Sample records for vapor transport deposition

  1. Conjugate heat transfer and particle transport in outside vapor deposition process

    SciTech Connect (OSTI)

    Choi, M.; Song, Y.; Kang, S.H. [Seoul National Univ., Seoul (Korea, Republic of). Dept. of Mechanical Engineering

    1995-07-01T23:59:59.000Z

    A numerical study of conjugate heat transfer and particle transport has been carried out for the outside vapor deposition process. A buoyant jet flow impinging on a two-layered cylinder has been analyzed including heat conduction occurring through the two-layered cylinder, which consists of the original target rod and the deposited porous layers. Temperature and flow fields have been obtained by an iterative method, and thermophoretic particle deposition has been studied. Of particular interest are the effects of the thickness of deposited layers, the torch speed, the rotation speed of the cylinder, and the distance between the torch and the cylinder on the heat transfer and particle deposition. Effects of variable properties and tube rotation are also included.

  2. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit [Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Faculty of Engineering, King Mongkut's University of Technology Thonburi, Bangkok 10140 (Thailand); Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F., E-mail: sbent@stanford.edu [Stanford University, Stanford, California 94305 (United States)

    2014-10-27T23:59:59.000Z

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  3. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

    1983-04-19T23:59:59.000Z

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  4. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01T23:59:59.000Z

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  5. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D. (Boulder, CO)

    1985-01-01T23:59:59.000Z

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  6. Vapor Transport in Dry Soils

    SciTech Connect (OSTI)

    Gee, Glendon W.; Ward, Anderson L.

    2001-11-16T23:59:59.000Z

    Water-vapor movement in soils is a complex process, controlled by both diffusion and advection and influenced by pressure and thermal gradients acting across tortuous flow paths. Wide-ranging interest in water-vapor transport includes both theoretical and practical aspects. Just how pressure and thermal gradients enhance water-vapor flow is still not completely understood and subject to ongoing research. Practical aspects include dryland farming (surface mulching), water harvesting (aerial wells), fertilizer placement, and migration of contaminants at waste-sites. The following article describes the processes and practical applications of water-vapor transport, with emphasis on unsaturated (dry) soil systems.

  7. Chemical vapor deposition of functionalized isobenzofuran polymers

    E-Print Network [OSTI]

    Olsson, Ylva Kristina

    2007-01-01T23:59:59.000Z

    This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

  8. Chemical vapor deposition of antimicrobial polymer coatings

    E-Print Network [OSTI]

    Martin, Tyler Philip, 1977-

    2007-01-01T23:59:59.000Z

    There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers ...

  9. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect (OSTI)

    Jervis, T.R.

    1985-01-01T23:59:59.000Z

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  10. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01T23:59:59.000Z

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  11. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel (Florham Park, NJ)

    1984-01-01T23:59:59.000Z

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  12. Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach

    E-Print Network [OSTI]

    Wadley, Haydn

    Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition vapor deposition approach has been explored for the synthesis of lithium phosphorous oxynitride Lipon the ionic transport properties of these films. This enabled the synthesis of electrolyte films with lithium

  13. Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated

    E-Print Network [OSTI]

    Allen, Leslie H.

    Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W through the 106-nm-thick TiN film. W piles up at the TiN/Ti interface, while F rapidly saturates the TiN-sectional and scanning transmission electron microscopy analyses demonstrate that WF6 penetrates into the TiN layer

  14. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C. (Wilmington, DE); Rocheleau, Richard E. (Wilmington, DE)

    1987-03-31T23:59:59.000Z

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  15. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21T23:59:59.000Z

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  16. All graphene electromechanical switch fabricated by chemical vapor deposition

    E-Print Network [OSTI]

    Milaninia, Kaveh M.

    We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

  17. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01T23:59:59.000Z

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  18. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  19. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01T23:59:59.000Z

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  20. Vapor-phase heat-transport system

    SciTech Connect (OSTI)

    Hedstrom, J.C.

    1983-01-01T23:59:59.000Z

    A vapor-phase heat-transport system is being tested in one of the passive test cells at Los Alamos. The system consists of one selective-surface collector and a condenser inside a water storage tank. The refrigerant, R-11, can be returned to the collector by gravity or with a pump. Results from several operating configurations are presented, together with a comparison with other passive systems. A new self-pumping concept is presented.

  1. Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics

    E-Print Network [OSTI]

    Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

    2001-01-01T23:59:59.000Z

    Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

  2. Vapor-deposited porous films for energy conversion

    DOE Patents [OSTI]

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05T23:59:59.000Z

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  3. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

    1989-01-01T23:59:59.000Z

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  4. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Riley, B.; Szreders, B.E.

    1988-04-26T23:59:59.000Z

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  5. DIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages

    E-Print Network [OSTI]

    Dandy, David

    a reality. Epi- taxial diamond has been grown on diamond and cubic-BN. Polycrystalline diamond films haveDIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages by Huimin Liu David S. Dandy of high-quality diamond coatings on preshaped parts and synthesis of free-standing shapes of diamond

  6. Chemical vapor deposition of aluminum oxide

    DOE Patents [OSTI]

    Gordon, Roy (Cambridge, MA); Kramer, Keith (Cleveland, OH); Liu, Xinye (Cambridge, MA)

    2000-01-01T23:59:59.000Z

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  7. Amine functionalization by initiated chemical vapor deposition (iCVD) for interfacial adhesion and film cohesion

    E-Print Network [OSTI]

    Xu, Jingjing, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    Amine functional polymer thin films provide a versatile platform for subsequent functionalization because of their diverse reactivity. Initiated chemical vapor deposition (iCVD) is a polymer chemical vapor deposition ...

  8. Molecular-jet chemical vapor deposition of SiC

    SciTech Connect (OSTI)

    Lubben, D.; Jellison, G.E.; Modine, F.A.

    1995-09-01T23:59:59.000Z

    SiC films have been deposited by molecular-jet chemical vapor deposition (MJCVD) on Si(001) substrates. Methylsilane (MS) diluted in He was used as a precursor for deposition under conditions which produced a MS molecular beam with 0.365 eV translational energy. Films grown at temperatures between 1000 and 1150 C and above {approx}1200 C were single crystal as judged by electron channeling, while those grown at intermediate temperatures were polycrystalline. Films grown at lower temperatures generally had a smoother surface morphology for moderate thicknesses, although all films showed at least some degree of faceting. The best thick films, up to 4 {mu}m, were obtained for substrate temperatures of {approx}1210 C under flow conditions which produced a deposition rate of {approx}1200 {angstrom} per minute.

  9. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    E-Print Network [OSTI]

    Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

  10. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  11. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    SciTech Connect (OSTI)

    McCloy, John S.; Tustison, Randal W.

    2013-04-22T23:59:59.000Z

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  12. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-01-13T23:59:59.000Z

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  13. Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

    E-Print Network [OSTI]

    Rubloff, Gary W.

    to a production-scale tungsten chemical vapor deposition cluster tool for in situ process sensing. Process gasesReal-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic to achieve run-to-run process control of the deposited tungsten film thickness. © 2001 American Vacuum

  14. Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics

    E-Print Network [OSTI]

    Ross, April Denise, 1977-

    2005-01-01T23:59:59.000Z

    Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

  15. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, Kevin C. (4745 Trinity Dr., Los Alamos, NM 87544); Kodas, Toivo T. (5200 Noreen Dr. NE., Albuquerque, NM 87111)

    1994-01-01T23:59:59.000Z

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  16. Oxidative chemical vapor deposition of conductive polymers for use in novel photovoltaic device architectures

    E-Print Network [OSTI]

    Howden, Rachel M. (Rachel Mary)

    2013-01-01T23:59:59.000Z

    The conductive polymer poly(3,4-ethylenedioxythiophene), (PEDOT), deposited via oxidative chemical vapor deposition (oCVD) has been investigated for use in organic electronic devices. The oCVD process as well as the ...

  17. Modeling engine oil vaporization and transport of the oil vapor in the piston ring pack on internal combustion engines

    E-Print Network [OSTI]

    Cho, Yeunwoo, 1973-

    2004-01-01T23:59:59.000Z

    A model was developed to study engine oil vaporization and oil vapor transport in the piston ring pack of internal combustion engines. With the assumption that the multi-grade oil can be modeled as a compound of several ...

  18. Field emission properties of chemical vapor deposited individual graphene

    SciTech Connect (OSTI)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03T23:59:59.000Z

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10?nA current were found to be 515, 610, and 870?V/?m for vacuum gap of 400, 300, and 200?nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  19. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

    2003-12-09T23:59:59.000Z

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  20. Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault Abstract: Polymer fuel cell electrode growth using vapor deposition techniques is reviewed. The supports process: sputtering, CVD, PECVD, MOCVD. In each case, up-to-date fuel cell performances are highlighted

  1. Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with

    E-Print Network [OSTI]

    modifications of reactor configurations and manual control of operating conditions becomes prohibitivelyComputational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large for the chemical vapor deposition (CVD) of silicon in a horizontal rotating disk reactor. A three

  2. OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR

    E-Print Network [OSTI]

    OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor decomposition pressures and increased control over local stoichiometry and defect formation. While we focus here

  3. Low temperature chemical vapor deposition of Co thin films from Co2(CO)8

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Low temperature chemical vapor deposition of Co thin films from Co2(CO)8 D.-X. Yea,*, S. Pimanpanga chemical vapor deposition with a metallorganic Co2(CO)8 precursor. After Ar sputtering of the surface, Co2(CO)8, has been extensively used in cobalt CVD and is attractive, since Co is in its elemental

  4. Molecular Orbital Studies of Titanium Nitride Chemical Vapor Deposition: Gas Phase Complex Formation,

    E-Print Network [OSTI]

    Schlegel, H. Bernhard

    Molecular Orbital Studies of Titanium Nitride Chemical Vapor Deposition: Gas Phase Complex Received June 6, 2000 The chemical vapor deposition (CVD) of titanium nitride can be carried out with TiCl4 Titanium nitride thin films have a variety of proper- ties, such as extreme hardness, high chemical

  5. Molecular Orbital Studies of Titanium Nitride Chemical Vapor Deposition: Imido Dimer Formation and

    E-Print Network [OSTI]

    Schlegel, H. Bernhard

    Molecular Orbital Studies of Titanium Nitride Chemical Vapor Deposition: Imido Dimer Formation- ization of Ti(NR2)2NH in the chemical vapor deposition (CVD) of titanium nitride films. This study uses lead to the formation of higher oligomers. Introduction Titanium nitride thin films have a number

  6. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

  7. Momentum and thermal boundary-layer thickness in a stagnation flow chemical vapor deposition reactor

    E-Print Network [OSTI]

    Dandy, David

    reactor David S. Dandy and Jungheum Yun Department of Chemical Engineering, Colorado State University stagnation flows characteristic of highly convective chemical vapor deposition pedestal reactors. Expressions of diamond via low- pressure chemical vapor deposition, direct current (dc) arcjet reactor systems3­8 have

  8. Properties of chemical vapor infiltration diamond deposited in a diamond powder matrix

    SciTech Connect (OSTI)

    Panitz, J.K.G.; Tallant, D.R.; Hills, C.R.; Staley, D.J.

    1993-12-31T23:59:59.000Z

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors have developed two techniques: electrophoretic deposition and screen printing, to form nonmined diamond powder precursors on substrates. They then densify these precursors in a hot filament assisted reactor. Analysis indicated that a hot filament assisted chemical vapor infiltration process forms intergranular diamond deposits with properties that are to some degree different from predominantly hot-filament-assisted CVD material.

  9. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    SciTech Connect (OSTI)

    Anders, Andre

    2007-02-28T23:59:59.000Z

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  10. Assessment of radionuclide vapor-phase transport in unsaturated tuff

    SciTech Connect (OSTI)

    Smith, D.M.; Updegraff, C.D.; Bonano, E.J.; Randall, J.D.

    1986-11-01T23:59:59.000Z

    This report describes bounding calculations performed to investigate the possibility of radionuclide migration in a vapor phase associated with the emplacement of high-level waste canister in unsaturated tuff formations. Two potential radionuclide transport mechanisms in the vapor phase were examined: aerosol migration and convection/diffusion of volatile species. The former may have significant impact on the release of radionuclides to the accessible environment as the concentration in the aerosols will be equal to that in the ground water. A conservative analysis of air diffusion in a stagnant liquid film indicated that for all expected repository conditions, aerosol formation is not possible. The migration of volatile species was examined both in the vicinity of a waste canister and outside the thermally disturbed zone. Two-dimensional (radial) and three-dimensional (radial-vertical) coupled heat transfer-gas flow-liquid flow simulations were performed using the TOUGH computer code. The gas flow rate relative to the liquid flow rate predicted from the simulations allowed calculations of mobility ratios due to convection which led to the conclusion that, except for the immediate region near the canister, transport in the liquid phase will be dominant for radionuclides heavier than radon. Near the waste canister, iodine transport may also be important in the vapor phase. Bounding calculations for vertical mobility ratios were carried out as a function of saturation. These calculations are conservative and agree well with the two-dimensional simulations. Based on this analysis, it is clear that vapor-phase transport will not be important for radionuclides such as cesium and heavier species. Vapor transport for iodine may play a role in the overall release scenario depending on the particular repository conditions.

  11. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect (OSTI)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15T23:59:59.000Z

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  12. Optical properties of chemical-vapor-deposited diamond films

    SciTech Connect (OSTI)

    Bi, X.X.; Eklund, P.C.; Zhang, J.G.; Rao, A.M. (Department of Physics and Astronomy, University of Kentucky, Lexington, KY (USA)); Perry, T.A.; Beetz, C.P. Jr. (Physics Department, General Motors Research Laboratory, Warren, MI (USA))

    1990-04-01T23:59:59.000Z

    Results of room-temperature optical studies on {similar to}10 micron thick, free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture. The as-grown, free surface of the films exhibited a surface roughness of scale {sigma}{similar to}0.2 to 5 microns, depending on the methane/hydrogen mixture, which introduces significant optical scattering loss for frequencies greater than 0.5 eV. Specular reflection and transmission spectra in the range 0.01--10 eV were collected. Below the threshold for interband adsorption near {similar to}5 eV, the films studied behaved approximately as thin parallel plates of refractive index 2.4, with the rough free surface leading to increasingly larger loss of specular transmission/reflection with decreasing wavelength. Structure in the mid-infrared transmission spectra was observed and attributed to disorder-induced one-phonon absorption, intrinsic multi-phonon absorption, and infrared active --C--H{sub 2} stretching modes. The strength of the C--H band was observed to increase with increasing methane pressure in the growth chamber. At 5.3 eV, the onset of interband absorption was observed, in good agreement with the value of the indirect bandgap in type IIa (intrinsic) diamond.

  13. Low Temperature Chemical Vapor Deposition of Zirconium Nitride in a Fluidized Bed 

    E-Print Network [OSTI]

    Arrieta, Marie

    2012-10-19T23:59:59.000Z

    The objective of this research was to design, assemble, and demonstrate the initial performance of a fluidized bed chemical vapor deposition (FB-CVD) system capable of producing thin, uniform zirconium nitride (ZrN) coatings (1 to 10 micrometers...

  14. Bilayer graphene growth by low pressure chemical vapor deposition on copper foil

    E-Print Network [OSTI]

    Fang, Wenjing, S.M. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

  15. Iron (III) Chloride doping of large-area chemical vapor deposition graphene

    E-Print Network [OSTI]

    Song, Yi, S.M. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride ...

  16. Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel

    E-Print Network [OSTI]

    Reina Ceeco, Alfonso

    2010-01-01T23:59:59.000Z

    An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene ...

  17. Porous GaN nanowires synthesized using thermal chemical vapor deposition

    E-Print Network [OSTI]

    Kim, Bongsoo

    Porous GaN nanowires synthesized using thermal chemical vapor deposition Seung Yong Bae a , Hee Won 2003 Abstract Porous structured GaN nanowires were synthesized with a large scale by chemical vapor to 1 mm. The porous GaN nanowires consist of the wurtzite single crystal grown with the [0 1 1

  18. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOE Patents [OSTI]

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13T23:59:59.000Z

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  19. Fabrication of nanostructure by physical vapor deposition with glancing angle deposition technique and its applications

    SciTech Connect (OSTI)

    Horprathum, M., E-mail: mati.horprathum@nectec.or.th; Eiamchai, P., E-mail: mati.horprathum@nectec.or.th; Patthanasettakul, V.; Limwichean, S.; Nuntawong, N.; Chindaudom, P. [Optical Thin-Film Laboratory National Electronics and Computer Technology Center, Pathumthani, 12120 (Thailand); Kaewkhao, J. [Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000 (Thailand); Chananonnawathorn, C. [Department of Physics, Faculty of Science and Technology, Thammasat University, Pathumthani, 12121 (Thailand)

    2014-09-25T23:59:59.000Z

    A nanostructural thin film is one of the highly exploiting research areas particularly in applications in sensor, photocatalytic, and solar-cell technologies. In the past two decades, the integration of glancing-angle deposition (GLAD) technique to physical vapor deposition (PVD) process has gained significant attention for well-controlled multidimensional nanomorphologies because of fast, simple, cost-effective, and mass-production capability. The performance and functional properties of the coated thin films generally depend upon their nanostructural compositions, i.e., large aspect ratio, controllable porosity, and shape. Such structural platforms make the fabricated thin films very practical for several realistic applications. We therefore present morphological and nanostructural properties of various deposited materials, which included metals, i.e., silver (Ag), and oxide compounds, i.e., tungsten oxide (WO{sub 3}), titanium dioxide (TiO{sub 2}), and indium tin oxide (ITO). Different PVD techniques based on DC magnetron sputtering and electron-beam evaporation, both with the integrated GLAD component, were discussed. We further explore engineered nanostructures which enable controls of optical, electrical, and mechanical properties. These improvements led to several practical applications in surface-enhanced Raman, smart windows, gas sensors, self-cleaning materials and transparent conductive oxides (TCO)

  20. Development of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Development of a spatially controllable chemical vapor deposition reactor with combinatorial these limitations, a novel CVD reactor system has been developed that can explicitly control the spatial profile flexibility, we introduced a new CVD reactor concept that enables control of film deposition characteristics

  1. Low temperature junction growth using hot-wire chemical vapor deposition

    DOE Patents [OSTI]

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04T23:59:59.000Z

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  2. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, James G. (Albuquerque, NM); Roherty-Osmun, Elizabeth Lynn (Albuquerque, NM); Smith, Paul M. (Albuquerque, NM); Custer, Jonathan S. (Albuquerque, NM); Jones, Ronald V. (Albuquerque, NM); Nicolet, Marc-A. (Pasadena, CA); Madar, Roland (Eybens, FR); Bernard, Claude (Brie et Angonnes, FR)

    1999-01-01T23:59:59.000Z

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  3. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29T23:59:59.000Z

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  4. Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor

    E-Print Network [OSTI]

    Rubloff, Gary W.

    deposition reactor Yuhong Cai, Laurent Henn-Lecordier, and Gary W. Rubloffa Department of Materials Science locations in a spatially programmable chemical vapor deposition SP-CVD reactor prototype, where such chemical sensing is essential to achieve the benefits of a new paradigm for reactor design. The spatially

  5. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, A.W.

    1988-03-18T23:59:59.000Z

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  6. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, Arthur W. (Sandia Park, NM)

    1990-01-01T23:59:59.000Z

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  7. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, Jr., Walter J. (Oak Ridge, TN); Caputo, Anthony J. (Knoxville, TN)

    1986-01-01T23:59:59.000Z

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  8. Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, W.J. Jr.; Caputo, A.J.

    1984-09-07T23:59:59.000Z

    A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  9. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect (OSTI)

    Robbins, Joshua; Seman, Michael

    2005-09-20T23:59:59.000Z

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of 69% and a darkened state transmission 11%. These un-optimized devices compared well with commercially available products, which have a stated clear transmission of 59% and dark transmission of 4%. The PECVD oxides have displayed advantages over films produced by sputtering. The first advantage is that deposition rates were significantly higher than typical sputtering rates. Rates of 100 nm/min were achieved for WO3, and rates of 50 nm/min produced quality V2O5 and Ta2O5 films. Faster rates will produce a significant reduction in cost due to higher throughput. Another advantage was that films were less dense than those produced by sputtering as reported in the literature. This leads to high diffusion coefficients and fast switching times. Also less dense films have been shown to produce larger contrast ratios in WO3 and larger storage capacity in V2O5. From the data collected in this category 1 project we have shown that PECVD is feasible and beneficial for the deposition of working layers for electrochromic devices. These results and the lessons learned can be applied toward deposition on polymers and equipment scale-up in future work.

  10. Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    , high temperature, and high radiation environments. Conventional silicon carbide chemical vapor deposition CVD processes generally utilized multiple precursors such as silane and hydrocarbons, and required temperature alternatives to the conventional SiC CVD methods must be considered. To do this, a relatively

  11. arc vapor deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science Websites Summary: applied to the deposition of thermal barrier coatings onto an airfoil substrate using a gas jet assisted) principles have become...

  12. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-06-01T23:59:59.000Z

    Parallel research studies are underway on the following interrelated and fundamental subjects; Geometrical Approach to Determining the Sticking Probability of Particles Impacting on Convex Solid Surfaces; Correlations for High Schmidt Number Particle Deposition From Dilute Flowing Rational Engineering Suspensions; Average Capture Probability of Arriving Particles Which Are Distributed With ResPect to ImPact VelocitY and Incidence Angle (Relative to Deposit Substrate); Experimental and Theoretical Studies of Vapor Infiltration of Non-isothermal Granular Deposits; Effective Area/Volume of Populations of 'MicroPorous' Aerosol Particles (Compact and 'Fractal' Quasispherical Aggregates); Effects of Radiative Heat Transfer on the Coagulation Rates of Combustion-Generated Particles; Structure-Sensitivity of Total Mass Deposition Rates from Combustion Product Streams containing Coagulation-Aged Populations of Aggregated Primary Particles; and Na[sub 2]SO[sub 4] Chemical Vapor Deposition From Chlorine-containing Coal-Derived Gases.

  13. Continuous ultra-thin MoS{sub 2} films grown by low-temperature physical vapor deposition

    SciTech Connect (OSTI)

    Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); Hu, J. J.; Bultman, J. E.; Jespersen, M. L. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45469 (United States); Wang, B.; Haque, M. A. [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, College Park, Pennsylvania 16802 (United States); Shamberger, P. J.; McConney, M. E.; Naguy, R. D.; Voevodin, A. A. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2014-06-30T23:59:59.000Z

    Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS{sub 2} on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350?°C. Synthesis of few-layer MoS{sub 2} in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

  14. Solar Energy Materials & Solar Cells 91 (2007) 924930 Plasma-enhanced chemical vapor deposition of zinc oxide at

    E-Print Network [OSTI]

    Hicks, Robert F.

    2007-01-01T23:59:59.000Z

    Solar Energy Materials & Solar Cells 91 (2007) 924­930 Plasma-enhanced chemical vapor deposition (CIGS) or plastic substrates [1,2,8]. In this paper, we report on the deposition of aluminum- doped zinc

  15. Ceramic-metallic coatings by electron beam physical vapor deposition (EB-PVD) process

    SciTech Connect (OSTI)

    Wolfe, D.E.; Singh, J. [Pennsylvania State Univ., State College, PA (United States)

    1995-12-31T23:59:59.000Z

    Electron Beam Physical Vapor Deposition (EB-PVD) process is considered to be a technology that has overcome some of the difficulties or problems associated with the chemical vapor deposition (CVD), physical vapor deposition (PVD) and metal spray processes. The EB-PVD process offers many desirable characteristics such as relatively high deposition rates (up to 100-150 {mu}m/minute with an evaporation rate {approx}10-15 Kg/hour,) dense coatings, precise compositional control, columnar and poly-crystalline microstructure, low contamination, and high thermal efficiency. Various metallic and ceramic coatings (oxides, carbides, nitrides) can be deposited at relatively low temperatures. Even elements with low vapor pressure such as molybdenum, tungsten, and carbon are readily evaporated by this process. In addition, EB-PVD is capable of producing multi-layered laminated metallic/ceramic coatings on large components by changing the EB-PVD processing conditions such as ingot composition, part manipulation, and electron beam energy. Attachment of an ion assisted beam source to the EB-PVD offers additional benefits such as dense coatings with improved adhesion. In addition, textured coatings can be obtained that are desirable in many applications such as cutting tools. This laboratory has started a new thrust in the coating area by the EB-PVD process. The microstructure of thermal barrier ceramic coatings (i.e., yttria stabilized zirconia) developed by the EB-PVD process will be presented.

  16. atomic vapor deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposition onto micro- and nanopowders14 and coating of nanoparticle films15 as well as aerogel coating of porous materials that exhibit ultrahigh-aspect ratios.12,13 To date,...

  17. SPATIALLY ORGANIZED PARYLENE NANOWIRES FABRICATED BY OBLIQUE ANGLE VAPOR DEPOSITION

    E-Print Network [OSTI]

    Demirel, Melik C.

    surfaces by functionalization through two methods: (i) electroless method of creating a porous Nickel 50-80 nm thin nickel film can be obtained by electroless deposition on the pary

  18. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

    1998-01-01T23:59:59.000Z

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  19. Desalination-of water by vapor-phase transport through hydrophobic nanopores

    E-Print Network [OSTI]

    Lee, Jongho

    We propose a new approach to desalination of water whereby a pressure difference across a vapor-trapping nanopore induces selective transport of water by isothermal evaporation and condensation across the pore. Transport ...

  20. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect (OSTI)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01T23:59:59.000Z

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  1. Study of anisotropy of spin cast and vapor deposited polyimide films using internal reflection techniques

    SciTech Connect (OSTI)

    Liberman, V.

    1996-11-01T23:59:59.000Z

    We have compared anisotropy of spin cast and vapor deposited polyimide (VDP) films, using internal reflection infrared spectroscopy. The films were deposited directly on the internal reflection element. We find that spin cast films are more anisotropic than their VDP counterparts, with the polyimide chains tending to align parallel to the substrate. Both films are found to contain more and less ordered regions. Within the ordered regions, the plane of the phenyl ring tends to align parallel to the substrate.

  2. MATADOR (Methods for the Analysis of Transport And Deposition Of Radionuclides) code description and User's Manual

    SciTech Connect (OSTI)

    Avci, H.I.; Raghuram, S.; Baybutt, P.

    1985-04-01T23:59:59.000Z

    A new computer code called MATADOR (Methods for the Analysis of Transport And Deposition Of Radionuclides) has been developed to replace the CORRAL-2 computer code which was written for the Reactor Safety Study (WASH-1400). This report is a User's Manual for MATADOR. MATADOR is intended for use in system risk studies to analyze radionuclide transport and deposition in reactor containments. The principal output of the code is information on the timing and magnitude of radionuclide releases to the environment as a result of severely degraded core accidents. MATADOR considers the transport of radionuclides through the containment and their removal by natural deposition and by engineered safety systems such as sprays. It is capable of analyzing the behavior of radionuclides existing either as vapors or aerosols in the containment. The code requires input data on the source terms into the containment, the geometry of the containment, and thermal-hydraulic conditions in the containment.

  3. Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filamentsubstrate separation

    E-Print Network [OSTI]

    Bristol, University of

    Polycrystalline diamond films have been grown by hot filament (HF) chemical vapor deposition on WC-Co bar is an established technique for growing hard, wear- resistant polycrystalline diamond films on a range of substratesDiamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament

  4. Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes

    E-Print Network [OSTI]

    Hone, James

    Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes (SWNTs) using a cobalt ultrathin film (1 nm) as the catalyst and ethanol as carbon feedstock flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act

  5. Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

    E-Print Network [OSTI]

    Lee, Jong Duk

    2002; published 5 February 2003 Phosphorus doped polycrystalline diamond films were grown using ion the electrical char- acteristics of diamond FEAs to lower the operating voltage. Polycrystalline diamond hasField emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond

  6. Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

    E-Print Network [OSTI]

    Hone, James

    Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing

  7. Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition

    E-Print Network [OSTI]

    exfoliation of graphite [1], sublimation of epitaxial SiC [4], and catalyst-assisted chemical vapor deposition (CVD) [5­9]. However, mechanical exfoliation of graphite can only supply small-size graphene (see Fig than that of graphene obtained via exfoli- ation of graphite as summarized in Fig. 1. While many

  8. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

    E-Print Network [OSTI]

    of titanium in a nitrogen atmosphere forms TiN with only a slight dependence on substrate temperatureAtmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium, Massachusetts 02138 (Received 15 December 1994; accepted 28 October 1995) Near stoichiometric titanium nitride

  9. Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of

    E-Print Network [OSTI]

    of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

  10. Vapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic devices

    E-Print Network [OSTI]

    Bean, John C.

    , many groups have made headway fab- ricating molecular electronic test devices.1­18 These devices exceptions,22,23 the field of mo- lecular electronics is plagued by problems including a lack of deviceVapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic

  11. Initiated chemical vapor deposition of fluoropolymer coatings for the surface modification of complex geometries

    E-Print Network [OSTI]

    Gupta, Malancha, 1980-

    2007-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a one-step, soventless process that can be used to produce polymeric thin films. The iCVD technique has been used to polymerize a wide variety of vinyl monomers such as glycidyl ...

  12. Molecular orbital studies of titanium nitride chemical vapor deposition: gas phase b-elimination

    E-Print Network [OSTI]

    Schlegel, H. Bernhard

    Molecular orbital studies of titanium nitride chemical vapor deposition: gas phase b) of titanium nitride can be carried out using TiNR24 and NH3 (R Me or Et). Imido compounds are thought. Ó 2001 Pub- lished by Elsevier Science B.V. 1. Introduction It is well known that titanium nitride

  13. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

    E-Print Network [OSTI]

    Boyer, Edmond

    Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

  14. Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol

    E-Print Network [OSTI]

    Maruyama, Shigeo

    1 Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol Pei Zhao, and systematically investigate the growth of graphene from ethanol and compare its self-limiting behavior over copper facets with different identities. Results show that the growth of graphene from ethanol in the LPCVD

  15. A Multiscale Simulator for Low Pressure Chemical Vapor Deposition

    E-Print Network [OSTI]

    Advanced Custom Technologies, Motorola, Inc., Mail Drop M350, 2200 W. Broadway Rd., Mesa, AZ 85202 Timothy that govern the species and energy transport with chemical reactions throughout the reactor chamber, and (2

  16. A Multiscale Simulator for Low Pressure Chemical Vapor Deposition

    E-Print Network [OSTI]

    Advanced Custom Technologies, Motorola, Inc., Mail Drop M350, 2200 W. Broadway Rd., Mesa, AZ 85202 Timothy the equations that govern the species and energy transport with chemical reactions throughout the reactor

  17. Direct chemical vapor deposition of graphene on dielectric surfaces

    DOE Patents [OSTI]

    Zhang, Yuegang; Ismach, Ariel

    2014-04-29T23:59:59.000Z

    A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

  18. Massively parallel computation of 3D flow and reactions in chemical vapor deposition reactors

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A.; Hennigan, G.L.; Devine, K.D.; Moffat, H.K.

    1997-12-01T23:59:59.000Z

    Computer modeling of Chemical Vapor Deposition (CVD) reactors can greatly aid in the understanding, design, and optimization of these complex systems. Modeling is particularly attractive in these systems since the costs of experimentally evaluating many design alternatives can be prohibitively expensive, time consuming, and even dangerous, when working with toxic chemicals like Arsine (AsH{sub 3}): until now, predictive modeling has not been possible for most systems since the behavior is three-dimensional and governed by complex reaction mechanisms. In addition, CVD reactors often exhibit large thermal gradients, large changes in physical properties over regions of the domain, and significant thermal diffusion for gas mixtures with widely varying molecular weights. As a result, significant simplifications in the models have been made which erode the accuracy of the models` predictions. In this paper, the authors will demonstrate how the vast computational resources of massively parallel computers can be exploited to make possible the analysis of models that include coupled fluid flow and detailed chemistry in three-dimensional domains. For the most part, models have either simplified the reaction mechanisms and concentrated on the fluid flow, or have simplified the fluid flow and concentrated on rigorous reactions. An important CVD research thrust has been in detailed modeling of fluid flow and heat transfer in the reactor vessel, treating transport and reaction of chemical species either very simply or as a totally decoupled problem. Using the analogy between heat transfer and mass transfer, and the fact that deposition is often diffusion limited, much can be learned from these calculations; however, the effects of thermal diffusion, the change in physical properties with composition, and the incorporation of surface reaction mechanisms are not included in this model, nor can transitions to three-dimensional flows be detected.

  19. Validating optical emission spectroscopy as a diagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition

    E-Print Network [OSTI]

    Bristol, University of

    chemical vapor deposition of polycrystalline diamond. Several tracer species are monitored in order to gain used for diamond chemical vapor deposition Jie Ma,1 Michael N. R. Ashfold,1,a and Yuri A. Mankelevich2 spectroscopic methods used to diagnose microwave MW plasmas used for diamond chemical vapor deposition CVD . Zhu

  20. Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)

    SciTech Connect (OSTI)

    Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

    1995-12-01T23:59:59.000Z

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

  1. Pore evolution during high pressure atomic vapor deposition D. D. Hass Y. Y. Yang H. N. G. Wadley

    E-Print Network [OSTI]

    Wadley, Haydn

    The development of physical vapor deposition systems that employ inert gas jets to entrain and deposit atomic conditions can contain a higher volume fraction of porosity and a different pore morphology to coatings created by conventional, low pressure (\\10-4 Pa) deposition processes. A recent direct simulation Monte

  2. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, K.C.; Kodas, T.T.

    1994-01-11T23:59:59.000Z

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  3. Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System

    SciTech Connect (OSTI)

    Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.; Park, HyeKyoung; Williams, R. Scott

    2014-02-01T23:59:59.000Z

    Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we present the current progress of the system development.

  4. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15T23:59:59.000Z

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  5. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

    2008-10-07T23:59:59.000Z

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  6. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23T23:59:59.000Z

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  7. Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

    E-Print Network [OSTI]

    Kimerling, Lionel C.

    Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect ...

  8. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

    E-Print Network [OSTI]

    Steckl, Andrew J.

    chemical vapor deposition on GaN/Al2O3 substrates. Trimethylgallium TMGa , ammonia (NH3), and europium 2 europium doping was performed utilizing a europium beta-diketonate, eu- ropium 2,2,4,4-tetramethyl-3

  9. Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper

    SciTech Connect (OSTI)

    Wu, L.; Ko, E.; Dulkin, A.; Park, K. J.; Fields, S.; Leeser, K. [Novellus Systems, Inc., 4000 North 1st St., San Jose, California 95134 (United States); Meng, L.; Ruzic, D. N. [Center for Plasma-Material Interactions, University of Illinois at Urbana-Champaign, 201 South Goodwin, Urbana, Illinois 61801 (United States)

    2010-12-15T23:59:59.000Z

    To meet the stringent requirements of interconnect metallization for sub-32 nm technologies, an unprecedented level of flux and energy control of film forming species has become necessary to further advance ionized physical vapor deposition technology. Such technology development mandates improvements in methods to quantify the metal ion fraction, the gas/metal ion ratio, and the associated ion energies in the total ion flux to the substrate. In this work, a novel method combining planar Langmuir probes, quartz crystal microbalance (QCM), and gridded energy analyzer (GEA) custom instrumentation is developed to estimate the plasma density and temperature as well as to measure the metal ion fraction and ion energy. The measurements were conducted in a Novellus Systems, Inc. Hollow Cathode Magnetron (HCM{sup TM}) physical vapor deposition source used for deposition of Cu seed layer for 65-130 nm technology nodes. The gridded energy analyzer was employed to measure ion flux and ion energy, which was compared to the collocated planar Langmuir probe data. The total ion-to-metal neutral ratio was determined by the QCM combined with GEA. The data collection technique and the corresponding analysis are discussed. The effect of concurrent resputtering during the deposition process on film thickness profile is also discussed.

  10. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    SciTech Connect (OSTI)

    Woehrl, Nicolas, E-mail: nicolas.woehrl@uni-due.de; Schulz, Stephan [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany)] [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany); Ochedowski, Oliver; Gottlieb, Steven [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany)] [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany); Shibasaki, Kosuke [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-04-15T23:59:59.000Z

    A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  11. Computational Fluid Dynamics Study of Aerosol Transport and Deposition Mechanisms

    E-Print Network [OSTI]

    Tang, Yingjie

    2012-07-16T23:59:59.000Z

    In this work, various aerosol particle transport and deposition mechanisms were studied through the computational fluid dynamics (CFD) modeling, including inertial impaction, gravitational effect, lift force, interception, and turbophoresis, within...

  12. Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

    DOE Patents [OSTI]

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-25T23:59:59.000Z

    Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

  13. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    SciTech Connect (OSTI)

    Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

    2014-03-24T23:59:59.000Z

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

  14. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    SciTech Connect (OSTI)

    Alam, M. T.; Haque, M. A., E-mail: mah37@psu.edu [Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Bresnehan, M. S.; Robinson, J. A. [Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA and The Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)] [Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA and The Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-01-06T23:59:59.000Z

    Thermal conductivity of freestanding 10?nm and 20?nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100?±?10?W m{sup ?1} K{sup ?1}, is lower than the bulk basal plane value (390?W m{sup ?1} K{sup ?1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  15. Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

    SciTech Connect (OSTI)

    Xia, Min; Guo, Hongyan; Ge, Changchun [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing (China); Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, 111, 1st Section, Northern 2nd Ring Road, Chengdu (China); Yan, Qingzhi, E-mail: qzyan@ustb.edu.cn; Lang, Shaoting [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing (China)

    2014-05-14T23:59:59.000Z

    A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (?-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, ?-CNTs/amorphous tungsten carbide, ?-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

  16. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03T23:59:59.000Z

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1?x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4??m, with a peak responsivity of up to ?100??A/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140?K.

  17. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    SciTech Connect (OSTI)

    Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

    2013-12-16T23:59:59.000Z

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11}?cm{sup ?2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  18. Electrochromic properties of tungsten trioxide thin films prepared by photochemical vapor deposition

    SciTech Connect (OSTI)

    Maruyama, Toshiro; Kanagawa, Tetsuya (Kyoto Univ. (Japan). Dept. of Chemical Engineering)

    1994-09-01T23:59:59.000Z

    Electrochromic tungsten trioxide thin films were prepared by a photochemical vapor deposition. The source material was tungsten carbonyl. A 6 W low pressure mercury lamp was used as a light source. Amorphous tungsten trioxide thin films were obtained at a substrate temperature of 200 C. The UV radiation enhances the oxidation of tungsten, in addition to the acceleration of the deposition of the films. Reduction and oxidation of the films in a 0.3M LiClO[sub 4] propylene carbonate solution resulted in desirable changes in optimal absorption. The bleaching time was short compared to the amorphous CVD film. Coulometry indicated that the coloration efficiency was 222 cm[sup 2]/C.

  19. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Kagan, Harris; Kass, Richard; Gan, K.K.

    2014-01-23T23:59:59.000Z

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  20. Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl

    SciTech Connect (OSTI)

    Vogt, G.J.

    1982-04-01T23:59:59.000Z

    Chemical vapor deposition (CVD) of tungsten from W(CO)/sub 6/ has been investigated below 670 K as an alternate process to WF/sub 6/ CVD for coating glass microspheres. The major advantages of W(CO)/sub 6/ CVD are the elimination of the HF damage to the glass microspheres and potentially a lower deposition temperature for coating DT-filled microspheres. W(CO)/sub 6/ CVD can be utilized, in principle, to coat the microspheres with 1 to 5 ..mu..m of tungsten or to flash coat the microspheres for further coating by WF/sub 6/ CVD. Test coatings were deposited in a fluidized-bed reactor with a hydrogen carrier gas. The coatings were found to contain nearly equal portions of carbon and oxygen, ranging from 16 to 25 at.% for each element. The high carbon and oxygen concentrations are believed to result principally from the physical entrapment of chemisorbed CO molecules at the surface of the growing deposit. The general quality and adhesion of the W(CO)/sub 6/-derived coatings are unsatisfactory at this time for ICF applications.

  1. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01T23:59:59.000Z

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  2. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOE Patents [OSTI]

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17T23:59:59.000Z

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  3. Energy and water vapor transport across a simplified cloud-clear air interface

    E-Print Network [OSTI]

    Gallana, Luca; De Santi, Francesca; Iovieno, Michele; Tordella, Daniela

    2015-01-01T23:59:59.000Z

    We consider a simplified physics of the could interface where condensation, evaporation and radiation are neglected and momentum, thermal energy and water vapor transport is represented in terms of the Boussinesq model coupled to a passive scalar transport equation for the vapor. The interface is modeled as a layer separating two isotropic turbulent regions with different kinetic energy and vapor concentration. In particular, we focus on the small scale part of the inertial range as well as on the dissipative range of scales which are important to the micro-physics of warm clouds. We have numerically investigated stably stratified interfaces by locally perturbing at an initial instant the standard temperature lapse rate at the cloud interface and then observing the temporal evolution of the system. When the buoyancy term becomes of the same order of the inertial one, we observe a spatial redistribution of the kinetic energy which produce a concomitant pit of kinetic energy within the mixing layer. In this sit...

  4. A study of heat transfer and particle motion relative to the modified chemical vapor deposition process

    SciTech Connect (OSTI)

    Choi, M.; Greif, R. (Univ. of California, Berkeley (United States)); Baum, H.R. (National Inst. of Standards and Technology, Gaithersburg, MD (United States))

    1989-11-01T23:59:59.000Z

    Heat transfer and particle motion relative to the modified chemical vapor deposition process have been studied for general values of the torch speed. Three-dimensional temperature fields have been obtained over the entire cross section of the tube and the effects of tube rotation and localized torch heating in the axial and circumferential directions have been studied. The particle trajectories have been calculated from a formulation that includes the contributions from forced flow, i.e., Poiseuille flow in the axial direction, rigid body rotation about the tube axis, and thermophoretic contributions in the axial, radial, and angular directions. The particle trajectories are helices and are shown to be strongly dependent on the tube rotation.

  5. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum

    SciTech Connect (OSTI)

    Ping, Jinglei; Fuhrer, Michael S., E-mail: michael.fuhrer@monash.edu [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA and School of Physics, Monash University, 3800 Victoria (Australia)

    2014-07-28T23:59:59.000Z

    We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (?8000?cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

  6. Growth of FePt encapsulated carbon nanotubes by thermal chemical vapor deposition

    SciTech Connect (OSTI)

    Fujiwara, Yuji, E-mail: fujiwara@phen.mie-u.ac.jp; Kaneko, Tetsuya; Hori, Kenta; Takase, Sho; Sato, Hideki; Maeda, Kohji; Kobayashi, Tadashi [Graduate School of Engineering, Mie University, Kurima-machiya-cho 1577, Tsu 514-8507 (Japan); Kato, Takeshi; Iwata, Satoshi [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Jimbo, Mutsuko [Department of Electrical and Electronic Engineering, Daido University, Takiharu-cho 10-3, Minami-ku, Nagoya 457-8530 (Japan)

    2014-03-15T23:59:59.000Z

    FePt encapsulated carbon nanotubes (CNTs) were grown by thermal chemical vapor deposition using an Fe/Pt bilayer catalyst. The CNTs were grown according to the base growth model. Selected area electron diffraction results revealed that the encapsulated particles were A1-FePt, L1{sub 0}-FePt, and Fe{sub 3}PtC. The crystal structures of particles found at the root parts of CNTs were not able to be identified, however. The layered structure of catalytic films seemed to be responsible for the difference in Pt content between particles found at tip and root parts of CNTs. Approximately 60% of CNTs grown at 800?°C had particles at their tip parts, compared to only 30% when the growth temperature was 700?°C, indicating that higher process temperatures promote particle encapsulation in CNTs.

  7. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    SciTech Connect (OSTI)

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

    2013-01-14T23:59:59.000Z

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  8. Water vapor transport in the vicinity of imbibing saline plumes: Homogeneous and layered unsaturated porous media

    E-Print Network [OSTI]

    Weisbrod, Noam

    solutions (brines) were applied as point sources to the surface of homogenous packs of prewetted silica sand vapor transport from the residually saturated sand into the imbibing brine was observed in all sand grades and geometries. Pure water applied to sand prewetted with brine migrated into the surrounding

  9. investigating the source, transport, and isotope fractionation of water vapor in the atmospheric boundary layer

    E-Print Network [OSTI]

    Minnesota, University of

    investigating the source, transport, and isotope fractionation of water vapor in the atmospheric-portable mixing ratio generator and Rayleigh distillation device, Agricultural and Forest Meteorology, 150, 1607 ratio generator. Incom- ing dry air passes through a molecular sieve and then a stainless steel frit (a

  10. Vapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass, H.N.G. Wadley

    E-Print Network [OSTI]

    Wadley, Haydn

    Vapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass at high temperature. It requires the chemical vapor deposition of aluminum on a nickel rich superalloy substrate that has been pre-coated with several microns of electrodeposited platinum. Here, we show

  11. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-03-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization tools'' foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing fireside'' surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

  12. The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition

    E-Print Network [OSTI]

    Atwater, Harry

    desorption kinetics. In particular, the Si signal exhibits a high temperature activation energy consistent vapor deposition growth have been measured by quadrupole mass spectrometry. New wires produce Si with previous measurements; the activation energy for the SiH3 signal suggests its formation is catalyzed. Aged

  13. Gas jet assisted vapor deposition of yttria stabilized zirconia D. D. Hass and H. N. G. Wadleya

    E-Print Network [OSTI]

    Wadley, Haydn

    Gas jet assisted vapor deposition of yttria stabilized zirconia D. D. Hass and H. N. G. Wadleya February 2009 A gas jet assisted electron beam evaporation process for synthesizing yttria stabilized zirconia YSZ coatings has recently been reported. The process uses a rarefied inert gas jet to entrain

  14. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    implantation of Cu, Li and Ag into silicon doped GaN films grown by Metalorganic Chemical Vapor Deposition temperature (700-900°C) annealing. Low temperature (6K) photoluminescence (PL) for Cu-implanted GaN showed recovery of standard crystalline GaN features. Additional donor-acceptor pair features are observed below 3

  15. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28T23:59:59.000Z

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  16. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

    SciTech Connect (OSTI)

    Wanlass, M.

    1987-03-17T23:59:59.000Z

    A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

  17. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect (OSTI)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07T23:59:59.000Z

    R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  18. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Santra, T. S.; Liu, C. H. [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T. K. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P. [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T. K. [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

    2010-06-15T23:59:59.000Z

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  19. Preparation of amorphous electrochromic tungsten oxide and molybdenum oxide by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Tracy, C.E.; Benson, D.K.

    1986-09-01T23:59:59.000Z

    Preliminary experiments have been performed to probe the feasibility of using plasma enhanced chemical vapor deposition (PE--CVD) to prepare electrochromic thin films of tungsten oxide and molybdenum oxide by plasma reaction of WF/sub 6/, W(CO)/sub 6/, and Mo(CO)/sub 6/ with oxygen. Thin films produced in a 300 W, electrodeless, radio-frequency (rf), capacitive discharge were found to be electrochromic when tested with either liquid or solid electrolytes. Optical spectroscopy was performed on two electrochromic coatings after Li/sup +/ ion insertion from a propylene carbonate liquid electrolyte. Broad absorption peaks at --900 nm for WO/sub 3/ and 600 nm for MoO/sub 3/ were observed. Optical results for PE--CVD MoO/sub 3/ films differ from those reported for evaporated MoO/sub 3/ films which have an absorption peak at --800 nm. The shorter wavelength absorption in the PE--CVD MoO/sub 3/ films offers the potential for fabricating electrochromic devices with higher contrast ratios and less color change. Optical emission spectroscopy, Auger, and x-ray diffraction analyses indicate these thin film deposits to be predominantly amorphous tungsten and molybdenum oxides.

  20. Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

    DOE Patents [OSTI]

    Chow, R.; Loomis, G.E.; Thomas, I.M.

    1999-03-16T23:59:59.000Z

    Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (ca. 1.10--1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm. 2 figs.

  1. Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

    DOE Patents [OSTI]

    Chow, Robert (Livermore, CA); Loomis, Gary E. (Livermore, CA); Thomas, Ian M. (Livermore, CA)

    1999-01-01T23:59:59.000Z

    Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (.about.1.10-1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm.

  2. Molecular-Flow Properties of RIB Type Vapor-Transport Systems Using a Fast-Valve

    SciTech Connect (OSTI)

    Alton, Gerald D [ORNL] [ORNL; Bilheux, Hassina Z [ORNL] [ORNL; Zhang, Y. [Oak Ridge National Laboratory (ORNL)] [Oak Ridge National Laboratory (ORNL); Liu, Yuan [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    The advent of the fast-valve device, described previously, permits measurement of molecular-flow times of chemically active or inactive gaseous species through radioactive ion beam (RIB) target ion source systems, independent of size, geometry and materials of construction. Thus, decay losses of short-half-life RIBs can be determined for a given target/vapor-transport system in advance of on-line operation, thereby ascertaining the feasibility of the system design for successful processing of a given isotope. In this article, molecular-flow-time theory and experimentally measured molecular-flow time data are given for serial- and parallel-coupled Ta metal RIB vapor-transport systems similar to those used at ISOL based RIB facilities. In addition, the effect of source type on the molecular-flow time properties of a given system is addressed, and a chemical passivation method for negating surface adsorption enthalpies for chemically active gaseous species on Ta surfaces is demonstrated.

  3. Managing the Drivers of Air Flow and Water Vapor Transport in Existing Single Family Homes (Revised)

    SciTech Connect (OSTI)

    Cummings, J.; Withers, C.; Martin, E.; Moyer, N.

    2012-10-01T23:59:59.000Z

    This document focuses on managing the driving forces which move air and moisture across the building envelope. While other previously published Measure Guidelines focus on elimination of air pathways, the ultimate goal of this Measure Guideline is to manage drivers which cause air flow and water vapor transport across the building envelope (and also within the home), control air infiltration, keep relative humidity (RH) within acceptable limits, avoid combustion safety problems, improve occupant comfort, and reduce house energy use.

  4. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01T23:59:59.000Z

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  5. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect (OSTI)

    Urban, J. M.; Binder, J.; Wysmo?ek, A. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); D?browski, P.; Strupi?ski, W. [Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland); Kopciuszy?ski, M.; Ja?ochowski, M. [Institute of Physics, Maria Curie-Sk?odowska University, pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Klusek, Z. [Faculty of Physics and Applied Informatics, University of ?ód?, ul. Pomorska 149/153, 90-236 ?ód? (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland)

    2014-06-21T23:59:59.000Z

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12}?cm{sup ?2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  6. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2012-04-15T23:59:59.000Z

    We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

  7. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01T23:59:59.000Z

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

  8. Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes

    SciTech Connect (OSTI)

    Weiss, Theodor; Nowak, Martin; Zielasek, Volkmar, E-mail: zielasek@uni-bremen.de; Bäumer, Marcus [Institut für Angewandte und Physikalische Chemie, Universität Bremen, Leobener Straße UFT, D-28359 Bremen (Germany); Mundloch, Udo; Kohse-Höinghaus, Katharina [Physikalische Chemie I, Fakultät für Chemie, Universität Bielefeld, Universitätsstraße 25, D-33615 Bielefeld (Germany)

    2014-10-15T23:59:59.000Z

    Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct attachment to any typical UHV system for thin film analysis was designed and built. Besides compactness, fast, easy, and at the same time ultimately clean sample transfer between reactor and UHV was a major goal. It was achieved by a combination of sample manipulation parts, sample heater, and a shutter mechanism designed to fit all into a NW38 Conflat six-ways cross. The present reactor design is versatile to be employed for all commonly employed variants of CVD, including Atomic Layer Deposition. A demonstration of the functionality of the system is provided. First results of the setup (attached to an Omicron Multiprobe x-ray photoelectron spectroscopy system) on the temperature dependence of Pulsed Spray Evaporation-CVD of Ni films from Ni acetylacetonate as the precursor demonstrate the reactor performance and illustrate the importance of clean sample transfer without breaking vacuum in order to obtain unambiguous results on the quality of CVD-grown thin Ni films. The widely applicable design holds promise for future systematic studies of the fundamental processes during chemical vapor deposition or atomic layer deposition.

  9. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    SciTech Connect (OSTI)

    Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-09-15T23:59:59.000Z

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 M?/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10?k?/sq (of the order of its initial value). Moreover, the maximum current density of ?1.2?×?10{sup 7?}A/cm{sup 2} has been obtained for SLG (1?×?2.5??m{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  10. Energy deposition in t in films calculated using ellectron transport theory Theodore Biewer and Peter Rez

    E-Print Network [OSTI]

    Biewer, Theodore

    Energy deposition in t in films calculated using ellectron transport theory Theodore Biewer damage which can be related to the energy deposited in the specimen. We derive an expression for the energy deposition using the electron transport equation and give results for beam energies of l-10 k

  11. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Abbasi-Firouzjah, M. [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of)] [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Shokri, B. [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of) [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University G.C., Evin, Tehran (Iran, Islamic Republic of)

    2013-12-07T23:59:59.000Z

    Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF{sub 4}) was used for the deposition of the films in forms of two structures called as SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z}. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF{sub 4} flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z} films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiO{sub x}C{sub y} films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF{sub 4} in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiO{sub x}C{sub y}F{sub z} films and the leakage current of these films reduced by increment of the CF{sub 4} flow.

  12. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

    DOE Patents [OSTI]

    Deng, Xunming; Povolny, Henry S.

    2004-06-29T23:59:59.000Z

    A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

  13. Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

    SciTech Connect (OSTI)

    Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

    2013-12-23T23:59:59.000Z

    By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

  14. Photoresponse properties of large-area MoS{sub 2} atomic layer synthesized by vapor phase deposition

    SciTech Connect (OSTI)

    Luo, Siwei; Qi, Xiang, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn [Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, People's Republic of China Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)

    2014-10-28T23:59:59.000Z

    Photoresponse properties of a large area MoS{sub 2} atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS{sub 2} atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS{sub 2} devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

  15. Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

    SciTech Connect (OSTI)

    Yu, H.; Harberts, M.; Adur, R.; Hammel, P. Chris; Johnston-Halperin, E., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Lu, Y. [Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States); Epstein, A. J., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States)

    2014-07-07T23:59:59.000Z

    We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x???2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600?K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4?G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

  16. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  17. Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape

    SciTech Connect (OSTI)

    Cunha, T. H. R.; Ek-Weis, J.; Lacerda, R. G.; Ferlauto, A. S., E-mail: ferlauto@fisica.ufmg.br [Department of Physics, Federal University of Minas Gerais, Belo Horizonte 31270-901 (Brazil)

    2014-08-18T23:59:59.000Z

    The initial stages of graphene chemical vapor deposition at very low pressures (<10{sup ?5?}Torr) were investigated. The growth of large graphene domains (?up to 100??m) at very high rates (up to 3??m{sup 2} s{sup ?1}) has been achieved in a cold-wall reactor using a liquid carbon precursor. For high temperature growth (>900?°C), graphene grain shape and symmetry were found to depend on the underlying symmetry of the Cu crystal, whereas for lower temperatures (<900?°C), mostly rounded grains are observed. The temperature dependence of graphene nucleation density was determined, displaying two thermally activated regimes, with activation energy values of 6?±?1?eV for temperatures ranging from 900?°C to 960?°C and 9?±?1?eV for temperatures above 960?°C. The comparison of such dependence with the temperature dependence of Cu surface self-diffusion suggests that graphene growth at high temperatures and low pressures is strongly influenced by copper surface rearrangement. We propose a model that incorporates Cu surface self-diffusion as an essential process to explain the orientation correlation between graphene and Cu crystals, and which can clarify the difference generally observed between graphene domain shapes in atmospheric-pressure and low-pressure chemical vapor deposition.

  18. Plutonium-238 observations as a test of modeled transport and surface deposition of meteoric smoke particles

    E-Print Network [OSTI]

    Chipperfield, Martyn

    Plutonium-238 observations as a test of modeled transport and surface deposition of meteoric smoke chemistry-climate model (CCM) to simulate the transport and deposition of plutonium- 238 oxide nanoparticles. P. Chipperfield, and J. M. C. Plane (2013), Plutonium-238 observations as a test of modeled

  19. MOMENTUM AND THERMAL BOUNDARY-LAYER THICKNESS IN A STAGNATION FLOW CHEMICAL VAPOR DEPOSITION REACTOR

    E-Print Network [OSTI]

    Dandy, David

    REACTOR DAVID S. DANDY AND JUNGHEUM YUN Department of Chemical Engineering Colorado State University Fort deposition pedestal reactors. Expressions for the velocity and temperature profiles within the boundary

  20. Organic polymer thin films deposited on silicon and copper by plasma-enhanced chemical vapor deposition method and

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Chun-Dong, Jangan- Gu, Suwon 440-746, South Korea J. H. Boo Center for Advanced Plasma Surface Technology be grown under various deposition conditions. © 2005 American Vacuum Society. DOI: 10.1116/1.1946714 I as a dielectric and optical coating to inhibit corrosion.1,2 More- over, with increasing integration density

  1. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Seventh quarterly technical report, March 6, 1992--June 5, 1992

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-06-01T23:59:59.000Z

    Parallel research studies are underway on the following interrelated and fundamental subjects; Geometrical Approach to Determining the Sticking Probability of Particles Impacting on Convex Solid Surfaces; Correlations for High Schmidt Number Particle Deposition From Dilute Flowing Rational Engineering Suspensions; Average Capture Probability of Arriving Particles Which Are Distributed With ResPect to ImPact VelocitY and Incidence Angle (Relative to Deposit Substrate); Experimental and Theoretical Studies of Vapor Infiltration of Non-isothermal Granular Deposits; Effective Area/Volume of Populations of `MicroPorous` Aerosol Particles (Compact and `Fractal` Quasispherical Aggregates); Effects of Radiative Heat Transfer on the Coagulation Rates of Combustion-Generated Particles; Structure-Sensitivity of Total Mass Deposition Rates from Combustion Product Streams containing Coagulation-Aged Populations of Aggregated Primary Particles; and Na{sub 2}SO{sub 4} Chemical Vapor Deposition From Chlorine-containing Coal-Derived Gases.

  2. Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition

    E-Print Network [OSTI]

    Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor) In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline of the films exhibit classical characteristics of space-charge-limited current associated with insulators

  3. Simulation of chemical vapor infiltration and deposition based on 3D images: a local scale approach

    E-Print Network [OSTI]

    Boyer, Edmond

    infiltration of ceramic matrix composites is presented. This computational model requires a 3D representation/reaction problems; Random walks; 3D image-based modeling 1. Introduction Ceramic Matrix Composites and Carbon with a matrix. One of the most efficient ones is Chemical Vapor Infiltration (CVI), by which gaseous precursors

  4. Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

    E-Print Network [OSTI]

    Anderson, Timothy J.

    reaction [9­12], and simple chamber designs (e.g., vertical, cold-wall, axisymmetric chamber) to deposit flow injector can be used. A stagnation plane flow injector (for vertical, cold-wall CVD chambers homogeneous nucleation and/ or reactor wall deposition. For example, Holstein [17] de- monstrated that at high

  5. Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy

    DOE Patents [OSTI]

    Vernon, Stephen P. (Pleasanton, CA); Ceglio, Natale M. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis. Consequently there is a direct mapping between the coating thickness and substrate equation of motion which can be used to tailor the coating profile without the use of masks and apertures.

  6. Vapor-Phase Metalation by Atomic Layer Deposition in a Metal-Organic Framework

    E-Print Network [OSTI]

    encompass deposition onto micro- and nanopowders14 and coating of nanoparticle films15 as well as aerogel coating of porous materials that exhibit ultrahigh-aspect ratios.12,13 To date, some striking examples

  7. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Abrutis, Adulfas, E-mail: adulfas.abrutis@chf.vu.lt; Silimavicus, Laimis; Kubilius, Virgaudas; Murauskas, Tomas; Saltyte, Zita; Kuprenaite, Sabina; Plausinaitiene, Valentina [Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius (Lithuania)

    2014-03-15T23:59:59.000Z

    Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2?cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates were increased by a factor of ?10–20 compared with those of traditional CVD at the same substrate temperature (400?°C). In-doped ZnO films with thickness of ?150?nm deposited on sapphire-R grown at a wire current of 9?A exhibited a resistivity of ?2?×?10{sup ?3} ?cm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.

  8. Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

    SciTech Connect (OSTI)

    Chu, Yueh-Chieh [Institute of Microelectronics, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Tzeng, Yonhua, E-mail: tzengyo@mail.ncku.edu.tw [Institute of Microelectronics, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Auciello, Orlando [Department of Materials Science and Engineering and Bioengineering, University of Texas in Dallas, 800 W. Campbell Rd, Richardson, Texas 75080 (United States)

    2014-01-14T23:59:59.000Z

    Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320?mA constant biasing current and a negative biasing voltage decreasing from ?490?V to ?375?V for silicon substrates pre-heated to 800?°C. Method B employs 400?mA constant biasing current and a decreasing negative biasing voltage from ?375?V to ?390?V for silicon pre-heated to 900?°C. Method C employs ?350?V constant biasing voltage and an increasing biasing current up to 400?mA for silicon pre-heated to 800?°C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

  9. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-09-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization 'tools' for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical 'program' based on the notion of self-regulation'' set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical 'many-body' computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,[hor ellipsis]) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend 'sticking' and 'erosion' laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

  10. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2006-04-24T23:59:59.000Z

    We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

  11. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    SciTech Connect (OSTI)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555 (Japan)

    2014-09-29T23:59:59.000Z

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  12. Vapor deposition of water on graphitic surfaces: Formation of amorphous ice, bilayer ice, ice I, and liquid water

    SciTech Connect (OSTI)

    Lupi, Laura; Kastelowitz, Noah; Molinero, Valeria, E-mail: Valeria.Molinero@utah.edu [Department of Chemistry, The University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)

    2014-11-14T23:59:59.000Z

    Carbonaceous surfaces are a major source of atmospheric particles and could play an important role in the formation of ice. Here we investigate through molecular simulations the stability, metastability, and molecular pathways of deposition of amorphous ice, bilayer ice, and ice I from water vapor on graphitic and atomless Lennard-Jones surfaces as a function of temperature. We find that bilayer ice is the most stable ice polymorph for small cluster sizes, nevertheless it can grow metastable well above its region of thermodynamic stability. In agreement with experiments, the simulations predict that on increasing temperature the outcome of water deposition is amorphous ice, bilayer ice, ice I, and liquid water. The deposition nucleation of bilayer ice and ice I is preceded by the formation of small liquid clusters, which have two wetting states: bilayer pancake-like (wetting) at small cluster size and droplet-like (non-wetting) at larger cluster size. The wetting state of liquid clusters determines which ice polymorph is nucleated: bilayer ice nucleates from wetting bilayer liquid clusters and ice I from non-wetting liquid clusters. The maximum temperature for nucleation of bilayer ice on flat surfaces, T{sub B}{sup max} is given by the maximum temperature for which liquid water clusters reach the equilibrium melting line of bilayer ice as wetting bilayer clusters. Increasing water-surface attraction stabilizes the pancake-like wetting state of liquid clusters leading to larger T{sub B}{sup max} for the flat non-hydrogen bonding surfaces of this study. The findings of this study should be of relevance for the understanding of ice formation by deposition mode on carbonaceous atmospheric particles, including soot.

  13. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Maia da Costa, M.E.H.; Baumvol, I.J.R.; Radke, C.; Jacobsohn, L.G.; Zamora, R.R.M.; Freire, F.L. Jr. [Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Cx. Postal 3807, Rio de Janeiro, RJ, 22453-970 (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, 91540-000 (Brazil); Los Alamos National Laboratory, Materials Science and Technology Division, P. O. Box 1663, Los Alamos, New Mexico 87545 (United States); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Cx. Postal 3807, Rio de Janeiro, RJ, 22453-970 (Brazil)

    2004-11-01T23:59:59.000Z

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 deg. C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 deg. C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 deg. C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  14. CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES

    E-Print Network [OSTI]

    Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

    2014-02-24T23:59:59.000Z

    ,38 by atomic layer deposition (ALD) using a Cambridge Nanotech Savannah system and a 200°C process with tri[methyl]aluminium and water both carried in a N2(20 sccm) flow for 200 cycles 39,40. Ta layers are sputter deposited (100W, 35sccm Ar, 3.5×10-3 mbar... it is optically compensated). Thermal CVD. CNT growth is also carried out in a custom-built cold-wall CVD chamber with a resistive graphite heater element. Samples are heated to ~670°C and annealed for 5 min in a non-reducing (~10-3 mbar vacuum) or reducing...

  15. Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, North Carolina 27695-7920 Received 7 January 1999; accepted 21 May 1999 Active sampling mass spectrometry has been used for process

  16. Parallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1

    E-Print Network [OSTI]

    Devine, Karen

    , memory, and scalability of distributed memory parallel computers. An unstructured finite element transport from the fluid mechanics and heat transfer. Both works used solution procedures that require the reacting flow model and numerical method and summarize representative calculations using MPSalsa

  17. Thermal expansion of low-pressure chemical vapor deposition polysilicon films

    E-Print Network [OSTI]

    Ballarini, Roberto

    polysilicon films were deposited on the sub- strates by LPCVD in a hot-walled horizontal tube fur- nace with an inner diameter of 225 mm, using SiH4 at a flow rate of 100 sccm and a pressure of 300 mtorr J. Mater

  18. The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

    SciTech Connect (OSTI)

    Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

    2008-06-24T23:59:59.000Z

    The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

  19. Visible Light Photocatalysis with Nitrogen-Doped Titanium Dioxide Nanoparticles Prepared by Plasma Assisted Chemical Vapor Deposition

    SciTech Connect (OSTI)

    Buzby,S.; Barakat, M.; Lin, H.; Ni, C.; Rykov, S.; Chen, J.; Shah, S.

    2006-01-01T23:59:59.000Z

    Nitrogen-doped TiO{sub 2} nanoparticles were synthesized via plasma assisted metal organic chemical vapor deposition. Nitrogen dopant concentration was varied from 0 to 1.61 at. %. The effect of nitrogen ion doping on visible light photocatalysis has been investigated. Samples were analyzed by various analytical techniques such as x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. Titanium tetraisopropoxide was used as the titanium precursor, while rf-plasma-decomposed ammonia was used as the source for nitrogen doping. The N-doped TiO{sub 2} nanoparticles were deposited on stainless steel mesh under a flow of Ar and O2 gases at 600 {sup o}C in a tube reactor. The photocatalytic activity of the prepared N-doped TiO{sub 2} samples was tested by the degradation of 2-chlorophenol (2-CP) in an aqueous solution using a visible lamp equipped with an UV filter. The efficiency of photocatalytic oxidation of 2-CP was measured using high performance liquid chromatography. Results obtained revealed the formation of N-doped TiO{sub 2} samples as TiO{sub 2-x}N{sub x}, and a corresponding increase in the visible light photocatalytic activity.

  20. Crystalline SiGe films grown on Si substrates using laser-assisted plasma-enhanced chemical vapor deposition at low temperature

    SciTech Connect (OSTI)

    Lee, C.-T.; Cheng, J.-H.; Lee, H.-Y. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China) and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701 (China); Department of Electro-Optical Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)

    2007-08-27T23:59:59.000Z

    Compared with conventional plasma-enhanced chemical vapor deposition, laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) can be used to deposit crystalline SiGe films on Si substrates at low temperature. In the LAPECVD system, a CO{sub 2} laser with a wavelength of 10.6 {mu}m was utilized to assist the pyrolytical decomposition of SiH{sub 4} and GeH{sub 4} reactant gases. The resultant Si{sub 0.78}Ge{sub 0.22} films were obtained and verified through the use of the Auger electron spectroscopy measurement. As the diffraction pattern of a glancing incident angle X-ray diffraction measurement had indicated, several significant diffraction peaks corresponding to a diamond-cubic structure at (111) (220), and (311) were clearly observed. Crystalline SiGe films were also identified by the electron diffraction pattern of high-resolution transmission electron microscopy images.

  1. ZnO nanorod growth by plasma-enhanced vapor phase transport with different growth durations

    SciTech Connect (OSTI)

    Kim, Chang-Yong; Oh, Hee-bong [Department of Nano Science and Engineering, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, Hyukhyun, E-mail: hhryu@inje.ac.kr [Department of Nano Science and Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Yun, Jondo [Department of Nano Science and Engineering, Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of); Lee, Won-Jae [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of)

    2014-09-01T23:59:59.000Z

    In this study, the structural properties of ZnO nanostructures grown by plasma-enhanced vapor phase transport (PEVPT) were investigated. Plasma-treated oxygen gas was used as the oxygen source for the ZnO growth. The structural properties of ZnO nanostructures grown for different durations were measured by scanning electron microscopy, x-ray diffraction, and transmission electron microscopy. The authors comprehensively analyzed the growth of the ZnO nanostructures with different growth durations both with and without the use of plasma-treated oxygen gas. It was found that PEVPT has a significant influence on the growth of the ZnO nanorods. PEVPT with plasma-treated oxygen gas facilitated the generation of nucleation sites, and the resulting ZnO nanorod structures were more vertical than those prepared by conventional VPT without plasma-treated oxygen gas. As a result, the ZnO nanostructures grown using PEVPT showed improved structural properties compared to those prepared by the conventional VPT method.

  2. Multiwalled Carbon Nanotube Forest Grown via Chemical Vapor Deposition from Iron Catalyst Nanoparticles, by XPS

    SciTech Connect (OSTI)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25T23:59:59.000Z

    Carbon nanotubes (CNTs) have unique chemical and physical properties. Herein, we report an XPS analysis of a forest of multiwalled CNTs using monochromatic Al K? radiation. Survey scans show only one element: carbon. The carbon 1s peak is centered 284.5 eV. The C 1s envelope also shows the expected ? ? ?* shake-up peak at ca. 291 eV. The valence band and carbon KVV Auger signals are presented. When patterned, the CNT forests can be used as a template for subsequent deposition of metal oxides to make thin layer chromatography plates.1-3

  3. Influences of clouds and rain on the large-scale transport and deposition of sulfur

    SciTech Connect (OSTI)

    Luecken, D.J.; Berkowitz, C.M.; Easter, R.C.

    1991-07-01T23:59:59.000Z

    This paper describes the application of a three-dimensional, global-scale Eulerian model with an explicit description of cloud and chemical processes. Simulation results describing the transport of sulfur from North America and Europe across the north Atlantic Ocean during a climatological July are presented. Wet deposition was found to contribute slightly more to total sulfur deposition than dry deposition, a feature explained by the large amounts of precipitation during this month. The wet deposition patterns did not always correspond to the emissions patterns. The precipitation rate and spatial distribution had a large effect on the calculated concentrations of soluble sulfur species. 10 refs., 7 figs., 1 tab.

  4. Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition

    SciTech Connect (OSTI)

    Matsuoka, M.; Isotani, S.; Mittani, J.C.R.; Chubaci, J.F.D.; Ogata, K.; Kuratani, N. [Institute of Physics, University of Sao Paulo, C. P. 66318, 05315-970, Sao Paolo, SP (Brazil); Nissin Electric Company, Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyota 615-8686 (Japan)

    2005-01-01T23:59:59.000Z

    Thin titanium nitride films were prepared at room temperature by titanium metal vapor deposition on silicon substrates with simultaneous irradiation by a 2 keV nitrogen ion beam. Arrival rate ratios, ARR(N/Ti), defined as the ratio of the flux of incident atomic nitrogen particles in the ion beam relative to the flux of titanium atoms transported to the substrate, ranged from 0.17 to 2.5. The gas pressure in the vacuum chamber was maintained at 1.3x10{sup -3} or 6.7x10{sup -3} Pa during the deposition and irradiation process. Analyses of Ti 2p x-ray photoelectron spectroscopy spectra indicated the presence of metal Ti{sup 0}, nitride TiN, oxide TiO{sub 2}, oxynitride TiN{sub x}O{sub y}, and carbide TiC phases. The Ti{sup 0} phase was observed exclusively and predominantly in the films prepared at 1.3x10{sup -3} Pa and ARR(N/Ti)=0.17, 0.21, and 0.28, and the TiN phase is major in the others, as confirmed by the x-ray diffractometry analyses. The chemical composition ratio N/Ti in the films prepared at 1.3x10{sup -3} Pa increased linearly with increasing ARR(N/Ti) up to ARR(N/Ti)=0.42 and tended to be constant with further increase in ARR(N/Ti), while this ratio in the films prepared at 6.7x10{sup -3} Pa was almost constant independently of ARR(N/Ti), similar to the constant value observed at 1.3x10{sup -3} Pa and higher ARR(N/Ti). This dependence may be understood by comparison with the flux of evaporated titanium atoms, the flux of nitrogen in the beam, and the impingement rate of nitrogen gas in the vacuum chamber, evaluated through the kinetic theory of gases. On the other hand, titanium is known to be one of the chemically active materials which form stable compounds with gases by chemisorption, this fact leading to considerable incorporation of contaminant oxygen and carbon in the depositing titanium film.

  5. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  6. Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

    SciTech Connect (OSTI)

    Kawase, Kazumasa, E-mail: Kawase.Kazumasa@ak.MitsubishiElectric.co.jp; Motoya, Tsukasa; Uehara, Yasushi [Advanced Technology R and D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661 (Japan); Teramoto, Akinobu; Suwa, Tomoyuki; Ohmi, Tadahiro [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2014-09-01T23:59:59.000Z

    Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO{sub 2} films with the Ar plasma treatments were investigated. The mass density depth profiles were estimated with X-Ray Reflectivity (XRR) analysis using synchrotron radiation. The densities of carrier trap centers due to defects of Si-O bond network were estimated with X-ray Photoelectron Spectroscopy (XPS) time-dependent measurement. The changes of the thicknesses due to the oxidation of Si substrates were estimated with the XRR and XPS. The mass densities of the CVD-SiO{sub 2} films are increased by the Ar plasma treatments. The carrier trap densities of the films are decreased by the treatments. The thicknesses of the films are not changed by the treatments. It has been clarified that the mass densification and defect restoration in the CVD-SiO{sub 2} films are caused by the Ar plasma treatments without the oxidation of the Si substrates.

  7. Analysis of buoyancy and tube rotation relative to the modified chemical vapor deposition process

    SciTech Connect (OSTI)

    Choi, M.; Lin, Y.T.; Greif, R. (Univ. of California, Berkeley (USA))

    1990-11-01T23:59:59.000Z

    The secondary flows resulting from buoyancy effects in respect to the MCVD process have been studied in a rotating horizontal tube using a perturbation analysis. The three-dimensional secondary flow fields have been determined at several axial locations in a tube whose temperature varies in both the axial and circumferential directions for different rotational speeds. For small rotational speeds, buoyancy and axial convection are dominant and the secondary flow patterns are different in the regions near and far from the torch. For moderate rotational speeds, the effects of buoyancy, axial and angular convection are all important in the region far from the torch where there is a spiraling secondary flow. For large rotational speeds, only buoyancy and angular convection effects are important and no spiraling secondary motions occurs far downstream. Compared with thermophoresis, the important role of buoyancy in determining particle trajectories in MCVD is presented. As the rotational speed increases, the importance of the secondary flow decreases and the thermophoretic contribution vecomes more important. It is noted that thermophoresis is considered to be the main cause of particle deposition in the MCVD process.

  8. Comparison of precursor infiltration into polymer thin films via atomic layer deposition and sequential vapor infiltration using in-situ quartz crystal microgravimetry

    SciTech Connect (OSTI)

    Padbury, Richard P.; Jur, Jesse S., E-mail: jsjur@ncsu.edu [Department of Textile Engineering, Chemistry and Science, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-01T23:59:59.000Z

    Previous research exploring inorganic materials nucleation behavior on polymers via atomic layer deposition indicates the formation of hybrid organic–inorganic materials that form within the subsurface of the polymer. This has inspired adaptations to the process, such as sequential vapor infiltration, which enhances the diffusion of organometallic precursors into the subsurface of the polymer to promote the formation of a hybrid organic–inorganic coating. This work highlights the fundamental difference in mass uptake behavior between atomic layer deposition and sequential vapor infiltration using in-situ methods. In particular, in-situ quartz crystal microgravimetry is used to compare the mass uptake behavior of trimethyl aluminum in poly(butylene terephthalate) and polyamide-6 polymer thin films. The importance of trimethyl aluminum diffusion into the polymer subsurface and the subsequent chemical reactions with polymer functional groups are discussed.

  9. Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

    2014-01-13T23:59:59.000Z

    Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

  10. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26T23:59:59.000Z

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  11. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, John P. (Idaho Falls, ID); Larson, Ronald A. (Idaho Falls, ID); Goodrich, Lorenzo D. (Shelley, ID); Hall, Harold J. (Idaho Falls, ID); Stoddard, Billy D. (Idaho Falls, ID); Davis, Sean G. (Idaho Falls, ID); Kaser, Timothy G. (Idaho Falls, ID); Conrad, Frank J. (Albuquerque, NM)

    1995-01-01T23:59:59.000Z

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

  12. A comparison of the marginal adaptation of cathode-arc vapor-deposited titanium and cast base metal copings.

    E-Print Network [OSTI]

    Wu, Jean C; Lai, Li-Chung; Sheets, Cherilyn G; Earthman, James; Newcomb, Robert

    2011-01-01T23:59:59.000Z

    titanium reacts with oxygen, hydrogen, and nitrogen, whichdesired titanium coping thickness is achieved, nitrogen gaspurity nitrogen gas was added to the titanium vapor after

  13. Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

    SciTech Connect (OSTI)

    Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. John, E-mail: ajhart@mit.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2013-11-15T23:59:59.000Z

    Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes.

  14. Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics

    SciTech Connect (OSTI)

    Bayiati, P.; Tserepi, A.; Petrou, P. S.; Kakabakos, S. E.; Misiakos, K.; Gogolides, E. [Institute of Microelectronics-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece); Institute of Radioisotopes and Radiodiagnostic Products-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece); Institute of Microelectronics-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece)

    2007-05-15T23:59:59.000Z

    The present work focuses on the plasma deposition of fluorocarbon (FC) films on surfaces and the electrostatic control of their wettability (electrowetting). Such films can be employed for actuation of fluid transport in microfluidic devices, when deposited over patterned electrodes. Here, the deposition was performed using C{sub 4}F{sub 8} and the plasma parameters that permit the creation of films with optimized properties desirable for electrowetting were established. The wettability of the plasma-deposited surfaces was characterized by means of contact angle measurements (in the static and dynamic mode). The thickness of the deposited films was probed in situ by means of spectroscopic ellipsometry, while the surface roughness was provided by atomic force microscopy. These plasma-deposited FC films in combination with silicon nitride, a material of high dielectric constant, were used to create a dielectric structure that requires reduced voltages for successful electrowetting. Electrowetting experiments using protein solutions were conducted on such optimized dielectric structures and were compared with similar structures bearing commercial spin-coated Teflon registered amorphous fluoropolymer (AF) film as the hydrophobic top layer. Our results show that plasma-deposited FC films have desirable electrowetting behavior and minimal protein adsorption, a requirement for successful transport of biological solutions in 'digital' microfluidics.

  15. Growth of Large-Area Aligned Molybdenum Nanowires by High Temperature Chemical Vapor Deposition: Synthesis, Growth Mechanism, and Device Application

    E-Print Network [OSTI]

    Wang, Zhong L.

    , thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned nanowires with H2 gas.6d-f However, the reduction process degrades the crystal- linity of the nanowires

  16. Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels

    SciTech Connect (OSTI)

    Klobukowski, Erik R [ORNL; Tenhaeff, Wyatt E [ORNL; McCamy, James [PPG; Harris, Caroline [PPG; Narula, Chaitanya Kumar [ORNL

    2013-01-01T23:59:59.000Z

    The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

  17. NREL: Awards and Honors - High-Rate Vapor Transport Deposition for CdTe PV

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Saleshttp://www.fnal.gov/directorate/nalcal/nalcal02_07_05_files/nalcal.gifNREL NREL Refines Method

  18. Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Vispute, R D [Blue Wave Semiconductors; Ermer, Henry K [Blue Wave Semiconductors; Sinsky, Phillip [Blue Wave Semiconductors; Seiser, Andrew [Blue Wave Semiconductors; Shaw, Robert W [ORNL; Wilson, Leslie L [ORNL

    2014-01-01T23:59:59.000Z

    Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

  19. Mat. Res. Soc. Symp. Proc. Vol. 612 2000 Materials Research Society VOLATILE LIQUID PRECURSORS FOR THE CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    . These tungsten oxide films can be used as part of electrochromic windows, mirrors or displays. Physical in microelectronics.5 CVD using both W(CO)6 vapor and oxygen gas, O2, has produced electrochromic films of tungsten

  20. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  1. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Dong [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China)] [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China); Miao, Lihua [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034 (China)

    2013-11-18T23:59:59.000Z

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  2. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Lin, Zhiyu; Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn; Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071 (China); Su, Xujun [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123 (China); Shi, Xuefang [School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710071 (China)

    2014-08-25T23:59:59.000Z

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  3. PARTICLE TRANSPORTATION AND DEPOSITION IN HOT GAS FILTER VESSELS - A COMPUTATIONAL AND EXPERIMENTAL MODELING APPROACH

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    2002-07-01T23:59:59.000Z

    In this project, a computational modeling approach for analyzing flow and ash transport and deposition in filter vessels was developed. An Eulerian-Lagrangian formulation for studying hot-gas filtration process was established. The approach uses an Eulerian analysis of gas flows in the filter vessel, and makes use of the Lagrangian trajectory analysis for the particle transport and deposition. Particular attention was given to the Siemens-Westinghouse filter vessel at Power System Development Facility in Wilsonville in Alabama. Details of hot-gas flow in this tangential flow filter vessel are evaluated. The simulation results show that the rapidly rotation flow in the spacing between the shroud and the vessel refractory acts as cyclone that leads to the removal of a large fraction of the larger particles from the gas stream. Several alternate designs for the filter vessel are considered. These include a vessel with a short shroud, a filter vessel with no shroud and a vessel with a deflector plate. The hot-gas flow and particle transport and deposition in various vessels are evaluated. The deposition patterns in various vessels are compared. It is shown that certain filter vessel designs allow for the large particles to remain suspended in the gas stream and to deposit on the filters. The presence of the larger particles in the filter cake leads to lower mechanical strength thus allowing for the back-pulse process to more easily remove the filter cake. A laboratory-scale filter vessel for testing the cold flow condition was designed and fabricated. A laser-based flow visualization technique is used and the gas flow condition in the laboratory-scale vessel was experimental studied. A computer model for the experimental vessel was also developed and the gas flow and particle transport patterns are evaluated.

  4. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01T23:59:59.000Z

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  5. Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

    SciTech Connect (OSTI)

    Steirer, K. Xerxes [Colorado School of Mines, Golden, CO (United States); Chesin, Jordan P. [Division of Engineering, Brown Univ., Providence, RI (United States); Widjonarko, N. Edwin [University of Colorado, Dept of Physics, Boulder, CO (United States); Berry, Joseph J. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Miedaner, Alexander [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ginley, David S. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Olson, Dana C. [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2010-01-01T23:59:59.000Z

    Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 °C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O{sub 2}-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT:PSS.

  6. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

    E-Print Network [OSTI]

    Gilchrist, James F.

    Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor Seebeck coefficient and resistance measurement system for thermoelectric materials in the thin disk geometry Rev. Sci. Instrum. 83, 025101 (2012) High-temperature thermoelectric properties of Cu1­xInTe2

  7. Numerical modeling of mixed sediment resuspension, transport, and deposition during the March 1998 episodic events in southern Lake

    E-Print Network [OSTI]

    Numerical modeling of mixed sediment resuspension, transport, and deposition during the March 1998 sediment resuspension of mixed (cohesive plus noncohesive) sediment is developed and applied to quantitatively simulate the March 1998 resuspension events in southern Lake Michigan. Some characteristics

  8. NORIA - a finite element computer program for analyzing water, vapor, air, and energy transport in porous media

    SciTech Connect (OSTI)

    Bixler, N.E.

    1985-08-01T23:59:59.000Z

    NORIA is a finite element computer program that solves four nonlinear, parabolic, partial differential equations simultaneously. The four equations describe the transport of water, water vapor, air, and energy through partially saturated porous media. The numerical procedure uses the standard Galerkin finite element method to handle spatial discretization of two-dimensional domains with either planar symmetry or axisymmetry. Time integration is performed by a third-order predictor-corrector scheme that uses error estimates to automatically adjust time-step size so as to maintain uniform local time truncation error throughout the calculation. Thus, the user is not required to select time-step size except at the first time step. Nearly all material properties, such as permeability, can either be set to constant values or can be defined as functions of the dependent and independent variables by user-supplied subroutines. The gas phase is taken to be ideal. This report is intended primarily as a user`s manual but also includes discussions of the theory of two-phase transport in porous media and the numerical procedure used in NORIA. 33 refs., 10 figs., 1 tab.

  9. A generalized framework for in-line energy deposition during steady-state Monte Carlo radiation transport

    SciTech Connect (OSTI)

    Griesheimer, D. P. [Bertis Atomic Power Laboratory, P.O. Box 79, West Mifflin, PA 15122 (United States); Stedry, M. H. [Knolls Atomic Power Laboratory, P.O. Box 1072, Schenectady, NY 12301 (United States)

    2013-07-01T23:59:59.000Z

    A rigorous treatment of energy deposition in a Monte Carlo transport calculation, including coupled transport of all secondary and tertiary radiations, increases the computational cost of a simulation dramatically, making fully-coupled heating impractical for many large calculations, such as 3-D analysis of nuclear reactor cores. However, in some cases, the added benefit from a full-fidelity energy-deposition treatment is negligible, especially considering the increased simulation run time. In this paper we present a generalized framework for the in-line calculation of energy deposition during steady-state Monte Carlo transport simulations. This framework gives users the ability to select among several energy-deposition approximations with varying levels of fidelity. The paper describes the computational framework, along with derivations of four energy-deposition treatments. Each treatment uses a unique set of self-consistent approximations, which ensure that energy balance is preserved over the entire problem. By providing several energy-deposition treatments, each with different approximations for neglecting the energy transport of certain secondary radiations, the proposed framework provides users the flexibility to choose between accuracy and computational efficiency. Numerical results are presented, comparing heating results among the four energy-deposition treatments for a simple reactor/compound shielding problem. The results illustrate the limitations and computational expense of each of the four energy-deposition treatments. (authors)

  10. MELCOR 1.8.5 modeling aspects of fission product release, transport and deposition an assessment with recommendations.

    SciTech Connect (OSTI)

    Gauntt, Randall O.

    2010-04-01T23:59:59.000Z

    The Phebus and VERCORS data have played an important role in contemporary understanding and modeling of fission product release and transport from damaged light water reactor fuel. The data from these test programs have allowed improvement of MELCOR modeling of release and transport processes for both low enrichment uranium fuel as well as high burnup and mixed oxide (MOX) fuels. This paper discusses the synthesis of these findings in the MELCOR severe accident code. Based on recent assessments of MELCOR 1.8.5 fission product release modeling against the Phebus FPT-1 test and on observations from the ISP-46 exercise, modifications to the default MELCOR 1.8.5 release models are recommended. The assessments identified an alternative set of Booth diffusion parameters recommended by ORNL (ORNL-Booth), which produced significantly improved release predictions for cesium and other fission product groups. Some adjustments to the scaling factors in the ORNL-Booth model were made for selected fission product groups, including UO{sub 2}, Mo and Ru in order to obtain better comparisons with the FPT-1 data. The adjusted model, referred to as 'Modified ORNL-Booth,' was subsequently compared to original ORNL VI fission product release experiments and to more recently performed French VERCORS tests, and the comparisons was as favorable or better than the original CORSOR-M MELCOR default release model. These modified ORNL-Booth parameters, input to MELCOR 1.8.5 as 'sensitivity coefficients' (i.e. user input that over-rides the code defaults) are recommended for the interim period until improved release models can be implemented into MELCOR. For the case of ruthenium release in air-oxidizing conditions, some additional modifications to the Ru class vapor pressure are recommended based on estimates of the RuO{sub 2} vapor pressure over mildly hyperstoichiometric UO{sub 2}. The increased vapor pressure for this class significantly increases the net transport of Ru from the fuel to the gas stream. A formal model is needed. Deposition patterns in the Phebus FPT-1 circuit were also significantly improved by using the modified ORNL-Booth parameters, where retention of lower volatile Cs{sub 2}MoO{sub 4} is now predicted in the heated exit regions of the FPT-1 test, bringing down depositions in the FPT-1 steam generator tube to be in closer alignment with the experimental data. This improvement in 'RCS' deposition behavior preserves the overall correct release of cesium to the containment that was observed even with the default CORSOR-M model. Not correctly treated however is the release and transport of Ag to the FPT-1 containment. A model for Ag release from control rods is presently not available in MELCOR. Lack of this model is thought to be responsible for the underprediction by a factor of two of the total aerosol mass to the FPT-1 containment. It is suggested that this underprediction of airborne mass led to an underprediction of the aerosol agglomeration rate. Underprediction of the agglomeration rate leads to low predictions of the aerosol particle size in comparison to experimentally measured ones. Small particle size leads low predictions of the gravitational settling rate relative to the experimental data. This error, however, is a conservative one in that too-low settling rate would result in a larger source term to the environment. Implementation of an interim Ag release model is currently under study. In the course of this assessment, a review of MELCOR release models was performed and led to the identification of several areas for future improvements to MELCOR. These include upgrading the Booth release model to account for changes in local oxidizing/reducing conditions and including a fuel oxidation model to accommodate effects of fuel stoichiometry. Models such as implemented in the French ELSA code and described by Lewis are considered appropriate for MELCOR. A model for ruthenium release under air oxidizing conditions is also needed and should be included as part of a fuel oxidation model since fuel stoichiometry is a fundamen

  11. Measurement and modeling of Ar/H2/CH4 arc jet discharge chemical vapor deposition reactors. I. Intercomparison

    E-Print Network [OSTI]

    Bristol, University of

    of thin, polycrystalline diamond films, and the results of a two-dimensional r,z computer model domains. dc arc jets offer considerable advantages as a route to deposition of polycrystalline diamond

  12. A three-dimensional analysis of the flow and heat transfer for the modified chemical vapor deposition process including buoyancy, variable properties, and tube rotation

    SciTech Connect (OSTI)

    Lin, Y.T.; Choi, M.; Greif, R. (Univ. of California, Berkeley (USA))

    1991-05-01T23:59:59.000Z

    A study has been made of the heat transfer, flow, and particle deposition relative to the modified chemical vapor deposition (MCVD) process. The effects of variable properties, buoyancy, and tube rotation have been included in the study. The resulting three-dimensional temperature and velocity fields have been obtained for a range of conditions. The effects of buoyancy result in asymmetric temperature and axial velocity profiles with respect to the tube axis. Variable properties cause significant variations in the axial velocity along the tube and in the secondary flow in the region near the torch. Particle trajectories are shown to be strongly dependent on the tube rotation and are helices for large rotational speeds. The component of secondary flow in the radial direction is compared to the thermophoretic velocity, which is the primary cause of particle deposition in the MCVD process. Over the central portion of the tube the radial component of the secondary flow is most important in determining the motion of the particles.

  13. Microstructure and interface control of GaN/MgAl{sub 2}O{sub 4} grown by metalorganic chemical vapor deposition: Substrate-orientation dependence

    SciTech Connect (OSTI)

    He, G.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chichibu, Shigefusa F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

    2011-07-15T23:59:59.000Z

    GaN films with single-crystal and polycrystalline structure were deposited on (111) and (100) MgAl{sub 2}O{sub 4} substrates by metalorganic chemical vapor deposition using a substrate modified by chemical etching and thermal passivation. The interface structure and chemical bonding state of the GaN/MgAl{sub 2}O{sub 4} interface was investigated using angle-resolved x-ray photoelectron spectroscopy and resulting valence band spectra. Our results indicate that the Al{sub 2}O{sub 3} buffered layer induced by thermal passivation of the (111) substrate remains unchanged during GaN deposition, which is primarily responsible for the epitaxial growth of GaN on (111) MgAl{sub 2}O{sub 4} substrate. However, for the as-processed (100) substrate, interfacial reactions take place between the formed MgO-terminated surface and GaN films and GaN with a polycrystalline structure on (100) substrate forms. From the interface engineering viewpoint, the appropriate interface modification will allow control of the interface reaction to obtain high-quality GaN films for future optoelectronic devices.

  14. Rapid Migration of Radionuclides Leaked from High-Level Water Tanks; A Study of Salinity Gradients, Wetted Path Geometry and Water Vapor Transport

    SciTech Connect (OSTI)

    Anderson l. Ward; Glendon W. Gee; John S. Selker; Clay Cooper

    2002-04-24T23:59:59.000Z

    The basis of this study was the hypothesis that the physical and chemical properties of hypersaline tank waste could lead to wetting from instability and fingered flow following a tank leak. Thus, the goal of this project was to develop an understanding of the impacts of the properties of hypersaline fluids on transport through the unsaturated zone beneath Hanford's Tank Farms. There were three specific objectives (i) to develop an improved conceptualization of hypersaline fluid transport in laboratory (ii) to identify the degree to which field conditions mimic the flow processes observed in the laboratory and (iii) to provide a validation data set to establish the degree to which the conceptual models, embodied in a numerical simulator, could explain the observed field behavior. As hypothesized, high ionic strength solutions entering homogeneous pre-wetted porous media formed unstable wetting fronts atypical of low ionic strength infiltration. In the field, this mechanism could for ce flow in vertical flow paths, 5-15 cm in width, bypassing much of the media and leading to waste penetration to greater depths than would be predicted by current conceptual models. Preferential flow may lead to highly accelerated transport through large homogeneous units, and must be included in any conservative analysis of tank waste losses through coarse-textured units. However, numerical description of fingered flow using current techniques has been unreliable, thereby precluding tank-scale 3-D simulation of these processes. A new approach based on nonzero, hysteretic contract angles and fluid-dependent liquid entry has been developed for the continuum scale modeling of fingered flow. This approach has been coupled with and adaptive-grid finite-difference solver to permit the prediction of finger formation and persistence form sub centimeter scales to the filed scale using both scalar and vector processors. Although laboratory experiments demonstrated that elevated surface tens ion of imbibing solutions can enhance vertical fingered flow, this phenomenon was not observed in the field. Field tests showed that the fingered flow behavior was overwhelmed by the variability in texture resulting from differences in the depositional environment. Field plumes were characterized by lateral spreading with an average width to depth aspect ratio of 4. For both vertical fingers and lateral flow, the high ionic strength contributed to the vapor phase dilution of the waste, which increased waste volume and pushed the wetting from well beyond what would have occurred if the volume of material had remained unchanged from that initially released into the system. It was also observed that following significant vapor-phase dilution of this waste simulants that streams of colloids were ejected from the sediment surfaces. It was shown that due to the high-sodium content of the tank wastes the colloids were deflocculated below a critical salt concentration in Hanford sediments. Th e released colloids, which at the site would be expected to carry the bulk of the sorbed heavy metals and radioisotopes, were mobile though coarse Hanford sediments, but clogged finer layers. The developments resulting from this study are already being applied at Hanford in the nonisothermal prediction of the hypersaline, high pH waste migration in tank farms and in the development of inverse methods for history matching under DOE's Groundwater/Vadose Zone Integration Project at Hanford.

  15. Rapid Migration of Radionuclides Leaked from High-Level Water Tanks: A Study of Salinity Gradients, Wetted Path Geometry and Water Vapor Transport

    SciTech Connect (OSTI)

    Anderson L. Ward; Glendon W. Gee; John S. Selker; Caly Cooper

    2002-04-24T23:59:59.000Z

    The basis of this study was the hypothesis that the physical and chemical properties of hypersaline tank waste could lead to wetting from instability and fingered flow following a tank leak. Thus, the goal of this project was to develop an understanding of the impacts of the properties of hypersaline fluids on transport through the unsaturated zone beneath Hanford's Tank Farms. There were three specific objectives (i) to develop an improved conceptualization of hypersaline fluid transport in laboratory (ii) to identify the degree to which field conditions mimic the flow processes observed in the laboratory and (iii) to provide a validation data set to establish the degree to which the conceptual models, embodied in a numerical simulator, could explain the observed field behavior. As hypothesized, high ionic strength solutions entering homogeneous pre-wetted porous media formed unstable wetting fronts a typical of low ionic strength infiltration. In the field, this mechanism could force flow in vertical flow paths, 5-15 cm in width, bypassing much of the media and leading to waste penetration to greater depths than would be predicted by current conceptual models. Preferential flow may lead to highly accelerated transport through large homogeneous units, and must be included in any conservative analysis of tank waste losses through coarse-textured units. However, numerical description of fingered flow using current techniques has been unreliable, thereby precluding tank-scale 3-D simulation of these processes. A new approach based on nonzero, hysteretic contact angles and fluid-dependent liquid entry has been developed for the continuum scale modeling of fingered flow. This approach has been coupled with and adaptive-grid finite-difference solver to permit the prediction of finger formation and persistence form sub centimeter scales to the filed scale using both scalar and vector processors. Although laboratory experiments demonstrated that elevated surface tension of imbibing solutions can enhance vertical fingered flow, this phenomenon was not observed in the field. Field tests of showed that the fingered flow behavior was overwhelmed by the variability in texture resulting from differences in the depositional environment. Field plumes were characterized by lateral spreading with an average width to depth aspect ratio of 4. For both vertical fingers and lateral flow, the high ionic strength contributed to the vapor phase dilution of the waste, which increased waste volume and pushed the wetting from well beyond what would have occurred if the volume of material had remained unchanged from that initially released into the system. It was also observed that following significant vapor-phase dilution of the waste simulants that streams of colloids were ejected from the sediment surfaces. It was shown that due to the high-sodium content of the tank wastes the colloids were deflocculated below a critical salt concentration in Hanford sediment s. The released colloids, which at the site would be expected to carry the bulk of the sorbed heavy metals and radioisotopes, were mobile though coarse Hanford sediments, but clogged finer layers. The developments resulting from this study are already being applied at Hanford in the nonisothermal prediction of the hypersaline, high pH waste migration in tank farms and in the development of inverse methods for history matching under DOE's Groundwater/Vadose Zone Integration Project at Hanford.

  16. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02T23:59:59.000Z

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  17. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions

    SciTech Connect (OSTI)

    Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

    2014-08-18T23:59:59.000Z

    Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  18. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

    2010-10-25T23:59:59.000Z

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  19. Co-Pt core-shell nanostructured catalyst prepared by selective chemical vapor pulse deposition of Pt on Co as a cathode in polymer electrolyte fuel cells

    SciTech Connect (OSTI)

    Seo, Sang-Joon; Chung, Ho-Kyoon [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Yoo, Ji-Beom [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Chae, Heeyeop; Seo, Seung-Woo; Min Cho, Sung, E-mail: sungmcho@skku.edu [School of Chemical Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of)

    2014-01-15T23:59:59.000Z

    A new type of PtCo/C catalyst for use as a cathode in polymer electrolyte fuel cells was prepared by selective chemical vapor pulse deposition (CVPD) of Pt on the surface of Co. The activity of the prepared catalyst for oxygen reduction was higher than that of a catalyst prepared by sequential impregnation (IMP) with the two metallic components. This catalytic activity difference occurs because the former catalyst has smaller Pt crystallites that produce stronger Pt-Co interactions and have a larger Pt surface area. Consequently, the CVPD catalyst has a great number of Co particles that are in close contact with the added Pt. The Pt surface was also electronically modified by interactions with Co, which were stronger in the CVPD catalyst than in the IMP catalyst, as indicated by X-ray diffraction, X-ray photoemission spectroscopy, and cyclic voltammetry measurements of the catalysts.

  20. Raman Spectroscopy of the Reaction of Thin Films of Solid-State Benzene with Vapor-Deposited Ag, Mg, and Al

    SciTech Connect (OSTI)

    Schalnat, Matthew C. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Chemistry and Biochemistry; Hawkridge, Adam M. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Chemistry and Biochemistry; Pemberton, Jeanne E. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Chemistry and Biochemistry

    2011-07-21T23:59:59.000Z

    Thin films of solid-state benzene at 30 K were reacted with small quantities of vapor-deposited Ag, Mg, and Al under ultrahigh vacuum, and products were monitored using surface Raman spectroscopy. Although Ag and Mg produce small amounts of metal–benzene adduct products, the resulting Raman spectra are dominated by surface enhancement of the normal benzene modes from metallic nanoparticles suggesting rapid Ag or Mg metallization of the film. In contrast, large quantities of Al adduct products are observed. Vibrational modes of the products in all three systems suggest adducts that are formed through a pathway initiated by an electron transfer reaction. The difference in reactivity between these metals is ascribed to differences in ionization potential of the metal atoms; ionization potential values for Ag and Mg are similar but larger than that for Al. These studies demonstrate the importance of atomic parameters, such as ionization potential, in solid-state metal–organic reaction chemistry.

  1. Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN

    SciTech Connect (OSTI)

    Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Jasiunas, A.; Meskauskaite, D.; Pavlov, J.; Tekorius, A.; Vaitkus, J. [Vilnius University, Institute of Applied Research, Vilnius LT-10222 (Lithuania); Kovalevskij, V.; Remeikis, V. [Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)

    2014-02-10T23:59:59.000Z

    In order to evaluate carrier densities created by 1.6?MeV protons and to trace radiation damage of the 2.5??m thick GaN epi-layers grown by metalorganic chemical vapor deposition technique, a correlation between the photoconductivity transients and the steady-state photoluminescence spectra have been examined. Comparison of luminescence spectra induced by proton beam and by laser pulse enabled us to evaluate the efficiency of a single proton generation being of 1?×?10{sup 7}?cm{sup ?3} per 1.6?MeV proton and 40 carrier pairs per micrometer of layer depth. This result indicates that GaN layers can be an efficient material for detection of particle flows. It has been demonstrated that GaN material can also be a rather efficient scintillating material within several wavelength ranges.

  2. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    SciTech Connect (OSTI)

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01T23:59:59.000Z

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  3. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Quarterly technical report, December 6, 1991--March 5, 1992

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-03-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization ``tools`` foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing ``fireside`` surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R&D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

  4. Epitaxial growth of BaTiO3 thin films at 600 C by metalorganic chemical vapor deposition

    E-Print Network [OSTI]

    Wang, Zhong L.

    with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry processes include deposition over large areas, high throughput, and uniform coverage of nonplanar shapes by a plasma-enhanced MOCVD pro- cess. It is not known if the added energy from the plasma generates structural

  5. Strain effects and microstructural evolution in Ge-Si system materials prepared by ion implantation and by ultrahigh vacuum chemical vapor deposition

    SciTech Connect (OSTI)

    Tu Hailing; Xiao Qinghua; Ma Tongda [General Research Institute for Non-ferrous Metals, No. 2, Xinjiekouwai Street, Beijing 100088 (China)

    2007-11-15T23:59:59.000Z

    Appropriately utilizing some microstructures may be very helpful to acquire desirable Ge-Si system materials. In this work, the Ge-Si system materials have been prepared either by ion implantation or ultrahigh vacuum chemical vapor deposition (UHVCVD). The interesting microstructures including half-loop dislocations, SiGe nanoclusters, and dislocation dipoles have been found in these two kinds of Ge-Si system materials. It is demonstrated that the evident surface strain state and adequate surface layer quality have been realized by employing these microstructures. Compared with the dipole dislocations in the Ge-Si systems deposited by UHVCVD on the compliant silicon on insulator, the half-loop dislocations and the SiGe nanoclusters induced by Ge ion implantation and subsequent annealing can relax the SiGe layer more effectively and lead to relatively large strain in the surface silicon. It may provide some new approaches to the control of misfit strains for fabricating desirable Ge-Si system materials.

  6. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    SciTech Connect (OSTI)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru [Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka [Aichi Institute of Technology, Yakusa, Toyota 470-0392 (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Yokomichi, Nagakute 480-1192 (Japan)

    2012-09-01T23:59:59.000Z

    Traps of energy levels E{sub c}-0.26 and E{sub c}-0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E{sub c}-0.13 and E{sub c}-0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E{sub c}-0.13 and E{sub c}-0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  7. Mechanistic studies of the thermal decomposition of metal carbonyls on Ni(100) surfaces in connection with chemical vapor deposition processes

    SciTech Connect (OSTI)

    Xu, M.; Zaera, F. [Department of Chemistry, University of California, Riverside, California 92521 (United States)] [Department of Chemistry, University of California, Riverside, California 92521 (United States)

    1996-03-01T23:59:59.000Z

    The thermal decomposition of Fe(CO){sub 5}, Cr(CO){sub 6}, Mo(CO){sub 6}, and W(CO){sub 6} on Ni(100) surfaces and under ultrahigh vacuum conditions was studied by using temperature programmed desorption and x-ray photoelectron spectroscopies. The initial adsorption of those metal carbonyls is mostly molecular at low temperatures, but complete decarbonylation to the naked metal takes place in all cases upon thermal activation. Experiments with coadsorbed isotopically labeled {sup 13}CO provided indirect evidence for a stepwise mechanism for Fe(CO){sub 5} which may include the formation of tetra- and tricarbonyl intermediates on the surface. For Cr(CO){sub 6}, Mo(CO){sub 6}, and W(CO){sub 6}, on the other hand, complete decomposition occurs in a narrow range of temperature, and no intermediate could be isolated on the surface. The deposition of metal films via metal carbonyl activation was studied under steady state conditions as well. Continuous deposition was seen at substrate temperatures as low as 300 K, but the grown films were found to incorporate both carbon and oxygen under most conditions tested and to change their morphology depending on the substrate temperature during deposition. {copyright} {ital 1996 American Vacuum Society}

  8. Hole-transport material variation in fully vacuum deposited perovskite solar cells

    SciTech Connect (OSTI)

    Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl, E-mail: karl.leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden (Germany)

    2014-08-01T23:59:59.000Z

    This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH{sub 3}NH{sub 3}PbI{sub x?3}Cl{sub x} perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

  9. Direct Growth Graphene on Cu Nanoparticles by Chemical Vapor Deposition as Surface-Enhanced Raman Scattering Substrate for Label-Free Detection of Adenosine

    E-Print Network [OSTI]

    Xu, Shicai; Jiang, Shouzhen; Wang, Jihua; Wei, Jie; Xu, Shida; Liu, Hanping

    2015-01-01T23:59:59.000Z

    We present a graphene/Cu nanoparticle hybrids (G/CuNPs) system as a surface-enhanced Raman scattering (SERS) substrate for adenosine detection. The Cu nanoparticles wrapped around a monolayer graphene shell were directly synthesized on flat quartz by chemical vapor deposition in a mixture of methane and hydrogen. The G/CuNPs showed an excellent SERS enhancement activity for adenosine. The minimum detected concentration of the adenosine in serum was demonstrated as low as 5 nM, and the calibration curve showed a good linear response from 5 to 500 nM. The capability of SERS detection of adenosine in real normal human urine samples based on G/CuNPs was also investigated and the characteristic peaks of adenosine were still recognizable. The reproducible and the ultrasensitive enhanced Raman signals could be due to the presence of an ultrathin graphene layer. The graphene shell was able to enrich and fix the adenosine molecules, which could also efficiently maintain chemical and optical stability of G/CuNPs. Based...

  10. Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

    SciTech Connect (OSTI)

    Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G. [Mechanical and Material Engineering Department, Universiti Kebangsaan Malaysia, Bangi 43600 (Malaysia)

    2011-01-17T23:59:59.000Z

    The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasive and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.

  11. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)] [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)] [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

    2013-05-28T23:59:59.000Z

    Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

  12. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

    SciTech Connect (OSTI)

    ALLERMAN,ANDREW A.; BANKS,JAMES C.; GEE,JAMES M.; JONES,ERIC D.; KURTZ,STEVEN R.

    1999-09-16T23:59:59.000Z

    InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.

  13. Deposition of hole-transport materials in solid-state dye-sensitized solar cells by doctor-blading

    E-Print Network [OSTI]

    McGehee, Michael

    Deposition of hole-transport materials in solid-state dye-sensitized solar cells by doctor Accepted 19 April 2010 Available online xxxx Keywords: Dye-sensitized solar cells Organic semiconductors)-9,90 -spirobifluorene) in solid-state dye-sensitized solar cells. Doctor-blading is a roll

  14. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01T23:59:59.000Z

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

  15. Reservoir compartmentalization caused by mass transport deposition Northwest Stevens pool, Elk Hills Naval Petroleum Reserves, California

    SciTech Connect (OSTI)

    Milliken, M.D.; McJannet, G.S. [Dept. of Energy, Tupman, CA (United States); Shiflett, D.W. [Intera Petroleum Technology, Inc., Bakersfield, CA (United States); Deutsch, H.A. [Bechtel Petroleum Operations, Inc., Tupman, CA (United States)] [and others

    1996-12-31T23:59:59.000Z

    The {open_quotes}A{close_quotes} sands of the Northwest Stevens Pool consist of six major subdivisions (A1-A6) and numerous sublayers. These sands are above the {open_quotes}N Point{close_quotes} stratigraphic marker, making them much younger than most other Stevens sands at Elk Hills. Cores show the A1-A3 sands to be possibly mass transport deposition, primarily debris flows, slumps, and sand injection bodies. The A4-A6 sands are characterized by normally graded sheet-like sand bodies Hospital of traditional outer fan turbidite lithofacies. Most current production from the A1-A2 interval comes from well 373A-7R, are completed waterflood wells that came on line in 1992 at 1400 BOPD. Well 373A-7R is an anomaly in the A1-A2 zone, where average production from the other ten wells is 200 BOPD. Other evidence for compartmentalization in the A1-A2 interval includes sporadic oil-water contacts and drawdown pressures, difficult log correlations, and rapid thickness changes. In 1973, well 362-7R penetrated 220 ft of wet Al sand. The well was redrilled updip and successfully completed in the A1, where the oil-water contact is more than 130 ft lower than the original hole and faulting is not apparent. In 1992, horizontal well 323H-7R unexpectedly encountered an entirely wet Al wedge zone. Reevaluation of the A1-A3 and other sands as mass transport origin is important for modeling initialization and production/development strategies.

  16. Reservoir compartmentalization caused by mass transport deposition Northwest Stevens pool, Elk Hills Naval Petroleum Reserves, California

    SciTech Connect (OSTI)

    Milliken, M.D.; McJannet, G.S. (Dept. of Energy, Tupman, CA (United States)); Shiflett, D.W. (Intera Petroleum Technology, Inc., Bakersfield, CA (United States)); Deutsch, H.A. (Bechtel Petroleum Operations, Inc., Tupman, CA (United States)) (and others)

    1996-01-01T23:59:59.000Z

    The [open quotes]A[close quotes] sands of the Northwest Stevens Pool consist of six major subdivisions (A1-A6) and numerous sublayers. These sands are above the [open quotes]N Point[close quotes] stratigraphic marker, making them much younger than most other Stevens sands at Elk Hills. Cores show the A1-A3 sands to be possibly mass transport deposition, primarily debris flows, slumps, and sand injection bodies. The A4-A6 sands are characterized by normally graded sheet-like sand bodies Hospital of traditional outer fan turbidite lithofacies. Most current production from the A1-A2 interval comes from well 373A-7R, are completed waterflood wells that came on line in 1992 at 1400 BOPD. Well 373A-7R is an anomaly in the A1-A2 zone, where average production from the other ten wells is 200 BOPD. Other evidence for compartmentalization in the A1-A2 interval includes sporadic oil-water contacts and drawdown pressures, difficult log correlations, and rapid thickness changes. In 1973, well 362-7R penetrated 220 ft of wet Al sand. The well was redrilled updip and successfully completed in the A1, where the oil-water contact is more than 130 ft lower than the original hole and faulting is not apparent. In 1992, horizontal well 323H-7R unexpectedly encountered an entirely wet Al wedge zone. Reevaluation of the A1-A3 and other sands as mass transport origin is important for modeling initialization and production/development strategies.

  17. SPIN (Version 3. 83): A Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors

    SciTech Connect (OSTI)

    Coltrin, M.E. (Sandia National Labs., Albuquerque, NM (United States)); Kee, R.J.; Evans, G.H.; Meeks, E.; Rupley, F.M.; Grcar, J.F. (Sandia National Labs., Livermore, CA (United States))

    1991-08-01T23:59:59.000Z

    In rotating-disk reactor a heated substrate spins (at typical speeds of 1000 rpm or more) in an enclosure through which the reactants flow. The rotating disk geometry has the important property that in certain operating regimes{sup 1} the species and temperature gradients normal to the disk are equal everywhere on the disk. Thus, such a configuration has great potential for highly uniform chemical vapor deposition (CVD),{sup 2--5} and indeed commercial rotating-disk CVD reactors are now available. In certain operating regimes, the equations describing the complex three-dimensional spiral fluid motion can be solved by a separation-of-variables transformation{sup 5,6} that reduces the equations to a system of ordinary differential equations. Strictly speaking, the transformation is only valid for an unconfined infinite-radius disk and buoyancy-free flow. Furthermore, only some boundary conditions are consistent with the transformation (e.g., temperature, gas-phase composition, and approach velocity all specified to be independent of radius at some distances above the disk). Fortunately, however, the transformed equations will provide a very good practical approximation to the flow in a finite-radius reactor over a large fraction of the disk (up to {approximately}90% of the disk radius) when the reactor operating parameters are properly chosen, i.e, high rotation rates. In the limit of zero rotation rate, the rotating disk flow reduces to a stagnation-point flow, for which a similar separation-of-variables transformation is also available. Such flow configurations ( pedestal reactors'') also find use in CVD reactors. In this report we describe a model formulation and mathematical analysis of rotating-disk and stagnation-point CVD reactors. Then we apply the analysis to a compute code called SPIN and describe its implementation and use. 31 refs., 4 figs.

  18. Effect of NH{sub 3} on the low pressure chemical vapor deposition of TiO{sub 2} film at low temperature using tetrakis(diethylamino)titanium and oxygen

    SciTech Connect (OSTI)

    Song Xuemei; Takoudis, Christos G. [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2007-03-15T23:59:59.000Z

    The effect of NH{sub 3} on TiO{sub 2} film deposition using tetrakis(diethylamino)titanium (TDEAT) and O{sub 2} as source gases in a low pressure chemical vapor deposition reactor was studied at low temperatures ranging from 100 to 250 deg. C. TiO{sub 2} film is traditionally deposited at temperature above 300 deg. C using oxygen-based Ti precursors, such as titanium tetraisopropoxide. In this study, the authors demonstrate that a combination of both reactive precursors, i.e., TDEAT and NH{sub 3}, is an effective technique for TiO{sub 2} film deposition at lower temperatures, albeit with some nitrogen incorporation. It was found that films can be formed at temperatures as low as 100 deg. C when NH{sub 3} is used. At higher temperatures, the growth rate of TiO{sub 2} films deposited using NH{sub 3} is higher than that of films deposited without NH{sub 3} by up to one order of magnitude. X-ray photoelectron spectroscopy data show that NH{sub 3} enhances the formation of TiNO and TiN, and x-ray diffraction analysis shows that all as-deposited films have amorphous structure. Both x-ray photoelectron spectroscopy and secondary ion mass spectroscopy depth profiles show that nitrogen, carbon, and oxygen are uniformly distributed throughout the film. The mechanism of enhancement of growth rate using NH{sub 3} is also discussed.

  19. Ion beam assisted deposition of thermal barrier coatings

    DOE Patents [OSTI]

    Youchison, Dennis L. (Albuquerque, NM); McDonald, Jimmie M. (Albuquerque, NM); Lutz, Thomas J. (Albuquerque, NM); Gallis, Michail A. (Albuquerque, NM)

    2010-11-23T23:59:59.000Z

    Methods and apparatus for depositing thermal barrier coatings on gas turbine blades and vanes using Electron Beam Physical Vapor Deposition (EBPVD) combined with Ion Beam Assisted Deposition (IBAD).

  20. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1994-01-01T23:59:59.000Z

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  1. TRANSPORT OF HEAT, WATER VAPOR AND CARBON DOXIDE BY LONG PERIOD EDDIES IN THE STABLE BOUNDARY LAYER

    SciTech Connect (OSTI)

    Kurzeja, R.

    2010-07-26T23:59:59.000Z

    The vertical transport of heat and trace chemicals for a night in April has been studied with a wavelet analysis and conventional one-hour averages. It was found that for the night of April 20, 2009, turbulent kinetic energy, heat and trace chemicals were transported directed downward from the jet core. The most significant periods for this transport were less than 5 minutes and greater than one hour with intermittent transport taking place in the 5 min to 1 hour time frame. The nocturnal boundary layer is characterized by turbulent intermittency, long period oscillations, and a slow approach to equilibrium, (Mahrt, 1999). Although turbulence is usually maintained by surface friction, downward transport from low-level jets can also play an important role in turbulence maintenance and in the transport of scalars, Mahrt (1999), Banta et al. (2006). The eddy covariance flux measurement technique assumes continuous turbulence which is unusual in the stable boundary because significant flux transport occurs via turbulent eddies whose periods are long compared with the averaging time (Goulden et al., 1996). Systematic error in eddy flux measurements is attributed mainly to the neglect of long period eddies. Banta et al. (2006) noted that observations of turbulence below the low level jet suggested that while upward transport of turbulence kinetic energy (TKE) is common, downward transport from the jet can also occur. They found that in the CASES 99 experiments that turbulence scaled well with the strength of the low-level jet, and that surface cooling was more important than surface roughness. Because nocturnal turbulence is intermittent and non-stationary, the appropriate averaging time for calculation of TKE and EC fluxes is not obvious. Wavelet analysis is, thus, a more suitable analysis tool than conventional Fourier analysis.

  2. Vaporization of zinc from scrap

    SciTech Connect (OSTI)

    Ozturk, B.; Fruehan, R.J. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

    1996-12-31T23:59:59.000Z

    The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

  3. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    SciTech Connect (OSTI)

    Eric M. Suuberg; Vahur Oja

    1997-07-01T23:59:59.000Z

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  4. Double-sided reel-to-reel metal-organic chemical vapor deposition system of YBa{sub 2}Cu{sub 3}O{sub 7-?} thin films

    SciTech Connect (OSTI)

    Zhang, Fei; Xiong, Jie, E-mail: jiexiong@uestc.edu.cn; Liu, Xin; Zhao, Ruipeng; Zhao, Xiaohui; Tao, Bowan; Li, Yanrong [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2014-07-01T23:59:59.000Z

    Two-micrometer thick YBa{sub 2}Cu{sub 3}O{sub 7-?} (YBCO) films have been successfully deposited on both sides of LaAlO{sub 3} single crystalline substrates by using a home-made reel-to-reel metal-organic chemical vapor deposition (MOCVD) system, which has two opposite symmetrical shower heads and a special-designed heater. This technique can simultaneously fabricate double-sided films with high deposition rate up to 500?nm/min, and lead to doubling current carrying capability of YBCO, especially for coated conductors (CCs). X-ray diffraction analysis showed that YBCO films were well crystallized and highly epitaxial with the full width at half maximum values of 0.2°???0.3° for the rocking curves of (005) YBCO and 1.0° for ?-scans of (103) YBCO. Scanning electron microscope revealed dense, crack-free, slightly rough surface with Ba-Cu-O precipitates. The films showed critical current density (J{sub c}, 77?K, 0?T) of about 1 MA/cm{sup 2}, and overall critical current of 400?A/cm, ascribed to the double-sided structure. Our results also demonstrated that the temperature and composition in the deposition zone were uniform, which made MOCVD preparation of low cost and high performance double-sided YBCO CCs more promising for industrialization.

  5. Transport and deposition of particles in gas turbines: Effects of convection, diffusion, thermophoresis, inertial impaction and coagulation

    SciTech Connect (OSTI)

    Brown, D.P.; Biswas, P.; Rubin, S.G. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    Aerosols are produced in a large number of industrial processes over a wide range of sizes. Of particular importance is deposition of coal and oil combustion aerosols in turbines. A model coupling the transport and the dynamics of aerosols to flow characteristics in gas turbines is presented. An order of magnitude analysis is carried out based on typical operational conditions for coal and oil combustion (neglecting coagulation) to determine the relative importance of various mechanisms on particle behavior. A scheme is then developed to incorporate a moment model of a log normally distributed aerosol to predict aerosol transport and dynamics in turbine flows. The proposed moment model reflects the contributions from convection, inertia, diffusion and thermophoresis. Aerosol behavior in various laminar 2-D and axisymmetric flows is considered in this study. Results are compared to published work in 1-D and 2-D planar and axisymmetric.

  6. In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system

    E-Print Network [OSTI]

    Cheng, Cheng-Wei, Ph.D. Massachusetts Institute of Technology

    2010-01-01T23:59:59.000Z

    In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods ...

  7. Uranium-series constraints on radionuclide transport and groundwater flow at the Nopal I uranium deposit, Sierra Pena Blanca, Mexico

    SciTech Connect (OSTI)

    Goldstein, S.J.; Abdel-Fattah, A.I.; Murrell, M.T.; Dobson, P.F.; Norman, D.E.; Amato, R.S.; Nunn, A. J.

    2009-10-01T23:59:59.000Z

    Uranium-series data for groundwater samples from the Nopal I uranium ore deposit were obtained to place constraints on radionuclide transport and hydrologic processes for a nuclear waste repository located in fractured, unsaturated volcanic tuff. Decreasing uranium concentrations for wells drilled in 2003 are consistent with a simple physical mixing model that indicates that groundwater velocities are low ({approx}10 m/y). Uranium isotopic constraints, well productivities, and radon systematics also suggest limited groundwater mixing and slow flow in the saturated zone. Uranium isotopic systematics for seepage water collected in the mine adit show a spatial dependence which is consistent with longer water-rock interaction times and higher uranium dissolution inputs at the front adit where the deposit is located. Uranium-series disequilibria measurements for mostly unsaturated zone samples indicate that {sup 230}Th/{sup 238}U activity ratios range from 0.005-0.48 and {sup 226}Ra/{sup 238}U activity ratios range from 0.006-113. {sup 239}Pu/{sup 238}U mass ratios for the saturated zone are <2 x 10{sup -14}, and Pu mobility in the saturated zone is >1000 times lower than the U mobility. Saturated zone mobility decreases in the order {sup 238}U{approx}{sup 226}Ra > {sup 230}Th{approx}{sup 239}Pu. Radium and thorium appear to have higher mobility in the unsaturated zone based on U-series data from fractures and seepage water near the deposit.

  8. Effect of site of semen deposition on spermatozoal transport in mares susceptible or resistant to endometritis

    E-Print Network [OSTI]

    Derczo, Sonya Kaye

    2000-01-01T23:59:59.000Z

    contamination or insemination. Uterine muscle contraction is also believed to aid in the transport of spermatozoa from the site of insemination to the oviduct. It is possible that the muscle dysfunction in mares with delayed uterine clearance may hinder...

  9. Method and apparatus for maintaining condensable constituents of a gas in a vapor phase during sample transport

    DOE Patents [OSTI]

    Felix, Larry Gordon; Farthing, William Earl; Irvin, James Hodges; Snyder, Todd Robert

    2010-05-18T23:59:59.000Z

    A system for fluid transport at elevated temperatures having a conduit having a fluid inlet end and a fluid outlet end and at least one heating element disposed within the conduit providing direct heating of a fluid flowing through the conduit. The system is particularly suited for preventing condensable constituents of a high temperature fluid from condensing out of the fluid prior to analysis of the fluid. In addition, operation of the system so as to prevent the condensable constituents from condensing out of the fluid surprisingly does not alter the composition of the fluid.

  10. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Eighth quarterly technical progress report, June 6, 1992--September 5, 1992

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-09-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization `tools` for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical `program` based on the notion of ``self-regulation`` set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical `many-body` computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,{hor_ellipsis}) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend `sticking` and `erosion` laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

  11. assisted chemical vapor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline...

  12. Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ishikawa, M.; Ohba, Y.; Sugawara, H.; Yamamoto, M.; Nakanisi, T.

    1986-01-20T23:59:59.000Z

    Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

  13. Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May, E-mail: eekmlau@ust.hk [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-09-08T23:59:59.000Z

    We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12?}cm{sup ?2}eV{sup ?1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.

  14. Chemical vapor infiltration using microwave energy

    DOE Patents [OSTI]

    Devlin, David J. (Los Alamos, NM); Currier, Robert P. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Barbero, Robert S. (Santa Cruz, NM)

    1993-01-01T23:59:59.000Z

    A method for producing reinforced ceramic composite articles by means of chemical vapor infiltration and deposition in which an inverted temperature gradient is utilized. Microwave energy is the source of heat for the process.

  15. Photoinitiated chemical vapor depostion [sic] : mechanism and applications

    E-Print Network [OSTI]

    Baxamusa, Salmaan Husain

    2009-01-01T23:59:59.000Z

    Photoinitiated chemical vapor deposition (piCVD) is developed as a simple, solventless, and rapid method for the deposition of swellable hydrogels and functional hydrogel copolymers. Mechanistic experiments show that piCVD ...

  16. Measurement and modeling of Ar/H2/CH4 arc jet discharge chemical vapor deposition reactors II: Modeling of the spatial dependence of expanded

    E-Print Network [OSTI]

    Bristol, University of

    and used to deposit thin films of polycrystalline diamond. This reactor has been the subject of many prior of micro- and nanocrystalline diamond and diamondlike carbon films. The model incorporates gas activation-containing radical species incident on the growing diamond surface C atoms and CH radicals within this reactor

  17. Organic-vapor-liquid-solid deposition with an impinging gas jet Daniel W. Shaw, Kevin Bufkin, Alexandr A. Baronov, Brad L. Johnson, and David L. Patrick

    E-Print Network [OSTI]

    Patrick, David L.

    -sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications J-assisted processing AIP Advances 2, 032171 (2012) Degradation and passivation of CuInSe2 Appl. Phys. Lett. 101, 112108 been used in transistors, light emitting diodes, and photovoltaics;2 as chemical sensors;3

  18. The influence of ammonia on rapid-ther al low-pressure metalorganic chemical vapor deposited TIN, films from tetrakis (dimethylamido) titanium

    E-Print Network [OSTI]

    Florida, University of

    , films from tetrakis (dimethylamido) titanium precursor onto InP A. Katz, A. Feingold, S. Nakahara, and SP, using a combined reactive chemistry of ammonia (NH,) gas and tetrakis (dimethylamido) titanium (DMATi to the preview RT-LPMOCVD TN, film deposited using only the DMATi precursor. I. INTRODUCTION Titanium nitride

  19. Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced Materials Processing, North Carolina State University, Raleigh, North Carolina 27695 Received 11 July 1996 silicon deposition. The ability of mass spectrometry to observe process faults in real time is also

  20. Numerical modeling of mixed sediment resuspension, transport, and deposition during the March 1998 episodic events in southern Lake Michigan.

    SciTech Connect (OSTI)

    Lee, C.; Schwab, D. J.; Beletsky, D.; Stroud, J.; Lesht, B.; PNNL; NOAA; Univ. of Michigan; Univ. of Pennsylvania

    2007-02-17T23:59:59.000Z

    A two-dimensional sediment transport model capable of simulating sediment resuspension of mixed (cohesive plus noncohesive) sediment is developed and applied to quantitatively simulate the March 1998 resuspension events in southern Lake Michigan. Some characteristics of the model are the capability to incorporate several floc size classes, a physically based settling velocity formula, bed armoring, and sediment availability limitation. Important resuspension parameters were estimated from field and laboratory measurement data. The model reproduced the resuspension plume (observed by the SeaWIFS satellite and field instruments) and recently measured sedimentation rate distribution (using radiotracer techniques) fairly well. Model results were verified with field measurements of suspended sediment concentration and settling flux (by ADCPs and sediment traps). Both wave conditions and sediment bed properties (critical shear stress, fine sediment fraction, and limited sediment availability or source) are the critical factors that determine the concentration distribution and width of the resuspension plume. The modeled sedimentation pattern shows preferential accumulation of sediment on the eastern side of the lake, which agrees with the observed sedimentation pattern despite a predominance of particle sources from the western shoreline. The main physical mechanisms determining the sedimentation pattern are (1) the two counter-rotating circulation gyres producing offshore mass transport along the southeastern coast during northerly wind and (2) the settling velocity of sediment flocs which controls the deposition location.

  1. Numerical modeling of mixed sediment resuspension, transport, and deposition during the March 1998 episodic events in southern Lake Michigan

    SciTech Connect (OSTI)

    Lee, Cheegwan; Schwab, David J.; Beletsky, Dmitry; Stroud, Jonathan; Lesht, B. M.

    2007-02-17T23:59:59.000Z

    A two-dimensional sediment transport model capable of simulating sediment resuspension of mixed (cohesive+noncohesive) sediment is developed and applied to quantitatively simulate the March 1998 resuspension events in southern Lake Michigan. Some characteristics of the model are the capability to incorporate several floc size classes, a physically-based settling velocity formula, bed armoring, and sediment availability limitation. Important resuspension parameters were estimated from field and laboratory measurement data. The model reproduced the resuspension plume (observed by the SeaWIFS satellite and field instruments) and recently measured sedimentation rate distribution (using radiotracer techniques) fairly well. Model results were verified with field measurements of suspended sediment concentration and settling flux (by ADCPs and sediment traps). Both wave conditions and sediment bed properties (critical shear stress, fine sediment fraction, and limited sediment availability or source) are the critical factors that determine the concentration distribution and width of the resuspension plume. The modeled sedimentation pattern shows preferential accumulation of sediment on the eastern side of the lake, which agrees with the observed sedimentation pattern despite a predominance of particle sources from the western shoreline. The main physical mechanisms determining the sedimentation pattern are 1) the two counter-rotating circulation gyres producing offshore mass transport along the southeastern coast during northerly wind and 2) the settling velocity of sediment flocs which controls the deposition location.

  2. Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Nabben, Reinhard

    Effect of reactor pressure on the electrical and structural properties of InN epilayers grown://avspublications.org/jvsta/about/rights_and_permissions #12;Effect of reactor pressure on the electrical and structural properties of InN epilayers grown-atmospheric reactor pressures (2.5­18.5 bar) on the electrical and structural properties of InN epilayers deposited

  3. Reduced Order Model Compensator Control of Species Transport in a CVD Reactor

    E-Print Network [OSTI]

    Reduced Order Model Compensator Control of Species Transport in a CVD Reactor G.M. Kepler, H for computation of feedback controls and compensators in a high pressure chemical vapor deposition (HPCVD) reactor University to design and build such a HPCVD reactor with real­time sensing and control as an innovative

  4. Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Home Agenda Awards Exhibitors Lodging Posters Registration Transportation Workshops Contact Us User Meeting Archives Users' Executive Committee Getting to Berkeley...

  5. Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Print Home Agenda Awards Exhibitors Lodging Posters Registration Transportation Workshops Contact Us User Meeting Archives Users' Executive Committee Getting to...

  6. {open_quotes}Local texture, current flow, and superconductive transport properties of Tl1223 deposits on practical substrates{close_quotes}

    SciTech Connect (OSTI)

    Christen, D.K.; Specht, E.D.; Goyal, A. [and others

    1996-05-01T23:59:59.000Z

    Quantitative investigations of the crystal grain orientations and electrical transport properties of high temperature superconducting (HTS)TiBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+x} (Tl1223) deposits on polycrystalline substrates show that current flow comprises percolative networks of strongly-coupled material. Superconductive transport properties on different samples, on the same samples at different widths, and on samples with artificially-induced strong flux pinning defects confirm the nature of current flow, and suggest that these materials may be useful as a new class of HTS conductors.

  7. Predicting tropospheric ozone and hydroxyl radical in a global, three-dimensional, chemistry, transport, and deposition model

    SciTech Connect (OSTI)

    Atherton, C.S.

    1995-01-05T23:59:59.000Z

    Two of the most important chemically reactive tropospheric gases are ozone (O{sub 3}) and the hydroxyl radical (OH). Although ozone in the stratosphere is a necessary protector against the sun`s radiation, tropospheric ozone is actually a pollutant which damages materials and vegetation, acts as a respiratory irritant, and is a greenhouse gas. One of the two main sources of ozone in the troposphere is photochemical production. The photochemistry is initiated when hydrocarbons and carbon monoxide (CO) react with nitrogen oxides (NO{sub x} = NO + NO{sub 2}) in the presence of sunlight. Reaction with the hydroxyl radical, OH, is the main sink for many tropospheric gases. The hydroxyl radical is highly reactive and has a lifetime on the order of seconds. Its formation is initiated by the photolysis of tropospheric ozone. Tropospheric chemistry involves a complex, non-linear set of chemical reactions between atmospheric species that vary substantially in time and space. To model these and other species on a global scale requires the use of a global, three-dimensional chemistry, transport, and deposition (CTD) model. In this work, I developed two such three dimensional CTD models. The first model incorporated the chemistry necessary to model tropospheric ozone production from the reactions of nitrogen oxides with carbon monoxide (CO) and methane (CH{sub 4}). The second also included longer-lived alkane species and the biogenic hydrocarbon isoprene, which is emitted by growing plants and trees. The models` ability to predict a number of key variables (including the concentration of O{sub 3}, OH, and other species) were evaluated. Then, several scenarios were simulated to understand the change in the chemistry of the troposphere since preindustrial times and the role of anthropogenic NO{sub x} on present day conditions.

  8. Harvard University Atomic Layer Deposition (ALD): An Enabler

    E-Print Network [OSTI]

    Deposition (CVD) One or more gases or vapors react to form a solid product Reaction started by heat mixing 2 vapors plasma Solid product can be a film particle nanowire nanotube precursor vapors byproduct vapors University Coatings on the Outside of Particles ALD AlN coating ZnS particles Used in electroluminescent back

  9. Iodine transport analysis in the ESBWR.

    SciTech Connect (OSTI)

    Kalinich, Donald A.; Gauntt, Randall O.; Young, Michael Francis; Longmire, Pamela

    2009-03-01T23:59:59.000Z

    A simplified ESBWR MELCOR model was developed to track the transport of iodine released from damaged reactor fuel in a hypothesized core damage accident. To account for the effects of iodine pool chemistry, radiolysis of air and cable insulation, and surface coatings (i.e., paint) the iodine pool model in MELCOR was activated. Modifications were made to MELCOR to add sodium pentaborate as a buffer in the iodine pool chemistry model. An issue of specific interest was whether iodine vapor removed from the drywell vapor space by the PCCS heat exchangers would be sequestered in water pools or if it would be rereleased as vapor back into the drywell. As iodine vapor is not included in the deposition models for diffusiophoresis or thermophoresis in current version of MELCOR, a parametric study was conducted to evaluate the impact of a range of iodine removal coefficients in the PCCS heat exchangers. The study found that higher removal coefficients resulted in a lower mass of iodine vapor in the drywell vapor space.

  10. Transportation

    E-Print Network [OSTI]

    Vinson, Steve

    2013-01-01T23:59:59.000Z

    Transportation in ancient Egypt entailed the use of boats2007 Land transport in Roman Egypt: A study of economics andDieter 1991 Building in Egypt: Pharaonic stone masonry. New

  11. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect (OSTI)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01T23:59:59.000Z

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  12. Vapor spill pipe monitor

    DOE Patents [OSTI]

    Bianchini, G.M.; McRae, T.G.

    1983-06-23T23:59:59.000Z

    The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

  13. Metalorganic Chemical Vapor Deposition for Optoelectronic Devices

    E-Print Network [OSTI]

    Coleman, James J.

    ­1100 nm, visible InGaP and related compounds, and the column III nitrides for blue and ultraviolet la

  14. Quantum cascade laser investigations of CH{sub 4} and C{sub 2}H{sub 2} interconversion in hydrocarbon/H{sub 2} gas mixtures during microwave plasma enhanced chemical vapor deposition of diamond

    SciTech Connect (OSTI)

    Ma Jie; Cheesman, Andrew; Ashfold, Michael N. R. [School of Chemistry, University of Bristol, Bristol BS8 1TS (United Kingdom); Hay, Kenneth G.; Wright, Stephen; Langford, Nigel; Duxbury, Geoffrey [Department of Physics, University of Strathclyde, John Anderson Building, 107 Rottenrow, Glasgow G4 0NG (United Kingdom); Mankelevich, Yuri A. [Skobel'tsyn Institute of Nuclear Physics, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2009-08-01T23:59:59.000Z

    CH{sub 4} and C{sub 2}H{sub 2} molecules (and their interconversion) in hydrocarbon/rare gas/H{sub 2} gas mixtures in a microwave reactor used for plasma enhanced diamond chemical vapor deposition (CVD) have been investigated by line-of-sight infrared absorption spectroscopy in the wavenumber range of 1276.5-1273.1 cm{sup -1} using a quantum cascade laser spectrometer. Parameters explored include process conditions [pressure, input power, source hydrocarbon, rare gas (Ar or Ne), input gas mixing ratio], height (z) above the substrate, and time (t) after addition of hydrocarbon to a pre-existing Ar/H{sub 2} plasma. The line integrated absorptions so obtained have been converted to species number densities by reference to the companion two-dimensional (r,z) modeling of the CVD reactor described in Mankelevich et al. [J. Appl. Phys. 104, 113304 (2008)]. The gas temperature distribution within the reactor ensures that the measured absorptions are dominated by CH{sub 4} and C{sub 2}H{sub 2} molecules in the cool periphery of the reactor. Nonetheless, the measurements prove to be of enormous value in testing, tensioning, and confirming the model predictions. Under standard process conditions, the study confirms that all hydrocarbon source gases investigated (methane, acetylene, ethane, propyne, propane, and butane) are converted into a mixture dominated by CH{sub 4} and C{sub 2}H{sub 2}. The interconversion between these two species is highly dependent on the local gas temperature and the H atom number density, and thus on position within the reactor. CH{sub 4}->C{sub 2}H{sub 2} conversion occurs most efficiently in an annular shell around the central plasma (characterized by 1400CH{sub 4} is favored in the more distant regions where T{sub gas}<1400 K. Analysis of the multistep interconversion mechanism reveals substantial net consumption of H atoms accompanying the CH{sub 4}->C{sub 2}H{sub 2} conversion, whereas the reverse C{sub 2}H{sub 2}->CH{sub 4} process only requires H atoms to drive the reactions; H atoms are not consumed by the overall conversion.

  15. atmospheric dry deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    water vapor, and we confirm such predictions in a numerical model. There have been a number 38 Dual nitrate isotopes in dry deposition: Utility for partitioning NOx source...

  16. Analysis of the energy transport and deposition within the reaction chamber of the prometheus inertial fusion energy reactor

    SciTech Connect (OSTI)

    Eggleston, J.E.; Abdou, M.A.; Tillack, M.S. [Univ. of California, Los Angeles, CA (United States)

    1994-12-31T23:59:59.000Z

    One of the parameters affecting the feasibility of Inertial Fusion Energy (IFE) devices is the number of shots per unit time, i.e. the repetition rate. The repetition rate limits the achievable power that can be obtained from the reactor. To obtain an estimate of the allowable time between shots, a code named RECON was developed to model the response of the reaction chamber to the pellet explosion. This paper discusses how the code treats the thermodynamic response of the cavity gas and models the condensation/evaporation of this vapor to and from the first wall. A large amount of energy from the pellet microexplosion is carried by the pellet debris and the x-rays generated in the fusion reaction. Models of x-ray attenuation and ion slowing down are used to estimate the fraction of the pellet energy that is absorbed in the vapor. A large amount of energy is absorbed into the cavity gas, which causes it to become partially ionized. The ionization complicates the calculation of the temperature, pressure, and the radiative heat transfer from the gas to the first wall. To treat this problem, methods developed by Zel`dovich and Raizer are used in modeling the internal energy and the radiative heat flux. RECON was developed to run with a relatively short computational time, yet accurate enough for conceptual reactor design calculations.

  17. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18T23:59:59.000Z

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  18. MSIV leakage airborne iodine transport

    SciTech Connect (OSTI)

    Cline, J.E. (Cline Associates Inc., Rockville, MD (United States))

    1993-01-01T23:59:59.000Z

    Gaseous iodine deposits on surfaces exposed to vapors. Basic chemical and physical principles predict this behavior, and several laboratory and in-plant measurements demonstrate the characteristic. An empirical model was developed that describes the deposition, resuspension, and transformation of airborne radioiodine molecular species as a stream containing these forms moves along its pathway. The model uses a data base of measured values of deposition and resuspension rates in its application and describes the conversion of the more reactive inorganic iodine species I[sub 2] to the less reactive organic species CH[sub 3]I as the iodine deposits and resuspends along the path. It also considers radioactive decay and chemical surface bonding during residence on surfaces. For the 8-day [sup 131]I, decay during the airborne portion of the transport is negligible. Verification of the model included measurement tests of long gaseous-activity sampling lines of different diameters, operated at different flow rates and stream temperatures. The model was applied to the streams at a boiling water reactor nuclear power plant to describe the transport through leaking main steam isolation valves (MSIVs), following a loss-of-coolant accident.

  19. Stacked vapor fed amtec modules

    DOE Patents [OSTI]

    Sievers, Robert K. (North Huntingdon, PA)

    1989-01-01T23:59:59.000Z

    The present invention pertains to a stacked AMTEC module. The invention includes a tubular member which has an interior. The member is comprised of a ion conductor that substantially conducts ions relative to electrons, preferably a beta"-alumina solid electrolyte, positioned about the interior. A porous electrode for conducting electrons and allowing sodium ions to pass therethrough, and wherein electrons and sodium ions recombine to form sodium is positioned about the beta"-alumina solid electrolyte. The electrode is operated at a temperature and a pressure that allows the recombined sodium to vaporize. Additionally, an outer current collector grid for distributing electrons throughout the porous electrode is positioned about and contacts the porous electrode. Also included in the invention is transporting means for transporting liquid sodium to the beta"-alumina solid electrolyte of the tubular member. A transition piece is positioned about the interior of the member and contacts the transporting means. The transition piece divides the member into a first cell and a second cell such that each first and second cell has a beta"-alumina solid electrolyte, a first and second porous electrode and a grid. The transition piece conducts electrons from the interior of the tubular member. There is supply means for supplying sodium to the transporting means. Preferably the supply means is a shell which surrounds the tubular member and is operated at a temperature such that the vaporized sodium condenses thereon. Returning means for returning the condensed sodium from the shell to the transporting means provides a continuous supply of liquid sodium to the transporting means. Also, there are first conducting means for conducting electric current from the transition piece which extends through the shell, and second conducting means for conducting electric current to the grid of the first cell which extends through the shell.

  20. Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor Deposition: TiClm(NH2)n, TiClm(NH2)nNH, and TiClm(NH2)nN. An ab Initio

    E-Print Network [OSTI]

    Schlegel, H. Bernhard

    Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor with these basis sets augmented by multiple sets of polarization and diffuse functions using the B3LYP optimized geometries. Bond dissociation energies, heats of atomization, heats of formation, and entropies have been

  1. Vapor spill monitoring method

    DOE Patents [OSTI]

    Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

    1985-01-01T23:59:59.000Z

    Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

  2. EVALUATION OF THE EMISSION, TRANSPORT, AND DEPOSITION OF MERCURY, FINE PARTICULATE MATTER, AND ARSENIC FROM COAL-BASED POWER PLANTS IN THE OHIO RIVER VALLEY REGION

    SciTech Connect (OSTI)

    Kevin Crist

    2005-04-02T23:59:59.000Z

    Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NO{sub x}, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg{sup 0} and RGM. Approximately of 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg{sup 0}, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by U.S. EPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  3. EVALUATION OF THE EMISSION, TRANSPORT, AND DEPOSITION OF MERCURY, FINE PARTICULATE MATTER, AND ARSENIC FROM COAL-BASED POWER PLANTS IN THE OHIO RIVER VALLEY REGION

    SciTech Connect (OSTI)

    Kevin Crist

    2004-10-02T23:59:59.000Z

    Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NOx, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg{sup 0} and RGM. Approximately of 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg{sup 0}, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by U.S. EPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  4. EVALUATION OF THE EMISSION, TRANSPORT, AND DEPOSITION OF MERCURY, FINE PARTICULATE MATTER, AND ARSENIC FROM COAL-BASED POWER PLANTS IN THE OHIO RIVER VALLEY REGION

    SciTech Connect (OSTI)

    Kevin Crist

    2004-04-02T23:59:59.000Z

    Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc. (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NOx, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg{sup 0} and RGM. Approximately 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal-fired power plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg{sup 0}, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley Region, operated independently of this project. These sites may include (1) the DOE National Energy Technology Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by U.S. EPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  5. EVALUATION OF THE EMISSION, TRANSPORT, AND DEPOSITION OF MERCURY, FINE PARTICULATE MATTER, AND ARSENIC FROM COAL-BASED POWER PLANTS IN THE OHIO RIVER VALLEY REGION

    SciTech Connect (OSTI)

    Kevin Crist

    2003-10-02T23:59:59.000Z

    Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NO{sub x}, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg{sup 0} and RGM. Approximately of 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg{sup 0}, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley Region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by U.S. EPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley Region.

  6. Evaluation of the Emission, Transport, and Deposition of Mercury, Fine Particulate Matter, and Arsenic from Coal-Based Power Plants in the Ohio River Valley Region

    SciTech Connect (OSTI)

    Kevin Crist

    2006-04-02T23:59:59.000Z

    As stated in the proposal: Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NO{sub x}, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg0 and RGM. Approximately 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg{sup 0}, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by the USEPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  7. Evaluation of the Emission, Transport, and Deposition of Mercury, Fine Particulate Matter, and Arsenic from Coal-Based Power Plants in the Ohio River Valley Region

    SciTech Connect (OSTI)

    Kevin Crist

    2005-10-02T23:59:59.000Z

    Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, is evaluating the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury, arsenic, and associated fine particulate matter. This evaluation will involve two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring will include the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station will contain sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), arsenic, particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NOx, SO{sub 2}, O{sub 3}, etc.). Laboratory analysis of time-integrated samples will be used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Near-real-time measurements will be used to measure the ambient concentrations of PM mass and all gaseous species including Hg{sup 0} and RGM. Approximately of 18 months of field data will be collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data will also provide mercury, arsenic, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis will include (1) development of updated inventories of mercury and arsenic emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg0, RGM, arsenic, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This will be accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results will also be compared to field data collected at other air monitoring sites in the Ohio Valley region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory's monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by U.S. EPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions will provide critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  8. Evaluation of the Emission, Transport, and Deposition of Mercury and Fine Particulate Matter from Coal-Based Power Plants in the Ohio River Valley Region

    SciTech Connect (OSTI)

    Kevin Crist

    2008-12-31T23:59:59.000Z

    As stated in the proposal: Ohio University, in collaboration with CONSOL Energy, Advanced Technology Systems, Inc (ATS) and Atmospheric and Environmental Research, Inc. (AER) as subcontractors, evaluated the impact of emissions from coal-fired power plants in the Ohio River Valley region as they relate to the transport and deposition of mercury and associated fine particulate matter. This evaluation involved two interrelated areas of effort: ambient air monitoring and regional-scale modeling analysis. The scope of work for the ambient air monitoring included the deployment of a surface air monitoring (SAM) station in southeastern Ohio. The SAM station contains sampling equipment to collect and measure mercury (including speciated forms of mercury and wet and dry deposited mercury), particulate matter (PM) mass, PM composition, and gaseous criteria pollutants (CO, NOx, SO2, O3, etc.). Laboratory analyses of time-integrated samples were used to obtain chemical speciation of ambient PM composition and mercury in precipitation. Nearreal- time measurements were used to measure the ambient concentrations of PM mass and all gaseous species including Hg0 and RGM. Approximately 30 months of field data were collected at the SAM site to validate the proposed regional model simulations for episodic and seasonal model runs. The ambient air quality data provides mercury, and fine particulate matter data that can be used by Ohio Valley industries to assess performance on multi-pollutant control systems. The scope of work for the modeling analysis includes (1) development of updated inventories of mercury emissions from coal plants and other important sources in the modeled domain; (2) adapting an existing 3-D atmospheric chemical transport model to incorporate recent advancements in the understanding of mercury transformations in the atmosphere; (3) analyses of the flux of Hg0, RGM, and fine particulate matter in the different sectors of the study region to identify key transport mechanisms; (4) comparison of cross correlations between species from the model results to observations in order to evaluate characteristics of specific air masses associated with long-range transport from a specified source region; and (5) evaluation of the sensitivity of these correlations to emissions from regions along the transport path. This is accomplished by multiple model runs with emissions simulations switched on and off from the various source regions. To the greatest extent possible, model results were compared to field data collected at other air monitoring sites in the Ohio Valley region, operated independently of this project. These sites may include (1) the DOE National Energy Technologies Laboratory’s monitoring site at its suburban Pittsburgh, PA facility; (2) sites in Pittsburgh (Lawrenceville) PA and Holbrook, PA operated by ATS; (3) sites in Steubenville, OH and Pittsburgh, PA operated by the USEPA and/or its contractors; and (4) sites operated by State or local air regulatory agencies. Field verification of model results and predictions provides critical information for the development of cost effective air pollution control strategies by the coal-fired power plants in the Ohio River Valley region.

  9. Adsorption of water vapor on reservoir rocks

    SciTech Connect (OSTI)

    Not Available

    1993-07-01T23:59:59.000Z

    Progress is reported on: adsorption of water vapor on reservoir rocks; theoretical investigation of adsorption; estimation of adsorption parameters from transient experiments; transient adsorption experiment -- salinity and noncondensible gas effects; the physics of injection of water into, transport and storage of fluids within, and production of vapor from geothermal reservoirs; injection optimization at the Geysers Geothermal Field; a model to test multiwell data interpretation for heterogeneous reservoirs; earth tide effects on downhole pressure measurements; and a finite-difference model for free surface gravity drainage well test analysis.

  10. Vapor scavenging by atmospheric aerosol particles

    SciTech Connect (OSTI)

    Andrews, E.

    1996-05-01T23:59:59.000Z

    Particle growth due to vapor scavenging was studied using both experimental and computational techniques. Vapor scavenging by particles is an important physical process in the atmosphere because it can result in changes to particle properties (e.g., size, shape, composition, and activity) and, thus, influence atmospheric phenomena in which particles play a role, such as cloud formation and long range transport. The influence of organic vapor on the evolution of a particle mass size distribution was investigated using a modified version of MAEROS (a multicomponent aerosol dynamics code). The modeling study attempted to identify the sources of organic aerosol observed by Novakov and Penner (1993) in a field study in Puerto Rico. Experimentally, vapor scavenging and particle growth were investigated using two techniques. The influence of the presence of organic vapor on the particle`s hydroscopicity was investigated using an electrodynamic balance. The charge on a particle was investigated theoretically and experimentally. A prototype apparatus--the refractive index thermal diffusion chamber (RITDC)--was developed to study multiple particles in the same environment at the same time.

  11. Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures

    SciTech Connect (OSTI)

    Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T.

    1994-10-01T23:59:59.000Z

    Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of uranium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

  12. Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures

    SciTech Connect (OSTI)

    Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T. [Lawrence Livermore National Lab., CA (United States)

    1994-12-31T23:59:59.000Z

    Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of titanium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

  13. atmospheric water transport: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stenzel, Oliver J 2009-01-01 2 Atmospheric Water Vapor Transport and the Water Balance of North America: Part I CiteSeer Summary: The atmospheric water vapor flux divergence and...

  14. Vapor generation methods for explosives detection research. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vapor generation methods for explosives detection research. Vapor generation methods for explosives detection research. Abstract: The generation of calibrated vapor samples of...

  15. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

    1983-02-08T23:59:59.000Z

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

  16. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

    1997-09-02T23:59:59.000Z

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

  17. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J. Randall (Albuquerque, NM); Dominguez, Frank (Albuquerque, NM); Johnson, A. Wayne (Albuquerque, NM); Omstead, Thomas R. (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

  18. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R

    2012-10-23T23:59:59.000Z

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  19. Research on thermophoretic and inertial aspects of the ash particle deposition on heat exchanger surfaces in coal-fired equipment

    SciTech Connect (OSTI)

    Rosner, D.E.

    1986-12-01T23:59:59.000Z

    In support of the above mentioned objectives, we have initiated theoretical studies in the following three interrelated areas : (a) Interaction of inertial- and thermophoretic effects in well-defined laminar dusty-gas'' flows. (b) Self-regulated sticking and deposit erosion in the simultaneous presence of vapor or submicron glue'' (c) Use of packed bed and tube-bank heat transfer and friction correlations to provide the basis for future tube-bank fouling predictions.During the first three months of Grant DE-FG22-86 PC 90756, we have: (1) Designed and initiated construction of the microcombustor particle-laden jet facility described in Section 3.1. (2) Initiated theoretical studies of the interaction of inertial and thermophoretic effects, the role of simultaneous vapor arrival in determining particle sticking and erosion probabilities, and mass transport phenomena in deep tube banks.

  20. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan (Golden, CO); Sheldon, Peter (Lakewood, CO)

    1998-01-01T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  1. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  2. Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel and on Copper

    E-Print Network [OSTI]

    Chen, Yong P.

    transport properties of graphene films grown on Ni and Cu. Sample Preparation The synthesis of graphene film1 Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel of large scale graphene films grown by chemical vapor synthesis on Ni and Cu, and then transferred to SiO2

  3. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  4. Robust Numerical Simulation of Porosity Evolution in Chemical Vapor In ltration II: Two Dimensional

    E-Print Network [OSTI]

    Jin, Shi

    -solid reactions with solid deposition are exempli#12;ed by the fabrication of ceramic matrix composites through #3) process, during which a matrix of ceramic #12;bers is chemically vapor deposited within a porous preform practical approach to fabricate ceramic composites. Among these composites, #12;ber-reinforced composites

  5. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

    2008-05-20T23:59:59.000Z

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  6. Method and apparatus for transport, introduction, atomization and excitation of emission spectrum for quantitative analysis of high temperature gas sample streams containing vapor and particulates without degradation of sample stream temperature

    DOE Patents [OSTI]

    Eckels, David E. (Ankeny, IA); Hass, William J. (Ames, IA)

    1989-05-30T23:59:59.000Z

    A sample transport, sample introduction, and flame excitation system for spectrometric analysis of high temperature gas streams which eliminates degradation of the sample stream by condensation losses.

  7. Overview of experimental support for fission-product transport analyses at Oak Ridge National Laboratory

    SciTech Connect (OSTI)

    Wichner, R.P.

    1983-01-01T23:59:59.000Z

    The program was designed to determine fission product and aerosol release rates from irradiated fuel under accident conditions, to identify the chemical forms of the released material, and to correlate the results with experimental and specimen conditions with the data from related experiments. These tests of PWR fuel were conducted and fuel specimen and test operating data are presented. The nature and rate of fission product vapor interaction with aerosols were studied. Aerosol deposition rates and transport in the reactor vessel during LWR core-melt accidents were studied. The Nuclear Safety Pilot Plant is dedicated to developing an expanded data base on the behavior of aerosols generated during a severe accident.

  8. To estimate vapor pressure easily

    SciTech Connect (OSTI)

    Yaws, C.L.; Yang, H.C. (Lamar Univ., Beaumont, TX (USA))

    1989-10-01T23:59:59.000Z

    Vapor pressures as functions of temperature for approximately 700 major organic chemical compounds are given. The tabulation also gives the temperature range for which the data are applicable. Minimum and maximum temperatures are denoted by TMIN and TMAX. The Antoine equation that correlates vapor pressure as a function of temperature is described. A representative comparison of calculated and actual data values for vapor pressure is shown for ethyl alcohol. The coefficient tabulation is based on both literature (experimental data) and estimated values.

  9. Water Vapor Experiment Concludes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps1DOE AwardsDNitrateEnergyNews3 Water Vapor

  10. ARM Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProducts (VAP) VAP Update Information on new,Scanning Radar323ARM Water Vapor IOP

  11. Synthesis and deposition of metal nanoparticles by gas condensation process

    SciTech Connect (OSTI)

    Maicu, Marina, E-mail: marina.maicu@fep.fraunhofer.de; Glöß, Daniel; Frach, Peter [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden (Germany); Schmittgens, Ralph; Gerlach, Gerald [Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany); Hecker, Dominic [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden, Germany and Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany)

    2014-03-15T23:59:59.000Z

    In this work, the synthesis of Pt and Ag nanoparticles by means of the inert gas phase condensation of sputtered atomic vapor is presented. The process parameters (power, sputtering time, and gas flow) were varied in order to study the relationship between deposition conditions and properties of the nanoparticles such as their quantity, size, and size distribution. Moreover, the gas phase condensation process can be combined with a plasma enhanced chemical vapor deposition procedure in order to deposit nanocomposite coatings consisting of metallic nanoparticles embedded in a thin film matrix material. Selected examples of application of the generated nanoparticles and nanocomposites are discussed.

  12. Atmospheric Transport of Radionuclides

    SciTech Connect (OSTI)

    Crawford, T.V.

    2003-03-03T23:59:59.000Z

    The purpose of atmospheric transport and diffusion calculations is to provide estimates of concentration and surface deposition from routine and accidental releases of pollutants to the atmosphere. This paper discusses this topic.

  13. In situ analysis of ash deposits from black liquor combustion

    SciTech Connect (OSTI)

    Bernath, P. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Toronto, Ontario (Canada); Sinquefield, S.A. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Oregon State Univ., Eugene, OR (United States); Baxter, L.L.; Sclippa, G.; Rohlfing, C. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility; Barfield, M. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Arizona, Tucson, AZ (United States)

    1996-05-01T23:59:59.000Z

    Aerosols formed during combustion of black liquor cause a significant fire-side fouling problem in pulp mill recovery boilers. The ash deposits reduce heat transfer effectiveness, plug gas passages, and contribute to corrosion. Both vapors and condensation aerosols lead to the formation of such deposits. The high ash content of the fuel and the low dew point of the condensate salts lead to a high aerosol and vapor concentration in most boilers. In situ measurements of the chemical composition of these deposits is an important step in gaining a fundamental understanding of the deposition process. Infrared emission spectroscopy is used to characterize the composition of thin film deposits resulting from the combustion of black liquor and the deposition of submicron aerosols and vapors. New reference spectra of Na{sub 2}SO{sub 4}, K{sub 2}SO{sub 4}, Na{sub 2}CO{sub 3} and K{sub 2}CO{sub 3} pure component films were recorded and compared with the spectra of the black liquor deposit. All of the black liquor emission bands were identified using a combination of literature data and ab initio calculations. Ab initio calculations also predict the locations and intensities of bands for the alkali vapors of interest. 39 refs., 9 figs.

  14. Compositional Variations in Vapor Deposited Samarium Zirconate Coatings

    E-Print Network [OSTI]

    Wadley, Haydn

    section of the engine (the combustor and high pressure turbine). The blades at the inlet of the high temperatures instead have relied on the development of thermal barrier coating (TBC) systems. The thermal coat applied to the superalloy surface, (ii) a thermally grown oxide layer (TGO) that forms on the bond

  15. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01T23:59:59.000Z

    Journal of MicroElectroMechanical Systems, vol. 20, pp. 9-Chair MEMS (Microelectromechanical Systems) technologiesby MEMS (Microelectromechanical Systems) technologies many

  16. Vapor deposited samarium zirconate thermal barrier coatings Hengbei Zhao a,

    E-Print Network [OSTI]

    Wadley, Haydn

    technology for the gas turbine engines used for propulsion and power generation [1]. Through their ability conductivity (~2.1 W m- 1 K- 1 at 1000 T1200 °C [9]), its thermochemical compatibility with the underlying TGO

  17. Graphene growth with giant domains using chemical vapor deposition

    E-Print Network [OSTI]

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01T23:59:59.000Z

    N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

  18. Sandia National Laboratories: metal organic chemical vapor deposition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partnership, Research & Capabilities, Solid-State Lighting Solid state lighting (SSL), which uses light-emitting diodes (LEDs), has the potential to be 10 times more energy...

  19. Vapor-Wall Deposition in Chambers: Theoretical Considerations

    E-Print Network [OSTI]

    McVay, Renee C; Cappa, Christopher D; Seinfeld, John H

    2014-01-01T23:59:59.000Z

    aerosol size distribution changes continuously as particles grow by condensation and are lost by coagulation

  20. Hot-Wire Chemical Vapor Deposition (HWCVD) technologies - Energy Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh School football Highdefault Sign InDataCenterCenterPortal

  1. Vapor Retarder Classification - Building America Top Innovation...

    Energy Savers [EERE]

    the Top Innovation. See an example of vapor retarder best practices in action. Find other case studies of Building America projects across the country that utilizes vapor retarder...

  2. Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid-Vapor Pressure Isotope Effects

    E-Print Network [OSTI]

    Chickos, James S.

    Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid hydrocarbons and their perdeuterated analogues have been determined by correlation-gas chromatography of cyclohexane-d12 and benzene-d6. Other hydrocarbons studied include the perdeuterated forms of hexane, toluene

  3. Interactions between Liquid-Wall Vapor and Edge Plasmas

    SciTech Connect (OSTI)

    Rognlien, T D; Rensink, M E

    2000-05-25T23:59:59.000Z

    The use of liquid walls for fusion reactors could help solve problems associated with material erosion from high plasma heat-loads and neutronic activation of structures. A key issue analyzed here is the influx of impurity ions to the core plasma from the vapor of liquid side-walls. Numerical 2D transport simulations are performed for a slab geometry which approximates the edge region of a reactor-size tokamak. Both lithium vapor (from Li or SnLi walls) and fluorine vapor (from Flibe walls) are considered for hydrogen edge-plasmas in the high- and low-recycling regimes. It is found that the minimum influx is from lithium with a low-recycling hydrogen plasma, and the maximum influx occurs for fluorine with a high-recycling hydrogen plasma.

  4. Passive vapor extraction feasibility study

    SciTech Connect (OSTI)

    Rohay, V.J.

    1994-06-30T23:59:59.000Z

    Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft{sup 3}/min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft{sup 3}/min air flow rates, passive vapor extraction is more cost effective below 100 ppm.

  5. Laser induced thermophoresis and particulate deposition efficiency

    SciTech Connect (OSTI)

    Cipolla, J.; Morse, T.F.; Wang, C.Y.

    1983-07-01T23:59:59.000Z

    The interaction of laser radiation and an absorbing aerosol in a tube flow has been considered. The aerosol is produced by external heating of reactants as in the MCVD (Modified Chemical Vapor Deposition) process to produce submicron size particles in the manufacture of optical fiber preforms. These are subsequently deposited by thermophoretic forces on the inner wall of the tube as they are convected by a Poiseuille velocity profile. Axial laser radiation in the tube interacts with the absorbing particles, and the laser heating of the gas induces additional thermophoretic forces that markedly increase the efficiency of particulate deposition. A particle concentration dependent absorption coefficient that appears in the energy equation couples the energy equation to the equation of particle conservation, so that a non-linear set of coupled partial integrodifferential equations must be solved. Numerical solutions for aerosol particle trajectories, and thus deposition efficiencies, have been obtained. It is shown that laser enhanced thermophoresis markedly improves the deposition efficiency.

  6. Tribology Letters Vol. 10, No. 3, 2001 179 Activation of the SiC surface for vapor phase lubrication

    E-Print Network [OSTI]

    Gellman, Andrew J.

    above 500 C [2,3,11,12]. Since liquid lubricants cannot withstand such extreme conditions, a number deposition 1. Introduction The lubrication of ceramic surfaces working at extremely high temperatures has lubrication by Fe chemical vapor deposition from Fe(CO)5 Daxing Ren, Dougyong Sung and Andrew J. Gellman

  7. Portable vapor diffusion coefficient meter

    DOE Patents [OSTI]

    Ho, Clifford K. (Albuquerque, NM)

    2007-06-12T23:59:59.000Z

    An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

  8. Control of pyrophoricity in deposits produced by electron beam evaporation of uranium

    SciTech Connect (OSTI)

    Clifford, J.

    1980-07-01T23:59:59.000Z

    A description is given of an apparatus for reducing the pyrophoricity of deposits of a material evaporated within a chamber comprising: a sealed chamber defined by an enclosure; means for providing within said chamber an atmosphere of generally non-reactive nature; a reservoir of a material to ve evaporated; means for directing a vapor of said material from said reservoir into said chamber; at least one surface within said chamber in the path of the directed vapor and on which at least portions of the vaporized material deposits; means for cooling said enclosure to a temperature at which said vapor deposits at a relatively low pyrophoric density; and means for maintaining a temperature for said collection surfaces higher than the enclosure temperature to promote deposition of said material at a relatively higher density.

  9. Models of the atmospheric water vapor budget for the Texas HIPLEX area: by Steven Francis Williams.

    E-Print Network [OSTI]

    Williams, Steven Francis

    1979-01-01T23:59:59.000Z

    co:erage cf. convective activ' ty, Thus, the em&unt of convection seems to be more important than the type oz pr"se. . ce of convective activi!y. An increased tran:port of water vapor near ti e surface is -hown to be an important factor... of watc-. z vapor tnrough each later, l boundary shown in Fig. 1 can be comput d by substituting Eqs. (16) ? (19), reaper tively, into Eq. (14) . Th ' net transport of water vapor 'nt the volume through la+eral oouccdaries or t?:e net horizontal tran:;port...

  10. EFFECT OF FILTER TEMPERATURE ON TRAPPING ZINC VAPOR

    SciTech Connect (OSTI)

    Korinko, P.

    2011-03-25T23:59:59.000Z

    To address the {sup 65}Zn contamination issue in the TEF, a multi-task experimental program was initiated. The first experimental task was completed and is reported in Ref. 1. The results of the second experimental task are reported here. This task examined the effect of filter temperature on trapping efficiency and deposit morphology. Based on the first experimental tasks that examined filter pore size and trapping efficiency, stainless steel filter media with a 20 {micro}m pore size was selected. A series of experiments using these filters was conducted during this second task to determine the effect of filter temperature on zinc vapor trapping efficiency, adhesion and morphology. The tests were conducted with the filters heated to 60, 120, and 200 C; the zinc source material was heated to 400 C for all the experiments to provide a consistent zinc source. The samples were evaluated for mass change, deposit adhesion and morphology. As expected from the physical vapor deposition literature, a difference in deposit morphology and appearance was observed between the three filter temperatures. The filter held at 60 C had the largest average mass gain while the 120 and 200 C filters exhibited similar but lower weight gains. The standard deviations were large and suggest that all three temperatures exhibited comparable gains. No zinc was detected on the backside surface of the filters indicating high efficiency for front and internal trapping. A zinc rich deposit was formed on the surface of the 60 C filter. Based on a simple tape adhesion test, the surface zinc was readily removed from the 60 C filter while less zinc deposit was removed from the 120 and 200 C filter samples. It is surmised that the higher temperatures enable the zinc to deposit within the filter media rather than on the surface. Based on the findings that all three statistically trapped the same quantity of zinc vapor and that the higher temperatures resulted in a more adherent/better trapped product, operating the filters at 120 to 200 C is recommended.

  11. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Ellingboe, Albert R. (Fremont, CA)

    1999-01-01T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  12. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Jose, CA); Ellingboe, Albert R. (Malahide, IE)

    2008-01-01T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  13. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  14. Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

    SciTech Connect (OSTI)

    Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie, E-mail: jjli@iphy.ac.cn; Gu, Changzhi, E-mail: czgu@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institution of Physics Chinese Academy of Sciences, Beijing 100190 (China)

    2014-05-05T23:59:59.000Z

    B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3?K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63?nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

  15. Source replenishment device for vacuum deposition

    DOE Patents [OSTI]

    Hill, R.A.

    1986-05-15T23:59:59.000Z

    A material source replenishment device for use with a vacuum deposition apparatus is described. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

  16. Research on thermophoretic and inertial aspects of the ash particle deposition on heat exchanger surfaces in coal-fired equipment. Quarterly technical report, September 1, 1986--November 30, 1986

    SciTech Connect (OSTI)

    Rosner, D.E.

    1986-12-01T23:59:59.000Z

    In support of the above mentioned objectives, we have initiated theoretical studies in the following three interrelated areas : (a) Interaction of inertial- and thermophoretic effects in well-defined laminar ``dusty-gas`` flows. (b) Self-regulated sticking and deposit erosion in the simultaneous presence of vapor or submicron ``glue`` (c) Use of packed bed and tube-bank heat transfer and friction correlations to provide the basis for future tube-bank fouling predictions.During the first three months of Grant DE-FG22-86 PC 90756, we have: (1) Designed and initiated construction of the microcombustor particle-laden jet facility described in Section 3.1. (2) Initiated theoretical studies of the interaction of inertial and thermophoretic effects, the role of simultaneous vapor arrival in determining particle sticking and erosion probabilities, and mass transport phenomena in deep tube banks.

  17. Operational Challenges in Gas-To-Liquid (GTL) Transportation Through Trans Alaska Pipeline System (TAPS)

    SciTech Connect (OSTI)

    Godwin A. Chukwu; Santanu Khataniar; Shirish Patil; Abhijit Dandekar

    2006-06-30T23:59:59.000Z

    Oil production from Alaskan North Slope oil fields has steadily declined. In the near future, ANS crude oil production will decline to such a level (200,000 to 400,000 bbl/day) that maintaining economic operation of the Trans-Alaska Pipeline System (TAPS) will require pumping alternative products through the system. Heavy oil deposits in the West Sak and Ugnu formations are a potential resource, although transporting these products involves addressing important sedimentation issues. One possibility is the use of Gas-to-Liquid (GTL) technology. Estimated recoverable gas reserves of 38 trillion cubic feet (TCF) on the North Slope of Alaska can be converted to liquid with GTL technology and combined with the heavy oils for a product suitable for pipeline transport. Issues that could affect transport of this such products through TAPS include pumpability of GTL and crude oil blends, cold restart of the pipeline following a prolonged winter shutdown, and solids deposition inside the pipeline. This study examined several key fluid properties of GTL, crude oil and four selected blends under TAPS operating conditions. Key measurements included Reid Vapor Pressure, density and viscosity, PVT properties, and solids deposition. Results showed that gel strength is not a significant factor for the ratios of GTL-crude oil blend mixtures (1:1; 1:2; 1:3; 1:4) tested under TAPS cold re-start conditions at temperatures above - 20 F, although Bingham fluid flow characteristics exhibited by the blends at low temperatures indicate high pumping power requirements following prolonged shutdown. Solids deposition is a major concern for all studied blends. For the commingled flow profile studied, decreased throughput can result in increased and more rapid solid deposition along the pipe wall, resulting in more frequent pigging of the pipeline or, if left unchecked, pipeline corrosion.

  18. Image Storage in Hot Vapors

    E-Print Network [OSTI]

    L. Zhao; T. Wang; Y. Xiao; S. F. Yelin

    2007-10-22T23:59:59.000Z

    We theoretically investigate image propagation and storage in hot atomic vapor. A $4f$ system is adopted for imaging and an atomic vapor cell is placed over the transform plane. The Fraunhofer diffraction pattern of an object in the object plane can thus be transformed into atomic Raman coherence according to the idea of ``light storage''. We investigate how the stored diffraction pattern evolves under diffusion. Our result indicates, under appropriate conditions, that an image can be reconstructed with high fidelity. The main reason for this procedure to work is the fact that diffusion of opposite-phase components of the diffraction pattern interfere destructively.

  19. Vapor explosion in the RIA-ST-4 experiment. [BWR

    SciTech Connect (OSTI)

    El-Genk, M.S.

    1980-01-01T23:59:59.000Z

    A concern in assuring the safety of commercial light water reactors (LWRs) is whether core overheating, during which molten fuel is produced, can lead to massive vaporization of the coolant and shock pressurization of the system due to an energetic molten fuel-coolant interaction (MFCI). The RIA-ST-4 experiment was one of four scoping tests in the Reactivity Initiated Accident (RIA) Test Series which is being conducted in the Power Burst Facility (PBF) to define an energy deposition failure threshold and to determine modes and consequences of fuel rod failure during a postulated boiling water reactor (BWR) control rod drop accident.

  20. Hydrogen Cars and Water Vapor

    E-Print Network [OSTI]

    Colorado at Boulder, University of

    misidentified as "zero-emissions vehicles." Fuel cell vehicles emit water vapor. A global fleet could have, with discernible effects on people and ecosystems. The broad environmental effects of fuel cell vehicles. This cycle is currently under way with hydrogen fuel cells. As fuel cell cars are suggested as a solution

  1. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K. (Charleston, WV)

    1991-01-01T23:59:59.000Z

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  2. TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS

    SciTech Connect (OSTI)

    Michael Volk; Cem Sarica

    2003-10-01T23:59:59.000Z

    As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multiphase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines. The following deliverables are scheduled during the first three projects of the program: (1) Single-Phase Studies, with three different black oils, which will yield an enhanced computer code for predicting paraffin deposition in deepwater and surface pipelines. (2) Two-Phase Studies, with a focus on heat transfer and paraffin deposition at various pipe inclinations, which will be used to enhance the paraffin deposition code for gas-liquid flow in pipes. (3) Deposition Physics and Water Impact Studies, which will address the aging process, improve our ability to characterize paraffin deposits and enhance our understanding of the role water plays in paraffin deposition in deepwater pipelines. As in the previous two studies, knowledge gained in this suite of studies will be integrated into a state-of-the-art three-phase paraffin deposition computer program.

  3. Vapor canister heater for evaporative emissions systems

    SciTech Connect (OSTI)

    Bishop, R.P.; Berg, P.G.

    1987-01-01T23:59:59.000Z

    Automotive evaporative emissions systems use a charcoal canister to store evaporative hydrocarobn emissions. These stored vapors are later purged and burned during engine operation. Under certain conditions the engine cannot completely purge the canister of the stored fuel vapors, which results in a decreased vapor storage capacity in the canister. A self-regulating PTC (Positive Temperature Coefficient) heater has been developed to warm the purge air as it enters the canister, in order to provide thermal energy for increased release of the vapors from charcoal sites. This paper describes the construction and operation of the vapor canister heater as it relates to improved evaporative emission system performance.

  4. Analysis of emitter material transport in thermionic converter

    SciTech Connect (OSTI)

    Paramonov, D.V.; El-Genk, M.S. [Institute for Space and Nuclear Power Studies, Chemical and Nuclear Engineering Department, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    1996-03-01T23:59:59.000Z

    Output power and efficiency of a thermionic converter depend on temperatures, cesiated work functions, and emissivities of electrodes as well as the interelectrode gap size. Operation lifetime of a thermionic converter is directly related to the values as well as the stability of these parameters, which can be seriously altered by the transport of emitter material to the collector during operation. Loss rate of tungsten, a preferred emitter material, by sublimation at typical operating temperatures is small (about 3{times}10{sup 7} atom/cm{sup 2}sec at 2000 K). The loss rate, however, can be several orders of magnitude higher in the presence of gaseous contaminants. Accelerated transport of emitter material to collector surface changes the effective emissivity and work functions of the electrodes, resulting in performance degradation. A phenomenological model was developed to simulate emitter material transport to the collector in the presence of oxygen, water vapor, and carbon oxide contaminants. The model accounts for interaction of these contaminants with both emitter and collector. Model results were in agreement with experimental data and theoretical results of other investigators. An analysis was performed to determine steady-state chemical composition of deposited material onto the collector surface in the presence of H{sub 2}O, O{sub 2}, and H{sub 2} gaseous contaminants. {copyright} {ital 1996 American Institute of Physics.}

  5. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, Larry W. (Oswego, IL)

    1984-01-01T23:59:59.000Z

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  6. 3708 IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING, VOL. 47, NO. 11, NOVEMBER 2009 Retrieval of Atmospheric Water Vapor Density With

    E-Print Network [OSTI]

    Reising, Steven C.

    3708 IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING, VOL. 47, NO. 11, NOVEMBER 2009 Retrieval, remote sensing, water vapor. Manuscript received November 1, 2008; revised May 2, 2009 and August 8, 2009 the latent heat of vaporization is a principal mechanism for the transport of energy from the equatorial

  7. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  8. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  9. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  10. Modeling non-isothermal multiphase multi-species reactive chemical transport in geologic media

    SciTech Connect (OSTI)

    Tianfu Xu; Gerard, F.; Pruess, K.; Brimhall, G.

    1997-07-01T23:59:59.000Z

    The assessment of mineral deposits, the analysis of hydrothermal convection systems, the performance of radioactive, urban and industrial waste disposal, the study of groundwater pollution, and the understanding of natural groundwater quality patterns all require modeling tools that can consider both the transport of dissolved species as well as their interactions with solid (or other) phases in geologic media and engineered barriers. Here, a general multi-species reactive transport formulation has been developed, which is applicable to homogeneous and/or heterogeneous reactions that can proceed either subject to local equilibrium conditions or kinetic rates under non-isothermal multiphase flow conditions. Two numerical solution methods, the direct substitution approach (DSA) and sequential iteration approach (SIA) for solving the coupled complex subsurface thermo-physical-chemical processes, are described. An efficient sequential iteration approach, which solves transport of solutes and chemical reactions sequentially and iteratively, is proposed for the current reactive chemical transport computer code development. The coupled flow (water, vapor, air and heat) and solute transport equations are also solved sequentially. The existing multiphase flow code TOUGH2 and geochemical code EQ3/6 are used to implement this SIA. The flow chart of the coupled code TOUGH2-EQ3/6, required modifications of the existing codes and additional subroutines needed are presented.

  11. Robust Numerical Simulation of Porosity Evolution in Chemical Vapor Infiltration I: Two Space

    E-Print Network [OSTI]

    Jin, Shi

    infiltration (CVI) process is an important approach to fabricating ceramic matrix composite(CMC's). Two. In CVI a vapor precursor of the matrix material, such as methyl­ trichlorosilane (MTS), diffuses through the inter­fiber void. As matrix growth progresses, avenues for gas transport become more tortuous and begin

  12. Water Vapor and Mechanical Work: A Comparison of Carnot and Steam Cycles OLIVIER PAULUIS

    E-Print Network [OSTI]

    Pauluis, Olivier M.

    Water Vapor and Mechanical Work: A Comparison of Carnot and Steam Cycles OLIVIER PAULUIS Center in the atmosphere is discussed here by comparing two idealized heat engines: the Carnot cycle and the steam cycle. A steam cycle transports water from a warm moist source to a colder dryer sink. It acts as a heat engine

  13. Recirculating wedges for metal-vapor plasma tubes

    DOE Patents [OSTI]

    Hall, J.P.; Sawvel, R.M.; Draggoo, V.G.

    1994-06-28T23:59:59.000Z

    A metal vapor laser is disclosed that recycles condensed metal located at the terminal ends of a plasma tube back toward the center of the tube. A pair of arcuate wedges are incorporated on the bottom of the plasma tube near the terminal ends. The wedges slope downward toward the center so that condensed metal may be transported under the force of gravity away from the terminal ends. The wedges are curved to fit the plasma tube to thereby avoid forming any gaps within the tube interior. 8 figures.

  14. Recirculating wedges for metal-vapor plasma tubes

    DOE Patents [OSTI]

    Hall, Jerome P. (Livermore, CA); Sawvel, Robert M. (Modesto, CA); Draggoo, Vaughn G. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    A metal vapor laser is disclosed that recycles condensed metal located at the terminal ends of a plasma tube back toward the center of the tube. A pair of arcuate wedges are incorporated on the bottom of the plasma tube near the terminal ends. The wedges slope downward toward the center so that condensed metal may be transported under the force of gravity away from the terminal ends. The wedges are curved to fit the plasma tube to thereby avoid forming any gaps within the tube interior.

  15. Control of flow through a vapor generator

    DOE Patents [OSTI]

    Radcliff, Thomas D.

    2005-11-08T23:59:59.000Z

    In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

  16. VAPOR SPACE AND LIQUID/AIR INTERFACECORROSION TESTS

    SciTech Connect (OSTI)

    Zapp, P.; Hoffman, E.

    2009-11-09T23:59:59.000Z

    The phenomena of vapor space corrosion and liquid/air interface corrosion of carbon steel in simulated liquid waste environments have been investigated. Initial experiments have explored the hypothesis that vapor space corrosion may be accelerated by the formation of a corrosive electrolyte on the tank wall by a process of evaporation of relatively warmer waste and condensation of the vapor on the relatively cooler tank wall. Results from initial testing do not support the hypothesis of electrolyte transport by evaporation and condensation. The analysis of the condensate collected by a steel specimen suspended over a 40 C simulated waste solution showed no measurable concentrations of the constituents of the simulated solution and a decrease in pH from 14 in the simulant to 5.3 in the condensate. Liquid/air interface corrosion was studied as a galvanic corrosion system, where steel at the interface undergoes accelerated corrosion while steel in contact with bulk waste is protected. The zero-resistance-ammeter technique was used to measure the current flow between steel specimens immersed in solutions simulating (1) the high-pH bulk liquid waste and (2) the expected low-pH meniscus liquid at the liquid/air interface. Open-circuit potential measurements of the steel specimens were not significantly different in the two solutions, with the result that (1) no consistent galvanic current flow occurred and (2) both the meniscus specimen and bulk specimen were subject to pitting corrosion.

  17. Current status, research needs, and opportunities in applications of surface processing to transportation and utilities technologies. Proceedings of a December 1991 workshop

    SciTech Connect (OSTI)

    Czanderna, A.W.; Landgrebe, A.R. [eds.

    1992-09-01T23:59:59.000Z

    Goal of surface processing is to develop innovative methods of surface modification and characterization for optimum performance and environmental protection for cost-effective operational lifetimes of systems, materials, and components used in transportation and utilities. These proceedings document the principal discussions and conclusions reached at the workshop; they document chapters about the current status of surface characterization with focus on composition, structure, bonding, and atomic-scale topography of surfaces. Also documented are chapters on the current status of surface modification techniques: electrochemical, plasma-aided, reactive and nonreactive physical vapor deposition, sol-gel coatings, high-energy ion implantation, ion-assisted deposition, organized molecular assemblies, solar energy. Brief chapters in the appendices document basic research in surface science by NSF, Air Force, and DOE. Participants at the workshop were invited to serve on 10 working groups. Separate abstracts were prepared for the data base where appropriate.

  18. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, Don G. (Livermore, CA); Miller, John L. (Dublin, CA)

    1993-01-01T23:59:59.000Z

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  19. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, D.G.; Miller, J.L.

    1993-02-23T23:59:59.000Z

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  20. Overview of chemical vapor infiltration

    SciTech Connect (OSTI)

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01T23:59:59.000Z

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  1. Wick for metal vapor laser

    DOE Patents [OSTI]

    Duncan, David B. (Livermore, CA)

    1992-01-01T23:59:59.000Z

    An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

  2. Desalination of water by vapor transport through hydrophobic nanopores

    E-Print Network [OSTI]

    Lee, Jongho, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    Although Reverse osmosis (RO) is the state-of-the-art desalination technology, it still suffers from persistent drawbacks including low permeate flux, low selectivity for non-ionic species, and lack of resistance to chlorine. ...

  3. THERMODYNAMIC AND TRANSPORT PROPERTIES OF SODIUM LIQUID AND VAPOR

    E-Print Network [OSTI]

    Kemner, Ken

    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Enthalpy and Heat Capacity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.1.2 Heat Capacity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Heat Capacity at Constant Pressure, CP . . . . . . . . . . . . . . . . . . . . . . . . 13 Heat

  4. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17T23:59:59.000Z

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  5. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, V.J.; Johnson, S.A.

    1999-08-03T23:59:59.000Z

    A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

  6. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, Vincent J. (Downers Grove, IL); Johnson, Stanley A. (Countryside, IL)

    1999-01-01T23:59:59.000Z

    A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

  7. Tropospheric water vapor and climate sensitivity

    SciTech Connect (OSTI)

    Schneider, E.K.; Kirtman, B.P.; Lindzen, R.S. [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)] [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)

    1999-06-01T23:59:59.000Z

    Estimates are made of the effect of changes in tropospheric water vapor on the climate sensitivity to doubled carbon dioxide (CO{sub 2}) using a coarse resolution atmospheric general circulation model coupled to a slab mixed layer ocean. The sensitivity of the model to doubled CO{sub 2} is found as the difference between the equilibrium responses for control and doubled CO{sub 2} cases. Clouds are specified to isolate the water vapor feedback. Experiments in which the water vapor distribution is specified rather than internally calculated are used to find the contribution of water vapor in various layers and latitude belts to the sensitivity. The contribution of water vapor in layers of equal mass to the climate sensitivity varies by about a factor of 2 with height, with the largest contribution coming from layers between 450 and 750 mb, and the smallest from layers above 230 mb. The positive feedback on the global mean surface temperature response to doubled CO{sub 2} from water vapor above 750 mb is about 2.6 times as large as that from water vapor below 750 mb. The feedback on global mean surface temperature due to water vapor in the extratropical free troposphere is about 50% larger than the feedback due to the lower-latitude free troposphere water vapor. Several important sources of nonlinearity of the radiative heating rates were identified in the process of constructing the specified cloud and water vapor fields. These are (1) the interaction of clouds and solar radiation, which produces much more reflection of solar radiation for time mean clouds than for the instantaneous clouds; (2) the correlation of clouds and water vapor, which produces less downward longwave radiation at the ground for correlated clouds and water vapor than when these fields are independent; and (3) the interaction of water vapor with long wave radiation, which produces less downward longwave radiation at the ground of the average over instantaneous water vapor distributions than of the time mean water vapor distribution.

  8. TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS

    SciTech Connect (OSTI)

    Cem Sarica; Michael Volk

    2004-06-01T23:59:59.000Z

    As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multi-phase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines, because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines.

  9. Adsorption of water vapor on reservoir rocks. First quarterly report, January--March 1993

    SciTech Connect (OSTI)

    Not Available

    1993-07-01T23:59:59.000Z

    Progress is reported on: adsorption of water vapor on reservoir rocks; theoretical investigation of adsorption; estimation of adsorption parameters from transient experiments; transient adsorption experiment -- salinity and noncondensible gas effects; the physics of injection of water into, transport and storage of fluids within, and production of vapor from geothermal reservoirs; injection optimization at the Geysers Geothermal Field; a model to test multiwell data interpretation for heterogeneous reservoirs; earth tide effects on downhole pressure measurements; and a finite-difference model for free surface gravity drainage well test analysis.

  10. Development of chemical vapor composites, CVC materials. Final report

    SciTech Connect (OSTI)

    NONE

    1998-10-05T23:59:59.000Z

    Industry has a critical need for high-temperature operable ceramic composites that are strong, non-brittle, light weight, and corrosion resistant. Improvements in energy efficiency, reduced emissions and increased productivity can be achieved in many industrial processes with ceramic composites if the reaction temperature and pressure are increased. Ceramic composites offer the potential to meet these material requirements in a variety of industrial applications. However, their use is often restricted by high cost. The Chemical Vapor composite, CVC, process can reduce the high costs and multiple fabrication steps presently required for ceramic fabrication. CVC deposition has the potential to eliminate many difficult processing problems and greatly increase fabrication rates for composites. With CVC, the manufacturing process can control the composites` density, microstructure and composition during growth. The CVC process: can grow or deposit material 100 times faster than conventional techniques; does not require an expensive woven preform to infiltrate; can use high modulus fibers that cannot be woven into a preform; can deposit composites to tolerances of less than 0.025 mm on one surface without further machining.

  11. Enhancement of fine particle deposition to permeable sediments

    E-Print Network [OSTI]

    Fries, Jerry Stephen, 1972-

    2002-01-01T23:59:59.000Z

    Predictions of deposition rate are integral to the transport of many constituents including contaminants, organic matter, and larvae. Review of the literature demonstrates a general appreciation for the potential control ...

  12. LNG fire and vapor control system technologies

    SciTech Connect (OSTI)

    Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

    1982-06-01T23:59:59.000Z

    This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

  13. Quantitative organic vapor-particle sampler

    DOE Patents [OSTI]

    Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

    1998-01-01T23:59:59.000Z

    A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

  14. 6, 80698095, 2006 Water vapor in Asian

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    of Sciences, Beijing, China 2 National Center for Atmospheric Research, Boulder, CO, USA Received: 23 May 2006 vapor from European Center for Medium-Range Weather20 Forecasts (ECMWF) analyses. 1 Introduction Upper Tropospheric Water Vapor (UTWV) is a key greenhouse gas which exerts a major influence on the energy balance

  15. Oxygen-assisted room-temperature deposition of CoPt3 films with perpendicular magnetic anisotropy

    E-Print Network [OSTI]

    Hellman, Frances

    Oxygen-assisted room-temperature deposition of CoPt3 films with perpendicular magnetic anisotropy B Jolla, California 92093 Received 23 July 2002; accepted 30 September 2002 Trace amounts of oxygen CoPt3 grown by vapor deposition at or slightly above room temperature. Oxygen is known to act

  16. HANFORD CHEMICAL VAPORS WORKER CONCERNS & EXPOSURE EVALUATION

    SciTech Connect (OSTI)

    ANDERSON, T.J.

    2006-12-20T23:59:59.000Z

    Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank headspaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns. risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits-(OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors.

  17. Electron Beam-induced Light Emission and Transport in GaN Nanowires

    SciTech Connect (OSTI)

    Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V; Motayed, A

    2006-05-10T23:59:59.000Z

    We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long.

  18. Quantitative Infrared Intensity Studies of Vapor-PhaseGlyoxal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal, and 2,3-Butanedione (Diacetyl) with Quantitative Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal,...

  19. Absolute integrated intensities of vapor-phase hydrogen peroxide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Absolute integrated intensities of vapor-phase hydrogen peroxide (H202) in the mid-infrared at atmospheric pressure. Absolute integrated intensities of vapor-phase hydrogen...

  20. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Acidic Polymers for Chemical Vapor Sensing. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. Abstract: A review with 171 references. Hydrogen-bond acidic polymers for...

  1. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of October 1 to December 31, 1996. In particular, the sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. The computational model for simulating particle transport in turbulent flows was used to analyze the dispersion and deposition of particles in a recirculating flow region. The predictions of the particle resuspension model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as we as the surface roughness are included the model agrees with the available experimental data. Considerable progress was also made in the direct numerical simulation of particle removal process in turbulent gas flows. Experimental data for transport and deposition of glass fiber in the aerosol wind tunnel was also obtained.

  2. The interaction of flow, heat transfer, and free interfaces in an electron-beam vaporization system for metals

    SciTech Connect (OSTI)

    Westerberg, K.W. [Aspen Technology, Inc., Cambridge, MA (United States); McClelland, M.A. [Lawrence Livermore National Lab., CA (United States); Finlayson, B.A. [Univ. of Washington, Seattle, WA (United States)

    1994-11-01T23:59:59.000Z

    A numerical analysis is made of the liquid flow and energy transport in a system to vaporize metals. The energy from an electron beam heats metal confined in a water-cooled crucible. Metal vaporizes from a hot pool of circulating liquid which is surrounded by a shell of its own solid. Flow in the pool is strongly driven by temperature-induced buoyancy and capillary forces and is located in the transition region between laminar and turbulent flow. At high vaporization rates, the thrust of the departing vapor forms a trench at the beam impact site. A modified finite element method is used to calculate the flow and temperature fields coupled with the interface locations. The mesh is structured with spines that stretch and pivot as the interfaces move. The discretized equations are arranged in an {open_quotes}arrow{close_quotes} matrix and solved using the Newton-Raphson method. The electron-beam power and width are varied for cases involving the high-rate vaporization of aluminum. Attention is focused on the interaction of vaporization, liquid flow, and heat transport in the trench area.

  3. Recovering hydrocarbons from hydrocarbon-containing vapors

    DOE Patents [OSTI]

    Mirza, Zia I. (La Verne, CA); Knell, Everett W. (Los Alamitos, CA); Winter, Bruce L. (Danville, CA)

    1980-09-30T23:59:59.000Z

    Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

  4. Diatomaceous earth and activated bauxite used as granular sorbents for the removal of sodium chloride vapor from hot flue gas

    SciTech Connect (OSTI)

    Lee, S.H.D.; Swift, W.M.; Johnson, I.

    1980-01-01T23:59:59.000Z

    Diatomaceous earth and activated bauxite were tested as granular sorbents for use as filter media in granular-bed filters for the removal of gaseous alkali metal compounds from the hot (800/sup 0/C) flue gas of PFBC. Tests were performed at atmospheric pressure, using NaCl vapor transported in relatively dry simulated flue gas of PFBC. Either a fixed-bed combustor or a high-temperature sorption test rig was used. The effects of sorbent bed temperature, superficial gas velocity, gas hourly space velocity, and NaCl-vapor concentration in flue gas on the sorption behavior of these two sorbents and their ultimate sorption capacities were determined. Both diatomaceous earth and activated bauxite were found to be very effective in removing NaCl vapor from flue gas. Preliminary cost evaluations showed that they are economically attractive as granular sorbents for cleaning alkali vapor from simulated flue gas.

  5. Photo deposition of metal with far uv radiation

    SciTech Connect (OSTI)

    Blum, S.E.; Brown, K.H.

    1984-05-29T23:59:59.000Z

    A method for depositing a refractory metal onto a substrate is described wherein a carbonyl compound vapor of the metal in the vicinity of or on the substrate is photodecomposed by ultraviolet radiation of wavelengths less than 200 nm. This causes the release of atoms of the metal, which then condense onto the substrate. In an example, a tungsten layer is photodeposited by this method onto a GaAs semiconductor layer to form a Schottky barrier diode.

  6. Particle deposition in ventilation ducts

    E-Print Network [OSTI]

    Sippola, Mark R.

    2002-01-01T23:59:59.000Z

    and An Evaluation of Thermophoretic Deposition Rates C.1of estimated thermophoretic deposition velocities, v th+ ,of estimated thermophoretic deposition velocities, v th+ ,

  7. An advanced vapor-compression desalination system 

    E-Print Network [OSTI]

    Lara Ruiz, Jorge Horacio Juan

    2006-04-12T23:59:59.000Z

    Currently, the two dominant desalination methods are reverse osmosis (RO) and multi-stage flash (MSF). RO requires large capital investment and maintenance, whereas MSF is too energy intensive. An innovative vapor-compression desalination system...

  8. Modeling of LNG Pool Spreading and Vaporization

    E-Print Network [OSTI]

    Basha, Omar 1988-

    2012-11-20T23:59:59.000Z

    In this work, a source term model for estimating the rate of spreading and vaporization of LNG on land and sea is introduced. The model takes into account the composition changes of the boiling mixture, the varying thermodynamic properties due...

  9. Solid-Vapor Sorption Refrigeration Systems 

    E-Print Network [OSTI]

    Graebel, W.; Rockenfeller, U.; Kirol, L.

    1991-01-01T23:59:59.000Z

    SOLID-VAPOR SORPTION REFRIGERATION SYSTEMS DR. WILLIAM GRAEBEL DR. UWE ROCKENFELLER MR. LANCE KIROL Engineer President Chief Engineer Rocky Research Rocky Research Rocky Research Boulder city, NV Boulder city, NV Boulder City, NV Abstract.... Complex compounds have a number of advantages as working media, including: 43 SOLID-VAPOR SORPTION REFRIGERATION SYSTEMS DR. WILLIAM GRAEBEL Engineer Rocky Research Boulder city, NV DR. UWE ROCKENFELLER President Rocky Research Boulder city, NV MR...

  10. Panel 1 - comparative evaluation of deposition technologies

    SciTech Connect (OSTI)

    Fenske, G.R.; Stodolsky, F. [Argonne National Lab., IL (United States); Benson, D.K.; Pitts, R.J. [National Renewable Energy Lab., Golden, CO (United States); Bhat, D.G. [GTE Valenite Corp., Troy, MI (United States); Yulin Chen [Allison Gas Turbine Division, GM, Indianapolis, IN (United States); Gat, R.; Sunkara, M.K. [Case Western Reserve Univ., Cleveland, OH (United States); Kelly, M. [Stanford Univ., CA (United States); Lawler, J.E. [Univ. of Wisconsin, Madison (United States); Nagle, D.C. [Martin Marietta Labs., Baltimore, MD (United States); Outka, D. [Sandia National Laboratories, Livermore, CA (United States); Revankar, G.S. [Deere & Co., Moline, IL (United States); Subramaniam, V.V. [Ohio State Univ., Columbus (United States); Wilbur, P.J. [Colorado State Univ., Fort Collins (United States); Mingshow Wong [Northwestern Univ., Evanston, IL (United States); Woolam, W.E. [Southwest Research Inst., Arlington, VA (United States)

    1993-01-01T23:59:59.000Z

    This working group attempted to evaluate/compare the different types of deposition techniques currently under investigation for depositing diamond and diamond-like carbon films. A table lists the broad types of techniques that were considered for depositing diamond and diamond-like carbon films. After some discussion, it was agreed that any evaluation of the various techniques would be dependent on the end application. Thus the next action was to list the different areas where diamond and DLC films could find applications in transportation. These application areas are listed in a table. The table intentionally does not go into great detail on applications because that subject is dealt with specifically by Panel No. 4 - Applications To Transportation. The next action concentrated on identifying critical issues or limitations that need to be considered in evaluating the different processes. An attempt was then made to rank different broad categories of deposition techniques currently available or under development based on the four application areas and the limitations. These rankings/evaluations are given for diamond and DLC techniques. Finally, the working group tried to identify critical development and research issues that need to be incorporated into developing a long-term program that focuses on diamond/DLC coatings for transportation needs. 5 tabs.

  11. The influence of midlatitude and tropical overturning circulation on the isotopic composition of atmospheric water vapor and

    E-Print Network [OSTI]

    Noone, David

    coordinates. In this depiction, poleward transport of air and water vapor is non-diffusive, in a way for an open distillation. Model experiments that simulate a wide range of circulation strengths show to the polar region exceeds the rate at which surface sources replenish the poleward moving air stream. Across

  12. Sealable stagnation flow geometries for the uniform deposition of materials and heat

    DOE Patents [OSTI]

    McCarty, Kevin F. (Livermore, CA); Kee, Robert J. (Livermore, CA); Lutz, Andrew E. (Alamo, CA); Meeks, Ellen (Livermore, CA)

    2001-01-01T23:59:59.000Z

    The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.

  13. Charge Transport and Glassy Dynamics in Ionic Liquids

    SciTech Connect (OSTI)

    Sangoro, Joshua R [ORNL; Kremer, Friedrich [University of Leipzig

    2012-01-01T23:59:59.000Z

    Ionic liquids (ILs) exhibit unique features such as low melting points, low vapor pressures, wide liquidus temperature ranges, high thermal stability, high ionic conductivity, and wide electrochemical windows. As a result, they show promise for use in variety of applications: as reaction media, in batteries and supercapacitors, in solar and fuel cells, for electrochemical deposition of metals and semiconductors, for protein extraction and crystallization, and many others. Because of the ease with which they can be supercooled, ionic liquids offer new opportunities to investigate long-standing questions regarding the nature of the dynamic glass transition and its possible link to charge transport. Despite the significant steps achieved from experimental and theoretical studies, no generally accepted quantitative theory of dynamic glass transition to date has been capable of reproducing all the experimentally observed features. In this Account, we discuss recent studies of the interplay between charge transport and glassy dynamics in ionic liquids as investigated by a combination of several experimental techniques including broadband dielectric spectroscopy, pulsed field gradient nuclear magnetic resonance, dynamic mechanical spectroscopy, and differential scanning calorimetry. Based on EinsteinSmoluchowski relations, we use dielectric spectra of ionic liquids to determine diffusion coefficients in quantitative agreement with independent pulsed field gradient nuclear magnetic resonance measurements, but spanning a broader range of more than 10 orders of magnitude. This approach provides a novel opportunity to determine the electrical mobility and effective number density of charge carriers as well as their types of thermal activation from the measured dc conductivity separately. We also unravel the origin of the remarkable universality of charge transport in different classes of glass-forming ionic liquids.

  14. Light Transport in Cold Atoms and Thermal Decoherence G. Labeyrie,1,* D. Delande,2

    E-Print Network [OSTI]

    Light Transport in Cold Atoms and Thermal Decoherence G. Labeyrie,1,* D. Delande,2 R. Kaiser,1 experimentally and theoretically how coherent transport of light inside a cold atomic vapor is affected motivated by astrophysical purposes, wave transport in opaque media was first analyzed by means

  15. Local Transportation

    E-Print Network [OSTI]

    Local Transportation. Transportation from the Airport to Hotel. There are two types of taxi companies that operate at the airport: special and regular taxis (

  16. Greening Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Goal 2: Greening Transportation LANL supports and encourages employees to reduce their personal greenhouse gas emissions by offering various commuting and work...

  17. Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)

    E-Print Network [OSTI]

    Trujillo, Nathan J. (Nathan Jeffrey)

    2010-01-01T23:59:59.000Z

    The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher ...

  18. Apparatus for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, P.L.; Giammarise, A.W.

    1995-02-21T23:59:59.000Z

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice`s interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figs.

  19. Process for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, Paul L. (5139 Fox Park Dr., Fairview, PA 16415); Giammarise, Anthony W. (527 Lincoln Ave., Erie, PA 16505)

    1991-01-01T23:59:59.000Z

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance toerosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

  20. Process for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, P.L.; Giammarise, A.W.

    1991-10-29T23:59:59.000Z

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

  1. Apparatus for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, Paul L. (Fairview, PA); Giammarise, Anthony W. (Erie, PA)

    1995-01-01T23:59:59.000Z

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

  2. Chamber transport

    SciTech Connect (OSTI)

    OLSON,CRAIG L.

    2000-05-17T23:59:59.000Z

    Heavy ion beam transport through the containment chamber plays a crucial role in all heavy ion fusion (HIF) scenarios. Here, several parameters are used to characterize the operating space for HIF beams; transport modes are assessed in relation to evolving target/accelerator requirements; results of recent relevant experiments and simulations of HIF transport are summarized; and relevant instabilities are reviewed. All transport options still exist, including (1) vacuum ballistic transport, (2) neutralized ballistic transport, and (3) channel-like transport. Presently, the European HIF program favors vacuum ballistic transport, while the US HIF program favors neutralized ballistic transport with channel-like transport as an alternate approach. Further transport research is needed to clearly guide selection of the most attractive, integrated HIF system.

  3. Research on thermophoretic and inertial aspects of ash particle deposition on heat exchanger surfaces in coal-fired equipment: Quarterly technical report, June 1, 1987-August 31, 1987

    SciTech Connect (OSTI)

    Rosner, D.E.

    1987-09-01T23:59:59.000Z

    Our emphasis in the present program is on experimentally validating and developing rational, theoretical methods of predicting the role of inertia and ash particle thermophoresis in determining net deposition rates. We also wish to quantify how simultaneous vapor deposition (e.g., alkali sulfate) can influence the sticking and erosion associated with impacting particles. 6 refs., 2 figs.

  4. Metal vapor target for precise studies of ion-atom collisions

    SciTech Connect (OSTI)

    Chen, W., E-mail: w.chen@gsi.de; Vorobyev, G.; Herfurth, F.; Hillenbrand, P.-M.; Spillmann, U. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Guo, D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 Gansu (China); Trotsenko, S. [Helmholtz-Institut Jena Fröbelstieg 3, 07743 Jena (Germany); Gumberidze, A. [ExtreMe Matter Institute EMMI and Research Division, GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); FIAS Frankfurt Institute for Advanced Studies, 60438 Frankfurt am Main (Germany); Stöhlker, Th. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Helmholtz-Institut Jena Fröbelstieg 3, 07743 Jena (Germany)

    2014-05-15T23:59:59.000Z

    Although different ion-atom collisions have been studied in various contexts, precise values of cross-sections for many atomic processes were seldom obtained. One of the main uncertainties originates from the value of target densities. In this paper, we describe a unique method to measure a target density precisely with a combination of physical vapor deposition and inductively coupled plasma optical emission spectrometry. This method is preliminarily applied to a charge transfer cross-section measurement in collisions between highly charged ions and magnesium vapor. The final relative uncertainty of the target density is less than 2.5%. This enables the precise studies of atomic processes in ion-atom collisions, even though in the trial test the deduction of precise capture cross-sections was limited by other systematic errors.

  5. Method and Apparatus for Concentrating Vapors for Analysis

    DOE Patents [OSTI]

    Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

    2008-10-07T23:59:59.000Z

    An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

  6. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of January I to March 31, 1998. The direct numerical simulation of particle removal process in turbulent gas flows was completed. Variations of particle trajectories are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity for irregular fibrous particles is compared with the empirical correlation and the available data for glass fibers and discussed. Additional progress on the sublayer model for evaluating the particle deposition and resuspension in turbulent flows was made.

  7. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2007-10-23T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  8. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2006-07-26T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  9. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, T.

    1988-03-15T23:59:59.000Z

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

  10. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, Terry (Tracy, CA)

    1988-01-01T23:59:59.000Z

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself.

  11. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    SciTech Connect (OSTI)

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20T23:59:59.000Z

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  12. ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20T23:59:59.000Z

    A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

  13. Dry deposition of gaseous elemental iodine on water

    E-Print Network [OSTI]

    Allen, Michael Dana

    1974-01-01T23:59:59.000Z

    after they strike the surface. Aerodynamic mechanisms of mass transport have previously been listed; processes by which particles or gases "stick" to a collection medium are vagueIy reported as impaction, adsorption, electrostatic forces, snd... and vapors. The height at which the (4) volumetric concentration is measured should 'be reported in conJunction with an experimental value of V, but, in geners1, except for very close to the surface, the concentration does not change appreciably...

  14. Instrument Series: Deposition and Microfabrication Sputter Deposition

    E-Print Network [OSTI]

    heating for attaining precise and repeatable growth conditions Substrate rotation ­ provides variable-speed offers operational flexibility, efficiency, and control, allowing a range of applications and materials and solid oxide fuel cells and solar cells for energy generation Microfabrication ­ deposition

  15. Solution deposition assembly

    DOE Patents [OSTI]

    Roussillon, Yann; Scholz, Jeremy H; Shelton, Addison; Green, Geoff T; Utthachoo, Piyaphant

    2014-01-21T23:59:59.000Z

    Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber, at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

  16. Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions 

    E-Print Network [OSTI]

    Kirol, L.

    1987-01-01T23:59:59.000Z

    Chemical heat pumps utilizing liquid-vapor reactions can be configured in forms analogous to electric drive vapor-compression heat pumps and heat activated absorption heat pumps. Basic thermodynamic considerations eliminate some heat pumps and place...

  17. Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-10-01T23:59:59.000Z

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  18. Vapor intrusion modeling : limitations, improvements, and value of information analyses

    E-Print Network [OSTI]

    Friscia, Jessica M. (Jessica Marie)

    2014-01-01T23:59:59.000Z

    Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

  19. OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL

    E-Print Network [OSTI]

    Stanford University

    OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL RESERVOIRS CONSIDERING ADSORPTION governing the behavior of vapor- dominated geothermal reservoirs. These mechanisms affect both was to determine the most effective injection strategy once these two effects are considered. Geothermal reservoir

  20. Droplet destabilization during Bi catalyzed vapor-liquuid-solid growth of GaAs

    SciTech Connect (OSTI)

    DeJarld, M., E-mail: mdejarld@umich.edu; Nothern, D.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan 2300 Hayward Street, Ann Arbor, Michigan 48105 (United States)

    2014-03-21T23:59:59.000Z

    GaAs nanodiscs are grown in a molecular beam epitaxy chamber via the vapor-liquid-solid mechanism with liquid Bi as the catalyst. Each nanostructure consists of a series of increasingly larger overlapping discs. The structure forms during deposition due to the fact that the catalyst grows until reaching a critical size whereupon it destabilizes, dropping off the disc onto the substrate, where it catalyzes the growth of a new disc of larger radius. It is shown that critical size is limited by the sidewall wetting with a contact angle significantly smaller than the Gibb's criterion.

  1. Advancing Explosives Detection Capabilities: Vapor Detection

    ScienceCinema (OSTI)

    Atkinson, David

    2014-07-24T23:59:59.000Z

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  2. Vaporization of synthetic fuels. Final report. [Thesis

    SciTech Connect (OSTI)

    Sirignano, W.A.; Yao, S.C.; Tong, A.Y.; Talley, D.

    1983-01-01T23:59:59.000Z

    The problem of transient droplet vaporization in a hot convective environment is examined. The main objective of the present study is to develop an algorithm for the droplet vaporization which is simple enough to be feasibly incorporated into a complete spray combustion analysis and yet will also account for the important physics such as liquid-phase internal circulation, unsteady droplet heating and axisymmetric gas-phase convection. A simplified liquid-phase model has been obtained based on the assumption of the existence of a Hill's spherical vortex inside the droplet together with some approximations made in the governing diffusion equation. The use of the simplified model in a spray situation has also been examined. It has been found that droplet heating and vaporization are essentially unsteady and droplet temperature is nonuniform for a significant portion of its lifetime. It has also been found that the droplet vaporization characteristic can be quite sensitive to the particular liquid-phase and gas-phase models. The results of the various models are compared with the existing experimental data. Due to large scattering in the experimental measurements, particularly the droplet diameter, no definite conclusion can be drawn based on the experimental data. Finally, certain research problems which are related to the present study are suggested for future studies.

  3. Atomic-vapor-laser isotope separation

    SciTech Connect (OSTI)

    Davis, J.I.

    1982-10-01T23:59:59.000Z

    This paper gives a brief history of the scientific considerations leading to the development of laser isotope separation (LIS) processes. The close relationship of LIS to the broader field of laser-induced chemical processes is evaluated in terms of physical criteria to achieve an efficient production process. Atomic-vapor LIS processes under development at Livermore are reviwed. 8 figures.

  4. Program performs vapor-liquid equilibrium calculations

    SciTech Connect (OSTI)

    Rice, V.L.

    1982-06-28T23:59:59.000Z

    A program designed for the Hewlett-Packard HP-41CV or 41C calculators solves basic vapor-liquid equilibrium problems, including figuring the dewpoint, bubblepoint, and equilibrium flash. The algorithm uses W.C. Edmister's method for predicting ideal-solution K values.

  5. Enhanced Vapor-Phase Diffusion in Porous Media - LDRD Final Report

    SciTech Connect (OSTI)

    Ho, C.K.; Webb, S.W.

    1999-01-01T23:59:59.000Z

    As part of the Laboratory-Directed Research and Development (LDRD) Program at Sandia National Laboratories, an investigation into the existence of enhanced vapor-phase diffusion (EVD) in porous media has been conducted. A thorough literature review was initially performed across multiple disciplines (soil science and engineering), and based on this review, the existence of EVD was found to be questionable. As a result, modeling and experiments were initiated to investigate the existence of EVD. In this LDRD, the first mechanistic model of EVD was developed which demonstrated the mechanisms responsible for EVD. The first direct measurements of EVD have also been conducted at multiple scales. Measurements have been made at the pore scale, in a two- dimensional network as represented by a fracture aperture, and in a porous medium. Significant enhancement of vapor-phase transport relative to Fickian diffusion was measured in all cases. The modeling and experimental results provide additional mechanisms for EVD beyond those presented by the generally accepted model of Philip and deVries (1957), which required a thermal gradient for EVD to exist. Modeling and experimental results show significant enhancement under isothermal conditions. Application of EVD to vapor transport in the near-surface vadose zone show a significant variation between no enhancement, the model of Philip and deVries, and the present results. Based on this information, the model of Philip and deVries may need to be modified, and additional studies are recommended.

  6. Effects of capillarity and vapor adsorption in the depletion of vapor-dominated geothermal reservoirs

    SciTech Connect (OSTI)

    Pruess, Karsten; O'Sullivan, Michael

    1992-01-01T23:59:59.000Z

    Vapor-dominated geothermal reservoirs in natural (undisturbed) conditions contain water as both vapor and liquid phases. The most compelling evidence for the presence of distributed liquid water is the observation that vapor pressures in these systems are close to saturated vapor pressure for measured reservoir temperatures (White et al., 1971; Truesdell and White, 1973). Analysis of natural heat flow conditions provides additional, indirect evidence for the ubiquitous presence of liquid. From an analysis of the heat pipe process (vapor-liquid counterflow) Preuss (1985) inferred that effective vertical permeability to liquid phase in vapor-dominated reservoirs is approximately 10{sup 17} m{sup 2}, for a heat flux of 1 W/m{sup 2}. This value appears to be at the high end of matrix permeabilities of unfractured rocks at The Geysers, suggesting that at least the smaller fractures contribute to liquid permeability. For liquid to be mobile in fractures, the rock matrix must be essentially completely liquid-saturated, because otherwise liquid phase would be sucked from the fractures into the matrix by capillary force. Large water saturation in the matrix, well above the irreducible saturation of perhaps 30%, has been shown to be compatible with production of superheated steam (Pruess and Narasimhan, 1982). In response to fluid production the liquid phase will boil, with heat of vaporization supplied by the reservoir rocks. As reservoir temperatures decline reservoir pressures will decline also. For depletion of ''bulk'' liquid, the pressure would decline along the saturated vapor pressure curve, while for liquid held by capillary and adsorptive forces inside porous media, an additional decline will arise from ''vapor pressure lowering''. Capillary pressure and vapor adsorption effects, and associated vapor pressure lowering phenomena, have received considerable attention in the geothermal literature, and also in studies related to geologic disposal of heat generating nuclear wastes, and in the drying of porous materials. Geothermally oriented studies were presented by Chicoine et al. (1977), Hsieh and Ramey (1978, 1981), Herkelrath et al. (1983), and Nghiem and Ramey (1991). Nuclear waste-related work includes papers by Herkelrath and O'Neal (1985), Pollock (1986), Eaton and Bixler (1987), Pruess et al. (1990), Nitao (1990), and Doughty and E'ruess (1991). Applications to industrial drying of porous materials have been discussed by Hamiathy (1969) arid Whitaker (1977). This paper is primarily concerned with evaluating the impact of vapor pressure lowering (VPL) effects on the depletion behavior of vapor-dominated reservoirs. We have examined experimental data on vapor adsorption and capillary pressures in an effort to identify constitutive relationships that would be applicable to the tight matrix rocks of vapor-dominated systems. Numerical simulations have been performed to evaluate the impact of these effects on the depletion of vapor-dominated reservoirs.

  7. Development of hybrid organic-inorganic light emitting diodes using conducting polymers deposited by oxidative chemical vapor deposition process

    E-Print Network [OSTI]

    Chelawat, Hitesh

    2010-01-01T23:59:59.000Z

    Difficulties with traditional methods of synthesis and film formation for conducting polymers, many of which are insoluble, motivate the development of CVD methods. Indeed, conjugated polymers with rigid linear backbones ...

  8. Ash deposit workshop: Class outline

    SciTech Connect (OSTI)

    Hatt, R. [Commercial Testing & Engineering Co., Lexington, KY (United States)

    1996-12-31T23:59:59.000Z

    Ash deposits formed from the combustion of coal and other fuels have plagued the steam production industry from the start. The ash fusion test has been around for over eighty years. As steam plant size increased, so have the problems associated with ash deposits. This workshop is designed to cover: (1) The basic types of deposits. (2) Causes of deposits. (3) Analytical procedures for resolving, or at least providing information about deposits and fuels, and (4) Deposit removal and reduction techniques.

  9. Water, Vapor, and Salt Dynamics in a Hot Repository

    SciTech Connect (OSTI)

    Bahrami, Davood; Danko, George [Department of Mining Engineering, University of Nevada, Reno, 1664 N. Virginia St., Reno, NV, 89557 (United States); Walton, John [Department of Civil Engineering, University of Texas at El Paso, 500 W. University, El Paso, TX, 79968 (United States)

    2007-07-01T23:59:59.000Z

    The purpose of this paper is to report the results of a new model study examining the high temperature nuclear waste disposal concept at Yucca Mountain using MULTIFLUX, an integrated in-drift- and mountain-scale thermal-hydrologic model. The results show that a large amount of vapor flow into the drift is expected during the period of above-boiling temperatures. This phenomenon makes the emplacement drift a water/moisture attractor during the above-boiling temperature operation. The evaporation of the percolation water into the drift gives rise to salt accumulation in the rock wall, especially in the crown of the drift for about 1500 years in the example. The deposited salts over the drift footprint, almost entirely present in the fractures, may enter the drift either by rock fall or by water drippage. During the high temperature operation mode, the barometric pressure variation creates fluctuating relative humidity in the emplacement drift with a time period of approximately 10 days. Potentially wet and dry conditions and condensation on salt-laden drift wall sections may adversely affect the storage environment. Salt accumulations during the above-boiling temperature operation must be sufficiently addressed to fully understand the waste package environment during the thermal period. Until the questions are resolved, a below-boiling repository design is favored where the Alloy-22 will be less susceptible to localized corrosion. (authors)

  10. Improved measurement of crude oil vapor pressure via PVT study methods

    SciTech Connect (OSTI)

    Roehner, R. [Alyeska Pipeline Service Co., Anchorage, AK (United States); Wetzel, G.; Stonestreet, W.; Lievios, J.; Reed, D.

    1996-12-31T23:59:59.000Z

    A technical task force created by owner companies of the Trans-Alaska Pipeline System (TAPS) including BP Pipelines (Alaska), and Arco Transportation Alaska, Inc., and Alyeska Pipeline Service Company (APSC), the operator of TAPS, have investigated new technology for measuring the saturated liquid bubble point vapor pressure (BPVP) of crude oils. This technology is based on Pressure-Volume-Temperature (PVT) Cell study methods and consists of an on-line Vapor Pressure Analyzer (VPA) developed by Arco Oil & Gas Company and marketed by Fluid Data (TVP-1000), and a mercury-free automated PVT lab system (RUSKA 2370 Lab System) marketed by Ruska Instrument Corporation and modified to meet APSC requirements. In this methodology, the BPVP for the multicomponent fluid crude oil is defined and approximated by the intersection of the liquid compressibility and two phase lines on the isothermal pressure-volume (PV) curve for the fluid. The Task Force finds that this new technology provides saturated liquid bubble point vapor pressure values of TAPS crude oils which differ by 15 to 95 kPa from True Vapor Pressure (TVP) values obtained using API Publication 2517, Figure 18B-Equation for of Crude Oils With A Reid Vapor Pressure of 2-15 Pounds per Square Inch and corresponding RVP data from the crude oils tested. The range in difference between the BPVP and the TVP for each of five different TAPS crude oils tested was found to be due to differences in crude oil composition. 3 refs., 1 fig., 1 tab.

  11. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, Earl R. (Livermore, CA); Alger, Terry W. (Tracy, CA)

    1995-01-01T23:59:59.000Z

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube.

  12. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, E.R.; Alger, T.W.

    1995-03-07T23:59:59.000Z

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube. 5 figs.

  13. Industrial Heat Pumps Using Solid/Vapor Working Fluids

    E-Print Network [OSTI]

    Rockenfeller, U.

    with vapor re-compression recovery systems. The state-of-the-art heat pump equipment employing liquid/vapor working fluids fulfills the requirements only in some applications. The employment of solid/vapor complex compounds leads to 'nore cost effective... allows for firing temperatures much higher than possible with liquid/vapor systems. The high energy density per unit mass and the independence of the vapor pressure from the refrigerant concentration (p = f (T), p "# f( x)) over a wide range leads...

  14. Oxide vapor distribution from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R.; Tassano, P.L.; Tsujimoto, N.

    1995-03-01T23:59:59.000Z

    Oxide vapor distributions have been determined as a function of operating parameters of a high frequency sweep e-beam source combined with a programmable sweep controller. We will show which parameters are significant, the parameters that yield the broadest oxide deposition distribution, and the procedure used to arrive at these conclusions. A design-of-experimental strategy was used with five operating parameters: evaporation rate, sweep speed, sweep pattern (pre-programmed), phase speed (azimuthal rotation of the pattern), profile (dwell time as a function of radial position). A design was chosen that would show which of the parameters and parameter pairs have a statistically significant effect on the vapor distribution. Witness flats were placed symmetrically across a 25 inches diameter platen. The stationary platen was centered 24 inches above the e-gun crucible. An oxide material was evaporated under 27 different conditions. Thickness measurements were made with a stylus profilometer. The information will enable users of the high frequency e-gun systems to optimally locate the source in a vacuum system and understand which parameters have a major effect on the vapor distribution.

  15. Precision micro drilling with copper vapor lasers

    SciTech Connect (OSTI)

    Chang, J.J.; Martinez, M.W.; Warner, B.E.; Dragon, E.P.; Huete, G.; Solarski, M.E.

    1994-09-02T23:59:59.000Z

    The authors have developed a copper vapor laser based micro machining system using advanced beam quality control and precision wavefront tilting technologies. Micro drilling has been demonstrated through percussion drilling and trepanning using this system. With a 30 W copper vapor laser running at multi-kHz pulse repetition frequency, straight parallel holes with size varying from 500 microns to less than 25 microns and with aspect ratio up to 1:40 have been consistently drilled on a variety of metals with good quality. For precision trepanned holes, the hole-to-hole size variation is typically within 1% of its diameter. Hole entrance and exit are both well defined with dimension error less than a few microns. Materialography of sectioned holes shows little (sub-micron scale) recast layer and heat affected zone with surface roughness within 1--2 microns.

  16. Atomic vapor spectroscopy in integrated photonic structures

    E-Print Network [OSTI]

    Ritter, Ralf; Pernice, Wolfram; Kübler, Harald; Pfau, Tilman; Löw, Robert

    2015-01-01T23:59:59.000Z

    We investigate an integrated optical chip immersed in atomic vapor providing several waveguide geometries for spectroscopy applications. The narrow-band transmission through a silicon nitride waveguide and interferometer is altered when the guided light is coupled to a vapor of rubidium atoms via the evanescent tail of the waveguide mode. We use grating couplers to couple between the waveguide mode and the radiating wave, which allow for addressing arbitrary coupling positions on the chip surface. The evanescent atom-light interaction can be numerically simulated and shows excellent agreement with our experimental data. This work demonstrates a next step towards miniaturization and integration of alkali atom spectroscopy and provides a platform for further fundamental studies of complex waveguide structures.

  17. Solid-Vapor Sorption Refrigeration Systems

    E-Print Network [OSTI]

    Graebel, W.; Rockenfeller, U.; Kirol, L.

    SOLID-VAPOR SORPTION REFRIGERATION SYSTEMS DR. WILLIAM GRAEBEL DR. UWE ROCKENFELLER MR. LANCE KIROL Engineer President Chief Engineer Rocky Research Rocky Research Rocky Research Boulder city, NV Boulder city, NV Boulder City, NV Abstract... Complex compound sorption reactions are ideally suited for use in refrigeration cycles as an economically viable alternative to CFC refrigerants. Complex compound refrigeration provides a number of energy-saving advantages over present refrigeration...

  18. DuPont Chemical Vapor Technical Report

    SciTech Connect (OSTI)

    MOORE, T.L.

    2003-10-03T23:59:59.000Z

    DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH&Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations.

  19. Combined rankine and vapor compression cycles

    DOE Patents [OSTI]

    Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

    2005-04-19T23:59:59.000Z

    An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

  20. High volume fuel vapor release valve

    SciTech Connect (OSTI)

    Gimby, D.R.

    1991-09-03T23:59:59.000Z

    This patent describes a fuel vapor release valve for use in a vehicle fuel system. It comprises a valve housing 10 placed in a specific longitudinal orientation, the valve housing 10 defining an interior cavity 22 having an inlet 20 for admitting fuel vapor and an outlet 14 for discharging such fuel vapor; a valve member 24 positioned in the cavity 22 for movement between an outlet 14 opening position and an outlet 14 closing position, the valve member 24 including a cap member 34 having a seat surface 36 for mating with the outlet 14 and an orifice 42 extending through the cap member 34 providing a passageway from the outlet 14 to the cavity 22, the orifice 42 extending through the cap member 34 providing a passageway from the outlet 14 to the cavity 22, the orifice 42 having a lesser radius than the outlet 14; the valve member 24 further including a plug member 30 engaged with the cap member 34 for movement between an orifice 42 opening position and an orifice 42 closing position; and, a valve housing tilt responsive means for moving the valve member 24 to an outlet 14 and orifice 42 closing position in response to tilting of the valve 10 about its longitudinal axis whereby, upon the return of the valve 10 to its specified longitudinal orientation, the plug member 30 first moves to an orifice 42 opening position and the cap member 34 subsequently moves to an outlet 14 opening position.

  1. Model for assessing bronchial mucus transport

    SciTech Connect (OSTI)

    Agnew, J.E.; Bateman, J.R.M.; Pavia, D.; Clarke, S.W.

    1984-02-01T23:59:59.000Z

    The authors propose a scheme for the assessment of regional mucus transport using inhaled Tc-99m aerosol particles and quantitative analysis of serial gamma-camera images. The model treats input to inner and intermediate lung regions as the total of initial deposition there plus subsequent transport into these regions from more peripheral airways. It allows for interregional differences in the proportion of particles deposited on the mucus-bearing conducting airways, and does not require a gamma image 24 hr after particle inhalation. Instead, distribution of particles reaching the respiratory bronchioles or alveoli is determined from a Kr-81m ventilation image, while the total amount of such deposition is obtained from 24-hr Tc-99m retention measured with a sensitive counter system. The model is applicable to transport by mucociliary action or by cough, and has been tested in ten normal and ten asthmatic subjects.

  2. Hydraulic fracturing slurry transport in horizontal pipes

    SciTech Connect (OSTI)

    Shah, S.N.; Lord, D.L. (Halliburton Services (US))

    1990-09-01T23:59:59.000Z

    Horizontal-well activity has increased throughout the industry in the past few years. To design a successful hydraulic fracturing treatment for horizontal wells, accurate information on the transport properties of slurry in horizontal pipe is required. Limited information exists that can be used to estimate critical deposition and resuspension velocities when proppants are transported in horizontal wells with non-Newtonian fracturing gels. This paper presents a study of transport properties of various hydraulic fracturing slurries in horizontal pipes. Flow data are gathered in three transparent horizontal pipes with different diameters. Linear and crosslinked fracturing gels were studied, and the effects of variables--e.g., pipe size; polymer-gelling-agent concentration; fluid rheological properties; crosslinking effects; proppant size, density, and concentrations; fluid density; and slurry pump rate--on critical deposition and resuspension velocities were investigated. Also, equations to estimate the critical deposition and resuspension velocities of fracturing gels are provided.

  3. Computational Transportation

    E-Print Network [OSTI]

    Illinois at Chicago, University of

    ), in-vehicle computers, and computers in the transportation infrastructure are integrated ride- sharing, real-time multi-modal routing and navigation, to autonomous/assisted driving

  4. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

    SciTech Connect (OSTI)

    Wanlass, Mark (Golden, CO)

    1987-01-01T23:59:59.000Z

    A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

  5. Oxidative chemical vapor deposition of semiconducting polymers and their use In organic photovoltaics

    E-Print Network [OSTI]

    Borrelli, David Christopher

    2014-01-01T23:59:59.000Z

    Organic photovoltaics (OPVs) have received significant interest for their potential low cost, high mechanical flexibility, and unique functionalities. OPVs employing semiconducting polymers in the photoactive layer have ...

  6. Prevention of biofouling in seawater desalination via initiated chemical vapor deposition (iCVD)

    E-Print Network [OSTI]

    Yang, Rong, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    Biofouling, the undesirable settlement and growth of organisms, occurs immediately when a clean surface is immersed in natural seawater. It is a universal problem and the bottleneck for seawater desalination, which reduces ...

  7. Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

    E-Print Network [OSTI]

    that is typically encountered in applications involving microelectromechanical systems (MEMS.016212 PACS number(s): 05.45.-a, 85.85.+j, 62.25.-g, 47.52.+j I. INTRODUCTION Microelectromechanical systems

  8. Low Temperature Chemical Vapor Deposition of Zirconium Nitride in a Fluidized Bed

    E-Print Network [OSTI]

    Arrieta, Marie

    2012-10-19T23:59:59.000Z

    thick) on uranium-molybdenum (UMo) particulate fuel. Plate-type fuel with U-xMo (x = 3 to 10 wt.%) particle fuel dispersed in an aluminum matrix is under development at Idaho National Laboratory (INL) for the Reduced Enrichment for Research and Test...

  9. Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications

    E-Print Network [OSTI]

    Tsai, Tsung-Chan 1982-

    2012-12-05T23:59:59.000Z

    air and at low temperature was developed using a helium dielectric barrier discharge jet (DBD jet). It was demonstrated that various materials, such as polymeric, metallic, and composite films, can be readily synthesized through this technique. Second...

  10. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

    DOE Patents [OSTI]

    Wanlass, M.

    1985-02-19T23:59:59.000Z

    A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

  11. Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes

    E-Print Network [OSTI]

    McKee, Gregg Sturdivant Burke

    2008-01-01T23:59:59.000Z

    Solid State Chemistry 177 4394-4398 Lu K. L. , Lago R. M. ,of Solid State Chemistry 177 4394-4398 Coquay P. , De Grave

  12. Chemical vapor deposition and functionalization of fluorocarbon-organosilicon copolymer thin films

    E-Print Network [OSTI]

    Murthy, Shashi Krishna, 1977-

    2003-01-01T23:59:59.000Z

    Neural prostheses are micron-scale integrated circuit devices that are under development for the treatment of brain and spinal cord injuries. A key challenge in the fabrication of these silicon- based devices is the ...

  13. Perfluorooctane Sulfonyl Fluoride as an Initiator in Hot-Filament Chemical Vapor Deposition of Fluorocarbon

    E-Print Network [OSTI]

    Gleason, Karen K.

    of Fluorocarbon Thin Films Hilton G. Pryce Lewis, Jeffrey A. Caulfield, and Karen K. Gleason*, Department pathways available via HFCVD makes it possible to produce polymeric fluorocarbon films spectroscopically

  14. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular

    E-Print Network [OSTI]

    Yang, Peidong

    -free environment at atmospheric pressure. TMG was kept cool in a -10 °C temperature bath. Nitrogen, used a total nitrogen flow rate of 250 sccm. These were supplied via a 4-mm i.d. quartz tube. Hydrogen and ammonia sources were supplied via a 22-mm i.d. outer quartz tube at a total flow rate of 155 sccm

  15. Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis

    E-Print Network [OSTI]

    Gomez Gualdron, Diego Armando 1983-

    2012-10-26T23:59:59.000Z

    For two decades, single-wall carbon nanotubes (SWCNTs) have captured the attention of the research community, and become one of the flagships of nanotechnology. Due to their remarkable electronic and optical properties, SWCNTs are prime candidates...

  16. An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes

    E-Print Network [OSTI]

    Grujicic, Mica

    Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition of the transition-metal particles and onto the surface of carbon nanotubes, carbon atom attachment to the growing. Carbon nanotubes are generally processed by laser ablation of carbon rods e.g. [7], a direct current arc

  17. A conformal nano-adhesive via initiated chemical vapor deposition for microfluidic devices

    E-Print Network [OSTI]

    Doyle, Patrick S.

    (ethylene terephthalate) (PET), polycarbonate (PC), and poly(tetrafluoro ethylene) (PTFE). Introduction Microfluidic consumption of reagents and analytes, low cost of manufacture, low consumption of power, high throughput

  18. In-situ formation of multiphase electron beam physical vapor deposited barrier coatings for turbine components

    DOE Patents [OSTI]

    Subramanian, Ramesh (Oviedo, FL)

    2001-01-01T23:59:59.000Z

    A turbine component (10), such as a turbine blade, is provided which is made of a metal alloy (22) and a base columnar thermal barrier coating (20) on the alloy surface, where a heat resistant ceramic oxide sheath material (32' or 34') covers the columns (28), and the sheath material is the reaction product of a precursor ceramic oxide sheath material and the base thermal barrier coating material.

  19. Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method

    E-Print Network [OSTI]

    of battery electrodes.5,10 These microtubular TiS2 electrodes show higher capacities, lower resistance,19 including electrochemistry.20 The use of metal catalysts such as Ni, Fe, Fe-Cu, and Pt has been, and lower susceptibility to slow electron- transfer kinetics than thin film TiS2 electrodes. In the present

  20. Polymers via chemical vapor deposition and their application to organic photovoltaics

    E-Print Network [OSTI]

    Barr, Miles Clark

    2012-01-01T23:59:59.000Z

    There is emerging interest in the ability to fabricate organic photovoltaics (OPVs) on flexible, lightweight substrates, which could lower the cost of installation and enable new form factors for deployment. However, ...

  1. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30T23:59:59.000Z

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  2. Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis 

    E-Print Network [OSTI]

    Gomez Gualdron, Diego Armando 1983-

    2012-10-26T23:59:59.000Z

    for the creation of novel and revolutionary electronic, medical, and energy technologies. However, a major stumbling block in the exploitation of nanotube-based technologies is the lack of control of nanotube structure (chirality) during synthesis, which...

  3. Desktop systems for manufacturing carbon nanotube films by chemical vapor deposition

    E-Print Network [OSTI]

    Kuhn, David S. (David Scott)

    2007-01-01T23:59:59.000Z

    Carbon nanotubes (CNTs) exhibit exceptional electrical, thermal, and mechanical properties that could potentially transform such diverse fields as composites, electronics, cooling, energy storage, and biological sensing. ...

  4. Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    , Cambridge CB2 1EW, United Kingdom R. E. Dunin-Borkowski Department of Materials Science and Metallurgy to low-dimensional physics, and they can be used as nanotechnology building blocks to reach higher device-temperature synthesis from its phase diagram, because the Ga­Si system has a very low eutectic temperature.16 However

  5. A dual-laser interferometry system for thin film measurements in thermal vapor deposition applications

    E-Print Network [OSTI]

    Yin, Allen Shiping

    2012-01-01T23:59:59.000Z

    Lithography processes harnessing the phase change of the chemically inert carbon dioxide as a resist have been shown as a possible alternative to patterning thin film organic semiconductors and metals. The ability to control ...

  6. In-situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    E-Print Network [OSTI]

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens; Wagner, Jakob B.; Baehtz, Carsten; Weatherup, Robert S.; Schlögl, Robert; Bayer, Bernhard C.; Hofmann, Stephan

    2014-10-20T23:59:59.000Z

    during h-BN CVD process. For experiments with air pre-dosing the dosing was performed post H2 annealing i.e. in between step 2 and step 3 in Figure 1. The ISISS end station of FHI MPG at the BESSY II synchrotron was used for In-situ XPS measurements...

  7. Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes

    E-Print Network [OSTI]

    McKee, Gregg Sturdivant Burke

    2008-01-01T23:59:59.000Z

    60 2.3.1.3 Unaligned Ceramic Matrix10 wt%. 2.3.1.3 Unaligned Ceramic Matrix Composites Ceramic-ceramic with approximate composition of 55% fluorophlogopite mica in a borosilicate glass matrix,

  8. Oxidative and initiated chemical vapor deposition for application to organic electronics

    E-Print Network [OSTI]

    Im, Sung Gap

    2009-01-01T23:59:59.000Z

    Since the first discovery of polymeric conductors in 1977, the research area of "organic electronics" has grown dramatically. However, methods for forming thin films comprised solely of conductive polymers are limited by ...

  9. Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

    E-Print Network [OSTI]

    Keast, Craig L.

    Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and ...

  10. Researchers develop electrodeposition process to deposit coatings on substrates, eliminate the expensive physical vapor

    E-Print Network [OSTI]

    (CRADA) between NREL and DASS TECH Co., Ltd. of South Korea. Technical Contact: Raghu N. Bhattacharya

  11. Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications

    E-Print Network [OSTI]

    Lock, John P

    2005-01-01T23:59:59.000Z

    (cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

  12. Lithium manganese oxide films fabricated by electron beam directed vapor deposition

    E-Print Network [OSTI]

    Wadley, Haydn

    material for high energy den- sity battery applications.7,8 Lithium­transition metal oxide films can.2. After annealing in air at 700 °C, thin films grown with a low jet speed had a cubic spinel structure Li/Li-ion batteries. © 2008 American Vacuum Society. DOI: 10.1116/1.2823488 I. INTRODUCTION Thin film

  13. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

    2008-08-05T23:59:59.000Z

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  14. Optical characterization of InN layers grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Nabben, Reinhard

    and optical properties of InN films grown on sapphire and GaN/sapphire templates. Results obtained from Raman analyzed in this contribution were grown on GaN/sapphire and sapphire 0001 substrates by HPCVD, utilizing to optical absorption edge estimates obtained from optical transmission spectra analysis. The analysis shows

  15. Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition

    E-Print Network [OSTI]

    at a very rapid and constant rate 100 nm/s that decreases sharply after the catalyst Co particles become. Experi- ments performed, mostly on individual nanotubes, show that they have extraordinary electrical conditions such as substrate, catalyst, feed gas, and temperature, the growth model proposed by several

  16. Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air

    E-Print Network [OSTI]

    Chen, Junhong

    on the high voltage wire. The wire is 100 mm radius tungsten and the wire- to-plate spacing is 1.5 cm parameters and electrode geometry on the production of ozone.(1­8) Recently, the authors developed a fundamental model of the energy distribution of electrons(9,10) and production and distribution of ozone

  17. System and Method for Sealing a Vapor Deposition Source - Energy Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposed Action(Insert DirectiveSynthetic

  18. Simulation of filtration for suspension transport in porous media

    E-Print Network [OSTI]

    Kim, Yun Sung, 1974-

    2005-01-01T23:59:59.000Z

    This thesis describes the development and application of a novel method for analyzing the filtration of particles transported through a granular porous medium. The proposed analysis considers the deposition of particles ...

  19. Evaluation of the atmospheric deposition of toxic contaminants to Puget Sound, appendices

    SciTech Connect (OSTI)

    Not Available

    1991-08-01T23:59:59.000Z

    The document contains the appendices for the report 'Evaluation of the Atmospheric Deposition of Toxic Contaminants to Puget Sound', (PB93-122208). Contents include Literature Survey; Meteorological Data; Laboratory Results - Six-Month Aerosol and Deposition Study; Emission Inventory; Laboratory Results--18-Day Receptor Modeling Field Study; Diffusion/Transport Modeling; Integration of Results; Supporting Documents.

  20. Method and apparatus for concentrating vapors for analysis

    DOE Patents [OSTI]

    Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

    2012-06-05T23:59:59.000Z

    A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

  1. G-Band Vapor Radiometer Profiler (GVRP) Handbook

    SciTech Connect (OSTI)

    Caddeau, MP

    2010-06-23T23:59:59.000Z

    The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

  2. Method for controlling corrosion in thermal vapor injection gases

    DOE Patents [OSTI]

    Sperry, John S. (Houston, TX); Krajicek, Richard W. (Houston, TX)

    1981-01-01T23:59:59.000Z

    An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

  3. Heat Recovery in Distillation by Mechanical Vapor Recompression

    E-Print Network [OSTI]

    Becker, F. E.; Zakak, A. I.

    tower energy requirements can be achieved by mechanical vapor recompression. Three design approaches for heating a distillation tower reboiler by mechanical vapor recompression are presented. The advantages of using a screw compressor are discussed... for lowering energy consumption in the distillation process through various heat recovery techniques. (3-8) One such technique utilizes mechanical vapor recompression. (9-12) The principle of this ap proach involves the use of a compressor to recycle...

  4. Recovery of benzene in an organic vapor monitor

    E-Print Network [OSTI]

    Krenek, Gregory Joel

    1980-01-01T23:59:59.000Z

    solid adsorbents available (silica gel, activated alumina, etc. ), activated charcoal is most frequently utilized. Activated charcoal has retentivity for sorbed vapors several times that of silica gel and it displays a selectivity for organic vapors... (diffusion rate) of the vapor molecules to the sur- face of the adsorbent. The adsorption process determine how effective the adsorbent collects and holds the contam- inant on the surface of the activated charcoal. Recovery of the contaminant from...

  5. Review of enhanced vapor diffusion in porous media

    SciTech Connect (OSTI)

    Webb, S.W.; Ho, C.K.

    1998-08-01T23:59:59.000Z

    Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

  6. Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions

    E-Print Network [OSTI]

    Kirol, L.

    ADVANCED CHEMICAL HEAT PUMPS USING LIQUID-VAPOR REACTIONS LANCE KIROL Senior Program Specialist Idaho National Engineering Laboratory Idaho Falls, Idaho . ABSTRACT Chemical heat pumps utilizing liquid-vapor reactions can be configured... in forms analogous to electric drive vapor-compression heat pumps and heat activated absorption heat pumps. Basic thermodynamic considerations eliminate some heat pumps and place restrictive working fluid requirements on others, but two thermodynam...

  7. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, J.M.; Wylie, A.H.

    1996-01-09T23:59:59.000Z

    A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

  8. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

    1996-01-01T23:59:59.000Z

    A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

  9. Copper vapor laser acoustic thermometry system

    DOE Patents [OSTI]

    Galkowski, Joseph J. (Livermore, CA)

    1987-01-01T23:59:59.000Z

    A copper vapor laser (CVL) acoustic thermometry system is disclosed. The invention couples an acoustic pulse a predetermined distance into a laser tube by means of a transducer and an alumina rod such that an echo pulse is returned along the alumina rod to the point of entry. The time differential between the point of entry of the acoustic pulse into the laser tube and the exit of the echo pulse is related to the temperature at the predetermined distance within the laser tube. This information is processed and can provide an accurate indication of the average temperature within the laser tube.

  10. Vapor Retarder Classification - Building America Top Innovation |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartmentDepartment of Energy Photo of a vapor retarder

  11. Category:Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here. Category:Conceptual ModelLists forMercury Vapor page? For detailed

  12. acetone vapor sensing: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    XI, Universit de 7 ATMOSPHERIC WATER VAPOR PROFILES DERIVED FROM REMOTE-SENSING RADIOMETER MEASUREMENTS CiteSeer Summary: The feasibility and preliminary testing of a low...

  13. Rotary Vapor Compression Cycle Technology: A Pathway to Ultra...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cycle Technology: A Pathway to Ultra-Efficient Air Conditioning, Heating and Refrigeration Rotary Vapor Compression Cycle Technology: A Pathway to Ultra-Efficient Air...

  14. alkali vapor species: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of hexagonal patterns in a nonlinear optical system: Alkali metal vapor in a single-mirror arrangement Physics Websites Summary: Secondary bifurcations of hexagonal patterns in...

  15. alkali atom vapor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    low power requirements, these "chip-scale" atomic Popovic, Zoya 3 Hybrid Optical Pumping of Optically Dense Alkali-Metal Vapor without Quenching Gas M. V. Romalis Physics...

  16. A new vapor pressure equation originating at the critical point

    E-Print Network [OSTI]

    Nuckols, James William

    1976-01-01T23:59:59.000Z

    - tence curve has been developed from critical scaling theory. The agreement between published vapor pressures and vapor pressures predicted by this equation is very good, especially in the critical region where many other vapor pressure equations fail... vapor pressure data f' or Ar, N2, 02H6, and H20, w1th the parameters ai to a being determined by an unweighted least squares curve 5 fit. The method of least squares has been described adequately elsewhere, e. g. Wylie (1966), and the theory w111...

  17. atmospheric water vapor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    greenhouse gas, contributing to approximately two-thirds of the Earth's greenhouse effect Mitchell, 1989; IntergovernmentalA meta-analysis of water vapor...

  18. Hypothetical Thermodynamic Properties. Subcooled Vaporization Enthalpies and Vapor Pressures of Polyaromatic Hydrocarbons

    E-Print Network [OSTI]

    Chickos, James S.

    of Polyaromatic Hydrocarbons William Hanshaw, Marjorie Nutt, and James S. Chickos* Department of Chemistry and liquid vapor pressures from T ) 298.15 K to T ) 510 K of a series of polyaromatic hydrocarbons have been protocols are also made, and agreement generally is quite good. Introduction Polyaromatic hydrocarbons (PAHs

  19. M. Bahrami ENSC 461 (S 11) Vapor Power Cycles 1 Vapor Power Cycles

    E-Print Network [OSTI]

    Bahrami, Majid

    is not a suitable model for steam power cycle since: The turbine has to handle steam with low quality which will cause erosion and wear in turbine blades. It is impractical to design a compressor that handles two vapor expands isentropically in turbine and produces work. 4-1: Const P heat rejection High quality

  20. Transportation Market Distortions

    E-Print Network [OSTI]

    Litman, Todd

    2006-01-01T23:59:59.000Z

    of Highways, Volpe National Transportation Systems Center (Evaluating Criticism of Transportation Costing, VictoriaFrom Here: Evaluating Transportation Diversity, Victoria