Error creating thumbnail: Page number not in range.

97

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

4-022 4-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract entitled "Utility Scale Joint Venture Project," between Cummins Power Generation, Inc. and Sandia National Laboratories (Contract No. AB- 8717B) under Management and Operations Contract DE-AL04-84AL85000, DOE Docket No. W(A)94-022. The petitioner, Cummins Power Generation, Inc., (CPG) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or first actually reduce to practice in the course of work under the Utility Scale Joint Venture Project between Petitioner and Sandia National Laboratories (Sandia) under contract No. AB- 8717B. Sandia is operated by Sandia Corporation for the U.S. Department of Energy (DOE).

98

W(A)93-013 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

13 13 STATEMENT OF CONSIDERATIONS Request by AlliedSignal, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94462 between the United States Department of Energy (DOE) and AlliedSignal, Inc. DOE Docket: W(A)93-013 The Petitioner, AlliedSignal, Inc. (AlliedSignal), has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94462, a Cooperative Agreement with DOE. The project period is May 14, 1993 through May 13, 1996. The Cooperative Agreement covers work in designing a biological/chemical production process for caprolactam using microbial bioprocesses that convert cyclohexane to

99

W(A)93-039 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

39 39 STATEMENT OF CONSIDERATIONS Request by Air Products and Chemicals, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94461 between the United States Department of Energy (DOE) and Air Products and Chemicals, Inc. DOE Docket: W(A)93-039. The Petitioner, Air Products and Chemicals, Inc., (Air Products) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94461 a Cooperative Agreement with DOE. The contract covers a four phase development program for a recently patented technology developed at Air Products entitled "Novel Selective Surface Flow (SSF T ) Membranes for the

100

GRR/Section 12-WA-a - Live Wildlife Taking Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 12-WA-a - Live Wildlife Taking Permit GRR/Section 12-WA-a - Live Wildlife Taking Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-WA-a - Live Wildlife Taking Permit 12-WA-a - Live Wildlife Taking Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Fish and Wildlife Regulations & Policies WAC 232-12-064 Triggers None specified In Washington, it is unlawful to take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064. 12-WA-a - Live Wildlife Taking Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

73: W.A. Parish Post-Combustion CO2 Capture and Sequestration 73: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

102

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department  

Broader source: Energy.gov (indexed) [DOE]

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) June 12, 2013 DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) More Documents & Publications Regulatory Burden RFI DOE response to questions from AHAM on the supplemental proposed test procedure for residential clothes washers Scoping Study to Evaluate Feasibility of National Databases for EM&V Documents and Measure Savings: Appendices

103

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

104

GRR/Section 3-WA-b - Land Access Overview | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-b - Land Access Overview GRR/Section 3-WA-b - Land Access Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-b - Land Access Overview 3-WA-b - Land Access Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Triggers None specified Any developer that needs access to or through state lands must obtain the appropriate permit or lease. The developer will obtain such permit or lease through the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

105

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network [OSTI]

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

106

Argon metastable densities in radio frequency Ar, Ar/O2 and Ar/CF4 electrical discharges  

E-Print Network [OSTI]

Argon metastable densities in radio frequency Ar, Ar/O2 and Ar/CF4 electrical discharges Shahid. In this article, we present results from a two-dimensional computer simulation of Ar, Ar/O2, and Ar/CF4 discharges in the ambipolar electric field resulting from electrode structures. Additions of small amounts of O2 and CF4

Kushner, Mark

107

Decay of Ar41  

Science Journals Connector (OSTI)

A weak gamma ray has been found in the decay of Ar41 to K41. The energy of the gamma ray is 1.664±0.007 MeV; and its intensity, relative to that of the strong 1.293-MeV gamma ray, is (5±2)×10-4. It is concluded from the results of conincidence measurements that this gamma ray is the result of a beta-ray branch from Ar41 leading to an excited state in K41 at 1.664 MeV. The associated logft value is found to be 7.7±0.3. The spin and parity of the 1.664-MeV state in K41 are most probably 52+ or 72+.

William W. Pratt

1965-08-09T23:59:59.000Z

108

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department of  

Broader source: Energy.gov (indexed) [DOE]

7: Hanford Site Natural Gas Pipeline, Richland, WA 7: Hanford Site Natural Gas Pipeline, Richland, WA EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA Summary This EIS will evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas pipeline. The pipeline would deliver natural gas to support the Waste Treatment Plant and the 242-A Evaporator operations in the 200 East Area of the Hanford Site. Public Comment Opportunities None available at this time. For more information, contact: Mr. Douglas Chapin, NEPA Document Manager U.S. Department of Energy Richland Operations Office P.O. Box 550, MSIN A5-11 Richland, WA 99352 Documents Available for Download January 23, 2012 EIS-0467: Notice of Intent to Prepare an Environmental Impact Statement and

109

GRR/Section 9-WA-c - State Environmental Impact Statement | Open Energy  

Open Energy Info (EERE)

GRR/Section 9-WA-c - State Environmental Impact Statement GRR/Section 9-WA-c - State Environmental Impact Statement < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-c - State Environmental Impact Statement 9-WA-c - State Environmental Impact Statement.pdf Click to View Fullscreen Triggers None specified The primary purpose of an Environmental Impact Statement (EIS) is to ensure that the Washington State Environmental Policy Act (SEPA) policies are an integral part of the ongoing programs and actions of state and local government. An EIS must provide impartial discussion of significant environmental impacts and must inform decision makers and the public of reasonable alternatives, including mitigation measures that would avoid or minimize adverse impacts or enhance environmental quality. WAC 197-11-400.

110

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells |  

Open Energy Info (EERE)

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-f - Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.44.100 Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well in a different location than a previous well, drill an additional well at an existing location, or drill a replacement well at the same

111

GRR/Section 11-WA-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-WA-a - State Cultural Considerations Overview GRR/Section 11-WA-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-a - State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf Click to View Fullscreen Triggers None specified The developer will be required to comply with Washington state law when human remains or other cultural resources are discovered on a project site. Cultural resources include both historic and archaeological resources and sites. The discovery of cultural resources may require obtaining a permit and providing public notice and notice to Indian Tribes. Once the necessary procedures have been followed, the developer may continue with the project.

112

GRR/Section 14-WA-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-c - Underground Injection Control Permit GRR/Section 14-WA-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-c - Underground Injection Control Permit 14-WA-c - Underground Injection Control Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Chapter 173-218 WAC Non-endangerment Standard Triggers None specified The Safe Drinking Water Act requires Washington to implement technical criteria and standards to protect underground sources of drinking water from contamination. Under Chapter 173-218 WAC, the Washington State Department of Ecology (WSDE) regulates and permits underground injection control (UIC) wells in Washington. The Environmental Protection Agency

113

GRR/Section 18-WA-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 18-WA-a - Underground Storage Tank Process GRR/Section 18-WA-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-a - Underground Storage Tank Process 18-WA-a - Underground Storage Tank Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.76 Washington Administrative Code Chapter 173-360 Triggers None specified Washington has a federally-approved state Underground Storage Tank (UST) program regulated by the Washington State Department of Ecology (WSDE) under Revised Code of Washington Chapter 90.76 and Washington Administrative Code Chapter 173-360. Washington defines an "Underground

114

GRR/Section 5-WA-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-WA-a - Drilling and Well Development GRR/Section 5-WA-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-WA-a - Drilling and Well Development 5-WA-a.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified In Washington geothermal drilling and well development are regulated by the Washington State Department of Natural Resources (WSDNR). Geothermal production wells and core holes deeper than 750ft require the developer go through the whole WSDNR permitting process (which requires a public hearing) and require that the developer complete the State Environmental

115

GRR/Section 3-WA-e - State Right of Way Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-e - State Right of Way Process GRR/Section 3-WA-e - State Right of Way Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-e - State Right of Way Process 3-WA-e - State Right of Way Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-36-350 RCW 79-36-520 RCW 79-36-530 Triggers None specified This flowchart illustrates the process for obtaining a right of way over state lands in Washington. The right of way process is overseen by the Washington State Department of Natural Resources (WSDNR). The right of way process is regulated under Revised Code of Washington (RCW) 79-36-350. The developer may apply for an easement, permit or license for a right of

116

GRR/Section 14-WA-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-d - Section 401 Water Quality Certification GRR/Section 14-WA-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-d - Section 401 Water Quality Certification 14-WA-d - 401 Water Quality Certification.pdf Click to View Fullscreen Contact Agencies U S Army Corps of Engineers Washington State Department of Ecology Regulations & Policies Revised Statute of Washington Chapter 90.48 Washington Administrative Code Chapter 173-201A Washington Administrative Code 173-225-030 Triggers None specified Developers requiring a Section 404 Dredge and Fill Permit from the U S Army Corps of Engineers (Corps) are required to obtain a Section 401 Water Quality Certification from the state of Washington. The Washington State

117

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change of Water  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water 19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-d - Water Conservancy Board Transfer or Change of Water Right 19-WA-d - Water Conservancy Board Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.80 RCW 90.03.380 90.03.390 RCW 90.44.100 Triggers None specified In 1997, the Washington Legislature authorized the creation of water conservancy boards through the enactment of Revised Code of Washington Chapter 90.80 to expedite the administrative process for voluntary water right transfers within individual counties. In counties where a water

118

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well | Open  

Open Energy Info (EERE)

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well GRR/Section 19-WA-e - Water Well Notice of Intent for New Well < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-e - Water Well Notice of Intent for New Well 19-WA-e - Water Well Notice of Intent for New Well.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well to access the ground water. When a developer needs to drill a new well, the developer must complete the Notice of Intent (NOI) to Drill a Well form and submit the form to the Washington State Department of Ecology

119

GRR/Section 14-WA-b - State NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-b - State NPDES Permitting Process GRR/Section 14-WA-b - State NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-b - State NPDES Permitting Process 14-WA-b - State NPDES Permitting Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology United States Environmental Protection Agency Regulations & Policies Clean Water Act Chapter 90.48 RCW Chapter 173-216 WAC Triggers None specified Section 402 of the Clean Water Act (CWA) required the Environmental Protection Agency (EPA) to establish the National Pollutant Discharge Elimination System (NPDES) to regulate discharge of pollutants from point sources. In Washington, the EPA has delegated responsibility of NPDES to

120

GRR/Section 4-WA-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 4-WA-a - State Exploration Process GRR/Section 4-WA-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-WA-a - State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified Geothermal exploration in Washington requires a Geothermal Exploration Permit from the Washington State Department of Natural Resources (WSDNR) for invasive exploration or drilling. Operations that require an exploration or drilling permit will also require the developer to initiate the State Environmental Policy Act (SEPA). In Washington geothermal resources are regulated under Chapter 78.60 RCW

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

GRR/Section 3-WA-d - State Land Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-d - State Land Lease GRR/Section 3-WA-d - State Land Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-d - State Land Lease 3-WA-d - State Land Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-13-020 RCW 79-13-140 RCW 79-13-150 WAC 332-22-030 WAC 332-22-105 WAC 332-22-110 Triggers None specified This flowchart illustrates the process used to lease state lands in Washington. The Washington State Department of Natural Resources (WSDNR) oversees the land leasing process through the Commissioner of Public Lands ("commissioner"). The WSDNR may lease state lands for purposes it deems advisable, including commercial, industrial, residential, agricultural, and

122

GRR/Section 3-WA-c - Utility Franchise or Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 3-WA-c - Utility Franchise or Permit Process GRR/Section 3-WA-c - Utility Franchise or Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-c - Utility Franchise or Permit Process 3-WA-c - Utility Franchise or Permit Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Department of Transportation Regulations & Policies WAC 468-34-060 WAC 468-34-080 WAC 468-34-110 WAC 468-34-160 WAC 468-34-170 Triggers None specified This flowchart illustrates the process of obtaining a franchise or permit through a state highway right of way in Washington State. A utility permit or franchise is required for occupancy of a highway right of way by utility facilities, including private lines. WAC 468-34-160. The process is

123

GRR/Section 19-WA-b - New Water Right Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 19-WA-b - New Water Right Permit Process GRR/Section 19-WA-b - New Water Right Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-b - New Water Right Permit Process 19-WA-b - New Water Right Permit Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 Triggers None specified Washington uses a prior appropriation system for the distribution of both surface water and ground water rights in which water users receive the right to use water on a "first in time, first in right" basis. Under Washington law, the waters of Washington belong collectively to the public

124

GRR/Section 19-WA-c - Transfer or Change of Water Right | Open Energy  

Open Energy Info (EERE)

9-WA-c - Transfer or Change of Water Right 9-WA-c - Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-c - Transfer or Change of Water Right 19-WA-c - Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.03.380 Revised Code of Washington 90.44.100 Revised Code of Washington Chapter 90.80 Triggers None specified Much of Washington's public waters have been accounted for through water right claims, permits, or certificates. As a result, many individuals seeking water rights try to acquire existing water rights already in use or change the use of a current water right they already hold. Certain elements

125

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b  

E-Print Network [OSTI]

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b a Mathematical Institute of crystalline solids at atomic resolution from electron microscopic images can be considered the ``holy grail

Kosters, Walter

126

DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

127

GRR/Section 3-WA-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-a - State Geothermal Lease GRR/Section 3-WA-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-a - State Geothermal Lease 3-WA-a State Geothermal Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Chapter 79.14 RCW Chapter 344-12 WAC Triggers None specified The State of Washington is still in the process of developing and finalizing the rules and regulations related to geothermal leases on state lands; however, the Washington State Department of Natural Resources (WSDNR) expects the process to be similar to the process for leasing state lands for oil and natural gas development. The rules and regulations for

128

GRR/Section 11-WA-c - Archaeological Resource Discovery Process | Open  

Open Energy Info (EERE)

GRR/Section 11-WA-c - Archaeological Resource Discovery Process GRR/Section 11-WA-c - Archaeological Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-c - Archaeological Resource Discovery Process 11-WA-c - Archaeological Resource Discovery Process.pdf Click to View Fullscreen Triggers None specified In the state of Washington, cultural resource concerns are integrated as early as possible into the planning for capital projects and are protected if discovered during construction. Washington defines "Cultural resources" as archeological and historical sites and artifacts, and traditional areas or items of religious, ceremonial and social uses to affected tribes. Washington defines an "Archaeological resource" as any

129

GRR/Section 19-WA-a - Water Access and Water Rights Overview | Open Energy  

Open Energy Info (EERE)

9-WA-a - Water Access and Water Rights Overview 9-WA-a - Water Access and Water Rights Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-a - Water Access and Water Rights Overview 19-WA-a - Water Access and Water Rights Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 RCW 90.44.050 Triggers None specified Similar to many western states, only a small amount of water is available for appropriation in Washington. As a result, Washington has developed a comprehensive regulatory scheme for the distribution of water rights and use of water in the state. Washington employs a prior appropriation or

130

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

131

GRR/Section 15-WA-b - Air Operating Permit | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 15-WA-b - Air Operating Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-b - Air Operating Permit 15-WA-b - Air Operating Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-401-500 WAC 173-401-800 WAC 173-401-810 WAC 173-401-735 WAC 173-401-610 Triggers None specified This flowchart illustrates the process for obtaining an Air Operating Permit in Washington State. The Washington State Department of Ecology (WSDE) issues Air Operating Permit under WAC 173-401. An Air Operating Permit is required if a facility has the potential to emit

132

GRR/Section 9-WA-a - State Environmental Overview | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 9-WA-a - State Environmental Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-a - State Environmental Overview 9-WA-a - State Environmental Overview.pdf Click to View Fullscreen Triggers None specified The Washington State Environmental Policy Act (SEPA), chapter 43.21 RCW, requires all governmental agencies to consider the environmental impacts of a proposal before making decisions. Washington uses an Environmental Checklist and Environmental Review (ER) to provide information to help government agencies identify impacts from their proposals and determine whether an Environmental Impact Statement (EIS) is necessary.

133

MEMORANDUM : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A)  

Broader source: Energy.gov (indexed) [DOE]

: APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) 2009-047 GRANTED FOR US SOLAR HOLDINGS LLC UNDER AGREEMENT NO. DE-FC36-08G018 155 US Solar Holdings LLC ("US Solar") has requested that the Department of Energy ("DOE") modify or clarify the cost share requirements set forth in the statement of considerations for the granted advance patent waiver W(A) 2009-047. Specifically, the statement of considerations, as originally granted, states the following: The total cost of the award is approximately $4 million with the Petitioner providing about 50% cost sharing. This waiver is contingent upon the Petitioner maintaining, in aggregate, the above cost sharing percentage over the course of the agreement. Rather than just provide an aggregate cost share requirement of 50% for the agreement, US Solar

134

GRR/Section 7-WA-a - Energy Facility Siting Process | Open Energy  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » GRR/Section 7-WA-a - Energy Facility Siting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-WA-a - Energy Facility Siting Process 7-WA-a - Energy Facility Siting Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Energy Facility Site Evaluation Council Regulations & Policies RCW 80.50.60(1) WAC 463-60 RCW 80.50.090(2) WAC 463-30-270 WAC 463-30-320 Triggers None specified Under RCW 80.50.60(1) a developer may not begin construction of a new energy facility site until they obtain Energy Facility Siting certification

135

GRR/Section 11-WA-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 11-WA-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-b - Human Remains Process 11-WA-b - Human Remains Process (1).pdf Click to View Fullscreen Triggers None specified This flowchart illustrates the necessary procedure when a developer discovers human remains on a project site. In Washington, every person has the duty to notify the coroner upon the discovery of any human remains in the most expeditious manner possible. The Washington Department of Archaeology and Historic Preservation (DAHP) handles the disposition of non-forensic remains, while the county coroner handles the disposition of

136

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA | Department  

Broader source: Energy.gov (indexed) [DOE]

49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA 49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA SUMMARY This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD August 9, 2013 EA-1949: FERC Notice of Availability Errata Sheet

137

Studies of Ar41 from the Ar40(d, p?)Ar41 Reaction  

Science Journals Connector (OSTI)

Particle-gamma coincidence measurements on the Ar40(d, p?)Ar41 reaction have been used to determine branching ratios for the gamma deexcitation of several Ar41 states of excitation energy less than 3.5 MeV. Gas targets of 99.6% Ar40 and a deuteron bombarding energy of 3.5 MeV were used for these measurements. Proton-gamma angular correlations were also studied at ED=3.2 MeV, utilizing a collinear geometry with protons detected in an annular counter placed at 180° and gamma rays detected at several angles between 0° and 90° relative to the beam direction. These data eliminate possible spin assignments of ½ for the levels at 0.517 and 1.354 MeV and when combined with previous work lead to a J?=32- assignment for both of these states.

J. P. Allen; A. J. Howard; D. A. Bromley; J. W. Olness; E. K. Warburton

1967-02-20T23:59:59.000Z

138

GRR/Section 18-WA-b - Dangerous Waste Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 18-WA-b - Dangerous Waste Permit GRR/Section 18-WA-b - Dangerous Waste Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-b - Dangerous Waste Permit 18-WA-b - Dangerous Waste Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-303-020 WAC 173-303-060 WAC 173-303-070 WAC 173-303-071 WAC 173-303-072 WAC 173-303-081 WAC 173-303-082 WAC 173-303-090 WAC 173-303-100 WAC 173-303-110 WAC 173-303-140 WAC 173-303-220 WAC 173-303-281 WAC 173-303-282 WAC 173-303-803 WAC 173-303-845 Triggers None specified The Washington State Department of Ecology (WSDE) oversees the permitting process for dangerous and solid waste. In Washington, a developer must obtain a permit if they handle dangerous waste and solid waste and are

139

DOE Zero Energy Ready Home Case Study: Clifton View Homes, Whidbey Island, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home on Whidbey Island, WA, that scores HERS 37 without PV or HERS -13 with 10 kW PV, enough to power the home and an electric car. The two-story custom home...

140

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA  

E-Print Network [OSTI]

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA Bonneville is a regional agency that markets federal hydropower and augments its power supply with market, everyday citizens, to pay illegally inflated power costs. Because of this, Bonneville should have the legal

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Dry, laser?assisted rapid HBr etching of GaAs  

Science Journals Connector (OSTI)

Dry rapid etching of GaAs has been accomplished using an excimer laser (ArF 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 ?m/min have been achieved on large?area masked substrates. Selective crystallographic etching is observed and controlled in the process.

P. D. Brewer; D. McClure; R. M. Osgood Jr.

1985-01-01T23:59:59.000Z

142

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

the Hanford Site, WA, USA. Woods, Katharine N. ; Singleton,reside at DOE sites across the USA. Nitrate concentrations >

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

143

464 C4H8ArS Tetrahydrothiophene - argon (1/1)  

Science Journals Connector (OSTI)

It contains molecular constants (high-resolution spectroscopic data) of C4H8ArS Tetrahydrothiophene - argon (1/1)

J. Demaison

2011-01-01T23:59:59.000Z

144

Ar-40/Ar-39 Age Constraints for the Jaramillo Normal Subchron...  

Open Energy Info (EERE)

oxygen isotope, climate record calibration of the astronomical timescale proposed by Johnson (1982) and Shackleton et al. (1990). Ar-40Ar-39 ages of a normally magnetized...

145

40Ar/39Ar ages from Fra Mauro  

Science Journals Connector (OSTI)

High temperature40Ar/39Ar ages have been determined for four rock fragments selected from coarse fines returned from Fra Mauro. Three are fragmental rocks in varying stages of recrystallization and the fourth is crystalline with a gabbro mineralogy, relatively devoid of shock features. All of the fragments have a common age of 3.75 ± 0.15 × 109 yr. The ages suggest intense activity, possibly the Imbrium event, at 3.75 × 109 yr ago which has precluded the identification of more primitive material.

J.F. Sutter; L. Husain; O.A. Schaeffer

1971-01-01T23:59:59.000Z

146

Anemometer Data (Wind Speed, Direction) for Quinault #3, WA (2004 - 2005) |  

Open Energy Info (EERE)

Quinault #3, WA (2004 - 2005) Quinault #3, WA (2004 - 2005) Dataset Summary Description Wind data collected from Quinault Indian Reservation in Washington from an anemometer as part of the Native American anemometer loan program. Monthly mean wind speed is available for 2004 through 2005, as is wind direction and turbulence data. Data is reported from a height of 20 m. The data was originally made available by Wind Powering America, a DOE Office of Energy Efficiency & Renewable Energy (EERE) program. A dynamic map displaying all available data from DOE anemometer loan programs is available http://www.windpoweringamerica.gov/anemometerloans/projects.asp. Source EERE Date Released December 02nd, 2010 (4 years ago) Date Updated December 02nd, 2010 (4 years ago) Keywords wind

147

EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA |  

Broader source: Energy.gov (indexed) [DOE]

855: Creston-Bell Rebuild Project, Spokane and Lincoln 855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA Summary This EA (also known as DOE/EA-4406 or DOE/BP-4406) evaluates the potential environmental impacts from rebuilding the Creston-Bell No. 1 115-kV transmission line, including the replacement of wood poles and associated structural components and conductor and access road improvements. The 54-mile long, wood pole line extends from the Bonneville Power Administration (BPA) Creston substation to the BPA Bell substation near Spokane in Lincoln and Spokane Counties, Washington. Additional information about this project is available on the BPA website. Public Comment Opportunities None available at this time. Documents Available for Download

148

40Ar/39Ar Age of the Lathrop Wells Volcanic Center, Yucca Mountain, Nevada  

Science Journals Connector (OSTI)

...are from the total fusion ofindivid-ual whole-rock...automated 40Ar/39Ar laser fusion-microextraction...solution and a 5% HF SCIENCE, VOL. 253...Ar-extraction system. Fusion was induced by a 6-W continuous Ar-ion laser beam focused to a...

BRENT D. TURRIN; DUANE CHAMPION; ROBERT J. FLECK

1991-08-09T23:59:59.000Z

149

DOE Zero Energy Ready Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case-study of a DOE Zero Energy Ready Home on Whidbey Island, WA, that scored HERS 45 without PV. This 2,908 ft2 custom/system home has a SIP roof and walls, R-20 rigid foam under slab, triple-pane windows, ground source heat pump for radiant floor heat, and a unique balanced ventilation system using separate exhaust fans to bring air into and out of home.

150

DOE Zero Energy Ready Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 37 without PV, HERS -1 with PV. This 1,915 ft2 custom home has SIP walls and roof, R-20 XPS under the slab, triple-pane windows, an air to water heat pump for radiant heat, and balanced ventilation with timer –controlled fans to bring in and exhaust air.

151

DOE Zero Energy Ready Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 34 without PV. This 2,000 ft2 system home has R-45 double-stud walls, an unvented flat roof with 2 inches of spray foam plus 18 inches blown cellulose, R-42 XPS under slab, triple-pane windows, and a ductless mini-split heat pump.

152

Dry patterning of InGaN and InAlN  

Science Journals Connector (OSTI)

Dry etch rates of In x Ga1?x N and In x Al1?x N alloys are found to increase with In mole fraction in CH4/H2microwave (2.45 GHz) discharges and to decrease under the same conditions in Cl2/H2 mixtures. Both plasma chemistries produce smooth anisotropicetching across the entire composition range from InN to either GaN or AlN. Addition of SF6 rather than H2 to a Cl2discharge produces faster etch rates and retains smooth morphologies. This suggests that either atomic hydrogen or fluorine is capable of effective removal of N from the III?V nitride materials. Ar+ ion milling rates for InGaAlN alloys are found to be approximately a factor of 2 lower than for more conventional III?V semiconductors like GaAs.

S. J. Pearton; C. R. Abernathy; F. Ren

1994-01-01T23:59:59.000Z

153

L-shell x-ray cross sections for Cl-Ar and Ar-Ar collisions  

Science Journals Connector (OSTI)

Measurements of total x-ray production cross sections for Ar+ -Ar and Cl+ -Ar collisions for incident energies between 200 keV and 1.5 MeV are reported. For Cl+ -Ar collisions, separate argon and chlorine x-ray production cross sections are extracted. The cross sections exhibit steep increases as bombarding energy is increased. Using existing measurements of Auger cross sections, values for the mean fluorescence yields as a function of bombarding energy are deduced. The increases in the x-ray production cross sections are shown to be due primarily to changes in the mean fluorescence yields. A qualitative explanation for the observations is proposed.

H. Oona, J. D. Garcia, and R. J. Fortner

1977-08-01T23:59:59.000Z

154

40AR/39AR THERMAL HISTORY OF THE COSO GEOTHERMAL FIELD | Open Energy  

Open Energy Info (EERE)

AR/39AR THERMAL HISTORY OF THE COSO GEOTHERMAL FIELD AR/39AR THERMAL HISTORY OF THE COSO GEOTHERMAL FIELD Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Proceedings: 40AR/39AR THERMAL HISTORY OF THE COSO GEOTHERMAL FIELD Details Activities (1) Areas (1) Regions (0) Abstract: The age of the geothermal system and the granitic host rock at Coso geothermal system in California is poorly known. This is mainly due to a paucity of vein-type minerals (e.g. adularia, sericite) that can be directly dated. A downhole 40Ar/39Ar thermochronology study of granitic host-rock Kfeldspar is presently being undertaken at the New Mexico Geochronology Research Laboratory at New Mexico Tech. The technique couples the measurement of argon loss from K-feldspar and knowledge of the diffusion parameters of transport in K-feldspar to estimate the longevity

155

40Ar-39Ar Geochronology Of Magmatic Activity, Magma Flux And Hazards At  

Open Energy Info (EERE)

Ar-39Ar Geochronology Of Magmatic Activity, Magma Flux And Hazards At Ar-39Ar Geochronology Of Magmatic Activity, Magma Flux And Hazards At Ruapehu Volcano, Taupo Volcanic Zone, New Zealand Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: 40Ar-39Ar Geochronology Of Magmatic Activity, Magma Flux And Hazards At Ruapehu Volcano, Taupo Volcanic Zone, New Zealand Details Activities (0) Areas (0) Regions (0) Abstract: We have determined precise eruption ages for andesites from Ruapehu volcano in the Tongariro Volcanic Centre of the Taupo Volcanic Zone (TVZ) using 40Ar/39Ar furnace step-heating of separated groundmass concentrates. The plateau ages indicate several eruptive pulses near 200, 134, 45, 22 and <15 ka and, based on our and previous field mapping confirm the lavas of the Te Herenga Formation as the oldest exposed part of the

156

Chemical accelerator studies of reaction dynamics: Ar^+ + CH4 ? ArH^+ + CH3  

E-Print Network [OSTI]

, the reactions Ar+ + GH4 - ArH+ + CHs Ar+ + CD4 - ArD+ + CDs (2a) (2b) The Journal of Chemical Physics. Vol. 62. No.7. 1 April 1975 were studied over the energy range 0.4-25 eV c. m. Velocity and angular distributions of the ionic products have been...!.) Consequently, the dissociation energy Do(Ar-H+} ~ 3.90 eV, resulting in energies of 6.06 and 6.24 eV for dissociation of ArH+ into Ar+(2PS/2} + Hand Ar+(2pI/2} +H, respectively. With a value of D(H-CHs} =4.406 eV,27 the following reaction enthalpies are ob...

Wyatt, J. R.; Strattan, L. W.; Snyder, S. C.; Hierl, Peter M.

1975-01-01T23:59:59.000Z

157

AR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

created to provide remote handling capabilities for the laboratory in its role as a nuclear testing station. In the early 1990s, the group branched into formal robotics,...

158

File:06-WA-b - Washington Construction Storm Water Permit.pdf | Open Energy  

Open Energy Info (EERE)

File File Edit History Facebook icon Twitter icon » File:06-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water Permit.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 60 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:28, 6 December 2013 Thumbnail for version as of 15:28, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs) 15:25, 6 December 2013 Thumbnail for version as of 15:25, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs)

159

File:EIA-Eastern-OR-WA-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

Eastern-OR-WA-BOE.pdf Eastern-OR-WA-BOE.pdf Jump to: navigation, search File File history File usage Eastern Oregon and Washington By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 460 KB, MIME type: application/pdf) Description Eastern Oregon and Washington By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Oregon, Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 18:00, 20 December 2010 Thumbnail for version as of 18:00, 20 December 2010 1,650 × 1,275 (460 KB) MapBot (Talk | contribs) Automated bot upload

160

Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks  

SciTech Connect (OSTI)

Here we explore pulsed laser deposition (PLD), a well known and versatile synthesis method principally used for epitaxial oxide thin film growth, for the synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser vaporized material from bulk GaSe targets in Ar background gas. Uniform coverage of interconnected, crystalline, few-layer, photoresponsive GaSe nanosheets in both in-plane and out-of-plane orientations were achieved under different ablation plume conditions over ~1.5 cm2 areas. Plume propagation was characterized by in situ ICCD-imaging. High (1 Torr) Ar background gas pressures were found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1-3 layer GaSe triangular nanosheets of ~ 200 nm domain size were formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increased linearly with pulse number, adding layers in a two-dimensional (2D) growth mode while maintaining a surface roughness of 2 GaSe layers for increasing overall thickness. Field effect transistors using these interconnected crystalline GaSe networks showed p-type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V-1s-1. Spectrally-resolved photoresponsivities and external quantum efficiencies ranged from 0.4 AW-1 and 100% at 700 nm, to 1.4 AW-1 and 600 % at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit photoresponsive networks of 2D nanosheets with digital thickness control and substrate-scale uniformity for a variety of applications.

Mahjouri-Samani, Masoud [ORNL; Gresback, Ryan G [ORNL; Tian, Mengkun [ORNL; Puretzky, Alexander A [ORNL; Rouleau, Christopher M [ORNL; Eres, Gyula [ORNL; Ivanov, Ilia N [ORNL; Xiao, Kai [ORNL; McGuire, Michael A [ORNL; Duscher, Gerd [University of Tennessee, Knoxville (UTK); Geohegan, David B [ORNL

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

162

DOE Challenge Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov (indexed) [DOE]

TC Legend TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

163

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM  

Broader source: Energy.gov (indexed) [DOE]

it: EE 000 0853 it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination/ Categorical Exclusion Reviewer's Specific Instructions and Rationale (Restrictions and Allowable Activity) Kitsap Built Green Projects B5.1 Waste Stream, Engineering, and Historic Preservation clauses. Kitsap County Building Retrofits and Energy Efficiency Upgrades (Green Jobs Initiative) B5.1 except geothermal Waste Stream, Engineering, and Historic Preservation clauses. Prohibited: Any implementation of geothermal projects/construction activities without NEPA approval from DOE. Geothermal projects are to be provided to DOE for analysis. Energy Efficiency Implementation and Strategy A9, All, B5.1 None Energy Services Corps A9, All, B5.1

164

DOE Challenge Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Dwell Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

165

Microsoft Word - CX-AccessRoads-KingCoWA-FY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

22, 2013 22, 2013 REPLY TO ATTN OF: KEPR-Covington SUBJECT: Environmental Clearance Memorandum Rick Ross Engineer - TELF-TPP-3 Proposed Action: Covington District Culvert Replacements Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): Appendix B1.3, Routine Maintenance Location: King County, WA Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA is proposing to replace existing culverts at 12 access road stream crossings that present barriers to fish passage. These improvements will be made on BPA easement access roads within DNR owned and managed lands. BPA will make these improvements by installing new fish friendly culverts and/or bridges at each stream crossing. The current stream crossings do not meet DNR fish passage standards that will be in

166

DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Clifton View Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

167

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

168

Nr. 077 / 2014 // 6. Mai 2014 Prof. Ngugi wa Thiong'o whrend seiner Rede zur Annahme der Ehrendoktorwrde  

E-Print Network [OSTI]

Nr. 077 / 2014 // 6. Mai 2014 1/5 Prof. Ngugi wa Thiong'o während seiner Rede zur Annahme der der afrikanischen Partneruniversitäten im Netzwerk der BIGSAS würden den Geehrten begleiten. Die Rede

Ullmann, G. Matthias

169

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel  

E-Print Network [OSTI]

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel A. De1 , H. K. D. H. Bhadeshia2 and T. DebRoy3 1 Indian Institute of Technology- ium alloys has been applied to the FSW of steel. The calculations were extended to predict

Cambridge, University of

170

Level Structure of Ar41 from the Ar40(d, p)Ar41 Reaction  

Science Journals Connector (OSTI)

The energy-level structure of Ar41 has been investigated by bombarding argon gas with 7.5-Mev deuterons and measuring the energy spectrum and angular distributions of the reaction protons. A Q value of 3.874±0.006 Mev was measured. Fifty levels were observed, and their excitation energies, ln values, reduced widths, and shell-model configurations have been determined. Mean energies of the shell-model configurations were: 1f72, 0 Mev; 2p32, 1.50 Mev; 2p12, 3.53 Mev; 3s12, 4.78 Mev; 2d52, 4.86 Mev; and 1f52, 5.55 Mev.

E. Kashy; A. M. Hoogenboom; W. W. Buechner

1961-12-15T23:59:59.000Z

171

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

172

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

173

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

174

High doping effects on the in-situ and ex-situ ohmic contacts to n-InGaAs Ashish K. Baraskar1  

E-Print Network [OSTI]

plasma using Ni as etch mask. A four-point probe technique was used to measure resistances usingGaAs surface using i-line optical photolithography and lift-off. Mo and Ti/TiW were then dry etched in SF6/Ar

Rodwell, Mark J. W.

175

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee)ng Loca)on Date -Change in Slide Master CDP FINAL DESIGN REVIEW  

E-Print Network [OSTI]

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Outline Single PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Background Estimation ­ One of the unsolved issues

Masci, Frank

176

40Ar/39Ar Geochronology of Post-Valles Caldera Rhyolites, Jemez...  

Open Energy Info (EERE)

during which rhyolite domes, flows, and pyroclastic rocks were emplaced from ring fracture vents. Previously, ages were based on limited K-Ar dating and stratigraphic...

177

Category:Little Rock, AR | Open Energy Information  

Open Energy Info (EERE)

AR AR Jump to: navigation, search Go Back to PV Economics By Location Media in category "Little Rock, AR" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Little Rock AR Entergy Arkansas Inc.png SVFullServiceRestauran... 71 KB SVHospital Little Rock AR Entergy Arkansas Inc.png SVHospital Little Rock... 69 KB SVLargeHotel Little Rock AR Entergy Arkansas Inc.png SVLargeHotel Little Ro... 70 KB SVLargeOffice Little Rock AR Entergy Arkansas Inc.png SVLargeOffice Little R... 71 KB SVMediumOffice Little Rock AR Entergy Arkansas Inc.png SVMediumOffice Little ... 68 KB SVMidriseApartment Little Rock AR Entergy Arkansas Inc.png SVMidriseApartment Lit... 70 KB SVOutPatient Little Rock AR Entergy Arkansas Inc.png SVOutPatient Little Ro...

178

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

179

40Ar/39Ar Age of Cretaceous-Tertiary Boundary Tektites from Haiti  

Science Journals Connector (OSTI)

...90G15K obtained with laser system and for...ultrason-ically in dilute HF (-5%) for removal...size for total-fusion and incremental-heating...We determined laser total fusion 'Ar/ 39Ar ages...mean of the four laser-fusion plateau ages at...

G. A. IZETT; G. B. DALRYMPLE; L. W. SNEE

1991-06-14T23:59:59.000Z

180

Crystallization phase transition in the precursors of CIGS films by Ar-ion plasma etching process  

Science Journals Connector (OSTI)

Abstract Mixed alloy Cu–In–Ga precursors were deposited from Cu–Ga alloy and Indium targets by the DC magnetron co-sputtering method. There were four crystallization phases, In, CuIn2, Cu11In9 and Cu3Ga, identified in the precursor after deposition. A large grain-size CIGS film was achieved by controlling the annealing period for selenization and utilizing a two-stage selenization process for secondary crystallization during rapid thermal annealing process. As the annealing temperature increased, the phase transitions moved toward the Cu-rich inter-metallic phases. In addition, the phase transition, stoichiometric ratio and surface-morphology were modified by Ar-ion plasma etching process of the precursors. The results show that after the ion etching process, the precursors can be transferred into a single Cu11In9 crystallization phase and the number of crevices increased due to the soft texture of indium on the surface of the precursors. Finally, CIGS films with good crystalline properties were achieved after a suitable selenization process of only 1-stage.

Wei-Ting Lin; Sheng-Hui Chen; Shih-Hao Chan; Sung-Cheng Hu; Wan-Xuan Peng; Yung-Tien Lu

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network [OSTI]

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

182

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

183

A review of "Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625." by Charles W.A. Prior  

E-Print Network [OSTI]

REVIEWS 151 Charles W.A. Prior. Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625. Cambridge: Cambridge University Press, 2005. xiv + 294 pp. $85.00. Review by GRAHAM PARRY, UNIVERSITY OF YORK. Defining the Jacobean...

Parry, Graham

2006-01-01T23:59:59.000Z

184

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

185

ArKion Systems | Open Energy Information  

Open Energy Info (EERE)

ArKion Systems ArKion Systems Jump to: navigation, search Name ArKion Systems Address 230 Union Street Place New Bedford, Massachusetts Zip 02740 Sector Efficiency Product Two-way metering systems Website http://www.arkionsystems.com/ Coordinates 41.633948°, -70.927264° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.633948,"lon":-70.927264,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

186

ARS Energy Water and Sustainability Program  

Broader source: Energy.gov (indexed) [DOE]

ARS Energy Water and ARS Energy Water and Sustainability Program Sandy Morgan - Facilities Energy Manager * Research Arm of USDA * 3,200 buildings in 106 locations * Annual utility cost $45 million * Labs, greenhouses, animal facilities, agricultural buildings * 13.5 Million SF * $1 billion Agency * 50,000 large animals, 400,000 acres About ARS * Management support * Policies * Taking stock * Outreach * Reporting * Funding - Use UESCs then ESPCs * Network - Facility Energy Managers Our Approach Surveys * Meters - Fuels, account numbers, utilities * Water use * Sustainable buildings - Based on LEED EB V2.0 * Location energy and water consumption * Next surveys - Ag irrigation, land use, animals, refrigerants Lots of Data * Contact utilities - 30 energy audits, 10 UESCs, found a few errors * Contact DLA Energy and GSA

187

Ultraviolet radiation produced in low-energy Ar + Ar and Kr + Kr collisions  

Science Journals Connector (OSTI)

Absolute cross sections for the emission of ultraviolet resonance line radiations from Ar and Kr atoms resulting from Ar + Ar and Kr + Kr collisions are reported. The energy range covered extends from near the reaction thresholds to 150 eV in the center-of-mass system. The emission cross sections are found to have energy dependencies very similar to those exhibited by the total ionization cross sections for the same reactants. The techniques used to make the measurements are described and the results are discussed in terms of a current theoretical model of the interactions.

H. L. Rothwell; Jr.; R. C. Amme; B. Van Zyl

1979-03-01T23:59:59.000Z

188

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

189

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

190

Beta decay of 32Ar for fundamental tests  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

32 Ar(e + nu e ) decay to test isospin symmetry breaking corrections: fragmentation facility (MSU-NSCL) * Where does ATLAS fit in to this? A bridge from stability to 32 Ar...

191

FIANTD200725 arXiv:0712.3526v2  

E-Print Network [OSTI]

########### FIAN­TD­2007­25 arXiv:0712.3526v2 [hep­th] 26 Jan 2012 FIAN­TD­2007­25 arXiv: 0712.3526

192

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces  

SciTech Connect (OSTI)

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 Multiplication-Sign 10{sup 15}-1 Multiplication-Sign 10{sup 16} cm{sup -2}) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga{sub 2}O{sub 3} fractions were also observed on 'oxide free' samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

El-Atwani, Osman [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Allain, J. P. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Suslova, Anastassiya [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-12-17T23:59:59.000Z

193

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

194

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

195

Annealing of UV Ar+ and ArF excimer laser fabricated Bragg gratings: SMF-28e fiber  

Science Journals Connector (OSTI)

Fiber Bragg gratings fabricated in pristine SMF-28e fibers using pulsed ArF-excimer and cw 244-nm Ar+ laser were annealed using tempering rates from 0.0038 to 0.25 K/s....

Violakis, Georgios; Limberger, Hans G

2014-01-01T23:59:59.000Z

196

P1: ARS/ary P2: ARK December 26, 1997 16:38 Annual Reviews AR050-03  

E-Print Network [OSTI]

P1: ARS/ary P2: ARK December 26, 1997 16:38 Annual Reviews AR050-03 Annu. Rev. Neurosci. 1998. 21.annualreviews.org byUniversityofCalifornia-SanDiegoon01/04/07.Forpersonaluseonly. P1: ARS/ary P2: ARK December 26, 1997

Sereno, Martin

197

Decommissioning samples from the Ft. Lewis, WA, solvent refined coal pilot plant: chemical analysis and biological testing  

SciTech Connect (OSTI)

This report presents the results from chemical analyses and limited biological assays of three sets of samples from the Ft. Lewis, WA solvent refined coal (SRC) pilot plant. The samples were collected during the process of decommissioning this facility. Chemical composition was determined for chemical class fractions of the samples by using high-resolution gas chromatography (GC), high-resolution GC/mass spectrometry (MS) and high-resolution MS. Biological activity was measuring using both the histidine reversion microbial mutagenicity assay with Salmonella typhimurium, TA98 and an initiation/promotion mouse-skin tumorigenicity assay. 19 refs., 7 figs., 27 tabs.

Weimer, W.C.; Wright, C.W.

1985-10-01T23:59:59.000Z

198

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

199

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto…

1981-01-01T23:59:59.000Z

200

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
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201

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

202

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

203

Compton profiles of Ne, Ar, and Kr  

Science Journals Connector (OSTI)

Compton profiles of Ne, Ar, and Kr are calculated from ground-state energies and wave functions with full correlation contributions included. The latter is carried out by regarding atoms as inhomogeneous interacting electron-gas systems using the Kohn-Sham self-consistent scheme in the local-density approximation. The calculated values are brought closer to the experimental values from Hartree-Fock results. There are numerical problems for large atoms.

B. Y. Tong and L. Lam

1978-08-01T23:59:59.000Z

204

GaAs–based quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

205

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

206

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

W.A. W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project Final Environmental Impact Statement Summary February 2013 DOE/EIS-0473 Office of Fossil Energy National Energy Technology Laboratory INTENTIONALLY LEFT BLANK COVER SHEET Responsible Federal Agency: U.S. Department of Energy (DOE) Title: W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473) Location: Southeastern Texas, including Fort Bend, Wharton, and Jackson counties Contacts: For further information about this Environmental Impact Statement, contact: For general information on the DOE process for implementing the National Environmental Policy Act, contact: Mark W. Lusk U.S. Department of Energy National Energy Technology Laboratory 3610 Collins Ferry Road Morgantown, WV 26507-0880 (304) 285-4145 or Mark.Lusk@netl.doe.gov

207

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

NRG W.A. PARISH PCCS PROJECT NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT APPENDIX H BEG MODELING REPORT DOE/EIS-0473 NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT INTENTIONALLY LEFT BLANK 1 Reservoir modeling and simulation for estimating migration extents of injectate-CO 2 in support of West Ranch oilfield NEPA/EIS Gulf Coast Carbon Center, Bureau of Economic Geology, Jackson School of Geosciences, The University of Texas at Austin May 4, 2012 Summary It is anticipated that anthropogenic carbon dioxide (CO2-A) will be injected into the deep (5,000-6,000 ft below sea level) subsurface for enhanced oil recovery (EOR) at the West Ranch oilfield beginning in early 2015. The purpose of this report is to present reservoir modeling and simulation

208

The structure and ground state dynamics of Ar–IH  

Science Journals Connector (OSTI)

The structure and ground state dynamics of the atom–diatom dimer interaction between Ar and HI has been investigated by microwave and near infrared supersonic jet spectroscopy.Ab initio molecular orbital calculations were used to provide greater insight into the nature of the interaction. The ground state is shown to be in the isomeric form Ar–IH with R cm =3.9975(1)?Å ?=149.33(1)° for the normal isotopomer and R cm =3.9483(1)?Å ?=157.11(1)° for Ar–ID. The potential surface from an ab initio molecular orbital calculation was scaled and shifted to yield a nonlinear least-squares fit of the rovibrational state energies to the experimental data. The ground statepotential energy surface obtained in this manner has a barrier between the Ar–IH and Ar–HI isomers of 88.5 cm?1 with respect to the global minimum. Such calculations are also used to predict the presence of localized states in the secondary minimum associated with isomers Ar–HI and Ar–DI. Attempts to experimentally identify transitions associated with the latter were unsuccessful. The ground state Ar–IH isomeric structure contrasts with the corresponding ground state of the other members of the homologous series Ar–HX ( X=F Cl and Br) in which the Ar is bound to the proton.

A. McIntosh; Z. Wang; J. Castillo-Chará; R. R. Lucchese; J. W. Bevan; R. D. Suenram; A. C. Legon

1999-01-01T23:59:59.000Z

209

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkäll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekström; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kröll; R. Krücken; U. Köster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

210

Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere… (more)

Ebbers, André

2003-01-01T23:59:59.000Z

211

NETL: Advanced Research - The Advanced Research (AR) Program  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AR Program AR Program Advanced Research The Advanced Research (AR) Program Advanced Research Program Diagram CLICK ON GRAPHIC TO ENLARGE CLICK ON GRAPHIC TO ENLARGE AR pursues projects in several key areas that are considered to be of greatest relevance and potential benefit to advanced coal and power systems. Many of AR's projects focus on "breakthrough" technologies or novel applications, striving to balance high risk against the prospect of high payoff in terms of measurable benefits to coal and power systems technologies - improved efficiencies, lower costs, new materials, and new processes. AR manages a portfolio that includes pre-commercial projects that rely on NETL's in-house facilities and depth of expertise, as well as collaborative external arrangements that draw upon diverse outside

212

Word Pro - Untitled1  

Gasoline and Diesel Fuel Update (EIA)

Annual Energy Review 2011 TX CA FL LA IL OH PA NY GA IN MI NC VA NJ TN WA KY AL MO MN WI SC OK CO IA MD AZ MA MS KS AR OR NE UT CT WV NM NV AK WY ID ND ME MT SD NH HI...

213

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

214

F-7 U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

2014 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

215

F-5 U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

216

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI...

217

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

2013 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

218

padd map  

U.S. Energy Information Administration (EIA) Indexed Site

for Defense Districts AK HI WA OR CA NV AZ MT WY CO UT ID ND SD NE KS OK MO MN WI MI IL IN OH KY TN IA NM TX AR LA AL MS WV VA NC SC GA FL ME NH VT NY PA NJ MD DE MA CT RI...

219

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

2012 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

220

Microsoft Word - figure_99.doc  

Gasoline and Diesel Fuel Update (EIA)

Liquids Production." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL MS LA MO AR TX NM OK CO KS UT AZ WY NE IL IA MN WI ND SD ID MT WA OR NV CA HI AK MI Gulf...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

222

MHK Technologies/Atlantis AR 1000 | Open Energy Information  

Open Energy Info (EERE)

Atlantis AR 1000 Atlantis AR 1000 < MHK Technologies Jump to: navigation, search << Return to the MHK database homepage Atlantis AR 1000.jpg Technology Profile Primary Organization Atlantis Resources Corporation Project(s) where this technology is utilized *MHK Projects/Castine Harbor Badaduce Narrows *MHK Projects/Gujarat *MHK Projects/Tidal Energy Device Evaluation Center TIDEC Technology Resource Click here Current/Tidal Technology Type Click here Axial Flow Turbine Technology Readiness Level Click here TRL 7/8: Open Water System Testing & Demonstration & Operation Technology Description The AR series turbines are commercial scale Horizontal Axis Turbines designed for open ocean deployment in the harshest environments on the planet AR turbines feature a single rotor set with highly efficient fixed pitch blades The AR turbine is rotated as required with each tidal exchange using the on board yaw system This is done in the slack period between tides and fixed in place for the optimal heading for the next tide AR turbines are rated at 1MW 2 65m s of water flow velocity The AR 1000 the first of the AR series was successfully deployed and commissioned at the EMEC facility during the summer of 2011

223

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

224

Corinna Cisneros, S.M. Golam Mortuza, and Soumik Banerjee School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99163  

E-Print Network [OSTI]

Engineering, Washington State University, Pullman, WA 99163 Organic Photovoltaic Solar Cells: A Molecular of fossil fuel resources has lead to global energy crisis with an increasing effort in the scientific community to develop renewable energy technologies. Solar cell technology has generated significant

Collins, Gary S.

225

Proc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169184. Selecting Tests and Identifying Test Coverage Requirements for  

E-Print Network [OSTI]

of structural coverage crite­ ria. Our technique partitions an existing test suite into two subsets: testsProc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169­184. Selecting Tests and Identifying Test Coverage Requirements for Modified Software* Gregg Rothermel and Mary

Rothermel, Gregg

226

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

227

FIES ThAr atlas orders 157 79  

E-Print Network [OSTI]

FIES ThAr atlas orders 157 ­ 79 wavelength 3620 ­ 7260 °A Dec 2007 medium resolution file: FIql020001.fits John Telting Nordic Optical Telescope, La Palma, Spain #12;This ThAr atlas was made in Dec file used is FIql020001.fits. A halogen exposure (FIql020002.fits) was used to trace the orders

228

Stark parameter measurement of Ar II UV spectral lines  

Science Journals Connector (OSTI)

......parameter measurement of Ar-ii UV spectral lines S. Djurovic 1 M. T. Belmonte 2 R. J...of Stark parameters of Ar-ii spectral lines. We report 126 half-width and 111 shift...16-000 to 26-000-K. atomic data|line: profiles|plasmas| 1 INTRODUCTION Stark......

S. Djurovic; M. T. Belmonte; R. J. Peláez; J. A. Aparicio; S. Mar

2013-01-01T23:59:59.000Z

229

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
230

Diffusion of Kr Isotopes in Solid Ar  

Science Journals Connector (OSTI)

The diffusion coefficient D=D0e-Q0RT and isotope effect for Kr78 and Kr86 in solid Ar have been measured using a tracer technique. The activation energy QKr0 depends on the interchange parameter w, but is estimated to lie in the range 3500-3900 cal mole-1, with the most reliable w giving the lower value. Thus, the two calculated QKr0 (3853 and 4050 cal mole-1) for the vacancy mechanism using a two-body (12, 6) potential appear somewhat high, but in reasonable agreement with experiment. The isotope effect gives f?K?(D78D86-1)[(8678)12-1]=0.48±0.25 which, since QKr0?QAr0, suggests that ?K?0.6 for a single-vacancy mechanism. {Here f is the correlation factor and ?K?(?278?286-1)[(8678)12-1], where ?2 is the tracer jump rate.}

E. H. C. PARKER; B. L. SMITH; H. R. GLYDE

1969-12-15T23:59:59.000Z

231

CHEMILUMINESCENT CHEMI-IONIZATION: Ar* + Ca AND THE CaAr+ EMISSION SPECTRUM  

SciTech Connect (OSTI)

A flowing afterglow chemiluminescence apparatus has been used to analyze visible fluorescence in the Ar* ({sup 3}P{sub 2}{sup o}) + Ca ({sup 1}S{sub 0}) reaction. The rate constants for production of Ca{sup +} ({sup 2}P{sub 3/2}{sup o}) and Ca{sup +} ({sup 2}P{sub 1/2}{sup o}) were measured to be 1.6 x 10{sup -10} cm{sup 3}-molecule{sup -1} sec{sup -1} and 3.2 x 10{sup -11} cm{sup 3} molecule{sup -1} sec{sup -1}, respectively. These results demonstrate a transfer of the total electronic angular momentum polarization in Ar* tothe excited ion levels. The molecular band spectrum of the associative ionization product CaAr{sup +} (A{sup 2}{Pi}) was observed. Molecular fluorescence constituted 14% of the total fluorescence from all ion products. This spectrum was analyzed with a model (exp-Z4) potential, yielding, for the ground state, {Chi}{sup 2}{Sigma}{sup +}, R{sub e} = 2.8 {angstrom}, {omega}''{sub e} = 87 cm{sup -1}, and D''{sub e} = 1000 cm{sup -1}, and, for the A{sup 2}{Pi} state, R{sub e} = 2.6 {angstrom}, {omega}'{sub e} = 200 cm{sup -1}, and D'{sub e} = 4900 cm{sup -1}. The nascent internal state distribution in CaAr{sup +} is found to consist of a fairly narrow range of high vibrational levels. The analysis of spectra from chemiluminescent reaction is a well established technique for elucidating the product state distributions of elementary processes. In this paper, they use the analysis of the chemiluminescent chemi-ionization reactions between metastable argon atoms and calcium atoms to expose the dynamics of associative ionization (AI) and to measure the branching ratios for chemi-ionization into more than one product channel.

Hartman, Dennis C.; Winn, John S.

1980-09-01T23:59:59.000Z

232

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

233

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

234

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

235

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

236

Combined U-Th/He and 40Ar/39Ar geochronology of post-shield lavas from the Mauna Kea and Kohala volcanoes, Hawaii  

SciTech Connect (OSTI)

Late Quaternary, post-shield lavas from the Mauna Kea and Kohala volcanoes on the Big Island of Hawaii have been dated using the {sup 40}Ar/{sup 39}Ar and U-Th/He methods. The objective of the study is to compare the recently demonstrated U-Th/He age method, which uses basaltic olivine phenocrysts, with {sup 40}Ar/{sup 39}Ar ages measured on groundmass from the same samples. As a corollary, the age data also increase the precision of the chronology of volcanism on the Big Island. For the U-Th/He ages, U, Th and He concentrations and isotopes were measured to account for U-series disequilibrium and initial He. Single analyses U-Th/He ages for Hamakua lavas from Mauna Kea are 87 {+-} 40 ka to 119 {+-} 23 ka (2{sigma} uncertainties), which are in general equal to or younger than {sup 40}Ar/{sup 39}Ar ages. Basalt from the Polulu sequence on Kohala gives a U-Th/He age of 354 {+-} 54 ka and a {sup 40}Ar/{sup 39}Ar age of 450 {+-} 40 ka. All of the U-Th/He ages, and all but one spurious {sup 40}Ar/{sup 39}Ar ages conform to the previously proposed stratigraphy and published {sup 14}C and K-Ar ages. The ages also compare favorably to U-Th whole rock-olivine ages calculated from {sup 238}U - {sup 230}Th disequilibria. The U-Th/He and {sup 40}Ar/{sup 39}Ar results agree best where there is a relatively large amount of radiogenic {sup 40}Ar (>10%), and where the {sup 40}Ar/{sup 36}Ar intercept calculated from the Ar isochron diagram is close to the atmospheric value. In two cases, it is not clear why U-Th/He and {sup 40}Ar/{sup 39}Ar ages do not agree within uncertainty. U-Th/He and {sup 40}Ar/{sup 39}Ar results diverge the most on a low-K transitional tholeiitic basalt with abundant olivine. For the most alkalic basalts with negligible olivine phenocrysts, U-Th/He ages were unattainable while {sup 40}Ar/{sup 39}Ar results provide good precision even on ages as low as 19 {+-} 4 ka. Hence, the strengths and weaknesses of the U-Th/He and {sup 40}Ar/{sup 39}Ar methods are complimentary for basalts with ages of order 100-500 ka.

Aciego, S.M.; Jourdan, F.; DePaolo, D.J.; Kennedy, B.M.; Renne, P.R.; Sims, K.W.W.

2009-10-01T23:59:59.000Z

237

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

238

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

239

Comments on Diffusion of Kr Isotopes in Solid Ar  

Science Journals Connector (OSTI)

Recently, the isotope effect for Kr diffusion in Ar was found to be f?K?0. 48. The results are consistent with a divacancy diffusion mechanism with ?K?1.

J. J. Burton

1970-10-15T23:59:59.000Z

240

Collision-Induced Light Scattering in Gaseous Ar and Kr  

Science Journals Connector (OSTI)

Light scattering attributable to a change in polarizability produced in colliding pairs of atoms is observed in gaseous Ar and Kr. The experimental results are qualitatively accounted for by relations between the integrated intensity and the collision-induced polarizability.

J. P. McTague and George Birnbaum

1968-09-02T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

ARS 40 - Public Utilities and Carriers | Open Energy Information  

Open Energy Info (EERE)

Public Utilities and Carriers Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS 40 - Public Utilities and CarriersLegal...

242

ARS 12 - Courts and Civil Proceedings | Open Energy Information  

Open Energy Info (EERE)

and Civil Proceedings Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS 12 - Courts and Civil ProceedingsLegal Abstract...

243

A.R.S. § 9-462 | Open Energy Information  

Open Energy Info (EERE)

9-462 Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: A.R.S. 9-462Legal Published NA Year Signed or Took Effect 1986 Legal...

244

A.R.S. § 40-282 | Open Energy Information  

Open Energy Info (EERE)

to library Legal Document- StatuteStatute: A.R.S. 40-282Legal Abstract Power Plant and Transmission Line Siting Committee: Application for certificate; hearing; application upon...

245

A.R.S. § 40-281 | Open Energy Information  

Open Energy Info (EERE)

to library Legal Document- StatuteStatute: A.R.S. 40-281Legal Abstract Power Plant and Transmission Line Siting Committee: Certificate required before construction by public...

246

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

247

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

248

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

249

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

250

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

251

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

252

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

253

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90° misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

254

GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaN–InGaN LED devices. While most studies focus on output saturation known as ‘current droop’ from InGaN layer effects, we show an alike influence from p-type GaN’s inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

255

National Radon Database. Volume 5. The EPA/state residential radon surveys: AR, IL, MD, MT, MS, TX, VA, WA and the Eastern Cherokee Nation, 1990-1992 (5 1/4 inch 1. 2mb) (for microcomputers). Data file  

SciTech Connect (OSTI)

The National Radon Database (NRDB) was developed by the United States Environmental Protection Agency (USEPA) to distribute information in two recent radon surveys: the EPA/State Residential Radon Surveys and the National Residential Radon Survey. The National Residential Radon Surveys collected annual average radon measurements on all levels of approximately 5,700 homes nationwide. Information collected during survey includes a detailed questionnaire on house characteristics, as well as radon measurements. The radon survey data for Volume 6 is contained on two diskettes. The data diskettes are accompanied by comprehensive documentation on the design and implementation of the survey, the development and use of sampling weights, a summary of survey results, and information concerning the household questionnaire.

Not Available

1992-01-01T23:59:59.000Z

256

National Radon Database. Volume 5. The EPA/state residential radon surveys: AR, IL, MD, MT, MS, TX, VA, WA, and the Eastern Cherokee Nation, 1990-1992 (3 1/2 inch, 1. 44mb) (for microcomputers). Data file  

SciTech Connect (OSTI)

The National Radon Database (NRDB) was developed by the United States Environmental Protection Agency (USEPA) to distribute information in two recent radon surveys: the EPA/State Residential Radon Surveys and the National Residential Radon Survey. The National Residential Radon Surveys collected annual average radon measurements on all levels of approximately 5,700 homes nationwide. Information collected during survey includes a detailed questionnaire on house characteristics, as well as radon measurements. The radon survey data for Volume 6 is contained on two diskettes. The data diskettes are accompanied by comprehensive documentation on the design and implementation of the survey, the development and use of sampling weights, a summary of survey results, and information concerning the household questionnaire.

Not Available

1992-01-01T23:59:59.000Z

257

Acoustic Resonance Spectroscopy (ARS) Munition Classification System enhancements. Final report  

SciTech Connect (OSTI)

Acoustic Resonance Spectroscopy (ARS) is a non-destructive evaluation technology developed at the Los Alamos National Laboratory (LANL). This technology has resulted in three generations of instrumentation, funded by the Defense Special Weapons Agency (DSWA), specifically designed for field identification of chemical weapon (CW) munitions. Each generation of ARS instrumentation was developed with a specific user in mind. The ARS1OO was built for use by the U.N. Inspection Teams going into Iraq immediately after the Persian Gulf War. The ARS200 was built for use in the US-Russia Bilateral Chemical Weapons Treaty (the primary users for this system are the US Onsite Inspection Agency (OSIA) and their Russian counterparts). The ARS300 was built with the requirements of the Organization for the Prohibition of Chemical Weapons (OPCW) in mind. Each successive system is an improved version of the previous system based on learning the weaknesses of each and, coincidentally, on the fact that more time was available to do a requirements analysis and the necessary engineering development. The ARS300 is at a level of development that warrants transferring the technology to a commercial vendor. Since LANL will supply the computer software to the selected vendor, it is possible for LANL to continue to improve the decision algorithms, add features where necessary, and adjust the user interface before the final transfer occurs. This paper describes the current system, ARS system enhancements, and software enhancements. Appendices contain the Operations Manual (software Version 3.01), and two earlier reports on enhancements.

Vela, O.A.; Huggard, J.C.

1997-09-18T23:59:59.000Z

258

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

259

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

Where Does My Drinking Water Come From? Where Does My Drinking Water Come From? Riverton, Wyoming, Processing Site F A C T S H E E T ENERGY Legacy Management U.S. DEPARTMENT OF This fact sheet provides information about the Alternative Water Supply System and domestic wells at the Uranium Mill Tailings Radiation Control Act of 1978 Title I processing site at Riverton, Wyoming. The Riverton site is managed by the U.S. Department of Energy Office of Legacy Management. Where Is the Riverton Site? The former Riverton, Wyoming, Processing Site is in Fremont County, 2 miles southwest of the town of Riverton and within the boundaries of the Wind River Indian Reservation (Northern Arapaho and Eastern Shoshone). Why Is It a "Site"? A uranium- and vanadium-ore-processing mill operated on the property from 1958 to 1963. Milling operations created

260

SEATTLE, WA ctober 1974  

E-Print Network [OSTI]

nektol n t"c C08 ul \\.\\ t,,.. !" \\ tIn4 UVt'r I I d (l E riltal Inl \\\\ashmptcn, sprl .. lnti ill )f If

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Production of 37Ar in The University of Texas TRIGA reactor facility  

SciTech Connect (OSTI)

The detection of {sup 37}Ar is important for on-site inspections for the Comprehensive Nuclear-Test-Ban Treaty monitoring. In an underground nuclear explosion this radionuclide is produced by {sup 40}Ca(n,{alpha}){sup 37}Ar reaction in surrounding soil and rock. With a half-life of 35 days, {sup 37}Ar provides a signal useful for confirming the location of an underground nuclear event. An ultra-low-background proportional counter developed by Pacific Northwest National Laboratory is used to detect {sup 37}Ar, which decays via electron capture. The irradiation of Ar gas at natural enrichment in the 3L facility within the Mark II TRIGA reactor facility at The University of Texas at Austin provides a source of {sup 37}Ar for the calibration of the detector. The {sup 41}Ar activity is measured by the gamma activity using an HPGe detector after the sample is removed from the core. Using the {sup 41}Ar/{sup 37}Ar production ratio and the {sup 41}Ar activity, the amount of {sup 37}Ar created is calculated. The {sup 41}Ar decays quickly (half-life of 109.34 minutes) leaving a radioactive sample of high purity {sup 37}Ar and only trace levels of {sup 39}Ar.

Egnatuk, Christine M.; Lowrey, Justin; Biegalski, S.; Bowyer, Ted W.; Haas, Derek A.; Orrell, John L.; Woods, Vincent T.; Keillor, Martin E.

2011-06-19T23:59:59.000Z

262

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

263

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

264

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

265

E v e n t s & T o p i c s i n R e n e wa b l e E n...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

266

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

267

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

268

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

269

arXiv:1012.4570v1[astro-ph.GA]21Dec2010 Herschel WISH program  

E-Print Network [OSTI]

of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, UK 6 INAF - Osservatorio Astrofisico di Arcetri Council Canada, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Vic- toria, BC V9E 2E7, Canada 10 Department of Physics and Astronomy, University of Victoria, Victoria, BC V8P 1A1, Canada 11

270

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

271

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

272

Arçelik A.Åž: Compliance Determination (2010-SE-0105) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Arçelik A.Ş: Compliance Determination (2010-SE-0105) Arçelik A.Ş: Compliance Determination (2010-SE-0105) Arçelik A.Ş: Compliance Determination (2010-SE-0105) August 30, 2010 DOE issued a Notice of Compliance Determination after test results revealed that Arçelik's Blomberg BRFB1450 refrigerator-freezer complies with the applicable energy conservation standards. DOE reviewed test results from Arçelik and also performed DOE testing on four units of the product. The DOE had issued a subpoena for information and production of documents requesting test data from Arçelik A.Ş, after DOE received information indicating that Arçelik's Blomberg BRFB1450 model refrigerator-freezer exceeds the applicable Federal energy conservation standards. Arçelik A.Ş: Compliance Determination (2010-SE-0105) More Documents & Publications

273

Smartphone-Mediated Tourist Experiences: Understanding the Influence of Augmented Reality (AR) Applications in Tourism  

E-Print Network [OSTI]

The synergy of smartphone, mobile applications (apps) and Augmented Reality (AR) technology has the potential to mediate tourism experiences to great extents. The advent of AR apps on smartphones provides a dynamic solution for tourists by helping...

Anuar, Faiz Izwan

2013-04-25T23:59:59.000Z

274

Muon capture in Ar. The muon lifetime and yields of Cl isotopes  

Science Journals Connector (OSTI)

The time and energy spectra of ? rays, accompanying negative muon capture in a 40Ar target, have been measured using Ge detectors. The results of measuring the muon lifetime in 40Ar and yields of different Cl and...

A. V. Klinskikh; S. Brianson; V. B. Brudanin…

2008-06-01T23:59:59.000Z

275

STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN  

Broader source: Energy.gov (indexed) [DOE]

STATEM!NT''OF CONSIDEAAT10NS STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN DOE PROPOSAL NO.OE-EE0000412 W(A} 2009-:060 The OhlipC1'!ve of this project Is the and comt'nercialization of a two-phase soluttofrfQf USe with The 1 lM,C'l_""""P H'tn(;lPI'" PJJ1'l.nn""". refrig1':'rant tooling solution provides certain improvements compared to conventional air-<:ooling syslems and water-cooling systems, The totalantfetpated cost the is $901,678 with the Petitl(};l)er approximately 19.% cost sm:tre, $262,191. Thiswaive(is contingent upo.n the Petitioner rrH~intaining the foregoing cost over tneCQUfse the grant As in its wai'\l\;f petition, the ~etitfoner isa leading global supplier of air conditioning and

276

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

277

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

278

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

279

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und… (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

280

Advanced Robotics 25 (2011) 699715 brill.nl/ar  

E-Print Network [OSTI]

Advanced Robotics 25 (2011) 699­715 brill.nl/ar Full paper Design and Application of a Wire attention due to the absence of practical applications. However, in the case of blast-cleaning and painting for the entire transverse web floor with a range of 2­3 m. Since the self-traveling robotic platform is located

Kim, Jongwon

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

SPECIA L SECTION D EP AR TM ENTS  

E-Print Network [OSTI]

#12;#12;SPECIA L SECTION D EP AR TM ENTS 20 Report on Research 22 Spotlight on Students 34 Focus of Phi Ep's national organization. Two lettersin particular stood outbecause they reported that the brothers of Phi Ep weren't the onlyfraternities at UConn to take a similarstand. N.C.Heilman '44 (ENG

Holsinger, Kent

282

DESY 07176 arXiv:0710.2602v1  

E-Print Network [OSTI]

########### DESY 07­176 arXiv:0710.2602v1 [hep­ex] 13 Oct 2007 Prospects to Measure the Higgs Boson - Germany The process e + e ! ZH allows to measure the Higgs boson in the recoil mass spectrum against the Z boson without any assumptions on the Higgs boson decay. We performed a full simulation

283

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

284

The Navigation and Control technology inside the AR.Drone micro UAV  

E-Print Network [OSTI]

The Navigation and Control technology inside the AR.Drone micro UAV Pierre-Jean Bristeau François- mercialized micro Unmanned Aerial Vehicle (UAV), the AR.Drone, which cost and performance are unprecedented company started a project named AR.Drone aiming at producing a micro Unmanned Aerial Vehicle (UAV

285

Charge Transport in Solid and Liquid Ar, Kr, and Xe  

Science Journals Connector (OSTI)

This paper reports an investigation of the drift velocity of excess electrons in solid and liquid Ar, Kr, and Xe. After purification of the commercially available gas, thin crystal specimens (100-600 ?m) were grown from the liquid between parallel electrodes in a chamber attached to a miniature cryostat. Pulses of 40-keV electrons were used to generate the charge carriers in both liquids and solids. This technique overcomes the limitations inherent in previously applied methods and has made it possible to investigate the drift velocity over a range of applied fields from 10 V cm-1 to 100 kV cm-1. Near the triple point, the low-field mobility ?0 in solid Ar, Kr, and Xe was found to be 1000, 3700, and about 4500 cm2sec-1V-1, respectively. In the liquids the corresponding mobilities were 475, 1800, and 2200 cm2sec-1V-1. The temerature dependence of ?0 has been measured on Ar crystals, and the results indicate that ?0 is determined by acoustic scattering. The electron lifetime appears to be controlled predominantly by oxygen impurities. Pronounced hot-electron effects are observed in drift-velocity—versus—field curves for both liquids and solids, and their fit to the Shockley hot-electron theory has been investigated. In the high-field region all the curves show an almost complete saturation with field. The theory of Cohen and Lekner applied to liquid Ar fits the results over most of the field range, suggesting that the deviations from the Shockley theory at higher electron temperatures are associated with an increase in the value of the structure factor. In solid Ar or Kr, positive holes do not appear to be mobile, but in Xe crystals a hole mobility of about 2×10-2 cm2sec-1V-1 was found. The implications of these results are briefly discussed.

L. S. Miller; S. Howe; W. E. Spear

1968-02-15T23:59:59.000Z

286

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

287

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

288

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

289

Evaluation of sintering effects on SiC incorporated UO2 kernels under Ar and Ar-4%H2 environments  

SciTech Connect (OSTI)

Silicon carbide (SiC) is suggested as an oxygen getter in UO2 kernels used for TRISO particle fuels to lower oxygen potential and prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that internal gelation process can be used to incorporate SiC in urania fuel kernels. Sintering in either Ar or Ar-4%H2 at 1500 C lowered the SiC content in the UO2 kernels to some extent. Formation of UC was observed as the major chemical phase in the process, while other minor phases such as U3Si2C2, USi2, U3Si2, and UC2 were also identified. UC formation was presumed to be occurred by two reactions. The first was the SiC reaction with its protective SiO2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO2 to form UC. The second process was direct UO2 reaction with SiC grains to form SiO, CO, and UC, especially in Ar-4%H2. A slightly higher density and UC content was observed in the sample sintered in Ar-4%H2, but the use of both atmospheres produced kernels with ~95% of theoretical density. It is suggested that incorporating CO in the sintering gas would prevent UC formation and preserve the initial SiC content.

Silva, Chinthaka M [ORNL] [ORNL; Lindemer, Terrence [Harbach Engineering and Solutions] [Harbach Engineering and Solutions; Hunt, Rodney Dale [ORNL] [ORNL; Collins, Jack Lee [ORNL] [ORNL; Terrani, Kurt A [ORNL] [ORNL; Snead, Lance Lewis [ORNL] [ORNL

2013-01-01T23:59:59.000Z

290

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

291

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

292

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

293

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

294

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?²Ga to the first excited O? state in ?²Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

295

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

296

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

297

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

298

Sublimation Pressures of Solid Ar, Kr, and Xe  

Science Journals Connector (OSTI)

Results of an experiment to measure the sublimation pressures of Ar, Kr, and Xe over wide temperature and pressure ranges are presented. Data are reported from near the respective triple points to about (2.3 × 10-6 Torr, 25.506 K) for Ar; (2.1 × 10-4 Torr, 45.130 K) for Kr; (3.8 × 10-4 Torr, 70.075 K) for Xe. Pressures were measured with a Hg manometer, a McLeod gauge, and a calibrated Bourdon gauge. The data have been corrected for thermomolecular flow and streaming. Temperatures were measured with a N.B.S.-calibrated Pt resistance thermometer. The application of the law of corresponding states is investigated. Values for static lattice energy, geometric mean of the lattice vibrational spectrum, heat of sublimation, and lattice vibrational energy are calculated using theoretical sublimation pressure curves.

Charles W. Leming and Gerald L. Pollack

1970-10-15T23:59:59.000Z

299

Photoemission from Ar, Kr, and Xe on Pb(111)  

Science Journals Connector (OSTI)

Angle-resolved photoelectron spectra were measured for the valence p states of Ar, Kr, and Xe on Pb(111). The thickness of the rare-gas layers was varied between 0.05 and about 5 monolayers. For each layer the work function was deduced from the width of the photoelectron energy-distribution curve. On Pb(111) tightly packed monolayers were prepared, exhibiting energy dispersion of the valence p states, which is discussed in the framework of the known two-dimensional band structure. The spectral features are very sharp, as can be seen from the full width at half maximum value of 175 meV for the Xe 5p1/2 peak. For Xe the submonolayer regime was also studied, where single atoms are adsorbed together with small three-dimensional clusters. The single atoms exhibit no dispersion and no split of the p3/2 level into two sublevels. This demonstrates that these features are derived from lateral interaction in the rare-gas monolayer. On top of the monolayer a second completely filled layer can be prepared for Ar, Kr, and Xe. The second-layer shift in binding energy is 720 meV for Ar and Kr and 525 meV for Xe. It is about 6 times as large as the work-function changes induced by the monolayer. This observation can only be explained in the known final-state interpretation of the layer-dependent shifts in binding energy.

K. Jacobi

1988-09-15T23:59:59.000Z

300

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

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301

Department of Political Science Box 353530 University of Washington Seattle, WA 98195-3530 phone: (206) 543-2780 fax: (206) 685-2146 www.polisci.washington.edu  

E-Print Network [OSTI]

Department of Political Science · Box 353530 · University of Washington · Seattle, WA 98195-3530 phone: (206) 543-2780 · fax: (206) 685-2146 · www.polisci.washington.edu Highlights Political science rating in the Princeton Review 2010 list of "great schools to study political science." The department

Anderson, Richard

302

40Ar/39Ar ages and palaeomagnetism of transitionally magnetized volcanic rocks in the Society Islands, French Polynesia: Raiatea excursion in the upper-Gauss Chron  

Science Journals Connector (OSTI)

......Experiment and data analysis Age determination...irradiated at the JMTR reactor with fast neutron...air. The blank analysis was conducted after...MP01 fulfilled the reliability criteria, respectively...laser-heating 40Ar/39Ar analysis: case study for...facility of the JMTR reactor, Japan, Geochem......

Y. Yamamoto; O. Ishizuka; M. Sudo; K. Uto

2007-04-01T23:59:59.000Z

303

Two-phase Cryogenic Avalanche Detectors with THGEM and hybrid THGEM/GEM multipliers operated in Ar and Ar+N2  

E-Print Network [OSTI]

Two-phase Cryogenic Avalanche Detectors (CRADs) with GEM and THGEM multipliers have become an emerging potential technique for charge recording in rare-event experiments. In this work we present the performance of two-phase CRADs operated in Ar and Ar+N2. Detectors with sensitive area of 10x10 cm2, reaching a litre-scale active volume, yielded gains of the order of 1000 with a double-THGEM multiplier. Higher gains, of about 5000, have been attained in two-phase Ar CRADs with a hybrid triple-stage multiplier, comprising of a double-THGEM followed by a GEM. The performance of two-phase CRADs in Ar doped with N2 (0.1-0.6%) yielded faster signals and similar gains compared to the operation in two-phase Ar. The applicability to rare-event experiments is discussed.

A. Bondar; A. Buzulutskov; A. Dolgov; A. Grebenuk; E. Shemyakina; A. Sokolov; D. Akimov; A. Breskin; D. Thers

2012-10-02T23:59:59.000Z

304

40Ar/39Ar dating of microgram feldspar grains from the paired feldspathic achondrites GRA 06128 and 06129  

Science Journals Connector (OSTI)

Abstract 40Ar/39Ar ages of single feldspar grains from the paired meteorites Graves Nunatak 06128 (GRA8; 8 grains) and 06129 (GRA9; 26 grains) are presented. Plateau ages (?70% of the 39Ar released) ranged from 4000 to 4600 Ma with an average 1-? uncertainty of ±90 Ma. The most precise ages obtained were 4267 ± 17 Ma for a grain from GRA8 and 4437 ± 19 Ma and 4321 ± 18 Ma for two grains from GRA9. Isotope correlation diagrams yield less precise ages ranging from 3800 to 5200 Ma with an average 1-? uncertainty of 250 Ma; they indicate a negligible trapped component. Plateau ages, integrated total fusion ages, and isochron ages are internally concordant at the 95% confidence level. The distribution of the plateau ages for GRA9 is bimodal with peaks at 4400 and 4300 Ma. In contrast, the plateau age distribution for GRA8 peaks at about 4260 Ma with broad wings extending toward younger and older ages. To explain the distributions of grain ages we prefer a scenario that includes a major post-formation event about 4400 Ma ago and a later melt intrusion event that heated GRA8 more than some parts of GRA9.

Fara N. Lindsay; Gregory F. Herzog; Jisun Park; Jeremy S. Delaney; Brent D. Turrin; Carl C. Swisher III

2014-01-01T23:59:59.000Z

305

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

306

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

307

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

308

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

309

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

310

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

311

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

312

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

313

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

314

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

315

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

316

OSTI Announces Alert Service for arXiv Patrons | OSTI, US Dept of Energy,  

Office of Scientific and Technical Information (OSTI)

Announces Alert Service for arXiv Patrons Announces Alert Service for arXiv Patrons March 2005 Oak Ridge, TN - The Office of Scientific and Technical Information (OSTI) is pleased to announce implementation of an Alert Service that serves patrons of arXiv, a source in the fields of physics, mathematics, non-linear science, computer science, and quantitative biology. ArXiv, a service of Cornell University Library System, is one of the sources included in OSTI's E-print Network. Through this Alert Service, patrons can subscribe to be automatically notified of the latest information posted on arXiv, as well as other e-print sources in the E-print Network. A special interface is provided for arXiv patrons through the E-print Network. E-print Network is a vast, integrated network of electronic scientific and

317

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

318

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

319

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

320

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 2×2 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

322

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

323

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

324

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

325

E-Print Network 3.0 - ar-rich source gas Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

argon (Ar)-rich atmosphere... in natural gas bubble plumes: observations from the Coal Oil Point marine hydrocarbon ... Source: California at Santa Barbara, University of -...

326

E-Print Network 3.0 - ar injection experiment Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in 553AR. The cumulative steam injected after 400 days on injection and the injection rate both similar... ... Source: Patzek, Tadeusz W. - Department of Petroleum and...

327

Radial Mass Fraction Distributions In Ar+N Plasmas Produced In A Wall-Stabilized Arc  

SciTech Connect (OSTI)

Radial distributions of Ar mass fractions in plasmas produced in a wall-stabilized arc have been studied. Measurements have been performed for seven different mixtures of Ar+N2. The obtained results show that the radial distributions of Ar mass fractions strongly depend on the chemical composition of the plasma. In plasmas containing large amount of Ar the distributions have local minima at the arc axis (in high temperature plasma regions), whereas in plasmas consisting mainly of nitrogen the distributions reveal maxima on the discharge axis.

KsiaPzek, Ireneusz [Institute of Physics, Opole University, ul. Oleska 48, 45-052 Opole (Poland)

2006-01-15T23:59:59.000Z

328

SPPI ORIGINAL PAPER October 11, 2011 GROSS ERRORS IN THE IPCC-AR4  

E-Print Network [OSTI]

SPPI ORIGINAL PAPER October 11, 2011 GROSS ERRORS IN THE IPCC-AR4 REPORT REGARDING PAST & FUTURE FIGURE AND GEORGE WILL QUOTE.....................

Gray, William

329

Oxygen-driven relaxation processes in pre-irradiated Ar cryocrystals  

E-Print Network [OSTI]

Excitations of Solid Oxygen ?in Russian?, B. I. Verkin andNUMBER 11 NOVEMBER 2006 Oxygen-driven relaxation processes? Relaxation processes in oxygen-containing Ar cryocrystals

Savchenko, E. V; Belov, A. G; Gumenchuk, G. B; Ponomaryov, A. N; Bondybey, V. E

2006-01-01T23:59:59.000Z

330

E-Print Network 3.0 - ar-bicat diimine platinum Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: ar-bicat diimine platinum Page: << < 1 2 3 4 5 > >> 1 Chemistry Department 2011 Summer Research Program Summary: are investigating the interaction...

331

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

332

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

333

The sup 40 Ar/ sup 39 Ar thermochronology of the eastern Mojave Desert, California, and adjacent western Arizona with implications for the evolution of metamorphic core complexes  

SciTech Connect (OSTI)

The application of {sup 40}Ar/{sup 39}Ar thermochronology provides information about the timing and nature of thrusting, plutonism, metamorphism, denudation, and detachment faulting. The {sup 40}Ar/{sup 39}Ar ages of 175 to 125 Ma from the Clipper, Piute, Turtle, Mohave, Bill Williams, and Hualapai Mountains are interpreted to be the result of a middle Mesozoic thermal event(s) caused by crustal thickening. The {sup 40}Ar/{sup 39}Ar data from the Clipper and Piute Mountains suggest that this thermal event was followed by a period of cooling at rates of 1-5C/m.y. Orogenesis culminated during the Late Cretaceous when rocks exposed in the Old Woman-Piute, Chemehuevi, and Sacramento Mountains attained temperatures >500C which reset the K-Ar systems of minerals from Proterozoic rocks. High-grade metamorphism in the Old Woman Mountains area was caused by the intrusion of the Old Woman-Piute batholith at 73 {plus minus} 1 Ma. Cooling rates following batholith emplacement in the Old Woman Mountains were {approximately}100C/m.y. between 73 and 70 Ma and 5-10C/m.y. from 70 to {approximately}30 Ma. By 30 Ma, rocks exposed in the Old Woman-Piute, Marble, Ship, Clipper, and Turtle Mountains were below {approximately}100C. The {sup 49}Ar/{sup 39}Ar ages from the Sacramento Mountains suggest that mylonization caused by the onset of regional extension occurred at 23 {plus minus} 1 Ma. When extension started in the Chemehuevi Mountains, rocks exposed in the southwestern and northeastern portions of footwall to the Chemehuevi detachment fault were at {approximately}180C and {approximately}350C, respectively. Unroofing of the footwalls to detachment faults in the Sacramento and Chemehuevi Mountains resulted in average cooling rates of 10-50C/m.y. between 22 and 15 Ma.

Foster, D.A.; Harrison, T.M. (State Univ. of New York, Albany (USA)); Miller, C.F. (Vanderbilt Univ., Nashville, TN (USA)); Howard, K.A. (Geological Survey, Menlo Park, CA (USA))

1990-11-10T23:59:59.000Z

334

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

335

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

336

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

337

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

338

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

339

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

340

Characterization of the environmental fate of Bacillus thuringiensis var. kaurstaki (Btk) after pest eradication efforts in Seattle, WA and Fairfax county, VA  

SciTech Connect (OSTI)

Understanding the fate of biological agents in the environment will be critical to recovery and restoration efforts after a biological attack. Los Alamos National Laboratory (LANL) is conducting experiments in the Seattle, WA and Fairfax County, VA areas to study agent fate in urban environments. As part of their gypsy moth suppression efforts, Washington State and Fairfax County have sprayed Bacillus thuringiensis var. kurstaki (Btk), a common organic pesticide for decades. Many of the spray zones have been in or near urban areas. LANL has collected surface and bulk samples from historical Seattle spray zones to characterize how long Btk persists at detectable levels in the environment, and how long it remains viable in different environmental matrices. This work will attempt to address three questions. First, how long does the agent remain viable at detectable levels? Second, what is the approximate magnitude and duration of resuspension? And third, does the agent transport into buildings? Data designed to address the first question will be presented. Preliminary results indicate Btk remains viable in the environment for at least two years.

Ticknor, Lawrence [Los Alamos National Laboratory; Van Cuyk, Sheila M [Los Alamos National Laboratory; Deshpande, Alina [Los Alamos National Laboratory; Omberg, Kristin M [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Structure of a Si(100)2×2-Ga surface  

Science Journals Connector (OSTI)

The 2×2 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

342

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

343

Very-high-order harmonic generation from Ar atoms and Ar+ ions in superintense pulsed laser fields: An ab initio self-interaction-free time-dependent density-functional approach  

E-Print Network [OSTI]

We present an ab initio nonpertubative investigation of the mechanisms responsible for the production of very-high-order harmonic generation (HHG) from Ar atoms and Ar+ ions by means of the self-interaction-free time-dependent density...

Carrera, Juan J.; Chu, Shih-I; Tong, X. M.

2005-06-21T23:59:59.000Z

344

arXiv:0904.0927v1[math.AG]6Apr2009 CALCULATING THE PARABOLIC CHERN CHARACTER OF A  

E-Print Network [OSTI]

characters chP ar 1 (E), chP ar 2 (E) and chP ar 3 (E). The basic idea is to use the formula given in [IS2

Simpson, Carlos

345

Abstract 3574: Studies of castrate resistant 22Rv1 cells identifies AR regulated interrelated networks of transcription factors, co-regulators, chromatin, and nuclear scaffolding proteins.  

Science Journals Connector (OSTI)

...cells identifies AR regulated interrelated networks of transcription...which the AR dominates this process is unclear. To identify...analysis also revealed that interrelated networks of transcription...cells identifies AR regulated interrelated networks of transcription...

Maria Mudryj; Stephen J. Libertini; and Alan P. Lombard

2013-04-15T23:59:59.000Z

346

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN p–i–n solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying…

2013-05-01T23:59:59.000Z

347

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

348

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter…

349

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

350

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

351

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

352

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

353

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

354

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

355

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

356

The Effectiveness of an AR-based Context-Aware Assembly Support System in Object Assembly  

E-Print Network [OSTI]

The Effectiveness of an AR-based Context-Aware Assembly Support System in Object Assembly Bui Minh University ABSTRACT This study evaluates the effectiveness of an AR-based context- aware assembly support recognize error and comple- tion states at each step. Naturally, the effectiveness of such context- aware

LaViola Jr., Joseph J.

357

The use of surrounding visual context in handheld AR: device vs. user perspective rendering  

Science Journals Connector (OSTI)

The magic lens paradigm, a commonly used descriptor for handheld Augmented Reality (AR), presents the user with dual views: the augmented view (magic lens) that appears on the device, and the real view of the surroundings (what the user can see around ... Keywords: ar, dual views, dual-view, magic lens, user-perspective

Klen ?opi? Pucihar; Paul Coulton; Jason Alexander

2014-04-01T23:59:59.000Z

358

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

359

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

360

New accurate measurement of 36ArH+ and 38ArH+ ro-vibrational transitions by high resolution IR absorption spectroscopy  

E-Print Network [OSTI]

The protonated Argon ion, $^{36}$ArH$^{+}$, has been identified recently in the Crab Nebula (Barlow et al. 2013) from Herschel spectra. Given the atmospheric opacity at the frequency of its $J$=1-0 and $J$=2-1 rotational transitions (617.5 and 1234.6 GHz, respectively), and the current lack of appropriate space observatories after the recent end of the Herschel mission, future studies on this molecule will rely on mid-infrared observations. We report on accurate wavenumber measurements of $^{36}$ArH$^{+}$ and $^{38}$ArH$^{+}$ rotation-vibration transitions in the $v$=1-0 band in the range 4.1-3.7 $\\mu$m (2450-2715 cm$^{-1}$). The wavenumbers of the $R$(0) transitions of the $v$=1-0 band are 2612.50135$\\pm$0.00033 and 2610.70177$\\pm$0.00042 cm$^{-1}$ ($\\pm3\\sigma$) for $^{36}$ArH$^{+}$ and $^{38}$ArH$^{+}$, respectively. The calculated opacity for a gas thermalized at a temperature of 100 K and a linewidth of 1 km.s$^{-1}$ of the $R$(0) line is $1.6\\times10^{-15}\\times N$($^{36}$ArH$^+$). For column densities ...

Cueto, M; Barlow, M J; Swinyard, B M; Herrero, V J; Tanarro, I; Domenech, J L

2014-01-01T23:59:59.000Z

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361

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gómez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

362

Multiphoton Double Ionization of Ar in Intense Extreme Ultraviolet Laser Fields Studied by Shot-by-Shot Photoelectron Spectroscopy  

SciTech Connect (OSTI)

Photoelectron spectroscopy has been performed to study the multiphoton double ionization of Ar in an intense extreme ultraviolet laser field (h{nu}{approx}21 eV, {approx}5 TW/cm{sup 2}), by using a free electron laser (FEL). Three distinct peaks identified in the observed photoelectron spectra clearly show that the double ionization proceeds sequentially via the formation of Ar{sup +}: Ar+h{nu}{yields}Ar{sup +}+e{sup -} and Ar{sup +}+2h{nu}{yields}Ar{sup 2+}+e{sup -}. Shot-by-shot recording of the photoelectron spectra allows simultaneous monitoring of FEL spectrum and the multiphoton process for each FEL pulse, revealing that the two-photon ionization from Ar{sup +} is significantly enhanced by intermediate resonances in Ar{sup +}.

Hikosaka, Y. [Department of Environmental Science, Niigata University, Niigata 950-2181 (Japan); Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Graduate University for Advanced Studies (SOKENDAI), Okazaki 444-8585 (Japan); RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Fushitani, M.; Hishikawa, A. [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Graduate University for Advanced Studies (SOKENDAI), Okazaki 444-8585 (Japan); RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya 464-8602 (Japan); Matsuda, A. [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya 464-8602 (Japan); Tseng, C.-M. [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Shigemasa, E. [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Graduate University for Advanced Studies (SOKENDAI), Okazaki 444-8585 (Japan); RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Nagasono, M.; Tono, K.; Yabashi, M.; Ishikawa, T. [RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Togashi, T.; Ohashi, H.; Kimura, H. [RIKEN, XFEL Project Head Office, Sayo, Hyogo 679-5148 (Japan); Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198 (Japan); Senba, Y. [Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198 (Japan)

2010-09-24T23:59:59.000Z

363

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

364

NOTES AND COMMENTS REVERE COPPER AR! BRASS DETROIT, MICHIGAN  

Office of Legacy Management (LM)

* .t-* * .t-* . * * - -. _ _ ,.. .I AIT. 4 NOTES AND COMMENTS REVERE COPPER AR! BRASS DETROIT, MICHIGAN A preliminary (screening) survey was conducted in several areas of the Revere Copper and Brass Facility, 5851 W. Jefferson Street, Detroit, Michigan. The survey was conducted by the ANL Radiological Survey Group on April 22, 1981. The Survey Group, consisting of W. Smith, R. Mundis, K. Flynn (all of ANI), and E. Jascewsky (DOE-CH) met on site with J. Evans (Safety Engineer), D. Tratt (Asst. Engineer), -- M~37~se'Zanak~(Aeth6ds~De!@iFXi%itXiupe~isox$ and E. Betancourt (Personnel Manager) to discuss what information was available concerning the operations that transpired at the facility during the Manhattan Engineering District Atomic Energy Commission (MED/AEC) era. MrYWtisffaliab indicated that

365

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

366

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

367

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

368

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

369

Reactions of Ar40 with Dy160, Dy164, and Yb174  

Science Journals Connector (OSTI)

Excitation functions for nuclear reactions induced by Ar40 ions were measured for the reactions Dy164(Ar40,xn)Po204-x, Dy160(Ar40,xn)Po200-x, Yb174(Ar40,xn)Ra214-x, and Yb174(Ar40,pxn)Fr213-x. For all of the systems studied, the (Ar,xn) reactions only make up a small part of the total reaction cross section of ?2 b; the largest cross sections encountered in each system were (at the peaks of the respective excitation functions) 30 mb for Dy164(Ar,5n), 10 mb for Dy160(Ar,4n), and 5 mb for Yb174(Ar,4n-5n). The probabilities Pxn of neutron emission in the compound systems Po204 and Po200 were found to be very different, with respective maximum probabilities for the emission of four, five, and six neutrons of 0.064, 0.035, and 0.016 for Po204, and 0.010, 0.0025, and 0.0003 for Po200. Calculations performed with a statistical-model code, which includes angular-momentum effects and fission competition, are able to reproduce the shapes and magnitudes of the experimental excitation functions, although there is a systematic energy difference, ?10 MeV, between theory and the data. These model-dependent analyses describe in detail how the particle evaporation and fission deexcitation modes vary with angular momentum and excitation energy. The observed large differences in Pxn values for Po204 and Po200 are seen to arise from the small difference, ?1.2 MeV, between the values of Sn-Bf, the difference of neutron-separation and fission-barrier energies, in each compound system.NUCLEAR REACTIONS Dy160(Ar40,xn)Po200-x, Dy164(Ar40,xn)Po204-x, Yb174(Ar40,xn)Ra214-x, and Yb174(Ar40,pxn)Fr213-x. E=160-270 MeV; measured ?(E) for product nuclei that are ?-particle radioactive; compared with statistical-model calculations.

Y. LeBeyec; R. L. Hahn; K. S. Toth; R. Eppley

1976-09-01T23:59:59.000Z

370

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

371

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

372

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

373

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

374

GAS AND DUST ABSORPTION IN THE DoAr 24E SYSTEM  

SciTech Connect (OSTI)

We present findings for DoAr 24E, a binary system that includes a classical infrared companion. We observed the DoAr 24E system with the Spitzer Infrared Spectrograph (IRS), with high-resolution, near-infrared spectroscopy of CO vibrational transitions, and with mid-infrared imaging. The source of high extinction toward infrared companions has been an item of continuing interest. Here we investigate the disk structure of DoAr 24E using the column densities, temperature, and velocity profiles of two CO absorption features seen toward DoAr 24Eb. We model the spectral energy distributions found using T-ReCS imaging and investigate the likely sources of extinction toward DoAr 24Eb. We find the lack of silicate absorption and small CO column density toward DoAr 24Eb suggest that the mid-infrared continuum is not as extinguished as the near-infrared, possibly due to the mid-infrared originating from an extended region. This, along with the velocity profile of the CO absorption, suggests that the source of high extinction is likely due to a disk or disk wind associated with DoAr 24Eb.

Kruger, Andrew J. [Department of Physical Science, Wilbur Wright College, 4300 North Narragansett Avenue, Chicago, IL 60634 (United States); Richter, Matthew J. [Department of Physics, University of California at Davis, One Shields Avenue, Davis, CA 95616 (United States); Seifahrt, Andreas [Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Carr, John S. [Remote Sensing Division, Naval Research Laboratory, Code 7210, Washington, DC 20375 (United States); Najita, Joan R. [National Optical Astronomy Observatory, Tucson, AZ 85719 (United States); Moerchen, Margaret M. [European Southern Observatory, Alonso de Cordova 3107, Santiago (Chile); Doppmann, Greg W. [W.M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States)

2012-11-20T23:59:59.000Z

375

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho…

2014-03-01T23:59:59.000Z

376

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Václav Štengl, Jilí Henych, Michaela Slušná, Tomáš Matys Grygar, Jana Velická, Martin Kormunda

2014-01-01T23:59:59.000Z

377

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin…

1999-05-01T23:59:59.000Z

378

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

379

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

380

Optical and electrical characterization of an atmospheric pressure microplasma jet for Ar/CH{sub 4} and Ar/C{sub 2}H{sub 2} mixtures  

SciTech Connect (OSTI)

A rf microplasma jet working at atmospheric pressure has been characterized for Ar, He, and Ar/CH{sub 4} and Ar/C{sub 2}H{sub 2} mixtures. The microdischarge has a coaxial configuration, with a gap between the inner and outer electrodes of 250 {mu}m. The main flow runs through the gap of the coaxial structure, while the reactive gases are inserted through a capillary as inner electrode. The discharge is excited using a rf of 13.56 MHz, and rms voltages around 200-250 V and rms currents of 0.4-0.6 A are obtained. Electron densities around 8x10{sup 20} m{sup -3} and gas temperatures lower than 400 K have been measured using optical emission spectroscopy for main flows of 3 slm and inner capillary flows of 160 SCCM. By adjusting the flows, the flow pattern prevents the mixing of the reactive species with the ambient air in the discharge region, so that no traces of air are found even when the microplasma is operated in an open atmosphere. This is shown in Ar/CH{sub 4} and Ar/C{sub 2}H{sub 2} plasmas, where no CO and CN species are present and the optical emission spectroscopy spectra are mainly dominated by CH and C{sub 2} bands. The ratio of these two species follows different trends with the amount of precursor for Ar/CH{sub 4} and Ar/C{sub 2}H{sub 2} mixtures, showing the presence of distinct chemistries in each of them. In Ar/C{sub 2}H{sub 2} plasmas, CH{sub x} species are produced mainly by electron impact dissociation of C{sub 2}H{sub 2} molecules, and the CH{sub x}/C{sub 2}H{sub x} ratio is independent of the precursor amount. In Ar/CH{sub 4} mixtures, C{sub 2}H{sub x} species are formed mainly by recombination of CH{sub x} species through three-body reactions, so that the CH{sub x}/C{sub 2}H{sub x} ratio depends on the amount of CH{sub 4} present in the mixture. All these properties make our microplasma design of great interest for applications such as thin film growth or surface treatment.

Yanguas-Gil, A.; Focke, K.; Benedikt, J.; Keudell, A. von [Arbeitsgruppe Reaktive Plasmen, Fakultaet fuer Physik und Astronomie, Ruhr Universitaet Bochum, Universitaetsstrasse 150, 44780 Bochum (Germany)

2007-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

382

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N�GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

383

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

384

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

385

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

386

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Bläsi, Benedikt

387

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

388

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

389

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

390

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

391

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

392

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang…

2011-10-01T23:59:59.000Z

393

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

394

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

395

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

396

An Application of Augmented Reality (AR) in the Teaching of an Arc Welding Robot  

E-Print Network [OSTI]

Augmented Reality (AR) is an emerging technology that utilizes computer vision methods to overlay virtual objects onto the real world scene so as to make them appear to co-exist with the real objects. Its main objective ...

Chong, J. W. S.

397

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma  

Science Journals Connector (OSTI)

The present work deals with a pulsed microwave discharge in an Ar/CF 4 gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindri...

M. Baeva; X. Luo; J. H. Schäfer; J. Uhlenbusch…

1998-12-01T23:59:59.000Z

398

Radio-frequency Ar plasma treatment on muga silk fiber: correlation between physicochemical and surface morphology  

Science Journals Connector (OSTI)

Radio-frequency (RF) Ar plasma treatment is carried out on natural muga silk fibers in a capacitively coupled plasma reactor. The physical and thermal properties of the muga fibers are investigated at an RF power...

Dolly Gogoi; Joyanti Chutia…

2012-11-01T23:59:59.000Z

399

E-Print Network 3.0 - adaptive response ar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of adaptation could approximate the ARs of P-cells on a single-trial basis in response to a richer stimulus... and color-sensitive pathway) showed response adaptation with...

400

49 A.R.S. 321 et seq.: Water Quality Appeals | Open Energy Information  

Open Energy Info (EERE)

Water Quality Appeals Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: 49 A.R.S. 321 et seq.: Water Quality AppealsLegal Abstract...

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

ARS Title 49-200 Water Quality Control | Open Energy Information  

Open Energy Info (EERE)

Water Quality Control Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: ARS Title 49-200 Water Quality ControlLegal Abstract...

402

E-Print Network 3.0 - ar ti cr Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cu films were deposited on a steel substrate with thickness range of 200 - 2000... of TiC14, N2, HZ and Ar a t 520'C. The adhesion strength of TiN films was investigated by...

403

arXiv:hep-ph/0301023v321Feb2003 SCIPP 02/37  

E-Print Network [OSTI]

arXiv:hep-ph/0301023v321Feb2003 UCD-02-18 SCIPP 02/37 IUHEX-202 December, 2002 hep-ph/0301023 Higgs-energy supersymmetry . . . . . . . . . . . . . . . . 22 5.1 MSSM Higgs sector at tree level

California at Santa Cruz, University of

404

Precise half-life measurements for the superallowed beta(+) emitters Ar-34 and Cl-34  

E-Print Network [OSTI]

the half-life of the superallowed emitter Ar-34 to be 843.8(4)ms...the quoted precision, 0.05%, is a factor of five improvement on the best previous measurement and meets this demanding requirement. Our measurement employed a high-efficiency gas counter, which was sensitive to positrons from both Ar-34 and its daughter Cl-34. We achieved the required precision on Ar-34 by analyzing the parent-daughter composite decay with a new fitting technique. We also obtained an improved half-life for Cl-34 of 1.5268(5) s, which has 0.03% precision and is a factor of two improvement on previous results. As a by-product of these measurements, we determined the half-life of Ar-35 to be 1.7754(11) s....

Iacob, V. E.; Hardy, John C.; Brinkley, J. F.; Gagliardi, Carl A.; Mayes, V. E.; Nica, N.; Sanchez-Vega, M.; Tabacaru, G.; Trache, L.; Tribble, Robert E.

2006-01-01T23:59:59.000Z

405

E-Print Network 3.0 - ar em amostras Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amostras Search Powered by Explorit Topic List Advanced Search Sample search results for: ar em amostras Page: << < 1 2 3 4 5 > >> 1 XVI Congresso Brasileiro de Cincia e Tecnologia...

406

E-Print Network 3.0 - angular correlations 31ar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: angular correlations 31ar Page: << < 1 2 3 4 5 > >> 1 Low Energy Nuclear and Solid State Physics 1a). BetaGamma Angular Correlations in Au 193 and...

407

E-Print Network 3.0 - ar em tomografia Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tomografia Search Powered by Explorit Topic List Advanced Search Sample search results for: ar em tomografia Page: << < 1 2 3 4 5 > >> 1 0.5setgray00.5setgray1 Determinao de...

408

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

409

Rovibrational spectroscopy of ArCO van der Waals complex  

SciTech Connect (OSTI)

The information that can be obtained from the high resolution rovibrational spectra of small molecular clusters is very useful for determining intermolecular potentials and the effects of intermolecular interactions on intramolecular bonds. Recently, such spectra have been obtained via absorption measurements using F-center, frequency difference and diode laser sources. Because F-center and frequency difference lasers operate best in the 2-4 ..mu..m region, studies using these laser sources have involved high frequency vibrational modes (H-X, X-C,F,Cl,Br) or overtones. Although diode lasers cover a much broader spectral range (3-20 ..mu..m), they are less convenient to use for doing survey spectroscopy. We have developed several new techniques which improve the sensitivity and convenience of absorption measurements using diode lasers for the study of molecular clusters in supersonic expansions. Here we describe these techniques and their application for the measurement of the rovibrational spectra of ArCO near 5 ..mu..m. 11 refs., 4 figs., 1 tab.

Campbell, E.J.; De Piante Johnston, A.; Buelow, S.J.

1987-01-01T23:59:59.000Z

410

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. © 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

411

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

412

Data Packages in Hanford Site's Administrative Record (AR) and Public Information Repository (PIR)  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

In 1989, the Department of Energy joined with the Washington State Department of Ecology and the U.S. Environmental Protection Agency in signing the Hanford Federal Facility Agreement and Consent Order more commonly known as the Tri-Party Agreement (TPA). The TPA outlines legally enforceable milestones for Hanford cleanup over the next several decades. The AR is the body of documents and information that is considered or relied upon to arrive at a final decision for remedial action or hazardous waste management. An AR is established for each operable unit (OU); treatment, storage, or disposal unit (TSD); or Expedited Response Action (ERA) group and will contain all documents having information considered in arriving at a Record of Decision or permit. Documents become part of the AR after they have been designated as an AR by the TPA or after EPA, DOE, or other official parties have identified a document or set of documents for inclusion. Furthermore, AR documents are to be kept in a Public Information Repository (PIR).Thousands of data packages that support the AR documents are available to the public in the Hanford PIR.

413

E-Print Network 3.0 - ar gazu hromotografijas Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Science, Seoul National University Collection: Engineering 7 Stabilite des chocs pour la MHD Guy Metivier Summary: 'Evans (cf GaZu, ZuHo et Zu1, Zu2, Zu3). On retrouve alors...

414

Symmetry energy and the isoscaling properties of the fragments in multifragmentation of 40Ca+58Ni, 40Ar+58Ni, and 40Ar+58Fe reactions  

E-Print Network [OSTI]

The symmetry energy and the isoscaling properties of the fragments produced in multifragmentation of 40Ar, 40Ca + 58Fe, 58Ni reactions at 25, 33, 45 and 53 MeV/nucleon were investigated within the framework of a statistical multifragmentation model...

Iglio, Jennifer Ann

2007-09-17T23:59:59.000Z

415

Constraints on the motions of South American and African Shields during the Proterozoic: I. 40Ar/39Ar and paleomagnetic correlations between Venezuela and Liberia  

Science Journals Connector (OSTI)

...PROTEROZOIC SOUTH AMERICAN AND AFRICAN SHIELDS 1049 TABLE 2. (Continued) T( C) f, Atmos. (%) ." Ar (x lO _ 6 cm 3 STPg) f(39) " A r / * > A r Age (Ma)* Sample Bio ON33 508 0.0000 -0.0000 39 1.28 0.003 0.00 1,358 53 550 -0...

416

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

417

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

418

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

419

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

420

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

422

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

423

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

424

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

425

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

426

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

427

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

428

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

429

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

430

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

431

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

432

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

433

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

434

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

435

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

436

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

437

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

438

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

439

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

440

Reflectance variation of human blood under a magnetic field at the Ar-ion laser line: feasibility for clinical diagnosis  

Science Journals Connector (OSTI)

Measuring the reflectance variation ?R under dc magnetic field at Ar+ 0.5017-?m laser line for both corpuscle and plasma human blood samples and applying statistical...

Sato, Heihachi; Hayashi, Hidenori; Sugiyama, Mitsugu; Tsuchiya, Shuji

1981-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Traces on ion yields and electron spectra of Ar inner-shell hollow states with Free-Electron Lasers  

E-Print Network [OSTI]

We explore the formation by Free-Electron-Laser radiation of Ar hollow states with two or three inner-shell holes. We find that even charged Ar ion states can be more populated than odd charged Ar ion states. This depends on the pulse intensity and the number of energetically accessible inner- shell holes. Fully accounting for fine structure, we demonstrate that one electron spectra bare the imprints of Ar hollow states with two inner-shell holes. Moreover, we show how the Auger spectra of these hollow states can be extracted from two-electron coincidence spectra.

Wallis, A O G; Emmanouilidou, A

2015-01-01T23:59:59.000Z

442

Simulation of an Ar/NH{sub 3} low pressure magnetized direct current discharge  

SciTech Connect (OSTI)

A two-dimensional fluid model has been used to investigate the properties of plasma in an Ar/NH{sub 3} low pressure magnetized direct current discharge. We compared the simulation results with the theoretical and experimental results of the other gas discharge in which the magnetic field is considered. Results that obtained using this method are in good agreement with literature. The simulation results show that the positive ammonia ion density follows the positive argon ion density. The Ar{sub 2}{sup +} density is slightly higher than the Ar{sup +} density at 100 mTorr. The largest ammonia ion is NH{sub 3}{sup +} ion, followed by NH{sub 2}{sup +}, NH{sub 4}{sup +}, and NH{sup +} ions. The contribution of NH{sup +} ions to the density of the positive ammonia ions is marginal. The influence of pressure on the plasma discharge has been studied by simulation, and the mechanisms have been discussed. The average plasma density increases as pressure increased. The plasma density appears to be more inhomogeneous than that at the lower pressure. The ratio of charge particles changed as pressure increased. The Ar{sup +} density is slightly higher than the Ar{sub 2}{sup +} density as the pressure increased. It makes NH{sub 4}{sup +} ratio increase as pressure increased. It shows that the electron temperature drops with rising pressure by numerical calculation.

Li Zhi [School of Science, University of Science and Technology Liaoning, Anshan 114051 (China); School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao Zhen [School of Chemistry and Life Science, Anshan Normal University, Anshan 114007 (China); School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Li Xuehui [Physiccal Science and Technical College, Dalian University, Dalian 116622 (China)

2013-01-15T23:59:59.000Z

443

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

444

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

445

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

446

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

447

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

448

Analysis of nonselective plasma etching of AlGaN by CF4/Ar/Cl2 V. Kuryatkov, B. Borisov, J. Saxena, S. A. Nikishin,a  

E-Print Network [OSTI]

of such iterative algorithms is limited by the inherent ill-posedness of the training problem (cf. [4]). It has been with respect to Sobolev norms or the supremum norm is ill-posed (cf. [4] for a detailed discussion

Holtz, Mark

449

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

450

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

451

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

452

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

453

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

454

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Göbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

455

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

456

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

457

K-Ar Dates Of Hydrothermal Clays From Core Hole Vc-2B, Valles Caldera, New  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » K-Ar Dates Of Hydrothermal Clays From Core Hole Vc-2B, Valles Caldera, New Mexico And Their Relation To Alteration In A Large Hydrothermal System Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: K-Ar Dates Of Hydrothermal Clays From Core Hole Vc-2B, Valles Caldera, New Mexico And Their Relation To Alteration In A Large Hydrothermal System Details Activities (2) Areas (1) Regions (0) Abstract: Seventeen K/Ar dates were obtained on illitic clays within Valles caldera (1.13 Ma) to investigate the impact of hydrothermal alteration on Quaternary to Precambrian intracaldera and pre-caldera rocks in a large,

458

Multiple ionization of Ar, Kr, and Xe in a superstrong laser field  

Science Journals Connector (OSTI)

We report the numerical calculation of Ar9+? Ar13+, Kr13+? Kr17+, and Xe19+? Xe23+ ion yield in the laser field with intensity exceeding 1019 W/cm2. The results of the calculations agree with the experimental data [K. Yamakava et al., Phys. Rev. A 68, 065403 (2003)] quantitatively (for the Ar ions) or qualitatively (for the Kr ions). The theoretical results disagree with the experimental data for the Xe ions. We discuss the possible influence of the relativistic effects on this disagreement between theory and experiment. We obtained the approximation formula for the position of the maximum ionic population with the given ionization multiplicity Z depending on the radiation intensity. This position is described by the power function of Z; the exponent is determined by the dependence of sequential ionization potentials on Z value. We discuss the dependence of the approximation formula parameters on the value of the FWHM of the laser pulse.

Aleksei S. Kornev; Elena B. Tulenko; Boris A. Zon

2011-11-21T23:59:59.000Z

459

Ionization, charge exchange, and excitation in F + Ar and F + Kr collisions  

Science Journals Connector (OSTI)

We have measured projectile and target x-ray cross sections for F + Ar and F + Kr collisions using fluorine beams of charge states 7 +, 8 +, and 9+ with energies from 20 to 76 MeV. Pronounced enhancements for the Ar K and Kr L vacancy cross sections using F9+ ions compared to those for the 7+ projectile can be explained by charge exchange as described by an empirically scaled Brinkman-Kramers theory. The Ar L, Kr K and Kr M cross sections are found to exhibit features expected for Coulomb ionization. The projectile K x-ray production for the 9+ ion is accounted for by charge exchange processes. Predictions of the first Born approximation for direct single-step excitation to bound states by the target nucleus overestimate the observed cross sections for F7+ and F8+.

Forrest Hopkins; Rudiger Brenn; Anthony R. Whittemore; Nelson Cue; Vince Dutkiewicz; R. P. Chaturvedi

1976-01-01T23:59:59.000Z

460

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

462

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

463

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

464

HIGH-RESOLUTION FOURIER TRANSFORM SPECTROSCOPY OF LANTHANUM IN Ar DISCHARGE IN THE NEAR-INFRARED  

SciTech Connect (OSTI)

A high-resolution spectrum of lanthanum has been recorded by a Fourier Transform spectrometer in the wavelength range from 833 nm to 1666 nm (6000 cm{sup –1} to 12,000 cm{sup –1}) using as light source a hollow cathode lamp operated with argon as the discharge carrier gas. In total, 2386 spectral lines were detected in this region, of which 555 lines could be classified as La I transitions and 10 lines as La II transitions. All La II transitions and 534 of these La I transitions were classified for the first time, and 6 of the La II transitions and 433 of the classified La I transitions appear to be new lines, which could not be found in the literature. The corresponding energy level data of classified lines are given. Additionally, 430 lines are assigned as Ar I lines and 394 as Ar II lines, of which 179 and 77, respectively, were classified for the first time. All 77 classified Ar II transitions as well as 159 of the classified Ar I transitions are new lines. Furthermore, the wavenumbers of 997 unclassified spectral lines were determined, 235 of which could be assigned as La lines, because of their hyperfine pattern. The remaining 762 lines may be either unclassified Ar lines or unresolved and unclassified La lines with only one symmetrical peak with an FWHM in the same order of magnitude as the Ar lines. The accuracy of the wavenumber for the classified lines with signal-to-noise-ratio higher than four is better than 0.006 cm{sup –1} which corresponds to an accuracy of 0.0004 nm at 830 nm and 0.0017 nm at 1660 nm, respectively.

Güzelçimen, F.; Ba?ar, Gö. [Faculty of Science, Physics Department, Istanbul University, Tr-34134 Vezneciler, Istanbul (Turkey); Tamanis, M.; Kruzins, A.; Ferber, R. [Laser Centre, The University of Latvia, Rainis Boulevard 19, LV-1586 Riga (Latvia); Windholz, L. [Institut für Experimentalphysik, Technische Universität Graz, A-8010 Graz, Petersgasse 16 (Austria); Kröger, S., E-mail: gbasar@istanbul.edu.tr, E-mail: sophie.kroeger@htw-berlin.de [Hochschule für Technik und Wirtschaft Berlin, Wilhelminenhofstr. 75A, D-12459 Berlin (Germany)

2013-10-01T23:59:59.000Z

465

Linking Education R&D Institutes and IndustryLinking Education, R&D Institutes and Industry l ifi E b l AR)(examples are more specific to Egypt , but many apply to AR)  

E-Print Network [OSTI]

and Industry l ifi E b l AR)(examples are more specific to Egypt , but many apply to AR) Mohamed A. Abdou goals. The overall assessment indicates that: Egypt's current S&T system has failed to substantially impactEgypt s current S&T system has failed to substantially impact socio-economic development which

Abdou, Mohamed

466

Search for flow in the reaction Ar + Pb. [0. 8 GeV/u  

SciTech Connect (OSTI)

Interactions between Ar projectiles and lead are studied in terms of global observables. The Streamer Chamber at the Berkeley BEVALAC was used to record all charged particles produced in collisions between 0.8 GeV/u Ar projectiles with a Pb/sub 3/O/sub 4/ target. A hardware trigger selected central collisions with Pb nuclei corresponding to a trigger cross section of 1 barn. In a geometrical picture this is equivalent to an impact parameter range of 0 to 5 fm.

Renfordt, R.E.; Brockmann, R.; Harris, J.W.; Maier, M.; Riess, F.; Sandoval, A.; Stock, R.; Stroebele, H.; Wolf, K.L.; Pugh, H.G.

1983-08-01T23:59:59.000Z

467

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

468

GA103 a microprogrammable processor for online filtering  

E-Print Network [OSTI]

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

469

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

470

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

471

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

472

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

473

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

474

Fenofibrate down-regulates the expressions of androgen receptor (AR) and AR target genes and induces oxidative stress in the prostate cancer cell line LNCaP  

SciTech Connect (OSTI)

Highlights: ? Fenofibrate induces cell cycle arrest in G1 phase and apoptosis in LNCaP cells. ? Fenofibrate reduces the expressions of androgen receptor in LNCaP cells. ? Fenofibrate induces oxidative stress in the prostate cancer cell line LNCaP. -- Abstract: Fenofibrate, a peroxisome proliferator-androgen receptor-alpha agonist, is widely used in treating different forms of hyperlipidemia and hypercholesterolemia. Recent reports have indicated that fenofibrate exerts anti-proliferative and pro-apoptotic properties. This study aims to investigate the effects of fenofibrate on the prostate cancer (PCa) cell line LNCaP. The effects of fenofibrate on LNCaP cells were evaluated by flow cytometry, reverse transcription-polymerase chain reaction, enzyme-linked immunosorbent assays, Western blot analysis, and dual-luciferase reporter assay. Fenofibrate induces cell cycle arrest in G1 phase and apoptosis in LNCaP cells, reduces the expressions of androgen receptor (AR) and AR target genes (prostate-specific antigen and TMPRSS2), and inhibits Akt phosphorylation. Fenofibrate can induce the accumulation of intracellular reactive oxygen species and malondialdehyde, and decrease the activities of total anti-oxidant and superoxide dismutase in LNCaP cells. Fenofibrate exerts an anti-proliferative property by inhibiting the expression of AR and induces apoptosis by causing oxidative stress. Therefore, our data suggest fenofibrate may have beneficial effects in fenofibrate users by preventing prostate cancer growth through inhibition of androgen activation and expression.

Zhao, Hu; Zhu, Chen; Qin, Chao [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)] [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China); Tao, Tao [Department of Neurosurgery, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)] [Department of Neurosurgery, First Affiliated Hospital of Nanjing Medical University, Nanjing (China); Li, Jie; Cheng, Gong; Li, Pu; Cao, Qiang; Meng, Xiaoxin; Ju, Xiaobing; Shao, Pengfei; Hua, Lixin [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)] [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China); Gu, Min, E-mail: medzhao1980@163.com [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)] [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China); Yin, Changjun, E-mail: drcjyin@gmail.com [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)] [State Key Laboratory of Reproductive Medicine, Department of Urology, First Affiliated Hospital of Nanjing Medical University, Nanjing (China)

2013-03-08T23:59:59.000Z

475

Parameter estimation of autoregressive signals in presence of colored AR(1) noise as a quadratic eigenvalue problem  

Science Journals Connector (OSTI)

In this paper, we consider the problem of parameter estimation of autoregressive (AR) signals from observations corrupted with colored AR(1) noise. The proposed method is based on Yule-Walker equations. We express these equations as a quadratic eigenvalue ... Keywords: Colored noise, Eigenvalue problem, Noisy autoregressive model, Yule-Walker equations

Alimorad Mahmoudi; Mahmood Karimi; Hamidreza Amindavar

2012-04-01T23:59:59.000Z

476

A model-based technique for real-time estimation of absolute fluorine concentration in a CF4/Ar plasma  

E-Print Network [OSTI]

A model-based technique for real-time estimation of absolute fluorine concentration in a CF4/Ar for quantitative interpretation of actinometric data to deduce bulk plasma fluorine concentration in a CF4/Ar, for application of real-time feedback control to plasma etching. Based upon a model of CF4 chemistry reaction

Terry, Fred L.

477

Communication: A benchmark-quality, full-dimensional ab initio potential energy surface for Ar-HOCO  

E-Print Network [OSTI]

Communication: A benchmark-quality, full-dimensional ab initio potential energy surface for Ar, 151101 (2014) Communication: A benchmark-quality, full-dimensional ab initio potential energy surface ab initio potential energy surface (PES) for the Ar-HOCO system is pre- sented. The PES consists

Houston, Paul L.

478

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

479

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network [OSTI]

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

480

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "wa ga ar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Measurements of forbidden line radiation of Ar II (6. 99. mu. m) in W3 IRS 1  

SciTech Connect (OSTI)

Observations of the (Ar II) (6.99 ..mu..m) line flux in W3 IRS 1 are combined with previously obtained measurements of the (Ar III) (8.99 ..mu..m) line flux. The observed ratio of (Ar II)/(Ar III) is inconsistent with the calculated ratio for an H II region with the densities required by radio observations and with a central 40,000--45,000 K star with atmosphere as described by a Mihalas model. A solar effective UV radiation field is required; a dusty model we had previously invoked fits the observations. In addition we determine that the argon abundance is n(Ar)/n(H)roughly-equal8 x 10/sup -6/, a value about twice that usually adopted for normal solar abundance; however, there are uncertainties in the extinction and the model which do not allow us to preclude solar abundance.

Herter, T.; Pipher, J.L.; Helfer, H.L.; Willner, S.P.; Puetter, R.C.; Rudy, R.J.; Soifer, B.T.

1981-03-01T23:59:59.000Z

482

arXiv:astro-ph/0106481v126Jun2001 MASSIVE DATASETS IN ASTRONOMY  

E-Print Network [OSTI]

arXiv:astro-ph/0106481v126Jun2001 Chapter 1 MASSIVE DATASETS IN ASTRONOMY Robert J. Brunner, S 21218 USA szalay@pha.jhu.edu Abstract Astronomy has a long history of acquiring, systematizing archives and services representing a new in- formation infrastructure for astronomy of the 21st century

Prince, Thomas A.

483

Elastic scattering of intermediate-energy electrons by Ar and Kr  

Science Journals Connector (OSTI)

Using the relative-flow technique elastic differential cross sections ?? (Ar or Kr ) for Ar and Kr relative to ?? (He) have been measured at impact energies of 3, 5, 7.5, 10, 15, 20, 30, 50, 75, and 100 eV. The angular range covered is from 20° to 135°. These ratios have been multiplied by the recently measured values of ??(He) to obtain ??(Ar or Kr ). The differential cross section curves for both Ar and Kr show deep minima. The positions of these minima have been obtained with an accuracy of ±2°. The cross sections in the angular regions lying between 0° and 20° and 135° and 180° could not be measured owing to instrumental limitations. In these regions estimates of the shapes of differential cross section (DCS) curves have been made by fitting the data obtained from 20° to 135° with a phase-shift analysis, while the normalization to the absolute scale was obtained by normalizing these fits to the relative flow measurements. From these estimates and the measured values of the differential cross section, integral and momentum-transfer cross sections have been obtained. The error limits for the differential, integral, and momentum-transfer cross sections have been estimated as 20, 30, and 30%, respectively.

S. K. Srivastava; H. Tanaka; A. Chutjian; S. Trajmar

1981-05-01T23:59:59.000Z

484

Elastic Constants of Solid Ar, Kr, and Xe: A Monte Carlo Study  

Science Journals Connector (OSTI)

The elastic constants of classical systems of 108 particles arranged (with periodic boundary conditions) on an fcc lattice and interacting with pairwise-additive forces have been evaluated to an accuracy of about 2% by a Monte Carlo procedure closely related to that used by Hoover and his co-workers. For Ar(80 °K) and Kr(85 and 115 °K) we have used the Bobetic-Barker pair potentials and also included the corrections for the truncated tail of the pair potential, quantum effects, and three-body forces. For Ar(80 °K) and Xe(156 °K) we have carried out a similar calculation for the familiar Lennard-Jones 6:12 potential. Our 6:12 Ar(80 °K) elastic constants agree well with the previous work of Hoover et al. but unfortunately differ only little from the more realistic Bobetic-Barker Ar(80 °K) values. Bulk moduli for both potentials are compatible with the currently available experimental data. Comparison of our Kr results with experimental data indicates a need for refinement of the Bobetic-Barker Kr potential. The Xe(156 °K) results agree very well with the recent Brillouin-scattering work of Gornall and Stoicheff which is to some extent disappointing because the same 6:12 potential is in poor agreement with the low-temperature heat capacity.

M. L. Klein and R. D. Murphy

1972-09-15T23:59:59.000Z

485

Temperature independent physisorption kinetics and adsorbate layer compression for Ar adsorbed on Pt(111)  

E-Print Network [OSTI]

Temperature independent physisorption kinetics and adsorbate layer compression for Ar adsorbed the observed kinetics in terms of a competition between adsorbate- substrate and adsorbate-adsorbate not involve the transfer of electrons between the adsorbate and the substrate, (i.e. no chemical bonds

Persson, Mats

486

arXiv:physics/0603142v117Mar2006 Brownian Motion after Einstein  

E-Print Network [OSTI]

arXiv:physics/0603142v117Mar2006 Brownian Motion after Einstein: Some new applications and new-4000 Roskilde, Denmark 2 Department of Biological Physics, E¨otv¨os Lor´and University (ELTE), H-1117 Budapest, Hungary 3 Max Planck Institute for the Physics of Complex Systems, N¨othnitzer Strasse 38, D

487

ccsd00001731, Study on high pressure plasma produced by ArF  

E-Print Network [OSTI]

, Toyota, 4700392, JAPAN * E-mail:n-tsuda@aitech.ac.jp Abstract. When an ArF excimer laser beam was focused and the radiation supported shock wave, which agreed with the experimental one. The backward development mechanism half-width of 15 ns is focused. The output power of laser radiation is controlled by an optical #12

488

arXiv:cond-mat/0506493v120Jun2005 Statistics of cycles in large networks  

E-Print Network [OSTI]

arXiv:cond-mat/0506493v120Jun2005 Statistics of cycles in large networks Konstantin Klemm and Peter corresponds to energy such that the length histogram is obtained as the density of states from Metropolis approximations, and comparisons with real-world networks have been difficult so far, since an efficient method

Stadler, Peter F.

489

arXiv:condmat/0506493 Statistics of cycles in large networks  

E-Print Network [OSTI]

arXiv:cond­mat/0506493 v1 20 Jun 2005 Statistics of cycles in large networks Konstantin Klemm corresponds to energy such that the length histogram is obtained as the density of states from Metropolis checks of the analytical approximations, and comparisons with real-world networks have been di�cult so

Stadler, Peter F.

490

Prediction of Chinese coal ash fusion temperatures in Ar and H{sub 2} atmospheres  

SciTech Connect (OSTI)

The ash fusion temperatures (AFTs) of 21 typical Chinese coal ash samples and 60 synthetic ash samples were measured in Ar and H{sub 2} atmospheres. The computer software package FactSage was used to calculate the temperatures corresponding to different proportions of the liquid phase and predict the phase equilibria of synthetic ash samples. Empirical liquidus models were derived to correlate the AFTs under both Ar and H{sub 2} atmospheres of 60 synthetic ash samples, with their liquidus temperatures calculated by FactSage. These models were used to predict the AFTs of 21 Chinese coal ash samples in Ar and H{sub 2} atmospheres, and then the AFT differences between the atmospheres were analyzed. The results show that, for both atmospheres, there was an apparently linear correlation and good agreement between the AFTs of synthetic ash samples and the liquidus temperatures calculated by FactSage (R > 0.89, and {sigma} < 30{sup o}C). These models predict the AFTs of coal ash samples with a high level of accuracy (SE < 30{sup o}C). Because the iron oxides in coal ash samples fused under a H{sub 2} atmosphere are reduced to metallic iron and lead to changes of mineral species and micromorphology, the AFTs in a H{sub 2} atmosphere are always higher than those with an Ar atmosphere. 34 refs., 9 figs., 7 tabs.

Wen J. Song; Li H. Tang; Xue D. Zhu; Yong Q. Wu; Zi B. Zhu; Shuntarou Koyama [East China University of Science and Technology, Shanghai (China)

2009-04-15T23:59:59.000Z

491

arXiv:math.QA/0212313v122Dec2002 MACDONALD POLYNOMIALS AND ALGEBRAIC  

E-Print Network [OSTI]

arXiv:math.QA/0212313v122Dec2002 MACDONALD POLYNOMIALS AND ALGEBRAIC INTEGRABILITY OLEG CHALYKH1 Abstract. We construct explicitly (non-polynomial) eigenfunctions of the difference operators by Macdonald in case t = qk, k Z. This leads to a new, more elementary proof of several Macdonald conjectures, first

Haase, Markus

492

Zero electron kinetic energy spectroscopy of the ArCl anion Thomas Lenzer,a)  

E-Print Network [OSTI]

and the neutral complexes are observed in the ZEKE spectra. From our spectroscopic data we construct modelZero electron kinetic energy spectroscopy of the ArCl anion Thomas Lenzer,a) Ivan Yourshaw, Berkeley, California 94720 Received 19 January 1999; accepted 23 February 1999 Zero electron kinetic energy

Neumark, Daniel M.

493

arXiv:hep-ph/0602242v67Sep2006 SCIPP-06/01  

E-Print Network [OSTI]

arXiv:hep-ph/0602242v67Sep2006 SCIPP-06/01 hep-ph/0602242 February, 2006 Basis-independent methods care [14, 15] to avoid neutral Higgs-mediated flavor-changing neutral currents (FCNCs) at tree level to completely remove the tree-level FCNC effects. Both the discrete symmetries alluded to above

California at Santa Cruz, University of

494

arXiv:hep-ph/9806331v110Jun1998 SCIPP 98/10  

E-Print Network [OSTI]

arXiv:hep-ph/9806331v110Jun1998 SCIPP 98/10 March 1998 hep-ph/9806331 Probing the MSSM Higgs Sector at tree-level in terms of two Higgs sector parameters. This structure arises due to constraints imposed parameters introduced above are real. Supersymmetry imposes the fol- lowing constraints on the tree

California at Santa Cruz, University of

495

arXiv:hep-ph/9810536v212Nov1998 SLAC-PUB-7853  

E-Print Network [OSTI]

arXiv:hep-ph/9810536v212Nov1998 SLAC-PUB-7853 SCIPP-98/31 FERMILAB-PUB-98/345-T hep-ph/9810536 number conservation in the tree-level supersymmetric theory, it is sufficient to impose one extra

California at Santa Cruz, University of

496

arXiv:hep-ph/001029625Oct2000 JLAB-THY-00-37  

E-Print Network [OSTI]

arXiv:hep-ph/001029625Oct2000 JLAB-THY-00-37 RUB-TPII-17/00 hep-ph/0010296 DVCS amplitude at tree for transverse polarization contains a divergence already at tree level. However, this divergence has zero

Thomas Jefferson National Accelerator Facility

497

arXiv:hep-ph/0207010v529Jan2003 UCD-2002-10  

E-Print Network [OSTI]

arXiv:hep-ph/0207010v529Jan2003 UCD-2002-10 SCIPP-02/10 hep-ph/0207010 July 2002 The CP also been addressed recently in ref. [12]. 2 #12;masses and mixing angles vs. Lagrangian tree

California at Santa Cruz, University of

498

arXiv:hep-ph/0212010v11Dec2002 SCIPP 02/27  

E-Print Network [OSTI]

arXiv:hep-ph/0212010v11Dec2002 SCIPP 02/27 November, 2002 hep­ph/0212010 Decoupling generate an accidental cancellation between tree-level and one-loop terms, resulting in a SM-like Higgs tree- level and one-loop terms, resulting in a SM-like Higgs boson for moderate mA outside

California at Santa Cruz, University of

499

API Testing Using Contract Abstractions Hernn Czemerinski hczemeri@dc.uba.ar  

E-Print Network [OSTI]

API Testing Using Contract Abstractions Hernán Czemerinski ­ hczemeri@dc.uba.ar Departamento de Unpleasant To Doby Hand Contract-Based Software Contract Based API Hypothesis Test suites with higher1 In order to obtain experimental data for contrasting our hypothesis we choose Java APIs and

Figueira, Santiago

500

Safety Slides Rota/ng Sha3s AR-G2 Coue;e Fixture  

E-Print Network [OSTI]

Safety Slides ­ Rota/ng Sha3s 1 AR-G2 Coue;e Fixture · loose-fi@ng shirts max = 250 to 300 rad/s #12;Safety Slides ­ Rota/ng Sha3s 2 Pinch Points in Rota

Cohen, Robert E.