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1

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers  

SciTech Connect (OSTI)

The heteroepitaxial growth of ScN films was investigated on various substrates by hydride vapor phase epitaxy (HVPE). Single crystalline mirror-like ScN(100) and ScN(110) layers were successfully deposited on r- and m-plane sapphire substrates, respectively. Homogeneous stoichiometric films (N/Sc ratio 1.01?±?0.10) up to 40??m in thickness were deposited. Their mosaicity drastically improved with increasing the film thickness. The band gap was determined by optical methods to be 2.06?eV. Impurity concentrations including H, C, O, Si, and Cl were investigated through energy dispersive X-ray spectrometry and secondary ion mass spectrometry. As a result, it was found that the presence of impurities was efficiently suppressed in comparison with that of HVPE-grown ScN films reported in the past, which was possible thanks to the home-designed corrosion-free HVPE reactor. Room-temperature Hall measurements indicated that the residual free electron concentrations ranged between 10{sup 18}–10{sup 20}?cm{sup ?3}, which was markedly lower than the reported values. The carrier mobility increased monotonically with the decreasing in carrier concentration, achieving the largest value ever reported, 284?cm{sup 2}?V{sup ?1}?s{sup ?1} at n?=?3.7?×?10{sup 18}?cm{sup ?3}.

Oshima, Yuichi, E-mail: OSHIMA.Yuichi@nims.go.jp; Víllora, Encarnación G.; Shimamura, Kiyoshi [Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-04-21T23:59:59.000Z

2

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications  

SciTech Connect (OSTI)

Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

2008-01-01T23:59:59.000Z

3

Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy  

SciTech Connect (OSTI)

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1998-06-01T23:59:59.000Z

4

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed  

E-Print Network [OSTI]

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

Wetzel, Christian M.

5

Chemical vapor deposition of epitaxial silicon  

DOE Patents [OSTI]

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Berkman, Samuel (Florham Park, NJ)

1984-01-01T23:59:59.000Z

6

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

Kopp, Viktor S., E-mail: victor.kopp@pdi-berlin.de; Kaganer, Vladimir M. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A. [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St.-Petersburg (Russian Federation); Cherkashin, Nikolay [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France)

2014-02-21T23:59:59.000Z

7

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique  

SciTech Connect (OSTI)

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.

Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de; Kolkovsky, Vl.; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany); Leibiger, Gunnar; Habel, Frank [Freiberger Compound Materials GmbH, 09599 Freiberg (Germany)

2014-10-14T23:59:59.000Z

8

A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices  

E-Print Network [OSTI]

for Photovoltaic Devices Christine Esber Richardson, Brendan M. Kayes, Matthew J. Dicken, and Harry A. Atwater-grained templates is one strategy for the fast, low- temperature growth of large-grained films with hydrogen). Figure 1: Schematic of proposed photovoltaic device incorporating epitaxial Si growth on a large

Atwater, Harry

9

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

10

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

11

Ge-related faceting and segregation during the growth of metastable (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers by metal{endash}organic vapor-phase epitaxy  

SciTech Connect (OSTI)

(GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers, 0{lt}x{lt}0.22, have been grown by metal{endash}organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {l_brace}115{r_brace}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {l_brace}115{r_brace}B surface faceting associated with the phase separation. {copyright} {ital 1999 American Institute of Physics.}

Norman, A.G.; Olson, J.M.; Geisz, J.F.; Moutinho, H.R.; Mason, A.; Al-Jassim, M.M. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States); Vernon, S.M. [Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730 (United States)] [Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730 (United States)

1999-03-01T23:59:59.000Z

12

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

13

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

14

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect (OSTI)

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

15

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

16

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, B.K.

1991-12-17T23:59:59.000Z

17

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire  

E-Print Network [OSTI]

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

Boyer, Edmond

18

Quantitative Infrared Intensity Studies of Vapor-PhaseGlyoxal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal, and 2,3-Butanedione (Diacetyl) with Quantitative Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal,...

19

Absolute integrated intensities of vapor-phase hydrogen peroxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Absolute integrated intensities of vapor-phase hydrogen peroxide (H202) in the mid-infrared at atmospheric pressure. Absolute integrated intensities of vapor-phase hydrogen...

20

Liquid-phase compositions from vapor-phase analyses  

SciTech Connect (OSTI)

Arsenic normally is not considered to be a contaminant. However, because arsenic was found in many cylinders of UF{sub 6}, including in corrosion products, a study was performed of the distribution of the two arsenic fluorides, AsF{sub 3} and AsF{sub 5}, between liquid and vapor phases. The results of the study pertain to condensation or vaporization of liquid UF{sub 6}. This study includes use of various experimental data plus many extrapolations necessitated by the meagerness of the experimental data. The results of this study provide additional support for the vapor-liquid equilibrium model of J.M. Prausnitz and his coworkers as a means of describing the distribution of various impurities between vapor and liquid phases of UF{sub 6}. Thus, it is concluded that AsF{sub 3} will tend to concentrate in the liquid phase but that the concentration of AsF{sub 5} in the vapor phase will exceed its liquid-phase concentration by a factor of about 7.5, which is in agreement with experimental data. Because the weight of the liquid phase in a condensation operation may be in the range of thousands of times that of the vapor phase, most of any AsF{sub 5} will be in the liquid phase in spite of this separation factor of 7.5. It may also be concluded that any arsenic fluorides fed into a uranium isotope separation plant will either travel with other low-molecular-weight gases or react with materials present in the plant. 25 refs., 3 figs., 6 tabs.

Davis, W. Jr. (Oak Ridge Gaseous Diffusion Plant, TN (USA)); Cochran, H.D. (Oak Ridge National Lab., TN (USA))

1990-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Vapor-phase heat-transport system  

SciTech Connect (OSTI)

A vapor-phase heat-transport system is being tested in one of the passive test cells at Los Alamos. The system consists of one selective-surface collector and a condenser inside a water storage tank. The refrigerant, R-11, can be returned to the collector by gravity or with a pump. Results from several operating configurations are presented, together with a comparison with other passive systems. A new self-pumping concept is presented.

Hedstrom, J.C.

1983-01-01T23:59:59.000Z

22

Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films...

23

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

1989-05-01T23:59:59.000Z

24

Vapour-Phase Graphene Epitaxy at Low Temperatures Lianchang Zhang1,2  

E-Print Network [OSTI]

Nano Res 1 Vapour-Phase Graphene Epitaxy at Low Temperatures Lianchang Zhang1,2 , Zhiwen Shi1 2012 ABSTRACT We report an epitaxial growth of graphene, including homo- and hetero-epitaxy on graphite yield large-area high- quality graphene with the desired number of layers over the entire substrate

Zhang, Guangyu

25

The control of confined vapor phase explosions  

SciTech Connect (OSTI)

The probability of, for example, a fire or explosion occurring during a process operation is related both to the fire-related properties of the materials used, such as flash point, flammable limits etc., i.e. the material or intrinsic factors, and the nature of the operation and the equipment used, i.e. the extrinsic factors. The risk, or frequency of occurrence, of other hazards such as reaction runaway, major toxic release etc. can be determined in a similar manner. For a vapor phase explosion (and a fire) the probability of the event is the product of the probability of generating a flammable atmosphere and the probability of ignition. Firstly, materials may be coded using properties that are relevant to the hazard in question. Secondly, different operations have different degrees of risk and these risks are assigned as Low, Medium, High etc. according to criteria outlined here. Combination of these two factors will then be a measure of the overall risk of the operation with the specified material and may be used to define operating standards. Currently, the hazard/risk of a vapor phase explosions is examined by this method but in due course dust explosions, fires, condensed phase explosions, reaction runaways, physical explosions, major toxic releases and incompatibility will be included.

Scilly, N.F. [Laporte plc, Widnes (United Kingdom); Owen, O.J.R. [Fine Organics, Ltd., Middlesborough (United Kingdom); Wilberforce, J.K. [Solvay SA, Brussels (Belgium)

1995-12-31T23:59:59.000Z

26

Monitoring of vapor phase polycyclic aromatic hydrocarbons  

DOE Patents [OSTI]

An apparatus for monitoring vapor phase polycyclic aromatic hydrocarbons in a high-temperature environment has an excitation source producing electromagnetic radiation, an optical path having an optical probe optically communicating the electromagnetic radiation received at a proximal end to a distal end, a spectrometer or polychromator, a detector, and a positioner coupled to the first optical path. The positioner can slidably move the distal end of the optical probe to maintain the distal end position with respect to an area of a material undergoing combustion. The emitted wavelength can be directed to a detector in a single optical probe 180.degree. backscattered configuration, in a dual optical probe 180.degree. backscattered configuration or in a dual optical probe 90.degree. side scattered configuration. The apparatus can be used to monitor an emitted wavelength of energy from a polycyclic aromatic hydrocarbon as it fluoresces in a high temperature environment.

Vo-Dinh, Tuan; Hajaligol, Mohammad R.

2004-06-01T23:59:59.000Z

27

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

2014-01-13T23:59:59.000Z

28

Preliminary assessment of halogenated alkanes as vapor-phase tracers  

SciTech Connect (OSTI)

New tracers are needed to evaluate the efficiency of injection strategies in vapor-dominated environments. One group of compounds that seems to meet the requirements for vapor-phase tracing are the halogenated alkanes (HCFCs). HCFCs are generally nontoxic, and extrapolation of tabulated thermodynamic data indicate that they will be thermally stable and nonreactive in a geothermal environment. The solubilities and stabilities of these compounds, which form several homologous series, vary according to the substituent ratios of fluorine, chlorine, and hydrogen. Laboratory and field tests that will further define the suitability of HCFCs as vapor-phase tracers are under way.

Adams, Michael C.; Moore, Joseph N.; Hirtz, Paul

1991-01-01T23:59:59.000Z

29

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

30

Assessment of radionuclide vapor-phase transport in unsaturated tuff  

SciTech Connect (OSTI)

This report describes bounding calculations performed to investigate the possibility of radionuclide migration in a vapor phase associated with the emplacement of high-level waste canister in unsaturated tuff formations. Two potential radionuclide transport mechanisms in the vapor phase were examined: aerosol migration and convection/diffusion of volatile species. The former may have significant impact on the release of radionuclides to the accessible environment as the concentration in the aerosols will be equal to that in the ground water. A conservative analysis of air diffusion in a stagnant liquid film indicated that for all expected repository conditions, aerosol formation is not possible. The migration of volatile species was examined both in the vicinity of a waste canister and outside the thermally disturbed zone. Two-dimensional (radial) and three-dimensional (radial-vertical) coupled heat transfer-gas flow-liquid flow simulations were performed using the TOUGH computer code. The gas flow rate relative to the liquid flow rate predicted from the simulations allowed calculations of mobility ratios due to convection which led to the conclusion that, except for the immediate region near the canister, transport in the liquid phase will be dominant for radionuclides heavier than radon. Near the waste canister, iodine transport may also be important in the vapor phase. Bounding calculations for vertical mobility ratios were carried out as a function of saturation. These calculations are conservative and agree well with the two-dimensional simulations. Based on this analysis, it is clear that vapor-phase transport will not be important for radionuclides such as cesium and heavier species. Vapor transport for iodine may play a role in the overall release scenario depending on the particular repository conditions.

Smith, D.M.; Updegraff, C.D.; Bonano, E.J.; Randall, J.D.

1986-11-01T23:59:59.000Z

31

Phase effects for electrons in liquid water and water vapor  

SciTech Connect (OSTI)

The objective of these studies is to compare transport, energy loss, and other phenomena for electrons in water in the liquid and vapor phases. Understanding the differences and similarities is an interesting physics problem in its own right. It is also important for applying the relatively large body of experimental data available for the vapor to the liquid, which is of greater relevance in radiobiology. This paper presents a summary of results from a series of collaborative studies carried out by the authors at Oak Ridge National Laboratory (ORNL) and the Gesellschaft fuer Strahlen- und Umweltforschung (GSF). 14 figs.

Turner, J.E.; Paretzke, H.G.; Wright, H.A.; Hamm, R.N.; Ritchie, R.H.

1988-01-01T23:59:59.000Z

32

Structure/processing relationships in vapor-liquid-solid nanowire epitaxy  

E-Print Network [OSTI]

The synthesis of Si and III-V nanowires using the vapor-liquid-solid (VLS) growth mechanism and low-cost Si substrates was investigated. The VLS mechanism allows fabrication of heterostructures which are not readily ...

Boles, Steven Tyler

2010-01-01T23:59:59.000Z

33

Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy  

SciTech Connect (OSTI)

VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.

Fan, L. L.; Chen, S.; Wu, Y. F.; Chen, F. H.; Chu, W. S.; Chen, X.; Zou, C. W. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)] [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Wu, Z. Y. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China) [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049 (China)

2013-09-23T23:59:59.000Z

34

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  

DOE Patents [OSTI]

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

2008-08-05T23:59:59.000Z

35

Effect of dimensionality on vapor-liquid phase transition  

SciTech Connect (OSTI)

Dimensionality play significant role on ‘phase transitions’. Fluids in macroscopic confinement (bulk or 3-Dimensional, 3D) do not show significant changes in their phase transition properties with extent of confinement, since the number of molecules away from the surrounding surfaces is astronomically higher than the number of molecules in close proximity of the confining surfaces. In microscopic confinement (quasi 3D to quasi-2D), however, the number of molecules away from the close proximity of the surface is not as high as is the case with macroscopic (3D) confinement. Hence, under the same thermodynamic conditions ‘phase transition’ properties at microscopic confinement may not remain the same as the macroscopic or 3D values. Phase transitions at extremely small scale become very sensitive to the dimensions as well as the surface characteristics of the system. In this work our investigations reveal the effect of dimensionality on the phase transition from 3D to quasi-2D to 2D behavior. We have used grand canonical transition matrix Monte Carlo simulation to understand the vapor–liquid phase transitions from 3D to quasi-2D behavior. Such studies can be helpful in understanding and controlling the fluid film behaviour confined between solid surfaces of few molecular diameters, for example, in lubrication applications.

Singh, Sudhir Kumar, E-mail: sksingh@thapar.edu [Department Chemical Engineering, Thapar University, Patiala-147004 Punjab (India)

2014-04-24T23:59:59.000Z

36

Vapor phase elemental sulfur amendment for sequestering mercury in contaminated soil  

DOE Patents [OSTI]

The process of treating elemental mercury within the soil is provided by introducing into the soil a heated vapor phase of elemental sulfur. As the vapor phase of elemental sulfur cools, sulfur is precipitated within the soil and then reacts with any elemental mercury thereby producing a reaction product that is less hazardous than elemental mercury.

Looney, Brian B.; Denham, Miles E.; Jackson, Dennis G.

2014-07-08T23:59:59.000Z

37

Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties  

SciTech Connect (OSTI)

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

Coulon, P. M. [CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France); Université de Nice Sophia-Antipolis (UNS), 28 Ave. Valrose, 06103 Nice (France); Mexis, M.; Teisseire, M.; Vennéguès, P.; Leroux, M.; Zuniga-Perez, J., E-mail: jzp@crhea.cnrs.fr [CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France); Jublot, M. [Faculté des Sciences de Saint Jérôme—CP2M, Ave. Escadrille Normandie Niemen, 13397 Marseille (France)

2014-04-21T23:59:59.000Z

38

Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions  

SciTech Connect (OSTI)

Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

2014-08-18T23:59:59.000Z

39

Phase Transition Enthalpy Measurements of Organic and Organometallic Compounds. Sublimation, Vaporization and Fusion Enthalpies From  

E-Print Network [OSTI]

Phase Transition Enthalpy Measurements of Organic and Organometallic Compounds. Sublimation, Vaporization and Fusion Enthalpies From 1880 to 2010 William Acree, Jr. Department of Chemistry, University of North Texas, Denton, Texas 76203 James S. Chickosa... Department of Chemistry and Biochemistry

Chickos, James S.

40

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA  

E-Print Network [OSTI]

]. Silicon carbide has a much better lattice match to GaN (3.4%), and has gained in popularity in recent years as a substrate for both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy of Ga where a transition between streaky and spotty behavior occurs in the reflection high energy electron

Feenstra, Randall

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

The particulate and vapor phase components of airborne polyaromatic hydrocarbons (PAHs) in coal gasification pilot plants  

E-Print Network [OSTI]

THE PARTICULATE AND VAPOR PHASE COMPONENTS OF AIRBORNE POLYAROMATIC HYDROCARBONS(PAHs) IN COAL GASIFICATION PILOT PLANTS A Thesis by ERIC JON BRINK Submitted to the Graduate College of Texas A & M University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE December 1980 Major Subject: Industrial Hygiene THE PARTICULATE AND VAPOR PHASE COMPONENTS OF AIRBORNE POLYAROMATIC HYDROCARBONS (PAHs) IN COAL GASIFICATION PILOT PLANTS A Thesis by ERIC JON BRINK...

Brink, Eric Jon

1980-01-01T23:59:59.000Z

42

VAPOR-CONDENSED PHASE PROCESSES IN THE EARLY SOLAR SYSTEM. L. Grossman. Department of the  

E-Print Network [OSTI]

VAPOR-CONDENSED PHASE PROCESSES IN THE EARLY SOLAR SYSTEM. L. Grossman. Department@uchicago.edu. Equilibrium thermodynamic calculations of the sequence of condensation of phases from a cooling gas of solar that they underwent melting after condensation, crystallizing into the same phase as- semblage as their precursors

Grossman, Lawrence

43

X-ray-induced phase transformation in congruent and vapor-transport-equilibrated lithium tantalate  

E-Print Network [OSTI]

X-ray-induced phase transformation in congruent and vapor-transport-equilibrated lithium tantalate an effect of a partially reversible x-ray-induced increase of diffuse x-ray scattering in both congruent been attributed to x-ray-induced decay of the ferroelectric phase at room temperature. The x-ray

Byer, Robert L.

44

MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.  

SciTech Connect (OSTI)

Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

Dugger, Michael T.; Asay, David B.; Kim, Seong H.

2008-01-01T23:59:59.000Z

45

Condensed phase conversion and growth of nanorods and other materials instead of from vapor  

DOE Patents [OSTI]

Compositions, systems and methods are described for condensed phase conversion and growth of nanorods and other materials. A method includes providing a condensed phase matrix material; and activating the condensed phase matrix material to produce a plurality of nanorods by condensed phase conversion and growth from the condensed phase matrix material instead of from vapor. The compositions are very strong. The compositions and methods provide advantages because they allow (1) formation rates of nanostructures necessary for reasonable production rates, and (2) the near net shaped production of component structures.

Geohegan, David B. (Knoxville, TN); Seals, Roland D. (Oak Ridge, TN); Puretzky, Alex A. (Knoxville, TN); Fan, Xudong (Oak Ridge, TN)

2010-10-19T23:59:59.000Z

46

Sulfur Impregnation on Activated Carbon Fibers through H2S Oxidation for Vapor Phase  

E-Print Network [OSTI]

Sulfur Impregnation on Activated Carbon Fibers through H2S Oxidation for Vapor Phase Mercury: Sulfur was impregnated onto activated carbon fibers ACFs through H2S oxidation catalyzed by the sorbent CE Database subject headings: Activated carbon; Sulfur; Mercury; Hydrogen sulfides; Oxidation

Borguet, Eric

47

Vapor-condensed phase processes in the early solar system Lawrence GROSSMAN*  

E-Print Network [OSTI]

Vapor-condensed phase processes in the early solar system Lawrence GROSSMAN* Department accepted 26 September 2009) Abstract­Equilibrium thermodynamic calculations of the sequence of condensation of condensation, and some may be pristine condensates that escaped later melting. Compact Type A and Type B

Grossman, Lawrence

48

Vapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic devices  

E-Print Network [OSTI]

, many groups have made headway fab- ricating molecular electronic test devices.1­18 These devices exceptions,22,23 the field of mo- lecular electronics is plagued by problems including a lack of deviceVapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic

Bean, John C.

49

Sulfurization of a carbon surface for vapor phase mercury removal II: Sulfur forms and mercury uptake  

E-Print Network [OSTI]

promote the formation of organic sulfur and the presence of H2S during the cooling process increased in the presence of H2S was very effective towards Hg uptake in nitrogen. Corre- lation of mercury uptake capacitySulfurization of a carbon surface for vapor phase mercury removal ­ II: Sulfur forms and mercury

Borguet, Eric

50

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth  

DOE Patents [OSTI]

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

1986-12-30T23:59:59.000Z

51

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth  

DOE Patents [OSTI]

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

1992-02-25T23:59:59.000Z

52

Liquid-phase and vapor-phase dehydration of organic/water solutions  

DOE Patents [OSTI]

Processes for dehydrating an organic/water solution by pervaporation or vapor separation using fluorinated membranes. The processes are particularly useful for treating mixtures containing light organic components, such as ethanol, isopropanol or acetic acid.

Huang, Yu (Palo Alto, CA); Ly, Jennifer (San Jose, CA); Aldajani, Tiem (San Jose, CA); Baker, Richard W. (Palo Alto, CA)

2011-08-23T23:59:59.000Z

53

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

54

Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same  

DOE Patents [OSTI]

An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

Aytug, Tolga (Knoxville, TN); Paranthaman, Mariappan Parans (Knoxville, TN); Polat, Ozgur (Knoxville, TN)

2012-07-17T23:59:59.000Z

55

In situ, subsurface monitoring of vapor-phase TCE using fiber optics  

SciTech Connect (OSTI)

A vapor-phase, reagent-based, fiber optic trichloroethylene (TCE) sensor developed by Lawrence Livermore National Laboratory (LLNL) was demonstrated at the Savannah River Site (SRS) in two configurations. The first incorporated the sensor into a down-well instrument bounded by two inflatable packers capable of sealing an area for discrete depth analysis. The second involved an integration of the sensor into the probe tip of the Army Corps of Engineers Waterways Experiment Station (WES) cone penetrometry system. Discrete depth measurements of vapor-phase concentrations of TCE in the vadose zone were successfully made using both configurations. These measurements demonstrate the first successful in situ sensing (as opposed to sampling) of TCE at a field site.

Rossabi, J. [Westinghouse Savannah River Co., Aiken, SC (United States); Colston, B. Jr.; Brown, S.; Milanovich, F. [Lawrence Livermore National Lab., CA (United States); Lee, L.T. Jr. [Army Engineer Waterways Experiment Station, Vicksburg, MS (United States). Geotechnical Lab.

1993-03-05T23:59:59.000Z

56

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors  

SciTech Connect (OSTI)

Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 10{sup 13} cm{sup -3}) approximately 1 mm thick grown on a heavily doped active layer ({approx} 10{sup 16} cm{sup -3}) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02{sup o} and 10{sup o} from the {l_brace}111{r_brace} toward the {l_brace}100{r_brace}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained {approx}10{sup 15} cm{sup -3} phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to {approx} 10{sup 14} cm{sup -3} but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ({approx}10{sup 16} cm{sup -3}) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ({approx}6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface dropped by an order of magnitude over {approx} 1.5 {micro}m. Layers grown at 550 C did not show significant Sb diffusion. Sn doped In{sub 2}O{sub 3} (ITO) was studied for use in far infrared transparent low temperature contacts for BIB arrays. It was found that {approx}100 nm of ITO deposited on Ge remains electrically conducting at 4 K and is {approx}90% transparent in the far infrared. ITO should be suitable for passivating contacts to Ge BIB arrays.

Bandaru, Jordana

2001-05-12T23:59:59.000Z

57

Molecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Richard J. Sadus  

E-Print Network [OSTI]

coexistence. 1. Introduction Henry's constant is a well-known measure of a solute's solubility in a particularMolecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Boundaries Richard to determine Henry's constant from the residual chemical potential at infinite dilution at the vapor-liquid

58

A description of the vapor phase in the lithium thionyl chloride battery  

E-Print Network [OSTI]

A DESCRIPTION OF TIIE YAPOP, PHASE IN THF. LITHIUM THIONYI. CHLORIDE BATTERY A Thesis by RODOLFO MORALES, JR. Submitted to the Graduate College of Texas AEzM University in partial fulfrHment of the requirement for the degree oi' MASTER... OF SCIENCE August 1988 Major Subject: Chemical Engineering A DESCRIPTION OF THE VAPOR PHASE IN THE LITHIUM THIONYL CHLORIDE BATTERY A Thesis bv RODOLFO 'vIORALES, JR. Approved as to style and content by: Ralph E. White (Chairman of Committee) James...

Morales, Rodolfo

1988-01-01T23:59:59.000Z

59

Enhanced Vapor-Phase Diffusion in Porous Media - LDRD Final Report  

SciTech Connect (OSTI)

As part of the Laboratory-Directed Research and Development (LDRD) Program at Sandia National Laboratories, an investigation into the existence of enhanced vapor-phase diffusion (EVD) in porous media has been conducted. A thorough literature review was initially performed across multiple disciplines (soil science and engineering), and based on this review, the existence of EVD was found to be questionable. As a result, modeling and experiments were initiated to investigate the existence of EVD. In this LDRD, the first mechanistic model of EVD was developed which demonstrated the mechanisms responsible for EVD. The first direct measurements of EVD have also been conducted at multiple scales. Measurements have been made at the pore scale, in a two- dimensional network as represented by a fracture aperture, and in a porous medium. Significant enhancement of vapor-phase transport relative to Fickian diffusion was measured in all cases. The modeling and experimental results provide additional mechanisms for EVD beyond those presented by the generally accepted model of Philip and deVries (1957), which required a thermal gradient for EVD to exist. Modeling and experimental results show significant enhancement under isothermal conditions. Application of EVD to vapor transport in the near-surface vadose zone show a significant variation between no enhancement, the model of Philip and deVries, and the present results. Based on this information, the model of Philip and deVries may need to be modified, and additional studies are recommended.

Ho, C.K.; Webb, S.W.

1999-01-01T23:59:59.000Z

60

Au-mediated low-temperature solid phase epitaxial growth of a SixGe1 x alloy on Si(001)  

E-Print Network [OSTI]

a silicide or a germanide of a near noble metal e.g., Pd, Pt , obtained by the reaction of the metal- taxial growth techniques. Metal-mediated solid phase epitaxy SPE has been stud- ied in a variety or Ge is accomplished at low temperatures by using a eutectic-forming metal e.g., Au, Al, Ag, etc

Allen, Leslie H.

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization  

SciTech Connect (OSTI)

Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10?nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050?°C was 0.83 cm{sup 2}/V?s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya; Takahashi, Teppei; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Hiyama, Takaki; Takai, Eisuke; Ohashi, Gai; Shiraki, Kentaro [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-06-16T23:59:59.000Z

62

On the existence of vapor-liquid phase transition in dusty plasmas  

SciTech Connect (OSTI)

The phenomenon of phase transition in a dusty-plasma system (DPS) has attracted some attention in the past. Earlier Farouki and Hamaguchi [J. Chem. Phys. 101, 9876 (1994)] have demonstrated the existence of a liquid to solid transition in DPS where the dust particles interact through a Yukawa potential. However, the question of the existence of a vapor-liquid (VL) transition in such a system remains unanswered and relatively unexplored so far. We have investigated this problem by performing extensive molecular dynamics simulations which show that the VL transition does not have a critical curve in the pressure versus volume diagram for a large range of the Yukawa screening parameter ? and the Coulomb coupling parameter ?. Thus, the VL phase transition is found to be super-critical, meaning that this transition is continuous in the dusty plasma model given by Farouki and Hamaguchi. We provide an approximate analytic explanation of this finding by means of a simple model calculation.

Kundu, M.; Sen, A.; Ganesh, R. [Institute for Plasma Research, Bhat, Gandhinagar 382 428, Gujarat (India); Avinash, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2014-10-15T23:59:59.000Z

63

Tank vapor sampling and analysis data package for tank 241-C-106 waste retrieval sluicing system process test phase III  

SciTech Connect (OSTI)

This data package presents sampling data and analytical results from the March 28, 1999, vapor sampling of Hanford Site single-shell tank 241-C-106 during active sluicing. Samples were obtained from the 296-C-006 ventilation system stack and ambient air at several locations. Characterization Project Operations (CPO) was responsible for the collection of all SUMMATM canister samples. The Special Analytical Support (SAS) vapor team was responsible for the collection of all triple sorbent trap (TST), sorbent tube train (STT), polyurethane foam (PUF), and particulate filter samples collected at the 296-C-006 stack. The SAS vapor team used the non-electrical vapor sampling (NEVS) system to collect samples of the air, gases, and vapors from the 296-C-006 stack. The SAS vapor team collected and analyzed these samples for Lockheed Martin Hanford Corporation (LMHC) and Tank Waste Remediation System (TWRS) in accordance with the sampling and analytical requirements specified in the Waste Retrieval Sluicing System Vapor Sampling and Analysis Plan (SAP) for Evaluation of Organic Emissions, Process Test Phase III, HNF-4212, Rev. 0-A, (LMHC, 1999). All samples were stored in a secured Radioactive Materials Area (RMA) until the samples were radiologically released and received by SAS for analysis. The Waste Sampling and Characterization Facility (WSCF) performed the radiological analyses. The samples were received on April 5, 1999.

LOCKREM, L.L.

1999-08-13T23:59:59.000Z

64

The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol  

SciTech Connect (OSTI)

The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

2014-02-05T23:59:59.000Z

65

Vapor phase ketonization of acetic acid on ceria based metal oxides  

SciTech Connect (OSTI)

The activities of CeO2, Mn2O3-CeO2 and ZrO2-CeO2 were measured for acetic acid ketonization under reaction conditions relevant to pyrolysis vapor upgrading. We show that the catalyst ranking changed depending on the reaction conditions. Mn2O3-CeO2 was the most active catalyst at 350 oC, while ZrO2 - CeO2 was the most active catalyst at 450 oC. Under high CO2 and steam concentration in the reactants, Mn2O3-CeO2 was the most active catalyst at 350 and 450 °C. The binding energies of steam and CO2 with the active phase were calculated to provide the insight into the tolerance of Mn2O3-CeO2 to steam and CO2.

Liu, Changjun; Karim, Ayman M.; Lebarbier, Vanessa MC; Mei, Donghai; Wang, Yong

2013-12-01T23:59:59.000Z

66

Method for rapid, controllable growth and thickness, of epitaxial silicon films  

DOE Patents [OSTI]

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Wang, Qi (Littleton, CO); Stradins, Paul (Golden, CO); Teplin, Charles (Boulder, CO); Branz, Howard M. (Boulder, CO)

2009-10-13T23:59:59.000Z

67

Method for the generation of variable density metal vapors which bypasses the liquidus phase  

DOE Patents [OSTI]

The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

Kunnmann, Walter (Stony Brook, NY); Larese, John Z. (Rocky Point, NY)

2001-01-01T23:59:59.000Z

68

Comparative study of polar and semipolar (112{sup ¯}2) InGaN layers grown by metalorganic vapour phase epitaxy  

SciTech Connect (OSTI)

InGaN layers were grown simultaneously on (112{sup ¯}2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750?°C), the indium content (<15%) of the (112{sup ¯}2) and (0001) InGaN layers was similar. However, for temperatures less than 750?°C, the indium content of the (112{sup ¯}2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112{sup ¯}2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112{sup ¯}2) InGaN layers showed an emission wavelength that shifts gradually from 380?nm to 580?nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112{sup ¯}2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

Dinh, Duc V., E-mail: vanduc.dinh@tyndall.ie, E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z. [Tyndall National Institute, University College Cork, Lee Matltings, Dyke Parade, Cork (Ireland); Oehler, F.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Alam, S. N.; Parbrook, P. J., E-mail: vanduc.dinh@tyndall.ie, E-mail: peter.parbrook@tyndall.ie [Tyndall National Institute, University College Cork, Lee Matltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland); Caliebe, M.; Scholtz, F. [Institute of Optoelectronics, Ulm University, Ulm 89069 (Germany)

2014-10-21T23:59:59.000Z

69

Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation  

SciTech Connect (OSTI)

Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

2014-11-21T23:59:59.000Z

70

Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.  

E-Print Network [OSTI]

??The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of… (more)

Anderson, Kathy Perkins Jenkins

2011-01-01T23:59:59.000Z

71

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy  

E-Print Network [OSTI]

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

Li, Lian

72

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol  

SciTech Connect (OSTI)

Abstract Carbon supported metal catalysts (Cu/C, Fe/C, Pd/C, Pt/C, PdFe/C and Ru/C) have been prepared, characterized and tested for vapor-phase hydrodeoxygenation (HDO) of guaiacol (GUA) at atmospheric pressure. Phenol was the major intermediate on all catalysts. Over the noble metal catalysts saturation of the aromatic ring was the major pathway observed at low temperature (250 °C), forming predominantly cyclohexanone and cyclohexanol. Substantial ring opening reaction was observed on Pt/C and Ru/C at higher reaction temperatures (e.g., 350 °C). Base metal catalysts, especially Fe/C, were found to exhibit high HDO activity without ring-saturation or ring-opening with the main products being benzene, phenol along with small amounts of cresol, toluene and trimethylbenzene (TMB). A substantial enhancement in HDO activity was observed on the PdFe/C catalysts. Compared with Fe/C, the yield to oxygen-free aromatic products (i.e., benzene/toluene/TMB) on PdFe/C increased by a factor of four at 350 °C, and by approximately a factor of two (83.2% versus 43.3%) at 450 °C. The enhanced activity of PdFe/C is attributed to the formation of PdFe alloy as evidenced by STEM, EDS and TPR.

Sun, Junming; Karim, Ayman M.; Zhang, He; Kovarik, Libor; Li, Xiaohong S.; Hensley, Alyssa; McEwen, Jean-Sabin; Wang, Yong

2013-10-01T23:59:59.000Z

73

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy  

SciTech Connect (OSTI)

This research has shown that epilayers with residual impurity concentrations of 5 x 10{sup 13} cm{sup {minus}3} can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at proper wavelengths when reversed biased even though the response did not quite reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm{sup {minus}1} with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

Olsen, C.S. [Lawrence Berkeley National Lab., CA (United States). Engineering Div.]|[Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering Dept.

1998-05-01T23:59:59.000Z

74

A series of layered intergrowth phases grown by molecular beam epitaxy: Sr{sub m}TiO{sub 2+m}(m=1-5)  

SciTech Connect (OSTI)

Sr{sub m}TiO{sub 2+m} phases having one TiO{sub 2} layer sandwiched between m SrO layers were grown using molecular beam epitaxy. The out-of-plane (in-plane) lattice parameters determined by x-ray diffraction were c(a)=9.14 A (3.78 A), 23.55 A (3.75 A), and 14.60 A (3.75 A) for Sr{sub 3}TiO{sub 5}, Sr{sub 4}TiO{sub 6}, and Sr{sub 5}TiO{sub 7}, respectively. Both lattice parameters change abruptly on going from the m=2 Ruddlesden-Popper phase to m=3 phase, indicating a significant change in the bond lengths (or strain states) on transitioning from the known members to the higher order members of this structural family. Electron microscopy confirmed the artificially layered structures.

Fisher, P.; Wang, S.; Skowronski, M.; Salvador, P. A.; Snyder, M.; Maksimov, O. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Electro-Optics Center, Pennsylvania State University, Freeport, Pennsylvania 16229 (United States)

2007-12-17T23:59:59.000Z

75

The role of polymer formation during vapor phase lubrication of silicon.  

SciTech Connect (OSTI)

The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. With a sufficient concentration of pentanol vapor present, sliding of a silica ball on an oxidized silicon wafer can proceed with no measurable wear. The initial results of time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of wear surfaces revealed a reaction product having thickness on the order of a monolayer, and with an ion spectrum that included fragments having molecular weights of 200 or more that occurred only inside the wear tracks. The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that reactions of adsorbed alcohols on the wearing surfaces allowed polymerization of the alcohols to form higher molecular weight species. In addition to pin-on-disk studies, lubrication of silicon surfaces with pentanol vapors has also been demonstrated using MicroElectroMechanical Systems (MEMS) devices. Recent investigations of the reaction mechanisms of the alcohol molecules with the oxidized silicon surfaces have shown that wearless sliding requires a concentration of the alcohol vapor that is dependent upon the contact stress during sliding, with higher stress requiring a greater concentration of alcohol. Different vapor precursors including those with acid functionality, olefins, and methyl termination also produce polymeric reaction products, and can lubricate the silica surfaces. Doping the operating environment with oxygen was found to quench the formation of the polymeric reaction product, and demonstrates that polymer formation is not necessary for wearless sliding.

Dugger, Michael Thomas; Dirk, Shawn M.; Ohlhausen, James Anthony

2010-10-01T23:59:59.000Z

76

Treatment of Produced Water Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System  

SciTech Connect (OSTI)

Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. Produced waters typically contain a high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component as well as chemicals added during the oil-production process. It has been estimated that a total of 14 billion barrels of produced water were generated in 2002 from onshore operations (Veil, 2004). Although much of this produced water is disposed via reinjection, environmental and cost considerations can make surface discharge of this water a more practical means of disposal. In addition, reinjection is not always a feasible option because of geographic, economic, or regulatory considerations. In these situations, it may be desirable, and often necessary from a regulatory viewpoint, to treat produced water before discharge. It may also be feasible to treat waters that slightly exceed regulatory limits for re-use in arid or drought-prone areas, rather than losing them to reinjection. A previous project conducted under DOE Contract DE-AC26-99BC15221 demonstrated that surfactant modified zeolite (SMZ) represents a potential treatment technology for produced water containing BTEX. Laboratory and field experiments suggest that: (1) sorption of benzene, toluene, ethylbenzene and xylenes (BTEX) to SMZ follows linear isotherms in which sorption increases with increasing solute hydrophobicity; (2) the presence of high salt concentrations substantially increases the capacity of the SMZ for BTEX; (3) competitive sorption among the BTEX compounds is negligible; and, (4) complete recovery of the SMZ sorption capacity for BTEX can be achieved by air sparging the SMZ. This report summarizes research for a follow on project to optimize the regeneration process for multiple sorption/regeneration cycles, and to develop and incorporate a vapor phase bioreactor (VPB) system for treatment of the off-gas generated during air sparging. To this end, we conducted batch and column laboratory SMZ and VPB experiments with synthetic and actual produced waters. Based on the results of the laboratory testing, a pilot scale study was designed and conducted to evaluate the combined SMZ/VPB process. An economic and regulatory feasibility analysis was also completed as part of the current study to assess the viability of the process for various water re-use options.

Lynn E. Katz; Kerry A. Kinney; Robert S. Bowman; Enid J. Sullivan; Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Craig R. Altare

2006-01-31T23:59:59.000Z

77

TREATMENT OF PRODUCED WATERS USING A SURFACTANT MODIFIED ZEOLITE/VAPOR PHASE BIOREATOR SYSTEM  

SciTech Connect (OSTI)

Co-produced water from the oil and gas industry is by some estimates the largest single waste stream in the country, aside from nonhazardous industrial wastes. Characteristics of produced water include high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component, and chemicals added during the oil-production process. While most of the produced water is disposed via reinjection, some of them must be treated to remove organic constituents before the water is discharged. An efficient, cost-effective treatment technology is needed to remove these constituents. Surfactant-modified zeolite (SMZ) has been used successfully to treat contaminated ground water for organic and inorganic constituents. In addition, the low cost of natural zeolites makes their use attractive in water-treatment applications. Our previous DOE research work (DE-AC26-99BC15221) demonstrated that SMZ could successfully remove BTEX compounds from the produced water. In addition, SMZ could be regenerated through a simple air sparging process. The primary goal of this project is to develop a robust SMZ/VPB treatment system to efficiently remove the organic constituents from produced water in a cost-effective manner. This report summarizes work of this project from March 2003 through September 2003. We have continued our investigation of SMZ regeneration from our previous DOE project. Ten saturation/stripping cycles have been completed for SMZ columns saturated with BTEX compounds. The results suggest that BTEX sorption capacity is not lost after ten saturation/regeneration cycles. The composition of produced water from a site operated by Crystal Solutions Ltd. in Wyoming has been characterized and was used to identify key semi-volatile components. Isotherms with selected semi-volatile components have been initiated and preliminary results have been obtained. The experimental vapor phase bioreactors for this project have been designed and assembled to treat the off-gas from the SMZ regeneration process. These columns will be used both in the laboratory and in the proposed field testing to be conducted next year. Innocula for the columns that degrade all of the BTEX columns have been developed.

LYNN E. KATZ; KERRY A. KINNEY; R.S. BOWMAN; E.J. SULLIVAN

2003-10-01T23:59:59.000Z

78

Evaluation of Catalysts from Different Origin for Vapor Phase Upgrading in Biomass Pyrolysis  

SciTech Connect (OSTI)

Liquid fuels and chemicals from biomass resources arouse much interests in research and development. Fast pyrolysis of biomass has the potential to effectively change solid biomass materials into liquid products. However, bio-oil from traditional pyrolysis processes is difficult to apply in industry, because of its complicated composition, high oxygen content, low stability, etc. Upgrading or refining of the bio-oil should be performed for industrial application of biomass pyrolysis. Often, the process would be done in a separate reactor downstream of the pyrolysis process. In this paper, a laboratory scale micro test facility was constructed, wherein the pyrolysis of pine and catalytic upgrading of the resulting vapors were closely coupled in one reactor. The composition of vapor effluent was monitored with a molecular beam mass spectrometer (MBMS) for the online evaluation of the catalyst performance. Catalysts from different origin were tested and compared for the effectiveness of pyrolysis vapor upgrading, namely commercial zeolites, Ni based steam reforming catalyst, CaO, MgO, and several laboratory-made catalysts. The reaction temperature for catalytic upgrading varied between 400 and 600 centigrade, and the gaseous residence time ranged from 0.1 second to above 2 second, to simulate the conditions in industrial application. It is revealed that some catalysts are active in transform most of primary biomass pyrolysis vapors into hydrocarbons, resulting in nonoxygenated products, which is beneficial for downstream utilization. Others are not as effective, results in minor improvement compared with blank test results.

Zhang, X.; Mukarakate, C.; Zheng, Z.; Nimlos, M.

2012-01-01T23:59:59.000Z

79

Photoresponse properties of large-area MoS{sub 2} atomic layer synthesized by vapor phase deposition  

SciTech Connect (OSTI)

Photoresponse properties of a large area MoS{sub 2} atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS{sub 2} atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS{sub 2} devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

Luo, Siwei; Qi, Xiang, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn [Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, People's Republic of China Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)

2014-10-28T23:59:59.000Z

80

Chemical beam epitaxy for high efficiency photovoltaic devices  

SciTech Connect (OSTI)

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
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81

Condensed phase conversion and growth of nanorods instead of from vapor  

DOE Patents [OSTI]

Compositions, systems and methods are described for condensed phase conversion and growth of nanorods and other materials. A method includes providing a condensed phase matrix material; and activating the condensed phase matrix material to produce a plurality of nanorods by condensed phase conversion and growth from the condensed chase matrix material instead of from vacor. The compositions are very strong. The compositions and methods provide advantages because they allow (1) formation rates of nanostructures necessary for reasonable production rates, and (2) the near net shaped production of component structures.

Geohegan, David B.; Seals, Roland D.; Puretzky, Alex A.; Fan, Xudong

2005-08-02T23:59:59.000Z

82

ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping  

DOE Patents [OSTI]

A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20T23:59:59.000Z

83

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

84

Phase-Controlled Growth of Metastable Fe5Si3 Nanowires by a Vapor Transport Method  

E-Print Network [OSTI]

to produce other metal-rich silicide nanostructures for future spintronic devices. Introduction Iron. Depending on the concentration ratio of FeI2(g) to SiI4(g), different phases of iron silicides are formed. The growth of nanowires is facilitated by the initial nucleation of silicide particles on the substrate

Kim, Bongsoo

85

A lattice Boltzmann study of phase separation in liquid-vapor systems with gravity  

E-Print Network [OSTI]

Phase separation of a two-dimensional van der Waals fluid subject to a gravitational force is studied by numerical simulations based on lattice Boltzmann methods (LBM) implemented with a finite difference scheme. A growth exponent $\\alpha=1$ is measured in the direction of the external force.

A. Cristea; G. Gonnella; A. Lamura; V. Sofonea

2009-07-16T23:59:59.000Z

86

Vapor-phase synthesis of a solid precursor for {alpha}-alumina through a catalytic decomposition of aluminum triisopropoxide  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer A new solid precursor for {alpha}-alumina was prepared at about 200 Degree-Sign C from aluminum tri-isopropoxide vapor. Black-Right-Pointing-Pointer The obtained precursor was calcined at 1200 Degree-Sign C to form {alpha}-alumina particles, 75 nm in surface area equivalent diameter. Black-Right-Pointing-Pointer The weight loss of the precursor upon calcination was 24%, lower than that of Al(OH){sub 3}, a conventional alumina precursor. -- Abstract: A new solid precursor, hydrous aluminum oxide, for {alpha}-alumina nanoparticles was prepared by thermal decomposition of aluminum triisopropoxide (ATI) vapor in a 500 mL batch reactor at 170-250 Degree-Sign C with HCl as catalyst. The conversion of ATI increased with increasing temperature and catalyst content; it was nearly complete at 250 Degree-Sign C with the catalyst at 10 mol% of the ATI. The obtained precursor particles were amorphous, spherical and loosely agglomerated. The primary particle size is in the range 50-150 nm. The ignition loss of the precursor was 24%, considerably lower than 35% of Al(OH){sub 3}, the popular precursor for alumina particles. Upon calcination of the precursor at 1200 Degree-Sign C in the air with a heating rate of 10 Degree-Sign C/min and a holding time of 2 h, the phase was completely transformed into {alpha}. The spherical particles composing the precursor turned worm-like by the calcination probably due to sintering between neighboring particles. The surface area equivalent diameter of the resulting {alpha}-alumina was 75 nm.

Nguyen, Tu Quang [Department of Chemical Engineering, Kongju National University, 275 Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of)] [Department of Chemical Engineering, Kongju National University, 275 Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Park, Kyun Young, E-mail: kypark@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, 275 Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Jung, Kyeong Youl [Department of Chemical Engineering, Kongju National University, 275 Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of)] [Department of Chemical Engineering, Kongju National University, 275 Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Cho, Sung Baek [Korea Institute of Geoscience and Mineral Resources (KIGAM), 92 Gwahang-no, Yuseong-gu 305-350 (Korea, Republic of)] [Korea Institute of Geoscience and Mineral Resources (KIGAM), 92 Gwahang-no, Yuseong-gu 305-350 (Korea, Republic of)

2011-12-15T23:59:59.000Z

87

NOVEL PROCESS FOR REMOVAL AND RECOVERY OF VAPOR-PHASE MERCURY  

SciTech Connect (OSTI)

The goal of this project is to investigate the use of a regenerable sorbent for removing and recovering mercury from the flue gas of coal-fired power plants. The process is based on the sorption of mercury by noble metals and the thermal regeneration of the sorbent, recovering the desorbed mercury in a small volume for recycling or disposal. The project was carried out in two phases, covering five years. Phase I ran from September 1995 through September 1997 and involved development and testing of sorbent materials and field tests at a pilot coal-combustor. Phase II began in January 1998 and ended September 2000. Phase II culminated with pilot-scale testing at a coal-fired power plant. The use of regenerable sorbents holds the promise of capturing mercury in a small volume, suitable for either stable disposal or recycling. Unlike single-use injected sorbents such as activated carbon, there is no impact on the quality of the fly ash. During Phase II, tests were run with a 20-acfm pilot unit on coal-combustion flue gas at a 100 lb/hr pilot combustor and a utility boiler for four months and six months respectively. These studies, and subsequent laboratory comparisons, indicated that the sorbent capacity and life were detrimentally affected by the flue gas constituents. Sorbent capacity dropped by a factor of 20 to 35 during operations in flue gas versus air. Thus, a sorbent designed to last 24 hours between recycling lasted less than one hour. The effect resulted from an interaction between SO{sub 2} and either NO{sub 2} or HCl. When SO{sub 2} was combined with either of these two gases, total breakthrough was seen within one hour in flue gas. This behavior is similar to that reported by others with carbon adsorbents (Miller et al., 1998).

Craig S. Turchi

2000-09-29T23:59:59.000Z

88

Effect of Mo Dispersion Size and Water Vapor on Oxidation of Two-Phase Directionally Solidified NiAl-9Mo In-Situ Composites  

SciTech Connect (OSTI)

Oxidation of two-phase NiAl-9Mo eutectics with 3 different growth rates/2nd phase Mo dispersion sizes were investigated at 900 C in air and air with 10% water vapor. Good oxidation resistance via alumina formation was observed in dry air, with Mo volatilization loss minimized by fine submicron Mo dispersions. However, extensive Mo volatilization and in-place internal oxidation of prior Mo phase regions was observed in wet air oxidation. Ramifications of this phenomenon for the development of multi-phase high-temperature alloys are discussed

Brady, Michael P [ORNL] [ORNL; Bei, Hongbin [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL; Lance, Michael J [ORNL] [ORNL; Tortorelli, Peter F [ORNL] [ORNL

2014-01-01T23:59:59.000Z

89

Characteristics of PCDD/F distributions in vapor and solid phases and emissions from the Waelz process  

SciTech Connect (OSTI)

The Waelz process is a classic method used for recovering zinc from electric arc furnace (EAF) dusts containing relatively high concentrations of PCDD/Fs (polychlorinated dibenzo-p-dioxins and polychlorinated dibenzofurans) as well as volatile metals, such as Zn, Pb, and Cu, and chlorine. The EAF dust is mixed with coke (30%) and sand (20%) then fed into a rotary kiln. Significant PCDD/Fs are formed in the typical Waelz process, causing public concerns regarding PCDD/F emissions. In this study, flue gas and ash samplings are simultaneously conducted at different sampling points to evaluate the removal efficiency and the partitioning of PCDD/Fs between the vapor and solid phases in the Waelz plant investigated. With the environment (temperature window, sufficient retention time, chlorine, and catalysts available) conducive to PCDD/F formation in the dust settling chamber (DSC), a significantly high PCDD/F concentration (1223 ng TEQ/Nm{sup 3}) is measured in flue gas downstream from the DSC of the Waelz plant investigated. In addition, the cyclone and bag filter adopted in this facility can only remove 51.3% and 69.4%, respectively, of the PCDD/Fs in the flue gas, resulting in a high PCDD/F concentration (145 ng TEQ/Nm{sup 3}) measured in the stack gas of the Waelz plant investigated. On the basis of treating 1 ton of EAF dust, the total PCDD/F discharge (stack gas emission + ash discharge) is 840 ng TEQ/kg EAF dust of the Waelz plant investigated. Because of the lack of effective air pollutant control devices for PCDD/Fs, about 560 ng TEQ/kg EAF dust are discharged via stack gas in this facility. 16 refs., 7 figs., 2 tabs.

Kai Hsien Chi; Shu Hao Chang; Moo Been Chang [National Central University, Chungli (Taiwan). Graduate Institute of Environmental Engineering

2006-03-15T23:59:59.000Z

90

Epitaxial Graphene - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Epitaxial Graphene Brookhaven National Laboratory Contact BNL About This Technology

Scanning electron micrographs of epitaxial graphene grown on ruthenium films atop patterned...

91

Role of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition  

E-Print Network [OSTI]

-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films a po- tentially optimum process window in which film properties, deposition rates, film uniformity requires high quality dielectric films that can be deposited rapidly and conformally on high aspect ratio

Rubloff, Gary W.

92

Tribology Letters Vol. 10, No. 3, 2001 179 Activation of the SiC surface for vapor phase lubrication  

E-Print Network [OSTI]

above 500 C [2,3,11,12]. Since liquid lubricants cannot withstand such extreme conditions, a number deposition 1. Introduction The lubrication of ceramic surfaces working at extremely high temperatures has lubrication by Fe chemical vapor deposition from Fe(CO)5 Daxing Ren, Dougyong Sung and Andrew J. Gellman

Gellman, Andrew J.

93

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

94

Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics  

SciTech Connect (OSTI)

In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Epitaxial growth means crystal growth that progresses while inheriting the laminar structure and the orientation of substrate crystals. One of the technological problems is to obtain homogeneous growth rate over the main deposit area. Since there are many agents influencing reaction on crystal area such as temperature, pressure, gas flow or reactor geometry, it is difficult to design optimal process. According to the fact that it's impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during crystal growth, modeling is the only solution to understand the process precisely. Numerical simulations allow to understand the epitaxial process by calculation of heat and mass transfer distribution during growth of gallium nitride. Including chemical reactions in numerical model allows to calculate the growth rate of the substrate and estimate the optimal process conditions for obtaining the most homogeneous product.

Skibinski, Jakub; Wejrzanowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Woloska 141, 02507 Warsaw (Poland); Caban, Piotr [Institute of Electronic Materials Technology, Wolczynska 133, 01919 Warsaw (Poland); Kurzydlowski, Krzysztof J. [Warsaw University of Technology, Faculty of Materials Science and Engineering Woloska, 141, 02507 Warsaw (Poland)

2014-10-06T23:59:59.000Z

95

Cantilever epitaxial process  

DOE Patents [OSTI]

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

Ashby, Carol I.; Follstaedt, David M.; Mitchell, Christine C.; Han, Jung

2003-07-29T23:59:59.000Z

96

Quantitative Infrared Intensity Studies of Vapor-Phase Glyoxal, Methylglyoxal, and 2,3-Butanedione (Diacetyl) with Vibrational Assignments  

SciTech Connect (OSTI)

Glyoxal, methylglyoxal and 2,3-butanedione (diacetyl) are all known biomass burning effluents and suspected aerosol precursors. Pressure-broadened quantitative infrared spectra of glyoxal, methylglyoxal and diacetyl vapors covering the 520–6500 cm?1 range are reported at 0.11 cm?1 resolution, each with a composite spectrum derived from a minimum of ten different sample pressures for the compound, representing some of the first quantitative data for these analytes. The ordinate corresponds to a 1 meter optical pathlength and a mixing ratio of 1ppmv at 296 K. Many vibrational assignments for methylglyoxal are reported for the first time, as are some near-IR and far-IR bands of glyoxal and diacetyl. To complete the vibrational assignments, the quantitative far-infrared spectra (25 to 600 cm-1) of all three vapors are also reported, methylglyoxal for the first time. Density functional theory and ab initio MP2 theory are used to help assign vibrational modes. Potential bands useful for atmospheric monitoring are discussed.

Profeta, Luisa T.; Sams, Robert L.; Johnson, Timothy J.; Williams, Stephen D.

2011-09-08T23:59:59.000Z

97

Vaporization of zinc from scrap  

SciTech Connect (OSTI)

The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

Ozturk, B.; Fruehan, R.J. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

1996-12-31T23:59:59.000Z

98

Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels, Phase 2: Evaluations of Field Samples and Laboratory Blends  

SciTech Connect (OSTI)

Study to measure the flammability of gasoline/ethanol fuel vapors at low ambient temperatures and develop a mathematical model to predict temperatures at which flammable vapors were likely to form.

Gardiner, D. P.; Bardon, M. F.; LaViolette, M.

2010-04-01T23:59:59.000Z

99

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties  

SciTech Connect (OSTI)

Low-temperature (?200?°C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Ballif, Christophe; De Wolf, Stefaan [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Maladière 71B, CH-2000 Neuchâtel (Switzerland); Alexander, Duncan T. L.; Jeangros, Quentin [École Polytechnique Fédérale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), Station 12, CH-1015 Lausanne (Switzerland)

2014-08-07T23:59:59.000Z

100

Epitaxial thin films  

DOE Patents [OSTI]

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

102

Molecular Beam Epitaxy, Multi-source | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

beam epitaxy, is examined using a combination... Self-corrected Sensors Based On Atomic Absorption Spectroscopy For Atom Flux Measurements In Molecular Beam Epitaxy. A...

103

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated  

E-Print Network [OSTI]

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W through the 106-nm-thick TiN film. W piles up at the TiN/Ti interface, while F rapidly saturates the TiN-sectional and scanning transmission electron microscopy analyses demonstrate that WF6 penetrates into the TiN layer

Allen, Leslie H.

104

Portable vapor diffusion coefficient meter  

DOE Patents [OSTI]

An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

Ho, Clifford K. (Albuquerque, NM)

2007-06-12T23:59:59.000Z

105

Thermophilic Biotrickling Filtration of Ethanol Vapors  

E-Print Network [OSTI]

Thermophilic Biotrickling Filtration of Ethanol Vapors H U U B H . J . C O X , T H O M A S S E X of ethanol vapors in biotrickling filters for air pollution control was investigated. Two reactors were adaptation phase, the removal of ethanol was similar in both reactors. At a bed contact time of 57 s

106

Epitaxial growth of rare-earth silicides on (111) Si  

SciTech Connect (OSTI)

Rapid heating with an electron beam has been used to react overlayers of rare-earth (RE) metals with (111) Si, forming epitaxial layers of silicides of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Under conventional furnace annealing, forming such silicides on Si typically leads to rough, pitted surfaces. The use of fast beam heating not only results in a much smoother surface topology but also helps promote epitaxial growth on (111) Si in both solid and liquid phase reactions. These epitaxial silicides have a hexagonal RESi/sub approximately1.7/ structure (defected AlB/sub 2/ type). Their orientation with the Si substrate is (0001)parallel(111), with predicted lattice mismatches ranging from +0.83 to -2.55%.

Knapp, J.A.; Picraux, S.T.

1986-02-17T23:59:59.000Z

107

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phasehydrodeoxy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol. Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of...

108

Calibrated vapor generator source  

DOE Patents [OSTI]

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

1995-09-26T23:59:59.000Z

109

Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys  

DOE Patents [OSTI]

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

Norman, Andrew G. (Evergreen, CO); Olson, Jerry M. (Lakewood, CO)

2007-06-12T23:59:59.000Z

110

Optical characterization of epitaxial Ga{sub x}In{sub 1{minus}x}As suitable for thermophotovoltaic (TPV) converters  

SciTech Connect (OSTI)

A preliminary investigation of the optical characteristics of Ga{sub x}In{sub 1{minus}x}As epilayers is presented. Ga{sub x}In{sub 1{minus}x}As epilayers with x = 0.465, 0.400, and 0.277 were prepared by metalorganic vapor-phase epitaxy (MOVPE) to represent a wide spectrum of TPV converter applications. Ellipsometric measurements, combined with various characterization techniques and multi-layer modeling, are used to extract n({lambda}) and k({lambda}) for these epilayers. The validity of the results was checked by using the experimentally determined optical constants to calculate expected reflectance, and then comparing this result against measured reflectance. Good agreement was obtained in all cases; larger differences were observed for samples having greater surface roughness. Suggestions for improving the optical constant determination procedure are given.

Wangensteen, T.L.; Wanlass, M.W.; Carapella, J.J.; Moutinho, H.R.; Mason, A.R.; Webb, J.D.; Abulfotuh, F.A. [National Renewable Energy Lab., Golden, CO (United States)

1997-12-31T23:59:59.000Z

111

Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition  

E-Print Network [OSTI]

exfoliation of graphite [1], sublimation of epitaxial SiC [4], and catalyst-assisted chemical vapor deposition (CVD) [5­9]. However, mechanical exfoliation of graphite can only supply small-size graphene (see Fig than that of graphene obtained via exfoli- ation of graphite as summarized in Fig. 1. While many

112

Nanowire-templated lateral epitaxial growth of non-polar group III nitrides  

DOE Patents [OSTI]

A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

Wang, George T. (Albuquerque, NM); Li, Qiming (Albuquerque, NM); Creighton, J. Randall (Albuquerque, NM)

2010-03-02T23:59:59.000Z

113

Epitaxial Thin Film XRD | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4:Epitaxial Thin Film XRD Epitaxial Thin Film XRD Systems

114

Gas phase photocatalytic degradation on TiO{sub 2} pellets of volatile chlorinated organic compounds from a soil vapor extraction well  

SciTech Connect (OSTI)

The mineralization of trichloroethylene (TCE) and tetrachloroethylene (PCE) in gas stream from a soil vapor extraction (SVE) well was demonstrated with an annular photocatalytic reactor packed with porous TiO{sub 2} pellets in field trials at the Savannah River Site in Aiken, SC. The TiO{sub 2} pellets were prepared using a sol-gel method. The experiments were performed at 55 to 60{degree}C using space times of 10{sup 8} to 10{sup 10} g s/mol for TCE and PCE. Chloroform (CHCl{sub 3}) and carbon tetrachloride (CCl{sub 4}) were detected as minor products from side reactions. On a molar basis, CCl{sub 4} and CHCl{sub 3} produced were about 2% and 0.2 % of the reactants.

Yamazaki-Nishida, S.; Read, H.W.; Nagano, J.K.; Anderson, M.A. [Wisconsin Univ., Madison, WI (United States). Water Chemistry Program; Cervera-March, S. [Barcelona Univ., (Spain). Department of Chemical Engineering; Jarosch, T.R.; Eddy-Dilek, C.A. [Westinghouse Savannah River Co., Aiken, SC (United States)

1993-05-20T23:59:59.000Z

115

Vapor spill monitoring method  

DOE Patents [OSTI]

Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

1985-01-01T23:59:59.000Z

116

Epitaxial growth of VO{sub 2} by periodic annealing  

SciTech Connect (OSTI)

We report the growth of ultrathin VO{sub 2} films on rutile TiO{sub 2} (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO{sub 2} via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3?nm, where a resistance change ?R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6?nm.

Tashman, J. W.; Paik, H.; Merz, T. A. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Lee, J. H. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of); Moyer, J. A.; Schiffer, P. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Misra, R. [Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mundy, J. A. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Spila, T. [Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Schubert, J. [Peter Grünberg Institute, PGI 9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany); Muller, D. A. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States); Schlom, D. G., E-mail: schlom@cornell.edu [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

2014-02-10T23:59:59.000Z

117

Vaporization of synthetic fuels. Final report. [Thesis  

SciTech Connect (OSTI)

The problem of transient droplet vaporization in a hot convective environment is examined. The main objective of the present study is to develop an algorithm for the droplet vaporization which is simple enough to be feasibly incorporated into a complete spray combustion analysis and yet will also account for the important physics such as liquid-phase internal circulation, unsteady droplet heating and axisymmetric gas-phase convection. A simplified liquid-phase model has been obtained based on the assumption of the existence of a Hill's spherical vortex inside the droplet together with some approximations made in the governing diffusion equation. The use of the simplified model in a spray situation has also been examined. It has been found that droplet heating and vaporization are essentially unsteady and droplet temperature is nonuniform for a significant portion of its lifetime. It has also been found that the droplet vaporization characteristic can be quite sensitive to the particular liquid-phase and gas-phase models. The results of the various models are compared with the existing experimental data. Due to large scattering in the experimental measurements, particularly the droplet diameter, no definite conclusion can be drawn based on the experimental data. Finally, certain research problems which are related to the present study are suggested for future studies.

Sirignano, W.A.; Yao, S.C.; Tong, A.Y.; Talley, D.

1983-01-01T23:59:59.000Z

118

Characterization of particle- and vapor-phase organic fraction emissions from a heavy-duty diesel engine equipped with a particle trap and regeneration controls  

SciTech Connect (OSTI)

The effects of a ceramic particle trap on the chemical and biological character of the exhaust from a heavy-duty diesel engine have been studied during steady-state operation and during periods of trap regeneration. Phase I of this project involved developing and refining the methods using a Caterpillar 3208 engine, and Phase II involved more detailed experiments with a Cummins LTA10-300 engine, which met Federal 1988 particulate matter standards, and a ceramic particle trap with built-in regeneration controls. During the Phase I experiments, samples wee collected at the Environmental Protection Agency (EPA)* steady-state mode 4 (50% load at intermediate speed). Varying the dilution ratio to obtain a constant filter-face temperature resulted in less variability in total particulate matter (TPM), particle-associated soluble organic fraction (SOF), solids (SOL), and polynuclear aromatic hydrocarbon (PAH) levels than sampling with a constant dilution ratio and allowing filter-face temperature to vary. A modified microsuspension Ames assay detected mutagenicity in the SOF samples, and in the semivolatile organic fraction extracted from XAD-2 resin (XAD-2 resin organic component, XOC) with at least 10 times less sample mass than the standard plate incorporation assay. Measurement techniques for PAH and nitro-PAH in the SOF and XOC also were developed during this portion of the project. For the Phase II work, two EPA steady-state rated speed modes were selected: mode 11 (25% load) and mode 9 (75% load). With or without the trap, filter-face temperatures were kept at 45 degrees +/- 2 degrees C, nitrogen dioxide (NO2) levels less than 5 parts per million (ppm), and sampling times less than 60 minutes. Particle sizes were determined using an electrical aerosol analyzer. Similar sampling methods were used when the trap was regenerated, except that a separate dilution tunnel and sampling system was designed and built to collect all of the regeneration emissions.

Bagley, S.T.; Gratz, L.D.; Leddy, D.G.; Johnson, J.H. (Michigan Technological Univ., Houghton, MI (United States))

1993-07-01T23:59:59.000Z

119

Reductive Dehalogenation of Trichloroethene Vapors in an  

E-Print Network [OSTI]

to treat trichloroethene (TCE) from waste gases generated by soil vapor extraction or dual-phase extraction through the recirculating liquid as a source of hydrogen, the electron donor for Dehalococcoides strains (DPE) (4). However, these techniques result in a waste gas stream that needs further treatment. Several

120

Photoluminescence of GaAs films grown by vacuum chemical epitaxy  

SciTech Connect (OSTI)

GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750 /sup 0/C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

Bernussi, A.A.; Barreto, C.L.; Carvalho, M.M.G.; Motisuke, P.

1988-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Characterization of recombination processes in epitaxial thin films and substrates for antimonide based thermophotovoltaic devices  

SciTech Connect (OSTI)

Recombination processes in antimonide-based materials for thermophotovoltaic (TPV) devices have been investigated using a radio-frequency (RF) photoreflectance technique, in which a Nd-YAG pulsed laser is used to excite excess carriers, and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. Double-capped lattice-matched GaInAsSb organometallic vapor phase epitaxy (OMVPE)--grown layers on GaSb substrates have been used to evaluate bulk lifetime and surface recombination velocity with different layer thicknesses. With an active layer doping of 2 {times} 10{sup 17} cm{sup {minus}3}, effective bulk lifetimes of 95 ns and surface recombination velocities of 1,900 cm/s have been obtained. As the laser intensity is increased the lifetime decreases, which may be indicative of radiative recombination under these high level injection conditions. Similar measurements have been taken on both commercially available GaSb boules as well as in-house grown quaternary GaInAsSb boules. A two-step decay is observed with the quaternary boules, an initial decay of nominally 15 ns which is relatively independent of laser intensity and a second decay of 30--60 ns which increases with decreasing laser intensity. This behavior may be indicative of free charge separation as a result of short-range ordering in the quaternary crystals. GaSb boules, both commercially available and those grown in-house, exhibit more classical characteristics.

Saroop, S.; Borrego, J.; Gutmann, R.; Dutta, P.; Ostrogorsky, A. [Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing; Charache, G. [Lockheed Martin Inc., Schenectady, NY (United States); Wang, C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

1998-06-01T23:59:59.000Z

122

Process for forming epitaxial perovskite thin film layers using halide precursors  

DOE Patents [OSTI]

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Clem, Paul G. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM); Voigt, James A. (Corrales, NM); Ashley, Carol S. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

123

Gasoline vapor recovery  

SciTech Connect (OSTI)

In a gasoline distribution network wherein gasoline is drawn from a gasoline storage tank and pumped into individual vehicles and wherein the gasoline storage tank is refilled periodically from a gasoline tanker truck, a method of recovering liquid gasoline from gasoline vapor that collects in the headspace of the gasoline storage tank as the liquid gasoline is drawn therefrom, said method comprising the steps of: (a) providing a source of inert gas; (b) introducing inert gas into the gasoline storage tank as liquid gasoline is drawn therefrom so that liquid gasoline drawn from the tank is displaced by inert gas and gasoline vapor mixes with the inert gas in the headspace of the tank; (c) collecting the inert gas/gasoline vapor mixture from the headspace of the gasoline storage tank as the tank is refilled from a gasoline tanker truck; (d) cooling the inert gas/gasoline vapor mixture to a temperature sufficient to condense the gasoline vapor in the mixture to liquid gasoline but not sufficient to liquify the inert gas in the mixture; (e) separating the condensed liquid gasoline from the inert gas; and delivering the condensed liquid gasoline to a remote location for subsequent use.

Lievens, G.; Tiberi, T.P.

1993-06-22T23:59:59.000Z

124

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

1983-02-08T23:59:59.000Z

125

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well.

Sederquist, Richard A. (Newington, CT); Szydlowski, Donald F. (East Hartford, CT); Sawyer, Richard D. (Canton, CT)

1983-01-01T23:59:59.000Z

126

Experimental and Modeling Study of the Flammability of Fuel Tank Headspace Vapors from Ethanol/Gasoline Fuels; Phase 3: Effects of Winter Gasoline Volatility and Ethanol Content on Blend Flammability; Flammability Limits of Denatured Ethanol  

SciTech Connect (OSTI)

This study assessed differences in headspace flammability for summertime gasolines and new high-ethanol content fuel blends. The results apply to vehicle fuel tanks and underground storage tanks. Ambient temperature and fuel formulation effects on headspace vapor flammability of ethanol/gasoline blends were evaluated. Depending on the degree of tank filling, fuel type, and ambient temperature, fuel vapors in a tank can be flammable or non-flammable. Pure gasoline vapors in tanks generally are too rich to be flammable unless ambient temperatures are extremely low. High percentages of ethanol blended with gasoline can be less volatile than pure gasoline and can produce flammable headspace vapors at common ambient temperatures. The study supports refinements of fuel ethanol volatility specifications and shows potential consequences of using noncompliant fuels. E85 is flammable at low temperatures; denatured ethanol is flammable at warmer temperatures. If both are stored at the same location, one or both of the tanks' headspace vapors will be flammable over a wide range of ambient temperatures. This is relevant to allowing consumers to splash -blend ethanol and gasoline at fueling stations. Fuels compliant with ASTM volatility specifications are relatively safe, but the E85 samples tested indicate that some ethanol fuels may produce flammable vapors.

Gardiner, D. P.; Bardon, M. F.; Clark, W.

2011-07-01T23:59:59.000Z

127

Organic vapor jet printing system  

DOE Patents [OSTI]

An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

Forrest, Stephen R

2012-10-23T23:59:59.000Z

128

Modeling of LNG Pool Spreading and Vaporization  

E-Print Network [OSTI]

..................................................................................... 15 Figure 5: 90 mol% Methane 10mol% Ethane mixture VLE phase envelope .................. 18 Figure 6: Boiling temperature and vapor composition of 90 mol% methane 10mol% ethane mixture... process of natural gas allows a 600 fold reduction in the volume of the gas being transported at ambient pressure. The resulting liquid which is mainly composed of methane presents some hazardous properties linked to its flammable nature and its...

Basha, Omar 1988-

2012-11-20T23:59:59.000Z

129

E-Print Network 3.0 - acid vapor pressures Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sciences and Ecology 22 3b. Thermodynamics of moist air Water phase, water latent heat of vaporization Lv Summary: 3b. Thermodynamics of moist air Water phase, water latent...

130

Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid-Vapor Pressure Isotope Effects  

E-Print Network [OSTI]

* Department of Chemistry and Biochemistry, University of MissourisSt. Louis, St. Louis, Missouri 63121 Liquid vapor pressure isotope effects have generally been observed, pD > pH.12 Vapor pressure and sublimation

Chickos, James S.

131

Structure, Magnetism and Conductivity in Epitaxial Ti-doped ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Magnetism and Conductivity in Epitaxial Ti-doped -Fe2O3 Hematite: Experiment and density functional theory Structure, Magnetism and Conductivity in Epitaxial Ti-doped -Fe2O3...

132

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

133

Stratified vapor generator  

DOE Patents [OSTI]

A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

2008-05-20T23:59:59.000Z

134

Epitaxial graphene on silicon carbide: Introduction to structured graphene  

E-Print Network [OSTI]

Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

Paris-Sud XI, Université de

135

Storing images in warm atomic vapor  

E-Print Network [OSTI]

Reversible and coherent storage of light in atomic medium is a key-stone of future quantum information applications. In this work, arbitrary two-dimensional images are slowed and stored in warm atomic vapor for up to 30 $\\mu$s, utilizing electromagnetically induced transparency. Both the intensity and the phase patterns of the optical field are maintained. The main limitation on the storage resolution and duration is found to be the diffusion of atoms. A techniqueanalogous to phase-shift lithography is employed to diminish the effect of diffusion on the visibility of the reconstructed image.

M. Shuker; O. Firstenberg; R. Pugatch; A. Ron; N. Davidson

2008-06-17T23:59:59.000Z

136

ARM - Water Vapor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmr DocumentationProductsaodsasheniraodAlaskaVisiting theWater Vapor

137

VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS  

SciTech Connect (OSTI)

This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

Eric M. Suuberg; Vahur Oja

1997-07-01T23:59:59.000Z

138

Production of higher quality bio-oils by in-line esterification of pyrolysis vapor  

DOE Patents [OSTI]

The disclosure encompasses in-line reactive condensation processes via vapor phase esterification of bio-oil to decease reactive species concentration and water content in the oily phase of a two-phase oil, thereby increasing storage stability and heating value. Esterification of the bio-oil vapor occurs via the vapor phase contact and subsequent reaction of organic acids with ethanol during condensation results in the production of water and esters. The pyrolysis oil product can have an increased ester content and an increased stability when compared to a condensed pyrolysis oil product not treated with an atomized alcohol.

Hilten, Roger Norris; Das, Keshav; Kastner, James R; Bibens, Brian P

2014-12-02T23:59:59.000Z

139

Isothermal vapor-liquid equilibrium accompanied by esterification; ethanol-formic acid system  

SciTech Connect (OSTI)

The equilibrium total pressures after reaction between ethanol and formic acid were measured at 30, 40 and 50/sup 0/C, and the compositions of the vapor and liquid phases were determined gas chromatographically. Since the presence of the carboxylic acid in the mixture induces dimerization and trimerization of the acid in the vapor phase, the modified fugacity coefficients were calculated from ''chemical'' theory using the Lewis fugacity rule, from which are calculated the activity coefficients and the vapor-phase mole fractions using the nonrandom, two-liquid (NRTL) equation. The parameters in the NRTL equation were obtained from vapor-liquid equilibrium data for the binary system. The calculated results agree closely with the experimental vapor-phase mole-fraction data.

Rim, J.K.; Bae, S.Y.; Lee, H.T.

1985-07-01T23:59:59.000Z

140

Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films  

SciTech Connect (OSTI)

In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ? attains a large time dependent value. The ? decreases sharply with an increasing angle ? between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}?/sin{sup 2}? dependence for all films. The regular oscillations are recovered during repetitive sweeping of ? between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity.

Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada); Prasad, B. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Egilmez, M. [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)] [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

2013-12-02T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films  

E-Print Network [OSTI]

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin properties of high-quality VO2 thin films across its metal-insulator phase transition. Detailed x-ray deposition,9 sol-gel deriving,10 sputtering,11 and pulsed laser deposition,12 the study of VO2 is reviving

Wu, Junqiao

142

ARM Water Vapor IOP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)Productssondeadjustsondeadjust DocumentationARM Participation in SuomiNet The ARM62ARM Water Vapor IOP

143

Water Vapor Experiment Concludes  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched FerromagnetismWaste and Materials Disposition3 Water Vapor Experiment Concludes The

144

To estimate vapor pressure easily  

SciTech Connect (OSTI)

Vapor pressures as functions of temperature for approximately 700 major organic chemical compounds are given. The tabulation also gives the temperature range for which the data are applicable. Minimum and maximum temperatures are denoted by TMIN and TMAX. The Antoine equation that correlates vapor pressure as a function of temperature is described. A representative comparison of calculated and actual data values for vapor pressure is shown for ethyl alcohol. The coefficient tabulation is based on both literature (experimental data) and estimated values.

Yaws, C.L.; Yang, H.C. (Lamar Univ., Beaumont, TX (USA))

1989-10-01T23:59:59.000Z

145

Vapor spill pipe monitor  

DOE Patents [OSTI]

The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

Bianchini, G.M.; McRae, T.G.

1983-06-23T23:59:59.000Z

146

Relaxation of crystal lattice parameters and structural ordering in In{sub x}Ga{sub 1-x}As epitaxial alloys  

SciTech Connect (OSTI)

Epitaxial In{sub x}Ga{sub 1-x}As/GaAs(100) heterostructures grown by the MOC-hydride method with a considerable lattice mismatch are studied by X-ray diffraction and scanning electron microscopy. The relaxation coefficient of the crystal lattice of the epitaxial alloy is calculated and the deformation energy is evaluated. It is shown that, at a concentration of the In atoms in metal sublattice close to x = 0.5, the superstructural phase formed on the surface of the epitaxial In{sub x}Ga{sub 1-x}As alloy is the InGaAs{sub 2} compound with a layered tetragonal crystal lattice and ordered arrangement of the atoms of the metal sublattice in the growth plane of the epitaxial film.

Seredin, P. V., E-mail: paul@phys.vsu.ru; Glotov, A. V.; Domashevskaya, E. P. [Voronezh State University (Russian Federation); Arsentyev, I. N., E-mail: arsentyev@mail.ioffe.ru; Vinokurov, D. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Stankevich, A. L.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2010-08-15T23:59:59.000Z

147

E-Print Network 3.0 - amorphous phase separation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

University Collection: Physics 74 Atomistic examinations of the solid-phase epitaxial growth of silicon B.A. Gillespie , H.N.G. Wadley Summary: of the crystalline phase into an...

148

E-Print Network 3.0 - amorphous-crystal phase change Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

method using the Tersoff (C) potential. With the solid phase... Phase Epitaxy (SPE) growth (111direction at 2100K). 12;3. 3.1 001, 111 Fig. 3 Fig. 3 -4.25eV 111...

149

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

150

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication  

E-Print Network [OSTI]

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication M. Grujicica-phase chemistry and surface chemistry model is developed to analyze, at the reactor length scale, chemical vapor (carrier gas) in the presence of cobalt catalytic particles in a cylindrical reactor. The model allows

Grujicic, Mica

151

Wafer bonded epitaxial templates for silicon heterostructures  

DOE Patents [OSTI]

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcubera I (Paris, FR)

2008-03-11T23:59:59.000Z

152

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

SciTech Connect (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

153

Passive vapor extraction feasibility study  

SciTech Connect (OSTI)

Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft{sup 3}/min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft{sup 3}/min air flow rates, passive vapor extraction is more cost effective below 100 ppm.

Rohay, V.J.

1994-06-30T23:59:59.000Z

154

Electron holography of devices with epitaxial layers  

SciTech Connect (OSTI)

Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

Gribelyuk, M. A., E-mail: Michael.gribelyuk@globalfoundries.com; Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R. [IBM Systems and Technology Group, Hopewell Junction, New York 12533 (United States)

2014-11-07T23:59:59.000Z

155

ORIGINAL PAPER Epitaxial Stabilization of Face Selective Catalysts  

E-Print Network [OSTI]

with changes in catalytic performance (activity and selec- tivity), using the hydrogenation of acrolein combinations. Keywords Epitaxy Á Perovskite Á Platinum Á Heterogeneous catalysis Á Hydrogenation Á Acrolein

Marks, Laurence D.

156

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

157

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

158

Ultra-low contact resistance at an epitaxial metal/oxide heterojunctio...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ultra-low contact resistance at an epitaxial metaloxide heterojunction through interstitial site doping. Ultra-low contact resistance at an epitaxial metaloxide heterojunction...

159

Atomic-Level Simulation of Epitaxial Recrystallization and Phase  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone byDear Friend,Arthur J.

160

Phase equilibrium measurements on nine binary mixtures  

SciTech Connect (OSTI)

Phase equilibrium measurements have been performed on nine binary mixtures. The PTx method was used to obtain vapor-liquid equilibrium data for the following systems at two temperatures each: (aminoethyl)piperazine + diethylenetriamine; 2-butoxyethyl acetate + 2-butoxyethanol; 2-methyl-2-propanol + 2-methylbutane; 2-methyl-2-propanol + 2-methyl-2-butene; methacrylonitrile + methanol; 1-chloro-1,1-difluoroethane + hydrogen chloride; 2-(hexyloxy)ethanol + ethylene glycol; butane + ammonia; propionaldehyde + butane. Equilibrium vapor and liquid phase compositions were derived form the PTx data using the Soave equation of state to represent the vapor phase and the Wilson or the NRTL activity coefficient model to represent the liquid phase. A large immiscibility region exists in the butane + ammonia system at 0 C. Therefore, separate vapor-liquid-liquid equilibrium measurements were performed on this system to more precisely determine the miscibility limits and the composition of the vapor phase in equilibrium with the two liquid phases.

Wilding, W.V. [Brigham Young Univ., Provo, UT (United States). Chemical Engineering Dept.] [Brigham Young Univ., Provo, UT (United States). Chemical Engineering Dept.; Giles, N.F.; Wilson, L.C. [Wiltec Research Co. Inc., Provo, UT (United States)] [Wiltec Research Co. Inc., Provo, UT (United States)

1996-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997  

SciTech Connect (OSTI)

This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

Anderson, T.

1999-10-20T23:59:59.000Z

162

Vapor deposition of hardened niobium  

DOE Patents [OSTI]

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

1983-04-19T23:59:59.000Z

163

Covalent Functionalization of Epitaxial Graphene by Azidotrimethylsilane Junghun Choi,  

E-Print Network [OSTI]

Covalent Functionalization of Epitaxial Graphene by Azidotrimethylsilane Junghun Choi, Ki-jeong Kim, 2009 Chemically modified epitaxial graphene (EG) by azidotrimethylsilane (ATS) was investigated using graphene (CSG) model, we elucidated that nitrene radicals adsorb on the graphene layer at two different

Kim, Sehun

164

Growth of cubic SiC thin films on Si,,001... by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of  

E-Print Network [OSTI]

Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea K.-W. Lee, M. M. Sung, and Y. Kim Thin by sublimation and liquid phase epitaxial growth is not commer- cially available in sizes above 2 in. Moreover

Boo, Jin-Hyo

165

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency  

SciTech Connect (OSTI)

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4”or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN system was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

Cerio, Frank

2013-09-14T23:59:59.000Z

166

The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance by Correlation Gas  

E-Print Network [OSTI]

by Correlation Gas Chromatography Chase Gobble, Nigam Rath, and James Chickos* Department of Chemistry Information ABSTRACT: Vapor pressures, vaporization, and sublimation enthalpies of several pharmaceuticals and boiling temperatures when available. Sublimation enthalpies and vapor pressures are also evaluated for 1

Chickos, James S.

167

LABORATORY TESTING TO SIMULATE VAPOR SPACE CORROSION IN RADIOACTIVE WASTE STORAGE TANKS  

SciTech Connect (OSTI)

Radioactive liquid waste has been stored in underground carbon steel tanks for nearly 70 years at the Hanford nuclear facility. Vapor space corrosion of the tank walls has emerged as an ongoing challenge to overcome in maintaining the structural integrity of these tanks. The interaction between corrosive and inhibitor species in condensates/supernates on the tank wall above the liquid level, and their interaction with vapor phase constituents as the liquid evaporates from the tank wall influences the formation of corrosion products and the corrosion of the carbon steel. An effort is underway to gain an understanding of the mechanism of vapor space corrosion. Localized corrosion, in the form of pitting, is of particular interest in the vapor space. CPP testing was utilized to determine the susceptibility of the steel in a simulated vapor space environment. The tests also investigated the impact of ammonia gas in the vapor space area on the corrosion of the steel. Vapor space coupon tests were also performed to investigate the evolution of the corrosion products during longer term exposures. These tests were also conducted at vapor space ammonia levels of 50 and 550 ppm NH{sub 3} (0.005, and 0.055 vol.%) in air. Ammonia was shown to mitigate vapor space corrosion.

Wiersma, B.; Garcia-Diaz, B.; Gray, J.

2013-08-30T23:59:59.000Z

168

Vapor-liquid equilibria of ethanol with 2,2,4-trimethylpentane or octane at 101. 3 kPa  

SciTech Connect (OSTI)

Vapor-liquid equilibria (VLE) are required for engineering use such as in the design and operation of separation processes. Isobaric vapor-liquid equilibria were measured for ethanol with 2,2,4-trimethylpentane or octane at 101.3 kPa in an equilibrium still with circulation of both the vapor and liquid phases. The results were correlated with the Wilson and nonrandom two-liquid (NRTL) equations.

Hiaki, Toshihiko; Takahashi, Kenji; Tsuji, Tomoya; Hongo, Masaru (Nihon Univ., Chiba (Japan). Dept. of Industrial Chemistry); Kojima, Kazuo (Nihon Univ., Tokyo (Japan). Dept. of Industrial Chemistry)

1994-10-01T23:59:59.000Z

169

Vapor deposition of thin films  

DOE Patents [OSTI]

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

1992-01-01T23:59:59.000Z

170

VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA  

E-Print Network [OSTI]

.B. Department of Chemistry, Moscow State University, Moscow, 119899, Russia Bonnell D.W., Hastie J.W. National temperature chemistry situations, vapor pressures are typically less than 100 kPa. The molar volume is p = 101325 Pa). The subscript trs denotes that the changeisfor a transition, typically sublimation

Rudnyi, Evgenii B.

171

Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films  

SciTech Connect (OSTI)

A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni{sub 50}Mn{sub 32}Sn{sub 18} thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

Behler, Anna [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany) [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Department of Physics, Institute for Solid State Physics, Dresden University of Technology, 01062 Dresden (Germany); Teichert, Niclas; Auge, Alexander; Hütten, Andreas [Department of Physics, Thin Films and Physics of Nanostructures, Bielefeld University, 33501 Bielefeld (Germany)] [Department of Physics, Thin Films and Physics of Nanostructures, Bielefeld University, 33501 Bielefeld (Germany); Dutta, Biswanath; Hickel, Tilmann [Max-Planck Institut für Eisenforschung, 40237 Düsseldorf (Germany)] [Max-Planck Institut für Eisenforschung, 40237 Düsseldorf (Germany); Waske, Anja [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany)] [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Eckert, Jürgen [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany) [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Institute of Materials Science, Dresden University of Technology, 01062 Dresden (Germany)

2013-12-15T23:59:59.000Z

172

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

173

Hydrogen Cars and Water Vapor  

E-Print Network [OSTI]

misidentified as "zero-emissions vehicles." Fuel cell vehicles emit water vapor. A global fleet could have, with discernible effects on people and ecosystems. The broad environmental effects of fuel cell vehicles. This cycle is currently under way with hydrogen fuel cells. As fuel cell cars are suggested as a solution

Colorado at Boulder, University of

174

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study  

SciTech Connect (OSTI)

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

2013-12-23T23:59:59.000Z

175

Self-doping effects in epitaxially grown graphene  

E-Print Network [OSTI]

The electronic properties of graphene, Rev. Mod. Phys. (inE?ects in Epitaxially-Grown Graphene D.A. Siegel, 1, 2 S.Y.2009) Abstract Self-doping in graphene has been studied by

Siegel, David A.

2009-01-01T23:59:59.000Z

176

Growth of epitaxial thin films by pulsed laser ablation  

SciTech Connect (OSTI)

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

Lowndes, D.H.

1992-10-01T23:59:59.000Z

177

Growth of epitaxial thin films by pulsed laser ablation  

SciTech Connect (OSTI)

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

Lowndes, D.H.

1992-01-01T23:59:59.000Z

178

Desorption efficiencies of toluene and n-butanol in an organic vapor monitor  

E-Print Network [OSTI]

) ~ ~ ? Experimental Volume versus Theoretical Volume for n-Butanol (liquid phase). . . . . . . 13. Conceptual Adsorption of Vapor Molecules;. . . . 41 IXI'RODDCTI 019 In 1970, the Occupational Safety and Health Adminj- strstion adopted permissible human exposure...&jards has become one of the most important industrial hygiene f unct i one e The levei of exposure to many organic vapor;=, is det r- mined by co' lecting the chemical on some type o solid sor- bent. Of the various adsorbents available {silica gel...

Heaney, Mary Ann

1979-01-01T23:59:59.000Z

179

Vapor canister heater for evaporative emissions systems  

SciTech Connect (OSTI)

Automotive evaporative emissions systems use a charcoal canister to store evaporative hydrocarobn emissions. These stored vapors are later purged and burned during engine operation. Under certain conditions the engine cannot completely purge the canister of the stored fuel vapors, which results in a decreased vapor storage capacity in the canister. A self-regulating PTC (Positive Temperature Coefficient) heater has been developed to warm the purge air as it enters the canister, in order to provide thermal energy for increased release of the vapors from charcoal sites. This paper describes the construction and operation of the vapor canister heater as it relates to improved evaporative emission system performance.

Bishop, R.P.; Berg, P.G.

1987-01-01T23:59:59.000Z

180

Pulsed laser ablation growth and doping of epitaxial compound semiconductor films  

SciTech Connect (OSTI)

Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B. [Oak Ridge National Lab., TN (United States). Solid State Div.; Puretzky, A.A. [Inst. of Spectroscopy, Troitsk (Russian Federation); Strauss, M.A.; Pedraza, A.J.; Park, J.W. [Univ. of Tennessee, Knoxville, TN (United States)

1995-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization  

SciTech Connect (OSTI)

Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (?135 emu cm{sup ?3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup ?4}. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

Onbasli, M. C., E-mail: onbasli@mit.edu; Kim, D. H.; Ross, C. A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Kehlberger, A. [Institute of Physics, Johannes Gutenberg-University of Mainz, 55099 Mainz (Germany); Graduate School Materials Science in Mainz, Staudinger Weg 9, 55128 Mainz (Germany); Jakob, G.; Kläui, M. [Institute of Physics, Johannes Gutenberg-University of Mainz, 55099 Mainz (Germany); Chumak, A. V.; Hillebrands, B. [Fachbereich Physik and Landesforschungszentrum, OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

2014-10-01T23:59:59.000Z

182

Vapor-liquid equilibria for the systems difluoromethane + hydrogen fluoride, dichlorodifluoromethane + hydrogen fluoride, and chlorine + hydrogen fluoride  

SciTech Connect (OSTI)

Isothermal vapor-liquid equilibria for difluoromethane + hydrogen fluoride, dichlorodifluoromethane + hydrogen fluoride, and chlorine + hydrogen fluoride have been measured. The experimental data for the binary systems are correlated with the NRTL equation with the vapor-phase association model for the mixtures containing hydrogen fluoride, and the relevant parameters are presented. The binary system difluoromethane + hydrogen fluoride forms a homogeneous liquid phase, and the others form minimum boiling heterogeneous azeotropes at the experimental conditions.

Kang, Y.W. [KIST, Seoul (Korea, Republic of). Div. of Environmental and CFC Technology] [KIST, Seoul (Korea, Republic of). Div. of Environmental and CFC Technology

1998-01-01T23:59:59.000Z

183

Defect Structure of Epitaxial CrxV1 ? x Thin Films on MgO(001)  

SciTech Connect (OSTI)

Epitaxial thin films of CrxV1-x over the entire composition range were deposited on MgO(001) by molecular beam epitaxy. The films exhibited the expected 45° in-plane rotation with no evidence of phase segregation or spinodal decomposition. Pure Cr, with the largest lattice mismatch to MgO, exhibited full relaxation and cubic lattice parameters. As the lattice mismatch decreased with alloy composition, residual epitaxial strain was observed. For 0.2 ? x ? 0.4 the films were coherently strained to the substrate with associated tetragonal distortion; near the lattice-matched composition of x = 0.33, the films exhibited strain-free pseudomorphic matching to MgO. Unusually, films on the Cr-rich side of the lattice-matched composition exhibited more in-plane compression than expected from the bulk lattice parameters; this result was confirmed with both x-ray diffraction and Rutherford backscattering spectrometry channeling measurements. Although thermal expansion mismatch in the heterostructure may play a role, the dominant mechanism for this phenomenon is still unknown. High resolution transmission electron microscopy was utilized to characterize the misfit dislocation network present at the film/MgO interface. Dislocations were found to be present with a non-uniform distribution, which is attributed to the Volmer-Weber growth mode of the films. The CrxV1-x / MgO(001) system can serve as a model system to study both the fundamentals of defect formation in bcc films and the interplay between nanoscale defects such as dislocations and radiation damage.

Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.; Shutthanandan, V.; Manandhar, Sandeep; Van Ginhoven, Renee M.; Wirth, Brian D.; Kurtz, Richard J.

2014-01-01T23:59:59.000Z

184

Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films  

E-Print Network [OSTI]

Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films Principal-property relationships of well- defined epitaxial tungsten trioxide (WO3) films with and without dopants, and thereby

185

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111) Surfaces . Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111)...

186

Piloting epitaxy with ellipsometry as an in-situ sensor technology  

E-Print Network [OSTI]

Epitaxial processes are deposition processes that produce crystalline films with nano-scale precision. Many compound semiconductor devices rely on epitaxy to produce high-quality crystalline films with a specified compositional ...

Warnick, Sean C. (Sean Charles)

2003-01-01T23:59:59.000Z

187

Control of flow through a vapor generator  

DOE Patents [OSTI]

In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

Radcliff, Thomas D.

2005-11-08T23:59:59.000Z

188

Wick for metal vapor laser  

DOE Patents [OSTI]

An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

Duncan, David B. (Livermore, CA)

1992-01-01T23:59:59.000Z

189

Overview of chemical vapor infiltration  

SciTech Connect (OSTI)

Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

1993-06-01T23:59:59.000Z

190

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

191

Reflux condensation of pure vapors with and without a noncondensable gas inside plain and enhanced tubes  

SciTech Connect (OSTI)

Estimates of the surface-area and vapor-release reductions are obtained when commercially available enhanced tubes (spirally ribbed) replace plain tubes in a reflux unit condensing pure organic vapors with different concentrations of a noncondensable gas. This investigation was undertaken because there are no existing data and/or prediction methods that are applicable for these shell-and-tube condensers commonly used in the process industries. To obtain these estimates, existing design methods published in the open literature were used. The major findings are that (1) surface-area reductions can almost approach the single-phase heat transfer enhancement level, and (2) vapor-release reductions can approach a factor of four. The important implication is that enhanced tubes appear to be very cost effective for addressing the recovery of volatile organic vapors (VOCs), and for a vast number of different reflux-condenser applications.

Abdelmessih, A.N. [Seattle Univ., WA (United States); Rabas, T.J.; Panchal, C.B. [Argonne National Lab., IL (United States)

1997-06-01T23:59:59.000Z

192

Near real time vapor detection and enhancement using aerosol adsorption  

SciTech Connect (OSTI)

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J.; Johnson, Stanley A.

1997-12-01T23:59:59.000Z

193

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

Novick, V.J.; Johnson, S.A.

1999-08-03T23:59:59.000Z

194

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J. (Downers Grove, IL); Johnson, Stanley A. (Countryside, IL)

1999-01-01T23:59:59.000Z

195

Structure and features of the surface morphology of A{sup 4}B{sup 6} chalcogenide epitaxial films  

SciTech Connect (OSTI)

The structure and features of the surface morphology of Pb{sub 1-x}Mn{sub x}Se (x = 0.03) epitaxial films grown on freshly cleaved BaF{sub 2}(111) faces and PbSe{sub 1-x}S{sub x}(100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A{sup 4}B{sup 6}:Pb (S, Se, Te); Pb{sub 1-x}Sn{sub x} (S, Se, Te); and Pb{sub 1-x}Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A{sup 4}B{sup 6} chalcogenides.

Nuriyev, I. R., E-mail: afinnazarov@yahoo.com [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2009-12-15T23:59:59.000Z

196

Growth and Characterization of Epitaxial Oxide Thin Films  

E-Print Network [OSTI]

out during past three years has been published as follows: 1. A. Garg, J. A. Leake, and Z. H. Barber, Epitaxial Growth of WO3 Films on SrTiO3 and R- Sapphire, J. Phys.: D, Appl. Phys., 33 (9), 1048 (2000) 2. A. Garg, S. Dunn, and Z. H. Barber, Growth... of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS...

Garg, Ashish

197

Tropospheric water vapor and climate sensitivity  

SciTech Connect (OSTI)

Estimates are made of the effect of changes in tropospheric water vapor on the climate sensitivity to doubled carbon dioxide (CO{sub 2}) using a coarse resolution atmospheric general circulation model coupled to a slab mixed layer ocean. The sensitivity of the model to doubled CO{sub 2} is found as the difference between the equilibrium responses for control and doubled CO{sub 2} cases. Clouds are specified to isolate the water vapor feedback. Experiments in which the water vapor distribution is specified rather than internally calculated are used to find the contribution of water vapor in various layers and latitude belts to the sensitivity. The contribution of water vapor in layers of equal mass to the climate sensitivity varies by about a factor of 2 with height, with the largest contribution coming from layers between 450 and 750 mb, and the smallest from layers above 230 mb. The positive feedback on the global mean surface temperature response to doubled CO{sub 2} from water vapor above 750 mb is about 2.6 times as large as that from water vapor below 750 mb. The feedback on global mean surface temperature due to water vapor in the extratropical free troposphere is about 50% larger than the feedback due to the lower-latitude free troposphere water vapor. Several important sources of nonlinearity of the radiative heating rates were identified in the process of constructing the specified cloud and water vapor fields. These are (1) the interaction of clouds and solar radiation, which produces much more reflection of solar radiation for time mean clouds than for the instantaneous clouds; (2) the correlation of clouds and water vapor, which produces less downward longwave radiation at the ground for correlated clouds and water vapor than when these fields are independent; and (3) the interaction of water vapor with long wave radiation, which produces less downward longwave radiation at the ground of the average over instantaneous water vapor distributions than of the time mean water vapor distribution.

Schneider, E.K.; Kirtman, B.P.; Lindzen, R.S. [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)] [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)

1999-06-01T23:59:59.000Z

198

Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection  

SciTech Connect (OSTI)

Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

Lai, Y. H.; He, Q. L. [Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China) [Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Cheung, W. Y.; Lok, S. K.; Wong, K. S.; Sou, I. K. [Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China)] [Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Ho, S. K. [Faculty of Science and Technology, University of Macau, Macau, People's Republic of China (China)] [Faculty of Science and Technology, University of Macau, Macau, People's Republic of China (China); Tam, K. W. [Department of Electrical and Electronics Engineering, University of Macau, Macau, People's Republic of China (China)] [Department of Electrical and Electronics Engineering, University of Macau, Macau, People's Republic of China (China)

2013-04-29T23:59:59.000Z

199

Low Frequency Acoustic Resonance Studies of the Liquid-Vapor Transition in Silica Aerogel  

E-Print Network [OSTI]

Fluid phase transitions in porous media are a powerful probe of the effect of confinement and disorder on phase transitions. Aerogel may provide a model system in which to study the effect of dilute impurities on a variety of phase transitions. In this paper we present a series of low frequency acoustic experiments on the effect of aerogel on the liquid-vapor phase transition. Acoustic resonators were used to study the liquid-vapor transition in two fluids (helium and neon) and in two different porosity aerogels (95% and 98%). While effective coexistence curves could be mapped out, the transition was sometimes difficult to pinpoint, leading to doubt as to whether this transition can be treated as an equilibrium macroscopic phase transition at all.

Tobias Herman; John Beamish

2005-06-30T23:59:59.000Z

200

Quantitative organic vapor-particle sampler  

DOE Patents [OSTI]

A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

LNG fire and vapor control system technologies  

SciTech Connect (OSTI)

This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

1982-06-01T23:59:59.000Z

202

Reduced gravity rankine cycle design and optimization with passive vortex phase separation  

E-Print Network [OSTI]

. Potential drawbacks to the technology in a reduced gravity environment include two-phase fluid management processes such as liquid-vapor phase separation. The most critical location for phase separation is at the boiler exit where only vapor must be sent...

Supak, Kevin Robert

2009-05-15T23:59:59.000Z

203

HANFORD CHEMICAL VAPORS WORKER CONCERNS & EXPOSURE EVALUATION  

SciTech Connect (OSTI)

Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank headspaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns. risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits-(OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors.

ANDERSON, T.J.

2006-12-20T23:59:59.000Z

204

Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature  

SciTech Connect (OSTI)

The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications.

Iikawa, F.; Brasil, M.J.S.P.; Couto, O.D.D.; Adriano, C.; Giles, C.; Daeweritz, L. [Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970 (Brazil); Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970, Brazil and Laboratorio Nacional de Luz Sincrotron, CP-6192, 13084-971 Campinas-SP (Brazil); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2004-09-20T23:59:59.000Z

205

Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics  

SciTech Connect (OSTI)

Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

Egorov, A. Yu., E-mail: Anton@beam.ioffe.ru; Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation); Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2014-12-15T23:59:59.000Z

206

Cantilever Epitaxy Process Wins R&D 100 Award  

Broader source: Energy.gov [DOE]

Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

207

Organic lateral heterojunction devices for vapor-phase chemical detection  

E-Print Network [OSTI]

As the U.S. is engaged in battle overseas, there is an urgent need for the development of sensors for early warning and protection of military forces against potential attacks. On the battlefields, improvised explosive ...

Ho, John C., 1980-

2009-01-01T23:59:59.000Z

208

MODELLING AND SIMULATION OF LIQUID-VAPOR PHASE TRANSITION  

E-Print Network [OSTI]

Generator Turbine Generator Cooling Tower Condenser Cooling Water Pump Reactor Core Reactor Vessel Control and Steam (secondary loop) Water (cooling loop) Pump Steam Generator Turbine Generator Cooling Tower Water pressurized (primary loop) Water and Steam (secondary loop) Water (cooling loop) Pump Steam

Faccanoni, Gloria

209

Quantitative Infrared Intensity Studies of Vapor-Phase  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -

210

Water Vapor Radiometry : Outline of Goals and Tasks for the Spring Semester 2001  

E-Print Network [OSTI]

that can accu­ rately measure the spectrum of the water vapor emis­ sion. The current receivers follow, as in a conventional re­ ceiver, the correlation receiver splits the rf signal into two with a splitter that follows the feed horn. Both branches are mixed with a carefully controlled ther­ mal load. A 180 ffi phase shift

Backer, Don

211

Capillary waves and the inherent density profile for the liquid-vapor interface  

E-Print Network [OSTI]

. This approach in turn allows: (1) identification of an "outermost layer" of particles on the liquid. (2). is a nonmonotonic function of normal distance through the interface. and is expected to reflect the diverging bulk distribution for the system in a state of liquid-vapor phase coexistence. This leads to identification

Stillinger, Frank

212

Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air  

E-Print Network [OSTI]

Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air, Si4O4(CH3)8) widely used as additives in personal care products. In both photocopiers and air in indoor air, the gas-phase processes limit the rate of deposition. KEY WORDS: Corona plasma; corona

Chen, Junhong

213

Organic Thin-Film Transistors for Selective Hydrogen Peroxide and Organic Peroxide Vapor Detection  

E-Print Network [OSTI]

. The mobility changes are reversible under dry air flow, whereas positive threshold voltage shifts are reversed reactive products and increasing fixed positive charge. 1. INTRODUCTION Detection of vapor-phase hydrogen they can be prepared from readily available chemicals.4,5 Environmental monitoring of organic peroxides

Kummel, Andrew C.

214

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth  

DOE Patents [OSTI]

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2013-02-19T23:59:59.000Z

215

Vapor-liquid equilibria of coal-derived liquids; 3: Binary systems with tetralin at 200 mmHg  

SciTech Connect (OSTI)

Isobaric vapor-liquid equilibrium data are reported for binary systems of tetralin with p-xylene, [gamma]-picoline, piperidine, and pyridine; all systems were measured at 26.66 kPa (200 mmHg) with a recirculation still. Liquid-phase activity coefficients were correlated using the Van Laar, Wilson, NRTL, and UNIQUAC equations. Vapor-phase nonidealities were found negligible under the experimental conditions of this work, and deviations of the liquid phase from the ideal behavior, as described by Raoult's law, were found to be slightly positive for all the systems.

Blanco, B.; Beltran, S.; Cabezas, J.L. (University Coll., Burgos (Spain). Dept. of Chemical Engineering); Coca, J. (Univ. of Oviedo (Spain). Dept. of Chemical Engineering)

1994-01-01T23:59:59.000Z

216

Epitaxial growth of BaTiO3 thin films at 600 C by metalorganic chemical vapor deposition  

E-Print Network [OSTI]

with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry processes include deposition over large areas, high throughput, and uniform coverage of nonplanar shapes by a plasma-enhanced MOCVD pro- cess. It is not known if the added energy from the plasma generates structural

Wang, Zhong L.

217

Diameter-Controlled Vapor-Solid Epitaxial Growth and Properties of Aligned ZnO Nanowire Arrays  

E-Print Network [OSTI]

. Introduction Wurtzitic zinc oxide is a direct, wide band gap semiconductor that has attracted tremendous (ultraviolet or green/blue) electro-optical devices, chemical sensors, and varistors.1-5 In recent years oxide, so their commercial potential has been limited. Here we report a facile, template-free method

Qin, Lu-Chang

218

Chemical vapor deposition of functionalized isobenzofuran polymers  

E-Print Network [OSTI]

This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

Olsson, Ylva Kristina

2007-01-01T23:59:59.000Z

219

Chemical vapor deposition of antimicrobial polymer coatings  

E-Print Network [OSTI]

There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers ...

Martin, Tyler Philip, 1977-

2007-01-01T23:59:59.000Z

220

Isothermal vapor-liquid equilibria for 2-methyl-2-butanol + 2-methyl-1-butanol + 1-pentanol  

SciTech Connect (OSTI)

Vapor-liquid equilibria (VLE) for 2-methyl-2-butanol + 2-methyl-1-butanol and 2-methyl-2-butanol + 2-methyl-1-butanol + 1-pentanol have been measured at 373.15 K. The binary VLE results have been correlated by different liquid-phase activity coefficient models. The binary interaction parameters obtained from Wilson, NRTL, and UNIQUAC models in this and a previously study are used to predict the VLE data for the ternary system. Vapor-liquid equilibrium (VLE) data are necessary for the design of distillation processes.

Aucejo, A.; Burguet, M.C.; Monton, J.B.; Munoz, R.; Sanchotello, M.; Vazquez, M.I. (Univ. of Valencia (Spain). Dept. de Ingenieria Quimica)

1994-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Optical monitor for water vapor concentration  

DOE Patents [OSTI]

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

Kebabian, Paul (Acton, MA)

1998-01-01T23:59:59.000Z

222

The importance of snow scavenging of polychlorinated biphenyl and polycyclic aromatic hydrocarbon vapors  

SciTech Connect (OSTI)

Recently, experimental data on the scavenging of polychlorinated biphenyls (PCBs) and polycyclic aromatic hydrocarbons (PAHs) from the atmosphere by snow were interpreted assuming that the distribution of chemical between particles and dissolved phase measured in the meltwater reflects the state of the chemical during the scavenging process. A consequence of this assumption is that vapor scavenging is found to be unimportant relative to particle scavenging. An alternative interpretation is presented that during melting repartitioning occurs from the dissolved phase to the particle-sorbed phase. Further, it is argued that a constant particle scavenging ratio may apply to all chemicals of the same class in the same precipitation event, and its value can be estimated from the scavenging characteristics of predominantly particle-sorbed, high molecular mass chemicals. This analysis suggests that for more volatile PCBs and PAHs vapor scavenging is an important, if not the dominating, snow scavenging process. Gas scavenging ratios obtained with this method are, as expected, negatively correlated with the vapor pressure of a substance, indicating that adsorption to the air-ice interface is the process responsible for vapor scavenging.

Wania, F. [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada)] [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada); Mackay, D. [Trent Univ., Peterborough, Ontario (Canada). Environmental and Resource Studies] [Trent Univ., Peterborough, Ontario (Canada). Environmental and Resource Studies; Hoff, J.T. [Univ. of Waterloo, Ontario (Canada). Dept. of Earth Science] [Univ. of Waterloo, Ontario (Canada). Dept. of Earth Science

1999-01-01T23:59:59.000Z

223

Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom  

DOE Patents [OSTI]

A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

Goyal, Amit

2013-07-09T23:59:59.000Z

224

Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom  

DOE Patents [OSTI]

A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

Goyal, Amit (Knoxville, TN)

2012-07-24T23:59:59.000Z

225

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process  

DOE Patents [OSTI]

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

226

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids  

E-Print Network [OSTI]

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids Joe A. Wilson and James S. Chickos* Department of Chemistry and Biochemistry, University of MissouriSt. Louis, St. Louis, Missouri 63121, United States *S Supporting Information ABSTRACT: Sublimation enthalpies

Chickos, James S.

227

Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas Chromatography  

E-Print Network [OSTI]

Chromatography Chase Gobble and James Chickos* Department of Chemistry and Biochemistry University of Missouri-St. Louis, St. Louis Missouri 63121, United States Sergey P. Verevkin Department of Physical Chemistry: Experimental vapor pressures, vaporization, fusion and sublimation enthalpies of a number of dialkyl

Chickos, James S.

228

Giant magnetoresistive structures based on CrO{sub 2} with epitaxial RuO{sub 2} as the spacer layer  

SciTech Connect (OSTI)

Epitaxial ruthenium dioxide (RuO{sub 2})/chromium dioxide(CrO{sub 2}) thin film heterostructures have been grown on (100)-TiO{sub 2} substrates by chemical vapor deposition. Both current-in-plane (CIP) and current-perpendicular-to-plane (CPP) giant magnetoresistive stacks were fabricated with either Co or another epitaxial CrO{sub 2} layer as the top electrode. The Cr{sub 2}O{sub 3} barrier, which forms naturally on CrO{sub 2} surfaces, is no longer present after the RuO{sub 2} deposition, resulting in a highly conductive interface that has a resistance at least four orders of magnitude lower. However, only very limited magnetoresistance (MR) was observed. Such low MR is due to the appearance of a chemically and magnetically disordered layer at the CrO{sub 2} and RuO{sub 2} interfaces when Cr{sub 2}O{sub 3} is transformed into rutile structures during its intermixing with RuO{sub 2}.

Miao, G.X.; Gupta, A.; Sims, H.; Butler, W.H.; Ghosh, S.; Xiao Gang [Physics Department, Brown University, Providence, Rhode Island 02912 (United States); Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Department of Electrical and Computer Engineering, University of Illinois, Chicago, Illinois 60607 (United States); Physics Department, Brown University, Providence, Rhode Island 02912 (United States)

2005-05-15T23:59:59.000Z

229

Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions: The driving force for creating new structures with integrated functionality  

SciTech Connect (OSTI)

Here, we report detailed strain mapping analysis at heterointerfaces of a new multiferroic complex oxide Bi{sub 3}Fe{sub 2}Mn{sub 2}O{sub x}(BFMO322) supercell and related layered structures. The state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and the modified geometric phase analysis (GPA) have been used to characterize the self-assembled transitional layers, misfit defects, and, in particular, the biaxial lattice strain distributions. We found that not only a sufficient lattice misfit is required through substrate selection and to be preserved in initial coherent epilayer growth, but also an appropriate interfacial reconstruction is crucial for triggering the growth of the new BFMO322 supercell structure. The observation of new transitional interfacial phases behaving like coherent film layers within the critical thickness challenges the conventional understanding in existing epitaxial growth model.

Zhu, Yuanyuan; Zhang, Wenrui [Program of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States); Zhou, Honghui; Narayan, Jagdish [Department of Materials Science and Engineering, NSF Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, North Carolina 27695 (United States); MacManus-Driscoll, Judith L. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Jia, Quanxi [Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Program of Materials Science and Engineering, Texas A and M University, College Station, Texas 77843 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843 (United States)

2013-11-01T23:59:59.000Z

230

Vapor scavenging by atmospheric aerosol particles  

SciTech Connect (OSTI)

Particle growth due to vapor scavenging was studied using both experimental and computational techniques. Vapor scavenging by particles is an important physical process in the atmosphere because it can result in changes to particle properties (e.g., size, shape, composition, and activity) and, thus, influence atmospheric phenomena in which particles play a role, such as cloud formation and long range transport. The influence of organic vapor on the evolution of a particle mass size distribution was investigated using a modified version of MAEROS (a multicomponent aerosol dynamics code). The modeling study attempted to identify the sources of organic aerosol observed by Novakov and Penner (1993) in a field study in Puerto Rico. Experimentally, vapor scavenging and particle growth were investigated using two techniques. The influence of the presence of organic vapor on the particle`s hydroscopicity was investigated using an electrodynamic balance. The charge on a particle was investigated theoretically and experimentally. A prototype apparatus--the refractive index thermal diffusion chamber (RITDC)--was developed to study multiple particles in the same environment at the same time.

Andrews, E.

1996-05-01T23:59:59.000Z

231

Band Offsets at the Epitaxial Anatase TiO2/n-SrTiO3(001) Interface...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to measure valence band offsets at the epitaxial anatase TiO2(002)n-SrTiO3(001) heterojunction prepared by molecular beam epitaxy, Within experimental error, the valance band...

232

X-ray Microdiffraction from ?-Ti0.04Fe1.96O3 (0001) Epitaxial...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(0001) Epitaxial Film Grown Over ?-Cr2O3 Buffer Layer Boundary. X-ray Microdiffraction from ?-Ti0.04Fe1.96O3 (0001) Epitaxial Film Grown Over...

233

Micro and nanostructured surfaces for enhanced phase change heat transfer  

E-Print Network [OSTI]

Two-phase microchannel heat sinks are of significant interest for thermal management applications, where the latent heat of vaporization offers an efficient method to dissipate large heat fluxes in a compact device. However, ...

Chu, Kuang-Han, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

234

Design of a microbreather for two-phase microchannel devices  

E-Print Network [OSTI]

Multiphase flows in microchannels are encountered in a variety of microfluidic applications. Two-phase microchannel heat sinks leverage the latent heat of vaporization to offer an efficient method of dissipating large heat ...

Alexander, Brentan R

2008-01-01T23:59:59.000Z

235

Gas phase 129Xe NMR imaging and spectroscopy  

E-Print Network [OSTI]

5 l l Dynamic NMR microscopy of gas phase Poiseuille flowmetal vapors and noble gases can be used to efficientlypolarize the nuclei ofthe noble-gas atoms. As a result, the

Kaiser, Lana G.

2010-01-01T23:59:59.000Z

236

Phase Equilibria Bibliography Updated 6/04 PUBLICATIONS (REFEREED)  

E-Print Network [OSTI]

.G., and Howat, C.S., 1990. Vapor-Liquid Phase Equilibria and Molar Volumes of the Butadiene-Acetonitrile System-Butane and Acetonitrile, 1-Butene and Acetonitrile and 1,3-Butadiene and Acetonitrile. 7th International Congress

Howat, Colin S. "Chip"

237

Modeling studies of heat transfer and phase distribution in two-phase geothermal reservoirs  

SciTech Connect (OSTI)

Phase distribution as well as mass flow and heat transfer behavior in two-phase geothermal systems have been studied by numerical modeling. A two-dimensional porous-slab model was used with a non-uniform heat flux boundary conditions at the bottom. Steady-state solutions are obtained for the phase distribution and heat transfer behavior for cases with different mass of fluid (gas saturation) in place, permeabilities, and capillary pressures. The results obtained show very efficient heat transfer in the vapor-dominated zone due to the development of heat pipes and near-uniform saturations. The phase distribution below the vapor-dominated zone depends on permeability. For relatively high-permeability systems, single-phase liquid zones prevail, with convection providing the energy throughput. For lower permeability systems, a two-phase liquid-dominated zone develops, because single-phase liquid convection is not sufficient to dissipate heat released from the source. These results are consistent with observations from the field, where most high-temperature liquid-dominated two-phase systems have relatively low permeabilities e.g. Krafla, Iceland; Kenya; Baca, New Mexico. The numerical results obtained also show that for high heat flow a high-temperature single-phase vapor zone can develop below a typical (240 C) vapor-dominated zone, as has recently been found at the Geysers, California, and Larderello, Italy.

Lai, C.H.; Bodvarsson, G.S.; Truesdell, A.H. (Lawrence Berkeley Lab., CA (United States). Earth Sciences Div.)

1994-02-01T23:59:59.000Z

238

Vapor characterization of Tank 241-C-103  

SciTech Connect (OSTI)

The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

1994-06-01T23:59:59.000Z

239

Method and Apparatus for Concentrating Vapors for Analysis  

DOE Patents [OSTI]

An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

2008-10-07T23:59:59.000Z

240

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy  

SciTech Connect (OSTI)

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Thermal electric vapor trap arrangement and method  

DOE Patents [OSTI]

A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

Alger, T.

1988-03-15T23:59:59.000Z

242

Small epitaxial graphene devices for magnetosensing applications V. Panchal, K. Cedergren, R. Yakimova, A. Tzalenchuk, S. Kubatkin et al.  

E-Print Network [OSTI]

Small epitaxial graphene devices for magnetosensing applications V. Panchal, K. Cedergren, R://jap.aip.org/about/rights_and_permissions #12;Small epitaxial graphene devices for magnetosensing applications V. Panchal,1,2 K. Cedergren,3 R from 0.5 to 20.0 lm have been fabricated out of a monolayer graphene epitaxially grown on Si

Sheldon, Nathan D.

243

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar  

E-Print Network [OSTI]

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar¿ Sputter Etched and UPS were used to study epitaxial TiN 001 layers grown in situ which were Ar sputter etched. The films Host Material: epitaxial TiN(001) thin film sputter etched Instrument: Physical Electronics, Inc. 5400

Gall, Daniel

244

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

245

Self-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy  

E-Print Network [OSTI]

investigated on the epitaxy and self- organization of laterally nanostructured transition metal TM silicideSelf-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy L to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots

Ortega, Enrique

246

A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN,,001...  

E-Print Network [OSTI]

A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN,,001... After ,,1... UHV spectra from epitaxial B1-NaCl-structure TiN 001 layers grown on MgO 001 1 1 by ultrahigh vacuum magnetron backscattering spectroscopy RBS . AES spectra were obtained from clean TiN 100 surfaces by cleaving 5- m

Gall, Daniel

247

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

248

Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene Charles Divin,1  

E-Print Network [OSTI]

Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene Dong Sun,1 2010) The substrate-induced charge-density profile in carbon face epitaxial graphene is determined screening length is determined to be one graphene layer, in good agreement with theoretical predictions. DOI

Paris-Sud XI, Université de

249

Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale I. Brihuega,1  

E-Print Network [OSTI]

Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale I. Brihuega,1 P. Mallet in Physical Review Letters 101, 206802 (2008))) Graphene exhibits unconventional two-dimensional electronic and the electronic chirality in epitaxial graphene on SiC(0001) correspond to the ones predicted for ideal graphene

Boyer, Edmond

250

Coherent Control of Ballistic Photocurrents in Multilayer Epitaxial Graphene Using Quantum Interference  

E-Print Network [OSTI]

Coherent Control of Ballistic Photocurrents in Multilayer Epitaxial Graphene Using Quantum report generation of ballistic electric currents in unbiased epitaxial graphene at 300 K via quantum. The transient currents are detected via the emitted terahertz radiation. Because of graphene's special structure

Recanati, Catherine

251

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells  

E-Print Network [OSTI]

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

Paris-Sud XI, Université de

252

Free-Standing Epitaxial Graphene Shriram Shivaraman,* Robert A. Barton, Xun Yu, Jonathan Alden,  

E-Print Network [OSTI]

Free-Standing Epitaxial Graphene Shriram Shivaraman,* Robert A. Barton, Xun Yu, Jonathan Alden to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during

McEuen, Paul L.

253

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

254

Optimization of the tunability of barium strontium titanate films via epitaxial stresses  

E-Print Network [OSTI]

Optimization of the tunability of barium strontium titanate films via epitaxial stresses Z.-G. Ban The tunability of epitaxial barium strontium titanate films is analyzed theoretically using a phenomenological.1063/1.1524310 I. INTRODUCTION Thin films of barium strontium titanate (BaxSr1 xTiO3, BST have long been recognized

Alpay, S. Pamir

255

Vapor-liquid equilibria of binary and ternary mixtures of cyclohexane, 3-methyl-2-butanone, and octane at 101.3 kPa  

SciTech Connect (OSTI)

Vapor-liquid equilibria were measured at 101.3 kPa for the three binary and one ternary mixtures of cyclohexane, 3-methyl-2-butanone, and octane. The isobaric T-x-y data were reported, including an azeotropic point for the binary mixture cyclohexane + 3-methyl-2-butanone. The virial equation of state truncated after the second coefficient was used to calculate the vapor-phase fugacity coefficients. The Tsonopoulos correlation equation was applied to determine the second virial coefficients. Various activity coefficient models of the Wilson, the NRTL, and the UNIQUAC equations were used to correlate the binary experimental vapor-liquid equilibrium results. Optimally-fitted binary parameters of the activity coefficient models were obtained and those parameters of the NRTL model were employed to predict the ternary vapor-liquid equilibria. Satisfactory results were presented for the correlation and prediction of the vapor-liquid equilibrium data on binary and ternary mixtures.

Chen, C.C.; Tang, M.; Chen, Y.P. [National Taiwan Univ., Taipei (Taiwan, Province of China). Dept. of Chemical Engineering] [National Taiwan Univ., Taipei (Taiwan, Province of China). Dept. of Chemical Engineering

1996-05-01T23:59:59.000Z

256

Discrete Boltzmann modeling of liquid-vapor system  

E-Print Network [OSTI]

We further probe the Discrete Boltzmann Modeling(DBM) of the single-component two phase flows or the liquid-vapor system. There are two kinds of nonequilibrium effects in the system. The first is the Mechanical NonEquilibrium(MNE). The second is the Thermodynamic NonEquilibrium(TNE). The MNE is well described in the traditional fluid dynamic theory. The description of TNE resorts to the gas kinetic theory. Since based on the Boltzmann equation, the DBM makes possible to analyze both the MNE and TNE. The TNE is the main discussion of this work. A major purpose of this work is to show that the DBM results can be used to confirm and/or improve the macroscopic modeling of complex system.

Aiguo Xu; Guangcai Zhang; Yanbiao Gan

2014-03-15T23:59:59.000Z

257

Feasibility of UV lasing without inversion in mercury vapor  

E-Print Network [OSTI]

We investigate the feasibility of UV lasing without inversion at a wavelength of $253.7$ nm utilizing interacting dark resonances in mercury vapor. Our theoretical analysis starts with radiation damped optical Bloch equations for all relevant 13 atomic levels. These master equations are generalized by considering technical phase noise of the driving lasers. From the Doppler broadened complex susceptibility we obtain the stationary output power from semiclassical laser theory. The finite overlap of the driving Gaussian laser beams defines an ellipsoidal inhomogeneous gain distribution. Therefore, we evaluate the intra-cavity field inside a ring laser self-consistently with Fourier optics. This analysis confirms the feasibility of UV lasing and reveals its dependence on experimental parameters.

Martin R. Sturm; Benjamin Rein; Thomas Walther; Reinhold Walser

2014-06-27T23:59:59.000Z

258

Graphene growth with giant domains using chemical vapor deposition  

E-Print Network [OSTI]

N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

Yong, Virginia; Hahn, H. Thomas

2011-01-01T23:59:59.000Z

259

Electronic states in epitaxial graphene fabricated on silicon carbide  

SciTech Connect (OSTI)

An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.

Davydov, S. Yu., E-mail: Sergei_Davydov@mail.ru [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-08-15T23:59:59.000Z

260

Strong circular photogalvanic effect in ZnO epitaxial films  

SciTech Connect (OSTI)

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Chen, Y. H.; Chang, K. [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2011-12-23T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Vapor intrusion modeling : limitations, improvements, and value of information analyses  

E-Print Network [OSTI]

Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

Friscia, Jessica M. (Jessica Marie)

2014-01-01T23:59:59.000Z

262

Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)  

SciTech Connect (OSTI)

In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

Not Available

2013-10-01T23:59:59.000Z

263

Desalination Using Vapor-Compression Distillation  

E-Print Network [OSTI]

and MSF, this research investigates a high-efficiency mechanical vapor-compression distillation system that employs an improved water flow arrangement. The incoming salt concentration was 0.15% salt for brackish water and 3.5% salt for seawater, whereas...

Lubis, Mirna R.

2010-07-14T23:59:59.000Z

264

Advancing Explosives Detection Capabilities: Vapor Detection  

ScienceCinema (OSTI)

A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

Atkinson, David

2014-07-24T23:59:59.000Z

265

Chemical vapor deposition of mullite coatings  

DOE Patents [OSTI]

This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

1998-01-01T23:59:59.000Z

266

Microstructure and Mechanics of Superconductor Epitaxy via the Chemical Solution Deposition Method  

SciTech Connect (OSTI)

Executive Summary: Initially the funds were sufficient funds were awarded to support one graduate student and one post-doc. Lange, though other funds, also supported a graduate intern from ETH Zurich, Switzerland for a period of 6 months. The initial direction was to study the chemical solution deposition method to understand the microstructural and mechanical phenomena that currently limit the production of thick film, reliable superconductor wires. The study was focused on producing thicker buffer layer(s) on Ni-alloy substrates produced by the RABiTS method. It focused on the development of the microstructure during epitaxy, and the mechanical phenomena that produce cracks during dip-coating, pyrolysis (decomposition of precursors during heating), crystallization and epitaxy. The initial direction of producing thicker layers of a know buffer layer material was redirected by co-workers at ORNL, in an attempt to epitaxially synthesize a potential buffer layer material, LaMnO3, via the solution route. After a more than a period of 6 months that showed that the LaMnO3 reacted with the Ni-W substrate at temperatures that could produce epitaxy, reviewers at the annual program review strongly recommended that the research was not yielding positive results. The only positive result presented at the meeting was that much thicker films could be produce by incorporating a polymer into the precursor that appeared to increase the precursor’s resistance to crack growth. Thus, to continue the program, the objectives were changed to find compositions with the perovskite structure that would be a) chemically compatible with either the Ni-W RABiTS or the MgO IBAD Ni-alloy substrates, and produce a better lattice parameter fit between either of the two substrates. At the start of the second year, the funding was reduced to 2/3’s of the first year level, which required the termination of the post-doc after approximately 5 months into the second year. From then on, further funding was intermittent to say the least, and funding to support the student and the research expenses has to be supplemented by Lange’s gift funds. During the first part of the second year, strontium zirconate was identified as an alternative to lanthanum manganite as a buffer layer for use on the IBAD MgO superconducting wire. A lattice parameter of 4.101 Angstroms offers a reduced lattice mismatch between the MgO and SrZrO3. Studies were focused on investigating hybrid precursor routes, combining Sr acetate with a number of different Zr alkoxides. Initial results from heat treating precursors to form powders are positive with the formation of orthorhombic SrZrO3 at temperatures between 800°C and 1100°C under a reducing atmosphere of Ar – 5% H2. Buffer layer research on RABiTS substrates were centered on GdAlO3 (3.71 Å) and YAlO3 (3.68 Å) buffer layer materials. Powder experiments in YAlO3 have shown the perovskite phase to be metastable at processing temperatures below 1500 °C. Experiments involving spin coating of YAlO3 precursors have found significant problems involved with wettability of the YAlO3 precursor (Yttrium acetate, Aluminum tri-sec butoxide, DI water and Formic Acid) on RABiTS substrates; this, and the demise of the funds precluded further research using YAlO3. The diminished funds for the second year, and the small, tricked funds during the third year lead to a redirection of the student to another research area., and a stop to any experimental achievements that were much too ambition relative to the available funds. The only positive results obtained during this latter period was the understanding why two dissimilar structures could result in an epitaxial relation. It was shown that two rules of crystal chemistry, cation/anion coordination and charge balance, could be applied to understand the epitaxy of SrTiO3 on Ni c(2 X 2)S, TiO2 (anatase) on LaAlO3, TiO2 (rutile) on r-plane Al2O3, and Zr1-x(Yx)O2 on (0001) Al2O3. This new understanding of the interface between two dissimilar structures has important implications that include the buff

Frederick F. Lange

2006-11-30T23:59:59.000Z

267

FORMATION OF COSMIC CRYSTALS IN HIGHLY SUPERSATURATED SILICATE VAPOR PRODUCED BY PLANETESIMAL BOW SHOCKS  

SciTech Connect (OSTI)

Several lines of evidence suggest that fine silicate crystals observed in primitive meteorite and interplanetary dust particles (IDPs) nucleated in a supersaturated silicate vapor followed by crystalline growth. We investigated evaporation of {mu}m-sized silicate particles heated by a bow shock produced by a planetesimal orbiting in the gas in the early solar nebula and condensation of crystalline silicate from the vapor thus produced. Our numerical simulation of shock-wave heating showed that these {mu}m-sized particles evaporate almost completely when the bow shock is strong enough to cause melting of chondrule precursor dust particles. We found that the silicate vapor cools very rapidly with expansion into the ambient unshocked nebular region; for instance, the cooling rate is estimated to be as high as 2000 K s{sup -1} for a vapor heated by a bow shock associated with a planetesimal of radius 1 km. The rapid cooling of the vapor leads to nonequilibrium gas-phase condensation of dust at temperatures much lower than those expected from the equilibrium condensation. It was found that the condensation temperatures are lower by a few hundred K or more than the equilibrium temperatures. This explains the results of the recent experimental studies of condensation from a silicate vapor that condensation in such large supercooling reproduces morphologies similar to those of silicate crystals found in meteorites. Our results strongly suggest that the planetesimal bow shock is one of the plausible sites for formation of not only chondrules but also other cosmic crystals in the early solar system.

Miura, H.; Yamada, J.; Tsukamoto, K.; Nozawa, J. [Department of Earth Sciences, Tohoku University, Aoba 6-3, Aramaki, Aoba-ku, Sendai 980-8578 (Japan); Tanaka, K. K.; Yamamoto, T. [Institute of Low Temperature Science, Hokkaido University, Sapporo 060-0819 (Japan); Nakamoto, T., E-mail: miurah@m.tohoku.ac.j [Earth and Planetary Sciences, Tokyo Institute of Technology, Meguro, Tokyo 152-8551 (Japan)

2010-08-10T23:59:59.000Z

268

Industrial Heat Pumps Using Solid/Vapor Working Fluids  

E-Print Network [OSTI]

INDUSTRIAL HEAT PUMPS USING SOLID/VAPOR WORKING FLUIDS Uwe Rockenfeller, Desert Research Institute, Boulder City, Nevada ABSTRACT Industrial heat pumps have the potential to reduce the operating costs of chemical and heat treating processes... with vapor re-compression recovery systems. The state-of-the-art heat pump equipment employing liquid/vapor working fluids fulfills the requirements only in some applications. The employment of solid/vapor complex compounds leads to 'nore cost effective...

Rockenfeller, U.

269

Isobaric vapor-liquid equilibria of methanol + 1-octanol and ethanol + 1-octanol mixtures  

SciTech Connect (OSTI)

Isobaric vapor-liquid equilibrium data for methanol + 1-octanol and ethanol + 1-octanol have been measured at 101.325 kPa. The results were checked for thermodynamic consistency using Fredenslund et al.`s test, correlated using Wilson, NRTL, and UNIQUAC equations for the liquid phase activity coefficients, and compared with the predictions of the ASOG, UNIFAC, and modified UNIFAC group contribution methods.

Arce, A.; Blanco, A.; Soto, A.; Tojo, J. [Univ. of Santiago de Compostela (Spain). Chemical Engineering Dept.

1995-07-01T23:59:59.000Z

270

Modeling engine oil vaporization and transport of the oil vapor in the piston ring pack on internal combustion engines  

E-Print Network [OSTI]

A model was developed to study engine oil vaporization and oil vapor transport in the piston ring pack of internal combustion engines. With the assumption that the multi-grade oil can be modeled as a compound of several ...

Cho, Yeunwoo, 1973-

2004-01-01T23:59:59.000Z

271

Apparatus for externally controlled closed-loop feedback digital epitaxy  

DOE Patents [OSTI]

A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 5 figs.

Eres, D.; Sharp, J.W.

1996-07-30T23:59:59.000Z

272

Calculation of Vapor-Liquid-Liquid Equilibria for the Fischer-Tropsch Reactor Effluents using Modified Peng-Robinson  

E-Print Network [OSTI]

Calculation of Vapor-Liquid-Liquid Equilibria for the Fischer- Tropsch Reactor Effluents using ignored the non-ideal phase equilibrium problem of a FT reactor. The rigorous calculation method is based A modified Peng­Robinson equation of state is used to develop the methods for calculating the thermodynamic

Skogestad, Sigurd

273

Isothermal vapor-liquid equilibria for the systems 1-chloro-1,1-difluoroethane + hydrogen fluoride, 1,1-dichloro-1-fluoroethane + hydrogen fluoride, and chlorodifluoromethane + hydrogen fluoride  

SciTech Connect (OSTI)

Isothermal vapor-liquid equilibria for the three binary systems (1-chloro-1,1-difluoroethane + hydrogen fluoride, 1,1-dichloro-1-fluoroethane + hydrogen fluoride, and chlorodifluoromethane + hydrogen fluoride) have been measured. The experimental data for the binary systems are correlated with the NRTL equation with the vapor-phase association model for the mixtures containing hydrogen fluoride, and the relevant parameters are presented. All of the systems form minimum boiling heterogeneous azeotropes.

Kang, Y.W.; Lee, Y.Y. [KIST, Seoul (Korea, Republic of)] [KIST, Seoul (Korea, Republic of)

1997-03-01T23:59:59.000Z

274

Developmental of a Vapor Cloud Explosion Risk Analysis Tool Using Exceedance Methodology  

E-Print Network [OSTI]

cloud explosions [4]. Lenoir and Davenport [5] have presented a review of many major incidents involving vapor cloud explosions worldwide from 1921 to 1991. Hydrocarbon materials such as ethane, ethylene, propane, and butane, which have been involved... are typically either in the form of gas, liquid, or two-phase. Examples of hydrocarbon gas releases are methane through butane, while liquid releases could be crude oil, diesel, jet fuel, or others. An example of a two-phase leak is condensate since it is a...

Alghamdi, Salem

2012-10-19T23:59:59.000Z

275

Apparatus and method for photochemical vapor deposition  

DOE Patents [OSTI]

A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

Jackson, Scott C. (Wilmington, DE); Rocheleau, Richard E. (Wilmington, DE)

1987-03-31T23:59:59.000Z

276

DuPont Chemical Vapor Technical Report  

SciTech Connect (OSTI)

DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH&Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations.

MOORE, T.L.

2003-10-03T23:59:59.000Z

277

Copper vapor laser modular packaging assembly  

DOE Patents [OSTI]

A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

Alger, Terry W. (Tracy, CA); Ault, Earl R. (Dublin, CA); Moses, Edward I. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

278

Heat storage system utilizing phase change materials government rights  

DOE Patents [OSTI]

A thermal energy transport and storage system is provided which includes an evaporator containing a mixture of a first phase change material and a silica powder, and a condenser containing a second phase change material. The silica powder/PCM mixture absorbs heat energy from a source such as a solar collector such that the phase change material forms a vapor which is transported from the evaporator to the condenser, where the second phase change material melts and stores the heat energy, then releases the energy to an environmental space via a heat exchanger. The vapor is condensed to a liquid which is transported back to the evaporator. The system allows the repeated transfer of thermal energy using the heat of vaporization and condensation of the phase change material.

Salyer, Ival O. (Dayton, OH)

2000-09-12T23:59:59.000Z

279

Combined rankine and vapor compression cycles  

DOE Patents [OSTI]

An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

2005-04-19T23:59:59.000Z

280

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Dielectric tunability of ,,110... oriented barium strontium titanate epitaxial films on ,,100... orthorhombic substrates  

E-Print Network [OSTI]

Dielectric tunability of ,,110... oriented barium strontium titanate epitaxial films on ,,100 materials such as barium strontium titanate Ba1-xSrxTiO3 BST have emerged as leading candidates

Alpay, S. Pamir

282

Structure, magnetic properties and magnetoelastic anisotropy in epitaxial Sr(Ti???Co?)O? films  

E-Print Network [OSTI]

We report the structure, magnetic properties and magnetoelastic anisotropy of epitaxial Sr(Ti???Co?)O? films grown on LaAlO? (001) and SrTiO? (001) substrates by pulsed laser deposition. Room temperature ferromagnetism was ...

Bi, Lei

283

E-Print Network 3.0 - atomic layer epitaxy Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the surface of the grown MnSi layer. On the atomic scale, scanning... Epitaxial growth of silicide layers on Si substrates has attracted much attention due to their...

284

Enhanced Magnetism in Epitaxial SrRuO3 Thin Films  

E-Print Network [OSTI]

Enhanced Magnetism in Epitaxial SrRuO 3 A. J. Grutter, 1, 2and their e?ects on magnetism. In this paper we demonstrateXMCD con?rmed that the magnetism originates from the Ru 4+

Grutter, A.J.

2010-01-01T23:59:59.000Z

285

Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications  

E-Print Network [OSTI]

Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

Bai, Yu, Ph.D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

286

Electrocaloric properties of epitaxial strontium titanate films I. B. Misirlioglu,2  

E-Print Network [OSTI]

Electrocaloric properties of epitaxial strontium titanate films J. Zhang,1 I. B. Misirlioglu,2 S. P; published online 1 June 2012) The electrocaloric (EC) response of strontium titanate thin films is computed

Alpay, S. Pamir

287

CHEMISTRY OF IMPACT-GENERATED SILICATE MELT-VAPOR DEBRIS DISKS  

SciTech Connect (OSTI)

In the giant impact theory for lunar origin, the Moon forms from material ejected by the impact into an Earth-orbiting disk. Here we report the initial results from a silicate melt-vapor equilibrium chemistry model for such impact-generated planetary debris disks. In order to simulate the chemical behavior of a two-phase (melt+vapor) disk, we calculate the temperature-dependent pressure and chemical composition of vapor in equilibrium with molten silicate from 2000 to 4000 K. We consider the elements O, Na, K, Fe, Si, Mg, Ca, Al, Ti, and Zn for a range of bulk silicate compositions (Earth, Moon, Mars, eucrite parent body, angrites, and ureilites). In general, the disk atmosphere is dominated by Na, Zn, and O{sub 2} at lower temperatures (<3000 K) and SiO, O{sub 2}, and O at higher temperatures. The high-temperature chemistry is consistent for any silicate melt composition, and we thus expect abundant SiO, O{sub 2}, and O to be a common feature of hot, impact-generated debris disks. In addition, the saturated silicate vapor is highly oxidizing, with oxygen fugacity (f{sub O{sub 2}}) values (and hence H{sub 2}O/H{sub 2} and CO{sub 2}/CO ratios) several orders of magnitude higher than those in a solar-composition gas. High f{sub O{sub 2}} values in the disk atmosphere are found for any silicate composition because oxygen is the most abundant element in rock. We thus expect high oxygen fugacity to be a ubiquitous feature of any silicate melt-vapor disk produced via collisions between rocky planets.

Visscher, Channon [Department of Space Studies, Southwest Research Institute, Boulder, CO 80302 (United States); Fegley, Bruce Jr. [Planetary Chemistry Laboratory, Department of Earth and Planetary Sciences and McDonnell Center for Space Sciences, Washington University in St. Louis, St. Louis, MO 63130 (United States)

2013-04-10T23:59:59.000Z

288

Competitive Growth and Etching of Epitaxial Graphene Lianchang Zhang,*,,  

E-Print Network [OSTI]

, several approaches have been developed, such as micromechanical exfoliation,3 liquid phase exfoliation,4

Zhang, Guangyu

289

Water injection as a means for reducing non-condensible andcorrosive gases in steam produced from vapor-dominated reservoirs  

SciTech Connect (OSTI)

Large-scale water injection at The Geysers, California, hasgenerated substantial benefits in terms of sustaining reservoir pressuresand production rates, as well as improving steam composition by reducingthe content of non-condensible gases (NCGs). Two effects have beenrecognized and discussed in the literature as contributing to improvedsteam composition, (1) boiling of injectate provides a source of "clean"steam to production wells, and (2) pressurization effects induced byboiling of injected water reduce upflow of native steam with large NCGconcentrations from depth. In this paper we focus on a possibleadditional effect that could reduce NCGs in produced steam by dissolutionin a condensed aqueous phase.Boiling of injectate causes pressurizationeffects that will fairly rapidly migrate outward, away from the injectionpoint. Pressure increases will cause an increase in the saturation ofcondensed phase due to vapor adsorption on mineral surfaces, andcapillary condensation in small pores. NCGs will dissolve in theadditional condensed phase which, depending upon their solubility, mayreduce NCG concentrations in residual steam.We have analyzed thepartitioning of HCl between vapor and aqueous phases, and have performednumerical simulations of injection into superheated vapor zones. Oursimulations provide evidence that dissolution in the condensed phase canindeed reduce NCG concentrations in produced steam.

Pruess, Karsten; Spycher, Nicolas; Kneafsey, Timothy J.

2007-01-08T23:59:59.000Z

290

1 Copyright 1999 by ASME MULTI-PHASE CFD ANALYSIS OF NATURAL AND VENTILATED CAVITATION  

E-Print Network [OSTI]

volume fraction transport/generation for liquid, condensable vapor and non-con- densable gas fields between condensable vapor and non-condensable gas, a requirement of our current applica- tion. By solving1 Copyright © 1999 by ASME MULTI-PHASE CFD ANALYSIS OF NATURAL AND VENTILATED CAVITATION ABOUT

Kunz, Robert Francis

291

The Impact of Thermal Conductivity and Diffusion Rates on Water Vapor Transport through Gas Diffusion Layers  

E-Print Network [OSTI]

Water management in a hydrogen polymer electrolyte membrane (PEM) fuel cell is critical for performance. The impact of thermal conductivity and water vapor diffusion coefficients in a gas diffusion layer (GDL) has been studied by a mathematical model. The fraction of product water that is removed in the vapour phase through the GDL as a function of GDL properties and operating conditions has been calculated and discussed. Furthermore, the current model enables identification of conditions when condensation occurs in each GDL component and calculation of temperature gradient across the interface between different layers, providing insight into the overall mechanism of water transport in a given cell design. Water transport mode and condensation conditions in the GDL components depend on the combination of water vapor diffusion coefficients and thermal conductivities of the GDL components. Different types of GDL and water removal scenarios have been identified and related to experimentally-determined GDL proper...

Burlatsky, S F; Gummallaa, M; Condita, D; Liua, F

2013-01-01T23:59:59.000Z

292

Synthesis of alloys with controlled phase structure  

DOE Patents [OSTI]

A method for preparing controlled phase alloys useful for engineering and hydrogen storage applications. This novel method avoids melting the constituents by employing vapor transport, in a hydrogen atmosphere, of an active metal constituent, having a high vapor pressure at temperatures .apprxeq.300 C. and its subsequent condensation on and reaction with the other constituent (substrate) of an alloy thereby forming a controlled phase alloy and preferably a single phase alloy. It is preferred that the substrate material be a metal powder such that diffusion of the active metal constituent, preferably magnesium, and reaction therewith can be completed within a reasonable time and at temperatures .apprxeq.300 C. thereby avoiding undesirable effects such as sintering, local compositional inhomogeneities, segregation, and formation of unwanted second phases such as intermetallic compounds.

Guthrie, Stephen Everett (Livermore, CA); Thomas, George John (Livermore, CA); Bauer, Walter (Livermore, CA); Yang, Nancy Yuan Chi (Lafayette, CA)

1999-04-20T23:59:59.000Z

293

Synthesis of alloys with controlled phase structure  

DOE Patents [OSTI]

A method is described for preparing controlled phase alloys useful for engineering and hydrogen storage applications. This novel method avoids melting the constituents by employing vapor transport, in a hydrogen atmosphere, of an active metal constituent, having a high vapor pressure at temperatures {approx_equal}300 C and its subsequent condensation on and reaction with the other constituent (substrate) of an alloy thereby forming a controlled phase alloy and preferably a single phase alloy. It is preferred that the substrate material be a metal powder such that diffusion of the active metal constituent, preferably magnesium, and reaction therewith can be completed within a reasonable time and at temperatures {approx_equal}300 C thereby avoiding undesirable effects such as sintering, local compositional inhomogeneities, segregation, and formation of unwanted second phases such as intermetallic compounds. 4 figs.

Guthrie, S.E.; Thomas, G.J.; Bauer, W.; Yang, N.Y.C.

1999-04-20T23:59:59.000Z

294

Method and apparatus for concentrating vapors for analysis  

DOE Patents [OSTI]

A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

2012-06-05T23:59:59.000Z

295

Manufacturing Cost Analysis Relevant to Single-and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon (Presentation)  

SciTech Connect (OSTI)

In this analysis we examine the current, mid-term, and long-term manufacturing costs for III-Vs deposited by traditional Metal Organic Vapor Phase Epitaxy (MOVPE).

Woodhouse, M.; Goodrich, A.

2014-05-01T23:59:59.000Z

296

Vapor port and groundwater sampling well  

DOE Patents [OSTI]

A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

1996-01-01T23:59:59.000Z

297

Vapor port and groundwater sampling well  

DOE Patents [OSTI]

A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

Hubbell, J.M.; Wylie, A.H.

1996-01-09T23:59:59.000Z

298

Mercury Vapor (Kooten, 1987) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowellisMcDonald isMelletteEnclosed andEnergySolar SystemsVapor

299

Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} films  

SciTech Connect (OSTI)

Large scale electronic phase separation (EPS) between ferromagnetic metallic and charge-ordered insulating phases in La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} (y = 0.3) (LPCMO) is very sensitive to the structural changes. This work investigates the effects of post-annealing on the strain states and electrical transport properties of LPCMO films epitaxially grown on (001){sub pc} SrTiO{sub 3} (tensile strain), LaAlO{sub 3} (compressive strain) and NdGaO{sub 3} (near-zero strain) substrates. Before annealing, all the films are coherent-epitaxial and insulating through the measured temperature range. Obvious change of film lattice is observed during the post-annealing: the in-plane strain in LPCMO/LAO varies from ?1.5% to ?0.1% while that in LPCMO/STO changes from 1.6% to 1.3%, and the lattice of LPCMO/NGO keeps constant because of the good lattice-match between LPCMO and NGO. Consequently, the varied film strain leads to the emergence of metal-insulator transitions (MIT) and shift of the critical transition temperature in the electrical transport. These results demonstrate that lattice-mismatch combined with post-annealing is an effective approach to tune strain in epitaxial LPCMO films, and thus to control the EPS and MIT in the films.

Hu, Sixia; Wang, Haibo; Dong, Yongqi; Hong, Bing; He, Hao; Bao, Jun [National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026 (China); Huang, Haoliang [CAS Key Laboratory of Materials for Energy Conversion and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yang, Yuanjun; Luo, Zhenlin, E-mail: zlluo@ustc.edu.cn; Yang, Mengmeng; Gao, Chen, E-mail: cgao@ustc.edu.cn [National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026 (China); CAS Key Laboratory of Materials for Energy Conversion and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-06-15T23:59:59.000Z

300

Review of enhanced vapor diffusion in porous media  

SciTech Connect (OSTI)

Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

Webb, S.W.; Ho, C.K.

1998-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Recovery of benzene in an organic vapor monitor  

E-Print Network [OSTI]

solid adsorbents available (silica gel, activated alumina, etc. ), activated charcoal is most frequently utilized. Activated charcoal has retentivity for sorbed vapors several times that of silica gel and it displays a selectivity for organic vapors... (diffusion rate) of the vapor molecules to the sur- face of the adsorbent. The adsorption process determine how effective the adsorbent collects and holds the contam- inant on the surface of the activated charcoal. Recovery of the contaminant from...

Krenek, Gregory Joel

1980-01-01T23:59:59.000Z

302

Vaporizer design criteria for ethanol fueled internal combustion engines  

E-Print Network [OSTI]

. Stout (Member) L r x ge Edwa d A. Hiler (Head of Department) May 1985 ABSTRACT Vaporizer Design Criteria For Ethanol Fueled Internal Combustion Engines. (May 1985) Arachchi Rallage Ariyaratne, B. S. , University of Sri Lanka Chairman... VAPORIZATION LENGTH WITH UNIFORM HEAT FLUX 8 POLYNOMIAL FUNCTIONS FOR EVALUATING PARAMETERS C VARIATION OF HEAT FLUX AND AVERAGE SURFACE TEMPARATURE D PROGRAM FOR PREDICTING VAPORIZATION LENGTH 73 75 78 80 VITA 87 LIST OF TABLES TABLE Page 1...

Ariyaratne, Arachchi Rallage

2012-06-07T23:59:59.000Z

303

Method for controlling corrosion in thermal vapor injection gases  

DOE Patents [OSTI]

An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

Sperry, John S. (Houston, TX); Krajicek, Richard W. (Houston, TX)

1981-01-01T23:59:59.000Z

304

Mercury Vapor At Lassen Volcanic National Park Area (Varekamp...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lassen Volcanic National Park Area (Varekamp & Buseck, 1983) Exploration...

305

GLOBAL OPTIMIZATION FOR THE PHASE AND CHEMICAL EQUILIBRIUM PROBLEM  

E-Print Network [OSTI]

GLOBAL OPTIMIZATION FOR THE PHASE AND CHEMICAL EQUILIBRIUM PROBLEM: APPLICATION TO THE NRTL is adequately modeled by the Non­Random Two Liquid (NRTL) activity coefficient expression and the vapor phase property of the Gibbs free energy expression involving the NRTL equation is provided. It is subsequently

Neumaier, Arnold

306

Electrical Characterization of Layer-Exchange Solid-Phase Epitaxy Si Diode Junctions  

E-Print Network [OSTI]

. The controllability of the growth location and dimensions, practically unchanged when the downscale is reduced nitride (SiNx) spacer technology [14], mature in our research laboratory, has L 408 #12;been used: a 300

Technische Universiteit Delft

307

The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide  

E-Print Network [OSTI]

allows lasing action at or above room temperature. The utility of AI?Ga& ?As is based on the close latti&e match to GaAs over a range of Al mole fraction between zero and one(Fig. 1)IS). This is significant since heterojunctions between s...-type by occupying the site normally orc?pi& d by th& gro?p V element, ar?l acting as a donor. For the p-type of AI?Ga& ?As. %1g was used as an i&np?ri&y. Fig. 10 and Fig. 11 show I he r&'lal ionship bet wc?n th& in&p?r&I& & o???& r?t ?&n??&l t he alorr&i& weight...

Choi, Young-Shig

2012-06-07T23:59:59.000Z

308

Hidden Ferromagnetic Secondary Phases in Cobalt-doped ZnO Epitaxial Thin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Bigfront.jpgcommunity200cellHeatExperiment. | EMSLInformationFilms.

309

Growth and characterization of liquid phase epitaxial GaP layers  

E-Print Network [OSTI]

, and supercooling amount. The results are compared with a diffusion-controlled model predictions for various cooling methods and very good agreements observed. The resistivity and mobility of grown GaP layers at room temperature are studied and the obtained... for further growth. As a result, LPE has the capability of producing multi-layers of controllable composition. The reproducibility of such layers is governed by parameters like: solution concentration, temperature, cooling rate, growth time, and substrate...

Kao, Yung-Chung

2012-06-07T23:59:59.000Z

310

Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andData andFleetEngineering Of Radiation Tolerant SiliconStudied Using

311

Development of a Water Based, Critical Flow, Non-Vapor Compression cooling Cycle  

SciTech Connect (OSTI)

Expansion of a high-pressure liquid refrigerant through the use of a thermostatic expansion valve or other device is commonplace in vapor-compression cycles to regulate the quality and flow rate of the refrigerant entering the evaporator. In vapor-compression systems, as the condensed refrigerant undergoes this expansion, its pressure and temperature drop, and part of the liquid evaporates. We (researchers at Kansas State University) are developing a cooling cycle that instead pumps a high-pressure refrigerant through a supersonic converging-diverging nozzle. As the liquid refrigerant passes through the nozzle, its velocity reaches supersonic (or critical-flow) conditions, substantially decreasing the refrigerant’s pressure. This sharp pressure change vaporizes some of the refrigerant and absorbs heat from the surrounding conditions during this phase change. Due to the design of the nozzle, a shockwave trips the supersonic two-phase refrigerant back to the starting conditions, condensing the remaining vapor. The critical-flow refrigeration cycle would provide space cooling, similar to a chiller, by running a secondary fluid such as water or glycol over one or more nozzles. Rather than utilizing a compressor to raise the pressure of the refrigerant, as in a vapor-cycle system, the critical-flow cycle utilizes a high-pressure pump to drive refrigerant liquid through the cooling cycle. Additionally, the design of the nozzle can be tailored for a given refrigerant, such that environmentally benign substances can act as the working fluid. This refrigeration cycle is still in early-stage development with prototype development several years away. The complex multi-phase flow at supersonic conditions presents numerous challenges to fully understanding and modeling the cycle. With the support of DOE and venture-capital investors, initial research was conducted at PAX Streamline, and later, at Caitin. We (researchers at Kansas State University) have continued development of the cycle and have gained an in-depth understanding of the governing fundamental knowledge, based on the laws of physics and thermodynamics and verified with our testing results. Through this research, we are identifying optimal working fluid and operating conditions to eventually demonstrate the core technology for space cooling or other applications.

Hosni, Mohammad H.

2014-03-30T23:59:59.000Z

312

Vapor and gas sampling of Single-Shell Tank 241-T-111 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data resulting from the January 20, 1995, sampling of SST 241-T-111 using the vapor sampling system.

Caprio, G.S.

1995-09-01T23:59:59.000Z

313

Vapor and gas sampling of single-shell tank 241-BY-112 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data from the November 18, 1994, sampling of SST 241-BY-112 using the vapor sampling system.

Caprio, G.S.

1995-09-20T23:59:59.000Z

314

Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System  

SciTech Connect (OSTI)

This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

Caprio, G.S.

1995-11-01T23:59:59.000Z

315

Gas: A Neglected Phase in Remediation of Metals and Radionuclides  

SciTech Connect (OSTI)

The gas phase is generally ignored in remediation of metals and radionuclides because it is assumed that there is no efficient way to exploit it. In the literal sense, all remediations involve the gas phase because this phase is linked to the liquid and solid phases by vapor pressure and thermodynamic relationships. Remediation methods that specifically use the gas phase as a central feature have primarily targeted volatile organic contaminants, not metals and radionuclides. Unlike many organic contaminants, the vapor pressure and Henry's Law constants of metals and radionuclides are not generally conducive to direct air stripping of dissolved contaminants. Nevertheless, the gas phase can play an important role in remediation of inorganic contaminants and provide opportunities for efficient, cost effective remediation. The objective here is to explore ways in which manipulation of the gas phase can be used to facilitate remediation of metals and radionuclides.

Denham, Miles E.; Looney, Brian B

2005-09-28T23:59:59.000Z

316

Formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

We report the phase formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy. We find the alloy with low- and high-Be contents could be obtained by alloying BeO into ZnO films. X-ray diffraction measurements shows the c lattice constant value shrinks, and room temperature absorption shows the energy band-gap widens after Be incorporated. However, the alloy with intermediate Be composition are unstable and segregated into low- and high-Be contents BeZnO alloys. We demonstrate the phase segregation of Be{sub x}Zn{sub 1-x}O alloys with intermediate Be composition resulted from large internal strain induced by large lattice mismatch between BeO and ZnO.

Chen, Mingming; Zhu, Yuan; Su, Longxing; Zhang, Quanlin; Chen, Anqi; Ji, Xu; Xiang, Rong; Gui, Xuchun; Wu, Tianzhun [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)] [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Pan, Bicai [Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)] [Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Tang, Zikang [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China) [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

2013-05-20T23:59:59.000Z

317

The Water Vapor Abundance in Orion KL Outflows  

E-Print Network [OSTI]

We present the detection and modeling of more than 70 far-IR pure rotational lines of water vapor, including the 18O and 17O isotopologues, towards Orion KL. Observations were performed with the Long Wavelength Spectrometer Fabry-Perot (LWS/FP; R~6800-9700) on board the Infrared Space Observatory (ISO) between ~43 and ~197 um. The water line profiles evolve from P-Cygni type profiles (even for the H2O18 lines) to pure emission at wavelengths above ~100 um. We find that most of the water emission/absorption arises from an extended flow of gas expanding at 25+-5 kms^-1. Non-local radiative transfer models show that much of the water excitation and line profile formation is driven by the dust continuum emission. The derived beam averaged water abundance is 2-3x10^-5. The inferred gas temperature Tk=80-100 K suggests that: (i) water could have been formed in the "plateau" by gas phase neutral-neutral reactions with activation barriers if the gas was previously heated (e.g. by shocks) to >500 K and/or (ii) H2O formation in the outflow is dominated by in-situ evaporation of grain water-ice mantles and/or (iii) H2O was formed in the innermost and warmer regions (e.g. the hot core) and was swept up in ~1000 yr, the dynamical timescale of the outflow.

J. Cernicharo; J. R. Goicoechea; F. Daniel; M. R. Lerate; M. J. Barlow; B. M. Swinyard; E. van Dishoeck; T. L. Lim; S. Viti; J. Yates

2006-08-16T23:59:59.000Z

318

USE OF NATURALLY-OCCURRING TRACERS TO MONITOR TWO-PHASE CONDITIONS...  

Open Energy Info (EERE)

to vapor-dominated. High concentrations of boron are transported to the wellbore in the steam, where it fractionates to the liquid phase flowing in from liquid-dominated feed...

319

Structure and epitaxy studies of cobalt silicide/silicon heterostructures  

SciTech Connect (OSTI)

When considering transition metal silicides for use in integrated circuit technology, CoSi{sub 2} stands out as a silicide possessing an excellent combination of properties. However, the detrimental effects of CoSi{sub 2} pinhole formation seriously restricts the applicability of this silicide system. This study examines the structure/processing/property relationship of thin film cobalt silicide/silicon heterostructures grown on Si(111). The two primary objectives were: (1) identify the basic mechanisms associated with pinhole formation and cobalt silicide thin film growth; and (2) characterization of cobalt silicides grown by Si{sub a}/Co/Si{sub c} multilayer deposition and reaction and the effect this deposition technique has on the microstructure of cobalt silicide thin films. Interfacial pinhole formation was identified at the CoSi/Si interface and involves several active mechanisms. Epitaxial pinhole free CoSi{sub 2} films were grown by single-step annealing Si{sub a}/Co/Si{sub c} multilayer structures. Two step annealing Si{sub a}/Co/Si{sub c} multilayer thin films results in polycrystalline CoSi{sub 2}.

Zaluzec, M.J.

1991-01-01T23:59:59.000Z

320

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Controlled epitaxial graphene growth within removable amorphous carbon corrals  

SciTech Connect (OSTI)

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200?°C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330?°C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

Palmer, James; Hu, Yike; Hankinson, John; Guo, Zelei; Heer, Walt A. de [School of Physics, Georgia Institute of Technology, 837 State St. NW, Atlanta, Georgia 30332 (United States); Kunc, Jan [School of Physics, Georgia Institute of Technology, 837 State St. NW, Atlanta, Georgia 30332 (United States); Faculty of Mathematics and Physics, Institute of Physics, 12116 Prague (Czech Republic); Berger, Claire [School of Physics, Georgia Institute of Technology, 837 State St. NW, Atlanta, Georgia 30332 (United States); Université Grenoble Alpes/CNRS—Institut Néel, BP166, Grenoble Cedex 9 38042 (France)

2014-07-14T23:59:59.000Z

322

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR  

E-Print Network [OSTI]

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR By SCOTT RUSSELL WAITUKAITIS A Thesis Submitted: #12;Abstract I describe a study of Faraday rotation in a hot lithium vapor. I begin by dis- cussing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 The Lithium Oven and Solenoid . . . . . . . . . . . . . . . . . 7 3 Theoretical Framework

Cronin, Alex D.

323

Isotopic composition of stratospheric water vapor: Measurements and photochemistry  

E-Print Network [OSTI]

of magnitude between the surface and the tropopause, and isotopically heavy water is pref- erentially removedIsotopic composition of stratospheric water vapor: Measurements and photochemistry David G. Johnson composition of stratospheric water vapor that result from methane oxidation and reactions with O( ¢¡ ). We

324

Chemical vapor detection with a multispectral thermal imager  

E-Print Network [OSTI]

Chemical vapor detection with a multispectral thermal imager Mark 1. G. Aithouse, MEMBER SPIE U.S. Army Chemical Research Development and Engineering Center SMCCR-DDT Aberdeen Proving Ground, Maryland algorithm 7. Conclusions 8. Acknowledgments 9. References 1. INTRODUCTION Detection of chemical vapor clouds

Chang, Chein-I

325

Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-  

E-Print Network [OSTI]

I BNL- 62834 Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-· [D VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY- A DISCUSSION OF TECHNICAL FEASIBILITY Concept MONEY --A DISCUSSION OF TECHNICAL FEASffiILITY Russell N. Dietz, Head Tracer Technology Center

326

Temperature dependent vapor pressures of chlorinated catechols, syringols, and syringaldehydes  

SciTech Connect (OSTI)

The vapor pressures of nine chlorinated catechols, syringols, and syringaldehydes were determined as a function of temperature with a gas chromatographic retention time technique. The vapor pressures at 298.15 K were in the range of 0.02--1 Pa, and the enthalpies of vaporization, between 68 and 82 kJ/mol. The validity of the technique was established by a calibration involving four chlorinated phenols with well-known vapor pressures. Using these data and previously reported solubility data, Henry`s law constants for these substances and some chlorinated guaiacols and veratrols were estimated. The vapor pressure of these substances tends to decrease with increasing polarity and an increasing number of chlorine atoms. Henry`s law constants decrease sharply with increasing polarity, suggesting that methylation can result in a significant increase in a chemical`s potential for volatilization from water.

Lei, Y.D.; Shiu, W.Y.; Boocock, D.G.B. [Univ. of Toronto, Ontario (Canada). Dept. of Chemical Engineering and Applied Chemistry] [Univ. of Toronto, Ontario (Canada). Dept. of Chemical Engineering and Applied Chemistry; Wania, F. [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada)] [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada)

1999-03-01T23:59:59.000Z

327

Analysis of electron-beam vaporization of refractory metals  

SciTech Connect (OSTI)

An electron beam is focussed onto a small area on the surface of a refractory metal to locally raise the temperature and vaporize metal. At high vaporization rates the hot area is on the surface of a churning liquid-metal pool contained in a solid-metal skull which sits in a cooled crucible. Inner workings of the process are revealed by analysis of momentum, energy, and mass transfer. At the surface high temperature causes high vaporization rate and high vapor thrust, depressing the vapor/liquid surface. In the liquid pool surface-tension gradients and thermal buoyancy drive a (typically) chaotic flow. In the solid skull thermal conductivity and contact resistance regulate the rate of heat transfer from pool to crucible. Analyses of these phenomena together reveal process performance sensitivities - e.g., to depression size or to magnitude of surface-tension gradients. 12 refs., 3 figs.

Kheshgi, H.S.; Gresho, P.M.

1986-09-01T23:59:59.000Z

328

Oxide vapor distribution from a high-frequency sweep e-beam system  

SciTech Connect (OSTI)

Oxide vapor distributions have been determined as a function of operating parameters of a high frequency sweep e-beam source combined with a programmable sweep controller. We will show which parameters are significant, the parameters that yield the broadest oxide deposition distribution, and the procedure used to arrive at these conclusions. A design-of-experimental strategy was used with five operating parameters: evaporation rate, sweep speed, sweep pattern (pre-programmed), phase speed (azimuthal rotation of the pattern), profile (dwell time as a function of radial position). A design was chosen that would show which of the parameters and parameter pairs have a statistically significant effect on the vapor distribution. Witness flats were placed symmetrically across a 25 inches diameter platen. The stationary platen was centered 24 inches above the e-gun crucible. An oxide material was evaporated under 27 different conditions. Thickness measurements were made with a stylus profilometer. The information will enable users of the high frequency e-gun systems to optimally locate the source in a vacuum system and understand which parameters have a major effect on the vapor distribution.

Chow, R.; Tassano, P.L.; Tsujimoto, N.

1995-03-01T23:59:59.000Z

329

Microwave and Millimeter-Wave Radiometric Studies of Temperature, Water Vapor and Clouds  

SciTech Connect (OSTI)

The importance of accurate measurements of column amounts of water vapor and cloud liquid has been well documented by scientists within the Atmospheric Radiation Measurement (ARM) Program. At the North Slope of Alaska (NSA), both microwave radiometers (MWR) and the MWRProfiler (MWRP), been used operationally by ARM for passive retrievals of the quantities: Precipitable Water Vapor (PWV) and Liquid Water Path (LWP). However, it has been convincingly shown that these instruments are inadequate to measure low amounts of PWV and LWP. In the case of water vapor, this is especially important during the Arctic winter, when PWV is frequently less than 2 mm. For low amounts of LWP (< 50 g/m{sup 2}), the MWR and MWRP retrievals have an accuracy that is also not acceptable. To address some of these needs, in March-April 2004, NOAA and ARM conducted the NSA Arctic Winter Radiometric Experiment - Water Vapor Intensive Operational Period at the ARM NSA/Adjacent Arctic Ocean (NSA/AAO) site. After this experiment, the radiometer group at NOAA moved to the Center for Environmental Technology (CET) of the Department of Electrical and Computer Engineering of the University of Colorado at Boulder. During this 2004 experiment, a total of 220 radiosondes were launched, and radiometric data from 22.235 to 380 GHz were obtained. Primary instruments included the ARM MWR and MWRP, a Global Positioning System (GPS), as well as the CET Ground-based Scanning Radiometer (GSR). We have analyzed data from these instruments to answer several questions of importance to ARM, including: (a) techniques for improved water vapor measurements; (b) improved calibration techniques during cloudy conditions; (c) the spectral response of radiometers to a variety of conditions: clear, liquid, ice, and mixed phase clouds; and (d) forward modeling of microwave and millimeter wave brightness temperatures from 22 to 380 GHz. Many of these results have been published in the open literature. During the third year of this contract, we participated in another ARM-sponsored experiment at the NSA during February-March 2007. This experiment is called the Radiative Heating in Underexplored Bands Campaign (RHUBC) and the GSR was operated successfully for the duration of the campaign. One of the principal goals of the experiment was to provide retrievals of water vapor during PWV amounts less than 2 mm and to compare GSR data with ARM radiometers and radiosondes. A secondary goal was to compare the radiometric response of the microwave and millimeter wavelength radiometers to water and ice clouds. In this final report, we will include the separate progress reports for each of the three years of the project and follow with a section on major accomplishments of the project.

Westwater, Edgeworth

2011-05-06T23:59:59.000Z

330

Chemical vapor deposition of group IIIB metals  

DOE Patents [OSTI]

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Erbil, A.

1989-11-21T23:59:59.000Z

331

Kinetics of wet sodium vapor complex plasma  

SciTech Connect (OSTI)

In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.

Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

2014-04-15T23:59:59.000Z

332

A model of vapor-liquid equilibria for acid gas-alkanolamine-water systems  

SciTech Connect (OSTI)

A physico-chemical model was developed for representing liquid phase chemical equilibria and vapor-liquid (phase) equilibria of H{sub 2}SCO{sub 2}-alkanolamine-water systems. The equilibrium composition of the liquid phase is determined by minimization of the Gibbs free energy. Activity coefficients are represented with the Electrolyte-NRTL equation treating both long-range electrostatic interactions and short-range binary interactions between liquid phase species. Vapor phase fugacity coefficients are calculated using the Redlich-Kwong-Soave Equation of State. Adjustable parameters of the model, binary interaction parameters and carbamate stability constants, were fitted on published binary system alkanolamine-water and ternary system (H{sub 2}S-alkanolamine-water, CO{sub 2}-alkanolamine-water) VLE data. The Data Regression System of ASPEN PLUS, based upon the Maximum Likelihood Principle, was used to estimate adjustable parameters. Ternary system measurements used in parameter estimation ranged in temperature from 25 to 120{degree}C in alkanolamine concentration from 1 to 5 M, in acid gas loading from 0 to 1.5 moles per mole alkanolamine, and in acid gas partial pressure from 0.1 to 1,000 kPa. Maximum likelihood estimates of ternary system H{sub 2} or CO{sub 2} equilibrium partial pressures and liquid phase concentrations were found to be in good agreement with measurements for aqueous solutions of monoethanolamine (MEA), diethanolamine (DEA), diglycolamine (DGA), and methyldiethanolamine (MDEA) indicating that the model successfully represents ternary system data. The model was extended to represent CO{sub 2} solubility in aqueous mixtures of MDEA with MEA or DEA. The solubility was measured at 40 and 80{degree}C over a wide range of CO{sub 2} partial pressures. These measurements were used to estimate additional binary parameters of the mixed solvent systems.

Austgen, D.M. Jr.

1989-01-01T23:59:59.000Z

333

Phase equilibrium measurements on twelve binary mixtures  

SciTech Connect (OSTI)

Phase equilibrium measurements have been performed on twelve binary mixtures. The PTx method was used to obtain vapor-liquid equilibrium data for the following binary systems at two temperatures each: ethanethiol + propylene; nitrobenzene + methanol; pyridine + ethyl acetate; octane + tert-amyl methyl ether; diisopropyl ether + butane; 1,3-dichloro-2-propanol + epichlorohydrin; 2,3-dichloro-1-propanol + epichlorohydrin; 2,3-epoxy-1-propanol + epichlorohydrin; 3-chloro-1,2-propanediol + epichlorohydrin; methanol + hydrogen cyanide. For these systems, equilibrium vapor and liquid phase compositions were derived from the PTx data using the Soave equation of state to represent the vapor phase and the Wilson, NRTL, or Redlich-Kister activity coefficient model to represent the liquid phase. The infinite dilution activity coefficient of methylamine in N-methyl-2-pyrrolidone was determined at three temperatures by performing PTx measurements on the N-methyl-2-pyrrolidone was determined at three temperatures by performing PTx measurements on the N-methyl-2-pyrrolidone-rich half of the binary. Liquid-liquid equilibrium studies were made on the triethylene glycol + 1-pentene system at two temperatures by directly analyzing samples taken from each liquid phase.

Giles, N.F. [Wiltec Research Co., Inc., Provo, UT (United States)] [Wiltec Research Co., Inc., Provo, UT (United States); Wilson, H.L.; Wilding, W.V. [Brigham Young Univ., Provo, UT (United States). Chemical Engineering Dept.] [Brigham Young Univ., Provo, UT (United States). Chemical Engineering Dept.

1996-11-01T23:59:59.000Z

334

Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System  

SciTech Connect (OSTI)

HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

None

2012-01-04T23:59:59.000Z

335

Gas Separation Using Organic-Vapor-Resistent Membranes In Conjunctin With Organic-Vapor-Selective Membranes  

DOE Patents [OSTI]

A process for treating a gas mixture containing at least an organic compound gas or vapor and a second gas, such as natural gas, refinery off-gas or air. The process uses two sequential membrane separation steps, one using membrane selective for the organic compound over the second gas, the other selective for the second gas over the organic vapor. The second-gas-selective membranes use a selective layer made from a polymer having repeating units of a fluorinated polymer, and demonstrate good resistance to plasticization by the organic components in the gas mixture under treatment, and good recovery after exposure to liquid aromatic hydrocarbons. The membrane steps can be combined in either order.

Baker, Richard W. (Palo Alto, CA); Pinnau, Ingo (Palo Alto, CA); He, Zhenjie (Fremont, CA); Da Costa, Andre R. (Menlo Park, CA); Daniels, Ramin (San Jose, CA); Amo, Karl D. (Mountain View, CA); Wijmans, Johannes G. (Menlo Park, CA)

2003-06-03T23:59:59.000Z

336

M. Bahrami ENSC 461 (S 11) Vapor Power Cycles 1 Vapor Power Cycles  

E-Print Network [OSTI]

is not a suitable model for steam power cycle since: The turbine has to handle steam with low quality which steam is condensed in the condenser 4 3 1 2 s T 1 2 34 s #12;M. Bahrami ENSC 461 (S 11) Vapor Power = 0 qin = h3 ­ h2 Turbine q = 0 wturbine,out = h3 ­ h4 Condenser w = 0 qout = h4 ­ h1 The thermal

Bahrami, Majid

337

Vapor-liquid equilibria of sulfur dioxide in polar organic solvents  

SciTech Connect (OSTI)

Vapor-liquid equilibrium data for SO/sub 2/ in eight polar organic solvents and three mixtures of organic solvents were investigated over the temperature range 30-95/sup 0/C and over a concentration range of 0.02-0.16 weight fraction of SO/sub 2/. The solvents investigated were N, N-dimethylaniline (DMA); quinoline; the dimethyl ethers of diethylene glycol, triethylene glycol, and tetraethylene glycol; the monomethyl ether of diethylene glycol (DGM); tetramethylene sulfone; and tributyl phosphate. The mixed solvents investigated were various mixtures of DMA and DGM. The data were correlated by using the UNIQUAC, NRTL, Wilson, and Henry's law phase-equilibrium models.

Demyanovich, R.J.; Lynn, S.

1987-03-01T23:59:59.000Z

338

Light storage in a room temperature atomic vapor based on coherent population oscillations  

E-Print Network [OSTI]

We report the experimental observation of Coherent Population Oscillation (CPO) based light storage in an atomic vapor cell at room temperature. Using the ultranarrow CPO between the ground levels of a $\\Lambda$ system selected by polarization in metastable $^4$He, such a light storage is experimentally shown to be phase preserving. As it does not involve any atomic coherences it has the advantage of being robust to dephasing effects such as small magnetic field inhomogeneities. The storage time is limited by the population lifetime of the ground states of the $\\Lambda$ system.

M. -A. Maynard; F. Bretenaker; F. Goldfarb

2014-10-21T23:59:59.000Z

339

DOE/SC-ARM/TR-122 G-Band Vapor Radiometer Precipitable Water  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases onOrganizationElectronic Reading2Q)38232 Revision2 G-Band Vapor

340

DOE/SC-ARM/TR-128 Tower Water-Vapor Mixing Ratio Value-Added  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases onOrganizationElectronic Reading2Q)38232 Revision2 G-Band Vapor48

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 10{sup 19}–10{sup 21} cm{sup ?3} while the Hall mobilities ranged from 50–130 cm{sup 2}·V{sup ?1}·s{sup ?1} for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions.

Ohgaki, Takeshi; Watanabe, Ken; Adachi, Yutaka; Sakaguchi, Isao; Hishita, Shunichi; Ohashi, Naoki; Haneda, Hajime [Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2013-09-07T23:59:59.000Z

342

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of  

E-Print Network [OSTI]

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers used to characterize as- deposited epitaxial TiN 001 layers grown in situ. The films were deposited, while the UPS data was generated by He I and He II UV radiation. The spectra show that the TiN 001

Gall, Daniel

343

/II sifu reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy  

E-Print Network [OSTI]

/II sifu reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy Shouleh Nikzad, Selmer S. Wong, Channing C. Ahn, Aimee L. Smith molecular beam epitaxy system, using reflection electron energy loss spectroscopy, in conjunction

Atwater, Harry

344

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature  

E-Print Network [OSTI]

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature Simone film crystal growth of silicon carbide (SiC), a semiconductor syn- thesized to replace silicon in harsh

Alfè, Dario

345

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon Nanotube Thin Film  

E-Print Network [OSTI]

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device

346

The Effects of Water Vapor and Hydrogen on the High-Temperature Oxidation of Alloys  

SciTech Connect (OSTI)

Essentially all alloys and coatings that are resistant to corrosion at high temperature require the formation of a protective (slowly-growing and adherent) oxide layer by a process known as selective oxidation. The fundamental understanding of this process has been developed over the years for exposure in pure oxygen or air. However, the atmospheres in most applications contain significant amounts of water vapor which can greatly modify the behavior of protective oxides. The development of oxy-fuel combustion systems in which fossil fuels are burned in a mixture of recirculated flue gas and oxygen, rather than in air, has caused renewed interest in the effects of water vapor and steam on alloy oxidation. The focus of this paper is on the ways the presence of water vapor can directly alter the selective oxidation process. The paper begins with a brief review of the fundamentals of selective oxidation followed by a description of recent experimental results regarding the effect of water vapor on the oxidation of a variety of chromia-forming alloys (Fe- and Ni-base) in the temperature range 600 to 700 °C. The atmospheres include air, air-H{sub 2}O, Ar-H{sub 2}O and Ar-H{sub 2}O-O{sub 2}. Then the behavior of alumina-forming alloys in H{sub 2}O-containing atmospheres is briefly described. As hydrogen is produced during oxidation of alloys in H{sub 2}O, it can be released back into the gas phase or injected into the metal (where it can diffuse through to the other side). Experiments in which hydrogen concentrations have been measured on both sides of thin specimens during oxidation by H{sub 2}O on only one side are described. Finally, it is attempted to catalogue the various experimental observations under a few general principles.

Mu, N.; Jung, K.; Yanar, N. M.; Pettit, F. S; Holcomb, G. R.; Howard, B. H.; Meier, G. H.

2013-06-01T23:59:59.000Z

347

E-Print Network 3.0 - aerosol-assisted chemical vapor Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Work to Prevent Chemical Warfare Agent Vapor Infiltration? John H. Sorensen Barbara M. Vogt Date... protection strategies to reduce exposure to vapors from chemical warfare...

348

E-Print Network 3.0 - arc vapor deposition Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

has been produced... al Vaporization and melting of materials in fusion devices 325 ENERGY DEPOSITED (Jcm21 Figure 3... VAPORIZATION AND MELTING OF MATERIALS IN FUSION...

349

E-Print Network 3.0 - atomic vapor laser Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with the exception of pagination. IEEE TRANSACTIONS ON PLASMA SCIENCE 1 Summary: vapor, atomic physics and vapor ionization, absorption reflection in a heated plasma layer, and...

350

E-Print Network 3.0 - atom vapor cells Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rotation in the vapor cell due to inten- sity-induced birefringence in the rubidium atomic vapor. While... Super efficient absorption filter for quantum memory using atomic...

351

Isobaric vapor-liquid equilibria of the water + 1-propanol system at 30, 60, and 100 kPa  

SciTech Connect (OSTI)

Isobaric vapor-liquid equilibria for the water + 1-propanol system are reported at 30, 60, and 100 kPa. The results were found to be thermodynamically consistent according to Van Ness-Byer-Gibbs, Kojima, and Wisniak methods. The system shows a minimum boiling azeotrope, and the azeotropic composition is scarcely shifted with pressure. Results were compared with literature values. The data were correlated with Margules, Van Laar, Wilson, NRTL, and UNIQUAC liquid-phase activity coefficient models.

Gabaldon, C.; Marzal, P.; Monton, J.B.; Rodrigo, M.A. [Univ. de Valencia (Spain). Dept. de Ingenieria Quimica] [Univ. de Valencia (Spain). Dept. de Ingenieria Quimica

1996-09-01T23:59:59.000Z

352

Studies on multi-phase equilibrium separation of hydrocarbon/water systems  

E-Print Network [OSTI]

-phase equilibria for systems containing water, and simplify the programming technique. This scheme checks the existence of three-phase flash at given reservoir conditions, and if three-phase flash (vapor-oleic-aqueous) doesn't exist, it automatically switches...

Chawla, Inderjit Singh

1995-01-01T23:59:59.000Z

353

Isobaric vapor-liquid equilibria of 1-butanol + N,N-dimethylformamide and 1-pentanol + N,N-dimethylformamide systems at 50.00 and 100.00 kPa  

SciTech Connect (OSTI)

The experimental determinations of vapor-liquid equilibria (VLE) are indispensable for the design of separation processes such as distillation columns, extractive distillation, and selection of solvents. Isobaric vapor-liquid equilibria were obtained for the 1-butanol + N,N-dimethylformamide and 1-pentanol + N,N-dimethylformamide systems at 50.00 and 100.00 kPa. The activity coefficients were found to be thermodynamically consistent. The data were correlated with five liquid phase activity coefficient models (Margules, Van Laar, Wilson, NRTL, and UNIQUAC). Experimental vapor pressures of N,N-dimethylformamide are also included.

Marzal, P.; Gabaldon, C.; Seco, A.; Monton, J.B. [Univ. de Valencia (Spain). Dept. de Ingenieria Quimica

1995-05-01T23:59:59.000Z

354

Epitaxial growth of 100-?m thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates  

SciTech Connect (OSTI)

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ?100??m were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4?M{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ?100?Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-05-07T23:59:59.000Z

355

Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire  

SciTech Connect (OSTI)

The surface photovoltage method is used to study “silicon-on-sapphire” epitaxial layers with a thickness of 0.3–0.6 ?m, which are used to fabricate p-channel MOS (metal—oxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ?400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a “silicon-on-sapphire” structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.

Yaremchuk, A. F.; Starkov, A. V.; Zaikin, A. V., E-mail: lynch0000@gmail.com [National Rsearch University MIET (Russian Federation); Alekseev, A. V. [ZAO “Telekom-STV” (Russian Federation); Sokolov, E. M. [ZAO “Epiel” (Russian Federation)

2014-12-15T23:59:59.000Z

356

Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices  

E-Print Network [OSTI]

In this project, we implement modern metal organic chemical vapor deposition (MOCVD) technology to fabricate monolithic platforms which integrate traditionally incompatible materials with the ultimate goal of achieving ...

Mori, Michael James

2008-01-01T23:59:59.000Z

357

Enhanced Attenuation Technologies: Passive Soil Vapor Extraction  

SciTech Connect (OSTI)

Passive soil vapor extraction (PSVE) is an enhanced attenuation (EA) approach that removes volatile contaminants from soil. The extraction is driven by natural pressure gradients between the subsurface and atmosphere (Barometric Pumping), or by renewable sources of energy such as wind or solar power (Assisted PSVE). The technology is applicable for remediating sites with low levels of contamination and for transitioning sites from active source technologies such as active soil vapor extraction (ASVE) to natural attenuation. PSVE systems are simple to design and operate and are more cost effective than active systems in many scenarios. Thus, PSVE is often appropriate as an interim-remedial or polishing strategy. Over the past decade, PSVE has been demonstrated in the U.S. and in Europe. These demonstrations provide practical information to assist in selecting, designing and implementing the technology. These demonstrations indicate that the technology can be effective in achieving remedial objectives in a timely fashion. The keys to success include: (1) Application at sites where the residual source quantities, and associated fluxes to groundwater, are relatively low; (2) Selection of the appropriate passive energy source - barometric pumping in cases with a deep vadose zone and barrier (e.g., clay) layers that separate the subsurface from the atmosphere and renewable energy assisted PSVE in other settings and where higher flow rates are required. (3) Provision of sufficient access to the contaminated vadose zones through the spacing and number of extraction wells. This PSVE technology report provides a summary of the relevant technical background, real-world case study performance, key design and cost considerations, and a scenario-based cost evaluation. The key design and cost considerations are organized into a flowchart that dovetails with the Enhanced Attenuation: Chlorinated Organics Guidance of the Interstate Technology and Regulatory Council (ITRC). The PSVE flowchart provides a structured process to determine if the technology is, or is not, reasonable and defensible for a particular site. The central basis for that decision is the expected performance of PSVE under the site specific conditions. Will PSVE have sufficient mass removal rates to reduce the release, or flux, of contamination into the underlying groundwater so that the site can meet it overall remedial objectives? The summary technical information, case study experiences, and structured decision process provided in this 'user guide' should assist environmental decision-makers, regulators, and engineers in selecting and successfully implementing PSVE at appropriate sites.

Vangelas, K.; Looney, B.; Kamath, R.; Adamson, D.; Newell, C.

2010-03-15T23:59:59.000Z

358

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC  

SciTech Connect (OSTI)

The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ?10?nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ?190???m for step height h{sub S}?=?10?nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2014-09-28T23:59:59.000Z

359

Catalytic Reactor For Oxidizing Mercury Vapor  

DOE Patents [OSTI]

A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

Helfritch, Dennis J. (Baltimore, MD)

1998-07-28T23:59:59.000Z

360

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Low Level Heat Recovery Through Heat Pumps and Vapor Recompression  

E-Print Network [OSTI]

The intent of this paper is to examine the methods and economics of recovering low level heat through heat pumps and vapor recompression. Actual commercially available equipment is considered to determine the near-term and future economic viability...

Gilbert, J.

1980-01-01T23:59:59.000Z

362

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

363

All graphene electromechanical switch fabricated by chemical vapor deposition  

E-Print Network [OSTI]

We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

Milaninia, Kaveh M.

364

Applications of Mechanical Vapor Recompression to Evaporation and Crystallization  

E-Print Network [OSTI]

there is no boiler plant available or when electrical power is priced competitively in comparison to steam. Vapor recompression is accomplished using centrifugal, axial-flow, or positive displacement compressors and these compressors can be powered by electricity...

Outland, J. S.

365

Melt and vapor characteristics in an electron beam evaporator  

SciTech Connect (OSTI)

We compare the free surface temperatures T{sub s}, calculated by two methods, in cerium or copper evaporation experiments. The first method considers properties of the melt: by an empirical law we take into account turbulent thermal convection, instabilities and craterization of the free surface. The second method considers the vapor flow expansion and connects T{sub s} to the measured terminal parallel temperature and the terminal mean parallel velocity of the vapor jet, by Direct Simulation Monte Carlo calculations including an atom-atom inelastic collision algorithm. The agreement between the two approaches is better for cerium than for copper in the high craterization case. The analysis, from the point of view of the properties of the melt, of the terminal parameters of the vapor jet for the high beam powers shows that T{sub s} and the Knudsen number at the vapor source reach a threshold when the beam power increases.

Blumenfeld, L.; Fleche, J.L.; Gonella, C. [DCC/DPE/SPEA Centre d`Etudes de Saclay, Gif-sur-Yvette (France)

1994-12-31T23:59:59.000Z

366

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

367

Hyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy  

E-Print Network [OSTI]

the frequency of a laser with respect to an atomic spectral feature.[20] As such, saturated absorptionHyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy? . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.3 Broadening Mechanisms . . . . . . . . . . . . . . . . . . . . . 15 3.4 Saturated Absorption

Cronin, Alex D.

368

Heat transfer during film condensation of a liquid metal vapor  

E-Print Network [OSTI]

The object of this investigation is to resolve the discrepancy between theory and experiment for the case of heat transfer durirnfilm condensation of liquid metal vapors. Experiments by previous investigators have yielded ...

Sukhatme, S. P.

1964-01-01T23:59:59.000Z

369

Photoinitiated chemical vapor depostion [sic] : mechanism and applications  

E-Print Network [OSTI]

Photoinitiated chemical vapor deposition (piCVD) is developed as a simple, solventless, and rapid method for the deposition of swellable hydrogels and functional hydrogel copolymers. Mechanistic experiments show that piCVD ...

Baxamusa, Salmaan Husain

2009-01-01T23:59:59.000Z

370

Optical Precursors in Rubidium Vapor and Their Relation to Superradiance  

E-Print Network [OSTI]

Optical precursor is the sharp optical pulse front that does not show delay in absorptive media. In this thesis, optical precursor behavior in rubidium (Rb) vapor was investigated in the picoseconds regime. An amplified femtosecond laser was shaped...

Yang, Wenlong

2012-10-19T23:59:59.000Z

371

Systems and methods for generation of hydrogen peroxide vapor  

DOE Patents [OSTI]

A system according to one embodiment includes a moisture trap for drying air; at least one of a first container and a second container; and a mechanism for at least one of: bubbling dried air from the moisture trap through a hydrogen peroxide solution in the first container for producing a hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above a hydrogen peroxide solution in the second container for producing a hydrogen peroxide vapor. A method according one embodiment includes at least one of bubbling dried air through a hydrogen peroxide solution in a container for producing a first hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above the hydrogen peroxide solution in a container for producing a second hydrogen peroxide vapor. Additional systems and methods are also presented.

Love, Adam H; Eckels, Joel Del; Vu, Alexander K; Alcaraz, Armando; Reynolds, John G

2014-12-02T23:59:59.000Z

372

Type B Accident Investigation of the Acid Vapor Inhalation on...  

Broader source: Energy.gov (indexed) [DOE]

2005, in TA-48, Building RC-1 Room 402 at the Los Alamos National Laboratory Type B Accident Investigation of the Acid Vapor Inhalation on June 7, 2005, in TA-48, Building RC-1...

373

Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions  

E-Print Network [OSTI]

ically feasible systems have significant potential advantage over conventional tech nology. An electric drive reactive heat pump can use smaller heat exchangers and compressor than a vapor-compression machine, and have more flexible operating... are discussed, and performance is bounded. A discussion on liquid-vapor equilibria is included as introduction to the systems I- considered. The electric drive heat pump and TA are promising systems; the TA has potential for higher COP than absorption...

Kirol, L.

374

Injection locked oscillator system for pulsed metal vapor lasers  

DOE Patents [OSTI]

An injection locked oscillator system for pulsed metal vapor lasers is disclosed. The invention includes the combination of a seeding oscillator with an injection locked oscillator (ILO) for improving the quality, particularly the intensity, of an output laser beam pulse. The present invention includes means for matching the first seeder laser pulses from the seeding oscillator to second laser pulses of a metal vapor laser to improve the quality, and particularly the intensity, of the output laser beam pulse.

Warner, Bruce E. (Livermore, CA); Ault, Earl R. (Dublin, CA)

1988-01-01T23:59:59.000Z

375

The development of a passive dosimeter for airborne benzene vapors  

E-Print Network [OSTI]

entirely different from that usually employed in gas or vapor collection devices, as there is no need for pumps and airflow control s to provi de fi xed airflows or volumes. This principle, Ficks First Law of Diffusion, states tha t the rate of transfer...+ Ilay 1978 ABSTRACT The Development of a Passive Dosimeter for Airborne Benzene Vapor. ", . (Nay 1978) David Hilliam Hager, B. S. , University of Rochester; Chairman of Advisory Committee: Dr. David F. Ciapo Passive diffusion dosimeters offer...

Hager, David William

2012-06-07T23:59:59.000Z

376

ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

Cadeddu, Maria

377

Transition from Epitaxial to Nonepitaxial Ordered Monolayers in Pyrolyzed 8CB Studied by STM  

E-Print Network [OSTI]

-ordered, epitaxial monolayers on graphite. We have found that adding two oxidation products (to mimic the effects of air oxidation or pyrolysis) changes the surface ordering of 8CB, causing it to form cell dimensions of one of the oxidation products, both pure oxidation products were found to form

Patrick, David L.

378

Growth of epitaxial tungsten oxide nanorods M.Gillet*, R. Delamare, E. Gillet  

E-Print Network [OSTI]

the grain boundaries. So the synthesis of monocristalline tungsten oxide as nanowires or nanorods amorphous tungsten oxide nanoparticles. Y.B. Li et al [18] have synthesized WO3 nanobelts and nanorods via1 Growth of epitaxial tungsten oxide nanorods M.Gillet*, R. Delamare, E. Gillet UNIVERSITE D

Paris-Sud XI, Université de

379

Improved One-dimensional Analysis of CMOS Photodiode Including Epitaxial-Substrate Junction  

E-Print Network [OSTI]

1 Improved One-dimensional Analysis of CMOS Photodiode Including Epitaxial-Substrate Junction J. S-dimensional analysis of CMOS photodiode has been derived in which the effect of the substrate, which forms a high-empirical expression exhibits a good agreement with the measured spectral response of n+ pepi photodiodes fabricated

Hornsey, Richard

380

Surface Science 415 (1998) 363375 Epitaxial growth of Cu onto Si(111) surfaces at low temperature  

E-Print Network [OSTI]

to 10 and 3 monolayers (ML), respectively. This change is attributed to the silicide formation on the Si(111)-(7�7) surface at 160 K is proposed. The changes in periodicity are due to the silicide rights reserved. Keywords: Copper; Epitaxy; Electron­solid diffraction; Metallic films; Metal

Hasegawa, Shuji

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon  

E-Print Network [OSTI]

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon H. Wang, A 2001) We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate

Wei, Qiuming

382

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies  

E-Print Network [OSTI]

LETTERS GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies-frequency electronics3,4 and most forms of optoelectronics5,6 . However, growing large, high quality wafers implementation. More tractable, yet still difficult, problems appear in advanced electronics and optoelectronics

Rogers, John A.

383

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature  

E-Print Network [OSTI]

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature Roberto Verucchi carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting Si or plastics that cannot withstand high temperatures. Silicon carbide (SiC) has unique properties that make

Alfè, Dario

384

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers  

DOE Patents [OSTI]

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Chang, Y. Austin (Middleton, WI); Yang, Jianhua Joshua (Madison, WI)

2008-11-11T23:59:59.000Z

385

Chlorine Etching For In-Situ Low-Temperature Silicon Surface Cleaning For Epitaxy Applications  

E-Print Network [OSTI]

. of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA Chlorine in a nitrogen ambient-situ in epitaxial reactors is typically done using hydrogen chloride (HCl) in a hydrogen ambient. However, the etch instead of hydrogen chloride to etch silicon in a hydrogen ambient (4). It was observed that the etch rate

386

Half integer quantum Hall effect in high mobility single layer epitaxial graphene  

E-Print Network [OSTI]

Half integer quantum Hall effect in high mobility single layer epitaxial graphene Xiaosong Wu,1 of is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is 20 000. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si

387

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

SciTech Connect (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

388

Self-assembly of triangular quantum dots on (111)A substrates by droplet epitaxy  

SciTech Connect (OSTI)

We report the self-assembly of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature. The mechanism of the morphological change is discussed in terms of different growth rates of step edges on a (111)A substrate.

Jo, M.; Mano, T.; Abbarchi, M.; Kuroda, T. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakoda, K. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

389

Highly Anisotropic Dirac Cones in Epitaxial Graphene Modulated by an Island Superlattice S. Rusponi,1  

E-Print Network [OSTI]

Highly Anisotropic Dirac Cones in Epitaxial Graphene Modulated by an Island Superlattice S. Rusponi affects the spectral-weight distribution of the carbon bands as well as the electronic gaps between generation electronic devices [2]. Freestanding graphene is a zero-gap semiconductor. Because most electronic

Brune, Harald

390

Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering  

E-Print Network [OSTI]

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of ...

Ferralis, Nicola

391

Perpendicular anisotropy of ultrathin epitaxial cobalt films on graphene Chi Vo-Van,1  

E-Print Network [OSTI]

of magnetism. While graphite exfoliation provides flakes of graphene of lateral size limited to at most 100 µm in applications, e.g. concerning electronic transport or photovoltaics. So far devices have relied on electrodes-metal ferromagnetic systems. In this Letter we report the optimization of the epitaxial growth of Au-capped Co

Paris-Sud XI, Université de

392

X-ray radiation effects in multilayer epitaxial graphene Jeremy Hicks1  

E-Print Network [OSTI]

1 X-ray radiation effects in multilayer epitaxial graphene Jeremy Hicks1 , Rajan Arora2 , Eleazar and after exposure to a total ionizing dose (TID) of 12 Mrad(SiO2) using a 10 keV X-ray source. While we are mostly unaffected by radiation exposure. Combined with X-ray photoelectron spectroscopy (XPS) data

393

Tank Vapor Characterization Project: Annual status report for FY 1996  

SciTech Connect (OSTI)

In Fiscal Year 1996, staff at the Vapor Analytical Laboratory at Pacific Northwest National Laboratory performed work in support of characterizing the vapor composition of the headspaces of radioactive waste tanks at the Hanford Site. Work performed included support for technical issues and sampling methodologies, upgrades for analytical equipment, analytical method development, preparation of unexposed samples, analyses of tank headspaces samples, preparation of data reports, and operation of the tank vapor database. Progress made in FY 1996 included completion and issuance of 50 analytical data reports. A sampling system comparison study was initiated and completed during the fiscal year. The comparison study involved the vapor sampling system (VSS), a truck-based system, and the in situ vapor sampling system (ISVS), a cart-based system. Samples collected during the study were characterized for inorganic, permanent gases, total non-methane organic compounds and organic speciation by SUMMA{trademark} and TST methods. The study showed comparable sampling results between the systems resulting in the program switching from the VSS to the less expensive ISVS methodology in late May 1996. A temporal study was initiated in January 1996 in order to understand the influences seasonal temperatures changes have on the vapors in the headspace of Hanford waste tanks. A holding time study was initiated in the fourth quarter of FY 1996. Samples were collected from tank S-102 and rushed to the laboratory for time zero analysis. Additional samples will be analyzed at 1, 2, 4, 8, 16, and 32 weeks.

Silvers, K.L.; Fruchter, J.S.; Huckaby, J.L.; Almeida, T.L.; Evans, J.C. Jr.; Pool, K.H.; Simonen, C.A.; Thornton, B.M.

1997-01-01T23:59:59.000Z

394

Magnetic properties of epitaxial Co-doped anatase TiO2 thin films with excellent structural quality  

SciTech Connect (OSTI)

The heteroepitaxy of Co-doped anatase TiO2 on LaAlO3(001) has been refined with the goal of determining the relationship between structural quality and magnetic ordering. By significantly reducing the deposition rate and substrate temperature, well-ordered Co:TiO2 films with unprecedented crystalline quality were obtained by oxygen-plasma-assisted molecular beam epitaxy, as characterized by x-ray diffraction. These films exhibit uniform Co doping, with no evidence of Co segregation or secondary phases throughout the film depth or on the surface. Despite the improvement in crystalline quality and Co distribution, the films exhibit negligible ferromagnetism, with saturation moments of only ~0.1 ?B/Co. This loss of ferromagnetism is in stark contrast to faster-grown Co:TiO2 films, where a higher growth rate and substrate temperature typically result in lower crystalline quality, a highly non-uniform Co distribution, and average saturation moments of ~1.2 ?B/Co. The presence of ferromagnetism in faster-grown Co:TiO2 does not appear to arise from intrinsic point defects present in the bulk material, such as charge-compensating oxygen vacancies, but is instead attributed to the presence of extended structural defects.

Kaspar, Tiffany C.; Droubay, Timothy C.; McCready, David E.; Nachimuthu, Ponnusamy; Heald, Steve M.; Wang, Chong M.; Lea, Alan S.; Shutthanandan, V.; Chambers, Scott A.; Toney, Michael F.

2006-07-26T23:59:59.000Z

395

High-Quality Epitaxy of Ruthenium Dioxide, RuO2, on Rutile Titanium Dioxide, TiO2, by Pulsed Chemical Vapor Deposition  

E-Print Network [OSTI]

of rutile TiO2, a material with a high dielectric constant. Therefore, capacitors with high capacitance per these capacitors have low leakage current. Due to its good redox properties, RuO2 has been made into electrodes films have been made by CVD, such as wide-gap semiconductors ZnO23,25 and SnO2,26,27 super- conducting

396

Numerical Simulation of Hydrodynamics of a Heavy Liquid Drop Covered by Vapor Film in a Water Pool  

SciTech Connect (OSTI)

A numerical study on the hydrodynamics of a droplet covered by vapor film in water pool is carried out. Two level set functions are used as to implicitly capture the interfaces among three immiscible fluids (melt-drop, vapor and coolant). This approach leaves only one set of conservation equations for the three phases. A high-order Navier-Stokes solver, called Cubic-Interpolated Pseudo-Particle (CIP) algorithm, is employed in combination with level set approach, which allows large density ratios (up to 1000), surface tension and jump in viscosity. By this calculation, the hydrodynamic behavior of a melt droplet falling into a volatile coolant is simulated, which is of great significance to reveal the mechanism of steam explosion during a hypothetical severe reactor accident. (authors)

Ma, W.M.; Yang, Z.L.; Giri, A.; Sehgal, B.R. [Royal Institute of Technology (KTH), Drottning Kristinas vaeg 33 A, 100 44, Stockholm (Sweden)

2002-07-01T23:59:59.000Z

397

Isobaric vapor-liquid equilibria of the water + 2-propanol system at 30, 60, and 100 kPa  

SciTech Connect (OSTI)

Distillation is perhaps the separation process most widely used in the chemical processing industry. The correct design of distillation columns requires the availability of accurate and, if possible, thermodynamically consistent vapor-liquid equilibria (VLE) data. The present work is part of a project studying the effect of pressure on the behavior of the azeotropic point in mixtures in which at least one component is an alcohol. Isobaric vapor-liquid equilibria were obtained for the water + 2-propanol system at 30, 60, and 100 kPa. The activity coefficients were found to be thermodynamically consistent by the methods of Van Ness-Byer-Gibbs, Kojima, and Wisniak. The data were correlated with five liquid phase activity coefficient models (Margules, Van Laar, Wilson, NRTL, and UNIQUAC).

Marzal, P.; Monton, J.B.; Rodrigo, M.A. [Univ. de Valencia (Spain). Departamento de Ingenieria Quimica] [Univ. de Valencia (Spain). Departamento de Ingenieria Quimica

1996-05-01T23:59:59.000Z

398

Time-resolved spectroscopy on epitaxial graphene in the infrared spectral range: relaxation dynamics and saturation behavior  

E-Print Network [OSTI]

1 Time-resolved spectroscopy on epitaxial graphene in the infrared spectral range: relaxation graphene samples performed in a wide spectral range, namely from the near signatures of the highly doped graphene layers at the interface to Si

Boyer, Edmond

399

Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation  

SciTech Connect (OSTI)

It is observed that epitaxial graphene forms on the surface of a 6H-SiC substrate by irradiating electron beam directly on the sample surface in high vacuum at relatively low temperature ({approx}670 Degree-Sign C). The symmetric shape and full width at half maximum of 2D peak in the Raman spectra indicate that the formed epitaxial graphene is turbostratic. The gradual change of the Raman spectra with electron beam irradiation time increasing suggests that randomly distributed small grains of epitaxial graphene form first and grow laterally to cover the entire irradiated area. The sheet resistance of epitaxial graphene film is measured to be {approx}6.7 k{Omega}/sq.

Go, Heungseok; Jeon, Youngeun; Park, Kibog [School of Electrical and Computer Engineering, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798 (Korea, Republic of); Kwak, Jinsung; Yoo, Jung-Woo; Youb Kim, Sung; Kwon, Soon-Yong [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798 (Korea, Republic of); Kim, Sung-Dae; Kim, Young-Woon [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of); Cheol Lee, Byung; Suk Kang, Hyun [Quantum Optics Laboratory, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of); Ko, Jae-Hyeon [Department of Physics, Hallym University, Chuncheon Gangwondo 200-702 (Korea, Republic of); Kim, Nam [Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Kim, Bum-Kyu [Department of Physics, Chonbuk National University, Jeonju Chonbuk 561-756 (Korea, Republic of)

2012-08-27T23:59:59.000Z

400

Adatom density kinetic Monte Carlo: A hybrid approach to perform epitaxial growth simulations L. Mandreoli* and J. Neugebauer  

E-Print Network [OSTI]

.35.Fx I. INTRODUCTION Epitaxial growth is a key technique in fabricating semiconductor-based electronic deficiencies when applied to the above-mentioned topics: The first two approaches i and ii do not really bridge

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)  

SciTech Connect (OSTI)

Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

1995-12-01T23:59:59.000Z

402

Vapor etching of nuclear tracks in dielectric materials  

DOE Patents [OSTI]

A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

Musket, Ronald G. (Danville, CA); Porter, John D. (Berkeley, CA); Yoshiyama, James M. (Fremont, CA); Contolini, Robert J. (Lake Oswego, OR)

2000-01-01T23:59:59.000Z

403

Phase equilibrium data for development of correlations for coal fluids  

SciTech Connect (OSTI)

The overall objective of the authors' work is to develop accurate predictive methods for representations of vapor-liquid equilibria in systems encountered in coal-conversion processes. The objectives pursued in the present project include: (1) Measurements of binary vapor-liquid phase behavior data for selected solute gases (e.g., C{sub 2}H{sub 6}, CH{sub 4}) in a series of paraffinic, naphthenic, and aromatic hydrocarbon solvents to permit evaluations of interaction parameters in models for phase behavior. Solubilities of the gases in the liquid phase have been determined. (2) Evaluation of existing equations of state and other models for representations of phase behavior in systems of the type studied experimentally; development of new correlation frameworks as needed. (3) Generalization of the interaction parameters for the solutes studied to a wide spectrum of heavy solvents; presentation of final results in formats useful in the design/optimization of coal liquefaction processes.

Robinson, R.L. Jr.; Gasem, K.A.M.; Darwish, N.A.; Raff, A.M.

1991-02-01T23:59:59.000Z

404

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network [OSTI]

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

405

Interactions between Liquid-Wall Vapor and Edge Plasmas  

SciTech Connect (OSTI)

The use of liquid walls for fusion reactors could help solve problems associated with material erosion from high plasma heat-loads and neutronic activation of structures. A key issue analyzed here is the influx of impurity ions to the core plasma from the vapor of liquid side-walls. Numerical 2D transport simulations are performed for a slab geometry which approximates the edge region of a reactor-size tokamak. Both lithium vapor (from Li or SnLi walls) and fluorine vapor (from Flibe walls) are considered for hydrogen edge-plasmas in the high- and low-recycling regimes. It is found that the minimum influx is from lithium with a low-recycling hydrogen plasma, and the maximum influx occurs for fluorine with a high-recycling hydrogen plasma.

Rognlien, T D; Rensink, M E

2000-05-25T23:59:59.000Z

406

VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.  

SciTech Connect (OSTI)

The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm{sup 2} s) vs. inverse temperature (K{sup {minus}1}). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed.

GREENE,G.A.; FINFROCK,C.C.

2000-10-01T23:59:59.000Z

407

Evaluation and prevention of explosions in soil vapor extraction systems  

SciTech Connect (OSTI)

Due to the widespread and long term use of petroleum derived fuels and solvents, many areas have subsurface soils contaminated with petroleum derivatives. This contamination can migrate to groundwater, which is frequently used to supply drinking water needs. A common method of cleaning up that contamination is soil vapor extraction (SVE). SVE is a technique where several extraction wells are installed in the contaminated area, with screens in the appropriate vertical locations. The soil vapors re extracted form the wells using a positive displacement blower. To prevent this subsurface contamination from becoming air pollution, the extracted vapors are then sent to some hydrocarbon removal device, such as a carbon adsorption system or a thermal oxidizer. The data used in this investigation were collected as part of a Radian Corporation project for a client. The site is a former petroleum refinery, and the hydrocarbons are primarily gasoline and diesel.

Hower, J.W. [Radian Corp., El Segundo, CA (United States)

1995-12-31T23:59:59.000Z

408

Trace water vapor determination in nitrogen and corrosive gases using infrared spectroscopy  

SciTech Connect (OSTI)

The generation of particles in gas handling systems as a result of corrosion is a major concern in the microelectronics industry. The corrosion can be caused by the presence of trace quantities of water in corrosive gases such as HCl or HBr. FTIR spectroscopy has been shown to be a method that can be made compatible with corrosive gases and is capable of detecting low ppb levels of water vapor. In this report, the application of FTIR spectroscopy combined with classical least squares multivariate calibration to detect trace H{sub 2}O in N{sub 2}, HCl and HBr is discussed. Chapter 2 discusses the gas handling system and instrumentation required to handle corrosive gases. A method of generating a background spectrum useful to the measurements discussed in this report, as well as in other application areas such as gas phase environmental monitoring, is discussed in Chapter 3. Experimental results obtained with the first system are presented in Chapter 4. Those results made it possible to optimize the design options for the construction of a dedicate system for low ppb water vapor determination. These designs options are discussed in Chapter 5. An FTIR prototype accessory was built. In addition, a commercially available evacuable FTIR system was obtained for evaluation. Test results obtained with both systems are discussed in Chapter 6. Experiments dealing with the interaction between H{sub 2}O-HCl and potential improvements to the detection system are discussed in Chapter 7.

Espinoza, L.H.; Niemczyk, T.M. [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Chemistry; Stallard, B.R.; Garcia, M.J. [Sandia National Labs., Albuquerque, NM (United States)

1997-06-01T23:59:59.000Z

409

Testing the Adequacy of Simple Water Models at the Opposite Ends of the Phase Diagram  

SciTech Connect (OSTI)

The transferability of a few simple rigid non-polarizable water models were tested by Gibbs Ensemble Monte Carlo simulations to predict their vapor-liquid phase equilibria, and by isothermal-isobaric (Parrinello-Rahman) Monte Carlo simulations of the 13 known crystalline phases of ice. The temperature dependence of the corresponding second virial coefficients was also determined and then used to test the internal consistency of the simulated vapor-phase densities. The model predictions appear satisfactory for liquid water for ambient conditions, but they fail to mimic accurately the properties of the ice polymorphs and the orthobaric vapor phase. The major shortcomings of the models were in the overestimation by a factor of two ({approx}4-6 kJ/mol) of the internal energy difference between the high-pressure ice phases and the hexagonal phase. This unacceptable discrepancy is caused by the parameterization to reproduce the density of liquid water at ambient conditions, that accounts for the significant polarization effects in the condensed phases in terms of augmented dipole moments, with the consequent detrimental effect on the estimations of the vapor-phase properties.

Baranayai, A. [Eotvos University, Budapest, Hungary; Bartok, A. [Eotvos University, Budapest, Hungary; Chialvo, Ariel A [ORNL

2007-01-01T23:59:59.000Z

410

Balance of atmospheric water vapor over the Gulf of Mexico  

E-Print Network [OSTI]

/ / / / I / o. i + B CAP C BBJ V S TPA PZA EHA Fig. 5. Vertical distribution of the average water-vapor flux normal to the perimeter of the Gulf of Nexico during Oct-Kov-Dec 1959. Plus values are inflow in kgm/sec-mb-. m. -o-I Pi C4 I / ~-o, i...BALANCE OF ATMOSPHERIC HATER VAPOR OVER THE GULF OF MEXICO A Thesis By RALPH MORGAN HUGHES Captain, USAF Submitted to the Graduate College of the Texas A&M University in partial fulf-'llment of the rec;uirements for the degree of MASTER...

Hughes, Ralph Morgan

1967-01-01T23:59:59.000Z

411

The development of a passive dosimeter for airborne aniline vapors  

E-Print Network [OSTI]

passive sampl1ng dosimeter was designed to measure concen- trat1ons of aniline vapor in air. Diffus1on tubes of 1. 5, 3. 0 and 4. 5 cm lengths were tested under controlled conditions of relative humid1ty, air temperature and vapor concentrations. A... of Measured vs Calculated Concentrations APPENDIX D-Student-t Test on Slopes of Measured vs Calculated Data . APPENDIX E-Statistical Analysis of Four Hour Time- Weighted Average Study on 3. 0 cm Dosimeter VITA ~pa e 42 45 48 59 62 63 65 70 73...

Campbell, James Evan

1977-01-01T23:59:59.000Z

412

Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films  

SciTech Connect (OSTI)

We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x?=?0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

Yanagihara, H., E-mail: yanagiha@bk.tsukuba.ac.jp; Utsumi, Y.; Niizeki, T., E-mail: t-niizeki@imr.tohoku.ac.jp; Inoue, J.; Kita, Eiji [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan)

2014-05-07T23:59:59.000Z

413

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

414

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth  

SciTech Connect (OSTI)

We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

2014-03-01T23:59:59.000Z

415

One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering  

SciTech Connect (OSTI)

In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50?°C to 150?°C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

Liu, Ziheng, E-mail: ziheng.liu@unsw.edu.au; Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)

2014-02-03T23:59:59.000Z

416

Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge  

SciTech Connect (OSTI)

We demonstrate reversible carrier density control across the Dirac point (?n???10{sup 13?}cm{sup ?2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Lartsev, Arseniy; Yager, Tom; Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se; Kubatkin, Sergey [Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); Bergsten, Tobias [SP Technical Research Institute of Sweden, S-50115 Borås (Sweden); Tzalenchuk, Alexander [National Physical Laboratory, Teddington TW110LW (United Kingdom); Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Janssen, T. J. B. M [National Physical Laboratory, Teddington TW110LW (United Kingdom); Yakimova, Rositza [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)

2014-08-11T23:59:59.000Z

417

Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon  

SciTech Connect (OSTI)

Thulium silicide thin films were grown on (100) and (111) Si by evaporation of Tm metal and Si layers and annealing in a vacuum. Electron microscopy and x-ray diffraction results showed that the TmSi{sub 2{minus}x} layers are of high crystalline quality grown epitaxially on Si. Electrical resistivity measurements showed that TmSi{sub 2{minus}x} layers are metallic exhibiting magnetic ordering below 3 K. {copyright} {ital 1997 American Institute of Physics.}

Travlos, A.; Salamouras, N.; Boukos, N. [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310] [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310

1997-02-01T23:59:59.000Z

418

(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties  

SciTech Connect (OSTI)

Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

Bouravleuv, A. D., E-mail: bour@mail.ioffe.ru; Nevedomskii, V. N. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Ubyivovk, E. V. [St. Petersburg State University (Russian Federation)] [St. Petersburg State University (Russian Federation); Sapega, V. F. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Khrebtov, A. I. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)] [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-08-15T23:59:59.000Z

419

Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates  

SciTech Connect (OSTI)

In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo [Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico D.F., 07000 (Mexico); Pulzara Mora, Alvaro [Universidad Nacional de Colombia - Sede Manizales, A. A. 127 (Colombia); Mendez Garcia, Victor H. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4a Seccion, C.P. 78210, San Luis Potosi (Mexico)

2007-02-09T23:59:59.000Z

420

Growth of InGaAsP by molecular beam epitaxy  

SciTech Connect (OSTI)

Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x-ray diffraction, reflection electron diffraction, and Hall measurements. Lattice matching was achieved and room-temperature mobilities up to 4600 cm/sup 2/ V/sup -1/ s/sup -1/ were measured.

Holah, G.D.; Eisele, F.L.; Meeks, E.L.; Cox, N.W.

1982-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers.  

SciTech Connect (OSTI)

InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 mu m) lattice-matched epilayers of InP, Gain As, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness. GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2 degrees misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed.

Overberg, Mark E.; Cederberg, Jeffrey George

2010-09-01T23:59:59.000Z

422

The correlation of epitaxial graphene properties and morphology of SiC (0001)  

SciTech Connect (OSTI)

The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

Guo, Y.; Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L. [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, R. [Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2014-01-28T23:59:59.000Z

423

Experimental study of the distribution of alloying elements after the formation of epitaxial ferrite upon cooling in a low-carbon steel  

SciTech Connect (OSTI)

The distributions of carbon and substitutional elements in a low-carbon steel during the formation of epitaxial ferrite on cooling after intercritical annealing have been studied by electron probe microanalysis (EPMA). The analysis has shown that the formation of epitaxial ferrite takes place with a partial redistribution of alloying elements between the epitaxial ferrite and the austenite. This redistribution of alloying elements causes compositional gradients in the epitaxial ferrite that lead to a different etching behaviour with respect to the intercritical ferrite. Contrary to Thermo-Calc predictions, a distinct partitioning behaviour of silicon has been observed.

Santofimia, M.J., E-mail: M.J.SantofimiaNavarro@tudelft.nl [Materials Innovation Institute (M2i), Mekelweg 2, 2628 CD Delft (Netherlands); Department of Materials Science and Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft (Netherlands); Kwakernaak, C.; Sloof, W.G. [Department of Materials Science and Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft (Netherlands); Zhao, L. [Materials Innovation Institute (M2i), Mekelweg 2, 2628 CD Delft (Netherlands); Department of Materials Science and Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft (Netherlands); Sietsma, J. [Department of Materials Science and Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft (Netherlands)

2010-10-15T23:59:59.000Z

424

Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

425

Crystallographic Dependence of Visible-Light Photochemistry in Epitaxial  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases on &gamma;-Al2O3.WinterCrystal StructurewithMonolayer.TiO2-xNx

426

Metamorphosis: Phases of UF{sub 6}  

SciTech Connect (OSTI)

A 15-minute videotape is presented. The subject matter is 150 grams of UF{sub 6} sealed in a glass tube. Close-up views show the UF{sub 6} as phase changes are effected by the addition or removal of heat from the closed system. The solid-to-liquid transition is shown as heat is added, both slowly and rapidly. The solid phases which result from freezing and from desublimation are contrasted. In the solid state, uranium hexafluoride is a nearly-white, dense crystalline solid. The appearance of this solid depends on whether it is formed by freezing from the liquid or by desublimation from the vapor phase. If frozen from the liquid, the solid particles take the form of irregularly shaped coarse grains, while the solid product of desublimation tends to be a rather formless mass without individually distinguishable particles. The changes in state are presented in terms of the UF{sub 6} phase diagram.

Dyer, R.H. [Department of Energy, Oak Ridge, TN (United States)

1991-12-31T23:59:59.000Z

427

Alpha phase precipitation from phase-separated beta phase in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Alpha phase precipitation from phase-separated beta phase in a model Ti-Mo-Al alloy studied by direct coupling of transmission Alpha phase precipitation from phase-separated beta...

428

A model of vapor-liquid equilibria in acid gas: Aqueous alkanolamine systems using the electrolyte-NRTL equation  

SciTech Connect (OSTI)

In this paper a thermodynamically-consistent model is developed for representing vapor-liquid equilibria in the acid gas (H/sub 2/S, CO/sub 2/)-alkanolamine-water system. The model accounts for chemical equilibria in a rigorous manner. Activity coefficients are represented with the Electrolyte-NRTL equation, treating both long-range ion-ion interactions and short-range interactions between all true liquid phase species. Both water and alkanolamine are treated as solvents. Adjustable parameters of the Electrolyte-NRTL equation, representing short-range binary interactions, are fitted primarily on binary and ternary system VLE data. Calculated vapor pressures of H/sub 2/S or CO/sub 2/ over aqueous solutions of monoethanolamine or diethanolamine generally agree with published experimental data within 10 percent over the temperature range 25-120{sup 0}C. No more than two additional parameters are adjusted on quartenary system VLE data to provide a good representation of H/sub 2/S and CO/sub 2/ vapor pressures over the same alkanolamine solutions.

Austgen, D.M.; Rochelle, G.T. (Univ. of Texas at Austin, TX (US)); (Peng, X. (Sinopen Beijing Design Institute (US)); Chen, C.C. (Aspen Technology, Inc. TX (US)))

1988-01-01T23:59:59.000Z

429

Measuring Spatial Variability of Vapor Flux to Characterize Vadose-zone VOC Sources: Flow-cell Experiments  

SciTech Connect (OSTI)

A method termed vapor-phase tomography has recently been proposed to characterize the distribution of volatile organic contaminant mass in vadose-zone source areas, and to measure associated three-dimensional distributions of local contaminant mass discharge. The method is based on measuring the spatial variability of vapor flux, and thus inherent to its effectiveness is the premise that the magnitudes and temporal variability of vapor concentrations measured at different monitoring points within the interrogated area will be a function of the geospatial positions of the points relative to the source location. A series of flow-cell experiments was conducted to evaluate this premise. A well-defined source zone was created by injection and extraction of a non-reactive gas (SF6). Spatial and temporal concentration distributions obtained from the tests were compared to simulations produced with a mathematical model describing advective and diffusive transport. Tests were conducted to characterize both areal and vertical components of the application. Decreases in concentration over time were observed for monitoring points located on the opposite side of the source zone from the local–extraction point, whereas increases were observed for monitoring points located between the local–extraction point and the source zone. The results illustrate that comparison of temporal concentration profiles obtained at various monitoring points gives a general indication of the source location with respect to the extraction and monitoring points.

Mainhagu, Jon; Morrison, C.; Truex, Michael J.; Oostrom, Martinus; Brusseau, Mark

2014-10-20T23:59:59.000Z

430

Amine functionalization by initiated chemical vapor deposition (iCVD) for interfacial adhesion and film cohesion  

E-Print Network [OSTI]

Amine functional polymer thin films provide a versatile platform for subsequent functionalization because of their diverse reactivity. Initiated chemical vapor deposition (iCVD) is a polymer chemical vapor deposition ...

Xu, Jingjing, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

431

Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics  

E-Print Network [OSTI]

Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

2001-01-01T23:59:59.000Z

432

Metalorganic chemical vapor deposition of carbon-free ZnO using...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor. Metalorganic chemical vapor deposition of carbon-free...

433

Heat transfer during film condensation of potassium vapor on a horizontal plate  

E-Print Network [OSTI]

The object of the investigation is to analyze the following two features of heat transfer during condensation of potassium vapor: a. Heat transfer during film condensation of a pure saturated potassium vapor on a horizontal ...

Meyrial, Paul M.

1968-01-01T23:59:59.000Z

434

E-Print Network 3.0 - airs water vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

water vapor Search Powered by Explorit Topic List Advanced Search Sample search results for: airs water vapor Page: << < 1 2 3 4 5 > >> 1 A laboratory experiment from the Little...

435

Method and apparatus to measure vapor pressure in a flow system  

DOE Patents [OSTI]

The present invention is directed to a method for determining, by a condensation method, the vapor pressure of a material with a known vapor pressure versus temperature characteristic, in a flow system particularly in a mercury isotope enrichment process.

Grossman, Mark W. (Belmont, MA); Biblarz, Oscar (Swampscott, MA)

1991-01-01T23:59:59.000Z

436

Energy Saving in Distillation Using Structured Packing and Vapor Recompression  

E-Print Network [OSTI]

difference across the column. VRC uses hot compressed overhead vapors, instead of steam, to heat the reboiler. Cost savings are highest when the pressure ratio for the compressor is low. The pressure ratio depends on the boiling point difference of top...

Hill, J.H.

437

DIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages  

E-Print Network [OSTI]

a reality. Epi- taxial diamond has been grown on diamond and cubic-BN. Polycrystalline diamond films haveDIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages by Huimin Liu David S. Dandy of high-quality diamond coatings on preshaped parts and synthesis of free-standing shapes of diamond

Dandy, David

438

Experimental Study of Water Vapor Adsorption on Geothermal  

E-Print Network [OSTI]

Geothermal Program under Department of Energy Grant No. DE-FG07-90IDI2934,and by the Department of PetroleumSGP-TR-148 Experimental Study of Water Vapor Adsorption on Geothermal Reservoir Rocks Shubo Shang Engineering, Stanford University Stanford Geothermal Program Interdisciplinary Research in Engineering

Stanford University

439

Fatigue Resistance of Asphalt Mixtures Affected by Water Vapor Movement  

E-Print Network [OSTI]

This dissertation has two key objectives: the first objective is to develop a method of predicting and quantifying the amount of water that can enter into a pavement system by vapor transport; the second objective is to identify to which extent...

Tong, Yunwei

2013-11-08T23:59:59.000Z

440

A transient model for a cesium vapor thermionic converter. [Cs  

SciTech Connect (OSTI)

This paper presents an analytical model for simulating the transient and steady-state operation of cesium vapor thermionic converters. A parametric analysis is performed to assess the transient response of the converter to changes in fission power and width of interelectrode gap. The model optimizes the converter performance for maximum electric power to the load.(AIP)

El-Genk, M.S.; Murray, C.S.; Chaudhuri, S. (Institute for Space Nuclear Power Studies, Department of Chemical and Nuclear Engineering, The University of New Mexico, Albuquerque, New Mexico (USA))

1991-01-10T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

CVD CNT CNT (Vapor-grown carbon fiber, VGCF)  

E-Print Network [OSTI]

CNT CNT CVD CNT CNT (Vapor-grown carbon fiber, VGCF) 10001300 CNT CVD Smalley CO 24 CCVD 1 #12; 27 mm 3% 200 sccm 800 10 10 Torr 300 sccm Ethanol tank Hot bath boat Ar/H2 Ar or Ethanol tank Hot bath Ethanol tank Hot bath Pressure gauge Maindraintube Subdraintube

Maruyama, Shigeo

442

OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL  

E-Print Network [OSTI]

OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL RESERVOIRS CONSIDERING ADSORPTION. Because of the costs associated with injection, optimizing an injection program involves not only of the injectate can become available for production and at the same time optimize the present worth of the project

Stanford University

443

High-resolution terahertz atmospheric water vapor continuum measurements  

E-Print Network [OSTI]

High-resolution terahertz atmospheric water vapor continuum measurements David M. Slocum,* Thomas M such as pollution monitoring and the detection of energetic chemicals using remote sensing over long path lengths through the atmosphere. Although there has been much attention to atmospheric effects over narrow

Massachusetts at Lowell, University of

444

UNCORRECTEDPROOF 2 Vaporization, fusion and sublimation enthalpies of the  

E-Print Network [OSTI]

UNCORRECTEDPROOF 2 Vaporization, fusion and sublimation enthalpies of the 3 dicarboxylic acids from of Chemistry and Biochemistry, University of Missouri-St. Louis, 8001 Natural Bridge, St. Louis, MO 63121, USA observed previously in the sublimation enthalpies of these compounds. The results are dis- 16 cussed

Chickos, James S.

445

Method for removing metal vapor from gas streams  

DOE Patents [OSTI]

A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines. 13 figs.

Ahluwalia, R.K.; Im, K.H.

1996-04-02T23:59:59.000Z

446

Method for removing metal vapor from gas streams  

DOE Patents [OSTI]

A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines.

Ahluwalia, R. K. (6440 Hillcrest Dr., Burr Ridge, IL 60521); Im, K. H. (925 Lehigh Cir., Naperville, IL 60565)

1996-01-01T23:59:59.000Z

447

Plasma Kinetics in Electrical Discharge in Mixture of Air, Water and Ethanol Vapors for Hydrogen Enriched Syngas Production  

E-Print Network [OSTI]

The complex theoretical and experimental investigation of plasma kinetics of the electric discharge in the mixture of air and ethanol-water vapors is carried out. The discharge was burning in the cavity, formed by air jets pumping between electrodes, placed in aqueous ethanol solution. It is found out that the hydrogen yield from the discharge is maximal in the case when ethanol and water in the solution are in equal amounts. It is shown that the hydrogen production increases with the discharge power and reaches the saturation at high value. The concentrations of the main stable gas-phase components, measured experimentally and calculated numerically, agree well in the most cases.

Shchedrin, A I; Ryabtsev, A V; Chernyak, V Ya; Yukhymenko, V V; Olszewski, S V; Naumov, V V; Prysiazhnevych, I V; Solomenko, E V; Demchina, V P; Kudryavtsev, V S

2008-01-01T23:59:59.000Z

448

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition  

SciTech Connect (OSTI)

R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

2014-05-07T23:59:59.000Z

449

Vapor-liquid equilibrium data at 298. 15 K for binary systems containing methyl acetate or methanol with 2-methoxyethanol or 2-ethoxyethanol  

SciTech Connect (OSTI)

Isothermal vapor-liquid equilibria were measured at 298.15 K for the systems containing methyl acetate or methanol with 2-methoxyethanol or 2-ethoxyethanol. Mixtures containing methanol show a behavior close to ideal, while those containing methyl acetate exhibit positive deviations from ideality and satisfy the Redlich-Kister thermodynamic consistency test. The liquid-phase activity coefficients were fitted by using the van Laar, Wilson, NRTL, and NRTL-m (a modified NRTL equation) equations.

Martin, M.C.; Cocero, M.J.; Mato, F.B. (Univ. de Valladolid (Spain))

1994-07-01T23:59:59.000Z

450

Installation and Operation of Sorbathene Solvent Vapor Recovery Units to Recover and Recycle Volatile Organic Compounds at Operating Sites within the Dow Chemical Company  

E-Print Network [OSTI]

because of the history of fires caused by exothermic heat of adsorption and high flammability when adsorption occurs during a long cycle time'. Three SORBATHENE units utilizing activated carbon with a short cycle time to limit temperature rise have... to the potential presence of oxygen in the vapor phase and the increased reactivity of the chemicals on the catalytic surface of the adsorbent. The extent of temperature rises and pressure swings are critical parameters. The adsorption phenomena is exothermic...

Hall, T. L.; Larrinaga, L.

451

Correlation for the Vapor Pressure of Heavy Water From the Triple Point to the Critical Point  

E-Print Network [OSTI]

Correlation for the Vapor Pressure of Heavy Water From the Triple Point to the Critical Point Allan the vapor pressure of heavy water (D2O) from its triple point to its critical point. This work takes Institute of Physics. Key words: D2O; heavy water; ITS-90; vapor pressure. Contents 1. Introduction

Magee, Joseph W.

452

The control of mercury vapor using biotrickling filters Ligy Philip a,b,1  

E-Print Network [OSTI]

The control of mercury vapor using biotrickling filters Ligy Philip a,b,1 , Marc A. Deshusses b August 2007 Abstract The feasibility of using biotrickling filters for the removal of mercury vapor from. In particular, the biotrickling filters with sulfur oxidizing bacteria were able to remove 100% of mercury vapor

453

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe  

E-Print Network [OSTI]

, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors. T wo-generation electronic and optoelectronic devices. Although most research has focused on 2D transition metal

Geohegan, David B.

454

A NOVEL VAPOR-PHASE PROCESS FOR DEEP DESULFURIZATION OF NAPHTHA/DIESEL  

SciTech Connect (OSTI)

Tier 2 regulations issued by the U.S. Environmental Protection Agency (EPA) require a substantial reduction in the sulfur content of gasoline. Similar regulations have been enacted for the sulfur level in on-road diesel and recently off-road diesel. The removal of this sulfur with existing and installed technology faces technical and economic challenges. These challenges created the opportunity for new emerging technologies. Research Triangle Institute (RTI) with subcontract support from Kellogg Brown & Root, Inc., (KBR) used this opportunity to develop RTI's transport reactor naphtha desulfurization (TReND) process. Starting with a simple conceptual process design and some laboratory results that showed promise, RTI initiated an accelerated research program for sorbent development, process development, and marketing and commercialization. Sorbent development has resulted in the identification of an active and attrition resistant sorbent that has been prepared in commercial equipment in 100 lb batches. Process development has demonstrated both the sulfur removal performance and regeneration potential of this sorbent. Process development has scaled up testing from small laboratory to pilot plant transport reactor testing. Testing in the transport reactor pilot plant has demonstrated the attrition resistance, selective sulfur removal activity, and regeneration activity of this sorbent material. Marketing and commercialization activities have shown with the existing information that the process has significant capital and operating cost benefits over existing and other emerging technologies. The market assessment and analysis provided valuable feedback about the testing and performance requirements for the technical development program. This market analysis also provided a list of potential candidates for hosting a demonstration unit. Although the narrow window of opportunity generated by the new sulfur regulations and the conservative nature of the refining industry slowed progress of the demonstration unit, negotiations with potential partners are proceeding for commercialization of this process.

B.S. Turk; R.P. Gupta; S.K. Gangwal

2003-06-30T23:59:59.000Z

455

Bundles of carbon nanotubes generated by vapor-phase growth Maohui Ge and Klaus Sattler  

E-Print Network [OSTI]

show that another hollow carbon structure is possible to form under such high density conditions. We report the observation of assemblies of carbon nano- tubes in the form of bundles. The bundles. It is located horizontally on the flat graphite substrate. It is separated from other deposited carbon nano

Sattler, Klaus

456

Vapor-Phase Metalation by Atomic Layer Deposition in a Metal-Organic Framework  

E-Print Network [OSTI]

encompass deposition onto micro- and nanopowders14 and coating of nanoparticle films15 as well as aerogel coating of porous materials that exhibit ultrahigh-aspect ratios.12,13 To date, some striking examples

457

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed RouteNanotube Templated

458

Absolute integrated intensities of vapor-phase hydrogen peroxide (H202) in  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmrAre the Effects ofAbout ScienceAbout Oak RidgeAboutthe

459

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier  

E-Print Network [OSTI]

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in 1100 and 1120 direction by tungsten masks3 to prevent the in-diffusion of silicon and oxygen atoms in the overgrown GaN, which

Nabben, Reinhard

460

Molecular-beam epitaxy growth of strontium thiogallate T. Yang, B. K. Wagner, M. Chaichimansour, W. Park, Z. L. Wang,a)  

E-Print Network [OSTI]

Molecular-beam epitaxy growth of strontium thiogallate T. Yang, B. K. Wagner, M. Chaichimansour, W-beam epitaxy growth and characterization of cerium doped strontium thiogallate SrGa2S4:Ce thin film phosphors growth of cerium doped strontium thiogallate on quartz substrates was first reported in 1994.3 Here we

Wang, Zhong L.

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Atomic-Scale Investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling Microscopy and Spectroscopy  

E-Print Network [OSTI]

Atomic-Scale Investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling ReceiVed: June 26, 2010 Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si

Kim, Sehun

462

hal-00130698,version1-13Feb2007 Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.  

E-Print Network [OSTI]

hal-00130698,version1-13Feb2007 Electronic structure of epitaxial graphene layers on SiC: effect integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene

Paris-Sud XI, Université de

463

Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface F.Varchon, P.Mallet, J.-Y.Veuillen, and L.Magaud  

E-Print Network [OSTI]

Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface F.Varchon, P.Mallet, J) Interaction with a substrate can modify the graphene honeycomb lattice and thus alter its out- standing properties. This could be particularly true for epitaxial graphene where the carbon layers are grown from

Paris-Sud XI, Université de

464

Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures  

SciTech Connect (OSTI)

Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of uranium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T.

1994-10-01T23:59:59.000Z

465

Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures  

SciTech Connect (OSTI)

Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of titanium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T. [Lawrence Livermore National Lab., CA (United States)

1994-12-31T23:59:59.000Z

466

Tank vapor mitigation requirements for Hanford Tank Farms  

SciTech Connect (OSTI)

Westinghouse Hanford Company has contracted Los Alamos Technical Associates to listing of vapors and aerosols that are or may be emitted from the High Level Waste (HLW) tanks at Hanford. Mitigation requirements under Federal and State law, as well as DOE Orders, are included in the listing. The lists will be used to support permitting activities relative to tank farm ventilation system up-grades. This task is designated Task 108 under MJB-SWV-312057 and is an extension of efforts begun under Task 53 of Purchase Order MPB-SVV-03291 5 for Mechanical Engineering Support. The results of that task, which covered only thirty-nine tanks, are repeated here to provide a single source document for vapor mitigation requirements for all 177 HLW tanks.

Rakestraw, L.D.

1994-11-15T23:59:59.000Z

467

Piston pump and method of reducing vapor lock  

DOE Patents [OSTI]

A pump includes a housing defining a cavity, at least one bore, a bore inlet, and a bore outlet. The bore extends from the cavity to the outlet and the inlet communicates with the bore at a position between the cavity and the outlet. A crankshaft is mounted in supports and has an eccentric portion disposed in the cavity. The eccentric portion is coupled to a piston so that rotation of the crankshaft reciprocates the piston in the bore between a discharge position an intake position. The bore may be offset from an axis of rotation to reduce bending of the piston during crankshaft rotation. During assembly of the pump, separate parts of the housing can be connected together to facilitate installation of internal pumping components. Also disclosed is a method of reducing vapor lock by mixing vapor and liquid portions of a substance and introducing the mixture into a piston bore.

Phillips, Benjamin A. (Benton Harbor, MI); Harvey, Michael N. (DeSoto, TX)

2000-02-15T23:59:59.000Z

468

Piston pump and method of reducing vapor lock  

DOE Patents [OSTI]

A pump includes a housing defining a cavity, at least one bore, a bore inlet, and a bore outlet. The bore extends from the cavity to the outlet and the inlet communicates with the bore at a position between the cavity and the outlet. A crankshaft is mounted in supports and has an eccentric portion disposed in the cavity. The eccentric portion is coupled to a piston so that rotation of the crankshaft reciprocates the piston in the bore between a discharge position an intake position. The bore may be offset from an axis of rotation to reduce bending of the piston during crankshaft rotation. During assembly of the pump, separate parts of the housing can be connected together to facilitate installation of internal pumping components. Also disclosed is a method of reducing vapor lock by mixing vapor and liquid portions of a substance and introducing the mixture into a piston bore.

Phillips, Benjamin A. (Benton Harbor, MI); Harvey, Michael N. (DeSoto, TX)

2001-01-30T23:59:59.000Z

469

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents [OSTI]

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Riley, B.; Szreders, B.E.

1988-04-26T23:59:59.000Z

470

Water vapor and the dynamics of climate changes  

E-Print Network [OSTI]

Water vapor is not only Earth's dominant greenhouse gas. Through the release of latent heat when it condenses, it also plays an active role in dynamic processes that shape the global circulation of the atmosphere and thus climate. Here we present an overview of how latent heat release affects atmosphere dynamics in a broad range of climates, ranging from extremely cold to extremely warm. Contrary to widely held beliefs, atmospheric circulation statistics can change non-monotonically with global-mean surface temperature, in part because of dynamic effects of water vapor. For example, the strengths of the tropical Hadley circulation and of zonally asymmetric tropical circulations, as well as the kinetic energy of extratropical baroclinic eddies, can be lower than they presently are both in much warmer climates and in much colder climates. We discuss how latent heat release is implicated in such circulation changes, particularly through its effect on the atmospheric static stability, and we illustrate the circul...

Schneider, Tapio; Levine, Xavier

2009-01-01T23:59:59.000Z

471

Vapor-liquid equilibria of hydrocarbons and fuel oxygenates. 2  

SciTech Connect (OSTI)

Vapor-liquid equilibrium data for methyl tert-butyl ether (MTBE) + 1-heptene, MTBE + four-component gasoline prototype, ethanol + four-component gasoline prototype, and separately MTBE and ethanol with the Auto/Oil Air Quality Improvement Research Gasoline Blend A are reported. Small additions of MTBE have a very small effect on the total equilibrium pressure of this gasoline blend, and at most temperatures will decrease this pressure. In contrast, small additions of ethanol to this gasoline blend result in a significant increase in the equilibrium pressure at all temperatures. Analysis shows that the vapor-liquid equilibrium data for the MTBE-containing systems are easily correlated using a modified Peng-Robinson equation of state with conventional van der Waals one-fluid mixing rules. Data for mixtures containing ethanol cannot be accurately correlated in this way.

Bennett, A.; Lamm, S.; Orbey, H.; Sandler, S.I. (Univ. of Delaware, Newark (United States))

1993-04-01T23:59:59.000Z

472

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents [OSTI]

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

1989-01-01T23:59:59.000Z

473

System for the removal of contaminant soil-gas vapors  

DOE Patents [OSTI]

A system extracts contaminated vapors from soil or other subsurface regions by using changes in barometric pressure to operate sensitive check valves that control air entry and removal from wells in the ground. The system creates an efficient subterranean flow of air through a contaminated soil plume and causes final extraction of the contaminants from the soil to ambient air above ground without any external energy sources.

Weidner, Jerry R. (Iona, ID); Downs, Wayne C. (Sugar City, ID); Kaser, Timothy G. (Ammon, ID); Hall, H. James (Idaho Falls, ID)

1997-01-01T23:59:59.000Z

474

System for the removal of contaminant soil-gas vapors  

DOE Patents [OSTI]

A system extracts contaminated vapors from soil or other subsurface regions by using changes in barometric pressure to operate sensitive check valves that control air entry and removal from wells in the ground. The system creates an efficient subterranean flow of air through a contaminated soil plume and causes final extraction of the contaminants from the soil to ambient air above ground without any external energy sources. 4 figs.

Weidner, J.R.; Downs, W.C.; Kaser, T.G.; Hall, H.J.

1997-12-16T23:59:59.000Z

475

High average power magnetic modulator for metal vapor lasers  

DOE Patents [OSTI]

A three-stage magnetic modulator utilizing magnetic pulse compression designed to provide a 60 kV pulse to a copper vapor laser at a 4.5 kHz repetition rate is disclosed. This modulator operates at 34 kW input power. The circuit includes a step up auto transformer and utilizes a rod and plate stack construction technique to achieve a high packing factor.

Ball, Don G. (Livermore, CA); Birx, Daniel L. (Oakley, CA); Cook, Edward G. (Livermore, CA); Miller, John L. (Livermore, CA)

1994-01-01T23:59:59.000Z

476

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces  

SciTech Connect (OSTI)

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Coux, P. de [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Bachelet, R.; Fontcuberta, J.; Sánchez, F., E-mail: fsanchez@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); Warot-Fonrose, B. [CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Skumryev, V. [Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain); Lupina, L.; Niu, G.; Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

2014-07-07T23:59:59.000Z

477

Fundamental optical properties of InN grown by epitaxial lateral overgrowth method  

SciTech Connect (OSTI)

Optical properties of InN grown by the epitaxial lateral overgrowth (ELO) method have been studied using photoluminescence (PL) and excitation-correlation (EC) measurements. The PL spectrum is analyzed by free-electron recombination band (FERB) model, which shows that the ELO sample has a very low background carrier concentration (n=5.5*10{sup 16}[cm{sup ?3]}). EC measurements show that the dependences of the band gap renormalization and Auger effect on the carrier concentrations are similar in spite of the different physical origins.

Kametani, Tatsuma; Kamimura, Jumpei; Inose, Yuta; Kunugita, Hideyuki; Kikuchi, Akihiko; Kishino, Katsumi; Ema, Kazuhiro [Department of Engineering and Applied Science, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

2013-12-04T23:59:59.000Z

478

Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene  

SciTech Connect (OSTI)

We study the broadband optical conductivity and ultrafast carrier dynamics of epitaxial graphene in the few-layer limit. Equilibrium spectra of nominally buffer, monolayer, and multilayer graphene exhibit significant terahertz and near-infrared absorption, consistent with a model of intra- and interband transitions in a dense Dirac electron plasma. Non-equilibrium terahertz transmission changes after photoexcitation are shown to be dominated by excess hole carriers, with a 1.2-ps mono-exponential decay that refects the minority-carrier recombination time.

Choi, Hyunyong; Borondics, Ferenc; Siegel, David A.; Zhou, Shuyun Y.; Martin, Michael C.; Lanzara, Alessandra; Kaindl, Robert A.

2009-03-26T23:59:59.000Z

479

VAPOR SPACE AND LIQUID/AIR INTERFACECORROSION TESTS  

SciTech Connect (OSTI)

The phenomena of vapor space corrosion and liquid/air interface corrosion of carbon steel in simulated liquid waste environments have been investigated. Initial experiments have explored the hypothesis that vapor space corrosion may be accelerated by the formation of a corrosive electrolyte on the tank wall by a process of evaporation of relatively warmer waste and condensation of the vapor on the relatively cooler tank wall. Results from initial testing do not support the hypothesis of electrolyte transport by evaporation and condensation. The analysis of the condensate collected by a steel specimen suspended over a 40 C simulated waste solution showed no measurable concentrations of the constituents of the simulated solution and a decrease in pH from 14 in the simulant to 5.3 in the condensate. Liquid/air interface corrosion was studied as a galvanic corrosion system, where steel at the interface undergoes accelerated corrosion while steel in contact with bulk waste is protected. The zero-resistance-ammeter technique was used to measure the current flow between steel specimens immersed in solutions simulating (1) the high-pH bulk liquid waste and (2) the expected low-pH meniscus liquid at the liquid/air interface. Open-circuit potential measurements of the steel specimens were not significantly different in the two solutions, with the result that (1) no consistent galvanic current flow occurred and (2) both the meniscus specimen and bulk specimen were subject to pitting corrosion.

Zapp, P.; Hoffman, E.

2009-11-09T23:59:59.000Z

480

Program plan for the resolution of tank vapor issues  

SciTech Connect (OSTI)

Since 1987, workers at the Hanford Site waste tank farms in Richland, Washington, have reported strong odors emanating from the large, underground high-level radioactive waste storage tanks. Some of these workers have complained of symptoms (e.g., headaches, nausea) related to the odors. In 1992, the U.S. Department of Energy, which manages the Hanford Site, and Westinghouse Hanford Company determined that the vapor emissions coming from the tanks had not been adequately characterized and represented a potential health risk to workers in the immediate vicinity of the tanks. At that time, workers in certain areas of the tank farms were required to use full-face, supplied-breathing-air masks to reduce their exposure to the fugitive emissions. While use of supplied breathing air reduced the health risks associated with the fugitive emissions, it introduced other health and safety risks (e.g., reduced field of vision, air-line tripping hazards, and heat stress). In 1992, an aggressive program was established to assure proper worker protection while reducing the use of supplied breathing air. This program focuses on characterization of vapors inside the tanks and industrial hygiene monitoring in the tank farms. If chemical filtration systems for mitigation of fugitive emissions are deemed necessary, the program will also oversee their design and installation. This document presents the plans for and approach to resolving the Hanford Site high-level waste tank vapor concerns. It is sponsored by the Department of Energy Office of Environmental Restoration and Waste Management.

Osborne, J.W.; Huckaby, J.L.

1994-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor phase epitaxy" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

ESA DUE GlobVapour water vapor products: Validation  

SciTech Connect (OSTI)

The main objective of the European Space Agency (ESA) Data User Element (DUE) GlobVapour project was the development of multi-annual global water vapor data sets. Since water vapour is a key climate variable it is important to have a good understanding of its behavior in the climate system. The ESA DUE GlobVapour project provides water vapor data, including error estimates, based on carefully calibrated and inter-calibrated satellite radiances in response to user requirements for long time series satellite observations. ESA DUE GlobVapour total columnar water vapor (TCWV) products derived from GOME/SCIA/GOME-2 (1996-2008) and SSM/I+MERIS (2003-2008) have been validated for the mentioned period, using satellite-based (AIRS, ATOVS) and ground-based measurements (radiosondes and microwave radiometer). The validation results are discussed in the following. The technical specifications on bias (1 kg/m{sup 2} for SSMI+MERIS and 2 kg/m{sup 2} for GOME/SCIA/GOME-2) are generally met. For more information, documents and data download follow the link: www.globvapour.info.

Schneider, Nadine; Schroeder, Marc; Stengel, Martin [Deutscher Wetterdienst (DWD), KU22, Frankfurter Str. 135, 63067 Offenbach a. M (Germany); Lindstrot, Ramus; Preusker, Rene [Freie Universitaet Berlin (FUB), Carl-Heinrich-Becker-Weg 6-10, 12165 Berlin (Germany); Collaboration: ESA DUE GlobVapour Consortium

2013-05-10T23:59:59.000Z

482

Vapor-liquid equilibria for methanol + tetraethylene glycol dimethyl ether  

SciTech Connect (OSTI)

Vapor-liquid equilibrium (P-T-x) for the methanol + tetraethylene glycol dimethyl ether binary system were obtained by the static method in the range of temperatures from 293.15 to 423.15 K at 10 K intervals. The modified vapor pressure apparatus used is described. The Kuczynsky method was used to calculate the liquid and vapor composition and the activity coefficients of methanol from the initial composition of the sample and the measured pressure and temperature. The results were correlated by the NRTL and UNIQUAC temperature dependent activity coefficient models. This system shows nearly ideal behavior at 323.15 K, but positive deviations from ideality at lower temperatures and negative deviations at higher temperatures are observed. The activity coefficients become more negative with the increase in temperature and mole fraction of methanol. The excess molar enthalpy using the Gibss-Helmholtz equation and the NRTL and UNIQUAC parameters were calculated at 303.15 K and compared with experimental data. This binary system shows promise as a working pair for high-temperature heat pump applications.

Esteve, X.; Chaudhari, S.K.; Coronas, A. [Univ. Rovira i Virgili, Tarragona (Spain). Dept. of Electrical and Mechanical Engineering

1995-11-01T23:59:59.000Z

483

Methanol vaporization and injection system for internal combustion engine  

SciTech Connect (OSTI)

An engine equipped with an alcohol vaporization injection system operates as a four stroke cycle diesel engine that transfers the heat of exiting exhaust gases and cylinder head walls to the fuel. The engine runs on alcohol. The alcohol becomes vaporized and its pressure is high enough so that when a valve is opened between the high pressure fuel line and the combustion chamber (when it is at the peak of its compression ratio) enough alcohol will enter the combustion chamber to allow proper combustion. The overall advantages to this type of alcohol vaporization injection system is that it adds relatively few new mechanisms to the spark ignition four cycle internal combustion engine to enable it to operate as a diesel engine with a high thermal efficiency. This alcohol injection system exploits the engine's need for greater volumes of alcohol caused by the alcohol's relatively low heat of combustion (When compared to gasoline) by using this greater volume of fuel to return greater quantities of heat back to the engine to a much greater degree than other fuels can.

Bayley, R.I.

1980-05-06T23:59:59.000Z

484

Method of and apparatus for measuring vapor density  

DOE Patents [OSTI]

Apparatus and method are disclosed which determine the concentration of an individual component, such as water vapor, of a multi-component mixture, such as a gaseous mixture for cooling a nuclear reactor. A hygrometer apparatus includes an infrared source for producing a broadband infrared energy beam that includes a strong water vapor absorption band and a weak water vapor absorption region. The beam is chopped to select infrared pulses. A temporally first pulse has a wavelength in the weakly absorbing region, a temporally second pulse has a wavelength in the strong band and a temporally third pulse has a wavelength in the weakly absorbing region. A fourth reference pulse representing background radiation is interposed in such chopped pulses. An indium arsenide infrared sensor is responsive to the pulses for generating an output signal in proportion to an equation given in the patent where N1 is proportional to the transmission through the sample of the first signal, N4 is related to the background radiation, and [K2 (N2-N4) + K3 (N3-N4)] is the time-weighted average of the transmission through the sample of the second and third pulses applicable at the time of the second pulse, with the reference pulse N4 being subtracted in each case to render the ratio independent of variations in the background radiation. 11 figs.

Nelson, L.D.; Cerni, T.A.

1989-10-17T23:59:59.000Z

485

Method of and apparatus for measuring vapor density  

DOE Patents [OSTI]

Apparatus and method determine the concentration of an individual component, such as water vapor, of a multi-component mixture, such as a gaseous mixture for cooling a nuclear reactor. A hygrometer apparatus includes an infrared source for producing a broadband infrared energy beam that includes a strong water vapor absorption band and a weak water vapor absorption region. The beam is chopped to select infrared pulses. A temporally first pulse has a wavelength in the weakly absorbing region, a temporally second pulse has a wavelength in the strong band and a temporally third pulse has a wavlength in the weakly absorbing region. A fourth reference pulse representing background radiation is interposed in such chopped pulses. An indium arsenide infrared sensor is responsive to the pulses for generating an output signal in proportion to: ##EQU1## where N1 is proportional to the transmission through the sample of the first signal, N4 is related to the background radiation, and [K2 (N2-N4)+K3 (N3-N4)] is the time-weighted average of the transmission through the sample of the second and third pulses applicable at the time of the second pulse, with the reference pulse N4 being subtracted in each case to render the ratio independent of variations in the background radiation.

Nelson, Loren D. (Morrison, CO); Cerni, Todd A. (Littleton, CO)

1989-01-01T23:59:59.000Z