National Library of Energy BETA

Sample records for vapor phase epitaxy

  1. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  2. Growth of vertical-cavity surface emitting lasers by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Hou, H.Q.; Hammons, B.E.; Crawford, M.H.; Lear, K.L.; Choquette, K.D.

    1996-10-01

    We present growth and characterization of visible and near-infrared vertical-cavity surface emitting lasers (VCSELs) grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include growth rate and composition control using an {ital in}{ital situ} normal-incidence reflectometer, comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire composition range, and optimization of ultra-high material uniformity. We also demonstrate our recent achievements of all-AlGaAs VCSELs which include the first room-temperature continuous- wave demonstration of 700-nm red VCSELs and high-efficiency and low- threshold voltage 850-nm VCSELs.

  3. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzn, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}0.24?eV), D3 (E{sub C}0.60?eV), D4 (E{sub C}0.69?eV), D5 (E{sub C}0.96?eV), D7 (E{sub C}1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1??10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}0.12?eV), D5I (E{sub C}0.89?eV), and D6 (E{sub C}1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  4. Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy

    DOE Patents [OSTI]

    Hou, Hong Q.; Coltrin, Michael E.; Choquette, Kent D.

    2001-01-01

    A process for forming an array of vertical cavity optical resonant structures wherein the structures in the array have different detection or emission wavelengths. The process uses selective area growth (SAG) in conjunction with annular masks of differing dimensions to control the thickness and chemical composition of the materials in the optical cavities in conjunction with a metalorganic vapor phase epitaxy (MOVPE) process to build these arrays.

  5. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  6. Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

    SciTech Connect (OSTI)

    Nakano, Yoshitaka Ogawa, Daisuke; Nakamura, Keiji; Kawakami, Retsuo; Niibe, Masahito

    2015-07-15

    The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.

  7. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  8. Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Perl, Emmett E.; Simon, John; Geisz, John F.; Olavarria, Waldo; Young, Michelle; Duda, Anna; Friedman, Daniel J.; Steiner, Myles A.

    2016-03-29

    AlGaInP solar cells with bandgaps between 1.9 and 2.2 eV are investigated for use in next-generation multijunction photovoltaic devices. This quaternary alloy is of great importance to the development of III-V solar cells with five or more junctions and for cells optimized for operation at elevated temperatures because of the high bandgaps required in these designs. In this work, we explore the conditions for the organometallic vapor-phase epitaxy growth of AlGaInP and study their effects on cell performance. Initial efforts focused on developing ~2.0-eV AlGaInP solar cells with a nominal aluminum composition of 12%. Under the direct spectrum at 1000more » W/m2 (AM1.5D), the best of these samples had an open-circuit voltage of 1.59 V, a bandgap-voltage offset of 440 mV, a fill factor of 88.0%, and an efficiency of 14.8%. We then varied the aluminum composition of the alloy from 0% to 24% and were able to tune the bandgap of the AlGaInP layers from ~1.9 to ~2.2 eV. Furthermore, while the samples with a higher aluminum composition exhibited a reduced quantum efficiency and increased bandgap-voltage offset, the bandgap-voltage offset remained at 500 mV or less, up to a bandgap of ~2.1 eV.« less

  9. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  10. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As{sub 1−x}Bi{sub x})/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

    SciTech Connect (OSTI)

    Wood, A. W.; Babcock, S. E.; Guan, Y.; Forghani, K.; Anand, A.; Kuech, T. F.

    2015-03-01

    A set of GaAs{sub 1−x}Bi{sub x}/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growing discrete and compositionally uniform GaAs{sub 1−x}Bi{sub x} well and GaAs barrier layers in the epitaxial films. High-resolution high-angle annular-dark-field (or “Z-contrast”) scanning transmission electron microscopy imaging revealed concentration profiles that were periodic in the growth direction, but far more complicated in shape than the intended square wave. The observed composition profiles could explain various reports of physical properties measurements that suggest compositional inhomogeneity in GaAs{sub 1−x}Bi{sub x} alloys as they currently are grown.

  11. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect (OSTI)

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  12. Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Thiesen, J.; Iwaniczko, E.; Jones, K.M.; Mahan, A.; Crandall, R.

    1999-08-01

    We demonstrate epitaxial silicon growth of 8 {Angstrom}/s at temperatures as low as 195&hthinsp;{degree}C, using hot-wire chemical vapor deposition. Characterization by transmission electron microscopy shows epitaxial layers of Si. We briefly discuss various aspects of the process parameter space. Finally, we consider differences in the chemical kinetics of this process when compared to other epitaxial deposition techniques. {copyright} {ital 1999 American Institute of Physics.}

  13. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K.

    1991-01-01

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  14. Epitaxial stabilization and phase instability of VO2 polymorphs...

    Office of Scientific and Technical Information (OSTI)

    Epitaxial stabilization and phase instability of VO2 polymorphs Citation ... OSTI Identifier: 1259840 Type: Accepted Manuscript Journal Name: Scientific Reports Additional Journal ...

  15. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  16. Mechanistic aspects of vapor phase lubrication of silicon. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Mechanistic aspects of vapor phase lubrication of silicon. Citation Details In-Document Search Title: Mechanistic aspects of vapor phase lubrication of silicon. No abstract ...

  17. Hot-Wire Chemical Vapor Deposition (HWCVD) technologies: Rapid, controllable growth of epitaxial silicon films

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2013-12-27

    NREL scientists have discovered a unique way to quickly grow epitaxial Si using hot-wire chemical vapor deposition (HWCVD), which holds the potential to greatly decrease costs within the manufacturing of Si substrates.  With NREL’s HWCVD technology, Si material use and costs are dramatically reduced with scalable manufacturing and lower deposition temperatures.  NREL’s unique HWCVD technique can easily be integrated into existing manufacturing processes, allowing...

  18. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  19. Growth of homo-epitaxial silicon at low temperatures using hot wire chemical vapor deposition

    SciTech Connect (OSTI)

    Thiesen, J.; Jones, K.M.; Matson, R.; Reedy, R.; Crandall, R.; Iwaniczko, E.; Mahan, H.

    1999-12-13

    The authors report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields device-quality epitaxial Si at the comparatively low temperatures of 195 to 450 C, and relatively high growth rates of 3 to 20 {angstrom}/sec. Layers up to 4,500-{angstrom} thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 5 x 104/cm{sup 2}. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of the current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.

  20. Liquid-phase compositions from vapor-phase analyses

    SciTech Connect (OSTI)

    Davis, W. Jr. ); Cochran, H.D. )

    1990-02-01

    Arsenic normally is not considered to be a contaminant. However, because arsenic was found in many cylinders of UF{sub 6}, including in corrosion products, a study was performed of the distribution of the two arsenic fluorides, AsF{sub 3} and AsF{sub 5}, between liquid and vapor phases. The results of the study pertain to condensation or vaporization of liquid UF{sub 6}. This study includes use of various experimental data plus many extrapolations necessitated by the meagerness of the experimental data. The results of this study provide additional support for the vapor-liquid equilibrium model of J.M. Prausnitz and his coworkers as a means of describing the distribution of various impurities between vapor and liquid phases of UF{sub 6}. Thus, it is concluded that AsF{sub 3} will tend to concentrate in the liquid phase but that the concentration of AsF{sub 5} in the vapor phase will exceed its liquid-phase concentration by a factor of about 7.5, which is in agreement with experimental data. Because the weight of the liquid phase in a condensation operation may be in the range of thousands of times that of the vapor phase, most of any AsF{sub 5} will be in the liquid phase in spite of this separation factor of 7.5. It may also be concluded that any arsenic fluorides fed into a uranium isotope separation plant will either travel with other low-molecular-weight gases or react with materials present in the plant. 25 refs., 3 figs., 6 tabs.

  1. Epitaxial stabilization and phase instability of VO2 polymorphs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-20

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. Bymore » investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.« less

  2. Epitaxial stabilization and phase instability of VO2 polymorphs...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Epitaxial ... Here, we report epitaxial stabilization of the VO2 ... Type: Accepted Manuscript Journal Name: Scientific Reports ...

  3. Monitoring of vapor phase polycyclic aromatic hydrocarbons

    DOE Patents [OSTI]

    Vo-Dinh, Tuan; Hajaligol, Mohammad R.

    2004-06-01

    An apparatus for monitoring vapor phase polycyclic aromatic hydrocarbons in a high-temperature environment has an excitation source producing electromagnetic radiation, an optical path having an optical probe optically communicating the electromagnetic radiation received at a proximal end to a distal end, a spectrometer or polychromator, a detector, and a positioner coupled to the first optical path. The positioner can slidably move the distal end of the optical probe to maintain the distal end position with respect to an area of a material undergoing combustion. The emitted wavelength can be directed to a detector in a single optical probe 180.degree. backscattered configuration, in a dual optical probe 180.degree. backscattered configuration or in a dual optical probe 90.degree. side scattered configuration. The apparatus can be used to monitor an emitted wavelength of energy from a polycyclic aromatic hydrocarbon as it fluoresces in a high temperature environment.

  4. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOE Patents [OSTI]

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  5. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy...

    Office of Scientific and Technical Information (OSTI)

    In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography. ... Therefor laser assisted atom probe tomography (APT) was utilized to study the phase ...

  6. Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mg-Cathodes - Joint Center for Energy Storage Research 7, 2015, Research Highlights Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as Mg-Cathodes Using epitaxial thin film methods, two polymorphs of MgMn2O4 (MMO) are stabilized in tetragonal (MMOT) and cubic (MMOC) phases. The MMOT thin film shows negligible activity with no structural changes, while MMOC (normally found at high temperature or high pressure) exhibits reversible Mg2+ activity with associated changes

  7. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect (OSTI)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ?10{sup 17}?cm{sup ?3} to (25)??10{sup 14}?cm{sup ?3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ?5??10{sup 13}?cm{sup ?3} versus 2.9??10{sup 16}?cm{sup ?3} in the standard samples, with a similar decrease in the electron traps concentration.

  8. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  9. A review of porous media enhanced vapor-phase diffusion mechanisms...

    Office of Scientific and Technical Information (OSTI)

    data: Does enhanced vapor-phase diffusion exist? Citation Details In-Document Search Title: A review of porous media enhanced vapor-phase diffusion mechanisms, models, and data: ...

  10. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates anmore » alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

  11. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    SciTech Connect (OSTI)

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.

  12. The use of electron channeling patterns for process optimization of low-temperature epitaxial silicon using hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Matson, R.; Thiesen, J.; Jones, K.M.; Crandall, R.; Iwaniczko, E.; Mahan, H.

    1999-10-25

    The authors demonstrate the first reported use of electron channeling patterns (ECPs) as a response for a statistical design of experiments process-optimization for epitaxial silicon. In an effort to fully characterize the new hot-wire chemical vapor deposition (HWCVD) method of epitaxial growth recently discovered at NREL, a large number of parameters with widely varying values needed to be considered. To accomplish this, they used the statistical design of experiments method. This technique allows one to limit the number of sample points necessary to evaluate a given parameter space. In this work they demonstrate how ECPs can effectively be used to optimize the process space as well as to quickly and economically provide the process engineer with absolutely key information.

  13. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jeen, Hyoung Jeen; Lee, Ho Nyung

    2015-12-18

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5thin films and performed post-annealing at various temperatures for topotacticmore » conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.« less

  14. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  15. Vapor phase elemental sulfur amendment for sequestering mercury in contaminated soil

    SciTech Connect (OSTI)

    Looney, Brian B.; Denham, Miles E.; Jackson, Dennis G.

    2014-07-08

    The process of treating elemental mercury within the soil is provided by introducing into the soil a heated vapor phase of elemental sulfur. As the vapor phase of elemental sulfur cools, sulfur is precipitated within the soil and then reacts with any elemental mercury thereby producing a reaction product that is less hazardous than elemental mercury.

  16. The role of polymer formation during vapor phase lubrication...

    Office of Scientific and Technical Information (OSTI)

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. ... The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that ...

  17. Underwater vapor phase burning of aluminum particles and on aluminum ignition during steam explosions

    SciTech Connect (OSTI)

    Epstein, M. )

    1991-09-01

    Recently reported experimental studies on aluminum-water steam explosions indicate that there may be a critical metal temperature at which the process changes over from a physical explosion to one which is very violent and involves the rapid liberation of chemical energy. In this report we examine the hypothesis that vapor-phase burning of aluminum is a necessary condition for the occurrence of such ignition-type'' steam explosions. An available two-phase stagnation flow film-boiling model is used to calculate the steam flux to the vaporizing aluminum surface. Combining this calculation with the notion that there is an upper limit to the magnitude of the metal vaporization rate at which the reaction regime must change from vapor phase to surface burning, leads to prediction of the critical metal surface temperature below which vapor phase burning is impossible. The critical temperature is predicted for both the aluminum-water pre-mixture configuration in which coarse drops of aluminum are falling freely through water and for the finely-fragmented aluminum drops in the wake of the pressure shock that triggers'' the explosion. Vapor phase burning is predicted to be possible during the pre-mixture phase but not very likely during the trigger phase of a steam explosion. The implications of these findings in terms of the validity of the hypothesis that ignition may begin with the vapor phase burning of aluminum is discussed. Recently postulated, alternative mechanisms of underwater aluminum ignition are also discussed.

  18. Underwater vapor phase burning of aluminum particles and on aluminum ignition during steam explosions

    SciTech Connect (OSTI)

    Epstein, M.

    1991-09-01

    Recently reported experimental studies on aluminum-water steam explosions indicate that there may be a critical metal temperature at which the process changes over from a physical explosion to one which is very violent and involves the rapid liberation of chemical energy. In this report we examine the hypothesis that vapor-phase burning of aluminum is a necessary condition for the occurrence of such ``ignition-type`` steam explosions. An available two-phase stagnation flow film-boiling model is used to calculate the steam flux to the vaporizing aluminum surface. Combining this calculation with the notion that there is an upper limit to the magnitude of the metal vaporization rate at which the reaction regime must change from vapor phase to surface burning, leads to prediction of the critical metal surface temperature below which vapor phase burning is impossible. The critical temperature is predicted for both the aluminum-water pre-mixture configuration in which coarse drops of aluminum are falling freely through water and for the finely-fragmented aluminum drops in the wake of the pressure shock that ``triggers`` the explosion. Vapor phase burning is predicted to be possible during the pre-mixture phase but not very likely during the trigger phase of a steam explosion. The implications of these findings in terms of the validity of the hypothesis that ignition may begin with the vapor phase burning of aluminum is discussed. Recently postulated, alternative mechanisms of underwater aluminum ignition are also discussed.

  19. Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

    SciTech Connect (OSTI)

    Wutzler, Rene Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang

    2015-05-07

    The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

  20. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  1. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions

    SciTech Connect (OSTI)

    Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

    2014-08-18

    Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  2. Electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films

    SciTech Connect (OSTI)

    Xie, Y. J.; Scafetta, M. D.; Moon, E. J.; Krick, A. L.; Sichel-Tissot, R. J.; May, S. J.

    2014-08-11

    The electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films is presented. The films were grown on SrTiO{sub 3} using molecular beam epitaxy with post-growth annealing to minimize oxygen vacancies. Insulating behavior is observed from x?=?00.9, with metallic conduction only present for x?=?1.0. While the La-rich compounds exhibit polaron conduction over all temperatures measured, the Sr-rich films exhibit an electronic phase transition within the compositional window of x?=?0.490.9 as revealed by temperature-dependent resistivity measurements. The transition temperatures are found to decrease with increasing Sr content. The constructed phase diagram is discussed in the context of other 3d e{sub g} perovskite systems including manganites and cobaltites.

  3. Engineering work plan for tank 241-C-103 vapor phase characterization (ECN 613188). Revision 1

    SciTech Connect (OSTI)

    Conrad, R.B.

    1994-10-05

    The tasks described by this work plan have been completed. The purpose of this revision it to document what actually occurred during the performance of this work plan. The scope was and is limited to phases 1 and 2 as described in the program plan, revision 1. Phases 1 and 2 include the tank 241-C-103 (C-103) vapor. For economic and as low as reasonably achievable (ALARA) reasons, we will limit our scope to characterize the C-103 vapor phase for the categories that could be expected to impact facility worker safety from a toxicological and flammability standpoint. In anticipation that a vapor treatment system may be required, categories necessary for design will also be included. It will be the intent of the C-103 vapor characterization program to: (1) identify the substances from the above list of categories that are applicable to the issues involving C-103, and (2) implement a phased plan which will develop the organic vapor phase characterization method and then characterize the organics and the other selected substances to the required quantitative certainty.

  4. MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

    SciTech Connect (OSTI)

    Dugger, Michael T.; Asay, David B.; Kim, Seong H.

    2008-01-01

    Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

  5. Condensed phase conversion and growth of nanorods and other materials instead of from vapor

    DOE Patents [OSTI]

    Geohegan, David B. (Knoxville, TN); Seals, Roland D. (Oak Ridge, TN); Puretzky, Alex A. (Knoxville, TN); Fan, Xudong (Oak Ridge, TN)

    2010-10-19

    Compositions, systems and methods are described for condensed phase conversion and growth of nanorods and other materials. A method includes providing a condensed phase matrix material; and activating the condensed phase matrix material to produce a plurality of nanorods by condensed phase conversion and growth from the condensed phase matrix material instead of from vapor. The compositions are very strong. The compositions and methods provide advantages because they allow (1) formation rates of nanostructures necessary for reasonable production rates, and (2) the near net shaped production of component structures.

  6. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOE Patents [OSTI]

    Aytug, Tolga; Paranthaman, Mariappan Parans; Polat, Ozgur

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  7. Liquid-phase and vapor-phase dehydration of organic/water solutions

    DOE Patents [OSTI]

    Huang, Yu; Ly, Jennifer; Aldajani, Tiem; Baker, Richard W.

    2011-08-23

    Processes for dehydrating an organic/water solution by pervaporation or vapor separation using fluorinated membranes. The processes are particularly useful for treating mixtures containing light organic components, such as ethanol, isopropanol or acetic acid.

  8. Depth-dependent phase change in Gd{sub 2}O{sub 3} epitaxial layers under ion irradiation

    SciTech Connect (OSTI)

    Mejai, N.; Debelle, A. Thomé, L.; Sattonnay, G.; Gosset, D.; Dargis, R.; Clark, A.

    2015-09-28

    Epitaxial Gd{sub 2}O{sub 3} thin layers with the cubic structure were irradiated with 4-MeV Au{sup 2+} ions in the 10{sup 13}–10{sup 15} cm{sup −2} fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au{sup 2+} ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.

  9. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1992-02-25

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  10. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1986-12-30

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  11. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  12. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  13. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  14. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  15. On the existence of vapor-liquid phase transition in dusty plasmas

    SciTech Connect (OSTI)

    Kundu, M.; Sen, A.; Ganesh, R. [Institute for Plasma Research, Bhat, Gandhinagar 382 428, Gujarat (India); Avinash, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2014-10-15

    The phenomenon of phase transition in a dusty-plasma system (DPS) has attracted some attention in the past. Earlier Farouki and Hamaguchi [J. Chem. Phys. 101, 9876 (1994)] have demonstrated the existence of a liquid to solid transition in DPS where the dust particles interact through a Yukawa potential. However, the question of the existence of a vapor-liquid (VL) transition in such a system remains unanswered and relatively unexplored so far. We have investigated this problem by performing extensive molecular dynamics simulations which show that the VL transition does not have a critical curve in the pressure versus volume diagram for a large range of the Yukawa screening parameter ? and the Coulomb coupling parameter ?. Thus, the VL phase transition is found to be super-critical, meaning that this transition is continuous in the dusty plasma model given by Farouki and Hamaguchi. We provide an approximate analytic explanation of this finding by means of a simple model calculation.

  16. Comparative study of polar and semipolar (112?2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect (OSTI)

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112?2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750C), the indium content (<15%) of the (112?2) and (0001) InGaN layers was similar. However, for temperatures less than 750C, the indium content of the (112?2) InGaN layers (15%26%) were generally lower than those with (0001) orientation (15%32%). The compositional deviation was attributed to the different strain relaxations between the (112?2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112?2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112?2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(5060) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  17. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  18. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect (OSTI)

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  19. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOE Patents [OSTI]

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  20. Method for the generation of variable density metal vapors which bypasses the liquidus phase

    DOE Patents [OSTI]

    Kunnmann, Walter; Larese, John Z.

    2001-01-01

    The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

  1. Structural phase diagram for ultra-thin epitaxial Fe 3 O 4  / MgO(0 0 1) films: thickness and oxygen pressure dependence

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alraddadi, S.; Hines, W.; Yilmaz, T.; Gu, G. D.; Sinkovic, B.

    2016-02-19

    A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe3O4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10-7 torr to 1 × 10-5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED) and x-ray photoemission spectroscopymore » (XPS), respectively. Moreover, the quality of the epitaxial Fe3O4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe3O4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe3O4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

  2. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    SciTech Connect (OSTI)

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DSTs is given at the end of this report.

  3. Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol

    SciTech Connect (OSTI)

    Sun, Junming; Karim, Ayman M.; Zhang, He; Kovarik, Libor; Li, Xiaohong S.; Hensley, Alyssa; McEwen, Jean-Sabin; Wang, Yong

    2013-10-01

    Abstract Carbon supported metal catalysts (Cu/C, Fe/C, Pd/C, Pt/C, PdFe/C and Ru/C) have been prepared, characterized and tested for vapor-phase hydrodeoxygenation (HDO) of guaiacol (GUA) at atmospheric pressure. Phenol was the major intermediate on all catalysts. Over the noble metal catalysts saturation of the aromatic ring was the major pathway observed at low temperature (250 C), forming predominantly cyclohexanone and cyclohexanol. Substantial ring opening reaction was observed on Pt/C and Ru/C at higher reaction temperatures (e.g., 350 C). Base metal catalysts, especially Fe/C, were found to exhibit high HDO activity without ring-saturation or ring-opening with the main products being benzene, phenol along with small amounts of cresol, toluene and trimethylbenzene (TMB). A substantial enhancement in HDO activity was observed on the PdFe/C catalysts. Compared with Fe/C, the yield to oxygen-free aromatic products (i.e., benzene/toluene/TMB) on PdFe/C increased by a factor of four at 350 C, and by approximately a factor of two (83.2% versus 43.3%) at 450 C. The enhanced activity of PdFe/C is attributed to the formation of PdFe alloy as evidenced by STEM, EDS and TPR.

  4. The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

    2014-02-05

    The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

  5. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    SciTech Connect (OSTI)

    Vinokurov, D. A.; Ladugin, M. A.; Lyutetskii, A. V.; Marmalyuk, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Slipchenko, S. O. Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Shashkin, I. S.; Averkiev, N. S.; Tarasov, I. S.

    2010-06-15

    Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

  6. The role of polymer formation during vapor phase lubrication of silicon.

    SciTech Connect (OSTI)

    Dugger, Michael Thomas; Dirk, Shawn M.; Ohlhausen, James Anthony

    2010-10-01

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. With a sufficient concentration of pentanol vapor present, sliding of a silica ball on an oxidized silicon wafer can proceed with no measurable wear. The initial results of time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of wear surfaces revealed a reaction product having thickness on the order of a monolayer, and with an ion spectrum that included fragments having molecular weights of 200 or more that occurred only inside the wear tracks. The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that reactions of adsorbed alcohols on the wearing surfaces allowed polymerization of the alcohols to form higher molecular weight species. In addition to pin-on-disk studies, lubrication of silicon surfaces with pentanol vapors has also been demonstrated using MicroElectroMechanical Systems (MEMS) devices. Recent investigations of the reaction mechanisms of the alcohol molecules with the oxidized silicon surfaces have shown that wearless sliding requires a concentration of the alcohol vapor that is dependent upon the contact stress during sliding, with higher stress requiring a greater concentration of alcohol. Different vapor precursors including those with acid functionality, olefins, and methyl termination also produce polymeric reaction products, and can lubricate the silica surfaces. Doping the operating environment with oxygen was found to quench the formation of the polymeric reaction product, and demonstrates that polymer formation is not necessary for wearless sliding.

  7. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    SciTech Connect (OSTI)

    Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2005-03-11

    second residence time, the GAC bed reduced peak contaminant concentrations by 97%. After the initial peak, the inlet VOC concentration in the SMZ regeneration gas stream drops exponentially with time. During this period, the contaminants on the GAC subsequently desorbed at a nearly steady rate over the next 45 hours resulting in a relatively steady effluent concentration of approximately 25 ppm{sub v}. This lower concentration is readily degradable by a downstream vapor phase biofilter (VPB) and the steady nature of the feed stream will prevent the biomass in the VPB from enduring starvation conditions between SMZ regeneration cycles. Repetitive sorption and desorption cycles that would be expected in the field were also investigated. It was determined that although the GAC initially lost some VOC sorption capacity, the adsorption and desorption profiles stabilized after approximately 6 cycles indicating that a GAC bed should be suitable for continuous operation. In preparation for the pilot field testing of the SMZ/VPB system, design, ''in-house'' construction and testing of the field system were completed during this project period. The design of the SMZ system for the pilot test was based on previous investigations by the PI's in Wyoming, 2002 and on analyses of the produced water at the field site in New Mexico. The field tests are scheduled for summer, 2005. A cost survey, feasibility of application and cost analyses were completed to investigate the long term effectiveness of the SMZ/VPB system as a method of treating produced water for re-use. Several factors were investigated, including: current costs to treat and dispose of produced water, end-use water quality requirements, and state and federal permitting requirements.

  8. TREATMENT OF PRODUCED WATERS USING A SURFACTANT MODIFIED ZEOLITE/VAPOR PHASE BIOREATOR SYSTEM

    SciTech Connect (OSTI)

    LYNN E. KATZ; KERRY A. KINNEY; R.S. BOWMAN; E.J. SULLIVAN

    2003-10-01

    Co-produced water from the oil and gas industry is by some estimates the largest single waste stream in the country, aside from nonhazardous industrial wastes. Characteristics of produced water include high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component, and chemicals added during the oil-production process. While most of the produced water is disposed via reinjection, some of them must be treated to remove organic constituents before the water is discharged. An efficient, cost-effective treatment technology is needed to remove these constituents. Surfactant-modified zeolite (SMZ) has been used successfully to treat contaminated ground water for organic and inorganic constituents. In addition, the low cost of natural zeolites makes their use attractive in water-treatment applications. Our previous DOE research work (DE-AC26-99BC15221) demonstrated that SMZ could successfully remove BTEX compounds from the produced water. In addition, SMZ could be regenerated through a simple air sparging process. The primary goal of this project is to develop a robust SMZ/VPB treatment system to efficiently remove the organic constituents from produced water in a cost-effective manner. This report summarizes work of this project from March 2003 through September 2003. We have continued our investigation of SMZ regeneration from our previous DOE project. Ten saturation/stripping cycles have been completed for SMZ columns saturated with BTEX compounds. The results suggest that BTEX sorption capacity is not lost after ten saturation/regeneration cycles. The composition of produced water from a site operated by Crystal Solutions Ltd. in Wyoming has been characterized and was used to identify key semi-volatile components. Isotherms with selected semi-volatile components have been initiated and preliminary results have been obtained. The experimental vapor phase bioreactors for this project have been designed and

  9. Treatment of Produced Water Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    SciTech Connect (OSTI)

    Lynn E. Katz; Kerry A. Kinney; Robert S. Bowman; Enid J. Sullivan; Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Craig R. Altare

    2006-01-31

    Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. Produced waters typically contain a high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component as well as chemicals added during the oil-production process. It has been estimated that a total of 14 billion barrels of produced water were generated in 2002 from onshore operations (Veil, 2004). Although much of this produced water is disposed via reinjection, environmental and cost considerations can make surface discharge of this water a more practical means of disposal. In addition, reinjection is not always a feasible option because of geographic, economic, or regulatory considerations. In these situations, it may be desirable, and often necessary from a regulatory viewpoint, to treat produced water before discharge. It may also be feasible to treat waters that slightly exceed regulatory limits for re-use in arid or drought-prone areas, rather than losing them to reinjection. A previous project conducted under DOE Contract DE-AC26-99BC15221 demonstrated that surfactant modified zeolite (SMZ) represents a potential treatment technology for produced water containing BTEX. Laboratory and field experiments suggest that: (1) sorption of benzene, toluene, ethylbenzene and xylenes (BTEX) to SMZ follows linear isotherms in which sorption increases with increasing solute hydrophobicity; (2) the presence of high salt concentrations substantially increases the capacity of the SMZ for BTEX; (3) competitive sorption among the BTEX compounds is negligible; and, (4) complete recovery of the SMZ sorption capacity for BTEX can be achieved by air sparging the SMZ. This report summarizes research for a follow on project to optimize the regeneration process for multiple sorption/regeneration cycles, and to develop and incorporate a vapor phase bioreactor (VPB) system for treatment of the off-gas generated during

  10. Vapor-liquid-solid epitaxial growth of Si1-xGex alloy nanowires. Composition dependence on precursor reactivity and morphology control for vertical forests

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, S. G.; Manandhar, P.; Picraux, S. T.

    2015-07-07

    The growth of high-density group IV alloy nanowire forests is critical for exploiting their unique functionalities in many applications. Here, the compositional dependence on precursor reactivity and optimized conditions for vertical growth are studied for Si1- x Ge x alloy nanowires grown by the vapor-liquid-solid method. The nanowire composition versus gas partial-pressure ratio for germane-silane and germane-disilane precursor combinations is obtained at 350°C over a wide composition range (0.05 ≤ x ≤ 0.98) and a generalized model to predict composition for alloy nanowires is developed based on the relative precursor partial pressures and reactivity ratio. In combination with germane, silanemore » provides more precise compositional control at high Ge concentrations (x > 0.7), whereas disilane greatly increases the Si concentration for a given gas ratio and enables more precise alloy compositional control at small Ge concentrations (x < 0.3). Vertically oriented, non-kinking nanowire forest growth on Si (111) substrates is then discussed for silane/germane over a wide range of compositions, with temperature and precursor partial pressure optimized by monitoring the nanowire growth front using in-situ optical reflectance. For high Ge compositions (x ≈ 0.9), a “two-step” growth approach with nucleation at higher temperatures results in nanowires with high-density and uniform vertical orientation. Furthermore, increasing Si content (x ≈ 0.8), the optimal growth window is shifted to higher temperatures, which minimizes nanowire kinking morphologies. For Si-rich Si1- x Ge x alloys (x ≈ 0.25), vertical nanowire growth is enhanced by single-step, higher-temperature growth at reduced pressures.« less

  11. Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy

    SciTech Connect (OSTI)

    Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

    2010-05-01

    Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

  12. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    SciTech Connect (OSTI)

    Altukhov, A. A.; Vikharev, A. L.; Gorbachev, A. M.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B. Radishev, D. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2011-03-15

    The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

  13. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

    SciTech Connect (OSTI)

    Whiddon, R.; Zhou, B.; Borggren, J.; Aldén, M.; Li, Z. S.

    2015-09-15

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.

  14. A low phase noise microwave frequency synthesis for a high-performance cesium vapor cell atomic clock

    SciTech Connect (OSTI)

    François, B.; Boudot, R.; Calosso, C. E.; Danet, J. M.

    2014-09-15

    We report the development, absolute phase noise, and residual phase noise characterization of a 9.192 GHz microwave frequency synthesis chain devoted to be used as a local oscillator in a high-performance cesium vapor cell atomic clock based on coherent population trapping (CPT). It is based on frequency multiplication of an ultra-low phase noise 100 MHz oven-controlled quartz crystal oscillator using a nonlinear transmission line-based chain. Absolute phase noise performances of the 9.192 GHz output signal are measured to be −42, −100, −117 dB rad{sup 2}/Hz and −129 dB rad{sup 2}/Hz at 1 Hz, 100 Hz, 1 kHz, and 10 kHz offset frequencies, respectively. Compared to current results obtained in a state-of-the-art CPT-based frequency standard developed at LNE-SYRTE, this represents an improvement of 8 dB and 10 dB at f = 166 Hz and f = 10 kHz, respectively. With such performances, the expected Dick effect contribution to the atomic clock short term frequency stability is reported at a level of 6.2 × 10{sup −14} at 1 s integration time, that is a factor 3 higher than the atomic clock shot noise limit. Main limitations are pointed out.

  15. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  16. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  17. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  18. Comment on "Tunable generation and adsorption of energetic compounds in the vapor phase at trace levels: A tool for testing and developing sensitive and selective substrates for explosive detection"

    SciTech Connect (OSTI)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2013-02-13

    The evaluation of developed technologies and research on new detection approaches require the ability to generate explosive vapors in the gas phase. In this correspondence, the authors comment on a technical note describing a vaopr generator, discuss safety issues associated with explosives for vapor generators, and provide a concise review of vapor generators for explosive compounds. Approaches to measuring or monitoring the output of a vapor generators are also discussed.

  19. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  20. The gas phase emitter effect of lanthanum within ceramic metal halide lamps and its dependence on the La vapor pressure and operating frequency

    SciTech Connect (OSTI)

    Ruhrmann, C.; Hoebing, T.; Bergner, A.; Groeger, S.; Awakowicz, P.; Mentel, J.; Denissen, C.; Suijker, J.

    2015-08-07

    The gas phase emitter effect increases the lamp lifetime by lowering the work function and, with it, the temperature of the tungsten electrodes of metal halide lamps especially for lamps in ceramic vessels due to their high rare earth pressures. It is generated by a monolayer on the electrode surface of electropositive atoms of certain emitter elements, which are inserted into the lamp bulb by metal iodide salts. They are vaporized, dissociated, ionized, and deposited by an emitter ion current onto the electrode surface within the cathodic phase of lamp operation with a switched-dc or ac-current. The gas phase emitter effect of La and the influence of Na on the emitter effect of La are studied by spatially and phase-resolved pyrometric measurements of the electrode tip temperature, La atom, and ion densities by optical emission spectroscopy as well as optical broadband absorption spectroscopy and arc attachment images by short time photography. An addition of Na to the lamp filling increases the La vapor pressure within the lamp considerably, resulting in an improved gas phase emitter effect of La. Furthermore, the La vapor pressure is raised by a heating of the cold spot. In this way, conditions depending on the La vapor pressure and operating frequency are identified, at which the temperature of the electrodes becomes a minimum.

  1. NOVEL PROCESS FOR REMOVAL AND RECOVERY OF VAPOR-PHASE MERCURY

    SciTech Connect (OSTI)

    Craig S. Turchi

    2000-09-29

    The goal of this project is to investigate the use of a regenerable sorbent for removing and recovering mercury from the flue gas of coal-fired power plants. The process is based on the sorption of mercury by noble metals and the thermal regeneration of the sorbent, recovering the desorbed mercury in a small volume for recycling or disposal. The project was carried out in two phases, covering five years. Phase I ran from September 1995 through September 1997 and involved development and testing of sorbent materials and field tests at a pilot coal-combustor. Phase II began in January 1998 and ended September 2000. Phase II culminated with pilot-scale testing at a coal-fired power plant. The use of regenerable sorbents holds the promise of capturing mercury in a small volume, suitable for either stable disposal or recycling. Unlike single-use injected sorbents such as activated carbon, there is no impact on the quality of the fly ash. During Phase II, tests were run with a 20-acfm pilot unit on coal-combustion flue gas at a 100 lb/hr pilot combustor and a utility boiler for four months and six months respectively. These studies, and subsequent laboratory comparisons, indicated that the sorbent capacity and life were detrimentally affected by the flue gas constituents. Sorbent capacity dropped by a factor of 20 to 35 during operations in flue gas versus air. Thus, a sorbent designed to last 24 hours between recycling lasted less than one hour. The effect resulted from an interaction between SO{sub 2} and either NO{sub 2} or HCl. When SO{sub 2} was combined with either of these two gases, total breakthrough was seen within one hour in flue gas. This behavior is similar to that reported by others with carbon adsorbents (Miller et al., 1998).

  2. Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

    SciTech Connect (OSTI)

    Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D.

    1996-05-01

    The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

  3. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  4. InAs quantum dot growth on Al{sub x}Ga{sub 1?x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    SciTech Connect (OSTI)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mouro, R. T.; Pires, M. P.; Micha, D. N.

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1?x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x?=?0.3 and InAs dot vertical dimensions of 5?nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  5. Epitaxial strengthening of crystals

    DOE Patents [OSTI]

    Morris, Robert C.; Marion II, Ohn E.; Gaultieri, Devlin M.

    1988-12-06

    An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

  6. Epitaxial strengthening of crystals

    DOE Patents [OSTI]

    Morris, Robert C.; Marion, II, John E.; Gaultieri, Devlin M.

    1988-01-01

    An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

  7. Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics

    SciTech Connect (OSTI)

    Skibinski, Jakub; Wejrzanowski, Tomasz; Caban, Piotr; Kurzydlowski, Krzysztof J.

    2014-10-06

    In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Epitaxial growth means crystal growth that progresses while inheriting the laminar structure and the orientation of substrate crystals. One of the technological problems is to obtain homogeneous growth rate over the main deposit area. Since there are many agents influencing reaction on crystal area such as temperature, pressure, gas flow or reactor geometry, it is difficult to design optimal process. According to the fact that it's impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during crystal growth, modeling is the only solution to understand the process precisely. Numerical simulations allow to understand the epitaxial process by calculation of heat and mass transfer distribution during growth of gallium nitride. Including chemical reactions in numerical model allows to calculate the growth rate of the substrate and estimate the optimal process conditions for obtaining the most homogeneous product.

  8. Cantilever epitaxial process

    DOE Patents [OSTI]

    Ashby, Carol I.; Follstaedt, David M.; Mitchell, Christine C.; Han, Jung

    2003-07-29

    A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

  9. Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels, Phase 2: Evaluations of Field Samples and Laboratory Blends

    SciTech Connect (OSTI)

    Gardiner, D. P.; Bardon, M. F.; LaViolette, M.

    2010-04-01

    Study to measure the flammability of gasoline/ethanol fuel vapors at low ambient temperatures and develop a mathematical model to predict temperatures at which flammable vapors were likely to form.

  10. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect (OSTI)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  11. Vaporization of zinc from scrap

    SciTech Connect (OSTI)

    Ozturk, B.; Fruehan, R.J.

    1996-12-31

    The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

  12. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  13. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  14. Epitaxial CoSi2 on MOS devices

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  15. Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

  16. Structure and magnetism of epitaxial rare-earth-transition-metal films

    SciTech Connect (OSTI)

    Fullerton, E.E.; Sowers, C.H.; Pearson, J.P.; Bader, S.D.

    1996-10-01

    Growth of epitaxial transition-metal superlattices; has proven essential in elucidating the role of crystal orientation and structure on magnetic properties such as giant magnetoresistance, interlayer coupling, and magnetic surface anisotropies. Extending these studies to the growth of epitaxial rare earth-transition metal (RE-TM) films and superlattices promises to play an equally important role in exploring and optimizing the properties of hard magnets. For instance, Skomski and Coey predict that a giant energy product (120 MG Oe) is possible in multilayer structures consisting of aligned hard-magnet layers exchanged coupled with soft-phase layers with high magnetization. Epitaxy provides one route to synthesizing such exchange-hardened magnets on controlled length scales. Epitaxial growth also allows the magnetic properties to be tailored by controlling the crystal orientation and the anisotropies of the magnetic layers and holds the possibility of stabilizing metastable phases. This paper describes the epitaxy and magnetic properties for several alloys.

  17. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

    SciTech Connect (OSTI)

    Harmand, J.C.; Patriarche, G.; Pere-Laperne, N.; Merat-Combes, M-N.; Travers, L.; Glas, F.

    2005-11-14

    GaAs nanowires were grown by molecular-beam epitaxy on (111)B oriented surfaces, after the deposition of Au nanoparticles. Different growth durations and different growth terminations were tested. After the growth of the nanowires, the structure and the composition of the metallic particles were analyzed by transmission electron microscopy and energy dispersive x-ray spectroscopy. We identified three different metallic compounds: the hexagonal {beta}{sup '}Au{sub 7}Ga{sub 2} structure, the orthorhombic AuGa structure, and an almost pure Au face centered cubic structure. We explain how these different solid phases are related to the growth history of the samples. It is concluded that during the wire growth, the metallic particles are liquid, in agreement with the generally accepted vapor-liquid-solid mechanism. In addition, the analysis of the wire morphology indicates that Ga adatoms migrate along the wire sidewalls with a mean length of about 3 {mu}m.

  18. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Moisture Control Vapor Barriers or Vapor Diffusion Retarders Vapor Barriers or Vapor ... can be part of an overall moisture control strategy for your home. | Photo courtesy ...

  19. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS Citation Details In-Document Search Title: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY ...

  20. Portable vapor diffusion coefficient meter

    DOE Patents [OSTI]

    Ho, Clifford K.

    2007-06-12

    An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

  1. Long Term Field Development of a Surfactant Modified Zeolite/Vapor Phase Bioreactor System for Treatment of Produced Waters for Power Generation

    SciTech Connect (OSTI)

    Lynn Katz; Kerry Kinney; Robert Bowman; Enid Sullivan; Soondong Kwon; Elaine Darby; Li-Jung Chen; Craig Altare

    2007-12-31

    The main goal of this research was to investigate the feasibility of using a combined physicochemical/biological treatment system to remove the organic constituents present in saline produced water. In order to meet this objective, a physical/chemical adsorption process was developed and two separate biological treatment techniques were investigated. Two previous research projects focused on the development of the surfactant modified zeolite adsorption process (DE-AC26-99BC15221) and development of a vapor phase biofilter (VPB) to treat the regeneration off-gas from the surfactant modified zeolite (SMZ) adsorption system (DE-FC26-02NT15461). In this research, the SMZ/VPB was modified to more effectively attenuate peak loads and to maintain stable biodegradation of the BTEX constituents from the produced water. Specifically, a load equalization system was incorporated into the regeneration flow stream. In addition, a membrane bioreactor (MBR) system was tested for its ability to simultaneously remove the aromatic hydrocarbon and carboxylate components from produced water. The specific objectives related to these efforts included the following: (1) Optimize the performance VPBs treating the transient loading expected during SMZ regeneration: (a) Evaluate the impact of biofilter operating parameters on process performance under stable operating conditions. (b) Investigate how transient loads affect biofilter performance, and identify an appropriate technology to improve biological treatment performance during the transient regeneration period of an SMZ adsorption system. (c) Examine the merits of a load equalization technology to attenuate peak VOC loads prior to a VPB system. (d) Evaluate the capability of an SMZ/VPB to remove BTEX from produced water in a field trial. (2) Investigate the feasibility of MBR treatment of produced water: (a) Evaluate the biodegradation of carboxylates and BTEX constituents from synthetic produced water in a laboratory-scale MBR. (b

  2. Water Vapor Experiment Concludes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Water Vapor Experiment Concludes The AIRS (atmospheric infrared sounder) Water Vapor Experiment - Ground (AWEX-G) intensive operations period (IOP) at the SGP central facility ...

  3. Martensite transformation of epitaxial Ni-Ti films

    SciTech Connect (OSTI)

    Buschbeck, J.; Kozhanov, A.; Kawasaki, J. K.; James, R. D.; Palmstroem, C. J.

    2011-05-09

    The structure and phase transformations of thin Ni-Ti shape memory alloy films grown by molecular beam epitaxy are investigated for compositions from 43 to 56 at. % Ti. Despite the substrate constraint, temperature dependent x-ray diffraction and resistivity measurements reveal reversible, martensitic phase transformations. The results suggest that these occur by an in-plane shear which does not disturb the lattice coherence at interfaces.

  4. Crystallization engineering as a route to epitaxial strain control

    SciTech Connect (OSTI)

    Akbashev, Andrew R.; Plokhikh, Aleksandr V.; Barbash, Dmitri; Lofland, Samuel E.; Spanier, Jonathan E.

    2015-10-01

    The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  5. Structural consequences of hydrogen intercalation of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    of epitaxial graphene on SiC(0001) Citation Details In-Document Search Title: Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Authors: ...

  6. Room temperature photoluminescence from In{sub x}Al{sub (1?x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 1012?nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1?x)}N were comparatively investigated for indium compositions ranging from x?=?0.092 to 0.235, including x?=?0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  7. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect (OSTI)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  8. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, John P.; Larson, Ronald A.; Goodrich, Lorenzo D.; Hall, Harold J.; Stoddard, Billy D.; Davis, Sean G.; Kaser, Timothy G.; Conrad, Frank J.

    1995-01-01

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

  9. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  10. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

    DOE Patents [OSTI]

    Norman, Andrew G.; Olson, Jerry M.

    2007-06-12

    Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

  11. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  12. Explanation of the limiting thickness observed in low-temperature silicon epitaxy

    SciTech Connect (OSTI)

    Thiesen, Jack; Branz, Howard M.; Crandall, Richard S.

    2000-11-27

    Solution of the partial differential equation for diffusion of mobile atoms during solid film growth demonstrates that the observed phase transition in low-temperature silicon epitaxy is triggered by supersaturation of the growing layer with hydrogen. The limiting thickness of the epitaxial layer, h{sub epi}, is completely determined by measurable quantities: the flux of hydrogen, the hydrogen diffusion coefficient, and the layer growth rate. Our model accounts for the observed Arrhenius and growth rate dependence of h{sub epi}.

  13. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  14. Enhanced internal quantum efficiency and light extraction efficiency from textured GaN/AlGaN quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Cabalu, J.S.; Thomidis, C.; Moustakas, T.D.; Riyopoulos, S.; Zhou Lin; Smith, David J.

    2006-03-15

    GaN/Al{sub 0.2}Ga{sub 0.8}N multiple quantum wells (MQWs) were grown by molecular beam epitaxy on randomly textured and atomically smooth (0001) GaN templates. Smooth and textured GaN templates were deposited on (0001) sapphire substrates by varying the III/V ratio and the substrate temperature during growth by the hydride vapor-phase epitaxy method. We find that the MQWs replicate the texture of the GaN template, which was found to have a Gaussian distribution. The peak photoluminescence intensity from the textured MQWs is always higher than from the smooth MQWs and for GaN (7 nm)/Al{sub 0.2}Ga{sub 0.8}N (8 nm) MQWs, it is 700 times higher than that from similarly produced MQWs on smooth GaN templates. This result is attributed partly to the enhancement in light extraction efficiency and partly to the enhancement in internal quantum efficiency. The origin of the increase in internal quantum efficiency is partly due to the reduction of the quantum-confined Stark effect, since the polarization vector intersects the quantum well (QW) planes at angles smaller than 90 deg. , and partly due to the charge redistribution in the QWs caused by the polarization component parallel to the planes of the QWs.

  15. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  16. ARM Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ARM Water Vapor IOP The SGP CART site will host the third ARM water vapor IOP on September 18-October 8, 2000. The CART site is home to a powerful array of instruments capable of ...

  17. Method of depositing epitaxial layers on a substrate

    SciTech Connect (OSTI)

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  18. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value...

    Office of Scientific and Technical Information (OSTI)

    G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product Citation Details In-Document Search Title: G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) ...

  19. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS Citation Details In-Document Search Title: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS You are ...

  20. Vapor Pressure and Molecular Composition of Vapors of the RbF...

    Office of Scientific and Technical Information (OSTI)

    in the vapor phase of the respective systems. Farther work on the NaF-ZrFsub 4 system points to the existence of the gaseous complex NaZrsub 2Fsub 9 rather than NaZrFsub ...

  1. Epitaxial Single Crystal Nanostructures for Batteries & PVs ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Lithium Sulfur Batteries Better Ham & Cheese: Enhanced Anodes and Cathodes for Fuel Cells Epitaxial Single Crystal Nanostructures for Batteries & PVs High Performance ...

  2. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  3. Controlled Covalent Modification of Epitaxial Single Layer Graphene...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlled Covalent Modification of Epitaxial Single Layer Graphene on ... Title: Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC ...

  4. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  5. Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite...

    Office of Scientific and Technical Information (OSTI)

    Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films Citation Details In-Document Search Title: Strain Control of Oxygen Vacancies in Epitaxial Strontium ...

  6. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC...

    Office of Scientific and Technical Information (OSTI)

    Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene ...

  7. Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Dependent Strain in Epitaxial Graphene. Citation Details In-Document Search Title: Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene. Abstract not provided. ...

  8. Epitaxial ternary nitride thin films prepared by a chemical solution...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details ... This is the first report of epitaxial growth of ternary ...

  9. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Weatherize » Moisture Control » Vapor Barriers or Vapor Diffusion Retarders Vapor Barriers or Vapor Diffusion Retarders Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. In most U.S. climates, vapor barriers, or -- more

  10. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  11. Vapor spill monitoring method

    DOE Patents [OSTI]

    Bianchini, Gregory M.; McRae, Thomas G.

    1985-01-01

    Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

  12. ARM - Water Vapor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Vapor Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, ... FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox Lesson Plans Water ...

  13. The use of DRIFTS-MS and kinetic studies to determine the role of acetic acid in the palladium-catalyzed vapor-phase synthesis of vinyl acetate

    SciTech Connect (OSTI)

    Augustine, S.M.; Blitz, J.P. (Quantum Chemical Corp., Cincinnati, OH (United States))

    1993-07-01

    Supported palladium catalyzes the synthesis of vinyl acetate (VA) by oxyacetylation of ethylene. Alkali promoters increase activity and selectivity. The role of acetic acid (HOAc) in these processes is not well understood. Activation energy studies show that HOAc alters the catalyst site and lowers the reaction barrier to VA formation. After correction for this effect, the kinetics reveal that as a reagent HOAc is zero order. This is probably due to a strong adsorption of HOAc and Pd which forms the catalyst active phase. Detailed spectroscopic studies support this conclusion. The surface processes on a supported vinyl acetate catalyst were studied using a method which couples diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) with mass spectrometry (MS). The DRIFTS-MS technique combines the capability of selectively analyzing IR-active surface species with sensitive detection of transient reaction products. By comparing the catalyst with mixtures of palladium acetate powder physically dispersed in potassium chloride, it is determined that the active phase on the catalyst is a form of palladium acetate. Compound formation is consistent with the strong chemisorption of HOAc on Pd. Kinetic analysis of temperature-programmed reaction(TPRxn) data suggests that Pd metal or metal oxide adjacent to the active site is important in the reaction mechanism. 25 refs., 10 figs., 2 tabs.

  14. Vapor Pressures and Heats of Vaporization of Primary Coal Tars

    Office of Scientific and Technical Information (OSTI)

    ... Therefore, future research could be directed at measuring the vapor pressures for the ... The results from the current work show that measuring the vapor pressures of complicated ...

  15. Epitaxial silicon devices for dosimetry applications

    SciTech Connect (OSTI)

    Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

    2007-04-23

    A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

  16. Electroless epitaxial etching for semiconductor applications

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  17. Temperature, Water Vapor, and Clouds"

    Office of Scientific and Technical Information (OSTI)

    Radiometric Studies of Temperature, Water Vapor, and Clouds" Project ID: 0011106 ... measurements of column amounts of water vapor and cloud liquid has been well ...

  18. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOE Patents [OSTI]

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  19. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2015-03-01

    Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

  20. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  1. Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gallagher, J. C.; Esser, B. D.; Morrow, R.; Dunsiger, S. R.; Williams, R. E. A.; Woodward, P. M.; McComb, D. W.; Yang, F. Y.

    2016-02-29

    Epitaxial films of the pyrochlore Nd2Ir2O7 have been grown on (111)-oriented yttria-stabilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing. X-ray diffraction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ. Scanning transmission electron microscopy (STEM) investigation of an Nd2Ir2O7 film with a short post-annealing provides insight into the mechanism for crystallization of Nd2Ir2O7 during the post-annealing process. STEM images reveal clear pyrochlore ordering of Nd and Ir in the films. As a result, the epitaxial relationship between the YSZ and Nd2Ir2O7 is observed clearly while some interfacial regions show a thin region with polycrystallinemore » Ir nanocrystals.« less

  2. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1986-08-15

    The atomic vapor laser isotope separation (AVLIS) process for the enrichment of uranium is evaluated. (AIP)

  3. Sr{sub 1.98}Eu{sub 0.02}SiO{sub 4} luminescence whisker based on vapor-phase deposition: Facile synthesis, uniform morphology and enhanced luminescence properties

    SciTech Connect (OSTI)

    Xu, Jian; Hassan, Dhia A.; Zeng, Renjie; Peng, Dongliang

    2015-11-15

    Highlights: • For the first time, it is possible to obtain Sr{sub 1.98}Eu{sub 0.02}SiO{sub 4} whisker. • The whiskers are smooth and uniform with L/D ratio over 50. • Durability and thermal stability of the whisker are enhanced. - Abstract: A high performance strontium silicate phosphor has been successfully synthesized though a facile vapor-phase deposition method. The product consists of single crystal whiskers which are smooth and uniform, and with a sectional equivalent diameter of around 5 μm; the aspect ratio is over 50 and no agglomeration can be observed. X-ray diffraction result confirmed that the crystal structure of the whisker was α’-Sr{sub 2}SiO{sub 4}. The exact chemical composition was Sr{sub 1.98}Eu{sub 0.02}SiO{sub 4} which was analyzed by energy dispersive spectrometer and inductively coupled plasma-mass spectrometer. The whisker shows broad green emission with peak at 523 nm ranging from 470 to 600 nm (excited at 370 nm). Compared with traditional Sr{sub 2}SiO{sub 4}:Eu phosphor, durability (at 85% humidity and 85 °C) and thermal stability of the whisker are obviously improved. Moreover, growth mechanism of the Sr{sub 1.98}Eu{sub 0.02}SiO{sub 4} whiskers is Vapor–Liquid–Solid. On a macro-scale, the product is still powder which makes it suitable for the current packaging process of WLEDs.

  4. Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels; Phase 3: Effects of Winter Gasoline Volatility and Ethanol Content on Blend Flammability; Flammability Limits of Denatured Ethanol

    SciTech Connect (OSTI)

    Gardiner, D. P.; Bardon, M. F.; Clark, W.

    2011-07-01

    This study assessed differences in headspace flammability for summertime gasolines and new high-ethanol content fuel blends. The results apply to vehicle fuel tanks and underground storage tanks. Ambient temperature and fuel formulation effects on headspace vapor flammability of ethanol/gasoline blends were evaluated. Depending on the degree of tank filling, fuel type, and ambient temperature, fuel vapors in a tank can be flammable or non-flammable. Pure gasoline vapors in tanks generally are too rich to be flammable unless ambient temperatures are extremely low. High percentages of ethanol blended with gasoline can be less volatile than pure gasoline and can produce flammable headspace vapors at common ambient temperatures. The study supports refinements of fuel ethanol volatility specifications and shows potential consequences of using noncompliant fuels. E85 is flammable at low temperatures; denatured ethanol is flammable at warmer temperatures. If both are stored at the same location, one or both of the tanks' headspace vapors will be flammable over a wide range of ambient temperatures. This is relevant to allowing consumers to splash -blend ethanol and gasoline at fueling stations. Fuels compliant with ASTM volatility specifications are relatively safe, but the E85 samples tested indicate that some ethanol fuels may produce flammable vapors.

  5. Vapor concentration monitor

    DOE Patents [OSTI]

    Bayly, John G.; Booth, Ronald J.

    1977-01-01

    An apparatus for monitoring the concentration of a vapor, such as heavy water, having at least one narrow bandwidth in its absorption spectrum, in a sample gas such as air. The air is drawn into a chamber in which the vapor content is measured by means of its radiation absorption spectrum. High sensitivity is obtained by modulating the wavelength at a relatively high frequency without changing its optical path, while high stability against zero drift is obtained by the low frequency interchange of the sample gas to be monitored and of a reference sample. The variable HDO background due to natural humidity is automatically corrected.

  6. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

    1983-02-08

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

  7. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    SciTech Connect (OSTI)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  8. Solvent vapor collector

    DOE Patents [OSTI]

    Ellison, Kenneth; Whike, Alan S.

    1979-01-30

    A solvent vapor collector is mounted on the upstream inlet end of an oven having a gas-circulating means and intended for curing a coating applied to a strip sheet metal at a coating station. The strip sheet metal may be hot and solvent vapors are evaporated at the coating station and from the strip as it passes from the coating station to the oven. Upper and lower plenums within a housing of the collector are supplied with oven gases or air from the gas-circulating means and such gases or air are discharged within the collector obliquely in a downstream direction against the strip passing through that collector to establish downstream gas flows along the top and under surfaces of the strip so as, in turn, to induct solvent vapors into the collector at the coating station. A telescopic multi-piece shroud is usefully provided on the housing for movement between an extended position in which it overlies the coating station to collect solvent vapors released thereat and a retracted position permitting ready cleaning and adjustment of that coating station.

  9. Category:Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    Mercury Vapor Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Geothermalpower.jpg Looking for the Mercury Vapor page? For detailed information on Mercury Vapor as...

  10. LaCrO3 heteroepitaxy on SrTiO3(001) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Qiao, Liang; Droubay, Timothy C.; Bowden, Mark E.; Shutthanandan, V.; Kaspar, Tiffany C.; Chambers, Scott A.

    2011-08-09

    Stoichiometric, epitaxial LaCrO3 films have been grown on TiO2-terminated SrTiO3(001) substrates by molecular beam epitaxy using O2 as the oxidant. Film growth occurred in a layer-by-layer fashion, giving rise to structurally excellent films and surfaces which preserve the step-terrace structure of the substrate. The critical thickness is in excess of 500 . Near-surface Cr(III) is highly susceptible to further oxidation to Cr(V), leading to the formation of a disordered phase upon exposure to atomic oxygen. Recovery of the original epitaxial LaCrO3 phase is readily achieved by vacuum annealing.

  11. Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    SciTech Connect (OSTI)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada); Prasad, B. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Egilmez, M. [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)] [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

    2013-12-02

    In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ? attains a large time dependent value. The ? decreases sharply with an increasing angle ? between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}?/sin{sup 2}? dependence for all films. The regular oscillations are recovered during repetitive sweeping of ? between 0 and 180. We discuss possible factors that could produce these unusual changes in the resistivity.

  12. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R

    2012-10-23

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  13. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R.

    2016-05-03

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  14. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan; Hassani, Vahab

    2008-05-20

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  15. Filter vapor trap

    DOE Patents [OSTI]

    Guon, Jerold

    1976-04-13

    A sintered filter trap is adapted for insertion in a gas stream of sodium vapor to condense and deposit sodium thereon. The filter is heated and operated above the melting temperature of sodium, resulting in a more efficient means to remove sodium particulates from the effluent inert gas emanating from the surface of a liquid sodium pool. Preferably the filter leaves are precoated with a natrophobic coating such as tetracosane.

  16. In-well vapor stripping drilling and characterization work plan

    SciTech Connect (OSTI)

    Koegler, K.J.

    1994-03-13

    This work plan provides the information necessary for drilling, sampling, and hydrologic testing of wells to be completed in support of a demonstration of the in-well vapor stripping system. The in-well vapor stripping system is a remediation technology designed to preferentially extract volatile organic compounds (VOCs) from contaminated groundwater by converting them to a vapor phase. Air-lift pumping is used to lift and aerate groundwater within the well. The volatiles escaping the aerated water are drawn off by a slight vacuum and treated at the surface while the water is allowed to infiltrate the vadose zone back to the watertable.

  17. The vapor pressures of explosives

    SciTech Connect (OSTI)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 C.

  18. Production of higher quality bio-oils by in-line esterification of pyrolysis vapor

    SciTech Connect (OSTI)

    Hilten, Roger Norris; Das, Keshav; Kastner, James R; Bibens, Brian P

    2014-12-02

    The disclosure encompasses in-line reactive condensation processes via vapor phase esterification of bio-oil to decease reactive species concentration and water content in the oily phase of a two-phase oil, thereby increasing storage stability and heating value. Esterification of the bio-oil vapor occurs via the vapor phase contact and subsequent reaction of organic acids with ethanol during condensation results in the production of water and esters. The pyrolysis oil product can have an increased ester content and an increased stability when compared to a condensed pyrolysis oil product not treated with an atomized alcohol.

  19. Domain epitaxy for thin film growth

    DOE Patents [OSTI]

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  20. Wafer bonded epitaxial templates for silicon heterostructures

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  1. Vapor spill pipe monitor

    DOE Patents [OSTI]

    Bianchini, G.M.; McRae, T.G.

    1983-06-23

    The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

  2. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  3. Epitaxial stabilization and phase instability of VO2 polymorphs

    Office of Scientific and Technical Information (OSTI)

    ... | 6:19621 | DOI: 10.1038srep19621 1 www.nature.comscientificreports VO2 polymorphs ... | 6:19621 | DOI: 10.1038srep19621 2 www.nature.comscientificreports Figure 1. ...

  4. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  5. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  6. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  7. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  8. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  9. Selective epitaxy using the gild process

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  10. Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated...

    Office of Scientific and Technical Information (OSTI)

    Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Citation Details In-Document Search Title: Comparison of Thin Epitaxial Film Silicon ...

  11. Strain control of oxygen vacancies in epitaxial strontium cobaltite...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Strain control of oxygen vacancies in epitaxial strontium cobaltite films ... This content will become publicly available on January 25, 2017 Title: Strain control of ...

  12. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth TantalateNiobate ...

  13. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

  14. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome...

  15. Modification of structure and magnetic anisotropy of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    films by hydrogen reduction Citation Details In-Document Search Title: Modification of structure and magnetic anisotropy of epitaxial CoFeO films by hydrogen reduction ...

  16. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect (OSTI)

    Wang, Yuhan Kittiwatanakul, Salinporn; Lu, Jiwei; Comes, Ryan B.; Wolf, Stuart A.

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  17. Final Report - Low Cost, Epitaxial Growth of II-VI Materials...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Low Cost, Epitaxial Growth of II-VI Materials for Multijunction Photovoltaic Cells Final Report - Low Cost, Epitaxial Growth of II-VI Materials for Multijunction Photovoltaic Cells ...

  18. LARGE-AREA EPITAXIAL GRAPHENE LAYER. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Citation Details In-Document Search Title: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Abstract not provided. Authors: Ohta, Taisuke ...

  19. Liquid-phase exfoliation of chemical vapor deposition-grown single layer graphene and its application in solution-processed transparent electrodes for flexible organic light-emitting devices

    SciTech Connect (OSTI)

    Wu, Chaoxing; Li, Fushan E-mail: gtl-fzu@hotmail.com; Wu, Wei; Chen, Wei; Guo, Tailiang E-mail: gtl-fzu@hotmail.com

    2014-12-15

    Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (?8 ?/?), high transmittance (?81% at 550?nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.

  20. THERMALLY OPERATED VAPOR VALVE

    DOE Patents [OSTI]

    Dorward, J.G. Jr.

    1959-02-10

    A valve is presented for use in a calutron to supply and control the vapor to be ionized. The invention provides a means readily operable from the exterior of the vacuum tank of the apparatuss without mechanical transmission of forces for the quick and accurate control of the ionizing arc by a corresponding control of gas flow theretos thereby producing an effective way of carefully regulating the operation of the calutron. The invention consists essentially of a tube member extending into the charge bottle of a calutron devices having a poppet type valve closing the lower end of the tube. An electrical heating means is provided in the valve stem to thermally vary the length of the stem to regulate the valve opening to control the flow of material from the charge bottle.

  1. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  2. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect (OSTI)

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 ?m/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  3. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, Richard W.; Paisner, Jeffrey A.; Story, Thomas

    1990-01-01

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique.

  4. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  5. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo{sub 5}(0001) epitaxial thin films

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    SmCo{sub 5}(0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al{sub 2}O{sub 3}(0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo{sub 5}(0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo{sub 5} film and substitute the Co sites in SmCo{sub 5} structure forming an alloy compound of Sm(Co,Cu){sub 5}. The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo{sub 5} film is assisting the formation of Sm(Co,Cu){sub 5} ordered phase.

  6. Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

    SciTech Connect (OSTI)

    Yun, Yu; Meng, Dechao; Wang, Jianlin; Ma, Chao; Zhai, Xiaofang; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Brown, Gail J.; and others

    2015-07-06

    There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.

  7. Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

    SciTech Connect (OSTI)

    Wang, Tianqi; Prakash, Abhinav; Jalan, Bharat; Warner, Ellis; Gladfelter, Wayne L.

    2015-03-15

    The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

  8. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  9. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

    1983-04-19

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  10. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-12-15

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  11. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    SciTech Connect (OSTI)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  12. Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phasehydrodeoxy...

    Office of Scientific and Technical Information (OSTI)

    Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol Citation Details In-Document Search Title: Carbon-Supported bimetallic Pd-Fe catalysts ...

  13. Role of carbon surface diffusion and strain on the epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). Citation Details In-Document Search Title: Role of carbon surface diffusion and strain ...

  14. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  15. Depth-resolved magnetic and structural analysis of relaxing epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Depth-resolved magnetic and structural analysis of relaxing epitaxial Sr 2 CrReO 6 <...

  16. Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/Sr{sub 2}RuO{sub 4} heterostructures

    SciTech Connect (OSTI)

    Schlom, D.G.; Merritt, B.A.; Madhavan, S. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering] [and others

    1997-09-01

    The anisotropic oxide superconductors YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} and Sr{sub 2}RuO{sub 4} have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr{sub 2}RuO{sub 4} films were grown by pulsed laser deposition. YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films were then grown on both orientations of Sr{sub 2}RuO{sub 4} films and the resulting epitaxy was characterized.

  17. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  18. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest

  19. Crystal nucleation and near-epitaxial growth in nacre

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystal nucleation and near-epitaxial growth in nacre Crystal nucleation and near-epitaxial growth in nacre Print Thursday, 12 December 2013 13:56 Nacre--the iridescent inner lining of many mollusk shells-- has a unique strcuture that is remarkably resistant to fracture. The nacre featured on this cover is from Haliotis laevigata with average layer thickness 470-nm. The colors represent crystal orientationthe crystal lattice tilts across tablets.left stack all tablets are yellow, hence all

  20. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

    1. Vapor deposition of thin films

      DOE Patents [OSTI]

      Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

      1992-01-01

      A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

    2. LABORATORY TESTING TO SIMULATE VAPOR SPACE CORROSION IN RADIOACTIVE WASTE STORAGE TANKS

      SciTech Connect (OSTI)

      Wiersma, B.; Garcia-Diaz, B.; Gray, J.

      2013-08-30

      Radioactive liquid waste has been stored in underground carbon steel tanks for nearly 70 years at the Hanford nuclear facility. Vapor space corrosion of the tank walls has emerged as an ongoing challenge to overcome in maintaining the structural integrity of these tanks. The interaction between corrosive and inhibitor species in condensates/supernates on the tank wall above the liquid level, and their interaction with vapor phase constituents as the liquid evaporates from the tank wall influences the formation of corrosion products and the corrosion of the carbon steel. An effort is underway to gain an understanding of the mechanism of vapor space corrosion. Localized corrosion, in the form of pitting, is of particular interest in the vapor space. CPP testing was utilized to determine the susceptibility of the steel in a simulated vapor space environment. The tests also investigated the impact of ammonia gas in the vapor space area on the corrosion of the steel. Vapor space coupon tests were also performed to investigate the evolution of the corrosion products during longer term exposures. These tests were also conducted at vapor space ammonia levels of 50 and 550 ppm NH{sub 3} (0.005, and 0.055 vol.%) in air. Ammonia was shown to mitigate vapor space corrosion.

    3. Vapor generation methods for explosives detection research

      SciTech Connect (OSTI)

      Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

      2012-12-01

      The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

    4. Vacuum vapor deposition gun assembly

      DOE Patents [OSTI]

      Zeren, Joseph D.

      1985-01-01

      A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

    5. An optical water vapor sensor for unmanned aerial vehicles (Technical...

      Office of Scientific and Technical Information (OSTI)

      An optical water vapor sensor for unmanned aerial vehicles Citation Details In-Document Search Title: An optical water vapor sensor for unmanned aerial vehicles The water vapor ...

    6. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Silicon

      Broader source: Energy.gov [DOE]

      This study examines the current, mid-term, and long-term manufacturing costs for III-Vs deposited by traditional Metal Organic Vapor Phase Epitaxy.

    7. Chemistry, phase formation, and catalytic activity of thinpalladium...

      Office of Scientific and Technical Information (OSTI)

      Title: Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition The chemistry, ...

    8. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

      2015-02-01

      Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

    9. Atomic vapor laser isotope separation process

      DOE Patents [OSTI]

      Wyeth, R.W.; Paisner, J.A.; Story, T.

      1990-08-21

      A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique. 23 figs.

    10. ARM - Field Campaign - Water Vapor IOP

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP ... Responses to Site Operations Questionnaires for Water Vapor IOP Instrument Name Instrument ...

    11. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO 2 Films

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

      2008-01-01

      Ulmore » trathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin ( ∼ 10–12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ∼ 1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.« less

    12. Vapor Retarder Classification - Building America Top Innovation |

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Department of Energy Vapor Retarder Classification - Building America Top Innovation Vapor Retarder Classification - Building America Top Innovation Photo of a vapor retarder classification. Air-tight and well-insulated homes have little or no tolerance for drying if they get wet; moisture control is critical. This Top Innovation profile describes Building America research that established vapor retarder classifications and appropriate applications that has been instrumental in the market

    13. Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

      SciTech Connect (OSTI)

      Han, Cheng; Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 ; Lin, Jiadan; Xiang, Du; Wang, Chaocheng; Wang, Li; Chen, Wei; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542

      2013-12-23

      By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

    14. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

      2016-04-01

      Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

    15. Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films...

      Office of Scientific and Technical Information (OSTI)

      Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Citation Details In-Document Search Title: Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Authors: Kwon, ...

    16. Chemical vapor deposition of sialon

      DOE Patents [OSTI]

      Landingham, R.L.; Casey, A.W.

      A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

    17. Means and method for vapor generation

      DOE Patents [OSTI]

      Carlson, Larry W.

      1984-01-01

      A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

    18. Means and method for vapor generation

      DOE Patents [OSTI]

      Carlson, L.W.

      A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid - starting as feedwater heating where no vapors are present, progressing to nucleate heating where vaporization begins and some vapors are present, and concluding with film heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10 to 30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

    19. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

      SciTech Connect (OSTI)

      Feng, Wuwei Wang, Weihua; Zhao, Chenglong; Van Quang, Nguyen; Cho, Sunglae; Dung, Dang Duc

      2015-11-15

      We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

    20. Epitaxial growth of NiTiO3 with a distorted ilmenite structure

      SciTech Connect (OSTI)

      Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Bolin, Trudy B.; Shelton, William A.; Chambers, Scott A.

      2012-06-30

      MTiO3 (M = Fe, Mn, Ni) compounds have received recent attention as possible candidates for new multiferroic materials capable of magnetization switching by application of an electric field. Epitaxial Ni1-xTi1-yO3 films of different thickness and composition were deposited on Al2O3(0001) by pulsed laser deposition, and characterized using several techniques. Structural parameters for the metastable LiNbO3-type NiTiO3 structure with the space group R3c were predicted using density functional theory calculations, and compared with the experimental results. Our structural data from x-ray diffraction and x-ray absorption spectroscopy indicate that epitaxial ilmenite-type NiTiO3 films were successfully grown. Furthermore, lattice strain exerted by the sapphire substrate results in a distorted ilmenite structure similar to the LiNbO3-type one. Our results demonstrate the potential of oxide heteroepitaxy to stabilize metastable multiferroic phases that may be difficult to prepare or are inaccessible in the bulk.

    1. Process for growing epitaxial gallium nitride and composite wafers

      DOE Patents [OSTI]

      Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

      2003-05-13

      A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

    2. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Choi, Woo Seok; Lee, Ho Nyung

      2015-05-08

      In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometrymore » study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

    3. Process for recovering organic vapors from air

      DOE Patents [OSTI]

      Baker, Richard W.

      1985-01-01

      A process for recovering and concentrating organic vapor from a feed stream of air having an organic vapor content of no more than 20,000 ppm by volume. A thin semipermeable membrane is provided which has a feed side and a permeate side, a selectivity for organic vapor over air of at least 50, as measured by the ratio of organic vapor permeability to nitrogen permeability, and a permeability of organic vapor of at least 3.times.10.sup.-7 cm.sup.3 (STP) cm/cm.sup.2 sec.cm Hg. The feed stream is passed across the feed side of the thin semipermeable membrane while providing a pressure on the permeate side which is lower than the feed side by creating a partial vacuum on the permeate side so that organic vapor passes preferentially through the membrane to form an organic vapor depleted air stream on the feed side and an organic vapor enriched stream on the permeate side. The organic vapor which has passed through the membrane is compressed and condensed to recover the vapor as a liquid.

    4. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

      SciTech Connect (OSTI)

      Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

      2013-08-19

      Thin AlN layers were grown at 200650 C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

    5. Wick for metal vapor laser

      DOE Patents [OSTI]

      Duncan, David B. (Livermore, CA)

      1992-01-01

      An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

    6. Chemical vapor deposition of sialon

      DOE Patents [OSTI]

      Landingham, Richard L.; Casey, Alton W.

      1982-01-01

      A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

    7. Effect of higher water vapor content on TBC performance

      SciTech Connect (OSTI)

      Pint, Bruce A; Haynes, James A

      2012-01-01

      initial phase of experiments. Compared to dry O{sub 2}, the addition of 10% water vapor decreased the lifetime of MCrAlY by {approx}30% for the conventional CMSX4 substrates. Higher average lifetimes were observed with Hf in the bond coating, but a similar decrease in lifetime was observed when water vapor was added. The addition of Y and La to the superalloy substrate did not change the YSZ lifetime with 10% water vapor. However, increasing water vapor content from 10 to 50% did not further decrease the lifetime of either bond coating with the doped superalloy substrate. Thus, these results suggest that higher water vapor contents cannot explain the derating of syngas-fired turbines, and other factors such as sulfur and ash from imperfect syngas cleanup (or upset conditions) need to be explored. Researchers continue to study effects of water vapor on thermally grown alumina scale adhesion and growth rate, and are looking for bond coating compositions more resistant to oxidation in the presence of water vapor.

    8. Control of flow through a vapor generator

      DOE Patents [OSTI]

      Radcliff, Thomas D.

      2005-11-08

      In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

    9. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

      SciTech Connect (OSTI)

      Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

      2014-12-15

      Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

    10. Cantilever Epitaxy Process Wins R&D 100 Award

      Broader source: Energy.gov [DOE]

      Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

    11. Epitaxial silicide formation on recoil-implanted substrates

      SciTech Connect (OSTI)

      Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

      2005-01-15

      An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

    12. Coupling apparatus for a metal vapor laser

      DOE Patents [OSTI]

      Ball, D.G.; Miller, J.L.

      1993-02-23

      Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

    13. Coupling apparatus for a metal vapor laser

      DOE Patents [OSTI]

      Ball, Don G.; Miller, John L.

      1993-01-01

      Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

    14. Non-Vapor Compression HVAC Technologies Report

      Broader source: Energy.gov [DOE]

      While vapor-compression technologies have served heating, ventilation, and air-conditioning (HVAC) needs very effectively, and have been the dominant HVAC technology for close to 100 years, the conventional refrigerants used in vapor-compression equipment contribute to global climate change when released to the atmosphere. The Building Technologies Office is evaluating low-global warming potential (GWP) alternatives to vapor-compression technologies.

    15. Novel methods of copper vapor laser excitation

      SciTech Connect (OSTI)

      McColl, W.B.; Ching, H.; Bosch, R.; Brake, M.; Gilgenbach, R.

      1990-12-31

      Microwave and intense electron beam excitation of copper vapor are being investigated to be used in copper vapor lasers for isotope separation. Both methods use copper chloride vapor by heating copper chloride. Helium was used as the buffer gas at 2 to 100 torr. In the microwave system, intense copperlines at 510 nm and 578 nm were observed. Initial electron beam results indicate that light emission follows the beam current.

    16. ARM - Field Campaign - Water Vapor IOP

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      govCampaignsWater Vapor IOP ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 2000.09.18 - 2000.10.08 Lead Scientist : Henry Revercomb For data sets, see below. Abstract Scientific hypothesis: 1. Microwave radiometer (MWR) observations of the 22 GHz water vapor line can accurately constrain the total column amount of water vapor (assuming a calibration accuracy of 0.5 degC or better, which

    17. Propane-induced biodegradation of vapor phase trichloroethylene...

      Office of Scientific and Technical Information (OSTI)

      John Carollo Engineers, College Station, TX (United States) Texas A and M Univ., College Station, TX (United States). Dept. of Civil Engineering Publication Date: 1995-05-20 OSTI ...

    18. Vapor phase ethanol carbonylation over Rh supported on zeolite...

      Office of Scientific and Technical Information (OSTI)

      Resource Relation: Journal Name: Applied Catalysis. A, General; Journal Volume: 520; Journal Issue: 06, 2016 Publisher: Elsevier Research Org: Advanced Photon Source (APS), Argonne ...

    19. Growth of epitaxial (Sr,Ba){sub n+1}Ru{sub n}O{sub 3n+1} films

      SciTech Connect (OSTI)

      Schlom, D.G.; Knapp, S.B.; Wozniak, S. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering] [and others

      1997-12-01

      We have grown epitaxial (Sr,Ba) (n+1)Ru(n)O(3n+1) films, n = 1, 2, and infinity, by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase pure films have been mapped out. Resistivity versus temperature measurements show that both a and c axis films of Sr2RuO4 are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.

    20. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

      SciTech Connect (OSTI)

      Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

      2014-10-13

      Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

    1. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

      SciTech Connect (OSTI)

      Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

      2014-01-01

      Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

    2. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

      SciTech Connect (OSTI)

      Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

      2015-01-06

      There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

    3. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

      DOE Patents [OSTI]

      Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

      2004-09-28

      A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

    4. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

      2014-12-03

      Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

    5. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

      DOE Patents [OSTI]

      Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

      2013-02-19

      There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

    6. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product

      SciTech Connect (OSTI)

      Koontz, A; Cadeddu, M

      2012-12-05

      The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 ± 1, 3, 7, and 14 GHz.

    7. Near real time vapor detection and enhancement using aerosol adsorption

      DOE Patents [OSTI]

      Novick, V.J.; Johnson, S.A.

      1999-08-03

      A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

    8. Near real time vapor detection and enhancement using aerosol adsorption

      DOE Patents [OSTI]

      Novick, Vincent J.; Johnson, Stanley A.

      1999-01-01

      A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

    9. Atomic vapor laser isotope separation

      SciTech Connect (OSTI)

      Stern, R.C.; Paisner, J.A.

      1985-11-08

      Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

    10. Stacked vapor fed amtec modules

      DOE Patents [OSTI]

      Sievers, Robert K.

      1989-01-01

      The present invention pertains to a stacked AMTEC module. The invention includes a tubular member which has an interior. The member is comprised of a ion conductor that substantially conducts ions relative to electrons, preferably a beta"-alumina solid electrolyte, positioned about the interior. A porous electrode for conducting electrons and allowing sodium ions to pass therethrough, and wherein electrons and sodium ions recombine to form sodium is positioned about the beta"-alumina solid electrolyte. The electrode is operated at a temperature and a pressure that allows the recombined sodium to vaporize. Additionally, an outer current collector grid for distributing electrons throughout the porous electrode is positioned about and contacts the porous electrode. Also included in the invention is transporting means for transporting liquid sodium to the beta"-alumina solid electrolyte of the tubular member. A transition piece is positioned about the interior of the member and contacts the transporting means. The transition piece divides the member into a first cell and a second cell such that each first and second cell has a beta"-alumina solid electrolyte, a first and second porous electrode and a grid. The transition piece conducts electrons from the interior of the tubular member. There is supply means for supplying sodium to the transporting means. Preferably the supply means is a shell which surrounds the tubular member and is operated at a temperature such that the vaporized sodium condenses thereon. Returning means for returning the condensed sodium from the shell to the transporting means provides a continuous supply of liquid sodium to the transporting means. Also, there are first conducting means for conducting electric current from the transition piece which extends through the shell, and second conducting means for conducting electric current to the grid of the first cell which extends through the shell.