National Library of Energy BETA

Sample records for vapor phase epitaxy

  1. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  2. Growth of vertical-cavity surface emitting lasers by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Hou, H.Q.; Hammons, B.E.; Crawford, M.H.; Lear, K.L.; Choquette, K.D.

    1996-10-01

    We present growth and characterization of visible and near-infrared vertical-cavity surface emitting lasers (VCSELs) grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include growth rate and composition control using an {ital in}{ital situ} normal-incidence reflectometer, comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire composition range, and optimization of ultra-high material uniformity. We also demonstrate our recent achievements of all-AlGaAs VCSELs which include the first room-temperature continuous- wave demonstration of 700-nm red VCSELs and high-efficiency and low- threshold voltage 850-nm VCSELs.

  3. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzn, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}0.24?eV), D3 (E{sub C}0.60?eV), D4 (E{sub C}0.69?eV), D5 (E{sub C}0.96?eV), D7 (E{sub C}1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1??10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}0.12?eV), D5I (E{sub C}0.89?eV), and D6 (E{sub C}1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  4. Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy

    DOE Patents [OSTI]

    Hou, Hong Q.; Coltrin, Michael E.; Choquette, Kent D.

    2001-01-01

    A process for forming an array of vertical cavity optical resonant structures wherein the structures in the array have different detection or emission wavelengths. The process uses selective area growth (SAG) in conjunction with annular masks of differing dimensions to control the thickness and chemical composition of the materials in the optical cavities in conjunction with a metalorganic vapor phase epitaxy (MOVPE) process to build these arrays.

  5. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  6. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  7. Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Perl, Emmett E.; Simon, John; Geisz, John F.; Olavarria, Waldo; Young, Michelle; Duda, Anna; Friedman, Daniel J.; Steiner, Myles A.

    2016-03-29

    AlGaInP solar cells with bandgaps between 1.9 and 2.2 eV are investigated for use in next-generation multijunction photovoltaic devices. This quaternary alloy is of great importance to the development of III-V solar cells with five or more junctions and for cells optimized for operation at elevated temperatures because of the high bandgaps required in these designs. In this work, we explore the conditions for the organometallic vapor-phase epitaxy growth of AlGaInP and study their effects on cell performance. Initial efforts focused on developing ~2.0-eV AlGaInP solar cells with a nominal aluminum composition of 12%. Under the direct spectrum at 1000more » W/m2 (AM1.5D), the best of these samples had an open-circuit voltage of 1.59 V, a bandgap-voltage offset of 440 mV, a fill factor of 88.0%, and an efficiency of 14.8%. We then varied the aluminum composition of the alloy from 0% to 24% and were able to tune the bandgap of the AlGaInP layers from ~1.9 to ~2.2 eV. Furthermore, while the samples with a higher aluminum composition exhibited a reduced quantum efficiency and increased bandgap-voltage offset, the bandgap-voltage offset remained at 500 mV or less, up to a bandgap of ~2.1 eV.« less

  8. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  9. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect (OSTI)

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  10. Computational Fluid Dynamics-Aided Analysis of a Hydride Vapor Phase

    Office of Scientific and Technical Information (OSTI)

    Epitaxy Reactor (Journal Article) | SciTech Connect Computational Fluid Dynamics-Aided Analysis of a Hydride Vapor Phase Epitaxy Reactor Citation Details In-Document Search Title: Computational Fluid Dynamics-Aided Analysis of a Hydride Vapor Phase Epitaxy Reactor Authors: Schulte, Kevin L. ; Simon, John ; Roy, Abhra ; Reedy, Robert C. ; Young, David L. ; Kuech, Thomas F. ; Ptak, Aaron J. Publication Date: 2016-01-15 OSTI Identifier: 1233143 Report Number(s): NREL/JA-5J00-64594 Journal ID:

  11. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K.

    1991-01-01

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  12. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  13. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  14. Liquid-phase compositions from vapor-phase analyses

    SciTech Connect (OSTI)

    Davis, W. Jr. ); Cochran, H.D. )

    1990-02-01

    Arsenic normally is not considered to be a contaminant. However, because arsenic was found in many cylinders of UF{sub 6}, including in corrosion products, a study was performed of the distribution of the two arsenic fluorides, AsF{sub 3} and AsF{sub 5}, between liquid and vapor phases. The results of the study pertain to condensation or vaporization of liquid UF{sub 6}. This study includes use of various experimental data plus many extrapolations necessitated by the meagerness of the experimental data. The results of this study provide additional support for the vapor-liquid equilibrium model of J.M. Prausnitz and his coworkers as a means of describing the distribution of various impurities between vapor and liquid phases of UF{sub 6}. Thus, it is concluded that AsF{sub 3} will tend to concentrate in the liquid phase but that the concentration of AsF{sub 5} in the vapor phase will exceed its liquid-phase concentration by a factor of about 7.5, which is in agreement with experimental data. Because the weight of the liquid phase in a condensation operation may be in the range of thousands of times that of the vapor phase, most of any AsF{sub 5} will be in the liquid phase in spite of this separation factor of 7.5. It may also be concluded that any arsenic fluorides fed into a uranium isotope separation plant will either travel with other low-molecular-weight gases or react with materials present in the plant. 25 refs., 3 figs., 6 tabs.

  15. Propane-induced biodegradation of vapor phase trichloroethylene (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Propane-induced biodegradation of vapor phase trichloroethylene Citation Details In-Document Search Title: Propane-induced biodegradation of vapor phase trichloroethylene Microbial degradation of trichloroethylene (TCE) has been demonstrated under aerobic conditions with propane. The primary objective of this research was to evaluate the feasibility of introducing a vapor phase form of TCE in the presence of propane to batch bioreactors containing a liquid phase

  16. Monitoring of vapor phase polycyclic aromatic hydrocarbons

    DOE Patents [OSTI]

    Vo-Dinh, Tuan; Hajaligol, Mohammad R.

    2004-06-01

    An apparatus for monitoring vapor phase polycyclic aromatic hydrocarbons in a high-temperature environment has an excitation source producing electromagnetic radiation, an optical path having an optical probe optically communicating the electromagnetic radiation received at a proximal end to a distal end, a spectrometer or polychromator, a detector, and a positioner coupled to the first optical path. The positioner can slidably move the distal end of the optical probe to maintain the distal end position with respect to an area of a material undergoing combustion. The emitted wavelength can be directed to a detector in a single optical probe 180.degree. backscattered configuration, in a dual optical probe 180.degree. backscattered configuration or in a dual optical probe 90.degree. side scattered configuration. The apparatus can be used to monitor an emitted wavelength of energy from a polycyclic aromatic hydrocarbon as it fluoresces in a high temperature environment.

  17. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOE Patents [OSTI]

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  18. Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases

    Office of Scientific and Technical Information (OSTI)

    and correlations to first-principles descriptors (Journal Article) | SciTech Connect Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Citation Details In-Document Search This content will become publicly available on December 17, 2016 Title: Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Through alignment of theoretical modeling with

  19. Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mg-Cathodes - Joint Center for Energy Storage Research 7, 2015, Research Highlights Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as Mg-Cathodes Using epitaxial thin film methods, two polymorphs of MgMn2O4 (MMO) are stabilized in tetragonal (MMOT) and cubic (MMOC) phases. The MMOT thin film shows negligible activity with no structural changes, while MMOC (normally found at high temperature or high pressure) exhibits reversible Mg2+ activity with associated changes

  20. Mechanistic aspects of vapor phase lubrication of silicon. (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Mechanistic aspects of vapor phase lubrication of silicon. Citation Details In-Document Search Title: Mechanistic aspects of vapor phase lubrication of silicon. No abstract prepared. Authors: Dugger, Michael Thomas ; Dirk, Shawn M. ; Ohlhausen, James Anthony Publication Date: 2010-10-01 OSTI Identifier: 1028381 Report Number(s): SAND2010-7362C TRN: US201122%%249 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for

  1. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect (OSTI)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ?10{sup 17}?cm{sup ?3} to (25)??10{sup 14}?cm{sup ?3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ?5??10{sup 13}?cm{sup ?3} versus 2.9??10{sup 16}?cm{sup ?3} in the standard samples, with a similar decrease in the electron traps concentration.

  2. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  3. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates anmore » alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

  4. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    SciTech Connect (OSTI)

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.

  5. The role of polymer formation during vapor phase lubrication of silicon.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect The role of polymer formation during vapor phase lubrication of silicon. Citation Details In-Document Search Title: The role of polymer formation during vapor phase lubrication of silicon. The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. With a sufficient concentration of pentanol vapor present, sliding of a silica ball on an oxidized silicon wafer can proceed with no measurable wear. The initial results of time-of-flight

  6. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jeen, Hyoung Jeen; Lee, Ho Nyung

    2015-12-18

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5thin films and performed post-annealing at various temperatures for topotacticmore » conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.« less

  7. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    SciTech Connect (OSTI)

    Jeen, Hyoung Jeen; Lee, Ho Nyung

    2015-12-18

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  8. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  9. Vapor phase elemental sulfur amendment for sequestering mercury in contaminated soil

    DOE Patents [OSTI]

    Looney, Brian B.; Denham, Miles E.; Jackson, Dennis G.

    2014-07-08

    The process of treating elemental mercury within the soil is provided by introducing into the soil a heated vapor phase of elemental sulfur. As the vapor phase of elemental sulfur cools, sulfur is precipitated within the soil and then reacts with any elemental mercury thereby producing a reaction product that is less hazardous than elemental mercury.

  10. The role of polymer formation during vapor phase lubrication...

    Office of Scientific and Technical Information (OSTI)

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. ... The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that ...

  11. Underwater vapor phase burning of aluminum particles and on aluminum ignition during steam explosions

    SciTech Connect (OSTI)

    Epstein, M. )

    1991-09-01

    Recently reported experimental studies on aluminum-water steam explosions indicate that there may be a critical metal temperature at which the process changes over from a physical explosion to one which is very violent and involves the rapid liberation of chemical energy. In this report we examine the hypothesis that vapor-phase burning of aluminum is a necessary condition for the occurrence of such ignition-type'' steam explosions. An available two-phase stagnation flow film-boiling model is used to calculate the steam flux to the vaporizing aluminum surface. Combining this calculation with the notion that there is an upper limit to the magnitude of the metal vaporization rate at which the reaction regime must change from vapor phase to surface burning, leads to prediction of the critical metal surface temperature below which vapor phase burning is impossible. The critical temperature is predicted for both the aluminum-water pre-mixture configuration in which coarse drops of aluminum are falling freely through water and for the finely-fragmented aluminum drops in the wake of the pressure shock that triggers'' the explosion. Vapor phase burning is predicted to be possible during the pre-mixture phase but not very likely during the trigger phase of a steam explosion. The implications of these findings in terms of the validity of the hypothesis that ignition may begin with the vapor phase burning of aluminum is discussed. Recently postulated, alternative mechanisms of underwater aluminum ignition are also discussed.

  12. Underwater vapor phase burning of aluminum particles and on aluminum ignition during steam explosions

    SciTech Connect (OSTI)

    Epstein, M.

    1991-09-01

    Recently reported experimental studies on aluminum-water steam explosions indicate that there may be a critical metal temperature at which the process changes over from a physical explosion to one which is very violent and involves the rapid liberation of chemical energy. In this report we examine the hypothesis that vapor-phase burning of aluminum is a necessary condition for the occurrence of such ``ignition-type`` steam explosions. An available two-phase stagnation flow film-boiling model is used to calculate the steam flux to the vaporizing aluminum surface. Combining this calculation with the notion that there is an upper limit to the magnitude of the metal vaporization rate at which the reaction regime must change from vapor phase to surface burning, leads to prediction of the critical metal surface temperature below which vapor phase burning is impossible. The critical temperature is predicted for both the aluminum-water pre-mixture configuration in which coarse drops of aluminum are falling freely through water and for the finely-fragmented aluminum drops in the wake of the pressure shock that ``triggers`` the explosion. Vapor phase burning is predicted to be possible during the pre-mixture phase but not very likely during the trigger phase of a steam explosion. The implications of these findings in terms of the validity of the hypothesis that ignition may begin with the vapor phase burning of aluminum is discussed. Recently postulated, alternative mechanisms of underwater aluminum ignition are also discussed.

  13. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions

    SciTech Connect (OSTI)

    Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

    2014-08-18

    Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  14. Electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films

    SciTech Connect (OSTI)

    Xie, Y. J.; Scafetta, M. D.; Moon, E. J.; Krick, A. L.; Sichel-Tissot, R. J.; May, S. J.

    2014-08-11

    The electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films is presented. The films were grown on SrTiO{sub 3} using molecular beam epitaxy with post-growth annealing to minimize oxygen vacancies. Insulating behavior is observed from x?=?00.9, with metallic conduction only present for x?=?1.0. While the La-rich compounds exhibit polaron conduction over all temperatures measured, the Sr-rich films exhibit an electronic phase transition within the compositional window of x?=?0.490.9 as revealed by temperature-dependent resistivity measurements. The transition temperatures are found to decrease with increasing Sr content. The constructed phase diagram is discussed in the context of other 3d e{sub g} perovskite systems including manganites and cobaltites.

  15. Engineering work plan for tank 241-C-103 vapor phase characterization (ECN 613188). Revision 1

    SciTech Connect (OSTI)

    Conrad, R.B.

    1994-10-05

    The tasks described by this work plan have been completed. The purpose of this revision it to document what actually occurred during the performance of this work plan. The scope was and is limited to phases 1 and 2 as described in the program plan, revision 1. Phases 1 and 2 include the tank 241-C-103 (C-103) vapor. For economic and as low as reasonably achievable (ALARA) reasons, we will limit our scope to characterize the C-103 vapor phase for the categories that could be expected to impact facility worker safety from a toxicological and flammability standpoint. In anticipation that a vapor treatment system may be required, categories necessary for design will also be included. It will be the intent of the C-103 vapor characterization program to: (1) identify the substances from the above list of categories that are applicable to the issues involving C-103, and (2) implement a phased plan which will develop the organic vapor phase characterization method and then characterize the organics and the other selected substances to the required quantitative certainty.

  16. MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

    SciTech Connect (OSTI)

    Dugger, Michael T.; Asay, David B.; Kim, Seong H.

    2008-01-01

    Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

  17. Condensed phase conversion and growth of nanorods and other materials instead of from vapor

    DOE Patents [OSTI]

    Geohegan, David B. (Knoxville, TN); Seals, Roland D. (Oak Ridge, TN); Puretzky, Alex A. (Knoxville, TN); Fan, Xudong (Oak Ridge, TN)

    2010-10-19

    Compositions, systems and methods are described for condensed phase conversion and growth of nanorods and other materials. A method includes providing a condensed phase matrix material; and activating the condensed phase matrix material to produce a plurality of nanorods by condensed phase conversion and growth from the condensed phase matrix material instead of from vapor. The compositions are very strong. The compositions and methods provide advantages because they allow (1) formation rates of nanostructures necessary for reasonable production rates, and (2) the near net shaped production of component structures.

  18. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOE Patents [OSTI]

    Aytug, Tolga; Paranthaman, Mariappan Parans; Polat, Ozgur

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  19. Liquid-phase and vapor-phase dehydration of organic/water solutions

    DOE Patents [OSTI]

    Huang, Yu; Ly, Jennifer; Aldajani, Tiem; Baker, Richard W.

    2011-08-23

    Processes for dehydrating an organic/water solution by pervaporation or vapor separation using fluorinated membranes. The processes are particularly useful for treating mixtures containing light organic components, such as ethanol, isopropanol or acetic acid.

  20. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1992-02-25

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  1. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1986-12-30

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  2. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  3. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  4. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  5. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  6. On the existence of vapor-liquid phase transition in dusty plasmas

    SciTech Connect (OSTI)

    Kundu, M.; Sen, A.; Ganesh, R. [Institute for Plasma Research, Bhat, Gandhinagar 382 428, Gujarat (India); Avinash, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2014-10-15

    The phenomenon of phase transition in a dusty-plasma system (DPS) has attracted some attention in the past. Earlier Farouki and Hamaguchi [J. Chem. Phys. 101, 9876 (1994)] have demonstrated the existence of a liquid to solid transition in DPS where the dust particles interact through a Yukawa potential. However, the question of the existence of a vapor-liquid (VL) transition in such a system remains unanswered and relatively unexplored so far. We have investigated this problem by performing extensive molecular dynamics simulations which show that the VL transition does not have a critical curve in the pressure versus volume diagram for a large range of the Yukawa screening parameter ? and the Coulomb coupling parameter ?. Thus, the VL phase transition is found to be super-critical, meaning that this transition is continuous in the dusty plasma model given by Farouki and Hamaguchi. We provide an approximate analytic explanation of this finding by means of a simple model calculation.

  7. Comparative study of polar and semipolar (112?2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect (OSTI)

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112?2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750C), the indium content (<15%) of the (112?2) and (0001) InGaN layers was similar. However, for temperatures less than 750C, the indium content of the (112?2) InGaN layers (15%26%) were generally lower than those with (0001) orientation (15%32%). The compositional deviation was attributed to the different strain relaxations between the (112?2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112?2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112?2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(5060) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  8. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  9. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect (OSTI)

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  10. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOE Patents [OSTI]

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  11. Method for the generation of variable density metal vapors which bypasses the liquidus phase

    DOE Patents [OSTI]

    Kunnmann, Walter; Larese, John Z.

    2001-01-01

    The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

  12. Structural phase diagram for ultra-thin epitaxial Fe 3 O 4  / MgO(0 0 1) films: thickness and oxygen pressure dependence

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alraddadi, S.; Hines, W.; Yilmaz, T.; Gu, G. D.; Sinkovic, B.

    2016-02-19

    A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe3O4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10-7 torr to 1 × 10-5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED) and x-ray photoemission spectroscopymore » (XPS), respectively. Moreover, the quality of the epitaxial Fe3O4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe3O4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe3O4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

  13. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    SciTech Connect (OSTI)

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DSTs is given at the end of this report.

  14. Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol

    SciTech Connect (OSTI)

    Sun, Junming; Karim, Ayman M.; Zhang, He; Kovarik, Libor; Li, Xiaohong S.; Hensley, Alyssa; McEwen, Jean-Sabin; Wang, Yong

    2013-10-01

    Abstract Carbon supported metal catalysts (Cu/C, Fe/C, Pd/C, Pt/C, PdFe/C and Ru/C) have been prepared, characterized and tested for vapor-phase hydrodeoxygenation (HDO) of guaiacol (GUA) at atmospheric pressure. Phenol was the major intermediate on all catalysts. Over the noble metal catalysts saturation of the aromatic ring was the major pathway observed at low temperature (250 C), forming predominantly cyclohexanone and cyclohexanol. Substantial ring opening reaction was observed on Pt/C and Ru/C at higher reaction temperatures (e.g., 350 C). Base metal catalysts, especially Fe/C, were found to exhibit high HDO activity without ring-saturation or ring-opening with the main products being benzene, phenol along with small amounts of cresol, toluene and trimethylbenzene (TMB). A substantial enhancement in HDO activity was observed on the PdFe/C catalysts. Compared with Fe/C, the yield to oxygen-free aromatic products (i.e., benzene/toluene/TMB) on PdFe/C increased by a factor of four at 350 C, and by approximately a factor of two (83.2% versus 43.3%) at 450 C. The enhanced activity of PdFe/C is attributed to the formation of PdFe alloy as evidenced by STEM, EDS and TPR.

  15. The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

    2014-02-05

    The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

  16. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    SciTech Connect (OSTI)

    Vinokurov, D. A.; Ladugin, M. A.; Lyutetskii, A. V.; Marmalyuk, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Slipchenko, S. O. Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Shashkin, I. S.; Averkiev, N. S.; Tarasov, I. S.

    2010-06-15

    Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

  17. The role of polymer formation during vapor phase lubrication of silicon.

    SciTech Connect (OSTI)

    Dugger, Michael Thomas; Dirk, Shawn M.; Ohlhausen, James Anthony

    2010-10-01

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. With a sufficient concentration of pentanol vapor present, sliding of a silica ball on an oxidized silicon wafer can proceed with no measurable wear. The initial results of time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of wear surfaces revealed a reaction product having thickness on the order of a monolayer, and with an ion spectrum that included fragments having molecular weights of 200 or more that occurred only inside the wear tracks. The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that reactions of adsorbed alcohols on the wearing surfaces allowed polymerization of the alcohols to form higher molecular weight species. In addition to pin-on-disk studies, lubrication of silicon surfaces with pentanol vapors has also been demonstrated using MicroElectroMechanical Systems (MEMS) devices. Recent investigations of the reaction mechanisms of the alcohol molecules with the oxidized silicon surfaces have shown that wearless sliding requires a concentration of the alcohol vapor that is dependent upon the contact stress during sliding, with higher stress requiring a greater concentration of alcohol. Different vapor precursors including those with acid functionality, olefins, and methyl termination also produce polymeric reaction products, and can lubricate the silica surfaces. Doping the operating environment with oxygen was found to quench the formation of the polymeric reaction product, and demonstrates that polymer formation is not necessary for wearless sliding.

  18. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    SciTech Connect (OSTI)

    Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2005-03-11

    This report summarizes work performed on this project from October 2004 through March 2005. In previous work, a surfactant modified zeolite (SMZ) was shown to be an effective system for removing BTEX contaminants from produced water. Additional work on this project demonstrated that a compost-based biofilter could biodegrade the BTEX contaminants found in the SMZ regeneration waste gas stream. However, it was also determined that the BTEX concentrations in the waste gas stream varied significantly during the regeneration period and the initial BTEX concentrations were too high for the biofilter to handle effectively. A series of experiments were conducted to determine the feasibility of using a passive adsorption column placed upstream of the biofilter to attenuate the peak gas-phase VOC concentrations delivered to the biofilter during the SMZ regeneration process. In preparation for the field test of the SMZ/VPB treatment system in New Mexico, a pilot-scale SMZ system was also designed and constructed during this reporting period. Finally, a cost and feasibility analysis was also completed. To investigate the merits of the passive buffering system during SMZ regeneration, two adsorbents, SMZ and granular activated carbon (GAC) were investigated in flow-through laboratory-scale columns to determine their capacity to handle steady and unsteady VOC feed conditions. When subjected to a toluene-contaminated air stream, the column containing SMZ reduced the peak inlet 1000 ppmv toluene concentration to 630 ppmv at a 10 second contact time. This level of buffering was insufficient to ensure complete removal in the downstream biofilter and the contact time was longer than desired. For this reason, using SMZ as a passive buffering system for the gas phase contaminants was not pursued further. In contrast to the SMZ results, GAC was found to be an effective adsorbent to handle the peak contaminant concentrations that occur early during the SMZ regeneration process. At a one second residence time, the GAC bed reduced peak contaminant concentrations by 97%. After the initial peak, the inlet VOC concentration in the SMZ regeneration gas stream drops exponentially with time. During this period, the contaminants on the GAC subsequently desorbed at a nearly steady rate over the next 45 hours resulting in a relatively steady effluent concentration of approximately 25 ppm{sub v}. This lower concentration is readily degradable by a downstream vapor phase biofilter (VPB) and the steady nature of the feed stream will prevent the biomass in the VPB from enduring starvation conditions between SMZ regeneration cycles. Repetitive sorption and desorption cycles that would be expected in the field were also investigated. It was determined that although the GAC initially lost some VOC sorption capacity, the adsorption and desorption profiles stabilized after approximately 6 cycles indicating that a GAC bed should be suitable for continuous operation. In preparation for the pilot field testing of the SMZ/VPB system, design, ''in-house'' construction and testing of the field system were completed during this project period. The design of the SMZ system for the pilot test was based on previous investigations by the PI's in Wyoming, 2002 and on analyses of the produced water at the field site in New Mexico. The field tests are scheduled for summer, 2005. A cost survey, feasibility of application and cost analyses were completed to investigate the long term effectiveness of the SMZ/VPB system as a method of treating produced water for re-use. Several factors were investigated, including: current costs to treat and dispose of produced water, end-use water quality requirements, and state and federal permitting requirements.

  19. TREATMENT OF PRODUCED WATERS USING A SURFACTANT MODIFIED ZEOLITE/VAPOR PHASE BIOREATOR SYSTEM

    SciTech Connect (OSTI)

    LYNN E. KATZ; KERRY A. KINNEY; R.S. BOWMAN; E.J. SULLIVAN

    2003-10-01

    Co-produced water from the oil and gas industry is by some estimates the largest single waste stream in the country, aside from nonhazardous industrial wastes. Characteristics of produced water include high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component, and chemicals added during the oil-production process. While most of the produced water is disposed via reinjection, some of them must be treated to remove organic constituents before the water is discharged. An efficient, cost-effective treatment technology is needed to remove these constituents. Surfactant-modified zeolite (SMZ) has been used successfully to treat contaminated ground water for organic and inorganic constituents. In addition, the low cost of natural zeolites makes their use attractive in water-treatment applications. Our previous DOE research work (DE-AC26-99BC15221) demonstrated that SMZ could successfully remove BTEX compounds from the produced water. In addition, SMZ could be regenerated through a simple air sparging process. The primary goal of this project is to develop a robust SMZ/VPB treatment system to efficiently remove the organic constituents from produced water in a cost-effective manner. This report summarizes work of this project from March 2003 through September 2003. We have continued our investigation of SMZ regeneration from our previous DOE project. Ten saturation/stripping cycles have been completed for SMZ columns saturated with BTEX compounds. The results suggest that BTEX sorption capacity is not lost after ten saturation/regeneration cycles. The composition of produced water from a site operated by Crystal Solutions Ltd. in Wyoming has been characterized and was used to identify key semi-volatile components. Isotherms with selected semi-volatile components have been initiated and preliminary results have been obtained. The experimental vapor phase bioreactors for this project have been designed and assembled to treat the off-gas from the SMZ regeneration process. These columns will be used both in the laboratory and in the proposed field testing to be conducted next year. Innocula for the columns that degrade all of the BTEX columns have been developed.

  20. Treatment of Produced Water Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    SciTech Connect (OSTI)

    Lynn E. Katz; Kerry A. Kinney; Robert S. Bowman; Enid J. Sullivan; Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Craig R. Altare

    2006-01-31

    Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. Produced waters typically contain a high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component as well as chemicals added during the oil-production process. It has been estimated that a total of 14 billion barrels of produced water were generated in 2002 from onshore operations (Veil, 2004). Although much of this produced water is disposed via reinjection, environmental and cost considerations can make surface discharge of this water a more practical means of disposal. In addition, reinjection is not always a feasible option because of geographic, economic, or regulatory considerations. In these situations, it may be desirable, and often necessary from a regulatory viewpoint, to treat produced water before discharge. It may also be feasible to treat waters that slightly exceed regulatory limits for re-use in arid or drought-prone areas, rather than losing them to reinjection. A previous project conducted under DOE Contract DE-AC26-99BC15221 demonstrated that surfactant modified zeolite (SMZ) represents a potential treatment technology for produced water containing BTEX. Laboratory and field experiments suggest that: (1) sorption of benzene, toluene, ethylbenzene and xylenes (BTEX) to SMZ follows linear isotherms in which sorption increases with increasing solute hydrophobicity; (2) the presence of high salt concentrations substantially increases the capacity of the SMZ for BTEX; (3) competitive sorption among the BTEX compounds is negligible; and, (4) complete recovery of the SMZ sorption capacity for BTEX can be achieved by air sparging the SMZ. This report summarizes research for a follow on project to optimize the regeneration process for multiple sorption/regeneration cycles, and to develop and incorporate a vapor phase bioreactor (VPB) system for treatment of the off-gas generated during air sparging. To this end, we conducted batch and column laboratory SMZ and VPB experiments with synthetic and actual produced waters. Based on the results of the laboratory testing, a pilot scale study was designed and conducted to evaluate the combined SMZ/VPB process. An economic and regulatory feasibility analysis was also completed as part of the current study to assess the viability of the process for various water re-use options.

  1. Vapor-liquid-solid epitaxial growth of Si1-xGex alloy nanowires. Composition dependence on precursor reactivity and morphology control for vertical forests

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, S. G.; Manandhar, P.; Picraux, S. T.

    2015-07-07

    The growth of high-density group IV alloy nanowire forests is critical for exploiting their unique functionalities in many applications. Here, the compositional dependence on precursor reactivity and optimized conditions for vertical growth are studied for Si1- x Ge x alloy nanowires grown by the vapor-liquid-solid method. The nanowire composition versus gas partial-pressure ratio for germane-silane and germane-disilane precursor combinations is obtained at 350°C over a wide composition range (0.05 ≤ x ≤ 0.98) and a generalized model to predict composition for alloy nanowires is developed based on the relative precursor partial pressures and reactivity ratio. In combination with germane, silanemore » provides more precise compositional control at high Ge concentrations (x > 0.7), whereas disilane greatly increases the Si concentration for a given gas ratio and enables more precise alloy compositional control at small Ge concentrations (x < 0.3). Vertically oriented, non-kinking nanowire forest growth on Si (111) substrates is then discussed for silane/germane over a wide range of compositions, with temperature and precursor partial pressure optimized by monitoring the nanowire growth front using in-situ optical reflectance. For high Ge compositions (x ≈ 0.9), a “two-step” growth approach with nucleation at higher temperatures results in nanowires with high-density and uniform vertical orientation. Furthermore, increasing Si content (x ≈ 0.8), the optimal growth window is shifted to higher temperatures, which minimizes nanowire kinking morphologies. For Si-rich Si1- x Ge x alloys (x ≈ 0.25), vertical nanowire growth is enhanced by single-step, higher-temperature growth at reduced pressures.« less

  2. Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy

    SciTech Connect (OSTI)

    Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

    2010-05-01

    Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

  3. A low phase noise microwave frequency synthesis for a high-performance cesium vapor cell atomic clock

    SciTech Connect (OSTI)

    Franois, B.; Boudot, R.; Calosso, C. E.; Danet, J. M.

    2014-09-15

    We report the development, absolute phase noise, and residual phase noise characterization of a 9.192?GHz microwave frequency synthesis chain devoted to be used as a local oscillator in a high-performance cesium vapor cell atomic clock based on coherent population trapping (CPT). It is based on frequency multiplication of an ultra-low phase noise 100 MHz oven-controlled quartz crystal oscillator using a nonlinear transmission line-based chain. Absolute phase noise performances of the 9.192?GHz output signal are measured to be ?42, ?100, ?117 dB?rad{sup 2}/Hz and ?129 dB?rad{sup 2}/Hz at 1 Hz, 100 Hz, 1 kHz, and 10 kHz offset frequencies, respectively. Compared to current results obtained in a state-of-the-art CPT-based frequency standard developed at LNE-SYRTE, this represents an improvement of 8 dB and 10 dB at f = 166 Hz and f = 10 kHz, respectively. With such performances, the expected Dick effect contribution to the atomic clock short term frequency stability is reported at a level of 6.2 10{sup ?14} at 1 s integration time, that is a factor 3 higher than the atomic clock shot noise limit. Main limitations are pointed out.

  4. Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper...

    Office of Scientific and Technical Information (OSTI)

    Kinetics of oxygen surface exchange on epitaxial Ruddlesden-Popper phases and correlations to first-principles descriptors Citation Details In-Document Search This content will ...

  5. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  6. Comment on "Tunable generation and adsorption of energetic compounds in the vapor phase at trace levels: A tool for testing and developing sensitive and selective substrates for explosive detection"

    SciTech Connect (OSTI)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2013-02-13

    The evaluation of developed technologies and research on new detection approaches require the ability to generate explosive vapors in the gas phase. In this correspondence, the authors comment on a technical note describing a vaopr generator, discuss safety issues associated with explosives for vapor generators, and provide a concise review of vapor generators for explosive compounds. Approaches to measuring or monitoring the output of a vapor generators are also discussed.

  7. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  8. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  9. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  10. NOVEL PROCESS FOR REMOVAL AND RECOVERY OF VAPOR-PHASE MERCURY

    SciTech Connect (OSTI)

    Craig S. Turchi

    2000-09-29

    The goal of this project is to investigate the use of a regenerable sorbent for removing and recovering mercury from the flue gas of coal-fired power plants. The process is based on the sorption of mercury by noble metals and the thermal regeneration of the sorbent, recovering the desorbed mercury in a small volume for recycling or disposal. The project was carried out in two phases, covering five years. Phase I ran from September 1995 through September 1997 and involved development and testing of sorbent materials and field tests at a pilot coal-combustor. Phase II began in January 1998 and ended September 2000. Phase II culminated with pilot-scale testing at a coal-fired power plant. The use of regenerable sorbents holds the promise of capturing mercury in a small volume, suitable for either stable disposal or recycling. Unlike single-use injected sorbents such as activated carbon, there is no impact on the quality of the fly ash. During Phase II, tests were run with a 20-acfm pilot unit on coal-combustion flue gas at a 100 lb/hr pilot combustor and a utility boiler for four months and six months respectively. These studies, and subsequent laboratory comparisons, indicated that the sorbent capacity and life were detrimentally affected by the flue gas constituents. Sorbent capacity dropped by a factor of 20 to 35 during operations in flue gas versus air. Thus, a sorbent designed to last 24 hours between recycling lasted less than one hour. The effect resulted from an interaction between SO{sub 2} and either NO{sub 2} or HCl. When SO{sub 2} was combined with either of these two gases, total breakthrough was seen within one hour in flue gas. This behavior is similar to that reported by others with carbon adsorbents (Miller et al., 1998).

  11. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  12. InAs quantum dot growth on Al{sub x}Ga{sub 1?x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    SciTech Connect (OSTI)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mouro, R. T.; Pires, M. P.; Micha, D. N.

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1?x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x?=?0.3 and InAs dot vertical dimensions of 5?nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  13. Epitaxial strengthening of crystals

    DOE Patents [OSTI]

    Morris, Robert C.; Marion, II, John E.; Gaultieri, Devlin M.

    1988-01-01

    An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

  14. Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics

    SciTech Connect (OSTI)

    Skibinski, Jakub; Wejrzanowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Woloska 141, 02507 Warsaw (Poland); Caban, Piotr [Institute of Electronic Materials Technology, Wolczynska 133, 01919 Warsaw (Poland); Kurzydlowski, Krzysztof J. [Warsaw University of Technology, Faculty of Materials Science and Engineering Woloska, 141, 02507 Warsaw (Poland)

    2014-10-06

    In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Epitaxial growth means crystal growth that progresses while inheriting the laminar structure and the orientation of substrate crystals. One of the technological problems is to obtain homogeneous growth rate over the main deposit area. Since there are many agents influencing reaction on crystal area such as temperature, pressure, gas flow or reactor geometry, it is difficult to design optimal process. According to the fact that it's impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during crystal growth, modeling is the only solution to understand the process precisely. Numerical simulations allow to understand the epitaxial process by calculation of heat and mass transfer distribution during growth of gallium nitride. Including chemical reactions in numerical model allows to calculate the growth rate of the substrate and estimate the optimal process conditions for obtaining the most homogeneous product.

  15. Cantilever epitaxial process

    DOE Patents [OSTI]

    Ashby, Carol I.; Follstaedt, David M.; Mitchell, Christine C.; Han, Jung

    2003-07-29

    A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

  16. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect (OSTI)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  17. Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels, Phase 2: Evaluations of Field Samples and Laboratory Blends

    SciTech Connect (OSTI)

    Gardiner, D. P.; Bardon, M. F.; LaViolette, M.

    2010-04-01

    Study to measure the flammability of gasoline/ethanol fuel vapors at low ambient temperatures and develop a mathematical model to predict temperatures at which flammable vapors were likely to form.

  18. Vaporization of zinc from scrap

    SciTech Connect (OSTI)

    Ozturk, B.; Fruehan, R.J.

    1996-12-31

    The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

  19. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  20. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  1. Epitaxial CoSi2 on MOS devices

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  2. Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

  3. Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence

    Office of Scientific and Technical Information (OSTI)

    for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] (Journal Article) | SciTech Connect Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] Citation Details In-Document Search Title: Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)] No abstract prepared. Authors: Constantin, Costel

  4. ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable

    Office of Scientific and Technical Information (OSTI)

    layered hexagonal phase (Journal Article) | SciTech Connect ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Citation Details In-Document Search Title: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Alloy formation in ScGaN is explored using rf molecular beam epitaxy over the Sc fraction range x=0-100%. Optical and structural analysis show separate regimes of growth, namely (I) wurtzitelike but

  5. Structure and magnetism of epitaxial rare-earth-transition-metal films

    SciTech Connect (OSTI)

    Fullerton, E.E.; Sowers, C.H.; Pearson, J.P.; Bader, S.D.

    1996-10-01

    Growth of epitaxial transition-metal superlattices; has proven essential in elucidating the role of crystal orientation and structure on magnetic properties such as giant magnetoresistance, interlayer coupling, and magnetic surface anisotropies. Extending these studies to the growth of epitaxial rare earth-transition metal (RE-TM) films and superlattices promises to play an equally important role in exploring and optimizing the properties of hard magnets. For instance, Skomski and Coey predict that a giant energy product (120 MG Oe) is possible in multilayer structures consisting of aligned hard-magnet layers exchanged coupled with soft-phase layers with high magnetization. Epitaxy provides one route to synthesizing such exchange-hardened magnets on controlled length scales. Epitaxial growth also allows the magnetic properties to be tailored by controlling the crystal orientation and the anisotropies of the magnetic layers and holds the possibility of stabilizing metastable phases. This paper describes the epitaxy and magnetic properties for several alloys.

  6. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

    SciTech Connect (OSTI)

    Harmand, J.C.; Patriarche, G.; Pere-Laperne, N.; Merat-Combes, M-N.; Travers, L.; Glas, F.

    2005-11-14

    GaAs nanowires were grown by molecular-beam epitaxy on (111)B oriented surfaces, after the deposition of Au nanoparticles. Different growth durations and different growth terminations were tested. After the growth of the nanowires, the structure and the composition of the metallic particles were analyzed by transmission electron microscopy and energy dispersive x-ray spectroscopy. We identified three different metallic compounds: the hexagonal {beta}{sup '}Au{sub 7}Ga{sub 2} structure, the orthorhombic AuGa structure, and an almost pure Au face centered cubic structure. We explain how these different solid phases are related to the growth history of the samples. It is concluded that during the wire growth, the metallic particles are liquid, in agreement with the generally accepted vapor-liquid-solid mechanism. In addition, the analysis of the wire morphology indicates that Ga adatoms migrate along the wire sidewalls with a mean length of about 3 {mu}m.

  7. Portable vapor diffusion coefficient meter

    DOE Patents [OSTI]

    Ho, Clifford K.

    2007-06-12

    An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

  8. Long Term Field Development of a Surfactant Modified Zeolite/Vapor Phase Bioreactor System for Treatment of Produced Waters for Power Generation

    SciTech Connect (OSTI)

    Lynn Katz; Kerry Kinney; Robert Bowman; Enid Sullivan; Soondong Kwon; Elaine Darby; Li-Jung Chen; Craig Altare

    2007-12-31

    The main goal of this research was to investigate the feasibility of using a combined physicochemical/biological treatment system to remove the organic constituents present in saline produced water. In order to meet this objective, a physical/chemical adsorption process was developed and two separate biological treatment techniques were investigated. Two previous research projects focused on the development of the surfactant modified zeolite adsorption process (DE-AC26-99BC15221) and development of a vapor phase biofilter (VPB) to treat the regeneration off-gas from the surfactant modified zeolite (SMZ) adsorption system (DE-FC26-02NT15461). In this research, the SMZ/VPB was modified to more effectively attenuate peak loads and to maintain stable biodegradation of the BTEX constituents from the produced water. Specifically, a load equalization system was incorporated into the regeneration flow stream. In addition, a membrane bioreactor (MBR) system was tested for its ability to simultaneously remove the aromatic hydrocarbon and carboxylate components from produced water. The specific objectives related to these efforts included the following: (1) Optimize the performance VPBs treating the transient loading expected during SMZ regeneration: (a) Evaluate the impact of biofilter operating parameters on process performance under stable operating conditions. (b) Investigate how transient loads affect biofilter performance, and identify an appropriate technology to improve biological treatment performance during the transient regeneration period of an SMZ adsorption system. (c) Examine the merits of a load equalization technology to attenuate peak VOC loads prior to a VPB system. (d) Evaluate the capability of an SMZ/VPB to remove BTEX from produced water in a field trial. (2) Investigate the feasibility of MBR treatment of produced water: (a) Evaluate the biodegradation of carboxylates and BTEX constituents from synthetic produced water in a laboratory-scale MBR. (b) Evaluate the capability of an SMZ/MBR system to remove carboxylates and BTEX from produced water in a field trial. Laboratory experiments were conducted to provide a better understanding of each component of the SMZ/VPB and SMZ/MBR process. Laboratory VPB studies were designed to address the issue of influent variability and periodic operation (see DE-FC26-02NT15461). These experiments examined multiple influent loading cycles and variable concentration loadings that simulate air sparging as the regeneration option for the SMZ system. Two pilot studies were conducted at a produced water processing facility near Farmington, New Mexico. The first field test evaluated SMZ adsorption, SMZ regeneration, VPB buffering, and VPB performance, and the second test focused on MBR and SMZ/MBR operation. The design of the field studies were based on the results from the previous field tests and laboratory studies. Both of the biological treatment systems were capable of removing the BTEX constituents in the laboratory and in the field over a range of operating conditions. For the VPB, separation of the BTEX constituents from the saline aqueous phase yielded high removal efficiencies. However, carboxylates remained in the aqueous phase and were not removed in the combined VPB/SMZ system. In contrast, the MBR was capable of directly treating the saline produced water and simultaneously removing the BTEX and carboxylate constituents. The major limitation of the MBR system is the potential for membrane fouling, particularly when the system is treating produced water under field conditions. The combined process was able to effectively pretreat water for reverse osmosis treatment and subsequent downstream reuse options including utilization in power generation facilities. The specific conclusions that can be drawn from this study are summarized.

  9. Martensite transformation of epitaxial Ni-Ti films

    SciTech Connect (OSTI)

    Buschbeck, J.; Kozhanov, A.; Kawasaki, J. K.; James, R. D.; Palmstroem, C. J.

    2011-05-09

    The structure and phase transformations of thin Ni-Ti shape memory alloy films grown by molecular beam epitaxy are investigated for compositions from 43 to 56 at. % Ti. Despite the substrate constraint, temperature dependent x-ray diffraction and resistivity measurements reveal reversible, martensitic phase transformations. The results suggest that these occur by an in-plane shear which does not disturb the lattice coherence at interfaces.

  10. Structural consequences of hydrogen intercalation of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    of epitaxial graphene on SiC(0001) Citation Details In-Document Search Title: Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Authors: ...

  11. Room temperature photoluminescence from In{sub x}Al{sub (1?x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 1012?nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1?x)}N were comparatively investigated for indium compositions ranging from x?=?0.092 to 0.235, including x?=?0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  12. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect (OSTI)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  13. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  14. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, John P.; Larson, Ronald A.; Goodrich, Lorenzo D.; Hall, Harold J.; Stoddard, Billy D.; Davis, Sean G.; Kaser, Timothy G.; Conrad, Frank J.

    1995-01-01

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

  15. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

    DOE Patents [OSTI]

    Norman, Andrew G.; Olson, Jerry M.

    2007-06-12

    Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

  16. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  17. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  18. ARM Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ARM Water Vapor IOP The SGP CART site will host the third ARM water vapor IOP on September 18-October 8, 2000. The CART site is home to a powerful array of instruments capable of measuring water vapor, making it a prime location for research of this type. The first water vapor IOP, conducted in September 1996, focused on using instruments to measure water vapor and determining the accuracy and calibration of each instrument. The second water vapor IOP, held in September and October of 1997,

  19. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  20. Method of depositing epitaxial layers on a substrate

    DOE Patents [OSTI]

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  1. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value...

    Office of Scientific and Technical Information (OSTI)

    G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product Citation Details In-Document Search Title: G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) ...

  2. ARM - Water Vapor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Vapor Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global Warming FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox Lesson Plans Water Vapor Water vapor is the most effective, fastest changing, and least understood of the greenhouse gases. Water vapor is a powerful greenhouse gas; as a matter of fact, it is the dominant greenhouse gas. But scientists don't

  3. Epitaxial Single Crystal Nanostructures for Batteries & PVs ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Lithium Sulfur Batteries Better Ham & Cheese: Enhanced Anodes and Cathodes for Fuel Cells Epitaxial Single Crystal Nanostructures for Batteries & PVs High Performance ...

  4. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  5. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  6. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    Conference: Epitaxial Growth of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium ...

  7. Epitaxial ternary nitride thin films prepared by a chemical solution...

    Office of Scientific and Technical Information (OSTI)

    Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical ...

  8. Controlled Covalent Modification of Epitaxial Single Layer Graphene...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlled Covalent Modification of Epitaxial Single Layer Graphene on ... Title: Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC ...

  9. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Weatherize » Moisture Control » Vapor Barriers or Vapor Diffusion Retarders Vapor Barriers or Vapor Diffusion Retarders Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. In most U.S. climates, vapor barriers, or -- more

  10. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  11. Vapor spill monitoring method

    DOE Patents [OSTI]

    Bianchini, Gregory M.; McRae, Thomas G.

    1985-01-01

    Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

  12. The use of DRIFTS-MS and kinetic studies to determine the role of acetic acid in the palladium-catalyzed vapor-phase synthesis of vinyl acetate

    SciTech Connect (OSTI)

    Augustine, S.M.; Blitz, J.P. (Quantum Chemical Corp., Cincinnati, OH (United States))

    1993-07-01

    Supported palladium catalyzes the synthesis of vinyl acetate (VA) by oxyacetylation of ethylene. Alkali promoters increase activity and selectivity. The role of acetic acid (HOAc) in these processes is not well understood. Activation energy studies show that HOAc alters the catalyst site and lowers the reaction barrier to VA formation. After correction for this effect, the kinetics reveal that as a reagent HOAc is zero order. This is probably due to a strong adsorption of HOAc and Pd which forms the catalyst active phase. Detailed spectroscopic studies support this conclusion. The surface processes on a supported vinyl acetate catalyst were studied using a method which couples diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) with mass spectrometry (MS). The DRIFTS-MS technique combines the capability of selectively analyzing IR-active surface species with sensitive detection of transient reaction products. By comparing the catalyst with mixtures of palladium acetate powder physically dispersed in potassium chloride, it is determined that the active phase on the catalyst is a form of palladium acetate. Compound formation is consistent with the strong chemisorption of HOAc on Pd. Kinetic analysis of temperature-programmed reaction(TPRxn) data suggests that Pd metal or metal oxide adjacent to the active site is important in the reaction mechanism. 25 refs., 10 figs., 2 tabs.

  13. Electroless epitaxial etching for semiconductor applications

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  14. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOE Patents [OSTI]

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  15. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  16. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1986-08-15

    The atomic vapor laser isotope separation (AVLIS) process for the enrichment of uranium is evaluated. (AIP)

  17. Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels; Phase 3: Effects of Winter Gasoline Volatility and Ethanol Content on Blend Flammability; Flammability Limits of Denatured Ethanol

    SciTech Connect (OSTI)

    Gardiner, D. P.; Bardon, M. F.; Clark, W.

    2011-07-01

    This study assessed differences in headspace flammability for summertime gasolines and new high-ethanol content fuel blends. The results apply to vehicle fuel tanks and underground storage tanks. Ambient temperature and fuel formulation effects on headspace vapor flammability of ethanol/gasoline blends were evaluated. Depending on the degree of tank filling, fuel type, and ambient temperature, fuel vapors in a tank can be flammable or non-flammable. Pure gasoline vapors in tanks generally are too rich to be flammable unless ambient temperatures are extremely low. High percentages of ethanol blended with gasoline can be less volatile than pure gasoline and can produce flammable headspace vapors at common ambient temperatures. The study supports refinements of fuel ethanol volatility specifications and shows potential consequences of using noncompliant fuels. E85 is flammable at low temperatures; denatured ethanol is flammable at warmer temperatures. If both are stored at the same location, one or both of the tanks' headspace vapors will be flammable over a wide range of ambient temperatures. This is relevant to allowing consumers to splash -blend ethanol and gasoline at fueling stations. Fuels compliant with ASTM volatility specifications are relatively safe, but the E85 samples tested indicate that some ethanol fuels may produce flammable vapors.

  18. Role of carbon surface diffusion and strain on the epitaxial...

    Office of Scientific and Technical Information (OSTI)

    epitaxial growth of graphene on SiC(0001). Citation Details In-Document Search Title: Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). ...

  19. Vapor concentration monitor

    DOE Patents [OSTI]

    Bayly, John G.; Booth, Ronald J.

    1977-01-01

    An apparatus for monitoring the concentration of a vapor, such as heavy water, having at least one narrow bandwidth in its absorption spectrum, in a sample gas such as air. The air is drawn into a chamber in which the vapor content is measured by means of its radiation absorption spectrum. High sensitivity is obtained by modulating the wavelength at a relatively high frequency without changing its optical path, while high stability against zero drift is obtained by the low frequency interchange of the sample gas to be monitored and of a reference sample. The variable HDO background due to natural humidity is automatically corrected.

  20. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

    1983-02-08

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

  1. Vapor Extraction Well Performance and Recommendations for Future Soil Vapor

    Office of Scientific and Technical Information (OSTI)

    Extraction Activities at the A-014 Outfall (Technical Report) | SciTech Connect Technical Report: Vapor Extraction Well Performance and Recommendations for Future Soil Vapor Extraction Activities at the A-014 Outfall Citation Details In-Document Search Title: Vapor Extraction Well Performance and Recommendations for Future Soil Vapor Extraction Activities at the A-014 Outfall No abstract provided. Authors: Jackson, D. [1] ; Hyde, W. [1] ; Walker, R. [1] ; Riha, B. [1] ; Ross, J. [1] ;

  2. Category:Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    Mercury Vapor Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Geothermalpower.jpg Looking for the Mercury Vapor page? For detailed information on Mercury Vapor as...

  3. Vapor Retarder Classification - Building America Top Innovation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vapor Retarder Classification - Building America Top Innovation Vapor Retarder Classification - Building America Top Innovation Photo of a vapor retarder classification. Air-tight ...

  4. LaCrO3 heteroepitaxy on SrTiO3(001) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Qiao, Liang; Droubay, Timothy C.; Bowden, Mark E.; Shutthanandan, V.; Kaspar, Tiffany C.; Chambers, Scott A.

    2011-08-09

    Stoichiometric, epitaxial LaCrO3 films have been grown on TiO2-terminated SrTiO3(001) substrates by molecular beam epitaxy using O2 as the oxidant. Film growth occurred in a layer-by-layer fashion, giving rise to structurally excellent films and surfaces which preserve the step-terrace structure of the substrate. The critical thickness is in excess of 500 . Near-surface Cr(III) is highly susceptible to further oxidation to Cr(V), leading to the formation of a disordered phase upon exposure to atomic oxygen. Recovery of the original epitaxial LaCrO3 phase is readily achieved by vacuum annealing.

  5. Metallic 1T phase source/drain electrodes for field effect transistors...

    Office of Scientific and Technical Information (OSTI)

    from chemical vapor deposited MoSsub 2 Citation Details In-Document Search Title: Metallic 1T phase sourcedrain electrodes for field effect transistors from chemical vapor ...

  6. Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    SciTech Connect (OSTI)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada); Prasad, B. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Egilmez, M. [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)] [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

    2013-12-02

    In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ? attains a large time dependent value. The ? decreases sharply with an increasing angle ? between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}?/sin{sup 2}? dependence for all films. The regular oscillations are recovered during repetitive sweeping of ? between 0 and 180. We discuss possible factors that could produce these unusual changes in the resistivity.

  7. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R

    2012-10-23

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  8. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R.

    2016-05-03

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  9. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan; Hassani, Vahab

    2008-05-20

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  10. Filter vapor trap

    DOE Patents [OSTI]

    Guon, Jerold

    1976-04-13

    A sintered filter trap is adapted for insertion in a gas stream of sodium vapor to condense and deposit sodium thereon. The filter is heated and operated above the melting temperature of sodium, resulting in a more efficient means to remove sodium particulates from the effluent inert gas emanating from the surface of a liquid sodium pool. Preferably the filter leaves are precoated with a natrophobic coating such as tetracosane.

  11. In-well vapor stripping drilling and characterization work plan

    SciTech Connect (OSTI)

    Koegler, K.J.

    1994-03-13

    This work plan provides the information necessary for drilling, sampling, and hydrologic testing of wells to be completed in support of a demonstration of the in-well vapor stripping system. The in-well vapor stripping system is a remediation technology designed to preferentially extract volatile organic compounds (VOCs) from contaminated groundwater by converting them to a vapor phase. Air-lift pumping is used to lift and aerate groundwater within the well. The volatiles escaping the aerated water are drawn off by a slight vacuum and treated at the surface while the water is allowed to infiltrate the vadose zone back to the watertable.

  12. The vapor pressures of explosives

    SciTech Connect (OSTI)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 C.

  13. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    SciTech Connect (OSTI)

    Eric M. Suuberg; Vahur Oja

    1997-07-01

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  14. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    called "structural" vapor diffusion retarders. Materials such as rigid foam insulation, reinforced plastics, aluminum, and stainless steel are relatively resistant to...

  15. Wafer bonded epitaxial templates for silicon heterostructures

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  16. Domain epitaxy for thin film growth

    DOE Patents [OSTI]

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  17. Production of higher quality bio-oils by in-line esterification of pyrolysis vapor

    DOE Patents [OSTI]

    Hilten, Roger Norris; Das, Keshav; Kastner, James R; Bibens, Brian P

    2014-12-02

    The disclosure encompasses in-line reactive condensation processes via vapor phase esterification of bio-oil to decease reactive species concentration and water content in the oily phase of a two-phase oil, thereby increasing storage stability and heating value. Esterification of the bio-oil vapor occurs via the vapor phase contact and subsequent reaction of organic acids with ethanol during condensation results in the production of water and esters. The pyrolysis oil product can have an increased ester content and an increased stability when compared to a condensed pyrolysis oil product not treated with an atomized alcohol.

  18. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  19. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  20. Vapor spill pipe monitor

    DOE Patents [OSTI]

    Bianchini, G.M.; McRae, T.G.

    1983-06-23

    The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

  1. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  2. Electrostatic transfer of epitaxial graphene to glass. (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Electrostatic transfer of epitaxial graphene to glass. Citation Details In-Document Search Title: Electrostatic transfer of epitaxial graphene to glass. We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer

  3. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  4. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  5. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  6. Selective epitaxy using the gild process

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  7. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

  8. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome...

  9. Modification of structure and magnetic anisotropy of epitaxial...

    Office of Scientific and Technical Information (OSTI)

    films by hydrogen reduction Citation Details In-Document Search Title: Modification of structure and magnetic anisotropy of epitaxial CoFeO films by hydrogen reduction ...

  10. Liquid-phase exfoliation of chemical vapor deposition-grown single layer graphene and its application in solution-processed transparent electrodes for flexible organic light-emitting devices

    SciTech Connect (OSTI)

    Wu, Chaoxing; Li, Fushan E-mail: gtl-fzu@hotmail.com; Wu, Wei; Chen, Wei; Guo, Tailiang E-mail: gtl-fzu@hotmail.com

    2014-12-15

    Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (?8 ?/?), high transmittance (?81% at 550?nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.

  11. THERMALLY OPERATED VAPOR VALVE

    DOE Patents [OSTI]

    Dorward, J.G. Jr.

    1959-02-10

    A valve is presented for use in a calutron to supply and control the vapor to be ionized. The invention provides a means readily operable from the exterior of the vacuum tank of the apparatuss without mechanical transmission of forces for the quick and accurate control of the ionizing arc by a corresponding control of gas flow theretos thereby producing an effective way of carefully regulating the operation of the calutron. The invention consists essentially of a tube member extending into the charge bottle of a calutron devices having a poppet type valve closing the lower end of the tube. An electrical heating means is provided in the valve stem to thermally vary the length of the stem to regulate the valve opening to control the flow of material from the charge bottle.

  12. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  13. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect (OSTI)

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 ?m/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  14. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  15. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS...

    Office of Scientific and Technical Information (OSTI)

    is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. ...

  16. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo{sub 5}(0001) epitaxial thin films

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    SmCo{sub 5}(0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al{sub 2}O{sub 3}(0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo{sub 5}(0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo{sub 5} film and substitute the Co sites in SmCo{sub 5} structure forming an alloy compound of Sm(Co,Cu){sub 5}. The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo{sub 5} film is assisting the formation of Sm(Co,Cu){sub 5} ordered phase.

  17. Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

    SciTech Connect (OSTI)

    Wang, Tianqi; Prakash, Abhinav; Jalan, Bharat; Warner, Ellis; Gladfelter, Wayne L.

    2015-03-15

    The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

  18. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4”or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN system was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

  19. Metal/semiconductor phase transition in chromium nitride(001) grown by

    Office of Scientific and Technical Information (OSTI)

    rf-plasma-assisted molecular-beam epitaxy (Journal Article) | SciTech Connect Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy Citation Details In-Document Search Title: Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N

  20. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

    1983-04-19

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  1. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-12-15

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  2. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    SciTech Connect (OSTI)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  3. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered

    Office of Scientific and Technical Information (OSTI)

    Magnesium Oxide Substrates (Conference) | SciTech Connect Conference: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Epitaxial films of strontium bismuth tantalate (SrBi{sub 2}Ta{sub 2}O{sub 9}, SBT) and strontium bismuth niobate (SrBi{sub 2}Nb{sub 2}O{sub 9}, SBN) were grown using solution deposition

  4. Water Vapor Experiment Concludes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Technical Report) | SciTech Connect Water Usage for In-Situ Oil Shale Retorting - A Systems Dynamics Model Citation Details In-Document Search Title: Water Usage for In-Situ Oil Shale Retorting - A Systems Dynamics Model A system dynamic model was construction to evaluate the water balance for in-situ oil shale conversion. The model is based on a systems dynamics approach and uses the Powersim Studio 9(tm) software package. Three phases of an insitu retort were consider; a construction

  5. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  6. Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/Sr{sub 2}RuO{sub 4} heterostructures

    SciTech Connect (OSTI)

    Schlom, D.G.; Merritt, B.A.; Madhavan, S. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering] [and others

    1997-09-01

    The anisotropic oxide superconductors YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} and Sr{sub 2}RuO{sub 4} have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr{sub 2}RuO{sub 4} films were grown by pulsed laser deposition. YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films were then grown on both orientations of Sr{sub 2}RuO{sub 4} films and the resulting epitaxy was characterized.

  7. Electrostatic Transfer of Epitaxial Graphene. (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Electrostatic Transfer of Epitaxial Graphene. Citation Details In-Document Search Title: Electrostatic Transfer of Epitaxial Graphene. Abstract not provided. Authors: Biedermann, Laura Butler Publication Date: 2011-05-01 OSTI Identifier: 1109245 Report Number(s): SAND2011-3570C 471561 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: MSE 520 Graduate Seminar Series (UW) held May 23, 2011 in Seattle, WA.; Related Information: Proposed for

  8. Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene.

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene. Citation Details In-Document Search Title: Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene. Abstract not provided. Authors: Ohta, Taisuke ; Biedermann, Laura Butler ; Beechem Iii, Thomas Edwin ; Howell, Stephen Wayne ; Schmidt, Diedrich A. Publication Date: 2010-06-01 OSTI Identifier: 1123545 Report Number(s): SAND2010-3581J 492436 DOE Contract Number:

  9. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest

  10. Characterization and comparison of devices fabricated from epitaxial

    Office of Scientific and Technical Information (OSTI)

    graphene on SiC and electrostatically transferred graphene. (Conference) | SciTech Connect Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene. Citation Details In-Document Search Title: Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene. Abstract not provided. Authors: Howell, Stephen W. ; Biedermann, Laura Butler ; Beechem III, Thomas

  11. Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on

    Office of Scientific and Technical Information (OSTI)

    Monocrystalline and Polycrystalline Seed Layers on Glass (Journal Article) | SciTech Connect Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Citation Details In-Document Search Title: Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Authors: Teplin, Charles W. ; Grover, Sachit ; Chitu, Adrian ; Limanov, Alexander ; Chahal, Monical ; Im,

  12. Crystal nucleation and near-epitaxial growth in nacre

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystal nucleation and near-epitaxial growth in nacre Crystal nucleation and near-epitaxial growth in nacre Print Thursday, 12 December 2013 13:56 Nacre--the iridescent inner lining of many mollusk shells-- has a unique strcuture that is remarkably resistant to fracture. The nacre featured on this cover is from Haliotis laevigata with average layer thickness 470-nm. The colors represent crystal orientationthe crystal lattice tilts across tablets.left stack all tablets are yellow, hence all

  13. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3??}) depending on the oxygen content. The currentvoltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  14. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  15. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  16. LABORATORY TESTING TO SIMULATE VAPOR SPACE CORROSION IN RADIOACTIVE WASTE STORAGE TANKS

    SciTech Connect (OSTI)

    Wiersma, B.; Garcia-Diaz, B.; Gray, J.

    2013-08-30

    Radioactive liquid waste has been stored in underground carbon steel tanks for nearly 70 years at the Hanford nuclear facility. Vapor space corrosion of the tank walls has emerged as an ongoing challenge to overcome in maintaining the structural integrity of these tanks. The interaction between corrosive and inhibitor species in condensates/supernates on the tank wall above the liquid level, and their interaction with vapor phase constituents as the liquid evaporates from the tank wall influences the formation of corrosion products and the corrosion of the carbon steel. An effort is underway to gain an understanding of the mechanism of vapor space corrosion. Localized corrosion, in the form of pitting, is of particular interest in the vapor space. CPP testing was utilized to determine the susceptibility of the steel in a simulated vapor space environment. The tests also investigated the impact of ammonia gas in the vapor space area on the corrosion of the steel. Vapor space coupon tests were also performed to investigate the evolution of the corrosion products during longer term exposures. These tests were also conducted at vapor space ammonia levels of 50 and 550 ppm NH{sub 3} (0.005, and 0.055 vol.%) in air. Ammonia was shown to mitigate vapor space corrosion.

  17. Vapor generation methods for explosives detection research

    SciTech Connect (OSTI)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2012-12-01

    The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

  18. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D.

    1985-01-01

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  19. Chemistry, phase formation, and catalytic activity of thinpalladium...

    Office of Scientific and Technical Information (OSTI)

    Title: Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition The chemistry, ...

  20. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

  1. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, R.W.; Paisner, J.A.; Story, T.

    1990-08-21

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique. 23 figs.

  2. ARM - Field Campaign - Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP ... Responses to Site Operations Questionnaires for Water Vapor IOP Instrument Name Instrument ...

  3. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO 2 Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

    2008-01-01

    Ulmore » trathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin ( ∼ 10–12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ∼ 1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.« less

  4. Vapor Retarder Classification - Building America Top Innovation |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Vapor Retarder Classification - Building America Top Innovation Vapor Retarder Classification - Building America Top Innovation Photo of a vapor retarder classification. Air-tight and well-insulated homes have little or no tolerance for drying if they get wet; moisture control is critical. This Top Innovation profile describes Building America research that established vapor retarder classifications and appropriate applications that has been instrumental in the market

  5. Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

    SciTech Connect (OSTI)

    Han, Cheng; Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 ; Lin, Jiadan; Xiang, Du; Wang, Chaocheng; Wang, Li; Chen, Wei; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542

    2013-12-23

    By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

  6. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

    2016-04-01

    Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

  7. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical solution method It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach,

  8. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  9. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, Larry W.

    1984-01-01

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  10. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, L.W.

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid - starting as feedwater heating where no vapors are present, progressing to nucleate heating where vaporization begins and some vapors are present, and concluding with film heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10 to 30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  11. Structural and magnetic properties of stoichiometric epitaxial...

    Office of Scientific and Technical Information (OSTI)

    A simultaneous increase of the CoO crystalline quality and chemical phase purity has been ... OSTI Identifier: 20957834 Resource Type: Journal Article Resource Relation: Journal Name: ...

  12. Electroelastic fields in artificially created vortex cores in epitaxial

    Office of Scientific and Technical Information (OSTI)

    BiFeO3 thin films (Journal Article) | SciTech Connect Electroelastic fields in artificially created vortex cores in epitaxial BiFeO3 thin films Citation Details In-Document Search This content will become publicly available on August 4, 2016 Title: Electroelastic fields in artificially created vortex cores in epitaxial BiFeO3 thin films Authors: Winchester, B. [1] ; Balke, N. [2] ; Cheng, X. X. [1] ; Morozovska, A. N. [3] ; Kalinin, S. [2] Search SciTech Connect for author "Kalinin,

  13. Process for growing epitaxial gallium nitride and composite wafers

    DOE Patents [OSTI]

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  14. Epitaxial growth of NiTiO3 with a distorted ilmenite structure

    SciTech Connect (OSTI)

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Bolin, Trudy B.; Shelton, William A.; Chambers, Scott A.

    2012-06-30

    MTiO3 (M = Fe, Mn, Ni) compounds have received recent attention as possible candidates for new multiferroic materials capable of magnetization switching by application of an electric field. Epitaxial Ni1-xTi1-yO3 films of different thickness and composition were deposited on Al2O3(0001) by pulsed laser deposition, and characterized using several techniques. Structural parameters for the metastable LiNbO3-type NiTiO3 structure with the space group R3c were predicted using density functional theory calculations, and compared with the experimental results. Our structural data from x-ray diffraction and x-ray absorption spectroscopy indicate that epitaxial ilmenite-type NiTiO3 films were successfully grown. Furthermore, lattice strain exerted by the sapphire substrate results in a distorted ilmenite structure similar to the LiNbO3-type one. Our results demonstrate the potential of oxide heteroepitaxy to stabilize metastable multiferroic phases that may be difficult to prepare or are inaccessible in the bulk.

  15. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometrymore » study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

  16. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect (OSTI)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200650 C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  17. Process for recovering organic vapors from air

    DOE Patents [OSTI]

    Baker, Richard W.

    1985-01-01

    A process for recovering and concentrating organic vapor from a feed stream of air having an organic vapor content of no more than 20,000 ppm by volume. A thin semipermeable membrane is provided which has a feed side and a permeate side, a selectivity for organic vapor over air of at least 50, as measured by the ratio of organic vapor permeability to nitrogen permeability, and a permeability of organic vapor of at least 3.times.10.sup.-7 cm.sup.3 (STP) cm/cm.sup.2 sec.cm Hg. The feed stream is passed across the feed side of the thin semipermeable membrane while providing a pressure on the permeate side which is lower than the feed side by creating a partial vacuum on the permeate side so that organic vapor passes preferentially through the membrane to form an organic vapor depleted air stream on the feed side and an organic vapor enriched stream on the permeate side. The organic vapor which has passed through the membrane is compressed and condensed to recover the vapor as a liquid.

  18. Effect of higher water vapor content on TBC performance

    SciTech Connect (OSTI)

    Pint, Bruce A; Haynes, James A

    2012-01-01

    Coal gasification, or IGCC (integrated gasification combined cycle), is one pathway toward cleaner use of coal for power generation with lower emissions. However, when coal-derived synthesis gas (i.e., syngas) is burned in turbines designed for natural gas, turbine manufacturers recommend 'derating,' or lowering the maximum temperature, which lowers the efficiency of the turbine, making electricity from IGCC more expensive. One possible reason for the derating is the higher water vapor contents in the exhaust gas. Water vapor has a detrimental effect on many oxidation-resistant high-temperature materials. In a turbine hot section, Ni-base superalloys are coated with a thermal barrier coating (TBC) allowing the gas temperature to be higher than the superalloy solidus temperature. TBCs have a low thermal conductivity ceramic top coating (typically Y{sub 2}O{sub 3}-stabilized ZrO{sub 2}, or YSZ) and an oxidation-resistant metallic bond coating. For land-based gas turbines, the industry standard is air plasma sprayed (APS) YSZ and high velocity oxygen fuel (HVOF) sprayed NiCoCrAlY bond coatings. To investigate the role of higher water vapor content on TBC performance and possible mitigation strategies, furnace cycling experiments were conducted in dry O{sub 2} and air with 10% (typical with natural gas or jet fuel) or 50 vol% water vapor. Cycle frequency and temperature were accelerated to one hour at 1100 C (with 10 minute cooling to {approx}30 C between each thermal cycle) to induce early failures in coatings that are expected to operate for several years with a metal temperature of {approx}900 C. Coupons (16 mm diameter x 2 mm thick) of commercial second-generation single crystal superalloy CMSX4 were HVOF coated on both sides with {approx}125 {micro}m of Ni-22wt%Co-17Cr-12Al either with 0.7Y or 0.7Y-0.3Hf-0.4Si. One side was then coated with 190-240 {micro}m of APS YSZ. Coatings were cycled until the YSZ top coating spalled. Figure 2 shows the results of the initial phase of experiments. Compared to dry O{sub 2}, the addition of 10% water vapor decreased the lifetime of MCrAlY by {approx}30% for the conventional CMSX4 substrates. Higher average lifetimes were observed with Hf in the bond coating, but a similar decrease in lifetime was observed when water vapor was added. The addition of Y and La to the superalloy substrate did not change the YSZ lifetime with 10% water vapor. However, increasing water vapor content from 10 to 50% did not further decrease the lifetime of either bond coating with the doped superalloy substrate. Thus, these results suggest that higher water vapor contents cannot explain the derating of syngas-fired turbines, and other factors such as sulfur and ash from imperfect syngas cleanup (or upset conditions) need to be explored. Researchers continue to study effects of water vapor on thermally grown alumina scale adhesion and growth rate, and are looking for bond coating compositions more resistant to oxidation in the presence of water vapor.

  19. Wick for metal vapor laser

    DOE Patents [OSTI]

    Duncan, David B. (Livermore, CA)

    1992-01-01

    An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

  20. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  1. Control of flow through a vapor generator

    DOE Patents [OSTI]

    Radcliff, Thomas D.

    2005-11-08

    In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

  2. Cantilever Epitaxy Process Wins R&D 100 Award

    Broader source: Energy.gov [DOE]

    Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

  3. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect (OSTI)

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  4. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, Don G.; Miller, John L.

    1993-01-01

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  5. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, D.G.; Miller, J.L.

    1993-02-23

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  6. Non-Vapor Compression HVAC Technologies Report

    Broader source: Energy.gov [DOE]

    While vapor-compression technologies have served heating, ventilation, and air-conditioning (HVAC) needs very effectively, and have been the dominant HVAC technology for close to 100 years, the conventional refrigerants used in vapor-compression equipment contribute to global climate change when released to the atmosphere. The Building Technologies Office is evaluating low-global warming potential (GWP) alternatives to vapor-compression technologies.

  7. Novel methods of copper vapor laser excitation

    SciTech Connect (OSTI)

    McColl, W.B.; Ching, H.; Bosch, R.; Brake, M.; Gilgenbach, R.

    1990-12-31

    Microwave and intense electron beam excitation of copper vapor are being investigated to be used in copper vapor lasers for isotope separation. Both methods use copper chloride vapor by heating copper chloride. Helium was used as the buffer gas at 2 to 100 torr. In the microwave system, intense copperlines at 510 nm and 578 nm were observed. Initial electron beam results indicate that light emission follows the beam current.

  8. Growth of epitaxial (Sr,Ba){sub n+1}Ru{sub n}O{sub 3n+1} films

    SciTech Connect (OSTI)

    Schlom, D.G.; Knapp, S.B.; Wozniak, S. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering] [and others

    1997-12-01

    We have grown epitaxial (Sr,Ba) (n+1)Ru(n)O(3n+1) films, n = 1, 2, and infinity, by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase pure films have been mapped out. Resistivity versus temperature measurements show that both a and c axis films of Sr2RuO4 are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.

  9. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  10. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect (OSTI)

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-01-01

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  11. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; et al

    2014-01-01

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  12. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  13. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  14. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  15. Propane-induced biodegradation of vapor phase trichloroethylene...

    Office of Scientific and Technical Information (OSTI)

    46; Journal Issue: 4; Other Information: PBD: 20 May 1995 Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 56 BIOLOGY AND MEDICINE, ...

  16. The influence of ice nucleation mode and ice vapor growth on simulation of

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    arctic mixed-phase clouds The influence of ice nucleation mode and ice vapor growth on simulation of arctic mixed-phase clouds Avramov, Alexander The Pennsylvania State University Category: Modeling Mixed-phase arctic stratus clouds are the predominant cloud type in the Arctic . Perhaps one of the most intriguing of their features is that they tend to have liquid tops that precipitate ice. Despite the fact that this situation is colloidally unstable, these cloud systems are quite long lived

  17. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product

    SciTech Connect (OSTI)

    Koontz, A; Cadeddu, M

    2012-12-05

    The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 ± 1, 3, 7, and 14 GHz.

  18. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, Vincent J.; Johnson, Stanley A.

    1999-01-01

    A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

  19. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, V.J.; Johnson, S.A.

    1999-08-03

    A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

  20. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1985-11-08

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

  1. Stacked vapor fed amtec modules

    DOE Patents [OSTI]

    Sievers, Robert K.

    1989-01-01

    The present invention pertains to a stacked AMTEC module. The invention includes a tubular member which has an interior. The member is comprised of a ion conductor that substantially conducts ions relative to electrons, preferably a beta"-alumina solid electrolyte, positioned about the interior. A porous electrode for conducting electrons and allowing sodium ions to pass therethrough, and wherein electrons and sodium ions recombine to form sodium is positioned about the beta"-alumina solid electrolyte. The electrode is operated at a temperature and a pressure that allows the recombined sodium to vaporize. Additionally, an outer current collector grid for distributing electrons throughout the porous electrode is positioned about and contacts the porous electrode. Also included in the invention is transporting means for transporting liquid sodium to the beta"-alumina solid electrolyte of the tubular member. A transition piece is positioned about the interior of the member and contacts the transporting means. The transition piece divides the member into a first cell and a second cell such that each first and second cell has a beta"-alumina solid electrolyte, a first and second porous electrode and a grid. The transition piece conducts electrons from the interior of the tubular member. There is supply means for supplying sodium to the transporting means. Preferably the supply means is a shell which surrounds the tubular member and is operated at a temperature such that the vaporized sodium condenses thereon. Returning means for returning the condensed sodium from the shell to the transporting means provides a continuous supply of liquid sodium to the transporting means. Also, there are first conducting means for conducting electric current from the transition piece which extends through the shell, and second conducting means for conducting electric current to the grid of the first cell which extends through the shell.

  2. High bandwidth vapor density diagnostic system

    DOE Patents [OSTI]

    Globig, Michael A.; Story, Thomas W.

    1992-01-01

    A high bandwidth vapor density diagnostic system for measuring the density of an atomic vapor during one or more photoionization events. The system translates the measurements from a low frequency region to a high frequency, relatively noise-free region in the spectrum to provide improved signal to noise ratio.

  3. Tower Water-Vapor Mixing Ratio

    SciTech Connect (OSTI)

    Guastad, Krista; Riihimaki, Laura; none,

    2013-04-01

    The purpose of the Tower Water-Vapor Mixing Ratio (TWRMR) value-added product (VAP) is to calculate water-vapor mixing ratio at the 25-meter and 60-meter levels of the meteorological tower at the Southern Great Plains (SGP) Central Facility.

  4. Quantitative organic vapor-particle sampler

    DOE Patents [OSTI]

    Gundel, Lara; Daisey, Joan M.; Stevens, Robert K.

    1998-01-01

    A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

  5. LNG fire and vapor control system technologies

    SciTech Connect (OSTI)

    Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

    1982-06-01

    This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

  6. DOE-EPSCoR. Exchange interactions in epitaxial intermetallic layered systems

    SciTech Connect (OSTI)

    LeClair, Patrick R.; Gary, Mankey J.

    2015-05-25

    The goal of this research is to develop a fundamental understanding of the exchange interactions in epitaxial intermetallic alloy thin films and multilayers, including films and multilayers of Fe-Pt, Co-Pt and Fe-P-Rh alloys deposited on MgO and Al2O3 substrates. Our prior results have revealed that these materials have a rich variety of ferromagnetic, paramagnetic and antiferromagnetic phases which are sensitive functions of composition, substrate symmetry and layer thickness. Epitaxial antiferromagnetic films of FePt alloys exhibit a different phase diagram than bulk alloys. The antiferromagnetism of these materials has both spin ordering transitions and spin orienting transitions. The objectives include the study of exchange-inversion materials and the interface of these materials with ferromagnets. Our aim is to formulate a complete understanding of the magnetic ordering in these materials, as well as developing an understanding of how the spin structure is modified through contact with a ferromagnetic material at the interface. The ultimate goal is to develop the ability to tune the phase diagram of the materials to produce layered structures with tunable magnetic properties. The alloy systems that we will study have a degree of complexity and richness of magnetic phases that requires the use of the advanced tools offered by the DOE-operated national laboratory facilities, such as neutron and x-ray scattering to measure spin ordering, spin orientations, and element-specific magnetic moments. We plan to contribute to DOE’s mission of producing “Materials by Design” with properties determined by alloy composition and crystal structure. We have developed the methods for fabricating and have performed neutron diffraction experiments on some of the most interesting phases, and our work will serve to answer questions raised about the element-specific magnetizations using the magnetic x-ray dichroism techniques and interface magnetism in layered structures using polarized neutron reflectometry. Through application of these techniques to understand the materials fabricated in our laboratory, we will employ a tight feedback loop to tailor the magnetic properties on demand. Developing the ability to control magnetic anisotropy is essential for creating the next generation of magnetic storage media (for hard disks, for example), where individual bit sizes have already become smaller than 100nm in the largest dimension. Still smaller bits and higher storage density will require the ability to exquisitely tailor magnetic media properties at the atomic level, the ultimate goal of our study.

  7. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect (OSTI)

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  8. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect (OSTI)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (?6?meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  9. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  10. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  11. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  12. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  13. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    DOE Patents [OSTI]

    Goyal, Amit (Knoxville, TN)

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  14. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    DOE Patents [OSTI]

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  15. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  16. After More Than 20 Years Operating, Hanford's Soil Vapor Extraction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wise, Juan Aguilar, Doug Rybarski, and Christina Agular. The soil vapor extraction trailer is shown near Hanfords Plutonium Finishing Plant. The soil vapor extraction...

  17. PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Stable Perovskite Solar Cells via Chemical Vapor Deposition PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor Deposition Funding Opportunity: SuNLaMP SunShot ...

  18. Rotary Vapor Compression Cycle Technology: A Pathway to Ultra...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Rotary Vapor Compression Cycle Technology: A Pathway to Ultra-Efficient Air Conditioning, Heating and Refrigeration Rotary Vapor Compression Cycle Technology: A Pathway to...

  19. Epitaxial growth of three-dimensionally architectured optoelectronic devices

    SciTech Connect (OSTI)

    Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P.; Dunham, Simon N.; Verma, Varun; Miyake, Masao; Wiltzius, Pierre; Rogers, John A.; Coleman, James J.; Li, Xiuling; Braun, Paul V.

    2011-07-24

    Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group IIIV materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

  20. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect (OSTI)

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (540 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  1. Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

    SciTech Connect (OSTI)

    Li, C.; Zeng, Z. Q.; Hirono, Y.; Morgan, T. A.; Hu, X.; Salamo, G. J.; Fan, D. S.; Wu, J.; Yu, S. Q.; Wang, Zh. M.

    2011-12-12

    Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with classical nucleation theory. These results may extend the flexibility of droplet epitaxy by serving as templates for group V based droplet epitaxy, which is in contrast to conventional group III based droplet epitaxy and may encourage nanostructure formation of bismuth-containing materials.

  2. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial...

    Office of Scientific and Technical Information (OSTI)

    Rotationally Commensurate Growth of MoSsubscript 2 on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoSsubscript 2 on ...

  3. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  4. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect (OSTI)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  5. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect (OSTI)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  6. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  7. Process for vaporizing a liquid hydrocarbon fuel

    DOE Patents [OSTI]

    Szydlowski, Donald F. (East Hartford, CT); Kuzminskas, Vaidotas (Glastonbury, CT); Bittner, Joseph E. (East Hartford, CT)

    1981-01-01

    The object of the invention is to provide a process for vaporizing liquid hydrocarbon fuels efficiently and without the formation of carbon residue on the apparatus used. The process includes simultaneously passing the liquid fuel and an inert hot gas downwardly through a plurality of vertically spaed apart regions of high surface area packing material. The liquid thinly coats the packing surface, and the sensible heat of the hot gas vaporizes this coating of liquid. Unvaporized liquid passing through one region of packing is uniformly redistributed over the top surface of the next region until all fuel has been vaporized using only the sensible heat of the hot gas stream.

  8. Recovering hydrocarbons from hydrocarbon-containing vapors

    DOE Patents [OSTI]

    Mirza, Zia I.; Knell, Everett W.; Winter, Bruce L.

    1980-09-30

    Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

  9. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices

    SciTech Connect (OSTI)

    Saha, Bivas; Lawrence, Samantha K.; Bahr, David F.; Schroeder, Jeremy L.; Birch, Jens; Sands, Timothy D.

    2014-10-13

    High hardness TiAlN alloys for wear-resistant coatings exhibit limited lifetimes at elevated temperatures due to a cubic-AlN to hexagonal-AlN phase transformation that leads to decreasing hardness. We enhance the hardness (up to 46 GPa) and maximum operating temperature (up to 1050 °C) of TiAlN-based coatings by alloying with scandium nitride to form both an epitaxial TiAlScN alloy film and epitaxial rocksalt TiN/(Al,Sc)N superlattices on MgO substrates. The superlattice hardness increases with decreasing period thickness, which is understood by the Orowan bowing mechanism of the confined layer slip model. These results make them worthy of additional research for industrial coating applications.

  10. Structural perturbations of epitaxial ?-(Fe1-xVx)2O3 thin films driven by excess oxygen near the surface

    SciTech Connect (OSTI)

    Chamberlin, Sara E.; Kaspar, Tiffany C.; Bowden, Mark E.; Shutthanandan, V.; Kabius, Bernd C.; Heald, Steve M.; Keavney, David; Chambers, Scott A.

    2014-12-21

    We examine the structure and composition of phase-pure epitaxial ?-(Fe1-xVx)2O3 thin films deposited on ?-Al2O3(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0 ? x ? ~0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth may have an impact on local bonding geometries, and could be highly significant in this materials efficiency as a photocatalyst.

  11. Vapor-liquid equilibria and densities for the system butane + hexacontane

    SciTech Connect (OSTI)

    Nieuwoudt, I.

    1996-09-01

    Liquid and vapor phase compositions and densities have been measured with a variable volume cell for the binary system butane + hexacontane (n-C{sub 60}H{sub 122}). Data sets at 433.15 K, 438.15 K, and 453.15 K are presented and include measurements in the mixture critical region.

  12. Air pollution EPA'S efforts to control gasoline vapors from motor vehicles

    SciTech Connect (OSTI)

    Not Available

    1989-01-01

    This report examines ozone, often called smog, which is a respiratory irritant, and long-term exposure may cause permanent lung damage. Attempts by EPA to reduce gasoline vapors, a major contributor to ozone, by requiring refiners to lower the volatility (evaporation rate) of gasoline sold during the summer months when most high ozone levels occur and auto manufacturers to install vapor recovery equipment (onboard controls) on motor vehicles. Beginning in 1989 (Phase I), the maximum volatility of gasoline sold during the summer would fall to 10.5 pounds per square inch and beginning in 1992 (Phase II), the maximum volatility would fall to 9.0 pounds per square inch. EPA has not yet acted on Phase II reductions because it disagrees with the Department of Transportation on the dangers of adding onboard controls to vehicles. DOT believes the onboard controls may pose an increased risk of fire during crashes. In this report's view, the Stage II controls are a practical and feasible way to control refueling vapors and that onboard controls may well surpass the effectiveness of Phase II controls and therefore should not be abandoned as a way to reduce gasoline vapors.

  13. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect (OSTI)

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  14. Probe for measurement of velocity and density of vapor in vapor plume

    DOE Patents [OSTI]

    Berzins, Leon V.; Bratton, Bradford A.; Fuhrman, Paul W.

    1997-01-01

    A probe which directs a light beam through a vapor plume in a first direction at a first angle ranging from greater than 0.degree. to less than 90.degree., reflecting the light beam back through the vapor plume at a 90.degree. angle, and then reflecting the light beam through the vapor plume a third time at a second angle equal to the first angle, using a series of mirrors to deflect the light beam while protecting the mirrors from the vapor plume with shields. The velocity, density, temperature and flow direction of the vapor plume may be determined by a comparison of the energy from a reference portion of the beam with the energy of the beam after it has passed through the vapor plume.

  15. Probe for measurement of velocity and density of vapor in vapor plume

    DOE Patents [OSTI]

    Berzins, L.V.; Bratton, B.A.; Fuhrman, P.W.

    1997-03-11

    A probe is disclosed which directs a light beam through a vapor plume in a first direction at a first angle ranging from greater than 0{degree} to less than 90{degree}, reflecting the light beam back through the vapor plume at a 90{degree} angle, and then reflecting the light beam through the vapor plume a third time at a second angle equal to the first angle, using a series of mirrors to deflect the light beam while protecting the mirrors from the vapor plume with shields. The velocity, density, temperature and flow direction of the vapor plume may be determined by a comparison of the energy from a reference portion of the beam with the energy of the beam after it has passed through the vapor plume. 10 figs.

  16. Moisture Durability of Vapor Permeable Insulating Sheathing ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    drying (by virtue of its vapor permeability). However, it also allows inward-driven moisture to fow through the insulation and contact the water resisting barrier (WRB), which is ...

  17. Vapor purification with self-cleaning filter

    DOE Patents [OSTI]

    Josephson, Gary B.; Heath, William O.; Aardahl, Christopher L.

    2003-12-09

    A vapor filtration device including a first electrode, a second electrode, and a filter between the first and second electrodes is disclosed. The filter is formed of dielectric material and the device is operated by applying a first electric potential between the electrodes to polarize the dielectric material such that upon passing a vapor stream through the filter, particles from the vapor stream are deposited onto the filter. After depositing the particles a second higher voltage is applied between the electrodes to form a nonthermal plasma around the filter to vaporize the collected particles thereby cleaning the filter. The filter can be a packed bed or serpentine filter mat, and an optional upstream corona wire can be utilized to charge airborne particles prior to their deposition on the filter.

  18. Perfluorocarbon vapor tagging of blasting cap detonators

    DOE Patents [OSTI]

    Dietz, R.N.; Senum, G.I.

    A plug for a blasting cap is made of an elastomer in which is dissolved a perfluorocarbon. The perfluorocarbon is released as a vapor into the ambient over a long period of time to serve as a detectable taggant.

  19. Perfluorocarbon vapor tagging of blasting cap detonators

    DOE Patents [OSTI]

    Dietz, Russell N.; Senum, Gunnar I.

    1981-01-01

    A plug for a blasting cap is made of an elastomer in which is dissolved a perfluorocarbon. The perfluorocarbon is released as a vapor into the ambient over a long period of time to serve as a detectable taggant.

  20. Chemical vapor infiltration using microwave energy

    DOE Patents [OSTI]

    Devlin, David J.; Currier, Robert P.; Laia, Jr., Joseph R.; Barbero, Robert S.

    1993-01-01

    A method for producing reinforced ceramic composite articles by means of chemical vapor infiltration and deposition in which an inverted temperature gradient is utilized. Microwave energy is the source of heat for the process.

  1. Water vapor distribution in protoplanetary disks

    SciTech Connect (OSTI)

    Du, Fujun; Bergin, Edwin A.

    2014-09-01

    Water vapor has been detected in protoplanetary disks. In this work, we model the distribution of water vapor in protoplanetary disks with a thermo-chemical code. For a set of parameterized disk models, we calculate the distribution of dust temperature and radiation field of the disk with a Monte Carlo method, and then solve the gas temperature distribution and chemical composition. The radiative transfer includes detailed treatment of scattering by atomic hydrogen and absorption by water of Lyα photons, since the Lyα line dominates the UV spectrum of accreting young stars. In a fiducial model, we find that warm water vapor with temperature around 300 K is mainly distributed in a small and well-confined region in the inner disk. The inner boundary of the warm water region is where the shielding of UV field due to dust and water itself become significant. The outer boundary is where the dust temperature drops below the water condensation temperature. A more luminous central star leads to a more extended distribution of warm water vapor, while dust growth and settling tends to reduce the amount of warm water vapor. Based on typical assumptions regarding the elemental oxygen abundance and the water chemistry, the column density of warm water vapor can be as high as 10{sup 22} cm{sup –2}. A small amount of hot water vapor with temperature higher than ∼300 K exists in a more extended region in the upper atmosphere of the disk. Cold water vapor with temperature lower than 100 K is distributed over the entire disk, produced by photodesorption of the water ice.

  2. Defect Structure of Epitaxial CrxV1 − x Thin Films on MgO(001)

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.; Shutthanandan, V.; Manandhar, Sandeep; Van Ginhoven, Renee M.; Wirth, Brian D.; Kurtz, Richard J.

    2014-01-01

    Epitaxial thin films of CrxV1-x over the entire composition range were deposited on MgO(001) by molecular beam epitaxy. The films exhibited the expected 45° in-plane rotation with no evidence of phase segregation or spinodal decomposition. Pure Cr, with the largest lattice mismatch to MgO, exhibited full relaxation and cubic lattice parameters. As the lattice mismatch decreased with alloy composition, residual epitaxial strain was observed. For 0.2 ≤ x ≤ 0.4 the films were coherently strained to the substrate with associated tetragonal distortion; near the lattice-matched composition of x = 0.33, the films exhibited strain-free pseudomorphic matching to MgO. Unusually, films on the Cr-rich side of the lattice-matched composition exhibited more in-plane compression than expected from the bulk lattice parameters; this result was confirmed with both x-ray diffraction and Rutherford backscattering spectrometry channeling measurements. Although thermal expansion mismatch in the heterostructure may play a role, the dominant mechanism for this phenomenon is still unknown. High resolution transmission electron microscopy was utilized to characterize the misfit dislocation network present at the film/MgO interface. Dislocations were found to be present with a non-uniform distribution, which is attributed to the Volmer-Weber growth mode of the films. The CrxV1-x / MgO(001) system can serve as a model system to study both the fundamentals of defect formation in bcc films and the interplay between nanoscale defects such as dislocations and radiation damage.

  3. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, P.

    1998-06-02

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma. 5 figs.

  4. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, Paul

    1998-01-01

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

  5. Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions: The driving force for creating new structures with integrated functionality

    SciTech Connect (OSTI)

    Zhu, Yuanyuan; Zhang, Wenrui [Program of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States); Zhou, Honghui; Narayan, Jagdish [Department of Materials Science and Engineering, NSF Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, North Carolina 27695 (United States); MacManus-Driscoll, Judith L. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Jia, Quanxi [Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Program of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States)

    2013-11-01

    Here, we report detailed strain mapping analysis at heterointerfaces of a new multiferroic complex oxide Bi{sub 3}Fe{sub 2}Mn{sub 2}O{sub x}(BFMO322) supercell and related layered structures. The state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and the modified geometric phase analysis (GPA) have been used to characterize the self-assembled transitional layers, misfit defects, and, in particular, the biaxial lattice strain distributions. We found that not only a sufficient lattice misfit is required through substrate selection and to be preserved in initial coherent epilayer growth, but also an appropriate interfacial reconstruction is crucial for triggering the growth of the new BFMO322 supercell structure. The observation of new transitional interfacial phases behaving like coherent film layers within the critical thickness challenges the conventional understanding in existing epitaxial growth model.

  6. Thermo-Physical Properties and Equilibrium Vapor-Composition of Lithium Fluoride-Beryllium Fluoride (2LiF/BeF{sub 2}) Molten Salt

    SciTech Connect (OSTI)

    Zaghloul, Mofreh R.; Sze, D.K.; Raffray, A. Rene

    2003-09-15

    An assessment of Flibe thermo-physical properties relevant to the prompt x-rays ablation of the liquid wall is presented with emphasis given to the equilibrium vapor composition and vapor pressure. The available data sets for Flibe thermo-physical properties, which cover a very narrow range of temperature have been extended and adjusted to cover the whole range of the liquid phase and to assure consistency with the estimated critical constants. Investigation of the equilibrium vapor composition showed a contradiction with previously published results regarding the stability of the mixed dimmer LiBeF{sub 3}. New results for the vapor composition and total vapor pressure of Flibe also have been presented, compared to previous results, and used to calculate the temperature-dependent latent heat of vaporization.

  7. Gas-phase propane fuel delivery system

    SciTech Connect (OSTI)

    Clements, J.

    1991-04-30

    This patent describes a gas-phase fuel delivery system for delivering a vapor phase fuel independent of exterior temperatures. It comprises:a storage tank for storing a volume of fuel; a regulator in fluid communication with the tank for receiving fuel from the tank and for outputting the fuel in a vapor phase; a pressure sensor in fluid communication with the tank for monitoring pressure within the tank, the pressure sensor being operative to generate a pump enable signal when the pressure within the tank is less than a predetermined threshold; a pump in fluid communication with the tank.

  8. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  9. Epitaxial growth of high quality WO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leng, X.; Pereiro, J.; Strle, J.; Bollinger, A. T.; Bozovic, I.

    2015-09-09

    We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.

  10. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOE Patents [OSTI]

    Eres, D.; Sharp, J.W.

    1996-07-30

    A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 5 figs.

  11. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOE Patents [OSTI]

    Eres, Djula; Sharp, Jeffrey W.

    1996-01-01

    A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.

  12. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  13. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  14. Performance assessment of the In-Well Vapor-Stripping System

    SciTech Connect (OSTI)

    Gilmore, T.J.; White, M.D.; Spane, F.A. Jr.

    1996-10-01

    In-well vapor stripping is a remediation technology designed to preferentially extract volatile organic compounds dissolved in groundwater by converting them to a vapor phase and then treating the vapor. This vapor-stripping system is distinctly different from the more traditional in situ air-sparging concept. In situ sparging takes place in the aquifer formation; in-well vapor stripping takes place within the well casing. The system was field demonstrated at Edwards Air Force Base, California; the first-time demonstration of this technology in the United States. Installation and testing of the system were completed in late 1995, and the demonstration was operated nearly continuously for 6 months (191 days) between January 16 and July 25, 1996. Postdemonstration hydrochemical sampling continued until September 1996. The demonstration was conducted by collaborating researchers from Pacific Northwest National Laboratory (a) and Stanford University as part of an interim cleanup action at the base. Edwards Air Force Base and its environmental subcontractor, Earth Technology Corporation, as well as EG&G Environmental, holders of the commercial rights to the technology, were also significant contributors to the demonstration.

  15. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, T.

    1988-03-15

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

  16. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2007-10-23

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  17. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2006-07-26

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  18. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, Terry (Tracy, CA)

    1988-01-01

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself.

  19. Temperature, Water Vapor, and Clouds"

    Office of Scientific and Technical Information (OSTI)

    on "Microwave and Millimeter-Wave Radiometric Studies of Temperature, Water Vapor, and Clouds" Project ID: 0011106 Program Managers: Kirankumar V. Alapaty Phone: 301-903-3175 Division: SC-23.3 and Wanda R. Ferrell Phone: 301-903-0043 Division: SC-23.3 PI: Edgeworth R. Westwater Award Register#: ER640150011106 Overview of Project The importance of accurate measurements of column amounts of water vapor and cloud liquid has been well documented by scientists within the Atmospheric

  20. Method and Apparatus for Concentrating Vapors for Analysis

    DOE Patents [OSTI]

    Grate, Jay W.; Baldwin, David L.; Anheier, Jr., Norman C.

    2008-10-07

    An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

  1. Gasoline distribution cycle and vapor emissions in Mexico City metropolitan area

    SciTech Connect (OSTI)

    Molina, M.M.; Secora, I.S.; Gallegos, J.R.M.; Grapain, V.M.G.; Villegas, F.M.R.; Flores, L.A.M.

    1997-12-31

    Ozone in the main air pollutant in Mexico City Metropolitan Area (MCMA). This kind of pollution is induced by the emissions of nitrogen oxides and hydrocarbons. According to Official Statistics National Air Pollution Quality Standard is exceeded over 300 days a year. Volatile hydrocarbons are generated in the cycle of storage transport and distribution of fuel (Gasoline Distribution Cycle). Above 17 millions of liters are handled daily in MCMA. Evaporative emission control is a complex task involving: floating roof tanks and vapor recovery units installation at bulk terminals and implementation of Phase 1 and Phase 2 vapor recovery systems at service stations. Since 1990, IMP has been involved in researching vapor emissions associated to gasoline storage and distribution cycle. Besides, the authors evaluate several technologies for bulk terminals and service stations. In this job, the authors present the results of an evaluation according to Mexican Official Standard of 500 vehicles. The gasoline vapors are trapped during refueling of cars and they are conduced to an equipment that includes an activated charcoal canister in order to adsorb them. Another Activated charcoal canister adsorbs ambient air as a reference. Experimental results showed that refueling hydrocarbon emissions are between 0.4 and 1.2 grams per liter with averages of 0.79 and 0.88 grams per liter according with two different gasoline types. These results were applied to Mexico City Vehicular fleet for the gasoline distribution cycle in order to obtain a total volatile hydrocarbon emission in Mexico City Metropolitan Area.

  2. Growth of epitaxial films of sodium potassium tantalate and niobate on

    Office of Scientific and Technical Information (OSTI)

    single-crystal lanthanum aluminate [100] substrates (Journal Article) | SciTech Connect Growth of epitaxial films of sodium potassium tantalate and niobate on single-crystal lanthanum aluminate [100] substrates Citation Details In-Document Search Title: Growth of epitaxial films of sodium potassium tantalate and niobate on single-crystal lanthanum aluminate [100] substrates Epitaxial films of sodium potassium tantalate (Na{sub 0.5}K{sub 0.5}TaO{sub 3}, NKT) and sodium potassium niobate

  3. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  4. Vapor pressures of the polychlorinated naphthalenes

    SciTech Connect (OSTI)

    Lei, Y.D.; Shiu, W.Y.; Wania, F.

    1999-05-01

    The vapor pressures of the supercooled liquid P{sub L} for 17 polychlorinated naphthalene congeners were determined as a function of temperature with a gas chromatographic retention time technique. The method was calibrated with vapor pressure data for polychlorinated biphenyls (PCBs) which had been measured by other techniques. These data were employed to predict temperature-dependent vapor pressures for all polychlorinated naphthalenes (PCNs) from a regression with published retention time indices. Enthalpies of vaporization {Delta}{sub VAP}H and activity coefficients in 1-octanol were calculated for the PCNs and compared with those for polychlorinated biphenyls. Data analysis suggests that the dependence of P{sub L} and {Delta}{sub VAP}H on molecular size, as well as the partitioning behavior into 1-octanol of the PCNs, is very similar to that of coplanar PCBs, i.e., those congeners with no or only one chlorine substitution in the ortho positions. The affinity of these chemicals to 1-octanol increases with the degree of chlorination.

  5. Advancing Explosives Detection Capabilities: Vapor Detection

    SciTech Connect (OSTI)

    Atkinson, David

    2012-10-15

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  6. Advancing Explosives Detection Capabilities: Vapor Detection

    ScienceCinema (OSTI)

    Atkinson, David

    2014-07-24

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  7. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  8. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect (OSTI)

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductorTI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (?6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  9. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  10. Use Vapor Recompression to Recover Low-Pressure Waste Steam ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vapor Recompression to Recover Low-Pressure Waste Steam Use Vapor Recompression to Recover Low-Pressure Waste Steam This tip sheet on recovering low-pressure waste steam provides ...

  11. ARM: Microwave Water Radiometer (MWR): water liq. and vapor along...

    Office of Scientific and Technical Information (OSTI)

    Microwave Water Radiometer (MWR): water liq. and vapor along line of sight (LOS) path Title: ARM: Microwave Water Radiometer (MWR): water liq. and vapor along line of sight (LOS) ...

  12. Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-10-01

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  13. Strain controlled metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect (OSTI)

    Xiang, P.-H. Zhong, N.; Duan, C.-G.; Tang, X. D.; Hu, Z. G.; Yang, P. X.; Zhu, Z. Q.; Chu, J. H.

    2013-12-28

    We have fabricated epitaxial thin films of NdNiO{sub 3} (NNO) on various single crystal substrates. The transport properties of NNO films are very sensitive to substrate-controlled epitaxial strain. As the strain varies from tensile to compressive, the Mott metal-insulator transition of NNO films shifts to low temperatures. Under a larger compressive strain, the film on LaSrAlO{sub 4} substrate exhibits a practically metallic transport characteristic. We have found that the conductivities of NNO films at low temperatures follow Mott's variable range hopping mechanism rather than thermal activation model and the epitaxial strain has a strong effect on Mott's parameters of NNO films. These findings demonstrate that the electronic transport of NNO thin films can be tuned by the epitaxial strain for next-generation perovskite-based microelectronic devices.

  14. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  15. High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Maeda, Y.; Yamada, S.; Ando, Y.; Yamane, K.; Miyao, M.; Hamaya, K.

    2010-11-08

    We demonstrate atomically controlled heterojunctions consisting of ferromagnetic CoFe alloys and silicon (Si) using low-temperature molecular beam epitaxy with a good atomic matching at the (111) plane. The saturation magnetization of the CoFe layers grown reaches {approx}85% of the value of bulk samples reported so far, and can be systematically controlled by tuning the ratio of Co to Fe, indicating that the silicidation reactions between CoFe and Si are suppressed and the heterojunctions are very high quality. We find that the Schottky barrier height of the high-quality CoFe/Si(111) junctions is unexpectedly low compared to the previous data for other metal/Si ones, implying the reduction in the Fermi-level-pinning effect. We can expand the available high-quality ferromagnet/Si heterostructures in the field of Si-based spintronics.

  16. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to

    Office of Scientific and Technical Information (OSTI)

    Glass. (Journal Article) | SciTech Connect Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Abstract not provided. Authors: Biedermann, Laura ; Beechem Iii, Thomas Edwin ; Ohta, Taisuke ; Howell, Stephen Wayne ; Ross, Anthony J. III Publication Date: 2010-06-01 OSTI Identifier: 1142067 Report Number(s): SAND2010-4200J Journal ID: ISSN

  17. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details In-Document Search Title: Epitaxial ternary nitride thin films prepared by a chemical solution method × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  18. Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy;

    Office of Scientific and Technical Information (OSTI)

    Article No. 182105 (Journal Article) | SciTech Connect Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Citation Details In-Document Search Title: Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Authors: Sanders, Charlotte E. ; Beaton, Daniel A. ; Reedy, Robert C. ; Alberi, Kristin Publication Date: 2015-05-04 OSTI Identifier: 1220719 Report Number(s): NREL/JA-5K00-64047 Resource Type: Journal Article

  19. LARGE-AREA EPITAXIAL GRAPHENE LAYER. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Citation Details In-Document Search Title: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Abstract not provided. Authors: Ohta, Taisuke Publication Date: 2015-01-01 OSTI Identifier: 1244915 Report Number(s): SAND2015-0261D 562156 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2F hallway, building 897 in Albuquerque, NM. Research Org: Sandia National Laboratories (SNL-NM),

  20. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN

    Office of Scientific and Technical Information (OSTI)

    Quantum Dots (Journal Article) | SciTech Connect Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots Citation Details In-Document Search Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots Authors: Xiao, Xiaoyin ; Fischer, Arthur J. ; Wang, George T. ; Lu, Ping ; Koleske, Daniel D. ; Coltrin, Michael E. ; Wright, Jeremy B. ; Liu, Sheng ; Brener, Igal ; Subramania, Ganesh ; Tsao, Jeffrey Y. Publication Date:

  1. Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Citation Details In-Document Search Title: Rotationally Commensurate Growth of MoS[subscript 2] on Epitaxial Graphene Authors: Liu, Xiaolong ; Balla, Itamar ; Bergeron, Hadallia ; Campbell, Gavin P. ; Bedzyk, Michael J. ; Hersam, Mark C. [1] + Show Author Affiliations NWU Publication Date: 2016-03-04 OSTI Identifier: 1240188 Resource Type: Journal Article Resource Relation: Journal

  2. Effect of L1{sub 2} ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

    SciTech Connect (OSTI)

    Chang, Y. C.; Duh, J. G. E-mail: lin.yg@nsrrc.org.tw; Hsiao, S. N. E-mail: lin.yg@nsrrc.org.tw; Liu, S. H.; Su, S. H.; Chiu, K. F.; Hsieh, W. C.; Chen, S. K.; Lin, Y. G. E-mail: lin.yg@nsrrc.org.tw; Lee, H. Y.; Sung, C. K.

    2015-05-07

    Two series of samples of single-layer IrMn and IrMn/FePd bilayer films, deposited on a single-crystal MgO substrate at different IrMn deposition temperatures (T{sub s} = 300–700 °C), were investigated using magnetron sputtering. L1{sub 2} ordering was revealed for the 30 nm-thick IrMn epitaxial (001) films with T{sub s} ≥ 400 °C, determined by synchrotron radiation x-ray diffractometry (XRD). XRD results also provide evidence of the epitaxial growth of the IrMn films on MgO substrate. Increasing T{sub s} from 400 to 700 °C monotonically increases the ordering parameter of L1{sub 2} phases from 0.17 to 0.81. An in-plane exchange bias field (H{sub eb}) of 22 Oe is obtained in a 10 nm-thick FePd film that is deposited on the disordered IrMn films. As the L1{sub 2} ordering of the IrMn layers increases, the H{sub eb} gradually decreases to 0 Oe, meaning that the exchange bias behavior vanishes. The increased surface roughness, revealed by atomic force microscopy, of the epitaxial IrMn layers with increasing T{sub s} cannot be the main cause of the decrease in H{sub eb} due to the compensated surface spins regardless of the disordered and ordered (001) IrMn layers. The change of antiferromagnetic structure from the A1 to the L1{sub 2} phase was correlated with the evolution of H{sub eb}.

  3. Structural and chemical ordering of Heusler CoxMnyGez epitaxial films on Ge (111). Quantitative study using traditional and anomalous x-ray diffraction techniques

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Collins, B. A.; Chu, Y.; He, L.; Haskel, D.; Tsui, F.

    2015-12-14

    We found that epitaxial films of CoxMnyGez grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy Co2MnGe has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections acrossmore » each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. Furthermore, the quantitative MEAD analysis reveals no detectable amount (<0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry (Co 0.5 Mn 0.25 Ge 0.25 ) is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.« less

  4. Growth of Ca{sub 2}MnO{sub 4} Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

    SciTech Connect (OSTI)

    Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W.; Grygiel, C.; Rohrer, G. S.; Salvador, P. A.; Velazquez, M.; Kloe, R. de

    2014-12-28

    The local epitaxial growth of pulsed laser deposited Ca{sub 2}MnO{sub 4} films on polycrystalline spark plasma sintered Sr{sub 2}TiO{sub 4} substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650?C and 800?C) was found to be 750?C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca{sub 2}MnO{sub 4} grain had a single OR with the Sr{sub 2}TiO{sub 4} grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001]{sub film}||[100][001]{sub sub}. The other two ORs were essentially rotated from the first by 90, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.

  5. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, E.R.; Alger, T.W.

    1995-03-07

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube. 5 figs.

  6. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, Earl R.; Alger, Terry W.

    1995-01-01

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube.

  7. DuPont Chemical Vapor Technical Report

    SciTech Connect (OSTI)

    MOORE, T.L.

    2003-10-03

    DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH&Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations.

  8. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, T.W.; Ault, E.R.; Moses, E.I.

    1992-12-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment. 2 figs.

  9. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C.; Rocheleau, Richard E.

    1987-03-31

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  10. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, Terry W.; Ault, Earl R.; Moses, Edward I.

    1992-01-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

  11. Combined rankine and vapor compression cycles

    DOE Patents [OSTI]

    Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

    2005-04-19

    An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

  12. Heat storage system utilizing phase change materials government rights

    DOE Patents [OSTI]

    Salyer, Ival O.

    2000-09-12

    A thermal energy transport and storage system is provided which includes an evaporator containing a mixture of a first phase change material and a silica powder, and a condenser containing a second phase change material. The silica powder/PCM mixture absorbs heat energy from a source such as a solar collector such that the phase change material forms a vapor which is transported from the evaporator to the condenser, where the second phase change material melts and stores the heat energy, then releases the energy to an environmental space via a heat exchanger. The vapor is condensed to a liquid which is transported back to the evaporator. The system allows the repeated transfer of thermal energy using the heat of vaporization and condensation of the phase change material.

  13. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAsmore » and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.« less

  14. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable IIIV photovoltaics

    SciTech Connect (OSTI)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 ?m and ~8 ?m, respectively. Hall mobilities approach those achieved for GaAs grown by metalorganic chemical vapor deposition, 10004200 cm2 V1 s1 for n-GaAs and 50240 cm V1 s1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.

  15. Structural perturbations of epitaxial ?-(Fe{sub 1?x}V{sub x}){sub 2}O{sub 3} thin films driven by excess oxygen near the surface

    SciTech Connect (OSTI)

    Chamberlin, S. E.; Kaspar, T. C.; Chambers, S. A.; Bowden, M. E.; Shutthanandan, V.; Kabius, B.; Heald, S.; Keavney, D. J.

    2014-12-21

    We examine the structure and composition of phase-pure epitaxial ?-(Fe{sub 1?x}V{sub x}){sub 2}O{sub 3} thin films deposited on ?-Al{sub 2}O{sub 3}(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0???x????0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth has an impact on local bonding geometries, and could be highly significant in this material's efficiency as a photocatalyst.

  16. Synthesis of alloys with controlled phase structure

    DOE Patents [OSTI]

    Guthrie, S.E.; Thomas, G.J.; Bauer, W.; Yang, N.Y.C.

    1999-04-20

    A method is described for preparing controlled phase alloys useful for engineering and hydrogen storage applications. This novel method avoids melting the constituents by employing vapor transport, in a hydrogen atmosphere, of an active metal constituent, having a high vapor pressure at temperatures {approx_equal}300 C and its subsequent condensation on and reaction with the other constituent (substrate) of an alloy thereby forming a controlled phase alloy and preferably a single phase alloy. It is preferred that the substrate material be a metal powder such that diffusion of the active metal constituent, preferably magnesium, and reaction therewith can be completed within a reasonable time and at temperatures {approx_equal}300 C thereby avoiding undesirable effects such as sintering, local compositional inhomogeneities, segregation, and formation of unwanted second phases such as intermetallic compounds. 4 figs.

  17. Synthesis of alloys with controlled phase structure

    DOE Patents [OSTI]

    Guthrie, Stephen Everett; Thomas, George John; Bauer, Walter; Yang, Nancy Yuan Chi

    1999-04-20

    A method for preparing controlled phase alloys useful for engineering and hydrogen storage applications. This novel method avoids melting the constituents by employing vapor transport, in a hydrogen atmosphere, of an active metal constituent, having a high vapor pressure at temperatures .apprxeq.300 C. and its subsequent condensation on and reaction with the other constituent (substrate) of an alloy thereby forming a controlled phase alloy and preferably a single phase alloy. It is preferred that the substrate material be a metal powder such that diffusion of the active metal constituent, preferably magnesium, and reaction therewith can be completed within a reasonable time and at temperatures .apprxeq.300 C. thereby avoiding undesirable effects such as sintering, local compositional inhomogeneities, segregation, and formation of unwanted second phases such as intermetallic compounds.

  18. Real-time observation of epitaxial graphene domain reorientation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thuermer, Konrad; Foster, Michael E.; Bartelt, Norman Charles; Rogge, Paul C.; Lawrence Berkeley National Lab.; McCarty, Kevin F.; Dubon, Oscar D.; Lawrence Berkeley National Lab.; Bartelt, Norman C.

    2015-04-20

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening’; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV permore » C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This study suggests new strategies for improving the van der Waals epitaxy of 2D materials.« less

  19. Strain control of oxygen vacancies in epitaxial strontium cobaltite films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jeen, Hyoung Jeen; Choi, Woo Seok; Reboredo, Fernando A.; Freeland, John W.; Eres, Gyula; Lee, Ho Nyung; Petrie, Jonathan R.; Mitra, Chandrima; Meyer, Tricia L.

    2016-01-25

    In this study, the ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 °C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ≈30%, resulting inmore » a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.« less

  20. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  1. Controlled epitaxial graphene growth within removable amorphous carbon corrals

    SciTech Connect (OSTI)

    Palmer, James; Hu, Yike; Hankinson, John; Guo, Zelei; Heer, Walt A. de; Kunc, Jan; Berger, Claire

    2014-07-14

    We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200?C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330?C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

  2. Copper vapor laser acoustic thermometry system

    DOE Patents [OSTI]

    Galkowski, Joseph J.

    1987-01-01

    A copper vapor laser (CVL) acoustic thermometry system is disclosed. The invention couples an acoustic pulse a predetermined distance into a laser tube by means of a transducer and an alumina rod such that an echo pulse is returned along the alumina rod to the point of entry. The time differential between the point of entry of the acoustic pulse into the laser tube and the exit of the echo pulse is related to the temperature at the predetermined distance within the laser tube. This information is processed and can provide an accurate indication of the average temperature within the laser tube.

  3. New Regenerative Cycle for Vapor Compression Refrigeration

    Office of Scientific and Technical Information (OSTI)

    SCIENTIFIC REPORT Title Page Project Title: New Regenerative Cycle for Vapor Compression Refrigeration DOE Award Number: DE-FG36-04GO14327 Document Title: Final Scientific Report Period Covered by Report: September 30, 2004 to September 30, 2005 Name and Address of Recipient Organization: Magnetic Development, Inc., 68 Winterhill Road, Madison, CT 06443, phone: 203-214-7247, fax: 203-421-7948, e-mail: mjb1000@aol.com Contact Information: Mark J. Bergander, Ph.D., P.E., Principal Investigator,

  4. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, Joel M.; Wylie, Allan H.

    1996-01-01

    A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

  5. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, J.M.; Wylie, A.H.

    1996-01-09

    A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

  6. CHEMISTRY OF IMPACT-GENERATED SILICATE MELT-VAPOR DEBRIS DISKS

    SciTech Connect (OSTI)

    Visscher, Channon; Fegley, Bruce Jr.

    2013-04-10

    In the giant impact theory for lunar origin, the Moon forms from material ejected by the impact into an Earth-orbiting disk. Here we report the initial results from a silicate melt-vapor equilibrium chemistry model for such impact-generated planetary debris disks. In order to simulate the chemical behavior of a two-phase (melt+vapor) disk, we calculate the temperature-dependent pressure and chemical composition of vapor in equilibrium with molten silicate from 2000 to 4000 K. We consider the elements O, Na, K, Fe, Si, Mg, Ca, Al, Ti, and Zn for a range of bulk silicate compositions (Earth, Moon, Mars, eucrite parent body, angrites, and ureilites). In general, the disk atmosphere is dominated by Na, Zn, and O{sub 2} at lower temperatures (<3000 K) and SiO, O{sub 2}, and O at higher temperatures. The high-temperature chemistry is consistent for any silicate melt composition, and we thus expect abundant SiO, O{sub 2}, and O to be a common feature of hot, impact-generated debris disks. In addition, the saturated silicate vapor is highly oxidizing, with oxygen fugacity (f{sub O{sub 2}}) values (and hence H{sub 2}O/H{sub 2} and CO{sub 2}/CO ratios) several orders of magnitude higher than those in a solar-composition gas. High f{sub O{sub 2}} values in the disk atmosphere are found for any silicate composition because oxygen is the most abundant element in rock. We thus expect high oxygen fugacity to be a ubiquitous feature of any silicate melt-vapor disk produced via collisions between rocky planets.

  7. Reactive multilayers fabricated by vapor deposition. A critical review

    SciTech Connect (OSTI)

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, with most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.

  8. Reactive multilayers fabricated by vapor deposition. A critical review

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, withmore » most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.« less

  9. G-Band Vapor Radiometer Profiler (GVRP) Handbook

    SciTech Connect (OSTI)

    Caddeau, MP

    2010-06-23

    The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

  10. Method and apparatus for concentrating vapors for analysis

    DOE Patents [OSTI]

    Grate, Jay W.; Baldwin, David L.; Anheier, Jr., Norman C.

    2012-06-05

    A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

  11. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  12. An optical water vapor sensor for unmanned aerial vehicles (Technical

    Office of Scientific and Technical Information (OSTI)

    Report) | SciTech Connect An optical water vapor sensor for unmanned aerial vehicles Citation Details In-Document Search Title: An optical water vapor sensor for unmanned aerial vehicles The water vapor sensor developed by Aerodyne Research, based on the optical absorption of light at {approximately}935 nm, has been successfully demonstrated on board the Pacific Northwest National Laboratory's Gulfstream-1 research aircraft during the Department of Energy's ARM Intensive Operations Period in

  13. Method for controlling corrosion in thermal vapor injection gases

    DOE Patents [OSTI]

    Sperry, John S. (Houston, TX); Krajicek, Richard W. (Houston, TX)

    1981-01-01

    An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

  14. Investigation of odd-order nonlinear susceptibilities in atomic vapors

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Investigation of odd-order nonlinear susceptibilities in atomic vapors Citation Details In-Document Search Title: Investigation of odd-order nonlinear susceptibilities in atomic vapors We theoretically deduce the macroscopic symmetry constraints for arbitrary odd-order nonlinear susceptibilities in homogeneous media including atomic vapors for the first time. After theoretically calculating the expressions

  15. Review of enhanced vapor diffusion in porous media

    SciTech Connect (OSTI)

    Webb, S.W.; Ho, C.K.

    1998-08-01

    Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

  16. Giant Magneto-Resistance in Epitaxial (La0.7Sr0.3MnO3)0.5: (ZnO...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 77 NANOSCIENCE AND NANOTECHNOLOGY; CAI suggestions; ZINC OXIDES; MAGNETORESISTANCE; EPITAXY; NANOCOMPOSITES; ...

  17. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    SciTech Connect (OSTI)

    Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

    2011-05-15

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  18. Manufacturing Cost Analysis Relevant to Single-and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon (Presentation)

    SciTech Connect (OSTI)

    Woodhouse, M.; Goodrich, A.

    2014-05-01

    In this analysis we examine the current, mid-term, and long-term manufacturing costs for III-Vs deposited by traditional Metal Organic Vapor Phase Epitaxy (MOVPE).

  19. Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al...

    Open Energy Info (EERE)

    to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al., 2002) Exploration Activity Details...

  20. Mercury Vapor At Mokapu Penninsula Area (Thomas, 1986) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mokapu Penninsula Area (Thomas, 1986) Exploration Activity Details Location...

  1. Mercury Vapor At Lualualei Valley Area (Thomas, 1986) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lualualei Valley Area (Thomas, 1986) Exploration Activity Details Location...

  2. Mercury Vapor At Kawaihae Area (Thomas, 1986) | Open Energy Informatio...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Kawaihae Area (Thomas, 1986) Exploration Activity Details Location Kawaihae...

  3. Mercury Vapor At Mauna Loa Northeast Rift Area (Thomas, 1986...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mauna Loa Northeast Rift Area (Thomas, 1986) Exploration Activity Details...

  4. Mercury Vapor At Socorro Mountain Area (Kooten, 1987) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Socorro Mountain Area (Kooten, 1987) Exploration Activity Details Location...

  5. New Vapor-Particle Separator Improves Understanding of Aircraft...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    separate volatile particles from condensible vapors in aircraft engine emissions. ... of the combustion process of modern jet engines and the formation process of ...

  6. Mercury Vapor At Medicine Lake Area (Kooten, 1987) | Open Energy...

    Open Energy Info (EERE)

    Medicine Lake Area (Kooten, 1987) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Medicine Lake Area (Kooten, 1987) Exploration...

  7. Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal...

    Open Energy Info (EERE)

    & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal Facility Facility Glenwood Springs...

  8. Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...

    Open Energy Info (EERE)

    Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2002) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Gravity Survey...

  9. Mercury Vapor At Mccoy Geothermal Area (DOE GTP) | Open Energy...

    Open Energy Info (EERE)

    Mccoy Geothermal Area (DOE GTP) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mccoy Geothermal Area (DOE GTP) Exploration...

  10. Direct-Current Resistivity Survey At Cove Fort Area - Vapor ...

    Open Energy Info (EERE)

    2002) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Direct-Current Resistivity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2002)...

  11. Numerical modeling of water injection into vapor-dominatedgeothermal...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Numerical modeling of water injection into vapor-dominatedgeothermal reservoirs Citation Details In-Document Search Title: Numerical modeling of water injection ...

  12. Numerical modeling of water injection into vapor-dominatedgeothermal...

    Office of Scientific and Technical Information (OSTI)

    Water injection has been recognized as a powerful techniquefor enhancing energy recovery from vapor-dominated geothermal systemssuch as The Geysers. In addition to increasing ...

  13. Structure of epitaxial (Fe,N) codoped rutile TiO2 thin films by x-ray absorption

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Ney, A.; Mangham, Andrew N.; Heald, Steve M.; Joly, Yves; Ney, V.; Wilhelm, F.; Rogalev, A.; Yakou, Flora; Chambers, Scott A.

    2012-07-23

    Homoepitaxial thin films of Fe:TiO2 and (Fe,N):TiO2 were deposited on rutile(110) by molecular beam epitaxy. X-ray absorption near edge spectroscopy (XANES) spectra were collected at the Ti L-edge, Fe L-edge, O K-edge, N K-edge, and Ti K-edge. No evidence of structural disorder associated with a high concentration of oxygen vacancies is observed. Substitution of Fe for Ti could not be confirmed, although secondary phase Fe2O3 and metallic Fe can be ruled out. The similarity of the N K-edge spectra to O, and the presence of a strong x-ray linear dichroism (XLD) signal for the N K-edge, indicates that N is substitutional for O in the rutile lattice, and is not present as a secondary phase such as TiN. Simulations of the XANES spectra qualitatively confirm substitution, although N appears to be present in more than one local environment. Neither Fe:TiO2 nor (Fe,N):TiO2 exhibit intrinsic room temperature ferromagnetism, despite the presence of mixed valence Fe(II)/Fe(III) in the reduced (Fe,N):TiO2 film.

  14. Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy

    SciTech Connect (OSTI)

    Pillai, P. B. E-mail: m.desouza@sheffield.ac.uk; DeSouza, M. E-mail: m.desouza@sheffield.ac.uk; Narula, R.; Reich, S.; Wong, L. Y.; Batten, T.; Pokorny, J.

    2015-05-14

    Signatures of a superlattice structure composed of a quasi periodic arrangement of atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits a laser excitation energy dependant red shift of the 2D mode as compared to pristine epitaxial graphene. The phonon dispersions in both the systems are mapped using the experimentally observed Raman signatures and a third-nearest neighbour tight binding electronic band structure model. Our results reveal that the observed excitation dependent Raman red shift in gold EG primarily arise from the modifications of the phonon dispersion in gold-graphene and shows that the extent of decoupling of graphene from the underlying SiC substrate can be monitored from the dispersive nature of the Raman 2D modes. The intercalated gold atoms restore the phonon band structure of epitaxial graphene towards free standing graphene.

  15. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R.; Knepper, Jacob W.; Yang Fengyuan

    2011-04-18

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  16. Vapor and gas sampling of the single-shell tank 241-S-101 using the in situ vapor sampling system

    SciTech Connect (OSTI)

    Lockrem, L.L.

    1997-08-05

    The Vapor Issue Resolution Program tasked the Vapor Team (VT) to collect representative headspace samples from Hanford Site single-shell tank (SST) 241-S-101. This document presents In Situ Vapor Sampling System (ISVS) data resulting from the June 6, 1996 sampling of SST 241-S-101. Analytical results will be presented in separate reports issued by the Pacific Northwest National Laboratory (PNNL) which supplied and analyzed the sample media.

  17. Structure-property correlation in epitaxial (2 0 0) rutile films on sapphire substrates

    SciTech Connect (OSTI)

    Bayati, M.R.; Joshi, Sh.; Molaei, R.; Narayan, R.J.; Narayan, J.

    2012-03-15

    We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using {phi}-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 -1 0), and rutile(0 1 0)||sapphire(1 -2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV-VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation. - Graphical abstract: In this report, epitaxial rutile TiO{sub 2} thin films were deposited by PLD process under various deposition rates (frequencies) and their physical and chemical properties, especially photocatalytic performance, were investigated. It was found that photocatalytic efficiency improves when frequency increases. This behavior was mainly related to formation of point defects which enhance the charge separation. Highlights: Black-Right-Pointing-Pointer Rutile epitaxial thin films were deposited via PLD process under different frequencies. Black-Right-Pointing-Pointer Defect characteristic was studied. Black-Right-Pointing-Pointer Photocatalytic performance of the layers was investigated.

  18. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

    SciTech Connect (OSTI)

    Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

    2012-01-01

    Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

  19. Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System

    SciTech Connect (OSTI)

    Caprio, G.S.

    1995-11-01

    This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

  20. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect (OSTI)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  1. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  2. Structural and magnetic properties of stoichiometric epitaxial CoO/Fe

    Office of Scientific and Technical Information (OSTI)

    exchange-bias bilayers (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Structural and magnetic properties of stoichiometric epitaxial CoO/Fe exchange-bias bilayers Citation Details In-Document Search Title: Structural and magnetic properties of stoichiometric epitaxial CoO/Fe exchange-bias bilayers We present a detailed study of the magnetic and structural properties of the CoO/Fe bilayers by using a combination of x-ray diffraction (crystalline

  3. Epitaxial Cr on n-SrTiO3(001)An ideal Ohmic contact

    SciTech Connect (OSTI)

    Capan, Cigdem; Sun, Guangyuan; Bowden, Mark E.; Chambers, Scott A.

    2012-01-30

    Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

  4. Epitaxial Cr on n-SrTiO{sub 3}(001) - An ideal Ohmic contact

    SciTech Connect (OSTI)

    Capan, C.; Sun, G. Y.; Bowden, M. E.; Chambers, S. A.

    2012-01-30

    Epitaxial Cr metallizations grown on n-SrTiO{sub 3}(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO{sub 2} layer, no reduction of the SrTiO{sub 3}, and a near-perfect Ohmic contact. Cr/n-SrTiO{sub 3}(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

  5. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gallium Arsenide (GaAs) Photovoltaics | Department of Energy 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO SunShot Award Amount: $125,000 Low-cost III-V cells will result in a breakthrough in photovoltaic (PV)

  6. Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire

    SciTech Connect (OSTI)

    Yaremchuk, A. F.; Starkov, A. V.; Zaikin, A. V., E-mail: lynch0000@gmail.com [National Rsearch University MIET (Russian Federation); Alekseev, A. V. [ZAO Telekom-STV (Russian Federation); Sokolov, E. M. [ZAO Epiel (Russian Federation)

    2014-12-15

    The surface photovoltage method is used to study silicon-on-sapphire epitaxial layers with a thickness of 0.30.6 ?m, which are used to fabricate p-channel MOS (metaloxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ?400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a silicon-on-sapphire structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.

  7. Effect of substrate temperature on the magnetic properties of epitaxial sputter-grown Co/Pt

    SciTech Connect (OSTI)

    Mihai, A. P.; Whiteside, A. L.; Canwell, E. J.; Marrows, C. H.; Moore, T. A.; Benitez, M. J.; McGrouther, D.; McVitie, S.; McFadzean, S.

    2013-12-23

    Epitaxial Co/Pt films have been deposited by dc-magnetron sputtering onto heated C-plane sapphire substrates. X-ray diffraction, the residual resistivity, and transmission electron microscopy indicate that the Co/Pt films are highly ordered on the atomic scale. The coercive field and the perpendicular magnetic anisotropy increase as the substrate temperature is increased from 100250?C during deposition of the Co/Pt. Measurement of the domain wall creep velocity as a function of applied magnetic field yields the domain wall pinning energy, which scales with the coercive field. Evidence for an enhanced creep velocity in highly ordered epitaxial Co/Pt is found.

  8. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Accepted Manuscript: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly

  9. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Citation Details In-Document Search Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades,

  10. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films Citation Details In-Document Search Title: Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  11. Role of carbon surface diffusion and strain on the epitaxial growth of

    Office of Scientific and Technical Information (OSTI)

    graphene on SiC(0001). (Conference) | SciTech Connect Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). Citation Details In-Document Search Title: Role of carbon surface diffusion and strain on the epitaxial growth of graphene on SiC(0001). Abstract not provided. Authors: Ohta, Taisuke Publication Date: 2011-07-01 OSTI Identifier: 1120221 Report Number(s): SAND2011-5240C 482144 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference

  12. Development of a Water Based, Critical Flow, Non-Vapor Compression cooling Cycle

    SciTech Connect (OSTI)

    Hosni, Mohammad H.

    2014-03-30

    Expansion of a high-pressure liquid refrigerant through the use of a thermostatic expansion valve or other device is commonplace in vapor-compression cycles to regulate the quality and flow rate of the refrigerant entering the evaporator. In vapor-compression systems, as the condensed refrigerant undergoes this expansion, its pressure and temperature drop, and part of the liquid evaporates. We (researchers at Kansas State University) are developing a cooling cycle that instead pumps a high-pressure refrigerant through a supersonic converging-diverging nozzle. As the liquid refrigerant passes through the nozzle, its velocity reaches supersonic (or critical-flow) conditions, substantially decreasing the refrigerant’s pressure. This sharp pressure change vaporizes some of the refrigerant and absorbs heat from the surrounding conditions during this phase change. Due to the design of the nozzle, a shockwave trips the supersonic two-phase refrigerant back to the starting conditions, condensing the remaining vapor. The critical-flow refrigeration cycle would provide space cooling, similar to a chiller, by running a secondary fluid such as water or glycol over one or more nozzles. Rather than utilizing a compressor to raise the pressure of the refrigerant, as in a vapor-cycle system, the critical-flow cycle utilizes a high-pressure pump to drive refrigerant liquid through the cooling cycle. Additionally, the design of the nozzle can be tailored for a given refrigerant, such that environmentally benign substances can act as the working fluid. This refrigeration cycle is still in early-stage development with prototype development several years away. The complex multi-phase flow at supersonic conditions presents numerous challenges to fully understanding and modeling the cycle. With the support of DOE and venture-capital investors, initial research was conducted at PAX Streamline, and later, at Caitin. We (researchers at Kansas State University) have continued development of the cycle and have gained an in-depth understanding of the governing fundamental knowledge, based on the laws of physics and thermodynamics and verified with our testing results. Through this research, we are identifying optimal working fluid and operating conditions to eventually demonstrate the core technology for space cooling or other applications.

  13. Chromium Vaporization Reduction by Nickel Coatings For SOEC Interconnect Materials

    SciTech Connect (OSTI)

    Michael V. Glazoff; Sergey N. Rashkeev; J. Stephen Herring

    2014-09-01

    The vaporization of Cr-rich volatile species from interconnect materials is a major source of degradation that limits the lifetime of planar solid oxide devices systems with metallic interconnects, including Solid Oxide Electrolysis Cells, or SOECs. Some metallic coatings (Ni, Co, and Cu) significantly reduce the Cr release from interconnects and slow down the oxide scale growth on the steel substrate. To shed additional light upon the mechanisms of such protection and find a suitable coating material for ferritic stainless steel materials, we used a combination of first-principles calculations, thermodynamics, and diffusion modeling to investigate which factors determine the quality of the Ni metallic coating at stainless steel interconnector. We found that the Cr migration in Ni coating is determined by a delicate combination of the nickel oxidation, Cr diffusion, and phase transformation processes. Although the formation of Cr2O3 oxide is more exothermic than that of NiO, the kinetic rate of the chromia formation in the coating layer and its surface is significantly reduced by the low mobility of Cr in nickel oxide and in NiCr2O4 spinel. These results are in a good agreement with diffusion modeling for Cr diffusion through Ni coating layer on the ferritic 441 steel substrate.

  14. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  15. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  16. Kinetics of wet sodium vapor complex plasma

    SciTech Connect (OSTI)

    Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

    2014-04-15

    In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.

  17. Brazing titanium-vapor-coated zirconia

    SciTech Connect (OSTI)

    Santella, M.L. ); Pak, J.J. )

    1993-04-01

    Partially stabilized zirconia was vacuum furnace brazed to itself, to nodular cast iron, and to commercially pure titanium with a Ag-30Cu-10Sn wt% filler metal. Wetting was obtained by coating the ZrO[sub 2] surfaces with Ti prior to brazing by RF sputtering or electron beam evaporation. Braze joints made with Ti-sputter-coated ZrO[sub 2] contained high levels of porosity, but those made with Ti coatings deposited by evaporation, referred to as Ti-vapor-coated, contained little or no porosity. Brazing caused the ZrO[sub 2] within about 1 mm (0.04 in.) of the joint surfaces to turn black in color, and thermodynamic analysis indicated that the discoloration was likely due to oxygen diffusion out of the ZrO[sub 2] into the Ti vapor coating during brazing. Braze joint strength was determined by flexure testing in the four-point bend arrangement, and on a more limited basis, by shear testing. The latter method was used mainly as a screening test for ZrO[sub 2]-Fe and ZrO[sub 2]-Ti joints. Flexure testing of ZrO[sub 2]-ZrO[sub 2] and ZrO[sub 2]-Fe braze joints was done at 25, 200, 400, and 575 C (77, 392, 752 and 1,067 F) in air. For flexure testing, average strengths of joint specimens decreased with increasing test temperature. The lower average strengths of ZrO[sub 2]-Fe specimens compared to those from ZrO[sub 2]-ZrO[sub 2] joints was attributed to higher residual stresses in the ceramic-to-metal joints.

  18. Method and apparatus for conducting variable thickness vapor deposition

    DOE Patents [OSTI]

    Nesslage, G.V.

    1984-08-03

    A method of vapor depositing metal on a substrate in variable thickness comprises conducting the deposition continuously without interruption to avoid formation of grain boundaries. To achieve reduced deposition in specific regions a thin wire or ribbon blocking body is placed between source and substrate to partially block vapors from depositing in the region immediately below.

  19. Similarity Solution for Multi-Phase Fluid and Heat Flow in Radial Geometry

    Energy Science and Technology Software Center (OSTI)

    1994-12-02

    SIMSOL calculates transient fluid and heat flow for a uniform geologic medium containing water (in both liquid and vapor phases) and air, surrounding a constant-strength linear heat source.

  20. Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System

    SciTech Connect (OSTI)

    2012-01-04

    HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

  1. Gas Separation Using Organic-Vapor-Resistent Membranes In Conjunctin With Organic-Vapor-Selective Membranes

    DOE Patents [OSTI]

    Baker, Richard W.; Pinnau, Ingo; He, Zhenjie; Da Costa, Andre R.; Daniels, Ramin; Amo, Karl D.; Wijmans, Johannes G.

    2003-06-03

    A process for treating a gas mixture containing at least an organic compound gas or vapor and a second gas, such as natural gas, refinery off-gas or air. The process uses two sequential membrane separation steps, one using membrane selective for the organic compound over the second gas, the other selective for the second gas over the organic vapor. The second-gas-selective membranes use a selective layer made from a polymer having repeating units of a fluorinated polymer, and demonstrate good resistance to plasticization by the organic components in the gas mixture under treatment, and good recovery after exposure to liquid aromatic hydrocarbons. The membrane steps can be combined in either order.

  2. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    SciTech Connect (OSTI)

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K.

    2015-05-15

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic ? polymorph phase of CuPc at around 6.64 with 13.30 interplanar spacing. The size of the particle as determined using Debbye Scherres formula comes out around 15.5?nm. The presence of ? phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787?cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to ?? ?* and n? ?* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  3. Integration of Global Positioning System and Scanning Water Vapor Radiometers for Precipitable Water Vapor and Cloud Liquid Path Estimates

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Integration of Global Positioning System and Scanning Water Vapor Radiometers for Precipitable Water Vapor and Cloud Liquid Path Estimates V. Mattioli and P. Basili Department of Electronic and Information Engineering University of Perugia Perugia, Italy E. R. Westwater Cooperative Institute for Research in Environmental Sciences University of Colorado National Oceanic and Atmospheric Administration Environmental Technology Laboratory Boulder, Colorado Introduction In recent years the Global

  4. Tower Water-Vapor Mixing Ratio (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Tower Water-Vapor Mixing Ratio Citation Details In-Document Search Title: Tower Water-Vapor Mixing Ratio The purpose of the Tower Water-Vapor Mixing Ratio (TWRMR) value-added ...

  5. Oxide vapor distribution from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R.; Tassano, P.L.; Tsujimoto, N.

    1995-03-01

    Oxide vapor distributions have been determined as a function of operating parameters of a high frequency sweep e-beam source combined with a programmable sweep controller. We will show which parameters are significant, the parameters that yield the broadest oxide deposition distribution, and the procedure used to arrive at these conclusions. A design-of-experimental strategy was used with five operating parameters: evaporation rate, sweep speed, sweep pattern (pre-programmed), phase speed (azimuthal rotation of the pattern), profile (dwell time as a function of radial position). A design was chosen that would show which of the parameters and parameter pairs have a statistically significant effect on the vapor distribution. Witness flats were placed symmetrically across a 25 inches diameter platen. The stationary platen was centered 24 inches above the e-gun crucible. An oxide material was evaporated under 27 different conditions. Thickness measurements were made with a stylus profilometer. The information will enable users of the high frequency e-gun systems to optimally locate the source in a vacuum system and understand which parameters have a major effect on the vapor distribution.

  6. Petrology and geochemistry of Alto Peak, a vapor-cored hydrothermal system, Leyte Province, Philippines

    SciTech Connect (OSTI)

    Reyes, A.G.; Giggenbach, W.F.; Saleras, J.R.M.; Salonga, N.D.; Vergara, M.C.

    1993-10-01

    Based on detailed petrological information on secondary mineral assemblages and the composition of fluids trapped in inclusions and discharged from five wells, the Alto Peak geothermal field was found to represent a combined vapor and liquid-dominated system. A central core or chimney, with a diameter of about 1 km, a height of some 3 km and occupied by a high gas vapor (1.1 to 5.6 molal CO{sub 2}), is surrounded by an envelope of intermediate salinity water (7,000 mg/kg Cl) with temperatures between 250 and 350 C. The transition from purely vapor-dominated to liquid-dominated zones takes place via two-phase zones occupied by fluid mixtures of highly variable compositions. Much of the lower temperature, mature neutral pH Cl water is likely to have formed during an earlier stage in the evolution of the system. High temperatures of > 300 C, and associated alteration, are limited to wells AP-1D and the lower parts of AP-2D and are ascribed to re-heating by recent magmatic intrusions. The isotopic composition of the well discharges suggests that they contain some 40 to 50% of magmatic water. Alto Peak is considered a typical example of hydrothermal systems associated with many dormant volcanoes.

  7. Microwave and Millimeter-Wave Radiometric Studies of Temperature, Water Vapor and Clouds

    SciTech Connect (OSTI)

    Westwater, Edgeworth

    2011-05-06

    The importance of accurate measurements of column amounts of water vapor and cloud liquid has been well documented by scientists within the Atmospheric Radiation Measurement (ARM) Program. At the North Slope of Alaska (NSA), both microwave radiometers (MWR) and the MWRProfiler (MWRP), been used operationally by ARM for passive retrievals of the quantities: Precipitable Water Vapor (PWV) and Liquid Water Path (LWP). However, it has been convincingly shown that these instruments are inadequate to measure low amounts of PWV and LWP. In the case of water vapor, this is especially important during the Arctic winter, when PWV is frequently less than 2 mm. For low amounts of LWP (< 50 g/m{sup 2}), the MWR and MWRP retrievals have an accuracy that is also not acceptable. To address some of these needs, in March-April 2004, NOAA and ARM conducted the NSA Arctic Winter Radiometric Experiment - Water Vapor Intensive Operational Period at the ARM NSA/Adjacent Arctic Ocean (NSA/AAO) site. After this experiment, the radiometer group at NOAA moved to the Center for Environmental Technology (CET) of the Department of Electrical and Computer Engineering of the University of Colorado at Boulder. During this 2004 experiment, a total of 220 radiosondes were launched, and radiometric data from 22.235 to 380 GHz were obtained. Primary instruments included the ARM MWR and MWRP, a Global Positioning System (GPS), as well as the CET Ground-based Scanning Radiometer (GSR). We have analyzed data from these instruments to answer several questions of importance to ARM, including: (a) techniques for improved water vapor measurements; (b) improved calibration techniques during cloudy conditions; (c) the spectral response of radiometers to a variety of conditions: clear, liquid, ice, and mixed phase clouds; and (d) forward modeling of microwave and millimeter wave brightness temperatures from 22 to 380 GHz. Many of these results have been published in the open literature. During the third year of this contract, we participated in another ARM-sponsored experiment at the NSA during February-March 2007. This experiment is called the Radiative Heating in Underexplored Bands Campaign (RHUBC) and the GSR was operated successfully for the duration of the campaign. One of the principal goals of the experiment was to provide retrievals of water vapor during PWV amounts less than 2 mm and to compare GSR data with ARM radiometers and radiosondes. A secondary goal was to compare the radiometric response of the microwave and millimeter wavelength radiometers to water and ice clouds. In this final report, we will include the separate progress reports for each of the three years of the project and follow with a section on major accomplishments of the project.

  8. Epitaxial growth of intermetallic MnPt films on oxides and large exchange bias

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Zhiqi; Biegalski, Michael D.; Hsu, Shang-Lin; Shang, Shunli; Marker, Cassie; Liu, Jian; Li, Li; Fan, Lisha S.; Meyer, Tricia L.; Wong, Anthony T.; et al

    2015-11-05

    High-quality epitaxial growth of intermetallic MnPt films on oxides is achieved, with potential for multiferroic heterostructure applications. Antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly antiferromagnetic in bulk. Thus, highly ordered antiferromagnetic MnPt films exhibit superiorly large exchange coupling with a ferromagnetic layer.

  9. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  10. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  11. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  12. Temperature cycling vapor deposition HgI.sub.2 crystal growth

    DOE Patents [OSTI]

    Schieber, Michael M.; Beinglass, Israel; Dishon, Giora

    1977-01-01

    A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

  13. Metallic 1T phase source/drain electrodes for field effect transistors from

    Office of Scientific and Technical Information (OSTI)

    chemical vapor deposited MoS{sub 2} (Journal Article) | SciTech Connect Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS{sub 2} Citation Details In-Document Search Title: Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS{sub 2} Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good

  14. The Effects of Water Vapor and Hydrogen on the High-Temperature Oxidation of Alloys

    SciTech Connect (OSTI)

    Mu, N.; Jung, K.; Yanar, N. M.; Pettit, F. S; Holcomb, G. R.; Howard, B. H.; Meier, G. H.

    2013-06-01

    Essentially all alloys and coatings that are resistant to corrosion at high temperature require the formation of a protective (slowly-growing and adherent) oxide layer by a process known as selective oxidation. The fundamental understanding of this process has been developed over the years for exposure in pure oxygen or air. However, the atmospheres in most applications contain significant amounts of water vapor which can greatly modify the behavior of protective oxides. The development of oxy-fuel combustion systems in which fossil fuels are burned in a mixture of recirculated flue gas and oxygen, rather than in air, has caused renewed interest in the effects of water vapor and steam on alloy oxidation. The focus of this paper is on the ways the presence of water vapor can directly alter the selective oxidation process. The paper begins with a brief review of the fundamentals of selective oxidation followed by a description of recent experimental results regarding the effect of water vapor on the oxidation of a variety of chromia-forming alloys (Fe- and Ni-base) in the temperature range 600 to 700 °C. The atmospheres include air, air-H{sub 2}O, Ar-H{sub 2}O and Ar-H{sub 2}O-O{sub 2}. Then the behavior of alumina-forming alloys in H{sub 2}O-containing atmospheres is briefly described. As hydrogen is produced during oxidation of alloys in H{sub 2}O, it can be released back into the gas phase or injected into the metal (where it can diffuse through to the other side). Experiments in which hydrogen concentrations have been measured on both sides of thin specimens during oxidation by H{sub 2}O on only one side are described. Finally, it is attempted to catalogue the various experimental observations under a few general principles.

  15. Enhanced Attenuation Technologies: Passive Soil Vapor Extraction

    SciTech Connect (OSTI)

    Vangelas, K.; Looney, B.; Kamath, R.; Adamson, D.; Newell, C.

    2010-03-15

    Passive soil vapor extraction (PSVE) is an enhanced attenuation (EA) approach that removes volatile contaminants from soil. The extraction is driven by natural pressure gradients between the subsurface and atmosphere (Barometric Pumping), or by renewable sources of energy such as wind or solar power (Assisted PSVE). The technology is applicable for remediating sites with low levels of contamination and for transitioning sites from active source technologies such as active soil vapor extraction (ASVE) to natural attenuation. PSVE systems are simple to design and operate and are more cost effective than active systems in many scenarios. Thus, PSVE is often appropriate as an interim-remedial or polishing strategy. Over the past decade, PSVE has been demonstrated in the U.S. and in Europe. These demonstrations provide practical information to assist in selecting, designing and implementing the technology. These demonstrations indicate that the technology can be effective in achieving remedial objectives in a timely fashion. The keys to success include: (1) Application at sites where the residual source quantities, and associated fluxes to groundwater, are relatively low; (2) Selection of the appropriate passive energy source - barometric pumping in cases with a deep vadose zone and barrier (e.g., clay) layers that separate the subsurface from the atmosphere and renewable energy assisted PSVE in other settings and where higher flow rates are required. (3) Provision of sufficient access to the contaminated vadose zones through the spacing and number of extraction wells. This PSVE technology report provides a summary of the relevant technical background, real-world case study performance, key design and cost considerations, and a scenario-based cost evaluation. The key design and cost considerations are organized into a flowchart that dovetails with the Enhanced Attenuation: Chlorinated Organics Guidance of the Interstate Technology and Regulatory Council (ITRC). The PSVE flowchart provides a structured process to determine if the technology is, or is not, reasonable and defensible for a particular site. The central basis for that decision is the expected performance of PSVE under the site specific conditions. Will PSVE have sufficient mass removal rates to reduce the release, or flux, of contamination into the underlying groundwater so that the site can meet it overall remedial objectives? The summary technical information, case study experiences, and structured decision process provided in this 'user guide' should assist environmental decision-makers, regulators, and engineers in selecting and successfully implementing PSVE at appropriate sites.

  16. A Comparison of Water Vapor Quantities from Model Short-Range...

    Office of Scientific and Technical Information (OSTI)

    Water Vapor Quantities from Model Short-Range Forecasts and ARM Observations Citation Details In-Document Search Title: A Comparison of Water Vapor Quantities from Model ...

  17. Monitoring PVD metal vapors using laser absorption spectroscopy

    SciTech Connect (OSTI)

    Braun, D.G.; Anklam, T.M.; Berzins, L.V.; Hagans, K.G.

    1994-04-01

    Laser absorption spectroscopy (LAS) has been used by the Atomic Vapor Laser Isotope Separation (AVLIS) program for over 10 years to monitor the co-vaporization of uranium and iron in its separators. During that time, LAS has proven to be an accurate and reliable method to monitor both the density and composition of the vapor. It has distinct advantages over other rate monitors, in that it is completely non-obtrusive to the vaporization process and its accuracy is unaffected by the duration of the run. Additionally, the LAS diagnostic has been incorporated into a very successful process control system. LAS requires only a line of sight through the vacuum chamber, as all hardware is external to the vessel. The laser is swept in frequency through an absorption line of interest. In the process a baseline is established, and the line integrated density is determined from the absorption profile. The measurement requires no hardware calibration. Through a proper choice of the atomic transition, a wide range of elements and densities have been monitored (e.g. nickel, iron, cerium and gadolinium). A great deal of information about the vapor plume can be obtained from the measured absorption profiles. By monitoring different species at the same location, the composition of the vapor is measured in real time. By measuring the same density at different locations, the spatial profile of the vapor plume is determined. The shape of the absorption profile is used to obtain the flow speed of the vapor. Finally, all of the above information is used evaluate the total vaporization rate.

  18. Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn{sub 2}N{sub 0.86} films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2014-11-07

    Single-phase and oxygen doped Mn{sub 2}N{sub 0.86} thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The films grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature and ferromagnetic ordering agreed well with the Bloch-law T{sup 3/2} at room-temperature. We further demonstrate the enlarged Mn 3s splitting (6.46 eV) and its possible relation to the observed ferromagnetism. Our study not only provide a strategy for further theoretical work on oxygen doped manganese nitrides, but also shed promising light on utilizing its room-temperature FM property to fabricate spintronic devices.

  19. Properties of molecular beam epitaxy grown Eu{sub x}(transition metal){sub y} films (transition metals: Mn, Cr)

    SciTech Connect (OSTI)

    Balin, K.; Nowak, A.; Gibaud, A.; Szade, J.; Celinski, Z.

    2011-04-01

    The electronic and crystallographic structures, as well as the magnetic properties, of Eu{sub x}(transition metal){sub y} (transition metals: Mn, Cr) thin films grown by molecular beam epitaxy were studied. Relative changes of the Eu/Mn and Eu/Cr ratios derived from the XPS lines, as well as x-ray reflectivity, indicate mixing of the Eu/Mn and Eu/Cr layers. Valency transitions from Eu{sup 2+} to Eu{sup 3+} were observed in both systems for most studied stoichiometries. A transition to a magnetically ordered phase was observed at 15 K, 40 K, and 62 K for selected films in the Eu-Mn system, and at 50 K for the film with a Eu/Cr ratio of 0.5.

  20. Enhancement of pyroelectric signal by continuous ultraviolet illumination of epitaxial Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} films

    SciTech Connect (OSTI)

    Pintilie, L.; Iuga, A.; Botea, M.

    2014-09-29

    The pyroelectric signal generated by an epitaxial Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} film can be enhanced by continuous illumination with ultraviolet (UV) light. The measured signal increases more than 2 times at low modulation frequencies of the incident infrared (IR) radiation (∼10 Hz) and at wavelengths where the short-circuit photocurrent presents the maximum value (∼280–300 nm). The tentative explanation is that the changes in polarization induced by the temperature variation under modulated IR illumination are generating a variable internal electric field, able to collect the photogenerated carriers produced under continuous UV illumination leading to an additional signal in phase with the pyroelectric one. This finding could be exploited for designing pyroelectric detectors with enhanced characteristics by combining both UV and IR responses.

  1. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  2. Controlling the vapor pressure of a mercury lamp

    DOE Patents [OSTI]

    Grossman, Mark W.; George, William A.

    1988-01-01

    The invention described herein discloses a method and apparatus for controlling the Hg vapor pressure within a lamp. This is done by establishing and controlling two temperature zones within the lamp. One zone is colder than the other zone. The first zone is called the cold spot. By controlling the temperature of the cold spot, the Hg vapor pressure within the lamp is controlled. Likewise, by controlling the Hg vapor pressure of the lamp, the intensity and linewidth of the radiation emitted from the lamp is controlled.

  3. Controlling the vapor pressure of a mercury lamp

    DOE Patents [OSTI]

    Grossman, M.W.; George, W.A.

    1988-05-24

    The invention described herein discloses a method and apparatus for controlling the Hg vapor pressure within a lamp. This is done by establishing and controlling two temperature zones within the lamp. One zone is colder than the other zone. The first zone is called the cold spot. By controlling the temperature of the cold spot, the Hg vapor pressure within the lamp is controlled. Likewise, by controlling the Hg vapor pressure of the lamp, the intensity and linewidth of the radiation emitted from the lamp is controlled. 2 figs.

  4. Numerical simulation of water injection into vapor-dominated reservoirs

    SciTech Connect (OSTI)

    Pruess, K.

    1995-01-01

    Water injection into vapor-dominated reservoirs is a means of condensate disposal, as well as a reservoir management tool for enhancing energy recovery and reservoir life. We review different approaches to modeling the complex fluid and heat flow processes during injection into vapor-dominated systems. Vapor pressure lowering, grid orientation effects, and physical dispersion of injection plumes from reservoir heterogeneity are important considerations for a realistic modeling of injection effects. An example of detailed three-dimensional modeling of injection experiments at The Geysers is given.

  5. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  6. Catalytic Reactor For Oxidizing Mercury Vapor

    DOE Patents [OSTI]

    Helfritch, Dennis J.

    1998-07-28

    A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

  7. The Atomic Vapor Laser Isotope Separation Program

    SciTech Connect (OSTI)

    Not Available

    1992-11-09

    This report provides the finding and recommendations on the audit of the Atomic Vapor Laser Isotope Separation (AVLIS) program. The status of the program was assessed to determine whether the Department was achieving objectives stated in its January 1990 Plan for the Demonstration, Transition and Deployment of AVLIS Technology. Through Fiscal Year 1991, the Department had spent about $1.1 billion to develop AVLIS technology. The January 1990 plan provided for AVLIS to be far enough along by September to enable the Department to make a determination of the technical and economic feasibility of deployment. However, the milestones needed to support that determination were not met. An estimated $550 million would be needed to complete AVLIS engineering development and related testing prior to deployment. The earliest possible deployment date has slipped to beyond the year 2000. It is recommended that the Department reassess the requirement for AVLIS in light of program delays and changes that have taken place in the enrichment market since January 1990. Following the reassessment, a decision should be made to either fully support and promote the actions needed to complete AVLIS development or discontinue support for the program entirely. Management`s position is that the Department will successfully complete the AVLIS technology demonstration and that the program should continue until it can be transferred to a Government corporation. Although the auditors recognize that AVLIS may be transferred, there are enough technical and financial uncertainties that a thorough assessment is warranted.

  8. Optimization of Xenon Difluoride Vapor Delivery

    SciTech Connect (OSTI)

    Sweeney, Joseph; Marganski, Paul; Kaim, Robert; Wodjenski, Mike; Gregg, John; Yedave, Sharad; Sergi, Steve; Bishop, Steve; Eldridge, David; Zou Peng [ATMI, Inc., Danbury, Connecticut 06810 (United States)

    2008-11-03

    Xenon difluoride (XeF{sub 2}) has been shown to provide many process benefits when used as a daily maintenance recipe for ion implant. Regularly flowing XeF{sub 2} into the ion source cleans the deposits generated by ion source operation. As a result, significant increases in productivity have been demonstrated. However, XeF{sub 2} is a toxic oxidizer that must be handled appropriately. Furthermore, it is a low vapor pressure solid under standard conditions ({approx}4.5 torr at 25 deg. C). These aspects present unique challenges for designing a package for delivering the chemistry to an ion implanter. To address these challenges, ATMI designed a high-performance, re-usable cylinder for dispensing XeF{sub 2} in an efficient and reliable manner. Data are presented showing specific attributes of the cylinder, such as the importance of internal heat transfer media and the cylinder valve size. The impact of mass flow controller (MFC) selection and ion source tube design on the flow rate of XeF{sub 2} are also discussed. Finally, cylinder release rate data are provided.

  9. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect (OSTI)

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20?mm??20?mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50?nm to 200?nm.

  10. Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub...

    Office of Scientific and Technical Information (OSTI)

    Title: Epitaxial patterning of nanometer-thick Ysub 3Fesub 5Osub 12 films with low magnetic damping. Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely ...

  11. Systems and methods for generation of hydrogen peroxide vapor

    DOE Patents [OSTI]

    Love, Adam H; Eckels, Joel Del; Vu, Alexander K; Alcaraz, Armando; Reynolds, John G

    2014-12-02

    A system according to one embodiment includes a moisture trap for drying air; at least one of a first container and a second container; and a mechanism for at least one of: bubbling dried air from the moisture trap through a hydrogen peroxide solution in the first container for producing a hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above a hydrogen peroxide solution in the second container for producing a hydrogen peroxide vapor. A method according one embodiment includes at least one of bubbling dried air through a hydrogen peroxide solution in a container for producing a first hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above the hydrogen peroxide solution in a container for producing a second hydrogen peroxide vapor. Additional systems and methods are also presented.

  12. ARM - Field Campaign - Single Frequency GPS Water Vapor Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsSingle Frequency GPS Water Vapor Network ARM Data Discovery Browse Data Comments? We would love to hear from you Send us a note below or call us at 1-888-ARM-DATA....

  13. University of Oregon: GPS-based Precipitable Water Vapor (PWV)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Vignola, F.; Andreas, A.

    2013-08-22

    A partnership with the University of Oregon and U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to collect Precipitable Water Vapor (PWV) data to compliment existing resource assessment data collection by the university.

  14. Vaporization, dispersion, and radiant fluxes from LPG spills. Final report

    SciTech Connect (OSTI)

    Not Available

    1981-12-01

    Both burning and non-burning spills of LPG (primarily propane) were studied. Vaporization rates for propane spills on soil, concrete, insulating concrete, asphalt, sod, wood, and polymer foams were measured. Thermal conductivity, heat transfer coefficients, and steady state vaporization rates were determined. Vapor concentrations were measured downwind of open propane pools 25, 100, 400, and 1600 ft/sup 2/ in area. A Gaussian dispersion model modified for area sources provided a good correlation of measured concentrations. Emitted and incident radiant fluxes from propane fires were measured. Simplified flame radiation models were adequate for predicting radiant fluxes; the maximum effective flux emitted at the flame surface was about 50,000 Btu/h-ft/sup 2/. A few tests in which propane was sprayed into the air showed that at moderately high spray rates all the propane flashed to vapor or atomized; no liquid collected on the ground.

  15. ARM - Field Campaign - ARM-FIRE Water Vapor Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    were the airborne NASA LaRC LASE water vapor lidar and Diode Laser Hygrometer (DLH), the ground-based Vaisala RS-80H (after application of corrections for time-lag, temperature...

  16. University of Oregon: GPS-based Precipitable Water Vapor (PWV)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Vignola, F.; Andreas, A.

    A partnership with the University of Oregon and U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to collect Precipitable Water Vapor (PWV) data to compliment existing resource assessment data collection by the university.

  17. PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Deposition | Department of Energy Stable Perovskite Solar Cells via Chemical Vapor Deposition PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor Deposition Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO SunShot Award Amount: $125,000 This project is focused on novel approaches to remove risk related to the development of hybrid perovskite solar cells (HPSCs). Researchers will synthesize a new and

  18. Injection locked oscillator system for pulsed metal vapor lasers

    DOE Patents [OSTI]

    Warner, Bruce E.; Ault, Earl R.

    1988-01-01

    An injection locked oscillator system for pulsed metal vapor lasers is disclosed. The invention includes the combination of a seeding oscillator with an injection locked oscillator (ILO) for improving the quality, particularly the intensity, of an output laser beam pulse. The present invention includes means for matching the first seeder laser pulses from the seeding oscillator to second laser pulses of a metal vapor laser to improve the quality, and particularly the intensity, of the output laser beam pulse.

  19. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    SciTech Connect (OSTI)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A.; Grazianetti, C.; Fanciulli, M.; Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano Bicocca, I-20126, Milano ; Chiappe, D.; Molle, A.

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  20. Quantitative IR Spectrum and Vibrational Assignments for Glycolaldehyde Vapor: Glycolaldehyde Measurements in Biomass Burning Plumes

    SciTech Connect (OSTI)

    Johnson, Timothy J.; Sams, Robert L.; Profeta, Luisa T.; Akagi, Sheryl; Burling, Ian R.; Yokelson, Robert J.; Williams, Stephen D.

    2013-04-15

    Glycolaldehyde (GA, 2-hydroxyethanal, C2H4O2) is a semi-volatile molecule of atmospheric importance, recently proposed as a precursor in the formation of aqueous-phase secondary organic aerosol (SOA). There are few methods to measure glycolaldehyde vapor, but infrared spectroscopy has been used successfully. Using vetted protocols we have completed the first assignment of all fundamental vibrational modes and derived quantitative IR absorption band strengths using both neat and pressure-broadened GA vapor. Even though GA is problematic due to its propensity to both dimerize and condense, our intensities agree well with the few previously published values. Using the reference ?10 band Q-branch at 860.51 cm-1, we have also determined GA mixing ratios in biomass burning plumes generated by field and laboratory burns of fuels from the southeastern and southwestern United States, including the first field measurements of glycolaldehyde in smoke. The GA emission factors were anti-correlated with modified combustion efficiency confirming release of GA from smoldering combustion. The GA emission factors (g of GA emitted per kg dry biomass burned on a dry mass basis) had a low dependence on fuel type consistent with the production mechanism being pyrolysis of cellulose. GA was emitted at 0.23 0.13% of CO from field fires and we calculate that it accounts for ~18% of the aqueous-phase SOA precursors that we were able to measure.

  1. Isobaric molecular dynamics version of the generalized replica exchange method (gREM): Liquid–vapor equilibrium

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Malolepsza, Edyta; Secor, Maxim; Keyes, Tom

    2015-09-23

    A prescription for sampling isobaric generalized ensembles with molecular dynamics is presented and applied to the generalized replica exchange method (gREM), which was designed for simulating first-order phase transitions. The properties of the isobaric gREM ensemble are discussed and a study is presented of the liquid-vapor equilibrium of the guest molecules given for gas hydrate formation with the mW water model. As a result, phase diagrams, critical parameters, and a law of corresponding states are obtained.

  2. Structural and chemical ordering of Heusler CoxMnyGez epitaxial films on Ge (111). Quantitative study using traditional and anomalous x-ray diffraction techniques

    SciTech Connect (OSTI)

    Collins, B. A.; Chu, Y.; He, L.; Haskel, D.; Tsui, F.

    2015-12-14

    We found that epitaxial films of CoxMnyGez grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy Co2MnGe has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections across each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. Furthermore, the quantitative MEAD analysis reveals no detectable amount (<0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry (Co 0.5 Mn 0.25 Ge 0.25 ) is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.

  3. Dispersion of seed vapor and gas ionization in an MHD second stage combustor and channel

    SciTech Connect (OSTI)

    Chang, S.L.; Lottes, S.A.; Bouillard, J.X.

    1992-01-01

    An approach is introduced for the simulation of a magnetohydrodynamic system consisting of a second stage combustor, a convergent nozzle, and a channel. The simulation uses an Argonne integral combustion flow computer code and another Argonne channel computer code to predict flow, thermal and electric properties in the seed particle laden reacting flow in the system. The combustion code is a general hydrodynamics computer code for two-phase, two-dimensional, turbulent, and reacting flows, based on mass, momentum, and energy conservation laws for gaseous and condensed phases. The channel code is a multigrid three-dimensional computer code for compressible flow subject to magnetic and electric interactions. Results of this study suggests that (1) the processes of seed particle evaporation, seed vapor dispersion, and gas ionization in the reacting flow are critical to the evaluation of the downstream channel performance and (2) particle size, loading, and inlet profile have strong effects on wall deposition and plasma temperature development.

  4. Dispersion of seed vapor and gas ionization in an MHD second stage combustor and channel

    SciTech Connect (OSTI)

    Chang, S.L.; Lottes, S.A.; Bouillard, J.X.

    1992-07-01

    An approach is introduced for the simulation of a magnetohydrodynamic system consisting of a second stage combustor, a convergent nozzle, and a channel. The simulation uses an Argonne integral combustion flow computer code and another Argonne channel computer code to predict flow, thermal and electric properties in the seed particle laden reacting flow in the system. The combustion code is a general hydrodynamics computer code for two-phase, two-dimensional, turbulent, and reacting flows, based on mass, momentum, and energy conservation laws for gaseous and condensed phases. The channel code is a multigrid three-dimensional computer code for compressible flow subject to magnetic and electric interactions. Results of this study suggests that (1) the processes of seed particle evaporation, seed vapor dispersion, and gas ionization in the reacting flow are critical to the evaluation of the downstream channel performance and (2) particle size, loading, and inlet profile have strong effects on wall deposition and plasma temperature development.

  5. PHASE DETECTOR

    DOE Patents [OSTI]

    Kippenhan, D.O.

    1959-09-01

    A phase detector circuit is described for use at very high frequencies of the order of 50 megacycles. The detector circuit includes a pair of rectifiers inverted relative to each other. One voltage to be compared is applied to the two rectifiers in phase opposition and the other voltage to be compared is commonly applied to the two rectifiers. The two result:ng d-c voltages derived from the rectifiers are combined in phase opposition to produce a single d-c voltage having amplitude and polarity characteristics dependent upon the phase relation between the signals to be compared. Principal novelty resides in the employment of a half-wave transmission line to derive the phase opposing signals from the first voltage to be compared for application to the two rectifiers in place of the transformer commonly utilized for such purpose in phase detector circuits for operation at lower frequency.

  6. ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Maria Cadeddu

    2004-02-19

    Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

  7. ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Maria Cadeddu

    Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

  8. Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steinrück, H. -G.; Magerl, A.; Deutsch, M.; Ocko, B. M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less

  9. Electronic and magnetic properties of epitaxial perovskite SrCrO3(001)

    SciTech Connect (OSTI)

    Zhang, Hongliang; Du, Yingge; Sushko, Petr; Bowden, Mark E.; Shutthanandan, V.; Qiao, Liang; Cao, Guixin; Gai, Zheng; Sallis, Shawn; Piper, L.F.J.; Chambers, Scott A.

    2015-06-24

    We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra indicate a strongly hybridized Cr3d-O2p state crossing the Fermi level, leading to metallic behavior. Comparison between valence band spectra near the Fermi level and the densities of states calculated using density functional theory (DFT) also suggests the presence of coherent and incoherent states and points to a strong electron-electron correlation effects. The magnetic susceptibility can be described by Pauli paramagnetism at temperatures above 100 K, but reveals antiferromagnetic behavior at lower temperatures resulting from orbital ordering as suggested by Ortega-San-Martin et al. [Phys. Rev. Lett. 99, 255701 (2007)].

  10. Thermal generation of spin current in epitaxial CoFe2O4 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Er -Jia; Herklotz, Andreas; Kehlberger, Andreas; Cramer, Joel; Jakob, Gerhard; Klaeui, Mathias

    2016-01-12

    The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of –100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Moreover, we demonstrate that the spin Seebeckmore » effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

  11. Pseudo-rotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steinruck, H. -G.; Ocko, B. M.; Magerl, A.; Deutsch, M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by -resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% 3% to the sapphires and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themorecrystalline coherence length of the SAMs powderlike crystallites when rotationally aligned with the sapphires lattice. The increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.less

  12. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    DOE Patents [OSTI]

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  13. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

    SciTech Connect (OSTI)

    Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; Shih, Chih-Kang

    2014-08-01

    Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film. We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.

  14. Extrinsic anomalous Hall effect in epitaxial Mn{sub 4}N films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2015-01-19

    Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σ{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρ{sub AH}=a′ρ{sub xx0}+bρ{sub xx}{sup 2} and σ{sub AH}∝σ{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.

  15. Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; Shih, Chih-Kang

    2014-08-01

    Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film.more » We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.« less

  16. Thin film GaAs solar cells on glass substrates by epitaxial liftoff

    SciTech Connect (OSTI)

    Lee, X.Y.; Goertemiller, M.; Boroditsky, M.; Ragan, R.; Yablonovitch, E.

    1997-02-01

    In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

  17. Suitability of epitaxial GaAs for x-ray imaging

    SciTech Connect (OSTI)

    Sun, G.C.; Talbi, N.; Verdeil, C.; Bourgoin, J.C.

    2004-09-20

    Because the rate of indirect photon-electron conversion for scintillator materials coupled with arrays of photodiodes is at least 25 times smaller than the rate of direct conversion, we examine the conditions to be fulfilled by semiconductors undergoing such direct conversion to be applied to x-ray imaging. Bulk grown materials are not well suited to this application, because large defect concentrations give rise to strongly nonuniform electronic properties. We argue that only epitaxial layers are suitable for use as imaging devices and we illustrate our argument using the case of thick epitaxial GaAs layers. Detectors made with such layers exhibit a good energy resolution, a charge collection efficiency which approaches 1, linearity over more than three orders of amplitude, no afterglow (a response time shorter than 20 {mu}s), and no charge-induced polarization effects.

  18. Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

    SciTech Connect (OSTI)

    Steinrück, H. -G.; Magerl, A.; Deutsch, M.; Ocko, B. M.

    2014-10-06

    The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in the crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.

  19. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  20. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  1. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect (OSTI)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  2. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOE Patents [OSTI]

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  3. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

    DOE Patents [OSTI]

    Li, Qiming; Wang, George T

    2015-01-13

    A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

  4. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Magnetoelectric Effect | Energy Frontier Research Centers Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of multiferroic materials have drawn increasing interest due to the enhanced magnetoelectric coupling and potential for next-generation multifunctional devices. Most of these structures are typically prepared by thin film evaporation approaches. Herein, however,

  5. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect (OSTI)

    Guo, Y.; Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L. [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, R. [Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 23 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  6. Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

    SciTech Connect (OSTI)

    Jana, Dipankar Porwal, S.; Sharma, T. K. Oak, S. M.; Kumar, Shailendra

    2014-04-15

    Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

  7. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    1996-01-01

    A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

  8. Strain-induced orbital polarization and multiple phase transitions in Ba{sub 2}MnWO{sub 6} from first principles

    SciTech Connect (OSTI)

    Ju, Weiwei; Zhao, Bao; Yang, Zhongqin

    2013-11-28

    Electronic structures of double perovskite Ba{sub 2}MnWO{sub 6} with epitaxial strain are explored by using methods based on density functional theory. An in-plane compressive strain is found not only resulting in a semiconductor-metal transition (SMT), but also altering the magnetic structures, from different kinds of antiferromagnetic to ferromagnetic orders. Orbital polarization and different orbital occupancies of Mn d{sub z{sup 2}} and d{sub x{sup 2}?y{sup 2}} states, induced by the epitaxial strain, are employed to understand the SMT. The rich magnetic phase transitions are rationalized by a magnetic stabilization mechanism. Our results show that many technological applications may be carried out in the material with the control of epitaxial strain.

  9. Experimental study of the distribution of alloying elements after the formation of epitaxial ferrite upon cooling in a low-carbon steel

    SciTech Connect (OSTI)

    Santofimia, M.J.; Kwakernaak, C.; Sloof, W.G.; Zhao, L.; Sietsma, J.

    2010-10-15

    The distributions of carbon and substitutional elements in a low-carbon steel during the formation of epitaxial ferrite on cooling after intercritical annealing have been studied by electron probe microanalysis (EPMA). The analysis has shown that the formation of epitaxial ferrite takes place with a partial redistribution of alloying elements between the epitaxial ferrite and the austenite. This redistribution of alloying elements causes compositional gradients in the epitaxial ferrite that lead to a different etching behaviour with respect to the intercritical ferrite. Contrary to Thermo-Calc predictions, a distinct partitioning behaviour of silicon has been observed.

  10. Direct Real-Time Detection of Vapors from Explosive Compounds

    SciTech Connect (OSTI)

    Ewing, Robert G.; Clowers, Brian H.; Atkinson, David A.

    2013-10-03

    The real-time detection of vapors from low volatility explosives including PETN, tetryl, RDX and nitroglycerine along with various compositions containing these substances is demonstrated. This was accomplished with an atmospheric flow tube (AFT) using a non-radioactive ionization source and coupled to a mass spectrometer. Direct vapor detection was demonstrated in less than 5 seconds at ambient temperature without sample pre-concentration. The several seconds of residence time of analytes in the AFT provides a significant opportunity for reactant ions to interact with analyte vapors to achieve ionization. This extended reaction time, combined with the selective ionization using the nitrate reactant ions (NO3- and NO3-HNO3), enables highly sensitive explosives detection. Observed signals from diluted explosive vapors indicate detection limits below 10 ppqv using selected ion monitoring (SIM) of the explosive-nitrate adduct at m/z 349, 378, 284 and 289 for tetryl, PETN, RDX and NG respectively. Also provided is a demonstration of the vapor detection from 10 different energetic formulations, including double base propellants, plastic explosives and commercial blasting explosives using SIM for the NG, PETN and RDX product ions.

  11. Laser absorption spectroscopy system for vaporization process characterization and control

    SciTech Connect (OSTI)

    Galkowski, J.; Hagans, K.

    1993-09-07

    In support of the Lawrence Livermore National Laboratory`s (LLNL`s) Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) Program, a laser atomic absorption spectroscopy (LAS) system has been developed. This multi-laser system is capable of simultaneously measuring the line densities of {sup 238}U ground and metastable states, {sup 235}U ground and metastable states, iron, and ions at up to nine locations within the separator vessel. Supporting enrichment experiments that last over one hundred hours, this laser spectroscopy system is employed to diagnose and optimize separator system performance, control the electron beam vaporizer and metal feed systems, and provide physics data for the validation of computer models. As a tool for spectroscopic research, vapor plume characterization, vapor deposition monitoring, and vaporizer development, LLNL`s LAS laboratory with its six argon-ion-pumped ring dye lasers and recently added Ti:Sapphire and external-cavity diode-lasers has capabilities far beyond the requirements of its primary mission.

  12. Vapor etching of nuclear tracks in dielectric materials

    DOE Patents [OSTI]

    Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

    2000-01-01

    A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

  13. Drying of pulverized material with heated condensible vapor

    DOE Patents [OSTI]

    Carlson, L.W.

    1984-08-16

    Apparatus for drying pulverized material utilizes a high enthalpy condensable vapor such as steam for removing moisture from the individual particles of the pulverized material. The initially wet particulate material is tangentially delivered by a carrier vapor flow to an upper portion of a generally vertical cylindrical separation drum. The lateral wall of the separation drum is provided with a plurality of flow guides for directing the vapor tangentially therein in the direction of particulate material flow. Positioned concentrically within the separation drum and along the longitudinal axis thereof is a water-cooled condensation cylinder which is provided with a plurality of collection plates, or fines, on the outer lateral surface thereof. The cooled collection fines are aligned counter to the flow of the pulverized material and high enthalpy vapor mixture to maximize water vapor condensation thereon. The condensed liquid which includes moisture removed from the pulverized materials then flows downward along the outer surface of the coolant cylinder and is collected and removed. The particles travel in a shallow helix due to respective centrifugal and vertical acceleration forces applied thereto. The individual particles of the pulverized material are directed outwardly by the vortex flow where they contact the inner cylindrical surface of the separation drum and are then deposited at the bottom thereof for easy collection and removal. The pulverized material drying apparatus is particularly adapted for drying coal fines and facilitates the recovery of the pulverized coal. 2 figs.

  14. Drying of pulverized material with heated condensible vapor

    DOE Patents [OSTI]

    Carlson, Larry W.

    1986-01-01

    Apparatus for drying pulverized material utilizes a high enthalpy condensable vapor such as steam for removing moisture from the individual particles of the pulverized material. The initially wet particulate material is tangentially delivered by a carrier vapor flow to an upper portion of a generally vertical cylindrical separation drum. The lateral wall of the separation drum is provided with a plurality of flow guides for directing the vapor tangentially therein in the direction of particulate material flow. Positioned concentrically within the separation drum and along the longitudinal axis thereof is a water-cooled condensation cylinder which is provided with a plurality of collection plates, or fins, on the outer lateral surface thereof. The cooled collection fins are aligned counter to the flow of the pulverized material and high enthalpy vapor mixture to maximize water vapor condensation thereon. The condensed liquid which includes moisture removed from the pulverized material then flows downward along the outer surface of the coolant cylinder and is collected and removed. The particles travel in a shallow helix due to respective centrifugal and vertical acceleration forces applied thereto. The individual particles of the pulverized material are directed outwardly by the vortex flow where they contact the inner cylindrical surface of the separation drum and are then deposited at the bottom thereof for easy collection and removal. The pulverized material drying apparatus is particularly adapted for drying coal fines and facilitates the recovery of the pulverized coal.

  15. Removal of Sarin Aerosol and Vapor by Water Sprays

    SciTech Connect (OSTI)

    Brockmann, John E.

    1998-09-01

    Falling water drops can collect particles and soluble or reactive vapor from the gas through which they fall. Rain is known to remove particles and vapors by the process of rainout. Water sprays can be used to remove radioactive aerosol from the atmosphere of a nuclear reactor containment building. There is a potential for water sprays to be used as a mitigation technique to remove chemical or bio- logical agents from the air. This paper is a quick-look at water spray removal. It is not definitive but rather provides a reasonable basic model for particle and gas removal and presents an example calcu- lation of sarin removal from a BART station. This work ~ a starting point and the results indicate that further modeling and exploration of additional mechanisms for particle and vapor removal may prove beneficial.

  16. VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.

    SciTech Connect (OSTI)

    GREENE,G.A.; FINFROCK,C.C.

    2000-10-01

    The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm{sup 2} s) vs. inverse temperature (K{sup {minus}1}). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed.

  17. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOE Patents [OSTI]

    Liu, David K.

    1992-01-01

    Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

  18. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOE Patents [OSTI]

    Liu, D.K.

    1992-12-15

    Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

  19. Metamorphosis: Phases of UF{sub 6}

    SciTech Connect (OSTI)

    Dyer, R.H.

    1991-12-31

    A 15-minute videotape is presented. The subject matter is 150 grams of UF{sub 6} sealed in a glass tube. Close-up views show the UF{sub 6} as phase changes are effected by the addition or removal of heat from the closed system. The solid-to-liquid transition is shown as heat is added, both slowly and rapidly. The solid phases which result from freezing and from desublimation are contrasted. In the solid state, uranium hexafluoride is a nearly-white, dense crystalline solid. The appearance of this solid depends on whether it is formed by freezing from the liquid or by desublimation from the vapor phase. If frozen from the liquid, the solid particles take the form of irregularly shaped coarse grains, while the solid product of desublimation tends to be a rather formless mass without individually distinguishable particles. The changes in state are presented in terms of the UF{sub 6} phase diagram.

  20. Effect of furnace operating conditions on alkali vaporization, batch

    Office of Scientific and Technical Information (OSTI)

    carryover, and the formation of SO2 and NO in an oxy-fuel fired container glass furnace. (Journal Article) | SciTech Connect furnace operating conditions on alkali vaporization, batch carryover, and the formation of SO2 and NO in an oxy-fuel fired container glass furnace. Citation Details In-Document Search Title: Effect of furnace operating conditions on alkali vaporization, batch carryover, and the formation of SO2 and NO in an oxy-fuel fired container glass furnace. No abstract prepared.

  1. Epitaxial Ni{sub 3}FeN thin films: A candidate for spintronic devices and magnetic sensors

    SciTech Connect (OSTI)

    Loloee, Reza

    2012-07-15

    A new type of epitaxial ferromagnetic nitride (Ni{sub 3} Fe N = permalloy nitride = 'PyN') compound films were grown on Al{sub 2}O{sub 3}(1120) substrates using reactive triode magnetron sputtering. The results of electron back-scattering diffraction and x-ray diffraction techniques indicate a high quality epitaxial crystalline structure with growth normal of (100). Magnetization measurements of epitaxial PyN films revealed several unique results. (1) A textbook square hysteresis loop that suggest existence of single magnetic domain in these films. (2) A coercive field is tunable from a few mOe up to a few Oe by changing the film thickness. (3) A magnetization that switches (rotate) over a very small field range of {delta}H{sub C} {<=} 0.05 Oe, independent of the film thickness. This small {delta}H indicates a very large resistive sensitivity ({delta}R/{delta}H) of the epitaxial PyN. (4) The epitaxial PyN thermal cycling through several cycles between '2 and 800 K' (-271 Degree-Sign C to +527 Degree-Sign C) shows much less degradation only about 2-5% compared to 40% degradation of a simple Py film. Four-probe transport measurements give an anisotropic magnetoresistance of Almost-Equal-To 6%, sufficiently higher than other known ferromagnetic materials. These interesting properties are ideal for a variety of spintronic devices and magnetic sensors.

  2. Structural properties of pure and Fe-doped Yb films prepared by vapor condensation

    SciTech Connect (OSTI)

    Rojas-Ayala, C.; Passamani, E.C.; Suguihiro, N.M.; Litterst, F.J.; Baggio Saitovitch, E.

    2014-10-15

    Ytterbium and iron-doped ytterbium films were prepared by vapor quenching on Kapton substrates at room temperature. Structural characterization was performed by X-ray diffraction and transmission electron microscopy. The aim was to study the microstructure of pure and iron-doped films and thereby to understand the effects induced by iron incorporation. A coexistence of face centered cubic and hexagonal close packed-like structures was observed, the cubic-type structure being the dominant contribution. There is an apparent thickness dependence of the cubic/hexagonal relative ratios in the case of pure ytterbium. Iron-clusters induce a crystalline texture effect, but do not influence the cubic/hexagonal volume fraction. A schematic model is proposed for the microstructure of un-doped and iron-doped films including the cubic- and hexagonal-like structures, as well as the iron distribution in the ytterbium matrix. - Highlights: • Pure and Fe-doped Yb films have been prepared by vapor condensation. • Coexistence of fcc- and hcp-type structures was observed. • No oxide phases have been detected. • Fe-clustering does not affect the fcc/hcp ratio, but favors a crystalline texture. • A schematic model is proposed to describe microscopically the microstructure.

  3. Performance of a Cross-Flow Humidifier with a High Flux Water Vapor Transport Membrane

    SciTech Connect (OSTI)

    Ahluwalia, R. K.; Wang, X.; Johnson, W. B.; Berg, F.; Kadylak, D.

    2015-09-30

    Water vapor transport (WVT) flux across a composite membrane that consists of a very thin perfluorosulfonic acid (PFSA) ionomer layer sandwiched between two expanded polytetrafluoroethylene (PTFE) microporous layers is investigated. Static and dynamic tests are conducted to measure WVT flux for different composite structures; a transport model shows that the underlying individual resistances for water diffusion in the gas phase and microporous and ionomer layers and for interfacial kinetics of water uptake at the ionomer surface are equally important under different conditions. A finite-difference model is formulated to determine water transport in a full-scale (2-m2 active membrane area) planar cross-flow humidifier module assembled using pleats of the optimized composite membrane. In agreement with the experimental data, the modeled WVT flux in the module increases at higher inlet relative humidity (RH) of the wet stream and at lower pressures, but the mass transfer effectiveness is higher at higher pressures. The model indicates that the WVT flux is highest under conditions that maintain the wet stream at close to 100% RH while preventing the dry stream from becoming saturated. The overall water transport is determined by the gradient in RH of the wet and dry streams but is also affected by vapor diffusion in the gas layer and the microporous layer.

  4. The effects of heat conduction on the vaporization of liquid invading superheated permeable rock

    SciTech Connect (OSTI)

    Woods, Andrew, W.; Fitzgerald, Shaun D.

    1996-01-24

    We examine the role of conductive and convective heat transfer in the vaporization of liquid as it slowly invades a superheated permeable rock. For very slow migration, virtually all of the liquid vaporizes. As the liquid supply rate increases beyond the rate of heat transfer by thermal conduction, a decreasing fraction of the liquid can vaporize. Indeed, for sufficiently high flow rates, the fraction vaporizing depends solely on the superheat of the rock, and any heat transfer from the superheated region is negligible. These results complement earlier studies of vaporization under very high injection rates, in which case the dynamic vapour pressure reduces the mass fraction vaporizing to very small values.

  5. Long Range Ferromagnetic Order in LaCoO3-δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mehta, Virat; Biskup, Nevenko; Arenholz, E; Varela del Arco, Maria; Suzuki, Yuri

    2015-04-23

    We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering can stabilize a long-range ferromagnetic ground state in epitaxial LaCoO3 thin films. Highest saturation magnetization values are found in the thin films in tension on SrTiO3 and (La,Sr)(Al,Ta)O3 substrates and the lowest values are found in thin films in compression on LaAlO3. Electron microscopy reveals oxygen vacancy ordering to varying degrees in all samples, although samples with the highest magnetization are the most defective. Element-specific x-ray absorption techniques reveal the presence of high spin Co2+ and Co3+ as well as low spin Co3+ in different proportions dependingmore » on the strain state. The interactions among the high spin Co ions and the oxygen vacancy superstructure are correlated with the stabilization of the long-range ferromagnetic order.« less

  6. The Atomic Vapor Laser Isotope Separation Program. [Atomic Vapor Laser Isotope Separation (AVLIS) Program

    SciTech Connect (OSTI)

    Not Available

    1992-11-09

    This report provides the finding and recommendations on the audit of the Atomic Vapor Laser Isotope Separation (AVLIS) program. The status of the program was assessed to determine whether the Department was achieving objectives stated in its January 1990 Plan for the Demonstration, Transition and Deployment of AVLIS Technology. Through Fiscal Year 1991, the Department had spent about $1.1 billion to develop AVLIS technology. The January 1990 plan provided for AVLIS to be far enough along by September to enable the Department to make a determination of the technical and economic feasibility of deployment. However, the milestones needed to support that determination were not met. An estimated $550 million would be needed to complete AVLIS engineering development and related testing prior to deployment. The earliest possible deployment date has slipped to beyond the year 2000. It is recommended that the Department reassess the requirement for AVLIS in light of program delays and changes that have taken place in the enrichment market since January 1990. Following the reassessment, a decision should be made to either fully support and promote the actions needed to complete AVLIS development or discontinue support for the program entirely. Management's position is that the Department will successfully complete the AVLIS technology demonstration and that the program should continue until it can be transferred to a Government corporation. Although the auditors recognize that AVLIS may be transferred, there are enough technical and financial uncertainties that a thorough assessment is warranted.

  7. A review of porous media enhanced vapor-phase diffusion mechanisms...

    Office of Scientific and Technical Information (OSTI)

    Information is obtained from literature spanning two different disciplines (soil science and engineering) to gain a diverse perspective on this topic. Findings indicate that while ...

  8. A NOVEL VAPOR-PHASE PROCESS FOR DEEP DESULFURIZATION OF NAPHTHA/DIESEL

    SciTech Connect (OSTI)

    B.S. Turk; R.P. Gupta; S.K. Gangwal

    2003-06-30

    Tier 2 regulations issued by the U.S. Environmental Protection Agency (EPA) require a substantial reduction in the sulfur content of gasoline. Similar regulations have been enacted for the sulfur level in on-road diesel and recently off-road diesel. The removal of this sulfur with existing and installed technology faces technical and economic challenges. These challenges created the opportunity for new emerging technologies. Research Triangle Institute (RTI) with subcontract support from Kellogg Brown & Root, Inc., (KBR) used this opportunity to develop RTI's transport reactor naphtha desulfurization (TReND) process. Starting with a simple conceptual process design and some laboratory results that showed promise, RTI initiated an accelerated research program for sorbent development, process development, and marketing and commercialization. Sorbent development has resulted in the identification of an active and attrition resistant sorbent that has been prepared in commercial equipment in 100 lb batches. Process development has demonstrated both the sulfur removal performance and regeneration potential of this sorbent. Process development has scaled up testing from small laboratory to pilot plant transport reactor testing. Testing in the transport reactor pilot plant has demonstrated the attrition resistance, selective sulfur removal activity, and regeneration activity of this sorbent material. Marketing and commercialization activities have shown with the existing information that the process has significant capital and operating cost benefits over existing and other emerging technologies. The market assessment and analysis provided valuable feedback about the testing and performance requirements for the technical development program. This market analysis also provided a list of potential candidates for hosting a demonstration unit. Although the narrow window of opportunity generated by the new sulfur regulations and the conservative nature of the refining industry slowed progress of the demonstration unit, negotiations with potential partners are proceeding for commercialization of this process.

  9. Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

    SciTech Connect (OSTI)

    Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong

    2015-01-05

    We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

  10. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  11. Industrial applications of high-power copper vapor lasers

    SciTech Connect (OSTI)

    Warner, B.E.; Boley, C.D.; Chang, J.J.; Dragon, E.P.; Havstad, M.A.; Martinez, M.; McLean, W. II

    1995-08-01

    A growing appreciation has developed in the last several years for the copper vapor laser because of its utility in ablating difficult materials at high rates. Laser ablation at high rates shows promise for numerous industrial applications such as thin film deposition, precision hole drilling, and machining of ceramics and other refractories.

  12. COMPOSITION OF VAPORS FROM BOILING NITRIC ACID SOLUTIONS B A

    Office of Scientific and Technical Information (OSTI)

    COMPOSITION OF VAPORS FROM BOILING NITRIC ACID SOLUTIONS B A T T E L L E M E M O R I A L I N S T I T U T E DISCLAIMER This report was prepared as an account of work sponsored by an ...

  13. Method for removing metal vapor from gas streams

    DOE Patents [OSTI]

    Ahluwalia, R.K.; Im, K.H.

    1996-04-02

    A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines. 13 figs.

  14. Method for removing metal vapor from gas streams

    DOE Patents [OSTI]

    Ahluwalia, R. K.; Im, K. H.

    1996-01-01

    A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines.

  15. Validation of TES Temperature and Water Vapor Retrievals with ARM

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Observations Validation of TES Temperature and Water Vapor Retrievals with ARM Observations Cady-Pereira, Karen Atmospheric and Environmental Research, Inc. Shephard, Mark Atmospheric and Environmental Research, Inc. Clough, Shepard Atmospheric and Environmental Research Mlawer, Eli Atmospheric & Environmental Research, Inc. Turner, David University of Wisconsin-Madison Category: Atmospheric State and Surface The primary objective of the TES (Tropospheric Emission Spectrometer)

  16. Final Report- Vapor Transport Deposition for III-V Thin Film Photovoltaics

    Broader source: Energy.gov [DOE]

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers.

  17. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  18. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    SciTech Connect (OSTI)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D. E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F. E-mail: dayen@ipcms.unistra.fr; Venkata Kamalakar, M.

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  19. Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

    SciTech Connect (OSTI)

    Islam, Md. Sherajul Makino, T.; Hashimoto, A.; Bhuiyan, A. G.; Tanaka, S.

    2014-12-15

    This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

  20. Interface Coupling Transition in a Thin EpitaxialAntiferromagnetic Film Interacting with a Ferromagnetic Substrate

    SciTech Connect (OSTI)

    Finazzi, M.; Brambilla, A.; Biagioni, P.; Graf, J.; Gweon, G.-H.; Scholl, A.; Lanzara, A.; Duo, L.

    2006-09-07

    We report experimental evidence for a transition in theinterface coupling between an antiferromagnetic film and a ferromagneticsubstrate. The transition is observed in a thin epitaxial NiO film grownon top of Fe(001) as the film thickness is increased. Photoemissionelectron microscopy excited with linearly polarized x rays shows that theNiO film is antiferromagnetic at room temperature with in-plane uniaxialmagnetic anisotropy. The anisotropy axis is perpendicular to the Fesubstrate magnetization when the NiO thickness is less than about 15A,but rapidly becomes parallel to the Fe magnetization for a NiO coveragehigher than 25 A.

  1. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, W. H.; Han, W.; Pi, K.; McCreary, K. M.; Miao, F.; Bao, W.; Lau, C. N.; Kawakami, R. K.

    2008-11-03

    We investigate the growth of MgO films on graphene by molecular beam epitaxy and find that surface diffusion promotes a rough morphology. To reduce the mobility of surface atoms, the graphene surface is dressed by Ti atoms prior to MgO deposition. With as little as 0.5 ML (monolayer) of Ti, the MgO overlayer becomes atomically smooth. Furthermore, no aggregation of MgO is observed at the edges of the graphene sheet. These results are important for the fabrication of nanoscale electronic and spintronic devices.

  2. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOE Patents [OSTI]

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  3. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOE Patents [OSTI]

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  4. Kinetics of Oxygen Surface Exchange on Epitaxial Ruddlesden Popper Phases and Correlations to First-Principles Descriptors

    SciTech Connect (OSTI)

    Lee, Yueh-Lin; Wang, Xiao Renshaw; Lee, Ho Nyung; Morgan, Dane; Yang, Shao-horn

    2016-01-01

    Through alignment of theoretical modeling with experimental measurements of oxygen surface-exchange kinetics on (001)-oriented La2 xSrxMO4+ (M = Co, Ni, Cu) thin films, we demonstrate here the capability of the theoretical bulk O 2p-band centers to correlate with oxygen surface-exchange kinetics of the Ruddlesden Popper oxide (RP214) (001)-oriented thin films. In addition, we demonstrate that the bulk O 2p-band centers can also correlate with the experimental activation energies for bulk oxygen transport and oxygen surface exchange of both the RP214 and the perovskite polycrystalline materials reported in the literature, indicating the effectiveness of the bulk O 2p-band centers in describing the associated energetics and kinetics. We propose that the opposite slopes of the bulk O 2p-band center correlations between the RP214 and the perovskite materials are due to the intrinsic mechanistic differences of their oxygen surface-exchange kinetics bulk anionic transport.

  5. Kinetics of oxygen surface exchange on epitaxial Ruddlesden–Popper phases and correlations to first-principles descriptors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Yueh -Lin; Wang, Xiao Renshaw; Lee, Ho Nyung; Morgan, Dane; Shao-Horn, Yang; Lee, Dongkyu

    2015-12-17

    Through alignment of theoretical modeling with experimental measurements of oxygen surface-exchange kinetics on (001)-oriented La2–xSrxMO4+δ (M = Co, Ni, Cu) thin films, we demonstrate here the capability of the theoretical bulk O 2p-band centers to correlate with oxygen surface-exchange kinetics of the Ruddlesden–Popper oxide (RP214) (001)-oriented thin films. In addition, we demonstrate that the bulk O 2p-band centers can also correlate with the experimental activation energies for bulk oxygen transport and oxygen surface exchange of both the RP214 and the perovskite polycrystalline materials reported in the literature, indicating the effectiveness of the bulk O 2p-band centers in describing the associatedmore » energetics and kinetics. Here, we propose that the opposite slopes of the bulk O 2p-band center correlations between the RP214 and the perovskite materials are due to the intrinsic mechanistic differences of their oxygen surface-exchange kinetics bulk anionic transport.« less

  6. Method and apparatus to measure vapor pressure in a flow system

    DOE Patents [OSTI]

    Grossman, Mark W.; Biblarz, Oscar

    1991-01-01

    The present invention is directed to a method for determining, by a condensation method, the vapor pressure of a material with a known vapor pressure versus temperature characteristic, in a flow system particularly in a mercury isotope enrichment process.

  7. Double-sided reel-to-reel metal-organic chemical vapor deposition...

    Office of Scientific and Technical Information (OSTI)

    chemical vapor deposition system of YBasub 2Cusub 3Osub 7- thin films Citation Details In-Document Search Title: Double-sided reel-to-reel metal-organic chemical vapor ...

  8. Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum...

    Office of Scientific and Technical Information (OSTI)

    vapor pressures at the U.S. Strategic Petroleum Reserve. Citation Details In-Document Search Title: Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum Reserve. ...

  9. Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum...

    Office of Scientific and Technical Information (OSTI)

    Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum Reserve. Citation Details In-Document Search Title: Analysis of crude oil vapor pressures at the U.S. ...

  10. Technology Solutions Case Study: Moisture Durability of Vapor Permeable Insulating Sheathing

    SciTech Connect (OSTI)

    2013-10-01

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  11. Measuring Spatial Variability of Vapor Flux to Characterize Vadose-zone VOC Sources: Flow-cell Experiments

    SciTech Connect (OSTI)

    Mainhagu, Jon; Morrison, C.; Truex, Michael J.; Oostrom, Martinus; Brusseau, Mark

    2014-10-20

    A method termed vapor-phase tomography has recently been proposed to characterize the distribution of volatile organic contaminant mass in vadose-zone source areas, and to measure associated three-dimensional distributions of local contaminant mass discharge. The method is based on measuring the spatial variability of vapor flux, and thus inherent to its effectiveness is the premise that the magnitudes and temporal variability of vapor concentrations measured at different monitoring points within the interrogated area will be a function of the geospatial positions of the points relative to the source location. A series of flow-cell experiments was conducted to evaluate this premise. A well-defined source zone was created by injection and extraction of a non-reactive gas (SF6). Spatial and temporal concentration distributions obtained from the tests were compared to simulations produced with a mathematical model describing advective and diffusive transport. Tests were conducted to characterize both areal and vertical components of the application. Decreases in concentration over time were observed for monitoring points located on the opposite side of the source zone from the local–extraction point, whereas increases were observed for monitoring points located between the local–extraction point and the source zone. The results illustrate that comparison of temporal concentration profiles obtained at various monitoring points gives a general indication of the source location with respect to the extraction and monitoring points.

  12. Reduction of erythema in hairless guinea pigs after cutaneous sulfur mustard vapor exposure by pretreatment with niacinamide, promethazine and indomethacin

    SciTech Connect (OSTI)

    Yourick, J.J.; Dawson, J.S.; Mitcheltree, L.W.

    1995-12-31

    Erythema is the initial symptom that occurs after sulfur mustard (HD) cutaneous exposure. The time course of HD-induced erythema is similar to that observed after UV irradiation, which can be reduced by indomethacin. Sulfur mustard lethality is decreased by using promethazine, which is an antihistamine. Niacinamide can reduce microvesication after HD vapor exposure in hairless guinea pig (HGP) skin. The present study examines the effect of the combined administration of niacinamide, indomethacin and promethazine used alone or in all possible combinations on the degree of erythema and histopathologic skin damage after HD exposure in HGP. Niacinamide (750 mg kg%`, i.p.), promethazine (12.5 mg kg%1, i.m.) or indomethacin (4 mg kg%1, p.o.) used singly or in combination was given as a 30-min pretreatment before an 8-min HD vapor cup skin exposure. Using a combination pretreatment of niacinamide, promethazine and indomethacin, erythema was reduced at 4 (91%) and 6 (55%) h, but not 24 h after HD. The incidence of histopathological skin changes (microvesicles, follicular involvement, epidermal necrosis, intracellular edema and pustular epidermatitis) 24 h after HD was not reduced. This study indicates that HD (induced erythema) may result from several different mechanisms, including inflammation, histamine release and DNA damage. It is suggested that two phases of inflammation may occur: an early phase sensitive to antihistamines and non-steroidal antiinflammatory drugs and a late phase of extensive cell damage that was not sensitive to these drug pretreatments.

  13. Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films

    Office of Scientific and Technical Information (OSTI)

    with low magnetic damping. (Journal Article) | SciTech Connect Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films with low magnetic damping. Citation Details In-Document Search Title: Epitaxial patterning of nanometer-thick Y{sub 3}Fe{sub 5}O{sub 12} films with low magnetic damping. Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and

  14. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  15. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  16. Epitaxial single-crystal thin films of MnxTi1-xO2-? grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    SciTech Connect (OSTI)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-? films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the ?-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  17. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOE Patents [OSTI]

    Sheldon, P.; Hayes, R.E.

    1984-12-04

    Disclosed is a process for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  18. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOE Patents [OSTI]

    Sheldon, Peter; Hayes, Russell E.

    1986-01-01

    A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  19. Electrical transport properties of Ti-doped Fe2O3(0001) epitaxial films

    SciTech Connect (OSTI)

    Zhao, Bo; Kaspar, Tiffany C.; Droubay, Timothy C.; McCloy, John S.; Bowden, Mark E.; Shutthanandan, V.; Heald, Steve M.; Chambers, Scott A.

    2011-12-30

    The electrical transport properties for compositionally and structurally well-defined epitaxial ?-(TixFe1?x)2O3(0001) films have been investigated for x ? 0.09. All films were grown by oxygen plasma-assisted molecular beam epitaxy using two different growth rates: 0.050.06 /s and 0.220.24 /s. Despite no detectable difference in cation valence and structural properties, films grown at the lower rate were highly resistive whereas those grown at the higher rate were semiconducting (? = ?1 ???cm at 25?C). Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm?3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V??s for films grown at the higher rate. The conduction mechanism transitions from small-polaron hopping at higher temperatures to variable-range hopping at a transition temperature between 180 and 140 K. The absence of conductivity in the slow-grown films is attributed to donor electron compensation by cation vacancies, which may form to a greater extent at the lower rate because of higher oxygen fugacity at the growth front.

  20. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

    SciTech Connect (OSTI)

    Bubna, M.; Bolla, G.; Bortoletto, D.; Shipsey, I.; Manfra, M.; Khan, K.; Arndt, K.; Hinton, N.; Godshalk, A.; Kumar, A.; Menasce, D.; Moroni, L.; Chramowicz, J.; Lei, C. M.; Prosser, A.; Rivera, R.; Uplegger, L.; Vetere, Maurizio Lo; Robutti, Enrico; Ferro, Fabrizio; Ravera, Fabio; Costa, Marco

    2015-08-03

    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.